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Sample records for 3x nm node

  1. Lithography strategy for 65-nm node

    NASA Astrophysics Data System (ADS)

    Borodovsky, Yan A.; Schenker, Richard E.; Allen, Gary A.; Tejnil, Edita; Hwang, David H.; Lo, Fu-Chang; Singh, Vivek K.; Gleason, Robert E.; Brandenburg, Joseph E.; Bigwood, Robert M.

    2002-07-01

    Intel will start high volume manufacturing (HVM) of the 65nm node in 2005. Microprocessor density and performance trends will continue to follow Moore's law and cost-effective patterning solutions capable of supporting it have to be found, demonstrated and developed during 2002-2004. Given the uncertainty regarding the readiness and respective capabilities of 157nm and 193nm lithography to support 65nm technology requirements, Intel is developing both lithographic options and corresponding infrastructure with the intent to use both options in manufacturing. Development and use of dual lithographic options for a given technology node in manufacturing is not a new paradigm for Intel: whenever introduction of a new exposure wavelength presented excessive risk to the manufacturing schedule, Intel developed parallel patterning approaches in time for the manufacturing ramp. Both I-line and 248nm patterning solutions were developed and successfully used in manufacturing of the 350nm node at Intel. Similarly, 248nm and 193nm patterning solutions were fully developed for 130nm node high volume manufacturing.

  2. 32nm node technology development using interference immersion lithography

    NASA Astrophysics Data System (ADS)

    Sewell, Harry; McCafferty, Diane; Markoya, Louis; Hendrickx, Eric; Hermans, Jan; Ronse, Kurt

    2005-05-01

    The 38nm and 32nm lithography nodes are the next major targets for optical lithography on the Semiconductor Industry Roadmap. The recently developed water-based immersion lithography using ArF illumination will be able to provide an optical solution for lithography at the 45nm node, but it will not be able to achieve the 38nm or the 32nm nodes as currently defined. To achieve these next lithographic nodes will require new, very high refractive index fluids to replace the water used in current immersion systems. This paper describes tests and experiments using an interference immersion lithography test jig to develop key technology for the 32nm node. Interference imaging printers have been available for years, and with the advent of Immersion Lithography, they have a new use. Interference immersion image printing offers users a rapid, cost-effective way to develop immersion lithography, particularly at extremely high resolutions. Although it can never replace classical lens-based lithography systems for semiconductor device production, it does offer a way to develop resist and fluid technology at a relatively low cost. Its simple image-forming format offers easy access to the basic physics of advanced imaging. Issues such as: Polarization of the image forming light rays; Fluid/resist interaction during exposure; Topcoat film performance; and the Line Edge Roughness (LER) of resists at extremely high resolutions can all be readily studied. Experiments are described and results are provided for work on: 32nm imaging tests; high refractive index fluid testing using 193nm wavelength at resolutions well beyond current lens-based system capabilities; and polarization configuration testing on 45nm, 38nm, and 32nm L/S features. Results on the performance of resists and topcoats are reported for 32nm L/S features.

  3. Electron beam inspection of 16nm HP node EUV masks

    NASA Astrophysics Data System (ADS)

    Shimomura, Takeya; Narukawa, Shogo; Abe, Tsukasa; Takikawa, Tadahiko; Hayashi, Naoya; Wang, Fei; Ma, Long; Lin, Chia-Wen; Zhao, Yan; Kuan, Chiyan; Jau, Jack

    2012-11-01

    EUV lithography (EUVL) is the most promising solution for 16nm HP node semiconductor device manufacturing and beyond. The fabrication of defect free EUV mask is one of the most challenging roadblocks to insert EUVL into high volume manufacturing (HVM). To fabricate and assure the defect free EUV masks, electron beam inspection (EBI) tool will be likely the necessary tool since optical mask inspection systems using 193nm and 199nm light are reaching a practical resolution limit around 16nm HP node EUV mask. For production use of EBI, several challenges and potential issues are expected. Firstly, required defect detection sensitivity is quite high. According to ITRS roadmap updated in 2011, the smallest defect size needed to detect is about 18nm for 15nm NAND Flash HP node EUV mask. Secondly, small pixel size is likely required to obtain the high sensitivity. Thus, it might damage Ru capped Mo/Si multilayer due to accumulated high density electron beam bombardments. It also has potential of elevation of nuisance defects and reduction of throughput. These challenges must be solved before inserting EBI system into EUV mask HVM line. In this paper, we share our initial inspection results for 16nm HP node EUV mask (64nm HP absorber pattern on the EUV mask) using an EBI system eXplore® 5400 developed by Hermes Microvision, Inc. (HMI). In particularly, defect detection sensitivity, inspectability and damage to EUV mask were assessed. As conclusions, we found that the EBI system has capability to capture 16nm defects on 64nm absorber pattern EUV mask, satisfying the sensitivity requirement of 15nm NAND Flash HP node EUV mask. Furthermore, we confirmed there is no significant damage to susceptible Ru capped Mo/Si multilayer. We also identified that low throughput and high nuisance defect rate are critical challenges needed to address for the 16nm HP node EUV mask inspection. The high nuisance defect rate could be generated by poor LWR and stitching errors during EB writing

  4. Process liability evaluation for beyond 22nm node using EUVL

    NASA Astrophysics Data System (ADS)

    Tawarayama, Kazuo; Aoyama, Hajime; Matsunaga, Kentaro; Arisawa, Yukiyasu; Uno, Taiga; Magoshi, Shunko; Kyoh, Suigen; Nakajima, Yumi; Inanami, Ryoichi; Tanaka, Satoshi; Kobiki, Ayumi; Kikuchi, Yukiko; Kawamura, Daisuke; Takai, Kosuke; Murano, Koji; Hayashi, Yumi; Mori, Ichiro

    2010-04-01

    Extreme ultraviolet lithography (EUVL) is the most promising candidate for the manufacture of devices with a half pitch of 32 nm and beyond. We are now evaluating the process liability of EUVL in view of the current status of lithography technology development. In a previous study, we demonstrated the feasibility of manufacturing 32-nm-node devices by means of a wafer process that employed the EUV1, a full-field step-and-scan exposure tool. To evaluate yield, a test pattern was drawn on a multilayer resist and exposed. After development, the pattern was replicated in SiO2 film by etching, and metal wires were formed by a damascene process. Resolution enhancement is needed to advance to the 22- nm node and beyond, and a practical solution is off-axis illumination (OAI). This paper presents the results of a study on yield improvement that used a 32-nm-node test chip, and also clarifies a critical issue in the use of EUVL in a wafer process for device manufacture at the 22-nm node and beyond.

  5. Photomask technology for 32nm node and beyond

    NASA Astrophysics Data System (ADS)

    Hikichi, Ryugo; Ishii, Hiroyuki; Migita, Hidekazu; Kakehi, Noriko; Shimizu, Mochihiro; Takamizawa, Hideyoshi; Nagano, Tsugumi; Hashimoto, Masahiro; Iwashita, Hiroyuki; Suzuki, Toshiyuki; Hosoya, Morio; Ohkubo, Yasushi; Ushida, Masao; Mitsui, Hideaki

    2008-05-01

    193nm-immersion lithography is the most promising technology for 32nm-node device fabrication. At the 32nm technology-node, the performance of photomasks, not only phase-shift masks but also binary masks, needs to be improved, especially in "resolution" and "CD accuracy". To meet sub-100nm resolution with high precision, further thinning of resist thickness will be needed. To improve CD performance, we have designed a new Cr-on-glass (COG) blank for binary applications, having OD-3 at 193nm. This simple Cr structure can obtain superior performance with the conventional mask-making process. Since the hardmask concept is one of the alternative solutions, we have also designed a multilayered binary blank. The new COG blank (NTARC) was fully dry-etched with over 25% shorter etching time than NTAR7, which is a conventional COG blank. Thinner resist (up to 200nm) was possible for NTARC. NTARC with 200nm-thick resist showed superior resolution and CD linearity in all pattern categories. On the other hand, the multilayered binary stack gives us a wide etching margin for several etching steps. Super thin resist (up to 100nm) was suitable by using a Cr-hardmask on a MoSi-absorber structure (COMS). The COMS blanks showed superior performance, especially in tiny clear patterns, such as the isolated hole pattern. We confirmed that these new photomask blanks, NTARC and COMS, will meet the requirements for 32nm-node and beyond, for all aspects of mask-making.

  6. 28nm node process optimization: a lithography centric view

    NASA Astrophysics Data System (ADS)

    Seltmann, Rolf

    2014-10-01

    Many experts claim that the 28nm technology node will be the most cost effective technology node forever. This results from primarily from the cost of manufacturing due to the fact that 28nm is the last true Single Patterning (SP) node. It is also affected by the dramatic increase of design costs and the limited shrink factor of the next following nodes. Thus, it is assumed that this technology still will be alive still for many years. To be cost competitive, high yields are mandatory. Meanwhile, leading edge foundries have optimized the yield of the 28nm node to such a level that that it is nearly exclusively defined by random defectivity. However, it was a long way to go to come to that level. In my talk I will concentrate on the contribution of lithography to this yield learning curve. I will choose a critical metal patterning application. I will show what was needed to optimize the process window to a level beyond the usual OPC model work that was common on previous nodes. Reducing the process (in particular focus) variability is a complementary need. It will be shown which improvements were needed in tooling, process control and design-mask-wafer interaction to remove all systematic yield detractors. Over the last couple of years new scanner platforms were introduced that were targeted for both better productivity and better parametric performance. But this was not a clear run-path. It needed some extra affords of the tool suppliers together with the Fab to bring the tool variability down to the necessary level. Another important topic to reduce variability is the interaction of wafer none-planarity and lithography optimization. Having an accurate knowledge of within die topography is essential for optimum patterning. By completing both the variability reduction work and the process window enhancement work we were able to transfer the original marginal process budget to a robust positive budget and thus ensuring high yield and low costs.

  7. Design and manufacturability tradeoffs in unidirectional and bidirectional standard cell layouts in 14 nm node

    NASA Astrophysics Data System (ADS)

    Vaidyanathan, Kaushik; Ng, Siew Hoon; Morris, Daniel; Lafferty, Neal; Liebmann, Lars; Bender, Mitchell; Huang, Wenbin; Lai, Kafai; Pileggi, Larry; Strojwas, Andrzej

    2012-03-01

    The 14 nm node is seeing the dominant use of three-dimensional FinFET architectures, local interconnects, multiple patterning processes and restricted design rules. With the adoption of these new process technologies and design styles, it becomes necessary to rethink the standard cell library design methodologies that proved successful in the past. In this paper, we compare the design efficiency and manufacturability of standard cell libraries that use either unidirectional or bidirectional Metal 1. In contrast to previous nodes, a 14 nm 9-track unidirectional standard cell layout results in up to 20% lower energy-delay-area product as compared to the 9-track bidirectional standard cell layout. Manufacturability assessment shows that the unidirectional standard cell layouts save one exposure on Metal 1, reduces process variability by 10% and layout construct count by 2-3X. As a result, the unidirectional standard cell layout could serve as a key enabler for affordable scaling.

  8. Quality metric for accurate overlay control in <20nm nodes

    NASA Astrophysics Data System (ADS)

    Klein, Dana; Amit, Eran; Cohen, Guy; Amir, Nuriel; Har-Zvi, Michael; Huang, Chin-Chou Kevin; Karur-Shanmugam, Ramkumar; Pierson, Bill; Kato, Cindy; Kurita, Hiroyuki

    2013-04-01

    The semiconductor industry is moving toward 20nm nodes and below. As the Overlay (OVL) budget is getting tighter at these advanced nodes, the importance in the accuracy in each nanometer of OVL error is critical. When process owners select OVL targets and methods for their process, they must do it wisely; otherwise the reported OVL could be inaccurate, resulting in yield loss. The same problem can occur when the target sampling map is chosen incorrectly, consisting of asymmetric targets that will cause biased correctable terms and a corrupted wafer. Total measurement uncertainty (TMU) is the main parameter that process owners use when choosing an OVL target per layer. Going towards the 20nm nodes and below, TMU will not be enough for accurate OVL control. KLA-Tencor has introduced a quality score named `Qmerit' for its imaging based OVL (IBO) targets, which is obtained on the-fly for each OVL measurement point in X & Y. This Qmerit score will enable the process owners to select compatible targets which provide accurate OVL values for their process and thereby improve their yield. Together with K-T Analyzer's ability to detect the symmetric targets across the wafer and within the field, the Archer tools will continue to provide an independent, reliable measurement of OVL error into the next advanced nodes, enabling fabs to manufacture devices that meet their tight OVL error budgets.

  9. Taking the X Architecture to the 65-nm technology node

    NASA Astrophysics Data System (ADS)

    Sarma, Robin C.; Smayling, Michael C.; Arora, Narain; Nagata, Toshiyuki; Duane, Michael P.; Shah, Santosh; Keston, Harris J.; Oemardani, Shiany

    2004-05-01

    The X Architecture is a new way of orienting the interconnect on an integrated circuit using diagonal pathways, as well as the traditional right-angle, or Manhattan, configuration. By enabling designs with significantly less wire and fewer vias, the X Architecture can provide substantial improvements in chip performance, power consumption and cost. Members of the X Initiative semiconductor supply chain consortium have demonstrated the production worthiness of the X Architecture at the 130-nm and 90-nm process technology nodes. This paper presents an assessment of the manufacturing readiness of the X Architecture for the 65-nm technology node. The extent to which current production capabilities in mask writing, lithography, wafer processing, inspection and metrology can be used is discussed using the results from a 65-nm test chip. The project was a collaborative effort amongst a number of companies in the IC fabrication supply chain. Applied Materials fabricated the 65-nm X Architecture test chip at its Maydan Technology Center and leveraged the technology of other X Initiative members. Cadence Design Systems provided the test structure design and chip validation tools, Dai Nippon Printing produced the masks and Canon"s imaging system was employed for the photolithography.

  10. Enabling 22-nm logic node with advanced RET solutions

    NASA Astrophysics Data System (ADS)

    Farys, V.; Depre, L.; Finders, J.; Arnoux, V.; Trouiller, Y.; Liu, H. Y.; Yesilada, E.; Zeggaoui, N.; Alleaume, C.

    2011-04-01

    The 22-nm technology node presents a real breakthrough compared to previous nodes in the way that state of the art scanner will be limited to a numerical aperture of 1.35. Thus we cannot "simply" apply a shrink factor from the previous node, and tradeoffs have to be found between Design Rules, Process integration and RET solutions in order to maintain the 50% density gain imposed by the Moore's law. One of the most challenging parts to enable the node is the ability to pattern Back-End Holes and Metal layers with sufficient process window. It is clearly established that early process for these layers will be performed by double patterning technique coupled with advanced OPC solutions. In this paper we propose a cross comparison between possible double patterning solutions: Pitch Splitting (PS) and Sidewall Image Transfer (SIT) and their implication on design rules and CD Uniformity. Advanced OPC solutions such as Model Based SRAF and Source Mask Optimization will also be investigated in order to ensure good process control. This work is a part of the Solid's JDP between ST, ASML and Brion in the framework of Nano2012 sponsored by the French government.

  11. Novel high sensitivity EUV photoresist for sub-7nm node

    NASA Astrophysics Data System (ADS)

    Nagai, Tomoki; Nakagawa, Hisashi; Naruoka, Takehiko; Tagawa, Seiichi; Oshima, Akihiro; Nagahara, Seiji; Shiraishi, Gosuke; Yoshihara, Kosuke; Terashita, Yuichi; Minekawa, Yukie; Buitrago, Elizabeth; Ekinci, Yasin; Yildirim, Oktay; Meeuwissen, Marieke; Hoefnagels, Rik; Rispens, Gijsbert; Verspaget, Coen; Maas, Raymond

    2016-03-01

    Extreme ultraviolet lithography (EUVL) has been recognized as the most promising candidate for the manufacture of semiconductor devices for the 7 nm node and beyond. A key point in the successful introduction of EUV lithography in high volume manufacture (HVM) is the effective EUV dose utilization while simultaneously realizing ultra-high resolution and low line edge roughness (LER). Here we show EUV resist sensitivity improvement with the use of a photosensitized chemically amplified resist PSCARTM system. The evaluation of this new chemically amplified resist (CAR) as performed using EUV interference lithography (EUV-IL) is described and the fundamentals are discussed.

  12. MoSi absorber photomask for 32nm node

    NASA Astrophysics Data System (ADS)

    Konishi, Toshio; Kojima, Yosuke; Takahashi, Hiroyuki; Tanabe, Masato; Haraguchi, Takashi; Lamantia, Matthew; Fukushima, Yuichi; Okuda, Yoshimitsu

    2008-05-01

    The development of semiconductor process for 32nm node is in progress. Immersion lithography has been introduced as an extension of 193nm lithograpy. In addition, DPL (Double patterning lithography) is becoming a strong candidate of next generation lithography. The extension of optical lithography increases more mask complexity and tighter specification of photomasks. CD performance is the most important issue in the advanced photomask technology. However, it is expected that conventional mask cannot satisfy the required mask specifications for 32nm node and beyond. Most of CD errors are contributed to the dry etching process. Mask CD variation is greatly influenced by the loading effect from dry etching of the absorber. As the required accuracy of the mask arises, Cr absorber thickness has been gradually thinner. CD linearity with the thinner Cr absorber thickness has better performance. However, it is difficult to apply thinner Cr absorber thickness simply under the condition of OD > 3, which is needed for wafer printing. So, we adopted MoSi absorber instead of conventional Cr absorber, because MoSi absorber has less micro and global loading effect than that of Cr absorber. By using MoSi absorber, we can reduce Cr thickness as a hardmask. The thinner Cr hardmask allows for reduce resist thickness and become same condition for conventional EB resist lithography. The lithography performances were confirmed by the simulation and wafer printing. The new MoSi absorber mask behaves similar to the conventional Cr absorber mask. The adoption of super thin Cr as a hardmask made it possible to reduce resist thickness. By the application of the thin resist and the latest tools, we'll improve the mask performance to meet the 32 nm generation specification.

  13. NXT:1980Di immersion scanner for 7nm and 5nm production nodes

    NASA Astrophysics Data System (ADS)

    de Graaf, Roelof; Weichselbaum, Stefan; Droste, Richard; McLaren, Matthew; Koek, Bert; de Boeij, Wim

    2016-03-01

    Immersion scanners remain the critical lithography workhorses in semiconductor device manufacturing. When progressing towards the 7nm device node for logic and D18 device node for DRAM production, pattern-placement and layer-to-layer overlay requirements keep progressively scaling down and consequently require system improvements in immersion scanners. The on-product-overlay requirements are approaching levels of only a few nanometers, imposing stringent requirements on the scanner tool design in terms of reproducibility, accuracy and stability. In this paper we report on the performance of the NXT:1980Di immersion scanner. The NXT:1980Di builds upon the NXT:1970Ci, that is widely used for 16nm, 14nm and 10nm high-volume manufacturing. We will discuss the NXT:1980Di system- and sub-system/module enhancements that drive the scanner overlay, focus and productivity performance. Overlay, imaging, focus, productivity and defectivity data will be presented for multiple tools. To further reduce the on-product overlay system performance, alignment sensor contrast improvements as well as active reticle temperature conditioning are implemented on the NXT:1980Di. Reticle temperature conditioning will reduce reticle heating overlay and the higher contrast alignment sensor will improve alignment robustness for processed alignment targets. Due to an increased usage of multiple patterning techniques, an increased number of immersion exposures is required. NXT:1980Di scanner design modifications raised productivity levels from 250wph to 275wph. This productivity enhancement provides lower cost of ownership (CoO) for customers using immersion technology.

  14. Megasonic cleaning: possible solutions for 22nm node and beyond

    NASA Astrophysics Data System (ADS)

    Shende, Hrishi; Singh, Sherjang; Baugh, James; Mann, Raunak; Dietze, Uwe; Dress, Peter

    2011-11-01

    Megasonic energy transfer to the photomask surface is indirectly controlled by process parameters that provide an effective handle to physical force distribution on the photomask surface. A better understanding of the influence of these parameters on the physical force distribution and their effect on pattern damage of fragile mask features can help optimize megasonic energy transfer as well as assist in extending this cleaning technology beyond the 22nm node. In this paper we have specifically studied the effect of higher megasonic frequencies (3 & 4MHz) and media gasification on pattern damage; the effect of cleaning chemistry, media volume flow rate, process time, and nozzle distance to the mask surface during the dispense is also discussed. Megasonic energy characterization is performed by measuring the acoustic energy as well as cavitation created by megasonic energy through sonoluminescence measurements.

  15. Cell projection use in maskless lithography for 45nm and 32nm logic nodes

    NASA Astrophysics Data System (ADS)

    Manakli, S.; Komami, H.; Takizawa, M.; Mitsuhashi, T.; Pain, L.

    2009-03-01

    Due to the ever-increasing cost of equipment and mask complexity, the use of optical lithography for integrated circuit manufacturing is increasingly more complex and expensive. Recent workshops and conferences in semiconductor lithography underlined that one alternative to support sub-32nm technologies is mask-less lithography option using electron beam technology. However, this direct write approach based on variable shaped beam principle (VSB) is not sufficient in terms of throughput, i.e. of productivity. New direct write techniques like multibeam systems are under development, but these solutions will not be mature before 2012. The use of character/cell projection (CP) on industrial VSB tools is the first step to deal with the throughput concerns. This paper presents the status of the CP technology and evaluates its possible use for the 45nm and 32nm logic nodes. It will present standard cell and SRAM structures that are printed as single characters using the CP technique. All experiments are done using the Advantest tool (F3000) which can project up to 100 different cells per layer. Cell extractions and design have been performed with the design and software solution developed by D2S. In this paper, we first evaluate the performance gain that can be obtained with the CP approach compared to the standard VSB approach. This paper also details the patterning capability obtained by using the CP concept. An evaluation of the CD uniformity and process stability is also presented. Finally this paper discusses about the improvements of this technique to address high resolution and to improve the throughput concerns.

  16. Extension of 193 nm dry lithography to 45-nm half-pitch node: double exposure and double processing technique

    NASA Astrophysics Data System (ADS)

    Biswas, Abani M.; Li, Jianliang; Hiserote, Jay A.; Melvin, Lawrence S., III

    2006-10-01

    Immersion lithography and multiple exposure techniques are the most promising methods to extend lithography manufacturing to the 45nm node. Although immersion lithography has attracted much attention recently as a promising optical lithography extension, it will not solve all the problems at the 45-nm node. The 'dry' option, (i.e. double exposure/etch) which can be realized with standard processing practice, will extend 193-nm lithography to the end of the current industry roadmap. Double exposure/etch lithography is expensive in terms of cost, throughput time, and overlay registration accuracy. However, it is less challenging compared to other possible alternatives and has the ability to break through the κ I barrier (0.25). This process, in combination with attenuated PSM (att-PSM) mask, is a good imaging solution that can reach, and most likely go beyond, the 45-nm node. Mask making requirements in a double exposure scheme will be reduced significantly. This can be appreciated by the fact that the separation of tightly-pitched mask into two less demanding pitch patterns will reduce the stringent specifications for each mask. In this study, modeling of double exposure lithography (DEL) with att-PSM masks to target 45-nm node is described. In addition, mask separation and implementation issues of optical proximity corrections (OPC) to improve process window are studied. To understand the impact of OPC on the process window, Fourier analysis of the masks has been carried out as well.

  17. Gaps analysis for CD metrology beyond the 22nm node

    NASA Astrophysics Data System (ADS)

    Bunday, Benjamin; Germer, Thomas A.; Vartanian, Victor; Cordes, Aaron; Cepler, Aron; Settens, Charles

    2013-04-01

    This paper will examine the future for critical dimension (CD) metrology. First, we will present the extensive list of applications for which CD metrology solutions are needed, showing commonalities and differences among the various applications. We will then report on the expected technical limits of the metrology solutions currently being investigated by SEMATECH and others in the industry to address the metrology challenges of future nodes, including conventional CD scanning electron microscopy (CD-SEM) and optical critical dimension (OCD) metrology and new potential solutions such as He-ion microscopy (HeIM, sometimes elsewhere referred to as HIM), CD atomic force microscopy (CD-AFM), CD small-angle x-ray scattering (CD-SAXS), high-voltage scanning electron microscopy (HV-SEM), and other types. A technical gap analysis matrix will then be demonstrated, showing the current state of understanding of the future of the CD metrology space.

  18. Thin hardmask patterning stacks for the 22-nm node

    NASA Astrophysics Data System (ADS)

    Zhu, Zhimin; Piscani, Emil; Wang, Yubao; Macie, Jan; Neef, Charles J.; Smith, Brian

    2009-03-01

    This paper presents robust trilayer lithography technology for cutting-edge IC fabrication and double-patterning applications. The goal is to reduce the thickness of a silicon hardmask so that the minimum thickness of the photoresist is not limited by the etch budget and can be optimized for lithography performance. Successful results of pattern etching through a 300-nm carbon layer are presented to prove that a 13.5-nm silicon hardmask is thick enough to transfer the line pattern. Another highlight of this work is the use of a simulation tool to design the stack so that UV light is concentrated at the bottom of the trenches. This design helps to clear the resist in the trenches and prevent resist top loss. An experiment was designed to validate the assumption with 45-nm dense lines at various exposure doses, using an Exitech MS-193i immersion microstepper (NA = 1.3) at the SEMATECH Resist Test Center. Results show that such a stack design obtains very wide CD processing window and is robust for 1:3 line patterning at the diffraction limit, as well as for patterning small contact holes.

  19. Characterization of 32nm node BEOL grating structures using scatterometry

    NASA Astrophysics Data System (ADS)

    Zangooie, Shahin; Sendelbach, Matthew; Angyal, Matthew; Archie, Charles; Vaid, Alok; Matthew, Itty; Herrera, Pedro

    2008-03-01

    Implementations of scatterometry in the back end of the line (BEOL) of the devices requires design of advanced measurement targets with attention to CMP ground rule constraints as well as model simplicity details. In this paper we outline basic design rules for scatterometry back end targets by stacking and staggering measurement pads to reduce metal pattern density in the horizontal plane of the device and to avoid progressive dishing problems along the vertical direction. Furthermore, important characteristics of the copper shapes in terms of their opaqueness and uniformity are discussed. It is shown that the M1 copper thicknesses larger than 100 nm are more than sufficient for accurate back end scatterometry implementations eliminating the need for modeling of contributions from the buried layers. AFM and ellipsometry line scans also show that the copper pads are sufficiently uniform with a sweet spot area of around 20 μm. Hence, accurate scatterometry can be done with negligible edge and/or dishing contributions if the measurement spot is placed any where within the sweet spot area. Reference metrology utilizing CD-SEM and CD-AFM techniques prove accuracy of the optical solutions for the develop inspect and final inspect grating structures. The total measurement uncertainty (TMU) values for the process of record line width are of the order of 0.77 nm and 0.35 nm at the develop inspect and final inspect levels, respectively.

  20. Imaging performance and challenges of 10nm and 7nm logic nodes with 0.33 NA EUV

    NASA Astrophysics Data System (ADS)

    van Setten, Eelco; Schiffelers, Guido; Psara, Eleni; Oorschot, Dorothe; Davydova, Natalia; Finders, Jo; Depre, Laurent; Farys, Vincent

    2014-10-01

    The NXE:3300B is ASML's third generation EUV system and has an NA of 0.33 and is positioned at a resolution of 22nm, which can be extended down to 18nm and below with off-axis illumination at full transmission. Multiple systems have been qualified and installed at customers. The NXE:3300B succeeds the NXE:3100 system (NA of 0.25), which has allowed customers to gain valuable EUV experience. It is expected that EUV will be adopted first for critical Logic layers at 10nm and 7nm nodes, such as Metal-1, to avoid the complexity of triple patterning schemes using ArF immersion. In this paper we will evaluate the imaging performance of (sub-)10nm node Logic M1 on the NXE:3300B EUV scanner. We will show the line-end performance of tip-to-tip and tip-to-space test features for various pitches and illumination settings and the performance enhancement obtained by means of a 1st round of OPC. We will also show the magnitude of local variations. The Logic M1 cell is evaluated at various critical features to identify hot spots. A 2nd round OPC model was calibrated of which we will show the model accuracy and ability to predict hot spots in the Logic M1 cell. The calibrated OPC model is used to predict the expected performance at 7nm node Logic using off-axis illumination at 16nm minimum half pitch. Initial results of L/S exposed on the NXE:3300B at 7nm node resolutions will be shown. An outlook is given to future 0.33 NA systems on the ASML roadmap with enhanced illuminator capabilities to further improve performance and process window.

  1. Radiation Performance of 1 Gbit DDR SDRAMs Fabricated in the 90 nm CMOS Technology Node

    NASA Technical Reports Server (NTRS)

    Ladbury, Raymond L.; Gorelick, Jerry L.; Berg, M. D.; Kim, H.; LaBel, K.; Friendlich, M.; Koga, R.; George, J.; Crain, S.; Yu, P.; Reed, R. A.

    2006-01-01

    We present Single Event Effect (SEE) and Total Ionizing Dose (TID) data for 1 Gbit DDR SDRAMs (90 nm CMOS technology) as well as comparing this data with earlier technology nodes from the same manufacturer.

  2. Imaging budgets for EUV optics: ready for 22-nm node and beyond

    NASA Astrophysics Data System (ADS)

    Bienert, Marc; Göhnemeier, Aksel; Natt, Oliver; Lowisch, Martin; Gräupner, Paul; Heil, Tilmann; Garreis, Reiner; van Ingen Schenau, Koen; Hansen, Steve

    2009-03-01

    We derive an imaging budget from the performance of EUV optics with NA = 0.32, and demonstrate that the 22nm node requirements are met. Based on aerial image simulations, we analyze the impact of all relevant contributors, ranging from conventional quantities, like straylight or aberrations, to EUV-specific topics, namely influence of 3D mask effects and facetted illumination pupils. As test structures we consider dense to isolated lines, contact holes, and 2D elbows. We classify the contributions in a hierarchical order according to their weight in the CDU budget and identify the main drivers. The underlying physical mechanisms causing different contributions to be critical or less significant are clarified. Finally, we give an outlook for the 16nm and 11nm nodes. Future developments in optics manufacturing will keep the budgets controlled, thereby paving the way to enable printing of these upcoming nodes.

  3. Lithographic performance comparison with various RET for 45-nm node with hyper NA

    NASA Astrophysics Data System (ADS)

    Adachi, Takashi; Inazuki, Yuichi; Sutou, Takanori; Kitahata, Yasuhisa; Morikawa, Yasutaka; Toyama, Nobuhito; Mohri, Hiroshi; Hayashi, Naoya

    2006-05-01

    In order to realize 45 nm node lithography, strong resolution enhancement technology (RET) and water immersion will be needed. In this research, we discussed about various RET performance comparison for 45 nm node using 3D rigorous simulation. As a candidate, we chose binary mask (BIN), several kinds of attenuated phase-shifting mask (att-PSM) and chrome-less phase-shifting lithography mask (CPL). The printing performance was evaluated and compared for each RET options, after the optimizing illumination conditions, mask structure and optical proximity correction (OPC). The evaluation items of printing performance were CD-DOF, contrast-DOF, conventional ED-window and MEEF, etc. It's expected that effect of mask 3D topography becomes important at 45 nm node, so we argued about not only the case of ideal structures, but also the mask topography error effects. Several kinds of mask topography error were evaluated and we confirmed how these errors affect to printing performance.

  4. Implementation of templated DSA for via layer patterning at the 7nm node

    NASA Astrophysics Data System (ADS)

    Gronheid, Roel; Doise, Jan; Bekaert, Joost; Chan, Boon Teik; Karageorgos, Ioannis; Ryckaert, Julien; Vandenberghe, Geert; Cao, Yi; Lin, Guanyang; Somervell, Mark; Fenger, Germain; Fuchimoto, Daisuke

    2015-03-01

    In recent years major advancements have been made in the directed self-assembly (DSA) of block copolymers (BCP). Insertion of DSA for IC fabrication is seriously considered for the 7nm node. At this node the DSA technology could alleviate costs for double patterning and limit the number of masks that would be required per layer. At imec multiple approaches for inserting DSA into the 7nm node are considered. One of the most straightforward approaches for implementation would be for via patterning through templated DSA (grapho-epitaxy), since hole patterns are readily accessible through templated hole patterning of cylindrical phase BCP materials. Here, the pre-pattern template is first patterned into a spin-on hardmask stack. After optimizing the surface properties of the template the desired hole patterns can be obtained by the BCP DSA process. For implementation of this approach to be implemented for 7nm node via patterning, not only the appropriate process flow needs to be available, but also appropriate metrology (including for pattern placement accuracy) and DSA-aware mask decomposition are required. In this paper the imec approach for 7nm node via patterning will be discussed.

  5. Double patterning design split implementation and validation for the 32nm node

    NASA Astrophysics Data System (ADS)

    Drapeau, Martin; Wiaux, Vincent; Hendrickx, Eric; Verhaegen, Staf; Machida, Takahiro

    2007-03-01

    Single exposure capable systems for the 32nm 1/2 pitch (HP) node may not be ready in time for production. At the possible NA of 1.35 still using water immersion lithography, one option to generate the required dense pitches is double patterning. Here a design is printed with two separate exposures and etch steps to increase the pitch. If a 2x increase in pitch can be achieved through the design split, double patterning could thus theoretically allow using exposure systems conceived for the 65nm node to print 32nm node designs. In this paper we focus on the aspect of design splitting and lithography for double patterning the poly layer of 32nm logic cells using the Synopsys full-chip physical verification and OPC conversion platforms. All 32nm node cells have been split in an automated fashion to target different aggressiveness towards pitch reduction and polygon cutting. Every design split has gone through lithography optimization, Optical Proximity Correction (OPC) and Lithography Rule Checking (LRC) at NA values of 0.93, 1.20, and 1.35. Final comparisons are based on simulations across the process window. In addition, we have experimentally verified selected single-patterning problem areas on a 1.20 NA exposure tool (ASML XT:1700Fi at IMEC). With this information, we establish guidelines for double patterning conversions and present a new design rule for double patterning compliance checking applicable to full-chip scale.

  6. Defect inspection and printability study for 14 nm node and beyond photomask

    NASA Astrophysics Data System (ADS)

    Seki, Kazunori; Yonetani, Masashi; Badger, Karen; Dechene, Dan J.; Akima, Shinji

    2016-10-01

    Two different mask inspection techniques are developed and compared for 14 nm node and beyond photomasks, High resolution and Litho-based inspection. High resolution inspection is the general inspection method in which a 19x nm wavelength laser is used with the High NA inspection optics. Litho-based inspection is a new inspection technology. This inspection uses the wafer lithography information, and as such, this method has automatic defect classification capability which is based on wafer printability. Both High resolution and Litho-based inspection methods are compared using 14 nm and 7 nm node programmed defect and production design masks. The defect sensitivity and mask inspectability is compared, in addition to comparing the defect classification and throughput. Additionally, the Cost / Infrastructure comparison is analyzed and the impact of each inspection method is discussed.

  7. Writing time estimation of EB mask writer EBM-9000 for hp16nm/logic11nm node generation

    NASA Astrophysics Data System (ADS)

    Kamikubo, Takashi; Takekoshi, Hidekazu; Ogasawara, Munehiro; Yamada, Hirokazu; Hattori, Kiyoshi

    2014-10-01

    The scaling of semiconductor devices is slowing down because of the difficulty in establishing their functionality at the nano-size level and also because of the limitations in fabrications, mainly the delay of EUV lithography. While multigate devices (FinFET) are currently the main driver for scalability, other types of devices, such as 3D devices, are being realized to relax the scaling of the node. In lithography, double or multiple patterning using ArF immersion scanners is still a realistic solution offered for the hp16nm node fabrication. Other lithography candidates are those called NGL (Next Generation Lithography), such as DSA (Directed-Self-Assembling) or nanoimprint. In such situations, shot count for mask making by electron beam writers will not increase. Except for some layers, it is not increasing as previously predicted. On the other hand, there is another aspect that increases writing time. The exposure dose for mask writing is getting higher to meet tighter specifications of CD uniformity, in other words, reduce LER. To satisfy these requirements, a new electron beam mask writer, EBM-9000, has been developed for hp16nm/logic11nm generation. Electron optical system, which has the immersion lens system, was evolved from EBM-8000 to achieve higher current density of 800A/cm2. In this paper, recent shot count and dose trend are discussed. Also, writing time is estimated for the requirements in EBM-9000.

  8. Sustainability and applicability of spacer-related patterning towards 7nm node

    NASA Astrophysics Data System (ADS)

    Oyama, Kenichi; Yamauchi, Shohei; Hara, Arisa; Natori, Sakurako; Yamato, Masatoshi; Okabe, Noriaki; Koike, Kyohei; Yaegashi, Hidetami

    2015-03-01

    Self-aligned multiple patterning technique has enabled the further down scaling through 193 immersion lithography extension [1-5]. In particular, focus on the logic device scaling, we have finished the verification of patterning technology of up to 10nm node [6-7], we will discuss about some patterning technologies that are required to 7nm node. For critical layers in FinFET devices that presume a 1D cell design, there is also a need not just for the scaling of grating patterns but also for pattern cutting process. In 7nm node, cutting number increase in metal or fin layer, and also pattern splitting of contact or via is complicated, so both cost reduction and process controllability including EPE are strongly required. For example, inverse hardmask scheme in metal layer can improve CD variation of the Cu wiring. Furthermore hole pattern shrink technology in contact layer, by the combination with the exposure technique which has k1 0.25 or less, can achieve both cost reduction and reducing the numbers of pitch splitting. This paper presents the possibility of immersion-based multiple patterning techniques for up to 7nm node.

  9. Imaging challenges in 20nm and 14nm logic nodes: hot spots performance in Metal1 layer

    NASA Astrophysics Data System (ADS)

    Timoshkov, V.; Rio, D.; Liu, H.; Gillijns, W.; Wang, J.; Wong, P.; Van Den Heuvel, D.; Wiaux, V.; Nikolsky, P.; Finders, J.

    2013-10-01

    The 20nm Metal1 layer, based on ARM standard cells, has a 2D design with minimum pitch of 64nm. This 2D design requires a Litho-Etch-Litho-Etch (LELE) double patterning. The whole design is divided in 2 splits: Me1A and Me1B. But solution of splitting conflicts needs stitching at some locations, what requires good Critical Dimension (CD) and overlay control to provide reliable contact between 2 stitched line ends. ASML Immersion NXT tools are aimed at 20 and 14nm logic production nodes. Focus control requirements become tighter, as existing 20nm production logic layouts, based on ARM, have about 50-60nm focus latitude and tight CD Uniformity (CDU) specifications, especially for line ends. IMEC inspected 20nm production Metal1 ARM standard cells with a Negative Tone Development (NTD) process using the Process Window Qualification-like technique experimentally and by Brion Tachyon LMC by simulations. Stronger defects were found thru process variations. A calibrated Tachyon model proved a good overall predictability capability for this process. Selected defects are likely to be transferred to hard mask during etch. Further, CDU inspection was performed for these critical features. Hot spots showed worse CD uniformity than specifications. Intra-field CDU contribution is significant in overall CDU budget, where reticle has major impact due to high MEEF of hot spots. Tip-to-Tip and tip-to-line hot spots have high MEEF and its variation over the field. Best focus variation range was determined by best focus offsets between hot spots and its variation within the field.

  10. Particle removal challenges with EUV patterned mask for the sub-22nm HP node

    SciTech Connect

    Rastegar, A.; Eichenlaub, S.; Kadaksham, A. J.; Lee, B.; House, M.; Huh, S.; Cha, B.; Yun, H.; Mochi, I.; Goldberg, K. A.

    2010-03-12

    The particle removal efficiency (PRE) of cleaning processes diminishes whenever the minimum defect size for a specific technology node becomes smaller. For the sub-22 nm half-pitch (HP) node, it was demonstrated that exposure to high power megasonic up to 200 W/cm{sup 2} did not damage 60 nm wide TaBN absorber lines corresponding to the 16 nm HP node on wafer. An ammonium hydroxide mixture and megasonics removes {ge}50 nm SiO{sub 2} particles with a very high PRE, A sulfuric acid hydrogen peroxide mixture (SPM) in addition to ammonium hydroxide mixture (APM) and megasonic is required to remove {ge}28 nm SiO{sub 2} particles with a high PRE. Time-of-flight secondary ion mass spectroscopy (TOFSIMS) studies show that the presence of O{sub 2} during a vacuum ultraviolet (VUV) ({lambda} = 172 nm) surface conditioning step will result in both surface oxidation and Ru removal, which drastically reduce extreme ultraviolet (EUV) mask life time under multiple cleanings. New EUV mask cleaning processes show negligible or no EUV reflectivity loss and no increase in surface roughness after up to 15 cleaning cycles. Reviewing of defect with a high current density scanning electron microscope (SEM) drastically reduces PRE and deforms SiO{sub 2} particles. 28 nm SiO{sub 2} particles on EUV masks age very fast and will deform over time, Care must be taken when reviewing EUV mask defects by SEM. Potentially new particles should be identified to calibrate short wavelength inspection tools, Based on actinic image review, 50 nm SiO{sub 2} particles on top of the EUV mask will be printed on the wafer.

  11. Joint-optimization for SRAM and logic for 28nm node and below

    NASA Astrophysics Data System (ADS)

    Verhaegen, Staf; Smayling, Michael C.; De Bisschop, Peter; Laenens, Bart

    2010-03-01

    In current and next generation nodes lithography is pushed to low k1 lithography imaging regimes. A gridded design approach with lines and cuts has previously been shown to allow optimizing illuminator conditions for critical layers in logic designs.[1] The approach has shown good pattern fidelity and is expected to be scalable to the 7nm logic node. [2] A regular pattern for logic makes the optimization problem straightforward if only standard cells are used in a chip.[3,4] However, modern SOC's include large amounts of SRAM as well. The proposed approach truly optimizes both, instead of the conventional approach of sacrificing the SRAM because of logic layouts with bends and multiple pitches. The biggest problem in co-optimizing logic cells and SRAM bit cells is the orientation of critical layers. For SRAMs, the gate and metal1 layers have lines in parallel directions, while in standard cells they are perpendicular. This would require abandoning dipole illumination for the combined optimization, and at best using some form of quadrupole. The alternative is to design the logic and SRAMs to be unified from the beginning. In this case, critical layer orientations as well as pitches could be matched and each of the layers optimized for both functional sets of patterns. Choices of patterns can be made to achieve DSMO (Design-Source-Mask-Optimization). In the 28nm to 22nm logic nodes - with contacted pitches from 110nm to 90nm and metal1 pitches from 90nm to 70nm - one of the questions to answer is when and for which layers double patterning is needed. The limit of single patterning immersion lithography can only be explored through a smart combination of restricted designs and powerful sourcemask optimization tools. In this paper a 28nm SRAM block with bit and word line periphery will be used to look at choices for Design-Source-Mask-Optimization.

  12. Considering mask pellicle effect for more accurate OPC model at 45nm technology node

    NASA Astrophysics Data System (ADS)

    Wang, Ching-Heng; Liu, Qingwei; Zhang, Liguo

    2008-11-01

    Now it comes to the 45nm technology node, which should be the first generation of the immersion micro-lithography. And the brand-new lithography tool makes many optical effects, which can be ignored at 90nm and 65nm nodes, now have significant impact on the pattern transmission process from design to silicon. Among all the effects, one that needs to be pay attention to is the mask pellicle effect's impact on the critical dimension variation. With the implement of hyper-NA lithography tools, light transmits the mask pellicle vertically is not a good approximation now, and the image blurring induced by the mask pellicle should be taken into account in the computational microlithography. In this works, we investigate how the mask pellicle impacts the accuracy of the OPC model. And we will show that considering the extremely tight critical dimension control spec for 45nm generation node, to take the mask pellicle effect into the OPC model now becomes necessary.

  13. Double patterning in lithography for 65nm node with oxidation process

    NASA Astrophysics Data System (ADS)

    Jeong, Eunsoo; Kim, Jeahee; Choi, Kwangsun; Lee, Minkon; Lee, Doosung; Kim, Myungsoo; Park, Chansik

    2008-03-01

    Recently, in order to increase the number of transistors in wafer by small feature size, optical lithography has been changed to low wavelength from 365nm to 193nm and high NA of 0.93. And further wavelength is aggressively shifting to 13.5nm for more small feature size, i.e., Extreme Ultra Violet Lithography(EUVL), a kind of Next Generation Lithography(NGL)1. And other technologies are developed such as water immersion(193nm) and photo resist Double Patterning(DP). Immersion lens system has high NA up to 1.3 due to high n of water(n=1.44 at 193nm), the parameter k1 is process constant, but 0.25 is a tough limit at a equal line and space, if we use immersion lens with 193nm wavelength than limit of resolution is 37nm. Especially, Double Exposure Technique(DET) process is widely studied because of the resolution enhancement ability using a same material and machine, despite of process complication. And SADP(Self Aligned Double Patten) is newly researched for overlay and LER(Line Edge Roughness) enhancement. In this paper, we illustrate the feasibility of the shift double pattern for 65nm-node flash using a 193nm light dipole source and the possibility of decrease minimum feature size using a property of silicon shrinkage during thermal oxidation process.

  14. Photomask etch system and process for 10nm technology node and beyond

    NASA Astrophysics Data System (ADS)

    Chandrachood, Madhavi; Grimbergen, Michael; Yu, Keven; Leung, Toi; Tran, Jeffrey; Chen, Jeff; Bivens, Darin; Yalamanchili, Rao; Wistrom, Richard; Faure, Tom; Bartlau, Peter; Crawford, Shaun; Sakamoto, Yoshifumi

    2015-10-01

    While the industry is making progress to offer EUV lithography schemes to attain ultimate critical dimensions down to 20 nm half pitch, an interim optical lithography solution to address an immediate need for resolution is offered by various integration schemes using advanced PSM (Phase Shift Mask) materials including thin e-beam resist and hard mask. Using the 193nm wavelength to produce 10nm or 7nm patterns requires a range of optimization techniques, including immersion and multiple patterning, which place a heavy demand on photomask technologies. Mask schemes with hard mask certainly help attain better selectivity and hence better resolution but pose integration challenges and defectivity issues. This paper presents a new photomask etch solution for attenuated phase shift masks that offers high selectivity (Cr:Resist > 1.5:1), tighter control on the CD uniformity with a 3sigma value approaching 1 nm and controllable CD bias (5-20 nm) with excellent CD linearity performance (<5 nm) down to the finer resolution. The new system has successfully demonstrated capability to meet the 10 nm node photomask CD requirements without the use of more complicated hard mask phase shift blanks. Significant improvement in post wet clean recovery performance was demonstrated by the use of advanced chamber materials. Examples of CD uniformity, linearity, and minimum feature size, and etch bias performance on 10 nm test site and production mask designs will be shown.

  15. Holistic overlay control for multi-patterning process layers at the 10nm and 7nm nodes

    NASA Astrophysics Data System (ADS)

    Verstappen, Leon; Mos, Evert; Wardenier, Peter; Megens, Henry; Schmitt-Weaver, Emil; Bhattacharyya, Kaustuve; Adam, Omer; Grzela, Grzegorz; van Heijst, Joost; Willems, Lotte; Wildenberg, Jochem; Ignatova, Velislava; Chen, Albert; Elich, Frank; Rajasekharan, Bijoy; Vergaij-Huizer, Lydia; Lewis, Brian; Kea, Marc; Mulkens, Jan

    2016-03-01

    Multi-patterning lithography at the 10-nm and 7-nm nodes is driving the allowed overlay error down to extreme low values. Advanced high order overlay correction schemes are needed to control the process variability. Additionally the increase of the number of split layers results in an exponential increase of metrology complexity of the total overlay and alignment tree. At the same time, the process stack includes more hard-mask steps and becomes more and more complex, with as consequence that the setup and verification of the overlay metrology recipe becomes more critical. All of the above require a holistic approach that addresses total overlay optimization from process design to process setup and control in volume manufacturing. In this paper we will present the holistic overlay control flow designed for 10-nm and 7-nm nodes and illustrate the achievable ultimate overlay performance for a logic and DRAM use case. As figure 1 illustrates we will explain the details of the steps in the holistic flow. Overlay accuracy is the driver for target design and metrology tool optimization like wavelength and polarization. We will show that it is essential to include processing effects like etching and CMP which can result in a physical asymmetry of the bottom grating of diffraction based overlay targets. We will introduce a new method to create a reference overlay map, based on metrology data using multiple wavelengths and polarization settings. A similar approach is developed for the wafer alignment step. The overlay fingerprint correction using linear or high order correction per exposure (CPE) has a large amount of parameters. It is critical to balance the metrology noise with the ultimate correction model and the related metrology sampling scheme. Similar approach is needed for the wafer align step. Both for overlay control as well as alignment we have developed methods which include efficient use of metrology time, available for an in the litho-cluster integrated

  16. Integrated scatterometry for tight overlay and CD control to enable 20-nm node wafer manufacturing.

    NASA Astrophysics Data System (ADS)

    Benschop, Jos; Engelen, Andre; Cramer, Hugo; Kubis, Michael; Hinnen, Paul; van der Laan, Hans; Bhattacharyya, Kaustuve; Mulkens, Jan

    2013-04-01

    The overlay, CDU and focus requirements for the 20nm node can only be met using a holistic lithography approach whereby full use is made of high-order, field-by-field, scanner correction capabilities. An essential element in this approach is a fast, precise and accurate in-line metrology sensor, capable to measure on product. The capabilities of the metrology sensor as well as the impact on overlay, CD and focus will be shared in this paper.

  17. Immersion and dry scanner extensions for sub-10nm production nodes

    NASA Astrophysics Data System (ADS)

    Weichselbaum, Stefan; Bornebroek, Frank; de Kort, Toine; Droste, Richard; de Graaf, Roelof F.; van Ballegoij, Rob; Botter, Herman; McLaren, Matthew G.; de Boeij, Wim P.

    2015-03-01

    Progressing towards the 10nm and 7nm imaging node, pattern-placement and layer-to-layer overlay requirements keep on scaling down and drives system improvements in immersion (ArFi) and dry (ArF/KrF) scanners. A series of module enhancements in the NXT platform have been introduced; among others, the scanner is equipped with exposure stages with better dynamics and thermal control. Grid accuracy improvements with respect to calibration, setup, stability, and layout dependency tighten MMO performance and enable mix and match scanner operation. The same platform improvements also benefit focus control. Improvements in detectability and reproducibility of low contrast alignment marks enhance the alignment solution window for 10nm logic processes and beyond. The system's architecture allows dynamic use of high-order scanner optimization based on advanced actuators of projection lens and scanning stages. This enables a holistic optimization approach for the scanner, the mask, and the patterning process. Productivity scanner design modifications esp. stage speeds and optimization in metrology schemes provide lower layer costs for customers using immersion lithography as well as conventional dry technology. Imaging, overlay, focus, and productivity data is presented, that demonstrates 10nm and 7nm node litho-capability for both (immersion & dry) platforms.

  18. Development of a new high transmission phase shift mask technology for 10 nm logic node

    NASA Astrophysics Data System (ADS)

    Faure, Thomas; Sakamoto, Yoshifumi; Toda, Yusuke; Badger, Karen; Seki, Kazunori; Lawliss, Mark; Isogawa, Takeshi; Zweber, Amy; Kagawa, Masayuki; Wistrom, Richard; Xu, Yongan; Lobb, Granger; Viswanathan, Ramya; Hu, Lin; Inazuki, Yukio; Nishikawa, Kazuhiro

    2016-05-01

    In this paper we will describe the development of a new 12% high transmission phase shift mask technology for use with the 10 nm logic node. The primary motivation for this work was to improve the lithographic process window for 10 nm node via hole patterning by reducing the MEEF and improving the depth of focus (DOF). First, the simulated MEEF and DOF data will be compared between the 6% and high T PSM masks with the transmission of high T mask blank varying from 12% to 20%. This resulted in selection of a 12% transmission phase shift mask. As part of this work a new 12% attenuated phase shift mask blank was developed. A detailed description and results of the key performance metrics of the new mask blank including radiation durability, dry etch properties, film thickness, defect repair, and defect inspection will be shared. In addition, typical mask critical dimension uniformity and mask minimum feature size performance for 10 nm logic node via level mask patterns will be shown. Furthermore, the results of work to optimize the chrome hard mask film properties to meet the final mask minimum feature size requirements will be shared. Lastly, the key results of detailed lithographic performance comparisons of the process of record 6% and new 12% phase shift masks on wafer will be described. The 12% High T blank shows significantly better MEEF and larger DOF than those of 6% PSM mask blank, which is consistent with our simulation data.

  19. Challenges in the Plasma Etch Process Development in the sub-20nm Technology Nodes

    NASA Astrophysics Data System (ADS)

    Kumar, Kaushik

    2013-09-01

    For multiple generations of semiconductor technologies, RF plasmas have provided a reliable platform for critical and non-critical patterning applications. The electron temperature of processes in a RF plasma is typically several electron volts. A substantial portion of the electron population is within the energy range accessible for different types of electron collision processes, such as electron collision dissociation and dissociative electron attachment. When these electron processes occur within a small distance above the wafer, the neutral species, radicals and excited molecules, generated from these processes take part in etching reactions impacting selectivity, ARDE and micro-loading. The introduction of finFET devices at 22 nm technology node at Intel marks the transition of planar devices to 3-dimensional devices, which add to the challenges to etch process in fabricating such devices. In the sub-32 nm technology node, Back-end-of-the-line made a change with the implementation of Trench First Metal Hard Mask (TFMHM) integration scheme, which has hence gained traction and become the preferred integration of low-k materials for BEOL. This integration scheme also enables Self-Aligned Via (SAV) patterning which prevents via CD growth and confines via by line trenches to better control via to line spacing. In addition to this, lack of scaling of 193 nm Lithography and non-availability of EUV based lithography beyond concept, has placed focus on novel multiple patterning schemes. This added complexity has resulted in multiple etch schemes to enable technology scaling below 80 nm Pitches, as shown by the memory manufacturers. Double-Patterning and Quad-Patterning have become increasingly used techniques to achieve 64 nm, 56 nm and 45 nm Pitch technologies in Back-end-of-the-line. Challenges associated in the plasma etching of these multiple integration schemes will be discussed in the presentation. In collaboration with A. Ranjan, TEL Technology Center, America

  20. Analysis of multi-e-beam lithography for cutting layers at 7-nm node

    NASA Astrophysics Data System (ADS)

    Zhao, Lijun; Wei, Yayi; Ye, Tianchun

    2016-10-01

    Technology node scaling to the 7-nm node, self-aligned quadruple patterning plus cutting/blocking is widely adopted as a lithography solution for critical line and space layers. The cutting/blocking process can be done by 193i or EUV lithography. Due to resolution requirements in both X/Y directions, 193i requires two or three exposures to accomplish the cutting/blocking process, and the overlay among the exposures must be controlled very tightly. EUV can accomplish cutting/blocking by one exposure. However, the extremely high cost of EUV tool and mask, together with not so high throughput, appears to suggest that EUV lithography is not a cost-effective solution. From both technical and cost perspectives, we explore the possibility of using multi-e-beam lithography as an alternative solution for 7-nm cutting/blocking layers. First, we analyze design rules, which define resolution and overlay requirements of the cutting/blocking patterns. Then we report the lithography performance data of our leading-edge multi-e-beam tool and compare them with the cutting/blocking requirements. Finally, we do the cost analysis. Our results indicate that multi-e-beam lithography has a cost per wafer per layer advantage if it can commit a resolution of 32-nm half pitch, an overlay of <2.8 nm, and a throughput of 5 to 10 wph.

  1. Gate patterning in 14 nm and beyond nodes: from planar devices to three dimensional Finfet devices

    NASA Astrophysics Data System (ADS)

    Meng, Lingkuan; Hong, Peizhen; He, Xiaobin; Li, Chunlong; Li, Junjie; Li, Junfeng; Zhao, Chao; Wei, Yayi; Yan, Jiang

    2016-01-01

    In this work, we investigated the challenges encountered in 14 nm node Finfet gate patterning. The patterning process was originated from a 22 nm planar device, in which a SiO2/Si3N4/SiO2 (ONO) multilayer was used as an etch mask. To accommodate with the 3D nature of Finfet structures in 14 nm node, the thickness of Si3N4 has been increased in the investigated process. We found out that the standard ONO mask etch process was no longer effective for gate patterning in 3D Finfet devices. It was observed that the etched mask sidewall was significantly more tapered than that in planar devices, resulting in the final CDs of both mask and dummy gate far wider than those of the planar devices. In order to achieve a desirable gate CD, the formation mechanism causing a severely tapered mask profile was first investigated. Our results suggested that redeposition effect of the etch products on the sidewall played a significant role in controlling etched mask sidewall angle. Then, we proposed a two-step etch process which can improve the anisotropy of ONO mask etch and obtain a steep etch profile with a desirable CD. Using this process, a gate CD of 20 nm was successfully achieved with a desirable profile and a smooth sidewall. Our results have demonstrated that the newly developed etch process is very robust and has a wide process window.

  2. The SEMATECH Berkeley microfield exposure tool: learning a the 22-nm node and beyond

    SciTech Connect

    Naulleau, Patrick; Anderson, Christopher; Baclea-an, Lorie-Mae; Denham, Paul; George, Simi; Goldberg, Kenneth A.; Goldstein, Michael; Hoef, Brian; Hudyma, Russ; Jones, Gideon; Koh, Chawon; La Fontaine, Bruno; McClinton, Brittany; Miyakawa, Ryan; Montgomery, Warren; Roller, John; Wallow, Tom; Wurm, Stefan

    2009-02-16

    Microfield exposure tools (METs) continue to playa dominant role in the development of extreme ultraviolet (EUV) resists. One of these tools is the SEMATECH Berkeley 0.3-NA MET operating as a SEMATECH resist and mask test center. Here we present an update summarizing the latest resist test and characterization results. The relatively small numerical aperture and limited illumination settings expected from 1st generation EUV production tools make resist resolution a critical issue even at the 32-nm node. In this presentation, sub 22 nm half pitch imaging results of EUV resists are reported. We also present contact hole printing at the 30-nm level. Although resist development has progressed relatively well in the areas of resolution and sensitivity, line-edge-roughness (LER) remains a significant concern. Here we present a summary of recent LER performance results and consider the effect of system-level contributors to the LER observed from the SEMA TECH Berkeley microfield tool.

  3. Development and characterization of advanced phase-shift mask blanks for 14nm node and beyond

    NASA Astrophysics Data System (ADS)

    Kim, Chang-Jun; Jang, Kyu-Jin; Choi, Min-Ki; Yang, Chul-Kyu; Lee, Jae-Chul; Lee, Jong-Keun; Kang, Byung-Sun; Lee, Jong-Hwa; Shin, Cheol; Nam, Kee-Soo

    2014-10-01

    Recently, the development of semiconductor process for 14nm node and beyond is in progress. The mask-making process demands higher resolution and CD accuracy to meet requirements. Current conventional ArF PSM has several problems such as higher 3D effect and higher loading effect due to the thicker film. These problems cause the CD performance degradation. This study is about the manufacturing of advance ArF PSM, which has thinner phase shift layer and higher etch rate Cr absorber film. The thickness of phase shift film is less than 60nm and the total etch-time for the Cr absorber film is reduced more than 30%. The mask CD performance of this new blank was evaluated in terms of CD uniformity, CD linearity, pattern resolution, and loading effect and so on. Adapting to this new blank, we can achieve better CD performance by reducing the loading effect. In addition, the chemical durability and ArF exposure durability were also improved. In conclusion, the mask-making process margin was extended by using this new blank, and it is expected that we can achieve the required specifications for 14nm node and beyond.

  4. Immersion defectivity study with volume production immersion lithography tool for 45 nm node and below

    NASA Astrophysics Data System (ADS)

    Nakano, Katsushi; Nagaoka, Shiro; Yoshida, Masato; Iriuchijima, Yasuhiro; Fujiwara, Tomoharu; Shiraishi, Kenichi; Owa, Soichi

    2008-03-01

    Volume production of 45nm node devices utilizing Nikon's S610C immersion lithography tool has started. Important to the success in achieving high-yields in volume production with immersion lithography has been defectivity reduction. In this study we evaluate several methods of defectivity reduction. The tools used in our defectivity analysis included a dedicated immersion cluster tools consisting of a Nikon S610C, a volume production immersion exposure tool with NA of 1.3, and a resist coater-developer LITHIUS i+ from TEL. In our initial procedure we evaluated defectivity behavior by comparing on a topcoat-less resist process to a conventional topcoat process. Because of its simplicity the topcoatless resist shows lower defect levels than the topcoat process. In a second study we evaluated the defect reduction by introducing the TEL bevel rinse and pre-immersion bevel cleaning techniques. This technique was shown to successfully reduce the defect levels by reducing the particles at the wafer bevel region. For the third defect reduction method, two types of tool cleaning processes are shown. Finally, we discuss the overall defectivity behavior at the 45nm node. To facilitate an understanding of the root cause of the defects, defect source analysis (DSA) was applied to separate the defects into three classes according to the source of defects. DSA analysis revealed that more than 99% of defects relate to material and process, and less than 1% of the defects relate to the exposure tool. Material and process optimization by collaborative work between exposure tool vendors, track vendors and material vendors is a key for success of 45nm node device manufacturing.

  5. Mask and wafer cost of ownership (COO) from 65 to 22 nm half-pitch nodes

    NASA Astrophysics Data System (ADS)

    Hughes, Greg; Litt, Lloyd C.; Wüest, Andrea; Palaiyanur, Shyam

    2008-05-01

    Anticipating the cost of ownership (COO) of different lithography approaches into the future is an act of faith. It requires that one believe that all of the lithographic problems with next generation lithography (NGL) approaches will be sufficiently resolved to support the production of manufacturing wafers. This paper assumes that all of the necessary technologies will be available in the future and that the cost of the components can be extrapolated from historic cost trends. Mask and wafer costs of a single critical lithography layer for the 65, 45, 32 and 22 nm half-pitch (HP) nodes will be compared for immersion, double process (DP), double expose (DE), extreme ultraviolet (EUV), and imprint technologies. The mask COO analysis assumes that the basic yield of an optical mask is constant from node to node and that the infrastructure that allows this performance will be in place when the technologies are needed. The primary differences in mask costs among lithography approaches are driven by the patterning write time and materials. The wafer COO is driven by the mask cost (for the low wafer-per-mask use case), the lithography tool cost, and the effective wafers per hour (wph) for the lithography approach being considered.

  6. Electron beam mask writer EBM-9500 for logic 7nm node generation

    NASA Astrophysics Data System (ADS)

    Matsui, Hideki; Kamikubo, Takashi; Nakahashi, Satoshi; Nomura, Haruyuki; Nakayamada, Noriaki; Suganuma, Mizuna; Kato, Yasuo; Yashima, Jun; Katsap, Victor; Saito, Kenichi; Kobayashi, Ryoei; Miyamoto, Nobuo; Ogasawara, Munehiro

    2016-10-01

    Semiconductor scaling is slowing down because of difficulties of device manufacturing below logic 7nm node generation. Various lithography candidates which include ArF immersion with resolution enhancement technology (like Inversed Lithography technology), Extreme Ultra Violet lithography and Nano Imprint lithography are being developed to address the situation. In such advanced lithography, shot counts of mask patterns are estimated to increase explosively in critical layers, and then it is hoped that multi beam mask writer (MBMW) is released to handle them within realistic write time. However, ArF immersion technology with multiple patterning will continue to be a mainstream lithography solution for most of the layers. Then, the shot counts in less critical layers are estimated to be stable because of the limitation of resolution in ArF immersion technology. Therefore, single beam mask writer (SBMW) can play an important role for mask production still, relative to MBMW. Also the demand of SBMW seems actually strong for the logic 7nm node. To realize this, we have developed a new SBMW, EBM-9500 for mask fabrication in this generation. A newly introduced electron beam source enables higher current density of 1200A/cm2. Heating effect correction function has also been newly introduced to satisfy the requirements for both pattern accuracy and throughput. In this paper, we will report the configuration and performance of EBM-9500.

  7. Efficient large volume data preparation for electron beam lithography for sub-45nm node

    NASA Astrophysics Data System (ADS)

    Choi, Kang-Hoon; Gutsch, Manuela; Freitag, Martin; Hohle, Christoph; Martin, Luc; Bayle, Sebastien; Manakli, Serdar; Schiavone, Patrick

    2011-11-01

    A new correction approach was developed to improve the process window of electron beam lithography and push its resolution at least one generation further using the same exposure tool. An efficient combination of dose and geometry modulation is implemented in the commercial data preparation software, called Inscale®, from Aselta Nanographics. Furthermore, the electron Resolution Improvement Feature (eRIF) is tested, which is based on the dose modulation and multiple-pass exposure, for not only overcoming the narrow resist process windows and disability of exposure tool but also more accurate correction of exposure data in the application of sub-35nm regime. Firstly, we are demonstrating the newly developed correction method through the comparison of its test exposure and the one with conventional dose modulation method. Secondly, the electron Resolution Improvement Feature is presented with the test application for complementary exposure and with the application of real design, specifically for sub-30nm nodes. Finally, we discuss the requirements of data preparation for the practical applications in e-beam lithography, especially for future technology nodes.

  8. Across scanner platform optimization to enable EUV lithography at the 10-nm logic node

    NASA Astrophysics Data System (ADS)

    Mulkens, Jan; Karssenberg, Jaap; Wei, Hannah; Beckers, Marcel; Verstappen, Leon; Hsu, Stephen; Chen, Guangqin

    2014-04-01

    EUV lithography is expected to be introduced in volume manufacturing at the 10-nm and 7-nm node. Especially in these first EUV nodes, critical layer patterning will be balanced with the use of ArF immersion. As a consequence a good overlay and placement matching between both lithography methods becomes an enabling factor for EUV. In this paper we present an integral method to optimize critical layer patterning across the EUV and ArF scanner platform, such that good overlay and device pattern placement is achieved. It is discussed that besides classical overlay control methods, also the optimization of the ArF and EUV imaging steps is needed. Best matching is achieved by applying high-order field-to-field overlay corrections for both imaging and overlay. The lithography architecture we build for these higher order corrections connects the dynamic scanner actuators with the angle resolved scatterometer via a separate computational application server. Improvements of CD uniformity are based on source mask optimization for EUV combined with CD optimization using freeform intra-field dose actuator in the immersion scanner.

  9. Defect avoidance for EUV photomask readiness at the 7 nm node

    NASA Astrophysics Data System (ADS)

    Qi, Zhengqing John; Rankin, Jed; Narita, Eisuke; Kagawa, Masayuki

    2016-05-01

    Several challenges hinder extreme ultraviolet lithography (EUVL) photomask fabrication and its readiness for high volume manufacturing (HVM). The lack in availability of pristine defect-free blanks as well as the absence of a robust mask repair technique mandates defect mitigation through pattern shift for the production of defect-free photomasks. The work presented here provides a comprehensive look at pattern shift implementation to intersect EUV HVM for the 7 nm technology node. An empirical error budget to compensate for measurement variability and errors, based on the latest HVM inspection and write tool capabilities, is first established and then experimentally verified. The validated error budget is applied to 20 representative EUV blanks and pattern shift is performed on fully functional 7 nm node chip designs. The probability of defect-free masks is explored for various layers, including metal, contact, and gate cut layers. From these results, an assessment is made on the current viability of defect-free EUV masks and what is required to construct a complete defect-free EUV mask set.

  10. Process window simulation study with immersion lithography for 45-nm technology node

    NASA Astrophysics Data System (ADS)

    Park, Oseo; Gutmann, Alois; Neumueller, Walter; Back, David

    2004-05-01

    As the potentials of experimental studies are still limited, a predictive resist image simulation of Immersion lithography is very important for a better understanding of the technology. One of the most critical issues in Immersion lithography is the description of the influence of immersion which is the presence of a uniform liquid layer between the last objective lens and the photo resist, on optical lithography. It enables the real part of the index of refraction in the image space, and the numerical aperture of the projection lens, to be greater than unity. Therefore, it is virtually involves Maxwell vector solution approach, including polarization effects and arbitrary thin film multi-layers. This paper discusses the improvement in process window afforded by immersion under a variety of conditions, including 193nm and 157nm, Off-axis illumination, Attenuated Phase Shift Mask for 65nm and 45nm technology node. Comparisons with dry and liquid lithography simulations are used to evaluate the availability and the performance of the proposed approach. The implemented resist simulation approach is examined the impact to the process window of variations in liquid refractive index as well.

  11. UV-NIL templates for the 22nm node and beyond

    NASA Astrophysics Data System (ADS)

    Hiraka, Takaaki; Yusa, Satoshi; Fujii, Akiko; Sasaki, Shiho; Itoh, Kimio; Toyama, Nobuhito; Kurihara, Masaaki; Mohri, Hiroshi; Hayashi, Naoya

    2007-10-01

    NIL (nano-imprint lithography) is expected as one of the lithographic candidates for 32nm node and beyond. Recently, the small line edge roughness (LER) as well as the potentially high resolution that will ensure no-OPC mask feature is attracting many researchers. However, the NIL needs 1X patterns on template and a transit from 4X to 1X is a big and hard technology jump for the mask industry. The fine resolution pattern making on the template is one of the most critical issues for the realization of NIL. In this paper, as a continuation of our previous works 1-5, we have achieved further resolution by optimizing the materials, their thicknesses, the developing and the etching processes, as well as the writing parameters of the 100keV SB (spot beam) writer. At the best resolved point on the template, resolutions down to hp (half pitch) 18nm on dense line patterns, hp20nm on dense hole patterns, and hp26nm on dense dot patterns were confirmed. Concerning stable pattern resolution over a certain field area, we evaluated pattern resolution through over a 250um square area, which we think would be adequate for initial imprint tests. For the 250μm square area, we confirmed pattern resolution of hp24nm for dense line patterns and hp32nm for dense hole patterns. In addition, we have studied resolution limit of the 50keV VSB (variable shaped beam) photomask production writing tools, which have been commonly used tools in the 4X photomask manufacturing for larger field size patterning. Materials, process conditions and parameters acquired through the 100keV SB process were implanted, and we could fabricate templates with hp32nm dense line patterns, with acceptable full chip uniformity and writing time. We also studied the imprint capability, and fabricated a template with fine features and imprinted it onto a wafer. As a result, we could transfer hp24nm dense line patterns, hp24nm dense hole patterns, and hp32nm dense dot patterns onto the wafer.

  12. Development and characterization of a thinner binary mask absorber for 22-nm node and beyond

    NASA Astrophysics Data System (ADS)

    Faure, Tom; Badger, Karen; Kindt, Louis; Kodera, Yutaka; Komizo, Toru; Kondo, Shinpei; Mizoguchi, Takashi; Nemoto, Satoru; Seki, Kazunori; Senna, Tasuku; Wistrom, Richard; Zweber, Amy; Nishikawa, Kazuhiro; Inazuki, Yukio; Yoshikawa, Hiroki

    2010-09-01

    The lithography challenges posed by the 22 nm node continue to place stringent requirements on photomasks. The dimensions of the mask features continue to shrink more deeply into the sub-wavelength scale. In this regime residual mask electromagnetic field (EMF) effects due to mask topography can degrade the imaging performance of critical mask patterns by degrading the common lithography process window and by magnifying the impact of mask errors or MEEF. Based on this, an effort to reduce the mask topography effect by decreasing the thickness of the mask absorber was conducted. In this paper, we will describe the results of our effort to develop and characterize a binary mask substrate with an absorber that is approximately 20-25% thinner than the absorber on the current Opaque MoSi on Glass (OMOG) binary mask substrate. For expediency, the thin absorber development effort focused on using existing absorber materials and deposition methods. It was found that significant changes in film composition and structure were needed to obtain a substantially thinner blank while maintaining an optical density of 3.0 at 193 nm. Consequently, numerous studies to assess the mask making performance of the thinner absorber material were required and will be described. During these studies several significant mask making advantages of the thin absorber were discovered. The lower film stress and thickness of the new absorber resulted in improved mask flatness and up to a 60% reduction in process-induced mask pattern placement change. Improved cleaning durability was another benefit. Furthermore, the improved EMF performance of the thinner absorber [1] was found to have the potential to relieve mask manufacturing constraints on minimum opaque assist feature size and opaque corner to corner gap. Based on the results of evaluations performed to date, the thinner absorber has been found to be suitable for use for fabricating masks for the 22 nm node and beyond.

  13. Mask roughness and its implications for LER at the 22- and 16-nm nodes

    SciTech Connect

    Naulleau, Patrick; George, Simi A.; McClinton, Brittany M.

    2010-02-16

    Line-edge roughness (LER) remains the most significant challenge facing the development of extreme ultraviolet (EUV) resist. The mask, however, has been found to be a significant contributor to image-plane LER. This has long been expected based on modeling and has more recently been demonstrated experimentally. Problems arise from both mask-absorber LER as well as mask multilayer roughness leading to random phase variations in the reflected beam and consequently speckle. Understanding the implications this has on mask requirements for the 22-nm half pitch node and below is crucial. Modeling results indicate a replicated surface roughness (RSR) specification of 50 pm and a ruthenium capping layer roughness specification of 440 pm. Moreover, modeling indicates that it is crucial to achieve the current ITRS specifications for mask absorber LER which is significantly smaller than current capabilities.

  14. Optimum Biasing for 45 nm Node Chromeless and Attenuated Phase Shift Mask

    NASA Astrophysics Data System (ADS)

    Kang, Young-Min; An, Ilsin; Shin, Dong-Soo; Oh, Hye-Keun

    2008-09-01

    Resolution enhancement technology (RET) refers to a technique that extends the usable resolution of an imaging system without decreasing the wavelength of light or increasing the numerical aperture (NA) of the imaging tool. Off-axis illumination (OAI) and a phase shift mask (PSM) are essentially accompanied by optical proximity correction (OPC) for semiconductor device manufacturing nowadays. A chromeless PSM is compared with an attenuated PSM (att.PSM) to generate a 45 nm dense line and space pattern. To obtain the best possible resolution, a suitable OPC is required with PSM and the most common application of OPC is the use of bias. An optical system with a high NA, a strong OAI, and a proper polarization can decrease k1 to a value well below 0.3. A chromeless PSM has various advantages over alternating PSM such as the lack of necessity for double exposure, small pattern displacement, and the lack of critical dimension (CD) error caused by intensity imbalance. However, a chromeless PSM has some disadvantages. In the case of a 100% transmittance pure chromeless PSM, there is no shading material that is usually deposited on the line pattern for both att.PSM and alternating PSM to control linewidth. Because there is no shading material for such a chromeless PSM, the required resist CD has to be obtained using phase only and it is difficult to control the resist CD through pitch. As expected, a chromeless PSM needs a smaller dose than an att.PSM to generate a desired 45 nm CD with a 1.0 NA. Our simulation results show that a 10 nm bias is optimum for chromeless PSMs. We demonstrate that chromeless PSM and att.PSM technology can be used to achieve a 45 nm node with optimum biased OPC.

