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Sample records for 3x nm node

  1. AIMS mask qualification for 32nm node

    NASA Astrophysics Data System (ADS)

    Richter, Rigo; Thaler, Thomas; Seitz, Holger; Stroessner, Ulrich; Scheruebl, Thomas

    2009-10-01

    Moving forward to 32nm node and below optical lithography using 193nm is faced with complex requirements to be solved. Mask makers are forced to address both Double Patterning Techniques and Computational Lithography approaches such as Source Mask Optimizations and Inverse Lithography. Additionally, lithography at low k1 values increases the challenges for mask repair as well as for repair verification and review by AIMSTM. Higher CD repeatability, more flexibility in the illumination settings as well as significantly improved image performance must be added when developing the next generation mask qualification equipment. This paper reports latest measurement results verifying the appropriateness of the latest member of AIMSTM measurement tools - the AIMSTM 32-193i. We analyze CD repeatability measurements on lines and spaces pattern. The influence of the improved optical performance and newly introduced interferometer stage will be verified. This paper highlights both the new Double Patterning functionality emulating double patterning processes and the influence of its critical parameters such as overlay errors and resist impact. Beneficial advanced illumination schemes emulating scanner illumination document the AIMSTM 32-193i to meet mask maker community's requirements for the 32nm node.

  2. 100-nm node lithography with KrF?

    NASA Astrophysics Data System (ADS)

    Fritze, Michael; Tyrrell, Brian; Astolfi, David K.; Yost, Donna; Davis, Paul; Wheeler, Bruce; Mallen, Renee D.; Jarmolowicz, J.; Cann, Susan G.; Liu, Hua-Yu; Ma, M.; Chan, David Y.; Rhyins, Peter D.; Carney, Chris; Ferri, John E.; Blachowicz, B. A.

    2001-09-01

    We present results looking into the feasibility of 100-nm Node imaging using KrF, 248-nm, exposure technology. This possibility is not currently envisioned by the 1999 ITRS Roadmap which lists 5 possible options for this 2005 Node, not including KrF. We show that double-exposure strong phase- shift, combined with two mask OPC, is capable of correcting the significant proximity effects present for 100-nm Node imaging at these low k1 factors. We also introduce a new PSM Paradigm, dubbed 'GRATEFUL,' that can image aggressive 100-nm Node features without using OPC. This is achieved by utilizing an optimized 'dense-only' imaging approach. The method also allows the re-use of a single PSM for multiple levels and designs, thus addressing the mask cost and turnaround time issues of concern in PSM technology.

  3. Electron beam inspection of 16nm HP node EUV masks

    NASA Astrophysics Data System (ADS)

    Shimomura, Takeya; Narukawa, Shogo; Abe, Tsukasa; Takikawa, Tadahiko; Hayashi, Naoya; Wang, Fei; Ma, Long; Lin, Chia-Wen; Zhao, Yan; Kuan, Chiyan; Jau, Jack

    2012-11-01

    EUV lithography (EUVL) is the most promising solution for 16nm HP node semiconductor device manufacturing and beyond. The fabrication of defect free EUV mask is one of the most challenging roadblocks to insert EUVL into high volume manufacturing (HVM). To fabricate and assure the defect free EUV masks, electron beam inspection (EBI) tool will be likely the necessary tool since optical mask inspection systems using 193nm and 199nm light are reaching a practical resolution limit around 16nm HP node EUV mask. For production use of EBI, several challenges and potential issues are expected. Firstly, required defect detection sensitivity is quite high. According to ITRS roadmap updated in 2011, the smallest defect size needed to detect is about 18nm for 15nm NAND Flash HP node EUV mask. Secondly, small pixel size is likely required to obtain the high sensitivity. Thus, it might damage Ru capped Mo/Si multilayer due to accumulated high density electron beam bombardments. It also has potential of elevation of nuisance defects and reduction of throughput. These challenges must be solved before inserting EBI system into EUV mask HVM line. In this paper, we share our initial inspection results for 16nm HP node EUV mask (64nm HP absorber pattern on the EUV mask) using an EBI system eXplore® 5400 developed by Hermes Microvision, Inc. (HMI). In particularly, defect detection sensitivity, inspectability and damage to EUV mask were assessed. As conclusions, we found that the EBI system has capability to capture 16nm defects on 64nm absorber pattern EUV mask, satisfying the sensitivity requirement of 15nm NAND Flash HP node EUV mask. Furthermore, we confirmed there is no significant damage to susceptible Ru capped Mo/Si multilayer. We also identified that low throughput and high nuisance defect rate are critical challenges needed to address for the 16nm HP node EUV mask inspection. The high nuisance defect rate could be generated by poor LWR and stitching errors during EB writing

  4. 28nm node process optimization: a lithography centric view

    NASA Astrophysics Data System (ADS)

    Seltmann, Rolf

    2014-10-01

    Many experts claim that the 28nm technology node will be the most cost effective technology node forever. This results from primarily from the cost of manufacturing due to the fact that 28nm is the last true Single Patterning (SP) node. It is also affected by the dramatic increase of design costs and the limited shrink factor of the next following nodes. Thus, it is assumed that this technology still will be alive still for many years. To be cost competitive, high yields are mandatory. Meanwhile, leading edge foundries have optimized the yield of the 28nm node to such a level that that it is nearly exclusively defined by random defectivity. However, it was a long way to go to come to that level. In my talk I will concentrate on the contribution of lithography to this yield learning curve. I will choose a critical metal patterning application. I will show what was needed to optimize the process window to a level beyond the usual OPC model work that was common on previous nodes. Reducing the process (in particular focus) variability is a complementary need. It will be shown which improvements were needed in tooling, process control and design-mask-wafer interaction to remove all systematic yield detractors. Over the last couple of years new scanner platforms were introduced that were targeted for both better productivity and better parametric performance. But this was not a clear run-path. It needed some extra affords of the tool suppliers together with the Fab to bring the tool variability down to the necessary level. Another important topic to reduce variability is the interaction of wafer none-planarity and lithography optimization. Having an accurate knowledge of within die topography is essential for optimum patterning. By completing both the variability reduction work and the process window enhancement work we were able to transfer the original marginal process budget to a robust positive budget and thus ensuring high yield and low costs.

  5. Considerations for fine hole patterning for the 7nm node

    NASA Astrophysics Data System (ADS)

    Yaegashi, Hidetami; Oyama, Kenichi; Hara, Arisa; Natori, Sakurako; Yamauchi, Shohei; Yamato, Masatoshi; Koike, Kyohei

    2016-03-01

    One of the practical candidates to produce 7nm node logic devices is to use the multiple patterning with 193-immersion exposure. For the multiple patterning, it is important to evaluate the relation between the number of mask layer and the minimum pitch systematically to judge the device manufacturability. Although the number of the time of patterning, namely LE(Litho-Etch) ^ x-time, and overlay steps have to be reduced, there are some challenges in miniaturization of hole size below 20nm. Various process fluctuations on contact hole have a direct impact on device performance. According to the technical trend, 12nm diameter hole on 30nm-pitch hole will be needed on 7nm node. Extreme ultraviolet lithography (EUV) and Directed self-assembly (DSA) are attracting considerable attention to obtain small feature size pattern, however, 193-immersion still has the potential to extend optical lithography cost-effectively for sub-7nm node. The objective of this work is to study the process variation challenges and resolution in post-processing for the CD-bias control to meet sub-20nm diameter contact hole. Another pattern modulation is also demonstrated during post-processing step for hole shrink. With the realization that pattern fidelity and pattern placement management will limit scaling long before devices and interconnects fail to perform intrinsically, the talk will also outline how circle edge roughness (CER) and Local-CD uniformity can correct efficiency. On the other hand, 1D Gridded-Design-Rules layout (1D layout) has simple rectangular shapes. Also, we have demonstrated CD-bias modification on short trench pattern to cut grating line for its fabrication.

  6. Design and manufacturability tradeoffs in unidirectional and bidirectional standard cell layouts in 14 nm node

    NASA Astrophysics Data System (ADS)

    Vaidyanathan, Kaushik; Ng, Siew Hoon; Morris, Daniel; Lafferty, Neal; Liebmann, Lars; Bender, Mitchell; Huang, Wenbin; Lai, Kafai; Pileggi, Larry; Strojwas, Andrzej

    2012-03-01

    The 14 nm node is seeing the dominant use of three-dimensional FinFET architectures, local interconnects, multiple patterning processes and restricted design rules. With the adoption of these new process technologies and design styles, it becomes necessary to rethink the standard cell library design methodologies that proved successful in the past. In this paper, we compare the design efficiency and manufacturability of standard cell libraries that use either unidirectional or bidirectional Metal 1. In contrast to previous nodes, a 14 nm 9-track unidirectional standard cell layout results in up to 20% lower energy-delay-area product as compared to the 9-track bidirectional standard cell layout. Manufacturability assessment shows that the unidirectional standard cell layouts save one exposure on Metal 1, reduces process variability by 10% and layout construct count by 2-3X. As a result, the unidirectional standard cell layout could serve as a key enabler for affordable scaling.

  7. Quality metric for accurate overlay control in <20nm nodes

    NASA Astrophysics Data System (ADS)

    Klein, Dana; Amit, Eran; Cohen, Guy; Amir, Nuriel; Har-Zvi, Michael; Huang, Chin-Chou Kevin; Karur-Shanmugam, Ramkumar; Pierson, Bill; Kato, Cindy; Kurita, Hiroyuki

    2013-04-01

    The semiconductor industry is moving toward 20nm nodes and below. As the Overlay (OVL) budget is getting tighter at these advanced nodes, the importance in the accuracy in each nanometer of OVL error is critical. When process owners select OVL targets and methods for their process, they must do it wisely; otherwise the reported OVL could be inaccurate, resulting in yield loss. The same problem can occur when the target sampling map is chosen incorrectly, consisting of asymmetric targets that will cause biased correctable terms and a corrupted wafer. Total measurement uncertainty (TMU) is the main parameter that process owners use when choosing an OVL target per layer. Going towards the 20nm nodes and below, TMU will not be enough for accurate OVL control. KLA-Tencor has introduced a quality score named `Qmerit' for its imaging based OVL (IBO) targets, which is obtained on the-fly for each OVL measurement point in X & Y. This Qmerit score will enable the process owners to select compatible targets which provide accurate OVL values for their process and thereby improve their yield. Together with K-T Analyzer's ability to detect the symmetric targets across the wafer and within the field, the Archer tools will continue to provide an independent, reliable measurement of OVL error into the next advanced nodes, enabling fabs to manufacture devices that meet their tight OVL error budgets.

  8. Full phase-shifting methodology for 65-nm node lithography

    NASA Astrophysics Data System (ADS)

    Pierrat, Christophe; Driessen, Frank A. J. M.; Vandenberghe, Geert

    2003-06-01

    A new methodology for completely phase-shifting a poly layout without creating local phase conflicts was proposed for lithographic techniques combining one phase-shifting mask and one binary mask exposure1. Critical and non-critical areas of the layout are identified and phase conflicts are avoided by splitting the shifter regions from non-critical areas to non-critical areas without crossing critical areas. The out-of-phase splits of the shifter regions are removed using the binary exposure. Simulation results and experimental data collected for 90nm technology node show no sign of process latitude loss around the areas where the shifters are split. The overlay latitude is commensurate with 90nm technology scanner requirements (tool to itself). Simulation work shows that the two exposures are balancing each other out of focus in the 45-degree cut regions thus ensuring large focus latitude. The focus latitude reported is larger than the main feature process latitude; this result was confirmed experimentally. A set of phase-shifting design rules commensurate with an aggressive 65nm node technology (140nm pitch) was put together. Under these conditions, we have identified certain types of cuts that should be avoided during the generation of the phase-shifting layout; this is primarily the case for cuts in "elbow" structures which exhibit limited process latitude. Other cuts like line-end cuts will have to be modified. In this case we have proposed a side cut when the line-end is facing a perpendicular line with a minimum spacing. Despite these restrictions, test structures for the 65nm technology node were successfully converted with no phase conflicts. Experimental verification done on test structures using a 0.75 NA, 193nm scanner demonstrates 0.33 k1 capability using the full phase methodology.

  9. Taking the X Architecture to the 65-nm technology node

    NASA Astrophysics Data System (ADS)

    Sarma, Robin C.; Smayling, Michael C.; Arora, Narain; Nagata, Toshiyuki; Duane, Michael P.; Shah, Santosh; Keston, Harris J.; Oemardani, Shiany

    2004-05-01

    The X Architecture is a new way of orienting the interconnect on an integrated circuit using diagonal pathways, as well as the traditional right-angle, or Manhattan, configuration. By enabling designs with significantly less wire and fewer vias, the X Architecture can provide substantial improvements in chip performance, power consumption and cost. Members of the X Initiative semiconductor supply chain consortium have demonstrated the production worthiness of the X Architecture at the 130-nm and 90-nm process technology nodes. This paper presents an assessment of the manufacturing readiness of the X Architecture for the 65-nm technology node. The extent to which current production capabilities in mask writing, lithography, wafer processing, inspection and metrology can be used is discussed using the results from a 65-nm test chip. The project was a collaborative effort amongst a number of companies in the IC fabrication supply chain. Applied Materials fabricated the 65-nm X Architecture test chip at its Maydan Technology Center and leveraged the technology of other X Initiative members. Cadence Design Systems provided the test structure design and chip validation tools, Dai Nippon Printing produced the masks and Canon"s imaging system was employed for the photolithography.

  10. Double exposure technique for 45nm node and beyond

    NASA Astrophysics Data System (ADS)

    Hsu, Stephen; Park, Jungchul; Van Den Broeke, Douglas; Chen, J. Fung

    2005-11-01

    The technical challenges in using F2 lithography for the 45nm node, along with the insurmountable difficulties in EUV lithography, has driven the semiconductor chipmaker into the low k1 lithography era under the pressure of ever decreasing feature sizes. Extending lithography towards lower k1 puts heavy demand on the resolution enhancement technique (RET), exposure tool, and the need for litho friendly design. Hyper numerical aperture (NA) exposure tools, immersion, and double exposure techniques (DET's) are the promising methods to extend lithography manufacturing to the 45nm node at k1 factors below 0.3. Scattering bars (SB's) have become an integral part of the lithography process as chipmakers move to production at ever lower k1 factors. To achieve better critical dimension (CD) control, polarization is applied to enhance the image contrast in the preferential imaging orientation, which increases the risk of SB printability. The optimum SB width is approximately (0.20 ~ 0.25)*(λ/NA). When the SB width becomes less than the exposure wavelength on the 4X mask, Kirchhoff's scalar theory under predicts the SB intensity. The optical weighting factor of the SB increases (Figure 1b) and the SB's become more susceptible to printing. Meanwhile, under hyper NA conditions, the effectiveness of "subresolution" SB's is significantly diminished. A full-sized scattering bars (FSB) scheme becomes necessary. Double exposure methods, such as using ternary 6% attenuated PSM (attPSM) for DDL, are good imaging solutions that can reach and likely go beyond the 45nm node. Today DDL, using binary chrome masks, is capable of printing 65 nm device patterns. In this work, we investigate the use of DET with 6% attPSM masks to target 45nm node device. The SB scalability and printability issues can be taken cared of by using "mutual trimming", i.e., with the combined energy from the two exposures. In this study, we share our findings of using DET to pattern a 45nm node device design with

  11. Novel high sensitivity EUV photoresist for sub-7nm node

    NASA Astrophysics Data System (ADS)

    Nagai, Tomoki; Nakagawa, Hisashi; Naruoka, Takehiko; Tagawa, Seiichi; Oshima, Akihiro; Nagahara, Seiji; Shiraishi, Gosuke; Yoshihara, Kosuke; Terashita, Yuichi; Minekawa, Yukie; Buitrago, Elizabeth; Ekinci, Yasin; Yildirim, Oktay; Meeuwissen, Marieke; Hoefnagels, Rik; Rispens, Gijsbert; Verspaget, Coen; Maas, Raymond

    2016-03-01

    Extreme ultraviolet lithography (EUVL) has been recognized as the most promising candidate for the manufacture of semiconductor devices for the 7 nm node and beyond. A key point in the successful introduction of EUV lithography in high volume manufacture (HVM) is the effective EUV dose utilization while simultaneously realizing ultra-high resolution and low line edge roughness (LER). Here we show EUV resist sensitivity improvement with the use of a photosensitized chemically amplified resist PSCARTM system. The evaluation of this new chemically amplified resist (CAR) as performed using EUV interference lithography (EUV-IL) is described and the fundamentals are discussed.

  12. Scatterometry for EUV lithography at the 22-nm node

    NASA Astrophysics Data System (ADS)

    Bunday, Benjamin; Vartanian, Victor; Ren, Liping; Huang, George; Montgomery, Cecilia; Montgomery, Warren; Elia, Alex; Liu, Xiaoping

    2011-03-01

    Moore's Law continues to drive improvements to lithographic resolution to increase integrated circuit transistor density, improve performance, and reduce cost. For the 22 nm node and beyond, extreme ultraviolet lithography (EUVL) is a promising technology with λ=13.5 nm, a larger k1 value and lower cost of ownership than other available technologies. For small feature sizes, process control will be increasingly challenging, as small features will create measurement uncertainties, yet with tighter specifications. Optical scatterometry is a primary candidate metrology for EUV lithography process control. Using simulation and experimental data, this work will explore scatterometry's application to a typical lithography process being used for EUV development, which should be representative of lithography processes that will be utilized for EUV High Volume manufacturing (HVM). EUV lithography will be performed using much thinner photoresist thicknesses than were used at the 248nm or 193nm lithography generations, and will probably include underlayers for adhesion improvement; these new processes conditions were investigated in this metrological study.

  13. Megasonic cleaning: possible solutions for 22nm node and beyond

    NASA Astrophysics Data System (ADS)

    Shende, Hrishi; Singh, Sherjang; Baugh, James; Mann, Raunak; Dietze, Uwe; Dress, Peter

    2011-11-01

    Megasonic energy transfer to the photomask surface is indirectly controlled by process parameters that provide an effective handle to physical force distribution on the photomask surface. A better understanding of the influence of these parameters on the physical force distribution and their effect on pattern damage of fragile mask features can help optimize megasonic energy transfer as well as assist in extending this cleaning technology beyond the 22nm node. In this paper we have specifically studied the effect of higher megasonic frequencies (3 & 4MHz) and media gasification on pattern damage; the effect of cleaning chemistry, media volume flow rate, process time, and nozzle distance to the mask surface during the dispense is also discussed. Megasonic energy characterization is performed by measuring the acoustic energy as well as cavitation created by megasonic energy through sonoluminescence measurements.

  14. Low-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes

    NASA Astrophysics Data System (ADS)

    Nogami, T.; Lane, S.; Fukasawa, M.; Ida, K.; Angyal, M.; Chanda, K.; Chen, F.; Christiansen, C.; Cohen, S.; Cullinan, M.; Dziobkowski, C.; Fitzsimmons, J.; Flaitz, P.; Grill, A.; Gill, J.; Inoue, K.; Klymko, N.; Kumar, K.; Labelle, C.; Lane, M.; Li, B.; Liniger, E.; Madon, A.; Malone, K.; Martin, J.; McGahay, V.; McLaughlin, P.; Melville, I.; Minami, M.; Molis, S.; Nguyen, S.; Penny, C.; Restaino, D.; Sakamoto, A.; Sankar, M.; Sherwood, M.; Simonyi, E.; Shimooka, Y.; Tai, L.; Widodo, J.; Wildman, H.; Ono, M.; McHerron, D.; Nye, H.; Davis, C.; Sankaran, S.; Edelstein, D.; Ivers, T.

    2005-11-01

    This paper discusses low-k/copper integration schemes which has been in production in the 90 nm node, have been developed in the 65 nm node, and should be taken in the 45 nm node. While our baseline 65 nm BEOL process has been developed by extension and simple shrinkage of our PECVD SiCOH integration which has been in production in the 90 nm node with our SiCOH film having k=3.0, the 65 nm SiCOH integration has two other options to go to extend to lower capacitance. One is to add porosity to become ultra low-k (ULK). The other is to stay with low-k SiCOH, which is modified to have a "lower-k". The effective k- value attained with the lower-k (k=2.8) SiCOH processed in the "Direct CMP" scheme is very close to that with an ULK (k=2.5) SiCOH film built with the "Hard Mask Retention" scheme. This paper first describes consideration of these two damascene schemes, whose comparison leads to the conclusion that the lower-k SiCOH integration can have more advantages in terms of process simplicity and extendibility of our 90 nm scheme under certain assumptions. Then describing the k=2.8 SiCOH film development and its successful integration, damascene schemes for 45nm nodes are discussed based on our learning from development of the lower-k 65nm scheme. Capability of modern dry etchers to define the finer patterns, non-uniformity of CMP, and susceptibility to plasma and mechanical strength and adhesion of ULK are discussed as factors to hamper the applicability of ULK.

  15. Developing an integrated imaging system for the 70-nm node using high numerical aperture ArF lithography

    NASA Astrophysics Data System (ADS)

    Petersen, John S.; Beach, James V.; Gerold, David J.; Maslow, Mark J.

    2002-07-01

    At its conception, 193 nm lithography was thought to be the best way to take optical lithography to the 180 nm node. It was expected that 193 nm could support the now-defunct 160 nm node before optical lithography would have to yield to an undetermined non-optical solution. Today, 193 nm must compete with 248 nm for the 130 nm node and is expected to support lithography until it is replaced by 157 nm at the 70 nm node. Given the challenges facing 157 nm, it is likely that lithographers will attempt to extend the utility of 193 nm to its theoretical limits.

  16. Model-based scattering bars implementation for 65nm and 45nm nodes using IML technology

    NASA Astrophysics Data System (ADS)

    Hsu, Michael; Van Den Broeke, Doug; Laidig, Tom; Wampler, Kurt E.; Hollerbach, Uwe; Socha, Robert; Chen, J. F.; Hsu, Stephen; Shi, Xuelong

    2005-06-01

    Scattering Bars (SB) OPC, together with optimized illumination, is no doubt one of the critical enablers for low k1 lithography manufacturing. The manufacturing implementation of SB so far has been mainly based on rule-based approach. While this has been working well, a more effective model-based approach is much more desired lithographically for manufacturing at 65nm and 45nm nodes. This is necessary to ensure sufficient process margin using hyper NA for patterning random IC design. In our model-based SB (M-SB) OPC implementation, we have based on the patented IML Technology from ASML MaskTools. In this report, we use both dark field contact hole and clear field poly gate mask to demonstrate this implementation methodology. It is also quite applicable for dark field trench masks, such as local interconnect mask with damascene metal. For our full-chip implementation flow, the first step is to determine the critical design area and then to proceed with NA and illumination optimization. We show that, using LithoCruiser, we are able to select the best NA in combination with optimum illumination via a Diffraction Optical Element (DOE). The decision to use a custom DOE or one from the available DOE library from ASML can be made based on predicted process performance and cost effectiveness. With optimized illumination, it is now possible to construct an interference map for the full-chip mask pattern. Utilizing the interference map, M-SB OPC is generated. Next, model OPC can be applied with the presence of M-SB for the entire chip. It is important to note here, that from our experience, the model OPC must be calibrated with the presence of SB in order to achieve the desired accuracy. We report the full-chip processing benchmark using MaskWeaver to apply both M-SB and model OPC. For actual patterning performance, we have verified the full chip OPC treatment using SLiC, a DFM tool from Cadence. This implementation methodology can be applied to binary chrome mask

  17. Extension of 193 nm dry lithography to 45-nm half-pitch node: double exposure and double processing technique

    NASA Astrophysics Data System (ADS)

    Biswas, Abani M.; Li, Jianliang; Hiserote, Jay A.; Melvin, Lawrence S., III

    2006-10-01

    Immersion lithography and multiple exposure techniques are the most promising methods to extend lithography manufacturing to the 45nm node. Although immersion lithography has attracted much attention recently as a promising optical lithography extension, it will not solve all the problems at the 45-nm node. The 'dry' option, (i.e. double exposure/etch) which can be realized with standard processing practice, will extend 193-nm lithography to the end of the current industry roadmap. Double exposure/etch lithography is expensive in terms of cost, throughput time, and overlay registration accuracy. However, it is less challenging compared to other possible alternatives and has the ability to break through the κ I barrier (0.25). This process, in combination with attenuated PSM (att-PSM) mask, is a good imaging solution that can reach, and most likely go beyond, the 45-nm node. Mask making requirements in a double exposure scheme will be reduced significantly. This can be appreciated by the fact that the separation of tightly-pitched mask into two less demanding pitch patterns will reduce the stringent specifications for each mask. In this study, modeling of double exposure lithography (DEL) with att-PSM masks to target 45-nm node is described. In addition, mask separation and implementation issues of optical proximity corrections (OPC) to improve process window are studied. To understand the impact of OPC on the process window, Fourier analysis of the masks has been carried out as well.

  18. Gaps analysis for CD metrology beyond the 22nm node

    NASA Astrophysics Data System (ADS)

    Bunday, Benjamin; Germer, Thomas A.; Vartanian, Victor; Cordes, Aaron; Cepler, Aron; Settens, Charles

    2013-04-01

    This paper will examine the future for critical dimension (CD) metrology. First, we will present the extensive list of applications for which CD metrology solutions are needed, showing commonalities and differences among the various applications. We will then report on the expected technical limits of the metrology solutions currently being investigated by SEMATECH and others in the industry to address the metrology challenges of future nodes, including conventional CD scanning electron microscopy (CD-SEM) and optical critical dimension (OCD) metrology and new potential solutions such as He-ion microscopy (HeIM, sometimes elsewhere referred to as HIM), CD atomic force microscopy (CD-AFM), CD small-angle x-ray scattering (CD-SAXS), high-voltage scanning electron microscopy (HV-SEM), and other types. A technical gap analysis matrix will then be demonstrated, showing the current state of understanding of the future of the CD metrology space.

  19. Imaging performance and challenges of 10nm and 7nm logic nodes with 0.33 NA EUV

    NASA Astrophysics Data System (ADS)

    van Setten, Eelco; Schiffelers, Guido; Psara, Eleni; Oorschot, Dorothe; Davydova, Natalia; Finders, Jo; Depre, Laurent; Farys, Vincent

    2014-10-01

    The NXE:3300B is ASML's third generation EUV system and has an NA of 0.33 and is positioned at a resolution of 22nm, which can be extended down to 18nm and below with off-axis illumination at full transmission. Multiple systems have been qualified and installed at customers. The NXE:3300B succeeds the NXE:3100 system (NA of 0.25), which has allowed customers to gain valuable EUV experience. It is expected that EUV will be adopted first for critical Logic layers at 10nm and 7nm nodes, such as Metal-1, to avoid the complexity of triple patterning schemes using ArF immersion. In this paper we will evaluate the imaging performance of (sub-)10nm node Logic M1 on the NXE:3300B EUV scanner. We will show the line-end performance of tip-to-tip and tip-to-space test features for various pitches and illumination settings and the performance enhancement obtained by means of a 1st round of OPC. We will also show the magnitude of local variations. The Logic M1 cell is evaluated at various critical features to identify hot spots. A 2nd round OPC model was calibrated of which we will show the model accuracy and ability to predict hot spots in the Logic M1 cell. The calibrated OPC model is used to predict the expected performance at 7nm node Logic using off-axis illumination at 16nm minimum half pitch. Initial results of L/S exposed on the NXE:3300B at 7nm node resolutions will be shown. An outlook is given to future 0.33 NA systems on the ASML roadmap with enhanced illuminator capabilities to further improve performance and process window.

  20. Radiation Performance of 1 Gbit DDR SDRAMs Fabricated in the 90 nm CMOS Technology Node

    NASA Technical Reports Server (NTRS)

    Ladbury, Raymond L.; Gorelick, Jerry L.; Berg, M. D.; Kim, H.; LaBel, K.; Friendlich, M.; Koga, R.; George, J.; Crain, S.; Yu, P.; Reed, R. A.

    2006-01-01

    We present Single Event Effect (SEE) and Total Ionizing Dose (TID) data for 1 Gbit DDR SDRAMs (90 nm CMOS technology) as well as comparing this data with earlier technology nodes from the same manufacturer.

  1. EBDW technology for EB shuttle at 65nm node and beyond

    NASA Astrophysics Data System (ADS)

    Maruyama, T.; Takakuwa, M.; Kojima, Y.; Takahashi, Y.; Yamada, K.; Kon, J.; Miyajima, M.; Shimizu, A.; Machida, Y.; Hoshino, H.; Takita, H.; Sugatani, S.; Tsuchikawa, H.

    2008-03-01

    When manufacturing prototype devices or low volume custom logic LSIs, the products are being less profitable because of the skyrocketing mask and design costs recent technology node. For 65nm technology node and beyond, the reduction of mask cost becomes critical issue for logic devices especially. We attempt to apply EBDW mainly to critical interconnect layers to reduce the mask expenditure for the reason of technical output reusability. For 65nm node production, new 300mm EB direct writer had been installed. The process technologies have also been developing to meet sufficient qualities and productivities.

  2. Advanced Write Tool Effects on 100-nm Node OPC

    NASA Astrophysics Data System (ADS)

    Buck, Peter D.; Green, Kent G.; Ibsen, Kent B.; Nakagawa, Kent H.; Hong, Dongsung; Krishnan, Prakash; Coburn, Dianna

    2002-12-01

    It has long been understood that there is an image fidelity difference between the integrated circuit design pattern and the photomask made from that pattern, largely due to the finite spot size of pattern generators. Furthermore, there are known differences in photomask image fidelity (rounding, jogs, etc.) between e-beam and laser pattern generators. Using a novel technique developed by DuPont Photomasks, Inc. (DPI), actual photomask fidelity has been simulated from design data to produce a more true-to-life representation of the mask. We have performed analytical simulations and printed-wafer measurements on Cypress 100-nm technology designs to determine the differences and effects on optical proximity correction (OPC) of two types of pattern generators: 50 keV e-beam and DUV laser. Both JEOL 9000MV-II+ and ETEC ALTA 4000 images were simulated and saved in GDSII format ("mask-GDSII"). These new mask images were processed through standard lithography simulation software to predict the effects each mask writer has on localized optical proximity effects. Simulations were compared to printed wafer results. A detailed comparison of the accuracy of the mask-GDSII and original design GDSII is performed. Furthermore, comparison of 50 keV e-beam and DUV laser image fidelity is completed, and recommendations are made on how to correct OPC models for each type of photomask generator. Lastly, conclusions are drawn about the use of DUV laser and 50 keV e-beam photomasks.

  3. Implementation of templated DSA for via layer patterning at the 7nm node

    NASA Astrophysics Data System (ADS)

    Gronheid, Roel; Doise, Jan; Bekaert, Joost; Chan, Boon Teik; Karageorgos, Ioannis; Ryckaert, Julien; Vandenberghe, Geert; Cao, Yi; Lin, Guanyang; Somervell, Mark; Fenger, Germain; Fuchimoto, Daisuke

    2015-03-01

    In recent years major advancements have been made in the directed self-assembly (DSA) of block copolymers (BCP). Insertion of DSA for IC fabrication is seriously considered for the 7nm node. At this node the DSA technology could alleviate costs for double patterning and limit the number of masks that would be required per layer. At imec multiple approaches for inserting DSA into the 7nm node are considered. One of the most straightforward approaches for implementation would be for via patterning through templated DSA (grapho-epitaxy), since hole patterns are readily accessible through templated hole patterning of cylindrical phase BCP materials. Here, the pre-pattern template is first patterned into a spin-on hardmask stack. After optimizing the surface properties of the template the desired hole patterns can be obtained by the BCP DSA process. For implementation of this approach to be implemented for 7nm node via patterning, not only the appropriate process flow needs to be available, but also appropriate metrology (including for pattern placement accuracy) and DSA-aware mask decomposition are required. In this paper the imec approach for 7nm node via patterning will be discussed.

  4. Viability of pattern shift for defect-free EUV photomasks at the 7nm node

    NASA Astrophysics Data System (ADS)

    Qi, Zhengqing John; Rankin, Jed; Narita, Eisuke; Kagawa, Masayuki

    2015-10-01

    Several challenges hinder EUV photomask fabrication and its readiness for high volume manufacturing (HVM). The lack in availability of pristine defect-free blanks as well as the absence of a robust mask repair technique mandates defect mitigation through pattern shift for the production of defect-free photomasks. By using known defect locations on a blank, the mask design can be intentionally shifted to avoid patterning directly over a defect. The work presented here provides a comprehensive look at pattern shift implementation to intersect EUV HVM for the 7 nm technology node. An empirical error budget to compensate for various measurement errors, based on the latest HVM inspection and write tool capabilities, is first established and then verified post-patterning. The validated error budget is applied to 20 representative EUV blanks and pattern shift is performed using OPC'd 7 nm node fully functional chip designs that were also recently used to fabricate working 7 nm node devices. Probability of defect-free masks are explored for various 7 nm mask levels, including metal, contact, and gate cut layers. From these results, an assessment is made on the current viability of defect-free EUV masks for the 7 nm node.

  5. Writing time estimation of EB mask writer EBM-9000 for hp16nm/logic11nm node generation

    NASA Astrophysics Data System (ADS)

    Kamikubo, Takashi; Takekoshi, Hidekazu; Ogasawara, Munehiro; Yamada, Hirokazu; Hattori, Kiyoshi

    2014-10-01

    The scaling of semiconductor devices is slowing down because of the difficulty in establishing their functionality at the nano-size level and also because of the limitations in fabrications, mainly the delay of EUV lithography. While multigate devices (FinFET) are currently the main driver for scalability, other types of devices, such as 3D devices, are being realized to relax the scaling of the node. In lithography, double or multiple patterning using ArF immersion scanners is still a realistic solution offered for the hp16nm node fabrication. Other lithography candidates are those called NGL (Next Generation Lithography), such as DSA (Directed-Self-Assembling) or nanoimprint. In such situations, shot count for mask making by electron beam writers will not increase. Except for some layers, it is not increasing as previously predicted. On the other hand, there is another aspect that increases writing time. The exposure dose for mask writing is getting higher to meet tighter specifications of CD uniformity, in other words, reduce LER. To satisfy these requirements, a new electron beam mask writer, EBM-9000, has been developed for hp16nm/logic11nm generation. Electron optical system, which has the immersion lens system, was evolved from EBM-8000 to achieve higher current density of 800A/cm2. In this paper, recent shot count and dose trend are discussed. Also, writing time is estimated for the requirements in EBM-9000.

  6. Lithography of choice for the 45-nm node: new medium, new wavelength, or new beam?

    NASA Astrophysics Data System (ADS)

    Uesawa, Fumikatsu; Katsumata, Mikio; Ogawa, Kazuhisa; Takeuchi, Koichi; Omori, Shinji; Yoshizawa, Masaki; Kawahira, Hiroichi

    2004-05-01

    In order to clarify the direction of the lithography for the 45 nm node, the feasibilities of various lithographic techniques for gate, metal, and contact layers are studied by using experimental data and aerial image simulations. The focus and exposure budget have been determined from the actual data and the realistic estimation such as the focus distributions across a wafer measured by the phase shift focus monitor (PSFM), the focus and exposure reproducibility of the latest exposure tools, and the anticipated 45 nm device topography, etc. 193 nm lithography with a numerical aperture (NA) of 0.93 achieves the half pitch of 70 nm (hp70) by using an attenuated phase shift mask (att-PSM) and annular illumination. 193 nm immersion lithography has the possibility to achieve the hp60 without an alternative PSM (alt-PSM). For a gate layer, 50-nm/130-nm line-and-space (L/S) patterns as well as 50 nm isolated lines can be fabricated by an alt-PSM. Although specific aberrations degrade the critical dimension (CD) variation of an alt-PSM, +/-2.6 nm CD uniformity (CDU) is demonstrated by choosing the well-controlled projection lens and using a high flatness wafer. For a contact layers, printing 90 nm contacts is very critical by optical lithography even if the aggressive resolution enhancement technique (RET) is used. Especially for dense contact, the mask error factor (MEF) increases to around 10 and practical process margin is not available at all. On the other hand, low-energy electron-beam proximity-projection lithography (LEEPL) can fabricate 80 nm contact with large process margin. As a lithography tool for the contact layers of the 45 nm node devices, LEEPL is expected to replace 193 nm lithography.

  7. Achieving CDU requirement for 90-nm technology node and beyond with advanced mask making process technology

    NASA Astrophysics Data System (ADS)

    Tzu, San-De; Chang, Chung-Hsing; Chen, Wen-Chi; Kliem, Karl-Heinz; Hudek, Peter; Beyer, Dirk

    2005-01-01

    For 90nm node and beyond technology generations, one of the most critical challenges is how to meet the local CD uniformity (proximity) and global CD uniformity (GCDU) requirements within the exposure field. Both of them must be well controlled in the mask making process: (1) proximity effect and, (2) exposure pattern loading effect, or the so-called e-beam "fogging effect". In this paper, we report a method to improve our global CDU by means of a long range fogging compensation together with the Leica SB350 MW. This exposure tool is operated at 50keV and 1nm design grid. The proximity correction is done by the software - package "PROXECCO" from PDF Solutions. We have developed a unique correction method to reduce the fogging effect in dependency of the pattern density of the mask. This allows us to meet our customers" CDU specifications for the 90nm node and beyond.

  8. Reflective electron-beam lithography performance for the 10nm logic node

    NASA Astrophysics Data System (ADS)

    Freed, Regina; Gubiotti, Thomas; Sun, Jeff; Cheung, Anthony; Yang, Jason; McCord, Mark; Petric, Paul; Carroll, Allen; Ummethala, Upendra; Hale, Layton; Hench, John; Kojima, Shinichi; Mieher, Walter; Bevis, Chris F.

    2012-11-01

    Maskless electron beam lithography has the potential to extend semiconductor manufacturing to the sub-10 nm technology node. KLA-Tencor is currently developing Reflective Electron Beam Lithography (REBL) for high-volume 10 nm logic (16 nm HP). This paper reviews progress in the development of the REBL system towards its goal of 100 wph throughput for High Volume Lithography (HVL) at the 2X and 1X nm nodes. In this paper we introduce the Digital Pattern Generator (DPG) with integrated CMOS and MEMs lenslets that was manufactured at TSMC and IMEC. For REBL, the DPG is integrated to KLA-Tencor pattern generating software that can be programmed to produce complex, gray-scaled lithography patterns. Additionally, we show printing results for a range of interesting lithography patterns using Time Domain Imaging (TDI). Previously, KLA-Tencor reported on the development of a Reflective Electron Beam Lithography (REBL) tool for maskless lithography at and below the 22 nm technology node1. Since that time, the REBL team and its partners (TSMC, IMEC) have made good progress towards developing the REBL system and Digital Pattern Generator (DPG) for direct write lithography. Traditionally, e-beam direct write lithography has been too slow for most lithography applications. Ebeam direct write lithography has been used for mask writing rather than wafer processing since the maximum blur requirements limit column beam current - which drives e-beam throughput. To print small features and a fine pitch with an e-beam tool requires a sacrifice in processing time unless one significantly increases the total number of beams on a single writing tool. Because of the continued uncertainty with regards to the optical lithography roadmap beyond the 22 nm technology node, the semiconductor equipment industry is in the process of designing and testing e-beam lithography tools with the potential for HVL.

  9. Pattern wiggling investigation of self-aligned double patterning for 2x nm node NAND Flash and beyond

    NASA Astrophysics Data System (ADS)

    Lin, You-Yu; Chen, Chun-Chi; Li, Chia-Yu; Wang, Zih-Song; Chen, Ching-Hua

    2013-03-01

    Double patterning technology (DPT) has been identified as the extension of optical photolithography technologies to 3x nm half-pitch and below to fill in the gap between Immersion and EUV lithography. Self-aligned double patterning (SADP) technology utilized mature process to reduce risk and faster time to support the continuation of Moore's Law. As for the SADP process, the suitable hard mask (HM) material as following core pattern selection is quite important. Usually, the severe pattern deformation -wiggling, is easy to happen as the line/space patterns scaled down to below 35nm, and it ultimately prevents the successful pattern transfer. In this paper, using the amorphous carbon as HM, it was found that wiggling was caused by serious chemical side-etch during SADP dry etch process. However, an effective of advanced carbon material with high etch selectivity and low etch rate by appropriate film modification can be successful in SADP without wiggling side effect for 2x nm node NAND Flash application. This extraordinary HM can be considered as a potential choice for SADP process continual performing.

  10. Particle removal challenges with EUV patterned mask for the sub-22nm HP node

    SciTech Connect

    Rastegar, A.; Eichenlaub, S.; Kadaksham, A. J.; Lee, B.; House, M.; Huh, S.; Cha, B.; Yun, H.; Mochi, I.; Goldberg, K. A.

    2010-03-12

    The particle removal efficiency (PRE) of cleaning processes diminishes whenever the minimum defect size for a specific technology node becomes smaller. For the sub-22 nm half-pitch (HP) node, it was demonstrated that exposure to high power megasonic up to 200 W/cm{sup 2} did not damage 60 nm wide TaBN absorber lines corresponding to the 16 nm HP node on wafer. An ammonium hydroxide mixture and megasonics removes {ge}50 nm SiO{sub 2} particles with a very high PRE, A sulfuric acid hydrogen peroxide mixture (SPM) in addition to ammonium hydroxide mixture (APM) and megasonic is required to remove {ge}28 nm SiO{sub 2} particles with a high PRE. Time-of-flight secondary ion mass spectroscopy (TOFSIMS) studies show that the presence of O{sub 2} during a vacuum ultraviolet (VUV) ({lambda} = 172 nm) surface conditioning step will result in both surface oxidation and Ru removal, which drastically reduce extreme ultraviolet (EUV) mask life time under multiple cleanings. New EUV mask cleaning processes show negligible or no EUV reflectivity loss and no increase in surface roughness after up to 15 cleaning cycles. Reviewing of defect with a high current density scanning electron microscope (SEM) drastically reduces PRE and deforms SiO{sub 2} particles. 28 nm SiO{sub 2} particles on EUV masks age very fast and will deform over time, Care must be taken when reviewing EUV mask defects by SEM. Potentially new particles should be identified to calibrate short wavelength inspection tools, Based on actinic image review, 50 nm SiO{sub 2} particles on top of the EUV mask will be printed on the wafer.

  11. Imaging challenges in 20nm and 14nm logic nodes: hot spots performance in Metal1 layer

    NASA Astrophysics Data System (ADS)

    Timoshkov, V.; Rio, D.; Liu, H.; Gillijns, W.; Wang, J.; Wong, P.; Van Den Heuvel, D.; Wiaux, V.; Nikolsky, P.; Finders, J.

    2013-10-01

    The 20nm Metal1 layer, based on ARM standard cells, has a 2D design with minimum pitch of 64nm. This 2D design requires a Litho-Etch-Litho-Etch (LELE) double patterning. The whole design is divided in 2 splits: Me1A and Me1B. But solution of splitting conflicts needs stitching at some locations, what requires good Critical Dimension (CD) and overlay control to provide reliable contact between 2 stitched line ends. ASML Immersion NXT tools are aimed at 20 and 14nm logic production nodes. Focus control requirements become tighter, as existing 20nm production logic layouts, based on ARM, have about 50-60nm focus latitude and tight CD Uniformity (CDU) specifications, especially for line ends. IMEC inspected 20nm production Metal1 ARM standard cells with a Negative Tone Development (NTD) process using the Process Window Qualification-like technique experimentally and by Brion Tachyon LMC by simulations. Stronger defects were found thru process variations. A calibrated Tachyon model proved a good overall predictability capability for this process. Selected defects are likely to be transferred to hard mask during etch. Further, CDU inspection was performed for these critical features. Hot spots showed worse CD uniformity than specifications. Intra-field CDU contribution is significant in overall CDU budget, where reticle has major impact due to high MEEF of hot spots. Tip-to-Tip and tip-to-line hot spots have high MEEF and its variation over the field. Best focus variation range was determined by best focus offsets between hot spots and its variation within the field.

  12. Considering mask pellicle effect for more accurate OPC model at 45nm technology node

    NASA Astrophysics Data System (ADS)

    Wang, Ching-Heng; Liu, Qingwei; Zhang, Liguo

    2008-11-01

    Now it comes to the 45nm technology node, which should be the first generation of the immersion micro-lithography. And the brand-new lithography tool makes many optical effects, which can be ignored at 90nm and 65nm nodes, now have significant impact on the pattern transmission process from design to silicon. Among all the effects, one that needs to be pay attention to is the mask pellicle effect's impact on the critical dimension variation. With the implement of hyper-NA lithography tools, light transmits the mask pellicle vertically is not a good approximation now, and the image blurring induced by the mask pellicle should be taken into account in the computational microlithography. In this works, we investigate how the mask pellicle impacts the accuracy of the OPC model. And we will show that considering the extremely tight critical dimension control spec for 45nm generation node, to take the mask pellicle effect into the OPC model now becomes necessary.

  13. CP element based design for 14nm node EBDW high volume manufacturing

    NASA Astrophysics Data System (ADS)

    Maruyama, Takashi; Machida, Yasuhide; Sugatani, Shinji; Takita, Hiroshi; Hoshino, Hiromi; Hino, Toshio; Ito, Masaru; Yamada, Akio; Iizuka, Tetsuya; Komatsu, Satoshi; Ikeda, Makoto; Asada, Kunihiro

    2012-03-01

    We had previously established CP (character projection) based EBDW technology for 65nm and 45nm device production. And recently we have confirmed the resolution of 14nm L&S patterns which meets 14nm and beyond node logic requirement with CP exposure. From these production achievement and resolution potential, with multi-beam EBDW and CP function, MCC [1] could be one of the most promising technologies for future high volume manufacturing if exposure throughput was drastically enhanced. We have set target throughput as 100 WPH to meet HVM (high volume manufacturing) requirement. Our designed parameters to attain 100 WPH for 14nm result in 150 beams, 10cluster, 100 Giga shots/wafer, 250A/cm^2 and 75uC/cm^2. In addition to multi-beam, drastic exposure shot reduction is indispensable to attain 100 WPH for 14nm node. We have aggressively targeted 100 Giga shot count which is equivalent to covering 300mm wafer with 0.8um x 0.8um square fairly large tile. All device circuit blocks should be structured with only CP defined parts and we should trace back to upstream design flow to RTL. We call this methodology "CP element based design". In near future, Litho-Friendly restricted design would be commonly used [3] [4]. Our CP defined tile based regular layout would be highly compatible with these ultra-regular design approaches. The primal design factors are Logic cell, Memory macro and random interconnect. We have established concepts to accomplish high volume production with CP-based EBDW at 14nm technology node.

  14. Photomask etch system and process for 10nm technology node and beyond

    NASA Astrophysics Data System (ADS)

    Chandrachood, Madhavi; Grimbergen, Michael; Yu, Keven; Leung, Toi; Tran, Jeffrey; Chen, Jeff; Bivens, Darin; Yalamanchili, Rao; Wistrom, Richard; Faure, Tom; Bartlau, Peter; Crawford, Shaun; Sakamoto, Yoshifumi

    2015-10-01

    While the industry is making progress to offer EUV lithography schemes to attain ultimate critical dimensions down to 20 nm half pitch, an interim optical lithography solution to address an immediate need for resolution is offered by various integration schemes using advanced PSM (Phase Shift Mask) materials including thin e-beam resist and hard mask. Using the 193nm wavelength to produce 10nm or 7nm patterns requires a range of optimization techniques, including immersion and multiple patterning, which place a heavy demand on photomask technologies. Mask schemes with hard mask certainly help attain better selectivity and hence better resolution but pose integration challenges and defectivity issues. This paper presents a new photomask etch solution for attenuated phase shift masks that offers high selectivity (Cr:Resist > 1.5:1), tighter control on the CD uniformity with a 3sigma value approaching 1 nm and controllable CD bias (5-20 nm) with excellent CD linearity performance (<5 nm) down to the finer resolution. The new system has successfully demonstrated capability to meet the 10 nm node photomask CD requirements without the use of more complicated hard mask phase shift blanks. Significant improvement in post wet clean recovery performance was demonstrated by the use of advanced chamber materials. Examples of CD uniformity, linearity, and minimum feature size, and etch bias performance on 10 nm test site and production mask designs will be shown.

  15. Holistic overlay control for multi-patterning process layers at the 10nm and 7nm nodes

    NASA Astrophysics Data System (ADS)

    Verstappen, Leon; Mos, Evert; Wardenier, Peter; Megens, Henry; Schmitt-Weaver, Emil; Bhattacharyya, Kaustuve; Adam, Omer; Grzela, Grzegorz; van Heijst, Joost; Willems, Lotte; Wildenberg, Jochem; Ignatova, Velislava; Chen, Albert; Elich, Frank; Rajasekharan, Bijoy; Vergaij-Huizer, Lydia; Lewis, Brian; Kea, Marc; Mulkens, Jan

    2016-03-01

    Multi-patterning lithography at the 10-nm and 7-nm nodes is driving the allowed overlay error down to extreme low values. Advanced high order overlay correction schemes are needed to control the process variability. Additionally the increase of the number of split layers results in an exponential increase of metrology complexity of the total overlay and alignment tree. At the same time, the process stack includes more hard-mask steps and becomes more and more complex, with as consequence that the setup and verification of the overlay metrology recipe becomes more critical. All of the above require a holistic approach that addresses total overlay optimization from process design to process setup and control in volume manufacturing. In this paper we will present the holistic overlay control flow designed for 10-nm and 7-nm nodes and illustrate the achievable ultimate overlay performance for a logic and DRAM use case. As figure 1 illustrates we will explain the details of the steps in the holistic flow. Overlay accuracy is the driver for target design and metrology tool optimization like wavelength and polarization. We will show that it is essential to include processing effects like etching and CMP which can result in a physical asymmetry of the bottom grating of diffraction based overlay targets. We will introduce a new method to create a reference overlay map, based on metrology data using multiple wavelengths and polarization settings. A similar approach is developed for the wafer alignment step. The overlay fingerprint correction using linear or high order correction per exposure (CPE) has a large amount of parameters. It is critical to balance the metrology noise with the ultimate correction model and the related metrology sampling scheme. Similar approach is needed for the wafer align step. Both for overlay control as well as alignment we have developed methods which include efficient use of metrology time, available for an in the litho-cluster integrated

  16. Evaluation of SCAA mask technology as a pathway to the 65-nm node

    NASA Astrophysics Data System (ADS)

    Beach, James V.; Petersen, John S.; Maslow, Mark J.; Gerold, David J.; McCafferty, Diane C.

    2003-06-01

    This study takes an integrated approach utilizing a combination of high NA 193 nm lithography, a sidewall chrome alternating aperture (SCAA) phase shift mask, optical proximity correction (OPC) and customized illumination in an attempt to demonstrate the feasibility of using 193 nm lithography to support the 65 nm node. A SCAA mask was designed and built with line/space patterns ranging in pitch from 300 nm down to 140 nm. A range of mask biases were applied to the zero and pi spaces in order to examine to response of the lithography to a combination of the SCAA approach and asymmetric biasing. In combination to the asymmetric biasing, overlay bracketing was applied in order to measure the chrome overlay tolerances of the mask. Simulations suggested that an unconventionally small sigma of 0.15 would be the optimum coherence for a high 193 nm optical system. A custom 0.15 sigma partial coherence illuminator was, therefore, built and installed in the experimental ASML Micrascan V 0.75 NA 193 nm scanner. Wafers were exposed using 190 nm of 193 nm resist and an organic BARC. The 70 nm 1:1 line/space patterns resolved with a depth of focus of about 0.2 μm. The 75 nm 1:1 line/space patterns showed a 0.3-0.4 μm depth of focus. Both of these process windows were limited by pattern collapse. Addressing the pattern collapse may improve the depth of focus. Comparing mask measurements to wafer measurements show that little or no asymmetric biasing in necessary to balance the pitch. Moreover, the measured pitch was stable over a focus range of at least 0.4 microns demonstrating that any phase imbalance present was not significantly affecting the observed lithography.

  17. Challenges in the Plasma Etch Process Development in the sub-20nm Technology Nodes

    NASA Astrophysics Data System (ADS)

    Kumar, Kaushik

    2013-09-01

    For multiple generations of semiconductor technologies, RF plasmas have provided a reliable platform for critical and non-critical patterning applications. The electron temperature of processes in a RF plasma is typically several electron volts. A substantial portion of the electron population is within the energy range accessible for different types of electron collision processes, such as electron collision dissociation and dissociative electron attachment. When these electron processes occur within a small distance above the wafer, the neutral species, radicals and excited molecules, generated from these processes take part in etching reactions impacting selectivity, ARDE and micro-loading. The introduction of finFET devices at 22 nm technology node at Intel marks the transition of planar devices to 3-dimensional devices, which add to the challenges to etch process in fabricating such devices. In the sub-32 nm technology node, Back-end-of-the-line made a change with the implementation of Trench First Metal Hard Mask (TFMHM) integration scheme, which has hence gained traction and become the preferred integration of low-k materials for BEOL. This integration scheme also enables Self-Aligned Via (SAV) patterning which prevents via CD growth and confines via by line trenches to better control via to line spacing. In addition to this, lack of scaling of 193 nm Lithography and non-availability of EUV based lithography beyond concept, has placed focus on novel multiple patterning schemes. This added complexity has resulted in multiple etch schemes to enable technology scaling below 80 nm Pitches, as shown by the memory manufacturers. Double-Patterning and Quad-Patterning have become increasingly used techniques to achieve 64 nm, 56 nm and 45 nm Pitch technologies in Back-end-of-the-line. Challenges associated in the plasma etching of these multiple integration schemes will be discussed in the presentation. In collaboration with A. Ranjan, TEL Technology Center, America

  18. The SEMATECH Berkeley microfield exposure tool: learning a the 22-nm node and beyond

    SciTech Connect

    Naulleau, Patrick; Anderson, Christopher; Baclea-an, Lorie-Mae; Denham, Paul; George, Simi; Goldberg, Kenneth A.; Goldstein, Michael; Hoef, Brian; Hudyma, Russ; Jones, Gideon; Koh, Chawon; La Fontaine, Bruno; McClinton, Brittany; Miyakawa, Ryan; Montgomery, Warren; Roller, John; Wallow, Tom; Wurm, Stefan

    2009-02-16

    Microfield exposure tools (METs) continue to playa dominant role in the development of extreme ultraviolet (EUV) resists. One of these tools is the SEMATECH Berkeley 0.3-NA MET operating as a SEMATECH resist and mask test center. Here we present an update summarizing the latest resist test and characterization results. The relatively small numerical aperture and limited illumination settings expected from 1st generation EUV production tools make resist resolution a critical issue even at the 32-nm node. In this presentation, sub 22 nm half pitch imaging results of EUV resists are reported. We also present contact hole printing at the 30-nm level. Although resist development has progressed relatively well in the areas of resolution and sensitivity, line-edge-roughness (LER) remains a significant concern. Here we present a summary of recent LER performance results and consider the effect of system-level contributors to the LER observed from the SEMA TECH Berkeley microfield tool.

  19. Characterization of optical proximity matching for 130-nm node gate line width

    NASA Astrophysics Data System (ADS)

    Zheng, Sandra; Zhang, Gary; Wang, ChangAn; Detweiler, Shangting F.

    2003-06-01

    As IC density shrinks based on Moore"s law, optical lithography continually is scaled to print ever-smaller features by using resolution enhancement techniques such as phase shift mask, optical proximity correction (OPC), off-axis illumination and sub-resolution assistant features. OPC has been playing a key role to maximize the overlapping process window through pitch in the sub-wavelength optical lithography. As an important cost control measure, one general OPC model is applied to the full exposure field across multiple scanners. To implement this technique, optical proximity matching of line width across the field and across multiple tools turns out to be very crucial particularly at gate pattern. In addition, it is very important to obtain reliable critical dimension (CD) data sets with low noise level and high accuracy from the metrology tool. Otherwise, extracting the real scanner fingerprint in term of CD can not be achieved with precision in the order of 1nm~2nm. Scatterometry CD measurements have demonstrated excellent results to overcome this problem. The methodology of Scatterometry is emerging as one of the best metrology tool candidates in terms of gate line width control for technology nodes beyond 130nm. This paper investigates the sources of error that consume the CD budget of optical proximity matching for line through pitch (LTP). The study focuses on the 130nm technology node and uses experimental data and Prolith resist vector model based simulations. Scatterometer CD measurements of LTP are used for the first time and effectively correlated to lens aberrations and effective partial coherence (EPC) measurements which were extracted by Litel In-situ Interferometer (ISI) and Source Metrology Instrument (SMI). Implications of optical proximity matching are also discussed for future technology nodes. From the results, the paper also demonstrates the efficacy of scatterometer line through pitch measurements for OPC characterization.

  20. EUV and optical lithographic pattern shift at the 5nm node

    NASA Astrophysics Data System (ADS)

    Hosler, Erik R.; Thiruvengadam, Sathish; Cantone, Jason R.; Civay, Deniz E.; Schroeder, Uwe P.

    2016-03-01

    At the 5 nm technology node there are competing strategies for patterning: high-NA EUV, double patterning 0.33 NA EUV and a combination of optical self-aligned solutions with EUV. This paper investigates the impact of pattern shift based on the selected patterning strategy. A logic standard cell connection between TS and M0 is simulated to determine the impact of lithographic pattern shift on the overlay budget. At 5 nm node dimensions, high-NA EUV is necessary to expose the most critical layers with a single lithography exposure. The impact of high-NA EUV lithography is illustrated by comparing the pattern shift resulting from 0.33 NA vs. 0.5x NA. For the example 5 nm transistor, cost-beneficial lithography layers are patterned with EUV and the other layers are patterned optically. Both EUV and optical lithography simulations are performed to determine the maximum net pattern shift. Here, lithographic pattern shift is quantified in terms of through-focus error as well as pattern-placement error. The overlay error associated with a hybrid optical/self-aligned and EUV cut patterning scheme is compared with the results of an all EUV solution, providing an assessment of two potential patterning solutions and their impact the overall overlay budget.

  1. Top coat less resist process development for contact layer of 40nm node logic devices

    NASA Astrophysics Data System (ADS)

    Fujita, Masafumi; Uchiyama, Takayuki; Furusho, Tetsunari; Otsuka, Takahisa; Tsuchiya, Katsuhiro

    2010-04-01

    ArF immersion lithography has been introduced in mass production of 55nm node devices and beyond as the post ArF dry lithography. Due to the existence of water between the resist film and lens, we have many concerns such as leaching of PAG and quencher from resist film into immersion water, resist film swelling by water, keeping water in the immersion hood to avoid water droplets coming in contact with the wafer, and so on. We have applied to the ArF dry resist process an immersion topcoat (TC) process in order to ensure the hydrophobic property as well as one for protecting the surface. We investigate the TC-less resist process with an aim to improve CoO, the yield and productivity in mass production of immersion lithography. In this paper, we will report TC-less resist process development for the contact layer of 40nm node logic devices. It is important to control the resist surface condition to reduce pattern defects, in particular in the case of the contact layer. We evaluated defectivity and lithography performance of TC-less resist with changing hydrophobicity before and after development. Hydrophobicity of TC-less resist was controlled by changing additives with TC functions introduced into conventional ArF dry resist. However, the hydrophobicity control was not sufficient to reduce the number of Blob defects compared with the TC process. Therefore, we introduced Advanced Defect Reduction (ADR) rinse, which was a new developer rinse technique that is effective against hydrophobic surfaces. We have realized Blob defect reduction by hydrophobicity control and ADR rinse. Furthermore, we will report device performance, yield, and immersion defect data at 40nm node logic devices with TC-less resist process.

  2. Immersion defectivity study with volume production immersion lithography tool for 45 nm node and below

    NASA Astrophysics Data System (ADS)

    Nakano, Katsushi; Nagaoka, Shiro; Yoshida, Masato; Iriuchijima, Yasuhiro; Fujiwara, Tomoharu; Shiraishi, Kenichi; Owa, Soichi

    2008-03-01

    Volume production of 45nm node devices utilizing Nikon's S610C immersion lithography tool has started. Important to the success in achieving high-yields in volume production with immersion lithography has been defectivity reduction. In this study we evaluate several methods of defectivity reduction. The tools used in our defectivity analysis included a dedicated immersion cluster tools consisting of a Nikon S610C, a volume production immersion exposure tool with NA of 1.3, and a resist coater-developer LITHIUS i+ from TEL. In our initial procedure we evaluated defectivity behavior by comparing on a topcoat-less resist process to a conventional topcoat process. Because of its simplicity the topcoatless resist shows lower defect levels than the topcoat process. In a second study we evaluated the defect reduction by introducing the TEL bevel rinse and pre-immersion bevel cleaning techniques. This technique was shown to successfully reduce the defect levels by reducing the particles at the wafer bevel region. For the third defect reduction method, two types of tool cleaning processes are shown. Finally, we discuss the overall defectivity behavior at the 45nm node. To facilitate an understanding of the root cause of the defects, defect source analysis (DSA) was applied to separate the defects into three classes according to the source of defects. DSA analysis revealed that more than 99% of defects relate to material and process, and less than 1% of the defects relate to the exposure tool. Material and process optimization by collaborative work between exposure tool vendors, track vendors and material vendors is a key for success of 45nm node device manufacturing.

  3. Critical dimension metrology by through-focus scanning optical microscopy beyond the 22 nm node

    NASA Astrophysics Data System (ADS)

    Attota, Ravikiran; Bunday, Benjamin; Vartanian, Victor

    2013-06-01

    We present results using simulations and experiments to demonstrate metrological applications of the through-focus scanning optical microscopy (TSOM) down to features at and well below the International Technology Roadmap for Semiconductors' 22 nm node. The TSOM method shows the ability to detect sub-nanometer, three-dimensional shape variations such as line height, sidewall angle, width, and pitch in fins of fin-shaped field effect transistor structures using conventional optical microscopes. In addition, the method requires targets substantially smaller than the conventional target size. These results provide insight into the applicability of TSOM for economical critical dimension and yield enhancement metrology.

  4. Variable shaped beam writing throughput at the 45nm node and beyond

    NASA Astrophysics Data System (ADS)

    Sowers, A.; Shumway, M.; Kamna, M.; Wilcox, N.; Vernon, M.; Cole, D.; Chandramouli, M.

    2006-10-01

    Aggressive 193nm optical lithography solutions have in turn led to increasingly complex model-based OPC methodologies. This complexity married with the inevitable march of Moore's Law has produced a figure count explosion at the mask writer level. Variable shaped beam equipment manufacturers have tried to mollify the impact of this figure count explosion on the write time by the introduction of new technologies such as increased beam current density, faster DAC amplifiers and more efficient stage algorithms. Despite these efforts, mask manufacturers continue to explore ways of increasing writer throughput and available capacity. This study models the impact of further improvements in beam current density and settling times. Furthermore, this model will be used to prescribe the necessary improvement rates needed to keep pace with the shot count trends extending beyond the 45nm node.

  5. Limitations of optical reticle inspection for 45-nm node and beyond

    NASA Astrophysics Data System (ADS)

    Teuber, S.; Bzdurek, A.; Dürr, A. C.; Heumann, J.; Holfeld, C.

    2006-10-01

    Pushing the limits of optical lithography by immersion technology requires ever smaller feature sizes on the reticle. At the same time the k1-factor will be shifted close to the theoretical limit, e.g. the OPC structures on the reticle become very aggressive. For the mask shop it is essential to manufacture defect free masks. The minimum defect size, which needs to be found reliably, becomes smaller with decreasing feature sizes. Consequently optical inspection of masks for the 45nm node and below will be challenging. In this paper the limits of existing KLA inspection tools were investigated by systematic inspection of different structures without and with programmed defects. A test mask with isolated and dense lines/space patterns including programmed defects was manufactured, completely characterized by CD-SEM and inspected with state-of-the-art inspection system. AIMS TM measurements were used to evaluate the defect printing behavior. The analysis of the measurement data gives an input for requirements of reticle inspection of upcoming 45nm node and beyond.

  6. Practical use of hard mask process to fabricate fine photomasks for 45nm node and beyond

    NASA Astrophysics Data System (ADS)

    Kushida, Yasuyuki; Handa, Hitoshi; Maruyama, Hiroshi; Abe, Yuuki; Fujimura, Yukihiro; Yokoyama, Toshifumi

    2007-10-01

    New process with hard-mask (HM) blanks was evaluated as one of candidates for photomasks beyond 45nm-node. Through the fabrication of gate-layer photomasks, aptitude of the HM process for practical use was confirmed from the view of controllability on CDs and defects. Although conventional process for attenuated PSM was shown to have critical CD error which belongs to the "patterns" in bright-field masks, experimental data proved effectiveness of the HM process to control CDs after process optimization. With the HM blanks, remarkable reduction of CD error more than 80% of conventional process was confirmed. In this report, peculiar opaque defects are also shown to be a critical issue on the HM process. From results of design of experiment (DOE), combining the proper means to prepare the HM blanks with the optimized HM etching condition, these defects were proved to be controlled within the tolerance for production. Through the investigations, validity of the HM process on practical use for mask fabrication of 45nm-node and beyond is considered as conclusions.

  7. An improved method for characterizing photoresist lithographic and defectivity performance for sub-20nm node lithography

    NASA Astrophysics Data System (ADS)

    Amblard, Gilles; Purdy, Sara; Cooper, Ryan; Hockaday, Marjory

    2016-03-01

    The overall quality and processing capability of lithographic materials are critical for ensuring high device yield and performance at sub-20nm technology nodes in a high volume manufacturing environment. Insufficient process margin and high line width roughness (LWR) cause poor manufacturing control, while high defectivity causes product failures. In this paper, we focus on the most critical layer of a sub-20nm technology node LSI device, and present an improved method for characterizing both lithographic and post-patterning defectivity performance of state-of-the-art immersion photoresists. Multiple formulations from different suppliers were used and compared. Photoresists were tested under various process conditions, and multiple lithographic metrics were investigated (depth of focus, exposure dose latitude, line width roughness, etc.). Results were analyzed and combined using an innovative approach based on advanced software, providing clearer results than previously available. This increased detail enables more accurate performance comparisons among the different photoresists. Post-patterning defectivity was also quantified, with defects reviewed and classified using state-of-the-art inspection tools. Correlations were established between the lithographic and post-patterning defectivity performances for each material, and overall ranking was established among the photoresists, enabling the selection of the best performer for implementation in a high volume manufacturing environment.

  8. Optimum PEC Conditions Under Resist Heating Effect Reduction for 90nm Node Mask Writing

    NASA Astrophysics Data System (ADS)

    Park, Eu Sang; Lee, Jong Hwa; Park, Dong Il; Jeong, Woo Gun; Seo, Soon Kyu; Kim, Jin Min; Choi, Sang-Soo; Jeong, Soo-Hong

    2002-12-01

    For high-voltage vector e-beam writing systems, solving the resist heating effect problem is one of the highest priorities because it is a major factor affecting localized critical dimension (CD) uniformity. In order to write patterns for 90nm node devices, the utilization of proximity effect correction (PEC) is essential for e-beam mask writers to achieve high CD performance. In this study, the dependence of CD variation on e-beam write conditions was investigated under optimum PEC parameter conditions. Writing conditions such as current density, shot size, number of writing passes, and settling time were tested to see their affects on resist heating. Industry-standard Nippon Zeon ZEP 7000 resist was written by a Toshiba EBM-3500B 50KeV vector e-beam writer using patterns found in sub-130nm node devices. Results indicated that the main factor affecting resist heating CD variation for ZEP 7000 was in fact the e-beam writer shot size selected. Multi-pass writing was effective in reducing the CD variation, and the settling time of each shot in the EBM-3500B had very little influence.

  9. Lithography manufacturing implementation for 65 nm and 45 nm nodes with model-based scattering bars using IML technology

    NASA Astrophysics Data System (ADS)

    Hsu, Michael; Van Den Broeke, Doug; Laidig, Tom; Wampler, Kurt E.; Hollerbach, Uwe; Socha, Robert; Chen, J. F.; Hsu, Stephen; Shi, Xuelong

    2005-05-01

    Scattering Bars (SB) OPC, together with optimized illumination, is no doubt one of the critical enablers for low k1lithography manufacturing. (1) The manufacturing implementation of SB so far has been mainly based on rule-based approach. While thiis has been working well, a more effective model-based approach is much more desired lithographically for manufacturing at 65nm and 45nm nodes. This is necessary to ensure sufficient process margin using hyper NA for patterning random IC design. In our model-based SB (M-SB) OPC implementation, we have based on the patented IML. Technology from ASML MaskTools.(2,3) In this report, we use both dark field contact hole and clear field poly gate mask to demonstrate this implementation methodology. It is also quite applicable for dark field trench masks, such as local interconnect mask with damascene metal. For our full-chip implementation flow, the first step is to determine the critical design area and then to proceed with NA and illumination optimization. We show that, using LithoCruiser, we are able to select the best NA in combination with optimum illumination via a Diffraction Optical Element (DOE). The decision to use a custom DOE or one from the available DOE library from ASML can be made based on predicted process performance and cost effectiveness. With optimized illumination, it is now possible for MaskWeaver to construct an interference map for the full-chip mask pattern. Utilizing the interference map, M-SB OPC is generated. Next, model OPC can be applied with the presence of M-SB for the entire chip. It is important to note here, that from our experience, the model OPC must be calibrated with the presence of SB in order to achieve the desired accuracy. We report the full-chip processing benchmark using MaskWeaver to apply both M-SB and model OPC. For actual patterning performance, we have verified the full chip OPC treatment using SLiC, a DFM tool from Cadence. This implementation methodology can be applied to

  10. Meeting critical gate linewidth control needs at the 65 nm node

    NASA Astrophysics Data System (ADS)

    Mahorowala, Arpan; Halle, Scott; Gabor, Allen; Chu, William; Barberet, Alexandra; Samuels, Donald; Abdo, Amr; Tsou, Len; Yan, Wendy; Iseda, Seiji; Patel, Kaushal; Dirahoui, Bachir; Nomura, Asuka; Ahsan, Ishtiaq; Azam, Faisal; Berg, Gary; Brendler, Andrew; Zimmerman, Jeffrey; Faure, Tom

    2006-03-01

    With the nominal gate length at the 65 nm node being only 35 nm, controlling the critical dimension (CD) in polysilicon to within a few nanometers is essential to achieve a competitive power-to-performance ratio. Gate linewidths must be controlled, not only at the chip level so that the chip performs as the circuit designers and device engineers had intended, but also at the wafer level so that more chips with the optimum power-to-performance ratio are manufactured. Achieving tight across-chip linewidth variation (ACLV) and chip mean variation (CMV) is possible only if the mask-making, lithography, and etching processes are all controlled to very tight specifications. This paper identifies the various ACLV and CMV components, describes their root causes, and discusses a methodology to quantify them. For example, the site-to-site ACLV component is divided into systematic and random sub-components. The systematic component of the variation is attributed in part to pattern density variation across the field, and variation in exposure dose across the slit. The paper demonstrates our team's success in achieving the tight gate CD tolerances required for 65 nm technology. Certain key challenges faced, and methods employed to overcome them are described. For instance, the use of dose-compensation strategies to correct the small but systematic CD variations measured across the wafer, is described. Finally, the impact of immersion lithography on both ACLV and CMV is briefly discussed.

  11. Process characterization of pitch-split resist materials for application at 16nm node

    NASA Astrophysics Data System (ADS)

    Holmes, Steven J.; Tang, Cherry; Arnold, John C.; Yin, Yunpeng; Chen, Rex; Fender, Nicolette; Osborn, Brian; Dabbagh, Gary; Liu, Sen; Colburn, Matthew; Varanasi, Rao P.; Slezak, Mark

    2010-04-01

    Lithographic scaling beyond the 22 nm node requires double patterning techniques to achieve pitch values below 80nm. The semiconductor industry is focusing on the development of several process techniques including track-only lithographic processing methods in order to reduce cost, cycle time and defects. Initial efforts for track-only double expose processes have relied on the use of chemical freeze materials to prevent inter-mixing of resists, and also by means of thermal curable materials. These two techniques may be complementary, in the sense that a chemical freeze may be very robust for protection of exposed regions, while thermal cure systems may provide strong protection of large unexposed areas. We will describe our results with mainly the thermal-cure double patterning resist materials, and the application of these materials to the fabrication of sub-80 nm pitch semiconductor structures. We will summarize the process window and defect capability of these materials, for both line/space and via applications.

  12. Mask roughness and its implications for LER at the 22- and 16-nm nodes

    SciTech Connect

    Naulleau, Patrick; George, Simi A.; McClinton, Brittany M.

    2010-02-16

    Line-edge roughness (LER) remains the most significant challenge facing the development of extreme ultraviolet (EUV) resist. The mask, however, has been found to be a significant contributor to image-plane LER. This has long been expected based on modeling and has more recently been demonstrated experimentally. Problems arise from both mask-absorber LER as well as mask multilayer roughness leading to random phase variations in the reflected beam and consequently speckle. Understanding the implications this has on mask requirements for the 22-nm half pitch node and below is crucial. Modeling results indicate a replicated surface roughness (RSR) specification of 50 pm and a ruthenium capping layer roughness specification of 440 pm. Moreover, modeling indicates that it is crucial to achieve the current ITRS specifications for mask absorber LER which is significantly smaller than current capabilities.

  13. Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

    NASA Astrophysics Data System (ADS)

    Yin, Lan; Bozler, Carl; Harburg, Daniel V.; Omenetto, Fiorenzo; Rogers, John A.

    2015-01-01

    Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

  14. Phase-shifted assist feature OPC for sub-45-nm node optical lithography

    NASA Astrophysics Data System (ADS)

    Yoon, Gi-Sung; Kim, Hee-Bom; Lee, Jeung-Woo; Choi, Seong-Woon; Han, Woo-Sung

    2007-03-01

    Hyper numerical aperture (NA) implemented in immersion exposure system makes the semiconductor business enable to enter sub-45nm node optical lithography. Optical proximity correction(OPC) utilizing SRAF has been an essential technique to control critical dimension (CD) and to enhance across pitch performance in sub-wavelength lithography. Mask lithography, however, is getting more challenging with respect to patterning and processing sub-resolution assist features (SRAFs): the higher aspect ratio of mask structure, the more vulnerable. Mask manufacturing environment for DRAM and Flash becomes harsher mainly due to mask patterning problem especially pattern linearity, which causes pattern broken, inspection issue, and finally CD issue on wafer. When a pattern in relatively isolated pitches has small or large assist features, the assist features may bring unexpected CD or print on wafer. A frequency-preserving assist bar solution is the most preferred one, but it is difficult to realize for opaque assist features due to printability. In this paper, we propose a new type assist feature dubbed "Phase-shifted Assist Bar" to improve process window and to solve the resolution constraint of mask at sub-45nm manufacturing process node. The concept of phase-shift assist bar is applying phase-shift to SRAF realized with trench structure on general mask, such as Binary and Attenuated Phase-Shifted Mask (Att.PSM). The characteristics of phase-shift assist bar are evaluated with rigorous 3D lithography simulation and analyzed through verification mask, which is containing hugely various size and placement of main and assist feature. The analysis of verification mask has been done with aerial image verification tool. This work focuses on the performance of phase-shift assist bar as a promising OPC technique for "immersion era" in terms of resolution enhancement technique, optical proximity correction, and patterning on mask.

  15. Resolution enhancement technology for ArF dry lithography at 65 nm node

    NASA Astrophysics Data System (ADS)

    Gao, Songbo; Li, Yanqui

    2007-12-01

    The performance of ArF dry lithography at 65 nm node was studied together with RET. Commercial software Prolith 9.0 and in-house-software MicroCruiser 5.0 were used for simulation and mass data process. The combination of different phase shift mask (PSM), off axis illumination and patterns were chosen for this research. The image contrast, nominal image log-slope (NILS), depth of focus (DOF) and resist profile were considered to judge the lithography performance. The results show that the combination of small sigma conventional illumination and alternating phase shift mask (alt- PSM) is the best choice for Line/Space (L/S) patterns of different pitches. The isolate L/S pattern can be imaged with a large image contrast and DOF if alt-PSM and several kinds of illumination (such as small sigma, annular, and quasar illumination) are joined together. For semi-dense and dense L/S pattern, good lithography performance can be reached by using only small sigma illumination and alt-PSM. The impact of polarization illumination was also considered. Y-polarization illumination enhances the image contrast, NILS and the DOF for most conditions. The Z-orientation resist image fidelity was studied by optimization of the double bottom anti-reflection coating (DBARC) and resist thickness. This research predicts that 65 nm L/S pattern can be fabricated by current ArF dry lithography system.

  16. Rigorous assessment of patterning solution of metal layer in 7 nm technology node

    NASA Astrophysics Data System (ADS)

    Gao, Weimin; Ciofi, Ivan; Saad, Yves; Matagne, Philippe; Bachmann, Michael; Gillijns, Werner; Lucas, Kevin; Demmerle, Wolfgang; Schmoeller, Thomas

    2016-01-01

    In a 7 nm node (N7), the logic design requires a critical poly pitch of 42 to 45 nm and a metal 1 (M1) pitch of 28 to 32 nm. Such high-pattern density pushes the 193 immersion lithography solution toward its limit and also brings extremely complex patterning scenarios. The N7 M1 layer may require a self-aligned quadruple patterning (SAQP) with a triple litho-etch (LE3) block process. Therefore, the whole patterning process flow requires multiple exposure+etch+deposition processes and each step introduces a particular impact on the pattern profiles and the topography. In this study, we have successfully integrated a simulation tool that enables emulation of the whole patterning flow with realistic process-dependent three-dimensional (3-D) profile and topology. We use this tool to study the patterning process variations of the N7 M1 layer including the overlay control, the critical dimension uniformity budget, and the lithographic process window (PW). The resulting 3-D pattern structure can be used to optimize the process flow, verify design rules, extract parasitics, and most importantly, simulate the electric field, and identify hot spots for dielectric reliability. As an example application, the maximum electric field at M1 tip-to-tip, which is one of the most critical patterning locations, has been simulated and extracted. The approach helps to investigate the impact of process variations on dielectric reliability. We have also assessed the alternative M1 patterning flow with a single exposure block using extreme ultraviolet lithography (EUVL) and analyzed its advantages compared to the LE3 block approach.

