Surface Plasmons in 3D Topological Insulators
NASA Astrophysics Data System (ADS)
Kogar, Anshul; Vig, Sean; Cho, Gil; Thaler, Alexander; Xiao, Yiran; Hughes, Taylor; Wong, Man-Hong; Chiang, Tai-Chang; MacDougall, Greg; Abbamonte, Peter
2015-03-01
Most studies of three-dimensional (3D) topological insulators have concentrated on their one-electron properties as exhibited by angle-resolved photoemission spectroscopy (ARPES) or by scanning tunneling microscopy (STM). Many-body interactions are often neglected in the treatment of models of topological insulators, such as in the Kane-Mele and Bernevig-Hughes-Zhang models. Using angle-resolved inelastic electron scattering from the surface, I will present data on the collective mode that owes its existence to the presence of many-body interactions, the surface plasmon (SP), in two known 3D topological insulators, Bi2Se3 and Bi0.5Sb1.5Se1 . 5 + xTe1 . 5 - x. Surprisingly, the SP was prominent even after depressing the Fermi energy into the bulk band gap. Having studied the SP as a function of doping, momentum transfer and its aging properties, I will present evidence to suggest that bulk-surface coupling is crucial in explaining many of its properties. A simple model with dynamic bulk screening will be presented showing qualitative agreement with the observations. Lastly, the relation of the observed surface plasmon to the predicted spin-plasmon mode and to the kinks seen in the electronic dispersion as measured by ARPES will be discussed. The work was supported as part of the Center for Emergent Superconductivity, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science.
NASA Astrophysics Data System (ADS)
Makhfudz, Imam
2016-04-01
Axion electrodynamics, first proposed in the context of particle physics, manifests itself in condensed matter physics in the topological field theory description of 3 d topological insulators and gives rise to magnetoelectric effect, where applying magnetic (electric) field B (E ) induces polarization (magnetization) p (m ) . We use linear response theory to study the associated topological current using the Fu-Kane-Mele model of 3 d topological insulators in the presence of time-dependent uniform weak magnetic field. By computing the dynamical current susceptibility χij jpjp(ω ) , we discover from its static limit an `order parameter' of the topological phase transition between weak topological (or ordinary) insulator and strong topological insulator, found to be continuous. The χij jpjp(ω ) shows a sign-changing singularity at a critical frequency with suppressed strength in the topological insulating state. Our results can be verified in current noise experiment on 3 d TI candidate materials for the detection of such topological phase transition.
Ripple modulated electronic structure of a 3D topological insulator
NASA Astrophysics Data System (ADS)
Madhavan, Vidya
2013-03-01
Many of the unusual properties of topological insulators can only be realized through a delicate tuning of the Dirac surface state rendering their detection thus far elusive. We have discovered that the surface state dispersion of a prototypical topological insulator can be continuously tuned via a novel topographical route. STM images of Bi2Te3 show one-dimensional (striped) ripples with 100nm periodicity. By combining information from Landau level spectra and Fourier transform of interference patterns we show that the ripples induce spatial modulations in the surface state dispersion. We describe how the ripples create topological channels for chiral spin modes at the boundaries such that placing the Fermi energy between the Landau levels of these periodic stripes would result in the first experimental realization of the ideal 1D dissipationless quantum wire. This ability to tune the surface state dispersion locally opens the door to a host of new phenomena in topological insulators.
Phase-sensitive SQUIDs based on the 3D topological insulator HgTe
NASA Astrophysics Data System (ADS)
Maier, L.; Bocquillon, E.; Grimm, M.; Oostinga, J. B.; Ames, C.; Gould, C.; Brüne, C.; Buhmann, H.; Molenkamp, L. W.
2015-12-01
Three-dimensional (3D) topological insulators represent a new class of materials in which transport is governed by Dirac surface states while the bulk remains insulating. Due to helical spin polarization of the surface states, the coupling of a 3D topological insulator to a nearby superconductor is expected to generate unconventional proximity induced p-wave superconductivity. We report here on the development and measurements of superconducting quantum interference devices on the surface of strained HgTe, a 3D topological insulator, as a potential tool to investigate this effect.
Emergent surface superconductivity in a 3D topological insulator
NASA Astrophysics Data System (ADS)
Krusin-Elbaum, Lia
Surfaces of three-dimensional topological insulators have emerged as one of the most remarkable states of condensed quantum matter where exotic charge and spin phases of Dirac particles could form. This work reports on novel mesoscopic superconductivity in the topological insulator Sb2Te3 with transition to zero resistance induced through a minor tuning of growth chemistry that depletes bulk conduction channels. The depletion shifts Fermi energy towards the Dirac point as witnessed by a factor of 300 reduction of bulk carrier density and by the largest carrier mobility (>25, 000 cm2V-1s-1) found in any topological material of this class. Direct evidence from transport, the unprecedentedly large diamagnetic screening, and the presence of ~ 25 meV gaps detected by scanning tunneling spectroscopy reveal the superconducting condensate to emerge first in surface puddles at unexpectedly high temperature of ~ 50 K, with the onset of global phase coherence at ~ 9 K. The unconventional spin response of Sb2Te3 and the presence of subsurface 2DEG quantum well states arising from charge transfer to the surface are likely to play a role in the emergent superconducting state. The rich structure of this state lends itself to manipulation via growth conditions and the material parameters such as Fermi velocity and mean free path. This work was supported by NSF DMR-1122594, DMR-1420634, DMR-1322483, and DOD-W911NF-13-1-0159.
Samarium Hexaboride: The First True 3D Topological Insulator?
NASA Astrophysics Data System (ADS)
Wolgast, Steven G.
The recent theoretical prediction of a topologically protected surface state in the mixed-valent insulator SmB6 has motivated a series of charge transport studies, which are presented here. It is first studied using a specialized configuration designed to distinguish bulk-dominated conduction from surface-dominated conduction. As the material is cooled below 4 K, it exhibits a crossover from thermally activated bulk transport to metallic surface conduction with a fully insulating bulk. The robustness and magnitude of the surface conductivity, as is manifest in the literature of SmB6, is strong evidence for the topological insulator (TI) metallic surface states predicted for this material. This resolves a decades-old puzzle surrounding the low-temperature behavior of SmB6. Next, the magnetotransport properties of the surface are investigated using a Corbino disk geometry, which can directly measure the conductivity of individual surfaces. Both (011) and (001) crystal surfaces show a strong negative magnetoresistance at all magnetic field angles, due primarily to changes in the carrier density. The low mobility value accounts for the failure so far to observe Shubnikov-de Haas oscillations below 95 T. Small variations in the mobility and temperature dependence suggest a suppression of Kondo scattering from native oxide-layer magnetic moments. At low fields, a dynamical field-sweep-rate-dependent hysteretic behavior is observed. It persists at the slowest sweep rates, and cannot be explained by quantum interference corrections; it is likely due to extrinsic effects such as the magnetocaloric effect or glassy ordering of the native oxide moments. Pulsed magnetic field measurements up to 60 T at temperatures throughout the crossover regime clearly distinguish the surface magnetoresistance from the bulk magnetoresistance. The bulk magnetoresistance is due to a reduction in the bulk gap with increasing magnetic field. Finally, small subsurface cracks formed in SmB6 via
Probing Quantum Capacitance in a 3D Topological Insulator
NASA Astrophysics Data System (ADS)
Kozlov, D. A.; Bauer, D.; Ziegler, J.; Fischer, R.; Savchenko, M. L.; Kvon, Z. D.; Mikhailov, N. N.; Dvoretsky, S. A.; Weiss, D.
2016-04-01
We measure the quantum capacitance and probe thus directly the electronic density of states of the high mobility, Dirac type two-dimensional electron system, which forms on the surface of strained HgTe. Here we show that observed magnetocapacitance oscillations probe—in contrast to magnetotransport—primarily the top surface. Capacitance measurements constitute thus a powerful tool to probe only one topological surface and to reconstruct its Landau level spectrum for different positions of the Fermi energy.
Dephasing effect on backscattering of helical surface states in 3D topological insulators.
Liu, Haiwen; Jiang, Hua; Sun, Qing-Feng; Xie, X C
2014-07-25
We analyze the dephasing effect on the backscattering behavior of the helical surface states in 3D topological insulators. We show that the combination of dephasing and impurity scattering can cause backscattering in the helical states. Especially for the charge impurity case, the backscattering cross section becomes extremely large around the Dirac point. This large backscattering behavior can lead to the anomalous "gaplike" features found in recent experiments [T. Sato et al., Nat. Phys. 7, 840 (2011)].
Contact Effects in thin 3D-Topological Insulators: How does the current flow?
Gupta, Gaurav; Jalil, Mansoor Bin Abdul; Liang, Gengchiau
2015-01-01
The effect of different contact configurations (semi-infinite extended-channel, normal metal and ferromagnetic metal) on quantum transport through thin Bi2Se3 three-dimensional (3D) topological insulator (TI) slab (channel) has been investigated through Non-Equilibrium Green Function. The issue of contact dependent current flow and distribution across quintuple layers of 3D-TI has been addressed in this work and applied to expound the explanation for recent experimental work on electrical detection of spin-momentum locking on topological surface for long channel device. A theoretical model is propounded to develop a microscopic understanding of transport in 3D-TI in which contact type and magnetization concur with helical surface states of the TI channel to manifest seemingly counter-intuitive current distribution across layers. The quantum transport calculations for short channel devices with magnetic source and drain contacts postulate negative surface current for anti-phase magnetization whose axis is transverse to both current and quintuple layers. For in-phase magnetization at the two terminals, it is shown that observations can change fundamentally to result in anomalous current distribution. Such results are explained to stem from the confinement of 3D-TI between ferromagnetic contacts along the transport direction. A simple mechanism to validate topological insulators via quantum transport experiments has also been suggested. PMID:25820460
Surface states in a 3D topological insulator: The role of hexagonal warping and curvature
Repin, E. V.; Burmistrov, I. S.
2015-09-15
We explore a combined effect of hexagonal warping and a finite effective mass on both the tunneling density of electronic surface states and the structure of Landau levels of 3D topological insulators. We find the increasing warping to transform the square-root van Hove singularity into a logarithmic one. For moderate warping, an additional logarithmic singularity and a jump in the tunneling density of surface states appear. By combining the perturbation theory and the WKB approximation, we calculate the Landau levels in the presence of hexagonal warping. We predict that due to the degeneracy removal, the evolution of Landau levels in the magnetic field is drastically modified.
Strong interband Faraday rotation in 3D topological insulator Bi2Se3
NASA Astrophysics Data System (ADS)
Ohnoutek, L.; Hakl, M.; Veis, M.; Piot, B. A.; Faugeras, C.; Martinez, G.; Yakushev, M. V.; Martin, R. W.; Drašar, Č.; Materna, A.; Strzelecka, G.; Hruban, A.; Potemski, M.; Orlita, M.
2016-01-01
The Faraday effect is a representative magneto-optical phenomenon, resulting from the transfer of angular momentum between interacting light and matter in which time-reversal symmetry has been broken by an externally applied magnetic field. Here we report on the Faraday rotation induced in the prominent 3D topological insulator Bi2Se3 due to bulk interband excitations. The origin of this non-resonant effect, extraordinarily strong among other non-magnetic materials, is traced back to the specific Dirac-type Hamiltonian for Bi2Se3, which implies that electrons and holes in this material closely resemble relativistic particles with a non-zero rest mass.
Interfacing 2D and 3D Topological Insulators: Bi(111) Bilayer on Bi2Te3
NASA Astrophysics Data System (ADS)
Hirahara, Toru; Bihlmayer, Gustav; Sakamoto, Yusuke; Yamada, Manabu; Miyazaki, Hidetoshi; Kimura, Shin-Ichi; Blügel, Stefan; Hasegawa, Shuji
2012-02-01
Topological insulators (TI) are insulating materials but have metallic edge states that carry spin currents and are robust against nonmagnetic impurities [1]. While there have been a large number of reports on three-dimensional (3D) TI, only few works have been done in terms of two-dimensional (2D) TI. In the present paper, we report the successful formation of bilayer Bi, which was theoretically predicted to be a 2D TI [2]. We deposited bilayer Bi on a 3D TI Bi2Te3, which the lattice mismatch is very small. From angle-resolved photoemission spectroscopy measurements and ab initio calculations, the electronic structure of the system can be understood as an overlap of the band dispersions of bilayer Bi and Bi2Te3. Our results show that the Dirac cone is actually robust against nonmagnetic perturbations and imply a unique situation where the topologically protected one- and two-dimensional edge states are coexisting at the surface [3]. [0pt] [1] M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045 (2010).[0pt] [2] S. Murakami, Phys. Rev. Lett. 97, 236805 (2006).[0pt] [3] T. Hirahara et al., Phys. Rev. Lett. 107, 166801 (2011).
Faraday effect due to Pauli exclusion principle in 3D topological insulator nanostructures
NASA Astrophysics Data System (ADS)
Paudel, Hari P.; Leuenberger, Michael N.
2014-05-01
3D topological insulator (3D TI) materials have interesting surface states that are protected against scattering due to non-magnetic impurities. They turn out to be useful in quantum information processing. Here, using the 3D Dirac equation, we show that the transitions between positive and negative energy solutions in a 3D TI heterostructure junction and in a 3D TI quantum dot (QD) obey strict optical selection rules. We calculate the optical conductivity tensor of a 3D TI double interface made of a PbTe/Pb0:31Sn0:69Te/PbTe heterostructure using Maxwell's equations, which reveals a giant Faraday rotation effect due to Pauli exclusion principle. A transfer matrix method is employed to calculate the transmittance in a multilayer stacking of PbTe/Pb0:31Sn0:69Te/PbTe heterostructure. We show that while the Faraday rotation is giant for a single double interface, it takes about 60 double interfaces to absorb incoming radiation completely. We also present the model of a QD consisting of a spherical core-bulk heterostructure made of 3D TI materials, such as PbTe/Pb0:31Sn0:69Te/PbTe , with bound massless and helical Weyl states existing at the interface and being confined in all three dimensions. We calculate the Faraday rotation effect coming from the polarization of single electron-hole pairs. We show that the semi-classical Faraday effect can be used to read out spin quantum memory.
Giant Faraday effect due to Pauli exclusion principle in 3D topological insulators.
Paudel, Hari P; Leuenberger, Michael N
2014-02-26
Experiments using ARPES, which is based on the photoelectric effect, show that the surface states in 3D topological insulators (TI) are helical. Here we consider Weyl interface fermions due to band inversion in narrow-bandgap semiconductors, such as Pb1-xSnxTe. The positive and negative energy solutions can be identified by means of opposite helicity in terms of the spin helicity operator in 3D TI as ĥ(TI) = (1/ |p|_ |) β (σ|_ x p|_ ) · z^, where β is a Dirac matrix and z^ points perpendicular to the interface. Using the 3D Dirac equation and bandstructure calculations we show that the transitions between positive and negative energy solutions, giving rise to electron-hole pairs, obey strict optical selection rules. In order to demonstrate the consequences of these selection rules, we consider the Faraday effect due to the Pauli exclusion principle in a pump-probe setup using a 3D TI double interface of a PbTe/Pb₀.₃₁Sn₀.₆₉Te/PbTe heterostructure. For that we calculate the optical conductivity tensor of this heterostructure, which we use to solve Maxwell's equations. The Faraday rotation angle exhibits oscillations as a function of probe wavelength and thickness of the heterostructure. The maxima in the Faraday rotation angle are of the order of mrds.
NASA Astrophysics Data System (ADS)
Oh, Seongshik
Topological insulator (TI) is one of the rare systems in the history of condensed matter physics that is initiated by theories and followed by experiments. Although this theory-driven advance helped move the field quite fast despite its short history, apparently there exist significant gaps between theories and experiments. Many of these discrepancies originate from the very fact that the worlds readily accessible to theories are often far from the real worlds that are available in experiments. For example, the very paradigm of topological protection of the surface states on Z2 TIs such as Bi2Se3, Bi2Te3, Sb2Te3, etc, is in fact valid only if the sample size is infinite and the crystal momentum is well-defined in all three dimensions. On the other hand, many widely studied forms of TIs such as thin films and nano-wires have significant confinement in one or more of the dimensions with varying level of disorders. In other words, many of the real world topological systems have some important parameters that are not readily captured by theories, and thus it is often questionable how far the topological theories are valid to real systems. Interestingly, it turns out that this very uncertainty of the theories provides additional control knobs that allow us to explore hidden topological territories. In this talk, I will discuss how these additional knobs in thin film topological insulators reveal surprising, at times beautiful, landscapes at the boundaries between order and disorder, 2D and 3D, normal and topological phases. This work is supported by Gordon and Betty Moore Foundation's EPiQS Initiative (GBMF4418).
Strong interband Faraday rotation in 3D topological insulator Bi2Se3
Ohnoutek, L.; Hakl, M.; Veis, M.; Piot, B. A.; Faugeras, C.; Martinez, G.; Yakushev, M. V.; Martin, R. W.; Drašar, Č.; Materna, A.; Strzelecka, G.; Hruban, A.; Potemski, M.; Orlita, M.
2016-01-01
The Faraday effect is a representative magneto-optical phenomenon, resulting from the transfer of angular momentum between interacting light and matter in which time-reversal symmetry has been broken by an externally applied magnetic field. Here we report on the Faraday rotation induced in the prominent 3D topological insulator Bi2Se3 due to bulk interband excitations. The origin of this non-resonant effect, extraordinarily strong among other non-magnetic materials, is traced back to the specific Dirac-type Hamiltonian for Bi2Se3, which implies that electrons and holes in this material closely resemble relativistic particles with a non-zero rest mass. PMID:26750455
Strong interband Faraday rotation in 3D topological insulator Bi2Se3.
Ohnoutek, L; Hakl, M; Veis, M; Piot, B A; Faugeras, C; Martinez, G; Yakushev, M V; Martin, R W; Drašar, Č; Materna, A; Strzelecka, G; Hruban, A; Potemski, M; Orlita, M
2016-01-01
The Faraday effect is a representative magneto-optical phenomenon, resulting from the transfer of angular momentum between interacting light and matter in which time-reversal symmetry has been broken by an externally applied magnetic field. Here we report on the Faraday rotation induced in the prominent 3D topological insulator Bi2Se3 due to bulk interband excitations. The origin of this non-resonant effect, extraordinarily strong among other non-magnetic materials, is traced back to the specific Dirac-type Hamiltonian for Bi2Se3, which implies that electrons and holes in this material closely resemble relativistic particles with a non-zero rest mass. PMID:26750455
Skyrmion-induced bound states on the surface of 3D Topological Insulators
NASA Astrophysics Data System (ADS)
Andrikopoulos, Dimitrios; Soree, Bart
In this work, we study the interaction between the surface state of a 3D Topological Insulator and a skyrmion magnetic texture. The skyrmion texture couples to the spin of the surface state electron with strength ΔS. Vortex and hedgehog skyrmion and anti-skyrmion structures are considered and their interaction is compared. Due to the vortex structure, the interaction of the in-plane components can be neglected and a step function is used to describe the skyrmion magnetization profile. In the hedgehog case, it is shown that the in-plane components cannot be disregarded and thus a realistic description for the skyrmion is required. Working in the micromagnetic framework, we derive a macrospin description for the skyrmion using the variational principle and then numerically solve for the bound states. It is shown that the existense and properties of these states as a function of skyrmion size, strongly depend on the skyrmion type. Both vortex and hedgehog skyrmions or anti-skyrmions can induce bound states with energies | E | < ΔS . For the hedgehog skyrmion case however, bound state appearance depends on the chirality. Finally, the probability densities in these states are computed and it is demonstrated that the electrons are localized throughout the skyrmion region. Also affiliated with imec, Belgium.
RKKY interaction in P-N junction based on surface states of 3D topological insulator
NASA Astrophysics Data System (ADS)
Zhang, Shuhui; Yang, Wen; Chang, Kai
The RKKY interaction mediated by conduction electrons supplies a mechanism to realize the long-range coupling of localized spins which is desired for the spin devices. Here, we examine the controllability of RKKY interaction in P-N junction (PNJ) based on surface states of 3D topological insulator (3DTI). In this study, through quantum way but not usual classical analogy to light propagation, the intuitive picture for electron waves across the interface of PNJ is obtained, e.g., Klein tunneling, negative refraction and focusing. Moreover, we perform the numerical calculations for all kinds of RKKY interaction including the Heisenberg, Ising, and Dzyaloshinskii-Moriya terms. We find the focusing of surface states leads to the local augmentation of RKKY interaction. Most importantly, a dimension transition occurs, i.e., the decay rate of RKKY interaction from the deserved 1/R 2 to 1/ R . In addition, the quadratic gate-dependence of RKKY interaction is also beneficial to the application of 3DTI PNJ in the fields of spintronics and quantum computation. This work was supported by the MOST (Grant No. 2015CB921503, and No. 2014CB848700) and NSFC (Grant No. 11434010, No. 11274036, No. 11322542, and No. 11504018).
Chromatin Insulators and Topological Domains: Adding New Dimensions to 3D Genome Architecture.
Matharu, Navneet K; Ahanger, Sajad H
2015-09-01
The spatial organization of metazoan genomes has a direct influence on fundamental nuclear processes that include transcription, replication, and DNA repair. It is imperative to understand the mechanisms that shape the 3D organization of the eukaryotic genomes. Chromatin insulators have emerged as one of the central components of the genome organization tool-kit across species. Recent advancements in chromatin conformation capture technologies have provided important insights into the architectural role of insulators in genomic structuring. Insulators are involved in 3D genome organization at multiple spatial scales and are important for dynamic reorganization of chromatin structure during reprogramming and differentiation. In this review, we will discuss the classical view and our renewed understanding of insulators as global genome organizers. We will also discuss the plasticity of chromatin structure and its re-organization during pluripotency and differentiation and in situations of cellular stress.
Chromatin Insulators and Topological Domains: Adding New Dimensions to 3D Genome Architecture
Matharu, Navneet K.; Ahanger, Sajad H.
2015-01-01
The spatial organization of metazoan genomes has a direct influence on fundamental nuclear processes that include transcription, replication, and DNA repair. It is imperative to understand the mechanisms that shape the 3D organization of the eukaryotic genomes. Chromatin insulators have emerged as one of the central components of the genome organization tool-kit across species. Recent advancements in chromatin conformation capture technologies have provided important insights into the architectural role of insulators in genomic structuring. Insulators are involved in 3D genome organization at multiple spatial scales and are important for dynamic reorganization of chromatin structure during reprogramming and differentiation. In this review, we will discuss the classical view and our renewed understanding of insulators as global genome organizers. We will also discuss the plasticity of chromatin structure and its re-organization during pluripotency and differentiation and in situations of cellular stress. PMID:26340639
Ripple-modulated electronic structure of a 3D topological insulator.
Okada, Yoshinori; Zhou, Wenwen; Walkup, D; Dhital, Chetan; Wilson, Stephen D; Madhavan, V
2012-01-01
Three-dimensional topological insulators host linearly dispersing states with unique properties and a strong potential for applications. An important ingredient in realizing some of the more exotic states in topological insulators is the ability to manipulate local electronic properties. Direct analogy to the Dirac material graphene suggests that a possible avenue for controlling local properties is via a controlled structural deformation such as the formation of ripples. However, the influence of such ripples on topological insulators is yet to be explored. Here we use scanning tunnelling microscopy to determine the effects of one-dimensional buckling on the electronic properties of Bi(2)Te(3.) By tracking spatial variations of the interference patterns generated by the Dirac electrons we show that buckling imposes a periodic potential, which locally modulates the surface-state dispersion. This suggests that forming one- and two-dimensional ripples is a viable method for creating nanoscale potential landscapes that can be used to control the properties of Dirac electrons in topological insulators.
NASA Astrophysics Data System (ADS)
Sochnikov, Ilya; Maier, Luis; Watson, Christopher A.; Kirtley, John R.; Gould, Charles; Tkachov, Grigory; Hankiewicz, Ewelina M.; Brüne, Christoph; Buhmann, Hartmut; Molenkamp, Laurens W.; Moler, Kathryn A.
2015-02-01
We use superconducting quantum interference device microscopy to characterize the current-phase relation (CPR) of Josephson junctions from the three-dimensional topological insulator HgTe (3D HgTe). We find clear skewness in the CPRs of HgTe junctions ranging in length from 200 to 600 nm. The skewness indicates that the Josephson current is predominantly carried by Andreev bound states with high transmittance, and the fact that the skewness persists in junctions that are longer than the mean free path suggests that the effect may be related to the helical nature of the Andreev bound states in the surface of HgTe. These experimental results suggest that the topological properties of the normal state can be inherited by the induced superconducting state, and that 3D HgTe is a promising material for realizing the many exciting proposals that require a topological superconductor.
Dynamical electron compressibility in the 3D topological insulator Bi2Se3
NASA Astrophysics Data System (ADS)
Inhofer, Andreas; Assaf, Badih; Wilmart, Quentin; Veyrat, Louis; Nowka, Christian; Dufouleur, Joseph; Giraud, Romain; Hampel, Silke; Buechner, Bernd; Fève, Gwendal; Berroir, Jean-Marc; Placais, Bernard
Measurements of the quantum capacitance cq, related to the electron compressibility χ =cq /e2 is a sensitive tool to probe the density of states. In a topological insulator (TI) the situation is enriched by the coexistence and the interplay of topologically protected surface states and massive bulk carriers. We investigate top-gate metal-oxyde-TI capacitors using Bi2Se3 thin crystals at GHz frequencies. These measurements provide insight into the compressibillity of such a two electron-fluid system. Furthermore, the dynamical response yields information about electron scattering properties in TIs. More specifically, in our measurements we track simultaneously the conductivity σ and the compressibility as a function of a DC-gate voltage. Using the Einstein relation σ =cq D , we have access to the gate dependence of the electron diffusion constant D (Vg) , a signature of the peculiar scattering mechanisms in TIs.
Effects of Surface Morphology on the 3D Topological Insulator Samarium Hexaboride
NASA Astrophysics Data System (ADS)
Wolgast, Steven; Eo, Yun Suk; Kurdak, Cagliyan; Kim, Dae-Jeong; Fisk, Zachary
2015-03-01
The recent verification of a topologically-protected surface state in SmB6 at low temperatures has led to several transport studies of the surface states. This task is complicated because current can flow on all surfaces of a topological insulator, each of which can have different transport characteristics. Our own measurements using a Corbino disc geometry overcome this difficulty, limiting the conduction to individual surfaces. However, the sheet conductivities of our samples counter-intuitively decrease with finer surface polishing. We therefore investigate surface and sub-surface morphology as a factor affecting the surface conductivity. Specifically, surface cracks may themselves harbor surface states and contribute to the total electrical conduction, yielding a higher measured sheet conductivity than that of a flat surface. This situation may contribute to the (sometimes unphysically) large surface conductivities already observed in SmB6. Performed in part at the Lurie Nanofabrication Facility and the Electron Microbeam Analysis Laboratory. Funded by NSF Grant #DMR-1006500 and DMR-1441965. Thanks to Gang Li and Fan Yu for optical imaging.
Sensing Coulomb impurities with 1/f noise in 3D Topological Insulator
NASA Astrophysics Data System (ADS)
Bhattacharyya, Semonti; Banerjee, Mitali; Nhalil, Hariharan; Elizabeth, Suja; Ghosh, Arindam
2015-03-01
Electrical transport in the non-trivial surface states of bulk Topological Insulator (TI) reveal several intriguing properties ranging from bipolar field effect transistor action, weak antilocalization in quantum transport, to the recently discovered quantum anomalous Hall effect. Many of these phenomena depend crucially on the nature of disorder and its screening by the Dirac Fermions at the TI surface. We have carried out a systematic study of low-frequency 1/f noise in Bi1.6Sb0.4Te2Se1 single crystals, to explore the dominant source of scattering of surface electrons and monitor relative contributions of the surface and bulk channels. Our results reveal that while trapped coulomb impurities at the substrate-TI interface are dominating source of scattering for thin (10 nm) TI, charged crystal disorder contribute strongly in thick TI (110 nm) channels. An unexpected maximum at 25K in noise from thick TI devices indicate scattering of the surface states by a cooperative charge dynamics in the bulk of the TI, possibly associated with the Selenium vacancies. Our experiment demonstrates, for the first time, impact of the bulk charge distribution on the surface state transport in TIs that could be crucial to the implementation of these materials in electronic applications.
NASA Astrophysics Data System (ADS)
Wang, Na; Wang, JianFeng; Si, Chen; Gu, Bing-Lin; Duan, WenHui
2016-08-01
The introduction of magnetism in SnTe-class topological crystalline insulators is a challenging subject with great importance in the quantum device applications. Based on the first-principles calculations, we have studied the defect energetics and magnetic properties of 3 d transition-metal (TM)-doped SnTe. We find that the doped TM atoms prefer to stay in the neutral states and have comparatively high formation energies, suggesting that the uniform TMdoping in SnTe with a higher concentration will be difficult unless clustering. In the dilute doping regime, all the magnetic TMatoms are in the high-spin states, indicating that the spin splitting energy of 3 d TM is stronger than the crystal splitting energy of the SnTe ligand. Importantly, Mn-doped SnTe has relatively low defect formation energy, largest local magnetic moment, and no defect levels in the bulk gap, suggesting that Mn is a promising magnetic dopant to realize the magnetic order for the theoretically-proposed large-Chern-number quantum anomalous Hall effect (QAHE) in SnTe.
NASA Astrophysics Data System (ADS)
Sengupta, Parijat; Bellotti, Enrico
2015-08-01
Topological insulators (TI) are a new class of materials that have an energy gap in bulk but possess gapless states bound to the sample surface or edge that have been theoretically predicted and experimentally observed [1]. The topological state in Bi2Te3 is characterized by a linear dispersion and a Dirac cone at the Γpoint. The optical absorption on the surface of a TI is given by the standard graphene-like απ/2 when a linear dispersion is assumed. Realistically, at k-points away from Γ, higher order cubic terms in k that represent the underlying hexagonal symmetry [2] of the crystal dominate and give rise to warping of bands. The optical absorption of a ferromagnetic coated gapped 3D TI film with warping terms considered is longer απ/2 but significantly modified. We demonstrate, by using wave functions from a continuum-Hamiltonian and Fermi-golden rule, the absorption spectrum on the surface of a TI as a function of the chemical potential, film-thickness and incident photon energy. A linear response theory based calculation is also performed using the Kubo formula to determine the longitudinal optical conductivity whose real part gives absorption as a function of photon frequency. The absorption in materials with Dirac fermions which is significantly higher than in normal THz detectors [3] can be further modulated in a TI by explicitly including the warping term making them highly efficient and tunable photodetectors. [1] M.Hasan and C.Kane, Rev.Mod.Phys. 82, 3045(2010) [2] L.Fu, Phys.Rev.Lett.103, 266801(2009) [3] X.Zhang et al., Phys. Rev B, 82, 245107(2010)
Pressure evolution of electrical transport in the 3D topological insulator (Bi,Sb)2(Te,Se)3
NASA Astrophysics Data System (ADS)
Jeffries, Jason; Butch, N. P.; Vohra, Y. K.; Weir, S. T.
2014-03-01
The group V-VI compounds--like Bi2Se3, Sb2Te3, or Bi2Te3--have been widely studied in recent years for their bulk topological properties. The high-Z members of this series form with the same crystal structure, and are therefore amenable to isostructural substitution studies. It is possible to tune the Bi-Sb and Te-Se ratios such that the material exhibits insulating behavior, thus providing an excellent platform for understanding how a topological insulator evolves with applied pressure. We report our observations of the pressure-dependent electrical transport and compare that behavior with other binary V-VI compounds under pressure. Lawrence Livermore National Laboratory is operated by Lawrence Livermore National Security, LLC, for the U.S. Department of Energy, National Nuclear Security Administration under Contract DE-AC52-07NA27344.
Topological crystalline insulators.
Fu, Liang
2011-03-11
The recent discovery of topological insulators has revived interest in the band topology of insulators. In this Letter, we extend the topological classification of band structures to include certain crystal point group symmetry. We find a class of three-dimensional "topological crystalline insulators" which have metallic surface states with quadratic band degeneracy on high symmetry crystal surfaces. These topological crystalline insulators are the counterpart of topological insulators in materials without spin-orbit coupling. Their band structures are characterized by new topological invariants. We hope this work will enlarge the family of topological phases in band insulators and stimulate the search for them in real materials.
Pressure evolution of electrical transport in the 3D topological insulator (Bi,Sb)2(Se,Te)3
NASA Astrophysics Data System (ADS)
Jeffries, J. R.; Butch, N. P.; Vohra, Y. K.; Weir, S. T.
2015-03-01
The group V-VI compounds—like Bi2Se3, Sb2Te3, or Bi2Te3—have been widely studied in recent years for their bulk topological properties. The high-Z members of this series form with the same crystal structure, and are therefore amenable to isostructural substitution studies. It is possible to tune the Bi-Sb and Te-Se ratios such that the material exhibits insulating behavior, thus providing an excellent platform for understanding how a topological insulator evolves with applied pressure. We report our observations of the pressure-dependent electrical transport and crystal structure of a pseudobinary (Bi,Sb)2(Te,Se)3 compound. Similar to some of its sister compounds, the (Bi,Sb)2(Te,Se)3 pseudobinary compound undergoes multiple, pressure-induced phase transformations that result in metallization, the onset of a close-packed crystal structure, and the development of distinct superconducting phases.
Topological insulators and superconductors
NASA Astrophysics Data System (ADS)
Teo, Jeffrey C. Y.
We study theoretical properties of robust low energy electronic excitations associated with topological insulators and superconductors. The bulk materials are described by non-interacting single particle band Hamiltonians with a finite excitation gap. Their topological phases are classifed according to symmetries and dimensions, characterized by discrete bulk invariants, and correspond to topologically protected gapless excitations bounded to boundaries, interfaces or other kinds of defects. In particular, we study the metallic surface states of the three dimensional topological insulator Bi1-- xSbx, critical edge transport behavior of quantum spin Hall insulators (QSHI) using point contact geometry, Majorana bound states in three dimensions and their resemblance to Ising statistics, and various gapless modes accompanying topological defects in insulators and superconductors. We illustrate the topological phase of Bi1-- xSbx by calculating its surface energy spectrum numerically from a previously proposed tight binding model. An odd number of surface Dirac cones occupy the surface Brillouin zone and exhibit the strong topological nature of the material. We investigate the critical conductance behavior of a point contact in QSHI using a spinful Luttinger liquid description along the edges. For weak interactions, a novel intermediate fixed point controls the pinch-off transition, and the universal crossover scaling function of conductance is extracted from the solvable limits for the Luttinger parameter g = 1 -- epsilon, g = 1/2 + epsilon, and g = 1/ 3 . Majorana fermions are studied as zero energy quasiparticle excitations associated with pointlike topological defects in 3D superconductors. The low energy modes are described phenomenologically in a Dirac-type Bogoliubov de Gennes (BdG) framework, and the Majorana bound states are shown to exhibit Ising non-Abelian statistics despite living in (3 + 1) dimensions. In particular, novel braidless operations are shown to
NASA Astrophysics Data System (ADS)
Eremeev, S. V.; Men`shov, V. N.; Tugushev, V. V.; Chulkov, E. V.
2015-06-01
By means of relativistic density functional theory (DFT) calculations we study electron band structure of the topological insulator (TI) Bi2Se3 thin films deposited on the ferromagnetic insulator (FMI) EuS substrate. In the Bi2Se3/EuS heterostructure, the gap opened in the spectrum of the topological state has a hybridization character and is shown to be controlled by the Bi2Se3 film thickness, while magnetic contribution to the gap is negligibly small. We also analyzed the effect of Eu doping on the magnetization of the Bi2Se3 film and demonstrated that the Eu impurity induces magnetic moments on neighboring Se and Bi atoms an order of magnitude larger than the substrate-induced moments. Recent magnetic and magneto-transport measurements in EuS/Bi2Se3 heterostructure are discussed.
NASA Astrophysics Data System (ADS)
Lei, Tao; Jin, Kyung-Hwan; Zhang, Nian; Zhao, Jia-Li; Liu, Chen; Li, Wen-Jie; Wang, Jia-Ou; Wu, Rui; Qian, Hai-Jie; Liu, Feng; Ibrahim, Kurash
2016-06-01
The electronic state evolution of single bilayer (1BL) Bi(1 1 1) deposited on three-dimensional (3D) Bi2Se x Te3-x topological insulators at x = 0, 1.26, 2, 2.46, 3 is systematically investigated by angle-resolved photoemission spectroscopy (ARPES). Our results indicate that the electronic structures of epitaxial Bi films are strongly influenced by the substrate especially the topmost sublayer near the Bi films, manifesting in two main aspects. First, the Se atoms cause a stronger charge transfer effect, which induces a giant Rashba-spin splitting, while the low electronegativity of Te atoms induces a strong hybridization at the interface. Second, the lattice strain notably modifies the band dispersion of the surface bands. Furthermore, our experimental results are elucidated by first-principles band structure calculations.
Cubic topological Kondo insulators.
Alexandrov, Victor; Dzero, Maxim; Coleman, Piers
2013-11-27
Current theories of Kondo insulators employ the interaction of conduction electrons with localized Kramers doublets originating from a tetragonal crystalline environment, yet all Kondo insulators are cubic. Here we develop a theory of cubic topological Kondo insulators involving the interaction of Γ(8) spin quartets with a conduction sea. The spin quartets greatly increase the potential for strong topological insulators, entirely eliminating the weak topological phases from the diagram. We show that the relevant topological behavior in cubic Kondo insulators can only reside at the lower symmetry X or M points in the Brillouin zone, leading to three Dirac cones with heavy quasiparticles.
Topological crystalline insulator nanostructures.
Shen, Jie; Cha, Judy J
2014-11-01
Topological crystalline insulators are topological insulators whose surface states are protected by the crystalline symmetry, instead of the time reversal symmetry. Similar to the first generation of three-dimensional topological insulators such as Bi₂Se₃ and Bi₂Te₃, topological crystalline insulators also possess surface states with exotic electronic properties such as spin-momentum locking and Dirac dispersion. Experimentally verified topological crystalline insulators to date are SnTe, Pb₁-xSnxSe, and Pb₁-xSnxTe. Because topological protection comes from the crystal symmetry, magnetic impurities or in-plane magnetic fields are not expected to open a gap in the surface states in topological crystalline insulators. Additionally, because they have a cubic structure instead of a layered structure, branched structures or strong coupling with other materials for large proximity effects are possible, which are difficult with layered Bi₂Se₃ and Bi₂Te₃. Thus, additional fundamental phenomena inaccessible in three-dimensional topological insulators can be pursued. In this review, topological crystalline insulator SnTe nanostructures will be discussed. For comparison, experimental results based on SnTe thin films will be covered. Surface state properties of topological crystalline insulators will be discussed briefly.
Photonic Floquet topological insulators.
Rechtsman, Mikael C; Zeuner, Julia M; Plotnik, Yonatan; Lumer, Yaakov; Podolsky, Daniel; Dreisow, Felix; Nolte, Stefan; Segev, Mordechai; Szameit, Alexander
2013-04-11
Topological insulators are a new phase of matter, with the striking property that conduction of electrons occurs only on their surfaces. In two dimensions, electrons on the surface of a topological insulator are not scattered despite defects and disorder, providing robustness akin to that of superconductors. Topological insulators are predicted to have wide-ranging applications in fault-tolerant quantum computing and spintronics. Substantial effort has been directed towards realizing topological insulators for electromagnetic waves. One-dimensional systems with topological edge states have been demonstrated, but these states are zero-dimensional and therefore exhibit no transport properties. Topological protection of microwaves has been observed using a mechanism similar to the quantum Hall effect, by placing a gyromagnetic photonic crystal in an external magnetic field. But because magnetic effects are very weak at optical frequencies, realizing photonic topological insulators with scatter-free edge states requires a fundamentally different mechanism-one that is free of magnetic fields. A number of proposals for photonic topological transport have been put forward recently. One suggested temporal modulation of a photonic crystal, thus breaking time-reversal symmetry and inducing one-way edge states. This is in the spirit of the proposed Floquet topological insulators, in which temporal variations in solid-state systems induce topological edge states. Here we propose and experimentally demonstrate a photonic topological insulator free of external fields and with scatter-free edge transport-a photonic lattice exhibiting topologically protected transport of visible light on the lattice edges. Our system is composed of an array of evanescently coupled helical waveguides arranged in a graphene-like honeycomb lattice. Paraxial diffraction of light is described by a Schrödinger equation where the propagation coordinate (z) acts as 'time'. Thus the helicity of the
Photonic Floquet topological insulators.
Rechtsman, Mikael C; Zeuner, Julia M; Plotnik, Yonatan; Lumer, Yaakov; Podolsky, Daniel; Dreisow, Felix; Nolte, Stefan; Segev, Mordechai; Szameit, Alexander
2013-04-11
Topological insulators are a new phase of matter, with the striking property that conduction of electrons occurs only on their surfaces. In two dimensions, electrons on the surface of a topological insulator are not scattered despite defects and disorder, providing robustness akin to that of superconductors. Topological insulators are predicted to have wide-ranging applications in fault-tolerant quantum computing and spintronics. Substantial effort has been directed towards realizing topological insulators for electromagnetic waves. One-dimensional systems with topological edge states have been demonstrated, but these states are zero-dimensional and therefore exhibit no transport properties. Topological protection of microwaves has been observed using a mechanism similar to the quantum Hall effect, by placing a gyromagnetic photonic crystal in an external magnetic field. But because magnetic effects are very weak at optical frequencies, realizing photonic topological insulators with scatter-free edge states requires a fundamentally different mechanism-one that is free of magnetic fields. A number of proposals for photonic topological transport have been put forward recently. One suggested temporal modulation of a photonic crystal, thus breaking time-reversal symmetry and inducing one-way edge states. This is in the spirit of the proposed Floquet topological insulators, in which temporal variations in solid-state systems induce topological edge states. Here we propose and experimentally demonstrate a photonic topological insulator free of external fields and with scatter-free edge transport-a photonic lattice exhibiting topologically protected transport of visible light on the lattice edges. Our system is composed of an array of evanescently coupled helical waveguides arranged in a graphene-like honeycomb lattice. Paraxial diffraction of light is described by a Schrödinger equation where the propagation coordinate (z) acts as 'time'. Thus the helicity of the
NASA Astrophysics Data System (ADS)
Dzero, Maxim; Xia, Jing; Galitski, Victor; Coleman, Piers
2016-03-01
This article reviews recent theoretical and experimental work on a new class of topological material -- topological Kondo insulators, which develop through the interplay of strong correlations and spin-orbit interactions. The history of Kondo insulators is reviewed along with the theoretical models used to describe these heavy fermion compounds. The Fu-Kane method of topological classification of insulators is used to show that hybridization between the conduction electrons and localized f electrons in these systems gives rise to interaction-induced topological insulating behavior. Finally, some recent experimental results are discussed, which appear to confirm the theoretical prediction of the topological insulating behavior in samarium hexaboride, where the long-standing puzzle of the residual low-temperature conductivity has been shown to originate from robust surface states.
Photonic topological insulators.
Khanikaev, Alexander B; Mousavi, S Hossein; Tse, Wang-Kong; Kargarian, Mehdi; MacDonald, Allan H; Shvets, Gennady
2013-03-01
Recent progress in understanding the topological properties of condensed matter has led to the discovery of time-reversal-invariant topological insulators. A remarkable and useful property of these materials is that they support unidirectional spin-polarized propagation at their surfaces. Unfortunately topological insulators are rare among solid-state materials. Using suitably designed electromagnetic media (metamaterials) we theoretically demonstrate a photonic analogue of a topological insulator. We show that metacrystals-superlattices of metamaterials with judiciously designed properties-provide a platform for designing topologically non-trivial photonic states, similar to those that have been identified for condensed-matter topological insulators. The interfaces of the metacrystals support helical edge states that exhibit spin-polarized one-way propagation of photons, robust against disorder. Our results demonstrate the possibility of attaining one-way photon transport without application of external magnetic fields or breaking of time-reversal symmetry. Such spin-polarized one-way transport enables exotic spin-cloaked photon sources that do not obscure each other.
Topological order parameters for interacting topological insulators.
Wang, Zhong; Qi, Xiao-Liang; Zhang, Shou-Cheng
2010-12-17
We propose a topological order parameter for interacting topological insulators, expressed in terms of the full Green's functions of the interacting system. We show that it is exactly quantized for a time-reversal invariant topological insulator, and it can be experimentally measured through the topological magneto-electric effect. This topological order parameter can be applied to both interacting and disordered systems, and used for determining their phase diagrams. PMID:21231609
Experimental Studies of Ferromagnetism in Topological Insulators
NASA Astrophysics Data System (ADS)
Checkelsky, Joseph
2014-03-01
Breaking of time reversal symmetry has proven to be an incisive method for experimentally drawing out the exotic nature of topological insulators. In particular, the introduction of magnetic dopants in to three dimensional topological insulators has led to the realization of theoretically predicted novel types of ferromagnetic order and a quantized version of the anomalous Hall effect. Here, I will present recent work on the synthesis and measurement of bulk and thin film topological insulators doped with 3 d transition metals. I will discuss the ferromagnetic order that arises in various systems and the associated electrical transport response of the surface modes.
NASA Astrophysics Data System (ADS)
Singh, Rahul; Shukla, K. K.; Kumar, A.; Okram, G. S.; Singh, D.; Ganeshan, V.; Lakhani, Archana; Ghosh, A. K.; Chatterjee, Sandip
2016-09-01
Magnetoresistance (MR), thermo power, magnetization and Hall effect measurements have been performed on Co-doped Bi2Se3 topological insulators. The undoped sample shows that the maximum MR as a destructive interference due to a π-Berry phase leads to a decrease of MR. As the Co is doped, the linearity in MR is increased. The observed MR of Bi2Se3 can be explained with the classical model. The low temperature MR behavior of Co doped samples cannot be explained with the same model, but can be explained with the quantum linear MR model. Magnetization behavior indicates the establishment of ferromagnetic ordering with Co doping. Hall effect data also supports the establishment of ferromagnetic ordering in Co-doped Bi2Se3 samples by showing the anomalous Hall effect. Furthermore, when spectral weight suppression is insignificant, Bi2Se3 behaves as a dilute magnetic semiconductor. Moreover, the maximum power factor is observed when time reversal symmetry (TRS) is maintained. As the TRS is broken the power factor value is decreased, which indicates that with the rise of Dirac cone above the Fermi level the anomalous Hall effect and linearity in MR increase and the power factor decreases.
Singh, Rahul; Shukla, K K; Kumar, A; Okram, G S; Singh, D; Ganeshan, V; Lakhani, Archana; Ghosh, A K; Chatterjee, Sandip
2016-09-21
Magnetoresistance (MR), thermo power, magnetization and Hall effect measurements have been performed on Co-doped Bi2Se3 topological insulators. The undoped sample shows that the maximum MR as a destructive interference due to a π-Berry phase leads to a decrease of MR. As the Co is doped, the linearity in MR is increased. The observed MR of Bi2Se3 can be explained with the classical model. The low temperature MR behavior of Co doped samples cannot be explained with the same model, but can be explained with the quantum linear MR model. Magnetization behavior indicates the establishment of ferromagnetic ordering with Co doping. Hall effect data also supports the establishment of ferromagnetic ordering in Co-doped Bi2Se3 samples by showing the anomalous Hall effect. Furthermore, when spectral weight suppression is insignificant, Bi2Se3 behaves as a dilute magnetic semiconductor. Moreover, the maximum power factor is observed when time reversal symmetry (TRS) is maintained. As the TRS is broken the power factor value is decreased, which indicates that with the rise of Dirac cone above the Fermi level the anomalous Hall effect and linearity in MR increase and the power factor decreases. PMID:27419361
Hopf insulators and their topologically protected surface states
NASA Astrophysics Data System (ADS)
Wang, Sheng-Tao; Deng, Dong-Ling; Shen, Chao; Duan, Lu-Ming
2014-03-01
Three-dimensional (3D) topological insulators in general need to be protected by certain kinds of symmetries other than the presumed U(1) charge conservation. A peculiar exception is the Hopf insulators which are 3D topological insulators characterized by an integer Hopf index. To demonstrate the existence and physical relevance of the Hopf insulators, we construct a class of tight-binding model Hamiltonians which realize all kinds of Hopf insulators with arbitrary integer Hopf index. These Hopf insulator phases have topologically protected surface states and we numerically demonstrate the robustness of these topologically protected states under general random perturbations without any symmetry other than the U(1) charge conservation that is implicit in all kinds of topological insulators. NBR-PC (973 Program) 2011CBA00300 (2011CBA00302), the DARPA OLE program, the IARPA MUSIQC program, the ARO and the AFOSR MURI program.
Thermoelectric transport in topological insulators
NASA Astrophysics Data System (ADS)
Takahashi, Ryuji; Murakami, Shuichi
2012-12-01
Thermoelectric transport in topological insulators (TIs) is theoretically studied. TIs have gapless edge states in two dimensions, and do surface states in three dimensions. Both of the states have backscattering-free nature, and they remain gapless in the presence of nonmagnetic impurities. In particular, the edge states in two-dimensional TIs form perfect conducting channels. In this study, we calculate system-size dependence of thermoelectric properties in two-dimensional TIs, and evaluate the inelastic scattering length of the edge states by phonons, which affects the thermoelectric properties sensitively. We also study thermoelectric transport in three-dimensional (3D) TIs and compare with two dimensions. In both two- and three-dimensional TIs, there is a competition between the surface/edge and bulk transports in the thermoelectric phenomena. The surface transport in 3D TIs is relatively weak compared with the bulk transport due to impurities. Furthermore, we also study gapped 3D TIs in thin slab geometry and show large values of the figure of merit in the gapped system. This result is consistent with the previous work.
Floquet topological insulators for sound.
Fleury, Romain; Khanikaev, Alexander B; Alù, Andrea
2016-06-17
The unique conduction properties of condensed matter systems with topological order have recently inspired a quest for the similar effects in classical wave phenomena. Acoustic topological insulators, in particular, hold the promise to revolutionize our ability to control sound, allowing for large isolation in the bulk and broadband one-way transport along their edges, with topological immunity against structural defects and disorder. So far, these fascinating properties have been obtained relying on moving media, which may introduce noise and absorption losses, hindering the practical potential of topological acoustics. Here we overcome these limitations by modulating in time the acoustic properties of a lattice of resonators, introducing the concept of acoustic Floquet topological insulators. We show that acoustic waves provide a fertile ground to apply the anomalous physics of Floquet topological insulators, and demonstrate their relevance for a wide range of acoustic applications, including broadband acoustic isolation and topologically protected, nonreciprocal acoustic emitters.
Floquet topological insulators for sound
Fleury, Romain; Khanikaev, Alexander B; Alù, Andrea
2016-01-01
The unique conduction properties of condensed matter systems with topological order have recently inspired a quest for the similar effects in classical wave phenomena. Acoustic topological insulators, in particular, hold the promise to revolutionize our ability to control sound, allowing for large isolation in the bulk and broadband one-way transport along their edges, with topological immunity against structural defects and disorder. So far, these fascinating properties have been obtained relying on moving media, which may introduce noise and absorption losses, hindering the practical potential of topological acoustics. Here we overcome these limitations by modulating in time the acoustic properties of a lattice of resonators, introducing the concept of acoustic Floquet topological insulators. We show that acoustic waves provide a fertile ground to apply the anomalous physics of Floquet topological insulators, and demonstrate their relevance for a wide range of acoustic applications, including broadband acoustic isolation and topologically protected, nonreciprocal acoustic emitters. PMID:27312175
Floquet topological insulators for sound.
Fleury, Romain; Khanikaev, Alexander B; Alù, Andrea
2016-01-01
The unique conduction properties of condensed matter systems with topological order have recently inspired a quest for the similar effects in classical wave phenomena. Acoustic topological insulators, in particular, hold the promise to revolutionize our ability to control sound, allowing for large isolation in the bulk and broadband one-way transport along their edges, with topological immunity against structural defects and disorder. So far, these fascinating properties have been obtained relying on moving media, which may introduce noise and absorption losses, hindering the practical potential of topological acoustics. Here we overcome these limitations by modulating in time the acoustic properties of a lattice of resonators, introducing the concept of acoustic Floquet topological insulators. We show that acoustic waves provide a fertile ground to apply the anomalous physics of Floquet topological insulators, and demonstrate their relevance for a wide range of acoustic applications, including broadband acoustic isolation and topologically protected, nonreciprocal acoustic emitters. PMID:27312175
Floquet topological insulators for sound
NASA Astrophysics Data System (ADS)
Fleury, Romain; Khanikaev, Alexander B.; Alù, Andrea
2016-06-01
The unique conduction properties of condensed matter systems with topological order have recently inspired a quest for the similar effects in classical wave phenomena. Acoustic topological insulators, in particular, hold the promise to revolutionize our ability to control sound, allowing for large isolation in the bulk and broadband one-way transport along their edges, with topological immunity against structural defects and disorder. So far, these fascinating properties have been obtained relying on moving media, which may introduce noise and absorption losses, hindering the practical potential of topological acoustics. Here we overcome these limitations by modulating in time the acoustic properties of a lattice of resonators, introducing the concept of acoustic Floquet topological insulators. We show that acoustic waves provide a fertile ground to apply the anomalous physics of Floquet topological insulators, and demonstrate their relevance for a wide range of acoustic applications, including broadband acoustic isolation and topologically protected, nonreciprocal acoustic emitters.
Topological BF field theory description of topological insulators
Cho, Gil Young; Moore, Joel E.
2011-06-15
Research Highlights: > We show that a BF theory is the effective theory of 2D and 3D topological insulators. > The non-gauge-invariance of the bulk theory yields surface terms for a bosonized Dirac fermion. > The 'axion' term in electromagnetism is correctly obtained from gapped surfaces. > Generalizations to possible fractional phases are discussed in closing. - Abstract: Topological phases of matter are described universally by topological field theories in the same way that symmetry-breaking phases of matter are described by Landau-Ginzburg field theories. We propose that topological insulators in two and three dimensions are described by a version of abelian BF theory. For the two-dimensional topological insulator or quantum spin Hall state, this description is essentially equivalent to a pair of Chern-Simons theories, consistent with the realization of this phase as paired integer quantum Hall effect states. The BF description can be motivated from the local excitations produced when a {pi} flux is threaded through this state. For the three-dimensional topological insulator, the BF description is less obvious but quite versatile: it contains a gapless surface Dirac fermion when time-reversal-symmetry is preserved and yields 'axion electrodynamics', i.e., an electromagnetic E . B term, when time-reversal symmetry is broken and the surfaces are gapped. Just as changing the coefficients and charges of 2D Chern-Simons theory allows one to obtain fractional quantum Hall states starting from integer states, BF theory could also describe (at a macroscopic level) fractional 3D topological insulators with fractional statistics of point-like and line-like objects.
Topological Insulators from Electronic Superstructures
NASA Astrophysics Data System (ADS)
Sugita, Yusuke; Motome, Yukitoshi
2016-07-01
The possibility of realizing topological insulators by the spontaneous formation of electronic superstructures is theoretically investigated in a minimal two-orbital model including both the spin-orbit coupling and electron correlations on a triangular lattice. Using the mean-field approximation, we show that the model exhibits several different types of charge-ordered insulators, where the charge disproportionation forms a honeycomb or kagome superstructure. We find that the charge-ordered insulators in the presence of strong spin-orbit coupling can be topological insulators showing quantized spin Hall conductivity. Their band gap is dependent on electron correlations as well as the spin-orbit coupling, and even vanishes while showing the massless Dirac dispersion at the transition to a trivial charge-ordered insulator. Our results suggest a new route to realize and control topological states of quantum matter by the interplay between the spin-orbit coupling and electron correlations.
Topological Hopf-Chern insulators and the Hopf superconductor
NASA Astrophysics Data System (ADS)
Kennedy, Ricardo
2016-07-01
We introduce new three-dimensional (3D) topological phases of two-band models using the Pontryagin-Thom construction. In symmetry class A these are the infinitely many Hopf-Chern topological insulators, which are hybrids of layered Chern insulators and Hopf insulators. Being constructed by a modification of the experimentally observed Chern insulators, these provide promising candidates for the observation of a genuinely 3D topological phase in class A . In symmetry class C , there is a Z2 classification with the nontrivial topological phase, the Hopf superconductor, being realized by a construction that doubles a Hopf insulator in momentum space. For these new topological phases we introduce concrete tight-binding Hamiltonians and investigate their energy spectra in the presence of a boundary, revealing gapless surface modes in accordance with the bulk-boundary correspondence.
Classification of topological insulators and superconductors in three spatial dimensions
NASA Astrophysics Data System (ADS)
Ryu, Shinsei; Schnyder, Andreas; Furusaki, Akira; Ludwig, Andreas
2009-03-01
We systematically study topological phases of insulators and superconductors (or superfluids) in 3D. We find that there exist 3D topologically non-trivial insulators or superconductors in five out of ten symmetry classes introduced in seminal work by Altland and Zirnbauer within the context of random matrix theory, more than a decade ago. One of these is the recently introduced Z2 topological insulator in the symplectic (or spin-orbit) symmetry class. We show there exist precisely four more topological insulators. For these systems, all of which are time-reversal invariant in 3D, the space of insulating ground states satisfying certain discrete symmetry properties is partitioned into topological sectors that are separated by quantum phase transitions. Three of the above five topologically non-trivial phases can be realized as time-reversal invariant superconductors, and in these the different topological sectors are characterized by an integer winding number defined in momentum space. When such 3D topological insulators are terminated by a 2D surface, they support stable surface Dirac (Majorana) fermion modes.
Experimental Realizations of Magnetic Topological Insulator and Topological Crystalline Insulator
NASA Astrophysics Data System (ADS)
Xu, Suyang
2013-03-01
Over the past few years the experimental research on three-dimensional topological insulators have emerged as one of the most rapidly developing fields in condensed matter physics. In this talk, we report on two new developments in the field: The first part is on the dynamic interplay between ferromagnetism and the Z2 topological insulator state (leading to a magnetic topological insulator). We present our spin-resolved photoemission and magnetic dichroic experiments on MBE grown films where a hedgehog-like spin texture is revealed on the magnetically ordered surface of Mn-Bi2Se3 revealing a Berry's phase gradient in energy-momentum space of the crystal. A chemically/electrically tunable Berry's phase switch is further demonstrated via the tuning of the spin groundstate in Mn-Bi2Se3 revealed in our data (Nature Physics 8, 616 (2012)). The second part of this talk describes our experimental observation of a new topological phase of matter, namely a topological crystalline insulator where space group symmetries replace the role of time-reversal symmetry in an otherwise Z2 topological insulator predicted in theory. We experimentally investigate the possibility of a mirror symmetry protected topological phase transition in the Pb1-xSnxTe alloy system, which has long been known to contain an even number of band inversions based on band theory. Our experimental results show that at a composition below the theoretically predicted band inversion, the system is fully gapped, whereas in the band-inverted regime, the surface exhibits even number of spin-polarized Dirac cone states revealing mirror-protected topological order (Nature Communications 3, 1192 (2012)) distinct from that observed in Z2 topological insulators. We discuss future experimental possibilities opened up by these new developments in topological insulators research. This work is in collaboration with M. Neupane, C. Liu, N. Alidoust, I. Belopolski, D. Qian, D.M. Zhang, A. Richardella, A. Marcinkova, Q
Topological Insulators from Group Cohomology
NASA Astrophysics Data System (ADS)
Alexandradinata, A.; Wang, Zhijun; Bernevig, B. Andrei
2016-04-01
We classify insulators by generalized symmetries that combine space-time transformations with quasimomentum translations. Our group-cohomological classification generalizes the nonsymmorphic space groups, which extend point groups by real-space translations; i.e., nonsymmorphic symmetries unavoidably translate the spatial origin by a fraction of the lattice period. Here, we further extend nonsymmorphic groups by reciprocal translations, thus placing real and quasimomentum space on equal footing. We propose that group cohomology provides a symmetry-based classification of quasimomentum manifolds, which in turn determines the band topology. In this sense, cohomology underlies band topology. Our claim is exemplified by the first theory of time-reversal-invariant insulators with nonsymmorphic spatial symmetries. These insulators may be described as "piecewise topological," in the sense that subtopologies describe the different high-symmetry submanifolds of the Brillouin zone, and the various subtopologies must be pieced together to form a globally consistent topology. The subtopologies that we discover include a glide-symmetric analog of the quantum spin Hall effect, an hourglass-flow topology (exemplified by our recently proposed KHgSb material class), and quantized non-Abelian polarizations. Our cohomological classification results in an atypical bulk-boundary correspondence for our topological insulators.
Design of 3d Topological Data Structure for 3d Cadastre Objects
NASA Astrophysics Data System (ADS)
Zulkifli, N. A.; Rahman, A. Abdul; Hassan, M. I.
2016-09-01
This paper describes the design of 3D modelling and topological data structure for cadastre objects based on Land Administration Domain Model (LADM) specifications. Tetrahedral Network (TEN) is selected as a 3D topological data structure for this project. Data modelling is based on the LADM standard and it is used five classes (i.e. point, boundary face string, boundary face, tetrahedron and spatial unit). This research aims to enhance the current cadastral system by incorporating 3D topology model based on LADM standard.
A response theory of topological insulators
NASA Astrophysics Data System (ADS)
Leung, Wing Fung
A time-reversal invariant topological insulator is defined by its topological magnetoelectric response that is robust against disorder. The response formula, defined on a Brillouin torus, defines a Z2 invariant and classifies the topological phase. However, in the presence of disorder or the magnetic field, the notion of Brillouin torus is destroyed and the response formula is no longer well-defined. This has been a challenging open problem, and it is essental in defining a topological insulator. This thesis proposes a topological response theory that is free from this fundamental deficiency. We derived the magnetoelectric response formula in position space for a generic three dimensional model under disorder and finite magnetic field. For time-reversal invariant systems, we connected the result to the 2nd Chern number in Noncommutative Geometry. We developed the noncommutative theory of Chern numbers and showed that the quantization of the magnetoelectric response is robust against disorder. Numerical studies on serveral disodered topological models in 1D and 3D are presented.
EDITORIAL: Progress in topological insulators Progress in topological insulators
NASA Astrophysics Data System (ADS)
Morpurgo, Alberto; Trauzettel, Björn
2012-12-01
One of the most remarkable discoveries of the last few years in condensed matter physics is that the established distinction of crystalline solids in metals and insulators—which relies on the material band-structure—is incomplete. During the last several decades, the band structure of an uncountable variety of compounds of increasing complexity have been computed, and yet it has been overlooked that in the presence of sufficiently strong spin-orbit interaction, a new class of materials can be realized, that intrinsically behaves as insulators in their bulk and as metals at their surface. The discovery of this new class of materials was made only recently by Kane and Mele, during their theoretical studies of graphene in the presence of a sufficiently strong intrinsic spin-orbit interaction. Although the strength of the spin-orbit interaction in graphene is not sufficient to make the topological insulating state visible experimentally under currently reachable conditions, the validity and the originality of the concept were fully appreciated. Predictions for the occurrence of a two-dimensional topological insulating state in HgTe/CdTe heterostructures were made by Bernevig, Hughes and Zhang, and were followed by the experimental verification at Würzburg, in the Molenkamp group. Within a couple of years, this work brought the concept of topological insulator from an abstract theoretical discovery to an experimental reality, which stimulated further work. The concept of topological insulators was extended to the case of three-dimensional systems, for which an ideal experimental probe is angle-resolved photo-emission spectroscopy. Using this technique, specific theoretical predictions that had been made regarding the topological insulating character of different materials (e.g., for Bi-based compounds such as BiSb, Bi2Se3 or Bi2Te3), were verified experimentally through the direct observation of the Dirac surface fermions. This research was sufficient to put on
Classification of topological insulators and superconductors in three spatial dimensions
NASA Astrophysics Data System (ADS)
Schnyder, Andreas P.; Ryu, Shinsei; Furusaki, Akira; Ludwig, Andreas W. W.
2008-11-01
We systematically study topological phases of insulators and superconductors (or superfluids) in three spatial dimensions. We find that there exist three-dimensional (3D) topologically nontrivial insulators or superconductors in five out of ten symmetry classes introduced in seminal work by Altland and Zirnbauer within the context of random matrix theory, more than a decade ago. One of these is the recently introduced Z2 topological insulator in the symplectic (or spin-orbit) symmetry class. We show that there exist precisely four more topological insulators. For these systems, all of which are time-reversal invariant in three dimensions, the space of insulating ground states satisfying certain discrete symmetry properties is partitioned into topological sectors that are separated by quantum phase transitions. Three of the above five topologically nontrivial phases can be realized as time-reversal invariant superconductors. In these the different topological sectors are characterized by an integer winding number defined in momentum space. When such 3D topological insulators are terminated by a two-dimensional surface, they support a number (which may be an arbitrary nonvanishing even number for singlet pairing) of Dirac fermion (Majorana fermion when spin-rotation symmetry is completely broken) surface modes which remain gapless under arbitrary perturbations of the Hamiltonian that preserve the characteristic discrete symmetries, including disorder. In particular, these surface modes completely evade Anderson localization from random impurities. These topological phases can be thought of as three-dimensional analogs of well-known paired topological phases in two spatial dimensions such as the spinless chiral (px±ipy) -wave superconductor (or Moore-Read Pfaffian state). In the corresponding topologically nontrivial (analogous to “weak pairing”) and topologically trivial (analogous to “strong pairing”) 3D phases, the wave functions exhibit markedly distinct
Monolayer Topological Insulators: Silicene, Germanene, and Stanene
NASA Astrophysics Data System (ADS)
Ezawa, Motohiko
2015-12-01
We report the recent progress on the theoretical aspects of monolayer topological insulators including silicene, germanene and stanene, which are monolayer honeycomb structures of silicon, germanium and tin, respectively. They show quantum spin Hall effects in nature due to the spin-orbit interaction. The band gap can be tuned by applying perpendicular electric field, which induces a topological phase transition. We also analyze the topological properties of generic honeycomb systems together with the classification of topological insulators. Phase diagrams of topological insulators and superconductors in honeycomb systems are explicitly determined. We also investigate topological electronics including a topological field-effect transistor, the topological Kirchhoff's law and the topological spin-valleytronics.
