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Sample records for 4h-sic p-i-n diodes

  1. Strain tunable light emitting diodes with germanium P-I-N heterojunctions

    DOEpatents

    Lagally, Max G; Sanchez Perez, Jose Roberto

    2016-10-18

    Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.

  2. Carbon nanotube intramolecular p-i-n junction diodes with symmetric and asymmetric contacts

    NASA Astrophysics Data System (ADS)

    Chen, Changxin; Liao, Chenghao; Wei, Liangming; Zhong, Hanqing; He, Rong; Liu, Qinran; Liu, Xiaodong; Lai, Yunfeng; Song, Chuanjuan; Jin, Tiening; Zhang, Yafei

    2016-02-01

    A p-i-n junction diode based on the selectively doped single-walled carbon nanotube (SWCNT) had been investigated, in which two opposite ends of individual SWCNT channel were doped into the p- and n-type SWCNT respectively while the middle segment of SWCNT was kept as the intrinsic. The symmetric and asymmetric contacts were used to fabricate the p-i-n junction diodes respectively and studied the effect of the contact on the device characteristics. It was shown that a low reverse saturation current of ~20 pA could be achieved by these both diodes. We found that the use of the asymmetric contact can effectively improve the performance of the p-i-n diode, with the rectification ratio enhanced from ~102 for the device with the Au/Au symmetric contact to >103 for the one with the Pd/Al asymmetric contact. The improvement of the device performance by the asymmetric-contact structure was attributed to the decrease of the effective Schottky-barrier height at the contacts under forward bias, increasing the forward current of the diode. The p-i-n diode with asymmetric contact also had a higher rectification ratio than its counterpart before doping the SWCNT channel, which is because that the p-i-n junction in the device decreased the reverse saturated current.

  3. Carbon nanotube intramolecular p-i-n junction diodes with symmetric and asymmetric contacts

    PubMed Central

    Chen, Changxin; Liao, Chenghao; Wei, Liangming; Zhong, Hanqing; He, Rong; Liu, Qinran; Liu, Xiaodong; Lai, Yunfeng; Song, Chuanjuan; Jin, Tiening; Zhang, Yafei

    2016-01-01

    A p-i-n junction diode based on the selectively doped single-walled carbon nanotube (SWCNT) had been investigated, in which two opposite ends of individual SWCNT channel were doped into the p- and n-type SWCNT respectively while the middle segment of SWCNT was kept as the intrinsic. The symmetric and asymmetric contacts were used to fabricate the p-i-n junction diodes respectively and studied the effect of the contact on the device characteristics. It was shown that a low reverse saturation current of ~20 pA could be achieved by these both diodes. We found that the use of the asymmetric contact can effectively improve the performance of the p-i-n diode, with the rectification ratio enhanced from ~102 for the device with the Au/Au symmetric contact to >103 for the one with the Pd/Al asymmetric contact. The improvement of the device performance by the asymmetric-contact structure was attributed to the decrease of the effective Schottky-barrier height at the contacts under forward bias, increasing the forward current of the diode. The p-i-n diode with asymmetric contact also had a higher rectification ratio than its counterpart before doping the SWCNT channel, which is because that the p-i-n junction in the device decreased the reverse saturated current. PMID:26915400

  4. Diode p-i-n-STRUCTURES Based on Neutron Doped Si1-xGex-ALLOYS

    NASA Astrophysics Data System (ADS)

    Chekanov, V.; Yevseyev, V.; Kuryatkov, V.; Prokofyeva, T.

    Photoelectric properties of neutron transmutation doped (NTD) Si1-xGex solid solutions (alloy) with variable composition are presented. It is shown that the application of NTD method to Si1-xGex solid solutions with gradient composition (x = 0-2 at.%) along an ingot allows to receive p-i-n-structures with typical diode characteristics. We studied electrical and photoelectrical properties of that structure. Deep level transient spectroscopy of p-i-n diode has revealed the energy levels in the forbidden zone of Si1-xGex, connected with transmutation Se impurity. It is established that p-i-n-structures possess high spectral sensitivity with a maximum at hν = 1.2-1.5 eV (300 K). Possible application of Si1-xGex-alloys in development of uncooled photodiodes with large effective area was considered.

  5. A p-i-n junction diode based on locally doped carbon nanotube network

    NASA Astrophysics Data System (ADS)

    Liu, Xiaodong; Chen, Changxin; Wei, Liangming; Hu, Nantao; Song, Chuanjuan; Liao, Chenghao; He, Rong; Dong, Xusheng; Wang, Ying; Liu, Qinran; Zhang, Yafei

    2016-03-01

    A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field in the SWNTs. The results showed that the forward current and the rectification ratio of the diode increased as the doping degree increased. The forward current of the device could also be increased by decreasing the channel length. A high-performance p-i-n junction diode with a high rectification ratio (~104), large forward current (~12.2 μA) and low reverse saturated current (~1.8 nA) was achieved with the OA and PEI doping time of 5 h and 18 h for a channel length of ~6 μm.

  6. A p-i-n junction diode based on locally doped carbon nanotube network

    PubMed Central

    Liu, Xiaodong; Chen, Changxin; Wei, Liangming; Hu, Nantao; Song, Chuanjuan; Liao, Chenghao; He, Rong; Dong, Xusheng; Wang, Ying; Liu, Qinran; Zhang, Yafei

    2016-01-01

    A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field in the SWNTs. The results showed that the forward current and the rectification ratio of the diode increased as the doping degree increased. The forward current of the device could also be increased by decreasing the channel length. A high-performance p-i-n junction diode with a high rectification ratio (~104), large forward current (~12.2 μA) and low reverse saturated current (~1.8 nA) was achieved with the OA and PEI doping time of 5 h and 18 h for a channel length of ~6 μm. PMID:26996610

  7. A p-i-n junction diode based on locally doped carbon nanotube network.

    PubMed

    Liu, Xiaodong; Chen, Changxin; Wei, Liangming; Hu, Nantao; Song, Chuanjuan; Liao, Chenghao; He, Rong; Dong, Xusheng; Wang, Ying; Liu, Qinran; Zhang, Yafei

    2016-03-21

    A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field in the SWNTs. The results showed that the forward current and the rectification ratio of the diode increased as the doping degree increased. The forward current of the device could also be increased by decreasing the channel length. A high-performance p-i-n junction diode with a high rectification ratio (~10(4)), large forward current (~12.2 μA) and low reverse saturated current (~1.8 nA) was achieved with the OA and PEI doping time of 5 h and 18 h for a channel length of ~6 μm.

  8. Monte Carlo estimation of avalanche noise in thin p+-i-n+ GaAs diodes

    NASA Astrophysics Data System (ADS)

    Ong, D. S.; Li, K. F.; Rees, G. J.; David, J. P. R.; Robson, P. N.; Dunn, G. M.

    1998-01-01

    We use a Monte Carlo model to investigate the improvement of avalanche noise performance in thin p+-i-n+ GaAs diodes. The model predicts a decrease in avalanche noise as the multiplication length decreases from 1.0 to 0.05 μm, in good agreement with recent experimental measurements. Our simulations suggest that electron initiated multiplication in short devices has inherently reduced noise despite higher feedback from hole ionization, as compared to long devices. This low noise behavior results from the narrower ionization probability distribution and larger dead space effect as a higher operating electric field needed in short devices.

  9. Planarization of High Aspect Ratio P-I-N Diode Pillar Arrays for Blanket Electrical Contacts

    SciTech Connect

    Voss, L F; Shao, Q; Reinhardt, C E; Graff, R T; Conway, A M; Nikolic, R J; Deo, N; Cheung, C L

    2009-03-05

    Two planarization techniques for high aspect ratio three dimensional pillar structured P-I-N diodes have been developed in order to enable a continuous coating of metal on the top of the structures. The first technique allows for coating of structures with topography through the use of a planarizing photoresist followed by RIE etch back to expose the tops of the pillar structure. The second technique also utilizes photoresist, but instead allows for planarization of a structure in which the pillars are filled and coated with a conformal coating by matching the etch rate of the photoresist to the underlying layers. These techniques enable deposition using either sputtering or electron beam evaporation of metal films to allow for electrical contact to the tops of the underlying pillar structure. These processes have potential applications for many devices comprised of 3-D high aspect ratio structures. Two separate processes have been developed in order to ensure a uniform surface for deposition of an electrode on the {sup 10}Boron filled P-I-N pillar structured diodes. Each uses S1518 photoresist in order to achieve a relatively uniform surface despite the non-uniformity of the underlying detector. Both processes allow for metallization of the final structure and provide good electrical continuity over a 3D pillar structure.

  10. Investigation of the polysilicon p-i-n diode and diode string as a process compatible and portable ESD protection device

    NASA Astrophysics Data System (ADS)

    Yibo, Jiang; Huan, Du; Zhengsheng, Han

    2012-07-01

    The polysilicon p-i-n diode displays noticeable process compatibility and portability in advanced technologies as an electrostatic-discharge (ESD) protection device. This paper presents the reverse breakdown, current leakage and capacitance characteristics of fabricated polysilicon p-i-n diodes. To evaluate the ESD robustness, the forward and reverse TLP I-V characteristics were measured. The polysilicon p-i-n diode string was also investigated to further reduce capacitance and fulfill the requirements of tunable cut-in or reverse breakdown voltage. Finally, to explain the effects of the device parameters, we analyze and discuss the inherent properties of polysilicon p-i-n diodes.

  11. Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes

    DOE PAGES

    King, M. P.; Armstrong, A. M.; Dickerson, J. R.; Vizkelethy, G.; Fleming, R. M.; Campbell, J.; Wampler, W. R.; Kizilyalli, I. C.; Bour, D. P.; Aktas, O.; et al

    2015-10-29

    Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence <; 1013 cm-2. Furthermore, the unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaN P-i-Ns remainmore » superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.« less

  12. Dead layer on silicon p-i-n diode charged-particle detectors

    NASA Astrophysics Data System (ADS)

    Wall, B. L.; Amsbaugh, J. F.; Beglarian, A.; Bergmann, T.; Bichsel, H. C.; Bodine, L. I.; Boyd, N. M.; Burritt, T. H.; Chaoui, Z.; Corona, T. J.; Doe, P. J.; Enomoto, S.; Harms, F.; Harper, G. C.; Howe, M. A.; Martin, E. L.; Parno, D. S.; Peterson, D. A.; Petzold, L.; Renschler, P.; Robertson, R. G. H.; Schwarz, J.; Steidl, M.; Van Wechel, T. D.; VanDevender, B. A.; Wüstling, S.; Wierman, K. J.; Wilkerson, J. F.

    2014-04-01

    Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon p-i-n diode used in the KATRIN neutrino-mass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra to the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the "dead" layer evidently escapes by diffusion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer from which no charge is collected is strongly disfavored.

  13. Quantum oscillations in the photocurrent of GaAs/AlAs p-i-n diodes

    NASA Astrophysics Data System (ADS)

    Vdovin, E. E.; Ashdown, M.; Patanè, A.; Eaves, L.; Campion, R. P.; Khanin, Yu. N.; Henini, M.; Makarovsky, O.

    2014-05-01

    We report large amplitude quantum oscillations and negative differential conductance in the bias voltage-dependent photocurrent of p-i-n GaAs diodes with an AlAs barrier in the intrinsic (i) region. The oscillations appear only when the devices are illuminated with above-band gap radiation. They are strongly suppressed by a weak (˜2 T) in-plane magnetic field. Their period, amplitude, and magnetic field dependence are explained in terms of the quantized motion of confined photoexcited electrons and holes in the triangular potential wells formed by the AlAs barrier and the strong electric field in the intrinsic region. With increasing electric field, the energy levels of the electrons (holes) successively reach the top of their confining potentials, thus leading to a larger overlap of their wave functions with the free carriers in the p- (and n-) doped electrodes and to the observed oscillatory modulation of the recombination rate and photocurrent as a function of the applied voltage. The effect on the photocurrent oscillations amplitude of placing a layer of InAs quantum dots in the AlAs barrier layer is also examined.

  14. Dead layer on silicon p-i-n diode charged-particle detectors

    SciTech Connect

    Wall, B. L.; Amsbaugh, John F.; Beglarian, A.; Bergmann, T.; Bichsel, H. C.; Bodine, L. I.; Boyd, N. M.; Burritt, Tom H.; Chaoui, Z.; Corona, T. J.; Doe, Peter J.; Enomoto, S.; Harms, F.; Harper, Gregory; Howe, M. A.; Martin, E. L.; Parno, D. S.; Peterson, David; Petzold, Linda; Renschler, R.; Robertson, R. G. H.; Schwarz, J.; Steidl, M.; Van Wechel, T. D.; VanDevender, Brent A.; Wustling, S.; Wierman, K. J.; Wilkerson, J. F.

    2014-04-21

    Abstract Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon p-i-n diode used in the KATRIN neutrinomass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra to the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the "dead" layer evidently escapes by discussion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer from which no charge is collected is strongly disfavored.

  15. Lead Halide Perovskite Photovoltaic as a Model p-i-n Diode.

    PubMed

    Miyano, Kenjiro; Tripathi, Neeti; Yanagida, Masatoshi; Shirai, Yasuhiro

    2016-02-16

    The lead halide perovskite photovoltaic cells, especially the iodide compound CH3NH3PbI3 family, exhibited enormous progress in the energy conversion efficiency in the past few years. Although the first attempt to use the perovskite was as a sensitizer in a dye-sensitized solar cell, it has been recognized at the early stage of the development that the working of the perovskite photovoltaics is akin to that of the inorganic thin film solar cells. In fact, theoretically perovskite is always treated as an ordinary direct band gap semiconductor and hence the perovskite photovoltaics as a p-i-n diode. Despite this recognition, research effort along this line of thought is still in pieces and incomplete. Different measurements have been applied to different types of devices (different not only in the materials but also in the cell structures), making it difficult to have a coherent picture. To make the situation worse, the perovskite photovoltaics have been plagued by the irreproducible optoelectronic properties, most notably the sweep direction dependent current-voltage relationship, the hysteresis problem. Under such circumstances, it is naturally very difficult to analyze the data. Therefore, we set out to make hysteresis-free samples and apply time-tested models and numerical tools developed in the field of inorganic semiconductors. A series of electrical measurements have been performed on one type of CH3NH3PbI3 photovoltaic cells, in which a special attention was paid to ensure that their electronic reproducibility was better than the fitting error in the numerical analysis. The data can be quantitatively explained in terms of the established models of inorganic semiconductors: current/voltage relationship can be very well described by a two-diode model, while impedance spectroscopy revealed the presence of a thick intrinsic layer with the help of a numerical solver, SCAPS, developed for thin film solar cell analysis. These results point to that CH3NH3PbI3 is an

  16. Lead Halide Perovskite Photovoltaic as a Model p-i-n Diode.

    PubMed

    Miyano, Kenjiro; Tripathi, Neeti; Yanagida, Masatoshi; Shirai, Yasuhiro

    2016-02-16

    The lead halide perovskite photovoltaic cells, especially the iodide compound CH3NH3PbI3 family, exhibited enormous progress in the energy conversion efficiency in the past few years. Although the first attempt to use the perovskite was as a sensitizer in a dye-sensitized solar cell, it has been recognized at the early stage of the development that the working of the perovskite photovoltaics is akin to that of the inorganic thin film solar cells. In fact, theoretically perovskite is always treated as an ordinary direct band gap semiconductor and hence the perovskite photovoltaics as a p-i-n diode. Despite this recognition, research effort along this line of thought is still in pieces and incomplete. Different measurements have been applied to different types of devices (different not only in the materials but also in the cell structures), making it difficult to have a coherent picture. To make the situation worse, the perovskite photovoltaics have been plagued by the irreproducible optoelectronic properties, most notably the sweep direction dependent current-voltage relationship, the hysteresis problem. Under such circumstances, it is naturally very difficult to analyze the data. Therefore, we set out to make hysteresis-free samples and apply time-tested models and numerical tools developed in the field of inorganic semiconductors. A series of electrical measurements have been performed on one type of CH3NH3PbI3 photovoltaic cells, in which a special attention was paid to ensure that their electronic reproducibility was better than the fitting error in the numerical analysis. The data can be quantitatively explained in terms of the established models of inorganic semiconductors: current/voltage relationship can be very well described by a two-diode model, while impedance spectroscopy revealed the presence of a thick intrinsic layer with the help of a numerical solver, SCAPS, developed for thin film solar cell analysis. These results point to that CH3NH3PbI3 is an

  17. Electrically injected near-infrared light emission from single InN nanowire p-i-n diode

    SciTech Connect

    Le, Binh Huy; Zhao, Songrui; Tran, Nhung Hong; Mi, Zetian

    2014-12-08

    We report on the achievement of electroluminescence emission of single InN p-i-n nanowire devices. InN p-i-n nanowire structures were grown directly on Si substrate by plasma-assisted molecular beam epitaxy and subsequently transferred to foreign substrate for the fabrication of single nanowire light emitting diodes. Electroluminescence emission with a peak energy of 0.71 eV (1.75 μm) was observed at 77 K. The measurement of near-bandgap electroluminescence provides unambiguous evidence for the achievement of p-type conduction of InN.

  18. Si nanocrystal p-i-n diodes fabricated on quartz substrates for third generation solar cell applications

    SciTech Connect

    Perez-Wurfl, Ivan; Hao Xiaojing; Gentle, Angus; Conibeer, Gavin; Green, Martin A.; Kim, Dong-Ho

    2009-10-12

    We fabricated p-i-n diodes by sputtering alternating layers of silicon dioxide and silicon rich oxide with a nominal atomic ratio O/Si=0.7 onto quartz substrates with in situ boron for p-type and phosphorus for n-type doping. After crystallization, dark and illuminated I-V characteristics show a diode behavior with an open circuit voltage of 373 mV. Due to the thinness of the layers and their corresponding high resistivity, lateral current flow results in severe current crowding. This effect is taken into account when extracting the electronic bandgap based on temperature dependent diode I-V measurements.

  19. Current impulse response of thin InP p+-i-n+ diodes using full band structure Monte Carlo method

    NASA Astrophysics Data System (ADS)

    You, A. H.; Cheang, P. L.

    2007-02-01

    A random response time model to compute the statistics of the avalanche buildup time of double-carrier multiplication in avalanche photodiodes (APDs) using full band structure Monte Carlo (FBMC) method is discussed. The effect of feedback impact ionization process and the dead-space effect on random response time are included in order to simulate the speed of APD. The time response of InP p+-i-n+ diodes with the multiplication region of 0.2μm is presented. Finally, the FBMC model is used to calculate the current impulse response of the thin InP p+-i-n+ diodes with multiplication lengths of 0.05 and 0.2μm using Ramo's theorem [Proc. IRE 27, 584 (1939)]. The simulated current impulse response of the FBMC model is compared to the results simulated from a simple Monte Carlo model.

  20. Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

    NASA Astrophysics Data System (ADS)

    Tanaka, Atsushi; Matsuhata, Hirofumi; Kawabata, Naoyuki; Mori, Daisuke; Inoue, Kei; Ryo, Mina; Fujimoto, Takumi; Tawara, Takeshi; Miyazato, Masaki; Miyajima, Masaaki; Fukuda, Kenji; Ohtsuki, Akihiro; Kato, Tomohisa; Tsuchida, Hidekazu; Yonezawa, Yoshiyuki; Kimoto, Tsunenobu

    2016-03-01

    The growth of Shockley type stacking faults in p-i-n diodes fabricated on the C-face of 4H-SiC during forward current operation was investigated using Berg-Barrett X-ray topography and photoluminescence imaging. After forward current experiment, Shockley type stacking faults were generated from very short portions of basal plane dislocations lower than the conversion points to threading edge dislocations in the epitaxial layer. The growth behavior of Shockley type stacking faults was discussed. Growth of stacking faults in the substrates was not observed.

  1. Bistable electroluminescence in p-i-n light-emitting tunnel-diodes enhanced by aperiodic-superlattice injectors

    NASA Astrophysics Data System (ADS)

    Cao, S. M.; Willander, M.; Toropov, A. A.; Shubina, T. V.; Mel'tser, B. Ya.; Kop'ev, P. S.; Lundström, T.; Holtz, P. O.; Bergman, J. P.; Monemar, B.

    1998-01-01

    A p-i-n resonant tunnel diode is designed and investigated using photoluminescence (PL) spectroscopy. The device is based on an Al0.4Ga0.6As/GaAs graded-index waveguide heterostructure enhanced by aperiodic-superlattice injectors for simultaneous resonant injection of electrons and heavy holes. The bias-dependent study of photocurrent, electroluminescence (EL) and PL show strong resonance behavior in the optical intensity confirming the field-dependent resonant injection of the excited states in the emission layers. Pronounced voltage-current bistability due to injection efficiency leads to multiple-wavelength EL and lasing action.

  2. Comprehensive physics-based compact model for fast p-i-n diode using MATLAB and Simulink

    NASA Astrophysics Data System (ADS)

    Xue, Peng; Fu, Guicui; Zhang, Dong

    2016-07-01

    In this study, a physics-based model for the fast p-i-n diode is proposed. The model is based on the 1-D Fourier-based solution of ambipolar diffusion equation (ADE) implemented in MATLAB and Simulink. The physical characteristics of fast diode design concepts such as local lifetime control (LLC), emitter control (EMCON) and deep field stop are taken into account. Based on these fast diode design concepts, the ADE is solved for all injection levels instead of high-level injection only as usually done. The variation of high-level lifetime due to local lifetime control is also included in the solution. With the deep field stop layer taken into consideration, the depletion behavior in the N-base during reverse recovery is redescribed. Some physical effects such as avalanche generation and carrier recombination in the depletion region are also taken into account. To be self contained, a parameter extraction method is proposed to extract all the parameters of the model. In the end, the static and reverse recovery experiments for a commercial EMCON diode and a LLC diode are used to validate the proposed model. The simulation results are compared with experiment results and good agreement is obtained.

  3. Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes

    SciTech Connect

    King, M. P.; Armstrong, A. M.; Dickerson, J. R.; Vizkelethy, G.; Fleming, R. M.; Campbell, J.; Wampler, W. R.; Kizilyalli, I. C.; Bour, D. P.; Aktas, O.; Nie, H.; Disney, D.; Wierer, Jr., J.; Allerman, A. A.; Moseley, M. W.; Kaplar, R. J.

    2015-10-29

    Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence <; 1013 cm-2. Furthermore, the unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaN P-i-Ns remain superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.

  4. Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes

    NASA Astrophysics Data System (ADS)

    Awan, I. T.; Galeti, H. V. A.; Galvão Gobato, Y.; Brasil, M. J. S. P.; Taylor, D.; Henini, M.

    2014-08-01

    In this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by ˜20 meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of ˜-75% at 15 T). These effects may be explored to design novel devices for spintronic applications such as a high-frequency spin-oscillators.

  5. Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes

    SciTech Connect

    Awan, I. T.; Galvão Gobato, Y.; Galeti, H. V. A.; Brasil, M. J. S. P.; Taylor, D.; Henini, M.

    2014-08-07

    In this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by ∼20 meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of ∼−75% at 15 T). These effects may be explored to design novel devices for spintronic applications such as a high-frequency spin-oscillators.