  15. Optimum biasing for 45 nm node chromeless and attenuated phase shift mask

    NASA Astrophysics Data System (ADS)

    Kang, Young-Min; Oh, Hye-Keun

    2008-03-01

    Resolution enhancement technology (RET) refers to a technique that extends the usable resolution of an imaging system without decreasing the wavelength of light or increasing the numerical aperture (NA) of the imaging tool. Offaxis illumination (OAI) and a phase shift mask (PSM) are essentially accompanied by optical proximity correction (OPC) for semiconductor device manufacturing nowadays. A chromeless PSM (CLM or CPL) is compared to an attenuated PSM (att.PSM) to make 45 nm dense line and space pattern. To obtain the best possible resolution, a proper OPC is required with CPL and the most common application of OPC technique is the use of space bias. The optical system with a high numerical aperture (NA), a strong OAI, and a proper polarization can decrease the k1 value well below 0.3. CPL has various advantages over alternating PSM such as no necessity of double exposure, small pattern displacement, and no CD error caused by the intensity imbalance. But CPL has some disadvantages. In the case of 100 % transmittance pure CPL, there is no shading material that is usually deposited on the line pattern for both att.PSM and alternating PSM to control the line width. Because of no shading material for CPL, the required resist critical dimension (CD) has to be obtained by using phase only and it is difficult to control the resist CD through pitch. As expected, CPL needs smaller dose than att.PSM to make the desired 45 nm CD with 0.94 NA. Our simulation results showed that 10 nm negative bias is optimum for CPL mask. We demonstrated that CPL mask and att.PSM technology can be used to make 45 nm node by the negative space bias.

  16. Characterization of bending CD errors induced by resist trimming in 65 nm node and beyond

    NASA Astrophysics Data System (ADS)

    Gu, Yiming; Friedmann, James B.; Ukraintsev, Vladimir; Zhang, Gary; Wolf, Thomas; Lii, Tom; Jackson, Ricky

    2007-03-01

    Resist trimming is a technique that is often used to close the gap between line widths which can be repeatedly printed with currently available lithography tools and the desired transistor gate length. For the 65-nm node, the resist line width delivered at pattern is between 60 to 70 nm while the final transistor gate length is usually targeted between 35 to 45 nm. The 15 to 35 nm critical dimension (CD) difference can be bridged by resist trimming. Due to the stringent gate CD budget, a resist trimming process should ideally have the following characteristics: i) no degradation in CD uniformity; ii) no damage in pattern fidelity; iii) controllable CD trim rate with good linearity; and iv) no degradation in line edge roughness (LER) or line width roughness (LWR). Unfortunately, a realistic resist trimming process is never perfect. In particular, resist consumption and the resultant internal stress build-up during resist trimming can lead to resist line bending. The effect of bent resist lines is a higher post-etch CD and significantly degraded local CD uniformity (LCDU). In order to reduce resist bending CD errors (defined as the difference between the post-etch CD and the design CD due to resist bending after trimming) several useful procedures either in layout or in processes are presented. These procedures include: i) symmetrically aligning gates to contact pads and field connecting poly in the circuit layout; ii) enlarging the distance between contact pad (or field connecting poly) to active area within the limits of the design rules (DR) and silicon real estate; iii) adding assist features to the layout within the DR limits; iv) minimizing resist thickness; and v) applying special plasma cure before resist trim.

  17. Resolution enhancement technology for ArF dry lithography at 65 nm node

    NASA Astrophysics Data System (ADS)

    Gao, Songbo; Li, Yanqui

    2007-12-01

    The performance of ArF dry lithography at 65 nm node was studied together with RET. Commercial software Prolith 9.0 and in-house-software MicroCruiser 5.0 were used for simulation and mass data process. The combination of different phase shift mask (PSM), off axis illumination and patterns were chosen for this research. The image contrast, nominal image log-slope (NILS), depth of focus (DOF) and resist profile were considered to judge the lithography performance. The results show that the combination of small sigma conventional illumination and alternating phase shift mask (alt- PSM) is the best choice for Line/Space (L/S) patterns of different pitches. The isolate L/S pattern can be imaged with a large image contrast and DOF if alt-PSM and several kinds of illumination (such as small sigma, annular, and quasar illumination) are joined together. For semi-dense and dense L/S pattern, good lithography performance can be reached by using only small sigma illumination and alt-PSM. The impact of polarization illumination was also considered. Y-polarization illumination enhances the image contrast, NILS and the DOF for most conditions. The Z-orientation resist image fidelity was studied by optimization of the double bottom anti-reflection coating (DBARC) and resist thickness. This research predicts that 65 nm L/S pattern can be fabricated by current ArF dry lithography system.

  18. Improving CD uniformity using MB-MDP for 14nm node and beyond

    NASA Astrophysics Data System (ADS)

    Kim, Byung G.; Choi, Jin; Park, Jisoong; Jeon, Chan U.; Watson, Sterling; Adamov, Anthony; Pack, Bob; Bork, Ingo

    2012-11-01

    Model-Based Mask Data Preparation (MB-MDP) has been discussed in the literature for its benefits in reducing mask write times [1][2]. By being model based (i.e., simulation based), overlapping shots, per-shot dose modulation, and circular and other character projection shots are enabled. This reduces variable shaped beam (VSB) shot count for complex mask shapes, and particularly ideal ILT shapes [3]. In this paper, the authors discuss another even more important aspect of MB-MDP. MB-MDP enhances CD Uniformity (CDU) on the mask, and therefore on the wafer. Mask CDU is improved for sub-80nm features on mask through the natural increase in dose that overlapping provides, and through per-shot dose modulation. The improvement in CDU is at the cost of some write times for the less complex EUV masks with only rectangular features. But these masks do not have the basis of large write times that come from complex SRAFs. For ArF masks for the critical layers at the 20nm logic node and below, complex SRAFs are unavoidable. For these shapes, MB-MDP enhances CDU while simultaneously reducing write times. Simulated and measured comparison of conventional methodology and MB-MDP methodology are presented.

  19. Low-contrast photoresist development model for OPC application at 10nm node

    NASA Astrophysics Data System (ADS)

    Wu, Cheng-En; Wei, David; Zhang, Charlie; Song, Hua

    2015-03-01

    The Optical Proximity Correction (OPC) model, a key to process yield in the mask synthesis flow, is getting more and more complicated and challenging at advanced technology nodes (1X nm). To achieve accurate critical dimension (CD) prediction and model robustness on varied designed patterns, a rigorously tuned compact model (RTCM) [1] that takes the photoresist chemical effects into considerations is strongly desired. A lithography process consists of three main stages: Exposure, Post-Exposure Bake (PEB), and Photoresist Development. Each stage is characterized by its fundamental physics or chemistry that governs the process of illumination induced photo-acid generation, thermally activated chemical reaction-diffusion, and developer dependent photoresist dissolution, respectively. The final resist profile is determined by the process details of all these stages directly or indirectly. For an ideal resist that the development contrast approaches infinity, resist development is aptly represented by a threshold model applied to the PEB latent image (acid or inhibitor concentration). So the quality of OPC modeling is largely determined by the fidelity of PEB latent image [2,3]. However, for some types of resist and developer used in Negative Tone Development (NTD), the development contrast shows a long tail without a sharp transition. For such low-contrast resist, the developed resist profile is no longer described well by the equilevel surface of PEB latent image. Going beyond the threshold approximation, we start from the fundamental equations of resist development physics and analyze the time evolution of development front that determines the resist profile. In this paper, a new compact model is derived to catch the main physics in resist Development, which is also simple and computationally efficient to suit for OPC applications. Comparison with S-LITHO rigorous solutions and real-wafer experiments with 1D and 2D test patterns have showed that the new compact model

  20. Hybrid OPC modeling with SEM contour technique for 10nm node process

    NASA Astrophysics Data System (ADS)

    Hitomi, Keiichiro; Halle, Scott; Miller, Marshal; Graur, Ioana; Saulnier, Nicole; Dunn, Derren; Okai, Nobuhiro; Hotta, Shoji; Yamaguchi, Atsuko; Komuro, Hitoshi; Ishimoto, Toru; Koshihara, Shunsuke; Hojo, Yutaka

    2014-03-01

    Hybrid OPC modeling is investigated using both CDs from 1D and simple 2D structures and contours extracted from complex 2D structures, which are obtained by a Critical Dimension-Scanning Electron Microscope (CD-SEM). Recent studies have addressed some of key issues needed for the implementation of contour extraction, including an edge detection algorithm consistent with conventional CD measurements, contour averaging and contour alignment. Firstly, pattern contours obtained from CD-SEM images were used to complement traditional site driven CD metrology for the calibration of OPC models for both metal and contact layers of 10 nm-node logic device, developed in Albany Nano-Tech. The accuracy of hybrid OPC model was compared with that of conventional OPC model, which was created with only CD data. Accuracy of the model, defined as total error root-mean-square (RMS), was improved by 23% with the use of hybrid OPC modeling for contact layer and 18% for metal layer, respectively. Pattern specific benefit of hybrid modeling was also examined. Resist shrink correction was applied to contours extracted from CD-SEM images in order to improve accuracy of the contours, and shrink corrected contours were used for OPC modeling. The accuracy of OPC model with shrink correction was compared with that without shrink correction, and total error RMS was decreased by 0.2nm (12%) with shrink correction technique. Variation of model accuracy among 8 modeling runs with different model calibration patterns was reduced by applying shrink correction. The shrink correction of contours can improve accuracy and stability of OPC model.

  1. Continuous wave and passively Q-switched laser performance of Nd:LuxGd3-xGa5O12 crystal at 1062 nm

    NASA Astrophysics Data System (ADS)

    Fu, X. W.; Jia, Z. T.; Yang, H.; Li, Y. B.; Yuan, D. S.; Zhang, B. T.; Dong, C. M.; He, J. L.; Tao, X. T.

    2012-12-01

    Continuous wave (CW) and passively Q-switched (PQS) laser properties at 1062 nm of the Nd:LuxGd3-xGa5O12 (Nd:LGGG) disordered crystal have been demonstrated. The doping concentrations of Nd3+ and Lu3+ in the as obtained crystal were measured to be 0.96 and 0.66 at.%, respectively. In the CW regime, the output power of 9.73 W was obtained with an optical-to-optical efficiency as high as 60.7% and slope efficiency of 61.2%. During the passively Q-switched operation, the maximum output power of 1.24 W was achieved under the absorbed pump power of 6.86 W. The maximum peak power of 14.20 kW and single pulse energy of 148 μJ were obtained with the Toc = 10% under the absorbed pump power of 6.36 W. The results are much better than those obtained with Nd:LGGG crystal doped with 13.6 at.% Lu3+ and 0.53 at.% Nd3+ ions.

  2. Estimate design sensitivity to process variation for the 14nm node

    NASA Astrophysics Data System (ADS)

    Landié, Guillaume; Farys, Vincent

    2016-03-01

    Looking for the highest density and best performance, the 14nm technological node saw the development of aggressive designs, with design rules as close as possible to the limit of the process. Edge placement error (EPE) budget is now tighter and Reticle Enhancement Techniques (RET) must take into account the highest number of parameters to be able to get the best printability and guaranty yield requirements. Overlay is a parameter that must be taken into account earlier during the design library development to avoid design structures presenting a high risk of performance failure. This paper presents a method taking into account the overlay variation and the Resist Image simulation across the process window variation to estimate the design sensitivity to overlay. Areas in the design are classified with specific metrics, from the highest to the lowest overlay sensitivity. This classification can be used to evaluate the robustness of a full chip product to process variability or to work with designers during the design library development. The ultimate goal is to evaluate critical structures in different contexts and report the most critical ones. In this paper, we study layers interacting together, such as Contact/Poly area overlap or Contact/Active distance. ASML-Brion tooling allowed simulating the different resist contours and applying the overlay value to one of the layers. Lithography Manufacturability Check (LMC) detectors are then set to extract the desired values for analysis. Two different approaches have been investigated. The first one is a systematic overlay where we apply the same overlay everywhere on the design. The second one is using a real overlay map which has been measured and applied to the LMC tools. The data are then post-processed and compared to the design target to create a classification and show the error distribution. Figure:

  3. Mandrel-based patterning: density multiplication techniques for 15nm nodes

    NASA Astrophysics Data System (ADS)

    Bencher, Chris; Dai, Huixiong; Miao, Liyan; Chen, Yongmei; Xu, Ping; Chen, Yijian; Oemardani, Shiany; Sweis, Jason; Wiaux, Vincent; Hermans, Jan; Chang, Li-Wen; Bao, Xinyu; Yi, He; Wong, H.-S. Philip

    2011-04-01

    In many ways, sidewall spacer double patterning has created a new paradigm for lithographic roadmaps. Instead of using lithography as the principal process for generating device features, the role of lithography becomes to generate a mandrel (a pre-pattern) off-of-which one will subsequently replicate patterns with various degrees of density multiplication. Under this new paradigm, the innovativeness of various density multiplication techniques is as critical to the scaling roadmap as the exposure tools themselves. Sidewall spacer double patterning was the first incarnation of mandrel based patterning; adopted quickly in NAND flash where layouts were simple and design space was focused. But today, the use of advanced automated decomposition tools are showing spacer based patterning solutions for very complex logic designs. Future incarnations can involve the use of laminated spacers to create quadruple patterning or by retaining the original mandrel as a method to obtain triple patterning. Directed self-assembly is yet another emerging embodiment of mandrel based patterning, where selfseparating polymers are registered and guided by the physical constraint of a mandrel or by chemical pre-pattern trails formed onto the substrate. In this summary of several bodies of work, we will review several wafer level demonstrations, all of which use various forms of mandrel or stencil based density multiplication including sidewall spacer based double, triple and quadruple patterning techniques for lines, SADP for via multiplication, and some directed self-assembly results all capable of addressing 15nm technology node requirements and below. To address concerns surrounding spacer double patterning design restrictions, we show collaboration results with an EDA partner to demonstrate SADP capability for BEOL routing layers. To show the ultimate realization of SADP, we partner with IMEC on multiple demonstrations of EUV+SADP.

  4. Patterning of 90nm node flash contact hole with assist feature using KrF

    NASA Astrophysics Data System (ADS)

    Shim, Yeonah; Jun, Sungho; Choi, Jaeyoung; Choi, Kwangseon; Han, Jae-won; Wang, Kechang; McCarthy, John; Xiao, Guangming; Dai, Grace; Son, DongHwan; Zhou, Xin; Cecil, Thomas; Kim, David; Baik, KiHo

    2009-10-01

    Patterning of contact holes using KrF lithography system is one of the most challenging tasks for the sub-90nm technology node,. Contact hole patterns can be printed with a KrF lithography system using Off-Axis Illumination (OAI) such as Quasar or Quadrupole. However, such a source usually offers poor image contrast and poor depth of focus (DOF), especially for isolated contact holes. In addition to image contrast and DOF, circularity of hole shape is also an important parameter for device performance. Sub-resolution assist features (SRAF) can be used to improve the image contrast, DOF and circularity for isolated contact holes. Application of SRAFs, modifies the intensity profile of isolated features to be more like dense ones, improving the focal response of the isolated feature. The insertion of SRAFs in a contact design is most commonly done using rule-based scripting, where the initial rules for configuring the SRAFs are derived using a simulation tool to determining the distance of assist features to main feature, and the size and number of assist features to be used.. However in the case of random contact holes, rule-based SRAF placement is a nearly impossible task. To address this problem, an inverse lithography technique was successfully used to treat random contact holes. The impact of SRAF configuration on pattern profile, especially circularity and process margin, is demonstrated. It is also shown that the experimental data are easily predicted by calibrating aerial image simulation results. Finally, a methodology for optimizing SRAF rules using inverse lithography technology is described.

  5. Evaluation of ArF lithography for 45-nm node implant layers

    NASA Astrophysics Data System (ADS)

    Bailey, T. C.; Maynollo, J.; Perez, J. J.; Popova, I.; Zhang, B.

    2007-03-01

    Scaling of designs to the 45nm or future nodes presents challenges for KrF lithography. The purpose of this work was to explore several aspects of ArF lithography for implant layers. A comparison of dark loss seen in a KrF resist and TARC system to that seen in an ArF system showed significant differences. While the KrF resist yielded dark loss that varied with CD and pitch, the ArF resist showed very little dark loss and no significant variation through the design space. ArF resist were observed to have marginal adhesion to various substrates. Improvements in adhesion performance were shown by pre-treating the substrate with various processes, of which an ozone clean provided the best results. Optimization of the HMDS priming conditions also improved adhesion, and it was observed that the HMDS reaction proceeds at different rates on different subsatrates, which is particularly important for implant layers where the resist must adhere to both Si and SiO II. The effect of ArF resist profile with varying reflectivity swing position is shown, and some investigation into reflectivity optimization techniques was performed. Low-index ArF TARC was shown to reduce the CD variation over polysilicon topography, and wet developable BARC was demonstrated to provide consistent profiles on both Si and SiO II substrates. Finally, a comparison of ArF and KrF resists after As implant indicates that the ArF resist showed similar shrinkage performance to the KrF resist.

  6. Double dipole lithography for 65-nm node and beyond: a technology readiness review

    NASA Astrophysics Data System (ADS)

    Hsu, Stephen D.; Eurlings, Mark; Hendrickx, Eric; Van Den Broeke, Douglas J.; Chiou, Tsann-Bim; Chen, J. Fung; Laidig, Thomas L.; Shi, Xuelong; Finders, Jo

    2004-08-01

    Double Dipole Lithography (DDL) has been demonstrated to be capable of imaging complex 2D patterns for full-chip application. Due to inherently high aerial image contrast, we have found that there is strong potential for this technology to meet manufacturing line width roughness (LWR) and critical dimension uniformity (CDU) requirements for the 65nm node using ArF binary chrome masks or 6% attenuated phase shift mask (AttPSM). For patterning at k1 less than 0.35, DDL is a Resolution Enhancement Technology (RET) that offers an acceptable process window without resorting to costly hard phase shift masks. To use DDL for printing actual IC device patterns, the original design data must be converted into "vertical (V)" and "horizontal (H)" masks for the respective X and Y dipole exposures. An improved model-based DDL mask data processing steps has been demonstrated that it is possible to convert complex logic and memory data to X-Y dipole exposure compatible layout. Due to the double exposure, stray light must be well controlled to ensure uniform printing across the entire chip. One solution to minimize stray light is to apply large patches of chrome in open field areas to reduce the background transmission during exposure. Unfortunately, this is not feasible for most poly gate masks using a positive resist process. In this work, we report an improved model based DDL layout conversion methodology for full-chip application. A new generation of DDL technology reticle set was developed to verify the performance. Background light shielding is a critical part of the DDL. We report an innovative shielding scheme to minimize the negative impact of stray light for the critical features during double exposures.

  7. A novel design-based global CDU metrology for 1X nm node logic devices

    NASA Astrophysics Data System (ADS)

    Yoon, Young-Keun; Chung, Dong H.; Kim, Min-Ho; Seo, Jung-Uk; Kim, Byung-Gook; Jeon, Chan-Uk; Hur, JiUk; Cho, Wonil; Yamamoto, Tetsuya

    2013-09-01

    As dimension of device shrinks to 1X nm node, an extreme control of critical dimension uniformity (CDU) of masks becomes one of key techniques for mask and wafer fabrication. For memory devices, a large number of optical techniques have been studied and applied to mask production so far. The advantages of these methods are to eliminate the sampling dependency due to their high throughput, to minimize the local CD errors due to their large field of view (FOV) and to improve the correlation with wafer infield uniformity if they have scanner-like optics. For logic devices, however, CD-SEM has been a single solution to characterize CD performance of logic masks for a long time and simple monitoring patterns, instead of the cell patterns, have been measured to monitor the CD quality of masks. Therefore a global CDU of the mask tends to show its ambiguity because of the limited number of measurement sites and large local CD errors. An application of optical metrology for logic mask is a challenging task because patterns are more complex and random in shape and because there is no guarantee of finding patterns for CDU everywhere on the mask. CDU map still consists of the results from the indirect measurements and the traditional definition of uniformity, a statistical deviation of a typical pattern, seems to be unsuitable for logic CDU. A new definition of CDU is required in order to maximize the coverage area on a mask. In this study, we have focused of the possibility of measuring cell patterns and of using an inspection tool with data base handling capability, KLA Teron617, to find the areas and positions where the repeating patterns exist and the patterns which satisfy a certain set of condition and we have devised a new definition of CDU, which can handle multiple target CDs. Then we have checked the feasibility and validity of our new methodology through evaluation its fundamental performance such as accuracy, repeatability, and correlation with other CD metrology

  8. Data preparation solution for e-beam multiple pass exposure: reaching sub-22nm nodes with a tool dedicated to 45 nm

    NASA Astrophysics Data System (ADS)

    Martin, Luc; Manakli, Serdar; Bayle, Sébastien; Choi, Kang-Hoon; Gutsch, Manuela; Pradelles, Jonathan; Bustos, Jessy

    2011-04-01

    Electron Beam Direct Write (EBDW) lithography is used in the IC manufacturing industry to sustain optical lithography for prototyping applications and low volume manufacturing. It is also used in R&D to develop advanced technologies, ahead of mass production. As microelectronics is now moving towards the 32nm node and beyond, the specifications in terms of dimension control and roughness becomes tighter. In addition, the shrink of the size and pitch of features significantly reduces the process window of lithographic tools. In EBDW, the standard proximity effects corrections only based on dose modulation show difficulties to provide the required Energy Latitude for patterning structures designed below 45nm. A new approach is thus needed to improve the process window of EBDW lithography and push its resolution capabilities. In previous papers, a new writing strategy based on multiple pass exposure has been introduced and optimized to pattern critical dense lines. This new technique consists in adding small electron Resolution Improvement Features (eRIFs) on top of the nominal structures. Then this new design is exposed in two successive passes with optimized doses. Previous studies were led to evaluate this new writing technique and establish rules to optimize the design of the eRIF. Significant improvements have already been demonstrated on SRAM and Logic structures down to the 16nm node. These results were obtained with a tool dedicated to the 45nm node. The next step of this work is thus to automatically implement the eRIF to correct large-scale layouts. In this paper, a new data preparation flow is set up for EBDW lithography. It uses the eRIF solution as a full advanced correction method for critical structures. The specific correction rules established in our previous studies are implemented to improve the CD control and the patterning of corners and line ends. Moreover, the dose and shape of the eRIFs are automatically tuned to best fit the nominal design

  9. DOE experiment for scattering bars optimization at the 90nm node

    NASA Astrophysics Data System (ADS)

    Bouton, G.; Connolly, B.; Courboin, D.; Di Giacomo, A.; Gasnier, F.; Lallement, R.; Parker, D.; Pindo, M.; Richoilley, J. C.; Royere, F.; Rameau-Savio, A.; Tissier, M.

    2011-03-01

    Scattering bars (SB) are sub-resolution lines added to the original database during Resolution Enhancement Techniques (RET) treatments. Their goal is stabilizing the CD of the adjacent polygons (by suppressing or reducing secondary diffraction waves). SB increase the process window in the litho process by lowering the first derivative of the CD. Moreover, the detailed knowledge of SB behavior around the fab working point is a must for future shrinks and for preparing the next technology nodes. SB are inserted in the generation of critical levels for STMicroelectronics 90 nm technology embedded memories before invoking the Model for Optical Proximity Corrections (MBOPC). This allows the software to calculate their contribution to the intensity in the aerial image and integrate their effects in Edge Proximity Error (EPE) corrections. However the Rule-Based insertion of these assist features still leaves behind occurrences of conflicting priorities as in the image below. (See manuscript PDF)Detection of Hot Spots in 2D simulations for die treatment validation (done on BRION equipment on each critical level before mask making) is in most cases correlated with SB singularities, at least for CD non-uniformity, bridging issues and necking in correspondence with OPC fragmentation effects. Within the framework of the MaXSSIMM project, we established a joint STMicroelectronics and Toppan Photomasks team to explore the influence of assist features (CD, distance), convex and concave corner rounding and CD uniformity by means of specific test patterns. The proposed study concerns the algorithms used to define the mask shop input as well as the physical mask etching. A set of test cases, based on elementary test patterns, each one including a list of geometrical variations, has been defined. As the number of configurations becomes rapidly very large (tens of thousands) we had to apply Design of Experiments (DOE) algorithms in order to reduce the number of measurements to a

  10. Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond

    NASA Astrophysics Data System (ADS)

    Sampedro, C.; Gámiz, F.; Godoy, A.; Valín, R.; García-Loureiro, A.; Rodríguez, N.; Tienda-Luna, I. M.; Martinez-Carricondo, F.; Biel, B.

    2011-11-01

    With the 32 nm node in mass production, simulation tools have to include quantum effects to correctly describe the behavior of the devices. The Multi-Subband Ensemble Monte Carlo (MSB-EMC) approach constitutes today's most accurate method for the study of nanodevices with important applications to SOI devices. However, the study of bulk devices with MSB-EMC codes presents practical limitations arising from the device geometry and the existence of a semi-infinite quantum well. This work presents a in-depth study of such issues to properly apply the Multi-Subband approach to bulk devices. The developed simulator has been used to study bulk-nMOSFETs for the 32 nm technological node and beyond which still constitutes the mainstream technology in commercial ICs and to compare them to their SOI counterparts.

  11. Nodes

    NASA Technical Reports Server (NTRS)

    Hanson, John; Martinez, Andres; Petro, Andrew

    2015-01-01

    Nodes is a technology demonstration mission that is scheduled for launch to the International SpaceStation no earlier than Nov.19, 2015. The two Nodes satellites will be deployed from the Station in early 2016 todemonstrate new network capabilities critical to the operation of swarms of spacecraft. They will demonstrate the ability ofmulti spacecraft swarms to receive and distribute ground commands, exchange information periodically, andautonomously configure the network by determining which spacecraft should communicate with the ground each day ofthe mission.

  12. Practical proof of CP element based design for 14nm node and beyond

    NASA Astrophysics Data System (ADS)

    Maruyama, Takashi; Takita, Hiroshi; Ikeno, Rimon; Osawa, Morimi; Kojima, Yoshinori; Sugatani, Shinji; Hoshino, Hiromi; Hino, Toshio; Ito, Masaru; Iizuka, Tetsuya; Komatsu, Satoshi; Ikeda, Makoto; Asada, Kunihiro

    2013-03-01

    To realize HVM (High Volume Manufacturing) with CP (Character Projection) based EBDW, the shot count reduction is the essential key. All device circuits should be composed with predefined character parts and we call this methodology "CP element based design". In our previous work, we presented following three concepts [2]. 1) Memory: We reported the prospects of affordability for the CP-stencil resource. 2) Logic cell: We adopted a multi-cell clustering approach in the physical synthesis. 3) Random interconnect: We proposed an ultra-regular layout scheme using fixed size wiring tiles containing repeated tracks and cutting points at the tile edges. In this paper, we will report the experimental proofs in these methodologies. In full chip layout, CP stencil resource management is critical key. From the MCC-POC (Proof of Concept) result [1], we assumed total available CP stencil resource as 9000um2. We should manage to layout all circuit macros within this restriction. Especially the issues in assignment of CP-stencil resource for the memory macros are the most important as they consume considerable degree of resource because of the various line-ups such as 1RW-, 2RW-SRAMs, Resister Files and ROM which require several varieties of large size peripheral circuits. Furthermore the memory macros typically take large area of more than 40% of die area in the forefront logic LSI products so that the shot count increase impact is serious. To realize CP-stencil resource saving we had constructed automatic CP analyzing system. We developed two types of extraction mode of simple division by block and layout repeatability recognition. By properly controlling these models based upon each peripheral circuit characteristics, we could minimize the consumption of CP stencil resources. The estimation for 14nm technology node had been performed based on the analysis of practical memory compiler. The required resource for memory macro is proved to be affordable value which is 60% of full

  13. Integration of e-beam direct write in BEOL processes of 28nm SRAM technology node using mix and match

    NASA Astrophysics Data System (ADS)

    Gutsch, Manuela; Choi, Kang-Hoon; Hanisch, Norbert; Hohle, Christoph; Seidel, Robert; Steidel, Katja; Thrun, Xaver; Werner, Thomas

    2014-10-01

    Many efforts were spent in the development of EUV technologies, but from a customer point of view EUV is still behind expectations. In parallel since years maskless lithography is included in the ITRS roadmap wherein multi electron beam direct patterning is considered as an alternative or complementary approach for patterning of advanced technology nodes. The process of multi beam exposures can be emulated by single beam technologies available in the field. While variable shape-beam direct writers are already used for niche applications, the integration capability of e-beam direct write at advanced nodes has not been proven, yet. In this study the e-beam lithography was implemented in the BEoL processes of the 28nm SRAM technology. Integrated 300mm wafers with a 28nm back-end of line (BEoL) stack from GLOBALFOUNDRIES, Dresden, were used for the experiments. For the patterning of the Metal layer a Mix and Match concept based on the sequence litho - etch - litho - etch (LELE) was developed and evaluated wherein several exposure fields were blanked out during the optical exposure. E-beam patterning results of BEoL Metal and Via layers are presented using a 50kV VISTEC SB3050DW variable shaped electron beam direct writer at Fraunhofer IPMS-CNT. Etch results are shown and compared to the POR. In summary we demonstrate the integration capability of EBDW into a productive CMOS process flow at the example of the 28nm SRAM technology node.

  14. Applications of AFM in semiconductor R&D and manufacturing at 45 nm technology node and beyond

    NASA Astrophysics Data System (ADS)

    Lee, Moon-Keun; Shin, Minjung; Bao, Tianming; Song, Chul-Gi; Dawson, Dean; Ihm, Dong-Chul; Ukraintsev, Vladimir

    2009-03-01

    Continuing demand for high performance microelectronic products propelled integrated circuit technology into 45 nm node and beyond. The shrinking device feature geometry created unprecedented challenges for dimension metrology in semiconductor manufacturing and research and development. Automated atomic force microscope (AFM) has been used to meet the challenge and characterize narrower lines, trenches and holes at 45nm technology node and beyond. AFM is indispensable metrology techniques capable of non-destructive full three-dimensional imaging, surface morphology characterization and accurate critical dimension (CD) measurements. While all available dimensional metrology techniques approach their limits, AFM continues to provide reliable information for development and control of processes in memory, logic, photomask, image sensor and data storage manufacturing. In this paper we review up-todate applications of automated AFM in every mentioned above semiconductor industry sector. To demonstrate benefits of AFM at 45 nm node and beyond we compare capability of automated AFM with established in-line and off-line metrologies like critical dimension scanning electron microscopy (CDSEM), optical scatterometry (OCD) and transmission electronic microscopy (TEM).

  15. Radio Frequency Performance Improvement with Drain Bias and Limiting Factors of 65-nm-Node Radio Frequency Metal-Oxide-Semiconductor Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Kao, Hsuan-ling; Lu, Chia-Ling; Chang, Yung-Cheng

    2009-01-01

    With the continuous down scaling of radio frequency metal-oxide-semiconductor field-effect transistors (RF MOSFETs) into a 65 nm node, the RF performance of unity-gain cutoff frequency ( fT), the maximum frequency of oscillation ( fmax), and the minimum noise figure (NFmin) show much smaller dependences on short-channel effects due to increases in drain current and transconductance (gm), which originate from the short-channel effects. We have studied the effect of drain bias on the RF performance of 65-nm-node MOSFETs. Both the fT and NFmin improve linearly with increasing drain voltage, in contrast with their independence on drain bias in longer-channel devices. Additionally, although fT improves continuously in sub-65-nm node devices, fmax and NFmin deteriorate more in 65-nm-node transistors than in 90-nm-node devices owing to a limiting parasitic effect.

  16. Extending aggressive low-k1 design rule requirements for 90-nm and 65-nm nodes via simultaneous optimization of NA, illumination, and OPC

    NASA Astrophysics Data System (ADS)

    Roy, Sabita; Van Den Broeke, Douglas J.; Chen, J. F.; Liebchen, Armin; Chen, Ting; Hsu, Stephen D.; Shi, Xuelong; Socha, Robert J.

    2004-05-01

    Under low-k1 patterning constraints, it has been a challenge for the lithography process to meet the aggressive IC design rule requirements for the 90nm and the upcoming 65nm nodes. From the imaging perspective, we see the geometric design rules are largely governed by numerical aperture (NA), illumination settings, and OPC for any resolution enhancement technique (RET) applied mask. We report a case study of exploring a set of process feasible design rule criteria based on a state-of-the-art μProcessor chip that contains three different styles of circuit design - standard library cell (SLC), random logic (RML), and SRAM. To keep the packing density higher for SRAM, the critical criteria for design rules involve achievable minimum pitch, sufficient area of contact-landing pad, minimum line end shortening (LES) to ensure poly endcap, and preferably to have optimum pitch for the placement of Scattering Bars (SB). For RML, the goal is to achieve the printing of ever smaller critical dimension (CD) with a greater CD uniformity control. The SLC should be designed to be comparable with both RML and SRAM devices. Hence, the design rule constraints for CD, space, line end, minimum pitch, and SB placement for SLC cell is critically confined. Unlike the traditional method of assuming a linear scaling for the design rule set, we explore achievable design rule criteria for very low k1 imaging by simultaneously optimizing NA, illumination settings, and OPC (for the optimum placement of SB) for a calibrated process. This is done by analyzing the CD control and the maximum overlapped process window for critical lines, spaces, line ends, and with the respective k1 factor for the three types of circuits. For 90nm node with k1 as low as 0.36, a feasible set of design rules for the μProcessor chip can be obtained using 6% attPSM with 6% exposure latitude at 400nm of overlapped depth of focus. Using the similar approach for the scaled down 65nm 6% attPSM, it resulted inadequate

  17. Progress on EUV mask fabrication for 32-nm technology node and beyond

    NASA Astrophysics Data System (ADS)

    Zhang, Guojing; Yan, Pei-Yang; Liang, Ted; Park, Seh-jin; Sanchez, Peter; Shu, Emily Y.; Ultanir, Erdem A.; Henrichs, Sven; Stivers, Alan; Vandentop, Gilroy; Lieberman, Barry; Qu, Ping

    2007-05-01

    Extreme ultraviolet lithography (EUVL) tool development achieved a big milestone last year as two full-field Alpha Demo Tools (ADT) were shipped to customers by ASML. In the future horizon, a full field "EUV1" exposure tool from Nikon will be available by the end of 20071 and the pre-production EUV exposure tools from ASML are targeted for 20092. It is essential that high quality EUVL masks can be made and delivered to the EUVL tool users to support the technology development. In the past year, we have demonstrated mask fabrication with low stress absorber deposition and good etch process control yielding a vertical etch profile and a mask CD control of 5.7 nm for 32 nm (1x) space and 7.4 nm for 32 nm (1x) lines. Mask pattern resolution of 15 nm (1x) dense lines was achieved. Full field reflective mask die-to-die inspection at a 125nm pixel size was demonstrated after low defect multilayer blanks became available. In this paper, we will present details of the Intel EUVL Mask Pilot Line progress in EUVL mask defect reduction, pattern CD performance, program defect mask design and inspection, in-house absorber film development and its performance, and EUVL metrology tool development. We will demonstrate an overall improvement in EUV mask manufacturing readiness due to our Pilot Line activities.

  18. Study and comparison of negative tone resists for fabrication of bright field masks for 14nm node

    NASA Astrophysics Data System (ADS)

    Zweber, Amy E.; Faure, Tom; McGuire, Anne; Sundberg, Linda K.; Sooriyakumaran, Ratnam; Sanchez, Martha I.; Bozano, Luisa D.; Senna, Tasuku; Fujita, Yuki; Negishi, Yoshiyuki; Tanabe, Masahito; Kaneko, Takahiro

    2012-11-01

    In order to meet the challenging patterning requirements of the 14 nm node, the semiconductor industry has implemented use of negative tone develop (NTD) and other tone inversion techniques on wafer to enable use of bright field masks which provide an improved lithography process window.1,2,3 Due to e-beam write time and mask pattern fidelity requirements, the increased use of bright field masks means that mask makers must focus on improving the performance of their negative tone chemically amplified resist (NCAR) processes. In addition, the move to heavy use of bright field masks is introducing new challenges for mask makers. Bright field masks for 14 nm critical layers are required to have opaque sub-resolution assist features (SRAFs) as small as 50 nm while at the same time having across mask critical dimension uniformity (CDU) of less than 2 nm (3 sigma) to meet the 2014 ITRS targets.4 Achieving these specifications is particularly difficult for bright field contact and via level masks. This paper will survey the performance requirements for NCAR resists for building 14 nm critical level masks. As part of this survey, the results of current commercially available and development NCAR resists will be compared. The study will focus on key elements of the resist process pertaining to line edge roughness, pattern fidelity, minimum feature size, and critical dimension control through density with differences in resist type, sensitivity, and thickness. In addition, use of a novel flow cell test apparatus for detailed study of the develop loading performance of the NCAR resists will be described. Data showing the current capability of these NCAR materials as well as remaining 14 nm node performance gaps and issues will be presented.

  19. Process variation challenges and resolution in the negative-tone develop double patterning for 20nm and below technology node

    NASA Astrophysics Data System (ADS)

    Mehta, Sohan S.; Ganta, Lakshmi K.; Chauhan, Vikrant; Wu, Yixu; Singh, Sunil; Ann, Chia; Subramany, Lokesh; Higgins, Craig; Erenturk, Burcin; Srivastava, Ravi; Singh, Paramjit; Koh, Hui Peng; Cho, David

    2015-03-01

    Immersion based 20nm technology node and below becoming very challenging to chip designers, process and integration due to multiple patterning to integrate one design layer . Negative tone development (NTD) processes have been well accepted by industry experts for enabling technologies 20 nm and below. 193i double patterning is the technology solution for pitch down to 80 nm. This imposes tight control in critical dimension(CD) variation in double patterning where design patterns are decomposed in two different masks such as in litho-etch-litho etch (LELE). CD bimodality has been widely studied in LELE double patterning. A portion of CD tolerance budget is significantly consumed by variations in CD in double patterning. The objective of this work is to study the process variation challenges and resolution in the Negative Tone Develop Process for 20 nm and Below Technology Node. This paper describes the effect of dose slope on CD variation in negative tone develop LELE process. This effect becomes even more challenging with standalone NTD developer process due to q-time driven CD variation. We studied impact of different stacks with combination of binary and attenuated phase shift mask and estimated dose slope contribution individually from stack and mask type. Mask 3D simulation was carried out to understand theoretical aspect. In order to meet the minimum insulator requirement for the worst case on wafer the overlay and critical dimension uniformity (CDU) budget margins have slimmed. Besides the litho process and tool control using enhanced metrology feedback, the variation control has other dependencies too. Color balancing between the two masks in LELE is helpful in countering effects such as iso-dense bias, and pattern shifting. Dummy insertion and the improved decomposition techniques [2] using multiple lower priority constraints can help to a great extent. Innovative color aware routing techniques [3] can also help with achieving more uniform density and

  20. Impact of EUV patterning scenario on different design styles and their ground rules for 7nm/5nm node BEOL layers

    NASA Astrophysics Data System (ADS)

    Chiou, Tsann-Bim; Chen, Alek C.; Dusa, Mircea; Tseng, Shih-En

    2016-03-01

    As the IC industry moves forward to 7nm or 5nm node, the minimum pitch of back-end-of-line (BEOL) layers could be near 30nm. Extreme ultraviolet (EUV) could be the most cost effective solution for patterning critical metal and via layers. Patterning of the critical layers would need greater than 4x exposures using ArFi lithography, leading to severe cost and yield issues. There are two potential design options, one-dimension (1D) and two-dimension (2D), for metal 1 layer. EUV's single exposure option offers superior image quality especially for the 2D design style, but scalability of a 2D design is limited by EUV with a fixed numerical aperture (NA). The single exposure of EUV is an appropriate patterning solution for printing a 1D design directly, but maintaining critical dimension uniformity (CDU) of lines and line-ends is a challenge. Scalability of the 1D design is also limited by the single exposure option. The 1D design can be patterned through a spacer film deposition to gain superior line CD control, followed by printing a cut or block pattern to create the line-ends. Since the minimum pitch of cut/block patterns is generally larger than the metal pitch, EUV's single exposure option has a potential to print the cut/block pattern at smaller pitch and resolution and offers an opportunity to further design shrink. An elongated via design helps design scalability due to an insensitive overlay error contribution to via-to-metal contact area and encroachment.

  1. Design verification for sub-70-nm DRAM nodes via metal fix using E-beam direct write

    NASA Astrophysics Data System (ADS)

    Keil, K.; Jaschinsky, P.; Hohle, C.; Choi, K.-H.; Schneider, R.; Tesauro, M.; Thrum, F.; Zimmermann, R.; Kretz, J.

    2009-01-01

    Because of mask cost reduction, electron beam direct write (EBDW) is implemented for special applications such as rapid prototyping or small volume production in semiconductor industry. One of the most promising applications for EBDW is design verification by means of metal fix. Due to write time constrains, Mix & Match solutions have to be developed at smaller nodes. This study reports on several Mix and Match processes for the integration of E-Beam lithography into the optical litho process flow of Qimonda's 70 nm and 58 nm DRAM nodes. Different metal layers have been patterned in part with DUV litho followed by E-Beam litho using a 50 kV Vistec SB3050 shaped electron beam direct writer. All hardmask patterns were then simultaneously transferred into the DRAM stack. After full chip processing a yield study comprising electrical device characterization and defect investigation was performed. We show detailed results including CD and OVL as well as improvements of the alignment mark recognition. The yield of the E-Beam processed chips was found to be within the range of wafer-to-wafer fluctuation of the POR hardware. We also report on metal fix by electrical cutting of selected diodes in large chip scales which usually cannot be accessed with FIB methods. In summary, we show the capability of EBDW for quick and flexible design verification.

  2. DUV water immersion technology extends linearity: first results from the new 65nm node CD metrology system LWM500 WI

    NASA Astrophysics Data System (ADS)

    Hillmann, Frank; Dobereiner, Stefan; Gittinger, Christian; Reiter, Richard; Falk, Gunther; Bruck, Hans-Jurgen; Scheuring, Gerd; Bosser, Artur; Heiden, Michael; Hoppen, Gerhard; Sulik, Wolfgang; Vollrath, Wolfgang

    2005-06-01

    The increased requirements on reticles for the 65nm technology node with respect to CD homogeneity and CD mean to target requirements call for a metrology system with adequate measurement performance. We report on the new water immersion technique and the system concept of the worlds first optical CD metrology system based on this technology. The core of it is a new DUV immersion objective with a NA of 1.2, using illumination at a wavelength of 248nm. The largest challenge of the water immersion technology was the fluid handling. The key compo-nents, a water injection and removal unit, developed by MueTec, solve this issue. To avoid contaminations the purified DI water is micro-filtered. An environmental chamber guarantees extremely stable measurement conditions. The advantages of optical CD measurements in transmitted light compared to CD-SEM is shown. With this system, already installed, excellent results for short- and longterm repeatability for both linewidth and contact measurements were achieved on COG, KrF HT and ArF HT masks. The linearity range of the system is extended down to 220nm. A comparison of CD measurements between the different tool generations such as the Leica LWM250/270 DUV at 248nm with a NA of 0.9 is shown. An outlook on the future potentials of optical mask CD metrology finalises this report.

  3. Lithography options for the 32nm half pitch node and their implications on resist and material technology

    NASA Astrophysics Data System (ADS)

    Gronheid, Roel; Hendrickx, Eric; Wiaux, Vincent; Maenhoudt, Mireille; Goethals, Mieke; Vandenberghe, Geert; Ronse, Kurt

    2008-03-01

    There still remain three major technological lithography options for high volume manufacturing at the 32nm half pitch node: 193nm immersion lithography with high index materials, enabling NA>1.6 193nm double patterning and EUV lithography. In this paper the pros and cons of these three options will be discussed. Particular interest will be paid to the consequences of the final choice on the resist technology. High index 193nm immersion lithography also requires high index resist materials, which are under development but still far removed from the target refractive index and absorbance specifications not to mention lithographical performance. For double patterning the pitch may be relaxed, but the resists still need to be able to print very narrow lines and/or trenches. Moreover, it would be preferred for the resists to support pattern or image freezing techniques in order to step away from the litho-etch-litho-etch approach and make double patterning more cost effective. For EUV the resist materials need to meet very aggressive sensitivity specifications. In itself this is possible, but it is difficult to simultaneously maintain performance in terms of resolution and line width roughness. A new parameter (K LUP) for assessing resist performance in terms of these three performance criteria will be introduced.

  4. Advanced gate CDU control in sub-28nm node using poly slot process by scatterometry metrology

    NASA Astrophysics Data System (ADS)

    Tzai, Wei-Jhe; Chen, Howard; Lin, Jun-Jin; Huang, Yu-Hao; Yu, Chun-Chi; Lin, Ching-Hung Bert; Yoo, Sungchul; Huang, Chien-Jen Eros; Mihardja, Lanny

    2013-04-01

    Scatterometry-based metrology is a well proven method to measure and monitor the critical dimensions of interest in advanced sub-28nm process development and high volume manufacturing [1][3][4][6][7]. In this paper, a proposed solution to control and achieve the optimal gate critical dimension uniformity (CDU) was explored. The proposed solution is named a novel scatterometry slot gate CDU control flow. High performance measurement and control during the slot gate step is critical as it directly controls the poly line cut profile to the active area which then directly impacts the final device performance. The proposed flow incorporates scatterometry-based CD (SCD) measurement feedback and feed forward to the Automation Process Control (APC) system, further process recipe fine tuning utilizing the data feedback and forward, and two dimensional (2D) and three dimensional (3D) scatterometry-based CD (SCD) measurement of gate after developer inspection (ADI) and after etch inspection (AEI) [1]. The methodologies and experiment results presented in this study started from the process development through the SCD model optimization of the DOE wafers, to the final implementation of the process control flow and measurement loop into the production line to evaluate its capability for long term in-line monitoring in high volume manufacturing environment. The result showed significant improvement in the gate CD uniformity that met the sub-28nm process manufacturing requirement.

  5. Improving inspectability of sub-2x-nm node masks with complex SRAF

    NASA Astrophysics Data System (ADS)

    Kang, In Yong; Yoon, Gisung; Lee, Jonghee; Chung, Donghoon Paul; Kim, Byung-Gook; Jeon, Chan-Uk; Inderhees, Gregg; Hutchinson, Trent; Cho, Wonil; Hur, Jiuk

    2013-10-01

    As Moore's Law continues its relentless march toward ever smaller geometries on wafer, lithographers who had been relying on the implementation of a solution using EUV lithography are faced with increasing challenges to meet requirements for printing sub-2x nm half-pitch (HP). The available choices rely on 193 nm DUV immersion lithography, but with decreasing k1 values and thus shrinking process windows. To overcome these limitations, two techniques such as inverse lithography technology (ILT) and source mask optimization (SMO) were introduced by computational OPC scheme. From a mask inspection viewpoint, the impact of both ILT and SMO is similar - both result in photomasks that have a large quantity of sub-resolution assist features (SRAFs). These SRAFs are challenging for mask-makers to pattern with high fidelity and accuracy across a full-field mask, and thus mask inspection is challenged to maintain a high sensitivity level on primary mask features while not suffering from a high nuisance detection rate on the SRAF features. To solve this particular issue, new inspection approach was developed by using computational image calibration based wafer scanner simulation. This paper will be described the new capabilities, which analyzes the aerial image to differentiate between printing and non-printing features, and applying the appropriate sensitivity threshold. All analysis will be shown comparing results with and without the new capabilities, with an emphasis on inspectability improvements and nuisance defect reduction to improve mask cycle time.

  6. Hyper-NA imaging of 45nm node random CH layouts using inverse lithography

    NASA Astrophysics Data System (ADS)

    Hendrickx, E.; Tritchkov, A.; Sakajiri, K.; Granik, Y.; Kempsell, M.; Vandenberghe, G.

    2008-03-01

    The imaging of Contact Hole (CH) layouts is one of the most challenging tasks in hyper-NA lithography. Contact Hole layouts can be printed using different illumination conditions, but an illumination condition that provides good imaging at dense pitches (such as Quasar or Quadrupole illumination), will usually suffer from poor image contrast and Depth of Focus (DOF) towards the more isolated pitches. Assist Features (AF) can be used to improve the imaging of more isolated contact holes, but for a random CH layout, an AF placement rule would have to be developed for every CH configuration in the design. This makes optimal AF placement an almost impossible task for random layouts when using rule-based AF placement. We have used an inverse lithography technique by Mentor Graphics, to treat a random contact hole layout (drawn at minimal pitch 115nm) for imaging at NA 1.35. The combination of the dense 115nm pitch and available NA of 1.35 makes the use of Quasar illumination necessary, and the treatment of the clip with inverse lithography automatically generated optimal (model-based) AF for all geometries in the design. Because the inverse lithography solution consists of smooth shapes rather than rectangles, mask manufacturability becomes a concern. The algorithm allows simplification of the smooth shapes into rectangles and greatly improves mask write time. Wafer prints of clips treated with inverse lithography at NA 1.35 confirm the benefit of the assist features.

  7. The cleaning effects of mask aerial image after FIB repair in sub-80nm node

    NASA Astrophysics Data System (ADS)

    Lee, Hyemi; Jeong, Goomin; Jeong, Sookyeong; Kim, Sangchul; Han, Oscar

    2007-10-01

    The Aerial Image Measurement Tool (AIMS) can estimate the wafer printability without exposure to wafer by using scanner. Since measured aerial images are similar with wafer prints, using AIMS becomes normal for verifying issue points of a mask. Also because mask design rule continues to shrink, defects and CD uniformity are at issues as factors decreasing mask yield. Occurred defects on a mask are removed by existing mask repair techniques such as nanomachining, electron beam and focused ion beam. But damages and contaminants by chemical and physical action are found on the mask surface and contaminants above special size lead to defects on a wafer. So cleaning has been necessary after repair process and detergency has been important. Before AIMS measurement, cleaning is done to make same condition with shipped mask, which method brings repeated process - repair and cleaning - if aerial image was not usual. So cleaning effect after the FIB repair is tested by using the AIMS to find the optimized process minimizing the repeated process and to get similar scanner results. First, programmed defect mask that includes various defect size and type is manufactured on some kinds of patterns in DRAM device and sub-80nm tech. Next the defects on the programmed mask are repaired by FIB repair machine. And aerial images are compared after the chemical cleaning, non-chemical cleaning and without cleaning. Finally, approximate aerial images to scanner results are taken regardless of cleaning process. It means that residue originated from repair process doesn't affect aerial images and flexible process is possible between AIMS, repair and cleaning process. But as the effect of minute particles and contaminations will be increased if pattern size is much smaller, it needs to reconfirm the effect below the sub-60nm in DRAM device.

  8. 90nm node contact hole patterning through applying model based OPC in KrF lithography

    NASA Astrophysics Data System (ADS)

    Jeon, Young-Doo; Lee, Sang-Uk; Choi, Jaeyoung; Kim, Jeahee; Han, Jaewon

    2008-03-01

    As semiconductor technologies move toward 90nm generation and below, contact hole is one of the most challenging features to print in the semiconductor manufacturing process. There are two principal difficulties in order to define small contact hole pattern on wafer. One is insufficient process margin besides poor resolution compared with line & space pattern. The other is that contact hole should be made through pitches and sometimes random contact hole pattern should be fabricated. Therefore advanced ArF lithography scanner should be used for small contact hole printing with RETs (Resolution Enhancement Techniques) such as immersion lithography, OPC(Optical Proximity Correction), PSM(Phase Shift Mask), high NA(Numerical Aperture), OAI(Off-Axis Illumination), SRAF(Sub-resolution Assistant Feature), mask biasing and thermal flow. Like this, ArF lithography propose the method of enhancing resolution, however, we must spend an enormous amount of CoC(cost of ownership) to utilize ArF photolithography process than KrF. In this paper, we suggest the method of contact holes patterning by using KrF lithography tool in 90nm sFlash(stand alone Flash)devices. For patterning of contact hole, we apply RETs which combine OAI and Model based OPC. Additionally, in this paper we present the result of hole pattern images which operate ArF lithography equipment. Also, this study describes comparison of two wafer images that ArF lithography process which is used mask biasing and Rule based OPC, KrF lithography process which is applied hybrid OPC.

  9. Results of benchmarking of advanced CD-SEMs at the 90-nm CMOS technology node

    NASA Astrophysics Data System (ADS)

    Bunday, Benjamin D.; Bishop, Michael; Allgair, John A.

    2004-05-01

    The Advanced Metrology Advisory Group (AMAG) is a council composed of the chief CD-metrologists from the International SEMATECH Manufacturing Initiative (ISMI) consortium"s Member Companies and from the National Institute of Standards (NIST). The AMAG wrote and, in 2002, with CD-SEM supplier involvement, updated the "Unified Advanced CD-SEM Specification for Sub-130nm Technology (Version 2002)" to be a living document which outlines the required performance of advanced CD-SEMs for supplier compliance to the 2003 International Technology Roadmap for Semiconductors, and also conveys member companies" other collective needs to vendors. Through applying this specification during the mid-2003 timeframe, a benchmarking effort of the currently available advanced CD-SEMs has been performed. These results are presented here. The AMAG Unified Specification includes sections outlining the test methodologies, metrics, and wafer-target requirements for each parameter included in the benchmark, and, when applicable, prescribes a target specification compatible with the ITRS and methodologies compatible with the demands of 90nm technology. Parameters to be considered include: ×Precision, Repeatability and Reproducibility ×Accuracy, Apparent Beam Width and Resolution ×Charging and Contamination ×Tool-to-Tool Matching ×Pattern Recognition and Navigation Accuracy ×Throughput ×Instrumentation Outputs ×Tool Automation and Utility ×Precision and Accuracy of Profile Measurement ×Precision and Accuracy of Roughness Measurement. Previous studies under this same project have been published, with the initial version of the International Sematech Unified Specification in 1998, and multi-supplier benchmarks in 1999 and 2001. The results for the 2003 benchmark will be shown and compared to the ITRS, and composite viewpoints showing these 2003 benchmark results compared to the past results are also shown, demonstrating interesting CD-SEM industry trends.

  10. Evaluating practical vs. theoretical inspection system capability with a new programmed defect test mask designed for 3X and 4X technology nodes

    NASA Astrophysics Data System (ADS)

    Glasser, Joshua; Pratt, Tim

    2008-10-01

    Programmed defect test masks serve the useful purpose of evaluating inspection system sensitivity and capability. It is widely recognized that when evaluating inspection system capability, it is important to understand the actual sensitivity of the inspection system in production; yet unfortunately we have observed that many test masks are a more accurate judge of theoretical sensitivity rather than real-world usable capability. Use of ineffective test masks leave the purchaser of inspection equipment open to the risks of over-estimating the capability of their inspection solution and overspecifying defect sensitivity to their customers. This can result in catastrophic yield loss for device makers. In this paper we examine some of the lithography-related technology advances which place an increasing burden on mask inspection complexity, such as MEEF, defect printability estimation, aggressive OPC, double patterning, and OPC jogs. We evaluate the key inspection system component contributors to successful mask inspection, including what can "go wrong" with these components. We designed and fabricated a test mask which both (a) more faithfully represents actual production use cases; and (b) stresses the key components of the inspection system. This mask's patterns represent 32nm, 36nm, and 45nm logic and memory technology including metal and poly like background patterns with programmed defects. This test mask takes into consideration requirements of advanced lithography, such as MEEF, defect printability, assist features, nearly-repetitive patterns, and data preparation. This mask uses patterns representative of 32nm, 36nm, and 45nm logic, flash, and DRAM technology. It is specifically designed to have metal and poly like background patterns with programmed defects. The mask is complex tritone and was designed for annular immersion lithography.

  11. Particle control challenges in process chemicals and ultra-pure water for sub-10nm technology nodes

    NASA Astrophysics Data System (ADS)

    Rastegar, Abbas; Samayoa, Martin; House, Matthew; Kurtuldu, Hüseyin; Eah, Sang-Kee; Morse, Lauren; Harris-Jones, Jenah

    2014-04-01

    Particle contamination in ultra-pure water (UPW) and chemicals will eventually end up on the surface of a wafer and may result in killer defects. To improve the semiconductor processing yield in sub-10 nm half pitch nodes, it is necessary to control particle defectivity. In a systematic study of all major techniques for particle detection, counting, and sizing in solutions, we have shown that there is a gap in the required particle metrology which needs to be addressed by the industry. To reduce particles in solutions and improve filter retention for sub-10 nm particles with very low densities (<10 particles/mL), liquid particle counters that are able to detect small particles at low densities are required. Non-volatile residues in chemicals and UPW can result in nanoparticles. Measuring absolute non-volatile residues in UPW with concentrations in the ppb range is a challenge. However, by using energy-dispersive spectroscopy (EDS) analysis through transmission electron microscopy (TEM) of non-volatile residues we found silica both in dissolved and colloidal particle form which is present in one of the cleanest UPW that we tested. A particle capture/release technique was developed at SEMATECH which is able to collect particles from UPW and release them in a controlled manner. Using this system we showed sub-10 nm particles are present in UPW. In addition to colloidal silica, agglomerated carbon containing particles were also found in UPW.

  12. Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

    SciTech Connect

    Yin, Lan; Harburg, Daniel V.; Rogers, John A.; Bozler, Carl; Omenetto, Fiorenzo

    2015-01-05

    Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

  13. Applications of X-Ray Reflectometry to Develop and Monitor FEOL Processes for sub-45nm Technology Nodes

    SciTech Connect

    Nolot, E.; Bogumilowicz, Y.; Danel, A.; Lhostis, S.

    2007-09-26

    Fast X-Ray Reflectometry is a powerful technique for the analysis of FEOL processes for sub-45 nm technology nodes since it can determine the density, the thickness and the roughness of extremely thin layers and stacks. It helps to explore and identify high-k gate dielectrics and metal gate electrodes that enable the fabrication of optimized gate stack. Moreover, XRR is an attractive alternative to spectroscopic ellipsometry to determine the thickness and the physical properties of starting materials that either improve heat dissipation properties or improve mobility in transistor channels: silicon-on-insulator with insulator being a material of higher thermal conductivity than SiO{sub 2} or strained silicon, respectively.

  14. OPC model data collection for 45-nm technology node using automatic CD-SEM offline recipe creation

    NASA Astrophysics Data System (ADS)

    Fischer, Daniel; Talbi, Mohamed; Wei, Alex; Menadeva, Ovadya; Cornell, Roger

    2007-03-01

    Optical and Process Correction in the 45nm node is requiring an ever higher level of characterization. The greater complexity drives a need for automation of the metrology process allowing more efficient, accurate and effective use of the engineering resources and metrology tool time in the fab, helping to satisfy what seems an insatiable appetite for data by lithographers and modelers charged with development of 45nm and 32nm processes. The scope of the work referenced here is a 45nm design cycle "full-loop automation", starting with gds formatted target design layout and ending with the necessary feedback of one and two dimensional printed wafer metrology. In this paper the authors consider the key elements of software, algorithmic framework and Critical Dimension Scanning Electron Microscope (CDSEM) functionality necessary to automate its recipe creation. We evaluate specific problems with the methodology of the former art, "on-tool on-wafer" recipe construction, and discuss how the implementation of the design based recipe generation improves upon the overall metrology process. Individual target-by-target construction, use of a one pattern recognition template fits all approach, a blind navigation to the desired measurement feature, lengthy sessions on tool to construct recipes and limited ability to determine measurement quality in the resultant data set are each discussed as to how the state of the art Design Based Metrology (DBM) approach is implemented. The offline created recipes have shown pattern recognition success rates of up to 100% and measurement success rates of up to 93% for line/space as well as for 2D Minimum/Maximum measurements without manual assists during measurement.

  15. Study of alternative capping and absorber layers for extreme ultraviolet (EUV) masks for sub-16nm half-pitch nodes

    NASA Astrophysics Data System (ADS)

    Rastegar, Abbas; House, Matthew; Tian, Ruahi; Laursen, Thomas; Antohe, Alin; Kearney, Patrick

    2014-04-01

    Multiple challenges, including the availability of a reliable high power source, defect free mask, and proper resist material, have forced extreme ultraviolet (EUV) lithography to be considered for sub-10 nm half-pitch nodes. Therefore, techniques such as phase shift masks (PSMs) or high numerical aperture (NA) lithography might be considered. Such techniques require thin EUV absorber materials to be optimized to reduce EUV mask shadowing effects. Despite the challenges in dry etching of Ni and finding proper chemistries with a high etch selectivity to suitable capping materials, we decided to examine the chemical stability of Ni for existing mask cleaning chemistries. Ni, after Ag, has the highest absorption in EUV light at λ = 13.5 nm, which makes it a proper candidate—in pure form or in mixing with other elements—for thin absorber film. Depending on the composition of the final material, proper integration schemes will be developed. We studied Ni stability in commonly used mask cleaning processes based on ammonium hydroxide/ hydrogen peroxide (APM) and water mixtures. Ni films deposited with an ion beam deposition technique with a thickness of 35 nm are sufficient to totally absorb EUV light at λ = 13.5 nm. Multiple cleanings of these Ni films resulted in Ni oxidation— confirmed by time-of-flight secondary ion mass spectroscopy (TOF-SIMS) analysis as NiO with thickness about 1.5 nm. Furthermore, Ni oxidation processes are self-limiting and oxide layer thickness did not increase with a further cleaning. A three minute exposure to sulfuric acid/hydrogen peroxide mixture (SPM) can remove NiO and Ni totally. To protect Ni film from etching by SPM chemistry a 3 nm Si capping was used on top of Ni film. However, Si capping was removed by APM chemistry and could not protect Ni film against SPM chemistry. TiO2 may be a very good capping layer for EUV optics but it is not suitable for EUV mask blanks and will be removed by APM chemistries.

  16. Complete data preparation flow for Massively Parallel E-Beam lithography on 28nm node full-field design

    NASA Astrophysics Data System (ADS)

    Fay, Aurélien; Browning, Clyde; Brandt, Pieter; Chartoire, Jacky; Bérard-Bergery, Sébastien; Hazart, Jérôme; Chagoya, Alexandre; Postnikov, Sergei; Saib, Mohamed; Lattard, Ludovic; Schavione, Patrick

    2016-03-01

    Massively parallel mask-less electron beam lithography (MP-EBL) offers a large intrinsic flexibility at a low cost of ownership in comparison to conventional optical lithography tools. This attractive direct-write technique needs a dedicated data preparation flow to correct both electronic and resist processes. Moreover, Data Prep has to be completed in a short enough time to preserve the flexibility advantage of MP-EBL. While the MP-EBL tools have currently entered an advanced stage of development, this paper will focus on the data preparation side of the work for specifically the MAPPER Lithography FLX-1200 tool [1]-[4], using the ASELTA Nanographics Inscale software. The complete flow as well as the methodology used to achieve a full-field layout data preparation, within an acceptable cycle time, will be presented. Layout used for Data Prep evaluation was one of a 28 nm technology node Metal1 chip with a field size of 26x33mm2, compatible with typical stepper/scanner field sizes and wafer stepping plans. Proximity Effect Correction (PEC) was applied to the entire field, which was then exported as a single file to MAPPER Lithography's machine format, containing fractured shapes and dose assignments. The Soft Edge beam to beam stitching method was employed in the specific overlap regions defined by the machine format as well. In addition to PEC, verification of the correction was included as part of the overall data preparation cycle time. This verification step was executed on the machine file format to ensure pattern fidelity and accuracy as late in the flow as possible. Verification over the full chip, involving billions of evaluation points, is performed both at nominal conditions and at Process Window corners in order to ensure proper exposure and process latitude. The complete MP-EBL data preparation flow was demonstrated for a 28 nm node Metal1 layout in 37 hours. The final verification step shows that the Edge Placement Error (EPE) is kept below 2.25 nm

  17. Shot number analysis on character projection e-beam lithography for random logic device fabrication at 70-nm node

    NASA Astrophysics Data System (ADS)

    Tomo, Yoichi; Shimizu, Isao; Kojima, Yoshinori; Yoshida, Akira; Takenaka, Hiroshi; Yamabe, Masaki

    2001-08-01

    A reduction efficiency of shot numbers in character projection (CP) electron-beam (EB) lithography with memory device application depends on a design rule (cell size) and a pattern complexity within a memory cell. Many researchers reported that it was approximately 1/10 to 1/100 compared with conventional variable-shaped beam (VSB) method. The reduction of shot numbers in memory devices mainly comes from allowance to place multiple cells in one CP-cell area and simplicity of the cell's placement (regular pitch with adjacent allocation). On the other hand, there are few reports concerning reduction efficiency of shot numbers with logic specific application in CP EB lithography due to the complexity of logic cell's allocation to CP-cell area. To analyze this, logic device layout data in 70nm node was prepared by shringking actual functional device data of 350 nm node in the ratio of 1/5 and extracting random logic region. The size of this region was 1,094 x 283 micrometers . The height of logic cell was 2.64micrometers and it was smaller than typical one CP-cell size in second aperture (5 x 5micrometers ). The pattern data in GDS-II stream format was converted into EB exposure data: divided figures (rectangles). By this procedure, numbers of figures and cells were obtained. The total number of referred logic cell was 26,812. Among 26,812 cells, only 111 common (unique) logic cells were used for the logic region. The sum of figures in gate layer was 412,251 and this value was assumed to be equal to a total number of shots in conventional VSB method. Among the 111 common cells, only 6 cells in the gate layer showed width more than 5micrometers (maximum CP-cell size). Most frequently referred cell was an inverter and the number of reference was 5,395. The referred frequency of each cell exponentially decreased when the cells were arranged in descending order of reference. Among the total figures, top cell showed 66,120 accumulated number of figures (referred number=2

  18. Patterning process exploration of metal 1 layer in 7nm node with 3D patterning flow simulations

    NASA Astrophysics Data System (ADS)

    Gao, Weimin; Ciofi, Ivan; Saad, Yves; Matagne, Philippe; Bachmann, Michael; Oulmane, Mohamed; Gillijns, Werner; Lucas, Kevin; Demmerle, Wolfgang; Schmoeller, Thomas

    2015-03-01

    In 7mn node (N7), the logic design requires the critical poly pitch (CPP) of 42-45nm and metal 1 (M1) pitch of 28- 32nm. Such high pattern density pushes the 193 immersion lithography solution toward its limit and also brings extremely complex patterning scenarios. The N7 M1 layer may require a self-aligned quadruple patterning (SAQP) with triple litho-etch (LE3) block process. Therefore, the whole patterning process flow requires multiple exposure+etch+deposition processes and each step introduces a particular impact on the pattern profiles and the topography. In this study, we have successfully integrated a simulation tool that enables emulation of the whole patterning flow with realistic process-dependent 3D profile and topology. We use this tool to study the patterning process variations of N7 M1 layer including the overlay control, the critical dimension uniformity (CDU) budget and the lithographic process window (PW). The resulting 3D pattern structure can be used to optimize the process flow, verify design rules, extract parasitics, and most importantly, simulate the electric field and identify hot spots for dielectric reliability. As an example application, we will report extractions of maximum electric field at M1 tipto- tip which is one of the most critical patterning locations and we will demonstrate the potential of this approach for investigating the impact of process variations on dielectric reliability. We will also present simulations of an alternative M1 patterning flow, with a single exposure block using extreme ultraviolet lithography (EUVL) and analyze its advantages compared to the LE3 block approach.

  19. Hybrid Metrology and 3D-AFM Enhancement for CD Metrology Dedicated to 28 nm Node and Below Requirements

    SciTech Connect

    Foucher, J.; Faurie, P.; Dourthe, L.

    2011-11-10

    The measurement accuracy is becoming one of the major components that have to be controlled in order to guarantee sufficient production yield. Already at the R and D level, we have to come up with the accurate measurements of sub-40 nm dense trenches and contact holes coming from 193 immersion lithography or E-Beam lithography. Current production CD (Critical Dimension) metrology techniques such as CD-SEM (CD-Scanning Electron Microscope) and OCD (Optical Critical Dimension) are limited in relative accuracy for various reasons (i.e electron proximity effect, outputs parameters correlation, stack influence, electron interaction with materials...). Therefore, time for R and D is increasing, process windows degrade and finally production yield can decrease because you cannot manufactured correctly if you are unable to measure correctly. A new high volume manufacturing (HVM) CD metrology solution has to be found in order to improve the relative accuracy of production environment otherwise current CD Metrology solution will very soon get out of steam.In this paper, we will present a potential Hybrid CD metrology solution that smartly tuned 3D-AFM (3D-Atomic Force Microscope) and CD-SEM data in order to add accuracy both in R and D and production. The final goal for 'chip makers' is to improve yield and save R and D and production costs through real-time feedback loop implement on CD metrology routines. Such solution can be implemented and extended to any kind of CD metrology solution. In a 2{sup nd} part we will discuss and present results regarding a new AFM3D probes breakthrough with the introduction of full carbon tips made will E-Beam Deposition process. The goal is to overcome the current limitations of conventional flared silicon tips which are definitely not suitable for sub-32 nm nodes production.

  20. Hybrid Metrology & 3D-AFM Enhancement for CD Metrology Dedicated to 28 nm Node and Below Requirements

    NASA Astrophysics Data System (ADS)

    Foucher, J.; Faurie, P.; Dourthe, L.; Irmer, B.; Penzkofer, C.

    2011-11-01

    The measurement accuracy is becoming one of the major components that have to be controlled in order to guarantee sufficient production yield. Already at the R&D level, we have to come up with the accurate measurements of sub-40 nm dense trenches and contact holes coming from 193 immersion lithography or E-Beam lithography. Current production CD (Critical Dimension) metrology techniques such as CD-SEM (CD-Scanning Electron Microscope) and OCD (Optical Critical Dimension) are limited in relative accuracy for various reasons (i.e electron proximity effect, outputs parameters correlation, stack influence, electron interaction with materials…). Therefore, time for R&D is increasing, process windows degrade and finally production yield can decrease because you cannot manufactured correctly if you are unable to measure correctly. A new high volume manufacturing (HVM) CD metrology solution has to be found in order to improve the relative accuracy of production environment otherwise current CD Metrology solution will very soon get out of steam. In this paper, we will present a potential Hybrid CD metrology solution that smartly tuned 3D-AFM (3D-Atomic Force Microscope) and CD-SEM data in order to add accuracy both in R&D and production. The final goal for "chip makers" is to improve yield and save R&D and production costs through real-time feedback loop implement on CD metrology routines. Such solution can be implemented and extended to any kind of CD metrology solution. In a 2nd part we will discuss and present results regarding a new AFM3D probes breakthrough with the introduction of full carbon tips made will E-Beam Deposition process. The goal is to overcome the current limitations of conventional flared silicon tips which are definitely not suitable for sub-32 nm nodes production.

  1. Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology

    NASA Astrophysics Data System (ADS)

    Wang, Guilei; Abedin, Ahmad; Moeen, Mahdi; Kolahdouz, Mohammadreza; Luo, Jun; Guo, Yiluan; Chen, Tao; Yin, Huaxiang; Zhu, Huilong; Li, Junfeng; Zhao, Chao; Radamson, Henry H.

    2015-01-01

    SiGe has been widely used as stressors in source/drain (S/D) regions of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) to enhance the channel mobility. In this study, selectively grown Si1-xGex (0.33 ⩽ x ⩽ 0.35) with boron concentration of 1 × 1020 cm-3 was used to elevate the S/D regions on bulk FinFETs in 14 nm technology node. The epitaxial quality of SiGe layers, SiGe profile and the strain amount of the SiGe layers were investigated. In order to in-situ clean the Si-fins before SiGe epitaxy, a series of prebaking experiments at temperature ranging from 740 to 825 °C were performed. The results showed that the thermal budget needs to be limited to 780-800 °C in order to avoid any damage to the shape of Si-fins but to remove the native oxide which is essential for high epitaxial quality. In this study, a kinetic gas model was also applied to predict the SiGe growth profile on Si-fins with trapezoidal shape. The input parameters for the model include growth temperature, partial pressures of reactant gases and the chip layout. By knowing the epitaxial profile, the strain to the Si-fins exerted by SiGe layers can be calculated. This is important in understanding the carrier transport in the FinFETs. The other benefit of the modeling is that it provides a cost-effective alternative for epitaxy process development as the SiGe profile can be readily predicted for any chip layout in advance.

  2. 3D mask modeling with oblique incidence and mask corner rounding effects for the 32nm node

    NASA Astrophysics Data System (ADS)

    Saied, Mazen; Foussadier, Franck; Belledent, Jérôme; Trouiller, Yorick; Schanen, Isabelle; Yesilada, Emek; Gardin, Christian; Urbani, Jean Christophe; Sundermann, Frank; Robert, Frédéric; Couderc, Christophe; Vautrin, Florent; LeCam, Laurent; Kerrien, Gurwan; Planchot, Jonathan; Martinelli, Catherine; Wilkinson, Bill; Rody, Yves; Borjon, Amandine; Morgana, Nicolo; Di-Maria, Jean-Luc; Farys, Vincent

    2007-10-01

    The perpetual shrinking in critical dimensions in semiconductor devices is driving the need for increased resolution in optical lithography. Increasing NA to gain resolution also increases Optical Proximity Correction (OPC) model complexity. Some optical effects which have been completely neglected in OPC modeling become important. Over the past few years, off-axis illumination has been widely used to improve the imaging process. OPC models which utilize such illumination still use the thin film mask approximation (Kirchhoff approach), during optical model generation, which utilizes a normal incidence. However, simulating a three dimensional mask near-field using an off-axis illumination requires OPC models to introduce oblique incidence. In addition, the use of higher NA systems introduces high obliquity field components that can no longer be assimilated as normal incident waves. The introduction of oblique incidence requires other effects, such as corner rounding of mask features, to be considered, that are seldom taken into account in OPC modeling. In this paper, the effects of oblique incidence and corner rounding of mask features on resist contours of 2D structures (i.e. line-ends and corners) are studied. Rigorous electromagnetic simulations are performed to investigate the scattering properties of various lithographic 32nm node mask structures. Simulations are conducted using a three dimensional phase shift mask topology and an off-axis illumination at high NA. Aerial images are calculated and compared with those obtained from a classical normal incidence illumination. The benefits of using an oblique incidence to improve hot-spot prediction will be discussed.

  3. Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process

    NASA Astrophysics Data System (ADS)

    Hitomi, Keiichiro; Halle, Scott; Miller, Marshal; Graur, Ioana; Saulnier, Nicole; Dunn, Derren; Okai, Nobuhiro; Hotta, Shoji; Yamaguchi, Atuko; Komuro, Hitoshi; Ishimoto, Toru; Koshihara, Shunsuke; Hojo, Yutaka

    2016-07-01

    The model accuracy of optical proximity-effect correction (OPC) was investigated by two modeling methods for a 10-nm node process. The first method is to use contours of two-dimensional structures extracted from critical dimension-scanning electron microscope (CD-SEM) images combined with conventional CDs of one-dimensional structures. The accuracy of this hybrid OPC model was compared with that of a conventional OPC model, which was created with only CD data, in terms of root-mean-square (RMS) error for metal and contact layers of 10-nm node logic devices. Results showed improvement of model accuracy with the use of hybrid OPC modeling by 23% for contact layer and 18% for metal layer, respectively. The second method is to apply a correction technique for resist shrinkage caused by CD-SEM measurement to extracted contours for improving OPC model accuracy. The accuracy of OPC model with shrink correction was compared with that without shrink correction, and total RMS error was decreased by 12% by using the shrink correction technique. It can be concluded that the use of CD-SEM contours and the shrink correction of contours are effective to improve the accuracy of OPC model for the 10-nm node process.