Quantum Confined Sb: An Elemental Topological Insulator
NASA Astrophysics Data System (ADS)
Cairns, Shayne; Massengale, Jeremy; Liu, Zhonge-He; Keay, Joel; Gaspe, Chomani; Wickramasinghe, Kaushini; Mishima, Tetsuya; Santos, Michael; Murphy, Sheena
2015-03-01
Sb is a bulk semi-metal which is predicted to undergo a series of quantum phase transitions from a topological semi-metal to a 3D topological insulator (TI) to a 2D TI to a trivial insulator as a function of decreasing film thickness. We report magneto-transport studies on Sb(111) epilayers with thicknesses ranging from 0.7 to 3.2 nm grown via molecular beam epitaxy on nearly lattice-matched GaSb(111) substrates. For thicknesses greater than 1nm the films are conducting with a non-zero intercept at zero film thickness, indicating residual surface conduction. Below 1nm, there is an abrupt transition to insulating behavior consistent with predictions of a topological to trivial insulator. We have studied the magneto-resistance (MR) up to 18T in both perpendicular and tilted magnetic fields for a range of temperatures. The angular MR indicates 2D transport. For (B>4T) the MR is increasingly linear as the film thickness is reduced while at lower fields the transport is well described by weak antilocalization (WAL). A straightforward model combing bulk behavior and WAL assists in explaining this thickness evolution. Experiments on quantum interference in quantum wires are ongoing. DMR-1207537
Topological Insulators at Room Temperature
Zhang, Haijun; Liu, Chao-Xing; Qi, Xiao-Liang; Dai, Xi; Fang, Zhong; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.
2010-03-25
Topological insulators are new states of quantum matter with surface states protected by the time-reversal symmetry. In this work, we perform first-principle electronic structure calculations for Sb{sub 2}Te{sub 3}, Sb{sub 2}Se{sub 3}, Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} crystals. Our calculations predict that Sb{sub 2}Te{sub 3}, Bi{sub 2}T e{sub 3} and Bi{sub 2}Se{sub 3} are topological insulators, while Sb{sub 2}Se{sub 3} is not. In particular, Bi{sub 2}Se{sub 3} has a topologically non-trivial energy gap of 0.3eV , suitable for room temperature applications. We present a simple and unified continuum model which captures the salient topological features of this class of materials. These topological insulators have robust surface states consisting of a single Dirac cone at the {Lambda} point.
Time domain topology optimization of 3D nanophotonic devices
NASA Astrophysics Data System (ADS)
Elesin, Y.; Lazarov, B. S.; Jensen, J. S.; Sigmund, O.
2014-02-01
We present an efficient parallel topology optimization framework for design of large scale 3D nanophotonic devices. The code shows excellent scalability and is demonstrated for optimization of broadband frequency splitter, waveguide intersection, photonic crystal-based waveguide and nanowire-based waveguide. The obtained results are compared to simplified 2D studies and we demonstrate that 3D topology optimization may lead to significant performance improvements.
Organic topological insulators in organometallic lattices.
Wang, Z F; Liu, Zheng; Liu, Feng
2013-01-01
Topological insulators are a recently discovered class of materials having insulating bulk electronic states but conducting boundary states distinguished by nontrivial topology. So far, several generations of topological insulators have been theoretically predicted and experimentally confirmed, all based on inorganic materials. Here, based on first-principles calculations, we predict a family of two-dimensional organic topological insulators made of organometallic lattices. Designed by assembling molecular building blocks of triphenyl-metal compounds with strong spin-orbit coupling into a hexagonal lattice, this new classes of organic topological insulators are shown to exhibit nontrivial topological edge states that are robust against significant lattice strain. We envision that organic topological insulators will greatly broaden the scientific and technological impact of topological insulators.
Method for 3D Airway Topology Extraction
Grothausmann, Roman; Kellner, Manuela; Heidrich, Marko; Lorbeer, Raoul-Amadeus; Ripken, Tammo; Meyer, Heiko; Kuehnel, Mark P.; Ochs, Matthias; Rosenhahn, Bodo
2015-01-01
In lungs the number of conducting airway generations as well as bifurcation patterns varies across species and shows specific characteristics relating to illnesses or gene variations. A method to characterize the topology of the mouse airway tree using scanning laser optical tomography (SLOT) tomograms is presented in this paper. It is used to test discrimination between two types of mice based on detected differences in their conducting airway pattern. Based on segmentations of the airways in these tomograms, the main spanning tree of the volume skeleton is computed. The resulting graph structure is used to distinguish between wild type and surfactant protein (SP-D) deficient knock-out mice. PMID:25767561
Topology-driven magnetic quantum phase transition in topological insulators.
Zhang, Jinsong; Chang, Cui-Zu; Tang, Peizhe; Zhang, Zuocheng; Feng, Xiao; Li, Kang; Wang, Li-Li; Chen, Xi; Liu, Chaoxing; Duan, Wenhui; He, Ke; Xue, Qi-Kun; Ma, Xucun; Wang, Yayu
2013-03-29
The breaking of time reversal symmetry in topological insulators may create previously unknown quantum effects. We observed a magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 topological insulator films grown by means of molecular beam epitaxy. Across the critical point, a topological quantum phase transition is revealed through both angle-resolved photoemission measurements and density functional theory calculations. We present strong evidence that the bulk band topology is the fundamental driving force for the magnetic quantum phase transition. The tunable topological and magnetic properties in this system are well suited for realizing the exotic topological quantum phenomena in magnetic topological insulators.
Charge and spin topological insulators
Kopaev, Yu. V. Gorbatsevich, A. A.; Belyavskii, V. I.
2011-09-15
The topologically nontrivial states of matter-charge and spin topological insulators, which exhibit, respectively, properties of the integer quantum Hall effect and the quantum spin Hall effect-are discussed. The topological characteristics (invariant with respect to weak adiabatic changes in the Hamiltonian parameters) which lead to such states are considered. The model of a 2D hexagonal lattice having symmetries broken with respect to time reversal and spatial inversion which was proposed by Haldane and marked the beginning of unprecedented activity in the study of topologically nontrivial states is discussed. This model relates the microscopic nature of the symmetry breaking with respect to the time reversal to the occurrence of spontaneous orbital currents which circulate within a unit cell. Such currents become zero upon summation over the unit cell, but they may form spreading current states at the surface which are similar to the edge current states under the quantum Hall effect. The first model of spontaneous currents (exciton insulator model) is considered, and the possibility of implementing new topologically nontrivial states in this model is discussed.
3D dimeron as a stable topological object
NASA Astrophysics Data System (ADS)
Yang, Shijie; Liu, Yongkai
2015-03-01
Searching for novel topological objects is always an intriguing task for scientists in various fields. We study a new three-dimensional (3D) topological structure called 3D dimeron in the trapped two-component Bose-Einstein condensates. The 3D dimeron differs to the conventional 3D skyrmion for the condensates hosting two interlocked vortex-rings. We demonstrate that the vortex-rings are connected by a singular string and the complexity constitutes a vortex-molecule. The stability is investigated through numerically evolving the Gross-Pitaevskii equations, giving a coherent Rabi coupling between the two components. Alternatively, we find that the stable 3D dimeron can be naturally generated from a vortex-free Gaussian wave packet via incorporating a synthetic non-Abelian gauge potential into the condensates. This work is supported by the NSF of China under Grant No. 11374036 and the National 973 program under Grant No. 2012CB821403.
Quantum capacitance in topological insulators.
Xiu, Faxian; Meyer, Nicholas; Kou, Xufeng; He, Liang; Lang, Murong; Wang, Yong; Yu, Xinxin; Fedorov, Alexei V; Zou, Jin; Wang, Kang L
2012-01-01
Topological insulators show unique properties resulting from massless, Dirac-like surface states that are protected by time-reversal symmetry. Theory predicts that the surface states exhibit a quantum spin Hall effect with counter-propagating electrons carrying opposite spins in the absence of an external magnetic field. However, to date, the revelation of these states through conventional transport measurements remains a significant challenge owing to the predominance of bulk carriers. Here, we report on an experimental observation of Shubnikov-de Haas oscillations in quantum capacitance measurements, which originate from topological helical states. Unlike the traditional transport approach, the quantum capacitance measurements are remarkably alleviated from bulk interference at high excitation frequencies, thus enabling a distinction between the surface and bulk. We also demonstrate easy access to the surface states at relatively high temperatures up to 60 K. Our approach may eventually facilitate an exciting exploration of exotic topological properties at room temperature.
Quantum anomalous Hall effect in topological insulator memory
Jalil, Mansoor B. A.; Tan, S. G.; Siu, Z. B.
2015-05-07
We theoretically investigate the quantum anomalous Hall effect (QAHE) in a magnetically coupled three-dimensional-topological insulator (3D-TI) system. We apply the generalized spin-orbit coupling Hamiltonian to obtain the Hall conductivity σ{sup xy} of the system. The underlying topology of the QAHE phenomenon is then analyzed to show the quantization of σ{sup xy} and its relation to the Berry phase of the system. Finally, we analyze the feasibility of utilizing σ{sup xy} as a memory read-out in a 3D-TI based memory at finite temperatures, with comparison to known magnetically doped 3D-TIs.
Classification of Topological Insulators and Superconductors
NASA Astrophysics Data System (ADS)
Schnyder, Andreas P.; Ryu, Shinsei; Furusaki, Akira; Ludwig, Andreas W. W.
2009-05-01
An exhaustive classification scheme of topological insulators and superconductors is presented. The key property of topological insulators (superconductors) is the appearance of gapless degrees of freedom at the interface/boundary between a topologically trivial and a topologically non-trivial state. Our approach consists in reducing the problem of classifying topological insulators (superconductors) in d spatial dimensions to the problem of Anderson localization at a (d-1) dimensional boundary of the system. We find that in each spatial dimension there are precisely five distinct classes of topological insulators (superconductors). The different topological sectors within a given topological insulator (superconductor) can be labeled by an integer winding number or a Z2 quantity. One of the five topological insulators is the "quantum spin Hall" (or: Z2 topological) insulator in d = 2, and its generalization in d = 3 dimensions. For each dimension d, the five topological insulators correspond to a certain subset of five of the ten generic symmetry classes of Hamiltonians introduced more than a decade ago by Altland and Zirnbauer in the context of disordered systems (which generalizes the three well known "Wigner and Dyson" symmetry classes).
Interfacing Topological Insulators with Ferromagnetism
NASA Astrophysics Data System (ADS)
Richardella, Anthony
In topological insulators, the surface states arise from strong spin-orbit coupling while the degeneracy of the Dirac point is protected by time reversal symmetry. Introducing magnetism in proximity to the surface states breaks this symmetry, destroying the non-trivial Berry phase at the Dirac point and leads to a hedgehog spin texture near the newly opened magnetic gap. This symmetry broken phase leads to a host of unusual physics, such as the quantum anomalous Hall (QAH) effect. In this talk, we discuss the growth by molecular beam epitaxy and characterization of such magnetically interfaced and magnetically doped topological insulators. Such materials often suffer from structural defects and interfacial layers, as well as from degradation during device fabrication. In particular, it is shown that Cr doped (Bi1-x,Sbx)2Te3 can exhibit perfect Hall quantization at low temperatures despite these defects. However, the magnetic ordering of this material was found to be quite unusual, displaying a super-paramagnetic like character, perhaps reflecting this disorder. Such observations highlight the surprising behavior of such broken symmetry phases in topological materials. This work was performed in collaboration with A. Kandala, M. Liu, W. Wang, N.P. Ong, C.-X. Liu, and N. Samarth, in addition to the authors of the references cited. This work was supported by funding from ARO/MURI, DARPA and ONR.
Topological Insulator and Thermoelectric Effects
NASA Astrophysics Data System (ADS)
Xu, Yong
The recent discovery of topological insulator (TI) offers new opportunities for the development of thermoelectricity, because many TIs (like Bi2Te3) are excellent thermoelectric materials. In this talk, I will first introduce our theoretical predictions of anomalous Seebeck effect and strong size effect in TI [PRL 112, 226801 (2014)]. Then I will report our recent proof experiments, which find in TI thin films that (i) the hole-type Seebeck effect and the electron-type Hall effect coexist in the same TI sample for all the measured temperatures (up to 300 K), and (ii) the thermoelectric properties depend sensitively on the film thickness. The unconventional phenomena are revealed to be closely related to the topological nature of the material. These findings may inspire new ideas for designing TI-based high-efficiency thermoelectric devices.
Experimental realization of new topological phases of matter beyond topological insulators
NASA Astrophysics Data System (ADS)
Neupane, Madhab
A three-dimensional (3D) Z2 topological insulator (TI) is a crystalline solid, which is an insulator in the bulk but features spin-polarized Dirac electron states on its surface. In 2007, the first 3D TI was discovered in a bismuth-based compound. The discovery of the first TI tremendously accelerated research into phases of matter characterized by non-trivial topological invariants. Not only did the 3D Z2 TI itself attract great research interest, it also inspired the prediction of a range of new topological phases of matter. The primary examples are the topological Kondo insulator, the topological 3D Dirac and Weyl semimetals, the topological crystalline insulator, topological nodal line semimetal and the topological superconductor. Each of these phases was predicted to exhibit surface states with unique properties protected by a non-trivial topological invariant. In this talk, I will discuss the experimental realization of these new phases of matter in real materials by momentum and time-resolved photoemission spectroscopy. Special attention will be given to the experimental discovery of Dirac semimetal phase in Cd3As2 and topological nodal-line phase in PbTaSe2. The unusual properties of the protected topological surface states can lead to potential future applications in spintronics and quantum information, which hold promise to revolutionize our electronics and energy industries. This work is supported by start-up funds from University of Central Florida (MN) andLos Alamos National Laboratory LDRD program. The work at Princeton and Princeton-led ARPES measurements are supported by the Gordon and Betty Moore Foundations EPiQS Initiative through grant GBMF4547 (Hasan) and by U.S. Department of Energy DE-FG-02-05ER46200.
Topological Insulator Nanowires and Nanoribbons
Kong, D.S.
2010-06-02
Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi{sub 2}Se{sub 3} material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi{sub 2}Se{sub 3} nanomaterials with a variety of morphologies. The synthesis of Bi{sub 2}Se{sub 3} nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [11-20] direction with a rectangular crosssection and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with {approx}1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitals to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states.
An Automated 3d Indoor Topological Navigation Network Modelling
NASA Astrophysics Data System (ADS)
Jamali, A.; Rahman, A. A.; Boguslawski, P.; Gold, C. M.
2015-10-01
Indoor navigation is important for various applications such as disaster management and safety analysis. In the last decade, indoor environment has been a focus of wide research; that includes developing techniques for acquiring indoor data (e.g. Terrestrial laser scanning), 3D indoor modelling and 3D indoor navigation models. In this paper, an automated 3D topological indoor network generated from inaccurate 3D building models is proposed. In a normal scenario, 3D indoor navigation network derivation needs accurate 3D models with no errors (e.g. gap, intersect) and two cells (e.g. rooms, corridors) should touch each other to build their connections. The presented 3D modeling of indoor navigation network is based on surveying control points and it is less dependent on the 3D geometrical building model. For reducing time and cost of indoor building data acquisition process, Trimble LaserAce 1000 as surveying instrument is used. The modelling results were validated against an accurate geometry of indoor building environment which was acquired using Trimble M3 total station.
Weak antilocalisation in topological insulators
NASA Astrophysics Data System (ADS)
Bi, Xintao; Hankiewicz, Ewelina; Culcer, Dimitrie
2014-03-01
Topological insulators (TI) have changed our understanding of insulating behaviour. They are insulators in the bulk but conducting along their surfaces due to spin-orbit interaction. Much of the recent research focuses on overcoming the transport bottleneck, the fact that surface state transport is overwhelmed by bulk transport stemming from unintentional doping. The key to overcoming this bottleneck is identifying unambiguous signatures of surface state transport. This talk will discuss one such signature, which is manifest in the coherent backscattering of electrons. Due to strong spin-orbit coupling in TI one expects to observe weak antilocalisation rather than weak localisation, meaning that coherent backscattering increases the electrical conductivity. The features of this effect, however, are rather subtle, because in TI the impurities have strong spin-orbit coupling as well. I will show that spin-orbit coupled impurities introduce an additional time scale, which is expected to be shorter than the dephasing time, and the resulting conductivity has a logarithmic dependence on the carrier density, a behaviour hitherto unknown in 2D electron systems. The result we predict is observable experimentally and would provide a smoking gun test of surface transport.
Quantum anomalous Hall effect in magnetic topological insulators
Wang, Jing; Lian, Biao; Zhang, Shou -Cheng
2015-08-25
The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Here, we give a theoretical introduction to the quantum anomalous Hall (QAH) effect based on magnetic topological insulators in two-dimensions (2D) and three-dimensions (3D). In 2D topological insulators, magnetic order breaks the symmetry between the counter-propagating helical edge states, and as a result, the quantum spin Hall effect can evolve into the QAH effect. In 3D, magnetic order opens up a gap for the topological surface states, and chiral edge state has been predicted to exist on the magnetic domain walls. We presentmore » the phase diagram in thin films of a magnetic topological insulator and review the basic mechanism of ferromagnetic order in magnetically doped topological insulators. We also review the recent experimental observation of the QAH effect. Furthermore, we discuss more recent theoretical work on the coexistence of the helical and chiral edge states, multi-channel chiral edge states, the theory of the plateau transition, and the thickness dependence in the QAH effect.« less
Quantum anomalous Hall effect in magnetic topological insulators
Wang, Jing; Lian, Biao; Zhang, Shou -Cheng
2015-08-25
The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Here, we give a theoretical introduction to the quantum anomalous Hall (QAH) effect based on magnetic topological insulators in two-dimensions (2D) and three-dimensions (3D). In 2D topological insulators, magnetic order breaks the symmetry between the counter-propagating helical edge states, and as a result, the quantum spin Hall effect can evolve into the QAH effect. In 3D, magnetic order opens up a gap for the topological surface states, and chiral edge state has been predicted to exist on the magnetic domain walls. We present the phase diagram in thin films of a magnetic topological insulator and review the basic mechanism of ferromagnetic order in magnetically doped topological insulators. We also review the recent experimental observation of the QAH effect. Furthermore, we discuss more recent theoretical work on the coexistence of the helical and chiral edge states, multi-channel chiral edge states, the theory of the plateau transition, and the thickness dependence in the QAH effect.
Topological insulators: A romance with many dimensions
NASA Astrophysics Data System (ADS)
Manoharan, Hari C.
2010-07-01
Electric charges on the boundaries of certain insulators are programmed by topology to keep moving forward when they encounter an obstacle, rather than scattering backwards and increasing the resistance of the system. This is just one reason why topological insulators are one of the hottest topics in physics right now.
Thermodynamic and topological phase diagrams of correlated topological insulators
NASA Astrophysics Data System (ADS)
Zdulski, Damian; Byczuk, Krzysztof
2015-09-01
A definition of topological phases of density matrices is presented. The topological invariants in case of both noninteracting and interacting systems are extended to nonzero temperatures. The influence of electron interactions on topological insulators at finite temperatures is investigated. A correlated topological insulator is described by the Kane-Mele model, which is extended by the interaction term of the Falicov-Kimball type. Within the Hartree-Fock and the Hubbard I approximations, thermodynamic and topological phase diagrams are determined where the long-range order is included. The results show that correlation effects lead to a strong suppression of the existence of the nontrivial topological phase. In the homogeneous phase, we find a purely correlation driven phase transition into the topologically trivial Mott insulator.
Study of the Topological-insulator-based Topological Superconductors
NASA Astrophysics Data System (ADS)
Qian, Dong
Three-dimensional topological insulators possess nontrivial spin-momentum locked surface states under the protection of time-reversal symmetry. The interplay between topological order and superconductivity can lead to topological superconducting state. In this talk, I will discuss our recent progress in topological-insulator-based topological superconductors. Using molecular beam epitaxy (MBE) method, we succeeded in fabricating very high quality TI/s-wave superconductor heterostructure by growing topological insulator thin films on the conventional superconductor niobium diselenide (NbSe2) substrate. Using low temperature scanning tunneling microscopy/spectroscopy (STM/STS) and angle-resolved photoemission spectroscopy (ARPES), we systematically studied its electronic structure and superconducting behavior. Through superconducting proximity effect, coexistence of Cooper pairs and topological surface states on the surface of topological insulator film was realized. By exploring the superconducting vortex core state as the function of film thickness, existing of nontrivial superconducting state on the TI's surface was proposed. Our topological insulator/superconductor heterostructure may host single zero-energy Majorana mode in the vortex core. In addition, I will also discuss STM and ARPES studies on the recently discovered superconducting Sr-doped Bi2Se3 bulk crystals. Our results suggest that Sr-doped Bi2Se3 could be an excellent candidate for exploring topological superconducting states. Supported by the Ministry of Science and Technology of China and NSFC.
Superlattice valley engineering for designer topological insulators.
Li, Xiao; Zhang, Fan; Niu, Qian; Feng, Ji
2014-09-30
A topological insulator is a novel state of quantum matter, characterized by symmetry-protected Dirac interfacial states within its bulk gap. Tremendous effort has been invested into the search for topological insulators. To date, the discovery of topological insulators has been largely limited to natural crystalline solids. Therefore, it is highly desirable to tailor-make various topological states of matter by design, starting with but a few accessible materials or elements. Here, we establish that valley-dependent dimerization of Dirac surface states can be exploited to induce topological quantum phase transitions, in a binary superlattice bearing symmetry-unrelated interfacial Dirac states. This mechanism leads to a rich phase diagram and allows for rational design of strong topological insulators, weak topological insulators, and topological crystalline insulators. Our ab initio simulations further demonstrate this mechanism in [111] and [110] superlattices of calcium and tin tellurides. While our results reveal a remarkable phase diagram for the binary superlattice, the mechanism is a general route to design various topological states.
Spin- and angle-resolved photoemission on the topological Kondo insulator candidate: SmB6.
Xu, Nan; Ding, Hong; Shi, Ming
2016-09-14
Topological Kondo insulators are a new class of topological insulators in which metallic surface states protected by topological invariants reside in the bulk band gap at low temperatures. Unlike other 3D topological insulators, a truly insulating bulk state, which is critical for potential applications in next-generation electronic devices, is guaranteed by many-body effects in the topological Kondo insulator. Furthermore, the system has strong electron correlations that can serve as a testbed for interacting topological theories. This topical review focuses on recent advances in the study of SmB6, the most promising candidate for a topological Kondo insulator, from the perspective of spin- and angle-resolved photoemission spectroscopy with highlights of some important transport results.
Spin- and angle-resolved photoemission on the topological Kondo insulator candidate: SmB6
NASA Astrophysics Data System (ADS)
Xu, Nan; Ding, Hong; Shi, Ming
2016-09-01
Topological Kondo insulators are a new class of topological insulators in which metallic surface states protected by topological invariants reside in the bulk band gap at low temperatures. Unlike other 3D topological insulators, a truly insulating bulk state, which is critical for potential applications in next-generation electronic devices, is guaranteed by many-body effects in the topological Kondo insulator. Furthermore, the system has strong electron correlations that can serve as a testbed for interacting topological theories. This topical review focuses on recent advances in the study of SmB6, the most promising candidate for a topological Kondo insulator, from the perspective of spin- and angle-resolved photoemission spectroscopy with highlights of some important transport results.
Topological proximity effect in a topological insulator hybrid.
Shoman, T; Takayama, A; Sato, T; Souma, S; Takahashi, T; Oguchi, T; Segawa, Kouji; Ando, Yoichi
2015-03-12
It is well known that a topologically protected gapless state appears at an interface between a topological insulator and an ordinary insulator; however, the physics of the interface between a topological insulator and a metal has largely been left unexplored. Here we report a novel phenomenon termed topological proximity effect, which occurs between a metallic ultrathin film and a three-dimensional topological insulator. We study one bilayer of bismuth metal grown on the three-dimensional topological insulator material TlBiSe2, and by using spin- and angle-resolved photoemission spectroscopy, we found evidence that the topological Dirac-cone state migrates from the surface of TlBiSe2 to the attached one-bilayer Bi. We show that such a migration of the topological state occurs as a result of strong spin-dependent hybridization of the wave functions at the interface, which is also supported by our first-principles calculations. This discovery points to a new route to manipulating the topological properties of materials.
Amperean Pairing at the Surface of Topological Insulators.
Kargarian, Mehdi; Efimkin, Dmitry K; Galitski, Victor
2016-08-12
The surface of a 3D topological insulator is described by a helical electron state with the electron's spin and momentum locked together. We show that in the presence of ferromagnetic fluctuations the surface of a topological insulator is unstable towards a superconducting state with unusual pairing, dubbed Amperean pairing. The key idea is that the dynamical fluctuations of a ferromagnetic layer deposited on the surface of a topological insulator couple to the electrons as gauge fields. The transverse components of the magnetic gauge fields are unscreened and can mediate an effective interaction between electrons. There is an attractive interaction between electrons with momenta in the same direction which makes the pairing to be of Amperean type. We show that this attractive interaction leads to a p-wave pairing instability of the Fermi surface in the Cooper channel. PMID:27563988
Amperean Pairing at the Surface of Topological Insulators
NASA Astrophysics Data System (ADS)
Kargarian, Mehdi; Efimkin, Dmitry K.; Galitski, Victor
2016-08-01
The surface of a 3D topological insulator is described by a helical electron state with the electron's spin and momentum locked together. We show that in the presence of ferromagnetic fluctuations the surface of a topological insulator is unstable towards a superconducting state with unusual pairing, dubbed Amperean pairing. The key idea is that the dynamical fluctuations of a ferromagnetic layer deposited on the surface of a topological insulator couple to the electrons as gauge fields. The transverse components of the magnetic gauge fields are unscreened and can mediate an effective interaction between electrons. There is an attractive interaction between electrons with momenta in the same direction which makes the pairing to be of Amperean type. We show that this attractive interaction leads to a p -wave pairing instability of the Fermi surface in the Cooper channel.
Electrically Tunable Magnetism in Magnetic Topological Insulators.
Wang, Jing; Lian, Biao; Zhang, Shou-Cheng
2015-07-17
The external controllability of the magnetic properties in topological insulators would be important both for fundamental and practical interests. Here we predict the electric-field control of ferromagnetism in a thin film of insulating magnetic topological insulators. The decrease of band inversion by the application of electric fields results in a reduction of magnetic susceptibility, and hence in the modification of magnetism. Remarkably, the electric field could even induce the magnetic quantum phase transition from ferromagnetism to paramagnetism. We further propose a transistor device in which the dissipationless charge transport of chiral edge states is controlled by an electric field. In particular, the field-controlled ferromagnetism in a magnetic topological insulator can be used for voltage based writing of magnetic random access memories in magnetic tunnel junctions. The simultaneous electrical control of magnetic order and chiral edge transport in such devices may lead to electronic and spintronic applications for topological insulators.
Topological insulators and superconductors from string theory
Ryu, Shinsei; Takayanagi, Tadashi
2010-10-15
Topological insulators and superconductors in different spatial dimensions and with different discrete symmetries have been fully classified recently, revealing a periodic structure for the pattern of possible types of topological insulators and superconductors, both in terms of spatial dimensions and in terms of symmetry classes. It was proposed that K theory is behind the periodicity. On the other hand, D-branes, a solitonic object in string theory, are also known to be classified by K theory. In this paper, by inspecting low-energy effective field theories realized by two parallel D-branes, we establish a one-to-one correspondence between the K-theory classification of topological insulators/superconductors and D-brane charges. In addition, the string theory realization of topological insulators and superconductors comes naturally with gauge interactions, and the Wess-Zumino term of the D-branes gives rise to a gauge field theory of topological nature, such as ones with the Chern-Simons term or the {theta} term in various dimensions. This sheds light on topological insulators and superconductors beyond noninteracting systems, and the underlying topological field theory description thereof. In particular, our string theory realization includes the honeycomb lattice Kitaev model in two spatial dimensions, and its higher-dimensional extensions. Increasing the number of D-branes naturally leads to a realization of topological insulators and superconductors in terms of holography (AdS/CFT).
Topological insulators on a Mobius strip
NASA Astrophysics Data System (ADS)
Huang, Lang-Tao; Lee, Dung-Hai
2011-11-01
We study the two-dimensional Chern insulator and spin Hall insulator on a nonorientable Riemann surface, the Mobius strip, where the usual band-structure topological invariant is not defined. We show that while the flow pattern of edge currents can detect the twist of the Mobius strip in the case of Chern insulator, it can not do so for the spin Hall insulator.
Topological insulators on a Mobius Strip
NASA Astrophysics Data System (ADS)
Huang, Lang-Tao; Lee, Dung-Hai
2012-02-01
We study the two dimensional Chern insulator and spin Hall insulator on a non-orientable Riemann surface, the Mobius strip, where the usual bandstructure topological invariant is not defined. We show that while the flow pattern of edge currents can detect the twist of the Mobius strip in the case of Chern insulator, it can not do so in spin Hall insulator [1]. [4pt] [1] Lang-Tao Huang and Dung-Hai Lee, Phys. Rev. B 84, 193106 (2011)
Space group constraints on weak indices in topological crystalline insulators
NASA Astrophysics Data System (ADS)
Varjas, Daniel; de Juan, Fernando; Lu, Yuan-Ming
In this work we derive constraints on weak indices of topological insulators and superconductors coming from space group symmetry. Weak indices are topological invariants of lower dimensional slices of the Brillouin zone, notable examples are the Chern numbers in class A and weak ℤ2 indices in class AII in 3D. The components of the weak indices form a momentum space vector that transforms in a simple fashion under space group symmetries, using results of momentum space crystallography we find the allowed values for each Bravais lattice. Nonsymmorphic symmetries, such as screw axes and glide planes pose additional constraints. Accounting for both of these we find that most space groups experience some restriction, to the extent that some cannot support nontrivial weak topological insulators and superconductors at all. This result puts a strong constraint on candidates in the experimental and numerical search for topological materials based on the lattice structure alone.
3D surface topology guides stem cell adhesion and differentiation.
Viswanathan, Priyalakshmi; Ondeck, Matthew G; Chirasatitsin, Somyot; Ngamkham, Kamolchanok; Reilly, Gwendolen C; Engler, Adam J; Battaglia, Giuseppe
2015-06-01
Polymerized high internal phase emulsion (polyHIPE) foams are extremely versatile materials for investigating cell-substrate interactions in vitro. Foam morphologies can be controlled by polymerization conditions to result in either open or closed pore structures with different levels of connectivity, consequently enabling the comparison between 2D and 3D matrices using the same substrate with identical surface chemistry conditions. Additionally, here we achieve the control of pore surface topology (i.e. how different ligands are clustered together) using amphiphilic block copolymers as emulsion stabilizers. We demonstrate that adhesion of human mesenchymal progenitor (hES-MP) cells cultured on polyHIPE foams is dependent on foam surface topology and chemistry but is independent of porosity and interconnectivity. We also demonstrate that the interconnectivity, architecture and surface topology of the foams has an effect on the osteogenic differentiation potential of hES-MP cells. Together these data demonstrate that the adhesive heterogeneity of a 3D scaffold could regulate not only mesenchymal stem cell attachment but also cell behavior in the absence of soluble growth factors.
3D Surface Topology Guides Stem Cell Adhesion and Differentiation
Viswanathan, Priyalakshmi; Ondeck, Matthew G.; Chirasatitsin, Somyot; Nghamkham, Kamolchanok; Reilly, Gwendolen C.; Engler, Adam J.; Battaglia, Giuseppe
2015-01-01
Polymerized high internal phase emulsion (polyHIPE) foams are extremely versatile materials for investigating cell-substrate interactions in vitro. Foam morphologies can be controlled by polymerization conditions to result in either open or closed pore structures with different levels of connectivity, consequently enabling the comparison between 2D and 3D matrices using the same substrate with identical surface chemistry conditions. Additionally, here we achieve the control of pore surface topology (i.e. how different ligands are clustered together) using amphiphilic block copolymers as emulsion stabilisers. We demonstrate that adhesion of human mesenchymal progenitor (hES-MP) cells cultured on polyHIPE foams is dependent on foam surface topology and chemistry but is independent of porosity and interconnectivity. We also demonstrate that the interconnectivity, architecture and surface topology of the foams has an effect on the osteogenic differentiation potential of hES-MP cells. Together these data demonstrate that the adhesive heterogeneity of a 3D scaffold could regulate not only mesenchymal stem cell attachment but also cell behavior in the absence of soluble growth factors. PMID:25818420
Induced topological phases at the boundary of 3D topological superconductors.
Finch, Peter; de Lisle, James; Palumbo, Giandomenico; Pachos, Jiannis K
2015-01-01
We present tight-binding models of 3D topological superconductors in class DIII that support a variety of winding numbers. We show that gapless Majorana surface states emerge at their boundary in agreement with the bulk-boundary correspondence. At the presence of a Zeeman field, the surface states become gapped and the boundary behaves as a 2D superconductor in class D. Importantly, the 2D and 3D winding numbers are in agreement, signifying that the topological phase of the boundary is induced by the phase of the 3D bulk. Hence, the boundary of a 3D topological superconductor in class DIII can be used for the robust realization of localized Majorana zero modes. PMID:25615491
Spin Circuit Representation of Spin Pumping in Topological Insulators
NASA Astrophysics Data System (ADS)
Roy, Kuntal
Earlier we developed spin circuit representation of spin pumping and combined it with the spin circuit representation for the inverse spin Hall effect to show that it reproduces the established results in literature. Here we construct the spin circuit representation of spin pumping in topological insulators. The discovery of spin-polarized surface states in three-dimensional (3D) topological insulators (TIs) with strong spin-orbit coupling is promising for the development of spintronics. There is considerable bulk conduction too in 3D TIs (e.g., Bi2Se3) apart from possessing the surface states. We utilize the spin circuit model for spin orbit torques in topological insulator surface states to develop the equivalent circuit model of spin pumping in topological insulators. Such equivalent circuit model developed here can be utilized to analyze available experimental results and evaluate more complex structures. This work was supported by FAME, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA.
Dirac Fermions without bulk backscattering in rhombohedral topological insulators
NASA Astrophysics Data System (ADS)
Mera Acosta, Carlos; Lima, Matheus; Seixas, Leandro; da Silva, Antônio; Fazzio, Adalberto
2015-03-01
The realization of a spintronic device using topological insulators is not trivial, because there are inherent difficulties in achieving the surface transport regime. The majority of 3D topological insulators materials (3DTI) despite of support helical metallic surface states on an insulating bulk, forming topological Dirac fermions protected by the time-reversal symmetry, exhibit electronic scattering channels due to the presence of residual continuous bulk states near the Dirac-point. From ab initio calculations, we studied the microscopic origin of the continuous bulk states in rhombohedral topological insulators materials with the space group D3d 5 (R 3 m) , showing that it is possible to understand the emergence of residual continuous bulk states near the Dirac-point into a six bands effective model, where the breaking of the R3 symmetry beyond the Γ point has an important role in the hybridization of the px, py and pz atomic orbitals. Within these model, the mechanisms known to eliminate the bulk scattering, for instance: the stacking faults (SF), electric field and alloy, generated the similar effect in the effective states of the 3DTI. Finally, we show how the surface electronic transport is modified by perturbations of bulk with SF. We would like to thank the financial support by Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP).
Topological insulators in random potentials
NASA Astrophysics Data System (ADS)
Pieper, Andreas; Fehske, Holger
2016-01-01
We investigate the effects of magnetic and nonmagnetic impurities on the two-dimensional surface states of three-dimensional topological insulators (TIs). Modeling weak and strong TIs using a generic four-band Hamiltonian, which allows for a breaking of inversion and time-reversal symmetries and takes into account random local potentials as well as the Zeeman and orbital effects of external magnetic fields, we compute the local density of states, the single-particle spectral function, and the conductance for a (contacted) slab geometry by numerically exact techniques based on kernel polynomial expansion and Green's function approaches. We show that bulk disorder refills the surface-state Dirac gap induced by a homogeneous magnetic field with states, whereas orbital (Peierls-phase) disorder preserves the gap feature. The former effect is more pronounced in weak TIs than in strong TIs. At moderate randomness, disorder-induced conducting channels appear in the surface layer, promoting diffusive metallicity. Random Zeeman fields rapidly destroy any conducting surface states. Imprinting quantum dots on a TI's surface, we demonstrate that carrier transport can be easily tuned by varying the gate voltage, even to the point where quasibound dot states may appear.
Constraints on topological order in mott insulators.
Zaletel, Michael P; Vishwanath, Ashvin
2015-02-20
We point out certain symmetry induced constraints on topological order in Mott insulators (quantum magnets with an odd number of spin 1/2 moments per unit cell). We show, for example, that the double-semion topological order is incompatible with time reversal and translation symmetry in Mott insulators. This sharpens the Hastings-Oshikawa-Lieb-Schultz-Mattis theorem for 2D quantum magnets, which guarantees that a fully symmetric gapped Mott insulator must be topologically ordered, but is silent about which topological order is permitted. Our result applies to the kagome lattice quantum antiferromagnet, where recent numerical calculations of the entanglement entropy indicate a ground state compatible with either toric code or double-semion topological order. Our result rules out the latter possibility.
Constraints on topological order in mott insulators.
Zaletel, Michael P; Vishwanath, Ashvin
2015-02-20
We point out certain symmetry induced constraints on topological order in Mott insulators (quantum magnets with an odd number of spin 1/2 moments per unit cell). We show, for example, that the double-semion topological order is incompatible with time reversal and translation symmetry in Mott insulators. This sharpens the Hastings-Oshikawa-Lieb-Schultz-Mattis theorem for 2D quantum magnets, which guarantees that a fully symmetric gapped Mott insulator must be topologically ordered, but is silent about which topological order is permitted. Our result applies to the kagome lattice quantum antiferromagnet, where recent numerical calculations of the entanglement entropy indicate a ground state compatible with either toric code or double-semion topological order. Our result rules out the latter possibility. PMID:25763971
Electrical control of spin in topological insulators
NASA Astrophysics Data System (ADS)
Chang, Kai
2012-02-01
All-electrical manipulation of electron spin in solids becomes a central issue of quantum information processing and quantum computing. The many previous proposals are based on spin-orbit interactions in semiconductors. Topological insulator, a strong spin-orbit coupling system, make it possible to control the spin transport electrically. Recent calculations proved that external electric fields can drive a HgTe quantum well from normal band insulator phase to topological insulator phase [1]. Since the topological edge states are robust against local perturbation, the controlling of edge states using local fields is a challenging task. We demonstrate that a p-n junction created electrically in HgTe quantum wells with inverted band structure exhibits interesting intraband and interband tunneling processes. We find a perfect intraband transmission for electrons injected perpendicularly to the interface of the p-n junction. The opacity and transparency of electrons through the p-n junction can be tuned by changing the incidence angle, the Fermi energy and the strength of the Rashba spin-orbit interaction (RSOI). The occurrence of a conductance plateau due to the formation of topological edge states in a quasi-one-dimensional p-n junction can be switched on and off by tuning the gate voltage. The spin orientation can be substantially rotated when the samples exhibit a moderately strong RSOI [2]. An electrical switching of the edge-state transport can also be realized using quantum point contacts in quantum spin Hall bars. The switch-on/off of the edge channel is caused by the finite size effect of the quantum point contact and therefore can be manipulated by tuning the voltage applied on the split gate [3,4]. The magnetic ions doped on the surface of 3D TI can be correlated through the helical electrons. The RKKY interaction mediated by the helical Dirac electrons consists of the Heisenberg-like, Ising-like, and Dzyaloshinskii-Moriya (DM)-like terms, which can be tuned
Scanning tunneling microscopy studies of topological insulators.
Zhao, Kun; Lv, Yan-Feng; Ji, Shuai-Hua; Ma, Xucun; Chen, Xi; Xue, Qi-Kun
2014-10-01
Scanning tunneling microscopy (STM), with surface sensitivity, is an ideal tool to probe the intriguing properties of the surface state of topological insulators (TIs) and topological crystalline insulators (TCIs). We summarize the recent progress on those topological phases revealed by STM studies. STM observations have directly confirmed the existence of the topological surface states and clearly revealed their novel properties. We also discuss STM work on magnetic doped TIs, topological superconductors and crystalline symmetry-protected surface states in TCIs. The studies have greatly promoted our understanding of the exotic properties of the new topological phases, as well as put forward new challenges. STM will continue to play an important role in this rapidly growing field from the point view of both fundamental physics and applications.
NASA Astrophysics Data System (ADS)
Mross, David F.; Essin, Andrew; Alicea, Jason; Stern, Ady
2016-01-01
We show that boundaries of 3D weak topological insulators can become gapped by strong interactions while preserving all symmetries, leading to Abelian surface topological order. The anomalous nature of weak topological insulator surfaces manifests itself in a nontrivial action of symmetries on the quasiparticles; most strikingly, translations change the anyon types in a manner impossible in strictly 2D systems with the same symmetry. As a further consequence, screw dislocations form non-Abelian defects that trap Z4 parafermion zero modes.
Mross, David F; Essin, Andrew; Alicea, Jason; Stern, Ady
2016-01-22
We show that boundaries of 3D weak topological insulators can become gapped by strong interactions while preserving all symmetries, leading to Abelian surface topological order. The anomalous nature of weak topological insulator surfaces manifests itself in a nontrivial action of symmetries on the quasiparticles; most strikingly, translations change the anyon types in a manner impossible in strictly 2D systems with the same symmetry. As a further consequence, screw dislocations form non-Abelian defects that trap Z_{4} parafermion zero modes.
Topology of nonsymmorphic crystalline insulators and superconductors
NASA Astrophysics Data System (ADS)
Shiozaki, Ken; Sato, Masatoshi; Gomi, Kiyonori
2016-05-01
Topological classification in our previous paper [K. Shiozaki and M. Sato, Phys. Rev. B 90, 165114 (2014), 10.1103/PhysRevB.90.165114] is extended to nonsymmorphic crystalline insulators and superconductors. Using the twisted equivariant K theory, we complete the classification of topological crystalline insulators and superconductors in the presence of additional order-two nonsymmorphic space-group symmetries. The order-two nonsymmorphic space groups include half-lattice translation with Z2 flip, glide, twofold screw, and their magnetic space groups. We find that the topological periodic table shows modulo-2 periodicity in the number of flipped coordinates under the order-two nonsymmorphic space group. It is pointed out that the nonsymmorphic space groups allow Z2 topological phases even in the absence of time-reversal and/or particle-hole symmetries. Furthermore, the coexistence of the nonsymmorphic space group with time-reversal and/or particle-hole symmetries provides novel Z4 topological phases, which have not been realized in ordinary topological insulators and superconductors. We present model Hamiltonians of these new topological phases and analytic expressions of the Z2 and Z4 topological invariants. The half-lattice translation with Z2 spin flip and glide symmetry are compatible with the existence of boundaries, leading to topological surface gapless modes protected by the order-two nonsymmorphic symmetries. We also discuss unique features of these gapless surface modes.
Weak side of strong topological insulators
NASA Astrophysics Data System (ADS)
Sbierski, Björn; Schneider, Martin; Brouwer, Piet W.
2016-04-01
Strong topological insulators may have nonzero weak indices. The nonzero weak indices allow for the existence of topologically protected helical states along line defects of the lattice. If the lattice admits line defects that connect opposite surfaces of a slab of such a "weak-and-strong" topological insulator, these states effectively connect the surface states at opposite surfaces. Depending on the phases accumulated along the dislocation lines, this connection results in a suppression of in-plane transport and the opening of a spectral gap or in an enhanced density of states and an increased conductivity.
Tunable Dirac fermion dynamics in topological insulators.
Chen, Chaoyu; Xie, Zhuojin; Feng, Ya; Yi, Hemian; Liang, Aiji; He, Shaolong; Mou, Daixiang; He, Junfeng; Peng, Yingying; Liu, Xu; Liu, Yan; Zhao, Lin; Liu, Guodong; Dong, Xiaoli; Zhang, Jun; Yu, Li; Wang, Xiaoyang; Peng, Qinjun; Wang, Zhimin; Zhang, Shenjin; Yang, Feng; Chen, Chuangtian; Xu, Zuyan; Zhou, X J
2013-01-01
Three-dimensional topological insulators are characterized by insulating bulk state and metallic surface state involving relativistic Dirac fermions which are responsible for exotic quantum phenomena and potential applications in spintronics and quantum computations. It is essential to understand how the Dirac fermions interact with other electrons, phonons and disorders. Here we report super-high resolution angle-resolved photoemission studies on the Dirac fermion dynamics in the prototypical Bi2(Te,Se)3 topological insulators. We have directly revealed signatures of the electron-phonon coupling and found that the electron-disorder interaction dominates the scattering process. The Dirac fermion dynamics in Bi2(Te3-xSex) topological insulators can be tuned by varying the composition, x, or by controlling the charge carriers. Our findings provide crucial information in understanding and engineering the electron dynamics of the Dirac fermions for fundamental studies and potential applications.
Intrinsic surface dipole in topological insulators.
Fregoso, Benjamin M; Coh, Sinisa
2015-10-28
We calculate the local density of states of two prototypical topological insulators (Bi2Se3 and Bi2Te2Se) as a function of distance from the surface within density functional theory. We find that, in the absence of disorder or doping, there is a 2 nm thick surface dipole the origin of which is the occupation of the topological surface states above the Dirac point. As a consequence, the bottom of the conduction band is bent upward by about 75 meV near the surface, and there is a hump-like feature associated with the top of the valence band. We expect that band bending will occur in all pristine topological insulators as long as the Fermi level does not cross the Dirac point. Our results show that topological insulators are intrinsic Schottky barrier solar cells.
Converting normal insulators into topological insulators via tuning orbital levels
NASA Astrophysics Data System (ADS)
Shi, Wu-Jun; Liu, Junwei; Xu, Yong; Xiong, Shi-Jie; Wu, Jian; Duan, Wenhui
2015-11-01
Tuning the spin-orbit coupling strength via foreign element doping and modifying bonding strength via strain engineering are the major routes to convert normal insulators to topological insulators. We here propose an alternative strategy to realize topological phase transition by tuning the orbital level. Following this strategy, our first-principles calculations demonstrate that a topological phase transition in the cubic perovskite-type compounds CsGeBr3 and CsSnBr3 could be facilitated by carbon substitutional doping. Such a unique topological phase transition predominantly results from the lower orbital energy of the carbon dopant, which can pull down the conduction bands and even induce band inversion. Beyond conventional approaches, our finding of tuning the orbital level may greatly expand the range of topologically nontrivial materials.
Holographic entanglement renormalization of topological insulators
NASA Astrophysics Data System (ADS)
Wen, Xueda; Cho, Gil Young; Lopes, Pedro L. S.; Gu, Yingfei; Qi, Xiao-Liang; Ryu, Shinsei
2016-08-01
We study the real-space entanglement renormalization group flows of topological band insulators in (2+1) dimensions by using the continuum multiscale entanglement renormalization ansatz (cMERA). Given the ground state of a Chern insulator, we construct and study its cMERA by paying attention, in particular, to how the bulk holographic geometry and the Berry curvature depend on the topological properties of the ground state. It is found that each state defined at different energy scale of cMERA carries a nonzero Berry flux, which is emanated from the UV layer of cMERA, and flows towards the IR. Hence, a topologically nontrivial UV state flows under the renormalization group to an IR state, which is also topologically nontrivial. On the other hand, we found that there is an obstruction to construct the exact ground state of a topological insulator with a topologically trivial IR state. That is, if we try to construct a cMERA for the ground state of a Chern insulator by taking a topologically trivial IR state, the resulting cMERA does not faithfully reproduce the exact ground state at all length scales.
Time Reversal Invariant Topologically Insulating Circuit
NASA Astrophysics Data System (ADS)
Jia, Ningyuan; Sommer, Ariel; Schuster, David; Simon, Jonathan
2014-03-01
With the discovery of the quantum hall effect and topological insulators, there has been an outpouring of ideas to harness topologically knotted band-structures in the design of state-of-the art, disorder-insensitive materials. From studies of exotic quantum many- body phenomena to applications in spintronics and quantum information processing, topological materials are poised to revolutionize the condensed matter frontier. Here we demonstrate, for the first time, a circuit that behaves as a time-reversal invariant topological insulator for RF photons. In this meta-material, composed of capacitively coupled high-Q inductors, we observe a gapped density of states consistent with a modified Hofstadter spectrum at a flux per plaquette of phi=pi/2. In-situ probes further reveal time-resolved, spin-dependent edge-transport. We leverage the unique flexibility of our materials to investigate, for the first time, features of topological insulators on manifolds such as the Mobius strip. This new approach elucidates the fundamental ingredients essential to topologically active materials, whilst providing a powerful laboratory to study topological physics and a promising route to topological quantum science.
Topological order in an exactly solvable 3D spin model
Bravyi, Sergey; Leemhuis, Bernhard; Terhal, Barbara M.
2011-04-15
Research highlights: RHtriangle We study exactly solvable spin model with six-qubit nearest neighbor interactions on a 3D face centered cubic lattice. RHtriangle The ground space of the model exhibits topological quantum order. RHtriangle Elementary excitations can be geometrically described as the corners of rectangular-shaped membranes. RHtriangle The ground space can encode 4g qubits where g is the greatest common divisor of the lattice dimensions. RHtriangle Logical operators acting on the encoded qubits are described in terms of closed strings and closed membranes. - Abstract: We study a 3D generalization of the toric code model introduced recently by Chamon. This is an exactly solvable spin model with six-qubit nearest-neighbor interactions on an FCC lattice whose ground space exhibits topological quantum order. The elementary excitations of this model which we call monopoles can be geometrically described as the corners of rectangular-shaped membranes. We prove that the creation of an isolated monopole separated from other monopoles by a distance R requires an operator acting on {Omega}(R{sup 2}) qubits. Composite particles that consist of two monopoles (dipoles) and four monopoles (quadrupoles) can be described as end-points of strings. The peculiar feature of the model is that dipole-type strings are rigid, that is, such strings must be aligned with face-diagonals of the lattice. For periodic boundary conditions the ground space can encode 4g qubits where g is the greatest common divisor of the lattice dimensions. We describe a complete set of logical operators acting on the encoded qubits in terms of closed strings and closed membranes.
The classification of topological insulators and superconductors
NASA Astrophysics Data System (ADS)
Chiu, Ching-Kai; Stone, Michael; Hughes, Taylor
2011-03-01
We use the process of band crossings during quantum phase transitions to explain the periodic table of topological insulators and superconductors. This is achieved by showing how irreducible representations of the real and complex Clifford algebras are related to the 10 Altland-Zirnbauer symmetry classes of Hamiltonian matrices which are associated with time reversal, particle-hole, and chiral symmetries. The representation theory not only reveals why a unique topological invariant (0 ,Z2 , Z) exists for each specific symmetry class and dimension, but also shows the interplay between quantum phase transitions, topologically protected boundary modes, and topological invariants.
Coherent transport of topological insulator surface states
NASA Astrophysics Data System (ADS)
Adroguer, Pierre; Carpentier, David; Orignac, Edmond; Cayssol, Jerome
2012-02-01
Topological insulators (TIs) are a new state of matter recently predicted theoreticallyootnotetextC. L. Kane and E. J. Mele, Phys. Rev. Lett. 95, 226801 (2005).^,ootnotetextX.-L. Qi, T. L. Hughes, and S.-C. Zhang, Phys. Rev. B 78,195424 (2008). and realized experimentally. In 3D they are characterized by the presence of gapless surface states which exhibit a linear dispersion, typical of Dirac fermions. Moreover, contrary to conventionnal materials, these Dirac cones occur in an odd number of Dirac fermions at the surface: ARPES experimentsootnotetextY. Xia, D. Qian, D. Hsieh, L. Wray, A. Pal, H. Lin, A. Bansil, D. Grauer, Y. S. Hor, R. J. Cava, and M. Z. Hasan, Nature Physics 5, 398 (2009).^,ootnotetextY. L. Chen, J. G. Analytis, J.-H. Chu, Z. K. Liu, S.-K. Mo, X.L.Qi,H.J.Zhang,D.H.Lu,X.Dai,Z.Fang,S.C. Zhang, I. R. Fisher, Z. Hussain, and Z.-X. Shen, Science 325, 178 (2009). have found a single Dirac cone at the surface of Bi2Se3, Bi2Te3. This work focuses on the electronic transport properties calculations in the diffusive limite of a single Dirac cone. Specificities of the TI surface states, like the hexagonal warping coupling are taken into account.
Strain-Induced Ferroelectric Topological Insulator.
Liu, Shi; Kim, Youngkuk; Tan, Liang Z; Rappe, Andrew M
2016-03-01
Ferroelectricity and band topology are two extensively studied yet distinct properties of insulators. Nonetheless, their coexistence has never been observed in a single material. Using first-principles calculations, we demonstrate that a noncentrosymmetric perovskite structure of CsPbI3 allows for the simultaneous presence of ferroelectric and topological orders with appropriate strain engineering. Metallic topological surface states create an intrinsic short-circuit condition, helping stabilize bulk polarization. Exploring diverse structural phases of CsPbI3 under pressure, we identify that the key structural feature for achieving a ferroelectric topological insulator is to suppress PbI6 cage rotation in the perovskite structure, which could be obtained via strain engineering. Ferroelectric control over the density of topological surface states provides a new paradigm for device engineering, such as perfect-focusing Veselago lens and spin-selective electron collimator. Our results suggest that CsPbI3 is a simple model system for ferroelectric topological insulators, enabling future studies exploring the interplay between conventional symmetry-breaking and topological orders and their novel applications in electronics and spintronics.
Strain-Induced Ferroelectric Topological Insulator.
Liu, Shi; Kim, Youngkuk; Tan, Liang Z; Rappe, Andrew M
2016-03-01
Ferroelectricity and band topology are two extensively studied yet distinct properties of insulators. Nonetheless, their coexistence has never been observed in a single material. Using first-principles calculations, we demonstrate that a noncentrosymmetric perovskite structure of CsPbI3 allows for the simultaneous presence of ferroelectric and topological orders with appropriate strain engineering. Metallic topological surface states create an intrinsic short-circuit condition, helping stabilize bulk polarization. Exploring diverse structural phases of CsPbI3 under pressure, we identify that the key structural feature for achieving a ferroelectric topological insulator is to suppress PbI6 cage rotation in the perovskite structure, which could be obtained via strain engineering. Ferroelectric control over the density of topological surface states provides a new paradigm for device engineering, such as perfect-focusing Veselago lens and spin-selective electron collimator. Our results suggest that CsPbI3 is a simple model system for ferroelectric topological insulators, enabling future studies exploring the interplay between conventional symmetry-breaking and topological orders and their novel applications in electronics and spintronics. PMID:26814668
Topological Insulator Realized with Piezoelectric Resonators
NASA Astrophysics Data System (ADS)
McHugh, S.
2016-07-01
We propose a realization of a two-dimensional topological insulator using an array of microwave piezoelectric resonators. The resonators are coupled electrically, but acoustically isolated. The inter-resonator electromagnetic coupling required to reproduce an effective mechanical topological insulator is found explicitly. Both the acoustic and electric response show the essential features of topological insulator, e.g., helical edge states. The helical edge states may be useful for engineering nonreciprocal electronic devices like isolators and circulators. These components do not often appear in the radios of modern mobile phones since they traditionally require bulky magnetic material. However, a nonreciprocal device based on piezoelectric resonators may meet the demands of phone manufacturers due to their small size, high-linearity, and ease of fabrication.
Dynamical gap generation in topological insulators
NASA Astrophysics Data System (ADS)
Cea, Paolo
2016-04-01
We developed a quantum field theoretical description for the surface states of three-dimensional topological insulators. Within the relativistic quantum field theory formulation, we investigated the dynamics of low-lying surface states in an applied transverse magnetic field. We argued that, by taking into account quantum fluctuations, in three-dimensional topological insulators there is dynamical generation of a gap by a rearrangement of the Dirac sea. By comparing with available experimental data we found that our theoretical results allowed a consistent and coherent description of the Landau level spectrum of the surface low-lying excitations. Finally, we showed that the recently detected zero-Hall plateau at the charge neutral point could be accounted for by chiral edge states residing at the magnetic domain boundaries between the top and bottom surfaces of the three-dimensional topological insulator.
Surface plasmons in doped topological insulators
NASA Astrophysics Data System (ADS)
Schütky, Robert; Ertler, Christian; Trügler, Andreas; Hohenester, Ulrich
2013-11-01
We investigate surface plasmons at a planar interface between a normal dielectric and a topological insulator, where the Fermi energy lies inside the bulk gap of the topological insulator and gives rise to a two-dimensional charge distribution of free Dirac electrons. We develop the methodology for the calculation of plasmon dispersions using the framework of classical electrodynamics, with modified constituent equations due to Hall currents in the topological insulator, together with a Lindhard-type description for the two-dimensional charge distribution of free Dirac electrons. For a system representative for Bi2X3 binary compounds, we find in agreement with recent related work that the modified constituent equations have practically no impact on the surface plasmon dispersion but lead to a rotation of the magnetic polarization of surface plasmons out of the interface plane.
The winding road to topological insulators
NASA Astrophysics Data System (ADS)
Mele, Eugene J.
2015-12-01
This note gives a brief discussion of the discovery of topological insulators from a consideration of the low energy properties of single layer graphene. Topological band theoretic classification of insulating states in two and three-dimensions and experimental realizations are briefly discussed. Note to readers: This is a short summary of a talk that was given at the Nobel Symposium ‘New Forms of Matter: Topological Insulators and Superconductors’ held in Stockholm in June 2014. The talk was in the spirit of an overview talk but focusing on the background and early history of the field rather than reviewing the substantial (and growing) technical literature on the subject. Readers interested in technical details will surely be disappointed and should read no further, but others may be interested in some of the developments recounted here.
A quantum dot in topological insulator nanofilm.
Herath, Thakshila M; Hewageegana, Prabath; Apalkov, Vadym
2014-03-19
We introduce a quantum dot in topological insulator nanofilm as a bump at the surface of the nanofilm. Such a quantum dot can localize an electron if the size of the dot is large enough, ≳5 nm. The quantum dot in topological insulator nanofilm has states of two types, which belong to two ('conduction' and 'valence') bands of the topological insulator nanofilm. We study the energy spectra of such defined quantum dots. We also consider intraband and interband optical transitions within the dot. The optical transitions of the two types have the same selection rules. While the interband absorption spectra have multi-peak structure, each of the intraband spectra has one strong peak and a few weak high frequency satellites.
Disordered weak and strong topological insulators.
Kobayashi, Koji; Ohtsuki, Tomi; Imura, Ken-Ichiro
2013-06-01
A global phase diagram of disordered weak and strong topological insulators is established numerically. As expected, the location of the phase boundaries is renormalized by disorder, a feature recognized in the study of the so-called topological Anderson insulator. Here, we report unexpected quantization, i.e., robustness against disorder of the conductance peaks on these phase boundaries. Another highlight of the work is on the emergence of two subregions in the weak topological insulator phase under disorder. According to the size dependence of the conductance, the surface states are either robust or "defeated" in the two subregions. The nature of the two distinct types of behavior is further revealed by studying the Lyapunov exponents.
Plutonium hexaboride is a correlated topological insulator
NASA Astrophysics Data System (ADS)
Deng, Xiaoyu; Haule, Kristjan; Kotliar, Gabriel; Department of Physics and Astronomy, Rutgers University Team
2014-03-01
We predict that plutonium hexaboride (PuB6) is a strongly correlated topological insulator, with Pu in an intermediate valence state of Pu2 . 7 +. Within the combination of dynamical mean field theory and density functional theory, we show that PuB6 is an insulator in the bulk, with non-trivial Z2 topological invariants. Its metallic surface states have large Fermi pocket at X point and the Dirac cones inside the bulk derived electronic states causing a large surface thermal conductivity. PB6 has also a very high melting temperature therefore it has ideal solid state properties for a nuclear fuel material.
D-algebra structure of topological insulators
NASA Astrophysics Data System (ADS)
Estienne, B.; Regnault, N.; Bernevig, B. A.
2012-12-01
In the quantum Hall effect, the density operators at different wave vectors generally do not commute and give rise to the Girvin-MacDonald-Plazmann (GMP) algebra, with important consequences such as ground-state center-of-mass degeneracy at fractional filling fraction, and W1+∞ symmetry of the filled Landau levels. We show that the natural generalization of the GMP algebra to higher-dimensional topological insulators involves the concept of a D commutator. For insulators in even-dimensional space, the D commutator is isotropic and closes, and its structure factors are proportional to the D/2 Chern number. In odd dimensions, the algebra is not isotropic, contains the weak topological insulator index (layers of the topological insulator in one fewer dimension), and does not contain the Chern-Simons θ form. This algebraic structure paves the way towards the identification of fractional topological insulators through the counting of their excitations. The possible relation to D-dimensional volume-preserving diffeomorphisms and parallel transport of extended objects is also discussed.
Status of surface conduction in topological insulators
Barua, Sourabh Rajeev, K. P.
2014-01-15
In this report, we scrutinize the thickness dependent resistivity data from the recent literature on electrical transport measurements in topological insulators. A linear increase in resistivity with increase in thickness is expected in the case of these materials since they have an insulating bulk and a conducting surface. However, such a trend is not seen in the resistivity versus thickness data for all the cases examined, except for some samples, where it holds for a range of thickness.
Topological phases of a three-dimensional topological insulator with structure inversion asymmetry
NASA Astrophysics Data System (ADS)
Guo, Xiaoyong; Wang, Zaijun; Zheng, Qiang; Peng, Jie
2015-11-01
We investigate the topological phases of a three-dimensional (3D) topological insulator (TI) without the top-bottom inversion symmetry. We calculate the momentum depended spin Chern number to extract the phase diagram. Various phases are found and we address the dependence of phase boundaries on the strength of inversion asymmetry. Opposite to the quasi-two-dimensional thin film TI, in our 3D system the TI state is stabilized by the structure inversion asymmetry (SIA). With a strong SIA the 3D TI phase can exist even under a large Zeeman field. In a tight-binding form, the surface modes are discussed to confirm with the phase diagram. Particularly we find that the SIA cannot destroy the surface states but open a gap on its spectrum.
Classification of interacting electronic topological insulators in three dimensions.
Wang, Chong; Potter, Andrew C; Senthil, T
2014-02-01
A fundamental open problem in condensed-matter physics is how the dichotomy between conventional and topological band insulators is modified in the presence of strong electron interactions. We show that there are six interacting electronic topological insulators that have no noninteracting counterpart. Combined with the previously known band insulators, these produce a total of eight topologically distinct phases. Two of the six interacting topological insulators can be described as Mott insulators in which the electron spins form spin analogs of the topological band insulator. The remaining phases are obtained as combinations of these two "topological paramagnets" and the topological band insulator. We prove that these eight phases form a complete list of all possible interacting topological insulators and discuss their experimental signatures.
NASA Astrophysics Data System (ADS)
Xing, Xu-Feng; Abolfazl Mostafavia, Mir; Wang, Chen
2016-06-01
Topological relations are fundamental for qualitative description, querying and analysis of a 3D scene. Although topological relations for 2D objects have been extensively studied and implemented in GIS applications, their direct extension to 3D is very challenging and they cannot be directly applied to represent relations between components of complex 3D objects represented by 3D B-Rep models in R3. Herein we present an extended Region Connection Calculus (RCC) model to express and formalize topological relations between planar regions for creating 3D model represented by Boundary Representation model in R3. We proposed a new dimension extended 9-Intersection model to represent the basic relations among components of a complex object, including disjoint, meet and intersect. The last element in 3*3 matrix records the details of connection through the common parts of two regions and the intersecting line of two planes. Additionally, this model can deal with the case of planar regions with holes. Finally, the geometric information is transformed into a list of strings consisting of topological relations between two planar regions and detailed connection information. The experiments show that the proposed approach helps to identify topological relations of planar segments of point cloud automatically.
Band structure engineering in topological insulator based heterostructures.
Menshchikova, T V; Otrokov, M M; Tsirkin, S S; Samorokov, D A; Bebneva, V V; Ernst, A; Kuznetsov, V M; Chulkov, E V
2013-01-01
The ability to engineer an electronic band structure of topological insulators would allow the production of topological materials with tailor-made properties. Using ab initio calculations, we show a promising way to control the conducting surface state in topological insulator based heterostructures representing an insulator ultrathin films on the topological insulator substrates. Because of a specific relation between work functions and band gaps of the topological insulator substrate and the insulator ultrathin film overlayer, a sizable shift of the Dirac point occurs resulting in a significant increase in the number of the topological surface state charge carriers as compared to that of the substrate itself. Such an effect can also be realized by applying the external electric field that allows a gradual tuning of the topological surface state. A simultaneous use of both approaches makes it possible to obtain a topological insulator based heterostructure with a highly tunable topological surface state.
Durand, Corentin; Zhang, X-G; Hus, Saban M; Ma, Chuanxu; McGuire, Michael A; Xu, Yang; Cao, Helin; Miotkowski, Ireneusz; Chen, Yong P; Li, An-Ping
2016-04-13
We show a new method to differentiate conductivities from the surface states and the coexisting bulk states in topological insulators using a four-probe transport spectroscopy in a multiprobe scanning tunneling microscopy system. We derive a scaling relation of measured resistance with respect to varying interprobe spacing for two interconnected conduction channels to allow quantitative determination of conductivities from both channels. Using this method, we demonstrate the separation of 2D and 3D conduction in topological insulators by comparing the conductance scaling of Bi2Se3, Bi2Te2Se, and Sb-doped Bi2Se3 against a pure 2D conductance of graphene on SiC substrate. We also quantitatively show the effect of surface doping carriers on the 2D conductance enhancement in topological insulators. The method offers a means to understanding not just the topological insulators but also the 2D to 3D crossover of conductance in other complex systems.