  6. Optimizing photon-pair generation electronically using a p-i-n diode incorporated in a silicon microring resonator

    SciTech Connect

    Savanier, Marc Kumar, Ranjeet; Mookherjea, Shayan

    2015-09-28

    Silicon photonic microchips may be useful for compact, inexpensive, room-temperature optically pumped photon-pair sources, which unlike conventional photon-pair generators based on crystals or optical fibers, can be manufactured using CMOS-compatible processes on silicon wafers. It has been shown that photon pairs can be created in simple structures such as microring resonators at a rate of a few hundred kilohertz using less than a milliwatt of optical pump power, based on the process of spontaneous four-wave mixing. To create a practical photon-pair source, however, also requires some way of monitoring the device and aligning the pump wavelength when the temperature varies, since silicon resonators are highly sensitive to temperature. In fact, monitoring photodiodes are standard components in classical laser diodes, but the incorporation of germanium or InGaAs photodiodes would raise the cost and fabrication complexity. Here, we present a simple and effective all-electronic technique for finding the optimum operating point for the microring used to generate photon pairs, based on measuring the reverse-biased current in a silicon p-i-n junction diode fabricated across the waveguide that constitutes the silicon microring. We show that by monitoring the current, and using it to tune the pump laser wavelength, the photon-pair generation properties of the microring can be preserved over a temperature range of more than 30 °C.

  7. A recoil-proton spectrometer based on a p-i-n diode implementing pulse-shape discrimination.

    PubMed

    Agosteo, S; D'Angelo, G; Fazzi, A; Foglio Para, A; Pola, A; Ventura, L; Zotto, P

    2004-01-01

    A recoil-proton spectrometer was created by coupling a p-i-n diode with a polyethylene converter. The maximum detectable energy, imposed by the thickness of the totally depleted layer, is approximately 6 MeV. The minimum detectable energy is limited by the contribution of secondary electrons generated by photons in the detector assembly. This limit is approximately 1.5 MeV at full-depletion voltage and was decreased using pulse-shape discrimination. The diode was set up in the 'reverse-injection' configuration (i.e. with the N+ layer adjacent to the converter). This configuration provides longer collection times for the electron-hole pairs generated by the recoil-protons. The pulse-shape discrimination was based on the zero-crossing time of bipolar signals from a (CR)2-(RC)2 filter. The detector was characterised using monoenergetic neutrons generated in the Van De Graaff CN accelerator at the INFN-Laboratori Nazionali di Legnaro. The energy limit for discrimination proved to be approximately 900 keV. PMID:15353700

  8. Optimizing photon-pair generation electronically using a p-i-n diode incorporated in a silicon microring resonator

    NASA Astrophysics Data System (ADS)

    Savanier, Marc; Kumar, Ranjeet; Mookherjea, Shayan

    2015-09-01

    Silicon photonic microchips may be useful for compact, inexpensive, room-temperature optically pumped photon-pair sources, which unlike conventional photon-pair generators based on crystals or optical fibers, can be manufactured using CMOS-compatible processes on silicon wafers. It has been shown that photon pairs can be created in simple structures such as microring resonators at a rate of a few hundred kilohertz using less than a milliwatt of optical pump power, based on the process of spontaneous four-wave mixing. To create a practical photon-pair source, however, also requires some way of monitoring the device and aligning the pump wavelength when the temperature varies, since silicon resonators are highly sensitive to temperature. In fact, monitoring photodiodes are standard components in classical laser diodes, but the incorporation of germanium or InGaAs photodiodes would raise the cost and fabrication complexity. Here, we present a simple and effective all-electronic technique for finding the optimum operating point for the microring used to generate photon pairs, based on measuring the reverse-biased current in a silicon p-i-n junction diode fabricated across the waveguide that constitutes the silicon microring. We show that by monitoring the current, and using it to tune the pump laser wavelength, the photon-pair generation properties of the microring can be preserved over a temperature range of more than 30 °C.

  9. Temperature dependent electroluminescence from all-Si-nanocrystal p-i-n diodes grown on dielectric substrates

    NASA Astrophysics Data System (ADS)

    Wu, L.; Puthen-Veettil, B.; Nomoto, K.; Hao, X.; Jia, X.; Lin, Z.; Yang, T. C.; Zhang, T.; Gutsch, S.; Conibeer, G.; Perez-Wurfl, I.

    2016-02-01

    In this work, we demonstrate for the first time the electroluminescence (EL) from a mesa isolated p-i-n diode based on silicon nanocrystals (Si NCs) embedded in a SiO2 matrix fabricated on a dielectric substrate. The structure fabricated on a dielectric substrate ensures that the EL signal originates entirely from the Si NC material. A small offset between the EL (1.28 eV) and photoluminescence (PL) (1.33 eV) peak energies has been observed at room temperature. We attribute this discrepancy to the different subset of light-emitting Si NCs in EL and PL. A model classifying Si NCs into connected NCs and isolated NCs is proposed. Atom probe tomography is employed to visualize the existence of isolated NCs and connected NCs. This model has been further studied using temperature dependent EL and PL, where a blue-shift of peak energy is observed as the temperature is increased. The blue-shift is attributed to the temperature dependent transport between the two subsets of NCs and the quenching of the PL emission from the connected NCs at higher temperatures.

  10. Effect of Longitudinal Optical Phonon--Plasmon Coupling on the Transient Self-Consistent Field in GaAs p--i--n Diodes

    NASA Astrophysics Data System (ADS)

    Thao, Dinh Nhu; The, Nguyen Phuoc

    2013-10-01

    The effect of longitudinal optical (LO) phonon--coherent plasmon coupling on the transient self-consistent field and then on frequency spectra of collective oscillations in GaAs p--i--n diodes without a biased field is investigated by the self-consistent ensemble Monte Carlo method. The frequency spectra of collective oscillations in the diodes show that there are two new strong peaks in the terahertz range when the coupling is taken into account. These peaks replace the coupled phonon--plasmon peaks in the bulk semiconductor.

  11. Development of high temperature diffusion technology for edge termination and switching behavior improvement of silicon carbide p-i-n diodes

    NASA Astrophysics Data System (ADS)

    Bolotnikov, Alexander V.

    forward voltage drop (3.3 V at 100 A/cm2) and high blocking voltage (more than 2500 V). A fabrication technology of p-i-n diodes with reduced switching losses through the incorporation of deep recombination centers via diffusion of boron was developed. The improvement of reverse recovery characteristic is attributed to the effect of localized lifetime control by recombination centers created by diffused boron. It is demonstrated that p-i-n diodes produced by high temperature diffusion exhibit better switching capability compared to epi-grown p-i-n diodes. The improved behavior is attributed to the reduced lifetime region created by the diffused boron layer. The good performance of SiC devices fabricated with diffusion implementation confirmed the viability of this process.

  12. Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p+-i-n+ diodes

    NASA Astrophysics Data System (ADS)

    Ong, D. S.; Li, K. F.; Plimmer, S. A.; Rees, G. J.; David, J. P. R.; Robson, P. N.

    2000-06-01

    A full-band Monte Carlo model is used to investigate the probability distribution functions of impact ionization path length and impact ionization energy for electrons and holes in GaAs. The simulations show that the soft ionization threshold energy in GaAs allows impact ionization to occur at energies much higher than the band gap. As a result, secondary carriers have a shorter dead space than newly injected carriers. The ionization path length distributions narrow at higher fields, producing a more deterministic impact ionization process in thin devices. The model is also used to simulate avalanche multiplication and noise in submicron homojunction GaAs p+-i-n+ diodes. The predicted mean multiplication, and excess noise factor, F are in quantitative agreement with the experimental results, in which F decreases as the length of multiplication region is reduced.

  13. Fabrication and characterization of silicon nanowire p-i-n MOS gated diode for use as p-type tunnel FET

    NASA Astrophysics Data System (ADS)

    Brouzet, V.; Salem, B.; Periwal, P.; Rosaz, G.; Baron, T.; Bassani, F.; Gentile, P.; Ghibaudo, G.

    2015-11-01

    In this paper, we present the fabrication and electrical characterization of a MOS gated diode based on axially doped silicon nanowire (NW) p-i-n junctions. These nanowires are grown by chemical vapour deposition (CVD) using the vapour-liquid-solid (VLS) mechanism. NWs have a length of about 7 \\upmu {m} with 3 \\upmu {m} of doped regions (p-type and n-type) and 1 \\upmu {m} of intrinsic region. The gate stack is composed of 15 nm of hafnium dioxide ({HfO}2), 80 nm of nickel and 120 nm of aluminium. At room temperature, I_{{on}} =-52 {nA}/\\upmu {m} (V_{{DS}}=-0.5 {V}, V_{{GS}}=-4 {V}), and an I_{{on}}/I_{{off}} ratio of about 104 with a very low I_{{off}} current has been obtained. Electrical measurements are carried out between 90 and 390 K, and we show that the I on current is less temperature dependent below 250 K. We also observe that the ON current is increasing between 250 and 390 K. These transfer characteristics at low and high temperature confirm the tunnelling transport mechanisms in our devices.

  14. Effect of tunable dot charging on photoresponse spectra of GaAs p-i-n diode with InAs quantum dots

    SciTech Connect

    Shang, Xiangjun; Yu, Ying; Li, Mifeng; Wang, Lijuan; Zha, Guowei; Ni, Haiqiao; Niu, Zhichuan; Pettersson, Håkan

    2015-12-28

    Quantum dot (QD)-embedded photodiodes have demonstrated great potential for use as detectors. A modulation of QD charging opens intriguing possibilities for adaptive sensing with bias-tunable detector characteristics. Here, we report on a p-i-n GaAs photodiode with InAs QDs whose charging is tunable due to unintentional Be diffusion and trap-assisted tunneling of holes, from bias- and temperature (T)-dependent photocurrent spectroscopy. For the sub-bandgap spectra, the T-dependent relative intensities “QD-s/WL” and “WL/GaAs” (WL: wetting layer) indicate dominant tunneling under −0.9 V (trap-assisted tunneling from the top QDs) and dominant thermal escape under −0.2 ∼ 0.5 V (from the bottom QDs since the top ones are charged and inactive for optical absorption) from the QD s-state, dominant tunneling from WL, and enhanced QD charging at >190 K (related to trap level ionization). For the above-bandgap spectra, the degradation of the spectral profile (especially near the GaAs bandedge) as the bias and T tune (especially under −0.2 ∼ 0.2 V and at >190 K) can be explained well by the enhanced photoelectron capture in QDs with tunable charging. The dominant spectral profile with no degradation under 0.5 V is due to a saturated electron capture in charged QDs (i.e., charging neutralization). QD level simulation and schematic bandstructures can help one understand these effects.

  15. Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

    SciTech Connect

    Kao, Kuo-Hsing; Meyer, Kristin De; Verhulst, Anne S.; Rooyackers, Rita; Douhard, Bastien; Delmotte, Joris; Bender, Hugo; Richard, Olivier; Vandervorst, Wilfried; Simoen, Eddy; Hikavyy, Andriy; Loo, Roger; Arstila, Kai; Collaert, Nadine; Thean, Aaron; Heyns, Marc M.

    2014-12-07

    Band-to-band tunneling parameters of strained indirect bandgap materials are not well-known, hampering the reliability of performance predictions of tunneling devices based on these materials. The nonlocal band-to-band tunneling model for compressively strained SiGe is calibrated based on a comparison of strained SiGe p-i-n tunneling diode measurements and doping-profile-based diode simulations. Dopant and Ge profiles of the diodes are determined by secondary ion mass spectrometry and capacitance-voltage measurements. Theoretical parameters of the band-to-band tunneling model are calculated based on strain-dependent properties such as bandgap, phonon energy, deformation-potential-based electron-phonon coupling, and hole effective masses of strained SiGe. The latter is determined with a 6-band k·p model. The calibration indicates an underestimation of the theoretical electron-phonon coupling with nearly an order of magnitude. Prospects of compressively strained SiGe tunneling transistors are made by simulations with the calibrated model.

  16. Semiconductor P-I-N detector

    DOEpatents

    Sudharsanan, Rengarajan; Karam, Nasser H.

    2001-01-01

    A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

  17. Intrinsic region length scaling of heavily doped carbon nanotube p-i-n junctions

    NASA Astrophysics Data System (ADS)

    Li, Zheng; Zheng, Jiaxin; Ni, Zeyuan; Quhe, Ruge; Wang, Yangyang; Gao, Zhengxiang; Lu, Jing

    2013-07-01

    We investigated the dependence of the transport properties of heavily doped intratube single-walled carbon nanotube (SWCNT) p-i-n junctions on the length of the intrinsic region by using empirical self-consistent quantum transport simulations. When the length of the intrinsic region is scaled from a few angstroms to over 10 nanometers, the SWCNT p-i-n junction evolves from a tunneling diode with a large negative rectification and large negative differential resistance to one with a large positive rectification (like a conventional positive rectifying diode). The critical length of the intrinsic length is about 8.0 nm. Therefore, one can obtain nanoscale diodes of different performance types by changing the intrinsic region length.We investigated the dependence of the transport properties of heavily doped intratube single-walled carbon nanotube (SWCNT) p-i-n junctions on the length of the intrinsic region by using empirical self-consistent quantum transport simulations. When the length of the intrinsic region is scaled from a few angstroms to over 10 nanometers, the SWCNT p-i-n junction evolves from a tunneling diode with a large negative rectification and large negative differential resistance to one with a large positive rectification (like a conventional positive rectifying diode). The critical length of the intrinsic length is about 8.0 nm. Therefore, one can obtain nanoscale diodes of different performance types by changing the intrinsic region length. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr01462b

  18. Polymer light-emitting electrochemical cells with frozen p-i-n junction

    SciTech Connect

    Gao, J.; Yu, G.; Heeger, A.J. |

    1997-09-01

    The p-i-n junction in a polymer light-emitting electrochemical cell (LEC) is stabilized by cooling the device below the glass transition temperature of the ion-transport polymer. LECs with frozen p-i-n junctions exhibit typical light emitting diode (LED) behavior including diode rectification, unipolar light emission (same polarity as that used for generating the junction), and fast response. The freezeout of ion motion allows polymer LECs to be driven at bias voltages well beyond the electrochemical stability window, and thereby extends the potential applications of polymer LECs to high pixel density, column-row addressable displays. {copyright} {ital 1997 American Institute of Physics.}

  19. Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon.

    PubMed

    Nam, Ju Hyung; Afshinmanesh, Farzaneh; Nam, Donguk; Jung, Woo Shik; Kamins, Theodore I; Brongersma, Mark L; Saraswat, Krishna C

    2015-06-15

    A germanium-on-insulator (GOI) p-i-n photodetector, monolithically integrated on a silicon (Si) substrate, is demonstrated. GOI is formed by lateral-overgrowth (LAT-OVG) of Ge on silicon dioxide (SiO(2)) through windows etched in SiO(2) on Si. The photodetector shows excellent diode characteristics with high on/off ratio (6 × 10(4)), low dark current, and flat reverse current-voltage (I-V) characteristics. Enhanced light absorption up to 1550 nm is observed due to the residual biaxial tensile strain induced during the epitaxial growth of Ge caused by cooling after the deposition. This truly Si-compatible Ge photodetector using monolithic integration enables new opportunities for high-performance GOI based photonic devices on Si platform.

  20. Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate

    SciTech Connect

    Liu, Zhi; Li, Yaming; He, Chao; Li, Chuanbo; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen Wang, Qiming

    2014-05-12

    Horizontal injection Ge p-i-n ridge waveguide light emitting diodes (LEDs) were fabricated on n{sup −}-Si(001) substrates by ultrahigh vacuum chemical vapor deposition. The direct-bandgap electroluminescence (EL) of Ge waveguide LEDs under a continuous/pulse electrical pump was studied. The heating effect from a continuous electrical pump was found to significantly enhance the emission of devices. The top surface EL intensity of the Ge waveguide LEDs significantly depended on the position. Most direct-bandgap radiative recombination of Ge p-i-n waveguide LEDs occurred near the N{sup +} region of the junction. This interesting phenomenon could be explained by the carrier distribution in the junction and the pseudo-direct bandgap of Ge.

  1. In0.53Ga0.47As p-i-n photodiodes with transparent cadmium tin oxide contacts

    NASA Astrophysics Data System (ADS)

    Berger, Paul R.; Dutta, Niloy K.; Zydzik, George; O'Bryan, H. M.; Keller, Ursula; Smith, Peter R.; Lopata, John; Sivco, D.; Cho, A. Y.

    1992-10-01

    A new type of p-i-n In0.53Ga0.47As photodiode having an optically transparent composite top electrode consisting of a thin semitransparent metal layer and a transparent cadmium tin oxide (CTO) layer was investigated. The composite functions as the n or p contact, an optical window, and an antireflection coating. The transparent contact also prevents shadowing of the active layer by the top electrode, thus allowing greater collection of incident light. Since the CTO contact is nonalloyed, interdiffusion into the i-region is not relevant avoiding an increased dark current. The photodiodes exhibited leakage currents of ≤8 nA and some as low as 23 pA, with reverse breakdown voltages of ≥15-17 V. Responsivity was measured using a 1.55 μm InGaAsP diode laser focused onto an unpassivated 60 μm diam p-i-n photodiode and was ≥0.41 A/W. Photoresponse of the diodes to 3 ps pulses from a Nd:YLF laser (λ=1.047 μm) was 169 and 86 ps for the 60 and 9 μm diodes, respectively. The maximum frequency response of the 9 μm diode is packaging limited, and is expected to have an intrinsic response time of 20-30 ps.

  2. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

    PubMed Central

    Rao, Sandro; Pangallo, Giovanni; Della Corte, Francesco Giuseppe

    2016-01-01

    Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature. PMID:26751446

  3. Temperature dependent characterization of gallium arsenide X-ray mesa p-i-n photodiodes

    NASA Astrophysics Data System (ADS)

    Lioliou, G.; Meng, X.; Ng, J. S.; Barnett, A. M.

    2016-03-01

    Electrical characterization of two GaAs p+-i-n+ mesa X-ray photodiodes over the temperature range 0 °C to 120 °C together with characterization of one of the diodes as an X-ray detector over the temperature range 0 °C to 60 °C is reported as part of the development of photon counting X-ray spectroscopic systems for harsh environments. The randomly selected diodes were fully etched and unpassivated. The diodes were 200 μm in diameter and had 7 μm thick i layers. The leakage current density was found to increase from (3 ± 1) nA/cm-2 at 0 °C to (24.36 ± 0.05) μA/cm-2 at 120 °C for D1 and from a current density smaller than the uncertainty (0.2 ± 1.2) nA/cm-2 at 0 °C to (9.39 ± 0.02) μA/cm-2 at 120 °C for D2 at the maximum investigated reverse bias (15 V). The best energy resolution (FWHM at 5.9 keV) was achieved at 5 V reverse bias, at each temperature; 730 eV at 0 °C, 750 eV at 20 °C, 770 eV at 40 °C, and 840 eV at 60 °C. It was found that the parallel white noise was the main source of the photopeak broadening only when the detector operated at 60 °C, at 5 V, 10 V, and 15 V reverse bias and at long shaping times (>5 μs), whereas the sum of the dielectric noise and charge trapping noise was the dominant source of noise for all the other spectra.

  4. Development of a P-I-N HgCdTe photomixer for laser heterodyne spectrometry

    NASA Technical Reports Server (NTRS)

    Bratt, Peter R.

    1987-01-01

    An improved HgCdTe photomixer technology was demonstrated employing a p-i-n photodiode structure. The i-region was near intrinsic n-type HgCdTe; the n-region was formed by B+ ion implantation; and the p-region was formed either by a shallow Au diffusion or by a Pt Schottky barrier. Experimental devices in a back-side illuminated mesa diode configuration were fabricated, tested, and delivered. The best photomixer was packaged in a 24-hour LN2 dewar along with a cooled GaAs FET preamplifier. Testing was performed by mixing black-body radiation with a CO2 laser beam and measuring the IF signal, noise, and signal-to-noise ratio in the GHz frequency range. Signal bandwidth for this photomixer was 1.3 GHz. The heterodyne NEP was 4.4 x 10 to the -20 W/Hz out to 1 GHz increasing to 8.6 x 10 to the -10 W/Hz at 2 GHz. Other photomixers delivered on this program had heterodyne NEPs at 1 GHz ranging from 8 x 10 to the -20 to 4.4 x 10 to the -19 W/Hz and NEP bandwidths from 2 to 4 GHz.

  5. Characterization of gallium arsenide X-ray mesa p-i-n photodiodes at room temperature

    NASA Astrophysics Data System (ADS)

    Lioliou, G.; Meng, X.; Ng, J. S.; Barnett, A. M.

    2016-03-01

    Two GaAs mesa p+-i-n+ photodiodes intended for photon counting X-ray spectroscopy, having an i layer thickness of 7 μm and diameter of 200 μm, have been characterized electrically, for their responsivity at the wavelength range 580 nm to 980 nm and one of them for its performance at detection of soft X-rays, at room temperature. Dark current and capacitance measurements as a function of applied forward and reverse bias are presented. The results show low leakage current densities, in the range of nA/cm2 at the maximum internal electric field (22 kV/cm). The unintentional doping concentration of the i layer, calculated from capacitance measurements, was found to be <1014 cm-3. Photocurrent measurements were performed under visible and near infrared light illumination for both diodes. The analysis of these measurements suggests the presence of a non-active (dead) layer (0.16 μm thickness) at the p+ side top contact interface, where the photogenerated carriers do not contribute to the photocurrent, possibly due to recombination. One of the diodes, D1, was also characterized as detector for room temperature photon counting X-ray spectroscopy; the best energy resolution achieved (FWHM) at 5.9 keV was 745 eV. The noise analysis of the system, based on spectra obtained at different shaping times and applied reverse biases, showed that the dominant source of noise is the dielectric noise. It was also calculated that there was at least (165±24) eV charge trapping noise at 0 V.

  6. Improved charge collection of the buried p-i-n a-Si:H radiation detectors

    SciTech Connect

    Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Qureshi, S.; Street, R.A.; Xerox Palo Alto Research Center, CA )

    1989-09-01

    Charge collection in hydrogenated amorphous silicon (a-Si:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV {alpha} particles, the 5.7 {mu}m thick buried p-i-n detector with bias 300V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures. 17 refs., 7 figs.

  7. A final report for: Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

    SciTech Connect

    Vernon, Stanley M.

    1999-04-01

    This SBIR Phase I developed neutron detectors made from gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the front surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed from a layer of Al{sub x}Ga{sub 1-x}As. Schottky-barrier diodes formed from the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10{sup -12} amps at -1 V on a 3mm x 3mm diode, or a density of 1.1 x 10{sup -11} amps cm{sup -2}, with many of the diode structures tested having nearly similar results. The PIN diodes were significantly better than the Schottky barrier device, which had six orders of magnitude higher dark current. Diodes were characterized in terms of their current-mode response to 5.5 MeV alpha particles from 241-Americium. These radiation-induced currents were as high as 9.78 x 10{sup -7} A cm{sup -1} on a PIN device with an Al{sub x}Ga{sub 1-x}As BSF. Simple PIN diodes had currents as high as 2.44 x 10{sup -7} A cm{sup -2}, with thicker undoped layers showing better sensitivity. Boron coatings were applied, and response to neutrons tested at University of Michigan by Dr. Doug McGregor. Devices with PIN and Schottky barrier designs showed neutron detection efficiencies as high as 2% on 5 {micro}m thick devices, with no need for external bias voltages. PIN diodes showed higher breakdown voltages and lower noise

  8. The effect of embedded nanopillars on the built-in electric field of amorphous silicon p-i-n devices

    NASA Astrophysics Data System (ADS)

    Kirkpatrick, T.; Simmons, C. B.; Akey, A. J.; Tabet, N.; Buonassisi, T.

    2016-05-01

    In this work, we report on the experimental modification of the built-in electric field of a-Si:H p-i-n junctions, resulting from Ag nanopillars embedded within the intrinsic layer (i-layer). Increased open-circuit voltages, from J-V traces, and reduced charge transit-times, from time-of-flight (ToF) measurements, indicate that the built-in electric field within the i-layer is increased with respect to unstructured reference samples. Decreased short-circuit current density values coupled with competing diode J-V characteristics, however, indicate that the charge collection from the i-layer is significantly decreased for the nanopillar samples. Theoretical and functional analysis of the ToF data reaffirms both reduced charge-transit times and decreased charge collection, and is able to quantitatively confirm the enhanced built-in electric field of the nanopillar samples.

