Science.gov

Sample records for 4-h facts-in-brief providing

  1. Maine 4-H Afterschool Academy--A Professional Development Opportunity for Out-of-School-Time Providers

    ERIC Educational Resources Information Center

    Lobley, Jennifer; Ouellette, Kristy L.

    2013-01-01

    The Maine 4-H Afterschool Academy trained 369 after-school and out of school time providers in 2011. This easy-to-adapt professional development opportunity used blended learning, a combination of in-person and Web-based opportunities. Providers successfully learned concepts and practical knowledge regarding 4-H, specifically 4-H Science. In…

  2. The complete genome sequence of the methanogenic archaeon ISO4-H5 provides insights into the methylotrophic lifestyle of a ruminal representative of the Methanomassiliicoccales.

    PubMed

    Li, Yang; Leahy, Sinead C; Jeyanathan, Jeyamalar; Henderson, Gemma; Cox, Faith; Altermann, Eric; Kelly, William J; Lambie, Suzanne C; Janssen, Peter H; Rakonjac, Jasna; Attwood, Graeme T

    2016-01-01

    Methane emissions from agriculture represent around 9 % of global anthropogenic greenhouse emissions. The single largest source of this methane is animal enteric fermentation, predominantly from ruminant livestock where it is produced mainly in their fermentative forestomach (or reticulo-rumen) by a group of archaea known as methanogens. In order to reduce methane emissions from ruminants, it is necessary to understand the role of methanogenic archaea in the rumen, and to identify their distinguishing characteristics that can be used to develop methane mitigation technologies. To gain insights into the role of methylotrophic methanogens in the rumen environment, the genome of a methanogenic archaeon has been sequenced. This isolate, strain ISO4-H5, was isolated from the ovine rumen and belongs to the order Methanomassiliicoccales. Genomic analysis suggests ISO4-H5 is an obligate hydrogen-dependent methylotrophic methanogen, able to use methanol and methylamines as substrates for methanogenesis. Like other organisms within this order, ISO4-H5 does not possess genes required for the first six steps of hydrogenotrophic methanogenesis. Comparison between the genomes of different members of the order Methanomassiliicoccales revealed strong conservation in energy metabolism, particularly in genes of the methylotrophic methanogenesis pathway, as well as in the biosynthesis and use of pyrrolysine. Unlike members of Methanomassiliicoccales from human sources, ISO4-H5 does not contain the genes required for production of coenzyme M, and so likely requires external coenzyme M to survive. PMID:27602181

  3. 4-H and Iowa.

    ERIC Educational Resources Information Center

    Gore, Deborah, Ed.

    1988-01-01

    This issue focuses on Iowa's role in the historical development of the 4-H youth program. "Roots in Iowa" and "Jessie Field Shambaugh: The Mother of 4-H" (J. Friedel) describes the rural Iowan roots of the 4-H program, which today is located in 80 different countries, and give the story of its founder. Jessie Shambaugh, a rural Iowa teacher and…

  4. 4-H Club Goat Guide.

    ERIC Educational Resources Information Center

    Brown, R. Kipp

    This guide provides information for 4-H Club members who have decided on a club goat project. Topics include general information in the following areas: show rules; facilities and equipment (barns/sheds, fences, feeders, water containers, and equipment); selection (structural correctness, muscle, volume and capacity, style and balance, and growth…

  5. An allolactose trapped at the lacZ β-galactosidase active site with its galactosyl moiety in a (4)H3 conformation provides insights into the formation, conformation, and stabilization of the transition state.

    PubMed

    Wheatley, Robert W; Huber, Reuben E

    2015-12-01

    When lactose was incubated with G794A-β-galactosidase (a variant with a "closed" active site loop that binds transition state analogs well) an allolactose was trapped with its Gal moiety in a (4)H3 conformation, similar to the oxocarbenium ion-like conformation expected of the transition state. The numerous interactions formed between the (4)H3 structure and β-galactosidase indicate that this structure is representative of the transition state. This conformation is also very similar to that of d-galactono-1,5-lactone, a good transition state analog. Evidence indicates that substrates take up the (4)H3 conformation during migration from the shallow to the deep mode. Steric forces utilizing His418 and other residues are important for positioning the O1 leaving group into a quasi-axial position. An electrostatic interaction between the O5 of the distorted Gal and Tyr503 as well as C-H-π bonds with Trp568 are also significant. Computational studies of the energy of sugar ring distortion show that the β-galactosidase reaction itinerary is driven by energetic considerations in utilization of a (4)H3 transition state with a novel (4)C1-(4)H3-(4)C1 conformation itinerary. To our knowledge, this is the first X-ray crystallographic structural demonstration that the transition state of a natural substrate of a glycosidase has a (4)H3 conformation. PMID:26291713

  6. National 4-H Common Measures: Initial Evaluation from California 4-H

    ERIC Educational Resources Information Center

    Lewis, Kendra M.; Horrillo, Shannon J.; Widaman, Keith; Worker, Steven M.; Trzesniewski, Kali

    2015-01-01

    Evaluation is a key component to learning about the effectiveness of a program. This article provides descriptive statistics of the newly developed National 4-H Common Measures (science, healthy living, citizenship, and youth development) based on data from 721 California 4-H youth. The measures were evaluated for their reliability and validity of…

  7. The Preschooler: 4-H Child Development Project.

    ERIC Educational Resources Information Center

    Francis, Connie M.

    Intended for 4-H participants who plan and implement activities in the area of child development, this booklet provides a study guide to help young learners: (1) gain understanding of a preschool child's physical, mental, social, and emotional growth; (2) learn to care for a preschooler and promote preschoolers' feelings of security and safety;…

  8. Recruiting 4-H Volunteer Leaders.

    ERIC Educational Resources Information Center

    National Four-H Club Foundation, Washington, DC.

    The guide is intended to assist 4-H Club extension workers in recruiting volunteer adult and youth leaders. It discusses: why volunteers serve (organizational identity, desire to serve, involvement of other family members, future opportunities and obligations, community status, self interest, and public opinion); how to recruit (person-to-person…

  9. Embracing Scientific and Engineering Practices in 4-H

    ERIC Educational Resources Information Center

    Worker, Steven M.

    2013-01-01

    The 4-H Science Initiative has renewed efforts to strengthen 4-H programmatic and evaluation efforts in science and engineering education. A fundamental component of this initiative is to provide opportunities to youth to aid in their development of science process skills; however, emerging research stresses the importance of engaging youth in…

  10. Adult 4-H Volunteer Empowerment in 4-H Youth Development Settings

    ERIC Educational Resources Information Center

    Olsen, Pamela

    2009-01-01

    The primary purpose of this study was to determine which factors related to adult 4-H volunteer empowerment in 4-H youth development settings. This study examined the relationship of adult 4-H volunteers' perceived leadership styles of Oregon 4-H Youth Development Educators (YDE) to the adult 4-H volunteer sense of empowerment. In addition,…

  11. Strengthening 4-H by Analyzing Enrollment Data

    ERIC Educational Resources Information Center

    Hamilton, Stephen F.; Northern, Angela; Neff, Robert

    2014-01-01

    The study reported here used data from the ACCESS 4-H Enrollment System to gain insight into strengthening New York State's 4-H programming. Member enrollment lists from 2009 to 2012 were analyzed using Microsoft Excel to determine trends and dropout rates. The descriptive data indicate declining 4-H enrollment in recent years and peak…

  12. Engaging Library Partners in 4-H Programming

    ERIC Educational Resources Information Center

    Fields, Nia Imani; Rafferty, Elizabeth

    2012-01-01

    When most people think about 4-H, they remember county fairs, livestock programs, and agricultural education. While these programs are still prominent, 4-H has grown in order to meet the growing demands of today's youth. The organization has expanded services and programs to serve rural, suburban, and urban youth in every state in the U.S. 4-H is…

  13. Novel Analogues of (R)-5-(Methylamino)-5,6-dihydro-4H-imidazo[4,5,1-ij]quinolin-2(1H)-one (Sumanirole) Provide Clues to Dopamine D2/D3 Receptor Agonist Selectivity.

    PubMed

    Zou, Mu-Fa; Keck, Thomas M; Kumar, Vivek; Donthamsetti, Prashant; Michino, Mayako; Burzynski, Caitlin; Schweppe, Catherine; Bonifazi, Alessandro; Free, R Benjamin; Sibley, David R; Janowsky, Aaron; Shi, Lei; Javitch, Jonathan A; Newman, Amy Hauck

    2016-04-14

    Novel 1-, 5-, and 8-substituted analogues of sumanirole (1), a dopamine D2/D3 receptor (D2R/D3R) agonist, were synthesized. Binding affinities at both D2R and D3R were higher when determined in competition with the agonist radioligand [(3)H]7-hydroxy-N,N-dipropyl-2-aminotetralin (7-OH-DPAT) than with the antagonist radioligand [(3)H]N-methylspiperone. Although 1 was confirmed as a D2R-preferential agonist, its selectivity in binding and functional studies was lower than previously reported. All analogues were determined to be D2R/D3R agonists in both GoBRET and mitogenesis functional assays. Loss of efficacy was detected for the N-1-substituted analogues at D3R. In contrast, the N-5-alkyl-substituted analogues, and notably the n-butyl-arylamides (22b and 22c), all showed improved affinity at D2R over 1 with neither a loss of efficacy nor an increase in selectivity. Computational modeling provided a structural basis for the D2R selectivity of 1, illustrating how subtle differences in the highly homologous orthosteric binding site (OBS) differentially affect D2R/D3R affinity and functional efficacy. PMID:27035329

  14. Community Development: A 4-H Intern Report.

    ERIC Educational Resources Information Center

    Scheneman, C. Stephen

    State progress reports on the 4-H/Community Development program, a 1973 nationwide Federally sponsored program facilitating youth in community decision-making processes, indicate that the program appears to be evolving into a viable and integral part of the total 4-H program. Although the report describes unique program features of various States,…

  15. Holding on to 4-H Leaders.

    ERIC Educational Resources Information Center

    Hass, Glen

    1979-01-01

    Data from a survey of 4-H Club leaders in Saskatchewan, Canada, were used to determine the effect of attendance at leadership training events on leaders' decisions to re-enroll or discontinue. It was found that involvement in 4-H activities, supported by leadership training, increased leaders' satisfaction and likelihood of re-enrolling. (MF)

  16. Strengthening 4-H Program Communication through Technology

    ERIC Educational Resources Information Center

    Robideau, Kari; Santl, Karyn

    2011-01-01

    Advances in technology are transforming how youth and parents interact with programs. The Strengthening 4-H Communication through Technology project was implemented in eight county 4-H programs in Northwest Minnesota. This article outlines the intentional process used to effectively implement technology in program planning. The project includes:…

  17. Relationships between 4-H Volunteer Leader Competencies and Skills Youth Learn in 4-H Programs

    ERIC Educational Resources Information Center

    Radhakrishna, Rama; Ewing, John C.

    2011-01-01

    This article examined the relationships between 4-H volunteer leader competencies and skills youth learn in 4-H. Using a descriptive-correlational research, the study reported found significant relationships between leadership competencies and skills youth learn in 4-H. Regression analysis revealed that two variables--skills and…

  18. Middle Childhood: 4-H Child Development Project.

    ERIC Educational Resources Information Center

    Francis, Connie M.

    Part of a series for 4-H members between 9 and 19 years of age, this age-graded guide to the development of 6-, 7-, and 8-year-olds aims to help 4-H members who are children and adolescents themselves: (1) understand the physical, mental, social, and emotional development of children in middle childhood; (2) learn to care for a child in middle…

  19. The Big E (Energy). 4-H Member Guide, Unit 2.

    ERIC Educational Resources Information Center

    Caldwell, William; And Others

    This activity and record book is designed for unit 2 (ages 12-14) of the Nebraska 4-H Energy Project. Aims, energy attitudes to be developed, and instructions are provided for each activity. Activities include: (1) a word search of energy-related words (with definitions provided); (2) determining fuel waste; (3) reading electric/gas meters and…

  20. SADDLE HORSE AND OTHER LIVESTOCK ADVISORS' PERCEPTIONS OF 4-H CLUB WORK IN OHIO.

    ERIC Educational Resources Information Center

    GROVES, ROBERT H.

    PERCEPTIONS AND UNDERSTANDINGS OF 4-H OBJECTIVES AND PROGRAMS OF 4-H SADDLE HORSE ADVISORS WERE COMPARED WITH THOSE OF OTHER LIVESTOCK ADVISORS IN NORTHEASTERN AND SOUTHWESTERN DISTRICTS OF OHIO. DATA WERE COLLECTED BY QUESTIONNAIRES FROM 90 SADDLE HORSE AND 133 OTHER LIVESTOCK ADVISORS. STATE 4-H STAFF AND SUPERVISORS PROVIDED CORRECT ANSWERS.…

  1. The Big E (Energy). 4-H Member Guide, Unit 3.

    ERIC Educational Resources Information Center

    Caldwell, William; And Others

    This activity and record book is designed for unit 3 (ages 15-19) of the Nebraska 4-H Energy Project. Aims, energy attitudes to be developed, and instructions are provided for each activity. Activities include: (1) determining ways to reduce energy waste with hot water heaters; (2) making personal choices about using appliances; (3) conducting a…

  2. A Phenomenological Look at 4-H Volunteer Motives for Service

    ERIC Educational Resources Information Center

    Schrock, Jessalyn; Kelsey, Kathleen D.

    2013-01-01

    Volunteers play a vital role in 4-H programs. Without their service, many programs would not be possible. Understanding volunteer motives provides Extension educators with tools for finding high-quality volunteers. The research reported here used McClelland's (1985) framework for motivation (affiliation, achievement, and power) and…

  3. Multi-state 4-H energy program

    SciTech Connect

    Bakker, U.B.; Garthe, J.W.

    1983-06-01

    Through Agricultural Engineering 4-H Energy Programs, youth can be educated to gain knowledge, increase hands on skills, and incorporate energy-saving techniques into their lifestyle. In a pilot multi-state energy program tested by 13 states, youth increased their energy awareness.

  4. 4-H Science Inquiry Video Series

    ERIC Educational Resources Information Center

    Green, Jeremy W.; Black, Lynette; Willis, Patrick

    2013-01-01

    Studies support science inquiry as a positive method and approach for 4-H professionals and volunteers to use for teaching science-based practices to youth. The development of a science inquiry video series has yielded positive results as it relates to youth development education and science. The video series highlights how to conduct science-rich…

  5. Separates. 4-H Textile Science Advanced Project.

    ERIC Educational Resources Information Center

    Scholl, Jan F.

    This booklet, which was developed for use by 4-H club members in Pennsylvania, contains the information required to sew a two-piece nontailored outfit and/or a one-or two-piece dress. The following are among the topics covered: the difference between a fiber and a fabric; properties of different fibers and fabrics; common jacket, neckline, sleeve,…

  6. Water Worlds. 4-H Member's Guide M-5-18; 4-H Leaders Guide L-5-18.

    ERIC Educational Resources Information Center

    Hawkes, Janet E.; And Others

    This pocket folder of materials is designed to provide children aged 9 to 12 with an opportunity to explore and observe aquatic environments. The package includes a 4-H Leader's guide, member's guide, and supplementary materials. The leader's guide contains safety considerations, tips and techniques, and additional activities for getting started…

  7. Effectiveness of the 4-H Program as Perceived by Parents of 4-H Participants

    ERIC Educational Resources Information Center

    Radhakrishna, Rama; Foley, Caitlin; Ingram, Patreese; Ewing, John C.

    2013-01-01

    The study reported here examined the effectiveness of 4-H program as perceived by parents of program participants. Descriptive-correlational design was employed, with data collected using a mail survey. Parents perceived 4-H as an effective organization in teaching life skills to youth. Significant relationships were found between parents'…

  8. VIBRATIONALLY EXCITED C{sub 4}H

    SciTech Connect

    Cooksy, Andrew L.; Gottlieb, C. A.; Thaddeus, P.; Patel, Nimesh A.; Young, Ken H.; McCarthy, M. C.; Killian, T. C.

    2015-02-01

    Rotational spectra in four new excited vibrational levels of the linear carbon chain radical C{sub 4}H were observed in the millimeter band between 69 and 364 GHz in a low pressure glow discharge, and two of these were observed in a supersonic molecular beam between 19 and 38 GHz. All have rotational constants within 0.4% of the X{sup 2}Σ{sup +} ground vibrational state of C{sub 4}H and were assigned to new bending vibrational levels, two each with {sup 2}Σ and {sup 2}Π vibrational symmetry. The new levels are tentatively assigned to the 1ν{sub 6} and 1ν{sub 5} bending vibrational modes (both with {sup 2}Π symmetry), and the 1ν{sub 6}+1ν{sub 7} and 1ν{sub 5}+1ν{sub 6} combination levels ({sup 2}Σ symmetry) on the basis of the derived spectroscopic constants, relative intensities in our discharge source, and published laser spectroscopic and quantum calculations. Prior spectroscopic constants in the 1ν{sub 7} and 2ν{sub 7} levels were refined. Also presented are interferometric maps of the ground state and the 1ν{sub 7} level obtained with the Submillimeter Array (SMA) near 257 GHz which show that C{sub 4}H is present near the central star in IRC+10216. We found no evidence with the SMA for the new vibrationally excited levels of C{sub 4}H at a peak flux density averaged over a 3{sup ′′} synthesized beam of ⩾0.15 Jy/beam in the 294–296 and 304–306 GHz range, but it is anticipated that rotational lines in the new levels might be observed in IRC+10216 when ALMA attains its full design capability.

  9. Learnings and Recommendations to Advance 4-H Science Readiness

    ERIC Educational Resources Information Center

    Schmitt-McQuitty, Lynn; Carlos, Ramona; Smith, Martin H.

    2014-01-01

    The case study investigation reported here assessed California 4-H professionals' understanding of the essential components of effective 4-H Science programming as established by the National 4-H Science Mission Mandate. Using the 4-H Science Checklist as the basis for defining 4-H Science Readiness, academic and program staff were surveyed…

  10. Student Sampler: Facts in Brief on North Carolina

    ERIC Educational Resources Information Center

    North Carolina Department of Public Instruction, 2006

    2006-01-01

    This student sampler has been compiled to assist North Carolina students (4th and 8th grade) in their study of North Carolina. It is designed to introduce them to the people, places and events that have shaped North Carolina history. Topics include state symbols, descriptions of the state flag, and seal, the lyrics to the state song, and the…

  11. Student Sampler: Facts in Brief on North Carolina.

    ERIC Educational Resources Information Center

    North Carolina State Dept. of Public Instruction, Raleigh.

    This information sampler was compiled to assist students in their study of North Carolina. Every year North Carolina students must complete a special project on their state. The sampler was designed to introduce students to the people, places, and events that have shaped North Carolina's history. Topics in the sampler include state symbols,…

  12. 4-H PetPALS Juvenile Diversion Program Supports At-Risk Youth and Seniors

    ERIC Educational Resources Information Center

    Goble, Connie L.; Miller, Lucinda B.

    2014-01-01

    The 4-H PetPALS Juvenile Diversion Program provides a partnership opportunity with Extension and the juvenile court system to positively impact lives of at-risk youth. At-risk youth are taught by 4-H PetPALS adult volunteer leaders and 4-H PetPALS members to value and respect the human-animal bond, as well as to understand and empathize with…

  13. Minnesota 4-H Science of Agriculture Challenge: Infusing Agricultural Science and Engineering Concepts into 4-H Youth Development

    ERIC Educational Resources Information Center

    Rice, Joshua E.; Rugg, Bradley; Davis, Sharon

    2016-01-01

    Youth involved in 4-H projects have been engaged in science-related endeavors for years. Since 2006, 4-H has invested considerable resources in the advancement of science learning. The new Minnesota 4-H Science of Agriculture Challenge program challenges 4-H youth to work together to identify agriculture-related issues in their communities and to…

  14. Diversity Inclusion in 4-H Youth Programs: Examining the Perceptions among West Virginia 4-H Youth Professionals

    ERIC Educational Resources Information Center

    LaVergne, Douglas D.

    2013-01-01

    The study reported here sought to examine the perceptions of 4-H youth professionals towards diversity inclusion in 4-H youth programs. A majority of professionals positively reported that there are benefits for youth of color and youth with disabilities in 4-H youth programs. Respondents indicated that the lack of information about 4-H youth…

  15. Visual Display Study: National 4-H Center. A 4-H Intern Report.

    ERIC Educational Resources Information Center

    Farwell, Sanford W.

    An internship report cites ways in which the National 4-H Center could be more effective in a visual sense. The author suggests collecting the memorabilia already at the Center to form an historical museum and coordinating the historical items with present items. Impact areas, those with a lot of traffic, are discussed individually in terms of…

  16. Global 4-H Network: Laying the Groundwork for Global Extension Opportunities

    ERIC Educational Resources Information Center

    Major, Jennifer; Miller, Rhonda

    2012-01-01

    A descriptive study examining 4-H programs in Africa, Asia, and Europe was conducted to provide understanding and direction in the establishment of a Global 4-H Network. Information regarding structure, organizational support, funding, and programming areas was gathered. Programs varied greatly by country, and many partnered with other 4-H…

  17. The Big E (Energy). 4-H Energy Project. 4-H Member's E-Book, Unit 1.

    ERIC Educational Resources Information Center

    Caldwell, William; And Others

    This activity and record book is designed for unit 1 (ages 9-11) of the Nebraska 4-H Energy Project. In this project, members are required to: (1) use energy wisely by closing doors and turning off lights; (2) inspecting homes for energy use at least once; (3) judging the best use of lighting in a home; (4) sharing ideas about energy use in a…

  18. CPR: Purposeful Action. Putting New Life into 4-H.

    ERIC Educational Resources Information Center

    Jones, Deborah A.; Smith, William C.

    1988-01-01

    In Ohio, 4-H professionals found that it is necessary to conduct market research to have an effective program. Cardiopulmonary resuscitation (CPR) training has been successful in strengthening the 4-H position in the marketplace. (JOW)

  19. Hamsters?! What Does 4-H Stand for, Anyway?

    ERIC Educational Resources Information Center

    Grundeen, Brenda

    This paper briefly traces the history of 4-H youth development programs, explains what youth development is, and shows how the experiential learning model is used in 4-H. Begun over 75 years ago as a means of extending the learning of the land-grant university to rural youth, 4-H is part of the Cooperative Extension Service. The curriculum…

  20. Using Digital Classrooms to Conduct 4-H Club Meetings

    ERIC Educational Resources Information Center

    West, Patricia; Fuhrman, Nicholas E.; Morgan, A. Christian; Duncan, Dennis W.

    2012-01-01

    Using computer technology and digital classrooms to conduct 4-H Club meetings is an efficient way to continue delivering quality 4-H programming during times of limited resources and staff. Nineteen Junior and Senior 4-H'ers participated in seven digital classroom workshops using the Wimba Classroom application. These digital classroom…

  1. Factors Affecting Teen Involvement in Pennsylvania 4-H Programming

    ERIC Educational Resources Information Center

    Gill, Bart E.; Ewing, John C.; Bruce, Jacklyn A.

    2010-01-01

    The study reported here determined the factors that affect teen involvement in 4-H programming. The design of the study was descriptive and correlational in nature. Using a purposive sampling procedure, a survey questionnaire was distributed to all (N=214) 4-H members attending the 4-H State Leadership Conference. The major findings of the study…

  2. The 4-H Club Meeting: An Essential Youth Development Strategy

    ERIC Educational Resources Information Center

    Cassels, Alicia; Post, Liz; Nestor, Patrick I.

    2015-01-01

    The club meeting has served as a key delivery method for 4-H programming across the United States throughout its history. A survey of WV 4-H community club members reinforces the body of evidence that the 4-H club meeting is an effective vehicle for delivering positive youth learning opportunities within the umbrella of the Essential Elements of…

  3. Ultra high voltage MOS controlled 4H-SiC power switching devices

    NASA Astrophysics Data System (ADS)

    Ryu, S.; Capell, C.; Van Brunt, E.; Jonas, C.; O'Loughlin, M.; Clayton, J.; Lam, K.; Pala, V.; Hull, B.; Lemma, Y.; Lichtenwalner, D.; Zhang, Q. J.; Richmond, J.; Butler, P.; Grider, D.; Casady, J.; Allen, S.; Palmour, J.; Hinojosa, M.; Tipton, C. W.; Scozzie, C.

    2015-08-01

    Ultra high voltage (UHV, >15 kV) 4H-silicon carbide (SiC) power devices have the potential to significantly improve the system performance, reliability, and cost of energy conversion systems by providing reduced part count, simplified circuit topology, and reduced switching losses. In this paper, we compare the two MOS based UHV 4H-SiC power switching devices; 15 kV 4H-SiC MOSFETs and 15 kV 4H-SiC n-IGBTs. The 15 kV 4H-SiC MOSFET shows a specific on-resistance of 204 mΩ cm2 at 25 °C, which increased to 570 mΩ cm2 at 150 °C. The 15 kV 4H-SiC MOSFET provides low, temperature-independent, switching losses which makes the device more attractive for applications that require higher switching frequencies. The 15 kV 4H-SiC n-IGBT shows a significantly lower forward voltage drop (VF), along with reasonable switching performance, which make it a very attractive device for high voltage applications with lower switching frequency requirements. An electrothermal analysis showed that the 15 kV 4H-SiC n-IGBT outperforms the 15 kV 4H-SiC MOSFET for applications with switching frequencies of less than 5 kHz. It was also shown that the use of a carrier storage layer (CSL) can significantly improve the conduction performance of the 15 kV 4H-SiC n-IGBTs.

  4. 4H-SiC detectors for ultraviolet light monitoring

    NASA Astrophysics Data System (ADS)

    Mazzillo, M.; Sciuto, A.; Badalà, P.; Carbone, B.; Russo, A.; Coffa, S.

    2015-02-01

    Silicon Carbide (SiC) provides the unique property of near-perfect visible blindness and very high signal-to-noise ratio due to the high quantum efficiency and low dark current even at high temperature. These features make SiC the best available material for the manufacturing of visible blind semiconductor ultraviolet (UV) light detectors. Thanks to their properties, SiC detectors have been extensively used in fact for flame detection monitoring, UV sterilization and astronomy. Here we report on the electrical and optical performance of patterned thin metal film NiSi/4H-SiC vertical Schottky photodiodes with different semiconductor exposed area suitably designed for UV light monitoring.

  5. Why 4-H Members Leave: A Study of Discontinuance through Both Current 4-H Members and Former Members

    ERIC Educational Resources Information Center

    Chilek, Kevin Dwayne

    2012-01-01

    4-H members quit. It is part of every 4-H program, and according to the research, it is even part of growing up. If only we knew why they quit, we could possibly do something about it. To date, the reasons youth join 4-H have been more thoroughly researched than the reasons they quit. This study explores why youth choose to discontinue membership…

  6. Sewing Skills Progress Chart. 4-H Textile Science.

    ERIC Educational Resources Information Center

    Scholl, Jan F.

    This document, which was developed for use by Pennsylvania 4-H Club leaders and members, is a chart that can be used to help club members determine and document those sewing skills they already have and those they need to learn as they complete one or more 4-H Club sewing projects. The document begins with a note to club leaders and parents that…

  7. Council of Presidents: A Multifaceted Idea for 4-H

    ERIC Educational Resources Information Center

    Torretta, Alayne

    2015-01-01

    Communication between 4-H professionals and the youth they work with is an important part of a successful 4-H program. By creating a Council of Presidents comprised of officers of all the clubs in your county, you can increase communication while assuring your program addresses all four essential elements. The Council is also as a vehicle for…

  8. 4-H Participation and Science Interest in Youth

    ERIC Educational Resources Information Center

    Heck, Katherine; Carlos, Ramona M.; Barnett, Cynthia; Smith, Martin H.

    2012-01-01

    The study reported here investigated the impacts of participation in 4-H on young people's interest and participation in science. Survey data were collected from relatively large and ethnically diverse samples of elementary and high school-aged students in California. Results indicated that although elementary-grade 4-H members are not more…

  9. Camping with a Purpose...A 4-H Handbook.

    ERIC Educational Resources Information Center

    Heller, John H.; And Others

    The 4-H handbook focuses on factors to consider and things to be done when developing a camping program. Since the emphasis, structure, and administration of 4-H camping varies, the booklet is flexible enough to be adapted to different state, district, and county situations. Major topics are camping's importance to extension education,…

  10. Socialization of Youth: Role of the 4-H Professional.

    ERIC Educational Resources Information Center

    Freebern, John Robert

    Many professional 4-H staff members lack a sufficient background in the social sciences, fail to understand the complexity of the socialization task, and are not aware of the changes made by other socialization agents in the community. This paper is designed to help the professional 4-H adult worker improve his role as a socialization agent.…

  11. Stabilization of 4H hexagonal phase in gold nanoribbons

    PubMed Central

    Fan, Zhanxi; Bosman, Michel; Huang, Xiao; Huang, Ding; Yu, Yi; Ong, Khuong P.; Akimov, Yuriy A.; Wu, Lin; Li, Bing; Wu, Jumiati; Huang, Ying; Liu, Qing; Eng Png, Ching; Lip Gan, Chee; Yang, Peidong; Zhang, Hua

    2015-01-01

    Gold, silver, platinum and palladium typically crystallize with the face-centred cubic structure. Here we report the high-yield solution synthesis of gold nanoribbons in the 4H hexagonal polytype, a previously unreported metastable phase of gold. These gold nanoribbons undergo a phase transition from the original 4H hexagonal to face-centred cubic structure on ligand exchange under ambient conditions. Using monochromated electron energy-loss spectroscopy, the strong infrared plasmon absorption of single 4H gold nanoribbons is observed. Furthermore, the 4H hexagonal phases of silver, palladium and platinum can be readily stabilized through direct epitaxial growth of these metals on the 4H gold nanoribbon surface. Our findings may open up new strategies for the crystal phase-controlled synthesis of advanced noble metal nanomaterials. PMID:26216712

  12. Texas 4-H Agents' Perceptions of Selected Competencies in the 4-H Professional Research, Knowledge, and Competencies Model

    ERIC Educational Resources Information Center

    Harder, Amy; Wingenbach, Gary J.

    2008-01-01

    There are many competencies necessary for success as a 4-H agent. The 4-H Professional Research, Knowledge, and Competencies (PRKC) Model organizes competencies into six domains: (a) Youth Development, (b) Youth Program Development, (c) Volunteerism, (d) Partnerships, (e) Organizational Systems, and (f) Equity, Access and Opportunity (National 4-H…

  13. Sodium diffusion in 4H-SiC

    SciTech Connect

    Linnarsson, M. K. Hallén, A.

    2014-09-01

    Sodium diffusion has been studied in p-type 4H-SiC. Heat treatments have been performed from 1200 °C to 1800 °C for 1 min to 4 h. Secondary ion mass spectrometry has been used to measure the sodium distribution. We show that sodium has a considerable mobility at 1200 °C in p-type 4H-SiC. On the other hand for sodium atoms trapped at suitable sites the mobility is limited up to 1800 °C. Trap limited diffusion kinetics is suggested and an effective diffusivity has been extracted with an activation energy of 4 eV for sodium diffusion in p-type 4H-SiC.

  14. Isomer Energy Differences for the C4H3 and C4H5 Isomers UsingDiffusion Monte Carlo

    SciTech Connect

    Domin, D.; Lester Jr., W.A.; Whitesides, R.; Frenklach, M.

    2007-12-01

    A new diffusion Monte Carlo study is performed on the isomers of C{sub 4}H{sub 3} and C{sub 4}H{sub 5} emulating the methodology of a previous study [Int. J. Chem. Kinetics 33, 808 (2001)]. Using the same trial wave function form of the previous study, substantially different isomerization energies were found owing to the use of larger walker populations in the present work. The energy differences between the E and I isomers of C{sub 4}H{sub 3} were found to be 10.5 {+-} 0.5 kcal/mol and for C{sub 4}H{sub 5}, 9.7 {+-} 0.6 kcal/mol. These results are in reasonable accord with recent MRCI and CCSD(T) findings.

  15. A Beach and Dune Community. 4-H Marine Science. Member's Guide. Activity I. MSp 1.

    ERIC Educational Resources Information Center

    Auburn Univ., AL. Cooperative Extension Service.

    The investigation in this booklet is designed to provide 4-H members with opportunities to identify common plants and animals found on beaches and sand dunes and to determine the role of the plants and animals in this community. Learners are provided with a picture of a hypothetical beach and sand dune and a list of organisms (included in the…

  16. Density Functional Exploration of C4H3N Isomers.

    PubMed

    Custer, Thomas; Szczepaniak, Urszula; Gronowski, Marcin; Fabisiewicz, Emilia; Couturier-Tamburelli, Isabelle; Kołos, Robert

    2016-07-28

    Molecules having C4H3N stoichiometry are of astrophysical interest. Two of these, methylcyanoacetylene (CH3C3N) and its structural isomer allenyl cyanide (H2CCCHN), have been observed in interstellar space, while several more have been examined in laboratories. Here we describe, for a broad range of C4H3N isomers, density functional calculations (B3LYP/aug-cc-pVTZ) of molecular parameters including the energetics, geometries, rotational constants, electric dipole moments, polarizabilities, vibrational IR frequencies, IR absorption intensities, and Raman activities. Singlet-triplet splittings as well as singlet vertical electronic excitation energies are given for selected species. The identification of less stable C4H3N molecules, generated in ongoing spectroscopic experiments, relies heavily on these quantum chemical predictions. PMID:27341606

  17. Disruption of PF4/H multimolecular complex formation with a minimally anticoagulant heparin (ODSH)

    PubMed Central

    Joglekar, Manali V.; Quintana Diez, Pedro M.; Marcus, Stephen; Qi, Rui; Espinasse, Benjamin; Wiesner, Mark R.; Pempe, Elizabeth; Liu, Jian; Monroe, Dougald M.; Arepally, Gowthami M.

    2015-01-01

    Summary Recent studies have shown that ultra-large complexes (ULCs) of platelet factor 4 (PF4) and heparin (H) play an essential role in the pathogenesis of Heparin-Induced Thrombocytopenia (HIT), an immune-mediated disorder caused by PF4/H antibodies. Because antigenic PF4/H ULCs assemble through non-specific electrostatic interactions, we reasoned that disruption of charge-based interactions can modulate the immune response to antigen. We tested a minimally anticoagulant compound (2-O, 3-O desulfated heparin or ODSH) with preserved charge to disrupt PF4/H complex formation and immunogenicity. We show that ODSH disrupts complexes when added to pre-formed PF4/H ULCs and prevents ULC formation when incubated simultaneously with PF4 and UFH. In other studies, we show that excess ODSH reduces HIT antibody (Ab) binding in immunoassays and that PF4/ODSH complexes do not cross-react with HIT Abs. When ODSH and UFH are mixed at equimolar concentrations, we show that there is a negligible effect on amount of protamine required for heparin neutralization and reduced immunogenicity of PF4/UFH in the presence of ODSH. Taken together, these studies suggest that ODSH can be used concurrently with UFH to disrupt PF4/H charge interactions and provides a novel strategy to reduce antibody mediated complications in HIT. PMID:22318669

  18. Existence of {sub {lambda}}{sub {lambda}}{sup 4}H: A variational Monte Carlo search

    SciTech Connect

    Shoeb, Mohammad

    2005-02-01

    A variational Monte Carlo (VMC) calculation for the binding energy B{sub {lambda}}{sub {lambda}} of the lightest hypernucleus {sub {lambda}}{sub {lambda}}{sup 4}H has been performed in the four-body {lambda}{lambda}pn model. A range of input {lambda}{lambda} potentials of moderate strength produce a particle-stable {sub {lambda}}{sub {lambda}}{sup 4}H for the simulated NSC97e and f {lambda}N potentials, whereas the phenomenological Minnesota {lambda}N potential needs a much stronger {lambda}{lambda} potential to bind. The VMC results for B{sub {lambda}}{sub {lambda}} agree with the prediction of the stochastic variational model but contradict the recent Faddeev-Yakubovsky calculation. As reported earlier, B{sub {lambda}}{sub {lambda}} is sensitive to the triplet {lambda}N channel for a given {lambda}{lambda} potential. The B{sub {lambda}}{sub {lambda}} of {sub {lambda}}{sub {lambda}}{sup 4}H in the three-body {lambda}{lambda}d cluster model is consistent with but slightly lower than the Faddeev calculation. The VMC method predicts a stable {sub {lambda}}{sub {lambda}}{sup 4}H system in both models and thus offers the possibility of identifying {sub {lambda}}{sub {lambda}}{sup 4}H in a future extension of E906 or of a related experiment at KEK, provided the simulated potentials are true representations of realistic Nijmegen potentials.

  19. County Clustering for the California 4-H Youth Development Program: Impacts and Lessons Learned

    ERIC Educational Resources Information Center

    Subramaniam, Aarti; Dasher, Harry Steve; Young, Jane Chin

    2012-01-01

    In response to budgetary constraints, a new staffing structure, the Pilot Leadership Plan, was proposed for California's 4-H Youth Development Program. County clusters were formed, each led by a coordinator. The plan was piloted for 2 years to provide insight into how county clustering could support Extension staff to increase and enhance…

  20. 4-H Tractor Operator Program Teaches Employability Skills and Safety to Youth

    ERIC Educational Resources Information Center

    Barrett, Debra K.

    2013-01-01

    For Michigan State University Extension, the Berrien County 4-H Tractor Operator Program has provided tractor safety education to teens for over 30 years. The certification training satisfies current requirements for operation of a 20 PTO HP or greater agricultural tractor by 14- and 15-year-old youth employed on property "not" owned,…

  1. Performance statistics of the FORTRAN 4 /H/ library for the IBM system/360

    NASA Technical Reports Server (NTRS)

    Clark, N. A.; Cody, W. J., Jr.; Hillstrom, K. E.; Thieleker, E. A.

    1969-01-01

    Test procedures and results for accuracy and timing tests of the basic IBM 360/50 FORTRAN 4 /H/ subroutine library are reported. The testing was undertaken to verify performance capability and as a prelude to providing some replacement routines of improved performance.

  2. CareerSmarts. 4-H Mentoring Program. Agent's Handbook. Mentor's Handbook. Protege's Handbook.

    ERIC Educational Resources Information Center

    Locklear, Eddie L.

    The North Carolina 4-H CareerSmarts Program is designed to unite the public and private sectors to provide career education for young people. This packet contains three handbooks (for agents, proteges, and mentors) that explain the program and outline practical ways to conduct it. CareerSmarts consists of three phases. Phase one is conducted…

  3. Louisiana 4-H Seeds of Service School Gardens: A Descriptive View

    ERIC Educational Resources Information Center

    Cater, Melissa; Fox, Janet; Fletcher, Bobby Jr.

    2012-01-01

    Louisiana 4-H Seeds of Service School Gardens, a K-12 Learn and Serve Grant program, provides a descriptive view of how school gardens along with classroom instruction link curriculum to outdoor classrooms. The purpose of the process evaluation was to describe curriculum implementation fidelity, reach of the gardening program to participants, use…

  4. Formation of low-temperature cirrus from H2SO4/H2O aerosol droplets.

    PubMed

    Bogdan, A; Molina, M J; Sassen, K; Kulmala, M

    2006-11-23

    We present experimental results obtained with a differential scanning calorimeter (DSC) that indicate the small ice particles in low-temperature cirrus clouds are not completely solid but rather coated with an unfrozen H2SO4/H2O overlayer. Our results provide a new look on the formation, development, and microphysical properties of low-temperature cirrus clouds. PMID:17107102

  5. Bio-Security Proficiencies Project for Beginning Producers in 4-H

    ERIC Educational Resources Information Center

    Smith, Martin H.; Meehan, Cheryl L.; Borba, John A.

    2014-01-01

    Improving bio-security practices among 4-H members who raise and show project animals is important. Bio-security measures can reduce the risk of disease spread and mitigate potential health and economic risks of disease outbreaks involving animal and zoonotic pathogens. Survey data provided statistical evidence that the Bio-Security Proficiencies…

  6. Keys To The Kansas Environment. 4-H School Enrichment Program.

    ERIC Educational Resources Information Center

    Kansas State Univ., Manhattan. Extension Service.

    The 4-H Club packet for preschool and elementary school children contains nine "keys", or short learning exercises, designed to enrich science and environmental education both in and out of the classroom. Each "key" includes the purpose of the activity, the intended audience, the best time of the year for the activity, background information,…

  7. Marketing Strategies for Recruiting 4-H Members in West Virginia.

    ERIC Educational Resources Information Center

    Wingenbach, Gary J.; Nestor, Cheryl; Lawrence, Layle D.; Gartin, Stacy A.; Woloshuk, Jean; Mulkeen, Patricia

    2000-01-01

    According to a survey of 174 West Virginia 4-H members aged 13-18, the Internet and word of mouth were most effective in recruiting new members. Active messages stressing camps, fun, and friendship had the most influence on retention. A statewide marketing plan was recommended. (SK)

  8. Self-Protection: A New Approach to 4-H Health.

    ERIC Educational Resources Information Center

    Wright, Sharon K. B.

    This document introduces the issue of self-protection as the Minnesota 4-H Youth Development response to self-destructive behavior among adolescents. It presents findings from a statewide survey of over 36,000 secondary school students using the Minnesota Adolescent Health Survey. Responses are given in the areas of health, school attitudes,…

  9. CONSERVING OUR NATURAL RESOURCES, A 4-H LEADER'S GUIDE.

    ERIC Educational Resources Information Center

    AMICK, W. ROBERT; AND OTHERS

    AN EFFECTIVE 4-H CONSERVATION PROGRAM IS DEVELOPED AROUND THE FOLLOWING BASIC CONCEPTS--(1) MAN IS A PART OF THE NATURAL WORLD, IN WHICH THERE ARE MANY VALUABLE MATERIALS, (2) MAN HAS LEARNED TO USE MANY OF THOSE MATERIALS FOR HUMAN SUSTENANCE AND BETTERMENT, AND (3) MAN'S ECONOMIC, SOCIAL, AND GENERAL WELFARE IS LARGELY DEPENDENT UPON THE MANNER…

  10. "Ohio 4-H CARTEENS": Peer Intervention Safety Program.

    ERIC Educational Resources Information Center

    Cropper, Rebecca J.

    1999-01-01

    Ohio 4-H's CARTEENS seeks to reduce juvenile traffic violations in a program designed and presented by teen peer educators with guidance and technical assistance from the state highway patrol. Teens examined court data to determine content, which includes defensive driving, rural road safety, and dealing with peer pressure. (SK)

  11. Effectiveness of the Indiana 4-H Tractor Program: Alumni Perceptions.

    ERIC Educational Resources Information Center

    Carrabba, James J., Jr.; Talbert, B. Allen; Field, William E.; Tormoehlen, Roger

    2001-01-01

    Responses from Indiana 4-H tractor driving contestants 1982-197 (n=139) showed that 74% were employed on farms; most felt the contests effectively taught tractor safety and made them generally aware of safety. However, many still engaged in risky behaviors such as not wearing seatbelts in tractors with rollover protective structures or allowing…

  12. Minnesota 4-H Youth Program Quality Improvement Model

    ERIC Educational Resources Information Center

    Herman, Margo; Grant, Samantha

    2015-01-01

    The University of Minnesota Extension Center for Youth Development made an organizational decision in 2011 to invest in a system-wide approach to implement youth program quality into the 4-H program using the Youth Program Quality Assessment (YPQA) tool. This article describes the four key components to the Minnesota Youth Program Quality…

  13. The Evaluation Attitudes and Practices of 4-H Educators

    ERIC Educational Resources Information Center

    Lekies, Kristi S.; Bennett, Amanda M.

    2011-01-01

    Extension educators are expected to conduct program evaluation. An Internet survey was sent to county 4-H educators in Ohio to examine their evaluation attitudes and practices, as well as barriers to conducting evaluation. Respondents indicated a range of attitudes about evaluation and limited use of different designs and methods. Having enough…

  14. Fashion Revue. 4-H Textile Science Activity Guide.

    ERIC Educational Resources Information Center

    Scholl, Jan

    This publication was developed to help students participating in Fashion Review, a 4-H event in which students model a clothing outfit and accessories and are judged on their modeling ability, their presentation, and how well the clothing and accessory choices complement the students' skin tones, hair color, figure or physique, personality, and…

  15. Children and their 4-H animal projects: How children use science in agricultural activity

    NASA Astrophysics Data System (ADS)

    Emo, Kenneth Roy

    Many children are introduced to science through informal educational programs. 4-H, an educational youth program, has a history of introducing scientific practices into agriculture. The purpose of this ethnographically-driven case study is to examine how science informs the actions of children raising market animals in a 4-H project. For two years the researcher collected data on 4-H children with market animal projects. Observations, interviews, and artifacts gathered are interpreted using the framework of activity theory. This study provides evidence for how the context of an activity system influences individual actions. Rules developed by the organization guide the actions of children to incorporate physical and psychological tools of science into their project to achieve the object: producing animals of proper weight and quality to be competitive in the county fair. Children learn the necessary actions from a community of practitioners through which expertise is distributed. Children's learning is demonstrated by the way their participation in their project changes with time, from receiving assistance from others to developing expertise in which they provide assistance to others. The strength of this educational experience is how children apply specific tools of science in ways that provide meaning and relevancy to their 4-H activity.

  16. New Jersey 4-H Goat Extravaganza: Efficiently Meeting the Educational Needs of 4-H Goat Project Members, Volunteers, and Parents

    ERIC Educational Resources Information Center

    Ripberger, Chad

    2014-01-01

    The 4-H Goat Extravaganza maximizes limited resources to help youth and adults develop knowledge and skills in goat care and management. It capitalizes on the talents and interests of volunteers to efficiently combine a goat-themed art show, team presentation contest, quiz bowl, skillathon, and adult workshop into 1 day. This article outlines the…

  17. Starting and Maintaining a Marine Aquarium: 4-H Members Guide [and] 4-H Member's Project Record Book.

    ERIC Educational Resources Information Center

    Crenshaw, Neil

    The guide and the project record book included in this document are designed for 4-H members who would like to start a salt-water aquarium project. The guide includes the following topics: (1) general requirements for salt-water aquariums; (2) directions for making an aquarium; (3) suggestions for where to locate it; (4) pros and cons of using…

  18. Litter Control Achievement - Ohio 4-H Club Score Sheet [and] Activity Guides 1 through 7. 4-H Pilot Program 918.

    ERIC Educational Resources Information Center

    Ohio State Univ., Columbus. Cooperative Extension Service.

    Seven activity guides, evaluation sheet, and club scoresheet have been prepared for Ohio 4-H clubs' litter education program. Topics of the seven activity guides include: (1) general guidelines and types of activities; (2) little known facts about waste/litter; (3) guidelines for a walking tour; (4) fact sheet (questionnaire) related to garbage;…

  19. Phosphorus implantation into 4H-silicon carbide

    SciTech Connect

    Capano, M.A.; Santhakumar, R.; Venugopal, R.; Melloch, M.R.; Cooper, J.A. Jr.

    2000-02-01

    Sheet resistances in nitrogen- and phosphorus-implanted 4H-SiC are measured to assess the time and temperature dependencies of this variable. In 4H-SiC implanted with 3 x 10{sup 15} cm{sup {minus}2} nitrogen ions to a depth of 2,800 {angstrom}, the minimum sheet resistance observed is 534 {Omega}/{open{underscore}square}, a record low value for any implanted element into any polytype of SiC. Time-independent sheet resistances are observed following anneals at 1,700 C for nitrogen and phosphorus samples. Lower temperature anneals produce sheet resistances which decrease monotonically with increasing time of anneal. Overall, sheet resistances from phosphorus-implanted 4H-SiC are an order of magnitude below those measured from nitrogen implanted samples. The response of phosphorus to low-temperature annealing is significant, and sheet resistances below 500 {Omega}/{open{underscore}square} are achieved at 1,200 C. Activation of phosphorus is attempted in an oxidizing atmosphere with and without prior argon annealing. A three-hour gate oxidation in wet O{sub 2} at 1,150 C, followed by a 30 min argon anneal, produced a sheet resistance of 1081 {Omega}/{open{underscore}square}. Oxidation after argon annealing caused sheet resistances to increase by about 20% compared to samples subjected solely to argon annealing. It is also found that oxide growth rates are much higher over phosphorus implanted than over unimplanted 4H-SiC. Reasons for the disparity in sheet resistances between nitrogen and phosphorus implants, and for the difference in oxide growth rates are suggested.

  20. A Perfect Fit: 4-H Involvement for Youth with Disabilities. A Leader's Guide.

    ERIC Educational Resources Information Center

    Schnepf, Greg W.; And Others

    This guide for 4-H leaders and volunteers offers information to help integrate youth with disabilities into various 4-H programs. After an introduction, a section on 4-H and mainstreaming reviews the mission of 4-H; considers what 4-H has to offer youth; defines mainstreaming; notes the benefits of mainstreaming; and distinguishes among the terms…

  1. Connecting Kids To The Universe: Partnering With 4-H Youth Development To Pilot 'Afterschool Universe' In New York

    NASA Astrophysics Data System (ADS)

    Schaff, Nancy

    2008-05-01

    4-H Youth Development - as the youth program of the Cooperative Extension system associated with the land grant university in every state - is an ideal partner for statewide dissemination of EPO programs. With funding from a Chandra Cycle 9 EPO grant we are piloting `Afterschool Universe’ in five urban locations in New York State. `Afterschool Universe’ is an education/outreach effort sponsored by NASA's Beyond Einstein program and was developed in partnership with the Imagine the Universe EPO program. The program is targeted at middle school students in out-of-school-time settings and explores basic astronomy concepts focused on the Universe beyond the solar system. Consisting of 12 sessions of engaging hands-on activities, the flexibly structured program can be used in a variety of settings, including astronomy days, youth groups, summer camps, and afterschool programs. Partnering with 4-H Youth Development helps us reach large numbers of underserved and underrepresented minority youth and girls in widely dispersed areas of New York and fits ideally with the current national 4-H SET (science, engineering, and technology) initiative and emphasis on 4-H afterschool programming. The pilot program provides teaching kits and workshops for program leaders. Our 4-H county partners recruit afterschool program staff, science center staff, 4-H volunteers, 4-H teens, and other youth group leaders as workshop participants. The 4-H program will house and loan the kit to trained leaders. By providing kits and training in 2008, we are gearing up for International Year of Astronomy programs in 2009 in out-of-school settings. Based on pilot results, we will seek additional funding to expand the program. The poster will discuss kit development, 4-H partnership, workshops, participating organizations, target audiences, successes, and challenges.

  2. Enantioselective synthesis of 4H-pyranonaphthoquinones via sequential squaramide and silver catalysis.

    PubMed

    Kaya, Uğur; Chauhan, Pankaj; Hack, Daniel; Deckers, Kristina; Puttreddy, Rakesh; Rissanen, Kari; Enders, Dieter

    2016-01-28

    An enantioselective one-pot Michael addition/hydroalkoxylation reaction between 2-hydroxy-1,4-naphthoquinones and alkyne-tethered nitroalkenes catalyzed by a cinchona-derived squaramide and a silver(I) salt has been developed. The sequential protocol provides a direct access to 4H-pyranonaphthoquinones in moderate to very good yields and good to excellent enantioselectivities at a very low catalyst loading (0.5 mol%) of the squaramide. PMID:26660230

  3. Thermodynamic calculations in the system CH4-H2O and methane hydrate phase equilibria

    USGS Publications Warehouse

    Circone, S.; Kirby, S.H.; Stern, L.A.

    2006-01-01

    Using the Gibbs function of reaction, equilibrium pressure, temperature conditions for the formation of methane clathrate hydrate have been calculated from the thermodynamic properties of phases in the system CH4-H 2O. The thermodynamic model accurately reproduces the published phase-equilibria data to within ??2 K of the observed equilibrium boundaries in the range 0.08-117 MPa and 190-307 K. The model also provides an estimate of the third-law entropy of methane hydrate at 273.15 K, 0.1 MPa of 56.2 J mol-1 K-1 for 1/n CH4??H 2O, where n is the hydrate number. Agreement between the calculated and published phase-equilibria data is optimized when the hydrate composition is fixed and independent of the pressure and temperature for the conditions modeled. ?? 2006 American Chemical Society.

  4. Intergenerational Panels at Centennial Events: Stimulating Discussion about Continuity and Change in the 4-H Program

    ERIC Educational Resources Information Center

    Kaplan, Matthew S.; Weikert, Ben; Scholl, Jan; Rushton, Mya

    2013-01-01

    This article introduces an intergenerational strategy for organizations planning centennial celebratory events. The methods and findings from the 4-H through the Generations session conducted at the joint 4-H Leadership Conference and 4-H Leaders Forum to celebrate the Pennsylvania 4-H Centennial are reported. Youth and adult participants shared…

  5. North Central Region 4-H Volunteers: Documenting Their Contributions and Volunteer Development

    ERIC Educational Resources Information Center

    Nippolt, Pamela Larson; Pleskac, Sue; Schwartz, Vicki; Swanson, Doug

    2012-01-01

    Documenting volunteer contributions strengthens Extension partnerships with volunteers. A team of North Central Region 4-H volunteer specialists collaborated to conduct a study of 4-H volunteer contributions and impacts related to working with youth within the 4-H program. Over three thousand (3,332) 4-H volunteers from throughout the 12-state…

  6. Experimental investigations of the hypernucleus Λ4H

    NASA Astrophysics Data System (ADS)

    Achenbach, P.; Schulz, F.; Aulenbacher, S.; Beričič, J.; Bleser, S.; Böhm, R.; Bosnar, D.; Correa, L.; Distler, M. O.; Esser, A.; Fonvieille, H.; Friščić, I.; Fujii, Y.; Fujita, M.; Gogami, T.; Kanda, H.; Kaneta, M.; Kegel, S.; Kohl, Y.; Kusaka, W.; Margaryan, A.; Merkel, H.; Mihovilovič, M.; Müller, U.; Nagao, S.; Nakamura, S. N.; Pochodzalla, J.; Sanchez Lorente, A.; Schlimme, B. S.; Schoth, M.; Sfienti, C.; Širca, S.; Steinen, M.; Takahashi, Y.; Tang, L.; Thiel, M.; Tsukada, K.; Tyukin, A.; Weber, A.

    2016-03-01

    Negatively charged pions from two-body decays of stopped Λ4H hypernuclei were studied in 2012 at the Mainz Microtron MAMI, Germany. The momenta of the decay-pions were measured with unprecedented precision by using high-resolution magnetic spectrometers. A challenge of the experiment was the tagging of kaons from associated K+∧ production off a Be target at very forward angles. In the year 2014, this experiment was continued with a better control of the systematic uncertainties, with better suppression of coincident and random background, improved particle identification, and with higher luminosities. Another key point of the progress was the improvement in the absolute momentum calibration of the magnetic spectrometers.

  7. Extended defects in 4H-silicon carbide homoepitaxial layers

    NASA Astrophysics Data System (ADS)

    Zhang, Xuan

    The purpose of this thesis is to study the structure of extended defects in 4H-SIC homoepitaxial layers, and to identify their nucleation mechanisms. Characteristics of basal plane dislocations in 4H-SiC epilayers were investigated in a comprehensive manner, including their morphologies, Burgers' vectors, positions, and correlation with the extended defects propagating from the substrate. Plan-view transmission x-ray topography was the major characterization technique used in this study. Complementary data was obtained by KOH etching and optical microscopy. Trace of glide was detected on every basal plane dislocation in the entire 3-inch epilayer. In the center area of the epi-wafer, the glide can extend to macroscopic distance and form edge-type dislocations at the epilayer/surface interface. During the motion, dislocation half loop arrays were found to nucleate at the growth front. The magnitude of the resolved shear stress was estimated based on the radius of curvature of the dislocation lines. It surpassed the critical resolved shear stress at the epitaxial growth temperature. The stress was identified to be compressive in the epilayer. Its origin was studied. Nitrogen-doping-difference-induced misfit strain was excluded as the source of the stress. The structures of two morphological defects, 'carrots' and 'arrows', were studied. Cross-section x-ray topography was used to image the structure of carrot defect in whole. The defect was found to nucleate at the epilayer/substrate interface on a threading screw dislocation propagating from the substrate. Its structure was mainly composed of a prismatic stacking fault and a Frank-type basal plane stacking fault. The arrow defect was found to be produced by a spheroid shape inclusion in the volume of the epilayer. Zone axis diffraction pattern under transmission electron microscope identified the nature of the inclusion as 3C-SIC. It was determined to nucleate at the substrate surface contaminations.

  8. Carbon-antisite vacancy defect in 4H silicon carbide for realizing solid state qubit

    NASA Astrophysics Data System (ADS)

    Gali, Adam; Szász, Krisztián; Ivády, Viktor; Abrikosov, Igor; Bockstedte, Michel; Janzén, Erik

    2015-03-01

    Dopants in solids are promising candidates for implementations of quantum bits for quantum computing. Silicon carbide (SiC) with engineered point defects is considered as very promising material for the next generation devices, with applications ranging from electronics and photonics to quantum computing. Employing density functional theory and many body perturbation theory, we show that the neutral carbon antisite-vacancy pair (CAV) has high spin ground state, and that its spin may be coherently manipulated by optical excitation in n-type 4H SiC. As the positively charged CAV defect in 4H SiC has been recently engineered to act as single photon source, our finding brings a hope that optically addressed quantum bits can be realized by the neutral CAV defects in 4H SiC, and provide an additional target for researchers seeking for solid state single color centers for quantum information processes and metrology. The calculated zero-phonon line of the optically excited state is about 1550 nm (0.8 eV) which perfectly fits to the telecom wavelengths, that makes this qubit candidate very promising for integration of quantum optics devices with existing fiber optics technology. Lendület program of Hungarian Academy of Sciences, the Knut & Alice Wallenberg Foundation, Swedish Research Council, US DoE.

  9. Characterization of phosphorus implantation in 4H-SiC

    SciTech Connect

    Khemka, V.; Patel, R.; Ramungul, N.; Chow, T.P.; Ghezzo, M.; Kretchmer, J.