Low-Dimensional Topological Crystalline Insulators.
Wang, Qisheng; Wang, Feng; Li, Jie; Wang, Zhenxing; Zhan, Xueying; He, Jun
2015-09-01
Topological crystalline insulators (TCIs) are recently discovered topological phase with robust surface states residing on high-symmetry crystal surfaces. Different from conventional topological insulators (TIs), protection of surface states on TCIs comes from point-group symmetry instead of time-reversal symmetry in TIs. The distinct properties of TCIs make them promising candidates for the use in novel spintronics, low-dissipation quantum computation, tunable pressure sensor, mid-infrared detector, and thermoelectric conversion. However, similar to the situation in TIs, the surface states are always suppressed by bulk carriers, impeding the exploitation of topology-induced quantum phenomenon. One effective way to solve this problem is to grow low-dimensional TCIs which possess large surface-to-volume ratio, and thus profoundly increase the carrier contribution from topological surface states. Indeed, through persistent effort, researchers have obtained unique quantum transport phenomenon, originating from topological surface states, based on controllable growth of low-dimensional TCIs. This article gives a comprehensive review on the recent progress of controllable synthesis and topological surface transport of low-dimensional TCIs. The possible future direction about low-dimensional TCIs is also briefly discussed at the end of this paper.
Scattering matrix invariants of Floquet topological insulators
NASA Astrophysics Data System (ADS)
Fulga, I. C.; Maksymenko, M.
2016-02-01
Similar to static systems, periodically driven systems can host a variety of topologically nontrivial phases. Unlike the case of static Hamiltonians, the topological indices of bulk Floquet bands may fail to describe the presence and robustness of edge states, prompting the search for new invariants. We develop a unified description of topological phases and their invariants in driven systems by using scattering theory. We show that scattering matrix invariants correctly describe the topological phase, even when all bulk Floquet bands are trivial. Additionally, we use scattering theory to introduce and analyze new periodically driven phases, such as weak topological Floquet insulators, for which invariants were previously unknown. We highlight some of their similarities with static systems, including robustness to disorder, as well as some of the features unique to driven systems, showing that the weak phase may be destroyed by breaking translational symmetry not in space, but in time.
Theory of the topological anderson insulator.
Groth, C W; Wimmer, M; Akhmerov, A R; Tworzydło, J; Beenakker, C W J
2009-11-01
We present an effective medium theory that explains the disorder-induced transition into a phase of quantized conductance, discovered in computer simulations of HgTe quantum wells. It is the combination of a random potential and quadratic corrections proportional to p2 sigma(z) to the Dirac Hamiltonian that can drive an ordinary band insulator into a topological insulator (having an inverted band gap). We calculate the location of the phase boundary at weak disorder and show that it corresponds to the crossing of a band edge rather than a mobility edge. Our mechanism for the formation of a topological Anderson insulator is generic, and would apply as well to three-dimensional semiconductors with strong spin-orbit coupling.
Topological insulator-based energy efficient devices
NASA Astrophysics Data System (ADS)
Chen, Yong P.
2012-06-01
Topological insulators (TI) have emerged as a new class of quantum materials with many novel and unusual properties. In this article, we will give a brief review of the key electronic properties of topological insulators, including the signatures for the unusual electronic transport properties of their characteristic topological surface states (TSS). We will then discuss how these novel properties and physics may be utilized for TI-based energy efficient devices, such as lowpower- consumption electronics and high performance thermo-electrics. Furthermore, going beyond conventional singleparticle, charge-based transport, to utilize coherent many-body coherent ground states such as excitonic condensates (EC), new and intriguing functionalities previously unexplored in electronic and energy devices may be realized with the potential to dramatically improve the energy efficiency.
Fractional topological insulators in three dimensions.
Maciejko, Joseph; Qi, Xiao-Liang; Karch, Andreas; Zhang, Shou-Cheng
2010-12-10
Topological insulators can be generally defined by a topological field theory with an axion angle θ of 0 or π. In this work, we introduce the concept of fractional topological insulator defined by a fractional axion angle and show that it can be consistent with time reversal T invariance if ground state degeneracies are present. The fractional axion angle can be measured experimentally by the quantized fractional bulk magnetoelectric polarization P₃, and a "halved" fractional quantum Hall effect on the surface with Hall conductance of the form σH=p/q e²/2h with p, q odd. In the simplest of these states the electron behaves as a bound state of three fractionally charged "quarks" coupled to a deconfined non-Abelian SU(3) "color" gauge field, where the fractional charge of the quarks changes the quantization condition of P₃ and allows fractional values consistent with T invariance.
Equivalence of topological insulators and superconductors
NASA Astrophysics Data System (ADS)
Ortiz, Gerardo; Cobanera, Emilio
Systems of free fermions are classified by symmetry, space dimensionality, and topological properties described by K-homology. We show that by taking a many-body/Fock space viewpoint it becomes possible to establish equivalences of topological insulators and superconductors in terms of duality transformations. These mappings connect topologically inequivalent systems of fermions, jumping across entries in existent classification tables, because of the phenomenon of symmetry transmutation by which a symmetry and its dual partner have identical algebraic properties but very different physical interpretations and electromagnetic response. Since our analysis extends to interacting fermion systems we also briefly discuss some such applications. To illustrate main concepts we will present dual superconducting partners of paradigmatic models, such as the Haldane Chern insulator as well as a quantum spin Hall effect graphene model.
Room Temperature Giant and Linear Magnetoresistance in Topological Insulator Bi2Te3 Nanosheets
NASA Astrophysics Data System (ADS)
Wang, Xiaolin; Du, Yi; Dou, Shixue; Zhang, Chao
2012-06-01
Topological insulators, a new class of condensed matter having bulk insulating states and gapless metallic surface states, have demonstrated fascinating quantum effects. However, the potential practical applications of the topological insulators are still under exploration worldwide. We demonstrate that nanosheets of a Bi2Te3 topological insulator several quintuple layers thick display giant and linear magnetoresistance. The giant and linear magnetoresistance achieved is as high as over 600% at room temperature, with a trend towards further increase at higher temperatures, as well as being weakly temperature-dependent and linear with the field, without any sign of saturation at measured fields up to 13 T. Furthermore, we observed a magnetic field induced gap below 10 K. The observation of giant and linear magnetoresistance paves the way for 3D topological insulators to be useful for practical applications in magnetoelectronic sensors such as disk reading heads, mechatronics, and other multifunctional electromagnetic applications.
Room temperature giant and linear magnetoresistance in topological insulator Bi2Te3 nanosheets.
Wang, Xiaolin; Du, Yi; Dou, Shixue; Zhang, Chao
2012-06-29
Topological insulators, a new class of condensed matter having bulk insulating states and gapless metallic surface states, have demonstrated fascinating quantum effects. However, the potential practical applications of the topological insulators are still under exploration worldwide. We demonstrate that nanosheets of a Bi(2)Te(3) topological insulator several quintuple layers thick display giant and linear magnetoresistance. The giant and linear magnetoresistance achieved is as high as over 600% at room temperature, with a trend towards further increase at higher temperatures, as well as being weakly temperature-dependent and linear with the field, without any sign of saturation at measured fields up to 13 T. Furthermore, we observed a magnetic field induced gap below 10 K. The observation of giant and linear magnetoresistance paves the way for 3D topological insulators to be useful for practical applications in magnetoelectronic sensors such as disk reading heads, mechatronics, and other multifunctional electromagnetic applications.
Proximity effects in a topological-insulator/Mott-insulator heterostructure
NASA Astrophysics Data System (ADS)
Ueda, Suguru; Kawakami, Norio; Sigrist, Manfred
2013-04-01
We investigate proximity effects in a correlated heterostructure of a two-dimensional Mott insulator (MI) and a topological insulator (TI) by employing inhomogeneous dynamical mean-field theory. We show that the edge state of the TI induces strongly renormalized midgap states inside the MI region, which still have a remnant of the helical energy spectrum. The penetration of low-energy electrons, which is controlled by the interface tunneling V, largely enhances the electron mass inside the MI and also splits a single Dirac cone at edge sites into the spatially separated two Dirac cones in the strong V region.
Superconductivity and ferromagnetism in topological insulators
NASA Astrophysics Data System (ADS)
Zhang, Duming
Topological insulators, a new state of matter discovered recently, have attracted great interest due to their novel properties. They are insulating inside the bulk, but conducting at the surface or edges. This peculiar behavior is characterized by an insulating bulk energy gap and gapless surface or edge states, which originate from strong spin-orbit coupling and time-reversal symmetry. The spin and momentum locked surface states not only provide a model system to study fundamental physics, but can also lead to applications in spintronics and dissipationless electronics. While topological insulators are interesting by themselves, more exotic behaviors are predicted when an energy gap is induced at the surface. This dissertation explores two types of surface state gap in topological insulators, a superconducting gap induced by proximity effect and a magnetic gap induced by chemical doping. The first three chapters provide introductory theory and experimental details of my research. Chapter 1 provides a brief introduction to the theoretical background of topological insulators. Chapter 2 is dedicated to material synthesis principles and techniques. I will focus on two major synthesis methods: molecular beam epitaxy for the growth of Bi2Se3 thin films and chemical vapor deposition for the growth of Bi2Se3 nanoribbons and nanowires. Material characterization is discussed in Chapter 3. I will describe structural, morphological, magnetic, electrical, and electronic characterization techniques used to study topological insulators. Chapter 4 discusses the experiments on proximity-induced superconductivity in topological insulator (Bi2Se3) nanoribbons. This work is motivated by the search for the elusive Majorana fermions, which act as their own antiparticles. They were proposed by Ettore Majorara in 1937, but have remained undiscovered. Recently, Majorana's concept has been revived in condensed matter physics: a condensed matter analog of Majorana fermions is predicted to
Charge puddles in a completely compensated topological insulator
NASA Astrophysics Data System (ADS)
Rischau, C. W.; Ubaldini, A.; Giannini, E.; van der Beek, C. J.
2016-07-01
Compensation of intrinsic charges is widely used to reduce the bulk conductivity of 3D topological insulators (TIs). Here we use low temperature electron irradiation-induced defects paired with in situ electrical transport measurements to fine-tune the degree of compensation in Bi2Te3. The coexistence of electrons and holes at the point of optimal compensation can only be explained by bulk carriers forming charge puddles. These need to be considered to understand the electric transport in compensated TI samples, irrespective of the method of compensation.
Contribution of Topological Domains and Loop Formation to 3D Chromatin Organization
Ea, Vuthy; Baudement, Marie-Odile; Lesne, Annick; Forné, Thierry
2015-01-01
Recent investigations on 3D chromatin folding revealed that the eukaryote genomes are both highly compartmentalized and extremely dynamic. This review presents the most recent advances in topological domains’ organization of the eukaryote genomes and discusses the relationship to chromatin loop formation. CTCF protein appears as a central factor of these two organization levels having either a strong insulating role at TAD borders, or a weaker architectural role in chromatin loop formation. TAD borders directly impact on chromatin dynamics by restricting contacts within specific genomic portions thus confining chromatin loop formation within TADs. We discuss how sub-TAD chromatin dynamics, constrained into a recently described statistical helix conformation, can produce functional interactions by contact stabilization. PMID:26226004
Contribution of Topological Domains and Loop Formation to 3D Chromatin Organization.
Ea, Vuthy; Baudement, Marie-Odile; Lesne, Annick; Forné, Thierry
2015-01-01
Recent investigations on 3D chromatin folding revealed that the eukaryote genomes are both highly compartmentalized and extremely dynamic. This review presents the most recent advances in topological domains' organization of the eukaryote genomes and discusses the relationship to chromatin loop formation. CTCF protein appears as a central factor of these two organization levels having either a strong insulating role at TAD borders, or a weaker architectural role in chromatin loop formation. TAD borders directly impact on chromatin dynamics by restricting contacts within specific genomic portions thus confining chromatin loop formation within TADs. We discuss how sub-TAD chromatin dynamics, constrained into a recently described statistical helix conformation, can produce functional interactions by contact stabilization. PMID:26226004
Non-commutative tools for topological insulators
NASA Astrophysics Data System (ADS)
Prodan, Emil
2010-06-01
This paper reviews several analytic tools for the field of topological insulators, developed with the aid of non-commutative calculus and geometry. The set of tools includes bulk topological invariants defined directly in the thermodynamic limit and in the presence of disorder, whose robustness is shown to have nontrivial physical consequences for the bulk states. The set of tools also includes a general relation between the current of an observable and its edge index, a relation that can be used to investigate the robustness of the edge states against disorder. The paper focuses on the motivations behind creating such tools and on how to use them.
Helical Luttinger liquid in topological insulator nanowires.
Egger, R; Zazunov, A; Yeyati, A Levy
2010-09-24
We derive and analyze the effective low-energy theory for interacting electrons in a cylindrical nanowire made of a strong topological insulator. Three different approaches provide a consistent picture for the band structure, where surface states forming inside the bulk gap correspond to one-dimensional bands indexed by total angular momentum. When a half-integer magnetic flux pierces the nanowire, we find a strongly correlated helical Luttinger liquid topologically protected against weak disorder. We describe how transport experiments can detect this state.
Coupled-layer description of topological crystalline insulators
NASA Astrophysics Data System (ADS)
Fulga, I. C.; Avraham, N.; Beidenkopf, H.; Stern, A.
2016-09-01
We introduce a coupled-layer construction to describe three-dimensional topological crystalline insulators protected by reflection symmetry. Our approach uses stacks of weakly coupled two-dimensional Chern insulators to produce topological crystalline insulators in one higher dimension, with tunable number and location of surface Dirac cones. As an application of our formalism, we turn to a simplified model of topological crystalline insulator SnTe, showing that its protected surface states can be described using the coupled-layer construction.
Junction between surfaces of two topological insulators
NASA Astrophysics Data System (ADS)
Sen, Diptiman; Deb, Oindrila
2012-02-01
We study scattering from a line junction which separates the surfaces of two three-dimensional topological insulators; some aspects of this problem were recently studied in Takahashi and Murakami, Phys. Rev. Lett. 107, 166805 (2011). The velocities of the Dirac electrons on the two surfaces may be unequal and may even have opposite signs; in the latter case, we find that the electrons must, in general, go into the two-dimensional interface separating the two topological insulators. We also study what happens if the two surfaces are at an angle φ with respect to each other. We find in this case that there are bound states which propagate along the line junction with a velocity and direction of spin which depend on the bending angle φ.
Quantum Transport of Spin-helical Dirac Fermion Topological Surface States in Topological Insulators
NASA Astrophysics Data System (ADS)
Chen, Yong P.
Three-dimensional (3D) topological insulators (TI) are a novel class of electronic materials with topologically-nontrivial band structure such that the bulk is gapped and insulating yet the surface has topologically protected gapless conducting states. Such ``topological surface states'' (TSS) give helically spin polarized Dirac fermions, and offer a promising platform to realize various other novel physics such as topological magnetoelectric effects and Majorana fermions. However, it is often challenging to unambiguously access and study the transport properties of TSS in many practical TI materials due to non-negligible bulk conducting states. I will discuss our recent experiments on high-quality ``intrinsic'' TIs with insulating bulk and surface-dominated conduction that allow us to reveal a number of characteristic transport properties of spin-helical Dirac fermion topological surface states. We have observed, for example, a thickness-independent and surface-dominated conductance (even at room temperature) in exfoliated TI thin films and well-developed ``half-integer'' Dirac fermion quantum Hall effect (QHE) arising from TSS (observed up to 40K); fully-tunable ``two-species'' Dirac fermion QHE and other intriguing states in dual gated devices where both top and bottom surfaces can be independently controlled; current-induced helical spin-polarization detected by spin sensitive transport measurements using magnetic electrodes; and in TI nanoribbons, Shubnikov-de Hass (SdH) oscillations showing gate-tunable Berry phase and ultra-relativistic Dirac mass; and a ``half-integer'' Aharonov-Bohm effect (ABE) unique to the circumferentially quantized spin helical Dirac fermion surface state modes (sub-bands), with a gate-tunable conductance oscillation and alternation between the ``half-integer'' ABE and regular ABE periodic in fermi momentum. Such TIs and related devices may enable promising future applications in spintronics, thermoelectrics and various topological
Topological insulator nanostructures and devices
NASA Astrophysics Data System (ADS)
Alegria, Loren D.
We present a series of experiments developing the compounds Bi2 Te3, Bi2Se3, and Bi2Te 2Se for nanoscale device applications. New metal organic chemical vapor deposition techniques are employed to make high quality mesoscopic samples, focusing on the growth of nanowires and nanotubes with controlled structure and composition. Fundamental properties of nanowires are studied via transmission electron microscopy and magnetotransport experiments at low temperatures. We describe a method for promoting the self-assembly of pristine nanotubes of Bi2Te3, which have not been observed before. Finally, we demonstrate a method of introducing ferromagnetism precisely at the Bi 2Te3 surface by developing the epitaxy of Bi2Te 3 on the ferromagnetic insulator Cr2Ge2Te 6 and we study the hall effect in these new heterostructures at low temperature. Our results are promising for the development of advanced thermoelectric, optoelectronic, or magnetoresistive devices based on the unique properties of these materials, as well as for the realization of new states of matter, such as the quantum anomalous hall state and Majorana fermion states in heavy element nanowires.
Inelastic electron tunneling spectroscopy for topological insulators.
She, Jian-Huang; Fransson, Jonas; Bishop, A R; Balatsky, Alexander V
2013-01-11
Inelastic electron tunneling spectroscopy is a powerful spectroscopy that allows one to investigate the nature of local excitations and energy transfer in the system of interest. We study inelastic electron tunneling spectroscopy for topological insulators and investigate the role of inelastic scattering on the Dirac node states on the surface of topological insulators. Local inelastic scattering is shown to significantly modify the Dirac node spectrum. In the weak coupling limit, peaks and steps are induced in second derivative d2I/dV2. In the strong coupling limit, the local negative-U centers are formed at impurity sites, and the Dirac cone structure is fully destroyed locally. At intermediate coupling, resonance peaks emerge. We map out the evolution of the resonance peaks from weak to strong coupling, which interpolate nicely between the two limits. There is a sudden qualitative change of behavior at intermediate coupling, indicating the possible existence of a local quantum phase transition. We also find that, even for a simple local phonon mode, the inherent coupling of spin and orbital degrees in topological insulators leads to the spin-polarized texture in inelastic Friedel oscillations induced by the local mode.
Visualizing Helical Metals on Topological Insulators
NASA Astrophysics Data System (ADS)
Yazdani, Ali
2012-02-01
During the last few years, it has become apparent that there can be a distinct type of insulator, which can occur because of the topology of electronic wavefunctions in materials comprised of heavier elements. Strong interaction between the spin and the orbital angular momentum of electrons in these compounds alters the sequence in energy of their electronic states. The key consequence of this topological characteristic (and the way to distinguish a topological insulator from an ordinary one) is the presence of metallic electrons with helical spin texture at their surfaces. I will describe experiments that directly visualize these novel quantum states of matter and demonstrate their unusual properties through spectroscopic mapping with the scanning tunneling microscope (STM). These experiments show that the spin texture of these states protects them against backscattering and localization. These states appear to penetrate through barriers that stop other electronic states. I will also describe more ongoing efforts focused on unraveling the physics of topological surface states and their potential for device-like applications. [4pt] References: [0pt] P. Roushan et al, Nature 460 1106 (2009). [0pt] J. Seo et al, Nature 466 343 (2010). [0pt] H. Beidenkopf et al, to appear Nature Physics (2011).
Interacting weak topological insulators and their transition to Dirac semimetal phases
NASA Astrophysics Data System (ADS)
Sangiovanni, Giorgio; Hanke, Werner; Li, Gang; Trauzettel, Bjoern
Topological insulators in the presence of strong Coulomb interaction constitute novel phases of matter. Transitions between these phases can be driven by single-particle or many-body effects. On the basis of ab-initio calculations, we identify a concrete material, i.e. Ca2PtO4, that turns out to be a hole-doped weak topological insulator. Interestingly, the Pt- d orbitals in this material are relevant for the band inversion that gives rise to the topological phase. Therefore, Coulomb interaction should be of importance in Ca2PtO4. To study the influence of interactions on the weak topological insulating phase, we look at a toy model corresponding to a layer-stacked 3D version of the Bernevig-Hughes-Zhang model with local interactions. For small to intermediate interaction strength, we discover novel interaction-driven topological phase transitions between the weak topological insulator and two Dirac semimetal phases. The latter correspond to gapless topological phases. For strong interactions, the system eventually becomes a Mott insulator. DFG Grant No. Ha 1537/23-1 within the Forschergruppe FOR 1162, SPP Grant Ha 1537/24-2, SFB 1170 ``ToCoTronics'', SPP 1666, the Helmholtz Foundation (VITI), the ``Elitenetzwerk Bayern'' (ENB graduate school on ``Topological insulators'').
Three-dimensional topological insulators on the pyrochlore lattice.
Guo, H-M; Franz, M
2009-11-13
Electrons hopping on the sites of a three-dimensional pyrochlore lattice are shown to form topologically nontrivial insulating phases when the spin-orbit (SO) coupling and lattice distortions are present. Of 16 possible topological classes 9 are realized for various parameters in this model. Specifically, at half-filling an undistorted pyrochlore lattice with a SO term yields a "pristine" strong topological insulator with a Z(2) index (1;000). At quarter filling various strong and weak topological phases are obtained provided that both SO coupling and uniaxial lattice distortion are present. Our analysis suggests that many of the nonmagnetic insulating pyrochlores could be topological insulators.
Classification of Topological Insulators and Superconductors: the ``Ten-Fold Way''
NASA Astrophysics Data System (ADS)
Ludwig, Andreas
2011-03-01
We review the exhaustive ten-fold classification scheme of topological insulators and superconductors. It is found that the conventional (i.e.: ``Z2 '', or `spin-orbit') topological insulator, experimentally observed in 2D (`Quantum Spin Hall') and in 3D materials, is one of a total of five possible classes of topological insulators or superconductors which exist in every dimension of space. Different topological sectors within a given class can be labeled, depending on the case, by an integer winding number, or by a ``binary'' Z2 quantity. The topological nature of the bulk manifests itself through the appearance of ``topologically protected'' surface states. These surface states completely evade the phenomenon of Anderson localization due to disorder. Examples of the additional topological phases in 3D include topological superconductors (i) with spin-singlet pairing, and (ii) with spin-orbit interactions, as well as 3 He B . -- The classification of topological insulators (superconductors) in d dimensions is reduced to the problem of classifying Anderson localization at the (d-1)-dimensional sample boundary which, in turn, is solved. The resulting five symmetry classes of topological insulators (superconductors) found to exist in every dimension of space correspond to a certain subset of five of the ten generic symmetry classes of Hamiltonians introduced 16 years ago by Altland and Zirnbauer in the context of disordered systems (generalizing the three well-known ``Wigner-Dyson'' symmetry classes). For a significant part of the phases of topological insulators (superconductors) of the classification a characterization can be given in terms of the responses of the system. For these, the responses are described by a field theory possessing a [gauge, gravitational (thermal), or mixed] anomaly. This implies that these phases are well defined also in the presence of inter-fermion interactions. Work done in collaboration with S. Ryu, A. Schnyder, A. Furusaki, and with
Mross, David F; Essin, Andrew; Alicea, Jason; Stern, Ady
2016-01-22
We show that boundaries of 3D weak topological insulators can become gapped by strong interactions while preserving all symmetries, leading to Abelian surface topological order. The anomalous nature of weak topological insulator surfaces manifests itself in a nontrivial action of symmetries on the quasiparticles; most strikingly, translations change the anyon types in a manner impossible in strictly 2D systems with the same symmetry. As a further consequence, screw dislocations form non-Abelian defects that trap Z_{4} parafermion zero modes. PMID:26849608
Achieving High-Temperature Ferromagnetic Topological Insulator
NASA Astrophysics Data System (ADS)
Katmis, Ferhat
Topological insulators (TIs) are insulating materials that display conducting surface states protected by time-reversal symmetry, wherein electron spins are locked to their momentum. This unique property opens new opportunities for creating next-generation electronic and spintronic devices, including TI-based quantum computation. Introducing ferromagnetic order into a TI system without compromising its distinctive quantum coherent features could lead to a realization of several predicted novel physical phenomena. In particular, achieving robust long-range magnetic order at the TI surface at specific locations without introducing spin scattering centers could open up new possibilities for devices. Here, we demonstrate topologically enhanced interface magnetism by coupling a ferromagnetic insulator (FMI) to a TI (Bi2Se3); this interfacial ferromagnetism persists up to room temperature, even though the FMI (EuS) is known to order ferromagnetically only at low temperatures (<17 K). The induced magnetism at the interface resulting from the large spin-orbit interaction and spin-momentum locking feature of the TI surface is found to greatly enhance the magnetic ordering (Curie) temperature of the TI/FMI bilayer system. Due to the short range nature of the ferromagnetic exchange interaction, the time-reversal symmetry is broken only near the surface of a TI, while leaving its bulk states unaffected. The topological magneto-electric response originating in such an engineered TI could allow for an efficient manipulation of the magnetization dynamics by an electric field, providing an energy efficient topological control mechanism for future spin-based technologies. Work supported by MIT MRSEC through the MRSEC Program of NSF under award number DMR-0819762, NSF Grant DMR-1207469, the ONR Grant N00014-13-1-0301, and the STC Center for Integrated Quantum Materials under NSF grant DMR-1231319.
NASA Astrophysics Data System (ADS)
Men'shov, V. N.; Tugushev, V. V.; Eremeev, S. V.; Echenique, P. M.; Chulkov, E. V.
2013-12-01
We theoretically study the magnetic proximity effect in the three-dimensional (3D) topological insulator/ferromagnetic insulator (TI/FMI) structures in the context of possibility to manage the Dirac helical state in TI. Within a continual approach based on the k·p Hamiltonian, we predict that, when a 3D TI is brought into contact with a 3D FMI, the ordinary bound state arising at the TI/FMI interface becomes spin polarized due to the orbital mixing at the boundary. Whereas the wave function of FMI decays into the TI bulk on the atomic scale, the induced exchange field, which is proportional to the FMI magnetization, builds up at the scale of the penetration depth of the ordinary interface state. Such an exchange field opens the gap at the Dirac point in the energy spectrum of the topological bound state existing on the TI side of the interface. We estimate the dependence of the gap size on the material parameters of the TI/FMI contact.
Topological Field Theory of Time-Reversal Invariant Insulators
Qi, Xiao-Liang; Hughes, Taylor; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.
2010-03-19
We show that the fundamental time reversal invariant (TRI) insulator exists in 4 + 1 dimensions, where the effective field theory is described by the 4 + 1 dimensional Chern-Simons theory and the topological properties of the electronic structure is classified by the second Chern number. These topological properties are the natural generalizations of the time reversal breaking (TRB) quantum Hall insulator in 2 + 1 dimensions. The TRI quantum spin Hall insulator in 2 + 1 dimensions and the topological insulator in 3 + 1 dimension can be obtained as descendants from the fundamental TRI insulator in 4 + 1 dimensions through a dimensional reduction procedure. The effective topological field theory, and the Z{sub 2} topological classification for the TRI insulators in 2+1 and 3+1 dimensions are naturally obtained from this procedure. All physically measurable topological response functions of the TRI insulators are completely described by the effective topological field theory. Our effective topological field theory predicts a number of novel and measurable phenomena, the most striking of which is the topological magneto-electric effect, where an electric field generates a magnetic field in the same direction, with an universal constant of proportionality quantized in odd multiples of the fine structure constant {alpha} = e{sup 2}/hc. Finally, we present a general classification of all topological insulators in various dimensions, and describe them in terms of a unified topological Chern-Simons field theory in phase space.
NASA Astrophysics Data System (ADS)
Dietl, Tomasz
The magnitude of ferromagnetic coupling driven by inter-band (Bloembergen-Rowland - BR) and intra-band (Ruderman-Kittel-Kasuya-Yoshida - RKKY) spin polarization is evaluated within kp theory for topological semimetals Hg1-xMnxTe and Hg1-xMnxSe as well as for 3D Dirac semimetal (Cd1-xMnx)3As2. In these systems Mn2+ ions do not introduce any carriers. Since, however, both conduction and valence bands are built from anion p-type wave functions, hybridization of Mn d levels with neighboring anion p states leads to spin-dependent p - d coupling of both electrons and holes to localized Mn spins, resulting in sizable inter-band spin polarization and, thus in large BR interactions. We demonstrate that this ferromagnetic coupling, together with antiferromagnetic superexchange, elucidate a specific dependence of spin-glass freezing temperature on x, determined experimentally for these systems. Furthermore, by employing a multi-orbital tight-binding method, we find that superexchange becomes ferromagnetic when Mn is replaced by Cr or V. Since Cr should act as an isoelectronic impurity in HgTe, this opens a road for realization of ferromagnetic topological insulators based on (Hg,Cr)Te.
An edge index for topological insulators
NASA Astrophysics Data System (ADS)
Prodan, Emil
2009-03-01
Topological insulators display dissipationless currents flowing at the edges of the samples. These currents are associated to chiral edge modes, whose existence is intrinsically linked to the topology of the electronic states of the bulk. The edge modes can be easily investigated when the edges are smooth and have a periodicity, but as soon as the periodicity is absent, the problem becomes un-traceable by purely theoretical means. In my talk I will exemplify the use of non-commutative calculus to explore the properties, especially the stability of the edge modes. For example, using such techniques one can give a fairly elementary proof that the edge modes in Chern insulators survive even for a rough (random) edge. Similarly, for the Spin-Hall effect, one can define an observable and its associated current whose conductance remains quantized during various deformations of the Hamiltonian system. It turns out that in all cases, the edge conductance is given by the index of a Fredholm operator, which provides a new topological invariant linked directly to the edge rather than the bulk.
A scheme for a topological insulator field effect transistor
NASA Astrophysics Data System (ADS)
Vali, Mehran; Dideban, Daryoosh; Moezi, Negin
2015-05-01
We propose a scheme for a topological insulator field effect transistor. The idea is based on the gate voltage control of the Dirac fermions in a ferromagnetic topological insulator channel with perpendicular magnetization connecting to two metallic topological insulator leads. Our theoretical analysis shows that the proposed device displays a switching effect with high on/off current ratio and a negative differential conductance with a good peak to valley ratio.
The topological insulator in a fractal space
Song, Zhi-Gang; Zhang, Yan-Yang; Li, Shu-Shen
2014-06-09
We investigate the band structures and transport properties of a two-dimensional model of topological insulator, with a fractal edge or a fractal bulk. A fractal edge does not affect the robust transport even when the fractal pattern has reached the resolution of the atomic-scale, because the bulk is still well insulating against backscattering. On the other hand, a fractal bulk can support the robust transport only when the fractal resolution is much larger than a critical size. Smaller resolution of bulk fractal pattern will lead to remarkable backscattering and localization, due to strong couplings of opposite edge states on narrow sub-edges which appear almost everywhere in the fractal bulk.
Unusual spin dynamics in topological insulators.
Dóra, Balázs; Simon, Ferenc
2015-10-06
The dynamic spin susceptibility (DSS) has a ubiquitous Lorentzian form around the Zeeman energy in conventional materials with weak spin orbit coupling, whose spectral width characterizes the spin relaxation rate. We show that DSS has an unusual non-Lorentzian form in topological insulators, which are characterized by strong SOC, and the anisotropy of the DSS reveals the orientation of the underlying spin texture of topological states. At zero temperature, the high frequency part of DSS is universal and increases in certain directions as ω(d-1) with d = 2 and 3 for surface states and Weyl semimetals, respectively, while for helical edge states, the interactions renormalize the exponent as d = 2K - 1 with K the Luttinger-liquid parameter. As a result, spin relaxation rate cannot be deduced from the DSS in contrast to the case of usual metals, which follows from the strongly entangled spin and charge degrees of freedom in these systems.
Unusual spin dynamics in topological insulators
NASA Astrophysics Data System (ADS)
Dóra, Balázs; Simon, Ferenc
2015-10-01
The dynamic spin susceptibility (DSS) has a ubiquitous Lorentzian form around the Zeeman energy in conventional materials with weak spin orbit coupling, whose spectral width characterizes the spin relaxation rate. We show that DSS has an unusual non-Lorentzian form in topological insulators, which are characterized by strong SOC, and the anisotropy of the DSS reveals the orientation of the underlying spin texture of topological states. At zero temperature, the high frequency part of DSS is universal and increases in certain directions as ωd-1 with d = 2 and 3 for surface states and Weyl semimetals, respectively, while for helical edge states, the interactions renormalize the exponent as d = 2K - 1 with K the Luttinger-liquid parameter. As a result, spin relaxation rate cannot be deduced from the DSS in contrast to the case of usual metals, which follows from the strongly entangled spin and charge degrees of freedom in these systems.
Thermoelectric efficiency of holey topological insulators
NASA Astrophysics Data System (ADS)
Abanov, Artem; Tretiakov, Oleg; Sinova, Jairo
2012-02-01
We study the thermoelectric properties of three-dimensional topological insulators with many holes (or pores) in the bulk. We show that at high density of these holes the thermoelectric figure of merit, ZT, can be large due to the contribution of the conducting surfaces and the suppressed phonon thermal conductivity. The maximum efficiency can be tuned by an induced gap in the surface states dispersion through tunneling or external magnetic fields. The large values of ZT, much higher than unity for reasonable parameters, make this system a strong candidate for applications in heat management of nanodevices, especially at low temperatures.
Correlation effects in two-dimensional topological insulators.
Hohenadler, M; Assaad, F F
2013-04-10
Topological insulators have become one of the most active research areas in condensed matter physics. This article reviews progress on the topic of electronic correlation effects in the two-dimensional case, with a focus on systems with intrinsic spin-orbit coupling and numerical results. Topics addressed include an introduction to the noninteracting case, an overview of theoretical models, correlated topological band insulators, interaction-driven phase transitions, topological Mott insulators and fractional topological states, correlation effects on helical edge states, and topological invariants of interacting systems.
A topological framework for interactive queries on 3D models in the Web.
Figueiredo, Mauro; Rodrigues, José I; Silvestre, Ivo; Veiga-Pires, Cristina
2014-01-01
Several technologies exist to create 3D content for the web. With X3D, WebGL, and X3DOM, it is possible to visualize and interact with 3D models in a web browser. Frequently, three-dimensional objects are stored using the X3D file format for the web. However, there is no explicit topological information, which makes it difficult to design fast algorithms for applications that require adjacency and incidence data. This paper presents a new open source toolkit TopTri (Topological model for Triangle meshes) for Web3D servers that builds the topological model for triangular meshes of manifold or nonmanifold models. Web3D client applications using this toolkit make queries to the web server to get adjacent and incidence information of vertices, edges, and faces. This paper shows the application of the topological information to get minimal local points and iso-lines in a 3D mesh in a web browser. As an application, we present also the interactive identification of stalactites in a cave chamber in a 3D web browser. Several tests show that even for large triangular meshes with millions of triangles, the adjacency and incidence information is returned in real time making the presented toolkit appropriate for interactive Web3D applications.
A Topological Framework for Interactive Queries on 3D Models in the Web
Figueiredo, Mauro; Rodrigues, José I.; Silvestre, Ivo; Veiga-Pires, Cristina
2014-01-01
Several technologies exist to create 3D content for the web. With X3D, WebGL, and X3DOM, it is possible to visualize and interact with 3D models in a web browser. Frequently, three-dimensional objects are stored using the X3D file format for the web. However, there is no explicit topological information, which makes it difficult to design fast algorithms for applications that require adjacency and incidence data. This paper presents a new open source toolkit TopTri (Topological model for Triangle meshes) for Web3D servers that builds the topological model for triangular meshes of manifold or nonmanifold models. Web3D client applications using this toolkit make queries to the web server to get adjacent and incidence information of vertices, edges, and faces. This paper shows the application of the topological information to get minimal local points and iso-lines in a 3D mesh in a web browser. As an application, we present also the interactive identification of stalactites in a cave chamber in a 3D web browser. Several tests show that even for large triangular meshes with millions of triangles, the adjacency and incidence information is returned in real time making the presented toolkit appropriate for interactive Web3D applications. PMID:24977236
Oliver E. Buckley Condensed Matter Prize Lecture: Topological Insulators
NASA Astrophysics Data System (ADS)
Kane, Charles
2012-02-01
A topological insulator is a material that is an insulator on its interior, but has special conducting states on its surface. These surface states are unlike any other known two dimensional conductor. They are characterized by a unique Dirac type dispersion relation and are protected by a topological property of the material's underlying electronic band structure. In this talk we will outline our path to the theoretical discovery of this phase and describe the physical properties of the two dimensional topological insulator - also known as a quantum spin Hall insulator - as well as its three dimensional generalization. We will then go on to discuss more recent developments, including the topological classification of point and line defects in topological insulators and superconductors. The latter may provide a venue for observing Majorana fermion states and for realizing proposals for topological quantum computation.
Emergence of magnetic topological states in topological insulators doped with magnetic impurities
NASA Astrophysics Data System (ADS)
Tran, Minh-Tien; Nguyen, Hong-Son; Le, Duc-Anh
2016-04-01
Emergence of the topological invariant and the magnetic moment in topological insulators doped with magnetic impurities is studied based on a mutual cooperation between the spin-orbit coupling of electrons and the spin exchange of these electrons with magnetic impurity moments. The mutual cooperation is realized based on the Kane-Mele model in the presence of magnetic impurities. The topological invariants and the spontaneous magnetization are self-consistently determined within the dynamical mean-field theory. We find different magnetic topological phase transitions, depending on the electron filling. At half filling an antiferromagnetic topological insulator, which exhibits the quantum spin Hall effect, exists in the phase region between the paramagnetic topological insulator and the trivially topological antiferromagnetic insulator. At quarter and three-quarter fillings, a ferromagnetic topological insulator, which exhibits the quantum anomalous Hall effect, occurs in the strong spin-exchange regime.
Asymmetric Cherenkov acoustic reverse in topological insulators
NASA Astrophysics Data System (ADS)
Smirnov, Sergey
2014-09-01
A general phenomenon of the Cherenkov radiation known in optics or acoustics of conventional materials is a formation of a forward cone of, respectively, photons or phonons emitted by a particle accelerated above the speed of light or sound in those materials. Here we suggest three-dimensional topological insulators as a unique platform to fundamentally explore and practically exploit the acoustic aspect of the Cherenkov effect. We demonstrate that by applying an in-plane magnetic field to a surface of a three-dimensional topological insulator one may suppress the forward Cherenkov sound up to zero at a critical magnetic field. Above the critical field the Cherenkov sound acquires pure backward nature with the polar distribution differing from the forward one generated below the critical field. Potential applications of this asymmetric Cherenkov reverse are in the design of low energy electronic devices such as acoustic ratchets or, in general, in low power design of electronic circuits with a magnetic field control of the direction and magnitude of the Cherenkov dissipation.
Magnetoelectrics in disordered topological insulator Josephson junctions
NASA Astrophysics Data System (ADS)
Bobkova, I. V.; Bobkov, A. M.; Zyuzin, Alexander A.; Alidoust, Mohammad
2016-10-01
We study theoretically the coupling of electric charge and spin polarization in an equilibrium and nonequilibrium electric transport across a two-dimensional Josephson configuration comprised of disordered surface channels of a three-dimensional topological insulator. In the equilibrium state of the system, we predict the Edelstein effect, which is much more pronounced than its counterpart in conventional spin-orbit coupled materials. Employing a quasiclassical Keldysh technique, we demonstrate that the ground state of the system can be shifted experimentally into arbitrary macroscopic superconducting phase differences other than the standard "0" or "π ," constituting a ϕ0 junction, solely by modulating a quasiparticle flow injection into the junction. We propose a feasible experiment in which the quasiparticles are injected into the topological insulator surface by means of a normal electrode and voltage gradient so that oppositely oriented stationary spin densities can be developed along the interfaces and allow for direct use of the spin-momentum locking nature of Dirac fermions in the surface channels. The ϕ0 state is proportional to the voltage difference applied between the injector electrode and superconducting terminals that calibrates the injection rate of particles and, therefore, the ϕ0 shift.
Persistent optical gating of a topological insulator.
Yeats, Andrew L; Pan, Yu; Richardella, Anthony; Mintun, Peter J; Samarth, Nitin; Awschalom, David D
2015-10-01
The spin-polarized surface states of topological insulators (TIs) are attractive for applications in spintronics and quantum computing. A central challenge with these materials is to reliably tune the chemical potential of their electrons with respect to the Dirac point and the bulk bands. We demonstrate persistent, bidirectional optical control of the chemical potential of (Bi,Sb)2Te3 thin films grown on SrTiO3. By optically modulating a space-charge layer in the SrTiO3 substrates, we induce a persistent field effect in the TI films comparable to electrostatic gating techniques but without additional materials or processing. This enables us to optically pattern arbitrarily shaped p- and n-type regions in a TI, which we subsequently image with scanning photocurrent microscopy. The ability to optically write and erase mesoscopic electronic structures in a TI may aid in the investigation of the unique properties of the topological insulating phase. The gating effect also generalizes to other thin-film materials, suggesting that these phenomena could provide optical control of chemical potential in a wide range of ultrathin electronic systems. PMID:26601300
Persistent optical gating of a topological insulator
Yeats, Andrew L.; Pan, Yu; Richardella, Anthony; Mintun, Peter J.; Samarth, Nitin; Awschalom, David D.
2015-01-01
The spin-polarized surface states of topological insulators (TIs) are attractive for applications in spintronics and quantum computing. A central challenge with these materials is to reliably tune the chemical potential of their electrons with respect to the Dirac point and the bulk bands. We demonstrate persistent, bidirectional optical control of the chemical potential of (Bi,Sb)2Te3 thin films grown on SrTiO3. By optically modulating a space-charge layer in the SrTiO3 substrates, we induce a persistent field effect in the TI films comparable to electrostatic gating techniques but without additional materials or processing. This enables us to optically pattern arbitrarily shaped p- and n-type regions in a TI, which we subsequently image with scanning photocurrent microscopy. The ability to optically write and erase mesoscopic electronic structures in a TI may aid in the investigation of the unique properties of the topological insulating phase. The gating effect also generalizes to other thin-film materials, suggesting that these phenomena could provide optical control of chemical potential in a wide range of ultrathin electronic systems. PMID:26601300
Enhancing Casimir repulsion via topological insulator multilayers
NASA Astrophysics Data System (ADS)
Zeng, Ran; Chen, Liang; Nie, Wenjie; Bi, Meihua; Yang, Yaping; Zhu, Shiyao
2016-08-01
We propose to observe the enhanced Casimir repulsion between two parallel multilayer walls made of alternating layers of a topological insulator (TI) and a normal insulator. Based on the transfer matrix method, the Fresnel coefficients matrix is generalized to apply to the TI multilayer structure. The Casimir repulsion under the influence of the magnetization orientation in the magnetic coatings on TI layer surfaces, the layer thicknesses, and the topological magnetoelectric polarizability, is investigated. We show that, for the multilayer structures with parallel magnetization on the TI layer surfaces, it is possible to enhance the repulsion by increasing the TI layer number, which is due to the accumulation of the contribution to the repulsion from the polarization rotation effect occurring on each TI layer surface. Generally, in the distance region where there is Casimir attraction between semi-infinite TIs, the force may turn into repulsion in TI multilayer structure, and in the region of repulsion for semi-infinite TI, the repulsive force can be enhanced in magnitude, the enhancement tends to a maximum while the structure contains sufficiently many layers.
Persistent optical gating of a topological insulator.
Yeats, Andrew L; Pan, Yu; Richardella, Anthony; Mintun, Peter J; Samarth, Nitin; Awschalom, David D
2015-10-01
The spin-polarized surface states of topological insulators (TIs) are attractive for applications in spintronics and quantum computing. A central challenge with these materials is to reliably tune the chemical potential of their electrons with respect to the Dirac point and the bulk bands. We demonstrate persistent, bidirectional optical control of the chemical potential of (Bi,Sb)2Te3 thin films grown on SrTiO3. By optically modulating a space-charge layer in the SrTiO3 substrates, we induce a persistent field effect in the TI films comparable to electrostatic gating techniques but without additional materials or processing. This enables us to optically pattern arbitrarily shaped p- and n-type regions in a TI, which we subsequently image with scanning photocurrent microscopy. The ability to optically write and erase mesoscopic electronic structures in a TI may aid in the investigation of the unique properties of the topological insulating phase. The gating effect also generalizes to other thin-film materials, suggesting that these phenomena could provide optical control of chemical potential in a wide range of ultrathin electronic systems.
Classification of topological crystalline insulators based on representation theory
NASA Astrophysics Data System (ADS)
Dong, Xiao-Yu; Liu, Chao-Xing
2016-01-01
Topological crystalline insulators define a new class of topological insulator phases with gapless surface states protected by crystalline symmetries. In this work, we present a general theory to classify topological crystalline insulator phases based on the representation theory of space groups. Our approach is to directly identify possible nontrivial surface states in a semi-infinite system with a specific surface, of which the symmetry property can be described by 17 two-dimensional space groups. We reproduce the existing results of topological crystalline insulators, such as mirror Chern insulators in the p m or p m m groups, Cn v topological insulators in the p 4 m ,p 31 m , and p 6 m groups, and topological nonsymmorphic crystalline insulators in the p g and p m g groups. Aside from these existing results, we also obtain the following results: (1) there are two integer mirror Chern numbers (Z2) in the p m group but only one (Z ) in the c m or p 3 m 1 group for both the spinless and spinful cases; (2) for the p m m (c m m ) groups, there is no topological classification in the spinless case but Z4 (Z2) classifications in the spinful case; (3) we show how topological crystalline insulator phase in the p g group is related to that in the p m group; (4) we identify topological classification of the p 4 m ,p 31 m , and p 6 m for the spinful case; (5) we find topological nonsymmorphic crystalline insulators also existing in p g g and p 4 g groups, which exhibit new features compared to those in p g and p m g groups. We emphasize the importance of the irreducible representations for the states at some specific high-symmetry momenta in the classification of topological crystalline phases. Our theory can serve as a guide for the search of topological crystalline insulator phases in realistic materials.
A first theoretical realization of honeycomb topological magnon insulator
NASA Astrophysics Data System (ADS)
Owerre, S. A.
2016-09-01
It has been recently shown that in the Heisenberg (anti)ferromagnet on the honeycomb lattice, the magnons (spin wave quasipacticles) realize a massless two-dimensional (2D) Dirac-like Hamiltonian. It was shown that the Dirac magnon Hamiltonian preserves time-reversal symmetry defined with the sublattice pseudo spins and the Dirac points are robust against magnon–magnon interactions. The Dirac points also occur at nonzero energy. In this paper, we propose a simple realization of nontrivial topology (magnon edge states) in this system. We show that the Dirac points are gapped when the inversion symmetry of the lattice is broken by introducing a next-nearest neighbour Dzyaloshinskii–Moriya (DM) interaction. Thus, the system realizes magnon edge states similar to the Haldane model for quantum anomalous Hall effect in electronic systems. However, in contrast to electronic spin current where dissipation can be very large due to Ohmic heating, noninteracting topological magnons can propagate for a long time without dissipation as magnons are uncharged particles. We observe the same magnon edge states for the XY model on the honeycomb lattice. Remarkably, in this case the model maps to interacting hardcore bosons on the honeycomb lattice. Quantum magnetic systems with nontrivial magnon edge states are called topological magnon insulators. They have been studied theoretically on the kagome lattice and recently observed experimentally on the kagome magnet Cu(1-3, bdc) with three magnon bulk bands. Our results for the honeycomb lattice suggests an experimental procedure to search for honeycomb topological magnon insulators within a class of 2D quantum magnets and ultracold atoms trapped in honeycomb optical lattices. In 3D lattices, Dirac and Weyl points were recently studied theoretically, however, the criteria that give rise to them were not well-understood. We argue that the low-energy Hamiltonian near the Weyl points should break time-reversal symmetry of the pseudo
A first theoretical realization of honeycomb topological magnon insulator.
Owerre, S A
2016-09-28
It has been recently shown that in the Heisenberg (anti)ferromagnet on the honeycomb lattice, the magnons (spin wave quasipacticles) realize a massless two-dimensional (2D) Dirac-like Hamiltonian. It was shown that the Dirac magnon Hamiltonian preserves time-reversal symmetry defined with the sublattice pseudo spins and the Dirac points are robust against magnon-magnon interactions. The Dirac points also occur at nonzero energy. In this paper, we propose a simple realization of nontrivial topology (magnon edge states) in this system. We show that the Dirac points are gapped when the inversion symmetry of the lattice is broken by introducing a next-nearest neighbour Dzyaloshinskii-Moriya (DM) interaction. Thus, the system realizes magnon edge states similar to the Haldane model for quantum anomalous Hall effect in electronic systems. However, in contrast to electronic spin current where dissipation can be very large due to Ohmic heating, noninteracting topological magnons can propagate for a long time without dissipation as magnons are uncharged particles. We observe the same magnon edge states for the XY model on the honeycomb lattice. Remarkably, in this case the model maps to interacting hardcore bosons on the honeycomb lattice. Quantum magnetic systems with nontrivial magnon edge states are called topological magnon insulators. They have been studied theoretically on the kagome lattice and recently observed experimentally on the kagome magnet Cu(1-3, bdc) with three magnon bulk bands. Our results for the honeycomb lattice suggests an experimental procedure to search for honeycomb topological magnon insulators within a class of 2D quantum magnets and ultracold atoms trapped in honeycomb optical lattices. In 3D lattices, Dirac and Weyl points were recently studied theoretically, however, the criteria that give rise to them were not well-understood. We argue that the low-energy Hamiltonian near the Weyl points should break time-reversal symmetry of the pseudo spins
A first theoretical realization of honeycomb topological magnon insulator
NASA Astrophysics Data System (ADS)
Owerre, S. A.
2016-09-01
It has been recently shown that in the Heisenberg (anti)ferromagnet on the honeycomb lattice, the magnons (spin wave quasipacticles) realize a massless two-dimensional (2D) Dirac-like Hamiltonian. It was shown that the Dirac magnon Hamiltonian preserves time-reversal symmetry defined with the sublattice pseudo spins and the Dirac points are robust against magnon-magnon interactions. The Dirac points also occur at nonzero energy. In this paper, we propose a simple realization of nontrivial topology (magnon edge states) in this system. We show that the Dirac points are gapped when the inversion symmetry of the lattice is broken by introducing a next-nearest neighbour Dzyaloshinskii-Moriya (DM) interaction. Thus, the system realizes magnon edge states similar to the Haldane model for quantum anomalous Hall effect in electronic systems. However, in contrast to electronic spin current where dissipation can be very large due to Ohmic heating, noninteracting topological magnons can propagate for a long time without dissipation as magnons are uncharged particles. We observe the same magnon edge states for the XY model on the honeycomb lattice. Remarkably, in this case the model maps to interacting hardcore bosons on the honeycomb lattice. Quantum magnetic systems with nontrivial magnon edge states are called topological magnon insulators. They have been studied theoretically on the kagome lattice and recently observed experimentally on the kagome magnet Cu(1-3, bdc) with three magnon bulk bands. Our results for the honeycomb lattice suggests an experimental procedure to search for honeycomb topological magnon insulators within a class of 2D quantum magnets and ultracold atoms trapped in honeycomb optical lattices. In 3D lattices, Dirac and Weyl points were recently studied theoretically, however, the criteria that give rise to them were not well-understood. We argue that the low-energy Hamiltonian near the Weyl points should break time-reversal symmetry of the pseudo spins
Transport studies in topological insulator Bi2Te2Se
NASA Astrophysics Data System (ADS)
Cao, Helin; Miotkowski, Ireneusz; Tian, Jifa; Chen, Yong
2013-03-01
Recently, 3D topological insulators, featuring spin helical topological surface states (SS), have attracted strong attention in condensed matter physics. Although the SS have been directly revealed and intensively studied by surface sensitive measurements, such as ARPES and STM, transport measurements remain challenging due to coexistence of the surface and bulk conduction channels and the sensitivity of sample surfaces to ambient exposure. We have grown high quality Bi2Te2Se crystals by the Bridgeman method. Resistance showed an insulating behavior followed by saturation at low temperature, indicating surface conduction. Through magnetotransport measurements, we demonstrated high mobility SS on freshly cleaved crystals. The transport signatures of surface Dirac fermions were uncovered from 2D SdH oscillations and non-linear Hall effect. We have also compared transport properties of the samples before and after exposure to air. A giant cusp in magnetoresistance at zero B field was observed after exposure. Our studies may help understand the interplay between the surface and the bulk conduction channels and the degradation of SS due to environmental exposure. We will also present some experimental results of gate tuning and thermoelectric measurements on Bi2Te2Se. We acknowledge support from DARPA MESO program (Grant N66001-11-1-4107).
Quantum phase transitions of topological insulators without gap closing.
Rachel, Stephan
2016-10-12
We consider two-dimensional Chern insulators and time-reversal invariant topological insulators and discuss the effect of perturbations breaking either particle-number conservation or time-reversal symmetry. The appearance of trivial mass terms is expected to cause quantum phase transitions into trivial phases when such a perturbation overweighs the topological term. These phase transitions are usually associated with a bulk-gap closing. In contrast, the chiral Chern insulator is unaffected by particle-number breaking perturbations. Moreover, the [Formula: see text] topological insulator undergoes phase transitions into topologically trivial phases without bulk-gap closing in the presence of any of such perturbations. In certain cases, these phase transitions can be circumvented and the protection restored by another U(1) symmetry, e.g. due to spin conservation. These findings are discussed in the context of interacting topological insulators.
Pure spin current devices based on ferromagnetic topological insulators
Götte, Matthias; Joppe, Michael; Dahm, Thomas
2016-01-01
Two-dimensional topological insulators possess two counter propagating edge channels with opposite spin direction. Recent experimental progress allowed to create ferromagnetic topological insulators realizing a quantum anomalous Hall (QAH) state. In the QAH state one of the two edge channels disappears due to the strong ferromagnetic exchange field. We investigate heterostructures of topological insulators and ferromagnetic topological insulators by means of numerical transport calculations. We show that spin current flow in such heterostructures can be controlled with high fidelity. Specifically, we propose spintronic devices that are capable of creating, switching and detecting pure spin currents using the same technology. In these devices electrical currents are directly converted into spin currents, allowing a high conversion efficiency. Energy independent transport properties in combination with large bulk gaps in some topological insulator materials may allow operation even at room temperature. PMID:27782187
Quantum phase transitions of topological insulators without gap closing
NASA Astrophysics Data System (ADS)
Rachel, Stephan
2016-10-01
We consider two-dimensional Chern insulators and time-reversal invariant topological insulators and discuss the effect of perturbations breaking either particle-number conservation or time-reversal symmetry. The appearance of trivial mass terms is expected to cause quantum phase transitions into trivial phases when such a perturbation overweighs the topological term. These phase transitions are usually associated with a bulk-gap closing. In contrast, the chiral Chern insulator is unaffected by particle-number breaking perturbations. Moreover, the {{{Z}}2} topological insulator undergoes phase transitions into topologically trivial phases without bulk-gap closing in the presence of any of such perturbations. In certain cases, these phase transitions can be circumvented and the protection restored by another U(1) symmetry, e.g. due to spin conservation. These findings are discussed in the context of interacting topological insulators.
Quantum phase transitions of topological insulators without gap closing.
Rachel, Stephan
2016-10-12
We consider two-dimensional Chern insulators and time-reversal invariant topological insulators and discuss the effect of perturbations breaking either particle-number conservation or time-reversal symmetry. The appearance of trivial mass terms is expected to cause quantum phase transitions into trivial phases when such a perturbation overweighs the topological term. These phase transitions are usually associated with a bulk-gap closing. In contrast, the chiral Chern insulator is unaffected by particle-number breaking perturbations. Moreover, the [Formula: see text] topological insulator undergoes phase transitions into topologically trivial phases without bulk-gap closing in the presence of any of such perturbations. In certain cases, these phase transitions can be circumvented and the protection restored by another U(1) symmetry, e.g. due to spin conservation. These findings are discussed in the context of interacting topological insulators. PMID:27530509
Electrically tuned magnetic order and magnetoresistance in a topological insulator.
Zhang, Zuocheng; Feng, Xiao; Guo, Minghua; Li, Kang; Zhang, Jinsong; Ou, Yunbo; Feng, Yang; Wang, Lili; Chen, Xi; He, Ke; Ma, Xucun; Xue, Qikun; Wang, Yayu
2014-09-15
The interplay between topological protection and broken time reversal symmetry in topological insulators may lead to highly unconventional magnetoresistance behaviour that can find unique applications in magnetic sensing and data storage. However, the magnetoresistance of topological insulators with spontaneously broken time reversal symmetry is still poorly understood. In this work, we investigate the transport properties of a ferromagnetic topological insulator thin film fabricated into a field effect transistor device. We observe a complex evolution of gate-tuned magnetoresistance, which is positive when the Fermi level lies close to the Dirac point but becomes negative at higher energies. This trend is opposite to that expected from the Berry phase picture, but is intimately correlated with the gate-tuned magnetic order. The underlying physics is the competition between the topology-induced weak antilocalization and magnetism-induced negative magnetoresistance. The simultaneous electrical control of magnetic order and magnetoresistance facilitates future topological insulator based spintronic devices.
Anomalous magnetoresistance in magnetized topological insulator cylinders
NASA Astrophysics Data System (ADS)
Siu, Zhuo Bin; Jalil, Mansoor B. A.
2015-05-01
The close coupling between the spin and momentum degrees of freedom in topological insulators (TIs) presents the opportunity for the control of one to manipulate the other. The momentum can, for example, be confined on a curved surface and the spin influenced by applying a magnetic field. In this work, we study the surface states of a cylindrical TI magnetized in the x direction perpendicular to the cylindrical axis lying along the z direction. We show that a large magnetization leads to an upwards bending of the energy bands at small |kz| . The bending leads to an anomalous magnetoresistance where the transmission between two cylinders magnetized in opposite directions is higher than when the cylinders are magnetized at intermediate angles with respect to each other.
Anomalous magnetoresistance in magnetized topological insulator cylinders
Siu, Zhuo Bin; Jalil, Mansoor B. A.
2015-05-07
The close coupling between the spin and momentum degrees of freedom in topological insulators (TIs) presents the opportunity for the control of one to manipulate the other. The momentum can, for example, be confined on a curved surface and the spin influenced by applying a magnetic field. In this work, we study the surface states of a cylindrical TI magnetized in the x direction perpendicular to the cylindrical axis lying along the z direction. We show that a large magnetization leads to an upwards bending of the energy bands at small |k{sub z}|. The bending leads to an anomalous magnetoresistance where the transmission between two cylinders magnetized in opposite directions is higher than when the cylinders are magnetized at intermediate angles with respect to each other.
Zhang, Xiaoguang; McGuire, Michael A.; Chen, Yong P.; Li, An -Ping; Durand, Corentin; Hus, Saban M.; Ma, Chuanxu; Hu, Yang; Cao, Helin; Miotkowski, Ireneusz
2016-03-08
Topological insulators, with characteristic topological surface states, have emerged as a new state of matter with rich potentials for both fundamental physics and device applications. However, the experimental detection of the surface transport has been hampered by the unavoidable extrinsic conductivity associated with the bulk crystals. Here we show that a four-probe transport spectroscopy in a multi-probe scanning tunneling microscopy system can be used to differentiate conductivities from the surface states and the coexisting bulk states in topological insulators. We derive a scaling relation of measured resistance with respect to varying inter-probe spacing for two interconnected conduction channels, which allowsmore » quantitative determination of conductivities from both channels. Using this method, we demonstrate the separation of 2D and 3D conduction in topological insulators by comparing the conductance scaling of Bi2Se3, Bi2Te2Se, and Sb-doped Bi2Se3 with that of a pure 2D conductance of graphene on SiC substrate. We also report the 2D conductance enhancement due to the surface doping effect in topological insulators. This technique can be applied to reveal 2D to 3D crossover of conductance in other complex systems.« less
Charge d-wave topological insulator
Kopaev, Yu. V.; Kapaev, V. V.; Belyavskii, V. I.
2013-10-15
Formation of a condensate of singlet electron-hole pairs in a two-dimensional metal lattice with the nesting of the Fermi contour is investigated. A numerical solution is obtained for the self-consistency equation for the insulating order parameter depending on the ratio of the coupling constants in the s- and d-wave channels of electron-hole pairing. Solutions with the pure orbital symmetry of s- and d-type are found, as well as solutions with the mixed s + d-symmetry. It is shown that in a wide range of values of the s- and d-wave coupling constants, the two-dimensional insulating order with the orbital symmetry d{sub x{sup 2}-y{sup 2}} can compete with pure ordered s- and d{sub xy}-states and mixed s + d-states. Time reversal symmetry breaking under an established real order with d{sub x{sup 2}-y{sup 2}} -wave symmetry may generate the imaginary component of the order parameter with symmetry d{sub xy} and cause a rise in topologically nontrivial d + id-wave ordering similar to the quantum Hall state in the absence of external magnetic field.
Unusual spin dynamics in topological insulators
Dóra, Balázs; Simon, Ferenc
2015-01-01
The dynamic spin susceptibility (DSS) has a ubiquitous Lorentzian form around the Zeeman energy in conventional materials with weak spin orbit coupling, whose spectral width characterizes the spin relaxation rate. We show that DSS has an unusual non-Lorentzian form in topological insulators, which are characterized by strong SOC, and the anisotropy of the DSS reveals the orientation of the underlying spin texture of topological states. At zero temperature, the high frequency part of DSS is universal and increases in certain directions as ωd−1 with d = 2 and 3 for surface states and Weyl semimetals, respectively, while for helical edge states, the interactions renormalize the exponent as d = 2K − 1 with K the Luttinger-liquid parameter. As a result, spin relaxation rate cannot be deduced from the DSS in contrast to the case of usual metals, which follows from the strongly entangled spin and charge degrees of freedom in these systems. PMID:26439629
Current-Induced Spin Polarization in Topological Insulator-Graphene Heterostructures.
Vaklinova, Kristina; Hoyer, Alexander; Burghard, Marko; Kern, Klaus
2016-04-13
Further development of the field of all-electric spintronics requires the successful integration of spin transport channels with spin injector/generator elements. While with the advent of graphene and related 2D materials high performance spin channel materials are available, the use of nanostructured spin generators remains a major challenge. Especially promising for the latter purpose are 3D topological insulators, whose 2D surface states host massless Dirac Fermions with spin-momentum locking. Here, we demonstrate injection of spin-polarized current from a topological insulator into graphene, enabled by its intimate coupling to an ultrathin Bi2Te2Se nanoplatelet within a van der Waals epitaxial heterostructure. The spin switching signal, whose magnitude scales inversely with temperature, is detectable up to ∼15 K. Our findings establish topological insulators as prospective future components of spintronic devices wherein spin manipulation is achieved by purely electrical means.
Current-Induced Spin Polarization in Topological Insulator-Graphene Heterostructures
NASA Astrophysics Data System (ADS)
Vaklinova, Kristina; Hoyer, Alexander; Burghard, Marko; Kern, Klaus
2016-04-01
Further development of the field of all-electric spintronics requires the successful integration of spin transport channels with spin injector/generator elements. While with the advent of graphene and related 2D materials high performance spin channel materials are available, the use of nanostructured spin generators remains a major challenge. Especially promising for the latter purpose are 3D topological insulators, whose 2D surface states host massless Dirac fermions with spin-momentum locking. Here, we demonstrate injection of spin-polarized current from a topological insulator into graphene, enabled by its intimate coupling to an ultrathin Bi2Te2Se nanoplatelet within a van der Waals epitaxial heterostructure. The spin switching signal, whose magnitude scales inversely with temperature, is detectable up to ~15 K. Our findings establish topological insulators as prospective future components of spintronic devices wherein spin manipulation is achieved by purely electrical means.
Effective hydrodynamic field theory and condensation picture of topological insulators
NASA Astrophysics Data System (ADS)
Chan, AtMa P. O.; Kvorning, Thomas; Ryu, Shinsei; Fradkin, Eduardo
2016-04-01
While many features of topological band insulators are commonly discussed at the level of single-particle electron wave functions, such as the gapless Dirac boundary spectrum, it remains elusive to develop a hydrodynamic or collective description of fermionic topological band insulators in 3+1 dimensions. As the Chern-Simons theory for the 2+1-dimensional quantum Hall effect, such a hydrodynamic effective field theory provides a universal description of topological band insulators, even in the presence of interactions, and that of putative fractional topological insulators. In this paper, we undertake this task by using the functional bosonization. The effective field theory in the functional bosonization is written in terms of a two-form gauge field, which couples to a U (1 ) gauge field that arises by gauging the continuous symmetry of the target system [the U (1 ) particle number conservation]. Integrating over the U (1 ) gauge field by using the electromagnetic duality, the resulting theory describes topological band insulators as a condensation phase of the U (1 ) gauge theory (or as a monopole condensation phase of the dual gauge field). The hydrodynamic description of the surface of topological insulators and the implication of its duality are also discussed. We also touch upon the hydrodynamic theory of fractional topological insulators by using the parton construction.
Anomalous photoelectric effect of a polycrystalline topological insulator film.
Zhang, Hongbin; Yao, Jiandong; Shao, Jianmei; Li, Hai; Li, Shuwei; Bao, Dinghua; Wang, Chengxin; Yang, Guowei
2014-07-29
A topological insulator represents a new state of quantum matter that possesses an insulating bulk band gap as well as a spin-momentum-locked Dirac cone on the surface that is protected by time-reversal symmetry. Photon-dressed surface states and light-induced surface photocurrents have been observed in topological insulators. Here, we report experimental observations of an anomalous photoelectric effect in thin films of Bi2Te3, a polycrystalline topological insulator. Under illumination with non-polarised light, transport measurements reveal that the resistance of the topological surface states suddenly increases when the polycrystalline film is illuminated. The resistance variation is positively dependent on the light intensity but has no relation to the applied electric field; this finding can be attributed to the gap opening of the surface Dirac cone. This observation of an anomalous photoelectric effect in polycrystalline topological insulators offers exciting opportunities for the creation of photodetectors with an unusually broad spectral range. Moreover, polycrystalline topological insulator films provide an attractive material platform for exploring the nature and practical application of topological insulators.