  9. Coplanar waveguide discontinuities for P-I-N diode switches and filter applications

    NASA Technical Reports Server (NTRS)

    Dib, N. I.; Katehi, P. B.; Ponchak, George E.; Simons, Rainee N.

    1990-01-01

    A full wave space domain integral equation (SDIE) analysis of coplanar waveguide (CPW) two port discontinuities is presented. An experimental setup to measure the S-parameters of such discontinuities is described. Experimental and theoretical results for CPW realizations of pass-band and stop-band filters are presented. The S-parameters of such structures are plotted in the frequency range 5 to 25 GHz.

  10. Density of states measurements in a p-i-n solar cell

    SciTech Connect

    Crandall, R.S.; Wang, Q.

    1996-05-01

    The authors describe results of density of states (DOS) profiling in p-i-n solar-cell devices using drive-level capacitance (DLC) techniques. Near the p-i interface the defect density is high, decreasing rapidly into the interior, reaching low values in the central region of the cell, and rising rapidly again at the n-i interface. They show that the states in the central region are neutral dangling-bond defects, whereas those near the interfaces with the doped layers are charged dangling bonds.

  11. GeSn p-i-n waveguide photodetectors on silicon substrates

    SciTech Connect

    Peng, Yu-Hsiang; Chang, Guo-En; Cheng, H. H.; Mashanov, Vladimir I.

    2014-12-08

    We report an investigation on GeSn p-i-n waveguide photodetectors grown on a Ge-buffered Si wafer. In comparison with a reference Ge detector, the GeSn detector shows an enhanced responsivity in the measured energy range, mainly attributed to the smaller bandgap caused by Sn-alloying. Analysis of the quantum efficiency indicates that increasing the Sn content in the active layers can significantly shorten the required device length to achieve the maximum efficiency. The present investigation demonstrates the planar photodetectors desired for monolithic integration with electronic devices.

  12. GeSn p-i-n photodetector for all telecommunication bands detection.

    PubMed

    Su, Shaojian; Cheng, Buwen; Xue, Chunlai; Wang, Wei; Cao, Quan; Xue, Haiyun; Hu, Weixuan; Zhang, Guangze; Zuo, Yuhua; Wang, Qiming

    2011-03-28

    Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/W, 0.23 A/W, and 0.12 A/W at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1 V reverse bias. With a broad detection spectrum (800-1800 nm) covering the whole telecommunication windows and compatibility with conventional complementary metal-oxide-semiconductors (CMOS) technology, the GeSn devices are attractive for applications in both optical communications and optical interconnects.

  13. Si Radial p-i-n Junction Photovoltaic Arrays with Built-In Light Concentrators.

    PubMed

    Yoo, Jinkyoung; Nguyen, Binh-Minh; Campbell, Ian H; Dayeh, Shadi A; Schuele, Paul; Evans, David; Picraux, S Tom

    2015-05-26

    High-performance photovoltaic (PV) devices require strong light absorption, low reflection and efficient photogenerated carrier collection for high quantum efficiency. Previous optical studies of vertical wires arrays have revealed that extremely efficient light absorption in the visible wavelengths is achievable. Photovoltaic studies have further advanced the wire approach by employing radial p-n junction architectures to achieve more efficient carrier collection. While radial p-n junction formation and optimized light absorption have independently been considered, PV efficiencies have further opportunities for enhancement by exploiting the radial p-n junction fabrication procedures to form arrays that simultaneously enhance both light absorption and carrier collection efficiency. Here we report a concept of morphology control to improve PV performance, light absorption and quantum efficiency of silicon radial p-i-n junction arrays. Surface energy minimization during vapor phase epitaxy is exploited to form match-head structures at the tips of the wires. The match-head structure acts as a built-in light concentrator and enhances optical absorptance and external quantum efficiencies by 30 to 40%, and PV efficiency under AM 1.5G illumination by 20% compared to cylindrical structures without match-heads. The design rules for these improvements with match-head arrays are systematically studied. This approach of process-enhanced control of three-dimensional Si morphologies provides a fab-compatible way to enhance the PV performance of Si radial p-n junction wire arrays. PMID:25961330

  14. Si Radial p-i-n Junction Photovoltaic Arrays with Built-In Light Concentrators.

    PubMed

    Yoo, Jinkyoung; Nguyen, Binh-Minh; Campbell, Ian H; Dayeh, Shadi A; Schuele, Paul; Evans, David; Picraux, S Tom

    2015-05-26

    High-performance photovoltaic (PV) devices require strong light absorption, low reflection and efficient photogenerated carrier collection for high quantum efficiency. Previous optical studies of vertical wires arrays have revealed that extremely efficient light absorption in the visible wavelengths is achievable. Photovoltaic studies have further advanced the wire approach by employing radial p-n junction architectures to achieve more efficient carrier collection. While radial p-n junction formation and optimized light absorption have independently been considered, PV efficiencies have further opportunities for enhancement by exploiting the radial p-n junction fabrication procedures to form arrays that simultaneously enhance both light absorption and carrier collection efficiency. Here we report a concept of morphology control to improve PV performance, light absorption and quantum efficiency of silicon radial p-i-n junction arrays. Surface energy minimization during vapor phase epitaxy is exploited to form match-head structures at the tips of the wires. The match-head structure acts as a built-in light concentrator and enhances optical absorptance and external quantum efficiencies by 30 to 40%, and PV efficiency under AM 1.5G illumination by 20% compared to cylindrical structures without match-heads. The design rules for these improvements with match-head arrays are systematically studied. This approach of process-enhanced control of three-dimensional Si morphologies provides a fab-compatible way to enhance the PV performance of Si radial p-n junction wire arrays.

  15. Dense nanoimprinted silicon nanowire arrays with passivated axial p-i-n junctions for photovoltaic applications

    SciTech Connect

    Zhang, Peng; Liu, Pei; Siontas, Stylianos; Zaslavsky, A.; Pacifici, D.; Ha, Jong-Yoon; Krylyuk, S.; Davydov, A. V.

    2015-03-28

    We report on the fabrication and photovoltaic characteristics of vertical arrays of silicon axial p-i-n junction nanowire (NW) solar cells grown by vapor-liquid-solid (VLS) epitaxy. NW surface passivation with silicon dioxide shell is shown to enhance carrier recombination time, open-circuit voltage (V{sub OC}), short-circuit current density (J{sub SC}), and fill factor (FF). The photovoltaic performance of passivated individual NW and NW arrays was compared under 532 nm laser illumination with power density of ∼10 W/cm{sup 2}. Higher values of V{sub OC} and FF in the NW arrays are explained by enhanced light trapping. In order to verify the effect of NW density on light absorption and hence on the photovoltaic performance of NW arrays, dense Si NW arrays were fabricated using nanoimprint lithography to periodically arrange the gold seed particles prior to epitaxial growth. Compared to sparse NW arrays fabricated using VLS growth from randomly distributed gold seeds, the nanoimprinted NW array solar cells show a greatly increased peak external quantum efficiency of ∼8% and internal quantum efficiency of ∼90% in the visible spectral range. Three-dimensional finite-difference time-domain simulations of Si NW periodic arrays with varying pitch (P) confirm the importance of high NW density. Specifically, due to diffractive scattering and light trapping, absorption efficiency close to 100% in the 400–650 nm spectral range is calculated for a Si NW array with P = 250 nm, significantly outperforming a blanket Si film of the same thickness.

  16. Silicon nanowire arrays with passivated axial p-i-n junctions for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Zhang, Peng; Liu, Pei; Zaslavsky, Alexander; Pacifici, Domenico; Ha, Jong-Yoon; Krylyuk, Sergiy; Davydov, Albert

    2014-03-01

    Metal catalyst-assisted vapor-liquid-solid mechanism can be used to grow large areas of nanowires (NWs) with compositional and doping control in either axial or core-shell geometries. Here, we report on vertical arrays of Si axial p- i- n oxide-passivated NWs that were 12 microns long with a 4 micron intrinsic section. The NW arrays were planarized using SU-8 photoresist, followed by reactive ion etching to expose the NW tips. Top n-contact was realized by sputter deposition of a 200 nm IZO layer. The p-contact was made by backside metallization of the p-Si substrate. Under AM 1.5 illumination, unpassivated NW arrays exhibited an open-circuit voltage, VOC of 170 mV, a short-circuit current density JSC >3.7 mA/cm2 (with uncertainty due to the unknown fraction of properly contacted NWs), and a fill factor of 28.9%. After the passivation, VOC, JSC and FF increased to 250 mV, >9.2 mA/cm2 and 35.7%, respectively. The measured normal reflectance was around 6% over the 400-1000 nm spectral range, whereas the diffuse reflectance was around 20% over the same range, indicating strong light scattering and absorption by the NWs. The photovoltaic performance of passivated single NWs and NW arrays were compared using a 532 nm laser with a power density of about 10 W/cm2. Higher values of VOC and FF obtained for the latter are explained by light trapping in the NW arrays.

  17. Design and Characterization of p-i-n Devices for Betavoltaic Microbatteries on Gallium Nitride

    NASA Astrophysics Data System (ADS)

    Khan, Muhammad Raziuddin A.

    Betavoltaic microbatteries convert nuclear energy released as beta particles directly into electrical energy. These batteries are well suited for electrical applications such as micro-electro-mechanical systems (MEMS), implantable medical devices and sensors. Such devices are often located in hard to access places where long life, micro-size and lightweight are required. The working principle of a betavoltaic device is similar to a photovoltaic device; they differ only in that the electron hole pairs (EHPs) are generated in the device by electrons instead of photons. In this study, the performance of a betavoltaic device fabricated from gallium nitride (GaN) is investigated for beta particle energies equivalent to Tritium (3H) and Nickel-63 (N63) beta sources. GaN is an attractive choice for fabricating betavoltaic devices due to its wide band gap and radiation resistance. Another advantage GaN has is that it can be alloyed with aluminum (Al) to further increase the bandgap, resulting in a higher output power and increased efficiency. Betavoltaic devices were fabricated on p-i-n GaN structures grown by metalorganic chemical vapor deposition (MOCVD). The devices were characterized using current - voltage (IV) measurements without illumination (light or beta), using a laser driven light source, and under an electron beam. Dark IV measurements showed a turn on-voltage of ~ 3.4 V, specific-on-resistance of 15.1 m O-cm2, and a leakage current of 0.5 mA at -- 10 V. A clear photo-response was observed when IV curves were measured for these devices under a light source at a wavelength of 310 nm (4.0 eV). These devices were tested under an electron beam in order to evaluate their behavior as betavoltaic microbatteries without using radioactive materials. Output power of 70 nW and 640 nW with overall efficiencies of 1.2% and 4.0% were determined at the average energy emission of 3H (5.6 keV) and 63N (17 keV) respectively.

  18. Superlinear generation of exciton and related paramagnetism induced by forward current in a diamond p-i-n junction

    SciTech Connect

    Natori, Kenji

    2015-02-07

    The concentration of excitons generated in a high-quality diamond p-i-n junction is investigated considering the forward current characteristics of the junction. As the forward current in the junction increases, the exciton concentration increases superlinearly, contrary to the linear increases of the electron and hole concentration. This tendency suggests a superlinear increase in emission intensity due to exciton recombination. The increase rate is more radical than quadratic, in accordance with the observed increase of the integrated intensity of free exciton emission. To estimate the concentration of triplet excitons generated in the p-i-n junction, observation of the paramagnetism due to the exciton spin moment is proposed. The magnetic susceptibility superlinearly increases with the increase in the forward current, unlike any other magnetic property of the device.

  19. Broadband and high-speed silicon dual-ring modulator based on p-i-n-i-p junction

    NASA Astrophysics Data System (ADS)

    Haq, Bahawal; Rasras, Mahmoud

    2016-05-01

    We propose a silicon dual-ring modulator consisting of two serially cascaded rings embedded with p-i-n-i-p junctions driven by one signal, in contrast to a differential signal pair. The simulations for optimizing the design of the phase shifter and the optical response of the both rings are performed. We show that the device performs better than the single ring. The modulator has a higher optical bandwidth, 3-dB modulation bandwidth and bit rate as compared to a single ring. In contrast to a cascaded ring modulator driven by a differential signal pair, it can be driven by a single p-i-n-i-p junction and RF signal. A serially coupled ring resonator has three times the resonance linewidth as compared to a single ring. Furthermore, it can support significantly higher data rates of up to 13 GHz.

  20. Large lateral photovoltaic effect in µc-SiOx:H/a-Si:H/c-Si p-i-n structure

    NASA Astrophysics Data System (ADS)

    Qiao, Shuang; Chen, Jianhui; Liu, Jihong; Zhang, Xinhui; Wang, Shufang; Fu, Guangsheng

    2016-03-01

    In this paper, we report on a large lateral photovoltaic effect (LPE) in a hydrogenated microcrystal silicon-oxygen (µc-SiOx:H)-based p-i-n structure. Compared with LPE in a hydrogenated amorphous silicon (a-Si:H)-based p-i-n structure, this structure showed an abnormal current-voltage (I-V) curve with a lower photoelectric conversion efficiency, but exhibited a much higher LPE with the highest position sensitivity of 64.3 mV/mm. We ascribe this to the enhancement of the lateral gradient of excess transmitted carriers induced by increasing both Schottky barrier and p-type layer body conductivity. Our results suggest that this µc-SiOx:H-based p-i-n structure may be a promising candidate for position-sensitive detectors (PSDs). Moreover, our results may also imply that solar cell devices with abnormal I-V curves (or low efficiency) could find their new applications in other aspects.

  1. Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor

    PubMed Central

    de Cesare, Giampiero; Nascetti, Augusto; Caputo, Domenico

    2015-01-01

    In this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction. The device is first characterized as radiation and temperature sensor independently. We found a maximum value of responsivity equal to 350 mA/W at 510 nm and temperature sensitivity equal to 3.2 mV/K. We then investigated the effects of the temperature variation on light intensity measurement and of the light intensity variation on the accuracy of the temperature measurement. We found that the temperature variation induces an error lower than 0.55 pW/K in the light intensity measurement at 550 nm when the diode is biased in short circuit condition, while an error below 1 K/µW results in the temperature measurement when a forward bias current higher than 25 µA/cm2 is applied. PMID:26016913

  2. Specific features of light current-voltage characteristics of p-i-n structures based on amorphous silicon in the case of the tunnel-drift mechanism of dark current transport

    SciTech Connect

    Andreev, A. A.

    2008-11-15

    Current-voltage (I-V) characteristics of p-i-n structures based on amorphous silicon ({alpha}-Si:H) with small hole diffusion lengths (shorter than the thickness of the i-layer of a p-i-n structure) have been experimentally studied with and without illumination. It is shown that forward I-V characteristics of structures of this kind can be described by a dependence inherent in diodes, with a diode ideality factor two-three times the maximum value of 2, theoretically predicted for generation-recombination currents in p-n junctions. The dark current is always substantially lower than the photocurrent in a cell biased with a voltage approximately equal to the opencircuit voltage of the photocell. Dark currents cannot contribute to the I-V characteristic under illumination. The photocurrent decreases with increasing photovoltage at a bias lower than the open-circuit voltage because of a decrease in the collection coefficient and the increasingly important role of back diffusion of electrons into the p-contact, rather than as a result of the dark injection. In the case of biases exceeding the open-circuit voltage, back diffusion becomes the predominant component of the current.

  3. Quantum efficiencies greater than unity: A computer study of a photogating effect in amorphous silicon p-i-n devices

    NASA Astrophysics Data System (ADS)

    Hou, J. Y.; Fonash, S. J.

    1992-07-01

    We report a new effect, which we call photogating, that can be present in amorphous Si-based p-i-n structures under certain illumination conditions. This phenomenon feeds photogenerated carriers created by a bias light beam of one wavelength into the current response to a second probe light beam of a different wavelength. We demonstrate that this phenomena can lead to measured quantum efficiencies greater than unity. Our computer simulations show that this new effect owes its origins to trapped charge and to the condition that there is a low field region in the front of the structure in the presence of certain bias light.

  4. Simulation for spectral response of solar-blind AlGaN based p-i-n photodiodes

    NASA Astrophysics Data System (ADS)

    Xue, Shiwei; Xu, Jintong; Li, Xiangyang

    2015-04-01

    In this article, we introduced how to build a physical model of refer to the device structure and parameters. Simulations for solar-blind AlGaN based p-i-n photodiodes spectral characteristics were conducted in use of Silvaco TCAD, where device structure and parameters are comprehensively considered. In simulation, the effects of polarization, Urbach tail, mobility, saturated velocities and lifetime in AlGaN device was considered. Especially, we focused on how the concentration-dependent Shockley-Read-Hall (SRH) recombination model affects simulation results. By simulating, we analyzed the effects in spectral response caused by TAUN0 and TAUP0, and got the values of TAUN0 and TAUP0 which can bring a result coincides with test results. After that, we changed their values and made the simulation results especially the part under 255 nm performed better. In conclusion, the spectral response between 200 nm and 320 nm of solar-blind AlGaN based p-i-n photodiodes were simulated and compared with test results. We also found that TAUN0 and TAUP0 have a large impact on spectral response of AlGaN material.

  5. Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers

    PubMed Central

    2014-01-01

    Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC multilayers prepared in a plasma-enhanced chemical vapor deposition system. The thickness of amorphous Si layer was designed to be 4 nm, and the thickness of amorphous SiC layer was kept at 2 nm. Transmission electron microscopy observation revealed the formation of Si QDs after 900°C annealing. The optical properties of the Si QDs/SiC multilayers were studied, and the optical band gap deduced from the optical absorption coefficient result is 1.48 eV. Moreover, the p-i-n structure with n-a-Si/i-(Si QDs/SiC multilayers)/p-Si was fabricated, and the carrier transportation mechanism was investigated. The p-i-n structure was used in a solar cell device. The cell had the open circuit voltage of 532 mV and the power conversion efficiency (PCE) of 6.28%. PACS 81.07.Ta; 78.67.Pt; 88.40.jj PMID:25489285

  6. Hump-shaped internal collection efficiency of degraded a-Si:H {ital p-i-n} solar cells

    SciTech Connect

    Smole, F.; Topic, M.; Furlan, J.; Kusian, W.

    1997-07-01

    Measured internal collection efficiency (ICE) characteristics of annealed and degraded a-Si:H p-i-n solar cells were used for an analysis of their internal behavior. Using the numerical simulator ASPIN, simulations were performed in order to fit and explain pronounced hump-shaped voltage-dependent ICE characteristics of degraded structures under weak short-wavelength illumination. Agreement with measured ICE characteristics for a degraded cell was obtained only if in addition to the introduction of light-induced dangling bond defect states, their capture cross sections were also increased, in particular the capture cross section for the charged defect states were increased. This caused a change in the occupancy of defect states at the p-i interface and front part of the i layer under forward biases. Consequently, the electric field in the front part of the cell was sustained under higher forward biases, resulting in recovery of the ICE. {copyright} {ital 1997 American Institute of Physics.}

  7. Effect of high dose γ-ray irradiation on GaAs p-i-n photodetectors

    NASA Astrophysics Data System (ADS)

    Dixit, V. K.; Khamari, Shailesh K.; Manwani, Sapna; Porwal, S.; Alexander, K.; Sharma, T. K.; Kher, S.; Oak, S. M.

    2015-06-01

    Metal organic vapor phase epitaxy grown GaAs p-i-n photodetector devices are fabricated and tested for the assessment of practical usage of the detector after the exposure to high radiation doses of γ-ray. Increased values of saturation current, ideality factor and leakage current after 360 kGy γ-ray irradiation confirm a substantial increase in the number of generation-recombination centers. It is further observed that the leakage current density, current per unit volume (Jv), increases linearly with the radiation fluence (Φ). The slope (α=ΔJv/ΔΦ) of the leakage current density versus γ-ray radiation fluences curve is two order less (4-5×10-l9 A/cm) for GaAs compared to Si (4-6×10-l7 A/cm). The lower value of α (radiation damage constant) confirms that GaAs is radiation harder than Si. Subsequently, it is also observed that the photo response of 360 kGy γ-ray irradiated GaAs device is reduced by ~50% due to the reduction of quantum efficiency by the radiation induced generation-recombination centers. The functionality of the irradiated sensor is verified by comparing the response of the pristine and irradiated detectors to the photoluminescence of semiconductor quantum well structures.

  8. Single-crystal p-i-n-Si thin-film solar cells grown on Si substrate by sputter epitaxy

    NASA Astrophysics Data System (ADS)

    Yeh, Wenchang; Tatebe, Kyohei

    2015-08-01

    An intrinsic sputter-epitaxial (SE) Si film with a thickness of 1000 nm and a 50-nm-thick n+ SE-Si film were successfully grown as the light-absorbing layer and emitter layer, respectively, on a heavily doped p-Si(100) wafer to form the p-i-n junction of a solar cell (SC). Heavily doped n+ SE-Si with an electron concentration n of 3 × 1020 cm-3 was grown by cosputtering of Sb with Si. The characteristics of SE-Si grown at 310 °C was investigated in relation to annealing temperature. The oxygen concentration in SE-Si was ˜1018 cm-3, which was found to originate from the gas released in the chamber. Oxygen-induced thermal donors then became the source of n in the film, and n was reduced to 1 × 1016 cm-3 after forming-gas annealing at 700 °C because the thermal donors were neutralized by hydrogen. The SC exhibited a maximum internal quantum efficiency of 73.7%.

  9. p-i-n heterojunctions with BiFeO3 perovskite nanoparticles and p- and n-type oxides: photovoltaic properties.

    PubMed

    Chatterjee, Soumyo; Bera, Abhijit; Pal, Amlan J

    2014-11-26

    We formed p-i-n heterojunctions based on a thin film of BiFeO3 nanoparticles. The perovskite acting as an intrinsic semiconductor was sandwiched between a p-type and an n-type oxide semiconductor as hole- and electron-collecting layer, respectively, making the heterojunction act as an all-inorganic oxide p-i-n device. We have characterized the perovskite and carrier collecting materials, such as NiO and MoO3 nanoparticles as p-type materials and ZnO nanoparticles as the n-type material, with scanning tunneling spectroscopy; from the spectrum of the density of states, we could locate the band edges to infer the nature of the active semiconductor materials. The energy level diagram of p-i-n heterojunctions showed that type-II band alignment formed at the p-i and i-n interfaces, favoring carrier separation at both of them. We have compared the photovoltaic properties of the perovskite in p-i-n heterojunctions and also in p-i and i-n junctions. From current-voltage characteristics and impedance spectroscopy, we have observed that two depletion regions were formed at the p-i and i-n interfaces of a p-i-n heterojunction. The two depletion regions operative at p-i-n heterojunctions have yielded better photovoltaic properties as compared to devices having one depletion region in the p-i or the i-n junction. The results evidenced photovoltaic devices based on all-inorganic oxide, nontoxic, and perovskite materials.

  10. Visualization and analysis of active dopant distribution in a p-i-n structured amorphous silicon solar cell using scanning nonlinear dielectric microscopy

    NASA Astrophysics Data System (ADS)

    Hirose, K.; Chinone, N.; Cho, Y.

    2015-09-01

    Scanning nonlinear dielectric microscopy (SNDM) and super-higher-order (SHO-) SNDM were used for dopant profiling analysis of a cross-section of the p-i-n structure of an amorphous silicon solar cell. The p-i-n and zigzag structures of each layer boundary were visualized as carrier polarity and density images on 10-20 nm scale through a SNDM measurement. A capacitance-voltage curve was obtained at each pixel in the scan area through a SHO-SNDM measurement. The obtained SNDM and SHO-SNDM data suggest that the i-layer was not completely intrinsic, but was very-low-density p-type.