    1999-03-01

    Silicon carbide is expected to be a promising material for high-voltage semiconductor power devices. The authors report the characterization of phosphorus implantation in 4H-SiC. The implanted layers are characterized by analytical techniques (secondary ion mass spectrometry, transmission electron microscopy) as well as electrical and a sheet resistance value as low as 160 {Omega}/{open_square} has been measured. The authors have also studied the effect of annealing time and temperature on activation of phosphorus implants. It has been shown to be possible to obtain low sheet resistance ({approximately}260 {Omega}/{open_square}) by annealing at a temperature as low as 1,200 C. High-dose ({approximately} 4 {times} 10{sup 15} cm{sup {minus}2}) implants are found to have a higher sheet resistance than that on lower dose implants which is attributed to the near-surface depletion of the dopant during high temperature anneal. Different implantation dosages were utilized for the experiments and subsequently junction rectifiers were fabricated. Forward characteristics of these diodes are observed to obey a generalized Sah-Noyce-Shockly multiple level recombination model with four shallow levels and one deep level.

  10. 7 CFR 8.9 - Use in 4-H fund raising.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 1 2010-01-01 2010-01-01 false Use in 4-H fund raising. 8.9 Section 8.9 Agriculture Office of the Secretary of Agriculture 4-H CLUB NAME AND EMBLEM § 8.9 Use in 4-H fund raising. (a) Fund-raising programs using the 4-H Name or Emblem may be carried out for specific educational purposes. Such fund-raising programs and use of the...

  11. Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

    SciTech Connect

    Sometani, Mitsuru; Takei, Manabu; Okamoto, Dai; Harada, Shinsuke; Ishimori, Hitoshi; Takasu, Shinji; Hatakeyama, Tetsuo; Yonezawa, Yoshiyuki; Fukuda, Kenji; Okumura, Hajime

    2015-01-14

    The conduction mechanism of the leakage current of a thermally grown oxide on 4H silicon carbide (4H-SiC) was investigated. The dominant carriers of the leakage current were found to be electrons by the carrier-separation current-voltage method. The current-voltage and capacitance-voltage characteristics, which were measured over a wide temperature range, revealed that the leakage current in SiO{sub 2}/4H-SiC on the Si-face can be explained as the sum of the Fowler-Nordheim (FN) tunneling and Poole-Frenkel (PF) emission leakage currents. A rigorous FN analysis provided the true barrier height for the SiO{sub 2}/4H-SiC interface. On the basis of Arrhenius plots of the PF current separated from the total leakage current, the existence of carbon-related defects and/or oxygen vacancy defects was suggested in thermally grown SiO{sub 2} films on the Si-face of 4H-SiC.

  12. Using the Delphi Technique to Assess Educational Needs Related to Extension's 4-H Beef Program.

    ERIC Educational Resources Information Center

    Shih, Ching-Chun; Gamon, Julia A.

    1997-01-01

    Delphi panels completing questionnaires included 32 parents of 4-H students, 16 extension beef specialists, 21 4-H field specialists, and 21 industry representatives. They identified 31 subject-matter and 30 life-skill topics useful for 4-H manuals. Emerging topics included consumer and environmental concerns. (SK)

  13. Perceptions of Missouri 4-H Youth Development Personnel Regarding Interorganizational Cooperative Behavior

    ERIC Educational Resources Information Center

    McKim, Billy R.; Torres, Robert M.

    2011-01-01

    Perceptions of 4-H youth development personnel regarding interorganizational cooperation were studied between the perceived and desired levels of cooperative activities between 4-H youth development personnel and secondary agriculture teachers. Results indicated that 4-H youth development personnel wanted higher levels of coordinated efforts…

  14. Examination of Attitude and Interest Measures for 4-H Science Evaluation

    ERIC Educational Resources Information Center

    Lewis, Kendra M.; Worker, Steven M.

    2015-01-01

    Science education research has demonstrated the influence of affect on learning. The National 4-H Science Logic Model outlines outcomes from youth participation in 4-H science programs, which includes attitude and interest outcomes. The associated measure, the National 4-H Science Common Measure, assesses these attitude constructs and not other…

  15. Perceptions of Texas 4-H Livestock Ambassadors on Career Development, Higher Education, and Leadership Development

    ERIC Educational Resources Information Center

    Zanolini, William F.; Rayfield, John; Ripley, Jeff

    2013-01-01

    Selected 4-H youth participated in the Texas 4-H Livestock Ambassador program. Forty-five youth participated in the 3-day program delivered by university professors and staff, Texas AgriLife Extension faculty and industry representatives. An instrument was developed and administered to the Texas 4-H Livestock Ambassadors at the end of their first…

  16. Understanding the Knowledge and Use of Experiential Learning within Pennsylvania 4-H Clubs

    ERIC Educational Resources Information Center

    Bechtel, Robyn; Ewing, John C.; Threeton, Mark; Mincemoyer, Claudia

    2013-01-01

    Experiential learning is incorporated into the National 4-H curriculum. However, the state 4-H staff in Pennsylvania is unsure of the current knowledge and use of experiential learning within the local 4-H clubs. An online survey was distributed to Extension educators and volunteer leaders within Pennsylvania to assess the current knowledge and…

  17. Relationship between Participation in 4-H and Community Leadership in Rural Montana

    ERIC Educational Resources Information Center

    Flynn, Allison; Frick, Martin; Steele, Douglas

    2010-01-01

    Studies on the impact of 4-H on former members generally use alumni as one cohort. In rural states, such as Montana, it is important to understand the impact of 4-H on alumni in these rural areas and the role 4-H plays in community involvement. The study reported here sought to determine the perception of current community leaders in rural Montana…

  18. Expression analysis of kenaf cinnamate 4-hydroxylase (C4H) ortholog during developmental and stress responses

    Technology Transfer Automated Retrieval System (TEKTRAN)

    This study was conducted to clone and analyze the expression pattern of a C4H gene encoding cinnamate 4-hydroxylase from kenaf (Hibiscus cannabinus L.). A full-length C4H ortholog was cloned using degenerate primers and the RACE (rapid amplification of cDNA ends) method. The full-length C4H ortholog...

  19. Text to Speech: A 4-H Model of Accessibility and Inclusion

    ERIC Educational Resources Information Center

    Green, Jeremy W.

    2012-01-01

    4-H project manuals play an integral part in a youth's ability to achieve mastery in a specific project area. For youth who struggle with reading, written 4-H materials prove inadequate in addressing the needs of the learner. This article proposes a new delivery method of 4-H educational material designed to create a more inclusive and…

  20. Stewardship as a Means to Create Organizational Reform: A View into Minnesota 4-H Youth Development

    ERIC Educational Resources Information Center

    Skuza, Jennifer A.; Freeman, Dorothy M.; Bremseth, Tamara J.; Doering, Shirley A.; Quinlan, Robert B.; Morreim, Patricia A.; Deidrick, James C.

    2010-01-01

    Minnesota 4-H Youth Development (MN 4-H) used stewardship as a means to create organizational reform to address the public use of the 4-H name and emblem in terms of risk management, real estate and equipment, and finances. A task force implemented a participatory process with colleagues and stakeholders to build and implement the reform effort.…

  1. The ultraviolet photochemistry of diacetylene - Direct detection of primary products of the metastable C4H2* + C4H2 reaction

    NASA Technical Reports Server (NTRS)

    Bandy, Ralph E.; Lakshminarayan, Chitra; Frost, Rex K.; Zwier, Timothy S.

    1993-01-01

    The products of diacetylene's ultraviolet photochemistry over the 245-220 nm region were directly determined in experiments where C4H2 was excited within a small reaction tube attached to a pulsed nozzle. The products formed in the collisions of C4H2* with C4H2 were subsequently ionized by vacuum UV radiation (at 118 nm) in the ion source of a time-of-flight mass spectrometer. It was found that the reaction of C4H2* with C4H2 produces C6H2 (+C2H2), C8H2 (+2H,H2), and C8H3 (+H), confirming the results of Glicker and Okabe (1987). Under certain conditions, secondary products were observed. Mechanisms for the observed reactions are proposed.

  2. Density functional studies on the endohedral complex of fullerene C70 with tetrahedrane (C4H4): C4H4@C70.

    PubMed

    Ren, Xiao-Yuan; Jiang, Cai-Ying

    2012-07-01

    B3LYP/6-31G(d) hybrid HF/DFT calculations were carried out to determine the structural and electronic properties of the endohedral complex of a C(70) cage with tetrahedrane (C(4)H(4)). It was demonstrated that the formation of the complex is endothermic, with a destabilization energy of 72.56 kcal mol(-1). C(4)H(4) is seated in the center of the C(70) cage and exists in molecular form inside the fullerene. C(4)H(4) endohedral doping slightly perturbs the molecular orbitals of C(70). The calculated HOMO-LUMO gaps, the electron affinity (EA), and the ionization potential (IP) indicate that C(4)H(4)@C(70) is more chemically reactive than C(70). The IR active modes and harmonic vibrational frequencies of C(4)H(4)@ C(70) are also discussed. PMID:22246288

  3. Creating the Southern Region 4-H Volunteer Advisory Group

    ERIC Educational Resources Information Center

    Culp, Ken, III; Edwards, Harriett C.; Jordan, Jenny W.

    2014-01-01

    The SR4-HVAG combines the efforts of states to provide quality educational programming for volunteers and Extension professionals using an advisory group system. An advisory group rather than a council was created because the group provides programmatic input rather than sets policy. The purposes of the SR4-HVAG are to: provide a mechanism for…

  4. Wetlands Are Wonderlands. Leader/Teacher Guide and Member/Youth Guide. 4-H Marine Education Series-1.

    ERIC Educational Resources Information Center

    Meenen, Kimberly, Ed.; Goettel, Robin G., Ed.

    This guide, for a 4-H wetlands project, is designed for sixth to eighth grade youth and their leaders interested in learning and doing aquatic science activities that can help the environment. The project provides basic wetland information with one or more activities for each of six sections: (1) What is a wetland?; (2) value of wetlands; (3)…

  5. Catalytic graphitization and Ohmic contact formation on 4H-SiC

    NASA Astrophysics Data System (ADS)

    Lu, Weijie; Mitchel, W. C.; Landis, G. R.; Crenshaw, T. R.; Collins, W. Eugene

    2003-05-01

    Electrical contact properties and graphitic structures of metal/carbon/4H-SiC structures are investigated. Metals studied include Ni, Co, Cr, NiCr, Ti, W, Mo, Al, and Au. Ohmic contacts are formed on Ni/C, Co/C, Cr/C, and NiCr/C films on 4H-SiC with n-type, C-face, and a doping concentration of 1.8×1019 cm-3 . Only Ni/C and Co/C films exhibit Ohmic contact behavior on SiC with n-type, Si-face, and a doping concentration of 1.6×1018 cm-3. Ni and Co are well known as excellent graphitization catalysts. Raman spectra show that the formation of graphitic carbon is related to the formation of Ohmic contacts in the annealed metal/carbon/SiC structures. Generally accepted catalytic graphitization mechanisms are applied to explain the scanning electron microscopy images, which demonstrate a relationship between the catalytically reacted morphology and Ohmic contact behavior. This study provides evidence that the metals with better catalytic graphitization activities form better Ohmic contacts on metal/carbon/SiC structures.

  6. The reinvestigation of the kinetics of the metathesis reactions t-C4H9• + HBr (HI) → i-C4H10 + Br• (I•) and of the t-C4H9• free radical thermochemistry.

    PubMed

    Leplat, N; Rossi, M J

    2014-07-17

    A reinvestigation of the absolute rate constant of the metathesis reactions t-C4H9• + HBr → i-C4H10 + Br• (1) and t-C4H9• + HI → i-C4H10 + I• (2) was performed thanks to a recently developed apparatus consisting of a Knudsen reactor coupled to detection based on single-photon (VUV) photoionization mass spectrometry (SPIMS). It enables the generation of thermalized hydrocarbon free radicals owing to a source upstream of and external to the Knudsen reactor. The following Arrhenius expressions were obtained: k1 = 5.6(±1.4) × 10(–12) exp(−6.76(±0.94)/(RT)) and k2 = 2.0(±0.6) × 10(–11) exp(−8.48(±0.94)/(RT)) with R = 8.314 J mol(–1) K(–1) over the range 293 to 623 K. The mass balance of the reaction system based on closed shell product detection (CSPD) was checked in order to ensure the accuracy of the used reaction mechanism and as an independent check of k1 and k2. The wall-loss rate constants of the t-butyl free radical, kw(C4H9), were measured and found to be low compared with the corresponding escape rate constant, ke(C4H9), for effusion of t-C4H9• out of the Knudsen reactor. On the basis of the present results, the free radical standard heat of formation ΔfH298°(t-C4H9•) = 44.3 ± 1.7 kJ mol(–1) was obtained when combined with the kinetics of the inverse halogenation reaction taken from the literature and using S298°(t-C4H9•) = 322.2 J K(–1) mol(–1) following a “Third Law” evaluation method. The standard enthalpy for t-butyl free radical is consistent for both the bromination and iodination reactions within the stated uncertainties. PMID:24942181

  7. What About Waste? 4-H Leader's/Teacher's Guide.

    ERIC Educational Resources Information Center

    Bonhotal, Jean F.; And Others

    This guide is designed for adult volunteer leaders, camp counselors, and teachers who want to explore the subject of waste disposal and management with youth. An introduction provides background on waste disposal problems and disposal options including reducing, reusing, recycling, and composting. Seven discussion questions are intended to…

  8. Raman characterization of damaged layers of 4H-SiC induced by scratching

    NASA Astrophysics Data System (ADS)

    Nakashima, Shin-ichi; Mitani, Takeshi; Tomobe, Masaru; Kato, Tomohisa; Okumura, Hajime

    2016-01-01

    Recent development of device fabrication of SiC is awaiting detailed study of the machining of the surfaces. We scratched 4H-SiC surfaces with a sliding microindenter made of a SiC chip, and characterized machining affected layers by micro-Raman spectroscopy. The results of the Raman measurement of the scratching grooves revealed that there were residual stress, defects, and stacking faults. Furthermore, with heavy scratching load, we found clusters of amorphous SiC, Si, amorphous carbon, and graphite in the scratching grooves. Analysis of the Raman spectra showed that SiC amorphization occurs first and surface graphitization (carbonization) is subsequently generated through the phase transformation of SiC. We expect that the Raman characterization of machined surfaces provides information on the machining mechanism for compound semiconductors.

  9. Plasma ignition and steady state simulations of the Linac4 H(-) ion source.

    PubMed

    Mattei, S; Ohta, M; Yasumoto, M; Hatayama, A; Lettry, J; Grudiev, A

    2014-02-01

    The RF heating of the plasma in the Linac4 H(-) ion source has been simulated using a particle-in-cell Monte Carlo collision method. This model is applied to investigate the plasma formation starting from an initial low electron density of 10(12) m(-3) and its stabilization at 10(18) m(-3). The plasma discharge at low electron density is driven by the capacitive coupling with the electric field generated by the antenna, and as the electron density increases the capacitive electric field is shielded by the plasma and induction drives the plasma heating process. Plasma properties such as e(-)/ion densities and energies, sheath formation, and shielding effect are presented and provide insight to the plasma properties of the hydrogen plasma. PMID:24593555

  10. Plasma ignition and steady state simulations of the Linac4 H{sup −} ion source

    SciTech Connect

    Mattei, S. Lettry, J.; Grudiev, A.; Ohta, M.; Yasumoto, M.; Hatayama, A.

    2014-02-15

    The RF heating of the plasma in the Linac4 H{sup −} ion source has been simulated using a particle-in-cell Monte Carlo collision method. This model is applied to investigate the plasma formation starting from an initial low electron density of 10{sup 12} m{sup −3} and its stabilization at 10{sup 18} m{sup −3}. The plasma discharge at low electron density is driven by the capacitive coupling with the electric field generated by the antenna, and as the electron density increases the capacitive electric field is shielded by the plasma and induction drives the plasma heating process. Plasma properties such as e{sup −}/ion densities and energies, sheath formation, and shielding effect are presented and provide insight to the plasma properties of the hydrogen plasma.

  11. An Integrated Gate Driver in 4H-SiC for Power Converter Applications

    SciTech Connect

    Ericson, Milton Nance; Frank, Steven Shane; Britton, Charles; Janke, Devon D; Ezell, N Dianne Bull; Ryu, Sei_Hyung; Mantooth, Alan; Francis, Dr. Matt; Lanmichhane, Dr. Ranjan; Shepherd, Dr. Paul; Glover, Dr. Michael; Whitaker, Mr. Bret; Cole, Mr. Zach; Passmore, Mr. Brandon; Mcnutt, Tyler

    2014-01-01

    A gate driver fabricated in a 2-um 4H silicon carbide (SiC) process is presented. This process was optimized for vertical power MOSFET fabrication but accommodated integration of a few low-voltage device types including N-channel MOSFETs, resistors, and capacitors. The gate driver topology employed incorporates an input level translator, variable power connections, and separate power supply connectivity allowing selection of the output signal drive amplitude. The output stage utilizes a source follower pull-up device that is both overdriven and body source connected to improve rise time behavior. Full characterization of this design driving a SiC power MOSFET is presented including rise and fall times, propagation delays, and power consumption. All parameters were measured to elevated temperatures exceeding 300 C. Details of the custom test system hardware and software utilized for gate driver testing are also provided.

  12. Plasma ignition and steady state simulations of the Linac4 H- ion source

    NASA Astrophysics Data System (ADS)

    Mattei, S.; Ohta, M.; Yasumoto, M.; Hatayama, A.; Lettry, J.; Grudiev, A.

    2014-02-01

    The RF heating of the plasma in the Linac4 H- ion source has been simulated using a particle-in-cell Monte Carlo collision method. This model is applied to investigate the plasma formation starting from an initial low electron density of 1012 m-3 and its stabilization at 1018 m-3. The plasma discharge at low electron density is driven by the capacitive coupling with the electric field generated by the antenna, and as the electron density increases the capacitive electric field is shielded by the plasma and induction drives the plasma heating process. Plasma properties such as e-/ion densities and energies, sheath formation, and shielding effect are presented and provide insight to the plasma properties of the hydrogen plasma.

  13. AB INITIO CHARACTERIZATION OF C{sup -}{sub 4}, C{sub 4}H, AND C{sub 4}H{sup -}

    SciTech Connect

    Senent, M. L.

    2010-01-10

    Using state-of-the-art theoretical methods, we investigate the stable isomers of C{sup -}{sub 4}, C{sub 4}H and C{sub 4}H{sup -}. Three of them are relevant for astrophysics and astrochemistry. These computations are performed using highly correlated ab initio methods and the aug-cc-pVXZ (X = T,Q) basis sets. In addition to the linear isomers, we predict the existence of several cyclic and branched forms for these molecules. For all the molecular species of interest here, sets of spectroscopic parameters are determined with perturbation theory, which compare quite well with experiment. For l - C{sub 4}H{sup -}(X {sup 1}SIGMA{sup +}), the quartic force field is computed at the coupled cluster level of theory. This force field is derived from full nine-dimensional potential energy surface generated close to the equilibrium geometry of this anion. Finally, we treat the thermochemistry of the hydrogen attachment and the electron attachment reactions that may lead to the formation of the C{sub 4}H{sup -} from either C{sup -}{sub 4} or C{sub 4}H.

  14. 4-H's Influence on Advanced Training, Careers and Leadership Roles in Adulthood.

    ERIC Educational Resources Information Center

    Rockwell, S. Kay; And Others

    A study explored how adults felt their 4-H experience contributed to their selection of advanced education and/or a career and helped them with leadership skills in their occupations or community activities. To obtain data, a questionnaire was mailed to former 4-H members aged 25 to 35 in northeast Nebraska; 318 questionnaires were returned.…

  15. Bringing Carnaval Drum and Dance Traditions into 4-H Programming for Latino Youth

    ERIC Educational Resources Information Center

    Conklin-Ginop, Evelyn; Braverman, Marc T.; Caruso, Robyn; Bone, Dennis

    2011-01-01

    4-H Bloco Drum and Dance is an afterschool program that teaches adolescents drumming, dancing, and theater arts in the rich traditions of Brazilian Carnaval. Teens learn to express themselves in a variety of modalities and perform at community events. The program was developed by a community coalition that included 4-H, other youth programs, and…

  16. The First Fifty Years of the 4-H Program (Part 1).

    ERIC Educational Resources Information Center

    Van Horn, Beth E.; Flanagan, Constance A.; Thomson, Joan S.

    1998-01-01

    Reviews achievements during the first 50 years of 4-H club work, including volunteer leadership development, funding support, and response to society's needs during the war years. Demonstrates how 4-H has changed to meet societal needs while remaining true to the original mission. (SK)

  17. Birds in Your Backyard. 4-H Leaders Guide. L-5-17.

    ERIC Educational Resources Information Center

    Hawkes, Janet E.; Held Phillips, Diane

    This pocket folder of instructional materials is designed to introduce youth aged 9 to 12 to ornithology, the study of birds. The package includes a 4-H member's guide and a Leader's guide. The illustrated 4-H member's guide contains information about attracting and feeding birds. It also includes activities for cooking for birds, making bird…

  18. 4-H Healthy Living Programs with Impact: A National Environmental Scan

    ERIC Educational Resources Information Center

    Downey, Laura H.; Peterson, Donna J.; LeMenestrel, Suzanne; Leatherman, JoAnne; Lang, James

    2014-01-01

    The 4-H youth development program of the nation's 109 land-grant universities and the Cooperative Extension System is one of the largest youth development organization in the United States serving approximately six million youth. The 4-H Healthy Living initiative began in 2008 to promote achievement of optimal physical, social, and emotional…

  19. College Transition Study Shows 4-H Helps Youth Prepare for and Succeed in College

    ERIC Educational Resources Information Center

    Ratkos, Judy; Knollenberg, Lauren

    2015-01-01

    Many young adults enter college without the knowledge and skills necessary to succeed. The purpose of the study reported here was to determine if 4-H helps develop life skills needed for the transition to college and overall college success. An online survey was sent to college-attending 4-H alumni and a comparison group, with a final sample size…

  20. The Effects of Age, Gender, and 4-H Involvement on Life Skill Development

    ERIC Educational Resources Information Center

    Haas, Bruce E.; Mincemoyer, Claudia C.; Perkins, Daniel F.

    2015-01-01

    The study reported here examined the effects of age, gender, and 4-H involvement in clubs on life skill development of youth ages eight to 18 over a 12-month period. Regression analyses found age, gender, and 4-H involvement significantly influenced life skill development. Results found that females have higher levels of competencies in life…

  1. Acquisition, Custody, and Storage of Firearms Used in 4-H Shooting Sports Programs

    ERIC Educational Resources Information Center

    White, David J.; Smith, Jedediah D.

    2014-01-01

    Shooting sports has been a 4-H program offering since the 1930's. Tragic events related to the use of firearms as weapons have caused public and private entities to evaluate and consider the appropriateness of youth access to and usage of firearms. 4-H educators have the primary responsibility for managing the risk associated with shooting…

  2. Characteristics and Perceptions of 4-H Participants: Gender and Age Differences across Adolescence

    ERIC Educational Resources Information Center

    Bartoszuk, Karin; Randall, Brandy A.

    2011-01-01

    The study reported here examined 367 adolescent 4-H participants in terms of demographic, psychological, behavioral, and relational characteristics, as well as their perceptions and experiences in 4-H. Overall, participants scored high on all outcome variables except having a diverse population in their club. Older participants were more…

  3. Food Challenge: Serving Up 4-H to Non-Traditional Audiences

    ERIC Educational Resources Information Center

    Dodd, Sara; Follmer-Reece, Holly E.; Kostina-Ritchey, Erin; Reyna, Roxanna

    2015-01-01

    This article describes a novel approach for introducing 4-H to non-traditional/diverse audiences using 4-H Food Challenge. Set in a low SES and minority-serving rural school, Food Challenge was presented during the school day to all 7th grade students, with almost half voluntarily participating in an after-school club component. Program design…

  4. 4-H Youth Development: The Past, the Present, and the Future

    ERIC Educational Resources Information Center

    Borden, Lynne M.; Perkins, Daniel F.; Hawkey, Kyle

    2014-01-01

    The 4-H Program within Cooperative Extension is more than 100 years old. As we celebrate 100 years of Cooperative Extension, the foundation built by the 4-H Program serves as grounds to meet the needs of today's youth. The diversity of the youth who participate continues to grow, families continue to become less traditional, potential…

  5. 4-H and Tech Ed Partnership Gets Students Geeked about STEM

    ERIC Educational Resources Information Center

    Ivey, Debra; Quam, Greg

    2009-01-01

    This article discusses the 4-H Gateway Academies specifically designed to enhance science, technology, engineering, and math (STEM) skills and knowledge in middle school youth. The innovative summer day camps partnered Project Lead the Way--trained teachers with county 4-H staff from University of Wisconsin-Extension (UW-Extension) Cooperative…

  6. Fitting the Framework: The STEM Institute and the 4-H Essential Elements

    ERIC Educational Resources Information Center

    Sallee, Jeff; Peek, Gina G.

    2014-01-01

    Extension and 4-H youth development programs are addressing a shortage of scientists, engineers, and other related professionals by promoting science, technology, engineering, and math (STEM). This case study illustrates how the Oklahoma 4-H Youth Development program trained youth-adult teams to design and implement STEM projects. The STEM…

  7. 4-H and Forestry Afterschool Clubs: A Collaboration to Foster Stewardship Attitudes and Behaviors in Youth

    ERIC Educational Resources Information Center

    Gupta, Angela S.; Grant, Samantha; Strauss, Andrea Lorek

    2012-01-01

    The University of Minnesota Extension's 4-H and Forestry Afterschool program combined the 4-H structure and various forestry curricula to foster positive attitudes towards the environment and stewardship-related behaviors as these may serve as precursors to later choices that benefit the environment. Evaluation of third through fifth grade…

  8. Simple method for the growth of 4H silicon carbide on silicon substrate

    NASA Astrophysics Data System (ADS)

    Asghar, M.; Shahid, M. Y.; Iqbal, F.; Fatima, K.; Nawaz, Muhammad Asif; Arbi, H. M.; Tsu, R.

    2016-03-01

    In this study we report thermal evaporation technique as a simple method for the growth of 4H silicon carbide on p-type silicon substrate. A mixture of Si and C60 powder of high purity (99.99%) was evaporated from molybdenum boat. The as grown film was characterized by XRD, FTIR, UV-Vis Spectrophotometer and Hall Measurements. The XRD pattern displayed four peaks at 2Θ angles 28.550, 32.700, 36.100 and 58.900 related to Si (1 1 1), 4H-SiC (1 0 0), 4H-SiC (1 1 1) and 4H-SiC (2 2 2), respectively. FTIR, UV-Vis spectrophotometer and electrical properties further strengthened the 4H-SiC growth.

  9. Tertiary amine-catalyzed (4 + 2) annulations of δ-acetoxy allenoates: synthesis of multisubstituted 4H-pyran and 4H-chromene.

    PubMed

    Gu, Yiting; Li, Falin; Hu, Pengfei; Liao, Daohua; Tong, Xiaofeng

    2015-03-01

    The DABCO-catalyzed divergent (4 + 2) annulations of δ-acetoxy allenoates 1 are reported. The chemical behavior of 1 under DABCO catalyst was found to be substrate dependent. Allenoate 1 with an aromatic group at δC preferentially reacted with salicylaldehyde derivative 2, delivering 4H-chromenes 3. On the other hand, allenoates 1 with an alkyl group at δC readily underwent (4 + 2) annulations with oxo diene 4 to afford 4H-pyrans 5. PMID:25692476

  10. Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates

    SciTech Connect

    Si, W.; Dudley, M.; Kong, H.S.; Sumakeris, J.; Carter, C. Jr.

    1997-03-01

    Synchrotron white beam x-ray topography (SWBXT) and Nomarski optical microscopy (NOM) have been used to characterize 4H-SiC epilayers and to study the character of triangular inclusions therein. 4H-SiC substrates misoriented by a range of angles from (0001), as well as (1 1{bar 0}0) and (11 2{bar 0}) oriented substrates were used. No evidence was found for the nucleation of 3C-SiC inclusions at superscrew dislocations (along the [0001] axis) in the 4H-SiC substrates. Increasing the off-axis angle of the substrates from 3.5 to 6.5{degree} was found to greatly suppress the formation of the triangular inclusions. In the case of substrates misoriented by 8.0{degree} from (0001) toward [112{bar 0}], the triangular inclusions were virtually eliminated. The crystalline quality of 4H-SiC epilayers grown on the substrates misoriented by 8.0{degree} from (0001) was very good. For the (11{bar 0}0) and (112{bar 0}) samples, there is no indication of 3C-SiC inclusions in the epilayers. Possible formation mechanisms and the morphology of 3C-SiC inclusions are discussed. 17 refs., 13 figs.

  11. Wiggles and Wags: Dog 1--Fun Activities for You and Your Dog. 4-H Skills for Life Animal Series. National 4-H Curriculum. BU-08166

    ERIC Educational Resources Information Center

    National 4-H Council, 2005

    2005-01-01

    These guides are activity guides. Several fact-filled books about dogs are listed as resources on this guide. The activities are active, hands-on, and engaging and are guided by the 4-H motto: Learning by Doing. As youth explore a dog project topic of interest to them, they also practice essential life skills. Although a few dog project youth will…

  12. Using Multiple Youth Programming Delivery Modes to Drive the Development of Social Capital in 4-H Participants

    ERIC Educational Resources Information Center

    Kinsey, Sharon

    2013-01-01

    This article focuses on how 4-H youth participants are building social capital, or connections among individuals and community members, through their 4-H experiences. These experiences can be seen through the lens of such 4-H delivery modes as the traditional 4-H club, after-school programs, and school enrichment programs. In addition, other…

  13. Synthesis and characterization of 4-aryl-4H-chromenes from H-cardanol.

    PubMed

    Rao, Hulluru Surya Prakash; Kamalraj, Mani

    2014-09-01

    We have synthesized and characterized a variety of fat-soluble, low-melting and medicinally useful 4-aryl-4H-chromenes from H-cardanol (side-chain perhydrogenated cardanol, 3-pentadecylphenol), a renewable and low-cost product from locally grown cashew nut trees (Anacardium occidentale L.). We incorporated H-cardanol into the aromatic rings of either 4H-chromene or phenol, or both. Substitution of C4SMe in N-methyl-4-(methylthio)-3-nitro-4H-chromene-2-amines with H-cardanol was regio-specific at the C6 position. PMID:25918806

  14. Al4H7− is a resilient building block for aluminum hydrogen cluster materials

    PubMed Central

    Roach, P. J.; Reber, A. C.; Woodward, W. H.; Khanna, S. N.; Castleman, A. W.

    2007-01-01

    The formation and oxygen etching of AlnHm− clusters are characterized in a flow reactor experiment with first-principles theoretical investigations to demonstrate the exceptional stability of Al4H7−. The origin of the preponderance of Al4H7− in the mass spectra of hydrogenated aluminum anions and its resistance to O2 etching are discussed. Al4H7− is shown to have the ability to bond with ionic partners to form stable hydrides through addition of an alkali atom [XAl4H7 (X = Li-Cs)]. An intuitive model that can predict the existence of stable hydrogenated cluster species is proposed. The potential synthetic utility of the superatom assemblies built on these units is addressed. PMID:17823245

  15. Ohio 4-H Agents' and Volunteer Leaders' Perceptions of the Volunteer Leadership Development Program.

    ERIC Educational Resources Information Center

    Kwarteng, Joseph A.; And Others

    1988-01-01

    This study found that six areas of volunteer leadership development are important to volunteers and 4-H agents. The areas are (1) recruiting, (2) training, (3) motivation, (4) recognition, (5) retention, and (6) supervision. (JOW)

  16. Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers

    NASA Astrophysics Data System (ADS)

    Gelczuk, Ł.; Dąbrowska-Szata, M.; Sochacki, M.; Szmidt, J.

    2014-04-01

    Conventional deep level transient spectroscopy (DLTS) technique was used to study deep electron traps in 4H-SiC Junction Barrier Schottky (JBS) rectifiers. 4H-SiC epitaxial layers, doped with nitrogen and grown on standard n+-4H-SiC substrates were exposed to low-dose aluminum ion implantation process under the Schottky contact in order to form both JBS grid and junction termination extension (JTE), and assure good rectifying properties of the diodes. Several deep electron traps were revealed and attributed to impurities or intrinsic defects in 4H-SiC epitaxial layers, on the basis of comparison of their electrical parameters (i.e. activation energies, apparent capture cross sections and concentrations) with previously published results.

  17. Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation

    SciTech Connect

    Ikeda, Akihiro; Nishi, Koji; Ikenoue, Hiroshi; Asano, Tanemasa

    2013-02-04

    Phosphorus doping of 4H SiC is performed by KrF excimer laser irradiation of 4H SiC immersed in phosphoric acid. Phosphorus is incorporated to a depth of a few tens of nanometers at a concentration of over 10{sup 20}/cm{sup 3} without generating significant crystal defects. Formation of a pn junction diode with an ideality factor of 1.06 is demonstrated.

  18. Ferromagnetism in proton irradiated 4H-SiC single crystal

    SciTech Connect

    Zhou, Ren-Wei; Wang, Hua-Jie; Chen, Wei-Bin; Li, Fei; Liu, Xue-Chao Zhuo, Shi-Yi; Shi, Er-Wei

    2015-04-15

    Room-temperature ferromagnetism is observed in proton irradiated 4H-SiC single crystal. An initial increase in proton dose leads to pronounced ferromagnetism, accompanying with obvious increase in vacancy concentration. Further increase in irradiation dose lowers the saturation magnetization with the decrease in total vacancy defects due to the defects recombination. It is found that divacancies are the mainly defects in proton irradiated 4H-SiC and responsible for the observed ferromagnetism.

  19. Characterization of 100 mm diameter 4H-silicon carbide crystals with extremely low basal plane dislocation density

    SciTech Connect

    Dudley, M.; Zhang, N; Zhang, Y; Raghothamachar, B; Byrappa, S; Choi, G; Sanchez, E; Hansen, D; Drachev, R; Loboda, M

    2010-01-01

    Synchrotron White Beam X-ray Topography (SWBXT) studies are presented of basal plane dislocation (BPD) configurations and behavior in a new generation of 100mm diameter, 4H-SiC wafers with extremely low BPD densities (3-4 x 10{sup 2} cm{sup -2}). The conversion of non-screw oriented, glissile BPDs into sessile threading edge dislocations (TEDs) is observed to provide pinning points for the operation of single ended Frank-Read sources. In some regions, once converted TEDs are observed to re-convert back into BPDs in a repetitive process which provides multiple BPD pinning points.

  20. Characterization of 100 mm Diameter 4H-Silicon Carbide CrystalsWith Extremely Low Basal Plane Dislocation Density

    SciTech Connect

    M Dudley; N Zhang; Y Zhang; B Raghothamachar; S Byrappa; G Choi; E Drachev; M Loboda

    2011-12-31

    Synchrotron White Beam X-ray Topography (SWBXT) studies are presented of basal plane dislocation (BPD) configurations and behavior in a new generation of 100mm diameter, 4H-SiC wafers with extremely low BPD densities (3-4 x 10{sup 2} cm{sup -2}). The conversion of non-screw oriented, glissile BPDs into sessile threading edge dislocations (TEDs) is observed to provide pinning points for the operation of single ended Frank-Read sources. In some regions, once converted TEDs are observed to re-convert back into BPDs in a repetitive process which provides multiple BPD pinning points.

  1. Fabrication of High-Q Nanobeam Photonic Crystals in Epitaxially Grown 4H-SiC.

    PubMed

    Bracher, David O; Hu, Evelyn L

    2015-09-01

    Silicon carbide (SiC) is an intriguing material due to the presence of spin-active point defects in several polytypes, including 4H-SiC. For many quantum information and sensing applications involving such point defects, it is important to couple their emission to high quality optical cavities. Here we present the fabrication of 1D nanobeam photonic crystal cavities (PCC) in 4H-SiC using a dopant-selective etch to undercut a homoepitaxially grown epilayer of p-type 4H-SiC. These are the first PCCs demonstrated in 4H-SiC and show high quality factors (Q) of up to ∼7000 as well as low modal volumes of <0.5 (λ/n)(3). We take advantage of the high device yield of this fabrication method to characterize hundreds of devices and determine which PCC geometries are optimal. Additionally, we demonstrate two methods to tune the resonant wavelengths of the PCCs over 5 nm without significant degradation of the Q. Lastly, we characterize nanobeam PCCs coupled to luminescence from silicon vacancy point defects (V1, V2) in 4H-SiC. The fundamental modes of two such PCCs are tuned into spectral overlap with the zero phonon line (ZPL) of the V2 center, resulting in an intensity increase of up to 3-fold. These results are important steps on the path to developing 4H-SiC as a platform for quantum information and sensing. PMID:26305122

  2. Key contribution of eIF4H-mediated translational control in tumor promotion

    PubMed Central

    Vaysse, Charlotte; Philippe, Céline; Martineau, Yvan; Quelen, Cathy; Hieblot, Corinne; Renaud, Claire; Nicaise, Yvan; Desquesnes, Aurore; Pannese, Maria; Filleron, Thomas; Escourrou, Ghislaine; Lawson, Malcolm; Rintoul, Robert C.; Delisle, Marie Bernadette; Pyronnet, Stéphane; Brousset, Pierre; Prats, Hervé; Touriol, Christian

    2015-01-01

    Dysregulated expression of translation initiation factors has been associated with carcinogenesis, but underlying mechanisms remains to be fully understood. Here we show that eIF4H (eukaryotic translation initiation factor 4H), an activator of the RNA helicase eIF4A, is overexpressed in lung carcinomas and predictive of response to chemotherapy. In lung cancer cells, depletion of eIF4H enhances sensitization to chemotherapy, decreases cell migration and inhibits tumor growth in vivo, in association with reduced translation of mRNA encoding cell-proliferation (c-Myc, cyclin D1) angiogenic (FGF-2) and anti-apoptotic factors (CIAP-1, BCL-xL). Conversely, each isoform of eIF4H acts as an oncogene in NIH3T3 cells by stimulating transformation, invasion, tumor growth and resistance to drug-induced apoptosis together with increased translation of IRES-containing or structured 5′UTR mRNAs. These results demonstrate that eIF4H plays a crucial role in translational control and can promote cellular transformation by preferentially regulating the translation of potent growth and survival factor mRNAs, indicating that eIF4H is a promising new molecular target for cancer therapy. PMID:26498689

  3. Association analysis of the LTA4H gene polymorphisms and pulmonary tuberculosis in 9115 subjects

    PubMed Central

    Curtis, James; Kopanitsa, Liliya; Stebbings, Emma; Speirs, Arran; Ignatyeva, Olga; Balabanova, Yanina; Nikolayevskyy, Vladyslav; Hoffner, Sven; Horstmann, Rolf; Drobniewski, Francis; Nejentsev, Sergey

    2011-01-01

    Summary Immunoregulatory eicosanoids have been implicated in protection from mycobacterial infection in cell and animal models. Recently, a study of the zebrafish embryo demonstrated that mutants of the lta4h gene, which encodes the leukotriene A4 hydrolase (LTA4H) enzyme of the eicosanoid pathway, have hypersusceptibility to Mycobacterium marinum infection. It also reported that heterozygosity at the two single nucleotide polymorphisms rs1978331 and rs2660898 located in introns of the LTA4H gene, a human homologue of lta4h, is associated with protection from pulmonary tuberculosis. To replicate this association we genotyped six LTA4H gene polymorphisms in samples from 3703 pulmonary tuberculosis patients and 5412 healthy controls collected in Russia. We found no evidence of the protective effect of heterozygosity at the polymorphisms rs1978331 and rs2660898 (P = 0.29 and 0.49) and no association of the alleles of any of the six polymorphisms (P = 0.13–0.81). These results suggest that common polymorphisms in the LTA4H gene do not play any major role in susceptibility to clinical pulmonary tuberculosis. PMID:21112816

  4. Ferromagnetism in homogeneous (Al,Co)-codoped 4H-silicon carbides

    NASA Astrophysics Data System (ADS)

    Zhang, X. H.; Han, J. C.; Zhou, J. G.; Xin, C.; Zhang, Z. H.; Song, B.

    2014-08-01

    In view of the recent controversies on above room-temperature (RT) ferromagnetism (FM) in transition-metal (TM) doped silicon carbides (SiC), the present paper aims to shed some light on the natural origin of long-range magnetic order by investigating the (Al, Co)-doped 4H-SiC, both experimentally and theoretically. A combination of characterizations means including X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and X-ray absorption near-edge structure spectroscopy (XANES) measurement eliminated the presence of any nanoclusters or secondary phases as the source of FM. X-ray absorption near-edge structure spectroscopy analyses provided convincing evidence that no secondary phases such as Co metallic clusters were present when Co and Al are homogeneously inserted in the SiC matrix. RT FM originates from a composite mechanism based on the Ruderman-Kittel-Kasuya-Yosida, and double-exchange interactions. The dopant Al is found to stabilize the crystal structure as well as show the experimental possibility of tuning the magnetization by codoping.

  5. Infrared spectra and thermodynamic properties of CH4/H2O ices

    NASA Astrophysics Data System (ADS)

    Galvez, O.; Mate, B.; Herrero, V. J.; Escribano, R. M.

    2009-04-01

    The coexistence of solid methane and water ice has been observed in outer Solar System objects, in comets, and in interstellar ice mantles (1-3). CH4 is proposed to be the starting point of rich organic chemistry in the astrophysical media. This work presents an investigation on ice mixtures of methane and water. The samples were analysed by infrared spectroscopy. In the range of temperatures spanned in this study our investigations provide evidence of the existence of a distorted CH4 structure, characterized by an absorption band at 2900 cm-1, corresponding to the symmetric stretch motion of the molecule, forbidden by symmetry in the pure solid. A quantification of the amount of distorted CH4 trapped in the water ice structure, and its dependence on the ice generation procedure has been conducted. The CH4:H2O desorption energy has been determined. These and other findings will be discussed in the presentation. Boogert, A.C.A. "Interstellar Ices". Astrophysics of Dust, ASP Conference Series, Vol. 309, p. 547, 2004. A.N. Witt, G.C. Clayton. Voss, L.F. et al., "Methane thermodynamics in nanoporous ice: A new methane reservoir on Titan." J. Geophys. Res., 112, E05002, doi: 10.1029/2006JE002768, 2007.

  6. CVD Growth of 3C-SiC on 4H/6H Mesas

    SciTech Connect

    Neudeck,P.; Trunek, A.; Spry, D.; Powell, J.; Du, H.; Skowronski, M.; Huang, X.; Dudley, M.

    2006-01-01

    This article describes growth and characterization of the highest quality reproducible 3C-SiC heteroepitaxial films ever reported. By properly nucleating 3C-SiC growth on top of perfectly on-axis (0001) 4H-SiC mesa surfaces completely free of atomic scale steps and extended defects, growth of 3C-SiC mesa heterofilms completely free of extended crystal defects can be achieved. In contrast, nucleation and growth of 3C-SiC mesa heterofilms on top of 4H-SiC mesas with atomic-scale steps always results in numerous observable dislocations threading through the 3C-SiC epilayer. High-resolution X-ray diffraction (HRXRD) and high resolution cross-sectional transmission electron microscopy (HRXTEM) measurements indicate non-trivial, in-plane, lattice mismatch between the 3C and 4H layers. This mismatch is somewhat relieved in the step-free mesa case via misfit dislocations confined to the 3C/4H interfacial region without dislocations threading into the overlying 3C-SiC layer. These results indicate that the presence or absence of steps at the 3C/4H heteroepitaxial interface critically impacts the quality, defect structure, and relaxation mechanisms of single-crystal heteroepitaxial 3C-SiC films.

  7. Self-assembly of C4H-type hydrogenated graphene.

    PubMed

    Liu, Zilong; Xue, Qingzhong; Xing, Wei; Du, Yonggang; Han, Zhide

    2013-11-21

    We demonstrate by molecular dynamic (MD) simulations that patterned partially hydrogenated graphene (C4H) can self-assemble at room temperature. The main driving force of the self-assembly of C4H is due to the one-sided distribution of hydrogen and the corresponding asymmetric orientation of sp(3) bonding, there exists strong electrostatic repulsion between the relatively close H atoms. The simulations show that C4H can self-assemble into various carbon nanoscroll (CNS) structures, this is mainly controlled by its geometry (size and aspect ratio). And the carbon nanotube (CNT) is a good candidate to activate and guide C4H to form CNS, whose core size can be controlled. Meanwhile, a novel CNT/C4H core/shell composite nanostructure is also formed. The theoretical results shed important light on a feasible approach to fabricate high-quality CNS and other novel nanostructures including core/shell structures, which hold great potential applications in optics, optoelectronic devices, hydrogen storage, sensors, and energy storage in supercapacitors or batteries. PMID:24064528

  8. CFD Growth of 3C-SiC on 4H/6H Mesas

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Trunek, Andrew J.; Spry, David J.; Powell, J. Anthony; Du, Hui; Skowronski, Marek; Huang, XianRong; Dudley, Michael

    2006-01-01

    This article describes growth and characterization of the highest quality reproducible 3C-SiC heteroepitaxial films ever reported. By properly nucleating 3C-SiC growth on top of perfectly on-axis (0001) 4H-SiC mesa surfaces completely free of atomic scale steps and extended defects, growth of 3C-SiC mesa heterofilms completely free of extended crystal defects can be achieved. In contrast, nucleation and growth of 3C-SiC mesa heterofilms on top of 4H-SiC mesas with atomic-scale steps always results in numerous observable dislocations threading through the 3C-SiC epilayer. High-resolution X-ray diffraction and transmission electron microscopy measurements indicate non-trivial in-plane lattice mismatch between the 3C and 4H layers. This mismatch is somewhat relieved in the step-free mesa case via misfit dislocations confined to the 3C/4H interfacial region without dislocations threading into the overlying 3C-SiC layer. These results indicate that the presence or absence of steps at the 3C/4H heteroepitaxial interface critically impacts the quality, defect structure, and relaxation mechanisms of single-crystal heteroepitaxial 3C-SiC films.

  9. Electrical Characterization of 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Chen, Liangyu; Spry, David J.; Beheim, Glenn M.; Chang, Carl W.

    2014-01-01

    This work reports DC electrical characterization of a 76 mm diameter 4H-SiC JFET test wafer fabricated as part of NASA's on-going efforts to realize medium-scale ICs with prolonged and stable circuit operation at temperatures as high as 500 degC. In particular, these measurements provide quantitative parameter ranges for use in JFET IC design and simulation. Larger than expected parameter variations were observed both as a function of position across the wafer as well as a function of ambient testing temperature from 23 degC to 500 degC.

  10. The lta4h Locus Modulates Susceptibility to Mycobacterial Infection in Zebrafish and Humans

    PubMed Central

    Tobin, David M.; Vary, Jay C.; Ray, John P.; Walsh, Gregory S.; Dunstan, Sarah J.; Bang, Nguyen D.; Hagge, Deanna A.; Khadge, Saraswoti; King, Mary-Claire; Hawn, Thomas R.; Moens, Cecilia B.; Ramakrishnan, Lalita

    2010-01-01

    SUMMARY Exposure to Mycobacterium tuberculosis produces varied early outcomes, ranging from resistance to infection to progressive disease. Here we report results from a forward genetic screen in zebrafish larvae that identify multiple mutant classes with distinct patterns of innate susceptibility to Mycobacterium marinum. A hypersusceptible mutant maps to the lta4h locus encoding leukotriene A4 hydrolase, which catalyzes the final step in the synthesis of leukotriene B4 (LTB4), a potent chemoattractant and proinflammatory eicosanoid. lta4h mutations confer hypersusceptibility independent of LTB4 reduction, by redirecting eicosanoid substrates to anti-inflammatory lipoxins. The resultant anti-inflammatory state permits increased mycobacterial proliferation by limiting production of tumor necrosis factor. In humans, we find that protection from both tuberculosis and multibacillary leprosy is associated with heterozygosity for LTA4H polymorphisms that have previously been correlated with differential LTB4 production. Our results suggest conserved roles for balanced eicosanoid production in vertebrate resistance to mycobacterial infection. PMID:20211140

  11. Adult volunteerism in Pennsylvania 4-H natural resources programs for youth

    NASA Astrophysics Data System (ADS)

    Smith, Sanford Sherrick

    2001-07-01

    Pennsylvania's 4-H Youth Development Program relies on adult volunteers to reach youth with educational information and opportunities. Finding adults willing to do this volunteer work is challenging. This study looks at the current status of adult volunteerism with natural resources 4-H projects, and seeks to understand potential volunteers. The literature has much to offer in regards to general volunteer trends, management, motivations, and task preferences; however, few studies focus on volunteers in natural resources or environmental education. A telephone survey conducted with county 4-H agents revealed that only 3.2% of Pennsylvania's 4-H volunteers work with natural resources projects in 56 out of 67 counties, and that very few volunteers have any formal background in natural resources. Semi-structured interviews with 41 adult volunteers currently working with natural resources projects explored volunteer demographics, history, program design preferences, and ideas for seeking more volunteers. Findings from the telephone survey and the semi-structured interviews were used to generate a mail survey with large, random samples from three population groups: (1) 4-H Volunteers, (2) 4-H Parents, and (3) Natural Resources Professionals. Confidence with youth and subject matter, and adult willingness to volunteer was explored for each of the groups in relation to background, demographic characteristics, motivational needs, past and present volunteer activity, personal interests, and program design importance. Natural resources subject matter confidence was shown to be the most significant variable determining willingness to volunteer for all three groups. The variables that contributed to subject matter and youth confidence varied for each population. Key variables effecting willingness to volunteer included outdoor activity level, personal interest in natural resources, the need to fulfill feelings of social responsibility, and confidence with youth. Program design

  12. Synthesis, antifungal activity and docking study of 2-amino-4H-benzochromene-3-carbonitrile derivatives

    NASA Astrophysics Data System (ADS)

    Mirjalili, BiBi Fatemeh; Zamani, Leila; Zomorodian, Kamiar; Khabnadideh, Soghra; Haghighijoo, Zahra; Malakotikhah, Zahra; Ayatollahi Mousavi, Seyyed Amin; Khojasteh, Shaghayegh

    2016-07-01

    Pathogenic fungi are associated with diseases ranging from simple dermatosis to life-threatening infections, particularly in immunocompromised patients. During the past two decades, resistance to established antifungal drugs has increased dramatically and has made it crucial to identify novel antimicrobial compounds. Here, we selected 12 new compounds of 2-amino-4H-benzochromene-3-carbonitrile drivetives (C1-C12) for synthesis by using nano-TiCl4.SiO2 as efficient and green catalyst, then nine of synthetic compounds were evaluated against different species of fungi, positive gram and negative gram of bacteria. Standard and clinical strains of antibiotics sensitive and resistant fungi and bacteria were cultured in appropriate media. Biological activity of the 2-amino-4H-benzochromene-3-carbonitrile derivatives against fungi and bacteries were estimated by the broth micro-dilution method as recommended by clinical and laboratory standard institute (CLSI). In addition minimal fangicidal and bactericial concenteration of the compounds were also determined. Considering our results showed that compound 2-amino-4-(4-methyl benzoate)-4H-benzo[f]chromen-3-carbonitrile (C9) had the most antifungal activity against Aspergillus clavatus, Candida glabarata, Candida dubliniensis, Candida albicans and Candida tropicalis at concentrations ranging from 8 to ≤128 μg/mL. Also compounds 2-amino-4-(3,4-dimethoxyphenyl)-4H-benzo[f]chromen-3-carbonitrile (C4) and 2-amino-4-(4-isopropylphenyl)-4H-benzo[f]chromen-3-carbonitrile (C3) had significant inhibitory activities against Epidermophyton floccosum following 2-amino-4-(4-methylbenzoate)-4H-benzo[f]chromen-3-carbonitrile (C9), respectively. Docking simulation was performed to insert compounds C3, C4 and C9 in to CYP51 active site to determine the probable binding model.

  13. Synthesis, antifungal activity and docking study of 2-amino-4H-benzochromene-3-carbonitrile derivatives

    NASA Astrophysics Data System (ADS)

    Mirjalili, BiBi Fatemeh; Zamani, Leila; Zomorodian, Kamiar; Khabnadideh, Soghra; Haghighijoo, Zahra; Malakotikhah, Zahra; Ayatollahi Mousavi, Seyyed Amin; Khojasteh, Shaghayegh

    2016-07-01

    Pathogenic fungi are associated with diseases ranging from simple dermatosis to life-threatening infections, particularly in immunocompromised patients. During the past two decades, resistance to established antifungal drugs has increased dramatically and has made it crucial to identify novel antimicrobial compounds. Here, we selected 12 new compounds of 2-amino-4H-benzochromene-3-carbonitrile drivetives (C1-C12) for synthesis by using nano-TiCl4.SiO2 as efficient and green catalyst, then nine of synthetic compounds were evaluated against different species of fungi, positive gram and negative gram of bacteria. Standard and clinical strains of antibiotics sensitive and resistant fungi and bacteria were cultured in appropriate media. Biological activity of the 2-amino-4H-benzochromene-3-carbonitrile derivatives against fungi and bacteries were estimated by the broth micro-dilution method as recommended by clinical and laboratory standard institute (CLSI). In addition minimal fangicidal and bactericial concenteration of the compounds were also determined. Considering our results showed that compound 2-amino-4-(4-methyl benzoate)-4H-benzo[f]chromen-3-carbonitrile (C9) had the most antifungal activity against Aspergillus clavatus, Candida glabarata, Candida dubliniensis, Candida albicans and Candida tropicalis at concentrations ranging from 8 to ≤128 μg/mL. Also compounds 2-amino-4-(3,4-dimethoxyphenyl)-4H-benzo[f]chromen-3-carbonitrile (C4) and 2-amino-4-(4-isopropylphenyl)-4H-benzo[f]chromen-3-carbonitrile (C3) had significant inhibitory activities against Epidermophyton floccosum following 2-amino-4-(4-methylbenzoate)-4H-benzo[f]chromen-3-carbonitrile (C9), respectively. Docking simulation was performed to insert compounds C3, C4 and C9 in to CYP51 active site to determine the probable binding model.

  14. Transition metal swift heavy ion implantation on 4H-SiC

    NASA Astrophysics Data System (ADS)

    Ali, A. Ashraf; Kumar, J.; Ramakrishnan, V.; Asokan, K.

    2016-03-01

    This work reports on the realization of Quantum Ring (QR) and Quantum Dot (QD) like structures on 4H-SiC through SHI implantation and on their Raman studies. 4H-SiC is SHI implanted with Transition Metal (TM) Ni ion at different fluences. It is observed that a vibrational mode emerges as the result of Ni ion implantation. The E2 (TO) and the A1 (LO) are suppressed as the fluence increases. In this paper Raman and AFM studies have been performed at room temperature and the queer anomalies are addressed so new devices can be fabricated.

  15. Crystal and molecular structure of 2,4,4-trisubstituted 5-amino-4 H-imidazoles

    NASA Astrophysics Data System (ADS)

    Bellanato, J.; Avendaño, C.; Ramos, M. T.; Smith-Verdier, P.; Florencio, F.; Garcia-Blanco, S.

    Three 5-amino-4 H-imidazole derivatives 2(2-pyridyl) and 2-ethoxycarbonyl-4,4-pentamethylene-5-amino-and 2(2-pyridyl)-4,4-dimethyl-5(2-pyridylamino)4 H-imidazoles have been studied by i.r. and Raman spectroscopy. The crystal structure of one has been determined by X-ray diffraction. The tautomeric amino-imino equilibrium in different working conditions is also studied from spectroscopic data. The amino and the unconjugated imino forms are characterized.

  16. Analysis of Surface Defects on the Reverse Characteristics of 4H-SiC JBS Diode

    NASA Astrophysics Data System (ADS)

    Katsuno, Takashi; Watanabe, Yukihiko; Fujiwara, Hirokazu; Konishi, Masaki; Yamamoto, Takeo; Endo, Takeshi; Ishiko, Masayasu

    The good relations between the reverse characteristics of 4H-SiC JBS diodes and the surface defects were obtained. The reverse characteristics of 4H-SiC JBS diodes were categorized in three groups as follows: (A) low blocking voltage, (B) high leakage current and (C) low leakage current. The groups of (A) and (B) were caused by the existences of the micropipe and small particles, and the carrot-like defects on the SiC surfaces, respectively. In group (C), there was no defect on the surfaces observed by the optical microscope. The structure of carrot-like defect was analyzed by the cathode-luminescence and TEM.

  17. Managing for Motivation: Herzberg's Motivation-Hygiene Theory and Its Application to 4-H Leadership. National Intern Report.

    ERIC Educational Resources Information Center

    Freeman, Walter J.

    A study examined the organizational factors contributing to the motivation of 4-H volunteer leaders. A modified form of Herzberg's Motivation-Hygiene Theory served as the research design of the study. A total of 149 4-H leaders were interviewed regarding thirteen job factors: recognition; personal growth; relationships with other 4-H leaders,…

  18. Current Practices for Training Staff to Accommodate Youth with Special Health Care Needs in the 4-H Camp Setting

    ERIC Educational Resources Information Center

    Mouton, Lauren; Bruce, Jacklyn

    2013-01-01

    The theory of inclusion is the foundation for the study reported here; inclusion is a focus not only of formal education, but also of nonformal educational settings such as 4-H. Ideally, 4-H camps are designed to serve youth of all backgrounds and abilities. By accommodating youth with special health care needs, 4-H camps are effectively meeting…

  19. E-Learning for 4-H Volunteers: Who Uses It, and What Can We Learn from Them?

    ERIC Educational Resources Information Center

    Ouellette, Kristy L.; Lesmeister, Marilyn K.; Lobley, Jennifer; Gross, Kerry M.

    2014-01-01

    Orienting and training 4-H volunteers are critical to individuals and the organization. The two-part study reported here re-establishes the profile of the 4-H volunteer and evaluates both the format and content of e-Learning for 4-H Volunteers modules launched in 2006. Volunteers from seven states perceived that online modules made learning more…

  20. Stress Characterization of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method.

    PubMed

    Yoshikawa, Masanobu; Kosaka, Kenichi; Seki, Hirohumi; Kimoto, Tsunenobu

    2016-07-01

    We measured the depolarized and polarized Raman spectra of a 4H-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) and found that compressive stress of approximately 20 MPa occurs under the source and gate electrodes and tensile stress of approximately 10 MPa occurs between the source and gate electrodes. The experimental result was in close agreement with the result obtained by calculation using the finite element method (FEM). A combination of Raman spectroscopy and FEM provides much data on the stresses in 4H-SiC MOSFET. PMID:27165155

  1. Depth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC measured using coherent acoustic phonons

    NASA Astrophysics Data System (ADS)

    Baydin, Andrey; Krzyzanowska, Halina; Dhanunjaya, Munthala; Nageswara Rao, S. V. S.; Davidson, Jimmy L.; Feldman, Leonard C.; Tolk, Norman H.