  4. Combined dose and geometry correction (DMG) for low energy multi electron beam lithography (5kV): application to the 16nm node

    NASA Astrophysics Data System (ADS)

    Martin, Luc; Manakli, Serdar; Bayle, Sebastien; Belledent, Jérôme; Soulan, Sebastien; Wiedemann, Pablo; Farah, Abdi; Schiavone, Patrick

    2012-03-01

    Lithography faces today many challenges to meet the ITRS road-map. 193nm is still today the only existing industrial option to address high volume production for the 22nm node. Nevertheless to achieve such a resolution, double exposure is mandatory for critical level patterning. EUV lithography is still challenged by the availability of high power source and mask defectivity and suffers from a high cost of ownership perspective. Its introduction is now not foreseen before 2015. Parallel to these mask-based technologies, maskless lithography regularly makes significant progress in terms of potential and maturity. The massively parallel e-beam solution appears as a real candidate for high volume manufacturing. Several industrial projects are under development, one in the US, with the KLA REBL project and two in Europe driven by IMS Nanofabrication (Austria; MAPPER (The Netherlands). Among the developments to be performed to secure the takeoff of the multi-beam technology, the availability of a rapid and robust data treatment solution will be one of the major challenges. Within this data preparation flow, advanced proximity effect corrections must be implemented to address the 16nm node and below. This paper will detail this process and compare correction strategies in terms of robustness and accuracy. It will be based on results obtained using a MAPPER tool within the IMAGINE program driven by CEA-LETI, in Grenoble, France. All proximity effects corrections and the dithering step were performed using the software platform Inscale® from Aselta Nanographics. One important advantage of Inscale® is the ability to combine both model based dose and geometry adjustment to accurately pattern critical features. The paper will focus on the advantage of combining those two corrections at the 16nm node instead of using only geometry corrections. Thanks to the simulation capability of Inscale®, pattern fidelity and correction robustness will be evaluated and compared between

  5. Black border, mask 3D effects: covering challenges of EUV mask architecture for 22nm node and beyond

    NASA Astrophysics Data System (ADS)

    Davydova, Natalia; van Setten, Eelco; de Kruif, Robert; Connolly, Brid; Fukugami, Norihito; Kodera, Yutaka; Morimoto, Hiroaki; Sakata, Yo; Kotani, Jun; Kondo, Shinpei; Imoto, Tomohiro; Rolff, Haiko; Ullrich, Albrecht; Jaganatharaja, Ramasubramanian Kottumakulal; Lammers, Ad; Oorschot, Dorothe; Man, Cheuk-Wah; Schiffelers, Guido; van Dijk, Joep

    2014-10-01

    Photomask is at the heart of a lithographic scanner's optical path. It cannot be left non-optimized from the imaging point of view. In this work we provide new insights on two critical aspects of EUV mask architecture: optimization of absorber for 16 nm half-pitch imaging and a systematic approach to black border EUV and DUV reflectance specifications. Good 16 nm imaging is demonstrated on ASML NXE:3300 EUV scanner. Currently a relatively high dose resist is used for imaging and the dose reduction is desired. Optimization (reduction) of absorber height and mask CD bias can allow for up to 30% dose reduction without essential contrast loss. Disadvantages of absorber height reduction are ~7 nm increase of best focus range through pitch and tighter absorber height mean to target and uniformity requirements. A disadvantage of a smaller reticle CD (down to 14 nm 1x) is manufacturing process uniformity over the reticle. A systematic approach of black border reflections impact on imaging is established. The image border is a pattern free dark area surrounding the image field and preventing exposure of the image field neighborhood on wafer. Currently accepted design of the black border on EUV reticle is an image border where the absorber and multilayer stack are etched down to the substrate and EUV reflectance is reduced to <0.05%. DUV reflectance of such a black border is about 5%. It is shown that a tighter DUV reflectance specification <1.5% is required driven by the impact of DUV reflections from the black border on imaging. NXE:3300 and NXE:3100 experimental imaging results are shown. The need of low DUV wavelength reflectance metrology (in the range 100-300 nm) is demonstrated using an estimated NXE scanner out-of-band DUV spectrum. Promising results of low DUV reflectance of the black border are shown.

  6. Phase-change memory technology with self-aligned μTrench cell architecture for 90 nm node and beyond

    NASA Astrophysics Data System (ADS)

    Pirovano, A.; Pellizzer, F.; Tortorelli, I.; Riganó, A.; Harrigan, R.; Magistretti, M.; Petruzza, P.; Varesi, E.; Redaelli, A.; Erbetta, D.; Marangon, T.; Bedeschi, F.; Fackenthal, R.; Atwood, G.; Bez, R.

    2008-09-01

    A novel self-aligned μTrench-based cell architecture for phase change memory (PCM) process is presented. The low programming current and the good dimensional control of the sub-lithographic features achieved with the μTrench structure are combined with a self-aligned patterning strategy that simplify the integration process in term of alignment tolerances and of number of critical masks. The proposed architecture has been integrated in a 90 nm 128 Mb vehicle based on a pnp bipolar junction transistor for the array selection. The good active and leakage currents achieved by the purposely optimized selecting transistors combined with programming currents of 300 μA of the storage element and good distributions measured on the 128 Mb array demonstrate the suitability of the proposed architecture for the production of high-density PCM arrays at 90 nm and beyond.

  7. A practical alternating PSM modeling and OPC approach to deal with 3D mask effects for the 65nm node and beyond

    NASA Astrophysics Data System (ADS)

    Drapeau, Martin; van Adrichem, Paul J. M.; van Look, Lieve; Kasprowicz, Bryan S.

    2005-11-01

    Alternating PSM (Alt-PSM) has been recognized as a logical Resolution Enhancement Technique (RET) candidate for the 65nm technology node. One of the key properties this technique has to offer is high Depth of Focus (DOF) and lower Mask Error Enhancement Factor (MEEF). The so-called image imbalance is an Alt-PSM specific property which, if not dealt with correctly, constrains the added DOF. Because of mask topography, intensity differences caused by light scattering become evident between π (180°) and zero degree phase shifters. This causes a line shift that is inversely proportional to the pitch. The traditional solution of applying a fixed trench bias increases the width if the π phase shifter to level out intensities and thus minimize image imbalance. This technique may no longer be sufficient at the 65nm technology node. With the requirement to print even smaller pitches together with a tighter Critical Dimension (CD) budget, intensity imbalance is a larger concern. It may be necessary to apply a pitch dependent or variable trench bias. In this paper, we present a practical OPC modeling approach that accounts for image imbalance. The 2D modeling approach uses boundary layers to represent the 3D effect of light scattering. We demonstrate that with the boundary layer model, it is possible to predict image imbalance caused by mask 3D effects. The model can then be used either to determine the nominal trench bias or can be integrated into the OPC engine to apply a variable trench bias. Results are compared to rigorous Electro Magnetic Field (EMF) simulations and experimental exposures using an ArF scanner, targeting pitches of 130nm and above.

  8. Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

    SciTech Connect

    Popovici, M. Swerts, J.; Redolfi, A.; Kaczer, B.; Aoulaiche, M.; Radu, I.; Clima, S.; Everaert, J.-L.; Van Elshocht, S.; Jurczak, M.

    2014-02-24

    Improved metal-insulator-metal capacitor (MIMCAP) stacks with strontium titanate (STO) as dielectric sandwiched between Ru as top and bottom electrode are shown. The Ru/STO/Ru stack demonstrates clearly its potential to reach sub-20 nm technology nodes for dynamic random access memory. Downscaling of the equivalent oxide thickness, leakage current density (J{sub g}) of the MIMCAPs, and physical thickness of the STO have been realized by control of the Sr/Ti ratio and grain size using a heterogeneous TiO{sub 2}/STO based nanolaminate stack deposition and a two-step crystallization anneal. Replacement of TiN with Ru as both top and bottom electrodes reduces the amount of electrically active defects and is essential to achieve a low leakage current in the MIM capacitor.

  9. Integrated photomask defect printability check, mask repair, and repair validation procedure for phase-shifting masks for the 45-nm node and beyond

    NASA Astrophysics Data System (ADS)

    Ehrlich, Christian; Buttgereit, Ute; Boehm, Klaus; Scheruebl, Thomas; Edinger, Klaus; Bret, Tristan

    2007-10-01

    The decreasing feature sizes as induced by the ITRS have a growing impact on the cost of current and future photolithographic masks. The assessment, repair and repair validation of these expensive masks has become a very substantial factor of the total mask production cost. The introduction of immersion lithography and the proposed introduction of double exposure strategies will further amplify this trend. In order to make the whole procedure more manageable in a production environment, with its constraints on timing and resource allocation, a seamless workflow of the repair and validation procedure is sought. A proposed way to achieve this is the set up of a dedicated tool set with a backbone infrastructure designed for this workflow as well as for the specific high resolution task. In this paper we concentrate on masks with feature sizes relevant for the 45nm node and defects with typical size and shape as they appear in production. Phase shifting masks with synthetic defects have been manufactured and the printability of the defects is analyzed with an AIMS TM45-193i. In part the defect outline and three-dimensional shape as well as further characteristics have been visualized with an electron microscope, prior to repairing them with an electron beam based repair system. In addition we will show the behaviour of the phase of the mask in a region of interest, that is in this case the repair area and its immediate vicinity. This will be done by a special new tool, named Phame ®, developed for measuring the actual phase of smallest mask features with a high spatial resolution. In the conclusion we will give an outlook how the proposed workflow and the how the employed technologies will influence the masks that are expected to emerge for the 32nm node.

  10. Advanced mask technique to improve bit line CD uniformity of 90 nm node flash memory in low-k1 lithography

    NASA Astrophysics Data System (ADS)

    Kim, Jong-doo; Choi, Jae-young; Kim, Jea-hee; Han, Jae-won

    2008-10-01

    As devices size move toward 90nm technology node or below, defining uniform bit line CD of flash devices is one of the most challenging features to print in KrF lithography. There are two principal difficulties in defining bit line on wafer. One is insufficient process margin besides poor resolution compared with ArF lithography. The other is that asymmetric bit line should be made for OPC(Optical Proximity Correction) modeling. Therefore advanced ArF lithography scanner should be used for define bit line with RETs (Resolution Enhancement Techniques) such as immersion lithography, OPC, PSM(Phase Shift Mask), high NA(Numerical Aperture), OAI(Off-Axis Illumination), SRAF(Sub-resolution Assistant Feature), and mask biasing.. Like this, ArF lithography propose the method of enhancing resolution, however, we must spend an enormous amount of CoC(cost of ownership) to utilize ArF photolithography process than KrF. In this paper, we suggest method to improve of bit line CD uniformity, patterned by KrF lithographic process in 90nm sFlash(stand alone Flash) devices. We applied new scheme of mask manufacturing, which is able to realize 2 different types of mask, binary and phase-shift, into one plate. Finally, we could get the more uniform bit lines and we expect to get more stable properties then before applying this technique.

  11. Optimization of resist shrink techniques for contact hole and metal trench ArF lithography at the 90-nm technology node

    NASA Astrophysics Data System (ADS)

    Wallace, Christine; Schacht, Jochen; Huang, I. H.; Hsu, Ruei H.

    2004-05-01

    Two fundamentally different approaches for chemical ArF resist shrinkage are evaluated and integrated into process flows for 90 nm technology node. The chemical shrink and the corresponding gain in process window is studied in detail for different resist types with respect to CD uniformity through pitch, linearity and resist profiles. For both, SAFIER and RELACS material, the sensitivity of the shrink process with respect to the baking temperature is characterized by a temperature matrix to check process stability, and optimized conditions are found offering an acceptable amount of shrinkage at contact and trench levels. For the SAFIER material, thermal flow contributes to the chemical shrink which is a function of the photoresist chemistry and its hydrodynamic properties depending on the resists" glass transition temperature (Tg) and the baking temperature: at baking temperatures close to Tg, a proximity and pattern dependent shrink is observed. For a given resist, line-space patterns and contact holes shrink differently, and their resist profiles are affected significantly. Additionally, the chemical shrinkage depends on the size of contact holes and resist profile prior to the application of the SAFIER process. At baking temperatures below Tg some resists exhibit no shrink at all. The RELACS technique offers a constant shrink for contacts at various pitches and sizes. This shrink can be moderately adjusted and controlled by varying the mixing bake temperature which is generally and preferably below the glass transistion temperature of the resist, therefore no resist profile degradation is observed. A manufacturable process with a shrink of 20nm using RELACS at the contact layer is demonstrated. Utilizing an increased reticle bias in combination with an increased CD target prior to the chemical shrink, the common lithography process window at contact layer was increased by 0.15um. The results also indicate a possibility for an extension of the shrink to greater

  12. PINS-3X Operations

    SciTech Connect

    E.H. Seabury

    2013-09-01

    Idaho National Laboratory’s (INL’s) Portable Isotopic Neutron Spectroscopy System (PINS) non-intrusively identifies the chemical fill of munitions and sealed containers. The PINS-3X variant of the system is used to identify explosives and uses a deuterium-tritium (DT) electronic neutron generator (ENG) as the neutron source. Use of the system, including possession and use of the neutron generator and shipment of the system components requires compliance with a number of regulations. This report outlines some of these requirements as well as some of the requirements in using the system outside of INL.

  13. Integration and automation of DoseMapper in a logic fab APC system: application for 45/40/28nm node

    NASA Astrophysics Data System (ADS)

    Le Gratiet, Bertrand; Salagnon, Christophe; de Caunes, Jean; Mikolajczak, Marc; Morin, Vincent; Chojnowski, Nicolas; Sundermann, Frank; Massin, Jean; Pelletier, Alice; Metz, Joel; Blancquaert, Yoann; Bouyssou, Regis; Pelissier, Arthur; Belmont, Olivier; Strapazzon, Anne; Phillips, Anna; Devoivre, Thierry; Bernard, Emilie; Batail, Estelle; Thevenon, Lionel; Bry, Benedicte; Bernard-Granger, Fabrice; Oumina, Ahmed; Baron, Marie-Pierre; Gueze, Didier

    2012-03-01

    The main difficulty related to DoseMapper correction is to generate an appropriate CD datacollection to feed DoseMapper and to generate DoseRecipe in a user friendly way, especially with a complex process mix. We could heavily measure the silicon and create, in feedback mode, the corresponding DoseRecipe. However, such approach in a logic fab becomes a heavy duty due to the number of different masks / product / processes. We have observed that process CD variability is significantly depending on systematic intrawafer and intrafield CD footprints that can be measured and applied has generic pre-correction for any new product/mask process in-line. The applied CD correction is based on a CD (intrafield: Mask + Straylight & intrawafer: Etch Bias) variability "model" handled by the FAB APC (Advanced Process Control). - Individual CD profile correction component are generated "off-line" (1) for Intrafield Mask via automatic CD extraction from a Reticle CD database (2) for Intrafield Straylight via a CD "model" (3) for Intrawafer Etch Bias via engineering input based on process monitoring. - These CD files are handled via the FAB APC/automation system which is remotely taking control of DoseMapper server via WEB services, so that CD profiles are generated "off-line" (before the lot is being processed) and stored in a profile database while DoseRecipes are created "real-time" on demand via the automation when the lot comes to the scanner to be processed. DoseRecipe and CD correction profiles management is done via the APC system. The automated DoseRecipe creation is now running since the beginning of 2011 contributing to bring both intrafield and intrawafer GATE CDu below 1nm 3sigma, for 45/40 & 28nm nodes.

  14. W versus Co-Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22 nm Technology Nodes

    NASA Astrophysics Data System (ADS)

    Veloso, Anabela; Aik Chew, Soon; Schram, Tom; Dekkers, Harold; Van Ammel, Annemie; Witters, Thomas; Tielens, Hilde; Heylen, Nancy; Devriendt, Katia; Sebaai, Farid; Brus, Stephan; Ragnarsson, Lars-Åke; Pantisano, Luigi; Eneman, Geert; Carbonell, Laure; Richard, Olivier; Favia, Paola; Geypen, Jef; Bender, Hugo; Higuchi, Yuichi; Phatak, Anup; Thean, Aaron; Horiguchi, Naoto

    2013-04-01

    In this work we provide a comprehensive evaluation of a novel, low-resistance Co-Al alloy vs W to fill aggressively scaled gates with high aspect-ratios [gate height (Hgate) ˜50-60 nm, gate length (Lgate) ≥20-25 nm]. We demonstrate that, with careful liner/barrier materials selection and tuning, well-behaved devices are obtained, showing: tight gate resistance (Rgate) distributions down to Lgate˜20 nm, low threshold voltage (VT) values, comparable DC and bias temperature instability (BTI) behavior, and improved RF response. The impact of fill-metals intrinsic stress, including the presence of occasional voids in narrow W-gates, on devices fabrication and performance is also explored.

  15. Advanced TEM Characterization for the Development of 28-14nm nodes based on fully-depleted Silicon-on-Insulator Technology

    NASA Astrophysics Data System (ADS)

    Servanton, G.; Clement, L.; Lepinay, K.; Lorut, F.; Pantel, R.; Pofelski, A.; Bicais, N.

    2013-11-01

    The growing demand for wireless multimedia applications (smartphones, tablets, digital cameras) requires the development of devices combining both high speed performances and low power consumption. A recent technological breakthrough making a good compromise between these two antagonist conditions has been proposed: the 28-14nm CMOS transistor generations based on a fully-depleted Silicon-on-Insulator (FD-SOI) performed on a thin Si film of 5-6nm. In this paper, we propose to review the TEM characterization challenges that are essential for the development of extremely power-efficient System on Chip (SoC).

  16. Dual frequency mid-gap capacitively coupled plasma (m-CCP) for conventional and DSA patterning at 10nm node and beyond

    NASA Astrophysics Data System (ADS)

    Mohanty, Nihar; Ko, Akiteru; Cole, Christopher; Rastogi, Vinayak; Kumar, Kaushik; Schmid, Gerard; Farrell, Richard; Ryan, Todd; Hosler, Erik; Xu, Ji; Preil, Moshe

    2014-03-01

    In this paper, we demonstrate the unique advantage of dual-frequency mid-gap capacitively coupled plasma (m-CCP) in advanced node patterning process with regard to etch rate / depth uniformity and critical dimension (CD) control in conjunction with wider process window for aspect ratio dependent & microloading effects. Unlike the non-planar plasma sources, the simple design of the mid-gap CCPs enables both metal and non-metal hard-mask based patterning, which provides essential flexibility for conventional and DSA patterning. We present data on both, the conventional multi patterning as well as DSA patterning for trenches / fins and holes. Rigorous CD control and CDU is shown to be crucial for multi patterning as they lead to undesirable odd-even delta and pitch walking. For DSA patterning, co-optimized Ne / Vdc of the dual frequency CCPs would be demonstrated to be advantageous for higher organic-to-organic selectivity during co-polymer etching.

  17. Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits

    NASA Astrophysics Data System (ADS)

    Strangio, S.; Palestri, P.; Lanuzza, M.; Esseni, D.; Crupi, F.; Selmi, L.

    2017-02-01

    In this work, a benchmark for low-power digital applications of a III-V TFET technology platform against a conventional CMOS FinFET technology node is proposed. The analysis focuses on full-adder circuits, which are commonly identified as representative of the digital logic environment. 28T and 24T topologies, implemented in complementary-logic and transmission-gate logic, respectively, are investigated. Transient simulations are performed with a purpose-built test-bench on each single-bit full adder solution. The extracted delays and energy characteristics are post-processed and translated into figures-of-merit for multi-bit ripple-carry-adders. Trends related to the different full-adder implementations (for the same device technology platform) and to the different technology platforms (for the same full-adder topology) are presented and discussed.

  18. Effects of deprotonation efficiency of protected units on line edge roughness and stochastic defect generation in chemically amplified resist processes for 11 nm node of extreme ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

    2014-11-01

    The deprotonation of polymer radical cations plays an important role in the acid generation in chemically amplified resists upon exposure to ionizing radiation. In this study, the effects of the deprotonation efficiency of protected units of a resist polymer on line edge roughness (LER) and stochastic defect generation were investigated. The suppression of stochastic effects is essential for the realization of high-volume production of semiconductor devices with an 11 nm critical dimension using extreme ultraviolet (EUV) lithography. By increasing the deprotonation efficiency, the chemical contrast (latent image quality) was improved; however, the protected unit number fluctuation did not significantly change. Consequently, LER and the probability of stochastic defect generation were reduced. This effect was prominent when the protection ratio was close to 100%.

  19. Optimization of self-aligned double patterning (SADP)-compliant layout designs using pattern matching for 10nm technology nodes and beyond

    NASA Astrophysics Data System (ADS)

    Wang, Lynn T.; Schroeder, Uwe Paul; Woo, Youngtag; Zeng, Jia; Madhavan, Sriram; Capodieci, Luigi

    2016-03-01

    A pattern-based methodology for optimizing Self-Aligned Double Patterning (SADP)-compliant layout designs is developed based on detecting cut-induced hotspot patterns and replacing them with pre-characterized fixing solutions. A pattern library with predetermined fixing solutions is built. A pattern-based engine searches for matching patterns in the layout designs. When a match is found, the engine opportunistically replaces the detected pattern with a pre-characterized fixing solution, preserving only the design rule check-clean replacements. The methodology is demonstrated on a 10nm routed block. A small library of fourteen patterns reduced the number of cut-induced design rule check violations by 100% and lithography hotspots by 23%.

  20. In-field in-design metrology target integration for advanced CD and overlay process control via DoseMapper and high order overlay correction for 28nm and beyond logic node

    NASA Astrophysics Data System (ADS)

    Ducoté, J.; Bernard-Granger, F.; Le-Gratiet, B.; Bouyssou, R.; Bianchini, R.; Marin, J. C.; Baron, M. P.; Gardet, F.; Devoivre, T.; Batail, E.; Pouly, C.; Gueze, D.; Thevenon, L.

    2013-04-01

    Current process tool performances are getting significantly enhanced by the adoption of advanced process correction application such as DoseMapper for CD or high order overlay correction for overlay. These process control capabilities need appropriate sampling to be efficient. Usually for in field metrology sampling we used to operate with metrology targets placed inside the scribe lines, however in this case the larger the chip the less scribe lines we have and the less relevant is the intrafield sampling. As ST is an IDM we have the opportunity to share with our design division this process control problematic. Since 45/40nm node we have started to put in place the so-called EMET (Embedded Metrology Target) strategy which consists in in-design metrology targets placement. Initially these targets were placed using tiling tools but it soon appeared to be not efficient and even impossible when we talk about targets involving complex metal stack. This papers talks about our current embedded metrology target strategy which has been adapted to enable appropriate target placement for CD and overlay for all critical layers from active to via/metal's. Solutions needed to be put in place to (i) keep the circuit safe by using Design Rule clean metrology targets, (ii) be highly visible by the designers by placing targets at chip floor planning definition (iii) be upgradable by enabling target re-designs without impact on chip design version.

  1. Lymph nodes

    MedlinePlus Videos and Cool Tools

    ... and conveying lymph and by producing various blood cells. Lymph nodes play an important part in the ... the microorganisms being trapped inside collections of lymph cells or nodes. Eventually, these organisms are destroyed and ...

  2. A 3 x 2 Achievement Goal Model

    ERIC Educational Resources Information Center

    Elliot, Andrew J.; Murayama, Kou; Pekrun, Reinhard

    2011-01-01

    In the present research, a 3 x 2 model of achievement goals is proposed and tested. The model is rooted in the definition and valence components of competence, and encompasses 6 goal constructs: task-approach, task-avoidance, self-approach, self-avoidance, other-approach, and other-avoidance. The results from 2 studies provided strong support for…

  3. The SEMATECH Berkeley MET pushing EUV development beyond 22-nm half pitch

    SciTech Connect

    Naulleau, P.; Anderson, C. N.; Backlea-an, L.-M.; Chan, D.; Denham, P.; George, S.; Goldberg, K. A.; Hoef, B.; Jones, G.; Koh, C.; La Fontaine, B.; McClinton, B.; Miyakawa, R.; Montgomery, W.; Rekawa, S.; Wallow, T.

    2010-03-18

    Microfield exposure tools (METs) play a crucial role in the development of extreme ultraviolet (EUV) resists and masks, One of these tools is the SEMATECH Berkeley 0.3 numerical aperture (NA) MET, Using conventional illumination this tool is limited to approximately 22-nm half pitch resolution. However, resolution enhancement techniques have been used to push the patterning capabilities of this tool to half pitches of 18 nm and below, This resolution was achieved in a new imageable hard mask which also supports contact printing down to 22 nm with conventional illumination. Along with resolution, line-edge roughness is another crucial hurdle facing EUV resists, Much of the resist LER, however, can be attributed to the mask. We have shown that intenssionally aggressive mask cleaning on an older generation mask causes correlated LER in photoresist to increase from 3.4 nm to 4,0 nm, We have also shown that new generation EUV masks (100 pm of substrate roughness) can achieve correlated LER values of 1.1 nm, a 3x improvement over the correlated LER of older generation EUV masks (230 pm of substrate roughness), Finally, a 0.5-NA MET has been proposed that will address the needs of EUV development at the 16-nm node and beyond, The tool will support an ultimate resolution of 8 nm half-pitch and generalized printing using conventional illumination down to 12 nm half pitch.

  4. Study towards integration of In0.53Ga0.47As on 300 mm Si for CMOS sub-7 nm node: Development of thin graded InxGa1-xAs buffers on GaAs

    NASA Astrophysics Data System (ADS)

    Mols, Y.; Kunert, B.; Gaudin, G.; Langer, R.; Caymax, M.

    2016-10-01

    High-quality InxGa1-xAs layers with indium composition between 0.46 and 0.50 have been grown in a 300 mm industrial MOVPE reactor using ≤1 μm thin InxGa1-xAs buffers on 2″ GaAs substrates. Aggressive grading of 3.7 to 3.8% misfit/μm, fast growth rates in the range of 0.2-2.2 nm/s and low growth temperatures of 530 °C and 450 °C were used. AFM reveals a significant difference in root mean square surface roughness of 3.6 nm (530 °C) versus 15.5 nm (450 °C). Cross-section TEM analysis shows that for both temperatures threading dislocations are effectively confined to the buffer region. However, at 450 °C phase separation is observed in the upper part of the structure. From plan-view TEM threading dislocation densities as low as 1×105 cm-2 and 4.5×105 cm-2 are estimated for growth at 530 °C and 450 °C, respectively.

  5. Can DUV take us below 100 nm?

    NASA Astrophysics Data System (ADS)

    Finders, Jo; Jorritsma, Louis; Eurlings, Mark; Moerman, Richard; van Greevenbroek, Henk; van Schoot, Jan B.; Flagello, Donis G.; Socha, Robert J.; Stammler, Thomas

    2001-09-01

    Currently, the 130 nm SIA node is being implemented at leading edge semiconductor manufacturing facilities. Previously, this node appeared to be the insertion point for 193 nm lithography. However, it is evident that for the majority of applications 248 nm will be the wavelength of choice. This once again raises the question how far DUV lithography (248 nm) will take us. To investigate this, overlay, imaging and productivity related issues have to be considered. Although these items become more and more linked at low k1-factors (e.g. overlay and imaging), this paper will focus on some of the imaging related topics.

  6. Reconfigureable network node

    DOEpatents

    Vanderveen, Keith B.; Talbot, Edward B.; Mayer, Laurence E.

    2008-04-08

    Nodes in a network having a plurality of nodes establish communication links with other nodes using available transmission media, as the ability to establish such links becomes available and desirable. The nodes predict when existing communications links will fail, become overloaded or otherwise degrade network effectiveness and act to establish substitute or additional links before the node's ability to communicate with the other nodes on the network is adversely affected. A node stores network topology information and programmed link establishment rules and criteria. The node evaluates characteristics that predict existing links with other nodes becoming unavailable or degraded. The node then determines whether it can form a communication link with a substitute node, in order to maintain connectivity with the network. When changing its communication links, a node broadcasts that information to the network. Other nodes update their stored topology information and consider the updated topology when establishing new communications links for themselves.

  7. The Y 3-xBa 3+xCu 6O 14+δ system of superconductors

    NASA Astrophysics Data System (ADS)

    Umarji, A. M.; Somasundaram, P.; Ganapathi, L.; Rao, C. N. R.

    1988-04-01

    Members of the Y 3-xBa 3+xCu 6O 14+δ system prepared at relatively low temperatures by nitrate decomposition have a tetragonal structure and show superconducting transitions (zero-resistance) around 50K.

  8. Swollen lymph nodes

    MedlinePlus

    ... lymph nodes, including: Seizure medicines such as phenytoin Typhoid immunization Which lymph nodes are swollen depends on ... hard, irregular, or fixed in place. You have fever, night sweats, or unexplained weight loss. Any node ...

  9. Sentinel node biopsy (image)

    MedlinePlus

    Sentinel node biopsy is a technique which helps determine if a cancer has spread (metastasized), or is contained locally. When a ... is closest to the cancer site. Sentinel node biopsy is used to stage many kinds of cancer, ...

  10. Lymph node biopsy

    MedlinePlus

    ... Performed The test is used to diagnose cancer, sarcoidosis, or an infection (such as tuberculosis): When you ... of lymph nodes and other organs and tissues ( sarcoidosis ) Risks Lymph node biopsy may result in any ...

  11. Multiple node remote messaging

    DOEpatents

    Blumrich, Matthias A.; Chen, Dong; Gara, Alan G.; Giampapa, Mark E.; Heidelberger, Philip; Ohmacht, Martin; Salapura, Valentina; Steinmacher-Burow, Burkhard; Vranas, Pavlos

    2010-08-31

    A method for passing remote messages in a parallel computer system formed as a network of interconnected compute nodes includes that a first compute node (A) sends a single remote message to a remote second compute node (B) in order to control the remote second compute node (B) to send at least one remote message. The method includes various steps including controlling a DMA engine at first compute node (A) to prepare the single remote message to include a first message descriptor and at least one remote message descriptor for controlling the remote second compute node (B) to send at least one remote message, including putting the first message descriptor into an injection FIFO at the first compute node (A) and sending the single remote message and the at least one remote message descriptor to the second compute node (B).

  12. Modular sensor network node

    DOEpatents

    Davis, Jesse Harper Zehring; Stark, Jr., Douglas Paul; Kershaw, Christopher Patrick; Kyker, Ronald Dean

    2008-06-10

    A distributed wireless sensor network node is disclosed. The wireless sensor network node includes a plurality of sensor modules coupled to a system bus and configured to sense a parameter. The parameter may be an object, an event or any other parameter. The node collects data representative of the parameter. The node also includes a communication module coupled to the system bus and configured to allow the node to communicate with other nodes. The node also includes a processing module coupled to the system bus and adapted to receive the data from the sensor module and operable to analyze the data. The node also includes a power module connected to the system bus and operable to generate a regulated voltage.

  13. Y 3-xBa 3+xCu 6O 14+δ system: A new family of superconductors

    NASA Astrophysics Data System (ADS)

    Umarji, A. M.; Somasundaram, P.; Rao, C. N. R.

    1988-06-01

    Compounds of the Y 3-x Ba 3+x Cu 6O 14+δ system, which YBa 2Cu 3O 7-δ (x = 1) is member, have been prepared. A relatively low temperature nitrate decomposition method gives almost single phase compounds with tetragonal structure. The phases are metastable and show superconducting transitions (zero-resistance) around 50K.

  14. Growth and Faraday rotation characteristics of Tb3-xNdxGa5O12 single crystal

    NASA Astrophysics Data System (ADS)

    Wang, XiangYong; Yang, Lei; Chen, Zhe; Wang, Jun; Hong, Jiaqi; Wang, Yaqi; Shi, Chunjun; Zhang, Peixiong; Zhang, Lianhan; Hang, Yin

    2015-09-01

    Tb3-xNdxGa5O12 single crystal with dimension of Φ22 mm × 28 mm and a good optical quality was grown by the Czochralski method. X-ray powder diffraction was carried out and lattice parameters were calculated, which showed that the single crystal belongs to cubic crystal system. The transmission spectrum in the wavelength range of 450-1500 nm, which indicated the crystal has low absorption coefficient at 900-1450 nm. The Verdet constants of Tb3-xNdxGa5O12 at 532, 633 and 1064 nm wavelengths calculated by the extinction method are 225, 145 and 41 radm-1 T-1, respectively, which are larger than that of commercial TGG (Tb3Ga5O12) reported. The magneto-optical figures of merit of the crystal calculated is 3162°/dB at 1064 nm, and the extinction ratio is larger than that of commercial TGG.

  15. Popliteal lymph node dissection.

    PubMed

    Sholar, Alina; Martin, Robert C G; McMasters, Kelly M

    2005-02-01

    Most sentinel nodes are located in the cervical, axillary, and inguinal nodal basins. Sometimes, however, sentinel nodes exist outside these traditional nodal basins. Popliteal nodal metastasis is relatively uncommon, and popliteal lymph node dissection is infrequently necessary. However, with lymphoscintigraphic identification of popliteal sentinel nodes, surgeons are more frequently called on to address the popliteal nodal basin. Therefore, knowledge of the anatomy and surgical technique for popliteal lymphadenectomy is essential. This case study illustrates the importance of considering the approach to the popliteal lymph node basin for patients with melanoma.

  16. Dynamic Interaction of Stress Granules, DDX3X, and IKK-α Mediates Multiple Functions in Hepatitis C Virus Infection.

    PubMed

    Pène, Véronique; Li, Qisheng; Sodroski, Catherine; Hsu, Ching-Sheng; Liang, T Jake

    2015-05-01

    The ubiquitous ATP-dependent RNA helicase DDX3X is involved in many cellular functions, including innate immunity, and is a pivotal host factor for hepatitis C virus (HCV) infection. Recently, we showed that DDX3X specifically recognizes the HCV 3' untranslated region (UTR), leading to the activation of IKK-α and a cascade of lipogenic signaling to facilitate lipid droplet biogenesis and viral assembly (Q. Li, V. Pene, S. Krishnamurthy, H. Cha, and T. J. Liang, Nat Med 19:722-729, 2013, http://dx.doi.org/10.1038/nm.3190). The interaction of DDX3X with HCV core protein seems to be dispensable for its proviral role. In this study, through systematic imaging and biochemical and virologic approaches, we identified a dynamic association between DDX3X and various cellular compartments and viral elements mediating multiple functions of DDX3X in productive HCV infection. Upon HCV infection, the HCV 3'UTR interacts with DDX3X and IKK-α, which redistribute to speckle-like cytoplasmic structures shown to be stress granules (SGs). As viral proteins accumulate in infected cells, DDX3X granules together with SG-associated proteins redistribute and colocalize with HCV core protein around lipid droplets (LDs). IKK-α, however, does not relocate to the LD but translocates to the nucleus. In HCV-infected cells, various HCV nonstructural proteins also interact or colocalize with DDX3X in close proximity to SGs and LDs, consistent with the tight juxtaposition of the replication complex and the assembly site at the surface of LDs. Short interfering RNA (siRNA)-mediated silencing of DDX3X and multiple SG components markedly inhibits HCV infection. Our data suggest that DDX3X initiates a multifaceted cellular program involving dynamic associations with HCV RNA and proteins, IKK-α, SG, and LD surfaces for its crucial role in the HCV life cycle. IMPORTANCE DDX3X is a proviral host factor for HCV infection. Recently, we showed that DDX3X binds to the HCV 3'UTR, activating IKK-α and

  17. Sol-Gel Synthesis of La(0.6)Sr(0.4)CoO(3-x) and Sm(0.5)Sr(0.5)CoO(3-x) Cathode Nanopowders for Solid Oxide Fuel Cells

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P.; Wise, Brent

    2011-01-01

    Nanopowders of La(0.6)Sr(0.4)CoO(3-x) (LSC) and Sm(0.5)Sr(0.5)CoO(3-x) (SSC) compositions, which are being investigated as cathode materials for intermediate temperature solid oxide fuel cells (IT-SOFC) with La(Sr)Ga(Mg)O(3-x) (LSGM) as the electrolyte, were synthesized by low-temperature sol-gel method using metal nitrates and citric acid. Thermal decomposition of the citrate gels was followed by simultaneous DSC/TGA methods. Development of phases in the gels, on heat treatments at various temperatures, was monitored by x-ray diffraction. Solgel powders calcined at 550 to 1000 C consisted of a number of phases. Single perovskite phase La(0.6)Sr(0.4)CoO(3-x) or Sm(0.5)Sr(0.5)CoO(3-x) powders were obtained at 1200 and 1300 C, respectively. Morphological analysis of the powders calcined at various temperatures was done by scanning electron microscopy. The average particle size of the powders was approx.15 nm after 700 C calcinations and slowly increased to 70 to 100 nm after heat treatments at 1300 to 1400 C.

  18. Protocol for multiple node network

    NASA Technical Reports Server (NTRS)

    Kirkham, Harold (Inventor)

    1994-01-01

    The invention is a multiple interconnected network of intelligent message-repeating remote nodes which employs an antibody recognition message termination process performed by all remote nodes and a remote node polling process performed by other nodes which are master units controlling remote nodes in respective zones of the network assigned to respective master nodes. Each remote node repeats only those messages originated in the local zone, to provide isolation among the master nodes.

  19. Protocol for multiple node network

    NASA Technical Reports Server (NTRS)

    Kirkham, Harold (Inventor)

    1995-01-01

    The invention is a multiple interconnected network of intelligent message-repeating remote nodes which employs an antibody recognition message termination process performed by all remote nodes and a remote node polling process performed by other nodes which are master units controlling remote nodes in respective zones of the network assigned to respective master nodes. Each remote node repeats only those messages originated in the local zone, to provide isolation among the master nodes.

  20. Maximizing the photo catalytic and photo response properties of multimodal plasmonic Ag/WO(3-x) heterostructure nanorods by variation of the Ag size.

    PubMed

    Ghosh, Sirshendu; Saha, Manas; Paul, Sumana; De, S K

    2015-11-21

    High quality nearly monodisperse colloidal WO3-x nanorods with an aspect ratio ∼18 were synthesized using the thermal decomposition technique. The effects of a capping agent and an activating agent on the nanorod aspect ratio have been studied. Excess carrier concentration due to large oxygen vacancy and smaller width of the nanorods compared to the Bohr exciton radius gives rise to an increase of the band gap. Shape anisotropy in nanorods results in two plasmonic absorbance bands at about 890 nm and 5900 nm corresponding to short axis and long axis plasmon modes. The short axis mode reveals an excellent plasmonic sensitivity of ∼345 nm per refractive index. A plasmonic photocatalysis process based on WO3-x nanorods has been developed to synthesize Ag/WO3-x heterostructures consisting of multiple Ag dots with ∼2 nm size, randomly decorated on the surface of the WO3-x nanorods. Long time irradiation leads to an increase in the size (5 nm) of Ag nanocrystals concomitant with decrease in the number of Ag nanocrystals attached per WO3-x nanorod. Plasmonic photocatalysis followed by thermal annealing produces only one Ag nanocrystal of size ∼10 nm on each WO3-x nanorod. Red shifting and broadening of plasmon bands of Ag nanocrystals and WO3-x nanorods confirm the formation of heterostructures between the metal and semiconductor. Detailed transmission electron micrograph analysis indicates the epitaxial growth of Ag nanocrystals onto WO3-x nanorods. A high photocurrent gain of about 4000 is observed for Ag (10 nm)/WO3-x heterostructures. The photodegradation rate for Rhodamine-B and methylene blue is maximum for Ag (10 nm)/WO3-x heterostructures due to efficient electron transfer from WO3-x nanorods to Ag nanocrystals. Metal plasmon-semiconductor exciton coupling, prominent plasmon absorbance of metal nanoparticles, and formation of an epitaxial interface are found to be the important factors to achieve the maximum photocatalytic activity and fabrication of a

  1. Simultaneous Synthesis of WO3-x Quantum Dots and Bundle-Like Nanowires Using a One-Pot Template-Free Solvothermal Strategy and Their Versatile Applications.

    PubMed

    Wang, Yao; Wang, Xiaoxia; Xu, Yuanhong; Chen, Tao; Liu, Mengli; Niu, Fushuang; Wei, Shuang; Liu, Jingquan

    2017-04-01

    Tungsten oxide (WO3-x ), a new alternative to conventional semiconductor material, has attracted numerous attentions owning to its widespread potential applications. Various methods have been reported for the synthesis of WO3-x nanostructures such as nanowires or nanodots. However, templates or surfactants are often required for the synthesis, which significantly complicate the process and hinder the broad applications. Herein, one-pot template/surfactant-free solvothermal method is proposed to synthesize the WO3-x nanostructures including fluorescent quantum dots (QDs) and bundle-like nanowires simultaneously. The as-prepared WO3-x QDs can be well dispersed in aqueous medium, exhibit excellent photoluminescent properties, and show an average size of 3.25 ± 0.25 nm as evidenced by transmission electron microscopy. Meanwhile, the diameter of the WO3-x nanowires is found to be about 27.5 nm as manifested by the scanning electron microscope images. The generation mechanism for these two WO3-x nanostructures are systematically studied and proposed. The WO3-x QDs have been successfully applied in efficient fluorescent staining and specific ferric ion detection. Moreover, the WO3-x nanowires can be utilized as effective dielectric materials for electromagnetic wave absorption.

  2. Intramammary lymph nodes.

    PubMed Central

    Jadusingh, I. H.

    1992-01-01

    AIMS: To determine the prevalence and pathology of intramammary lymph nodes in breast specimens. METHODS: All breast specimens examined by a single pathologist over 70 months in a large teaching hospital were studied retrospectively. All the surgical pathology reports were reviewed. Relevant glass slides from cases in which intramammary lymph nodes were identified were also reexamined. RESULTS: Breast specimens (n = 682) were examined. Seven lymph nodes were found in five patients. The specimens comprised 533 biopsy specimens, 29 segmental resections, 22 reduction mammoplasties, 77 modified radical mastectomies and 20 gynecomastia mastectomies. No clinically relevant microscopical abnormalities were found in four lymph nodes and slight sinus histiocytosis was seen in two nodes. One node contained metastatic adenocarcinoma and benign glandular epithelial inclusions. CONCLUSION: Although rare, intramammary lymph nodes may be detected by careful gross examination of breast specimens even in the absence of clinical identification. They can occur in any quadrant of the breast and can display a variety of pathological conditions. Pathologists should be alert to the existence and potential importance of these lymph nodes. Images PMID:1452776

  3. Sentinel Lymph Node Biopsy

    MedlinePlus

    ... center of the chest (near the breastbone), cancer cells may spread first to lymph nodes inside the chest (under the breastbone) before they can be detected in the axilla. The number of lymph nodes in the axilla varies from person to person but usually ranges from 20 to ...

  4. Theory SkyNode

    NASA Astrophysics Data System (ADS)

    Wagner, Richard P.; Norman, M. L.

    2006-12-01

    A working example of a Basic SkyNode serving theoretical data will be presented. The data is taken from the Simulated Cluster Archive (a set of simulated galaxy clusters, where each cluster was computed using four different physics models). The Theory SkyNode tables contain columns of both computational and observational interest. Examples will be shown of using this theoretical data for comparison to data taken from observational SkyNodes, and vice versa. The relative ease of setting up the Theory SkyNode is of import, as it represents a clear way to present tabular theory data to the Virtual Observatory. Also, the Theory SkyNode provides a prototype for additional "theory catalogs", which wil be created from other simulations. This work is supported by the University of California Office of the President via UCDRD-LLNL award "Scientific Data Management". Travel funding was provided by the US NVO Summer School.

  5. Developing triploid (3X) apomictic eastern gamagrass hybrids

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Eastern gamagrass is a perennial warm-season bunchgrass native from Oklahoma and the Texas pan-handle to the east coast and has long been recognized as a highly productive and palatable forage. In 2004 a breeding project was initiated to develop a novel set of triploid (3X) true breeding apomictic ...

  6. Maximizing the photo catalytic and photo response properties of multimodal plasmonic Ag/WO3-x heterostructure nanorods by variation of the Ag size

    NASA Astrophysics Data System (ADS)

    Ghosh, Sirshendu; Saha, Manas; Paul, Sumana; de, S. K.

    2015-10-01

    High quality nearly monodisperse colloidal WO3-x nanorods with an aspect ratio ~18 were synthesized using the thermal decomposition technique. The effects of a capping agent and an activating agent on the nanorod aspect ratio have been studied. Excess carrier concentration due to large oxygen vacancy and smaller width of the nanorods compared to the Bohr exciton radius gives rise to an increase of the band gap. Shape anisotropy in nanorods results in two plasmonic absorbance bands at about 890 nm and 5900 nm corresponding to short axis and long axis plasmon modes. The short axis mode reveals an excellent plasmonic sensitivity of ~345 nm per refractive index. A plasmonic photocatalysis process based on WO3-x nanorods has been developed to synthesize Ag/WO3-x heterostructures consisting of multiple Ag dots with ~2 nm size, randomly decorated on the surface of the WO3-x nanorods. Long time irradiation leads to an increase in the size (5 nm) of Ag nanocrystals concomitant with decrease in the number of Ag nanocrystals attached per WO3-x nanorod. Plasmonic photocatalysis followed by thermal annealing produces only one Ag nanocrystal of size ~10 nm on each WO3-x nanorod. Red shifting and broadening of plasmon bands of Ag nanocrystals and WO3-x nanorods confirm the formation of heterostructures between the metal and semiconductor. Detailed transmission electron micrograph analysis indicates the epitaxial growth of Ag nanocrystals onto WO3-x nanorods. A high photocurrent gain of about 4000 is observed for Ag (10 nm)/WO3-x heterostructures. The photodegradation rate for Rhodamine-B and methylene blue is maximum for Ag (10 nm)/WO3-x heterostructures due to efficient electron transfer from WO3-x nanorods to Ag nanocrystals. Metal plasmon-semiconductor exciton coupling, prominent plasmon absorbance of metal nanoparticles, and formation of an epitaxial interface are found to be the important factors to achieve the maximum photocatalytic activity and fabrication of a high speed

  7. Pattern transfer processes for 157-nm lithography

    NASA Astrophysics Data System (ADS)

    Miyoshi, Seiro; Furukawa, Takamitsu; Watanabe, Hiroyuki; Irie, Shigeo; Itani, Toshiro

    2002-07-01

    We describe and evaluate three kinds of pattern transfer processes that are suitable for 157-nm lithography. These transfer processes are 1) a hard mask (HM) process using SiO as a HM material, 2) a HM process using an organic bottom anti-reflecting coating (BARC)/SiN structure, and 3) a bi- layer process using a silicon-containing resist and an organic film as the bottom layer. In all of these processes, the underlayer fo the resist acts as an anti-reflecting layer. For the HM processes, we patterned a newly developed fluorine-containing resist using a 157-nm microstepper, and transferred the resist patterns to the hard mask by reactive ion etching (RIE) with minimal critical dimension shift. Using the HM pattern, we then fabricated a 65nm Wsi/poly-Si gate pattern using a high-NA microstepper (NA=0.85). With the bi-layer process, we transferred a 60nm 1:1 lines and spaces pattern of a newly developed silicon-containing resist to a 300nm-thick organic film by RIE. The fabrication of a 65nm 1:1 gate pattern and 60nm 1:1 organic film patten clearly demonstrated that 157-nm lithography is the best candidate for fabricating sub-70nm node devices.

  8. Lymph node culture

    MedlinePlus

    Culture - lymph node ... or viruses grow. This process is called a culture. Sometimes, special stains are also used to identify specific cells or microorganisms before culture results are available. If needle aspiration does not ...

  9. Radiation Status of Sub-65 nm Electronics

    NASA Technical Reports Server (NTRS)

    Pellish, Jonathan A.

    2011-01-01

    Ultra-scaled complementary metal oxide semiconductor (CMOS) includes commercial foundry capabilities at and below the 65 nm technology node Radiation evaluations take place using standard products and test characterization vehicles (memories, logic/latch chains, etc.) NEPP focus is two-fold: (1) Conduct early radiation evaluations to ascertain viability for future NASA missions (i.e. leverage commercial technology development). (2) Uncover gaps in current testing methodologies and mechanism comprehension -- early risk mitigation.

  10. NASA N3-X with Turboelectric Distributed Propulsion

    NASA Technical Reports Server (NTRS)

    Felder, James L.

    2014-01-01

    Presentation summarizing the phase I study of the NASA N3-X turboelectric distributed propulsion power aircraft to the IMechE Disruptive Green Propulsion Technologies conference in London, UK November 16th and 17th, 2014. This presentation contains the results of a NASA internal study funded by the NASA Fixed Wing program to look at the application of turboelectric distributed propulsion to a long-range 300 seat aircraft. The reference aircraft is the Boeing 777-200LR. The N3-X reduced energy consumption by 70 compared to the 777-200LR, LTO NOx by 85 compared to the CAEP 6 limits, and noise by 32-64 EPNdB depending on engine placement compared to the stage 4 noise standards. This exceeded the N+3 metrics of reducing energy by 60, LTO NOx by 80, and noise by 52 EPNdB. Cruise NOx was not estimated, but likely meet the 80 reduction goal as well.

  11. Interstitial-boron solution strengthened WB3+x

    NASA Astrophysics Data System (ADS)

    Cheng, Xiyue; Zhang, Wei; Chen, Xing-Qiu; Niu, Haiyang; Liu, Peitao; Du, Kui; Liu, Gang; Li, Dianzhong; Cheng, Hui-Ming; Ye, Hengqiang; Li, Yiyi

    2013-10-01

    By means of variable-composition evolutionary algorithm coupled with density functional theory and in combination with aberration-corrected high-resolution transmission electron microscopy experiments, we have studied and characterized the composition, structure, and hardness properties of WB3+x (x < 0.5). We provide robust evidence for the occurrence of stoichiometric WB3 and non-stoichiometric WB3+x, both crystallizing in the metastable hP16 (P63/mmc) structure. No signs for the formation of the highly debated WB4 (both hP20 and hP10) phases were found. Our results rationalize the seemingly contradictory high-pressure experimental findings and suggest that the interstitial boron atom is located in the tungsten layer and vertically interconnect with four boron atoms, thus forming a typical three-center boron net with the upper and lower boron layers in a three-dimensional covalent network, which thereby strengthen the hardness.

  12. Sub-10 nm nanopantography

    NASA Astrophysics Data System (ADS)

    Tian, Siyuan; Donnelly, Vincent M.; Ruchhoeft, Paul; Economou, Demetre J.

    2015-11-01

    Nanopantography, a massively parallel nanopatterning method over large areas, was previously shown to be capable of printing 10 nm features in silicon, using an array of 1000 nm-diameter electrostatic lenses, fabricated on the substrate, to focus beamlets of a broad area ion beam on selected regions of the substrate. In the present study, using lens dimensional scaling optimized by computer simulation, and reduction in the ion beam image size and energy dispersion, the resolution of nanopantography was dramatically improved, allowing features as small as 3 nm to be etched into Si.

  13. Small polaron formation in porous WO3-x nanoparticle films

    NASA Astrophysics Data System (ADS)

    Ederth, J.; Hoel, A.; Niklasson, G. A.; Granqvist, C. G.

    2004-11-01

    Porous tungsten oxide nanoparticle films were prepared by reactive gas evaporation. The structure was studied by x-ray diffraction and scanning electron microscopy, and the oxygen nonstoichiometry was inferred by x-ray photoelectron spectroscopy, elastic recoil detection analysis, and neutron scattering. Specifically, the films consisted of WO3-x with 0.25

  14. Use of 3X3 integrated optic polarizer/splitters for a smart aerospace plane structure

    NASA Astrophysics Data System (ADS)

    Seshamani, Ramani; Alex, T. K.

    1991-10-01

    A fiber-optic/integrated optic optoelectronic neural computer approach to the design of an 'intelligent' aerospace structure is described, and the methodology of the approach is defined. A source consisting of a strained-layer QW laser emitting 100 micro-W at 978 nm and an Er-doped single-mode polarization preserving fiber laser with a gain of 3.9 dB/mW is assumed. The SNR for the aerospace plane is calculated with 49 sensing arms. A 441-path splitter is required; this is designed using an eight-stage multipath coupler based on a 3X3 polarizer/splitter as the basic repeating element. A surface-mounted implementation is suggested, which includes a 448-path switch, an integrated-optic coupler, a detector, an ADC, and a processor.

  15. Room-temperature and gram-scale synthesis of CsPbX3 (X = Cl, Br, I) perovskite nanocrystals with 50-85% photoluminescence quantum yields.

    PubMed

    Wei, Song; Yang, Yanchun; Kang, Xiaojiao; Wang, Lan; Huang, Lijian; Pan, Daocheng

    2016-05-26

    All inorganic CsPbX3 (X = Cl, Br, I) perovskite nanocrystals (PNCs) with 50-85% photoluminescence quantum yields and tunable emission in the range of 440-682 nm have been successfully synthesized at room temperature in open air. This facile strategy enables us to prepare gram-scale CsPbBr3 NCs with a PLQY approaching 80%.

  16. Electron-induced single event upsets in 28 nm and 45 nm bulk SRAMs

    DOE PAGES

    Trippe, J. M.; Reed, R. A.; Austin, R. A.; ...

    2015-12-01

    In this study, we present experimental evidence of single electron-induced upsets in commercial 28 nm and 45 nm CMOS SRAMs from a monoenergetic electron beam. Upsets were observed in both technology nodes when the SRAM was operated in a low power state. The experimental cross section depends strongly on both bias and technology node feature size, consistent with previous work in which SRAMs were irradiated with low energy muons and protons. Accompanying simulations demonstrate that δ-rays produced by the primary electrons are responsible for the observed upsets. Additional simulations predict the on-orbit event rates for various Earth and Jovian environmentsmore » for a set of sensitive volumes representative of current technology nodes. The electron contribution to the total upset rate for Earth environments is significant for critical charges as high as 0.2 fC. This value is comparable to that of sub-22 nm bulk SRAMs. Similarly, for the Jovian environment, the electron-induced upset rate is larger than the proton-induced upset rate for critical charges as high as 0.3 fC.« less

  17. Electron-induced single event upsets in 28 nm and 45 nm bulk SRAMs

    SciTech Connect

    Trippe, J. M.; Reed, R. A.; Austin, R. A.; Sierawski, B. D.; Weller, R. A.; Funkhouser, E. D.; King, M. P.; Narasimham, B.; Bartz, B.; Baumann, R.; Schrimpf, R. D.; Labello, R.; Nichols, J.; Weeden-Wright, S. L.

    2015-12-01

    In this study, we present experimental evidence of single electron-induced upsets in commercial 28 nm and 45 nm CMOS SRAMs from a monoenergetic electron beam. Upsets were observed in both technology nodes when the SRAM was operated in a low power state. The experimental cross section depends strongly on both bias and technology node feature size, consistent with previous work in which SRAMs were irradiated with low energy muons and protons. Accompanying simulations demonstrate that δ-rays produced by the primary electrons are responsible for the observed upsets. Additional simulations predict the on-orbit event rates for various Earth and Jovian environments for a set of sensitive volumes representative of current technology nodes. The electron contribution to the total upset rate for Earth environments is significant for critical charges as high as 0.2 fC. This value is comparable to that of sub-22 nm bulk SRAMs. Similarly, for the Jovian environment, the electron-induced upset rate is larger than the proton-induced upset rate for critical charges as high as 0.3 fC.

  18. Manufacturability of 2x-nm devices with EUV tool

    NASA Astrophysics Data System (ADS)

    Tawarayama, Kazuo; Nakajima, Yumi; Kyoh, Suigen; Aoyama, Hajime; Matsunaga, Kentaro; Magoshi, Shunko; Tanaka, Satoshi; Hayashi, Yumi; Mori, Ichiro

    2011-04-01

    Due to the promising development status of EUVL as a practical lithography technology for the 2x-nm node, we are continuing to evaluate its process liability using the EUV1 at Selete, which has an Off-Axis illumination capability. The resolution limit of the EUV1 for L&S patterns is currently 18 nm for dipole illumination, and 16 nm for aggressive dipole illumination. This study examined the critical points of EUVL for device manufacturing through wafer processes. The yield obtained from electrical measurements indicates the maturity of the technology, including the resist process, the tool, and the mask. Optimization of the resist and RIE processes significantly improved the yield. The final yields obtained from electrical measurements were 100% for hp 30 nm, 70% for hp 28 nm, and 40% for hp 26 nm. These results demonstrate EUV lithography to be a practical technology that is now suitable for 2x nm semiconductor manufacture.

  19. Albuquerque, NM, USA

    NASA Technical Reports Server (NTRS)

    1991-01-01

    Albuquerque, NM (35.0N, 106.5W) is situated on the edge of the Rio Grande River and flood plain which cuts across the image. The reddish brown surface of the Albuquerque Basin is a fault depression filled with ancient alluvial fan and lake bed sediments. On the slopes of the Manzano Mountains to the east of Albuquerque, juniper and other timber of the Cibola National Forest can be seen as contrasting dark tones of vegetation.

  20. A Feasibility Study of 50 nm Resolution with Low Energy Electron Beam Proximity Projection Lithography

    NASA Astrophysics Data System (ADS)

    Yoshizawa, Masaki; Savas, T. A.

    2002-01-01

    Patterns of 50 nm lines and spaces were demonstrated by low energy electron beam proximity lithography using 47-nm-thick poly methyl methacrylate (PMMA) and stencil masks fabricated by achromatic interference lithography (AIL). The result indicates the validity of the resolution analysis previously reported and the resolution capabilities of low energy electron beam proximity projection lithography (LEEPL) as a 50 nm node technology.

  1. Future application of e-beam repair tool beyond 3X generation

    NASA Astrophysics Data System (ADS)

    Kanamitsu, Shingo; Hirano, Takashi

    2010-05-01

    Currently, repair technology is one of the key factors in mask making process regarding TAT reduction and yield level enhancement. Since its commercial release EB repair tool has been commonly used for production line and contributed to high quality repair. But it is not guaranteed whether those conventional machines can keep up with future pattern reduction trend or not. In 2Xnm generation node some advanced exposure techniques seem to be adopted and that will inevitably require higher specification of repair machine. A simple lithography simulation predicts 5nm of indispensable repair accuracy for 2Xnm generation pattern. This number implies the necessity of upper class machine. Generally, the error budget of EB repair tool is composed of three to four components, stated another way mechanical stability, electrical (charging) uniformity, process stability, and graphical quality including software ability. If errors from those components are reduced, overall repair accuracy could be better. A suggestion which can improve those errors was issued last year from tool vender including new machine concept. We have conducted several kind of experiment in order to confirm the performance of new machine. In this paper, we will report the result of experiment and consider which part can effectively contribute to repair accuracy. And we have also evaluated its practical utility value for 2Xnm node by verifying actual application of some 3Xnm production masks.

  2. Tc(VII) Reduction Kinetics by Titanomagnetite (Fe3-xTixO4) Nanoparticles

    SciTech Connect

    Liu, Juan; Pearce, Carolyn I.; Qafoku, Odeta; Arenholz, Elke; Heald, Steve M.; Rosso, Kevin M.

    2012-09-01

    Technetium contamination remains a major environmental problem at nuclear reprocessing sites, such as at the Hanford nuclear reservation, Washington, U.S.A. Here we investigate the heterogeneous reduction of the highly soluble pertechnetate anion [Tc(VII)O4-] to sparingly soluble Tc(IV)-bearing solids by a novel and well-characterized set of mixed-valent titanium-doped magnetite nanoparticles, structurally and chemically analogous to titanomagnetites naturally present in Hanford sediments. Titanomagnetite (Fe3 xTixO4) nanoparticles (10-12 nm) with varying Ti content (0 ≤ x ≤ 0.53) were synthesized in aqueous suspension. Reaction with 10 and 30 μM Tc(VII) solution yielded fast exponentially decaying reduction kinetics with rates that increased with increasing solid-state Fe(II)/Fe(III) ratio in the nanoparticles, a characteristic systematically controlled by the Ti-content. Nanoparticles before and after reduction experiments and surface-associated products of Tc(VII) reduction were characterized using transmission electron microscopy (TEM), X-ray absorption nearedge spectroscopy (XANES), extended X-ray absorption fine structure spectroscopy (EXAFS), micro Xray diffraction (μ-XRD), X-ray absorption (XA) and X-ray magnetic circular dichroism (XMCD). A mechanistic reaction model was developed involving reduction of Tc(VII) to form Tc(IV)/Fe(III) solids by structural Fe(II) enriched at the nanoparticle surface, a reactive Fe(II) pool that during reaction is resupplied and sustained by outward migration of Fe(II) from the particle interior with concurrent inward migration of charge-balancing cationic vacancies in a ratio of 3:1. The reaction process was quantitatively linked to mass and electron balanced changes in the Fe3-xTixO4 nanoparticles, and the accessibility of structural Fe(II) from these phases was determined.

  3. Substrate patterning with NiOx nanoparticles and hot-wire chemical vapour deposition of WO3x and carbon nanostructures

    NASA Astrophysics Data System (ADS)

    Houweling, Z. S.

    2011-10-01

    The first part of the thesis treats the formation of nickel catalyst nanoparticles. First, a patterning technique using colloids is employed to create ordered distributions of monodisperse nanoparticles. Second, nickel films are thermally dewetted, which produces mobile species that self-arrange in non-ordered distributions of polydisperse particles. Third, the mobility of the nickel species is successfully reduced by the addition of air during the dewetting and the use of a special anchoring layer. Thus, non-ordered distributions of self-arranged monodisperse nickel oxide nanoparticles (82±10 nm x 16±2 nm) are made. Studies on nickel thickness, dewetting time and dewetting temperature are conducted. With these particle templates, graphitic carbon nanotubes are synthesised using catalytic hot-wire chemical vapour deposition (HWCVD), demonstrating the high-temperature processability of the nanoparticles. The second part of this thesis treats the non-catalytic HWCVD of tungsten oxides (WO3-x). Resistively heated tungsten filaments exposed to an air flow at subatmospheric pressures, produce tungsten oxide vapour species, which are collected on substrates and are subsequently characterised. First, a complete study on the process conditions is conducted, whereby the effects of filament radiation, filament temperature, process gas pressure and substrate temperature, are investigated. The thus controlled growth of nanogranular smooth amorphous and crystalline WO3-x thin films is presented for the first time. Partially crystalline smooth hydrous WO3-x thin films consisting of 20 nm grains can be deposited at very high rates. The synthesis of ultrafine powders with particle sizes of about 7 nm and very high specific surface areas of 121.7±0.4 m2·g-1 at ultrahigh deposition rates of 36 µm·min-1, is presented. Using substrate heating to 600°C or more, while using air pressures of 3·10-5 mbar to 0.1 mbar, leads to pronounced crystal structures, from nanowires, to

  4. Highly reproducible, efficient hysteresis-less CH3NH3PbI3-xClx planar hybrid solar cells without requiring heat-treatment

    NASA Astrophysics Data System (ADS)

    Heo, Jin Hyuck; Im, Sang Hyuk

    2016-01-01

    CH3NH3PbI3-xClx(MAPbI3-xClx) mixed halide perovskite powder with uniform composition was synthesized via simple solution chemistry, which demonstrates highly reproducible, efficient planar type MAPbI3-xClx mixed halide perovskite solar cells. Pure MAPbI3-xClx mixed halide perovskite powder was synthesized by reacting a 3 : 1 molar ratio of MAI : PbCl2 powder mixture in isopropanol (IPA) solution for 30 min at 60 °C with subsequent repeated centrifugation and washing in IPA. IPA functions as both the reaction medium for the formation of MAPbI3-xClx mixed halide and a selective remover of unreacted MAI and MACl byproducts. Accordingly, we could deposit a pinhole-free dense MAPbI3-xClx mixed halide perovskite film on a TiO2/FTO substrate through a simple one step spin-coating of pure MAPbI3-xClx mixed halide perovskite powder in DMF solution with HI additive, without further long heat-treatment processes. The deposited MAPbI3-xClx mixed halide perovskite film revealed uniform composition throughout the entire area, and the ratio of Cl to I + Cl and I + Cl to Pb was constant at ~0.03 and ~1/3, respectively. On the other hand, the conventional MAPbI3-xClx mixed halide perovskite film prepared by the long heat-treatment process had non-uniform composition because the ratio of Cl to I + Cl fluctuated greatly from 0 to 7.2. The average efficiency of planar type MAPbI3-xClx mixed halide perovskite solar cells was 18.65% +/- 0.30% and the champion cell had 1.11 V Voc, 22.1 mA cm-2Jsc, 77% F.F., and 18.9% η for forward scan conditions and 1.11 V Voc, 22.1 mA cm-2Jsc, 78% F.F., and 19.1% η for reverse scan conditions. Although the thickness of the MAPbI3-xClx mixed halide perovskite layer varied from ~500 nm to ~900 nm, the efficiency was within the range of 18.3%-19.0%.CH3NH3PbI3-xClx(MAPbI3-xClx) mixed halide perovskite powder with uniform composition was synthesized via simple solution chemistry, which demonstrates highly reproducible, efficient planar type MAPbI3-x

  5. A robust 45 nm gate-length CMOSFET for 90 nm Hi-speed technology

    NASA Astrophysics Data System (ADS)

    Lim, K. Y.; Chan, V.; Rengarajan, R.; Lee, H. K.; Rovedo, N.; Lim, E. H.; Yang, S.; Jamin, F.; Nguyen, P.; Lin, W.; Lai, C. W.; Teh, Y. W.; Lee, J.; Kim, L.; Luo, Z.; Ng, H.; Sudijono, J.; Wann, C.; Yang, I.

    2006-04-01

    We have developed a robust 45 nm gate-length CMOSFET for 90 nm node high performance application. Aggressive gate length and gate dielectric scaling along with optimized strain engineering enable high performance device similar to 65 nm node CMOSFET [Nakahara Y, et al. IEDM Tech Dig 2003;281] We have utilized oxy-nitride gate with post-nitridation anneal, high ramp rate spike anneal, low temperature spacer scheme and stress controlled SiN contact etch stop liner process in order to improve drive current as well as transistor short-channel roll-off. In particular, we will focus on the study of middle-of-line (MOL) process parameters, (i.e. MOL thermal expense and mechanical stress from contact etch stop liner) on transistor performance and reliability. Based on the study, we have obtained device exhibit drive-current of 900/485 μA/μm for NMOSFET and PMOSFET, respectively, at standard supply voltage of 1 V.

  6. The ATP-Dependent RNA Helicase DDX3X Modulates Herpes Simplex Virus 1 Gene Expression.

    PubMed

    Khadivjam, Bita; Stegen, Camille; Hogue-Racine, Marc-Aurèle; El Bilali, Nabil; Döhner, Katinka; Sodeik, Beate; Lippé, Roger

    2017-04-15

    The human protein DDX3X is a DEAD box ATP-dependent RNA helicase that regulates transcription, mRNA maturation, and mRNA export and translation. DDX3X concomitantly modulates the replication of several RNA viruses and promotes innate immunity. We previously showed that herpes simplex virus 1 (HSV-1), a human DNA virus, incorporates DDX3X into its mature particles and that DDX3X is required for optimal HSV-1 infectivity. Here, we show that viral gene expression, replication, and propagation depend on optimal DDX3X protein levels. Surprisingly, DDX3X from incoming viral particles was not required for the early stages of the HSV-1 infection, but, rather, the protein controlled the assembly of new viral particles. This was independent of the previously reported ability of DDX3X to stimulate interferon type I production. Instead, both the lack and overexpression of DDX3X disturbed viral gene transcription and thus subsequent genome replication. This suggests that in addition to its effect on RNA viruses, DDX3X impacts DNA viruses such as HSV-1 by an interferon-independent pathway.IMPORTANCE Viruses interact with a variety of cellular proteins to complete their life cycle. Among them is DDX3X, an RNA helicase that participates in most aspects of RNA biology, including transcription, splicing, nuclear export, and translation. Several RNA viruses and a limited number of DNA viruses are known to manipulate DDX3X for their own benefit. In contrast, DDX3X is also known to promote interferon production to limit viral propagation. Here, we show that DDX3X, which we previously identified in mature HSV-1 virions, stimulates HSV-1 gene expression and, consequently, virion assembly by a process that is independent of its ability to promote the interferon pathway.

  7. Cancer-associated DDX3X mutations drive stress granule assembly and impair global translation

    PubMed Central

    Valentin-Vega, Yasmine A.; Wang, Yong-Dong; Parker, Matthew; Patmore, Deanna M.; Kanagaraj, Anderson; Moore, Jennifer; Rusch, Michael; Finkelstein, David; Ellison, David W.; Gilbertson, Richard J.; Zhang, Jinghui; Kim, Hong Joo; Taylor, J. Paul

    2016-01-01

    DDX3X is a DEAD-box RNA helicase that has been implicated in multiple aspects of RNA metabolism including translation initiation and the assembly of stress granules (SGs). Recent genomic studies have reported recurrent DDX3X mutations in numerous tumors including medulloblastoma (MB), but the physiological impact of these mutations is poorly understood. Here we show that a consistent feature of MB-associated mutations is SG hyper-assembly and concomitant translation impairment. We used CLIP-seq to obtain a comprehensive assessment of DDX3X binding targets and ribosome profiling for high-resolution assessment of global translation. Surprisingly, mutant DDX3X expression caused broad inhibition of translation that impacted DDX3X targeted and non-targeted mRNAs alike. Assessment of translation efficiency with single-cell resolution revealed that SG hyper-assembly correlated precisely with impaired global translation. SG hyper-assembly and translation impairment driven by mutant DDX3X were rescued by a genetic approach that limited SG assembly and by deletion of the N-terminal low complexity domain within DDX3X. Thus, in addition to a primary defect at the level of translation initiation caused by DDX3X mutation, SG assembly itself contributes to global translation inhibition. This work provides mechanistic insights into the consequences of cancer-related DDX3X mutations, suggesting that globally reduced translation may provide a context-dependent survival advantage that must be considered as a possible contributor to tumorigenesis. PMID:27180681

  8. Eu(2+)-Activated Alkaline-Earth Halophosphates, M5(PO4)3X:Eu(2+) (M = Ca, Sr, Ba; X = F, Cl, Br) for NUV-LEDs: Site-Selective Crystal Field Effect.

    PubMed

    Kim, Donghyeon; Kim, Sung-Chul; Bae, Jong-Seong; Kim, Sungyun; Kim, Seung-Joo; Park, Jung-Chul

    2016-09-06

    Eu(2+)-activated M5(PO4)3X (M = Ca, Sr, Ba; X = F, Cl, Br) compounds providing different alkaline-earth metal and halide ions were successfully synthesized and characterized. The emission peak maxima of the M5(PO4)3Cl:Eu(2+) (M = Ca, Sr, Ba) compounds were blue-shifted from Ca to Ba (454 nm for Ca, 444 nm for Sr, and 434 nm for Ba), and those of the Sr5(PO4)3X:Eu(2+) (X = F, Cl, Br) compounds were red-shifted along the series of halides, F → Cl → Br (437 nm for F, 444 nm for Cl, and 448 nm for Br). The site selectivity and occupancy of the activator ions (Eu(2+)) in the M5(PO4)3X:Eu(2+) (M = Ca, Sr, Ba; X = F, Cl, Br) crystal lattices were estimated based on theoretical calculation of the 5d → 4f transition energies of Eu(2+) using LCAO. In combination with the photoluminescence measurements and theoretical calculation, it was elucidated that the Eu(2+) ions preferably enter the fully oxygen-coordinated sites in the M5(PO4)3X:Eu(2+) (M = Ca, Sr, Ba; X = F, Cl, Br) compounds. This trend can be well explained by "Pauling's rules". These compounds may provide a platform for modeling a new phosphor and application in the solid-state lighting field.

  9. Connecting node and method for constructing a connecting node

    NASA Technical Reports Server (NTRS)

    Johnson, Christopher J. (Inventor); Raboin, Jasen L. (Inventor); Spexarth, Gary R. (Inventor)

    2011-01-01

    A connecting node comprises a polyhedral structure comprising a plurality of panels joined together at its side edges to form a spherical approximation, wherein at least one of the plurality of panels comprises a faceted surface being constructed with a passage for integrating with one of a plurality of elements comprising a docking port, a hatch, and a window that is attached to the connecting node. A method for manufacturing a connecting node comprises the steps of providing a plurality of panels, connecting the plurality of panels to form a spherical approximation, wherein each edge of each panel of the plurality is joined to another edge of another panel, and constructing at least one of the plurality of panels to include a passage for integrating at least one of a plurality of elements that may be attached to the connecting node.

  10. Preparation of poly(acrylic)/SiO2/EuL3 x 2H2O, hybrid thin films from monodispersed colloidal silica.

    PubMed

    Chien, Wen-Chen; Yu, Yang-Yen; Chen, Shih-Yu; Yang, Chang-Chung

    2010-08-01

    In this study, poly(acrylic)/SiO2/EuL3 x 2H2O hybrid thin films were prepared from various acrylic monomers (MMA and EDMA/TMPTA), lanthanide metal complexes (EuL3 x 2H2O, L = pyridine carboxylic acid), and monodispersed colloidal silica with a coupling agent, 3-(trimethoxysilyl)propyl methacrylate (MSMA). It is a combination of the sol-gel reaction, thermal polymerization, and spin coating. The silica content in the hybrid thin films is fixed at 20 wt%, and the EuL3 x 2H2O content is varied from 0.01 g to 0.07 g. FTIR and EA analysis confirms the chemical structure of the prepared EuL3 x 2H2O and poly(acrylic)/SiO2/EuL3 x 2H2O hybrid thin films. UV-Vis spectra and n&k analysis shows that the hybrid thin film has good transparency in visible light. The refractive index of hybrid thin films can be effectively controlled through the EuL3 x 2H2O content. The PL spectra shows that the strongest emission peak occurs at 615 nm and the emission intensity increases to the peak maximum at an EuL3 x 2H2O content of 0.05 g. Both TGA and PL analysis show that the prepared hybrid thin films from the crosslinked acrylic polymer moiety have much better film uniformity, thermal stability, and fluorescence properties. The TEM diagram shows that the MSMA/SiO2/EuL3 x 2H2O particles with a size 15-20 nm are well dispersed in the reaction solution. The SEM diagram shows that the particle distribution in the prepared hybrid thin films is uniform and no phase separation is observed. Finally, AFM analysis indicates that the prepared hybrid thin films have an excellent surface planarity.

  11. Binary 193nm photomasks aging phenomenon study

    NASA Astrophysics Data System (ADS)

    Dufaye, Félix; Sartelli, Luca; Pogliani, Carlo; Gough, Stuart; Sundermann, Frank; Miyashita, Hiroyuki; Hidenori, Yoshioka; Charras, Nathalie; Brochard, Christophe; Thivolle, Nicolas

    2011-05-01

    193nm binary photomasks are still used in the semiconductor industry for the lithography of some critical layers for the nodes 90nm and 65nm, with high volumes and over long period. These 193nm binary masks seem to be well-known but recent studies have shown surprising degrading effects, like Electric Field induced chromium Migration (EFM) [1] or chromium migration [2] [3] . Phase shift Masks (PSM) or Opaque MoSi On Glass (OMOG) might not be concerned by these effects [4] [6] under certain conditions. In this paper, we will focus our study on two layers gate and metal lines. We will detail the effects of mask aging, with SEM top view pictures revealing a degraded chromium edge profile and TEM chemical analyses demonstrating the growth of a chromium oxide on the sidewall. SEMCD measurements after volume production indicated a modified CD with respect to initial CD data after manufacture. A regression analysis of these CD measurements shows a radial effect, a die effect and an isolated-dense effect. Mask cleaning effectiveness has also been investigated, with sulphate or ozone cleans, to recover the mask quality in terms of CD. In complement, wafer intrafield CD measurements have been performed on the most sensitive structure to monitor the evolution of the aging effect on mask CD uniformity. Mask CD drift have been correlated with exposure dose drift and isolated-dense bias CD drift on wafers. In the end, we will try to propose a physical explanation of this aging phenomenon and a solution to prevent from it occurring.

  12. Combustion Synthesis of Sm0.5Sr0.5CoO3-x and La0.6Sr0.4CoO3-x Nanopowders for Solid Oxide Fuel Cell Cathodes

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P.; Zhong, zhimin

    2005-01-01

    Nanopowders of Sm0.5Sr0.5CoO(3-x) (SSC) and La0.6Sr0.4CoO(3-x) (LSC) compositions, which are being investigated as cathode materials for intermediate temperature solid oxide fuel cells, were synthesized by a solution-combustion method using metal nitrates and glycine as fuel. Development of crystalline phases in the as-synthesized powders after heat treatments at various temperatures was monitored by x-ray diffraction. Perovskite phase in LSC formed more readily than in SSC. Single phase perovskites were obtained after heat treatment of the combustion synthesized LSC and SSC powders at 1000 and 1200 C, respectively. The as-synthesized powders had an average particle size of 12 nm as determined from x-ray line broadening analysis using the Scherrer equation. Average grain size of the powders increased with increase in calcination temperature. Morphological analysis of the powders calcined at various temperatures was done by scanning electron microscopy.