  11. Design Issues of GaAs and AlGaAs Delta-Doped p-i-n Quantum-Well APD's

    NASA Technical Reports Server (NTRS)

    Wang, Yang

    1994-01-01

    We examine the basic design issues in the optimization of GaAs delta-doped and AlGAs delta-doped quantum-well avalanche photodiode (APD) structures using a theoretical analysis based on an ensemble Monte Carlo simulation. The devices are variations of the p-i-n doped quantum-well structure previously described in the literature. They have the same low-noise, high-gain and high-bandwidth features as the p-i-n doped quantum-well device. However, the use of delta doping provides far greater control or the doping concentrations within each stage possibly enhancing the extent to which the device can be depleted. As a result, it is expected that the proposed devices will operate at higher gain levels (at very low noise) than devices previously developed.

  12. Channelized coplanar waveguide pin-diode switches

    NASA Technical Reports Server (NTRS)

    Ponchak, G. E.; Simons, R. N.

    1989-01-01

    Three different types of p-i-n diode, reflective CPW switches are presented. The first two switches are the series and the shunt mounted diode switches. Each has achieved greater than 15 dB of isolation over a broad bandwidth. The third switch is a narrow band, high isolation switched filter which has achieved 19 dB of isolation. Equivalent circuits and measured performance for each switch is presented.

  13. Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells

    NASA Astrophysics Data System (ADS)

    Sellers, D. G.; Chen, E. Y.; Polly, S. J.; Hubbard, S. M.; Doty, M. F.

    2016-05-01

    We investigate the effect of doping on the mechanisms of carrier escape from intermediate states in delta-doped InAs/GaAs intermediate band solar cells. The intermediate states arise from InAs quantum dots embedded in a GaAs p-i-n junction cell. We find that doping the sample increases the number of excited-state carriers participating in a cycle of trapping and carrier escape via thermal, optical, and tunneling mechanisms. However, we find that the efficiency of the optically-driven carrier escape mechanism is independent of doping and remains small.

  14. Metamorphic In(0.20)Ga(0.80)As p-i-n photodetectors grown on GaAs substrates for near infrared applications.

    PubMed

    Swaminathan, K; Yang, L-M; Grassman, T J; Tabares, G; Guzman, A; Hierro, A; Mills, M J; Ringel, S A

    2011-04-11

    The growth and performance of top-illuminated metamorphic In(0.20)Ga(0.80)As p-i-n photodetectors grown on GaAs substrates using a step-graded In(x)Ga(1-x)As buffer is reported. The p-i-n photodetectors display a low room-temperature reverse bias dark current density of ~1.4×10(-7) A/cm(2) at -2 V. Responsivity and specific detectivity values of 0.72 A/W, 2.3×10(12) cm·Hz(1/2)/W and 0.69 A/W, 2.2×10(12) cm·Hz(1/2)/W are achieved for Yb:YAG (1030 nm) and Nd:YAG (1064 nm) laser wavelengths at -2 V, respectively. A high theoretical bandwidth-responsivity product of 0.21 GHz·A/W was estimated at 1064 nm. Device performance metrics for these GaAs substrate-based detectors compare favorably with those based on InP technology due to the close tuning of the detector bandgap to the target wavelengths, despite the presence of a residual threading dislocation density. This work demonstrates the great potential for high performance metamorphic near-infrared InGaAs detectors with optimally tuned bandgaps, which can be grown on GaAs substrates, for a wide variety of applications.

  15. Developing Seedless Growth of ZnO Micro/Nanowire Arrays towards ZnO/FeS2/CuI P-I-N Photodiode Application

    PubMed Central

    Yang, Zhi; Wang, Minqiang; Shukla, Sudhanshu; Zhu, Yue; Deng, Jianping; Ge, Hu; Wang, Xingzhi; Xiong, Qihua

    2015-01-01

    A seedless hydrothermal method is developed to grow high density and vertically aligned ZnO micro/nanowire arrays with low defect density on metal films under the saturated nutrition solution. In particular, the mechanism of seedless method is discussed here. A buffer layer can be confirmed by transmission electron microscopy (TEM), which may release the elastic strain between ZnO and substrate to achieve this highly mismatched heteroepitaxial structures. Based on ZnO micro/nanowire arrays with excellent wettability surface, we prepared ZnO-FeS2-CuI p-i-n photodiode by all-solution processed method with the high rectifying ratio of 197 at ±1 V. Under AM 1.5 condition, the Jsc of 0.5 mA/cm2, on-off current ratio of 371 and fast photoresponse at zero bias voltage were obtained. This good performance comes from excellent collection ability of photogenerated electrons and holes due to the increased depletion layer width for p-i-n structure. Finally, the high responsivity around 900 nm shows the potential as near infrared photodetectors applications. PMID:26077658

  16. Characterisation of Al0.52In0.48P mesa p-i-n photodiodes for X-ray photon counting spectroscopy

    NASA Astrophysics Data System (ADS)

    Butera, S.; Lioliou, G.; Krysa, A. B.; Barnett, A. M.

    2016-07-01

    Results characterising the performance of thin (2 μm i-layer) Al0.52In0.48P p+-i-n+ mesa photodiodes for X-ray photon counting spectroscopy are reported at room temperature. Two 200 μm diameter and two 400 μm diameter Al0.52In0.48P p+-i-n+ mesa photodiodes were studied. Dark current results as a function of applied reverse bias are shown; dark current densities <3 nA/cm2 were observed at 30 V (150 kV/cm) for all the devices analysed. Capacitance measurements as a function of applied reverse bias are also reported. X-ray spectra were collected using 10 μs shaping time, with the device illuminated by an 55Fe radioisotope X-ray source. Experimental results showed that the best energy resolution (FWHM) achieved at 5.9 keV was 930 eV for the 200 μm Al0.52In0.48P diameter devices, when reverse biased at 15 V. System noise analysis was also carried out, and the different noise contributions were computed.

  17. Developing Seedless Growth of ZnO Micro/Nanowire Arrays towards ZnO/FeS2/CuI P-I-N Photodiode Application

    NASA Astrophysics Data System (ADS)

    Yang, Zhi; Wang, Minqiang; Shukla, Sudhanshu; Zhu, Yue; Deng, Jianping; Ge, Hu; Wang, Xingzhi; Xiong, Qihua

    2015-06-01

    A seedless hydrothermal method is developed to grow high density and vertically aligned ZnO micro/nanowire arrays with low defect density on metal films under the saturated nutrition solution. In particular, the mechanism of seedless method is discussed here. A buffer layer can be confirmed by transmission electron microscopy (TEM), which may release the elastic strain between ZnO and substrate to achieve this highly mismatched heteroepitaxial structures. Based on ZnO micro/nanowire arrays with excellent wettability surface, we prepared ZnO-FeS2-CuI p-i-n photodiode by all-solution processed method with the high rectifying ratio of 197 at ±1 V. Under AM 1.5 condition, the Jsc of 0.5 mA/cm2, on-off current ratio of 371 and fast photoresponse at zero bias voltage were obtained. This good performance comes from excellent collection ability of photogenerated electrons and holes due to the increased depletion layer width for p-i-n structure. Finally, the high responsivity around 900 nm shows the potential as near infrared photodetectors applications.

  18. Measurement of the transmission magnetic circular dichroism of Ga1-xMnxAs epilayers using a built-in p-i-n photodiode

    NASA Astrophysics Data System (ADS)

    He, Z. X.; Zheng, H. Z.; Wang, H. L.; Zhao, J. H.

    2014-02-01

    By constructing a GaMnAs epilayer/semi-insulating In0.2Ga0.8As/(001) n+-GaAs substrate layer structure as a built-in p-i-n photodiode, we developed a scheme for on-chip measurements of transmission magnetic circular dichroism (T-MCD). Both the hysteresis loops in the magnetic field sweeps and the wavelength scans at saturated magnetic fields measured using the new T-MCD scheme, illustrated the same features as those previously measured on the freestanding GaMnAs thin films by conventional T-MCD. Because a large group of epitaxially grown magnetic film/semiconductor heterostructures, such as Fe, NiFe, CoFeAl, and MnGa films on semiconductor substrates, are becoming important new building blocks for semiconductor-based spin field-effect transistor, perpendicular magnetic tunnel junction (p-MTJ) and lateral MTJ devices, the new T-MCD scheme can be applied to tests of their magnetic properties by forming either p-i-n or Schottky photodiodes.

  19. Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365-500 nm spectral range

    NASA Astrophysics Data System (ADS)

    Berkman, E. A.; El-Masry, N. A.; Emara, A.; Bedair, S. M.

    2008-03-01

    We report on nearly lattice-matched grown InGaN based p-i-n photodiodes detecting in the 365-500nm range with tunable peak responsivity tailored by the i-layer properties. The growth of lattice matched i- and n-InGaN layer leads to improvement in the device performance. This approach produced photodiodes with zero-bias responsivities up to 0.037A /W at 426nm, corresponding to 15.5% internal quantum efficiency. The peak responsivity wavelength ranged between 416 and 466nm, the longest reported for III-N photodiodes. The effects of InN content and i-layer thickness on photodiode properties and performance are discussed.

  20. AlGaAs/GaAs p-i-n photodiode/preamplifier monolithic photoreceiver integrated on a semi-insulating GaAs substrate

    NASA Astrophysics Data System (ADS)

    Wada, O.; Hamaguchi, H.; Miura, S.; Makiuchi, M.; Nakai, K.; Horimatsu, H.; Sakurai, T.

    1985-05-01

    A fully monolithic photoreceiver circuit incorporating an AlGaAs/GaAs p-i-n photodiode and a GaAs field-effect transistor based transimpedance amplifier has been fabricated in the form of a horizontally integrated structure on a semi-insulating GaAs substrate. Parasitic capacitances of the circuit elements have been minimized in the present monolithic circuit, and a short rise and fall time of 1.0 ns, corresponding to an approximate -3 dB frequency of 300 MHz, has been demonstrated at the internal feedback resistance of 1.3 kΩ. Preliminary measurement of the noise characteristics of the present circuit has exhibited an encouraging value of the equivalent input noise current of 13 pA Hz-1/2 at 300 MHz.

  1. Impact of field-enhanced band-traps-band tunneling on the dark current generation in germanium p-i-n photodetector

    NASA Astrophysics Data System (ADS)

    Ang, Kah-Wee; Ng, Joseph Weisheng; Lo, Guo-Qiang; Kwong, Dim-Lee

    2009-06-01

    This letter investigates the impact of field-enhanced band-traps-band tunneling on the dark current generation in germanium (Ge) p-i-n photodetector. We show that the existence of defect-induced traps within the forbidden gap forms the underlying leakage mechanism. Enhancing the electric field intensity is found to reduce the activation energy that governs the leakage generation rates. In the presence of enlarged band-bending, the dark current generation is further aggravated by the enhancement in electrons and holes tunneling from the resulting deep levels into the conduction and valence bands, respectively. Such field-enhanced band tunneling effect becomes increasingly prominent with a downsizing of the detector's depletion width, which imposes a design trade-off between leakage generation and bandwidth enhancement.

  2. Large Perovskite Grain Growth in Low-Temperature Solution-Processed Planar p-i-n Solar Cells by Sodium Addition.

    PubMed

    Bag, Santanu; Durstock, Michael F

    2016-03-01

    Thin-film p-i-n type planar heterojunction perovskite solar cells have the advantage of full low temperature solution processability and can, therefore, be adopted in roll-to-roll production and flexible devices. One of the main challenges with these devices, however, is the ability to finely control the film morphology during the deposition and crystallization of the perovskite layer. Processes suitable for optimization of the perovskite layer film morphology with large grains are highly desirable for reduced recombination of charge carriers. Here, we show how uniform thin films with micron size perovskite grains can be made through the use of a controlled amount of sodium ions in the precursor solution. Large micrometer-size CH3NH3PbI3 perovskite grains are formed during low-temperature thin-film growth by adding sodium ions to the PbI2 precursor solution in a two-step interdiffusion process. By adjusting additive concentration, film morphologies were optimized and the fabricated p-i-n planar perovskite-PCBM solar cells showed improved power conversion efficiences (an average of 3-4% absolute efficiency enhancement) compared to the nonsodium based devices. Overall, the additive enhanced grain growth process helped to reach a high 14.2% solar cell device efficiency with low hysteresis. This method of grain growth is quite general and provides a facile way to fabricate large-grained CH3NH3PbI3 on any arbitrary surface by an all solution-processed route.

  3. Large Perovskite Grain Growth in Low-Temperature Solution-Processed Planar p-i-n Solar Cells by Sodium Addition.

    PubMed

    Bag, Santanu; Durstock, Michael F

    2016-03-01

    Thin-film p-i-n type planar heterojunction perovskite solar cells have the advantage of full low temperature solution processability and can, therefore, be adopted in roll-to-roll production and flexible devices. One of the main challenges with these devices, however, is the ability to finely control the film morphology during the deposition and crystallization of the perovskite layer. Processes suitable for optimization of the perovskite layer film morphology with large grains are highly desirable for reduced recombination of charge carriers. Here, we show how uniform thin films with micron size perovskite grains can be made through the use of a controlled amount of sodium ions in the precursor solution. Large micrometer-size CH3NH3PbI3 perovskite grains are formed during low-temperature thin-film growth by adding sodium ions to the PbI2 precursor solution in a two-step interdiffusion process. By adjusting additive concentration, film morphologies were optimized and the fabricated p-i-n planar perovskite-PCBM solar cells showed improved power conversion efficiences (an average of 3-4% absolute efficiency enhancement) compared to the nonsodium based devices. Overall, the additive enhanced grain growth process helped to reach a high 14.2% solar cell device efficiency with low hysteresis. This method of grain growth is quite general and provides a facile way to fabricate large-grained CH3NH3PbI3 on any arbitrary surface by an all solution-processed route. PMID:26862869

  4. Dependence on the incident light power of the internal electric fields in a GaAs p-i-n solar cell according to bright photoreflectance spectroscopy

    NASA Astrophysics Data System (ADS)

    Jo, Hyun-Jun; Mun, Young Hee; Kim, Jong Su; Lee, Sang Jun

    2016-07-01

    Bright photoreflectance (BPR) spectroscopy at room temperature is used to examine the internal electric fields in a GaAs p-i-n solar cell for their dependence on the incident light power. Electric fields are observed at 30 µW and 100 µW of incident light. With increasing power, the strengths of the two electric fields are reduced due to the photovoltage effect. The electric field observed at 30 µW is assigned to the p-i interface, which is close to the surface. The other electric field is due to the i-n interface because the incident light penetrates deeper as the light power is increased. The electric field strength of 35.6 kV/cm at the p-i interface is lower than that of 42.9 kV/cm at the i-n interface at 500 µW of light power because the photovoltage effect is proportional to the number of photo-generated carriers, which is reduced as the distance from the surface increases. When the incident light power is similar to the excitation beam power, the electric fields at the p-i interface are saturated.

  5. High performance planar p-i-n perovskite solar cells with crown-ether functionalized fullerene and LiF as double cathode buffer layers

    SciTech Connect

    Liu, Xiaodong; Zhou, Yi E-mail: songbo@suda.edu.cn Song, Bo E-mail: songbo@suda.edu.cn; Lei, Ming; Li, Yongfang E-mail: songbo@suda.edu.cn

    2015-08-10

    Double cathode buffer layers (CBLs) composed of fullerene derivative functionalized with a crown-ether end group in its side chain (denoted as PCBC) and a LiF layer were introduced between the PCBM acceptor layer and the top cathode in planar p-i-n perovskite solar cells (pero-SCs) based on CH{sub 3}NH{sub 3}PbI{sub 3−X}Cl{sub X}. The devices with the PCBC/LiF double CBLs showed significant improvements in power conversion efficiency (PCE) and long-term stability when compared to the device with LiF single CBL. Through optimizing the spin-coating speed of PCBC, a maximum PCE of 15.53% has been achieved, which is approximately 15% higher than that of the device with single LiF CBL. The remarkable improvement in PCE can be attributed to the formation of a better ohmic contact in the CBL between PCBC and LiF/Al electrode arising from the dipole moment of PCBC, leading to the enhanced fill factor and short-circuit current density (J{sub sc}). Besides the PCE, the long-term stability of the devices with PCBC interlayer is also superior to that of the device with LiF single CBL, which is due to the more effective protection for the perovskite/PCBM interface.

  6. Numerical simulation of the effect of the free carrier motilities on light-soaked a-Si:H p-i-n solar cell

    NASA Astrophysics Data System (ADS)

    Ayat, L.; Bouhdjar, A. F.; Meftah, AF.; Sengouga, N.

    2015-07-01

    Using a previous model, which was developed to describe the light-induced creation of the defect density in the a-Si:H gap states, we present in this work a computer simulation of the a-Si:H p-i-n solar cell behavior under continuous illumination. We have considered the simple case of a monochromatic light beam nonuniformly absorbed. As a consequence of this light-absorption profile, the increase of the dangling bond density is assumed to be inhomogeneous over the intrinsic layer (i-layer). We investigate the internal variable profiles during illumination to understand in more detail the changes resulting from the light-induced degradation effect. Changes in the cell external parameters including the open circuit voltage, Voc, the short circuit current density, Jsc, the fill factor, FF, and the maximum power density, Pmax, are also presented. This shows, in addition, the free carrier mobility influence. The obtained results show that Voc seems to be the less affected parameter by the light-induced increase of the dangling bond density. Moreover, its degradation is very weak-sensitive to the free carrier mobility. Finally, the free hole mobility effect is found to be more important than that of electrons in the improvement of the solar cell performance.

  7. Solar-blind Al x Ga1- x N ( x > 0.45) p- i- n photodiodes with a polarization- p-doped emitter

    NASA Astrophysics Data System (ADS)

    Kuznetsova, N. V.; Nechaev, D. V.; Shmidt, N. M.; Karpov, S. Yu.; Rzheutskii, N. V.; Zemlyakov, V. E.; Kaibyshev, V. Kh.; Kazantsev, D. Yu.; Troshkov, S. I.; Egorkin, V. I.; Ber, B. Ya.; Lutsenko, E. V.; Ivanov, S. V.; Jmerik, V. N.

    2016-06-01

    Polarization-induced p-type doping of AlGaN layers with high aluminum content during plasmaassisted MBE growth has been studied. It is shown that a gradient of the AlN molar fraction in AlGaN (composition gradient) on a level of 0.005 nm-1 must be set in order to obtain a hole concentration of ~1018 cm-3 (measured by the C- V method) in Al x Ga1- x N:Mg ( x = 0.52-0.32) layers with dopant concentration [Mg] = 1.3 × 1018 cm-3. p- i- n photodiodes based on AlGaN heterostructures with such layers as p-emitters showed maximum photoresponsitivity in the solar-blind wavelength range (λ = 281 nm) about 35 and 48 mA/W at reverse bias voltage U = 0 and-5 V, respectively, and exhibited a dark current density of 3.9 × 10-8 A/cm2 at U =-5 V.

  8. Correlation between SiH2/SiH and light-induced degradation of p-i-n hydrogenated amorphous silicon solar cells

    NASA Astrophysics Data System (ADS)

    Keya, Kimitaka; Kojima, Takashi; Torigoe, Yoshihiro; Toko, Susumu; Yamashita, Daisuke; Seo, Hyunwoong; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu

    2016-07-01

    We have measured the hydrogen content ratio I SiH2/I SiH associated with Si-H2 and Si-H bonds in p-i-n (PIN) a-Si:H solar cells by Raman spectroscopy. With decreasing I SiH2/I SiH, the efficiency, short-circuit current density, open-circuit voltage, and fill factor of PIN a-Si:H solar cells after light soaking tend to increase. Namely, I SiH2/I SiH correlates well with light-induced degradation of the cells. While a single I-layer has a low I SiH2/I SiH of 0.03-0.09, a PIN cell has I SiH2/I SiH = 0.18 because many Si-H2 bonds exist in the P-layer and at the P/I interface of the PIN solar cells. To realize PIN solar cells with higher stability, we must suppress Si-H2 bond formation in the P-layer and at the P/I interface.

  9. Measured and Simulated Dark J-V Characteristics of a-Si:H Single Junction p-i-n Solar Cells Irradiated with 40 keV Electrons

    NASA Technical Reports Server (NTRS)

    Lord, Kenneth; Woodyard, James R.

    2002-01-01

    The effect of 40 keV electron irradiation on a-Si:H p-i-n single-junction solar cells was investigated using measured and simulated dark J-V characteristics. EPRI-AMPS and PC-1D simulators were explored for use in the studies. The EPRI-AMPS simulator was employed and simulator parameters selected to produce agreement with measured J-V characteristics. Three current mechanisms were evident in the measured dark J-V characteristics after electron irradiation, namely, injection, shunting and a term of the form CV(sup m). Using a single discrete defect state level at the center of the band gap, good agreement was achieved between measured and simulated J-V characteristics in the forward-bias voltage region where the dark current density was dominated by injection. The current mechanism of the form CV(sup m) was removed by annealing for two hours at 140 C. Subsequent irradiation restored the CV(sup m) current mechanism and it was removed by a second anneal. Some evidence of the CV(sup m) term is present in device simulations with a higher level of discrete density of states located at the center of the bandgap.

  10. Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Kim, H. S.; Lugo, F.; Pearton, S. J.; Norton, D. P.; Wang, Yu-Lin; Ren, F.

    2008-03-01

    ZnO-based light emitting diodes were fabricated on c-plane sapphire using ZnO :P/Zn0.9Mg0.1O/ZnO/Zn0.9Mg0.1O/ZnO:Ga p-i-n heterostructures. The p-i-n heterojunction diodes are rectifying and show light emission under forward bias. The electroluminescence spectra shows deep level emission at low bias, but near band edge ultraviolet emission at high voltage bias. A decrease in leakage currents in as-fabricated structures was achieved via low temperature oxygen annealing.

  11. Neutron radiation induced degradation of diode characteristics

    NASA Astrophysics Data System (ADS)

    Khanna, S. M.; Pepper, G. T.; Stone, R. E.

    1992-12-01

    Neutron radiation effects on diode current-voltage characteristics have been studied for a variety of diode over 1(10)(exp 13) - 3(10)(exp 15) n/sq cm 1 MeV equivalent neutron fluence range. A classification scheme consisting of three types of neutron effects on diode forward characteristics is proposed here for the first time. For constant forward current I(sub F) higher than that in the generation-recombination regime, the diode voltage V(sub F) either increases with fluence phi (Type 1 diode), on V(sub F) first decreases with phi at lower fluence levels and then increases with phi at higher fluence levels (Type 2 diode), or V(sub F) decreases with phi at all fluence levels used in this work (Type 3 diode). Most of the previous results on p-n junction diodes correspond to Type 1 diode results. Type 2 diode results are rather rare in the literature. Several examples of Type 2 diode results are presented here. Type 3 diode results are reported here for other types of diodes not reported earlier. These results are explained qualitatively in terms of the theories for a p-n junction and for radiation effects on semiconductors. It is shown here that a type 3 diode could be developed as a high neutron fluence monitor with three orders of magnitude higher upper limit than the Harshaw p-i-n diode neutron fluence monitor under evaluation at the US Army Aberdeen Proving Grounds, Aberdeen, Md. The results also suggest a methodology for radiation hard diode development.

  12. Impact of silicon epitaxial thickness layer in high power diode devices

    NASA Astrophysics Data System (ADS)

    Mee, Cheh Chai; Arshad, M. K. Md.; Hashim, U.; Fathil, M. F. M.