  17. Double exposure for the contact layer of the 65-nm node

    NASA Astrophysics Data System (ADS)

    Owe-Yang, Dah-Chung; Yu, S. S.; Chen, Harrison; Chang, C. Y.; Ho, Bang-Chein; Lin, John C.; Lin, Burn J.

    2005-05-01

    The critical dimension (CD) of contact holes for the 65-nm application specific integrated circuit (ASIC) is 100 nm according to the 2002 update of the International Technology Roadmap for Semiconductors. The common through-pitch depth of focus (DOF) of such contact holes is very small using the current ArF exposure tool. High-numerical-aperture (NA) ArF exposure tools are not expected to improve the common DOF that scales by the square of the numerical half aperture. High-transmission attenuated phase-shifting masks increase the DOF of isolated contact holes. Off-axis illumination such as annular or quadrupole illumination improves the DOF of dense contact holes. Nonetheless, both the isolated and the dense contact holes need to be printed within spec on logic circuit. To delineate 100-nm contact holes at several different pitches, we proposed the pack-and-unpack (PAU) process which employs double exposures. First, dummy holes are added to the surroundings of isolated contact holes facilitating the patterning of the resultant dense pattern with a resolution enhancement technique that favors dense contact holes. For example, dense holes are packed to 180-nm pitch and imaged with high-NA lens setting and quadrupole illumination. Then, the second image is used to open the desired holes or block the dummy contact holes. The purpose of this study was to develop new methods and new materials for the patterning of the second image. Three approaches were investigated. The first approach was forming an isolation layer to protect the first image; second, applying UV curing to harden the first image; third, using alcohol-based resists to pattern the second image. Among those three approaches of printing the second image, using resist in alcohols is the most convenient method. Even though the CD control of the second image is not so critical, resolution and process window of resists may need further improvement for 45-nm node and below. Using the second approach allows

  18. Low-contrast photoresist development model for OPC application at 10nm node

    NASA Astrophysics Data System (ADS)

    Wu, Cheng-En; Wei, David; Zhang, Charlie; Song, Hua

    2015-03-01

    The Optical Proximity Correction (OPC) model, a key to process yield in the mask synthesis flow, is getting more and more complicated and challenging at advanced technology nodes (1X nm). To achieve accurate critical dimension (CD) prediction and model robustness on varied designed patterns, a rigorously tuned compact model (RTCM) [1] that takes the photoresist chemical effects into considerations is strongly desired. A lithography process consists of three main stages: Exposure, Post-Exposure Bake (PEB), and Photoresist Development. Each stage is characterized by its fundamental physics or chemistry that governs the process of illumination induced photo-acid generation, thermally activated chemical reaction-diffusion, and developer dependent photoresist dissolution, respectively. The final resist profile is determined by the process details of all these stages directly or indirectly. For an ideal resist that the development contrast approaches infinity, resist development is aptly represented by a threshold model applied to the PEB latent image (acid or inhibitor concentration). So the quality of OPC modeling is largely determined by the fidelity of PEB latent image [2,3]. However, for some types of resist and developer used in Negative Tone Development (NTD), the development contrast shows a long tail without a sharp transition. For such low-contrast resist, the developed resist profile is no longer described well by the equilevel surface of PEB latent image. Going beyond the threshold approximation, we start from the fundamental equations of resist development physics and analyze the time evolution of development front that determines the resist profile. In this paper, a new compact model is derived to catch the main physics in resist Development, which is also simple and computationally efficient to suit for OPC applications. Comparison with S-LITHO rigorous solutions and real-wafer experiments with 1D and 2D test patterns have showed that the new compact model

  19. Hybrid OPC modeling with SEM contour technique for 10nm node process

    NASA Astrophysics Data System (ADS)

    Hitomi, Keiichiro; Halle, Scott; Miller, Marshal; Graur, Ioana; Saulnier, Nicole; Dunn, Derren; Okai, Nobuhiro; Hotta, Shoji; Yamaguchi, Atsuko; Komuro, Hitoshi; Ishimoto, Toru; Koshihara, Shunsuke; Hojo, Yutaka

    2014-03-01

    Hybrid OPC modeling is investigated using both CDs from 1D and simple 2D structures and contours extracted from complex 2D structures, which are obtained by a Critical Dimension-Scanning Electron Microscope (CD-SEM). Recent studies have addressed some of key issues needed for the implementation of contour extraction, including an edge detection algorithm consistent with conventional CD measurements, contour averaging and contour alignment. Firstly, pattern contours obtained from CD-SEM images were used to complement traditional site driven CD metrology for the calibration of OPC models for both metal and contact layers of 10 nm-node logic device, developed in Albany Nano-Tech. The accuracy of hybrid OPC model was compared with that of conventional OPC model, which was created with only CD data. Accuracy of the model, defined as total error root-mean-square (RMS), was improved by 23% with the use of hybrid OPC modeling for contact layer and 18% for metal layer, respectively. Pattern specific benefit of hybrid modeling was also examined. Resist shrink correction was applied to contours extracted from CD-SEM images in order to improve accuracy of the contours, and shrink corrected contours were used for OPC modeling. The accuracy of OPC model with shrink correction was compared with that without shrink correction, and total error RMS was decreased by 0.2nm (12%) with shrink correction technique. Variation of model accuracy among 8 modeling runs with different model calibration patterns was reduced by applying shrink correction. The shrink correction of contours can improve accuracy and stability of OPC model.

  20. Application of CPL reticle technology for the 65- and 50-nm node

    NASA Astrophysics Data System (ADS)

    Conley, Will; Van Den Broeke, Douglas J.; Socha, Robert J.; Wu, Wei; Litt, Lloyd C.; Lucas, Kevin; Nelson-Thomas, Carla M.; Roman, Bernard J.; Chen, J. Fung; Wampler, Kurt E.; Laidig, Thomas L.; Hsu, Stephen D.; Schaefer, Erika; Cassel, Shawn; Yu, Linda; Kasprowicz, Bryan S.; Progler, Christopher J.; Petersen, John S.; Gerold, David J.; Maslow, Mark John

    2003-06-01

    Each generation of semiconductor device technology drive new and interesting resolution enhancement technology (RET"s). The race to smaller and smaller geometry"s has forced device manufacturers to k1"s approaching 0.40. The authors have been investigating the use of Chromeless phase-shifting masks (CLM) exposed with ArF, high numerical aperture (NA), and off-axis illumination (OAI) has been shown to produce production worthy sub-100nm resist patterns with acceptable overlapped process window across feature pitch. There have been a number of authors who have investigated CLM in the past but the technology has never received mainstream attention due to constraints such as wet quartz etch during mask fabrication, limited approach to optical proximity correction (OPC), and exposure tool limitations such as on-axis illumination and too low of NA. With novel binary halftone OPC and a capable modern mask making process, it has become possible to achieve global and local pattern optimization of the phase shifter for a given layout especially for patterning features with dimension at sub-half-exposure wavelength. The authors have built a number of test structures that require superior 2D control for SRAM gate structures. In this paper the authors will focus on image process integration for the 65nm node. Emphasis on pattern layout, mask fabrication and image processing will be discussed. Furthermore, the authors will discuss defect printing, inspection and repair, mask error enhancement factor (MEEF) of 2D structures coupled with phase error, layout, and mask fabrication specifications.

  1. Enabling the 14nm node contact patterning using advanced RET solutions

    NASA Astrophysics Data System (ADS)

    Zeggaoui, N.; Landie, G.; Villaret, A.; Farys, V.; Yesilada, E.; Tritchkov, A.; Word, J.

    2015-09-01

    The 14nm node designs is getting more sophisticated, and printability issues become more critical which need more advanced techniques to fix. One of the most critical processes is the contact patterning due to the very aggressive design rules and the process window which becomes quickly limited. Despite the large number of RET applied, some hotspot configurations remain challenging. It becomes increasingly challenging to achieve sufficient process windows around the hot spots just using conventional process such as OPC and rule-based SRAF insertion. Although, it might be desirable to apply Inverse Lithography Technique (ILT) on all hot spots to guarantee ideal mask quality. However, because of the high number of hot spots to repair in the design, that solution might be much time consuming in term of OPC and mask processing. In this paper we present a hybrid OPC solution based on local ILT usage around hot spots. It is named as Local Printability Enhancement (LPE) flow. First, conventional OPC and SRAF placement is applied on the whole design. Then, we apply LPE solution only on the remaining problematic hot spots of the design. The LPE flow also takes into account the mask rules so that it maintains the mask rule check (MRC) compliance through the borders of the repaired hot spot's areas. We will demonstrate that the LPE flow enlarges the process window around hot spots and gives better lithography quality than baseline. The simulation results are confirmed on silicon wafer where all the hot spots are printed. We will demonstrate that LPE flow enlarges the depth of focus of the most challenging hot spot by 30nm compared to POR conventional solution. Because the proposed flow applies ILT solution on very local hot spot areas, the total OPC run time remains acceptable from manufacturing side.

  2. Recent CD AFM probe developments for sub-45 nm technology nodes

    NASA Astrophysics Data System (ADS)

    Liu, Hao-Chih; Osborne, Jason R.; Dahlen, Gregory A.; Greschner, Johann; Bayer, Thomas; Kalt, Samuel; Fritz, Georg

    2008-03-01

    This paper reports on new developments of advanced CD AFM probes after the prior introduction of "trident probes" in SPIE Advanced Lithography 2007 [1]. Trident probes, having sharpened extensions in the tip apex region, make possible bottom CD measurements within a few nanometers of the feature bottom corner; an area where other CD probes have difficulties due to tip shape limitations. Moreover, new metrology applications of trident probes have been developed for novel devices such as FinFET and vertical read/write hard disk heads. For ever smaller technology nodes, new probes evolved from the design of the trident probe. For example, the number of sharpened tip flares was reduced from three (trident) to two (bi-pod) to prevent possible interference of the third leg in the slow scan direction, as shown in Figure 3. Maintaining tip lateral stiffness as the tip size shrinks to less than 30 nm is vital for successful scanning. Consequently, a significant recent improvement is the change of probe shank cross-sectional geometry in order to maintain tip vertical aspect ratio of 1:5 (and lateral stiffness > 1 N/m). Finally, modifications of probe substrate are proposed and evaluated for current and new CD AFM systems. Hydrophobic, self-assembled monolayer (SAM) coatings were applied on CD probes to reduced tip "pull-away" distance1 during CD AFM scanning. Test results show that the pull away distance can be reduced more than 5 times on average (in some cases, by a factor of 15). Consequently, use of hydrophobic SAM coatings on CD probes mitigates pull-away distance thus allowing narrow trench CD measurements. We discuss limitations of prior CD AFM probes and design considerations of new CD probes. The characterization of first prototypes and evaluation of scan performance are presented in this work.

  3. Defects caused by blank masks and repair solution with nanomachining for 20nm node

    NASA Astrophysics Data System (ADS)

    Lee, HyeMi; Kim, ByungJu; Kim, MunSik; Jung, HoYong; Kim, Sang Pyo; Yim, DongGyu

    2014-09-01

    As the number of masks per wafer product set is increasing and low k1 lithography requires tight mask specifications, the patterning process below sub 20nm tech. node for critical layers will be much more expensive compared with previous tech. generations. Besides, the improved resolution and the zero defect level are necessary to meet tighter specifications on a mask and these resulted in the increased the blank mask price as well as the mask fabrication cost. Unfortunately, in spite of expensive price of blank masks, the certain number of defects on the blank mask is transformed into the mask defects and its ratio is increased. But using high quality blank mask is not a good idea to avoid defects on the blank mask because the price of a blank mask is proportional to specifications related to defect level. Furthermore, particular defects generated from the specific process during manufacturing a blank mask are detected as a smaller defect than real size by blank inspection tools because of its physical properties. As a result, it is almost impossible to prevent defects caused by blank masks during the mask manufacturing. In this paper, blank defect types which is evolved into mask defects and its unique characteristics are observed. Also, the repair issues are reviewed such as the pattern damage according to the defect types and the repair solution is suggested to satisfy the AIMS (Arial Image Measurement System) specification using a nanomachining tool.

  4. New tools to enable photomask repair to the 32nm node

    NASA Astrophysics Data System (ADS)

    Robinson, Tod; White, Roy; Bozak, Ron; Roessler, Ken; Arruza, Bernie; Hogle, Dennis; Archuletta, Mike; Lee, David

    2009-10-01

    The AFM-technology based technique of nanomachining has been well-proven in the area photomask repair since its introduction a decade ago. However, the problems and challenges facing the mask repair operator have changed significantly in this period, and ongoing engineering platform development has reflected these shifts, as well as refinements based on specialized experience with nanomachining repair technology. Improvements from this technical development include improved monitoring and control of the internal tool environment (to minimize AFM scan noise and thermal drift), and automation to easily and reliably clean and characterize the 3-dimensional shape of the NanoBitTM apex. For repair applications, improvements will be shown for the automated and operator-intuitive reconstruction of 3-dimensional nanometer-scale patterns on the photomask with referenced z-depth and xy alignment regardless of pattern orthogonality. Multiple pattern repair capability is also reviewed due to a greater diversity of available process options and multi-repair box capability with a common quartz-level z-reference point. Finally, it will be shown how all of these individual improvements work together to provide extended repair capability down to the 32 nm technology node.

  5. Device parameter optimization for sub-20 nm node HK/MG-last bulk FinFETs

    NASA Astrophysics Data System (ADS)

    Miao, Xu; Huaxiang, Yin; Huilong, Zhu; Xiaolong, Ma; Weijia, Xu; Yongkui, Zhang; Zhiguo, Zhao; Jun, Luo; Hong, Yang; Chunlong, Li; Lingkuan, Meng; Peizhen, Hong; Jinjuan, Xiang; Jianfeng, Gao; Qiang, Xu; Wenjuan, Xiong; Dahai, Wang; Junfeng, Li; Chao, Zhao; Dapeng, Chen; Simon, Yang; Tianchun, Ye

    2015-04-01

    Sub-20 nm node bulk FinFET PMOS devices with an all-last high-k/metal gate (HK/MG) process are fabricated and the influence of a series of device parameters on the device scaling is investigated. The high and thin Fin structure with a tapered sidewall shows better performance than the normal Fin structure. The punch through stop layer (PTSL) and source drain extension (SDE) doping profiles are carefully optimized. The device without SDE annealing shows a larger drive current than that with SDE annealing due to better Si crystal regrowth in the amorphous Fin structure after source/drain implantation. The band-edged MG has a better short channel effect immunity, but the lower effective work function (EWF) MG shows a larger driveability. A tradeoff choice for different EWF MGs should be carefully designed for the device's scaling. Project supported by the National 02 IC Projects and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences.

  6. Joint optimization of layout and litho for SRAM and logic towards the 20nm node using 193i

    NASA Astrophysics Data System (ADS)

    De Bisschop, Peter; Laenens, Bart; Iwase, Kazuya; Yao, Teruyoshi; Dusa, Mircea; Smayling, Michael C.

    2011-04-01

    This paper reports on a simulation study in which we compare different possibilities to find a litho solution for SRAM and Logic for planar technology nodes between 28 nm and 20 nm, using 193 nm immersion lithography. At these nodes, it becomes essential to include the layout itself into the optimization process. The so-called gridded layout style is an attractive candidate to facilitate the printability of several layers, but the benefit of this style, as compared to less restricted layout styles, is not well quantified for the various technology nodes of interest. We therefore compare it with two other, less restricted, layout styles, on an identical (small) SRAM-Logic test chip. Exploring a number of paths in the layout-style - litho-options search space, we try to quantify merits and trade-offs for some of the relevant options. We will show that layout restrictions are really becoming mandatory for the technology nodes studied in this paper. Other important enablers for these aggressive nodes are multiple patterning, the use of a local-interconnect layer, negative-tone development, SMO and the use of optimized free-form illumination sources (from which we also include a few initial wafer results).

  7. Evaluation of ArF lithography for 45-nm node implant layers

    NASA Astrophysics Data System (ADS)

    Bailey, T. C.; Maynollo, J.; Perez, J. J.; Popova, I.; Zhang, B.

    2007-03-01

    Scaling of designs to the 45nm or future nodes presents challenges for KrF lithography. The purpose of this work was to explore several aspects of ArF lithography for implant layers. A comparison of dark loss seen in a KrF resist and TARC system to that seen in an ArF system showed significant differences. While the KrF resist yielded dark loss that varied with CD and pitch, the ArF resist showed very little dark loss and no significant variation through the design space. ArF resist were observed to have marginal adhesion to various substrates. Improvements in adhesion performance were shown by pre-treating the substrate with various processes, of which an ozone clean provided the best results. Optimization of the HMDS priming conditions also improved adhesion, and it was observed that the HMDS reaction proceeds at different rates on different subsatrates, which is particularly important for implant layers where the resist must adhere to both Si and SiO II. The effect of ArF resist profile with varying reflectivity swing position is shown, and some investigation into reflectivity optimization techniques was performed. Low-index ArF TARC was shown to reduce the CD variation over polysilicon topography, and wet developable BARC was demonstrated to provide consistent profiles on both Si and SiO II substrates. Finally, a comparison of ArF and KrF resists after As implant indicates that the ArF resist showed similar shrinkage performance to the KrF resist.

  8. Estimate design sensitivity to process variation for the 14nm node

    NASA Astrophysics Data System (ADS)

    Landié, Guillaume; Farys, Vincent

    2016-03-01

    Looking for the highest density and best performance, the 14nm technological node saw the development of aggressive designs, with design rules as close as possible to the limit of the process. Edge placement error (EPE) budget is now tighter and Reticle Enhancement Techniques (RET) must take into account the highest number of parameters to be able to get the best printability and guaranty yield requirements. Overlay is a parameter that must be taken into account earlier during the design library development to avoid design structures presenting a high risk of performance failure. This paper presents a method taking into account the overlay variation and the Resist Image simulation across the process window variation to estimate the design sensitivity to overlay. Areas in the design are classified with specific metrics, from the highest to the lowest overlay sensitivity. This classification can be used to evaluate the robustness of a full chip product to process variability or to work with designers during the design library development. The ultimate goal is to evaluate critical structures in different contexts and report the most critical ones. In this paper, we study layers interacting together, such as Contact/Poly area overlap or Contact/Active distance. ASML-Brion tooling allowed simulating the different resist contours and applying the overlay value to one of the layers. Lithography Manufacturability Check (LMC) detectors are then set to extract the desired values for analysis. Two different approaches have been investigated. The first one is a systematic overlay where we apply the same overlay everywhere on the design. The second one is using a real overlay map which has been measured and applied to the LMC tools. The data are then post-processed and compared to the design target to create a classification and show the error distribution. Figure:

  9. Spectroscopic Ellipsometry based Scatterometry enabling 193nm Litho and Etch process control for the 110nm technology node and beyond

    NASA Astrophysics Data System (ADS)

    Hingst, Thomas; Marschner, Thomas; Moert, Manfred; Homilius, Jan; Guevremont, Marco; Hopkins, John; Elazami, Assim

    2003-05-01

    In the production of sub 140nm electronic devices, CD metrology is becoming more critical due to the increased demands placed on process control. CD metrology using CD-SEM is approaching its limits especially with respect to precision, resolution and depth of field. Potentially, scatterometry can measure structures down to 50nm with the appropriate precision. Additionally, as scatterometry is a model based technique it allows a full reconstruction of the line profile and the film stack. In this work we use SE based scatterometry in the control of a 110nm DRAM WSix Gate process at the Litho and the Mask Open step. We demonstrate the use of a single trapezoid as a basic shape model in FEM and field mapping applications as well as in a high volume production test. The scatterometry results are compared to CD-SEM data. We show that for the GC Litho application, n&k variations in some of the stack materials do not affect the scatterometry CD measurement significantly.

  10. Nodes

    NASA Technical Reports Server (NTRS)

    Hanson, John; Martinez, Andres; Petro, Andrew

    2015-01-01

    Nodes is a technology demonstration mission that is scheduled for launch to the International SpaceStation no earlier than Nov.19, 2015. The two Nodes satellites will be deployed from the Station in early 2016 todemonstrate new network capabilities critical to the operation of swarms of spacecraft. They will demonstrate the ability ofmulti spacecraft swarms to receive and distribute ground commands, exchange information periodically, andautonomously configure the network by determining which spacecraft should communicate with the ground each day ofthe mission.

  11. Continuous wave and passively Q-switched laser performance of Nd:LuxGd3-xGa5O12 crystal at 1062 nm

    NASA Astrophysics Data System (ADS)

    Fu, X. W.; Jia, Z. T.; Yang, H.; Li, Y. B.; Yuan, D. S.; Zhang, B. T.; Dong, C. M.; He, J. L.; Tao, X. T.

    2012-12-01

    Continuous wave (CW) and passively Q-switched (PQS) laser properties at 1062 nm of the Nd:LuxGd3-xGa5O12 (Nd:LGGG) disordered crystal have been demonstrated. The doping concentrations of Nd3+ and Lu3+ in the as obtained crystal were measured to be 0.96 and 0.66 at.%, respectively. In the CW regime, the output power of 9.73 W was obtained with an optical-to-optical efficiency as high as 60.7% and slope efficiency of 61.2%. During the passively Q-switched operation, the maximum output power of 1.24 W was achieved under the absorbed pump power of 6.86 W. The maximum peak power of 14.20 kW and single pulse energy of 148 μJ were obtained with the Toc = 10% under the absorbed pump power of 6.36 W. The results are much better than those obtained with Nd:LGGG crystal doped with 13.6 at.% Lu3+ and 0.53 at.% Nd3+ ions.

  12. Process development using negative tone development for the dark field critical layers in a 28nm node process

    NASA Astrophysics Data System (ADS)

    Versluijs, Janko; Truffert, Vincent; Murdoch, Gayle; De Bisschop, Peter; Trivkovic, Darko; Wiaux, Vincent; Kunnen, Eddy; Souriau, Laurent; Demuynck, Steven; Ercken, Monique

    2012-03-01

    The demand for ever shrinking semiconductor devices is driving efforts to reduce pattern dimensions in semiconductor lithography. In this work, the aim is to find a single patterning litho solution for a 28nm technology node using 193nm immersion lithography. Target poly pitch is 110nm and metal1 pitch is 90nm. For this, we have introduced a range of different techniques to reach this goal. At this node, it becomes essential to include the layout itself into the optimization process. This leads to the introduction of restricted design rules, together with the co-optimization of source and mask (SMO) and the use of customized illumination modes (freeform illumination sources; FlexrayTM). Also, negative tone development (NTD) is employed to further extend the applicability of 193nm immersion lithography. Traditionally, the printing of contacts and trenches is done by using a dark field mask in combination with a positive tone resist and positive tone development. The use of negative tone development enables images reversal. This allows benefiting from the improved imaging performance when exposing with bright field masks. The same features can be printed in positive tone resists and with improved process latitudes. At the same time intermediate metal (IM) layers are used to connect the front-end and back-end-of-line, resulting in huge area benefits compared to layouts without these IM layers. The use of these IM layers will not happen for the 28nm node, but is intended to be introduced towards the 20nm node, and beyond. Nevertheless, the choice was made to use this architecture to obtain a first learning cycle on this approach. In this study, the use of negative tone development is explored, and its use for the various dark field critical layers in a 28nm node process is successfully demonstrated. In order to obtain sufficiently large process windows, structures are printed larger than the designed target CD. As a consequence, a shrink of the structures needs to be

  13. A novel design-based global CDU metrology for 1X nm node logic devices

    NASA Astrophysics Data System (ADS)

    Yoon, Young-Keun; Chung, Dong H.; Kim, Min-Ho; Seo, Jung-Uk; Kim, Byung-Gook; Jeon, Chan-Uk; Hur, JiUk; Cho, Wonil; Yamamoto, Tetsuya

    2013-09-01

    As dimension of device shrinks to 1X nm node, an extreme control of critical dimension uniformity (CDU) of masks becomes one of key techniques for mask and wafer fabrication. For memory devices, a large number of optical techniques have been studied and applied to mask production so far. The advantages of these methods are to eliminate the sampling dependency due to their high throughput, to minimize the local CD errors due to their large field of view (FOV) and to improve the correlation with wafer infield uniformity if they have scanner-like optics. For logic devices, however, CD-SEM has been a single solution to characterize CD performance of logic masks for a long time and simple monitoring patterns, instead of the cell patterns, have been measured to monitor the CD quality of masks. Therefore a global CDU of the mask tends to show its ambiguity because of the limited number of measurement sites and large local CD errors. An application of optical metrology for logic mask is a challenging task because patterns are more complex and random in shape and because there is no guarantee of finding patterns for CDU everywhere on the mask. CDU map still consists of the results from the indirect measurements and the traditional definition of uniformity, a statistical deviation of a typical pattern, seems to be unsuitable for logic CDU. A new definition of CDU is required in order to maximize the coverage area on a mask. In this study, we have focused of the possibility of measuring cell patterns and of using an inspection tool with data base handling capability, KLA Teron617, to find the areas and positions where the repeating patterns exist and the patterns which satisfy a certain set of condition and we have devised a new definition of CDU, which can handle multiple target CDs. Then we have checked the feasibility and validity of our new methodology through evaluation its fundamental performance such as accuracy, repeatability, and correlation with other CD metrology

  14. Data preparation solution for e-beam multiple pass exposure: reaching sub-22nm nodes with a tool dedicated to 45 nm

    NASA Astrophysics Data System (ADS)

    Martin, Luc; Manakli, Serdar; Bayle, Sébastien; Choi, Kang-Hoon; Gutsch, Manuela; Pradelles, Jonathan; Bustos, Jessy

    2011-04-01

    Electron Beam Direct Write (EBDW) lithography is used in the IC manufacturing industry to sustain optical lithography for prototyping applications and low volume manufacturing. It is also used in R&D to develop advanced technologies, ahead of mass production. As microelectronics is now moving towards the 32nm node and beyond, the specifications in terms of dimension control and roughness becomes tighter. In addition, the shrink of the size and pitch of features significantly reduces the process window of lithographic tools. In EBDW, the standard proximity effects corrections only based on dose modulation show difficulties to provide the required Energy Latitude for patterning structures designed below 45nm. A new approach is thus needed to improve the process window of EBDW lithography and push its resolution capabilities. In previous papers, a new writing strategy based on multiple pass exposure has been introduced and optimized to pattern critical dense lines. This new technique consists in adding small electron Resolution Improvement Features (eRIFs) on top of the nominal structures. Then this new design is exposed in two successive passes with optimized doses. Previous studies were led to evaluate this new writing technique and establish rules to optimize the design of the eRIF. Significant improvements have already been demonstrated on SRAM and Logic structures down to the 16nm node. These results were obtained with a tool dedicated to the 45nm node. The next step of this work is thus to automatically implement the eRIF to correct large-scale layouts. In this paper, a new data preparation flow is set up for EBDW lithography. It uses the eRIF solution as a full advanced correction method for critical structures. The specific correction rules established in our previous studies are implemented to improve the CD control and the patterning of corners and line ends. Moreover, the dose and shape of the eRIFs are automatically tuned to best fit the nominal design

  15. DOE experiment for scattering bars optimization at the 90nm node

    NASA Astrophysics Data System (ADS)

    Bouton, G.; Connolly, B.; Courboin, D.; Di Giacomo, A.; Gasnier, F.; Lallement, R.; Parker, D.; Pindo, M.; Richoilley, J. C.; Royere, F.; Rameau-Savio, A.; Tissier, M.

    2011-03-01

    Scattering bars (SB) are sub-resolution lines added to the original database during Resolution Enhancement Techniques (RET) treatments. Their goal is stabilizing the CD of the adjacent polygons (by suppressing or reducing secondary diffraction waves). SB increase the process window in the litho process by lowering the first derivative of the CD. Moreover, the detailed knowledge of SB behavior around the fab working point is a must for future shrinks and for preparing the next technology nodes. SB are inserted in the generation of critical levels for STMicroelectronics 90 nm technology embedded memories before invoking the Model for Optical Proximity Corrections (MBOPC). This allows the software to calculate their contribution to the intensity in the aerial image and integrate their effects in Edge Proximity Error (EPE) corrections. However the Rule-Based insertion of these assist features still leaves behind occurrences of conflicting priorities as in the image below. (See manuscript PDF)Detection of Hot Spots in 2D simulations for die treatment validation (done on BRION equipment on each critical level before mask making) is in most cases correlated with SB singularities, at least for CD non-uniformity, bridging issues and necking in correspondence with OPC fragmentation effects. Within the framework of the MaXSSIMM project, we established a joint STMicroelectronics and Toppan Photomasks team to explore the influence of assist features (CD, distance), convex and concave corner rounding and CD uniformity by means of specific test patterns. The proposed study concerns the algorithms used to define the mask shop input as well as the physical mask etching. A set of test cases, based on elementary test patterns, each one including a list of geometrical variations, has been defined. As the number of configurations becomes rapidly very large (tens of thousands) we had to apply Design of Experiments (DOE) algorithms in order to reduce the number of measurements to a

  16. Wafer sub-layer impact in OPC/ORC models for 2x nm node implant layers

    NASA Astrophysics Data System (ADS)

    Le-Denmat, Jean-Christophe; Martinelli, Catherine; Sungauer, Elodie; Michel, Jean-Christophe; Yesilada, Emek; Robert, Frederic

    2013-04-01

    From 28nm technology node and below, Optical Proximity Correction (OPC) needs to take into account light scattering effects from prior layers when bottom anti-reflective coating (BARC) is not used, which is typical for implant layers. In this paper, we implement a sub-layer aware simulation method into a verification tool for Optical Rule Check (ORC) that is used on full 28nm test chip. The sub-layer aware verification can predict defects that are missed by standard ORC. SEM-CD review and defectivity analysis were used to confirm the validity of the sub-layer aware model on wafer.

  17. Direct strain measurement in a 65 nm node strained silicon transistor by convergent-beam electron diffraction

    SciTech Connect

    Zhang, Peng; Istratov, Andrei A.; Weber, Eicke R.; Kisielowski, Christian; He, Haifeng; Nelson, Chris; Spence, John C.H

    2006-01-01

    Using the energy-filtered convergent-beam electron diffraction !CBED" technique in a transmission electron microscope, the authors report here a direct measurement of the lattice parameters of uniaxially strained silicon as close as 25 nm below the gate in a 65 nm node p-type metal-oxide-semiconductor field-effect transistor with SiGe source and drain. It is found that the dominant strain component (0.58%) is compressive along the source-drain direction. The compressive stress is 1.1 GPa along this direction. These findings demonstrate that CBED can serve as a strain metrology technique for the development of strained silicon device technology

  18. Evaluation of KLA-Tencor LMS IPRO5 beta system for 22nm node registration and overlay applications

    NASA Astrophysics Data System (ADS)

    Ferber, M.; Laske, F.; Röth, K.-D.; Adam, D.

    2011-11-01

    Using various technical tricks, 193nm lithography has been pushed for the 22nm logic node. For optical and EUV lithography, the International Technology Roadmap for Semiconductors (ITRS [1]) requests a registration error below 3.8 nm for masks for single-patterning layers. Double patterning further reduces the tolerable pattern placement error to < 2.7 nm for each mask of a pair that forms one layer on the wafer. For mask metrology on the 2x node, maintaining a precision-to-tolerance (P/T) ratio of 0.25 will be challenging. The total measurement uncertainty has to be significantly below 1.0nm. In this work, results obtained during the LMS IPRO5 beta system evaluation are presented. LMS IPRO5 beta system evaluation is part of the CDUR32 project, funded by the German Federal Ministry of Education and Research. A major improvement to previous LMS IPRO generations is the new laser illumination system, which significantly improves optical resolution and contrast (especially on EUV substrates). Therefore, optical resolution and measurement capability are evaluated using standard registration targets, in-die wafer overlay targets, and arbitrary shaped features on different substrates comprising EUV and binary MoSi masks. Position measurement uncertainty for the new center of gravity (CofG) measurement algorithm, important for in-die measurement capability, is evaluated. The results are compared with results obtained using the traditional edge detection algorithm.

  19. Applications of AFM in semiconductor R&D and manufacturing at 45 nm technology node and beyond

    NASA Astrophysics Data System (ADS)

    Lee, Moon-Keun; Shin, Minjung; Bao, Tianming; Song, Chul-Gi; Dawson, Dean; Ihm, Dong-Chul; Ukraintsev, Vladimir

    2009-03-01

    Continuing demand for high performance microelectronic products propelled integrated circuit technology into 45 nm node and beyond. The shrinking device feature geometry created unprecedented challenges for dimension metrology in semiconductor manufacturing and research and development. Automated atomic force microscope (AFM) has been used to meet the challenge and characterize narrower lines, trenches and holes at 45nm technology node and beyond. AFM is indispensable metrology techniques capable of non-destructive full three-dimensional imaging, surface morphology characterization and accurate critical dimension (CD) measurements. While all available dimensional metrology techniques approach their limits, AFM continues to provide reliable information for development and control of processes in memory, logic, photomask, image sensor and data storage manufacturing. In this paper we review up-todate applications of automated AFM in every mentioned above semiconductor industry sector. To demonstrate benefits of AFM at 45 nm node and beyond we compare capability of automated AFM with established in-line and off-line metrologies like critical dimension scanning electron microscopy (CDSEM), optical scatterometry (OCD) and transmission electronic microscopy (TEM).

  20. Integration of e-beam direct write in BEOL processes of 28nm SRAM technology node using mix and match

    NASA Astrophysics Data System (ADS)

    Gutsch, Manuela; Choi, Kang-Hoon; Hanisch, Norbert; Hohle, Christoph; Seidel, Robert; Steidel, Katja; Thrun, Xaver; Werner, Thomas

    2014-10-01

    Many efforts were spent in the development of EUV technologies, but from a customer point of view EUV is still behind expectations. In parallel since years maskless lithography is included in the ITRS roadmap wherein multi electron beam direct patterning is considered as an alternative or complementary approach for patterning of advanced technology nodes. The process of multi beam exposures can be emulated by single beam technologies available in the field. While variable shape-beam direct writers are already used for niche applications, the integration capability of e-beam direct write at advanced nodes has not been proven, yet. In this study the e-beam lithography was implemented in the BEoL processes of the 28nm SRAM technology. Integrated 300mm wafers with a 28nm back-end of line (BEoL) stack from GLOBALFOUNDRIES, Dresden, were used for the experiments. For the patterning of the Metal layer a Mix and Match concept based on the sequence litho - etch - litho - etch (LELE) was developed and evaluated wherein several exposure fields were blanked out during the optical exposure. E-beam patterning results of BEoL Metal and Via layers are presented using a 50kV VISTEC SB3050DW variable shaped electron beam direct writer at Fraunhofer IPMS-CNT. Etch results are shown and compared to the POR. In summary we demonstrate the integration capability of EBDW into a productive CMOS process flow at the example of the 28nm SRAM technology node.

  1. Resist process control for 32-nm logic node and beyond with NA > 1.30 immersion exposure tool

    NASA Astrophysics Data System (ADS)

    Nagahara, Seiji; Takahata, Kazuhiro; Nakagawa, Seiji; Murakami, Takashi; Takeda, Kazuhiro; Nakamura, Shinpei; Ueki, Makoto; Satake, Masaki; Ema, Tatsuhiko; Fujise, Hiroharu; Yonemitsu, Hiroki; Seino, Yuriko; Nakagawa, Shinichiro; Asano, Masafumi; Kitamura, Yosuke; Uchiyama, Takayuki; Mimotogi, Shoji; Tominaga, Makoto

    2009-03-01

    Resist process challenges for 32-nm node and beyond are discussed in this paper. For line and space (L/S) logic patterns, we examine ways to balance the requirements of resolution-enhancement techniques (RETs). In 32-nm node logic patterning, two-dimensional (2D) layout pattern deformation becomes more severe with stronger RET (e.g., narrow angle CQUAD illumination). Also pattern collapse more frequently happens in 2D-pattern layouts when stronger RET is used. In contrast, milder RET (annular illumination) does not induce the severe pattern collapse in 2D-pattern layout. For 2D-pattern layouts, stronger RET seems to worsen image contrast and results in high background-light in the resist pattern, which induces more pattern collapse. For the minimum-pitch L/S pattern in 32-nm node logic, annular illumination is acceptable for patterning with NA1.35 scanner when high contrast resist is used. For contact/via patterns, it is necessary to expand the overlapping CD process window. Better process margin is realized through the combination of hole-shrink technique and precise acid-diffusion control in an ArF chemically amplified resist.

  2. Practical proof of CP element based design for 14nm node and beyond

    NASA Astrophysics Data System (ADS)

    Maruyama, Takashi; Takita, Hiroshi; Ikeno, Rimon; Osawa, Morimi; Kojima, Yoshinori; Sugatani, Shinji; Hoshino, Hiromi; Hino, Toshio; Ito, Masaru; Iizuka, Tetsuya; Komatsu, Satoshi; Ikeda, Makoto; Asada, Kunihiro

    2013-03-01

    To realize HVM (High Volume Manufacturing) with CP (Character Projection) based EBDW, the shot count reduction is the essential key. All device circuits should be composed with predefined character parts and we call this methodology "CP element based design". In our previous work, we presented following three concepts [2]. 1) Memory: We reported the prospects of affordability for the CP-stencil resource. 2) Logic cell: We adopted a multi-cell clustering approach in the physical synthesis. 3) Random interconnect: We proposed an ultra-regular layout scheme using fixed size wiring tiles containing repeated tracks and cutting points at the tile edges. In this paper, we will report the experimental proofs in these methodologies. In full chip layout, CP stencil resource management is critical key. From the MCC-POC (Proof of Concept) result [1], we assumed total available CP stencil resource as 9000um2. We should manage to layout all circuit macros within this restriction. Especially the issues in assignment of CP-stencil resource for the memory macros are the most important as they consume considerable degree of resource because of the various line-ups such as 1RW-, 2RW-SRAMs, Resister Files and ROM which require several varieties of large size peripheral circuits. Furthermore the memory macros typically take large area of more than 40% of die area in the forefront logic LSI products so that the shot count increase impact is serious. To realize CP-stencil resource saving we had constructed automatic CP analyzing system. We developed two types of extraction mode of simple division by block and layout repeatability recognition. By properly controlling these models based upon each peripheral circuit characteristics, we could minimize the consumption of CP stencil resources. The estimation for 14nm technology node had been performed based on the analysis of practical memory compiler. The required resource for memory macro is proved to be affordable value which is 60% of full

  3. Imaging study of positive and negative tone weak phase-shifted 65 nm node contacts

    NASA Astrophysics Data System (ADS)

    Beach, James V.; Petersen, John S.; Greenway, Robert T.; Maslow, Mark J.; MacDonald, Susan S.; Margolis, Lee H.; Hughes, Gregory P.

    2005-05-01

    CPL and aerial image mapping type contact designs for both negative and positive tones were created, built and tested for 100 nm and sub-100 nm contacts. Experimental results illustrated the need for electromagnetic-field corrections in the simulations. Resolution down to 80nm dense contacts were seen with both negative and positive resists with acceptable process windows though some process optimization is still required as unacceptable CD variation and a reentrant profile was observed. High MEEF requires strict CD control on the mask. Data volume for the isolated contact designs can also challenge the mask build.

  4. Extreme ultraviolet mask defect inspection with a half pitch 16-nm node using simulated projection electron microscope images

    NASA Astrophysics Data System (ADS)

    Iida, Susumu; Amano, Tsuyoshi; Hirano, Ryoichi; Terasawa, Tsuneo; Watanabe, Hidehiro

    2013-04-01

    According to an International Technology Roadmap for Semiconductors (ITRS-2012) update, the sensitivity requirement for an extreme ultraviolet (EUV) mask pattern inspection system is to be less than 18 nm for half pitch (hp) 16-nm node devices. The inspection sensitivity of extrusion and intrusion defects on hp 64-nm line-and-space patterned EUV mask were investigated using simulated projection electron microscope (PEM) images. The obtained defect images showed that the optimization of current density and image processing techniques were essential for the detection of defects. Extrusion and intrusion defects 16 nm in size were detected on images formed by 3000 electrons per pixel. The landing energy also greatly influenced the defect detection efficiency. These influences were different for extrusion and intrusion defects. These results were in good agreement with experimentally obtained yield curves of the mask materials and the elevation angles of the defects. These results suggest that the PEM technique has a potential to detect 16-nm size defects on an hp 64-nm patterned EUV mask.

  5. Scatterometry based 65nm node CDU analysis and prediction using novel reticle measurement technique

    NASA Astrophysics Data System (ADS)

    van Ingen Schenau, Koen; Vanoppen, Peter; van der Laan, Hans; Kiers, Ton; Janssen, Maurice

    2005-05-01

    Scatterometry was selected as CD metrology for the 65nm CDU system qualification. Because of the dominant reticle residuals component in the 65nm CD budget for dense lines, significant improvements in reticle CD metrology were required. SEM is an option but requires extensive measurements due to the scatterometry grating modules. Therefore a new technique was developed and called SERUM (Spot sensor Enabled Reticle Uniformity Measurements). It uses the on board exposure system metrology sensors to measure transmission that is converted to reticle CD. It has the advantage that an entire reticle is measured within two minutes with good repeatability. The reticle fingerprints correlate well to the SEM measurements. With the improvements in reticle CD metrology offered by SEM and SERUM the reticle residuals component no longer dominates the 65nm budget for CDU system qualification.

  6. DSA patterning options for FinFET formation at 7nm node

    NASA Astrophysics Data System (ADS)

    Liu, Chi-Chun C.; Franke, Elliott; Lie, Fee Li; Sieg, Stuart; Tsai, Hsinyu; Lai, Kafai; Truong, Hoa; Farrell, Richard; Somervell, Mark; Sanders, Daniel; Felix, Nelson; Guillorn, Michael; Burns, Sean; Hetzer, David; Ko, Akiteru; Arnold, John; Colburn, Matthew

    2016-03-01

    Several 27nm-pitch directed self-assembly (DSA) processes targeting fin formation for FinFET device fabrication are studied in a 300mm pilot line environment, including chemoepitaxy for a conventional Fin arrays, graphoepitaxy for a customization approach and a hybrid approach for self-aligned Fin cut. The trade-off between each DSA flow is discussed in terms of placement error, Fin CD/profile uniformity, and restricted design. Challenges in pattern transfer are observed and process optimization are discussed. Finally, silicon Fins with 100nm depth and on-target CD using different DSA options with either lithographic or self-aligned customization approach are demonstrated.

  7. Effects of Postetching Treatment on Molecular-Pore-Stacking/Cu Interconnects for 28 nm Node and Beyond

    NASA Astrophysics Data System (ADS)

    Oshida, Daisuke; Kume, Ippei; Katsuyama, Hirokazu; Taiji, Toshiji; Maruyama, Takuya; Ueki, Makoto; Inoue, Naoya; Iguchi, Manabu; Fujii, Kunihiro; Oda, Noriaki; Sakurai, Michio

    2011-05-01

    The effects of postetching treatment (PET) using carbon-containing gas on molecular-pore-stacking (MPS)/Cu interconnects were investigated. By using this technology, a 5% reduction in wiring capacitance was obtained as a result of the hardening of exposed MPS at the trench bottom. Via-chain yield improvement was also confirmed as a result of eliminating of etching residues in via-holes. These results indicate that high production yield and reliability can be obtained by PET for 28-nm-node complementary metal oxide semiconductor (CMOS) devices and beyond.

  8. Double patterning combined with shrink technique to extend ArF lithography for contact holes to 22nm node and beyond

    NASA Astrophysics Data System (ADS)

    Miao, Xiangqun; Huli, Lior; Chen, Hao; Xu, Xumou; Woo, Hyungje; Bencher, Chris; Shu, Jen; Ngai, Chris; Borst, Christopher

    2008-03-01

    Lithography becomes much more challenging when CD shrinks to 22nm nodes. Since EUV is not ready, double patterning combined with Resolution Enhancement Technology (RET) such as shrink techniques seems to be the most possible solution. Companies such as TSMC [1] and IBM [2] etc. are pushing out EUV to extend immersion ArF lithography to 32nm/22nm nodes. Last year, we presented our development work on 32nm node contact (50nm hole at 100nm pitch) using dry ArF lithography by double patterning with SAFIER shrink process[3]. To continue the work, we further extend our dry litho capability towards the 22nm node. We demonstrated double patterning capability of 40nm holes at 80nm pitch using ASML XT1400E scanner. It seems difficult to print pitches below 140nm on dry scanner in single exposure which is transferred into 70nm pitch with double patterning. To push the resolution to 22nm node and beyond, we developed ArF immersion process on ASML XT1700i-P system at the College of Nanoscale Science and Engineering (Albany, NY) combined with a SAFIER process. We achieved single exposure process capability of 25nm holes at 128nm pitch after shrink. It enables us to print ~25nm holes at pitch of 64nm with double patterning. Two types of hard mask (HM), i.e. TIN and a-Si were used in both dry and immersion ArF DP processes. The double patterning process consists of two HM litho-shrink-etch steps. The dense feature is designed into two complementary parts on two masks such that the density is reduced by half and minimum pitch is increased by at least a factor of 21/2 depending on design. The complete pattern is formed after the two HM litho-shrink-etch steps are finished.

  9. Photon flux requirements for EUV reticle imaging microscopy in the 22 and 16 nm nodes

    SciTech Connect

    Wintz, D.; Goldberg, K. A.; Mochi, I.; Huh, S.

    2010-03-12

    EUV-wavelength actinic microscopy yields detailed information about EUV mask patterns, architectures, defects, and the performance of defect repair strategies, without the complications of photoresist imaging. The measured aerial image intensity profiles provide valuable feedback to improve mask and lithography system modeling methods. In order to understand the photon-flux-dependent pattern measurement limits of EUV mask-imaging microscopy, we have investigated the effects of shot noise on aerial image linewidth measurements for lines in the 22 and 16-nm generations. Using a simple model of image formation near the resolution limit, we probe the influence of photon shot noise on the measured, apparent line roughness. With this methodology, we arrive at general flux density requirements independent of the specific EUV microscope configurations. Analytical and statistical analysis of aerial image simulations in the 22 and 16-nm generations reveal the trade-offs between photon energy density (controllable with exposure time), effective pixel dimension on the CCO (controlled by the microscope's magnification ratio), and image log slope (ILS). We find that shot-noise-induced linewidth roughness (LWR) varies imersely with the square root of the photon energy density, and is proportional to the imaging magnification ratio. While high magnification is necessary for adequate spatial resolution, for a given flux density, higher magnification ratios have diminishing benefits. With practical imaging parameters, we find that in order to achieve an LWR (3{sigma}) value of 5% of linewidth for dense, 88-nm mask features with 80% aerial image contrast and 13.5-nm effective pixel width (1000x magnification ratio), a peak photon flux of approximately 1400 photons per pixel per exposure is required.

  10. Process variation challenges and resolution in the negative-tone develop double patterning for 20nm and below technology node

    NASA Astrophysics Data System (ADS)

    Mehta, Sohan S.; Ganta, Lakshmi K.; Chauhan, Vikrant; Wu, Yixu; Singh, Sunil; Ann, Chia; Subramany, Lokesh; Higgins, Craig; Erenturk, Burcin; Srivastava, Ravi; Singh, Paramjit; Koh, Hui Peng; Cho, David

    2015-03-01

    Immersion based 20nm technology node and below becoming very challenging to chip designers, process and integration due to multiple patterning to integrate one design layer . Negative tone development (NTD) processes have been well accepted by industry experts for enabling technologies 20 nm and below. 193i double patterning is the technology solution for pitch down to 80 nm. This imposes tight control in critical dimension(CD) variation in double patterning where design patterns are decomposed in two different masks such as in litho-etch-litho etch (LELE). CD bimodality has been widely studied in LELE double patterning. A portion of CD tolerance budget is significantly consumed by variations in CD in double patterning. The objective of this work is to study the process variation challenges and resolution in the Negative Tone Develop Process for 20 nm and Below Technology Node. This paper describes the effect of dose slope on CD variation in negative tone develop LELE process. This effect becomes even more challenging with standalone NTD developer process due to q-time driven CD variation. We studied impact of different stacks with combination of binary and attenuated phase shift mask and estimated dose slope contribution individually from stack and mask type. Mask 3D simulation was carried out to understand theoretical aspect. In order to meet the minimum insulator requirement for the worst case on wafer the overlay and critical dimension uniformity (CDU) budget margins have slimmed. Besides the litho process and tool control using enhanced metrology feedback, the variation control has other dependencies too. Color balancing between the two masks in LELE is helpful in countering effects such as iso-dense bias, and pattern shifting. Dummy insertion and the improved decomposition techniques [2] using multiple lower priority constraints can help to a great extent. Innovative color aware routing techniques [3] can also help with achieving more uniform density and

  11. Process window analysis of algorithmic assist feature placement options at the 2X nm node DRAM

    NASA Astrophysics Data System (ADS)

    Jeon, Jinhyuck; Kim, Shinyoung; Song, Jookyoung; Park, Chanha; Yang, Hyunjo; Yim, Donggyu; Ward, Brian; Zhang, Yunqiang; Hooker, Kevin; Do, Munhoe; Choi, Jung-Hoe; Jang, Stephen

    2013-03-01

    As the industry pushes to ever more complex illumination schemes to increase resolution for next generation memory and logic circuits; subresolution assist feature (SRAF) placement requirements become increasingly severe. Therefore device manufacturers are evaluating improvements in SRAF placement algorithms which do not sacrifice main feature (MF) patterning capability. AF placement algorithms can be categorized broadly as either rule-based (RB), model-based (MB). However, combining these different algorithms into new integrated solutions may enable a more optimal overall solution. RBAF is the baseline AF placement method for many previous technology nodes. Although RBAF algorithm complexity limits its use with very extreme illumination, RBAF is still a powerful option in certain scenarios. One example is for repeating patterns in memory arrays. RBAF algorithms can be finely optimized and verified experimentally without the building of complex models. RBAF also guarantees AF placement consistency based only on the very local geometric environment, which is important in applications where consistent signal propagation is of critical importance. MBAF algorithms deliver the ability to reliably place assist features for enhanced process window control across a wide variety of layout feature configurations and aggressive illumination sources. These methods optimize sophisticated AF placement to improve main feature PW but without performing full main feature OPC. The flexibility of MBAF allows for efficient investigations of future technology nodes as the number of interactions between local layout features increases beyond what RBAF algorithms can effectively support Based on hybrid approach algorithms combining features of the different algorithms using both RBAF and MBAF methods, the generation and placement of SRAF can be a good alternative. Combining of two kinds of SRAF placement options might result in relatively improved process window compared to an

  12. Design verification for sub-70-nm DRAM nodes via metal fix using E-beam direct write

    NASA Astrophysics Data System (ADS)

    Keil, K.; Jaschinsky, P.; Hohle, C.; Choi, K.-H.; Schneider, R.; Tesauro, M.; Thrum, F.; Zimmermann, R.; Kretz, J.

    2009-01-01

    Because of mask cost reduction, electron beam direct write (EBDW) is implemented for special applications such as rapid prototyping or small volume production in semiconductor industry. One of the most promising applications for EBDW is design verification by means of metal fix. Due to write time constrains, Mix & Match solutions have to be developed at smaller nodes. This study reports on several Mix and Match processes for the integration of E-Beam lithography into the optical litho process flow of Qimonda's 70 nm and 58 nm DRAM nodes. Different metal layers have been patterned in part with DUV litho followed by E-Beam litho using a 50 kV Vistec SB3050 shaped electron beam direct writer. All hardmask patterns were then simultaneously transferred into the DRAM stack. After full chip processing a yield study comprising electrical device characterization and defect investigation was performed. We show detailed results including CD and OVL as well as improvements of the alignment mark recognition. The yield of the E-Beam processed chips was found to be within the range of wafer-to-wafer fluctuation of the POR hardware. We also report on metal fix by electrical cutting of selected diodes in large chip scales which usually cannot be accessed with FIB methods. In summary, we show the capability of EBDW for quick and flexible design verification.

  13. Evaluation of compact models for negative-tone development layers at 20/14nm nodes

    NASA Astrophysics Data System (ADS)

    Chen, Ao; Foong, Yee Mei; Zhang, Dong Qing; Zhang, Hongxin; Chung, Angeline; Fryer, David; Deng, Yunfei; Medvedev, Dmitry; Granik, Yuri

    2015-03-01

    With the introduction of negative tone develop (NTD) resists to production lithography nodes, multiple NTD resist modeling challenges have surpassed the accuracy limits of the existing modeling infrastructure developed for the positive polarity process. We report the evaluation of two NTD resist modeling algorithms. The new modeling terms represent, from the first principles, the NTD resist mechanisms of horizontal shrink and horizontal development bias. Horizontal shrink describes the impact of the physical process of out-gassing on remaining resist edge location. Horizontal development bias accounts for the differential in the peak and minimum development rate with exposure intensity observed in NTD formulations. We review specific patterning characteristics by feature type, modeling accuracy impact presented by these NTD mechanisms, and their description in our compact models (Compact Model 1, CM1). All the new terms complement the accuracy advantage observed with existing CM1 resist modeling infrastructure. The new terms were tested on various NTD layers. The results demonstrate consistent model accuracy improvement for both calibration and verification. Furthermore, typical NTD model fitting challenges, such as large SRAF-induced wafer CD jump, can be overcome by the new NTD terms. Finally, we propose a joint-tuning approach for the calibration of compact models for the NTD resist.

  14. Evaluation of lens heating effect in high transmission NTD processes at the 20nm technology node

    NASA Astrophysics Data System (ADS)

    Jeon, Bumhwan; Lee, Sam; Subramany, Lokesh; Li, Chen; Pal, Shyam; Meyers, Sheldon; Mehta, Sohan; Wei, Yayi; Cho, David R.

    2014-04-01

    The NTD (Negative Tone Developer) process has been embraced as a viable alternative to traditionally, more conventional, positive tone develop processes. Advanced technology nodes have necessitated the adopting of NTD processes to achieve such tight design specifications in critical dimensions. Dark field contact layers are prime candidates for NTD processing due to its high imaging contrast. However, reticles used in NTD processes are highly transparent. The transmission rate of those masks can be over 85%. Consequently, lens heating effects result in a non-trivial impact that can limit NTD usability in a high volume mass production environment. At the same time, Source Mask Optimized (SMO) freeform pupils have become popular. This can also result in untoward lens heating effects which are localized in the lens. This can result in a unique drift behavior with each Zernike throughout the exposing of wafers. In this paper, we present our experience and lessons learned from lens heating with NTD processes. The results of this study indicate that lens heating makes impact on drift behavior of each Zernike during exposure while source pupil shape make an impact on the amplitude of Zernike drift. Existing lens models should be finely tuned to establish the correct compensation for drift. Computational modeling for lens heating can be considered as one of these opportunities. Pattern shapes, such as dense and iso pattern, can have different drift behavior during lens heating.

  15. Crossing the Resolution Limit in Near-Infrared Imaging of Silicon Chips: Targeting 10-nm Node Technology

    NASA Astrophysics Data System (ADS)

    Agarwal, Krishna; Chen, Rui; Koh, Lian Ser; Sheppard, Colin J. R.; Chen, Xudong

    2015-04-01

    The best reported resolution in optical failure analysis of silicon chips is 120-nm half pitch demonstrated by Semicaps Private Limited, whereas the current and future industry requirement for 10-nm node technology is 100-nm half pitch. We show the first experimental evidence for resolution of features with 100-nm half pitch buried in silicon (λ /10.6 ), thus fulfilling the industry requirement. These results are obtained using near-infrared reflection-mode imaging using a solid immersion lens. The key novel feature of our approach is the choice of an appropriately sized collection pinhole. Although it is usually understood that, in general, resolution is improved by using the smallest pinhole consistent with an adequate signal level, it is found that in practice for silicon chips there is an optimum pinhole size, determined by the generation of induced currents in the sample. In failure analysis of silicon chips, nondestructive imaging is important to avoid disturbing the functionality of integrated circuits. High-resolution imaging techniques like SEM or TEM require the transistors to be exposed destructively. Optical microscopy techniques may be used, but silicon is opaque in the visible spectrum, mandating the use of near-infrared light and thus poor resolution in conventional optical microscopy. We expect our result to change the way semiconductor failure analysis is performed.

  16. Calibration of CD mask standards for the 65-nm node: CoG and MoSi

    NASA Astrophysics Data System (ADS)

    Richter, J.; Heins, T.; Liebe, R.; Bodermann, B.; Diener, A.; Bergmann, D.; Frase, C. G.; Bosse, H.

    2007-02-01

    We report on the traceable calibration of linewidth (CD) photomask standards which are used as reference standards for production masks of the 65 nm node. Two different types of masks with identical layout were produced and calibrated, namely a binary mask (CoG) and a half-tone phase shifting mask (193MoSi PSM). We will in particular describe the applied calibration procedures and cross-correlate the results from different high resolution metrology tools, like SEM, UV microscopy and AFM. The layout of the CD photomask standard contains isolated as well as dense line features in both tones with nominal CD down to 100 nm. Calibration of the standards was performed at PTB by UV microscopy and LV-SEM, supported by additional AFM measurements. For analysis of the measured high resolution microscopy images and the deduced profiles appropriate signal modeling was applied for every metrology tool, which allows a meaningful comparison of geometrical parameters of the measured calibration structures. By this approach, e.g. the deduced feature widths at the top of the structures and the widths at 50% height of the structures can be related to the measured edge angles. The linearity e. g. of the measured top CD on different type of structures on the CoG CD standard was determined to be below 5 nm down to line feature dimensions well below 200 nm.

  17. Message to the undecided: using DUV dBARC for 32 nm node implants

    NASA Astrophysics Data System (ADS)

    Lee, Hyung-Rae; Popova, Irene Y.; Rolick, JoAnn M.; Gomez, Juan-Manuel; Bailey, Todd C.

    2009-03-01

    In recent years, implant (block) level lithography has been transformed from being widely viewed as non-critical into one of the forefronts of material development. Ever-increasing list of substrates, coatings and films in the underlying stack clearly dictates the need for new materials and increased attention to this challenging area. Control of the substrate reflectivity and critical dimension (CD) on topography has become one of the key challenges for block level lithography and is required in order to meet their aggressive requirements for developing 32nm technology and beyond. The simulation results of wet-developable bottom anti-reflective coating (dBARC) show better reflectivity control on topography than the conventional top anti-reflective materials (TARCs), and make a convincing statement as to viability of dBARC as a working solution for block level lithography.1 Wet-developable BARC by definition offers substrate reflectivity and resist adhesion control, however there is a need to better understand the fundamental limitations of the dBARC process in comparison to the TARC process. In addition, some specific niche dBARC applications as facilitating adhesion to challenging substrates, such as capping layers in the high-k metal gate (HK/MG) stack, can also be envisioned as most imminent dBARC applications.2 However, most of the engineering community is still indecisive to use dBARC in production, bound by uncertainties of the robustness and lack of experience using dBARC in production. This work is designed to inspire more confidence in the potential use of this technology. Its objective is to describe testing of one of dBARC materials, which is not a photosensitive type, and its implementation on 32nm logic devices. The comparison between dBARC and TARC processes evaluates impacts of dBARC use in the lithographic process, with special attention to OPC behavior and reflectivity for controlling CD uniformity. This work also shows advantages and future

  18. Impact of EUV patterning scenario on different design styles and their ground rules for 7nm/5nm node BEOL layers

    NASA Astrophysics Data System (ADS)

    Chiou, Tsann-Bim; Chen, Alek C.; Dusa, Mircea; Tseng, Shih-En

    2016-03-01

    As the IC industry moves forward to 7nm or 5nm node, the minimum pitch of back-end-of-line (BEOL) layers could be near 30nm. Extreme ultraviolet (EUV) could be the most cost effective solution for patterning critical metal and via layers. Patterning of the critical layers would need greater than 4x exposures using ArFi lithography, leading to severe cost and yield issues. There are two potential design options, one-dimension (1D) and two-dimension (2D), for metal 1 layer. EUV's single exposure option offers superior image quality especially for the 2D design style, but scalability of a 2D design is limited by EUV with a fixed numerical aperture (NA). The single exposure of EUV is an appropriate patterning solution for printing a 1D design directly, but maintaining critical dimension uniformity (CDU) of lines and line-ends is a challenge. Scalability of the 1D design is also limited by the single exposure option. The 1D design can be patterned through a spacer film deposition to gain superior line CD control, followed by printing a cut or block pattern to create the line-ends. Since the minimum pitch of cut/block patterns is generally larger than the metal pitch, EUV's single exposure option has a potential to print the cut/block pattern at smaller pitch and resolution and offers an opportunity to further design shrink. An elongated via design helps design scalability due to an insensitive overlay error contribution to via-to-metal contact area and encroachment.

  19. Improving inspectability of sub-2x-nm node masks with complex SRAF

    NASA Astrophysics Data System (ADS)

    Kang, In Yong; Yoon, Gisung; Lee, Jonghee; Chung, Donghoon Paul; Kim, Byung-Gook; Jeon, Chan-Uk; Inderhees, Gregg; Hutchinson, Trent; Cho, Wonil; Hur, Jiuk

    2013-10-01

    As Moore's Law continues its relentless march toward ever smaller geometries on wafer, lithographers who had been relying on the implementation of a solution using EUV lithography are faced with increasing challenges to meet requirements for printing sub-2x nm half-pitch (HP). The available choices rely on 193 nm DUV immersion lithography, but with decreasing k1 values and thus shrinking process windows. To overcome these limitations, two techniques such as inverse lithography technology (ILT) and source mask optimization (SMO) were introduced by computational OPC scheme. From a mask inspection viewpoint, the impact of both ILT and SMO is similar - both result in photomasks that have a large quantity of sub-resolution assist features (SRAFs). These SRAFs are challenging for mask-makers to pattern with high fidelity and accuracy across a full-field mask, and thus mask inspection is challenged to maintain a high sensitivity level on primary mask features while not suffering from a high nuisance detection rate on the SRAF features. To solve this particular issue, new inspection approach was developed by using computational image calibration based wafer scanner simulation. This paper will be described the new capabilities, which analyzes the aerial image to differentiate between printing and non-printing features, and applying the appropriate sensitivity threshold. All analysis will be shown comparing results with and without the new capabilities, with an emphasis on inspectability improvements and nuisance defect reduction to improve mask cycle time.

  20. Performance of immersion lithography for 45-nm-node CMOS and ultra-high density SRAM with 0.25um2

    NASA Astrophysics Data System (ADS)

    Mimotogi, Shoji; Uesawa, Fumikatsu; Tominaga, Makoto; Fujise, Hiroharu; Sho, Koutaro; Katsumata, Mikio; Hane, Hiroki; Ikegami, Atsushi; Nagahara, Seiji; Ema, Tatsuhiko; Asano, Masafumi; Kanai, Hideki; Kimura, Taiki; Iwai, Masaaki

    2007-03-01

    Immersion lithography was applied to 45nm node logic and 0.25um2 ultra-high density SRAM. The predictable enhancement of focus margin and resolution were obtained for all levels which were exposed by immersion tool. In particular, the immersion lithography enabled to apply the attenuating phase shift mask to the gate level. The enough lithography margin for the alternating phase shift mask was also obtained by using not only immersion tool but also dry tool for gate level. The immersion lithography shrunk the minimum hole pitch from 160nm to 140nm. Thus, the design rule for 45nm node became available by using immersion lithography.

  1. Performance and manufacturability trade-offs of pattern minimization for sub-22nm technology nodes

    NASA Astrophysics Data System (ADS)

    Rovner, Vyacheslav V.; Jhaveri, Tejas; Morris, Daniel; Strojwas, Andrzej; Pileggi, Larry

    2011-04-01

    The traditional design rule paradigm of defining the illegal areas of the design space has been deteriorating at the advanced technology nodes. Radical design space restrictions, advocated by the regular design fabrics methodology, provide an opportunity to reshape the design/manufacturing interface by constraining the layout to a set of allowable patterns. As such, this would allow for guaranteed convergence of the source mask optimization techniques (SMO) and complete validation of the legal design space during technology development and ramp. However, the number of the unique patterns generated by the layout adhering to even the simplistic gridded design rules prohibits this approach. Nevertheless, we have found that just 10% of the unique geometric patterns are sufficient to represent 90% of all layout pattern instances. Furthermore, the overall number of layout patterns on Active, Contact, and Metal-1 design layers can be reduced through modification of existing layout shapes in the final layout database and insertion of non-essential layout features. Unlike the 'dummy fill' used for chemical mechanical polishing (CMP), the newly added shapes must resemble the patterning of the functional design features and be inserted in close proximity to them. In this paper, we evaluate the digital circuit performance impact of the additional layout parasitics introduced by these 'dummy' features. In particular, we have found that a significant pattern count reduction can be achieved with minimal performance penalty. These results have been used at PDF Solutions to enable a correct by construction layout style, such as the templates and connectors-based layout methodology presented in the companion paper.

  2. Electromagnetic field modeling for defect detection in 7 nm node patterned wafers

    NASA Astrophysics Data System (ADS)

    Zhu, Jinlong; Zhang, Kedi; Davoudzadeh, Nima; Wang, Xiaozhen; Goddard, Lynford L.

    2016-03-01

    By 2017, the critical dimension in patterned wafers will shrink down to 7 nm, which brings great challenges to optics-based defect inspection techniques, due to the ever-decreasing signal to noise ratio with respect to defect size. To continue pushing forward the optics-based metrology technique, it is of great importance to analyze the full characteristics of the scattering field of a wafer with a defect and then to find the most sensitive signal type. In this article, the vector boundary element method is firstly introduced to calculate the scattering field of a patterned wafer at a specific objective plane, after which a vector imaging theory is introduced to calculate the field at an image plane for an imaging system with a high numerical aperture objective lens. The above methods enable the effective modeling of the image for an arbitrary vectorial scattering electromagnetic field coming from the defect pattern of the wafer.

  3. Particle control challenges in process chemicals and ultra-pure water for sub-10nm technology nodes

    NASA Astrophysics Data System (ADS)

    Rastegar, Abbas; Samayoa, Martin; House, Matthew; Kurtuldu, Hüseyin; Eah, Sang-Kee; Morse, Lauren; Harris-Jones, Jenah

    2014-04-01

    Particle contamination in ultra-pure water (UPW) and chemicals will eventually end up on the surface of a wafer and may result in killer defects. To improve the semiconductor processing yield in sub-10 nm half pitch nodes, it is necessary to control particle defectivity. In a systematic study of all major techniques for particle detection, counting, and sizing in solutions, we have shown that there is a gap in the required particle metrology which needs to be addressed by the industry. To reduce particles in solutions and improve filter retention for sub-10 nm particles with very low densities (<10 particles/mL), liquid particle counters that are able to detect small particles at low densities are required. Non-volatile residues in chemicals and UPW can result in nanoparticles. Measuring absolute non-volatile residues in UPW with concentrations in the ppb range is a challenge. However, by using energy-dispersive spectroscopy (EDS) analysis through transmission electron microscopy (TEM) of non-volatile residues we found silica both in dissolved and colloidal particle form which is present in one of the cleanest UPW that we tested. A particle capture/release technique was developed at SEMATECH which is able to collect particles from UPW and release them in a controlled manner. Using this system we showed sub-10 nm particles are present in UPW. In addition to colloidal silica, agglomerated carbon containing particles were also found in UPW.

  4. Advances with the new AIMS fab 193 2nd generation: a system for the 65 nm node including immersion

    NASA Astrophysics Data System (ADS)

    Zibold, Axel M.; Poortinga, E.; Doornmalen, H. v.; Schmid, R.; Scherubl, T.; Harnisch, W.

    2005-06-01

    The Aerial Image Measurement System, AIMS, for 193nm lithography emulation is established as a standard for the rapid prediction of wafer printability for critical structures including dense patterns and defects or repairs on masks. The main benefit of AIMS is to save expensive image qualification consisting of test wafer exposures followed by wafer CD-SEM resist or wafer analysis. By adjustment of numerical aperture (NA), illumination type and partial coherence (σ) to match any given stepper/ scanner, AIMS predicts the printability of 193nm reticles such as binary with, or without OPC and phase shifting. A new AIMS fab 193 second generation system with a maximum NA of 0.93 is now available. Improvements in field uniformity, stability over time, measurement automation and higher throughput meet the challenging requirements of the 65nm node. A new function, "Global CD Map" can be applied to automatically measure and analyse the global CD uniformity of repeating structures across a reticle. With the options of extended depth-of-focus (EDOF) software and the upcoming linear polarisation capability in the illumination the new AIMS fab 193 second generation system is able to cover both dry and immersion requirements for NA < 1. Rigorous simulations have been performed to study the effects of polarisation for imaging by comparing the aerial image of the AIMS to the resist image of the scanner.

  5. Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

    SciTech Connect

    Yin, Lan; Harburg, Daniel V.; Rogers, John A.; Bozler, Carl; Omenetto, Fiorenzo

    2015-01-05

    Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

  6. Study of alternative capping and absorber layers for extreme ultraviolet (EUV) masks for sub-16nm half-pitch nodes

    NASA Astrophysics Data System (ADS)

    Rastegar, Abbas; House, Matthew; Tian, Ruahi; Laursen, Thomas; Antohe, Alin; Kearney, Patrick

    2014-04-01

    Multiple challenges, including the availability of a reliable high power source, defect free mask, and proper resist material, have forced extreme ultraviolet (EUV) lithography to be considered for sub-10 nm half-pitch nodes. Therefore, techniques such as phase shift masks (PSMs) or high numerical aperture (NA) lithography might be considered. Such techniques require thin EUV absorber materials to be optimized to reduce EUV mask shadowing effects. Despite the challenges in dry etching of Ni and finding proper chemistries with a high etch selectivity to suitable capping materials, we decided to examine the chemical stability of Ni for existing mask cleaning chemistries. Ni, after Ag, has the highest absorption in EUV light at λ = 13.5 nm, which makes it a proper candidate—in pure form or in mixing with other elements—for thin absorber film. Depending on the composition of the final material, proper integration schemes will be developed. We studied Ni stability in commonly used mask cleaning processes based on ammonium hydroxide/ hydrogen peroxide (APM) and water mixtures. Ni films deposited with an ion beam deposition technique with a thickness of 35 nm are sufficient to totally absorb EUV light at λ = 13.5 nm. Multiple cleanings of these Ni films resulted in Ni oxidation— confirmed by time-of-flight secondary ion mass spectroscopy (TOF-SIMS) analysis as NiO with thickness about 1.5 nm. Furthermore, Ni oxidation processes are self-limiting and oxide layer thickness did not increase with a further cleaning. A three minute exposure to sulfuric acid/hydrogen peroxide mixture (SPM) can remove NiO and Ni totally. To protect Ni film from etching by SPM chemistry a 3 nm Si capping was used on top of Ni film. However, Si capping was removed by APM chemistry and could not protect Ni film against SPM chemistry. TiO2 may be a very good capping layer for EUV optics but it is not suitable for EUV mask blanks and will be removed by APM chemistries.

  7. Evaluation of soft error rates using nuclear probes in bulk and SOI SRAMs with a technology node of 90 nm

    NASA Astrophysics Data System (ADS)

    Abo, Satoshi; Masuda, Naoyuki; Wakaya, Fujio; Onoda, Shinobu; Hirao, Toshio; Ohshima, Takeshi; Iwamatsu, Toshiaki; Takai, Mikio

    2010-06-01

    The difference of soft error rates (SERs) in conventional bulk Si and silicon-on-insulator (SOI) static random access memories (SRAMs) with a technology node of 90 nm has been investigated by helium ion probes with energies ranging from 0.8 to 6.0 MeV and a dose of 75 ions/μm 2. The SERs in the SOI SRAM were also investigated by oxygen ion probes with energies ranging from 9.0 to 18.0 MeV and doses of 0.14-0.76 ions/μm 2. The soft error in the bulk and SOI SRAMs occurred by helium ion irradiation with energies at and above 1.95 and 2.10 MeV, respectively. The SER in the bulk SRAM saturated with ion energies at and above 2.5 MeV. The SER in the SOI SRAM became the highest by helium ion irradiation at 2.5 MeV and drastically decreased with increasing the ion energies above 2.5 MeV, in which helium ions at this energy range generated the maximum amount of excess charge carriers in a SOI body. The soft errors occurred by helium ions were induced by a floating body effect due to generated excess charge carriers in the channel regions. The soft error occurred by oxygen ion irradiation with energies at and above 10.5 MeV in the SOI SRAM. The SER in the SOI SRAM gradually increased with energies from 10.5 to 13.5 MeV and saturated at 18 MeV, in which the amount of charge carriers induced by oxygen ions in this energy range gradually increased. The computer calculation indicated that the oxygen ions with energies above 13.0 MeV generated more excess charge carriers than the critical charge of the 90 nm node SOI SRAM with the designed over-layer thickness. The soft errors, occurred by oxygen ions with energies at and below 12.5 MeV, were induced by a floating body effect due to the generated excess charge carriers in the channel regions and those with energies at and above 13.0 MeV were induced by both the floating body effect and generated excess carriers. The difference of the threshold energy of the oxygen ions between the experiment and the computer calculation might

  8. Hybrid Metrology and 3D-AFM Enhancement for CD Metrology Dedicated to 28 nm Node and Below Requirements

    SciTech Connect

    Foucher, J.; Faurie, P.; Dourthe, L.

    2011-11-10

    The measurement accuracy is becoming one of the major components that have to be controlled in order to guarantee sufficient production yield. Already at the R and D level, we have to come up with the accurate measurements of sub-40 nm dense trenches and contact holes coming from 193 immersion lithography or E-Beam lithography. Current production CD (Critical Dimension) metrology techniques such as CD-SEM (CD-Scanning Electron Microscope) and OCD (Optical Critical Dimension) are limited in relative accuracy for various reasons (i.e electron proximity effect, outputs parameters correlation, stack influence, electron interaction with materials...). Therefore, time for R and D is increasing, process windows degrade and finally production yield can decrease because you cannot manufactured correctly if you are unable to measure correctly. A new high volume manufacturing (HVM) CD metrology solution has to be found in order to improve the relative accuracy of production environment otherwise current CD Metrology solution will very soon get out of steam.In this paper, we will present a potential Hybrid CD metrology solution that smartly tuned 3D-AFM (3D-Atomic Force Microscope) and CD-SEM data in order to add accuracy both in R and D and production. The final goal for 'chip makers' is to improve yield and save R and D and production costs through real-time feedback loop implement on CD metrology routines. Such solution can be implemented and extended to any kind of CD metrology solution. In a 2{sup nd} part we will discuss and present results regarding a new AFM3D probes breakthrough with the introduction of full carbon tips made will E-Beam Deposition process. The goal is to overcome the current limitations of conventional flared silicon tips which are definitely not suitable for sub-32 nm nodes production.

  9. Hybrid Metrology & 3D-AFM Enhancement for CD Metrology Dedicated to 28 nm Node and Below Requirements

    NASA Astrophysics Data System (ADS)

    Foucher, J.; Faurie, P.; Dourthe, L.; Irmer, B.; Penzkofer, C.

    2011-11-01

    The measurement accuracy is becoming one of the major components that have to be controlled in order to guarantee sufficient production yield. Already at the R&D level, we have to come up with the accurate measurements of sub-40 nm dense trenches and contact holes coming from 193 immersion lithography or E-Beam lithography. Current production CD (Critical Dimension) metrology techniques such as CD-SEM (CD-Scanning Electron Microscope) and OCD (Optical Critical Dimension) are limited in relative accuracy for various reasons (i.e electron proximity effect, outputs parameters correlation, stack influence, electron interaction with materials…). Therefore, time for R&D is increasing, process windows degrade and finally production yield can decrease because you cannot manufactured correctly if you are unable to measure correctly. A new high volume manufacturing (HVM) CD metrology solution has to be found in order to improve the relative accuracy of production environment otherwise current CD Metrology solution will very soon get out of steam. In this paper, we will present a potential Hybrid CD metrology solution that smartly tuned 3D-AFM (3D-Atomic Force Microscope) and CD-SEM data in order to add accuracy both in R&D and production. The final goal for "chip makers" is to improve yield and save R&D and production costs through real-time feedback loop implement on CD metrology routines. Such solution can be implemented and extended to any kind of CD metrology solution. In a 2nd part we will discuss and present results regarding a new AFM3D probes breakthrough with the introduction of full carbon tips made will E-Beam Deposition process. The goal is to overcome the current limitations of conventional flared silicon tips which are definitely not suitable for sub-32 nm nodes production.