    2016-06-01

    Silicon carbide (SiC) is a promising material for new generation electronics including high power/high temperature devices and advanced optical applications such as room temperature spintronics and quantum computing. Both types of applications require the control of defects particularly those created by ion bombardment. In this work, modification of optical constants of 4H-SiC due to hydrogen implantation at 180 keV and at fluences ranging from 1014 to 1016 cm-2 is reported. The depth dependence of the modified optical constants was extracted from coherent acoustic phonon spectra. Implanted spectra show a strong dependence of the 4H-SiC complex refractive index depth profile on H+ fluence. These studies provide basic insight into the dependence of optical properties of 4H silicon carbide on defect densities created by ion implantation, which is of relevance to the fabrication of SiC-based photonic and optoelectronic devices.

  2. Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals

    NASA Astrophysics Data System (ADS)

    Taniguchi, Chisato; Ichimura, Aiko; Ohtani, Noboru; Katsuno, Masakazu; Fujimoto, Tatsuo; Sato, Shinya; Tsuge, Hiroshi; Yano, Takayuki

    2016-04-01

    The formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals was theoretically investigated. A novel theoretical model based on the so-called quantum well action mechanism was proposed; the model considers several factors, which were overlooked in a previously proposed model, and provides a detailed explanation of the annealing-induced formation of double layer Shockley-type stacking faults in heavily nitrogen-doped 4H-SiC crystals. We further revised the model to consider the carrier distribution in the depletion regions adjacent to the stacking fault and successfully explained the shrinkage of stacking faults during annealing at even higher temperatures. The model also succeeded in accounting for the aluminum co-doping effect in heavily nitrogen-doped 4H-SiC crystals, in that the stacking fault formation is suppressed when aluminum acceptors are co-doped in the crystals.

  3. Report on the 4-h rule and National Emergency Access Target (NEAT) in Australia: time to review.

    PubMed

    Staib, Andrew; Sullivan, Clair; Griffin, Bronwyn; Bell, Anthony; Scott, Ian

    2016-06-01

    Objective The aim of the present study was to provide a summary of a systematic review of literature reporting benefits and limitations of implementing National Emergency Access Target (NEAT), a target stipulating that a certain proportion of patients presenting to hospital emergency departments are admitted or discharged within 4h of presentation. Methods A systematic review of published literature using specific search terms, snowballing techniques applied to retrieved references and Google searches was performed. Results are presented as a narrative synthesis given the heterogeneity of included studies. Results Benefits of a time-based target for emergency care are improved timeliness of emergency care and reduced in-hospital mortality for emergency admissions to hospital. Limitations centre on using a process measure (time) alone devoid of any monitoring of patient outcomes, the threshold nature of a time target and the fact that currently NEAT combines the measurement of clinical management of two very different patient cohorts seeking emergency care: less acute patients discharged home and more acute patients admitted to hospital. Conclusions Time-based access targets for emergency presentations are associated with significant improvements in in-hospital mortality for emergency admissions. However, other patient-important outcomes are deserving of attention, choice of targets needs to be validated by empirical evidence of patient benefit and single targets need to be partitioned into separate targets pertaining to admitted and discharged patients. What is known about the topic? Time targets for emergency care originated in the UK. The introduction of NEAT in Australia has been controversial. NEAT directs that a certain proportion of patients will be admitted or discharged from an emergency department (ED) within 4h. Recent dissolution of the Australian National Partnership Agreement (which provided hospitals with financial incentives for achieving NEAT

  4. Synthesis of 2H-Azirines by Iridium-Catalyzed Decarboxylative Ring Contraction of Isoxazol-5(4H)-ones.

    PubMed

    Okamoto, Kazuhiro; Shimbayashi, Takuya; Yoshida, Masato; Nanya, Atsushi; Ohe, Kouichi

    2016-06-13

    A phosphine-free iridium-catalyzed reaction of isoxazol-5(4H)-ones (isoxazolones) has been developed, and affords 2H-azirines through decarboxylation and ring contraction. This method provides an efficient and environmentally benign protocol which could replace the conventional approaches used to synthesize 2H-azirines. PMID:27125870

  5. Carbon nanoscroll from C4H/C4F-type graphene superlattice: MD and MM simulation insights.

    PubMed

    Liu, Zilong; Xue, Qingzhong; Tao, Yehan; Li, Xiaofang; Wu, Tiantian; Jin, Yakang; Zhang, Zhongyang

    2015-02-01

    Morphology manipulation opens up a new avenue for controlling and tailoring the functional properties of graphene, enabling the exploration of graphene-based nanomaterials. Through mixing single-side-hydrogenated graphene (C4H) with fluorinated graphene (C4F) on one single sheet, the C4H/C4F-type graphene superlattices can self-scroll at room temperature. We demonstrate using molecular dynamic (MD) simulations that different proportions, sizes, directions of hydrogenation and fluorination, and geometry of graphene have a great influence on the self-scrolling of superlattices into a variety of well-defined carbon nanoscrolls (CNSs), thus providing a controllable approach to tune their structures. Based on molecular mechanics (MM) simulations, the CNSs bear more than eight times the radial pressure than that of their multiwalled carbon nanotube (MWNT) counterparts, and an excellent radial elasticity of CNSs is also shown. Compared with conventional CNSs, these novel CNSs are endowed with more ample and flexible heterogeneous structures due to the on-demand hydrogenation and fluorination. Besides, this work provides a feasible route to achieve the necessary electronic and optical changes to be applied in graphene device applications. PMID:25531924

  6. Understanding the amorphous-to-microcrystalline silicon transition in SiF4/H2/Ar gas mixtures

    NASA Astrophysics Data System (ADS)

    Dornstetter, Jean-Christophe; Bruneau, Bastien; Bulkin, Pavel; Johnson, Erik V.; Roca i Cabarrocas, Pere

    2014-06-01

    We report on the growth of microcrystalline silicon films from the dissociation of SiF4/H2/Ar gas mixtures. For this growth chemistry, the formation of HF molecules provides a clear signature of the amorphous to microcrystalline growth transition. Depositing films from silicon tetrafluoride requires the removal of F produced by SiF4 dissociation, and this removal is promoted by the addition of H2 which strongly reacts with F to form HF molecules. At low H2 flow rates, the films grow amorphous as all the available hydrogen is consumed to form HF. Above a critical flow rate, corresponding to the full removal of F, microcrystalline films are produced as there is an excess of atomic hydrogen in the plasma. A simple yet accurate phenomenological model is proposed to explain the SiF4/H2 plasma chemistry in accordance with experimental data. This model provides some rules of thumb to achieve high deposition rates for microcrystalline silicon, namely, that increased RF power must be balanced by an increased H2 flow rate.

  7. More than Cows & Cooking: Newest Research Shows the Impact of 4-H.

    ERIC Educational Resources Information Center

    Astroth, Kirk A.; Haynes, George W.

    2002-01-01

    A Montana survey of 2,500 students' use of out-of-school time found that only 17% reported no involvement in out-of-school activities. 4-H participants were less likely to shoplift, steal, smoke cigarettes, ride with a drunk driver, or damage property. They were more likely to develop self-confidence and social competence, demonstrate leadership,…

  8. 4-H Horticulture Project Activity Guides. Leader's Guide and Units 1-3.

    ERIC Educational Resources Information Center

    Illinois Univ., Urbana. Cooperative Extension Service.

    This document, concerning the 4-H horticulture project, includes a leader's guide and three youth activity guides. The leader's guide can be used to plan group project meetings that are both fun and educational. Activities can be adapted to various age groups. The leader's guide includes basic information for growing plants indoors and outdoors,…

  9. Promoting the Essential Elements of 4-H Youth Development through an Experiential Learning Model

    ERIC Educational Resources Information Center

    Meyer, Shelley; Jones, Kenneth R.

    2015-01-01

    The purpose of the project reported here was to apply Experiential Learning Theory to a context involving middle and high school aged youth while assessing the four concepts (belonging, mastery, independence, and generosity) in relation to the 4-H youth development essential elements. The conclusions of the project's evaluation suggest…

  10. 4-H Chickquest: Connecting Agri-Science with STEM Standards in Urban Schools

    ERIC Educational Resources Information Center

    Horton, Robert L.; Krieger, Jackie; Halasa, Katrina

    2013-01-01

    While young students are more capable of scientific inquiry than previously believed, elementary school teachers are often inexperienced in and lack confidence with teaching science. ChickQuest is a 4-H-created embryology curriculum for third-graders that meets Ohio state science standards, teaches STEM skills, and promotes ongoing interaction…

  11. Possession, Transportation, and Use of Firearms by Older Youth in 4-H Shooting Sports Programs

    ERIC Educational Resources Information Center

    White, David J.; Williver, S. Todd

    2014-01-01

    Thirty years ago we would think nothing of driving to school with a jackknife in our pocket or rifle in the gun rack. Since then, the practices of possessing, transporting, and using firearms have been limited by laws, rules, and public perception. Despite restrictions on youth, the Youth Handgun Safety Act does afford 4-H shooting sports members…

  12. Stakeholder Satisfaction with a 4-H Extension Program for Five- to Eight-Year-Old Children.

    ERIC Educational Resources Information Center

    Scheer, Scott D.; Lafontaine, Kenneth R.

    1999-01-01

    A 4-H K-2 program was evaluated by 277 parents, 144 volunteers, and 44 extension agents. These stakeholders believed the program was beneficial and effective in improving children's life skills (self-esteem, making friends, making choices, learning and physical skills). (SK)

  13. Life Skill Development Related to Participation in 4-H Animal Science Projects.

    ERIC Educational Resources Information Center

    Ward, Carol Knowlton

    1996-01-01

    Alumni of 4-H animal science programs in New Jersey were surveyed (n=52). Participation had a positive influence on life skill development, especially "accepting responsibility." Experience with shows and judging was beneficial to public speaking/job interview skills. Although many were not in animal science careers, they enjoyed related hobbies.…

  14. The Big E (Energy). 4-H Leader's Guide for Units 2 & 3.

    ERIC Educational Resources Information Center

    Caldwell, William; And Others

    This leader's guide is designed for units 2 and 3 of the Nebraska 4-H Energy Project. The goals of the project are to: (1) help young people understand energy problems related to life styles; (2) use energy resources carefully; (3) guide members in choosing their own energy alternatives; and (4) to enjoy together the challenges and creativity of…

  15. Bufexamac ameliorates LPS-induced acute lung injury in mice by targeting LTA4H.

    PubMed

    Xiao, Qiang; Dong, Ningning; Yao, Xue; Wu, Dang; Lu, Yanli; Mao, Fei; Zhu, Jin; Li, Jian; Huang, Jin; Chen, Aifang; Huang, Lu; Wang, Xuehai; Yang, Guangxiao; He, Guangyuan; Xu, Yong; Lu, Weiqiang

    2016-01-01

    Neutrophils play an important role in the occurrence and development of acute lung injury (ALI). Leukotriene B4 (LTB4), a hydrolysis product of epoxide leukotriene A4 (LTA4) catalyzed by LTA4 hydrolase (LTA4H), is one of the most potent chemoattractants for neutrophil. Bufexamac is a drug widely used as an anti-inflammatory agent on the skin, however, the mechanism of action is still not fully understood. In this study, we found bufexamac was capable of specifically inhibiting LTA4H enzymatic activity and revealed the mode of interaction of bufexamac and LTA4H using X-ray crystallography. Moreover, bufexamac significantly prevented the production of LTB4 in neutrophil and inhibited the fMLP-induced neutrophil migration through inhibition of LTA4H. Finally, bufexamac significantly attenuated lung inflammation as reflected by reduced LTB4 levels and weakened neutrophil infiltration in bronchoalveolar lavage fluid from a lipopolysaccharide-induced ALI mouse model. In summary, our study indicates that bufexamac acts as an inhibitor of LTB4 biosynthesis and may have potential clinical applications for the treatment of ALI. PMID:27126280

  16. Temperature Dependence of Attenuation of Coplanar Waveguide on 4H High Resistivity SIC Through 540C

    NASA Technical Reports Server (NTRS)

    Ponchak, G. E.; Schwartz, Z.; Alterovitz, S. A.; Downey, A. N.; Freeman, J. C.

    2003-01-01

    For the first time, the temperature and frequency dependence of the attenuation of a Coplanar Waveguide (CPW) on 4H, High Resistivity Sic substrate is reported. The low frequency attenuation increases by 2 dB/cm at 500 C and the high frequency attenuation increases by 3.3 dB/cm at 500 C compared to room temperature.

  17. The Value of 4-H Judging Teams--Missouri Dairy Judging Alumni Survey

    ERIC Educational Resources Information Center

    Deaver, Karla; Probert, Ted

    2016-01-01

    Former Missouri 4-H Dairy Judging Team members responded to a survey about life skills development and the value of the judging team experience. Results of the survey indicate that judging team experience was highly influential in the development of communication, public speaking, and presentation skills. Respondents also indicated that judging…

  18. Bufexamac ameliorates LPS-induced acute lung injury in mice by targeting LTA4H

    PubMed Central

    Xiao, Qiang; Dong, Ningning; Yao, Xue; Wu, Dang; Lu, Yanli; Mao, Fei; Zhu, Jin; Li, Jian; Huang, Jin; Chen, Aifang; Huang, Lu; Wang, Xuehai; Yang, Guangxiao; He, Guangyuan; Xu, Yong; Lu, Weiqiang

    2016-01-01

    Neutrophils play an important role in the occurrence and development of acute lung injury (ALI). Leukotriene B4 (LTB4), a hydrolysis product of epoxide leukotriene A4 (LTA4) catalyzed by LTA4 hydrolase (LTA4H), is one of the most potent chemoattractants for neutrophil. Bufexamac is a drug widely used as an anti-inflammatory agent on the skin, however, the mechanism of action is still not fully understood. In this study, we found bufexamac was capable of specifically inhibiting LTA4H enzymatic activity and revealed the mode of interaction of bufexamac and LTA4H using X-ray crystallography. Moreover, bufexamac significantly prevented the production of LTB4 in neutrophil and inhibited the fMLP-induced neutrophil migration through inhibition of LTA4H. Finally, bufexamac significantly attenuated lung inflammation as reflected by reduced LTB4 levels and weakened neutrophil infiltration in bronchoalveolar lavage fluid from a lipopolysaccharide-induced ALI mouse model. In summary, our study indicates that bufexamac acts as an inhibitor of LTB4 biosynthesis and may have potential clinical applications for the treatment of ALI. PMID:27126280

  19. Participant Comfort with and Application of Inquiry-Based Learning: Results from 4-H Volunteer Training

    ERIC Educational Resources Information Center

    Haugen, Heidi; Stevenson, Anne; Meyer, Rebecca L.

    2016-01-01

    This article explores how a one-time training designed to support learning transfer affected 4-H volunteers' comfort levels with the training content and how comfort levels, in turn, affected the volunteers' application of tools and techniques learned during the training. Results of a follow-up survey suggest that the training participants…

  20. 4H-SiC photodiode model for DC SPICE circuit simulation

    NASA Astrophysics Data System (ADS)

    Kociubiński, Andrzej; Duk, Mariusz; Korona, Mateusz; Muzyka, Krzysztof

    2015-09-01

    Technology, characterization and in particularly modeling of 4H-SiC photodiode have been presented in this paper. Modeling and simulation has been performed using PSPICE environment. Comparison of simulation with real results for electrical characteristic (I-V) of circular SiC photodiodes has been also presented.

  1. Associated Factors in Recruitment and Retention of 4-H Members in West Virginia.

    ERIC Educational Resources Information Center

    Wingenbach, Gary J.; Meighan, Terence; Lawrence, Layle D.; Gartin, Stacy A.; Woloshuk, Jean M.

    1999-01-01

    Extension agents and 4-H Club leaders (n=115) rated the following as effective recruitment techniques: an active club, word of mouth, interesting programs, and members' active role. Successful retention techniques included effective leaders; praise, motivation, and encouragement; and fun meetings, programs, and activities. (SK)

  2. An Evaluation of the 4-H "Health Rocks" Program: Implications for Program Improvement

    ERIC Educational Resources Information Center

    Self, Carlton; Morgan, A. Christian; Fuhrman, Nicholas E.; Navarro, Maria

    2013-01-01

    The National 4-H Council developed the Health Rocks substance abuse educational program to prevent youth from engaging in risky behaviors. The program was presented in 2010 to more than 8,000 middle school youth in Georgia. A post-then-pre evaluation was conducted with youth who completed 10 hours of instruction to determine if changes in youth…

  3. South Carolina's Model for Initiating Hispanic 4-H Clubs

    ERIC Educational Resources Information Center

    Lippert, Robert; Rembert, Kellye

    2012-01-01

    Over the past 5 years, through the initiative of several county Extension agents, South Carolina 4-H has established a successful model for bringing Hispanic youth into our program. We have found the most effective method is to initiate contact and establish partnerships with the principals and ESOL instructors in the local schools. Through this…

  4. The Big E (Energy). 4-H Leader's Guide [for Unit 1].

    ERIC Educational Resources Information Center

    Caldwell, William; And Others

    This guide is designed for leaders of the Nebraska 4-H Energy Project. The goals of the project are to: (1) help young people understand energy problems related to life styles; (2) use energy resources carefully; (3) guide members in choosing their own energy alternatives; and (4) enjoy together the challenges and creativity of finding energy…

  5. A Partnership Model for Training Episodic Environmental Stewardship 4-H Volunteers

    ERIC Educational Resources Information Center

    Young, Jane Chin; Alexander, Janice; Smith, Martin H.

    2013-01-01

    The Marin Environmental Stewardship pilot project demonstrates the potential for a partnership model that brings together external and internal collaborators to recruit and train episodic 4-H volunteers to meet environmental education needs within a community. The clientele served by the volunteers trained through the project was at-risk, urban…

  6. Using multiple youth programming delivery modes to drive the development of social capital in 4-H participants.

    PubMed

    Kinsey, Sharon

    2013-06-01

    This article focuses on how 4-H youth participants are building social capital, or connections among individuals and community members, through their 4-H experiences. These experiences can be seen through the lens of such 4-H delivery modes as the traditional 4-H club, after-school programs, and school enrichment programs. In addition, other experiences such as leadership camps and conferences or activities in the local community afford youth the opportunity to build the relationships, trust, and respect reflective of social capital. Examples are derived from 4-H program participants-urban, suburban and rural youth-in Camden County, New Jersey. PMID:23878086

  7. High efficiency 4H-SiC betavoltaic power sources using tritium radioisotopes

    NASA Astrophysics Data System (ADS)

    Thomas, Christopher; Portnoff, Samuel; Spencer, M. G.

    2016-01-01

    Realization of an 18.6% efficient 4H-silicon carbide (4H-SiC) large area betavoltaic power source using the radioisotope tritium is reported. A 200 nm 4H-SiC P+N junction is used to collect high-energy electrons. The electron source is a titanium tritide (TiH3x) foil, or an integrated titanium tritide region formed by the diffusion of tritium into titanium. The specific activity of the source is directly measured. Dark current measured under short circuit conditions was less than 6.1 pA/cm2. Samples measured with an external tritium foil produced an open circuit voltage of 2.09 V, short circuit current of 75.47 nA/cm2, fill factor of 0.86, and power efficiency of 18.6%. Samples measured with an integrated source produced power efficiencies of 12%. Simulations were done to determine the beta spectrum (modified by self absorption) exiting the source and the electron hole pair generation function in the 4H-SiC. The electron-hole pair generation function in 4H-SiC was modeled as a Gaussian distribution, and a closed form solution of the continuity equation was used to analyze the cell performance. The effective surface recombination velocity in our samples was found to be 105-106 cm/s. Our analysis demonstrated that the surface recombination dominates the performance of a tritium betavoltaic device but that using a thin P+N junction structure can mitigate some of the negative effects.

  8. SPECTROSCOPIC EFFECTS IN CH{sub 4}/H{sub 2}O ICES

    SciTech Connect

    Galvez, Oscar; Mate, Belen; Herrero, Victor J.; Escribano, Rafael

    2009-10-01

    Recent observations of CH{sub 4} in different astrophysical objects encourage laboratory research on methane/water ice mixtures. An IR spectroscopy laboratory investigation is presented on these systems. Co-deposited samples are formed by vapor deposition of CH{sub 4} and H{sub 2}O on a cold substrate, in a wide range of stoichiometries, from very diluted mixtures to CH{sub 4}/H{sub 2}O = 2.5 values. Samples are prepared at 14 K and at 40 K, and their temperature behavior is studied when they are warmed up to 60 K. The spectroscopic analysis is centered on the methane features, and also on the water dangling bonds (DBs) that appear in the spectra of the mixtures. The IR forbidden nu{sub 1} band shows up in the spectrum (3.44 {mu}m), indicating some form of distorted methane. The combination bands nu{sub 3} + nu{sub 4} and nu{sub 1} + nu{sub 4} are seen at 2.32 and 2.38 {mu}m, and the nu{sub 2} + nu{sub 3} band weakly at 2.21 {mu}m. Whereas nu{sub 3} is not shifted in spectra of mixed samples, the wavenumber peak of nu{sub 4} and its combination bands vary in a 6 cm{sup -1} range, providing a possible estimation for the relative methane concentration in the sample. Bands in the spectra of mixtures are always broader than their counterparts in pure CH{sub 4} ice. The intensity of nu{sub 4} appears to increase in mixed samples with respect to the pure solid. Raising the temperature of the ices up to 60 K liberates part of the methane, but a fraction is retained with a maximum value of approx7% +- 2%. This limit may provide information on the temperature properties of astrophysical objects. The different spectral characteristics of water DBs with increasing methane proportion in mixed samples can also furnish information to estimate the stoichiometry of the mixture.

  9. Human pharmacology of 3,4-methylenedioxymethamphetamine (MDMA, ecstasy) after repeated doses taken 4 h apart Human pharmacology of MDMA after repeated doses taken 4 h apart.

    PubMed

    Farré, Magí; Tomillero, Angels; Pérez-Mañá, Clara; Yubero, Samanta; Papaseit, Esther; Roset, Pere-Nolasc; Pujadas, Mitona; Torrens, Marta; Camí, Jordi; de la Torre, Rafael

    2015-10-01

    3,4-Methylenedioxymethamphetamine (MDMA, ecstasy) is a popular psychostimulant, frequently associated with multiple administrations over a short period of time. Repeated administration of MDMA in experimental settings induces tolerance and metabolic inhibition. The aim is to determine the acute pharmacological effects and pharmacokinetics resulting from two consecutive 100mg doses of MDMA separated by 4h. Ten male volunteers participated in a randomized, double-blind, crossover, placebo-controlled trial. The four conditions were placebo plus placebo, placebo plus MDMA, MDMA plus placebo, and MDMA plus MDMA. Outcome variables included pharmacological effects and pharmacokinetic parameters. After a second dose of MDMA, most effects were similar to those after a single dose, despite a doubling of MDMA concentrations (except for systolic blood pressure and reaction time). After repeated MDMA administration, a 2-fold increase was observed in MDMA plasma concentrations. For a simple dose accumulation MDMA and MDA concentrations were higher (+23.1% Cmax and +17.1% AUC for MDMA and +14.2% Cmax and +10.3% AUC for MDA) and HMMA and HMA concentrations lower (-43.3% Cmax and -39.9% AUC for HMMA and -33.2% Cmax and -35.1% AUC for HMA) than expected, probably related to MDMA metabolic autoinhibition. Although MDMA concentrations doubled after the second dose, most pharmacological effects were similar or slightly higher in comparison to the single administration, except for systolic blood pressure and reaction time which were greater than predicted. The pharmacokinetic-effects relationship suggests that when MDMA is administered at a 4h interval there exists a phenomenon of acute tolerance to its effects. PMID:26073279

  10. High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

    NASA Astrophysics Data System (ADS)

    Chowdhury, Iftekhar; Chandrasekhar, M. V. S.; Klein, Paul B.; Caldwell, Joshua D.; Sudarshan, Tangali

    2011-02-01

    Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0 0 0 1) 8° off-axis substrates. We discuss the use of dichlorosilane as the Si-precursor for 4H-SiC epitaxial growth as it provides the most direct decomposition route into SiCl 2, which is the predominant growth species in chlorinated chemistries. A specular surface morphology was attained by limiting the hydrogen etch rate until the system was equilibrated at the desired growth temperature. The RMS roughness of the grown films ranged from 0.5-2.0 nm with very few morphological defects (carrots, triangular defects, etc.) being introduced, while enabling growth rates of 30-100 μm/h, 5-15 times higher than most conventional growths. Site-competition epitaxy was observed over a wide range of C/Si ratios, with doping concentrations <1×10 14 cm -3 being recorded. X-ray rocking curves indicated that the epilayers were of high crystallinity, with linewidths as narrow as 7.8 arcsec being observed, while microwave photoconductive decay (μPCD) measurements indicated that these films had high injection (ambipolar) carrier lifetimes in the range of 2 μs.

  11. A study of CH4/H2O ices by infrared spectroscopy

    NASA Astrophysics Data System (ADS)

    Herrero, Víctor J.; Escribano, Rafael; Gálvez, Óscar; Maté, Belén.; Moreno, Miguel A.

    2010-05-01

    The coexistence of solid methane and water ice has been observed in outer Solar System objects, and in interstellar ice mantles (1-3). It has been also conjectured that interactions between methane and water ice might be of relevance for the climate of Solar System objects like Titan (4) . To extract valuable information from the observed spectra (temperature, pressure, chemical speciation, etc.) thorough laboratory studies are required. This work presents an investigation on ice mixtures of methane and water, studied by infrared spectroscopy. The spectra provide evidence of a distorted CH4 structure, characterized by an absorption band at 2900 cm-1, forbidden by symmetry in the pure solid. We present an estimation of the amount of distorted CH4 trapped in the water ice structure and its dependence on the ice generation procedure. In addition, the presence of methane clusters inside the sample directly affects the frequency and intensity of the dangling bonds of water. When CH4 is deposited on water ices, the adsorption process follows a Type I isotherm graphic, indicating the microporous nature of the ices. We have also determined the CH4:H2O desorption energy and measured the dependence of the position and widths of the IR bands as a function of the stoichiometry of the samples. (1) J. Licandro, W. M. Grundy, N. Pinilla-Alonso, and P. Leisy. "Visible spectroscopy of 2003 UB313 : evidence for N2 ice on the surface of the largest TNO", A&A 458 L5-L8 (2006) (2) E. L. Schaller and Brown "Detection of methane on Kuiper belt object (50000) Quaoar" ApJ 670, L49-L51 (2007) . (3) Öberg, K.I. et al., "The c2d Spitzer Spectroscopic Survey of ices around low-mass stellar objects. III. CH4." ApJ, 678, 1032-1041, 2008. (4) Voss, L.F. et al., "Methane thermodynamics in nanoporous ice: A new methane reservoir on Titan." J. Geophys. Res., 112, E05002 (2007) doi: 10.1029/2006JE002768.

  12. Synthesis and crystal and molecular structure of a tetranuclear cluster based on the rhenium(III)-bisorganohydrazino core: [Re(HNNC(4)H(3)N(2))(NNC(4)H(3)N(2))(OCH(3))(2)](4).

    PubMed

    Femia, Frank J; Chen, Xiaoyuan; Maresca, Kevin P; Babich, John W; Zubieta, Jon

    2000-09-01

    Reaction of NH(4)ReO(4) with excess 2-hydrazinopyrimidine in methanol yields [Re(eta(1)-NNC(4)H(3)N(2)H)(eta(2)-HNNC(4)H(3)N(2))Cl(3)] (1). Attempts to recrystallize 1 by slow diffusion of methanol into DMF after 8 months produced black crystals of [Re(HNNC(4)H(3)N(2))(NNC(4)H(3)N(2))(OCH(3))(2)](4) (2). The structure of 2 consists of isolated tetranuclear clusters, constructed from {Re(eta(2)-HNNC(4)H(3)N(2))(eta(1)-NNC(4)H(3)N(2))(OCH(3))(2)} units linked through the beta-nitrogen of the chelating organodiazene ligand of adjacent units into a box-like aggregate. PMID:20613968

  13. Solubility and diffusion of chromium in 4H-SiC

    NASA Astrophysics Data System (ADS)

    Danno, Katsunori; Saito, Makoto; Seki, Akinori; Sato, Kazuaki; Bessho, Takeshi; Kimoto, Tsunenobu

    2016-06-01

    The solubility and diffusivity of Cr atoms in 4H-SiC epilayers are investigated. The formation energy of 4H-SiC containing Cr has been calculated by first-principles calculation. Si sites have been found to be more stable than C sites or interstitial sites for Cr atoms owing to the lower formation energy. The solubility estimated from the formation energy coincides with the saturated Cr concentration in SiC crystals grown by solution growth. The diffusivity of implanted Cr atoms (located at interstitial sites) was not affected by the charge states of Cr atoms and/or vacancies such as carbon vacancies and silicon vacancies, implying the interstitial diffusion of Cr atoms.

  14. Donor-acceptor-pair emission in fluorescent 4H-SiC grown by PVT method

    SciTech Connect

    Liu, Xi Zhuo, Shi-Yi; Gao, Pan; Huang, Wei; Yan, Cheng-Feng; Shi, Er-Wei

    2015-04-15

    Fluorescent SiC, which contains donor and acceptor impurities with optimum concentrations, can work as a phosphor for visible light emission by donor-acceptor-pair (DAP) recombination. In this work, 3 inch N-B-Al co-doped fluorescent 4H-SiC crystals are prepared by PVT method. The p-type fluorescent 4H-SiC with low aluminum doping concentration can show intensive yellow-green fluorescence at room temperature. N-B DAP peak wavelength shifts from 578nm to 525nm and weak N-Al DAP emission occurred 403/420 nm quenches, when the temperature increases from 4K to 298K. The aluminum doping induces higher defect concentration in the fluorescent crystal and decreases optical transmissivity of the crystal in the visible light range. It triggers more non-radiative recombination and light absorption losses in the crystal.

  15. A novel 4H-SiC MESFET with clival gate

    NASA Astrophysics Data System (ADS)

    Jia, Hujun; Xing, Ding; Zhang, Hang; Pei, Xiaoyan; Sun, Zhelin; Yuan, Yingchun

    2015-07-01

    In this paper, a novel 4H-SiC metal semiconductor field effect transistor (MESFET) with a clival gate structure (CG-MESFET) is proposed. The drain current (ID) and the breakdown voltage (VB) are simulated and compared to the traditional double-recessed gate 4H-SiC MESFET (DR-MESFET). The results indicate that the drain current (ID) of the CG-MESFET transforms with the change of end point of clival gate (EPCG), and it reaches to a maximum value about 545 mA when EPCG is at 1/2 of whole gate, thus, the drain current (ID) has a much greater increase than that of the DR-MESFET. The CG-MESFET has the advantages of high breakdown voltage (VB) that is increased by 15% and superior DC performances over the DR-MESFET.

  16. Structure determination of an amorphous compound AlB4H11.

    SciTech Connect

    Chen, Xuenian; Zhang, Yongsheng; Wang, Yongli; Zhou, Wei; Knight, Douglas A; Yisgedu, Teshome; Huang, Zhenguo; Lingam, Hima; Billet, Beau; Udovic, Terrence J; Brown, Gilbert M; Shore, Sheldon; Wolverton, Christopher; Zhao, J.-C.

    2012-01-01

    The structure of the amorphous aluminoborane compound AlB4H11 was identified through a collaborative study closely coupling a first-principles density functional based approach with experimental measurements using IR, NMR, and neutron vibrational spectroscopy (NVS). The AlB4H11 structure was found to contain distinct [BH4] and [B3H7] units without any [AlH4] units. It forms a [B3H7] Al(BH4) polymer chain with the [BH4] units twisted relative to each other perpendicular to the chain direction and bonded to Al, and a chain backbone consists of [B3H7] and Al where the [B3H7] unit exhibits a triangular boron configuration. The computed lowest energy structure shows good agreement with results of IR, NVS and NMR spectra; this agreement demonstrates the extended applicability of the structure prediction approach to the prediction of even amorphous compounds.

  17. Donor-acceptor-pair emission in fluorescent 4H-SiC grown by PVT method

    NASA Astrophysics Data System (ADS)

    Liu, Xi; Zhuo, Shi-Yi; Gao, Pan; Huang, Wei; Yan, Cheng-Feng; Shi, Er-Wei

    2015-04-01

    Fluorescent SiC, which contains donor and acceptor impurities with optimum concentrations, can work as a phosphor for visible light emission by donor-acceptor-pair (DAP) recombination. In this work, 3 inch N-B-Al co-doped fluorescent 4H-SiC crystals are prepared by PVT method. The p-type fluorescent 4H-SiC with low aluminum doping concentration can show intensive yellow-green fluorescence at room temperature. N-B DAP peak wavelength shifts from 578nm to 525nm and weak N-Al DAP emission occurred 403/420 nm quenches, when the temperature increases from 4K to 298K. The aluminum doping induces higher defect concentration in the fluorescent crystal and decreases optical transmissivity of the crystal in the visible light range. It triggers more non-radiative recombination and light absorption losses in the crystal.

  18. Monte Carlo Simulation of Electron Transport in 4H- and 6H-SiC

    SciTech Connect

    Sun, C. C.; You, A. H.; Wong, E. K.

    2010-07-07

    The Monte Carlo (MC) simulation of electron transport properties at high electric field region in 4H- and 6H-SiC are presented. This MC model includes two non-parabolic conduction bands. Based on the material parameters, the electron scattering rates included polar optical phonon scattering, optical phonon scattering and acoustic phonon scattering are evaluated. The electron drift velocity, energy and free flight time are simulated as a function of applied electric field at an impurity concentration of 1x10{sup 18} cm{sup 3} in room temperature. The simulated drift velocity with electric field dependencies is in a good agreement with experimental results found in literature. The saturation velocities for both polytypes are close, but the scattering rates are much more pronounced for 6H-SiC. Our simulation model clearly shows complete electron transport properties in 4H- and 6H-SiC.

  19. The C4H radical and the diffuse interstellar bands. An ab initio study

    NASA Technical Reports Server (NTRS)

    Kolbuszewski, Marcin

    1994-01-01

    An ab initio study of the low-lying electronic states of C4H has been presented where the species studied has a chi(2)sigma(+) ground state and two low lying pi states. Based on the vertical and adiabatic excitation energies between those states it is suggested that the 4428 A diffuse interstellar band is not carried by C4H. The application of the particle in a box model shows strong coincidences between the strong DIB's and predicted wavelengths of pi-pi transitions in C(2n)H series. Based on those coincidences, it is suggested the C(2n)H species as good candidates for carriers of diffuse interstellar bands.

  20. Strain energy analysis of screw dislocations in 4H-SiC by molecular dynamics

    NASA Astrophysics Data System (ADS)

    Kawamura, Takahiro; Mizutani, Mitsutoshi; Suzuki, Yasuyuki; Kangawa, Yoshihiro; Kakimoto, Koichi

    2016-03-01

    We simulated screw dislocations with the Burgers vector parallel to the [0001] direction in 4H-SiC by a classical molecular dynamics method. A stable structure of an extended dislocation generated by the dissociation of a screw dislocation was identified by calculating the strain energy caused by dislocation cores and stacking faults. As a result, we conclude that the most expected structure of the extended dislocation is made of partial dislocations with the Burgers vector b = 1/2c + 1/2c (c is equal to the thickness of one period in the c-axis direction of 4H-SiC) and the stacking fault that is parallel to the a-plane, and that the distance between the dislocation cores is less than about 44 Å.

  1. Free carrier absorption and lifetime mapping in 4H SiC epilayers

    SciTech Connect

    Galeckas, A.; Grivickas, V.; Linnros, J.; Bleichner, H.

    1997-04-01

    Results of carrier lifetime studies in low-doped epitaxial 4H SiC layers are reported. The free carrier absorption (FCA) technique was applied to extract carrier lifetime parameters and their spatial distribution in a wide photoexcitation range. The FCA magnitude is shown to scale linearly with the photoinjected carrier concentration, while the absorption cross section increases according to a {lambda}{sup 4.4} law for near infrared wavelengths. High spatial resolution carrier lifetime mapping of large 4H SiC areas revealed features related to structural imperfections of epilayers. Finally, a density dependent fast lifetime component was observed at high injection levels and attributed to band-to-band Auger recombination. {copyright} {ital 1997 American Institute of Physics.}

  2. Detection of minority carrier traps in p-type 4H-SiC

    SciTech Connect

    Alfieri, G.; Kimoto, T.

    2014-03-03

    Contrarily to the case of n-type 4H-SiC, very little is known about the presence of minority carrier traps in p-type epilayers. In this study, we performed the electrical characterization of as-grown, electron irradiated, and thermally oxidized p-type 4H-SiC, by using minority carrier transient spectroscopy. Four minority carrier traps are reported in 1.6–2.3 eV energy range above the valence band edge (E{sub V}). Particular emphasis is given to the mid-gap minority carrier trap (EH{sub 6∕7}) and to its correlation to an energetically close mid-gap majority carrier trap (HK4)

  3. Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode

    NASA Astrophysics Data System (ADS)

    Fengping, Chen; Yuming, Zhang; Hongliang, Lü; Yimen, Zhang; Hui, Guo; Xin, Guo

    2011-06-01

    4H-SiC junction barrier Schottky (JBS) diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently, and the other is processed by depositing a Schottky metal multi-layer on the whole anode. The reverse performances are compared to find the influences of these factors. The results show that JBS diodes with field guard rings have a lower reverse current density and a higher breakdown voltage, and with independent P-type ohmic contact manufacturing, the reverse performance of 4H-SiC JBS diodes can be improved effectively. Furthermore, the P-type ohmic contact is studied in this work.

  4. Hall scattering factors in p-type 4H-SiC with various doping concentrations

    NASA Astrophysics Data System (ADS)

    Asada, Satoshi; Okuda, Takafumi; Kimoto, Tsunenobu; Suda, Jun

    2016-04-01

    The Hall scattering factor (γH) in p-type 4H-SiC with various aluminum doping concentrations of 5.8 × 1014-7.1 × 1018 cm-3 was investigated from 300 to 900 K. γH was determined by comparing the Hall coefficient with the theoretical carrier concentration derived from acceptor and donor concentrations obtained from secondary ion mass spectrometry and capacitance-voltage measurements. γH decreased with increasing temperature or doping concentration; γH = 1-0.4 for the doping concentration of 5.8 × 1014 cm-3 and γH = 0.5-0.2 for the doping concentration of 7.1 × 1018 cm-3. The dependence might be caused by the anisotropic and nonparabolic valence band structure of 4H-SiC.

  5. Crystal structure induced residue formation on 4H-SiC by reactive ion etching

    NASA Astrophysics Data System (ADS)

    Liu, Yi-hong; Sun, Yu-jun; Zhao, Gao-jie; Liao, Li-ming; Wang, Tao; Chen, Zhi-zhan

    2016-06-01

    The (000 1 ¯) C face of 4H-SiC wafer was etched by reactive ion etching in SF6/O2 plasma. The effect of etching parameters, such as work pressure, SF6:O2 ratio and etching time, on the residue formation were systematically investigated. The residue morphologies were observed by scanning electron microscopy and atomic force microscopy, respectively. The residues have spike shape and their facets are defined as { 1 1 ¯ 0 2 ¯ } crystal planes. They are formed at beginning of the etching and no new spikes are generated as prolonging etching time. Both work pressure and SF6:O2 ratio play significant role in the spike formation. The residues can be eliminated completely by increasing the SF6:O2 ratio and work pressure. On the basis of experimental results and of 4H-SiC crystal structure, the spike formation model is proposed.

  6. Nitrogen passivation of deposited oxides on n 4H-SiC

    NASA Astrophysics Data System (ADS)

    Chung, G. Y.; Williams, J. R.; Isaacs-Smith, T.; Ren, F.; McDonald, K.; Feldman, L. C.

    2002-11-01

    Results for measurements of interface state density and breakdown field strength are reported for deposited oxides on n 4H-SiC following passivation with nitric oxide. Low-temperature oxides deposited by plasma-enhanced chemical vapor deposition and high-temperature oxides deposited at 950 °C were investigated. Nitrogen passivation of deposited oxides on n 4H-SiC is found to produce interface state densities of 1-2×1012cm-2 eV-1 at Ec-E=0.1 eV, regardless of variations in oxide deposition procedures that affect the residual interfacial carbon concentration. Breakdown field strengths were higher for passivated high-temperature oxides compared to passivated low-temperature oxides at room temperature and 290 °C. We suggest that additional oxide growth during the NO passivation is the reason for the observed interface state densities.

  7. A 4H Silicon Carbide Gate Buffer for Integrated Power Systems

    SciTech Connect

    Ericson, N; Frank, S; Britton, C; Marlino, L; Ryu, SH; Grider, D; Mantooth, A; Francis, M; Lamichhane, R; Mudholkar, M; Shepherd, P; Glover, M; Valle-Mayorga, J; McNutt, T; Barkley, A; Whitaker, B; Cole, Z; Passmore, B; Lostetter, A

    2014-02-01

    A gate buffer fabricated in a 2-mu m 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output stage, and is fabricated using enhancement mode N-channel FETs in a process optimized for SiC power switching devices. Simulation and measurement results of the fabricated gate buffer are presented and compared for operation at various voltage supply levels, with a capacitive load of 2 nF. Details of the design including layout specifics, simulation results, and directions for future improvement of this buffer are presented. In addition, plans for its incorporation into an isolated high-side/low-side gate-driver architecture, fully integrated with power switching devices in a SiC process, are briefly discussed. This letter represents the first reported MOSFET-based gate buffer fabricated in 4H SiC.

  8. Electric-field dependence of electron drift velocity in 4H-SiC

    NASA Astrophysics Data System (ADS)

    Ivanov, P. A.; Potapov, A. S.; Samsonova, T. P.; Grekhov, I. V.

    2016-09-01

    Room temperature isothermal forward current-voltage characteristics of mesa-epitaxial 4H-SiC Schottky diodes were measured at high electric fields (beyond 105 V/cm) in the 34-μm thick n-base doped at 1 × 1015 cm-3. The effect of diode self-heating on current was minimized when using single 4-ns pulses. The analytical formula was derived for the dependence of electron drift velocity on electric field along c-axis.

  9. Defect formation in 4H-SiC single crystal grown on the prismatic seeds

    NASA Astrophysics Data System (ADS)

    Fadeev, A. Yu; Lebedev, A. O.; Tairov, Yu M.

    2014-12-01

    The defect structure of 4H silicon carbide single crystals grown by PVT method on three prismatic seeds (10-10), (11-20) and (8.3.-11.0) is considered. The only defects existing in the grown ingots are stacking faults and basal plane dislocations. The type of stacking fault is studied. The dependence of stacking fault morphology on the seed orientation is analyzed.

  10. High Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers

    SciTech Connect

    Kamata, I.; Nagano, M; Tsuchida, H; Chen, Y; Dudley, M

    2009-01-01

    Threading edge dislocations (TEDs) in a 4H-SiC epitaxial layer are investigated using high-resolution synchrotron topography. Six types of TED image are confirmed to correspond to the Burgers vector directions by a comparison of computer simulated images and observed topography images in crystal boundaries. Using a mapping method, a wide spatial distribution of the six types of TED is examined in a quarter section of a 2-inch wafer.

  11. Polarographic study of cadmium 5-hydroxy 2-(hydroxymethyl) 4H-pyran-4-one complex

    NASA Technical Reports Server (NTRS)

    Wilson, Ray F.; Daniels, Robert C.

    1989-01-01

    A polarographic study was performed on the products formed in the interaction of cadmium (II) with a 5-hydroxy 2-(hydroxymethyl) 4H-Pyran-4-one, using varying conditions of pH, supporting electrolytes, and concentrations. Measurements using the differential pulse method show that cadmium (II) exhibits a molar combining ratio of complexing agents to cation ranging from 1 to 1 to 3 to 1 depending on the pH and the supporting electrolyte employed.

  12. Resistance of 4H-SiC Schottky barriers at high forward-current densities

    SciTech Connect

    Ivanov, P. A. Samsonova, T. P.; Il’inskaya, N. D.; Serebrennikova, O. Yu.; Kon’kov, O. I.; Potapov, A. S.

    2015-07-15

    The resistance of Schottky barriers based on 4H-SiC is experimentally determined at high forward-current densities. The measured resistance is found to be significantly higher than the resistance predicted by classical mechanisms of electron transport in Schottky contacts. An assumption concerning the crucial contribution of the tunnel-transparent intermediate oxide layer between the metal and semiconductor to the barrier resistance is proposed and partially justified.

  13. Bis(4H-1,2,4-triazol-3-yl)disulfane

    PubMed Central

    Liu, Dongsheng; Xu, Yaping; Li, Xinfa; Ying, Shaoming; Chen, Wentong

    2008-01-01

    The title compound, C4H4N6S2, was synthesized by the reaction of 3-mercapto-1H-1,2,4-triazole with sodium hydrox­ide in ethanol. The mol­ecule possesses a crystallographically imposed twofold axis. Inter­molecular N—H⋯N hydrogen bonds link the mol­ecules into chains along the c axis. PMID:21200812

  14. Theoretical microwave spectral constants for C3H/+/ and C4H/+/

    NASA Technical Reports Server (NTRS)

    Wilson, S.; Green, S.

    1980-01-01

    A number of linear conjugated carbon chain molecules have been observed in the interstellar gas. It has been suggested that ion molecule chemistry schemes may explain the formation of these compounds. In the present paper, theoretical bond lengths and rotation constants are obtained for C3H(+) and C4H(+). Calculations for C3 are used to assess the accuracy of the former. Recent results for C2H(+) are examined.

  15. Laboratory detection of the C3N an C4H free radicals

    NASA Technical Reports Server (NTRS)

    Gottlieb, C. A.; Gottlieb, E. W.; Thaddeus, P.; Kawamura, H.

    1983-01-01

    The millimeter-wave spectra of the linear carbon chain free radicals C3N and C4H, first identified in IRC + 10216 and hitherto observed only in a few astronomical sources, have been detected with a Zeeman-modulated spectrometer in laboratory glow discharges through low pressure flowing mixtures of N2 + HC3N and He + HCCH, respectively. Four successive rotational transitions between 168 and 198 GHz have been measured for C3N, and five rotational transitions between 143 and 200 GHz for C4H; each is a well-resolved spin doublet owing to the unpaired electron present in both species. Precise values for the rotational, centrifugal distortion, and spin doubling constants have been obtained, which, with hyperfine constants derived from observations of the lower rotational transitions in the astronomical source TMC 1, allow all the rotational transitions of C3N and C4H at frequencies less than 300 GHz to be calculated to an absolute accuracy exceeding 1 ppm.

  16. Extended charge accumulation in ruthenium-4H-imidazole-based black absorbers: a theoretical design concept.

    PubMed

    Kupfer, Stephan

    2016-05-11

    A theoretical-guided design concept aiming to achieve highly efficient unidirectional charge transfer and multi-charge separation upon successive photoexcitation for light-harvesting dyes in the scope of supramolecular photocatalysts is presented. Four 4H-imidazole-ruthenium(ii) complexes incorporating a biimidazole-based electron-donating ligand sphere have been designed based on the well-known 4H-imidazole-ruthenium(ii) polypyridyl dyes. The quantum chemical evaluation, performed at the density functional and time-dependent density functional level of theory, revealed extraordinary unidirectional charge transfer bands from the near-infrared to the ultraviolet region of the absorption spectrum upon multi-photoexcitation. Spectro-electrochemical simulations modeling photoexcited intermediates determined the outstanding multi-electron storage capacity for this novel class of black dyes. These remarkable photochemical and photophysical properties are found to be preserved upon site-specific protonation rendering 4H-imidazole-ruthenium(ii) biimidazole dyes ideal for light-harvesting applications in the field of solar energy conversion. PMID:27121270

  17. Identification of the Amorphous AlB4H11 Structure

    NASA Astrophysics Data System (ADS)

    Wang, Yongli; Zhang, Yongsheng; Chen, Xuenian; Zhao, Ji-Cheng; Zhou, Wei; Udovic, Terrence; Wolverton, C.

    2012-02-01

    In recent experimental work, AlB4H11 has been identified as a potential hydrogen storage material with a good desorption temperature and partial reversibility. It is an amorphous, white solid at room temperature and its molecular structure is presently unknown. We combine experimental measurements (NMR, neutron vibrational spectra and IR) and a theoretical structure prediction method to identify the (local) structure of the amorphous AlB4H11 phase. The theoretical structure prediction method is a combination of the Monte-Carlo based prototype electrostatic ground state search (PEGS) method and first-principles calculation (DFT). The PEGS+DFT method has successfully predicted many crystalline solid structures, but has never been applied to the prediction of amorphous solid structures. The PEGS predictions of the AlB4H11 structure are quite successful: we find the calculated phonon density of states (pDOS) of our PEGS+DFT predicted structures is in close agreement with the experimental vibrational measurements. More broadly, our findings indicate that first-principles theoretical design of new amorphous materials for energy storage is now possible, paving a promising way for similar studies in the future.

  18. A remarkable activity of human leukotriene A4 hydrolase (LTA4H) toward unnatural amino acids.

    PubMed

    Byzia, Anna; Haeggström, Jesper Z; Salvesen, Guy S; Drag, Marcin

    2014-05-01

    Leukotriene A4 hydrolase (LTA4H--EC 3.3.2.6) is a bifunctional zinc metalloenzyme, which processes LTA4 through an epoxide hydrolase activity and is also able to trim one amino acid at a time from N-terminal peptidic substrates via its aminopeptidase activity. In this report, we have utilized a library of 130 individual proteinogenic and unnatural amino acid fluorogenic substrates to determine the aminopeptidase specificity of this enzyme. We have found that the best proteinogenic amino acid recognized by LTA4H is arginine. However, we have also observed several unnatural amino acids, which were significantly better in terms of cleavage rate (k cat/K m values). Among them, the benzyl ester of aspartic acid exhibited a k cat/K m value that was more than two orders of magnitude higher (1.75 × 10(5) M(-1) s(-1)) as compared to L-Arg (1.5 × 10(3) M(-1) s(-1)). This information can be used for design of potent inhibitors of this enzyme, but may also suggest yet undiscovered functions or specificities of LTA4H. PMID:24573245

  19. Ab initio study of the O4H(+) novel species: spectroscopic fingerprints to aid its observation.

    PubMed

    Xavier, F George D; Hernández-Lamoneda, Rámon

    2015-06-28

    A detailed ab initio characterization of the structural, energetic and spectroscopic properties of the novel O4H(+) species is presented. The equilibrium structures and relative energies of all multiplet states have been determined systematically by analyzing static and dynamical correlation effects. The two and three body dissociation processes have been studied and indicate the presence of conical intersections in various states including the ground state. Comparison with available thermochemical data is very good, supporting the applied methodology. The reaction, H3(+) + O4→ O4H(+) + H2, was found to be exothermic ΔH = -19.4 kcal mol(-1) and therefore, it is proposed that the product in the singlet state could be formed in the interstellar medium (ISM) via collision processes. To aid in its laboratory or radioastronomy detection in the interstellar medium we determined spectroscopic fingerprints. It is estimated for the most stable geometry of O4H(+) dipole allowed electronic transitions in the visible region at 429 nm and 666 nm, an intense band at 1745 cm(-1) in the infrared and signals at 40.6, 81.2 and 139.2 GHz in the microwave region at 10, 50 and 150 K respectively, relevant for detection in the ISM. PMID:26028209

  20. Characterization of a n+3C/n-4H SiC heterojunction diode

    NASA Astrophysics Data System (ADS)

    Minamisawa, R. A.; Mihaila, A.; Farkas, I.; Teodorescu, V. S.; Afanas'ev, V. V.; Hsu, C.-W.; Janzén, E.; Rahimo, M.

    2016-04-01

    We report on the fabrication of n + 3C/n-4H SiC heterojunction diodes (HJDs) potentially promising the ultimate thermal stability of the junction. The diodes were systematically analyzed by TEM, X-ray diffraction, AFM, and secondary ion mass spectroscopy, indicating the formation of epitaxial 3C-SiC crystal on top of 4H-SiC substrate with continuous interface, low surface roughness, and up to ˜7 × 1017 cm-3 dopant impurity concentration. The conduction band off-set is about 1 V as extracted from CV measurements, while the valence bands of both SiC polytypes are aligned. The HJDs feature opening voltage of 1.65 V, consistent with the barrier height of about 1.5 eV extracted from CV measurement. We finally compare the electrical results of the n + 3C/n-4H SiC heterojunction diodes with those featuring Si and Ge doped anodes in order to evaluate current challenges involved in the fabrication of such devices.

  1. Demonstration of the First 4H-SiC EUV Detector with Large Detection Area

    NASA Technical Reports Server (NTRS)

    Xin, Xiaobin; Yan, Feng; Koeth, Timothy W.; Hu, Jun; Zhao, Jian H.

    2005-01-01

    Ultraviolet (UV) and Extreme Ultraviolet (EUV) detectors are very attractive in astronomy, photolithography and biochemical applications. For EUV applications, most of the semiconductor detectors based on PN or PIN structures suffer from the very short penetration depth. Most of the carries are absorbed at the surface and recombined there due to the high surface recombination before reach the depletion region, resulting very low quantum efficiency. On the other hand, for Schottky structures, the active region starts from the surface and carriers generated from the surface can be efficiently collected. 4H-Sic has a bandgap of 3.26eV and is immune to visible light background noise. Also, 4H-Sic detectors usually have very good radiation hardness and very low noise, which is very important for space applications where the signal is very weak. The E W photodiodes presented in this paper are based on Schottky structures. Platinum (Pt) and Nickel (Ni) are selected as the Schottky contact metals, which have the highest electron work functions (5.65eV and 5.15eV, respectively) among all the known metals on 4H-Sic.

  2. Interfacial atomic site characterization by photoelectron diffraction for 4H-AlN/4H-SiC(11\\bar{2}0) heterojunction

    NASA Astrophysics Data System (ADS)

    Maejima, Naoyuki; Horita, Masahiro; Matsui, Hirosuke; Matsushita, Tomohiro; Daimon, Hiroshi; Matsui, Fumihiko

    2016-08-01

    The interfacial atomic structure of an AlN thin film on a nonpolar 4H-SiC(11\\bar{2}0) substrate grown by atomic Al and N plasma deposition was studied by photoelectron diffraction and spectroscopy. The epitaxial growth of the thin film was confirmed by the comparison of element-specific photoelectron intensity angular distributions (PIADs). Depth profiles were analyzed by angle-resolved constant-final-state-mode X-ray photoelectron spectroscopy (AR-XPS). No polar angular dependence was observed in Al 2p spectra, while an additional intermixing component was found in interface-sensitive N 1s spectra. The site-specific N 1s PIADs for the AlN film and an intermixing component were derived from two N 1s PIADs with different binding energies. We attributed the intermixing component to SiN interfacial layer sites. In order to prevent SiN growth at the interface, we deposited Al on the SiC(11\\bar{2}0) substrate prior to the AlN growth. A significant reduction in the amount of intermixing components at the AlN/SiC interface was confirmed by AR-XPS.

  3. Measurements of depth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC using coherent acoustic phonons

    NASA Astrophysics Data System (ADS)

    Baydin, Andrey; Krzyzanowska, Halina; Dhanunjaya, M.; Rao, S. V. S. Nageswara; Davidson, Jimmy L.; Feldman, Leonard C.; Tolk, Norman H.

    Silicon carbide (SiC) is an ideal material for new electronics, such as high power/high temperature devices, and a candidate for advanced optical applications such as room temperature spintronics and quantum computing. Both types of applications may require the control of defects created by ion bombardment. In this work, we examine depth dependent modification of optical constants of 4H-SiC due to hydrogen implantation at 180keV and low doses ranging from 1014 to 1016 cm-2probed by coherent acoustic phonon (CAP) spectroscopy. For our studies, we used Si-face 10 μm epilayers of n-type 4H-SiC grown by CVD on 4H-SiC substrate. A comprehensive analysis of the reference and implanted spectra shows a strong dependence of 4H-SiC complex refractive index shape versus depth on the H+ fluence. We extract the complex refractive index as a function of depth and ion beam dose. Our results demonstrate that the implantation-modified refractive index is distributed over a greater depth range than Monte Carlo calculation predictions of the implantation induced structural damage. These studies provide insight into the application of hydrogen ion implantation to the fabrication of SiC-based photonic and optoelectronic devices. Work is supported by ARO under Contract No. W911NF-14-1-0290.

  4. Smooth, low-bias plasma etching of InP in microwave Cl2/CH4/H2 mixtures

    NASA Astrophysics Data System (ADS)

    Constantine, C.; Barratt, C.; Pearton, S. J.; Ren, F.; Lothian, J. R.

    1992-12-01

    Electron cyclotron resonance microwave (2.45 GHz) discharges of Cl2/CH4/H2 with low additional dc biases (-80 to -150 V) on the sample are shown to provide smooth, anisotropic dry etching of InP at ˜150 °C. Rates of 2500 Å min-1 are obtained at a pressure of 0.5 mTorr and ˜80 V dc bias. SiO2 masks show no discernible erosion under these conditions, yielding a process that is extremely well suited for laser mesa fabrication. The CH4 addition promotes the anisotropy of the etching by a sidewall polymer mechanism, while the H2 addition significantly enhances the etch rate at low pressure.

  5. Hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC

    SciTech Connect

    Cai, Tuocheng; Jia, Zhenzhao; Yan, Baoming; Yu, Dapeng; Wu, Xiaosong

    2015-01-05

    We demonstrate hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC. Compared with the conventional thermal decomposition technique, the size of the growth domain by this method is substantially increased and the thickness variation is reduced. Based on the morphology of epitaxial graphene, the role of hydrogen is revealed. It is found that hydrogen acts as a carbon etchant. It suppresses the defect formation and nucleation of graphene. It also improves the kinetics of carbon atoms via hydrocarbon species. These effects lead to increase of the domain size and the structure quality. The consequent capping effect results in smooth surface morphology and suppression of multilayer growth. Our method provides a viable route to fine tune the growth kinetics of epitaxial graphene on SiC.