    2016-07-01

    The p-i-n diode is one of the earliest semiconductor devices developed for power circuit application. It is formed with the intrinsically doped i.e. i-layer sandwiched between the p-type and n-type layers. In this paper, we focus on the integration of the intrinsic region of silicon p-i-n diode to the current-voltage characteristics. In our structure, n-type refers to the bulk substrate and intrinsic region refers to the epitaxial layer of the silicon substrate. We make a thickness variation in the intrinsic region of p-i-n diode and how it affects diode performance. An additional layer is added on the epitaxial layer during the process to control the diffusion from the bottom of bulk substrate. Result shows that intrinsic layer optimization has successfully enhances the diode device robustness in terms of diode current-voltage characteristics, which reflects better manufacturing yield and improve the final product performance.

  13. Development and fabrication of a fast recovery, high voltage power diode

    NASA Technical Reports Server (NTRS)

    Berman, A. H.; Balodis, V.; Duffin, J. J.; Gaugh, C.; Kkaratnicki, H. M.; Troutman, G.

    1981-01-01

    The use of positive bevels for P-I-N mesa structures to achieve high voltages is described. The technique of glass passivation for mesa structures is described. The utilization of high energy radiation to control the lifetime of carriers in silicon is reported as a means to achieve fast recovery times. Characterization data is reported and is in agreement with design concepts developed for power diodes.

  14. High-accuracy picosecond characterization of gain-switched laser diodes

    SciTech Connect

    Cova, S.; Lacaita, A.; Ghioni, M.; Ripamonti, G. )

    1989-12-15

    A unique combination of the time-correlated photon-counting technique and single-photon avalanche diode detectors gives an accurate characterization of gain-switched semiconductor lasers with picosecond resolution. The high sensitivity and the clean shape of the time response reveal even small features (reflections and relaxation oscillations), making a true optimization of the laser-diode operation possible. The technique outperforms the standard characterization with ultrafast p-i-n photodiodes and a sampling oscilloscope. In addition, compared with other methods, it has favorable features that greatly simplify the measurement.

  15. A micrometer-size movable light emitting area in a resonant tunneling light emitting diode

    SciTech Connect

    Pettinari, G.; Balakrishnan, N.; Makarovsky, O.; Campion, R. P.; Patanè, A.; Polimeni, A.; Capizzi, M.

    2013-12-09

    We report on the fabrication of a micrometer-size movable light emitting area in a GaAs/AlAs quantum well resonant tunneling p-i-n diode. The spatial position of the micrometer-size light emitting area shifts linearly with increasing applied bias, up to 30 μm for a bias increment of 0.2 V. Also, the simultaneous resonant tunneling injection of both electrons and holes into the quantum well states is achieved at specific positions of the diode, thus resulting in a tenfold increase of the electroluminescence intensity.

  16. Single-Layer Light-Emitting Diodes Using Organometal Halide Perovskite/Poly(ethylene oxide) Composite Thin Films.

    PubMed

    Li, Junqiang; Bade, Sri Ganesh R; Shan, Xin; Yu, Zhibin

    2015-09-16

    Organometal halide perovskite and poly(ethylene oxide) composite thin films are studied. Single-layer light-emitting diodes using the composite thin film sandwiched between indium tin oxide and indium-gallium eutectic alloy exhibit a low turn-on voltage and high brightness because of the ionic conductivity of the composite film and the formation of a p-i-n homojunction. PMID:26247326

  17. p-i-n/n-i-p type planar hybrid structure of highly efficient perovskite solar cells towards improved air stability: synthetic strategies and the role of p-type hole transport layer (HTL) and n-type electron transport layer (ETL) metal oxides.

    PubMed

    Mali, Sawanta S; Hong, Chang Kook

    2016-05-19

    There has been fast recent progress in perovskite solar cells (PSCs) towards low cost photovoltaic technology. Organometal mixed halide (MAPbX or FAPbX) perovskites are the most promising light absorbing material sandwiched between the electron transport layer (ETL) and hole transport layer (HTL). These two layers play a critical role in boosting the power conversion efficiency (PCE) and maintaining air stability. However, the device stability is a serious issue in regular as well as p-i-n inverted type perovskite solar cells. This mini-review briefly outlines the state-of-art of p-i-n/n-i-p type planar hybrid perovskite solar cells using MAPbX/FAPbX perovskite absorbing layers. Later, we will focus on recent trends, progress and further opportunities in exploring the air stable hybrid planar structure PSCs.

  18. p-i-n/n-i-p type planar hybrid structure of highly efficient perovskite solar cells towards improved air stability: synthetic strategies and the role of p-type hole transport layer (HTL) and n-type electron transport layer (ETL) metal oxides

    NASA Astrophysics Data System (ADS)

    Mali, Sawanta S.; Hong, Chang Kook

    2016-05-01

    There has been fast recent progress in perovskite solar cells (PSCs) towards low cost photovoltaic technology. Organometal mixed halide (MAPbX or FAPbX) perovskites are the most promising light absorbing material sandwiched between the electron transport layer (ETL) and hole transport layer (HTL). These two layers play a critical role in boosting the power conversion efficiency (PCE) and maintaining air stability. However, the device stability is a serious issue in regular as well as p-i-n inverted type perovskite solar cells. This mini-review briefly outlines the state-of-art of p-i-n/n-i-p type planar hybrid perovskite solar cells using MAPbX/FAPbX perovskite absorbing layers. Later, we will focus on recent trends, progress and further opportunities in exploring the air stable hybrid planar structure PSCs.

  19. Diamond based light-emitting diode for visible single-photon emission at room temperature

    NASA Astrophysics Data System (ADS)

    Lohrmann, A.; Pezzagna, S.; Dobrinets, I.; Spinicelli, P.; Jacques, V.; Roch, J.-F.; Meijer, J.; Zaitsev, A. M.

    2011-12-01

    Diamond-based p-i-n light-emitting diodes capable of single-photon emission in the visible spectral region at room temperature are discussed. The diodes were fabricated on a high quality single crystal diamond grown by chemical vapor deposition. Implantation of boron and phosphorus ions followed by annealing at a temperature of 1600 °C has been used for doping p-type and n-type areas, respectively. Electrical characterization of the devices demonstrates clear diode behavior. Spectra of electroluminescence generated in the i-area reveal sole emission from the neutral nitrogen-vacancy (NV) defects. Photon antibunching implies single-photon character of this emission when generated by individual NV defects.

  20. Quantification of energy loss mechanisms in organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Meerheim, Rico; Furno, Mauro; Hofmann, Simone; Lüssem, Björn; Leo, Karl

    2010-12-01

    The external quantum efficiency of organic light-emitting diodes (OLEDs) is limited by several loss mechanisms. By applying a numerical model for the efficiency analysis of OLED devices, we analyze the distribution of the different energy loss mechanisms in bottom and top emission organic light-emitting diodes. We validate the findings by the comparison with experimental data measured on red state-of-the-art p-i-n devices containing the red phosphorescent emitting dye iridium(III)bis[2-methyldibenzo-(f, h)quinoxaline](acetylacetonate) [Ir(MDQ)2(acac)]. The model is used to design extremely efficient bottom and top emission diodes with 21% and 27% external quantum efficiencies, respectively.

  1. Data Diode

    SciTech Connect

    2014-11-07

    The Data Diode is a data security technology that can be deployed within an organization's defense-in-depth computer network strategy for information assurance. For internal security, the software creates an environment within the network where an organization's approved users can work freely inside an enclave of protected data, but file transfers out of the enclave is restricted. For external security, once a network intruder has penetrated the network, the intruder is able to "see" the protected data, but is unable to download the actual data. During the time it takes for the intruder to search for a way around the obstacle created by the Data Diode, the network's intrusion detection technologies can locate and thwart the malicious intent of the intruder. Development of the Data Diode technology was made possible by funding from the Intelligence Advanced Research Projects Activity (IARPA).

  2. Data Diode

    2014-11-07

    The Data Diode is a data security technology that can be deployed within an organization's defense-in-depth computer network strategy for information assurance. For internal security, the software creates an environment within the network where an organization's approved users can work freely inside an enclave of protected data, but file transfers out of the enclave is restricted. For external security, once a network intruder has penetrated the network, the intruder is able to "see" the protectedmore » data, but is unable to download the actual data. During the time it takes for the intruder to search for a way around the obstacle created by the Data Diode, the network's intrusion detection technologies can locate and thwart the malicious intent of the intruder. Development of the Data Diode technology was made possible by funding from the Intelligence Advanced Research Projects Activity (IARPA).« less

  3. Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission

    NASA Astrophysics Data System (ADS)

    Kowsz, S. J.; Pynn, C. D.; Oh, S. H.; Farrell, R. M.; DenBaars, S. P.; Nakamura, S.

    2016-07-01

    We report a polarized white light-emitting device that monolithically integrates an electrically injected blue light-emitting diode grown on the (20 2 ¯ 1 ¯ ) face of a bulk GaN substrate and optically pumped InGaN quantum wells (QWs) with green and red light emission grown on the (20 2 ¯ 1 ) face. To overcome the challenges associated with growing high indium content InGaN QWs for long wavelength emission, a p-i-n doping profile was used to red-shift the emission wavelength of one of the optically pumped QWs by creating a built-in electric field in the same direction as the polarization-induced electric field. Emission peaks were observed at 450 nm from the electrically injected QW and at 520 nm and 590 nm from the optically pumped QWs, which were situated in n-i-n and p-i-n structures, respectively. The optically pumped QW in the p-i-n structure was grown at a growth temperature that was 10 °C colder compared to the QW in the n-i-n structure, so the emission from the QW in the p-i-n structure was red-shifted due to increased indium content as well as the built-in electric field. Modeling work confirmed that the built-in electric field made a greater contribution than the change in alloy composition to the red-shift in emission from the QW in the p-i-n structure. The combined emission from the red, green, and blue QWs resulted in white-light emission with Commission Internationale de l'Eclairage x- and y-chromaticity coordinates of (0.33, 0.35) and an optical polarization ratio of 0.30.

  4. The current and capacitance response of radiation-damaged silicon PIN diodes

    NASA Astrophysics Data System (ADS)

    Moloi, S. J.; McPherson, M.

    2009-11-01

    The current-voltage ( I- V) and capacitance-voltage ( C- V) characteristics of silicon p-i-n diodes have been investigated both prior to and after radiation-induced damage by 1 MeV neutrons. The results have been analysed and several rates of damage evaluated. The indication is mainly that radiation damage occurs only up to certain fluencies. Beyond these, the material becomes resistant to further damage. Thus, initial heavy radiation damage can be used to achieve radiation-hardness of detector diodes. This result is contrary to previous suggestions that continued irradiation renders the detectors inoperable but is in good agreement with our results on radiation-hardness induced by gold-doping.

  5. Header For Laser Diode

    NASA Technical Reports Server (NTRS)

    Rall, Jonathan A. R.; Spadin, Paul L.

    1990-01-01

    Header designed to contain laser diode. Output combined incoherently with outputs of other laser diodes in grating laser-beam combiner in optical communication system. Provides electrical connections to laser diode, cooling to thermally stabilize laser operation, and optomechanical adjustments that steer and focus laser beam. Range of adjustments provides for correction of worst-case decentering and defocusing of laser beam encountered with laser diodes. Mechanical configuration made simple to promote stability and keep cost low.

  6. Diode and Diode Circuits, a Programmed Text.

    ERIC Educational Resources Information Center

    Balabanian, Norman; Kirwin, Gerald J.

    This programed text on diode and diode circuits was developed under contract with the United States Office of Education as Number 4 in a series of materials for use in an electrical engineering sequence. It is intended as a supplement to a regular text and other instructional material. (DH)

  7. Laser Diode Ignition (LDI)

    NASA Technical Reports Server (NTRS)

    Kass, William J.; Andrews, Larry A.; Boney, Craig M.; Chow, Weng W.; Clements, James W.; Merson, John A.; Salas, F. Jim; Williams, Randy J.; Hinkle, Lane R.

    1994-01-01

    This paper reviews the status of the Laser Diode Ignition (LDI) program at Sandia National Labs. One watt laser diodes have been characterized for use with a single explosive actuator. Extensive measurements of the effect of electrostatic discharge (ESD) pulses on the laser diode optical output have been made. Characterization of optical fiber and connectors over temperature has been done. Multiple laser diodes have been packaged to ignite multiple explosive devices and an eight element laser diode array has been recently tested by igniting eight explosive devices at predetermined 100 ms intervals.

  8. Ultrastrong light-matter coupling in electrically doped microcavity organic light emitting diodes

    SciTech Connect

    Mazzeo, M.; Genco, A.; Gambino, S.; Ballarini, D.; Mangione, F.; Sanvitto, D.; Di Stefano, O.; Patanè, S.; Savasta, S.; Gigli, G.

    2014-06-09

    The coupling of the electromagnetic field with an electronic transition gives rise, for strong enough light-matter interactions, to hybrid states called exciton-polaritons. When the energy exchanged between light and matter becomes a significant fraction of the material transition energy an extreme optical regime called ultrastrong coupling (USC) is achieved. We report a microcavity embedded p-i-n monolithic organic light emitting diode working in USC, employing a thin film of squaraine dye as active layer. A normalized coupling ratio of 30% has been achieved at room temperature. These USC devices exhibit a dispersion-less angle-resolved electroluminescence that can be exploited for the realization of innovative optoelectronic devices. Our results may open the way towards electrically pumped polariton lasers.

  9. Ultrastrong light-matter coupling in electrically doped microcavity organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Mazzeo, M.; Genco, A.; Gambino, S.; Ballarini, D.; Mangione, F.; Di Stefano, O.; Patanè, S.; Savasta, S.; Sanvitto, D.; Gigli, G.

    2014-06-01

    The coupling of the electromagnetic field with an electronic transition gives rise, for strong enough light-matter interactions, to hybrid states called exciton-polaritons. When the energy exchanged between light and matter becomes a significant fraction of the material transition energy an extreme optical regime called ultrastrong coupling (USC) is achieved. We report a microcavity embedded p-i-n monolithic organic light emitting diode working in USC, employing a thin film of squaraine dye as active layer. A normalized coupling ratio of 30% has been achieved at room temperature. These USC devices exhibit a dispersion-less angle-resolved electroluminescence that can be exploited for the realization of innovative optoelectronic devices. Our results may open the way towards electrically pumped polariton lasers.

  10. Bypass diode integration

    NASA Technical Reports Server (NTRS)

    Shepard, N. F., Jr.

    1981-01-01

    Protective bypass diodes and mounting configurations which are applicable for use with photovoltaic modules having power dissipation requirements in the 5 to 50 watt range were investigated. Using PN silicon and Schottky diode characterization data on packaged diodes and diode chips, typical diodes were selected as representative for each range of current carrying capacity, an appropriate heat dissipating mounting concept along with its environmental enclosure was defined, and a thermal analysis relating junction temperature as a function of power dissipation was performed. In addition, the heat dissipating mounting device dimensions were varied to determine the effect on junction temperature. The results of the analysis are presented as a set of curves indicating junction temperature as a function of power dissipation for each diode package.

  11. Integral diode solar cells

    SciTech Connect

    Mardesich, W.; Gillanders, M.S.

    1984-05-01

    To achieve high power at minimum weight, innovative array designs are needed. In the case where shadows fall across a series element in a simple circuit, the effective power will be reduced or eliminated. The conventional method of eliminating this loss is the introduction of bypass diodes. This method increases cost and weight and reduces available surface area. An alternative solution to the shadowing problem is to use integral diode solar cells. The integral diode cell has a built-in diode on the back that protects the adjacent cell and passes the current if it is shadowed. This paper will describe the effort to produce the integral diode cells in a production facility with a minimum cost impact. The electrical characterization of the cell as well as the diode will be presented. These cells can be readily manufactured in a production facility using photoresist defined contacting process.

  12. Coaxial foilless diode

    SciTech Connect

    Kong, Long; Liu, QingXiang; Li, XiangQiang; Wang, ShaoMeng

    2014-05-15

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  13. Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

    NASA Astrophysics Data System (ADS)

    di Paola, D. M.; Kesaria, M.; Makarovsky, O.; Velichko, A.; Eaves, L.; Mori, N.; Krier, A.; Patanè, A.

    2016-08-01

    Interband tunnelling of carriers through a forbidden energy gap, known as Zener tunnelling, is a phenomenon of fundamental and technological interest. Its experimental observation in the Esaki p-n semiconductor diode has led to the first demonstration and exploitation of quantum tunnelling in a condensed matter system. Here we demonstrate a new type of Zener tunnelling that involves the resonant transmission of electrons through zero-dimensional (0D) states. In our devices, a narrow quantum well of the mid-infrared (MIR) alloy In(AsN) is placed in the intrinsic (i) layer of a p-i-n diode. The incorporation of nitrogen in the quantum well creates 0D states that are localized on nanometer lengthscales. These levels provide intermediate states that act as “stepping stones” for electrons tunnelling across the diode and give rise to a negative differential resistance (NDR) that is weakly dependent on temperature. These electron transport properties have potential for the development of nanometre-scale non-linear components for electronics and MIR photonics.

  14. Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

    PubMed Central

    Di Paola, D. M.; Kesaria, M.; Makarovsky, O.; Velichko, A.; Eaves, L.; Mori, N.; Krier, A.; Patanè, A.

    2016-01-01

    Interband tunnelling of carriers through a forbidden energy gap, known as Zener tunnelling, is a phenomenon of fundamental and technological interest. Its experimental observation in the Esaki p-n semiconductor diode has led to the first demonstration and exploitation of quantum tunnelling in a condensed matter system. Here we demonstrate a new type of Zener tunnelling that involves the resonant transmission of electrons through zero-dimensional (0D) states. In our devices, a narrow quantum well of the mid-infrared (MIR) alloy In(AsN) is placed in the intrinsic (i) layer of a p-i-n diode. The incorporation of nitrogen in the quantum well creates 0D states that are localized on nanometer lengthscales. These levels provide intermediate states that act as “stepping stones” for electrons tunnelling across the diode and give rise to a negative differential resistance (NDR) that is weakly dependent on temperature. These electron transport properties have potential for the development of nanometre-scale non-linear components for electronics and MIR photonics. PMID:27535896

  15. Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode.

    PubMed

    Di Paola, D M; Kesaria, M; Makarovsky, O; Velichko, A; Eaves, L; Mori, N; Krier, A; Patanè, A

    2016-08-18

    Interband tunnelling of carriers through a forbidden energy gap, known as Zener tunnelling, is a phenomenon of fundamental and technological interest. Its experimental observation in the Esaki p-n semiconductor diode has led to the first demonstration and exploitation of quantum tunnelling in a condensed matter system. Here we demonstrate a new type of Zener tunnelling that involves the resonant transmission of electrons through zero-dimensional (0D) states. In our devices, a narrow quantum well of the mid-infrared (MIR) alloy In(AsN) is placed in the intrinsic (i) layer of a p-i-n diode. The incorporation of nitrogen in the quantum well creates 0D states that are localized on nanometer lengthscales. These levels provide intermediate states that act as "stepping stones" for electrons tunnelling across the diode and give rise to a negative differential resistance (NDR) that is weakly dependent on temperature. These electron transport properties have potential for the development of nanometre-scale non-linear components for electronics and MIR photonics.

  16. Vortex diode jet

    DOEpatents

    Houck, Edward D.

    1994-01-01

    A fluid transfer system that combines a vortex diode with a jet ejector to transfer liquid from one tank to a second tank by a gas pressurization method having no moving mechanical parts in the fluid system. The vortex diode is a device that has a high resistance to flow in one direction and a low resistance to flow in the other.

  17. Diodes stabilize LED output

    NASA Technical Reports Server (NTRS)

    Deters, R. A.

    1977-01-01

    Small-signal diodes are placed in series with light-emitting diodes (LED's) to stabilize LED output against temperature fluctuations. Simple inexpensive method compensates for thermal fluctuations over a broad temperature range. Requiring few components, technique is particularly useful where circuit-board space is limited.

  18. Relativistic Bursian diode equilibria

    SciTech Connect

    Ender, A. Y.; Kuznetsov, V. I.; Schamel, H.

    2011-03-15

    A comprehensive study of steady-states of a planar vacuum diode driven by a cold relativistic electron beam is presented. The emitter electric field as a characteristic function for their existence is evaluated in dependence of the diode length, the applied potential V, and the relativistic beam factor at injection {gamma}{sub 0}. It is used to classify the different branches of possible solutions, which encompass electron flows that are (i) transmitted through the diode completely, (ii) partially reflected from a virtual cathode (VC) either within the diode region or at the collector side, and (iii) reflected totally. As a byproduct, the V and {gamma}{sub 0} dependences of both bifurcation points of the minimum potential and of the transmitted current are obtained and the ultrarelativistic limit, {gamma}{sub 0}>>1, is performed. In this highly relativistic regime, the density of electrons appears to be constant across the diode region except for a small area around the VC.

  19. PIN Diode Detectors

    NASA Astrophysics Data System (ADS)

    Ramírez-Jiménez, F. J.

    2008-07-01

    A review of the application of PIN diodes as radiation detectors in particle counting, X- and γ-ray spectroscopy, medical applications and charged particle spectroscopy is presented. As a practical example of its usefulness, a PIN diode and a low noise preamplifier are included in a nuclear spectroscopy chain for X-ray measurements. This is a laboratory session designed to review the main concepts needed to set up the detector-preamplifier array and to make measurements of X-ray energy spectra with a room temperature PIN diode. The results obtained are compared with those obtained with a high resolution cooled Si-Li detector.

  20. Inelastic tunnel diodes

    NASA Technical Reports Server (NTRS)

    Anderson, L. M. (Inventor)

    1984-01-01

    Power is extracted from plasmons, photons, or other guided electromagnetic waves at infrared to midultraviolet frequencies by inelastic tunneling in metal-insulator-semiconductor-metal diodes. Inelastic tunneling produces power by absorbing plasmons to pump electrons to higher potential. Specifically, an electron from a semiconductor layer absorbs a plasmon and simultaneously tunnels across an insulator into metal layer which is at higher potential. The diode voltage determines the fraction of energy extracted from the plasmons; any excess is lost to heat.

  1. Light-Emitting Diodes

    NASA Astrophysics Data System (ADS)

    Schubert, E. Fred

    2003-06-01

    Light emitting diodes (LEDs) are devices that are used in a myriad of applications, such as indicator lights in instruments, signage, illuminations, and communication. This graduate textbook covers all aspects of the technology and physics of infrared, visible-spectrum, and white light-emitting diodes (LEDs) made from III-V semiconductors. It reviews elementary properties of LEDs such as the electrical and optical characteristics. Exercises and illustrative examples reinforce the topics discussed.

  2. Light-emitting Diodes

    PubMed Central

    Opel, Daniel R.; Hagstrom, Erika; Pace, Aaron K.; Sisto, Krisanne; Hirano-Ali, Stefanie A.; Desai, Shraddha

    2015-01-01

    Background: In the early 1990s, the biological significance of light-emitting diodes was realized. Since this discovery, various light sources have been investigated for their cutaneous effects. Study design: A Medline search was performed on light-emitting diode lights and their therapeutic effects between 1996 and 2010. Additionally, an open-label, investigator-blinded study was performed using a yellow light-emitting diode device to treat acne, rosacea, photoaging, alopecia areata, and androgenetic alopecia. Results: The authors identified several case-based reports, small case series, and a few randomized controlled trials evaluating the use of four different wavelengths of light-emitting diodes. These devices were classified as red, blue, yellow, or infrared, and covered a wide range of clinical applications. The 21 patients the authors treated had mixed results regarding patient satisfaction and pre- and post-treatment evaluation of improvement in clinical appearance. Conclusion: Review of the literature revealed that differing wavelengths of light-emitting diode devices have many beneficial effects, including wound healing, acne treatment, sunburn prevention, phototherapy for facial rhytides, and skin rejuvenation. The authors’ clinical experience with a specific yellow light-emitting diode device was mixed, depending on the condition being treated, and was likely influenced by the device parameters. PMID:26155326

  3. Optical sensors based on monolithic integrated organic light-emitting diodes (OLEDs)

    NASA Astrophysics Data System (ADS)

    Reckziegel, S.; Kreye, D.; Puegner, T.; Grillberger, C.; Toerker, M.; Vogel, U.; Amelung, J.