Spin-torque generation in topological insulator based heterostructures
NASA Astrophysics Data System (ADS)
Fischer, Mark H.; Vaezi, Abolhassan; Manchon, Aurelien; Kim, Eun-Ah
2016-03-01
Heterostructures utilizing topological insulators exhibit a remarkable spin-torque efficiency. However, the exact origin of the strong torque, in particular whether it stems from the spin-momentum locking of the topological surface states or rather from spin-Hall physics of the topological-insulator bulk, remains unclear. Here, we explore a mechanism of spin-torque generation purely based on the topological surface states. We consider topological-insulator-based bilayers involving ferromagnetic metal (TI/FM) and magnetically doped topological insulators (TI/mdTI), respectively. By ascribing the key theoretical differences between the two setups to location and number of active surface states, we describe both setups within the same framework of spin diffusion of the nonequilibrium spin density of the topological surface states. For the TI/FM bilayer, we find large spin-torque efficiencies of roughly equal magnitude for both in-plane and out-of-plane spin torques. For the TI/mdTI bilayer, we elucidate the dominance of the spin-transfer-like torque. However, we cannot explain the orders of magnitude enhancement reported. Nevertheless, our model gives an intuitive picture of spin-torque generation in topological-insulator-based bilayers and provides theoretical constraints on spin-torque generation due to topological surface states.
Symmetry protected Josephson supercurrents in three-dimensional topological insulators.
Cho, Sungjae; Dellabetta, Brian; Yang, Alina; Schneeloch, John; Xu, Zhijun; Valla, Tonica; Gu, Genda; Gilbert, Matthew J; Mason, Nadya
2013-01-01
Coupling the surface state of a topological insulator to an s-wave superconductor is predicted to produce the long-sought Majorana quasiparticle excitations. However, superconductivity has not been measured in surface states when the bulk charge carriers are fully depleted, that is, in the true topological regime relevant for investigating Majorana modes. Here we report measurements of d.c. Josephson effects in topological insulator-superconductor junctions as the chemical potential is moved through the true topological regime characterized by the presence of only surface currents. We compare our results with three-dimensional quantum transport simulations, and determine the effects of bulk/surface mixing, disorder and magnetic field; in particular, we show that the supercurrent is largely carried by surface states, due to the inherent topology of the bands, and that it is robust against disorder. Our results thus clarify key open issues regarding the nature of supercurrents in topological insulators. PMID:23575693
Liu, Qihang; Zhang, Xiuwen; Abdalla, L B; Fazzio, Adalberto; Zunger, Alex
2015-02-11
The study of topological insulators has generally involved search of materials that have this property as an innate quality, distinct from normal insulators. Here we focus on the possibility of converting a normal insulator into a topological one by application of an external electric field that shifts different bands by different energies and induces a specific band inversion, which leads to a topological state. Phosphorene is a two-dimensional (2D) material that can be isolated through mechanical exfoliation from layered black phosphorus, but unlike graphene and silicene, single-layer phosphorene has a large band gap (1.5-2.2 eV). Thus, it was unsuspected to exhibit band inversion and the ensuing topological insulator behavior. Using first-principles calculations with applied perpendicular electric field F⊥ on few-layer phosphorene we predict a continuous transition from the normal insulator to a topological insulator and eventually to a metal as a function of F⊥. The tuning of topological behavior with electric field would lead to spin-separated, gapless edge states, that is, quantum spin Hall effect. This finding opens the possibility of converting normal insulating materials into topological ones via electric field and making a multifunctional "field effect topological transistor" that could manipulate simultaneously both spin and charge carrier. We use our results to formulate some design principles for looking for other 2D materials that could have such an electrical-induced topological transition.
NASA Astrophysics Data System (ADS)
Rex, Stefan; Nogueira, Flavio S.; Sudbø, Asle
2016-07-01
The magnetoelectric effect predicted in topological insulators makes heterostructures that combine magnetic materials and such insulators promising candidates for spintronics applications. Here, we theoretically consider a setup that exhibits two well-separated interfaces between a topological insulator and a ferromagnetic insulator. We show that there is a topological magnetic dipole-dipole interaction stemming from long-range Coulomb interactions. We analytically derive the magnetization dynamics at the two interfaces and discuss how the long-range coupling can be applied to nonlocally induce the formation of a magnetic texture at one interface by suitably gating the other interface.
Synthesis and Characterization of New Topological Insulators
NASA Astrophysics Data System (ADS)
Segawa, Kouji
2012-02-01
In this talk, I will show detailed information on synthesizing process and characterization results of new topological insulator (TI) materials with interesting properties. Among the synthesized materials, TlBiSe2 was the first ternary TI and has the largest bulk band gap [1], TlBi(S1-x,Sex)2 presents a topological phase transition with unexpected Dirac mass [2], BiTe2Se presents a large bulk resistivity [3], and Bi1.5Sb0.5Te1.7Se1.3 has finally achieved the surface-dominated transport in bulk single crystals [4]. It is essentially easy to grow single crystals of all the chalcogenides above, because those compounds melt congruently at relatively low temperatures. Therefore, the melt-growth method is applicable if the raw materials are in a sealed condition, e.g., in a quartz tube. However, crucial techniques for obtaining high-quality samples vary between the systems. Besides the growth method, characterizations of the transport properties, ARPES, the X-ray diffraction, and quantitative chemical analysis will also be presented. [4pt] This work is in collaboration with A. A. Taskin, S. Sasaki, Zhi Ren, K. Eto, T. Minami, and Y. Ando (Osaka Univ.), and T. Sato, S. Souma, H. Guo, K. Sugawara, K. Kosaka and K. Nakayama, and T. Takahashi (Tohoku Univ.). [4pt] [1] T. Sato, Kouji Segawa, T. Takahashi, Y. Ando et al., Phys. Rev. Lett. 105, 136802 (2010). [2] T. Sato, Kouji Segawa, Y. Ando, T. Takahashi et al., Nature Physics, 7, 840 (2011). [3] Zhi Ren, Kouji Segawa, Y. Ando et al., Phys. Rev. B (Rapid Comm.) 82, 241306(R) (2010). [4] A. A. Taskin, Kouji Segawa, and Y. Ando et al., Phys. Rev. Lett. 107, 016801 (2011).
Thermoelectric transport of edge/surface states of topological insulators
NASA Astrophysics Data System (ADS)
Murakami, Shuichi; Takahashi, Ryuji
2011-03-01
In my talk we theoretically study thermoelectric properties of topological insulators (TI), where novel properties of edge/surface states are expected to appear. As compared to the number of bulk states, the edge/surface states are very few; we therefore consider a narrow ribbon for 2D and a thin slab for 3D TI to make the edge/surface-state transport larger. By considering edge/surface and bulk transport together, we calculate the charge and heat conductivity, and Seebeck coefficient. We find that in 2D TI the bulk and edge transport compete each other in the thermoelectric transport. By lowering temperature, the thermoelectric figure of merit ZT has a minimum, corresponding to the bulk-to-edge crossover, and then increases again at low temperature where the edge state dominates. The crossover is estimated to be at around 5K-10K for 10nm-width ribbon. We also discuss surface state transport for 3D TI as well.
Thermoelectric performance of classical topological insulator nanowires
NASA Astrophysics Data System (ADS)
Gooth, Johannes; Göran Gluschke, Jan; Zierold, Robert; Leijnse, Martin; Linke, Heiner; Nielsch, Kornelius
2015-01-01
There is currently substantial effort being invested into creating efficient thermoelectric (TE) nanowires based on topological insulator (TI) chalcogenide-type materials. A key premise of these efforts is the assumption that the generally good TE properties that these materials exhibit in bulk form will translate into similarly good or even better TE performance of the same materials in nanowire form. Here, we calculate TE performance of TI nanowires based on Bi2Te3, Sb2Te3 and Bi2Se3 as a function of diameter and Fermi level. We show that the TE performance of TI nanowires does not derive from the properties of the bulk material in a straightforward way. For all investigated systems the competition between surface states and bulk channel causes a significant modification of the TE transport coefficients if the diameter is reduced into the sub 10 μm range. Key aspects are that the surface and bulk states are optimized at different Fermi levels or have different polarity as well as the high surface to volume ratio of the nanowires. This limits the maximum TE performance of TI nanowires and thus their application in efficient TE devices.
Electrical tuning of transport properties of topological insulator ultrathin films.
Li, H; Shao, J M; Zhang, H B; Yang, G W
2014-03-21
Considering that topological insulator (TI) ultrathin films (UTFs) provide an ideal platform for the transport measurement of topologically protected surface states, we have investigated the transport properties of the three-dimensional (3D) TI UTFs through an array of potential barriers. The 3D TI UTF was considered to be thin enough (5 nm) that the top and bottom surface states of the UTF can hybridize to create an energy gap at the Dirac point, which results in a hyperbola-like energy dispersion. It was found that the Klein tunneling effect disappears due to the interaction between the top and bottom surface states. By tuning the barrier strength or the incident energy, three kinds of transport processes can be realized, and the conditions of the transport processes were determined. The oscillatory characters of the transmission (conductance) spectra without a decaying envelope are due to the novel surface states of TIs, which are quite different from that observed for a conventional two-dimensional electron gas. For the structure consisting of two anti-parallel potential barriers, the conductance spectra exhibit a perfect on/off switching effect by tuning the barrier strength, which is favorable for electrically controllable device applications. In the case of a superlattice (SL) structure, due to the mini-gaps induced by the SL geometry, some additional resonant peaks and valleys can be observed in the transmission spectra, and similar characters are also reflected in the conductance spectra. Owing to the Dirac characters of the charge carriers therein, the transmission (conductance) spectra never decay with increasing barrier strength, which is distinguished from that observed for semiconductor SLs. These findings were not only meaningful for understanding the basic physical processes in the transport of TIs, but also useful for developing nanoscaled TI-based devices.
Topological insulators/superconductors: Potential future electronic materials
Hor, Y. S.
2014-03-05
A new material called topological insulator has been discovered and becomes one of the fastest growing field in condensed matter physics. Topological insulator is a new quantum phase of matter which has Dirac-like conductivity on its surface, but bulk insulator through its interior. It is considered a challenging problem for the surface transport measurements because of dominant internal conductance due to imperfections of the existing crystals of topological insulators. By a proper method, the internal bulk conduction can be suppressed in a topological insulator, and permit the detection of the surface currents which is necessary for future fault-tolerant quantum computing applications. Doped topological insulators have depicted a large variety of bulk physical properties ranging from magnetic to superconducting behaviors. By chemical doping, a TI can change into a bulk superconductor. Nb{sub x}Bi{sub 2}Se{sub 3} is shown to be a superconductor with T{sub c} ∼ 3.2 K, which could be a potential candidate for a topological superconductor.
Park, Byung Cheol; Kim, Tae-Hyeon; Sim, Kyung Ik; Kang, Boyoun; Kim, Jeong Won; Cho, Beongki; Jeong, Kwang-Ho; Cho, Mann-Ho; Kim, Jae Hoon
2015-03-16
Strong spin-orbit interaction and time-reversal symmetry in topological insulators generate novel quantum states called topological surface states. Their study provides unique opportunities to explore exotic phenomena such as spin Hall effects and topological phase transitions, relevant to the development of quantum devices for spintronics and quantum computation. Although ultrahigh-vacuum surface probes can identify individual topological surface states, standard electrical and optical experiments have so far been hampered by the interference of bulk and quantum well states. Here, with terahertz time-domain spectroscopy of ultrathin Bi₂Se₃ films, we give evidence for topological phase transitions, a single conductance quantum per topological surface state, and a quantized terahertz absorbance of 2.9% (four times the fine structure constant). Our experiment demonstrates the feasibility to isolate, detect and manipulate topological surface states in the ambient at room temperature for future fundamental research on the novel physics of topological insulators and their practical applications.
Topological classification of crystalline insulators with space group symmetry
Jadaun, Priyamvada; Xiao, Di; Niu, Q.; Banerjee, Sanjay K.
2013-01-01
We show that in crystalline insulators, space group symmetry alone gives rise to a topological classification based on the discretization of electric polarization. Using C3 rotational symmetry as an example, we first prove that the polarization is discretized into three distinct classes, i.e., it can only take three inequivalent values. We then prove that these classes are topologically distinct. Therefore, a Z3 topological classification exists, with polarization as a topological class index. A concrete tight-binding model is derived to demonstrate the Z3 topological phase transition. Using first-principles calculations, we identify graphene on a BN substrate as a possible candidate to realize these Z3 topological states. To complete our analysis, we extend the classification of band structures to all 17 two-dimensional space groups. This work will contribute to a complete theory of symmetry-conserved topological phases and also elucidate topological properties of graphenelike systems.
Optical conductivity of topological insulator thin films
Li, L. L.; Xu, W.; Peeters, F. M.
2015-05-07
We present a detailed theoretical study on the optoelectronic properties of topological insulator thin film (TITFs). The k·p approach is employed to calculate the energy spectra and wave functions for both the bulk and surface states in the TITF. With these obtained results, the optical conductivities induced by different electronic transitions among the bulk and surface states are evaluated using the energy-balance equation derived from the Boltzmann equation. We find that for Bi{sub 2}Se{sub 3}-based TITFs, three characteristic regimes for the optical absorption can be observed. (i) In the low radiation frequency regime (photon energy ℏω<200 meV), the free-carrier absorption takes place due to intraband electronic transitions. An optical absorption window can be observed. (ii) In the intermediate radiation frequency regime (200<ℏω<300 meV), the optical absorption is induced mainly by interband electronic transitions from surface states in the valance band to surface states in the conduction band and an universal value σ{sub 0}=e{sup 2}/(8ℏ) for the optical conductivity can be obtained. (iii) In the high radiation frequency regime (ℏω>300 meV), the optical absorption can be achieved via interband electronic transitions from bulk and surface states in the valance band to bulk and surface states in the conduction band. A strong absorption peak can be observed. These interesting findings indicate that optical measurements can be applied to identify the energy regimes of bulk and surface states in the TITF.
A non-commutative framework for topological insulators
NASA Astrophysics Data System (ADS)
Bourne, C.; Carey, A. L.; Rennie, A.
2016-04-01
We study topological insulators, regarded as physical systems giving rise to topological invariants determined by symmetries both linear and anti-linear. Our perspective is that of non-commutative index theory of operator algebras. In particular, we formulate the index problems using Kasparov theory, both complex and real. We show that the periodic table of topological insulators and superconductors can be realized as a real or complex index pairing of a Kasparov module capturing internal symmetries of the Hamiltonian with a spectral triple encoding the geometry of the sample’s (possibly non-commutative) Brillouin zone.
Generic Symmetry Breaking Instability of Topological Insulators due to a Novel van Hove Singularity
NASA Astrophysics Data System (ADS)
He, Xugang; Xi, Xiaoxiang; Ku, Wei
2015-03-01
We point out that in the deep band-inverted state, topological insulators are generically vulnerable against symmetry breaking instability, due to a divergently large density of states of 1D-like exponent near the chemical potential. This feature at the band edge is associated with a novel van Hove singularity resulting from the development of a Mexican-hat band dispersion. We demonstrate this generic behavior via prototypical 2D and 3D models. This realization not only explains the existing experimental observations of additional phases, but also suggests a route to activate additional functionalities to topological insulators via ordering, particularly for the long-sought topological superconductivities. Work funded by the U.S. Department of Energy, Office of Basic Energy Sciences DE-AC02-98CH10886.
Phase coherent transport in hybrid superconductor-topological insulator devices
NASA Astrophysics Data System (ADS)
Finck, Aaron
2015-03-01
Heterostructures of superconductors and topological insulators are predicted to host unusual zero energy bound states known as Majorana fermions, which can robustly store and process quantum information. Here, I will discuss our studies of such heterostructures through phase-coherent transport, which can act as a unique probe of Majorana fermions. We have extensively explored topological insulator Josephson junctions through SQUID and single-junction diffraction patterns, whose unusual behavior give evidence for low-energy Andreev bound states. In topological insulator devices with closely spaced normal and superconducting leads, we observe prominent Fabry-Perot oscillations, signifying gate-tunable, quasi-ballistic transport that can elegantly interact with Andreev reflection. Superconducting disks deposited on the surface of a topological insulator generate Aharonov-Bohm-like oscillations, giving evidence for unusual states lying near the interface between the superconductor and topological insulator surface. Our results point the way towards sophisticated interferometers that can detect and read out the state of Majorana fermions in topological systems. This work was done in collaboration with Cihan Kurter, Yew San Hor, and Dale Van Harlingen. We acknowledge funding from Microsoft Project Q.
Prediction of weak topological insulators in layered semiconductors.
Yan, Binghai; Müchler, Lukas; Felser, Claudia
2012-09-14
We report the discovery of weak topological insulators by ab initio calculations in a honeycomb lattice. We propose a structure with an odd number of layers in the primitive unit cell as a prerequisite for forming weak topological insulators. Here, the single-layered KHgSb is the most suitable candidate for its large bulk energy gap of 0.24 eV. Its side surface hosts metallic surface states, forming two anisotropic Dirac cones. Although the stacking of even-layered structures leads to trivial insulators, the structures can host a quantum spin Hall layer with a large bulk gap, if an additional single layer exists as a stacking fault in the crystal. The reported honeycomb compounds can serve as prototypes to aid in the finding of new weak topological insulators in layered small-gap semiconductors.
Spin texture of an irradiated warped topological insulator surface
NASA Astrophysics Data System (ADS)
Sinha, Debabrata
2016-08-01
Topological insulator is a new state of matter which exhibits exotic surface electronic properties. Determining the spin texture of this class of materials is of paramount importance for understanding its topological order and can lead to potential applications in spintronics. Here, we have investigated the nature of the surface state of the topological insulator with hexagonal warping subjected to an off-resonant circularly polarized light. The resulting electronic ground state exhibits a novel feature of spin texture breaking the conventional spin-momentum locking present on a topological insulator surface. The observed spin texture is shown to be a consequence of the symmetry group of the underlying crystal. The generalisation of our method to the other 2D graphene-like systems is straightforward. Our calculation traces a simple experimental route for a realisation of the non trivial spin textures.
An efficient topology adaptation system for parametric active contour segmentation of 3D images
NASA Astrophysics Data System (ADS)
Abhau, Jochen; Scherzer, Otmar
2008-03-01
Active contour models have already been used succesfully for segmentation of organs from medical images in 3D. In implicit models, the contour is given as the isosurface of a scalar function, and therefore topology adaptations are handled naturally during a contour evolution. Nevertheless, explicit or parametric models are often preferred since user interaction and special geometric constraints are usually easier to incorporate. Although many researchers have studied topology adaptation algorithms in explicit mesh evolutions, no stable algorithm is known for interactive applications. In this paper, we present a topology adaptation system, which consists of two novel ingredients: A spatial hashing technique is used to detect self-colliding triangles of the mesh whose expected running time is linear with respect to the number of mesh vertices. For the topology change procedure, we have developed formulas by homology theory. During a contour evolution, we just have to choose between a few possible mesh retriangulations by local triangle-triangle intersection tests. Our algorithm has several advantages compared to existing ones: Since the new algorithm does not require any global mesh reparametrizations, it is very efficient. Since the topology adaptation system does not require constant sampling density of the mesh vertices nor especially smooth meshes, mesh evolution steps can be performed in a stable way with a rather coarse mesh. We apply our algorithm to 3D ultrasonic data, showing that accurate segmentation is obtained in some seconds.
Topological Crystalline Insulator in a New Bi Semiconducting Phase.
Munoz, F; Vergniory, M G; Rauch, T; Henk, J; Chulkov, E V; Mertig, I; Botti, S; Marques, M A L; Romero, A H
2016-02-24
Topological crystalline insulators are a type of topological insulators whose topological surface states are protected by a crystal symmetry, thus the surface gap can be tuned by applying strain or an electric field. In this paper we predict by means of ab initio calculations a new phase of Bi which is a topological crystalline insulator characterized by a mirror Chern number nM = -2, but not a strong topological insulator. This system presents an exceptional property: at the (001) surface its Dirac cones are pinned at the surface high-symmetry points. As a consequence they are also protected by time-reversal symmetry and can survive against weak disorder even if in-plane mirror symmetry is broken at the surface. Taking advantage of this dual protection, we present a strategy to tune the band-gap based on a topological phase transition unique to this system. Since the spin-texture of these topological surface states reduces the back-scattering in carrier transport, this effective band-engineering is expected to be suitable for electronic and optoelectronic devices with reduced dissipation.
Topological Crystalline Insulator in a New Bi Semiconducting Phase.
Munoz, F; Vergniory, M G; Rauch, T; Henk, J; Chulkov, E V; Mertig, I; Botti, S; Marques, M A L; Romero, A H
2016-01-01
Topological crystalline insulators are a type of topological insulators whose topological surface states are protected by a crystal symmetry, thus the surface gap can be tuned by applying strain or an electric field. In this paper we predict by means of ab initio calculations a new phase of Bi which is a topological crystalline insulator characterized by a mirror Chern number nM = -2, but not a strong topological insulator. This system presents an exceptional property: at the (001) surface its Dirac cones are pinned at the surface high-symmetry points. As a consequence they are also protected by time-reversal symmetry and can survive against weak disorder even if in-plane mirror symmetry is broken at the surface. Taking advantage of this dual protection, we present a strategy to tune the band-gap based on a topological phase transition unique to this system. Since the spin-texture of these topological surface states reduces the back-scattering in carrier transport, this effective band-engineering is expected to be suitable for electronic and optoelectronic devices with reduced dissipation. PMID:26905601
Topological Crystalline Insulator in a New Bi Semiconducting Phase
Munoz, F.; Vergniory, M. G.; Rauch, T.; Henk, J.; Chulkov, E. V.; Mertig, I.; Botti, S.; Marques, M. A. L.; Romero, A. H.
2016-01-01
Topological crystalline insulators are a type of topological insulators whose topological surface states are protected by a crystal symmetry, thus the surface gap can be tuned by applying strain or an electric field. In this paper we predict by means of ab initio calculations a new phase of Bi which is a topological crystalline insulator characterized by a mirror Chern number nM = −2, but not a strong topological insulator. This system presents an exceptional property: at the (001) surface its Dirac cones are pinned at the surface high-symmetry points. As a consequence they are also protected by time-reversal symmetry and can survive against weak disorder even if in-plane mirror symmetry is broken at the surface. Taking advantage of this dual protection, we present a strategy to tune the band-gap based on a topological phase transition unique to this system. Since the spin-texture of these topological surface states reduces the back-scattering in carrier transport, this effective band-engineering is expected to be suitable for electronic and optoelectronic devices with reduced dissipation. PMID:26905601
Topological Crystalline Insulator in a New Bi Semiconducting Phase
NASA Astrophysics Data System (ADS)
Munoz, F.; Vergniory, M. G.; Rauch, T.; Henk, J.; Chulkov, E. V.; Mertig, I.; Botti, S.; Marques, M. A. L.; Romero, A. H.
2016-02-01
Topological crystalline insulators are a type of topological insulators whose topological surface states are protected by a crystal symmetry, thus the surface gap can be tuned by applying strain or an electric field. In this paper we predict by means of ab initio calculations a new phase of Bi which is a topological crystalline insulator characterized by a mirror Chern number nM = -2, but not a strong topological insulator. This system presents an exceptional property: at the (001) surface its Dirac cones are pinned at the surface high-symmetry points. As a consequence they are also protected by time-reversal symmetry and can survive against weak disorder even if in-plane mirror symmetry is broken at the surface. Taking advantage of this dual protection, we present a strategy to tune the band-gap based on a topological phase transition unique to this system. Since the spin-texture of these topological surface states reduces the back-scattering in carrier transport, this effective band-engineering is expected to be suitable for electronic and optoelectronic devices with reduced dissipation.
Topological evolutionary computing in the optimal design of 2D and 3D structures
NASA Astrophysics Data System (ADS)
Burczynski, T.; Poteralski, A.; Szczepanik, M.
2007-10-01
An application of evolutionary algorithms and the finite-element method to the topology optimization of 2D structures (plane stress, bending plates, and shells) and 3D structures is described. The basis of the topological evolutionary optimization is the direct control of the density material distribution (or thickness for 2D structures) by the evolutionary algorithm. The structures are optimized for stress, mass, and compliance criteria. The numerical examples demonstrate that this method is an effective technique for solving problems in computer-aided optimal design.
Chen, Y
2011-08-18
Angle resolved photoemission spectroscopy (ARPES) study on TlBiTe2 and TlBiSe2 from a Thallium-based III-V-VI2 ternary chalcogenides family revealed a single surface Dirac cone at the center of the Brillouin zone for both compounds. For TlBiSe{sub 2}, the large bulk gap ({approx} 200meV) makes it a topological insulator with better mechanical properties than the previous binary 3D topological insualtor family. For TlBiTe{sub 2}, the observed negative bulk gap indicates it as a semi-metal, rather than a narrow gap semi-conductor as conventionally believed; this semi-metality naturally explains its mysteriously small thermoelectric figure of merit comparing to other compounds in the family. Finally, the unique band structures of TlBiTe{sub 2} also suggests it as a candidate for topological superconductors.
Chen, Y L; Liu, Z K; Analytis, J G; Chu, J-H; Zhang, H J; Yan, B H; Mo, S-K; Moore, R G; Lu, D H; Fisher, I R; Zhang, S C; Hussain, Z; Shen, Z-X
2010-12-31
Angle resolved photoemission spectroscopy study on TlBiTe2 and TlBiSe2 from a thallium-based ternary chalcogenides family revealed a single surface Dirac cone at the center of the Brillouin zone for both compounds. For TlBiSe2, the large bulk gap (∼200 meV) makes it a topological insulator with better mechanical properties than the previous binary 3D topological insualtor family. For TlBiTe2, the observed negative bulk gap indicates it as a semimetal, instead of a narrow-gap semiconductor as conventionally believed; this semimetality naturally explains its mysteriously small thermoelectric figure of merit comparing to other compounds in the family. Finally, the unique band structures of TlBiTe2 also suggest it as a candidate for topological superconductors. PMID:21231687
NASA Astrophysics Data System (ADS)
Chen, Y. L.; Liu, Z. K.; Analytis, J. G.; Chu, J.-H.; Zhang, H. J.; Yan, B. H.; Mo, S.-K.; Moore, R. G.; Lu, D. H.; Fisher, I. R.; Zhang, S. C.; Hussain, Z.; Shen, Z.-X.
2010-12-01
Angle resolved photoemission spectroscopy study on TlBiTe2 and TlBiSe2 from a thallium-based ternary chalcogenides family revealed a single surface Dirac cone at the center of the Brillouin zone for both compounds. For TlBiSe2, the large bulk gap (˜200meV) makes it a topological insulator with better mechanical properties than the previous binary 3D topological insualtor family. For TlBiTe2, the observed negative bulk gap indicates it as a semimetal, instead of a narrow-gap semiconductor as conventionally believed; this semimetality naturally explains its mysteriously small thermoelectric figure of merit comparing to other compounds in the family. Finally, the unique band structures of TlBiTe2 also suggest it as a candidate for topological superconductors.
Lee, Yejin; Hong, Kyunghi; Hong, Sung-Ae
2007-05-01
Garment fit and resultant air volume is a crucial factor in thermal insulation, and yet, it has been difficult to quantify the air volume of clothing microclimate and relate it to the thermal insulation value just using the information on the size of clothing pattern without actual 3D volume measurement in wear condition. As earlier methods for the computation of air volume in clothing microclimate, vacuum over suit and circumference model have been used. However, these methods have inevitable disadvantages in terms of cost or accuracy due to the limitations of measurement equipment. In this paper, the phase-shifting moiré topography was introduced as one of the 3D scanning tools to measure the air volume of clothing microclimate quantitatively. The purpose of this research is to adopt a non-contact image scanning technology, phase-shifting moiré topography, to ascertain relationship between air volume and insulation value of layered clothing systems in wear situations where the 2D fabric creates new conditions in 3D spaces. The insulation of vests over shirts as a layered clothing system was measured with a thermal manikin in the environmental condition of 20 degrees C, 65% RH and air velocity of 0.79 m/s. As the pattern size increased, the insulation of the clothing system was increased. But beyond a certain limit, the insulation started to decrease due to convection and ventilation, which is more apparent when only the vest was worn over the torso of manikin. The relationship between clothing air volume and insulation was difficult to predict with a single vest due to the extreme openings which induced active ventilation. But when the vest was worn over the shirt, the effects of thickness of the fabrics on insulation were less pronounced compared with that of air volume. In conclusion, phase-shifting moiré topography was one of the efficient and accurate ways of quantifying air volume and its distribution across the clothing microclimate. It is also noted
Interaction effects and quantum phase transitions in topological insulators
Varney, Christopher N.; Sun Kai; Galitski, Victor; Rigol, Marcos
2010-09-15
We study strong correlation effects in topological insulators via the Lanczos algorithm, which we utilize to calculate the exact many-particle ground-state wave function and its topological properties. We analyze the simple, noninteracting Haldane model on a honeycomb lattice with known topological properties and demonstrate that these properties are already evident in small clusters. Next, we consider interacting fermions by introducing repulsive nearest-neighbor interactions. A first-order quantum phase transition was discovered at finite interaction strength between the topological band insulator and a topologically trivial Mott insulating phase by use of the fidelity metric and the charge-density-wave structure factor. We construct the phase diagram at T=0 as a function of the interaction strength and the complex phase for the next-nearest-neighbor hoppings. Finally, we consider the Haldane model with interacting hard-core bosons, where no evidence for a topological phase is observed. An important general conclusion of our work is that despite the intrinsic nonlocality of topological phases their key topological properties manifest themselves already in small systems and therefore can be studied numerically via exact diagonalization and observed experimentally, e.g., with trapped ions and cold atoms in optical lattices.
Topology optimization of 3D structures with design-dependent loads
NASA Astrophysics Data System (ADS)
Zhang, Hui; Liu, Shu-Tian; Zhang, Xiong
2010-10-01
Topology optimization of continuum structures with design-dependent loads has long been a challenge. In this paper, the topology optimization of 3D structures subjected to design-dependent loads is investigated. A boundary search scheme is proposed for 3D problems, by means of which the load surface can be identified effectively and efficiently, and the difficulties arising in other approaches can be overcome. The load surfaces are made up of the boundaries of finite elements and the loads can be directly applied to corresponding element nodes, which leads to great convenience in the application of this method. Finally, the effectiveness and efficiency of the proposed method is validated by several numerical examples.
Two-dimensional topological crystalline insulator phase in quantum wells of trivial insulators
NASA Astrophysics Data System (ADS)
Niu, Chengwang; Buhl, Patrick M.; Bihlmayer, Gustav; Wortmann, Daniel; Blügel, Stefan; Mokrousov, Yuriy
2016-06-01
The realization of two-dimensional (2D) topological insulators (TIs) in HgTe/CdTe quantum wells (QWs) has generated an explosion of research on TIs and novel topologically nontrivial phases. Here we predict, based on first-principles calculations, that the newly discovered 2D topological crystalline insulators (TCIs) phase exists even in the QWs of trivial insulators, e.g. (Sn/Pb)Te and Na(Cl/Br), with mirror Chern number {n}{{M}}=-2. Tunable nontrivial energy gaps ranging from 4 to 238 meV are obtained, guaranteeing further room-temperature observations and applications. The combined effect of strain and electrostatic interaction that can be engineered by the cladding layers leads to a band inversion, resulting in the phase transition from trivial insulator to 2D TCIs. Our work provides a new strategy for engineering topological states in 2D materials.
Complex band structure of topological insulator Bi2Se3.
Betancourt, J; Li, S; Dang, X; Burton, J D; Tsymbal, E Y; Velev, J P
2016-10-01
Topological insulators are very interesting from a fundamental point of view, and their unique properties may be useful for electronic and spintronic device applications. From the point of view of applications it is important to understand the decay behavior of carriers injected in the band gap of the topological insulator, which is determined by its complex band structure (CBS). Using first-principles calculations, we investigate the dispersion and symmetry of the complex bands of Bi2Se3 family of three-dimensional topological insulators. We compare the CBS of a band insulator and a topological insulator and follow the CBS evolution in both when the spin-orbit interaction is turned on. We find significant differences in the CBS linked to the topological band structure. In particular, our results demonstrate that the evanescent states in Bi2Se3 are non-trivially complex, i.e. contain both the real and imaginary contributions. This explains quantitatively the oscillatory behavior of the band gap obtained from Bi2Se3 (0 0 0 1) slab calculations. PMID:27485021
Complex band structure of topological insulator Bi2Se3
NASA Astrophysics Data System (ADS)
Betancourt, J.; Li, S.; Dang, X.; Burton, J. D.; Tsymbal, E. Y.; Velev, J. P.
2016-10-01
Topological insulators are very interesting from a fundamental point of view, and their unique properties may be useful for electronic and spintronic device applications. From the point of view of applications it is important to understand the decay behavior of carriers injected in the band gap of the topological insulator, which is determined by its complex band structure (CBS). Using first-principles calculations, we investigate the dispersion and symmetry of the complex bands of Bi2Se3 family of three-dimensional topological insulators. We compare the CBS of a band insulator and a topological insulator and follow the CBS evolution in both when the spin-orbit interaction is turned on. We find significant differences in the CBS linked to the topological band structure. In particular, our results demonstrate that the evanescent states in Bi2Se3 are non-trivially complex, i.e. contain both the real and imaginary contributions. This explains quantitatively the oscillatory behavior of the band gap obtained from Bi2Se3 (0 0 0 1) slab calculations.
Photonic topological insulator with broken time-reversal symmetry.
He, Cheng; Sun, Xiao-Chen; Liu, Xiao-Ping; Lu, Ming-Hui; Chen, Yulin; Feng, Liang; Chen, Yan-Feng
2016-05-01
A topological insulator is a material with an insulating interior but time-reversal symmetry-protected conducting edge states. Since its prediction and discovery almost a decade ago, such a symmetry-protected topological phase has been explored beyond electronic systems in the realm of photonics. Electrons are spin-1/2 particles, whereas photons are spin-1 particles. The distinct spin difference between these two kinds of particles means that their corresponding symmetry is fundamentally different. It is well understood that an electronic topological insulator is protected by the electron's spin-1/2 (fermionic) time-reversal symmetry [Formula: see text] However, the same protection does not exist under normal circumstances for a photonic topological insulator, due to photon's spin-1 (bosonic) time-reversal symmetry [Formula: see text] In this work, we report a design of photonic topological insulator using the Tellegen magnetoelectric coupling as the photonic pseudospin orbit interaction for left and right circularly polarized helical spin states. The Tellegen magnetoelectric coupling breaks bosonic time-reversal symmetry but instead gives rise to a conserved artificial fermionic-like-pseudo time-reversal symmetry, Tp ([Formula: see text]), due to the electromagnetic duality. Surprisingly, we find that, in this system, the helical edge states are, in fact, protected by this fermionic-like pseudo time-reversal symmetry Tp rather than by the bosonic time-reversal symmetry Tb This remarkable finding is expected to pave a new path to understanding the symmetry protection mechanism for topological phases of other fundamental particles and to searching for novel implementations for topological insulators.
Photonic topological insulator with broken time-reversal symmetry
He, Cheng; Sun, Xiao-Chen; Liu, Xiao-Ping; Lu, Ming-Hui; Chen, Yulin; Feng, Liang; Chen, Yan-Feng
2016-01-01
A topological insulator is a material with an insulating interior but time-reversal symmetry-protected conducting edge states. Since its prediction and discovery almost a decade ago, such a symmetry-protected topological phase has been explored beyond electronic systems in the realm of photonics. Electrons are spin-1/2 particles, whereas photons are spin-1 particles. The distinct spin difference between these two kinds of particles means that their corresponding symmetry is fundamentally different. It is well understood that an electronic topological insulator is protected by the electron’s spin-1/2 (fermionic) time-reversal symmetry Tf2=−1. However, the same protection does not exist under normal circumstances for a photonic topological insulator, due to photon’s spin-1 (bosonic) time-reversal symmetry Tb2=1. In this work, we report a design of photonic topological insulator using the Tellegen magnetoelectric coupling as the photonic pseudospin orbit interaction for left and right circularly polarized helical spin states. The Tellegen magnetoelectric coupling breaks bosonic time-reversal symmetry but instead gives rise to a conserved artificial fermionic-like-pseudo time-reversal symmetry, Tp (Tp2=−1), due to the electromagnetic duality. Surprisingly, we find that, in this system, the helical edge states are, in fact, protected by this fermionic-like pseudo time-reversal symmetry Tp rather than by the bosonic time-reversal symmetry Tb. This remarkable finding is expected to pave a new path to understanding the symmetry protection mechanism for topological phases of other fundamental particles and to searching for novel implementations for topological insulators. PMID:27092005
Photonic topological insulator with broken time-reversal symmetry.
He, Cheng; Sun, Xiao-Chen; Liu, Xiao-Ping; Lu, Ming-Hui; Chen, Yulin; Feng, Liang; Chen, Yan-Feng
2016-05-01
A topological insulator is a material with an insulating interior but time-reversal symmetry-protected conducting edge states. Since its prediction and discovery almost a decade ago, such a symmetry-protected topological phase has been explored beyond electronic systems in the realm of photonics. Electrons are spin-1/2 particles, whereas photons are spin-1 particles. The distinct spin difference between these two kinds of particles means that their corresponding symmetry is fundamentally different. It is well understood that an electronic topological insulator is protected by the electron's spin-1/2 (fermionic) time-reversal symmetry [Formula: see text] However, the same protection does not exist under normal circumstances for a photonic topological insulator, due to photon's spin-1 (bosonic) time-reversal symmetry [Formula: see text] In this work, we report a design of photonic topological insulator using the Tellegen magnetoelectric coupling as the photonic pseudospin orbit interaction for left and right circularly polarized helical spin states. The Tellegen magnetoelectric coupling breaks bosonic time-reversal symmetry but instead gives rise to a conserved artificial fermionic-like-pseudo time-reversal symmetry, Tp ([Formula: see text]), due to the electromagnetic duality. Surprisingly, we find that, in this system, the helical edge states are, in fact, protected by this fermionic-like pseudo time-reversal symmetry Tp rather than by the bosonic time-reversal symmetry Tb This remarkable finding is expected to pave a new path to understanding the symmetry protection mechanism for topological phases of other fundamental particles and to searching for novel implementations for topological insulators. PMID:27092005
NASA Astrophysics Data System (ADS)
Owerre, S. A.
2016-06-01
We investigate an ultra-thin film of topological insulator (TI) multilayer as a model for a three-dimensional (3D) Weyl semimetal. We introduce tunneling parameters t S, {{t}\\bot} , and t D, where the former two parameters couple layers of the same thin film at small and large momenta, and the latter parameter couples neighbouring thin film layers along the z-direction. The Chern number is computed in each topological phase of the system and we find that for {{t}\\text{S}},{{t}\\text{D}}>0 , the tunneling parameter {{t}\\bot} changes from positive to negative as the system transits from Weyl semi-metallic phase to insulating phases. We further study the chiral magnetic effect (CME) of the system in the presence of a time dependent magnetic field. We compute the low-temperature dependence of the chiral magnetic conductivity and show that it captures three distinct phases of the system separated by plateaus. Furthermore, we propose and study a 3D lattice model of Porphyrin thin film, an organic material known to support topological Frenkel exciton edge states. We show that this model exhibits a 3D Weyl semi-metallic phase and also supports a 2D Weyl semi-metallic phase. We further show that this model recovers that of 3D Weyl semimetal in topological insulator thin film multilayer. Thus, paving the way for simulating a 3D Weyl semimetal in topological insulator thin film multilayer. We obtain the surface states (Fermi arcs) in the 3D model and the chiral edge states in the 2D model and analyze their topological properties.
Owerre, S A
2016-06-15
We investigate an ultra-thin film of topological insulator (TI) multilayer as a model for a three-dimensional (3D) Weyl semimetal. We introduce tunneling parameters t S, [Formula: see text], and t D, where the former two parameters couple layers of the same thin film at small and large momenta, and the latter parameter couples neighbouring thin film layers along the z-direction. The Chern number is computed in each topological phase of the system and we find that for [Formula: see text], the tunneling parameter [Formula: see text] changes from positive to negative as the system transits from Weyl semi-metallic phase to insulating phases. We further study the chiral magnetic effect (CME) of the system in the presence of a time dependent magnetic field. We compute the low-temperature dependence of the chiral magnetic conductivity and show that it captures three distinct phases of the system separated by plateaus. Furthermore, we propose and study a 3D lattice model of Porphyrin thin film, an organic material known to support topological Frenkel exciton edge states. We show that this model exhibits a 3D Weyl semi-metallic phase and also supports a 2D Weyl semi-metallic phase. We further show that this model recovers that of 3D Weyl semimetal in topological insulator thin film multilayer. Thus, paving the way for simulating a 3D Weyl semimetal in topological insulator thin film multilayer. We obtain the surface states (Fermi arcs) in the 3D model and the chiral edge states in the 2D model and analyze their topological properties.
Owerre, S A
2016-06-15
We investigate an ultra-thin film of topological insulator (TI) multilayer as a model for a three-dimensional (3D) Weyl semimetal. We introduce tunneling parameters t S, [Formula: see text], and t D, where the former two parameters couple layers of the same thin film at small and large momenta, and the latter parameter couples neighbouring thin film layers along the z-direction. The Chern number is computed in each topological phase of the system and we find that for [Formula: see text], the tunneling parameter [Formula: see text] changes from positive to negative as the system transits from Weyl semi-metallic phase to insulating phases. We further study the chiral magnetic effect (CME) of the system in the presence of a time dependent magnetic field. We compute the low-temperature dependence of the chiral magnetic conductivity and show that it captures three distinct phases of the system separated by plateaus. Furthermore, we propose and study a 3D lattice model of Porphyrin thin film, an organic material known to support topological Frenkel exciton edge states. We show that this model exhibits a 3D Weyl semi-metallic phase and also supports a 2D Weyl semi-metallic phase. We further show that this model recovers that of 3D Weyl semimetal in topological insulator thin film multilayer. Thus, paving the way for simulating a 3D Weyl semimetal in topological insulator thin film multilayer. We obtain the surface states (Fermi arcs) in the 3D model and the chiral edge states in the 2D model and analyze their topological properties. PMID:27157544
Efficient THz emission from a topological insulator surface
NASA Astrophysics Data System (ADS)
Zhu, Li-Guo; Kubera, Brian; Mak, Kin Fai; Shan, Jie
2012-02-01
Bi2Se3 is a 3D topological insulator (TI) recently confirmed by the ARPES.ootnotetextHsieh et al. Nature 460, 1101 (2009). Direct optical probe of its metallic surface states is, however, hindered by the remnant Drude response of the bulk material. Second-order nonlinear optical techniques with their surface specificity provide unique opportunities for studying surface electronic transitions in TIs such as Bi2Se3 with bulk inversion symmetry.ootnotetextHsieh et al. Phys. Rev. Lett. 106, 057401 (2011). Here we demonstrate efficient THz emission from the surface of Bi2Se3 under the excitation of a femtosecond optical pulse. The emission arises from optical rectification of the optical pulse at the TI surface and the transient current within the surface depletion region. By spectrally resolving the emission under different pump and emission polarizations, we separate the different contributions. Effects arising from just a few atomic layers of the sample surface due to resonance enhancement of the quasi-real optical transitions between the surface electronic states will be discussed.
Quantum anomalous Hall effect and tunable topological states in 3d transition metals doped silicene.
Zhang, Xiao-Long; Liu, Lan-Feng; Liu, Wu-Ming
2013-01-01
Silicene is an intriguing 2D topological material which is closely analogous to graphene but with stronger spin orbit coupling effect and natural compatibility with current silicon-based electronics industry. Here we demonstrate that silicene decorated with certain 3d transition metals (Vanadium) can sustain a stable quantum anomalous Hall effect using both analytical model and first-principles Wannier interpolation. We also predict the quantum valley Hall effect and electrically tunable topological states could be realized in certain transition metal doped silicene where the energy band inversion occurs. Our findings provide new scheme for the realization of quantum anomalous Hall effect and platform for electrically controllable topological states which are highly desirable for future nanoelectronics and spintronics application. PMID:24105063
The changing colors of a quantum-confined topological insulator.
Vargas, Anthony; Basak, Susmita; Liu, Fangze; Wang, Baokai; Panaitescu, Eugen; Lin, Hsin; Markiewicz, Robert; Bansil, Arun; Kar, Swastik
2014-02-25
Bismuth selenide (Bi2Se3) is a 3D topological insulator, its strong spin-orbit coupling resulting in the well-known topologically protected coexistence of gapless metallic surface states and semiconducting bulk states with a band gap, Eg ≃ 300 meV. A fundamental question of considerable importance is how the electronic properties of this material evolve under nanoscale confinement. We report on catalyst-free, high-quality single-crystalline Bi2Se3 with controlled lateral sizes and layer thicknesses that could be tailored down to a few nanometers and a few quintuple layers (QLs), respectively. Energy-resolved photoabsorption spectroscopy (1.5 eV < E(photon) < 6 eV) of these samples reveals a dramatic evolution of the photon absorption spectra as a function of size, transitioning from a featureless metal-like spectrum in the bulk (corresponding to a visually gray color), to one with a remarkably large band gap (Eg ≥ 2.5 eV) and a spectral shape that correspond to orange-red colorations in the smallest samples, similar to those seen in semiconductor nanostructures. We analyze this colorful transition using ab initio density functional theory and tight-binding calculations which corroborate our experimental findings and further suggest that while purely 2D sheets of few QL-thick Bi2Se3 do exhibit small band gaps that are consistent with previous ARPES results, the presently observed large gaps of a few electronvolts can only result from a combined effect of confinement in all three directions. PMID:24428365
Efficient routing in network-on-chip for 3D topologies
NASA Astrophysics Data System (ADS)
Silva Junior, Luneque; Nedjah, Nadia; De Macedo Mourelle, Luiza
2015-10-01
With the increasing of the integration capability intra-chip, nowadays numerous integrated systems explore a set of processing elements, such as in multicore processors. An efficient interconnection of those elements can be obtained via the use of Network on chip (NoC). This approach is similar to the traditional computer networks where, not restricted to multiprocessors, it is possible to interconnect several dedicated devices. Like other networks, NoCs can be arranged in different topologies, such as ring, mesh and torus. It has shared links that can be used in the transmission of packets of different nodes. Thus, the network congestion is an issue and must be treated to reduce delays. Algorithms based on ant colony optimisation have proven to be effective in static routing in systems designed to perform a fixed set of tasks, or where the communication pattern is known. This article introduces 3D ant colony routing (3D-ACR) and applies it as routing policy of NoCs having three different 3D topologies: mesh, torus and hypercube. Experimental results show that 3D ant colony routing performs consistently better compared with the previously proposed routing strategies.
Time- and Site- Resolved Dynamics in a Circuit Topological Insulator
NASA Astrophysics Data System (ADS)
Jia, Ningyuan; Owens, Clai; Sommer, Ariel; Schuster, David; Simon, Jonathan
2014-05-01
With the discovery of the quantum Hall effect and topological insulators there has been an outpouring of ideas to harness topologically knotted band-structures in the design of state-of-the art, disorder-insensitive materials. Here we demonstrate the first simultaneous site- and time- resolved measurements of a time reversal invariant topological insulator, realized in a novel RF circuit topology. In this meta-material, we induce global topology in the band structure via local braiding in a capacitor-inductor network. We observe a gapped density of states consistent with a modified Hofstadter spectrum at a flux per plaquette of ϕ = π / 2 . In-situ probes reveal spatial localization within the bulk energy-gaps, as well as de-localized edge states. Time-resolved dynamics demonstrate a splitting of localized excitations into spin-resolved edge-modes. The RF circuit paradigm is naturally compatible widely proposed non-local coupling schemes, allowing us to implement a Mobius topological insulator inaccessible to conventional materials. Combining local braiding in an RF circuit with circuit-QED techniques, provides a direct path to topologically ordered quantum phases of matter.
Observation of chiral currents at the magnetic domain boundary of a topological insulator
NASA Astrophysics Data System (ADS)
Wang, Yihua
2015-03-01
The broken time-reversal symmetry (TRS) states on the surface of a three-dimensional topological insulator (3D-TI) promise many exotic quantum phenomena. Breaking TRS opens a band gap on the surface Dirac cone and transforms the metallic surface into a Chern insulator. The TRS-broken surface states coupled to a superconductor are predicted to lead to Majorana fermions, which are the fundamental ingredients of topological quantum computation. Just as the surface Dirac cone is a signature of the non-trivial topological bulk band structure of a time-reversal invariant 3D-TI, bulk-boundary correspondence dictates that the TRS-broken surface states with a nonzero Chern number is manifested by a gapless chiral edge state (CES) at the domain boundary. In the special case where the domain boundary is the edge of the sample surface, CES along the edge leads to a quantized anomalous Hall conductance, which was recently measured in a magnetically doped 3D-TI. More generally, a magnetic domain boundary on the surface of TI hosts a CES, which is yet to be directly demonstrated because any local change of conductivity due to the CES does not affect conductance globally. Here we use a scanning superconducting quantum interference device (SQUID) to show that in a uniformly magnetized topological insulator - ferromagnetic insulator (TI-FMI) heterostructure current flows at the edge of the surface of the topological insulator when the Fermi level is gate-tuned to the surface band gap. We further induce micron-scale magnetic structures using the field coil of the SQUID and show that there emerges a chiral edge current at the magnetic domain boundary. In both cases the magnitude of the chiral edge current depends on the chemical potential rather than the applied current. Such magnetic nano-structures, which can be readily created on a TI in an arbitrary geometry, provide a versatile platform for detecting topological magnetoelectric effects and may allow the engineering of
Ion beam modification of topological insulator bismuth selenide
Sharma, P. A. Lima Sharma, A. L.; Hattar, K.; Goeke, R.; Hekmaty, M.; Stavila, V.; Erickson, K.; Medlin, D. L.; Brahlek, M.; Koirala, N.; Oh, S.
2014-12-15
We demonstrate chemical doping of a topological insulator Bi{sub 2}Se{sub 3} using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type conversion was achieved using ion implantation followed by an activation anneal in Bi{sub 2}Se{sub 3} thin films. These two sets of experiments establish the feasibility of ion implantation for chemical modification of Bi{sub 2}Se{sub 3}, a prototypical topological insulator. Ion implantation can, in principle, be used for any topological insulator. The direct implantation of dopants should allow better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation also enables the fabrication of inhomogeneously doped structures, which in turn should make possible new types of device designs.
Ion beam modification of topological insulator bismuth selenide
Sharma, Peter Anand; Sharma, A. L. Lima; Hekmaty, Michelle A.; Hattar, Khalid Mikhiel; Stavila, Vitalie; Goeke, Ronald S.; Erickson, K.; Medlin, Douglas L.; Brahlek, M.; Oh, S.; et al
2014-12-17
In this study, we demonstrate chemical doping of a topological insulator Bi2Se3 using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type conversion was achieved using ion implantation followed by an activation anneal in Bi2Se3 thin films. These two sets of experiments establish the feasibility of ion implantation for chemical modification of Bi2Se3, a prototypical topological insulator. Ion implantation can, in principle, be used for any topological insulator. The direct implantation of dopants should allow better control over carrier concentrations formore » the purposes of achieving low bulk conductivity. Ion implantation also enables the fabrication of inhomogeneously doped structures, which in turn should make possible new types of device designs.« less
Nanoscale electron transport at the surface of a topological insulator
NASA Astrophysics Data System (ADS)
Bauer, Sebastian; Bobisch, Christian A.
2016-04-01
The use of three-dimensional topological insulators for disruptive technologies critically depends on the dissipationless transport of electrons at the surface, because of the suppression of backscattering at defects. However, in real devices, defects are unavoidable and scattering at angles other than 180° is allowed for such materials. Until now, this has been studied indirectly by bulk measurements and by the analysis of the local density of states in close vicinity to defect sites. Here, we directly measure the nanoscale voltage drop caused by the scattering at step edges, which occurs if a lateral current flows along a three-dimensional topological insulator. The experiments were performed using scanning tunnelling potentiometry for thin Bi2Se3 films. So far, the observed voltage drops are small because of large contributions of the bulk to the electronic transport. However, for the use of ideal topological insulating thin films in devices, these contributions would play a significant role.
Nanoscale electron transport at the surface of a topological insulator
Bauer, Sebastian; Bobisch, Christian A.
2016-01-01
The use of three-dimensional topological insulators for disruptive technologies critically depends on the dissipationless transport of electrons at the surface, because of the suppression of backscattering at defects. However, in real devices, defects are unavoidable and scattering at angles other than 180° is allowed for such materials. Until now, this has been studied indirectly by bulk measurements and by the analysis of the local density of states in close vicinity to defect sites. Here, we directly measure the nanoscale voltage drop caused by the scattering at step edges, which occurs if a lateral current flows along a three-dimensional topological insulator. The experiments were performed using scanning tunnelling potentiometry for thin Bi2Se3 films. So far, the observed voltage drops are small because of large contributions of the bulk to the electronic transport. However, for the use of ideal topological insulating thin films in devices, these contributions would play a significant role. PMID:27098939
Ion beam modification of topological insulator bismuth selenide
Sharma, Peter Anand; Sharma, A. L. Lima; Hekmaty, Michelle A.; Hattar, Khalid Mikhiel; Stavila, Vitalie; Goeke, Ronald S.; Erickson, K.; Medlin, Douglas L.; Brahlek, M.; Oh, S.; Koirala, N.
2014-12-17
In this study, we demonstrate chemical doping of a topological insulator Bi_{2}Se_{3} using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type conversion was achieved using ion implantation followed by an activation anneal in Bi_{2}Se_{3} thin films. These two sets of experiments establish the feasibility of ion implantation for chemical modification of Bi_{2}Se_{3}, a prototypical topological insulator. Ion implantation can, in principle, be used for any topological insulator. The direct implantation of dopants should allow better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation also enables the fabrication of inhomogeneously doped structures, which in turn should make possible new types of device designs.
Tunable unconventional Kondo effect on topological insulator surfaces
NASA Astrophysics Data System (ADS)
Isaev, L.; Ortiz, G.; Vekhter, I.
2015-11-01
We study Kondo physics of a spin-1/2 impurity in electronic matter with strong spin-orbit interaction, which can be realized by depositing magnetic adatoms on the surface of a three-dimensional topological insulator. We show that magnetic properties of topological surface states and the very existence of Kondo screening strongly depend on details of the bulk material, and specifics of surface preparation encoded in time-reversal preserving boundary conditions for electronic wavefunctions. When this tunable Kondo effect occurs, the impurity spin is screened by purely orbital motion of surface electrons. This mechanism gives rise to a transverse magnetic response of the surface metal, and to spin textures that can be used to experimentally probe signatures of a Kondo resonance. Our predictions are particularly relevant for STM measurements in Pb Te -class crystalline topological insulators, but we also discuss implications for other classes of topological materials.
Berry-phase description of topological crystalline insulators
NASA Astrophysics Data System (ADS)
Alexandradinata, A.; Bernevig, B. Andrei
2016-05-01
We study a class of translational-invariant insulators with discrete rotational symmetry. These insulators have no spin-orbit coupling, and in some cases have no time-reversal symmetry either; i.e., the relevant symmetries are purely crystalline. Nevertheless, topological phases exist which are distinguished by their robust surface modes. Like many well-known topological phases, their band topology is unveiled by the crystalline analog of Berry phases, i.e., parallel transport across certain noncontractible loops in the Brillouin zone. We also identify certain topological phases without any robust surface modes; they are uniquely distinguished by parallel transport along bent loops, whose shapes are determined by the symmetry group. Our findings have experimental implications in cold-atom systems, where the crystalline Berry phase has been directly measured.
In-surface confinement of topological insulator nanowire surface states
Chen, Fan W.; Jauregui, Luis A.; Tan, Yaohua; Manfra, Michael; Klimeck, Gerhard; Chen, Yong P.; Kubis, Tillmann
2015-09-21
The bandstructures of [110] and [001] Bi{sub 2}Te{sub 3} nanowires are solved with the atomistic 20 band tight binding functionality of NEMO5. The theoretical results reveal: The popular assumption that all topological insulator (TI) wire surfaces are equivalent is inappropriate. The Fermi velocity of chemically distinct wire surfaces differs significantly which creates an effective in-surface confinement potential. As a result, topological insulator surface states prefer specific surfaces. Therefore, experiments have to be designed carefully not to probe surfaces unfavorable to the surface states (low density of states) and thereby be insensitive to the TI-effects.
Topological insulating phases from two-dimensional nodal loop semimetals
NASA Astrophysics Data System (ADS)
Li, Linhu; Araújo, Miguel A. N.
2016-10-01
Starting from a minimal model for a two-dimensional nodal loop semimetal, we study the effect of chiral mass gap terms. The resulting Dirac loop anomalous Hall insulator's Chern number is the phase-winding number of the mass gap terms on the loop. We provide simple lattice models, analyze the topological phases, and generalize a previous index characterizing topological transitions. The responses of the Dirac loop anomalous Hall and quantum spin Hall insulators to a magnetic field's vector potential are also studied both in weak- and strong-field regimes, as well as the edge states in a ribbon geometry.
Spintronics and pseudospintronics in graphene and topological insulators.
Pesin, Dmytro; MacDonald, Allan H
2012-04-23
The two-dimensional electron systems in graphene and in topological insulators are described by massless Dirac equations. Although the two systems have similar Hamiltonians, they are polar opposites in terms of spin-orbit coupling strength. We briefly review the status of efforts to achieve long spin-relaxation times in graphene with its weak spin-orbit coupling, and to achieve large current-induced spin polarizations in topological-insulator surface states that have strong spin-orbit coupling. We also comment on differences between the magnetic responses and dilute-moment coupling properties of the two systems, and on the pseudospin analogue of giant magnetoresistance in bilayer graphene.
Local currents in a 2D topological insulator.
Dang, Xiaoqian; Burton, J D; Tsymbal, Evgeny Y
2015-12-23
Symmetry protected edge states in 2D topological insulators are interesting both from the fundamental point of view as well as from the point of view of potential applications in nanoelectronics as perfectly conducting 1D channels and functional elements of circuits. Here using a simple tight-binding model and the Landauer-Büttiker formalism we explore local current distributions in a 2D topological insulator focusing on effects of non-magnetic impurities and vacancies as well as finite size effects. For an isolated edge state, we show that the local conductance decays into the bulk in an oscillatory fashion as explained by the complex band structure of the bulk topological insulator. We demonstrate that although the net conductance of the edge state is topologically protected, impurity scattering leads to intricate local current patterns. In the case of vacancies we observe vortex currents of certain chirality, originating from the scattering of current-carrying electrons into states localized at the edges of hollow regions. For finite size strips of a topological insulator we predict the formation of an oscillatory band gap in the spectrum of the edge states, the emergence of Friedel oscillations caused by an open channel for backscattering from an impurity and antiresonances in conductance when the Fermi energy matches the energy of the localized state created by an impurity. PMID:26610145
Local currents in a 2D topological insulator.
Dang, Xiaoqian; Burton, J D; Tsymbal, Evgeny Y
2015-12-23
Symmetry protected edge states in 2D topological insulators are interesting both from the fundamental point of view as well as from the point of view of potential applications in nanoelectronics as perfectly conducting 1D channels and functional elements of circuits. Here using a simple tight-binding model and the Landauer-Büttiker formalism we explore local current distributions in a 2D topological insulator focusing on effects of non-magnetic impurities and vacancies as well as finite size effects. For an isolated edge state, we show that the local conductance decays into the bulk in an oscillatory fashion as explained by the complex band structure of the bulk topological insulator. We demonstrate that although the net conductance of the edge state is topologically protected, impurity scattering leads to intricate local current patterns. In the case of vacancies we observe vortex currents of certain chirality, originating from the scattering of current-carrying electrons into states localized at the edges of hollow regions. For finite size strips of a topological insulator we predict the formation of an oscillatory band gap in the spectrum of the edge states, the emergence of Friedel oscillations caused by an open channel for backscattering from an impurity and antiresonances in conductance when the Fermi energy matches the energy of the localized state created by an impurity.
The space group classification of topological band insulators
NASA Astrophysics Data System (ADS)
Juricic, Vladimir; Slager, Robert-Jan; Mesaros, Andrej; Zaanen, Jan
2013-03-01
The existing classification of topological band insulators(TBIs) departs from time-reversal symmetry, but the role of the crystal symmetries in the physics of these topological states remained elusive. I will discuss the classification of TBIs protected not only by time-reversal, but also by space group symmetries. I find three broad classes of topological states: (a) Γ-states robust against general time-reversal invariant perturbations; (b) Translationally-active states protected from elastic scattering, but susceptible to topological crystalline disorder; (c) Valley topological insulators sensitive to the effects of non-topological and crystalline disorder. These three classes give rise to 18 different two-dimensional, and, at least 70 three-dimensional TBIs. I will show how some of these topological states can be realized in two dimensions when tight-binding M-B model, originally introduced for HgTe quantum wells, is generalized to include longer-range hoppings. Finally, experimental implications of our classification scheme with an emphasis on topological states in Sn-based materials will be discussed. V. J. acknowledges the support of the Netherlands Organization for Scientific Research (NWO).
Nakayama, K; Eto, K; Tanaka, Y; Sato, T; Souma, S; Takahashi, T; Segawa, Kouji; Ando, Yoichi
2012-12-01
We have performed angle-resolved photoemission spectroscopy on (PbSe)(5)(Bi(2)Se(3))(3m), which forms a natural multilayer heterostructure consisting of a topological insulator and an ordinary insulator. For m=2, we observed a gapped Dirac-cone state within the bulk band gap, suggesting that the topological interface states are effectively encapsulated by block layers; furthermore, it was found that the quantum confinement effect of the band dispersions of Bi(2)Se(3) layers enhances the effective bulk band gap to 0.5 eV, the largest ever observed in topological insulators. For m=1, the Dirac-like state is completely gone, suggesting the disappearance of the band inversion in the Bi(2)Se(3) unit. These results demonstrate that utilization of naturally occurring heterostructures is a new promising strategy for manipulating the topological states and realizing exotic quantum phenomena. PMID:23368240
Andreev bound states and current-phase relations in three-dimensional topological insulators
NASA Astrophysics Data System (ADS)
Snelder, M.; Veldhorst, M.; Golubov, A. A.; Brinkman, A.
2013-03-01
To guide the search for the Majorana fermion, we theoretically study superconductor/topological-insulator/superconductor (S/TI/S) junctions in an experimentally relevant regime. We find that the striking features present in these systems, including the doubled periodicity of the Andreev bound states (ABSs) due to tunneling via Majorana states, can still be present at high electron densities. We show that via the inclusion of magnetic layers, this 4π periodic ABS can still be observed in three-dimensional (3D) topological insulators, where finite angle incidence usually results in the opening of a gap at zero energy and hence results in a 2π periodic ABS. Furthermore, we study the Josephson-junction characteristics and find that the gap size can be controlled and decreased by tuning the magnetization direction and amplitude. These findings pave the way for designing experiments on S/3DTI/S junctions.
NASA Astrophysics Data System (ADS)
Huemiller, Erik D.; Finck, Aaron D. K.; Kurter, Cihan; van Harlingen, Dale J.
2015-03-01
We are exploring the nature of the proximity-induced order in 3D topological insulators in contact with an s-wave superconductor by phase-sensitive Josephson interferometry. It is predicted that the proximity region should have p-wave pairing symmetry with spin-dependent chiral components. To test this, we compare the behavior of edge and corner junctions on a patterned bilayer of Nb and Bi2Se3 to determine the phase anisotropy that should reflect a mixture of the s and p components. The alternate approach discussed will be measurement of the supercurrent properties in arrays of superconducting islands patterned on top of the topological insulator, which is sensitive to both the current-phase relation of the junctions and the array geometry. This work supported by the National Science Foundation under Grant NSF-DMR14-11067.
Charge and spin fractionalization in strongly correlated topological insulators.
Nikolić, Predrag
2013-01-16
We construct an effective topological Landau-Ginzburg theory that describes general SU(2) incompressible quantum liquids of strongly correlated particles in two spatial dimensions. This theory characterizes the fractionalization of quasiparticle quantum numbers and statistics in relation to the topological ground-state symmetries, and generalizes the Chern-Simons, BF ('background field') and hierarchical effective gauge theories to an arbitrary representation of the SU(2) symmetry group. We mainly focus on fractional topological insulators with time-reversal symmetry, which are treated as SU(2) generalizations of the quantum Hall effect.
Topological magnetic crystalline insulators and co-representation theory
NASA Astrophysics Data System (ADS)
Zhang, Ruixing; Liu, Chaoxing
2014-03-01
We introduce a new type of topological insulator protected by magnetic group symmetry, which is a combined symmetry of point group symmetry and time reversal symmetry. Based on the Herring rule of the co-representation theory of magnetic group, we systematically show that systems with certain magnetic group symmetries can have Kramers'-like degeneracies and admit a Z2 classification. We establish a tight-binding model describing a layered magnetic structure with combined C4 rotation and time reversal symmetry. We show that this model can support non-trivial topological phases by calculating its gapless surface states and defining its Z2 topological invariant.
Anomalous Topological Phases and Unpaired Dirac Cones in Photonic Floquet Topological Insulators.
Leykam, Daniel; Rechtsman, M C; Chong, Y D
2016-07-01
We propose a class of photonic Floquet topological insulators based on staggered helical lattices and an efficient numerical method for calculating their Floquet band structure. The lattices support anomalous Floquet topological insulator phases with vanishing Chern number and tunable topological transitions. At the critical point of the topological transition, the band structure hosts a single unpaired Dirac cone, which yields a variety of unusual transport effects: a discrete analogue of conical diffraction, weak antilocalization not limited by intervalley scattering, and suppression of Anderson localization. Unlike previous designs, the effective gauge field strength can be controlled via lattice parameters such as the interhelix distance, significantly reducing radiative losses and enabling applications such as switchable topological waveguiding.