  6. After-school programs for health promotion in rural communities: Ashe County Middle School 4-H After-School Program.

    PubMed

    Edwards, Michael B; Miller, Jennifer L; Blackburn, Linda

    2011-01-01

    Rural youth have a higher risk for lower health and developmental outcomes, often facing numerous constraints (eg, poor socioeconomic conditions, lower levels of social support, fewer recreational programs and facilities, and inadequate transportation). After-school programs have the potential to effectively deliver health-promoting activities but often face significant challenges in these areas. Ashe County is a rural community in the Appalachian region of North Carolina. Ashe County is economically depressed and its youth population has many poor health and developmental indicators. However, with more than 20 years of sustained activity, one important community resource trying to address disparities in youth health and development is the Ashe County 4-H After-School Program. To successfully overcome inherent challenges, the program has positioned itself as essential to community development, supported and retained qualified personnel, and cultivated a network of key partners to continue its efforts to provide essential youth programs for this rural community. PMID:21464690

  7. Ultra-High Voltage 4H-SiC Bi-Directional Insulated Gate Bipolar Transistors

    NASA Astrophysics Data System (ADS)

    Chowdhury, Sauvik

    4H- Silicon Carbide (4H-SiC) is an attractive material for power semiconductor devices due to its large bandgap, high critical electric field and high thermal conductivity compared to Silicon (Si). For ultra-high voltage applications (BV > 10 kV), 4H-SiC Insulated Gate Bipolar Transistors (IGBTs) are favored over unipolar transistors due to lower conduction losses. With improvements in SiC materials and processing technology, promising results have been demonstrated in the area of conventional unidirectional 4H-SiC IGBTs, with breakdown voltage ratings up to 27 kV. This research presents the experimental demonstration of the world's first high voltage bi-directional power transistors in 4H-SiC. Traditionally, four (two IGBTs and two diodes) or two (two reverse blocking IGBTs) semiconductor devices are necessary to yield a bidirectional switch. With a monolithically integrated bidirectional switch as presented here, the number of semiconductor devices is reduced to only one, which results in increased reliability and reduced cost of the overall system. Additionally, by using the unique dual gate operation of BD-IGBTs, switching losses can be reduced to a small fraction of that in conventional IGBTs, resulting in increased efficiency. First, the performance limits of SiC IGBTs are calculated by using analytical methods. The performance benefits of SiC IGBTs over SiC unipolar devices and Si IGBTs are quantified. Numerical simulations are used to optimize the unit cell and edge termination structures for a 15 kV SiC BD-IGBT. The effect of different device parameters on BD-IGBT static and switching performance are quantified. Second, the process technology necessary for the fabrication of high voltage SiC BD-IGBTs is optimized. The effect of different process steps on parameters such as breakdown voltage, carrier lifetime, gate oxide reliability, SiO2-SiC interface charge density is quantified. A carrier lifetime enhancement process has been optimized for lightly doped

  8. Study of barrier inhomogeneities using I-V-T characteristics of Mo/4H-SiC Schottky diode

    NASA Astrophysics Data System (ADS)

    Ouennoughi, Z.; Toumi, S.; Weiss, R.

    2015-01-01

    In the present work we investigate the forward current-voltage (I-V) characteristics, over a wide temperature range 298-498 K, of Mo/4H-SiC Schottky diode for which aluminum ion implantation was used to create the high resistivity layer forming the guard ring. The (I-V) analysis based on Thermionic Emission (TE) theory shows a decrease of the barrier height ϕB and an increase of the ideality factor n when the temperature decreases. These anomalies are mainly due to the barrier height inhomogeneities at the metal/semiconductor interface as we get a Gaussian distribution of the barrier heights when we plot the apparent barrier height ϕap versus q/2kT. The mean barrier height and the standard deviation obtained values are ϕbarB0=1.160 eV and σ0=88.049 mV, respectively. However, by means of the modified Richardson plot Ln (Is /T2) - (q2 σ 0 2 / 2k2T2) versus q/kT, the mean barrier height and the Richardson constant values obtained are ϕbarB0=1.139 eV and A*=129.425 A/cm2 K2, respectively. The latter value of ϕbarB0 matches very well with the mean barrier height obtained from the plot of ϕap versus q/2kT. The Richardson constant is much closer to the theoretical value of 146 A/cm2 K2. The series resistance Rs is also estimated from the forward current-voltage characteristics of Mo/4H-SiC Schottky contact. This parameter shows strong temperature dependence. The T0 effect is validated for the 298-498 K temperature range for the used Schottky diode and provides a clear evidence for the barrier inhomogeneity at the Mo/4H-SiC interface. Finally, we note the impact of the implantation process as well as the choice of the used ion on the characterized parameters of the Schottky contact.

  9. Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

    SciTech Connect

    Yan, F.; Devaty, R. P.; Choyke, W. J.; Gali, A.; Kimoto, T.; Ohshima, T.; Pensl, G.

    2012-03-26

    Dicarbon antisite defects were created by either electron irradiation or ion implantation into 4H-SiC. The no-phonon lines from the dicarbon antisite defect center were observed with their phonon replicas. The stretch frequencies of the defect were observed up to the fifth harmonic. The Morse potential model accounts for the anharmonicity quite well and gives a very good prediction of the vibration energies up to the fifth harmonic with an error of less than 1%. First principles calculations show that the model of a dicarbon antisite defect along with its four nearest neighboring carbon atoms can explain the observed anharmonicity.

  10. Light triggered 4H-SiC thyristors with an etched guard ring assisted JTE

    NASA Astrophysics Data System (ADS)

    Dheilly, Nicolas; Planson, Dominique; Pâques, Gontran; Scharnholz, Sigo

    2012-07-01

    In this paper, an original termination, the etched guard ring assisted junction termination extension (JTE), is demonstrated on 4H-SiC light triggered thyristors. The termination structure, designed with finite element simulations, is detailed and particular attention is paid to the sensitivity to etching depth uncertainties. The fabrication processes and the electrical characterization of the devices are described. A blocking voltage of 6.3 kV is attained, validating the principle of the termination. Switching and quasi static on-state measurements are also performed to investigate the functionality of the thyristors.

  11. Atomic oxidation of large area epitaxial graphene on 4H-SiC(0001)

    SciTech Connect

    Velez-Fort, E.; Ouerghi, A.; Silly, M. G.; Sirtti, F.; Eddrief, M.; Marangolo, M.; Shukla, A.

    2014-03-03

    Structural and electronic properties of epitaxial graphene on 4H-SiC were studied before and after an atomic oxidation process. X-ray photoemission spectroscopy indicates that oxygen penetrates into the substrate and decouples a part of the interface layer. Raman spectroscopy demonstrates the increase of defects due to the presence of oxygen. Interestingly, we observed on the near edge x-ray absorption fine structure spectra a splitting of the π* peak into two distinct resonances centered at 284.7 and 285.2 eV. This double structure smears out after the oxidation process and permits to probe the interface architecture between graphene and the substrate.

  12. Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Spry, David J.; Trunek, Andrew J.; Evans, Laura J.; Chen, Liang-Yu; Hunter, Gary W.; Androjna, Drago

    2007-01-01

    This paper reports on initial results from the first device tested of a "second generation" Pt-SiC Schottky diode hydrogen gas sensor that: 1) resides on the top of atomically flat 4H-SiC webbed cantilevers, 2) has integrated heater resistor, and 3) is bonded and packaged. With proper selection of heater resistor and sensor diode biases, rapid detection of H2 down to concentrations of 20 ppm was achieved. A stable sensor current gain of 125 +/- 11 standard deviation was demonstrated during 250 hours of cyclic test exposures to 0.5% H2 and N2/air.

  13. Structural defects in electrically degraded 4H-SiC p+/n-/n+ diodes

    NASA Astrophysics Data System (ADS)

    Persson, P. O. A.; Hultman, L.; Jacobson, H.; Bergman, J. P.; Janzen, E.; Molina-Aldareguia, J. M.; Clegg, W. J.; Tuomi, T.

    2002-06-01

    Triangular structural defects are occasionally generated during the long-term operation of 4H-SiC pin diodes and degrade the forward characteristics of the diode. We have used synchrotron white beam x-ray topography, scanning electron microscopy, in situ cathodo luminescence, and transmission electron microscopy to characterize the structure and formation of these defects. It is shown that the defects are stacking faults on the (0001) basal planes, bound by partial dislocations with Burgers vectors 1/3<1010> and 1/3<0110>. These partials are suggested to form by the dissociation of existing dislocations.

  14. Dynamic characteristics of 4H-SiC drift step recovery diodes

    SciTech Connect

    Ivanov, P. A. Kon’kov, O. I.; Samsonova, T. P.; Potapov, A. S.; Grekhov, I. V.

    2015-11-15

    The dynamic characteristics of 4H-SiC p{sup +}–p–n{sub 0}–n{sup +} diodes are experimentally studied in the pulsed modes characteristic of the operation of drift step recovery diodes (DSRD-mode). The effect of the subnanosecond termination of the reverse current maintained by electron-hole plasma preliminarily pumped by a forward current pulse is analyzed in detail. The influence exerted on the DSRD effect by the amplitude of reverse-voltage pulses, the amplitude and duration of forward-current pulses, and the time delay between the forward and reverse pulses is demonstrated and accounted for.

  15. 4H SiC BJTs with current gain of 110

    NASA Astrophysics Data System (ADS)

    Zhang, Qingchun (Jon); Agarwal, Anant; Burk, Al; Geil, Bruce; Scozzie, Charles

    2008-07-01

    4H-SiC BJTs with a common emitter current gain of 110 have been demonstrated. The high current gain was attributed to a thin base of 0.25 μm which reduces the carrier recombination in the base region. The device open base breakdown voltage (BVCEO) of 270 V was much less than the open emitter breakdown voltage (BVCBO) of 1560 V due to the emitter leakage current multiplication from the high current gain by "transistor action" of BJTs. The device has shown minimal gain degradation after electrical stress at high current density of >200 A/cm2up to 25 h.

  16. High quality interlayer dielectric for 4H SiC DMOSFETs

    NASA Astrophysics Data System (ADS)

    Okayama, T.; Arthur, S. D.; Waldrab, P.; Rao, Mulpuri V.

    2007-11-01

    In this work useful weight percentages of boron and phosphorus in boro-phospho-silicate-glass (BPSG) interlayer dielectric (ILD) films to getter mobile ions effectively in 4H-SiC DMOSFET structures are developed, considering the limitations, such as the required low glass flow temperature, and the possible hygroscopic nature of the films and formation of crystalline BPO4 particles, which may occur for high B and P weight percentages. The B and P weight percentage viscous flow temperature contours and empirical inequalities representing the above-mentioned limitations are developed and discussed. Results of this work are useful for both silicon and compound semiconductor device technologies.

  17. Development of 10 kV 4H-SiC JBS diode with FGR termination

    NASA Astrophysics Data System (ADS)

    Runhua, Huang; Yonghong, Tao; Pengfei, Cao; Ling, Wang; Gang, Chen; Song, Bai; Rui, Li; Yun, Li; Zhifei, Zhao

    2014-07-01

    The design, fabrication, and electrical characteristics of the 4H-SiC JBS diode with a breakdown voltage higher than 10 kV are presented. 60 floating guard rings have been used in the fabrication. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The n-type epilayer is 100 μm in thickness with a doping of 6 × 1014 cm-3. The on-state voltage was 2.7 V at JF = 13 A/cm2.

  18. 4H-SiC junction-barrier Schottky diodes with high forward current densities

    NASA Astrophysics Data System (ADS)

    Tone, Kiyoshi; Zhao, Jian H.; Weiner, Maurice; Pan, Menghan

    2001-07-01

    4H-SiC junction-barrier Schottky (JBS) diodes blocking 1000 V have been fabricated. I-V characteristics have been evaluated at room temperature and 255 °C in comparison with the Schottky barrier (SB) and pin diodes fabricated on the same wafer. While the low reverse leakage confirms the functioning of JBS, the high forward current densities of 630 and 210 A cm-2 at 4.0 V at room temperature and 255 °C, respectively, with only ~20% reduction from those of the SB diodes, clearly demonstrate that the SiC JBS diodes can be fabricated with acceptable sacrifice in the forward current capacities.

  19. 4H-SiC Schottky photodiodes for ultraviolet flame detection

    NASA Astrophysics Data System (ADS)

    Mazzillo, M.; Sciuto, A.

    2015-10-01

    In the last few years silicon carbide (SiC) has emerged as an appropriate material for the detection of very low ultraviolet photon fluxes even at elevated temperatures. In this paper we report on the electro-optical characteristics of large area interdigit Ni2Si/4H-SiC photodiodes in TO metal can package with a suitable molded cap quartz window with high transmission in the ultraviolet wavelength range. The detectors have been tested for the detection of the ultraviolet component of the yellow flame emitted by a small candle, showing good sensitivity for very weak photon fluxes notwithstanding the linear operation condition of the photodiodes.

  20. Improvements in Realizing 4H-SiC Thermal Neutron Detectors

    NASA Astrophysics Data System (ADS)

    Issa, F.; Vervisch, V.; Ottaviani, L.; Szalkai, D.; Vermeeren, L.; Lyoussi, A.; Kuznetsov, A.; Lazar, M.; Klix, A.; Palais, O.; Hallén, A.

    2016-02-01

    In this work we presented two types of 4H-SiC semiconductor detectors (D1 and D2) both based on ion implantation of 10B inside the aluminum metallic contact. The first detector shows a high leakage current after the implantation and low signal to noise ratio. However, improvements concerning the implantation parameters and the distance between the implanted 10B thermal neutron converter layer and the active pn-junction have led to low leakage current and thus to higher signal to noise ratio. This proves the strength of this new method of realizing sensitive SiC-based thermal neutron detectors.

  1. Transient collector modulation of 4H-SiC BJTs during switch-on process

    NASA Astrophysics Data System (ADS)

    Yuferev, Valentin S.; Levinshtein, Michael E.; Ivanov, Pavel A.; Zhang, Jon Q.; Palmour, John W.

    2016-09-01

    Main physical features of the collector resistance modulation processes have been studied via a one-dimensional simulation for n+-p-n0-n+ 4H-SiC bipolar junction transistor. The motion dynamics of minority carriers (holes) across the n0 collector layer during the switch-on process is traced. It is demonstrated that the effective modulation of the collector resistance is only possible in the case of a rather fast transistor switch-on. A necessary condition for the fast switch-on is the large amplitude and short leading edge of the base current pulse.

  2. 4H-SiC JFET Multilayer Integrated Circuit Technologies Tested Up to 1000 K

    NASA Technical Reports Server (NTRS)

    Spry, D. J.; Neudeck, P. G.; Chen, L.; Chang, C. W.; Lukco, D.; Beheim, G. M.

    2015-01-01

    Testing of semiconductor electronics at temperatures above their designed operating envelope is recognized as vital to qualification and lifetime prediction of circuits. This work describes the high temperature electrical testing of prototype 4H silicon carbide (SiC) junction field effect transistor (JFET) integrated circuits (ICs) technology implemented with multilayer interconnects; these ICs are intended for prolonged operation at temperatures up to 773K (500 C). A 50 mm diameter sapphire wafer was used in place of the standard NASA packaging for this experiment. Testing was carried out between 300K (27 C) and 1150K (877 C) with successful electrical operation of all devices observed up to 1000K (727 C).

  3. Eat, Grow, Lead 4-H: An Innovative Approach to Deliver Campus- Based Field Experiences to Pre-Entry Extension Educators

    ERIC Educational Resources Information Center

    Weeks, Penny Pennington; Weeks, William G.

    2012-01-01

    Eat, Grow, Lead 4-H Club was created as a pilot program for college students seeking to gain experience as non-formal youth educators, specifically serving pre-entry level Extension educators through a university-based 4-H club. Seventeen student volunteers contributed an estimated 630 hours of service to the club during spring 2011. The club…

  4. A Mixed Method Study of Positional Leadership of North Dakota 4-H Ambassador and State FFA Officer Alumni

    ERIC Educational Resources Information Center

    Peterson, Nels Milan

    2010-01-01

    The purpose of this mixed method study was to determine the positional leadership of North Dakota 4-H and FFA leadership alumni. This study determined the influence of youth development programs on statewide leadership alumni (those who served from 1970 to 2000) and community leadership roles as adults. Former North Dakota 4-H Ambassador Alumni…

  5. Complete genome sequence of the marine, cellulose and xylan degrading bacterium Glaciecola sp. 4H-3-7+YE-5

    SciTech Connect

    Klippel, Dr Barbara; Bruce, David; Davenport, Karen W.; Goodwin, Lynne A.; Han, James; Han, Shunsheng; Land, Miriam L; Mikhailova, Natalia; Nolan, Matt; Pennacchio, Len; Pitluck, Sam; Tapia, Roxanne; Woyke, Tanja; Wiebusch, Sigrid; Basner, Alexander; Abe, Fumiyoshi; Horikoshi, Koki; Antranikian, Garabed

    2011-01-01

    Glaciecola sp. 4H-3-7+YE-5 was isolated from deep sea sediments at Suruga Bay in Japan and is capable of efficiently hydrolyzing cellulose and xylan. The complete genome sequence of Glaciecola sp. 4H-3-7+YE-5 revealed several genes encoding putatively novel glycoside hydrolases associated with plant biomass degradation.

  6. Characterization of the Minimum Energy Paths for the Ring Closure Reactions of C4H3 with Acetylene

    NASA Technical Reports Server (NTRS)

    Walch, Stephen P.

    1995-01-01

    The ring closure reaction of C4H3 with acetylene to give phenyl radical is one proposed mechanism for the formation of the first aromatic ring in hydrocarbon combustion. There are two low-lying isomers of C4H3; 1-dehydro-buta-l-ene-3-yne (n-C4H3) and 2-dehydro-buta-l-ene-3-yne (iso-C4H3). It has been proposed that only n-C4H3 reacts with acetylene to give phenyl radical, and since iso-C4H3 is more stable than n-C4H3, formation of phenyl radical by this mechanism is unlikely. We report restricted Hartree-Fock (RHF) plus singles and doubles configuration interaction calculations with a Davidson's correction (RHF+1+2+Q) using the Dunning correlation consistent polarized valence double zeta basis set (cc-pVDZ) for stationary point structures along the reaction pathway for the reactions of n-C4H3 and iso-C4H3 with acetylene. n-C4H3 plus acetylene (9.4) has a small entrance channel barrier (17.7) (all energetics in parentheses are in kcal/mol with respect to iso-C4H3 plus acetylene) and the subsequent closure steps leading to phenyl radical (-91.9) are downhill with respect to the entrance channel barrier. Iso-C4H3 Plus acetylene also has an entrance channel barrier (14.9) and there is a downhill pathway to 1-dehydro-fulvene (-55.0). 1-dehydro-fulvene can rearrange to 6-dehydro-fulvene (-60.3) by a 1,3-hydrogen shift over a barrier (4.0), which is still below the entrance channel barrier, from which rearrangement to phenyl radical can occur by a downhill pathway. Thus, both n-C4H3 and iso-C4H3 can react with acetylene to give phenyl radical with small barriers.

  7. Theoretical study of radiative electron attachment to CN, C2H, and C4H radicals.

    PubMed

    Douguet, Nicolas; Fonseca dos Santos, S; Raoult, Maurice; Dulieu, Olivier; Orel, Ann E; Kokoouline, Viatcheslav

    2015-06-21

    A first-principle theoretical approach to study the process of radiative electron attachment is developed and applied to the negative molecular ions CN(-), C4H(-), and C2H(-). Among these anions, the first two have already been observed in the interstellar space. Cross sections and rate coefficients for formation of these ions by direct radiative electron attachment to the corresponding neutral radicals are calculated. For the CN molecule, we also considered the indirect pathway, in which the electron is initially captured through non-Born-Oppenheimer coupling into a vibrationally resonant excited state of the anion, which then stabilizes by radiative decay. We have shown that the contribution of the indirect pathway to the formation of CN(-) is negligible in comparison to the direct mechanism. The obtained rate coefficients for the direct mechanism at 30 K are 7 × 10(-16) cm(3)/s for CN(-), 7 × 10(-17) cm(3)/s for C2H(-), and 2 × 10(-16) cm(3)/s for C4H(-). These rates weakly depend on temperature between 10 K and 100 K. The validity of our calculations is verified by comparing the present theoretical results with data from recent photodetachment experiments. PMID:26093561

  8. Effect of Doping Concentration Variations in PVT-Grown 4H-SiC Wafers

    NASA Astrophysics Data System (ADS)

    Yang, Yu; Guo, Jianqiu; Goue, Ouloide; Raghothamachar, Balaji; Dudley, Michael; Chung, Gil; Sanchez, Edward; Quast, Jeff; Manning, Ian; Hansen, Darren

    2016-04-01

    Synchrotron white beam x-ray topography studies carried out on 4H-SiC wafers characterized by locally varying doping concentrations reveals the presence of overlapping Shockley stacking faults generated from residual surface scratches in regions of higher doping concentrations after the wafers have been subjected to heat treatment. The stacking faults are rhombus-shaped and bound by Shockley partial dislocations. The fault generation process is driven by the fact that in regions of higher doping concentrations, a faulted crystal containing double Shockley faults is more stable than a perfect 4H-SiC crystal at the high temperatures (>1000°C) that the wafers are subject to during heat treatment. We have developed a model for the formation mechanism of the rhombus-shaped stacking faults. Our studies show that during heat treatment of the wafer, such double Shockley faults can be generated in regions where dislocation sources are presents (e.g. scratches or low-angle boundaries) and when the nitrogen doping concentration exceeds a certain level.

  9. Characterization of V-shaped defects in 4H-SiC homoepitaxial layers

    DOE PAGESBeta

    Zhang, Lihua; Su, Dong; Kisslinger, Kim; Stach, Eric; Chung, Gil; Zhang, Jie; Thomas, Bernd; Sanchez, Edward K; Mueller, Stephan G.; Hansen, Darren; et al

    2014-12-04

    Synchrotron white beam x-ray topography images show that faint needle-like surface morphological features observed on the Si-face of 4H-SiC homoepitaxial layers using Nomarski optical microscopy are associated with V shaped stacking faults in the epilayer. KOH etching of the V shaped defect reveals small oval pits connected by a shallow line which corresponding to the surface intersections of two partial dislocations and the stacking fault connecting them. Transmission electron microscopy (TEM) specimens from regions containing the V shaped defects were prepared using focused ion beam milling, and stacking sequences of (85), (50) and (63) are observed at the faulted regionmore » with high resolution TEM. In order to study the formation mechanism of V shaped defect, low dislocation density 4H-SiC substrates were chosen for epitaxial growth, and the corresponding regions before and after epitaxy growth are compared in SWBXT images. It is found that no defects in the substrate are directly associated with the formation of the V shaped defect. Simulation results of the contrast from the two partial dislocations associated with V shaped defect in synchrotron monochromatic beam x-ray topography reveals the opposite sign nature of their Burgers vectors. Therefore, a mechanism of 2D nucleation during epitaxy growth is postulated for the formation of the V shaped defect, which requires elimination of non-sequential 1/4[0001] bilayers from the original structure to create the observed faulted stacking sequence.« less

  10. Characterization of V-shaped defects in 4H-SiC homoepitaxial layers

    SciTech Connect

    Zhang, Lihua; Su, Dong; Kisslinger, Kim; Stach, Eric; Chung, Gil; Zhang, Jie; Thomas, Bernd; Sanchez, Edward K; Mueller, Stephan G.; Hansen, Darren; Loboda, Mark J.; Wu, Fangzhen; Wang, Huanhuan; Raghothamachar, Balaji; Dudley, Michael

    2014-12-04

    Synchrotron white beam x-ray topography images show that faint needle-like surface morphological features observed on the Si-face of 4H-SiC homoepitaxial layers using Nomarski optical microscopy are associated with V shaped stacking faults in the epilayer. KOH etching of the V shaped defect reveals small oval pits connected by a shallow line which corresponding to the surface intersections of two partial dislocations and the stacking fault connecting them. Transmission electron microscopy (TEM) specimens from regions containing the V shaped defects were prepared using focused ion beam milling, and stacking sequences of (85), (50) and (63) are observed at the faulted region with high resolution TEM. In order to study the formation mechanism of V shaped defect, low dislocation density 4H-SiC substrates were chosen for epitaxial growth, and the corresponding regions before and after epitaxy growth are compared in SWBXT images. It is found that no defects in the substrate are directly associated with the formation of the V shaped defect. Simulation results of the contrast from the two partial dislocations associated with V shaped defect in synchrotron monochromatic beam x-ray topography reveals the opposite sign nature of their Burgers vectors. Therefore, a mechanism of 2D nucleation during epitaxy growth is postulated for the formation of the V shaped defect, which requires elimination of non-sequential 1/4[0001] bilayers from the original structure to create the observed faulted stacking sequence.

  11. Point defects in 4H-SiC epilayers introduced by neutron irradiation

    NASA Astrophysics Data System (ADS)

    Hazdra, Pavel; Záhlava, Vít; Vobecký, Jan

    2014-05-01

    Electronic properties of radiation damage produced in 4H-SiC by neutron irradiation and its effect on electrical parameters of Junction Barrier Schottky (JBS) diodes were investigated. 4H-SiC N-epilayers, which formed the low-doped N-base of JBS power diodes, were irradiated with 1 MeV neutrons with fluences ranging from 1.3 × 1013 to 4.0 × 1014 cm-2. Radiation defects were then characterized by capacitance deep-level transient spectroscopy, I-V and C-V measurement. Results show that neutron irradiation introduces different point defects giving rise to acceptor levels lying 0.61/0.69, 0.88, 1.03, 1.08 and 1.55 eV below the SiC conduction band edge. Introduction rates of these centers are ranging from 0.64 to 4.0 cm-1. These defects have a negligible effect on blocking and dynamic characteristics of irradiated diodes. However, the acceptor character of introduced deep levels and their fast introduction deteriorate diode's ON-state resistance already at fluences exceeding 1 × 1014 cm-2.

  12. n-ZnO/p-4H-SiC diode: Structural, electrical, and photoresponse characteristics

    SciTech Connect

    Guziewicz, M. Jung, W.

    2015-09-07

    Epitaxial n-type ZnO film has been grown, on a commercial 5 μm thick p-type 4H-SiC(00.1) Al doped epilayer, by atomic layer deposition. A full width at half maximum of the ZnO 00.2 diffraction peak rocking curve of 0.34°{sup  }± 0.02° has been measured. Diodes formed on the n-ZnO/p-4H-SiC heterostructure show rectifying behavior with a forward to reverse current ratio at the level of 10{sup 9} at ±4 V, a leakage current density of ∼6 × 10{sup −8} A/cm{sup 2}, and a low ideality factor equal to 1.17 ± 0.04. In addition, the diodes exhibit selective photoresponse with a maximum at 367 nm, and with a current increase of ∼10{sup 3} under illuminations with respect to the dark value, which makes such devices prospective candidates for ultraviolet light sensors.

  13. Infrared spectrum of NH4+(H2O): Evidence for mode specific fragmentation

    SciTech Connect

    Pankewitz, Tobias; Lagutschenkov, Anita; Niedner-schatteburg, Gereon; Xantheas, Sotiris S; Lee, Yuan-Tseh

    2007-02-21

    The gas phase infrared spectrum (3250 to 3810 cm1) of the singly hydrated ammonium ion, NH4+(H2O), has been recorded by consequence spectroscopy of mass selected and isolated ions. The obtained four bands are assigned to N-H stretching modes and O-H stretching modes, respectively. The observed N-H stretching modes are blueshifted with respect to the corresponding modes of the free NH4+ ion, whereas a redshift is observed with respect to the modes of the free NH3 molecule. The observed O-H stretching modes are redshifted when compared to the free H2O molecule. The asymmetric stretching modes give rise to rotationally resolved perpendicular transitions. The K-type equidistant rotational spacings of 11.1(2) cm1 (NH4+) and 29(3) cm1 (H2O) deviate systematically from the corresponding values of the free molecules, a fact which is rationalized in terms of a symmetric top analysis. The recorded relative band intensities compare favorably with predictions of high level ab initio calculations except for the 3(H2O) band for which the observed value is about 20 times weaker than the calculated one. This long standing puzzle motivated us to examine the a 3(H2O)/1(H2O) intensity ratios from other published action spectra in other cationic complexes. These suggest that the 3(H2O) intensities become smaller the stronger the complexes are bound. The recorded ratios vary, in particular among the data collected from action spectra that were recorded with and without rare gas tagging. The calculated anharmonic coupling constants in NH4+(H2O) further suggested that the coupling of the 3(H2O) and 1(H2O) modes to other cluster modes indeed varies by orders of magnitude. These findings altogether render the picture of a mode specific fragmentation dynamic that modulates band intensities in action spectra with respect to absorption spectra. Additional high-level electronic structure calculations at the coupled-cluster single and double with perturbative treatment of triple excitations

  14. Theoretical prediction of the ionization energies of the C4H7 radicals: 1-methylallyl, 2-methylallyl, cyclopropylmethyl, and cyclobutyl radicals.

    PubMed

    Lau, Kai-Chung; Zheng, Wenxu; Wong, Ning-Bew; Li, Wai-Kee

    2007-10-21

    The ionization energies (IEs) for the 1-methylallyl, 2-methylallyl, cyclopropylmethyl, and cyclobutyl radicals have been calculated by the wave function based ab initio CCSD(T)/CBS approach, which involves the approximation to the complete basis set (CBS) limit at the coupled cluster level with single and double excitations plus quasiperturbative triple excitation [CCSD(T)]. The zero-point vibrational energy correction, the core-valence electronic correction, and the scalar relativistic effect correction are included in these calculations. The present CCSD(T)/CBS results are then compared with the IEs determined in the photoelectron experiment by Schultz et al. [J. Am. Chem. Soc. 106, 7336 (1984)] The predicted IE value (7.881 eV) of 2-methylallyl radical is found to compare very favorably with the experimental value of 7.90+/-0.02 eV. Two ionization transitions for cis-1-methylallyl and trans-1-methylallyl radicals have been considered here. The comparison between the predicted IE values and the previous measurements shows that the photoelectron peak observed by Schultz et al. likely corresponds to the adiabatic ionization transition for the trans-1-methylallyl radical to form trans-1-methylallyl cation. Although a precise IE value for the cyclopropylmethyl radical has not been directly determined, the experimental value deduced indirectly using other known energetic data is found to be in good accord with the present CCSD(T)/CBS prediction. We expect that the Franck-Condon factor for ionization transition of c-C4H7-->bicyclobutonium is much less favorable than that for ionization transition of c-C4H7-->planar-C4H7+, and the observed IE in the previous photoelectron experiment is likely due to the ionization transition for c-C4H7-->planar-C4H7+. Based on our CCSD(T)/CBS prediction, the ionization transition of c-C4H7-->bicyclobutonium with an IE value around 6.92 eV should be taken as the adiabatic ionization transition for the cyclobutyl radical. The present

  15. Design, fabrication, and characterization of 4H-silicon carbide rectifiers for power switching applications

    NASA Astrophysics Data System (ADS)

    Sheridan, David Charles

    Silicon Carbide has received a substantial increase in research interest over the past few years as a base material system for high-frequency and high-power semiconductor devices. Of the over 1200 polytypes, 4H-SiC is the most attractive polytype for power devices due to its wide band gap (3.2eV), excellent thermal conductivity (4.9 W/cm·K), and high critical field strength (˜2 x 106 V/cm). Important for power devices, the 10x increase in critical field strength of SiC allows high voltage blocking layers to be fabricated significantly thinner than for comparable Si devices. For power rectifiers, this reduces device on-resistance, while maintaining the same high voltage blocking capability. In this work, 4H-SiC Schottky, pn, and junction barrier Schottky (JBS) rectifiers for use in high voltage switching applications have been designed, fabricated, and extensively characterized. First, a detailed review of 4H-SiC material parameters was performed and SiC models were implemented into a standard Si drift-diffusion numerical simulator. Using these models, a SiC simulation methodology was developed in order to enable predictive SiC device design. A wide variety of rectifier and edge termination designs were investigated and optimized with respect to breakdown efficiency, area consumption, resistance to interface charge, and fabrication practicality. Simulated termination methods include: field plates, floating guard rings, and a variety of junction termination extensions (JTE). Using the device simulation results, both Schottky and JBS rectifiers were fabricated with a novel self-aligned edge termination design, and fabricated with process elements developed at the Alabama Microelectronics Science and Technology Center facility. These rectifiers exhibited near-ideal forward characteristics and had blocking voltages in excess of 2.5kV. The SiC diodes were subjected to inductive switching tests, and were found to have superior reverse recovery characteristics compared

  16. Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

    NASA Astrophysics Data System (ADS)

    Schilirò, Emanuela; Lo Nigro, Raffaella; Fiorenza, Patrick; Roccaforte, Fabrizio

    2016-07-01

    This letter reports on the negative charge trapping in Al2O3 thin films grown by atomic layer deposition onto oxidized silicon carbide (4H-SiC). The films exhibited a permittivity of 8.4, a breakdown field of 9.2 MV/cm and small hysteresis under moderate bias cycles. However, severe electron trapping inside the Al2O3 film (1 × 1012 cm-2) occurs upon high positive bias stress (>10V). Capacitance-voltage measurements at different temperatures and stress conditions have been used to determine an activation energy of 0.1eV. The results provide indications on the possible nature of the trapping defects and, hence, on the strategies to improve this technology for 4H-SiC devices.

  17. Pyrazolo[3,4-h]quinolines promising photosensitizing agents in the treatment of cancer.

    PubMed

    Spanò, Virginia; Parrino, Barbara; Carbone, Anna; Montalbano, Alessandra; Salvador, Alessia; Brun, Paola; Vedaldi, Daniela; Diana, Patrizia; Cirrincione, Girolamo; Barraja, Paola

    2015-09-18

    A new series of pyrazolo[3,4-h]quinolines, heteroanalogues of angelicin was conveniently prepared with a broad substitution pattern. A large number of derivatives was obtained and the cellular photocytotoxicity was evaluated in vitro against 5 different human tumor cell lines with GI50 values reaching the nanomolar level (14.52-0.04 μM). Selected compounds were able to photoinduce a massive cell death with the involvement of mitochondria. Their photodamage cellular targets were proteins and lipids and they did not cause any kind of DNA photodamage. This latter event is of considerable importance in the modulation of long term side effects, generally associated with the use of classical furocoumarins. PMID:26295175

  18. A complete analytical potential based solution for a 4H-SiC MOSFET in nanoscale

    NASA Astrophysics Data System (ADS)

    Yadav, M. K.; Pradhan, K. P.; Sahu, P. K.

    2016-06-01

    Analytical modeling with a verified simulation setup of surface potential, threshold voltage and electric field for a 4H-SiC MOSFET is presented to make enquiries about the short channel effects. The two-dimensional (2D) Poisson equation is used to achieve the model for surface potential. The 2D position equations have been solved by using four boundary conditions. The detail of the model is appraised by the various MOSFET parameters such as silicon carbide thickness, body doping concentration, and gate oxide influencing the electric field, channel potential and threshold voltage. The outcome shows that this model can reduce the short channel effects, drain induced barrier lowering and advance the sub-threshold fulfillment in nanoelectronic applications as compared to silicon MOSFETs. By comparing the model results with the 2D device simulations the veracity of the suggested 2D analytical model is proven.

  19. Synthesis, crystal structure and characterization of [C9H11N4] H2PO4

    NASA Astrophysics Data System (ADS)

    Chtourou, A.; Boujelbene, M.; Allouch, F.; Mhiri, T.

    2014-04-01

    Chemical preparation crystal structure and spectroscopic investigations are given for a new organic-cation dihydrogenomonophosphate (C9H11N4) H2PO4 in the solid state. This compound crystallizes in the monoclinic space group P 21 with the following unit cell parameters: a = 9.640 (5) Ǻ. b = 4.582 (5) Ǻ. c = 14.094 (5) Ǻ, β = 106.979 (5)°, Z = 2, V = 595.4 (7) Å3. Crystal structure was solved with a final R = 0.054 for 2077 independent reflections. The atomic arrangement can be described as inorganic layers of HPO4- anions between which are located the organic groups. Solid-state 13C and 31P MAS-NMR spectroscopies are in agreement with the X-ray structure. Ab initio calculations allow the attribution of the phosphorous and carbon signals to the independent crystallographic sites and to the various atoms of the organic groups.

  20. Evidence for near-infrared photoluminescence of nitrogen vacancy centers in 4 H -SiC

    NASA Astrophysics Data System (ADS)

    Zargaleh, S. A.; Eble, B.; Hameau, S.; Cantin, J.-L.; Legrand, L.; Bernard, M.; Margaillan, F.; Lauret, J.-S.; Roch, J.-F.; von Bardeleben, H. J.; Rauls, E.; Gerstmann, U.; Treussart, F.

    2016-08-01

    We present evidence of near-infrared photoluminescence (PL) signature of nitrogen vacancy centers (NCVSi) - in silicon carbide (SiC). This center exhibits an S =1 ground state spin similar to the NV- center in diamond. We have performed photoluminescence excitation measurements at cryogenic temperature and demonstrated efficient photoexcitation of distinct photoluminescence from (NCVSi)- in 4 H -SiC. Furthermore, by correlating the energies of measured zero phonon lines (ZPLs) with theoretical values derived from hybrid density functional theory each of the ZPLs has been associated to the respective occupation of hexagonal (h ) and quasicubic (k ) lattice sites in close analogy to neutral divacancy centers (VCVSi) 0 in the same material. Finally, with the appropriate choice of excitation energy we demonstrated the selective excitation of (NCVSi) - PL with no contamination by (VCVSi) 0 PL, thereby opening the way towards the optical detection of (NCVSi) - electron spin resonance.

  1. High mobility Single Layer Epitaxial Graphene on 4H-SiC (000-1)

    NASA Astrophysics Data System (ADS)

    Hu, Yike; Guo, Zelei; Ruan, Ming; Hankinson, John; Palmer, James; Zhang, Baiqian; Dong, Rui; Kunc, Jan; Berger, Claire; Deheer, Walt

    2012-02-01

    Multi-layer Epitaxial Graphene on 4H-SiC (000-1) has demonstrated very high mobility up to˜27,000 cm^2/Vs [1]. Recently single layer graphene grown by the Confinement Control Growth method [2] exhibits mobility up to ˜ 25,000cm^2/V.s at 4K and 13,000 cm^2/V.s at 300K with p=3 x 10^12 cm-2 The relation between Raman G peak features (FWHM and position) and carrier density of Epitaxial Graphene on carbon face is revealed. Quantum Hall Effect [3] is observed both for p and n type carriers on top gated sample. This indicates that top gated single layer graphene can be produced on the Carbon face with high quality and high carrier mobility. [4pt] [1] Science 312, 1191 (2006) [0pt] [2] PNAS 108 (41) 16900 (2011) [0pt] [3] APL 95, 223108 (2009)

  2. Thermally induced twin polymerization of 4H-1,3,2-benzodioxasilines.

    PubMed

    Kempe, Patrick; Löschner, Tina; Auer, Alexander A; Seifert, Andreas; Cox, Gerhard; Spange, Stefan

    2014-06-23

    The twin monomer 2,2'-spirobi[4H-1,3,2-benzodioxasiline] (1) can be polymerized to nanostructured SiO2/phenolic-resin composite material by thermally induced twin polymerization. Thermally induced twin polymerization represents a way to produce nanocomposites simply by thermal induction of twin monomers. Besides 1, the thermal reaction of several related salicylic (2-oxybenzylic) silicon molecules has been investigated. The thermal cleavage of the molecules is studied by using several trapping reagents (e.g., vinyl compounds). A significant occurrence of quinone methide adducts indicates that the thermal mechanism proceeds not only by a ring opening at the oxymethylene position, but also with the ortho-quinone methide as a central or alternative intermediate. This is supported by product analyses of thermally initialized reactions of 1 and its substituted analogues as well as by quantum chemical calculations. PMID:24849004

  3. Characterization of N-doped multilayer graphene grown on 4H-SiC (0001)

    SciTech Connect

    Arezki, Hakim Jaffré, Alexandre; Alamarguy, David; Alvarez, José; Kleider, Jean-Paul; Boutchich, Mohamed; Ho, Kuan-I; Lai, Chao-Sung

    2015-02-27

    Large-area graphene film doped with hetero-atoms is of great interest for a wide spectrum of nanoelectronics applications, such as field effect devices, super capacitors, fuel cells among many others. Here, we report the structural and electronic properties of nitrogen doped multilayer graphene on 4H-SiC (0001). The incorporation of nitrogen during the growth causes an increase in the D band on the Raman signature indicating that the nitrogen is creating defects. The analysis of micro-Raman mapping of G, D, 2D bands shows a predominantly trilayer graphene with a D band inherent to doping and inhomogeneous dopant distribution at the step edges. Ultraviolet photoelectron spectroscopy (UPS) indicates an n type work function (WF) of 4.1 eV. In addition, a top gate FET device was fabricated showing n-type I-V characteristic after the desorption of oxygen with high electron and holes mobilities.

  4. High current gain 4H-SiC bipolar junction transistor

    NASA Astrophysics Data System (ADS)

    Yourun, Zhang; Jinfei, Shi; Ying, Liu; Chengchun, Sun; Fei, Guo; Bo, Zhang

    2016-04-01

    A novel 4H-SiC BJT of high current gain with a suppressing surface traps effect has been proposed. It is effective to improve the current gain due to the lower electrons density in the surface region by extending the emitter metal to overlap the passivation layer on the extrinsic base surface. The electrons trapped in the extrinsic base surface induce the degeneration of SiC BJTs device performance. By modulating the electron recombination rate, the novel structure can increase the current gain to 63.2% compared with conventional ones with the compatible process technology. Optimized sizes are an overlapped metal length of 4 μm, as well as an oxide layer thickness of 50 nm. Project supported by the National Natural Science Foundation of China (Nos. 61306093, 61401075).

  5. Rapid diagnosis of cholera by coagglutination test using 4-h fecal enrichment cultures.

    PubMed Central

    Rahman, M; Sack, D A; Mahmood, S; Hossain, A

    1987-01-01

    A simple, rapid, and reliable method to detect Vibrio cholerae in fecal specimens would assist in the management of cases of severe diarrhea, especially since most such cases occur in areas with minimal laboratory facilities. A coagglutination test was used to detect V. cholerae antigen in bile-peptone broth incubated with feces. In the technique, Staphylococcus aureus Cowan 1 coated with anti-V. cholerae O1 antiserum was tested with cultures incubated for 4 h. When 165 specimens were tested, the sensitivity, specificity, and accuracy of the test, compared with standard culture methods, were 97, 99, and 98%, respectively. These promising results were better than those of dark-field microscopy using the same specimens, and the test was logistically easy to perform. The coagglutination test using enrichment broth culture of feces is a simple and rapid method which may be used to confirm a diagnosis of cholera. PMID:3693549

  6. 4H-SiC UV Photo Detector with Large Area and Very High Specific Detectivity

    NASA Technical Reports Server (NTRS)

    Yan, Feng; Shahid, Aslam; Franz, David; Xin, Xiaobin; Zhao, Jian H.; Zhao, Yuegang; Winer, Maurice

    2004-01-01

    Pt/4H-SiC Schottky photodiodes have been fabricated with the device areas up to 1 sq cm. The I-V characteristics and photo-response spectra have been measured and analyzed. For a 5 mm x 5 mm area device leakage current of 1 x 10(exp 15)A at zero bias and 1.2 x 10(exp 14)A at -IV have been established. The quantum efficiency is over 30% from 240nm to 320nm. The specific detectivity, D(sup *), has been calculated from the directly measured leakage current and quantum efficiency data and are shown to be higher than 10(exp 15) cmHz(sup 1/2)/W from 210nm to 350nm with a peak D(sup *) of 3.6 x 10(exp 15)cmH(sup 1/2)/W at 300nm.

  7. Band gap states of Ti, V, and Cr in 4H-silicon carbide

    NASA Astrophysics Data System (ADS)

    Achtziger, Norbert; Witthuhn, Wolfgang

    1997-07-01

    Band gap states of Ti, V, and Cr in n-type 4H-SiC were investigated by radiotracer deep level transient spectroscopy (DLTS). Doping with the radioactive isotopes 48V and 51Cr was done by recoil implantation followed by annealing (1600 K). Repeated DLTS measurements during the elemental transmutation of these isotopes to 48Ti and 51V, respectively, reveal the corresponding concentration changes of band gap states. Thus, six levels are identified in the band gap: Cr levels at 0.15, 0.18, and 0.74 eV, one V level at 0.97 eV, and two Ti levels at 0.13 and 0.17 eV below the conduction band edge.

  8. Detection of powder formation in SiH4/H2 glow discharges

    NASA Astrophysics Data System (ADS)

    Alexiou, G.; Tsigaras, G.; Amanatides, E.; Mataras, D.

    2016-03-01

    Time-resolved self-bias voltage measurements and spatiotemporal resolved optical emission spectroscopy were used in order to monitor particle formation and instabilities in the initial stage of 13.56 MHz SiH4/H2. The effect of total gas pressure on the particles formation and the time required for the plasma to reach steady state was investigated. Both techniques were very sensitive in monitoring the nucleation and coagulation phase of particles formation. The characteristic times required for reaching steady state were similar for both techniques indicating that electrical properties and chemical kinetics are affected in a similar way from particle formation. The increase of pressure resulted in a significant shortening of the instability period and this can be a significant advantage in the deposition of device grade silicon thin films.

  9. An evaluation of the 4-H Health Rocks program: implications for program improvement.

    PubMed

    Self, Carlton; Morgan, A Christian; Fuhrman, Nicholas E; Navarro, Maria

    2013-01-01

    The National 4-H Council developed the Health Rocks substance abuse educational program to prevent youth from engaging in risky behaviors. The program was presented in 2010 to more than 8,000 middle school youth in Georgia. A post-then-pre evaluation was conducted with youth who completed 10 hours of instruction to determine if changes in youth knowledge, beliefs/attitudes, skills, and behavioral intentions occurred during the course of the program. This study sought to measure the impact of the program and critically evaluate the questionnaire used. The data revealed statistically significant increases in knowledge, beliefs/attitudes, skills, and behavioral intentions of participating youth. Suggestions for improvement of the questionnaire included utilizing questions that are more specific to the curriculum and adding questions to measure the influence of peer pressure. PMID:24855883

  10. Irradiation of 4H-SiC UV detectors with heavy ions

    SciTech Connect

    Kalinina, E. V. Lebedev, A. A.; Bogdanova, E.; Berenquier, B.; Ottaviani, L.; Violina, G. N.; Skuratov, V. A.

    2015-04-15

    Ultraviolet (UV) photodetectors based on Schottky barriers to 4H-SiC are formed on lightly doped n-type epitaxial layers grown by the chemical vapor deposition method on commercial substrates. The diode structures are irradiated at 25°C by 167-MeV Xe ions with a mass of 131 amu at a fluence of 6 × 10{sup 9} cm{sup −2}. Comparative studies of the optical and electrical properties of as-grown and irradiated structures with Schottky barriers are carried out in the temperature range 23–180°C. The specific features of changes in the photosensitivity and electrical characteristics of the detector structures are accounted for by the capture of photogenerated carriers into traps formed due to fluctuations of the conduction-band bottom and valence-band top, with subsequent thermal dissociation.

  11. The problem of uniformity of properties of 4H-SiC CVD films

    SciTech Connect

    Ivanov, A. M. Strokan, N. B.; Scherbov, N. A.; Lebedev, A. A.

    2010-07-15

    Nonuniformities of electrical properties of 4H-SiC CVD films have been revealed using physicochemical reactions occurring upon introduction of radiation-induced structural defects. Primary knocked-on atoms and vacancies actively interact with impurities and defects of the starting material and thereby form the final system of radiation centers. The samples were irradiated with 900-keV electrons and 8-MeV protons at doses not leading to conductivity compensation (<7.5 x 10{sup 12} cm{sup -2}) and a dose of 6 x 10{sup 14} cm{sup -2} causing deep compensation. Despite their area-averaging nature, capacitance methods demonstrated that characteristics of samples {approx}3 mm in size are not identical. The nuclear spectrometry technique, which enables microprobing of samples, demonstrated individual behavior of separate parts of a film with areas of tens of square micrometers.

  12. Measurement of Spin Coherence Times in Proton Irradiated 4H-SiC

    NASA Astrophysics Data System (ADS)

    Embley, Jacob; Colton, John; Carter, Sam; Miller, Kyle; Morris, Margaret

    Silicon vacancy defects in silicon carbide (SiC) have potential for use in spintronic devices. We used optically detected magnetic resonance and a spin echo technique to measure T2 spin coherence times for electrons in 4H-SiC. These experiments were performed at a magnetic field strength of 0.371 T and a resonant microwave frequency of 10.5 GHz. Each sample contained silicon vacancy defects that were formed through irradiation with 2 MeV protons at unique fluences (1013 and 1014 cm-2) . Measurements for each sample were made across a range of temperatures, from 8 K to room temperature. While we generally observed a decrease in spin coherence time with temperature, we also observed a range of temperatures (from 60 K to 160 K) for which the overall trend was reversed.

  13. Characterization and Modeling of 4H-SiC Lateral MOSFETs for Integrated Circuit Design

    SciTech Connect

    Mudholkar, M; Mantooth, HA

    2013-06-01

    A new process in 4H-SiC is developed that features n-type buried and inversion channel lateral MOSFETs that are fabricated with several different channel lengths (2-8 mu m) and widths (8-32 mu m) and characterized over a wide temperature range (25 degrees C-225 degrees C). It is shown that the on-resistance of enhancement-mode SiC MOSFETs reduces with temperature despite a reduction in inversion mobility because of the interaction of interface states with temperature. To enable integrated circuit development using the developed MOSFETs, their electrical characteristics are modeled over geometry and temperature using the industry standard PSP MOSFET model. A new mathematical formulation to describe the presence of the interface states is also developed and implemented in the PSP model, and excellent agreement is shown between measurement and simulation using the modified PSP model.

  14. Characterization of Si and C implantation induced defects in 4H-SiC

    NASA Astrophysics Data System (ADS)

    Kummari, Venkata; Dhoubhadel, Mangal; Rout, Bibhudutta; Reinert, Tilo; Spemann, Daniel; Jiang, Weilin; McDaniel, Floyd

    2011-10-01

    Silicon Carbide is considered to be a promising material for dilute magnetic semiconductors (DMSs). Past experimental studies reveal that ferromagnetism can be observed in SiC diluted with 3d transition metals. Recent studies, based on first principle calculations, show that for SiC monolayers, the presence of silicon vacancies (VSi) may induce local magnetization. However, no spin polarization occurs for carbon vacancies (VC), Si+C divacancies, and Si-C antisite defects. Ion implantation is an excellent technique to create vacancies for defect induced magnetism. We have implanted Si and C into 4H-SiC at low energy 60 keV to study the implantation defects for different fluences which corresponds to different percentages of simulated damages (e.g. 10 -- 60 %) obtained using Monte-Carlo simulations code SRIM/TRIM-2008. Defect disorder after ion implantation has been investigated using Rutherford Backscattering Spectrometry/Channeling (RBS/C) and Raman spectroscopy.

  15. Meridional Distribution of CH3C2H and C4H2 in Saturn's Stratosphere from CIRS/Cassini Limb and Nadir Observations

    NASA Technical Reports Server (NTRS)

    Guerlet, Sandrine; Fouchet, Thierry; Bezard, Bruno; Moses, Julianne I.; Fletcher, Leigh N.; Simon-Miller, Amy A.; Flasar, F. Michael

    2010-01-01

    Limb and nadir spectra acquired by Cassini/CIRS (Composite InfraRed Spectrometer) are analyzed in order to derive, for the first time, the meridional variations of diacetylene (C4H2) and methylacetylene (CH3C2H) mixing ratios in Saturn's stratosphere, from 5 hPa up to 0.05 hPa and 80 deg S to 45 deg N. We find that the C4H2 and CH3C2H meridional distributions mimic that of acetylene (C2H2), exhibiting small-scale variations that are not present in photochemical model predictions. The most striking feature of the meridional distribution of both molecules is an asymmetry between mid-southern and mid-northern latitudes. The mid-southern latitudes are found depleted in hydrocarbons relative to their northern counterparts. In contrast, photochemical models predict similar abundances at north and south mid-latitudes. We favor a dynamical explanation for this asymmetry, with upwelling in the south and downwelling in the north, the latter coinciding with the region undergoing ring shadowing. The depletion in hydrocarbons at mid-southern latitudes could also result from chemical reactions with oxygen-bearing molecules. Poleward of 60 deg S, at 0.1 and 0.05 hPa, we find that the CH3C2H and C4H2 abundances increase dramatically. This behavior is in sharp contradiction with photochemical model predictions, which exhibit a strong decrease towards the south pole. Several processes could explain our observations, such as subsidence, a large vertical eddy diffusion coefficient at high altitudes, auroral chemistry that enhances CH3C2H and C4H2 production, or shielding from photolysis by aerosols or molecules produced from auroral chemistry. However, problems remain with all these hypotheses, including the lack of similar behavior at lower altitudes. Our derived mean mixing ratios at 0.5 hPa of (2.4 +/- 0.3) 10(exp -10) for C4H2 and of (1.1 +/- 0.3) 10(exp -9) for CH3C2H are compatible with the analysis of global-average ISO observations performed by Moses et al. Finally, we provide

  16. The effect of CH4/H2 ratio on the surface properties of HDPE treated by CHx ion beam bombardment

    NASA Astrophysics Data System (ADS)

    Ding, Wanyu; Guo, Yuanyuan; Ju, Dongying; Sato, Susumu; Tsunoda, Teruo

    2016-06-01

    The surface of high density polyethylene (HDPE) substrate was bombarded by the CHx group ion beam, which was generated by the mixture of CH4/H2. Varying the CH4/H2 ratio, HDPE surfaces with different chemical bond structures and properties were obtained. Raman and XPS results show that sp2 and sp3 bond structures are formed at HDPE surface bombarded by CHx group ions. The sp3 bond fraction at bombarded HDPE surface depends on the H2 ratio in CH4/H2 mixture, because the H ion/atom/molecule can improve the growth of sp3 bond structure. For HDPE surface bombarded by CH4/H2 = 50/50, sp3 bond fraction reaches the maximum of 30.5%, the surface roughness decreases to 17.04 nm, and the static contact angle of polar H2O molecule increased to 140.2∘.

  17. Effects of Surface and Crystalline Defects on Reverse Characteristics of 4H-SiC Junction Barrier Schottky Diodes

    NASA Astrophysics Data System (ADS)

    Katsuno, Takashi; Watanabe, Yukihiko; Fujiwara, Hirokazu; Konishi, Masaki; Yamamoto, Takeo; Endo, Takeshi

    2011-04-01

    To clarify the relationship between the dispersed reverse characteristics of 4H-SiC junction barrier Schottky (JBS) diodes and defects, we investigated the sensitivity of the reverse characteristics to surface and crystalline defects in 4H-SiC epitaxial layers. Strong correlations were obtained between the reverse characteristics of 4H-SiC JBS diodes and surface defects. Micropipes or particles reduced blocking voltage and carrot defects increased leakage current. Furthermore, the leakage current of 4H-SiC JBS diodes depends on the etch pit density of threading dislocations (TDs). Etch pits formed from TDs increased leakage current by about 10-9 A in samples without surface defects. In addition, hexagonal etch pits formed from unusual crystalline defects were observed; they also increased leakage current.

  18. Synthesis, crystal structure, thermal analysis and dielectric properties of [(C4H9)4N]3Bi2Cl9 compound

    NASA Astrophysics Data System (ADS)

    Trigui, W.; Oueslati, A.; Chaabane, I.; Hlel, F.

    2015-07-01

    A new organic-inorganic tri-tetrabutylammonium nonachlorobibismuthate(III) compound was prepared. It was found to crystallize in the monoclinic system (P21/n space group) with the following lattice parameters: a=11.32(2) Å, b=22.30(3) Å, c=28.53(2) Å and β=96.52(0)°. The [Bi2Cl9]3- anions are surrounded by six [(C4H9)N]+ cations, forming an octahedral configuration. These octahedra are sharing corners in order to provide the tri-dimensional network cohesion. The differential scanning calorimetry reveals four order-disorder reversible phase transitions located at 214, 238, 434 and 477 K. The Raman and infrared spectra confirm the presence of both cationic [(C4H9)N]+ and anionic [Bi2Cl9]3- parts. The dielectric parameters, real and imaginary dielectric permittivity (ε‧ and ε″), and dielectric loss tangent (tg δ), were measured in the frequency range of 209 kHz-5 MHz at different temperatures. The variations of dielectric dispersion (ε') and dielectric absorption (ε″) with frequency show a distribution of relaxation times, which is probably related to the change in the dynamical state of the [(C4H9)4N]+ cations and the [Bi2Cl9]3- anions.

  19. Are HO radicals produced in the reaction of O(3P) with 1-C4H8 ?

    NASA Technical Reports Server (NTRS)

    Luria, M.; Simonaitis, R.; Heicklen, J.

    1972-01-01

    The reaction of O(3P) with 1-C4H8 was examined in the presence of CO which scavenges HO radicals to produce CO2. From the CO2 quantum yield, an upper limit to the efficiency of HO production in the reaction of O(3P) with 1-C4H8 was found to be 0.020 at both 298 and 473 K.

  20. Providers issue brief: alternative providers.

    PubMed

    Rothouse, M

    1999-06-29

    Access by managed care plan enrollees, scope of practice issues and fee reimbursement by Medicaid and third parties such as insurance carriers is the engine that drives legislation recognizing alternative health care providers--chiropractors, acupuncturists, physical therapists, naturopaths, massage therapists, homeopaths, and dietitians and nutritionists. PMID:11073386

  1. Enhancement of atmospheric H2SO4 / H2O nucleation: organic oxidation products versus amines

    NASA Astrophysics Data System (ADS)

    Berndt, T.; Sipilä, M.; Stratmann, F.; Petäjä, T.; Vanhanen, J.; Mikkilä, J.; Patokoski, J.; Taipale, R.; Mauldin, R. L., III; Kulmala, M.