    2008-04-01

    Organic light-emitting diodes (OLEDs) permit the monolithic integration of microelectronic circuits and light-emitting devices on the same silicon chip. By the use of integrated photodetectors, low-cost CMOS processes and simple packaging; economically produced optoelectronic integrated circuits (OEICs) with combined sensors and actuating elements can be realized. The OLEDs are deposited directly on the top metal layer. The metal layer serves as electrode and defines the bright area. Furthermore, the area below the electrodes can be used for integrated circuits. Due to efficient emitter with low operating voltage it is possible to renounce high-voltage devices depending on selected CMOS process. Thus manufacturing cost can be further reduced. Different CMOS metallizations were examined and their effects on organic light-emitting diodes were analyzed. Red (628nm) and orange (597nm) emitting p-i-n OLEDs with a radiance of 5W/m2sr at 2.8V and 3.0V and a half angle of +/-45° were realized on metal layer with low roughness. Near infra-red emitters are in development. We will present an optical microsystem. The functionality of combined sensors and actuating elements as well as advantages and difficulties of the monolithic integration of OLEDs and CMOS will be discussed. The chip was manufactured in a commercial 1μm CMOS technology. The fabricated microsystem combines three different types of sensors: a reflective sensor, a colour sensor and a particle flow sensor.

  4. Photovoltaic module bypass diode encapsulation

    NASA Technical Reports Server (NTRS)

    Shepard, N. J., Jr.

    1983-01-01

    The design and processing techniques necessary to incorporate bypass diodes within the module encapsulant are presented. The Semicon PN junction diode cells were selected. Diode junction to heat spreader thermal resistance measurements, performed on a variety of mounted diode chip types and sizes, have yielded values which are consistently below 1 deg C per watt, but show some instability when thermally cycled over the temperature range from -40 to 150 deg C. Three representative experimental modules, each incorporating integral bypass diode/heat spreader assemblies of various sizes, were designed. Thermal testing of these modules enabled the formulation of a recommended heat spreader plate sizing relationship. The production cost of three encapsulated bypass diode/heat spreader assemblies were compared with similarly rated externally mounted packaged diodes. It is concluded that, when proper designed and installed, these bypass diode devices will improve the overall reliability of a terrestrial array over a 20 year design lifetime.

  5. Heat pipes - Thermal diodes

    NASA Astrophysics Data System (ADS)

    Aptekar, B. F.; Baum, J. M.; Ivanovskii, M. N.; Kolgotin, F. F.; Serbin, V. I.

    The performance concept and peculiarities of the new type of thermal diode with the trap and with the wick breakage are dealt with in the report. The experimental data were obtained and analysed for the working fluid mass and the volume of the liquid in the wick on the forward-mode limiting heat transfer. The flow rate pulsation of the working fluid in the wick was observed visually on the setup with the transparent wall. The quantitative difference on the data on the investigated thermal diode and on the identical heat pipes without the wick breakage is found experimentally concerning the forward-mode limiting heat transfer.

  6. Dual function conducting polymer diodes

    DOEpatents

    Heeger, Alan J.; Yu, Gang

    1996-01-01

    Dual function diodes based on conjugated organic polymer active layers are disclosed. When positively biased the diodes function as light emitters. When negatively biased they are highly efficient photodiodes. Methods of preparation and use of these diodes in displays and input/output devices are also disclosed.

  7. Silicon Carbide Schottky Barrier Diode

    NASA Technical Reports Server (NTRS)

    Zhao, Jian H.; Sheng, Kuang; Lebron-Velilla, Ramon C.

    2004-01-01

    This chapter reviews the status of SiC Schottky barrier diode development. The fundamental of Schottky barrier diodes is first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes, and merged-pin-Schottky diodes. The development history is reviewed ad the key performance parameters are discussed. Applications of SiC SBDs in power electronic circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

  8. Spin-Wave Diode

    NASA Astrophysics Data System (ADS)

    Lan, Jin; Yu, Weichao; Wu, Ruqian; Xiao, Jiang

    2015-10-01

    A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures, and it lies at the heart of modern information systems. The spin wave or magnon, representing a collective quasiparticle excitation of the magnetic order in magnetic materials, is a promising candidate for an information carrier for the next-generation energy-saving technologies. Here, we propose a scalable and reprogrammable pure spin-wave logic hardware architecture using domain walls and surface anisotropy stripes as waveguides on a single magnetic wafer. We demonstrate theoretically the design principle of the simplest logic component, a spin-wave diode, utilizing the chiral bound states in a magnetic domain wall with a Dzyaloshinskii-Moriya interaction, and confirm its performance through micromagnetic simulations. Our findings open a new vista for realizing different types of pure spin-wave logic components and finally achieving an energy-efficient and hardware-reprogrammable spin-wave computer.

  9. Perforated diode neutron sensors

    NASA Astrophysics Data System (ADS)

    McNeil, Walter J.

    A novel design of neutron sensor was investigated and developed. The perforated, or micro-structured, diode neutron sensor is a concept that has the potential to enhance neutron sensitivity of a common solid-state sensor configuration. The common thin-film coated diode neutron sensor is the only semiconductor-based neutron sensor that has proven feasible for commercial use. However, the thin-film coating restricts neutron counting efficiency and severely limits the usefulness of the sensor. This research has shown that the perforated design, when properly implemented, can increase the neutron counting efficiency by greater than a factor of 4. Methods developed in this work enable detectors to be fabricated to meet needs such as miniaturization, portability, ruggedness, and adaptability. The new detectors may be used for unique applications such as neutron imaging or the search for special nuclear materials. The research and developments described in the work include the successful fabrication of variant perforated diode neutron detector designs, general explanations of fundamental radiation detector design (with added focus on neutron detection and compactness), as well as descriptive theory and sensor design modeling useful in predicting performance of these unique solid-state radiation sensors. Several aspects in design, fabrication, and operational performance have been considered and tested including neutron counting efficiency, gamma-ray response, perforation shapes and depths, and silicon processing variations. Finally, the successfully proven technology was applied to a 1-dimensional neutron sensor array system.

  10. Silicon nanowire Esaki diodes.

    PubMed

    Schmid, Heinz; Bessire, Cedric; Björk, Mikael T; Schenk, Andreas; Riel, Heike

    2012-02-01

    We report on the fabrication and characterization of silicon nanowire tunnel diodes. The silicon nanowires were grown on p-type Si substrates using Au-catalyzed vapor-liquid-solid growth and in situ n-type doping. Electrical measurements reveal Esaki diode characteristics with peak current densities of 3.6 kA/cm(2), peak-to-valley current ratios of up to 4.3, and reverse current densities of up to 300 kA/cm(2) at 0.5 V reverse bias. Strain-dependent current-voltage (I-V) measurements exhibit a decrease of the peak tunnel current with uniaxial tensile stress and an increase of 48% for 1.3 GPa compressive stress along the <111> growth direction, revealing the strain dependence of the Si band structure and thus the tunnel barrier. The contributions of phonons to the indirect tunneling process were probed by conductance measurements at 4.2 K. These measurements show phonon peaks at energies corresponding to the transverse acoustical and transverse optical phonons. In addition, the low-temperature conductance measurements were extended to higher biases to identify potential impurity states in the band gap. The results demonstrate that the most likely impurity, namely, Au from the catalyst particle, is not detectable, a finding that is also supported by the excellent device properties of the Esaki diodes reported here.

  11. Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes

    NASA Astrophysics Data System (ADS)

    Rodrigues, D. H.; Brasil, M. J. S. P.; Orlita, M.; Kunc, J.; Galeti, H. V. A.; Henini, M.; Taylor, D.; Galvão Gobato, Y.

    2016-04-01

    We have investigated the polarization-resolved electroluminescence (EL) of a p-i-n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x  =  5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an efficient spin-polarized source for holes tunneling through the device. Polarization degrees up to 80% were observed in the device around the hole resonance at 2 K under 15 T. Our results could be valuable for improving the hole-spin injection in GaMnAs-based spintronic devices.

  12. Cryogenic thermal diode heat pipes

    NASA Technical Reports Server (NTRS)

    Alario, J.

    1979-01-01

    The development of spiral artery cryogenic thermal diode heat pipes was continued. Ethane was the working fluid and stainless steel the heat pipe material in all cases. The major tasks included: (1) building a liquid blockage (blocking orifice) thermal diode suitable for the HEPP space flight experiment; (2) building a liquid trap thermal diode engineering model; (3) retesting the original liquid blockage engineering model, and (4) investigating the startup dynamics of artery cryogenic thermal diodes. An experimental investigation was also conducted into the wetting characteristics of ethane/stainless steel systems using a specially constructed chamber that permitted in situ observations.

  13. A new cryogenic diode thermometer

    NASA Astrophysics Data System (ADS)

    Courts, S. S.; Swinehart, P. R.; Yeager, C. J.

    2002-05-01

    While the introduction of yet another cryogenic diode thermometer is not earth shattering, a new diode thermometer, the DT-600 series, recently introduced by Lake Shore Cryotronics, possesses three features that make it unique among commercial diode thermometers. First, these diodes have been probed at the chip level, allowing for the availability of a bare chip thermometer matching a standard curve-an important feature in situations where real estate is at a premium (IR detectors), or where in-situ calibration is difficult. Second, the thermometry industry has assumed that interchangeability should be best at low temperatures. Thus, good interchangeability at room temperatures implies a very good interchangeability at cryogenic temperature, resulting in a premium priced sensor. The DT-600 series diode thermometer is available in an interchangeability band comparable to platinum RTDs with the added advantage of interchangeability to 2 K. Third, and most important, the DT-600 series diode does not exhibit an instability in the I-V characteristic in the 8 K to 20 K temperature range that is observed in other commercial diode thermometer devices [1]. This paper presents performance characteristics for the DT-600 series diode thermometer along with a comparison of I-V curves for this device and other commercial diode thermometers exhibiting an I-V instability.

  14. Cylindrical electron beam diode

    DOEpatents

    Bolduc, Paul E.

    1976-01-01

    A diode discharge device may include a tubular anode concentrically encircled by and spaced from a tubular cathode electrode with ends intermediate the ends of said anode electrode, and a metal conductive housing having a tubular wall disposed around the cathode electrode with end walls connected to the anode electrode. High energy electron current coupling is through an opening in the housing tubular wall to a portion of the cathode electrode intermediate its ends. Suitable utilization means may be within the anode electrode at positions to be irradiated by electrons emitted from the cathode electrode and transmitted through the anode walls.

  15. Semiconductor laser diode

    SciTech Connect

    Amann, M.C.

    1982-09-28

    A semiconductor laser diode is disclosed with a connection electrode consisting of a chromium/gold alloy on a highly-doped gallium arsenide layer. The gallium arsenide layer is strip shaped and overlies a further lesser doped layer of gallium aluminum arsenide. The chromium/gold contact has a low-resistance junction only in the region of the more highly doped layer so that a strip shaped restriction of the current path occurs in the semiconductor body. Accordingly, a laser-active zone which is only strip-shaped is achieved.

  16. Making an ultrastable diode laser

    NASA Astrophysics Data System (ADS)

    Archibald, James; Washburn, Matt; van Zijll, Marshall; Erickson, Christopher; Neyenhuis, Brian; Doermann, Greg; Durfee, Dallin

    2006-10-01

    We have constructed a 657nm diode laser with excellent stability for use in an atom interferometer. The laser is a grating-stabilized diode laser is locked to a high-finesse cavity using the Pound-Drever-Hall method. We have measured a linewidth of about 1 kHz and are working on several improvements which should further reduce our linewidth.

  17. Diode laser applications in urology

    NASA Astrophysics Data System (ADS)

    Sam, Richard C.; Esch, Victor C.

    1995-05-01

    Diode lasers are air-cooled, efficient, compact devices which have the potential of very low cost when produced in quantity. The characteristics of diode lasers are discussed. Their applications in interstitial thermal treatment of the prostate, and laser ablation of prostate tissues, will be presented.

  18. Gallium phosphide high temperature diodes

    NASA Technical Reports Server (NTRS)

    Chaffin, R. J.; Dawson, L. R.

    1981-01-01

    High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

  19. Light Emitting Diode (LED)

    NASA Technical Reports Server (NTRS)

    1997-01-01

    A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique called photodynamic therapy, requires the surgeon to use tiny pinhead-size Light Emitting Diodes (LEDs) (a source releasing long wavelengths of light) to activate light-sensitive, tumor-treating drugs. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can also be used for hours at a time while still remaining cool to the touch. The LED probe consists of 144 tiny pinhead-size diodes, is 9-inches long, and about one-half-inch in diameter. The small balloon aids in even distribution of the light source. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The probe was developed for photodynamic cancer therapy by the Marshall Space Flight Center under a NASA Small Business Innovative Research program grant.

  20. Emitron: microwave diode

    DOEpatents

    Craig, G.D.; Pettibone, J.S.; Drobot, A.T.

    1982-05-06

    The invention comprises a new class of device, driven by electron or other charged particle flow, for producing coherent microwaves by utilizing the interaction of electromagnetic waves with electron flow in diodes not requiring an external magnetic field. Anode and cathode surfaces are electrically charged with respect to one another by electron flow, for example caused by a Marx bank voltage source or by other charged particle flow, for example by a high energy charged particle beam. This produces an electric field which stimulates an emitted electron beam to flow in the anode-cathode region. The emitted electrons are accelerated by the electric field and coherent microwaves are produced by the three dimensional spatial and temporal interaction of the accelerated electrons with geometrically allowed microwave modes which results in the bunching of the electrons and the pumping of at least one dominant microwave mode.

  1. Nanofluidic osmotic diodes

    NASA Astrophysics Data System (ADS)

    Bocquet, Lyderic; Picallo, Clara; Gravelle, Simon; Joly, Laurent; Charlaix, Elisabeth

    2013-11-01

    Osmosis describes the flow of water across semipermeable membranes powered by the chemical free energy extracted from salinity gradients. While osmosis can be expressed in simple terms via the van't Hoff ideal gas formula for the osmotic pressure, it is a complex phenomenon taking its roots in the subtle interactions occurring at the scale of the membrane nanopores. Here we use new opportunities offered by nanofluidic systems to create an osmotic diode exhibiting asymmetric water flow under reversal of osmotic driving. We show that a surface charge asymmetry built on a nanochannel surface leads to non-linear couplings between water flow and the ion dynamics, which are capable of water flow rectification. This phenomenon opens new opportunities for water purification and complex flow control in nanochannels.

  2. White light emitting diodes

    NASA Astrophysics Data System (ADS)

    Baur, J.; Schlotter, P.; Schneider, J.

    Using blue-emitting GaN LEDs on SiC substrate chips as primary light sources, we have fabricated green, yellow, red and white light emitting diodes (LUCOLEDs). The generation of mixed colors, as turquoise and magenta, is also demonstrated. The underlying physical principle is that of luminescence downconversion (Stokes shift), as typical for organic dye molecules and many inorganic phosphors. For white light generation via the LUCOLED principle, the phosphor Y3Al5O12:Ce3+(4f1) is ideally suited. The optical characteristics of Ce3+(4f1) in Y3Al5O12(YAG) are discussed in detail. Possibilities to "tune" the white color by various substitutions in the garnet lattice are shortly outlined.

  3. Laterally injected light-emitting diode and laser diode

    SciTech Connect

    Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

    2015-06-16

    A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

  4. Enhanced vbasis laser diode package

    DOEpatents

    Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack

    2014-08-19

    A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

  5. Thermometric Property of a Diode.

    ERIC Educational Resources Information Center

    Inman, Fred W.; Woodruff, Dan

    1995-01-01

    Presents a simple way to implement the thermometric property of a semiconductor diode to produce a thermometer with a nearly linear dependence upon temperature over a wide range of temperatures. (JRH)

  6. Diode-pumped dye laser

    NASA Astrophysics Data System (ADS)

    Burdukova, O. A.; Gorbunkov, M. V.; Petukhov, V. A.; Semenov, M. A.

    2016-10-01

    This letter reports diode pumping for dye lasers. We offer a pulsed dye laser with an astigmatism-compensated three-mirror cavity and side pumping by blue laser diodes with 200 ns pulse duration. Eight dyes were tested. Four dyes provided a slope efficiency of more than 10% and the highest slope efficiency (18%) was obtained for laser dye Coumarin 540A in benzyl alcohol.

  7. Hybrid method of making an amorphous silicon P-I-N semiconductor device

    DOEpatents

    Moustakas, Theodore D.; Morel, Don L.; Abeles, Benjamin

    1983-10-04

    The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.

  8. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

    DOEpatents

    Madan, A.

    1984-12-10

    A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

  9. Light Emitting Diodes (LEDs)

    NASA Technical Reports Server (NTRS)

    1997-01-01

    A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique, called Photodynamic Therapy, requires the surgeon to use tiny, pinhead-size Light Emitting Diodes (LEDs) (a source that releases long wavelengths of light ) to activate light-sensitive, tumor-treating drugs. 'A young woman operated on in May 1999 has fully recovered with no complications and no evidence of the tumor coming back,' said Dr. Harry Whelan, a pediatric neurologist at the Medical Hospital of Wisconsin in Milwaukee. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can be used for hours at a time while still remaining cool to the touch. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The LEDs, developed and managed by NASA's Marshall Space Flight Center, have been used on seven Space Shuttle flights inside the Microgravity Astroculture Facility. This technology has also been successfully used to further commercial research in crop growth.

  10. Carbon-Nanotube Schottky Diodes

    NASA Technical Reports Server (NTRS)

    Manohara, Harish; Wong, Eric; Schlecht, Erich; Hunt, Brian; Siegel, Peter

    2006-01-01

    Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources. Initial performance predictions have shown that the performance characteristics of these devices can exceed those of the state-of-the-art solid-state Schottky diodes that have been the components of choice for room-temperature submillimeter-wave sensors for more than 50 years. For state-of-the-art Schottky diodes used as detectors at frequencies above a few hundred gigahertz, the inherent parasitic capacitances associated with their semiconductor junction areas and the resistances associated with low electron mobilities limit achievable sensitivity. The performance of such a detector falls off approximately exponentially with frequency above 500 GHz. Moreover, when used as frequency multipliers for generating signals, state-of-the-art solid-state Schottky diodes exhibit extremely low efficiencies, generally putting out only micro-watts of power at frequencies up to 1.5 THz. The shortcomings of the state-of-the-art solid-state Schottky diodes can be overcome by exploiting the unique electronic properties of semiconducting carbon nanotubes. A single-walled carbon nanotube can be metallic or semiconducting, depending on its chirality, and exhibits high electron mobility (recently reported to be approx.= 2x10(exp 5)sq cm/V-s) and low parasitic capacitance. Because of the narrowness of nanotubes, Schottky diodes based on carbon nanotubes have ultra-small junction areas (of the order of a few square nanometers) and consequent junction capacitances of the order of 10(exp -18) F, which translates to cutoff frequency >5 THz. Because the turn-on power levels of these devices are very low (of the order of nano-watts), the input power levels needed for pumping local oscillators containing these devices should be lower than those needed for local oscillators containing state-of-the-art solid

  11. Diode laser array

    NASA Technical Reports Server (NTRS)

    Carlson, Nils W. (Inventor); Evans, Gary A. (Inventor); Kaiser, Charlie J. (Inventor)

    1990-01-01

    A diode laser array comprises a substrate of a semiconductor material having first and second opposed surfaces. On the first surface is a plurality of spaced gain sections and a separate distributed Bragg reflector passive waveguide at each end of each gain section and optically connecting the gain sections. Each gain section includes a cavity therein wherein charge carriers are generated and recombine to generate light which is confined in the cavity. Also, the cavity, which is preferably a quantum well cavity, provides both a high differential gain and potentially large depth of loss modulation. Each waveguide has a wavelength which is preferably formed by an extension of the cavity of the gain sections and a grating. The grating has a period which provides a selective feedback of light into the gain sections to supporting lasing, which allows some of the light to be emitted from the waveguide normal to the surface of the substrate and which allows optical coupling of the gain sections. Also, the grating period provides an operating wavelength which is on the short wavelength side of the gain period of the gain sections required for laser oscillation. An RF pulse is applied so as to maximize the magnitude of the loss modulation and the differential gain in the gain sections. The array is operated by applying a DC bias to all the gain sections at a level just below the threshold of the gain sections to only one of the gain sections which raises the bias in all of the gain sections to a level that causes all of the gain sections to oscillate. Thus, a small bias can turn the array on and off.

  12. Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate

    NASA Astrophysics Data System (ADS)

    Lin, Guangyang; Yi, Xiaohui; Li, Cheng; Chen, Ningli; Zhang, Lu; Chen, Songyan; Huang, Wei; Wang, Jianyuan; Xiong, Xihuan; Sun, Jiaming

    2016-10-01

    A lateral p-Si0.05Ge0.95/i-Ge/n-Si0.05Ge0.95 heterojunction light emitting diode on a silicon-on-insulator (SOI) substrate was proposed, which is profitable to achieve higher luminous extraction compared to vertical junctions. Due to the high carrier injection ratio of heterostructures and optical reflection at the SiO2/Si interface of the SOI, strong room temperature electroluminescence (EL) at around 1600 nm from the direct bandgap of i-Ge with 0.30% tensile strain was observed. The EL peak intensity of the lateral heterojunction is enhanced by ˜4 folds with a larger peak energy than that of the vertical Ge p-i-n homojunction, suggesting that the light emitting efficiency of the lateral heterojunction is effectively improved. The EL peak intensity of the lateral heterojunction, which increases quadratically with injection current density, becomes stronger for diodes with a wider i-Ge region. The CMOS compatible fabrication process of the lateral heterojunctions paves the way for the integration of the light source with the Ge metal-oxide-semiconductor field-effect-transistor.

  13. Mounting for diodes provides efficient heat sink

    NASA Technical Reports Server (NTRS)

    1964-01-01

    Efficient heat sink is provided by soldering diodes to metal support bars which are brazed to a ceramic base. Electrical connections between diodes on adjacent bars are made flexible by metal strips which aid in heat dissipation.

  14. Method of making diode structures

    DOEpatents

    Compaan, Alvin D.; Gupta, Akhlesh

    2006-11-28

    A method of making a diode structure includes the step of depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer, and depositing an active semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer. A back electrode coating layer is applied to form a diode structure.

  15. Low Temperature Thermometry Using Inexpensive Silicon Diodes.

    ERIC Educational Resources Information Center

    Waltham, N. R.; And Others

    1981-01-01

    Describes the use of silicon diodes for low temperature thermometry in the teaching laboratory. A simple and inexpensive circuit for display of the diode forward voltage under constant current conditions is described, and its application in the evaluation of low cost silicon diodes as low temperature thermometers is presented. (SK)

  16. Characterization of Stock Blu-ray diodes

    NASA Astrophysics Data System (ADS)

    Cunningham, Mark; Archibald, James; Erickson, Christopher; Durfee, Dallin

    2010-10-01

    I am developing a process to test and characterize diodes of unknown wavelengths. using a B&WTEK Spectrometer we are characterizing the wavelength of 405 nm blu-ray diodes purchased in bulk. With the known error in production of the Diode Lasers we are hoping to find a diode at 408 nm to use in driving a raman transition between hyperfine states of strontium 87 ions. The bulk of the project is a java program that communicates with the spectrometer and graphically displays the intensities of the wavelengths from the laser diodes.