  10. Patterning process exploration of metal 1 layer in 7nm node with 3D patterning flow simulations

    NASA Astrophysics Data System (ADS)

    Gao, Weimin; Ciofi, Ivan; Saad, Yves; Matagne, Philippe; Bachmann, Michael; Oulmane, Mohamed; Gillijns, Werner; Lucas, Kevin; Demmerle, Wolfgang; Schmoeller, Thomas

    2015-03-01

    In 7mn node (N7), the logic design requires the critical poly pitch (CPP) of 42-45nm and metal 1 (M1) pitch of 28- 32nm. Such high pattern density pushes the 193 immersion lithography solution toward its limit and also brings extremely complex patterning scenarios. The N7 M1 layer may require a self-aligned quadruple patterning (SAQP) with triple litho-etch (LE3) block process. Therefore, the whole patterning process flow requires multiple exposure+etch+deposition processes and each step introduces a particular impact on the pattern profiles and the topography. In this study, we have successfully integrated a simulation tool that enables emulation of the whole patterning flow with realistic process-dependent 3D profile and topology. We use this tool to study the patterning process variations of N7 M1 layer including the overlay control, the critical dimension uniformity (CDU) budget and the lithographic process window (PW). The resulting 3D pattern structure can be used to optimize the process flow, verify design rules, extract parasitics, and most importantly, simulate the electric field and identify hot spots for dielectric reliability. As an example application, we will report extractions of maximum electric field at M1 tipto- tip which is one of the most critical patterning locations and we will demonstrate the potential of this approach for investigating the impact of process variations on dielectric reliability. We will also present simulations of an alternative M1 patterning flow, with a single exposure block using extreme ultraviolet lithography (EUVL) and analyze its advantages compared to the LE3 block approach.

  11. Nanoscale dimensional focused ion beam repair of quartz defects on 90-nm node alternating aperture phase shift masks

    NASA Astrophysics Data System (ADS)

    Robinson, Tod E.; Graupera, Anthony; Morrison, Troy B.; Ramstein, Marcus

    2004-08-01

    The effort to produce perfect dimension repairs of quartz bump defects on Alternating-Aperture Phase Shift Masks (AAPSM) has been brought to a new level with process developments to meet 90 nm technology node specifications. Decreasing photomask line and space dimensions pushes performance requirements for a mask repair system in terms of fine control in difficult to access structures on the mask surface. New repair strategies using a recently improved focused ion beam mask repair system for different defect types are discussed, along with their relative effectiveness. These strategies are then applied to the repair of full height extension and bridging defects in a line and space array. The role of quartz topography and its optical effects, Cr edge bias, and the combination of both strategies in a quartz bump repair are discussed. Additionally, effective process controls in repair are also discussed, along with analysis of metrology data received from a stylus nano-profilometer (SNP) system, and their relationship to potential imaging on the wafer by examination of AIMS data at a high numerical aperture. Several possible mask repair process flows are also reviewed in light of this work.

  12. Defect window analysis by using SEM-contour based shape quantifying method for sub-20nm node production

    NASA Astrophysics Data System (ADS)

    Hibino, Daisuke; Hsu, Mingyi; Shindo, Hiroyuki; Izawa, Masayuki; Enomoto, Yuji; Lin, J. F.; Hu, J. R.

    2013-04-01

    The impact on yield loss due to systematic defect which remains after Optical Proximity Correction (OPC) modeling has increased, and achieving an acceptable yield has become more difficult in the leading technology beyond 20 nm node production. Furthermore Process-Window has become narrow because of the complexity of IC design and less process margin. In the past, the systematic defects have been inspected by human-eyes. However the judgment by human-eyes is sometime unstable and not accurate. Moreover an enormous amount of time and labor will have to be expended on the one-by-one judgment for several thousands of hot-spot defects. In order to overcome these difficulties and improve the yield and manufacturability, the automated system, which can quantify the shape difference with high accuracy and speed, is needed. Inspection points could be increased for getting higher yield, if the automated system achieves our goal. Defect Window Analysis (DWA) system by using high-precision-contour extraction from SEM image on real silicon and quantifying method which can calculate the difference between defect pattern and non-defect pattern automatically, which was developed by Hitachi High-Technologies, has been applied to the defect judgment instead of the judgment by human-eyes. The DWA result which describes process behavior might be feedback to design or OPC or mask. This new methodology and evaluation results will be presented in detail in this paper.

  13. Optimization of chemically amplified resist for high-volume manufacturing by electron-beam direct writing toward 14nm node and beyond

    NASA Astrophysics Data System (ADS)

    Kon, Jun-ichi; Maruyama, Takashi; Kojima, Yoshinori; Takahashi, Yasushi; Sugatani, Shinji; Ogino, Kozo; Hoshino, Hiromi; Isobe, Hideaki; Kurokawa, Masaki; Yamada, Akio

    2012-03-01

    We investigated a high-resolution chemically amplified resist for introducing a multi-column cell electron-beam directwriting system into the manufacturing of sub-14 nm technology node LSIs. The target of total blur, which leads to an exposure latitude above 10%, is less than 13.6 nm for 14 nm logic node LSIs. We divided the total blur into three terms, forward-scattering, electron-beam and resist. At a 40 nm-thick resist, the forward-scattering blur was calculated as 1.0 nm in lithography simulation, and beam blur was estimated to be 7.1 nm from the patterning results of hydrogen silsesquioxane. We found that there is a proportional relation between resist blur and acid diffusion length by using a new evaluation method that uses a water-soluble polymer. By applying a chemically amplified resist with a short acid diffusion length, resist blur decreased to 14.5 nm. Even though total blur is still 16.2 nm, we have already succeeded in resolving 20 nm line and space patterns at an exposure dose of 79.6 μC/cm2.

  14. Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology

    NASA Astrophysics Data System (ADS)

    Wang, Guilei; Abedin, Ahmad; Moeen, Mahdi; Kolahdouz, Mohammadreza; Luo, Jun; Guo, Yiluan; Chen, Tao; Yin, Huaxiang; Zhu, Huilong; Li, Junfeng; Zhao, Chao; Radamson, Henry H.

    2015-01-01

    SiGe has been widely used as stressors in source/drain (S/D) regions of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) to enhance the channel mobility. In this study, selectively grown Si1-xGex (0.33 ⩽ x ⩽ 0.35) with boron concentration of 1 × 1020 cm-3 was used to elevate the S/D regions on bulk FinFETs in 14 nm technology node. The epitaxial quality of SiGe layers, SiGe profile and the strain amount of the SiGe layers were investigated. In order to in-situ clean the Si-fins before SiGe epitaxy, a series of prebaking experiments at temperature ranging from 740 to 825 °C were performed. The results showed that the thermal budget needs to be limited to 780-800 °C in order to avoid any damage to the shape of Si-fins but to remove the native oxide which is essential for high epitaxial quality. In this study, a kinetic gas model was also applied to predict the SiGe growth profile on Si-fins with trapezoidal shape. The input parameters for the model include growth temperature, partial pressures of reactant gases and the chip layout. By knowing the epitaxial profile, the strain to the Si-fins exerted by SiGe layers can be calculated. This is important in understanding the carrier transport in the FinFETs. The other benefit of the modeling is that it provides a cost-effective alternative for epitaxy process development as the SiGe profile can be readily predicted for any chip layout in advance.

  15. Printing the metal and contact layers for the 32- and 22-nm node: comparing positive and negative tone development process

    NASA Astrophysics Data System (ADS)

    Van Look, L.; Bekaert, J.; Truffert, V.; Wiaux, V.; Lazzarino, F.; Maenhoudt, M.; Vandenberghe, G.; Reybrouck, Mario; Tarutani, Shinji

    2010-04-01

    A strong demand exists for techniques that can further extend the application of ArF immersion lithography. Besides techniques like litho-friendly design, dual exposure or patterning schemes, customized illumination modes, also alternative processing schemes are viable candidates to reach this goal. One of the most promising alternative process flows uses image reversal by means of a negative tone development (NTD) step with a FUJIFILM solvent-based developer. Traditionally, the printing of contacts and trenches is done by using a dark field mask in combination with positive tone resist and positive tone development. With NTD, the same features can be printed in positive resist using a light field mask, and consequently with a much better image contrast. In this paper, we present an overview of applications for the NTD technique, both for trench and contact patterning, comparing the NTD performance to that of the traditional positive tone development (PTD). This experimental work was performed on an ASML Twinscan XT:1900i scanner at 1.35 NA, and targets the contact/metal layers of the 32 & 22 nm node. For contact hole printing, we consider both single and dual exposure schemes for regular arrays and 2D patterns. For trench printing, we compare the NTD and PTD performance for one-dimensional patterns, line ends and twodimensional structures. We also assess the etch capability and CDU performance of the NTD process. This experimental study proves the added value of the NTD scheme. For contacts and trenches, it allows achieving a broader pitch range and/or smaller litho targets, which makes this process flow attractive for the most advanced lithography applications, including double patterning.

  16. Study of device mass production capability of the character projection based electron beam direct writing process technology toward 14 nm node and beyond

    NASA Astrophysics Data System (ADS)

    Kojima, Yoshinori; Takahashi, Yasushi; Takakuwa, Masaki; Ohshio, Shuzo; Sugatani, Shinji; Tujimura, Ryo; Takita, Hiroshi; Ogino, Kozo; Hoshino, Hiromi; Ito, Yoshio; Miyajima, Masaaki; Kon, Jun-ichi

    2012-03-01

    Techniques to appropriately control the key factors for a character projection (CP) based electron beam direct writing (EBDW) technology for mass production are shown and discussed. In order to achieve accurate CD control, the CP technique using the master CP is adopted. Another CP technique, the Packed CP, is used to obtain suitable shot count. For the alignment on the some critical layers which have the normally an even surface, the alignment methodology differ from photolithography is required. The process that etches the SiO2 material in the shallow trench isolation is added and then the alignment marks can be detected using electron beam even at the gate layer, which is normally on an even surface. The proximity effect correction using the simplified electron energy flux model and the hybrid exposure are used to obtain enough process margins. As a result, the sufficient CD accuracy, overlay accuracy, and yield are obtained on the 65 nm node device. The condition in our system is checked using self-diagnosis on a regular basis, and scheduled maintenances have been properly performed. Due to the proper system control, more than 10,000 production wafers have been successfully exposed so far without any major system downtime. It is shown that those techniques can be adapted to the 32 nm node production with slight modifications. For the 14 nm node and beyond, however, the drastic increment of the shot count becomes more of a concern. The Multi column cell (MCC) exposure method, the key concept of which is the parallelization of the electron beam columns with a CP, can overcome this concern. It is expected that by using the MCC exposure system, those techniques will be applicable to the rapid establishment for the 14 nm node technology.

  17. Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes

    NASA Astrophysics Data System (ADS)

    Seoane, N.; Aldegunde, M.; Nagy, D.; Elmessary, M. A.; Indalecio, G.; García-Loureiro, A. J.; Kalna, K.

    2016-07-01

    We investigate the performance and scalability of III-V-OI In0.53Ga0.47As and SOI Si FinFETs using state-of-the-art in-house-built 3D simulation tools. Three different technology nodes specified in the ITRS have been analysed with gate lengths (L G) of 14.0 nm, 12.8 and 10.4 nm for the InGaAs FinFETs and 12.8 nm, 10.7 and 8.1 nm for the Si devices. At a high drain bias, the 12.8 and 10.4 nm InGaAs FinFETs deliver 15% and 13% larger on-currents but 14% larger off-currents than the equivalent 12.8 and 10.7 nm Si FinFETs, respectively. For equivalent gate lengths, both the InGaAs and the Si FinFETs have the same I ON/I OFF ratio (5.9 × 104 when L G = 12.8 nm and 5.7 × 104 when L G = 10.4(10.7) nm). A more pronounced S/D tunnelling affecting the InGaAs FinFETs leads to a larger deterioration in their SS (less than 10%) and DIBL (around 20%) compared to the Si counterparts.

  18. Combined dose and geometry correction (DMG) for low energy multi electron beam lithography (5kV): application to the 16nm node

    NASA Astrophysics Data System (ADS)

    Martin, Luc; Manakli, Serdar; Bayle, Sebastien; Belledent, Jérôme; Soulan, Sebastien; Wiedemann, Pablo; Farah, Abdi; Schiavone, Patrick

    2012-03-01

    Lithography faces today many challenges to meet the ITRS road-map. 193nm is still today the only existing industrial option to address high volume production for the 22nm node. Nevertheless to achieve such a resolution, double exposure is mandatory for critical level patterning. EUV lithography is still challenged by the availability of high power source and mask defectivity and suffers from a high cost of ownership perspective. Its introduction is now not foreseen before 2015. Parallel to these mask-based technologies, maskless lithography regularly makes significant progress in terms of potential and maturity. The massively parallel e-beam solution appears as a real candidate for high volume manufacturing. Several industrial projects are under development, one in the US, with the KLA REBL project and two in Europe driven by IMS Nanofabrication (Austria; MAPPER (The Netherlands). Among the developments to be performed to secure the takeoff of the multi-beam technology, the availability of a rapid and robust data treatment solution will be one of the major challenges. Within this data preparation flow, advanced proximity effect corrections must be implemented to address the 16nm node and below. This paper will detail this process and compare correction strategies in terms of robustness and accuracy. It will be based on results obtained using a MAPPER tool within the IMAGINE program driven by CEA-LETI, in Grenoble, France. All proximity effects corrections and the dithering step were performed using the software platform Inscale® from Aselta Nanographics. One important advantage of Inscale® is the ability to combine both model based dose and geometry adjustment to accurately pattern critical features. The paper will focus on the advantage of combining those two corrections at the 16nm node instead of using only geometry corrections. Thanks to the simulation capability of Inscale®, pattern fidelity and correction robustness will be evaluated and compared between

  19. Waveguide effect in high-NA EUV lithography: The key to extending EUV lithography to the 4-nm node

    NASA Astrophysics Data System (ADS)

    Yeung, Michael; Barouch, Eytan; Oh, Hye-Keun

    2015-06-01

    One of the main concerns about EUV lithography is whether or not it can be extended to very high numerical aperture. In this paper, rigorous electromagnetic simulation is first used to show that there is an interesting waveguide effect occurring in the 4-nm feature size regime. An exact mathematical analysis is then presented to explain the effect observed in the simulation. This waveguide effect is applied to simulate the printing of 4-nm lines and spaces with excellent aerial-image contrast and peak intensity. The feasibility of EUV lithography for printing logic circuits containing general two-dimensional patterns with 4-nm feature size is also demonstrated.

  20. Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes

    NASA Astrophysics Data System (ADS)

    Pešić, Milan; Knebel, Steve; Geyer, Maximilian; Schmelzer, Sebastian; Böttger, Ulrich; Kolomiiets, Nadiia; Afanas'ev, Valeri V.; Cho, Kyuho; Jung, Changhwa; Chang, Jaewan; Lim, Hanjin; Mikolajick, Thomas; Schroeder, Uwe

    2016-02-01

    During dynamic random access memory (DRAM) capacitor scaling, a lot of effort was put searching for new material stacks to overcome the scaling limitations of the current material stack, such as leakage and sufficient capacitance. In this study, very promising results for a SrTiO3 based capacitor with a record low capacitance equivalent thickness value of 0.2 nm at target leakage current are presented. Due to the material properties of SrTiO3 films (high vacancy concentration and low band gap), which are leading to an increased leakage current, a physical thickness of at least 8 nm is required at target leakage specifications. However, this physical thickness would not fit into an 18 nm DRAM structure. Therefore, two different new approaches to develop a new ZrO2 based DRAM capacitor stack by changing the inter-layer material from Al2O3 to SrO and the exchange of the top electrode material from TiN to Pt are presented. A combination of these two approaches leads to a capacitance equivalent thickness value of 0.47 nm. Most importantly, the physical thickness of <5 nm for the dielectric stack is in accordance with the target specifications. Detailed evaluation of the leakage current characteristics leads to a capacitor model which allows the prediction of the electrical behavior with thickness scaling.

  1. The study of EUVL mask defect inspection technology for 32-nm half-pitch node device and beyond

    NASA Astrophysics Data System (ADS)

    Shigemura, Hiroyuki; Amano, Tsuyoshi; Nishiyama, Yasushi; Suga, Osamu; Terasawa, Tsuneo; Arisawa, Yukiyasu; Hashimoto, Hideaki; Kameya, Norio; Takeda, Masaya; Kikuiri, Nobutaka; Hirano, Ryoichi; Hirono, Masatoshi

    2008-10-01

    In this paper, we will report on our experimental and simulation results on the impact of EUVL mask absorber structure and of inspection system optics on mask defect detection sensitivity. We employed a commercial simulator EM-Suite (Panoramic Technology, Inc.) which calculated rigorously using FDTD (Finite-difference time-domain) method. By using various optical constants of absorber stacks, we calculated image contrasts and defect image signals as obtained from the mask defect inspection system. We evaluated the image contrast and the capability of detecting defects on the EUVL masks by using a new inspection tool made by NuFlare Technology, Inc. (NFT) and Advanced Mask Inspection Technology, Inc. (AMiT). This tool is based on NPI-5000 which is the leading-edge photomask defect inspection system using 199nm wavelength inspection optics. The programmed defect masks with LR-TaBN and LRTaSi absorbers were used which had various sized opaque and clear extension defects on hp-160nm, hp-225nm, and hp- 325nm line and space patterns. According to the analysis, reflectivity of EUVL mask absorber structures and the inspection optics have large influence on image contrast and defect sensitivity. It is very important to optimize absorber structure and inspection optics for the development of EUVL mask inspection technology, and for the improvement of performance of EUV lithographic systems.

  2. Black border, mask 3D effects: covering challenges of EUV mask architecture for 22nm node and beyond

    NASA Astrophysics Data System (ADS)

    Davydova, Natalia; van Setten, Eelco; de Kruif, Robert; Connolly, Brid; Fukugami, Norihito; Kodera, Yutaka; Morimoto, Hiroaki; Sakata, Yo; Kotani, Jun; Kondo, Shinpei; Imoto, Tomohiro; Rolff, Haiko; Ullrich, Albrecht; Jaganatharaja, Ramasubramanian Kottumakulal; Lammers, Ad; Oorschot, Dorothe; Man, Cheuk-Wah; Schiffelers, Guido; van Dijk, Joep

    2014-10-01

    Photomask is at the heart of a lithographic scanner's optical path. It cannot be left non-optimized from the imaging point of view. In this work we provide new insights on two critical aspects of EUV mask architecture: optimization of absorber for 16 nm half-pitch imaging and a systematic approach to black border EUV and DUV reflectance specifications. Good 16 nm imaging is demonstrated on ASML NXE:3300 EUV scanner. Currently a relatively high dose resist is used for imaging and the dose reduction is desired. Optimization (reduction) of absorber height and mask CD bias can allow for up to 30% dose reduction without essential contrast loss. Disadvantages of absorber height reduction are ~7 nm increase of best focus range through pitch and tighter absorber height mean to target and uniformity requirements. A disadvantage of a smaller reticle CD (down to 14 nm 1x) is manufacturing process uniformity over the reticle. A systematic approach of black border reflections impact on imaging is established. The image border is a pattern free dark area surrounding the image field and preventing exposure of the image field neighborhood on wafer. Currently accepted design of the black border on EUV reticle is an image border where the absorber and multilayer stack are etched down to the substrate and EUV reflectance is reduced to <0.05%. DUV reflectance of such a black border is about 5%. It is shown that a tighter DUV reflectance specification <1.5% is required driven by the impact of DUV reflections from the black border on imaging. NXE:3300 and NXE:3100 experimental imaging results are shown. The need of low DUV wavelength reflectance metrology (in the range 100-300 nm) is demonstrated using an estimated NXE scanner out-of-band DUV spectrum. Promising results of low DUV reflectance of the black border are shown.

  3. Phase-change memory technology with self-aligned μTrench cell architecture for 90 nm node and beyond

    NASA Astrophysics Data System (ADS)

    Pirovano, A.; Pellizzer, F.; Tortorelli, I.; Riganó, A.; Harrigan, R.; Magistretti, M.; Petruzza, P.; Varesi, E.; Redaelli, A.; Erbetta, D.; Marangon, T.; Bedeschi, F.; Fackenthal, R.; Atwood, G.; Bez, R.

    2008-09-01

    A novel self-aligned μTrench-based cell architecture for phase change memory (PCM) process is presented. The low programming current and the good dimensional control of the sub-lithographic features achieved with the μTrench structure are combined with a self-aligned patterning strategy that simplify the integration process in term of alignment tolerances and of number of critical masks. The proposed architecture has been integrated in a 90 nm 128 Mb vehicle based on a pnp bipolar junction transistor for the array selection. The good active and leakage currents achieved by the purposely optimized selecting transistors combined with programming currents of 300 μA of the storage element and good distributions measured on the 128 Mb array demonstrate the suitability of the proposed architecture for the production of high-density PCM arrays at 90 nm and beyond.

  4. Single-digit-resolution nanopatterning with extreme ultraviolet light for the 2.5 nm technology node and beyond

    NASA Astrophysics Data System (ADS)

    Mojarad, N.; Hojeij, M.; Wang, L.; Gobrecht, J.; Ekinci, Y.

    2015-02-01

    All nanofabrication methods come with an intrinsic resolution limit, set by their governing physical principles and instrumentation. In the case of extreme ultraviolet (EUV) lithography at 13.5 nm wavelength, this limit is set by light diffraction and is ~3.5 nm. In the semiconductor industry, the feasibility of reaching this limit is not only a key factor for the current developments in lithography technologies, but also is an important factor in deciding whether photon-based lithography will be used for future high-volume manufacturing. Using EUV-interference lithography we show patterning with 7 nm resolution in making dense periodic line-space structures with 14 nm periodicity. Achieving such a cutting-edge resolution has been possible by integrating a high-quality synchrotron beam, precise nanofabrication of masks, very stable exposures instrumentation, and utilizing effective photoresists. We have carried out exposure on silicon- and hafnium-based photoresists and we demonstrated the extraordinary capability of the latter resist to be used as a hard mask for pattern transfer into Si. Our results confirm the capability of EUV lithography in the reproducible fabrication of dense patterns with single-digit resolution. Moreover, it shows the capability of interference lithography, using transmission gratings, in evaluating the resolution limits of photoresists.All nanofabrication methods come with an intrinsic resolution limit, set by their governing physical principles and instrumentation. In the case of extreme ultraviolet (EUV) lithography at 13.5 nm wavelength, this limit is set by light diffraction and is ~3.5 nm. In the semiconductor industry, the feasibility of reaching this limit is not only a key factor for the current developments in lithography technologies, but also is an important factor in deciding whether photon-based lithography will be used for future high-volume manufacturing. Using EUV-interference lithography we show patterning with 7 nm

  5. An integrated imaging system for the 45-nm technology node contact holes using polarized OAI, immersion, weak PSM, and negative resists

    NASA Astrophysics Data System (ADS)

    Petersen, John S.; Maslow, Mark J.; Greenway, Robert T.

    2005-05-01

    Imaging contact holes has become a major technology barrier for optical lithography in the deep sub-wavelength era. Using hyper-numerical aperture, extreme off-axis illumination with TE-polarization, weak PSM and negative-acting resists 50nm contacts on a 90nm pitch can be produced with better than 0.3 micron depth-of-focus with 5% exposure latitude and maximum exposure latitude of greater than 15% at best focus. Large depth-of-focus across-pitch range solutions for 50nm contacts require the use of multiple exposures using unique sources but smaller focus budgets can be reduced to single exposure. This work defines possible integrated imaging systems that will allow imaging of deep sub-wavelength sized contact holes and then compares these to other solutions that have been proposed in the literature. Specifically, source design through normalized-image-log-slope, normalized-resist-image-log-slope and process window mapping, development of contact hole primitives using full mask transform correction (where the mask pattern shape, material and topography are taken into account) and resist requirements will be discussed for developing dense, mid-range and isolated pitch contact hole imaging solutions for the 45nm technology node.

  6. High-etching selectivity of spin-on-carbon hard mask process for 22nm node and beyond

    NASA Astrophysics Data System (ADS)

    Iwao, Fumiko; Shimura, Satoru; Kyouda, Hideharu; Oyama, Kenichi; Yamauchi, Shohei; Hara, Arisa; Natori, Sakurako; Yaegashi, Hidetami

    2012-03-01

    As part of the trend toward finer semiconductor design rules, the resist film thickness is getting thinner, and the etching technology that uses resist masking is getting more difficult. To solve such a problem in recent years, the film structure used in the resist process also is changing from the single-layer process (BARC and resist stacked film) to the multi-layer process (Carbon hard-mask, middle layer and resist stacked film) The carbon hard-mask of multi-layer process can be divided into two kinds, which are the CVD-carbon (CVD-C) that uses the chemical vapor deposition method and Spin-on-carbon (SOC) that uses the spin-coating method. CVD-C is very attractive for ensuring the high etching selection ratio, but still has major challenges in particle reduction, lower planarization of substrate and high process cost. On the other hand, SOC is very attractive for low cost process, high level of planarization of substrate and no particles. Against this background, we verify the development of the SOC that had the high etch selection ratio by improving etching condition, material and SOC cure condition. Moreover, we can fabricate below 30nm SiO2 patterning and the possibility of development with extreme ultraviolet lithography (EUVL) was suggested. This paper reports on the results of a comprehensive process evaluation of a SOC based multi-layer technology using lithography clusters, etching tools.

  7. Impact of the spacer dielectric constant on parasitic RC and design guidelines to optimize DC/AC performance in 10-nm-node Si-nanowire FETs

    NASA Astrophysics Data System (ADS)

    Hong, Jae-Ho; Lee, Sang-Hyun; Kim, Ye-Ram; Jeong, Eui-Young; Yoon, Jun-Sik; Lee, Jeong-Soo; Baek, Rock-Hyun; Jeong, Yoon-Ha

    2015-04-01

    In this paper, we propose an optimized design for Si-nanowire FETs in terms of spacer dielectric constant (κsp), extension length (LEXT), nanowire diameter (Dnw), and operation voltage (VDD) for the sub-10 nm technology node. Using well-calibrated TCAD simulations and analytic RC models, we have quantitatively evaluated geometry-dependent parasitic series resistances (RSD) and capacitances (Cpara). Compared with low-κ spacers, high-κ spacers exhibit a higher on/off-current ratio with a lower RSD, but show severe degradation in their AC performance owing to a higher Cpara. Considering the trade-off between RSD and Cpara, optimal geometry-dependent κsp values at various supply voltages (VDD) are determined using gate delay (CV/I) and current-gain cutoff frequency (fT). We found that as LEXT and VDD decrease and Dnw increases, the optimal κsp value shifts from the high-κ to low-κ regime.

  8. Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

    NASA Astrophysics Data System (ADS)

    Popovici, M.; Swerts, J.; Redolfi, A.; Kaczer, B.; Aoulaiche, M.; Radu, I.; Clima, S.; Everaert, J.-L.; Van Elshocht, S.; Jurczak, M.

    2014-02-01

    Improved metal-insulator-metal capacitor (MIMCAP) stacks with strontium titanate (STO) as dielectric sandwiched between Ru as top and bottom electrode are shown. The Ru/STO/Ru stack demonstrates clearly its potential to reach sub-20 nm technology nodes for dynamic random access memory. Downscaling of the equivalent oxide thickness, leakage current density (Jg) of the MIMCAPs, and physical thickness of the STO have been realized by control of the Sr/Ti ratio and grain size using a heterogeneous TiO2/STO based nanolaminate stack deposition and a two-step crystallization anneal. Replacement of TiN with Ru as both top and bottom electrodes reduces the amount of electrically active defects and is essential to achieve a low leakage current in the MIM capacitor.

  9. Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

    SciTech Connect

    Popovici, M. Swerts, J.; Redolfi, A.; Kaczer, B.; Aoulaiche, M.; Radu, I.; Clima, S.; Everaert, J.-L.; Van Elshocht, S.; Jurczak, M.

    2014-02-24

    Improved metal-insulator-metal capacitor (MIMCAP) stacks with strontium titanate (STO) as dielectric sandwiched between Ru as top and bottom electrode are shown. The Ru/STO/Ru stack demonstrates clearly its potential to reach sub-20 nm technology nodes for dynamic random access memory. Downscaling of the equivalent oxide thickness, leakage current density (J{sub g}) of the MIMCAPs, and physical thickness of the STO have been realized by control of the Sr/Ti ratio and grain size using a heterogeneous TiO{sub 2}/STO based nanolaminate stack deposition and a two-step crystallization anneal. Replacement of TiN with Ru as both top and bottom electrodes reduces the amount of electrically active defects and is essential to achieve a low leakage current in the MIM capacitor.

  10. Advanced mask technique to improve bit line CD uniformity of 90 nm node flash memory in low-k1 lithography

    NASA Astrophysics Data System (ADS)

    Kim, Jong-doo; Choi, Jae-young; Kim, Jea-hee; Han, Jae-won

    2008-10-01

    As devices size move toward 90nm technology node or below, defining uniform bit line CD of flash devices is one of the most challenging features to print in KrF lithography. There are two principal difficulties in defining bit line on wafer. One is insufficient process margin besides poor resolution compared with ArF lithography. The other is that asymmetric bit line should be made for OPC(Optical Proximity Correction) modeling. Therefore advanced ArF lithography scanner should be used for define bit line with RETs (Resolution Enhancement Techniques) such as immersion lithography, OPC, PSM(Phase Shift Mask), high NA(Numerical Aperture), OAI(Off-Axis Illumination), SRAF(Sub-resolution Assistant Feature), and mask biasing.. Like this, ArF lithography propose the method of enhancing resolution, however, we must spend an enormous amount of CoC(cost of ownership) to utilize ArF photolithography process than KrF. In this paper, we suggest method to improve of bit line CD uniformity, patterned by KrF lithographic process in 90nm sFlash(stand alone Flash) devices. We applied new scheme of mask manufacturing, which is able to realize 2 different types of mask, binary and phase-shift, into one plate. Finally, we could get the more uniform bit lines and we expect to get more stable properties then before applying this technique.

  11. Integration and automation of DoseMapper in a logic fab APC system: application for 45/40/28nm node

    NASA Astrophysics Data System (ADS)

    Le Gratiet, Bertrand; Salagnon, Christophe; de Caunes, Jean; Mikolajczak, Marc; Morin, Vincent; Chojnowski, Nicolas; Sundermann, Frank; Massin, Jean; Pelletier, Alice; Metz, Joel; Blancquaert, Yoann; Bouyssou, Regis; Pelissier, Arthur; Belmont, Olivier; Strapazzon, Anne; Phillips, Anna; Devoivre, Thierry; Bernard, Emilie; Batail, Estelle; Thevenon, Lionel; Bry, Benedicte; Bernard-Granger, Fabrice; Oumina, Ahmed; Baron, Marie-Pierre; Gueze, Didier

    2012-03-01

    The main difficulty related to DoseMapper correction is to generate an appropriate CD datacollection to feed DoseMapper and to generate DoseRecipe in a user friendly way, especially with a complex process mix. We could heavily measure the silicon and create, in feedback mode, the corresponding DoseRecipe. However, such approach in a logic fab becomes a heavy duty due to the number of different masks / product / processes. We have observed that process CD variability is significantly depending on systematic intrawafer and intrafield CD footprints that can be measured and applied has generic pre-correction for any new product/mask process in-line. The applied CD correction is based on a CD (intrafield: Mask + Straylight & intrawafer: Etch Bias) variability "model" handled by the FAB APC (Advanced Process Control). - Individual CD profile correction component are generated "off-line" (1) for Intrafield Mask via automatic CD extraction from a Reticle CD database (2) for Intrafield Straylight via a CD "model" (3) for Intrawafer Etch Bias via engineering input based on process monitoring. - These CD files are handled via the FAB APC/automation system which is remotely taking control of DoseMapper server via WEB services, so that CD profiles are generated "off-line" (before the lot is being processed) and stored in a profile database while DoseRecipes are created "real-time" on demand via the automation when the lot comes to the scanner to be processed. DoseRecipe and CD correction profiles management is done via the APC system. The automated DoseRecipe creation is now running since the beginning of 2011 contributing to bring both intrafield and intrawafer GATE CDu below 1nm 3sigma, for 45/40 & 28nm nodes.

  12. PINS-3X Operations

    SciTech Connect

    E.H. Seabury

    2013-09-01

    Idaho National Laboratory’s (INL’s) Portable Isotopic Neutron Spectroscopy System (PINS) non-intrusively identifies the chemical fill of munitions and sealed containers. The PINS-3X variant of the system is used to identify explosives and uses a deuterium-tritium (DT) electronic neutron generator (ENG) as the neutron source. Use of the system, including possession and use of the neutron generator and shipment of the system components requires compliance with a number of regulations. This report outlines some of these requirements as well as some of the requirements in using the system outside of INL.

  13. Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS)

    NASA Astrophysics Data System (ADS)

    Wang, G. L.; Moeen, M.; Abedin, A.; Kolahdouz, M.; Luo, J.; Qin, C. L.; Zhu, H. L.; Yan, J.; Yin, H. Z.; Li, J. F.; Zhao, C.; Radamson, H. H.

    2013-09-01

    SiGe has been widely used for source/drain (S/D) engineering in pMOSFETs to enhance channel mobility. In this study, selective Si1-xGex growth (0.25 ≤ x ≤ 0.35) with boron concentration of 1-3 × 1020 cm-3 in the process for 22 nm node complementary metal-oxide semiconductor (CMOS) has been investigated and optimized. The growth parameters were carefully tuned to achieve deposition of high quality and highly strained material. The thermal budget was decreased to 800 °C to suppress dopant diffusion, to minimize Si loss in S/D recesses, and to preserve the S/D recess shape. Two layers of Si1-xGex were deposited: a bottom layer with high Ge content (x = 0.35) which filled the recess and a cap layer with low Ge content (x = 0.25) which was elevated in the S/D regions. The elevated SiGe cap layer was intended to be consumed during the Ni-silicidation process in order to avoid strain reduction in the channel region arising from strain relaxation in SiGe S/D. In this study, a kinetic gas model was also applied to predict the pattern dependency of the growth and to determine the epi-profile in different transistor arrays. The input parameters include growth temperature, partial pressures of reactant gases, and chip layout. By using this model, the number of test wafers for epitaxy experiments can be decreased significantly. When the epitaxy process parameters can be readily predicted by the model for epi-profile control in an advanced chip design, fast and cost-effective process development can be achieved.

  14. W versus Co-Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22 nm Technology Nodes

    NASA Astrophysics Data System (ADS)

    Veloso, Anabela; Aik Chew, Soon; Schram, Tom; Dekkers, Harold; Van Ammel, Annemie; Witters, Thomas; Tielens, Hilde; Heylen, Nancy; Devriendt, Katia; Sebaai, Farid; Brus, Stephan; Ragnarsson, Lars-Åke; Pantisano, Luigi; Eneman, Geert; Carbonell, Laure; Richard, Olivier; Favia, Paola; Geypen, Jef; Bender, Hugo; Higuchi, Yuichi; Phatak, Anup; Thean, Aaron; Horiguchi, Naoto

    2013-04-01

    In this work we provide a comprehensive evaluation of a novel, low-resistance Co-Al alloy vs W to fill aggressively scaled gates with high aspect-ratios [gate height (Hgate) ˜50-60 nm, gate length (Lgate) ≥20-25 nm]. We demonstrate that, with careful liner/barrier materials selection and tuning, well-behaved devices are obtained, showing: tight gate resistance (Rgate) distributions down to Lgate˜20 nm, low threshold voltage (VT) values, comparable DC and bias temperature instability (BTI) behavior, and improved RF response. The impact of fill-metals intrinsic stress, including the presence of occasional voids in narrow W-gates, on devices fabrication and performance is also explored.

  15. Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22 nm node pMOSFETs

    NASA Astrophysics Data System (ADS)

    Wang, Guilei; Moeen, M.; Abedin, A.; Xu, Yefeng; Luo, Jun; Guo, Yiluan; Qin, Changliang; Tang, Zhaoyun; Yin, Haizhou; Li, Junfeng; Yan, Jiang; Zhu, Huilong; Zhao, Chao; Chen, Dapeng; Ye, Tianchun; Kolahdouz, M.; Radamson, Henry H.

    2015-12-01

    Pattern dependency of selective epitaxy of Si1-xGex (0.20 ⩽ x ⩽ 0.45) grown in recessed source/drain regions of 22 nm pMOSFETs has been studied. A complete substrate mapping over 200 mm wafers was performed and the transistors' characteristics were measured. The designed SiGe profile included a layer with Ge content of 40% at the bottom of recess (40 nm) and capped with 20% Ge as a sacrificial layer (20 nm) for silicide formation. The induced strain in the channel was simulated before and after silicidation. The variation of strain was localized and its effect on the transistors' performance was determined. The chips had a variety of SiGe profile depending on their distance (closest, intermediate and central) from the edge of the 200 mm wafer. SiGe layers with poor epi-quality were observed when the coverage of exposed Si of the chip was below 1%. This causes high Ge contents with layer thicknesses above the critical thickness.

  16. Optimization of self-aligned double patterning (SADP)-compliant layout designs using pattern matching for 10nm technology nodes and beyond

    NASA Astrophysics Data System (ADS)

    Wang, Lynn T.; Schroeder, Uwe Paul; Woo, Youngtag; Zeng, Jia; Madhavan, Sriram; Capodieci, Luigi

    2016-03-01

    A pattern-based methodology for optimizing Self-Aligned Double Patterning (SADP)-compliant layout designs is developed based on detecting cut-induced hotspot patterns and replacing them with pre-characterized fixing solutions. A pattern library with predetermined fixing solutions is built. A pattern-based engine searches for matching patterns in the layout designs. When a match is found, the engine opportunistically replaces the detected pattern with a pre-characterized fixing solution, preserving only the design rule check-clean replacements. The methodology is demonstrated on a 10nm routed block. A small library of fourteen patterns reduced the number of cut-induced design rule check violations by 100% and lithography hotspots by 23%.

  17. Lymph nodes

    MedlinePlus Videos and Cool Tools

    The lymphatic system is a complex network of thin vessels, valves, ducts, nodes, and organs. It helps to protect and maintain the fluid ... The most common cause of swollen lymph nodes is infection, which might occur even if the infection ...

  18. Lymph nodes

    MedlinePlus Videos and Cool Tools

    ... and conveying lymph and by producing various blood cells. Lymph nodes play an important part in the ... the microorganisms being trapped inside collections of lymph cells or nodes. Eventually, these organisms are destroyed and ...

  19. Connecting Node

    NASA Technical Reports Server (NTRS)

    Johnson, Christopher J.; Raboin, Jasen L.; Spexarth, Gary R.

    2009-01-01

    A paper describes the Octanode, a connecting node that facilitates the integration of multiple docking mechanisms, hatches, windows, and internal and external systems with the use of flat surfaces. The Octanode is a 26- faced Great Rhombicuboctahedron Archi medean solid with six octagonshaped panels, eight hexagon-shaped panels, and 12 square panels using three unique, simple, flat shapes to construct a spherical approximation. Each flat shape can be constructed with a variety of material and manufacturing techniques, such as honeycomb composite panels or a pocketed skinstringer configuration, using conventional means. The flat shapes can be connected together and sealed to create a pressurizable volume by the use of any conventional means including welding or fastening devices and sealant. The node can then be connected to other elements to allow transfer between those elements, or it could serve as an airlock. The Octanode can be manufactured on the ground and can be integrated with subsystems including hatches and ports. The node can then be transported to its intended location, whether on orbit or on surface. Any of the flat panels could be replaced by curved ones, turning the node into a copula. Windows may be placed on flat panes with optimal viewing angles that are not blocked by large connecting nodes. The advantage of using flat panels to represent a spherical approximation is that this allows for easier integration of subsystems and design features.

  20. The SEMATECH Berkeley MET pushing EUV development beyond 22-nm half pitch

    SciTech Connect

    Naulleau, P.; Anderson, C. N.; Backlea-an, L.-M.; Chan, D.; Denham, P.; George, S.; Goldberg, K. A.; Hoef, B.; Jones, G.; Koh, C.; La Fontaine, B.; McClinton, B.; Miyakawa, R.; Montgomery, W.; Rekawa, S.; Wallow, T.

    2010-03-18

    Microfield exposure tools (METs) play a crucial role in the development of extreme ultraviolet (EUV) resists and masks, One of these tools is the SEMATECH Berkeley 0.3 numerical aperture (NA) MET, Using conventional illumination this tool is limited to approximately 22-nm half pitch resolution. However, resolution enhancement techniques have been used to push the patterning capabilities of this tool to half pitches of 18 nm and below, This resolution was achieved in a new imageable hard mask which also supports contact printing down to 22 nm with conventional illumination. Along with resolution, line-edge roughness is another crucial hurdle facing EUV resists, Much of the resist LER, however, can be attributed to the mask. We have shown that intenssionally aggressive mask cleaning on an older generation mask causes correlated LER in photoresist to increase from 3.4 nm to 4,0 nm, We have also shown that new generation EUV masks (100 pm of substrate roughness) can achieve correlated LER values of 1.1 nm, a 3x improvement over the correlated LER of older generation EUV masks (230 pm of substrate roughness), Finally, a 0.5-NA MET has been proposed that will address the needs of EUV development at the 16-nm node and beyond, The tool will support an ultimate resolution of 8 nm half-pitch and generalized printing using conventional illumination down to 12 nm half pitch.

  1. Printability study of pattern defects in the EUV mask as a function of hp nodes

    NASA Astrophysics Data System (ADS)

    Kim, Tae-Geun; Seo, Hwan-Seok; Kang, In-Yong; Jeong, Chang Young; Huh, Sungmin; Na, Jihoon; Kim, Seong-Sue; Jeon, Chan-Uk; Mochi, Iacopo; Goldberg, Kenneth A.

    2012-03-01

    Amplitude defects (or absorber defects), which are located in absorber patterns or multilayer surface, can be repaired during mask process while phase defects (or multilayer defects) cannot. Hence, inspection and handling of both defects should be separately progressed. Defect printability study of pattern defects is very essential since it provides criteria for mask inspection and repair. Printed defects on the wafer kill cells and reduce the device yield in wafer processing, and thus all the printable defects have to be inspected and repaired during the mask fabrication. In this study, pattern defect printability of the EUV mask as a function of hp nodes is verified by EUV exposure experiments. For 3x nm hp nodes, defect printability is evaluated by NXE3100. For 2x nm hp node, since resolution of a current EUV scanner is not enough, SEMATECH-Berkeley actinic inspection tool (AIT) as well as micro-field exposure tool (MET) in LBNL are utilized to verify it,. Furthermore those printability results are compared with EUV simulations. As a result, we define size of defects to be controlled in each device node.

  2. A 3 x 2 Achievement Goal Model

    ERIC Educational Resources Information Center

    Elliot, Andrew J.; Murayama, Kou; Pekrun, Reinhard

    2011-01-01

    In the present research, a 3 x 2 model of achievement goals is proposed and tested. The model is rooted in the definition and valence components of competence, and encompasses 6 goal constructs: task-approach, task-avoidance, self-approach, self-avoidance, other-approach, and other-avoidance. The results from 2 studies provided strong support for…

  3. Intermonitor variability of GT3X accelerometer.

    PubMed

    Santos-Lozano, A; Torres-Luque, G; Marín, P J; Ruiz, J R; Lucia, A; Garatachea, N

    2012-12-01

    The main purpose of this study was to assess the inter-monitor reliability of the tri-axial GT3X Actigraph accelerometer over a range of physical activities (PA). This device collects motion data on each of the vertical (Y), horizontal right-left (X), and horizontal front-back (Z) axes and also calculates the vector summed value √X(2)+Y(2)+Z(2) known as 'vector magnitude' (VM). 8 GT3X accelerometers were worn at the same time by the same participant. Accelerometers were placed back-to-front, all facing forward and in sets of 4 securely taped together, attached to a belt and allocating each block above either left or right hip at waist level. Inter-monitor reliability was assessed during 6 conditions: rest, walking (4 and 6 km·h(-1)), running (8 and 10 km·h(-1)) and repeated sit-to-stand (40 times·min(-1)). The intra-class correlation coefficients were high for X, Y and Z axes (i.e., all ≥ 0.925) and for VM (≥ 0.946). In conclusion, we found good inter-instrument reliability of the GT3X accelerometer across all planes, yet our results also suggest that the X and Z axes do not provide further benefits over the 'traditional' Y-axis to assess the movement in typical PA. PMID:22791617

  4. Reconfigureable network node

    DOEpatents

    Vanderveen, Keith B.; Talbot, Edward B.; Mayer, Laurence E.

    2008-04-08

    Nodes in a network having a plurality of nodes establish communication links with other nodes using available transmission media, as the ability to establish such links becomes available and desirable. The nodes predict when existing communications links will fail, become overloaded or otherwise degrade network effectiveness and act to establish substitute or additional links before the node's ability to communicate with the other nodes on the network is adversely affected. A node stores network topology information and programmed link establishment rules and criteria. The node evaluates characteristics that predict existing links with other nodes becoming unavailable or degraded. The node then determines whether it can form a communication link with a substitute node, in order to maintain connectivity with the network. When changing its communication links, a node broadcasts that information to the network. Other nodes update their stored topology information and consider the updated topology when establishing new communications links for themselves.

  5. Modular sensor network node

    DOEpatents

    Davis, Jesse Harper Zehring; Stark, Jr., Douglas Paul; Kershaw, Christopher Patrick; Kyker, Ronald Dean

    2008-06-10

    A distributed wireless sensor network node is disclosed. The wireless sensor network node includes a plurality of sensor modules coupled to a system bus and configured to sense a parameter. The parameter may be an object, an event or any other parameter. The node collects data representative of the parameter. The node also includes a communication module coupled to the system bus and configured to allow the node to communicate with other nodes. The node also includes a processing module coupled to the system bus and adapted to receive the data from the sensor module and operable to analyze the data. The node also includes a power module connected to the system bus and operable to generate a regulated voltage.

  6. Multiple node remote messaging

    DOEpatents

    Blumrich, Matthias A.; Chen, Dong; Gara, Alan G.; Giampapa, Mark E.; Heidelberger, Philip; Ohmacht, Martin; Salapura, Valentina; Steinmacher-Burow, Burkhard; Vranas, Pavlos

    2010-08-31

    A method for passing remote messages in a parallel computer system formed as a network of interconnected compute nodes includes that a first compute node (A) sends a single remote message to a remote second compute node (B) in order to control the remote second compute node (B) to send at least one remote message. The method includes various steps including controlling a DMA engine at first compute node (A) to prepare the single remote message to include a first message descriptor and at least one remote message descriptor for controlling the remote second compute node (B) to send at least one remote message, including putting the first message descriptor into an injection FIFO at the first compute node (A) and sending the single remote message and the at least one remote message descriptor to the second compute node (B).

  7. Sentinel node biopsy (image)

    MedlinePlus

    Sentinel node biopsy is a technique which helps determine if a cancer has spread (metastasized), or is contained locally. When a ... is closest to the cancer site. Sentinel node biopsy is used to stage many kinds of cancer, ...

  8. Scalable Node Monitoring

    SciTech Connect

    Drotar, Alexander P.; Quinn, Erin E.; Sutherland, Landon D.

    2012-07-30

    Project description is: (1) Build a high performance computer; and (2) Create a tool to monitor node applications in Component Based Tool Framework (CBTF) using code from Lightweight Data Metric Service (LDMS). The importance of this project is that: (1) there is a need a scalable, parallel tool to monitor nodes on clusters; and (2) New LDMS plugins need to be able to be easily added to tool. CBTF stands for Component Based Tool Framework. It's scalable and adjusts to different topologies automatically. It uses MRNet (Multicast/Reduction Network) mechanism for information transport. CBTF is flexible and general enough to be used for any tool that needs to do a task on many nodes. Its components are reusable and 'EASILY' added to a new tool. There are three levels of CBTF: (1) frontend node - interacts with users; (2) filter nodes - filters or concatenates information from backend nodes; and (3) backend nodes - where the actual work of the tool is done. LDMS stands for lightweight data metric servies. It's a tool used for monitoring nodes. Ltool is the name of the tool we derived from LDMS. It's dynamically linked and includes the following components: Vmstat, Meminfo, Procinterrupts and more. It works by: Ltool command is run on the frontend node; Ltool collects information from the backend nodes; backend nodes send information to the filter nodes; and filter nodes concatenate information and send to a database on the front end node. Ltool is a useful tool when it comes to monitoring nodes on a cluster because the overhead involved with running the tool is not particularly high and it will automatically scale to any size cluster.

  9. Protocol for multiple node network

    NASA Technical Reports Server (NTRS)

    Kirkham, Harold (Inventor)

    1995-01-01

    The invention is a multiple interconnected network of intelligent message-repeating remote nodes which employs an antibody recognition message termination process performed by all remote nodes and a remote node polling process performed by other nodes which are master units controlling remote nodes in respective zones of the network assigned to respective master nodes. Each remote node repeats only those messages originated in the local zone, to provide isolation among the master nodes.

  10. Protocol for multiple node network

    NASA Technical Reports Server (NTRS)

    Kirkham, Harold (Inventor)

    1994-01-01

    The invention is a multiple interconnected network of intelligent message-repeating remote nodes which employs an antibody recognition message termination process performed by all remote nodes and a remote node polling process performed by other nodes which are master units controlling remote nodes in respective zones of the network assigned to respective master nodes. Each remote node repeats only those messages originated in the local zone, to provide isolation among the master nodes.

  11. Dynamic Interaction of Stress Granules, DDX3X, and IKK-α Mediates Multiple Functions in Hepatitis C Virus Infection

    PubMed Central

    Pène, Véronique; Sodroski, Catherine; Hsu, Ching-Sheng

    2015-01-01

    ABSTRACT The ubiquitous ATP-dependent RNA helicase DDX3X is involved in many cellular functions, including innate immunity, and is a pivotal host factor for hepatitis C virus (HCV) infection. Recently, we showed that DDX3X specifically recognizes the HCV 3′ untranslated region (UTR), leading to the activation of IKK-α and a cascade of lipogenic signaling to facilitate lipid droplet biogenesis and viral assembly (Q. Li, V. Pene, S. Krishnamurthy, H. Cha, and T. J. Liang, Nat Med 19:722–729, 2013, http://dx.doi.org/10.1038/nm.3190). The interaction of DDX3X with HCV core protein seems to be dispensable for its proviral role. In this study, through systematic imaging and biochemical and virologic approaches, we identified a dynamic association between DDX3X and various cellular compartments and viral elements mediating multiple functions of DDX3X in productive HCV infection. Upon HCV infection, the HCV 3′UTR interacts with DDX3X and IKK-α, which redistribute to speckle-like cytoplasmic structures shown to be stress granules (SGs). As viral proteins accumulate in infected cells, DDX3X granules together with SG-associated proteins redistribute and colocalize with HCV core protein around lipid droplets (LDs). IKK-α, however, does not relocate to the LD but translocates to the nucleus. In HCV-infected cells, various HCV nonstructural proteins also interact or colocalize with DDX3X in close proximity to SGs and LDs, consistent with the tight juxtaposition of the replication complex and the assembly site at the surface of LDs. Short interfering RNA (siRNA)-mediated silencing of DDX3X and multiple SG components markedly inhibits HCV infection. Our data suggest that DDX3X initiates a multifaceted cellular program involving dynamic associations with HCV RNA and proteins, IKK-α, SG, and LD surfaces for its crucial role in the HCV life cycle. IMPORTANCE DDX3X is a proviral host factor for HCV infection. Recently, we showed that DDX3X binds to the HCV 3

  12. Sol-Gel Synthesis of La(0.6)Sr(0.4)CoO(3-x) and Sm(0.5)Sr(0.5)CoO(3-x) Cathode Nanopowders for Solid Oxide Fuel Cells

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P.; Wise, Brent

    2011-01-01

    Nanopowders of La(0.6)Sr(0.4)CoO(3-x) (LSC) and Sm(0.5)Sr(0.5)CoO(3-x) (SSC) compositions, which are being investigated as cathode materials for intermediate temperature solid oxide fuel cells (IT-SOFC) with La(Sr)Ga(Mg)O(3-x) (LSGM) as the electrolyte, were synthesized by low-temperature sol-gel method using metal nitrates and citric acid. Thermal decomposition of the citrate gels was followed by simultaneous DSC/TGA methods. Development of phases in the gels, on heat treatments at various temperatures, was monitored by x-ray diffraction. Solgel powders calcined at 550 to 1000 C consisted of a number of phases. Single perovskite phase La(0.6)Sr(0.4)CoO(3-x) or Sm(0.5)Sr(0.5)CoO(3-x) powders were obtained at 1200 and 1300 C, respectively. Morphological analysis of the powders calcined at various temperatures was done by scanning electron microscopy. The average particle size of the powders was approx.15 nm after 700 C calcinations and slowly increased to 70 to 100 nm after heat treatments at 1300 to 1400 C.

  13. Maximizing the photo catalytic and photo response properties of multimodal plasmonic Ag/WO(3-x) heterostructure nanorods by variation of the Ag size.

    PubMed

    Ghosh, Sirshendu; Saha, Manas; Paul, Sumana; De, S K

    2015-11-21

    High quality nearly monodisperse colloidal WO3-x nanorods with an aspect ratio ∼18 were synthesized using the thermal decomposition technique. The effects of a capping agent and an activating agent on the nanorod aspect ratio have been studied. Excess carrier concentration due to large oxygen vacancy and smaller width of the nanorods compared to the Bohr exciton radius gives rise to an increase of the band gap. Shape anisotropy in nanorods results in two plasmonic absorbance bands at about 890 nm and 5900 nm corresponding to short axis and long axis plasmon modes. The short axis mode reveals an excellent plasmonic sensitivity of ∼345 nm per refractive index. A plasmonic photocatalysis process based on WO3-x nanorods has been developed to synthesize Ag/WO3-x heterostructures consisting of multiple Ag dots with ∼2 nm size, randomly decorated on the surface of the WO3-x nanorods. Long time irradiation leads to an increase in the size (5 nm) of Ag nanocrystals concomitant with decrease in the number of Ag nanocrystals attached per WO3-x nanorod. Plasmonic photocatalysis followed by thermal annealing produces only one Ag nanocrystal of size ∼10 nm on each WO3-x nanorod. Red shifting and broadening of plasmon bands of Ag nanocrystals and WO3-x nanorods confirm the formation of heterostructures between the metal and semiconductor. Detailed transmission electron micrograph analysis indicates the epitaxial growth of Ag nanocrystals onto WO3-x nanorods. A high photocurrent gain of about 4000 is observed for Ag (10 nm)/WO3-x heterostructures. The photodegradation rate for Rhodamine-B and methylene blue is maximum for Ag (10 nm)/WO3-x heterostructures due to efficient electron transfer from WO3-x nanorods to Ag nanocrystals. Metal plasmon-semiconductor exciton coupling, prominent plasmon absorbance of metal nanoparticles, and formation of an epitaxial interface are found to be the important factors to achieve the maximum photocatalytic activity and fabrication of a

  14. Lymph node culture

    MedlinePlus

    Culture - lymph node ... or viruses grow. This process is called a culture. Sometimes, special stains are also used to identify specific cells or microorganisms before culture results are available. If needle aspiration does not ...

  15. Metalorganic vapor phase epitaxy growth of ternary tetradymite Bi2Te3-xSex compounds

    NASA Astrophysics Data System (ADS)

    Kuznetsov, P. I.; Yakushcheva, G. G.; Luzanov, V. A.; Temiryazev, A. G.; Shchamkhalova, B. S.; Jitov, V. A.; Sizov, V. E.

    2015-01-01

    We report on a metal organic vapor epitaxy (MOVPE) of Bi2Te3-xSex films over the entire range of compositions (0 ≤ x ≤ 3) for the first time. The films were grown on Al2O3(0001) substrates at 465 °C using trimethylbismuth (Bi2Me3), diethyltellurium (Et2Te) and diisopropylselenium (iPro2Se) as metalorganic sources. To realize the 2D growth mode and to grow films with flat surfaces and high crystalline quality, a thin ZnTe buffer layer was used. As-grown films were studied using optical and AFM microscopy techniques and X-ray diffraction. It was found that under steady growth conditions the composition of Bi2Te3-xSex films strongly depends on the film thickness. But a high rate of interdiffusion of chalcogens at the growth temperature rapidly leads to a homogeneous composition of the film in the growth direction. Dependence of the intensity of X-ray reflection (0012) on the composition of Bi2Te3-xSex films x has extremes near x=1 (Bi2Te2 Se) and x=2 (Bi2Se2 Te). The AFM micrographs and profiles show large (above 2 μm) triangle-shaped atomically flat terraces with step height of a quintuple layer (0.90 nm) of the tetradymite-type compounds. The electronic properties of the grown films have been characterized via four probe magnetotransport measurements.

  16. Maximizing the photo catalytic and photo response properties of multimodal plasmonic Ag/WO3-x heterostructure nanorods by variation of the Ag size

    NASA Astrophysics Data System (ADS)

    Ghosh, Sirshendu; Saha, Manas; Paul, Sumana; de, S. K.

    2015-10-01

    High quality nearly monodisperse colloidal WO3-x nanorods with an aspect ratio ~18 were synthesized using the thermal decomposition technique. The effects of a capping agent and an activating agent on the nanorod aspect ratio have been studied. Excess carrier concentration due to large oxygen vacancy and smaller width of the nanorods compared to the Bohr exciton radius gives rise to an increase of the band gap. Shape anisotropy in nanorods results in two plasmonic absorbance bands at about 890 nm and 5900 nm corresponding to short axis and long axis plasmon modes. The short axis mode reveals an excellent plasmonic sensitivity of ~345 nm per refractive index. A plasmonic photocatalysis process based on WO3-x nanorods has been developed to synthesize Ag/WO3-x heterostructures consisting of multiple Ag dots with ~2 nm size, randomly decorated on the surface of the WO3-x nanorods. Long time irradiation leads to an increase in the size (5 nm) of Ag nanocrystals concomitant with decrease in the number of Ag nanocrystals attached per WO3-x nanorod. Plasmonic photocatalysis followed by thermal annealing produces only one Ag nanocrystal of size ~10 nm on each WO3-x nanorod. Red shifting and broadening of plasmon bands of Ag nanocrystals and WO3-x nanorods confirm the formation of heterostructures between the metal and semiconductor. Detailed transmission electron micrograph analysis indicates the epitaxial growth of Ag nanocrystals onto WO3-x nanorods. A high photocurrent gain of about 4000 is observed for Ag (10 nm)/WO3-x heterostructures. The photodegradation rate for Rhodamine-B and methylene blue is maximum for Ag (10 nm)/WO3-x heterostructures due to efficient electron transfer from WO3-x nanorods to Ag nanocrystals. Metal plasmon-semiconductor exciton coupling, prominent plasmon absorbance of metal nanoparticles, and formation of an epitaxial interface are found to be the important factors to achieve the maximum photocatalytic activity and fabrication of a high speed

  17. Maximizing the photo catalytic and photo response properties of multimodal plasmonic Ag/WO3-x heterostructure nanorods by variation of the Ag size

    NASA Astrophysics Data System (ADS)

    Ghosh, Sirshendu; Saha, Manas; Paul, Sumana; de, S. K.

    2015-10-01

    High quality nearly monodisperse colloidal WO3-x nanorods with an aspect ratio ~18 were synthesized using the thermal decomposition technique. The effects of a capping agent and an activating agent on the nanorod aspect ratio have been studied. Excess carrier concentration due to large oxygen vacancy and smaller width of the nanorods compared to the Bohr exciton radius gives rise to an increase of the band gap. Shape anisotropy in nanorods results in two plasmonic absorbance bands at about 890 nm and 5900 nm corresponding to short axis and long axis plasmon modes. The short axis mode reveals an excellent plasmonic sensitivity of ~345 nm per refractive index. A plasmonic photocatalysis process based on WO3-x nanorods has been developed to synthesize Ag/WO3-x heterostructures consisting of multiple Ag dots with ~2 nm size, randomly decorated on the surface of the WO3-x nanorods. Long time irradiation leads to an increase in the size (5 nm) of Ag nanocrystals concomitant with decrease in the number of Ag nanocrystals attached per WO3-x nanorod. Plasmonic photocatalysis followed by thermal annealing produces only one Ag nanocrystal of size ~10 nm on each WO3-x nanorod. Red shifting and broadening of plasmon bands of Ag nanocrystals and WO3-x nanorods confirm the formation of heterostructures between the metal and semiconductor. Detailed transmission electron micrograph analysis indicates the epitaxial growth of Ag nanocrystals onto WO3-x nanorods. A high photocurrent gain of about 4000 is observed for Ag (10 nm)/WO3-x heterostructures. The photodegradation rate for Rhodamine-B and methylene blue is maximum for Ag (10 nm)/WO3-x heterostructures due to efficient electron transfer from WO3-x nanorods to Ag nanocrystals. Metal plasmon-semiconductor exciton coupling, prominent plasmon absorbance of metal nanoparticles, and formation of an epitaxial interface are found to be the important factors to achieve the maximum photocatalytic activity and fabrication of a high speed

  18. Intrathymic lymph nodes in humans.

    PubMed

    Tanegashima, A; Ushiyama, I; Kikui, Y; Yamamoto, H

    2001-04-01

    An unusual lymph node exists in the centre of the human thymus. This lymph node, which we call an intrathymic lymph node (ITLN), possesses some interesting morphological characteristics. In ontogeny, this node seems to appear at the latter half of fetal period. The function of the ITLN is still unknown, but it is assumed that it may play a different role in the immune system than other peripheral lymph nodes by its characteristics. PMID:11327211

  19. Intrathymic lymph nodes in humans

    PubMed Central

    TANEGASHIMA, A.; USHIYAMA, I.; KIKUI, Y.; YAMAMOTO, H.

    2001-01-01

    An unusual lymph node exists in the centre of the human thymus. This lymph node, which we call an intrathymic lymph node (ITLN), possesses some interesting morphological characteristics. In ontogeny, this node seems to appear at the latter half of fetal period. The function of the ITLN is still unknown, but it is assumed that it may play a different role in the immune system than other peripheral lymph nodes by its characteristics. PMID:11327211

  20. Interferometer using a 3 x 3 coupler and Faraday mirrors.

    PubMed

    Breguet, J; Gisin, N

    1995-06-15

    A new interferometric setup using a 3 x 3 coupler and two Faraday mirrors is presented. It has the advantages of being built only with passive components, of freedom from the polarization fading problem, and of operation with a LED. It is well suited for sensing time-dependent signals and does not depend on reciprocal or nonreciprocal constant perturbations. PMID:19862044

  1. Efficient hardware implementation of 3X for radix-8 encoding

    NASA Astrophysics Data System (ADS)

    Ruiz, G. A.; Granda, Mercedes

    2007-05-01

    Several commercial processors have selected the radix-8 multiplier architecture to increase their speed, thereby reducing the number of partial products. Radix-8 encoding reduces the digit number length in a signed digit representation. Its performance bottleneck is the generation of the term 3X, also referred to as hard multiple. This term is usually computed by an adding and shifting operation, 3X=2X+X, in a high-speed adder. In a 2X+X addition, close full adders share the same input signal. This property permits simplified algebraic expressions associated to a 3X operation other than in a conventional addition. This paper shows that the 3X operation can be expressed in terms of two signals, H i and K i, functionally equivalent to two carries. Hi and Ki are computed in parallel using architectures which lead to an area and speed efficient implementation. For the purposes of comparison, implementation based on standard-cells of conventional adders has been compared with the proposed circuits based on these H i and K i signals. As a result, the delay of proposed serial scheme is reduced by roughly 67% without additional cost in area, the delay and area of the carry look-ahead scheme is reduced by 20% and 17%, and that of the parallel prefix scheme is reduced by 26% and 46%, respectively.

  2. XQL and Proximal Nodes.

    ERIC Educational Resources Information Center

    Baeza-Yates, Ricardo; Navarro, Gonzalo

    2002-01-01

    Discussion of models that have been developed to structure text documents for information retrieval focuses on XML and its proposed query language XQL. Considers efficiency of the query engine and shows that an already existing model, Proximal Nodes, can be used as an efficient query engine behind an XQL front-end. (Author/LRW)

  3. 7nm logic optical lithography with OPC-Lite

    NASA Astrophysics Data System (ADS)

    Smayling, Michael C.; Tsujita, Koichiro; Yaegashi, Hidetami; Axelrad, Valery; Nakayama, Ryo; Oyama, Kenichi; Yamauchi, Shohei; Ishii, Hiroyuki; Mikami, Koji

    2015-03-01

    The CMOS logic 22nm node was the last one done with single patterning. It used a highly regular layout style with Gridded Design Rules (GDR). Smaller nodes have required the same regular layout style but with multiple patterning for critical layers. A "line/cut" approach is being used to achieve good pattern fidelity and process margin.[1] As shown in Fig. 1, even with "line" patterns, pitch division will eventually be necessary. For the "cut" pattern, Design-Source-Mask Optimization (DSMO) has been demonstrated to be effective at the 20nm node and below.[2,3,4] Single patterning was found to be suitable down to 16nm, while double patterning extended optical lithography for cuts to the 10-12nm nodes. Design optimization avoided the need for triple patterning. Lines can be patterned with 193nm immersion with no complex OPC. The final line dimensions can be achieved by applying pitch division by two or four.[5] In this study, we extend the scaling using simplified OPC to the 7nm node for critical FEOL and BEOL layers. The test block is a reasonably complex logic function with ~100k gates of combinatorial logic and flip-flops, scaled from previous experiments. Simulation results show that for cuts at 7nm logic dimensions, the gate layer can be done with single patterning whose minimum pitch is 53nm, possibly some of the 1x metal layers can be done with double patterning whose minimum pitch is 53nm, and the contact layer will require triple patterning whose minimum pitch is 68nm. These pitches are less than the resolution limit of ArF NA=1.35 (72nm). However these patterns can be separated by a combination of innovative SMO for less than optical resolution limit and a process trick of hole-repair technique. An example of triple patterning coloring is shown in Fig 3. Fin and local interconnect are created by lines and trims. The number of trim patterns are 3 times (min. pitch=90nm) and twice (min. pitch=120nm), respectively. The small number of masks, large pitches, and

  4. Radiation Status of Sub-65 nm Electronics

    NASA Technical Reports Server (NTRS)

    Pellish, Jonathan A.

    2011-01-01

    Ultra-scaled complementary metal oxide semiconductor (CMOS) includes commercial foundry capabilities at and below the 65 nm technology node Radiation evaluations take place using standard products and test characterization vehicles (memories, logic/latch chains, etc.) NEPP focus is two-fold: (1) Conduct early radiation evaluations to ascertain viability for future NASA missions (i.e. leverage commercial technology development). (2) Uncover gaps in current testing methodologies and mechanism comprehension -- early risk mitigation.

  5. Novel high refractive index fluids for 193nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Santillan, Julius; Otoguro, Akihiko; Itani, Toshiro; Fujii, Kiyoshi; Kagayama, Akifumi; Nakano, Takashi; Nakayama, Norio; Tamatani, Hiroaki; Fukuda, Shin

    2006-03-01

    Despite the early skepticism towards the use of 193-nm immersion lithography as the next step in satisfying Moore's law, it continuous to meet expectations on its feasibility in achieving 65-nm nodes and possibly beyond. And with implementation underway, interest in extending its capability for smaller pattern sizes such as the 32-nm node continues to grow. In this paper, we will discuss the optical, physical and lithographic properties of newly developed high index fluids of low absorption coefficient, 'Babylon' and 'Delphi'. As evaluated in a spectroscopic ellipsometer in the 193.39nm wavelength, the 'Babylon' and 'Delphi' high index fluids were evaluated to have a refractive index of 1.64 and 1.63 with an absorption coefficient of 0.05/cm and 0.08/cm, respectively. Lithographic evaluation results using a 193-nm 2-beam interferometric exposure tool show the imaging capability of both high index fluids to be 32-nm half pitch lines and spaces.

  6. Ca(3-x)Srx(PO4)2:Eu2+ nanofibers: Electrospinning fabrication and tunable luminescence

    NASA Astrophysics Data System (ADS)

    Li, Bo; Zhang, He; Lan, Anyi; Tang, Hongxia

    2015-10-01

    Ca(3-x)Srx(PO4)2:2 mol%Eu2+ fibers were fabricated through the electrospinning process and followed by the calcination treatment. The fibers were characterized by XRD, SEM, TEM, and spectrophotometer. The XRD results showed that the obtained fibers have the whitlockite-related structure. The SEM and TEM images showed that the fibers with diameters about 100 nm are mesoporous and composed of fine and closely linked nanoparticles. Under the 365 nm UV light excitation, Ca(3-x)Srx(PO4)2:2 mol%Eu2+ fibers show emissions with different peak positions. The emission color is tunable from blue to green and to green-yellow in the visible region of the spectrum by varying the Sr/Ca ratios.

  7. NASA N3-X with Turboelectric Distributed Propulsion

    NASA Technical Reports Server (NTRS)

    Felder, James L.

    2014-01-01

    Presentation summarizing the phase I study of the NASA N3-X turboelectric distributed propulsion power aircraft to the IMechE Disruptive Green Propulsion Technologies conference in London, UK November 16th and 17th, 2014. This presentation contains the results of a NASA internal study funded by the NASA Fixed Wing program to look at the application of turboelectric distributed propulsion to a long-range 300 seat aircraft. The reference aircraft is the Boeing 777-200LR. The N3-X reduced energy consumption by 70 compared to the 777-200LR, LTO NOx by 85 compared to the CAEP 6 limits, and noise by 32-64 EPNdB depending on engine placement compared to the stage 4 noise standards. This exceeded the N+3 metrics of reducing energy by 60, LTO NOx by 80, and noise by 52 EPNdB. Cruise NOx was not estimated, but likely meet the 80 reduction goal as well.

  8. The lymph node neutrophil.

    PubMed

    Hampton, Henry R; Chtanova, Tatyana

    2016-04-01

    Secondary lymphoid organs provide a specialized microenvironment tailored to foster communication between cells of the innate and adaptive immune systems. These interactions allow immune cells to coordinate multilayered defense against pathogens. Until recently dendritic cells and macrophages were thought to comprise the main innate immune cell subsets responsible for delivering signals that drive the adaptive immune response, while the function of neutrophils was largely confined to the innate immune system. However, the discovery of neutrophils in lymph nodes has raised the question of whether neutrophils might play a more extensive role not only in innate immunity per se, but also in coordinating the interactions between innate and adaptive immune responses. In this review we discuss the mechanisms and consequences of neutrophil recruitment to lymph nodes and how this recruitment influences subsequent immune responses both in situ and at distant sites. PMID:27025975

  9. One node driving synchronisation

    NASA Astrophysics Data System (ADS)

    Wang, Chengwei; Grebogi, Celso; Baptista, Murilo S.

    2015-12-01

    Abrupt changes of behaviour in complex networks can be triggered by a single node. This work describes the dynamical fundamentals of how the behaviour of one node affects the whole network formed by coupled phase-oscillators with heterogeneous coupling strengths. The synchronisation of phase-oscillators is independent of the distribution of the natural frequencies, weakly depends on the network size, but highly depends on only one key oscillator whose ratio between its natural frequency in a rotating frame and its coupling strength is maximum. This result is based on a novel method to calculate the critical coupling strength with which the phase-oscillators emerge into frequency synchronisation. In addition, we put forward an analytical method to approximately calculate the phase-angles for the synchronous oscillators.

  10. One node driving synchronisation

    PubMed Central

    Wang, Chengwei; Grebogi, Celso; Baptista, Murilo S.

    2015-01-01

    Abrupt changes of behaviour in complex networks can be triggered by a single node. This work describes the dynamical fundamentals of how the behaviour of one node affects the whole network formed by coupled phase-oscillators with heterogeneous coupling strengths. The synchronisation of phase-oscillators is independent of the distribution of the natural frequencies, weakly depends on the network size, but highly depends on only one key oscillator whose ratio between its natural frequency in a rotating frame and its coupling strength is maximum. This result is based on a novel method to calculate the critical coupling strength with which the phase-oscillators emerge into frequency synchronisation. In addition, we put forward an analytical method to approximately calculate the phase-angles for the synchronous oscillators. PMID:26656718

  11. Global SO(3) x SO(3) x U(1) symmetry of the Hubbard model on bipartite lattices

    SciTech Connect

    Carmelo, J.M.P.; Ostlund, Stellan; Sampaio, M.J.

    2010-08-15

    In this paper the global symmetry of the Hubbard model on a bipartite lattice is found to be larger than SO(4). The model is one of the most studied many-particle quantum problems, yet except in one dimension it has no exact solution, so that there remain many open questions about its properties. Symmetry plays an important role in physics and often can be used to extract useful information on unsolved non-perturbative quantum problems. Specifically, here it is found that for on-site interaction U {ne} 0 the local SU(2) x SU(2) x U(1) gauge symmetry of the Hubbard model on a bipartite lattice with N{sub a}{sup D} sites and vanishing transfer integral t = 0 can be lifted to a global [SU(2) x SU(2) x U(1)]/Z{sub 2}{sup 2} = SO(3) x SO(3) x U(1) symmetry in the presence of the kinetic-energy hopping term of the Hamiltonian with t > 0. (Examples of a bipartite lattice are the D-dimensional cubic lattices of lattice constant a and edge length L = N{sub a}a for which D = 1, 2, 3,... in the number N{sub a}{sup D} of sites.) The generator of the new found hidden independent charge global U(1) symmetry, which is not related to the ordinary U(1) gauge subgroup of electromagnetism, is one half the rotated-electron number of singly occupied sites operator. Although addition of chemical-potential and magnetic-field operator terms to the model Hamiltonian lowers its symmetry, such terms commute with it. Therefore, its 4{sup N}{sub a}{sup D} energy eigenstates refer to representations of the new found global [SU(2) x SU(2) x U(1)]/Z{sub 2}{sup 2} = SO(3) x SO(3) x U(1) symmetry. Consistently, we find that for the Hubbard model on a bipartite lattice the number of independent representations of the group SO(3) x SO(3) x U(1) equals the Hilbert-space dimension 4{sup N}{sub a}{sup D}. It is confirmed elsewhere that the new found symmetry has important physical consequences.

  12. White-light emission from Li2Sr1-3 x/2Dy x SiO4 phosphors

    NASA Astrophysics Data System (ADS)

    Sun, Xin-Yuan; Lin, Liang-Wu; Wang, Wen-Feng; Zhang, Jun-Cheng

    2011-07-01

    Li2Sr1-3 x/2Dy x SiO4 phosphors were synthesized at 900°C in the normal atmosphere by a solid-state method. The synthesized phosphors were characterized by X-ray powder diffraction (XRD) and photoluminescence (PL) spectra. The photoluminescence excitation (PLE) spectra show excitation peaks ranging from 300 to 400 nm due to the 4 f-4 f transitions of Dy3+. This mercury-free excitation is useful for solid-state lighting and light-emitting diodes (LEDs). The predominant emission of Dy3+ ions under 349 nm excitation is observed at 479 nm (blue) due to the 4F9/2→6H15/2 transitions and 572 nm (yellow) due to 4F9/2→6H13/2 transitions, respectively. The PL results reveal that the optimal concentration of the Dy3+ ions in Li2Sr1-3 x/2Dy x SiO4 phosphors is x=0.03 mol. The nature of the resonance energy transfer for the Dy3+ ions is confirmed by Huang's rule. Simulation of the white light excited by 349 nm near-ultraviolet (n-UV) light is also performed for its potential for white LEDs.

  13. Revival of "dead" memristive devices: case of WO3-x.

    PubMed

    Tan, Zheng-Hua; Yang, Rui; Terabe, Kazuya; Yin, Xue-Bing; Guo, Xin

    2016-01-21

    Inappropriate operation could make a memristive device "dead" and cause the loss of resistive switching performance. In this study, the revival of "dead" devices was investigated in the case of WO3-x-based memristive devices. It is believed that inappropriate operation with a high-voltage pulse creates an ordered structure of oxygen vacancies and such an ordered structure makes the normal reset process fail. By precisely controlled voltage sweeping at certain compliance currents, a "dead" device can be revived. The revival operation disrupts the ordered structure by Joule heating and recovers Schottky-like barrier modulation-based switching. PMID:26685986

  14. Electron-induced single event upsets in 28 nm and 45 nm bulk SRAMs

    DOE PAGESBeta

    Trippe, J. M.; Reed, R. A.; Austin, R. A.; Sierawski, B. D.; Weller, R. A.; Funkhouser, E. D.; King, M. P.; Narasimham, B.; Bartz, B.; Baumann, R.; et al

    2015-12-01

    In this study, we present experimental evidence of single electron-induced upsets in commercial 28 nm and 45 nm CMOS SRAMs from a monoenergetic electron beam. Upsets were observed in both technology nodes when the SRAM was operated in a low power state. The experimental cross section depends strongly on both bias and technology node feature size, consistent with previous work in which SRAMs were irradiated with low energy muons and protons. Accompanying simulations demonstrate that δ-rays produced by the primary electrons are responsible for the observed upsets. Additional simulations predict the on-orbit event rates for various Earth and Jovian environmentsmore » for a set of sensitive volumes representative of current technology nodes. The electron contribution to the total upset rate for Earth environments is significant for critical charges as high as 0.2 fC. This value is comparable to that of sub-22 nm bulk SRAMs. Similarly, for the Jovian environment, the electron-induced upset rate is larger than the proton-induced upset rate for critical charges as high as 0.3 fC.« less

  15. Electron-induced single event upsets in 28 nm and 45 nm bulk SRAMs

    SciTech Connect

    Trippe, J. M.; Reed, R. A.; Austin, R. A.; Sierawski, B. D.; Weller, R. A.; Funkhouser, E. D.; King, M. P.; Narasimham, B.; Bartz, B.; Baumann, R.; Schrimpf, R. D.; Labello, R.; Nichols, J.; Weeden-Wright, S. L.