  13. Predicting Node Degree Centrality with the Node Prominence Profile

    PubMed Central

    Yang, Yang; Dong, Yuxiao; Chawla, Nitesh V.

    2014-01-01

    Centrality of a node measures its relative importance within a network. There are a number of applications of centrality, including inferring the influence or success of an individual in a social network, and the resulting social network dynamics. While we can compute the centrality of any node in a given network snapshot, a number of applications are also interested in knowing the potential importance of an individual in the future. However, current centrality is not necessarily an effective predictor of future centrality. While there are different measures of centrality, we focus on degree centrality in this paper. We develop a method that reconciles preferential attachment and triadic closure to capture a node's prominence profile. We show that the proposed node prominence profile method is an effective predictor of degree centrality. Notably, our analysis reveals that individuals in the early stage of evolution display a distinctive and robust signature in degree centrality trend, adequately predicted by their prominence profile. We evaluate our work across four real-world social networks. Our findings have important implications for the applications that require prediction of a node's future degree centrality, as well as the study of social network dynamics. PMID:25429797

  14. Brightly Luminescent and Color-Tunable Formamidinium Lead Halide Perovskite FAPbX3 (X = Cl, Br, I) Colloidal Nanocrystals.

    PubMed

    Levchuk, Ievgen; Osvet, Andres; Tang, Xiaofeng; Brandl, Marco; Perea, José Darío; Hoegl, Florian; Matt, Gebhard J; Hock, Rainer; Batentschuk, Miroslaw; Brabec, Christoph J

    2017-04-11

    In the past few years, hybrid organic-inorganic and all-inorganic metal halide perovskite nanocrystals have become one of the most interesting materials for optoelectronic applications. Here, we report a facile and rapid room temperature synthesis of 15-25 nm formamidinium CH(NH2)2PbX3 (X = Cl, Br, I, or mixed Cl/Br and Br/I) colloidal nanocrystals by ligand-assisted reprecipitation (LARP). The cubic and platelet-like nanocrystals with their emission in the range of 415-740 nm, full width at half-maximum (fwhm) of 20-44 nm, and radiative lifetimes of 5-166 ns enable band gap tuning by halide composition as well as by their thickness tailoring; they have a high photoluminescence quantum yield (up to 85%), colloidal and thermodynamic stability. Combined with surface modification that prevents degradation by water, this nanocrystalline material is an ideal candidate for optoelectronic devices and applications. In addition, optoelectronic measurements verify that the photodetector based on FAPbI3 nanocrystals paves the way for perovskite quantum dot photovoltaics.

  15. Monolayer assembly of ferrimagnetic Co(x)Fe(3-x)O4 nanocubes for magnetic recording.

    PubMed

    Wu, Liheng; Jubert, Pierre-Olivier; Berman, David; Imaino, Wayne; Nelson, Alshakim; Zhu, Huiyuan; Zhang, Sen; Sun, Shouheng

    2014-06-11

    We report a facile synthesis of monodisperse ferrimagnetic Co(x)Fe(3-x)O4 nanocubes (NCs) through thermal decomposition of Fe(acac)3 and Co(acac)2 (acac = acetylacetonate) in the presence of oleic acid and sodium oleate. The sizes of the NCs are tuned from 10 to 60 nm, and their composition is optimized at x = 0.6 to show strong ferrimagnetism with the 20 nm Co0.6Fe2.4O4 NCs showing a room temperature Hc of 1930 Oe. The ferrimagnetic NCs are self-assembled at the water-air interface into a large-area (in square centimeter) monolayer array with a high packing density and (100) texture. The 20 nm NC array can be recorded at linear densities ranging from 254 to 31 kfci (thousand flux changes per inch). The work demonstrates the great potential of solution-phase synthesis and self-assembly of magnetic array for magnetic recording applications.

  16. LCP nanoparticle for tumor and lymph node metastasis imaging

    NASA Astrophysics Data System (ADS)

    Tseng, Yu-Cheng

    A lipid/calcium/phosphate (LCP) nanoparticle formulation (particle diameter ˜25 nm) has previously been developed to delivery siRNA with superior efficiency. In this work, 111In was formulated into LCP nanoparticles to form 111In-LCP for SPECT/CT imaging. With necessary modifications and improvements of the LCP core-washing and surface-coating methods, 111In-LCP grafted with polyethylene glycol exhibited reduced uptake by the mononuclear phagocytic system. SPECT/CT imaging supported performed biodistribution studies, showing clear tumor images with accumulation of 8% or higher injected dose per gram tissue (ID/g) in subcutaneous, human-H460, lung-cancer xenograft and mouse-4T1, breast cancer metastasis models. Both the liver and the spleen accumulated ˜20% ID/g. Accumulation in the tumor was limited by the enhanced permeation and retention effect and was independent of the presence of a targeting ligand. A surprisingly high accumulation in the lymph nodes (˜70% ID/g) was observed. In the 4T1 lymph node metastasis model, the capability of intravenously injected 111In-LCP to visualize the size-enlarged and tumor-loaded sentinel lymph node was demonstrated. By analyzing the SPECT/CT images taken at different time points, the PK profiles of 111In-LCP in the blood and major organs were determined. The results indicated that the decrement of 111In-LCP blood concentration was not due to excretion, but to tissue penetration, leading to lymphatic accumulation. Larger LCP (diameter ˜65 nm) nanoparticles were also prepared for the purpose of comparison. Results indicated that larger LCP achieved slightly lower accumulation in the tumor and lymph nodes, but much higher accumulation in the liver and spleen; thus, larger nanoparticles might not be favorable for imaging purposes. We also demonstrated that LCP with a diameter of ˜25 nm were better able to penetrate into tissues, travel in the lymphatic system and preferentially accumulate in the lymph nodes due to 1) small

  17. Anatomy and histology of Virchow's node.

    PubMed

    Mizutani, Masaomi; Nawata, Shin-ichi; Hirai, Ichiro; Murakami, Gen; Kimura, Wataru

    2005-12-01

    A regional lymphatic system is composed of the first, second, third and even fourth or much more intercalated nodes along the lymptatic route from the periphery to the venous angle or the thoracic duct. The third or fourth node is usually termed the last-intercalated node or end node along the route. Similarly, one of the supraclavicular nodes is known to correspond to the end node along the thoracic duct. It is generally called 'Virchow's node', in which the famous 'Virchow's metastasis' of advanced gastric cancer occurs. The histology of this node has not been investigated, although region-specific differences in histology are evident in human lymph nodes. We found macroscopically the end node in five of 30 donated cadavers. Serial sections were prepared for these five nodes and sections stained with hematoxylin and eosin. Histological investigation revealed that, on the inferior or distal side of the end node, the thoracic duct divided into three to 10 collateral ducts and these ducts surrounded the node. The node communicated with the thoracic duct and its collaterals at multiple sites in two to three hilus-like portions, as well as along the subcapsular sinus. Thus, the end node was aligned parallel to the thoracic duct. Moreover, the superficial and deep cortex areas of the end node were fragmented to make an island-like arrangement, which may cause the short-cut intranodal shunt. Consequenly, the filtration function of most of Virchow's node seemed to be quite limited.

  18. Comparison of three magnetic nanoparticle tracers for sentinel lymph node biopsy in an in vivo porcine model

    PubMed Central

    Pouw, Joost J; Ahmed, Muneer; Anninga, Bauke; Schuurman, Kimberley; Pinder, Sarah E; Van Hemelrijck, Mieke; Pankhurst, Quentin A; Douek, Michael; ten Haken, Bennie

    2015-01-01

    Introduction Breast cancer staging with sentinel lymph node biopsy relies on the use of radioisotopes, which limits the availability of the procedure worldwide. The use of a magnetic nanoparticle tracer and a handheld magnetometer provides a radiation-free alternative, which was recently evaluated in two clinical trials. The hydrodynamic particle size of the used magnetic tracer differs substantially from the radioisotope tracer and could therefore benefit from optimization. The aim of this study was to assess the performance of three different-sized magnetic nanoparticle tracers for sentinel lymph node biopsy within an in vivo porcine model. Materials and methods Sentinel lymph node biopsy was performed within a validated porcine model using three magnetic nanoparticle tracers, approved for use in humans (ferumoxytol, with hydrodynamic diameter dH =32 nm; Sienna+®, dH =59 nm; and ferumoxide, dH =111 nm), and a handheld magnetometer. Magnetometer counts (transcutaneous and ex vivo), iron quantification (vibrating sample magnetometry), and histopathological assessments were performed on all ex vivo nodes. Results Transcutaneous “hotspots” were present in 12/12 cases within 30 minutes of injection for the 59 nm tracer, compared to 7/12 for the 32 nm tracer and 8/12 for the 111 nm tracer, at the same time point. Ex vivo magnetometer counts were significantly greater for the 59 nm tracer than for the other tracers. Significantly more nodes per basin were excised for the 32 nm tracer compared to other tracers, indicating poor retention of the 32 nm tracer. Using the 59 nm tracer resulted in a significantly higher iron accumulation compared to the 32 nm tracer. Conclusion The 59 nm tracer demonstrated rapid lymphatic uptake, retention in the first nodes reached, and accumulation in high concentration, making it the most suitable tracer for intraoperative sentinel lymph node localization. PMID:25709445

  19. Fluorescence and DNA-binding spectral studies of neodymium(III) complex containing 2,2'-bipyridine, [Nd(bpy)2Cl(3)xOH2].

    PubMed

    Khorasani-Motlagh, Mozhgan; Noroozifar, Meissam; Mirkazehi-Rigi, Sohaila

    2010-02-01

    The interaction of [Nd(bpy)(2)Cl(3)xOH(2)], where bipy is 2,2'-bipyridine, with DNA has been studied by absorption, emission, and viscosity measurements. [Nd(bpy)(2)Cl(3)xOH(2)] showed absorption decreasing in charge transfer band with increasing of DNA. The binding constant, K(b) has been determined by absorption measurement and found to be (1.5+/-0.1)x10(5)M(-1). The fluorescent of [Nd(bpy)(2)Cl(3)xOH(2)] has been investigated in detail. The interaction was also studied by fluorescence quenching technique. The results of fluorescence titration revealed that DNA had the strong ability to quenching the intrinsic fluorescence of Nd(III) complex at 327 nm. The binding site number n, apparent binding constant K(b) and the Stern-Volmer quenching constant K(SV) have been determined. Thermodynamic parameters have been calculated according to relevant fluorescent data and Van't Hoff equation. Characterization of bonding mode has been studied. The results suggested that the major interaction mode between [Nd(bpy)(2)Cl(3)xOH(2)] and DNA was groove binding.

  20. Luminescence properties of a novel promising red phosphor Na3Gd2-x(BO3)3:xEu3+

    NASA Astrophysics Data System (ADS)

    Wei, Tengyue; Ren, Qiang; Wu, Xiulan; Shi, Xiaolei; Wang, Baoxing; Huo, Zhezhe

    2016-11-01

    The novel red-emitting Na3Gd2-x(BO3)3:xEu3+ phosphors were synthesized by a solid-state method. Under near ultraviolet excitation, the phosphors exhibit dominant emission peak at 614 nm and generate bright red light, which is attributed to the electric-dipole transition 5D0→7F2. The optimal doping amount of Eu3+ in Na3Gd2-x(BO3)3:xEu3+ phosphors is x=0.3 for the maximum emission. The exchange interaction between Eu3+ ions is identified to be the main mechanism in the concentration quenching process. The CIE color coordinates of the Na3Gd2-x(BO3)3:xEu3+ phosphors (x=0.650, y=0.350) are close to the NTSC standard values of red. With a relatively high quantum efficiency of 35.2%, Na3Gd2-x(BO3)3:xEu3+ red-emitting phosphor is probably a promising candidate for near ultraviolet-based white LEDs application.

  1. Hepatitis C virus 3'X region interacts with human ribosomal proteins.

    PubMed

    Wood, J; Frederickson, R M; Fields, S; Patel, A H

    2001-02-01

    To identify proteins that can bind the 3' untranslated region (UTR) of hepatitis C virus (HCV) we screened human cDNA libraries using the Saccharomyces cerevisiae three-hybrid system. Screening with an RNA sequence derived from the 3'-terminal 98 nucleotides (3'X region) of an infectious clone of HCV (H77c) yielded clones of human ribosomal proteins L22, L3, S3, and mL3, a mitochondrial homologue of L3. We performed preliminary characterization of the binding between the 3'X region and these proteins by a three-hybrid mating assay using mutant 3'X sequences. We have further characterized the interaction between 3'X and L22, since this protein is known to be associated with two small Epstein-Barr virus (EBV)-encoded RNA species (EBERs) which are abundantly produced in cells latently infected with EBV. The EBERs, which have similar predicted secondary structure to the HCV 3'X, assemble into ribonucleoprotein particles that include L22 and La protein. To confirm that L22 binds HCV 3'X we performed in vitro binding assays using recombinant L22 (expressed as a glutathione S-transferase [GST] fusion protein) together with a 3'X riboprobe. The 3'X region binds to the GST-L22 fusion protein (but not to GST alone), and this interaction is subject to competition with unlabeled 3'X RNA. To establish the functional role played by L22 in internal ribosome entry site (IRES)-mediated translation of HCV sequences we performed translational analysis in HuH-7 cells using monocistronic and bicistronic reporter constructs. The relative amount of core-chloramphenicol acetyltransferase reporter protein translated under the control of the HCV IRES was stimulated in the presence of L22 and La when these proteins were supplied in trans.

  2. Luminescence behavior of Li2 Sr1-3x/2 Eux SiO4 red phosphors for LED applications.

    PubMed

    Sun, Xin-Yuan; Lin, Liang-Wu; Liu, Guang-Yao; Liu, Xin-Gen; Wu, Ai-Jin; Huang, Shi-Ming

    2014-03-01

    Red-emitting Li(2)Sr(1-3x/2)Eux SiO4 0 ≤ x ≤ 0.5) phosphors were synthesized at 900 °C in air by a solid-state reaction. The synthesized phosphors were characterized by X-ray powder diffraction, photoluminescence (PL) excitation (PLE) and PL spectra. The results from the PLE spectra suggest that the strong 394 nm excitation peak associated with the (5) L6 state of Eu(3+) ions is of significance for near ultraviolet pumped white light-emitting diodes and solid-state lighting. It is also noted that the position of the charge transfer state of Eu(3+) ions shifts towards the higher energy side (blue shift) by increasing the content of Eu(3+) ions. The predominant emissions of Eu(3+) ions under 394 nm excitation are observed at 580, 593, 614, 656 and 708 nm, which are attributed to the (5) D0 → (7)FJ (J = 0, 1, 2, 3 and 4), respectively. The PL results reveal that the optimal content of the red-emitting Li2 Sr(1-3x/2)Eux SiO4 phosphors is x = 0.475. Simulation of the white light excited by 394 nm near ultraviolet light has also been carried out for its potential white light-emitting diode applications.

  3. Faster qualification of 193-nm resists for 100-nm development using photo cell monitoring

    NASA Astrophysics Data System (ADS)

    Jones, Chris M.; Kallingal, Chidam; Zawadzki, Mary T.; Jeewakhan, Nazneen N.; Kaviani, Nazila N.; Krishnan, Prakash; Klaum, Arthur D.; Van Ess, Joel

    2003-05-01

    The development of 100-nm design rule technologies is currently taking place in many R&D facilities across the world. For some critical alyers, the transition to 193-nm resist technology has been required to meet this leading edge design rule. As with previous technology node transitions, the materials and processes available are undergoing changes and improvements as vendors encounter and solve problems. The initial implementation of the 193-nm resits process did not meet the photolithography requirements of some IC manufacturers due to very high Post Exposure Bake temperature sensitivity and consequently high wafer to wafer CD variation. The photoresist vendors have been working to improve the performance of the 193-nm resists to meet their customer's requirements. Characterization of these new resists needs to be carried out prior to implementation in the R&D line. Initial results on the second-generation resists evaluated at Cypress Semicondcutor showed better CD control compared to the aelrier resist with comparable Depth of Focus (DOF), Exposure Latitute, Etch Resistance, etc. In addition to the standard lithography parameters, resist characterization needs to include defect density studies. It was found that the new resists process with the best CD control, resulted in the introduction of orders of magnitude higher yield limiting defects at Gate, Contact adn Local Interconnect. The defect data were shared with the resists vendor and within days of the discovery the resist vendor was able to pinpoint the source of the problem. The fix was confirmed and the new resists were successfully released to production. By including defect monitoring into the resist qualification process, Cypress Semiconductor was able to 1) drive correction actions earlier resulting in faster ramp and 2) eliminate potential yield loss. We will discuss in this paper how to apply the Micro Photo Cell Monitoring methodology for defect monitoring in the photolithogprhay module and the

  4. Scalable processes for fabricating non-volatile memory devices using self-assembled 2D arrays of gold nanoparticles as charge storage nodes.

    PubMed

    Muralidharan, Girish; Bhat, Navakanta; Santhanam, Venugopal

    2011-11-01

    We propose robust and scalable processes for the fabrication of floating gate devices using ordered arrays of 7 nm size gold nanoparticles as charge storage nodes. The proposed strategy can be readily adapted for fabricating next generation (sub-20 nm node) non-volatile memory devices.

  5. W3X: A Cost-Effective Post-CCSD(T) Composite Procedure.

    PubMed

    Chan, Bun; Radom, Leo

    2013-11-12

    We have formulated the W3X procedure by incorporating cost-effective post-CCSD(T) components (up to the CCSDT(Q) level) into the W1X-1 protocol, the latter representing a recently reported economical yet accurate approximation to CCSD(T)/CBS. For medium-sized systems, W3X is moderately more computationally demanding than W1X-1, but it is significantly less costly than the W3.2lite and (especially) W3.2 procedures. Because of the use of the cost-effective W1X-1 method as the underlying CCSD(T) component, W3X is also less expensive than the W2.2 protocol, which does not incorporate post-CCSD(T) excitations. We find that, for single-reference systems (the G2/97 set and most of the W4-11 set), W3X is comparable in accuracy to the underlying W1X-1 protocol, as might have been expected. For the more challenging cases of the multireference systems within the W4-11 set, the dissociation of F2 and the automerization of cyclobutadiene, W3X provides improved performance compared with the CCSD(T)-based procedures (W1X-1 and W2.2). Highly multireference chromium oxides CrO, CrO2, and CrO3 are still somewhat challenging for W3X (and even for the higher-level W3.2lite and W3.2 procedures), but the inclusion of the economical post-CCSD(T) terms in W3X already leads to a significant improvement over W1X-1. Thus, W3X provides a cost-effective means for treating systems with significant (but perhaps not excessive) multireference character that are otherwise not well-described by CCSD(T)-based methods.

  6. EUV reticle inspection with a 193nm reticle inspector

    NASA Astrophysics Data System (ADS)

    Broadbent, William; Inderhees, Gregg; Yamamoto, Tetsuya; Lee, Isaac; Lim, Phillip

    2013-06-01

    The prevailing industry opinion is that EUV Lithography (EUVL) will enter High Volume Manufacturing (HVM) in the 2015 - 2017 timeframe at the 16nm HP node. Every year the industry assesses the key risk factors for introducing EUVL into HVM - blank and reticle defects are among the top items. To reduce EUV blank and reticle defect levels, high sensitivity inspection is needed. To address this EUV inspection need, KLA-Tencor first developed EUV blank inspection and EUV reticle inspection capability for their 193nm wavelength reticle inspection system - the Teron 610 Series (2010). This system has become the industry standard for 22nm / 3xhp optical reticle HVM along with 14nm / 2xhp optical pilot production; it is further widely used for EUV blank and reticle inspection in R and D. To prepare for the upcoming 10nm / 1xhp generation, KLA-Tencor has developed the Teron 630 Series reticle inspection system which includes many technical advances; these advances can be applied to both EUV and optical reticles. The advanced capabilities are described in this paper with application to EUV die-to-database and die-to-die inspection for currently available 14nm / 2xhp generation EUV reticles. As 10nm / 1xhp generation optical and EUV reticles become available later in 2013, the system will be tested to identify areas for further improvement with the goal to be ready for pilot lines in early 2015.

  7. A novel double patterning approach for 30nm dense holes

    NASA Astrophysics Data System (ADS)

    Hsu, Dennis Shu-Hao; Wang, Walter; Hsieh, Wei-Hsien; Huang, Chun-Yen; Wu, Wen-Bin; Shih, Chiang-Lin; Shih, Steven

    2011-04-01

    Double Patterning Technology (DPT) was commonly accepted as the major workhorse beyond water immersion lithography for sub-38nm half-pitch line patterning before the EUV production. For dense hole patterning, classical DPT employs self-aligned spacer deposition and uses the intersection of horizontal and vertical lines to define the desired hole patterns. However, the increase in manufacturing cost and process complexity is tremendous. Several innovative approaches have been proposed and experimented to address the manufacturing and technical challenges. A novel process of double patterned pillars combined image reverse will be proposed for the realization of low cost dense holes in 30nm node DRAM. The nature of pillar formation lithography provides much better optical contrast compared to the counterpart hole patterning with similar CD requirements. By the utilization of a reliable freezing process, double patterned pillars can be readily implemented. A novel image reverse process at the last stage defines the hole patterns with high fidelity. In this paper, several freezing processes for the construction of the double patterned pillars were tested and compared, and 30nm double patterning pillars were demonstrated successfully. A variety of different image reverse processes will be investigated and discussed for their pros and cons. An economic approach with the optimized lithography performance will be proposed for the application of 30nm DRAM node.

  8. Optimum ArFi laser bandwidth for 10nm node logic imaging performance

    NASA Astrophysics Data System (ADS)

    Alagna, Paolo; Zurita, Omar; Timoshkov, Vadim; Wong, Patrick; Rechtsteiner, Gregory; Baselmans, Jan; Mailfert, Julien

    2015-03-01

    Lithography process window (PW) and CD uniformity (CDU) requirements are being challenged with scaling across all device types. Aggressive PW and yield specifications put tight requirements on scanner performance, especially on focus budgets resulting in complicated systems for focus control. In this study, an imec N10 Logic-type test vehicle was used to investigate the E95 bandwidth impact on six different Metal 1 Logic features. The imaging metrics that track the impact of light source E95 bandwidth on performance of hot spots are: process window (PW), line width roughness (LWR), and local critical dimension uniformity (LCDU). In the first section of this study, the impact of increasing E95 bandwidth was investigated to observe the lithographic process control response of the specified logic features. In the second section, a preliminary assessment of the impact of lower E95 bandwidth was performed. The impact of lower E95 bandwidth on local intensity variability was monitored through the CDU of line end features and the LWR power spectral density (PSD) of line/space patterns. The investigation found that the imec N10 test vehicle (with OPC optimized for standard E95 bandwidth of300fm) features exposed at 200fm showed pattern specific responses, suggesting areas of potential interest for further investigation.

  9. Reticulin and NM23 staining in the interpretation of lymph nodal nevus rests.

    PubMed

    Kanner, William A; Barry, Catherine I; Smart, Chandra N; Frishberg, David P; Binder, Scott W; Wick, Mark R

    2013-06-01

    Melanocytic nevus rests in lymph nodes are a known diagnostic challenge, especially in patients with a history of melanoma. Reticulin and NM23 have been studied in this context. The pattern of reticulin staining in melanomas surrounds groups/nests of melanocytes but individual cells in benign nevi. NM23, a metastasis-suppressor gene, has an association with metastatic potential in melanomas and some carcinomas. Twenty-eight cases (14 cases of metastatic melanoma to lymph nodes and 14 cases of lymph node nevus rests, all confirmed with Melan-A staining) were stained with reticulin and NM23. The pattern of reticulin staining was reported as surrounding groups if staining was noted in approximately 5-10 melanocytes in greater than 50% of the lesion but was otherwise reported as surrounding individual melanocytes. Cytoplasmic staining was considered to represent reactivity for NM23. Reticulin staining around groups of melanocytes was identified in all 14 cases of metastatic melanoma. Regarding nodal nevus rest cases, 12 of 14 cases (86%) demonstrated staining around individual melanocytes, whereas in 2 cases, reticulin surrounded melanocytic groups. NM23 staining was equivocal in all cases. Reticulin staining reliably invests groups of melanocytes in cases of metastatic melanoma, whereas in nodal nevus rests, it predominantly surrounds individual melanocytes. NM23 demonstrated no discriminatory value in this analysis. In cases in which a collection of melanocytes is present within a lymph node, reticulin deposition around individual melanocytes supports a diagnosis of lymph nodal nevus rest.

  10. 32 nm imprint masks using variable shape beam pattern generators

    NASA Astrophysics Data System (ADS)

    Selinidis, Kosta; Thompson, Ecron; Schmid, Gerard; Stacey, Nick; Perez, Joseph; Maltabes, John; Resnick, Douglas J.; Yeo, Jeongho; Kim, Hoyeon; Eynon, Ben

    2008-05-01

    Imprint lithography has been included on the ITRS Lithography Roadmap at the 32, 22 and 16 nm nodes. Step and Flash Imprint Lithography (S-FIL ®) is a unique method that has been designed from the beginning to enable precise overlay for creating multilevel devices. A photocurable low viscosity monomer is dispensed dropwise to meet the pattern density requirements of the device, thus enabling imprint patterning with a uniform residual layer across a field and across entire wafers. Further, S-FIL provides sub-100 nm feature resolution without the significant expense of multi-element, high quality projection optics or advanced illumination sources. However, since the technology is 1X, it is critical to address the infrastructure associated with the fabrication of templates. For sub-32 nm device manufacturing, one of the major technical challenges remains the fabrication of full-field 1x templates with commercially viable write times. Recent progress in the writing of sub-40 nm patterns using commercial variable shape e-beam tools and non-chemically amplified resists has demonstrated a very promising route to realizing these objectives, and in doing so, has considerably strengthened imprint lithography as a competitive manufacturing technology for the sub 32nm node. Here we report the first imprinting results from sub-40 nm full-field patterns, using Samsung's current flash memory production device design. The fabrication of the template is discussed and the resulting critical dimension control and uniformity are discussed, along with image placement results. The imprinting results are described in terms of CD uniformity, etch results, and overlay.

  11. Full-field imprinting of sub-40 nm patterns

    NASA Astrophysics Data System (ADS)

    Yeo, Jeongho; Kim, Hoyeon; Eynon, Ben

    2008-03-01

    Imprint lithography has been included on the ITRS Lithography Roadmap at the 32, 22 and 16 nm nodes. Step and Flash Imprint Lithography (S-FIL (R)) is a unique patterning method that has been designed from the beginning to enable precise overlay to enable multilevel device fabrication. A photocurable low viscosity resist is dispensed dropwise to match the pattern density requirements of the device, thus enabling patterning with a uniform residual layer thickness across a field and across multiple wafers. Further, S-FIL provides sub-50 nm feature resolution without the significant expense of multi-element projection optics or advanced illumination sources. However, since the technology is 1X, it is critical to address the infrastructure associated with the fabrication of imprint masks (templates). For sub-32 nm device manufacturing, one of the major technical challenges remains the fabrication of full-field 1x imprint masks with commercially viable write times. Recent progress in the writing of sub-40 nm patterns using commercial variable shape e-beam tools and non-chemically amplified resists has demonstrated a very promising route to realizing these objectives, and in doing so, has considerably strengthened imprint lithography as a competitive manufacturing technology for the sub-32nm node. Here we report the first imprinting results from sub-40 nm full-field patterns, using Samsung's current flash memory production device design. The fabrication of the imprint mask and the resulting critical dimension control and uniformity are discussed, along with image placement results. The imprinting results are described in terms of CD uniformity, etch results, and overlay.

  12. Identifying node importance in complex networks

    NASA Astrophysics Data System (ADS)

    Hu, Ping; Fan, Wenli; Mei, Shengwei

    2015-07-01

    In this paper, we propose a novel node importance evaluation method from the perspective of the existence of mutual dependence among nodes. The node importance comprises its initial importance and the importance contributions from both the adjacent and non-adjacent nodes according to the dependence strength between them. From the simulation analyses on an example network and the ARPA network, we observe that our method can well identify the node importance. Then, the cascading failures on the Netscience and E-mail networks demonstrate that the networks are more vulnerable when continuously removing the important nodes identified by our method, which further proves the accuracy of our method.

  13. Controlling data transfers from an origin compute node to a target compute node

    DOEpatents

    Archer, Charles J.; Blocksome, Michael A.; Ratterman, Joseph D.; Smith, Brian E.

    2011-06-21

    Methods, apparatus, and products are disclosed for controlling data transfers from an origin compute node to a target compute node that include: receiving, by an application messaging module on the target compute node, an indication of a data transfer from an origin compute node to the target compute node; and administering, by the application messaging module on the target compute node, the data transfer using one or more messaging primitives of a system messaging module in dependence upon the indication.

  14. MoO3-x quantum dots for photoacoustic imaging guided photothermal/photodynamic cancer treatment.

    PubMed

    Ding, Dandan; Guo, Wei; Guo, Chongshen; Sun, Jianzhe; Zheng, Nannan; Wang, Fei; Yan, Mei; Liu, Shaoqin

    2017-02-02

    A theranostic system of image-guided phototherapy is considered as a potential technique for cancer treatment because of the ability to integrate diagnostics and therapies together, thus enhancing accuracy and visualization during the treatment. In this work, we realized photoacoustic (PA) imaging-guided photothermal (PT)/photodynamic (PD) combined cancer treatment just via a single material, MoO3-x quantum dots (QDs). Due to their strong NIR harvesting ability, MoO3-x QDs can convert incident light into hyperthermia and sensitize the formation of singlet oxygen synchronously as evidenced by in vitro assay, hence, they can behave as both PT and PD agents effectively and act as a "dual-punch" to cancer cells. In a further study, elimination of solid tumors from HeLa-tumor bearing mice could be achieved in a MoO3-x QD mediated phototherapeutic group without obvious lesions to the major organs. In addition, the desired PT effect also makes MoO3-x QDs an exogenous PA contrast agent for in vivo live-imaging to depict tumors. Compared with previously reported theranostic systems that put several components into one system, our multifunctional agent of MoO3-x QDs is exempt from unpredictable mutual interference between components and ease of leakage of virtual components from the composited system.

  15. Underwater Sensor Nodes and Networks

    PubMed Central

    Lloret, Jaime

    2013-01-01

    Sensor technology has matured enough to be used in any type of environment. The appearance of new physical sensors has increased the range of environmental parameters for gathering data. Because of the huge amount of unexploited resources in the ocean environment, there is a need of new research in the field of sensors and sensor networks. This special issue is focused on collecting recent advances on underwater sensors and underwater sensor networks in order to measure, monitor, surveillance of and control of underwater environments. On the one hand, from the sensor node perspective, we will see works related with the deployment of physical sensors, development of sensor nodes and transceivers for sensor nodes, sensor measurement analysis and several issues such as layer 1 and 2 protocols for underwater communication and sensor localization and positioning systems. On the other hand, from the sensor network perspective, we will see several architectures and protocols for underwater environments and analysis concerning sensor network measurements. Both sides will provide us a complete view of last scientific advances in this research field. PMID:24013489

  16. Histopathology of the Lymph Nodes

    PubMed Central

    Elmore, Susan A.

    2007-01-01

    Lymph nodes function as filters of tissues and tissue fluids and are sites of origin and production of lymphocytes for normal physiological functions. As part of this normal function, they react to both endogenous and exogenous substances with a variety of specific morphological and functional responses. Lesions can be both proliferative and nonproliferative, and can be treatment-related or not. The histological evaluation of lymph nodes is necessary in order to understand the immunotoxic effects of chemicals with the resulting data providing an important component of human risk assessment. It is the challenge of the toxicologic pathologist to interpret the pathology data within the complete clinical evaluation of the entire animal. Daily insults, ageing and toxins can alter the normal histology and primary function of lymph nodes. Therefore it is important to distinguish and differentiate lesions that occur naturally during normal development and ageing from those that are induced by xenobiotics. To achieve this goal, comparison with strain- age- and sex-matched controls is crucial. PMID:17067938

  17. Ligand-assisted thickness tailoring of highly luminescent colloidal CH3NH3PbX3 (X = Br and I) perovskite nanoplatelets.

    PubMed

    Levchuk, Ievgen; Herre, Patrick; Brandl, Marco; Osvet, Andres; Hock, Rainer; Peukert, Wolfgang; Schweizer, Peter; Spiecker, Erdmann; Batentschuk, Miroslaw; Brabec, Christoph J

    2016-12-20

    Quantum size-confined CH3NH3PbX3 (X = Br and I) perovskite nanoplatelets with remarkably high photoluminescence quantum yield (up to 90%) were synthesized by ligand-assisted re-precipitation. Thickness-tunability was realized by varying the oleylamine and oleic acid ligand ratio. This method allows tailoring the nanoplatelet thickness by adjusting the number of unit cell monolayers. Broadly tunable emission wavelengths (450-730 nm) are achieved via the pronounced quantum size effect without anion-halide mixing.

  18. Process variation aware OPC modeling for leading edge technology nodes

    NASA Astrophysics Data System (ADS)

    Zhang, Qiaolin; Croffie, Ebo; Fan, Yongfa; Li, Jianliang; Lucas, Kevin; Falch, Brad; Melvin, Lawerence

    2009-03-01

    As the semiconductor industry moves to the 45nm node and beyond, the tolerable lithography process window significantly shrinks due to the combined use of high NA and low k1 factor. This is exacerbated by the fact that the usable depth of focus at 45nm node for critical layer is 200nm or less. Traditional Optical Proximity Correction (OPC) only computes the optimal pattern layout to optimize its lithography patterning at nominal process condition (nominal defocus and nominal exposure dose) according to an OPC model calibrated at this nominal condition, and this may put the post-OPC layout at non-negligible patterning failure risk due to the inevitable process variation (mainly defocus and dose variations). With a little sacrifice at the nominal condition, process variation aware OPC can greatly enhance the robustness of post-OPC layout patterning in the presence of defocus and dose variation. There is also an increasing demand for through process window lithography verification for post-OPC circuit layout. The corner stone for successful process variation aware OPC and lithography verification is an accurately calibrated continuous process window model which is a continuous function of defocus and dose. This calibrated model needs to be able to interpolate and extrapolate in the usable process window. Based on Synopsys' OPC modeling software package-ProGen and ProGenPlus, we developed an automated process window (PW) modeling module, which can build process variation aware process window OPC model with continuously adjustable process parameters: defocus and dose. The calibration of this continuous PW model was performed in a single calibration process using silicon measurement at nominal condition and off-focus-off-dose conditions. Through the example of several process window models for layers at 45nm technology nodes, we demonstrated that this novel continuous PW modeling approach can achieve very good performance both at nominal condition and at interpolated or

  19. Axillary Lymph Nodes and Breast Cancer

    MedlinePlus

    ... more likely to affect arm function and cause lymphedema. For this reason, sentinel node biopsy is the ... OR supraclavicular (above the clavicle) nodes have cancer Lymphedema Lymphedema [lim-fa-DEE-ma] is a build- ...

  20. Flow Simulation of N3-X Hybrid Wing-Body Configuration

    NASA Technical Reports Server (NTRS)

    Kim, Hyoungjin; Liou, Meng-Sing

    2013-01-01

    System studies show that a N3-X hybrid wing-body aircraft with a turboelectric distributed propulsion system using a mail-slot inlet/nozzle nacelle can meet the environmental and performance goals for N+3 generation transports (three generations beyond the current air transport technology level) set by NASA s Subsonic Fixed Wing Project. In this study, a Navier-Stokes flow simulation of N3-X on hybrid unstructured meshes was conducted, including the mail-slot propulsor. The geometry of the mail-slot propulsor was generated by a CAD (Computer-Aided Design)-free shape parameterization. A body force approach was used for a more realistic and efficient simulation of the turning and loss effects of the fan blades and the inlet-fan interactions. Flow simulation results of the N3-X demonstrates the validity of the present approach.

  1. A Noise and Emissions Assessment of the N3-X Transport

    NASA Technical Reports Server (NTRS)

    Berton, Jeffrey J.; Haller, William J.

    2014-01-01

    Analytical predictions of certification noise and exhaust emissions for NASA's N3-X - a notional, hybrid wingbody airplane - are presented in this paper. The N3-X is a 300-passenger concept transport propelled by an array of fans distributed spanwise near the trailing edge of the wingbody. These fans are driven by electric motors deriving power from twin generators driven by turboshaft engines. Turboelectric distributed hybrid propulsion has the potential to dramatically increase the propulsive efficiency of aircraft. The noise and exhaust emission estimates presented here are generated using NASA's conceptual design systems analysis tools with several key modifications to accommodate this unconventional architecture. These tools predict certification noise and the emissions of oxides of nitrogen by leveraging data generated from a recent analysis of the N3-X propulsion system.

  2. The analysis of polarization characteristics on 40nm memory devices

    NASA Astrophysics Data System (ADS)

    Yoo, Minae; Park, Chanha; You, Taejun; Yang, Hyunjo; Min, Young-Hong; Park, Ki-Yeop; Yim, Donggyu; Park, Sungki

    2009-03-01

    Hyper NA system has been introduced to develop sub-60nm node memory devices. Especially memory industries including DRAM and NAND Flash business have driven much finer technology to improve productivity. Polarization at hyper NA has been well known as important optical technology to enhance imaging performance and also achieve very low k1 process. The source polarization on dense structure has been used as one of the major RET techniques. The process capabilities of various layers under specific illumination and polarization have been explored. In this study, polarization characteristic on 40nm memory device will be analyzed. Especially, TE (Transverse Electric) polarization and linear X-Y polarization on hyper NA ArF system will be compared and investigated. First, IPS (Intensity in Preferred State) value will be measured with PMM (Polarization Metrology Module) to confirm polarization characteristic of each machine before simulation. Next simulation will be done to estimate the CD variation impact of each polarization to different illumination. Third, various line and space pattern of DRAM and Flash device will be analyzed under different polarized condition to see the effect of polarization on CD of actual wafer. Finally, conclusion will be made for this experiment and future work will be discussed. In this paper, the behavior of 40nm node memory devices with two types of polarization is presented and the guidelines for polarization control is discussed based on the patterning performances.

  3. Physical exercise protects against Alzheimer's disease in 3xTg-AD mice.

    PubMed

    García-Mesa, Yoelvis; López-Ramos, Juan Carlos; Giménez-Llort, Lydia; Revilla, Susana; Guerra, Rafael; Gruart, Agnès; Laferla, Frank M; Cristòfol, Rosa; Delgado-García, José M; Sanfeliu, Coral

    2011-01-01

    Physical exercise is considered to exert a positive neurophysiological effect that helps to maintain normal brain activity in the elderly. Expectations that it could help to fight Alzheimer's disease (AD) were recently raised. This study analyzed the effects of different patterns of physical exercise on the 3xTg-AD mouse. Male and female 3xTg-AD mice at an early pathological stage (4-month-old) have had free access to a running wheel for 1 month, whereas mice at a moderate pathological stage(7-month-old) have had access either during 1 or 6 months. The non-transgenic mouse strain was used as a control. Parallel animal groups were housed in conventional conditions. Cognitive loss and behavioral and psychological symptoms of dementia (BPSD)-like behaviors were present in the 3xTg-AD mice along with alteration in synaptic function and ong-term potentiation impairment in vivo. Brain tissue showed AD-pathology and oxidative-related changes. Disturbances were more severe at the older age tested. Oxidative stress was higher in males but other changes were similar or higher in females. Exercise treatment ameliorated cognitive deterioration and BPSD-like behaviors such as anxiety and the startle response. Synaptic changes were partially protected by exercise. Oxidative stress was reduced. The best neuroprotection was generally obtained after 6 months of exercise in 7-month-old 3xTg-AD mice. Improved sensorimotor function and brain tissue antioxidant defence were induced in both 3xTg-AD and NonTg mice. Therefore, the benefits of aerobic physical exercise on synapse, redox homeostasis, and general brain function demonstrated in the 3xTg-AD mouse further support the value of this healthy life-style against neurodegeneration.

  4. Enhanced anti-cancer efficacy on lymph node metastasis using peplomycin adsorbed on small activated carbon particles.

    PubMed

    Ito, M; Hagiwara, A; Iwamoto, A; Shimotsuma, M; Yoneyama, C; Sasabe, T; Takahashi, T

    1991-07-01

    A new dosage form (PEP-CH) of peplomycin was tested for therapeutic efficacy against lymph node metastasis in mice. PEP-CH is a suspension comprising 4 mg/ml of activated carbon, 2 mg/ml of peplomycin and 1.6 mg/ml of polyvinylpyrrolidone in saline. Mice were subcutaneously inoculated with 3 x 10(5) MH134 tumor cells into the left hind paw. Drugs were given on day 10 when cancer had been metastasized in the left popliteal lymph node. Mice were killed on day 17 and the left popliteal lymph node and the left deep inguinal lymph node were extirpated. Since the degree of the metastatic lesion and the lymph node weight correlated with a statistically high probability with each other, the degree of metastatic lesion was evaluated through comparison of lymph node weight. The left popliteal lymph node and the deep inguinal lymph node were 10.5 mg and 4.5 mg in average weight, respectively, in the mice given PEP-CH containing 0.1 mg of peplomycin subcutaneously into the left hind foot-pad. The weights were significantly smaller than those in the mice given an identical dose of peplomycin aqueous solution subcutaneously into the left hind foot-pad or intraperitoneally.

  5. T.Node, industrial version of supernode

    NASA Astrophysics Data System (ADS)

    Flieller, Sylvain

    1989-12-01

    The Esprit I P1085 "SuperNode" project developed a modular reconfigurable archtecture, based on transputers. This highly parallel machine is now marketed by Telmat Informatique under the name T.Node. This paper presents the P1085 project, the architecture of SuperNode, its industrial implementation and its software enviroment.

  6. xF 3(x,Q 2) Structure Function and Gross-Llewellyn Smith Sum Rule with Nuclear Effect and Higher Twist Correction

    NASA Astrophysics Data System (ADS)

    Nath, N. M.; Mukharjee, A.; Das, M. K.; Sarma, J. K.

    2016-12-01

    We present an analysis of the xF3(x,Q2) structure function and Gross-Llewellyn Smith(GLS) sum rule taking into account the nuclear effects and higher twist correction. This analysis is based on the results presented in [N.M. Nath, et al, Indian J. Phys. 90 (2016) 117]. The corrections due to nuclear effects predicted in several earlier analysis are incorporated to our results of xF3(x,Q2) structure function and GLS sum rule for free nucleon, corrected upto next-next-to-leading order (NNLO) perturbative order and calculate the nuclear structure function as well as sum rule for nuclei. In addition, by means of a simple model we have extracted the higher twist contributions to the non-singlet structure function xF3(x,Q2) and GLS sum rule in NNLO perturbative orders and then incorporated them to our results. Our NNLO results along with nuclear effect and higher twist corrections are observed to be compatible with corresponding experimental data and other phenomenological analysis. Support from DAE-BRNS, India, as Major Research Project under Sanction No. 2012/37P/36/BRNS/2018 dated 24 Nov. 2012

  7. Hydrothermal synthesis and photoluminescence of novel green-emitting phosphor Y{sub 1-x}BO{sub 3}:xTb{sup 3+}

    SciTech Connect

    Wang Yuhua . E-mail: wyh@lzu.edu.cn; Wu Chunfang; Zhang Jiachi

    2006-08-10

    Y{sub 1-x}BO{sub 3}:xTb{sup 3+} phosphors were first synthesized by hydrothermal reaction, and the samples were characterized by X-ray powder diffractometry, infrared absorption, nuclear magnetic resonance, scanning electron microscopy and photoluminescence. The results show that single phase is obtained with Tb concentration up to 0.28 and all the samples exhibit flake-like morphology. The sample was determined to be vaterite-type orthoborate and the boron is both four-coordinated (chief) and three-coordinated (few). The Y{sub 1-x}BO{sub 3}:xTb{sup 3+} phosphors showed intense green emission at 550 nm and the intensity of the emission increases with Tb{sup 3+} substitution up to 0.22 and then decreases for higher Tb{sup 3+} content. In the phosphors prepared by the hydrothermal method the concentration quenching is higher than in the phosphors prepared by solid-state reaction; the intensity of emission is stronger in the former than that of the latter. Y{sub 1-x}BO{sub 3}:xTb3{sup +} is a promising phosphor for plasma display panels and hydrargyrum-free lamps.

  8. Megasonic cleaning strategy for sub-10nm photomasks

    NASA Astrophysics Data System (ADS)

    Hsu, Jyh-Wei; Samayoa, Martin; Dress, Peter; Dietze, Uwe; Ma, Ai-Jay; Lin, Chia-Shih; Lai, Rick; Chang, Peter; Tuo, Laurent

    2016-10-01

    One of the main challenges in photomask cleaning is balancing particle removal efficiency (PRE) with pattern damage control. To overcome this challenge, a high frequency megasonic cleaning strategy is implemented. Apart from megasonic frequency and power, photomask surface conditioning also influences cleaning performance. With improved wettability, cleanliness is enhanced while pattern damage risk is simultaneously reduced. Therefore, a particle removal process based on higher megasonic frequencies, combined with proper surface pre-treatment, provides improved cleanliness without the unintended side effects of pattern damage, thus supporting the extension of megasonic cleaning technology into 10nm half pitch (hp) device node and beyond.

  9. Window type: paired 3x2 multipaned steel window flanked by 1x3 ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Window type: paired 3x2 multipaned steel window flanked by 1x3 multipaned steel casements, breaking building corner. Broad overhanging eave also illustrated. Second story detail. Building 13, facing east - Harbor Hills Housing Project, 26607 Western Avenue, Lomita, Los Angeles County, CA

  10. Comparison of Yamax pedometer and GT3X accelerometer steps in a free-living sample

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Our objective was to compare steps detected by the Yamax pedometer (PEDO) versus the GT3X accelerometer (ACCEL) in free-living adults. Daily PEDO and ACCEL steps were collected from a sample of 23 overweight and obese participants (18 females; mean +/- sd: age = 52.6 +/- 8.4 yr.; body mass index = 3...

  11. MPEG-DSPE polymeric micelle for translymphatic chemotherapy of lymph node metastasis.

    PubMed

    Li, Xue; Dong, Qing; Yan, Zhiqiang; Lu, Weiyue; Feng, Lingling; Xie, Cao; Xie, Zuoxu; Su, Bingxia; Liu, Min

    2015-06-20

    Lymph node metastasis is one of the major pathways for tumor formation and it is difficult to deliver chemotherapeutics at therapeutic concentrations to lymph node metastasis. This study prepared methyl poly(ethylene glycol)-distearoylphosphatidylethanolamine/doxorubicin (MPEG-DSPE/DOX) micelle for the treatment of lymph node metastasis. The MPEG-DSPE/DOX micelle prepared were of spherical morphology with a particle size of 20 ± 5 nm. The uptake rates of DOX and MPEG-DSPE/DOX micelle by A375 cells were 51.2% and 88.7%, respectively. The phagocytosis rate of MPEG-DSPE/Rhodamine B micelle by RAW264.7 cells was 17.2-fold lower than for Rhodamine B alone. After subcutaneous injection, MPEG-DSPE micelle underwent lymphatic absorption and accumulated in popliteal lymph nodes. MPEG-DSPE/DOX micelle significantly alleviated damage to the subcutaneous tissue of the injection sites compared with DOX alone. We established a model of nude mice bearing lymph node metastasis of A375 cells. After subcutaneous injection, the weights of both the popliteal and iliac lymph nodes of the MPEG-DSPE/DOX micelle group were significantly lower than in the saline and DOX groups. MPEG-DSPE/DOX micelle effectively killed the tumor cells in popliteal and iliac lymph nodes. In conclusion, MPEG-DSPE micelle is a promising drug delivery system for the treatment of lymph node metastasis.

  12. The sentinel node in gynaecological malignancies

    PubMed Central

    Balega, J; Van Trappen, P O

    2006-01-01

    As lymph node metastasis is one of the earliest features of tumour cell spread in most human cancers, assessment of the regional lymph nodes is required for tumour staging, determining prognosis and planning adjuvant therapeutic strategies. However, complete lymph node dissections are frequently associated with significant complications. Conjugating the diagnostic advantages with decreased morbidity, the sentinel node concept represents one of the most recent advances in surgical oncology. In this review we briefly highlight the historical background of the development of the sentinel node concept, the anatomical evidence for applying the sentinel node concept in pelvic gynaecological cancers and the technical aspects of sentinel node detection. We discuss recent studies in vulval, cervical and endometrial cancer. PMID:16520291

  13. Dedicated heterogeneous node scheduling including backfill scheduling

    DOEpatents

    Wood, Robert R.; Eckert, Philip D.; Hommes, Gregg

    2006-07-25

    A method and system for job backfill scheduling dedicated heterogeneous nodes in a multi-node computing environment. Heterogeneous nodes are grouped into homogeneous node sub-pools. For each sub-pool, a free node schedule (FNS) is created so that the number of to chart the free nodes over time. For each prioritized job, using the FNS of sub-pools having nodes useable by a particular job, to determine the earliest time range (ETR) capable of running the job. Once determined for a particular job, scheduling the job to run in that ETR. If the ETR determined for a lower priority job (LPJ) has a start time earlier than a higher priority job (HPJ), then the LPJ is scheduled in that ETR if it would not disturb the anticipated start times of any HPJ previously scheduled for a future time. Thus, efficient utilization and throughput of such computing environments may be increased by utilizing resources otherwise remaining idle.

  14. Transformation of Sintered CsPbBr3 Nanocrystals to Cubic CsPbI3 and Gradient CsPbBrxI3-x through Halide Exchange.

    PubMed

    Hoffman, Jacob B; Schleper, A Lennart; Kamat, Prashant V

    2016-07-13

    All-inorganic cesium lead halide (CsPbX3, X = Br(-), I(-)) perovskites could potentially provide comparable photovoltaic performance with enhanced stability compared to organic-inorganic lead halide species. However, small-bandgap cubic CsPbI3 has been difficult to study due to challenges forming CsPbI3 in the cubic phase. Here, a low-temperature procedure to form cubic CsPbI3 has been developed through a halide exchange reaction using films of sintered CsPbBr3 nanocrystals. The reaction was found to be strongly dependent upon temperature, featuring an Arrhenius relationship. Additionally, film thickness played a significant role in determining internal film structure at intermediate reaction times. Thin films (50 nm) showed only a small distribution of CsPbBrxI3-x species, while thicker films (350 nm) exhibited much broader distributions. Furthermore, internal film structure was ordered, featuring a compositional gradient within film. Transient absorption spectroscopy showed the influence of halide exchange on the excited state of the material. In thicker films, charge carriers were rapidly transferred to iodide-rich regions near the film surface within the first several picoseconds after excitation. This ultrafast vectorial charge-transfer process illustrates the potential of utilizing compositional gradients to direct charge flow in perovskite-based photovoltaics.

  15. Design strategy for integrating DSA via patterning in sub-7 nm interconnects

    NASA Astrophysics Data System (ADS)

    Karageorgos, Ioannis; Ryckaert, Julien; Tung, Maryann C.; Wong, H.-S. P.; Gronheid, Roel; Bekaert, Joost; Karageorgos, Evangelos; Croes, Kris; Vandenberghe, Geert; Stucchi, Michele; Dehaene, Wim

    2016-03-01

    In recent years, major advancements have been made in the directed self-assembly (DSA) of block copolymers (BCPs). As a result, the insertion of DSA for IC fabrication is being actively considered for the sub-7nm nodes. At these nodes the DSA technology could alleviate costs for multiple patterning and limit the number of litho masks that would be required per metal layer. One of the most straightforward approaches for DSA implementation would be for via patterning through templated DSA, where hole patterns are readily accessible through templated confinement of cylindrical phase BCP materials. Our in-house studies show that decomposition of via layers in realistic circuits below the 7nm node would require at least many multi-patterning steps (or colors), using 193nm immersion lithography. Even the use of EUV might require double patterning in these dimensions, since the minimum via distance would be smaller than EUV resolution. The grouping of vias through templated DSA can resolve local conflicts in high density areas. This way, the number of required colors can be significantly reduced. For the implementation of this approach, a DSA-aware mask decomposition is required. In this paper, our design approach for DSA via patterning in sub-7nm nodes is discussed. We propose options to expand the list of DSA-compatible via patterns (DSA letters) and we define matching cost formulas for the optimal DSA-aware layout decomposition. The flowchart of our proposed approach tool is presented.

  16. A dual-modal magnetic nanoparticle probe for preoperative and intraoperative mapping of sentinel lymph nodes by magnetic resonance and near infrared fluorescence imaging.

    PubMed

    Zhou, Zhengyang; Chen, Hongwei; Lipowska, Malgorzata; Wang, Liya; Yu, Qiqi; Yang, Xiaofeng; Tiwari, Diana; Yang, Lily; Mao, Hui

    2013-07-01

    The ability to reliably detect sentinel lymph nodes for sentinel lymph node biopsy and lymphadenectomy is important in clinical management of patients with metastatic cancers. However, the traditional sentinel lymph node mapping with visible dyes is limited by the penetration depth of light and fast clearance of the dyes. On the other hand, sentinel lymph node mapping with radionucleotide technique has intrinsically low spatial resolution and does not provide anatomic details in the sentinel lymph node mapping procedure. This work reports the development of a dual modality imaging probe with magnetic resonance and near infrared imaging capabilities for sentinel lymph node mapping using magnetic iron oxide nanoparticles (10 nm core size) conjugated with a near infrared molecule with emission at 830 nm. Accumulation of magnetic iron oxide nanoparticles in sentinel lymph nodes leads to strong T2 weighted magnetic resonance imaging contrast that can be potentially used for preoperative localization of sentinel lymph nodes, while conjugated near infrared molecules provide optical imaging tracking of lymph nodes with a high signal to background ratio. The new magnetic nanoparticle based dual imaging probe exhibits a significant longer lymph node retention time. Near infrared signals from nanoparticle conjugated near infrared dyes last up to 60 min in sentinel lymph node compared to that of 25 min for the free near infrared dyes in a mouse model. Furthermore, axillary lymph nodes, in addition to sentinel lymph nodes, can be also visualized with this probe, given its slow clearance and sufficient sensitivity. Therefore, this new dual modality imaging probe with the tissue penetration and sensitive detection of sentinel lymph nodes can be applied for preoperative survey of lymph nodes with magnetic resonance imaging and allows intraoperative sentinel lymph node mapping using near infrared optical devices.

  17. Network model with structured nodes

    NASA Astrophysics Data System (ADS)

    Frisco, Pierluigi

    2011-08-01

    We present a network model in which words over a specific alphabet, called structures, are associated to each node and undirected edges are added depending on some distance measure between different structures. This model shifts the underlying principle of network generation from a purely mathematical one to an information-based one. It is shown how this model differs from the Barábasi-Albert and duplication models and how it can generate networks with topological features similar to biological networks: power law degree distribution, low average path length, clustering coefficient independent from the network size, etc. Two biological networks: S. cerevisiae gene network and E. coli protein-protein interaction network, are replicated using this model.

  18. Nodes packaging option for Space Station application

    NASA Technical Reports Server (NTRS)

    So, Kenneth T.; Hall, John B., Jr.

    1988-01-01

    Space Station nodes packaging analyses are presented relative to moving environmental control and life support system (ECLSS) equipment from the habitability (HAB) module to node 4, in order to provide more living space and privacy for the crew, remove inherently noisy equipment from the crew quarter, retain crew waste collection and processing equipment in one location, and keep objectionable odor away from the living quarters. In addition, options for moving external electronic equipment from the Space Station truss to pressurized node 3 were evaluated in order to reduce the crew extravehicular-activity time required to install and maintain the equipment. Node size considered in this analysis is 3.66 m in diameter and 5.38 m long. The analysis shows that significant external electronic equipment could be relocated from the Space Station truss structure to node 3, and nonlife critical ECLSS HAB module equipment could be moved to node 4.

  19. Laboratory Detection of IZnCH_{3} (X^{1}A_{1}) : Further Evidence for Zinc Insertion

    NASA Astrophysics Data System (ADS)

    Bucchino, Matthew P.; Young, Justin P.; Sheridan, Phil M.; Ziurys, Lucy M.

    2013-06-01

    Millimeter-wave direct absorption techniques were used to record the pure rotational spectrum of IZnCH_{3} (X^{1}A_{1}). This species was produced by the reaction of zinc vapor with ICH_{3} in the presence of a DC discharge. Rotational transitions ranging from J = 109 {→} 108 to J = 122 {→} 121 were recorded for I^{64}ZnCH_{3} and I^{66}ZnCH_{3} in the frequency range of 250{-290} GHz. The Ka = 0{-4} components were measured for each transition, with the K-ladder structure and nuclear spin statistics indicative of a symmetric top. As with HZnCH_{3} (X^{1}A_{1}), the detection of IZnCH_{3} provides further evidence for a zinc insertion process.

  20. Fixing All Moduli for M-Theory on K3xK3

    SciTech Connect

    Aspinwall, Paul S.; Kallosh, Renata; /Stanford U., Phys. Dept.

    2005-06-15

    We analyze M-theory compactified on K3 x K3 with fluxes preserving half the supersymmetry and its F-theory limit, which is dual to an orientifold of the type IIB string on K3 x (T{sup 2}/Z{sub 2}). The geometry of attractive K3 surfaces plays a significant role in the analysis. We prove that the number of choices for the K3 surfaces is finite and we show how they can be completely classified. We list the possibilities in one case. We then study the instanton effects and see that they will generically fix all of the moduli. We also discuss situations where the instanton effects might not fix all the moduli.

  1. Superconductivity in the antiperovskite Dirac-metal oxide Sr3-xSnO.

    PubMed

    Oudah, Mohamed; Ikeda, Atsutoshi; Hausmann, Jan Niklas; Yonezawa, Shingo; Fukumoto, Toshiyuki; Kobayashi, Shingo; Sato, Masatoshi; Maeno, Yoshiteru

    2016-12-12

    Investigations of perovskite oxides triggered by the discovery of high-temperature and unconventional superconductors have had crucial roles in stimulating and guiding the development of modern condensed-matter physics. Antiperovskite oxides are charge-inverted counterpart materials to perovskite oxides, with unusual negative ionic states of a constituent metal. No superconductivity was reported among the antiperovskite oxides so far. Here we present the first superconducting antiperovskite oxide Sr3-xSnO with the transition temperature of around 5 K. Sr3SnO possesses Dirac points in its electronic structure, and we propose from theoretical analysis a possibility of a topological odd-parity superconductivity analogous to the superfluid (3)He-B in moderately hole-doped Sr3-xSnO. We envision that this discovery of a new class of oxide superconductors will lead to a rapid progress in physics and chemistry of antiperovskite oxides consisting of unusual metallic anions.

  2. Superconductivity in the antiperovskite Dirac-metal oxide Sr3-xSnO

    NASA Astrophysics Data System (ADS)

    Oudah, Mohamed; Ikeda, Atsutoshi; Hausmann, Jan Niklas; Yonezawa, Shingo; Fukumoto, Toshiyuki; Kobayashi, Shingo; Sato, Masatoshi; Maeno, Yoshiteru

    2016-12-01

    Investigations of perovskite oxides triggered by the discovery of high-temperature and unconventional superconductors have had crucial roles in stimulating and guiding the development of modern condensed-matter physics. Antiperovskite oxides are charge-inverted counterpart materials to perovskite oxides, with unusual negative ionic states of a constituent metal. No superconductivity was reported among the antiperovskite oxides so far. Here we present the first superconducting antiperovskite oxide Sr3-xSnO with the transition temperature of around 5 K. Sr3SnO possesses Dirac points in its electronic structure, and we propose from theoretical analysis a possibility of a topological odd-parity superconductivity analogous to the superfluid 3He-B in moderately hole-doped Sr3-xSnO. We envision that this discovery of a new class of oxide superconductors will lead to a rapid progress in physics and chemistry of antiperovskite oxides consisting of unusual metallic anions.

  3. Sentinel lymph node biopsy reveals a positive popliteal node in clear cell sarcoma.

    PubMed

    Nishida, Yoshihiro; Yamada, Yoshihisa; Tsukushi, Satoshi; Shibata, Shinichi; Ishiguro, Naoki

    2005-01-01

    Clear cell sarcoma of the tendons and aponeuroses is an aggressive, rare soft tissue tumor with frequent metastases to regional lymph nodes. Sentinel lymph node biopsy, which has dramatically changed the management of melanoma, was used for clear cell sarcoma for an evaluation of popliteal and groin lymph node status. Although all isosulfan blue-stained groin lymph nodes were negative for malignancy, a popliteal lymph node was positive. Adjuvant 50 Gy of radiotherapy to the popliteal node might have been effective for local control for one year.

  4. Magnetic and Structural Properties of Rapidly Quenched Tetragonal Mn3-xGa Nanostructures

    SciTech Connect

    Huh, Y; Kharel, P; Shah, VR; Krage, E; Skomski, R; Shield, JE; Sellmyer, DJ

    2013-07-01

    Nanostructured Mn3-x Ga ribbons with x = 0, 0.4, 0.9 and 1.1 were prepared using arc-melting, melt-spinning and annealing. As-spun samples crystallized into hexagonal D0(19) and cubic L2(1) Heusler crystal structures based on the concentration of Mn in Mn3-xGa. Upon vacuum-annealing the samples at 450 degrees C for about 50 hours, both the hexagonal and cubic structures transformed into a tetragonal D0(22) structure. High-temperature x-ray diffraction and high-temperature magnetometry showed that the samples with low Mn content (Mn-1.9 Ga and Mn-2.1 Ga) retain their tetragonal structure up to 850 K but the samples with high Mn concentrations (Mn-2.6 Ga and Mn-3.0 Ga) undergo a structural phase transition from tetragonal to hexagonal phases around 800 K. The magnetic properties of Mn3-x Ga ribbons were very sensitive to Mn concentration, where the magnetization and anisotropy energy increased and the coercivity decreased as x increased from 0 to 1.1. Although the Curie temperatures of Mn-2.6 Ga and Mn-3.0 Ga samples could not be determined because of the structural phase transition, the Curie temperature decreased with increasing x in Mn3-x Ga. The maximum magnetization of 57 emu/g (300 emu/cm(3)) and the coercivity of 6.5 kOe were measured in the Mn-1.9 Ga and Mn-3.0 Ga ribbons, respectively.

  5. Design of 3x3 focusing array for heavy ion driver. Final report on CRADA

    SciTech Connect

    Martovetsky, N N

    2005-03-30

    This memo presents a design of a 3 x 3 quadrupole array for HIF. It contains 3 D magnetic field computations of the array build with racetrack coils with and without different shields. It is shown that it is possible to have a low error magnetic field in the cells and shield the stray fields to acceptable levels. The array design seems to be a practical solution to any size array for future multi-beam heavy ion fusion drivers.

  6. Drainage of cells and soluble antigen from the CNS to regional lymph nodes.

    PubMed

    Laman, Jon D; Weller, Roy O

    2013-09-01

    Despite the absence of conventional lymphatics, there is efficient drainage of both cerebrospinal fluid (CSF) and interstitial fluid (ISF) from the CNS to regional lymph nodes. CSF drains from the subarachnoid space by channels that pass through the cribriform plate of the ethmoid bone to the nasal mucosa and cervical lymph nodes in animals and in humans; antigen presenting cells (APC) migrate along this pathway to lymph nodes. ISF and solutes drain from the brain parenchyma to cervical lymph nodes by a separate route along 100-150 nm wide basement membranes in the walls of cerebral capillaries and arteries. This pathway is too narrow for the migration of APC so it is unlikely that APC traffic directly from brain parenchyma to lymph nodes by this route. We present a model for the pivotal involvement of regional lymph nodes in immunological reactions of the CNS. The role of regional lymph nodes in immune reactions of the CNS in virus infections, the remote influence of the gut microbiota, multiple sclerosis and stroke are discussed. Evidence is presented for the role of cervical lymph nodes in the induction of tolerance and its influence on neuroimmunological reactions. We look to the future by examining how nanoparticle technology will enhance our understanding of CNS-lymph node connections and by reviewing the implications of lymphatic drainage of the brain for diagnosis and therapy of diseases of the CNS ranging from neuroimmunological disorders to dementias. Finally, we review the challenges and opportunities for progress in CNS-lymph node interactions and their involvement in disease processes.

  7. Nanocrystals of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, and I): Novel Optoelectronic Materials Showing Bright Emission with Wide Color Gamut

    PubMed Central

    2015-01-01

    Metal halides perovskites, such as hybrid organic–inorganic CH3NH3PbI3, are newcomer optoelectronic materials that have attracted enormous attention as solution-deposited absorbing layers in solar cells with power conversion efficiencies reaching 20%. Herein we demonstrate a new avenue for halide perovskites by designing highly luminescent perovskite-based colloidal quantum dot materials. We have synthesized monodisperse colloidal nanocubes (4–15 nm edge lengths) of fully inorganic cesium lead halide perovskites (CsPbX3, X = Cl, Br, and I or mixed halide systems Cl/Br and Br/I) using inexpensive commercial precursors. Through compositional modulations and quantum size-effects, the bandgap energies and emission spectra are readily tunable over the entire visible spectral region of 410–700 nm. The photoluminescence of CsPbX3 nanocrystals is characterized by narrow emission line-widths of 12–42 nm, wide color gamut covering up to 140% of the NTSC color standard, high quantum yields of up to 90%, and radiative lifetimes in the range of 1–29 ns. The compelling combination of enhanced optical properties and chemical robustness makes CsPbX3 nanocrystals appealing for optoelectronic applications, particularly for blue and green spectral regions (410–530 nm), where typical metal chalcogenide-based quantum dots suffer from photodegradation. PMID:25633588

  8. High Curie temperature and coercivity performance of Fe3-xCrxSe4 nanostructures.

    PubMed

    Li, Shao-jie; Li, Da; Liu, Wei; Zhang, Zhidong

    2015-03-12

    Monoclinic Fe3-xCrxSe4 nanostructures (0≤x≤2.5) were synthesized using a high-temperature solution chemical method. With increasing the Cr doping, the peak positions in the X-ray diffraction (XRD) patterns of Fe3-xCrxSe4 nanostructures slightly shifted to lower 2θ values due to the changes in lattice parameters. Expansions in the unit cell volumes of Fe3-xCrxSe4 nanostructures (x>0.3) may have been responsible for enhancing the ferromagnetic (FM) interaction between magnetic ions, which resulted in a significant increase in the Curie temperature (TC) from 331 K for Fe3Se4 to 429 K for FeCr2Se4, distinctly differing from the magnetic properties of the corresponding bulk materials. A room-temperature coercivity (HC) analysis showed an obvious increase from 3.2 kOe for Fe3Se4 to 12 kOe for Fe2.3Cr0.7Se4 nanostructure, but gradually decreased upon further increasing the Cr content.

  9. Imaging of head and neck lymph nodes.

    PubMed

    Eisenmenger, Laura B; Wiggins, Richard H

    2015-01-01

    The cervical lymph nodes can be affected by a variety of infectious, inflammatory, benign, and malignant pathologic conditions. Clinical history and physical examination with the complementary use of imaging is essential to accurately make a diagnosis or appropriate differential. Knowledge of cervical lymph node anatomy, drainage pathways, morphologic variations, and common nodal pathology is key to correct interpretation of cervical lymph nodes on imaging. Computed tomography (CT), MR, ultrasound, and PET/CT are complementary imaging modalities that can be used in the evaluation of cervical lymph node pathology.

  10. A new measurement of the cosmic ray energy spectrum between 3 x 10 to the 15th power eV and 3 x 10 to the 16th power eV

    NASA Technical Reports Server (NTRS)

    Gregory, A. G.; Patterson, J. R.; Protheroe, R. J.

    1985-01-01

    A new Cerenkov photon density spectrum measurement is reported. The derivation of the primary cosmic ray energy spectrum for energies from 3x10 to the 15th power eV to 3x10 to the 16th power eV are presented.

  11. EUV actinic defect inspection and defect printability at the sub-32 nm half pitch

    SciTech Connect

    Huh, Sungmin; Kearney, Patrick; Wurm, Stefan; Goodwin, Frank; Han, Hakseung; Goldberg, Kenneth; Mochi, Iacopp; Gullikson, Eric M.

    2009-08-01

    Extreme ultraviolet (EUV) mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360, operated at SEMA TECH's Mask Blank Development Center (MBDC) in Albany, NY, has a sensitivity to multilayer defects down to 40-45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for a next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. Defect mitigation technology is proposed to take advantage of mask blanks with some defects. This technology will reduce the cost of ownership of EUV mask blanks. This paper will also discuss the kind of infrastructure that will be required for the development and mass production stages.

  12. The impact of axillary lymph nodes removed in staging of node-positive breast carcinoma

    SciTech Connect

    Kuru, Bekir . E-mail: bekirkuru@hotmail.com; Bozgul, Mustafa

    2006-12-01

    Purpose: Number of positive lymph nodes in the axilla and pathologic lymph node status (pN) have a great impact on staging according to the current American Joint Committee on Cancer staging system of breast carcinoma. Our aim was to define whether the total number of removed axillary lymph nodes influences the pN and thus the staging. Methods and Materials: The records of 798 consecutive invasive breast cancer patients with T1-3 tumors and positive axillary lymph nodes who underwent modified radical mastectomy between 1999 and 2005 in our hospital were reviewed. The total number of removed nodes were grouped, and compared with the patient and tumor characteristics and the influence of the number of nodes removed on the staging was analyzed. Results: The proportion of patients with {>=}4 positive nodes (59%), and pN3 status (51%) were the highest in the group with 21-25 nodes removed. Compared with patients with 1-20 nodes removed, the proportion of patients with {>=}4 positive nodes (52%), and pN3 status (46%) were significantly higher in those with more than 20 nodes removed. Although the proportion of Stage IIA and IIB decreased, the proportion of Stage IIIA and IIIC increased in patients with >20 nodes removed compared with those with 1-20 nodes removed. Conclusions: In patients with axillary node-positive breast carcinoma, staging is highly influenced by total number of removed nodes. Levels I-III axillary dissection with more than 20 axillary lymph nodes removed could lead to more effective adjuvant chemotherapy and increases substantially the proportion of patients to receive radiotherapy.

  13. Flexible electrochromics: magnetron sputtered tungsten oxide (WO3-x) thin films on Lexan (optically transparent polycarbonate) substrates

    NASA Astrophysics Data System (ADS)

    Uday Kumar, K.; Murali, Dhanya S.; Subrahmanyam, A.

    2015-06-01

    Tungsten oxide (WO3-x) based electrochromics on flexible substrates is a topic of recent interest. The present communication reports the electrochromic properties of WO3-x thin films grown on lexan, an optically transparent polycarbonate thermoplastic substrate. The WO3-x films are prepared at room temperature (300 K) by the reactive DC magnetron sputtering technique. The physical properties of metal oxide thin films are known to be controlled by the oxygen stoichiometry of the film. In the present work, the WO3-x thin films are prepared by varying the oxygen flow rates. All the WO3-x thin films are amorphous in nature. The electrochromic performance of the WO3-x thin films is evaluated by cyclic voltammetry measurements on tin doped indium oxide (ITO) coated lexan and glass substrates. The optical band gap of WO3-x thin films grown on lexan substrates (at any given oxygen flow rate) is significantly higher than those grown on glass substrates. The coloration efficiency of WO3-x thin films (at an oxygen flow rate of 10 sccm) on lexan substrates is: 143.9 cm2 C-1 which is higher compared to that grown on glass: 90.4 cm2 C-1.

  14. Enhancement of photoelectric response of bacteriorhodopsin by multilayered WO3 x H2O nanocrystals/PVA membrane.

    PubMed

    Li, Rui; Hu, Fengping; Bao, Qiaoliang; Bao, Shujuan; Qiao, Yan; Yu, Shucong; Guo, Jun; Li, Chang Ming

    2010-02-07

    For the first time, a multilayered WO(3) x H(2)O/PVA membrane on bacteriorhodopsin (bR) is constructed to significantly enhance the photoelectric response of bR by the spillover effect of WO(3) x H(2)O nanocrystals, providing great potential in its important applications in bioelectronics and proton exchange membrane fuel cells.

  15. Salvage Lymph Node Dissection for Node-only Recurrence of Prostate Cancer: Ready for Prime Time?

    PubMed

    Suardi, Nazareno; Briganti, Alberto; Gandaglia, Giorgio; Fossati, Nicola; Montorsi, Francesco

    2016-12-30

    Several studies show that salvage lymph-node dissection for node-only recurrence of prostate cancer after radical treatment might represent a viable treatment modality for node-only recurrent PCa. However, as long as high quality data is not available, this approach should still be considered experimental.

  16. A multiple node software development environment

    SciTech Connect

    Heinicke, P.; Nicinski, T.; Constanta-Fanourakis, P.; Petravick, D.; Pordes, R.; Ritchie, D.; White, V.

    1987-06-01

    Experimenters on over 30 DECnet nodes at Fermilab use software developed, distributed, and maintained by the Data Acquisition Software Group. A general methodology and set of tools have been developed to distribute, use and manage the software on different sites. The methodology and tools are of interest to any group developing and using software on multiple nodes.

  17. Mediastinal lymph node size in lung cancer

    SciTech Connect

    Libshitz, H.I.; McKenna, R.J. Jr.

    1984-10-01

    Using a size criterion of 1 cm or greater as evidence for abnormality, the size of mediastinal lymph nodes identified by computed tomography (CT) was a poor predictor of mediastinal lymph node metastases in a series of 86 patients who had surgery for bronchogenic carcinoma. The surgery included full nodal sampling in all patients. Of the 86 patients, 36 had nodes greater than or equal to 1 cm identified by CT. Of the 21 patients with mediastinal metastases proven at surgery, 14 had nodes greater than or equal to 1 cm (sensitivity = 67%). Of the 65 patients without mediastinal metastases, 22 had nodes greater than or equal to 1 cm. Obstructive pneumonia and/or pulmonary collapse distal to the cancer was present in 39 patients (45%). Obstructive pneumonia and/or pulmonary collapse is a common occurrence in bronchogenic carcinoma, but mediastinal nodes greater than or equal to 1 cm in this circumstance cannot be presumed to represent metastatic disease. Metastatic mediastinal lymph node involvement was related to nodal size also in patients with evidence of prior granulomatous disease and in patients with no putative benign cause for nodes greater than or equal to 1 cm.

  18. 0.7-NA DUV step-and-scan system for 150-nm imaging with improved overlay

    NASA Astrophysics Data System (ADS)

    van Schoot, Jan B.; Bornebroek, Frank; Suddendorf, Manfred; Mulder, Melchior; van der Spek, Jeroen; Stoeten, Jan; Hunter, Adolph; Ruemmer, Peter

    1999-07-01

    To extend KrF lithography below the 180nm SIA design rule node in manufacturing, an advanced DUV step and scan system utilizing a lens with an NA up to 0.7 will be required to provide sufficient process latitude. Towards the SIA's 150nm design rule node, manufacturing challenges for 248nm lithography include contact hole printing, iso-dense bias control and adequate across the field CD uniformity. All will benefit from higher NA lenses. In the paper, result obtained on a PAS 5500/700B DUV Step and Scan system are presented. The system design is based on the PAS 5500/500 with a new 0.7NA Starlith lens, AERIAL II illuminator and ATHENA advanced alignment system. Imaging of dense and isolated lines at 180nm, 150nm and below as well as 180nm and 160nm contact holes is shown. In addition to imaging performance, image plane deviation, system distortion fingerprints, single-machine overlay and multiple-machine matching results are shown. Using the ATHENA alignment system, alignment reproducibility as well as overlay result on CMP wafers will be shown. It is concluded that this exposure tool is capable of delivering imaging and overlay performance required for mass production at the 150nm design rule node, with potential for R and D applications beyond.