  17. Varactor-diode modulator yields conversion gain

    NASA Astrophysics Data System (ADS)

    Breitkopf, K.

    1980-05-01

    It is shown that varactor diodes used as modulator elements can make a balanced diode mixer yield conversion gain when employed in an upconverter. Replacing the normal mixer diodes with varactor diodes and inserting the IF and LO voltages at a level that drives the diodes into their nonlinear voltage-capacitance region produces a parametric amplifying effect. This modification results in conversion gain rather than loss, and brings the desired output power up to the 0.1-1.0 W level. The use of this technique in a lower-sideband UHF TV upconverter is considered.

  18. Microprobe study of diode corrosion

    SciTech Connect

    Hlava, P.; Braithwaite, J.; Sorensen, R.

    1996-12-31

    A few diodes from a production lot were discovered to have unacceptable current leak rates after about 5 years of storage. Inspection revealed the presence of copper sulfide deposits that bridged the external body of the diode and presumably provided a leakage path. Figure 1 shows the physical configuration of a diode. The function of this device is performed by a silicon-based semiconductor that is bonded between two cylinders of tungsten with copper headpins (Cu wire with a flat {open_quotes}nail-head{close_quotes} formed on one end) brazed to the opposite ends of the cylinders. A tropical ring of glass protects the Si chip. All exposed metal parts are covered by an immersion plating of Ag. Then the entire assembly is coated with black epoxy and a band of green ink is applied to the cathode end. During storage, each diode was placed in a cardboard holder and secured in stacks of about ten with rubber bands. Analytical and environmental exposure studies were performed at Allied Signal and Sandia to determine the cause and potential long-term significance of this corrosion product and help identify the corrosion mechanism.

  19. Fabrication and characterization of ultraviolet-emitting diodes composed of transparent p-n heterojunction, p-SrCu2O2 and n-ZnO

    NASA Astrophysics Data System (ADS)

    Ohta, Hiromichi; Orita, Masahiro; Hirano, Masahiro; Hosono, Hideo

    2001-05-01

    An ultraviolet light-emitting diode (UV-LED) was realized using a p-n heterojunction composed of the transparent oxide semiconductors p-SrCu2O2 and n-ZnO. A Ni/SrCu2O2/ZnO/ITO multilayered film was epitaxially grown on an extremely flat YSZ (111) surface by a pulsed-laser deposition technique. SrCu2O2 (112) was preferentially grown on ZnO (0001) at 350°C, while the preferential plane was changed into the (100) when the temperature was increased to 600 °C. The grown films were processed by conventional photolithography followed by reactive ion etching to fabricate heterojunction diodes. The resulting devices exhibited rectifying I-V characteristics inherent to p-n junctions. A relatively sharp electroluminescence band centered at 382 nm, attributed to transitions associated with exciton-exciton collision or electron-hole plasma in ZnO, was generated by applying a forward bias voltage greater than the turn-on voltage of 3 V. UV-LED performance characteristics such as threshold current and conversion efficiency improved with higher SrCu2O2 deposition temperatures. On the other hand, increased laser power density at 600 °C during deposition raised the incidence of insulating layer formation between the p and n layers, probably due to migration of K+ ions doped as an acceptor impurity. The resulting p-i-n diode emits broad luminescence centered at 500 nm for forward voltage greater than 14 V.

  20. Quantum Noise in Laser Diodes

    NASA Technical Reports Server (NTRS)

    Giacobino, E.; Marin, F.; Bramati, A.; Jost, V.; Poizat, J. Ph.; Roch, J.-F.; Grangier, P.; Zhang, T.-C.

    1996-01-01

    We have investigated the intensity noise of single mode laser diodes, either free-running or using different types of line narrowing techniques at room temperature. We have measured an intensity squeezing of 1.2 dB with grating-extended cavity lasers and 1.4 dB with injection locked lasers (respectively 1.6 dB and 2.3 dB inferred at the laser output). We have observed that the intensity noise of a free-running nominally single mode laser diode results from a cancellation effect between large anti-correlated fluctuations of the main mode and of weak longitudinal side modes. Reducing the side modes by line narrowing techniques results in intensity squeezing.

  1. Megahertz organic/polymer diodes

    SciTech Connect

    Katz, Howard Edan; Sun, Jia; Pal, Nath Bhola

    2012-12-11

    Featured is an organic/polymer diode having a first layer composed essentially of one of an organic semiconductor material or a polymeric semiconductor material and a second layer formed on the first layer and being electrically coupled to the first layer such that current flows through the layers in one direction when a voltage is applied in one direction. The second layer is essentially composed of a material whose characteristics and properties are such that when formed on the first layer, the diode is capable of high frequency rectifications on the order of megahertz rectifications such as for example rectifications at one of above 100KHz, 500KhZ, IMHz, or 10 MHz. In further embodiments, the layers are arranged so as to be exposed to atmosphere.

  2. Thermal (Silicon Diode) Data Acquisition Systems

    NASA Technical Reports Server (NTRS)

    Wright, Ernest; Kegley, Jeff

    2008-01-01

    Marshall Space Flight Center s X-ray Cryogenic Facility (XRCF) has been performing cryogenic testing to 20 Kelvin since 1999. Two configurations for acquiring data from silicon diode temperature sensors have been implemented at the facility. The facility's environment is recorded via a data acquisition system capable of reading up to 60 silicon diodes. Test article temperature is recorded by a second data acquisition system capable of reading 150+ silicon diodes. The specifications and architecture of both systems will be presented.

  3. Thermal (Silicon Diode) Data Acquisition System

    NASA Technical Reports Server (NTRS)

    Kegley, Jeffrey

    2008-01-01

    Marshall Space Flight Center's X-ray Calibration Facility (XRCF) has been performing cryogenic testing to 20 Kelvin since 1999. Two configurations for acquiring data from silicon diode temperature sensors have been implemented at the facility. The facility's environment is recorded via a data acquisition system capable of reading up to 60 silicon diodes. Test article temperature is recorded by a second data acquisition system capable of reading 150+ silicon diodes. The specifications and architecture of both systems will be presented.

  4. Numerical simulation of spherical plasma focus diode

    NASA Astrophysics Data System (ADS)

    Jiang, W.; Masugata, K.; Yatsui, K.

    1995-06-01

    A self-magnetically insulated, three-dimensionally-focused ion-beam diode, spherical plasma focus diode (SPFD), is studied by numerical simulation using a two-dimensional, electromagnetic, relativistic particle-in-cell computer code. The calculated results of the diode impedance, the ion-current efficiency, and the focusing characteristics of the ion beam are presented. These results, except the data of the ion-beam current, are in good agreement with the experimental results.

  5. Doris - Diode / Jason-1: Efficient!

    NASA Astrophysics Data System (ADS)

    Jayles, C.; Rozo, F.

    The Jason-1 satellite has been successfully launched on December 7th, 2001. The DORIS receiver was switched on 10 hours after the launch and has been operating properly since then. Every function has shown a nominal behaviour, in particular the self-initialisation has been achieved despite the early spinned mode of the satellite. DIODE's routine filter has then converged and the receiver self-programming mode has been autonomously activated since the second day of the flight. Time and posi- tion estimations are fully available since the very beginning. During the first days, filters have been tuned in order to optimize performance. Since the previous DIODE / SPOT4 version, the accuracy has been highly improved: twelve days of Jason-1 real measurements have already been analysed. DIODE estimations are compared with the ZOOM medium orbit ephemeris (M.O.E.), which have an accuracy of a few cen- timeters on the radial component. The standard deviation is already better than 13 cm radial, 33 cm along-track and 59 cm cross-track. DIODE position estimations will be used for quick-look processing of the altimetric data (in the O.S.D.R.). For this purpose, the accuracy specified by altimetric users was 30 cm RMS on the radial com- ponent, and 1 meter RMS in 3-D. The preliminary results presented here, have been obtained very early during Jason-1 in-flight calibration. They are not definitive yet: several additional improvements are going to be uploaded (in particular completion of the on-board beacon coordinates). But the requests are already met. From now on, constellations, automated Earth observation systems, and satellite designers in gen- eral, should be confident that on-board orbit computation has become an operationnal facility, with a pretty good accuracy and a convincing reliability: on-board orbit de- termination is today a reality and has been in-flight demonstrated. This concept enters now an operationnal phase, and its main ideas and principles are validated

  6. Physics and applications of laser diode chaos

    NASA Astrophysics Data System (ADS)

    Sciamanna, M.; Shore, K. A.

    2015-03-01

    This Review Article provides an overview of chaos in laser diodes by surveying experimental achievements in the area and explaining the theory behind the phenomenon. The fundamental physics underpinning laser diode chaos and also the opportunities for harnessing it for potential applications are discussed. The availability and ease of operation of laser diodes, in a wide range of configurations, make them a convenient testbed for exploring basic aspects of nonlinear and chaotic dynamics. It also makes them attractive for practical tasks, such as chaos-based secure communications and random number generation. Avenues for future research and development of chaotic laser diodes are also identified.

  7. Effects of radiation on laser diodes.

    SciTech Connect

    Phifer, Carol Celeste

    2004-09-01

    The effects of ionizing and neutron radiation on the characteristics and performance of laser diodes are reviewed, and the formation mechanisms for nonradiative recombination centers, the primary type of radiation damage in laser diodes, are discussed. Additional topics include the detrimental effects of aluminum in the active (lasing) volume, the transient effects of high-dose-rate pulses of ionizing radiation, and a summary of ways to improve the radiation hardness of laser diodes. Radiation effects on laser diodes emitting in the wavelength region around 808 nm are emphasized.

  8. Excess noise in tunable diode lasers

    NASA Technical Reports Server (NTRS)

    Rowland, C. W.

    1981-01-01

    The method and the apparatus for identifying excess-noise regions in tunable diode lasers are described. These diode lasers exhibit regions of excess noise as their wavelength is tuned. If a tunable diode laser is to be used as a local oscillator in a superheterodyne optical receiver, these excess-noise regions severely degrade the performance of the receiver. Measurement results for several tunable diode lasers are given. These results indicate that excess noise is not necessarily associated with a particular wavelength, and that it is possible to select temperature and injection current such that the most ideal performance is achieved.

  9. High-power laser diodes, laser diode modules, and their applications

    NASA Astrophysics Data System (ADS)

    Daiminger, Franz X.; Dorsch, Friedhelm; Lorenzen, Dirk

    1998-12-01

    High power laser diodes and especially high power laser diode modules made enormous progress in the last few years. Different aspects of high power laser diodes are treated starting from general description of high power laser diodes and their mounting techniques, characterizing the electro- optical behavior of single laser bars and finally presenting beamshaping optics for the collimation of large modules. The later technique allows for symmetrical focal spots in the kilowatt range with a beam quality of about 170 mm*mrad. Different aspects of current applications of high power laser diodes are presented.

  10. A Single Diblock Molecular Diode

    NASA Astrophysics Data System (ADS)

    Joshua Obodo, Tobechukwu; Murat, Altynbek; Udo Schwingenschlögl, Udo

    2015-03-01

    We investigate the rectification behavior of the diblock dipyrimidinyldiphenyl molecule and its derivates with increasing donor groups using self-interaction corrected density functional theory combined with the non-equilibrium Green's function method. In particular, we study a tandem setup for the representative optimized rectifier, finding that it significantly improves the rectification behavior of the molecular diode. Moreover, we find that the molecule consisting of donor and acceptor mimics a pn-junction, whereas the tandem setup does not behave as a pn-pn junction, rather like a p-np-n junction. Our results help explain the mechanism behind the experimentally observed rectification behavior of the molecule.

  11. Semiconductor diode with external field modulation

    DOEpatents

    Nasby, Robert D.

    2000-01-01

    A non-destructive-readout nonvolatile semiconductor diode switching device that may be used as a memory element is disclosed. The diode switching device is formed with a ferroelectric material disposed above a rectifying junction to control the conduction characteristics therein by means of a remanent polarization. The invention may be used for the formation of integrated circuit memories for the storage of information.

  12. Demonstrating the Light-Emitting Diode.

    ERIC Educational Resources Information Center

    Johnson, David A.

    1995-01-01

    Describes a simple inexpensive circuit which can be used to quickly demonstrate the basic function and versatility of the solid state diode. Can be used to demonstrate the light-emitting diode (LED) as a light emitter, temperature sensor, light detector with both a linear and logarithmic response, and charge storage device. (JRH)

  13. Self-Injection Locking Of Diode Lasers

    NASA Technical Reports Server (NTRS)

    Hemmati, H.

    1991-01-01

    Simple optical coupling scheme locks array of gain-guided diode lasers into oscillation in single mode and with single-lobed output beam. Selective feedback from thin etalon self-injection-locks array into desired mode. One application of new scheme for pumping of neodymium: yttrium aluminum garnet lasers with diode-laser arrays.

  14. Laser diode package with enhanced cooling

    DOEpatents

    Deri, Robert J.; Kotovsky, Jack; Spadaccini, Christopher M.

    2011-09-13

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  15. Laser diode package with enhanced cooling

    DOEpatents

    Deri, Robert J.; Kotovsky, Jack; Spadaccini, Christopher M.

    2012-06-26

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  16. Laser diode package with enhanced cooling

    DOEpatents

    Deri, Robert J.; Kotovsky, Jack; Spadaccini, Christopher M.

    2012-06-12

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  17. Electrical properties of bulk-barrier diodes

    NASA Astrophysics Data System (ADS)

    Mader, H.

    1982-11-01

    Like Schottky-barrier diodes, bulk-barrier diodes (BBD's) are majority-carrier devices and can, therefore, be used up to very high frequencies. In both types of diodes, charge-carrier transportation is determined by an energy barrier. In Schottky-barrier diodes the barrier is located at the metal/semiconductor boundary, whereas in BBD's it is found inside the semiconductor and is the result of a space-charge zone in a three-layered n-p-n or p-n-p structure with a very thin base region. The height of the barrier is determined by technological parameters such as doping density and layer thickness. As the current in BBD's, just as in Schottky-barrier diodes, is an exponential function of barrier height, the current-voltage characteristic can be adjusted by technological means.

  18. Sixty GHz IMPATT diode development

    NASA Technical Reports Server (NTRS)

    Ma, Y. E.; Chen, J.; Benko, E.; Barger, M. J.; Nghiem, H.; Trinh, T. Q.; Kung, J.

    1985-01-01

    The objective of this program is to develop 60 GHz GaAs IMPATT Diodes suitable for communications applications. The performance goal of the 60 GHz IMPATT is 1W CW output power with a conversion efficiency of 15 percent and 10 year life time. During the course of the program, double drift (DD) GaAs IMPATT Diodes have been developed resulting in the state of the art performance at V band frequencies. A CW output power of 1.12 W was demonstrated at 51.9 GHz with 9.7 percent efficiency. The best conversion efficiency achieved was 15.3 percent. V band DD GaAs IMPATTs were developed using both small signal and large signal analyses. GaAs wafers of DD flat, DD hybrid, and DD Read profiles using molecular beam epitaxy (MBE) were developed with excellent doping profile control. Wafer evaluation was routinely made by the capacitance versus voltage (C-V) measurement. Ion mass spectrometry (SIMS) analysis was also used for more detailed profile evaluation.

  19. Broadband light-emitting diode

    DOEpatents

    Fritz, I.J.; Klem, J.F.; Hafich, M.J.

    1998-07-14

    A broadband light-emitting diode is disclosed. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3--2 {micro}m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-divisionmultiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft. 10 figs.

  20. Broadband light-emitting diode

    DOEpatents

    Fritz, Ian J.; Klem, John F.; Hafich, Michael J.

    1998-01-01

    A broadband light-emitting diode. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3-2 .mu.m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-division-multiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft.

  1. Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry

    SciTech Connect

    Meriggi, Laura Ding, Ying; Thayne, Iain G.; Sorel, Marc; Steer, Matthew J.; MacGregor, Calum; Ironside, Charles N.

    2015-02-14

    We report on the impact of lateral current spreading on light emission from aluminium indium antimonide (AlInSb) mid-infrared p-i-n light-emitting diodes (LEDs) grown by molecular beam epitaxy on a GaAs substrate. Due to the high effective mass of holes in Al{sub x}In{sub 1−x}Sb, the resistivity of p-type material determines the 3-D distribution of current flow in the devices. This work shows that maximum light emission, as measured by electroluminescence, and 3-times wall-plug efficiency improvement were obtained at room temperature from devices with a p-type contact grid geometry with a spacing of twice the current spreading length in the p-type material, which was measured by spatially resolved photocurrent. The LED with the optimal contact geometry exhibits improved performance at high injection current levels thanks to the more uniform carrier distribution across the device area.

  2. A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

    NASA Astrophysics Data System (ADS)

    Musolino, M.; van Treeck, D.; Tahraoui, A.; Scarparo, L.; De Santi, C.; Meneghini, M.; Zanoni, E.; Geelhaar, L.; Riechert, H.

    2016-01-01

    We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. To this end, capacitance deep level transient spectroscopy (DLTS) and temperature-dependent current-voltage (I-V) measurements were performed on a fully processed NW-LED. The DLTS measurements reveal the presence of two distinct electron traps with high concentrations in the depletion region of the p-i-n junction. These band gap states are located at energies of 570 ± 20 and 840 ± 30 meV below the conduction band minimum. The physical origin of these deep level states is discussed. The temperature-dependent I-V characteristics, acquired between 83 and 403 K, show that different conduction mechanisms cause the observed leakage current. On the basis of all these results, we developed a quantitative physical model for charge transport in the reverse bias regime. By taking into account the mutual interaction of variable range hopping and electron emission from Coulombic trap states, with the latter being described by phonon-assisted tunnelling and the Poole-Frenkel effect, we can model the experimental I-V curves in the entire range of temperatures with a consistent set of parameters. Our model should be applicable to planar GaN-based LEDs as well. Furthermore, possible approaches to decrease the leakage current in NW-LEDs are proposed.

  3. Warm-white light-emitting diode with high color rendering index fabricated by combining trichromatic InGaN emitter with single red phosphor.

    PubMed

    Sheu, Jinn-Kong; Chen, Fu-Bang; Wang, Yen-Chin; Chang, Chih-Chiang; Huang, Shih-Hsien; Liu, Chun-Nan; Lee, Ming-Lun

    2015-04-01

    We present a trichromatic GaN-based light-emitting diode (LED) that emits near-ultraviolet (n-UV) blue and green peaks combined with red phosphor to generate white light with a low correlated color temperature (CCT) and high color rendering index (CRI). The LED structure, blue and green unipolar InGaN/GaN multiple quantum wells (MQWs) stacked with a top p-i-n structure containing an InGaN/GaN MQW emitting n-UV light, was grown epitaxially on a single substrate. The trichromatic LED chips feature a vertical conduction structure on a silicon substrate fabricated through wafer bonding and laser lift-off techniques. The blue and green InGaN/GaN MQWs were pumped with n-UV light to re-emit low-energy photons when the LEDs were electrically driven with a forward current. The emission spectrum included three peaks at approximately 405, 468, and 537 nm. Furthermore, the trichromatic LED chips were combined with red phosphor to generate white light with a CCT and CRI of approximately 2900 and 92, respectively. PMID:25968789

  4. Checker Takes the Guesswork out of Diode Identification

    ERIC Educational Resources Information Center

    Harman, Charles

    2011-01-01

    At technical colleges and secondary-level tech schools, students enrolled in basic electronics labs who have learned about diodes that do rectification are used to seeing power diodes like the 1N4001. When the students are introduced to low-power zener diodes and signal diodes, component identification gets more complex. If the small zeners are…

  5. Diode lasers: From laboratory to industry

    NASA Astrophysics Data System (ADS)

    Nasim, Hira; Jamil, Yasir

    2014-03-01

    The invention of first laser in 1960 triggered the discovery of several new families of lasers. A rich interplay of different lasing materials resulted in a far better understanding of the phenomena particularly linked with atomic and molecular spectroscopy. Diode lasers have gone through tremendous developments on the forefront of applied physics that have shown novel ways to the researchers. Some interesting attributes of the diode lasers like cost effectiveness, miniature size, high reliability and relative simplicity of use make them good candidates for utilization in various practical applications. Diode lasers are being used by a variety of professionals and in several spectroscopic techniques covering many areas of pure and applied sciences. Diode lasers have revolutionized many fields like optical communication industry, medical science, trace gas monitoring, studies related to biology, analytical chemistry including elemental analysis, war fare studies etc. In this paper the diode laser based technologies and measurement techniques ranging from laboratory research to automated field and industry have been reviewed. The application specific developments of diode lasers and various methods of their utilization particularly during the last decade are discussed comprehensively. A detailed snapshot of the current state of the art diode laser applications is given along with a detailed discussion on the upcoming challenges.

  6. Ion Diode Experiments on PBFA-X

    NASA Astrophysics Data System (ADS)

    Lockner, Thomas

    1996-05-01

    The PBFA-II pulsed power accelerator at Sandia National Laboratories has been modified to replace the radially focusing ion diode with an extraction ion diode. In the extraction diode mode (PBFA X) the ion beam is generated on the surface of an annular disk and extracted along the cylindrical axis. An additional magnetically insulated transmission line (MITL) has been installed to transmit power from the center to the bottom of the accelerator, where it drives a magnetically insulated extraction ion diode. The modification increases access to the diode and the diagnostics, permitting a higher shot rate, and allows us to study extraction diode technology at a power level near what is required for a high yield facility. The modification also includes reversing the polarity of the top half of the accelerator to permit operation at twice the previous source voltage. In the new configuration the diode could operate at 15 MV and 0.8 MA. This operating point is near the 30 MV, 1.0 MA operating point envisioned for one module of a high yield facility, and will allow the study of intense extraction ion diodes at power levels relevant to such a facility. Experimental results will be presented including MITL coupling studies, beam current density control, discharge cleaning of diode surfaces to reduce the presence of contaminant ions in the source beam, and the effect of anode substrate materials on the purity of the lithium beam. A comparison between predicted and measured radial beam profiles will also be presented, with the predicted profiles obtained from the ATHETA code that solves magnetostatics problems in two dimensions. This work was supported by the US/DOE under contract No. DE-AC04-94AL85000. +In collaboration with R. S. Coats, M. E. Cuneo, M. P. Desjarlias, D. J. Johnson, T. A. Mehlhorn, C. W. Mendel, Jr., P. Menge#, and W. J. Poukey,

  7. Quantum Dot Light Emitting Diode

    SciTech Connect

    Kahen, Keith

    2008-07-31

    The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m{sup 2}, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

  8. Quantum Dot Light Emitting Diode

    SciTech Connect

    Keith Kahen

    2008-07-31

    The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m2, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

  9. A Portable Diode Array Spectrophotometer.

    PubMed

    Stephenson, David

    2016-05-01

    A cheap portable visible light spectrometer is presented. The spectrometer uses readily sourced items and could be constructed by anyone with a knowledge of electronics. The spectrometer covers the wavelength range 450-725 nm with a resolution better than 5 nm. The spectrometer uses a diffraction grating to separate wavelengths, which are detected using a 128-element diode array, the output of which is analyzed using a microprocessor. The spectrum is displayed on a small liquid crystal display screen and can be saved to a micro SD card for later analysis. Battery life (2 × AAA) is estimated to be 200 hours. The overall dimensions of the unit are 120 × 65 × 60 mm, and it weighs about 200 g. PMID:27036399

  10. Bilayer avalanche spin-diode logic

    SciTech Connect

    Friedman, Joseph S. Querlioz, Damien; Fadel, Eric R.; Wessels, Bruce W.; Sahakian, Alan V.