    2015-12-01

    In this study, we present experimental evidence of single electron-induced upsets in commercial 28 nm and 45 nm CMOS SRAMs from a monoenergetic electron beam. Upsets were observed in both technology nodes when the SRAM was operated in a low power state. The experimental cross section depends strongly on both bias and technology node feature size, consistent with previous work in which SRAMs were irradiated with low energy muons and protons. Accompanying simulations demonstrate that δ-rays produced by the primary electrons are responsible for the observed upsets. Additional simulations predict the on-orbit event rates for various Earth and Jovian environments for a set of sensitive volumes representative of current technology nodes. The electron contribution to the total upset rate for Earth environments is significant for critical charges as high as 0.2 fC. This value is comparable to that of sub-22 nm bulk SRAMs. Similarly, for the Jovian environment, the electron-induced upset rate is larger than the proton-induced upset rate for critical charges as high as 0.3 fC.

  16. Highly reproducible, efficient hysteresis-less CH3NH3PbI(3-x)Cl(x) planar hybrid solar cells without requiring heat-treatment.

    PubMed

    Heo, Jin Hyuck; Im, Sang Hyuk

    2016-02-01

    CH3NH3PbI(3-x)Cl(x)(MAPbI(3-x)Cl(x)) mixed halide perovskite powder with uniform composition was synthesized via simple solution chemistry, which demonstrates highly reproducible, efficient planar type MAPbI(3-x)Cl(x) mixed halide perovskite solar cells. Pure MAPbI(3-x)Cl(x) mixed halide perovskite powder was synthesized by reacting a 3 : 1 molar ratio of MAI : PbCl2 powder mixture in isopropanol (IPA) solution for 30 min at 60 °C with subsequent repeated centrifugation and washing in IPA. IPA functions as both the reaction medium for the formation of MAPbI(3-x)Cl(x) mixed halide and a selective remover of unreacted MAI and MACl byproducts. Accordingly, we could deposit a pinhole-free dense MAPbI(3-x)Cl(x) mixed halide perovskite film on a TiO2/FTO substrate through a simple one step spin-coating of pure MAPbI(3-x)Cl(x) mixed halide perovskite powder in DMF solution with HI additive, without further long heat-treatment processes. The deposited MAPbI(3-x)Cl(x) mixed halide perovskite film revealed uniform composition throughout the entire area, and the ratio of Cl to I + Cl and I + Cl to Pb was constant at ∼0.03 and ∼1/3, respectively. On the other hand, the conventional MAPbI(3-x)Cl(x) mixed halide perovskite film prepared by the long heat-treatment process had non-uniform composition because the ratio of Cl to I + Cl fluctuated greatly from 0 to 7.2. The average efficiency of planar type MAPbI(3-x)Cl(x) mixed halide perovskite solar cells was 18.65% ± 0.30% and the champion cell had 1.11 V V(oc), 22.1 mA cm(-2) J(sc), 77% F.F., and 18.9% η for forward scan conditions and 1.11 V V(oc), 22.1 mA cm(-2) J(sc), 78% F.F., and 19.1% η for reverse scan conditions. Although the thickness of the MAPbI(3-x)Cl(x) mixed halide perovskite layer varied from ∼500 nm to ∼900 nm, the efficiency was within the range of 18.3%-19.0%. PMID:26781644

  17. Right paraesophageal lymph node metastasis

    PubMed Central

    Shaha, Ashok R.

    2016-01-01

    Zhang1 and colleagues at Peking Union Medical College in Beijing have described their experience of dissecting the right paraesophageal lymph node metastasis and correlated the overall incidence to important prognostic factors of the primary tumor and lateral nodal metastasis. Zhang et al., reviewed their experience of 246 patients who underwent surgery for papillary thyroid carcinoma. They noted right paraesophageal lymph node metastasis (RPELN) in 33 patients (13.4%). Their multivariate analysis showed higher incidence of RPELN metastasis in patients with right sided tumor, 3 of more lateral positive lymph nodes and positive right central compartment nodes. The prevalence of RPELN metastasis was significantly higher (26%) in recurrent cases. PMID:26610750

  18. Compression in wearable sensor nodes: impacts of node topology.

    PubMed

    Imtiaz, Syed Anas; Casson, Alexander J; Rodriguez-Villegas, Esther

    2014-04-01

    Wearable sensor nodes monitoring the human body must operate autonomously for very long periods of time. Online and low-power data compression embedded within the sensor node is therefore essential to minimize data storage/transmission overheads. This paper presents a low-power MSP430 compressive sensing implementation for providing such compression, focusing particularly on the impact of the sensor node architecture on the compression performance. Compression power performance is compared for four different sensor nodes incorporating different strategies for wireless transmission/on-sensor-node local storage of data. The results demonstrate that the compressive sensing used must be designed differently depending on the underlying node topology, and that the compression strategy should not be guided only by signal processing considerations. We also provide a practical overview of state-of-the-art sensor node topologies. Wireless transmission of data is often preferred as it offers increased flexibility during use, but in general at the cost of increased power consumption. We demonstrate that wireless sensor nodes can highly benefit from the use of compressive sensing and now can achieve power consumptions comparable to, or better than, the use of local memory. PMID:24658233

  19. UV - ALBUQUERQUE NM

    EPA Science Inventory

    Brewer 109 is located in Albuquerque NM, measuring ultraviolet solar radiation. Irradiance and column ozone are derived from this data. Ultraviolet solar radiation is measured with a Brewer Mark IV, single-monochrometer, spectrophotometer manufactured by SCI-TEC Instruments, Inc....

  20. High-index nanocomposite photoresist for 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Bae, Woo Jin; Trikeriotis, Makros; Rodriguez, Robert; Zettel, Michael F.; Piscani, Emil; Ober, Christopher K.; Giannelis, Emmanuel P.; Zimmerman, Paul

    2009-03-01

    In immersion lithography, high index fluids are used to increase the numerical aperture (NA) of the imaging system and decrease the minimum printable feature size. Water has been used in first generation immersion lithography at 193 nm to reach the 45 nm node, but to reach the 38 and 32 nm nodes, fluids and resists with a higher index than water are needed. A critical issue hindering the implementation of 193i at the 32 nm node is the availability of high refractive index (n > 1.8) and low optical absorption fluids and resists. It is critical to note that high index resists are necessary only when a high refractive index fluid is in use. High index resist improves the depth of focus (DOF) even without high index fluids. In this study, high refractive index nanoparticles have been synthesized and introduced into a resist matrix to increase the overall refractive index. The strategy followed is to synthesize PGMEA-soluble nanoparticles and then disperse them into a 193 nm resist. High index nanoparticles 1-2 nm in diameter were synthesized by a combination of hydrolysis and sol-gel methods. A ligand exchange method was used, allowing the surface of the nanoparticles to be modified with photoresist-friendly moieties to help them disperse uniformly in the resist matrix. The refractive index and ultraviolet absorbance were measured to evaluate the quality of next generation immersion lithography resist materials.

  1. High-performance 193nm photoresists based on fluorosulfonamide

    NASA Astrophysics Data System (ADS)

    Li, Wenjie; Chen, Kuang-Jung; Kwong, Ranee; Lawson, Margaret C.; Khojasteh, Mahmoud; Popova, Irene; Varanasi, P. Rao; Shimokawa, Tsutomu; Yamaguchi, Yoshikazu; Kusumoto, Shiro; Sugiura, Makoto; Kawakami, Takanori; Slezak, Mark; Dabbagh, Gary; Liu, Zhi

    2007-03-01

    The combination of immersion lithography and reticle enhancement techniques (RETs) has extended 193nm lithography into the 45nm node and possibly beyond. In order to fulfill the tight pitch and small critical dimension requirements of these future technology nodes, the performance of 193nm resist materials needs to further improve. In this paper, a high performance 193nm photoresist system based on fluorosulfonamide (FSM) is designed and developed. The FSM group has good transparency at 193nm. Compared to the commonly used hexafluoroalcohol (HFA) group, the trifluoromethyl sulfonamide (TFSM) functionality has a lower pKa value and contains less fluorine atoms. Polymers containing the TFSM functionality have exhibited improved dissolution properties and better etch resistance than their HFA counterparts. Resists based on the FSM-containing polymers have shown superior lithographic performance for line, trench and contact hole levels under the 45nm node exposure conditions. In addition, FSM resists have also demonstrated excellent bright field and dark field compatibility and thereby make it possible to use one resist for both bright field and dark field level applications. The structure, property and lithographic performance of the FSM resist system are reported.

  2. Dynamics of chiral primaries in AdS{sub 3}xS{sup 3}xT{sup 4}

    SciTech Connect

    Donos, Aristomenis; Jevicki, Antal

    2006-04-15

    We study in more detail the dynamics of chiral primaries of the D1/D5 system. From the CFT given by the S{sub N} orbifold a study of correlators resulted in an interacting (collective) theory of chiral operators. In AdS{sub 3}xS{sup 3} SUGRA we concentrate on general 1/2 BPS configurations described in terms of a fundamental string. We first establish a correspondence with the linearized field fluctuations and then present the nonlinear analysis. We evaluate in detail the symplectic form of the general degrees of freedom in SUGRA and confirm the appearance of chiral bosons. We then discuss the appearance of interactions and the cubic vertex, in correspondence with the S{sub N} collective field theory representation.

  3. [Lymph node metastasis of osteosarcomas].

    PubMed

    Vasil'ev, N V

    2016-01-01

    Lymph node metastasis of osteosarcomas is a rather rare phenomenon; according to different authors, the incidence of lymph node metastasis is 4 to 11%. The detection of lymph node metastases in osteosarcoma is associated with a significant reduction in the 5-year survival of patients and allows its classification as clinical stage IV tumor. The risk factors for lymph node metastases in patients with bone sarcomas are age (≥64 years), gender (female), nosological entity (undifferentiated pleomorphic sarcoma, osteosarcoma, chondrosarcoma), tumor depth (muscle, bone), and the size of primary tumor (>5 сm). The mechanism of lymph node metastasis of osteosarcomas seems to be related to mesenchymal-to-epithelial transition. PMID:27600784

  4. Albuquerque, NM, USA

    NASA Technical Reports Server (NTRS)

    1991-01-01

    Albuquerque, NM (35.0N, 106.5W) is situated on the edge of the Rio Grande River and flood plain which cuts across the image. The reddish brown surface of the Albuquerque Basin is a fault depression filled with ancient alluvial fan and lake bed sediments. On the slopes of the Manzano Mountains to the east of Albuquerque, juniper and other timber of the Cibola National Forest can be seen as contrasting dark tones of vegetation.

  5. Substrate patterning with NiOx nanoparticles and hot-wire chemical vapour deposition of WO3x and carbon nanostructures

    NASA Astrophysics Data System (ADS)

    Houweling, Z. S.

    2011-10-01

    The first part of the thesis treats the formation of nickel catalyst nanoparticles. First, a patterning technique using colloids is employed to create ordered distributions of monodisperse nanoparticles. Second, nickel films are thermally dewetted, which produces mobile species that self-arrange in non-ordered distributions of polydisperse particles. Third, the mobility of the nickel species is successfully reduced by the addition of air during the dewetting and the use of a special anchoring layer. Thus, non-ordered distributions of self-arranged monodisperse nickel oxide nanoparticles (82±10 nm x 16±2 nm) are made. Studies on nickel thickness, dewetting time and dewetting temperature are conducted. With these particle templates, graphitic carbon nanotubes are synthesised using catalytic hot-wire chemical vapour deposition (HWCVD), demonstrating the high-temperature processability of the nanoparticles. The second part of this thesis treats the non-catalytic HWCVD of tungsten oxides (WO3-x). Resistively heated tungsten filaments exposed to an air flow at subatmospheric pressures, produce tungsten oxide vapour species, which are collected on substrates and are subsequently characterised. First, a complete study on the process conditions is conducted, whereby the effects of filament radiation, filament temperature, process gas pressure and substrate temperature, are investigated. The thus controlled growth of nanogranular smooth amorphous and crystalline WO3-x thin films is presented for the first time. Partially crystalline smooth hydrous WO3-x thin films consisting of 20 nm grains can be deposited at very high rates. The synthesis of ultrafine powders with particle sizes of about 7 nm and very high specific surface areas of 121.7±0.4 m2·g-1 at ultrahigh deposition rates of 36 µm·min-1, is presented. Using substrate heating to 600°C or more, while using air pressures of 3·10-5 mbar to 0.1 mbar, leads to pronounced crystal structures, from nanowires, to

  6. Highly reproducible, efficient hysteresis-less CH3NH3PbI3-xClx planar hybrid solar cells without requiring heat-treatment

    NASA Astrophysics Data System (ADS)

    Heo, Jin Hyuck; Im, Sang Hyuk

    2016-01-01

    CH3NH3PbI3-xClx(MAPbI3-xClx) mixed halide perovskite powder with uniform composition was synthesized via simple solution chemistry, which demonstrates highly reproducible, efficient planar type MAPbI3-xClx mixed halide perovskite solar cells. Pure MAPbI3-xClx mixed halide perovskite powder was synthesized by reacting a 3 : 1 molar ratio of MAI : PbCl2 powder mixture in isopropanol (IPA) solution for 30 min at 60 °C with subsequent repeated centrifugation and washing in IPA. IPA functions as both the reaction medium for the formation of MAPbI3-xClx mixed halide and a selective remover of unreacted MAI and MACl byproducts. Accordingly, we could deposit a pinhole-free dense MAPbI3-xClx mixed halide perovskite film on a TiO2/FTO substrate through a simple one step spin-coating of pure MAPbI3-xClx mixed halide perovskite powder in DMF solution with HI additive, without further long heat-treatment processes. The deposited MAPbI3-xClx mixed halide perovskite film revealed uniform composition throughout the entire area, and the ratio of Cl to I + Cl and I + Cl to Pb was constant at ~0.03 and ~1/3, respectively. On the other hand, the conventional MAPbI3-xClx mixed halide perovskite film prepared by the long heat-treatment process had non-uniform composition because the ratio of Cl to I + Cl fluctuated greatly from 0 to 7.2. The average efficiency of planar type MAPbI3-xClx mixed halide perovskite solar cells was 18.65% +/- 0.30% and the champion cell had 1.11 V Voc, 22.1 mA cm-2Jsc, 77% F.F., and 18.9% η for forward scan conditions and 1.11 V Voc, 22.1 mA cm-2Jsc, 78% F.F., and 19.1% η for reverse scan conditions. Although the thickness of the MAPbI3-xClx mixed halide perovskite layer varied from ~500 nm to ~900 nm, the efficiency was within the range of 18.3%-19.0%.CH3NH3PbI3-xClx(MAPbI3-xClx) mixed halide perovskite powder with uniform composition was synthesized via simple solution chemistry, which demonstrates highly reproducible, efficient planar type MAPbI3-x

  7. Connecting node and method for constructing a connecting node

    NASA Technical Reports Server (NTRS)

    Johnson, Christopher J. (Inventor); Raboin, Jasen L. (Inventor); Spexarth, Gary R. (Inventor)

    2011-01-01

    A connecting node comprises a polyhedral structure comprising a plurality of panels joined together at its side edges to form a spherical approximation, wherein at least one of the plurality of panels comprises a faceted surface being constructed with a passage for integrating with one of a plurality of elements comprising a docking port, a hatch, and a window that is attached to the connecting node. A method for manufacturing a connecting node comprises the steps of providing a plurality of panels, connecting the plurality of panels to form a spherical approximation, wherein each edge of each panel of the plurality is joined to another edge of another panel, and constructing at least one of the plurality of panels to include a passage for integrating at least one of a plurality of elements that may be attached to the connecting node.

  8. High-resolution core-level photoemission study of Eu-induced (3x2)/(3x4) reconstruction on Ge(111)

    SciTech Connect

    Kuzmin, M.; Peraelae, R. E.; Laukkanen, P.; Ahola-Tuomi, M.; Vaeyrynen, I. J.

    2006-09-15

    We have investigated Eu-induced Ge(111)-(3x2)/(3x4) reconstruction by high-resolution core-level photoelectron spectroscopy using synchrotron radiation and low-energy electron diffraction. Recent scanning tunneling microscopy (STM) observations [Phys. Rev. B 73, 125332 (2006)] revealed that the Ge arrangement of this reconstruction can be well described in terms of the honeycomb chain-channel (HCC) geometry proposed earlier for metal/Si(111)-(3x1) and -(3x2) surfaces; the Eu atoms, however, were found to reside at two different adsorption sites in the Eu/Ge(111)-(3x2)/(3x4) reconstruction, in contrast to the equivalent adsorption sites (e.g., T4) occupied in the case of Si. The present photoemission results provide further information about the atomic arrangement of Eu/Ge(111)-(3x2)/(3x4). In particular, we show that the Ge 3d core-level data cannot be interpreted by the HCC structure with the Eu atoms adsorbed only on T4 sites, giving a spectroscopic support for the suggestions based on the earlier STM data. We consider here a modified HCC-based configuration for the Eu/Ge(111)-(3x2)/(3x4) surface where the Eu atoms occupy two different sites in the empty channel between the neighboring Ge honeycomb chains. The atomic models are discussed in the context of the Ge 3d and Eu 4f data as well as the previous results available in the literature. Finally, we propose a structural model that allows us to account for the present photoemission and earlier STM findings.

  9. Lymph node mapping using quantum dot-labeled polymersomes.

    PubMed

    Bakalova, Rumiana; Zhelev, Zhivko; Nikolova, Biliana; Murayama, Shuhei; Lazarova, Desislava; Tsoneva, Iana; Aoki, Ichio

    2015-10-01

    The present study was designed to investigate whether poly-ion complex hollow vesicles (polymersomes), based on chemically-modified chitosan, are appropriate for lymph node mapping in the context of their application in the development of theranostic nanosized drug delivery systems (nano-DDS). The experiments were performed on Balb/c nude mice (colon cancer-grafted). The mice were subjected to anesthesia and quantum dot (QD(705))-labeled polymersomes (d-120 nm) were injected intravenously via the tail vein. The optical imaging was carried out on Maestro EX Imaging System (excitation filter: 435-480 nm; emission filter: 700 nm). A strong fluorescent signal, corresponding to QD(705) fluorescence, was detected in the lymph nodes, as well as in the tumor. A very weak fluorescent signal was found in the liver area. The half-life of QD(705)-labelled polymersomes was 6 ± 2 hours in the bloodstream and 11 ± 3 hours in the lymph nodes. The data suggest that polymersomes are very promising carriers for lymph node mapping using QD as a contrast agent. They are useful matrix for development of nano-formulations with theranostic capabilities. PMID:26221745

  10. Predicting Node Degree Centrality with the Node Prominence Profile

    NASA Astrophysics Data System (ADS)

    Yang, Yang; Dong, Yuxiao; Chawla, Nitesh V.

    2014-11-01

    Centrality of a node measures its relative importance within a network. There are a number of applications of centrality, including inferring the influence or success of an individual in a social network, and the resulting social network dynamics. While we can compute the centrality of any node in a given network snapshot, a number of applications are also interested in knowing the potential importance of an individual in the future. However, current centrality is not necessarily an effective predictor of future centrality. While there are different measures of centrality, we focus on degree centrality in this paper. We develop a method that reconciles preferential attachment and triadic closure to capture a node's prominence profile. We show that the proposed node prominence profile method is an effective predictor of degree centrality. Notably, our analysis reveals that individuals in the early stage of evolution display a distinctive and robust signature in degree centrality trend, adequately predicted by their prominence profile. We evaluate our work across four real-world social networks. Our findings have important implications for the applications that require prediction of a node's future degree centrality, as well as the study of social network dynamics.

  11. Predicting Node Degree Centrality with the Node Prominence Profile

    PubMed Central

    Yang, Yang; Dong, Yuxiao; Chawla, Nitesh V.

    2014-01-01

    Centrality of a node measures its relative importance within a network. There are a number of applications of centrality, including inferring the influence or success of an individual in a social network, and the resulting social network dynamics. While we can compute the centrality of any node in a given network snapshot, a number of applications are also interested in knowing the potential importance of an individual in the future. However, current centrality is not necessarily an effective predictor of future centrality. While there are different measures of centrality, we focus on degree centrality in this paper. We develop a method that reconciles preferential attachment and triadic closure to capture a node's prominence profile. We show that the proposed node prominence profile method is an effective predictor of degree centrality. Notably, our analysis reveals that individuals in the early stage of evolution display a distinctive and robust signature in degree centrality trend, adequately predicted by their prominence profile. We evaluate our work across four real-world social networks. Our findings have important implications for the applications that require prediction of a node's future degree centrality, as well as the study of social network dynamics. PMID:25429797

  12. Enhanced magnetization in VxFe3-xO4 nanoparticles

    NASA Astrophysics Data System (ADS)

    Pool, V. L.; Kleb, M. T.; Chorney, C. L.; Arenholz, E.; Idzerda, Y. U.

    2015-12-01

    Nanoparticles of VxFe3-xO4 with up to 33% vanadium doping (x=0 to 1) and a 9 nm diameter are investigated in order to determine the site preference of the vanadium and the magnetic behavior of the nanoparticles. The iron and vanadium L23-edge X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (MCD) spectra are used to identify that vanadium initially substitutes into the tetrahedral iron site as V3+ and that the average iron moment is observed to increase with vanadium concentration up to 12.5% (x=.375). When the vanadium incorporation exceeds 12.5%, the XAS and MCD show that the vanadium begins substituting as V2+ in the octahedral coordination. This coincides with a rapid reduction of the average moment to zero by 25% (x=.75). The frequency-dependent alternating-current magnetic susceptibility (ACMS) displays a substantial increase in blocking temperature with vanadium concentration and indicated substantial variation in the strength of inter-particle interactions.

  13. Eu(2+)-Activated Alkaline-Earth Halophosphates, M5(PO4)3X:Eu(2+) (M = Ca, Sr, Ba; X = F, Cl, Br) for NUV-LEDs: Site-Selective Crystal Field Effect.

    PubMed

    Kim, Donghyeon; Kim, Sung-Chul; Bae, Jong-Seong; Kim, Sungyun; Kim, Seung-Joo; Park, Jung-Chul

    2016-09-01

    Eu(2+)-activated M5(PO4)3X (M = Ca, Sr, Ba; X = F, Cl, Br) compounds providing different alkaline-earth metal and halide ions were successfully synthesized and characterized. The emission peak maxima of the M5(PO4)3Cl:Eu(2+) (M = Ca, Sr, Ba) compounds were blue-shifted from Ca to Ba (454 nm for Ca, 444 nm for Sr, and 434 nm for Ba), and those of the Sr5(PO4)3X:Eu(2+) (X = F, Cl, Br) compounds were red-shifted along the series of halides, F → Cl → Br (437 nm for F, 444 nm for Cl, and 448 nm for Br). The site selectivity and occupancy of the activator ions (Eu(2+)) in the M5(PO4)3X:Eu(2+) (M = Ca, Sr, Ba; X = F, Cl, Br) crystal lattices were estimated based on theoretical calculation of the 5d → 4f transition energies of Eu(2+) using LCAO. In combination with the photoluminescence measurements and theoretical calculation, it was elucidated that the Eu(2+) ions preferably enter the fully oxygen-coordinated sites in the M5(PO4)3X:Eu(2+) (M = Ca, Sr, Ba; X = F, Cl, Br) compounds. This trend can be well explained by "Pauling's rules". These compounds may provide a platform for modeling a new phosphor and application in the solid-state lighting field. PMID:27494550

  14. LCP nanoparticle for tumor and lymph node metastasis imaging

    NASA Astrophysics Data System (ADS)

    Tseng, Yu-Cheng

    A lipid/calcium/phosphate (LCP) nanoparticle formulation (particle diameter ˜25 nm) has previously been developed to delivery siRNA with superior efficiency. In this work, 111In was formulated into LCP nanoparticles to form 111In-LCP for SPECT/CT imaging. With necessary modifications and improvements of the LCP core-washing and surface-coating methods, 111In-LCP grafted with polyethylene glycol exhibited reduced uptake by the mononuclear phagocytic system. SPECT/CT imaging supported performed biodistribution studies, showing clear tumor images with accumulation of 8% or higher injected dose per gram tissue (ID/g) in subcutaneous, human-H460, lung-cancer xenograft and mouse-4T1, breast cancer metastasis models. Both the liver and the spleen accumulated ˜20% ID/g. Accumulation in the tumor was limited by the enhanced permeation and retention effect and was independent of the presence of a targeting ligand. A surprisingly high accumulation in the lymph nodes (˜70% ID/g) was observed. In the 4T1 lymph node metastasis model, the capability of intravenously injected 111In-LCP to visualize the size-enlarged and tumor-loaded sentinel lymph node was demonstrated. By analyzing the SPECT/CT images taken at different time points, the PK profiles of 111In-LCP in the blood and major organs were determined. The results indicated that the decrement of 111In-LCP blood concentration was not due to excretion, but to tissue penetration, leading to lymphatic accumulation. Larger LCP (diameter ˜65 nm) nanoparticles were also prepared for the purpose of comparison. Results indicated that larger LCP achieved slightly lower accumulation in the tumor and lymph nodes, but much higher accumulation in the liver and spleen; thus, larger nanoparticles might not be favorable for imaging purposes. We also demonstrated that LCP with a diameter of ˜25 nm were better able to penetrate into tissues, travel in the lymphatic system and preferentially accumulate in the lymph nodes due to 1) small

  15. Pulsed Lasers Employing Solution-Processed Plasmonic Cu3- x P Colloidal Nanocrystals.

    PubMed

    Liu, Zeke; Mu, Haoran; Xiao, Si; Wang, Rongbin; Wang, Zhiteng; Wang, Weiwei; Wang, Yongjie; Zhu, Xiangxiang; Lu, Kunyuan; Zhang, Han; Lee, Shuit-Tong; Bao, Qiaoliang; Ma, Wanli

    2016-05-01

    A new approach to synthesize self-doped colloidal Cu3-x P NCs with controlled size and localized surface plasmon resonance absorption is reported. These Cu3-x P NCs show ultrafast exciton dynamics and huge optical nonlinearities due to plasmonic resonances, which afford the first demonstration of plasmonic Cu3-x P NCs as simple, effective, and solution-processed nonlinear absorbers for high-energy Q-switched fiber laser. PMID:26970297

  16. Layout optimization with assist features placement by model based rule tables for 2x node random contact

    NASA Astrophysics Data System (ADS)

    Jun, Jinhyuck; Park, Minwoo; Park, Chanha; Yang, Hyunjo; Yim, Donggyu; Do, Munhoe; Lee, Dongchan; Kim, Taehoon; Choi, Junghoe; Luk-Pat, Gerard; Miloslavsky, Alex

    2015-03-01

    As the industry pushes to ever more complex illumination schemes to increase resolution for next generation memory and logic circuits, sub-resolution assist feature (SRAF) placement requirements become increasingly severe. Therefore device manufacturers are evaluating improvements in SRAF placement algorithms which do not sacrifice main feature (MF) patterning capability. There are known-well several methods to generate SRAF such as Rule based Assist Features (RBAF), Model Based Assist Features (MBAF) and Hybrid Assisted Features combining features of the different algorithms using both RBAF and MBAF. Rule Based Assist Features (RBAF) continue to be deployed, even with the availability of Model Based Assist Features (MBAF) and Inverse Lithography Technology (ILT). Certainly for the 3x nm node, and even at the 2x nm nodes and lower, RBAF is used because it demands less run time and provides better consistency. Since RBAF is needed now and in the future, what is also needed is a faster method to create the AF rule tables. The current method typically involves making masks and printing wafers that contain several experiments, varying the main feature configurations, AF configurations, dose conditions, and defocus conditions - this is a time consuming and expensive process. In addition, as the technology node shrinks, wafer process changes and source shape redesigns occur more frequently, escalating the cost of rule table creation. Furthermore, as the demand on process margin escalates, there is a greater need for multiple rule tables: each tailored to a specific set of main-feature configurations. Model Assisted Rule Tables(MART) creates a set of test patterns, and evaluates the simulated CD at nominal conditions, defocused conditions and off-dose conditions. It also uses lithographic simulation to evaluate the likelihood of AF printing. It then analyzes the simulation data to automatically create AF rule tables. It means that analysis results display the cost of

  17. Room-temperature and gram-scale synthesis of CsPbX3 (X = Cl, Br, I) perovskite nanocrystals with 50-85% photoluminescence quantum yields.

    PubMed

    Wei, Song; Yang, Yanchun; Kang, Xiaojiao; Wang, Lan; Huang, Lijian; Pan, Daocheng

    2016-05-26

    All inorganic CsPbX3 (X = Cl, Br, I) perovskite nanocrystals (PNCs) with 50-85% photoluminescence quantum yields and tunable emission in the range of 440-682 nm have been successfully synthesized at room temperature in open air. This facile strategy enables us to prepare gram-scale CsPbBr3 NCs with a PLQY approaching 80%. PMID:27180872

  18. Cancer-associated DDX3X mutations drive stress granule assembly and impair global translation.

    PubMed

    Valentin-Vega, Yasmine A; Wang, Yong-Dong; Parker, Matthew; Patmore, Deanna M; Kanagaraj, Anderson; Moore, Jennifer; Rusch, Michael; Finkelstein, David; Ellison, David W; Gilbertson, Richard J; Zhang, Jinghui; Kim, Hong Joo; Taylor, J Paul

    2016-01-01

    DDX3X is a DEAD-box RNA helicase that has been implicated in multiple aspects of RNA metabolism including translation initiation and the assembly of stress granules (SGs). Recent genomic studies have reported recurrent DDX3X mutations in numerous tumors including medulloblastoma (MB), but the physiological impact of these mutations is poorly understood. Here we show that a consistent feature of MB-associated mutations is SG hyper-assembly and concomitant translation impairment. We used CLIP-seq to obtain a comprehensive assessment of DDX3X binding targets and ribosome profiling for high-resolution assessment of global translation. Surprisingly, mutant DDX3X expression caused broad inhibition of translation that impacted DDX3X targeted and non-targeted mRNAs alike. Assessment of translation efficiency with single-cell resolution revealed that SG hyper-assembly correlated precisely with impaired global translation. SG hyper-assembly and translation impairment driven by mutant DDX3X were rescued by a genetic approach that limited SG assembly and by deletion of the N-terminal low complexity domain within DDX3X. Thus, in addition to a primary defect at the level of translation initiation caused by DDX3X mutation, SG assembly itself contributes to global translation inhibition. This work provides mechanistic insights into the consequences of cancer-related DDX3X mutations, suggesting that globally reduced translation may provide a context-dependent survival advantage that must be considered as a possible contributor to tumorigenesis. PMID:27180681

  19. Cancer-associated DDX3X mutations drive stress granule assembly and impair global translation

    PubMed Central

    Valentin-Vega, Yasmine A.; Wang, Yong-Dong; Parker, Matthew; Patmore, Deanna M.; Kanagaraj, Anderson; Moore, Jennifer; Rusch, Michael; Finkelstein, David; Ellison, David W.; Gilbertson, Richard J.; Zhang, Jinghui; Kim, Hong Joo; Taylor, J. Paul

    2016-01-01

    DDX3X is a DEAD-box RNA helicase that has been implicated in multiple aspects of RNA metabolism including translation initiation and the assembly of stress granules (SGs). Recent genomic studies have reported recurrent DDX3X mutations in numerous tumors including medulloblastoma (MB), but the physiological impact of these mutations is poorly understood. Here we show that a consistent feature of MB-associated mutations is SG hyper-assembly and concomitant translation impairment. We used CLIP-seq to obtain a comprehensive assessment of DDX3X binding targets and ribosome profiling for high-resolution assessment of global translation. Surprisingly, mutant DDX3X expression caused broad inhibition of translation that impacted DDX3X targeted and non-targeted mRNAs alike. Assessment of translation efficiency with single-cell resolution revealed that SG hyper-assembly correlated precisely with impaired global translation. SG hyper-assembly and translation impairment driven by mutant DDX3X were rescued by a genetic approach that limited SG assembly and by deletion of the N-terminal low complexity domain within DDX3X. Thus, in addition to a primary defect at the level of translation initiation caused by DDX3X mutation, SG assembly itself contributes to global translation inhibition. This work provides mechanistic insights into the consequences of cancer-related DDX3X mutations, suggesting that globally reduced translation may provide a context-dependent survival advantage that must be considered as a possible contributor to tumorigenesis. PMID:27180681

  20. Study of 193-nm resist degradation under various etch chemistries

    NASA Astrophysics Data System (ADS)

    Bazin, Arnaud; May, Michael; Pargon, Erwine; Mortini, Benedicte; Joubert, Olivier

    2007-03-01

    The effectivity of 193nm photoresists as dry etch masks is becoming more and more critical as the size of integrated devices shrinks. 193nm resists are known to be much less resistant to dry etching than 248nm resists based on a poly(hydroxystyrene) polymer backbone. The decrease in the resist film budget implies a better etch resistance to use single layer 193nm photoresists for the 65nm node and beyond. In spite of significant improvements made in the past decade regarding the etch resistance of photoresists, much of the fundamental chemistry and physics that could explain the behaviour of these materials has to be better understood. Such knowledge is necessary in order to propose materials and etch processes for the next technology nodes (45nm and below). In this paper, we report our studies on the etch behaviour of different 193nm resist materials as a function of etch chemistry. In a first step, we focus our attention on the interactions between photoresists and the reactive species of a plasma during a dry etch step. Etch experiments were carried out in a DPS (Decoupled Plasma Source) high density chamber. The gas chemistry in particular was changed to check the role of the plasma reactive species on the resist. O II, Cl II, CF 4, HBr and Ar gas were used. Etch rates and chemical modifications of different materials were quantified by ellipsometry, Fourier Transformed Infrared Spectroscopy (FTIR), and X-Ray Photoelectrons Spectroscopy (XPS). We evaluated different materials including 248nm model polymer backbones (pure PHS or functionalized PHS), and 193nm model polymers (PMMA and acrylate polymers) or resist formulations. Besides the influence of resist chemistry, the impact of plasma parameters was addressed.

  1. DDX3X Biomarker Correlates with Poor Survival in Human Gliomas

    PubMed Central

    Hueng, Dueng-Yuan; Tsai, Wen-Chiuan; Chiou, Hsin-Ying Clair; Feng, Shao-Wei; Lin, Chin; Li, Yao-Feng; Huang, Li-Chun; Lin, Ming-Hong

    2015-01-01

    Primary high-grade gliomas possess invasive growth and lead to unfavorable survival outcome. The investigation of biomarkers for prediction of survival outcome in patients with gliomas is important for clinical assessment. The DEAD (Asp-Glu-Ala-Asp) box helicase 3, X-linked (DDX3X) controls tumor migration, proliferation, and progression. However, the role of DDX3X in defining the pathological grading and survival outcome in patients with human gliomas is not yet clarified. We analyzed the DDX3X gene expression, WHO pathological grading, and overall survival from de-linked data. Further validation was done using quantitative RT-PCR of cDNA from normal brain and glioma, and immunohistochemical (IHC) staining of tissue microarray. Statistical analysis of GEO datasets showed that DDX3X mRNA expression demonstrated statistically higher in WHO grade IV (n = 81) than in non-tumor controls (n = 23, p = 1.13 × 10−10). Moreover, DDX3X level was also higher in WHO grade III (n = 19) than in non-tumor controls (p = 2.43 × 10−5). Kaplan–Meier survival analysis showed poor survival in patients with high DDX3X mRNA levels (n = 24) than in those with low DDX3X expression (n = 53) (median survival, 115 vs. 58 weeks, p = 0.0009, by log-rank test, hazard ratio: 0.3507, 95% CI: 0.1893–0.6496). Furthermore, DDX3X mRNA expression and protein production significantly increased in glioma cells compared with normal brain tissue examined by quantitative RT-PCR, and Western blot. IHC staining showed highly staining of high-grade glioma in comparison with normal brain tissue. Taken together, DDX3X expression level positively correlates with WHO pathologic grading and poor survival outcome, indicating that DDX3X is a valuable biomarker in human gliomas. PMID:26184164

  2. Binary 193nm photomasks aging phenomenon study

    NASA Astrophysics Data System (ADS)

    Dufaye, Félix; Sartelli, Luca; Pogliani, Carlo; Gough, Stuart; Sundermann, Frank; Miyashita, Hiroyuki; Hidenori, Yoshioka; Charras, Nathalie; Brochard, Christophe; Thivolle, Nicolas

    2011-05-01

    193nm binary photomasks are still used in the semiconductor industry for the lithography of some critical layers for the nodes 90nm and 65nm, with high volumes and over long period. These 193nm binary masks seem to be well-known but recent studies have shown surprising degrading effects, like Electric Field induced chromium Migration (EFM) [1] or chromium migration [2] [3] . Phase shift Masks (PSM) or Opaque MoSi On Glass (OMOG) might not be concerned by these effects [4] [6] under certain conditions. In this paper, we will focus our study on two layers gate and metal lines. We will detail the effects of mask aging, with SEM top view pictures revealing a degraded chromium edge profile and TEM chemical analyses demonstrating the growth of a chromium oxide on the sidewall. SEMCD measurements after volume production indicated a modified CD with respect to initial CD data after manufacture. A regression analysis of these CD measurements shows a radial effect, a die effect and an isolated-dense effect. Mask cleaning effectiveness has also been investigated, with sulphate or ozone cleans, to recover the mask quality in terms of CD. In complement, wafer intrafield CD measurements have been performed on the most sensitive structure to monitor the evolution of the aging effect on mask CD uniformity. Mask CD drift have been correlated with exposure dose drift and isolated-dense bias CD drift on wafers. In the end, we will try to propose a physical explanation of this aging phenomenon and a solution to prevent from it occurring.

  3. Elective ilioingunial lymph node irradiation

    SciTech Connect

    Henderson, R.H.; Parsons, J.T.; Morgan, L.; Million, R.R.

    1984-06-01

    Most radiologists accept that modest doses of irradiation (4500-5000 rad/4 1/2-5 weeks) can control subclinical regional lymph node metastases from squamous cell carcinomas of the head and neck and adenocarcinomas of the breast. There have been few reports concerning elective irradiation of the ilioinguinal region. Between October 1964 and March 1980, 91 patients whose primary cancers placed the ilioinguinal lymph nodes at risk received elective irradiation at the University of Florida. Included are patients with cancers of the vulva, penis, urethra, anus and lower anal canal, and cervix or vaginal cancers that involved the distal one-third of the vagina. In 81 patients, both inguinal areas were clinically negative; in 10 patients, one inguinal area was positive and the other negative by clinical examination. The single significant complication was a bilateral femoral neck fracture. The inguinal areas of four patients developed mild to moderate fibrosis. One patient with moderate fibrosis had bilateral mild leg edema that was questionably related to irradiation. Complications were dose-related. The advantages and dis-advantages of elective ilioinguinal node irradiation versus elective inguinal lymph node dissection or no elective treatment are discussed.

  4. SensorNet Node Suite

    2004-09-01

    The software in the SensorNet Node adopts and builds on IEEE 1451 interface principles to read data from and control sensors, stores the data in internal database structures, and transmits it in adapted Web Feature Services protocol packets to the SensorNet database. Failover software ensures that at least one available mode of communication remains alive.

  5. CONTEXT VIEW, SHOWING STRUCTURE NO. 57.3X (CULVERT) AT RIGHT AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    CONTEXT VIEW, SHOWING STRUCTURE NO. 57.3X (CULVERT) AT RIGHT AND STRUCTURE NO. 57.24X (BRIDGE) IN DISTANCE AT LEFT. MAIN TRACK 1 RUNS ALONG THE TOP OF THE FEATURES. VIEW TO THE SOUTHEAST. 12 - Burlington Northern Santa Fe Railroad, Cajon Subdivision, Structure No. 57.3X, Between Cajon Summit and Keenbrook, Devore, San Bernardino County, CA

  6. Combustion Synthesis of Sm0.5Sr0.5CoO3-x and La0.6Sr0.4CoO3-x Nanopowders for Solid Oxide Fuel Cell Cathodes

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P.; Zhong, zhimin

    2005-01-01

    Nanopowders of Sm0.5Sr0.5CoO(3-x) (SSC) and La0.6Sr0.4CoO(3-x) (LSC) compositions, which are being investigated as cathode materials for intermediate temperature solid oxide fuel cells, were synthesized by a solution-combustion method using metal nitrates and glycine as fuel. Development of crystalline phases in the as-synthesized powders after heat treatments at various temperatures was monitored by x-ray diffraction. Perovskite phase in LSC formed more readily than in SSC. Single phase perovskites were obtained after heat treatment of the combustion synthesized LSC and SSC powders at 1000 and 1200 C, respectively. The as-synthesized powders had an average particle size of 12 nm as determined from x-ray line broadening analysis using the Scherrer equation. Average grain size of the powders increased with increase in calcination temperature. Morphological analysis of the powders calcined at various temperatures was done by scanning electron microscopy.

  7. Validity of the Néel-Arrhenius model for highly anisotropic CoxFe3-xO4 nanoparticles

    NASA Astrophysics Data System (ADS)

    Torres, T. E.; Lima, E.; Mayoral, A.; Ibarra, A.; Marquina, C.; Ibarra, M. R.; Goya, G. F.

    2015-11-01

    We report a systematic study on the structural and magnetic properties of CoxFe3-xO4 magnetic nanoparticles with sizes between 5 and 25 nm, prepared by thermal decomposition of Fe(acac)3 and Co(acac)2. The large magneto-crystalline anisotropy of the synthesized particles resulted in high blocking temperatures (42 K < TB < 345 K for 5 < d < 13 nm) and large coercive fields (HC ≈ 1600 kA/m for T = 5 K). The smallest particles (⟨d⟩=5 nm) revealed the existence of a magnetically hard, spin-disordered surface. The thermal dependence of static and dynamic magnetic properties of the whole series of samples could be explained within the Neel-Arrhenius relaxation framework by including the thermal dependence of the magnetocrystalline anisotropy constant K1(T), without the need of ad-hoc corrections. This approach, using the empirical Brükhatov-Kirensky relation, provided K1(0) values very similar to the bulk material from either static or dynamic magnetic measurements, as well as realistic values for the response times (τ0 ≈ 10-10s). Deviations from the bulk anisotropy values found for the smallest particles could be qualitatively explained based on Zener's relation between K1(T) and M(T).

  8. Identifying node importance in complex networks

    NASA Astrophysics Data System (ADS)

    Hu, Ping; Fan, Wenli; Mei, Shengwei

    2015-07-01

    In this paper, we propose a novel node importance evaluation method from the perspective of the existence of mutual dependence among nodes. The node importance comprises its initial importance and the importance contributions from both the adjacent and non-adjacent nodes according to the dependence strength between them. From the simulation analyses on an example network and the ARPA network, we observe that our method can well identify the node importance. Then, the cascading failures on the Netscience and E-mail networks demonstrate that the networks are more vulnerable when continuously removing the important nodes identified by our method, which further proves the accuracy of our method.

  9. Controlling data transfers from an origin compute node to a target compute node

    DOEpatents

    Archer, Charles J.; Blocksome, Michael A.; Ratterman, Joseph D.; Smith, Brian E.

    2011-06-21

    Methods, apparatus, and products are disclosed for controlling data transfers from an origin compute node to a target compute node that include: receiving, by an application messaging module on the target compute node, an indication of a data transfer from an origin compute node to the target compute node; and administering, by the application messaging module on the target compute node, the data transfer using one or more messaging primitives of a system messaging module in dependence upon the indication.

  10. One-pot synthesis of PEGylated plasmonic MoO(3-x) hollow nanospheres for photoacoustic imaging guided chemo-photothermal combinational therapy of cancer.

    PubMed

    Bao, Tao; Yin, Wenyan; Zheng, Xiaopeng; Zhang, Xiao; Yu, Jie; Dong, Xinghua; Yong, Yuan; Gao, Fuping; Yan, Liang; Gu, Zhanjun; Zhao, Yuliang

    2016-01-01

    Engineering design of plasmonic nanomaterials as on-demand theranostic nanoagents with imaging, drug carrier, and photothermal therapy (PTT) functions have profound impact on treatment of cancer. Here, a facile 'one-pot' template-free hydrothermal route was firstly developed for synthesis of plasmonic oxygen deficiency molybdenum oxide hollow nanospheres functionalized by poly(ethylene glycol) (PEG-MoO(3-x) HNSs). The as-prepared PEG-MoO(3-x) HNSs not only have good biocompatibility but also exhibit obvious localized surface plasmon resonance (LSPR) absorption in the near-infrared (NIR) region. Especially, due to its intrinsic mesoporous properties and effective photothermal conversion efficiency upon 808-nm NIR laser irradiation, the PEG-MoO(3-x) HNSs can be applied as a pH/NIR laser dual-responsive camptothecin (CPT) drug delivery nanoplatform for chemotherapy as well as PTT to cancer cells. A remarkably improved synergistic therapeutic effect to pancreatic (PANC-1) tumor-bearing mice was obtained compared to the result of chemotherapy or PTT alone. Apart from its application for drug delivery, the PEG-MoO(3-x) HNSs can also be employed as an effective contrast nanoagent for photoacoustic (PAT) imaging because of its high NIR absorption, making it promising as a theranostic nanoagent for PAT imaging-guided chemo-photothermal combinational cancer therapy in the nanomedicine field. PMID:26517561

  11. Superparamagnetic versus blocked states in aggregates of Fe3-xO4 nanoparticles studied by MFM

    NASA Astrophysics Data System (ADS)

    Moya, Carlos; Iglesias-Freire, Óscar; Batlle, Xavier; Labarta, Amilcar; Asenjo, Agustina

    2015-10-01

    Magnetic domain configurations in two samples containing small aggregates of Fe3-xO4 nanoparticles of about 11 and 49 nm in size, respectively, were characterized by magnetic force microscopy (MFM). Two distinct magnetic behaviors were observed depending on the particle size. The aggregates constituted of nanoparticles of about 11 nm in size showed a uniform dark contrast on MFM images, reflecting the predominant superparamagnetic character of these particles and arising from the coherent rotation of the spins within the aggregate as the latter align along the tip stray-field. By applying a variable in-plane field, it is possible to induce magnetic polarization yielding an increasing dark/bright contrast as the strength of the applied field overcomes the stray-field of the tip, although this polarization completely disappears as the remanent state is recovered when the magnetic field is switched off. On the contrary, for aggregates of NPs of about 49 nm in size, dark/bright contrast associated with the existence of magnetic domains and magnetic polarization prevails in MFM images all along the magnetic cycle due to the blocking state of the magnetization of these larger particles, even in the absence of an applied field. All in all, we unambiguously demonstrate the capabilities of magnetic force microscopy to distinguish between blocked and superparamagnetic states in the aggregates of magnetic nanoparticles. Micromagnetic simulations strongly support the conclusions stated from the MFM experiments.Magnetic domain configurations in two samples containing small aggregates of Fe3-xO4 nanoparticles of about 11 and 49 nm in size, respectively, were characterized by magnetic force microscopy (MFM). Two distinct magnetic behaviors were observed depending on the particle size. The aggregates constituted of nanoparticles of about 11 nm in size showed a uniform dark contrast on MFM images, reflecting the predominant superparamagnetic character of these particles and arising

  12. New electron optics for mask writer EBM-7000 to challenge hp 32nm generation

    NASA Astrophysics Data System (ADS)

    Kamikubo, Takashi; Golladay, Steven; Kendall, Rodney; Katsap, Victor; Ohtoshi, Kenji; Ogasawara, Munehiro; Nishimura, Shinsuke; Nishimura, Rieko; Iizuka, Osamu; Nakayama, Takahito; Shinkawa, Shunji; Nishiyama, Tetsurou; Tamamushi, Shuichi

    2008-10-01

    Semiconductor scaling is expected to continue to hp32nm and beyond, accompanied by explosive data volume expansion. Required minimum feature size at hp 32nm will be less than 50nm on the mask, according to ITRS2007(1). EBM 7000 is a newly designed mask writer for the hp32 nm node with an improved electron optical column providing the beam resolution (10 nm measured in situ) and beam current density (200 A/cm2) necessary for cost effective mask production at hp32nm node. In this paper we report on column improvements, the in situ beam blur measurement method and writing results from EBM 7000. Written patterns show dose margin (CD change [nm] / 1 % dose change) of .94 nm /1 % dose for line/space arrays using chemically amplified resist PRL009 and our standard processing. Using a simple model to relate the measured beam intensity distribution to the measured dose margin, we infer an effective total blur of 30 nm, dominated by a contribution of 28 nm from the resist exposure and development process. Further evidence of the dominance of the process contribution is the measured improvement in dose margin to .64 nm/% dose obtained by modifying our standard process. Even larger process improvements will be needed for successful fabrication of hp22nm masks.

  13. Comparison of Raw Acceleration from the GENEA and ActiGraph™ GT3X+ Activity Monitors

    PubMed Central

    John, Dinesh; Sasaki, Jeffer; Staudenmayer, John; Mavilia, Marianna; Freedson, Patty S.

    2013-01-01

    Purpose: To compare raw acceleration output of the ActiGraph™ GT3X+ and GENEA activity monitors. Methods: A GT3X+ and GENEA were oscillated in an orbital shaker at frequencies ranging from 0.7 to 4.0 Hz (ten 2-min trials/frequency) on a fixed radius of 5.08 cm. Additionally, 10 participants (age = 23.8 ± 5.4 years) wore the GT3X+ and GENEA on the dominant wrist and performed treadmill walking (2.0 and 3.5 mph) and running (5.5 and 7.5 mph) and simulated free-living activities (computer work, cleaning a room, vacuuming and throwing a ball) for 2-min each. A linear mixed model was used to compare the mean triaxial vector magnitude (VM) from the GT3X+ and GENEA at each oscillation frequency. For the human testing protocol, random forest machine-learning technique was used to develop two models using frequency domain (FD) and time domain (TD) features for each monitor. We compared activity type recognition accuracy between the GT3X+ and GENEA when the prediction model was fit using one monitor and then applied to the other. Z-statistics were used to compare the proportion of accurate predictions from the GT3X+ and GENEA for each model. Results: GENEA produced significantly higher (p < 0.05, 3.5 to 6.2%) mean VM than GT3X+ at all frequencies during shaker testing. Training the model using TD input features on the GENEA and applied to GT3X+ data yielded significantly lower (p < 0.05) prediction accuracy. Prediction accuracy was not compromised when interchangeably using FD models between monitors. Conclusions: It may be inappropriate to apply a model developed on the GENEA to predict activity type using GT3X+ data when input features are TD attributes of raw acceleration. PMID:24177727

  14. Sinus Node and Atrial Arrhythmias.

    PubMed

    John, Roy M; Kumar, Saurabh

    2016-05-10

    Although sinus node dysfunction (SND) and atrial arrhythmias frequently coexist and interact, the putative mechanism linking the 2 remain unclear. Although SND is accompanied by atrial myocardial structural changes in the right atrium, atrial fibrillation (AF) is a disease of variable interactions between left atrial triggers and substrate most commonly of left atrial origin. Significant advances have been made in our understanding of the genetic and pathophysiologic mechanism underlying the development and progression of SND and AF. Although some patients manifest SND as a result of electric remodeling induced by periods of AF, others develop progressive atrial structural remodeling that gives rise to both conditions together. The treatment strategy will thus vary according to the predominant disease phenotype. Although catheter ablation will benefit patients with predominantly AF and secondary SND, cardiac pacing may be the mainstay of therapy for patients with predominant fibrotic atrial cardiomyopathy. This contemporary review summarizes current knowledge on sinus node pathophysiology with the broader goal of yielding insights into the complex relationship between sinus node disease and atrial arrhythmias. PMID:27166347

  15. Underwater Sensor Nodes and Networks

    PubMed Central

    Lloret, Jaime

    2013-01-01

    Sensor technology has matured enough to be used in any type of environment. The appearance of new physical sensors has increased the range of environmental parameters for gathering data. Because of the huge amount of unexploited resources in the ocean environment, there is a need of new research in the field of sensors and sensor networks. This special issue is focused on collecting recent advances on underwater sensors and underwater sensor networks in order to measure, monitor, surveillance of and control of underwater environments. On the one hand, from the sensor node perspective, we will see works related with the deployment of physical sensors, development of sensor nodes and transceivers for sensor nodes, sensor measurement analysis and several issues such as layer 1 and 2 protocols for underwater communication and sensor localization and positioning systems. On the other hand, from the sensor network perspective, we will see several architectures and protocols for underwater environments and analysis concerning sensor network measurements. Both sides will provide us a complete view of last scientific advances in this research field. PMID:24013489

  16. Planar Fully-Depleted-Silicon-On-Insulator technologies: Toward the 28 nm node and beyond

    NASA Astrophysics Data System (ADS)

    Doris, B.; DeSalvo, B.; Cheng, K.; Morin, P.; Vinet, M.

    2016-03-01

    This paper presents a comprehensive overview of the research done in the last decade on planar Fully-Depleted-Silicon-On-Insulator (FDSOI) technologies in the frame of the joint development program between IBM, ST Microelectronics and CEA-LETI. In particular, we review the technological developments ranging from substrate engineering to process modules that enable functionality and improve FDSOI performance over several generations. Various multi Vt integration schemes to maximize the benefits of the thin BOX FDSOI platform are discussed. Manufacturability as well as scalability concerns are highlighted and addressed. In addition, this work provides understanding of the performance/power trade-offs for FDSOI circuits and device variability. Finally, clear directions for future application-specific products are given, demonstrating that FDSOI is an attractive CMOS option for next generation high performance and low-power applications.

  17. Order-disorder transition of the (3 x 3) Sn/Ge(111) phase

    SciTech Connect

    Floreano, L.; Cvetko, D.; Bavdek, G.; Benes, M.; Morgante, A.

    2001-08-15

    We have measured the long-range order of the {alpha} phase of Sn on the Ge(111) surface throughout the (3 x 3){yields}(3 x 3)R30{sup o} phase transition. The transition has been found of the order-disorder type with a critical temperature T{sub c}{approx}220 K. The expected three-state Potts critical exponents are shown to be consistent with the observed power-law dependence of the (3 x 3) order parameter and its correlation length close to T{sub c}, thus excluding a charge-density wave driven phase transition.

  18. Faster qualification of 193-nm resists for 100-nm development using photo cell monitoring

    NASA Astrophysics Data System (ADS)

    Jones, Chris M.; Kallingal, Chidam; Zawadzki, Mary T.; Jeewakhan, Nazneen N.; Kaviani, Nazila N.; Krishnan, Prakash; Klaum, Arthur D.; Van Ess, Joel

    2003-05-01

    The development of 100-nm design rule technologies is currently taking place in many R&D facilities across the world. For some critical alyers, the transition to 193-nm resist technology has been required to meet this leading edge design rule. As with previous technology node transitions, the materials and processes available are undergoing changes and improvements as vendors encounter and solve problems. The initial implementation of the 193-nm resits process did not meet the photolithography requirements of some IC manufacturers due to very high Post Exposure Bake temperature sensitivity and consequently high wafer to wafer CD variation. The photoresist vendors have been working to improve the performance of the 193-nm resists to meet their customer's requirements. Characterization of these new resists needs to be carried out prior to implementation in the R&D line. Initial results on the second-generation resists evaluated at Cypress Semicondcutor showed better CD control compared to the aelrier resist with comparable Depth of Focus (DOF), Exposure Latitute, Etch Resistance, etc. In addition to the standard lithography parameters, resist characterization needs to include defect density studies. It was found that the new resists process with the best CD control, resulted in the introduction of orders of magnitude higher yield limiting defects at Gate, Contact adn Local Interconnect. The defect data were shared with the resists vendor and within days of the discovery the resist vendor was able to pinpoint the source of the problem. The fix was confirmed and the new resists were successfully released to production. By including defect monitoring into the resist qualification process, Cypress Semiconductor was able to 1) drive correction actions earlier resulting in faster ramp and 2) eliminate potential yield loss. We will discuss in this paper how to apply the Micro Photo Cell Monitoring methodology for defect monitoring in the photolithogprhay module and the

  19. Axillary Lymph Nodes and Breast Cancer

    MedlinePlus

    ... more likely to affect arm function and cause lymphedema. For this reason, sentinel node biopsy is the ... OR supraclavicular (above the clavicle) nodes have cancer Lymphedema Lymphedema [lim-fa-DEE-ma] is a build- ...

  20. 32nm design rule and process exploration flow

    NASA Astrophysics Data System (ADS)

    Zhang, Yunqiang; Cobb, Jonathan; Yang, Amy; Li, Ji; Lucas, Kevin; Sethi, Satyendra

    2008-10-01

    Semiconductor manufacturers spend hundreds of millions of dollars and years of development time to create a new manufacturing process and to design frontrunner products to work on the new process. A considerable percentage of this large investment is aimed at producing the process design rules and related lithography technology to pattern the new products successfully. Significant additional cost and time is needed in both process and design development if the design rules or lithography strategy must be modified. Therefore, early and accurate prediction of both process design rules and lithography options is necessary for minimizing cost and timing in semiconductor development. This paper describes a methodology to determine the optimum design rules and lithography conditions with high accuracy early in the development lifecycle. We present results from the 32nm logic node but the methodology can be extended to the 22nm node or any other node. This work involves: automated generation of extended realistic logic test layouts utilizing programmed teststructures for a variety of design rules; determining a range of optical illumination and process conditions to test for each critical design layer; using these illumination conditions to create a extrapolatable process window OPC model which is matched to rigorous TCAD lithography focus-exposure full chemically amplified resist models; creating reticle enhancement technique (RET) recipes which are flexible enough to be used over a variety of design rule and illumination conditions; OPC recipes which are flexible enough to be used over a variety of design rule and illumination conditions; and OPC verification to find, categorize and report all patterning issues found in the different design and illumination variations. In this work we describe in detail the individual steps in the methodology, and provide results of its use for 32nm node design rule and process optimization.

  1. A novel double patterning approach for 30nm dense holes

    NASA Astrophysics Data System (ADS)

    Hsu, Dennis Shu-Hao; Wang, Walter; Hsieh, Wei-Hsien; Huang, Chun-Yen; Wu, Wen-Bin; Shih, Chiang-Lin; Shih, Steven

    2011-04-01

    Double Patterning Technology (DPT) was commonly accepted as the major workhorse beyond water immersion lithography for sub-38nm half-pitch line patterning before the EUV production. For dense hole patterning, classical DPT employs self-aligned spacer deposition and uses the intersection of horizontal and vertical lines to define the desired hole patterns. However, the increase in manufacturing cost and process complexity is tremendous. Several innovative approaches have been proposed and experimented to address the manufacturing and technical challenges. A novel process of double patterned pillars combined image reverse will be proposed for the realization of low cost dense holes in 30nm node DRAM. The nature of pillar formation lithography provides much better optical contrast compared to the counterpart hole patterning with similar CD requirements. By the utilization of a reliable freezing process, double patterned pillars can be readily implemented. A novel image reverse process at the last stage defines the hole patterns with high fidelity. In this paper, several freezing processes for the construction of the double patterned pillars were tested and compared, and 30nm double patterning pillars were demonstrated successfully. A variety of different image reverse processes will be investigated and discussed for their pros and cons. An economic approach with the optimized lithography performance will be proposed for the application of 30nm DRAM node.

  2. T.Node, industrial version of supernode

    NASA Astrophysics Data System (ADS)

    Flieller, Sylvain

    1989-12-01

    The Esprit I P1085 "SuperNode" project developed a modular reconfigurable archtecture, based on transputers. This highly parallel machine is now marketed by Telmat Informatique under the name T.Node. This paper presents the P1085 project, the architecture of SuperNode, its industrial implementation and its software enviroment.

  3. Epitaxial growth and piezoelectric characterization of the (1-x)BiScO{sub 3}-(x)PbTiO{sub 3} ultrathin film

    SciTech Connect

    Wu, Youngsoo; Jin, Yeryeong; Kim, Bongju; Kwon, Daeyoung; Kim, Bog G.

    2011-03-15

    We studied ferroelectric properties of morphotropic phase boundary (1-x)BiScO{sub 3}-(x)PbTiO{sub 3} (BSPT, x = 0.64) epitaxial thin films on SrTiO{sub 3} (001) and Nb:SrTiO{sub 3} (001). BSPT thin films with various thicknesses were deposited using off-axis radio frequency magnetron sputtering. By analyzing x-ray data of BSPT thin films with various thicknesses, we confirmed that films thinner than {approx}22 nm were in a strained state. Films thicker than {approx}22 nm were in a relaxed state because of the strain relaxation mechanism caused by misfit dislocation formation. Clear piezoresponses and polarization reversal phenomena can be observed in the ultrathin limit down to 8 nm through Piezo Force Microscope experiments. The piezoresponse data as a function of thickness correlates with the structural modification of thin films.

  4. Soft X-Ray Microscopy and EUV Lithography: An Update on Imaging at 20-40 nm Spatial Resolution

    NASA Astrophysics Data System (ADS)

    Attwood, D.; Anderson, E.; Denbeaux, G.; Goldberg, K.; Naulleau, P.; Schneider, G.

    2002-11-01

    Major advances in both soft x-ray microscopy, at wavelengths from 0.6 to 4 nm, and EUV lithography, at wavelengths between 13 and 14 nm, are reviewed. In the XRL-2000 proceedings we reported soft x-ray microscopy resolved to 25 nm, in static two-dimensional imaging, with applications to biology, magnetic materials, and various "wet" environmental samples. In this 2002 update we report significant extensions to three-dimensional tomographic imaging, dynamical studies of magnetic and electronic devices, and static two-dimensional microscopy poised for extension to below 20 nm spatial resolution. In the XRL-2000 proceedings we reported EUV lithographic imaging of 50 nm lines/100 nm spaces in static microfield (approx100 mum) exposures. In this 2002 update we report scanned full-field (25 mm by 32 mm) images at better than 100 nm lines/100 nm spaces, static microfield exposures down to 50 nm lines/50 nm spaces, and isolated lines to 39 nm wide at 0.1 NA. With soon to be available 0.3 NA optics, we expect to print isolated lines, in static micro exposures, at 16-20 nm width in 2003. These results will demonstrate EUV lithography's ability to meet not only the ITRS Roadmap 45 nm node (26 nm isolated lines in resist) in 2007, but also the 32 nm node (18 nm isolated lines in resist) in 2009, both of which the semiconductor industry is now preparing for.

  5. 469nm Fiber Laser Source

    SciTech Connect

    Drobshoff, A; Dawson, J W; Pennington, D M; Payne, S A; Beach, R

    2005-01-20

    We have demonstrated 466mW of 469nm light from a frequency doubled continuous wave fiber laser. The system consisted of a 938nm single frequency laser diode master oscillator, which was amplified in two stages to 5 Watts using cladding pumped Nd{sup 3+} fiber amplifiers and then frequency doubled in a single pass through periodically poled KTP. The 3cm long PPKTP crystal was made by Raicol Crystals Ltd. with a period of 5.9 {micro}m and had a phase match temperature of 47 degrees Centigrade. The beam was focused to a 1/e{sup 2} diameter in the crystal of 29 {micro}m. Overall conversion efficiency was 11% and the results agreed well with standard models. Our 938nm fiber amplifier design minimizes amplified spontaneous emission at 1088nm by employing an optimized core to cladding size ratio. This design allows the 3-level transition to operate at high inversion, thus making it competitive with the 1088nm 4-level transition. We have also carefully chosen the fiber coil diameter to help suppress propagation of wavelengths longer than 938 nm. At 2 Watts, the 938nm laser had an M{sup 2} of 1.1 and good polarization (correctable with a quarter and half wave plate to >10:1).

  6. Novel EUV resist development for sub-14nm half pitch

    NASA Astrophysics Data System (ADS)

    Hori, Masafumi; Naruoka, Takehiko; Nakagawa, Hisashi; Fujisawa, Tomohisa; Kimoto, Takakazu; Shiratani, Motohiro; Nagai, Tomoki; Ayothi, Ramakrishnan; Hishiro, Yoshi; Hoshiko, Kenji; Kimura, Toru

    2015-03-01

    Extreme ultraviolet (EUV) lithography has emerged as a promising candidate for the manufacturing of semiconductor devices at the sub-14nm half pitch lines and spaces (LS) pattern for 7 nm node and beyond. The success of EUV lithography for the high volume manufacturing of semiconductor devices depends on the availability of suitable resist with high resolution and sensitivity. It is well-known that the key challenge for EUV resist is the simultaneous requirement of ultrahigh resolution (R), low line edge roughness (L) and high sensitivity (S). In this paper, we investigated and developed new chemically amplified resist (CAR) materials to achieve sub-14 nm hp resolution. We found that both resolution and sensitivity were improved simultaneously by controlling acid diffusion length and efficiency of acid generation using novel PAG and sensitizer. EUV lithography evaluation results obtained for new CAR on Micro Exposure Tool (MET) and NXE3300 system are described and the fundamentals are discussed.

  7. Black sentinel lymph node and 'scary stickers'.

    PubMed

    Yang, Arthur S; Creagh, Terrence A

    2013-04-01

    An unusual case is presented of a young adult patient with two black-stained, radio-nucleotide tracer-active sentinel lymph nodes biopsied following her primary cutaneous melanoma treatment. This was subsequently confirmed to be secondary to cutaneous tattoos, averting the need of an elective regional node dissection. History of tattooing and tattoo removal should therefore be obtained as a routine in all melanoma patients considered for sentinel node biopsy (SLN). SLN biopsy and any subsequent completion node dissection should be strictly staged so that proper histologic diagnosis of the sentinel node is available for correct decision making and treatment. PMID:23010587

  8. Untraceable Mobile Node Authentication in WSN

    PubMed Central

    Han, Kyusuk; Kim, Kwangjo; Shon, Taeshik

    2010-01-01

    Mobility of sensor node in Wireless Sensor Networks (WSN) brings security issues such as re-authentication and tracing the node movement. However, current security researches on WSN are insufficient to support such environments since their designs only considered the static environments. In this paper, we propose the efficient node authentication and key exchange protocol that reduces the overhead in node re-authentication and also provides untraceability of mobile nodes. Compared with previous protocols, our protocol has only a third of communication and computational overhead. We expect our protocol to be the efficient solution that increases the lifetime of sensor network. PMID:22399886

  9. Approach to intensely enhancing neck nodes

    PubMed Central

    Karandikar, Amit; Gummalla, Krishna Mohan; Loke, Siu Cheng; Goh, Julian; Tan, Tiong Yong

    2016-01-01

    Cervical node evaluation is one of the most common problems encountered by a radiologist. Here, we present a pictorial review of intensely enhancing neck nodes. While enhancement in a cervical node is a common radiologic finding on contrast-enhanced computed tomography scan, only few conditions cause intense enhancement in cervical nodes. We discuss the common causes of intensely enhancing neck nodes along with pertinent radiologic features and key differentiating points that aid radiologists in reaching a diagnosis. In addition, we discuss certain potential non-nodal mimics, which need to be excluded. PMID:26782154

  10. Node assignment in heterogeneous computing

    NASA Technical Reports Server (NTRS)

    Som, Sukhamoy

    1993-01-01

    A number of node assignment schemes, both static and dynamic, are explored for the Algorithm to Architecture Mapping Model (ATAMM). The architecture under consideration consists of heterogeneous processors and implements dataflow models of real-time applications. Terminology is developed for heterogeneous computing. New definitions are added to the ATAMM for token and assignment classifications. It is proved that a periodic execution is possible for dataflow graphs. Assignment algorithms are developed and proved. A design procedure is described for satisfying an objective function in an heterogeneous architecture. Several examples are provided for illustration.

  11. Full-field imprinting of sub-40 nm patterns

    NASA Astrophysics Data System (ADS)

    Yeo, Jeongho; Kim, Hoyeon; Eynon, Ben

    2008-03-01

    Imprint lithography has been included on the ITRS Lithography Roadmap at the 32, 22 and 16 nm nodes. Step and Flash Imprint Lithography (S-FIL (R)) is a unique patterning method that has been designed from the beginning to enable precise overlay to enable multilevel device fabrication. A photocurable low viscosity resist is dispensed dropwise to match the pattern density requirements of the device, thus enabling patterning with a uniform residual layer thickness across a field and across multiple wafers. Further, S-FIL provides sub-50 nm feature resolution without the significant expense of multi-element projection optics or advanced illumination sources. However, since the technology is 1X, it is critical to address the infrastructure associated with the fabrication of imprint masks (templates). For sub-32 nm device manufacturing, one of the major technical challenges remains the fabrication of full-field 1x imprint masks with commercially viable write times. Recent progress in the writing of sub-40 nm patterns using commercial variable shape e-beam tools and non-chemically amplified resists has demonstrated a very promising route to realizing these objectives, and in doing so, has considerably strengthened imprint lithography as a competitive manufacturing technology for the sub-32nm node. Here we report the first imprinting results from sub-40 nm full-field patterns, using Samsung's current flash memory production device design. The fabrication of the imprint mask and the resulting critical dimension control and uniformity are discussed, along with image placement results. The imprinting results are described in terms of CD uniformity, etch results, and overlay.

  12. 32 nm imprint masks using variable shape beam pattern generators

    NASA Astrophysics Data System (ADS)

    Selinidis, Kosta; Thompson, Ecron; Schmid, Gerard; Stacey, Nick; Perez, Joseph; Maltabes, John; Resnick, Douglas J.; Yeo, Jeongho; Kim, Hoyeon; Eynon, Ben

    2008-05-01

    Imprint lithography has been included on the ITRS Lithography Roadmap at the 32, 22 and 16 nm nodes. Step and Flash Imprint Lithography (S-FIL ®) is a unique method that has been designed from the beginning to enable precise overlay for creating multilevel devices. A photocurable low viscosity monomer is dispensed dropwise to meet the pattern density requirements of the device, thus enabling imprint patterning with a uniform residual layer across a field and across entire wafers. Further, S-FIL provides sub-100 nm feature resolution without the significant expense of multi-element, high quality projection optics or advanced illumination sources. However, since the technology is 1X, it is critical to address the infrastructure associated with the fabrication of templates. For sub-32 nm device manufacturing, one of the major technical challenges remains the fabrication of full-field 1x templates with commercially viable write times. Recent progress in the writing of sub-40 nm patterns using commercial variable shape e-beam tools and non-chemically amplified resists has demonstrated a very promising route to realizing these objectives, and in doing so, has considerably strengthened imprint lithography as a competitive manufacturing technology for the sub 32nm node. Here we report the first imprinting results from sub-40 nm full-field patterns, using Samsung's current flash memory production device design. The fabrication of the template is discussed and the resulting critical dimension control and uniformity are discussed, along with image placement results. The imprinting results are described in terms of CD uniformity, etch results, and overlay.

  13. Targeted Delivery of Immunomodulators to Lymph Nodes.

    PubMed

    Azzi, Jamil; Yin, Qian; Uehara, Mayuko; Ohori, Shunsuke; Tang, Li; Cai, Kaimin; Ichimura, Takaharu; McGrath, Martina; Maarouf, Omar; Kefaloyianni, Eirini; Loughhead, Scott; Petr, Jarolim; Sun, Qidi; Kwon, Mincheol; Tullius, Stefan; von Andrian, Ulrich H; Cheng, Jianjun; Abdi, Reza

    2016-05-10

    Active-targeted delivery to lymph nodes represents a major advance toward more effective treatment of immune-mediated disease. The MECA79 antibody recognizes peripheral node addressin molecules expressed by high endothelial venules of lymph nodes. By mimicking lymphocyte trafficking to the lymph nodes, we have engineered MECA79-coated microparticles containing an immunosuppressive medication, tacrolimus. Following intravenous administration, MECA79-bearing particles showed marked accumulation in the draining lymph nodes of transplanted animals. Using an allograft heart transplant model, we show that targeted lymph node delivery of microparticles containing tacrolimus can prolong heart allograft survival with negligible changes in tacrolimus serum level. Using MECA79 conjugation, we have demonstrated targeted delivery of tacrolimus to the lymph nodes following systemic administration, with the capacity for immune modulation in vivo. PMID:27134176

  14. Dedicated heterogeneous node scheduling including backfill scheduling

    DOEpatents

    Wood, Robert R.; Eckert, Philip D.; Hommes, Gregg

    2006-07-25

    A method and system for job backfill scheduling dedicated heterogeneous nodes in a multi-node computing environment. Heterogeneous nodes are grouped into homogeneous node sub-pools. For each sub-pool, a free node schedule (FNS) is created so that the number of to chart the free nodes over time. For each prioritized job, using the FNS of sub-pools having nodes useable by a particular job, to determine the earliest time range (ETR) capable of running the job. Once determined for a particular job, scheduling the job to run in that ETR. If the ETR determined for a lower priority job (LPJ) has a start time earlier than a higher priority job (HPJ), then the LPJ is scheduled in that ETR if it would not disturb the anticipated start times of any HPJ previously scheduled for a future time. Thus, efficient utilization and throughput of such computing environments may be increased by utilizing resources otherwise remaining idle.

  15. Spinning string and giant graviton in electric/magnetic field deformed AdS{sub 3}xS{sup 3}xT{sup 4}

    SciTech Connect

    Huang, W.-H.

    2006-06-15

    We apply the transformation of the mixing azimuthal and internal coordinate or the mixing time and internal coordinate to the 11D M theory with a stack of M2-branes perpendicular M2-branes, then through the mechanism of Kaluza-Klein reduction and a series of the T duality we obtain the corresponding background of a stack of D1-branes perpendicular D5-branes which, in the near-horizon limit, becomes the magnetic or electric Melvin field deformed AdS{sub 3}xS{sup 3}xT{sup 4}. We find the giant graviton solution in the deformed spacetime and see that the configuration whose angular momentum is within a finite region could have a fixed size and become more stable than the pointlike graviton, in contrast to the undeformed giant graviton which only exists when its angular momentum is a specific value and could have arbitrary size. We discuss in detail the properties of how the electric/magnetic Melvin field will affect the size of the giant gravitons. We also adopt an ansatz to find the classical string solutions which are rotating in the deformed S{sup 3} with an angular momentum in the rotation plane. The spinning string and giant graviton solutions we obtained show that the external magnetic/electric flux will increase the solution energy. Therefore, from the anti-de Sitter (AdS)/conformal field theory (CFT) point of view, the corrections of the anomalous dimensions of operators in the dual field theory will be positive. Finally, we also see that the spinning string and giant graviton in the near-horizon spacetime of Melvin field deformed D5-branes background have similar properties to those in the deformed AdS{sub 3}xS{sup 3}xT{sup 4}.

  16. Mediastinal lymph node size in lung cancer.

    PubMed

    Libshitz, H I; McKenna, R J

    1984-10-01

    Using a size criterion of 1 cm or greater as evidence for abnormality, the size of mediastinal lymph nodes identified by computed tomography (CT) was a poor predictor of mediastinal lymph node metastases in a series of 86 patients who had surgery for bronchogenic carcinoma. The surgery included full nodal sampling in all patients. Of the 86 patients, 36 had nodes greater than or equal to 1 cm identified by CT. Of the 21 patients with mediastinal metastases proven at surgery, 14 had nodes greater than or equal to 1 cm (sensitivity = 67%). Of the 65 patients without mediastinal metastases, 22 had nodes greater than or equal to 1 cm. Specificity was 66% (43/65). Obstructive pneumonia and/or pulmonary collapse distal to the cancer was present in 39 patients (45%). Of these, 21 had mediastinal nodes greater than or equal to 1 cm; 10 harbored metastases and 11 did not. Obstructive pneumonia and/or pulmonary collapse is a common occurrence in bronchogenic carcinoma, but mediastinal nodes greater than or equal to 1 cm in this circumstance cannot be presumed to represent metastatic disease. Metastatic mediastinal lymph node involvement was related to nodal size also in patients with evidence of prior granulomatous disease and in patients with no putative benign cause for nodes greater than or equal to 1 cm. In both of these groups, metastatic nodal disease was found in only 25% of nodes greater than or equal to 1 cm. PMID:6332469

  17. 3x for All: Extending the Reach of Education's Best. Building an Opportunity Culture for America's Teachers

    ERIC Educational Resources Information Center

    Hassel, Emily Ayscue; Hassel, Bryan C.

    2009-01-01

    Teacher effectiveness has the largest impact of school effects on student learning, and research indicates that top-quintile teachers produce learning gains three times (3X) that of bottom-quintile teachers. However, the supply of these "3X" teachers is limited. Meanwhile, 3X teachers affect only a small portion of children each year, no more than…

  18. A dual-modal magnetic nanoparticle probe for preoperative and intraoperative mapping of sentinel lymph nodes by magnetic resonance and near infrared fluorescence imaging

    PubMed Central

    Zhou, Zhengyang; Chen, Hongwei; Lipowska, Malgorzata; Wang, Liya; Yu, Qiqi; Yang, Xiaofeng; Tiwari, Diana; Yang, Lily; Mao, Hui

    2016-01-01

    The ability to reliably detect sentinel lymph nodes for sentinel lymph node biopsy and lymphadenectomy is important in clinical management of patients with metastatic cancers. However, the traditional sentinel lymph node mapping with visible dyes is limited by the penetration depth of light and fast clearance of the dyes. On the other hand, sentinel lymph node mapping with radionucleotide technique has intrinsically low spatial resolution and does not provide anatomic details in the sentinel lymph node mapping procedure. This work reports the development of a dual modality imaging probe with magnetic resonance and near infrared imaging capabilities for sentinel lymph node mapping using magnetic iron oxide nanoparticles (10 nm core size) conjugated with a near infrared molecule with emission at 830 nm. Accumulation of magnetic iron oxide nanoparticles in sentinel lymph nodes leads to strong T2 weighted magnetic resonance imaging contrast that can be potentially used for preoperative localization of sentinel lymph nodes, while conjugated near infrared molecules provide optical imaging tracking of lymph nodes with a high signal to background ratio. The new magnetic nanoparticle based dual imaging probe exhibits a significant longer lymph node retention time. Near infrared signals from nanoparticle conjugated near infrared dyes last up to 60 min in sentinel lymph node compared to that of 25 min for the free near infrared dyes in a mouse model. Furthermore, axillary lymph nodes, in addition to sentinel lymph nodes, can be also visualized with this probe, given its slow clearance and sufficient sensitivity. Therefore, this new dual modality imaging probe with the tissue penetration and sensitive detection of sentinel lymph nodes can be applied for preoperative survey of lymph nodes with magnetic resonance imaging and allows intraoperative sentinel lymph node mapping using near infrared optical devices. PMID:23812946

  19. Network model with structured nodes

    NASA Astrophysics Data System (ADS)

    Frisco, Pierluigi

    2011-08-01

    We present a network model in which words over a specific alphabet, called structures, are associated to each node and undirected edges are added depending on some distance measure between different structures. This model shifts the underlying principle of network generation from a purely mathematical one to an information-based one. It is shown how this model differs from the Barábasi-Albert and duplication models and how it can generate networks with topological features similar to biological networks: power law degree distribution, low average path length, clustering coefficient independent from the network size, etc. Two biological networks: S. cerevisiae gene network and E. coli protein-protein interaction network, are replicated using this model.