  19. Locating influential nodes in complex networks

    NASA Astrophysics Data System (ADS)

    Malliaros, Fragkiskos D.; Rossi, Maria-Evgenia G.; Vazirgiannis, Michalis

    2016-01-01

    Understanding and controlling spreading processes in networks is an important topic with many diverse applications, including information dissemination, disease propagation and viral marketing. It is of crucial importance to identify which entities act as influential spreaders that can propagate information to a large portion of the network, in order to ensure efficient information diffusion, optimize available resources or even control the spreading. In this work, we capitalize on the properties of the K-truss decomposition, a triangle-based extension of the core decomposition of graphs, to locate individual influential nodes. Our analysis on real networks indicates that the nodes belonging to the maximal K-truss subgraph show better spreading behavior compared to previously used importance criteria, including node degree and k-core index, leading to faster and wider epidemic spreading. We further show that nodes belonging to such dense subgraphs, dominate the small set of nodes that achieve the optimal spreading in the network.

  20. Expandable and reconfigurable instrument node arrays

    NASA Technical Reports Server (NTRS)

    Hilliard, Lawrence M. (Inventor); Deshpande, Manohar (Inventor)

    2012-01-01

    An expandable and reconfigurable instrument node includes a feature detection means and a data processing portion in communication with the feature detection means, the data processing portion configured and disposed to process feature information. The instrument node further includes a phase locked loop (PLL) oscillator in communication with the data processing portion, the PLL oscillator configured and disposed to provide PLL information to the processing portion. The instrument node further includes a single tone transceiver and a pulse transceiver in communication with the PLL oscillator, the single tone transceiver configured and disposed to transmit or receive a single tone for phase correction of the PLL oscillator and the pulse transceiver configured and disposed to transmit and receive signals for phase correction of the PLL oscillator. The instrument node further includes a global positioning (GPA) receiver in communication with the processing portion, the GPS receiver configured and disposed to establish a global position of the instrument node.

  1. Locating influential nodes in complex networks

    PubMed Central

    Malliaros, Fragkiskos D.; Rossi, Maria-Evgenia G.; Vazirgiannis, Michalis

    2016-01-01

    Understanding and controlling spreading processes in networks is an important topic with many diverse applications, including information dissemination, disease propagation and viral marketing. It is of crucial importance to identify which entities act as influential spreaders that can propagate information to a large portion of the network, in order to ensure efficient information diffusion, optimize available resources or even control the spreading. In this work, we capitalize on the properties of the K-truss decomposition, a triangle-based extension of the core decomposition of graphs, to locate individual influential nodes. Our analysis on real networks indicates that the nodes belonging to the maximal K-truss subgraph show better spreading behavior compared to previously used importance criteria, including node degree and k-core index, leading to faster and wider epidemic spreading. We further show that nodes belonging to such dense subgraphs, dominate the small set of nodes that achieve the optimal spreading in the network. PMID:26776455

  2. High speed polling protocol for multiple node network

    NASA Technical Reports Server (NTRS)

    Kirkham, Harold (Inventor)

    1995-01-01

    The invention is a multiple interconnected network of intelligent message-repeating remote nodes which employs a remote node polling process performed by a master node by transmitting a polling message generically addressed to all remote nodes associated with the master node. Each remote node responds upon receipt of the generically addressed polling message by transmitting a poll-answering informational message and by relaying the polling message to other adjacent remote nodes.

  3. 3X compound parabolic concentrating (CPC) solar energy collector. Final technical report

    SciTech Connect

    Ballheim, R.W.

    1980-04-25

    Chamberlain engineers designed a 3X compound parabolic concentrating (CPC) collector for the subject contract. The collector is a completely housed, 105.75 x 44.75 x 10.23-inch, 240-pound unit with six each evacuated receiver assemblies, a center manifold and a one-piece glass cover. A truncated version of a CPC trough reflector system and the General Electric Company tubular evacuated receiver have been integrated with a mass producible collector design suitable for operation at 250 to 450/sup 0/F. The key criterion for optimization of the design was minimization of the cost per Btu collected annually at an operating temperature of 400/sup 0/F. The reflector is a 4.1X design truncated to a total height of 8.0 inches with a resulting actual concentration ratio of 2.6 to 1. The manifold is an insulated area housing the fluid lines which connect the six receivers in series with inlet and outlet tubes extending from one side of the collector at the center. The reflectors are polished, anodized aluminum which are shaped by the roll form process. The housing is painted, galvanized steel, and the cover glass is 3/16-inch thick tempered, low iron glass. The collector requires four slope adjustments per year for optimum effectiveness. Chamberlain produced ten 3X CPC collectors for the subject contract. Two collectors were used to evaluate assembly procedures, six were sent to the project officer in Albuquerque, New Mexico, one was sent to Argonne National Laboratory for performance testing and one remained with the Company. A manufacturing cost study was conducted to estimate limited mass production costs, explore cost reduction ideas and define tooling requirements. The final effort discussed shows the preliminary design for application of a 3X CPC solar collector system for use in the Iowa State Capitol complex.

  4. Autoimmune Manifestations in the 3xTg-AD Model of Alzheimer's Disease

    PubMed Central

    Marchese, Monica; Cowan, David; Head, Elizabeth; Ma, Donglai; Karimi, Khalil; Ashthorpe, Vanessa; Kapadia, Minesh; Zhao, Hui; Davis, Paulina; Sakic, Boris

    2015-01-01

    Background Immune system activation is frequently reported in patients with Alzheimer's disease (AD). However, it remains unknown whether this is a cause, a consequence, or an epiphenomenon of brain degeneration. Objective The present study examines whether immunological abnormalities occur in a well-established murine AD model and if so, how they relate temporally to behavioral deficits and neuropathology. Methods A broad battery of tests was employed to assess behavioral performance and autoimmune/inflammatory markers in 3xTg-AD (AD) mice and wild type controls from 1.5 to 12 months of age. Results Aged AD mice displayed severe manifestations of systemic autoimmune/inflammatory disease, as evidenced by splenomegaly, hepatomegaly, elevated serum levels of anti-nuclear/anti-dsDNA antibodies, low hematocrit, and increased number of double-negative T splenocytes. However, anxiety-related behavior and altered spleen function were evident as early as 2 months of age, thus preceding typical AD-like brain pathology. Moreover, AD mice showed altered olfaction and impaired “cognitive” flexibility in the first 6 months of life, suggesting mild cognitive impairment-like manifestations before general learning/memory impairments emerged at an older age. Interestingly, all of these features were present in 3xTg-AD mice prior to significant amyloid-β or tau pathology. Conclusion The results indicate that behavioral deficits in AD mice develop in parallel with systemic autoimmune/inflammatory disease. These changes antedate AD-like neuropathology, thus supporting a causal link between autoimmunity and aberrant behavior. Consequently, 3xTg-AD mice may be a useful model in elucidating the role of immune system in the etiology of AD. PMID:24150111

  5. Polar decomposition of 3 x 3 Mueller matrix: a tool for quantitative tissue polarimetry.

    PubMed

    Swami, M K; Manhas, S; Buddhiwant, P; Ghosh, N; Uppal, A; Gupta, P K

    2006-10-02

    The polarization properties of any medium are completely described by the sixteen element Mueller matrix that relates the polarization parameters of the light incident on the medium to that emerging from it. Measurement of all the elements of the matrix requires a minimum of sixteen measurements involving both linear and circularly polarized light. However, for many diagnostic applications, it would be useful if the polarization parameters can be quantified with linear polarization measurements alone. In this paper, we present a method based on polar decomposition of Mueller matrix for quantification of the polarization parameters of a scattering medium using the nine element (3 x 3) Mueller matrix that requires linear polarization measurements only. The methodology for decomposition of the 3 x 3 Mueller matrix is based on the previously developed decomposition process for sixteen element (4 x 4) Mueller matrix but with an assumption that the depolarization of linearly polarized light due to scattering is independent of the orientation angle of the incident linear polarization vector. Studies conducted on various scattering samples demonstrated that this assumption is valid for a turbid medium like biological tissue where the depolarization of linearly polarized light primarily arises due to the randomization of the field vector's direction as a result of multiple scattering. For such medium, polar decomposition of 3 x 3 Mueller matrix can be used to quantify the four independent polarization parameters namely, the linear retardance (delta ), the circular retardance (psi), the linear depolarization coefficient (Delta) and the linear diattenuation (d) with reasonable accuracy. Since this approach requires measurements using linear polarizers only, it considerably simplifies measurement procedure and might find useful applications in tissue diagnosis using the retrieved polarization parameters.

  6. Label-free Detection of Lymph Node Metastases with US-guided Functional Photoacoustic Imaging

    PubMed Central

    Luke, Geoffrey P.

    2015-01-01

    Purpose To determine the ability of ultrasonography (US)-guided spectroscopic photoacoustic (sPA) imaging to depict changes in blood oxygen saturation (SO2) in metastatic lymph nodes of a mouse model of oral cancer. Materials and Methods All studies were performed by following protocols approved by the institutional animal care and use committee at the University of Texas at Austin. Coregistered US and photoacoustic images were acquired spanning volumes containing a total of 31 lymph nodes in 17 female nu/nu mice. The mice were either healthy (three mice, five nodes) or bearing a primary tumor consisting of luciferase-labeled FaDu cells (14 mice, 26 nodes). Ten photoacoustic images acquired with optical wavelengths spanning from 680 to 860 nm were spectrally unmixed by using a linear least-squares method to obtain sPA images. After imaging, histologic analysis enabled confirmation of the presence of micrometastases. Generalized estimating equations were used to compare metastatic and normal lymph nodes, with a P value of .05 taken to indicate a significant difference. Sensitivity and specificity were determined with a receiver operator characteristic curve constructed from the background-subtracted SO2 values. Results Metastatic lymph nodes (n = 7) exhibited a significantly (P = .018) lower spatially averaged background-subtracted SO2 (mean, 5.4% ± 3.5 [standard error]) when compared with lymph nodes without metastases (mean, 13.7% ± 1.3; n = 24). This effect was observed throughout the entire volume of the nodes rather than being limited to the metastatic foci. The change in SO2, which was inversely related to the size of the metastasis, was detectable in metastases as small as 2.6 × 10−3 mm3. Conclusion The results show that US-guided sPA imaging is capable of depicting changes in SO2 in lymph nodes that were correlated with metastatic invasion. © RSNA, 2015 PMID:25997030

  7. Enhancing figure-of-merit of n-type Bi2Te3-xSex

    NASA Astrophysics Data System (ADS)

    Yan, Xiao; Yang, Jian; Ma, Yi; Poudel, Bed; Lan, Yucheng; Wang, Dezhi; Ren, Zhifeng; Hao, Qing; Chen, Gang

    2008-03-01

    Themoelectric materials with high dimensionless figure-of-merit (ZT) are greatly demanded in energy industry, among which bismuth telluride (Bi2Te3) exhibits decent ZT around room temperature. However, thermal conductivity of Bi2Te3 is still high which limits its wider use for low temperature cooling devices. Here we investigate nanostructured bulk n-type Bi2Te3-xSex by reducing the thermal conductivity via increased phonon scattering of the significantly increased grain boundaries due to nano size grains. We first make alloyed nanopowders by mechanical alloying a mixture of elements with the right ratio and then 100% nanostructured samples by hot press.

  8. Thermoelectric Properties Studies on n-type Bi2Te3-xSex

    NASA Astrophysics Data System (ADS)

    Yang, Jian; Yan, Xiao; Ma, Yi; Poudel, Bed; Lan, Yucheng; Wang, D. Z.; Ren, Z. F.; Hao, Q.; Chen, G.

    2008-03-01

    Bi2Te3-xSex is a classic room temperature n-type thermoelectric material. In spite of the long history of research, its ZT is still below 1. By directly making nano sized particles using mechanical alloy from element, then pressing the nanoparticles into 100% dense bulk sample with nano-structures by hot press, we expect to decrease the thermal conductivity by the increased grain boundary scattering of phonons so to improve the ZT above 1. The ratio of Te/Se was varied systematically to investigate its effect on thermal conductivity.

  9. Thermochemical Properties and Bond Dissociation Energies for Fluorinated Methanol, CH3-xFxOH, and Fluorinated Methyl Hydroperoxides, CH3-xFxOOH: Group Additivity.

    PubMed

    Wang, Heng; Bozzelli, Joseph W

    2016-09-08

    Oxygenated fluorocarbons are routinely found in sampling of environmental soils and waters as a result of the widespread use of fluoro and chlorofluoro carbons as heat transfer fluids, inert materials, polymers, fire retardants and solvents; the influence of these chemicals on the environment is a growing concern. The thermochemical properties of these species are needed for understanding their stability and reactions in the environment and in thermal process. Structures and thermochemical properties on the mono- to trifluoromethanol, CH3-xFxOH, and fluoromethyl hydroperoxide, CH3-xFxOOH (1 ≤ x ≤ 3), are determined by CBS-QB3, CBS-APNO, and G4 calculations. Entropy, S°298, and heat capacities, Cp(T)'s (300 ≤ T/K ≤ 1500) from vibration, translation, and external rotation contributions are calculated on the basis of the vibration frequencies and structures obtained from the B3LYP/6-31+G(d,p) density functional method. Potential barriers for the internal rotations are also calculated from this method and used to calculate hindered rotor contributions to S°298 and Cp(T)'s using direct integration over energy levels of the internal rotational potentials. Standard enthalpies of formation, ΔfH°298 (units in kcal mol(-1)) are CH2FOOH (-83.7), CHF2OOH (-138.1), CF3OOH (-193.6), CH2FOO(•) (-44.9), CHF2OO(•) (-99.6), CF3OO(•) (-153.8), CH2FOH (-101.9), CHF2OH (-161.6), CF3OH (-218.1), CH2FO(•) (-49.1), CHF2O(•) (-97.8), CF3O(•) (-150.5), CH2F(•) (-7.6), CHF2(•) (-58.8), and CF3(•) (-112.6). Bond dissociation energies for the R-OOH, RO-OH, ROO-H, R-OO(•), RO-O(•), R-OH, RO-H, R-O(•), and R-H bonds are determined and compared with methyl hydroperoxide to observe the trends from added fluoro substitutions. Enthalpy of formation for the fluoro-hydrocarbon oxygen groups C/F/H2/O, C/F2/H/O, C/F3/O, are derived from the above fluorinated methanol and fluorinated hydroperoxide species for use in Benson's Group Additivity. It was determined that

  10. Sub-180 nm generation with borate crystal

    NASA Astrophysics Data System (ADS)

    Qu, Chen; Yoshimura, Masashi; Tsunoda, Jun; Kaneda, Yushi; Imade, Mamoru; Sasaki, Takatomo; Mori, Yusuke

    2014-10-01

    We demonstrated a new scheme for the generation of 179 nm vacuum-ultraviolet (VUV) light with an all-solid-state laser system. It was achieved by mixing the deep-ultraviolet (DUV) of 198.8 nm and the infrared (IR) of 1799.9 nm. While CsB3O5 (CBO) did not satisfy the phase-matching at around 180 nm, 179 nm output was generated with LiB3O5 (LBO) for the first time. The phase-matching property of LBO at around 180 nm was also investigated. There was small deviation from theoretical curve in the measurement, which is still considered reasonable.

  11. A logistic regression model for predicting axillary lymph node metastases in early breast carcinoma patients.

    PubMed

    Xie, Fei; Yang, Houpu; Wang, Shu; Zhou, Bo; Tong, Fuzhong; Yang, Deqi; Zhang, Jiaqing

    2012-01-01

    Nodal staging in breast cancer is a key predictor of prognosis. This paper presents the results of potential clinicopathological predictors of axillary lymph node involvement and develops an efficient prediction model to assist in predicting axillary lymph node metastases. Seventy patients with primary early breast cancer who underwent axillary dissection were evaluated. Univariate and multivariate logistic regression were performed to evaluate the association between clinicopathological factors and lymph node metastatic status. A logistic regression predictive model was built from 50 randomly selected patients; the model was also applied to the remaining 20 patients to assess its validity. Univariate analysis showed a significant relationship between lymph node involvement and absence of nm-23 (p = 0.010) and Kiss-1 (p = 0.001) expression. Absence of Kiss-1 remained significantly associated with positive axillary node status in the multivariate analysis (p = 0.018). Seven clinicopathological factors were involved in the multivariate logistic regression model: menopausal status, tumor size, ER, PR, HER2, nm-23 and Kiss-1. The model was accurate and discriminating, with an area under the receiver operating characteristic curve of 0.702 when applied to the validation group. Moreover, there is a need discover more specific candidate proteins and molecular biology tools to select more variables which should improve predictive accuracy.

  12. A Logistic Regression Model for Predicting Axillary Lymph Node Metastases in Early Breast Carcinoma Patients

    PubMed Central

    Xie, Fei; Yang, Houpu; Wang, Shu; Zhou, Bo; Tong, Fuzhong; Yang, Deqi; Zhang, Jiaqing

    2012-01-01

    Nodal staging in breast cancer is a key predictor of prognosis. This paper presents the results of potential clinicopathological predictors of axillary lymph node involvement and develops an efficient prediction model to assist in predicting axillary lymph node metastases. Seventy patients with primary early breast cancer who underwent axillary dissection were evaluated. Univariate and multivariate logistic regression were performed to evaluate the association between clinicopathological factors and lymph node metastatic status. A logistic regression predictive model was built from 50 randomly selected patients; the model was also applied to the remaining 20 patients to assess its validity. Univariate analysis showed a significant relationship between lymph node involvement and absence of nm-23 (p = 0.010) and Kiss-1 (p = 0.001) expression. Absence of Kiss-1 remained significantly associated with positive axillary node status in the multivariate analysis (p = 0.018). Seven clinicopathological factors were involved in the multivariate logistic regression model: menopausal status, tumor size, ER, PR, HER2, nm-23 and Kiss-1. The model was accurate and discriminating, with an area under the receiver operating characteristic curve of 0.702 when applied to the validation group. Moreover, there is a need discover more specific candidate proteins and molecular biology tools to select more variables which should improve predictive accuracy. PMID:23012578

  13. Sentinel lymph nodes detection with an imaging system using Patent Blue V dye as fluorescent tracer

    NASA Astrophysics Data System (ADS)

    Tellier, F.; Steibel, J.; Chabrier, R.; Rodier, J. F.; Pourroy, G.; Poulet, P.

    2013-03-01

    Sentinel lymph node biopsy is the gold standard to detect metastatic invasion from primary breast cancer. This method can help patients avoid full axillary chain dissection, thereby decreasing the risk of morbidity. We propose an alternative to the traditional isotopic method, to detect and map the sentinel lymph nodes. Indeed, Patent Blue V is the most widely used dye in clinical routine for the visual detection of sentinel lymph nodes. A Recent study has shown the possibility of increasing the fluorescence quantum yield of Patent Blue V, when it is bound to human serum albumin. In this study we present a preclinical fluorescence imaging system to detect sentinel lymph nodes labeled with this fluorescent tracer. The setup is composed of a black and white CCD camera and two laser sources. One excitation source with a laser emitting at 635 nm and a second laser at 785 nm to illuminate the region of interest. The prototype is operated via a laptop. Preliminary experiments permitted to determine the device sensitivity in the μmol.L-1 range as regards the detection of PBV fluorescence signals. We also present a preclinical evaluation performed on Lewis rats, during which the fluorescence imaging setup detected the accumulation and fixation of the fluorescent dye on different nodes through the skin.

  14. Coexistence of Two Electronic Nano-Phases on a CH3NH3PbI3-xClx Surface Observed in STM Measurements.

    PubMed

    Yost, Andrew J; Pimachev, Artem; Ho, Chun-Chih; Darling, Seth B; Wang, Leeyih; Su, Wei-Fang; Dahnovsky, Yuri; Chien, TeYu

    2016-10-10

    Scanning tunneling microscopy is utilized to investigate the local density of states of a CH3NH3PbI3-xClx perovskite in cross-sectional geometry. Two electronic phases, 10-20 nm in size, with different electronic properties inside the CH3NH3PbI3-xClx perovskite layer are observed by the dI/dV mapping and point spectra. A power law dependence of the dI/dV point spectra is revealed. In addition, the distinct electronic phases are found to have preferential orientations close to the normal direction of the film surface. Density functional theory calculations indicate that the observed electronic phases are associated with local deviation of I/Cl ratio, rather than different orientations of the electric dipole moments in the ferroelectric phases. By comparing the calculated results with experimental data we conclude that phase A (lower contrast in dI/dV mapping at -2.0 V bias) contains a lower I/Cl ratio than that in phase B (higher contrast in dI/dV).

  15. Origin of the low grain boundary conductivity in lithium ion conducting perovskites: Li3xLa0.67-xTiO3.

    PubMed

    Wu, Jian-Fang; Guo, Xin

    2017-02-22

    Although the bulk conductivity of lithium ion conducting Li3xLa0.67-xTiO3 electrolytes reaches the level of 10(-3) S cm(-1), the grain boundary conductivity is orders of magnitude lower; the origin of the low grain boundary conductivity should be thoroughly understood as a prerequisite to improve the overall conductivity. Samples with grain sizes ranging from 25 nm to 3.11 μm were prepared. According to SEM and TEM investigations, the grain boundaries are free of any second phase; however, the grain boundary conductivity is still ∼4 orders of magnitude lower than the bulk conductivity. The grain boundary conductivity decreases with decreasing grain size, indicating that the low grain boundary conductivity is not dominated only by the crystallographic grain boundary. Since electrons are attracted to the grain boundaries, as reflected by the dramatically enhanced grain boundary conductivity when electrons are introduced, the grain boundary core in Li3xLa0.67-xTiO3 should be positively charged, causing the depletion of lithium ions in the adjacent space-charge layers. The very low grain boundary conductivity can be accounted for by the lithium ion depletion in the space-charge layer.

  16. 7-nm e-beam resist sensitivity characterization

    NASA Astrophysics Data System (ADS)

    Zweber, Amy; Toda, Yusuke; Sakamoto, Yoshifumi; Faure, Thomas; Rankin, Jed; Nash, Steven; Kagawa, Masayuki; Fahrenkopf, Michael; Isogawa, Takeshi; Wistrom, Richard

    2016-10-01

    Over time mask makers have been driven to low sensitivity e-beam resist materials to meet lithographic patterning needs. For 7-nm logic node, resolution enhancement techniques continue to evolve bringing more complexity on mask and additional mask builds per layer. As demonstrated in literature, low sensitivity materials are needed for low line edge roughness (LER) but impact write tool through put. In characterizing resist sensitivity for 7-nm, we explore more broadly what advantages and disadvantages moving to lower sensitivity resist materials brings, where LER, critical dimension uniformity, resolution, fogging, image placement, and write time results and trends are presented. In this paper, resist material performance are reported for sensitivities ranging from 20 to 130 μC/cm2 at 50% proximity effect correction, where the exposure will be using a single beam platform. Materials examined include negative tone resist types with chemical amplification and positive tone without chemical amplification focusing on overall trends for 7-nm e-beam resist performance.

  17. Locoregional treatment of low-grade B-cell lymphoma with CD3xCD19 bispecific antibodies and CD28 costimulation. II. Assessment of cellular immune responses.

    PubMed

    Manzke, O; Tesch, H; Lorenzen, J; Diehl, V; Bohlen, H

    2001-02-15

    Ten patients with advanced B-cell lymphoma were treated with a single locoregional injection of CD3xCD19 bispecific and costimulating CD28 monospecific antibodies to activate tumor-infiltrating T-lymphocytes. Antibodies were administered at 4 different dose levels (30 microg, 270 microg, 810 microg, 1,600 microg of each antibody) either by intratumoral or intralymphatic injection. Most patients developed responses within different compartments of the immune systems (T cells, NK cells) subsequent to the antibody application. Comparative studies in 2 patients of which treated as well as untreated lymph nodes were available revealed the up-regulation of T-cell activation markers induced by the antibody injection. Additionally, in 1 patient the induction of apoptosis of lymphoma B cells in the antibody-treated lymph node was observed. Specificity analyses of peripheral blood T cells by means of IFN-gamma ELISpot measurement indicated the recruitment of idiotype-specific T cells, as in 1 out of 3 investigated patients an increased T-cell response toward autologous idiotype peptides could be demonstrated. We conclude that a single injection of CD3xCD19 bispecific antibodies is capable to induce an activation of autologous T lymphocytes if simultaneous costimulatory signaling by CD28 antibodies is provided. Furthermore, our data suggest that at least in some patients lymphoma-specific T cells can be recruited by this immunotherapeutic approach toward B-cell lymphoma.

  18. SiO2 coating effects in the magnetic anisotropy of Fe3-xO4 nanoparticles suitable for bio-applications.

    PubMed

    Figueroa, A I; Moya, C; Bartolomé, J; Bartolomé, F; García, L M; Pérez, N; Labarta, A; Batlle, X

    2013-04-19

    We present radio frequency transverse susceptibility (TS) measurements on oleic acid-coated and SiO2-coated Fe3-xO4 magnetite nanoparticles. The effects of the type of coating on the interparticle interactions and magnetic anisotropy are evaluated for two different particle sizes in powder samples. On the one hand, SiO2 coating reduces the interparticle interactions as compared to oleic acid coating, the reduction being more effective for 5 nm than for 14 nm diameter particles. On the other hand, the magnetic anisotropy field at low temperature is lower than 1 kOe in all cases and independent of the coating used. Our results are relevant concerning applications in biomedicine, since the SiO2 coating renders 5 and 14 nm hydrophilic particles with very limited agglomeration, low anisotropy, and superparamagnetic behavior at room temperature. The TS technique also allows us to discriminate the influence on the anisotropy field of interparticle interactions from that of the thermal fluctuations.

  19. Transport optimization considering the node aggregation ability

    NASA Astrophysics Data System (ADS)

    Liu, Gang; Li, Lian; Guo, Jiawei; Li, Zheng

    2015-10-01

    Using the theories of complex networks and gravitational field, we study the dynamic routing process under the framework of node gravitational field, define the equation of gravitation of travel path to data package and introduce two parameters α and γ for adjusting the dependences of transmission data on the unblocked degree of node, the transmission capacity of node and the path length. Based on the path's attraction, a gravitational field routing strategy under node connection ability constraint is proposed with considering the affect of node aggregation ability to transport process, and a parameter is used to adjust the control strength of routing process to node aggregation ability. In order to clarify the efficiency of suggested method, we introduce an order parameter η to measure the throughput of the network by the critical value of phase transition from free state to congestion state, and analyze the distribution of betweenness centrality and traffic jam. Simulation results show that, compared with the traditional shortest path routing strategy, our method greatly improve the throughput of a network, balance the network traffic load and most of the network nodes are used efficiently. Moreover, the network throughput is maximized under μ = -1, and the transmission performance of the algorithm is independent of the values of α and γ, which indicate the routing strategy is stable and reliable.

  20. Node Immunization with Time-Sensitive Restrictions

    PubMed Central

    Cui, Wen; Gong, Xiaoqing; Liu, Chen; Xu, Dan; Chen, Xiaojiang; Fang, Dingyi; Tang, Shaojie; Wu, Fan; Chen, Guihai

    2016-01-01

    When we encounter a malicious rumor or an infectious disease outbreak, immunizing k nodes of the relevant network with limited resources is always treated as an extremely effective method. The key challenge is how we can insulate limited nodes to minimize the propagation of those contagious things. In previous works, the best k immunised nodes are selected by learning the initial status of nodes and their strategies even if there is no feedback in the propagation process, which eventually leads to ineffective performance of their solutions. In this paper, we design a novel vaccines placement strategy for protecting much more healthy nodes from being infected by infectious nodes. The main idea of our solution is that we are not only utilizing the status of changing nodes as auxiliary knowledge to adjust our scheme, but also comparing the performance of vaccines in various transmission slots. Thus, our solution has a better chance to get more benefit from these limited vaccines. Extensive experiments have been conducted on several real-world data sets and the results have shown that our algorithm has a better performance than previous works. PMID:27983680

  1. Symmetric 3 x 3 coupler-based demodulator for fiber optic interferometric sensors

    NASA Astrophysics Data System (ADS)

    Brown, David A.; Cameron, C. B.; Keolian, Robert M.; Gardner, David L.; Garrett, Steven L.

    1991-12-01

    A method for demodulation of fiber optic interferometric sensors that utilizes a 3 X 3 coupler is described. The passive demodulation scheme does not require carrier (phase) modulation. The demodulation scheme relies on the three outputs of a 3 X 3 coupler and uses all three of its phase modulated output signals to recreate the stimulus inducing the original optical phase modulation. The demodulator scale factor (volts/radian) is stable against fluctuations in both fringe visibility and average received power. Upon initial implementation of the scheme, a dynamic range of 116 dB was obtained (at 600 Hz in a 1 Hz bandwidth with maximum THD at 4%). The minimum detectable signal at 600 Hz was 220 (mu) rad/(root)Hz and the maximum tolerable signal was 140 radians. Both the maximum tolerable signal and the minimum detectable signal (noise floor) was observed to increase with decreasing frequency. Thus, depending on the frequency, the demodulation scheme is capable of detecting phase signals less than a milliradian to in excess of kiloradians.

  2. Intracerebroventricular streptozotocin exacerbates Alzheimer-like changes of 3xTg-AD mice.

    PubMed

    Chen, Yanxing; Liang, Zhihou; Tian, Zhu; Blanchard, Julie; Dai, Chun-Ling; Chalbot, Sonia; Iqbal, Khalid; Liu, Fei; Gong, Cheng-Xin

    2014-02-01

    Alzheimer's disease (AD) involves several possible molecular mechanisms, including impaired brain insulin signaling and glucose metabolism. To investigate the role of metabolic insults in AD, we injected streptozotocin (STZ), a diabetogenic compound if used in the periphery, into the lateral ventricle of the 6-month-old 3xTg-AD mice and studied the cognitive function as well as AD-like brain abnormalities, such as tau phosphorylation and Aβ accumulation, 3-6 weeks later. We found that STZ exacerbated impairment of short-term and spatial reference memory in 3xTg-AD mice. We also observed an increase in tau hyperphosphorylation and neuroinflammation, a disturbance of brain insulin signaling, and a decrease in synaptic plasticity and amyloid β peptides in the brain after STZ treatment. The expression of 20 AD-related genes, including those involved in the processing of amyloid precursor protein, cytoskeleton, glucose metabolism, insulin signaling, synaptic function, protein kinases, and apoptosis, was altered, suggesting that STZ disturbs multiple metabolic and cell signaling pathways in the brain. These findings provide experimental evidence of the role of metabolic insult in AD.

  3. Structural and magnetic properties of ZnxMn3-xO4 spinels

    NASA Astrophysics Data System (ADS)

    Nádherný, Ladislav; Maryško, Miroslav; Sedmidubský, David; Martin, Christine

    2016-09-01

    To study structural and magnetic properties of spinels a series of ceramic samples with a different Zn:Mn ratio was prepared by high-temperature annealing in air followed by quenching in liquid nitrogen. The spinels with nominal composition of ZnxMn3-xO4 (x=0-1.29) were characterized by means of X-ray diffraction, Raman spectroscopy, scanning electron microscopy and SQUID magnetometry. Two tetragonal spinels of the same I41/amd space-group were identified based on the crystallographic, vibrational and grain-morphology point of view and described in detail. The unit-cell parameters and phase ratio of the spinel phases were determined using Rietveld refinement. According to the factor-group analysis the majority of the vibrational modes were identified in the Raman spectra. The magnetic properties of ZnxMn3-xO4 spinels are in agreement with a model of nanoscale ferrimagnetic Mn3O4 clusters in the antiferromagnetic ZnMn2O4 matrix (TN≈60 K). New features are a constricted hysteresis loop for x=0.3, and the effect of defects on magnetic properties for high Zn content which points to a good quality of the samples prepared by a solid state reaction.

  4. Fabrication and properties of Bi2S3-xSex thermoelectric polycrystals

    NASA Astrophysics Data System (ADS)

    Zhang, Li-Juan; Zhang, Bo-Ping; Ge, Zhen-Hua; Han, Cheng-Gong

    2013-05-01

    Bi2S3-x Sex (x=0-0.3) polycrystals were fabricated by mechanical alloying (MA) and spark plasma sintering (SPS). The phase, microstructure, electrical and thermal transport properties were investigated with a special emphasis on the influence of Se content. All the samples were indexed as single phase with an orthorhombic symmetry. Optimizing the Se content greatly improves the electrical conductivity, achieving a peak value of 750 Sm-1 at 573 K for the Bi2S2.85Se0.15 composition. The absolute value of Seebeck coefficient shows an inversely varying trend to the electrical conductivity with Se content, whereby a power factor at 573 K is enhanced from 91 µ Wm-1 K-2 for pristine Bi2S3 to 124 µ Wm-1 K-2 for Bi2S2.85Se0.15. The thermal conductivity of Bi2S3-xSex ranges from 0.44 to 0.73 Wm-1 K-1 at the temperature from 323 to 573 K. A maximum ZT value reached 0.16 at 573 K for the Bi2S2.8Se0.15 sample, which is about 1.6 times that (0.11) of the pristine Bi2S3 sample.

  5. Wafer topography modeling for ionic implantation mask correction dedicated to 2x nm FDSOI technologies

    NASA Astrophysics Data System (ADS)

    Michel, Jean-Christophe; Le Denmat, Jean-Christophe; Sungauer, Elodie; Robert, Frédéric; Yesilada, Emek; Armeanu, Ana-Maria; Entradas, Jorge; Sturtevant, John L.; Do, Thuy; Granik, Yuri

    2013-04-01

    Reflection by wafer topography and underlying layers during optical lithography can cause unwanted exposure in the resist [1]. This wafer stack effect phenomenon which is neglected for larger nodes than 45nm, is becoming problematic for 32nm technology node and below at the ionic implantation process. This phenomenon is expected to be attenuated by the use of anti-reflecting coating but increases process complexity and adds cost and cycle time penalty. As a consequence, an OPC based solution is today under evaluation to cope with stack effects involved in ionic implantation patterning [2] [3]. For the source drain (SD) ionic implantation process step on 28nm Fully Depleted Silicon-on-Insulator (FDSOI) technology, active silicon areas, poly silicon patterns, Shallow Trench Isolation (STI), Silicon-on-Insulator (SOI) areas and the transitions between these different regions result in significant SD implant pattern critical dimension variations. The large number of stack variations involved in these effects implies a complex modeling to simulate pattern degradations. This paper deals with the characterization of stack effects on 28nm node using SOI substrates. The large number of measurements allows to highlight all individual and combined stack effects. A new modeling flow has been developed in order to generate wafer stack aware OPC model. The accuracy and the prediction of the model is presented in this paper.

  6. Inguinal Lymph Node Anthracosis: A Case Report

    PubMed Central

    Soto, Carlos Alberto

    2016-01-01

    Summary: Anthracosis is defined as black, dense pigments in tissues, usually carbon deposits. We, as surgeons, have to make decisions during surgery to the best of our knowledge and based on what the literature provides us. We present the case of a 30-year-old female patient who underwent abdominoplasty. During surgery, bilateral inguinal pigmented and enlarged lymph nodes were seen. Biopsy of the nodes was done to rule out any malignancy. The results showed tattoo pigments on all lymph nodes. We present this case as tattoo pigment migration, which has been rarely described. PMID:27536493

  7. Checkpointing for a hybrid computing node

    DOEpatents

    Cher, Chen-Yong

    2016-03-08

    According to an aspect, a method for checkpointing in a hybrid computing node includes executing a task in a processing accelerator of the hybrid computing node. A checkpoint is created in a local memory of the processing accelerator. The checkpoint includes state data to restart execution of the task in the processing accelerator upon a restart operation. Execution of the task is resumed in the processing accelerator after creating the checkpoint. The state data of the checkpoint are transferred from the processing accelerator to a main processor of the hybrid computing node while the processing accelerator is executing the task.

  8. Photoluminescence properties and thermal stability of blue-emitting Ba5 - xCl(PO4)3:xEu2 + (0.004 ≤ x ≤ 0.016) phosphors

    NASA Astrophysics Data System (ADS)

    Liu, Jie; Zhang, Zhi-Ming; Wu, Zhan-Chao; Wang, Fang-Fang; Li, Zhen-Jiang; Kuang, Shao-Ping; Wu, Ming-Mei

    2017-01-01

    A series of blue-emitting Ba5 - xCl(PO4)3:xEu2 + (0.004 ≤ x ≤ 0.016) phosphors were synthesized by conventional high-temperature solid state reaction. The structure and photoluminescence (PL) properties of the phosphors were investigated. The as-prepared phosphors exhibit broad excitation band ranging from 250 to 420 nm, and strong asymmetric blue emission band peaking at 436 nm. The optimum concentration of Eu2 + in the Ba5Cl(PO4)3:Eu2 + phosphor is x = 0.01, and the concentration quenching mechanism is verified to be the combined actions of dipole-dipole interaction and radiation re-absorption mechanism. The thermal stability of Ba5Cl(PO4)3:Eu2 + was evaluated by temperature-dependent PL spectra. Compared with that of commercial BaMgAl10O17:Eu2 + (BAM) phosphor, the Ba5 - xCl(PO4)3:xEu2 + phosphors exhibit similarly excellent thermal quenching property. In addition, the CIE chromaticity coordinates of Ba5 - xCl(PO4)3:xEu2 + (0.004 ≤ x ≤ 0.016) were calculated to evaluate the color quality. All the results indicate that Ba5Cl(PO4)3:Eu2 + is a promising candidate phosphor for near-ultraviolet (n-UV) pumped LED.

  9. Optimization of MSB for future technology nodes

    NASA Astrophysics Data System (ADS)

    Doering, Hans-Joachim; Elster, Thomas; Klein, Matthias; Heinitz, Joachim; Schneider, Marc; Weidenmüller, Ulf; Slodowski, Matthias; Stolberg, Ines A.; Dorl, Wolfgang

    2012-03-01

    In the ITRS roadmap [1] increasingly long mask write and cycle time is explicitly addressed as a difficult challenge in mask fabrication for the 16nm technology node and beyond. Write time reduction demands have to be seen in relation to corresponding performance parameters like Line Width Roughness (LWR), resolution, placement as well as CD Uniformity. The previously presented Multi Shaped Beam (MSB) approach [2, 3] is considered a potential solution for high throughput mask write application. In order to fully adapt the MSB concept to future industry's requirements specific optimizations are planned. The key element for achieving write time reduction is a higher probe current at the target, which can be obtained by increasing the number of beamlets as well as applying a higher current density. In the present paper the approach of a 256 beamlet MSB design will be discussed. For a given image field size along with a beamlet number increase both beamlet pitch and size have to be optimized. Out of previous investigations, one finding was that by changing the demagnification after the beam forming section of the MSB column the overall performance can be optimized. Based on first electron-optical simulations for a new final lens a larger demagnification turned out to be advantageous. Stochastic beam blur simulation results for the MSB reduction optics will be presented. During the exposure of a pattern layout the number of used beams, their shape and their distribution within the image field varies, which can lead to space charge distortion effects. In regard to this MSB simulation results obtained for an image field of approximately 10x10ìm² will be presented. For the 256 beamlet MSB design and resist sensitivities of 20μC/cm2, 40μC/cm2 and 100μC/cm2 write time and LWR simulations have been performed. For MSB pattern data fracturing an optimized algorithm has been used, which increased the beamlet utilization factor (indicates the mean number of beamlets which

  10. Surgery and sentinel lymph node biopsy.

    PubMed

    Faries, Mark B; Morton, Donald L

    2007-12-01

    In patients with melanoma, surgery is pivotal not only for the primary tumor but also for regional and often distant metastases. The minimally invasive technique of sentinel node (SN) biopsy has become standard for detection of occult regional node metastasis in patients with intermediate-thickness primary melanoma; in these patients it has a central role in determining prognosis and a significant impact on survival when biopsy results are positive. Its role in thin melanoma remains under evaluation. The regional tumor-draining SN also is a useful model for studies of melanoma-induced immunosuppression. Although completion lymphadenectomy remains the standard of care for patients with SN metastasis, results of ongoing phase III trials will indicate whether SN biopsy without further lymph node surgery is adequate therapy for certain patients with minimal regional node disease.

  11. Percutaneous Vertebroplasty in Painful Schmorl Nodes

    SciTech Connect

    Masala, Salvatore Pipitone, Vincenzo; Tomassini, Marco; Massari, Francesco; Romagnoli, Andrea; Simonetti, Giovanni

    2006-02-15

    The Schmorl node represents displacement of intervertebral disc tissue into the vertebral body. Both Schmorl nodes and degenerative disc disease are common in the human spine. We performed a retrospective study, for the period from January 2003 to February 2005, evaluating 23 patients affected by painful Schmorl nodes, who underwent in our department percutaneous transpedicular injection of polymethylmethacrylate (vertebroplasty) in order to solve their back pain not responsive to medical and physical management. Eighteen patients reported improvement of the back pain and no one reported a worsening of symptoms. Improvement was swift and persistent in reducing symptoms. Painful Schmorl nodes, refractory to medical or physical therapy, should be considered as a new indication within those vertebral lesions adequately treatable utilizing Vertebroplasty procedure.

  12. The SEMATECH Berkeley MET pushing EUV development beyond 22nm half pitch

    NASA Astrophysics Data System (ADS)

    Naulleau, Patrick; Anderson, Christopher N.; Baclea-an, Lorie-Mae; Chan, David; Denham, Paul; George, Simi; Goldberg, Kenneth A.; Hoef, Brian; Jones, Gideon; Koh, Chawon; La Fontaine, Bruno; McClinton, Brittany; Miyakawa, Ryan; Montgomery, Warren; Rekawa, Seno; Wallow, Tom

    2010-04-01

    Microfield exposure tools (METs) play a crucial role in the development of extreme ultraviolet (EUV) resists and masks. One of these tools is the SEMATECH Berkeley 0.3 numerical aperture (NA) MET. Using conventional illumination this tool is limited to approximately 22-nm half pitch resolution. However, resolution enhancement techniques have been used to push the patterning capabilities of this tool to half pitches of 18 nm and below. This resolution was achieved in a new imageable hardmask which also supports contact printing down to 22 nm with conventional illumination. Along with resolution, line-edge roughness is another crucial hurdle facing EUV resists. Much of the resist LER, however, can be attributed to the mask. We have shown that intenssionally aggressive mask cleaning on an older generation mask causes correlated LER in photoresist to increase from 3.4 nm to 4.0 nm. We have also shown that new generation EUV masks (100 pm of substrate roughness) can achieve correlated LER values of 1.1 nm, a 3× improvement over the correlated LER of older generation EUV masks (230 pm of substrate roughness). Finally, a 0.5-NA MET has been proposed that will address the needs of EUV development at the 16-nm node and beyond. The tool will support an ultimate resolution of 8 nm half-pitch and generalized printing using conventional illumination down to 12 nm half pitch.

  13. Synchronizing compute node time bases in a parallel computer

    DOEpatents

    Chen, Dong; Faraj, Daniel A; Gooding, Thomas M; Heidelberger, Philip

    2014-12-30

    Synchronizing time bases in a parallel computer that includes compute nodes organized for data communications in a tree network, where one compute node is designated as a root, and, for each compute node: calculating data transmission latency from the root to the compute node; configuring a thread as a pulse waiter; initializing a wakeup unit; and performing a local barrier operation; upon each node completing the local barrier operation, entering, by all compute nodes, a global barrier operation; upon all nodes entering the global barrier operation, sending, to all the compute nodes, a pulse signal; and for each compute node upon receiving the pulse signal: waking, by the wakeup unit, the pulse waiter; setting a time base for the compute node equal to the data transmission latency between the root node and the compute node; and exiting the global barrier operation.

  14. Synchronizing compute node time bases in a parallel computer

    DOEpatents

    Chen, Dong; Faraj, Daniel A; Gooding, Thomas M; Heidelberger, Philip

    2015-01-27

    Synchronizing time bases in a parallel computer that includes compute nodes organized for data communications in a tree network, where one compute node is designated as a root, and, for each compute node: calculating data transmission latency from the root to the compute node; configuring a thread as a pulse waiter; initializing a wakeup unit; and performing a local barrier operation; upon each node completing the local barrier operation, entering, by all compute nodes, a global barrier operation; upon all nodes entering the global barrier operation, sending, to all the compute nodes, a pulse signal; and for each compute node upon receiving the pulse signal: waking, by the wakeup unit, the pulse waiter; setting a time base for the compute node equal to the data transmission latency between the root node and the compute node; and exiting the global barrier operation.

  15. Modulation of electronic and optical properties in mixed halide perovskites CsPbCl3xBr3(1-x) and CsPbBr3xI3(1-x)

    NASA Astrophysics Data System (ADS)

    Zhou, Ziqi; Cui, Yu; Deng, Hui-Xiong; Huang, Le; Wei, Zhongming; Li, Jingbo

    2017-03-01

    The recent discovery of lead halide perovskites with band gaps in the visible presents important potential in the design of high efficient solar cells. CsPbCl3, CsPbBr3 and CsPbI3 are stable compounds within this new family of semiconductors. By performing the first-principles calculation, we explore the structural, electronic and optical properties of CsPbCl3xBr3(1-x) and CsPbBr3xI3(1-x) with various compositions of halide atoms. Structural stability is demonstrated with halide atoms distributing randomly at the halide atomic sites. CsPbCl3xBr3(1-x) and CsPbBr3xI3(1-x) exhibit the modulation of their band gaps by varying the halide composition. Our results also indicate that CsPbCl3xBr3(1-x) and CsPbBr3xI3(1-x) with different halide compositions are suitable to application to solar cells for the general features are well preserved. Good absorption to lights of different wavelengths has been obtained in these mixed halide perovskites.

  16. Measurement of the conductance of the sodium channel from current fluctuations at the node of Ranvier.

    PubMed Central

    Conti, F; Hille, B; Neumcke, B; Nonner, W; Stämpfli, R

    1976-01-01

    Single myelinated nerve fibres of Rana esculenta were investigated under voltage clamp conditions at 13 degrees C. Fluctuations of steady-state membrane current were measured during the last 152 msec of 190-225 msec pulses depolarizing the membrane by 8-48 mV. Noise power spectral densities were calculated in the frequency range of 6-6-6757 Hz. 2. External application of 150 nM tetrodotoxin (TTX) and/or 10 mM tetraethylammonium (TEA) ion reduced the current fluctuations. The difference of current noise spectra measured in the presence and absence of TTX (TEA) was not changed by the presence of TEA (TTX) during both measurements, and was taken as the spectrum of the Na (K) current fluctuations. 3. Residual current noise during application of both TTX and TEA was, except for some excess noise at the low and high frequency ends of the spectrum, similar to the noise measured from a passive nerve model and could be understood in terms of Nyquist noise of the known resistances and the amplifier noise. 4. Na current fluctuation spectra were interpreted as the sum N/f+SNa(f) where SNa(F) represents the spectrum expected for a set of equal, independent Na channels with only two conductance states (open or closed) which follow Hodgkin-Huxley kinetics. With values of hinfinity, tauh and minfinity measured from macroscopic Na currents, the measured spectra were fitted well by optimizing N, SNa(0) and taum. Values of taum obtained by this method were in fair agreement with values found from macroscopic currents. 5. The 1/f component of Na current noise was roughly proportional to the square of the steady-state Na current, I2. The mean value of N/I2 was (1-1 +/- 0-3) X 10(-4). 6. The current carried by a single Na channel was calculated from fitted spectra and steady-state Na currents measured simultaneously with the current fluctuations. The single channel conductance gamma normalized to zero absolute membrane potential was calculated. The average gamma from twelve measurements

  17. International Lunar Network (ILN) Anchor Nodes

    NASA Technical Reports Server (NTRS)

    Cohen, Barbara A.

    2008-01-01

    This slide presentation reviews what we know about the interior and surface of the moon and the need to establish a robotic set of geophysical monitoring stations on the surface of the Moon for the purpose of providing significant scientific value to the exploration of the Moon. The ILN Anchor Nodes will provide the backbone of the network in a way that accomplishes new science and allows other nodes to be flexible contributors to the network.

  18. Synthesis of Embedded Software for Sensor Nodes

    DTIC Science & Technology

    2006-01-01

    the development of the fitness evaluator (i.e., the mapping of candidate solutions into values of the relevant cost function), and of the move... the application input data, and each property stored in a particle’s coordinate. An example of mapping the formatted input to the node representation...sensor nodes for a wireless sensor network application, and appended to the Figure 5: Mapping of

  19. Sentinel Node Biopsy in Early Breast Cancer.

    PubMed

    Basso, Stefano M M; Chiara, Giordano B; Lumachi, Franco

    2016-01-01

    The approach to the axilla is an evolving paradigm, and recognition of the complexity of breast cancer (BC) biology is changing treatment options. The sentinel lymph node biopsy (SLNB) technique is based on the excision and histological examination of the axillary lymph nodes(s), which is assumed to be the first one draining from the primary tumor. SLNB can accurately stage the axilla, and several trials have shown that there are no significant differences in local recurrence and overall survival between patients treated with or without axillary node dissection (ALND) after a negative SLNB. Surgical morbidity was significantly reduced in terms of rates of lymphedema and neuropathy, with reduced hospital stay and better quality of life after the SLNB procedure. ALND can safely be omitted in patients with ≥2 positive nodes who received conservative surgery and radiotherapy, while ALND is still recommended in clinically N1 BCs, in case of ≥3 positive nodes, and when the number of positive nodes would be crucial for the choice of chemotherapy. Micrometastatic disease can be safely managed with SLNB alone, and additional identification of micrometastases with immunohistochemistry does not affect disease-free survival or overall survival. An appropriate management of the axilla is crucial for the outcome of patients with early BC, and SLNB introduction into the clinical practice dramatically changed the surgical treatment, reducing morbidity without decreasing survival. A tailored approach should be suggested in each patient with BC, considering the biology of the tumor rather than nodal involvement.

  20. Cervical lymph node diseases in children

    PubMed Central

    Lang, Stephan; Kansy, Benjamin

    2014-01-01

    The lymph nodes are an essential part of the body’s immune system and as such are affected in many infectious, autoimmune, metabolic and malignant diseases. The cervical lymph nodes are particularly important because they are the first drainage stations for key points of contact with the outside world (mouth/throat/nose/eyes/ears/respiratory system) – a critical aspect especially among children – and can represent an early clinical sign in their exposed position on a child’s slim neck. Involvement of the lymph nodes in multiple conditions is accompanied by a correspondingly large number of available diagnostic procedures. In the interests of time, patient wellbeing and cost, a careful choice of these must be made to permit appropriate treatment. The basis of diagnostic decisions is a detailed anamnesis and clinical examination. Sonography also plays an important role in differential diagnosis of lymph node swelling in children and is useful in answering one of the critical diagnostic questions: is there a suspicion of malignancy? If so, full dissection of the most conspicuous lymph node may be necessary to obtain histological confirmation. Diagnosis and treatment of childhood cervical lymph node disorders present the attending pediatric and ENT physicians with some particular challenges. The spectrum of differential diagnoses and the varying degrees of clinical relevance – from banal infections to malignant diseases – demand a clear and considered approach to the child’s individual clinical presentation. Such an approach is described in the following paper. PMID:25587368

  1. Electronic structures and optical properties of α-Fe2O3-xSex alloys for solar absorber

    NASA Astrophysics Data System (ADS)

    Xia, Congxin; Jia, Yu; Zhang, Qiming

    2015-05-01

    The band structures and optical properties of α-Fe2O3-xSex alloys are studied by means of first-principles methods, considering different Se contents x. Numerical results show that Se content has an obvious influence on band structures and optical properties of α-Fe2O3-xSex alloys. The band gap values of α-Fe2O3-xSex alloys decrease monotonically when Se concentrations increase, resulting in an obvious increase of the optical absorption edge in the visible range. In particular, our results show that α-Fe2O3-xSex alloys have the direct band gap properties with band gap values when Se content x ≈ 0.17, which is beneficial to solar cell applications.

  2. Composition dependence of superconductivity in YBa2(Cu(3-x)Al(x))O(y)

    NASA Technical Reports Server (NTRS)

    Bansal, N. P.

    1993-01-01

    Eleven different compositions in the system YBa2(Cu(3-x)Al(x))O(y) (x = 0 to 0.3) have been synthesized and characterized by electrical resistivity measurements, powder X-ray diffraction, and scanning electron microscopy. The superconducting transition temperature T sub c (onset) was almost unaffected by the presence of alumina due to its limited solubility in YBa2Cu3O(7-x). However, T sub c(R = 0) gradually decreased, and the resistive tails became longer with increasing Al2O3 concentration. This was probably due to formation of BaAl2O4 and other impurity phases from chemical decomposition of the superconducting phase by reaction with Al2O3.

  3. Composition dependence of superconductivity in YBa2(Cu(3-x)Al(x))Oy

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P.

    1991-01-01

    Eleven different compositions in the system YBa2(Cu(3-x)Al(x))O(y) (x = 0 to 0.3) have been synthesized and characterized by electrical resistivity measurements, powder x-ray diffraction, and scanning electron microscopy. The superconducting transition temperature T sub c (onset) was almost unaffected by the presence of alumina due to its limited solubility in YBa2Cu3O(7-x). However, T sub c(R = 0) gradually decreased, and the resistive tails became longer with increasing Al2O3 concentration. This was probably due to formation of BaAl2O4 and other impurity phases from chemical decomposition of the superconducting phase by reaction with Al2O3.

  4. Optimization design of periscope type 3X zoom lens design for a five megapixel cellphone camera

    NASA Astrophysics Data System (ADS)

    Sun, Wen-Shing; Tien, Chuen-Lin; Pan, Jui-Wen; Chao, Yu-Hao; Chu, Pu-Yi

    2016-11-01

    This paper presents a periscope type 3X zoom lenses design for a five megapixel cellphone camera. The configuration of optical system uses the right angle prism in front of the zoom lenses to change the optical path rotated by a 90° angle resulting in the zoom lenses length of 6 mm. The zoom lenses can be embedded in mobile phone with a thickness of 6 mm. The zoom lenses have three groups with six elements. The half field of view is varied from 30° to 10.89°, the effective focal length is adjusted from 3.142 mm to 9.426 mm, and the F-number is changed from 2.8 to 5.13.

  5. Optimization of a 3x3 focusing array for heavy ion drivers

    SciTech Connect

    Martovetsky, N N; Meinke, R B

    2005-08-08

    A heavy ion driver for inertial fusion will accelerate an array of beams through common induction cores and then direct the beams onto the DT target. An array of quadrupole focusing magnets is used to prevent beam expansion from space charge forces. In the array, the magnet fields from the coils embracing the beams are coupled, which reduces the cost of superconductor and increases the focusing power. The challenges in designing such an array are meeting the strict requirements for the quadrupole field inside the beam pipes and preventing stray fields outside. We report our optimization effort on designing such an array and show that 3 x 3 or larger arrays are feasible and practical to build with flat racetrack coils.

  6. Bi2Te3-xSex series studied by resistivity and thermopower

    NASA Astrophysics Data System (ADS)

    Akrap, Ana; Ubaldini, Alberto; Giannini, Enrico; Forró, László

    2014-09-01

    We study the detailed temperature and composition dependence of the resistivity, \\rho(T) , and thermopower, S(T), for a series of layered bismuth chalcogenides Bi2Te3-xSex, and report the stoichiometry dependence of the optical band gap. In the resistivity of the most compensated member, Bi2Te2.1Se0.9, we find a low-temperature plateau whose onset temperature correlates with the high-temperature activation energy. For the whole series S(T) can be described by a simple model for an extrinsic semiconductor. By substituting Se for Te, the Fermi level is tuned from the valence band into the conduction band. The maximum values of S(T), bulk band gap as well the activation energy in the resistivity are found for x \\approx 0.9 .

  7. Dark matter from a classically scale-invariant S U (3 )X

    NASA Astrophysics Data System (ADS)

    Karam, Alexandros; Tamvakis, Kyriakos

    2016-09-01

    In this work we study a classically scale-invariant extension of the Standard Model in which the dark matter and electroweak scales are generated through the Coleman-Weinberg mechanism. The extra S U (3 )X gauge factor gets completely broken by the vacuum expectation values of two scalar triplets. Out of the eight resulting massive vector bosons the three lightest are stable due to an intrinsic Z2×Z2' discrete symmetry and can constitute dark matter candidates. We analyze the phenomenological viability of the predicted multi-Higgs sector imposing theoretical and experimental constraints. We perform a comprehensive analysis of the dark matter predictions of the model solving numerically the set of coupled Boltzmann equations involving all relevant dark matter processes and explore the direct detection prospects of the dark matter candidates.

  8. Signaling completion of a message transfer from an origin compute node to a target compute node

    DOEpatents

    Blocksome, Michael A.; Parker, Jeffrey J.

    2011-05-24

    Signaling completion of a message transfer from an origin node to a target node includes: sending, by an origin DMA engine, an RTS message, the RTS message specifying an application message for transfer to the target node from the origin node; receiving, by the origin DMA engine, a remote get message containing a data descriptor for the message and a completion notification descriptor, the completion notification descriptor specifying a local direct put transfer operation for transferring data locally on the origin node; inserting, by the origin DMA engine in an injection FIFO buffer, the data descriptor followed by the completion notification descriptor; transferring, by the origin DMA engine to the target node, the message in dependence upon the data descriptor; and notifying, by the origin DMA engine, the application that transfer of the message is complete in dependence upon the completion notification descriptor.

  9. Signaling completion of a message transfer from an origin compute node to a target compute node

    DOEpatents

    Blocksome, Michael A.

    2011-02-15

    Signaling completion of a message transfer from an origin node to a target node includes: sending, by an origin DMA engine, an RTS message, the RTS message specifying an application message for transfer to the target node from the origin node; receiving, by the origin DMA engine, a remote get message containing a data descriptor for the message and a completion notification descriptor, the completion notification descriptor specifying a local memory FIFO data transfer operation for transferring data locally on the origin node; inserting, by the origin DMA engine in an injection FIFO buffer, the data descriptor followed by the completion notification descriptor; transferring, by the origin DMA engine to the target node, the message in dependence upon the data descriptor; and notifying, by the origin DMA engine, the application that transfer of the message is complete in dependence upon the completion notification descriptor.

  10. Triacylated cyanidin 3-(3X-glucosylsambubioside)-5-glucosides from the flowers of Malcolmia maritima.

    PubMed

    Tatsuzawa, Fumi; Saito, Norio; Toki, Kenjiro; Shinoda, Koichi; Shigihara, Atsushi; Honda, Toshio

    2008-02-01

    Three acylated cyanidin 3-(3(X)-glucosylsambubioside)-5-glucosides (1-3) and one non-acylated cyanidin 3-(3(X)-glucosylsambubioside)-5-glucoside (4) were isolated from the purple-violet or violet flowers and purple stems of Malcolmia maritima (L.) R. Br (the Cruciferae), and their structures were determined by chemical and spectroscopic methods. In the flowers of this plant, pigment 1 was determined to be cyanidin 3-O-[2-O-(2-O-(trans-sinapoyl)-3-O-(beta-D-glucopyranosyl)-beta-D-xylopyranosyl)-6-O-(trans-p-coumaroyl)-beta-D-glucopyranoside]-5-O-[6-O-(malonyl)-(beta-D-glucopyranoside) as a major pigment, and a minor pigment 2 was determined to be the cis-p-coumaroyl isomer of pigment 1. In the stems, pigment 3 was determined to be cyanidin 3-O-[2-O-(2-O-(trans-sinapoyl)-3-O-(beta-D-glucopyranosyl)-beta-D-xylopyranosyl)-6-O-(trans-p-coumaroyl)-beta-d-glucopyranoside]-5-O-(beta-D-glucopyranoside) as a major anthocyanin, and also a non-acylated anthocyanin, cyanidin 3-O-[2-O-(3-O-(beta-D-glucopyranosyl)-beta-D-xylopyranosyl)-beta-D-glucopyranoside]-5-O-(beta-D-glucopyranoside) was determined to be a minor pigment (pigment 4). In this study, it was established that the acylation-enzymes of malonic acid has important roles for the acylation of 5-glucose residues of these anthocyanins in the flower-tissues of M. maritima; however, the similar enzymatic reactions seemed to be inhibited or lacking in the stem-tissues.

  11. Cu3-xP Nanocrystals as a Material Platform for Near-Infrared Plasmonics and Cation Exchange Reactions

    PubMed Central

    2015-01-01

    Synthesis approaches to colloidal Cu3P nanocrystals (NCs) have been recently developed, and their optical absorption features in the near-infrared (NIR) have been interpreted as arising from a localized surface plasmon resonance (LSPR). Our pump–probe measurements on platelet-shaped Cu3-xP NCs corroborate the plasmonic character of this absorption. In accordance with studies on crystal structure analysis of Cu3P dating back to the 1970s, our density functional calculations indicate that this material is substoichiometric in copper, since the energy of formation of Cu vacancies in certain crystallographic sites is negative, that is, they are thermodynamically favored. Also, thermoelectric measurements point to a p-type behavior of the majority carriers from films of Cu3-xP NCs. It is likely that both the LSPR and the p-type character of our Cu3-xP NCs arise from the presence of a large number of Cu vacancies in such NCs. Motivated by the presence of Cu vacancies that facilitate the ion diffusion, we have additionally exploited Cu3-xP NCs as a starting material on which to probe cation exchange reactions. We demonstrate here that Cu3-xP NCs can be easily cation-exchanged to hexagonal wurtzite InP NCs, with preservation of the anion framework (the anion framework in Cu3-xP is very close to that of wurtzite InP). Intermediate steps in this reaction are represented by Cu3-xP/InP heterostructures, as a consequence of the fact that the exchange between Cu+ and In3+ ions starts from the peripheral corners of each NC and gradually evolves toward the center. The feasibility of this transformation makes Cu3-xP NCs an interesting material platform from which to access other metal phosphides by cation exchange. PMID:25960605

  12. Cu3-x P Nanocrystals as a Material Platform for Near-Infrared Plasmonics and Cation Exchange Reactions.

    PubMed

    De Trizio, Luca; Gaspari, Roberto; Bertoni, Giovanni; Kriegel, Ilka; Moretti, Luca; Scotognella, Francesco; Maserati, Lorenzo; Zhang, Yang; Messina, Gabriele C; Prato, Mirko; Marras, Sergio; Cavalli, Andrea; Manna, Liberato

    2015-02-10

    Synthesis approaches to colloidal Cu3P nanocrystals (NCs) have been recently developed, and their optical absorption features in the near-infrared (NIR) have been interpreted as arising from a localized surface plasmon resonance (LSPR). Our pump-probe measurements on platelet-shaped Cu3-x P NCs corroborate the plasmonic character of this absorption. In accordance with studies on crystal structure analysis of Cu3P dating back to the 1970s, our density functional calculations indicate that this material is substoichiometric in copper, since the energy of formation of Cu vacancies in certain crystallographic sites is negative, that is, they are thermodynamically favored. Also, thermoelectric measurements point to a p-type behavior of the majority carriers from films of Cu3-x P NCs. It is likely that both the LSPR and the p-type character of our Cu3-x P NCs arise from the presence of a large number of Cu vacancies in such NCs. Motivated by the presence of Cu vacancies that facilitate the ion diffusion, we have additionally exploited Cu3-x P NCs as a starting material on which to probe cation exchange reactions. We demonstrate here that Cu3-x P NCs can be easily cation-exchanged to hexagonal wurtzite InP NCs, with preservation of the anion framework (the anion framework in Cu3-x P is very close to that of wurtzite InP). Intermediate steps in this reaction are represented by Cu3-x P/InP heterostructures, as a consequence of the fact that the exchange between Cu(+) and In(3+) ions starts from the peripheral corners of each NC and gradually evolves toward the center. The feasibility of this transformation makes Cu3-x P NCs an interesting material platform from which to access other metal phosphides by cation exchange.

  13. Simultaneous three-wavelength continuous wave laser at 946 nm, 1319 nm and 1064 nm in Nd:YAG

    NASA Astrophysics Data System (ADS)

    Lü, Yanfei; Zhao, Lianshui; Zhai, Pei; Xia, Jing; Fu, Xihong; Li, Shutao

    2013-01-01

    A continuous-wave (cw) diode-end-pumped Nd:YAG laser that generates simultaneous laser at the wavelengths 946 nm, 1319 nm and 1064 nm is demonstrated. The optimum oscillation condition for the simultaneous three-wavelength operation has been derived. Using the separation of the three output couplers, we obtained the maximum output powers of 0.24 W at 946 nm, 1.07 W at 1319 nm and 1.88 W at 1064 nm at the absorbed pump power of 11.2 W. A total output power of 3.19 W for the three-wavelength was achieved at the absorbed pump power of 11.2 W with optical conversion efficiency of 28.5%.

  14. Dynamically reassigning a connected node to a block of compute nodes for re-launching a failed job

    DOEpatents

    Budnik, Thomas A [Rochester, MN; Knudson, Brant L [Rochester, MN; Megerian, Mark G [Rochester, MN; Miller, Samuel J [Rochester, MN; Stockdell, William M [Byron, MN

    2012-03-20

    Methods, systems, and products for dynamically reassigning a connected node to a block of compute nodes for re-launching a failed job that include: identifying that a job failed to execute on the block of compute nodes because connectivity failed between a compute node assigned as at least one of the connected nodes for the block of compute nodes and its supporting I/O node; and re-launching the job, including selecting an alternative connected node that is actively coupled for data communications with an active I/O node; and assigning the alternative connected node as the connected node for the block of compute nodes running the re-launched job.

  15. Resolution enhancement techniques for contact hole printing of sub-50nm memory device

    NASA Astrophysics Data System (ADS)

    Shin, Hye-Jin; You, Tae-jun; Yoo, Min-Ae; Choi, Jin-Young; Yang, Kiho; Park, Chan-Ha; Yim, Dong-gyu

    2008-11-01

    In resolution limited lithography process, the contact hole pattern is one of the most challenging features to be printed on wafer. A lot of lithographers struggle to make robust hole patterns under 45nm node, especially if the contact hole patterns are composed of dense array and isolated hole simultaneously. The strong OAI(Off Axis Illumination) such as dipole is very useful technique to enhance resolution for specific features. However the contact hole formed by dipole illumination usually has elliptical shape and the asymmetric feature leads to increment of chip size. In this paper, we will explore the lithographic feasibility for the coexisting dense array with isolated contact holes and the technical issues are investigated to generate finer contact hole for both dense and isolated feature. Conventional illumination with resist shrinkage technique will be used to generate dense array and isolated contact hole maintaining original shape for the sub-50nm node memory device.

  16. APF pitch-halving for 22nm logic cells using gridded design rules

    NASA Astrophysics Data System (ADS)

    Smayling, Michael C.; Bencher, Christopher; Chen, Hao D.; Dai, Huixiong; Duane, Michael P.

    2008-03-01

    The 22nm logic technology node with dimensions of ~32nm will be the first node to require some form of pitch-halving. A unique combination of a Producer APF (R)-based process sequence and GDR-based design style permits implementation of random logic functions with regular layout patterns. The APF (Advanced Patterning Film) pitch-halving approach is a classic Self-Aligned Double Patterning scheme (SADP) [1,2,3,4] which involves the creation of CVD dielectric spacers on an APF sacrificial template and using the spacers as a hardmask for line frequency doubling. The Tela Canva TM implements Gridded Design Rules (GDR) using straight lines placed on a regular grid. Logic functions can be implemented using lines on a half-pitch with gaps at selected locations.

  17. Implementation of Multiple Host Nodes in Wireless Sensing Node Network System for Landslide Monitoring

    NASA Astrophysics Data System (ADS)

    Abas, Faizulsalihin bin; Takayama, Shigeru

    2015-02-01

    This paper proposes multiple host nodes in Wireless Sensing Node Network System (WSNNS) for landslide monitoring. As landslide disasters damage monitoring system easily, one major demand in landslide monitoring is the flexibility and robustness of the system to evaluate the current situation in the monitored area. For various reasons WSNNS can provide an important contribution to reach that aim. In this system, acceleration sensors and GPS are deployed in sensing nodes. Location information by GPS, enable the system to estimate network topology and enable the system to perceive the location in emergency by monitoring the node mode. Acceleration sensors deployment, capacitate this system to detect slow mass movement that can lead to landslide occurrence. Once deployed, sensing nodes self-organize into an autonomous wireless ad hoc network. The measurement parameter data from sensing nodes is transmitted to Host System via host node and "Cloud" System. The implementation of multiple host nodes in Local Sensing Node Network System (LSNNS), improve risk- management of the WSNNS for real-time monitoring of landslide disaster.

  18. Inline detection of Chrome degradation on binary 193nm photomasks

    NASA Astrophysics Data System (ADS)

    Dufaye, Félix; Sippel, Astrid; Wylie, Mark; García-Berríos, Edgardo; Crawford, Charles; Hess, Carl; Sartelli, Luca; Pogliani, Carlo; Miyashita, Hiroyuki; Gough, Stuart; Sundermann, Frank; Brochard, Christophe

    2013-09-01

    193nm binary photomasks are still used in the semiconductor industry for the lithography of some critical layers for the nodes 90nm and 65nm, with high volumes and over long periods. However, these 193nm binary photomasks can be impacted by a phenomenon of chrome oxidation leading to critical dimensions uniformity (CDU) degradation with a pronounced radial signature. If not detected early enough, this CDU degradation may cause defectivity issues and lower yield on wafers. Fortunately, a standard cleaning and repellicle service at the mask shop has been demonstrated as efficient to remove the grown materials and get the photomask CD back on target.Some detection methods have been already described in literature, such as wafer CD intrafield monitoring (ACLV), giving reliable results but also consuming additional SEM time with less precision than direct photomask measurement. In this paper, we propose another approach, by monitoring the CDU directly on the photomask, concurrently with defect inspection for regular requalification to production for wafer fabs. For this study, we focused on a Metal layer in a 90nm technology node. Wafers have been exposed with production conditions and then measured by SEM-CD. Afterwards, this photomask has been measured with a SEM-CD in mask shop and also inspected on a KLA-Tencor X5.2 inspection system, with pixels 125 and 90nm, to evaluate the Intensity based Critical Dimension Uniformity (iCDU) option. iCDU was firstly developed to provide feed-forward CDU maps for scanner intrafield corrections, from arrayed dense structures on memory photomasks. Due to layout complexity and differing feature types, CDU monitoring on logic photomasks used to pose unique challenges.The selection of suitable feature types for CDU monitoring on logic photomasks is no longer an issue, since the transmitted intensity map gives all the needed information, as shown in this paper. In this study, the photomask was heavily degraded after more than 18,000 300

  19. Inspection results for 32nm logic and sub-50nm half-pitch memory reticles using the TeraScanHR

    NASA Astrophysics Data System (ADS)

    Sier, Jean-Paul; Broadbent, William; Mirzaagha, Farzin; Yu, Paul

    2007-10-01

    Results from the recently available TeraScanHR reticle inspection system were published in early 2007. These results showed excellent inspection capability for 45nm logic and 5xnm half-pitch memory advanced production reticles, thus meeting the industry need for the mid-2007 start of production. The system has been in production use since that time. In early 2007, some evidence was shown of capability to inspect reticles for the next nodes, 32nm logic and sub-50nm half-pitch memory, but the results were incomplete due to the limited availability of such reticles. However, more of these advanced reticles have become available since that time. Inspection results of these advanced reticles from various leading edge reticle manufacturers using the TeraScanHR are shown. These results indicate that the system has the capability to provide the needed inspection sensitivity for continued development work to support the industry roadmap.

  20. In depth characterization of electron transport in 14 nm FD-SOI CMOS devices

    NASA Astrophysics Data System (ADS)

    Shin, Minju; Shi, Ming; Mouis, Mireille; Cros, Antoine; Josse, Emmanuel; Kim, Gyu-Tae; Ghibaudo, Gérard

    2015-10-01

    In this paper, carrier transport properties in highly scaled (down to 14 nm-node) FDSOI CMOS devices are presented from 77 K to 300 K. At first, we analyzed electron transport characteristics in terms of different gate-oxide stack in NMOS long devices. So, we found that SOP and RCS can be the dominant contribution of additional mobility scatterings in different temperature regions. Then, electron mobility degradation in short channel devices was deeply investigated. It can be stemmed from additional scattering mechanisms, which were attributed to process-induced defects near source and drain. Finally, we found that mobility enhancement by replacing Si to SiGe channel in PMOS devices was validated and this feature was not effective anymore in sub-100 nm devices. The critical lengths were around 50 nm and 100 nm for NMOS and PMOS devices, respectively.

  1. Stochastic effects in 11 nm imaging of extreme ultraviolet lithography with chemically amplified resists

    NASA Astrophysics Data System (ADS)

    Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

    2014-03-01

    The resolution of extreme ultraviolet (EUV) lithography with chemically amplified resist processes has reached 16 nm (half-pitch). The development of chemically amplified resists is ongoing toward the 11 nm node. However, the stochastic effects are increasingly becoming a significant concern with the continuing shrinkage of features. In this study, the fluctuation of protected unit distribution caused by the stochastic effects during image formation was investigated assuming line-and-space patterns with 11 nm half-pitch. Contrary to expectations, the standard deviation of the number of protected units connected to a polymer after postexposure baking (PEB) did not differ from that for 16 nm half-pitch. The standard deviation after PEB increased with the effective reaction radius for deprotection and the initial standard deviation before PEB. Because of the severe requirements for resist processes, the stochastic effects in chemical reactions should be taken into account in the design of next-generation resists.

  2. Raman spectroscopy as a tool for the identification and differentiation of neoplasias contained within lymph nodes of the head and neck

    NASA Astrophysics Data System (ADS)

    Orr, Linda E.; Christie-Brown, Jonathan; Hutchings, Joanne C.; McCarthy, Keith; Rose, Simon; Thomas, Michael; Stone, Nicholas

    2010-02-01

    The use of Raman spectroscopy in the detection and classification of malignancy within lymph nodes of the head and neck has been evaluated. Currently histopathology is considered the diagnostic gold standard. A consensus (majority) opinion from three expert histopathologists has been obtained and spectral diagnostic models developed by correlation with their opinions. Raman spectra have been measured at 830nm from 103 lymph nodes collected from patients undergoing surgery for a suspicious node. The pathologies covered reactive lymph nodes, primaries from Hodgkin's and non-Hodgkin's lymphomas and metastases from squamous cell carcinomas and adenocarcinomas. Spectral diagnostic models were constructed using PCA-fed-LDA and tested using leave-one-specimen-out cross validation. Models were constructed to distinguish between reactive and malignant nodes as well as a four group model to distinguish between the benign, metastatic and primary conditions. They achieved 89% and 84% correct prediction by node versus the gold standard, majority histopathology.

  3. New antireflective coatings for 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Xu, Gu; Guerrero, Douglas J.; Dobson, Norman

    1998-06-01

    New bottom antireflective coatings (BARCs) for 193 nm lithography have been recently developed by Brewer Science Inc. Copolymers of benzyl methacrylate (or benzyl acrylate) and hydroxypropyl methacrylate have been synthesized and used as a main component in 193 nm BARCs. The acrylic copolymers have strong absorbance at 193 nm UV light wavelength. The 193 nm BARCs were formulated in safe solvents such as ethyl lactate and formed by spin-on coating process. Thermosetting of the 193 nm BARCs limited their intermixing with photoresists. These 193 nm BARCs had optical density of about 10 micrometers -1, k equals 0.35, and n equals 1.81. Preliminary oxygen plasma etch rates were > 1.5 times DUV resists. Good profiles at small feature sizes (< 0.20 micrometers ) were achieved with tested photoresists.