    2014-01-01

    Atmospheric H2SO4 / H2O nucleation influencing effects have been studied in the flow tube IfT-LFT (Institute for Tropospheric Research - Laminar Flow Tube) at 293 ± 0.5 K and a pressure of 1 bar using synthetic air as the carrier gas. The presence of a possible background amine concentration in the order of 107-108 molecule cm-3 throughout the experiments has to be taken into account. In a first set of investigations, ozonolysis of olefins (tetramethylethylene, 1-methyl-cyclohexene, α-pinene and limonene) for close to atmospheric concentrations, served as the source of OH radicals and possibly other oxidants initiating H2SO4 formation starting from SO2. The oxidant generation is inevitably associated with the formation of organic oxidation products arising from the parent olefins. These products (first generation mainly) showed no clear effect on the number of nucleated particles within a wide range of experimental conditions for H2SO4 concentrations higher than ~107 molecule cm-3. Also the early growth process of the nucleated particles was not significantly influenced by the organic oxidation products in line with the expected growth by organic products using literature data. An additional, H2SO4-independent process of particle (nano-CN) formation was observed in the case of α-pinene and limonene ozonolysis for H2SO4 concentrations smaller than ~107 molecule cm-3. Furthermore, the findings confirm the appearance of an additional oxidant for SO2 beside OH radicals, very likely stabilized Criegee Intermediates (sCI). A second set of experiments has been performed in the presence of added amines in the concentrations range of a few 107-1010 molecule cm-3 applying photolytic OH radical generation for H2SO4 production without addition of other organics. All amines showed significant nucleation enhancement with increasing efficiency in the order pyridine < aniline < dimethylamine < trimethylamine. This result supports the idea of H2SO4 cluster stabilization by

  2. Contaminant exposures at the 4H shell mounds in the Santa Barbara Channel.

    PubMed

    Phillips, Charles R; Salazar, Michael H; Salazar, Sandra M; Snyder, Barry J

    2006-12-01

    Remobilization, bioavailability, and potential toxicity of chemical contaminants were evaluated at the 4H shell mounds - the site of abandoned offshore oil and gas production platforms in the Santa Barbara Channel region of the Southern California Bight. Evaluations used a weight-of-evidence approach based on results from bulk phase chemical analyses and laboratory toxicity testing of shell mound cores, in situ field bioassays using caged mussels, and surficial sediment chemistry. Shell mound cores contained elevated concentrations of metals associated with drilling wastes (e.g., Ba, Cr, Pb, and Zn), as well as monocyclic and polycyclic aromatic hydrocarbons (PAHs). The highest concentrations along with pockets of free oil were associated with the middle "cuttings" stratum. Sediments composited from all core strata caused significant acute toxicity and bioaccumulation of Ba and PAHs in test organisms during laboratory exposures. In contrast, caged mussels placed at each of the shell mounds for a period of 57-58 days had greater than 90% survival, and there were no significant differences in survival of mussels placed at the shell mounds and corresponding reference sites. While all mussel samples exhibited increases in shell length, whole animal weight, and tissue lipid content, in some cases growth metrics for the shell mound mussels were significantly higher than those for the reference sites. Concentrations of metals, PAHs, and polychlorinated biphenyls (PCBs) in tissues of the shell mound mussels were not significantly different from those at reference sites. The presence of labile aromatic hydrocarbons in shell mound cores and absence of significant contaminant accumulation of tissues of caged mussels indicated that chemical contaminants are not being remobilized from the 4H shell mounds. Surficial bottom sediments near the shell mounds contained elevated Ba concentrations that probably were associated with drilling wastes. However, concentrations did not

  3. Leading the Pack: Dog 3--Fun Activities for You and Your Dog. 4-H Skills for Life Animal Series. National 4-H Curriculum. BU-08168

    ERIC Educational Resources Information Center

    National 4-H Council, 2005

    2005-01-01

    Experienced youth investigate responsible breeding, diseases, caring for geriatric dogs, training, service dogs, dog roles and careers related to dogs. This guide provides youth with numerous leadership opportunities. Because youth development programs help build tomorrow's leaders, leadership is a strong theme in Level 3 activities. One will be…

  4. Web Growth Used to Confine Screw Dislocations to Predetermined Lateral Positions in 4H-SiC Epilayers

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony; Neudeck, Philip G.; Spry, David J.; Trunek, Andrew J.; Beheim, Glenn M.

    2004-01-01

    cantilever coalescence point (P2). No defects (i.e., no etch pits) are observed in other cantilevered portions of the film surface. On the basis of the principle of dislocation Burgers vector conservation, we hypothesize that all vertically propagating substrate dislocations in an enclosed trench region become combined into a single dislocation in the webbed film roof at the point of final roof coalescence. The point of final roof coalescence, and therefore the lateral location of a webbed roof dislocation, can be designed into the pregrowth mesa pattern. Screw dislocations with predetermined lateral positions can then be used to provide the new growth steps necessary for growing a 4H/6H-SiC epilayer with a lower dislocation density than the substrate. Devices fabricated on top of such films can be positioned to avoid the preplaced dislocations.

  5. Identification of antisite carbon split-interstitial defects in 4H-SiC

    SciTech Connect

    Steeds, J. W.; Sullivan, W.

    2008-05-15

    A rich variety of optical centers with high energy local vibrational modes has been found in electron-irradiated 4H-SiC in both the as-irradiated and annealed states. These energies have been measured and the annealing dependence of the optical centers has been investigated by low-temperature photoluminescence spectroscopy. In view of the relatively high energies of these modes, it is anticipated that they involve carbon interstitials and a detailed correlation has therefore been undertaken, in selected cases, between the experimentally observed energies and those calculated by recent local density approximation, i.e., ab initio methods for atomic arrangements involving carbon interstitials. When satisfactory agreement has been achieved, the annealing behavior is compared to the calculated stabilities of the defects concerned. As a result, different configurations of carbon antisite defects are identified together with their spatial distributions with respect to the irradiated areas and their sequences of appearance and disappearance on annealing. These findings significantly add to the understanding of the radiation damage process and its subsequent development and recovery on annealing. Some of the optical centers that have well-defined local vibrational modes remain to be identified in the future.

  6. Surface Al doping of 4H-SiC via low temperature annealing

    NASA Astrophysics Data System (ADS)

    Park, Junbo; Kim, Ki-hwan; Park, Young-rak; Kim, Minki; Lee, Hyungseok; Jun, Chi-Hoon; Koo, Sangmo; Ko, Sang Choon

    2016-07-01

    We present a method of forming shallow p-doping on a 4H-SiC surface by depositing a thin Al layer (d = 5 nm) and then thermally annealing it at 1000 °C for 10 min. A secondary ion mass spectrometry analysis of the annealed Al/SiC sample reveals an Al concentration in excess of 1017 cm-3 up to a depth of d ≤ 250 nm. I-V measurements and CV characterizations of Ti-SiC Schottky barrier diodes (SBDs) fabricated on a n-type SiC epi-wafer indicate that the shallow Al doping increases the built-in potential of the junction and the barrier height by Δ V b i = 0.51 eV and Δ ϕ B = 0.26 eV , respectively. Assuming a rectangular doping profile, calculations of the built-in voltage shift and the Schottky barrier height indicate that partial dopant activation (activation ratio ˜2%) can induce the observed barrier height shift. The shallow doping method was then used to fabricate junction terminations in SBDs which increased the breakdown voltage and reduced the reverse leakage current. Technology CAD simulations of the SBD with and without doping verify that a reduction of peak electric field can explain the improvement of the breakdown voltage.

  7. Prediction of 4H-SiC betavoltaic microbattery characteristics based on practical Ni-63 sources.

    PubMed

    Gui, Gui; Zhang, Kan; Blanchard, James P; Ma, Zhenqiang

    2016-01-01

    We have investigated the performance of 4H-SiC betavoltaic microbatteries under exposure to the practical Ni-63 sources using the Monte Carlo method and Synopsys® Medici device simulator. A typical planar p-n junction betavoltaic device with the Ni-63 source of 20% purity on top is modeled in the simulation. The p-n junction structure includes a p+ layer, a p- layer, an n+ layer, and an n- layer. In order to obtain an accurate and valid predication, our simulations consider several practical factors, including isotope impurities, self-absorption, and full beta energy spectra. By simulating the effects of both the p-n junction configuration and the isotope source thickness on the battery output performance, we have achieved the optimal design of the device and maximum energy conversion efficiency. Our simulation results show that the energy conversion efficiency increases as the doping concentration and thickness of the p- layer increase, whereas it is independent of the total depth of the p-n junction. Furthermore, the energy conversion efficiency decreases as the thickness of the practical Ni-63 source increases, because of self-absorption in the isotope source. Therefore, we propose that a p-n junction betavoltaic cell with a thicker and heavily doped p- layer under exposure to a practical Ni-63 source with an appreciable thickness could produce the optimal energy conversion efficiency. PMID:26583261

  8. Incorporating isolated molybdenum (Mo) atoms into Bilayer Epitaxial Graphene on 4H-SiC(0001)

    NASA Astrophysics Data System (ADS)

    Huang, Han; Wan, Wen; Li, Hui; Wong, Swee Liang; Lv, Lu; Gao, Yongli; Wee, Andrew T. S.

    2014-03-01

    The atomic structures and electronic properties of isolated Mo atoms in bilayer epitaxial graphene (BLEG) on 4H-SiC(0001) are investigated by low temperature scanning tunneling microscopy (LT-STM). LT-STM results reveal that isolated Mo dopants prefer to substitute C atoms at α-sites, and preferentially locate between the graphene bilayers. First-principles calculations confirm that the embedding of single Mo dopants within BLEG is energetically favorable as compared to monolayer graphene. The calculated bandstructures show that Mo-doped BLEG is n-doped, and each Mo atom introduces a local magnetic moment of 1.81 μB. Our findings demonstrate a simple and stable method to incorporate single transition metal dopants into the graphene lattice to tune its electronic and magnetic properties for possible use in graphene spin devices. NRF-CRP (Singapore) grants R-143-000-360-281and R-144-000-295-281. ``Shenghua Professorship'' startup funding from CSU and the support from the NSF of China (Grant No.11304398).

  9. Bistable defect in mega-electron-volt proton implanted 4H silicon carbide

    NASA Astrophysics Data System (ADS)

    Martin, D. M.; Kortegaard Nielsen, H.; Lévêque, P.; Hallén, A.; Alfieri, G.; Svensson, B. G.

    2004-03-01

    Epitaxial 4H-SiC n-type layers implanted at room temperature with a low fluence of mega-electron-volt protons have been measured by deep level transient spectroscopy (DLTS). The proton fluence of 1×1012cm-2 creates an estimated initial concentration of intrinsic point defects of about 1014 cm-3 of which about 10% remain after the implantation and gives rise to deep states in the upper part of the band gap. Here, we investigate the samples prior to high-temperature annealing and a very complex spectrum is revealed. In particular, a bistable defect M is discovered having two DLTS peaks, M1 and M3 at EC-0.42 and around EC-0.75 eV, respectively, in one configuration and one peak, M2 at EC-0.70 eV in the other configuration. The charge dependent thermal activation energies for the transformation between the bistable defect peaks are 0.90 and 1.40 eV.

  10. Radiation-stimulated photoluminescence in electron irradiated 4H-SiC

    NASA Astrophysics Data System (ADS)

    Lebedev, A. A.; Ber, B. Ya; Seredova, N. V.; Kazantsev, D. Yu; Kozlovski, V. V.

    2015-12-01

    The photoluminescence (PL) arising in low doped CVD grown n- and p-type 4H-SiC upon electron irradiation (0,9 MeV) has been studied. After each doze of irradiation spectrum of PL was measured. The PL spectrum was dominated by a band peaked at hv  ≈  2,45 eV, commonly observed upon irradiation of SiC. The experiments demonstrated that, for samples with both types of conduction, the PL intensity approaches a constant value with increasing irradiation dose. A model was suggested, describing the PL characteristics in terms of the radiative recombination via a donor-acceptor pair constituted by nitrogen and a structural defect formed in the course of irradiation. Also, the concentration of nitrogen atoms was measured by the SIMS method. The experimental data were used to calculate in terms of the suggested model the dependence of the PL intensity on the irradiation dose. A good agreement between the calculated and experimental dependences was observed. A conclusion is made that the PL is activated by donor—acceptor pairs constituted by a nitrogen atom and a structural defect.

  11. Microscopic origin of the prolonged coherence in 4H-SiC divacancy spin qubits

    NASA Astrophysics Data System (ADS)

    Seo, Hosung; Falk, Abram; Klimov, Paul; Christle, David; Awschalom, David; Galli, Giulia

    Long coherence times of quantum bits (qubits) is a key prerequisite for quantum computing and quantum metrology. Recently, electronic spin qubits localized to divacancies in 4H-SiC were found to have a long spin coherence time (T2) exceeding 1 ms, which is longer than that of the nitrogen-vacancy (NV) center in chemically but not isotopically purified diamond. In this talk, we discuss the microscopic origin behind the prolonged divacancy coherence. By using optically detected magnetic resonance (ODMR), we show that the divacancy T2 rapidly increases as a function of magnetic field, saturating at 1.3 ms at T = 20 K. We used a quantum-bath model combined with a cluster correlation expansion technique to calculate the divacancy coherence function and found an excellent agreement between theory and experiment. We show that an effective decoupling of the 29Si and 13C nuclear spins due to their gyromagnetic ratio difference is one of the key reasons responsible for suppressing the decoherence of the divacancy qubits in SiC under magnetic fields larger than 100G. We gratefully acknowledge financial support from the National Science Foundation through the University of Chicago MRSEC under Award Number DMR-1420709.

  12. Electrical Characterization of High Energy Electron Irradiated Ni/4H-SiC Schottky Barrier Diodes

    NASA Astrophysics Data System (ADS)

    Paradzah, A. T.; Omotoso, E.; Legodi, M. J.; Auret, F. D.; Meyer, W. E.; Diale, M.

    2016-05-01

    The effect of high energy electron irradiation on Ni/4H-SiC Schottky barrier diodes was evaluated by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Electron irradiation was achieved by using a radioactive strontium source with peak emission energy of 2.3 MeV. Irradiation was performed in fluence steps of 4.9 × 1013 cm-2 until a total fluence of 5.4 × 1014 cm-2 was reached. The Schottky barrier height determined from I-V measurements was not significantly changed by irradiation while that obtained from C-V measurements increased with irradiation. The ideality factor was obtained before irradiation as 1.05 and this value did not significantly change as a result of irradiation. The series resistance increased from 47 Ω before irradiation to 74 Ω after a total electron fluence of 5.4 × 1014 cm-2. The net donor concentration decreased with increasing irradiation fluence from 4.6 × 1014 cm-3 to 3.0 × 1014 cm-3 from which the carrier removal rate was calculated to be 0.37 cm-1.

  13. Control of electric field in 4H-SiC UMOSFET: Physical investigation

    NASA Astrophysics Data System (ADS)

    Jozi, Mohammad; Orouji, Ali A.; Fathipour, Morteza

    2016-09-01

    In this paper, we show how breakdown voltage (VBR) and the specific on-resistance (Ron) can be improved simply by controlling of the electric field in a power 4H-SiC UMOSFET. The key idea in this work is increasing the uniformity of the electric field profile by inserting a region with a graded doping density (GD region) in the drift region. The doping density of inserted region is decreased gradually from top to bottom, called Graded Doping Region UMOSFET (GDR-UMOSFET). The GD region results in a more uniform electric field profile in comparison with a conventional UMOSFET (C-UMOSFET) and a UMOSFET with an accumulation layer (AL-UMOSFET). This in turn improves breakdown voltage. Using two-dimensional two-carrier simulation, we demonstrate that the GDR-UMOSFET shows higher breakdown voltage and lower specific on-resistance. Our results show the maximum breakdown voltage of 1340 V is obtained for the GDR-UMOSFET with 10 μm drift region length, while at the same drift region length and approximated doping density, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 V and 703 V, respectively.

  14. A novel double-recessed 4H-SiC MESFET with partly undoped space region

    NASA Astrophysics Data System (ADS)

    Orouji, Ali A.; Aminbeidokhti, Amirhossein

    2011-12-01

    In this paper, a novel double-recessed 4H-SiC metal semiconductor field effect transistor (MESFET) with partly undoped space region (DRUS-MESFET) is introduced. The key idea in this work is to improve the DC and RF characteristics of the device by introducing an undoped space region. Using two-dimensional and two-carrier device simulation, we demonstrate that breakdown voltage ( VBR) increases from 109 V in conventional double recessed MESFET (DR-MESFET) structure to 144.5 V in the DRUS-MESFET structure due to the modified channel electric field distribution of the proposed structure. The maximum output power density of the DRUS-MESFET structure is about 25.4% larger than that of the DR-MESFET structure. Furthermore, lower gate-drain capacitance ( CGD), higher cut-off frequency ( fT), larger maximum available gain (MAG), and higher maximum oscillation frequency ( fmax) are achieved for the DRUS-MESFET structure. The results show that the fmax and fT of the proposed structure improve 95.6% and 13.07% respectively, compared with that of the DR-MESFET structure. Also, the MAG of the DRUS-MESET is 4.5 dB higher than that of the DR-MESFET structure at 40 GHz. The results show that the DRUS-MESFET structure has superior electrical characteristics and performances in comparison with the DR-MESFET structure.

  15. Raman spectra of the different phases in the CaSO4-H2O system.

    PubMed

    Prieto-Taboada, Nagore; Gómez-Laserna, Olivia; Martínez-Arkarazo, Irantzu; Olazabal, María Ángeles; Madariaga, Juan Manuel

    2014-10-21

    Although it is known that the CaSO4/H2O system is formed by at least five different phases, this fact is not correctly documented in Raman spectroscopy studies. The main problem detected in the literature was the incorrect definition of the anhydrite, which produced the assignation of different spectra for a single compound. In this sense, two different spectra were clearly identified from the bibliography, which showed different main Raman bands at 1017 or 1025 cm(-1), although anhydrite could be present even as three different polymorphous species with different structures. A better understanding of the whole system obtained from a review of the literature allowed new conclusions to be established. Thanks to that revision and the development of different thermodynamical experiments by Raman spectroscopy, the Raman spectra of each phase were successfully identified for the first time. In this way, the main Raman bands of gypsum, bassanite, anhydrite III, anhydrite II and anhydrite I were identified at 1008, 1015, 1025, 1017 and 1017 cm(-1), respectively. To conclude this work, the contradictions found in literature were critically summarized. PMID:25226433

  16. Dissociation of deuterium-defect complexes in ion-implanted epitaxial 4H-SiC

    SciTech Connect

    Janson, M.; Linnarsson, M.K.; Hallen, A.; Svensson, B.G.

    1998-12-31

    Epitaxial layers of low doped 4H-SiC are implanted with 20 keV {sup 2}H{sup +} ions to a dose of 1 {times} 10{sup 15} cm{sup {minus}2}. The samples are subsequently annealed at temperatures ranging from 1040 to 1135 C. Secondary ion mass spectrometry is used to obtain the concentration versus depth profiles of the atomic deuterium in the samples. It is found that the concentration of implanted deuterium decreases rapidly in the samples as a function of anneal time. The experimental data are explained by a model where the deuterium migrates rapidly and becomes trapped and de-trapped at implantation-induced defects which exhibit a slightly shallower depth distribution than the implanted deuterium ions. Computer simulations using this model, in which the damage profile is taken from Monte Carlo simulations and the surface is treated as a perfect sink for the diffusing deuterium atoms, are performed with good results compared to the experimental data. The complexes are tentatively identified as carbon-deuterium at a Si-vacancy and a dissociation energy (E{sub D}) of approximately 4.9 eV is extracted for the deuterium-vacancy complexes.

  17. Synthesis, molecular docking and biological evaluation of new steroidal 4H-pyrans

    NASA Astrophysics Data System (ADS)

    Uzzaman, Shams; Dar, Ayaz Mahmood; Sohail, Aamir; Bhat, Sheraz; mustafa, Mir Faisal; Khan, Yusuf

    2014-01-01

    A series of new steroidal 4H-pyrans (4-6) have been synthesized from steroidal α, β-unsaturated ketones (1-3). The products (4-6) were characterized by IR, 1H NMR, 13C NMR, MS and analytical data. The interaction studies of compounds (4-6) with DNA were carried out by employing gel electrophoresis, UV-vis and fluorescence spectroscopy. The gel electrophoresis pattern revealed that compounds (4-6) bind to DNA and also demonstrated that the compound 6 alone or in presence of Cu (II) causes the nicking of supercoiled pBR322. The compounds 4 and 5 bind to DNA preferentially through electrostatic and hydrophobic interactions with Kb values found to be 5.3 × 103 and 3.7 × 103 M-1, respectively, indicating the higher binding affinity of compound 4 towards DNA. The docking study suggested the intercalation of compounds in between the nucleotide base pairs. The cytotoxicity and genotoxicity of the newly synthesized compounds were checked by MTT and comet assay, respectively during which compound 6 showed potential behaviour.

  18. Homoepitaxy of 6H and 4H SiC on nonplanar substrates

    SciTech Connect

    Nordell, N.; Karlsson, S.; Konstantinov, A.O.

    1998-01-01

    Growth by vapor phase epitaxy around stripe mesas and in trenches formed by reactive ion etch on 6H and 4H SiC substrates has been investigated. The mesas were aligned with the low index {l_angle}11{bar 2}0{r_angle} and {l_angle}1{bar 1}00{r_angle} directions, as well as with the high index {l_angle}1,1+{radical}(3),{ovr 2+{radical}(3)},0{r_angle} directions, in order to reveal and study the growth habit. It was found that a low C:Si ratio gave a smooth growth and small differences in growth rate between lattice planes. A larger C:Si ratio gave more faceted growth, both limited by surface kinetics and surface diffusion, and the growth rate was 10{percent} lower in the [1{bar 1}00] direction and 10{percent} higher in the [11{bar 2}0] direction, than on the substrate. Growth on mesas oriented parallel to the substrate off-orientation shows clear step-flow growth, while growth on mesas oriented perpendicular to the off-orientation reveals the singular (0001) plane, where islands are observed, which might indicate Stranski{endash}Krastanov growth. {copyright} {ital 1998 American Institute of Physics.}

  19. Silicon vacancy center in 4 H -SiC: Electronic structure and spin-photon interfaces

    NASA Astrophysics Data System (ADS)

    Soykal, Ö. O.; Dev, Pratibha; Economou, Sophia E.

    2016-02-01

    Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties and technological maturity. We calculate the multiparticle symmetry-adapted wave functions of the negatively charged silicon vacancy defect in hexagonal silicon carbide via use of group theory and density functional theory and find the effects of spin-orbit and spin-spin interactions on these states. Although we focused on VSi- in 4 H -SiC because of its unique fine structure due to the odd number of active electrons, our methods can be easily applied to other defect centers of different polytypes, especially to the 6 H -SiC. Based on these results, we identify the mechanism that polarizes the spin under optical drive, obtain the ordering of its dark doublet states, point out a path for electric field or strain sensing, and find the theoretical value of its ground-state zero-field splitting to be 68 MHz, in good agreement with experiment. Moreover, we present two distinct protocols of a spin-photon interface based on this defect. Our results pave the way toward quantum information and quantum metrology applications with silicon carbide.

  20. Influence of growth pressure on filling 4H-SiC trenches by CVD method

    NASA Astrophysics Data System (ADS)

    Ji, Shiyang; Kojima, Kazutoshi; Kosugi, Ryoji; Saito, Shingo; Sakuma, Yuuki; Tanaka, Yasunori; Yoshida, Sadafumi; Himi, Hiroaki; Okumura, Hajime

    2016-01-01

    To construct a superjunction structure consisting of p/n columns, narrow stripe-shaped trenches (∼1.5 µm wide and ∼4.7 µm deep) preformed on an n+ 4H-SiC substrate were filled by the hot-wall CVD method using a conventional gas reaction system, SiH4:C3H8:H2. The influences of growth pressure on the coverage distribution of epilayers and the corresponding filling efficiency (the thickness ratio of epilayers on trench bottom and mesa top) were investigated. Two benefits of increasing the growth pressure from 10 to 38 kPa were found: one is the reduced growth around the mesa surface, which lessens the risk of void formation; the other is a high filling rate as well as an improved filling efficiency up to ∼7. By supplying source gases at high flow rates, a void-free trench filling with a filling rate of ∼1.3 µm/h was successfully achieved at 38 kPa.

  1. The effect of irradiation with high-energy protons on 4H-SiC detectors

    SciTech Connect

    Kazukauskas, V. Jasiulionis, R.; Kalendra, V.; Vaitkus, J.-V.

    2007-03-15

    The effect of irradiation of 4H-SiC ionizing-radiation detectors with various doses (as high as 10{sup 16} cm{sup -2}) of 24-GeV protons is studied. Isotopes of B, Be, Li, He, and H were produced in the nuclear spallation reactions of protons with carbon. Isotopes of Al, Mg, Na, Ne, F, O, and N were produced in the reactions of protons with silicon. The total amount of the produced stable isotopes varied in proportion with the radiation dose from 1.2 x 10{sup 11} to 5.9 x 10{sup 13} cm{sup -2}. It is shown that, at high radiation doses, the contact characteristics of the detectors change appreciably. The potential-barrier height increased from the initial value of 0.7-0.75 eV to 0.85 eV; the rectifying characteristics of the Schottky contacts deteriorated appreciably. These effects are attributed to the formation of a disordered structure of the material as a result of irradiation.

  2. Damage accumulation and defect relaxation in 4H-SiC

    NASA Astrophysics Data System (ADS)

    Zhang, Y.; Gao, F.; Jiang, W.; McCready, D. E.; Weber, W. J.

    2004-09-01

    A nonlinear dependence of damage disorder on dose is observed for both Si and C sublattices in 4H-SiC under 2MeV Au irradiation at 165K . The relative disorder observed along the ⟨4¯403¯⟩ direction is much higher than that along the ⟨0001⟩ direction. Molecular dynamics (MD) simulations demonstrate that most interstitial configurations are formed on the Si-C dimer rows that are parallel to the ⟨0001⟩ direction. As a result, these interstitials are shielded by the Si and C atoms on the lattice sites, which significantly reduces the contribution of these interstitials to the backscattering/reaction yield along the ⟨0001⟩ direction. During isochronal annealing below room temperature, the relative disorder decreases along the ⟨0001⟩ direction, as expected; however, the disorder is stable on the Si sublattice and increases slightly on the C sublattice when measured along the ⟨4¯403¯⟩ direction due to relaxation of some metastable defects to lower energy configurations. As the annealing temperature increases, similar recovery behavior on both Si and C sublattices along the ⟨0001⟩ direction indicates coupling of Si and C recovery processes; however, slightly higher recovery temperatures on the C sublattice along the ⟨4¯403¯⟩ direction suggests some decoupling of the Si and C recovery processes. Based on the structures and energetics of defects from MD simulations, new insights into defect configurations and relaxation processes are described.

  3. Plasma Etching of n-Type 4H-SiC for Photoconductive Semiconductor Switch Applications

    NASA Astrophysics Data System (ADS)

    Ekinci, Huseyin; Kuryatkov, Vladimir V.; Mauch, Daniel L.; Dickens, James C.; Nikishin, Sergey A.

    2015-05-01

    Photoconductive semiconductor switches (PCSS) fabricated on high-purity semi-insulating 4H-SiC substrates (000) are capable of switching high currents in compact packages with long device lifetimes. A heavily doped n-type SiC epitaxial layer of appropriate thickness is required to form low-resistance ohmic contacts with these devices. In addition, to enhance the performance of the PCSSs, the SiC surface between the ohmic contacts must be extremely smooth. We report a chlorine-based, inductively coupled plasma reactive ion-etching process yielding n-type SiC epitaxial layers with the required smoothness. The rate of etching and post-etching surface morphology were dependent on plasma conditions. We found that the surface smoothness of epitaxial layers can be improved by including BCl3 in the argon-chlorine mixture. The optimum etching process yielded very smooth surfaces (˜0.3 nm RMS) at a relatively high rate of etching of ˜220 nm/min. This new fabrication approach significantly reduced the on-state resistance of the PCSS device and improved its durability of operation.

  4. Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode

    NASA Astrophysics Data System (ADS)

    Chen, Feng-Ping; Zhang, Yu-Ming; Zhang, Yi-Men; Tang, Xiao-Yan; Wang, Yue-Hu; Chen, Wen-Hao

    2011-11-01

    The 4H-SiC junction barrier Schottky (JBS) diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μ P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ·cm2. A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm2 under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 °C-200 °C. The diode shows a stable Schottky barrier height of up to 200 °C and a stable operation under a continuous forward current of 100 A/cm2.

  5. Si/C and H coadsorption at 4H-SiC{0001} surfaces

    NASA Astrophysics Data System (ADS)

    Wachowicz, E.

    2016-06-01

    Density functional theory (DFT) study of adsorption of 0.25 monolayer of either Si or C on 4H-SiC{0001} surfaces is presented. The adsorption in high-symmetry sites on both Si- and C-terminated surfaces was examined and the influence of the preadsorbed 0.25 ML of hydrogen on the Si/C adsorption was considered. It was found out that for Si on C-terminated surface and C on Si-terminated the most favourable is threefolded adsorption site on both clean and H-precovered surface. This is contrary to the bulk crystal stacking order which would require adsorption on top of the topmost surface atom. In those cases, the presence of hydrogen weakens the bonding of the adsorbate. Carbon on the C-terminated surface, only binds on-top of the surface atom. The Csbnd C bond-length is almost the same for the clean surface and for one with H and equals to ∼1.33 Å which is shorter by ∼0.2 than in diamond. The analysis of the electronic structure changes under adsorption is also presented.

  6. Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC

    NASA Astrophysics Data System (ADS)

    Vivona, M.; Greco, G.; Lo Nigro, R.; Bongiorno, C.; Roccaforte, F.

    2015-07-01

    In this work, the morphological, structural, and electrical properties of Ti/Al/W contacts to p-type implanted silicon carbide (4H-SiC) have been monitored as a function of the annealing temperature (800-1100 °C). The increase of the annealing temperature induces a transition from a rectifying to an Ohmic behavior, with a specific contact resistance of 5.8 × 10-4 Ωcm2. The electrical behavior has been correlated with the morphological and structural analyses. In particular, the transition to an Ohmic behavior was accompanied by a gradual increase of the surface roughness and by the occurrence of a reaction leading to the formation of new phases in the stack and at the interface (TiAl3, W(SiAl)2, and TiC). The presence of Al-rich protrusions penetrating in the SiC substrate was also observed. From the temperature dependence of the electrical parameters, a barrier height of 0.69 eV for this system was determined. The thermal stability of the contacts has been demonstrated for long-term (up to 100 h) thermal cycling at 400 °C.

  7. Discovery and analysis of 4H-pyridopyrimidines, a class of selective bacterial protein synthesis inhibitors.

    PubMed

    Ribble, Wendy; Hill, Walter E; Ochsner, Urs A; Jarvis, Thale C; Guiles, Joseph W; Janjic, Nebojsa; Bullard, James M

    2010-11-01

    Bacterial protein synthesis is the target for numerous natural and synthetic antibacterial agents. We have developed a poly(U) mRNA-directed aminoacylation/translation protein synthesis system composed of phenyl-tRNA synthetases, ribosomes, and ribosomal factors from Escherichia coli. This system, utilizing purified components, has been used for high-throughput screening of a small-molecule chemical library. We have identified a series of compounds that inhibit protein synthesis with 50% inhibitory concentrations (IC(50)s) ranging from 3 to 14 μM. This series of compounds all contained the same central scaffold composed of tetrahydropyrido[4,3-d]pyrimidin-4-ol (e.g., 4H-pyridopyrimidine). All analogs contained an ortho pyridine ring attached to the central scaffold in the 2 position and either a five- or a six-member ring tethered to the 6-methylene nitrogen atom of the central scaffold. These compounds inhibited the growth of E. coli, Staphylococcus aureus, Streptococcus pneumoniae, Haemophilus influenzae, and Moraxella catarrhalis, with MICs ranging from 0.25 to 32 μg/ml. Macromolecular synthesis (MMS) assays with E. coli and S. aureus confirmed that antibacterial activity resulted from specific inhibition of protein synthesis. Assays were developed for the steps performed by each component of the system in order to ascertain the target of the compounds, and the ribosome was found to be the site of inhibition. PMID:20696870

  8. Electrical Characterization of High Energy Electron Irradiated Ni/4 H-SiC Schottky Barrier Diodes

    NASA Astrophysics Data System (ADS)

    Paradzah, A. T.; Omotoso, E.; Legodi, M. J.; Auret, F. D.; Meyer, W. E.; Diale, M.

    2016-08-01

    The effect of high energy electron irradiation on Ni/4 H-SiC Schottky barrier diodes was evaluated by current-voltage ( I- V) and capacitance-voltage ( C- V) measurements at room temperature. Electron irradiation was achieved by using a radioactive strontium source with peak emission energy of 2.3 MeV. Irradiation was performed in fluence steps of 4.9 × 1013 cm-2 until a total fluence of 5.4 × 1014 cm-2 was reached. The Schottky barrier height determined from I- V measurements was not significantly changed by irradiation while that obtained from C- V measurements increased with irradiation. The ideality factor was obtained before irradiation as 1.05 and this value did not significantly change as a result of irradiation. The series resistance increased from 47 Ω before irradiation to 74 Ω after a total electron fluence of 5.4 × 1014 cm-2. The net donor concentration decreased with increasing irradiation fluence from 4.6 × 1014 cm-3 to 3.0 × 1014 cm-3 from which the carrier removal rate was calculated to be 0.37 cm-1.

  9. Characterization of the carrot defect in 4H-SiC epitaxial layers

    NASA Astrophysics Data System (ADS)

    Hassan, J.; Henry, A.; McNally, P. J.; Bergman, J. P.

    2010-05-01

    Characterization of the epitaxial defect known as the carrot defect was performed in thick 4H-SiC epilayers. A large number of carrot defects have been studied using different experimental techniques such as Nomarski optical microscopy, KOH etching, cathodoluminescence and synchrotron white beam X-ray topography. This has revealed that carrot defects appear in many different shapes and structures in the epilayers. Our results support the previous assignment of the carrot defect as related to a prismatic stacking fault. However, we have observed carrot defects with and without a visible threading dislocation related etch pit in the head region, after KOH etching. Polishing of epilayers in a few μm steps in combination with etching in molten KOH and imaging using Nomarski optical microscope has been used to find the geometry and origin of the carrot defects in different epilayers. The defects were found to originate both at the epi-substrate interface and during the epitaxial growth. Different sources of the carrot defect have been observed at the epi-substrate interface, which result in different structures and surfaces appearance of the defect in the epilayer. Furthermore, termination of the carrot defect inside the epilayer and the influence of substrate surface damage and growth conditions on the density of carrot defects are studied.

  10. Nitrogen doping of chemical vapor deposition grown graphene on 4H-SiC (0001)

    SciTech Connect

    Urban, J. M.; Binder, J.; Wysmołek, A.; Dąbrowski, P.; Strupiński, W.; Kopciuszyński, M.; Jałochowski, M.; Klusek, Z.

    2014-06-21

    We present optical, electrical, and structural properties of nitrogen-doped graphene grown on the Si face of 4H-SiC (0001) by chemical vapor deposition method using propane as the carbon precursor and N{sub 2} as the nitrogen source. The incorporation of nitrogen in the carbon lattice was confirmed by X-ray photoelectron spectroscopy. Angle-resolved photoemission spectroscopy shows carrier behavior characteristic for massless Dirac fermions and confirms the presence of a graphene monolayer in the investigated nitrogen-doped samples. The structural and electronic properties of the material were investigated by Raman spectroscopy. A systematical analysis of the graphene Raman spectra, including D, G, and 2D bands, was performed. In the case of nitrogen-doped samples, an electron concentration on the order of 5–10 × 10{sup 12} cm{sup −2} was estimated based upon Raman and Hall effect measurements and no clear dependence of the carrier concentration on nitrogen concentration used during growth was observed. This high electron concentration can be interpreted as both due to the presence of nitrogen in graphitic-like positions of the graphene lattice as well as to the interaction with the substrate. A greater intensity of the Raman D band and increased inhomogeneity, as well as decreased electron mobility, observed for nitrogen-doped samples, indicate the formation of defects and a modification of the growth process induced by nitrogen doping.

  11. From the Au nano-clusters to the nanoparticles on 4H-SiC (0001).

    PubMed

    Li, Ming-Yu; Zhang, Quanzhen; Pandey, Puran; Sui, Mao; Kim, Eun-Soo; Lee, Jihoon

    2015-01-01

    The control over the configuration, size, and density of Au nanoparticles (NPs) has offered a promising route to control the spatial confinement of electrons and photons, as a result, Au NPs with a various configuration, size and density are witnessed in numerous applications. In this work, we investigate the evolution of self-assembled Au nanostructures on 4H-SiC (0001) by the systematic variation of annealing temperature (AT) with several deposition amount (DA). With the relatively high DAs (8 and 15 nm), depending on the AT variation, the surface morphology drastically evolve in two distinctive phases, i.e. (I) irregular nano-mounds and (II) hexagonal nano-crystals. The thermal energy activates adatoms to aggregate resulting in the formation of self-assembled irregular Au nano-mounds based on diffusion limited agglomeration at comparatively low annealing temperature, which is also accompanied with the formations of hillocks and granules due to the dewetting of Au films and surface reordering. At high temperature, hexagonal Au nano-crystals form with facets along {111} and {100} likely due to anisotropic distribution of surface energy induced by the increased volume of NPs. With the small DA (3 nm), only dome shaped Au NPs are fabricated along with the variation of AT from low to elevated temperature. PMID:26354098

  12. 4H-SiC epitaxial layer growth by trichlorosilane (TCS)

    NASA Astrophysics Data System (ADS)

    La Via, F.; Izzo, G.; Mauceri, M.; Pistone, G.; Condorelli, G.; Perdicaro, L.; Abbondanza, G.; Calcagno, L.; Foti, G.; Crippa, D.

    2008-12-01

    The growth rate of 4H-SiC epilayers has been increased up to 100 μm/h with the use of trichlorosilane instead of silane as the silicon precursor. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Schottky diodes, manufactured on the epitaxial layer grown with trichlorosilane at 1600 °C, have higher yield and lower defect density in comparison to diodes realized on epilayers grown with the standard epitaxial process. Both very low (<10 13/cm 3) and very high (˜10 19/cm 3) doping levels have been reached with this process. The interface between very high and low doped regions is on the order of 30-50 nm. Very thick (>100 μm) epitaxial layer has been grown and the Schottky diodes realized on these layers with a good yield (>87%). This process gives the opportunity to realize very high-power devices with breakdown voltages in the range of 10 kV with a low cost SiC epitaxy process.

  13. From the Au nano-clusters to the nanoparticles on 4H-SiC (0001)

    NASA Astrophysics Data System (ADS)

    Li, Ming-Yu; Zhang, Quanzhen; Pandey, Puran; Sui, Mao; Kim, Eun-Soo; Lee, Jihoon

    2015-09-01

    The control over the configuration, size, and density of Au nanoparticles (NPs) has offered a promising route to control the spatial confinement of electrons and photons, as a result, Au NPs with a various configuration, size and density are witnessed in numerous applications. In this work, we investigate the evolution of self-assembled Au nanostructures on 4H-SiC (0001) by the systematic variation of annealing temperature (AT) with several deposition amount (DA). With the relatively high DAs (8 and 15 nm), depending on the AT variation, the surface morphology drastically evolve in two distinctive phases, i.e. (I) irregular nano-mounds and (II) hexagonal nano-crystals. The thermal energy activates adatoms to aggregate resulting in the formation of self-assembled irregular Au nano-mounds based on diffusion limited agglomeration at comparatively low annealing temperature, which is also accompanied with the formations of hillocks and granules due to the dewetting of Au films and surface reordering. At high temperature, hexagonal Au nano-crystals form with facets along {111} and {100} likely due to anisotropic distribution of surface energy induced by the increased volume of NPs. With the small DA (3 nm), only dome shaped Au NPs are fabricated along with the variation of AT from low to elevated temperature.

  14. From the Au nano-clusters to the nanoparticles on 4H-SiC (0001)

    PubMed Central

    Li, Ming-Yu; Zhang, Quanzhen; Pandey, Puran; Sui, Mao; Kim, Eun-Soo; Lee, Jihoon

    2015-01-01

    The control over the configuration, size, and density of Au nanoparticles (NPs) has offered a promising route to control the spatial confinement of electrons and photons, as a result, Au NPs with a various configuration, size and density are witnessed in numerous applications. In this work, we investigate the evolution of self-assembled Au nanostructures on 4H-SiC (0001) by the systematic variation of annealing temperature (AT) with several deposition amount (DA). With the relatively high DAs (8 and 15 nm), depending on the AT variation, the surface morphology drastically evolve in two distinctive phases, i.e. (I) irregular nano-mounds and (II) hexagonal nano-crystals. The thermal energy activates adatoms to aggregate resulting in the formation of self-assembled irregular Au nano-mounds based on diffusion limited agglomeration at comparatively low annealing temperature, which is also accompanied with the formations of hillocks and granules due to the dewetting of Au films and surface reordering. At high temperature, hexagonal Au nano-crystals form with facets along {111} and {100} likely due to anisotropic distribution of surface energy induced by the increased volume of NPs. With the small DA (3 nm), only dome shaped Au NPs are fabricated along with the variation of AT from low to elevated temperature. PMID:26354098

  15. Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD

    NASA Astrophysics Data System (ADS)

    Guoguo, Yan; Feng, Zhang; Yingxi, Niu; Fei, Yang; Xingfang, Liu; Lei, Wang; Wanshun, Zhao; Guosheng, Sun; Yiping, Zeng

    2016-06-01

    Chloride-based fast homoepitaxial growth of 4H-SiC epilayers was performed on 4° off-axis 4H-SiC substrates in a home-made vertical hot-wall chemical vapor deposition (CVD) system using H2‑SiH4‑C2H4‑HCl. The effect of the SiH4/H2 ratio and reactor pressure on the growth rate of 4H-SiC epilayers has been studied successively. The growth rate increase in proportion to the SiH4/H2 ratio and the influence mechanism of chlorine has been investigated. With the reactor pressure increasing from 40 to 100 Torr, the growth rate increased to 52 μm/hand then decreased to 47 μm/h, which is due to the joint effect of H2 and HCl etching as well as the formation of Si clusters at higher reactor pressure. The surface root mean square (RMS) roughness keeps around 1 nm with the growth rate increasing to 49 μm/h. The scanning electron microscope (SEM), Raman spectroscopy and X-ray diffraction (XRD) demonstrate that 96.7 μm thick 4H-SiC layers of good uniformity in thickness and doping with high crystal quality can be achieved. These results prove that chloride-based fast epitaxy is an advanced growth technique for 4H-SiC homoepitaxy. Project supported by the National High Technology R&D Program of China (No. 2014AA041402), the National Natural Science Foundation of China (Nos. 61474113, 61274007, 61574140), the Beijing Natural Science Foundation of China (Nos. 4132076, 4132074), the Program of State Grid Smart Grid Research Institute (No. SGRI-WD-71-14-004), and the Youth Innovation Promotion Association of CAS.

  16. Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Huang, Wei; Dudley, Michael; Fazi, Christian

    1998-01-01

    It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vectors greater than or equal to 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = 1c with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. While not nearly as detrimental to SiC device performance as micropipes, it has recently been demonstrated that elementary screw dislocations somewhat degrade the reverse leakage and breakdown properties of 4H-SiC p(+)n diodes. Diodes containing elementary screw dislocations exhibited a 5% to 35% reduction in breakdown voltage, higher pre-breakdown reverse leakage current, softer reverse breakdown I-V knee, and microplasmic breakdown current filaments that were non-catastrophic as measured under high series resistance biasing. This paper details continuing experimental and theoretical investigations into the electrical properties of 4H-SiC elementary screw dislocations. The nonuniform breakdown behavior of 4H-SiC p'n junctions containing elementary screw dislocations exhibits interesting physical parallels with nonuniform breakdown phenomena previously observed in other semiconductor materials. Based upon experimentally observed dislocation-assisted breakdown, a re-assessment of well-known physical models relating power device reliability to junction breakdown has been undertaken for 4H-SiC. The potential impact of these elementary screw dislocation defects on the performance and reliability of various 4H-SiC device technologies being developed for high-power applications will be discussed.

  17. Enhancement of atmospheric H2SO4/H2O nucleation: organic oxidation products versus amines

    NASA Astrophysics Data System (ADS)

    Berndt, T.; Sipilä, M.; Stratmann, F.; Petäjä, T.; Vanhanen, J.; Mikkilä, J.; Patokoski, J.; Taipale, R.; Mauldin, R. Lee, III; Kulmala, M.

    2013-06-01

    Atmospheric H2SO4/H2O nucleation influencing effects have been studied in the flow tube IfT-LFT (Institute for Tropospheric Research - Laminar Flow Tube) at 293 ± 0.5 K and a pressure of 1 bar using synthetic air as the carrier gas. The presence of a~possible background amine concentration in the order of 107-108 molecule cm-3 throughout the experiments has to be taken into account. In a first set of investigations, ozonolysis of olefins (tetramethylethylene, 1-methyl-cyclohexene, α-pinene and limonene) for close to atmospheric concentrations, served as the source of OH radicals and possibly other oxidants initiating H2SO4 formation starting from SO2. The oxidant generation is inevitably associated with the formation of a series of organic oxidation products arising from the parent olefins. These products (first generation mainly) showed no clear effect on the number of nucleated particles within a wide range of experimental conditions for H2SO4 concentrations higher than ~107 molecule cm-3. A comparison of the results of two different particle counters (50% cut-off size: about 1.5 nm or 2.5-3 nm) suggested that the early growth process of the nucleated particles was not significantly influenced by the organic oxidation products. An additional, H2SO4-independent process of particle (nano-CN) formation was observed in the case of α-pinene and limonene ozonolysis for H2SO4 concentrations smaller than ~10 7 molecule cm-3. Furthermore, the findings confirm the existence of an additional oxidant for SO2 beside OH radicals, very likely stabilized Criegee Intermediate (sCI). In the case of the ozonolysis of tetramethylethylene, the H2SO4 measurements in the absence and presence of an OH radical scavenger were well described by modelling using recently obtained kinetic data for the sCI reactivity in this system. A second set of experiments has been performed in the presence of added amines (trimethylamine, dimethylamine, aniline and pyridine) in the concentration range

  18. Synthesis and antifungal activity of 2H-1,4-benzoxazin-3(4H)-one derivatives.

    PubMed

    Śmist, Małgorzata; Kwiecień, Halina; Krawczyk, Maria

    2016-06-01

    A series of 2-alkyl-2H-1,4-benzoxazin-3(4H)-ones (4a-l) was easily synthesized by two-step process involving O-alkylation of 2-nitrophenols with methyl 2-bromoalkanoates and next "green" catalytic reductive cyclization of the obtained 2-nitro ester intermediates (3a-l). Further, 6,7-dibromo (5a-c) and N-acetyl (6) derivatives were prepared by bromination and acetylation of unsubstituted 2-alkyl-2H-1,4-benzoxazin-3(4H)-ones (4a-c). The novel compounds (3a-l, 4d-l, 5a-c and 6) were fully characterized by spectroscopic methods (MS, (1)H and (13)C NMR). 2-Alkyl-2H-1,4-benzoxazin-3(4H)-ones (4a-l, 5a-c and 6) were screened for antifungal activity. Preliminary assays were performed using two methods: in vitro against seven phytopathogenic fungi-Botrytis cinerea, Phythophtora cactorum, Rhizoctonia solani, Phoma betae, Fusarium culmorum, Fusarium oxysporum and Alternaria alternata-and in vivo against barley powdery mildew Blumeria graminis. The tested compounds displayed moderate to good antifungal activity at high concentration (200 mg L(-1)). The most potent compounds were 2-ethyl-2H-1,4-benzoxazin-3(4H)-one (4a), 2-ethyl-7-fluoro-2H-1,4-benzoxazin-3(4H)-one (4g) and 4-acetyl-2-ethyl-2H-1,4-benzoxazin-3(4H)-one (6), which completely inhibited the mycelial growth of seven agricultural fungi at the concentration of 200 mg L(-1) in the in vitro tests. Moreover, 2-ethyl-2H-1,4-benzoxazin-3(4H)-one (4a) and 4-acetyl-2-ethyl-2H-1,4-benzoxazin-3(4H)-one (6) were also screened for antifungal activity at concentrations of 100 mg L(-1) and 20 mg L(-1). In the concentration of 100 mg L(-1), the N-acetyl derivative (6) completely inhibited the growth of three strains of fungi (F. culmorum, P. cactorum and R. solani), while 2-ethyl-2H-1,4-benzoxazin-3(4H)-one (4a) completely inhibited only R. solani strain. At the concentration of 20 mg L(-1), compound 6 showed good activity only against P. cactorum strain (72%). PMID:26963527

  19. Step-controlled homoepitaxial growth of 4H-SiC on vicinal substrates

    NASA Astrophysics Data System (ADS)

    Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Thomas, Bernd

    2013-10-01

    A comprehensive study on the step-controlled homoepitaxial growth on the (0001)Si-face of vicinal 4H-SiC substrates was performed in order to establish epitaxial growth on 2° towards <112bar0> off-cut substrates and 4° towards <11bar00> off-cut substrates. A standard epitaxial growth process was developed by optimizing the growth temperature T, Si/H ratio and C/Si ratio for growth on 4° towards <112bar0> off-cut substrates. Thereby, step-controlled epitaxial growth was achieved within a broad operating window. The surface roughness of such epilayers varies typically between rms=0.5 nm and rms=2.5 nm and step-controlled growth is conserved even at a growth rate of 27 μm/h. Then, the standard growth process was applied to substrates with different off-cut angles α of 2°, 4° and 8° as well as with different off-cut directions <112bar0> and <11bar00>. The step-controlled growth was achieved also within a wide range of Si/H ratio and C/Si ratio for growth on 8° and 4° off-cut substrates, but the process window narrows strongly for growth on 2° off-cut substrates. The epilayers' surface roughness increases with decreasing off-cut angle of the substrate. Epilayers grown on 4° towards <11bar00> off-cut substrates were significantly smoother than epilayers grown on 4° towards <112bar0> off-cut substrates. No influence of the substrates' off-cut angle and direction on the growth rate was found. The experimental results of this comprehensive study are discussed globally in consideration of other relevant publications.

  20. Monoamine oxidase inhibitory activity of 2-aryl-4H-chromen-4-ones.

    PubMed

    Nayak, Badavath Vishnu; Ciftci-Yabanoglu, S; Bhakat, Soumendranath; Timiri, Ajay Kumar; Sinha, Barij N; Ucar, G; Soliman, Mahmoud E S; Jayaprakash, Venkatesan

    2015-02-01

    A series of twenty 2-aryl-4H-chromen-4-one (flavones) derivatives (3a-3s) were synthesized and tested for hMAO inhibitory activity. Fifteen compounds (3a, 3c, 3e-3h, 3j-3p, 3r, 3s) were found to be selective towards MAO-B, while 3d was selective towards MAO-A, and 3b, 3i and 3q were non-selective. Experimental Selectivity Index for MAO-B ranges from 2.0 (3g, 3p) to 30.0 (3j). Compound 3j, which is carrying 3,4-di-OMeC6H3 groups at R position on the molecule, was found to be potent MAO-B inhibitor amongst the fifteen with Ki value for MAO-B of 0.16±0.01 μM comparable to that of standard drug, Selegiline (Ki for MAO-B is 0.16±0.01 μM). Compound 3j also appeared as the most selective MAO-B inhibitor according to its best selectivity index (30.0), which is comparable to that of Selegiline (SIMAO-B=35.0). Molecular docking and molecular dynamics simulation studies were carried out using Autodock-4.0 and Amber12 to understand the molecular level interaction and energy relation of MAO isoforms with selective inhibitors (3d and 3j). Simulation results are in good agreement with the experimental results. Leads identified may further be explored to develop potent isoform specific inhibitors of MAO. PMID:25506816

  1. Quantum chemical study of ternary mixtures of: HNO3:H2SO4:H2O

    NASA Astrophysics Data System (ADS)

    Verdes, M. A.; Gómez, P. C.; Gálvez, O.

    2009-04-01

    Water, nitric acid and sulfuric acid are important atmospheric species as individual species and as hydrogen-bonded aggregates involved in many physical-chemical processes both superficial and bulk. The importance of heterogeneous chemical reactions taking place on ice surfaces, either solid water or solid water plus nitric or sulfuric acid, is well established now in relation to the ozone-depleting mechanisms. Also the importance of liquid droplets formed by HNO3.H2SO4.H2O as components of PSC was soon recognized [1-3]. Finally the physical properties of finely divided aqueous systems is an interesting and active field of research in which theoretical information on the microphysical domain systems may help to understand and rationalize the wealth of experimental information. This can also be the initial step in the study of more complex mixtures with higher amounts of water or variable proportions of their constituents. This kind of calculations have been successfully performed in the past[4]. We present here our results on the structure and spectroscopic and thermodynamic properties of the energy-lowest lying structures among those thermodynamically stable formed by linking the acids plus water. The calculations have been carried out by means of DFT methods (in particular the successful B3LYP) using different basis sets that contain appropriate sets of polarization and diffuse functions up to quadruple-Z quality (Dunninǵs aug-cc-pVQZ). Careful assessment of the dependability of the methodology used has been carried out. This work has been supported by the Spanish Ministry of Education, Projects FIS2007-61686 and CTQ2008-02578/BQU References: [1] Carslaw, K. S. et al.: Geophys. Res. Lett. 21, 2479-2482, 1994 [2] Drdla, K. Et al. :Geophys. Res. Lett. 21, 2473-2478, 1994 [3] Tabazadeh, A. et al.: Geophys. Res. Lett 21, 1619-1622, 1994 [4] Escribano, R et al.: J. J. Chem. Phys A 2003, 107, 652.

  2. Pressure-induced superconductivity in H2-containing hydride PbH4(H2)2

    PubMed Central

    Cheng, Ya; Zhang, Chao; Wang, Tingting; Zhong, Guohua; Yang, Chunlei; Chen, Xiao-Jia; Lin, Hai-Qing

    2015-01-01

    High pressure structure, stability, metallization, and superconductivity of PbH4(H2)2, a H2-containing compound combining one of the heaviest elements with the lightest element, are investigated by the first-principles calculations. The metallic character is found over the whole studied pressure range, although PbH4(H2)2 is metastable and easily decompose at low pressure. The decomposition pressure point of 133 GPa is predicted above which PbH4(H2)2 is stable both thermodynamically and dynamically with the C2/m symmetry. Interestedly, all hydrogen atoms pairwise couple into H2 quasi-molecules and remain this style up to 400 GPa in the C2/m structure. At high-pressure, PbH4(H2)2 tends to form the Pb-H2 alloy. The superconductivity of Tc firstly rising and then falling is observed in the C2/m PbH4(H2)2. The maximum of Tc is about 107 K at 230 GPa. The softening of intermediate-frequency phonon induced by more inserted H2 molecules is the main origin of the high Tc. The results obtained represent a significant step toward the understanding of the high pressure behavior of metallic hydrogen and hydrogen-rich materials, which is helpful for obtaining the higher Tc. PMID:26559369

  3. Angle-resolved photoelectron spectroscopy study of initial stage of thermal oxidation on 4H-SiC(0001)

    NASA Astrophysics Data System (ADS)

    Arai, Hitoshi; Nohira, Hiroshi

    2016-04-01

    A key to improving the performance of SiC MOSFETs is to clarify the SiO2/SiC interface structure formed by thermal oxidation. We have investigated the initial stage of thermal oxidation on 4H-SiC(0001) by angle-resolved photoelectron spectroscopy. From the changes in the Si 2p3/2 and C 1s photoelectron spectra, the changes in the chemical bonding state of the SiO2/SiC structure with the progress of thermal oxidation were observed. We also found that the intensity of C-O bonds in the case of 4H-SiC(0001) was smaller than that in the case of 4H-SiC(000\\bar{1}) with the same oxide thickness and that the oxidation rate of 4H-SiC(0001) is already slower than that of 4H-SiC(000\\bar{1}) in the early stage of oxidation.

  4. (+/-)-6-tert-butyl-8-hydroxymethyl-2-phenyl-4H-1,3-benzodioxin and 2,2,2',2',6,6'-hexamethyl-8,8'-methylenebis(4H-1,3-benzodioxin).

    PubMed

    Masci, Bernardo; Levi Mortera, Stefano; Varrone, Maurizio; Thuéry, Pierre

    2002-11-01

    Two compounds containing 1,3-benzodioxin groups are reported, namely (+/-)-6-tert-butyl-8-hydroxymethyl-2-phenyl-4H-1,3-benzodioxin, C(19)H(22)O(3), (I), and 2,2,2',2',6,6'-hexamethyl-8,8'-methylenebis(4H-1,3-benzodioxin), C(23)H(28)O(4), (II). The hydroxy groups of neighbouring molecules in (I) are hydrogen bonded to each other, giving rise to double-row chains. The molecule in (II) adopts a 'butterfly' conformation, with the O atoms in distal positions. In both compounds, the dioxin rings are in distorted half-chair conformations. PMID:12415170

  5. Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H10O Butan-1-ol (VMSD1511, LB4927_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume C 'Binary Liquid Systems of Nonelectrolytes III' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H10O Butan-1-ol (VMSD1511, LB4927_V)' providing data from direct measurement of low-pressure thermodynamic speed of sound at variable mole fraction and constant temperature, in the single-phase region(s).

  6. Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H10O Butan-2-ol (VMSD1212, LB4923_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume C 'Binary Liquid Systems of Nonelectrolytes III' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H10O Butan-2-ol (VMSD1212, LB4923_V)' providing data by calculation of molar excess volume from low-pressure density measurements at variable mole fraction and constant temperature.

  7. Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H10O Butan-2-ol (VMSD1111, LB4915_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume C 'Binary Liquid Systems of Nonelectrolytes III' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H10O Butan-2-ol (VMSD1111, LB4915_V)' providing data from direct low-pressure measurement of mass density at variable mole fraction and constant temperature, in the single-phase region(s).

  8. Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H8O2 Ethyl ethanoate (VMSD1412, LB4274_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume C 'Binary Liquid Systems of Nonelectrolytes III' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H8O2 Ethyl ethanoate (VMSD1412, LB4274_V)' providing data by calculation of isentropic compressibility from low-pressure density and thermodynamic speed of sound data at variable mole fraction and constant temperature, in the single-phase region(s).

  9. Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H9NO N,N-Dimethylethanamide (VMSD1212, LB4263_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume C 'Binary Liquid Systems of Nonelectrolytes III' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H9NO N,N-Dimethylethanamide (VMSD1212, LB4263_V)' providing data by calculation of molar excess volume from low-pressure density measurements at variable mole fraction and constant temperature.

  10. Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H10O Butan-1-ol (VMSD1212, LB4919_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume C 'Binary Liquid Systems of Nonelectrolytes III' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H10O Butan-1-ol (VMSD1212, LB4919_V)' providing data by calculation of molar excess volume from low-pressure density measurements at variable mole fraction and constant temperature.

  11. Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H8O2 Ethyl ethanoate (VMSD1212, LB4262_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume C 'Binary Liquid Systems of Nonelectrolytes III' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H8O2 Ethyl ethanoate (VMSD1212, LB4262_V)' providing data by calculation of molar excess volume from low-pressure density measurements at variable mole fraction and constant temperature.