  20. Bodega Ocean Observing Node (BOON).

    NASA Astrophysics Data System (ADS)

    Largier, J. L.; Chow, V. I.; Williams, S. L.; Botsford, L. W.; Morgan, S. G.; Nyden, B.; Tustin, J. A.; McAfee, S.; Shideler, D.

    2004-12-01

    The Bodega Ocean Observing Node (BOON) is comprised of radar mapping of surface currents, a moored current profiler, and shoreline oceanographic and meteorological observations. Ongoing shoreline data on temperature and salinity date back to 1955, with continuous records of sealevel, wind, meteorology, and chlorophyll fluorescence starting more recently. Radar observations started in 2001 with deployment of two CODAR antennae. Together with a third CODAR unit deployed in 2002, these provide coverage from Pt Reyes north to the CODE line. Real-time ADCP data from the mooring started in late 2004. Plans include nearshore wave data, CTD/fluorescence data from the mooring, and deployment of a nutrient sensor at the shoreline. This coastal ocean observing node is part of the state-funded COCMP-NC program and the CeNCOOS regional association for central and northern California. Ancillary regional data are available on offshore winds (NDBC buoys), offshore waves (CDIP buoy), river flow, and satellite observations. The value of this suite of measurements is built on (1) detailed understanding of circulation, derived from WEST, CODE, and other prior studies of this region, including mesoscale atmosphere and ocean modeling, (2) active integration of circulation patterns in ongoing studies of planktonic and benthic ecology, and (3) direct interaction with local, state and federal agencies with interest in this region. To-date, the ongoing data series have shown potential for improved understanding and monitoring of fishery populations such as salmon and crab, as well as water quality concerns including oil spills and toxic pollutants. Through an active involvement in local studies and environmental management issues, BOON seeks to develop alternatives to supply-side thinking in the design of coastal ocean observing systems. BOON is based at the Bodega Marine Laboratory and thus provides invaluable support for academic study of more fundamental questions, such as carbon budgets

  1. Nodes packaging option for Space Station application

    NASA Technical Reports Server (NTRS)

    So, Kenneth T.; Hall, John B., Jr.

    1988-01-01

    Space Station nodes packaging analyses are presented relative to moving environmental control and life support system (ECLSS) equipment from the habitability (HAB) module to node 4, in order to provide more living space and privacy for the crew, remove inherently noisy equipment from the crew quarter, retain crew waste collection and processing equipment in one location, and keep objectionable odor away from the living quarters. In addition, options for moving external electronic equipment from the Space Station truss to pressurized node 3 were evaluated in order to reduce the crew extravehicular-activity time required to install and maintain the equipment. Node size considered in this analysis is 3.66 m in diameter and 5.38 m long. The analysis shows that significant external electronic equipment could be relocated from the Space Station truss structure to node 3, and nonlife critical ECLSS HAB module equipment could be moved to node 4.

  2. Large magneto-optical Kerr effect in noncollinear antiferromagnets Mn3X (X =Rh ,Ir ,Pt )

    NASA Astrophysics Data System (ADS)

    Feng, Wanxiang; Guo, Guang-Yu; Zhou, Jian; Yao, Yugui; Niu, Qian

    2015-10-01

    Magneto-optical Kerr effect, normally found in magnetic materials with nonzero magnetization such as ferromagnets and ferrimagnets, has been known for more than a century. Here, using first-principles density functional theory, we demonstrate large magneto-optical Kerr effect in high-temperature noncollinear antiferromagnets Mn3X (X =Rh ,Ir ,Pt ), in contrast to usual wisdom. The calculated Kerr rotation angles are large, being comparable to that of transition-metal magnets such as bcc Fe. The large Kerr rotation angles and ellipticities are found to originate from the lifting of band double degeneracy due to the absence of spatial symmetry in the Mn3X noncollinear antiferromagnets which together with the time-reversal symmetry would preserve the Kramers theorem. Our results indicate that Mn3X would provide a rare material platform for exploration of subtle magneto-optical phenomena in noncollinear magnetic materials without net magnetization.

  3. A Noise and Emissions Assessment of the N3-X Transport

    NASA Technical Reports Server (NTRS)

    Berton, Jeffrey J.; Haller, William J.

    2014-01-01

    Analytical predictions of certification noise and exhaust emissions for NASA's N3-X - a notional, hybrid wingbody airplane - are presented in this paper. The N3-X is a 300-passenger concept transport propelled by an array of fans distributed spanwise near the trailing edge of the wingbody. These fans are driven by electric motors deriving power from twin generators driven by turboshaft engines. Turboelectric distributed hybrid propulsion has the potential to dramatically increase the propulsive efficiency of aircraft. The noise and exhaust emission estimates presented here are generated using NASA's conceptual design systems analysis tools with several key modifications to accommodate this unconventional architecture. These tools predict certification noise and the emissions of oxides of nitrogen by leveraging data generated from a recent analysis of the N3-X propulsion system.

  4. Resource-Efficient High-Yield Ionothermal Synthesis of Microcrystalline Cu3-xP.

    PubMed

    Wolff, Alexander; Pallmann, Julia; Boucher, Richard; Weiz, Alexander; Brunner, Eike; Doert, Thomas; Ruck, Michael

    2016-09-01

    Polycrystalline Cu3-xP was successfully synthesized in different ionic liquids comprising imidazolium and phosphonium cations. The reaction of elemental copper and red phosphorus in trihexyltetradecylphosphonium chloride at 200 °C led to single-phase Cu3-xP (x = 0.05) within 24 h with a quantitative yield (99%). Liquid-state nuclear magnetic resonance spectroscopy of the ionic liquids revealed degeneration of the imidazolium cations under the synthesis conditions, while phosphonium cations remain stable. The solid products were characterized with X-ray powder diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, solid-state nuclear magnetic resonance spectroscopy, and elemental analysis. A reinvestigation of the electronic transport properties of Cu2.95(4)P showed metallic behavior for the bulk material. The formation of CuP2 during the synthesis of phosphorus-rich Cu3-xP (x ≥ 0.1) was observed. PMID:27559933

  5. Flow Simulation of N3-X Hybrid Wing-Body Configuration

    NASA Technical Reports Server (NTRS)

    Kim, Hyoungjin; Liou, Meng-Sing

    2013-01-01

    System studies show that a N3-X hybrid wing-body aircraft with a turboelectric distributed propulsion system using a mail-slot inlet/nozzle nacelle can meet the environmental and performance goals for N+3 generation transports (three generations beyond the current air transport technology level) set by NASA s Subsonic Fixed Wing Project. In this study, a Navier-Stokes flow simulation of N3-X on hybrid unstructured meshes was conducted, including the mail-slot propulsor. The geometry of the mail-slot propulsor was generated by a CAD (Computer-Aided Design)-free shape parameterization. A body force approach was used for a more realistic and efficient simulation of the turning and loss effects of the fan blades and the inlet-fan interactions. Flow simulation results of the N3-X demonstrates the validity of the present approach.

  6. Bit Distribution and Reliability of High Density 1.5 V Ferroelectric Random Access Memory Embedded with 130 nm, 5 lm Copper Complementary Metal Oxide Semiconductor Logic

    NASA Astrophysics Data System (ADS)

    Udayakumar, K. R.; Boku, K.; Remack, K. A.; Rodriguez, J.; Summerfelt, S. R.; Celii, F. G.; Aggarwal, S.; Martin, J. S.; Hall, L.; Matz, L.; Rathsack, B.; McAdams, H.; Moise, T. S.

    2006-04-01

    High density embedded ferroelectric random access memory (FRAM), operable at 1.5 V, has been fabricated within a 130 nm, 5 lm Cu/fluorosilicate glass (FSG) logic process. To evaluate FRAM extendability to future process nodes, we have measured the bit distribution and reliability properties of arrays with varying individual capacitor areas ranging from 0.40 μm2 (130 nm node) to 0.15 μm2 (˜65 nm node). Wide signal margins, stable retention (≫10 years at 85 °C), and high endurance read/write cycling (≫1012 cycles) have been demonstrated, suggesting that reliable, high density FRAM can be realized.

  7. Drainage of cells and soluble antigen from the CNS to regional lymph nodes.

    PubMed

    Laman, Jon D; Weller, Roy O

    2013-09-01

    Despite the absence of conventional lymphatics, there is efficient drainage of both cerebrospinal fluid (CSF) and interstitial fluid (ISF) from the CNS to regional lymph nodes. CSF drains from the subarachnoid space by channels that pass through the cribriform plate of the ethmoid bone to the nasal mucosa and cervical lymph nodes in animals and in humans; antigen presenting cells (APC) migrate along this pathway to lymph nodes. ISF and solutes drain from the brain parenchyma to cervical lymph nodes by a separate route along 100-150 nm wide basement membranes in the walls of cerebral capillaries and arteries. This pathway is too narrow for the migration of APC so it is unlikely that APC traffic directly from brain parenchyma to lymph nodes by this route. We present a model for the pivotal involvement of regional lymph nodes in immunological reactions of the CNS. The role of regional lymph nodes in immune reactions of the CNS in virus infections, the remote influence of the gut microbiota, multiple sclerosis and stroke are discussed. Evidence is presented for the role of cervical lymph nodes in the induction of tolerance and its influence on neuroimmunological reactions. We look to the future by examining how nanoparticle technology will enhance our understanding of CNS-lymph node connections and by reviewing the implications of lymphatic drainage of the brain for diagnosis and therapy of diseases of the CNS ranging from neuroimmunological disorders to dementias. Finally, we review the challenges and opportunities for progress in CNS-lymph node interactions and their involvement in disease processes. PMID:23695293

  8. UWB-WBAN sensor node design.

    PubMed

    Keong, Ho Chee; Yuce, M R

    2011-01-01

    In this paper, we discuss the hardware development of a UWB sensor node for wireless body area networks. A few unique UWB pulse generation techniques have been discussed. The sensor node transmits multiple pulses per bit to increase the average power of the transmitted signal in order to improve the bit-error rate (BER) performance. The multiple-pulse per bit technique is also used as the coding scheme to identify the individual sensor nodes when more than one sensor forms a network. The sensors nodes are able to transmit body signals up to 2 m with a BER lower than 10(-5). PMID:22254770

  9. What's the Best Node for Your Cluster?

    NASA Astrophysics Data System (ADS)

    Stevens, Rick

    2000-03-01

    A well designed cluster requires a node containing the most appropriate balance of resources for the problems it will be solving. For many scientific problems, memory bandwidth or peripheral bandwidth can be a severe bottleneck, and spending extra money on a faster processor will not increase performance significantly. This talk will cover the options available for cluster nodes including processors, memory speeds and standards, and peripheral busses. There will also be a discussion of when SMP nodes should be used, and how many processors can be accomodated per node.

  10. Seismogenic nodes in the Mediterranean orogenic belt

    NASA Astrophysics Data System (ADS)

    Gorshkov, A.; Panza, G.; Soloviev, A.; Aoudia, A.

    2003-04-01

    The central segment of the Mediterranean orogenic belt (the Apennines, Alps, Carpathians, Balkanides, and Dinarides) has been studied to identify seismogenic nodes, specific structures formed at the intersections of fault zones. The nodes have been delineated with the morphostructural zoning (MSZ) based on the concept that the lithosphere is built-up by different-scale blocks, separated by mobile boundaries. With MSZ we compiled the morphostructural map (scale 1:1,000,000) for the study region using the GIS technology. The map shows the hierarchical block-structure of the region, the boundary zones bounding blocks, and the loci of the nodes. Three-level hierarchy has been established for the blocks and their boundaries. All the recorded M >= 6.0 earthquakes nucleate at the nodes delineated by MSZ, i.e. ignoring the seismic record. The nodes capable of M >= 6.5 earthquakes are identified with the criteria of high seismicity nodes, previously derived from pattern recognition in the Pamirs -Tien Shan region. In the study region, with the employed criteria 29 out of the 33 nodes, hosting the observed M >= 6.5 events, have been classified as prone to M >= 6.5 earthquakes. With the exception of the Carpatho-Balkanides system, where the recognition procedure is inapplicable due to the insufficient number of sample nodes for the learning stage, we recognized the seismogenic nodes (D), prone to M >= 6.0 earthquakes, with the pattern recognition algorithm CORA-3. The recognition is performed using geomorphic, morphostructural, and gravity parameters relevant to seismicity. The majority of D nodes is associated with the first and second rank boundaries, i.e. larger earthquakes originate at the boundaries of larger blocks. Characteristic traits of D nodes selected by CORA-3 suggest an increased fragmentation of the crust and high intensity of tectonic movements in the D nodes vicinities. We identify a number of D nodes, where strong earthquakes are not recorded till present

  11. A four-interleaving HBD SRAM cell based on dual DICE for multiple node collection mitigation

    NASA Astrophysics Data System (ADS)

    Lin, Liu; Suge, Yue; Shijin, Lu

    2015-11-01

    A 4-interleaving cell of 2-dual interlocked cells (DICE) is proposed, which reduces single event induced multiple node collection between the sensitive nodes of sensitive pairs in a DICE storage cell in 65 nm technology. The technique involves the 4-interleaving of dual DICE cells at a layout level to meet the required spacing between sensitive nodes in an area-efficient manner. Radiation experiments using a 65 nm CMOS test chip demonstrate that the LETth of our 4-interleaving cell of dual DICE encounters are almost 4× larger and the SEU cross section per bit for our proposed dual DICE design is almost two orders of magnitude less compared to the reference traditional DICE cell.

  12. Implementation of reflected light die-to-die inspection and ReviewSmart to improve 65nm DRAM mask fabrication

    NASA Astrophysics Data System (ADS)

    Kim, Do Young; Cho, Won Il; Park, Jin Hyung; Chung, Dong Hoon; Cha, Byung Chul; Choi, Seong Woon; Han, Woo Sung; Park, Ki Hun; Kim, Nam Wook; Hess, Carl; Ma, Weimin; Kim, David

    2005-11-01

    As the design rule continues to shrink towards 65nm size and beyond the defect criteria are becoming ever more challenging. Pattern fidelity and reticle defects that were once considered as insignificant or nuisance are now becoming significant yield impacting defects. The intent of this study is to utilize the new generation DUV system to compare Die-to-Die Reflected Light inspection and Die-to-Die Transmitted Light Inspection to increase defect detection for optimization of the 65nm node process. In addition, the ReviewSmart will be implemented to help categorically identify systematic tool and process variations and thus allowing user to expedite the learning process to develop a production worthy 65nm node mask process. The learning will be applied to Samsung's pattern inspection strategy, complementing Transmitted Light Inspection, on critical layers of 65 nm node to gain ability to find defects that adversely affect process window.

  13. Photoionization of Nitromethane at 355nm and 266nm

    NASA Astrophysics Data System (ADS)

    Martínez, Denhi; Betancourt, Francisco; Poveda, Juan Carlos; Guerrero, Alfonso; Cisneros, Carmen; Álvarez, Ignacio

    2014-05-01

    Nitromethane is one of the high-yield clean liquid fuels, i.e., thanks to the oxygen contained in nitromethane, much less atmospheric oxygen is burned compared to hydrocarbons such as gasoline, making the nitromethane an important prototypical energetic material, the understanding of its chemistry is relevant in other fields such as atmospheric chemistry or biochemistry. In this work we present the study of photoionization dynamics by multiphoton absorption with 355 nm and 266 nm wavelength photons, using time of flight spectrometry in reflectron mode (R-TOF). Some of the observed ion products appear for both wavelength and other only in one of them; both results were compared with preview observations and new ions were detected. This work is supported by CONACYT grant 165410 and DGAPA-UNAM grants IN-107-912 and IN-102-613.

  14. The Planetary Data System Geosciences Node

    NASA Astrophysics Data System (ADS)

    Guinness, Edward A.; Arvidson, Raymond E.; Slavney, Susan

    1996-01-01

    The purpose of the Planetary Data System Geosciences Node is to archive and distribute planetary geosciences datasets relevant to the surfaces and interiors of the terrestrial planets and moons. This objective is accomplished through the following efforts. The Node works with planetary missions to help ensure that data of relevance to the geosciences discipline are properly documented and archived. The Node restores and publishes selected geoscience datasets from past missions on CD-ROM for distribution to the planetary science community. Data archived at the Node are distributed on CD-ROM, magnetic tape, CD-WO, or by electronic transfer over the Internet. The Geo-sciences Node provides information and expert assistance on its data holdings. Derived image, geophysics, microwave, spaceborne thermal, and radio science data are archived at the lead node or at one of the subnodes. Currently, the amount of data archived at the Node is on the order of 500 Gbytes stored on a combination of nearly 800 CD-ROMs and CD-WOs. Current archives within the Node include data from the Magellan and Viking missions, the Geological Remote Sensing Field Experiment, and a collection of radar, altimetry, and gravity datasets for Venus, Mercury, Mars, Earth, and the Moon, together with software to analyze the data. The Node maintains on-line catalogs that enable the science community to search through the Geosciences Node archives and to order selected datasets. Access to the Node's catalogs and on-line datasets is available via the Internet using a remote login or via the World Wide Web (WWW).

  15. Reddish-orange Ca3-xAl2O6:xEu3+ nanophosphors: Fast synthesis and photophysical properties

    NASA Astrophysics Data System (ADS)

    Barros, B. S.; de Oliveira, R. S.; Kulesza, J.; Melo, V. R. M.; Melo, D. M. A.; Alves, S.

    2015-03-01

    This paper focuses on the synthesis and the photoluminescent properties of Ca3-xAl2O6:xEu3+ (0≤x≤0.1) nanophosphors prepared by microwave-assisted combustion method without any further heat treatment. X-ray diffraction, scanning electron microscopy and photoluminescence spectroscopy were used to characterize the produced samples. Nanosized particles smaller than 120 nm were obtained as confirmed by SEM. When exposed to UV light radiation at 254 nm, the europium-doped nanoparticles showed strong reddish-orange luminescence due to the characteristic transitions 5D0→7F1 (orange) and 5D0→7F2, (red). The maximum emission intensity of the visible emission was obtained for x=0.05. It was also found that higher doping concentrations led to the luminescence quenching by a cross-relaxation mechanism between Eu3+ ions in the lattice.

  16. Design strategy for integrating DSA via patterning in sub-7 nm interconnects

    NASA Astrophysics Data System (ADS)

    Karageorgos, Ioannis; Ryckaert, Julien; Tung, Maryann C.; Wong, H.-S. P.; Gronheid, Roel; Bekaert, Joost; Karageorgos, Evangelos; Croes, Kris; Vandenberghe, Geert; Stucchi, Michele; Dehaene, Wim

    2016-03-01

    In recent years, major advancements have been made in the directed self-assembly (DSA) of block copolymers (BCPs). As a result, the insertion of DSA for IC fabrication is being actively considered for the sub-7nm nodes. At these nodes the DSA technology could alleviate costs for multiple patterning and limit the number of litho masks that would be required per metal layer. One of the most straightforward approaches for DSA implementation would be for via patterning through templated DSA, where hole patterns are readily accessible through templated confinement of cylindrical phase BCP materials. Our in-house studies show that decomposition of via layers in realistic circuits below the 7nm node would require at least many multi-patterning steps (or colors), using 193nm immersion lithography. Even the use of EUV might require double patterning in these dimensions, since the minimum via distance would be smaller than EUV resolution. The grouping of vias through templated DSA can resolve local conflicts in high density areas. This way, the number of required colors can be significantly reduced. For the implementation of this approach, a DSA-aware mask decomposition is required. In this paper, our design approach for DSA via patterning in sub-7nm nodes is discussed. We propose options to expand the list of DSA-compatible via patterns (DSA letters) and we define matching cost formulas for the optimal DSA-aware layout decomposition. The flowchart of our proposed approach tool is presented.

  17. OISL transmitter at 985 nm

    NASA Astrophysics Data System (ADS)

    Larose, Robert; Lauzon, Jocelyn; Mohrdiek, Stefan; Harder, Christoph S.; Changkakoti, Rupak; Park, Peter

    1999-04-01

    For high data rate (greater than 1 Gbps) Optical Inter- Satellite Link (OISL), a compact laser transmitter with high power and good efficiency is required. A trade-off analysis between the technologies such as the mature 840 nm laser diodes, 1064 nm diode-pumped solid state laser and the more recent 1550 nm Erbium Doped Fiber Amplifier (EDFA) is used to find the optical solution. The Si-APDs are preferred for their large detector areas and good noise figures which reduce the tracking requirements and simplify optical design of the receiver. Because of significant amount of power needed to close the link distance up to 7000 km (LEO-LEO), use of 840 nm diodes is limited. In this paper, we present an alternative system based on a system concept denoted as the SLYB (Semiconductor Laser Ytterbium Booster). The SLYB uses a polarization maintaining double-clad ytterbium fiber as a power amplifier. The device houses two semiconductor diodes that are designed to meet telecom reliability: a broad-area 917 nm pump diode and a directly modulated FP laser for signal generation. The output signal is in a linearly polarized state with an extinction ratio of 20 dB. The complete module (15 X 12 X 4.3 cm3) weighs less than 0.9 kg and delivers up to 27 dBm average output power at 985 nm. Designed primarily for direct detection using Si APDs, the transmitter offers a modulation data rate of at least 1.5 Gb/s with a modulation extinction ratio better than 13 dB. Total power consumption is expected to be lower than 8 W by using an uncooled pump laser. Preliminary radiation testing of the fiber indicates output power penalty of 1.5 dB at the end of 10 years in operation. We are presently investigating the fabrication of an improved radiation-hardened Yb-fiber for the final prototype to reduce this penalty. For higher data rate the design can be extended to a Wavelength Division Multiplexing (WDM) scheme adding multiple channels.

  18. Window type: paired 3x2 multipaned steel window flanked by 1x3 ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Window type: paired 3x2 multipaned steel window flanked by 1x3 multipaned steel casements, breaking building corner. Broad overhanging eave also illustrated. Second story detail. Building 13, facing east - Harbor Hills Housing Project, 26607 Western Avenue, Lomita, Los Angeles County, CA

  19. Comparison of Yamax pedometer and GT3X accelerometer steps in a free-living sample

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Our objective was to compare steps detected by the Yamax pedometer (PEDO) versus the GT3X accelerometer (ACCEL) in free-living adults. Daily PEDO and ACCEL steps were collected from a sample of 23 overweight and obese participants (18 females; mean +/- sd: age = 52.6 +/- 8.4 yr.; body mass index = 3...

  20. Ultrasmall Biocompatible WO3- x Nanodots for Multi-Modality Imaging and Combined Therapy of Cancers.

    PubMed

    Wen, Ling; Chen, Ling; Zheng, Shimin; Zeng, Jianfeng; Duan, Guangxin; Wang, Yong; Wang, Guanglin; Chai, Zhifang; Li, Zhen; Gao, Mingyuan

    2016-07-01

    Ultrasmall biocompatible WO3 - x nanodots with an outstanding X-ray radiation sensitization effect are prepared, and demonstrated to be applicable for multi-modality tumor imaging through computed tomography and photoacoustic imaging (PAI), and effective cancer treatment combining both photothermal therapy and radiation therapy. PMID:27136070

  1. Structure and magnetic transport properties of GdIn3-xMnx intermetallics

    NASA Astrophysics Data System (ADS)

    He, Qiang; Guo, Yongquan; Liu, Hanyuan

    2016-03-01

    The crystal structures and magneto-transport properties of GdIn3-xMnx have been investigated using X-ray diffraction and magnetic and electric measurements. GdIn3-xMnx crystallize in cubic structure, and their lattice parameters tend to decrease with increasing Mn content due to the size effect at In site by Mn substitution for In. Mn doped GdIn3-xMnx order antiferromagnetically at low temperature. However, Mn doping into GdIn3 causes the decrease of Néel temperature due to the distortion of Gd(In,Mn)3 tetrahedron formed by Gd at corners and (In,Mn) at face centers in unit cell. The resistivities of GdIn3-xMnx are going up with increasing Mn content. The electric phase transition is associated with the magnetic transition, and the magneto-transport follows electron-magnon scattering model in low temperature region and the Stoner spin fluctuation model in high temperature region, respectively.

  2. Master formula approach to broken chiral U(3)xU(3) symmetry

    SciTech Connect

    Hiroyuki Kamano

    2010-04-01

    The master formula approach to chiral symmetry breaking proposed by Yamagishi and Zahed is extended to the U_R(3)xU_L(3) group, in which effects of the U_A(1) anomaly and the flavor symmetry breaking m_u \

  3. Impairment of nesting behaviour in 3xTg-AD mice.

    PubMed

    Torres-Lista, Virginia; Giménez-Llort, Lydia

    2013-06-15

    Deterioration in executive functions and daily life activities (DLA) are early signs of Alzheimer's disease (AD) that signal the need for caregiver attention. We have addressed this issue in the 3xTg-AD mice model for AD and studied nesting behaviour as a natural DLA of parental structures as well as at early- (6 month-old) and advanced-stages (12 month-old) of the disease in isolated animals. The results show genetic, gender and age-dependent impairment of nesting behaviour but also aware about the relevance of factors such as the temporal course of nest construction and the nesting material. Paper towel consistently showed the impairment of nesting behavior in 3xTg-AD mice since early stages of the disease and in both social conditions. Their nest construction was slow temporal pattern and of poor quality, especially in females and advanced stages of the disease where the deficits were shown from the first day. In all cases, cotton elicited an intense behaviour that lead to perfect nesting during the first 48 h. Genotype, gender and age differences were found in the onset of nesting behaviour, with a time delay in the 3xTg-AD mice, particularly in females. The reported impairment of nesting behaviour in 3xTg-AD provides another behavioral tool to assess the benefits of preventive and/or therapeutic strategies, as well as the potential action of risk factors of AD, in this animal model. PMID:23523959

  4. Reexamining D-branes in AdS{sub 3}xS{sub 3} space

    SciTech Connect

    Kumar, Jason; Rajaraman, Arvind

    2004-11-15

    We find the most general supergravity solution in an AdS{sup 3}xS{sup 3} background preserving an AdS{sub 2}xS{sup 2} symmetry and half the supersymmetries. Contrary to previous expectations from boundary state arguments, it is shown that no solutions exist containing localized brane sources.

  5. Classification between Failed Nodes and Left Nodes in Mobile Asset Tracking Systems.

    PubMed

    Kim, Kwangsoo; Jin, Jae-Yeon; Jin, Seong-Il

    2016-01-01

    Medical asset tracking systems track a medical device with a mobile node and determine its status as either in or out, because it can leave a monitoring area. Due to a failed node, this system may decide that a mobile asset is outside the area, even though it is within the area. In this paper, an efficient classification method is proposed to separate mobile nodes disconnected from a wireless sensor network between nodes with faults and a node that actually has left the monitoring region. The proposed scheme uses two trends extracted from the neighboring nodes of a disconnected mobile node. First is the trend in a series of the neighbor counts; the second is that of the ratios of the boundary nodes included in the neighbors. Based on such trends, the proposed method separates failed nodes from mobile nodes that are disconnected from a wireless sensor network without failures. The proposed method is evaluated using both real data generated from a medical asset tracking system and also using simulations with the network simulator (ns-2). The experimental results show that the proposed method correctly differentiates between failed nodes and nodes that are no longer in the monitoring region, including the cases that the conventional methods fail to detect. PMID:26901200

  6. Classification between Failed Nodes and Left Nodes in Mobile Asset Tracking Systems †

    PubMed Central

    Kim, Kwangsoo; Jin, Jae-Yeon; Jin, Seong-il

    2016-01-01

    Medical asset tracking systems track a medical device with a mobile node and determine its status as either in or out, because it can leave a monitoring area. Due to a failed node, this system may decide that a mobile asset is outside the area, even though it is within the area. In this paper, an efficient classification method is proposed to separate mobile nodes disconnected from a wireless sensor network between nodes with faults and a node that actually has left the monitoring region. The proposed scheme uses two trends extracted from the neighboring nodes of a disconnected mobile node. First is the trend in a series of the neighbor counts; the second is that of the ratios of the boundary nodes included in the neighbors. Based on such trends, the proposed method separates failed nodes from mobile nodes that are disconnected from a wireless sensor network without failures. The proposed method is evaluated using both real data generated from a medical asset tracking system and also using simulations with the network simulator (ns-2). The experimental results show that the proposed method correctly differentiates between failed nodes and nodes that are no longer in the monitoring region, including the cases that the conventional methods fail to detect. PMID:26901200

  7. Contrast enhanced ultrasound of sentinel lymph nodes

    PubMed Central

    Cui, XinWu; Ignee, Andre; Nielsen, Michael Bachmann; Schreiber-Dietrich, Dagmar; De Molo, Chiara; Pirri, Clara; Jedrzejczyk, Maciej

    2013-01-01

    Sentinel lymph nodes are the first lymph nodes in the region that receive lymphatic drainage from a primary tumor. The detection or exclusion of sentinel lymph node micrometastases is critical in the staging of cancer, especially breast cancer and melanoma because it directly affects patient's prognosis and surgical management. Currently, intraoperative sentinel lymph node biopsies using blue dye and radioisotopes are the method of choice for the detection of sentinel lymph node with high identification rate. In contrast, conventional ultrasound is not capable of detecting sentinel lymph nodes in most cases. Contrast enhanced ultrasound with contrast specific imaging modes has been used for the evaluation and diagnostic work-up of peripherally located suspected lymphadenopathy. The method allows for real-time analysis of all vascular phases and the visualization of intranodal focal “avascular” areas that represent necrosis or deposits of neoplastic cells. In recent years, a number of animal and human studies showed that contrast enhanced ultrasound can be also used for the detection of sentinel lymph node, and may become a potential application in clinical routine. Several contrast agents have been used in those studies, including albumin solution, hydroxyethylated starch, SonoVue®, Sonazoid® and Definity®. This review summarizes the current knowledge about the use of ultrasound techniques in detection and evaluation of sentinel lymph node. PMID:26675994

  8. Mediastinal lymph node size in lung cancer

    SciTech Connect

    Libshitz, H.I.; McKenna, R.J. Jr.

    1984-10-01

    Using a size criterion of 1 cm or greater as evidence for abnormality, the size of mediastinal lymph nodes identified by computed tomography (CT) was a poor predictor of mediastinal lymph node metastases in a series of 86 patients who had surgery for bronchogenic carcinoma. The surgery included full nodal sampling in all patients. Of the 86 patients, 36 had nodes greater than or equal to 1 cm identified by CT. Of the 21 patients with mediastinal metastases proven at surgery, 14 had nodes greater than or equal to 1 cm (sensitivity = 67%). Of the 65 patients without mediastinal metastases, 22 had nodes greater than or equal to 1 cm. Obstructive pneumonia and/or pulmonary collapse distal to the cancer was present in 39 patients (45%). Obstructive pneumonia and/or pulmonary collapse is a common occurrence in bronchogenic carcinoma, but mediastinal nodes greater than or equal to 1 cm in this circumstance cannot be presumed to represent metastatic disease. Metastatic mediastinal lymph node involvement was related to nodal size also in patients with evidence of prior granulomatous disease and in patients with no putative benign cause for nodes greater than or equal to 1 cm.

  9. Testnodes: a Lightweight Node-Testing Infrastructure

    NASA Astrophysics Data System (ADS)

    Fay, R.; Bland, J.

    2014-06-01

    A key aspect of ensuring optimum cluster reliability and productivity lies in keeping worker nodes in a healthy state. Testnodes is a lightweight node testing solution developed at Liverpool. While Nagios has been used locally for general monitoring of hosts and services, Testnodes is optimised to answer one question: is there any reason this node should not be accepting jobs? This tight focus enables Testnodes to inspect nodes frequently with minimal impact and provide a comprehensive and easily extended check with each inspection. On the server side, Testnodes, implemented in python, interoperates with the Torque batch server to control the nodes production status. Testnodes remotely and in parallel executes client-side test scripts and processes the return codes and output, adjusting the node's online/offline status accordingly to preserve the integrity of the overall batch system. Testnodes reports via log, email and Nagios, allowing a quick overview of node status to be reviewed and specific node issues to be identified and resolved quickly. This presentation will cover testnodes design and implementation, together with the results of its use in production at Liverpool, and future development plans.

  10. Transformation of Sintered CsPbBr3 Nanocrystals to Cubic CsPbI3 and Gradient CsPbBrxI3-x through Halide Exchange.

    PubMed

    Hoffman, Jacob B; Schleper, A Lennart; Kamat, Prashant V

    2016-07-13

    All-inorganic cesium lead halide (CsPbX3, X = Br(-), I(-)) perovskites could potentially provide comparable photovoltaic performance with enhanced stability compared to organic-inorganic lead halide species. However, small-bandgap cubic CsPbI3 has been difficult to study due to challenges forming CsPbI3 in the cubic phase. Here, a low-temperature procedure to form cubic CsPbI3 has been developed through a halide exchange reaction using films of sintered CsPbBr3 nanocrystals. The reaction was found to be strongly dependent upon temperature, featuring an Arrhenius relationship. Additionally, film thickness played a significant role in determining internal film structure at intermediate reaction times. Thin films (50 nm) showed only a small distribution of CsPbBrxI3-x species, while thicker films (350 nm) exhibited much broader distributions. Furthermore, internal film structure was ordered, featuring a compositional gradient within film. Transient absorption spectroscopy showed the influence of halide exchange on the excited state of the material. In thicker films, charge carriers were rapidly transferred to iodide-rich regions near the film surface within the first several picoseconds after excitation. This ultrafast vectorial charge-transfer process illustrates the potential of utilizing compositional gradients to direct charge flow in perovskite-based photovoltaics. PMID:27322132

  11. Locating influential nodes in complex networks

    PubMed Central

    Malliaros, Fragkiskos D.; Rossi, Maria-Evgenia G.; Vazirgiannis, Michalis

    2016-01-01

    Understanding and controlling spreading processes in networks is an important topic with many diverse applications, including information dissemination, disease propagation and viral marketing. It is of crucial importance to identify which entities act as influential spreaders that can propagate information to a large portion of the network, in order to ensure efficient information diffusion, optimize available resources or even control the spreading. In this work, we capitalize on the properties of the K-truss decomposition, a triangle-based extension of the core decomposition of graphs, to locate individual influential nodes. Our analysis on real networks indicates that the nodes belonging to the maximal K-truss subgraph show better spreading behavior compared to previously used importance criteria, including node degree and k-core index, leading to faster and wider epidemic spreading. We further show that nodes belonging to such dense subgraphs, dominate the small set of nodes that achieve the optimal spreading in the network. PMID:26776455

  12. Expandable and reconfigurable instrument node arrays

    NASA Technical Reports Server (NTRS)

    Hilliard, Lawrence M. (Inventor); Deshpande, Manohar (Inventor)

    2012-01-01

    An expandable and reconfigurable instrument node includes a feature detection means and a data processing portion in communication with the feature detection means, the data processing portion configured and disposed to process feature information. The instrument node further includes a phase locked loop (PLL) oscillator in communication with the data processing portion, the PLL oscillator configured and disposed to provide PLL information to the processing portion. The instrument node further includes a single tone transceiver and a pulse transceiver in communication with the PLL oscillator, the single tone transceiver configured and disposed to transmit or receive a single tone for phase correction of the PLL oscillator and the pulse transceiver configured and disposed to transmit and receive signals for phase correction of the PLL oscillator. The instrument node further includes a global positioning (GPA) receiver in communication with the processing portion, the GPS receiver configured and disposed to establish a global position of the instrument node.

  13. Node 2 In Space Station Processing Facility

    NASA Technical Reports Server (NTRS)

    2003-01-01

    The U.S. Node 2 awaits launch in the Space Station Processing Facility at the Kennedy Space Center (KSC) since its arrival on June 1, 2003. Node 2, the 'utility hub' and second of three connectors between International Space Station (ISS) modules, was built in the Torino, Italy facility of Alenia Spazio, an International contractor based in Rome. Alenia built Node 2 as part of an agreement between NASA and the European Space Agency (ESA). Weighing in at approximately 30,000 pounds, the Node is more than 20-feet long and 14.5-feet wide. This centerpiece of the ISS will be the next pressurized module installed on the Station and will result in a roomier Station, allowing it to expand from the equivalent space of a 3-bedroom house to a 5-bedroom house once the Japanese and European laboratories are attached to it. The Marshall Space Center in Huntsville, Alabama manages the Node program for NASA.

  14. Locating influential nodes in complex networks

    NASA Astrophysics Data System (ADS)

    Malliaros, Fragkiskos D.; Rossi, Maria-Evgenia G.; Vazirgiannis, Michalis

    2016-01-01

    Understanding and controlling spreading processes in networks is an important topic with many diverse applications, including information dissemination, disease propagation and viral marketing. It is of crucial importance to identify which entities act as influential spreaders that can propagate information to a large portion of the network, in order to ensure efficient information diffusion, optimize available resources or even control the spreading. In this work, we capitalize on the properties of the K-truss decomposition, a triangle-based extension of the core decomposition of graphs, to locate individual influential nodes. Our analysis on real networks indicates that the nodes belonging to the maximal K-truss subgraph show better spreading behavior compared to previously used importance criteria, including node degree and k-core index, leading to faster and wider epidemic spreading. We further show that nodes belonging to such dense subgraphs, dominate the small set of nodes that achieve the optimal spreading in the network.

  15. High speed polling protocol for multiple node network

    NASA Technical Reports Server (NTRS)

    Kirkham, Harold (Inventor)

    1995-01-01

    The invention is a multiple interconnected network of intelligent message-repeating remote nodes which employs a remote node polling process performed by a master node by transmitting a polling message generically addressed to all remote nodes associated with the master node. Each remote node responds upon receipt of the generically addressed polling message by transmitting a poll-answering informational message and by relaying the polling message to other adjacent remote nodes.

  16. Multiwavelength lidar node development and simulation for a regional tropospheric aerosol monitoring network

    NASA Astrophysics Data System (ADS)

    Pawelko, E. E.; Ristori, P. R.; Otero, L. A.; Pallotta, J. V.; Quel, E. J.

    2011-01-01

    This work studies multiwavelength lidar node operation requirements to operate in a regional aerosol monitoring network. Some of the parameters taken into account are simplicity and robustness of the system in continuous and remote operation conditions. Sub-system modularity and accessibility is also contemplated. A numerical simulation is performed on a synthetic atmospheric signal to analyze the behaviour of this system in a) the visible (532 nm) and infrared (1064 nm) spectral regions; b) the main atmospheric compound Raman spectral region (nitrogen, oxygen water vapor). Adding depolarization channels in the 532 nm spectral region is also contemplated.

  17. Synthesis of nanoparticles of Co xFe (3-x)O 4 by combustion reaction method

    NASA Astrophysics Data System (ADS)

    Franco, Adolfo; Celma de Oliveira Lima, Emília; Novak, Miguel A.; Wells, Paulo R.

    2007-01-01

    Nanocrystalline magnetic particles of Co xFe (3-x)O 4, with x ranging from 0.79 to 1.15, has been synthesised by combustion reaction method using iron nitrate Fe(NO 3) 3.9H 2O, cobalt nitrate Co(NO 3) 2·6H 2O, and urea CO(NH 2) 2 as fuel without template and subsequent heat treatment. The process is quite simple and inexpensive since it does not involve intermediate decomposition and/or calcining steps. The maximum reaction temperature ranged from 850 to 1010 °C and combustion lasted less then 30 s for all systems. X-ray diffraction patterns of all systems showed broad peaks consistent with cubic inverse spinel structure of CoFe 2O 4. The absence of extra reflections in the diffraction patterns of as-prepared materials ensures phase purity. The average crystallite sizes determined from the prominent (3 1 1) peak of the diffraction using Scherre's equation and TEM micrographs consisted of ca. 27 nm in spherical morphology. FTIR spectra of the as-prepared material showed traces of organic and metallic salts byproducts. However, when the same material was washed with deionised water the byproducts were rinsed off, resulting in pure materials. Magnetic properties such as saturation magnetisation, remanence magnetisation and coercivity field measured at room temperature were 48 emu/g, 15 emu/g and 900 Oe, respectively.

  18. Tattoo-pigmented cervical lymph node that masqueraded as the sentinel lymph node in oral squamous cell carcinoma.

    PubMed

    Pinto, Amith; Wieshmann, Hulya; Triantafyllou, Asterios; Shaw, Richard

    2015-11-01

    We describe a case of a pigmented cervical lymph node mimicking the sentinel node during sentinel lymph node biopsy (SLNB) on a patient with oral squamous cell carcinoma (OSCC). The patient had extensive tattoos on his neck. This pigmented lymph node was not identified to be the sentinel lymph node using static and dynamic lymphoscintigraphy. Subsequent histological analysis revealed tattoo pigment within this lymph node. It is important during cervical SLNB to be aware that cutaneous tattoos can pigment lymph nodes. PMID:26188933

  19. Sub-20nm hybrid lithography using optical, pitch-division, and e-beam

    NASA Astrophysics Data System (ADS)

    Belledent, J.; Smayling, M.; Pradelles, J.; Pimenta-Barros, P.; Barnola, S.; Mage, L.; Icard, B.; Lapeyre, C.; Soulan, S.; Pain, L.

    2012-03-01

    A roadmap extending far beyond the current 22nm CMOS node has been presented several times. [1] This roadmap includes the use of a highly regular layout style which can be decomposed into "lines and cuts."[2] The "lines" can be done with existing optical immersion lithography and pitch division with self-aligned spacers.[3] The "cuts" can be done with either multiple exposures using immersion lithography, or a hybrid solution using either EUV or direct-write ebeam.[ 4] The choice for "cuts" will be driven by the availability of cost-effective, manufacturing-ready equipment and infrastructure. Optical lithography improvements have enabled scaling far beyond what was expected; for example, soft x-rays (aka EUV) were in the semiconductor roadmap as early as 1994 since optical resolution was not expected for sub-100nm features. However, steady improvements and innovations such as Excimer laser sources and immersion photolithography have allowed some manufacturers to build 22nm CMOS SOCs with single-exposure optical lithography. With the transition from random complex 2D shapes to regular 1D-patterns at 28nm, the "lines and cuts" approach can extend CMOS logic to at least the 7nm node. The spacer double patterning for lines and optical cuts patterning is expected to be used down to the 14nm node. In this study, we extend the scaling to 18nm half-pitch which is approximately the 10-11nm node using spacer pitch division and complementary e-beam lithography. For practical reasons, E-Beam lithography is used as well to expose the "mandrel" patterns that support the spacers. However, in a production mode, it might be cost effective to replace this step by a standard 193nm exposure and applying the spacer technique twice to divide the pitch by 3 or 4. The Metal-1 "cut" pattern is designed for a reasonably complex logic function with ~100k gates of combinatorial logic and flip-flops. Since the final conductor is defined by a Damascene process, the "cut" patterns become islands

  20. Axillary lymph node management in breast cancer with positive sentinel lymph node biopsy.

    PubMed

    Voutsadakis, Ioannis A; Spadafora, Silvana

    2015-02-10

    The surgical treatment of localized breast cancer has become progressively less aggressive over the years. The management of the axillary lymph nodes has been modified by the introduction of sentinel lymph node biopsy. Axillary dissection can be avoided in patients with sentinel lymph node negative biopsies. Based on randomized trials data, it has been proposed that no lymph node dissection should be carried out even in certain patients with sentinel lymph node positive biopsies. This commentary discusses the basis of such recommendations and cautions against a general omission of lymph node dissection in breast cancer patients with positive sentinel lymph node biopsies. Instead, an individualized approach based on axillary tumor burden and biology of the cancer should be considered. PMID:25667909

  1. Sentinel lymph nodes detection with an imaging system using Patent Blue V dye as fluorescent tracer

    NASA Astrophysics Data System (ADS)

    Tellier, F.; Steibel, J.; Chabrier, R.; Rodier, J. F.; Pourroy, G.; Poulet, P.

    2013-03-01

    Sentinel lymph node biopsy is the gold standard to detect metastatic invasion from primary breast cancer. This method can help patients avoid full axillary chain dissection, thereby decreasing the risk of morbidity. We propose an alternative to the traditional isotopic method, to detect and map the sentinel lymph nodes. Indeed, Patent Blue V is the most widely used dye in clinical routine for the visual detection of sentinel lymph nodes. A Recent study has shown the possibility of increasing the fluorescence quantum yield of Patent Blue V, when it is bound to human serum albumin. In this study we present a preclinical fluorescence imaging system to detect sentinel lymph nodes labeled with this fluorescent tracer. The setup is composed of a black and white CCD camera and two laser sources. One excitation source with a laser emitting at 635 nm and a second laser at 785 nm to illuminate the region of interest. The prototype is operated via a laptop. Preliminary experiments permitted to determine the device sensitivity in the μmol.L-1 range as regards the detection of PBV fluorescence signals. We also present a preclinical evaluation performed on Lewis rats, during which the fluorescence imaging setup detected the accumulation and fixation of the fluorescent dye on different nodes through the skin.

  2. Understanding the conductive channel evolution in Na:WO3-x-based planar devices

    NASA Astrophysics Data System (ADS)

    Shang, Dashan; Li, Peining; Wang, Tao; Carria, Egidio; Sun, Jirong; Shen, Baogen; Taubner, Thomas; Valov, Ilia; Waser, Rainer; Wuttig, Matthias

    2015-03-01

    An ion migration process in a solid electrolyte is important for ion-based functional devices, such as fuel cells, batteries, electrochromics, gas sensors, and resistive switching systems. In this study, a planar sandwich structure is prepared by depositing tungsten oxide (WO3-x) films on a soda-lime glass substrate, from which Na+ diffuses into the WO3-x films during the deposition. The entire process of Na+ migration driven by an alternating electric field is visualized in the Na-doped WO3-x films in the form of conductive channel by in situ optical imaging combined with infrared spectroscopy and near-field imaging techniques. A reversible change of geometry between a parabolic and a bar channel is observed with the resistance change of the devices. The peculiar channel evolution is interpreted by a thermal-stress-induced mechanical deformation of the films and an asymmetric Na+ mobility between the parabolic and the bar channels. These results exemplify a typical ion migration process driven by an alternating electric field in a solid electrolyte with a low ion mobility and are expected to be beneficial to improve the controllability of the ion migration in ion-based functional devices, such as resistive switching devices.An ion migration process in a solid electrolyte is important for ion-based functional devices, such as fuel cells, batteries, electrochromics, gas sensors, and resistive switching systems. In this study, a planar sandwich structure is prepared by depositing tungsten oxide (WO3-x) films on a soda-lime glass substrate, from which Na+ diffuses into the WO3-x films during the deposition. The entire process of Na+ migration driven by an alternating electric field is visualized in the Na-doped WO3-x films in the form of conductive channel by in situ optical imaging combined with infrared spectroscopy and near-field imaging techniques. A reversible change of geometry between a parabolic and a bar channel is observed with the resistance change of the

  3. [INTRAOPERATIVE DETECTION OF SENTINEL LYMPH NODES USING INFRARED IMAGING SYSTEM IN LOCAL NON-SMALL CELL CARCINOMA OF LUNG].

    PubMed

    Akopov, A L; Papayan, G V; Chistyakov, I V; Karlson, A; Gerasin, A V; Agishev, A S

    2015-01-01

    The article presents the results of the first domestic experience of intraoperative fluorescence mapping of sentinel lymph nodes in lung cancer. The research included 10 patients, who underwent surgery over the period of time from September 2013 to May 2014. After performing thoracotomy, the solution of indocyanine green (ICG) was injected using subpleural position above the tumor in 3-4 points. Fluorescence (ICG) image guided surgery was carried out by using infrared radiation (wave length 808 nm) on lung surface, root of lung, mediastinum in real time. Fluorescence lymph nodes were mapped. In case that metastatic lesions weren't revealed in sentinel lymph nodes, they weren't noted in other nodes. Method specificity consisted of 100%. Biopsy and histological study of sentinel lymph nodes mapped during fluorescence (ICG) image guided surgery could be useful for prevention of lymphodissection in patients with non-small cell carcinoma of lung. PMID:26601511

  4. Interface and grain boundary resistance of a lithium lanthanum titanate (Li3xLa2/3-xTiO3, LLTO) solid electrolyte

    NASA Astrophysics Data System (ADS)

    Uhlmann, C.; Braun, P.; Illig, J.; Weber, A.; Ivers-Tiffée, E.

    2016-03-01

    Advanced experimental setups and measurement techniques are crucial for investigating and systematically improving interface characteristics. In this study we introduce an interface-cell, which allows the systematic analysis of liquid/solid electrolyte interfaces via four-point measurements. The functionality of this setup is demonstrated by analysing the impact of parameter variations on the aqueous interface of lithium lanthanum titanate (Li3xLa2/3-xTiO3, LLTO) solid electrolytes as used in Lithium-air batteries. By variation of real operating conditions their impact on cycling performance is highlighted. Examples include temperature (0 to +25 °C) and state of charge (SoC), which induces an alteration of pH (here pH ≈ 6-14) and Li+-concentration (here 0.057 mol L-1 to 10.62 mol L-1). Interestingly, a change of the polarization resistance greater than two orders of magnitude (250 Ωcm2-25,000 Ωcm2) could be identified. The proven dependency of the interface to both the pH and Li+-concentration is explained by an H+/Li+-exchange reaction at the LLTO/H2O-interface. Additionally, we were able to determine the solely grain boundary resistance (∼250 Ωcm2 at 25 °C) of the LLTO samples, without the impact of blocking electrodes. A temperature variation revealed the activation energies of the processes to be 0.4 eV (grain boundary) and 0.46 eV (interface). These results were then critically evaluated in the context of aqueous Lithium-air batteries.

  5. EUV micro-exposure tool at 0.5 NA for sub-16 nm lithography

    SciTech Connect

    Goldstein, Michael; Hudyma, Russ; Naulleau, Patrick; Wurm, Stefan

    2008-09-26

    The resolution limit of present 0.3 NA 13.5 nm wavelength micro-exposure tools is compared to next generation lithography research requirements. Findings suggest that a successor design is needed for patterning starting at the 16 nm semiconductor process technology node. A two-mirror 0.5 NA optical design is presented, and performance expectations are established from detailed optical and lithographic simulation. Here, we report on the results from a SEMATECH program to fabricate a projection optic with an ultimate resolution limit of approximately 11 nm.

  6. Parallel node placement method by bubble simulation

    NASA Astrophysics Data System (ADS)

    Nie, Yufeng; Zhang, Weiwei; Qi, Nan; Li, Yiqiang

    2014-03-01

    An efficient Parallel Node Placement method by Bubble Simulation (PNPBS), employing METIS-based domain decomposition (DD) for an arbitrary number of processors is introduced. In accordance with the desired nodal density and Newton’s Second Law of Motion, automatic generation of node sets by bubble simulation has been demonstrated in previous work. Since the interaction force between nodes is short-range, for two distant nodes, their positions and velocities can be updated simultaneously and independently during dynamic simulation, which indicates the inherent property of parallelism, it is quite suitable for parallel computing. In this PNPBS method, the METIS-based DD scheme has been investigated for uniform and non-uniform node sets, and dynamic load balancing is obtained by evenly distributing work among the processors. For the nodes near the common interface of two neighboring subdomains, there is no need for special treatment after dynamic simulation. These nodes have good geometrical properties and a smooth density distribution which is desirable in the numerical solution of partial differential equations (PDEs). The results of numerical examples show that quasi linear speedup in the number of processors and high efficiency are achieved.

  7. Transport optimization considering the node aggregation ability

    NASA Astrophysics Data System (ADS)

    Liu, Gang; Li, Lian; Guo, Jiawei; Li, Zheng

    2015-10-01

    Using the theories of complex networks and gravitational field, we study the dynamic routing process under the framework of node gravitational field, define the equation of gravitation of travel path to data package and introduce two parameters α and γ for adjusting the dependences of transmission data on the unblocked degree of node, the transmission capacity of node and the path length. Based on the path's attraction, a gravitational field routing strategy under node connection ability constraint is proposed with considering the affect of node aggregation ability to transport process, and a parameter is used to adjust the control strength of routing process to node aggregation ability. In order to clarify the efficiency of suggested method, we introduce an order parameter η to measure the throughput of the network by the critical value of phase transition from free state to congestion state, and analyze the distribution of betweenness centrality and traffic jam. Simulation results show that, compared with the traditional shortest path routing strategy, our method greatly improve the throughput of a network, balance the network traffic load and most of the network nodes are used efficiently. Moreover, the network throughput is maximized under μ = -1, and the transmission performance of the algorithm is independent of the values of α and γ, which indicate the routing strategy is stable and reliable.

  8. Comparison of 885 nm pumping and 808 nm pumping in Nd:CNGG laser operating at 1061 nm and 935 nm

    NASA Astrophysics Data System (ADS)

    Shi, Yuxian; Li, Qinan; Zhang, Dongxiang; Feng, Baohua; Zhang, Zhiguo; Zhang, Huaijin; Wang, Jiyang

    2010-07-01

    A Nd:CNGG laser operated at 935 nm and 1061 nm pumped at 885 nm and 808 nm, respectively, is demonstrated. The 885 nm direct pumping scheme shows some advantages over the 808 nm traditional pumping scheme. It includes higher slope efficiency, lower threshold, and better beam quality at high output power. With the direct pumping, the slope efficiency increases by 43% and the threshold decreases by 10% compared with traditional pumping in the Nd:CNGG laser operated at 935 nm. When the Nd:CNGG laser operates at 1061 nm, the direct pumping increases the slope efficiency by 14% with a 20% reduction in the oscillation threshold.

  9. Nanocrystals of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, and I): Novel Optoelectronic Materials Showing Bright Emission with Wide Color Gamut

    PubMed Central

    2015-01-01

    Metal halides perovskites, such as hybrid organic–inorganic CH3NH3PbI3, are newcomer optoelectronic materials that have attracted enormous attention as solution-deposited absorbing layers in solar cells with power conversion efficiencies reaching 20%. Herein we demonstrate a new avenue for halide perovskites by designing highly luminescent perovskite-based colloidal quantum dot materials. We have synthesized monodisperse colloidal nanocubes (4–15 nm edge lengths) of fully inorganic cesium lead halide perovskites (CsPbX3, X = Cl, Br, and I or mixed halide systems Cl/Br and Br/I) using inexpensive commercial precursors. Through compositional modulations and quantum size-effects, the bandgap energies and emission spectra are readily tunable over the entire visible spectral region of 410–700 nm. The photoluminescence of CsPbX3 nanocrystals is characterized by narrow emission line-widths of 12–42 nm, wide color gamut covering up to 140% of the NTSC color standard, high quantum yields of up to 90%, and radiative lifetimes in the range of 1–29 ns. The compelling combination of enhanced optical properties and chemical robustness makes CsPbX3 nanocrystals appealing for optoelectronic applications, particularly for blue and green spectral regions (410–530 nm), where typical metal chalcogenide-based quantum dots suffer from photodegradation. PMID:25633588

  10. EUV actinic defect inspection and defect printability at the sub-32 nm half pitch

    SciTech Connect

    Huh, Sungmin; Kearney, Patrick; Wurm, Stefan; Goodwin, Frank; Han, Hakseung; Goldberg, Kenneth; Mochi, Iacopp; Gullikson, Eric M.

    2009-08-01

    Extreme ultraviolet (EUV) mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360, operated at SEMA TECH's Mask Blank Development Center (MBDC) in Albany, NY, has a sensitivity to multilayer defects down to 40-45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for a next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. Defect mitigation technology is proposed to take advantage of mask blanks with some defects. This technology will reduce the cost of ownership of EUV mask blanks. This paper will also discuss the kind of infrastructure that will be required for the development and mass production stages.

  11. Inguinal Lymph Node Anthracosis: A Case Report

    PubMed Central

    Soto, Carlos Alberto

    2016-01-01

    Summary: Anthracosis is defined as black, dense pigments in tissues, usually carbon deposits. We, as surgeons, have to make decisions during surgery to the best of our knowledge and based on what the literature provides us. We present the case of a 30-year-old female patient who underwent abdominoplasty. During surgery, bilateral inguinal pigmented and enlarged lymph nodes were seen. Biopsy of the nodes was done to rule out any malignancy. The results showed tattoo pigments on all lymph nodes. We present this case as tattoo pigment migration, which has been rarely described. PMID:27536493

  12. Checkpointing for a hybrid computing node

    DOEpatents

    Cher, Chen-Yong

    2016-03-08

    According to an aspect, a method for checkpointing in a hybrid computing node includes executing a task in a processing accelerator of the hybrid computing node. A checkpoint is created in a local memory of the processing accelerator. The checkpoint includes state data to restart execution of the task in the processing accelerator upon a restart operation. Execution of the task is resumed in the processing accelerator after creating the checkpoint. The state data of the checkpoint are transferred from the processing accelerator to a main processor of the hybrid computing node while the processing accelerator is executing the task.

  13. Laboratory Detection of IZnCH_{3} (X^{1}A_{1}) : Further Evidence for Zinc Insertion

    NASA Astrophysics Data System (ADS)

    Bucchino, Matthew P.; Young, Justin P.; Sheridan, Phil M.; Ziurys, Lucy M.

    2013-06-01

    Millimeter-wave direct absorption techniques were used to record the pure rotational spectrum of IZnCH_{3} (X^{1}A_{1}). This species was produced by the reaction of zinc vapor with ICH_{3} in the presence of a DC discharge. Rotational transitions ranging from J = 109 {→} 108 to J = 122 {→} 121 were recorded for I^{64}ZnCH_{3} and I^{66}ZnCH_{3} in the frequency range of 250{-290} GHz. The Ka = 0{-4} components were measured for each transition, with the K-ladder structure and nuclear spin statistics indicative of a symmetric top. As with HZnCH_{3} (X^{1}A_{1}), the detection of IZnCH_{3} provides further evidence for a zinc insertion process.

  14. Fixing All Moduli for M-Theory on K3xK3

    SciTech Connect

    Aspinwall, Paul S.; Kallosh, Renata; /Stanford U., Phys. Dept.

    2005-06-15

    We analyze M-theory compactified on K3 x K3 with fluxes preserving half the supersymmetry and its F-theory limit, which is dual to an orientifold of the type IIB string on K3 x (T{sup 2}/Z{sub 2}). The geometry of attractive K3 surfaces plays a significant role in the analysis. We prove that the number of choices for the K3 surfaces is finite and we show how they can be completely classified. We list the possibilities in one case. We then study the instanton effects and see that they will generically fix all of the moduli. We also discuss situations where the instanton effects might not fix all the moduli.

  15. Interaction between body weight status and walking speed in steps monitoring by GT3X accelerometer.

    PubMed

    Bélanger, Marie-Lyse; Kestens, Yan; Gilbert, Jo-Anne; Tremblay, Angelo; Mathieu, Marie-Eve

    2014-08-01

    The measurement error of the step count function of the ActiGraph GT3X accelerometer was assessed at different walking speeds in 12 obese and 16 nonobese individuals. In comparison with visual verification, the accelerometer step count function measurement error was larger for obese individuals walking at low speeds (2.5 km·h(-1)). This error equated to an approximate 50% underestimation at these speeds. PMID:24823315

  16. Magnetic and Structural Properties of Rapidly Quenched Tetragonal Mn3-xGa Nanostructures

    SciTech Connect

    Huh, Y; Kharel, P; Shah, VR; Krage, E; Skomski, R; Shield, JE; Sellmyer, DJ

    2013-07-01

    Nanostructured Mn3-x Ga ribbons with x = 0, 0.4, 0.9 and 1.1 were prepared using arc-melting, melt-spinning and annealing. As-spun samples crystallized into hexagonal D0(19) and cubic L2(1) Heusler crystal structures based on the concentration of Mn in Mn3-xGa. Upon vacuum-annealing the samples at 450 degrees C for about 50 hours, both the hexagonal and cubic structures transformed into a tetragonal D0(22) structure. High-temperature x-ray diffraction and high-temperature magnetometry showed that the samples with low Mn content (Mn-1.9 Ga and Mn-2.1 Ga) retain their tetragonal structure up to 850 K but the samples with high Mn concentrations (Mn-2.6 Ga and Mn-3.0 Ga) undergo a structural phase transition from tetragonal to hexagonal phases around 800 K. The magnetic properties of Mn3-x Ga ribbons were very sensitive to Mn concentration, where the magnetization and anisotropy energy increased and the coercivity decreased as x increased from 0 to 1.1. Although the Curie temperatures of Mn-2.6 Ga and Mn-3.0 Ga samples could not be determined because of the structural phase transition, the Curie temperature decreased with increasing x in Mn3-x Ga. The maximum magnetization of 57 emu/g (300 emu/cm(3)) and the coercivity of 6.5 kOe were measured in the Mn-1.9 Ga and Mn-3.0 Ga ribbons, respectively.

  17. Design of 3x3 focusing array for heavy ion driver. Final report on CRADA

    SciTech Connect

    Martovetsky, N N

    2005-03-30

    This memo presents a design of a 3 x 3 quadrupole array for HIF. It contains 3 D magnetic field computations of the array build with racetrack coils with and without different shields. It is shown that it is possible to have a low error magnetic field in the cells and shield the stray fields to acceptable levels. The array design seems to be a practical solution to any size array for future multi-beam heavy ion fusion drivers.

  18. Near infrared photoacoustic detection of sentinel lymph nodes with gold nanobeacons.

    PubMed

    Pan, Dipanjan; Pramanik, Manojit; Senpan, Angana; Ghosh, Soumojit; Wickline, Samuel A; Wang, Lihong V; Lanza, Gregory M

    2010-05-01

    Detection of sentinel lymph node (SLN) using photoacoustic imaging is an emerging technique for noninvasive axillary staging of breast cancer. Due to the absence of intrinsic contrast inside the lymph nodes, exogenous contrast agents are used for photoacoustic detection. In this work, we have demonstrated near infrared detection of SLN with gold nanobeacons (GNBs) providing the photoacoustic contrast in a rodent model. We found that size dictates the in vivo characteristics of these nanoparticles in SLN imaging. Larger nanobeacons with high payloads of gold were not as efficient as smaller size nanobeacons with lower payloads for this purpose. Colloidal GNBs were designed as a nanomedicine platform with "soft" nature that is amenable to bio-elimination, an essential feature for in vivo efficacy and safety. The GNBs were synthesized as lipid- or polymer-encapsulated colloidal particles incorporating tiny gold nanoparticles (2-4 nm) in three tunable sizes (90 nm, 150 nm and 290 nm). Smaller GNBs were noted trafficking through the lymphatic system and accumulating more efficiently in the lymph nodes in comparison to the bigger nanoagents. At 20 min, the GNBs reached the SLN and were no longer observed within the draining lymphatic vessel. Within 1 h post-injection, the contrast ratio of the lymph nodes with the surrounding blood vessels was 9:1. These findings were also supported by analytical measurements of the ex vivo tissue samples. Results indicate that cumulative nanoparticle deposition in lymph nodes is size dependent and that high payloads of gold, although offering greater contrast in vitro, may yield nanoagents with poor intradermal migration and lymphatic transport characteristics. PMID:20172607

  19. Front-end-of-line process development using 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Pollentier, Ivan K.; Ercken, Monique; Eliat, Astrid; Delvaux, Christie; Jaenen, Patrick; Ronse, Kurt G.

    2001-04-01

    It is expected that 193nm lithography will be introduced in front-end-of-line processing for all critical layers at the 100nm node, and possibly also for some layers at the 130nm node, where critical layers are required to have the lowest mask cost. These processes are currently being investigated at IMEC for CMOS logic applications. While the lithographic performance of 193 nm resists has improved significantly in the last year, most materials still have important processing issues that need further improvement. On one hand, the resists material itself suffers from for example poor dry etch resistance and SEM CD shrinkage. On the other hand, interaction with other materials such as SiON inorganic ARCs becomes more challenging in terms of footing behavior, adhesion, and line edge roughness. In this paper, the 193nm processing experience gained at IMEC will be outlined, as well as solutions for manufacturability. Front- end-of-line integration results will also be shown, mainly for gate applications. It will be demonstrated that currently several commercial resist are capable of printing 130nm gates within the +/- 10 percent CD tolerance, even after gate etch. The impact of line edge roughness will also be discussed. Finally, the feasibility of printing 100nm logic patterns using only binary masks has been demonstrated, including gate etch.

  20. Structural defects and microindentation analysis of zone melted Bi2Te3-xSex whiskers

    NASA Astrophysics Data System (ADS)

    Jariwala, Bhakti; Shah, Dimple V.

    2012-08-01

    The dislocation density and microhardness of Bi2Te3-xSex (x=0-0.3 at% Se) grown by the zone melting method have been investigated. We also have got the whiskers of Bi2Te3-xSex at the end of ampoule during the growth process. SEM was characterized for surface analysis of the grown whisker. The length of the grown whiskers was around 10 mm in the direction of the crystallographic c-axis. Concentric pairs of dislocation triangle were observed on the as-grown surfaces of short hexagonal prisms. A systematic study of dislocations in these crystals was carried out by the chemical etching technique. Dislocation etching was achieved on all crystal planes examined using a saturated solution of citric acid and nitric acid as the etchant. The dislocation etchant has been found to give reproducible etch-pits on the cleavage surface. The use of citric acid and nitric acid proved to be especially advantageous for the basal plane, producing etched pits suitable for dislocation etch pit counting. The effects of Se doping, annealing and quenching on the mechanical properties have also been studied on the (001) faces of Bi2Te3-xSex.

  1. WO3-x Nanoplates Grown on Carbon Nanofibers for an Efficient Electrocatalytic Hydrogen Evolution Reaction.

    PubMed

    Chen, JiaDong; Yu, DanNi; Liao, WeiSha; Zheng, MengDan; Xiao, LongFei; Zhu, Han; Zhang, Ming; Du, MingLiang; Yao, JuMing

    2016-07-20

    The search for non-noble metal catalysts with high activity for the hydrogen evolution reaction (HER) is crucial for efficient hydrogen production at low cost and on a large scale. Herein, we report a novel WO3-x catalyst synthesized on carbon nanofiber mats (CFMs) by electrospinning and followed by a carbonization process in a tubal furnace. The morphology and composition of the catalysts were tailored via a simple method, and the hybrid catalyst mats were used directly as cathodes to investigate their HER performance. Notably, the as-prepared catalysts exhibit substantially enhanced activity for the HER, demonstrating a small overpotential, a high exchange current density, and a large cathodic current density. The remarkable electrocatalytic performances result from the poor crystallinity of WO3-x, the high electrical conductivity of WO3-x, and the use of electrospun CNFs. The present work outlines a straightforward approach for the synthesis of transition metal oxide (TMO)-based carbon nanofiber mats with promising applications for the HER. PMID:27356101

  2. Unexpected structural softening of interstitial boron solid solution WB{sub 3+x}

    SciTech Connect

    Wu, Hao; Sun, Hong E-mail: chen@physics.unlv.edu; Chen, Changfeng E-mail: chen@physics.unlv.edu

    2014-11-24

    Using first-principles calculations, we reveal an unexpected structural softening in a recently proposed WB{sub 3+x} structural model that tries to explain the X-ray diffraction, high resolution TEM, pressure dependence of the normalized lattice c/a ratio, and hardness experimental results of the synthesized tungsten boride compounds with a nominal composition WB{sub 4}. We show that the interstitial boron in WB{sub 3+x}, which was proposed to strengthen the covalent bonding network, unexpectedly weakens the atomic bonding, resulting in a large reduction of its indentation strength to well below that of WB{sub 3}. This is in direct contradiction to the experimental results showing that synthesized WB{sub 4} is harder than WB{sub 3}. The unusual structural softening is attributed to the unique three-center covalent bonding formed by the interstitial boron atoms that can easily deform under indentation. Our results show that the proposed interstitial boron solid solution WB{sub 3+x} structure is incompatible with experimental results, which calls for further investigations to determine the crystal structure of the synthesized WB{sub 4}.

  3. Oxygen Adsorption on the 6H-SiC(0001) (3x3) Surface

    NASA Astrophysics Data System (ADS)

    Cui, Y.; Li, L.

    2001-03-01

    Silicon carbide (SiC) is an attractive semiconductor for applications requiring a wide bandgap, high temperature/high power and chemical inertness. An investigation of the initial stages of oxidation of SiC, therefore, is important for optimizing the growth of thin, insulating oxide layers in SiC devices. In the present work, scanning tunneling microscopy (STM) has been used to study the initial stages of oxygen adsorption at room temperature on the Si-rich (3x3) surface of 6H-SiC(0001). The (3x3) surface is prepared by a two-step method of etching in hydrogen atmosphere at 1500 ^oC and annealing under Si beam in UHV at 950 ^oC. Upon adsorption of oxygen on the (3x3) surface, only one reaction product has been identified in the STM topographs, which appears as bright sites in the empty-state mode. These bright sites are attributed to the oxygen atoms inserted in one of the Si adatom's back bonds. These results and their implications for oxide growth on SiC will be presented at the meeting.

  4. Understanding the conductive channel evolution in Na:WO(3-x)-based planar devices.

    PubMed

    Shang, Dashan; Li, Peining; Wang, Tao; Carria, Egidio; Sun, Jirong; Shen, Baogen; Taubner, Thomas; Valov, Ilia; Waser, Rainer; Wuttig, Matthias

    2015-04-14

    An ion migration process in a solid electrolyte is important for ion-based functional devices, such as fuel cells, batteries, electrochromics, gas sensors, and resistive switching systems. In this study, a planar sandwich structure is prepared by depositing tungsten oxide (WO(3-x)) films on a soda-lime glass substrate, from which Na(+) diffuses into the WO(3-x) films during the deposition. The entire process of Na(+) migration driven by an alternating electric field is visualized in the Na-doped WO(3-x) films in the form of conductive channel by in situ optical imaging combined with infrared spectroscopy and near-field imaging techniques. A reversible change of geometry between a parabolic and a bar channel is observed with the resistance change of the devices. The peculiar channel evolution is interpreted by a thermal-stress-induced mechanical deformation of the films and an asymmetric Na(+) mobility between the parabolic and the bar channels. These results exemplify a typical ion migration process driven by an alternating electric field in a solid electrolyte with a low ion mobility and are expected to be beneficial to improve the controllability of the ion migration in ion-based functional devices, such as resistive switching devices. PMID:25766380

  5. Exome sequencing identifies somatic mutations of DDX3X in natural killer/T-cell lymphoma.

    PubMed

    Jiang, Lu; Gu, Zhao-Hui; Yan, Zi-Xun; Zhao, Xia; Xie, Yin-Yin; Zhang, Zi-Guan; Pan, Chun-Ming; Hu, Yuan; Cai, Chang-Ping; Dong, Ying; Huang, Jin-Yan; Wang, Li; Shen, Yang; Meng, Guoyu; Zhou, Jian-Feng; Hu, Jian-Da; Wang, Jin-Fen; Liu, Yuan-Hua; Yang, Lin-Hua; Zhang, Feng; Wang, Jian-Min; Wang, Zhao; Peng, Zhi-Gang; Chen, Fang-Yuan; Sun, Zi-Min; Ding, Hao; Shi, Ju-Mei; Hou, Jian; Yan, Jin-Song; Shi, Jing-Yi; Xu, Lan; Li, Yang; Lu, Jing; Zheng, Zhong; Xue, Wen; Zhao, Wei-Li; Chen, Zhu; Chen, Sai-Juan

    2015-09-01

    Natural killer/T-cell lymphoma (NKTCL) is a malignant proliferation of CD56(+) and cytoCD3(+) lymphocytes with aggressive clinical course, which is prevalent in Asian and South American populations. The molecular pathogenesis of NKTCL has largely remained elusive. We identified somatic gene mutations in 25 people with NKTCL by whole-exome sequencing and confirmed them in an extended validation group of 80 people by targeted sequencing. Recurrent mutations were most frequently located in the RNA helicase gene DDX3X (21/105 subjects, 20.0%), tumor suppressors (TP53 and MGA), JAK-STAT-pathway molecules (STAT3 and STAT5B) and epigenetic modifiers (MLL2, ARID1A, EP300 and ASXL3). As compared to wild-type protein, DDX3X mutants exhibited decreased RNA-unwinding activity, loss of suppressive effects on cell-cycle progression in NK cells and transcriptional activation of NF-κB and MAPK pathways. Clinically, patients with DDX3X mutations presented a poor prognosis. Our work thus contributes to the understanding of the disease mechanism of NKTCL. PMID:26192917

  6. Structure and magnetic properties of PrIn3- x Co x

    NASA Astrophysics Data System (ADS)

    He, Qiang; Guo, Yongquan

    2016-04-01

    The synthesis, crystal structure and magnetic properties of PrIn3- x Co x have been systematically investigated using X-ray diffraction and magnetic measurements. Co doping into PrIn3 causes the presence of satellite peaks, which has been indexed as a hexagonal structure. Rietveld's structural refinement shows this structure is an isomorphic structure of CaIn2 type with a space group of P63/mmc and Z = 2. There are two non-equivalent crystal positions in one unit cell, which are occupied by 2Pr and 4(In, Co), respectively. Doping of Co into PrIn3 induces room temperature ferromagnetic order, and the magnetization increases with increasing Co content. It is suggested that the ferromagnetism in PrIn3- x Co x is caused by the spin-spin interactions between Co and Co or Co and Pr. The magnetic moment increase of PrIn3- x Co x could result from the partial substitution of non-magnetic element In by magnetic element Co in the host material through dilute doping of Co, and thus, a net moment is produced.

  7. Superconductivity in a New Pseudo-Binary Li2B(Pd1-xPtx)3 (x=0--1) Boride System

    NASA Astrophysics Data System (ADS)

    Badica, Petre; Kondo, Takaaki; Togano, Kazumasa

    2005-03-01

    Recently we have found superconductivity in a cubic antiperovskite-like compound Li2BPd3. A new pseudo-binary complete solid solution Li2B(Pd1-xPtx)3, x=0--1 with similar structure has been synthesized and observation of superconductivity in the entire x-range is reported. Our results strongly suggest that superconductivity is of bulk type. Critical temperature Tc is decreasing approximately linearly with amount (x) of Pt from 7.2-8 K for Li2BPd3 to 2.2-2.8 K for Li2BPt3. From isothermal magnetization (M-H) measurements, lower critical fields Hc1 (138 Oe/x=0, 38 Oe/x=1), upper critical fields Hc2WHH (3.4 T/x=0, 1 T/x=1), coherence length ξ(0) (9.8 nm/x=0, 17.9 nm/x=1) and penetration depth λ(0) (190 nm/x=0, 364 nmx=1) were estimated and shown to follow approximately linear dependencies with x, either. Structure and superconducting similarities with MgCNi3, viewed as a bridge between low and high Tc superconductors are increasing the expectations that Li2B(Pd1-xPtx)3, x=0--1 superconductor can be included in the same class of ‘intermediate’ superconductors. For x=0--1 a weak fish-tail effect was observed at low and intermediate fields. Apart from this effect, some samples for x=1 have shown magnetization jumps at fields close to Hc2.

  8. Earth transportation node requirements and design

    NASA Technical Reports Server (NTRS)

    Hook, W. Ray; Ayers, J. Kirk; Cirillo, William M.

    1988-01-01

    The objective of this paper is to establish the requirements for an inhabited earth orbiting transportation node and to develop design concepts for such a facility. The use of an earth orbiting transportation node is required to support many of the space flight projects proposed for the beginning of the 21st century. The requirements for such an orbiting facility are derived from the missions which they support. Future missions investigated include automated and human exploration of the solar system, support of a lunar base, and missions to planet earth. Design concepts are presented for transportation nodes based on a variation of the current Space Station Freedom design. Designs accommodate a variety of earth-to-orbit, orbit-to-orbit, and deep-space probe transportation systems. Finally, the technology needed to develop such a transportation node is summarized.

  9. Percutaneous Vertebroplasty in Painful Schmorl Nodes

    SciTech Connect

    Masala, Salvatore Pipitone, Vincenzo; Tomassini, Marco; Massari, Francesco; Romagnoli, Andrea; Simonetti, Giovanni

    2006-02-15

    The Schmorl node represents displacement of intervertebral disc tissue into the vertebral body. Both Schmorl nodes and degenerative disc disease are common in the human spine. We performed a retrospective study, for the period from January 2003 to February 2005, evaluating 23 patients affected by painful Schmorl nodes, who underwent in our department percutaneous transpedicular injection of polymethylmethacrylate (vertebroplasty) in order to solve their back pain not responsive to medical and physical management. Eighteen patients reported improvement of the back pain and no one reported a worsening of symptoms. Improvement was swift and persistent in reducing symptoms. Painful Schmorl nodes, refractory to medical or physical therapy, should be considered as a new indication within those vertebral lesions adequately treatable utilizing Vertebroplasty procedure.