  4. Arm lymphoscintigraphy after axillary lymph node dissection or sentinel lymph node biopsy in breast cancer

    PubMed Central

    Sarri, Almir José; Dias, Rogério; Laurienzo, Carla Elaine; Gonçalves, Mônica Carboni Pereira; Dias, Daniel Spadoto; Moriguchi, Sonia Marta

    2017-01-01

    Purpose Compare the lymphatic flow in the arm after breast cancer surgery and axillary lymph node dissection (ALND) versus sentinel lymph node biopsy (SLNB) using lymphos-cintigraphy (LS). Patients and methods A cross-sectional study with 39 women >18 years who underwent surgical treatment for unilateral breast cancer and manipulation of the axillary lymph node chain through either ALND or SLNB, with subsequent comparison of the lymphatic flow of the arm by LS. The variables analyzed were the area reached by the lymphatic flow in the upper limb and the sites and number of lymph nodes identified in the ALND or SLNB groups visualized in the three phases of LS acquisition (immediate dynamic and static images, delayed scan images). For all analyses, the level of significance was set at 5%. Results There was a significant difference between the ALND and SLNB groups, with predominant visualization of lymphatic flow and/or lymph nodes in the arm and axilla (P=0.01) and extra-axillary lymph nodes (P<0.01) in the ALND group. There was no significant difference in the total number of lymph nodes identified between the two groups. However, there was a significant difference in the distribution of lymph nodes in these groups. The cubital lymph node was more often visualized in the immediate dynamic images in the ALND group (P=0.004), while the axillary lymph nodes were more often identified in the delayed scan images of the SLNB group (P<0.01). The deltopectoral lymph node was only identified in the ALND group, but with no significant difference. Conclusion The lymphatic flow from the axilla was redirected to alternative extra-axillary routes in the ALND group. PMID:28331338

  5. Comparative effects of a new calcium channel antagonist, mepirodipine, on rabbit spontaneously beating sino-atrial node cells.

    PubMed

    Satoh, H; Hashimoto, K

    1991-01-25

    The effects of mepirodipine, a new 1,4-dihydropyridine calcium antagonist, on the membrane potentials were examined on spontaneously beating rabbit sino-atrial (SA) node cells and on the membrane currents under voltage-clamped conditions. Mepirodipine 3 x 10(-9) M significantly decreased the action potential amplitude and the maximum rate of depolarization. The action potential duration and the cycle length were prolonged. Sinus arrest occurred at 10(-8) M in all of five preparations. In voltage-clamped SA node cells, mepirodipine in concentrations higher than 3 x 10(-9) M decreased the slow inward current. It did not affect the steady state outward current and the hyperpolarization-activated inward current. Verapamil, diltiazem and nifedipine produced similar changes in the action potential parameters, but at a concentration of 10(-6) M. At concentrations higher than 10(-5) M, they elicited sinus arrest. These results suggest that mepirodipine is a more potent inhibitor of spontaneous calcium-dependent SA node impulse generation than the three other calcium antagonists tested.

  6. Design technology co-optimization for 14/10nm metal1 double patterning layer

    NASA Astrophysics Data System (ADS)

    Duan, Yingli; Su, Xiaojing; Chen, Ying; Su, Yajuan; Shao, Feng; Zhang, Recco; Lei, Junjiang; Wei, Yayi

    2016-03-01

    Design and technology co-optimization (DTCO) can satisfy the needs of the design, generate robust design rule, and avoid unfriendly patterns at the early stage of design to ensure a high level of manufacturability of the product by the technical capability of the present process. The DTCO methodology in this paper includes design rule translation, layout analysis, model validation, hotspots classification and design rule optimization mainly. The correlation of the DTCO and double patterning (DPT) can optimize the related design rule and generate friendlier layout which meets the requirement of the 14/10nm technology node. The experiment demonstrates the methodology of DPT-compliant DTCO which is applied to a metal1 layer from the 14/10nm node. The DTCO workflow proposed in our job is an efficient solution for optimizing the design rules for 14/10 nm tech node Metal1 layer. And the paper also discussed and did the verification about how to tune the design rule of the U-shape and L-shape structures in a DPT-aware metal layer.

  7. Liposome-coated quantum dots targeting the sentinel lymph node

    NASA Astrophysics Data System (ADS)

    Chu, Maoquan; Zhuo, Shu; Xu, Jiang; Sheng, Qiunan; Hou, Shengke; Wang, Ruifei

    2010-01-01

    Sentinel lymph node (SLN) mapping with near-infrared (NIR) quantum dot (QDs) have many advantages over traditional methods. However, as an inorganic nanomaterial, QDs have low biocompatibility and low affinity to the lymphatic system. Here, we encapsulated QDs into nanoscale liposomes and then used these liposome-coated QDs for SLN mapping. The results showed that the liposome-coated QDs exhibited core-shell characterization, and their fluorescence emission did not decrease but slightly increased after being continuously excited by a xenon lamp source (150 W) at 488 nm at 37 °C for 1 h. After storing at 4 °C for more than one and half years, the liposome-coated QDs were found to have retained their spherical structure containing a large amount of QDs. When liposome-coated QDs with average size of 55.43 nm were injected intradermally into the paw of a mouse, the SLN was strongly fluorescent within only a few seconds and visualized easily in real time. Moreover, the fluorescence of the QDs trapped in the SLN could be observed for at least 24 h. Compared with the SLN mapping of QDs absent of liposomes and liposome-coated QDs with a larger average size (100.3 and 153.6 nm), more QDs migrated into the SLN when the liposome-coated QDs with smaller average size (55.43 nm) were injected. This technique may make a great contribution to the improvement of the biocompatibility of QDs and the targeting delivery capacity of QDs into the SLN.

  8. Customized illumination shapes for 193nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Ling, Moh Lung; Chua, Gek Soon; Lin, Qunying; Tay, Cho Jui; Quan, Chenggen

    2008-03-01

    In this paper, a study on customized illumination shape configurations as resolution enhancement for 45nm technology node will be presented. Several new source shape configurations will be explored through simulation based on 193nm immersion lithography on 6% Attenuated Phase Shift Mask. Forbidden pitch effect is commonly encountered in the application of off axis illumination (OAI). The illumination settings are often optimized to allow maximum process window for a pitch. This is done by creating symmetrical distribution of diffraction order on the pupil plane. However, at other pitch, the distribution of diffraction order on the pupil plane results in severe degradation in image contrast and results in significant critical dimension (CD) fluctuation. The problematic pitch is often known as forbidden pitch. It has to be avoided in the design and thus limited the pitch range to be imaged for particular illumination. An approach to modify off axis illumination to minimize the effect of forbidden pitch is explored in this study. The new customized shape for one dimensional line and space pattern is modified from current off axis illumination. Simulation study is done to evaluate the performance some customized shapes. The extent of CD fluctuation and CD through pitch uniformity is analyzed to determine the performance enhancement of the new illumination shapes. From simulation result, the proposed modification have significantly improved the through pitch performance and minimized the effect of forbidden pitch.

  9. Synthesis and magnetic characterization of cobalt-substituted ferrite (Co xFe 3-xO 4) nanoparticles

    NASA Astrophysics Data System (ADS)

    Calero-DdelC, Victoria L.; Rinaldi, Carlos

    2007-07-01

    Cobalt-substituted ferrite nanoparticles were synthesized with a narrow size distribution using reverse micelles formed in the system water/AOT/isooctane. Fe:Co ratios of 3:1, 4:1, and 5:1 were used in the synthesis, obtaining cobalt-substituted ferrites (Co xFe 3-xO 4) and some indication of γ-Fe 3O 4 when 4:1 and 5:1 Fe:Co ratios were used. Inductively coupled plasma mass spectroscopy (ICP-MS) verified the presence of cobalt in all samples. Fourier transform infrared (FTIR) showed bands at ˜560 and ˜400 cm -1, characteristic of the metal-oxygen bond in ferrites. Transmission electron microscopy showed that the number median diameter of the particles was ˜3 nm with a geometric deviation of ˜0.2. X-ray diffraction (XRD) confirmed the inverse spinel structure typical of ferrites with a lattice parameter of a=8.388 Å for Co 0.61Fe 0.39O 4, which is near that of CoFe 2O 4 ( a=8.394 Å). Magnetic properties were determined using a superconducting quantum interference device (SQUID). Coercivities higher than 8 kOe were observed at 5 K, whereas at 300 K the particles showed superparamagnetic behavior. The anisotropy constant was determined based on the Debye model for a magnetic dipole in an oscillating field and an expression relating χ' and the temperature of the in-phase susceptibility peak. Anisotropy constant values in the order of ˜10 6 erg/cm 3 were determined using the Debye model, whereas anisotropy constants in the order of ˜10 7 erg/cm 3 were calculated assuming Ωτ=1 at the temperature peak of the in-phase component of the susceptibility curve as commonly done in the literature. Our analysis demonstrates that the assumption Ωτ=1 at the temperature peak of χ' is rigorously incorrect.

  10. Fast Anion-Exchange in Highly Luminescent Nanocrystals of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, I)

    PubMed Central

    2015-01-01

    Postsynthetic chemical transformations of colloidal nanocrystals, such as ion-exchange reactions, provide an avenue to compositional fine-tuning or to otherwise inaccessible materials and morphologies. While cation-exchange is facile and commonplace, anion-exchange reactions have not received substantial deployment. Here we report fast, low-temperature, deliberately partial, or complete anion-exchange in highly luminescent semiconductor nanocrystals of cesium lead halide perovskites (CsPbX3, X = Cl, Br, I). By adjusting the halide ratios in the colloidal nanocrystal solution, the bright photoluminescence can be tuned over the entire visible spectral region (410–700 nm) while maintaining high quantum yields of 20–80% and narrow emission line widths of 10–40 nm (from blue to red). Furthermore, fast internanocrystal anion-exchange is demonstrated, leading to uniform CsPb(Cl/Br)3 or CsPb(Br/I)3 compositions simply by mixing CsPbCl3, CsPbBr3, and CsPbI3 nanocrystals in appropriate ratios. PMID:26207728

  11. Fast Anion-Exchange in Highly Luminescent Nanocrystals of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, I).

    PubMed

    Nedelcu, Georgian; Protesescu, Loredana; Yakunin, Sergii; Bodnarchuk, Maryna I; Grotevent, Matthias J; Kovalenko, Maksym V

    2015-08-12

    Postsynthetic chemical transformations of colloidal nanocrystals, such as ion-exchange reactions, provide an avenue to compositional fine-tuning or to otherwise inaccessible materials and morphologies. While cation-exchange is facile and commonplace, anion-exchange reactions have not received substantial deployment. Here we report fast, low-temperature, deliberately partial, or complete anion-exchange in highly luminescent semiconductor nanocrystals of cesium lead halide perovskites (CsPbX3, X = Cl, Br, I). By adjusting the halide ratios in the colloidal nanocrystal solution, the bright photoluminescence can be tuned over the entire visible spectral region (410-700 nm) while maintaining high quantum yields of 20-80% and narrow emission line widths of 10-40 nm (from blue to red). Furthermore, fast internanocrystal anion-exchange is demonstrated, leading to uniform CsPb(Cl/Br)3 or CsPb(Br/I)3 compositions simply by mixing CsPbCl3, CsPbBr3, and CsPbI3 nanocrystals in appropriate ratios.

  12. Beryllium-Free KBBF Family of Nonlinear-Optical Crystals: AZn2BO3X2 (A = Na, K, Rb; X = Cl, Br).

    PubMed

    Huang, Qian; Liu, Lijuan; Wang, Xiaoyang; Li, Rukang; Chen, Chuangtian

    2016-12-19

    A series of a novel beryllium-free KBBF family of nonlinear-optical materials AZn2BO3X2 (A = K, Rb and X = Cl; A = Na, K, Rb and X = Br) were successfully synthesized through molecular engineering design, and single crystals of AZn2BO3Cl2 (A = K, Rb) were grown by a spontaneous nucleation technique from self-flux systems. As a representative for the halogen KBBF family of crystals, KZn2BO3Cl2 features the infinite lattice layer [Zn2BO3Cl2]∞ made up of BO3 and ZnO3Cl anionic groups, and the in-layer BO3 groups are completely coplanar and well-aligned. Besides, KZn2BO3Cl2 exhibits high transmittance in the range of 300-2000 nm with a UV-transmission cutoff of around 200 nm according to transmission spectra. The compounds of AZn2BO3Cl2 (A = K, Rb) are both phase-matchable with powder second-harmonic-generation efficiencies of 1.3 and 1.17 times that of KH2PO4 for KZn2BO3Cl2 and RbZn2BO3Cl2, respectively, which are similar to that of KBBF.

  13. Labeling Nodes Using Three Degrees of Propagation

    PubMed Central

    Mostafavi, Sara; Goldenberg, Anna; Morris, Quaid

    2012-01-01

    The properties (or labels) of nodes in networks can often be predicted based on their proximity and their connections to other labeled nodes. So-called “label propagation algorithms” predict the labels of unlabeled nodes by propagating information about local label density iteratively through the network. These algorithms are fast, simple and scale to large networks but nonetheless regularly perform better than slower and much more complex algorithms on benchmark problems. We show here, however, that these algorithms have an intrinsic limitation that prevents them from adapting to some common patterns of network node labeling; we introduce a new algorithm, 3Prop, that retains all their advantages but is much more adaptive. As we show, 3Prop performs very well on node labeling problems ill-suited to label propagation, including predicting gene function in protein and genetic interaction networks and gender in friendship networks, and also performs slightly better on problems already well-suited to label propagation such as labeling blogs and patents based on their citation networks. 3Prop gains its adaptability by assigning separate weights to label information from different steps of the propagation. Surprisingly, we found that for many networks, the third iteration of label propagation receives a negative weight. Availability The code is available from the authors by request. PMID:23284828

  14. Weyl Nodes in Trigonal Tellurium and Selenium

    NASA Astrophysics Data System (ADS)

    Hirayama, Motoaki; Okugawa, Ryo; Ishibashi, Shoji; Murakami, Shuichi; Miyake, Takashi

    2015-03-01

    Singular points in the momentum space (Dirac nodes) have been under intensive investigation recently. Among various Dirac systems, materials having three-dimensional Dirac nodes without spin degeneracy (Weyl nodes) are of particular interest because of their topological nature. We study trigonal Te and Se as systems having both strong spin-orbit interaction (SOI) and broken inversion symmetry, which is necessary for the Weyl node. We calculate the electronic structure by using QMAS based on relativistic density functional theory, and add the self-energy correction in the GW approximation. Te and Se are insulating at ambient pressure. The conduction bands have a spin splitting similar to the Rashba splitting around the H points, but unlike the Rashba splitting the spin directions are radial, forming a hedgehog spin texture. The energy gap decreases with increasing pressure. In the metallic phase, the spin rotates twice around H on the kz = +/- π/c plane, which can be explained by the motion of the Weyl nodes under pressure. We also find that trigonal Te shows the Weyl semimetal phase with time-reversal symmetry under pressure.

  15. Node Survival in Networks under Correlated Attacks

    PubMed Central

    Hao, Yan; Armbruster, Dieter; Hütt, Marc-Thorsten

    2015-01-01

    We study the interplay between correlations, dynamics, and networks for repeated attacks on a socio-economic network. As a model system we consider an insurance scheme against disasters that randomly hit nodes, where a node in need receives support from its network neighbors. The model is motivated by gift giving among the Maasai called Osotua. Survival of nodes under different disaster scenarios (uncorrelated, spatially, temporally and spatio-temporally correlated) and for different network architectures are studied with agent-based numerical simulations. We find that the survival rate of a node depends dramatically on the type of correlation of the disasters: Spatially and spatio-temporally correlated disasters increase the survival rate; purely temporally correlated disasters decrease it. The type of correlation also leads to strong inequality among the surviving nodes. We introduce the concept of disaster masking to explain some of the results of our simulations. We also analyze the subsets of the networks that were activated to provide support after fifty years of random disasters. They show qualitative differences for the different disaster scenarios measured by path length, degree, clustering coefficient, and number of cycles. PMID:25932635

  16. Node Survival in Networks under Correlated Attacks.

    PubMed

    Hao, Yan; Armbruster, Dieter; Hütt, Marc-Thorsten

    2015-01-01

    We study the interplay between correlations, dynamics, and networks for repeated attacks on a socio-economic network. As a model system we consider an insurance scheme against disasters that randomly hit nodes, where a node in need receives support from its network neighbors. The model is motivated by gift giving among the Maasai called Osotua. Survival of nodes under different disaster scenarios (uncorrelated, spatially, temporally and spatio-temporally correlated) and for different network architectures are studied with agent-based numerical simulations. We find that the survival rate of a node depends dramatically on the type of correlation of the disasters: Spatially and spatio-temporally correlated disasters increase the survival rate; purely temporally correlated disasters decrease it. The type of correlation also leads to strong inequality among the surviving nodes. We introduce the concept of disaster masking to explain some of the results of our simulations. We also analyze the subsets of the networks that were activated to provide support after fifty years of random disasters. They show qualitative differences for the different disaster scenarios measured by path length, degree, clustering coefficient, and number of cycles.

  17. Processing and characterization of zeta-Ta4C 3-x: A high toughness tantalum carbide

    NASA Astrophysics Data System (ADS)

    Sygnatowicz, Michael M.

    Tantalum carbides are commonly processed by hot-pressing, canned hot-isostatic-pressing, or spark-plasma sintering because of their high melting temperatures and low diffusivities. This study reports processing of dense ζ-Ta4C 3-x by reaction sintering of a Ta and TaC powder mixture (C/Ta atomic ratio = 0.66). ζ-Ta4C3-x is of interest due to its rhombohedral (trigonal) crystal structure that may be characterized as a polytype with both face-centered-cubic (fcc) and hexagonal-close-packed (hcp) Ta stacking sequences interrupted by stacking faults and missing carbon layers. This structure leads to easy cleaving on the basal planes and high fracture toughness. A key step in processing is the hydrogenation of the Ta powder to produce beta-TaH x, a hard and brittle phase that enables efficient comminution during milling and production of small, equiaxed Ta particles that can be packed to high green density with the TaC powder. Studies of phase evolution by quantitative X-ray diffraction during sintering revealed several intermediate reactions: (a) decomposition of beta-TaHx to Ta, (b) diffusion of C from gamma-TaC to Ta leading to the formation of α-Ta2Cy' with the kinetics described by the Johnson-Mehl-Avrami-Kolmogorov (JMAK) equation with an exponent, n = 0.5, and an activation energy of 221 kJ/mole, (c) equilibration of α-Ta2Cy' and gamma-TaC 0.78 phases, and (d) formation of ζ-Ta4C2.56 from the equilibrated α-Ta2C and gamma-TaC0.78 phases with the kinetics characterized by a higher JMAK exponent ( n ≈ 3) and higher activation energy (1089 kJ/mole). The microstructure showed evidence of nucleation and growth of the ζ-Ta4C 2.56 phase in both the α-Ta2C and gamma-TaC0.78 parent phases with distinct difference in the morphology due to the different number of variants of the habit plane. A hot-pressed and hot-isostatic-pressed (HIPed) material (C/Ta atomic ratio = 0.66), having formed 95 w% ζ-phase, attained a fracture toughness of 15.6 +/- 0.5 MPa√m and a

  18. Portable widefield imaging device for ICG-detection of the sentinel lymph node

    NASA Astrophysics Data System (ADS)

    Govone, Angelo Biasi; Gómez-García, Pablo Aurelio; Carvalho, André Lopes; Capuzzo, Renato de Castro; Magalhães, Daniel Varela; Kurachi, Cristina

    2015-06-01

    Metastasis is one of the major cancer complications, since the malignant cells detach from the primary tumor and reaches other organs or tissues. The sentinel lymph node (SLN) is the first lymphatic structure to be affected by the malignant cells, but its location is still a great challenge for the medical team. This occurs due to the fact that the lymph nodes are located between the muscle fibers, making it visualization difficult. Seeking to aid the surgeon in the detection of the SLN, the present study aims to develop a widefield fluorescence imaging device using the indocyanine green as fluorescence marker. The system is basically composed of a 780nm illumination unit, optical components for 810nm fluorescence detection, two CCD cameras, a laptop, and dedicated software. The illumination unit has 16 diode lasers. A dichroic mirror and bandpass filters select and deliver the excitation light to the interrogated tissue, and select and deliver the fluorescence light to the camera. One camera is responsible for the acquisition of visible light and the other one for the acquisition of the ICG fluorescence. The software developed at the LabVIEW® platform generates a real time merged image where it is possible to observe the fluorescence spots, related to the lymph nodes, superimposed at the image under white light. The system was tested in a mice model, and a first patient with tongue cancer was imaged. Both results showed the potential use of the presented fluorescence imaging system assembled for sentinel lymph node detection.

  19. Molecular organization of cytokinesis nodes and contractile rings by super-resolution fluorescence microscopy of live fission yeast

    PubMed Central

    Laplante, Caroline; Huang, Fang; Tebbs, Irene R.; Bewersdorf, Joerg; Pollard, Thomas D.

    2016-01-01

    Cytokinesis in animals, fungi, and amoebas depends on the constriction of a contractile ring built from a common set of conserved proteins. Many fundamental questions remain about how these proteins organize to generate the necessary tension for cytokinesis. Using quantitative high-speed fluorescence photoactivation localization microscopy (FPALM), we probed this question in live fission yeast cells at unprecedented resolution. We show that nodes, protein assembly precursors to the contractile ring, are discrete structural units with stoichiometric ratios and distinct distributions of constituent proteins. Anillin Mid1p, Fes/CIP4 homology-Bin/amphiphysin/Rvs (F-BAR) Cdc15p, IQ motif containing GTPase-activating protein (IQGAP) Rng2p, and formin Cdc12p form the base of the node that anchors the ends of myosin II tails to the plasma membrane, with myosin II heads extending into the cytoplasm. This general node organization persists in the contractile ring where nodes move bidirectionally during constriction. We observed the dynamics of the actin network during cytokinesis, starting with the extension of short actin strands from nodes, which sometimes connected neighboring nodes. Later in cytokinesis, a broad network of thick bundles coalesced into a tight ring around the equator of the cell. The actin ring was ∼125 nm wide and ∼125 nm thick. These observations establish the organization of the proteins in the functional units of a cytokinetic contractile ring. PMID:27647921

  20. Node-surface and node-line fermions from nonsymmorphic lattice symmetries

    NASA Astrophysics Data System (ADS)

    Liang, Qi-Feng; Zhou, Jian; Yu, Rui; Wang, Zhi; Weng, Hongming

    2016-02-01

    We propose a kind of topological quantum state of semimetals in the quasi-one-dimensional (1D) crystal family BaMX 3 (M =V , Nb, or Ta; X =S or Se) by using symmetry analysis and first-principles calculation. We find that in BaVS3 the valence and conduction bands are degenerate in the kz=π /c plane (c is the lattice constant along the z ̂ axis) of the Brillouin zone (BZ). These nodal points form a node surface, and they are protected by a nonsymmorphic crystal symmetry consisting of a twofold rotation about the z ̂ axis and a half-translation along the same z ̂ axis. The band degeneracy in the node surface is lifted in BaTaS3 by including strong spin-orbit coupling (SOC) of Ta. The node surface is reduced into 1D node lines along the high-symmetry paths kx=0 and kx=±√{3 }ky on the kz=π /c plane. These node lines are robust against SOC and guaranteed by the symmetries of the P 63/m m c space group. These node-line states are entirely different from previous proposals which are based on the accidental band touchings. We also propose a useful material design for realizing topological node-surface and node-line semimetals.

  1. "Fast" and "thick" e-beam resists exposed with multi-beam tool at 5 keV for implants and mature nodes: experimental and simulated model study

    NASA Astrophysics Data System (ADS)

    Fay, Aurélien; Thiam, Ndeye A.; Cordini, Marie-Laure; Servin, Isabelle; Constancias, Christophe; Lattard, Ludovic; Pain, Laurent

    2015-03-01

    In addition to sub-20 nm technology nodes, multi-beam lithography at low-energy has also the capability to address mature CMOS technologies [130-45nm nodes] with high throughput and significant manufacturing costs reduction. It requires both "fast" resists for throughput gain and cost of ownership and "thick" resists matched with the current post-lithography processes such as etching and implant steps. We successfully demonstrated patterning of 45-130 nm nodes structures on different thick resists (up to 160 nm) with a 5 keV Mapper pre-alpha tool. In parallel, we developed a theoretical model to simulate 3D patterning showing good agreement with our experimental results.

  2. Node degree distribution in spanning trees

    NASA Astrophysics Data System (ADS)

    Pozrikidis, C.

    2016-03-01

    A method is presented for computing the number of spanning trees involving one link or a specified group of links, and excluding another link or a specified group of links, in a network described by a simple graph in terms of derivatives of the spanning-tree generating function defined with respect to the eigenvalues of the Kirchhoff (weighted Laplacian) matrix. The method is applied to deduce the node degree distribution in a complete or randomized set of spanning trees of an arbitrary network. An important feature of the proposed method is that the explicit construction of spanning trees is not required. It is shown that the node degree distribution in the spanning trees of the complete network is described by the binomial distribution. Numerical results are presented for the node degree distribution in square, triangular, and honeycomb lattices.

  3. Energy Options for Wireless Sensor Nodes

    PubMed Central

    Knight, Chris; Davidson, Joshua; Behrens, Sam

    2008-01-01

    Reduction in size and power consumption of consumer electronics has opened up many opportunities for low power wireless sensor networks. One of the major challenges is in supporting battery operated devices as the number of nodes in a network grows. The two main alternatives are to utilize higher energy density sources of stored energy, or to generate power at the node from local forms of energy. This paper reviews the state-of-the art technology in the field of both energy storage and energy harvesting for sensor nodes. The options discussed for energy storage include batteries, capacitors, fuel cells, heat engines and betavoltaic systems. The field of energy harvesting is discussed with reference to photovoltaics, temperature gradients, fluid flow, pressure variations and vibration harvesting. PMID:27873975

  4. SpicyNodes Radial Map Engine

    NASA Astrophysics Data System (ADS)

    Douma, M.; Ligierko, G.; Angelov, I.

    2008-10-01

    The need for information has increased exponentially over the past decades. The current systems for constructing, exploring, classifying, organizing, and searching information face the growing challenge of enabling their users to operate efficiently and intuitively in knowledge-heavy environments. This paper presents SpicyNodes, an advanced user interface for difficult interaction contexts. It is based on an underlying structure known as a radial map, which allows users to manipulate and interact in a natural manner with entities called nodes. This technology overcomes certain limitations of existing solutions and solves the problem of browsing complex sets of linked information. SpicyNodes is also an organic system that projects users into a living space, stimulating exploratory behavior and fostering creative thought. Our interactive radial layout is used for educational purposes and has the potential for numerous other applications.

  5. Vital nodes identification in complex networks

    NASA Astrophysics Data System (ADS)

    Lü, Linyuan; Chen, Duanbing; Ren, Xiao-Long; Zhang, Qian-Ming; Zhang, Yi-Cheng; Zhou, Tao

    2016-09-01

    Real networks exhibit heterogeneous nature with nodes playing far different roles in structure and function. To identify vital nodes is thus very significant, allowing us to control the outbreak of epidemics, to conduct advertisements for e-commercial products, to predict popular scientific publications, and so on. The vital nodes identification attracts increasing attentions from both computer science and physical societies, with algorithms ranging from simply counting the immediate neighbors to complicated machine learning and message passing approaches. In this review, we clarify the concepts and metrics, classify the problems and methods, as well as review the important progresses and describe the state of the art. Furthermore, we provide extensive empirical analyses to compare well-known methods on disparate real networks, and highlight the future directions. In spite of the emphasis on physics-rooted approaches, the unification of the language and comparison with cross-domain methods would trigger interdisciplinary solutions in the near future.

  6. Clock Agreement Among Parallel Supercomputer Nodes

    DOE Data Explorer

    Jones, Terry R.; Koenig, Gregory A.

    2014-04-30

    This dataset presents measurements that quantify the clock synchronization time-agreement characteristics among several high performance computers including the current world's most powerful machine for open science, the U.S. Department of Energy's Titan machine sited at Oak Ridge National Laboratory. These ultra-fast machines derive much of their computational capability from extreme node counts (over 18000 nodes in the case of the Titan machine). Time-agreement is commonly utilized by parallel programming applications and tools, distributed programming application and tools, and system software. Our time-agreement measurements detail the degree of time variance between nodes and how that variance changes over time. The dataset includes empirical measurements and the accompanying spreadsheets.

  7. Spatiotemporal modeling of node temperatures in supercomputers

    DOE PAGES

    Storlie, Curtis Byron; Reich, Brian James; Rust, William Newton; ...

    2016-06-10

    Los Alamos National Laboratory (LANL) is home to many large supercomputing clusters. These clusters require an enormous amount of power (~500-2000 kW each), and most of this energy is converted into heat. Thus, cooling the components of the supercomputer becomes a critical and expensive endeavor. Recently a project was initiated to investigate the effect that changes to the cooling system in a machine room had on three large machines that were housed there. Coupled with this goal was the aim to develop a general good-practice for characterizing the effect of cooling changes and monitoring machine node temperatures in this andmore » other machine rooms. This paper focuses on the statistical approach used to quantify the effect that several cooling changes to the room had on the temperatures of the individual nodes of the computers. The largest cluster in the room has 1,600 nodes that run a variety of jobs during general use. Since extremes temperatures are important, a Normal distribution plus generalized Pareto distribution for the upper tail is used to model the marginal distribution, along with a Gaussian process copula to account for spatio-temporal dependence. A Gaussian Markov random field (GMRF) model is used to model the spatial effects on the node temperatures as the cooling changes take place. This model is then used to assess the condition of the node temperatures after each change to the room. The analysis approach was used to uncover the cause of a problematic episode of overheating nodes on one of the supercomputing clusters. Lastly, this same approach can easily be applied to monitor and investigate cooling systems at other data centers, as well.« less

  8. Spatiotemporal modeling of node temperatures in supercomputers

    SciTech Connect

    Storlie, Curtis Byron; Reich, Brian James; Rust, William Newton; Ticknor, Lawrence O.; Bonnie, Amanda Marie; Montoya, Andrew J.; Michalak, Sarah E.

    2016-06-10

    Los Alamos National Laboratory (LANL) is home to many large supercomputing clusters. These clusters require an enormous amount of power (~500-2000 kW each), and most of this energy is converted into heat. Thus, cooling the components of the supercomputer becomes a critical and expensive endeavor. Recently a project was initiated to investigate the effect that changes to the cooling system in a machine room had on three large machines that were housed there. Coupled with this goal was the aim to develop a general good-practice for characterizing the effect of cooling changes and monitoring machine node temperatures in this and other machine rooms. This paper focuses on the statistical approach used to quantify the effect that several cooling changes to the room had on the temperatures of the individual nodes of the computers. The largest cluster in the room has 1,600 nodes that run a variety of jobs during general use. Since extremes temperatures are important, a Normal distribution plus generalized Pareto distribution for the upper tail is used to model the marginal distribution, along with a Gaussian process copula to account for spatio-temporal dependence. A Gaussian Markov random field (GMRF) model is used to model the spatial effects on the node temperatures as the cooling changes take place. This model is then used to assess the condition of the node temperatures after each change to the room. The analysis approach was used to uncover the cause of a problematic episode of overheating nodes on one of the supercomputing clusters. Lastly, this same approach can easily be applied to monitor and investigate cooling systems at other data centers, as well.

  9. Incidence of metastasis in circumflex iliac nodes distal to the external iliac nodes in cervical cancer

    PubMed Central

    Okamoto, Kazuhira; Kato, Hidenori

    2016-01-01

    Objective A causal relationship between removal of circumflex iliac nodes distal to the external iliac nodes (CINDEIN) and lower leg edema has been recently suggested. The aim of this study was to elucidate the incidence of CINDEIN metastasis in cervical cancer. Methods A retrospective chart review was carried out for 531 patients with cervical cancer who underwent lymph node dissection between 1993 and 2014. CINDEIN metastasis was pathologically identified by microscopic investigation. After 2007, sentinel lymph node biopsy was performed selectively in patients with non-bulky cervical cancer. The sentinel node was identified using 99mTc-phytate and by scanning the pelvic cavity with a γ probe. Results Two hundred and ninety-seven patients (55.9%) underwent CINDEIN dissection and 234 (44.1%) did not. The percentage of International Federation of Gynecology and Obstetrics stage IIb to IV (42.4% vs. 23.5%, p<0.001) was significantly higher in patients who underwent CINDEIN dissection than those who did not. CINDEIN metastasis was identified in 1.9% overall and in 3.4% of patients who underwent CINDEIN dissection. For patients with stage Ia to IIa disease, CINDEIN metastasis was identified in 0.6% overall and in 1.2% of patients who underwent CINDEIN dissection. Of 115 patients with sentinel node mapping, only one (0.9%) had CINDEIN detected as a sentinel node. In this case, the other three lymph nodes were concurrently detected as sentinel lymph nodes. Conclusion CINDEIN dissection can be eliminated in patients with stage Ia to IIa disease. CINDEIN might not be regional lymph nodes in cervical cancer. PMID:27102250

  10. Superconductivity and Charge Density Wave in ZrTe3-xSex.

    PubMed

    Zhu, Xiangde; Ning, Wei; Li, Lijun; Ling, Langsheng; Zhang, Ranran; Zhang, Jinglei; Wang, Kefeng; Liu, Yu; Pi, Li; Ma, Yongchang; Du, Haifeng; Tian, Minglian; Sun, Yuping; Petrovic, Cedomir; Zhang, Yuheng

    2016-06-02

    Charge density wave (CDW), the periodic modulation of the electronic charge density, will open a gap on the Fermi surface that commonly leads to decreased or vanishing conductivity. On the other hand superconductivity, a commonly believed competing order, features a Fermi surface gap that results in infinite conductivity. Here we report that superconductivity emerges upon Se doping in CDW conductor ZrTe3 when the long range CDW order is gradually suppressed. Superconducting critical temperature Tc(x) in ZrTe3-xSex (0 ≤ x ≤ 0.1) increases up to 4 K plateau for 0.04 ≤ x ≤ 0.07. Further increase in Se content results in diminishing Tc and filametary superconductivity. The CDW modes from Raman spectra are observed in x = 0.04 and 0.1 crystals, where signature of ZrTe3 CDW order in resistivity vanishes. The electronic-scattering for high Tc crystals is dominated by local CDW fluctuations at high temperatures, the resistivity is linear up to highest measured T = 300 K and contributes to substantial in-plane anisotropy.

  11. Coherent energy scale revealed by ultrafast dynamics of UX3 (X = Al, Sn, Ga) single crystals

    NASA Astrophysics Data System (ADS)

    Nair, Saritha K.; Zhu, J.-X.; Sarrao, J. L.; Taylor, A. J.; Chia, Elbert E. M.

    2012-09-01

    The temperature dependence of relaxation dynamics of UX3 (X = Al, Ga, Sn) compounds is studied using the time-resolved pump-probe technique in reflectance geometry. For UGa3, our data are consistent with the formation of a spin density wave gap as evidenced from the quasidivergence of the relaxation time τ near the Néel temperature TN. For UAl3 and USn3, the relaxation dynamics shows a change from single-exponential to two-exponential behavior below a particular temperature, suggestive of coherence formation of the 5f electrons with the conduction band electrons. This particular temperature can be attributed to the spin fluctuation temperature Tsf, a measure of the strength of Kondo coherence. Our Tsf is consistent with other data such as resistivity and susceptibility measurements. The temperature dependence of the relaxation amplitude and time of UAl3 and USn3 were also fitted by the Rothwarf-Taylor model. Our results show that ultrafast optical spectroscopy is sensitive to c-f Kondo hybridization in the f-electron systems.

  12. BF3 x Et2O-mediated cascade cyclizations: synthesis of schweinfurthins F and G.

    PubMed

    Mente, Nolan R; Neighbors, Jeffrey D; Wiemer, David F

    2008-10-17

    The total synthesis of the natural stilbene (+)-schweinfurthin G (8) has been accomplished through a sequence based on an efficient cationic cascade cyclization. This cascade process is initiated by Lewis acid promoted ring opening of an epoxide and terminated through a novel reaction with a phenolic oxygen "protected" as its MOM ether. Several Lewis acids have been examined for their ability to induce this new reaction, and BF3 x Et2O was found to be the most effective. The only major byproduct under these conditions was one where the expected secondary alcohol was found as its MOM ether derivative (e.g., 30). While this byproduct could be converted to the original target compound through hydrolysis, it also could be employed as a protected alcohol to allow preparation of a benzylic phosphonate (43) without dehydration of the secondary alcohol. The resulting phosphonate was employed in a Horner-Wadsworth-Emmons condensation with an aldehyde representing the right half of the target compounds, an approach complementary to previous studies based on condensation of a right-half phosphonate and a left-half aldehyde.

  13. Electronic structures and geometries of the XF{sub 3} (X = Cl, Br, I, At) fluorides

    SciTech Connect

    Sergentu, Dumitru-Claudiu; Amaouch, Mohamed; Pilmé, Julien; Galland, Nicolas; Maurice, Rémi

    2015-09-21

    The potential energy surfaces of the group 17 XF{sub 3} (X = Cl, Br, I, At) fluorides have been investigated for the first time with multiconfigurational wave function theory approaches. In agreement with experiment, bent T-shaped C{sub 2v} structures are computed for ClF{sub 3}, BrF{sub 3}, and IF{sub 3}, while we predict that an average D{sub 3h} structure would be experimentally observed for AtF{sub 3}. Electron correlation and scalar relativistic effects strongly reduce the energy difference between the D{sub 3h} geometry and the C{sub 2v} one, along the XF{sub 3} series, and in the X = At case, spin-orbit coupling also slightly reduces this energy difference. AtF{sub 3} is a borderline system where the D{sub 3h} structure becomes a minimum, i.e., the pseudo-Jahn-Teller effect is inhibited since electron correlation and scalar-relativistic effects create small energy barriers leading to the global C{sub 2v} minima, although both types of effects interfere.

  14. Understanding the evolution of anomalous anharmonicity in Bi2Te3 -xSex

    NASA Astrophysics Data System (ADS)

    Tian, Yao; Jia, Shuang; Cava, R. J.; Zhong, Ruidan; Schneeloch, John; Gu, Genda; Burch, Kenneth S.

    2017-03-01

    The anharmonic effect in thermoelectrics has been a central topic for decades in both condensed matter physics and material science. However, despite the long-believed strong and complex anharmonicity in the Bi2Te3 -xSex series, experimental verification of anharmonicity and its evolution with doping remains elusive. We fill this important gap with high-resolution, temperature-dependent Raman spectroscopy in high-quality single crystals of Bi2Te3 , Bi2Te2Se , and Bi2Se3 over the temperature range from 4 to 293 K. Klemens's model was employed to explain the renormalization of their phonon linewidths. The phonon energies of Bi2Se3 and Bi2Te3 are analyzed in detail from three aspects: lattice expansion, cubic anharmonicity, and quartic anharmonicity. For the first time, we explain the evolution of anharmonicity in various phonon modes and across the series. In particular, we find that the interplay between cubic and quartic anharmonicity is governed by their distinct dependence on the phonon density of states, providing insights into anomalous anharmonicity designing of new thermoelectrics.

  15. Hydrodynamic Phase Locking in Mouse Node Cilia

    NASA Astrophysics Data System (ADS)

    Takamatsu, Atsuko; Shinohara, Kyosuke; Ishikawa, Takuji; Hamada, Hiroshi

    2013-06-01

    Rotational movement of mouse node cilia generates leftward fluid flow in the node cavity, playing an important role in left-right determination in the embryo. Although rotation of numerous cilia was believed necessary to trigger the determination, recent reports indicate the action of two cilia to be sufficient. We examine cooperative cilia movement via hydrodynamic interaction. Results show cilia to be cooperative, having phases locked in a certain relation; a system with a pair of nonidentical cilia can achieve phase-locked states more easily than one with a pair of identical cilia.

  16. Microfilaria in lymph node mimicking Kimura disease

    PubMed Central

    Jayalakshmy, PS; Pothen, Lillykutty; Letha, V; Sheeja, S

    2011-01-01

    In tropical and subtropical countries, parasitic infections are very rampant causing peripheral blood and or tissue eosinophilia. Here, a case of microfilaria in lymph node that produced intense eosinophil infiltrate is being reported. The dense eosinophil collection in the lymph node raised a possibility of Kimura's disease because no worms were seen in the initial sectioning of the tissue. Extensive sampling and diligent search revealed sections of microfilaria embedded in the eosinophil abscess along with foreign body giant cell reaction to its sheath material, leading to the correct diagnosis of this case. PMID:23508372

  17. Zn-Site Determination in Protein Encapsulated ZnxFe3-xO4 Nanoparticles

    SciTech Connect

    Pool, V. L.; Klem, M. T.; Holroyd, J.; Harris, T.; Arenholz, E.; Young, M.; Douglas, T.; Idzerda, Y. U.

    2008-10-01

    The X-ray absorption spectra of the Fe and Zn L-edges for 6.7 nm Fe{sub 3}O{sub 4} nanoparticles grown inside 12 nm ferritin protein cages with 10%, 15%, 20% and 33% zinc doping, shows that the Zn is substitutional as Zn{sup 2+} within the iron oxide host structure. A Neel-Arrhenius plot of the blocking temperature in the frequency dependent ac-susceptibility measurements show that the particles are non-interacting and that the anisotropy energy barrier is reduced with Zn loading. X-ray magnetic circular dichroism (XMCD) of the Fe displays a linear decrease with Zn-doping in sharp contrast to the initial increase present in the bulk system. The most plausible explanation for the moment decrease is that Zn substitutes preferentially into the tetrahedral A-site as a Zn{sup 2+} cation, generating a mixed spinel.

  18. Energy transfer and luminescence properties of Sr[1-3(x+y)/2]Al₂B₂O₇:xEu³⁺, yBi³⁺ phosphor.

    PubMed

    Cao, Renping; Liang, Tao; Li, Wensheng; Cao, Chunyan; Wen, Yufeng; Hu, Qianglin

    2015-07-05

    Sr[1-3(x+y)/2]Al2B2O7:xEu(3+), yBi(3+) (x=0-5 mol% and y=0-5 mol%) phosphors are synthesized by a solid-state reaction method in air, and their crystal structure, fluorescence lifetime, and luminescence properties are investigated. The optimal composition is determined to be (Sr0.94Eu0.03Bi0.01)Al2B2O7. The PLE band peaks within the range 200-550 nm are due to O(2-)→Eu(3+) charge transfer band, (7)F0→(5)H3, (5)D4, (5)L7, (5)L6, (5)D3, (5)D2, and (5)D1 transitions, respectively. The strongest PL band peak under excitation 394 nm light is at ∼615 nm owing to (5)D0→(7)F2 transition of Eu(3+) ion. The PL intensity of Eu(3+), Bi(3+) co-doped SrAl2B2O7 phosphor is 1.3 times that of Eu(3+) doped SrAl2B2O7 phosphor due to the energy transfer between Eu(3+) and Bi(3+) ions, which is explained by the energy level diagrams of Bi(3+) and Eu(3+) ions. The CIE chromaticity coordinates of Sr0.955Al2B2O7:0.03Eu(3+) and Sr0.94Al2B2O7:0.03Eu(3+), 0.01Bi(3+) phosphors under excitation 394 nm light are (x=0.6292, y=0.3702) and (x=0.6284, y=0.3711), respectively. These phosphors will be used as reddish orange emitting phosphor candidate for white LED with ∼394 nm near ultraviolet LED chip.

  19. A sequence of transformations related to the formation of M{sub 3}X{sub 2}-type superstructures

    SciTech Connect

    Gusev, A. I.

    2015-01-15

    A symmetry analysis of monoclinic, orthorhombic, and trigonal M{sub 3}X{sub 2}-type superstructures that can be formed in strongly stoichiometric MX{sub y} compounds with B1 structure is carried out. Channels of order-disorder transitions MX{sub y} → M{sub 3}X{sub 2} are determined. It is shown that, as temperature decreases, two physically admissible sequences of transformations associated with the formation of M{sub 3}X{sub 2} superstructures are possible in nonstoichiometric MX{sub y} compounds of group IV transition metals. By an example of vanadium carbide VC{sub y}, it is demonstrated that orthorhombic or monoclinic V{sub 3}C{sub 2} superstructures can be obtained with the formation of a nanostructure.

  20. Ferromagnetism and electronic structures of nonstoichiometric Heusler-alloy Fe3-xMnxSi Epilayers grown on Ge(111).

    PubMed

    Hamaya, K; Itoh, H; Nakatsuka, O; Ueda, K; Yamamoto, K; Itakura, M; Taniyama, T; Ono, T; Miyao, M

    2009-04-03

    For the study of ferromagnetic materials which are compatible with group-IV semiconductor spintronics, we demonstrate control of the ferromagnetic properties of Heusler-alloy Fe3-xMnxSi epitaxially grown on Ge(111) by tuning the Mn composition x. Interestingly, we obtain L2(1)-ordered structures even for nonstoichiometric atomic compositions. The Curie temperature of the epilayers with x approximately 0.6 exceeds 300 K. Theoretical calculations indicate that the electronic structures of the nonstoichiometric Fe3-xMnxSi alloys become half-metallic for 0.75 < or = x < or = 1.5. We discuss the possibility of room-temperature ferromagnetic Fe(3-x)Mn(x)Si/Ge epilayers with high spin polarization.

  1. In-situ observation of self-regulated switching behavior in WO{sub 3-x} based resistive switching devices

    SciTech Connect

    Hong, D. S.; Wang, W. X.; Chen, Y. S. Sun, J. R.; Shen, B. G.

    2014-09-15

    The transmittance of tungsten oxides can be adjusted by oxygen vacancy (V{sub o}) concentration due to its electrochromic property. Here, we report an in-situ observation of resistive switching phenomenon in the oxygen-deficient WO{sub 3-x} planar devices. Besides directly identifying the formation/rupture of dark-colored conductive filaments in oxide layer, the stripe-like WO{sub 3-x} device demonstrated self-regulated switching behavior during the endurance testing, resulting in highly consistent switching parameters after a stabilizing process. For very high V{sub o}s mobility was demonstrated in the WO{sub 3-x} film by the pulse experiment, we suggested that the electric-field-induced homogeneous migration of V{sub o}s was the physical origin for such unique switching characteristics.

  2. Simultaneous triple 914 nm, 1084 nm, and 1086 nm operation of a diode-pumped Nd:YVO4 laser

    NASA Astrophysics Data System (ADS)

    Lü, Yanfei; Xia, Jing; Liu, Huilong; Pu, Xiaoyun

    2014-10-01

    We report a diode-pumped continuous-wave (cw) triple-wavelength Nd:YVO4 laser operating at 914, 1084, and 1086 nm. A theoretical analysis has been introduced to determine the threshold conditions for simultaneous triple-wavelength laser. Using a T-shaped cavity, we realized an efficient triple-wavelength operation at 4F3/2→4I9/2 and 4F3/2→4I11/2 transitions for Nd:YVO4 crystal, simultaneously. At an absorbed pump power of 16 W (or 25 W of incident pump power), the maximum output power was 2.3 W, which included 914 nm, 1084 nm, and 1086 nm three wavelengths, and the optical conversion efficiency with respect to the absorbed pump power was 14.4%.

  3. Final report on the torque comparison EURAMET.M.T-S2, measurand torque: 10 N.m, 20 N.m, 40 N.m, 60 N.m, 80 N.m, and 100 N.m

    NASA Astrophysics Data System (ADS)

    Röske, Dirk

    2017-01-01

    The purpose of the EURAMET comparison EURAMET.M.T-S2 was to compare the measuring capabilities up to 100 N.m of a reference-type torque calibration machine of ZAG, Slovenia, with the torque standard machine of the Physikalisch-Technische Bundesanstalt (PTB, Braunschweig, Germany) acting as pilot laboratory. A very stable TT1 torque transducer with well-known properties and two torque measuring bridges was used as travelling standard. According to the technical protocol, torque steps of at least 10 N.m, 20 N.m, 40 N.m, 60 N.m, 80 N.m, and 100 N.m had to be measured both in clockwise and anticlockwise directions. For each of the torque steps and both senses of direction of the torque vector, En values were calculated. The results are in general in good agreement with the claimed measurement uncertainties except for the very first measurement at ZAG with additional support and four plate couplings. It seems to be sufficient in a vertical set-up (vertical torque axis) to use only two flexible couplings and there is no need for a further support between the transducers. The measurements with two couplings fulfill the requirement to the En value and support ZAG's claimed uncertainties of measurement. Main text To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCM, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA).

  4. Sub-70-nm pattern fabrication using an alternating phase-shifting mask in 157-nm lithography

    NASA Astrophysics Data System (ADS)

    Irie, Shigeo; Kanda, Noriyoshi; Watanabe, Kunio; Suganaga, Toshifumi; Itani, Toshiro

    2002-07-01

    In Selete, we have developed various resolution-enhancement technologies (RETs) such as the alternating phase shifting mask (alt-PSM), attenuated-PSM (att-PSM), and off-axis illumination (OAI). The alt-PSM, for example, reduces the k1 factor and extends the lithographic performance. A problem concerning the alt-PSM is the difference in the transmitted light intensities of the non-phase-shifting region and the phase-shifting region which can cause critical-dimension (CD) placement error. The transmitted light intensities of the two regions can be made equal by side-etching, in which the quartz (Qz) is undercut by wet-etching at the side of the transmitting region. We sought to optimize the mask structure in terms of a high numerical aperture (NA) through a simulation using two kinds of structures with a 157 nm exposure wavelength. The structures were a single-trench structure and a dual-trench structure, with each trench dug in the transmitting region. To attain a high NA (NA equals 0.85), we tried to optimize the parameters of the Cr film thickness, the amount of the undercut (side-etching), and the phase shift. The evaluated line pattern sizes were 70 nm (line/space size equals 70/70 nm, 70/140 nm, 70/210 nm, and 70/350 nm) and 50 nm (line/space size equals 50/50 nm, 50/100 nm, 50/150 nm, and 50/250 nm) at the wafer. Further, using the optimized mask, we calculated the lithographic margin of a sub 70 nm pattern through a simulation. For the 70 nm line patterns, we found that it will be difficult to fabricate precisely a 70 nm line patten using a mask with a single- trench structure. And we also found that the most suitable conditions for the dual-trench structure mask were a 90 nm undercut, a 100 nm Cr film thickness, and a 180 degree(s) phase shift. The exposure latitude at a depth of focus (DOF) of 0.3 micrometers , simulated using the optimized mask, was 5.3% for the 70/70 nm pattern, 3.6% for 70/140 nm 16.0% for 70/210 nm, and 29.3% for 70/350 nm. As the pitch

  5. International Lunar Network (ILN) Anchor Nodes

    NASA Technical Reports Server (NTRS)

    Cohen, Barbara A.

    2009-01-01

    This slide presentation reviews the United States' contribution to the International Lunar Network (ILN) project, the Anchor Nodes project. The ILN is an initiative of 9 national space agencies to establish a set of robotic geophysical monitoring stations on the surface of the Moon. The project is aimed at furthering the understanding of the lunar composition, and interior structure.

  6. Measure of Node Similarity in Multilayer Networks

    PubMed Central

    Mollgaard, Anders; Zettler, Ingo; Dammeyer, Jesper; Jensen, Mogens H.; Lehmann, Sune; Mathiesen, Joachim

    2016-01-01

    The weight of links in a network is often related to the similarity of the nodes. Here, we introduce a simple tunable measure for analysing the similarity of nodes across different link weights. In particular, we use the measure to analyze homophily in a group of 659 freshman students at a large university. Our analysis is based on data obtained using smartphones equipped with custom data collection software, complemented by questionnaire-based data. The network of social contacts is represented as a weighted multilayer network constructed from different channels of telecommunication as well as data on face-to-face contacts. We find that even strongly connected individuals are not more similar with respect to basic personality traits than randomly chosen pairs of individuals. In contrast, several socio-demographics variables have a significant degree of similarity. We further observe that similarity might be present in one layer of the multilayer network and simultaneously be absent in the other layers. For a variable such as gender, our measure reveals a transition from similarity between nodes connected with links of relatively low weight to dis-similarity for the nodes connected by the strongest links. We finally analyze the overlap between layers in the network for different levels of acquaintanceships. PMID:27300084

  7. Research sheds light on lymph node mystery.

    PubMed

    1996-01-01

    Researchers explain why so much HIV is found in the lymph nodes. The follicular dendritic cells act like flypaper to HIV and other pathogens. Once attracted, HIV is able to ambush critical immune cells, even in the presence of a vast excess of neutralizing antibodies. In the absence of follicular dendritic cells, similar quantities of neutralizing antibodies block HIV infectivity.

  8. Use of a Hybrid Edge Node-Centroid Node Approach to Thermal Modeling

    NASA Technical Reports Server (NTRS)

    Peabody, Hume L.

    2010-01-01

    A recent proposal submitted for an ESA mission required that models be delivered in ESARAD/ESATAN formats. ThermalDesktop was the preferable analysis code to be used for model development with a conversion done as the final step before delivery. However, due to some differences between the capabilities of the two codes, a unique approach was developed to take advantage of the edge node capability of ThermalDesktop while maintaining the centroid node approach used by ESARAD. In essence, two separate meshes were used: one for conduction and one for radiation. The conduction calculations were eliminated from the radiation surfaces and the capacitance and radiative calculations were eliminated from the conduction surfaces. The resulting conduction surface nodes were coincident with all nodes of the radiation surface and were subsequently merged, while the nodes along the edges remained free. Merging of nodes on the edges of adjacent surfaces provided the conductive links between surfaces. Lastly, all nodes along edges were placed into the subnetwork and the resulting supernetwork included only the nodes associated with radiation surfaces. This approach had both benefits and disadvantages. The use of centroid, surface based radiation reduces the overall size of the radiation network, which is often the most computationally intensive part of the modeling process. Furthermore, using the conduction surfaces and allowing ThermalDesktop to calculate the conduction network can save significant time by not having to manually generate the couplings. Lastly, the resulting GMM/TMM models can be exported to formats which do not support edge nodes. One drawback, however, is the necessity to maintain two sets of surfaces. This requires additional care on the part of the analyst to ensure communication between the conductive and radiative surfaces in the resulting overall network. However, with more frequent use of this technique, the benefits of this approach can far outweigh the

  9. IDIS Small Bodies and Dust Node

    NASA Astrophysics Data System (ADS)

    de Sanctis, M. C.; Capria, M. T.; Carraro, F.; Fonte, S.; Giacomini, L.; Turrini, D.

    2009-04-01

    The EuroPlaNet information service provides access to lists of researchers, laboratories and data archives relevant to many aspects of planetary and space physics. Information can be accessed through EuroPlaNet website or, for advanced searches, via web-services available at the different thematic nodes. The goal of IDIS is to provide easy-to-use access to resources like people, laboratories, modeling activities and data archives related to planetary sciences. The development of IDIS is an international effort started under the European Commission's 6th Framework Programme and which will expand its capabilities during the 7th Framework Programme, as part of the Capacities Specific Programme/Research Infrastructures. IDIS is complemented by a set of other EuroPlaNet web-services maintained under the responsibility of separate institutions. Each activity maintains its own web-portal with cross-links pointing to the other elements of EuroPlaNet. General access is provided via the EuroPlaNet Homepage. IDIS is not a repository of original data but rather supports the access to various data sources. The final goal of IDIS is to provide Virtual Observatory tools for the access to data from laboratory measurements and ground- and spaced-based observations to modeling results, allowing the combination of as divergent data sources as feasible. IDIS is built around four scientific nodes located in different European countries. Each node deals with a subset of the disciplines related to planetary sciences and, working in cooperation with international experts in these fields, provides a wealth of information to the international planetary science community. The EuroPlaNet IDIS thematic node "Small Bodies and Dust Node" is hosted by the Istituto di Fisica dello Spazio Interplanetario and is established in close cooperation with the Istituto di Astrofisica Spaziale. Both these institutes are part of the Istituto Nazionale di Astrofisica (INAF). The IDIS Small Bodies and Dust

  10. Sub-10 nm nanopantography

    SciTech Connect

    Tian, Siyuan Donnelly, Vincent M. E-mail: economou@uh.edu; Economou, Demetre J. E-mail: economou@uh.edu; Ruchhoeft, Paul

    2015-11-09

    Nanopantography, a massively parallel nanopatterning method over large areas, was previously shown to be capable of printing 10 nm features in silicon, using an array of 1000 nm-diameter electrostatic lenses, fabricated on the substrate, to focus beamlets of a broad area ion beam on selected regions of the substrate. In the present study, using lens dimensional scaling optimized by computer simulation, and reduction in the ion beam image size and energy dispersion, the resolution of nanopantography was dramatically improved, allowing features as small as 3 nm to be etched into Si.

  11. Fabrication of 10nm diameter carbon nanopores

    SciTech Connect

    Radenovic, Aleksandra; Trepagnier, Eliane; Csencsits, Roseann; Downing, Kenneth H; Liphardt, Jan

    2008-09-25

    The addition of carbon to samples, during imaging, presents a barrier to accurate TEM analysis, the controlled deposition of hydrocarbons by a focused electron beam can be a useful technique for local nanometer-scale sculpting of material. Here we use hydrocarbon deposition to form nanopores from larger focused ion beam (FIB) holes in silicon nitride membranes. Using this method, we close 100-200nm diameter holes to diameters of 10nm and below, with deposition rates of 0.6nm per minute. I-V characteristics of electrolytic flow through these nanopores agree quantitatively with a one dimensional model at all examined salt concentrations.

  12. Plasma immersion ion implantation for sub-22 nm node devices: FD-SOI and Tri-Gate

    SciTech Connect

    Duchaine, J.; Milesi, F.; Coquand, R.; Barraud, S.; Reboh, S.; Gonzatti, F.; Mazen, F.; Torregrosa, Frank

    2012-11-06

    Here, we present and discuss the electrical characteristics of fully depleted MOSFET transistors of planar and tridimensional architecture, doped by Plasma Immersion Ion Implantation (PIII) or Beam Line Ion Implantation (BLII). Both techniques delivered similar and satisfactory results in considering the planar architecture. For tri-dimensional Tri-Gate transistors, the results obtained with PIII are superior.

  13. Reliable gate stack and substrate parameter extraction based on C-V measurements for 14 nm node FDSOI technology

    NASA Astrophysics Data System (ADS)

    Mohamad, B.; Leroux, C.; Rideau, D.; Haond, M.; Reimbold, G.; Ghibaudo, G.

    2017-02-01

    Effective work function and equivalent oxide thickness are fundamental parameters for technology optimization. In this work, a comprehensive study is done on a large set of FDSOI devices. The extraction of the gate stack parameters is carried out by fitting experimental CV characteristics to quantum simulation, based on self-consistent solution of one dimensional Poisson and Schrodinger equations. A reliable methodology for gate stack parameters is proposed and validated. This study identifies the process modules that impact directly the effective work function from those that only affect the device threshold voltage, due to the device architecture. Moreover, the relative impacts of various process modules on channel thickness and gate oxide thickness are evidenced.

  14. Iterative resource allocation based on propagation feature of node for identifying the influential nodes

    NASA Astrophysics Data System (ADS)

    Zhong, Lin-Feng; Liu, Jian-Guo; Shang, Ming-Sheng

    2015-10-01

    The identification of the influential nodes in networks is one of the most promising domains. In this paper, we present an improved iterative resource allocation (IIRA) method by considering the centrality information of neighbors and the influence of spreading rate for a target node. Comparing with the results of the Susceptible Infected Recovered (SIR) model for four real networks, the IIRA method could identify influential nodes more accurately than the tradition IRA method. Specially, in the Erdös network, Kendall's tau could be enhanced 23% when the spreading rate is 0.12. In the Protein network, Kendall's tau could be enhanced 24% when the spreading rate is 0.08.

  15. Sentinel Lymph Node Mapping of Liver

    PubMed Central

    Wada, Hideyuki; Hyun, Hoon; Vargas, Christina; Genega, Elizabeth M.; Gravier, Julien; Gioux, Sylvain; Frangioni, John V.; Choi, Hak Soo

    2015-01-01

    Background Although the sentinel lymph nodes (SLN) hypothesis has been applied to many tissues and organs, liver has remained unstudied. At present, it is unclear whether hepatic SLNs even exist. If so, they could alter management in intrahepatic cholangiocarcinoma and other hepatic malignancies by minimizing the extent of surgery while still providing precise nodal staging. We investigated whether invisible yet tissue-penetrating near-infrared (NIR) fluorescent light can provide simultaneous identification of both the sentinel lymph node (SLN) and all other regional lymph nodes (RLN) in the liver. Method In twenty five Yorkshire pigs, we determined whether SLNs exist in liver, and compared the effectiveness of two clinically available NIR fluorophores, methylene blue (MB) and indocyanine green (ICG), and two novel NIR fluorophores previously described by our group, ESNF14 and ZW800-3C, for SLN and RLN mapping. Results ESNF14 showed the highest signal-to-background ratio (SBR) and longest retention time in SLNs, without leakage to second-tier lymph nodes. ICG had apparent leakage to second-tier nodes, while ZW800-3C suffered from poor migration after intraparenchymal injection. However, when injected intravenously, ZW800-3C was able to highlight all RLNs in liver over a 4–6 h period. Simultaneous dual channel imaging of SLN (ESNF14) and RLN (ZW800-3C) permitted unambiguous identification and image-guided resection of SLNs and RLNs in liver. Conclusion The NIR imaging technology enables real-time intraoperative identification of SLNs and RLNs in the liver of swine. If these results are confirmed in patients, new strategies for the surgical management of intrahepatic malignancies should be possible. PMID:25968620

  16. Coupling with a narrow-band-gap semiconductor for the enhancement of visible-light photocatalytic activity: preparation of Bi2OxS3-x/Nb6O17 and application to the degradation of methyl orange.

    PubMed

    Yan, Gang; Shi, Hongfei; Tan, Huaqiao; Zhu, Wanbin; Wang, Yonghui; Zang, Hongying; Li, Yangguang

    2016-09-21

    A series of 2D sheet Bi2OxS3-x/Nb6O17 (Bi/Nb) heterostructure photocatalysts were synthesized through a facile hydrothermal vulcanization method between Bi(3+) exchanged K4Nb6O17 and thiourea (NH2CSNH2). XRD results confirm that the heterostructures were composed of Bi2OxS3-x and Nb6O17. HRTEM indicates that Bi2OxS3-x was successfully intercalated into layers of K4Nb6O17. Such large interfacial contacts can be beneficial to the transfer and separation of photogenerated charge carriers. Thus the composites exhibit good photocatalytic performance for the degradation of methyl orange (MO) under visible light irradiation (λ > 400 nm), which is superior to that of both precursors, pure Bi2S3 and K4Nb6O17. Radical capture tests reveal that photogenerated holes h(+) and ˙O2(-) play important roles in the photodegradation of MO. And based on the UV-visible diffuse reflectance spectra (DRS) and the band gap of the semiconductors, the mechanism of the enhanced visible light photocatalytic activity of these composites has been proposed.

  17. Structural and superconducting properties of co-doped YBa2-xLaxCu3-xMxOz and La-free YBa2Cu3-xMxOz (M = Al, Zn) high-TC superconductors

    NASA Astrophysics Data System (ADS)

    Hao, S. J.; Jin, W. T.; Guo, C. Q.; Zhang, H.

    2012-05-01

    Two co-doped high-Tc superconducting systems, YBa2-xLaxCu3-xAlxOz and YBa2-xLaxCu3-xZnxOz (0 ⩽ x ⩽ 0.3), both of which have not been reported up to the present, were synthesized. The structural and superconducting properties have been investigated by X-ray diffraction (XRD) and DC magnetization measurement. Comparing the properties of these co-doped systems with single-doped systems YBa2Cu3-xAlxOz and YBa2Cu3-xZnxOz, it shows that in the Al-single-doped YBCO system, the depression of the critical temperature (Tc) with doping is stronger than that in (La, Al)-co-doped system, however, in the Zn-single-doped system, the Tc descends slower than that in (La, Zn)-co-doped system. This is possibly due to the opposite change of the distance between the Ba site and the CuO2 plane induced by the La doping. Besides, the La doping has another effect of improving the solid solubility compared with the Al- or Zn-single-doped system.

  18. Gallup, NM, CARE Grant Success Story

    EPA Pesticide Factsheets

    A CARE Grant, Level II award, was made to Gallup, NM to focus on cleaning up the waste stream, reuse and recycling of materials, and reclaiming land for these purposes through outreach, education and organization.

  19. Recent progress in 193-nm antireflective coatings

    NASA Astrophysics Data System (ADS)

    Meador, James D.; Guerrero, Douglas J.; Xu, Gu; Shao, Xie; Dobson, Norman; Claypool, James B.; Nowak, Kelly A.

    1999-06-01

    This paper presents the chemistries and properties of organic, spin-on, bottom antireflective coatings (BARCs) that are designed for 193 nm lithography. All of the BARCs are thermosetting and use dye-attached/incorporated polymers. A first generation product, NEXT, will soon be commercialized. NEXT is built form i-line and deep-UV chemistries with the polymeric constituent being a substitute novolac. This product provide outstanding resolution of 0.16 micrometers L/S with several 193 nm photoresists. Second generation chemical platforms under study include acrylics, polyesters, and polyethers with the 193 nm absorbing chromophore being an aromatic function. The performance of selected BARCs from the four platforms is described, including: optical properties, 193 nm litho, plasma etch rates, Prolith modeling data, spin-bowl and waste line compatibility, and ambient stability.

  20. Dirac-node arc in the topological line-node semimetal HfSiS

    NASA Astrophysics Data System (ADS)

    Takane, D.; Wang, Zhiwei; Souma, S.; Nakayama, K.; Trang, C. X.; Sato, T.; Takahashi, T.; Ando, Yoichi

    2016-09-01

    We have performed angle-resolved photoemission spectroscopy on HfSiS, which has been predicted to be a topological line-node semimetal with square Si lattice. We found a quasi-two-dimensional Fermi surface hosting bulk nodal lines, alongside the surface states at the Brillouin-zone corner exhibiting a sizable Rashba splitting and band-mass renormalization due to many-body interactions. Most notably, we discovered an unexpected Dirac-like dispersion extending one dimensionally in k space—the Dirac-node arc—near the bulk node at the zone diagonal. These novel Dirac states reside on the surface and could be related to hybridizations of bulk states, but currently we have no explanation for its origin. This discovery poses an intriguing challenge to the theoretical understanding of topological line-node semimetals.

  1. Atomic scale oxidation of a complex system: O2/alpha-SiC(0001)-( 3 x 3).

    PubMed

    Amy, F; Enriquez, H; Soukiassian, P; Storino, P F; Chabal, Y J; Mayne, A J; Dujardin, G; Hwu, Y K; Brylinski, C

    2001-05-07

    The atomic scale oxidation of the alpha-SiC(0001)-(3 x 3) surface is investigated by atom-resolved scanning tunneling microscopy, core level synchrotron radiation based photoemission spectroscopy, and infrared absorption spectroscopy. The results reveal that the initial oxidation takes place through the relaxation of lower layers, away from the surface dangling bond, in sharp contrast to silicon oxidation.

  2. DHA Improves Cognition and Prevents Dysfunction of Entorhinal Cortex Neurons in 3xTg-AD Mice

    PubMed Central

    Arsenault, Dany; Julien, Carl; Tremblay, Cyntia; Calon, Frédéric

    2011-01-01

    Defects in neuronal activity of the entorhinal cortex (EC) are suspected to underlie the symptoms of Alzheimer's disease (AD). Whereas neuroprotective effects of docosahexaenoic acid (DHA) have been described, the effects of DHA on the physiology of EC neurons remain unexplored in animal models of AD. Here, we show that DHA consumption improved object recognition (↑12%), preventing deficits observed in old 3xTg-AD mice (↓12%). Moreover, 3xTg-AD mice displayed seizure-like akinetic episodes, not detected in NonTg littermates and partly prevented by DHA (↓50%). Patch-clamp recording revealed that 3xTg-AD EC neurons displayed (i) loss of cell capacitance (CC), suggesting reduced membrane surface area; (ii) increase of firing rate versus injected current (F-I) curve associated with modified action potentials, and (iii) overactivation of glutamatergic synapses, without changes in synaptophysin levels. DHA consumption increased CC (↑12%) and decreased F-I slopes (↓21%), thereby preventing the opposite alterations observed in 3xTg-AD mice. Our results indicate that cognitive performance and basic physiology of EC neurons depend on DHA intake in a mouse model of AD. PMID:21383850

  3. Validation of the Actigraph GT3X and ActivPAL Accelerometers for the Assessment of Sedentary Behavior

    ERIC Educational Resources Information Center

    Kim, Youngdeok; Barry, Vaughn W.; Kang, Minsoo

    2015-01-01

    This study examined (a) the validity of two accelerometers (ActiGraph GT3X [ActiGraph LLC, Pensacola, FL, USA] and activPAL [PAL Technologies Ltd., Glasgow, Scotland]) for the assessment of sedentary behavior; and (b) the variations in assessment accuracy by setting minimum sedentary bout durations against a proxy for direct observation using an…

  4. Efficient Tailoring of Upconversion Selectivity by Engineering Local Structure of Lanthanides in Na(x)REF(3+x) Nanocrystals.

    PubMed

    Dong, Hao; Sun, Ling-Dong; Wang, Ye-Fu; Ke, Jun; Si, Rui; Xiao, Jia-Wen; Lyu, Guang-Ming; Shi, Shuo; Yan, Chun-Hua

    2015-05-27

    Efficient tailoring of upconversion emissions in lanthanide-doped nanocrystals is of great significance for extended optical applications. Here, we present a facile and highly effective method to tailor the upconversion selectivity by engineering the local structure of lanthanides in Na(x)REF(3+x) nanocrystals. The local structure engineering was achieved through precisely tuning the composition of nanocrystals, with different [Na]/[RE] ([F]/[RE]) ratio. It was found that the lattice parameter as well as the coordination number and local symmetry of lanthanides changed with the composition. A significant difference in the red to green emission ratio, which varied from 1.9 to 71 and 1.6 to 116, was observed for Na(x)YF(3+x):Yb,Er and Na(x)GdF(3+x):Yb,Er nanocrystals, respectively. Moreover, the local structure-dependent upconversion selectivity has been verified for Na(x)YF(3+x):Yb,Tm nanocrystals. In addition, the local structure induced upconversion emission from Er(3+) enhanced 9 times, and the CaF2 shell grown epitaxially over the nanocrystals further promoted the red emission by 450 times, which makes it superior as biomarkers for in vivo bioimaging. These exciting findings in the local structure-dependent upconversion selectivity not only offer a general approach to tailoring lanthanide related upconversion emissions but also benefit multicolor displays and imaging.

  5. Occupational Survey Report, AFSC 2A3X1, A-10/F-15/U-2 Avonics Systems

    DTIC Science & Technology

    2006-05-31

    specific data – Did not evaluate electronics principles section of STS • STS is generally supported by survey data – Seven STS items were unsupported... electronics principles section of STS for possible references 27 2A3X1 Percent Members Performing Unit Learning Objective Prof Code

  6. Thermo-Elastic and Lattice Dynamical Properties of Pd3X (X = Ti, Zr, Hf) Alloys: An Ab Initio Study

    NASA Astrophysics Data System (ADS)

    Surucu, G.; Colakoglu, K.; Ciftci, Y. O.; Ozisik, H. B.; Deligoz, E.

    2015-12-01

    Using the generalized-gradient approximation (GGA) based on density functional theory, we have reported the structural, mechanical, electronic, and lattice dynamical properties of the intermetallic compounds Pd3X (X = Ti, Zr, Hf) with D024 and the L12 structures. The elastic constants were predicted using the stress-finite strain technique. We performed numerical estimations of the bulk modulus, shear modulus, Young's modulus, Poisson's ratio anisotropy factor, G/ B ratio, and hardness. Our studies have showed that all Pd3X (X = Ti, Zr, Hf) with D024 and the L12 structures are mechanically stable and relatively hard materials with low compressibility, and they could be considered as ductile systems. Also, the phonon dispersion curves and total and partial density of states were calculated and discussed for Pd3X (X = Ti, Zr, Hf). We finally estimated some thermodynamic properties such as entropy, free energy, and heat capacity at the temperature range 0-1000 K. The calculated phonon frequencies of Pd3X (X = Ti, Zr, Hf) are positive, indicating the dynamical stability of the studied compounds. For the first time, we have performed the numerical estimation of lattice dynamical properties for the compounds and still awaits experimental confirmation. The obtained ground state properties are in good agreement with those of experimental and theoretical studies.

  7. Growth and characterization of molecular beam epitaxy-grown Bi2Te3-xSex topological insulator alloys

    NASA Astrophysics Data System (ADS)

    Tung, Y.; Chiang, Y. F.; Chong, C. W.; Deng, Z. X.; Chen, Y. C.; Huang, J. C. A.; Cheng, C.-M.; Pi, T.-W.; Tsuei, K.-D.; Li, Z.; Qiu, H.

    2016-02-01

    We report a systematic study on the structural and electronic properties of Bi2Te3-xSex topological insulator alloy grown by molecular beam epitaxy (MBE). A mixing ratio of Bi2Se3 to Bi2Te3 was controlled by varying the Bi:Te:Se flux ratio. X-ray diffraction and Raman spectroscopy measurements indicate the high crystalline quality for the as-grown Bi2Te3-xSex films. Substitution of Te by Se is also revealed from both analyses. The surfaces of the films exhibit terrace-like quintuple layers and their size of the characteristic triangular terraces decreases monotonically with increasing Se content. However, the triangular terrace structure gradually recovers as the Se content further increases. Most importantly, the angle-resolved photoemission spectroscopy results provide evidence of single-Dirac-cone like surface states in which Bi2Te3-xSex with Se/Te-substitution leads to tunable surface states. Our results demonstrate that by fine-tuned MBE growth conditions, Bi2Te3-xSex thin film alloys with tunable topological surface states can be obtained, providing an excellent platform for exploring the novel device applications based on this compound.

  8. Research on Critical Nodes Algorithm in Social Complex Networks

    NASA Astrophysics Data System (ADS)

    Wang, Xue-Guang

    2017-01-01

    Discovering critical nodes in social networks has many important applications and has attracted more and more institutions and scholars. How to determine the K critical nodes with the most influence in a social network is a NP (define) problem. Considering the widespread community structure, this paper presents an algorithm for discovering critical nodes based on two information diffusion models and obtains each node's marginal contribution by using a Monte-Carlo method in social networks. The solution of the critical nodes problem is the K nodes with the highest marginal contributions. The feasibility and effectiveness of our method have been verified on two synthetic datasets and four real datasets.

  9. Fabrication of sub-10 nm metal nanowire arrays with sub-1 nm critical dimension control

    NASA Astrophysics Data System (ADS)

    Pi, Shuang; Lin, Peng; Xia, Qiangfei

    2016-11-01

    Sub-10 nm metal nanowire arrays are important electrodes for building high density emerging ‘beyond CMOS’ devices. We made Pt nanowire arrays with sub-10 nm feature size using nanoimprint lithography on silicon substrates with 100 nm thick thermal oxide. We further studied the critical dimension (CD) evolution in the fabrication procedure and achieved 0.4 nm CD control, providing a viable solution to the imprint lithography CD challenge as specified by the international technology roadmap for semiconductors. Finally, we fabricated Pt/TiO2/Pt memristor crossbar arrays with the 8 nm electrodes, demonstrating great potential in dimension scaling of this emerging device.