  12. Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H9NO N,N-Dimethylethanamide (VMSD1111, LB4255_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume C 'Binary Liquid Systems of Nonelectrolytes III' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H9NO N,N-Dimethylethanamide (VMSD1111, LB4255_V)' providing data from direct low-pressure measurement of mass density at variable mole fraction and constant temperature, in the single-phase region(s).

  13. Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H8O2 Ethyl ethanoate (VMSD1111, LB4252_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume C 'Binary Liquid Systems of Nonelectrolytes III' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H8O2 Ethyl ethanoate (VMSD1111, LB4252_V)' providing data from direct low-pressure measurement of mass density at variable mole fraction and constant temperature, in the single-phase region(s).

  14. Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H9NO N,N-Dimethylethanamide (VMSD1511, LB4269_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume C 'Binary Liquid Systems of Nonelectrolytes III' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H9NO N,N-Dimethylethanamide (VMSD1511, LB4269_V)' providing data from direct measurement of low-pressure thermodynamic speed of sound at variable mole fraction and constant temperature, in the single-phase region(s).

  15. Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H10O Butan-1-ol (VMSD1111, LB4911_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume C 'Binary Liquid Systems of Nonelectrolytes III' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H10O Butan-1-ol (VMSD1111, LB4911_V)' providing data from direct low-pressure measurement of mass density at variable mole fraction and constant temperature, in the single-phase region(s).

  16. Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H9NO N,N-Dimethylethanamide (VMSD1412, LB4275_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume C 'Binary Liquid Systems of Nonelectrolytes III' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H9NO N,N-Dimethylethanamide (VMSD1412, LB4275_V)' providing data by calculation of isentropic compressibility from low-pressure density and thermodynamic speed of sound data at variable mole fraction and constant temperature, in the single-phase region(s).

  17. Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H8O2 Ethyl ethanoate (VMSD1511, LB4268_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume C 'Binary Liquid Systems of Nonelectrolytes III' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Propenenitrile C3H3N + C4H8O2 Ethyl ethanoate (VMSD1511, LB4268_V)' providing data from direct measurement of low-pressure thermodynamic speed of sound at variable mole fraction and constant temperature, in the single-phase region(s).

  18. Volumetric Properties of the Mixture 1,3-Dioxane C4H8O2 + C6H12 Cyclohexane (VMSD1511, LB5121_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume B 'Binary Liquid Systems of Nonelectrolytes II' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture 1,3-Dioxane C4H8O2 + C6H12 Cyclohexane (VMSD1511, LB5121_V)' providing data from direct measurement of low-pressure thermodynamic speed of sound at variable mole fraction and constant temperature, in the single-phase region(s).

  19. Volumetric Properties of the Mixture 1,3-Dioxane C4H8O2 + C6H12 Cyclohexane (VMSD1111, LB5124_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume B 'Binary Liquid Systems of Nonelectrolytes II' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture 1,3-Dioxane C4H8O2 + C6H12 Cyclohexane (VMSD1111, LB5124_V)' providing data from direct low-pressure measurement of mass density at variable mole fraction and constant temperature, in the single-phase region(s).

  20. Heat of Mixing and Solution of 1,3-Dioxane C4H8O2 + C6H12 Cyclohexane (HMSD1111, LB4308_H)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume B 'Binary Liquid Systems of Nonelectrolytes II' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Heat of Mixing and Solution of 1,3-Dioxane C4H8O2 + C6H12 Cyclohexane (HMSD1111, LB4308_H)' providing data from direct low-pressure calorimetric measurement of molar excess enthalpy at variable mole fraction and constant temperature.

  1. Volumetric Properties of the Mixture 1,3-Dioxane C4H8O2 + C6H12 Cyclohexane (VMSD1212, LB5126_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume B 'Binary Liquid Systems of Nonelectrolytes II' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture 1,3-Dioxane C4H8O2 + C6H12 Cyclohexane (VMSD1212, LB5126_V)' providing data by calculation of molar excess volume from low-pressure density measurements at variable mole fraction and constant temperature.

  2. Volumetric Properties of the Mixture Dichloromethane CH2Cl2 + C4H10S 3-Thiapentane (VMSD1211, LB3235_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume C 'Binary Liquid Systems of Nonelectrolytes III' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Dichloromethane CH2Cl2 + C4H10S 3-Thiapentane (VMSD1211, LB3235_V)' providing data from direct low-pressure dilatometric measurement of molar excess volume at variable mole fraction and constant temperature.

  3. Volumetric Properties of the Mixture Dichloromethane CH2Cl2 + C4H9Cl 1-Chlorobutane (VMSD1212, LB4568_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume C 'Binary Liquid Systems of Nonelectrolytes III' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Dichloromethane CH2Cl2 + C4H9Cl 1-Chlorobutane (VMSD1212, LB4568_V)' providing data by calculation of molar excess volume from low-pressure density measurements at variable mole fraction and constant temperature.

  4. Volumetric Properties of the Mixture Dichloromethane CH2Cl2 + C4H7NO Pyrrolidin-2-one (VMSD1212, LB3731_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume C 'Binary Liquid Systems of Nonelectrolytes III' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Dichloromethane CH2Cl2 + C4H7NO Pyrrolidin-2-one (VMSD1212, LB3731_V)' providing data by calculation of molar excess volume from low-pressure density measurements at variable mole fraction and constant temperature.

  5. Volumetric Properties of the Mixture 3-Thiapentane C4H10S + C16H34 Hexadecane (VMSD1212, LB3248_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume B 'Binary Liquid Systems of Nonelectrolytes II' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture 3-Thiapentane C4H10S + C16H34 Hexadecane (VMSD1212, LB3248_V)' providing data by calculation of molar excess volume from low-pressure density measurements at variable mole fraction and constant temperature.

  6. Volumetric Properties of the Mixture 3-Thiapentane C4H10S + C16H34 Hexadecane (VMSD1111, LB3277_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume B 'Binary Liquid Systems of Nonelectrolytes II' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture 3-Thiapentane C4H10S + C16H34 Hexadecane (VMSD1111, LB3277_V)' providing data from direct low-pressure measurement of mass density at variable mole fraction and constant temperature, in the single-phase region(s).

  7. 4H-Chromene-based anticancer agents towards multi-drug resistant HL60/MX2 human leukemia: SAR at the 4th and 6th positions.

    PubMed

    Puppala, Manohar; Zhao, Xinghua; Casemore, Denise; Zhou, Bo; Aridoss, Gopalakrishnan; Narayanapillai, Sreekanth; Xing, Chengguo

    2016-03-15

    4H-Chromene-based compounds, for example, CXL017, CXL035, and CXL055, have a unique anticancer potential that they selectively kill multi-drug resistant cancer cells. Reported herein is the extended structure-activity relationship (SAR) study, focusing on the ester functional group at the 4th position and the conformation at the 6th position. Sharp SARs were observed at both positions with respect to cellular cytotoxic potency and selectivity between the parental HL60 and the multi-drug resistant HL60/MX2 cells. These results provide critical guidance for future medicinal optimization. PMID:26867486

  8. Skynet Junior Scholars: From Idea to Enactment--Tales from the Trenches I. Implementation in 4-H settings.

    NASA Astrophysics Data System (ADS)

    Burnside, Jason; Feldman, Lynn; Gurton, Suzanne; Heatherly, Sue Ann; Hoette, Vivian L.; Murray, Jenny; Zastrow, Ginger

    2016-01-01

    The creators of Skynet Junior Scholars were ambitious to say the least when they set out to:- Develop online tools that enable middle school and high school aged youth to use robotic optical and radio telescopes to do astronomy- Create an inquiry-based curriculum that promotes critical thinking and scientific habits of mind- Proactively incorporate Principles of Universal Design in all SJS development tasks to ensure access by blind/low vision and deaf/hard of hearing youth- Prepare 180 adult youth leaders from diverse backgrounds including museum educators, amateur astronomers, teachers 4-H leaders to facilitate SJS activities in a variety of settings.After 3 years of development SJS is in full implementation mode. As of August, 2015, 105 youth leaders and leader supervisors from 24 states have completed professional development and many have formed SJS youth groups. In this paper we describe what it takes for a successful implementation of Skynet Junior Scholars in a 4-H setting, from the viewpoint of adult leaders in the trenches who have created novel implementation models to make SJS work in diverse environments from monthly 4-H meetings to immersive residential camps.4-H is the nation's largest positive youth development organization, with a membership of more than six million young people in the U.S. In 2003 the national organization formed a strong commitment to STEM education with the goal to "to engage one million new youth in a dynamic process of discovery and exploration in science, engineering and technology to prepare them to meet the challenges of the 21st century". Skynet Junior Scholars has formed a strong and growing partnership with state 4-H agencies in West Virginia and Wisconsin, with a goal of establishing SJS as a national 4-H curriculum.Skynet Junior Scholars is supported by the National Science Foundation under Grant Numbers 1223687, 1223235 and 1223345.

  9. ZC4H2, an XLID gene, is required for the generation of a specific subset of CNS interneurons.

    PubMed

    May, Melanie; Hwang, Kyu-Seok; Miles, Judith; Williams, Charlie; Niranjan, Tejasvi; Kahler, Stephen G; Chiurazzi, Pietro; Steindl, Katharina; Van Der Spek, Peter J; Swagemakers, Sigrid; Mueller, Jennifer; Stefl, Shannon; Alexov, Emil; Ryu, Jeong-Im; Choi, Jung-Hwa; Kim, Hyun-Taek; Tarpey, Patrick; Neri, Giovanni; Holloway, Lynda; Skinner, Cindy; Stevenson, Roger E; Dorsky, Richard I; Wang, Tao; Schwartz, Charles E; Kim, Cheol-Hee

    2015-09-01

    Miles-Carpenter syndrome (MCS) was described in 1991 as an XLID syndrome with fingertip arches and contractures and mapped to proximal Xq. Patients had microcephaly, short stature, mild spasticity, thoracic scoliosis, hyperextendable MCP joints, rocker-bottom feet, hyperextended elbows and knees. A mutation, p.L66H, in ZC4H2, was identified in a XLID re-sequencing project. Additional screening of linked families and next generation sequencing of XLID families identified three ZC4H2 mutations: p.R18K, p.R213W and p.V75in15aa. The families shared some relevant clinical features. In silico modeling of the mutant proteins indicated all alterations would destabilize the protein. Knockout mutations in zc4h2 were created in zebrafish and homozygous mutant larvae exhibited abnormal swimming, increased twitching, defective eye movement and pectoral fin contractures. Because several of the behavioral defects were consistent with hyperactivity, we examined the underlying neuronal defects and found that sensory neurons and motoneurons appeared normal. However, we observed a striking reduction in GABAergic interneurons. Analysis of cell-type-specific markers showed a specific loss of V2 interneurons in the brain and spinal cord, likely arising from mis-specification of neural progenitors. Injected human wt ZC4H2 rescued the mutant phenotype. Mutant zebrafish injected with human p.L66H or p.R213W mRNA failed to be rescued, while the p.R18K mRNA was able to rescue the interneuron defect. Our findings clearly support ZC4H2 as a novel XLID gene with a required function in interneuron development. Loss of function of ZC4H2 thus likely results in altered connectivity of many brain and spinal circuits. PMID:26056227

  10. ZC4H2, an XLID gene, is required for the generation of a specific subset of CNS interneurons

    PubMed Central

    May, Melanie; Hwang, Kyu-Seok; Miles, Judith; Williams, Charlie; Niranjan, Tejasvi; Kahler, Stephen G.; Chiurazzi, Pietro; Steindl, Katharina; Van Der Spek, Peter J.; Swagemakers, Sigrid; Mueller, Jennifer; Stefl, Shannon; Alexov, Emil; Ryu, Jeong-Im; Choi, Jung-Hwa; Kim, Hyun-Taek; Tarpey, Patrick; Neri, Giovanni; Holloway, Lynda; Skinner, Cindy; Stevenson, Roger E.; Dorsky, Richard I.; Wang, Tao; Schwartz, Charles E.; Kim, Cheol-Hee

    2015-01-01

    Miles–Carpenter syndrome (MCS) was described in 1991 as an XLID syndrome with fingertip arches and contractures and mapped to proximal Xq. Patients had microcephaly, short stature, mild spasticity, thoracic scoliosis, hyperextendable MCP joints, rocker-bottom feet, hyperextended elbows and knees. A mutation, p.L66H, in ZC4H2, was identified in a XLID re-sequencing project. Additional screening of linked families and next generation sequencing of XLID families identified three ZC4H2 mutations: p.R18K, p.R213W and p.V75in15aa. The families shared some relevant clinical features. In silico modeling of the mutant proteins indicated all alterations would destabilize the protein. Knockout mutations in zc4h2 were created in zebrafish and homozygous mutant larvae exhibited abnormal swimming, increased twitching, defective eye movement and pectoral fin contractures. Because several of the behavioral defects were consistent with hyperactivity, we examined the underlying neuronal defects and found that sensory neurons and motoneurons appeared normal. However, we observed a striking reduction in GABAergic interneurons. Analysis of cell-type-specific markers showed a specific loss of V2 interneurons in the brain and spinal cord, likely arising from mis-specification of neural progenitors. Injected human wt ZC4H2 rescued the mutant phenotype. Mutant zebrafish injected with human p.L66H or p.R213W mRNA failed to be rescued, while the p.R18K mRNA was able to rescue the interneuron defect. Our findings clearly support ZC4H2 as a novel XLID gene with a required function in interneuron development. Loss of function of ZC4H2 thus likely results in altered connectivity of many brain and spinal circuits. PMID:26056227

  11. Efficiency and impacts of hythane (CH4+H2) underground storage

    NASA Astrophysics Data System (ADS)

    Sáinz-García, Alvaro; Abarca, Elena; Grandia, Fidel

    2016-04-01

    The foreseen increase share of renewable energy production requires energy storage to mitigate shortage periods of energy supply. Hydrogen is an efficient energy carrier that can be transported and storage. A very promising way to store large amounts of hydrogen is underground geological reservoirs. Hydrogen can be stored, among other options, as a mixture of natural gas and less than 20% of hydrogen (hythane) to avoid damages on the existing infrastructure for gas transport. This technology is known as power-to-gas and is being considered by a number of European countries (Simon et al., 2015). In this study, the feasibility of a deep aquifer to store CH4-H2 mixtures in the Lower Triassic of the Paris Basin is numerically analyzed. The solubility of gas mixture in the groundwater is extremely low (Panfilov, 2015) and, therefore, gas and water are considered immiscible and non-reactive. An immiscible multiphase flow model is developed using the coefficient-form PDE interface of the finite element method code, COMSOL Multiphysics. The modelled domain is a 2D section of 2500 x 290 m resembling the Lower Triassic aquifer of the Paris basin, consisting of 2 layers of sandstone separated by a layer of conglomerates. The domain dips 0.5% from east to west. The top of the aquifer is 500 m-deep and the lateral boundaries are assumed to be open. This case is considered conservative compared to a dome-like geological trap, which could be more favorable to retain higher gas concentration. A number of cycles of gas production and injection were modelled. An automatic shut-down of the pump is implemented in case pressure on the well exceeds an upper or lower threshold. The influence of the position of the well, the uncertain residual gas saturation and the regional flow are studied. The model shows that both gas and aquifer properties have a significant impact on storage. Due to its low viscosity, the mobility of the hythane is quite high and gas expands significantly, reducing

  12. A monolithically integrated power JFET and Junction Barrier Schottky diode in 4H Silicon Carbide

    NASA Astrophysics Data System (ADS)

    Radhakrishnan, Rahul

    Efficiency of power management circuits depends significantly on their constituent switches and rectifiers. The demands of technology are increasingly running up against the intrinsic properties of Si based power devices. 4H-Silicon Carbide (SiC) has superior properties that make it attractive for high power applications. SiC rectifiers are already a competitive choice and SiC switches have also been commercialized recently. Junction Barrier Schottky (JBS) diodes, which combine the advantages of PN and Schottky, have higher Figure of Merit (FOM) as rectifiers. Among switches, a robust and mature process has been developed for Silicon Carbide Vertical Junction Field Effect Transistors (VJFETs), which currently gives it the highest unipolar FOM. Switches are frequently combined with anti-parallel diodes in power circuits. This thesis describes the development of a SiC-based monolithically integrated power switch and diode. Monolithic integration increases reliability and efficiency, and reduces cost. Because of their superior properties and similarities in fabrication, we chose the SiC VJFET and JBS diode as the switch and rectifier. Detailed design, fabrication and characterization of the integrated switch to block above 800 V and conduct current beyond 100 A/cm2 is explained. In this process, the first physics-based 2-D compact model is developed for reverse leakage in a JBS diode as a function of design parameters. Since the gate-channel junctions of SiC VJFETs cannot be assumed to be abrupt, an existing analytical model for Si VJFETs is extended to account for graded gate-channel junctions. Using these analytical models, design rules are developed for the VJFET and JBS diode. Finite element simulations are used to find the best anode layout of the JBS diode and optimize electric field termination in the integrated device to ensure their capability to operate at high voltage. Finally, a spin-on glass based process is developed for filling the gate trenches of the

  13. High Resolution Spectroscopy of Hexamethylenetetramine (hmt) C6N_4H12

    NASA Astrophysics Data System (ADS)

    Boudon, V.; Pirali, O.

    2012-06-01

    Hexamethylenetetramine, or HMT (C6N_4H12) is a N-substituted derivative of adamantane C10H16 which is the smallest sample of the diamondoid molecules family. Thanks to their high stability, diamond-like molecules have long been suspected to be present in space (note that diamond nanocrystals are extracted from Murchinson meteorites, and HMT is known to be an abundant residue of UV irradiated ice analogs and might be present in Titan's atmosphere. Using the Bruker IFS 125 coupled to a multipass cell (absorption path length of 150 m) of the AILES beamline at SOLEIL, we recorded the IR spectrum of gas phase HMT in the 300--3000 cm-1 spectral region with an unapodized resolution 0.001 cm-1. HMT is a solid powder with about 0.008 mbar vapour pressure at room temperature, it is a T_d molecule (as adamantane) and has 25 vibrational modes from which only 9 are infrared active. Over the 9 IR active modes, we were able to rotationlly resolved the spectra of 6 of them. The analysis of all the resolved bands has been performed thanks to the XTDS and SPVIEW softwares developed in Dijon for such molecules. Each band can be considered as isolated and we get very good fits of line positions, with a root mean square deviation better than 5× 10-4 cm-1 for J values up to 80 or more in each case. As for our recent study concerning adamantane, the resulting synthetic spectra will permit an active search of this very stable specie in different sources of the interstellar medium. W. C. Saslaw and J. E. Gaustad, Nature, 221, 160 (1969) R. S. Lewis et al., Nature, 326, 160 (1987) M. P. Bernstein et al., ApJ, 454, 327 (1995) Ch. Wenger, V. Boudon, M. Rotger, M. Sanzharov and J.-P. Champion, J. Mol. Spectrosc., 251 102--113 (2008). O. Pirali, V. Boudon, J. Oomens, M. Vervloet, J. Chem. Phys., 136, 024310 (2012)

  14. Analysis of forward current-voltage characteristics of nonideal Ti/4H-SiC Schottky barriers

    SciTech Connect

    Ivanov, P. A. Potapov, A. S.; Samsonova, T. P.

    2009-02-15

    Forward current-voltage characteristics of nonideal Ti/4H-SiC Schottky contacts with an ideality factor n = 1.1-1.2 in the exponential portion of the characteristics have been analyzed. The nonideality was considered to be a result of the formation of a thin dielectric layer between the deposited titanium layer and 4H-SiC. The following electrical parameters of the contacts were determined from experimental current-voltage characteristics: energy barrier height, thickness of the intermediate dielectric layer, and energy distribution of the density of states at the insulator-semiconductor interface.

  15. Amine-Catalyzed Asymmetric (3 + 3) Annulations of β'-Acetoxy Allenoates: Enantioselective Synthesis of 4H-Pyrans.

    PubMed

    Ni, Chunjie; Tong, Xiaofeng

    2016-06-29

    The asymmetric (3 + 3) annulations of β'-acetoxy allenoates with either 3-oxo-nitriles or pyrazolones have been realized by using 6'-deoxy-6'-[(l)-N,N-(2,2'-oxidiethyl)-valine amido]quinine (6h) as the catalyst. The three functions of catalyst 6h, including Lewis base (quinuclidine N), H-bond donor (amide NH), and Brønsted base (morpholine N), cooperatively take crucial roles on the chemo- and enantioselectivity, allowing for the construction of 4H-pyran and 4H-pyrano[2,3-c]pyrazole in high yields and enantioselectivity. PMID:27310820

  16. Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3C SiC

    NASA Technical Reports Server (NTRS)

    Clemen, L. L.; Devaty, R. P.; Macmillan, M. F.; Yoganathan, M.; Choyke, W. J.; Larkin, D. J.; Powell, J. A.; Edmond, J. A.; Kong, H. S.

    1993-01-01

    Evidence is presented for a four particle acceptor complex in 3C, 6H, and 4H SiC, obtained in low-temperature photoluminescence and cathodoluminescence experiments. The new lines were observed in p-type films lightly doped with aluminum, of 6H, 4H, and 3C SiC grown on the silicon (0001) face of 6H SiC under special conditions. The lines increase in intensity as more aluminum is added during growth. The multiplicity of observed lines is consistent with symmetry-based models similar to those which have been proposed to describe 4A centers in p-type zincblende semiconductors.

  17. The channeling effect of Al and N ion implantation in 4H-SiC during JFET integrated device processing

    NASA Astrophysics Data System (ADS)

    Lazar, M.; Laariedh, F.; Cremillieu, P.; Planson, D.; Leclercq, J.-L.

    2015-12-01

    A strong channeling effect is observed for the ions of Al and N implanted in 4H-SiC due to its crystalline structure. This effect causes difficulties in subsequent accurate estimation of the depth of junctions formed by multiple ion implantation steps. A variety of lateral JFET transistors integrated on the same 4H-SiC wafer have been fabricated. Secondary Ion Mass Spectrometry measurements and Monte-Carlo simulations were performed in order to quantify and control the channeling effect of the implanted ions. A technological process was established enabling to obtain devices working with the presence of the channeling effect.

  18. Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(033¯8)

    NASA Astrophysics Data System (ADS)

    Yano, Hiroshi; Hirao, Taichi; Kimoto, Tsunenobu; Matsunami, Hiroyuki; Shiomi, Hiromu

    2002-12-01

    The interface properties of SiO2/4H-SiC(033¯8) were characterized using n-type metaloxide-semiconductor structures fabricated by wet oxidation. The interface states near the conduction band edge are discussed based on the capacitance and conductance measurements at a low temperature and room temperature. 4H-SiC(033¯8) was found to have different energy distribution of the interface state density from the (0001) face. The shallow interface state density on (033¯8) is lower than on (0001) by a factor of 4 to 8.

  19. Drift Phenomena of Forward and Reverse Recovery Characteristics in 0001 4H-SiC p-i-n Diode

    NASA Astrophysics Data System (ADS)

    Nakayama, Koji; Sugawara, Yoshitaka; Tsuchida, Hidekazu; Kimura, Chiharu; Aoki, Hidemitsu

    2011-04-01

    4H-SiC p-i-n diodes fabricated on the (0001) C-face showed smaller forward voltage drift and minimal changes in reverse recovery characteristics after a forward bias stress test compared to those observed on the (0001) Si-face. These drift phenomena in 4H-SiC p-i-n diodes could be explained by increased recombination along the perimeter of single Shockley-type stacking faults. It is suggested that the number of single Shockley-type stacking faults significantly decreased in the drift layer fabricated on (0001) C-face in comparison with that on (0001) Si-face.

  20. Cinnamic acid 4-hydroxylase of sorghum [Sorghum biocolor (L.) Moench] gene SbC4H1 restricts lignin synthesis in Arabidopsis

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Cinnamic acid 4-hydroxylase (C4H) is the first hydroxylase enzyme of the phenylpropanoid pathway, and its content and activity affects the lignin synthesis. In this study, we isolated a C4H gene SbC4H1 from the suppression subtractive hybridization library of brown midrib (bmr) mutants of Sorghum b...

  1. A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults

    SciTech Connect

    Piluso, N. Camarda, M.; La Via, F.

    2014-10-28

    A novel Micro-Raman technique was designed and used to detect extended defects in 4H-SiC homoepitaxy. The technique uses above band-gap high-power laser densities to induce a local increase of free carriers in undoped epitaxies (n < 10{sup 16} at/cm{sup −3}), creating an electronic plasma that couples with the longitudinal optical (LO) Raman mode. The Raman shift of the LO phonon-plasmon-coupled mode (LOPC) increases as the free carrier density increases. Crystallographic defects lead to scattering or recombination of the free carriers which results in a loss of coupling with the LOPC, and in a reduction of the Raman shift. Given that the LO phonon-plasmon coupling is obtained thanks to the free carriers generated by the high injection level induced by the laser, we named this technique induced-LOPC (i-LOPC). This technique allows the simultaneous determination of both the carrier lifetime and carrier mobility. Taking advantage of the modifications on the carrier lifetime induced by extended defects, we were able to determine the spatial morphology of stacking faults; the obtained morphologies were found to be in excellent agreement with those provided by standard photoluminescence techniques. The results show that the detection of defects via i-LOPC spectroscopy is totally independent from the stacking fault photoluminescence signals that cover a large energy range up to 0.7 eV, thus allowing for a single-scan simultaneous determination of any kind of stacking fault. Combining the i-LOPC method with the analysis of the transverse optical mode, the micro-Raman characterization can determine the most important properties of unintentionally doped film, including the stress status of the wafer, lattice impurities (point defects, polytype inclusions) and a detailed analysis of crystallographic defects, with a high spectral and spatial resolution.

  2. Clean photodecomposition of 1-methyl-4-phenyl-1H-tetrazole-5(4H)-thiones to carbodiimides proceeds via a biradical

    PubMed Central

    Alawode, Olajide E.; Robinson, Colette; Rayat, Sundeep

    2010-01-01

    The photochemistry of 1-methyl-4-phenyl-1H-tetrazole-5(4H)-thione (1a) and 1-(3-methoxyphenyl)-4-methyl-1H-tetrazole-5(4H)-thione (1b) was studied in acetonitrile at 254 and 300 nm which involves expulsion of dinitrogen and sulfur to form the respective carbodiimides 5a – b as sole photoproducts. Photolysis of the title compounds in the presence of 1,4-cyclohexadiene trap led to the formation of respective thioureas, providing strong evidence for the intermediacy of a 1,3-biradical formed by the loss of dinitrogen. In contrast, a trapping experiment with cyclohexene provided no evidence to support an alternative pathway of photodecomposition involving initial desulfurization followed by loss of dinitrogen via the intermediacy of a carbene. Triplet sensitization and triplet quenching studies argue against the involvement of a triplet excited state. While the quantum yields for the formation of the carbodiimides 5a – b were modest, and showed little change on going from a C6H5 (1a) to mOMeC6H4 (1b) substituent on the tetrazolethione ring, the highly clean photodecomposition of these compounds to a photostable end product makes them promising lead structures for industrial, agricultural and medicinal applications. PMID:21142194

  3. The Impact of Raising and Exhibiting Selected 4-H Livestock Projects on the Development of Life and Project Skills.

    ERIC Educational Resources Information Center

    Rusk, Clinton P.; Summerlot-Early, Jill M.; Machtmes, Krisanna L.; Talbert, B. Allen; Balschweid, Mark A.

    2003-01-01

    Responses from 176 of 420 4-H members involved in livestock projects showed they were able to accomplish skills in sportsmanship, safety, and animal grooming and selection but were less confident about animal health care. The sense of responsibility acquired from these projects was applied to homework, punctuality, and care for younger siblings.…

  4. Laser-plasma X-ray detection by using fast 4H-SiC interdigit and ion collector detectors

    NASA Astrophysics Data System (ADS)

    Torrisi, L.; Sciuto, A.; Calcagno, L.; Musumeci, P.; Mazzillo, M.; Ceccio, G.; Cannavò, A.

    2015-07-01

    Non-equilibrium plasma generated by nanosecond pulsed laser are characterized by solid state 4H-SiC interdigit Schottky diodes and by a large area ion collector detector, both connected in time-of-flight configuration. Plasma generated by irradiation of different metallic targets through a pulsed laser with a 1010 W/cm2 intensity and a 200 mJ energy, where monitored. In this paper we demonstrate that the interdigit 4H-SiC diode is able to detect ultraviolet radiation and soft X-rays, with energy of the order of 20 eV with very short rise time, of a few nanoseconds, and high efficiency, comparable with the performance of traditional large area ion collectors. Thanks to their millimetric size, solid state 4H-SiC detectors are good candidates for the fabrication of array systems for the spatial distribution measurement of plasma radiation. Moreover, owing to the their high efficiency and the interdigit geometry of front electrode, 4H-SiC diodes here proposed are suitable also for low energy ions detection.

  5. Fowler-Nordheim electron tunneling mechanism in Ni/SiO2/n-4H SiC MOS devices

    NASA Astrophysics Data System (ADS)

    Kodigala, Subba Ramaiah; Chattopadhyay, S.; Overton, C.; Ardoin, I.

    2015-12-01

    The Ni/SiO2/n-type 4H SiC MOS devices have been fabricated for microelectronic device applications. The SiO2 layer employed in the MOS devices is grown by wet thermal oxidation process. The current-field characteristics of Ni/SiO2/n-type 4H SiC MOS devices are quiet interestingly studied by employing Fowler Nordheim (FN) conduction tunneling model, which is verified by theoretical simulation. It is learnt that the tunneling current through the barrier in the MOS devices promptly obeys the FN conduction tunneling mechanism. The simulation results show that the current in the MOS device increases and barrier height decreases with increasing temperature and internal electric field. Therefore, the correction factor for the barrier height of n-type 4H SiC/SiO2 MOS device due to the influence of both the temperature and internal electric field is employed. The barrier height observed by the experiments is apparently smaller than the simulated one of an ideal MOS device. However, after employing all the correction factors to the barrier height, the simulated current-field curves fairly coincide with the experimental results. The reason for obtaining smaller experimental barrier height for MOS devices is substantially explored with the support of current-field (J-F) analysis. On the other hand, this article comprehensively addresses the effects of quantum mechanical, interface trap density and thickness of 4H-SiC on the barrier height.

  6. Improving Healthy Living Youth Development Program Outreach in Extension: Lessons Learned from the 4-H Health Rocks! Program

    ERIC Educational Resources Information Center

    Kumaran, Muthusami; Fogarty, Kate; Fung, Whitney M.; Terminello, Amanda

    2015-01-01

    This article discusses a qualitative evaluation of the Florida 4-H Health Rocks! program aimed at youth alcohol, tobacco, and other drug use prevention. A questionnaire was distributed to Extension professionals across Florida to gain insight into the strengths and barriers they faced with programming. Programmatic strengths included targeting a…

  7. The reaction H + C4H2 - Absolute rate constant measurement and implication for atmospheric modeling of Titan

    NASA Astrophysics Data System (ADS)

    Nava, D. F.; Mitchell, M. B.; Stief, L. J.

    1986-04-01

    The absolute rate constant for the reaction H + C4H2 has been measured over the temperature (T) interval 210-423 K, using the technique of flash photolysis-resonance fluorescence. At each of the five temperatures employed, the results were independent of variations in C4H2 concentration, total pressure of Ar or N2, and flash intensity (i.e., the initial H concentration). The rate constant, k, was found to be equal to 1.39 x 10 to the -10th exp (-1184/T) cu cm/s, with an error of one standard deviation. The Arrhenius parameters at the high pressure limit determined here for the H + C4H2 reaction are consistent with those for the corresponding reactions of H with C2H2 and C3H4. Implications of the kinetic carbon chemistry results, particularly those at low temperature, are considered for models of the atmospheric carbon chemistry of Titan. The rate of this reaction, relative to that of the analogous, but slower, reaction of H + C2H2, appears to make H + C4H2 a very feasible reaction pathway for effective conversion of H atoms to molecular hydrogen in the stratosphere of Titan.

  8. Nationwide Participation in 4-H during the 1980s: Information from the Office of Education NELS:88 Study.

    ERIC Educational Resources Information Center

    Steele, Sara M.; And Others

    A study examined national participation in 4-H Club activities during the 1980s. The study population was a carefully drawn sample of 24,500 eighth graders from more than 1,000 public and private schools throughout the country as well as their parents and teachers. The study established that, as of 1988, about one of every six eighth-grade…

  9. A Reconceptualized Analysis of the West Virginia 4-H Global Education Program: Attitudes of Agents, Specialists, and Volunteers

    ERIC Educational Resources Information Center

    Abdulai, Ahmed M.

    2009-01-01

    Global Education has been and continues to be an important aspect of American higher educational curriculum. Its importance is evidenced not only at the formal educational sector, but also within youth development programs like the West Virginia 4-H program. The author contends that, the importance of global education is more relevant in the…

  10. Helping Leaders Help Youth. An Evaluation Report of a Program for Illinois Volunteer 4-H Leaders, 1973-75.

    ERIC Educational Resources Information Center

    Illinois Univ., Urbana. Cooperative Extension Service.

    Conceived by the staff of the University of Illinois Cooperative Extension Service as a means of aiding County Extension Advisors in working with volunteer 4-H leaders in Illinois, "Helping Leaders Help Youth" employed a combination of vinyl sound sheets for home study and a leader development meeting series supported by audiovisual aids and…

  11. Reevaluation of the reported observation of the {sub {lambda}}{sub {lambda}}{sup 4}H hypernucleus

    SciTech Connect

    Randeniya, S. D.; Hungerford, E. V.

    2007-12-15

    The results of experiment E906, undertaken at the Alternating Gradient Synchrotron of the Brookhaven National Laboratory (BNL-AGS), were reanalyzed to clarify the signature of the decays of the double- and single-{lambda} hypernuclei that could have been produced in this experiment. This reanalysis indicates that instead of the reported decay of {sub {lambda}}{sub {lambda}}{sup 4}H through a proposed resonance in {sub {lambda}}{sup 4}He, it is more probable that the decay of the {sub {lambda}}{sub {lambda}}{sup 7}He hypernucleus was observed. This decay was accompanied by a background of coincident decays of pairs of the single hypernuclear fragments {sub {lambda}}{sup 3}H with {sub {lambda}}{sup 4}H, {sub {lambda}}{sup 3}H with {sub {lambda}}{sup 3}H, and {sub {lambda}}{sup 4}H with {sub {lambda}}{sup 4}H. An attempt was also made to determine if any other double or coincident single hypernuclear species could be observed in the data.

  12. Living the Dream of Green Acres: Boy with Autism Finds Acceptance and Success Thanks to 4-H

    ERIC Educational Resources Information Center

    Richardson, Ginny

    2006-01-01

    Twelve-year-old Aaron Zibricky, a member of the Lucky Clovers 4-H Club, entered his prize sheep, Star, in the 2005 Will County Fair in Illinois. Zibricky, who is diagnosed with autism, had worked and strived for this moment, putting in long hours feeding, cleaning and shearing the sheep and learning showmanship skills. No one was more elated at…

  13. Regionalization of the Washington State University Extension 4-H Youth Development Program: Employee Awareness, Buy-In, and Communication

    ERIC Educational Resources Information Center

    White, Alison J.; Teuteberg, Dan

    2015-01-01

    Washington's 4-H program is transitioning from a predominately single-county faculty model to a regional system. This article highlights survey results regarding the level of awareness and buy-in that Extension administration, faculty, and staff have concerning the regional model and how communication about the model took place. While most…

  14. Blue Sky Below My Feet. Adventures in Space Technology, Forces, Fibers, Foods. 4-H Leader/Teacher Handbook.

    ERIC Educational Resources Information Center

    Manholt, Donna; And Others

    This teaching guide for 4th through 6th grade classes integrates science, language arts, and math concepts into ready-to-use space and space technology lessons. Significant learning outcomes for this curriculum are linked to Ohio's educational objectives for science in an at-a-glance curriculum matrix. A summary of the significant 4-H life skills…

  15. On the relationship between radiation-stimulated photoluminescence and nitrogen atoms in p-4 H-SiC

    NASA Astrophysics Data System (ADS)

    Lebedev, A. A.; Ber, B. Ya.; Bogdanova, E. V.; Seredova, N. V.; Kazantsev, D. Yu.; Kozlovski, V. V.

    2015-12-01

    Photoluminescence (PL) appearing in p-4 H-SiC upon its electron irradiation has been studied. A model that accounts for the dependence of the PL intensity on the irradiation dose is suggested. The conclusion is drawn that nitrogen-radiation defect donor-acceptor pairs are PL activators.

  16. The impact of surface morphology on C- and Si-face 4H-SiC Schottky barrier diodes

    NASA Astrophysics Data System (ADS)

    Lee, Kung-Yen; Huang, Chih-Fang; Chen, Wenzhou; Capano, Michael A.

    2007-12-01

    The goal of this research is to investigate the correlation of reverse characteristics of Schottky barrier diodes (SBDs) and surface morphological defects on 4° (off-axis) carbon (C) face, 4° and 8° silicon (Si) face 4H-SiC. Different dimensions of SBDs with boron-implanted edge terminations are fabricated on 4° C-face, 4° and 8° Si-face 4H-SiC samples. The ideality factor for these three samples is about 1.1. Average breakdown voltages of 4° Si-face 4H-SiC SBDs are higher than the other two samples, particularly for large size SBDs. Breakdown voltages of 1500 and 2000 μm 4° Si-face SBDs can reach over 1000 V. This value is about two times higher than the other two samples, though the root-mean-square (RMS) roughness of 4° Si-face samples obtained from atomic force microscopy (AFM) is 3.5 nm. The yield of 1500 and 2000 μm 4° Si-face 4H-SiC SBDs with a breakdown voltage over 1000 V is more than 50%, much higher than the other two samples.

  17. From Threshers to Thrashers: In Montana, 4-H Takes a Modern Spin To Engage "Blue-Ribbon Kids."

    ERIC Educational Resources Information Center

    Linik, Joyce Riha

    2002-01-01

    A 4-H skateboard club in Bozeman, Montana offers kids community service and educational opportunities as well as something to do after school. Adult and college-student volunteers teach a skateboarding curriculum and help kids fix boards and design ramps. Club members have learned public speaking, fundraising, city planning, and civic involvement…

  18. [Nebraska 4-H Wheat Science School Enrichment Project, Teacher/Leader Guides 213-222 and 227.

    ERIC Educational Resources Information Center

    Nebraska Univ., Lincoln. Inst. of Agriculture and Natural Resources.

    Through the 4-H Wheat Science project, students learn the importance of wheat from the complete process of growing wheat to the final product of bread. The curriculum is designed to include hands-on experiences in science, consumer education, nutrition, production economics, vocabulary, and applied mathematics. Teachers can select those units out…

  19. Synthesis of a Biologically Active Oxazol-5-(4H)-One via an Erlenmeyer-Plo¨chl Reaction

    ERIC Educational Resources Information Center

    Rodrigues, Catarina A. B.; Martinho, Jose´ M. G.; Afonso, Carlos A. M.

    2015-01-01

    The synthesis of (Z)-4-(4-nitrobenzylidene)-2- phenyloxazol-5(4"H")-one, which is a potent immunomodulator and tyrosinase inhibitor, is described as an experiment for an upper-division undergraduate organic chemistry laboratory course. This compound is produced via an Erlenmeyer-Plo¨chl reaction in the absence of any additional solvents…

  20. Factors Influencing Food Choices of 4-H Club Members in Williamson County, Tennessee. A Research Summary of a Graduate Study.

    ERIC Educational Resources Information Center

    Geary, Virginia Ruth; And Others

    A study was conducted to identify some of the eating habits and factors influencing food choices of selected junior (9 to 13 years old) and senior (14 to 19 years old) 4-H club members enrolled in Williamson County, Tennessee, in 1968. Data were collected through group interviews with 200 juniors and 70 seniors--116 boys and 154 girls.…

  1. Synthesis, structure refinement and characterization of tetrahydrated acid gadolinium diphosphate HGdP{sub 2}O{sub 7}.4H{sub 2}O

    SciTech Connect

    Hraiech, Sana; Chehimi-Moumen, Fathia . E-mail: fathia.chehimi@fsb.rnu.tn; Ferid, Mokhtar; Hassen-Chehimi, D. Ben; Trabelsi-Ayadi, Malika

    2005-12-08

    Synthesis and single crystal structure are reported for a new gadolinium acid diphosphate tetrahydrate HGdP{sub 2}O{sub 7}.4H{sub 2}O. This salt crystallizes in the monoclinic system, space group P2{sub 1}/n, with the following unit-cell parameters: a=6.6137(2)A, b=11.4954(4)A, c=11.377(4)A, {beta}=87.53(2){sup o} and Z=4. Its crystal structure was refined to R=0.0333 using 1783 reflections. The corresponding atomic arrangement can be described as an alternation of corrugated layers of monohydrogendiphosphate groups and GdO{sub 8} polyhedra parallel to the (1-bar 01) plane. The cohesion between the different diphosphoric groups is provided by strong hydrogen bonding involving the W4 water molecule. IR and Raman spectra of HGdP{sub 2}O{sub 7}.4H{sub 2}O confirm the existence of the characteristic bands of diphosphate group in 980-700cm{sup -1} area. The IR spectrum reveals also the characteristic bands of water molecules vibration (3600-3230cm{sup -1}) and acidic hydrogen ones (2340cm{sup -1}). TG and DTA investigations show that the dehydration of this salt occurs between 79 and 900 deg. C. It decomposes after dehydration into an amorphous phase. Gadolinium diphosphate Gd{sub 4}(P{sub 2}O{sub 7}){sub 3} was obtained by heating HGdP{sub 2}O{sub 7}.4H{sub 2}O in a static air furnace at 850 deg. C for 48h.

  2. Synthesis of 4H/fcc-Au@M (M = Ir, Os, IrOs) Core-Shell Nanoribbons For Electrocatalytic Oxygen Evolution Reaction.

    PubMed

    Fan, Zhanxi; Luo, Zhimin; Chen, Ye; Wang, Jie; Li, Bing; Zong, Yun; Zhang, Hua

    2016-08-01

    The high-yield synthesis of 4H/face-centered cubic (fcc)-Au@Ir core-shell nanoribbons (NRBs) is achieved via the direct growth of Ir on 4H Au NRBs under ambient conditions. Importantly, this method can be used to synthesize 4H/fcc-Au@Os and 4H/fcc-Au@IrOs core-shell NRBs. Significantly, the obtained 4H/fcc-Au@Ir core-shell NRBs demonstrate an exceptional electrocatalytic activity toward the oxygen evolution reaction under acidic condition, which is much higher than that of the commercial Ir/C catalyst. PMID:27345872

  3. Breakdown Degradation Associated with Elementary Screw Dislocations in 4H-SiC P(+)N Junction Rectifiers

    NASA Technical Reports Server (NTRS)

    Neudeck, P. G.; Huang, W.; Dudley, M.

    1998-01-01

    It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vector greater than 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = lc with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. This paper describes an initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage (I-V) characteristics of 4H-SiC p(+)n diodes. First, Synchrotron White Beam X-ray Topography (SWBXT) was employed to map the exact locations of elementary screw dislocations within small-area 4H-SiC p(+)n mesa diodes. Then the high-field reverse leakage and breakdown properties of these diodes were subsequently characterized on a probing station outfitted with a dark box and video camera. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown I-V knee, and no visible concentration of breakdown current. In contrast devices that contained at least one elementary screw dislocation exhibited a 5% to 35% reduction in breakdown voltage, a softer breakdown I-V knee, and visible microplasmas in which highly localized breakdown current was concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified by SWBXT mapping. While not as detrimental to SiC device performance as micropipes, the undesirable breakdown characteristics of elementary screw dislocations could nevertheless adversely affect the performance and reliability of 4H-SiC power devices.

  4. Temperature dependence of current-and capacitance-voltage characteristics of an Au/4H-SiC Schottky diode

    NASA Astrophysics Data System (ADS)

    Gülnahar, Murat

    2014-12-01

    In this study, the current-voltage (I-V) and capacitance-voltage (C-V) measurements of an Au/4H-SiC Schottky diode are characterized as a function of the temperature in 50-300 K temperature range. The experimental parameters such as ideality factor and apparent barrier height presents to be strongly temperature dependent, that is, the ideality factor increases and the apparent barrier height decreases with decreasing temperature, whereas the barrier height values increase with the temperature for C-V data. Likewise, the Richardson plot deviates at low temperatures. These anomaly behaviors observed for Au/4H-SiC are attributed to Schottky barrier inhomogeneities. The barrier anomaly which relates to interface of Au/4H-SiC is also confirmed by the C-V measurements versus the frequency measured in 300 K and it is interpreted by both Tung's lateral inhomogeneity model and multi-Gaussian distribution approach. The values of the weighting coefficients, standard deviations and mean barrier height are calculated for each distribution region of Au/4H-SiC using the multi-Gaussian distribution approach. In addition, the total effective area of the patches NAe is obtained at separate temperatures and as a result, it is expressed that the low barrier regions influence meaningfully to the current transport at the junction. The homogeneous barrier height value is calculated from the correlation between the ideality factor and barrier height and it is noted that the values of standard deviation from ideality factor versus q/3kT curve are in close agreement with the values obtained from the barrier height versus q/2kT variation. As a result, it can be concluded that the temperature dependent electrical characteristics of Au/4H-SiC can be successfully commented on the basis of the thermionic emission theory with both models.

  5. Microstructure of heteroepitaxial GaN grown on mesa-patterned 4H-SiC substrates

    NASA Astrophysics Data System (ADS)

    Bassim, N. D.; Twigg, M. E.; Eddy, C. R.; Henry, R. L.; Holm, R. T.; Culbertson, J. C.; Stahlbush, R. E.; Neudeck, P. G.; Trunek, A. J.; Powell, J. A.

    2004-06-01

    Cross-sectional transmission electron microscopy and atomic force microscopy have been used to study the microstructure of a thin heteroeptiaxial GaN film grown on (0001) 4H-SiC mesa surfaces with and without atomic scale steps. Analysis of a mesa that was completely free of atomic-scale surface steps prior to III -N film deposition showed that these GaN layers had a wide variation in island height (1-3μm ) and included the presence of pit-like defects on the film surface. This sample had a low dislocation density (5×108/cm2) as compared to conventionally grown samples on unpatterned (0001) on-axis 4H-SiC (2×109/cm2), coupled with a 3-5 times increase in grain size. A comparison of a GaN film on the step-free 4H-SiC mesa region with a GaN film on a stepped 4H-SiC mesa region on the same substrate showed that the presence of surface steps reduced the overall grain size of the film from 7-10μm to a grain size of about 2-3μm. Since the GaN films grow via a Volmer-Weber mechanism, a decrease in the number of heterogeneous nucleation sites may allow the growth of large GaN islands before coalescence, thus reducing the number of threading dislocations. These results are promising for the further development of unique, low-dislocation density active regions for GaN device structures on 4H-SiC.

  6. Microstructural evolution of diamond films from CH{sub 4}/H{sub 2}/N{sub 2} plasma and their enhanced electrical properties

    SciTech Connect

    Sankaran, K. J.; Tai, N. H.; Lin, I. N.

    2015-02-21

    The influence of N{sub 2} concentration in CH{sub 4}/H{sub 2}/N{sub 2} plasma on microstructural evolution and electrical properties of diamond films is systematically investigated. While the diamond films grown in CH{sub 4}/H{sub 2} plasma contain large diamond grains, for the diamond films grown using CH{sub 4}/H{sub 2}/(4%)N{sub 2} plasma, the microstructure drastically changed, resulting in ultra-nanosized diamond grains with Fd3m structure and a{sub 0} = 0.356 nm, along with the formation of n-diamond (n-D), a metastable form of diamond with space group Fm3m and a{sub 0} = 0.356 nm, and i-carbon (i-C) clusters, the bcc structured carbon with a{sub 0} = 0.432 nm. In addition, these films contain wide grain boundaries containing amorphous carbon (a-C). The electron field emission (EFE) studies show the best EFE behavior for 4% N{sub 2} films among the CH{sub 4}/H{sub 2}/N{sub 2} grown diamond films. They possess the lowest turn-on field value of 14.3 V/μm and the highest EFE current density value of 0.37 mA/cm{sup 2} at an applied field of 25.4 V/μm. The optical emission spectroscopy studies confirm that CN species are the major criterion to judge the changes in the microstructure of the films. It seems that the grain boundaries can provide electron conduction networks to transport efficiently the electrons to emission sites for field emission, as long as they have sufficient thickness. Whether the matrix nano-sized grains are 3C-diamond, n-D or i-C is immaterial.

  7. Synthesis and structural study on heterocyclic compounds 7-decanoyloxy-3-(4‧-substitutedphenyl)-4H-1-benzopyran-4-ones: Crystal structure of 7-decanoyloxy-3-(4‧-methylphenyl)-4H-1-benzopyran-4-one

    NASA Astrophysics Data System (ADS)

    Yeap, Guan-Yeow; Yam, Wan-Sinn; Dominiak, Paulina; Ito, Masato M.

    2010-04-01

    Six new isoflavone-based esters, 7-decanoyloxy-3-(4'-substitutedphenyl)-4 H-1-benzopyran-4-ones, derived from 1,3-benzenediol (resorcinol) and different para substituted phenylacetic acids have been synthesized and characterized. The molecular structures of the title compounds were elucidated with the employment of physical measurements and spectroscopic techniques (FTIR, 1D and 2D NMR). The conformation of 7-decanoyloxy-3-(4'-methylphenyl)-4 H-1-benzopyran-4-one was determined by single crystal X-ray diffraction analysis of which the title compound crystallized into triclinic lattice with P-1 space group. Crystal structure of the title compound also revealed that the two phenyl rings of the central moiety were planar whilst the heterocyclic ring was found to pucker slightly from the mean plane.

  8. Synthesis of 5,6-dihydro-4H-benzo[d]isoxazol-7-one and 5,6-dihydro-4H-isoxazolo[5,4-c]pyridin-7-one derivatives as potential Hsp90 inhibitors.

    PubMed

    Musso, Loana; Cincinelli, Raffaella; Giannini, Giuseppe; Manetti, Fabrizio; Dallavalle, Sabrina

    2015-11-01

    A novel class of 5,6-dihydro-4H-benzo[d]isoxazol-7-ones and 5,6-dihydro-4H-isoxazolo[5,4-c]pyridin-7-ones was designed, synthesized, and assayed to investigate the affinity toward Hsp90 protein. The synthetic route was based on a 1,3-dipolar cycloaddition of nitriloxides, generated in situ from suitable benzaldoximes, with 2-bromocyclohex-2-enones or 3-bromo-5,6-dihydro-1H-pyridin-2-ones. Whereas all the compounds bearing a benzamide group on the bicyclic scaffold were devoid of activity, the derivatives carrying a resorcinol-like fragment showed a remarkable inhibitory effect on Hsp90. Docking calculations were performed to investigate the orientation of the new compounds within the binding site of the enzyme. PMID:25855505

  9. Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures

    NASA Astrophysics Data System (ADS)

    Domanowska, A.; Miczek, M.; Ucka, R.; Matys, M.; Adamowicz, B.; Żywicki, J.; Taube, A.; Korwin-Mikke, K.; Gierałtowska, S.; Sochacki, M.

    2012-08-01

    The electronic and chemical properties of the interface region in the structures obtained by the passivation of epitaxial n-type 4H-SiC layers with bilayers consisting of a 5 nm-thick SiO2 or Al2O3 buffer film and high-κ HfO2 layer were investigated. The main aim was to estimate the influence of the passivation approach on the interface effective charge density (Qeff) from the surface photovoltage (SPV) method and, in addition to determine the in-depth element distribution in the interface region from the Auger electron spectroscopy (AES) combined with Ar+ ion profiling. The structure HfO2/SiO2/4H-SiC exhibited slightly superior electronic properties in terms of Qeff (in the range of -1011 q cm-2).

  10. The ferrimagnetic compounds CoM[Mscript(EDTA)]2 . 4H2O(M,Mscript=Co,Ni): Magnetic characterization of CoCo[Ni(EDTA)2] . 4H2O

    NASA Astrophysics Data System (ADS)

    Sapiña, F.; Coronado, E.; Gomez-Romero, P.; Beltran, D.; Burriel, R.; Carlin, R. L.

    1990-05-01

    We report on the magnetic properties of the ordered bimetallic compound CoCo(NiEDTA)2ṡ4H2O (abbreviated as [CoCoNi]). The structure consists of ordered bimetallic layers formed by alternating octahedral sites of Co and Ni(II); tetrahedral Co sites connect different Co-Ni layers. We discuss the low-dimensional ferrimagnetic behavior of this compound in terms of a model that assumes three spin sublattices exchange coupled by an Ising interaction.

  11. Structural and electronic properties of the transition layer at the SiO{sub 2}/4H-SiC interface

    SciTech Connect

    Li, Wenbo; Wang, Dejun; Zhao, Jijun

    2015-01-15

    Using first-principles methods, we generate an amorphous SiO{sub 2}/4H-SiC interface with a transition layer. Based this interface model, we investigate the structural and electronic properties of the interfacial transition layer. The calculated Si 2p core-level shifts for this interface are comparable to the experimental data, indicating that various SiC{sub x}O{sub y} species should be present in this interface transition layer. The analysis of the electronic structures reveals that the tetrahedral SiC{sub x}O{sub y} structures cannot introduce any of the defect states at the interface. Interestingly, our transition layer also includes a C-C=C trimer and SiO{sub 5} configurations, which lead to the generation of interface states. The accurate positions of Kohn-Sham energy levels associated with these defects are further calculated within the hybrid functional scheme. The Kohn-Sham energy levels of the carbon trimer and SiO{sub 5} configurations are located near the conduction and valence band of bulk 4H-SiC, respectively. The result indicates that the carbon trimer occurred in the transition layer may be a possible origin of near interface traps. These findings provide novel insight into the structural and electronic properties of the realistic SiO{sub 2}/SiC interface.

  12. Structure-Based Design and Synthesis of 3-Amino-1,5-dihydro-4H-pyrazolopyridin-4-one Derivatives as Tyrosine Kinase 2 Inhibitors.

    PubMed

    Yogo, Takatoshi; Nagamiya, Hiroyuki; Seto, Masaki; Sasaki, Satoshi; Shih-Chung, Huang; Ohba, Yusuke; Tokunaga, Norihito; Lee, Gil Nam; Rhim, Chul Yun; Yoon, Cheol Hwan; Cho, Suk Young; Skene, Robert; Yamamoto, Syunsuke; Satou, Yousuke; Kuno, Masako; Miyazaki, Takahiro; Nakagawa, Hideyuki; Okabe, Atsutoshi; Marui, Shogo; Aso, Kazuyoshi; Yoshida, Masato

    2016-01-28

    We report herein the discovery and optimization of 3-amino-1,5-dihydro-4H-pyrazolopyridin-4-one TYK2 inhibitors. High-throughput screening against TYK2 and JAK1-3 provided aminoindazole derivative 1 as a hit compound. Scaffold hopping of the aminoindazole core led to the discovery of 3-amino-1,5-dihydro-4H-pyrazolopyridin-4-one derivative 3 as a novel chemotype of TYK2 inhibitors. Interestingly, initial SAR study suggested that this scaffold could have a vertically flipped binding mode, which prompted us to introduce a substituent at the 7-position as a moiety directed toward the solvent-exposed region. Introduction of a 1-methyl-3-pyrazolyl moiety at the 7-position resulted in a dramatic increase in TYK2 inhibitory activity, and further optimization led to the discovery of 20. Compound 20 inhibited IL-23-induced IL-22 production in a rat PD assay, as well as inhibited IL-23 signaling in human PBMC. Furthermore, 20 showed selectivity for IL-23 signaling inhibition against GM-CSF, demonstrating the unique cytokine selectivity of the novel TYK2 inhibitor. PMID:26701356

  13. Conformational polymorphs of isobutyl-6-amino-5-cyano-2-methyl-4-phenyl-4H-pyran-3-carboxylate: spectroscopic, structural and DFT approach.

    PubMed

    Prasad, A Aditya; Kumar, C Udhaya; Prakasam, B Arul; Meenakshisundaram, S P

    2016-06-01

    The crystal structure of a new crystalline phase, polymorph (II) of isobutyl-6-amino-5-cyano-2-methyl-4-phenyl-4H-pyran-3-carboxylate, was accurately determined by single-crystal X-ray diffraction analysis providing a clean identification of polymorphic forms. Comparison with a known phase, referred to as polymorph (I), reveals the type of supramolecular assembly. Inter- and intramolecular hydrogen-bonding interactions exhibit various supramolecular architectures in crystal packing and these variations confirm well the polymorphism in isobutyl-6-amino-5-cyano-2-methyl-4-phenyl-4H-pyran-3-carboxylate (IAPC) crystal structure. Crystal cohesion is achieved by N-H...N, N-H...O and C-H...H-C interactions, responsible for the formation and strengthening of the supramolecular assembly. The objective of this investigation is to study crystalline forms which can offer enhanced physicochemical properties, and also to recognize the molecular orientations between such forms. The conformational polymorphs of IAPC were compared spectroscopically by FT-IR and FT-Raman. The bulk phases were studied by X-ray powder diffraction patterns. External morphology was investigated using scanning electron microscopic images. The molecular interactions were quantified using Hirshfeld surface and fingerprint analysis. Density functional theory (DFT) computations were used to optimize the structure. The optimized structure is further subjected to an analysis of Mulliken population, natural population and electrostatic potential. PMID:27240761

  14. Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

    NASA Astrophysics Data System (ADS)

    Puybaret, Renaud; Patriarche, Gilles; Jordan, Matthew B.; Sundaram, Suresh; El Gmili, Youssef; Salvestrini, Jean-Paul; Voss, Paul L.; de Heer, Walt A.; Berger, Claire; Ougazzaden, Abdallah

    2016-03-01

    We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5-8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

  15. Thermally Induced Reversible Double Phase Transitions in an Organic-Inorganic Hybrid Iodoplumbate C4H12NPbI3 with Symmetry Breaking.