  10. Synchronizing compute node time bases in a parallel computer

    DOEpatents

    Chen, Dong; Faraj, Daniel A; Gooding, Thomas M; Heidelberger, Philip

    2014-12-30

    Synchronizing time bases in a parallel computer that includes compute nodes organized for data communications in a tree network, where one compute node is designated as a root, and, for each compute node: calculating data transmission latency from the root to the compute node; configuring a thread as a pulse waiter; initializing a wakeup unit; and performing a local barrier operation; upon each node completing the local barrier operation, entering, by all compute nodes, a global barrier operation; upon all nodes entering the global barrier operation, sending, to all the compute nodes, a pulse signal; and for each compute node upon receiving the pulse signal: waking, by the wakeup unit, the pulse waiter; setting a time base for the compute node equal to the data transmission latency between the root node and the compute node; and exiting the global barrier operation.

  11. Synchronizing compute node time bases in a parallel computer

    DOEpatents

    Chen, Dong; Faraj, Daniel A; Gooding, Thomas M; Heidelberger, Philip

    2015-01-27

    Synchronizing time bases in a parallel computer that includes compute nodes organized for data communications in a tree network, where one compute node is designated as a root, and, for each compute node: calculating data transmission latency from the root to the compute node; configuring a thread as a pulse waiter; initializing a wakeup unit; and performing a local barrier operation; upon each node completing the local barrier operation, entering, by all compute nodes, a global barrier operation; upon all nodes entering the global barrier operation, sending, to all the compute nodes, a pulse signal; and for each compute node upon receiving the pulse signal: waking, by the wakeup unit, the pulse waiter; setting a time base for the compute node equal to the data transmission latency between the root node and the compute node; and exiting the global barrier operation.

  12. A new measurement of the cosmic ray energy spectrum between 3 x 10 to the 15th power eV and 3 x 10 to the 16th power eV

    NASA Technical Reports Server (NTRS)

    Gregory, A. G.; Patterson, J. R.; Protheroe, R. J.

    1985-01-01

    A new Cerenkov photon density spectrum measurement is reported. The derivation of the primary cosmic ray energy spectrum for energies from 3x10 to the 15th power eV to 3x10 to the 16th power eV are presented.

  13. Sinus node dysfunction complicating viper bite.

    PubMed

    Agarwal, Ashish; Kumar, Tarun; Ravindranath, Khandenahally S; Bhat, Prabhavathi; Manjunath, Cholenahally N; Agarwal, Neena

    2015-02-01

    Viper venom toxicities comprise mainly bleeding disorders and nephrotoxicity. Cardiotoxicity is a rare manifestation of viper bite. We describe the case of a previously healthy 35-year-old man who developed coagulopathy and sinus node dysfunction following a viper bite. Electrocardiography showed sinus arrest and junctional escape rhythm. This is the first account of sinus node dysfunction caused by a viper bite. PMID:24887872

  14. International Lunar Network (ILN) Anchor Nodes

    NASA Technical Reports Server (NTRS)

    Cohen, Barbara A.

    2008-01-01

    This slide presentation reviews what we know about the interior and surface of the moon and the need to establish a robotic set of geophysical monitoring stations on the surface of the Moon for the purpose of providing significant scientific value to the exploration of the Moon. The ILN Anchor Nodes will provide the backbone of the network in a way that accomplishes new science and allows other nodes to be flexible contributors to the network.

  15. Cervical lymph node diseases in children

    PubMed Central

    Lang, Stephan; Kansy, Benjamin

    2014-01-01

    The lymph nodes are an essential part of the body’s immune system and as such are affected in many infectious, autoimmune, metabolic and malignant diseases. The cervical lymph nodes are particularly important because they are the first drainage stations for key points of contact with the outside world (mouth/throat/nose/eyes/ears/respiratory system) – a critical aspect especially among children – and can represent an early clinical sign in their exposed position on a child’s slim neck. Involvement of the lymph nodes in multiple conditions is accompanied by a correspondingly large number of available diagnostic procedures. In the interests of time, patient wellbeing and cost, a careful choice of these must be made to permit appropriate treatment. The basis of diagnostic decisions is a detailed anamnesis and clinical examination. Sonography also plays an important role in differential diagnosis of lymph node swelling in children and is useful in answering one of the critical diagnostic questions: is there a suspicion of malignancy? If so, full dissection of the most conspicuous lymph node may be necessary to obtain histological confirmation. Diagnosis and treatment of childhood cervical lymph node disorders present the attending pediatric and ENT physicians with some particular challenges. The spectrum of differential diagnoses and the varying degrees of clinical relevance – from banal infections to malignant diseases – demand a clear and considered approach to the child’s individual clinical presentation. Such an approach is described in the following paper. PMID:25587368

  16. Signaling completion of a message transfer from an origin compute node to a target compute node

    DOEpatents

    Blocksome, Michael A.

    2011-02-15

    Signaling completion of a message transfer from an origin node to a target node includes: sending, by an origin DMA engine, an RTS message, the RTS message specifying an application message for transfer to the target node from the origin node; receiving, by the origin DMA engine, a remote get message containing a data descriptor for the message and a completion notification descriptor, the completion notification descriptor specifying a local memory FIFO data transfer operation for transferring data locally on the origin node; inserting, by the origin DMA engine in an injection FIFO buffer, the data descriptor followed by the completion notification descriptor; transferring, by the origin DMA engine to the target node, the message in dependence upon the data descriptor; and notifying, by the origin DMA engine, the application that transfer of the message is complete in dependence upon the completion notification descriptor.

  17. Signaling completion of a message transfer from an origin compute node to a target compute node

    DOEpatents

    Blocksome, Michael A.; Parker, Jeffrey J.

    2011-05-24

    Signaling completion of a message transfer from an origin node to a target node includes: sending, by an origin DMA engine, an RTS message, the RTS message specifying an application message for transfer to the target node from the origin node; receiving, by the origin DMA engine, a remote get message containing a data descriptor for the message and a completion notification descriptor, the completion notification descriptor specifying a local direct put transfer operation for transferring data locally on the origin node; inserting, by the origin DMA engine in an injection FIFO buffer, the data descriptor followed by the completion notification descriptor; transferring, by the origin DMA engine to the target node, the message in dependence upon the data descriptor; and notifying, by the origin DMA engine, the application that transfer of the message is complete in dependence upon the completion notification descriptor.

  18. Uniform Strain Elements for Three-Node Triangular and Four-Node Tetrahedral Meshes

    SciTech Connect

    Dohrmann, C.R.; Heinstein, M.W.; Jung, J.; Key, S.W.; Witkowski, W.R.

    1999-03-02

    A family of uniform strain elements is presented for three-node triangular and four-node tetrahedral meshes. The elements use the linear interpolation functions of the original mesh, but each element is associated with a single node. As a result, a favorable constraint ratio for the volumetric response is obtained for problems in solid mechanics. The uniform strain elements do not require the introduction of additional degrees of freedom and their performance is shown to be significantly better than that of three-node triangular or four-node tetrahedral elements. In addition, nodes inside the boundary of the mesh are observed to exhibit superconvergent behavior for a set of example problems.

  19. Dynamically reassigning a connected node to a block of compute nodes for re-launching a failed job

    SciTech Connect

    Budnik, Thomas A.; Knudson, Brant L.; Megerian, Mark G.; Miller, Samuel J.; Stockdell, William M.

    2012-03-20

    Methods, systems, and products for dynamically reassigning a connected node to a block of compute nodes for re-launching a failed job that include: identifying that a job failed to execute on the block of compute nodes because connectivity failed between a compute node assigned as at least one of the connected nodes for the block of compute nodes and its supporting I/O node; and re-launching the job, including selecting an alternative connected node that is actively coupled for data communications with an active I/O node; and assigning the alternative connected node as the connected node for the block of compute nodes running the re-launched job.

  20. Role of dynamic sentinel node biopsy in carcinoma penis with or without palpable nodes

    PubMed Central

    Kathiresan, N.; Raja, Anand; Ramachandran, Krishna Kumar; Sundersingh, Shirley

    2016-01-01

    Introduction: We aimed to evaluate the role of dynamic sentinel node biopsy (DSLNB) in patients diagnosed with carcinoma penis and clinically N0 disease using superficial inguinal dissection as the standard staging modality. Materials and Methods: Twenty consecutive men (40 groins) with carcinoma penis having clinically N0 status were enrolled in the study. Patients underwent DSLNB if fine needle aspiration cytology from the groin nodes was negative, followed by injection of radiocolloid and blue dye. The sentinel lymph node(s) were harvested. The inguinal incision was then extended and a modified superficial inguinal dissection was performed and all nodes were labeled separately and sent for frozen section. A completion deep inguinal with pelvic dissection was performed if any of the nodes were reported positive for malignancy. Results: The median age of the patients was 52.5 years. Ten patients were smokers. Phimosis was present in five patients. Lesions were present over the glans penis and shaft in 18 and two patients, respectively. Wide local excision, partial penectomy and total penectomy were performed in one, 15 and four patients, respectively. Clinically palpable nodes were found in 19 groins. Median follow-up was 26 months. Nodes were positive in 10 groins. DSLNB missed the sentinel node in one groin. The accuracy and false-negative rate of DSLNB was 97.5% and 10%, respectively. Conclusion: DSLNB is a useful and reliable technique to identify the involved node(s) in patients diagnosed as having carcinoma penis with clinical N0 status (with or without palpable nodes). It helps to avoid the morbidity associated with a staging inguinal dissection in these patients. PMID:26941496

  1. Flexible electrochromics: magnetron sputtered tungsten oxide (WO3-x) thin films on Lexan (optically transparent polycarbonate) substrates

    NASA Astrophysics Data System (ADS)

    Uday Kumar, K.; Murali, Dhanya S.; Subrahmanyam, A.

    2015-06-01

    Tungsten oxide (WO3-x) based electrochromics on flexible substrates is a topic of recent interest. The present communication reports the electrochromic properties of WO3-x thin films grown on lexan, an optically transparent polycarbonate thermoplastic substrate. The WO3-x films are prepared at room temperature (300 K) by the reactive DC magnetron sputtering technique. The physical properties of metal oxide thin films are known to be controlled by the oxygen stoichiometry of the film. In the present work, the WO3-x thin films are prepared by varying the oxygen flow rates. All the WO3-x thin films are amorphous in nature. The electrochromic performance of the WO3-x thin films is evaluated by cyclic voltammetry measurements on tin doped indium oxide (ITO) coated lexan and glass substrates. The optical band gap of WO3-x thin films grown on lexan substrates (at any given oxygen flow rate) is significantly higher than those grown on glass substrates. The coloration efficiency of WO3-x thin films (at an oxygen flow rate of 10 sccm) on lexan substrates is: 143.9 cm2 C-1 which is higher compared to that grown on glass: 90.4 cm2 C-1.

  2. Implementation of Multiple Host Nodes in Wireless Sensing Node Network System for Landslide Monitoring

    NASA Astrophysics Data System (ADS)

    Abas, Faizulsalihin bin; Takayama, Shigeru

    2015-02-01

    This paper proposes multiple host nodes in Wireless Sensing Node Network System (WSNNS) for landslide monitoring. As landslide disasters damage monitoring system easily, one major demand in landslide monitoring is the flexibility and robustness of the system to evaluate the current situation in the monitored area. For various reasons WSNNS can provide an important contribution to reach that aim. In this system, acceleration sensors and GPS are deployed in sensing nodes. Location information by GPS, enable the system to estimate network topology and enable the system to perceive the location in emergency by monitoring the node mode. Acceleration sensors deployment, capacitate this system to detect slow mass movement that can lead to landslide occurrence. Once deployed, sensing nodes self-organize into an autonomous wireless ad hoc network. The measurement parameter data from sensing nodes is transmitted to Host System via host node and "Cloud" System. The implementation of multiple host nodes in Local Sensing Node Network System (LSNNS), improve risk- management of the WSNNS for real-time monitoring of landslide disaster.

  3. Wafer topography modeling for ionic implantation mask correction dedicated to 2x nm FDSOI technologies

    NASA Astrophysics Data System (ADS)

    Michel, Jean-Christophe; Le Denmat, Jean-Christophe; Sungauer, Elodie; Robert, Frédéric; Yesilada, Emek; Armeanu, Ana-Maria; Entradas, Jorge; Sturtevant, John L.; Do, Thuy; Granik, Yuri

    2013-04-01

    Reflection by wafer topography and underlying layers during optical lithography can cause unwanted exposure in the resist [1]. This wafer stack effect phenomenon which is neglected for larger nodes than 45nm, is becoming problematic for 32nm technology node and below at the ionic implantation process. This phenomenon is expected to be attenuated by the use of anti-reflecting coating but increases process complexity and adds cost and cycle time penalty. As a consequence, an OPC based solution is today under evaluation to cope with stack effects involved in ionic implantation patterning [2] [3]. For the source drain (SD) ionic implantation process step on 28nm Fully Depleted Silicon-on-Insulator (FDSOI) technology, active silicon areas, poly silicon patterns, Shallow Trench Isolation (STI), Silicon-on-Insulator (SOI) areas and the transitions between these different regions result in significant SD implant pattern critical dimension variations. The large number of stack variations involved in these effects implies a complex modeling to simulate pattern degradations. This paper deals with the characterization of stack effects on 28nm node using SOI substrates. The large number of measurements allows to highlight all individual and combined stack effects. A new modeling flow has been developed in order to generate wafer stack aware OPC model. The accuracy and the prediction of the model is presented in this paper.

  4. 3X compound parabolic concentrating (CPC) solar energy collector. Final technical report

    SciTech Connect

    Ballheim, R.W.

    1980-04-25

    Chamberlain engineers designed a 3X compound parabolic concentrating (CPC) collector for the subject contract. The collector is a completely housed, 105.75 x 44.75 x 10.23-inch, 240-pound unit with six each evacuated receiver assemblies, a center manifold and a one-piece glass cover. A truncated version of a CPC trough reflector system and the General Electric Company tubular evacuated receiver have been integrated with a mass producible collector design suitable for operation at 250 to 450/sup 0/F. The key criterion for optimization of the design was minimization of the cost per Btu collected annually at an operating temperature of 400/sup 0/F. The reflector is a 4.1X design truncated to a total height of 8.0 inches with a resulting actual concentration ratio of 2.6 to 1. The manifold is an insulated area housing the fluid lines which connect the six receivers in series with inlet and outlet tubes extending from one side of the collector at the center. The reflectors are polished, anodized aluminum which are shaped by the roll form process. The housing is painted, galvanized steel, and the cover glass is 3/16-inch thick tempered, low iron glass. The collector requires four slope adjustments per year for optimum effectiveness. Chamberlain produced ten 3X CPC collectors for the subject contract. Two collectors were used to evaluate assembly procedures, six were sent to the project officer in Albuquerque, New Mexico, one was sent to Argonne National Laboratory for performance testing and one remained with the Company. A manufacturing cost study was conducted to estimate limited mass production costs, explore cost reduction ideas and define tooling requirements. The final effort discussed shows the preliminary design for application of a 3X CPC solar collector system for use in the Iowa State Capitol complex.

  5. Autoimmune Manifestations in the 3xTg-AD Model of Alzheimer's Disease

    PubMed Central

    Marchese, Monica; Cowan, David; Head, Elizabeth; Ma, Donglai; Karimi, Khalil; Ashthorpe, Vanessa; Kapadia, Minesh; Zhao, Hui; Davis, Paulina; Sakic, Boris

    2015-01-01

    Background Immune system activation is frequently reported in patients with Alzheimer's disease (AD). However, it remains unknown whether this is a cause, a consequence, or an epiphenomenon of brain degeneration. Objective The present study examines whether immunological abnormalities occur in a well-established murine AD model and if so, how they relate temporally to behavioral deficits and neuropathology. Methods A broad battery of tests was employed to assess behavioral performance and autoimmune/inflammatory markers in 3xTg-AD (AD) mice and wild type controls from 1.5 to 12 months of age. Results Aged AD mice displayed severe manifestations of systemic autoimmune/inflammatory disease, as evidenced by splenomegaly, hepatomegaly, elevated serum levels of anti-nuclear/anti-dsDNA antibodies, low hematocrit, and increased number of double-negative T splenocytes. However, anxiety-related behavior and altered spleen function were evident as early as 2 months of age, thus preceding typical AD-like brain pathology. Moreover, AD mice showed altered olfaction and impaired “cognitive” flexibility in the first 6 months of life, suggesting mild cognitive impairment-like manifestations before general learning/memory impairments emerged at an older age. Interestingly, all of these features were present in 3xTg-AD mice prior to significant amyloid-β or tau pathology. Conclusion The results indicate that behavioral deficits in AD mice develop in parallel with systemic autoimmune/inflammatory disease. These changes antedate AD-like neuropathology, thus supporting a causal link between autoimmunity and aberrant behavior. Consequently, 3xTg-AD mice may be a useful model in elucidating the role of immune system in the etiology of AD. PMID:24150111

  6. Effect of cerium substitution on microstructure and Faraday rotation of Ce x Y3- x Fe5O12 thin films

    NASA Astrophysics Data System (ADS)

    Shahrokhvand, S. M.; Mozaffari, M.; Rozatian, A. S. H.; Hamidi, S. M.; Tehranchi, M. M.

    2016-01-01

    In this work, cerium-substituted yttrium iron garnet (Ce x Y3- x Fe5O12, x = 0.25-1) targets were fabricated by conventional ceramic method at different temperatures, and their crystal structures were investigated by X-ray diffraction method. The results showed that the minimum calcining temperature required to get single-phase targets depends on x value and decreased by increasing x value. Then, thin films of the targets were deposited on GGG (444) single-crystal substrates by pulsed laser deposition technique. Based on the previous studies, preferred (444) oriented Ce x Y3- x Fe5O12 thin films were fabricated under optimum conditions. Faraday rotation of the thin films was measured at 635 nm wavelength, and the results showed that Faraday rotation and sensitivity constant increased by increasing x value. Scanning electron microscope images showed that by increasing x value, cracks on the thin films' surface increased. Atomic force microscopy images showed that the films have smooth surfaces and the surface roughness decreased by increasing the x value.

  7. High-throughput characterization of Bi xY 3- xFe 5O 12 combinatorial thin films by magneto-optical imaging technique

    NASA Astrophysics Data System (ADS)

    Zhao, X. R.; Lu, W.-Q.; Okazaki, S.; Konishi, Y.; Akahane, K.; Ishibashi, T.; Sato, K.; Matsumoto, Y.; Koinuma, H.; Hasegawa, T.

    2006-01-01

    Bi xY 3- xFe 5O 12 thin films have been grown on GGG (Gd 3Ga 5O 12) (1 1 1) substrates by the combinatorial composition-spread techniques under substrate temperature ( Tsub) ranging from 410 to 700 °C and O 2 pressure of 200 mTorr. In order to study the effect of substrates on the deposition of Bi xY 3- xFe 5O 12 thin films, garnet substrates annealed at 1300 °C for 3 h were also used. Magneto-optical properties were characterized by our home-designed magneto-optical imaging system. From the maps of Faraday rotation angle θF, it was evident that the Faraday effect appears only when Tsub = 430-630 °C. θF reaches to the maximum value (˜6°/μm, λ = 632 nm) at 500 °C, and is proportional to the Bi contents. XRD and EPMA analyses showed that Bi ions are easier to substitute for Y sites and better crystallinity is obtained for annealed substrates than for commercial ones.

  8. Narrow-band tunable terahertz emission from ferrimagnetic Mn3-xGa thin films

    NASA Astrophysics Data System (ADS)

    Awari, N.; Kovalev, S.; Fowley, C.; Rode, K.; Gallardo, R. A.; Lau, Y.-C.; Betto, D.; Thiyagarajah, N.; Green, B.; Yildirim, O.; Lindner, J.; Fassbender, J.; Coey, J. M. D.; Deac, A. M.; Gensch, M.

    2016-07-01

    Narrow-band terahertz emission from coherently excited spin precession in metallic ferrimagnetic Mn3-xGa Heusler alloy nanofilms has been observed. The efficiency of the emission, per nanometer film thickness, is comparable or higher than that of classical laser-driven terahertz sources based on optical rectification. The center frequency of the emission from the films can be tuned precisely via the film composition in the range of 0.20-0.35 THz, making this type of metallic film a candidate for efficient on-chip terahertz emitters. Terahertz emission spectroscopy is furthermore shown to be a sensitive probe of magnetic properties of ultra-thin films.

  9. Thermodynamical study of boron doped CeX3 (X=Pd, Rh)

    NASA Astrophysics Data System (ADS)

    Sharma, Ramesh; Dwivedi, Shalini; Sharma, Yamini

    2016-05-01

    The structural, electronic, thermal, and optical properties of cubic non magnetic CeX3(X=Pd, Rh) compounds which crystallize in the Au3Cu structure have been studied using the projected augmented wave (PAW) method within the density functional theory (DFT) with generalized gradient approximation (GGA) for exchange correlation potential. In this paper we have calculated the band structure which are interpreted using the density of states. The optical properties such as extinction coefficients clearly illustrate the changes in CeX3 due to intercalation of boron. Lattice instability is observed in CePd3B from the calculated dynamical properties.

  10. Design and construction of a short-wave infrared 3.3X continuous zoom lens

    NASA Astrophysics Data System (ADS)

    Olson, Craig; Goodman, Tim; Addiego, Chris; Mifsud, Steve

    2010-08-01

    We present the definition, design, and construction of a 3.3X continuous-zoom short-wave infrared (SWIR) telephoto lens. Compared to visible and mid-wave infrared lenses, defining the appropriate lens requirements of short-wave lenses have some different trade-offs in terms of balancing radiometry and optimum focal plane sampling. In addition, the design process of optimizing a visible zoom design form of given first-order properties to work in the SWIR band reveals some challenges in glass selection and subsequent aberration balancing. A comparison of the actual measured MTF performance of a prototype lens shows reasonable performance compared to the design.

  11. Spin chain from marginally deformed AdS{sub 3}xS{sup 3}

    SciTech Connect

    Wen, W.-Y.

    2007-03-15

    We derive a spin chain Hamiltonian from a fast spinning string in the marginally deformed AdS{sub 3}xS{sup 3}. This corresponds to a closed trajectory swept out by the SU(2) or SL(2) spin vector on the surface of one-parameter deformed two-sphere or hyperboloid in the background of an anisotropic magnetic field interaction. In the limit of small deformation, a class of general Landau-Lifshitz equation with a nontrivial anisotropic matrix can be derived.

  12. Sub-180 nm generation with borate crystal

    NASA Astrophysics Data System (ADS)

    Qu, Chen; Yoshimura, Masashi; Tsunoda, Jun; Kaneda, Yushi; Imade, Mamoru; Sasaki, Takatomo; Mori, Yusuke

    2014-10-01

    We demonstrated a new scheme for the generation of 179 nm vacuum-ultraviolet (VUV) light with an all-solid-state laser system. It was achieved by mixing the deep-ultraviolet (DUV) of 198.8 nm and the infrared (IR) of 1799.9 nm. While CsB3O5 (CBO) did not satisfy the phase-matching at around 180 nm, 179 nm output was generated with LiB3O5 (LBO) for the first time. The phase-matching property of LBO at around 180 nm was also investigated. There was small deviation from theoretical curve in the measurement, which is still considered reasonable.

  13. Defining nodes in complex brain networks

    PubMed Central

    Stanley, Matthew L.; Moussa, Malaak N.; Paolini, Brielle M.; Lyday, Robert G.; Burdette, Jonathan H.; Laurienti, Paul J.

    2013-01-01

    Network science holds great promise for expanding our understanding of the human brain in health, disease, development, and aging. Network analyses are quickly becoming the method of choice for analyzing functional MRI data. However, many technical issues have yet to be confronted in order to optimize results. One particular issue that remains controversial in functional brain network analyses is the definition of a network node. In functional brain networks a node represents some predefined collection of brain tissue, and an edge measures the functional connectivity between pairs of nodes. The characteristics of a node, chosen by the researcher, vary considerably in the literature. This manuscript reviews the current state of the art based on published manuscripts and highlights the strengths and weaknesses of three main methods for defining nodes. Voxel-wise networks are constructed by assigning a node to each, equally sized brain area (voxel). The fMRI time-series recorded from each voxel is then used to create the functional network. Anatomical methods utilize atlases to define the nodes based on brain structure. The fMRI time-series from all voxels within the anatomical area are averaged and subsequently used to generate the network. Functional activation methods rely on data from traditional fMRI activation studies, often from databases, to identify network nodes. Such methods identify the peaks or centers of mass from activation maps to determine the location of the nodes. Small (~10–20 millimeter diameter) spheres located at the coordinates of the activation foci are then applied to the data being used in the network analysis. The fMRI time-series from all voxels in the sphere are then averaged, and the resultant time series is used to generate the network. We attempt to clarify the discussion and move the study of complex brain networks forward. While the “correct” method to be used remains an open, possibly unsolvable question that deserves

  14. Sentinel lymph node biopsy in breast cancer

    PubMed Central

    Alsaif, Abdulaziz A.

    2015-01-01

    Objectives: To report our experience in sentinel lymph node biopsy (SLNB) in early breast cancer. Methods: This is a retrospective study conducted at King Khalid University Hospital, Riyadh, Kingdom of Saudi Arabia between January 2005 and December 2014. There were 120 patients who underwent SLNB with frozen section examination. Data collected included the characteristics of patients, index tumor, and sentinel node (SN), SLNB results, axillary recurrence rate and SLNB morbidity. Results: There were 120 patients who had 123 cancers. Sentinel node was identified in 117 patients having 120 tumors (97.6% success rate). No SN was found intraoperatively in 3 patients. Frozen section results showed that 95 patients were SN negative, those patients had no immediate axillary lymph node dissection (ALND), whereas 25 patients were SN positive and subsequently had immediate ALND. Upon further examination of the 95 negative SN’s by hematoxylin & eosin (H&E) and immunohistochemical staining for doubtful H&E cases, 10 turned out to have micrometastases (6 had delayed ALND and 4 had no further axillary surgery). Median follow up of patients was 35.5 months and the mean was 38.8 months. There was one axillary recurrence observed in the SN negative group. The morbidity of SLNB was minimal. Conclusion: The obtainable results from our local experience in SLNB in breast cancer, concur with that seen in published similar literature in particular the axillary failure rate. Sentinel lymph node biopsy resulted in minimal morbidity. PMID:26318461

  15. Node Survival in Networks under Correlated Attacks

    PubMed Central

    Hao, Yan; Armbruster, Dieter; Hütt, Marc-Thorsten

    2015-01-01

    We study the interplay between correlations, dynamics, and networks for repeated attacks on a socio-economic network. As a model system we consider an insurance scheme against disasters that randomly hit nodes, where a node in need receives support from its network neighbors. The model is motivated by gift giving among the Maasai called Osotua. Survival of nodes under different disaster scenarios (uncorrelated, spatially, temporally and spatio-temporally correlated) and for different network architectures are studied with agent-based numerical simulations. We find that the survival rate of a node depends dramatically on the type of correlation of the disasters: Spatially and spatio-temporally correlated disasters increase the survival rate; purely temporally correlated disasters decrease it. The type of correlation also leads to strong inequality among the surviving nodes. We introduce the concept of disaster masking to explain some of the results of our simulations. We also analyze the subsets of the networks that were activated to provide support after fifty years of random disasters. They show qualitative differences for the different disaster scenarios measured by path length, degree, clustering coefficient, and number of cycles. PMID:25932635

  16. Node Survival in Networks under Correlated Attacks.

    PubMed

    Hao, Yan; Armbruster, Dieter; Hütt, Marc-Thorsten

    2015-01-01

    We study the interplay between correlations, dynamics, and networks for repeated attacks on a socio-economic network. As a model system we consider an insurance scheme against disasters that randomly hit nodes, where a node in need receives support from its network neighbors. The model is motivated by gift giving among the Maasai called Osotua. Survival of nodes under different disaster scenarios (uncorrelated, spatially, temporally and spatio-temporally correlated) and for different network architectures are studied with agent-based numerical simulations. We find that the survival rate of a node depends dramatically on the type of correlation of the disasters: Spatially and spatio-temporally correlated disasters increase the survival rate; purely temporally correlated disasters decrease it. The type of correlation also leads to strong inequality among the surviving nodes. We introduce the concept of disaster masking to explain some of the results of our simulations. We also analyze the subsets of the networks that were activated to provide support after fifty years of random disasters. They show qualitative differences for the different disaster scenarios measured by path length, degree, clustering coefficient, and number of cycles. PMID:25932635

  17. Weyl Nodes in Trigonal Tellurium and Selenium

    NASA Astrophysics Data System (ADS)

    Hirayama, Motoaki; Okugawa, Ryo; Ishibashi, Shoji; Murakami, Shuichi; Miyake, Takashi

    2015-03-01

    Singular points in the momentum space (Dirac nodes) have been under intensive investigation recently. Among various Dirac systems, materials having three-dimensional Dirac nodes without spin degeneracy (Weyl nodes) are of particular interest because of their topological nature. We study trigonal Te and Se as systems having both strong spin-orbit interaction (SOI) and broken inversion symmetry, which is necessary for the Weyl node. We calculate the electronic structure by using QMAS based on relativistic density functional theory, and add the self-energy correction in the GW approximation. Te and Se are insulating at ambient pressure. The conduction bands have a spin splitting similar to the Rashba splitting around the H points, but unlike the Rashba splitting the spin directions are radial, forming a hedgehog spin texture. The energy gap decreases with increasing pressure. In the metallic phase, the spin rotates twice around H on the kz = +/- π/c plane, which can be explained by the motion of the Weyl nodes under pressure. We also find that trigonal Te shows the Weyl semimetal phase with time-reversal symmetry under pressure.

  18. Thermochemical Properties and Bond Dissociation Energies for Fluorinated Methanol, CH3-xFxOH, and Fluorinated Methyl Hydroperoxides, CH3-xFxOOH: Group Additivity.

    PubMed

    Wang, Heng; Bozzelli, Joseph W

    2016-09-01

    Oxygenated fluorocarbons are routinely found in sampling of environmental soils and waters as a result of the widespread use of fluoro and chlorofluoro carbons as heat transfer fluids, inert materials, polymers, fire retardants and solvents; the influence of these chemicals on the environment is a growing concern. The thermochemical properties of these species are needed for understanding their stability and reactions in the environment and in thermal process. Structures and thermochemical properties on the mono- to trifluoromethanol, CH3-xFxOH, and fluoromethyl hydroperoxide, CH3-xFxOOH (1 ≤ x ≤ 3), are determined by CBS-QB3, CBS-APNO, and G4 calculations. Entropy, S°298, and heat capacities, Cp(T)'s (300 ≤ T/K ≤ 1500) from vibration, translation, and external rotation contributions are calculated on the basis of the vibration frequencies and structures obtained from the B3LYP/6-31+G(d,p) density functional method. Potential barriers for the internal rotations are also calculated from this method and used to calculate hindered rotor contributions to S°298 and Cp(T)'s using direct integration over energy levels of the internal rotational potentials. Standard enthalpies of formation, ΔfH°298 (units in kcal mol(-1)) are CH2FOOH (-83.7), CHF2OOH (-138.1), CF3OOH (-193.6), CH2FOO(•) (-44.9), CHF2OO(•) (-99.6), CF3OO(•) (-153.8), CH2FOH (-101.9), CHF2OH (-161.6), CF3OH (-218.1), CH2FO(•) (-49.1), CHF2O(•) (-97.8), CF3O(•) (-150.5), CH2F(•) (-7.6), CHF2(•) (-58.8), and CF3(•) (-112.6). Bond dissociation energies for the R-OOH, RO-OH, ROO-H, R-OO(•), RO-O(•), R-OH, RO-H, R-O(•), and R-H bonds are determined and compared with methyl hydroperoxide to observe the trends from added fluoro substitutions. Enthalpy of formation for the fluoro-hydrocarbon oxygen groups C/F/H2/O, C/F2/H/O, C/F3/O, are derived from the above fluorinated methanol and fluorinated hydroperoxide species for use in Benson's Group Additivity. It was determined that

  19. 147-nm photolysis of disilane

    SciTech Connect

    Perkins, G.G.A.; Lampe, F.W.

    1980-05-21

    The photodecomposition of Si/sub 2/H/sub 6/ at 147 nm results in the formation of H/sub 2/, SiH/sub 4/, Si/sub 3/H/sub 8/, Si/sub 4/H/sub 10/, Si/sub 5/H/sub 12/, and a solid film of amorphous silicon hydride (a-Si:H). Three primary processes are proposed to account for the results, namely, (a) Si/sub 2/H/sub 6/ + h..nu.. ..-->.. SiH/sub 2/ + SiH/sub 3/ + H (phi/sub a/ = 0.61); (b) Si/sub 2/H/sub 6/ + h..nu.. ..-->.. SiH/sub 3/SiH + 2H (phi/sub b/ = 0.18); (c) Si/sub 2/H/sub 6/ + h..nu.. ..-->.. Si/sub 2/H/sub 5/ + H (phi/sub c/ = 0.21). The overall quantum yields depend on the pressure but at 1 Torr partial pressure of Si/sub 2/H/sub 6/ are PHI(-Si/sub 2/H/sub 6/) = 4.3 +- 0.2, PHI(SiH/sub 4/) = 1.2 +- 0.4, PHI(Si/sub 3/H/sub 8/) = 0.91 +- 0.08, PHI(Si/sub 4/H/sub 10/) = 0.62 +- 0.03, PHI(Si,wall) = 2.2. Quantum yields for H/sub 2/ formation were not measured. A mechanism is proposed which is shown to be in accord with the experimental facts.

  20. "XA6" octahedra influencing the arrangement of anionic groups and optical properties in inverse-perovskite [B6O10]XA3 (X = Cl, Br; A = alkali metal).

    PubMed

    Yang, Zhihua; Lei, Bing-Hua; Yang, Bin; Pan, Shilie

    2016-06-01

    Exploring the effect of microscopic units, which set up the perovsikte framework, is of importance for material design. In this study, a series of borate halides with inverse-perovskite structures [B6O10]XA3 (X = Cl, Br; A = alkali metal) have been studied. It was revealed that the distortion and volume of XA6 octahedra influence the arrangement of anionic groups, which leads to the flexibility of the perovskite-related framework and differences in optical properties. Under the structural control scheme, the structure of Rb3B6O10Cl was predicted. The stability of the predicted structure was confirmed by an ab initio density functional theory-based method. The calculation shows Rb3B6O10Cl has a short UV cutoff edge of less than 200 nm, a moderate birefringence and a large second harmonic generation response. PMID:27211304

  1. Transport Properties Of Fe3-xTixO4 (x = 0.0 and 0.0206) Epitaxial Thin Films

    NASA Astrophysics Data System (ADS)

    Varshney, Dinesh; Yogi, Arvind; Verma, K.; Phase, D. M.

    2011-07-01

    Fe3-xTixO4 (x = 0 and 0.0206) epitaxial thin films with thickness of 150 nm were prepared by pulsed-laser deposition technique on SrTiO3 (100), α-Al2O3 (0001), Si (111) and Float Glass substrates. X-ray diffraction (XRD) pattern infers that parent and Ti doped magnetites are grown in single phase with (111) orientation. The Verwey transition temperature for Fe3O4 thin films are 121 K (Float Glass), 123 K (SrTiO3), 123.5 K (α-Al2O3) and 128 K (Si). It is shown that the Ti doping at B site results in the disappearance of Verwey transition in {Tix4+Fe1-x3+Fe2+}O42-.

  2. Portable widefield imaging device for ICG-detection of the sentinel lymph node

    NASA Astrophysics Data System (ADS)

    Govone, Angelo Biasi; Gómez-García, Pablo Aurelio; Carvalho, André Lopes; Capuzzo, Renato de Castro; Magalhães, Daniel Varela; Kurachi, Cristina

    2015-06-01

    Metastasis is one of the major cancer complications, since the malignant cells detach from the primary tumor and reaches other organs or tissues. The sentinel lymph node (SLN) is the first lymphatic structure to be affected by the malignant cells, but its location is still a great challenge for the medical team. This occurs due to the fact that the lymph nodes are located between the muscle fibers, making it visualization difficult. Seeking to aid the surgeon in the detection of the SLN, the present study aims to develop a widefield fluorescence imaging device using the indocyanine green as fluorescence marker. The system is basically composed of a 780nm illumination unit, optical components for 810nm fluorescence detection, two CCD cameras, a laptop, and dedicated software. The illumination unit has 16 diode lasers. A dichroic mirror and bandpass filters select and deliver the excitation light to the interrogated tissue, and select and deliver the fluorescence light to the camera. One camera is responsible for the acquisition of visible light and the other one for the acquisition of the ICG fluorescence. The software developed at the LabVIEW® platform generates a real time merged image where it is possible to observe the fluorescence spots, related to the lymph nodes, superimposed at the image under white light. The system was tested in a mice model, and a first patient with tongue cancer was imaged. Both results showed the potential use of the presented fluorescence imaging system assembled for sentinel lymph node detection.

  3. In vivo carbon nanotube-enhanced non-invasive photoacoustic mapping of the sentinel lymph node

    NASA Astrophysics Data System (ADS)

    Pramanik, Manojit; Song, Kwang Hyun; Swierczewska, Magdalena; Green, Danielle; Sitharaman, Balaji; Wang, Lihong V.

    2009-06-01

    Sentinel lymph node biopsy (SLNB), a less invasive alternative to axillary lymph node dissection (ALND), has become the standard of care for patients with clinically node-negative breast cancer. In SLNB, lymphatic mapping with radio-labeled sulfur colloid and/or blue dye helps identify the sentinel lymph node (SLN), which is most likely to contain metastatic breast cancer. Even though SLNB, using both methylene blue and radioactive tracers, has a high identification rate, it still relies on an invasive surgical procedure, with associated morbidity. In this study, we have demonstrated a non-invasive single-walled carbon nanotube (SWNT)-enhanced photoacoustic (PA) identification of SLN in a rat model. We have successfully imaged the SLN in vivo by PA imaging (793 nm laser source, 5 MHz ultrasonic detector) with high contrast-to-noise ratio (=89) and good resolution (~500 µm). The SWNTs also show a wideband optical absorption, generating PA signals over an excitation wavelength range of 740-820 nm. Thus, by varying the incident light wavelength to the near infrared region, where biological tissues (hemoglobin, tissue pigments, lipids and water) show low light absorption, the imaging depth is maximized. In the future, functionalization of the SWNTs with targeting groups should allow the molecular imaging of breast cancer.

  4. Effect of intratracheal instillation of ultrafine carbon black on proinflammatory cytokine and chemokine release and mRNA expression in lung and lymph nodes of mice.

    PubMed

    Shwe, Tin-Tin-Win; Yamamoto, Shoji; Kakeyama, Masaki; Kobayashi, Takahiro; Fujimaki, Hidekazu

    2005-11-15

    Our understanding of how ultrafine particles, which are constituents of particulate matter, affect immunological response is poor. To investigate the size-specific effect of ultrafine particles on pulmonary immune responses, translocation to lymph nodes, and chemokine mRNA expressions in lung and lymph nodes, we performed three experiments in 8-week-old male BALB/c mice. In experiment 1, we instilled 25 microg, 125 microg, or 625 microg of 14 nm carbon black (CB) particles intratracheally, once weekly for 4 weeks, and in experiment 2, we instilled 95 nm CB. For detection of total and differential cell counts and cytokine and chemokine protein release, we collected bronchoalveolar lavage (BAL) fluid 24 h after the last instillation of CB. Experiments 1 and 2 showed that 125 microg was the suitable dose for experiment 3, which we then performed on the same schedule and 4 h after the last instillation, we harvested the lung and mediastinal lymph node to detect chemokine mRNA expression by real-time RT-PCR. The total cell count as well as the differential cell counts such as macrophages, lymphocytes, and neutrophils in BAL fluid increased significantly in mice exposed to 14 nm CB in a dose-dependent manner. Release of cytokines such as interleukin (IL)-1beta, IL-6, and tumor necrosis factor-alpha increased significantly in BAL fluid in mice instilled with 14-nm CB. Macrophage inflammatory protein 1 alpha/CCL-3 protein and mRNA expression were increased significantly in the lungs and lymph nodes of mice given 14 nm CB. Histologically, deposition of CB was observed greater in the mediastinal lymph nodes of mice given 14 nm than in 95 nm CB. These findings indicate that repeated intratracheal instillation of ultrafine carbon black in mice leads to pulmonary inflammation, their translocation to mediastinal lymph nodes and increased chemokine mRNA expression in lung and lymph nodes size-specifically. PMID:16331831

  5. Heterogeneous activation of Oxone by Co(x)Fe(3-x)O4 nanocatalysts for degradation of rhodamine B.

    PubMed

    Su, Shengnan; Guo, Weilin; Leng, Yanqiu; Yi, Chunliang; Ma, Zhenmin

    2013-01-15

    The removal of Rhodamine B (RhB) by Co(x)Fe(3-x)O(4) magnetic nanoparticles activated Oxone has been performed in this study. A series of Co(x)Fe(3-x)O(4) nanoparticles was synthesized using a hydrothermal method. The synthetic Co(x)Fe(3-x)O(4) nanoparticles were characterized using X-ray diffraction (XRD) and transmission electron microscopy (TEM). The results showed that they were spinel structures and Co was introduced into their structures. The performances of Co(x)Fe(3-x)O(4) nanocatalysts on the activation of Oxone for removal of RhB were investigated and we found that the higher cobalt content in the catalyst, the better removal performance was resulted. A series experiments of reaction conditions were also performed, which confirmed that weak acidic, higher temperature, higher dosages of Co(x)Fe(3-x)O(4) nanocatalyst and Oxone and lower concentration of RhB were favored for the degradation of RhB. The pseudo-first order kinetics was observed to fit the Co(x)Fe(3-x)O(4)/Oxone process. Furthermore, the reaction mechanism was discussed and the scavenging effect was examined by using phenol and tert-butyl alcohol which indicated that sulfate radicals were the dominating reactive species responsible for the degradation process. Finally, the stability of Co(x)Fe(3-x)O(4) nanocatalyst was studied. PMID:23195597

  6. Study on MoO{sub 3-x} films deposited by reactive sputtering for organic light-emitting diodes

    SciTech Connect

    Oka, Nobuto; Watanabe, Hiroki; Sato, Yasushi; Yamaguchi, Hiroshi; Ito, Norihiro; Tsuji, Hiroya; Shigesato, Yuzo

    2010-07-15

    The authors investigate the role of reduced molybdenum trioxide [MoO{sub 3-x} (x{<=}1)] films in organic light-emitting diodes, particularly from the viewpoint of the oxidation state of Mo. MoO{sub 3-x} films were deposited by reactive sputtering under a mixture of argon (Ar) and oxygen (O{sub 2}). The O{sub 2} gas-flow ratio (GFR) [O{sub 2}/(Ar+O{sub 2})] was adjusted between 10% and 100%. Mo with six, five, and four valence electrons was detected in MoO{sub 3-x} film deposited with an O{sub 2} GFR of 10% and 12.5%, whereas, under higher O{sub 2} GFRs, only six valence electrons for Mo in the MoO{sub 3-x} film were detected. N,N{sup '}-di(1-naphthyl)-N,N{sup '}-diphenylbenzidine ({alpha}-NPD) layer, hole-transport material, were deposited over the MoO{sub 3-x} layer by subsequent vacuum evaporation. At the {alpha}-NPD/MoO{sub 3-x} interface, it was found that {alpha}-NPD cations were generated and that MoO{sub 3-x} was reduced, which provided evidence of charge transfer across the interface by Raman spectroscopy and x-ray photoelectron spectroscopy.

  7. Layout dependent effects analysis on 28nm process

    NASA Astrophysics Data System (ADS)

    Li, Helen; Zhang, Mealie; Wong, Waisum; Song, Huiyuan; Xu, Wei; Hurat, Philippe; Ding, Hua; Zhang, Yifan; Cote, Michel; Huang, Jason; Lai, Ya-ch

    2015-03-01

    Advanced process nodes introduce new variability effects due to increased density, new material, new device structures, and so forth. This creates more and stronger Layout Dependent effects (LDE), especially below 28nm. These effects such as WPE (Well Proximity Effect), PSE (Poly Spacing Effect) change the carrier mobility and threshold voltage and therefore make the device performances, such as Vth and Idsat, extremely layout dependent. In traditional flows, the impact of these changes can only be simulated after the block has been fully laid out, the design is LVS and DRC clean. It's too late in the design cycle and it increases the number of post-layout iteration. We collaborated to develop a method on an advanced process to embed several LDE sources into a LDE kit. We integrated this LDE kit in custom analog design environment, for LDE analysis at early design stage. These features allow circuit and layout designers to detect the variations caused by LDE, and to fix the weak points caused by LDE. In this paper, we will present this method and how it accelerates design convergence of advanced node custom analog designs by detecting early-on LDE hotspots on partial or fully placed layout, reporting contribution of each LDE component to help identify the root cause of LDE variation, and even providing fixing guidelines on how to modify the layout and to reduce the LDE impact.

  8. Lipid-Calcium Phosphate Nanoparticles for Delivery to the Lymphatic System and SPECT/CT Imaging of Lymph Node Metastases

    PubMed Central

    Tseng, Yu-Cheng; Xu, Zhenghong; Guley, Kevin; Yuan, Hong; Huang, Leaf

    2014-01-01

    A lipid/calcium/phosphate (LCP) nanoparticle (NP) formulation (particle diameter ~25 nm) with superior siRNA delivery efficiency was developed and reported previously. Here, we describe the successful formulation of 111In into LCP for SPECT/CT imaging. Imaging and biodistribution studies showed that, polyethylene glycol grafted 111In-LCP preferentially accumulated in the lymph nodes at ~70% ID/g in both C57BL/6 and nude mice when the improved surface coating method was used. Both the liver and spleen accumulated only ~25% ID/g. Larger LCP (diameter ~67 nm) was less lymphotropic. These results indicate that 25 nm LCP was able to penetrate into tissues, enter the lymphatic system, and accumulate in the lymph nodes via lymphatic drainage due to 1) small size, 2) a well-PEGylated lipid surface, and 3) a slightly negative surface charge. The capability of intravenously injected 111In-LCP to visualize an enlarged, tumor-loaded sentinel lymph node was demonstrated using a 4T1 breast cancer lymph node metastasis model. Systemic gene delivery to the lymph nodes after IV injection was demonstrated by the expression of red fluorescent protein cDNA. The potential of using LCP for lymphatic drug delivery is discussed. PMID:24613050

  9. Communication: Fixed-node errors in quantum Monte Carlo: Interplay of electron density and node nonlinearities

    SciTech Connect

    Rasch, Kevin M.; Hu, Shuming; Mitas, Lubos

    2014-01-28

    We elucidate the origin of large differences (two-fold or more) in the fixed-node errors between the first- vs second-row systems for single-configuration trial wave functions in quantum Monte Carlo calculations. This significant difference in the valence fixed-node biases is studied across a set of atoms, molecules, and also Si, C solid crystals. We show that the key features which affect the fixed-node errors are the differences in electron density and the degree of node nonlinearity. The findings reveal how the accuracy of the quantum Monte Carlo varies across a variety of systems, provide new perspectives on the origins of the fixed-node biases in calculations of molecular and condensed systems, and carry implications for pseudopotential constructions for heavy elements.

  10. Node degree distribution in spanning trees

    NASA Astrophysics Data System (ADS)

    Pozrikidis, C.

    2016-03-01

    A method is presented for computing the number of spanning trees involving one link or a specified group of links, and excluding another link or a specified group of links, in a network described by a simple graph in terms of derivatives of the spanning-tree generating function defined with respect to the eigenvalues of the Kirchhoff (weighted Laplacian) matrix. The method is applied to deduce the node degree distribution in a complete or randomized set of spanning trees of an arbitrary network. An important feature of the proposed method is that the explicit construction of spanning trees is not required. It is shown that the node degree distribution in the spanning trees of the complete network is described by the binomial distribution. Numerical results are presented for the node degree distribution in square, triangular, and honeycomb lattices.

  11. New ultrasound techniques for lymph node evaluation

    PubMed Central

    Cui, Xin-Wu; Jenssen, Christian; Saftoiu, Adrian; Ignee, Andre; Dietrich, Christoph F

    2013-01-01

    Conventional ultrasound (US) is the recommended imaging method for lymph node (LN) diseases with the advantages of high resolution, real time evaluation and relative low costs. Current indications of transcutaneous ultrasound and endoscopic ultrasound include the detection and characterization of lymph nodes and the guidance for LN biopsy. Recent advances in US technology, such as contrast enhanced ultrasound (CEUS), contrast enhanced endoscopic ultrasound (CE-EUS), and real time elastography show potential to improve the accuracy of US for the differential diagnosis of benign and malignant lymph nodes. In addition, CEUS and CE-EUS have been also used for the guidance of fine needle aspiration and assessment of treatment response. Complementary to size criteria, CEUS could also be used to evaluate response of tumor angiogenesis to anti-angiogenic therapies. In this paper we review current literature regarding evaluation of lymphadenopathy by new and innovative US techniques. PMID:23946589

  12. Saddle-node bifurcation of viscous profiles.

    PubMed

    Achleitner, Franz; Szmolyan, Peter

    2012-10-15

    Traveling wave solutions of viscous conservation laws, that are associated to Lax shocks of the inviscid equation, have generically a transversal viscous profile. In the case of a non-transversal viscous profile we show by using Melnikov theory that a parametrized perturbation of the profile equation leads generically to a saddle-node bifurcation of these solutions. An example of this bifurcation in the context of magnetohydrodynamics is given. The spectral stability of the traveling waves generated in the saddle-node bifurcation is studied via an Evans function approach. It is shown that generically one real eigenvalue of the linearization of the viscous conservation law around the parametrized family of traveling waves changes its sign at the bifurcation point. Hence this bifurcation describes the basic mechanism of a stable traveling wave which becomes unstable in a saddle-node bifurcation. PMID:23576830

  13. Clock Agreement Among Parallel Supercomputer Nodes

    DOE Data Explorer

    Jones, Terry R.; Koenig, Gregory A.

    2014-04-30

    This dataset presents measurements that quantify the clock synchronization time-agreement characteristics among several high performance computers including the current world's most powerful machine for open science, the U.S. Department of Energy's Titan machine sited at Oak Ridge National Laboratory. These ultra-fast machines derive much of their computational capability from extreme node counts (over 18000 nodes in the case of the Titan machine). Time-agreement is commonly utilized by parallel programming applications and tools, distributed programming application and tools, and system software. Our time-agreement measurements detail the degree of time variance between nodes and how that variance changes over time. The dataset includes empirical measurements and the accompanying spreadsheets.

  14. SpicyNodes Radial Map Engine

    NASA Astrophysics Data System (ADS)

    Douma, M.; Ligierko, G.; Angelov, I.

    2008-10-01

    The need for information has increased exponentially over the past decades. The current systems for constructing, exploring, classifying, organizing, and searching information face the growing challenge of enabling their users to operate efficiently and intuitively in knowledge-heavy environments. This paper presents SpicyNodes, an advanced user interface for difficult interaction contexts. It is based on an underlying structure known as a radial map, which allows users to manipulate and interact in a natural manner with entities called nodes. This technology overcomes certain limitations of existing solutions and solves the problem of browsing complex sets of linked information. SpicyNodes is also an organic system that projects users into a living space, stimulating exploratory behavior and fostering creative thought. Our interactive radial layout is used for educational purposes and has the potential for numerous other applications.

  15. Predicting missing links via correlation between nodes

    NASA Astrophysics Data System (ADS)

    Liao, Hao; Zeng, An; Zhang, Yi-Cheng

    2015-10-01

    As a fundamental problem in many different fields, link prediction aims to estimate the likelihood of an existing link between two nodes based on the observed information. Since this problem is related to many applications ranging from uncovering missing data to predicting the evolution of networks, link prediction has been intensively investigated recently and many methods have been proposed so far. The essential challenge of link prediction is to estimate the similarity between nodes. Most of the existing methods are based on the common neighbor index and its variants. In this paper, we propose to calculate the similarity between nodes by the Pearson correlation coefficient. This method is found to be very effective when applied to calculate similarity based on high order paths. We finally fuse the correlation-based method with the resource allocation method, and find that the combined method can substantially outperform the existing methods, especially in sparse networks.

  16. Energy Options for Wireless Sensor Nodes

    PubMed Central

    Knight, Chris; Davidson, Joshua; Behrens, Sam

    2008-01-01

    Reduction in size and power consumption of consumer electronics has opened up many opportunities for low power wireless sensor networks. One of the major challenges is in supporting battery operated devices as the number of nodes in a network grows. The two main alternatives are to utilize higher energy density sources of stored energy, or to generate power at the node from local forms of energy. This paper reviews the state-of-the art technology in the field of both energy storage and energy harvesting for sensor nodes. The options discussed for energy storage include batteries, capacitors, fuel cells, heat engines and betavoltaic systems. The field of energy harvesting is discussed with reference to photovoltaics, temperature gradients, fluid flow, pressure variations and vibration harvesting.

  17. Space Station resource node flow field analysis

    NASA Technical Reports Server (NTRS)

    Kania, Lee; Kumar, Ganesh; Mcconnaughey, Paul

    1991-01-01

    An analysis of the flow field within the Space Station Freedom resource node with operational intermodule ventilation and temperature/humidity control ventilation systems has been conducted. The INS3D code, an incompressible, steady-state Navier-Stokes solver has been used to assess the design of the ventilation system via quantification of the level of fluid mixing and identification of 'dead air' regions and short-circuit ventilation. Numerical results indicate significant short-circuit ventilation in the forward and midsections of the node and insufficient fluid mixing is found to exist in the aft node section. These results as well as results from a solution grid dependence study are presented.

  18. Current concepts of anatomy and electrophysiology of the sinus node.

    PubMed

    Murphy, Cliona; Lazzara, Ralph

    2016-06-01

    The sinoatrial node, or sinus node, of humans is the principal pacemaker of the heart. Over the last century, studies have unraveled the complex molecular architecture of the sinus node and the expression of unique ion channels within its specialized myocytes. Aim of this review is to describe the embriology, the anatomy, the histology and the electrophisiology of the sinus node. PMID:27142063

  19. Structural and magnetic properties of ZnxMn3-xO4 spinels

    NASA Astrophysics Data System (ADS)

    Nádherný, Ladislav; Maryško, Miroslav; Sedmidubský, David; Martin, Christine

    2016-09-01

    To study structural and magnetic properties of spinels a series of ceramic samples with a different Zn:Mn ratio was prepared by high-temperature annealing in air followed by quenching in liquid nitrogen. The spinels with nominal composition of ZnxMn3-xO4 (x=0-1.29) were characterized by means of X-ray diffraction, Raman spectroscopy, scanning electron microscopy and SQUID magnetometry. Two tetragonal spinels of the same I41/amd space-group were identified based on the crystallographic, vibrational and grain-morphology point of view and described in detail. The unit-cell parameters and phase ratio of the spinel phases were determined using Rietveld refinement. According to the factor-group analysis the majority of the vibrational modes were identified in the Raman spectra. The magnetic properties of ZnxMn3-xO4 spinels are in agreement with a model of nanoscale ferrimagnetic Mn3O4 clusters in the antiferromagnetic ZnMn2O4 matrix (TN≈60 K). New features are a constricted hysteresis loop for x=0.3, and the effect of defects on magnetic properties for high Zn content which points to a good quality of the samples prepared by a solid state reaction.

  20. Phonon Density of States and Heat Capacity of La$_{3-x}$Te$_4$

    SciTech Connect

    Delaire, Olivier A; May, Andrew F.; McGuire, Michael A; Porter, Wallace D; Lucas,; Stone, Matthew B; Abernathy, Douglas L; Snyder, G. J.

    2009-01-01

    The phonon density of states (DOS) of La$_{3-x}$Te$_4$ compounds ($x=0.0, 0.18, 0.32$) was measured at 300, 520, and 780$\\,$K, using inelastic neutron scattering. A significant stiffening of the phonon DOS, and a large broadening of features were observed upon introduction of vacancies on La sites (increasing $x$). Heat capacity measurements were performed at temperatures $~1.85 \\leqslant T \\leqslant 1200 \\,$K, and were analyzed to quantify the contributions of phonons and electrons. The Debye temperature and the electronic coefficient of heat capacity determined from these measurements are consistent with the neutron scattering results, and with previously reported first-principles calculations. Our results indicate that La vacancies in La$_{3-x}$Te$_4$ strongly scatter phonons, and this source of scattering appears to be independent of temperature. The stiffening of the phonon DOS induced by the introduction of vacancies is explained in terms of the electronic structure and the change in bonding. The temperature dependence of the phonon DOS is captured satisfactorily by the quasiharmonic approximation.

  1. Phonons in the ternary phase ZrS 3-xSe x

    NASA Astrophysics Data System (ADS)

    Zwick, A.; Landa, G.; Carles, R.; Renucci, M. A.; Kjekshus, A.

    1983-03-01

    The mode behaviour of long wavelength optical phonons in the ternary phase ZrS 3-xSe x has been investigated by means of Raman spectroscopy through the whole composition range 0 ⩽ x ⩽ 3. A mixed one-, two- and three-mode behaviour is observed, depending respectively on modes of group I (quasi- rigid chain modes), II (internal deformation chain modes) and III (diatomic X-X [ X = S, Se] stretching mode). Three-mode behaviour of diatomic X-X mode is explained in terms of vibrations of S-S, Se-Se and S-Se pairs, practically insensitive to metal atoms as shown by comparison with the HfS 3-xSe x system. The analysis of integrated intensities of peaks assigned to vibrations of S-S, Se-Se and S-Se pairs on the basis of a statistical model concludes in favour of higher Raman efficiency of selenium pairs compared to sulfur pairs. On the other hand, one-mode behaviour of quasi-rigid chain modes establishes unambiguously a one-to-one mode correspondence between the two binary compounds, confirming thus our previous assignments. Spectral features of the ternary phase suggest contributions from the density of vibrational states due to relaxation of Raman selection rules resulting from configurational disorder.

  2. Native defects in tetradymite Bi2(TexSe3-x) topological insulators

    SciTech Connect

    Wang, Lin-Lin; Huang, Mianliang; Thimmaiah, Srinivasa; Alam, Aftab; Budko, Sergey L.; Kaminski, Adam; Lograsso, Thomas A.; Canfield, Paul; Johnson, Duane D.

    2013-03-08

    Formation energies of native defects in Bi2(TexSe3-x), with comparison to ideal Bi2Te2S, are calculated in density-functional theory to assess transport properties. Bi2Se3 is found to be n type for both Bi- and Se-rich growth conditions, while Bi2Te3 changes from n to p type going from Te- to Bi-rich conditions, as observed. Bi2Te2Se and Bi2Te2S are generally n type, explaining observed heavily doped n-type behavior in most samples. A (0/-) transition level at 16 meV above valence-band maximum for Bi on Te antisites in Bi2Te2Se is related to the observed thermally active transport gap causing a p-to-n transition at low temperature. Bi2(TexSe3-x) with x>2 are predicted to have high bulk resistivity due to effective carrier compensation when approaching the n-to-p crossover. Predicted behaviors are confirmed from characterization of our grown single crystals.

  3. Magneto-transport behaviour of Bi2Se3-x Te x : role of disorder

    NASA Astrophysics Data System (ADS)

    Amaladass, E. P.; Devidas, T. R.; Sharma, Shilpam; Sundar, C. S.; Mani, Awadhesh; Bharathi, A.

    2016-02-01

    Magneto-resistance and Hall resistance measurements have been carried out in fast-cooled single crystals of Bi2Se3-x Te x (x  =  0 to 2) in 4-300 K temperature range, under magnetic fields up to 15 T. The variation of resistivity with temperature that points to a metallic behaviour in Bi2Se3, shows an up-turn at low temperatures in the Te doped samples. Magneto-resistance measurements in Bi2Se3 show clear signatures of Shubnikov-de Hass (SdH) oscillations that gets suppressed in the Te doped samples. In the Bi2SeTe2 sample, the magneto-resistance shows a cusp like positive magneto-resistance at low magnetic fields and low temperatures, a feature associated with weak anti-localisation (WAL), that crosses over to negative magneto-resistance at higher fields. The qualitatively different magneto-transport behaviour seen in Bi2SeTe2 as compared to Bi2Se3 is rationalised in terms of the disorder, through an estimate of the carrier density, carrier mobility and an analysis in terms of the Ioffe-Regel criterion with support from Hall Effect measurements. We demonstrate that by introducing Te, in the strongly disordered samples a smooth crossover of SdH and WAL can be seen in the Bi2Se3-x Te x series, both of which provide signatures for the presence of topological surface states.

  4. Physical properties of Ce3-xTe4 below room temperature

    SciTech Connect

    May, Andrew F; McGuire, Michael A; Cantoni, Claudia; Sales, Brian C

    2012-01-01

    The physical properties of polycrystalline Ce{sub 3-x}Te{sub 4} were investigated by measurements of the thermoelectric properties, Hall coefficient, heat capacity, and magnetization. The fully filled, metallic x = 0 compound displays a soft ferromagnetic transition near 4 K, and analysis of the corresponding heat capacity anomaly suggests a doublet ground state for Ce{sup 3+}. The transition is suppressed to below 2 K in the insulating x = 0.33 composition, revealing that magnetic order in Ce{sub 3-x}Te{sub 4} is driven by a Ruderman-Kittel-Kasuya-Yosida (RKKY)-type interaction. The thermoelectric properties trend with composition as expected from simple electron counting, and the transport properties in Ce{sub 3}Te{sub 4} are observed to be similar to those in La{sub 3}Te{sub 4}. Trends in the low-temperature thermal conductivity data reveal that the phonons are efficiently scattered by electrons, while all compositions examined have a lattice thermal conductivity near 1.2 W/m K{sup -1} at 200 K.

  5. Alterations in synaptic plasticity coincide with deficits in spatial working memory in presymptomatic 3xTg-AD mice.

    PubMed

    Clark, Jason K; Furgerson, Matthew; Crystal, Jonathon D; Fechheimer, Marcus; Furukawa, Ruth; Wagner, John J

    2015-11-01

    Alzheimer's disease is a neurodegenerative condition believed to be initiated by production of amyloid-beta peptide, which leads to synaptic dysfunction and progressive memory loss. Using a mouse model of Alzheimer's disease (3xTg-AD), an 8-arm radial maze was employed to assess spatial working memory. Unexpectedly, the younger (3month old) 3xTg-AD mice were as impaired in the spatial working memory task as the older (8month old) 3xTg-AD mice when compared with age-matched NonTg control animals. Field potential recordings from the CA1 region of slices prepared from the ventral hippocampus were obtained to assess synaptic transmission and capability for synaptic plasticity. At 3months of age, the NMDA receptor-dependent component of LTP was reduced in 3xTg-AD mice. However, the magnitude of the non-NMDA receptor-dependent component of LTP was concomitantly increased, resulting in a similar amount of total LTP in 3xTg-AD and NonTg mice. At 8months of age, the NMDA receptor-dependent LTP was again reduced in 3xTg-AD mice, but now the non-NMDA receptor-dependent component was decreased as well, resulting in a significantly reduced total amount of LTP in 3xTg-AD compared with NonTg mice. Both 3 and 8month old 3xTg-AD mice exhibited reductions in paired-pulse facilitation and NMDA receptor-dependent LTP that coincided with the deficit in spatial working memory. The early presence of this cognitive impairment and the associated alterations in synaptic plasticity demonstrate that the onset of some behavioral and neurophysiological consequences can occur before the detectable presence of plaques and tangles in the 3xTg-AD mouse model of Alzheimer's disease. PMID:26385257

  6. Incidence of metastasis in circumflex iliac nodes distal to the external iliac nodes in cervical cancer

    PubMed Central

    Okamoto, Kazuhira; Kato, Hidenori

    2016-01-01

    Objective A causal relationship between removal of circumflex iliac nodes distal to the external iliac nodes (CINDEIN) and lower leg edema has been recently suggested. The aim of this study was to elucidate the incidence of CINDEIN metastasis in cervical cancer. Methods A retrospective chart review was carried out for 531 patients with cervical cancer who underwent lymph node dissection between 1993 and 2014. CINDEIN metastasis was pathologically identified by microscopic investigation. After 2007, sentinel lymph node biopsy was performed selectively in patients with non-bulky cervical cancer. The sentinel node was identified using 99mTc-phytate and by scanning the pelvic cavity with a γ probe. Results Two hundred and ninety-seven patients (55.9%) underwent CINDEIN dissection and 234 (44.1%) did not. The percentage of International Federation of Gynecology and Obstetrics stage IIb to IV (42.4% vs. 23.5%, p<0.001) was significantly higher in patients who underwent CINDEIN dissection than those who did not. CINDEIN metastasis was identified in 1.9% overall and in 3.4% of patients who underwent CINDEIN dissection. For patients with stage Ia to IIa disease, CINDEIN metastasis was identified in 0.6% overall and in 1.2% of patients who underwent CINDEIN dissection. Of 115 patients with sentinel node mapping, only one (0.9%) had CINDEIN detected as a sentinel node. In this case, the other three lymph nodes were concurrently detected as sentinel lymph nodes. Conclusion CINDEIN dissection can be eliminated in patients with stage Ia to IIa disease. CINDEIN might not be regional lymph nodes in cervical cancer. PMID:27102250

  7. Diagnosis of pelvic lymph node metastasis in prostate cancer using single optical fiber probe.

    PubMed

    Denkçeken, Tuba; Canpolat, Murat; Baykara, Mehmet; Başsorgun, İbrahim; Aktaş-Samur, Anıl

    2016-09-01

    Elastic light single-scattering spectroscopy system (ELSSS) is a biomedical tool which is used for detection of cancerous tissues ex-vivo. ELSSS spectra depend primarily on the size of scatterers in the tissue and are not directly related to changes in the absorption which are caused by variations of the biological macromolecules. In the present study, we aimed to detect metastasis in the pelvic lymph node by using combination of Principal Components Analysis (PCA) and Linear Discriminant Analysis (LDA). Single-scattering spectra in the 450-750nm wavelength regions were obtained from the total of 83 reactive lymph node and 12 metastatic lymph node samples from 10 prostatic cancer patients. The ELSSS spectral data were compared against the "gold standard" histopathology results. Data analyses were done via using PCA, followed by LDA. Receiver Operating Characteristic (ROC) curve analysis was employed for differentiating performance. The classification based on discriminant score provided sensitivity of 100% and specificity of 96.4%, in differentiating non-metastatic (reactive) from metastatic pelvic lymph nodes, with a Positive Predictive Value (PPV) of 0.8, a Negative Predictive Value (NPV) of 0.99 and the area under the ROC curve (AUC) of 0.99, respectively. In this study, it was shown that ELSSS system can accurately distinguish reactive and metastatic pelvic lymph nodes of prostate cancer with high PPV and NPV. It can be concluded that diagnostic accuracy of ELSSS system allows detecting metastatic tissues during operation. PMID:26526175

  8. 32 nm logic patterning options with immersion lithography

    NASA Astrophysics Data System (ADS)

    Lai, K.; Burns, S.; Halle, S.; Zhuang, L.; Colburn, M.; Allen, S.; Babcock, C.; Baum, Z.; Burkhardt, M.; Dai, V.; Dunn, D.; Geiss, E.; Haffner, H.; Han, G.; Lawson, P.; Mansfield, S.; Meiring, J.; Morgenfeld, B.; Tabery, C.; Zou, Y.; Sarma, C.; Tsou, L.; Yan, W.; Zhuang, H.; Gil, D.; Medeiros, D.

    2008-03-01

    The semiconductor industry faces a lithographic scaling limit as the industry completes the transition to 1.35 NA immersion lithography. Both high-index immersion lithography and EUV lithography are facing technical challenges and commercial timing issues. Consequently, the industry has focused on enabling double patterning technology (DPT) as a means to circumvent the limitations of Rayleigh scaling. Here, the IBM development alliance demonstrate a series of double patterning solutions that enable scaling of logic constructs by decoupling the pattern spatially through mask design or temporally through innovative processes. These techniques have been successfully employed for early 32nm node development using 45nm generation tooling. Four different double patterning techniques were implemented. The first process illustrates local RET optimization through the use of a split reticle design. In this approach, a layout is decomposed into a series of regions with similar imaging properties and the illumination conditions for each are independently optimized. These regions are then printed separately into the same resist film in a multiple exposure process. The result is a singly developed pattern that could not be printed with a single illumination-mask combination. The second approach addresses 2D imaging with particular focus on both line-end dimension and linewidth control [1]. A double exposure-double etch (DE2) approach is used in conjunction with a pitch-filling sacrificial feature strategy. The third double exposure process, optimized for via patterns also utilizes DE2. In this method, a design is split between two separate masks such that the minimum pitch between any two vias is larger than the minimum metal pitch. This allows for final structures with vias at pitches beyond the capability of a single exposure. In the fourth method,, dark field double dipole lithography (DDL) has been successfully applied to BEOL metal structures and has been shown to be

  9. In depth characterization of electron transport in 14 nm FD-SOI CMOS devices

    NASA Astrophysics Data System (ADS)

    Shin, Minju; Shi, Ming; Mouis, Mireille; Cros, Antoine; Josse, Emmanuel; Kim, Gyu-Tae; Ghibaudo, Gérard

    2015-10-01

    In this paper, carrier transport properties in highly scaled (down to 14 nm-node) FDSOI CMOS devices are presented from 77 K to 300 K. At first, we analyzed electron transport characteristics in terms of different gate-oxide stack in NMOS long devices. So, we found that SOP and RCS can be the dominant contribution of additional mobility scatterings in different temperature regions. Then, electron mobility degradation in short channel devices was deeply investigated. It can be stemmed from additional scattering mechanisms, which were attributed to process-induced defects near source and drain. Finally, we found that mobility enhancement by replacing Si to SiGe channel in PMOS devices was validated and this feature was not effective anymore in sub-100 nm devices. The critical lengths were around 50 nm and 100 nm for NMOS and PMOS devices, respectively.

  10. Stochastic effects in 11 nm imaging of extreme ultraviolet lithography with chemically amplified resists

    NASA Astrophysics Data System (ADS)

    Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

    2014-03-01

    The resolution of extreme ultraviolet (EUV) lithography with chemically amplified resist processes has reached 16 nm (half-pitch). The development of chemically amplified resists is ongoing toward the 11 nm node. However, the stochastic effects are increasingly becoming a significant concern with the continuing shrinkage of features. In this study, the fluctuation of protected unit distribution caused by the stochastic effects during image formation was investigated assuming line-and-space patterns with 11 nm half-pitch. Contrary to expectations, the standard deviation of the number of protected units connected to a polymer after postexposure baking (PEB) did not differ from that for 16 nm half-pitch. The standard deviation after PEB increased with the effective reaction radius for deprotection and the initial standard deviation before PEB. Because of the severe requirements for resist processes, the stochastic effects in chemical reactions should be taken into account in the design of next-generation resists.

  11. Electronic structures and optical properties of α-Fe2O3-xSex alloys for solar absorber

    NASA Astrophysics Data System (ADS)

    Xia, Congxin; Jia, Yu; Zhang, Qiming

    2015-05-01

    The band structures and optical properties of α-Fe2O3-xSex alloys are studied by means of first-principles methods, considering different Se contents x. Numerical results show that Se content has an obvious influence on band structures and optical properties of α-Fe2O3-xSex alloys. The band gap values of α-Fe2O3-xSex alloys decrease monotonically when Se concentrations increase, resulting in an obvious increase of the optical absorption edge in the visible range. In particular, our results show that α-Fe2O3-xSex alloys have the direct band gap properties with band gap values when Se content x ≈ 0.17, which is beneficial to solar cell applications.

  12. Effect of cation substitution on the magnetic and magnetotransport properties of epitaxial Fe3-xVxO4 films

    NASA Astrophysics Data System (ADS)

    Jin, Chao; Liu, Jie; Zheng, Dongxing; Tang, Min; Li, Peng; Bai, Haili

    2015-03-01

    The effect of cation on the structure, magnetic and magnetotransport properties of epitaxial Fe3-xVxO4 (0 ≤ x ≤ 0.6) films fabricated by reactive cosputtering was investigated systematically. Four kinds of cations (Fe2+, Fe3+, V2+ and V3+) exist in the Fe3-xVxO4 films. The Fe3-xVxO4 films reveal semiconducting property and increased resistivity with increasing V content. The systematic change of the decreased saturation magnetization and enhanced exchange bias is closely related to the spin canting and antiferromagnetic coupling, which is caused by the V substitution on B sites. The presents of V2+ (3d3) enlarge the anisotropy, and further increase the coercivity. With the combined effects of the larger anisotropy, spin canting and enhanced antiferromagnetic coupling caused by V substitution, the Fe3-xVxO4 films exhibit enhanced four-fold symmetric anisotropic magnetoresistance.

  13. International Lunar Network (ILN) Anchor Nodes

    NASA Technical Reports Server (NTRS)

    Cohen, Barbara A.

    2009-01-01

    This slide presentation reviews the United States' contribution to the International Lunar Network (ILN) project, the Anchor Nodes project. The ILN is an initiative of 9 national space agencies to establish a set of robotic geophysical monitoring stations on the surface of the Moon. The project is aimed at furthering the understanding of the lunar composition, and interior structure.

  14. Isolation of Murine Lymph Node Stromal Cells

    PubMed Central

    Lagarde, Nadège; Rossi, Simona W.

    2014-01-01

    Secondary lymphoid organs including lymph nodes are composed of stromal cells that provide a structural environment for homeostasis, activation and differentiation of lymphocytes. Various stromal cell subsets have been identified by the expression of the adhesion molecule CD31 and glycoprotein podoplanin (gp38), T zone reticular cells or fibroblastic reticular cells, lymphatic endothelial cells, blood endothelial cells and FRC-like pericytes within the double negative cell population. For all populations different functions are described including, separation and lining of different compartments, attraction of and interaction with different cell types, filtration of the draining fluidics and contraction of the lymphatic vessels. In the last years, different groups have described an additional role of stromal cells in orchestrating and regulating cytotoxic T cell responses potentially dangerous for the host. Lymph nodes are complex structures with many different cell types and therefore require a appropriate procedure for isolation of the desired cell populations. Currently, protocols for the isolation of lymph node stromal cells rely on enzymatic digestion with varying incubation times; however, stromal cells and their surface molecules are sensitive to these enzymes, which results in loss of surface marker expression and cell death. Here a short enzymatic digestion protocol combined with automated mechanical disruption to obtain viable single cells suspension of lymph node stromal cells maintaining their surface molecule expression is proposed. PMID:25178108

  15. Measure of Node Similarity in Multilayer Networks

    PubMed Central

    Mollgaard, Anders; Zettler, Ingo; Dammeyer, Jesper; Jensen, Mogens H.; Lehmann, Sune; Mathiesen, Joachim

    2016-01-01

    The weight of links in a network is often related to the similarity of the nodes. Here, we introduce a simple tunable measure for analysing the similarity of nodes across different link weights. In particular, we use the measure to analyze homophily in a group of 659 freshman students at a large university. Our analysis is based on data obtained using smartphones equipped with custom data collection software, complemented by questionnaire-based data. The network of social contacts is represented as a weighted multilayer network constructed from different channels of telecommunication as well as data on face-to-face contacts. We find that even strongly connected individuals are not more similar with respect to basic personality traits than randomly chosen pairs of individuals. In contrast, several socio-demographics variables have a significant degree of similarity. We further observe that similarity might be present in one layer of the multilayer network and simultaneously be absent in the other layers. For a variable such as gender, our measure reveals a transition from similarity between nodes connected with links of relatively low weight to dis-similarity for the nodes connected by the strongest links. We finally analyze the overlap between layers in the network for different levels of acquaintanceships. PMID:27300084

  16. Node influence identification via resource allocation dynamics

    NASA Astrophysics Data System (ADS)

    Ma, Shu-Jiao; Ren, Zhuo-Ming; Ye, Chun-Ming; Guo, Qiang; Liu, Jian-Guo

    2014-07-01

    Identifying the node influence in complex networks is an important task to optimally use the network structure and ensure the more efficient spreading in information. In this paper, by taking into account the resource allocation dynamics (RAD) and the k-shell decomposition method, we present an improved method namely RAD to generate the ranking list to evaluate the node influence. First, comparing with the epidemic process results for four real networks, the RAD method could identify the node influence more accurate than the ones generated by the topology-based measures including the degree, k-shell, closeness and the betweenness. Then, a growing scale-free network model with tunable assortative coefficient is introduced to analyze the effect of the assortative coefficient on the accuracy of the RAD method. Finally, the positive correlation is found between the RAD method and the k-shell values which display an exponential form. This work would be helpful for deeply understanding the node influence of a network.