  10. Boson localization and universality in YBa2Cu(3-x)M(x)O(7-delta)

    NASA Technical Reports Server (NTRS)

    Kallio, A.; Apaja, V.; Poykko, S.

    1995-01-01

    We consider a two component mixture of charged fermions on neutralizing background with all sign combinations and arbitrarily small mass ratios. In the two impurity limit for the heavier component we show that the pair forms a bound state for all charge combinations. In the lowest order approximation we derive a closed form expression Veff(r) for the binding potential which has short-range repulsion followed by attraction. In the classical limit, when the mass of embedded particles is large m2 much greater than m, we can calculate from Veff(r) also the cohesive energy E and the bond length R of a metallic crystal such as lithium. The lowest order result is R = 3.1 A, E = -0.9 eV, not entirely different from the experimental result for lithium metal. The same interaction for two holes on a parabolic band with m2 greater than m gives the quantum mechanical bound state which one may interpret as a boson or local pair in the case of high-Te and heavy fermion superconductors. We also show that for compounds of the type YBa2Cu(3 - x)M(x)O(7 - delta) one can understand most of the experimental results for the superconducting and normal states with a single temperature dependent boson breaking function f(T) for each impurity content x governing the decay of bosons into pairing fermions. In the normal state f(T) turns out to be a linear, universal function, independent of the impurity content I and the oxygen content delta. We predict with universality a depression in Tc(x) with slight down bending in agreement with experiment. As a natural consequence of the model the bosons become localized slightly above Tc due to the Wigner crystallization, enhanced with lattice local field minima. The holes remain delocalized with a linearly increasing concentration in the normal state, thus explaining the rising Hall density. The boson localization temperature T(sub BL) shows up as a minimum in the Hall density R(sub ab)(exp -1). We also give explanation for very recently observed

  11. Prognostic role of the lymph node ratio in node positive colorectal cancer: a meta-analysis

    PubMed Central

    Chi, Jun-Lin; Li, Yuan; Yang, Lie; Yu, Yong-Yang; Sun, Xiao-Feng; Zhou, Zong-Guang

    2016-01-01

    The lymph node ratio (LNR) (i.e. the number of metastatic lymph nodes divided by the number of totally resected lymph nodes) has recently emerged as an important prognostic factor in colorectal cancer (CRC). However, the tumor node metastasis (TNM) staging system for colorectal cancer does not consider it as a prognostic parameter. Therefore, we conducted a meta-analysis to evaluate the prognostic role of the LNR in node positive CRC. A systematic search was performed in PubMed, Embase and the Cochrane Library for relevant studies up to November 2015. As a result, a total of 75,838 node positive patients in 33 studies were included in this meta-analysis. Higher LNR was significantly associated with shorter overall survival (OS) (HR = 1.91; 95% CI 1.71–2.14; P = 0.0000) and disease free survival (DFS) (HR = 2.75; 95% CI: 2.14–3.53; P = 0.0000). Subgroup analysis showed similar results. Based on these results, LNR was an independent predictor of survival in colorectal cancer patients and should be considered as a parameter in future oncologic staging systems. PMID:27662659

  12. Quantitative photoacoustic assessment of ex-vivo lymph nodes of colorectal cancer patients

    NASA Astrophysics Data System (ADS)

    Sampathkumar, Ashwin; Mamou, Jonathan; Saegusa-Beercroft, Emi; Chitnis, Parag V.; Machi, Junji; Feleppa, Ernest J.

    2015-03-01

    Staging of cancers and selection of appropriate treatment requires histological examination of multiple dissected lymph nodes (LNs) per patient, so that a staggering number of nodes require histopathological examination, and the finite resources of pathology facilities create a severe processing bottleneck. Histologically examining the entire 3D volume of every dissected node is not feasible, and therefore, only the central region of each node is examined histologically, which results in severe sampling limitations. In this work, we assess the feasibility of using quantitative photoacoustics (QPA) to overcome the limitations imposed by current procedures and eliminate the resulting under sampling in node assessments. QPA is emerging as a new hybrid modality that assesses tissue properties and classifies tissue type based on multiple estimates derived from spectrum analysis of photoacoustic (PA) radiofrequency (RF) data and from statistical analysis of envelope-signal data derived from the RF signals. Our study seeks to use QPA to distinguish cancerous from non-cancerous regions of dissected LNs and hence serve as a reliable means of imaging and detecting small but clinically significant cancerous foci that would be missed by current methods. Dissected lymph nodes were placed in a water bath and PA signals were generated using a wavelength-tunable (680-950 nm) laser. A 26-MHz, f-2 transducer was used to sense the PA signals. We present an overview of our experimental setup; provide a statistical analysis of multi-wavelength classification parameters (mid-band fit, slope, intercept) obtained from the PA signal spectrum generated in the LNs; and compare QPA performance with our established quantitative ultrasound (QUS) techniques in distinguishing metastatic from non-cancerous tissue in dissected LNs. QPA-QUS methods offer a novel general means of tissue typing and evaluation in a broad range of disease-assessment applications, e.g., cardiac, intravascular

  13. Lymph Node Dissection for Differentiated Thyroid Cancer

    PubMed Central

    Mizrachi, Aviram; Shaha, Ashok R.

    2017-01-01

    Lymph node metastases in differentiated thyroid cancer (DTC) have a wide spectrum of clinical significance. Several variables are taken under consideration when trying to decide on the optimal management of patients with DTC. Routine prophylactic central and/or lateral lymph node dissection is not advocated with exception of central neck dissection for locally advanced tumors. When regarding recurrent disease, foundations have been laid for clinicians to make accurate decisions as to when to perform surgery and when to continue maintaining the patient’s disease under observation. These complex decisions are determined based upon multiple factors, not only regarding the patient’s disease but also the patient’s comprehension of the procedure and apprehension levels. Nevertheless if the patient and/or clinician are emotionally keen to surgically remove the disease then the procedure should be considered. PMID:28117285

  14. Harmony Node 2 in Shuttle Cargo Bay

    NASA Technical Reports Server (NTRS)

    2007-01-01

    Back dropped by Earth's horizon and the blackness of space, the Italian-built U.S. Node 2, Harmony, is featured in Space Shuttle Discovery's cargo bay during the STS-120 mission. This image was photographed by an Expedition 16 crew member on the International Space Station (ISS) while Discovery was docked with the station. The aluminum node is 7.2 meters (23.6 feet) long and 4.4 meters (14.5 feet) in diameter. Its pressurized volume is 75.5 cubic meters (2666 cubic feet), and its launch weight is approximately 14,288 kilograms (31,500 pounds). The installation of Harmony increases the living and working space inside the station to approximately 500 cubic meters (18,000 cubic feet). It also allows the addition of international laboratories from Europe and Japan to the station.

  15. [Lymphosarcoma of abdominal lymph nodes in children].

    PubMed

    Kvirikashvili, T O

    2006-01-01

    We investigated 79 patients (76.0%) with lymphosarcoma of abdominal lymph nodes among all 104 with general abdominal lymphosarcoma. Ultrasound tomography was used in 98.1 % cases; also, in the urgent cases cancer transcutaneal puncture was performed with the purpose of cytological investigation. In complicated situations computer tomography was considered as a highly informative method of investigation. Surgical intervention and radial therapy is inexpedient in a treatment program of lymphosarcoma of abdominal lymph nodes in children. Besides, it is shown the superiority of intensive program of polychemical therapy OMDV: vincristine (oncovin) -- 1.5 mg/m(2) i/v in the 1 day; metotrexate -- 250 mg/m(2) i/v drop by drop in the I day; dexamethazone 10 mg/m(2) per os 1-5 day; vepesid -- 100 mg/m(2) i/v drop by drop in the 4 and 5 days.) in comparison with the ACOP scheme: adriamicine or rubomicine - 30 mg/m(2) i/v 1 time in week (N 4-6); cyclophosphane -- 600 mg/m(2) i/v 1 time in week (N 4-6); vincristine (oncovin) -- 1.4 mg/m(2) i/v 1 time in week (N 4-6); prednisolone -- 40 mg/m(2) every day 4-6 week quitting gradually) for treatment of lymphosarcoma of abdominal lymph nodes in childhood age. General recovery without recurrence in children with lymphosarcoma of abdominal lymph nodes was occurred in 44.2% cases. In the case of polychemical therapy according to ACOP scheme, recovery was 20% and in the case of polychemical therapy following OMDV scheme, 78.1% of the children recovered.

  16. FAWN: A Fast Array of Wimpy Nodes

    DTIC Science & Technology

    2008-05-01

    MapReduce : Simplified Data Processing on Large Clusters . [8] G. DeCandia, D. Hastorun, M. Jampani, G. Kakulapati, A. Lakshman, A. Pilchin, S. Siva...for public release; distribution unlimited 13. SUPPLEMENTARY NOTES 14. ABSTRACT This paper introduces the FAWN?Fast Array of Wimpy Nodes? cluster ...for the specific, but important, class of primary-key, seek-bound applications that perform a large number of retrievals of small data objects. A few

  17. Vulnerability of critical infrastructures : identifying critical nodes.

    SciTech Connect

    Cox, Roger Gary; Robinson, David Gerald

    2004-06-01

    The objective of this research was the development of tools and techniques for the identification of critical nodes within critical infrastructures. These are nodes that, if disrupted through natural events or terrorist action, would cause the most widespread, immediate damage. This research focuses on one particular element of the national infrastructure: the bulk power system. Through the identification of critical elements and the quantification of the consequences of their failure, site-specific vulnerability analyses can be focused at those locations where additional security measures could be effectively implemented. In particular, with appropriate sizing and placement within the grid, distributed generation in the form of regional power parks may reduce or even prevent the impact of widespread network power outages. Even without additional security measures, increased awareness of sensitive power grid locations can provide a basis for more effective national, state and local emergency planning. A number of methods for identifying critical nodes were investigated: small-world (or network theory), polyhedral dynamics, and an artificial intelligence-based search method - particle swarm optimization. PSO was found to be the only viable approach and was applied to a variety of industry accepted test networks to validate the ability of the approach to identify sets of critical nodes. The approach was coded in a software package called Buzzard and integrated with a traditional power flow code. A number of industry accepted test networks were employed to validate the approach. The techniques (and software) are not unique to power grid network, but could be applied to a variety of complex, interacting infrastructures.

  18. Scheduling applications for execution on a plurality of compute nodes of a parallel computer to manage temperature of the nodes during execution

    DOEpatents

    Archer, Charles J; Blocksome, Michael A; Peters, Amanda E; Ratterman, Joseph D; Smith, Brian E

    2012-10-16

    Methods, apparatus, and products are disclosed for scheduling applications for execution on a plurality of compute nodes of a parallel computer to manage temperature of the plurality of compute nodes during execution that include: identifying one or more applications for execution on the plurality of compute nodes; creating a plurality of physically discontiguous node partitions in dependence upon temperature characteristics for the compute nodes and a physical topology for the compute nodes, each discontiguous node partition specifying a collection of physically adjacent compute nodes; and assigning, for each application, that application to one or more of the discontiguous node partitions for execution on the compute nodes specified by the assigned discontiguous node partitions.

  19. 810nm, 980nm, 1470nm and 1950nm diode laser comparison: a preliminary "ex vivo" study on oral soft tissues

    NASA Astrophysics Data System (ADS)

    Fornaini, Carlo; Merigo, Elisabetta; Sozzi, Michele; Selleri, Stefano; Vescovi, Paolo; Cucinotta, Annamaria

    2015-02-01

    The introduction of diode lasers in dentistry has several advantages, mainly consisting on the reduced size, reduced cost and possibility to beam delivering by optical fibers. At the moment the two diode wavelengths normally utilized in the dental field are 810 and 980 nm for soft tissues treatments. The aim of this study was to compare the efficacy of four different diode wavelengths: 810, 980, 1470 and 1950 nm diode laser for the ablation of soft tissues. Several samples of veal tongue were exposed to the four different wavelengths, at different fluences. The internal temperature of the soft tissues, in the area close to the beam, was monitored with thermocouple during the experiment. The excision quality of the exposed samples have been characterized by means of an optical microscope. Tissue damages and the cut regularity have been evaluated on the base of established criteria. The lowest thermal increase was recorded for 1950 nm laser. Best quality and speed of incision were obtained by the same wavelength. By evaluating epithelial, stromal and vascular damages for all the used wavelengths, the best result, in terms of "tissue respect", have been obtained for 1470 and 1950 nm exposures. From the obtained results 1470 and 1950 nm diode laser showed to be the best performer wavelengths among these used in this "ex vivo" study, probably due to their greatest affinity to water.

  20. Radiation Failures in Intel 14nm Microprocessors

    NASA Technical Reports Server (NTRS)

    Bossev, Dobrin P.; Duncan, Adam R.; Gadlage, Matthew J.; Roach, Austin H.; Kay, Matthew J.; Szabo, Carl; Berger, Tammy J.; York, Darin A.; Williams, Aaron; LaBel, K.; Ingalls, James D.

    2016-01-01

    In this study the 14 nm Intel Broadwell 5th generation core series 5005U-i3 and 5200U-i5 was mounted on Dell Inspiron laptops, MSI Cubi and Gigabyte Brix barebones and tested with Windows 8 and CentOS7 at idle. Heavy-ion-induced hard- and catastrophic failures do not appear to be related to the Intel 14nm Tri-Gate FinFET process. They originate from a small (9 m 140 m) area on the 32nm planar PCH die (not the CPU) as initially speculated. The hard failures seem to be due to a SEE but the exact physical mechanism has yet to be identified. Some possibilities include latch-ups, charge ion trapping or implantation, ion channels, or a combination of those (in biased conditions). The mechanism of the catastrophic failures seems related to the presence of electric power (1.05V core voltage). The 1064 nm laser mimics ionization radiation and induces soft- and hard failures as a direct result of electron-hole pair production, not heat. The 14nm FinFET processes continue to look promising for space radiation environments.

  1. PDS Lunar Data Node - Apollo Data Restoration

    NASA Astrophysics Data System (ADS)

    Schultz, Alfred B.; Williams, D. R.; Guinness, E. A.

    2009-01-01

    The Lunar Data Node (LDN) was formed under the auspices of the Planetary Data System (PDS) Geosciences (GEO) Node to restore selected Apollo data sets to a modern format. The Apollo lunar missions returned a wealth of information, including long-term (1969-1977) surface data collected by autonomous ALSEP (Apollo Lunar Surface Experiment Package) stations emplaced by the crews of the Apollo 12, 14, 15, 16, and 17 missions, surface point measurements, and orbital data. Much of the ALSEP and other surface and orbital data housed at NSSDC are in forms which are not readily usable, such as microfilm, hardcopy, and magnetic tapes with older, seldom-used formats. The LDN is prioritizing these data based on their scientific and engineering value for hazard and resource assessment and the level of effort required for archiving. Data from three experiments, X-Ray Spectrometer (XRS), Cold Cathode Ion Gage (CCIG), and Solar Wind Spectrometer (SWS), comprising eight unique data sets, have been restored and are in peer review process. The CCIG data have completed peer review and have been delivered to PDS GEO Node. We will report on progress made and plans for future data restorations.

  2. Hybrid tracers for sentinel node biopsy.

    PubMed

    Van Den Berg, N S; Buckle, T; Kleinjan, G I; Klop, W M; Horenblas, S; Van Der Poel, H G; Valdés-Olmos, R A; Van Leeuwen, F I

    2014-06-01

    Conventional sentinel node (SN) mapping is performed by injection of a radiocolloid followed by lymphoscintigraphy to identify the number and location of the primary tumor draining lymph node(s), the so-called SN(s). Over the last decade research has focused on the introduction of new imaging agents that can further aid (surgical) SN identification. Different tracers for SN mapping, with varying sizes and isotopes have been reported, most of which have proven their value in a clinical setting. A major challenge lies in transferring this diagnostic information obtained at the nuclear medicine department to the operating theatre thereby providing the surgeon with (image) guidance. Conventionally, an intraoperative injection of vital blue dye or a fluorescence dye is given to allow intraoperative optical SN identification. However, for some indications, the radiotracer-based approach remains crucial. More recently, hybrid tracers, that contain both a radioactive and fluorescent label, were introduced to allow for direct integration of pre- and intraoperative guidance technologies. Their potential is especially high when they are used in combination with new surgical imaging modalities and navigation tools. Next to a description of the known tracers for SN mapping, this review discusses the application of hybrid tracers during SN biopsy and how the introduction of these new techniques can further aid in translation of nuclear medicine information into the operating theatre.

  3. Simplified Dynamic Analysis of Grinders Spindle Node

    NASA Astrophysics Data System (ADS)

    Demec, Peter

    2014-12-01

    The contribution deals with the simplified dynamic analysis of surface grinding machine spindle node. Dynamic analysis is based on the use of the transfer matrix method, which is essentially a matrix form of method of initial parameters. The advantage of the described method, despite the seemingly complex mathematical apparatus, is primarily, that it does not require for solve the problem of costly commercial software using finite element method. All calculations can be made for example in MS Excel, which is advantageous especially in the initial stages of constructing of spindle node for the rapid assessment of the suitability its design. After detailing the entire structure of spindle node is then also necessary to perform the refined dynamic analysis in the environment of FEM, which it requires the necessary skills and experience and it is therefore economically difficult. This work was developed within grant project KEGA No. 023TUKE-4/2012 Creation of a comprehensive educational - teaching material for the article Production technique using a combination of traditional and modern information technology and e-learning.

  4. Spaceport aurora: An orbiting transportation node

    NASA Technical Reports Server (NTRS)

    1990-01-01

    With recent announcements of the development of permanently staffed facilities on the Moon and Mars, the national space plan is in need of an infrastructure system for transportation and maintenance. A project team at the University of Houston College of Architecture and the Sasakawa International Center for Space Architecture, recently examined components for a low Earth orbit (LEO) transportation node that supports a lunar build-up scenario. Areas of investigation included identifying transportation node functions, identifying existing space systems and subsystems, analyzing variable orbits, determining logistics strategies for maintenance, and investigating assured crew return systems. The information resulted in a requirements definition document, from which the team then addressed conceptual designs for a LEO transportation node. The primary design drivers included: orbital stability, maximizing human performance and safety, vehicle maintainability, and modularity within existing space infrastructure. For orbital stability, the power tower configuration provides a gravity gradient stabilized facility and serves as the backbone for the various facility components. To maximize human performance, human comfort is stressed through zoning of living and working activities, maintaining a consistent local vertical orientation, providing crew interaction and viewing areas and providing crew return vehicles. Vehicle maintainability is accomplished through dual hangars, dual work cupolas, work modules, telerobotics and a fuel depot. Modularity is incorporated using Space Station Freedom module diameter, Space Station Freedom standard racks, and interchangeable interior partitions. It is intended that the final design be flexible and adaptable to provide a facility prototype that can service multiple mission profiles using modular space systems.

  5. The Charles Perkins Centre's Twins Research Node.

    PubMed

    Ferreira, Lucas C; Craig, Jeffrey M; Hopper, John L; Carrick, Susan E

    2016-08-01

    Twins can help researchers disentangle the roles of genes from those of the environment on human traits, health, and diseases. To realize this potential, the Australian Twin Registry (ATR), University of Melbourne, and the Charles Perkins Centre (CPC), University of Sydney, established a collaboration to form the Twins Research Node, a highly interconnected research facility dedicated specifically to research involving twins. This collaboration aims to foster the adoption of twin designs as important tools for research in a range of health-related domains. The CPC hosted their Twins Research Node's launch seminar entitled 'Double the power of your research with twin studies', in which experienced twin researchers described how twin studies are supporting scientific discoveries and careers. The launch also featured twin pairs who have actively participated in research through the ATR. Researchers at the CPC were surveyed before the event to gauge their level of understanding and interest in utilizing twin research. This article describes the new Twins Research Node, discusses the survey's main results and reports on the launch seminar.

  6. Accelerating the Mining of Influential Nodes in Complex Networks through Community Detection

    SciTech Connect

    Halappanavar, Mahantesh; Sathanur, Arun V.; Nandi, Apurba

    2016-05-31

    Computing the set of influential nodes with a given size to ensure maximal spread of influence on a complex network is a challenging problem impacting multiple applications. A rigorous approach to influence maximization involves utilization of optimization routines that comes with a high computational cost. In this work, we propose to exploit the existence of communities in complex networks to accelerate the mining of influential seeds. We provide intuitive reasoning to explain why our approach should be able to provide speedups without significantly degrading the extent of the spread of influence when compared to the case of influence maximization without using the community information. Additionally, we have parallelized the complete workflow by leveraging an existing parallel implementation of the Louvain community detection algorithm. We then conduct a series of experiments on a dataset with three representative graphs to first verify our implementation and then demonstrate the speedups. Our method achieves speedups ranging from 3x - 28x for graphs with small number of communities while nearly matching or even exceeding the activation performance on the entire graph. Complexity analysis reveals that dramatic speedups are possible for larger graphs that contain a correspondingly larger number of communities. In addition to the speedups obtained from the utilization of the community structure, scalability results show up to 6.3x speedup on 20 cores relative to the baseline run on 2 cores. Finally, current limitations of the approach are outlined along with the planned next steps.

  7. Phase and magnetic properties evolutions of Y3-x(CaZr)xFe5-xO12 by the sol-gel method

    NASA Astrophysics Data System (ADS)

    Wang, Lili; Huang, Zhigao; Zhang, Huiqin; Yu, Ruibing

    2015-12-01

    In this work, Y3-x(CaZr)xFe5-xO12 (CaZr)x:YIG) were prepared by the sol-gel method. High substituted (CaZr)x:YIG nanoparticles with x up to 0.7 were obtained at 1080 °C, below the melting point of Cu electrode. The average sizes calculated by Scherrer formula decreased from 92.4 nm to 70.0 nm when the substitution amount increased from 0 to 0.7, which was consistent with the results of TEM. The sintering temperature required to form pure garnet phase increased from 690 °C to 1065 °C as the substitution amount x increased from 0 to 0.7 for probable homogeneity destruction by Ca2+ and Zr4+. The maximum saturation magnetization (Ms) of 29.8 emu/g was achieved at x=0.3. The enhancement of Ms was attributed to the quantity reduction of Fe3+ in a-site and the increase of net magnetic moment. The observed decline in Ms for the samples with x>0.3 might be attributed to the weakness of super-exchange interaction by changing the angle and length of Fe-O-Fe bonds too much. The complex variations of the coecivities (Hc) indicated the crystal structure from single domain to multiple domains as the sintering temperature increased. Comparing the properties of the samples with x=0 and 0.3, it seemed that the substitution had the influence not only on the formation temperature, but also on the critical size of single domain and the temperature of the critical size emerging.

  8. Analysis of wafer heating in 14nm DUV layers

    NASA Astrophysics Data System (ADS)

    Subramany, Lokesh; Chung, Woong Jae; Samudrala, Pavan; Gao, Haiyong; Aung, Nyan; Gomez, Juan Manuel; Minghetti, Blandine; Lee, Shawn

    2016-03-01

    To further shrink the contact and trench dimensions, Negative Tone Development (NTD) has become the de facto process at these layers. The NTD process uses a positive tone resist and an organic solvent-based negative tone developer which leads to improved image contrast, larger process window and smaller Mask Error Enhancement Factor (MEEF)[1]. The NTD masks have high transmission values leading to lens heating and as observed here wafer heating as well. Both lens and wafer heating will contribute to overlay error, however the effects of lens heating can be mitigated by applying lens heating corrections while no such corrections exist for wafer heating yet. Although the magnitude of overlay error due to wafer heating is low relative to lens heating; ever tightening overlay requirements imply that the distortions due to wafer heating will quickly become a significant part of the overlay budget. In this work the effects, analysis and observations of wafer heating on contact and metal layers of the 14nm node are presented. On product wafers it manifests as a difference in the scan up and scan down signatures between layers. An experiment to further understand wafer heating is performed with a test reticle that is used to monitor scanner performance.

  9. Patterning challenges in the sub-10 nm era

    NASA Astrophysics Data System (ADS)

    Preil, Moshe E.

    2016-03-01

    Historically, progress in lithography has been driven by steady advances in exposure tool and optical technology; shorter wavelength, higher numerical aperture (NA) and resolution enhancement techniques to drive the k1 factor as close as possible to the physical limit. Over the past decade, however, the pace of progress has been gated more by patterning - what we do after the resist image is printed - than by higher resolution imaging. The emphasis on patterning rather than just printing has created new pressures in many parts of the overall process, beginning with the design itself. The breakdown of lithographic error budgets into CD and OL tolerances has given way to total edge placement error (EPE) budgets where CD, OL and edge roughness, as well as film and etch variations, must all be controlled to meet the required tolerances. Contact hole and cut mask placement have likewise been tightened to single digit EPE budgets. Collaborative research between technology specialists in multiple areas, such as metrology, etch, process control and simulation, will all be required to deliver these patterning solutions for some years to come. This paper will describe some of these challenges in more detail, and suggest directions for future research to keep optical lithography relevant even below the 10 nm node.

  10. Analysis of complex network performance and heuristic node removal strategies

    NASA Astrophysics Data System (ADS)

    Jahanpour, Ehsan; Chen, Xin

    2013-12-01

    Removing important nodes from complex networks is a great challenge in fighting against criminal organizations and preventing disease outbreaks. Six network performance metrics, including four new metrics, are applied to quantify networks' diffusion speed, diffusion scale, homogeneity, and diameter. In order to efficiently identify nodes whose removal maximally destroys a network, i.e., minimizes network performance, ten structured heuristic node removal strategies are designed using different node centrality metrics including degree, betweenness, reciprocal closeness, complement-derived closeness, and eigenvector centrality. These strategies are applied to remove nodes from the September 11, 2001 hijackers' network, and their performance are compared to that of a random strategy, which removes randomly selected nodes, and the locally optimal solution (LOS), which removes nodes to minimize network performance at each step. The computational complexity of the 11 strategies and LOS is also analyzed. Results show that the node removal strategies using degree and betweenness centralities are more efficient than other strategies.

  11. History of sentinel node and validation of the technique

    PubMed Central

    Tanis, Pieter J; Nieweg, Omgo E; Valdés Olmos, Renato A; Th Rutgers, Emiel J; Kroon, Bin BR

    2001-01-01

    Sentinel node biopsy is a minimally invasive technique to select patients with occult lymph node metastases who may benefit from further regional or systemic therapy. The sentinel node is the first lymph node reached by metastasising cells from a primary tumour. Attempts to remove this node with a procedure based on standard anatomical patterns did not become popular. The development of the dynamic technique of intraoperative lymphatic mapping in the 1990s resulted in general acceptance of the sentinel node concept. This hypothesis of sequential tumour dissemination seems to be valid according to numerous studies of sentinel node biopsy with confirmatory regional lymph node dissection. This report describes the history and the validation of the technique, with particular reference to breast cancer. PMID:11250756

  12. A complex perovskite-type oxynitride: the first photocatalyst for water splitting operable at up to 600 nm.

    PubMed

    Pan, Chengsi; Takata, Tsuyoshi; Nakabayashi, Mamiko; Matsumoto, Takao; Shibata, Naoya; Ikuhara, Yuichi; Domen, Kazunari

    2015-03-02

    One of the simplest methods for splitting water into H2 and O2 with solar energy entails the use of a particulate-type semiconductor photocatalyst. To harness solar energy efficiently, a new water-splitting photocatalyst that is active over a wider range of the visible spectrum has been developed. In particular, a complex perovskite-type oxynitride, LaMg(x)Ta(1-x)O(1+3x)N(2-3x)(x≥1/3), can be employed for overall water splitting at wavelengths of up to 600 nm. Two effective strategies for overall water splitting were developed. The first entails the compositional fine-tuning of a photocatalyst to adjust the bandgap energy and position by forming a series of LaMg(x)Ta(1-x)O(1+3x)N(2-3x) solid solutions. The second method is based on the surface coating of the photocatalyst with a layer of amorphous oxyhydroxide to control the surface redox reactions. By combining these two strategies, the degradation of the photocatalyst and the reverse reaction could be prevented, resulting in successful overall water splitting.

  13. Extreme ultraviolet patterned mask inspection performance of advanced projection electron microscope system for 11nm half-pitch generation

    NASA Astrophysics Data System (ADS)

    Hirano, Ryoichi; Iida, Susumu; Amano, Tsuyoshi; Watanabe, Hidehiro; Hatakeyama, Masahiro; Murakami, Takeshi; Suematsu, Kenichi; Terao, Kenji

    2016-03-01

    Novel projection electron microscope optics have been developed and integrated into a new inspection system named EBEYE-V30 ("Model EBEYE" is an EBARA's model code) , and the resulting system shows promise for application to half-pitch (hp) 16-nm node extreme ultraviolet lithography (EUVL) patterned mask inspection. To improve the system's inspection throughput for 11-nm hp generation defect detection, a new electron-sensitive area image sensor with a high-speed data processing unit, a bright and stable electron source, and an image capture area deflector that operates simultaneously with the mask scanning motion have been developed. A learning system has been used for the mask inspection tool to meet the requirements of hp 11-nm node EUV patterned mask inspection. Defects are identified by the projection electron microscope system using the "defectivity" from the characteristics of the acquired image. The learning system has been developed to reduce the labor and costs associated with adjustment of the detection capability to cope with newly-defined mask defects. We describe the integration of the developed elements into the inspection tool and the verification of the designed specification. We have also verified the effectiveness of the learning system, which shows enhanced detection capability for the hp 11-nm node.

  14. Diode laser (980nm) cartilage reshaping

    NASA Astrophysics Data System (ADS)

    El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

    2011-03-01

    Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

  15. Brightly Luminescent and Color-Tunable Colloidal CH3NH3PbX3 (X = Br, I, Cl) Quantum Dots: Potential Alternatives for Display Technology.

    PubMed

    Zhang, Feng; Zhong, Haizheng; Chen, Cheng; Wu, Xian-gang; Hu, Xiangmin; Huang, Hailong; Han, Junbo; Zou, Bingsuo; Dong, Yuping

    2015-04-28

    Organometal halide perovskites are inexpensive materials with desirable characteristics of color-tunable and narrow-band emissions for lighting and display technology, but they suffer from low photoluminescence quantum yields at low excitation fluencies. Here we developed a ligand-assisted reprecipitation strategy to fabricate brightly luminescent and color-tunable colloidal CH3NH3PbX3 (X = Br, I, Cl) quantum dots with absolute quantum yield up to 70% at room temperature and low excitation fluencies. To illustrate the photoluminescence enhancements in these quantum dots, we conducted comprehensive composition and surface characterizations and determined the time- and temperature-dependent photoluminescence spectra. Comparisons between small-sized CH3NH3PbBr3 quantum dots (average diameter 3.3 nm) and corresponding micrometer-sized bulk particles (2-8 μm) suggest that the intense increased photoluminescence quantum yield originates from the increase of exciton binding energy due to size reduction as well as proper chemical passivations of the Br-rich surface. We further demonstrated wide-color gamut white-light-emitting diodes using green emissive CH3NH3PbBr3 quantum dots and red emissive K2SiF6:Mn(4+) as color converters, providing enhanced color quality for display technology. Moreover, colloidal CH3NH3PbX3 quantum dots are expected to exhibit interesting nanoscale excitonic properties and also have other potential applications in lasers, electroluminescence devices, and optical sensors.

  16. Structural and magnetic characterization of Zr-substituted magnetite (ZrxFe3-xO4, 0≤x≤1)

    NASA Astrophysics Data System (ADS)

    Gangwar, A.; Alla, S. K.; Srivastava, M.; Meena, S. S.; Prasadrao, E. V.; Mandal, R. K.; Yusuf, S. M.; Prasad, N. K.

    2016-03-01

    We report the preparation of monophasic Zr-substituted magnetite (ZrxFe3-xO4; 0≤x≤1) nanoparticles by wet chemical route. Such a report is lacking in the literature. Rietveld refinement of the X-ray diffraction (XRD) data suggests continuous decrease in the lattice parameter with increased Zr-substitutions. From TEM analysis, the size of the as synthesized particles was found to be in the range of 5-20 nm. The differential scanning calorimetry (DSC) curves for the samples with different amount of substitutions displayed considerable differences in their behaviors. The room temperature specific magnetization at 2 T has been found to decrease from 50 (x=0.2) to 41 A m2/kg (x=1.0) with increased Zr-substitution. From XRD and magnetic behavior analysis we could suggest that due to occupation of Zr4+ ions at tetrahedral and octahedral voids of Fe3O4, the amount of Fe2+ was more at octahedral site for x≤ 0.4 and at tetrahedral site for x>0.4 respectively. The ferrofluids prepared from these magnetic nanoparticles possessed good heating ability and Specific Absorption Rate (SAR) values suitable for bioapplications.

  17. The Influence of Sintering Temperature on the Microstructure and Thermoelectric Properties of n-Type Bi2Te3- x Se x Nanomaterials

    NASA Astrophysics Data System (ADS)

    Du, Y.; Cai, K. F.; Li, H.; An, B. J.

    2011-05-01

    Pure Bi2Te3 and Bi2Se3 nanopowders were hydrothermally synthesized, and n-type Bi2Te3- x Se x bulk samples were prepared by hot pressing a mixture of Bi2Te3 and Bi2Se3 nanopowders at 623 K, 648 K or 673 K and 80 MPa in vacuum. The phase composition of the powders and bulk samples were characterized by x-ray diffraction. The morphology of the powders was examined by transmission electron microscopy. The microstructure and composition of the bulk samples were characterized by field-emission scanning electron microscopy and energy-dispersive x-ray spectroscopy, respectively. The density of the samples increased with sintering temperature. The samples were somewhat oxidized, and the amount of oxide (Bi2TeO5) present increased with sintering temperature. The samples consisted of sheet-like grains with a thickness less than 100 nm. Seebeck coefficient, electrical conductivity, and thermal conductivity of the samples were measured from room temperature up to 573 K. Throughout the temperature range investigated, the sample sintered at 623 K had a higher power factor than the samples sintered at 648 K or 673 K.

  18. Phase composition and the structure of (1- x)KNO3 + xAl2O3 nanocomposites by X-ray diffraction

    NASA Astrophysics Data System (ADS)

    Ataev, M. B.; Gafurov, M. M.; Emirov, R. M.; Rabadanov, K. Sh.; Amirov, A. M.

    2016-12-01

    The phase composition and the structural properties of potassium nitrate KNO3 and its heterogeneous composites with nanometer-sized powder of aluminum oxide Al2O3 have been studied by X-ray diffraction at various concentrations of an Al2O3 nanopowder. It is found that, in the (1- x)KNO3 + xAl2O3 nanocomposites, additional high-temperature rhombohedral phase of potassium nitrate (phase III) with lattice parameters a = 5.4644 Å and c = 9.0842 Å. With increasing concentration of Al2O3 nanopowder, the content of the main potassium nitrate phase (phase II) is found to significantly decrease, and the relative fraction of the phase III in the total content of the nitrate in the composite composition increases. This phase is assumed to be "frozen" in the nanocomposite at the KNO3-Al2O3 interface. The estimated size of KNO3 crystallites in the phase III is more than 20 nm.

  19. Ultrastructural findings in lymph nodes from pigs suffering from naturally occurring postweaning multisystemic wasting syndrome.

    PubMed

    Rodriguez-Cariño, C; Segalés, J

    2009-07-01

    The aims of this study were to evaluate ultrastructural lesions in lymph nodes from postweaning multisystemic wasting syndrome (PMWS)-affected pigs and to correlate these alterations with detection of viral-like particles (VLPs). Samples of lymph nodes were taken from 4 PMWS-affected pigs and 2 healthy animals and processed by transmission electron microscopy. Significant ultrastructural alterations were only noted in PMWS-affected pigs, mainly in histiocytes and rarely in other cell types. Histiocytes showed severe swelling and proliferation of mitochondria, and proliferation and dilation of rough endoplasmic reticulum and Golgi complex. Infected histiocytes contained large numbers of intracytoplasmic inclusion (ICI) bodies with VLPs; some histiocytes also had intranuclear inclusions (INIs). Small inclusions were surrounded by double membrane, with a granular appearance or containing paracrystalline arrays; icosahedral VLPs were 8-17 nm in diameter. Large ICIs were double-membrane bounded or not and contained VLPs usually forming paracrystalline arrays. ICIs were often found next to mitochondria with severe swelling, and also inside them. INIs were not surrounded by membranes and contained virions of 10-13 nm diameter. Lymphocyte depletion was a striking finding of lymph nodes from PMWS-affected pigs. The inclusion bodies containing VLPs referred to in the present study should be classified as viral factories, suggesting that viral replication is probably a frequent event in macrophages, in which mitochondria might play a role.

  20. Novel Methods of Lymph Node Evaluation for Predicting the Prognosis of Colorectal Cancer Patients with Inadequate Lymph Node Harvest

    PubMed Central

    Kwon, Taek Soo; Choi, Sung Bong; Lee, Yoon Suk; Kim, Jun-Gi; Oh, Seong Taek; Lee, In Kyu

    2016-01-01

    Purpose Lymph node metastasis is an important factor for predicting the prognosis of colorectal cancer patients. However, approximately 60% of patients do not receive adequate lymph node evaluation (less than 12 lymph nodes). In this study, we identified a more effective tool for predicting the prognosis of patients who received inadequate lymph node evaluation. Materials and Methods The number of metastatic lymph nodes, total number of lymph nodes examined, number of negative metastatic lymph nodes (NL), lymph node ratio (LR), and the number of apical lymph nodes (APL) were examined, and the prognostic impact of these parameters was examined in patients with colorectal cancer who underwent surgery from January 2004 to December 2011. In total, 806 people were analyzed retrospectively. Results In comparison of different lymph node analysis methods for rectal cancer patients who did not receive adequate lymph node dissection, the LR showed a significant difference in overall survival (OS) and the APL predicted a significant difference in disease-free survival (DFS). In the case of colon cancer patients who did not receive adequate lymph node dissection, LR predicted a significant difference in DFS and OS, and the APL predicted a significant difference in DFS. Conclusion If patients did not receive adequate lymph node evaluation, the LR and NL were useful parameters to complement N stage for predicting OS in colon cancer, whereas LR was complementary for rectal cancer. The APL could be used for prediction of DFS in all patients. PMID:25943323

  1. 14nm M1 triple patterning

    NASA Astrophysics Data System (ADS)

    Li, Qiao; Ghosh, Pradiptya; Abercrombie, David; LaCour, Pat; Kanodia, Suniti

    2012-03-01

    With 20nm production becoming a reality, research has started to focus on the technology needs for 14nm. The LELE double patterning used in 20nm production will not be able to resolve M1 for 14nm. Main competing enabling technologies for the 14nm M1 are SADP, EUV, and LELELE (referred as LE3 thereafter) triple patterning. SADP has a number of concerns of 1. density, as a layout geometry needs to stay complete as a whole, and can not be broken; 2. the complexity in SADP mask generation and debug feedback to designers; 3. the subtraction nature of the trim mask further complicates OPC and yield. While EUV does not share those concerns, it faces significant challenges on the manufacturing equipment side. Of the SADP concerns, LE3 only shares that of complexity involved in mask generation and intuitive debug feedback mechanism. It does not require a layout geometry to stay as a whole, and it benefits from the affinity to LELE which is being deployed for 20nm production. From a process point of view, this benefit from affinity to LELE is tremendous due to the data and knowledge that have been collected and will be coming from the LELE deployment. In this paper, we first recount the computational complexity of the 3-colorability problem which is an integral part of a LE3 solution. We then describe graph characteristics that can be exploited such that 3-colorability is equivalent under divide-and-conquer. Also outlined are heuristics, which are generally applied in solving computationally intractable problems, for the 3-colorability problem, and the importance in choosing appropriate worst-case exponential runtime algorithms. This paper concludes with a discussion on the new hierarchical problem that faces 3-colorability but not 2-colorability and proposals for non-3-colorability feedback mechanism.

  2. Sentinel Lymph Nodes for Breast Carcinoma A Paradigm Shift

    PubMed Central

    Maguire, Aoife; Brogi, Edi

    2016-01-01

    Context Sentinel lymph node biopsy has been established as the new standard of care for axillary staging in most patients with invasive breast carcinoma. Historically, all patients with a positive sentinel lymph node biopsy result underwent axillary lymph node dissection. Recent trials show that axillary lymph node dissection can be safely omitted in women with clinically node negative, T1 or T2 invasive breast cancer treated with breast-conserving surgery and whole-breast radiotherapy. This change in practice also has implications on the pathologic examination and reporting of sentinel lymph nodes. Objective To review recent clinical and pathologic studies of sentinel lymph nodes and explore how these findings influence the pathologic evaluation of sentinel lymph nodes. Data Sources Sources were published articles from peer-reviewed journals in PubMed (US National Library of Medicine) and published guidelines from the American Joint Committee on Cancer, the Union for International Cancer Control, the American Society of Clinical Oncology, and the National Comprehensive Cancer Network. Conclusions The main goal of sentinel lymph node examination should be to detect all macrometastases (>2 mm). Grossly sectioning sentinel lymph nodes at 2-mm intervals and evaluation of one hematoxylin-eosin–stained section from each block is the preferred method of pathologic evaluation. Axillary lymph node dissection can be safely omitted in clinically node-negative patients with negative sentinel lymph nodes, as well as in a selected group of patients with limited sentinel lymph node involvement. The pathologic features of the primary carcinoma and its sentinel lymph node metastases contribute to estimate the extent of non–sentinel lymph node involvement. This information is important to decide on further axillary treatment. PMID:27472237

  3. On Heterogeneous Mobile Network Connectivity: Number of Gateway Nodes

    DTIC Science & Technology

    2011-04-28

    clusters . Once the network has partitioned, mobile nodes cannot in different clusters cannot maintain connectivity due to insufficient radio...mobile nodes in different clusters can only occur when each cluster contains a gateway node. In this paper, we investigated the number of gateway...disperse geographical area. As tactical nodes move durng an operatioit. the network may partition into several segregated clusters . Once the network

  4. Comparative study of Nd:KGW lasers pumped at 808 nm and 877 nm

    NASA Astrophysics Data System (ADS)

    Huang, Ke; Ge, Wen-Qi; Zhao, Tian-Zhuo; He, Jian-Guo; Feng, Chen-Yong; Fan, Zhong-Wei

    2015-10-01

    The laser performance and thermal analysis of Nd:KGW laser continuously pumped by 808 nm and 877 nm are comparatively investigated. Output power of 670 mW and 1587 mW, with nearly TEM00 mode, are achieved respectively at 808 nm pump and 877 nm pump. Meanwhile, a high-power passively Q-switched Nd:KGW/Cr4+:YAG laser pumped at 877 nm is demonstrated. An average output power of 1495 mW is obtained at pump power of 5.22 W while the laser is operating at repetition of 53.17 kHz. We demonstrate that 877 nm diode laser is a more potential pump source for Nd:KGW lasers.

  5. Salmonella in lymph nodes of cattle presented for harvest

    Technology Transfer Automated Retrieval System (TEKTRAN)

    This study was undertaken to determine the prevalence of Salmonella in the subiliac lymph nodes (LN) of cattle. Lymph node samples were obtained from carcasses of cull and feedlot cattle at commercial packing plants. Lymph nodes were trimmed of all fat, surface sterilized by submersion in boiling ...

  6. Identifying node role in social network based on multiple indicators.

    PubMed

    Huang, Shaobin; Lv, Tianyang; Zhang, Xizhe; Yang, Yange; Zheng, Weimin; Wen, Chao

    2014-01-01

    It is a classic topic of social network analysis to evaluate the importance of nodes and identify the node that takes on the role of core or bridge in a network. Because a single indicator is not sufficient to analyze multiple characteristics of a node, it is a natural solution to apply multiple indicators that should be selected carefully. An intuitive idea is to select some indicators with weak correlations to efficiently assess different characteristics of a node. However, this paper shows that it is much better to select the indicators with strong correlations. Because indicator correlation is based on the statistical analysis of a large number of nodes, the particularity of an important node will be outlined if its indicator relationship doesn't comply with the statistical correlation. Therefore, the paper selects the multiple indicators including degree, ego-betweenness centrality and eigenvector centrality to evaluate the importance and the role of a node. The importance of a node is equal to the normalized sum of its three indicators. A candidate for core or bridge is selected from the great degree nodes or the nodes with great ego-betweenness centrality respectively. Then, the role of a candidate is determined according to the difference between its indicators' relationship with the statistical correlation of the overall network. Based on 18 real networks and 3 kinds of model networks, the experimental results show that the proposed methods perform quite well in evaluating the importance of nodes and in identifying the node role.

  7. Salmonella prevalence in bovine lymph nodes differs among feedyards

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Lymphatic tissue, specifically lymph nodes, is commonly incorporated into ground beef products as a component of lean trimmings. Salmonella and other pathogenic bacteria have been identified in bovine lymph nodes. Although Salmonella prevalence has been examined among lymph nodes within an animal,...

  8. Synthesis of fluorinated materials for 193-nm immersion lithography and 157-nm lithography

    NASA Astrophysics Data System (ADS)

    Yamashita, T.; Ishikawa, T.; Yoshida, T.; Hayamai, T.; Araki, Takayuki; Aoyama, H.; Hagiwara, T.; Itani, Toshiro; Fujii, Kiyoshi

    2005-05-01

    Various fluorinated polymers were synthesized for application in 193-nm immersion lithography with the goal of improving 157-nm photoresist performance. Their fundamental properties were characterized, such as transparency at 193-nm and 157-nm (wavelength) and solubility in water and a standard alkaline developer. High transparency, i.e., absorbance better than 0.3 μm-1 at 193-nm wavelength, was achieved. The dissolution behaviors of them were studied by using the Quartz Crystal Microbalance (QCM) method. We find that the dissolution rate of Poly(norbornene-2-fluoro-2-hexafluoroalchol) (PNB1FVIP) in 0.065N tetramethylammonium hydroxide (TMAH) was >200 times (nm/s) faster than that of the copolymer of tetrafluoroethylene (TFE) and norbornene-2-fluoro-2-hexafluoroalchol (TFE/NB1FVIP). A resist based on TFE/NB1FVIP was able to delineate 75 nm dense lines by exposure at 193-nm (wavelength) with an alternating phase shift mask using a 0.75 NA ArF scanner. The dissolution rates of the fluoropolymers in water and a 0.262N and 0.065 TMAH can be controlled by optimizing counter monomers containing hexafluoroisopropanol (HFA) unit, carboxylic acid unit and so on. In addition, we have collect water contact angle data. This data shows that fluoropolymers can be used as resist cover materials for 193-nm immersion lithography.

  9. White Sands, Carrizozo Lava Beds, NM

    NASA Technical Reports Server (NTRS)

    1973-01-01

    A truly remarkable view of White Sands and the nearby Carrizozo Lava Beds in southeast NM (33.5N, 106.5W). White Sands, site of the WW II atomic bomb development and testing facility and later post war nuclear weapons testing that can still be seen in the cleared circular patterns on the ground.

  10. Radiation Tolerance of 65nm CMOS Transistors

    DOE PAGES

    Krohn, M.; Bentele, B.; Christian, D. C.; ...

    2015-12-11

    We report on the effects of ionizing radiation on 65 nm CMOS transistors held at approximately -20°C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.

  11. The 503nm pigment of Escherichia coli

    PubMed Central

    Kamitakahara, Joyce R.; Polglase, W. J.

    1970-01-01

    The yield of cell protein was one-third less for streptomycin-dependent Escherichia coli B than for the wild-type parent strain when both were grown aerobically on a medium with limiting glucose, but anaerobically the yield of protein was similar for both strains. The transient pigment absorbing at 503nm that is known to be present in E. coli and other organisms was not detectable in streptomycin-dependent mutants nor in a non-dependent (energy-deficient) revertant. When wild-type E. coli B was grown on limiting glucose–salts medium containing 2,4 dinitrophenol, the yield of cell protein was decreased and formation of the 503nm pigment was inhibited. Fumarase, aconitase and glucose 6-phosphate dehydrogenase were de-repressed in E. coli B cells grown with excess of glucose in a medium containing 2,4-dinitrophenol. In air-oxidized, wild-type E. coli B cells, the 503nm pigment appeared before reduced cytochromes when gluconate was the substrate but failed to appear when succinate was the substrate. The results provide evidence for a role of the 503nm pigment in aerobic energy metabolism, possibly as an electron acceptor from NADPH. PMID:4395501

  12. YBa sub 2 Cu sub (3-x) Co sub x O sub y : A substrate material for YBCO superconductors

    SciTech Connect

    Vienna, J.D.; Balachandran, U.; Poeppel, R.B. ); Cermignani, W.; Taylor, J.A. . Coll. of Ceramics)

    1992-04-01

    The physical properties of the ceramic YBa{sub 2}Cu{sub (3-x)}Co{sub x}O{sub y} have been investigated in order to evaluate its usefulness as a substrate material for YBCO superconductors. YBa{sub 2}Cu{sub (3-x)}Co{sub x}O{sub y} has been found to be thermally and chemically compatible with 123 and displays adequate electrical properties for a substrate material. A material with the nominal composition of YBa{sub 2}Cu{sub 2.2}Co{sub 0.8}O{sub 7} was investigated, extensively. The mechanical properties of this material were found to be poor, e.g., tensile strength was only 60 MPa. A semiconductor-like behavior was observed with a room-temperature resistivity of 70 m{Omega}.cm and a resistivity equal to 4 {times} 10{sup 6} m{Omega}.cm at 77 K.

  13. Giant Faraday rotation in Bi(x)Ce(3-x)Fe5O12 epitaxial garnet films.

    PubMed

    Chandra Sekhar, M; Singh, Mahi R; Basu, Shantanu; Pinnepalli, Sai

    2012-04-23

    Thin films of Bi(x)Ce(3-x)Fe(5)O(12) with x = 0.7 and 0.8 compositions were prepared by using pulsed laser deposition. We investigated the effects of processing parameters used to fabricate these films by measuring various physical properties such as X-ray diffraction, transmittance, magnetization and Faraday rotation. In this study, we propose a phase diagram which provides a suitable window for the deposition of Bi(x)Ce(3-x)Fe(5)O(12) epitaxial films. We have also observed a giant Faraday rotation of 1-1.10 degree/µm in our optimized films. The measured Faraday rotation value is 1.6 and 50 times larger than that of CeYIG and YIG respectively. A theoretical model has been proposed for Faraday rotation based on density matrix method and an excellent agreement between experiment and theory is found.

  14. Preliminary Report on Oak Ridge National Laboratory Testing of Drake/ACSS/MA2/E3X

    SciTech Connect

    Irminger, Philip; King, Daniel J.; Herron, Andrew N.; Davis, Cody; Temple, Bill; Baker, Gord; Li, Zhi; Starke, Michael R.; Ollis, T. Ben

    2016-01-01

    A key to industry acceptance of a new technology is extensive validation in field trials. The Powerline Conductor Accelerated Test facility (PCAT) at Oak Ridge National Laboratory (ORNL) is specifically designed to evaluate the performance and reliability of a new conductor technology under real world conditions. The facility is set up to capture large amounts of data during testing. General Cable used the ORNL PCAT facility to validate the performance of TransPowr with E3X Technology a standard overhead conductor with an inorganic high emissivity, low absorptivity surface coating. Extensive testing has demonstrated a significant improvement in conductor performance across a wide range of operating temperatures, indicating that E3X Technology can provide a reduction in temperature, a reduction in sag, and an increase in ampacity when applied to the surface of any overhead conductor. This report provides initial results of that testing.

  15. Morphological and magnetic study of CaMnO{sub 3-x} oxides obtained from different routes

    SciTech Connect

    Gil de Muro, Izaskun; Insausti, Maite; Lezama, Luis; Rojo, Teofilo . E-mail: qiproapt@lg.ehu.es

    2005-03-15

    The CaMnO{sub 3-x} (x=0 and 0.02) mixed oxide was synthesised from both thermal treatment of a metallo-organic precursor and ceramic method. The morphology of the different products is clearly different. The samples exhibit antiferromagnetic ordering with T{sub N} near to 120K and a weak ferromagnetic component above T{sub N}. This is slightly stronger in the phase prepared by the ceramic route.

  16. 3xTg-AD Mice Exhibit an Activated Central Stress Axis during Early-Stage Pathology

    PubMed Central

    Hebda-Bauer, Elaine K.; Simmons, Tracy A.; Sugg, Andrew; Ural, Eren; Stewart, James A.; Beals, James L.; Wei, Qiang; Watson, Stanley J.; Akil, Huda

    2012-01-01

    Activation of the hypothalamic-pituitary-adrenal (HPA) axis occurs in response to the organism’s innate need for homeostasis. The glucocorticoids (GCs) that are released into the circulation upon acute activation of the HPA axis perform stress-adaptive functions and provide negative feedback to turn off the HPA axis, but can be detrimental when in excess. Long-term activation of the HPA axis (such as with chronic stress) enhances susceptibility to neuronal dysfunction and death, and increases vulnerability to Alzheimer’s disease (AD). However, little is known how components of the HPA axis, upstream of GCs, impact vulnerability to AD. This study examined basal gene expression of stress-related molecules in brains of 3xTg-AD mice during early-stage pathology. Basal glucocorticoid levels and mRNA expression of the glucocorticoid receptor (GR), mineralocorticoid receptor (MR), and corticotropic releasing hormone (CRH) in several stress- and emotionality-related brain regions were measured in 3–4-month-old 3xTg-AD mice. Despite normal glucocorticoid levels, young 3xTg-AD mice exhibit an activated central HPA axis, with altered mRNA levels of MR and GR in the hippocampus, GR and CRH in the paraventricular nucleus of the hypothalamus, GR and CRH in the central nucleus of the amygdala, and CRH in the bed nucleus of the stria terminalis. This HPA axis activation is present during early-stage neuropathology when 3xTg-AD mice show mild behavioral changes, suggesting an ongoing neuroendocrine regulation that precedes the onset of severe AD-like pathology and behavioral deficits. PMID:22976078

  17. Multiband nodeless superconductivity near the charge-density-wave quantum critical point in ZrTe3-x Se x

    NASA Astrophysics Data System (ADS)

    Shan, Cui; Lan-Po, He; Xiao-Chen, Hong; Xiang-De, Zhu; Cedomir, Petrovic; Shi-Yan, Li

    2016-07-01

    It was found that selenium doping can suppress the charge-density-wave (CDW) order and induce bulk superconductivity in ZrTe3. The observed superconducting dome suggests the existence of a CDW quantum critical point (QCP) in ZrTe3-x Se x near x ≈ 0.04. To elucidate the superconducting state near the CDW QCP, we measure the thermal conductivity of two ZrTe3-x Se x single crystals (x = 0.044 and 0.051) down to 80 mK. For both samples, the residual linear term κ 0/T at zero field is negligible, which is a clear evidence for nodeless superconducting gap. Furthermore, the field dependence of κ 0/T manifests a multigap behavior. These results demonstrate multiple nodeless superconducting gaps in ZrTe3-x Se x , which indicates conventional superconductivity despite of the existence of a CDW QCP. Project supported by the National Basic Research Program of China (Grant Nos. 2012CB821402 and 2015CB921401), the National Natural Science Foundation of China (Grant Nos. 91421101, 11422429, and 11204312), the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning, China, and STCSM of China (Grant No. 15XD1500200). Work at Brookhaven National Laboratory was supported by the US DOE under Contract No. DESC00112704.

  18. Alzheimer therapy with an antibody against N-terminal Abeta 4-X and pyroglutamate Abeta 3-X

    PubMed Central

    Antonios, Gregory; Borgers, Henning; Richard, Bernhard C.; Brauß, Andreas; Meißner, Julius; Weggen, Sascha; Pena, Vladimir; Pillot, Thierry; Davies, Sarah L.; Bakrania, Preeti; Matthews, David; Brownlees, Janet; Bouter, Yvonne; Bayer, Thomas A.

    2015-01-01

    Full-length Aβ1-42 and Aβ1-40, N-truncated pyroglutamate Aβ3-42 and Aβ4-42 are major variants in the Alzheimer brain. Aβ4-42 has not been considered as a therapeutic target yet. We demonstrate that the antibody NT4X and its Fab fragment reacting with both the free N-terminus of Aβ4-x and pyroglutamate Aβ3-X mitigated neuron loss in Tg4-42 mice expressing Aβ4-42 and completely rescued spatial reference memory deficits after passive immunization. NT4X and its Fab fragment also rescued working memory deficits in wild type mice induced by intraventricular injection of Aβ4-42. NT4X reduced pyroglutamate Aβ3-x, Aβx-40 and Thioflavin-S positive plaque load after passive immunization of 5XFAD mice. Aβ1-x and Aβx-42 plaque deposits were unchanged. Importantly, for the first time, we demonstrate that passive immunization using the antibody NT4X is therapeutically beneficial in Alzheimer mouse models showing that N-truncated Aβ starting with position four in addition to pyroglutamate Aβ3-x is a relevant target to fight Alzheimer’s disease. PMID:26626428

  19. Optimal Shape Design of Mail-Slot Nacelle on N3-X Hybrid Wing-Body Configuration

    NASA Technical Reports Server (NTRS)

    Kim, Hyoungjin; Liou, Meng-Sing

    2013-01-01

    System studies show that a N3-X hybrid wing-body aircraft with a turboelectric distributed propulsion system using a mail-slot inlet/nozzle nacelle can meet the environmental and performance goals for N+3 generation transports (three generations beyond the current air transport technology level) set by NASA's Subsonic Fixed Wing Project. In this study, a Navier-Stokes flow simulation of N3-X on hybrid unstructured meshes was conducted, including the mail-slot propulsor. The geometry of the mail-slot propulsor was generated by a CAD (Computer-Aided Design)-free shape parameterization. A novel body force model generation approach was suggested for a more realistic and efficient simulation of the flow turning, pressure rise and loss effects of the fan blades and the inlet-fan interactions. Flow simulation results of the N3-X demonstrates the validity of the present approach. An optimal Shape design of the mail-slot nacelle surface was conducted to reduce strength of shock waves and flow separations on the cowl surface.

  20. Fabrication of Bi2Te3-x Se x nanowires with tunable chemical compositions and enhanced thermoelectric properties.

    PubMed

    Liu, Shuai; Peng, Nan; Zhou, Chongjian; Bai, Yu; Tang, Shuang; Ma, Dayan; Ma, Fei; Xu, Kewei

    2017-02-24

    Uniform Bi2Te3-x Se x nanowires (NWs) with tunable components are synthesized by a modified solution method free of any template, and inter-diffusion mechanism is proposed for the growth and transformation of ternary nanowires. Spark plasma sintering is adopted to fabricate the pellets of Bi2Te3-x Se x NWs and thermoelectric transport properties are measured. As compared to Bi2Te3 pellets, Se doping results in lowered electrical conductivity because of the reduced carrier concentration, both the Seebeck coefficient and the power factor are enhanced substantially. The Bi2Te2.7Se0.3 pellet exhibits the highest power factor at room temperature as a result of optimized carrier concentration (4.37 × 10(19) cm(-3)) and mobility (60.22 cm(2) V(-1) s(-1)). As compared to Bi2Te3, the thermal conductivity of Bi2Te3-x Se x is lowered owing to the enhanced phonon scattering by dopants and grain boundaries. As a result, the ZT value at 300 K is substantially improved from 0.045 of Bi2Te3 to 0.42 of Bi2Te2.7Se0.3. It is suggested that Se doping is an effective way to enhance the thermoelectric performance of Bi2Te3 based materials.

  1. Fabrication of Bi2Te3-x Se x nanowires with tunable chemical compositions and enhanced thermoelectric properties

    NASA Astrophysics Data System (ADS)

    Liu, Shuai; Peng, Nan; Zhou, Chongjian; Bai, Yu; Tang, Shuang; Ma, Dayan; Ma, Fei; Xu, Kewei

    2017-02-01

    Uniform Bi2Te3-x Se x nanowires (NWs) with tunable components are synthesized by a modified solution method free of any template, and inter-diffusion mechanism is proposed for the growth and transformation of ternary nanowires. Spark plasma sintering is adopted to fabricate the pellets of Bi2Te3-x Se x NWs and thermoelectric transport properties are measured. As compared to Bi2Te3 pellets, Se doping results in lowered electrical conductivity because of the reduced carrier concentration, both the Seebeck coefficient and the power factor are enhanced substantially. The Bi2Te2.7Se0.3 pellet exhibits the highest power factor at room temperature as a result of optimized carrier concentration (4.37 × 1019 cm-3) and mobility (60.22 cm2 V-1 s-1). As compared to Bi2Te3, the thermal conductivity of Bi2Te3-x Se x is lowered owing to the enhanced phonon scattering by dopants and grain boundaries. As a result, the ZT value at 300 K is substantially improved from 0.045 of Bi2Te3 to 0.42 of Bi2Te2.7Se0.3. It is suggested that Se doping is an effective way to enhance the thermoelectric performance of Bi2Te3 based materials.

  2. Persistence of behaviours in the Forced Swim Test in 3xTg-AD mice at advanced stages of disease.

    PubMed

    Torres-Lista, Virginia; Giménez-Llort, Lydia

    2014-07-01

    Forced Swimming Test (FST) models behavioural despair in animals by loss of motivation to respond or the refusal to escape. The present study characterizes the behavioural responses of 12-month-old male 3xTg-AD mice in FST as compared to age-matched no-transgenic (NTg) mice. Paradoxical results were consistently found from what would be expected from their BPSD (Behavioural and Psychological Symptoms of Dementia)-like profile. The comprehensive analysis of the ethogram shown in the FST considered the intervals of the test (0-2 and 2-6min), all the elicited behavioural responses (immobility, swimming and climbing) and their features (total duration, frequency of episodes and mean duration). Both genotypes showed equal number of swimming episodes and climbing attempts during the first interval, that resulted in high swimming times, short climbing and scarce immobility. Thereafter, the NTg mice showed a behavioural shift over time and the immobility response showed up. In contrast, all the measures consistently evidenced that 3xTg-AD persisted with the previous behavioural pattern. Genotype differences consisted in less number of episodes of immobility and swimming, and a low immobility time in favour of swimming. No differences were found in 'climbing' attempts. The behavioural response observed is discussed as a lack of ability of 3xTg-AD mice to shift behaviour over time that may result of poorest cognitive flexibility and copying with stress strategies more than behavioural despair per se.

  3. Alzheimer therapy with an antibody against N-terminal Abeta 4-X and pyroglutamate Abeta 3-X.

    PubMed

    Antonios, Gregory; Borgers, Henning; Richard, Bernhard C; Brauß, Andreas; Meißner, Julius; Weggen, Sascha; Pena, Vladimir; Pillot, Thierry; Davies, Sarah L; Bakrania, Preeti; Matthews, David; Brownlees, Janet; Bouter, Yvonne; Bayer, Thomas A

    2015-12-02

    Full-length Aβ1-42 and Aβ1-40, N-truncated pyroglutamate Aβ3-42 and Aβ4-42 are major variants in the Alzheimer brain. Aβ4-42 has not been considered as a therapeutic target yet. We demonstrate that the antibody NT4X and its Fab fragment reacting with both the free N-terminus of Aβ4-x and pyroglutamate Aβ3-X mitigated neuron loss in Tg4-42 mice expressing Aβ4-42 and completely rescued spatial reference memory deficits after passive immunization. NT4X and its Fab fragment also rescued working memory deficits in wild type mice induced by intraventricular injection of Aβ4-42. NT4X reduced pyroglutamate Aβ3-x, Aβx-40 and Thioflavin-S positive plaque load after passive immunization of 5XFAD mice. Aβ1-x and Aβx-42 plaque deposits were unchanged. Importantly, for the first time, we demonstrate that passive immunization using the antibody NT4X is therapeutically beneficial in Alzheimer mouse models showing that N-truncated Aβ starting with position four in addition to pyroglutamate Aβ3-x is a relevant target to fight Alzheimer's disease.

  4. [Cytological examination of the intrathoracic lymph nodes (author's transl)].

    PubMed

    Simeĉek, C

    1978-01-01

    During the last few years, cytological examinations of the intrathoracic lymph nodes have become a usual method of bronchological examinations, being applied by way of routine. Taking the analysis of 3408 perbronchial and pertracheal lymph node punctions as a basis, the author discusses the results. Mostly the intrathoracic nodes of lung cancer patients were examined. A metastasization could be detected in 58 per cent. At sarcoidosis and tuberculosis the results correspond to those of mediastinoscopy. The occurrence of the cholesterol crystals is mentioned. Occasionally, megacaryocytes and immature cells of the hematopoiesis are found in the lymph nodes. Due to the favourable anatomic conditions, also normal lymph nodes are accessible to perbronchial punction.

  5. A new miniaturized fiber positioning node for LAMOST

    NASA Astrophysics Data System (ADS)

    Guo, Liang; Gu, Yonggang; Shen, Yuran; Zhai, Chao

    2016-07-01

    To distribute more fiber positioning nodes on the LAMOST focal plate, two steps are proposed to miniaturize the fiber positioning node in this paper. The first step is to miniaturize the mechanical device of the fiber positioning node. The second step is to redesign the entire wireless driving board using smaller and performance-higher devices. As a result, the size of the new miniaturized fiber positioning node has to be reduced by above 40% and the dense of fiber positioning nodes on focal plate increases by 20% at least.

  6. Genetic Network Programming with Intron-Like Nodes

    NASA Astrophysics Data System (ADS)

    Mabu, Shingo; Chen, Yan; Eto, Shinji; Shimada, Kaoru; Hirasawa, Kotaro

    Recently, Genetic Network Programming (GNP) has been proposed, which is an extension of Genetic Algorithm(GA) and Genetic Programming(GP). GNP can make compact programs and can memorize the past history in it implicitly, because it expresses the solution by directed graphs and therefore, it can reuse the nodes. In this research, intron-like nodes are introduced for improving the performance of GNP. The aim of introducing intron-like nodes is to use every node as much as possible. It is found from simulations that the intron-like nodes are useful for improving the training speed and generalization ability.

  7. Optical response of a line node semimetal

    NASA Astrophysics Data System (ADS)

    Carbotte, J. P.

    2017-02-01

    We calculate the AC optical response of a line node semimetal with emphasis on characteristic behaviours which can be used to distinguish them from point node materials such as Dirac and Weyl semimetals. The interband optical background at zero temperature displays a flat region at small photon energies ( Ω ) analogue to the universal background seen in graphene. However, in contrast to graphene, the height of the constant region is not universal but depends inversely on the Fermi velocity of the charge carriers and directly on the radius (b) in momentum space of the nodal circle. The parameter b is a defining energy scale and determines the range of photon energy over which the flat response persists. At high energies Ω >2b , the interband response becomes linear in Ω in agreement with the case for 3D-Dirac fermions with point node. The optical spectral weight contained in the interband or Drude conductivity shows the same two distinct regimes. At low temperature (T) (chemical potential (μ)), it rises linearly with T≤ft(μ \\right) and is proportional to b. At high temperature, T≤ft(μ \\right) , a {{T}2}≤ft({μ2}\\right) law is obtained, which is independent of b. At T  =  0, the Lorentz number takes on the conventional value {{L}o}={π2}/3{{e}2} for all values of μ. It increases with increasing temperature to reach a first plateau of 2.4L o provided T>μ but μ \\ll b . At high temperature, T  >  b, a second plateau of height 4.2L o emerges. The first plateau is characteristic of 2D-Dirac while the second corresponds to 3D-Dirac. The thermopower as a function of temperature also shows an evolution from a 2D to 3D behaviour.

  8. Optical response of a line node semimetal.

    PubMed

    Carbotte, J P

    2017-02-01

    We calculate the AC optical response of a line node semimetal with emphasis on characteristic behaviours which can be used to distinguish them from point node materials such as Dirac and Weyl semimetals. The interband optical background at zero temperature displays a flat region at small photon energies ([Formula: see text]) analogue to the universal background seen in graphene. However, in contrast to graphene, the height of the constant region is not universal but depends inversely on the Fermi velocity of the charge carriers and directly on the radius (b) in momentum space of the nodal circle. The parameter b is a defining energy scale and determines the range of photon energy over which the flat response persists. At high energies [Formula: see text], the interband response becomes linear in [Formula: see text] in agreement with the case for 3D-Dirac fermions with point node. The optical spectral weight contained in the interband or Drude conductivity shows the same two distinct regimes. At low temperature (T) (chemical potential (μ)), it rises linearly with [Formula: see text] and is proportional to b. At high temperature, [Formula: see text], a [Formula: see text] law is obtained, which is independent of b. At T  =  0, the Lorentz number takes on the conventional value [Formula: see text] for all values of μ. It increases with increasing temperature to reach a first plateau of 2.4L o provided [Formula: see text] but [Formula: see text]. At high temperature, T  >  b, a second plateau of height 4.2L o emerges. The first plateau is characteristic of 2D-Dirac while the second corresponds to 3D-Dirac. The thermopower as a function of temperature also shows an evolution from a 2D to 3D behaviour.

  9. Line of Dirac Nodes in Hyperhoneycomb Lattices.

    PubMed

    Mullen, Kieran; Uchoa, Bruno; Glatzhofer, Daniel T

    2015-07-10

    We propose a family of structures that have "Dirac loops," closed lines of Dirac nodes in momentum space, on which the density of states vanishes linearly with energy. Those lattices all possess the planar trigonal connectivity present in graphene, but are three dimensional. We show that their highly anisotropic and multiply connected Fermi surface leads to quantized Hall conductivities in three dimensions for magnetic fields with toroidal geometry. In the presence of spin-orbit coupling, we show that those structures have topological surface states. We discuss the feasibility of realizing the structures as new allotropes of carbon.

  10. Line of Dirac Nodes in Hyperhoneycomb Lattices

    NASA Astrophysics Data System (ADS)

    Mullen, Kieran; Uchoa, Bruno; Glatzhofer, Daniel T.

    2015-07-01

    We propose a family of structures that have "Dirac loops," closed lines of Dirac nodes in momentum space, on which the density of states vanishes linearly with energy. Those lattices all possess the planar trigonal connectivity present in graphene, but are three dimensional. We show that their highly anisotropic and multiply connected Fermi surface leads to quantized Hall conductivities in three dimensions for magnetic fields with toroidal geometry. In the presence of spin-orbit coupling, we show that those structures have topological surface states. We discuss the feasibility of realizing the structures as new allotropes of carbon.

  11. Reverse Geographic Location of a Computer Node

    DTIC Science & Technology

    2003-03-01

    2-9 2.3.4 Dijkstra’s Algorithm…………………………… 2-10 2.4 Location Tools.………………………………………….. 2-13 2.4.1 CAIDA Tools...way to its destination, such as the node names. 2.4.1 CAIDA Tools. “ CAIDA , the Cooperative Association for Internet Data Analysis, provides tools...and analyses promoting the engineering and maintenance of a robust, scalable global Internet infrastructure… CAIDA is a collaborative undertaking

  12. Characterization of natural titanomagnetites (Fe3-xTixO4) for studying heterogeneous electron transfer to Tc(VII) in the Hanford subsurface

    NASA Astrophysics Data System (ADS)

    Pearce, C. I.; Liu, J.; Baer, D. R.; Qafoku, O.; Heald, S. M.; Arenholz, E.; Grosz, A. E.; McKinley, J. P.; Resch, C. T.; Bowden, M. E.; Engelhard, M. H.; Rosso, K. M.

    2014-03-01

    Sediments with basaltic provenance, such as those at the Hanford nuclear reservation, Washington, USA, are rich in Fe-bearing minerals of mixed valence. These minerals are redox reactive with aqueous O2 or Fe(II), and have the potential to react with important environmental contaminants including Tc. Here we isolate, identify and characterize natural Fe(II)/Fe(III)-bearing microparticles from Hanford sediments, develop synthetic analogues and investigate their batch redox reactivity with aqueous Tc(VII). Natural Fe-rich mineral samples were isolated by magnetic separation from sediments collected at several locations on Hanford’s central plateau. This magnetic mineral fraction was found to represent up to 1 wt% of the total sediment, and be composed of 90% magnetite with minor ilmenite and hematite, as determined by X-ray diffraction. The magnetite contained variable amounts of transition metals consistent with alio- and isovalent metal substitutions for Fe. X-ray microprobe analysis showed that Ti was the most significant substituent, and that these grains could be described with the titanomagnetite formula Fe3-xTixO4, which falls between endmember magnetite (x = 0) and ulvöspinel (x = 1). The dominant composition was determined to be x = 0.15 by chemical analysis and electron probe microanalysis in the bulk, and by L-edge X-ray absorption spectroscopy and X-ray photoelectron spectroscopy at the surface. Site-level characterization of the titanomagnetites by X-ray magnetic circular dichroism showed that despite native oxidation, octahedral Fe(II) was detectable within 5 nm of the mineral surface. By testing the effect of contact with oxic Hanford and Ringold groundwaters to reduced Ringold groundwater, it was found that the concentration of this near-surface structural Fe(II) was strongly dependent on aqueous redox condition. This highlights the potential for restoring reducing equivalents and thus reduction capacity to oxidized Fe-mineral surfaces through

  13. Characterization of natural titanomagnetites (Fe3-xTixO4) for studying heterogeneous electron transfer to Tc(VII) in the Hanford subsurface

    SciTech Connect

    Pearce, Carolyn I.; Liu, Juan; Baer, Donald R.; Qafoku, Odeta; Heald, Steve M.; Arenholz, Elke; Grosz, Andrew E.; McKinley, James P.; Resch, Charles T.; Bowden, Mark E.; Engelhard, Mark H.; Rosso, Kevin M.

    2014-03-01

    Sediments with basaltic provenance, such as those at the Hanford nuclear reservation, Washington, USA, are rich in Fe-bearing minerals of mixed valence. These minerals are redox reactive with aqueous O2 or Fe(II), and have the potential to react with important environmental contaminants including Tc. Here we isolate, identify and characterize natural Fe(II)/Fe(III)-bearing microparticles from Hanford sediments, develop synthetic analogues and investigate their batch redox reactivity with aqueous Tc(VII). Natural Fe-rich mineral samples were isolated by magnetic separation from sediments collected at several locations on Hanford’s central plateau. This magnetic mineral fraction was found to represent up to 1 wt% of the total sediment, and be composed of 90% magnetite with minor ilmenite and hematite, as determined by X-ray diffraction. The magnetite contained variable amounts of transition metalsconsistent with alio- and isovalent metal substitutions for Fe. X-ray microprobe analysis showed that Ti was the most significant substituent, and that these grains could be described with the titanomagnetite formula Fe3_xTixO4, which falls between endmember magnetite (x = 0) and ulvo¨ spinel (x = 1). The dominant composition was determined to be x = 0.15 by chemical analysis and electron probe microanalysis in the bulk, and by L-edge X-ray absorption spectroscopy and X-ray photoelectron spectroscopy at the surface. Site-level characterization of the titanomagnetites by X-ray magnetic circular dichroism showed that despite native oxidation, octahedral Fe(II) was detectable within 5 nm of the mineral surface. By testing the effect of contact with oxic Hanford and Ringold groundwaters to reduced Ringold groundwater, it was found that the concentration of this near-surface structural Fe(II) was strongly dependent on aqueous redox condition. This highlights the potential for restoring reducing equivalents and thus reduction capacity to oxidized Fe-mineral surfaces through

  14. VizieR Online Data Catalog: Thorium spectrum from 250nm to 5500nm (Redman+, 2014)

    NASA Astrophysics Data System (ADS)

    Redman, S. L.; Nave, G.; Sansonetti, C. J.