Anomalous Topological Phases and Unpaired Dirac Cones in Photonic Floquet Topological Insulators
NASA Astrophysics Data System (ADS)
Leykam, Daniel; Rechtsman, M. C.; Chong, Y. D.
2016-07-01
We propose a class of photonic Floquet topological insulators based on staggered helical lattices and an efficient numerical method for calculating their Floquet band structure. The lattices support anomalous Floquet topological insulator phases with vanishing Chern number and tunable topological transitions. At the critical point of the topological transition, the band structure hosts a single unpaired Dirac cone, which yields a variety of unusual transport effects: a discrete analogue of conical diffraction, weak antilocalization not limited by intervalley scattering, and suppression of Anderson localization. Unlike previous designs, the effective gauge field strength can be controlled via lattice parameters such as the interhelix distance, significantly reducing radiative losses and enabling applications such as switchable topological waveguiding.
Nonlinear optical and optoelectronic studies of topological insulator surfaces
NASA Astrophysics Data System (ADS)
McIver, James W.
Since their experimental discovery in 2008, topological insulators have been catapulted to the forefront of condensed matter physics research owing to their potential to realize both exciting new technologies as well as novel electronic phases that are inaccessible in any other material class. Their exotic properties arise from a rare quantum organization of its electrons called "topological order,'' which evades the conventional broken symmetry based-classification scheme used to categorize nearly every other state of ordered matter. Instead, topologically ordered phases are classified by topological invariants, which characterize the phase of an electron's wavefunction as it moves through momentum space. When a topologically ordered phase is interfaced with an ordinary phase, such as the vacuum, a novel metallic state appears at their shared boundary. In topological insulators, this results in the formation of a two-dimensional metallic state that spans all of its surfaces. The surface state electronic spectrum is characterized by a single linearly dispersing and helically spin-polarized Dirac cone that is robust against disorder. The helical nature of the surface Dirac cone is highly novel because the Dirac electrons carry a net magnetic moment and are capable of transporting 100% spin-polarized electrical currents, which are the long-sought electronic properties needed for many spin-based electronic applications. However, owing to the small bulk band gap and intrinsic electronic doping inherent to these materials, isolating the surface electronic response from the bulk has proven to be a major experimental obstacle. In this thesis, we demonstrate the means by which light can be used to isolate and study the surface electronic response of topological insulators using optoelectronic and nonlinear optical techniques. In chapter 1, we overview the physics of topological order and topological insulators. In chapter 2, we show how polarized light can be used to
Experimental Discovery of Topological Insulators and Related Superconductors
Hasan, M Zahid
2010-09-15
Most quantum states of condensed matter are categorized by the symmetries they break. The remarkable discovery of charge Quantum Hall effects (1980s) revealed that there exists an organizational principle of matter based only on the topological distinctions, but in the presence of time-reversal symmetry breaking. In the past few years, theoretical developments suggest that new classes of topological states of matter might exist that are purely topological in nature in the sense that they do not break time-reversal symmetry, and hence can be realized without any applied magnetic field: "Quantum Hall-like effects without Magnetic Fields." This talk describes our discovery of new topologically ordered states of matter (topological insulators) and discusses the unusual electro-magnetic, spin, and superconducting properties this novel phase of quantum matter might exhibit and their potential applications.
Anomalous Phase Shift of Quantum Oscillations in 3D Topological Semimetals
NASA Astrophysics Data System (ADS)
Wang, C. M.; Lu, Hai-Zhou; Shen, Shun-Qing
2016-08-01
Berry phase physics is closely related to a number of topological states of matter. Recently discovered topological semimetals are believed to host a nontrivial π Berry phase to induce a phase shift of ±1 /8 in the quantum oscillation (+ for hole and - for electron carriers). We theoretically study the Shubnikov-de Haas oscillation of Weyl and Dirac semimetals, taking into account their topological nature and inter-Landau band scattering. For a Weyl semimetal with broken time-reversal symmetry, the phase shift is found to change nonmonotonically and go beyond known values of ±1 /8 and ±5 /8 , as a function of the Fermi energy. For a Dirac semimetal or paramagnetic Weyl semimetal, time-reversal symmetry leads to a discrete phase shift of ±1 /8 or ±5 /8 . Different from the previous works, we find that the topological band inversion can lead to beating patterns in the absence of Zeeman splitting. We also find the resistivity peaks should be assigned integers in the Landau index plot. Our findings may account for recent experiments in Cd2 As3 and should be helpful for exploring the Berry phase in various 3D systems.
Anomalous Phase Shift of Quantum Oscillations in 3D Topological Semimetals.
Wang, C M; Lu, Hai-Zhou; Shen, Shun-Qing
2016-08-12
Berry phase physics is closely related to a number of topological states of matter. Recently discovered topological semimetals are believed to host a nontrivial π Berry phase to induce a phase shift of ±1/8 in the quantum oscillation (+ for hole and - for electron carriers). We theoretically study the Shubnikov-de Haas oscillation of Weyl and Dirac semimetals, taking into account their topological nature and inter-Landau band scattering. For a Weyl semimetal with broken time-reversal symmetry, the phase shift is found to change nonmonotonically and go beyond known values of ±1/8 and ±5/8, as a function of the Fermi energy. For a Dirac semimetal or paramagnetic Weyl semimetal, time-reversal symmetry leads to a discrete phase shift of ±1/8 or ±5/8. Different from the previous works, we find that the topological band inversion can lead to beating patterns in the absence of Zeeman splitting. We also find the resistivity peaks should be assigned integers in the Landau index plot. Our findings may account for recent experiments in Cd_{2}As_{3} and should be helpful for exploring the Berry phase in various 3D systems. PMID:27563993
NASA Astrophysics Data System (ADS)
Ashalley, Eric; Chen, Haiyuan; Tong, Xin; Li, Handong; Wang, Zhiming M.
2015-05-01
Bismuth telluride is known to wield unique properties for a wide range of device applications. However, as devices migrate to the nanometer scale, significant amount of studies are being conducted to keep up with the rapidly growing nanotechnological field. Bi2Te3 possesses distinctive properties at the nanometer level from its bulk material. Therefore, varying synthesis and characterization techniques are being employed for the realization of various Bi2Te3 nanostructures in the past years. A considerable number of these works have aimed at improving the thermoelectric (TE) figure-of-merit (ZT) of the Bi2Te3 nanostructures and drawing from their topological insulating properties. This paper reviews the various Bi2Te3 and Bi2Te3-based nanostructures realized via theoretical and experimental procedures. The study probes the preparation techniques, TE properties and the topological insulating effects of 0D, 1D, 2D and Bi2Te3 nanocomposites. With several applications as a topological insulator (TI), the topological insulating effect of the Bi2Te3 is reviewed in detail with the time reversal symmetry (TRS) and surface state spins which characterize TIs. Schematics and preparation methods for the various nanostructural dimensions are accordingly categorized.
NASA Astrophysics Data System (ADS)
Kalvin, Alan D.; Cutting, Court B.; Haddad, Betsy; Noz, Marilyn E.
1991-06-01
Three-dimensional (3D) medical imaging deals with the visualization, manipulation, and measuring of objects in 3D medical images. So far, research efforts have concentrated primarily on visualization, using well-developed methods from computer graphics. Very little has been achieved in developing techniques for manipulating medical objects, or for extracting quantitative measurements from them beyond volume calculation (by counting voxels), and computing distances and angles between manually located surface points. A major reason for the slow pace in the development of manipulation and quantification methods lies with the limitations of current algorithms for constructing surfaces from 3D solid objects. We show that current surface construction algorithms either (a) do not construct valid surface descriptions of solid objects or (b) produce surface representations that are not particularly suitable for anything other than visualization. We present ALLIGATOR, a new surface construction algorithm that produces valid, topologically connected surface representations of solid objects. We have developed a modeling system based on the surface representations created by ALLIGATOR that is suitable for developing algorithms to visualize, manipulate, and quantify 3D medical objects. Using this modeling system we have developed a method for efficiently computing principle curvatures and directions on surfaces. These measurements form the basis for a new metric system being developed for morphometrics. The modeling system is also being used in the development of systems for quantitative pre-surgical planning and surgical augmentation.
Electronic structures of topological insulators with non-conventional terminations
NASA Astrophysics Data System (ADS)
Zhu, Xiegang; Zhang, Yun; Feng, Wei; Yuan, Bingkai; Lai, Xinchun
Until now, most works on topological insulators focus on the natural cleaving surfaces, i.e., conventional terminations. However, researches on the non-conventional surfaces of TIs are hindered due to the difficulties in preparation of those surfaces and the existence of large number of dangling bonds on those surfaces. What is more, due to the complications in the surface lattice structures, DFT calculations on the non-conventional surfaces are not favorable. In this work, by adopting the tight binding method based Green's Function, we systematically studied the surface states of non-conventional terminations of topological insulator Bi2Te3 and Bi2Se3. By using MBE, we manage to prepare topological insulator Bi2Te3 thin films with fractional quintuple layer (FQL) termination. Scanning tunneling microscopy (STM) reveals that the as-grown Bi2Te3 thin films may not necessarily terminate at the Van der Waals gap between two adjacent quintuple layers. The electronic structures of the FQL surfaces are studied in combination with quasi-particle interference (QPI) by scanning tunneling spectroscopy (STS). Our results suggest that the topological nature of SSs be preserved on non-conventional terminations. The robustness of the topological SSs is also demonstrated. Work supported by Grants from NSFC11404298, CAEP2014B0302045.
NASA Astrophysics Data System (ADS)
Liu, Weizhe; Adroguer, Pierre; Bi, Xintao; Hankiewicz, Ewelina; Culcer, Dimitrie
2015-03-01
Topological insulators (TIs) have revolutionized our understanding of insulating behaviour. Three-dimensional TIs are insulators in the bulk but conducting along their surfaces. Much of recent researches on 3D TIs focus on overcoming the transport bottleneck, namely the fact that surface transport is overwhelmed by bulk transport stemming from unintentional doping. The key to overcoming this bottleneck is identifying unambiguous signatures of surface state transport. We will discuss one such signature: weak antilocalization, meaning that coherent backscattering increases the electrical conductivity. The features of this effect, however, are rather subtle, because in TI the impurities have also strong spin-orbit coupling. I will show that spin-orbit coupled impurities introduce an additional time scale, which is expected to be shorter than the dephasing time, and the resulting conductivity has a distinguished part with linear dependent on the carrier number density. The result we predict is directly observable experimentally.
Unconventional quantum Hall effect in Floquet topological insulators.
Tahir, M; Vasilopoulos, P; Schwingenschlögl, U
2016-09-28
We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is governed by the low-energy dynamics of a single surface. An exchange of symmetric and antisymmetric surface states occurs by reversing the light's polarization. We find a novel quantum Hall state in which the zeroth Landau level undergoes a phase transition from a trivial insulator state, with Hall conductivity [Formula: see text] at zero Fermi energy, to a Hall insulator state with [Formula: see text]. These findings open new possibilities for experimentally realizing nontrivial quantum states and unusual quantum Hall plateaus at [Formula: see text].
Unconventional quantum Hall effect in Floquet topological insulators.
Tahir, M; Vasilopoulos, P; Schwingenschlögl, U
2016-09-28
We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is governed by the low-energy dynamics of a single surface. An exchange of symmetric and antisymmetric surface states occurs by reversing the light's polarization. We find a novel quantum Hall state in which the zeroth Landau level undergoes a phase transition from a trivial insulator state, with Hall conductivity [Formula: see text] at zero Fermi energy, to a Hall insulator state with [Formula: see text]. These findings open new possibilities for experimentally realizing nontrivial quantum states and unusual quantum Hall plateaus at [Formula: see text]. PMID:27460419
Unconventional quantum Hall effect in Floquet topological insulators
NASA Astrophysics Data System (ADS)
Tahir, M.; Vasilopoulos, P.; Schwingenschlögl, U.
2016-09-01
We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is governed by the low-energy dynamics of a single surface. An exchange of symmetric and antisymmetric surface states occurs by reversing the light’s polarization. We find a novel quantum Hall state in which the zeroth Landau level undergoes a phase transition from a trivial insulator state, with Hall conductivity {σyx}=0 at zero Fermi energy, to a Hall insulator state with {σyx}={{e}2}/2h . These findings open new possibilities for experimentally realizing nontrivial quantum states and unusual quantum Hall plateaus at (+/- 1/2,+/- 3/2,+/- 5/2,...){{e}2}/h .
Finite-temperature conductivity and magnetoconductivity of topological insulators.
Lu, Hai-Zhou; Shen, Shun-Qing
2014-04-11
The electronic transport experiments on topological insulators exhibit a dilemma. A negative cusp in magnetoconductivity is widely believed as a quantum transport signature of the topological surface states, which are immune from localization and exhibit the weak antilocalization. However, the measured conductivity drops logarithmically when lowering temperature, showing a typical feature of the weak localization as in ordinary disordered metals. Here, we present a conductivity formula for massless and massive Dirac fermions as a function of magnetic field and temperature, by taking into account the electron-electron interaction and quantum interference simultaneously. The formula reconciles the dilemma by explicitly clarifying that the temperature dependence of the conductivity is dominated by the interaction, while the magnetoconductivity is mainly contributed by the quantum interference. The theory paves the road to quantitatively study the transport in topological insulators, and can be extended to other two-dimensional Dirac-like systems, such as graphene, transition metal dichalcogenides, and silicene.
Quantum transport in magnetic topological insulator thin films.
Lu, Hai-Zhou; Zhao, An; Shen, Shun-Qing
2013-10-01
The experimental observation of the long-sought quantum anomalous Hall effect was recently reported in magnetically doped topological insulator thin films [Chang et al., Science 340, 167 (2013)]. An intriguing observation is a rapid decrease from the quantized plateau in the Hall conductance, accompanied by a peak in the longitudinal conductance as a function of the gate voltage. Here, we present a quantum transport theory with an effective model for magnetic topological insulator thin films. The good agreement between theory and experiment reveals that the measured transport originates from a topologically nontrivial conduction band which, near its band edge, has concentrated Berry curvature and a local maximum in group velocity. The indispensable roles of the broken structure inversion and particle-hole symmetries are also revealed. The results are instructive for future experiments and transport studies based on first-principles calculations.
Transport signatures of surface potentials on three-dimensional topological insulators
NASA Astrophysics Data System (ADS)
Roy, Sthitadhi; Das, Sourin
2016-02-01
The spin-momentum-locked nature of the robust surface states of three-dimensional topological insulators (3D TIs) makes them promising candidates for spintronics applications. Surface potentials which respect time-reversal symmetry can exist at the surface between a 3D TI and the trivial vacuum. These potentials can distort the spin texture of the surface states while retaining their gapless nature. In this work, the effect of all such surface potentials on the spin textures is studied. Since a tunnel magnetoresistance signal carries the information of the spin texture, it is proposed that spin-polarized tunneling of electrons to a 3D TI surface can be used to uniquely identify the surface potentials and quantitatively characterize them.
NASA Astrophysics Data System (ADS)
He, Yuan-Yao; Wu, Han-Qing; Meng, Zi Yang; Lu, Zhong-Yi
2016-05-01
The aim of this series of two papers is to discuss topological invariants for interacting topological insulators (TIs). In the first paper (I), we provide a paradigm of efficient numerical evaluation scheme for topological invariants, in which we demystify the procedures and techniques employed in calculating Z2 invariant and spin Chern number via zero-frequency single-particle Green's function in quantum Monte Carlo (QMC) simulations. Here we introduce an interpolation process to overcome the ubiquitous finite-size effect, so that the calculated spin Chern number shows ideally quantized values. We also show that making use of symmetry properties of the underlying systems can greatly reduce the computational effort. To demonstrate the effectiveness of our numerical evaluation scheme, especially the interpolation process, for calculating topological invariants, we apply it on two independent two-dimensional models of interacting topological insulators. In the subsequent paper (II), we apply the scheme developed here to wider classes of models of interacting topological insulators, for which certain limitation of constructing topological invariant via single-particle Green's functions will be presented.
Spatially-protected Topology and Group Cohomology in Band Insulators
NASA Astrophysics Data System (ADS)
Alexandradinata, A.
This thesis investigates band topologies which rely fundamentally on spatial symmetries. A basic geometric property that distinguishes spatial symmetry regards their transformation of the spatial origin. Point groups consist of spatial transformations that preserve the spatial origin, while un-split extensions of the point groups by spatial translations are referred to as nonsymmorphic space groups. The first part of the thesis addresses topological phases with discretely-robust surface properties: we introduce theories for the Cnv point groups, as well as certain nonsymmorphic groups that involve glide reflections. These band insulators admit a powerful characterization through the geometry of quasimomentum space; parallel transport in this space is represented by the Wilson loop. The non-symmorphic topology we study is naturally described by a further extension of the nonsymmorphic space group by quasimomentum translations (the Wilson loop), thus placing real and quasimomentum space on equal footing -- here, we introduce the language of group cohomology into the theory of band insulators. The second part of the thesis addresses topological phases without surface properties -- their only known physical consequences are discrete signatures in parallel transport. We provide two such case studies with spatial-inversion and discrete-rotational symmetries respectively. One lesson learned here regards the choice of parameter loops in which we carry out transport -- the loop must be chosen to exploit the symmetry that protects the topology. While straight loops are popular for their connection with the geometric theory of polarization, we show that bent loops also have utility in topological band theory.
Design of Chern and Mott insulators in buckled 3 d oxide honeycomb lattices
NASA Astrophysics Data System (ADS)
Doennig, David; Baidya, Santu; Pickett, Warren E.; Pentcheva, Rossitza
2016-04-01
Perovskite (La X O3 )2/(LaAlO3)4(111) superlattices with X spanning the entire 3 d transition-metal series combine the strongly correlated, multiorbital nature of electrons in transition-metal oxides with a honeycomb lattice as a key feature. Based on density functional theory calculations including strong interaction effects, we establish trends in the evolution of electronic states as a function of several control parameters: band filling, interaction strength, spin-orbit coupling (SOC), and lattice instabilities. Competition between local pseudocubic and global trigonal symmetry as well as the additional flexibility provided by the magnetic and spin degrees of freedom of 3 d ions lead to a broad array of distinctive broken-symmetry ground states not accessible for the (001)-growth direction, offering a platform to design two-dimensional electronic functionalities. Constraining the symmetry between the two triangular sublattices causes X =Mn , Co, and Ti to emerge as Chern insulators driven by SOC. For X =Mn we illustrate how interaction strength and lattice distortions can tune these systems between a Dirac semimetal, a Chern and a trivial Mott insulator.
Fermi-Level Tuning of Topological Insulator Thin Films
NASA Astrophysics Data System (ADS)
Aitani, Masaki; Sakamoto, Yusuke; Hirahara, Toru; Yamada, Manabu; Miyazaki, Hidetoshi; Matsunami, Masaharu; Kimura, Shin-ichi; Hasegawa, Shuji
2013-11-01
Topological insulators are insulating materials but have metallic edge states with peculiar properties. They are considered to be promising for the development of future low energy consumption nano-electronic devices. However, there is a major problem: Naturally grown materials are not truly insulating owing to defects in their crystal structure. In the present study, we have examined the electronic structure and transport properties of topological insulator ultrathin Bi2Te3 films by angle-resolved photoemission spectroscopy and in situ transport measurements. To realize a truly bulk insulating film, we tried to tune the Fermi-level position using two methods. The first of these, i.e., changing the Si substrate temperature during film growth (350-450 K) to reduce the defects in the grown films, had some effect in reducing the bulk residual carriers, but we could not fabricate a film that showed only the surface states crossing the Fermi level. The second method we employed was to incorporate Pb atoms during film growth since Pb has one less electron than Bi. When the films were grown at around 350 K, we observed a systematic shift in the Fermi level and obtained a bulk insulating film, although it was not possible to move the Dirac point just at the Fermi level. The change in the measured film conductivity was consistent with the shift in the Fermi level and suggested the detection of the surface-state conductivity. For films grown at a higher substrate temperature (450 K), the Fermi level could be tuned only slightly and a bulk n-type film was obtained. Pb incorporation changes the shape of the Dirac cone, suggesting the formation of a stoichiometric ternary alloy of Bi, Pb, and Te, which is another topological insulator.
Sutradhar, Alok; Park, Jaejong; Carrau, Diana; Nguyen, Tam H; Miller, Michael J; Paulino, Glaucio H
2016-07-01
Large craniofacial defects require efficient bone replacements which should not only provide good aesthetics but also possess stable structural function. The proposed work uses a novel multiresolution topology optimization method to achieve the task. Using a compliance minimization objective, patient-specific bone replacement shapes can be designed for different clinical cases that ensure revival of efficient load transfer mechanisms in the mid-face. In this work, four clinical cases are introduced and their respective patient-specific designs are obtained using the proposed method. The optimized designs are then virtually inserted into the defect to visually inspect the viability of the design . Further, once the design is verified by the reconstructive surgeon, prototypes are fabricated using a 3D printer for validation. The robustness of the designs are mechanically tested by subjecting them to a physiological loading condition which mimics the masticatory activity. The full-field strain result through 3D image correlation and the finite element analysis implies that the solution can survive the maximum mastication of 120 lb. Also, the designs have the potential to restore the buttress system and provide the structural integrity. Using the topology optimization framework in designing the bone replacement shapes would deliver surgeons new alternatives for rather complicated mid-face reconstruction. PMID:26660897
Fast and Memory-Efficient Topological Denoising of 2D and 3D Scalar Fields.
Günther, David; Jacobson, Alec; Reininghaus, Jan; Seidel, Hans-Peter; Sorkine-Hornung, Olga; Weinkauf, Tino
2014-12-01
Data acquisition, numerical inaccuracies, and sampling often introduce noise in measurements and simulations. Removing this noise is often necessary for efficient analysis and visualization of this data, yet many denoising techniques change the minima and maxima of a scalar field. For example, the extrema can appear or disappear, spatially move, and change their value. This can lead to wrong interpretations of the data, e.g., when the maximum temperature over an area is falsely reported being a few degrees cooler because the denoising method is unaware of these features. Recently, a topological denoising technique based on a global energy optimization was proposed, which allows the topology-controlled denoising of 2D scalar fields. While this method preserves the minima and maxima, it is constrained by the size of the data. We extend this work to large 2D data and medium-sized 3D data by introducing a novel domain decomposition approach. It allows processing small patches of the domain independently while still avoiding the introduction of new critical points. Furthermore, we propose an iterative refinement of the solution, which decreases the optimization energy compared to the previous approach and therefore gives smoother results that are closer to the input. We illustrate our technique on synthetic and real-world 2D and 3D data sets that highlight potential applications. PMID:26356972
Sutradhar, Alok; Park, Jaejong; Carrau, Diana; Nguyen, Tam H; Miller, Michael J; Paulino, Glaucio H
2016-07-01
Large craniofacial defects require efficient bone replacements which should not only provide good aesthetics but also possess stable structural function. The proposed work uses a novel multiresolution topology optimization method to achieve the task. Using a compliance minimization objective, patient-specific bone replacement shapes can be designed for different clinical cases that ensure revival of efficient load transfer mechanisms in the mid-face. In this work, four clinical cases are introduced and their respective patient-specific designs are obtained using the proposed method. The optimized designs are then virtually inserted into the defect to visually inspect the viability of the design . Further, once the design is verified by the reconstructive surgeon, prototypes are fabricated using a 3D printer for validation. The robustness of the designs are mechanically tested by subjecting them to a physiological loading condition which mimics the masticatory activity. The full-field strain result through 3D image correlation and the finite element analysis implies that the solution can survive the maximum mastication of 120 lb. Also, the designs have the potential to restore the buttress system and provide the structural integrity. Using the topology optimization framework in designing the bone replacement shapes would deliver surgeons new alternatives for rather complicated mid-face reconstruction.
Spin Generation Via Bulk Spin Current in Three Dimensional Topological Insulators
NASA Astrophysics Data System (ADS)
Peng, Xingyue
To date, charge transport and spin generation in three-dimensional topological insulators (3D TIs) are primarily modeled as a single-surface phenomenon. We propose a new mechanism of spin generation where the role of the insulating yet topologically non-trivial bulk becomes explicit: an external electric field creates a transverse pure spin current through the bulk of a 3D TI, which transports spins between the top and bottom surfaces and leads to spin accumulation on both. The surface spin density and charge current are then proportional to the spin relaxation time, which for a sufficiently high disorder level can be extended by nonmagnetic scattering analogous to the Dyakonov-Perel spin relaxation mechanism. This new spin generation mechanism suggests a distinct and practical strategy for the enhancement of surface spin polarization by increasing nonmagnetic impurity concentration. Numerical results obtained by coherent potential approximation (CPA) based on a 4-band lattice model confirm that this spin generation mechanism originates from the unique topological connection of the top and bottom surfaces and is absent in other two dimensional systems such as graphene, even though they possess a similar Dirac cone-type dispersion.
NASA Astrophysics Data System (ADS)
He, Yuan-Yao; Wu, Han-Qing; Meng, Zi Yang; Lu, Zhong-Yi
2016-05-01
Topological phase transitions in free fermion systems can be characterized by the closing of single-particle gap and the change in topological invariants. However, in the presence of electronic interactions, topological phase transitions can be more complicated. In paper I of this series [Phys. Rev. B 93, 195163 (2016), 10.1103/PhysRevB.93.195163], we have proposed an efficient scheme to evaluate the topological invariants based on the single-particle Green's function formalism. Here, in paper II, we demonstrate several interaction-driven topological phase transitions (TPTs) in two-dimensional (2D) interacting topological insulators (TIs) via large-scale quantum Monte Carlo (QMC) simulations, based on the scheme of evaluating topological invariants presented in paper I. Across these transitions, the defining symmetries of the TIs have been neither explicitly nor spontaneously broken. In the first two models, the topological invariants calculated from the Green's function formalism succeed in characterizing the topologically distinct phases and identifying interaction-driven TPTs. However, in the other two models, we find that the single-particle gap does not close and the topological invariants constructed from the single-particle Green's function acquire no change across the TPTs. Unexpected breakdown of the Green's function formalism in constructing the topological invariants is thus discovered. We thence classify the topological phase transitions in interacting TIs into two categories in practical computation: Those that have noninteracting correspondence can be characterized successfully by the topological invariants constructed from the Green's functions, while for the others that do not have noninteracting correspondence, the Green's function formalism experiences a breakdown, but more interesting and exciting phenomena, such as emergent collective critical modes at the transition, arise. Discussion on the success and breakdown of topological invariants
Gigantic Surface Lifetime of an Intrinsic Topological Insulator
NASA Astrophysics Data System (ADS)
Neupane, Madhab; Xu, Su-Yang; Ishida, Yukiaki; Jia, Shuang; Fregoso, Benjamin M.; Liu, Chang; Belopolski, Ilya; Bian, Guang; Alidoust, Nasser; Durakiewicz, Tomasz; Galitski, Victor; Shin, Shik; Cava, Robert J.; Hasan, M. Zahid
2015-09-01
The interaction between light and novel two-dimensional electronic states holds promise to realize new fundamental physics and optical devices. Here, we use pump-probe photoemission spectroscopy to study the optically excited Dirac surface states in the bulk-insulating topological insulator Bi2Te2Se and reveal optical properties that are in sharp contrast to those of bulk-metallic topological insulators. We observe a gigantic optical lifetime exceeding 4 μ s (1 μ s =10-6 s ) for the surface states in Bi2Te2Se , whereas the lifetime in most topological insulators, such as Bi2Se3 , has been limited to a few picoseconds (1 ps =10-12 s ). Moreover, we discover a surface photovoltage, a shift of the chemical potential of the Dirac surface states, as large as 100 mV. Our results demonstrate a rare platform to study charge excitation and relaxation in energy and momentum space in a two-dimensional system.
Effective low-energy theory for superconducting topological insulators.
Hao, Lei; Lee, Ting-Kuo
2015-03-18
Candidate pairings of superconducting topological insulators support interesting surface Andreev bound states (SABSs) known as Majorana fermions. As these materials are described by a two-orbital Bernevig-Hughes-Zhang type model, a general understanding of the low-energy physics such as the possible kinds of SABSs are difficult. By virtue of an analogy between a topological insulator and a time reversal invariant topological superconductor, we propose a simple and intuitive method of constructing the low-energy effective models for superconducting topological insulators like CuxBi2Se3. Depending on the value of the chemical potential and for experimentally relevant model parameters, the low-energy properties of these superconductors are shown to be determined by one copy or two copies of single-orbital effective models. If the effective pairing potential shows sign reversal upon reflection by the surface, one Kramers' pair or two Kramers' pairs of SABSs are expected to appear. Explicit analytical calculations in terms of the effective low energy model reproduce the dispersions of the numerically confirmed two pairs of SABSs for a commonly studied pairing.
Magnetic gating of a 2D topological insulator.
Dang, Xiaoqian; Burton, J D; Tsymbal, Evgeny Y
2016-09-28
Deterministic control of transport properties through manipulation of spin states is one of the paradigms of spintronics. Topological insulators offer a new playground for exploring interesting spin-dependent phenomena. Here, we consider a ferromagnetic 'gate' representing a magnetic adatom coupled to the topologically protected edge state of a two-dimensional (2D) topological insulator to modulate the electron transmission of the edge state. Due to the locked spin and wave vector of the transport electrons the transmission across the magnetic gate depends on the mutual orientation of the adatom magnetic moment and the current. If the Fermi energy matches an exchange-split bound state of the adatom, the electron transmission can be blocked due to the full back scattering of the incident wave. This antiresonance behavior is controlled by the adatom magnetic moment orientation so that the transmission of the edge state can be changed from 1 to 0. Expanding this consideration to a ferromagnetic gate representing a 1D chain of atoms shows a possibility to control the spin-dependent current of a strip of a 2D topological insulator by magnetization orientation of the ferromagnetic gate. PMID:27437829
Magnetic gating of a 2D topological insulator
NASA Astrophysics Data System (ADS)
Dang, Xiaoqian; Burton, J. D.; Tsymbal, Evgeny Y.
2016-09-01
Deterministic control of transport properties through manipulation of spin states is one of the paradigms of spintronics. Topological insulators offer a new playground for exploring interesting spin-dependent phenomena. Here, we consider a ferromagnetic ‘gate’ representing a magnetic adatom coupled to the topologically protected edge state of a two-dimensional (2D) topological insulator to modulate the electron transmission of the edge state. Due to the locked spin and wave vector of the transport electrons the transmission across the magnetic gate depends on the mutual orientation of the adatom magnetic moment and the current. If the Fermi energy matches an exchange-split bound state of the adatom, the electron transmission can be blocked due to the full back scattering of the incident wave. This antiresonance behavior is controlled by the adatom magnetic moment orientation so that the transmission of the edge state can be changed from 1 to 0. Expanding this consideration to a ferromagnetic gate representing a 1D chain of atoms shows a possibility to control the spin-dependent current of a strip of a 2D topological insulator by magnetization orientation of the ferromagnetic gate.
NASA Astrophysics Data System (ADS)
Kim, Heejae; Murakami, Shuichi
2016-05-01
We construct a theory describing phase transitions between the spinless topological crystalline insulator phase with glide symmetry and a normal insulator phase. We show that a spinless Weyl semimetal phase should intervene between these two phases. Here, because all the bands are free from degeneracy in general, a gap closing between a single conduction band and a single valence band at phase transition generally gives rise to a pair creation of Weyl nodes; hence the Weyl semimetal phase naturally appears. We show the relationship between the change of the Z2 topological number when the system goes through the Weyl semimetal phase, and the trajectory of the Weyl nodes.
Estimation of the thermal conductivity of hemp based insulation material from 3D tomographic images
NASA Astrophysics Data System (ADS)
El-Sawalhi, R.; Lux, J.; Salagnac, P.
2016-08-01
In this work, we are interested in the structural and thermal characterization of natural fiber insulation materials. The thermal performance of these materials depends on the arrangement of fibers, which is the consequence of the manufacturing process. In order to optimize these materials, thermal conductivity models can be used to correlate some relevant structural parameters with the effective thermal conductivity. However, only a few models are able to take into account the anisotropy of such material related to the fibers orientation, and these models still need realistic input data (fiber orientation distribution, porosity, etc.). The structural characteristics are here directly measured on a 3D tomographic image using advanced image analysis techniques. Critical structural parameters like porosity, pore and fiber size distribution as well as local fiber orientation distribution are measured. The results of the tested conductivity models are then compared with the conductivity tensor obtained by numerical simulation on the discretized 3D microstructure, as well as available experimental measurements. We show that 1D analytical models are generally not suitable for assessing the thermal conductivity of such anisotropic media. Yet, a few anisotropic models can still be of interest to relate some structural parameters, like the fiber orientation distribution, to the thermal properties. Finally, our results emphasize that numerical simulations on 3D realistic microstructure is a very interesting alternative to experimental measurements.
Wang, Jianwei; Zhang, Yong
2016-01-01
When coming to identify new 2D materials, our intuition would suggest us to look from layered instead of 3D materials. However, since graphite can be hypothetically derived from diamond by stretching it along its [111] axis, many 3D materials can also potentially be explored as new candidates for 2D materials. Using a density functional theory, we perform a systematic study over the common Group IV, III–V, and II–VI semiconductors along different deformation paths to reveal new structures that are topologically connected to but distinctly different from the 3D parent structure. Specifically, we explore two major phase transition paths, originating respectively from wurtzite and NiAs structure, by applying compressive and tensile strain along the symmetry axis, and calculating the total energy changes to search for potential metastable states, as well as phonon spectra to examine the structural stability. Each path is found to further split into two branches under tensile strain–low buckled and high buckled structures, which respectively lead to a low and high buckled monolayer structure. Most promising new layered or planar structures identified include BeO, GaN, and ZnO on the tensile strain side, Ge, Si, and GaP on the compressive strain side. PMID:27090430
Wang, Jianwei; Zhang, Yong
2016-01-01
When coming to identify new 2D materials, our intuition would suggest us to look from layered instead of 3D materials. However, since graphite can be hypothetically derived from diamond by stretching it along its [111] axis, many 3D materials can also potentially be explored as new candidates for 2D materials. Using a density functional theory, we perform a systematic study over the common Group IV, III-V, and II-VI semiconductors along different deformation paths to reveal new structures that are topologically connected to but distinctly different from the 3D parent structure. Specifically, we explore two major phase transition paths, originating respectively from wurtzite and NiAs structure, by applying compressive and tensile strain along the symmetry axis, and calculating the total energy changes to search for potential metastable states, as well as phonon spectra to examine the structural stability. Each path is found to further split into two branches under tensile strain-low buckled and high buckled structures, which respectively lead to a low and high buckled monolayer structure. Most promising new layered or planar structures identified include BeO, GaN, and ZnO on the tensile strain side, Ge, Si, and GaP on the compressive strain side. PMID:27090430
NASA Astrophysics Data System (ADS)
Wang, Jianwei; Zhang, Yong
2016-04-01
When coming to identify new 2D materials, our intuition would suggest us to look from layered instead of 3D materials. However, since graphite can be hypothetically derived from diamond by stretching it along its [111] axis, many 3D materials can also potentially be explored as new candidates for 2D materials. Using a density functional theory, we perform a systematic study over the common Group IV, III–V, and II–VI semiconductors along different deformation paths to reveal new structures that are topologically connected to but distinctly different from the 3D parent structure. Specifically, we explore two major phase transition paths, originating respectively from wurtzite and NiAs structure, by applying compressive and tensile strain along the symmetry axis, and calculating the total energy changes to search for potential metastable states, as well as phonon spectra to examine the structural stability. Each path is found to further split into two branches under tensile strain–low buckled and high buckled structures, which respectively lead to a low and high buckled monolayer structure. Most promising new layered or planar structures identified include BeO, GaN, and ZnO on the tensile strain side, Ge, Si, and GaP on the compressive strain side.
Spin-transfer torque generated by a topological insulator.
Mellnik, A R; Lee, J S; Richardella, A; Grab, J L; Mintun, P J; Fischer, M H; Vaezi, A; Manchon, A; Kim, E-A; Samarth, N; Ralph, D C
2014-07-24
Magnetic devices are a leading contender for the implementation of memory and logic technologies that are non-volatile, that can scale to high density and high speed, and that do not wear out. However, widespread application of magnetic memory and logic devices will require the development of efficient mechanisms for reorienting their magnetization using the least possible current and power. There has been considerable recent progress in this effort; in particular, it has been discovered that spin-orbit interactions in heavy-metal/ferromagnet bilayers can produce strong current-driven torques on the magnetic layer, via the spin Hall effect in the heavy metal or the Rashba-Edelstein effect in the ferromagnet. In the search for materials to provide even more efficient spin-orbit-induced torques, some proposals have suggested topological insulators, which possess a surface state in which the effects of spin-orbit coupling are maximal in the sense that an electron's spin orientation is fixed relative to its propagation direction. Here we report experiments showing that charge current flowing in-plane in a thin film of the topological insulator bismuth selenide (Bi2Se3) at room temperature can indeed exert a strong spin-transfer torque on an adjacent ferromagnetic permalloy (Ni81Fe19) thin film, with a direction consistent with that expected from the topological surface state. We find that the strength of the torque per unit charge current density in Bi2Se3 is greater than for any source of spin-transfer torque measured so far, even for non-ideal topological insulator films in which the surface states coexist with bulk conduction. Our data suggest that topological insulators could enable very efficient electrical manipulation of magnetic materials at room temperature, for memory and logic applications.
Topological crystalline Bose insulator in two dimensions via entanglement spectrum
NASA Astrophysics Data System (ADS)
Ware, Brayden; Kimchi, Itamar; Parameswaran, S. A.; Bauer, Bela
2015-11-01
Strongly correlated analogs of topological insulators have been explored in systems with purely on-site symmetries, such as time-reversal or charge conservation. Here, we use recently developed tensor network tools to study a quantum state of interacting bosons which is featureless in the bulk, but distinguished from an atomic insulator in that it exhibits entanglement which is protected by its spatial symmetries. These properties are encoded in a model many-body wave function that describes a fully symmetric insulator of bosons on the honeycomb lattice at half filling per site. While the resulting integer unit cell filling allows the state to bypass "no-go" theorems that trigger fractionalization at fractional filling, it nevertheless has nontrivial entanglement, protected by symmetry. We demonstrate this by computing the boundary entanglement spectra, finding a gapless entanglement edge described by a conformal field theory as well as degeneracies protected by the nontrivial action of combined charge conservation and spatial symmetries on the edge. Here, the tight-binding representation of the space group symmetries plays a particular role in allowing certain entanglement cuts that are not allowed on other lattices of the same symmetry, suggesting that the lattice representation can serve as an additional symmetry ingredient in protecting an interacting topological phase. Our results extend to a related insulating state of electrons, with short-ranged entanglement and no band insulator analog.
A Roadmap for Controlled Production of Topological Insulator Nanostructures and Thin Films.
Guo, Yunfan; Liu, Zhongfan; Peng, Hailin
2015-07-15
The group V-VI chalcogenide semiconductors (Bi2 Se3 , Bi2 Te3 , and Sb2 Te3 ) have long been known as thermoelectric materials. Recently, they have been once more generating interest because Bi2 Se3 , Bi2 Te3 and Sb2 Te3 have been crowned as 3D topological insulators (TIs), which have insulating bulk gaps and metallic Dirac surface states. One big challenge in the study of TIs is the lack of high-quality materials with few defects and insulating bulk states. To manifest the topological surface states, it is critical to suppress the contribution from the bulk carriers. Controlled production of TI nanostructures that have a large surface-to-volume ratio is an efficient way to reduce the bulk conductance and to significantly enhance the topological surface conduction. In this review article, the recent progress on the preparation of TI nanostructures is highlighted. Basic production methods for TI nanostructures are introduced in detail. Furthermore, several specific production approaches to reduce the residual bulk carriers from defects are summarized. Finally, the progress and the prospects of the production of TI-based heterostructures, which hold promise in both fundamental study and novel applications are discussed.
Shao, J. M.; Yao, J. D.; Yang, G. W.
2015-05-21
We describe a theoretical study of the terahertz (THz) radiation field-induced dc transport response of the surface state of a 3D topological insulator that has been subjected to a perpendicular magnetic field. Using the Landau–Floquet state and linear response theory, we obtain the photoconductivity characteristics for various types of polarized THz field. The longitudinal photoconductivity shows a clear oscillatory dependence on ω/ω{sub B}, where ω{sub B}=v{sub F}√(2eB/ℏ). This oscillation occurs because of the oscillatory structure of the Landau density of states and occurs in agreement with the photon-assisted transitions between the different Landau levels. The THz field's polarization has a major influence on the photoconductivity. A linear transverse polarization will lead to the most obvious oscillation, while the circular polarization is next to it, but the longitudinal polarization has no influence. We also discuss the broadening effect on the impurity potential and its influence. The findings with regard to the interactions between topological insulators and THz fields actually open a path toward the development of THz device applications of topological insulators.
Orbital selective spin-texture in a topological insulator
Singh, Bahadur Prasad, R.
2015-05-15
Three-dimensional topological insulators support a metallic non-trivial surface state with unique spin texture, where spin and momentum are locked perpendicular to each other. In this work, we investigate the orbital selective spin-texture associated with the topological surface states in Sb2Te{sub 3}, using the first principles calculations. Sb2Te{sub 3} is a strong topological insulator with a p-p type bulk band inversion at the Γ-point and supports a single topological metallic surface state with upper (lower) Dirac-cone has left (right) handed spin-texture. Here, we show that the topological surface state has an additional locking between the spin and orbitals, leading to an orbital selective spin-texture. The out-of-plane orbitals (p{sub z} orbitals) have an isotropic orbital texture for both the Dirac cones with an associated left and right handed spin-texture for the upper and lower Dirac cones, respectively. In contrast, the in-planar orbital texture (p{sub x} and p{sub y} projections) is tangential for the upper Dirac-cone and is radial for the lower Dirac-cone surface state. The dominant in-planar orbital texture in both the Dirac cones lead to a right handed orbital-selective spin-texture.
Topological insulators and C∗-algebras: Theory and numerical practice
NASA Astrophysics Data System (ADS)
Hastings, Matthew B.; Loring, Terry A.
2011-07-01
We apply ideas from C∗-algebra to the study of disordered topological insulators. We extract certain almost commuting matrices from the free Fermi Hamiltonian, describing band projected coordinate matrices. By considering topological obstructions to approximating these matrices by exactly commuting matrices, we are able to compute invariants quantifying different topological phases. We generalize previous two dimensional results to higher dimensions; we give a general expression for the topological invariants for arbitrary dimension and several symmetry classes, including chiral symmetry classes, and we present a detailed K-theory treatment of this expression for time reversal invariant three dimensional systems. We can use these results to show non-existence of localized Wannier functions for these systems. We use this approach to calculate the index for time-reversal invariant systems with spin-orbit scattering in three dimensions, on sizes up to 12 3, averaging over a large number of samples. The results show an interesting separation between the localization transition and the point at which the average index (which can be viewed as an "order parameter" for the topological insulator) begins to fluctuate from sample to sample, implying the existence of an unsuspected quantum phase transition separating two different delocalized phases in this system. One of the particular advantages of the C∗-algebraic technique that we present is that it is significantly faster in practice than other methods of computing the index, allowing the study of larger systems. In this paper, we present a detailed discussion of numerical implementation of our method.
NASA Astrophysics Data System (ADS)
Pouliot, Jacynthe; Bédard, Karine; Kirkwood, Donna; Lachance, Bernard
2008-05-01
Topological relationships between geological objects are of great interest for mining and petroleum exploration. Indeed, adjacency, inclusion and intersection are common relationships between geological objects such as faults, geological units, fractures, mineralized zones and reservoirs. However, in the context of 3D modeling, actual geometric data models used to store those objects are not designed to manage explicit topological relationships. For example, with Gocad© software, topological analyses are possible but they require a series of successive manipulations and are time consuming. This paper presents the development of a 3D topological query prototype, TQuery, compatible with Gocad© modeling platform. It allows the user to export Gocad© objects to a data storage model that regularizes the topological relationships between objects. The development of TQuery was oriented towards the use of volumetric objects that are composed of tetrahedrons. Exported data are then retrieved and used for 3D topological and spatial queries. One of the advantages of TQuery is that different types of objects can be queried at the same time without restricting the operations to voxel regions. TQuery allows the user to analyze data more quickly and efficiently and does not require a 3D modeling specialist to use it, which is particularly attractive in the context of a decision-making aid. The prototype was tested on a 3D GeoModel of a continental red-bed copper deposit in the Silurian Robitaille Formation (Transfiguration property, Québec, Canada).
Weak Topological Insulators in PbTe/SnTe superlattice
NASA Astrophysics Data System (ADS)
Yang, Gang; Liu, Junwei; Fu, Liang; Duan, Wenhui; Liu, Chaoxing
2014-03-01
It is desirable to realize topological phases in artificial structures by engineering electronic band structures. In this paper, we investigate (PbTe)m(SnTe)2n-m superlattices along the [001] direction and find a robust weak topological insulator phase for a large variety of layer numbers m and 2 n - m . We confirm this topologically non-trivial phase by calculating Z2 topological invariants and topological surface states based on the first-principles calculations. We show that the folding of Brillouin zone due to the superlattice structure plays an essential role in inducing topologically non-trivial phases in this system. This mechanism can be generalized to other systems in which band inversion occurs at multiple momenta, and gives us a brand-new way to engineer topological materials in artificial structures. We acknowledge support from the Ministry of Science and Technology of China and the National Natural Science Foundation of China. LF is supported by the DOE Office of Basic Energy Sciences.
The topological Anderson insulator phase in the Kane-Mele model.
Orth, Christoph P; Sekera, Tibor; Bruder, Christoph; Schmidt, Thomas L
2016-04-05
It has been proposed that adding disorder to a topologically trivial mercury telluride/cadmium telluride (HgTe/CdTe) quantum well can induce a transition to a topologically nontrivial state. The resulting state was termed topological Anderson insulator and was found in computer simulations of the Bernevig-Hughes-Zhang model. Here, we show that the topological Anderson insulator is a more universal phenomenon and also appears in the Kane-Mele model of topological insulators on a honeycomb lattice. We numerically investigate the interplay of the relevant parameters, and establish the parameter range in which the topological Anderson insulator exists. A staggered sublattice potential turns out to be a necessary condition for the transition to the topological Anderson insulator. For weak enough disorder, a calculation based on the lowest-order Born approximation reproduces quantitatively the numerical data. Our results thus considerably increase the number of candidate materials for the topological Anderson insulator phase.
The topological Anderson insulator phase in the Kane-Mele model.
Orth, Christoph P; Sekera, Tibor; Bruder, Christoph; Schmidt, Thomas L
2016-01-01
It has been proposed that adding disorder to a topologically trivial mercury telluride/cadmium telluride (HgTe/CdTe) quantum well can induce a transition to a topologically nontrivial state. The resulting state was termed topological Anderson insulator and was found in computer simulations of the Bernevig-Hughes-Zhang model. Here, we show that the topological Anderson insulator is a more universal phenomenon and also appears in the Kane-Mele model of topological insulators on a honeycomb lattice. We numerically investigate the interplay of the relevant parameters, and establish the parameter range in which the topological Anderson insulator exists. A staggered sublattice potential turns out to be a necessary condition for the transition to the topological Anderson insulator. For weak enough disorder, a calculation based on the lowest-order Born approximation reproduces quantitatively the numerical data. Our results thus considerably increase the number of candidate materials for the topological Anderson insulator phase. PMID:27045779
The topological Anderson insulator phase in the Kane-Mele model
Orth, Christoph P.; Sekera, Tibor; Bruder, Christoph; Schmidt, Thomas L.
2016-01-01
It has been proposed that adding disorder to a topologically trivial mercury telluride/cadmium telluride (HgTe/CdTe) quantum well can induce a transition to a topologically nontrivial state. The resulting state was termed topological Anderson insulator and was found in computer simulations of the Bernevig-Hughes-Zhang model. Here, we show that the topological Anderson insulator is a more universal phenomenon and also appears in the Kane-Mele model of topological insulators on a honeycomb lattice. We numerically investigate the interplay of the relevant parameters, and establish the parameter range in which the topological Anderson insulator exists. A staggered sublattice potential turns out to be a necessary condition for the transition to the topological Anderson insulator. For weak enough disorder, a calculation based on the lowest-order Born approximation reproduces quantitatively the numerical data. Our results thus considerably increase the number of candidate materials for the topological Anderson insulator phase. PMID:27045779
The topological Anderson insulator phase in the Kane-Mele model
NASA Astrophysics Data System (ADS)
Orth, Christoph P.; Sekera, Tibor; Bruder, Christoph; Schmidt, Thomas L.
2016-04-01
It has been proposed that adding disorder to a topologically trivial mercury telluride/cadmium telluride (HgTe/CdTe) quantum well can induce a transition to a topologically nontrivial state. The resulting state was termed topological Anderson insulator and was found in computer simulations of the Bernevig-Hughes-Zhang model. Here, we show that the topological Anderson insulator is a more universal phenomenon and also appears in the Kane-Mele model of topological insulators on a honeycomb lattice. We numerically investigate the interplay of the relevant parameters, and establish the parameter range in which the topological Anderson insulator exists. A staggered sublattice potential turns out to be a necessary condition for the transition to the topological Anderson insulator. For weak enough disorder, a calculation based on the lowest-order Born approximation reproduces quantitatively the numerical data. Our results thus considerably increase the number of candidate materials for the topological Anderson insulator phase.
All-Si valley-Hall photonic topological insulator
NASA Astrophysics Data System (ADS)
Ma, Tzuhsuan; Shvets, Gennady
2016-02-01
An all-Si photonic structure emulating the quantum-valley-Hall effect is proposed. We show that it acts as a photonic topological insulator (PTI), and that an interface between two such PTIs can support edge states that are free from scattering. The conservation of the valley degree of freedom enables efficient in- and out-coupling of light between the free space and the photonic structure. The topological protection of the edge waves can be utilized for designing arrays of resonant time-delay photonic cavities that do not suffer from reflections and cross-talk.
Munteanu, Cristian Robert; González-Díaz, Humberto; Magalhães, Alexandre L
2008-09-21
The huge amount of new proteins that need a fast enzymatic activity characterization creates demands of protein QSAR theoretical models. The protein parameters that can be used for an enzyme/non-enzyme classification includes the simpler indices such as composition, sequence and connectivity, also called topological indices (TIs) and the computationally expensive 3D descriptors. A comparison of the 3D versus lower dimension indices has not been reported with respect to the power of discrimination of proteins according to enzyme action. A set of 966 proteins (enzymes and non-enzymes) whose structural characteristics are provided by PDB/DSSP files was analyzed with Python/Biopython scripts, STATISTICA and Weka. The list of indices includes, but it is not restricted to pure composition indices (residue fractions), DSSP secondary structure protein composition and 3D indices (surface and access). We also used mixed indices such as composition-sequence indices (Chou's pseudo-amino acid compositions or coupling numbers), 3D-composition (surface fractions) and DSSP secondary structure amino acid composition/propensities (obtained with our Prot-2S Web tool). In addition, we extend and test for the first time several classic TIs for the Randic's protein sequence Star graphs using our Sequence to Star Graph (S2SG) Python application. All the indices were processed with general discriminant analysis models (GDA), neural networks (NN) and machine learning (ML) methods and the results are presented versus complexity, average of Shannon's information entropy (Sh) and data/method type. This study compares for the first time all these classes of indices to assess the ratios between model accuracy and indices/model complexity in enzyme/non-enzyme discrimination. The use of different methods and complexity of data shows that one cannot establish a direct relation between the complexity and the accuracy of the model. PMID:18606172
Disorder Effects in Charge Transport and Spin Response of Topological Insulators
NASA Astrophysics Data System (ADS)
Zhao, Lukas Zhonghua
Topological insulators are a class of solids in which the non-trivial inverted bulk band structure gives rise to metallic surface states that are robust against impurity backscattering. First principle calculations predicted Bi2Te3, Sb2Te3 and Bi2Se3 to be three-dimensional (3D) topological insulators with a single Dirac cone on the surface. The topological surface states were subsequently observed by angle-resolved photoemission (ARPES) and scanning tunneling microscopy (STM). The investigations of charge transport through topological surfaces of 3D topological insulators, however, have faced a major challenge due to large charge carrier densities in the bulk donated by randomly distributed defects such as vacancies and antisites. This bulk disorder intermixes surface and bulk conduction channels, thereby complicating access to the low-energy (Dirac point) charge transport or magnetic response and resulting in the relatively low measured carrier mobilities. Moreover, charge inhomogeneity arising from bulk disorder can result in pronounced nanoscale spatial fluctuations of energy on the surface, leading to the formation of surface `puddles' of different carrier types. Great efforts have been made to combat the undesirable effects of disorder in 3D topological insulators and to reduce bulk carriers through chemical doping, nanostructure fabrication, and electric gating. In this work we have developed a new way to reduce bulk carrier densities using high-energy electron irradiation, thereby allowing us access to the topological surface quantum channels. We also found that disorder in 3D topological insulators can be beneficial. It can play an important part in enabling detection of unusual magnetic response from Dirac fermions and in uncovering new excitations, namely surface superconductivity in Dirac `puddles'. In Chapter 3 we show how by using differential magnetometry we could probe spin rotation in the 3D topological material family (Bi2Se 3, Bi2Te3 and Sb2Te3
Stability of Majorana vortex bound states on the surface of superconducting topological insulators
NASA Astrophysics Data System (ADS)
Zhang, Junyi; Cano, Jennifer; Neupert, Titus
Fu and Kane showed that superconductivity induced on the surface of a 3D topological insulator results in isolated Majorana bound states that appear in the cores of vortices. Many efforts to realize this idea are based on proximity-induced superconducting order in a heterostructure. Recently, superconductivity has been observed in PbTaSe2, which has the band topology of a topological insulator with Dirac cone surface states. Hence, it nourishes the vision of realizing the Fu and Kane proposal in a stoichiometric material without the need for doping or fabricating heterostructures. Motivated by this possibility, we give a comprehensive analysis of stability and localization properties of the vortex Majorana modes in such a topological superconducting material. In particular, we address the experimentally relevant questions regarding (i) the energy separation between the vortex bound and excited states, (ii) the dependence of the hybridization between Majorana modes from opposite surfaces on the thickness of a thin-film sample, (iii) the influence of the bulk superconducting pockets on the Majorana states.
Characterizing the structure of topological insulator thin films
Richardella, Anthony; Kandala, Abhinav; Lee, Joon Sue; Samarth, Nitin
2015-08-01
We describe the characterization of structural defects that occur during molecular beam epitaxy of topological insulator thin films on commonly used substrates. Twinned domains are ubiquitous but can be reduced by growth on smooth InP (111)A substrates, depending on details of the oxide desorption. Even with a low density of twins, the lattice mismatch between (Bi, Sb){sub 2}Te{sub 3} and InP can cause tilts in the film with respect to the substrate. We also briefly discuss transport in simultaneously top and back electrically gated devices using SrTiO{sub 3} and the use of capping layers to protect topological insulator films from oxidation and exposure.
Cherenkov sound on a surface of a topological insulator
NASA Astrophysics Data System (ADS)
Smirnov, Sergey
2013-11-01
Topological insulators are currently of considerable interest due to peculiar electronic properties originating from helical states on their surfaces. Here we demonstrate that the sound excited by helical particles on surfaces of topological insulators has several exotic properties fundamentally different from sound propagating in nonhelical or even isotropic helical systems. Specifically, the sound may have strictly forward propagation absent for isotropic helical states. Its dependence on the anisotropy of the realistic surface states is of distinguished behavior which may be used as an alternative experimental tool to measure the anisotropy strength. Fascinating from the fundamental point of view backward, or anomalous, Cherenkov sound is excited above the critical angle π/2 when the anisotropy exceeds a critical value. Strikingly, at strong anisotropy the sound localizes into a few forward and backward beams propagating along specific directions.
Z2 anomaly and boundaries of topological insulators
NASA Astrophysics Data System (ADS)
Ringel, Zohar; Stern, Ady
2013-09-01
We study the edge and surface theories of topological insulators from the perspective of anomalies and identify a Z2 anomaly associated with charge conservation. The anomaly is manifested through a two-point correlation function involving creation and annihilation operators on two decoupled boundaries. Although charge conservation on each boundary requires this quantity to vanish, we find that it diverges. A corollary result is that under an insertion of a flux quantum, the ground state evolves to an exactly orthogonal state independent of the rate at which the flux is inserted. The anomaly persists in the presence of disorder and imposes sharp restrictions on possible low-energy theories. Being formulated in a many-body, field-theoretical language, the anomaly allows one to test the robustness of topological insulators to interactions in a concise way.
Specular Andreev reflection in thin films of topological insulators
NASA Astrophysics Data System (ADS)
Majidi, Leyla; Asgari, Reza
2016-05-01
We theoretically reveal the possibility of specular Andreev reflection in a thin film topological insulator normal-superconductor (N/S) junction in the presence of a gate electric field. The probability of specular Andreev reflection increases with the electric field, and electron-hole conversion with unit efficiency happens in a wide experimentally accessible range of the electric field. We show that perfect specular Andreev reflection can occur for all angles of incidence with a particular excitation energy value. In addition, we find that the thermal conductance of the structure displays exponential dependence on the temperature. Our results reveal the potential of the proposed topological insulator thin-film-based N/S structure for the realization of intraband specular Andreev reflection.
Magnetic impurities on the surface of a topological insulator.
Liu, Qin; Liu, Chao-Xing; Xu, Cenke; Qi, Xiao-Liang; Zhang, Shou-Cheng
2009-04-17
The surface states of a topological insulator are described by an emergent relativistic massless Dirac equation in 2 + 1 dimensions. In contrast with graphene, there is an odd number of Dirac points, and the electron spin is directly coupled to the momentum. We show that a magnetic impurity opens up a local gap and suppresses the local density of states. Furthermore, the Dirac electronic states mediate an RKKY interaction among the magnetic impurities which is always ferromagnetic, whenever the chemical potential lies near the Dirac point. Through this exchange mechanism, magnetic atoms uniformly deposited on the surface of a topological insulator could naturally form a ferromagnetically ordered film. These effects can be directly measured in STM experiments. We also study the case of quenched disorder through a renormalization group analysis.
Zero-bias photocurrent in ferromagnetic topological insulator
Ogawa, N.; Yoshimi, R.; Yasuda, K.; Tsukazaki, A.; Kawasaki, M.; Tokura, Y.
2016-01-01
Magnetic interactions in topological insulators cause essential modifications in the originally mass-less surface states. They offer a mass gap at the Dirac point and/or largely deform the energy dispersion, providing a new path towards exotic physics and applications to realize dissipation-less electronics. The nonequilibrium electron dynamics at these modified Dirac states unveil additional functions, such as highly efficient photon to spin-current conversion. Here we demonstrate the generation of large zero-bias photocurrent in magnetic topological insulator thin films on mid-infrared photoexcitation, pointing to the controllable band asymmetry in the momentum space. The photocurrent spectra with a maximal response to the intra-Dirac-band excitations can be a sensitive measure for the correlation between Dirac electrons and magnetic moments. PMID:27435028
Zero-bias photocurrent in ferromagnetic topological insulator.
Ogawa, N; Yoshimi, R; Yasuda, K; Tsukazaki, A; Kawasaki, M; Tokura, Y
2016-01-01
Magnetic interactions in topological insulators cause essential modifications in the originally mass-less surface states. They offer a mass gap at the Dirac point and/or largely deform the energy dispersion, providing a new path towards exotic physics and applications to realize dissipation-less electronics. The nonequilibrium electron dynamics at these modified Dirac states unveil additional functions, such as highly efficient photon to spin-current conversion. Here we demonstrate the generation of large zero-bias photocurrent in magnetic topological insulator thin films on mid-infrared photoexcitation, pointing to the controllable band asymmetry in the momentum space. The photocurrent spectra with a maximal response to the intra-Dirac-band excitations can be a sensitive measure for the correlation between Dirac electrons and magnetic moments. PMID:27435028
Protein Thermodynamics from the 3D Topological Structure of the Native State
NASA Astrophysics Data System (ADS)
Wood, Gregory; Dallakayan, Sargis; Jacobs, Donald
2004-03-01
Thermodynamic stability is calculated from the new Distance Constraint Model (DCM)[1]. Microscopic interactions are treated as constraints to which entropy and energies are assigned. From the 3D structure, an ensemble of mechanical frameworks are constructed representing distinct topologies of fluctuating constraints. For each framework, total energy is additive over all constraints while total entropy is additive over a select set of independent constraints. Independent constraints are identified via a graph theoretical algorithm, Floppy Inclusion and Rigid Substructure Topography (FIRST) [2]. Using Monte Carlo sampling a free energy landscape is calculated in constraint space. Excellent fits to heat capacity data for ubiquitin are achieved. Work supported by NIH GM48680-0952. [1] D. J. Jacobs, S. Dallakyan, G. G. Wood and A. Heckathorne, cond-mat/0309207 (to appear in PRE) [2] D. J. Jacobs, A. Rader, L. A. Kuhn and M. F. Thorpe, Proteins 44 150 (2001)
Dirac single particle and plasmon excitations in topological insulators
NASA Astrophysics Data System (ADS)
Lupi, Stefano
Topological Insulators (TIs), like Bi2Se3 and Bi2Te3, are one of the most intriguing issues at focus in Condensed Matter Physics. TIs exhibit a band gap in the bulk like ordinary insulators, but have intrinsic 2D conducting states on their edge and surface. This means that the topology, associated with the electronic wavefunctions of the system, changes discontinuously when passing from the bulk to the surface. The edge states arise from a strong spin-orbit coupling, and they are backscattering protected, i.e. not sensitive to disorder (except that coming from magnetic impurities). Such as graphene, TIs surface charge transport is carried out by Dirac fermions, with a very high surface carrier density (n >= 1013 cm-2) , compared to typical values on metal surfaces. Apart single particle excitations, Dirac fermions in TIs sustain exotic plasmonic (collective) modes whose properties of tunability and temperature dependence can be used for photonics applications at the nanoscale. Moreover, unlike plasmons in metals, Dirac plasmons in TIs are expected to be strongly affected by an external magnetic field B due to fact that the cyclotron frequency is comparable to the the plasmon frequency, in particular when plasmons are engineered in the terahertz region of the electromagnetic spectrum. In this talk, after a general review on the properties of Topological Insulators, I will discuss the terahertz linear response of Dirac plasmons in TIs and their behavior under a strong magnetic field up to 30 T. The appearance of strong non-linear optical effects, when the THz electric field reaches values on the order of 1 MV/cm, will be also discussed. In the second part of the talk, I will discuss the sub-ps dynamics of Dirac single-particle and collective excitations as measured by optical-pump THz-probe experiments. Both the steady state and time-resolved experiments provide a unifying picture of single particle and collective electronic excitations in Topological Insulators.
Chen, Chaoyu; He, Shaolong; Weng, Hongming; Zhang, Wentao; Zhao, Lin; Liu, Haiyun; Jia, Xiaowen; Mou, Daixiang; Liu, Shanyu; He, Junfeng; Peng, Yingying; Feng, Ya; Xie, Zhuojin; Liu, Guodong; Dong, Xiaoli; Zhang, Jun; Wang, Xiaoyang; Peng, Qinjun; Wang, Zhimin; Zhang, Shenjin; Yang, Feng; Chen, Chuangtian; Xu, Zuyan; Dai, Xi; Fang, Zhong; Zhou, X J
2012-03-01
The physical property investigation (like transport measurements) and ultimate application of the topological insulators usually involve surfaces that are exposed to ambient environment (1 atm and room temperature). One critical issue is how the topological surface state will behave under such ambient conditions. We report high resolution angle-resolved photoemission measurements to directly probe the surface state of the prototypical topological insulators, Bi(2)Se(3) and Bi(2)Te(3), upon exposing to various environments. We find that the topological order is robust even when the surface is exposed to air at room temperature. However, the surface state is strongly modified after such an exposure. Particularly, we have observed the formation of two-dimensional quantum well states near the exposed surface of the topological insulators. These findings provide key information in understanding the surface properties of the topological insulators under ambient environment and in engineering the topological surface state for applications.
Chen, Chaoyu; He, Shaolong; Weng, Hongming; Zhang, Wentao; Zhao, Lin; Liu, Haiyun; Jia, Xiaowen; Mou, Daixiang; Liu, Shanyu; He, Junfeng; Peng, Yingying; Feng, Ya; Xie, Zhuojin; Liu, Guodong; Dong, Xiaoli; Zhang, Jun; Wang, Xiaoyang; Peng, Qinjun; Wang, Zhimin; Zhang, Shenjin; Yang, Feng; Chen, Chuangtian; Xu, Zuyan; Dai, Xi; Fang, Zhong; Zhou, X. J.
2012-01-01
The physical property investigation (like transport measurements) and ultimate application of the topological insulators usually involve surfaces that are exposed to ambient environment (1 atm and room temperature). One critical issue is how the topological surface state will behave under such ambient conditions. We report high resolution angle-resolved photoemission measurements to directly probe the surface state of the prototypical topological insulators, Bi2Se3 and Bi2Te3, upon exposing to various environments. We find that the topological order is robust even when the surface is exposed to air at room temperature. However, the surface state is strongly modified after such an exposure. Particularly, we have observed the formation of two-dimensional quantum well states near the exposed surface of the topological insulators. These findings provide key information in understanding the surface properties of the topological insulators under ambient environment and in engineering the topological surface state for applications. PMID:22355146
Transport through quantum wells and superlattices on topological insulator surfaces.