  17. Measure of Node Similarity in Multilayer Networks.

    PubMed

    Mollgaard, Anders; Zettler, Ingo; Dammeyer, Jesper; Jensen, Mogens H; Lehmann, Sune; Mathiesen, Joachim

    2016-01-01

    The weight of links in a network is often related to the similarity of the nodes. Here, we introduce a simple tunable measure for analysing the similarity of nodes across different link weights. In particular, we use the measure to analyze homophily in a group of 659 freshman students at a large university. Our analysis is based on data obtained using smartphones equipped with custom data collection software, complemented by questionnaire-based data. The network of social contacts is represented as a weighted multilayer network constructed from different channels of telecommunication as well as data on face-to-face contacts. We find that even strongly connected individuals are not more similar with respect to basic personality traits than randomly chosen pairs of individuals. In contrast, several socio-demographics variables have a significant degree of similarity. We further observe that similarity might be present in one layer of the multilayer network and simultaneously be absent in the other layers. For a variable such as gender, our measure reveals a transition from similarity between nodes connected with links of relatively low weight to dis-similarity for the nodes connected by the strongest links. We finally analyze the overlap between layers in the network for different levels of acquaintanceships. PMID:27300084

  18. The lymph node in chronic lymphocytic leukemia.

    PubMed

    Dick, F R; Maca, R D

    1978-01-01

    Lymph nodes were examined from 41 cases of typical chronic lymphocytic leukemia (CLL). Degree of immaturity was graded as absent to minimal (Grade I), moderate (Grade II) and marked (Grade III). A moderate degree of immaturity was found in the lymph node in 14 of 41 cases even though the cells seen on the initial bone marrow and peripheral blood smears obtained from these patients were essentially all mature. The morphology of these nodes could be confused with poorly differentiated lymphocytic or mixed lymphocytic-histiocytic lymphoma in terms of the degree of immaturity present. A marked degree of immaturity present. A marked degree of immaturity was found in 5 cases; the morphology of these cases resembled histiocytic lymphoma. In the remaining 22 cases immaturity was essentially absent. The morphology of these cases was similar to that of diffuse well differentiated lymphocytic lymphoma. Our studies suggest that a moderate degree of immaturity in the lymph node of patients with CLL does not indicate that these patients will have a marked shortening of their survival. PMID:580071

  19. Toward 7nm target on product overlay for C028 FDSOI technology

    NASA Astrophysics Data System (ADS)

    Gatefait, Maxime; Le-Gratiet, Bertrand; Goirand, Pierre Jerome; Lam, Auguste; Van Haren, Richard; Pastol, Anne; Doytcheva, Maya; Liu, Xing Lan; Beltman, Jan

    2013-04-01

    The continuous need for lithography overlay performance improvement is a key point for advanced integrated circuit manufacturing. Overlay control is more and more challenging in the 2x nm process nodes regarding functionality margin of the chip and tool capability. Transistor architecture rules which are set, confirm poly to contact space as the most critical one for 28nm technology node. Critical Dimension variability of these layers, even with best in class process stability, in addition to design constraint lead to on product overlay specifications of around 7nm. In order to ensure that the target is met in production environment and to identify potential ways for improvement, identification of the contributors to overlay errors is essential. We have introduced a novel budget breakdown methodology using both bottom-up and top-down overlay data. For the bottom up part, we have performed extensive testing with very high sampling scheme so as to quantify the main effects. In-line overlay metrology data has been used for top down approach to verify the overall performance in production. In this paper we focused on the 28nm contact to gate overlay in a FDSOI process. The initial inconsistency between bottom up and top down results led us to further exploration of the root cause of these inconsistencies. We have been able to highlight key figures to focus on, like reticle heating, wafer table contamination and etch processing effects. Finally, we conclude on 7nm overlay target achievement feasibility in high volume manufacturing environment.

  20. Use of a Hybrid Edge Node-Centroid Node Approach to Thermal Modeling

    NASA Technical Reports Server (NTRS)

    Peabody, Hume L.

    2010-01-01

    A recent proposal submitted for an ESA mission required that models be delivered in ESARAD/ESATAN formats. ThermalDesktop was the preferable analysis code to be used for model development with a conversion done as the final step before delivery. However, due to some differences between the capabilities of the two codes, a unique approach was developed to take advantage of the edge node capability of ThermalDesktop while maintaining the centroid node approach used by ESARAD. In essence, two separate meshes were used: one for conduction and one for radiation. The conduction calculations were eliminated from the radiation surfaces and the capacitance and radiative calculations were eliminated from the conduction surfaces. The resulting conduction surface nodes were coincident with all nodes of the radiation surface and were subsequently merged, while the nodes along the edges remained free. Merging of nodes on the edges of adjacent surfaces provided the conductive links between surfaces. Lastly, all nodes along edges were placed into the subnetwork and the resulting supernetwork included only the nodes associated with radiation surfaces. This approach had both benefits and disadvantages. The use of centroid, surface based radiation reduces the overall size of the radiation network, which is often the most computationally intensive part of the modeling process. Furthermore, using the conduction surfaces and allowing ThermalDesktop to calculate the conduction network can save significant time by not having to manually generate the couplings. Lastly, the resulting GMM/TMM models can be exported to formats which do not support edge nodes. One drawback, however, is the necessity to maintain two sets of surfaces. This requires additional care on the part of the analyst to ensure communication between the conductive and radiative surfaces in the resulting overall network. However, with more frequent use of this technique, the benefits of this approach can far outweigh the

  1. Increased hippocampal excitability in the 3xTgAD mouse model for Alzheimer's disease in vivo.

    PubMed

    Davis, Katherine E; Fox, Sarah; Gigg, John

    2014-01-01

    Mouse Alzheimer's disease (AD) models develop age- and region-specific pathology throughout the hippocampal formation. One recently established pathological correlate is an increase in hippocampal excitability in vivo. Hippocampal pathology also produces episodic memory decline in human AD and we have shown a similar episodic deficit in 3xTg AD model mice aged 3-6 months. Here, we tested whether hippocampal synaptic dysfunction accompanies this cognitive deficit by probing dorsal CA1 and DG synaptic responses in anaesthetized, 4-6 month-old 3xTgAD mice. As our previous reports highlighted a decline in episodic performance in aged control mice, we included aged cohorts for comparison. CA1 and DG responses to low-frequency perforant path stimulation were comparable between 3xTgAD and controls at both age ranges. As expected, DG recordings in controls showed paired-pulse depression; however, paired-pulse facilitation was observed in DG and CA1 of young and old 3xTgAD mice. During stimulus trains both short-latency (presumably monosynaptic: 'direct') and long-latency (presumably polysynaptic: 're-entrant') responses were observed. Facilitation of direct responses was modest in 3xTgAD animals. However, re-entrant responses in DG and CA1 of young 3xTgAD mice developed earlier in the stimulus train and with larger amplitude when compared to controls. Old mice showed less DG paired-pulse depression and no evidence for re-entrance. In summary, DG and CA1 responses to low-frequency stimulation in all groups were comparable, suggesting no loss of synaptic connectivity in 3xTgAD mice. However, higher-frequency activation revealed complex change in synaptic excitability in DG and CA1 of 3xTgAD mice. In particular, short-term plasticity in DG and CA1 was facilitated in 3xTgAD mice, most evidently in younger animals. In addition, re-entrance was facilitated in young 3xTgAD mice. Overall, these data suggest that the episodic-like memory deficit in 3xTgAD mice could be due to the

  2. Penile lymphoscintigraphy for sentinel node identification.

    PubMed

    Valdés Olmos, R A; Tanis, P J; Hoefnagel, C A; Jansen, L; Nieweg, O E; Meinhardt, W; Horenblas, S

    2001-05-01

    Lymphoscintigraphy for sentinel node (SN) identification has been extensively validated in breast cancer and melanoma. The aim of this study was to evaluate the findings of lymphoscintigraphy for SN identification in carcinoma of the penis. Lymphoscintigraphy was performed in 74 consecutive patients (mean age 62.2 years, range 28-87 years) with clinically lymph node-negative squamous cell carcinoma of the penis (stage T2 or greater). Following local anaesthesia by xylocaine 10% spray, technetium-99m nanocolloid (mean dose 64.8 MBq, range 40-131 MBq) in a volume of 0.3-0.4 ml was injected intradermally around the tumour. Shortly after injection, a 20-min dynamic study was performed with a dual-head gamma camera; subsequently, static anterior and lateral images were obtained at 30 min and 2 h using simultaneous cobalt-57 flood source transmission scanning. 57Co-assisted skin marking defined SN location for gamma probe/blue dye-guided biopsy, which was performed the next day. The SN visualization rate was 97% (72/74). Lymphatic drainage was bilateral in 81% of the cases (58/72), exclusively to the left groin in 13% (9/72) and only to the right groin in 6%. Bilateral lymph node drainage was synchronous in 38% (22/58) and asynchronous in 62% (in 18 patients the initial route was the left groin, and in the other 18, the right groin). Visualization before 30 min occurred in 66 patients (93%), in 64 of them (88%) already during the dynamic study. A total of 173 SNs were visualized (85 in the right groin, 88 in the left groin). Pitfalls were caused by inguinal skin contamination during injection (four patients) and intracavernous administration (one patient). At surgery, a total of 161 SNs were identified and removed. Sixteen patients (22%) had a tumour-positive SN and underwent standard regional lymph node dissection subsequently. During follow-up (median 28 months, range 3-74 months), two patients with a negative SN developed lymph node metastases in the mapped basin. It

  3. Inline detection of Chrome degradation on binary 193nm photomasks

    NASA Astrophysics Data System (ADS)

    Dufaye, Félix; Sippel, Astrid; Wylie, Mark; García-Berríos, Edgardo; Crawford, Charles; Hess, Carl; Sartelli, Luca; Pogliani, Carlo; Miyashita, Hiroyuki; Gough, Stuart; Sundermann, Frank; Brochard, Christophe

    2013-09-01

    193nm binary photomasks are still used in the semiconductor industry for the lithography of some critical layers for the nodes 90nm and 65nm, with high volumes and over long periods. However, these 193nm binary photomasks can be impacted by a phenomenon of chrome oxidation leading to critical dimensions uniformity (CDU) degradation with a pronounced radial signature. If not detected early enough, this CDU degradation may cause defectivity issues and lower yield on wafers. Fortunately, a standard cleaning and repellicle service at the mask shop has been demonstrated as efficient to remove the grown materials and get the photomask CD back on target.Some detection methods have been already described in literature, such as wafer CD intrafield monitoring (ACLV), giving reliable results but also consuming additional SEM time with less precision than direct photomask measurement. In this paper, we propose another approach, by monitoring the CDU directly on the photomask, concurrently with defect inspection for regular requalification to production for wafer fabs. For this study, we focused on a Metal layer in a 90nm technology node. Wafers have been exposed with production conditions and then measured by SEM-CD. Afterwards, this photomask has been measured with a SEM-CD in mask shop and also inspected on a KLA-Tencor X5.2 inspection system, with pixels 125 and 90nm, to evaluate the Intensity based Critical Dimension Uniformity (iCDU) option. iCDU was firstly developed to provide feed-forward CDU maps for scanner intrafield corrections, from arrayed dense structures on memory photomasks. Due to layout complexity and differing feature types, CDU monitoring on logic photomasks used to pose unique challenges.The selection of suitable feature types for CDU monitoring on logic photomasks is no longer an issue, since the transmitted intensity map gives all the needed information, as shown in this paper. In this study, the photomask was heavily degraded after more than 18,000 300

  4. Cu3-xP Nanocrystals as a Material Platform for Near-Infrared Plasmonics and Cation Exchange Reactions

    PubMed Central

    2015-01-01

    Synthesis approaches to colloidal Cu3P nanocrystals (NCs) have been recently developed, and their optical absorption features in the near-infrared (NIR) have been interpreted as arising from a localized surface plasmon resonance (LSPR). Our pump–probe measurements on platelet-shaped Cu3-xP NCs corroborate the plasmonic character of this absorption. In accordance with studies on crystal structure analysis of Cu3P dating back to the 1970s, our density functional calculations indicate that this material is substoichiometric in copper, since the energy of formation of Cu vacancies in certain crystallographic sites is negative, that is, they are thermodynamically favored. Also, thermoelectric measurements point to a p-type behavior of the majority carriers from films of Cu3-xP NCs. It is likely that both the LSPR and the p-type character of our Cu3-xP NCs arise from the presence of a large number of Cu vacancies in such NCs. Motivated by the presence of Cu vacancies that facilitate the ion diffusion, we have additionally exploited Cu3-xP NCs as a starting material on which to probe cation exchange reactions. We demonstrate here that Cu3-xP NCs can be easily cation-exchanged to hexagonal wurtzite InP NCs, with preservation of the anion framework (the anion framework in Cu3-xP is very close to that of wurtzite InP). Intermediate steps in this reaction are represented by Cu3-xP/InP heterostructures, as a consequence of the fact that the exchange between Cu+ and In3+ ions starts from the peripheral corners of each NC and gradually evolves toward the center. The feasibility of this transformation makes Cu3-xP NCs an interesting material platform from which to access other metal phosphides by cation exchange. PMID:25960605

  5. Design technology co-optimization for 14/10nm metal1 double patterning layer

    NASA Astrophysics Data System (ADS)

    Duan, Yingli; Su, Xiaojing; Chen, Ying; Su, Yajuan; Shao, Feng; Zhang, Recco; Lei, Junjiang; Wei, Yayi

    2016-03-01

    Design and technology co-optimization (DTCO) can satisfy the needs of the design, generate robust design rule, and avoid unfriendly patterns at the early stage of design to ensure a high level of manufacturability of the product by the technical capability of the present process. The DTCO methodology in this paper includes design rule translation, layout analysis, model validation, hotspots classification and design rule optimization mainly. The correlation of the DTCO and double patterning (DPT) can optimize the related design rule and generate friendlier layout which meets the requirement of the 14/10nm technology node. The experiment demonstrates the methodology of DPT-compliant DTCO which is applied to a metal1 layer from the 14/10nm node. The DTCO workflow proposed in our job is an efficient solution for optimizing the design rules for 14/10 nm tech node Metal1 layer. And the paper also discussed and did the verification about how to tune the design rule of the U-shape and L-shape structures in a DPT-aware metal layer.

  6. Iterative resource allocation based on propagation feature of node for identifying the influential nodes

    NASA Astrophysics Data System (ADS)

    Zhong, Lin-Feng; Liu, Jian-Guo; Shang, Ming-Sheng

    2015-10-01

    The identification of the influential nodes in networks is one of the most promising domains. In this paper, we present an improved iterative resource allocation (IIRA) method by considering the centrality information of neighbors and the influence of spreading rate for a target node. Comparing with the results of the Susceptible Infected Recovered (SIR) model for four real networks, the IIRA method could identify influential nodes more accurately than the tradition IRA method. Specially, in the Erdös network, Kendall's tau could be enhanced 23% when the spreading rate is 0.12. In the Protein network, Kendall's tau could be enhanced 24% when the spreading rate is 0.08.

  7. Planetary Data System Spaceborne Thermal Data Sub-Node of the Geosciences Node

    NASA Technical Reports Server (NTRS)

    Christensen, Philip R.

    1997-01-01

    The objectives of this proposal were: (1) to assemble the existing spacecraft thermal-infrared data and to place these data into a uniform format as specified by the PDS; (2) to develop a standardized software package, user interface, and catalog database to support the access and analysis of existing and planned thermal infrared datasets in order to provide wide community access to these data; (3) to support the distribution of Thermal SubNode data to users as requested; (4) to incorporate future spacecraft thermal observations into the Thermal SubNode; and (5) to sponsor workshops on the applications of Thermal SubNode data.

  8. Composition dependence of superconductivity in YBa2(Cu(3-x)Al(x))Oy

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P.

    1991-01-01

    Eleven different compositions in the system YBa2(Cu(3-x)Al(x))O(y) (x = 0 to 0.3) have been synthesized and characterized by electrical resistivity measurements, powder x-ray diffraction, and scanning electron microscopy. The superconducting transition temperature T sub c (onset) was almost unaffected by the presence of alumina due to its limited solubility in YBa2Cu3O(7-x). However, T sub c(R = 0) gradually decreased, and the resistive tails became longer with increasing Al2O3 concentration. This was probably due to formation of BaAl2O4 and other impurity phases from chemical decomposition of the superconducting phase by reaction with Al2O3.

  9. Composition dependence of superconductivity in YBa2(Cu(3-x)Al(x))O(y)

    NASA Technical Reports Server (NTRS)

    Bansal, N. P.

    1993-01-01

    Eleven different compositions in the system YBa2(Cu(3-x)Al(x))O(y) (x = 0 to 0.3) have been synthesized and characterized by electrical resistivity measurements, powder X-ray diffraction, and scanning electron microscopy. The superconducting transition temperature T sub c (onset) was almost unaffected by the presence of alumina due to its limited solubility in YBa2Cu3O(7-x). However, T sub c(R = 0) gradually decreased, and the resistive tails became longer with increasing Al2O3 concentration. This was probably due to formation of BaAl2O4 and other impurity phases from chemical decomposition of the superconducting phase by reaction with Al2O3.

  10. Defects in Bi2Te3-x Se x single crystals

    NASA Astrophysics Data System (ADS)

    Lošt'ák, P.; Drašar, Č.; Bachan, D.; Beneš, L.; Krejčová, A.

    2010-03-01

    Single crystals of a ternary system based on Bi2Te3-x Se x (nominally x=0.0-0.2) were prepared using the Bridgman technique. Samples with varying content of Se were characterized by the measurement of lattice parameters, electrical conductivity σ⊥c and Hall coefficient R H(B‖ c). The actual concentration of selenium c Se in the samples was determined using atomic emission spectroscopy. While a small selenium concentration enhances the free hole concentration P after passing a maximum, the hole concentration decreases at higher selenium concentrations. The extreme-like dependence P=f(c Se) is explained in terms of a change of the native defect concentration due to the substitution of selenium atoms by tellurium ones.

  11. CHF prediction of GE 3 x 3 rod bundle based on BODYFIT-2PE. [BWR

    SciTech Connect

    Chien, T.H.; Chen, B.C.J.; Sha, W.T.; Kim, J.H.

    1983-01-01

    A General Electric 3 x 3 rod bundle critical heat flux (CHF) experiment was analyzed by using BODYFIT-2PE. (Boundary-fitted coordinates-2 phase partially elliptic). BODYFIT-2PE is a three-dimensional, steady-state/transient, single-phase rod-bundle thermal-hydraulic computer program based on the technique of boudnary-fitted coordinate system. In this coordinate system, all the physical boundaries are made to be coincident with the coordinate lines so that the boundary conditions, such as constant heat fluxes and zero velocities, can be accurately represented without interpolation. However, the transformed coordinate system is not unique for a given geometric configuration. The more orthogonal the coordinates are, the faster the rates of calculational convergence. The generation of the transformed coordinates is based on the solution of a set of second-order partial differential equations, subject to a set of geometric boundary conditions. A simple Laplacian is used in the present study.

  12. Phase Structure of Confining Theories on R{sup 3}xS{sup 1}

    SciTech Connect

    Nishimura, Hiromichi; Ogilvie, Michael C.

    2011-05-23

    Recent work on QCD-like theories on R{sup 3}xS{sup 1} has revealed that a confined phase can exist when the circumference L of S{sup 1} is sufficiently small. Adjoint QCD and double-trace deformation theories with certain conditions are such theories, and we present some new results for their phase diagrams. First we show the connection between the large-L and small-L confined regions in the phase diagram of SU(3) adjoint QCD using Polyakov-Nambu-Jona Lasinio models. Then we consider an SU(2) double-trace deformation theory with adjoint scalars and study conflicts between the Higgs and small-L confined phase.

  13. Simultaneous three-wavelength continuous wave laser at 946 nm, 1319 nm and 1064 nm in Nd:YAG

    NASA Astrophysics Data System (ADS)

    Lü, Yanfei; Zhao, Lianshui; Zhai, Pei; Xia, Jing; Fu, Xihong; Li, Shutao

    2013-01-01

    A continuous-wave (cw) diode-end-pumped Nd:YAG laser that generates simultaneous laser at the wavelengths 946 nm, 1319 nm and 1064 nm is demonstrated. The optimum oscillation condition for the simultaneous three-wavelength operation has been derived. Using the separation of the three output couplers, we obtained the maximum output powers of 0.24 W at 946 nm, 1.07 W at 1319 nm and 1.88 W at 1064 nm at the absorbed pump power of 11.2 W. A total output power of 3.19 W for the three-wavelength was achieved at the absorbed pump power of 11.2 W with optical conversion efficiency of 28.5%.

  14. Magneto-transport behaviour of Bi2Se3-xTex : role of disorder.

    PubMed

    Amaladass, E P; Devidas, T R; Sharma, Shilpam; Sundar, C S; Mani, Awadhesh; Bharathi, A

    2016-02-24

    Magneto-resistance and Hall resistance measurements have been carried out in fast-cooled single crystals of Bi2Se3-xTex (x  =  0 to 2) in 4-300 K temperature range, under magnetic fields up to 15 T. The variation of resistivity with temperature that points to a metallic behaviour in Bi2Se3, shows an up-turn at low temperatures in the Te doped samples. Magneto-resistance measurements in Bi2Se3 show clear signatures of Shubnikov-de Hass (SdH) oscillations that gets suppressed in the Te doped samples. In the Bi2SeTe2 sample, the magneto-resistance shows a cusp like positive magneto-resistance at low magnetic fields and low temperatures, a feature associated with weak anti-localisation (WAL), that crosses over to negative magneto-resistance at higher fields. The qualitatively different magneto-transport behaviour seen in Bi2SeTe2 as compared to Bi2Se3 is rationalised in terms of the disorder, through an estimate of the carrier density, carrier mobility and an analysis in terms of the Ioffe-Regel criterion with support from Hall Effect measurements. We demonstrate that by introducing Te, in the strongly disordered samples a smooth crossover of SdH and WAL can be seen in the Bi2Se3-xTex series, both of which provide signatures for the presence of topological surface states. PMID:26812889

  15. Age-dependent impairment of glucose tolerance in the 3xTg-AD mouse model of Alzheimer's disease.

    PubMed

    Vandal, Milene; White, Phillip J; Chevrier, Geneviève; Tremblay, Cyntia; St-Amour, Isabelle; Planel, Emmanuel; Marette, Andre; Calon, Frederic

    2015-10-01

    Alzheimer's disease (AD) has been associated with type II diabetes (T2D) and obesity in several epidemiologic studies. To determine whether AD neuropathology can cause peripheral metabolic impairments, we investigated metabolic parameters in the triple-transgenic (3xTg)-AD mouse model of AD, compared with those in nontransgenic (non-Tg) controls, at 6, 8, and 14 mo of age. We found a more pronounced cortical Aβ accumulation (2- and 3.5-fold increase in Aβ42 in the soluble and insoluble protein fractions, respectively) in female 3xTg-AD mice than in the males. Furthermore, female 3xTg-AD mice displayed a significant deterioration in glucose tolerance (AUC, +118% vs. non-Tg mice at 14 mo). Fasting plasma insulin levels rose 2.5-fold from 6 to 14 mo of age in female 3xTg-AD mice. Glucose intolerance and cortical amyloid pathology worsened with age, and both were more pronounced in the females. Pancreatic amyloidopathy was revealed and could underlie the observed deficit in glycemic response in 3xTg-AD mice. The present results suggest that AD-like neuropathology extends to the pancreas in the 3xTg-AD mouse, leading to glucose intolerance and contributing to a pathologic self-amplifying loop between AD and T2D. PMID:26108977

  16. Extreme ultraviolet lithography patterned mask defect detection performance evaluation toward 16- to 11-nm half-pitch generation

    NASA Astrophysics Data System (ADS)

    Hirano, Ryoichi; Iida, Susumu; Amano, Tsuyoshi; Watanabe, Hidehiro; Hatakeyama, Masahiro; Murakami, Takeshi; Yoshikawa, Shoji; Terao, Kenji

    2015-07-01

    High-sensitivity and low-noise extreme ultraviolet (EUV) mask pattern defect detection is one of the major issues remaining to be addressed in device fabrication using extreme ultraviolet lithography (EUVL). We have designed a projection electron microscopy (PEM) system, which has proven to be quite promising for half-pitch (hp) 16-nm node to hp 11-nm node mask inspection. The PEM system was integrated into a pattern inspection system for defect detection sensitivity evaluation. To improve the performance of hp 16-nm patterned mask defect detection toward hp 11-nm EUVL patterned mask, defect detection signal characteristics, which depend on hp 64-nm pattern image intensity deviation on EUVL mask, were studied. Image adjustment effect of the captured images for die-to-die defect detection was evaluated before the start of the defect detection image-processing sequence. Image correction of intrafield intensity unevenness and L/S pattern image contrast deviation suppresses the generation of false defects. Captured images of extrusion and intrusion defects in hp 64-nm L/S patterns were used for detection. Applying the image correction for defect detection, 12-nm sized intrusion defect, which was smaller than our target size for hp 16-nm defect detection requirements, was identified without false defects.

  17. Fast Anion-Exchange in Highly Luminescent Nanocrystals of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, I)

    PubMed Central

    2015-01-01

    Postsynthetic chemical transformations of colloidal nanocrystals, such as ion-exchange reactions, provide an avenue to compositional fine-tuning or to otherwise inaccessible materials and morphologies. While cation-exchange is facile and commonplace, anion-exchange reactions have not received substantial deployment. Here we report fast, low-temperature, deliberately partial, or complete anion-exchange in highly luminescent semiconductor nanocrystals of cesium lead halide perovskites (CsPbX3, X = Cl, Br, I). By adjusting the halide ratios in the colloidal nanocrystal solution, the bright photoluminescence can be tuned over the entire visible spectral region (410–700 nm) while maintaining high quantum yields of 20–80% and narrow emission line widths of 10–40 nm (from blue to red). Furthermore, fast internanocrystal anion-exchange is demonstrated, leading to uniform CsPb(Cl/Br)3 or CsPb(Br/I)3 compositions simply by mixing CsPbCl3, CsPbBr3, and CsPbI3 nanocrystals in appropriate ratios. PMID:26207728

  18. Fast Anion-Exchange in Highly Luminescent Nanocrystals of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, I).

    PubMed

    Nedelcu, Georgian; Protesescu, Loredana; Yakunin, Sergii; Bodnarchuk, Maryna I; Grotevent, Matthias J; Kovalenko, Maksym V

    2015-08-12

    Postsynthetic chemical transformations of colloidal nanocrystals, such as ion-exchange reactions, provide an avenue to compositional fine-tuning or to otherwise inaccessible materials and morphologies. While cation-exchange is facile and commonplace, anion-exchange reactions have not received substantial deployment. Here we report fast, low-temperature, deliberately partial, or complete anion-exchange in highly luminescent semiconductor nanocrystals of cesium lead halide perovskites (CsPbX3, X = Cl, Br, I). By adjusting the halide ratios in the colloidal nanocrystal solution, the bright photoluminescence can be tuned over the entire visible spectral region (410-700 nm) while maintaining high quantum yields of 20-80% and narrow emission line widths of 10-40 nm (from blue to red). Furthermore, fast internanocrystal anion-exchange is demonstrated, leading to uniform CsPb(Cl/Br)3 or CsPb(Br/I)3 compositions simply by mixing CsPbCl3, CsPbBr3, and CsPbI3 nanocrystals in appropriate ratios. PMID:26207728

  19. From 120 to 32 nm CMOS technology: development of OPC and RET to rescue optical lithography

    NASA Astrophysics Data System (ADS)

    Trouiller, Yorick

    2006-10-01

    Starting from the 120 nm CMOS technology node down to the 32 nm node, we have entered into a new lithographic regime. The wavelength has not changed (only 193 nm), and we move closer and closer to the theoretical optical resolution limit. Therefore, Resolution Enhancement Techniques (RET) have been developed in order to print all shapes properly and close the resolution gap. The primary RET developed are off-axis illumination, sub-resolution assist features and a phase shift mask. Moreover, working closer to the resolution limit implies bigger image distortion between the mask and the silicon. For this purpose OPC (Optical Proximity Correction) has been widely used by making mask pre-compensation of all non linear effects, optical diffraction and interference effects, resist and etch. RET and OPC are also fundamentally linked. RET such as off-axis illumination generates more distortion, and therefore justifies the need of more aggressive OPC, and RET techniques like Alt PSM and sub-resolution assist features are generated through the OPC infrastructure. From its first industrial utilization for 120 nm node to 32 nm prospectively, many evolutions have been seen for OPC. These include the generalisation to all lithographic layers, moving to pixel based simulation, usage of full chip simulation and verification, the incorporation of process window effects like Energy Latitude or Depth of Focus into the OPC algorithm, and inverse lithography approach. For RET, we have seen huge differentiation depending on the type of application, such as logic or memory. In conclusion, we need to consider design as a third party that is playing a key role in this RET-OPC synergy. To use more aggressive RET and reduce the cycle time of OPC recipe development, more regular designs are considered as a key enabler for the future: they will allow logic makers to consider RET options that are pushed as far as those used by memory makers. To cite this article: Y. Trouiller, C. R. Physique 7

  20. Effectiveness of benzoporphyrin derivative monoacid (BPD-MA) and fiberoptic sensor in detecting metastatic neoplasm in lymph nodes in rats

    NASA Astrophysics Data System (ADS)

    Vari, Sandor G.; Pergadia, Vani R.; Wolfson, David; Thomas, Reem; Stavridi, Marigo; Snyder, Wendy J.; Fishbein, Michael C.; Papaioannou, Thanassis; Shapiro, L.; Grundfest, Warren S.

    1994-01-01

    An intensity ration of the photosensitizing agent to the natural fluorescence was used to determine the condition of lymph nodes (normal, inflammatory, or with metastases). Eighty- one Lobund Wistar rats were inoculated with Pollard rat adenocarcinoma cells. After 40 days the rats were injected with 0.75 mg/kg BPD-MA. A helium-cadmium lasers (442 nm) was used for both light delivery ad fluorescence acquisition. Fluorescence spectra were acquired and analyzed by an optical multichannel analyzer 9 EG&G, OMA III). Unbalanced repeated measures analysis of variance (ANOVA) was done on the mean intensity ratio according to location. Several locations recorded for each rat were modeled as the repeated variable. The fluorescence signal obtained from lymph nodes with metastases indicated high drug amounts, greater than in the skin, tumors, and all other tissues. The lowest fluorescence intensity ratios were observed in the skin. This leads us to the conclusion that the amount of Photofrin porfimer sodium and BPD-MA which localized in the metastatic lymph nodes is higher than in tumor and all other healthy tissues. Among normal lymph nodes there were significant differences according to the site of the node, with the left iliac lymph nodes having higher IR values than either the mesenteric (MC I or MC II) nodes. The geometric means of IR are consistently higher in normal as compared to inflammatory nodes for each location. The optical biopsy needle with laser-induced fluorescence detection and exogenic fluorochrome is a sensitive, novel techniques to localize small boundaries of metastatic neoplasm in lymph nodes.

  1. Analysis of motor function in 6-month-old male and female 3xTg-AD mice.

    PubMed

    Stover, Kurt R; Campbell, Mackenzie A; Van Winssen, Christine M; Brown, Richard E

    2015-03-15

    The 3xTg-AD mouse has high validity as a model of Alzheimer's disease (AD) because it develops both amyloid beta plaques and neurofibrillary tangles. Human patients with AD typically develop motor deficits, which worsen as the disease progresses, but 3xTg-AD mice have been reported to show enhanced motor abilities. We investigated the motor behaviour phenotype of male and female 3xTg-AD and B6129SF2 wildtype mice on a battery of motor behaviours at 6 months of age. Compared to wildtype mice, the 3xTg-AD mice had enhanced motor performance on the Rotarod, but worse performance on the grid suspension task. In gait analysis 3xTg-AD mice had a longer stride length and made more foot slips on the balance beam than wildtype mice. There was no overall difference in voluntary wheel-running activity between genotypes, but there was a disruption in circadian activity rhythm in 3xTg-AD mice. In some motor tasks, such as the Rotarod and balance beam, females appeared to perform better than males, but this sex differences was accounted for by differences in body weight. Our results indicate that while the 3xTg-AD mice show enhanced performance on the Rotarod, they have poorer performance on other motor behaviour tasks, indicating that their motor behaviour phenotype is more complex than previously reported. The presence of the P301L transgene may explain the enhancement of Rotarod performance but the poorer performance on other motor behaviour tasks may be due to other transgenes. PMID:25486177

  2. Early diagnosis of lymph node metastasis: Importance of intranodal pressures.

    PubMed

    Miura, Yoshinobu; Mikada, Mamoru; Ouchi, Tomoki; Horie, Sachiko; Takeda, Kazu; Yamaki, Teppei; Sakamoto, Maya; Mori, Shiro; Kodama, Tetsuya

    2016-03-01

    Regional lymph node status is an important prognostic indicator of tumor aggressiveness. However, early diagnosis of metastasis using intranodal pressure, at a stage when lymph node size has not changed significantly, has not been investigated. Here, we use an MXH10/Mo-lpr/lpr mouse model of lymph node metastasis to show that intranodal pressure increases in both the subiliac lymph node and proper axillary lymph node, which are connected by lymphatic vessels, when tumor cells are injected into the subiliac lymph node to induce metastasis to the proper axillary lymph node. We found that intranodal pressure in the subiliac lymph node increased at the stage when metastasis was detected by in vivo bioluminescence, but when proper axillary lymph node volume (measured by high-frequency ultrasound imaging) had not increased significantly. Intravenously injected liposomes, encapsulating indocyanine green, were detected in solid tumors by in vivo bioluminescence, but not in the proper axillary lymph node. Basic blood vessel and lymphatic channel structures were maintained in the proper axillary lymph node, although sinus histiocytosis was detected. These results show that intranodal pressure in the proper axillary lymph node increases at early stages when metastatic tumor cells have not fully proliferated. Intranodal pressure may be a useful parameter for facilitating early diagnosis of lymph node metastasis. PMID:26716604

  3. Lymphatic mapping of the breast: locating the sentinel lymph nodes.

    PubMed

    Uren, R F; Howman-Giles, R; Renwick, S B; Gillett, D

    2001-06-01

    When the concept of sentinel lymph node biopsy was described in patients with melanoma, researchers quickly started to use lymphatic mapping techniques in breast cancer patients in an attempt to locate the sentinel node in the axilla. We have been performing mammary lymphoscintigraphy in this role for 6 years and have now studied 159 patients. Like others, we have found that most breast cancers (93%) have lymphatic drainage that includes the axilla, and we have found an average of 1.4 axillary sentinel nodes in these patients. Surgical biopsy of the axillary sentinel nodes accurately staged the node field in 96% of patients. We have also found, however, that the pattern of lymphatic drainage from the cancer site is unpredictable; and in 49% of patients lymphatic drainage occurred across the center line of the breast to axillary or internal mammary sentinel nodes. In more than half of our patients (56%) lymphatic drainage occurred to lymph nodes outside the axilla including the internal mammary (45%), supraclavicular (13%), and interpectoral and intramammary interval nodes (12%). These nodes are also sentinel nodes, and their presence indicates that a sentinel node biopsy procedure that stages only the status of the axillary lymph nodes has the potential to understage about half the patients with breast cancer. High quality lymphoscintigraphy allows accurate mapping of peritumoral lymphatic drainage in most patients with breast cancer. It is possible that in the future accurate nodal staging in each individual will involve biopsy of all sentinel lymph nodes, regardless of their location. PMID:11376417

  4. Quantitative photoacoustic assessment of ex-vivo lymph nodes of colorectal cancer patients

    NASA Astrophysics Data System (ADS)

    Sampathkumar, Ashwin; Mamou, Jonathan; Saegusa-Beercroft, Emi; Chitnis, Parag V.; Machi, Junji; Feleppa, Ernest J.

    2015-03-01

    Staging of cancers and selection of appropriate treatment requires histological examination of multiple dissected lymph nodes (LNs) per patient, so that a staggering number of nodes require histopathological examination, and the finite resources of pathology facilities create a severe processing bottleneck. Histologically examining the entire 3D volume of every dissected node is not feasible, and therefore, only the central region of each node is examined histologically, which results in severe sampling limitations. In this work, we assess the feasibility of using quantitative photoacoustics (QPA) to overcome the limitations imposed by current procedures and eliminate the resulting under sampling in node assessments. QPA is emerging as a new hybrid modality that assesses tissue properties and classifies tissue type based on multiple estimates derived from spectrum analysis of photoacoustic (PA) radiofrequency (RF) data and from statistical analysis of envelope-signal data derived from the RF signals. Our study seeks to use QPA to distinguish cancerous from non-cancerous regions of dissected LNs and hence serve as a reliable means of imaging and detecting small but clinically significant cancerous foci that would be missed by current methods. Dissected lymph nodes were placed in a water bath and PA signals were generated using a wavelength-tunable (680-950 nm) laser. A 26-MHz, f-2 transducer was used to sense the PA signals. We present an overview of our experimental setup; provide a statistical analysis of multi-wavelength classification parameters (mid-band fit, slope, intercept) obtained from the PA signal spectrum generated in the LNs; and compare QPA performance with our established quantitative ultrasound (QUS) techniques in distinguishing metastatic from non-cancerous tissue in dissected LNs. QPA-QUS methods offer a novel general means of tissue typing and evaluation in a broad range of disease-assessment applications, e.g., cardiac, intravascular

  5. Processing and characterization of zeta-Ta4C 3-x: A high toughness tantalum carbide

    NASA Astrophysics Data System (ADS)

    Sygnatowicz, Michael M.

    Tantalum carbides are commonly processed by hot-pressing, canned hot-isostatic-pressing, or spark-plasma sintering because of their high melting temperatures and low diffusivities. This study reports processing of dense ζ-Ta4C 3-x by reaction sintering of a Ta and TaC powder mixture (C/Ta atomic ratio = 0.66). ζ-Ta4C3-x is of interest due to its rhombohedral (trigonal) crystal structure that may be characterized as a polytype with both face-centered-cubic (fcc) and hexagonal-close-packed (hcp) Ta stacking sequences interrupted by stacking faults and missing carbon layers. This structure leads to easy cleaving on the basal planes and high fracture toughness. A key step in processing is the hydrogenation of the Ta powder to produce beta-TaH x, a hard and brittle phase that enables efficient comminution during milling and production of small, equiaxed Ta particles that can be packed to high green density with the TaC powder. Studies of phase evolution by quantitative X-ray diffraction during sintering revealed several intermediate reactions: (a) decomposition of beta-TaHx to Ta, (b) diffusion of C from gamma-TaC to Ta leading to the formation of α-Ta2Cy' with the kinetics described by the Johnson-Mehl-Avrami-Kolmogorov (JMAK) equation with an exponent, n = 0.5, and an activation energy of 221 kJ/mole, (c) equilibration of α-Ta2Cy' and gamma-TaC 0.78 phases, and (d) formation of ζ-Ta4C2.56 from the equilibrated α-Ta2C and gamma-TaC0.78 phases with the kinetics characterized by a higher JMAK exponent ( n ≈ 3) and higher activation energy (1089 kJ/mole). The microstructure showed evidence of nucleation and growth of the ζ-Ta4C 2.56 phase in both the α-Ta2C and gamma-TaC0.78 parent phases with distinct difference in the morphology due to the different number of variants of the habit plane. A hot-pressed and hot-isostatic-pressed (HIPed) material (C/Ta atomic ratio = 0.66), having formed 95 w% ζ-phase, attained a fracture toughness of 15.6 +/- 0.5 MPa√m and a

  6. Running Geant on T. Node parallel computer

    SciTech Connect

    Jejcic, A.; Maillard, J.; Silva, J. ); Mignot, B. )

    1990-08-01

    AnInmos transputer-based computer has been utilized to overcome the difficulties due to the limitations on the processing abilities of event parallelism and multiprocessor farms (i.e., the so called bus-crisis) and the concern regarding the growing sizes of databases typical in High Energy Physics. This study was done on the T.Node parallel computer manufactured by TELMAT. Detailed figures are reported concerning the event parallelization. (AIP)

  7. Vulnerability of critical infrastructures : identifying critical nodes.

    SciTech Connect

    Cox, Roger Gary; Robinson, David Gerald

    2004-06-01

    The objective of this research was the development of tools and techniques for the identification of critical nodes within critical infrastructures. These are nodes that, if disrupted through natural events or terrorist action, would cause the most widespread, immediate damage. This research focuses on one particular element of the national infrastructure: the bulk power system. Through the identification of critical elements and the quantification of the consequences of their failure, site-specific vulnerability analyses can be focused at those locations where additional security measures could be effectively implemented. In particular, with appropriate sizing and placement within the grid, distributed generation in the form of regional power parks may reduce or even prevent the impact of widespread network power outages. Even without additional security measures, increased awareness of sensitive power grid locations can provide a basis for more effective national, state and local emergency planning. A number of methods for identifying critical nodes were investigated: small-world (or network theory), polyhedral dynamics, and an artificial intelligence-based search method - particle swarm optimization. PSO was found to be the only viable approach and was applied to a variety of industry accepted test networks to validate the ability of the approach to identify sets of critical nodes. The approach was coded in a software package called Buzzard and integrated with a traditional power flow code. A number of industry accepted test networks were employed to validate the approach. The techniques (and software) are not unique to power grid network, but could be applied to a variety of complex, interacting infrastructures.

  8. Scheduling applications for execution on a plurality of compute nodes of a parallel computer to manage temperature of the nodes during execution

    DOEpatents

    Archer, Charles J; Blocksome, Michael A; Peters, Amanda E; Ratterman, Joseph D; Smith, Brian E

    2012-10-16

    Methods, apparatus, and products are disclosed for scheduling applications for execution on a plurality of compute nodes of a parallel computer to manage temperature of the plurality of compute nodes during execution that include: identifying one or more applications for execution on the plurality of compute nodes; creating a plurality of physically discontiguous node partitions in dependence upon temperature characteristics for the compute nodes and a physical topology for the compute nodes, each discontiguous node partition specifying a collection of physically adjacent compute nodes; and assigning, for each application, that application to one or more of the discontiguous node partitions for execution on the compute nodes specified by the assigned discontiguous node partitions.

  9. Characterization of strain in sub-100 nm silicon transistors by convergent-beam electron diffraction

    NASA Astrophysics Data System (ADS)

    Zhang, Peng

    As silicon devices shrink further beyond the 65 nm technology node, strain is increasingly important for the fabrication and operation of nano-devices. According to the latest International Technology Roadmap for Semiconductors, however, the detection and mapping of strain at the required nanometer spatial resolution has yet to be achieved. The project is to evaluate the convergent-beam electron diffraction (CBED) technique in a transmission electron microscope (TEM) as a nanoscale strain metrology. In this work, by using energy-filtered CBED under scanning TEM (STEM) mode, we have successfully measured strain in two types of sub-100 nm semiconductor structures: 90 nm node and 65 nm node shallow trench isolation (STI) structures, and a 65 nm node locally strained p-type metal-oxide semiconductor field-effect transistor (P-MOSFET, or PMOS) featuring SiGe source and drain (S/D). In the 90 nm STI structures, the strain is generally less than 0.1%. Nevertheless, CBED is sensitive enough to tell the strain difference in two 90 nm STI structures with different oxide trench filling conditions. In the 65 nm STI structure, the strain tensors at different positions around the oxide trench filling are measured. The experimental results are compared with finite element modeling based on isotropic elasticity theory. A large discrepancy is found between experiments and simulation, which suggests that a more sophisticated model is necessary for accurate modeling, and more importantly that CBED strain measurements can be used to check the applicability of models at nanometer scale. In the 65 nm node uniaxially strained PMOS, the lattice parameters of silicon at a distance of 25 nm to 55nm below the gate are measured. It is found that at 25 below the gate, the major stress component, 1.1 GPa, is compressive along the source-drain axis. It is also noticed that in the strained silicon area, all three diagonal components of the strain tensor are compressive. Thus the CBED strain

  10. Plasma immersion ion implantation for sub-22 nm node devices: FD-SOI and Tri-Gate

    SciTech Connect

    Duchaine, J.; Milesi, F.; Coquand, R.; Barraud, S.; Reboh, S.; Gonzatti, F.; Mazen, F.; Torregrosa, Frank

    2012-11-06

    Here, we present and discuss the electrical characteristics of fully depleted MOSFET transistors of planar and tridimensional architecture, doped by Plasma Immersion Ion Implantation (PIII) or Beam Line Ion Implantation (BLII). Both techniques delivered similar and satisfactory results in considering the planar architecture. For tri-dimensional Tri-Gate transistors, the results obtained with PIII are superior.

  11. Enabling the 22nm node via grazing incidence collectors integrated into the DPP source for EUVL HVM

    NASA Astrophysics Data System (ADS)

    Bianucci, G.; Bragheri, A.; Cassol, G. L.; Ghislanzoni, R.; Mazzoleni, R.; Zocchi, F. E.

    2011-04-01

    Media Lario Technologies (MLT) has enabled the Extreme Ultraviolet Lithography (EUVL) roadmap with its grazing incidence collectors installed in all DPP sources since 2006. Furthermore, with several 100 WIF capable production grazing incidence collectors shipped in 2010, MLT is ready to support the start of High Volume Manufacturing (HVM). With a point-source collection efficiency of 25% and 6 kW power loading capability, the 9-shell collector design is capable of delivering 100 W in-band EUV power through the intermediate focus aperture. The customized reflective layer and the debris mitigation technology enable the 1-year lifetime objective under full production operating conditions. Integration of the grazing incidence collector in XTREME technologies' (XT) DPP source attached to ASML's NXE:3100 scanner has provided initial validation of the optical, thermal, and lifetime design objectives. In full HVM regime, we anticipate that the collector power loading will progressively reach 20 kW to enable 500 W inband EUV peak power at intermediate focus. We have started the development of a thermal management design maintaining the current optical stability with a collector power loading of 30 kW, thus meeting the aggressive HVM requirements.

  12. Improving spanning trees by upgrading nodes

    SciTech Connect

    Krumke, S.O.; Noltemeier, H.; Wirth, H.C.

    1997-01-16

    We study budget constrained optimal network upgrading problems. Such problems aim at finding optimal strategies for improving a network under some cost measure subject to certain budget constraints. A general problem in this setting is the following. We are given an edge weighted graph G = (V, E) where nodes represent processors and edges represent bidirectional communication links. The processor at a node v {element_of} V can be upgraded at a cost of c(v). Such an upgrade reduces the delay of each link emanating from v. The goal is to find a minimum cost set of nodes to be upgraded so that the resulting network has the best performance with respect to some measure. We consider the problem under two measures, namely, the weight of a minimum spanning tree and the bottleneck weight of a minimum bottleneck spanning tree. We present approximation and hardness results for the problem. Our results are tight to within constant factors. We also show that these approximation algorithms can be used to construct good approximation algorithms for the dual versions of the problems where there is a budget constraint on the upgrading cost and the objectives are minimum weight spanning tree and minimum bottleneck weight spanning tree respectively.

  13. Spaceport aurora: An orbiting transportation node

    NASA Technical Reports Server (NTRS)

    1990-01-01

    With recent announcements of the development of permanently staffed facilities on the Moon and Mars, the national space plan is in need of an infrastructure system for transportation and maintenance. A project team at the University of Houston College of Architecture and the Sasakawa International Center for Space Architecture, recently examined components for a low Earth orbit (LEO) transportation node that supports a lunar build-up scenario. Areas of investigation included identifying transportation node functions, identifying existing space systems and subsystems, analyzing variable orbits, determining logistics strategies for maintenance, and investigating assured crew return systems. The information resulted in a requirements definition document, from which the team then addressed conceptual designs for a LEO transportation node. The primary design drivers included: orbital stability, maximizing human performance and safety, vehicle maintainability, and modularity within existing space infrastructure. For orbital stability, the power tower configuration provides a gravity gradient stabilized facility and serves as the backbone for the various facility components. To maximize human performance, human comfort is stressed through zoning of living and working activities, maintaining a consistent local vertical orientation, providing crew interaction and viewing areas and providing crew return vehicles. Vehicle maintainability is accomplished through dual hangars, dual work cupolas, work modules, telerobotics and a fuel depot. Modularity is incorporated using Space Station Freedom module diameter, Space Station Freedom standard racks, and interchangeable interior partitions. It is intended that the final design be flexible and adaptable to provide a facility prototype that can service multiple mission profiles using modular space systems.

  14. The Charles Perkins Centre's Twins Research Node.

    PubMed

    Ferreira, Lucas C; Craig, Jeffrey M; Hopper, John L; Carrick, Susan E

    2016-08-01

    Twins can help researchers disentangle the roles of genes from those of the environment on human traits, health, and diseases. To realize this potential, the Australian Twin Registry (ATR), University of Melbourne, and the Charles Perkins Centre (CPC), University of Sydney, established a collaboration to form the Twins Research Node, a highly interconnected research facility dedicated specifically to research involving twins. This collaboration aims to foster the adoption of twin designs as important tools for research in a range of health-related domains. The CPC hosted their Twins Research Node's launch seminar entitled 'Double the power of your research with twin studies', in which experienced twin researchers described how twin studies are supporting scientific discoveries and careers. The launch also featured twin pairs who have actively participated in research through the ATR. Researchers at the CPC were surveyed before the event to gauge their level of understanding and interest in utilizing twin research. This article describes the new Twins Research Node, discusses the survey's main results and reports on the launch seminar. PMID:27302367

  15. Simplified Dynamic Analysis of Grinders Spindle Node

    NASA Astrophysics Data System (ADS)

    Demec, Peter

    2014-12-01

    The contribution deals with the simplified dynamic analysis of surface grinding machine spindle node. Dynamic analysis is based on the use of the transfer matrix method, which is essentially a matrix form of method of initial parameters. The advantage of the described method, despite the seemingly complex mathematical apparatus, is primarily, that it does not require for solve the problem of costly commercial software using finite element method. All calculations can be made for example in MS Excel, which is advantageous especially in the initial stages of constructing of spindle node for the rapid assessment of the suitability its design. After detailing the entire structure of spindle node is then also necessary to perform the refined dynamic analysis in the environment of FEM, which it requires the necessary skills and experience and it is therefore economically difficult. This work was developed within grant project KEGA No. 023TUKE-4/2012 Creation of a comprehensive educational - teaching material for the article Production technique using a combination of traditional and modern information technology and e-learning.

  16. Evaluating the importance of nodes in complex networks

    NASA Astrophysics Data System (ADS)

    Liu, Jun; Xiong, Qingyu; Shi, Weiren; Shi, Xin; Wang, Kai

    2016-06-01

    Evaluating the importance of nodes for complex networks is of great significance to the research of survivability and robusticity of networks. This paper proposes an effective ranking method based on degree value and the importance of lines. It can well identify the importance of bridge nodes with lower computational complexity. Firstly, the properties of nodes that are connected to a line are used to compute the importance of the line. Then, the contribution of nodes to the importance of lines is calculated. Finally, degree of nodes and the contribution of nodes to the importance of lines are considered to rank the importance of nodes. Five real networks are used as test data. The experimental results show that our method can effectively evaluate the importance of nodes for complex networks.

  17. Analysis of complex network performance and heuristic node removal strategies

    NASA Astrophysics Data System (ADS)

    Jahanpour, Ehsan; Chen, Xin

    2013-12-01

    Removing important nodes from complex networks is a great challenge in fighting against criminal organizations and preventing disease outbreaks. Six network performance metrics, including four new metrics, are applied to quantify networks' diffusion speed, diffusion scale, homogeneity, and diameter. In order to efficiently identify nodes whose removal maximally destroys a network, i.e., minimizes network performance, ten structured heuristic node removal strategies are designed using different node centrality metrics including degree, betweenness, reciprocal closeness, complement-derived closeness, and eigenvector centrality. These strategies are applied to remove nodes from the September 11, 2001 hijackers' network, and their performance are compared to that of a random strategy, which removes randomly selected nodes, and the locally optimal solution (LOS), which removes nodes to minimize network performance at each step. The computational complexity of the 11 strategies and LOS is also analyzed. Results show that the node removal strategies using degree and betweenness centralities are more efficient than other strategies.

  18. Symptomatic intravertebral disc herniation (Schmorl's node) in the cervical spine.

    PubMed Central

    Lipson, S J; Fox, D A; Sosman, J L

    1985-01-01

    A case of a Schmorl's node in the cervical vertebra causing neck pain is reported. An inflammatory focus was found on histological examination of Schmorl's node indicating a possible mechanism of pain production. Images PMID:4083942

  19. Early detection of cognitive deficits in the 3xTg-AD mouse model of Alzheimer's disease.

    PubMed

    Stover, Kurt R; Campbell, Mackenzie A; Van Winssen, Christine M; Brown, Richard E

    2015-08-01

    Which behavioral test is the most sensitive for detecting cognitive deficits in the 3xTg-AD at 6.5 months of age? The 3xTg-AD mouse model of Alzheimer's disease (AD) has three transgenes (APPswe, PS1M146V, and Tau P301L) which cause the development of amyloid beta plaques, neurofibrillary tangles, and cognitive deficits with age. In order to determine which task is the most sensitive in the early detection of cognitive deficits, we compared male and female 3xTg-AD and B6129SF2 wildtype mice at 6.5 months of age on a test battery including spontaneous alternation in the Y-Maze, novel object recognition, spatial memory in the Barnes maze, and cued and contextual fear conditioning. The 3xTg-AD mice had impaired learning and memory in the Barnes maze but performed better than B6129SF2 wildtype mice in the Y-Maze and in contextual fear conditioning. Neither genotype demonstrated a preference in the novel object recognition task nor was there a genotype difference in cued fear conditioning but females performed better than males. From our results we conclude that the 3xTg-AD mice have mild cognitive deficits in spatial learning and memory and that the Barnes maze was the most sensitive test for detecting these cognitive deficits in 6.5-month-old mice. PMID:25896362

  20. Ultra-broadband Nonlinear Saturable Absorption for Two-dimensional Bi2TexSe3-x Nanosheets.

    PubMed

    Wang, Yingwei; Liu, Sheng; Yuan, Jian; Wang, Peng; Chen, Jiazhang; Li, Jianbo; Xiao, Si; Bao, Qiaoliang; Gao, Yongli; He, Jun

    2016-01-01

    We report the ultra-broadband nonlinear optical (NLO) response of Bi2TexSe3-x nanosheets produced by a facile solvothermal method. Our result show that the extracted basic optical nonlinearity parameters of Bi2TexSe3-x nanosheets, αNL, Imχ((3)), and FOM reach ~10(4) cm/GW, ~10(-8) esu and ~10(-13) esu cm, respectively, which are several orders of magnitude larger than those of bulk dielectrics. We further observed the excitation intensity dependence of the NLO absorption coefficient and the NLO response sensitivity. The mechanisms of those phenomena were proposed based on physical model. The wavelength dependence of the NLO response of Bi2TexSe3-x nanosheets was investigated, and we determined that the Bi2TexSe3-x nanosheets possess an ultra-broadband nonlinear saturable absorption property covering a range from the visible to the near-infrared band, with the NLO absorption insensitive to the excitation wavelength. This work provide fundamental and systematic insight into the NLO response of Bi2TexSe3-x nanosheets and support their application in photonic devices in the future. PMID:27609149

  1. Comparison of older adults' steps per day using NL-1000 pedometer and two GT3X+ accelerometer filters.

    PubMed

    Barreira, Tiago V; Brouillette, Robert M; Foil, Heather C; Keller, Jeffrey N; Tudor-Locke, Catrine

    2013-10-01

    The purpose of this study was to compare the steps/d derived from the ActiGraph GT3X+ using the manufacturer's default filter (DF) and low-frequency-extension filter (LFX) with those from the NL-1000 pedometer in an older adult sample. Fifteen older adults (61-82 yr) wore a GT3X+ (24 hr/day) and an NL-1000 (waking hours) for 7 d. Day was the unit of analysis (n = 86 valid days) comparing (a) GT3X+ DF and NL-1000 steps/d and (b) GT3X+ LFX and NL-1000 steps/d. DF was highly correlated with NL-1000 (r = .80), but there was a significant mean difference (-769 steps/d). LFX and NL-1000 were highly correlated (r = .90), but there also was a significant mean difference (8,140 steps/d). Percent difference and absolute percent difference between DF and NL-1000 were -7.4% and 16.0%, respectively, and for LFX and NL-1000 both were 121.9%. Regardless of filter used, GT3X+ did not provide comparable pedometer estimates of steps/d in this older adult sample. PMID:23170752

  2. Implementation of contact hole patterning performance with KrF resist flow process for 80nm DRAM application

    NASA Astrophysics Data System (ADS)

    Kim, Hyoung-ryeun; Park, DongHeok; Kim, HyeongSoo

    2005-05-01

    Currently, 193nm lithography including contact hole patterning is being integrated into manufacturable process at 80nm technology nodes. However, for 193nm contact hole patterning, many researchers have reported various troubles such as poor profiles, low exposure dose, and pattern edge roughness due to inherent flaws of ArF resist materials. Also, it is desirable to be extended the KrF lithography at a cost. Of course, the patterning of very small contact hole features for the 80nm DRAM device generation will be a difficult challenge for 248nm lithography. In this work, we study the potential for contact photoresist reflow to be used with 248nm photoresist to increase process windows of small contact dimensions at the 80nm DRAM device generation. In KrF 0.80NA scanner, resist flow process and layout optimization was carried out to achieve the contact hole patterning. The contact CD at best focus is 140nm and the amount of photoresist flow is approximately 52nm. For a contact hole with CDs of 88nm +/- 10%, Focus-Exposure windows over the wafer are 0.3um and 10%, respectively. In conclusion, we have successfully achieved the contact hole patterning with KrF resist flow process for 80nm DRAM device.

  3. Magnetic and thermoelectric properties of Fe3-xCoxO4 thin films and CoFe2O4/Fe3O4 superlattices

    NASA Astrophysics Data System (ADS)

    Nguyen van, Quang; Christian, Meny; Duong, Anh Tuan; Shin, Yooleemi; S. H, Rhim; Nguyen Thi, Minh Hai; Cho, Sunglae

    2015-03-01

    Microcrystalline ferrites are used as a medium for the magnetic recording and storage of information. Magnetite, Fe3O4, is a ferrimagnet with a cubic inverse spinel structure and exhibits a metal-insulator, Verwey, transition at about 120 K. It is predicted to possess as half-metallic nature, ~ 100% spin polarization, and high TC (850 K). Cobalt ferrite, Co3O4, is one of the most important members of the ferrite family, which is characterized by its high HC, moderate magnetization and very high magnetocrystalline anisotropy. Here we report on the magnetic and thermoelectric properties of Fe3-xCoxO4 (x = 0 to 1) thin films and CoFe2O4/Fe3O4 superlattices grown on MgO (100) by MBE. XRD and RHEED patterns confirmed the inverse spinel structure of the Fe3O4 films. Magnetic properties of the Fe3-xCoxO4 films are markedly sensitive to the Co content. The Verwey transition was disappeared in Co-doped films. A negative MR curve with butterfly shape was observed with low Co content but disappeared for the samples with x = 0.8 and 1. Seebeck coefficients increased with Co concentration; -70 μV/K for x =0 and -220 μV/K for x =1. We will also discuss on the relationship between magnetic and thermoelectric characteristics in CoFe2O4/Fe3O4 superlattices with the modulations of 5, 10, and 20 nm.

  4. Mask process monitoring with optical CD measurements for sub-50-nm

    NASA Astrophysics Data System (ADS)

    Bang, Kyung-Yoon; Park, Jin-Back; Roh, Jeong-Hun; Chung, Dong-Hoon; Cho, Sung-Yong; Kim, Yong-Hoon; Woo, Sang-Gyun; Cho, Han-Ku

    2008-10-01

    Process control of line width and etch depth on the photomask production is more important as the industry moves toward 50nm node and beyond. In this paper, we report the ellipsometer-based scatterometry based metrology system that provides line width and resist thickness measurements on sub 50 nm node test masks for a mask process monitoring. Measurements were made with spectroscopic rotating compensator ellipsometer system. For analysis we made up modeling libraries with a 200 nm half pitch and checked and applied them to ADI and ACI measurements of binary and phase shift mask (PSM). We characterized the CD uniformity, linearity, thickness uniformity. Results show that linearity measured from fixed-pitch, varying line/space ratio targets show good correlation to top-down CD-SEM with R2 of more than 0.99. Resist thickness results show that depth bias is about 2nm between AFM and OCD in ADI step. The data show that optical CD measurements provide a nondestructive way to monitor mask processes with relatively little time loss from measurement step.

  5. Lithography process for KrF in the sub-0.11 μm node

    NASA Astrophysics Data System (ADS)

    Yuhang, Zhao; Jun, Zhu; Jiarong, Tong; Xuan, Zeng

    2009-09-01

    Currently, 200 mm wafer foundry companies are beginning to explore production feasibility under ground rules smaller than 0.11 μm while maintain the cost advantages of KrF exposure tool systems. The k1 factor under 0.11 μm at 248 nm illumination will be below 0.35, which means the process complexity is comparable with 65 nm at 193 nm illumination. In this paper, we present our initial study in the CD process window, mask error factor and CD through pitch performance at the 0.09 μm ground rule for three critical layers—gate poly, metal and contact. The wafer data in the process window and optical proximity will be analyzed. Based on the result, it is shown that the KrF tool is fully capable of sub 0.11 μm node mass production.

  6. Superconductivity and Charge Density Wave in ZrTe3-xSex.

    PubMed

    Zhu, Xiangde; Ning, Wei; Li, Lijun; Ling, Langsheng; Zhang, Ranran; Zhang, Jinglei; Wang, Kefeng; Liu, Yu; Pi, Li; Ma, Yongchang; Du, Haifeng; Tian, Minglian; Sun, Yuping; Petrovic, Cedomir; Zhang, Yuheng

    2016-01-01

    Charge density wave (CDW), the periodic modulation of the electronic charge density, will open a gap on the Fermi surface that commonly leads to decreased or vanishing conductivity. On the other hand superconductivity, a commonly believed competing order, features a Fermi surface gap that results in infinite conductivity. Here we report that superconductivity emerges upon Se doping in CDW conductor ZrTe3 when the long range CDW order is gradually suppressed. Superconducting critical temperature Tc(x) in ZrTe3-xSex (0 ≤ x ≤ 0.1) increases up to 4 K plateau for 0.04 ≤ x ≤ 0.07. Further increase in Se content results in diminishing Tc and filametary superconductivity. The CDW modes from Raman spectra are observed in x = 0.04 and 0.1 crystals, where signature of ZrTe3 CDW order in resistivity vanishes. The electronic-scattering for high Tc crystals is dominated by local CDW fluctuations at high temperatures, the resistivity is linear up to highest measured T = 300 K and contributes to substantial in-plane anisotropy. PMID:27253150

  7. Electronic structures and geometries of the XF{sub 3} (X = Cl, Br, I, At) fluorides

    SciTech Connect

    Sergentu, Dumitru-Claudiu; Amaouch, Mohamed; Pilmé, Julien; Galland, Nicolas; Maurice, Rémi

    2015-09-21

    The potential energy surfaces of the group 17 XF{sub 3} (X = Cl, Br, I, At) fluorides have been investigated for the first time with multiconfigurational wave function theory approaches. In agreement with experiment, bent T-shaped C{sub 2v} structures are computed for ClF{sub 3}, BrF{sub 3}, and IF{sub 3}, while we predict that an average D{sub 3h} structure would be experimentally observed for AtF{sub 3}. Electron correlation and scalar relativistic effects strongly reduce the energy difference between the D{sub 3h} geometry and the C{sub 2v} one, along the XF{sub 3} series, and in the X = At case, spin-orbit coupling also slightly reduces this energy difference. AtF{sub 3} is a borderline system where the D{sub 3h} structure becomes a minimum, i.e., the pseudo-Jahn-Teller effect is inhibited since electron correlation and scalar-relativistic effects create small energy barriers leading to the global C{sub 2v} minima, although both types of effects interfere.

  8. Translation equations to compare ActiGraph GT3X and Actical accelerometers activity counts

    PubMed Central

    2012-01-01

    Background This study aimed to develop a translation equation to enable comparison between Actical and ActiGraph GT3X accelerometer counts recorded minute by minute. Methods Five males and five females of variable height, weight, body mass index and age participated in this investigation. Participants simultaneously wore an Actical and an ActiGraph accelerometer for two days. Conversion algorithms and R2 were calculated day by day for each subject between the omnidirectional Actical and three different ActiGraph (three-dimensional) outputs: 1) vertical direction, 2) combined vector, and 3) a custom vector. Three conversion algorithms suitable for minute/minute conversions were then calculated from the full data set. Results The vertical ActiGraph activity counts demonstrated the closest relationship with the Actical, with consistent moderate to strong conversions using the algorithm: y = 0.905x, in the day by day data (R2 range: 0.514 to 0.989 and average: 0.822) and full data set (R2 = 0.865). Conclusions The Actical is most sensitive to accelerations in the vertical direction, and does not closely correlate with three-dimensional ActiGraph output. Minute by minute conversions between the Actical and ActiGraph vertical component can be confidently performed between data sets and might allow further synthesis of information between studies. PMID:22520344

  9. Microstructure and Magnetoresistance of CaCuxMn3-xMn4O12

    NASA Astrophysics Data System (ADS)

    Cao, H.; Tan, W. S.; Xu, G. J.; Wu, H. P.; Deng, K. M.; Wu, X. S.

    In this article, the precursors of CaCuxMn3-xMn4O12 (x = 0.2, 0.4, 0.6, 0.8, 1.0, 1.2, 1.4) were synthesized using wet-chemistry technique, and then samples were sintered in pure oxygen flow at 850°C and ambient pressure with KCl 10 wt% addition. The Rietveld refinements of powder X-ray diffraction patterns showed that all the samples were single phase with cubic symmetry, the space group Imbar {3}. The lattice parameters a decreased with increasing Cu doping level x. The transport properties were characterized with DC four-probe technique. The results indicated that the crystal structure of samples were deformed and then influenced the transport properties of these manganese oxides. The MR ratios at 85 K and in the magnetic field of 5 Tesla increased with increasing x and reached the maximum at x = 1.0, then decreased with further increasing x. These results originated maybe from the intergrain tunneling of spin-polarized carriers and double-exchange effect.

  10. Spin glass behavior in the weberite related structure Dy3-xYxTaO7

    NASA Astrophysics Data System (ADS)

    Gomez Garcia, Jose; Tavizon, Gustavo; Duran, Alejandro; Escudero, Roberto

    2013-03-01

    Crystalline structures with tetrahedral arrangement of magnetic cations are susceptible to present non-collinear magnetism. Dy3TaO7 with weberite-type crystal structure has this arrangement and could display non-conventional magnetic coupling. Previous magnetic studies on Dy3TaO7 have characterized this as an antiferromagnetic system with TN of about 3 K. In this work magnetic properties of polycrystalline samples of the Dy3-xYxTaO7, with weberite structure are presented. X-Ray diffraction of our samples are single phase in all range of compositions. Magnetic properties measured from 2 - 300 K shown a typical Curie-Weiss behavior with the Dy3+ effective magnetic moment about 10.35 μB. The compositions x =0.66, 0.33, and 0.0 display a maximum in the susceptibility vs. temperature at 2.3, 2.7, and 3 K respectively. This behavior has been previously assigned to an antiferromagnetic transition; however our AC magnetic measurements as a function of frequency indicate a spin glass behavior. Since magnetic cations have tetrahedral arrangement for x =0, a magnetic frustrated state is anticipated for this composition.

  11. Formability of ABX3 (X = F, Cl, Br, I) halide perovskites.

    PubMed

    Li, Chonghea; Lu, Xionggang; Ding, Weizhong; Feng, Liming; Gao, Yonghui; Guo, Ziming

    2008-12-01

    In this study a total of 186 complex halide systems were collected; the formabilities of ABX3 (X = F, Cl, Br and I) halide perovskites were investigated using the empirical structure map, which was constructed by Goldschmidt's tolerance factor and the octahedral factor. A model for halide perovskite formability was built up. In this model obtained, for all 186 complex halides systems, only one system (CsF-MnF2) without perovskite structure and six systems (RbF-PbF2, CsF-BeF2, KCl-FeCl2, TlI-MnI2, RbI-SnI2, TlI-PbI2) with perovskite structure were wrongly classified, so its predicting accuracy reaches 96%. It is also indicated that both the tolerance factor and the octahedral factor are a necessary but not sufficient condition for ABX3 halide perovskite formability, and a lowest limit of the octahedral factor exists for halide perovskite formation. This result is consistent with our previous report for ABO3 oxide perovskite, and may be helpful to design novel halide materials with the perovskite structure. PMID:19029699

  12. Calibration of digital SLR Nikon D3X for the use in digital photogrammetry projects

    NASA Astrophysics Data System (ADS)

    Kraszewski, B.

    2012-06-01

    Results of research on calibration of high-resolution digital camera Nikon D3X have been presented. CMOS matrix stability in recording process of digital images, calculation of principle distance as well as principal point, radial distortion and tangential distortion were determined. The interior orientation parameters determined during calibration in test project were examined. All test images were obtained using three replaceable Nikkor lens of 24, 35 and 50 mm focal length. The calibration process was executed in Camera Calibration and Field Calibration modules of PhotoModeler software using convergent terrestrial images. It was also executed for single photo in DLT module of AeroSys software. For the determination of interior orientation parameters of digital camera for each lens the 2D and 3D test fields were used. Stability and repeatability of recorded digital images on CMOS matrix were examined on 25 control points which were evenly distributed on a white calibration table. Accuracy of pixel position on the image for 24 mm, 35 mm and 50 mm focal length was 0.06, 0.08 and 0.04 of image pixel, respectively. It was found that interior orientation parameters calculated using the PhotoModeler software for both calibration methods were correctly determined while when using the Aerosys software they were determined with lower accuracy. The very high accuracy of elaboration of a test photogrammetric project for each camera lens was obtained using interior orientation parameters calculated on the basis of convergent images and 3D field.

  13. Long 3 x 8 hr dialysis: a three-decade summary.

    PubMed

    Charra, Bernard; Chazot, Charles; Jean, Guillaume; Hurot, Jean-Marc; Vanel, Thierry; Terrat, Jean-Claude; VoVan, Cyril

    2003-01-01

    A long hemodialysis (HD), 3 x 8 hours/week, has been used without significant modification in Tassin for 35 years with excellent morbidity and mortality results. It can be performed during the day or overnight. The relatively good survival is mainly due to a lower cardiovascular mortality than usually reported in dialysis patients. This in turn is mainly due to the good control of blood pressure (BP) including drug-free hypertension control and low incidence of intradialytic hypotension. This control of BP is probably the result of the tight extracellular volume normalization (dry weight), although one cannot exclude the effect of other factors such as serum phosphorus control well achieved using long dialysis. The high dose of small and even more of middle molecules is another essential virtue of long dialysis, leading to good nutrition, correction of anemia, control of serum phosphate and potassium with low doses of medications and providing a very cost-effective treatment. In 2002 one must aim at optimal rather than just adequate dialysis. Optimal dialysis needs to correct as perfectly as possible each and every abnormality due to renal failure. It can be achieved using longer (or more frequent) sessions. Overnight dialysis is the most logical way of implementing long HD with the lowest possible hindrance on patient's life. Due to the change in case mix a decreasing number of patients are able or willing to go on overnight dialysis, education to be autonomous is more difficult, but the benefit is still there. PMID:14733303

  14. Ultrastructural findings in lymph nodes from pigs suffering from naturally occurring postweaning multisystemic wasting syndrome.

    PubMed

    Rodriguez-Cariño, C; Segalés, J

    2009-07-01

    The aims of this study were to evaluate ultrastructural lesions in lymph nodes from postweaning multisystemic wasting syndrome (PMWS)-affected pigs and to correlate these alterations with detection of viral-like particles (VLPs). Samples of lymph nodes were taken from 4 PMWS-affected pigs and 2 healthy animals and processed by transmission electron microscopy. Significant ultrastructural alterations were only noted in PMWS-affected pigs, mainly in histiocytes and rarely in other cell types. Histiocytes showed severe swelling and proliferation of mitochondria, and proliferation and dilation of rough endoplasmic reticulum and Golgi complex. Infected histiocytes contained large numbers of intracytoplasmic inclusion (ICI) bodies with VLPs; some histiocytes also had intranuclear inclusions (INIs). Small inclusions were surrounded by double membrane, with a granular appearance or containing paracrystalline arrays; icosahedral VLPs were 8-17 nm in diameter. Large ICIs were double-membrane bounded or not and contained VLPs usually forming paracrystalline arrays. ICIs were often found next to mitochondria with severe swelling, and also inside them. INIs were not surrounded by membranes and contained virions of 10-13 nm diameter. Lymphocyte depletion was a striking finding of lymph nodes from PMWS-affected pigs. The inclusion bodies containing VLPs referred to in the present study should be classified as viral factories, suggesting that viral replication is probably a frequent event in macrophages, in which mitochondria might play a role. PMID:19276043

  15. Zn-Site Determination in Protein Encapsulated ZnxFe3-xO4 Nanoparticles

    SciTech Connect

    Pool, V. L.; Klem, M. T.; Holroyd, J.; Harris, T.; Arenholz, E.; Young, M.; Douglas, T.; Idzerda, Y. U.

    2008-10-01

    The X-ray absorption spectra of the Fe and Zn L-edges for 6.7 nm Fe{sub 3}O{sub 4} nanoparticles grown inside 12 nm ferritin protein cages with 10%, 15%, 20% and 33% zinc doping, shows that the Zn is substitutional as Zn{sup 2+} within the iron oxide host structure. A Neel-Arrhenius plot of the blocking temperature in the frequency dependent ac-susceptibility measurements show that the particles are non-interacting and that the anisotropy energy barrier is reduced with Zn loading. X-ray magnetic circular dichroism (XMCD) of the Fe displays a linear decrease with Zn-doping in sharp contrast to the initial increase present in the bulk system. The most plausible explanation for the moment decrease is that Zn substitutes preferentially into the tetrahedral A-site as a Zn{sup 2+} cation, generating a mixed spinel.

  16. Identifying node role in social network based on multiple indicators.

    PubMed

    Huang, Shaobin; Lv, Tianyang; Zhang, Xizhe; Yang, Yange; Zheng, Weimin; Wen, Chao

    2014-01-01

    It is a classic topic of social network analysis to evaluate the importance of nodes and identify the node that takes on the role of core or bridge in a network. Because a single indicator is not sufficient to analyze multiple characteristics of a node, it is a natural solution to apply multiple indicators that should be selected carefully. An intuitive idea is to select some indicators with weak correlations to efficiently assess different characteristics of a node. However, this paper shows that it is much better to select the indicators with strong correlations. Because indicator correlation is based on the statistical analysis of a large number of nodes, the particularity of an important node will be outlined if its indicator relationship doesn't comply with the statistical correlation. Therefore, the paper selects the multiple indicators including degree, ego-betweenness centrality and eigenvector centrality to evaluate the importance and the role of a node. The importance of a node is equal to the normalized sum of its three indicators. A candidate for core or bridge is selected from the great degree nodes or the nodes with great ego-betweenness centrality respectively. Then, the role of a candidate is determined according to the difference between its indicators' relationship with the statistical correlation of the overall network. Based on 18 real networks and 3 kinds of model networks, the experimental results show that the proposed methods perform quite well in evaluating the importance of nodes and in identifying the node role. PMID:25089823

  17. Salmonella in lymph nodes of cattle presented for harvest

    Technology Transfer Automated Retrieval System (TEKTRAN)

    This study was undertaken to determine the prevalence of Salmonella in the subiliac lymph nodes (LN) of cattle. Lymph node samples were obtained from carcasses of cull and feedlot cattle at commercial packing plants. Lymph nodes were trimmed of all fat, surface sterilized by submersion in boiling ...

  18. Diffusion MRI on lymph node staging of gastric adenocarcinoma

    PubMed Central

    Akcakaya, Adem; Memmi, Naim; Turkmen, Ihsan; Cipe, Gokhan; Yildiz, Pelin; Arici, Dilek Sema; Muslumanoglu, Mahmut

    2015-01-01

    Objective The purpose of this study was to evaluate the accuracy of diffusion weighted magnetic resonance imaging (MRI) in preoperative assessment of metastatic lymph nodes of gastric cancer. Methods A total of 23 gastric cancer patients with a mean age of 59.4±10.9 years were analyzed. Lymph nodes were grouped as perigastric lesser curvature (Group Ia), perigastric greater curvature (Group Ib), D1+/D2 lymph nodes (Group II). Identification of histologically metastatic lymph nodes by diffusion weighted MRI was regarded as the main outcome. Results A total of 1,056 lymph nodes including 180 histologically proven metastatic lymph nodes were dissected. Although diffusion weighted MRI could identify the metastatic lymph nodes in 18 out of 23 patients (77.8%), only 69 of total 1,056 nodes (6.53%), either metastatic or non-metastatic, could be detected. There was no correlation between histopathology and diffusion weighted MRI with regard to lymph node groups (P>0.05 for all). Overall accuracy was calculated as 69.56, 65.21 and 52.17 for Groups II, Ib and Ia lymph nodes, respectively. Apparent diffusion coefficient (ADC) values could not be helpful to differentiate metastatic lymph nodes (P=0.673). Conclusions Diffusion weighted MRI has low accuracy to detect or to differentiate metastatic and non-metastatic lymph nodes based on their ADC values in gastric cancer. PMID:26029642

  19. Sentinel node techniques in cancer of the vulva.

    PubMed

    de Hullu, Joanne A; van der Zee, Ate G J

    2003-02-01

    The sentinel lymph node procedure, with the combined technique (preoperative lymphoscintigraphy with (99m)Technetium-labeled Nanocolloid and Patente Blue V ), is a promising staging technique for patients with vulvar cancer. The clinical implementation of the sentinel lymph node procedure and the role of additional histopathologic techniques of the sentinel lymph nodes are under investigation. PMID:12521546

  20. Salmonella prevalence in bovine lymph nodes differs among feedyards

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Lymphatic tissue, specifically lymph nodes, is commonly incorporated into ground beef products as a component of lean trimmings. Salmonella and other pathogenic bacteria have been identified in bovine lymph nodes. Although Salmonella prevalence has been examined among lymph nodes within an animal,...