    PubMed

    Liu, Guangfeng; Liu, Jie; Sun, Zhihua; Zhang, Zhenyi; Chang, Lei; Wang, Junling; Tao, Xutang; Zhang, Qichun

    2016-08-15

    A one-dimensional (1D) organic-inorganic hybrid iodoplumbate crystal (1, C4H12NPbI3, TMAPbI3) can undergo two reversible phase transitions as the temperature decreases. Its dynamic phase-transition behaviors were carefully studied by dielectric measurements, thermal analysis, and variable-temperature crystallographic studies. These results indicate that the phase transitions possess a disorder-order feature with a noncentrosymmetrical intermediate phase structure. Due to the existence of the ordered motion and reorientation of the C4H12N(+) cation, 1 undergoes two phase transitions: the first one from space group P63/m at room temperature to Pm at 163 K with symmetry breaking, and the second one from space group Pm at 163 K to P61 at 142 K with partial symmetry restoration. Our results indicate that there is an existence of a transitional structure with a low symmetry space group during the disorder-order-type phase transitions, which can provide us valuable information to deeply understand the disorder-order phase transition in organic-inorganic hybrids. PMID:27459127

  16. Synthesis and characterisation of new 4-oxo-N-(substituted-thiazol-2-yl)-4H-chromene-2-carboxamides as potential adenosine receptor ligands

    NASA Astrophysics Data System (ADS)

    Cagide, Fernando; Borges, Fernanda; Gomes, Ligia R.; Low, John Nicolson

    2015-06-01

    Chromones are 4H-benzopyran-4-one heterocycles that have been thoroughly studied due to their interesting biological activities. Thiazole based compounds have been used in therapeutics as antimicrobial, antiviral and as antifungal agents for a long time but, in the past decades, they have been identified as potent and selective ligands for adenosine receptor. In continuation of our project related to the syntheses of pharmacologically important heterocycles, a new series of chromone-thiazole hybrids have been designed as potential ligands for human adenosine receptors. In this context, new 4-oxo-N-(substituted-thiazol-2-yl)-4H-chromene-2-carboxamides were synthesized from chromone-2-carboxylic acid by two different amidation methods. The development of dissimilar synthetic approaches provided the possibility of working with diverse reaction conditions, namely with conventional heating and/or microwave irradiation. The structure of the compounds has been established on the basis of NMR and MS spectroscopy and X-ray crystallography. Relevant data related to the molecular geometry and conformation of the chromone-thiazole hybrids has been acquired which can be of the utmost importance to understand ligand-receptor binding.

  17. Surface-state dependent optical properties of OH-, F-, and H-terminated 4H-SiC quantum dots.

    PubMed

    Rashid, Marzaini; Tiwari, Amit K; Goss, J P; Rayson, M J; Briddon, P R; Horsfall, A B

    2016-08-01

    Density functional calculations are performed for OH-, F- and H-terminated 4H-SiC 10-20 Å diameter clusters to investigate the effect of surface species upon the optical absorption properties. H-termination results in a pronounced size-dependent quantum-confinement in the absorption, whereas F- and OH-terminations exhibit much reduced size dependent absorption due to surface states. Our findings are in good agreement with recent experimental studies, and are able to explain the little explored dual-feature photoluminescence spectra of SiC quantum dots. We propose that along with controlling the size, suitable surface termination is the key for optimizing optical properties of 4H-SiC quantum structures, such as might be exploited in optoelectronics, photovoltaics and biological applications. PMID:27430278

  18. Fabrication of Ohmic contact on semi-insulating 4H-SiC substrate by laser thermal annealing

    NASA Astrophysics Data System (ADS)

    Cheng, Yue; Lu, Wu-yue; Wang, Tao; Chen, Zhi-zhan

    2016-06-01

    The Ni contact layer was deposited on semi-insulating 4H-SiC substrate by magnetron sputtering. The as-deposited samples were treated by rapid thermal annealing (RTA) and KrF excimer laser thermal annealing (LTA), respectively. The RTA annealed sample is rectifying while the LTA sample is Ohmic. The specific contact resistance (ρc) is 1.97 × 10-3 Ω.cm2, which was determined by the circular transmission line model. High resolution transmission electron microscopy morphologies and selected area electron diffraction patterns demonstrate that the 3C-SiC transition zone is formed in the near-interface region of the SiC after the as-deposited sample is treated by LTA, which is responsible for the Ohmic contact formation in the semi-insulating 4H-SiC.

  19. Structural investigation of the seeding process for physical vapor transport growth of 4H-SiC single crystals

    NASA Astrophysics Data System (ADS)

    Ohtani, Noboru; Ohshige, Chikashi; Katsuno, Masakazu; Fujimoto, Tatsuo; Sato, Shinya; Tsuge, Hiroshi; Ohashi, Wataru; Yano, Takayuki; Matsuhata, Hirofumi; Kitabatake, Makoto

    2014-01-01

    Structural investigation of the seeding process for the physical vapor transport (PVT) growth of 4H-SiC single crystals was conducted by high-resolution x-ray diffraction (HRXRD) and synchrotron x-ray topography. Characteristic lattice plane bending behavior was observed in the near-seed regions of the grown crystals. The bending of the (112¯0) lattice plane was localized near the seed/grown crystal interface, and the (0001) basal plane bent convexly in the growth direction near the interface, indicative of the insertion of extra-half planes pointing toward the growth direction during the seeding process for PVT growth. This study discusses a possible mechanism for the observed lattice plane bending and sheds light on defect formation processes during the PVT growth of 4H-SiC single crystals.

  20. Synthesis, spectral characterization, and pharmacological importance of new 4H-1,4-benzothiazines, their sulfone analogues, and ribofuranosides.

    PubMed

    Gautam, Naveen; Garg, Ankita; Gautam, Dinesh Chand

    2015-01-01

    The present article describes the synthesis of new 4H-1,4-benzothiazines via condensation and oxidative cyclization of substituted 2-aminobenzenethiols with compounds containing active methylene groups. It is believed that the reaction proceeds via intermediary of the enaminoketone system. The sulfone derivatives were synthesized by oxidation of 4H-1,4-benzothiazines using 30% hydrogen peroxide in glacial acetic acid. Benzothiazines were used as bases to prepare ribofuranosides by treatment with a sugar derivative (β-D-ribofuranosyl-1-acetate-2,3,5-tribenzoate). The pharmacological importance of the synthesized compounds was evaluated by their, antimicrobial properties against various bacterial strains and fungal species. The structures of the compounds have been confirmed by spectral and chemical analysis. PMID:25513863

  1. Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

    SciTech Connect

    Dai, Chong-Chong; Zhou, Tian-Yu; University of Chinese Academy of Sciences, Beijing 100049 ; Liu, Xue-Chao Zhuo, Shi-Yi; Kong, Hai-Kuan; Yang, Jian-Hua; Shi, Er-Wei

    2014-04-15

    A sandwich structure of Ni/V/4H-SiC was prepared and annealed at different temperatures from 650 °C to 1050 °C. The electrical properties and microstructures were characterized by transmission line method, X-ray diffraction, Raman spectroscopy and transmission electron microscopy. A low specific contact resistance of 3.3 × 10{sup -5} Ω·cm{sup 2} was obtained when the Ni/V contact was annealed at 1050 °C for 2 min. It was found that the silicide changed from Ni{sub 3}Si to Ni{sub 2}Si with increasing annealing temperature, while the vanadium compounds appeared at 950 °C and their concentration increased at higher annealing temperature. A schematic diagram was proposed to explain the ohmic contact mechanism of Ni/V/4H-SiC structure.

  2. Chloride-based SiC growth on a-axis 4H-SiC substrates

    NASA Astrophysics Data System (ADS)

    Booker, Ian D.; Farkas, Ildiko; Ivanov, Ivan G.; Hassan, Jawad ul; Janzén, Erik

    2016-01-01

    SiC has, during the last few years, become increasingly important as a power-device material for high voltage applications. The thick, low-doped voltage-supporting epitaxial layer is normally grown by CVD on 4° off-cut 4H-SiC substrates at a growth rate of 5 - 10 μm / h using silane (SiH4) and propane (C3H8) or ethylene (C2H4) as precursors. The concentrations of epitaxial defects and dislocations depend to a large extent on the underlying substrate but can also be influenced by the actual epitaxial growth process. Here we will present a study on the properties of the epitaxial layers grown by a Cl-based technique on an a-axis (90° off-cut from c-direction) 4H-SiC substrate.

  3. First spectroscopic observation of gold(i) butadiynylide: Photodetachment velocity map imaging of the AuC4H anion.

    PubMed

    Visser, Bradley R; Addicoat, Matthew A; Gascooke, Jason R; Lawrance, Warren D; Metha, Gregory F

    2016-07-28

    The velocity map imaging technique was used in the investigation of gold(i) butadiynylide, AuC4H(-), with images recorded at two excitation wavelengths. The resultant photodetachment spectra show a well defined vibrational progression in the neutral with an energy spacing of 343 ± 3 cm(-1). The adiabatic electron affinity was determined to be 1.775 ± 0.005 eV and assigned to the X(1)Σ(+)←X(2)Σ(+) transition between the anionic and neutral ground states. Franck-Condon simulations performed on density functional theory optimized geometries assisted the assignment of linear geometries to the neutral and anion and the observed vibrational progression to that of the Au-C4H stretch. PMID:27475374

  4. Theoretical study of intermolecular interactions in CB4H8-HOX (X=F, Cl, Br, I) complexes.

    PubMed

    Derikvand, Zohreh; Zabardasti, Abedien; Azadbakht, Azadeh

    2015-11-01

    The molecular aggregation based on intermolecular interactions between CB4H8 and HOX (X=F, Cl, Br and I) with particular emphasis on their bonding characteristics have been investigated using second order Moller-Plesset perturbation (MP2) method with aug-cc-pVDZ basis set. Different kinds of interactions including hydrogen bond (HB; H⋯O, XH; H⋯X), dihydrogen bond (DiHB; H⋯H) and non-classical B-B⋯H interactions were found between CB4H8 and HOX molecules. The structures of complexes have been analyzed using AIM and natural bond orbital methodologies. Good correlations have been found between the interaction energies (SE), the second-order perturbation energies E((2)), and the charge transfer qCT in the studied systems. PMID:26103431

  5. Effect of electron irradiation on carrier removal rate in silicon and silicon carbide with 4H modification

    SciTech Connect

    Kozlovskii, V. V.; Emtsev, V. V.; Emtsev, K. V.; Strokan, N. B.; Ivanov, A. M.; Lomasov, V. N.; Oganesyan, G. A.; Lebedev, A. A.

    2008-02-15

    Comparative study of the effect of successive (up to fluences of 3 Multiplication-Sign 10{sup 16} cm{sup -2}) irradiation with 900 keV electrons of samples made of FZ-Si and 4H-SiC (CVD) has been performed for the first time. Measurements on initial and irradiated samples were made using the van der Pauw method for silicon and the capacitance-voltage technique at a frequency of 1 kHz for silicon carbide. In addition, the spectrum of the defect levels introduced was monitored by the DLTS method for SiC. The carrier removal and defect introduction rates were determined for the two materials. It was found that the rates of defect introduction into FZ-Si and 4 H-SiC (CVD) are close to eachy other ({approx}0.1 cm{sup -1}), which is largely due to the almost identical threshold energies of defect generation.

  6. Effect of electron irradiation on carrier removal rate in silicon and silicon carbide with 4H modification

    SciTech Connect

    Kozlovskii, V. V.; Emtsev, V. V. Emtsev, K. V.; Strokan, N. B.; Ivanov, A. M.; Lomasov, V. N.; Oganesyan, G. A.; Lebedev, A. A.

    2008-02-15

    Comparative study of the effect of successive (up to fluences of 3 x 10{sup 16} cm{sup -2}) irradiation with 900 keV electrons of samples made of FZ-Si and 4H-SiC (CVD) has been performed for the first time. Measurements on initial and irradiated samples were made using the van der Pauw method for silicon and the capacitance-voltage technique at a frequency of 1 kHz for silicon carbide. In addition, the spectrum of the defect levels introduced was monitored by the DLTS method for SiC. The carrier removal and defect introduction rates were determined for the two materials. It was found that the rates of defect introduction into FZ-Si and 4 H-SiC (CVD) are close to eachy other ({approx}0.1 cm{sup -1}), which is largely due to the almost identical threshold energies of defect generation.

  7. Synthesis, bioassay, and QSAR study of bronchodilatory active 4H-pyrano[3,2-c]pyridine-3-carbonitriles.

    PubMed

    Girgis, Adel S; Saleh, Dalia O; George, Riham F; Srour, Aladdin M; Pillai, Girinath G; Panda, Chandramukhi S; Katritzky, Alan R

    2015-01-01

    A statistically significant QSAR model describing the bioactivity of bronchodilatory active 4H-pyrano[3,2-c]pyridine-3-carbonitriles (N = 41, n = 8, R(2) = 0.824, R(2)cv = 0.724, F = 18.749, s(2) = 0.0018) was obtained employing CODESSA-Pro software. The bronchodilatory active 4H-pyrano[3,2-c]pyridine-3-carbonitriles 17-57 were synthesized through a facile approach via reaction of 1-alkyl-4-piperidones 1-4 with ylidenemalononitriles 5-16 in methanol in the presence of sodium. The bronchodilation properties of 17-57 were investigated in vitro using isolated guinea pig tracheal rings pre-contracted with histamine (standard method) and compared with theophylline (standard reference). Most of the compounds synthesized exhibit promising bronchodilation properties especially, compounds 25 and 28. PMID:25462283

  8. Boundary-Spanning Actors in Urban 4-H: An Action Research Case Study

    ERIC Educational Resources Information Center

    David, Victoria Dotson

    2014-01-01

    Today's Cooperative Extension organization continues to face challenges of providing relevant, quality programming in urban communities. Challenges include the ability to build capacity in Extension's urban youth educators to assess and interpret the unique, variable needs of urban clients and to communicate effectively the identified…

  9. Water Quality: Water Education for Teachers. A 4-H School Enrichment Program.

    ERIC Educational Resources Information Center

    Powell, G. Morgan; Kling, Emily B.

    This looseleaf notebook is a teacher resource package that is designed for enrichment program use. It contains five units dealing with water quality: (1) The Water Cycle; (2) Our Water Supply; (3) Waste/Water Treatment; (4) Water Conservation; (5) Water Pollution. The units provide background information, experiments, stories, poems, plays, and…

  10. 4-H Wetland Wonders: A Water Quality Curriculum for Grades 4 and 5. Leader Guide.

    ERIC Educational Resources Information Center

    Oregon State Univ., Corvallis. Extension Service.

    This document provides a water quality curriculum guide for grades 4 and 5. Contents include: (1) Wetlands Wonders Resource Library; (2) Introduction to Water Quality and Wetlands; (3) Water Words; (4) The Water Cycle; (5) Watersheds: Rain Coming and Going; (6) The Water Detective; (7) Ground Water; (8) What's Soil Got To Do with It?; (9) In the…

  11. Developing Evaluation Capacity in Extension 4-H Field Faculty: A Framework for Success

    ERIC Educational Resources Information Center

    Arnold, Mary E.

    2006-01-01

    Developing evaluation capacity in organizations is a complex and multifaceted task. This article outlines a framework for building evaluation capacity. The framework is based on four strategic methods for teaching evaluation: (a) using logic models for sound program planning, (b) providing one-on-one help, (c) facilitating small-team collaborative…

  12. Evaluating the Mentor-Mentee Relationship in the 4-H Tech Wizards Program

    ERIC Educational Resources Information Center

    Toelle, Andy; Terry, Bryan D.; Broaddus, Brent; Kent, Heather; Barnett, Lauren

    2015-01-01

    Youth rely on mentors to provide camaraderie, encouragement, and guidance. The authors asserted that the measurement of youth-mentor relationship would vastly improve the reaching effects of mentorship and expose areas of potential improvement. A questionnaire was given to youth at the beginning and end of a small group mentoring program. The…

  13. Trees: Dead or Alive. 4-H Leader's Guide 147-L-22.

    ERIC Educational Resources Information Center

    Krasny, Marianne E.

    This illustrated leader's guide to exploring trees and forests provides activities which emphasize careful observation of trees and the living things associated with them for youths age 9 and older. Introductory information for leaders explains the uses for trees and the role of trees in the ecosystem. It also gives suggestions for leaders to…

  14. Recycling: Mining Resources from Trash. 4-H Leader's/Teacher's Guide.

    ERIC Educational Resources Information Center

    Bonhotal, Jean F.

    This guide is designed for adult volunteer leaders, camp counselors, and teachers who want to explore the subject of recycling with youth. An introduction explores the waste disposal options of reducing, reusing, and recycling, and reasons for recycling. Additional background information is provided on common solid waste and how it can be reused…

  15. Helping Youth at Risk: 4-H and Cooperative Extension Venture into Child Care.

    ERIC Educational Resources Information Center

    Junge, Sharon; And Others

    1994-01-01

    As part of its "Youth-at-Risk" initiative, the national Cooperative Extension System assisted communities across the nation in setting up school-age child care (SACC) programs that provide after-school care to at-risk students. Evaluation of 31 SACC programs in California revealed increased prosocial behavior, decreased problem behavior, and…

  16. Characterization of tungsten-nickel simultaneous Ohmic contacts to p- and n-type 4H-SiC

    NASA Astrophysics Data System (ADS)

    Kragh-Buetow, K. C.; Okojie, R. S.; Lukco, D.; Mohney, S. E.

    2015-10-01

    Ohmic contacts to p- and n-type 4H-SiC using refractory alloyed W:Ni thin films were investigated. Transfer length measurement test structures to p-type 4H-SiC (NA = 3 × 1020 cm-3) revealed Ohmic contacts with specific contact resistances, ρc, of ˜10-5 Ω cm2 after 0.5 h annealing in argon at temperatures of 1000 °C, 1100 °C, 1150 °C, and 1200 °C. Contacts fabricated on n-type 4H-SiC (ND = 2 × 1019 cm-3) by similar methods were shown to have similar specific contact resistance values after annealing, demonstrating simultaneous Ohmic contact formation for W:Ni alloys on 4H-SiC. The lowest ρc values were (7.3 ± 0.9) × 10-6 Ω cm2 for p-SiC and (6.8 ± 3.1) × 10-6 Ω cm2 for n-SiC after annealing at 1150 °C. X-ray diffraction shows a cubic tungsten-nickel-carbide phase in the Ohmic contacts after annealing as well as WC after higher temperatures. Auger electron spectroscopy depth profiles support the presence of metal carbide regions above a nickel and silicon-rich region near the interface. X-ray energy dispersive spectroscopy mapping showed tungsten-rich and nickel-rich regions after annealing at 1100 °C and above. W:Ni alloys show promise as simultaneous Ohmic contacts to p- and n-SiC, offering low and comparable ρc values along with the formation of WxNiyC.

  17. Synthesis of 4H-chromenes by an unexpected, K3PO4-mediated intramolecular Rauhut-Currier type reaction.

    PubMed

    Bhunia, Anup; Yetra, Santhivardhana Reddy; Gonnade, Rajesh G; Biju, Akkattu T

    2016-06-28

    In an attempt to develop the umpolung of Michael acceptors using chalcones having an enoate moiety under N-heterocyclic carbene (NHC) catalysis, a K3PO4-mediated intramolecular Rauhut-Currier type reaction was observed. This C(sp(2))-C(sp(2)) coupling reaction afforded the biologically important 4H-chromenes in moderate to good yields. It is likely that the enol ether functionality acts as the nucleophilic trigger in this reaction. PMID:27109318

  18. Evaluation of sintering effects on SiC incorporated UO2 kernels under Ar and Ar-4%H2 environments

    SciTech Connect

    Silva, Chinthaka M; Lindemer, Terrence; Hunt, Rodney Dale; Collins, Jack Lee; Terrani, Kurt A; Snead, Lance Lewis

    2013-01-01

    Silicon carbide (SiC) is suggested as an oxygen getter in UO2 kernels used for TRISO particle fuels to lower oxygen potential and prevent kernel migration during irradiation. Scanning electron microscopy and X-ray diffractometry analyses performed on sintered kernels verified that internal gelation process can be used to incorporate SiC in urania fuel kernels. Sintering in either Ar or Ar-4%H2 at 1500 C lowered the SiC content in the UO2 kernels to some extent. Formation of UC was observed as the major chemical phase in the process, while other minor phases such as U3Si2C2, USi2, U3Si2, and UC2 were also identified. UC formation was presumed to be occurred by two reactions. The first was the SiC reaction with its protective SiO2 oxide layer on SiC grains to produce volatile SiO and free carbon that subsequently reacted with UO2 to form UC. The second process was direct UO2 reaction with SiC grains to form SiO, CO, and UC, especially in Ar-4%H2. A slightly higher density and UC content was observed in the sample sintered in Ar-4%H2, but the use of both atmospheres produced kernels with ~95% of theoretical density. It is suggested that incorporating CO in the sintering gas would prevent UC formation and preserve the initial SiC content.

  19. Electrical and optical properties of stacking faults introduced by plastic deformation in 4H-SiC

    SciTech Connect

    Pichaud, B.; Regula, G.; Yakimov, E. B.

    2014-02-21

    The electrical and optical properties of stacking faults (SFs) introduced by plastic deformation in 4H-SiC were studied by Electron Beam Induced Current (EBIC) and cathodoluminescence (CL) methods. Partial dislocations and stacking faults in the (0001) glide planes perpendicular to the surface were introduced in n-type 4H-SiC under a well-controlled state of stress by cantilever bending at 550°C. CL measurements allow determining the multiplicity of the SFs (single or double). It is observed that the overwhelming majority of stacking faults are double Shockley type SFs (CL emission at 504 nm) that correlates well with previously published high resolution transmission electron microscopy (HRTEM) investigations. However, single Shockley type SFs (CL emission at 422 nm) of much smaller lengths are also observed in some areas near the scratched region from where the defects are nucleated. This suggests that the velocity of partial dislocation pairs under a given applied stress could be higher than that of single partial dislocations. It is also shown that in the EBIC mode, SFs produce a strong bright contrast, which can be explained by considering the SFs in 4H-SiC to be quantum wells of II type.

  20. Growth and surface analysis of SiO2 on 4H-SiC for MOS devices

    NASA Astrophysics Data System (ADS)

    Kodigala, Subba Ramaiah; Chattopadhyay, Somnath; Overton, Charles; Ardoin, Ira; Gordon, B. J.; Johnstone, D.; Roy, D.; Barone, D.

    2015-03-01

    The SiO2 layers have been grown onto C-face and Si-face 4H-SiC substrates by two different techniques such as wet thermal oxidize process and sputtering. The deposition recipes of these techniques are carefully optimized by trails and error method. The growth effects of SiO2 on the C-face and Si-face 4H-SiC substrates are thoroughly investigated by AFM analysis. The growth mechanism of different species involved in the growth process of SiO2 by wet thermal oxide is now proposed by adopting two body classical projectile scattering. This mechanism drives to determine growth of secondary phases such as α-CH nano-islands in the grown SiO2 layer. The effect of HF etchings on the SiO2 layers grown by both techniques and on both the C-face and Si-face substrates are legitimately studied. The thicknesses of the layers determined by AFM and ellipsometry techniques are widely promulgated. The MOS capacitors are made on the Si-face 4H-SiC wafers by wet oxidation and sputtering processes, which are studied by capacitance versus voltage (CV) technique. From CV measurements, the density of trap states with variation of trap level for MOS devices is estimated.

  1. Atomistic Simulations on the Thermal Stability of the Antisite Pair in 3C- and 4H-SiC

    SciTech Connect

    Posselt, Matthias; Gao, Fei; Weber, William J.

    2006-03-31

    The thermal stability of the first-neighbor antisite pair configurations in 3C- and 4H-SiC is investigated by a comprehensive atomistic study. At first the structure and energetics of these defects is determined in order to check the accuracy of the Gao-Weber interatomic potential used. The results are comparable with literature data obtained by the density-functional theory. Then, the lifetime of the antisite pair configurations is calculated for temperatures between 800 and 2500 K. Both in 3C- and 4H-SiC the thermal stability of the antisite pairs is rather low. In contrast to previous theoretical interpretations, the antisite pair can be therefore not correlated with the DI photoluminescence center that is stable to above 2000 K. The atomic mechanisms during the recombination of the antisite pair in 3C-SiC and of three antisite pair configurations in 4H-SiC is a modified concerted exchange. Due to the different sizes of the silicon and the carbon atoms, this process is not identical with the concerted exchange in Si. Two intermediate metastable configurations found during the recombination are similar to the bond defect in Si. Since the SiC lattice contains two types of atoms, there are also two different types of bond defects. The two bond defects can be considered as the result of the incomplete recombination of a carbon vacancy and a neighboring mixed dumbbell interstitial. For selected temperatures the thermal stability of the antisite pair in 3C-SiC is investigated by molecular dynamics simulations that are based on the density-functional theory. Their results are very similar to those of the atomistic study, i.e. the Gao-Weber potential describes the antisite pair and its recombination reasonably well. The antisite pair in 4H-SiC with the two atoms on hexagonal sites has a slightly different formation energy than the other three antisite pair configurations in 4H-SiC. Its lifetime shows another dependence on the temperature, and its recombination is

  2. The protection of high efficiency solar thermal collectors using the ternary mixture MnSO4-H2O-C2H6O2

    NASA Astrophysics Data System (ADS)

    Stephens, R. B.; Whitcomb, J.

    1980-10-01

    The solubility of MnSO4 in water declines as the temperature of the solution is raised. This effect can be used to coat the absorber plate of a solar collector with a layer of fine white crystals which scatter light away from the absorber if it exceeds a predetermined temperature. The solubility limits of the ternary system MnSO4-H2O-C2H6O2 show that ethylene glycol added to the mix provided adequate antifreeze protection and also increased the coating ability of the solution. It was also found that the kinetics of nucleation and crystallization for this system are so slow that it will remain indefinitely in the supersaturated state; crystals only precipitate upon the initiation of boiling.

  3. Molecular structure, vibrational spectra, MEP, HOMO-LUMO and NBO analysis of Hf(SeO3)(SeO4)(H2O)4

    NASA Astrophysics Data System (ADS)

    Yankova, Rumyana; Genieva, Svetlana; Halachev, Nenko; Dimitrova, Ginka

    2016-02-01

    Hf(SeO3)(SeO4)(H2O)4 was obtained with the hydrothermal synthesis. The geometry optimization of this molecule was done by Density Functional Theory (DFT/B3LYP) method with 6-31G(d) basis set and LANL2DZ for Hf. The experimental infrared spectrum was compared with calculated and complete vibrational assignment was provided. The bond orders and the electronic properties of the molecule were calculated. The natural bond orbital analysis (NBO) was performed in order to study the intramolecular bonding interactions among bonds and delocalization of unpaired electrons. The calculated highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) with frontier orbital gap were presented. The electrostatic potential was calculated in order to investigate the reaction properties of the molecule. The thermodynamic properties of the studied compound at different temperatures were calculated.

  4. Prestaining of glycoproteins in SDS-PAGE via 4H-[1]-Benzopyrano[4,3-b]thiophene-2-carboxylic acid hydrazide with weak influence on protein mobility.

    PubMed

    Zhu, Zhongxin; Zhou, Xuan; Wang, Yang; Yu, Qing; Zhu, Xinliang; Niu, Chao; Cong, Weitao; Jin, Litai

    2014-12-01

    A new fluorescent prestaining method for gel-separated glycoproteins in 1D and 2D SDS-PAGE was developed by using 4H-[1]-Benzopyrano[4,3-b]thiophene-2-carboxylic acid hydrazide (BH). The prestained gels were readily imaged after electrophoresis without any time-consuming steps needed for poststain. As low as 4-8 ng glycoproteins (transferrin, α1-acid glycoprotein) could be selectively detected, which is comparable to the most commonly used Pro-Q Emerald 488 glycoprotein stain. In addition, subsequent study of deglycosylation, glycoprotein affinity chromatography, and LC-MS/MS analysis were performed to confirm the specificity of the newly developed method. As a result, BH prestain provides a new choice for quick, sensitive, specific, economical, and MS compatible visualization of gel-separated glycoproteins. PMID:25229714

  5. Fluorescent staining of glycoproteins in sodium dodecyl sulfate polyacrylamide gels by 4H-[1]-benzopyrano[4,3-b]thiophene-2-carboxylic acid hydrazide.

    PubMed

    Zhu, Zhongxin; Zhou, Xuan; Wang, Yang; Chi, Lisha; Ruan, Dandan; Xuan, Yuanhu; Cong, Weitao; Jin, Litai

    2014-06-01

    A fluorescent detection method for glycoproteins in SDS-PAGE by using 4H-[1]-benzopyrano[4,3-b]thiophene-2-carboxylic acid hydrazide (BH) was developed in this study. As low as 4-8 ng glycoproteins (transferrin, α1-acid glycoprotein) could be specifically detected by the BH staining method, which is twofold more sensitive than that of the most commonly used Pro-Q Emerald 488 glycoprotein stain. Furthermore, the specificity of the newly developed stain for glycoproteins was demonstrated by 1-D and 2-D SDS-PAGE, deglycosylation, glycoprotein affinity enrichment and LC-MS/MS, respectively. According to the results, it is concluded that BH stain may provide new choices for convenient, sensitive, specific and economic visualization of gel-separated glycoproteins. PMID:24712021

  6. High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer

    NASA Astrophysics Data System (ADS)

    Cho, Doohyung; Sim, Seulgi; Park, Kunsik; Won, Jongil; Kim, Sanggi; Kim, Kwangsoo

    2015-12-01

    In this paper, a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier with an enhanced sidewall layer (ESL) is proposed. The proposed structure has a high doping concentration at the trench sidewall. This high doping concentration improves both the reverse blocking and forward characteristics of the structure. The ESL-TMBS rectifier has a 7.4% lower forward voltage drop and a 24% higher breakdown voltage. However, this structure has a reverse leakage current that is approximately three times higher than that of a conventional TMBS rectifier owing to the reduction in energy barrier height. This problem is solved when ESL is used partially, since its use provides a reverse leakage current that is comparable to that of a conventional TMBS rectifier. Thus, the forward voltage drop and breakdown voltage improve without any loss in static and dynamic characteristics in the ESL-TMBS rectifier compared with the performance of a conventional TMBS rectifier.

  7. Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring

    NASA Astrophysics Data System (ADS)

    Wang, Xiang-Dong; Deng, Xiao-Chuan; Wang, Yong-Wei; Wang, Yong; Wen, Yi; Zhang, Bo

    2014-05-01

    This paper describes the successful fabrication of 4H-SiC junction barrier Schottky (JBS) rectifiers with a linearly graded field limiting ring (LG-FLR). Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm2 (about 80% of the theoretical value). Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termination, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length.

  8. SWSextantis stars: the dominant population of cataclysmic variables with orbital periods between 3 and 4h

    NASA Astrophysics Data System (ADS)

    Rodríguez-Gil, P.; Gänsicke, B. T.; Hagen, H.-J.; Araujo-Betancor, S.; Aungwerojwit, A.; Allende Prieto, C.; Boyd, D.; Casares, J.; Engels, D.; Giannakis, O.; Harlaftis, E. T.; Kube, J.; Lehto, H.; Martínez-Pais, I. G.; Schwarz, R.; Skidmore, W.; Staude, A.; Torres, M. A. P.

    2007-06-01

    We present time-series optical photometry of five new cataclysmic variables (CVs) identified by the Hamburg Quasar Survey (HQS). The deep eclipses observed in HS 0129+2933 (= TT Tri), HS 0220+0603 and HS 0455+8315 provided very accurate orbital periods of 3.35129827(65), 3.58098501(34) and 3.56937674(26) h, respectively. HS 0805+3822 shows grazing eclipses and has a likely orbital period of 3.2169(2) h. Time-resolved optical spectroscopy of the new CVs (with the exception of HS 0805+3822) is also presented. Radial velocity studies of the Balmer emission lines provided an orbital period of 3.55 h for HS 1813+6122, which allowed us to identify the observed photometric signal at 3.39 h as a negative superhump wave. The spectroscopic behaviour exhibited by all the systems clearly identifies them as new SW Sextantis (SW Sex) stars. HS 0220+0603 shows unusual NII and SiII emission lines suggesting that the donor star may have experienced nuclear evolution via the CNO cycle. These five new additions to the class increase the number of known SW Sex stars to 35. Almost 40 per cent of the total SW Sex population do not show eclipses, invalidating the requirement of eclipses as a defining characteristic of the class and the models based on a high orbital inclination geometry alone. On the other hand, as more SW Sex stars are identified, the predominance of orbital periods in the narrow 3-4.5 h range is becoming more pronounced. In fact, almost half the CVs which populate the 3-4.5 h period interval are definite members of the class. The dominance of SW Sex stars is even stronger in the 2-3 h period gap, where they make up 55 per cent of all known gap CVs. These statistics are confirmed by our results from the HQS CVs. Remarkably, 54 per cent of the Hamburg nova-like variables have been identified as SW Sex stars with orbital periods in the 3-4.5 h range. The observation of this pile-up of systems close to the upper boundary of the period gap is difficult to reconcile with the

  9. 2D Electric field imagery in 4H-SiC power diodes using OBIC technique

    NASA Astrophysics Data System (ADS)

    Hamad, Hassan; Bevilacqua, Pascal; Planson, Dominique; Raynaud, Christophe; Tournier, Dominique; Vergne, Bertrand; Lazar, Mihai; Brosselard, Pierre

    2015-11-01

    Wide band gap semiconductors are more and more used, especially to design high voltage devices. However, some devices show lower breakdown voltages than those predicted in theory. These early breakdown are in general due to imperfections in the peripheral protections of the active junction. The aim of these protections is to reduce electric field peaks at the periphery of the junction. Thus, it is important to study the electric field distribution on the device periphery to detect any protection weakness. This paper presents a 2D electric field imagery using OBIC (optical beam induced current) technique. 2D cartographies are realized on JTE (junction termination extension) protected diodes in order to display electric field on diode peripheries. Other measurements are also performed on circular avalanche diodes protected with a MESA etching and provided with optical window. In both cases, OBIC techniques is demonstrated to be an efficient method to obtain electric field distribution within the device and to locate defects. Contribution to the topical issue "Electrical Engineering Symposium (SGE 2014)", edited by Adel Razek

  10. Advanced NaBH4/H2O2 Fuel Cell for Space Applications

    NASA Astrophysics Data System (ADS)

    Miley, George H.; Kim, Kyu-Jung; Luo, Nie; Shrestha, Prajakti Joshi

    2009-03-01

    Fuel cells have played an important role in NASA's space program starting with the Gemini space program. However, improved fuel cell performance will be needed to enable demanding future missions. An advanced fuel cell (FC) using liquid fuel and oxidizer is being developed by U of IL/NPL team to provide air independence and to achieve higher power densities than normal H2/O2 fuel cells (Lou et al., 2008; Miley, 2007). Hydrogen peroxide (H2O2) is used in this FC directly at the cathode (Lou and Miley, 2004). Either of two types of reactant, namely a gas-phase hydrogen or an aqueous NaBH4 solution, is utilized as fuel at the anode. Experiments with both 10-W single cells and 500-W stacks demonstrate that the direct utilization of H2O2 and NaBH4 at the electrodes result in >30% higher voltage output compared to the ordinary H2/O2 FC (Miley, 2007). Further, the use of this combination of all liquid fuels provides—from an operational point of view—significant advantages (ease of storage, reduced pumping requirements, simplified heat removal). This design is inherently compact compared to other fuel cells that use gas phase reactants. This results in a high overall system (including fuel tanks, pumps and piping, waste heat radiator) power density. Further, work is in progress on a regenerative version which uses an electrical input, e.g. from power lines or a solar panel to regenerate reactants.

  11. CERN’s Linac4 H{sup −} sources: Status and operational results

    SciTech Connect

    Lettry, J. Aguglia, D.; Andersson, P.; Bertolo, S.; Butterworth, A.; Coutron, Y.; Dallocchio, A.; David, N.; Chaudet, E.; Fink, D.; Gil-Flores, J.; Garlasche, M.; Grudiev, A.; Guida, R.; Hansen, J.; Haase, M.; Jones, A.; Koszar, I.; Machado, C.; Mastrostefano, C.; and others

    2015-04-08

    Two volume sources equipped with DESY and CERN plasma generators and a low voltage electron dump were operated at 45 kV in the Linac4 tunnel and on a dedicated test stand. These volume sources delivered approximately 20 mA and ensured the commissioning of the Radio Frequency Quadrupole accelerator and of the first section of the Drift Tube Linac. CERN’s prototype of a cesiated surface source equipped with this electron dump was operated continuously from November 2013 to April 2014 on the ion source test stand and is being commissioned in the Linac4 tunnel. Before cesiation, the prototype conditioned in volume mode provided up to 30 mA H{sup −} beam. Short cesiations, of the order of 10 mg effectively reduced the intensity of co-extracted electrons down to 2 - 8 times the H{sup −} current; this cesiated surface operation mode delivered up to 60 mA H{sup −} beam. An H{sup −} beam of the order of 40 mA was sustained up to four weeks operation with 500 μs pulses at 1.2s spacing. A new extraction was designed to match these beam properties. A copy of BNL’s magnetron produced at CERN was tested at BNL and delivered at 40 kV H{sup −} beam exceeding Linac4’s nominal intensity of 80 mA. In this contribution, the performances, dynamic response to cesiation, stability and availability of these prototypes are described. The needed optimization of the emittance of H{sup −} beam above 40 mA is presented, which requires an evolution of the front end that encompasses implementation of a large ceramic insulator.

  12. Static and Switching Characteristics of a 4H-SiC Based BJT to 200 C

    NASA Technical Reports Server (NTRS)

    Niedra, Janis M.; Schwarze, Gene E.

    2006-01-01

    Static curves and resistive load switching characteristics of a 600 V, 4 A rated, SiC-based NPN bipolar power transistor (BJT) were observed at selected temperatures from 23 to 200 C. All testing was done in a pulse mode at low duty cycle (approx. 0.1 percent). Turn-on was driven by an adjustable base current pulse and turn-off was accelerated by a negative base voltage pulse of either 7 or 0.6 V. Switching observations were done at base drive currents (I(sub B)) up to 400 mA and collector currents (I(sub C)) up to 4 A, using a 100 OMEGA non-inductive load. At I(sub B) = 400 mA and I(sub C) = 4 A, turn-on times typically varied from 81 to 97 ns, over temperatures from 23 to 200 C. As expected, lowering the base drive greatly extended the turn-on time. Similarly, decreasing the load current to I(sub C) = 1 A with I(sub B) = 400 mA produced turn-on times as short as 30 ns. Over the 23 to 200 C range, with I(sub B) = 400 mA and I(sub C) = 4 A, turn-off times were in the range of 61 to 77 ns with the 7 V sweep-out and 130 to 150 ns with the 0.6 V sweep-out. At a fixed temperature and I(sub C), the turn-off time decreased slightly with decreasing I(sub B), for I(sub B) sufficient to still provide full turn-on. The ratio of conduction to switching losses is estimated, based on the observed I(sub C) transition times and static curves. An estimate at 200 kHz and a 50 percent duty cycle shows that under practicable conditions the two losses can be comparable. Hence the evidence obtained does not support the occasionally voiced concern of necessarily unacceptably high conduction losses in SiC-based BJTs.

  13. Synthesis and crystal structure of the [Co{sub 2}(Nicotinamide){sub 4}(C{sub 4}H{sub 9}COO){sub 4}(H{sub 2}O)] complex

    SciTech Connect

    Sadikov, G. G. Antsyshkina, A. S.; Koksharova, T. V.; Gritsenko, I. S.; Sergienko, V. S.

    2007-09-15

    The [Co{sub 2}L{sub 4}(C{sub 4}H{sub 9}COO){sub 4}(H{sub 2}O)] coordination compound of cobalt(II) valerate with nicotinamide (L) is synthesized and studied by IR spectroscopy. The crystal structure of the synthesized compound is determined. The crystals are triclinic, and the unit cell parameters are as follows: a = 10.2759(10) A, b = 16.3858(10) A, c = 16.4262(10) A, {alpha} = 100.538(10) deg., {beta} = 101.199(10) deg., {gamma} = 90.813 (10) deg., Z = 2, and space group P1-bar. The structural units of the crystal are dimeric molecular complexes in which pairs of cobalt atoms are linked by triple bridges formed by oxygen atoms of two bidentately coordinated valerate anions and a water molecule. The octahedral coordination of each cobalt atom is complemented by the pyridine nitrogen atoms of two nicotinamide ligands and the oxygen atom of the monodentate valerate group. The hydrocarbon chains of the valerate anions are disordered over two or three positions each.

  14. Synthesis, mesomorphic properties and X-ray diffraction studies on 7-alkyloxy-3-(4-alkyloxyphenyl-4H-1-benzopyran-4-one: Crystal structure of 7-hexyloxy-3-(4-hexyloxyphenyl)-4H-1-benzopyran-4-one

    NASA Astrophysics Data System (ADS)

    Yeap, Guan-Yeow; Yam, Wan-Sinn; Dobrzyscky, Lucasz; Gorecka, Ewa; Takeuchi, Daisuke; Boey, Peng-Lim; Mahmood, Wan Ahmad Kamil; Ito, Masato M.

    2009-11-01

    Eight new compounds, 7-alkyloxy-3-(4-alkyloxyphenyl)-4H-1-benzopyran-4-one incorporating isoflavone core and identical terminal side chains, OR (where R = C nH 2n+1 with n ranging from 4 to 18 in even parity) have been synthesized and isolated. The thermal stability in relation to the phase behaviour and respective enthalpy values of these compounds were analyzed using differential scanning calorimetry. The texture of the preferred molecular orientation at different temperatures was observed under polarized light wherein all compounds exhibited nematic (N), smectic A (SmA) and smectic C (SmC) phases. The difference in mesogenicity of these compounds was also investigated from the viewpoints of conformation and polarity of the side chains which contributed remarkably towards the change in the intermolecular interaction within the mesophase. X-ray diffraction technique was employed to investigate the molecular packing associated with the intermolecular interaction as well as the correlation between the thermal behaviour of these compounds with their anisotropy properties within a mesophase. The molecular structure of compound 7-hexyloxy-3-(4-hexyloxyphenyl)-4H-1-benzopyran-4-one in crystal phase was confirmed by single-crystal X-ray diffraction.

  15. Structure, ferroelectric ordering, and semiempirical quantum calculations of lanthanide based metal-organic framework: [Nd(C4H5O6)(C4H4O6)][3H2O

    NASA Astrophysics Data System (ADS)

    Ahmad, Bhat Zahoor; Want, Basharat

    2016-04-01

    We investigate the structure and ferroelectric behavior of a lanthanide based metal-organic framework (MOF), [Nd(C4H5O6)(C4H4O6)][3H2O]. X-ray crystal structure analyses reveal that it crystallizes in the P41212 space group with Nd centres, coordinated by nine oxygen atoms, forming a distorted capped square antiprismatic geometry. The molecules, bridged by tartrate ligands, form a 2D chiral structure. The 2D sheets are further linked into a 3D porous framework via strong hydrogen-bonding scheme (O-H…O ≈ 2.113 Å). Dielectric studies reveal two anomalies at 295 K and 185 K. The former is a paraelectric-ferroelectric transition, and the later is attributed to the freezing down of the motion of the hydroxyl groups. The phase transition is of second order, and the spontaneous polarization in low temperature phase is attributed to the ordering of protons of hydroxyl groups. The dielectric nonlinearity parameters have been calculated using Landau- Devonshire phenomenological theory. In addition, the most recent semiempirical models, Sparkle/PM7, Sparkle/RM1, and Sparkle/AM1, are tested on the present system to assay the accuracy of semiempirical quantum approaches to predict the geometries of solid MOFs. Our results show that Sparkle/PM7 model is the most accurate to predict the unit cell structure and coordination polyhedron geometry. The semiempirical methods are also used to calculate different ground state molecular properties.

  16. Etching Characteristics of ZnO and Al-Doped ZnO in Inductively Coupled Cl2/CH4/H2/Ar and BCl3/CH4/H2/Ar Plasmas

    NASA Astrophysics Data System (ADS)

    Lee, Hack Joo; Kwon, Bong Soo; Kim, Hyun Woo; Kim, Seon Il; Yoo, Dong-Geun; Boo, Jin-Hyo; Lee, Nae-Eung

    2008-08-01

    ZnO and Al-doped ZnO (AZO) were etched in Cl2/CH4/H2/Ar (Cl2-based) and BCl3/CH4/H2/Ar (BCl3-based), inductively coupled plasmas (ICPs) and their etching characteristics were compared by varying the Cl2/(Cl2+CH4) and BCl3/(BCl3+CH4) flow ratios, top electrode power and dc self-bias voltage (Vdc). The etch rates of both ZnO and AZO layers were higher in the Cl2-based chemistry than in the BCl3-based chemistry. The AZO and ZnO etch rates were increased and decreased, respectively, with increasing Cl2 or BCl3 flow ratio. Optical emission measurements of the radical species in the plasma and surface binding states by optical emission spectroscopy (OES) and X-ray photoelectron spectroscopy (XPS), respectively, indicated that, with increasing Cl2 or BCl3 flow ratio; the effective removal of Al in the AZO enhanced the AZO etch rate, whereas the reduced removal of Zn by the Zn(CHx)y products reduced the ZnO etch rate.

  17. Mass spectrum of the 1-butene-3-yne-2-yl radical (i-C4H3; X2A')

    NASA Astrophysics Data System (ADS)

    Guo, Ying; Gu, Xibin; Kaiser, Ralf I.

    2006-03-01

    The crossed molecular beams method has been applied to produce the 1-butene-3-yne-2-yl radical, i-C4H3(X2A') under single collision conditions via the reaction of dicarbon molecules with ethylene. We recorded time-of-flight spectra of the radical at the center-of-mass angle (28.0°) of the parent ion (m/z = 51; C4H3+) and of the fragments at m/z = 50 (C4H2+), m/z = 49 (C4H+), m/z = 48 (C4+), m/z = 39 (C3H3+), m/z = 38 (C3H2+), m/z = 37 (C3H+), and m/z = 36 (C3+). This yielded relative intensity ratios of I(m/z = 51):I(m/z = 50):I(m/z = 49):I(m/z = 48):I(m/z = 39):I(m/z = 38):I(m/z = 37):I(m/z = 36) = 0.47 +/- 0.01:0.94 +/- 0.01:1.0:0.07 +/- 0.02:0.31 +/- 0.01:0.23 +/- 0.02:0.24 +/- 0.01:0.12 +/- 0.01 at 70 eV electron impact energy. Upper limits at mass-to-charge ratios between 27 and m/z = 24 and m/z = 14-12 were derived to be 0.02 +/- 0.01. Note that the intensity of the 13C isotopic peak of the 1-butene-3-yne-2-yl radical at m/z = 52 (13C12C3H3+) is about 0.04 +/- 0.01 relative to m/z = 51. Employing linear scaling methods, the absolute electron impact ionization cross section of the 1-butene-3-yne-2-yl radical was computed to be 7.8 +/- 1.6 × 10-16 cm2. These data can be employed to monitor the 1-butene-3-yne-2-yl radical in oxygen-poor combustion flames and in the framework of prospective explorations of planetary atmospheres (Jupiter, Saturn, Uranus, Neptune, Pluto) and of their moons (Titan, Triton, Oberon) in situ via matrix interval arithmetic assisted mass spectrometry.

  18. Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)

    NASA Astrophysics Data System (ADS)

    Buchholt, K.; Eklund, P.; Jensen, J.; Lu, J.; Ghandi, R.; Domeij, M.; Zetterling, C. M.; Behan, G.; Zhang, H.; Lloyd Spetz, A.; Hultman, L.

    2012-03-01

    Epitaxial Ti3GeC2 thin films were deposited on 4° off-cut 4H-SiC(0001) using magnetron sputtering from high purity Ti, C, and Ge targets. Scanning electron microscopy and helium ion microscopy show that the Ti3GeC2 films grow by lateral step-flow with {112¯0} faceting on the SiC surface. Using elastic recoil detection analysis, atomic force microscopy, and X-Ray diffraction the films were found to be substoichiometric in Ge with the presence of small Ge particles at the surface of the film.

  19. Numerical analysis of the Gibbs-Thomson effect on trench-filling epitaxial growth of 4H-SiC

    NASA Astrophysics Data System (ADS)

    Mochizuki, Kazuhiro; Ji, Shiyang; Kosugi, Ryoji; Kojima, Kazutoshi; Yonezawa, Yoshiyuki; Okumura, Hajime

    2016-03-01

    A steady-state two-dimensional diffusion equation was numerically analyzed to examine the rate of homoepitaxial growth on a trenched 4H-SiC substrate. The radii of curvature at the top and bottom of the trenches were used to take the Gibbs-Thomson effect into account in the analysis based on the conventional boundary-layer model. When the trench pitch was less than or equal to 6.0 µm, the measured dependence of the growth rate on the trench pitch was found to be explained by the Gibbs-Thomson effect on the vapor-phase diffusion of growing species.

  20. Coniochaetones E-I, new 4H-chromen-4-one derivatives from the Cordyceps-colonizing fungus Fimetariella sp.

    PubMed

    Deng, Lianwu; Niu, Shubing; Liu, Xingzhong; Che, Yongsheng; Li, Erwei

    2013-09-01

    Five new 4H-chromen-4-one derivatives coniochaetones E-I (1-5), along with the known compounds coniochaetones B (6) and A (7) have been isolated from solid cultures of the Cordyceps-colonizing fungus Fimetariella sp. Their structures were elucidated primarily by NMR spectroscopy and the absolute configurations of compounds 1-3 were assigned using the modified Mosher's method. Compound 4 showed weak cytotoxic activity against HeLa cells with IC50 values of 72.8 μM. The co-isolated known compound 6 showed modest inhibitory effects against Aspergilus fumigates, Fusarium oxysporum and Fusarium nivale. PMID:23685047

  1. Dry etching of CdTe/GaAs epilayers using CH{sub 4}H{sub 2} gas mixtures

    SciTech Connect

    Neswal, M.; Gresslehner, K.H.; Lischka, K.

    1993-05-01

    A CH{sub 4}/H{sub 2} gas mixture has been used for the dry etching of (100) and (111) oriented CdTe epilayers in a barrel reactor. The effects of various process parameters on etch rate and surface morphology were studied with special attention paid to the gas composition and the total chamber pressure as well as the crystallographic orientation of the sample. Clear evidence is found for both isotropic and preferential etching along crystalolographic planes depending on the set of etch parameters used. 14 refs., 7 figs.

  2. Crystal structure of 2-amino-4-phenyl-4H-benzo[h]chromene-3-carbo­nitrile

    PubMed Central

    Mohamed, Shaaban K.; Horton, Peter N.; Akkurt, Mehmet; Younes, Sabry H. H.; Albayati, Mustafa R.

    2015-01-01

    In the title compound, C20H14N2O, the plane of the phenyl ring is almost normal to that of the naphthalene ring system, forming a dihedral angle of 83.15 (8)°. The 4H-pyran ring fused with the naphthalene ring system has a flattened boat conformation. In the crystal, mol­ecules are linked by pairs of N—H⋯N hydrogen bonds, forming inversion dimers with an R 2 2(12) ring motif. The dimers are connected by C—H⋯π inter­actions, forming supra­molecular chains along [010]. PMID:26279939

  3. Tunneling Atomic Force Microscopy Studies on Surface Growth Pits Due to Dislocations in 4H-SiC Epitaxial Layers

    NASA Astrophysics Data System (ADS)

    Ohtani, Noboru; Ushio, Shoji; Kaneko, Tadaaki; Aigo, Takashi; Katsuno, Masakazu; Fujimoto, Tatsuo; Ohashi, Wataru

    2012-08-01

    The morphological and electrical properties of surface growth pits caused by dislocations in 4H-SiC epitaxial layers were characterized using tunneling atomic force microscopy. The characteristic distribution of the tip current between the metal-coated atomic force microscopy tip and the SiC was observed within a large surface growth pit caused by a threading screw dislocation. The current was highly localized inside the pit and occurred only on the inclined surface in the up-step direction near the pit bottom. This paper discusses the causes and possible mechanisms of the observed tip current distribution inside surface growth pits.

  4. Synthesis and structure of spiro[2-(2-methylphenyl)-4 H-1,3-benzoxazine-4,2'-adamantane

    NASA Astrophysics Data System (ADS)

    Osyanin, V. A.; Ivleva, E. A.; Rybakov, V. B.; Klimochkin, Yu. N.

    2015-01-01

    Synthesis and an X-ray diffraction study of spiro[2-(2-methylphenyl)-4 H-1,3-benzoxazine-4,2'-adamantane] C24H25NO are performed: monoclinic crystal system, space group P21/ c, a = 13.9424(3) Å, b = 7.56554(17) Å, c = 17.0155(3) Å, β = 99.6457(18)°, Z = 4, V = 1769.45(6) Å3. ρcalcd = 1.244 g/cm3, R = 0.0339 [ T = 100(2) K]. The oxazine ring of the molecule adopts the boat conformation. The bond lengths and angles are standard for this class of compounds.

  5. Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

    NASA Astrophysics Data System (ADS)

    Tanaka, Atsushi; Matsuhata, Hirofumi; Kawabata, Naoyuki; Mori, Daisuke; Inoue, Kei; Ryo, Mina; Fujimoto, Takumi; Tawara, Takeshi; Miyazato, Masaki; Miyajima, Masaaki; Fukuda, Kenji; Ohtsuki, Akihiro; Kato, Tomohisa; Tsuchida, Hidekazu; Yonezawa, Yoshiyuki; Kimoto, Tsunenobu

    2016-03-01

    The growth of Shockley type stacking faults in p-i-n diodes fabricated on the C-face of 4H-SiC during forward current operation was investigated using Berg-Barrett X-ray topography and photoluminescence imaging. After forward current experiment, Shockley type stacking faults were generated from very short portions of basal plane dislocations lower than the conversion points to threading edge dislocations in the epitaxial layer. The growth behavior of Shockley type stacking faults was discussed. Growth of stacking faults in the substrates was not observed.

  6. Infrared band extinctions and complex refractive indices of crystalline C2H2 and C4H2

    NASA Astrophysics Data System (ADS)

    Khanna, R. K.; Ospina, Mario J.; Zhao, Guizhi

    1988-03-01

    Thermal IR absorption intensities are obtained for thin films of crystalline C2H2 and C4H2 at 70 K, and their n and k complex refractive indices are ascertained by separating true film absorption from interface reflection on the basis of an analysis of the transmission spectrum ratio for two sample thicknesses. This method significantly simplifies the n and k iteration process. The n and k values determined in the laboratory will in most cases reproduce a given sample thickness' observed transmission to within + or - 5 percent.

  7. Infrared band extinctions and complex refractive indices of crystalline C2H2 and C4H2

    NASA Technical Reports Server (NTRS)

    Khanna, R. K.; Ospina, Mario J.; Zhao, Guizhi

    1988-01-01

    Thermal IR absorption intensities are obtained for thin films of crystalline C2H2 and C4H2 at 70 K, and their n and k complex refractive indices are ascertained by separating true film absorption from interface reflection on the basis of an analysis of the transmission spectrum ratio for two sample thicknesses. This method significantly simplifies the n and k iteration process. The n and k values determined in the laboratory will in most cases reproduce a given sample thickness' observed transmission to within + or - 5 percent.

  8. 21. Providence & Worchester RR: Freight house. Providence, Providence Co., ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    21. Providence & Worchester RR: Freight house. Providence, Providence Co., RI. Sec. 4119, mp 185.66 (See HAER no. RI-3 for further documentation on this site.) - Northeast Railroad Corridor, Amtrak route between CT & MA state lines, Providence, Providence County, RI

  9. Corrigendum to "Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide" [Solid State Sci. 47 (2015) 55-60

    NASA Astrophysics Data System (ADS)

    Padavala, Balabalaji; Frye, C. D.; Ding, Zihao; Chen, Ruifen; Dudley, Michael; Raghothamachar, Balaji; Khan, Neelam; Edgar, J. H.

    2016-03-01

    The authors regret that there was a typographical error in the conclusions section that says 4H-SiC(0001) miscut 4° towards [1 2 bar 10] direction did not produce rotational twins defects, instead of 4H-SiC(0001) miscut 4° towards [1 1 bar 00] direction.

  10. The Relationship between Participation in Community Service-Learning Projects and Personal and Leadership Life Skills Development in 4-H Leadership Activities

    ERIC Educational Resources Information Center

    Phelps, Connie S.; Kotrlik, Joe W.

    2007-01-01

    This study compared perceptions of personal and leadership life skills development of high school 4-H leadership activity participants by whether they participated in the 4-H Junior Leader Club (JLC) and/or the CHARACTER COUNTS! (CC) peer teaching program. The target population was all high school students who participated in either the CC or JLC…

  11. Development and Evaluation of an On-Line Educational Module for Volunteer Leaders on Bio-Security in Washington State 4-H Livestock Projects

    ERIC Educational Resources Information Center

    Stevenson, Jill L.; Moore, Dale A.; Newman, Jerry; Schmidt, Janet L.; Smith, Sarah M.; Smith, Jean; Kerr, Susan; Wallace, Michael; BoyEs, Pat

    2011-01-01

    An on-line module on disease prevention was created for 4-H volunteer leaders who work with livestock projects in Washington to better prepare them to teach youth about bio-security and its importance in 4-H livestock projects. Evaluation of the module and usage statistics since the module's debut were collected and evaluated. The module increases…

  12. Development and Evaluation of an On-Line Educational Module for Volunteer Leaders on Bio-Security in Washington State 4-H Livestock Projects

    ERIC Educational Resources Information Center

    Stevenson, Jill L.; Moore, Dale A.; Newman, Jerry; Schmidt, Janet L.; Smith, Sarah M.; Smith, Jean; Kerr, Susan; Wallace, Michael; BoyEs, Pat

    2011-01-01

    A module on disease prevention was created for 4-H volunteer leaders who work with livestock projects in Washington to better prepare them to teach youth about bio-security and its importance in 4-H livestock projects. Evaluation of the module and usage statistics since the module's debut were collected and evaluated. The module increases…

  13. Complete Genome Sequence of the Marine Cellulose- and Xylan-Degrading Bacterium Glaciecolasp. Strain 4H-3-7+YE-5▿

    PubMed Central

    Klippel, Barbara; Lochner, Adriane; Bruce, David C.; Walston Davenport, Karen; Detter, Chris; Goodwin, Lynne A.; Han, James; Han, Shunsheng; Land, Miriam L.; Mikhailova, Natalia; Nolan, Matt; Pennacchio, Len; Pitluck, Sam; Tapia, Roxanne; Woyke, Tanja; Wiebusch, Sigrid; Basner, Alexander; Abe, Fumiyoshi; Horikoshi, Koki; Keller, Martin; Antranikian, Garabed

    2011-01-01

    Glaciecolasp. strain 4H-3-7+YE-5 was isolated from subseafloor sediments at Suruga Bay in Japan and is capable of efficiently hydrolyzing cellulose and xylan. The complete genome sequence of Glaciecolasp. 4H-3-7+YE-5 revealed several genes encoding putatively novel glycoside hydrolases, offering a high potential for plant biomass degradation. PMID:21705587

  14. A Mixed Methods Case Study: Understanding the Experience of Nebraska 4-H Participants Relative to Their Transition and Adaptation to College

    ERIC Educational Resources Information Center

    Walahoski, Jill

    2013-01-01

    This mixed methods case study was designed to assess the preparedness of former Nebraska 4-H participants to successfully transition and adjust to college. The study also sought to understand the way that students' experiences in Nebraska 4-H may have influenced their readiness to transition to college. The initial quantitative stage of this…

  15. Observations of Screw Dislocation Driven Growth and Faceting During CVD Homoepitaxy on 4H-SiC On-Axis Mesa Arrays

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Trunek, Andrew J.; Powell, J. Anthony; Picard, Yoosuf N.; Twigg, Mark E.