Song, J-T; Li, Y-X; Sun, Q-F
2014-05-01
We investigate electron transmission coefficients through quantum wells and quantum superlattices on topological insulator surfaces. The quantum well or superlattice is not constituted by general electronic potential barriers but by Fermi velocity barriers which originate in the different topological insulator surfaces. It is found that electron resonant modes can be renormalized by quantum wells and more clearly by quantum superlattices. The depth and width of a quantum well and superlattice, the incident angle of an electron, and the Fermi energy can be used to effectively tune the electron resonant modes. In particular, the number N of periodic structures that constitute a superlattice can further strengthen these regulating effects. These results suggest that a device could be developed to select and regulate electron propagation modes on topological insulator surfaces. Finally, we also study the conductance and the Fano factor through quantum wells and quantum superlattices. In contrast to what has been reported before, the suppression factors of 0.4 in the conductance and 0.85 in the Fano factor are observed in a quantum well, while the transport for a quantum superlattice shows strong oscillating behavior at low energy and reaches the same saturated values as in the case of a quantum well at sufficiently large energies.
Detection of the aortic intimal tears by using 3D digital topology
NASA Astrophysics Data System (ADS)
Lohou, Christophe; Miguel, Bruno
2011-03-01
Aortic dissection is a real problem of public health, it is a medical emergency and may quickly lead to death. Aortic dissection is caused by aortal tissue perforation because of blood pressure. It consists of tears (or holes of the intimal tissue) inside lumens. These tears are difficult to detect because they do not correspond to a filled organ to segment; they are usually visually retrieved by radiologists by examining gray level variation on successive image slices, but it remains a very difficult and error-prone task. Our purpose is to detect these intimal tears to help cardiac surgeons in making diagnosis. It would be useful either during a preoperative phase (visualization and location of tears, endoprothesis sizing); or during a peroperative phase (a registration of tears on angiographic images would lead to a more accuracy of surgeon's gestures and thus would enhance care of patient). At this aim, we use Aktouf et al.'s holes filling algorithm proposed in the field of digital topology. This algorithm permits the filling of holes of a 3D binary object by using topological notions - the holes are precisely the intimal tears for our aortic dissection images, after a first preprocessing step. As far as we know, this is the first time that such a proposal is made, even if it is a crucial data for cardiac surgeons. Our study is a preliminary and innovative work; our results are nevertheless considered satisfactory. This approach would also gain to be known to specialists of other diseases.
Wang, Y H; Kirtley, J R; Katmis, F; Jarillo-Herrero, P; Moodera, J S; Moler, K A
2015-08-28
A magnetic domain boundary on the surface of a three-dimensional topological insulator is predicted to host a chiral edge state, but direct demonstration is challenging. We used a scanning superconducting quantum interference device to show that current in a magnetized topological insulator heterostructure (EuS/Bi2Se3) flows at the edge when the Fermi level is gate-tuned to the surface band gap. We further induced micrometer-scale magnetic structures on the heterostructure and detected a chiral edge current at the magnetic domain boundary. The chirality of the current was determined by magnetization of the surrounding domain, and its magnitude by the local chemical potential rather than the applied current. Such magnetic structures provide a platform for detecting topological magnetoelectric effects and may enable progress in quantum information processing and spintronics. PMID:26272905
Virus Enrichment for Single Virus Infection by Using 3D Insulator Based Dielectrophoresis
Masuda, Taisuke; Maruyama, Hisataka; Honda, Ayae; Arai, Fumihito
2014-01-01
We developed an active virus filter (AVF) that enables virus enrichment for single virus infection, by using insulator-based dielectrophoresis (iDEP). A 3D-constricted flow channel design enabled the production of an iDEP force in the microfluidic chip. iDEP using a chip with multiple active virus filters (AVFs) was more accurate and faster than using a chip with a single AVF, and improved the efficiency of virus trapping. We utilized maskless photolithography to achieve the precise 3D gray-scale exposure required for fabrication of constricted flow channel. Influenza virus (A PR/8) was enriched by a negative DEP force when sinusoidal wave was applied to the electrodes within an amplitude range of 20 Vp-p and a frequency of 10 MHz. AVF-mediated virus enrichment can be repeated simply by turning the current ON or OFF. Furthermore, the negative AVF can inhibit virus adhesion onto the glass substrate. We then trapped and transported one of the enriched viruses by using optical tweezers. This microfluidic chip facilitated the effective transport of a single virus from AVFs towards the cell-containing chamber without crossing an electrode. We successfully transported the virus to the cell chamber (v = 10 µm/s) and brought it infected with a selected single H292 cell. PMID:24918921
CTCF-Mediated Human 3D Genome Architecture Reveals Chromatin Topology for Transcription.
Tang, Zhonghui; Luo, Oscar Junhong; Li, Xingwang; Zheng, Meizhen; Zhu, Jacqueline Jufen; Szalaj, Przemyslaw; Trzaskoma, Pawel; Magalska, Adriana; Wlodarczyk, Jakub; Ruszczycki, Blazej; Michalski, Paul; Piecuch, Emaly; Wang, Ping; Wang, Danjuan; Tian, Simon Zhongyuan; Penrad-Mobayed, May; Sachs, Laurent M; Ruan, Xiaoan; Wei, Chia-Lin; Liu, Edison T; Wilczynski, Grzegorz M; Plewczynski, Dariusz; Li, Guoliang; Ruan, Yijun
2015-12-17
Spatial genome organization and its effect on transcription remains a fundamental question. We applied an advanced chromatin interaction analysis by paired-end tag sequencing (ChIA-PET) strategy to comprehensively map higher-order chromosome folding and specific chromatin interactions mediated by CCCTC-binding factor (CTCF) and RNA polymerase II (RNAPII) with haplotype specificity and nucleotide resolution in different human cell lineages. We find that CTCF/cohesin-mediated interaction anchors serve as structural foci for spatial organization of constitutive genes concordant with CTCF-motif orientation, whereas RNAPII interacts within these structures by selectively drawing cell-type-specific genes toward CTCF foci for coordinated transcription. Furthermore, we show that haplotype variants and allelic interactions have differential effects on chromosome configuration, influencing gene expression, and may provide mechanistic insights into functions associated with disease susceptibility. 3D genome simulation suggests a model of chromatin folding around chromosomal axes, where CTCF is involved in defining the interface between condensed and open compartments for structural regulation. Our 3D genome strategy thus provides unique insights in the topological mechanism of human variations and diseases. PMID:26686651
CTCF-Mediated Human 3D Genome Architecture Reveals Chromatin Topology for Transcription.
Tang, Zhonghui; Luo, Oscar Junhong; Li, Xingwang; Zheng, Meizhen; Zhu, Jacqueline Jufen; Szalaj, Przemyslaw; Trzaskoma, Pawel; Magalska, Adriana; Wlodarczyk, Jakub; Ruszczycki, Blazej; Michalski, Paul; Piecuch, Emaly; Wang, Ping; Wang, Danjuan; Tian, Simon Zhongyuan; Penrad-Mobayed, May; Sachs, Laurent M; Ruan, Xiaoan; Wei, Chia-Lin; Liu, Edison T; Wilczynski, Grzegorz M; Plewczynski, Dariusz; Li, Guoliang; Ruan, Yijun
2015-12-17
Spatial genome organization and its effect on transcription remains a fundamental question. We applied an advanced chromatin interaction analysis by paired-end tag sequencing (ChIA-PET) strategy to comprehensively map higher-order chromosome folding and specific chromatin interactions mediated by CCCTC-binding factor (CTCF) and RNA polymerase II (RNAPII) with haplotype specificity and nucleotide resolution in different human cell lineages. We find that CTCF/cohesin-mediated interaction anchors serve as structural foci for spatial organization of constitutive genes concordant with CTCF-motif orientation, whereas RNAPII interacts within these structures by selectively drawing cell-type-specific genes toward CTCF foci for coordinated transcription. Furthermore, we show that haplotype variants and allelic interactions have differential effects on chromosome configuration, influencing gene expression, and may provide mechanistic insights into functions associated with disease susceptibility. 3D genome simulation suggests a model of chromatin folding around chromosomal axes, where CTCF is involved in defining the interface between condensed and open compartments for structural regulation. Our 3D genome strategy thus provides unique insights in the topological mechanism of human variations and diseases.
Existence of two MHD reconnection modes in a solar 3D magnetic null point topology
NASA Astrophysics Data System (ADS)
Pariat, Etienne; Antiochos, Spiro; DeVore, C. Richard; Dalmasse, Kévin
2012-07-01
Magnetic topologies with a 3D magnetic null point are common in the solar atmosphere and occur at different spatial scales: such structures can be associated with some solar eruptions, with the so-called pseudo-streamers, and with numerous coronal jets. We have recently developed a series of numerical experiments that model magnetic reconnection in such configurations in order to study and explain the properties of jet-like features. Our model uses our state-of-the-art adaptive-mesh MHD solver ARMS. Energy is injected in the system by line-tied motion of the magnetic field lines in a corona-like configuration. We observe that, in the MHD framework, two reconnection modes eventually appear in the course of the evolution of the system. A very impulsive one, associated with a highly dynamic and fully 3D current sheet, is associated with the energetic generation of a jet. Before and after the generation of the jet, a quasi-steady reconnection mode, more similar to the standard 2D Sweet-Parker model, presents a lower global reconnection rate. We show that the geometry of the magnetic configuration influences the trigger of one or the other mode. We argue that this result carries important implications for the observed link between observational features such as solar jets, solar plumes, and the emission of coronal bright points.
Fully analytical integration over the 3D volume bounded by the β sphere in topological atoms.
Popelier, Paul L A
2011-11-17
Atomic properties of a topological atom are obtained by 3D integration over the volume of its atomic basin. Algorithms that compute atomic properties typically integrate over two subspaces: the volume bounded by the so-called β sphere, which is centered at the nucleus and completely contained within the atomic basin, and the volume of the remaining part of the basin. Here we show how the usual quadrature over the β sphere volume can be replaced by a fully analytical 3D integration leading to the atomic charge (monopole moment) for s, p, and d functions. Spherical tensor multipole moments have also been implemented and tested up to hexadecupole for s functions only, and up to quadrupole for s and p functions. The new algorithm is illustrated by operating on capped glycine (HF/6-31G, 35 molecular orbitals (MOs), 322 Gaussian primitives, 19 nuclei), the protein crambin (HF/3-21G, 1260 MOs, 5922 primitives and 642 nuclei), and tin (Z = 50) in Sn(2)(CH(3))(2) (B3LYP/cc-pVTZ and LANL2DZ, 59 MOs, 1352 primitives).
Widespread spin polarization effects in photoemission from topological insulators
Jozwiak, C.; Chen, Y. L.; Fedorov, A. V.; Analytis, J. G.; Rotundu, C. R.; Schmid, A. K.; Denlinger, J. D.; Chuang, Y.-D.; Lee, D.-H.; Fisher, I. R.; Birgeneau, R. J.; Shen, Z.-X.; Hussain, Z.; Lanzara, A.
2011-06-22
High-resolution spin- and angle-resolved photoemission spectroscopy (spin-ARPES) was performed on the three-dimensional topological insulator Bi{sub 2}Se{sub 3} using a recently developed high-efficiency spectrometer. The topological surface state's helical spin structure is observed, in agreement with theoretical prediction. Spin textures of both chiralities, at energies above and below the Dirac point, are observed, and the spin structure is found to persist at room temperature. The measurements reveal additional unexpected spin polarization effects, which also originate from the spin-orbit interaction, but are well differentiated from topological physics by contrasting momentum and photon energy and polarization dependencies. These observations demonstrate significant deviations of photoelectron and quasiparticle spin polarizations. Our findings illustrate the inherent complexity of spin-resolved ARPES and demonstrate key considerations for interpreting experimental results.
Topological Anderson insulators in systems without time-reversal symmetry
NASA Astrophysics Data System (ADS)
Su, Ying; Avishai, Y.; Wang, X. R.
2016-06-01
Occurrence of the topological Anderson insulator (TAI) in a HgTe quantum well suggests that when time-reversal symmetry (TRS) is maintained, the pertinent topological phase transition, marked by re-entrant 2 e2/h quantized conductance contributed by helical edge states, is driven by disorder. Here we show that when TRS is broken, the physics of the TAI becomes even richer. The pattern of longitudinal conductance and nonequilibrium local current distribution displays novel TAI phases characterized by nonzero Chern numbers, indicating the occurrence of multiple chiral edge modes. Tuning either disorder or Fermi energy (in both topologically trivial and nontrivial phases), drives transitions between these distinct TAI phases, characterized by jumps of the quantized conductance from 0 to e2/h and from e2/h to 2 e2/h . An effective medium theory based on the Born approximation yields an accurate description of different TAI phases in parameter space.
Topological interface states in multiscale spoof-insulator-spoof waveguides.
Meng, Yan; Xiang, Hong; Zhang, Ruo-Yang; Wu, Xiaoxiao; Han, Dezhuan; Chan, C T; Wen, Weijia
2016-08-15
The spoof-insulator-spoof (SIS) structure can serve as a waveguide for spoof surface plasmon polaritons (spoof SPPs). If a periodic geometry modulation in the wavelength scale is introduced to the SIS waveguide, this multiscale SIS (MSIS) waveguide possesses band gaps for spoof SPPs analogous to the band gaps in a photonic crystal. Inspired by the topological interface states found in photonic crystals, we construct an interface by connecting two MSIS waveguides with different topological properties (inverted Zak phases of bulk bands). The topological interface states in the MSIS waveguides are observed experimentally. The measured decay lengths of the interface states agree excellently with the numerical results. These localized interface states may find potential applications in miniaturized microwave devices. PMID:27519066
Two-dimensional carbon topological insulators superior to graphene.
Zhao, Mingwen; Dong, Wenzheng; Wang, Aizhu
2013-12-18
Graphene was the first material predicted to realize a topological insulator (TI), but unfortunately the gap is unobservably small due to carbon's weak spin-orbital coupling (SOC). Based on first-principles calculations, we propose a stable sp-sp(2) hybrid carbon network as a graphene analog whose electronic band structures in proximity of the Fermi level are characterized by Dirac cones. We demonstrate that this unique carbon framework has topologically nontrivial electronic structures with the Z2 topological invariant of v = 1 which is quite promising for hosting the quantum spin Hall effect (QSHE) in an experimentally accessible low temperature regime (<7 K). This provides a viable approach for searching for new TIs in 2D carbon allotropes.
NASA Astrophysics Data System (ADS)
Marchewka, Michał
2016-10-01
In this paper the results of the numerical calculation obtained for the three-dimensional (3D) strained Hg1-xCdx Te layers for the x-Cd composition from 0.1 to 0.155 and a different mismatch of the lattice constant are presented. For the investigated region of the Cd composition (x value) the negative energy gap (Eg =Γ8 -Γ6) in the Hg1-xCdx Te is smaller than in the case of pure HgTe which, as it turns out, has a significant influence on the topological surface states (TSS) and the position of the Dirac point. The numerical calculation based on the finite difference method applied for the 8×8 kp model with the in-plane tensile strain for (001) growth oriented structure shows that the Dirac cone inside the induced insulating band gap for non zero of the Cd composition and a bigger strain caused by the bigger lattice mismatch (than for the 3D HgTe TI) can be obtained. It was also shown how different x-Cd compounds move the Dirac cone from the valence band into the band gap. The presented results show that 75 nm wide 3D Hg1-xCdx Te structures with x ≈ 0.155 and 1.6% lattice mismatch make the system a true topological insulator with the dispersion of the topological surface states similar to those ones obtained for the strained CdTe/HgTe QW.
NASA Astrophysics Data System (ADS)
Jauregui, Luis A.; Pettes, Michael T.; Rokhinson, Leonid P.; Shi, Li; Chen, Yong P.
2016-04-01
The spin-helical Dirac fermion topological surface states in a topological insulator nanowire or nanoribbon promise novel topological devices and exotic physics such as Majorana fermions. Here, we report local and non-local transport measurements in Bi2Te3 topological insulator nanoribbons that exhibit quasi-ballistic transport over ˜2 μm. The conductance versus axial magnetic flux Φ exhibits Aharonov-Bohm oscillations with maxima occurring alternately at half-integer or integer flux quanta (Φ0 = h/e, where h is Planck's constant and e is the electron charge) depending periodically on the gate-tuned Fermi wavevector (kF) with period 2π/C (where C is the nanoribbon circumference). The conductance versus gate voltage also exhibits kF-periodic oscillations, anti-correlated between Φ = 0 and Φ0/2. These oscillations enable us to probe the Bi2Te3 band structure, and are consistent with the circumferentially quantized topological surface states forming a series of one-dimensional subbands, which undergo periodic magnetic field-induced topological transitions with the disappearance/appearance of the gapless Dirac point with a one-dimensional spin helical mode.
Jauregui, Luis A; Pettes, Michael T; Rokhinson, Leonid P; Shi, Li; Chen, Yong P
2016-04-01
The spin-helical Dirac fermion topological surface states in a topological insulator nanowire or nanoribbon promise novel topological devices and exotic physics such as Majorana fermions. Here, we report local and non-local transport measurements in Bi2Te3 topological insulator nanoribbons that exhibit quasi-ballistic transport over ∼2 μm. The conductance versus axial magnetic flux Φ exhibits Aharonov-Bohm oscillations with maxima occurring alternately at half-integer or integer flux quanta (Φ0 = h/e, where h is Planck's constant and e is the electron charge) depending periodically on the gate-tuned Fermi wavevector (kF) with period 2π/C (where C is the nanoribbon circumference). The conductance versus gate voltage also exhibits kF-periodic oscillations, anti-correlated between Φ = 0 and Φ0/2. These oscillations enable us to probe the Bi2Te3 band structure, and are consistent with the circumferentially quantized topological surface states forming a series of one-dimensional subbands, which undergo periodic magnetic field-induced topological transitions with the disappearance/appearance of the gapless Dirac point with a one-dimensional spin helical mode.
NASA Astrophysics Data System (ADS)
Jauregui, Luis A.; Pettes, Michael T.; Rokhinson, Leonid P.; Shi, Li; Chen, Yong P.
2016-04-01
The spin-helical Dirac fermion topological surface states in a topological insulator nanowire or nanoribbon promise novel topological devices and exotic physics such as Majorana fermions. Here, we report local and non-local transport measurements in Bi2Te3 topological insulator nanoribbons that exhibit quasi-ballistic transport over ∼2 μm. The conductance versus axial magnetic flux Φ exhibits Aharonov–Bohm oscillations with maxima occurring alternately at half-integer or integer flux quanta (Φ0 = h/e, where h is Planck's constant and e is the electron charge) depending periodically on the gate-tuned Fermi wavevector (kF) with period 2π/C (where C is the nanoribbon circumference). The conductance versus gate voltage also exhibits kF-periodic oscillations, anti-correlated between Φ = 0 and Φ0/2. These oscillations enable us to probe the Bi2Te3 band structure, and are consistent with the circumferentially quantized topological surface states forming a series of one-dimensional subbands, which undergo periodic magnetic field-induced topological transitions with the disappearance/appearance of the gapless Dirac point with a one-dimensional spin helical mode.
Kondo-like zero-bias conductance anomaly in a three-dimensional topological insulator nanowire
Cho, Sungjae; Zhong, Ruidan; Schneeloch, John A.; Gu, Genda; Mason, Nadya
2016-01-01
Zero-bias anomalies in topological nanowires have recently captured significant attention, as they are possible signatures of Majorana modes. Yet there are many other possible origins of zero-bias peaks in nanowires—for example, weak localization, Andreev bound states, or the Kondo effect. Here, we discuss observations of differential-conductance peaks at zero-bias voltage in non-superconducting electronic transport through a 3D topological insulator (Bi1.33Sb0.67)Se3 nanowire. The zero-bias conductance peaks show logarithmic temperature dependence and often linear splitting with magnetic fields, both of which are signatures of the Kondo effect in quantum dots. We characterize the zero-bias peaks and discuss their origin. PMID:26911258
Kondo-like zero-bias conductance anomaly in a three-dimensional topological insulator nanowire
Cho, Sungjae; Zhong, Ruidan; Schneeloch, John A.; Gu, Genda; Mason, Nadya
2016-02-25
Zero-bias anomalies in topological nanowires have recently captured significant attention, as they are possible signatures of Majorana modes. Yet there are many other possible origins of zero-bias peaks in nanowires—for example, weak localization, Andreev bound states, or the Kondo effect. Here, we discuss observations of differential-conductance peaks at zero-bias voltage in non-superconducting electronic transport through a 3D topological insulator (Bi1.33Sb0.67)Se3 nanowire. The zero-bias conductance peaks show logarithmic temperature dependence and often linear splitting with magnetic fields, both of which are signatures of the Kondo effect in quantum dots. As a result, we characterize the zero-bias peaks and discuss their origin.
Kondo-like zero-bias conductance anomaly in a three-dimensional topological insulator nanowire
NASA Astrophysics Data System (ADS)
Cho, Sungjae; Zhong, Ruidan; Schneeloch, John A.; Gu, Genda; Mason, Nadya
2016-02-01
Zero-bias anomalies in topological nanowires have recently captured significant attention, as they are possible signatures of Majorana modes. Yet there are many other possible origins of zero-bias peaks in nanowires—for example, weak localization, Andreev bound states, or the Kondo effect. Here, we discuss observations of differential-conductance peaks at zero-bias voltage in non-superconducting electronic transport through a 3D topological insulator (Bi1.33Sb0.67)Se3 nanowire. The zero-bias conductance peaks show logarithmic temperature dependence and often linear splitting with magnetic fields, both of which are signatures of the Kondo effect in quantum dots. We characterize the zero-bias peaks and discuss their origin.
Kondo-like zero-bias conductance anomaly in a three-dimensional topological insulator nanowire.
Cho, Sungjae; Zhong, Ruidan; Schneeloch, John A; Gu, Genda; Mason, Nadya
2016-02-25
Zero-bias anomalies in topological nanowires have recently captured significant attention, as they are possible signatures of Majorana modes. Yet there are many other possible origins of zero-bias peaks in nanowires--for example, weak localization, Andreev bound states, or the Kondo effect. Here, we discuss observations of differential-conductance peaks at zero-bias voltage in non-superconducting electronic transport through a 3D topological insulator (Bi(1.33)Sb(0.67))Se3 nanowire. The zero-bias conductance peaks show logarithmic temperature dependence and often linear splitting with magnetic fields, both of which are signatures of the Kondo effect in quantum dots. We characterize the zero-bias peaks and discuss their origin.
NASA Astrophysics Data System (ADS)
Huang, Shin-Ming; Tsai, Wei-Feng; Chung, Chung-Hou; Mou, Chung-Yu
2016-02-01
The ground state of the large Hubbard U limit of a honeycomb lattice near half filling is known to be a singlet d +i d -wave superconductor. It is also known that this d +i d superconductor exhibits a chiral p +i p pairing locally at the Dirac cone, characterized by a 2 Z topological invariant. By constructing a dual transformation, we demonstrate that this 2 Z topological superconductor is equivalent to a collection of two topological ferromagnetic insulators. As a result of the duality, the topology of the electronic structures for a d +i d superconductor is controllable via the change of the chemical potential by tuning the gate voltage. In particular, instead of always being a chiral superconductor, we find that the d +i d superconductor undergoes a topological phase transition from a chiral superconductor to a quasihelical superconductor as the gap amplitude or the chemical potential decreases. The quasihelical superconducting phase is found to be characterized by a topological invariant in the pseudospin charge sector with vanishing both the Chern number and the spin Chern number. We further elucidate the topological phase transition by analyzing the relationship between the topological invariant and the rotation symmetry. Due to the angular momentum carried by the gap function and spin-orbit interactions, we show that by placing d +i d superconductors in proximity to ferromagnets, varieties of chiral superconducting phases characterized by higher Chern numbers can be accessed, providing a platform for hosting large numbers of Majorana modes at edges.
Nonlinear conduction via solitons in a topological mechanical insulator
Chen, Bryan Gin-ge; Upadhyaya, Nitin; Vitelli, Vincenzo
2014-01-01
Networks of rigid bars connected by joints, termed linkages, provide a minimal framework to design robotic arms and mechanical metamaterials built of folding components. Here, we investigate a chain-like linkage that, according to linear elasticity, behaves like a topological mechanical insulator whose zero-energy modes are localized at the edge. Simple experiments we performed using prototypes of the chain vividly illustrate how the soft motion, initially localized at the edge, can in fact propagate unobstructed all of the way to the opposite end. Using real prototypes, simulations, and analytical models, we demonstrate that the chain is a mechanical conductor, whose carriers are nonlinear solitary waves, not captured within linear elasticity. Indeed, the linkage prototype can be regarded as the simplest example of a topological metamaterial whose protected mechanical excitations are solitons, moving domain walls between distinct topological mechanical phases. More practically, we have built a topologically protected mechanism that can perform basic tasks such as transporting a mechanical state from one location to another. Our work paves the way toward adopting the principle of topological robustness in the design of robots assembled from activated linkages as well as in the fabrication of complex molecular nanostructures. PMID:25157161
Topological Anderson insulator induced by inter-cell hopping disorder
Lv, Shu-Hui; Song, Juntao Li, Yu-Xian
2013-11-14
We have studied in detail the influence of same-orbit and different-orbit hopping disorders in HgTe/CdTe quantum wells. Intriguingly, similar to the behavior of the on-site Anderson disorder, a phase transition from a topologically trivial phase to a topological phase is induced at a proper strength of the same-orbit hopping disorder. For different-orbit hopping disorder, however, the phase transition does not occur. The results have been analytically verified by using effective medium theory. A consistent conclusion can be obtained by comparing phase diagrams, conductance, and conductance fluctuations. In addition, the influence of Rashba spin-orbit interaction (RSOI) on the system has been studied for different types of disorder, and the RSOI shows different influence on topological phase at different disorders. The topological phase induced by same-orbit hopping disorder is more robust against the RSOI than that induced by on-site Anderson disorder. For different-orbit hopping disorder, no matter whether the RSOI is included or not, the phase transition does not occur. The results indicate, whether or not the topological Anderson insulator can be observed depends on a competition between the different types of the disorder as well as the strength of the RSOI in a system.
Electric-field tuning of the surface band structure of topological insulator Sb2Te3 thin films.
Zhang, Tong; Ha, Jeonghoon; Levy, Niv; Kuk, Young; Stroscio, Joseph
2013-08-01
We measured the response of the surface state spectrum of epitaxial Sb(2)Te(3) thin films to applied gate electric fields by low temperature scanning tunneling microscopy. The gate dependent shift of the Fermi level and the screening effect from bulk carriers vary as a function of film thickness. We observed a gap opening at the Dirac point for films thinner than four quintuple layers, due to the coupling of the top and bottom surfaces. Moreover, the top surface state band gap of the three quintuple layer films was found to be tunable by a back gate, indicating the possibility of observing a topological phase transition in this system. Our results are well explained by an effective model of 3D topological insulator thin films with structure inversion asymmetry, indicating that three quintuple layer Sb(2)Te(3) films are topologically nontrivial and belong to the quantum spin Hall insulator class.
Photoemission spectroscopy studies of new topological insulator materials
NASA Astrophysics Data System (ADS)
Weber, Andrew Patton
As the size of a solid shrinks, the ratio of surface area to bulk volume grows and surface effects become more important. In a world where technologies advance with the shrinking size of electronic devices, one phase of matter has emerged which is fit for the near future of surface-dominated performance. Moreover, it has brought a new set of ideas to solid-state physics and chemistry, especially the understanding that the discipline of topology can be applied to classify the electron band structures. The topological insulator phase yields an exotic metal surface state in which the orientation of the electron's spin is locked perpendicular to its momentum. This property suppresses backscattering (making it possible to pass spin-polarized currents through the material without loss), offers a crucial ingredient for innovative approaches to quantum computation, and provides the basis for observing unique magnetoelectric effects. However, the surface states of materials in the topological insulator phase can wildly differ, so it is of interest to systematically characterize new materials to understand how the structure in position-space is related to the spin-resolved structure of electrons in energy- and momentum-space. We will discuss this relationship as it is probed through spin- and angle-resolved photoemission spectroscopy experiments on three topological (Bi2)m(Bi2Se3)n superlattices: (a) Bi2Se3 (m = 0, n = 1), (b) Bi4Se3 (m = 1, n = 1), and (c) BiSe (m = 1, n = 2). Our studies have not only proven the topological nature of these materials, but also demonstrate how bulk band structure and polar chemical bonding control the surface metal's concentration, dispersion, and spin-orbital character. Case (a) is considered to provide an ideal model of the topological surface metal. Case (b) provides the three important findings: (1) the chemical identity of the surface-termination controls the orbital composition and energy distribution of the surface states, (2) there
MBE growth of topological insulator Bi2Se3 and Bi2Te3 films
NASA Astrophysics Data System (ADS)
Zhang, Tong; Levy, Niv; Song, Young Jae; Chae, Jungseok; Stroscio, Joseph A.
2011-03-01
Three-dimensional (3D) topological insulators are a new state of quantum matter with a band gap in bulk but gapless states on the surface. The surface states with spin helicity can be the host of many striking quantum phenomena. In this work, we use ultrahigh vacuum molecular beam epitaxy to grow atomically flat topological insulator (TI) Bi2Se3 and Bi2Te3 films. High quality TI films were obtained using epitaxial graphene on SiC as a substrate for TI growth. The growth dynamics was characterized by real time reflection high-energy electron diffraction (RHEED). The growth condition was optimized by adjusting for proper flux rate and substrate temperature while monitoring the RHEED patterns. In situ Auger spectroscopy and scanning tunneling microscopy (STM) measurements at 5K are used to study the as-grown films for their stoichiometry and defect density. We expect these MBE grown samples will provide a good candidate for studying the topological surface states and related phenomena, which will be studied using scanning tunneling spectroscopy at millikelvin temperatures
Surface-Dominated Transport on a Bulk Topological Insulator
NASA Astrophysics Data System (ADS)
Hofmann, Philip; Barreto, Lucas; Kühnemund, Lisa; Edler, Frederik; Tegenkamp, Christoph; Mi, Jianli; Bremholm, Martin; Brummerstedt Iversen, Bo; Frydendahl, Christian; Bianchi, Marco
2014-03-01
Topological insulators are guaranteed to support metallic surface states on an insulating bulk, and one should thus expect that the electronic transport in these materials is dominated by the surfaces states. Alas, due to the high remaining bulk conductivity, surface contributions to transport have so-far only been singled out indirectly via quantum oscillation, or for devices based on gated and doped topological insulator thin films, a situation in which the surface carrier mobility could be limited by defect and interface scattering. Here we present a direct measurement of surface-dominated conduction on an atomically clean surface of Bi2Te2Se. Using nano-scale four point setups with variable contact distance, we show that the transport at 30 K is two-dimensional rather than three-dimensional and by combining these measurements with angle-resolved photoemission results from the same crystals, we find a surface state mobility of 390(30) cm2V-1s-1 at 30 K at a carrier concentration of 8.71(7) ×1012 cm-2.
Universal anyons at the irradiated surface of topological insulator.
Wang, Rui; Chen, Wei; Wang, Baigeng; Xing, D Y
2016-01-01
Anyons have recently received great attention due to their promising application in topological quantum computation. The best validated system that enjoys the anyonic excitations are the Laughlin states. The quasi-particles in Laughlin states are neither fermions nor bosons but possess the discrete statistical angle θ = π/m, with m being an integer. Here we report a possible realization of the universal Abelian anyons, whose statistical angle can be tuned continuously by external parameters and can take any arbitrary values interpolating θ = 0 and θ = π. The proposed setup is the surface state of a three dimensional topological insulator driven by an amplitude-modulated circularly-polarized light. It is found that the external field leads to a particular Floquet phase, which is a two-spatial-dimensional analogy of the Weyl semimetal phase in the Floquet first Brillouin zone. The chiral anomaly of this phase results in a U(1) Chern-Simons gauge theory with a tunable Floquet Chern number. Owing to this underlying gauge field theory, the irradiated surface of topological insulator constitutes a promising platform for the observation of the universal anyons. PMID:26830323
Classification and characterization of topological insulators and superconductors
NASA Astrophysics Data System (ADS)
Mong, Roger
Topological insulators (TIs) are a new class of materials which, until recently, have been overlooked despite decades of study in band insulators. Like semiconductors and ordinary insulators, TIs have a bulk gap, but feature robust surfaces excitations which are protected from disorder and interactions which do not close the bulk gap. TIs are distinguished from ordinary insulators not by the symmetries they possess (or break), but by topological invariants characterizing their bulk band structures. These two pictures, the existence of gapless surface modes, and the nontrivial topology of the bulk states, yield two contrasting approaches to the study of TIs. At the heart of the subject, they are connected by the bulk-boundary correspondence, relating bulk and surface degrees of freedom. In this work, we study both aspects of topological insulators, at the same time providing an illumination to their mysterious connection. First, we present a systematic approach to the classification of bulk states of systems with inversion-like symmetries, deriving a complete set of topological invariants for such ensembles. We find that the topological invariants in all dimensions may be computed algebraically via exact sequences. In particular, systems with spatial inversion symmetries in one-, two-, and three-dimensions can be classified by, respectively, 2, 5, and 11 integer invariants. The values of these integers are related to physical observables such as polarization, Hall conductivity, and magnetoelectric coupling. We also find that, for systems with “antiferromagnetic symmetry,” there is a
Universal anyons at the irradiated surface of topological insulator
Wang, Rui; Chen, Wei; Wang, Baigeng; Xing, D. Y.
2016-01-01
Anyons have recently received great attention due to their promising application in topological quantum computation. The best validated system that enjoys the anyonic excitations are the Laughlin states. The quasi-particles in Laughlin states are neither fermions nor bosons but possess the discrete statistical angle θ = π/m, with m being an integer. Here we report a possible realization of the universal Abelian anyons, whose statistical angle can be tuned continuously by external parameters and can take any arbitrary values interpolating θ = 0 and θ = π. The proposed setup is the surface state of a three dimensional topological insulator driven by an amplitude-modulated circularly-polarized light. It is found that the external field leads to a particular Floquet phase, which is a two-spatial-dimensional analogy of the Weyl semimetal phase in the Floquet first Brillouin zone. The chiral anomaly of this phase results in a U(1) Chern-Simons gauge theory with a tunable Floquet Chern number. Owing to this underlying gauge field theory, the irradiated surface of topological insulator constitutes a promising platform for the observation of the universal anyons. PMID:26830323
NASA Astrophysics Data System (ADS)
Stehno, M. P.; Orlyanchik, V.; Nugroho, C. D.; Ghaemi, P.; Brahlek, M.; Koirala, N.; Oh, S.; Van Harlingen, D. J.
2016-01-01
Topological insulators (TIs) hold great promise for topological quantum computation in solid-state systems. Recently, several groups reported experimental data suggesting that signatures of Majorana modes have been observed in topological insulator Josephson junctions (TIJJs). A prerequisite for the exploration of Majorana physics is to obtain a good understanding of the properties of low-energy Andreev bound states (ABSs) in a material with a topologically nontrivial band structure. Here, we present experimental data and a theoretical analysis demonstrating that the band-structure inversion close to the surface of a TI has observable consequences for supercurrent transport in TIJJs prepared on surface-doped Bi2Se3 thin films. Electrostatic carrier depletion of the film surface leads to an abrupt drop in the critical current of such devices. The effect can be understood as a relocation of low-energy ABSs from a region deeper in the bulk of the material to the more strongly disordered surface, which is driven by the topology of the effective band structure in the presence of surface dopants.
NASA Astrophysics Data System (ADS)
Zahid Hasan, M.; Xu, Su-Yang; Bian, Guang
2015-12-01
Unlike string theory, topological physics in lower dimensional condensed matter systems is an experimental reality since the bulk-boundary correspondence can be probed experimentally in lower dimensions. In addition, recent experimental discoveries of non-quantum-Hall-like topological insulators, topological superconductors, Weyl semimetals and other topological states of matter also signal a clear departure from the quantum-Hall-effect-like transport paradigm that has dominated the field since the 1980s. It is these new forms of matter that enabled realizations of topological-Dirac, Weyl cones, helical-Cooper-pairs, Fermi-arc-quasiparticles and other emergent phenomena in fine-tuned photoemission (ARPES) experiments since ARPES experiments directly allow the study of bulk-boundary (topological) correspondence. In this proceeding we provide a brief overview of the key experiments and discuss our perspectives regarding the new research frontiers enabled by these experiments. Taken collectively, we argue in favor of the emergence of ‘topological-condensed-matter-physics’ in laboratory experiments for which a variety of theoretical concepts over the last 80 years paved the way.
Ge, Lixin; Zhan, Tianrong; Han, Dezhuan; Liu, Xiaohan; Zi, Jian
2015-01-01
Topological insulators (TIs) exhibit many exotic properties. In particular, a topological magneto-electric (TME) effect, quantized in units of the fine structure constant, exists in TIs. Here, we theoretically study the scattering properties of electromagnetic waves by TI circular cylinders particularly in the Rayleigh scattering limit. Compared with ordinary dielectric cylinders, the scattering by TI cylinders shows many unusual features due to the TME effect. Two proposals are suggested to determine the TME effect of TIs simply by measuring the electric-field components of scattered waves in the far field at one or two scattering angles. Our results could also offer a way to measure the fine structure constant. PMID:25609462
Oliver E. Buckley Condensed Matter Prize Lecture: Topological insulators and superconductors
NASA Astrophysics Data System (ADS)
Zhang, Shoucheng
2012-02-01
In this talk I shall briefly review the basic concepts of topological insulators and superconductors, and recall the history of the discovery of the first topological insulator in nature, the HgTe material. I will then describe some striking physical properties of topological insulators and their possible applications. [4pt] X. L. Qi, S. C. Zhang, Phys. Today 63, 33 (2010). X. L. Qi, S. C. Zhang, Rev. Mod. Phys. 83, 1057 (2011).
NASA Astrophysics Data System (ADS)
Murakami, Shuichi; Takahashi, Ryuji; Tretiakov, O. A.; Abanov, Ar; Sinova, Jairo
2011-12-01
Topological insulators have gapless edge/surface states with novel transport properties. Among these, there are two classes of perfectly conducting channels which are free from backscattering: the edge states of two-dimensional topological insulators and the one-dimensional states localized on dislocations of certain three-dimensional topological insulators. We show how these novel states affect thermoelectric properties of the systems and discuss possibilities to improve the thermoelectric figure of merit using these materials with perfectly conducting channels.
Mirror-symmetry protected non-TRIM surface state in the weak topological insulator Bi2TeI.
Rusinov, I P; Menshchikova, T V; Isaeva, A; Eremeev, S V; Koroteev, Yu M; Vergniory, M G; Echenique, P M; Chulkov, E V
2016-02-11
Strong topological insulators (TIs) support topological surfaces states on any crystal surface. In contrast, a weak, time-reversal-symmetry-driven TI with at least one non-zero v1, v2, v3 ℤ2 index should host spin-locked topological surface states on the surfaces that are not parallel to the crystal plane with Miller indices (v1 v2 v3). On the other hand, mirror symmetry can protect an even number of topological states on the surfaces that are perpendicular to a mirror plane. Various symmetries in a bulk material with a band inversion can independently preordain distinct crystal planes for realization of topological states. Here we demonstrate the first instance of coexistence of both phenomena in the weak 3D TI Bi2TeI which (v1 v2 v3) surface hosts a gapless spin-split surface state protected by the crystal mirror-symmetry. The observed topological state has an even number of crossing points in (r-M)the directions of the 2D Brillouin zone due to a non-TRIM bulk-band inversion. Our findings shed light on hitherto uncharted features of the electronic structure of weak topological insulators and open up new vistas for applications of these materials in spintronics.
Mirror-symmetry protected non-TRIM surface state in the weak topological insulator Bi2TeI
Rusinov, I. P.; Menshchikova, T. V.; Isaeva, A.; Eremeev, S. V.; Koroteev, Yu. M.; Vergniory, M. G.; Echenique, P. M.; Chulkov, E. V.
2016-01-01
Strong topological insulators (TIs) support topological surfaces states on any crystal surface. In contrast, a weak, time-reversal-symmetry-driven TI with at least one non-zero v1, v2, v3 ℤ2 index should host spin-locked topological surface states on the surfaces that are not parallel to the crystal plane with Miller indices (v1 v2 v3). On the other hand, mirror symmetry can protect an even number of topological states on the surfaces that are perpendicular to a mirror plane. Various symmetries in a bulk material with a band inversion can independently preordain distinct crystal planes for realization of topological states. Here we demonstrate the first instance of coexistence of both phenomena in the weak 3D TI Bi2TeI which (v1 v2 v3) surface hosts a gapless spin-split surface state protected by the crystal mirror-symmetry. The observed topological state has an even number of crossing points in the directions of the 2D Brillouin zone due to a non-TRIM bulk-band inversion. Our findings shed light on hitherto uncharted features of the electronic structure of weak topological insulators and open up new vistas for applications of these materials in spintronics. PMID:26864814
Mirror-symmetry protected non-TRIM surface state in the weak topological insulator Bi2TeI.
Rusinov, I P; Menshchikova, T V; Isaeva, A; Eremeev, S V; Koroteev, Yu M; Vergniory, M G; Echenique, P M; Chulkov, E V
2016-01-01
Strong topological insulators (TIs) support topological surfaces states on any crystal surface. In contrast, a weak, time-reversal-symmetry-driven TI with at least one non-zero v1, v2, v3 ℤ2 index should host spin-locked topological surface states on the surfaces that are not parallel to the crystal plane with Miller indices (v1 v2 v3). On the other hand, mirror symmetry can protect an even number of topological states on the surfaces that are perpendicular to a mirror plane. Various symmetries in a bulk material with a band inversion can independently preordain distinct crystal planes for realization of topological states. Here we demonstrate the first instance of coexistence of both phenomena in the weak 3D TI Bi2TeI which (v1 v2 v3) surface hosts a gapless spin-split surface state protected by the crystal mirror-symmetry. The observed topological state has an even number of crossing points in (r-M)the directions of the 2D Brillouin zone due to a non-TRIM bulk-band inversion. Our findings shed light on hitherto uncharted features of the electronic structure of weak topological insulators and open up new vistas for applications of these materials in spintronics. PMID:26864814
Mirror-symmetry protected non-TRIM surface state in the weak topological insulator Bi2TeI
NASA Astrophysics Data System (ADS)
Rusinov, I. P.; Menshchikova, T. V.; Isaeva, A.; Eremeev, S. V.; Koroteev, Yu. M.; Vergniory, M. G.; Echenique, P. M.; Chulkov, E. V.
2016-02-01
Strong topological insulators (TIs) support topological surfaces states on any crystal surface. In contrast, a weak, time-reversal-symmetry-driven TI with at least one non-zero v1, v2, v3 ℤ2 index should host spin-locked topological surface states on the surfaces that are not parallel to the crystal plane with Miller indices (v1 v2 v3). On the other hand, mirror symmetry can protect an even number of topological states on the surfaces that are perpendicular to a mirror plane. Various symmetries in a bulk material with a band inversion can independently preordain distinct crystal planes for realization of topological states. Here we demonstrate the first instance of coexistence of both phenomena in the weak 3D TI Bi2TeI which (v1 v2 v3) surface hosts a gapless spin-split surface state protected by the crystal mirror-symmetry. The observed topological state has an even number of crossing points in the directions of the 2D Brillouin zone due to a non-TRIM bulk-band inversion. Our findings shed light on hitherto uncharted features of the electronic structure of weak topological insulators and open up new vistas for applications of these materials in spintronics.
Interacting topological insulator and emergent grand unified theory
NASA Astrophysics Data System (ADS)
You, Yi-Zhuang; Xu, Cenke
2015-03-01
Motivated by the Pati-Salam grand unified theory [J. C. Pati and A. Salam, Phys. Rev. D 10, 275 (1974), 10.1103/PhysRevD.10.275], we study (4 +1 )d topological insulators with SU (4 ) ×SU (2) 1×SU (2) 2 symmetry, whose (3 +1 )d boundary has 16 flavors of left-chiral fermions, which form representations (4 ,2 ,1 ) and (4 ¯,1 ,2 ) . The key result we obtain is that, without any interaction, this topological insulator has a Z classification, namely, any quadratic fermion mass operator at the (3 +1 )d boundary is prohibited by the symmetries listed above; while under interaction, this system becomes trivial, namely, its (3 +1 )d boundary can be gapped out by a properly designed short-range interaction without generating nonzero vacuum expectation value of any fermion bilinear mass, or in other words, its (3 +1 )d boundary can be driven into a "strongly-coupled symmetric gapped (SCSG) phase." Based on this observation, we propose that after coupling the system to a dynamical SU (4 ) ×SU (2) 1×SU (2) 2 lattice gauge field, the Pati-Salam GUT can be fully regularized as the boundary states of a (4 +1 )d topological insulator with a thin fourth spatial dimension, the thin fourth dimension makes the entire system generically a (3 +1 )d system. The mirror sector on the opposite boundary will not interfere with the desired GUT, because the mirror sector is driven to the SCSG phase by a carefully designed interaction and is hence decoupled from the GUT.
NASA Astrophysics Data System (ADS)
Zuo, Zheng-Wei; Kang, Da-wei; Wang, Zhao-Wu; Li, Liben
2016-08-01
The tunneling junction between one-dimensional topological superconductor and integer (fractional) topological insulator (TI), realized via point contact, is investigated theoretically with bosonization technology and renormalization group methods. For the integer TI case, in a finite range of edge interaction parameter, there is a non-trivial stable fixed point which corresponds to the physical picture that the edge of TI breaks up into two sections at the junction, with one side coupling strongly to the Majorana fermion and exhibiting perfect Andreev reflection, while the other side decouples, exhibiting perfect normal reflection at low energies. This fixed point can be used as a signature of the Majorana fermion and tested by nowadays experiment techniques. For the fractional TI case, the universal low-energy transport properties are described by perfect normal reflection, perfect Andreev reflection, or perfect insulating fixed points dependent on the filling fraction and edge interaction parameter of fractional TI.
Tunable thermopower in a graphene-based topological insulator
NASA Astrophysics Data System (ADS)
Shevtsov, Oleksii; Carmier, Pierre; Groth, Christoph; Waintal, Xavier; Carpentier, David
2012-06-01
Following the recent proposal by Weeks , which suggested that indium (or thallium) adatoms deposited on the surface of graphene should turn the latter into a quantum spin Hall (QSH) insulator characterized by a sizable gap, we perform a systematic study of the transport properties of this system as a function of the density of randomly distributed adatoms. While the samples are, by construction, very disordered, we find that they exhibit an extremely stable QSH phase with no signature of the spatial inhomogeneities of the adatom configuration. We find that a simple rescaling of the spin-orbit coupling parameter allows us to account for the behavior of the inhomogeneous system using a homogeneous model. This robustness opens the route to a much easier experimental realization of this topological insulator. We additionally find this material to be a very promising candidate for thermopower generation with a target temperature tunable from 1 to 80K and an efficiency ZT≈1.
Helical Quantum Edge Gears in 2D Topological Insulators
NASA Astrophysics Data System (ADS)
Chou, Yang-Zhi; Levchenko, Alex; Foster, Matthew
A remarkable and as-yet-unexploited aspect of topological insulator (TI) physics is the topology of the edge states, i.e. the fact that the edge liquid of a 2D TI forms a closed, unbreakable loop in the absence of electrical contacts or magnetic fields. We propose a novel experimental setup in which edge loops rotate as interlocking ``gears'' through Coulomb drag, in TIs with Rashba spin-orbit coupling. We show that two-terminal transport can measure the Luttinger liquid parameter K, a quantity that is otherwise notoriously difficult to measure. In the low-temperature (T --> 0) perfect drag regime, the conductance is (e2 / h) (2 K + 1) / (K + 1) . At higher T we predict a conductivity ~T - 4 K + 3 . Our results should trigger new experiments and may open a new venue for edge gear-based electronic devices.Ref: Phys. Rev. Lett. 115, 186404 (2015)
Thermoelectric efficiency of topological insulators in a magnetic field
NASA Astrophysics Data System (ADS)
Tretiakov, O. A.; Abanov, Ar.; Sinova, Jairo
2012-04-01
We study the thermoelectric properties of three-dimensional topological insulators in magnetic fields with many holes (or pores) in the bulk. We find that at a high density of these holes in the transport direction the thermoelectric figure of merit, ZT, can be large due to the contribution of the topologically protected conducting surfaces and the suppressed phonon thermal conductivity. By applying an external magnetic field, a subgap can be induced in the surface states' spectrum. We show that the thermoelectric efficiency can be controlled by this tunable subgap leading to values of ZT much greater than 1. Such high values of ZT for reasonable system parameters and its tunability by a magnetic field make this system a strong candidate for applications in the heat management of nanodevices, especially at low temperatures.
Giant topological insulator gap in graphene with 5d adatoms.
Hu, Jun; Alicea, Jason; Wu, Ruqian; Franz, Marcel
2012-12-28
Two-dimensional topological insulators (2D TIs) have been proposed as platforms for many intriguing applications, ranging from spintronics to topological quantum information processing. Realizing this potential will likely be facilitated by the discovery of new, easily manufactured materials in this class. With this goal in mind, we introduce a new framework for engineering a 2D TI by hybridizing graphene with impurity bands arising from heavy adatoms possessing partially filled d shells, in particular, osmium and iridium. First-principles calculations predict that the gaps generated by this means exceed 0.2 eV over a broad range of adatom coverage; moreover, tuning of the Fermi level is not required to enter the TI state. The mechanism at work is expected to be rather general and may open the door to designing new TI phases in many materials.
Tuning surface Dirac valleys by strain in topological crystalline insulators
NASA Astrophysics Data System (ADS)
Zhao, Lu; Wang, Jianfeng; Gu, Bing-Lin; Duan, Wenhui
2015-05-01
A topological crystalline insulator has an even number of Dirac cones (i.e., multiple valleys) in its surface band structure, thus potentially leading to valleytronic applications such as graphene. Using the density-functional-theory method, we systematically investigate the strain-induced evolution of topological surface states on the SnTe(111) surface. Our results show that compressive strain can shift the Dirac cones at the Γ ¯ and M ¯ valleys to different extents (even oppositely) in energy, while the tensile strain can induce different band gaps at the valleys due to the enhanced penetration depths of surface states. Exploiting a strain-induced nanostructure with well-defined edges on the (111) surface, we demonstrate strong valley-selective filtering for massless Dirac fermions by dynamically applying local external pressure. Our findings may pave the way for strain-engineered valley-resolved manipulation of Dirac fermions with high tunability and scalability.
The Mott-Hubbard Insulator: localization and topological quantum order
NASA Astrophysics Data System (ADS)
Martin, Richard M.
2010-03-01
An insulating state of condensed matter is characterized by localization of the center of mass of the electrons. This criterion can be addressed in terms of the ground state on a torus with boundary conditions ψK(x1+L,x2, ) = exp( i K L) ψK(x1,x2, ). As shown by Kohn[1], in an insulator the energy is insensitive to K as L ->∞, whereas in an ideal metal it increases as K^2. In addition, Souza, et al. derived expressions for the localization length in terms of the wavefunction as a function of K. The present work generalizes the arguments to provide a fundamental distinction between ``band'' and ``Mott-Hubbard'' insulators. The criteria involve only counting of electrons and experimentally measurable quantities independent of models, and they lead to the requirement that a Mott-Hubbard insulator with no broken local symmetry must have topological quantum order.[4pt] [1] W. Kohn, Phys. Rev. 133, A171 (1964)[0pt] [2] I. Souza, et al., Phys. Rev. B 62, 1666 (2000).
Helical Quantum Edge Gears in 2D Topological Insulators.
Chou, Yang-Zhi; Levchenko, Alex; Foster, Matthew S
2015-10-30
We show that two-terminal transport can measure the Luttinger liquid (LL) parameter K, in helical LLs at the edges of two-dimensional topological insulators (TIs) with Rashba spin-orbit coupling. We consider a Coulomb drag geometry with two coplanar TIs and short-ranged spin-flip interedge scattering. Current injected into one edge loop induces circulation in the second, which floats without leads. In the low-temperature (T→0) perfect drag regime, the conductance is (e^{2}/h)(2K+1)/(K+1). At higher T, we predict a conductivity ~T^{-4K+3}. The conductivity for a single edge is also computed.
Helical Quantum Edge Gears in 2D Topological Insulators
NASA Astrophysics Data System (ADS)
Chou, Yang-Zhi; Levchenko, Alex; Foster, Matthew S.
2015-10-01
We show that two-terminal transport can measure the Luttinger liquid (LL) parameter K , in helical LLs at the edges of two-dimensional topological insulators (TIs) with Rashba spin-orbit coupling. We consider a Coulomb drag geometry with two coplanar TIs and short-ranged spin-flip interedge scattering. Current injected into one edge loop induces circulation in the second, which floats without leads. In the low-temperature (T →0 ) perfect drag regime, the conductance is (e2/h )(2 K +1 )/(K +1 ). At higher T , we predict a conductivity ˜T-4 K +3. The conductivity for a single edge is also computed.
Inverse spin galvanic effect in topological-insulator based heterostructures
NASA Astrophysics Data System (ADS)
Rodriguez-Vega, Martin; Schwiete, Georg; Sinova, Jairo; Rossi, Enrico
2015-03-01
We study the inverse spin galvanic effect in heterostructures formed by a layer of a three dimensional strong topological insulator (TI) and a magnetic material. We consider different configurations for the heterostructure and for the contacts. We carefully treat the effect on the TI bands of the proximity of a magnetic material and take into account both intra-band and inter-band contributions to the current-induced spin polarization of the TI surface states. Finally, we discuss the relevance of our results for recent experiments. Work supported by ONR-N00014-13-1-0321, ACS-PRF # 53581-DNI5, and the Jeffress Memorial Trust.
Enhanced Thermoelectric Performance and Anomalous Seebeck Effects in Topological Insulators
NASA Astrophysics Data System (ADS)
Xu, Yong; Gan, Zhongxue; Zhang, Shou-Cheng
2014-06-01
Improving the thermoelectric figure of merit zT is one of the greatest challenges in material science. The recent discovery of topological insulators (TIs) offers new promise in this prospect. In this work, we demonstrate theoretically that zT is strongly size dependent in TIs, and the size parameter can be tuned to enhance zT to be significantly greater than 1. Furthermore, we show that the lifetime of the edge states in TIs is strongly energy dependent, leading to large and anomalous Seebeck effects with an opposite sign to the Hall effect. These striking properties make TIs a promising material for thermoelectric science and technology.
Josephson junction through a disordered topological insulator with helical magnetization
NASA Astrophysics Data System (ADS)
Zyuzin, Alexander; Alidoust, Mohammad; Loss, Daniel
2016-06-01
We study supercurrent and proximity vortices in a Josephson junction made of disordered surface states of a three-dimensional topological insulator with a proximity induced in-plane helical magnetization. In a regime where the rotation period of helical magnetization is larger than the junction width, we find supercurrent 0 -π crossovers as a function of junction thickness, magnetization strength, and parameters inherent to the helical modulation and surface states. The supercurrent reversals are associated with proximity induced vortices, nucleated along the junction width, where the number of vortices and their locations can be manipulated by means of the superconducting phase difference and the parameters mentioned above.
Fano q reversal in topological insulator Bi2Se3
NASA Astrophysics Data System (ADS)
Dordevic, S. V.; Foster, G. M.; Wolf, M. S.; Stojilovic, N.; Lei, H.; Petrovic, C.; Chen, Z.; Li, Z. Q.; Tung, L. C.
We studied magneto-optical response of a canonical topological insulator Bi2Se3 with the goal of addressing a controversial issue of electron-phonon coupling. Magnetic-field induced modifications of reflectance are very pronounced in the infrared part of the spectrum, indicating strong electron-phonon coupling. This coupling causes an asymmetric line-shape of the 60 cm-1 phonon mode, and is analyzed within the Fano formalism. The analysis reveals that the Fano asymmetry parameter (q) changes sign when the cyclotron resonance is degenerate with the phonon mode. To the best of our knowledge this is the first example of magnetic field driven q-reversal.
Electrified magnetic catalysis in three-dimensional topological insulators
NASA Astrophysics Data System (ADS)
Gorbar, E. V.; Miransky, V. A.; Shovkovy, I. A.; Sukhachov, P. O.
2016-09-01
The gap equations for the surface quasiparticle propagators in a slab of three-dimensional topological insulator in external electric and magnetic fields perpendicular to the slab surfaces are analyzed and solved. A different type of magnetic catalysis is revealed with the dynamical generation of both Haldane and Dirac gaps. Its characteristic feature manifests itself in the crucial role that the electric field plays in dynamical symmetry breaking and the generation of a Dirac gap in the slab. It is argued that, for a sufficiently large external electric field, the ground state of the system is a phase with a homogeneous surface charge density.
Magnetic impurities on the surface of a topological insulator
Liu, Qin; Liu, Chao-Xing; Xu, Cenke; Qi, Xiao-Liang; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.
2010-03-25
The surface states of a topological insulator are described by an emergent relativistic massless Dirac equation in 2+1 dimensions. In contrast to graphene, there is an odd number of Dirac points, and the electron spin is directly coupled to the momentum. We show that a magnetic impurity opens up a local gap and suppresses the local density of states. Furthermore, the Dirac electronic states mediate an RKKY interaction among the magnetic impurities which is always ferromagnetic, whenever the chemical potential lies near the Dirac point. These effects can be directly measured in STM experiments. We also study the case of quenched disorder through a renormalization group analysis.
Plasmonics in Dirac systems: from graphene to topological insulators.
Stauber, Tobias
2014-03-26
Recent developments in the emerging field of plasmonics in graphene and other Dirac systems are reviewed and a comprehensive introduction to the standard models and techniques is given. In particular, we discuss intrinsic plasmon excitation of single and bilayer graphene via hydrodynamic equations and the random phase approximation, but also comment on double and multilayer structures. Additionally, we address Dirac systems in the retardation limit and also with large spin–orbit coupling including topological insulators. Finally, we summarize basic properties of the charge, current and photon linear response functions in an appendix.
Thermodynamic signatures of edge states in topological insulators
NASA Astrophysics Data System (ADS)
Quelle, A.; Cobanera, E.; Smith, C. Morais
2016-08-01
Topological insulators are states of matter distinguished by the presence of symmetry-protected metallic boundary states. These edge modes have been characterized in terms of transport and spectroscopic measurements, but a thermodynamic description has been lacking. The challenge arises because in conventional thermodynamics the potentials are required to scale linearly with extensive variables such as volume, which does not allow for a general treatment of boundary effects. In this paper, we overcome this challenge with Hill thermodynamics. In this extension of the thermodynamic formalism, the grand potential is split into an extensive, conventional contribution, and the subdivision potential, which is the central construct of Hill's theory. For topologically nontrivial electronic matter, the subdivision potential captures measurable contributions to the density of states and the heat capacity: it is the thermodynamic manifestation of the topological edge structure. Furthermore, the subdivision potential reveals phase transitions of the edge even when they are not manifested in the bulk, thus opening a variety of possibilities for investigating, manipulating, and characterizing topological quantum matter solely in terms of equilibrium boundary physics.
Topological Insulators: A New Platform for Fundamental Science and Applications
NASA Astrophysics Data System (ADS)
Bansil, Arun
2013-03-01
Topological insulators constitute a new phase of quantum matter whose recent discovery has focused world-wide attention on wide-ranging phenomena in materials driven by spin-orbit coupling effects well beyond their traditional role in determining magnetic properties. I will discuss how by exploiting electronic structure techniques we have been able to predict and understand the characteristics of many new classes of binary, ternary and quaternary topologically interesting systems. The flexibility of chemical, structural and magnetic parameters so obtained is the key ingredient for exploring fundamental science questions, including novel spin-textures and exotic superconducting states, as well as for the realization of multi-functional topological devices for thermoelectric, spintronics, information processing and other applications. I will also highlight new insights that have been enabled through our material-specific modeling of angle-resolved photoemission (ARPES) and scanning tunneling (STS) spectroscopies of topological surface states, including effects of the photoemission and tunneling matrix element, which is well-known to be important for a robust interpretation of various highly resolved spectroscopies. Work supported by the Materials Science & Engineering Division, Basic Energy Sciences, U. S. D. O. E.
Thermodynamic signatures of edge states in Topological Insulators
NASA Astrophysics Data System (ADS)
Quelle, Anton; Cobanera, Emilio; Morais Smith, Cristinae
Topological insulators are states of matter distinguished by the presence of symmetry protected metallic boundary modes. These edge modes have been characterised in terms of transport and spectroscopic measurements, but a thermodynamic description has been lacking. The challenge arises because in conventional thermodynamics the potentials are required to scale linearly with extensive variables like volume, which does not allow for a general treatment of boundary effects. In this paper, we overcome this challenge with Hill thermodynamics. In this extension of the thermodynamic formalism, the grand potential is split into an extensive, conventional contribution, and the subdivision potential, which is the central construct of Hill's theory. For topologically non-trivial electronic matter, the subdivision potential captures measurable contributions to the density of states and the heat capacity: it is the thermodynamic manifestation of the topological edge structure. Furthermore, the subdivision potential reveals phase transitions of the edge even when they are not manifested in the bulk, thus opening a variety of new possibilities for investigating, manipulating, and characterizing topological quantum matter solely in terms of equilibrium boundary physics.
Ramsubhag, Ron R; Massaro, Chelsea L; Dadich, Christina M; Janeczek, Andrew J; Hoang, Tung T; Mazzio, Elizabeth A; Eyunni, Suresh; Soliman, Karam F A; Dudley, Gregory B
2016-08-16
3,3-Dimethylcyclopentanes (neopentylenes) are ubiquitous in Nature but largely absent from synthetic pharmaceutical libraries. Neopentylenes define a hydrophobic and rigid 3-D topology with distinct molecular pharmacology, as exemplified here with two neopentylene-fused analogues of the synthetic anti-inflammatory drug, ibuprofen. PMID:27492587
Magnetic proximity effect in a topological insulator-magnetic insulator heterostructure
NASA Astrophysics Data System (ADS)
Yang, Wenmin; Yang, Shuo; Wu, Kehui; Cai, Jianwang; Li, Yongqing
Ferromagnetic topological insulators (TIs) have become one of the most actively pursued materials in condensed matter physics due to their unique properties, where several exotic phenomena have been predicted and observed, such as the quantum anomalous Hall effect and the topological magneto-electric effect. In this talk, I will introduce the fabrication and characterization of a heterostructure consisting of a thin film of the topological insulator Bi2Se3 and the magnetic insulator Y3Fe5O12 (YIG), and study the low temperature transport properties. Compared to non-magnetic Bi2Se3, the magnetoresistance (MR) of Bi2Se3-YIG deviates from the typical weak antilocalization behavior in low perpendicular magnetic fields. In parallel fields, we observe unusual negative MR and sharp MR jumps when single domains nucleate and annihilate. Furthermore, magnetization measurements reveal that this unusual MR correlates to domain wall configurations of the YIG layer. These results can be explained due to the appearance of a perpendicular magnetic exchange field at the interface. The understanding of the interfacial interaction is valuable to further reveal unique physics in TI based magnetic heterostructures.
Z2 Invariants of Topological Insulators as Geometric Obstructions
NASA Astrophysics Data System (ADS)
Fiorenza, Domenico; Monaco, Domenico; Panati, Gianluca
2016-05-01
We consider a gapped periodic quantum system with time-reversal symmetry of fermionic (or odd) type, i.e. the time-reversal operator squares to -1. We investigate the existence of periodic and time-reversal invariant Bloch frames in dimensions 2 and 3. In 2 d, the obstruction to the existence of such a frame is shown to be encoded in a Z_2-valued topological invariant, which can be computed by a simple algorithm. We prove that the latter agrees with the Fu-Kane index. In 3 d, instead, four Z_2 invariants emerge from the construction, again related to the Fu-Kane-Mele indices. When no topological obstruction is present, we provide a constructive algorithm yielding explicitly a periodic and time-reversal invariant Bloch frame. The result is formulated in an abstract setting, so that it applies both to discrete models and to continuous ones.
Two-dimensional topological insulator state and topological phase transition in bilayer graphene.
Qiao, Zhenhua; Tse, Wang-Kong; Jiang, Hua; Yao, Yugui; Niu, Qian
2011-12-16
We show that gated bilayer graphene hosts a strong topological insulator (TI) phase in the presence of Rashba spin-orbit (SO) coupling. We find that gated bilayer graphene under preserved time-reversal symmetry is a quantum valley Hall insulator for small Rashba SO coupling λ(R), and transitions to a strong TI when λ(R)>√[U(2)+t(⊥)(2)], where U and t(⊥) are, respectively, the interlayer potential and tunneling energy. Different from a conventional quantum spin Hall state, the edge modes of our strong TI phase exhibit both spin and valley filtering, and thus share the properties of both quantum spin Hall and quantum valley Hall insulators. The strong TI phase remains robust in the presence of weak graphene intrinsic SO coupling.
Transport studies of mesoscopic and magnetic topological insulators
NASA Astrophysics Data System (ADS)
Kandala, Abhinav
Topological Insulators (TI) are a novel class of materials that are ideally insulating in the bulk, but have gapless, metallic states at the surface. These surface states have very exciting properties such as suppressed backscattering and spin-momentum locking, which are of great interest for research efforts towards dissipation-less electronics and spintronics. The popular thermo-electrics from the Bi chalcogenide family -- Bi2Se3 and Bi 2Te3 -- have been experimentally demonstrated to be promising candidate TI materials, and form the chosen material system for this dissertation research. The first part of this dissertation research focuses on low temperature magneto-transport measurements of mesoscopic topological insulator devices (Chapter 3). The top-down patterning of epitaxial thin films of Bi2Se 3 and Bi2Te3 (that are plagued with bulk conduction) is motivated, in part, by an effort to enhance the surface-to-volume ratio in mesoscopic channels. At cryogenic temperatures, transport measurements of these devices reveal periodic conductance fluctuations in straight channel devices, despite the lack of any explicit patterning of the TI film into a ring or a loop. A careful analysis of the surface morphology and comparison with the transport data then demonstrate that scattering off the edges of triangular plateaus at the surface leads to the creation of Aharonov-Bohm electronic orbits responsible for the periodicity. Another major focus of this dissertation work is on combining topological insulators with magnetism. This has been shown to open a gap in the surface states leading to possibilities of magnetic "gating" and the realization of dissipation-less transport at zero-field, amongst several other exotic quantum phenomena. In this dissertation, I present two different schemes for probing these effects in electrical transport devices -- interfacing with insulating ferromagnets (Chapter 4) and bulk magnetic doping (Chapter 5). In Chapter 4, I shall present the
The 3-D topology of magnetic fields in and around sunspots
NASA Astrophysics Data System (ADS)
Beck, Christian
2006-02-01
a much larger variability of the Bright Point properties than expected, which puts their elementary nature in some doubt. In the conclusions of this work, the resulting 3-D topology of the sunspot is used in an attempt to develop a consistent picture of the development and the fine structure of sunspots.