  1. Identifying Node Role in Social Network Based on Multiple Indicators

    PubMed Central

    Huang, Shaobin; Lv, Tianyang; Zhang, Xizhe; Yang, Yange; Zheng, Weimin; Wen, Chao

    2014-01-01

    It is a classic topic of social network analysis to evaluate the importance of nodes and identify the node that takes on the role of core or bridge in a network. Because a single indicator is not sufficient to analyze multiple characteristics of a node, it is a natural solution to apply multiple indicators that should be selected carefully. An intuitive idea is to select some indicators with weak correlations to efficiently assess different characteristics of a node. However, this paper shows that it is much better to select the indicators with strong correlations. Because indicator correlation is based on the statistical analysis of a large number of nodes, the particularity of an important node will be outlined if its indicator relationship doesn't comply with the statistical correlation. Therefore, the paper selects the multiple indicators including degree, ego-betweenness centrality and eigenvector centrality to evaluate the importance and the role of a node. The importance of a node is equal to the normalized sum of its three indicators. A candidate for core or bridge is selected from the great degree nodes or the nodes with great ego-betweenness centrality respectively. Then, the role of a candidate is determined according to the difference between its indicators' relationship with the statistical correlation of the overall network. Based on 18 real networks and 3 kinds of model networks, the experimental results show that the proposed methods perform quite well in evaluating the importance of nodes and in identifying the node role. PMID:25089823

  2. A sequence of transformations related to the formation of M{sub 3}X{sub 2}-type superstructures

    SciTech Connect

    Gusev, A. I.

    2015-01-15

    A symmetry analysis of monoclinic, orthorhombic, and trigonal M{sub 3}X{sub 2}-type superstructures that can be formed in strongly stoichiometric MX{sub y} compounds with B1 structure is carried out. Channels of order-disorder transitions MX{sub y} → M{sub 3}X{sub 2} are determined. It is shown that, as temperature decreases, two physically admissible sequences of transformations associated with the formation of M{sub 3}X{sub 2} superstructures are possible in nonstoichiometric MX{sub y} compounds of group IV transition metals. By an example of vanadium carbide VC{sub y}, it is demonstrated that orthorhombic or monoclinic V{sub 3}C{sub 2} superstructures can be obtained with the formation of a nanostructure.

  3. In-situ observation of self-regulated switching behavior in WO{sub 3-x} based resistive switching devices

    SciTech Connect

    Hong, D. S.; Wang, W. X.; Chen, Y. S. Sun, J. R.; Shen, B. G.

    2014-09-15

    The transmittance of tungsten oxides can be adjusted by oxygen vacancy (V{sub o}) concentration due to its electrochromic property. Here, we report an in-situ observation of resistive switching phenomenon in the oxygen-deficient WO{sub 3-x} planar devices. Besides directly identifying the formation/rupture of dark-colored conductive filaments in oxide layer, the stripe-like WO{sub 3-x} device demonstrated self-regulated switching behavior during the endurance testing, resulting in highly consistent switching parameters after a stabilizing process. For very high V{sub o}s mobility was demonstrated in the WO{sub 3-x} film by the pulse experiment, we suggested that the electric-field-induced homogeneous migration of V{sub o}s was the physical origin for such unique switching characteristics.

  4. Simultaneous triple 914 nm, 1084 nm, and 1086 nm operation of a diode-pumped Nd:YVO4 laser

    NASA Astrophysics Data System (ADS)

    Lü, Yanfei; Xia, Jing; Liu, Huilong; Pu, Xiaoyun

    2014-10-01

    We report a diode-pumped continuous-wave (cw) triple-wavelength Nd:YVO4 laser operating at 914, 1084, and 1086 nm. A theoretical analysis has been introduced to determine the threshold conditions for simultaneous triple-wavelength laser. Using a T-shaped cavity, we realized an efficient triple-wavelength operation at 4F3/2→4I9/2 and 4F3/2→4I11/2 transitions for Nd:YVO4 crystal, simultaneously. At an absorbed pump power of 16 W (or 25 W of incident pump power), the maximum output power was 2.3 W, which included 914 nm, 1084 nm, and 1086 nm three wavelengths, and the optical conversion efficiency with respect to the absorbed pump power was 14.4%.

  5. Self-Powered, High-Speed and Visible-Near Infrared Response of MoO(3-x)/n-Si Heterojunction Photodetector with Enhanced Performance by Interfacial Engineering.

    PubMed

    Zhao, Chuanxi; Liang, Zhimin; Su, Mingze; Liu, Pengyi; Mai, Wenjie; Xie, Weiguang

    2015-11-25

    Photodetectors with a wide spectrum response are important components for sensing, imaging, and other optoelectronic applications. A molybdenum oxide (MoO(3-x))/Si heterojunction has been applied as solar cells with great success, but its potential in photodetectors has not been explored yet. Herein, a self-powered, high-speed heterojunction photodetector fabricated by coating an n-type Si hierarchical structure with an ultrathin hole-selective layer of molybdenum oxide (MoO(3-x)) is first investigated. Excellent and stable photoresponse performance is obtained by using a methyl group passivated interface. The heterojunction photodetector demonstrated high sensitivity to a wide spectrum from 300 to 1100 nm. The self-powered photodetector shows a high detectivity of (∼6.29 × 10(12) cmHz(1/2) W(-1)) and fast response time (1.0 μs). The excellent photodetecting performance is attributed to the enhanced interfacial barrier height and three-dimensional geometry of Si nanostructures, which is beneficial for efficient photocarrier collection and transportation. Finally, our devices show excellent long-term stability in air for 6 months with negligible performance degradation. The thermal evaporation method for large-scale fabrication of MoO(3-x)/n-Si photodetectors makes it suitable for self-powered, multispectral, and high-speed response photodetecting applications. PMID:26544078

  6. Coupling with a narrow-band-gap semiconductor for the enhancement of visible-light photocatalytic activity: preparation of Bi2OxS3-x/Nb6O17 and application to the degradation of methyl orange.

    PubMed

    Yan, Gang; Shi, Hongfei; Tan, Huaqiao; Zhu, Wanbin; Wang, Yonghui; Zang, Hongying; Li, Yangguang

    2016-09-21

    A series of 2D sheet Bi2OxS3-x/Nb6O17 (Bi/Nb) heterostructure photocatalysts were synthesized through a facile hydrothermal vulcanization method between Bi(3+) exchanged K4Nb6O17 and thiourea (NH2CSNH2). XRD results confirm that the heterostructures were composed of Bi2OxS3-x and Nb6O17. HRTEM indicates that Bi2OxS3-x was successfully intercalated into layers of K4Nb6O17. Such large interfacial contacts can be beneficial to the transfer and separation of photogenerated charge carriers. Thus the composites exhibit good photocatalytic performance for the degradation of methyl orange (MO) under visible light irradiation (λ > 400 nm), which is superior to that of both precursors, pure Bi2S3 and K4Nb6O17. Radical capture tests reveal that photogenerated holes h(+) and ˙O2(-) play important roles in the photodegradation of MO. And based on the UV-visible diffuse reflectance spectra (DRS) and the band gap of the semiconductors, the mechanism of the enhanced visible light photocatalytic activity of these composites has been proposed. PMID:27526958

  7. A new domino failure mechanism in deep sub-100-nm technologies and its solution

    NASA Astrophysics Data System (ADS)

    Yang, Ge; Kang, Sung-Mo

    2004-03-01

    The domino circuit failure is due to competing requirements of the keeper and the NMOS logic transistors that cannot be satisfied simultaneously in order to achieve the noise margin and performance objectives. Domino keeper transistor has to be upsized to compensate for the subthreshold leakage and gate leakage currents that discharge the dynamic node in deep sub-100nm technologies. Domino multiplexer can fail when the fan-in number is greater than 14 for the noise margin of 0.1 Vdd, where the noise margin is defined as the input voltage that causes 10% voltage drop at the dynamic node of Domino. In simulation, 45nm BSIM4 models were used with the power supply voltage of 0.8V. To solve this problem, we propose a dual gate oxide thickness (Tox) implementation for high fan-in Domino. With proper dual gate oxide thickness assignment, subthreshold leakage and gate leakage that discharge the dynamic node are suppressed with the keeper size reduced. Proposed circuit not only prevents the possible failure in high fan-in Domino, but also reduces the delay and power consumption due to decreased contention between the keeper and NMOS logic tree. For 14-bit domino multiplexer, proposed circuit is 56% faster with 66% less power consumption and without area penalty, compared to single Tox domino.

  8. Sub-10 nm nanopantography

    SciTech Connect

    Tian, Siyuan Donnelly, Vincent M. E-mail: economou@uh.edu; Economou, Demetre J. E-mail: economou@uh.edu; Ruchhoeft, Paul

    2015-11-09

    Nanopantography, a massively parallel nanopatterning method over large areas, was previously shown to be capable of printing 10 nm features in silicon, using an array of 1000 nm-diameter electrostatic lenses, fabricated on the substrate, to focus beamlets of a broad area ion beam on selected regions of the substrate. In the present study, using lens dimensional scaling optimized by computer simulation, and reduction in the ion beam image size and energy dispersion, the resolution of nanopantography was dramatically improved, allowing features as small as 3 nm to be etched into Si.

  9. CMOS downsizing toward sub-10 nm

    NASA Astrophysics Data System (ADS)

    Iwai, Hiroshi

    2004-04-01

    Recently, CMOS downsizing has been accelerated very aggressively in both production and research level, and even transistor operation of a 6 nm gate length p-channel MOSFET was reported in a conference. However, many serious problems are expected for implementing such small-geometry MOSFETs into large scale integrated circuits, and it is still questionable whether we can successfully introduce sub-10 nm CMOS LSIs into the market or not. In this paper, limitation and its possible causes for the downscaling of CMOS towards sub-10 nm are discussed with consideration of past CMOS predictions for the limitation.

  10. Fabrication of 10nm diameter carbon nanopores

    SciTech Connect

    Radenovic, Aleksandra; Trepagnier, Eliane; Csencsits, Roseann; Downing, Kenneth H; Liphardt, Jan

    2008-09-25

    The addition of carbon to samples, during imaging, presents a barrier to accurate TEM analysis, the controlled deposition of hydrocarbons by a focused electron beam can be a useful technique for local nanometer-scale sculpting of material. Here we use hydrocarbon deposition to form nanopores from larger focused ion beam (FIB) holes in silicon nitride membranes. Using this method, we close 100-200nm diameter holes to diameters of 10nm and below, with deposition rates of 0.6nm per minute. I-V characteristics of electrolytic flow through these nanopores agree quantitatively with a one dimensional model at all examined salt concentrations.

  11. Laser Damage Growth in Fused Silica with Simultaneous 351 nm and 1053 nm irradiation

    SciTech Connect

    Norton, M A; Carr, A V; Carr, C W; Donohue, E E; Feit, M D; Hollingsworth, W G; Liao, Z; Negres, R A; Rubenchik, A M; Wegner, P J

    2008-10-24

    Laser-induced growth of optical damage often determines the useful lifetime of an optic in a high power laser system. We have extended our previous work on growth of laser damage in fused silica with simultaneous 351 nm and 1053 nm laser irradiation by measuring the threshold for growth with various ratios of 351 nm and 1053 nm fluence. Previously we reported that when growth occurs, the growth rate is determined by the total fluence. We now find that the threshold for growth is dependent on both the magnitude of the 351 nm fluence as well as the ratio of the 351 nm fluence to the 1053 nm fluence. Furthermore, the data suggests that under certain conditions the 1053 nm fluence does not contribute to the growth.

  12. Intranasal insulin prevents anesthesia-induced hyperphosphorylation of tau in 3xTg-AD mice

    PubMed Central

    Chen, Yanxing; Run, Xiaoqin; Liang, Zhihou; Zhao, Yang; Dai, Chun-ling; Iqbal, Khalid; Liu, Fei; Gong, Cheng-Xin

    2014-01-01

    Background: It is well documented that elderly individuals are at increased risk of cognitive decline after anesthesia. General anesthesia is believed to be a risk factor for Alzheimer’s disease (AD). Recent studies suggest that anesthesia may increase the risk for cognitive decline and AD through promoting abnormal hyperphosphorylation of tau, which is crucial to neurodegeneration seen in AD. Methods: We treated 3xTg-AD mice, a commonly used transgenic mouse model of AD, with daily intranasal administration of insulin (1.75 U/day) for one week. The insulin- and control-treated mice were then anesthetized with single intraperitoneal injection of propofol (250 mg/kg body weight). Tau phosphorylation and tau protein kinases and phosphatases in the brains of mice 30 min and 2 h after propofol injection were then investigated by using Western blots and immunohistochemistry. Results: Propofol strongly promoted hyperphosphorylation of tau at several AD-related phosphorylation sites. Intranasal administration of insulin attenuated propofol-induced hyperphosphorylation of tau, promoted brain insulin signaling, and led to up-regulation of protein phosphatase 2A, a major tau phosphatase in the brain. Intranasal insulin also resulted in down-regulation of several tau protein kinases, including cyclin-dependent protein kinase 5, calcium/calmodulin-dependent protein kinase II, and c-Jun N-terminal kinase. Conclusion: Our results demonstrate that pretreatment with intranasal insulin prevents AD-like tau hyperphosphorylation. These findings provide the first evidence supporting that intranasal insulin administration might be used for the prevention of anesthesia-induced cognitive decline and increased risk for AD and dementia. PMID:24910612

  13. Fe(3-x)Ti(x)O4 nanoparticles as tunable probes of microbial metal oxidation.

    PubMed

    Liu, Juan; Pearce, Carolyn I; Liu, Chongxuan; Wang, Zheming; Shi, Liang; Arenholz, Elke; Rosso, Kevin M

    2013-06-19

    Present and emerging biotechnological applications for iron (oxyhydr)oxide nanomaterials depend on their interaction with microorganisms, as do their toxicity, transport, and fate in biological and environmental systems. However, mass or electron transfer along key molecular pathways at microbe-nanomaterial interfaces is extremely difficult to quantify because of system complexity. Inspired by Fe(II)-oxidizing microbes widespread in nature, we isolate and characterize one such pathway by examining the oxidation of Fe(3-x)Ti(x)O4 (magnetite-titanomagnetite) nanoparticles by the bacterial electron transfer enzyme MtoA, a decaheme c-type cytochrome. Oxidation by MtoA was studied as a function of the thermodynamic driving force for electron transfer by controlling the Ti(IV) doping content (x), which tunes the solid-state Fe(II)/Fe(III) ratio built into the nanoparticles. A higher Fe(II)/Fe(III) ratio appears to systematically increase the electron transfer kinetics to the cytochrome. In situ X-ray diffraction indicated that, during oxidation, the spinel ferrite lattice remains intact while structural Fe(II) is progressively depleted. Surface and atomic site specific Fe L(2,3)-edge X-ray magnetic circular dichroism indicated that MtoA directly accesses magnetically ordered B-sublattice Fe(II) at the interface. This study provides the first quantitative insights into an isolated molecular pathway for biotransformation of iron (oxyhydr)oxide nanomaterials, and more generally, it also illustrates new techniques for probing these pathways in detail, featuring use of tailored nanoparticles, purified metalloenzyme, and synchrotron X-ray absorption spectroscopies. PMID:23672679

  14. Engineering of Methylation State Specific 3xMBT Domain Using ELISA Screening

    PubMed Central

    Feldman, Michal; Zarivach, Raz; Aharoni, Amir; Levy, Dan

    2016-01-01

    The ε-amino group of lysine residues may be mono-, di- or tri-methylated by protein lysine methyltransferases. In the past few years it has been highly considered that methylation of both histone and non-histone proteins has fundamental role in development and progression of various human diseases. Thus, the establishment of tools to study lysine methylation that will distinguish between the different states of methylation is required to elucidate their cellular functions. The 3X malignant brain tumor domain (3XMBT) repeats of the Lethal(3)malignant brain tumor-like protein 1 (L3MBTL1) have been utilized in the past as an affinity reagent for the identification of mono- and di-methylated lysine residues on individual proteins and on a proteomic scale. Here, we have utilized the 3XMBT domain to develop an enzyme-linked immunosorbent assay (ELISA) that allows the high-throughput detection of 3XMBT binding to methylated lysines. We demonstrated that this system allows the detection of methylated peptides, methylated proteins and PKMT activity on both peptides and proteins. We also optimized the assay to detect 3XMBT binding in crude E. coli lysates which facilitated the high throughput screening of 3XMBT mutant libraries. We have utilized protein engineering tools and generated a double site saturation 3XMBT library of residues 361 and 411 that were shown before to be important for binding mono and di-methylated substrates and identified variants that can exclusively recognize only di-methylated peptides. Together, our results demonstrate a powerful new approach that will contribute to deeper understanding of lysine methylation biology and that can be utilized for the engineering of domains for specific binders of other post-translational modifications. PMID:27111853

  15. Fe3-xTixO4 Nanoparticles as Tunable Probes of Microbial Metal Oxidation

    SciTech Connect

    Liu, Juan; Pearce, Carolyn I.; Liu, Chongxuan; Wang, Zheming; Shi, Liang; Arenholz, Elke; Rosso, Kevin M.

    2013-05-14

    Present and emerging biotechnological applications for iron (oxyhydr)oxide nanomaterials depend on their interaction with microorganisms, as do their toxicity, transport, and fate in biological and environmental systems. However, mass or electron transfer along key molecular pathways at microbe-nanomaterial interfaces is extremely difficult to quantify because of system complexity. Inspired by Fe(II)-oxidizing microbes widespread in nature, we isolate and characterize one such pathway by examining the oxidation of Fe3-xTixO4 (magnetite-titanomagnetite) nanoparticles by the bacterial electron transfer enzyme MtoA, a decaheme c-type cytochrome. Oxidation by MtoA was studied as a function of the thermodynamic driving force for electron transfer by controlling the Ti(IV) doping content (x), which tunes the solid-state Fe(II)/Fe(III) ratio built into the nanoparticles. A higher Fe(II)/Fe(III) ratio appears to proportionally increase the electron transfer kinetics to the cytochrome. In situ x-ray diffraction indicated that during oxidation the spinel ferrite lattice remains intact while structural Fe(II) is progressively depleted. Surface and atomic site specific Fe L2,3-edge x-ray magnetic circular dichroism indicated that MtoA directly accesses magnetically-ordered B-sublattice Fe(II) at the interface. This study provides first quantitative insights into an isolated molecular pathway for biotransformation of iron (oxyhydr)oxide nanomaterials. And, more generally, it also illustrates new techniques for probing these pathways in detail, featuring use of tailored nanoparticles, purified metalloenzyme, and synchrotron x-ray absorption spectroscopies.

  16. Genetic Network Programming with Intron-Like Nodes

    NASA Astrophysics Data System (ADS)

    Mabu, Shingo; Chen, Yan; Eto, Shinji; Shimada, Kaoru; Hirasawa, Kotaro

    Recently, Genetic Network Programming (GNP) has been proposed, which is an extension of Genetic Algorithm(GA) and Genetic Programming(GP). GNP can make compact programs and can memorize the past history in it implicitly, because it expresses the solution by directed graphs and therefore, it can reuse the nodes. In this research, intron-like nodes are introduced for improving the performance of GNP. The aim of introducing intron-like nodes is to use every node as much as possible. It is found from simulations that the intron-like nodes are useful for improving the training speed and generalization ability.

  17. Mutually connected component of networks of networks with replica nodes

    NASA Astrophysics Data System (ADS)

    Bianconi, Ginestra; Dorogovtsev, Sergey N.; Mendes, José F. F.

    2015-01-01

    We describe the emergence of the giant mutually connected component in networks of networks in which each node has a single replica node in any layer and can be interdependent only on its replica nodes in the interdependent layers. We prove that if, in these networks, all the nodes of one network (layer) are interdependent on the nodes of the same other interconnected layer, then, remarkably, the mutually connected component does not depend on the topology of the network of networks. This component coincides with the mutual component of the fully connected network of networks constructed from the same set of layers, i.e., a multiplex network.

  18. Crystal structure and morphology evolution in the LaXO3, X = Al, Ga, In nano-oxide series. Consequences for the synthesis of luminescent phosphors.

    PubMed

    Pazik, Robert; Seisenbaeva, Gulaim A; Wiglusz, Rafal J; Kepinski, Leszek; Kessler, Vadim G

    2011-04-01

    The LaXO(3):Tb(3+) (X = Al(3+), Ga(3+), In(3+)) perovskite nanoparticles were obtained using the nonhydrolytic treatment (Bradley reaction) of the molecular precursors of the La(O(i)Pr)(3), Al(O(i)Pr)(3), Ga(O(i)Pr)(3), In(5)O(O(i)Pr)(13), and Tb(acac)(3), respectively. It was shown that crystal structure and morphology evolution in the LaXO(3), X = Al, Ga, In nano-oxide series depended on the size and chemical properties of the X-metal atom. Formation of the LaInO(3):Tb(3+) nanoparticles is distinctly less thermodynamically demanding on contrary to the LaAlO(3):Tb(3+) and LaGaO(3):Tb(3+) since it provided crystalline product directly in the solution synthesis at 202 °C, which is the lowest reported synthesis temperature for this compound up-to-date. This behavior was ascribed to the effects directly connected with the dopant substitution (exchange of bigger La(3+) cation with smaller Tb(3+)) as well as reduction of the particle size. The size effects are mostly reflected in the expansion of the cell volume, changes of the cell parameters as well as shifting and broadening of the Raman bands. Indirectly, size reduction has also an effect on the luminescence properties through the higher probability of presence of surface and net defects as well as heterogeneous distribution of the Tb(3+) ions caused by high surface-to-volume ratio. The prepared nanophosphors show basically green emission with exception of white-green in case of the LaInO(3):Tb(3+). Strong emission quenching was found in the latter case being most likely a consequence of the nonradiative energy transfer between Tb(3+) and In(3+) as well as the presence of defects. In comparison to the Pechini's method, the LaXO(3) nanoparticles required significantly lower annealing temperature (700 °C) necessary for complete crystallization. Generally the resulting particles are distinctly smaller (5 to 25 nm) and less agglomerated (50-100 nm) depending on the reaction conditions as well as thermal treatment. For

  19. Tunable electric properties of half-metallic Zn x Fe3-x O4 and the characteristics of Zn x Fe3-x O4 /n-type Si interfaces

    NASA Astrophysics Data System (ADS)

    He, Jie; Wang, Changhong; Cheng, Yahui; Liu, Mengyin; Wang, Weichao; Wang, Weihua; Lu, Feng; Gao, Kuanghong; Li, Zhiqing; Liu, Hui

    2016-03-01

    The physical properties of Zn-doped Fe3O4 (i.e. Zn x Fe3-x O4 with 0≤slant x≤slant 1 ) synthesised by the sol-gel method have been investigated systematically. X-ray diffraction and x-ray photoelectron spectroscopy (XPS) measurements prove that Zn ions have been doped into the Fe3O4 crystal lattice. The valence band XPS spectra show that the carrier concentration decreases with increasing the Zn content. The electric measurements reveal that the resistivity increases when increasing the Zn concentration. The absolute value of the magnetoresistance of Zn x Fe3-x O4 is above 3.11% at room temperature, indicating that the samples maintain high spin polarisation after Zn2+ doping. The fitting of the current-voltage curves of Zn x Fe3-x O4/n-type Si heterostructures demonstrates that the height of the Schottky barrier reduces continuously from 0.82 eV to 0.76 eV with increasing x. The results may recommend Zn x Fe3-x O4 as a potential material for spintronic applications.

  20. Adaptive node techniques for Maxwell's equations

    SciTech Connect

    Hewett, D W

    2000-04-01

    The computational mesh in numerical simulation provides a framework on which to monitor the spatial dependence of function and their derivatives. Spatial mesh is therefore essential to the ability to integrate systems in time without loss of fidelity. Several philosophies have emerged to provide such fidelity (Eulerian, Lagrangian, Arbitrary Lagrangian Eulerian ALE, Adaptive Mesh Refinement AMR, and adaptive node generation/deletion). Regardless of the type of mesh, a major difficulty is in setting up the initial mesh. Clearly a high density of grid points is essential in regions of high geometric complexity and/or regions of intense, energetic activity. For some problems, mesh generation is such a crucial part of the problem that it can take as much computational effort as the run itself, and these tasks are now taking weeks of massively parallel CPU time. Mesh generation is no less crucial to electromagnetic calculations. In fact EM problem set up can be even more challenging without the clues given by fluid motion in hydrodynamic systems. When the mesh is advected with the fluid (Lagrangian), mesh points naturally congregate in regions of high activity. Similarly in AMR algorithms, strong gradients in the fluid flow are one of the triggers for mesh refinement. In the hyperbolic Maxwell's equations without advection, mesh point placement/motion is not so intuitive. In fixed geometry systems, it at least feasible to finely mesh high leverage, geometrically challenged areas. For other systems, where the action takes place far from the boundaries and, likely, changes position in time, the options are limited to either using a high resolution (expensive) mesh in all regions that could require such resolution or adaptively generating nodes to resolve the physics as it evolves. The authors have developed a new time of adaptive node technique for Maxwell's equations to deal with this set of issues.

  1. Integrated production overlay field-by-field control for leading edge technology nodes

    NASA Astrophysics Data System (ADS)

    Chung, Woong Jae; Tristan, John; Gutjahr, Karsten; Subramany, Lokesh; Li, Chen; Sun, Yulei; Yelverton, Mark; Kim, Young Ki; Kim, Jeong Soo; Huang, Chin-Chou Kevin; Pierson, William; Karur-Shanmugam, Ramkumar; Riggs, Brent; Jug, Sven; Robinson, John C.; Yap, Lipkong; Ramanathan, Vidya

    2014-04-01

    As photolithography will continue with 193nm immersion multiple patterning technologies for the leading edge HVM process node, the production overlay requirement for critical layers in logic devices has almost reached the scanner hardware performance limit. To meet the extreme overlay requirements in HVM production environment, this study investigates a new integrated overlay control concept for leading edge technology nodes that combines the run-to-run (R2R) linear or high order control loop, the periodic field-by-field or correction per exposure (CPE) wafer process signature control loop, and the scanner baseline control loop into a single integrated overlay control path through the fab host APC system. The goal is to meet the fab requirements for overlay performance, lower the cost of ownership, and provide freedom of control methodology. In this paper, a detailed implementation of this concept will be discussed, along with some preliminary results.

  2. Light intensification modeling of coating inclusions irradiated at 351 and 1053 nm

    SciTech Connect

    Stolz, Christopher J.; Hafeman, Scott; Pistor, Thomas V

    2008-05-01

    Electric-field modeling provides insight into the laser damage resistance potential of nodular defects. The laser-induced damage threshold for high-reflector coatings is 13x lower at the third harmonic (351 nm) than at the first harmonic (1053 nm) wavelength. Linear and multiphoton absorption increases with decreasing wavelength, leading to a lower-third harmonic laser resistance. Electric-field effects can also be a contributing mechanism to the lower laser resistance with decreasing wavelength. For suitably large inclusions, the nodule behaves as a microlens. The diffraction-limited spot size decreases with wavelength, resulting in an increase in intensity. Comparison of electric-field finite-element simulations illustrates a 3x to 16x greater light intensification at the shorter wavelength.

  3. Eigenvector centrality of nodes in multiplex networks.

    PubMed

    Solá, Luis; Romance, Miguel; Criado, Regino; Flores, Julio; García del Amo, Alejandro; Boccaletti, Stefano

    2013-09-01

    We extend the concept of eigenvector centrality to multiplex networks, and introduce several alternative parameters that quantify the importance of nodes in a multi-layered networked system, including the definition of vectorial-type centralities. In addition, we rigorously show that, under reasonable conditions, such centrality measures exist and are unique. Computer experiments and simulations demonstrate that the proposed measures provide substantially different results when applied to the same multiplex structure, and highlight the non-trivial relationships between the different measures of centrality introduced. PMID:24089967

  4. Greater auricular nerve masquerading as lymph node.

    PubMed

    Saxena, Shilpi; Deb, Prabal; Nijhawan, Vijay Shrawan; Kharayat, Veena; Verma, Rajesh

    2015-01-01

    Hansen's disease is on the verge of being eliminated from India and often missed by clinicians due to low index of suspicion. We present an unusual case in which greater auricular nerve thickening masqueraded as enlarged lymph node in the neck. The patient was referred for fine needle aspiration cytology, which revealed epithelioid cell granulomas suggestive of Hansen's disease. Further clinical examination and investigations including the skin biopsy confirmed the disease, highlighting the role of pathologist in the management of such unusual presentation of a common disease. PMID:26229249

  5. Greater auricular nerve masquerading as lymph node

    PubMed Central

    Saxena, Shilpi; Deb, Prabal; Nijhawan, Vijay Shrawan; Kharayat, Veena; Verma, Rajesh

    2015-01-01

    Hansen's disease is on the verge of being eliminated from India and often missed by clinicians due to low index of suspicion. We present an unusual case in which greater auricular nerve thickening masqueraded as enlarged lymph node in the neck. The patient was referred for fine needle aspiration cytology, which revealed epithelioid cell granulomas suggestive of Hansen's disease. Further clinical examination and investigations including the skin biopsy confirmed the disease, highlighting the role of pathologist in the management of such unusual presentation of a common disease. PMID:26229249

  6. 308nm excimer laser in dermatology.

    PubMed

    Mehraban, Shadi; Feily, Amir

    2014-01-01

    308nm xenon-chloride excimer laser, a novel mode of phototherapy, is an ultraviolet B radiation system consisting of a noble gas and halide. The aim of this systematic review was to investigate the literature and summarize all the experiments, clinical trials and case reports on 308-nm excimer laser in dermatological disorders. 308-nm excimer laser has currently a verified efficacy in treating skin conditions such as vitiligo, psoriasis, atopic dermatitis, alopecia areata, allergic rhinitis, folliculitis, granuloma annulare, lichen planus, mycosis fungoides, palmoplantar pustulosis, pityriasis alba, CD30+ lympho proliferative disorder, leukoderma, prurigo nodularis, localized scleroderma and genital lichen sclerosus. Although the 308-nm excimer laser appears to act as a promising treatment modality in dermatology, further large-scale studies should be undertaken in order to fully affirm its safety profile considering the potential risk, however minimal, of malignancy, it may impose. PMID:25606333

  7. DSA via hole shrink for advanced node applications

    NASA Astrophysics Data System (ADS)

    Chi, Cheng; Liu, Chi-Chun; Meli, Luciana; Schmidt, Kristin; Xu, Yongan; DeSilva, Ekmini Anuja; Sanchez, Martha; Farrell, Richard; Cottle, Hongyun; Kawamura, Daiji; Singh, Lovejeet; Furukawa, Tsuyoshi; Lai, Kafai; Pitera, Jed W.; Sanders, Daniel; Hetzer, David R.; Metz, Andrew; Felix, Nelson; Arnold, John; Colburn, Matthew

    2016-04-01

    Directed self-assembly (DSA) of block copolymers (BCPs) has become a promising patterning technique for 7nm node hole shrink process due to its material-controlled CD uniformity and process simplicity.[1] For such application, cylinder-forming BCP system has been extensively investigated compared to its counterpart, lamella-forming system, mainly because cylindrical BCPs will form multiple vias in non-circular guiding patterns (GPs), which is considered to be closer to technological needs.[2-5] This technological need to generate multiple DSA domains in a bar-shape GP originated from the resolution limit of lithography, i.e. those vias placed too close to each other will merge and short the circuit. In practice, multiple patterning and self-aligned via (SAV) processes have been implemented in semiconductor manufacturing to address this resolution issue.[6] The former approach separates one pattern layer with unresolvable dense features into several layers with resolvable features, while the latter approach simply utilizes the superposition of via bars and the pre-defined metal trench patterns in a thin hard mask layer to resolve individual vias, as illustrated in Fig 1 (upper). With proper design, using DSA to generate via bars with the SAV process could provide another approach to address the resolution issue.

  8. High-frequency Ultrasound Imaging of Mouse Cervical Lymph Nodes

    PubMed Central

    Weed, Scott A.

    2015-01-01

    High-frequency ultrasound (HFUS) is widely employed as a non-invasive method for imaging internal anatomic structures in experimental small animal systems. HFUS has the ability to detect structures as small as 30 µm, a property that has been utilized for visualizing superficial lymph nodes in rodents in brightness (B)-mode. Combining power Doppler with B-mode imaging allows for measuring circulatory blood flow within lymph nodes and other organs. While HFUS has been utilized for lymph node imaging in a number of mouse  model systems, a detailed protocol describing HFUS imaging and characterization of the cervical lymph nodes in mice has not been reported. Here, we show that HFUS can be adapted to detect and characterize cervical lymph nodes in mice. Combined B-mode and power Doppler imaging can be used to detect increases in blood flow in immunologically-enlarged cervical nodes. We also describe the use of B-mode imaging to conduct fine needle biopsies of cervical lymph nodes to retrieve lymph tissue for histological  analysis. Finally, software-aided steps are described to calculate changes in lymph node volume and to visualize changes in lymph node morphology following image reconstruction. The ability to visually monitor changes in cervical lymph node biology over time provides a simple and powerful technique for the non-invasive monitoring of cervical lymph node alterations in preclinical mouse models of oral cavity disease. PMID:26274059

  9. High-frequency Ultrasound Imaging of Mouse Cervical Lymph Nodes.

    PubMed

    Walk, Elyse L; McLaughlin, Sarah L; Weed, Scott A

    2015-01-01

    High-frequency ultrasound (HFUS) is widely employed as a non-invasive method for imaging internal anatomic structures in experimental small animal systems. HFUS has the ability to detect structures as small as 30 µm, a property that has been utilized for visualizing superficial lymph nodes in rodents in brightness (B)-mode. Combining power Doppler with B-mode imaging allows for measuring circulatory blood flow within lymph nodes and other organs. While HFUS has been utilized for lymph node imaging in a number of mouse  model systems, a detailed protocol describing HFUS imaging and characterization of the cervical lymph nodes in mice has not been reported. Here, we show that HFUS can be adapted to detect and characterize cervical lymph nodes in mice. Combined B-mode and power Doppler imaging can be used to detect increases in blood flow in immunologically-enlarged cervical nodes. We also describe the use of B-mode imaging to conduct fine needle biopsies of cervical lymph nodes to retrieve lymph tissue for histological  analysis. Finally, software-aided steps are described to calculate changes in lymph node volume and to visualize changes in lymph node morphology following image reconstruction. The ability to visually monitor changes in cervical lymph node biology over time provides a simple and powerful technique for the non-invasive monitoring of cervical lymph node alterations in preclinical mouse models of oral cavity disease. PMID:26274059

  10. Optical extension at the 193-nm wavelength

    NASA Astrophysics Data System (ADS)

    Zandbergen, Peter; McCallum, Martin; Amblard, Gilles R.; Domke, Wolf-Dieter; Smith, Bruce W.; Zavyalova, Lena; Petersen, John S.

    1999-07-01

    Lithography at 193nm is the first optical lithography technique that will be introduced for manufacturing of technology levels. where the required dimensions are smaller than the actual wavelength. This paper explores several techniques to extend 193nm to low k1 lithography. Most attention is given to binary mask solution in at 130nm dimensions, where k1 is 0.4. Various strong and Gaussian quadrupole illuminators were designed, manufactured and tested for this application. Strong quadrupoles show that largest DOF improvements. The drawback however, is that these strong quadrupoles are very duty cycle and dimensions specific, resulting in large proximity biases between different duty cycles. Due to their design, Gaussian quadrupoles sample much wider frequency ranges, resulting in less duty cycles specific DOF improvements and less proximity basis. At sub-130nm dimensions, strong phase shift masks provide significant latitude improvements, when compared to binary masks with quadrupole illumination. However, differences in dose to size for different duty cycles were up to 25 percent. For definition of contact holes, linewidth biasing through silylation, a key feature of the CARL bi-layer resist approach, demonstrated significant DOF latitude improvements compared to SLR at 140nm and 160nm contact holes.

  11. In die mask overlay control for 14nm double-patterning lithography

    NASA Astrophysics Data System (ADS)

    Chou, William; Cheng, James; Tseng, Alex C. P.; Wu, J. K.; Chang, Chin Kuei; Cheng, Jeffrey; Lee, Adder; Huang, Chain Ting; Peng, N. T.; Hsu, Simon C. C.; Yu, Chun Chi; Lu, Colbert; Yu, Julia; Craig, Peter; Pollock, Chuck; Ham, Young; McMurran, Jeff

    2015-10-01

    According to the ITRS roadmap, semiconductor industry drives the 193nm lithography to its limits, using techniques like Double Pattern Technology (DPT), Source Mask Optimization (SMO) and Inverse Lithography Technology (ILT). In terms of considering the photomask metrology, full in-die measurement capability is required for registration and overlay control with challenging specifications for repeatability and accuracy. Double patterning using 193nm immersion lithography has been adapted as the solution to enable 14nm technology nodes. The overlay control is one of the key figures for the successful realization of this technology. In addition to the various error contributions from the wafer scanner, the reticles play an important role in terms of considering lithographic process contributed errors. Accurate pattern placement of the features on reticles with a registration error below 4nm is mandatory to keep overall photomask contributions to overlay of sub 20nm logic within the allowed error budget. In this paper, we show in-die registration errors using 14nm DPT product masks, by measuring in-die overlay patterns comparing with regular registration patterns. The mask measurements are used to obtain an accurate model to predict mask contribution on wafer overlay of double patterning technology.

  12. Evaluation of resist performance with EUV interference lithography for sub-22-nm patterning

    NASA Astrophysics Data System (ADS)

    Ekinci, Yasin; Vockenhuber, Michaela; Terhalle, Bernd; Hojeij, Mohamad; Wang, Li; Younkin, Todd R.

    2012-03-01

    The performance of EUV resists is a key factor for the cost-effective introduction of EUV lithography. Although most of the global effort concentrates on resist performance at 22 nm half-pitch, it is crucial for the future of EUVL to show its extendibility towards further technology nodes. In the last years, the EUV interference lithography tool at Paul Scherrer Institute, with its high-resolution and well-defined areal image, has been successfully employed for resist performance testing. In this paper, we present performance (dose, CD, LER) of a chemically-amplified resist for a range of 16 nm to 30 nm HP. Cross-sectional SEM images of the patterns are presented providing valuable insight into the resist's performance and failure mode. The reproducibility of our experiments are presented by repeating the same exposures with constant process conditions over the course of several months, demonstrating the excellent stability of the tool as well as the long shelf-life of our baseline resist. In addition, a comparative study of performance (dose, CD, LER) of different inorganic resists is provided. Patterns of 16 nm and 10 nm HPs are demonstrated with an EUV CAR and inorganic resists, respectively. Moreover, initial results of patterning with 6.5 nm wavelength are presented.

  13. Photoconductive response of type IIa diamond in the 222-353-nm range

    NASA Astrophysics Data System (ADS)

    Krishnan, Mahadevan; Lipatov, Evgenii E. I.; Parks, D.; Panchenko, Alexei N.; Schein, Jochen; Tarasenko, Victor F.; Thompson, J.

    2004-05-01

    Diamond radiation detectors (DRDs) operate on the principle of photoconductive response of the normally insulating, Type IIa diamond when dosed by electromagnetic radiation or high energy particles. As detectors, they offer fast response (~100 ps) and can handle high radiation doses (~1 GGy) without degradation. Diamond also offers significant advantages over semiconducting materials as a compact, bi-polar, high voltage switching medium because of its high dielectric strength and thermal conductivity. However, the wide band-gap of diamond and its normally insulating state impose stringent requirements on the trigger radiation that is used to make the diamond conductive. This paper describes a simple model for conduction in diamond, and compares this model with experimental conductivity as measured in a natural diamond Type IIa radiation detector that was irradiated by laser excitation at various wavelengths from 222-353 nm. The DRD geometry consisted of a 3x1x0.5 mm3 Type IIa diamond with metallization on the 3x0.5mm2 sides. The DRD was exposed to laser light in the orthogonal 3x1 mm2 plane. Agreement with the measured data is achieved by fitting a parameter (defined here as β) at the various irradiation wavelengths. This fitting parameter is itself a function of two physical quantities: α, the absorption coefficient of the diamond and ɛo, the ionization cost to produce a hole-pair. Using published values of α, we deduce values of ɛo and compare them with published values for Type IIa diamond in the deep UV to soft x-ray regions. This model also provides a basis for design of high voltage diamond switches that are triggered by near-bandgap (220-250 nm) UV radiation.

  14. Prognostic Significance of Number of Positive Nodes: A Long-Term Study of One to Two Nodes Versus Three Nodes in Breast Cancer Patients

    SciTech Connect

    Tai, Patricia; Yu, Edward; Joseph, Kurian

    2010-05-01

    Purpose: Previous reports of breast cancer have generally analyzed patients with one to three positive lymph nodes as a single group, often leading to controversy regarding the practical clinical applicability. The present study separately analyzed the survival outcomes of Stage T1-T2 breast cancer patients according to whether one, two, or three axillary nodes were pathologically positive. Methods and Materials: The records of 5,996 patients were available for analysis from the population-based Saskatchewan provincial registry between 1981 and 1995. Because the reliability of the nodal assessment depends on the number of lymph nodes sampled, only those 755 patients with Stage T1-T2 disease and eight or more nodes examined were analyzed further for overall survival and cause-specific survival (CSS). Results: Patients with one and two positive nodes had nearly indistinguishable survival plots, but those with three positive nodes had a distinct trend toward worse survival. The overall survival rate of patients with one, two, and three nodes at 5, 10, and 15 years was 82.7%, 77.0%, and 79.0%, 64.8%, 60.9%, and 52.8%, and 48.8%, 48.0%, and 40.9%, respectively (p = .11). The corresponding CSS rates at 5, 10, and 15 years were 89.4%, 82.0%, and 81.3%, 78.87%, 72.9%, and 62.1%, and 72.7%. 69.0%, and 55.6% (p = .0004). The use of regional radiotherapy did not confer any apparent survival benefit in terms of either overall survival or CSS. Conclusion: Patients with one or two positive nodes had a similar CSS. However, those with three positive nodes fared worse, with a significantly reduced CSS compared with those with one or two involved nodes. Thus, the survival data among patients with one to three nodes positive reveals clearly relevant differences when analyzed separately.

  15. Extreme ultraviolet patterned mask inspection performance of advanced projection electron microscope system for 11nm half-pitch generation

    NASA Astrophysics Data System (ADS)

    Hirano, Ryoichi; Iida, Susumu; Amano, Tsuyoshi; Watanabe, Hidehiro; Hatakeyama, Masahiro; Murakami, Takeshi; Suematsu, Kenichi; Terao, Kenji

    2016-03-01

    Novel projection electron microscope optics have been developed and integrated into a new inspection system named EBEYE-V30 ("Model EBEYE" is an EBARA's model code) , and the resulting system shows promise for application to half-pitch (hp) 16-nm node extreme ultraviolet lithography (EUVL) patterned mask inspection. To improve the system's inspection throughput for 11-nm hp generation defect detection, a new electron-sensitive area image sensor with a high-speed data processing unit, a bright and stable electron source, and an image capture area deflector that operates simultaneously with the mask scanning motion have been developed. A learning system has been used for the mask inspection tool to meet the requirements of hp 11-nm node EUV patterned mask inspection. Defects are identified by the projection electron microscope system using the "defectivity" from the characteristics of the acquired image. The learning system has been developed to reduce the labor and costs associated with adjustment of the detection capability to cope with newly-defined mask defects. We describe the integration of the developed elements into the inspection tool and the verification of the designed specification. We have also verified the effectiveness of the learning system, which shows enhanced detection capability for the hp 11-nm node.

  16. Validation of the Actigraph GT3X and ActivPAL Accelerometers for the Assessment of Sedentary Behavior

    ERIC Educational Resources Information Center

    Kim, Youngdeok; Barry, Vaughn W.; Kang, Minsoo

    2015-01-01

    This study examined (a) the validity of two accelerometers (ActiGraph GT3X [ActiGraph LLC, Pensacola, FL, USA] and activPAL [PAL Technologies Ltd., Glasgow, Scotland]) for the assessment of sedentary behavior; and (b) the variations in assessment accuracy by setting minimum sedentary bout durations against a proxy for direct observation using an…

  17. Enhancement of magnetic moment in ZnxFe3-xO4 thin films with dilute Zn substitution

    NASA Astrophysics Data System (ADS)

    Yuan, Honglei; Liu, Er; Yin, Yuli; Zhang, Wen; Wong, P. K. Johnny; Zheng, Jian-Guo; Huang, Zhaocong; Ou, Huiling; Zhai, Ya; Xu, Qingyu; Du, Jun; Zhai, Hongru

    2016-06-01

    Highly (111)-textured ZnxFe3-xO4 thin films were grown by pulsed laser deposition on silicon substrates. The spin and orbital magnetic moments of the ZnxFe3-xO4 thin films have been obtained by X-ray magnetic circular dichroism (XMCD) and sum rule analysis. The total magnetic moments thus extracted are in good agreement with the values obtained by vibrating sample magnetometer. Both the unquenched orbital moment and the ratio of orbital-to-spin moment first increase significantly with increasing Zn substitution at a low concentration range ( 0 ≤x ≤0.1 ), and then decrease at a higher concentration (x = 0.3). The underlying site-specific doping mechanisms involved here have been elucidated by detailed analysis of the XMCD of ZnxFe3-xO4 films. Our work demonstrates a practical means to manipulate the spin-orbit coupling in the ZnxFe3-xO4 thin films via Zn impurity doping.

  18. Growth and characterization of molecular beam epitaxy-grown Bi2Te3-xSex topological insulator alloys

    NASA Astrophysics Data System (ADS)

    Tung, Y.; Chiang, Y. F.; Chong, C. W.; Deng, Z. X.; Chen, Y. C.; Huang, J. C. A.; Cheng, C.-M.; Pi, T.-W.; Tsuei, K.-D.; Li, Z.; Qiu, H.

    2016-02-01

    We report a systematic study on the structural and electronic properties of Bi2Te3-xSex topological insulator alloy grown by molecular beam epitaxy (MBE). A mixing ratio of Bi2Se3 to Bi2Te3 was controlled by varying the Bi:Te:Se flux ratio. X-ray diffraction and Raman spectroscopy measurements indicate the high crystalline quality for the as-grown Bi2Te3-xSex films. Substitution of Te by Se is also revealed from both analyses. The surfaces of the films exhibit terrace-like quintuple layers and their size of the characteristic triangular terraces decreases monotonically with increasing Se content. However, the triangular terrace structure gradually recovers as the Se content further increases. Most importantly, the angle-resolved photoemission spectroscopy results provide evidence of single-Dirac-cone like surface states in which Bi2Te3-xSex with Se/Te-substitution leads to tunable surface states. Our results demonstrate that by fine-tuned MBE growth conditions, Bi2Te3-xSex thin film alloys with tunable topological surface states can be obtained, providing an excellent platform for exploring the novel device applications based on this compound.

  19. Epitaxial thin films of ATiO(3-x)H(x) (A = Ba, Sr, Ca) with metallic conductivity.

    PubMed

    Yajima, Takeshi; Kitada, Atsushi; Kobayashi, Yoji; Sakaguchi, Tatsunori; Bouilly, Guillaume; Kasahara, Shigeru; Terashima, Takahito; Takano, Mikio; Kageyama, Hiroshi

    2012-05-30

    Epitaxial thin films of titanium perovskite oxyhydride ATiO(3-x)H(x) (A = Ba, Sr, Ca) were prepared by CaH(2) reduction of epitaxial ATiO(3) thin films deposited on a (LaAlO(3))(0.3)(SrAl(0.5)Ta(0.5)O(3))(0.7) substrate. Secondary ion mass spectroscopy detected a substantial amount and uniform distribution of hydride within the film. SrTiO(3)/LSAT thin film hydridized at 530 °C for 1 day had hydride concentration of 4.0 × 10(21) atoms/cm(3) (i.e., SrTiO(2.75)H(0.25)). The electric resistivity of all the ATiO(3-x)H(x) films exhibited metallic (positive) temperature dependence, as opposed to negative as in BaTiO(3-x)H(x) powder, revealing that ATiO(3-x)H(x) are intrinsically metallic, with high conductivity of 10(2)-10(4) S/cm. Treatment with D(2) gas results in hydride/deuteride exchange of the films; these films should be valuable in further studies on hydride diffusion kinetics. Combined with the materials' inherent high electronic conductivity, new mixed electron/hydride ion conductors may also be possible. PMID:22563869

  20. Efficient Tailoring of Upconversion Selectivity by Engineering Local Structure of Lanthanides in Na(x)REF(3+x) Nanocrystals.

    PubMed

    Dong, Hao; Sun, Ling-Dong; Wang, Ye-Fu; Ke, Jun; Si, Rui; Xiao, Jia-Wen; Lyu, Guang-Ming; Shi, Shuo; Yan, Chun-Hua

    2015-05-27

    Efficient tailoring of upconversion emissions in lanthanide-doped nanocrystals is of great significance for extended optical applications. Here, we present a facile and highly effective method to tailor the upconversion selectivity by engineering the local structure of lanthanides in Na(x)REF(3+x) nanocrystals. The local structure engineering was achieved through precisely tuning the composition of nanocrystals, with different [Na]/[RE] ([F]/[RE]) ratio. It was found that the lattice parameter as well as the coordination number and local symmetry of lanthanides changed with the composition. A significant difference in the red to green emission ratio, which varied from 1.9 to 71 and 1.6 to 116, was observed for Na(x)YF(3+x):Yb,Er and Na(x)GdF(3+x):Yb,Er nanocrystals, respectively. Moreover, the local structure-dependent upconversion selectivity has been verified for Na(x)YF(3+x):Yb,Tm nanocrystals. In addition, the local structure induced upconversion emission from Er(3+) enhanced 9 times, and the CaF2 shell grown epitaxially over the nanocrystals further promoted the red emission by 450 times, which makes it superior as biomarkers for in vivo bioimaging. These exciting findings in the local structure-dependent upconversion selectivity not only offer a general approach to tailoring lanthanide related upconversion emissions but also benefit multicolor displays and imaging. PMID:25938687

  1. Social temperament and lymph node innervation

    PubMed Central

    Sloan, Erica K.; Capitanio, John P.; Tarara, Ross P.; Cole, Steve W.

    2008-01-01

    Socially inhibited individuals show increased vulnerability to viral infections, and this has been linked to increased activity of the sympathetic nervous system (SNS). To determine whether structural alterations in SNS innervation of lymphoid tissue might contribute to these effects, we assayed the density of catecholaminergic nerve fibers in 13 lymph nodes from 7 healthy adult rhesus macaques that showed stable individual differences in propensity to socially affiliate (Sociability). Tissues from Low Sociable animals showed a 2.8-fold greater density of catecholaminergic innervation relative to tissues from High Sociable animals, and this was associated with a 2.3-fold greater expression of nerve growth factor (NGF) mRNA, suggesting a molecular mechanism for observed differences. Low Sociable animals also showed alterations in lymph node expression of the immunoregulatory cytokine genes IFNG and IL4, and lower secondary IgG responses to tetanus vaccination. These findings are consistent with the hypothesis that structural differences in lymphoid tissue innervation might potentially contribute to relationships between social temperament and immunobiology. PMID:18068331

  2. Characterization of EUV resists for defectivity at 32nm

    NASA Astrophysics Data System (ADS)

    Montal, Ofir; Dolev, Ido; Rosenzweig, Moshe; Dotan, Kfir; Meshulach, Doron; Adan, Ofer; Levi, Shimon; Cai, Man-Ping; Bencher, Chris; Ngai, Chris S.; Jehoul, Christiane; Van Den Heuvel, Dieter; Hendrickx, Eric

    2011-03-01

    Extreme ultraviolet (EUV) lithography is considered as the leading patterning technology beyond the ArF-based optical lithography, addressing the need for transistor densification to meet Moore's Law. Theoretically, EUV lithography at 13.5nm wavelength meets the resolution requirements for 1xnm technology nodes. However, there are several major challenges in the development of EUV lithography for mass production of advanced CMOS devices. These include the development of high power EUV light sources, EUV optics, EUV masks, EUV resists, overlay accuracy, and metrology and inspection capabilities. In particular, it is necessary to ensure that effective defect control schemes will be made available to reduce the EUV lithography defectivity to acceptable levels. This paper presents a study on the wafer defectivity and characterization of patterned EUV resists, with the objective of providing a quantitative comparison between the defectivity of different resist materials and different stacks. Patterned wafers were printed using the ASML® EUV full-field Alpha-Demo Tool (ADT 0.25 NA) at imec. The EUV resist patterns were 32nm line/spaces. Several advanced resist types were screened experimentally. The different resist types and stacks were inspected using a DUV laser based brightfield inspection tool, followed by a SEM defect review and CD metrology measurements. The patterns were characterized in terms of defect types and defect density. We identified the major defect types and discuss factors that affect the defectivity level and pattern quality, such as resist type, exposure dose and focus. Defect scattering analysis of DUV polarized light at different polarizations was performed, to indicate on the inspection performance trends for a variety of defect types and sizes of the different resists and stacks. The scattering analysis shows that higher defect scattering is induced using polarized light.

  3. The Double-ended 750 nm and 532 nm Laser Output from PPLN-FWM

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Li, Yu-Xiang; Yao, Jian-Quan; Guo, Ling; Wang, Zhuo; Han, Sha-Sha; Zhang, Cui-Ying; Zhong, Kai

    2013-06-01

    We investigate 750 nm and 532 nm dual-wavelength laser for applications in the internet of things. A kind of optical maser is developed, in which the semiconductor module outputs the 808 nm pump light and then it goes into a double-clad Nd3+ :YAG monocrystal optical fiber through the intermediate coupler and forms a 1064 nm laser. The laser outputs come from both left and right terminals. In the right branch, the laser goes into the right cycle polarization LinNbO3 (PPLN) crystal through the right coupler, produces the optical parametric oscillation and forms the signal light λ1 (1500 nm), the idle frequency light λ2 (3660.55 nm), and the second-harmonic of the signal light λ3 (750 nm). These three kinds of light and the pump light λ4 together form the frequency matching and the quasi-phase matching, then the four-wave mixing occurs to create the high-gain light at wavelength 750 nm. Meanwhile, in the left branch, the laser goes into the left PPLN crystal through the left coupler, engenders frequency doubling and forms the light at wavelength 532 nm. That is to say, the optical maser provides 750 nm and 532 nm dual-wavelength laser outputting from two terminals, which is workable.

  4. Optical characterization of ex-vivo axillary lymph nodes of breast-cancer patients using a custom-built spectrophotometer

    NASA Astrophysics Data System (ADS)

    Sampathkumar, Ashwin; Saegusa-Beecroft, Emi; Mamou, Jonathan; Chitnis, Parag V.; Machi, Junji; Feleppa, Ernest J.

    2014-03-01

    Quantitative photoacoustics is emerging as a new hybrid modality to investigate diseases and cells in human pathology and cytology studies. Optical absorption of light is the predominant mechanism behind the photoacoustic effect. Therefore, a need exits to characterize the optical properties of specimens and to identify the relevant operating wavelengths for photoacoustic imaging. We have developed a custom low-cost spectrophotometer to measure the optical properties of human axillary lymph nodes dissected for breast-cancer staging. Optical extinction curves of positive and negative nodes were determined in the spectral range of 400 to 1000 nm. We have developed a model to estimate tissue optical properties, taking into account the role of fat and saline. Our results enabled us to select the optimal optical wavelengths for maximizing the imaging contrast between metastatic and noncancerous tissue in axillary lymph nodes.

  5. Boson localization and universality in YBa2Cu(3-x)M(x)O(7-delta)

    NASA Technical Reports Server (NTRS)

    Kallio, A.; Apaja, V.; Poykko, S.

    1995-01-01

    We consider a two component mixture of charged fermions on neutralizing background with all sign combinations and arbitrarily small mass ratios. In the two impurity limit for the heavier component we show that the pair forms a bound state for all charge combinations. In the lowest order approximation we derive a closed form expression Veff(r) for the binding potential which has short-range repulsion followed by attraction. In the classical limit, when the mass of embedded particles is large m2 much greater than m, we can calculate from Veff(r) also the cohesive energy E and the bond length R of a metallic crystal such as lithium. The lowest order result is R = 3.1 A, E = -0.9 eV, not entirely different from the experimental result for lithium metal. The same interaction for two holes on a parabolic band with m2 greater than m gives the quantum mechanical bound state which one may interpret as a boson or local pair in the case of high-Te and heavy fermion superconductors. We also show that for compounds of the type YBa2Cu(3 - x)M(x)O(7 - delta) one can understand most of the experimental results for the superconducting and normal states with a single temperature dependent boson breaking function f(T) for each impurity content x governing the decay of bosons into pairing fermions. In the normal state f(T) turns out to be a linear, universal function, independent of the impurity content I and the oxygen content delta. We predict with universality a depression in Tc(x) with slight down bending in agreement with experiment. As a natural consequence of the model the bosons become localized slightly above Tc due to the Wigner crystallization, enhanced with lattice local field minima. The holes remain delocalized with a linearly increasing concentration in the normal state, thus explaining the rising Hall density. The boson localization temperature T(sub BL) shows up as a minimum in the Hall density R(sub ab)(exp -1). We also give explanation for very recently observed

  6. Analysis of wafer heating in 14nm DUV layers

    NASA Astrophysics Data System (ADS)

    Subramany, Lokesh; Chung, Woong Jae; Samudrala, Pavan; Gao, Haiyong; Aung, Nyan; Gomez, Juan Manuel; Minghetti, Blandine; Lee, Shawn

    2016-03-01

    To further shrink the contact and trench dimensions, Negative Tone Development (NTD) has become the de facto process at these layers. The NTD process uses a positive tone resist and an organic solvent-based negative tone developer which leads to improved image contrast, larger process window and smaller Mask Error Enhancement Factor (MEEF)[1]. The NTD masks have high transmission values leading to lens heating and as observed here wafer heating as well. Both lens and wafer heating will contribute to overlay error, however the effects of lens heating can be mitigated by applying lens heating corrections while no such corrections exist for wafer heating yet. Although the magnitude of overlay error due to wafer heating is low relative to lens heating; ever tightening overlay requirements imply that the distortions due to wafer heating will quickly become a significant part of the overlay budget. In this work the effects, analysis and observations of wafer heating on contact and metal layers of the 14nm node are presented. On product wafers it manifests as a difference in the scan up and scan down signatures between layers. An experiment to further understand wafer heating is performed with a test reticle that is used to monitor scanner performance.

  7. Optical metrology solutions for 10nm films process control challenges

    NASA Astrophysics Data System (ADS)

    Mahendrakar, Sridhar; Vaid, Alok; Venkataraman, Kartik; Lenahan, Michael; Seipp, Steven; Fang, Fang; Saxena, Shweta; Hu, Dawei; Yoon, Nam Hee; Song, Da; Camp, Janay; Ren, Zhou

    2016-03-01

    Controlling thickness and composition of gate stack layers in logic and memory devices is critical to ensure transistor performance meets requirements, especially at 10nm node due to the 3-d geometry of devices and tight process budget. It has become necessary to measure and control each layer in the gate stack before and after dielectric and metal gate deposition sequences. A typical gate stack can have 5-7 layers including the interfacial layer, high-k dielectric, metal gate stack, work function layers, and cap layers. Similarly, PMOS channel strain is controlled using a graded SixGe1-x stack grown epitaxially over fins in the source/drain regions. This graded stack can have 2-4 layers of different thicknesses and Ge concentrations. This paper discusses the benefit of using spectroscopic ellipsometry with multiple angles of incidence to accurately and precisely determine the thickness of individual layers in critical gate layer stacks at various process steps on planar and grating surfaces. We will also show the benefit of using an advanced laser-based ellipsometer, for ultra-precise measurement of the gate interfacial layer oxides.

  8. Automatic detection of pelvic lymph nodes using multiple MR sequences

    NASA Astrophysics Data System (ADS)

    Yan, Michelle; Lu, Yue; Lu, Renzhi; Requardt, Martin; Moeller, Thomas; Takahashi, Satoru; Barentsz, Jelle

    2007-03-01

    A system for automatic detection of pelvic lymph nodes is developed by incorporating complementary information extracted from multiple MR sequences. A single MR sequence lacks sufficient diagnostic information for lymph node localization and staging. Correct diagnosis often requires input from multiple complementary sequences which makes manual detection of lymph nodes very labor intensive. Small lymph nodes are often missed even by highly-trained radiologists. The proposed system is aimed at assisting radiologists in finding lymph nodes faster and more accurately. To the best of our knowledge, this is the first such system reported in the literature. A 3-dimensional (3D) MR angiography (MRA) image is employed for extracting blood vessels that serve as a guide in searching for pelvic lymph nodes. Segmentation, shape and location analysis of potential lymph nodes are then performed using a high resolution 3D T1-weighted VIBE (T1-vibe) MR sequence acquired by Siemens 3T scanner. An optional contrast-agent enhanced MR image, such as post ferumoxtran-10 T2*-weighted MEDIC sequence, can also be incorporated to further improve detection accuracy of malignant nodes. The system outputs a list of potential lymph node locations that are overlaid onto the corresponding MR sequences and presents them to users with associated confidence levels as well as their sizes and lengths in each axis. Preliminary studies demonstrates the feasibility of automatic lymph node detection and scenarios in which this system may be used to assist radiologists in diagnosis and reporting.

  9. Novel method and applications for labeling and identifying lymph nodes

    NASA Astrophysics Data System (ADS)

    Kiraly, Atilla P.; Naidich, David P.; Guendel, Lutz; Zhang, Li; Novak, Carol L.

    2007-03-01

    The lymphatic system comprises a series of interconnected lymph nodes that are commonly distributed along branching or linearly oriented anatomic structures. Physicians must evaluate lymph nodes when staging cancer and planning optimal paths for nodal biopsy. This process requires accurately determining the lymph node's position with respect to major anatomical landmarks. In an effort to standardize lung cancer staging, The American Joint Committee on Cancer (AJCC) has classified lymph nodes within the chest into 4 groups and 14 sub groups. We present a method for automatically labeling lymph nodes according to this classification scheme, in order to improve the speed and accuracy of staging and biopsy planning. Lymph nodes within the chest are clustered around the major blood vessels and the airways. Our fully automatic labeling method determines the nodal group and sub-group in chest CT data by use of computed airway and aorta centerlines to produce features relative to a given node location. A classifier then determines the label based upon these features. We evaluate the efficacy of the method on 10 chest CT datasets containing 86 labeled lymph nodes. The results are promising with 100% of the nodes assigned to the correct group and 76% to the correct sub-group. We anticipate that additional features and training data will further improve the results. In addition to labeling, other applications include automated lymph node localization and visualization. Although we focus on chest CT data, the method can be generalized to other regions of the body as well as to different imaging modalities.

  10. Information spreading in Delay Tolerant Networks based on nodes' behaviors

    NASA Astrophysics Data System (ADS)

    Wu, Yahui; Deng, Su; Huang, Hongbin

    2014-07-01

    Information spreading in DTNs (Delay Tolerant Networks) adopts a store-carry-forward method, and nodes receive the message from others directly. However, it is hard to judge whether the information is safe in this communication mode. In this case, a node may observe other nodes' behaviors. At present, there is no theoretical model to describe the varying rule of the nodes' trusting level. In addition, due to the uncertainty of the connectivity in DTN, a node is hard to get the global state of the network. Therefore, a rational model about the node's trusting level should be a function of the node's own observing result. For example, if a node finds k nodes carrying a message, it may trust the information with probability p(k). This paper does not explore the real distribution of p(k), but instead presents a unifying theoretical framework to evaluate the performance of the information spreading in above case. This framework is an extension of the traditional SI (susceptible-infected) model, and is useful when p(k) conforms to any distribution. Simulations based on both synthetic and real motion traces show the accuracy of the framework. Finally, we explore the impact of the nodes' behaviors based on certain special distributions through numerical results.

  11. Lymph node ratio may predict the benefit of postoperative radiotherapy in node-positive cervical cancer.

    PubMed

    Zhou, Juan; Chen, Qiong-Hua; Wu, San-Gang; He, Zhen-Yu; Sun, Jia-Yuan; Li, Feng-Yan; Lin, Huan-Xin; You, Ke-Li

    2016-05-17

    The standard treatment for node-positive cervical cancer after radical hysterectomy is pelvic radiotherapy and concurrent chemotherapy. Given the potential toxicity of postoperative radiotherapy, we used the lymph node ratio (LNR) to assess the benefit of postoperative radiotherapy in lymph node-positive cervical cancer patients. Data from the Surveillance Epidemiology and End Results database (1988-2010) were analyzed using Kaplan-Meier and Cox regression proportional hazard analysis. A total of 2,269 eligible patients were identified (median follow-up, 78.0 months); 1,863 (82.1%) patients received postoperative radiotherapy. In both univariate and multivariate analysis multivariate analysis, a higher LNR was significantly associated with a poorer outcome. A LNR > 0.16 was associated with poorer cervical cancer-related survival (CCSS) (hazard Ratio [HR] 1.376, confidence interval [CI] 1.082-1.750; P < 0.001) and overall survival (OS) (HR 1.287, CI 1.056-1.569; P = 0.012). Postoperative radiotherapy was only associated with survival benefits in patients with a LNR > 0.16 (CCSS, P < 0.001; OS, P < 0.001) and not in patients with a LNR ≤ 0.16 (CCSS, P = 0.620; OS, P = 0.167); these trends were not affected by number of removed lymph nodes. A higher LNR is associated with a poorer survival in lymph node-positive cervical cancer. The survival benefits of postoperative radiotherapy appear to be limited to patients with a LNR > 0.16. PMID:27105541

  12. Phase and magnetic properties evolutions of Y3-x(CaZr)xFe5-xO12 by the sol-gel method

    NASA Astrophysics Data System (ADS)

    Wang, Lili; Huang, Zhigao; Zhang, Huiqin; Yu, Ruibing

    2015-12-01

    In this work, Y3-x(CaZr)xFe5-xO12 (CaZr)x:YIG) were prepared by the sol-gel method. High substituted (CaZr)x:YIG nanoparticles with x up to 0.7 were obtained at 1080 °C, below the melting point of Cu electrode. The average sizes calculated by Scherrer formula decreased from 92.4 nm to 70.0 nm when the substitution amount increased from 0 to 0.7, which was consistent with the results of TEM. The sintering temperature required to form pure garnet phase increased from 690 °C to 1065 °C as the substitution amount x increased from 0 to 0.7 for probable homogeneity destruction by Ca2+ and Zr4+. The maximum saturation magnetization (Ms) of 29.8 emu/g was achieved at x=0.3. The enhancement of Ms was attributed to the quantity reduction of Fe3+ in a-site and the increase of net magnetic moment. The observed decline in Ms for the samples with x>0.3 might be attributed to the weakness of super-exchange interaction by changing the angle and length of Fe-O-Fe bonds too much. The complex variations of the coecivities (Hc) indicated the crystal structure from single domain to multiple domains as the sintering temperature increased. Comparing the properties of the samples with x=0 and 0.3, it seemed that the substitution had the influence not only on the formation temperature, but also on the critical size of single domain and the temperature of the critical size emerging.

  13. Chromosomes without a 30-nm chromatin fiber

    PubMed Central

    Joti, Yasumasa; Hikima, Takaaki; Nishino, Yoshinori; Kamada, Fukumi; Hihara, Saera; Takata, Hideaki; Ishikawa, Tetsuya; Maeshima, Kazuhiro

    2012-01-01

    How is a long strand of genomic DNA packaged into a mitotic chromosome or nucleus? The nucleosome fiber (beads-on-a-string), in which DNA is wrapped around core histones, has long been assumed to be folded into a 30-nm chromatin fiber, and a further helically folded larger fiber. However, when frozen hydrated human mitotic cells were observed using cryoelectron microscopy, no higher-order structures that included 30-nm chromatin fibers were found. To investigate the bulk structure of mitotic chromosomes further, we performed small-angle X-ray scattering (SAXS), which can detect periodic structures in noncrystalline materials in solution. The results were striking: no structural feature larger than 11 nm was detected, even at a chromosome-diameter scale (~1 μm). We also found a similar scattering pattern in interphase nuclei of HeLa cells in the range up to ~275 nm. Our findings suggest a common structural feature in interphase and mitotic chromatins: compact and irregular folding of nucleosome fibers occurs without a 30-nm chromatin structure. PMID:22825571

  14. 810nm, 980nm, 1470nm and 1950nm diode laser comparison: a preliminary "ex vivo" study on oral soft tissues

    NASA Astrophysics Data System (ADS)

    Fornaini, Carlo; Merigo, Elisabetta; Sozzi, Michele; Selleri, Stefano; Vescovi, Paolo; Cucinotta, Annamaria

    2015-02-01

    The introduction of diode lasers in dentistry has several advantages, mainly consisting on the reduced size, reduced cost and possibility to beam delivering by optical fibers. At the moment the two diode wavelengths normally utilized in the dental field are 810 and 980 nm for soft tissues treatments. The aim of this study was to compare the efficacy of four different diode wavelengths: 810, 980, 1470 and 1950 nm diode laser for the ablation of soft tissues. Several samples of veal tongue were exposed to the four different wavelengths, at different fluences. The internal temperature of the soft tissues, in the area close to the beam, was monitored with thermocouple during the experiment. The excision quality of the exposed samples have been characterized by means of an optical microscope. Tissue damages and the cut regularity have been evaluated on the base of established criteria. The lowest thermal increase was recorded for 1950 nm laser. Best quality and speed of incision were obtained by the same wavelength. By evaluating epithelial, stromal and vascular damages for all the used wavelengths, the best result, in terms of "tissue respect", have been obtained for 1470 and 1950 nm exposures. From the obtained results 1470 and 1950 nm diode laser showed to be the best performer wavelengths among these used in this "ex vivo" study, probably due to their greatest affinity to water.

  15. Radiation Failures in Intel 14nm Microprocessors

    NASA Technical Reports Server (NTRS)

    Bossev, Dobrin P.; Duncan, Adam R.; Gadlage, Matthew J.; Roach, Austin H.; Kay, Matthew J.; Szabo, Carl; Berger, Tammy J.; York, Darin A.; Williams, Aaron; LaBel, K.; Ingalls, James D.

    2016-01-01

    In this study the 14 nm Intel Broadwell 5th generation core series 5005U-i3 and 5200U-i5 was mounted on Dell Inspiron laptops, MSI Cubi and Gigabyte Brix barebones and tested with Windows 8 and CentOS7 at idle. Heavy-ion-induced hard- and catastrophic failures do not appear to be related to the Intel 14nm Tri-Gate FinFET process. They originate from a small (9 m 140 m) area on the 32nm planar PCH die (not the CPU) as initially speculated. The hard failures seem to be due to a SEE but the exact physical mechanism has yet to be identified. Some possibilities include latch-ups, charge ion trapping or implantation, ion channels, or a combination of those (in biased conditions). The mechanism of the catastrophic failures seems related to the presence of electric power (1.05V core voltage). The 1064 nm laser mimics ionization radiation and induces soft- and hard failures as a direct result of electron-hole pair production, not heat. The 14nm FinFET processes continue to look promising for space radiation environments.

  16. Bulk dense fine-grain (1-x)BiScO{sub 3}-xPbTiO{sub 3} ceramics with high piezoelectric coefficient

    SciTech Connect

    Zou Tingting; Wang Xiaohui; Wang Han; Zhong Caifu; Li Longtu; Chen, I-W.

    2008-11-10

    High density fine grain (1-x)BiScO{sub 3}-xPbTiO{sub 3} ceramics were successfully prepared by two-step sintering and their ferroelectric properties were investigated. Experimental evidence indicates the existence of a morphotropic phase boundary at the composition x=0.635, which exhibits a piezoelectric coefficient d{sub 33} of 700 pC/N at room temperature, significantly higher than the reported values to date. Furthermore, a higher electromechanical coupling factor Kp=0.632 and a larger remnant polarization P{sub r}=47.3 {mu}C/cm{sup 2} were obtained. The paraelectric-to-ferroelectric phase transition occurs at 446 deg. C, slightly lower than in the coarse grain ceramics with a similar composition, suggesting a grain size effect. The local effective piezoelectric coefficient d{sub 33}* was estimated to be 795 pC/N at 2.29 V, measured by scanning probe microscopy. Further atomic force microscope observation revealed the existence of 90 deg. domains of about 60-70 nm in width, confirming the previous results that small domain structure enhances the piezoelectric properties.

  17. Study of magnetic behavior in hexagonal-YMn1-xFexO3 (x=0 and 0.2) nanoparticles using remanent magnetization curves

    NASA Astrophysics Data System (ADS)

    Chauhan, Samta; Singh, Amit Kumar; Srivastava, Saurabh Kumar; Chandra, Ramesh

    2016-09-01

    We have studied the magnetic behavior of YMn1-xFexO3 (x=0 and 0.2) nanoparticles synthesized by conventional solid state reaction method. The as-synthesized nanoparticles were found to have hexagonal phase with P63cm space group confirmed by X-Ray diffraction. The particle size was found to be ~70 nm as confirmed by both X-Ray diffraction and Transmission Electron Microscopy. DC magnetization and memory effect measurements imply that the h-YMnO3 nanoparticles bear a resemblance to super spin-glass state following de Almeida-Thouless like behavior which is being suppressed by Fe-doping. The Fe-doping in YMnO3 enhances the antiferromagnetic (AFM) transition temperature TN to ~79 K and induces a new magnetic state due to the surface spins which is realized as diluted antiferromagnet in a field (DAFF) as explored by the thermoremanent and isothermoremanent magnetization measured with different applied magnetic field.

  18. Dysprosium doping induced shape and magnetic anisotropy of Fe3-xDyxO4 (x=0.01-0.1) nanoparticles

    NASA Astrophysics Data System (ADS)

    Jain, Richa; Luthra, Vandna; Gokhale, Shubha

    2016-09-01

    The effect of dysprosium doping on evolution of structural and magnetic properties of magnetite (Fe3O4) nanoparticles is reported. A standard route of co-precipitation was used for the synthesis of undoped and doped magnetite nanoparticles Fe3-xDyxO4 (x=0.0-0.1). Transmission electron microscopy (TEM) shows formation of round shaped particles with diameter in the range of 8-14 nm for undoped sample. On doping beyond x=0.01, the formation of rod like structures is initiated along with the round shaped particles. The number of rods is found to increase with increasing doping concentration. Magnetic characterization using Vibrating Sample Magnetometer (VSM) revealed doping dependent magnetic properties which can be correlated with the crystallite size as determined from X-ray diffraction (XRD). Enhancement in the saturation magnetization in the initial stages of doping can be explained on the basis of incorporation of Dy3+ ions in the inverse spinel structure at the octahedral site in place of Fe3+ ions. Subsequent decrease in saturation magnetization observed beyond x=0.03 could be attributed to precipitation of excess Dy in form of dysprosium ferrite phase.

  19. Brightly Luminescent and Color-Tunable Colloidal CH3NH3PbX3 (X = Br, I, Cl) Quantum Dots: Potential Alternatives for Display Technology.

    PubMed

    Zhang, Feng; Zhong, Haizheng; Chen, Cheng; Wu, Xian-gang; Hu, Xiangmin; Huang, Hailong; Han, Junbo; Zou, Bingsuo; Dong, Yuping

    2015-04-28

    Organometal halide perovskites are inexpensive materials with desirable characteristics of color-tunable and narrow-band emissions for lighting and display technology, but they suffer from low photoluminescence quantum yields at low excitation fluencies. Here we developed a ligand-assisted reprecipitation strategy to fabricate brightly luminescent and color-tunable colloidal CH3NH3PbX3 (X = Br, I, Cl) quantum dots with absolute quantum yield up to 70% at room temperature and low excitation fluencies. To illustrate the photoluminescence enhancements in these quantum dots, we conducted comprehensive composition and surface characterizations and determined the time- and temperature-dependent photoluminescence spectra. Comparisons between small-sized CH3NH3PbBr3 quantum dots (average diameter 3.3 nm) and corresponding micrometer-sized bulk particles (2-8 μm) suggest that the intense increased photoluminescence quantum yield originates from the increase of exciton binding energy due to size reduction as well as proper chemical passivations of the Br-rich surface. We further demonstrated wide-color gamut white-light-emitting diodes using green emissive CH3NH3PbBr3 quantum dots and red emissive K2SiF6:Mn(4+) as color converters, providing enhanced color quality for display technology. Moreover, colloidal CH3NH3PbX3 quantum dots are expected to exhibit interesting nanoscale excitonic properties and also have other potential applications in lasers, electroluminescence devices, and optical sensors. PMID:25824283

  20. Transport Properties Of Fe{sub 3-x}Ti{sub x}O{sub 4}(x = 0.0 and 0.0206) Epitaxial Thin Films

    SciTech Connect

    Varshney, Dinesh; Yogi, Arvind; Verma, K.; Phase, D. M.

    2011-07-15

    Fe{sub 3-x}Ti{sub x}O{sub 4}(x = 0 and 0.0206) epitaxial thin films with thickness of 150 nm were prepared by pulsed-laser deposition technique on SrTiO{sub 3}(100), {alpha}-Al{sub 2}O{sub 3}(0001), Si (111) and Float Glass substrates. X-ray diffraction (XRD) pattern infers that parent and Ti doped magnetites are grown in single phase with (111) orientation. The Verwey transition temperature for Fe{sub 3}O{sub 4} thin films are 121 K (Float Glass), 123 K (SrTiO{sub 3}), 123.5 K ({alpha}-Al{sub 2}O{sub 3}) and 128 K (Si). It is shown that the Ti doping at B site results in the disappearance of Verwey transition in {l_brace}Ti{sub x}{sup 4+}Fe{sub 1-x}{sup 3+}Fe{sup 2+}{r_brace}O{sub 4}{sup 2-}.