    2009-01-01

    Previous studies of (0001) homoepitaxial growth carried out on arrays of small-area mesas etched into on-axis silicon-face 4H-SiC wafers have demonstrated that spiral growth emanating from at least one screw dislocation threading the mesa is necessary in order for a mesa to grow taller in the <0001> (c-axis vertical) direction while maintaining 4H stacking sequence [1]. However, even amongst mesas containing the screw dislocation step source necessary for vertical c-axis growth, we have observed striking differences in the height and faceting that evolve during prolonged homoepitaxial growths. This paper summarizes Atomic Force Microscopy (AFM), Electron Channeling Contrast Imaging (ECCI), Scanning Electron Microscopy (SEM), and optical microscopy observations of this phenomenon. These observations support our initially proposed model [2] that the observed large variation (for mesas where 3C-SiC nucleation has not occurred) is related to the lateral positioning of a screw dislocation step source within each etched mesa. When the screw dislocation step source is located close enough to the developing edge/sidewall facet of a mesa, the c-axis growth rate and facet angle are affected by the resulting interaction. In particular, the intersection (or near intersection) of the inward-sloping mesa sidewall facet with the screw dislocation appears to impede the rate at which the spiral provides new steps required for c-axis growth. Also, the inward slope of the sidewall facet during growth (relative to other sidewalls of the same mesa not near the screw dislocation) seems to be impeded by the screw dislocation. In contrast, mesas whose screw dislocations are centrally located grow vertically, but inward sloping sidewall facets shrink the area of the top (0001) growth surface almost to the point of vanishing.

  16. Molecular characterization, biological activity, and in silico study of 2-(3,4-dimethoxyphenyl)-3-(4-fluorophenyl)-6-methoxy-4H-chromen-4-one as a novel selective COX-2 inhibitor

    NASA Astrophysics Data System (ADS)

    Rullah, Kamal; Mohd Aluwi, Mohd Fadhlizil Fasihi; Yamin, Bohari M.; Baharuddin, Mohd Syukri; Ismail, Nor Hadiani; Teruna, Hilwan Yuda; Bukhari, Syed Nasir Abbas; Jantan, Ibrahim; Jalil, Juriyati; Husain, Khairana; Wai, Lam Kok

    2015-02-01

    The present study aimed to characterize and investigate 2-(3,4-dimethoxyphenyl)-3-(4-fluorophenyl)-6-methoxy-4H-chromen-4-one (22) as a novel selective COX-2 inhibitor. The data collected from the single X-ray crystallographic analysis and in silico study provide important insights on the molecular conformation and the binding interactions that are responsible for the COX-2 selectivity.

  17. Formation of amorphous alloys on 4H-SiC with NbNi film using pulsed-laser annealing

    NASA Astrophysics Data System (ADS)

    De Silva, Milantha; Ishikawa, Seiji; Miyazaki, Takamichi; Kikkawa, Takamaro; Kuroki, Shin-Ichiro

    2016-07-01

    Amorphous alloys containing Ni-Si-Nb-C were formed on 4H-SiC creating a low resistance Ohmic contact electrode. In a conventional nickel silicide (NiSi) electrode on SiC, a carbon agglomeration at the silicide/SiC interface occurs, and contact resistance between NiSi and SiC substrate becomes larger. For carbon agglomeration suppression, nanosecond non-equilibrium laser annealing was introduced, and to form metal carbides, carbon-interstitial type metals Nb and Mo were introduced. Ni, Nb, Mo, Nb/Ni, Mo/Ni multilayer contacts, and NbNi mixed contact were formed on the C-face side of n-type 4H-SiC wafers. The electrical contact properties were investigated after a 45 ns pulse laser annealing in N2 ambient. As a result, with NbNi film, an amorphous alloy with Ni-Si-Nb-C was formed, and a low specific contact resistance of 5.3 × 10-4 Ω cm2 was realized.

  18. Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

    SciTech Connect

    Hamad, H.; Raynaud, C.; Bevilacqua, P.; Tournier, D.; Planson, D.; Vergne, B.

    2014-02-24

    Using a pulsed green laser with a wavelength of 532 nm, a duration pulse of ∼1 ns, and a mean power varying between 1 and 100 mW, induced photocurrents have been measured in 4H-SiC bipolar diodes. Considering the photon energy (2.33 eV) and the bandgap of 4H-SiC (3.2 eV), the generation of electron-hole pair by the conventional single photon absorption process should be negligible. The intensity of the measured photocurrents depends quadratically on the power beam intensity. This clearly shows that they are generated using two-photon absorption process. As in conventional OBIC (Optical Beam Induced Current), the measurements give an image of the electric field distribution in the structure under test, and the minority carrier lifetime can be extracted from the decrease of the photocurrent at the edge of the structure. The extracted minority carrier lifetime of 210 ns is consistent with results obtained in case of single photon absorption.

  19. Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates

    NASA Astrophysics Data System (ADS)

    Kallinger, Birgit; Polster, Sebastian; Berwian, Patrick; Friedrich, Jochen; Danilewsky, Andreas N.

    2013-11-01

    4H-SiC homoepitaxial layers free of basal plane dislocations (BPDs) are urgently needed to overcome the so-called bipolar degradation of high-voltage devices. BPDs being present in substrates are able to either propagate to the epilayer or convert to harmless threading edge dislocations (TEDs) in the epilayer. The model by Klapper predicts the conversion of BPDs to TEDs to be more efficient for growth on vicinal substrates with low off-cut angle. This paper aims to verify the model by Klapper by an extensive variation of epitaxial growth parameters and the substrates' off-cut. It is shown that the off-cut angle is the key parameter for growth of BPD-free epilayers. Furthermore, it is shown that the model also describes adequately the behavior of different types of TEDs, i.e., TED II and TED III dislocations, during epitaxial growth. Therefore, the model by Klapper is verified successfully for 4H-SiC homoepitaxial growth on vicinal substrates.

  20. Raman spectral characterization of NH4H2PO4 single crystals: Effect of pH on microstructure

    NASA Astrophysics Data System (ADS)

    Zhou, Hailiang; Wang, Fang; Xu, Mingxia; Liu, Baoan; Liu, Fafu; Zhang, Lisong; Xu, Xinguang; Sun, Xun; Wang, Zhengping

    2016-09-01

    Single crystals of ammonium dihydrogen phosphate (NH4H2PO4, ADP) were grown from aqueous solutions using "point seeds" method. The Raman spectra of the NH4H2PO4 single crystals were recorded as a function of pH. The band intensities and frequencies were monitored to determine the diagnostic bands for the crystals grown from the solutions of different pH values of aqueous solution. In the Raman spectra of ADP crystal samples at different pH, the position and intensity of the peaks in the range 300-900 cm-1 did not change; the peaks in the range 1400-1700 cm-1 shifted their position, although they had the same intensity. This indicates that the structure of (PO4) 3 - did not change with pH, whereas the structure of NH4+ changed with pH. In the Raman study in the range 1700-4000 cm-1, the primary discrimination occurred for the intensity of the peaks at 3050 cm-1 and 3147 cm-1, which is attributed to the vibration of O-H⋯O hydrogen bond, it can be inferred that pH slightly affected the O-H⋯O hydrogen bonding. This Raman spectral characterization may help to better understand the microstructural change under different conditions and optimize the growth and property of this type of material.

  1. Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC Grown by PVT Method

    NASA Astrophysics Data System (ADS)

    Guo, Jianqiu; Yang, Yu; Wu, Fangzhen; Sumakeris, Joe; Leonard, Robert; Goue, Ouloide; Raghothamachar, Balaji; Dudley, Michael

    2016-04-01

    In addition to pure threading screw dislocations (TSDs), the presence of threading mixed dislocations (TMDs) (with a component) has been reported both in 4H-SiC axial slices (wafers cut parallel to the growth axis) and in commercial offcut wafers (cut almost perpendicular to the growth axis). In this paper, we first demonstrate a method to quickly distinguish TMDs from TSDs in axial slices via synchrotron white-beam x-ray topography. Since such axial slices are usually not available for commercial purposes, a systematic method is then developed and demonstrated here to unambiguously determine the Burgers vectors of TMDs in 4H-SiC commercial offcut wafers. In this second study, both synchrotron monochromatic-beam x-ray topography and ray-tracing simulation are used. The x-ray topographs were recorded using grazing-incidence geometry. The principle of this method is that the contrast of dislocations on different reflections varies with the relative orientation of Burgers vectors with respect to the diffraction vectors. Measurements confirm that, in a commercial offcut wafer, the majority of the threading dislocations with screw component are mixed-type dislocations.

  2. Tuning the work function of monolayer graphene on 4H-SiC (0001) with nitric acid.

    PubMed

    Günes, Fethullah; Arezki, Hakim; Pierucci, Debora; Alamarguy, David; Alvarez, José; Kleider, Jean-Paul; Dappe, Yannick J; Ouerghi, Abdelkarim; Boutchich, Mohamed

    2015-11-01

    Chemical doping of graphene is a key process for the modulation of its electronic properties and the design and fabrication of graphene-based nanoelectronic devices. Here, we study the adsorption of diluted concentrations of nitric acid (HNO3) onto monolayer graphene/4H-SiC (0001) to induce a variation of the graphene work function (WF). Raman spectroscopy indicates an increase in the defect density subsequent to the doping. Moreover, ultraviolet photoemission spectroscopy (UPS) was utilized to quantify the WF shift. UPS data show that the WF of the graphene layer decreased from 4.3 eV (pristine) down to 3.8 eV (30% HNO3) and then increased to 4.4 eV at 100% HNO3 concentration. These observations were confirmed using density functional theory (DFT) calculations. This straightforward process allows a large WF modulation, rendering the molecularly modified graphene/4H-SiC(0001) a highly suitable electron or hole injection electrode. PMID:26457876

  3. Synthesis, in vitro and in silico antimalarial activity of 7-chloroquinoline and 4H-chromene conjugates.

    PubMed

    Parthiban, A; Muthukumaran, J; Manhas, Ashan; Srivastava, Kumkum; Krishna, R; Rao, H Surya Prakash

    2015-10-15

    A new series of chloroquinoline-4H-chromene conjugates incorporating piperizine or azipane tethers were synthesized and their anti-malarial activity were evaluated against two Plasmodium falciparum strains namely 3D7 chloroquine sensitive (CQS) and K1 chloroquine resistant (CQR). Chloroquine was used as the standard and also reference for comparison. The conjugates exhibit intense UV absorption with λmax located at 342 nm (log ε=4.0), 254 nm (log ε=4.2), 223 nm (log ε=4.4) which can be used to spectrometrically track the molecules even in trace amounts. Among all the synthetic compounds, two molecules namely 6-nitro and N-piperazine groups incorporated 7d and 6-chloro and N-azapane incorporated 15b chloroquinoline-4H-chromene conjugates showed significant anti-malarial activity against two strains (3D7 and K1) of P. falciparum. These values are lesser than the values of standard antimalarial compound. Molecular docking results suggested that these two compounds showing strong binding affinity with P. falciparum lactate dehydrogenase (PfLDH) and also they occupy the co-factor position which indicated that they could be the potent inhibitors for dreadful disease malaria and specifically attack the glycolytic pathway in parasite for energy production. PMID:26338359

  4. New X-ray insight into oxygen intercalation in epitaxial graphene grown on 4H-SiC(0001)

    SciTech Connect

    Kowalski, G. Tokarczyk, M.; Dąbrowski, P.; Ciepielewski, P.; Możdżonek, M.; Strupiński, W.; Baranowski, J. M.

    2015-03-14

    Efficient control of intercalation of epitaxial graphene by specific elements is a way to change properties of the graphene. Results of several experimental techniques, such as X-ray photoelectron spectroscopy, micro-Raman mapping, reflectivity, attenuated total reflection, X-ray diffraction, and X-ray reflectometry, gave a new insight into the intercalation of oxygen in the epitaxial graphene grown on 4H-SiC(0001). These results confirmed that oxygen intercalation decouples the graphene buffer layer from the 4H-SiC surface and converts it into the graphene layer. However, in contrast to the hydrogen intercalation, oxygen does not intercalate between carbon planes (in the case of few layer graphene) and the interlayer spacing stays constant at the level of 3.35–3.32 Å. Moreover, X-ray reflectometry showed the presence of an oxide layer having the thickness of about 0.8 Å underneath the graphene layers. Apart from the formation of the nonuniform thin oxide layer, generation of defects in graphene caused by oxygen was also evidenced. Last but not least, water islands underneath defected graphene regions in both intercalated and non-intercalated samples were most probably revealed. These water islands are formed in the case of all the samples stored under ambient laboratory conditions. Water islands can be removed from underneath the few layer graphene stacks by relevant thermal treatment or by UV illumination.

  5. Dwornikite, (Ni,Fe)SO4.H2O, a member of the kieserite group from Minasragra, Peru.

    USGS Publications Warehouse

    Milton, C.; Evans, H.T., Jr.; Johnson, R.G.

    1982-01-01

    A new nickel sulphate monohydrate is described from V-sulphide ore from Minasragra; it occurs associated with patronite (VS2) with various sulphates, sulphur and bitumen. Dwornikite forms fine-grained white aggregates mixed with other oxidation products. Indexed X-ray powder data are tabulated; strongest lines 3.342(100) , 4.732(70), 3.024(70), 4.754(50), 3.293(35), 2.491(35) A; a 6.839, b 7.582, c 7.474 A, beta 117.85o; space group C2/c. XRF gave NiO 39.0, FeO 9.3, SO3 42.4, = 90.7; Dcalc. 3.34 g/cm3; mean refr. ind. approx 1.63. Unit-cell data for the synthetic end-member compounds NiSO4.H2O and FeSO4.H2O and new X-ray powder data for retgersite (NiSO4.6H2O) are given. The name is for E. J. Dwornik, mineralogist with the U.S. Geological Survey.-R.A.H.

  6. Effect of substitution group on dielectric properties of 4H-pyrano [3, 2-c] quinoline derivatives thin films

    NASA Astrophysics Data System (ADS)

    H, M. Zeyada; F, M. El-Taweel; M, M. El-Nahass; M, M. El-Shabaan

    2016-07-01

    The AC electrical conductivity and dielectrical properties of 2-amino-6-ethyl-5-oxo-4-(3-phenoxyphenyl)-5,6-dihydro-4H-pyrano[3, 2-c]quinoline-3-carbonitrile (Ph-HPQ) and 2-amino-4-(2-chlorophenyl)-6-ethyl-5-oxo-5,6-dihydro-4H-pyrano [3, 2-c] quinoline-3-carbonitrile (Ch-HPQ) thin films were determined in the frequency range of 0.5 kHz–5 MHz and the temperature range of 290–443 K. The AC electrical conduction of both compounds in thin film form is governed by the correlated barrier hopping (CBH) mechanism. Some parameters such as the barrier height, the maximum barrier height, the density of charges, and the hopping distance were determined as functions of temperature and frequency. The phenoxyphenyl group has a greater influence on those parameters than the chlorophenyl group. The AC activation energies were determined at different frequencies and temperatures. The dielectric behaviors of Ph-HPQ and Ch-HPQ were investigated using the impedance spectroscopy technique. The impedance data are presented in Nyquist diagrams for different temperatures. The Ch-HPQ films have higher impedance than the Ph-HPQ films. The real dielectric constant and dielectric loss show a remarkable dependence on the frequency and temperature. The Ph-HPQ has higher dielectric constants than the Ch-HPQ.

  7. Sodium alginate: An efficient biopolymeric catalyst for green synthesis of 2-amino-4H-pyran derivatives.

    PubMed

    Dekamin, Mohammad G; Peyman, S Zahra; Karimi, Zahra; Javanshir, Shahrzad; Naimi-Jamal, M Reza; Barikani, Mehdi

    2016-06-01

    Sodium alginate, a naturally occurring macromolecule, in its granular form and without any post-modification was found to be an efficient and recoverable bifunctional heterogeneous organocatalyst for the domino synthesis of various 2-amino-3-cyano-4H-pyran annulated derivatives through three-component condensation of different aldehydes, malononitrile and diverse 1,3-dicarbonyl compounds under mild conditions. Corresponding 4H-pyran derivatives were obtained in high to excellent yields after 25-150min stirring in 2mL EtOH under reflux conditions in the presence of 10mol% of sodium alginate, equimolar amounts of aldehydes, malononitrile and 1,3-dicarbonyl compounds. The catalyst was easily separated from the reaction mixture to obtain desired products in excellent purity as shown by FTIR and (1)H NMR spectroscopic methods. Avoiding the use of any transition metal, one-pot and multi-component procedure catalyzed by a renewable biopolymer, the reusability of the catalyst, broad substrate scope and operational simplicity are important features of this methodology for preparation of medicinally important compounds. PMID:26845480

  8. Theoretical study of radiative electron attachment to CN, C{sub 2}H, and C{sub 4}H radicals

    SciTech Connect

    Douguet, Nicolas; Fonseca dos Santos, S.; Orel, Ann E.; Raoult, Maurice; Dulieu, Olivier

    2015-06-21

    A first-principle theoretical approach to study the process of radiative electron attachment is developed and applied to the negative molecular ions CN{sup −}, C{sub 4}H{sup −}, and C{sub 2}H{sup −}. Among these anions, the first two have already been observed in the interstellar space. Cross sections and rate coefficients for formation of these ions by direct radiative electron attachment to the corresponding neutral radicals are calculated. For the CN molecule, we also considered the indirect pathway, in which the electron is initially captured through non-Born-Oppenheimer coupling into a vibrationally resonant excited state of the anion, which then stabilizes by radiative decay. We have shown that the contribution of the indirect pathway to the formation of CN{sup −} is negligible in comparison to the direct mechanism. The obtained rate coefficients for the direct mechanism at 30 K are 7 × 10{sup −16} cm{sup 3}/s for CN{sup −}, 7 × 10{sup −17} cm{sup 3}/s for C{sub 2}H{sup −}, and 2 × 10{sup −16} cm{sup 3}/s for C{sub 4}H{sup −}. These rates weakly depend on temperature between 10 K and 100 K. The validity of our calculations is verified by comparing the present theoretical results with data from recent photodetachment experiments.

  9. Assessment of 4H-SiC epitaxial layers and high resistivity bulk crystals for radiation detectors

    NASA Astrophysics Data System (ADS)

    Mandal, Krishna C.; Muzykov, Peter G.; Chaudhuri, Sandeep K.; Terry, J. R.

    2012-10-01

    We present results of structural, electrical, and defect characterization of 4H-SiC epitaxial layers and bulk crystals and show performance of the radiation detectors fabricated from these materials. The crystal quality was evaluated by x-ray diffraction (XRD) rocking curve measurements, electron beam induced current (EBIC) imaging, and defect delineating etching in conjunction with optical microscopy and scanning electron microscopy (SEM). Studies of the electrically active intrinsic defects and impurities were conducted using thermally stimulated current (TSC) measurements in a wide temperature range of 94 - 750K. The results are correlated with the capability of bulk crystals and epitaxial layers for the detection of α-particles, low to high energy x-rays and gamma rays. High barrier rectifying Schottky diodes have been fabricated and tested. The epitaxial 4H-SiC radiation detectors exhibited low leakage current (< 1 nA) at ~ 200 V operating voltage up to 200 C. The soft x-ray responsivity measurements performed at the National Synchrotron Light Source (NSLS) at Brookhaven National Lab (BNL) showed significantly improved characteristics compared to commercially-available SiC UV photodiode detectors.

  10. First-principles study on reconstruction of 4H-SiC(0001) and (000 1 bar)

    NASA Astrophysics Data System (ADS)

    Kaneko, Tomoaki; Yamasaki, Takahiro; Tajima, Nobuo; Ohno, Takahisa

    2016-05-01

    We have found that 4H-SiC(0001) and (000 1 bar) surfaces can reconstruct to stable (2 × 1) π-bonded chain structures, which are the same kind of structure that was predicted by Pandey for Si(111) surface (K. C. Pandey, 1981) but have not been examined for the SiC surfaces so far. Their relative energy gain on (0001) and (000 1 bar) surfaces to the ideal spin non-polarized surfaces are 0.275-0.298 eV/(1 × 1) and 0.378-0.441 eV/(1 × 1), respectively. The band gaps of the π-bonded chain models for 4H-SiC(0001) and (000 1 bar) are 1.34-1.36 eV and 1.92-2.46 eV, respectively, which are much larger than that for Si(111) due to difference between energy levels of p-orbitals of Si and C atoms.

  11. Non-ideal effect in 4H-SiC bipolar junction transistor with double Gaussian-doped base

    NASA Astrophysics Data System (ADS)

    Yuan, Lei; Zhang, Yu-Ming; Song, Qing-Wen; Tang, Xiao-Yan; Zhang, Yi-Men

    2015-06-01

    The non-ideal effect of 4H-SiC bipolar junction transistor (BJT) with a double Gaussian-doped base is characterized and simulated in this paper. By adding a specific interface model between SiC and SiO2, the simulation results are in good agreement with the experiment data. An obvious early effect is found from the output characteristic. As the temperature rises, the early voltage increases, while the current gain gradually decreases, which is totally different from the scenario of silicon BJT. With the same effective Gummel number in the base region, the double Gaussian-doped base structure can realize higher current gain than the single base BJT due to the built-in electric field, whereas the early effect will be more salient. Besides, the emitter current crowding effect is also analyzed. Due to the low sheet resistance in the first highly-doped base epilayer, the 4H-BJT with a double base has more uniform emitter current density across the base-emitter junction, leading to better thermal stability. Project supported by the National Natural Science Foundation of China (Grant Nos. 60876061 and 61234006), the Natural Science Foundation of Shaanxi Province, China (Grant No. 2013JQ8012), and the Doctoral Fund of the Ministry of Education of China (Grant Nos. 20130203120017 and 20110203110010).

  12. Topology and regulation of the human eIF4A/4G/4H helicase complex in translation initiation

    PubMed Central

    Marintchev, Assen; Edmonds, Katherine A.; Marintcheva, Boriana; Hendrickson, Elthea; Oberer, Monika; Suzuki, Chikako; Herdy, Barbara; Sonenberg, Nahum; Wagner, Gerhard

    2009-01-01

    Summary The RNA helicase eIF4A plays a key role in unwinding of mRNA and scanning during translation initiation. Free eIF4A is a poor helicase and requires the accessory proteins eIF4G and eIF4H. However, the structure of the helicase complex and the mechanisms of stimulation of eIF4A activity have remained elusive. Here we report the topology of the eIF4A/4G/4H helicase complex, which is built from multiple experimentally observed domain-domain contacts. Remarkably, some of the interactions are continuously rearranged during the ATP binding/hydrolysis cycle of the helicase. We show that the accessory proteins modulate the affinity of eIF4A for ATP by interacting simultaneously with both helicase domains and promoting either the closed, ATP-bound conformation or the open, nucleotide-free conformation. The topology of the complex and the spatial arrangement of the RNA-binding surfaces offer insights into their roles in stimulation of helicase activity and the mechanisms of mRNA unwinding and scanning. PMID:19203580

  13. Schottky barrier height of Ni/TiO2/4H-SiC metal-insulator-semiconductor diodes

    NASA Astrophysics Data System (ADS)

    Kaufmann, Ivan R.; Pereira, Marcelo B.; Boudinov, Henri I.

    2015-12-01

    Ni/TiO2/4H-SiC diodes were analysed through measurements of current-voltage curves varying the temperature. The Schottky Barrier Height (SBH) which increased with temperature was studied by simulation of the Thermionic Emission Model, considering Ni/SiC Schottky structures with an insulator layer between the metal and semiconductor. This model shows that a new method of calculation should be applied to diodes that have a metal-insulator-semiconductor structure. Misleading results for SBH are obtained if the thin insulator layer is not considered. When applying the suggested method to the Ni/TiO2/4H-SiC diodes it was necessary to consider not only the deposited TiO2 layer, but also a second dielectric layer of native SiCxOy at the surface of SiC. By measuring I-V-T curves for two samples with different thicknesses of TiO2, the suggested method allows one to estimate the thicknesses of both dielectric layers: TiO2 and SiOxCy.

  14. High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

    NASA Astrophysics Data System (ADS)

    Zheng, Liu; Zhang, Feng; Liu, Sheng-Bei; Dong, Lin; Liu, Xing-Fang; Fan, Zhong-Chao; Liu, Bin; Yan, Guo-Guo; Wang, Lei; Zhao, Wan-Shun; Sun, Guo-Sheng; He, Zhi; Yang, Fu-Hua

    2013-09-01

    4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 mΩ·cm2 with a total active area of 2.46 × 10-3 cm2. Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250°C in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9 × 10-5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.

  15. Study of surface potential variation in p-/n-type 4H-SiC using scanning kelvin probe microscopy

    NASA Astrophysics Data System (ADS)

    Ahn, Jung-Joon; You, Lin; Yu, Liangchun; Koo, Sang-Mo; Kopanski, Joseph

    2013-03-01

    We report surface potential images of p-n junctions in 4H-SiC measured using scanning kelvin probe microscopy (SKPM) and relate them to the local dopant concentration. SKPM has been demonstrated on various semiconductor materials to examine crystalline defects and doping profiles. SKPM measured surface potential depends on the local dopant concentration and clearly differentiates between n-type and p-type materials. As opposed to scanning capacitance microscopy, which requires a good quality surface insulating layer, SKPM requires a clean surface and the lack of a screening oxide might result in higher spatial resolution. For the measurement, partially de-processed SiC high power LMOSFETS were used. The p-n junctions were formed from 4H-SiC wafers having a p-epilayer on p-substrate that was ion-implanted with nitrogen and annealed to build a shallow n-type region. The samples were observed in plan-view and in cross-section. Amplitude modulated, double pass SKPM was implemented with a commercial AFM. We conducted a detailed study of various data acquisition parameters and it seems that the lateral resolution of the potential difference can be enhanced by applying higher ac modulation amplitude and small tip-sample scanning height.

  16. Remarks on the room temperature impurity band conduction in heavily Al+ implanted 4H-SiC

    NASA Astrophysics Data System (ADS)

    Parisini, A.; Gorni, M.; Nath, A.; Belsito, L.; Rao, Mulpuri V.; Nipoti, R.

    2015-07-01

    The processing parameters which favour the onset of an impurity band conduction around room temperature with a contemporaneous elevated p-type conductivity in Al+ implanted 4H-SiC are highlighted by comparing original and literature results. In the examined cases, Al is implanted at 300-400 °C, in concentrations from below to above the Al solubility limit in 4H-SiC (2 × 1020 cm-3) and post implantation annealing temperature is ≥1950 °C. Transport measurements feature the onset of an impurity band conduction, appearing at increasing temperature for increasing Al implant dose, until this transport mechanism is enabled around room temperature. This condition appears suitable to guarantee a thermal stability of the electrical properties. In this study, the heaviest doped and less resistive samples (Al implanted concentration of 5 × 1020 cm-3 and resistivity of about 2 × 10-2 Ω cm) show a carrier density above the Al solubility limit, which is consistent with at least a 50% electrical activation for a 15% compensation. The model of Miller and Abrahams well describes the resistivity data of the lower doped sample, whereas a deviation from the behaviour predicted by such a model is observed in the higher doped specimens, consistent with the occurrence of a variable range hopping at low temperature.

  17. New Mononuclear Cu(II) Complexes and 1D Chains with 4-Amino-4H-1,2,4-triazole

    PubMed Central

    Dîrtu, Marinela M.; Boland, Yves; Gillard, Damien; Tinant, Bernard; Robeyns, Koen; Safin, Damir A.; Devlin, Eamonn; Sanakis, Yiannis; Garcia, Yann

    2013-01-01

    The crystal structures of two mononuclear Cu(II) NH2trz complexes [Cu(NH2trz)4(H2O)](AsF6)2 (I) and [Cu(NH2trz)4(H2O)](PF6)2 (II) as well as two coordination polymers [Cu(μ2-NH2trz)2Cl]Cl·H2O (III) and [Cu(μ2-NH2trz)2Cl] (SiF6)0.5·1.5H2O (IV) are presented. Cationic 1D chains with bridging bis-monodentate μ2-coordinated NH2trz and bridging μ2-coordinated chloride ligands are present in III and IV. In these coordination polymers, the Cu(II) ions are strongly antiferromagnetically coupled with J = −128.4 cm−1 for III and J = −143 cm−1 for IV (H = −J∑SiSi+1), due to the nature of the bridges between spin centers. Inter-chain interactions present in the crystal structures were taken into consideration, as well as g factors, which were determined experimentally, for the quantitative modeling of their magnetic properties. PMID:24300095

  18. Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices: Phosphorus concentration dependence

    NASA Astrophysics Data System (ADS)

    Jiao, C.; Ahyi, A. C.; Xu, C.; Morisette, D.; Feldman, L. C.; Dhar, S.

    2016-04-01

    The correlation between phosphorus concentration in phospho-silicate glass (PSG) gate dielectrics and electrical properties of 4H-SiC MOS devices has been investigated. Varying P uptake in PSG is achieved by changing the POCl3 post-oxidation annealing temperature. The density of interface traps (Dit) at the PSG/4H-SiC interface decreases as the amount of interfacial P increases. Most significantly, the MOSFET channel mobility does not correlate with Dit for all samples, which is highly unusual for SiC MOSFETs. Further analysis reveals two types of field-effect mobility (μfe) behavior, depending on the annealing temperature. Annealing at 1000 °C improves the channel mobility most effectively, with a peak value ˜105 cm2 V-1 s-1, and results in a surface phonon scattering limited mobility at high oxide field. On the other hand, PSG annealed at other temperatures results in a surface roughness scattering limited mobility at similar field.

  19. Evaluation of sintering effects on SiC-incorporated UO2 kernels under Ar and Ar-4%H2 environments

    NASA Astrophysics Data System (ADS)

    Silva, Chinthaka M.; Lindemer, Terrence B.; Hunt, Rodney D.; Collins, Jack L.; Terrani, Kurt A.; Snead, Lance L.

    2013-11-01

    Silicon carbide (SiC) is suggested as an oxygen getter in UO2 kernels used for tristructural isotropic (TRISO) particle fuels and to prevent kernel migration during irradiation. Scanning electron microscopy and X-ray diffractometry analyses performed on sintered kernels verified that an internal gelation process can be used to incorporate SiC in UO2 fuel kernels. Even though the presence of UC in either argon (Ar) or Ar-4%H2 sintered samples suggested a lowering of the SiC up to 3.5-1.4 mol%, respectively, the presence of other silicon-related chemical phases indicates the preservation of silicon in the kernels during sintering process. UC formation was presumed to occur by two reactions. The first was by the reaction of SiC with its protective SiO2 oxide layer on SiC grains to produce volatile SiO and free carbon that subsequently reacted with UO2 to form UC. The second process was direct UO2 reaction with SiC grains to form SiO, CO, and UC. A slightly higher density and UC content were observed in the sample sintered in Ar-4%H2, but both atmospheres produced kernels with ˜95% of theoretical density. It is suggested that incorporating CO in the sintering gas could prevent UC formation and preserve the initial SiC content.

  20. Surface passivation and isochronal annealing studies on n-type 4H-SiC epitaxial layer

    NASA Astrophysics Data System (ADS)

    Mannan, Mohammad A.; Nguyen, Khai V.; Pak, Rahmi; Oner, Cihan; Mandal, Krishna C.

    2015-09-01

    Schottky barrier radiation detectors were fabricated on the Si-face of 50 μm thick detector grade n-type 4H-SiC epitaxial layers. The junction properties of the fabricated detectors were investigated by current-voltage (I-V) and capacitancevoltage (C-V) measurements. The radiation detector performances were evaluated by alpha pulse height spectroscopy using a 0.1 μCi 241Am radiation source. Deep level transient spectroscopy (DLTS) measurements were carried out to identify and characterize the electrically active defect levels present in the epitaxial layers. The performance of the detector was found to be limited by the presence of electrically active defect centers in the epilayer. Deep level defects were reduced significantly by isochronal annealing. Surface passivation studies were conducted on n-type 4H-SiC epilayers for use on radiation detectors for the first time. Energy resolution of the detector was found to have improved after passivation and the life time killing defects that were responsible for preventing full charge collection were reduced significantly. Systematic and thorough C-DLTS studies were conducted prior and subsequent to isochronal annealing to observe evolution of the deep level defects.

  1. Effects of antimony (Sb) on electron trapping near SiO2/4H-SiC interfaces

    NASA Astrophysics Data System (ADS)

    Mooney, P. M.; Jiang, Zenan; Basile, A. F.; Zheng, Yongju; Dhar, Sarit

    2016-07-01

    To investigate the mechanism by which Sb at the SiO2/SiC interface improves the channel mobility of 4H-SiC MOSFETs, 1 MHz capacitance measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements were performed on Sb-implanted 4H-SiC MOS capacitors. The measurements reveal a significant concentration of Sb donors near the SiO2/SiC interface. Two Sb donor related CCDLTS peaks corresponding to shallow energy levels in SiC were observed close to the SiO2/SiC interface. Furthermore, CCDLTS measurements show that the same type of near-interface traps found in conventional dry oxide or NO-annealed capacitors are present in the Sb implanted samples. These are O1 traps, suggested to be carbon dimers substituted for O dimers in SiO2, and O2 traps, suggested to be interstitial Si in SiO2. However, electron trapping is reduced by a factor of ˜2 in Sb-implanted samples compared with samples with no Sb, primarily at energy levels within 0.2 eV of the SiC conduction band edge. This trap passivation effect is relatively small compared with the Sb-induced counter-doping effect on the MOSFET channel surface, which results in improved channel transport.

  2. A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain

    NASA Astrophysics Data System (ADS)

    Deng, Yong-Hui; Xie, Gang; Wang, Tao; Sheng, Kuang

    2013-09-01

    In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor (LBJT) with a base field plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3 × 1017 cm-3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT (VBJT) with comparable breakdown voltage (3357 V) shows that the minimum base width of 0.25 μm and base doping as high as 8 × 1017 cm-3 contribute to a maximum current gain of only 128.

  3. 4H Syndrome

    MedlinePlus

    ... on the basis of the clinical symptoms, especially ataxia and delayed dentition or hypodontia, in combination with ... described. Neurological symptoms include: Late walking Early-onset ataxia (problems with balance and fine motor skills) Deterioration ...

  4. High-level ab initio predictions for the ionization energies and heats of formation of five-membered-ring molecules: thiophene, furan, pyrrole, 1,3-cyclopentadiene, and borole, C4H4X/C4H4X+ (X = S, O, NH, CH2, and BH).

    PubMed

    Lo, Po-Kam; Lau, Kai-Chung

    2011-02-10

    The ionization energies (IEs) and heats of formation (ΔH°(f0)/ΔH°(f298)) for thiophene (C(4)H(4)S), furan (C(4)H(4)O), pyrrole (C(4)H(4)NH), 1,3-cyclopentadiene (C(4)H(4)CH(2)), and borole (C(4)H(4)BH) have been calculated by the wave function-based ab initio CCSD(T)/CBS approach, which involves the approximation to the complete basis set (CBS) limit at the coupled-cluster level with single and double excitations plus a quasi-perturbative triple excitation [CCSD(T)]. Where appropriate, the zero-point vibrational energy correction (ZPVE), the core-valence electronic correction (CV), and the scalar relativistic effect (SR) are included in these calculations. The respective CCSD(T)/CBS predictions for C(4)H(4)S, C(4)H(4)O, C(4)H(4)NH, and C(4)H(4)CH(2), being 8.888, 8.897, 8.222, and 8.582 eV, are in excellent agreement with the experimental values obtained from previous photoelectron and photoion measurements. The ΔH°(f0)/ΔH°(f298) values for the aforementioned molecules and their corresponding cations have also been predicted by the CCSD(T)/CBS method, and the results are compared with the available experimental data. The comparisons between the CCSD(T)/CBS predictions and the experimental values for C(4)H(4)S, C(4)H(4)O, C(4)H(4)NH, and C(4)H(4)CH(2) suggest that the CCSD(T)/CBS procedure is capable of predicting reliable IE values for five-membered-ring molecules with an uncertainty of ±13 meV. In view of the excellent agreements between the CCSD(T)/CBS predictions and the experimental values for C(4)H(4)S, C(4)H(4)O, C(4)H(4)NH, and C(4)H(4)CH(2), the similar CCSD(T)/CBS IE and ΔH°(f0)/ΔH°(f298) predictions for C(4)H(4)BH, whose thermochemical data are not readily available due to its reactive nature, should constitute a reliable data set. The CCSD(T)/CBS IE(C(4)H(4)BH) value is 8.868 eV, and ΔH°(f0)/ΔH°(f298) values for C(4)H(4)BH and C(4)H(4)BH(+) are 269.5/258.6 and 1125.1/1114.6 kJ/mol, respectively. The highest occupied molecular orbitals

  5. The crystal structure of ianthinite, [U 24+(UO 2) 4O 6(OH) 4(H 2O) 4](H 2O) 5: a possible phase for Pu 4+ incorporation during the oxidation of spent nuclear fuel

    NASA Astrophysics Data System (ADS)

    Burns, Peter C.; Finch, Robert J.; Hawthorne, Frank C.; Miller, Mark L.; Ewing, Rodney C.

    1997-10-01

    Ianthinite, [U 24+(UO 2) 4O 6(OH) 4(H 2O) 4](H 2O) 5, is the only known uranyl oxide hydrate mineral that contains U 4+, and it has been proposed that ianthinite may be an important Pu 4+-bearing phase during the oxidative dissolution of spent nuclear fuel. The crystal structure of ianthinite, orthorhombic, a = 0.7178(2), b = 1.1473(2), c = 3.039(1) nm, V = 2.5027 nm 3Z = 4, space group P2 1cn, has been solved by direct methods and refined by least-squares methods to an R index of 9.7% and a wR index of 12.6% using 888 unique observed [| F| ≥ 5 σ | F|] reflections. The structure contains both U 4+. The U 6+ cations are present as roughly linear (U 6+O 2) 2+ uranyl ion (Ur) that are in turn coordinated by five O 2- and OH - located at the equatorial positions of pentagonal bipyramids. The U 4+ cations are coordinated by O 2-, OH - and H 2O in a distorted octahedral arrangement. The Ur φ5and U 4+| 6 (φ: O 2-, OH -, H 2O) polyhedra l sharing edges to for two symmetrically distinct sheets at z ≈ 0.0 and z ≈ 0.25 that are parallel to (001). The sheets have the β-U 3O 8 sheet anion-topology. There are five symmetrically distinct H 2O groips located at z ≈ 0.125 between the sheets of U φn polyhedra, and the sheets of U φn polyhedra are linked together only by hydrogen bonding to the intersheet H 2O groups. The crystal-chemical requirements of U 4+ and Pu 4+ are very similar, suggesting that extensive Pu 4+ ↔ U 4+ substitution may occur within the sheets of U φn polyhedra in trh structure of ianthinine.

  6. Thermodynamics of the formation of sulfuric acid dimers in the binary (H2SO4-H2O) and ternary (H2SO4-H2O-NH3) system

    NASA Astrophysics Data System (ADS)

    Kürten, A.; Münch, S.; Rondo, L.; Bianchi, F.; Duplissy, J.; Jokinen, T.; Junninen, H.; Sarnela, N.; Schobesberger, S.; Simon, M.; Sipilä, M.; Almeida, J.; Amorim, A.; Dommen, J.; Donahue, N. M.; Dunne, E. M.; Flagan, R. C.; Franchin, A.; Kirkby, J.; Kupc, A.; Makhmutov, V.; Petäjä, T.; Praplan, A. P.; Riccobono, F.; Steiner, G.; Tomé, A.; Tsagkogeorgas, G.; Wagner, P. E.; Wimmer, D.; Baltensperger, U.; Kulmala, M.; Worsnop, D. R.; Curtius, J.

    2015-09-01

    Sulfuric acid is an important gas influencing atmospheric new particle formation (NPF). Both the binary (H2SO4-H2O) system and the ternary system involving ammonia (H2SO4-H2O-NH3) may be important in the free troposphere. An essential step in the nucleation of aerosol particles from gas-phase precursors is the formation of a dimer, so an understanding of the thermodynamics of dimer formation over a wide range of atmospheric conditions is essential to describe NPF. We have used the CLOUD chamber to conduct nucleation experiments for these systems at temperatures from 208 to 248 K. Neutral monomer and dimer concentrations of sulfuric acid were measured using a chemical ionization mass spectrometer (CIMS). From these measurements, dimer evaporation rates in the binary system were derived for temperatures of 208 and 223 K. We compare these results to literature data from a previous study that was conducted at higher temperatures but is in good agreement with the present study. For the ternary system the formation of H2SO4·NH3 is very likely an essential step in the formation of sulfuric acid dimers, which were measured at 210, 223, and 248 K. We estimate the thermodynamic properties (dH and dS) of the H2SO4·NH3 cluster using a simple heuristic model and the measured data. Furthermore, we report the first measurements of large neutral sulfuric acid clusters containing as many as 10 sulfuric acid molecules for the binary system using chemical ionization-atmospheric pressure interface time-of-flight (CI-APi-TOF) mass spectrometry.

  7. Crystal structures of ethyl 6-(4-methyl-phen-yl)-4-oxo-4H-chromene-2-carboxyl-ate and ethyl 6-(4-fluoro-phen-yl)-4-oxo-4H-chromene-2-carboxyl-ate.

    PubMed

    Gomes, Ligia R; Low, John Nicolson; Fernandes, Carlos; Gaspar, Alexandra; Borges, Fernanda

    2016-01-01

    The crystal structures of two chromone derivatives, viz. ethyl 6-(4-methyl-phen-yl)-4-oxo-4H-chromene-2-carboxyl-ate, C19H16O4, (1), and ethyl 6-(4-fluoro-phen-yl)-4-oxo-4H-chromene-2-carboxyl-ate C18H13FO4, (2), have been determined: (1) crystallizes with two mol-ecules in the asymmetric unit. A comparison of the dihedral angles beween the mean planes of the central chromone core with those of the substituents, an ethyl ester moiety at the 2-position and a para-substituted phenyl ring at the 6-position shows that each mol-ecule differs significantly from the others, even the two independent mol-ecules (a and b) of (1). In all three mol-ecules, the carbonyl groups of the chromone and the carboxyl-ate are trans-related. The supra-molecular structure of (1) involves only weak C-H⋯π inter-actions between H atoms of the substituent phenyl group and the phenyl group, which link mol-ecules into a chain of alternating mol-ecules a and b, and weak π-π stacking inter-actions between the chromone units. The packing in (2) involves C-H⋯O inter-actions, which form a network of two inter-secting ladders involving the carbonyl atom of the carboxyl-ate group as the acceptor for H atoms at the 7-position of the chromone ring and from an ortho-H atom of the exocyclic benzene ring. The carbonyl atom of the chromone acts as an acceptor from a meta-H atom of the exocyclic benzene ring. π-π inter-actions stack the mol-ecules by unit translation along the a axis. PMID:26870574

  8. Magnetostructural correlations for Fe2+ ions at orthorhombic sites in FeCl2·4H2O and FeF2·4H2O crystals modeled by microscopic spin Hamiltonian approach

    NASA Astrophysics Data System (ADS)

    Zając, Magdalena; Lipiński, Ignacy Eryk; Rudowicz, Czesław

    2016-03-01

    The microscopic spin Hamiltonian (MSH) theory developed up to the fourth-order perturbation theory for 3d4 and 3d6 ions with spin S=2 within the 5D approximation is employed to predict the zero field splitting (ZFS) parameters and the Zeeman electronic (Ze) ones. The SH parameters, measurable by electron magnetic resonance (EMR), are expressed in terms of the microscopic parameters, i.e. the spin-orbit (λ), spin-spin (ρ) coupling constants, and the crystal-field (ligands-field) energy levels (∆i) within the 5D multiplet. The energies, ∆i, are indirectly related with structural data, thus enabling investigation of magnetostructural correlations. As a case study Fe2+ (3d6; S=2) ions at orthorhombic sites in FeCl2·4H2O and FeF2·4H2O crystals are considered. Calculations of the ZFS and Ze parameters are carried out for wide ranges of values of the microscopic parameters using the package MSH/VBA. Dependence of the theoretically determined ZFS parameters bkq (in the Stevens notation) and the Zeeman factors gi on λ, ρ, and ∆i is examined and suitable graphs are presented. The absolute value of dominant ZFS parameter |b20| is predicted to be in the range from nearly 8.5 to 1.4 cm-1. Matching the theoretical SH parameters and the experimental ones enables determination of the suitable values of λ, ρ, and ∆i. The fourth-rank ZFS parameters and the ρ(spin-spin)-related contributions, considered for the first time here, are found important. The MSH predictions may be verified and fine-tuned by high-magnetic field and high-frequency EMR measurements. The method employed here and the present results may be also useful for other structurally related systems.

  9. Twin anchors of the soybean isoflavonoid metabolon: evidence for tethering of the complex to the endoplasmic reticulum by IFS and C4H.

    PubMed

    Dastmalchi, Mehran; Bernards, Mark A; Dhaubhadel, Sangeeta

    2016-03-01

    Isoflavonoids are specialized plant metabolites, almost exclusive to legumes, and their biosynthesis forms a branch of the diverse phenylpropanoid pathway. Plant metabolism may be coordinated at many levels, including formation of protein complexes, or 'metabolons', which represent the molecular level of organization. Here, we have confirmed the existence of the long-postulated isoflavonoid metabolon by identifying elements of the complex, their subcellular localizations and their interactions. Isoflavone synthase (IFS) and cinnamate 4-hydroxylase (C4H) have been shown to be tandem P450 enzymes that are anchored in the ER, interacting with soluble enzymes of the phenylpropanoid and isoflavonoid pathways (chalcone synthase, chalcone reductase and chalcone isomerase). The soluble enzymes of these pathways, whether localized to the cytoplasm or nucleus, are tethered to the ER through interaction with these P450s. The complex is also held together by interactions between the soluble elements. We provide evidence for IFS interaction with upstream and non-consecutive enzymes. The existence of such a protein complex suggests a possible mechanism for flux of metabolites into the isoflavonoid pathway. Further, through interaction studies, we identified several candidates that are associated with GmIFS2, an isoform of IFS, in soybean hairy roots. This list provides additional candidates for various biosynthetic and structural elements that are involved in isoflavonoid production. Our interaction studies provide valuable information about isoform specificity among isoflavonoid enzymes, which may guide future engineering of the pathway in legumes or help overcome bottlenecks in heterologous expression. PMID:26856401

  10. Synthesis of a novel 4H-pyran analog as minor groove binder to DNA using ethidium bromide as fluorescence probe.

    PubMed

    Ramana, M M V; Betkar, Rahul; Nimkar, Amey; Ranade, Prasanna; Mundhe, Balaji; Pardeshi, Sachin

    2016-01-01

    In the present work, isopropyl-6-amino-4-(3,5-bis(trifluoromethyl)phenyl)-5-cyano-2-methyl-4H-pyran-3-carboxylate (4H-pyran analog) has been synthesized by a three component reaction catalyzed by CsOH/γ-Al2O3 and characterized. The interaction of 4H-pyran analog with herring sperm DNA (hs DNA) under physiological conditions (phosphate buffer of pH 7.2) was investigated by UV absorption, FT-IR, fluorescence, (31)P NMR and circular dichroism (CD) spectroscopy. Fluorescence quenching results reveal that static quenching mechanism is involved in binding between 4H-pyran analog and hs DNA. The calculated thermodynamic parameters (ΔH° and ΔS°) indicate that hydrogen bonding plays a major role in binding between them. UV absorption and fluorescence shows the binding mode of 4H-pyran analog with hs DNA as non-intercalative. According to the IR spectroscopy, 4H-pyran analog binds to guanine, thymine, adenine bases of hs DNA but not to phosphate backbone of hs DNA which is also in good agreement with (31)P NMR results. CD and competitive binding experiment results confirms the minor groove binding of 4H-pyran analog to hs DNA. PMID:26208271

  11. Synthesis of a novel 4H-pyran analog as minor groove binder to DNA using ethidium bromide as fluorescence probe

    NASA Astrophysics Data System (ADS)

    Ramana, M. M. V.; Betkar, Rahul; Nimkar, Amey; Ranade, Prasanna; Mundhe, Balaji; Pardeshi, Sachin

    2016-01-01

    In the present work, isopropyl-6-amino-4-(3,5-bis(trifluoromethyl)phenyl)-5-cyano-2-methyl-4H-pyran-3-carboxylate (4H-pyran analog) has been synthesized by a three component reaction catalyzed by CsOH/γ-Al2O3 and characterized. The interaction of 4H-pyran analog with herring sperm DNA (hs DNA) under physiological conditions (phosphate buffer of pH 7.2) was investigated by UV absorption, FT-IR, fluorescence, 31P NMR and circular dichroism (CD) spectroscopy. Fluorescence quenching results reveal that static quenching mechanism is involved in binding between 4H-pyran analog and hs DNA. The calculated thermodynamic parameters (ΔH° and ΔS°) indicate that hydrogen bonding plays a major role in binding between them. UV absorption and fluorescence shows the binding mode of 4H-pyran analog with hs DNA as non-intercalative. According to the IR spectroscopy, 4H-pyran analog binds to guanine, thymine, adenine bases of hs DNA but not to phosphate backbone of hs DNA which is also in good agreement with 31P NMR results. CD and competitive binding experiment results confirms the minor groove binding of 4H-pyran analog to hs DNA.

  12. Vertical conduction mechanism of the epitaxial graphene/n-type 4H-SiC heterojunction at cryogenic temperatures

    NASA Astrophysics Data System (ADS)

    Tadjer, M. J.; Anderson, T. J.; Hobart, K. D.; Nyakiti, L. O.; Wheeler, V. D.; Myers-Ward, R. L.; Gaskill, D. K.; Eddy, C. R.; Kub, F. J.; Calle, F.

    2012-05-01

    Vertical diodes of epitaxial graphene on n- 4H-SiC were investigated. The graphene Raman spectra exhibited a higher intensity in the G-line than the 2D-line, indicative of a few-layer graphene film. Rectifying properties improved at low temperatures as the reverse leakage decreased over six orders of magnitude without freeze-out in either material. Carrier concentration of ˜1016 cm-3 in the SiC remained stable down to 15 K, while accumulation charge decreased and depletion width increased in forward bias. The low barrier height of 0.08 eV and absence of recombination-induced emission indicated majority carrier field emission as the dominant conduction mechanism.

  13. Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks

    NASA Astrophysics Data System (ADS)

    Puybaret, Renaud; Hankinson, John; Palmer, James; Bouvier, Clément; Ougazzaden, Abdallah; Voss, Paul L.; Berger, Claire; de Heer, Walt A.

    2015-04-01

    Selective epitaxial graphene growth is achieved in pre-selected areas on the 4H-SiC(0 0 0 \\bar{1}) C-face with a SiN masking method. The mask decomposes during the growth process leaving a clean, resist free, high temperature annealed graphene surface, in a one-step process. Depending on the off-stoichiometry composition of a Si3 + xN4 mask evaporated on SiC prior to graphitization, the number of layers on the C-face increases (Si-rich) or decreases (N-rich). Graphene grown in masked areas shows excellent quality as observed by Raman spectroscopy, atomic force microscopy and transport data.

  14. Charge transport in 4H-SiC detector structures under conditions of a high electric field

    SciTech Connect

    Ivanov, A. M. Mynbaeva, M. G.; Sadokhin, A. V.; Strokan, N. B.; Lebedev, A. A.

    2009-08-15

    Transport of nonequilibrium charge packets in a structure with a Schottky barrier fabricated on a CVD-grown n-4H-SiC film has been studied at the maximum strength of an electric field at 1.1 MV/cm. The charge was introduced by separate {alpha}-particles and recorded by nuclear spectrometric techniques. A superlinear rise in the recorded charge as a function of the reverse bias applied to the structure was observed. Simultaneously, and also superlinearly increased the scatter in the spectrum of the charge amplitude. The observed effect is attributed to the initial stage of impact ionization. The manifestation of the process at unconventionally low fields ({approx}1 MV/cm) is accounted for by specific features of the process of charge generation. Carriers generated by slowing-down {alpha}-particles are 'hot' from the very beginning.

  15. Hopping conduction range of heavily Al-doped 4H-SiC thick epilayers grown by CVD

    NASA Astrophysics Data System (ADS)

    Ji, Shiyang; Eto, Kazuma; Yoshida, Sadafumi; Kojima, Kazutoshi; Ishida, Yuuki; Saito, Shingo; Tsuchida, Hidekazu; Okumura, Hajime

    2015-12-01

    To outline the hopping conduction range, the electrical characteristics of CVD-grown heavily Al-doped 4H-SiC thick epilayers (2.0 × 1019-4.0 × 1020 cm-3) were investigated in a wide temperature regime (20-900 K). It is found that, below 100 K, hopping conduction dominates the carrier transport for all epilayers, and the corresponding hopping conduction activation energy shows a maximum of ˜30 meV at around 1.1 × 1020 cm-3. With increasing doping level, the temperature dependence of resistivity evolves and finally obeys the ˜1/T1/4 law in the entire temperature regime, which gives direct evidence of variable-range hopping conduction.

  16. Nucleation of c-axis Screw Dislocations at Substrate Surface Damage During 4H-silicon Carbide Homo-epitaxy

    SciTech Connect

    Dudley, M.; Zhang, N; Zhang, Y; Raghothamachar, B; Sanchez, E

    2010-01-01

    Observations of dislocation nucleation occurring at substrate surface scratches during 4H-SiC CVD homoepitaxial growth are reported. Sub-surface residual damage associated with the scratches is observed to act as nucleation sites for basal plane dislocations (BPDs), threading edge dislocations (TEDs) and threading screw dislocations (TSDs) in the epilayer. TEDs and BPDs replicate from the surface intersections of basal plane dislocation half-loops injected into the substrate surface. A model for the nucleation mechanism of TSDs, which nucleate in opposite sign pairs, is presented which involves overgrowth of surface indentations associated with the scratch during step flow growth. Atomic steps which approach these local surface indentations can collapse creating pairs of opposite sign screw dislocations which have Burgers vector magnitude equal to the magnitude of the step disregistry created during the collapse.

  17. Analyzing charge distribution in the termination area of 4H-SiC diodes by measuring depletion-layer capacitance

    NASA Astrophysics Data System (ADS)

    Matsushima, Hiroyuki; Okino, Hiroyuki; Mochizuki, Kazuhiro; Yamada, Renichi

    2016-04-01

    The distribution of positive-charge density at the SiO2/SiC interface of the termination area (Q TM) was analyzed by measuring the depletion-layer capacitance of 4H-SiC PN diodes with different termination structures. A change in Q TM induced by reverse-bias stressing (ΔQ TM) caused a change in the breakdown voltage of the diodes. By comparing the measured depletion-layer capacitance to the simulated value, the initial Q TM (Q\\text{TM}\\text{o}) and the distribution of ΔQ TM were clarified. It is concluded from these results that the distribution of ΔQ TM was not uniform but that positive charges mostly accumulated in the termination area under a high applied electric field.

  18. Diffusion of hydrogen in perfect, p -type doped, and radiation-damaged 4H-SiC

    NASA Astrophysics Data System (ADS)

    Aradi, B.; Deák, P.; Gali, A.; Son, N. T.; Janzén, E.

    2004-06-01

    The diffusion of interstitial atomic hydrogen in 4H-SiC was investigated theoretically, using the local density approximation of density functional theory. We have found that the diffusion barrier in the perfect crystal is ⩽0.6 eV . Comparing this value with the calculated zero point vibration energy of interstitial hydrogen indicates that hydrogen diffuses very rapidly in perfect portions of the SiC lattice, until it gets trapped. In p -doped (B, Al) material the dissociation of the hydrogen-acceptor complexes is the limiting step in diffusion, with a calculated dissociation energy of 2.5 and 1.6 eV for B+H and Al+H , respectively. In irradiated material the trapping and detrapping of hydrogen by silicon vacancies determines the effective diffusion barrier, which lies between 4.0 and 5.3 eV depending on the Fermi level in p -type and weakly n -type material.

  19. Quantitative comparison between Z{sub 1∕2} center and carbon vacancy in 4H-SiC

    SciTech Connect

    Kawahara, Koutarou Suda, Jun; Kimoto, Tsunenobu; Thang Trinh, Xuan; Tien Son, Nguyen; Janzén, Erik

    2014-04-14

    In this study, to reveal the origin of the Z{sub 1∕2} center, a lifetime killer in n-type 4H-SiC, the concentrations of the Z{sub 1∕2} center and point defects are compared in the same samples, using deep level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). The Z{sub 1∕2} concentration in the samples is varied by irradiation with 250 keV electrons with various fluences. The concentration of a single carbon vacancy (V{sub C}) measured by EPR under light illumination can well be explained with the Z{sub 1∕2} concentration derived from C-V and DLTS irrespective of the doping concentration and the electron fluence, indicating that the Z{sub 1∕2} center originates from a single V{sub C}.

  20. High-Field Fast-Risetime Pulse Failures in 4H- and 6H-SiC pn Junction Diodes

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Fazi, Christian

    1996-01-01

    We report the observation of anomalous reverse breakdown behavior in moderately doped (2-3 x 10(exp 17 cm(exp -3)) small-area micropipe-free 4H- and 6H-SiC pn junction diodes. When measured with a curve tracer, the diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140-150 V. However, when subjected to single-shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high-field devices can operate with the same high reliability as silicon power devices.