Visualization of superparamagnetic dynamics in magnetic topological insulators
NASA Astrophysics Data System (ADS)
Lachman, E.; Young, A. F.; Richardella, A.; Cuppens, J.; Hr, N.; Anahory, Y.; Meltzer, A. Y.; Kandala, A.; Kempinger, S.; Myasoedov, Y.; Huber, M. E.; Samarth, N.; Zeldov, E.
Magnetically doped topological insulators have recently been shown to host a quantum anomalous Hall (QAH) state at low temperatures. Using scanning nanoSQUID magnetic imaging on a Cr-doped (Bi , Sb) 2 Te3 thin film[1], we reveal that the magnetic structure of magnetically doped topological insulators is not ferromagnetic as assumed so far. In fact it is superparamagnetic, formed by weakly interacting magnetic domains. These domains have a characteristic size of a few tens of nanometers, and undergo random reversals which drive the electronic state from one Hall plateau to the other. The superparamagnetic state is metastable, with small energy barriers to relaxation. We observe magnetic relaxation even at 300 mK, evident also in transport measurements. Unexpectedly, magnetic relaxation can also be induced by varying the gate voltage, and we propose a mechanism for the influence of the electronic phase on the magnetic relaxation. We speculate that the dynamic nature of magnetic disorder in QAH systems may contribute to the observed fragility of the QAH state at elevated temperatures.
Structure and transport of topological insulators on epitaxial graphene
NASA Astrophysics Data System (ADS)
Kally, James; Reifsnyder Hickey, Danielle; Lin, Yu-Chuan; Richardella, Anthony; Lee, Joon Sue; Robinson, Joshua; Mkhoyan, K. Andre; Samarth, Nitin
Recent advancements in spintronics have shown that a class of materials, topological insulators (TI), can be used as a spin-current generator or detector. Topological insulators have protected surface states with the electron's spin locked to its momentum. To access these surface states, (Bi, Sb)2Te3 can be grown by molecular beam epitaxy to have the Fermi energy near the Dirac point so that transport occurs only through the spin-dependent surface states. Graphene is another 2D material of great interest for spintronics because of its very long spin diffusion length. This is an ideal material to act as a spin channel in devices. The van der Waals nature of the growth exhibited by 2D materials such as (Bi, Sb)2Te3 and graphene allows heterostructures to be formed despite the large lattice mismatch. We explore the structure and transport of (Bi, Sb)2Te3 grown on epitaxial graphene on 6H-SiC substrates for spintronic applications. This work was supported in part by C-SPIN and LEAST, two of the six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.
Quantum tunneling between Chern states in a Topological Insulator
NASA Astrophysics Data System (ADS)
Liu, Minhao; Wang, Wudi; Richardella, Anthony R.; Kandala, Abhinav; Li, Jian; Yazdani, Ali; Samarth, Nitin; Ong, N. P.
The tunneling of a macroscopic object through a barrier is a quintessentially quantum phenomenon important in field theory, low-temperature physics and quantum computing. Progress has been achieved in experiments on Josephson junctions, molecular magnets, and domain wall dynamics. However, a key feature - rapid expansion of the true vacuum triggered by a tunneling event is virtually unexplored. Here we report the detection of large jumps in the Hall resistance Ryx in a magnetized topological insulator which result from tunneling out of a metastable topological state. In the TI, the conducting electrons are confined to surface Dirac states. When magnetized, the TI enters the quantum anomalous Hall insulator state in which Ryx is strictly quantized. If the magnetic field is reversed, the sample is trapped in a metastable state. We find that, below 145 mK, Ryx exhibits abrupt jumps as large as one quantum unit on time-scales under 1 ms. If the temperature is raised, the escape rate is suppressed consistent with tunneling in the presence of dissipation. The jumps involve expansion of the thermodynamically stable state bubble over macroscopic lengths, but dissipation limits the final size. The results uncover novel effects of dissipation on macroscopic tunneling. We acknowledge support from DARPA SPAWAR (N66001-11-1-4110) and the Gordon and Betty Moore Foundations (GBMF4539).
Superparamagnetism-induced mesoscopic electron focusing in topological insulators
NASA Astrophysics Data System (ADS)
Sessi, P.; Rüßmann, P.; Bathon, T.; Barla, A.; Kokh, K. A.; Tereshchenko, O. E.; Fauth, K.; Mahatha, S. K.; Valbuena, M. A.; Godey, S.; Glott, F.; Mugarza, A.; Gargiani, P.; Valvidares, M.; Long, N. H.; Carbone, C.; Mavropoulos, P.; Blügel, S.; Bode, M.
2016-08-01
Recently it has been shown that surface magnetic doping of topological insulators induces backscattering of Dirac states which are usually protected by time-reversal symmetry [Sessi et al., Nat. Commun. 5, 5349 (2014), 10.1038/ncomms6349]. Here we report on quasiparticle interference measurements where, by improved Fermi level tuning, strongly focused interference patterns on surface Mn-doped Bi2Te3 could be directly observed by means of scanning tunneling microscopy at 4 K. Ab initio and model calculations reveal that their mesoscopic coherence relies on two prerequisites: (i) a hexagonal Fermi surface with large parallel segments (nesting) and (ii) magnetic dopants which couple to a high-spin state. Indeed, x-ray magnetic circular dichroism shows superparamagnetism even at very dilute Mn concentrations. Our findings provide evidence of strongly anisotropic Dirac-fermion-mediated interactions and demonstrate how spin information can be transmitted over long distances, allowing the design of experiments and devices based on coherent quantum effects in topological insulators.
NASA Astrophysics Data System (ADS)
Ye, Peng; Hughes, Taylor L.; Maciejko, Joseph; Fradkin, Eduardo
2016-09-01
Topological phases of matter are usually realized in deconfined phases of gauge theories. In this context, confined phases with strongly fluctuating gauge fields seem to be irrelevant to the physics of topological phases. For example, the low-energy theory of the two-dimensional (2D) toric code model (i.e., the deconfined phase of Z2 gauge theory) is a U(1 )×U(1 ) Chern-Simons theory in which gauge charges (i.e., e and m particles) are deconfined and the gauge fields are gapped, while the confined phase is topologically trivial. In this paper, we point out a route to constructing exotic three-dimensional (3D) gapped fermionic phases in a confining phase of a gauge theory. Starting from a parton construction with strongly fluctuating compact U(1 )×U(1 ) gauge fields, we construct gapped phases of interacting fermions by condensing two linearly independent bosonic composite particles consisting of partons and U(1 )×U(1 ) magnetic monopoles. This can be regarded as a 3D generalization of the 2D Bais-Slingerland condensation mechanism. Charge fractionalization results from a Debye-Hückel-type screening cloud formed by the condensed composite particles. Within our general framework, we explore two aspects of symmetry-enriched 3D Abelian topological phases. First, we construct a new fermionic state of matter with time-reversal symmetry and Θ ≠π , the fractional topological insulator. Second, we generalize the notion of anyonic symmetry of 2D Abelian topological phases to the charge-loop excitation symmetry (Charles ) of 3D Abelian topological phases. We show that line twist defects, which realize Charles transformations, exhibit non-Abelian fusion properties.
Transport Experiments of Topological Insulators and Dirac Semimetals
NASA Astrophysics Data System (ADS)
Xiong, Jun
The progress in understanding the Berry phase of Bloch electrons in crystals has triggered tremendous interest in discovering novel topological phases of solids. The integration of the Berry curvature in the Brillouin zone can categorize solids into phases such as topological insulators (TI), Dirac semimetals (DSM) and Weyl semimetals (WSM). These new phases have unconventional electronic states at the boundaries, such as the spin polarized electrons on the surface of a three-dimensional TI. Under proper engineering, such edge states can carry a dissipationless current, leading to a great application potential in low-power devices and topological quantum computers. Besides TI, the newly discovered Dirac and Weyl semimetals represent another example in which electrons have a linear energy-momentum dispersion. The paired Weyl nodes have opposite chiralities, and can be regarded as positive and negative monopoles of the Berry flux. Under the time-reversal, inversion and certain crystal symmetries, as in the cases of Cd3As2 and Na3Bi, the Weyl nodes with different chiralities can coexist at the same point in the Brillouin zone and the crystal becomes a Dirac semimetal. Such semimetals provide platforms for some phenomena in high energy physics, such as the chiral anomaly effect. The above predictions lie at the heart of our experimental study of topological materials. We synthesized a topological insulator, Bi2Te2 Se, with a suppressed bulk carrier density. Analysis of the prominent Shubnikov-de Haas oscillations in Bi2Te2Se demonstrates clear evidence for the Dirac surface electrons and their pi Berry phase. We also leveraged the ionic liquid gating technique to bring the chemical potential 50% closer to the Dirac point. Additionally, we studied two types of Na3Bi, a DSM. The first type with a high chemical potential exhibits a large and linear magnetoresistance (MR), implying a transport lifetime steeply tuned by the magnetic field. In the second type of Na3Bi with a
Tunable multifunctional topological insulators in ternary Heusler compounds.
Chadov, Stanislav; Qi, Xiaoliang; Kübler, Jürgen; Fecher, Gerhard H; Felser, Claudia; Zhang, Shou Cheng
2010-07-01
Recently the quantum spin Hall effect was theoretically predicted and experimentally realized in quantum wells based on the binary semiconductor HgTe (refs 1-3). The quantum spin Hall state and topological insulators are new states of quantum matter interesting for both fundamental condensed-matter physics and material science. Many Heusler compounds with C1(b) structure are ternary semiconductors that are structurally and electronically related to the binary semiconductors. The diversity of Heusler materials opens wide possibilities for tuning the bandgap and setting the desired band inversion by choosing compounds with appropriate hybridization strength (by the lattice parameter) and magnitude of spin-orbit coupling (by the atomic charge). Based on first-principle calculations we demonstrate that around 50 Heusler compounds show band inversion similar to that of HgTe. The topological state in these zero-gap semiconductors can be created by applying strain or by designing an appropriate quantum-well structure, similar to the case of HgTe. Many of these ternary zero-gap semiconductors (LnAuPb, LnPdBi, LnPtSb and LnPtBi) contain the rare-earth element Ln, which can realize additional properties ranging from superconductivity (for example LaPtBi; ref. 12) to magnetism (for example GdPtBi; ref. 13) and heavy fermion behaviour (for example YbPtBi; ref. 14). These properties can open new research directions in realizing the quantized anomalous Hall effect and topological superconductors.
Breaking time reversal symmetry in a circuit topological insulator
NASA Astrophysics Data System (ADS)
Owens, Clai; Jia, Ningyuan; Sommer, Ariel; Schuster, David; Simon, Jonathan
2014-05-01
Materials exhibiting knotted band-structures provide a unique window on interplay between topology and quantum mechanics under well-controlled conditions. The main difficulty is engineering a strong background gauge field for the electrically neutral ``particles'' that comprise such materials. In cold atom systems, the leading candidates include Raman couplings, lattice modulation, and optical flux lattices; however no scalable approach has yet been demonstrated. Meta-materials have seen substantial success, both in coupled optical waveguides, and circuit networks. Here we describe progress towards time reversal breaking in a circuit, to split up- and down- spin Chern bands. This work is essential for studies of fractional quantum hall physics, where spin-flip collisions effectively reverse the magnetic field and destroy the many-body state. We present the design of a 1D transmission line that breaks time reversal symmetry via periodic capacitance modulation. We extend this approach to a 2D geometry, realizing a Floquet topological insulator with an isolated ground Chern-band. These tools are compatible with circuit quantum electrodynamics techniques, and thus provide an exciting route to studies of topologically ordered phases of matter.
Stable topological insulators achieved using high energy electron beams
Zhao, Lukas; Konczykowski, Marcin; Deng, Haiming; Korzhovska, Inna; Begliarbekov, Milan; Chen, Zhiyi; Papalazarou, Evangelos; Marsi, Marino; Perfetti, Luca; Hruban, Andrzej; Wołoś, Agnieszka; Krusin-Elbaum, Lia
2016-01-01
Topological insulators are potentially transformative quantum solids with metallic surface states which have Dirac band structure and are immune to disorder. Ubiquitous charged bulk defects, however, pull the Fermi energy into the bulk bands, denying access to surface charge transport. Here we demonstrate that irradiation with swift (∼2.5 MeV energy) electron beams allows to compensate these defects, bring the Fermi level back into the bulk gap and reach the charge neutrality point (CNP). Controlling the beam fluence, we tune bulk conductivity from p- (hole-like) to n-type (electron-like), crossing the Dirac point and back, while preserving the Dirac energy dispersion. The CNP conductance has a two-dimensional character on the order of ten conductance quanta and reveals, both in Bi2Te3 and Bi2Se3, the presence of only two quantum channels corresponding to two topological surfaces. The intrinsic quantum transport of the topological states is accessible disregarding the bulk size. PMID:26961901
Stacked topological insulator built from bismuth-based graphene sheet analogues.
Rasche, Bertold; Isaeva, Anna; Ruck, Michael; Borisenko, Sergey; Zabolotnyy, Volodymyr; Büchner, Bernd; Koepernik, Klaus; Ortix, Carmine; Richter, Manuel; van den Brink, Jeroen
2013-05-01
Commonly, materials are classified as either electrical conductors or insulators. The theoretical discovery of topological insulators has fundamentally challenged this dichotomy. In a topological insulator, the spin-orbit interaction generates a non-trivial topology of the electronic band structure dictating that its bulk is perfectly insulating, whereas its surface is fully conducting. The first topological insulator candidate material put forward--graphene--is of limited practical use because its weak spin-orbit interactions produce a bandgap of ~0.01 K. Recent reexaminations of Bi2Se3 and Bi2Te3, however, have firmly categorized these materials as strong three-dimensional topological insulators. We have synthesized the first bulk material belonging to an entirely different, weak, topological class, built from stacks of two-dimensional topological insulators: Bi14Rh3I9. Its Bi-Rh sheets are graphene analogues, but with a honeycomb net composed of RhBi8 cubes rather than carbon atoms. The strong bismuth-related spin-orbit interaction renders each graphene-like layer a topological insulator with a 2,400 K bandgap.
Interaction-enabled topological phases in topological insulator-superconductor heterostructures
NASA Astrophysics Data System (ADS)
Pikulin, D. I.; Chiu, Ching-Kai; Zhu, Xiaoyu; Franz, M.
2015-08-01
Topological phases of matter that depend for their existence on interactions are fundamentally interesting and potentially useful as platforms for future quantum computers. Despite the multitude of theoretical proposals, the only interaction-enabled topological phase experimentally observed is the fractional quantum Hall liquid. To help identify other systems that can give rise to such phases, we present in this work a detailed study of the effect of interactions on Majorana zero modes bound to vortices in a superconducting surface of a three-dimensional topological insulator. This system is of interest because, as was recently pointed out, it can be tuned into the regime of strong interactions. We start with a zero-dimensional system suggesting an experimental realization of the interaction-induced Z8 ground-state periodicity previously discussed by Fidkowski and Kitaev [Phys. Rev. B 81, 134509 (2010), 10.1103/PhysRevB.81.134509; Phys. Rev. B 83, 075103 (2011), 10.1103/PhysRevB.83.075103] . We argue that the periodicity is experimentally observable using a tunnel probe. We then focus on interaction-enabled crystalline topological phases that can be built with the Majoranas in a vortex lattice in higher dimensions. In one dimension, we identify an interesting exactly solvable model which is related to a previously discussed one that exhibits an interaction-enabled topological phase. We study these models using analytical techniques, exact numerical diagonalization, and density matrix renormalization group. Our results confirm the existence of the interaction-enabled topological phase and clarify the nature of the quantum phase transition that leads to it. We finish with a discussion of models in dimensions 2 and 3 that produce similar interaction-enabled topological phases.
Classification of topological insulators and superconductors in the presence of reflection symmetry
NASA Astrophysics Data System (ADS)
Chiu, Ching-Kai; Yao, Hong; Ryu, Shinsei
2013-08-01
We discuss a topological classification of insulators and superconductors in the presence of both (nonspatial) discrete symmetries in the Altland-Zirnbauer classification and spatial reflection symmetry in any spatial dimensions. By using the structure of bulk Dirac Hamiltonians of minimal matrix dimensions and explicit constructions of topological invariants, we provide the complete classification, which still has the same dimensional periodicities with the original Altland-Zirnbauer classification. The classification of reflection-symmetry-protected topological insulators and superconductors depends crucially on the way reflection symmetry operation is realized. When a boundary is introduced, which is reflected into itself, these nontrivial topological insulators and superconductors support gapless modes localized at the boundary.
Liu, Minhao; Zhang, Jinsong; Chang, Cui-Zu; Zhang, Zuocheng; Feng, Xiao; Li, Kang; He, Ke; Wang, Li-li; Chen, Xi; Dai, Xi; Fang, Zhong; Xue, Qi-Kun; Ma, Xucun; Wang, Yayu
2012-01-20
We report transport studies on magnetically doped Bi(2)Se(3) topological insulator ultrathin films grown by molecular beam epitaxy. The magnetotransport behavior exhibits a systematic crossover between weak antilocalization and weak localization with the change of magnetic impurity concentration, temperature, and magnetic field. We show that the localization property is closely related to the magnetization of the sample, and the complex crossover is due to the transformation of Bi(2)Se(3) from a topological insulator to a topologically trivial dilute magnetic semiconductor driven by magnetic impurities. This work demonstrates an effective way to manipulate the quantum transport properties of the topological insulators by breaking time-reversal symmetry.
Two-Dimensional Dirac Materials: From Graphene to Topological Insulators
NASA Astrophysics Data System (ADS)
Teweldebrhan, Desalegne Bekuretsion
2011-12-01
Silicon has been reaching physical limits as the semiconductor industry moves to smaller device feature sizes, increased integration densities and faster operation speeds. There is a strong need to engineer alternative materials, which can become foundation of new computational paradigms or lead to other applications such as efficient solid-state energy conversion. Recently discovered Dirac materials, which are characterized by the liner electron dispersion, are examples of such alternative materials. In this dissertation, I investigate two representatives of Dirac materials -- graphene and topological insulators. Specifically, I focus on the (i) effects of electron beam irradiation on graphene properties and (ii) electronic and thermal characteristics of exfoliated films of Bi2Te3-family of topological insulators. I carried out Raman investigation of changes in graphene crystal lattice induced by the low and medium energy electron-beam irradiation (5.20 keV). It was found that radiation exposures result in appearance of the disorder D band around 1345 cm-1. The dependence of the ratio of the intensities of D and G peaks, I(D)/I(G), on the irradiation dose is non-monotonic suggesting graphene.s transformation to polycrystalline and then to disordered state. By controlling the irradiation dose one can change the carrier mobility and increase the resistance at the minimum conduction point. The obtained results may lead to new methods of defect engineering of graphene properties. They also have important implications for fabrication of graphene nanodevices, which involve electron beams. Bismuth telluride and related compounds are the best thermoelectric materials known today. Recently, it was determined that they reveal the topological insulator properties. We succeeded in the first "graphene-like" exfoliation of large-area crystalline films and ribbons of Bi2Te3 with the thickness going down to a single quintuple. The presence of van der Waals gaps allowed us to
70-fs mode-locked erbium-doped fiber laser with topological insulator.
Liu, Wenjun; Pang, Lihui; Han, Hainian; Tian, Wenlong; Chen, Hao; Lei, Ming; Yan, Peiguang; Wei, Zhiyi
2016-01-01
Femtosecond optical pulses have applications in optical communication, astronomical frequency combs, and laser spectroscopy. Here, a hybrid mode-locked erbium-doped fiber (EDF) laser with topological insulator (TI) is proposed, for the first time to our best knowledge. The pulsed laser deposition (PLD) method is employed to fabricate the fiber-taper TI saturable absorber (TISA). By virtue of the fiber-taper TISA, the hybrid EDF laser is passively mode-locked using the nonlinear polarization evolution (NPE), and emits 70 fs pulses at 1542 nm, whose 3 dB spectral width is 63 nm with a repetition rate and transfer efficiency of 95.4 MHz and 14.12%, respectively. Our experiments indicate that the proposed hybrid mode-locked EDF lasers have better performance to achieve shorter pulses with higher power and lower mode-locking threshold in the future. PMID:26813439
70-fs mode-locked erbium-doped fiber laser with topological insulator
Liu, Wenjun; Pang, Lihui; Han, Hainian; Tian, Wenlong; Chen, Hao; Lei, Ming; Yan, Peiguang; Wei, Zhiyi
2016-01-01
Femtosecond optical pulses have applications in optical communication, astronomical frequency combs, and laser spectroscopy. Here, a hybrid mode-locked erbium-doped fiber (EDF) laser with topological insulator (TI) is proposed, for the first time to our best knowledge. The pulsed laser deposition (PLD) method is employed to fabricate the fiber-taper TI saturable absorber (TISA). By virtue of the fiber-taper TISA, the hybrid EDF laser is passively mode-locked using the nonlinear polarization evolution (NPE), and emits 70 fs pulses at 1542 nm, whose 3 dB spectral width is 63 nm with a repetition rate and transfer efficiency of 95.4 MHz and 14.12%, respectively. Our experiments indicate that the proposed hybrid mode-locked EDF lasers have better performance to achieve shorter pulses with higher power and lower mode-locking threshold in the future. PMID:26813439
Optically tunable spin transport on the surface of a topological insulator
NASA Astrophysics Data System (ADS)
Yudin, D.; Kibis, O. V.; Shelykh, I. A.
2016-10-01
The emerging field of spinoptronics has a potential to supersede the functionality of modern electronics, while a proper description of strong light–matter coupling pose the most intriguing questions from both fundamental scientific and technological perspectives. In this paper we address a highly relevant issue for such a development. We theoretically explore spin dynamics on the surface of a 3D topological insulator (TI) irradiated with an off-resonant high-frequency electromagnetic wave. The strong coupling between electrons and the electromagnetic wave drastically modifies the spin properties of TI. The effects of irradiation are shown to result in anisotropy of electron energy spectrum near the Dirac point and suppression of spin current and are investigated in detail in this work.
70-fs mode-locked erbium-doped fiber laser with topological insulator.
Liu, Wenjun; Pang, Lihui; Han, Hainian; Tian, Wenlong; Chen, Hao; Lei, Ming; Yan, Peiguang; Wei, Zhiyi
2016-01-27
Femtosecond optical pulses have applications in optical communication, astronomical frequency combs, and laser spectroscopy. Here, a hybrid mode-locked erbium-doped fiber (EDF) laser with topological insulator (TI) is proposed, for the first time to our best knowledge. The pulsed laser deposition (PLD) method is employed to fabricate the fiber-taper TI saturable absorber (TISA). By virtue of the fiber-taper TISA, the hybrid EDF laser is passively mode-locked using the nonlinear polarization evolution (NPE), and emits 70 fs pulses at 1542 nm, whose 3 dB spectral width is 63 nm with a repetition rate and transfer efficiency of 95.4 MHz and 14.12%, respectively. Our experiments indicate that the proposed hybrid mode-locked EDF lasers have better performance to achieve shorter pulses with higher power and lower mode-locking threshold in the future.
Two-Dimensional Dirac Fermions in a Topological Insulator: Transport in the Quantum Limit
Analytis, J.G.; McDonald, R.D.; Riggs, S.C.; Chu, J.-H.; Boebinger, G.S.; Fisher, I.R.; /SIMES, Stanford /SLAC /Stanford U., Geballe Lab /Stanford U., Appl. Phys. Dept.
2011-08-12
Pulsed magnetic fields of up to 55T are used to investigate the transport properties of the topological insulator Bi{sub 2}Se{sub 3} in the extreme quantum limit. For samples with a bulk carrier density of n = 2.9 x 10{sup 16} cm{sup -3}, the lowest Landau level of the bulk 3D Fermi surface is reached by a field of 4T. For fields well beyond this limit, Shubnikov-de Haas oscillations arising from quantization of the 2D surface state are observed, with the {nu} = 1 Landau level attained by a field of {approx} 35T. These measurements reveal the presence of additional oscillations which occur at fields corresponding to simple rational fractions of the integer Landau indices.
NASA Astrophysics Data System (ADS)
Roy, Sthitadhi; Roychowdhury, Krishanu; Das, Sourin
2016-07-01
We show that the surface states of pristine 3D topological insulators (TIs) are analogs of ferromagnetic half metals due to complete polarization of an emergent momentum independent pseudospin (SU(2)) degree of freedom on the surface. To put this claim on firm footing, we present results for TI surfaces perpendicular to the crystal growth axis, which clearly show that the tunneling conductance between two such TI surfaces of the same TI material is dominated by this half metallic behavior leading to physics reminiscent of a spin-valve. Further using the generalized tunnel magnetoresistance derived in this work we also study the tunneling current between arbitrary TI surfaces. We also perform a comprehensive study of the effect of all possible surface potentials allowed by time reversal symmetry on this spin-valve effect and show that it is robust against most of such potentials.
A high-temperature ferromagnetic topological insulating phase by proximity coupling.
Katmis, Ferhat; Lauter, Valeria; Nogueira, Flavio S; Assaf, Badih A; Jamer, Michelle E; Wei, Peng; Satpati, Biswarup; Freeland, John W; Eremin, Ilya; Heiman, Don; Jarillo-Herrero, Pablo; Moodera, Jagadeesh S
2016-05-26
Topological insulators are insulating materials that display conducting surface states protected by time-reversal symmetry, wherein electron spins are locked to their momentum. This unique property opens up new opportunities for creating next-generation electronic, spintronic and quantum computation devices. Introducing ferromagnetic order into a topological insulator system without compromising its distinctive quantum coherent features could lead to the realization of several predicted physical phenomena. In particular, achieving robust long-range magnetic order at the surface of the topological insulator at specific locations without introducing spin-scattering centres could open up new possibilities for devices. Here we use spin-polarized neutron reflectivity experiments to demonstrate topologically enhanced interface magnetism by coupling a ferromagnetic insulator (EuS) to a topological insulator (Bi2Se3) in a bilayer system. This interfacial ferromagnetism persists up to room temperature, even though the ferromagnetic insulator is known to order ferromagnetically only at low temperatures (<17 K). The magnetism induced at the interface resulting from the large spin-orbit interaction and the spin-momentum locking of the topological insulator surface greatly enhances the magnetic ordering (Curie) temperature of this bilayer system. The ferromagnetism extends ~2 nm into the Bi2Se3 from the interface. Owing to the short-range nature of the ferromagnetic exchange interaction, the time-reversal symmetry is broken only near the surface of a topological insulator, while leaving its bulk states unaffected. The topological magneto-electric response originating in such an engineered topological insulator could allow efficient manipulation of the magnetization dynamics by an electric field, providing an energy-efficient topological control mechanism for future spin-based technologies. PMID:27225124
A high-temperature ferromagnetic topological insulating phase by proximity coupling.
Katmis, Ferhat; Lauter, Valeria; Nogueira, Flavio S; Assaf, Badih A; Jamer, Michelle E; Wei, Peng; Satpati, Biswarup; Freeland, John W; Eremin, Ilya; Heiman, Don; Jarillo-Herrero, Pablo; Moodera, Jagadeesh S
2016-05-09
Topological insulators are insulating materials that display conducting surface states protected by time-reversal symmetry, wherein electron spins are locked to their momentum. This unique property opens up new opportunities for creating next-generation electronic, spintronic and quantum computation devices. Introducing ferromagnetic order into a topological insulator system without compromising its distinctive quantum coherent features could lead to the realization of several predicted physical phenomena. In particular, achieving robust long-range magnetic order at the surface of the topological insulator at specific locations without introducing spin-scattering centres could open up new possibilities for devices. Here we use spin-polarized neutron reflectivity experiments to demonstrate topologically enhanced interface magnetism by coupling a ferromagnetic insulator (EuS) to a topological insulator (Bi2Se3) in a bilayer system. This interfacial ferromagnetism persists up to room temperature, even though the ferromagnetic insulator is known to order ferromagnetically only at low temperatures (<17 K). The magnetism induced at the interface resulting from the large spin-orbit interaction and the spin-momentum locking of the topological insulator surface greatly enhances the magnetic ordering (Curie) temperature of this bilayer system. The ferromagnetism extends ~2 nm into the Bi2Se3 from the interface. Owing to the short-range nature of the ferromagnetic exchange interaction, the time-reversal symmetry is broken only near the surface of a topological insulator, while leaving its bulk states unaffected. The topological magneto-electric response originating in such an engineered topological insulator could allow efficient manipulation of the magnetization dynamics by an electric field, providing an energy-efficient topological control mechanism for future spin-based technologies.
A high-temperature ferromagnetic topological insulating phase by proximity coupling
NASA Astrophysics Data System (ADS)
Katmis, Ferhat; Lauter, Valeria; Nogueira, Flavio S.; Assaf, Badih A.; Jamer, Michelle E.; Wei, Peng; Satpati, Biswarup; Freeland, John W.; Eremin, Ilya; Heiman, Don; Jarillo-Herrero, Pablo; Moodera, Jagadeesh S.
2016-05-01
Topological insulators are insulating materials that display conducting surface states protected by time-reversal symmetry, wherein electron spins are locked to their momentum. This unique property opens up new opportunities for creating next-generation electronic, spintronic and quantum computation devices. Introducing ferromagnetic order into a topological insulator system without compromising its distinctive quantum coherent features could lead to the realization of several predicted physical phenomena. In particular, achieving robust long-range magnetic order at the surface of the topological insulator at specific locations without introducing spin-scattering centres could open up new possibilities for devices. Here we use spin-polarized neutron reflectivity experiments to demonstrate topologically enhanced interface magnetism by coupling a ferromagnetic insulator (EuS) to a topological insulator (Bi2Se3) in a bilayer system. This interfacial ferromagnetism persists up to room temperature, even though the ferromagnetic insulator is known to order ferromagnetically only at low temperatures (<17 K). The magnetism induced at the interface resulting from the large spin-orbit interaction and the spin-momentum locking of the topological insulator surface greatly enhances the magnetic ordering (Curie) temperature of this bilayer system. The ferromagnetism extends ~2 nm into the Bi2Se3 from the interface. Owing to the short-range nature of the ferromagnetic exchange interaction, the time-reversal symmetry is broken only near the surface of a topological insulator, while leaving its bulk states unaffected. The topological magneto-electric response originating in such an engineered topological insulator could allow efficient manipulation of the magnetization dynamics by an electric field, providing an energy-efficient topological control mechanism for future spin-based technologies.
Observation of a topological 3D Dirac semimetal phase in high-mobility Cd3As2
NASA Astrophysics Data System (ADS)
Neupane, M.; Xu, S.-Y.; Sankar, R.; Alidoust, N.; Bian, G.; Liu, Chang; Belopolski, I.; Chang, T.-R.; Jeng, H.-T.; Lin, H.; Bansil, A.; Chou, Fangcheng; Hasan, M. Z.
2014-03-01
Experimental identification of three-dimensional (3D) Dirac semimetals in solid state systems is critical for realizing exotic topological phenomena and quantum transport. Using high-resolution angle-resolved photoemission spectroscopy, we performed systematic electronic structure studies on well-known compound Cd3As2. For the first time, we observe a highly linear bulk Dirac cone located at the Brillouin zone center projected onto the (001) surface, which is consistent with a 3D Dirac semimetal phase in Cd3As2. Remarkably, an unusually high Dirac Fermion velocity is seen in samples where the mobility far exceeds 20,000 cm2/V.s suggesting that Cd3As2 can be a promising candidate as a hypercone analog of graphene in many device-applications, which can also incorporate topological quantum phenomena in a large gap setting. This work is primarily supported by U.S. DOE and Princeton University.
Chiu, Ching-Kai; Ghaemi, Pouyan; Hughes, Taylor L
2012-12-01
It has been shown that doped topological insulators, up to a certain level of doping, still preserve some topological signatures of the insulating phase such as axionic electromagnetic response and the presence of a Majorana mode in the vortices of a superconducting phase. Multiple topological insulators such as HgTe, ScPtBi, and other ternary Heusler compounds have been identified and generically feature the presence of a topologically trivial band between the two topological bands. In this Letter we show that the presence of such a trivial band can stabilize the topological signature over a much wider range of doping. Specifically, we calculate the structure of vortex modes in the superconducting phase of doped topological insulators, a model that captures the features of HgTe and the ternary Heusler compounds. We show that, due to the hybridization with the trivial band, Majorana modes are preserved over a large, extended doping range for p doping. In addition to presenting a viable system where much less fine-tuning is required to observe the Majorana modes, our analysis opens a route to study other topological features of doped compounds that cannot be modeled using the simple Bi(2)Se(3) Dirac model.
NASA Astrophysics Data System (ADS)
Li, Mingda; Chang, Cui-Zu; Kirby, Brian. J.; Jamer, Michelle E.; Cui, Wenping; Wu, Lijun; Wei, Peng; Zhu, Yimei; Heiman, Don; Li, Ju; Moodera, Jagadeesh S.
2015-08-01
Magnetic exchange driven proximity effect at a magnetic-insulator-topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS /Sb2 -xVx Te3 hybrid heterostructure, where V doping is used to drive the TI (Sb2 Te3 ) magnetic. We observe an artificial antiferromagneticlike structure near the MI-TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magnetic ordering.
Electrical spin injection in 2D semiconductors and topological insulators
Golub, L. E.; Ivchenko, E. L.
2013-12-04
We have developed a theory of spin orientation by electric current in 2D semiconductors. It is shown that the spin depends on the relation between the energy and spin relaxation times and can vary by a factor of two for the limiting cases of fast and slow energy relaxation. For symmetrically-doped (110)-grown semiconductor quantum wells the effect of current-induced spin orientation is shown to exist due to random spatial variation of the Rashba spin-orbit splitting. We demonstrate that the spin depends strongly on the correlation length of this random spin-orbit field. We calculate the spin orientation degree in two-dimensional topological insulators. In high electric fields when the “streaming” regime is realized, the spin orientation degree weakly depends on the electric field and can reach values about 5%.
Lateral and Vertical Two-Dimensional Layered Topological Insulator Heterostructures.
Li, Yanbin; Zhang, Jinsong; Zheng, Guangyuan; Sun, Yongming; Hong, Seung Sae; Xiong, Feng; Wang, Shuang; Lee, Hye Ryoung; Cui, Yi
2015-11-24
The heterostructured configuration between two-dimensional (2D) semiconductor materials has enabled the engineering of the band gap and the design of novel devices. So far, the synthesis of single-component topological insulator (TI) 2D materials such as Bi2Se3, Bi2Te3, and Sb2Te3 has been achieved through vapor phase growth and molecular beam epitaxy; however, the spatial controlled fabrication of 2D lateral heterostructures in these systems has not been demonstrated yet. Here, we report an in situ two-step synthesis process to form TI lateral heterostructures. Scanning transmission electron microscopy and energy-dispersive X-ray mapping results show the successful spatial control of chemical composition in these as-prepared heterostructures. The edge-induced growth mechanism is revealed by the ex situ atomic force microscope measurements. Electrical transport studies demonstrate the existence of p-n junctions in Bi2Te3/Sb2Te3 heterostructures.
Giant tunneling anomalous Hall conductance in topological insulators
NASA Astrophysics Data System (ADS)
Matos-Abiague, Alex; Scharf, Benedikt; Han, Jong E.; Hankiewicz, Ewelina M.; Zutic, Igor
We theoretically investigate the tunneling transport across a magnetic barrier modulated by a top gate potential on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a finite tunneling anomalous Hall conductance (TAHC), transverse to the applied bias, develops. Depending on the strengths of the magnetization and gate potential, the system can exhibit a giant anomalous Hall angle, with the TAHC exceeding the longitudinal tunneling conductance. Moreover, we predict the existence of a negative differential TAHC even when the longitudinal differential conductance remains positive. This work was supported by U.S. ONR Grant No. N000141310754 (A.M.-A., B.S.), DFG Grant No. SCHA 1899/1-1 (B.S.), DFG Grant No. HA 5893/4-1 within SPP 1666 (E.M.H.), and U.S. DOE, Office of Science BES, under Award DE-SC0004890 (I.Z.).
Universal Conductance Fluctuation in Two-Dimensional Topological Insulators
Choe, Duk-Hyun; Chang, K. J.
2015-01-01
Despite considerable interest in two-dimensional (2D) topological insulators (TIs), a fundamental question still remains open how mesoscopic conductance fluctuations in 2D TIs are affected by spin-orbit interaction (SOI). Here, we investigate the effect of SOI on the universal conductance fluctuation (UCF) in disordered 2D TIs. Although 2D TI exhibits UCF like any metallic systems, the amplitude of these fluctuations is distinguished from that of conventional spin-orbit coupled 2D materials. Especially, in 2D systems with mirror symmetry, spin-flip scattering is forbidden even in the presence of strong intrinsic SOI, hence increasing the amplitude of the UCF by a factor of compared with extrinsic SOI that breaks mirror symmetry. We propose an easy way to experimentally observe the existence of such spin-flip scattering in 2D materials. Our findings provide a key to understanding the emergence of a new universal behavior in 2D TIs. PMID:26055574
Absorption of surface acoustic waves by topological insulator thin films
Li, L. L.; Xu, W.
2014-08-11
We present a theoretical study on the absorption of the surface acoustic waves (SAWs) by Dirac electrons in topological insulator (TI) thin films (TITFs). We find that due to momentum and energy conservation laws, the absorption of the SAWs in TITFs can only be achieved via intra-band electronic transitions. The strong absorption can be observed up to sub-terahertz frequencies. With increasing temperature, the absorption intensity increases significantly and the cut-off frequency is blue-shifted. More interestingly, we find that the absorption of the SAWs by the TITFs can be markedly enhanced by the tunable subgap in the Dirac energy spectrum of the TI surface states. Such a subgap is absent in conventional two-dimensional electron gases (2DEGs) and in the gapless Dirac 2DEG such as graphene. This study is pertinent to the exploration of the acoustic properties of TIs and to potential application of TIs as tunable SAW devices working at hypersonic frequencies.
Collective excitations on a surface of topological insulator
2012-01-01
We study collective excitations in a helical electron liquid on a surface of three-dimensional topological insulator. Electron in helical liquid obeys Dirac-like equation for massless particles and direction of its spin is strictly determined by its momentum. Due to this spin-momentum locking, collective excitations in the system manifest themselves as coupled charge- and spin-density waves. We develop quantum field-theoretical description of spin-plasmons in helical liquid and study their properties and internal structure. Value of spin polarization arising in the system with excited spin-plasmons is calculated. We also consider the scattering of spin-plasmons on magnetic and nonmagnetic impurities and external potentials, and show that the scattering occurs mainly into two side lobes. Analogies with Dirac electron gas in graphene are discussed. PACS: 73.20.Mf; 73.22.Lp; 75.25.Dk. PMID:22376744
Quantum corrections crossover and ferromagnetism in magnetic topological insulators.
Bao, Lihong; Wang, Weiyi; Meyer, Nicholas; Liu, Yanwen; Zhang, Cheng; Wang, Kai; Ai, Ping; Xiu, Faxian
2013-01-01
Revelation of emerging exotic states of topological insulators (TIs) for future quantum computing applications relies on breaking time-reversal symmetry and opening a surface energy gap. Here, we report on the transport response of Bi2Te3 TI thin films in the presence of varying Cr dopants. By tracking the magnetoconductance (MC) in a low doping regime we observed a progressive crossover from weak antilocalization (WAL) to weak localization (WL) as the Cr concentration increases. In a high doping regime, however, increasing Cr concentration yields a monotonically enhanced anomalous Hall effect (AHE) accompanied by an increasing carrier density. Our results demonstrate a possibility of manipulating bulk ferromagnetism and quantum transport in magnetic TI, thus providing an alternative way for experimentally realizing exotic quantum states required by spintronic applications.
Quantum Corrections Crossover and Ferromagnetism in Magnetic Topological Insulators
Bao, Lihong; Wang, Weiyi; Meyer, Nicholas; Liu, Yanwen; Zhang, Cheng; Wang, Kai; Ai, Ping; Xiu, Faxian
2013-01-01
Revelation of emerging exotic states of topological insulators (TIs) for future quantum computing applications relies on breaking time-reversal symmetry and opening a surface energy gap. Here, we report on the transport response of Bi2Te3 TI thin films in the presence of varying Cr dopants. By tracking the magnetoconductance (MC) in a low doping regime we observed a progressive crossover from weak antilocalization (WAL) to weak localization (WL) as the Cr concentration increases. In a high doping regime, however, increasing Cr concentration yields a monotonically enhanced anomalous Hall effect (AHE) accompanied by an increasing carrier density. Our results demonstrate a possibility of manipulating bulk ferromagnetism and quantum transport in magnetic TI, thus providing an alternative way for experimentally realizing exotic quantum states required by spintronic applications. PMID:23928713
Coulomb impurity scattering in topological insulator thin films
Yin, Gen; Wickramaratne, Darshana; Lake, Roger K.; Zhao, Yuanyuan
2014-07-21
Inter-surface coupling in thin-film topological insulators can reduce the surface state mobility by an order of magnitude in low-temperature transport measurements. The reduction is caused by a reduction in the group velocity and an increased s{sub z} component of the surface-state spin which weakens the selection rule against large-angle scattering. An intersurface potential splits the degenerate bands into a Rashba-like bandstructure. This reduces the intersurface coupling, it largely restores the selection rule against large angle scattering, and the ring-shaped valence band further reduces backscattering by requiring, on average, larger momentum transfer for backscattering events. The effects of temperature, Fermi level, and intersurface potential on the Coulomb impurity scattering limited mobility are analyzed and discussed.
Spin Transfer Torque Generated by the Topological Insulator Bismuth Selenide
NASA Astrophysics Data System (ADS)
Mellnik, Alex; Grab, Jennifer L.; Mintun, Peter J.; Lee, Joon S.; Richardella, Anthony; Buhrman, Robert A.; Samarth, Nitin; Ralph, Dan C.
2014-03-01
We measure large spin-transfer torques generated by in-plane currents in thin films of the topological insulator bismuth selenide at room temperature. We use spin-torque ferromagnetic resonance in Bi2Se3/Ni81Fe19 bilayers to determine that the spin-torque arising from the Bi2Se3 and acting on the Ni81Fe19 layer possesses substantial vector components both in the sample plane and perpendicular to the plane. The out-of-plane torque is several times larger than expected from the Oersted field, and the efficiency of in-plane (anti-damping) spin torque generation per unit current density in the Bi2Se3 is greater than has been observed in any other material.
Anomalous Hall effect on the surface of topological Kondo insulators
NASA Astrophysics Data System (ADS)
König, E. J.; Ostrovsky, P. M.; Dzero, M.; Levchenko, A.
2016-07-01
We calculate the anomalous Hall conductivity σx y of the surface states in cubic topological Kondo insulators. We consider a generic model for the surface states with three Dirac cones on the (001) surface. The Fermi velocity, the Fermi momentum, and the Zeeman energy in different Dirac pockets may be unequal. The microscopic impurity potential mediates mixed intra- and interband extrinsic scattering processes. Our calculation of σx y is based on the Kubo-Streda diagrammatic approach. It includes diffractive skew scattering contributions originating from the rare two-impurity complexes. Remarkably, these contributions yield anomalous Hall conductivity that is independent of impurity concentration, and thus is of the same order as other known extrinsic side jump and skew scattering terms. We discuss various special cases of our results and the experimental relevance of our study in the context of the recent hysteretic magnetotransport data in SmB6 samples.
Realizing topological Mott insulators from the RKKY interaction
NASA Astrophysics Data System (ADS)
Liu, Tianhan; Douçot, Benoît; Le Hur, Karyn
2016-05-01
We engineer topological insulating phases in a fermion-fermion mixture on the honeycomb lattice, without resorting to artificial gauge fields or spin-orbit couplings and considering only local interactions. Essentially, upon integrating out the fast component (characterized by a larger hopping amplitude) in a finite region of dopings, we obtain an effective interaction between the slow fermions at half-filling, which acquires a Haldane mass with opposite parity in the two valleys of the Dirac cones, thus triggering a quantum anomalous Hall effect. We carefully analyze the competition between the induced Semenoff-type mass (producing charge density wave orders in real space) versus the Haldane mass (quantum anomalous Hall phase), as a function of the chemical potential of the fast fermions. If the second species involves spin-1/2 particles, this interaction may induce a quantum spin Hall phase. Such fermion-fermion mixtures can be realized in optical lattices or in graphene heterostructures.
Quantum Hall edge states in topological insulator nanoribbons
NASA Astrophysics Data System (ADS)
Pertsova, A.; Canali, C. M.; MacDonald, A. H.
2016-09-01
We present a microscopic theory of the chiral one-dimensional electron gas system localized on the sidewalls of magnetically doped Bi2Se3 -family topological insulator nanoribbons in the quantum anomalous Hall effect (QAHE) regime. Our theory is based on a simple continuum model of sidewall states whose parameters are extracted from detailed ribbon and film geometry tight-binding model calculations. In contrast to the familiar case of the quantum Hall effect in semiconductor quantum wells, the number of microscopic chiral channels depends simply and systematically on the ribbon thickness and on the position of the Fermi level within the surface state gap. We use our theory to interpret recent transport experiments that exhibit nonzero longitudinal resistance in samples with accurately quantized Hall conductances.
Competing weak localization and weak antilocalization in ultrathin topological insulators.
Lang, Murong; He, Liang; Kou, Xufeng; Upadhyaya, Pramey; Fan, Yabin; Chu, Hao; Jiang, Ying; Bardarson, Jens H; Jiang, Wanjun; Choi, Eun Sang; Wang, Yong; Yeh, Nai-Chang; Moore, Joel; Wang, Kang L
2013-01-01
We demonstrate evidence of a surface gap opening in topological insulator (TI) thin films of (Bi(0.57)Sb(0.43))(2)Te(3) below six quintuple layers through transport and scanning tunneling spectroscopy measurements. By effective tuning the Fermi level via gate-voltage control, we unveil a striking competition between weak localization and weak antilocalization at low magnetic fields in nonmagnetic ultrathin films, possibly owing to the change of the net Berry phase. Furthermore, when the Fermi level is swept into the surface gap of ultrathin samples, the overall unitary behaviors are revealed at higher magnetic fields, which are in contrast to the pure WAL signals obtained in thicker films. Our findings show an exotic phenomenon characterizing the gapped TI surface states and point to the future realization of quantum spin Hall effect and dissipationless TI-based applications.
Room Temperature Electrical Detection of Spin Polarized Currents in Topological Insulators.
Dankert, André; Geurs, Johannes; Kamalakar, M Venkata; Charpentier, Sophie; Dash, Saroj P
2015-12-01
Topological insulators (TIs) are a new class of quantum materials that exhibit a current-induced spin polarization due to spin-momentum locking of massless Dirac Fermions in their surface states. This helical spin polarization in three-dimensional (3D) TIs has been observed using photoemission spectroscopy up to room temperatures. Recently, spin polarized surface currents in 3D TIs were detected electrically by potentiometric measurements using ferromagnetic detector contacts. However, these electric measurements are so far limited to cryogenic temperatures. Here we report the room temperature electrical detection of the spin polarization on the surface of Bi2Se3 by employing spin sensitive ferromagnetic tunnel contacts. The current-induced spin polarization on the Bi2Se3 surface is probed by measuring the magnetoresistance while switching the magnetization direction of the ferromagnetic detector. A spin resistance of up to 70 mΩ is measured at room temperature, which increases linearly with current bias, reverses sign with current direction, and decreases with higher TI thickness. The magnitude of the spin signal, its sign, and control experiments, using different measurement geometries and interface conditions, rule out other known physical effects. These findings provide further information about the electrical detection of current-induced spin polarizations in 3D TIs at ambient temperatures and could lead to innovative spin-based technologies.
Wojek, B M; Berntsen, M H; Jonsson, V; Szczerbakow, A; Dziawa, P; Kowalski, B J; Story, T; Tjernberg, O
2015-10-13
Since the advent of topological insulators hosting Dirac surface states, efforts have been made to gap these states in a controllable way. A new route to accomplish this was opened up by the discovery of topological crystalline insulators where the topological states are protected by crystal symmetries and thus prone to gap formation by structural changes of the lattice. Here we show a temperature-driven gap opening in Dirac surface states within the topological crystalline insulator phase in (Pb,Sn)Se. By using angle-resolved photoelectron spectroscopy, the gap formation and mass acquisition is studied as a function of composition and temperature. The resulting observations lead to the addition of a temperature- and composition-dependent boundary between massless and massive Dirac states in the topological phase diagram for (Pb,Sn)Se (001). Overall, our results experimentally establish the possibility to tune between massless and massive topological states on the surface of a topological system.
NASA Astrophysics Data System (ADS)
Kaden, R.; Kolbe, T. H.
2012-07-01
Virtual 3D city models are integrated complex compositions of spatial data of different themes, origin, quality, scale, and dimensions. Within this paper, we address the problem of spatial compatibility of geodata aiming to provide support for ad-hoc integration of virtual 3D city models including geodata of different sources and themes like buildings, terrain, and city furniture. In contrast to related work which is dealing with the integration of redundant geodata structured according to different data models and ontologies, we focus on the integration of complex 3D models of the same representation (here: CityGML) but regarding to the geometric-topological consistent matching of non-homologous objects, e.g. a building is connected to a road, and their geometric homogenisation. Therefore, we present an approach including a data model for a Geodata Join and the general concept of an integration procedure using the join information. The Geodata Join aims to bridge the lack of information between fragmented geodata by describing the relationship between adjacent objects from different datasets. The join information includes the geometrical representation of those parts of an object, which have a specific/known topological or geometrical relationship to another object. This part is referred to as a Connector and is either described by points, lines, or surfaces of the existing object geometry or by additional join geometry. In addition, the join information includes the specification of the connected object in the other dataset and the description of the topological and geometrical relationship between both objects, which is used to aid the matching process. Furthermore, the Geodata Join contains object-related information like accuracy values and restrictions of movement and deformation which are used to optimize the integration process. Based on these parameters, a functional model including a matching algorithm, transformation methods, and conditioned adjustment
Topological insulator Bi2Te3 nanowire field effect devices
NASA Astrophysics Data System (ADS)
Jauregui, Luis A.; Zhang, Genqiang; Wu, Yue; Chen, Yong P.
2012-02-01
Bismuth telluride (Bi2Te3) has been studied extensively as one of the best thermoelectric materials and recently shown to be a prototype topological insulator with nontrivial conducting surface states. We have grown Bi2Te3 nanowires by a two-step solution phase reaction and characterized their material and structural properties by XRD, TEM, XPS and EDS. We fabricate both backgated (on SiO2/Si) and top-gated (with ALD high-k gate dielectric such as Al2O3 or HfO2) field effect devices on such nanowires with diameters ˜50nm. Ambipolar field effect and a resistance modulation of up to 600% at low temperatures have been observed. The 4-terminal resistance shows insulating behavior (increasing with decreasing temperature) from 300 K to 50K, then saturates in a plateau for temperatures below 50K, consistent with the presence of metallic surface state. Aharonov--Bohm (AB) oscillations are observed in the magneto-resistance with a magnetic field parallel to the nanowire, providing further evidence of the presence of surface state conduction Finally, a prominent weak anti-localization (WAL) feature that weakens with increasing magnetic field and/or temperature is observed in the magneto-resistance with a magnetic field perpendicular to the nanowire.
Nonlinear dynamics induced anomalous Hall effect in topological insulators
Wang, Guanglei; Xu, Hongya; Lai, Ying-Cheng
2016-01-01
We uncover an alternative mechanism for anomalous Hall effect. In particular, we investigate the magnetisation dynamics of an insulating ferromagnet (FM) deposited on the surface of a three-dimensional topological insulator (TI), subject to an external voltage. The spin-polarised current on the TI surface induces a spin-transfer torque on the magnetisation of the top FM while its dynamics can change the transmission probability of the surface electrons through the exchange coupling and hence the current. We find a host of nonlinear dynamical behaviors including multistability, chaos, and phase synchronisation. Strikingly, a dynamics mediated Hall-like current can arise, which exhibits a nontrivial dependence on the channel conductance. We develop a physical understanding of the mechanism that leads to the anomalous Hall effect. The nonlinear dynamical origin of the effect stipulates that a rich variety of final states exist, implying that the associated Hall current can be controlled to yield desirable behaviors. The phenomenon can find applications in Dirac-material based spintronics. PMID:26819223
Interaction-induced topological insulator states in strained graphene.
Abanin, D A; Pesin, D A
2012-08-10
The electronic properties of graphene can be manipulated via mechanical deformations, which opens prospects for both studying the Dirac fermions in new regimes and for new device applications. Certain natural configurations of strain generate large nearly uniform pseudomagnetic fields, which have opposite signs in the two valleys, and give rise to flat spin- and valley-degenerate pseudo-Landau levels (PLLs). Here we consider the effect of the Coulomb interactions in strained graphene with a uniform pseudomagnetic field. We show that the spin or valley degeneracies of the PLLs get lifted by the interactions, giving rise to topological insulator states. In particular, when a nonzero PLL is quarter or three-quarter filled, an anomalous quantum Hall state spontaneously breaking time-reversal symmetry emerges. At half-filled PLLs, a weak spin-orbital interaction stabilizes the time-reversal-symmetric quantum spin-Hall state. These many-body states are characterized by the quantized conductance and persist to a high temperature scale set by the Coulomb interactions, which we estimate to be a few hundreds Kelvin at moderate strain values. At fractional fillings, fractional quantum Hall states breaking valley symmetry emerge. These results suggest a new route to realizing robust topological states in mesoscopic graphene.
Oxidation Effects in Rare Earth Doped Topological Insulator Thin Films.
Figueroa, A I; van der Laan, G; Harrison, S E; Cibin, G; Hesjedal, T
2016-01-01
The breaking of time-reversal symmetry (TRS) in topological insulators is a prerequisite for unlocking their exotic properties and for observing the quantum anomalous Hall effect (QAHE). The incorporation of dopants which exhibit magnetic long-range order is the most promising approach for TRS-breaking. REBiTe3, wherein 50% of the Bi is substitutionally replaced by a RE atom (RE = Gd, Dy, and Ho), is a predicted QAHE system. Despite the low solubility of REs in bulk crystals of a few %, highly doped thin films have been demonstrated, which are free of secondary phases and of high crystalline quality. Here we study the effects of exposure to atmosphere of rare earth-doped Bi2(Se, Te)3 thin films using x-ray absorption spectroscopy. We demonstrate that these RE dopants are all trivalent and effectively substitute for Bi(3+) in the Bi2(Se, Te)3 matrix. We find an unexpected high degree of sample oxidation for the most highly doped samples, which is not restricted to the surface of the films. In the low-doping limit, the RE-doped films mostly show surface oxidation, which can be prevented by surface passivation, encapsulation, or in-situ cleaving to recover the topological surface state. PMID:26956771
Oxidation Effects in Rare Earth Doped Topological Insulator Thin Films
Figueroa, A. I.; van der Laan, G.; Harrison, S. E.; Cibin, G.; Hesjedal, T.
2016-01-01
The breaking of time-reversal symmetry (TRS) in topological insulators is a prerequisite for unlocking their exotic properties and for observing the quantum anomalous Hall effect (QAHE). The incorporation of dopants which exhibit magnetic long-range order is the most promising approach for TRS-breaking. REBiTe3, wherein 50% of the Bi is substitutionally replaced by a RE atom (RE = Gd, Dy, and Ho), is a predicted QAHE system. Despite the low solubility of REs in bulk crystals of a few %, highly doped thin films have been demonstrated, which are free of secondary phases and of high crystalline quality. Here we study the effects of exposure to atmosphere of rare earth-doped Bi2(Se, Te)3 thin films using x-ray absorption spectroscopy. We demonstrate that these RE dopants are all trivalent and effectively substitute for Bi3+ in the Bi2(Se, Te)3 matrix. We find an unexpected high degree of sample oxidation for the most highly doped samples, which is not restricted to the surface of the films. In the low-doping limit, the RE-doped films mostly show surface oxidation, which can be prevented by surface passivation, encapsulation, or in-situ cleaving to recover the topological surface state. PMID:26956771
Encapsulated Silicene: A Robust Large-Gap Topological Insulator.
Kou, Liangzhi; Ma, Yandong; Yan, Binghai; Tan, Xin; Chen, Changfeng; Smith, Sean C
2015-09-01
The quantum spin Hall (QSH) effect predicted in silicene has raised exciting prospects of new device applications compatible with current microelectronic technology. Efforts to explore this novel phenomenon, however, have been impeded by fundamental challenges imposed by silicene's small topologically nontrivial band gap and fragile electronic properties susceptible to environmental degradation effects. Here we propose a strategy to circumvent these challenges by encapsulating silicene between transition-metal dichalcogenides (TMDCs) layers. First-principles calculations show that such encapsulated silicene exhibit a two-orders-of-magnitude enhancement in its nontrivial band gap, which is driven by the strong spin-orbit coupling effect in TMDCs via the proximity effect. Moreover, the cladding TMDCs layers also shield silicene from environmental gases that are detrimental to the QSH state in free-standing silicene. The encapsulated silicene represents a novel two-dimensional topological insulator with a robust nontrivial band gap suitable for room-temperature applications, which has significant implications for innovative QSH device design and fabrication.
Strain in a silicon-on-insulator nanostructure revealed by 3D x-ray Bragg ptychography.
Chamard, V; Allain, M; Godard, P; Talneau, A; Patriarche, G; Burghammer, M
2015-01-01
Progresses in the design of well-defined electronic band structure and dedicated functionalities rely on the high control of complex architectural device nano-scaled structures. This includes the challenging accurate description of strain fields in crystalline structures, which requires non invasive and three-dimensional (3D) imaging methods. Here, we demonstrate in details how x-ray Bragg ptychography can be used to quantify in 3D a displacement field in a lithographically patterned silicon-on-insulator structure. The image of the crystalline properties, which results from the phase retrieval of a coherent intensity data set, is obtained from a well-controlled optimized process, for which all steps are detailed. These results confirm the promising perspectives of 3D Bragg ptychography for the investigation of complex nano-structured crystals in material science.
Surface-State Spin Textures and Mirror Chern Numbers in Topological Kondo Insulators.
Legner, Markus; Rüegg, Andreas; Sigrist, Manfred
2015-10-01
The recent discovery of topological Kondo insulators has triggered renewed interest in the well-known Kondo insulator samarium hexaboride, which is hypothesized to belong to this family. In this Letter, we study the spin texture of the topologically protected surface states in such a topological Kondo insulator. In particular, we derive close relationships between (i) the form of the hybridization matrix at certain high-symmetry points, (ii) the mirror Chern numbers of the system, and (iii) the observable spin texture of the topological surface states. In this way, a robust classification of topological Kondo insulators and their surface-state spin texture is achieved. We underpin our findings with numerical calculations of several simplified and realistic models for systems like samarium hexaboride.
NASA Astrophysics Data System (ADS)
Wang, Hailong; Kally, James; Lee, Joon Sue; Liu, Tao; Chang, Houchen; Hickey, Danielle Reifsnyder; Mkhoyan, K. Andre; Wu, Mingzhong; Richardella, Anthony; Samarth, Nitin
2016-08-01
We report the observation of ferromagnetic resonance-driven spin pumping signals at room temperature in three-dimensional topological insulator thin films—Bi2Se3 and (Bi,Sb ) 2Te3 —deposited by molecular beam epitaxy on Y3 Fe5 O12 thin films. By systematically varying the Bi2 Se3 film thickness, we show that the spin-charge conversion efficiency, characterized by the inverse Rashba-Edelstein effect length (λIREE ), increases dramatically as the film thickness is increased from two quintuple layers, saturating above six quintuple layers. This suggests a dominant role of surface states in spin and charge interconversion in topological-insulator-ferromagnet heterostructures. Our conclusion is further corroborated by studying a series of Y3 Fe5 O12 /(Bi,Sb ) 2Te3 heterostructures. Finally, we use the ferromagnetic resonance linewidth broadening and the inverse Rashba-Edelstein signals to determine the effective interfacial spin mixing conductance and λIREE.
Wang, Hailong; Kally, James; Lee, Joon Sue; Liu, Tao; Chang, Houchen; Hickey, Danielle Reifsnyder; Mkhoyan, K Andre; Wu, Mingzhong; Richardella, Anthony; Samarth, Nitin
2016-08-12
We report the observation of ferromagnetic resonance-driven spin pumping signals at room temperature in three-dimensional topological insulator thin films-Bi_{2}Se_{3} and (Bi,Sb)_{2}Te_{3}-deposited by molecular beam epitaxy on Y_{3}Fe_{5}O_{12} thin films. By systematically varying the Bi_{2}Se_{3} film thickness, we show that the spin-charge conversion efficiency, characterized by the inverse Rashba-Edelstein effect length (λ_{IREE}), increases dramatically as the film thickness is increased from two quintuple layers, saturating above six quintuple layers. This suggests a dominant role of surface states in spin and charge interconversion in topological-insulator-ferromagnet heterostructures. Our conclusion is further corroborated by studying a series of Y_{3}Fe_{5}O_{12}/(Bi,Sb)_{2}Te_{3} heterostructures. Finally, we use the ferromagnetic resonance linewidth broadening and the inverse Rashba-Edelstein signals to determine the effective interfacial spin mixing conductance and λ_{IREE}. PMID:27563980
Qin, Wei; Zhang, Zhenyu
2014-12-31
At the interface of an s-wave superconductor and a three-dimensional topological insulator, Majorana zero modes and Majorana helical states have been proposed to exist respectively around magnetic vortices and geometrical edges. Here we first show that randomly distributed magnetic impurities at such an interface will induce bound states that broaden into impurity bands inside (but near the edges of) the superconducting gap, which remains open unless the impurity concentration is too high. Next we find that an increase in the superconducting gap suppresses both the oscillation magnitude and the period of the Ruderman-Kittel-Kasuya-Yosida interaction between two magnetic impurities. Within a mean-field approximation, the ferromagnetic Curie temperature is found to be essentially independent of the superconducting gap, an intriguing phenomenon due to a compensation effect between the short-range ferromagnetic and long-range antiferromagnetic interactions. The existence of robust superconductivity and persistent ferromagnetism at the interface allows realization of a novel topological phase transition from a nonchiral to a chiral superconducting state at sufficiently low temperatures, providing a new platform for topological quantum computation.
Metallic and Insulating Phases of Interacting Fermions in a 3D Optical Lattice
NASA Astrophysics Data System (ADS)
Hackermueller, Lucia
2010-03-01
Ultracold fermions in optical lattices are a promising tool to simulate solid state physics, since they represent an ideal and highly tunable implementation of the Hubbard Hamiltonian. A proof of principle is to demonstrate a Mott insulating state, where repulsive interactions between the atoms lead to an insulating behavior in a half-filled conduction band. In our experiments we study repulsively and attractively interacting ^40K atoms within the combination of a red-detuned dipole trap and a blue detuned lattice. This setup allows us to gradually transform the system from metallic to Mott-insulating and band insulating states. We measure the phase of the system by analyzing the system size and the number of doubly occupied sites and compare our findings to DMFT theory. In addition we investigate the dynamical behavior of interacting fermionic mixtures. We prepare a band insulating system and suddenly release it into a homogenous lattice. We detect a symmetric behavior from a ballistic expansion for non-interacting clouds to a strongly suppressed expansion due to the formation of attractively or repulsively bound pairs. This experiment allows us to study transport properties of the Hubbard model. This work was done together with U.Schneider, S. Will, Th. Best, S. Braun, I. Bloch and with theoretical support from T.A. Costi, R.W. Helmes, D. Rasch, A.Rosch, B. Paredes, M. Moreno-Cardoner, T. Kitagawa, E.Demler.
Exotic quantum critical point on the surface of three-dimensional topological insulator
NASA Astrophysics Data System (ADS)
Bi, Zhen; You, Yi-Zhuang; Xu, Cenke
2016-07-01
In the last few years a lot of exotic and anomalous topological phases were constructed by proliferating the vortexlike topological defects on the surface of the 3 d topological insulator (TI) [Fidkowski et al., Phys. Rev. X 3, 041016 (2013), 10.1103/PhysRevX.3.041016; Chen et al., Phys. Rev. B 89, 165132 (2014), 10.1103/PhysRevB.89.165132; Bonderson et al., J. Stat. Mech. (2013) P09016, 10.1088/1742-5468/2013/09/P09016; Wang et al., Phys. Rev. B 88, 115137 (2013), 10.1103/PhysRevB.88.115137; Metlitski et al., Phys. Rev. B 92, 125111 (2015), 10.1103/PhysRevB.92.125111]. In this work, rather than considering topological phases at the boundary, we will study quantum critical points driven by vortexlike topological defects. In general, we will discuss a (2 +1 )d quantum phase transition described by the following field theory: L =ψ ¯γμ(∂μ-i aμ) ψ +| (∂μ-i k aμ) ϕ| 2+r|ϕ | 2+g |ϕ| 4 , with tuning parameter r , arbitrary integer k , Dirac fermion ψ , and complex scalar bosonic field ϕ , which both couple to the same (2 +1 )d dynamical noncompact U(1) gauge field aμ. The physical meaning of these quantities/fields will be explained in the text. Making use of the new duality formalism developed in [Metlitski et al., Phys. Rev. B 93, 245151 (2016), 10.1103/PhysRevB.93.245151; Wang et al., Phys. Rev. X 5, 041031 (2015), 10.1103/PhysRevX.5.041031; Wang et al., Phys. Rev. B 93, 085110 (2016), 10.1103/PhysRevB.93.085110; D. T. Son, Phys. Rev. X 5, 031027 (2015), 10.1103/PhysRevX.5.031027], we demonstrate that this quantum critical point has a quasi-self-dual nature. And at this quantum critical point, various universal quantities such as the electrical conductivity and scaling dimension of gauge-invariant operators, can be calculated systematically through a 1 /k2 expansion, based on the observation that the limit k →+∞ corresponds to an ordinary 3 d X Y transition.