    2014-04-01

    We observed the spectrum of a commercial sealed Th/Ar HCL running at 25mA for almost 15hr starting on 2011 November 2. The region of observation was limited to between 8500/cm and 28000/cm (360nm and 1200nm) by the sensitivity of the silicon photodiode detector. (5 data files).

  15. Fiber optic fluorescence detection of low-level porphyrin concentrations in occult metastases of lymph nodes

    NASA Astrophysics Data System (ADS)

    Mang, Thomas S.; McGinnis, Carolyn; Potter, William R.

    1989-06-01

    The newest developments in the evaluation of fluorescence detection in photodynamic therapy deal with the ability to distinguish tissue autofluorescence from that of injected photosensitizers. The ability to make this distinction as well as detect fluorescence slightly above background emanating from occult metastases is paramount for the diagnosis of disease. The delivery of light to excite and detect background fluorescence as well as photosensitizer fluorescence in tissues has been accomplished using two HeNe lasers emitting at 632.8 nm and 612 nm delivered through a single quartz fiber optic. Chopping at different frequencies, contributions of fluorescence may be separated. Fluorescence is picked up via a 400 micron quartz fiber optic positioned appropriately near the target tissue. Extraction procedures to quantitate Photofrino II concentration in tissues correlated with fluorescence measurements from instrumentation developed for in vivo fluorimetry were applied for the detection of low drug levels in occult metastases of the lymph nodes. These techniques have been initially applied to detect low levels of drug in DRA mice bearing the SMT-F tumor, which has been extensively studied in our laboratory. The data show the ability of the techniques to detect very low levels of porphyrin in the tumors after low, non-therapeutic doses of injected photosensitizer. The Pollard rat prostatic adenocarcinoma (PA-III) model was chosen for this study because of its characteristic pattern of metastases involving only ipsilateral lymph nodes. Early studies on this lymph node model have shown the ability of the detection device to measure low levels of drug in non-palpable occult metastases in the nodes. The findings show that the detection of small numbers of metastatic cells is possible (<100 cells) with injected DHE doses of 0.25 mg/kg.

  16. Electron multibeam technology for mask and wafer writing at 0.1 nm address grid

    NASA Astrophysics Data System (ADS)

    Platzgummer, Elmar; Klein, Christof; Loeschner, Hans

    2013-07-01

    IMS Nanofabrication realized a 50 keV electron multibeam proof-of-concept (POC) tool confirming writing principles with 0.1 nm address grid and lithography performance capability. The POC system achieves the predicted 5 nm 1 sigma blur across the 82 μm×82 μm array of 512×512 (262,144) programmable 20 nm beams. 24-nm half pitch (HP) has been demonstrated and complex patterns have been written in scanning stripe exposure mode. The first production worthy system for the 11-nm HP mask node is scheduled for 2014 (Alpha), 2015 (Beta), and first-generation high-volume manufacturing multibeam mask writer (MBMW) tools in 2016. In these MBMW systems the max beam current through the column is 1 μA. The new architecture has also the potential for 1× mask (master template) writing. Substantial further developments are needed for maskless e-beam direct write (EBDW) applications as a beam current of >2 mA is needed to achieve 100 wafer per hour industrial targets for 300 mm wafer size. Necessary productivity enhancements of more than three orders of magnitude are only possible by shrinking the multibeam optics such that 50 to 100 subcolumns can be placed on the area of a 300 mm wafer and by clustering 10 to 20 multicolumn tools. An overview of current EBDW efforts is provided.

  17. Homozygosity for a novel adenosine deaminase (ADA) nonsense mutation (Q3>X) in a child with severe combined immunodeficiency (SCID)

    SciTech Connect

    Santisteban, I.; Arrendondo-Vega, F.X.; Kelly, S. |

    1994-09-01

    A Somali girl was diagnosed with ADA-deficient SCID at 7 mo; she responded well to PEG-ADA replacement and is now 3.3 yr old. ADA mRNA was undetectable (Northern) in her cultured T cells, but was present in T cells of her parents and two sibs. All PCR-amplified exon 1 genomic clones from the patient had a C>T transition at bp 7 relative to the start of translation, replacing Gln at codon 3 (AGA) with a termination codon (TGA, Q3>X). Patient cDNA (prepared by RT-PCR with a 5{prime} primer that covered codons 1-7) had a previously described polymorphism, K80>R, but was otherwise normal, indicating that no other coding mutations were present. A predicted new genomic BfaI restriction site was used to establish her homozygosity for Q3>X and to analyze genotypes of family members. We also analyzed the segregation of a variable Alu polyA-associated TAAA repeat (AluVpA) situated 5{prime} of the ADA gene. Three different AluVpA alleles were found, one of which was only present in the father and was not associated with his Q3>X allele. Because the father`s RBCs had only {approximately}15% of normal ADA activity, we analyzed his ADA cDNA. We found a G>A transition at bp 425 that substitutes Gln for Arg142, a solvent-accessible residue, and eliminates a BsmAI site in exon 5. ADA activity of the R142>Q in vitro translation product was 20-25% of wild type ADA translation product, suggesting that R142>Q is a new {open_quote}partial{close_quote} ADA deficiency mutation. As expected, Q3>X mRNA did not yield a detectable in vitro translation product. We conclude that the patient`s father is a compound heterozygote carrying the ADA Q3>X/R142>Q genotype. {open_quote}Partial{close_quote} ADA deficiency unassociated with immunodeficiency is relatively common in individuals of African descent. The present findings and previous observations suggest that {open_quote}partial{close_quote} ADA deficiency may have had an evolutionary advantage.

  18. Prognostic Significance of Number of Positive Nodes: A Long-Term Study of One to Two Nodes Versus Three Nodes in Breast Cancer Patients

    SciTech Connect

    Tai, Patricia; Yu, Edward; Joseph, Kurian

    2010-05-01

    Purpose: Previous reports of breast cancer have generally analyzed patients with one to three positive lymph nodes as a single group, often leading to controversy regarding the practical clinical applicability. The present study separately analyzed the survival outcomes of Stage T1-T2 breast cancer patients according to whether one, two, or three axillary nodes were pathologically positive. Methods and Materials: The records of 5,996 patients were available for analysis from the population-based Saskatchewan provincial registry between 1981 and 1995. Because the reliability of the nodal assessment depends on the number of lymph nodes sampled, only those 755 patients with Stage T1-T2 disease and eight or more nodes examined were analyzed further for overall survival and cause-specific survival (CSS). Results: Patients with one and two positive nodes had nearly indistinguishable survival plots, but those with three positive nodes had a distinct trend toward worse survival. The overall survival rate of patients with one, two, and three nodes at 5, 10, and 15 years was 82.7%, 77.0%, and 79.0%, 64.8%, 60.9%, and 52.8%, and 48.8%, 48.0%, and 40.9%, respectively (p = .11). The corresponding CSS rates at 5, 10, and 15 years were 89.4%, 82.0%, and 81.3%, 78.87%, 72.9%, and 62.1%, and 72.7%. 69.0%, and 55.6% (p = .0004). The use of regional radiotherapy did not confer any apparent survival benefit in terms of either overall survival or CSS. Conclusion: Patients with one or two positive nodes had a similar CSS. However, those with three positive nodes fared worse, with a significantly reduced CSS compared with those with one or two involved nodes. Thus, the survival data among patients with one to three nodes positive reveals clearly relevant differences when analyzed separately.

  19. Efficient 1645-nm Er:YAG laser

    NASA Astrophysics Data System (ADS)

    Young, York E.; Setzler, Scott D.; Snell, Kevin J.; Budni, Peter A.; Pollak, Thomas M.; Chicklis, E. P.

    2004-05-01

    We report a resonantly fiber-laser-pumped Er:YAG laser operating at the eye-safe wavelength of 1645 nm, exhibiting 43% optical efficiency and 54% incident slope efficiency and emitting 7-W average power when repetitively Q switched at 10 kHz. To our knowledge, this is the best performance (conversion efficiency and average power) obtained from a bulk solid-state Q-switched erbium laser. At a 1.1-kHz pulse repetition frequency the laser produces 3.4-mJ pulses with a corresponding peak power of 162 kW. Frequency doubling to produce 822.5-nm, 4.7-kW pulses at 10 kHz was performed to demonstrate the laser's utility.

  20. DNA Charge Transport over 34 nm

    PubMed Central

    Slinker, Jason D.; Muren, Natalie B.; Renfrew, Sara E.; Barton, Jacqueline K.

    2011-01-01

    Molecular wires show promise in nanoscale electronics but the synthesis of uniform, long conductive molecules is a significant challenge. DNA of precise length, by contrast, is easily synthesized, but its conductivity has not been explored over the distances required for nanoscale devices. Here we demonstrate DNA charge transport (CT) over 34 nm in 100-mer monolayers on gold. Multiplexed gold electrodes modified with 100-mer DNA yield sizable electrochemical signals from a distal, covalent Nile Blue redox probe. Significant signal attenuation upon incorporation of a single base pair mismatch demonstrates that CT is DNA-mediated. Efficient cleavage of these 100-mers by a restriction enzyme indicates that the DNA adopts a native conformation that is accessible to protein binding. Similar electron transfer rates are measured through 100-mer and 17-mer monolayers, consistent with rate-limiting electron tunneling through the saturated carbon linker. This DNA-mediated CT distance of 34 nm surpasses most reports of molecular wires. PMID:21336329

  1. Social temperament and lymph node innervation

    PubMed Central

    Sloan, Erica K.; Capitanio, John P.; Tarara, Ross P.; Cole, Steve W.

    2008-01-01

    Socially inhibited individuals show increased vulnerability to viral infections, and this has been linked to increased activity of the sympathetic nervous system (SNS). To determine whether structural alterations in SNS innervation of lymphoid tissue might contribute to these effects, we assayed the density of catecholaminergic nerve fibers in 13 lymph nodes from 7 healthy adult rhesus macaques that showed stable individual differences in propensity to socially affiliate (Sociability). Tissues from Low Sociable animals showed a 2.8-fold greater density of catecholaminergic innervation relative to tissues from High Sociable animals, and this was associated with a 2.3-fold greater expression of nerve growth factor (NGF) mRNA, suggesting a molecular mechanism for observed differences. Low Sociable animals also showed alterations in lymph node expression of the immunoregulatory cytokine genes IFNG and IL4, and lower secondary IgG responses to tetanus vaccination. These findings are consistent with the hypothesis that structural differences in lymphoid tissue innervation might potentially contribute to relationships between social temperament and immunobiology. PMID:18068331

  2. Simulating cell apoptosis induced sinus node dysfunction.

    PubMed

    Kharche, Sanjay; Beling, John; Biktasheva, Irina V; Zhang, Henggui; Biktashev, Vadim N

    2013-01-01

    Sinus node dysfunction (SND) is correlated to the pacemaker sinoatrial node (SAN) cell apoptosis. This study explores the effect of such a dysfunctional SAN on electrical propagation into neighboring atrial tissue. The Fenton Karma model was extended to simulate mouse SAN and atrial cell action potentials. The cell models were incorporated into a 2D model consisting of a central SAN region surrounded by atrial tissue. The intercellular gap junctional coupling, as quantified by the diffusion constant, was estimated to give conduction speeds as observed in mouse atrial tissue. The size of mouse SAN pacemaking region was estimated using the 2D model. In multiple simulations, the effects of an increasing proportion of apoptotic pacemaker cells on atrial tissue pacing were simulated and quantified. The SAN size that gave a basal mouse atrial cycle length (ACL) of 295 ms was found to be 0.6 mm in radius. At low pacemaker cell apoptosis proportion, there was a drastic increase of ACL. At modest increase in the number of apoptotic cells, bradycardia was observed. The incidence of sinus arrest was also found to be high. When the number of apoptotic cells were 10% of the total number of pacemaking cells, all pacemaking was arrested. Phenomenological models have been developed to study mouse atrial electrophysiology and confirm experimental findings. The results show the significance of cell apoptosis as a major mechanism of SND.

  3. Battlefield connectivity via airborne communications nodes

    NASA Astrophysics Data System (ADS)

    Niessen, Charles W.

    1997-06-01

    Communications are essential to support today's information- rich tactics with distributed forces in a non-linear battlespace. Rapid deployment requirements and limited air/sea lift capability makes it difficult to transport and emplace communications infrastructure equipment in a timely manner. Furthermore, mobile forces quickly out-run fixed communications infrastructure and lose contact with command, support, and intelligence sources. What is needed is a reliable, easily deployed theater-wide communications network to provide the connectivity to separated forces; a mechanism for supplying this is a network of airborne communications nodes. A UAV flying at high altitude (65,000 ft) can provide line of sight connectivity (at up to 150 mi radius) between users that are not within line of sight of each other, and could relay communications through ground or on-board satellite gateways to provide world-wide connectivity. Since a high-altitude, long-endurance UAV (such as the Global Hawk) self-deploys from a great distance, there is no local infrastructure burden to provide this capability. Furthermore, since the range to the ground is relatively short, communications links can be established with even hand-held, low-power radios; heavy ground communications gear is not needed. This paper explores the utility of the UAV communication node concept, discussing applications, capabilities, and networking possibilities. In particular, UAVs, other aircraft, and selected ground sites could provide a backbone network for data communications on a 'warfighter's Internet.'

  4. Optimization of pulse sequences in magnetic resonance lymphography of axillary lymph nodes using magnetic nanoparticles.

    PubMed

    Gharehaghaji, Nahideh; Oghabian, Mohammad Ali; Sarkar, Saeed; Amirmohseni, Saeedeh; Ghanaati, Hossein

    2009-07-01

    Magnetic resonance imaging pulse sequences have an important role in detection of lymph nodes using magnetic nanoparticles as a contrast agent. Current imaging sequences lack an optimum pulse sequence based on lymph node relaxation times after accumulation of magnetic nanoparticles. This deficiency is due to the limited information regarding the particle uptake in tissues, and their related magnetic properties used by magnetic resonance imaging. The aim of this study is to optimize the imaging pulse sequences based on in vivo measurement of relaxation times for obtaining the best contrast-enhanced images of axillary lymph nodes. In vivo studies were performed on normal rats on a 1.5 T clinical magnetic resonance imaging system. The used contrast agent was dextran coated iron oxide nanoparticles with a mean diameter of 20 nm. Relaxation time measurements were performed for enhanced (after injection) and nonenhanced axillary lymph nodes, and the surrounding tissue. Since magnetic resonance signal depends highly on tissue parameters; T1, T2, and T2*, as well as magnetic resonance acquisition parameters; repetition time and echo time, knowing the tissue characteristics is important in order to design a right magnetic resonance protocol for each application. Based on our proposed approach, the relaxivity characteristic of the lymph node after accumulation of a contrast agent and its corresponding relaxation rate is used to define optimum imaging parameters (i.e., repetition time and echo time) for maximum contrast. According to these imaging parameter values, various T1, T2, T2* and proton density weighted sequences were applied. Optimum pulse sequences were found to be T2*-weighted fast gradient echo, T1-weighted fast spoiled gradient echo and proton density-weighted fast spin echo sequences.

  5. Laser damage database at 1064 nm

    SciTech Connect

    Rainer, F.; Gonzales, R.P.; Morgan, A.J.

    1990-03-01

    In conjunction with our diversification of laser damage testing capabilities, we have expanded upon a database of threshold measurements and parameter variations at 1064 nm. This includes all tests at low pulse-repetition frequencies (PRF) ranging from single shots to 120 Hz. These tests were conducted on the Reptile laser facility since 1987 and the Variable Pulse Laser (VPL) facility since 1988. Pulse durations ranged from 1 to 16 ns. 10 refs., 14 figs.

  6. EBM-9000: EB mask writer for product mask fabrication of 16nm half-pitch generation and beyond

    NASA Astrophysics Data System (ADS)

    Takekoshi, Hidekazu; Nakayama, Takahito; Saito, Kenichi; Ando, Hiroyoshi; Inoue, Hideo; Nakayamada, Noriaki; Kamikubo, Takashi; Nishimura, Rieko; Kojima, Yoshinori; Yashima, Jun; Anpo, Akihito; Nakazawa, Seiichi; Iijima, Tomohiro; Ohtoshi, Kenji; Anze, Hirohito; Katsap, Victor; Golladay, Steven; Kendall, Rodney

    2014-07-01

    EBM-9000 equipped with new features such as new electron optics, high current density (800A/cm2) and high speed deflection control has been developed for the 11nm technology node(tn) (half pitch (hp) 16nm). Also in parallel of aggressive introduction of new technologies, EBM-9000 inherits the 50kV variable shaped electron beam / vector scan architecture, continuous stage motion and VSB-12 data format handling from the preceding EBM series to maintain high reliability accepted by many customers. This paper will report our technical challenges and results obtained through the development.

  7. 3 Watt CW OPO tunable 604nm to 616nm for quantum optics applications

    NASA Astrophysics Data System (ADS)

    Henderson, Angus; Halfmann, Thomas; Mieth, Simon

    2012-06-01

    A continuous wave optical parametric oscillator (CW OPO) pumped by a fiber laser has been developed which emits up to 3 Watts of single longitudinal mode radiation tunable in the wavelength range 604nm to 616nm. The device is a modified version of the ``Argos'' Model 2400 commercial product by Lockheed Martin Aculight. A 15 Watt 1064nm fiber laser pumps a CW OPO based upon periodically-poled Lithium Niobate (PPLN). A short section of the nonlinear crystal is poled to allow efficient intracavity sum frequency generation (SFG) between the OPO pump and signal wavelengths to generate orange radiation. The device can be coarsely tuned by matching the poling periods and temperature within the nonlinear crystal to phase-match both OPO and SFG processes simultaneously. Fine mode-hop-free tuning of the orange wavelength of up to 100GHz range can be achieved by applying a voltage to a PZT which tunes the pump laser. By similar intracavity conversion schemes, the system offers the potential of providing high power at wavelengths from 600nm to 1400nm in addition to the direct signal and idler wavelength ranges from 1400nm to 4630nm. Such capability comes without the complexity and reliability issues which are inherent in dye and Ti:Sapphire systems. Details of the OPO system performance and its use in quantum optics applications will be provided.

  8. Comparison of GT3X accelerometer and Yamax pedometer steps/day in a free-living sample of overweight and obese adults

    Technology Transfer Automated Retrieval System (TEKTRAN)

    The purpose of this study was to compare steps/day detected by the YAMAX SW-200 pedometer versus the Actigraph GT3X accelerometer in free-living adults. Daily YAMAX and GT3X steps were collected from a sample of 23 overweight and obese participants (78% female; age = 52.6 +/- 8.4 yr.; BMI = 31.0 +/-...

  9. Study of program defects of 22nm nanoimprint template with an advanced e-beam inspection system

    NASA Astrophysics Data System (ADS)

    Hiraka, Takaaki; Mizuochi, Jun; Nakanishi, Yuko; Yusa, Satoshi; Sasaki, Shiho; Kurihara, Masaaki; Toyama, Nobuhito; Morikawa, Yasutaka; Mohri, Hiroshi; Hayashi, Naoya; Xiao, Hong; Kuan, Chiyan; Wang, Fei; Ma, Long; Zhao, Yan; Jau, Jack

    2009-10-01

    Nanoimprint lithography (NIL) is a candidate of alternative, low cost of ownership lithography solution for deep nano-meter device manufacturing12. For the NIL template pattern making, we have been developing the processes with 100keV SB EB writer and 50keV VSB EB writer to achieve the fine resolution of near 20nm1-7. However, inspection of nanoimprint template posed a big challenge to inspection system due to the small geometry, 1x comparing to 4x of Optical mask and EUV mask. Previous studies of nanoimprint template inspection were performed indirectly on a stamped wafer and/or on a round quartz wafer13. Electron beam inspection (EBI) systems have been widely used in semiconductor fabs in nanometer technology nodes. Most commonly EBI applications are electrical defects, or voltage contrast (VC) defects detection and monitoring8-11. In this study, we used a mask EBI system developed by Hermes Microvision, Inc. (HMI) to directly inspect a NIL template with line/space and hole patterns half pitched from 22nm to 90nm and with program defects sized from 4nm to 92nm. Capability of inspection with 10nm pixel size has been demonstrated and capability of capturing program defects sized 12nm and smaller has been shown. This study proved the feasibility of EBI as inspection solution of nanoimprint template for 22nmHP and beyond.

  10. Novel method and applications for labeling and identifying lymph nodes

    NASA Astrophysics Data System (ADS)

    Kiraly, Atilla P.; Naidich, David P.; Guendel, Lutz; Zhang, Li; Novak, Carol L.

    2007-03-01

    The lymphatic system comprises a series of interconnected lymph nodes that are commonly distributed along branching or linearly oriented anatomic structures. Physicians must evaluate lymph nodes when staging cancer and planning optimal paths for nodal biopsy. This process requires accurately determining the lymph node's position with respect to major anatomical landmarks. In an effort to standardize lung cancer staging, The American Joint Committee on Cancer (AJCC) has classified lymph nodes within the chest into 4 groups and 14 sub groups. We present a method for automatically labeling lymph nodes according to this classification scheme, in order to improve the speed and accuracy of staging and biopsy planning. Lymph nodes within the chest are clustered around the major blood vessels and the airways. Our fully automatic labeling method determines the nodal group and sub-group in chest CT data by use of computed airway and aorta centerlines to produce features relative to a given node location. A classifier then determines the label based upon these features. We evaluate the efficacy of the method on 10 chest CT datasets containing 86 labeled lymph nodes. The results are promising with 100% of the nodes assigned to the correct group and 76% to the correct sub-group. We anticipate that additional features and training data will further improve the results. In addition to labeling, other applications include automated lymph node localization and visualization. Although we focus on chest CT data, the method can be generalized to other regions of the body as well as to different imaging modalities.

  11. Data driven CAN node reliability assessment for manufacturing system

    NASA Astrophysics Data System (ADS)

    Zhang, Leiming; Yuan, Yong; Lei, Yong

    2017-01-01

    The reliability of the Controller Area Network(CAN) is critical to the performance and safety of the system. However, direct bus-off time assessment tools are lacking in practice due to inaccessibility of the node information and the complexity of the node interactions upon errors. In order to measure the mean time to bus-off(MTTB) of all the nodes, a novel data driven node bus-off time assessment method for CAN network is proposed by directly using network error information. First, the corresponding network error event sequence for each node is constructed using multiple-layer network error information. Then, the generalized zero inflated Poisson process(GZIP) model is established for each node based on the error event sequence. Finally, the stochastic model is constructed to predict the MTTB of the node. The accelerated case studies with different error injection rates are conducted on a laboratory network to demonstrate the proposed method, where the network errors are generated by a computer controlled error injection system. Experiment results show that the MTTB of nodes predicted by the proposed method agree well with observations in the case studies. The proposed data driven node time to bus-off assessment method for CAN networks can successfully predict the MTTB of nodes by directly using network error event data.

  12. FPGA chip performance improvement with gate shrink through alternating PSM 90nm process

    NASA Astrophysics Data System (ADS)

    Yu, Chun-Chi; Shieh, Ming-Feng; Liu, Erick; Lin, Benjamin; Ho, Jonathan; Wu, Xin; Panaite, Petrisor; Chacko, Manoj; Zhang, Yunqiang; Lei, Wen-Kang

    2005-11-01

    In the post-physical verification space called 'Mask Synthesis' a key component of design-for-manufacturing (DFM), double-exposure based, dark-field, alternating PSM (Alt-PSM) is being increasingly applied at the 90nm node in addition with other mature resolution enhancement techniques (RETs) such as optical proximity correction (OPC) and sub-resolution assist features (SRAF). Several high-performance IC manufacturers already use alt-PSM technology in 65nm production. At 90nm having strong control over the lithography process is a critical component in meeting targeted yield goals. However, implementing alt-PSM in production has been challenging due to several factors such as phase conflict errors, mask manufacturing, and the increased production cost due to the need for two masks in the process. Implementation of Alt-PSM generally requires phase compliance rules and proper phase topology in the layout and this has been successful for the technology node with these rules implemented. However, this may not be true for a mature, production process technology, in this case 90 nm. Especially, in the foundry-fabless business model where the foundry provides a standard set of design rules to its customers for a given process technology, and where not all the foundry customers require Alt-PSM in their tapeout flow. With minimum design changes, design houses usually are motivated by higher product performance for the existing designs. What follows is an in-depth review of the motivation to apply alt-PSM on a production FPGA, the DFM challenges to each partner faced, its effect on the tapeout flow, and how design, manufacturing, and EDA teams worked together to resolve phase conflicts, tapeout the chip, and finally verify the silicon results in production.

  13. Popliteal lymph node assay: facts and perspectives.

    PubMed

    Ravel, Guillaume; Descotes, Jacques

    2005-01-01

    The popliteal lymph node assay (PLNA) derives from the hypothesis that some supposedly immune-mediated adverse effects induced by certain pharmaceuticals involve a mechanism resembling a graft-versus-host reaction. The injection of many but not all of these compounds into the footpad of mice or rats produces an increase in the weight and/or cellularity of the popliteal lymph node in the treated limb (direct PLNA). Some of the compounds known to cause these adverse effects in humans, however, failed to induce a positive PLNA response, leading to refinements of the technique to include pretreatment with enzyme inducers, depletion of CD4(+) T cells or additional endpoints such as histological examination, lymphocyte subset analysis and cytokine fingerprinting. Alternative approaches have been used to improve further the predictability of the assay. In the secondary PLNA, the test compound is injected twice in order to illicit a greater secondary response, thus suggesting a memory-specific T cell response. In the adoptive PLNA, popliteal lymph node cells from treated mice are injected into the footpad of naive mice; a marked response to a subsequent footpad challenge demonstrates the involvement of T cells. Finally, the reporter antigens TNP-Ficoll and TNP-ovalbumin are used to differentiate compounds that induce responses involving neo-antigen help or co-stimulatory signals (modified PLNA). The PLNA is increasingly considered as a tool for detection of the potential to induce both sensitization and autoimmune reactions. A major current limitation is validation. A small inter-laboratory validation study of the direct PLNA found consistent results. No such study has been performed using an alternative protocol. Other issues include selection of the optimal protocol for an improved prediction of sensitization vs autoimmunity, and the elimination of false-positive responses due to primary irritation. Finally, a better understanding of underlying mechanisms is essential to

  14. Enhanced performance of CH3NH3PbI3-x Cl x perovskite solar cells by CH3NH3I modification of TiO2-perovskite layer interface.

    PubMed

    Wang, Wen; Zhang, Zongbao; Cai, Yangyang; Chen, Jinshan; Wang, Jianming; Huang, Riyan; Lu, Xubing; Gao, Xingsen; Shui, Lingling; Wu, Sujuan; Liu, Jun-Ming

    2016-12-01

    In this work, perovskite solar cells (PSCs) with CH3NH3PbI3-x Cl x as active layer and spiro-OMeTAD as hole-transport media have been fabricated by one-step method. The methylammonium iodide (CH3NH3I) solution with different concentrations is used to modify the interface between mesoporous TiO2 (meso-TiO2) film and CH3NH3PbI3-x Cl x perovskite layer. Several techniques including X-ray diffraction, scanning electron microscopy, optical absorption, electrochemical impedance spectroscopy (EIS) and photoluminescence are used to investigate the effect of the interfacial modification. It is found that the interfacial modification by CH3NH3I enhance the crystallinity and increase the grain size of CH3NH3PbI3-x Cl x layer, and improve the surface wetting properties of perovskite precursor on meso-TiO2 film. The sunlight absorption and external quantum efficiency of PSCs in the visible region with wavelength less than 600 nm have been improved. The Nyquist plots obtained from the EIS suggest that the CH3NH3I modification can reduce the charge recombination rates. The photoluminescence measurement shows that the exciton dissociation in the modified devices is more effective than that in the control samples. The photovoltaic performance of the modified devices can be significantly improved with respect to the reference (control) devices. The CH3NH3I modified devices at the optimized concentration demonstrate the average power conversion efficiency of 12.27 % in comparison with the average efficiency of 9.68 % for the reference devices.

  15. Enhanced performance of CH3NH3PbI3- x Cl x perovskite solar cells by CH3NH3I modification of TiO2-perovskite layer interface

    NASA Astrophysics Data System (ADS)

    Wang, Wen; Zhang, Zongbao; Cai, Yangyang; Chen, Jinshan; Wang, Jianming; Huang, Riyan; Lu, Xubing; Gao, Xingsen; Shui, Lingling; Wu, Sujuan; Liu, Jun-Ming

    2016-06-01

    In this work, perovskite solar cells (PSCs) with CH3NH3PbI3- x Cl x as active layer and spiro-OMeTAD as hole-transport media have been fabricated by one-step method. The methylammonium iodide (CH3NH3I) solution with different concentrations is used to modify the interface between mesoporous TiO2 (meso-TiO2) film and CH3NH3PbI3- x Cl x perovskite layer. Several techniques including X-ray diffraction, scanning electron microscopy, optical absorption, electrochemical impedance spectroscopy (EIS) and photoluminescence are used to investigate the effect of the interfacial modification. It is found that the interfacial modification by CH3NH3I enhance the crystallinity and increase the grain size of CH3NH3PbI3- x Cl x layer, and improve the surface wetting properties of perovskite precursor on meso-TiO2 film. The sunlight absorption and external quantum efficiency of PSCs in the visible region with wavelength less than 600 nm have been improved. The Nyquist plots obtained from the EIS suggest that the CH3NH3I modification can reduce the charge recombination rates. The photoluminescence measurement shows that the exciton dissociation in the modified devices is more effective than that in the control samples. The photovoltaic performance of the modified devices can be significantly improved with respect to the reference (control) devices. The CH3NH3I modified devices at the optimized concentration demonstrate the average power conversion efficiency of 12.27 % in comparison with the average efficiency of 9.68 % for the reference devices.

  16. Experimental study of 99mTc-aluminum oxide use for sentinel lymph nodes detection

    NASA Astrophysics Data System (ADS)

    Chernov, V. I.; Sinilkin, I. G.; Zelchan, R. V.; Medvedeva, A. A.; Lyapunov, A. Yu.; Bragina, O. D.; Varlamova, N. V.; Skuridin, V. S.

    2016-08-01

    The purpose of the study was a comparative research in the possibility of using the radiopharmaceuticals 99mTc-Al2O3 and 99mTc-Nanocis for visualizing sentinel lymph nodes. The measurement of the sizes of 99mTc-Al2O3 and 99mTc-Nanocis colloidal particles was performed in seven series of radiopharmaceuticals. The pharmacokinetics of 99mTc-Al2O3 and 99mTc-Nanocis was researched on 50 white male rats. The possibility of the use of 99mTc-Al2O3 and 99mTc-Nanocis for lymphoscintigraphy was studied in the experiments on 12 white male rats. The average dynamic diameter of the sol particle was 52-77 nm for 99mTc-Al2O3 and 16.7-24.5 nm for 99mTc-Nanocis. Radiopharmaceuticals accumulated in the inguinal lymph node in 1 hour after administration; the average uptake of 99mTc-Al2O3 was 8.6% in it, and the accumulation of 99mTc-Nanocis was significantly lower—1.8% (p < 0.05). In all study points the average uptake of 99mTc-Al2O3 in the lymph node was significantly higher than 99mTc-Nanocis accumulation. The results of dynamic scintigraphic studies in rats showed that 99mTc-Al2O3 and 99mTc-Nanocis actively accumulated into the lymphatic system. By using 99mTc-Al2O3 inguinal lymph node was determined in 5 minutes after injection and clearly visualized in all the animals in the 15th minute, when the accumulation became more than 1% of the administered dose. Further observation indicated that the 99mTc-Al2O3 accumulation reached a plateau in a lymph node (average 10.5%) during 2-hour study and then its accumulation remained practically at the same level, slightly increasing to 12% in 24 hours. In case of 99mTc-Nanocis inguinal lymph node was visualized in all animals for 15 min when it was accumulated on the average 1.03% of the administered dose. Plateau of 99mTc-Nanocis accumulation in the lymph node (average 2.05%) occurred after 2 hours of the study and remained almost on the same level (in average 2.3%) for 24 hours. Thus, the experimental study of a new domestic

  17. A Rutile Chevron Modulation in Delafossite-Like Ga3-xIn3TixO9+x/2.

    PubMed

    Rickert, Karl; Boullay, Philippe; Malo, Sylvie; Caignaert, Vincent; Poeppelmeier, Kenneth R

    2016-05-02

    The structure solution of the modulated, delafossite-related, orthorhombic Ga3-xIn3TixO9+x/2 for x = 1.5 is reported here in conjunction with a model describing the modulation as a function of x for the entire system. Previously reported structures in the related A3-xIn3TixO9+x/2 (A = Al, Cr, or Fe) systems use X-ray diffraction to determine that the anion lattice is the source of modulation. Neutron diffraction, with its enhanced sensitivity to light atoms, offers a route to solving the modulation and is used here, in combination with precession electron diffraction tomography (PEDT), to solve the structure of Ga1.5In3Ti1.5O9.75. We construct a model that describes the anion modulation through the formation of rutile chevrons as a function of x. This model accommodates the orthorhombic phase (1.5 ≤ x ≤ 2.1) in the Ga3-xIn3TixO9+x/2 system, which transitions to a biphasic mixture (2.2 ≤ x ≤ 2.3) with a monoclinic, delafossite-related phase (2.4 ≤ x ≤ 2.5). The optical band gaps of this system are determined, and are stable at ∼3.4 eV before a ∼0.4 eV decrease between x = 1.9 and 2.0. After this decrease, stability resumes at ∼3.0 eV. Resistance to oxidation and reduction is also presented.

  18. PAK Inactivation Impairs Social Recognition in 3xTg-AD Mice without Increasing Brain Deposition of Tau and Aβ

    PubMed Central

    Arsenault, Dany; Dal-Pan, Alexandre; Tremblay, Cyntia; Bennett, David A.; Guitton, Matthieu J.; De Koninck, Yves; Tonegawa, Susumu

    2013-01-01

    Defects in p21-activated kinase (PAK) are suspected to play a role in cognitive symptoms of Alzheimer's disease (AD). Dysfunction in PAK leads to cofilin activation, drebrin displacement from its actin-binding site, actin depolymerization/severing, and, ultimately, defects in spine dynamics and cognitive impairment in mice. To determine the role of PAK in AD, we first quantified PAK by immunoblotting in homogenates from the parietal neocortex of subjects with a clinical diagnosis of no cognitive impairment (n = 12), mild cognitive impairment (n = 12), or AD (n = 12). A loss of total PAK, detected in the cortex of AD patients (−39% versus controls), was correlated with cognitive impairment (r2 = 0.148, p = 0.027) and deposition of total and phosphorylated tau (r2 = 0.235 and r2 = 0.206, respectively), but not with Aβ42 (r2 = 0.056). Accordingly, we found a decrease of total PAK in the cortex of 12- and 20-month-old 3xTg-AD mice, an animal model of AD-like Aβ and tau neuropathologies. To determine whether PAK dysfunction aggravates AD phenotype, 3xTg-AD mice were crossed with dominant-negative PAK mice. PAK inactivation led to obliteration of social recognition in old 3xTg-AD mice, which was associated with a decrease in cortical drebrin (−25%), but without enhancement of Aβ/tau pathology or any clear electrophysiological signature. Overall, our data suggest that PAK decrease is a consequence of AD neuropathology and that therapeutic activation of PAK may exert symptomatic benefits on high brain function. PMID:23804095

  19. Improved thermoelectric properties of Bi2Te3-xSex alloys by melt spinning and resistance pressing sintering

    NASA Astrophysics Data System (ADS)

    Cai, Xinzhi; Fan, Xi'an; Rong, Zhenzhou; Yang, Fan; Gan, Zhanghua; Li, Guangqiang

    2014-03-01

    Starting from bismuth, tellurium and selenium chunks, n-type Bi2Te3-xSex (x ⩽ 0.3) alloys were obtained by melt spinning (MS) combined with a resistance pressing sintering (RPS) process. The phases, microstructures and compositions of the samples were evaluated by x-ray diffraction, field emission scanning electron microscopy, and energy dispersive x-ray spectroscopy during each step in the preparation process, respectively. The influences of Se doping, MS and RPS processes on the thermoelectric (TE) properties of Bi2Te3-xSex alloys were investigated in detail. The Bi2Te3-xSex powders could be well compacted by the RPS process and the relative densities of the bulks prepared by RPS were all higher than 96%. The partially oriented lamellar structure could be observed at some regions of the samples prepared by RPS, and the monolayer thickness of the lamellar structure in the MS-RPS samples was smaller than that in the smelting-RPS sample. The MS process was confirmed as an excellent method to obtain fine microstructures and low lattice thermal conductivity for the TE materials. All evidence about electrical and thermal transport properties suggested that suitably increasing the Se content could effectively improve the ZT value. The maximum ZT value of 0.84 was obtained for the Bi2Te2.7Se0.3 prepared by MS-RPS at 423 K. As opposed to the conventional hot pressing and spark plasma sintering, the RPS method introduced here is more suitable for practical industrial application due to its cost saving and high efficiency.

  20. 75 FR 81437 - Amendment of Class E Airspace; Taos, NM

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-28

    ... Taos, NM. Decommissioning of the Ski non-directional beacon (NDB) at Taos Regional Airport, Taos, NM... Taos, NM area. Decommissioning of the Ski NDB and cancellation of the NDB approach at Taos...

  1. Deep ultraviolet (254 nm) focal plane array

    NASA Astrophysics Data System (ADS)

    Cicek, Erdem; Vashaei, Zahra; McClintock, Ryan; Razeghi, Manijeh

    2011-10-01

    We report the synthesis, fabrication and testing of a 320 × 256 focal plane array (FPA) of back-illuminated, solarblind, p-i-n, AlxGa1-xN-based detectors, fully realized within our research laboratory. We implemented a novel pulsed atomic layer deposition technique for the metalorganic chemical vapor deposition (MOCVD) growth of crackfree, thick, and high Al composition AlxGa1-xN layers. Following the growth, the wafer was processed into a 320 × 256 array of 25 μm × 25 μm pixels on a 30 μm pixel-pitch and surrounding mini-arrays. A diagnostic mini-array was hybridized to a silicon fan-out chip to allow the study of electrical and optical characteristics of discrete pixels of the FPA. At a reverse bias of 1 V, an average photodetector exhibited a low dark current density of 1.12×10-8 A/cm2. Solar-blind operation is observed throughout the array with peak detection occurring at wavelengths of 256 nm and lower and falling off three orders of magnitude by 285 nm. After indium bump deposition and dicing, the FPA is hybridized to a matching ISC 9809 readout integrated circuit (ROIC). By developing a novel masking technology, we significantly reduced the visible response of the ROIC and thus the need for external filtering to achieve solar- and visible-blind operation is eliminated. This allowed the FPA to achieve high external quantum efficiency (EQE): at 254 nm, average pixels showed unbiased peak responsivity of 75 mA/W, which corresponds to an EQE of ~37%. Finally, the uniformity of the FPA and imaging properties are investigated.

  2. Laser-induced bulk damage of silica glass at 355nm and 266nm

    NASA Astrophysics Data System (ADS)

    Kashiwagi, R.; Aramomi, S.

    2016-12-01

    Laser processing machines using Nd:YAG 3rd harmonic wave (355 nm) and 4th harmonic wave (266 nm) have been developed and put into practical use lately. Due to this, optical elements with high laser durability to 355 nm and 266 nm are required. Silica glass is the optical element which has high UV transmission and high laser durability. Laser-induced surface damage of the silica glass has been studied in detail, but we hardly have the significant knowledge of laserinduced bulk damage. This knowledge is required in order to evaluate the silica glass itself. That is because cracks and scratches on the surface give rise to a higher possibility of damage. Therefore, we studied the laser durability of a variety of the silica glass samples by 1-on-1 and S-on-1 laser-induced bulk damage threshold (LIDT) at 355 nm and 266 nm. In this study, we gained knowledge in three areas about bulk damage to the silica glass. First, the LIDT became lower as shot counts increased. Second, the LIDT decreased as the hydroxyl content in the silica glass increased. Last, the LIDT became higher as the hydrogen concentration in the silica glass increased. Under the UV irradiation, impurities are generated and the silica glass absorbs more light. Therefore, the LIDT decreased as shot counts increased. Also, the hydroxyl in particular generates more impurities, so damage easily occurs. On the other hand, the hydrogen reacts with impurities and absorption is suppressed. Based on these results, we can improve laser durability at 355 nm and 266 nm by reducing the hydroxyl content and increasing the hydrogen concentration in the silica glass.

  3. Yb fiber amplifier at 972.5 nm with frequency quadrupling to 243.1 nm

    NASA Astrophysics Data System (ADS)

    Burkley, Z.; Rasor, C.; Cooper, S. F.; Brandt, A. D.; Yost, D. C.

    2017-01-01

    We demonstrate a continuous-wave ytterbium-doped fiber amplifier which produces 6.3 W at a wavelength of 972.5 nm. We frequency-quadruple this source in two resonant doubling stages to generate 530 mW at 243.1 nm. Radiation at this wavelength is required to excite the 1S-2S transition in atomic hydrogen and could therefore find application in experimental studies of hydrogen and anti-hydrogen.

  4. GAS eleven node thermal model (GEM)

    NASA Technical Reports Server (NTRS)

    Butler, Dan

    1988-01-01

    The Eleven Node Thermal Model (GEM) of the Get Away Special (GAS) container was originally developed based on the results of thermal tests of the GAS container. The model was then used in the thermal analysis and design of several NASA/GSFC GAS experiments, including the Flight Verification Payload, the Ultraviolet Experiment, and the Capillary Pumped Loop. The model description details the five cu ft container both with and without an insulated end cap. Mass specific heat values are also given so that transient analyses can be performed. A sample problem for each configuration is included as well so that GEM users can verify their computations. The model can be run on most personal computers with a thermal analyzer solution routine.

  5. Bradycardia: sinus and AV node dysfunction.

    PubMed

    Pellegrini, Cara N; Scheinman, Melvin M

    2015-09-01

    The surface electrocardiogram (ECG) holds many clues with regard to the etiology of bradycardia and site of atrioventricular (AV) block. Bedside maneuvers may prove helpful in cases of 2:1 AV block or situations where the data is not all concordant. Wenckebach conduction may occur in any region of the heart, and there are nonpathologic mimickers of Mobitz II AV block as well. The surface ECG may aid in the inference of etiology for better than expected or slowed rather than blocked AV conduction. Sinus node dysfunction may present in several forms and often accompanies other conduction system disease. On occasion invasive studies may be required to help elucidate the mechanism of bradycardia.

  6. Topological Dirac line nodes in centrosymmetric semimetals

    NASA Astrophysics Data System (ADS)

    Kim, Youngkuk; Wieder, Benjamin; Kane, Charles; Rappe, Andrew; TI seed Team

    Dirac line nodes (DLNs) are one-dimensional lines of Dirac band-touching points, characterized by linear dispersion in only a single direction in momentum space. In the presence of inversion symmetry and time-reversal symmetry, crystals with vanishing spin-orbit coupling can host topologically protected DLNs. Recently, we have proposed and characterized a novel Z2 class of DLN semimetals [1]. We present Z2 topological invariants, dictating the presence of DLNs, based on the parity eigenvalues at the time-reversal invariant crystal momenta. Our first-principles calculations show that DLNs can be realized in Cu3N in an anti-ReO3 structure via a metal-insulator electronic transition, driven by transition metal doping. We also discuss the resultant surface states and the effects of spin-orbit coupling.

  7. Fast neutron treatment of cervical lymph nodes

    SciTech Connect

    Fowler, J.F.

    1983-09-01

    An editonal is presented which discusses a brief interim report of the prospective, randomized, RTOG study of fast neutron radiation therapy, mixed neutron and photon treatment and standard photon radiation therapy for inoperable, advanced squamous cell carcinomas of the head and neck excluding brain. The authors point out that neck nodes serve as an excellent in vivo test site to evaluate the results of fast neutron radiotherapy. The tumor volume is easily measured and the responses of both tumor and normal tissues are easily assessed. The editorial continues that it is all too rare to see the result of a randomized clinical trial in oncology which shows a statistically significant improvement, has a reasonably large number of patients, and is followed-up for a sufficiently long time. It is therefore a particular pleasure to see these three factors occurring together in the report of neutron treatments by Griffin.

  8. Effect of synthesis route on the structure of Nd 3- xBa 3+ xCu 6O 14-2 δ ( x=0,1) system: a neutron diffraction study

    NASA Astrophysics Data System (ADS)

    Kini, N. S.; Shivashankar, S. A.; Umarji, A. M.; Yelon, W. B.; Malik, S. K.

    2002-04-01

    Structural studies on Nd 3- xBa 3+ xCu 6O 14-2 δ with 0≤ x≤1 were carried out by Rietveld refinement procedure using neutron diffraction data. The composition x=1 was prepared both by the solid-state method and the nitrate-decomposition method. Quantitative multiphase analysis coupled with variation in the method of synthesis has shown conclusively that Nd did substitute for Ba even in a stoichiometric composition NdBa 2Cu 3O 7- δ, irrespective of the method of synthesis. The fractional atomic substitution of Nd at the Ba site has been determined to be about 15%. The composition x=0, synthesised by the nitrate-decomposition method, has been found to be tetragonal with the space group P4/ mmm. Nd has been found to substitute for Ba according to Nd(Ba 0.75Nd 0.25) 2Cu 3O 7- δ and no random distribution of cations has been found along the c-direction. The observed tetragonality has been attributed to the additional oxygen taken into the basal (001) plane due to the substitution of trivalent Nd at the divalent Ba site.

  9. 248nm silicon photoablation: Microstructuring basics

    NASA Astrophysics Data System (ADS)

    Poopalan, P.; Najamudin, S. H.; Wahab, Y.; Mazalan, M.

    2015-05-01

    248nm pulses from a KrF excimer laser was used to ablate a Si wafer in order to ascertain the laser pulse and energy effects for use as a microstructuring tool for MEMS fabrication. The laser pulses were varied between two different energy levels of 8mJ and 4mJ while the number of pulses for ablation was varied. The corresponding ablated depths were found to range between 11 µm and 49 µm, depending on the demagnified beam fluence.

  10. Photolysis of formic acid at 355 nm

    NASA Astrophysics Data System (ADS)

    Martinez, Denhi; Bautista, Teonanacatl; Guerrero, Alfonso; Alvarez, Ignacio; Cisneros, Carmen

    2015-05-01

    Formic acid is well known as a food additive and recently an application on fuel cell technology has emerged. In this work we have studied the dissociative ionization process by multiphoton absorption of formic acid molecules at 355nm wavelength photons, using TOF spectrometry in reflectron mode (R-TOF). Some of the most abundant ionic fragments produced are studied at different settings of the laser harmonic generator. The dependence of the products on these conditions is reported. This work was supported by CONACYT Project 165410 and PAPIIT IN102613 and IN101215.

  11. 248nm silicon photoablation: Microstructuring basics

    SciTech Connect

    Poopalan, P.; Najamudin, S. H.; Wahab, Y.; Mazalan, M.

    2015-05-15

    248nm pulses from a KrF excimer laser was used to ablate a Si wafer in order to ascertain the laser pulse and energy effects for use as a microstructuring tool for MEMS fabrication. The laser pulses were varied between two different energy levels of 8mJ and 4mJ while the number of pulses for ablation was varied. The corresponding ablated depths were found to range between 11 µm and 49 µm, depending on the demagnified beam fluence.

  12. Quantification of microvessels in canine lymph nodes.

    PubMed

    Tonar, Zbynĕk; Egger, Gunter F; Witter, Kirsti; Wolfesberger, Birgitt

    2008-10-01

    Quantification of microvessels in tumors is mostly based on counts of vessel profiles in tumor hot spots. Drawbacks of this method include low reproducibility and large interobserver variance, mainly as a result of individual differences in sampling of image fields for analysis. Our aim was to test an unbiased method for quantifying microvessels in healthy and tumorous lymph nodes of dogs. The endothelium of blood vessels was detected in paraffin sections by a combination of immunohistochemistry (von Willebrand factor) and lectin histochemistry (wheat germ agglutinin) in comparison with detection of basal laminae by laminin immunohistochemistry or silver impregnation. Systematic uniform random sampling of 50 image fields was performed during photo-documentation. An unbiased counting frame (area 113,600 microm(2)) was applied to each micrograph. The total area sampled from each node was 5.68 mm(2). Vessel profiles were counted according to stereological counting rules. Inter- and intraobserver variabilities were tested. The application of systematic uniform random sampling was compared with the counting of vessel profiles in hot spots. The unbiased estimate of the number of vessel profiles per unit area ranged from 100.5 +/- 44.0/mm(2) to 442.6 +/- 102.5/mm(2) in contrast to 264 +/- 72.2/mm(2) to 771.0 +/- 108.2/mm(2) in hot spots. The advantage of using systematic uniform random sampling is its reproducibility, with reasonable interobserver and low intraobserver variance. This method also allows for the possibility of using archival material, because staining quality is not limiting as it is for image analysis, and artifacts can easily be excluded. However, this method is comparatively time-consuming.

  13. Nonlinear absorption properties of DKDP crystal at 263 nm and 351 nm

    NASA Astrophysics Data System (ADS)

    Chai, Xiangxu; Zhu, Qihua; Feng, Bin; Li, Fuquan; Feng, Xi; Wang, Fang; Han, Wei; Wang, Liquan

    2017-02-01

    At the wavelength of 263 nm and 351 nm, the nonlinear absorption curves of 66% deuterated DKDP crystal were measured in the geometries of beam polarizing along the optics axis (E∥Z) and perpendicular to it (E⊥Z). The results indicate that the nonlinear absorption in the E⊥Z geometry is stronger than that in the E∥Z geometry. The nonlinear absorptions at 263 nm and 351 nm are identified to two- and three-photon absorption, respectively. The theoretical fits to the experimental data yields the two-photon absorption coefficients of 0.32 ± 0.03 cm/GW (E⊥Z geometry) and 0.17 ± 0.02 cm/GW (E∥Z geometry) at 263 nm, and the three-photon absorption coefficients of (8.1 ± 1.1) × 10-4 cm3/GW2 (E⊥Z geometry) and (2.2 ± 0.5) × 10-4 cm3/GW2 (E∥Z geometry) at 351 nm.

  14. Inflammatory myofibroblastic tumor of inguinal lymph nodes, simulating lymphoma.

    PubMed

    Gandhi, Akansha; Malhotra, Kiran Preet; Sharma, Sonal

    2015-01-01

    Multiple enlarged lymph nodes in an elderly female patient can have varied etiologies as well as histologic pictures. We are presenting the case of a 53-year-old female who presented with inguinal lymphadenopathy with fever, which was clinically misconstrued as lymphoma. Cytology could not exclude a lymphoma. Histology led to the unusual diagnosis of inflammatory myofibroblastic tumor of lymph node in this case. Inflammatory myofibroblastic tumor of the lymph node is a rare, distinctive reactive proliferative pattern in the lymph node which involves proliferation of the connective tissue elements of the lymph node, admixed with lymphocytes, plasma cells, eosinophils, and histiocytes. Multiple etiologic agents have been suggested in existing literature. Despite extensive search, no definite attributable cause could be sought. It is now widely accepted that inflammatory pseudotumor of the lymph node is a non-neoplastic proliferation which has a benign clinical course and excellent prognosis after surgical resection.

  15. Dirac node arcs in PtSn4

    NASA Astrophysics Data System (ADS)

    Wu, Yun; Wang, Lin-Lin; Mun, Eundeok; Johnson, D. D.; Mou, Daixiang; Huang, Lunan; Lee, Yongbin; Bud'Ko, S. L.; Canfield, P. C.; Kaminski, Adam

    2016-07-01

    In topological quantum materials the conduction and valence bands are connected at points or along lines in the momentum space. A number of studies have demonstrated that several materials are indeed Dirac/Weyl semimetals. However, there is still no experimental confirmation of materials with line nodes, in which the Dirac nodes form closed loops in the momentum space. Here we report the discovery of a novel topological structure--Dirac node arcs--in the ultrahigh magnetoresistive material PtSn4 using laser-based angle-resolved photoemission spectroscopy data and density functional theory calculations. Unlike the closed loops of line nodes, the Dirac node arc structure arises owing to the surface states and resembles the Dirac dispersion in graphene that is extended along a short line in the momentum space. We propose that this reported Dirac node arc structure is a novel topological state that provides an exciting platform for studying the exotic properties of Dirac fermions.

  16. Alternative staging of regional lymph nodes in gastric cancer

    PubMed Central

    Szczepanik, Antoni M.; Paszko, Agata; Szura, Miroslaw; Scully-Horner, Thecla; Kulig, Jan

    2016-01-01

    The TNM pN stage based on the number of metastatic lymph nodes is an independent prognostic factor in gastric cancer. Many studies have highlighted the phenomenon of stage migration and problems in comparing groups of patients with different numbers of total lymph nodes harvested within TNM staging. The current version of UICC/AJCC and JGCA TNM classifications postulates a minimal number of 16 lymph nodes as the base for N stage determination. Alternative systems such as lymph node ratio (LNR), positive to negative lymph node ratio (PNLNR), and LOGODDS (or LODDS), were implemented to increase the quality of LN assessment. These methods have reached the background in the literature, but to date no standard approach according to the cut-offs for the stages has been implemented. LOGODDS is the method that most reflects the number of harvested lymph nodes. The rationale for alternative staging methods, their correlations, and limitations are presented. PMID:27713774

  17. Nodal staging of colorectal carcinomas and sentinel nodes

    PubMed Central

    Cserni, G

    2003-01-01

    This review surveys the staging systems used for the classification of colorectal carcinomas, including the TNM system, and focuses on the assessment of the nodal stage of the disease. It reviews the quantitative requirements for a regional metastatic work up, and some qualitative features of lymph nodes that may help in the selection of positive and negative lymph nodes. Identification of the sentinel lymph nodes (those lymph nodes that have direct drainage from the primary tumour site) is one such qualitative feature that is claimed to allow the upstaging of colorectal carcinomas via an oriented, enhanced pathological work up. Current evidence in favour of a change in the requisite of assessing as may lymph nodes as is possible, and concentrating the efforts on only a selected number of lymph nodes, is weak. PMID:12719450

  18. Identification of hybrid node and link communities in complex networks.

    PubMed

    He, Dongxiao; Jin, Di; Chen, Zheng; Zhang, Weixiong

    2015-03-02

    Identifying communities in complex networks is an effective means for analyzing complex systems, with applications in diverse areas such as social science, engineering, biology and medicine. Finding communities of nodes and finding communities of links are two popular schemes for network analysis. These schemes, however, have inherent drawbacks and are inadequate to capture complex organizational structures in real networks. We introduce a new scheme and an effective approach for identifying complex mixture structures of node and link communities, called hybrid node-link communities. A central piece of our approach is a probabilistic model that accommodates node, link and hybrid node-link communities. Our extensive experiments on various real-world networks, including a large protein-protein interaction network and a large network of semantically associated words, illustrated that the scheme for hybrid communities is superior in revealing network characteristics. Moreover, the new approach outperformed the existing methods for finding node or link communities separately.

  19. Verification of E-Beam direct write integration into 28nm BEOL SRAM technology

    NASA Astrophysics Data System (ADS)

    Hohle, Christoph; Choi, Kang-Hoon; Gutsch, Manuela; Hanisch, Norbert; Seidel, Robert; Steidel, Katja; Thrun, Xaver; Werner, Thomas

    2015-03-01

    Electron beam direct write lithography (EBDW) potentially offers advantages for low-volume semiconductor manufacturing, rapid prototyping or design verification due to its high flexibility without the need of costly masks. However, the integration of this advanced patterning technology into complex CMOS manufacturing processes remains challenging. The low throughput of today's single e-Beam tools limits high volume manufacturing applications and maturity of parallel (multi) beam systems is still insufficient [1,2]. Additional concerns like transistor or material damage of underlying layers during exposure at high electron density or acceleration voltage have to be addressed for advanced technology nodes. In the past we successfully proved that potential degradation effects of high-k materials or ULK shrink can be neglected and were excluded by demonstrating integrated electrical results of 28nm node transistor and BEOL performance following 50kV electron beam dry exposure [3]. Here we will give an update on the integration of EBDW in the 300mm CMOS manufacturing processes of advanced integrated circuits at the 28nm SRAM node of GLOBALFOUNDRIES Dresden. The work is an update to what has been previously published [4]. E-beam patterning results of BEOL full chip metal and via layers with a dual damascene integration scheme using a 50kV VISTEC SB3050DW variable shaped electron beam direct writer at Fraunhofer IPMSCNT are demonstrated. For the patterning of the Metal layer a Mix & Match concept based on the sequence litho - etch -litho -etch (LELE) was developed and evaluated wherein several exposure fields were blanked out during the optical exposure. Etch results are shown and compared to the POR. Results are also shown on overlay performance and optimized e-Beam exposure time using most advanced data prep solutions and resist processes. The patterning results have been verified using fully integrated electrical measurement of metal lines and vias on wafer level. In

  20. Broad Wavelength Tunable Robust Lasing from Single-Crystal Nanowires of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, I).

    PubMed

    Fu, Yongping; Zhu, Haiming; Stoumpos, Constantinos C; Ding, Qi; Wang, Jue; Kanatzidis, Mercouri G; Zhu, Xiaoyang; Jin, Song

    2016-08-23

    Lead halide perovskite nanowires (NWs) are emerging as a class of inexpensive semiconductors with broad bandgap tunability for optoelectronics, such as tunable NW lasers. Despite exciting progress, the current organic-inorganic hybrid perovskite NW lasers suffer from limited tunable wavelength range and poor material stability. Herein, we report facile solution growth of single-crystal NWs of inorganic perovskite CsPbX3 (X = Br, Cl) and their alloys [CsPb(Br,Cl)3] and a low-temperature vapor-phase halide exchange method to convert CsPbBr3 NWs into perovskite phase CsPb(Br,I)3 alloys and metastable CsPbI3 with well-preserved perovskite crystal lattice and NW morphology. These single crystalline NWs with smooth end facets and subwavelength dimensions are ideal Fabry-Perot cavities for NW lasers. Optically pumped tunable lasing across the entire visible spectrum (420-710 nm) is demonstrated at room temperature from these NWs with low lasing thresholds and high-quality factors. Such highly efficient lasing similar to what can be achieved with organic-inorganic hybrid perovskites indicates that organic cation is not essential for light emission application from these lead halide perovskite materials. Furthermore, the CsPbBr3 NW lasers show stable lasing emission with no measurable degradation after at least 8 h or 7.2 × 10(9) laser shots under continuous illumination, which are substantially more robust than their organic-inorganic counterparts. The Cs-based perovskites offer a stable material platform for tunable NW lasers and other nanoscale optoelectronic devices.

  1. Three-dimensional Optical Coherence Tomography for Optical Biopsy of Lymph Nodes and Assessment of Metastatic Disease

    PubMed Central

    John, Renu; Adie, Steven G.; Chaney, Eric J.; Marjanovic, Marina; Tangella, Krishnarao V.; Boppart, Stephen A.

    2013-01-01

    Background Numerous techniques have been developed for localizing lymph nodes before surgical resection and for their histological assessment. Nondestructive high-resolution transcapsule optical imaging of lymph nodes offers the potential for in situ assessment of metastatic involvement, potentially during surgical procedures. Methods Three-dimensional optical coherence tomography (3-D OCT) was used for imaging and assessing resected popliteal lymph nodes from a preclinical rat metastatic tumor model over a 9-day time-course study after tumor induction. The spectral-domain OCT system utilized a center wavelength of 800 nm, provided axial and transverse resolutions of 3 and 12 µm, respectively, and performed imaging at 10,000 axial scans per second. Results OCT is capable of providing high-resolution labelfree images of intact lymph node microstructure based on intrinsic optical scattering properties with penetration depths of ~1–2 mm. The results demonstrate that OCT is capable of differentiating normal, reactive, and metastatic lymph nodes based on microstructural changes. The optical scattering and structural changes revealed by OCT from day 3 to day 9 after the injection of tumor cells into the lymphatic system correlate with inflammatory and immunological changes observed in the capsule, precortical regions, follicles, and germination centers found during histopathology. Conclusions We report for the first time a longitudinal study of 3-D transcapsule OCT imaging of intact lymph nodes demonstrating microstructural changes during metastatic infiltration. These results demonstrate the potential of OCT as a technique for intraoperative, real-time in situ 3-D optical biopsy of lymph nodes for the intraoperative staging of cancer. PMID:22688663

  2. Novel DPT methodology co-optimized with design rules for sub-20nm device

    NASA Astrophysics Data System (ADS)

    Lee, Hyun-Jong; Choi, Soo-Han; Yang, Jae-Seok; Chun, Kwan-Young; Do, Jeong-ho; Park, Chul-Hong

    2012-11-01

    Because extreme ultra violet (EUV) lithography is not ready due to technical challenges and low throughput, we are facing severe limitation for sub-20nm node patterning even though the extreme resolution enhancement technology (RET) such as the off-axis illumination and computational lithography have been used to achieve enough process window and critical dimension uniformity (CDU). As an alternative solution, double patterning technology (DPT) becomes the essential patterning scheme for the sub-20nm technology node. DPT requires the complex design rules because DPT rules need to consider layout decomposability into two masks. In order to improve CDU and to achieve both design rule simplicity and better designability, we propose two kinds of layout decomposition methodologies in this paper; 1) new mandrel decomposition of the Fin generation for better uniformity, 2) chip-level decomposition and colorless design rule of the contact to improve the scalability. Co-optimized design rules, decomposition method and process requirement enable us to obtain about 6% scaling benefits by comparison with normal DPT flow. These DPT approaches provide benefits for both process and design.

  3. Driving contact hole resolution to 45nm using novel process enhancement techniques

    NASA Astrophysics Data System (ADS)

    Montgomery, W.; Bennett, S.; Huli, L.; Weeks, John; Mackie, Angus

    2008-03-01

    Without question, one of the most difficult layers to print with a usable process window is the contact level. As the industry moves towards the 45nm node and beyond, the challenges associated with printing contact holes with a manufacturable process window have become increasingly difficult. The authors have taken a two-pronged approach that combines chemical and plasma etch methods in order to shrink contact holes and thus obtain higher resolution. Process windows were looked at using both methods individually, and then with both techniques combined. There are several resolution-enhancing chemical shrink materials on the market. In this discussion of contact resolution enhancement, the authors chose JSR CSX004. A relatively new etch approach, focused on reducing contact hole size, will be demonstrated. The etch process utilizes a SiARC ARC, which acts as a hardmask in order to create an enhanced contact hole. In this paper, the authors will describe an approach that will illustrate a methodology that can be used to produce 45nm node contact resolution in a manufacturing environment. Lithographic process windows, side-wall angles (via SEM cross section) and etch selectivity will be studied in detail.

  4. Sensitivity study and parameter optimization of OCD tool for 14nm finFET process

    NASA Astrophysics Data System (ADS)

    Zhang, Zhensheng; Chen, Huiping; Cheng, Shiqiu; Zhan, Yunkun; Huang, Kun; Shi, Yaoming; Xu, Yiping

    2016-03-01

    Optical critical dimension (OCD) measurement has been widely demonstrated as an essential metrology method for monitoring advanced IC process in the technology node of 90 nm and beyond. However, the rapidly shrunk critical dimensions of the semiconductor devices and the increasing complexity of the manufacturing process bring more challenges to OCD. The measurement precision of OCD technology highly relies on the optical hardware configuration, spectral types, and inherently interactions between the incidence of light and various materials with various topological structures, therefore sensitivity analysis and parameter optimization are very critical in the OCD applications. This paper presents a method for seeking the optimum sensitive measurement configuration to enhance the metrology precision and reduce the noise impact to the greatest extent. In this work, the sensitivity of different types of spectra with a series of hardware configurations of incidence angles and azimuth angles were investigated. The optimum hardware measurement configuration and spectrum parameter can be identified. The FinFET structures in the technology node of 14 nm were constructed to validate the algorithm. This method provides guidance to estimate the measurement precision before measuring actual device features and will be beneficial for OCD hardware configuration.

  5. Sentinel Lymph Node Biopsy: Quantification of Lymphedema Risk Reduction

    DTIC Science & Technology

    2006-10-01

    dosimetry to lymph node critical for arm drainage . (Months 1-36) a. Subject enrollment Thirty seven subjects have enrolled in the study. This is 13...lymphatic system compensates for extensive lymph node loss has remained obscure. Our results suggest that collateral drainage pathways involving...planning. Gamma camera-based lymphoscintigraphy images lymph vessels and nodes, and provides information about their drainage territories. However

  6. DNA charge transport over 34 nm

    NASA Astrophysics Data System (ADS)

    Slinker, Jason D.; Muren, Natalie B.; Renfrew, Sara E.; Barton, Jacqueline K.

    2011-03-01

    Molecular wires show promise in nanoscale electronics, but the synthesis of uniform, long conductive molecules is a significant challenge. Deoxyribonucleic acid (DNA) of precise length, by contrast, is synthesized easily, but its conductivity over the distances required for nanoscale devices has not been explored. Here we demonstrate DNA charge transport (CT) over 34 nm in 100-mer monolayers on gold. Multiplexed gold electrodes modified with 100-mer DNA yield sizable electrochemical signals from a distal, covalent Nile Blue redox probe. Significant signal attenuation upon incorporation of a single base-pair mismatch demonstrates that CT is DNA-mediated. Efficient cleavage of these 100-mers by a restriction enzyme indicates that the DNA adopts a native conformation accessible to protein binding. Similar electron-transfer rates measured through 100-mer and 17-mer monolayers are consistent with rate-limiting electron tunnelling through the saturated carbon linker. This DNA-mediated CT distance of 34 nm surpasses that of most reports of molecular wires.

  7. Low-intensity LED (625 and 405 nm) and laser (805 nm) killing of Propionibacterium acnes and Staphylococcus epidermidis

    NASA Astrophysics Data System (ADS)

    Tuchina, Elena S.; Tuchin, Valery V.

    2009-02-01

    In the present work we have investigated in vitro sensitivity of microorganisms P. acnes and S. epidermidis to action of red (625 nm and 405 nm) and infrared (805 nm) radiations in combination with photosensitizes Methylene Blue and Indocyanine Green.

  8. Detection of Lymph Node Metastases with SERRS Nanoparticles

    PubMed Central

    Spaliviero, Massimiliano; Harmsen, Stefan; Huang, Ruimin; Wall, Matthew A.; Andreou, Chrysafis; Eastham, James A.; Touijer, Karim A.; Scardino, Peter T.; Kircher, Moritz F.

    2016-01-01

    Purpose The accurate detection of lymph node metastases in prostate cancer patients is important to direct treatment decisions. Our goal was to develop an intra-operative imaging approach to distinguish normal from metastasized lymph nodes. We therefore developed and tested gold-silica surface-enhanced resonance Raman spectroscopy (SERRS) nanoparticles that demonstrate high uptake within normal lymphatic tissue, and negligible uptake in areas of metastatic replacement. Procedures We evaluated the ability of SERRS nanoparticles to delineate lymph node metastases in an orthotopic prostate cancer mouse model using PC-3 cells transduced with mCherry fluorescent protein. Tumor bearing mice (n = 6) and non-tumor bearing control animals (n = 4) were injected intravenously with 30 fmol/g SERRS nanoparticles. After 16–18 hours, the retroperitoneal lymph nodes were scanned in situ and ex vivo with a Raman imaging system and a hand-held Raman scanner and data corroborated with fluorescence imaging for mCherry protein expression and histology. Results The SERRS nanoparticles demonstrated avid homing to normal lymph nodes, but not to metastasized lymph nodes. In cases where lymph nodes were partially infiltrated by tumor cells, the SERRS signal correctly identified, with sub-millimeter precision, healthy from metastasized components within the same lymph node. Conclusions This study serves as a first proof-of-principle that SERRS nanoparticles enable high precision and rapid intraoperative discrimination between normal and metastasized lymph nodes. PMID:26943129

  9. Implementation of bipartite or remote unitary gates with repeater nodes

    NASA Astrophysics Data System (ADS)

    Yu, Li; Nemoto, Kae

    2016-08-01

    We propose some protocols to implement various classes of bipartite unitary operations on two remote parties with the help of repeater nodes in-between. We also present a protocol to implement a single-qubit unitary with parameters determined by a remote party with the help of up to three repeater nodes. It is assumed that the neighboring nodes are connected by noisy photonic channels, and the local gates can be performed quite accurately, while the decoherence of memories is significant. A unitary is often a part of a larger computation or communication task in a quantum network, and to reduce the amount of decoherence in other systems of the network, we focus on the goal of saving the total time for implementing a unitary including the time for entanglement preparation. We review some previously studied protocols that implement bipartite unitaries using local operations and classical communication and prior shared entanglement, and apply them to the situation with repeater nodes without prior entanglement. We find that the protocols using piecewise entanglement between neighboring nodes often require less total time compared to preparing entanglement between the two end nodes first and then performing the previously known protocols. For a generic bipartite unitary, as the number of repeater nodes increases, the total time could approach the time cost for direct signal transfer from one end node to the other. We also prove some lower bounds of the total time when there are a small number of repeater nodes. The application to position-based cryptography is discussed.

  10. Node-based measures of connectivity in genetic networks.

    PubMed

    Koen, Erin L; Bowman, Jeff; Wilson, Paul J

    2016-01-01

    At-site environmental conditions can have strong influences on genetic connectivity, and in particular on the immigration and settlement phases of dispersal. However, at-site processes are rarely explored in landscape genetic analyses. Networks can facilitate the study of at-site processes, where network nodes are used to model site-level effects. We used simulated genetic networks to compare and contrast the performance of 7 node-based (as opposed to edge-based) genetic connectivity metrics. We simulated increasing node connectivity by varying migration in two ways: we increased the number of migrants moving between a focal node and a set number of recipient nodes, and we increased the number of recipient nodes receiving a set number of migrants. We found that two metrics in particular, the average edge weight and the average inverse edge weight, varied linearly with simulated connectivity. Conversely, node degree was not a good measure of connectivity. We demonstrated the use of average inverse edge weight to describe the influence of at-site habitat characteristics on genetic connectivity of 653 American martens (Martes americana) in Ontario, Canada. We found that highly connected nodes had high habitat quality for marten (deep snow and high proportions of coniferous and mature forest) and were farther from the range edge. We recommend the use of node-based genetic connectivity metrics, in particular, average edge weight or average inverse edge weight, to model the influences of at-site habitat conditions on the immigration and settlement phases of dispersal.

  11. SpicyNodes: radial layout authoring for the general public.

    PubMed

    Douma, Michael; Ligierko, Grzegorz; Ancuta, Ovidiu; Gritsai, Pavel; Liu, Sean

    2009-01-01

    Trees and graphs are relevant to many online tasks such as visualizing social networks, product catalogs, educational portals, digital libraries, the semantic web, concept maps and personalized information management. SpicyNodes is an information-visualization technology that builds upon existing research on radial tree layouts and graph structures. Users can browse a tree, clicking from node to node, as well as successively viewing a node, immediately related nodes and the path back to the "home" nodes. SpicyNodes' layout algorithms maintain balanced layouts using a hybrid mixture of a geometric layout (a succession of spanning radial trees) and force-directed layouts to minimize overlapping nodes, plus several other improvements over prior art. It provides XML-based API and GUI authoring tools. The goal of the SpicyNodes project is to implement familiar principles of radial maps and focus+context with an attractive and inviting look and feel in an open system that is accessible to virtually any Internet user.

  12. Enhanced thermoelectric properties of Co1- x- y Ni x+ y Sb3- x Sn x materials

    NASA Astrophysics Data System (ADS)

    Liu, Hong-Quan; Zhang, Sheng-Nan; Zhu, Tie-Jun; Zhao, Xin-Bing; Gu, Yi-Jie; Cui, Hong-Zhi

    2012-03-01

    Co1- x- y Nix+ y Sb3- x Sn x polycrystals were fabricated by vacuum melting combined with hot-press sintering. The effect of alloying on the thermoelectric properties of unfilled skutterudite Co1- x Ni x Sb3- x Sn x was investigated. A leap of electrical conductivity from the Co0.93Ni0.07Sb2.93Sn0.07 sample to the Co0.88Ni0.12Sb2.88Sn0.12 sample occurs during the measurement of electrical conductivity, indicating the adjustment of band structure by proper alloying. The results show that alloying enhances the power factor of the materials. On the basis of alloying, the thermoelectric properties of Co0.88Ni0.12Sb2.88Sn0.12 are improved by Ni-doping. The thermal conductivities of Ni-doping samples have no reduction, but their power factors have obvious enhancement. The power factor of Co0.81Ni0.19Sb2.88Sn0.12 reaches 3.0 mW·m-1·K-2 by Ni doping. The dimensionless thermoelectric figure of merit reaches 0.55 at 773 K for the unfilled Co0.81Ni0.19 Sb2.88Sn0.12.

  13. Modulated CH3NH3PbI3-xBrx film for efficient perovskite solar cells exceeding 18.

    PubMed

    Tu, Yongguang; Wu, Jihuai; Lan, Zhang; He, Xin; Dong, Jia; Jia, Jinbiao; Guo, Panfeng; Lin, Jianming; Huang, Miaoliang; Huang, Yunfang

    2017-03-17

    The organic-inorganic lead halide perovskite layer is a crucial factor for the high performance perovskite solar cell (PSC). We introduce CH3NH3Br in the precursor solution to prepare CH3NH3PbI3-xBrx hybrid perovskite, and an uniform perovskite layer with improved crystallinity and apparent grain contour is obtained, resulting in the significant improvement of photovoltaic performance of PSCs. The effects of CH3NH3Br on the perovskite morphology, crystallinity, absorption property, charge carrier dynamics and device characteristics are discussed, and the improvement of open circuit voltage of the device depended on Br doping is confirmed. Based on above, the device based on CH3NH3PbI2.86Br0.14 exhibits a champion power conversion efficiency (PCE) of 18.02%. This study represents an efficient method for high-performance perovskite solar cell by modulating CH3NH3PbI3-xBrx film.

  14. Positron Annihilation Study of Ternary Sb2Te3-x Se x for Its Tuning Electrical and Thermal Properties

    NASA Astrophysics Data System (ADS)

    Zheng, Wenwen; Yang, Dongwang; Bi, Peng; He, Chunqing; Liu, Fengming; Shi, Jing; Ding, Yi; Wang, Ziyu; Xiong, Rui

    2016-10-01

    Atomic scale point defects play important roles in tuning the carrier concentration and ultimately influencing electrical and thermal properties. Herein, we fabricated the ternary Sb2Te3-x Se x alloys to study the intimate relationship of internal point defects and thermoelectric performance. The Se substitution of Te atoms in the Sb2Te3 lattice decreased the electrical conductivity from 2.2 × 105 S/m to 6.4 × 104 S/m owing to the reduced holes concentration. The declined point defects, including antisite defects and vacancies in materials, gave rise to the decrease in carrier concentration. The Seebeck coefficient of the ternary Sb2Te3-x Se x exhibited an increase with doping of Se atoms. Simultaneously, the thermal conductivity behaved a fallihg trend as well as increasing Se content. As a result, the ZT value reached the maximum from the corresponding Sb2Te2.9Se0.1 pellet. Positron annihilation measurement revealed that the average positron lifetime showed a monotonic decrease with Se addition, demonstrating the reduced point defects, which was in agreement with the thermoelectric performance.

  15. Fe3-xCuxO4 as highly active heterogeneous Fenton-like catalysts toward elemental mercury removal.

    PubMed

    Zhou, Changsong; Sun, Lushi; Zhang, Anchao; Wu, Xiaofeng; Ma, Chuan; Su, Sheng; Hu, Song; Xiang, Jun

    2015-04-01

    A series of novel spinel Fe3-xCuxO4 (0