Magnetic transitions in the topological magnon insulator Cu(1,3-bdc)
NASA Astrophysics Data System (ADS)
Chisnell, R.; Helton, J. S.; Freedman, D. E.; Singh, D. K.; Demmel, F.; Stock, C.; Nocera, D. G.; Lee, Y. S.
2016-06-01
Topological magnon insulators are a new class of magnetic materials that possess topologically nontrivial magnon bands. As a result, magnons in these materials display properties analogous to those of electrons in topological insulators. Here we present magnetization, specific heat, and neutron scattering measurements of the ferromagnetic kagome magnet Cu(1,3-bdc). Our measurements provide a detailed description of the magnetic structure and interactions in this material and confirm that it is an ideal prototype for topological magnon physics in a system with a simple spin Hamiltonian.
NASA Astrophysics Data System (ADS)
Molotkov, S. N.; Ryzhkin, M. I.
2015-08-01
The so-called ℒ2 classification of topological insulators has been previously proposed on the basis of the bulk-boundary correspondence. This classification is commonly accepted and involves the following statements [L. Fu and C. L. Kane, Phys. Rev. B 76, 045302 (2007)]: (i) nontrivial ℒ2 invariants imply the existence of gapless surface states, (ii) the ℒ2 invariants can be deduced from the topological structure of the Bloch wave functions of the bulk crystal in the Brillouin zone. In this work, a simple counterexample has been given for the ℒ2 classification. It has been shown that both topologically stable and topologically unstable surface states can exist on surfaces, at the same bulk, at the same space symmetry of a semi-infinite crystal, and, correspondingly, at a trivial value of the ℒ2 invariant (at the trivial class of equivalence of the bulk Hamiltonian) for the 3D → 2D system. Furthermore, topologically stable surface states can exist at both trivial (Bi(111) surface) and nontrivial (Sb(111) surface) values of the bulk ℒ2 invariant. In view of these facts, the statement that the ℒ2 classification based on the bulk-boundary correspondence is responsible for the appearance and topological stability of surface states is doubtful.
High-performance Bi(2)Te(3)-based topological insulator film magnetic field detector.
Zhang, H B; Li, H; Shao, J M; Li, S W; Bao, D H; Yang, G W
2013-11-27
Topological insulators with the nanoscaled metallic surface state (3-5 nm) are actually of typical functional nanostructures. Significant efforts have been devoted to study new families of topological insulators and identifications of topological surface state, as well as fundamental physics issues relating to spin-polarized surface electronic states in the past few years. However, transport investigations that can provide direct experimental evidence for potentially practical applications of topological insulators are limited, and realization of functional devices based on topological insulators is still under exploration. Here, using the Sn-doping Bi2Te3 polycrystalline topological insulator films, we fabricated high-performance current-controlled magnetic field detectors. When a parallel magnetic field is applied, the as-fabricated device exhibits a stable and reproducible magneto-resistance (MR) switching behavior, and the corresponding MR ratio can be modulated by the applied current. Even under such a low magnetic field (0.5 kG), the device still shows a distinguishable MR switching performance, suggesting that topological insulator devices are very sensitive to external stimulation and potentially applicable to weak magnetic field detection.
First-principles study of temperature effects in topological insulator phase diagrams
NASA Astrophysics Data System (ADS)
Antonius, Gabriel; Louie, Steven
Recent studies have identified several tunable three-dimensional topological insulators. Upon varying experimental parameters such as pressure or doping, these materials exhibit a transition between a trivial and a topological insulating phase. We present a first-principles study of temperature effects in the family of alloyed BiTlS2 / BiTlSe2 topological phase transition materials. Through the electron-phonon coupling, the electronic bands being renormalized at finite temperature allow for a topological phase transition at some critical temperature. We find a temperature-doping phase diagram having a confined topological phase region, with the topological phase suppressed at high temperature. We also discuss the converse scenario in which phonons might favour the topological phase, as previously anticipated. This work was supported by the NSF under Grant No. DMR15-1508412 and the DOE under Contract No. DE-AC02-05CH11231.
Self-organized pseudo-graphene on grain boundaries in topological band insulators
NASA Astrophysics Data System (ADS)
Slager, Robert-Jan; Juričić, Vladimir; Lahtinen, Ville; Zaanen, Jan
2016-06-01
Semimetals are characterized by nodal band structures that give rise to exotic electronic properties. The stability of Dirac semimetals, such as graphene in two spatial dimensions, requires the presence of lattice symmetries, while akin to the surface states of topological band insulators, Weyl semimetals in three spatial dimensions are protected by band topology. Here we show that in the bulk of topological band insulators, self-organized topologically protected semimetals can emerge along a grain boundary, a ubiquitous extended lattice defect in any crystalline material. In addition to experimentally accessible electronic transport measurements, these states exhibit a valley anomaly in two dimensions influencing edge spin transport, whereas in three dimensions they appear as graphenelike states that may exhibit an odd-integer quantum Hall effect. The general mechanism underlying these semimetals—the hybridization of spinon modes bound to the grain boundary—suggests that topological semimetals can emerge in any topological material where lattice dislocations bind localized topological modes.
Magnetic and structural properties of Mn-doped Bi2Se3 topological insulators
NASA Astrophysics Data System (ADS)
Tarasenko, R.; Vališka, M.; Vondráček, M.; Horáková, K.; Tkáč, V.; Carva, K.; Baláž, P.; Holý, V.; Springholz, G.; Sechovský, V.; Honolka, J.
2016-01-01
A thorough investigation is presented of the magnetic and structural properties of Mn-doped Bi2Se3 topological insulators grown by molecular beam epitaxy on top of insulating BaF2 (111) substrates. The magnetic properties have been studied in the temperature range from 2 K to 300 K in magnetic fields up to 7 T. The systems were further characterized by means of high-resolution X-ray diffraction, electron-microprobe analysis, and X-ray photoemission spectroscopy. Samples with the atomic concentration of Mn up to about 0.06 exhibit an almost perfect crystalline structure while, for higher Mn concentrations, diffuse scattering from defects is observed. Photoemission results suggest a localized non-metallic Mn 3d5 ground state which is weakly or intermediately coupled to the Bi2Se3 environment. The exchange interaction between the Mn moments leads to a ferromagnetic phase at low temperatures with a roughly linear relation between the Curie temperature and the atomic concentration of Mn.
NASA Astrophysics Data System (ADS)
Ansola, R.; Veguería, E.; Alonso, C.; Querin, O. M.
2016-03-01
This work presents a sequential element rejection and admission (SERA) method for optimum topology design of three dimensional compliant actuators. The proposed procedure has been successfully applied to several topology optimization problems, but most investigations for compliant devices design have been focused on planar systems. This investigation aims to progress on this line, where a generalization of the method for three dimensional topology optimization is explored. The methodology described in this work is useful for the synthesis of high performance flexure based micro and nano manipulation applications demanding for both sensing and control of motion and force trajectories. In this case the goal of the topology optimization problem is to design an actuator that transfers work from the input point to the output port in a structurally efficient way. Here we will use the classical formulation where the displacement performed on a work piece modelled by a spring is maximized. The technique implemented works with two separate criteria for the rejection and admission of elements to efficiently achieve the optimum design and overcomes problems encountered by other evolutionary methods when dealing with compliant mechanisms design. The use of the algorithm is demonstrated through several numerical examples.
NASA Astrophysics Data System (ADS)
Scharf, Benedikt
Hybrid semiconductor structures with strong spin-orbit coupling are responsible for many fascinating phenomena. Topological states in systems of reduced dimensionality, in particular, offer many intriguing possibilities, both for fundamental research as well as for potential applications. In this talk, we describe the importance of the interplay of spin-orbit coupling (SOC) and the sample geometry in realizing exotic Majorana fermions (MFs) in quantum dots and rings and discuss several schemes to detect MFs. An effective SOC from the magnetic textures provided by magnetic tunnel junctions could enable a versatile control of MFs and their adiabatic exchange. We show that in 2D topological insulators (TIs), such as inverted HgTe/CdTe QWs, helical quantum spin Hall (QSH) states persist even at finite magnetic fields below a critical magnetic field above which only quantum Hall (QH) states can be found. We propose magneto-optical absorption measurements to probe the magnetic-field induced transition between the QSH and QH regimes. This measurement scheme is robust against perturbations such as additional SOC due to bulk or structure-inversion asymmetry. Finally, tunnel junctions based on the surfaces of 3D TIs are presented. These junctions can exhibit giant tunneling anomalous Hall (TAH) currents and negative differential TAH conductance, which makes them an attractive and versatile system for spintronic applications.
Two-dimensional oxide topological insulator with iron-pnictide superconductor LiFeAs structure
NASA Astrophysics Data System (ADS)
Xu, Qiunan; Song, Zhida; Nie, Simin; Weng, Hongming; Fang, Zhong; Dai, Xi
2015-11-01
By using first-principles calculations, we propose that ZrSiO can be looked at as a three-dimensional (3D) oxide weak topological insulator (TI) and its single layer is a long-sought-after 2D oxide TI with a band gap up to 30 meV. Calculated phonon spectrum of the single layer ZrSiO indicates it is dynamically stable and the experimental achievements in growing oxides with atomic precision ensure that it can be readily synthesized. This will lead to novel devices based on TIs, the so-called "topotronic" devices, operating under room temperature and stable when exposed in the air. Thus a new field of "topotronics" will arise. Another intriguing thing is this oxide 2D TI has the similar crystal structure as the well-known iron-pnictide superconductor LiFeAs. This brings great promise in realizing the combination of superconductor and TI, paving the way to various extraordinary quantum phenomena, such as topological superconductor and Majorana modes. We further find that there are many other isostructural compounds hosting the similar electronic structure and forming a W H M family with W being Zr, Hf, or La, H being group IV or group V element, and M being group VI one.
NASA Astrophysics Data System (ADS)
Vondráček, M.; Cornils, L.; Minár, J.; Warmuth, J.; Michiardi, M.; Piamonteze, C.; Barreto, L.; Miwa, J. A.; Bianchi, M.; Hofmann, Ph.; Zhou, L.; Kamlapure, A.; Khajetoorians, A. A.; Wiesendanger, R.; Mi, J.-L.; Iversen, B.-B.; Mankovsky, S.; Borek, St.; Ebert, H.; Schüler, M.; Wehling, T.; Wiebe, J.; Honolka, J.
2016-10-01
We report on the quenching of single Ni adatom moments on Te-terminated Bi2Te2Se and Bi2Te3 topological insulator surfaces. The effect is noted as a missing x-ray magnetic circular dichroism for resonant L3 ,2 transitions into partially filled Ni 3 d states of theory-derived occupancy nd=9.2 . On the basis of a comparative study of Ni and Fe using scanning tunneling microscopy and ab initio calculations, we are able to relate the element specific moment formation to a local Stoner criterion. Our theory shows that while Fe adatoms form large spin moments of ms=2.54 μB with out-of-plane anisotropy due to a sufficiently large density of states at the Fermi energy, Ni remains well below an effective Stoner threshold for local moment formation. With the Fermi level remaining in the bulk band gap after adatom deposition, nonmagnetic Ni and preferentially out-of-plane oriented magnetic Fe with similar structural properties on Bi2Te2Se surfaces constitute a perfect platform to study the off-on effects of time-reversal symmetry breaking on topological surface states.
Massive Dirac Fermion Observed in Lanthanide-Doped Topological Insulator Thin Films
Harrison, S. E.; Collins-McIntyre, L. J.; Schönherr, P.; Vailionis, A.; Srot, V.; van Aken, P. A.; Kellock, A. J.; Pushp, A.; Parkin, S. S. P.; Harris, J. S.; Zhou, B.; Chen, Y. L.; Hesjedal, T.
2015-01-01
The breaking of time reversal symmetry (TRS) in three-dimensional (3D) topological insulators (TIs), and thus the opening of a ‘Dirac-mass gap’ in the linearly dispersed Dirac surface state, is a prerequisite for unlocking exotic physical states. Introducing ferromagnetic long-range order by transition metal doping has been shown to break TRS. Here, we present the study of lanthanide (Ln) doped Bi2Te3, where the magnetic doping with high-moment lanthanides promises large energy gaps. Using molecular beam epitaxy, single-crystalline, rhombohedral thin films with Ln concentrations of up to ~35%, substituting on Bi sites, were achieved for Dy, Gd, and Ho doping. Angle-resolved photoemission spectroscopy shows the characteristic Dirac cone for Gd and Ho doping. In contrast, for Dy doping above a critical doping concentration, a gap opening is observed via the decreased spectral intensity at the Dirac point, indicating a topological quantum phase transition persisting up to room-temperature. PMID:26503435
Zero field conductance singularity in two terminal ferromagnet-topological insulator device
NASA Astrophysics Data System (ADS)
Duan, Xiaopeng; Semenov, Yuriy G.; Kim, Ki Wook
2014-03-01
Spin-momentum interlocking of surface electronic states on 3D topological insulator (TI) grants the unique opportunity to generate electric current directed according to the spin polarization of injected electrons instead of the applied electric field. Such asymmetry in momentum distribution of injected electrons takes place in the vicinity of ferromagnetic contact but vanishes on the length of few mean free passes. We propose to use this property in two terminal devices consisting of two parallel ferromagnetic contacts deposited on the surface of 3D TI. When the injected spin polarization leads to electron momentum pointing towards the other electrode, it facilitate the direct transmission, resulting in a lower resistance; in contrast with a reversed bias, the spin-determined momentum points away from the other electrode, because of which the electrons could gain the right momentum only after multiple scatterings to approach the second electrode, thus resulting in a higher resistance. We stress that this asymmetry in the resistance keeps up to arbitrarily small applied voltage since it does not need the formation of space charge region that is essential in conventional diodes. The rectification ratio near zero voltage are estimated and potential application are discussed. This work was supported, in part, by the US Army Research Office and FAME (one of six centers of STARnet, a SRC program sponsored by MARCO and DARPA).
Bi1-xSbx(110): A non-closed packed surface of a topological insulator
NASA Astrophysics Data System (ADS)
Barreto, Lucas; Silva, Wendell Simoes E.; Stensgaard, Malthe; Ulstrup, Søren; Bianchi, Marco; Zhu, Xie-Gang; Michiardi, Matteo; Dendzik, Maciej; Hofmann, Philip
2013-03-01
Topological insulators are characterised by an insulating bulk band structure, but topological considerations require their surfaces to support gap-less, metallic states. Meanwhile, many examples of such materials have been predicted and found experimentally, but experimental effort has concentrated on the closed-packed (111) surface of these materials. Thus, the theoretical picture of an insulating bulk embedded in a metallic surface from all sides of a crystal still needs to be confirmed. Here we present angle-resolved photoemission spectroscopy results from the (110) surface of the topological insulator Bi1-xSbx (x ~ 0 . 15). The observed band structure and Fermi contour are in excellent agreement with theoretical predictions and slightly different from the electronic structure of the parent surface Bi(110), in particular around the X1 time-reversal invariant momentum. We argue that the preparation of surfaces different from (111) opens the possibility to tailor the detailed electronic structure and properties of the topological surface states.
Stability of surface states of weak Z2 topological insulators and superconductors
NASA Astrophysics Data System (ADS)
Morimoto, Takahiro; Furusaki, Akira
2014-01-01
We study the stability against disorder of surface states of weak Z2 topological insulators (superconductors) which are stacks of strong Z2 topological insulators (superconductors), considering representative Dirac Hamiltonians in the Altland-Zirnbauer symmetry classes in various spatial dimensions. We show that, in the absence of disorder, surface Dirac fermions of weak Z2 topological insulators (superconductors) can be gapped out by a Dirac mass term which couples surface Dirac cones and leads to breaking of a translation symmetry (dimerization). The dimerization mass is a unique Dirac mass term in the surface Dirac Hamiltonian, and the two dimerized gapped phases which differ in the sign of the Dirac mass are distinguished by a Z2 index. In other words the dimerized surfaces can be regarded as a strong Z2 topological insulator (superconductor). We argue that the surface states are not localized by disorder when the ensemble average of the Dirac mass term vanishes.
Time-Reversal-Violating Photonic Topological Insulators with Helical Edge States
NASA Astrophysics Data System (ADS)
Ochiai, Tetsuyuki
2015-05-01
We theoretically demonstrate the realization of photonic topological insulators in photonic crystals made of circular cylinders with the Tellegen-type magnetoelectric coupling as a photospin-orbit interaction. Although the magnetoelectric coupling breaks the conventional (bosonic) time-reversal symmetry for photons, the electromagnetic duality between permittivity and permeability gives rise to a fermionic time-reversal symmetry. This symmetry along with the space-inversion symmetry enables us to imitate the Kane-Mele model of two-dimensional topological insulators in a photonics platform. Even if the space-inversion symmetry is broken, a photonic topological insulator can emerge owing to the photospin-orbit interaction. We present bulk and edge properties of the photonic topological insulators and discuss their possible realization.
Visualization of superparamagnetic dynamics in magnetic topological insulators.
Lachman, Ella O; Young, Andrea F; Richardella, Anthony; Cuppens, Jo; Naren, H R; Anahory, Yonathan; Meltzer, Alexander Y; Kandala, Abhinav; Kempinger, Susan; Myasoedov, Yuri; Huber, Martin E; Samarth, Nitin; Zeldov, Eli
2015-11-01
Quantized Hall conductance is a generic feature of two-dimensional electronic systems with broken time reversal symmetry. In the quantum anomalous Hall state recently discovered in magnetic topological insulators, time reversal symmetry is believed to be broken by long-range ferromagnetic order, with quantized resistance observed even at zero external magnetic field. We use scanning nanoSQUID (nano-superconducting quantum interference device) magnetic imaging to provide a direct visualization of the dynamics of the quantum phase transition between the two anomalous Hall plateaus in a Cr-doped (Bi,Sb)2Te3 thin film. Contrary to naive expectations based on macroscopic magnetometry, our measurements reveal a superparamagnetic state formed by weakly interacting magnetic domains with a characteristic size of a few tens of nanometers. The magnetic phase transition occurs through random reversals of these local moments, which drive the electronic Hall plateau transition. Surprisingly, we find that the electronic system can, in turn, drive the dynamics of the magnetic system, revealing a subtle interplay between the two coupled quantum phase transitions.
Electrical detection of spin-momentum locking in topological insulators
NASA Astrophysics Data System (ADS)
Li, Connie; van't Erve, Olaf; Robinson, Jeremy; Li, Yaoyi; Li, Lian; Jonker, Berry
2015-03-01
One of the most striking properties of topological insulators (TIs) is that of spin-momentum locking - the spin of the TI surface state lies in-plane, and is locked at right angle to the carrier momentum. While anticipated by theory, direct electrical access to this spin system in a simple transport structure had been challenging, due to that the bulk is typically unintentionally doped and contributes to transport. Using a ferromagnet/tunnel barrier detector contact that preferentially probes surface/interface spins, we have demonstrated the first direct electrical detection of spin-momentum locking in the TI surface states in MBE-grown Bi2Se3. However, as the bulk carrier concentration for Bi2Se3 is typically in the 1019/cm3 range, the Fermi level is well within the conduction band, where a significant portion of the current is shunted through the bulk. Moving the Fermi level to within the gap is desirable to eliminate current shunting, as well as contribution from Rashba 2DEG states that may dilute the signal. These results, as well as how they affect the spin signal measured will be discussed at the meeting. Supported by NRL core funds and Nanoscience Institute.
Interfacial charge and spin transport in Z2 topological insulators
NASA Astrophysics Data System (ADS)
Yamakage, Ai; Imura, Ken-Ichiro; Cayssol, Jérôme; Kuramoto, Yoshio
2011-03-01
The Kane-Mele model realizes a two-dimensional version of a Z2 topological insulator as an idealized model of graphene with intrinsic and extrinsic (Rashba) spin-orbit couplings. We study the transport of charge and spin in such a Dirac electron system in the presence of a sharp potential step, that is, a pn junction. An electron incident normal to the junction is completely reflected when Rashba coupling is dominant, whereas it is perfectly transmitted when the two types of couplings are balanced. The latter manifests in charge transport as a peak of conductance and a dip in Fano factor. Charge transport occurs in the direction normal to the barrier, whereas a spin current is induced along the barrier that is also localized in its vicinity. It is demonstrated that contributions from interband matrix elements and evanescent modes are responsible for such an interfacial spin Hall current. Our analysis of spin transport is based on the observation that in the case of vanishing Rashba coupling, each channel carries a conserved spin current, whereas only the integrated spin current is a conserved quantity in the general case. The perfect transmission/reflection of charge and conserved spin current is a consequence of reflection symmetry. Finally, we provide a quasiclassical picture of charge and spin transport by imaging flow lines over the entire sample and Veselago lensing (negative refraction).
Interface driven states in ferromagnetic topological insulator heterostructures
NASA Astrophysics Data System (ADS)
Lauter, Valeria; Katmis, Ferhat; Moodera, Jagadeesh
The broken time reversal symmetry (TRS) states can be introduced into a topological insulator (TI) material by ferromagnetic ordering at the interface. Recently we demonstrated a fundamental step towards realization of high temperature magnetization in Bi2Se3-EuS TI-FMI heterostructures through observation of magnetic proximity-induced symmetry breaking on the Bi2Se3 surface via the exchange interaction by depositing EuS film on the top of the Bi2Se3 surface.Here we show that we can independently break the TRS on both surfaces of a TI, which brings the long-range induced magnetism on either or both surfaces of a TI in a controlled way. We provide a depth-sensitive data on details of magnetic proximity effect in hidden interfaces by Polarized Neutron Reflectometry. The proximity coupling strength and penetration depth of magnetism into TI are extracted as functions of temperature, magnetic field and magnetic history. The large neutron absorption of Eu atoms serves as the element sensitivity and enables us to identify such magnetism in TI as proximity magnetism. This provides a next step to realization of complex heterostructures of TI and FMI leading to wide applications in TI-based next generation spintronic devices. Supported by U.S. DOE, Office of Science, BES, MIT MRSEC award DMR-0819762, NSF Grant DMR-1207469, ONR Grant N00014-13-1-0301, NSF Grant DMR-1231319.
Nonlinear magnetic dynamics in a nanomagnet-topological insulator heterostructure
NASA Astrophysics Data System (ADS)
Duan, Xiaopeng; Li, Xi-Lai; Semenov, Yuriy G.; Kim, Ki Wook
2015-09-01
Magnetization dynamics of a nanomagnet, when strongly coupled with a topological insulator (TI) via the proximity interaction, is examined theoretically in the presence of electrical current on the TI surface under realistic transport conditions. Due to the spin-momentum interlock, the magnetic state and TI electron transport depend significantly on each other. Such an interdependence leads to a variety of nonlinear dynamical responses in all transport regimes including the scattering dominant diffusive cases. Generation of the anomalous Hall current, in particular, is found to be a key to the unique features that have not been observed previously. For instance, the anomalous Hall current can result in antiparallel alignment of the final magnetization state in reference to the effective driving magnetic field by inducing an extra term that counters the damping effect. Similarly the calculation also reveals steady oscillation of the magnetization under a broad range of conditions, offering a robust mechanism for highly efficient magnetization reversal and/or spin wave excitation under a dc bias.
Transport on the surface of a topological insulator
Vargiamidis, V.; Vasilopoulos, P.
2014-08-14
We study theoretically dc and ac transport on the surface of a three-dimensional topological insulator when its time-reversal symmetry is broken. Starting with a Kubo formula, we derive an explicit expression for the dc Hall conductivity, valid for finite temperatures. At zero temperature this expression gives the dc half-quantum Hall conductivity, provided the Fermi level lies in the gap. Corrections when the Fermi level is outside the gap and scattering by impurities are quantified. The longitudinal conductivity is also examined. At finite frequencies, we find a modified Drude term in σ{sub xx}(ω) and logarithmic, frequency-dependent corrections in σ{sub yx}(ω). The ac Hall conductivity exhibits a robust logarithmic singularity for excitation energies equal to the gapwidth. For these energies, we also find that the power spectrum, which is pertinent to optical experiments, exhibits drastic increase. The Hall conductivity remains almost unaffected for temperatures up to approximately 300 K.
Visualization of superparamagnetic dynamics in magnetic topological insulators.
Lachman, Ella O; Young, Andrea F; Richardella, Anthony; Cuppens, Jo; Naren, H R; Anahory, Yonathan; Meltzer, Alexander Y; Kandala, Abhinav; Kempinger, Susan; Myasoedov, Yuri; Huber, Martin E; Samarth, Nitin; Zeldov, Eli
2015-11-01
Quantized Hall conductance is a generic feature of two-dimensional electronic systems with broken time reversal symmetry. In the quantum anomalous Hall state recently discovered in magnetic topological insulators, time reversal symmetry is believed to be broken by long-range ferromagnetic order, with quantized resistance observed even at zero external magnetic field. We use scanning nanoSQUID (nano-superconducting quantum interference device) magnetic imaging to provide a direct visualization of the dynamics of the quantum phase transition between the two anomalous Hall plateaus in a Cr-doped (Bi,Sb)2Te3 thin film. Contrary to naive expectations based on macroscopic magnetometry, our measurements reveal a superparamagnetic state formed by weakly interacting magnetic domains with a characteristic size of a few tens of nanometers. The magnetic phase transition occurs through random reversals of these local moments, which drive the electronic Hall plateau transition. Surprisingly, we find that the electronic system can, in turn, drive the dynamics of the magnetic system, revealing a subtle interplay between the two coupled quantum phase transitions. PMID:26601138
Nanoscale Andreev Reflection Spectroscopy on Bismuth-Chalcogenide Topological Insulators
NASA Astrophysics Data System (ADS)
Granstrom, C. R.; Fridman, I.; Liang, R. X.; Lei, H.; Petrovic, C.; Yang, Shuo; Wu, K. H.; Wei, J. Y. T.
Andreev reflection (AR) is the basic mechanism underlying the superconducting proximity effect which, at the interface between a topological insulator (TI) and a spin-singlet superconductor, can induce chiral p-wave pairing in the TI. Despite this novel importance, it is not well understood how AR is affected by the unique attributes of a three-dimensional TI, namely the Dirac dispersion and helical spin-polarization of its surface states. In this work, we use both s-wave and d-wave superconducting tips to perform AR spectroscopy at 4.2 K on flux-grown Bi2Se3 and Bi2Te3 single crystals, as well as epitaxial Bi2Se3 thin films grown on SrTiO3 substrates by molecular beam epitaxy. These AR measurements are complemented by scanning tunneling spectroscopy, in order to characterize the superconducting tip as well as the doping level and surface condition of the TI sample. Our data are analyzed using BTK theory, in light of the characteristic band structure of bismuth chalcogenides, to elucidate how the band structure affects the AR process. Work supported by: NSERC, CFI-OIT, the Canadian Institute for Advanced Research, and the Department of Energy.
Phase coherence and Andreev reflection in topological insulator devices
Finck, A. D. K.; Kurter, C.; Hor, Y. S.; Van Harlingen, D. J.
2014-11-04
Topological insulators (TIs) have attracted immense interest because they host helical surface states. Protected by time-reversal symmetry, they are robust to nonmagnetic disorder. When superconductivity is induced in these helical states, they are predicted to emulate p-wave pairing symmetry, with Majorana states bound to vortices. Majorana bound states possess non-Abelian exchange statistics that can be probed through interferometry. Here, we take a significant step towards Majorana interferometry by observing pronounced Fabry-Pérot oscillations in a TI sandwiched between a superconducting and a normal lead. For energies below the superconducting gap, we observe a doubling in the frequency of the oscillations, arisingmore » from an additional phase from Andreev reflection. When a magnetic field is applied perpendicular to the TI surface, a number of very sharp and gate-tunable conductance peaks appear at or near zero energy, which has consequences for interpreting spectroscopic probes of Majorana fermions. Our results show that TIs are a promising platform for exploring phase-coherent transport in a solid-state system.« less
Phase coherence and Andreev reflection in topological insulator devices
Finck, A. D. K.; Kurter, C.; Hor, Y. S.; Van Harlingen, D. J.
2014-11-04
Topological insulators (TIs) have attracted immense interest because they host helical surface states. Protected by time-reversal symmetry, they are robust to nonmagnetic disorder. When superconductivity is induced in these helical states, they are predicted to emulate p-wave pairing symmetry, with Majorana states bound to vortices. Majorana bound states possess non-Abelian exchange statistics that can be probed through interferometry. Here, we take a significant step towards Majorana interferometry by observing pronounced Fabry-Pérot oscillations in a TI sandwiched between a superconducting and a normal lead. For energies below the superconducting gap, we observe a doubling in the frequency of the oscillations, arising from an additional phase from Andreev reflection. When a magnetic field is applied perpendicular to the TI surface, a number of very sharp and gate-tunable conductance peaks appear at or near zero energy, which has consequences for interpreting spectroscopic probes of Majorana fermions. Our results show that TIs are a promising platform for exploring phase-coherent transport in a solid-state system.
Transport in selectively magnetically doped topological insulator wires
NASA Astrophysics Data System (ADS)
Acero, Sergio; Brey, Luis; Herrera, William J.; Yeyati, Alfredo Levy
2015-12-01
We study the electronic and transport properties of a topological insulator nanowire including selective magnetic doping of its surfaces. We use a model which is appropriate to describe materials like Bi2Se3 within a k .p approximation and consider nanowires with a rectangular geometry. Within this model the magnetic doping at the (111) surfaces induces a Zeeman field which opens a gap at the Dirac cones corresponding to the surface states. For obtaining the transport properties in a two terminal configuration we use a recursive Green's function method based on a tight-binding model which is obtained by discretizing the original continuous model. For the case of uniform magnetization of two opposite nanowire (111) surfaces we show that the conductance can switch from a quantized value of e2/h (when the magnetizations are equal) to a very small value (when they are opposite). We also analyze the case of nonuniform magnetizations in which the Zeeman field on the two opposite surfaces change sign at the middle of the wire. For this case we find that conduction by resonant tunneling through a chiral state bound at the middle of the wire is possible. The resonant level position can be tuned by imposing an Aharonov-Bohm flux through the nanowire cross section.
Tight-binding theory of NMR shifts in topological insulators
NASA Astrophysics Data System (ADS)
Garate, Ion; Boutin, Samuel; Ramirez Ruiz, Jorge
To date, most experiments in topological insulators have focused on probing the surface states of these materials and suppressing the often inevitable contribution from bulk states. However, the latter are of interest on their own and contain useful information that can be extracted with a local probe like nuclear magnetic resonance (NMR). Recently, 77Se NMR experiments on Bi2Se3 single crystals have reported unusual field-independent linewidths and short spin-echo decays. It is likely that an unexpectedly strong indirect internuclear coupling, characteristic of some inverted band structures, is the cause of these peculiar results. Motivated by this hypothesis, we report on a microscopic theory of NMR shifts and linewidths in Bi2Se3 and Bi2Te3. Our theory provides quantitative estimates for the Knight shift, the orbital shift, the Ruderman-Kittel-Kasuya-Yoshida coupling and the Bloembergen-Rowland coupling. We will compare our findings with the available experimental data Funded by the National Science and Engineering Research Council of Canada, Fonds de Recherche Québécois Nature et Technologies, and Mitacs-Globalink.
Phase Coherence and Andreev Reflection in Topological Insulator Devices
NASA Astrophysics Data System (ADS)
Finck, A. D. K.; Kurter, C.; Hor, Y. S.; Van Harlingen, D. J.
2014-10-01
Topological insulators (TIs) have attracted immense interest because they host helical surface states. Protected by time-reversal symmetry, they are robust to nonmagnetic disorder. When superconductivity is induced in these helical states, they are predicted to emulate p -wave pairing symmetry, with Majorana states bound to vortices. Majorana bound states possess non-Abelian exchange statistics that can be probed through interferometry. Here, we take a significant step towards Majorana interferometry by observing pronounced Fabry-Pérot oscillations in a TI sandwiched between a superconducting and a normal lead. For energies below the superconducting gap, we observe a doubling in the frequency of the oscillations, arising from an additional phase from Andreev reflection. When a magnetic field is applied perpendicular to the TI surface, a number of very sharp and gate-tunable conductance peaks appear at or near zero energy, which has consequences for interpreting spectroscopic probes of Majorana fermions. Our results demonstrate that TIs are a promising platform for exploring phase-coherent transport in a solid-state system.
Giant topological insulator gap and Rashba splitting in honeycomb Pb
NASA Astrophysics Data System (ADS)
He, Haiyan; Hu, Jun; Wu, Ruqian; Ruqian Wu's Group Team
2014-03-01
It was predicted that graphene can be a topological insulator (TI) due to its special Dirac states and spin-orbit coupling (SOC). However, the SOC gap of pure graphene is too small for experimental observation. It was found that heavier group IV elements, such as Si and Ge, can also produce the TI state in the tow-dimensional honeycomb lattice, with their SOC gaps a few orders larger than that of graphene. In the present work, we find that the honeycomb Pb is also a TI, with a SOC gap as large as 250 meV. We demonstrate the feasibility of making a honeycomb Pb monolayer on the Al2O3(0001) substrate. Moreover, Pb/Al2O3(0001) has a giant Rashba splitting of 270 meV, useful for spintronics and topotronics applications. This work was supported by DOE-BES(Grant No: DE-FG02-05ER46237) and by NERSC for computing time.
Visualization of superparamagnetic dynamics in magnetic topological insulators
Lachman, Ella O.; Young, Andrea F.; Richardella, Anthony; Cuppens, Jo; Naren, H. R.; Anahory, Yonathan; Meltzer, Alexander Y.; Kandala, Abhinav; Kempinger, Susan; Myasoedov, Yuri; Huber, Martin E.; Samarth, Nitin; Zeldov, Eli
2015-01-01
Quantized Hall conductance is a generic feature of two-dimensional electronic systems with broken time reversal symmetry. In the quantum anomalous Hall state recently discovered in magnetic topological insulators, time reversal symmetry is believed to be broken by long-range ferromagnetic order, with quantized resistance observed even at zero external magnetic field. We use scanning nanoSQUID (nano–superconducting quantum interference device) magnetic imaging to provide a direct visualization of the dynamics of the quantum phase transition between the two anomalous Hall plateaus in a Cr-doped (Bi,Sb)2Te3 thin film. Contrary to naive expectations based on macroscopic magnetometry, our measurements reveal a superparamagnetic state formed by weakly interacting magnetic domains with a characteristic size of a few tens of nanometers. The magnetic phase transition occurs through random reversals of these local moments, which drive the electronic Hall plateau transition. Surprisingly, we find that the electronic system can, in turn, drive the dynamics of the magnetic system, revealing a subtle interplay between the two coupled quantum phase transitions. PMID:26601138
Li, Mingda; Zhu, Yimei; Chang, Cui -Zu; Kirby, B. J.; Jamer, Michelle E.; Cui, Wenping; Wu, Lijun; Wei, Peng; Heiman, Don; Li, Ju; et al
2015-08-17
Magnetic exchange driven proximity effect at a magnetic-insulator–topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. In this study, we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS/Sb2–xVxTe3 hybrid heterostructure, where V doping is used to drive the TI (Sb2Te3) magnetic. We observe an artificial antiferromagneticlike structure near the MI-TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magnetic ordering.
Li, Mingda; Zhu, Yimei; Chang, Cui -Zu; Kirby, B. J.; Jamer, Michelle E.; Cui, Wenping; Wu, Lijun; Wei, Peng; Heiman, Don; Li, Ju; Moodera, Jagadeesh S.; Katmis, Ferhat
2015-08-17
Magnetic exchange driven proximity effect at a magnetic-insulator–topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. In this study, we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS/Sb_{2–x}V_{x}Te_{3} hybrid heterostructure, where V doping is used to drive the TI (Sb_{2}Te_{3}) magnetic. We observe an artificial antiferromagneticlike structure near the MI-TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magnetic ordering.
NASA Astrophysics Data System (ADS)
Poon, Kelvin; Hamarneh, Ghassan; Abugharbieh, Rafeef
2007-03-01
Segmentation of 3D data is one of the most challenging tasks in medical image analysis. While reliable automatic methods are typically preferred, their success is often hindered by poor image quality and significant variations in anatomy. Recent years have thus seen an increasing interest in the development of semi-automated segmentation methods that combine computational tools with intuitive, minimal user interaction. In an earlier work, we introduced a highly-automated technique for medical image segmentation, where a 3D extension of the traditional 2D Livewire was proposed. In this paper, we present an enhanced and more powerful 3D Livewire-based segmentation approach with new features designed to primarily enable the handling of complex object topologies that are common in biological structures. The point ordering algorithm we proposed earlier, which automatically pairs up seedpoints in 3D, is improved in this work such that multiple sets of points are allowed to simultaneously exist. Point sets can now be automatically merged and split to accommodate for the presence of concavities, protrusions, and non-spherical topologies. The robustness of the method is further improved by extending the 'turtle algorithm', presented earlier, by using a turtle-path pruning step. Tests on both synthetic and real medical images demonstrate the efficiency, reproducibility, accuracy, and robustness of the proposed approach. Among the examples illustrated is the segmentation of the left and right ventricles from a T1-weighted MRI scan, where an average task time reduction of 84.7% was achieved when compared to a user performing 2D Livewire segmentation on every slice.
Density and level set-XFEM schemes for topology optimization of 3-D structures
NASA Astrophysics Data System (ADS)
Villanueva, Carlos H.; Maute, Kurt
2014-07-01
As the capabilities of additive manufacturing techniques increase, topology optimization provides a promising approach to design geometrically sophisticated structures. Traditional topology optimization methods aim at finding conceptual designs, but they often do not resolve sufficiently the geometry and the structural response such that the optimized designs can be directly used for manufacturing. To overcome these limitations, this paper studies the viability of the extended finite element method (XFEM) in combination with the level-set method (LSM) for topology optimization of three dimensional structures. The LSM describes the geometry by defining the nodal level set values via explicit functions of the optimization variables. The structural response is predicted by a generalized version of the XFEM. The LSM-XFEM approach is compared against results from a traditional Solid Isotropic Material with Penalization method for two-phase "solid-void" and "solid-solid" problems. The numerical results demonstrate that the LSM-XFEM approach describes crisply the geometry and predicts the structural response with acceptable accuracy even on coarse meshes.
Zheng, Guolin; Wang, Ning; Yang, Jiyong; Wang, Weike; Du, Haifeng; Ning, Wei; Yang, Zhaorong; Lu, Hai-Zhou; Zhang, Yuheng; Tian, Mingliang
2016-01-01
Many exotic physics anticipated in topological insulators require a gap to be opened for their topological surface states by breaking time reversal symmetry. The gap opening has been achieved by doping magnetic impurities, which however inevitably create extra carriers and disorder that undermine the electronic transport. In contrast, the proximity to a ferromagnetic/ferrimagnetic insulator may improve the device quality, thus promises a better way to open the gap while minimizing the side-effects. Here, we grow thin single-crystal Sb1.9Bi0.1Te3 micro flakes on insulating ferrimagnet BaFe12O19 by using the van der Waals epitaxy technique. The micro flakes show a negative magnetoresistance in weak perpendicular fields below 50 K, which can be quenched by increasing temperature. The signature implies the weak localization effect as its origin, which is absent in intrinsic topological insulators, unless a surface state gap is opened. The surface state gap is estimated to be 10 meV by using the theory of the gap-induced weak localization effect. These results indicate that the magnetic proximity effect may open the gap for the topological surface attached to BaM insulating ferrimagnet. This heterostructure may pave the way for the realization of new physical effects as well as the potential applications of spintronics devices. PMID:26891682
NASA Astrophysics Data System (ADS)
Zheng, Guolin; Wang, Ning; Yang, Jiyong; Wang, Weike; Du, Haifeng; Ning, Wei; Yang, Zhaorong; Lu, Hai-Zhou; Zhang, Yuheng; Tian, Mingliang
2016-02-01
Many exotic physics anticipated in topological insulators require a gap to be opened for their topological surface states by breaking time reversal symmetry. The gap opening has been achieved by doping magnetic impurities, which however inevitably create extra carriers and disorder that undermine the electronic transport. In contrast, the proximity to a ferromagnetic/ferrimagnetic insulator may improve the device quality, thus promises a better way to open the gap while minimizing the side-effects. Here, we grow thin single-crystal Sb1.9Bi0.1Te3 micro flakes on insulating ferrimagnet BaFe12O19 by using the van der Waals epitaxy technique. The micro flakes show a negative magnetoresistance in weak perpendicular fields below 50 K, which can be quenched by increasing temperature. The signature implies the weak localization effect as its origin, which is absent in intrinsic topological insulators, unless a surface state gap is opened. The surface state gap is estimated to be 10 meV by using the theory of the gap-induced weak localization effect. These results indicate that the magnetic proximity effect may open the gap for the topological surface attached to BaM insulating ferrimagnet. This heterostructure may pave the way for the realization of new physical effects as well as the potential applications of spintronics devices.
Zheng, Guolin; Wang, Ning; Yang, Jiyong; Wang, Weike; Du, Haifeng; Ning, Wei; Yang, Zhaorong; Lu, Hai-Zhou; Zhang, Yuheng; Tian, Mingliang
2016-02-19
Many exotic physics anticipated in topological insulators require a gap to be opened for their topological surface states by breaking time reversal symmetry. The gap opening has been achieved by doping magnetic impurities, which however inevitably create extra carriers and disorder that undermine the electronic transport. In contrast, the proximity to a ferromagnetic/ferrimagnetic insulator may improve the device quality, thus promises a better way to open the gap while minimizing the side-effects. Here, we grow thin single-crystal Sb1.9Bi0.1Te3 micro flakes on insulating ferrimagnet BaFe12O19 by using the van der Waals epitaxy technique. The micro flakes show a negative magnetoresistance in weak perpendicular fields below 50 K, which can be quenched by increasing temperature. The signature implies the weak localization effect as its origin, which is absent in intrinsic topological insulators, unless a surface state gap is opened. The surface state gap is estimated to be 10 meV by using the theory of the gap-induced weak localization effect. These results indicate that the magnetic proximity effect may open the gap for the topological surface attached to BaM insulating ferrimagnet. This heterostructure may pave the way for the realization of new physical effects as well as the potential applications of spintronics devices.
NASA Astrophysics Data System (ADS)
Lauter, Valeria; Katmis, Ferhat; Assaf, Badih; Heiman, Don; Moodera, Jagadeesh
2015-03-01
We examine the magnetic proximity-induced symmetry breaking via the exchange interaction in heterostructures of the topological insulator (TI) Bi2Se3 and the ferromagnetic insulator (FMI) EuS. We observed the emergence of a ferromagnetic phase in TI with the excess of magnetic moment at the interface using depth and element sensitive Polarized Neutron Reflectometry (PNR). We find that the magnetization, penetrating into the TI originates through exchange interaction, without structural perturbation at the interface. Due to the different interlayer exchange coupling as well as the properties of the bulk and surface magnetizations, we investigated several different heterostructures after cooling in zero field (ZFC) and in an external magnetic field (FC). The significantly enhanced magnetic properties of the heterostructures as revealed by the PNR studies, as well as the temperature and external magnetic field dependence will be presented. This work was supported by the Scientific User Facilities Division, BES, DOE, NSF ECCS-1402738, DMR-1207469, ONR N00014-13-1-0301.
Large anomalous Hall effect in ferromagnetic insulator-topological insulator heterostructures
Alegria, L. D.; Petta, J. R.; Ji, H.; Cava, R. J.; Yao, N.; Clarke, J. J.
2014-08-04
We demonstrate the van der Waals epitaxy of the topological insulator compound Bi{sub 2}Te{sub 3} on the ferromagnetic insulator Cr{sub 2}Ge{sub 2}Te{sub 6}. The layers are oriented with (001)Bi{sub 2}Te{sub 3}||(001)Cr{sub 2}Ge{sub 2}Te{sub 6} and (110)Bi{sub 2}Te{sub 3}||(100)Cr{sub 2}Ge{sub 2}Te{sub 6}. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi{sub 2}Te{sub 3} on Cr{sub 2}Ge{sub 2}Te{sub 6} exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization measurements in bulk Cr{sub 2}Ge{sub 2}Te{sub 6}. The 61 K Curie temperature of Cr{sub 2}Ge{sub 2}Te{sub 6} and the use of near-stoichiometric materials may lead to the development of spintronic devices based on the AHE.
Probing the Spin Transfer Efficiency at Topological Insulator/Ferromagnetic Insulator Interfaces
NASA Astrophysics Data System (ADS)
Wang, Hailong; Kally, James; Lee, Joon Sue; Richardella, Anthony; Kempinger, Susan; Pan, Yu; Kamp, Eric; Samarth, Nitin; Liu, Tao; Chang, Houcheng; Wu, Mingzhong; Reifsnyder-Hickey, Danielle; Mkhoyan, Andre
The development of next-generation spintronics devices has driven extensive studies of spin-charge conversion through measurement of the inverse spin Hall effect (ISHE) and ferromagnetic resonance (FMR) driven spin pumping of pure spin currents in ferromagnet/non-magnet bilayers. Topological insulators (TIs) such as the Bi-chalcogenides are naturally relevant in this context because the inherent spin-momentum ``locking'' in their surface states promises very efficient spin-charge conversion, although the first experimental studies have involved ferromagnetic metals that provide a shunting current path [e.g. Nature, 511,449 (2014)]. To circumvent the current shunting problem, we are growing and characterizing bilayers of TIs and the ferrimagnetic insulator Y3Fe5O12 (YIG). Here, we report measurements of FMR-driven spin pumping in TI/YIG bilayers, showing robust spin pumping signals at room temperature. Analysis of the ISHE voltages and FMR linewidth broadening show that, as in other studies of spin pumping into TIs [Nano Lett., 15 (10) (2015)], the interface condition presents a critical challenge for enhancing the spin conversion efficiency in these devices. Funded by C-SPIN/SRC/DARPA and ONR.
NASA Astrophysics Data System (ADS)
Liu, Wenqing; He, Liang; Zhou, Yan; Murata, Koichi; Onbasli, Mehmet C.; Ross, Caroline A.; Jiang, Ying; Wang, Yong; Xu, Yongbing; Zhang, Rong; Wang, Kang. L.
2016-05-01
One of the major obstacles of the magnetic topological insulators (TIs) impeding their practical use is the low Curie temperature (Tc). Very recently, we have demonstrated the enhancement of the magnetic ordering in Cr-doped Bi2Se3 by means of proximity to the high-Tc ferrimagnetic insulator (FMI) Y3Fe5O12 and found a large and rapidly decreasing penetration depth of the proximity effect, suggestive of a different carrier propagation process near the TI surface. Here we further present a study of the interfacial magnetic interaction of this TI/FMI heterostrucutre. The synchrotron-based X-ray magnetic circular dichroism (XMCD) technique was used to probe the nature of the exchange coupling of the Bi2-xCrxSe3/Y3Fe5O12 interface. We found that the Bi2-xCrxSe3 grown on Y3Fe5O12(111) predominately contains Cr3+ cations, and the spin direction of the Cr3+ is aligned parallel to that of tetrahedral Fe3+ of the YIG, revealing a ferromagnetic exchange coupling between the Bi2-xCrxSe3 and the Y3Fe5O12.
NASA Astrophysics Data System (ADS)
Jiang, Zilong; Chang, Cui-Zu; Tang, Chi; Zheng, Jian-Guo; Moodera, Jagadeesh S.; Shi, Jing
2016-05-01
The spontaneously broken time reversal symmetry can lead to the formation of an energy gap in the Dirac spectrum of the surface states of a topological insulator (TI) which can consequently give rise to a variety of interesting phenomena potentially useful for spintronics. In this work, we couple a non-magnetic TI to a high Curie temperature TC magnetic insulator to induce strong exchange interaction via the proximity effect. We have successfully grown 5 quintuple layer thick ternary TI (BixSb1-x)2Te3 films on atomically flat yttrium iron garnet (YIG) film with the combination of molecular beam epitaxy and pulsed laser deposition, in which the Fermi level position relative to the Dirac point is varied by controlling the Bi:Sb ratio. The anomalous Hall effect (AHE) and suppressed weak antilocalization (WAL) measured under out of plane magnetic fields reveal that the TI surface in contact with YIG is magnetized. Our high-quality (BixSb1-x)2Te3/Y IG heterostructure provides a tunable system for exploring the quantum anomalous Hall effect (QAHE) at higher temperatures in TI-based spintronic devices.
Direct observation of the spin texture in SmB6 as evidence of the topological Kondo insulator.
Xu, N; Biswas, P K; Dil, J H; Dhaka, R S; Landolt, G; Muff, S; Matt, C E; Shi, X; Plumb, N C; Radović, M; Pomjakushina, E; Conder, K; Amato, A; Borisenko, S V; Yu, R; Weng, H-M; Fang, Z; Dai, X; Mesot, J; Ding, H; Shi, M
2014-07-30
Topological Kondo insulators have been proposed as a new class of topological insulators in which non-trivial surface states reside in the bulk Kondo band gap at low temperature due to strong spin-orbit coupling. In contrast to other three-dimensional topological insulators, a topological Kondo insulator is truly bulk insulating. Furthermore, strong electron correlations are present in the system, which may interact with the novel topological phase. By applying spin- and angle-resolved photoemission spectroscopy, here we show that the surface states of SmB6 are spin polarized. The spin is locked to the crystal momentum, fulfilling time reversal and crystal symmetries. Our results provide strong evidence that SmB6 can host topological surface states in a bulk insulating gap stemming from the Kondo effect, which can serve as an ideal platform for investigating of the interplay between novel topological quantum states with emergent effects and competing orders induced by strongly correlated electrons.
NASA Astrophysics Data System (ADS)
Isobe, Hiroki; Fu, Liang
2015-03-01
The effects of electron-electron interaction in edge states of mirror-symmetry protected topological crystalline insulators (TCI's) are discussed. The analysis is performed by using bosonized Hamiltonian following the Tomonaga-Luttinger liquid theory. When two pairs of helical edge states exist, electron-electron interaction could gap out one edge mode, which is a possible realization of interacting symmetry-protected topological (SPT) phases. This type of SPT phase is closely related to a Luther-Emery liquid in spinful 1D system. We also propose a method of detecting the SPT phases by STM. The other focus of the study is the classification of SPT phases in mirror-symmetry protected TCI's. By adopting the Chern-Simons theory, we find that electron-electron interaction reduces the classification from Z to Z4. It means that the edge states can be gapped out when four pairs of edge states exist. In other cases, the edge modes cannot be fully gapped. Each of these states corresponds to a different SPT phase depending on the relevant interaction process.
Disorder Effects on Electron Transport in Nanocrystal Assemblies and Topological Insulators
NASA Astrophysics Data System (ADS)
Chen, Tianran
The continuing development of new energy technologies for electronic devices and medical applications necessitates the search for advanced nanomaterials. Among the more promising candidates are two novel materials: nanocrystal (NC) assemblies and three-dimensional (3D) topological insulators (TIs). The former have great promise for optoelectronic and photovoltaic devices, while the latter can be applied in spintronics and quantum computing. Thus far, however, the development of NC- and TI-based devices have been slowed by a lack of a solid theoretical understanding of many of their electronic properties, in particular, the influence of the presence of disorder on charge transport. In this thesis we propose to help address this need by performing a detailed, theoretical analysis of the disorder effects on electronic transport properties of NC arrays and TIs. NC assemblies can be made from different materials. Specifically, we consider three types of systems: semiconductor NCs, metallic NCs and superconducting grains. As-grown semiconductor NCs are insulators, and in order for them to be useful in photovoltaic devices, their electrical conductivity must be tuned by doping. Recent experiments have shown that the resistivity of a dense crystalline array of semiconductor NCs depends in a sensitive way on the level of doping as well as on the NC size and spacing. We show that in sufficiently small NCs, the fluctuations in donor number from one NC to another provide disorder that helps to determine the conduction mechanism in the array. Using this model, we explain how the different regimes of resistivity observed in experiment arise based on the interplay between the charging spectrum of NCs, the long-ranged Coulomb interactions between charged NCs, and the discrete quantum energy levels of confined electrons. We supplement our theory with a computer simulation, which we use to calculate the single particle density of states (DOS) and the resistivity. Compared to
NASA Astrophysics Data System (ADS)
Grusdt, Fabian; Abanin, Dmitry; Demler, Eugene
2013-05-01
Recently experiments with ultracold atoms started to explore topological phases in 1D optical lattices. While transport measurements are challenging in these systems, ways to directly measure topological quantum numbers using a combination of Bloch oscillations and Ramsey interferometry have been explored (Atala et al., arXiv:1212.0572). In this talk I will present ways to measure the Z2 topological quantum numbers of two and three dimensional time-reversal invariant (TR) topological insulators. In this case non-Abelian Bloch oscillations can be combined with Ramsey interferometry to map out the topological properties of a given band-structure. Our method is very general and works even in the presence of accidental degeneracies. The applicability of the scheme is discussed for different theoretically proposed implementations of TR topological insulators using ultracold atoms. F. G. is grateful to Harvard University for hospitality and acknowledges financial support from Graduate School Materials Science in Mainz (MAINZ).
Probe of three-dimensional chiral topological insulators in an optical lattice.
Wang, S-T; Deng, D-L; Duan, L-M
2014-07-18
We propose a feasible experimental scheme to realize a three-dimensional chiral topological insulator with cold fermionic atoms in an optical lattice, which is characterized by an integer topological invariant distinct from the conventional Z(2) topological insulators and has a remarkable macroscopic zero-energy flat band. To probe its property, we show that its characteristic surface states--the Dirac cones--can be probed through time-of-flight imaging or Bragg spectroscopy and the flat band can be detected via measurement of the atomic density profile in a weak global trap. The realization of this novel topological phase with a flat band in an optical lattice will provide a unique experimental platform to study the interplay between interaction and topology and open new avenues for application of topological states.
NASA Astrophysics Data System (ADS)
Kumar, Raj
confirmed by the cos(theta) dependence of field titled MR measurements on the Bi2Se3 thin films. No switching in the AMR or hysteresis behavior in the MR was observed in control experiments performed on non TI materials with superconducting electrodes and metal electrodes on Bi2Se3 TI films. The growth and characterization of Bi2Se3/Bi 2Se3/La0.70Sr0.30MnO3 (TI/FM), a topological insulator/ferromagnet heterostructure is discussed in the last part of the thesis. We have grown Bi2Se3/Bi2Se 3/La0.70Sr0.30MnO3 (TI/FM) heterostructures by the method of pulsed laser deposition. Bi2Se3/La 0.70Sr0.30MnO3 (LSMO) is a strong ferromagnetic material with Tc ˜ 350 K and Bi2Se3 is the most studied topological insulator. XRD and phi scan measurements of Bi2Se3/La 0.70Sr0.30MnO3 (TI/FM) heterostructure showed that epitaxial thin films of Bi2Se3 were grown on the LSMO template. Strong in-plane magnetization was confirmed by magnetometry measurements of the Bi2Se3/LSMO heterostructure. Magnetotransport measurements showed a distorted weak anti-localization effect with hysteretic behavior due to interface induced ferromagnetism in the Bi2Se 3 TI films.
Peyrin, Francoise; Attali, Dominique; Chappard, Christine; Benhamou, Claude Laurent
2010-08-15
Purpose: Trabecular bone microarchitecture is made of a complex network of plate and rod structures evolving with age and disease. The purpose of this article is to propose a new 3D local analysis method for the quantitative assessment of parameters related to the geometry of trabecular bone microarchitecture. Methods: The method is based on the topologic classification of the medial axis of the 3D image into branches, rods, and plates. Thanks to the reversibility of the medial axis, the classification is next extended to the whole 3D image. Finally, the percentages of rods and plates as well as their mean thicknesses are calculated. The method was applied both to simulated test images and 3D micro-CT images of human trabecular bone. Results: The classification of simulated phantoms made of plates and rods shows that the maximum error in the quantitative percentages of plate and rods is less than 6% and smaller than with the structure model index (SMI). Micro-CT images of human femoral bone taken in osteoporosis and early or advanced osteoarthritis were analyzed. Despite the large physiological variability, the present method avoids the underestimation of rods observed with other local methods. The relative percentages of rods and plates were not significantly different between osteoarthritis and osteoporotic groups, whereas their absolute percentages were in relation to an increase of rod and plate thicknesses in advanced osteoarthritis with also higher relative and absolute number of nodes. Conclusions: The proposed method is model-independent, robust to surface irregularities, and enables geometrical characterization of not only skeletal structures but entire 3D images. Its application provided more accurate results than the standard SMI on simple simulated phantoms, but the discrepancy observed on the advanced osteoarthritis group raises questions that will require further investigations. The systematic use of such a local method in the characterization of
Rasche, Bertold; Isaeva, Anna; Ruck, Michael; Koepernik, Klaus; Richter, Manuel; van den Brink, Jeroen
2016-01-01
Recently the presence of topologically protected edge-states in Bi14Rh3I9 was confirmed by scanning tunnelling microscopy consolidating this compound as a weak 3D topological insulator (TI). Here, we present a density-functional-theory-based study on a family of TIs derived from the Bi14Rh3I9 parent structure via substitution of Ru, Pd, Os, Ir and Pt for Rh. Comparative analysis of the band-structures throughout the entire series is done by means of a unified minimalistic tight-binding model that evinces strong similarity between the quantum-spin-Hall (QSH) layer in Bi14Rh3I9 and graphene in terms of -molecular orbitals. Topologically non-trivial energy gaps are found for the Ir-, Rh-, Pt- and Pd-based systems, whereas the Os- and Ru-systems remain trivial. Furthermore, the energy position of the metal -band centre is identified as the parameter which governs the evolution of the topological character of the band structure through the whole family of TIs. The -band position is shown to correlate with the chemical bonding within the QSH layers, thus revealing how the chemical nature of the constituents affects the topological band character. PMID:26875525
NASA Astrophysics Data System (ADS)
Rasche, Bertold; Isaeva, Anna; Ruck, Michael; Koepernik, Klaus; Richter, Manuel; van den Brink, Jeroen
2016-02-01
Recently the presence of topologically protected edge-states in Bi14Rh3I9 was confirmed by scanning tunnelling microscopy consolidating this compound as a weak 3D topological insulator (TI). Here, we present a density-functional-theory-based study on a family of TIs derived from the Bi14Rh3I9 parent structure via substitution of Ru, Pd, Os, Ir and Pt for Rh. Comparative analysis of the band-structures throughout the entire series is done by means of a unified minimalistic tight-binding model that evinces strong similarity between the quantum-spin-Hall (QSH) layer in Bi14Rh3I9 and graphene in terms of -molecular orbitals. Topologically non-trivial energy gaps are found for the Ir-, Rh-, Pt- and Pd-based systems, whereas the Os- and Ru-systems remain trivial. Furthermore, the energy position of the metal -band centre is identified as the parameter which governs the evolution of the topological character of the band structure through the whole family of TIs. The -band position is shown to correlate with the chemical bonding within the QSH layers, thus revealing how the chemical nature of the constituents affects the topological band character.
Rasche, Bertold; Isaeva, Anna; Ruck, Michael; Koepernik, Klaus; Richter, Manuel; van den Brink, Jeroen
2016-02-15
Recently the presence of topologically protected edge-states in Bi14Rh3I9 was confirmed by scanning tunnelling microscopy consolidating this compound as a weak 3D topological insulator (TI). Here, we present a density-functional-theory-based study on a family of TIs derived from the Bi14Rh3I9 parent structure via substitution of Ru, Pd, Os, Ir and Pt for Rh. Comparative analysis of the band-structures throughout the entire series is done by means of a unified minimalistic tight-binding model that evinces strong similarity between the quantum-spin-Hall (QSH) layer in Bi14Rh3I9 and graphene in terms of Pz-molecular orbitals. Topologically non-trivial energy gaps are found for the Ir-, Rh-, Pt- and Pd-based systems, whereas the Os- and Ru-systems remain trivial. Furthermore, the energy position of the metal d-band centre is identified as the parameter which governs the evolution of the topological character of the band structure through the whole family of TIs. The d-band position is shown to correlate with the chemical bonding within the QSH layers, thus revealing how the chemical nature of the constituents affects the topological band character.
NASA Astrophysics Data System (ADS)
Sengupta, Parijat; Kubis, Tillmann; Tan, Yaohua; Klimeck, Gerhard
2015-01-01
Bi2Te3 and Bi2Se3 are well known 3D-topological insulators (TI). Films made of these materials exhibit metal-like surface states with a Dirac dispersion and possess high mobility. The high mobility metal-like surface states can serve as building blocks for a variety of applications that involve tuning their dispersion relationship and opening a band gap. A band gap can be opened either by breaking time reversal symmetry, the proximity effect of a superconductor or ferromagnet or adjusting the dimensionality of the TI material. In this work, methods that can be employed to easily open a band gap for the TI surface states are assessed. Two approaches are described: (1) Coating the surface states with a ferromagnet which has a controllable magnetization axis. The magnetization strength of the ferromagnet is incorporated as an exchange interaction term in the Hamiltonian. (2) An s-wave superconductor, because of the proximity effect, when coupled to a 3D-TI opens a band gap on the surface. Finally, the hybridization of the surface Dirac cones can be controlled by reducing the thickness of the topological insulator film. It is shown that this alters the band gap significantly.
Spin-polarized Wannier functions for the two-dimensional topological insulators
NASA Astrophysics Data System (ADS)
Zuo, Zheng-Wei; Ling, Dong-Bo; Yang, Yunyou; Sheng, L.; Xing, D. Y.
2015-09-01
We propose that the topological properties of the two-dimensional topological insulators can be classified by the evolution of the centers of the spin-polarized Wannier functions. Numerical results are obtained based upon a modified Kane-Mele model with next-nearest-neighbor hopping terms and a uniform exchange field. The centers of the spin-polarized Wannier functions are shown to display different spectral flow patterns in different quantum phases, characterizing the topological structures of the bulk energy bands.
Kelch, Inken D.; Bogle, Gib; Sands, Gregory B.; Phillips, Anthony R. J.; LeGrice, Ian J.; Rod Dunbar, P.
2015-01-01
Understanding of the microvasculature has previously been limited by the lack of methods capable of capturing and modelling complete vascular networks. We used novel imaging and computational techniques to establish the topology of the entire blood vessel network of a murine lymph node, combining 63706 confocal images at 2 μm pixel resolution to cover a volume of 3.88 mm3. Detailed measurements including the distribution of vessel diameters, branch counts, and identification of voids were subsequently re-visualised in 3D revealing regional specialisation within the network. By focussing on critical immune microenvironments we quantified differences in their vascular topology. We further developed a morphology-based approach to identify High Endothelial Venules, key sites for lymphocyte extravasation. These data represent a comprehensive and continuous blood vessel network of an entire organ and provide benchmark measurements that will inform modelling of blood vessel networks as well as enable comparison of vascular topology in different organs. PMID:26567707
Spin-electricity conversion induced by spin injection into topological insulators.
Shiomi, Y; Nomura, K; Kajiwara, Y; Eto, K; Novak, M; Segawa, Kouji; Ando, Yoichi; Saitoh, E
2014-11-01
We report successful spin injection into the surface states of topological insulators by using a spin pumping technique. By measuring the voltage that shows up across the samples as a result of spin pumping, we demonstrate that a spin-electricity conversion effect takes place in the surface states of bulk-insulating topological insulators Bi(1.5)Sb(0.5)Te(1.7)Se(1.3) and Sn-doped Bi(2)Te(2)Se. In this process, the injected spins are converted into a charge current along the Hall direction due to the spin-momentum locking on the surface state.
NASA Astrophysics Data System (ADS)
Tretiakov, O. A.; Abanov, Ar.; Murakami, Shuichi; Sinova, Jairo
2010-08-01
We study the thermoelectric properties of three-dimensional topological Anderson insulators with line dislocations. We show that at high densities of dislocations the thermoelectric figure of merit ZT can be dominated by one-dimensional topologically protected conducting states channeled through the lattice screw dislocations in the topological insulator materials with a nonzero time-reversal-invariant momentum such as Bi0.9Sb0.1. When the chemical potential does not exceed much the mobility edge the ZT at room temperatures can reach large values, much higher than unity for reasonable parameters, hence making this system a strong candidate for applications in heat management of nanodevices.
Many-body breakdown of indirect gap in topological Kondo insulators
NASA Astrophysics Data System (ADS)
Wysokiński, Marcin M.; Fabrizio, Michele
2016-09-01
We show that the inclusion of nonlocal correlation effects in a variational wave function for the ground state of a topological Anderson lattice Hamiltonian is capable of describing both topologically trivial insulating phases and nontrivial ones characterized by an indirect gap, as well as its closure at the transition into a metallic phase. The method, though applied to an oversimplified model, thus captures the metallic and insulating states that are indeed observed in a variety of Kondo semiconductors, while accounting for topologically nontrivial band structures.
Tuning thermoelectricity in a Bi2Se3 topological insulator via varied film thickness
Guo, Minghua; Wang, Zhenyu; Xu, Yong; Huang, Huaqing; Zang, Yunyi; Liu, Chang; Duan, Wenhui; Gan, Zhongxue; Zhang, Shou-Cheng; He, Ke; et al
2016-01-12
We report thermoelectric transport studies on Bi2Se3 topological insulator thin films with varied thickness grown by molecular beam epitaxy. We find that the Seebeck coefficient and thermoelectric power factor decrease systematically with the reduction of film thickness. These experimental observations can be explained quantitatively by theoretical calculations based on realistic electronic band structure of the Bi2Se3 thin films. Lastly, this work illustrates the crucial role played by the topological surface states on the thermoelectric transport of topological insulators, and sheds new light on further improvement of their thermoelectric performance.