    2015-11-15

    A novel spintronic computing paradigm is proposed and analyzed in which InSb p-n bilayer avalanche spin-diodes are cascaded to efficiently perform complex logic operations. This spin-diode logic family uses control wires to generate magnetic fields that modulate the resistance of the spin-diodes, and currents through these devices control the resistance of cascaded devices. Electromagnetic simulations are performed to demonstrate the cascading mechanism, and guidelines are provided for the development of this innovative computing technology. This cascading scheme permits compact logic circuits with switching speeds determined by electromagnetic wave propagation rather than electron motion, enabling high-performance spintronic computing.

  11. Corrosion of SA1388-1 diodes

    SciTech Connect

    Krska, C.; Stimetz, C.; Braithwaite, J.; Sorensen, R.; Hlava, P.

    1996-06-01

    After 5 y storage at Allied Signal, a subassembly with SA1388-1 diodes failed testing and the cause was an unacceptable current leak rate in one of the diodes. This was traced to a CuS deposit in a single production lot of diodes; however only about 0.3% failed the specification. A study was performed to determine the cause and potential long-term significance of this problem. Probable cause was determined to be the P-bearing braze material not being compatible with the Ag immersion plating solution (cyanide-based) and to the storage environment containing sulfur.

  12. Improved Thermoelectrically Cooled Laser-Diode Assemblies

    NASA Technical Reports Server (NTRS)

    Glesne, Thomas R.; Schwemmer, Geary K.; Famiglietti, Joe

    1994-01-01

    Cooling decreases wavelength and increases efficiency and lifetime. Two improved thermoelectrically cooled laser-diode assemblies incorporate commercial laser diodes providing combination of both high wavelength stability and broad wavelength tuning which are broadly tunable, highly stable devices for injection seeding of pulsed, high-power tunable alexandrite lasers used in lidar remote sensing of water vapor at wavelengths in vicinity of 727 nanometers. Provide temperature control needed to take advantage of tunability of commercial AlGaAs laser diodes in present injection-seeding application.

  13. Bilayer avalanche spin-diode logic

    NASA Astrophysics Data System (ADS)

    Friedman, Joseph S.; Fadel, Eric R.; Wessels, Bruce W.; Querlioz, Damien; Sahakian, Alan V.

    2015-11-01

    A novel spintronic computing paradigm is proposed and analyzed in which InSb p-n bilayer avalanche spin-diodes are cascaded to efficiently perform complex logic operations. This spin-diode logic family uses control wires to generate magnetic fields that modulate the resistance of the spin-diodes, and currents through these devices control the resistance of cascaded devices. Electromagnetic simulations are performed to demonstrate the cascading mechanism, and guidelines are provided for the development of this innovative computing technology. This cascading scheme permits compact logic circuits with switching speeds determined by electromagnetic wave propagation rather than electron motion, enabling high-performance spintronic computing.

  14. Arbitrary waveform generator to improve laser diode driver performance

    SciTech Connect

    Fulkerson, Jr, Edward Steven

    2015-11-03

    An arbitrary waveform generator modifies the input signal to a laser diode driver circuit in order to reduce the overshoot/undershoot and provide a "flat-top" signal to the laser diode driver circuit. The input signal is modified based on the original received signal and the feedback from the laser diode by measuring the actual current flowing in the laser diode after the original signal is applied to the laser diode.

  15. Performance of the cold powered diodes and diode leads in the main magnets of the LHC

    NASA Astrophysics Data System (ADS)

    Willering, G. P.; Giloux, C.; Bajko, M.; Bednarek, M.; Bottura, L.; Charifoulline, Z.; Dahlerup-Petersen, K.; Dib, G.; D'Angelo, G.; Gharib, A.; Grand-Clement, L.; Izquierdo Bermudez, S.; Prin, H.; Roger, V.; Rowan, S.; Savary, F.; Tock, J.-Ph; Verweij, A.

    2015-12-01

    During quench tests in 2011 variations in resistance of an order of magnitude were found in the diode by-pass circuit of the main LHC magnets. An investigation campaign was started to understand the source, the occurrence and the impact of the high resistances. Many tests were performed offline in the SM18 test facility with a focus on the contact resistance of the diode to heat sink contact and the diode wafer temperature. In 2014 the performance of the diodes and diode leads of the main dipole bypass systems in the LHC was assessed during a high current qualification test. In the test a current cycle similar to a magnet circuit discharge from 11 kA with a time constant of 100 s was performed. Resistances of up to 600 μΩ have been found in the diode leads at intermediate current, but in general the high resistances decrease at higher current levels and no sign of overheating of diodes has been seen and the bypass circuit passed the test. In this report the performance of the diodes and in particular the contact resistances in the diode leads are analysed with available data acquired over more than 10 years from acceptance test until the main dipole training campaign in the LHC in 2015.

  16. Microwave diode amplifiers with low intermodulation distortion

    NASA Technical Reports Server (NTRS)

    Cooper, H. W.; Cohn, M.; Buck, D. C.

    1975-01-01

    Distortions can be greatly reduced in narrow-band applications by using the second harmonic. The ac behavior of simplified diode amplifier has negative resistance depending on slope of equivalent I-V curve.

  17. Diode Lasers and Practical Trace Analysis.

    ERIC Educational Resources Information Center

    Imasaka, Totaro; Nobuhiko, Ishibashi

    1990-01-01

    Applications of lasers to molecular absorption spectrometry, molecular fluorescence spectrometry, visible semiconductor fluorometry, atomic absorption spectrometry, and atomic fluorescence spectrometry are discussed. Details of the use of the frequency-doubled diode laser are provided. (CW)

  18. Analysis of phased-array diode lasers

    SciTech Connect

    Hardy, A.; Streifer, W.

    1985-07-01

    An improved, more accurate analysis of phased-array diode lasers is presented, which yields results that differ both qualitatively and quantitatively from those previously employed. A numerical example indicating decreased splitting in array mode gains is included.

  19. Diode laser (980nm) cartilage reshaping

    NASA Astrophysics Data System (ADS)

    El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

    2011-03-01

    Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

  20. Nanofluidic diode in a suspended nanoparticle crystal

    NASA Astrophysics Data System (ADS)

    Lei, Yinhua; Wang, Wei; Wu, Wengang; Li, Zhihong

    2010-06-01

    This work demonstrates a nanofluidic diode in a suspended nanoparticle crystal (S-NPC) constructed by sequentially packing hydroxyl-modified and amino-modified nanoparticles into a microfabricated silicon micropore. Current rectification in this nanofluidic diode comes from the asymmetric surface charge polarities along the nanochannel network inside the nanoparticle crystal. The maximum current rectification ratio was about 48 for the 173 nm S-NPC nanofluidic diode and the maximum forward current was larger than 700 nA at 3 V bias. Since it is inexpensive, easy to manufacture, and the surface charge properties are easily formed, having excellent electrical performance, this S-NPC nanofluidic diode holds application for biosensors.

  1. Blood sugar monitoring with laser diode

    NASA Astrophysics Data System (ADS)

    Zhang, Xiqin; Chen, Jianhong; Yeo, Joon Hock

    2006-09-01

    In this paper, the non-invasive measurement of blood sugar level was studied by use of near infrared laser diode. The in-vivo experiments were carried out using laser diodes with wavelength 1625nm and 1650nm. Several volunteers were tested before and after drinking glucose solution. We took blood from a fingertip and measured its concentration with a glucose meter while taking signal voltage from laser diode system. The signal voltage was processed by using a computer and blood absorption was obtained. The results show that blood sugar level and blood absorption have similar trends before and after drinking glucose solution. We also compared the trends of drinking glucose solution and pure water and the results show that the difference of blood absorption is obvious. From the results we can see that laser diode is suitable for blood glucose monitoring.

  2. Advanced laser diodes for sensing applications

    SciTech Connect

    VAWTER,GREGORY A.; MAR,ALAN; CHOW,WENG W.; ALLERMAN,ANDREW A.

    2000-01-01

    The authors have developed diode lasers for short pulse duration and high peak pulse power in the 0.01--100.0 m pulsewidth regime. A primary goal of the program was producing up to 10 W while maintaining good far-field beam quality and ease of manufacturability for low cost. High peak power, 17 W, picosecond pulses have been achieved by gain switching of flared geometry waveguide lasers and amplifiers. Such high powers area world record for this type of diode laser. The light emission pattern from diode lasers is of critical importance for sensing systems such as range finding and chemical detection. They have developed a new integrated optical beam transformer producing rib-waveguide diode lasers with a symmetric, low divergence, output beam and increased upper power limits for irreversible facet damage.

  3. Schottky barrier diode and method thereof

    NASA Technical Reports Server (NTRS)

    Aslam, Shahid (Inventor); Franz, David (Inventor)

    2008-01-01

    Pt/n.sup.-GaN Schottky barrier diodes are disclosed that are particularly suited to serve as ultra-violet sensors operating at wavelengths below 200 nm. The Pt/n.sup.-GaN Schottky barrier diodes have very large active areas, up to 1 cm.sup.2, which exhibit extremely low leakage current at low reverse biases. Very large area Pt/n.sup.-GaN Schottky diodes of sizes 0.25 cm.sup.2 and 1 cm.sup.2 have been fabricated from n.sup.-/n.sup.+ GaN epitaxial layers grown by vapor phase epitaxy on single crystal c-plane sapphire, which showed leakage currents of 14 pA and 2.7 nA, respectively for the 0.25 cm.sup.2 and 1 cm.sup.2 diodes both configured at a 0.5V reverse bias.

  4. Impedance characteristics of terawatt ion diodes

    NASA Astrophysics Data System (ADS)

    Mendel, C. W., Jr.; Desjarlais, M. P.; Pointon, T. D.; Quintenz, J. P.; Rosenthal, S. E.; Seidel, D. B.; Slutz, S. A.

    Light ion fusion research has developed ion diodes that have unique properties when compared to other ion diodes. These diodes involve relativistic electrons, ion beam stagnation pressures that compress the magnetic field to the order of 10 Tesla, and large space charge and particle current effects throughout the accelerating region. These diodes have required new theories and models to account for effects that previously were unimportant. One of the most important effects of the magnetic field compression and large space charge has been impedance collapse. The impedance collapse can lead to poor energy transfer efficiency, beam debunching, and rapid change of the beam focus. The current understanding of these effects is discussed including some of the methods used to ameliorate them, and the future directions the theory and modeling will take.

  5. Stacked switchable element and diode combination

    DOEpatents

    Branz, Howard M.; Wang, Qi

    2006-06-27

    A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship so that the semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a forming voltage to the switchable element (14).

  6. Stacked Switchable Element and Diode Combination

    DOEpatents

    Branz, H. M.; Wang, Q.

    2006-06-27

    A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship so that the semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a forming voltage to the switchable element (14).

  7. Bypass diode for a solar cell

    DOEpatents

    Rim, Seung Bum; Kim, Taeseok; Smith, David D.; Cousins, Peter J.

    2012-03-13

    Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.

  8. Impedance characteristics of multistage ion diodes

    SciTech Connect

    Desjarlais, M.

    1994-09-01

    We further develop a theory of multistage diodes that includes the possibility of emission of ions in the final stage. The exact solutions are extremely cumbersome and are not practical for most applications. We have developed approximate solutions that are very accurate, require no integrations, and may be rapidly calculated using a simple iterative scheme. These solutions for the total current as a function of voltage are used in time-dependent modeling of a two-stage diode.

  9. Organic Schottky diode: Characterization of traps

    NASA Astrophysics Data System (ADS)

    Rani, Varsha; Yadav, Sarita; Ghosh, Subhasis

    2015-06-01

    We have demonstrated the formation and characterization of Schottky junction in metal/organic/metal sandwiched devices based on organic molecular semiconductors, using current-voltage (J-V) and capacitance-voltage (C-V) characteristics, in particular how traps affect the device performance. Ideality factor of organic Schottky diode is always greater than unity and increases with decreasing the temperature. Diffusion coefficient has been determined from current density -voltage characteristic in Schottky diodes.

  10. Phase Noise Reduction of Laser Diode

    NASA Technical Reports Server (NTRS)

    Zhang, T. C.; Poizat, J.-Ph.; Grelu, P.; Roch, J.-F.; Grangier, P.; Marin, F.; Bramati, A.; Jost, V.; Levenson, M. D.; Giacobino, E.

    1996-01-01

    Phase noise of single mode laser diodes, either free-running or using line narrowing technique at room temperature, namely injection-locking, has been investigated. It is shown that free-running diodes exhibit very large excess phase noise, typically more than 80 dB above shot-noise at 10 MHz, which can be significantly reduced by the above-mentioned technique.

  11. Performance measurements of hybrid PIN diode arrays

    SciTech Connect

    Shapiro, S.L. ); Arens, J.F.; Jernigan, J.G. . Space Sciences Lab.); Kramer, G. ); Collins, T.; Worley, S. ); Wilburn, C.D. ); Skubic, P. )

    1990-10-01

    We report the successful development of hybrid PIN diode arrays and a series of room-temperature measurements in a high-energy pion beam at FNAL. A PMOS VLSI 256 {times} 256 readout array having 30 {mu}m square pixels was indium-bump bonded to a mating PIN diode detector array. Preliminary measurements on the resulting hybrid show excellent signal-to-noise at room temperature. 3 refs., 5 figs.

  12. Varactor diodes for millimeter and submillimeter wavelengths

    NASA Technical Reports Server (NTRS)

    Rizzi, Brian J.; Hesler, Jeffrey L.; Dossal, Hasan; Crowe, Thomas W.

    1992-01-01

    Whisker-contacted GaAs Schottky barrier varactor diodes are the most common high-frequency multiplier element in use today. They are inherently simple devices that have very high frequency response and have been used to supply local oscillator power for Schottky heterodyne receivers to frequencies approaching 700 GHz. This paper discusses the development of improved varactor diode technology for space based applications at millimeter and submillimeter wavelengths.

  13. Solder joint reliability in alternator power diode assemblies

    SciTech Connect

    Pan, T.Y.; White, S.C.; Lutz, E.L.; Blair, H.D.; Nicholson, J.M.

    1999-11-01

    Power diodes in an alternator convert alternating current, generated by the spinning magnetic field, to direct current to be used by the battery and all the automotive electrical/electronic components. The diodes are press-fit into aluminum heatsinks to quickly and efficiently dissipate the heat from the silicon dies in the diode body. The diodes are soldered to a rectifier circuit board through the diode leads by a wave soldering process using a Pb-free, eutectic Sn-3.5Ag solder. A set of positive diodes reside on a different substrate than the set of negative diodes, resulting in differences in the lengths of the diode leads. The distance from the diode body to the solder joint on the leads of the positive diodes is 7 mm less than those of the negative diodes. Solderability, cross-section micrographs, and thermal-cycling fatigue reliability studies were compared between the positive and negative diodes and between diode designs from different suppliers. Wetting balance testing showed significant differences in solderability between positive and negative diodes and between the two different diode designs. Combining the diode body and lead together had a more drastic effect on the solderability than the lead alone. It was discovered that, although the nature of the diode design is to dissipate the heat away from the diode quickly and efficiently, there is a large temperature gradient along the lead immediately above the solder bath which can be as much as 100 C just 2 mm from the bath. This large temperature gradient caused some leads to be too cold to form good solder fillets. The solder fillets obtained in the laboratory wetting tests matched those observed in the actual alternators. The inadequate solder fillets resulted in a 250% difference in the thermal cycling fatigue reliability between the two diode designs.

  14. SiC-Based Schottky Diode Gas Sensors

    NASA Technical Reports Server (NTRS)

    Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai

    1997-01-01

    Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

  15. Study of the Staebler-Wronski degradation effect in a-Si:H based p-i-n solar cell

    NASA Astrophysics Data System (ADS)

    Naseem, H. A.; Brown, W. D.; Ang, S. S.

    1993-05-01

    Conversion of solar energy into electricity using environmentally safe and clean photovoltaic methods to supplement the ever increasing energy needs has been a cherished goal of many scientists and engineers around the world. Photovoltaic solar cells on the other hand, have been the power source for satellites ever since their introduction in the early sixties. For widespread terrestrial applications, however, the cost of photovoltaic systems must be reduced considerably. Much progress has been made in the recent past towards developing economically viable terrestrial systems, and the future looks highly promising. Thin film solar cells offer cost reductions mainly from their low processing cost, low material cost, and choice of low cost substrates. These are also very attractive for space applications because of their high power densities (power produced per kilogram of solar cell pay load) and high radiation resistance. Amorphous silicon based solar cells are amongst the top candidates for economically viable terrestrial and space based power generation. Despite very low federal funding during the eighties, amorphous silicon solar cell efficiencies have continually been improved - from a low 3 percent to over 13 percent now. Further improvements have been made by the use of multi-junction tandem solar cells. Efficiencies close to 15 percent have been achieved in several labs. In order to be competitive with fossil fuel generated electricity, it is believed that module efficiency of 15 percent or cell efficiency of 20 percent is required. Thus, further improvements in cell performance is imperative. One major problem that was discovered almost 15 years ago in amorphous silicon devices is the well known Staebler-Wronski Effect. Efficiency of amorphous silicon solar cells was found to degrade upon exposure to sunlight. Until now their is no consensus among the scientists on the mechanism for this degradation. Efficiency may degrade anywhere from 10 percent to almost 50 percent within the first few months of operation. In order to improve solar cell efficiencies, it is clear that the cause or causes of such degradation must be found and the processing conditions altered to minimize the loss in efficiency. This project was initiated in 1987 to investigate a possible link between metallic impurities, in particular, Ag, and this degradation.

  16. Study of the Staebler-Wronski degradation effect in a-Si:H based p-i-n solar cell

    NASA Technical Reports Server (NTRS)

    Naseem, H. A.; Brown, W. D.; Ang, S. S.

    1993-01-01

    Conversion of solar energy into electricity using environmentally safe and clean photovoltaic methods to supplement the ever increasing energy needs has been a cherished goal of many scientists and engineers around the world. Photovoltaic solar cells on the other hand, have been the power source for satellites ever since their introduction in the early sixties. For widespread terrestrial applications, however, the cost of photovoltaic systems must be reduced considerably. Much progress has been made in the recent past towards developing economically viable terrestrial systems, and the future looks highly promising. Thin film solar cells offer cost reductions mainly from their low processing cost, low material cost, and choice of low cost substrates. These are also very attractive for space applications because of their high power densities (power produced per kilogram of solar cell pay load) and high radiation resistance. Amorphous silicon based solar cells are amongst the top candidates for economically viable terrestrial and space based power generation. Despite very low federal funding during the eighties, amorphous silicon solar cell efficiencies have continually been improved - from a low 3 percent to over 13 percent now. Further improvements have been made by the use of multi-junction tandem solar cells. Efficiencies close to 15 percent have been achieved in several labs. In order to be competitive with fossil fuel generated electricity, it is believed that module efficiency of 15 percent or cell efficiency of 20 percent is required. Thus, further improvements in cell performance is imperative. One major problem that was discovered almost 15 years ago in amorphous silicon devices is the well known Staebler-Wronski Effect. Efficiency of amorphous silicon solar cells was found to degrade upon exposure to sunlight. Until now their is no consensus among the scientists on the mechanism for this degradation. Efficiency may degrade anywhere from 10 percent to almost 50 percent within the first few months of operation. In order to improve solar cell efficiencies, it is clear that the cause or causes of such degradation must be found and the processing conditions altered to minimize the loss in efficiency. This project was initiated in 1987 to investigate a possible link between metallic impurities, in particular, Ag, and this degradation. Such a link was established by one of the NASA scientists for the light induced degradation of n+/p crystalline silicon solar cells.

  17. Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current

    NASA Astrophysics Data System (ADS)

    Sukrittanon, Supanee; Liu, Ren; Breeden, Michael C.; Pan, Janet L.; Jungjohann, K. L.; Tu, Charles W.; Dayeh, Shadi A.

    2016-08-01

    We report the demonstration of dilute nitride heterostructure core/shell microwire solar cells utilizing the combination of top-down reactive-ion etching to create the cores (GaP) and molecular beam epitaxy to create the shells (GaNP). Systematic studies of cell performance over a series of microwire lengths, array periods, and microwire sidewall morphologies examined by transmission electron microscopy were conducted to shed light on performance-limiting factors and to optimize the cell efficiency. We show by microscopy and correlated external quantum efficiency characterization that the open circuit voltage is degraded primarily due to the presence of defects at the GaP/GaNP interface and in the GaNP shells, and is not limited by surface recombination. Compared to thin film solar cells in the same growth run, the microwire solar cells exhibit greater short circuit current but poorer open circuit voltage due to greater light absorption and number of defects in the microwire structure, respectively. The comprehensive understanding presented in this work suggests that performance benefits of dilute nitride microwire solar cells can be achieved by further tuning of the epitaxial quality of the underlying materials.

  18. Percutaneous diode laser disc nucleoplasty

    NASA Astrophysics Data System (ADS)

    Menchetti, P. P.; Longo, Leonardo

    2004-09-01

    The treatment of herniated disc disease (HNP) over the years involved different miniinvasive surgical options. The classical microsurgical approach has been substituted over the years both by endoscopic approach in which is possible to practice via endoscopy a laser thermo-discoplasty, both by percutaneous laser disc nucleoplasty. In the last ten years, the percutaneous laser disc nucleoplasty have been done worldwide in more than 40000 cases of HNP. Because water is the major component of the intervertebral disc, and in HNP pain is caused by the disc protrusion pressing against the nerve root, a 980 nm Diode laser introduced via a 22G needle under X-ray guidance and local anesthesia, vaporizes a small amount of nucleous polposus with a disc shrinkage and a relief of pressure on nerve root. Most patients get off the table pain free and are back to work in 5 to 7 days. Material and method: to date, 130 patients (155 cases) suffering for relevant symptoms therapy-resistant 6 months on average before consulting our department, have been treated. Eightyfour (72%) males and 46 (28%) females had a percutaneous laser disc nucleoplasty. The average age of patients operated was 48 years (22 - 69). The level of disc removal was L3/L4 in 12 cases, L4/L5 in 87 cases and L5/S1 in 56 cases. Two different levels were treated at the same time in 25 patients. Results: the success rate at a minimum follow-up of 6 months was 88% with a complication rate of 0.5%.

  19. Diode-pumped laser altimeter

    NASA Technical Reports Server (NTRS)

    Welford, D.; Isyanova, Y.

    1993-01-01

    TEM(sub 00)-mode output energies up to 22.5 mJ with 23 percent slope efficiencies were generated at 1.064 microns in a diode-laser pumped Nd:YAG laser using a transverse-pumping geometry. 1.32-micron performance was equally impressive at 10.2 mJ output energy with 15 percent slope efficiency. The same pumping geometry was successfully carried forward to several complex Q-switched laser resonator designs with no noticeable degradation of beam quality. Output beam profiles were consistently shown to have greater than 90 percent correlation with the ideal TEM(sub 00)-order Gaussian profile. A comparison study on pulse-reflection-mode (PRM), pulse-transmission-mode (PTM), and passive Q-switching techniques was undertaken. The PRM Q-switched laser generated 8.3 mJ pulses with durations as short as 10 ns. The PTM Q-switch laser generated 5 mJ pulses with durations as short as 5 ns. The passively Q-switched laser generated 5 mJ pulses with durations as short as 2.4 ns. Frequency doubling of both 1.064 microns and 1.32 microns with conversion efficiencies of 56 percent in lithium triborate and 10 percent in rubidium titanyl arsenate, respectively, was shown. Sum-frequency generation of the 1.064 microns and 1.32 microns radiations was demonstrated in KTP to generate 1.1 mJ of 0.589 micron output with 11.5 percent conversion efficiency.

  20. Destructive Single-Event Failures in Schottky Diodes

    NASA Technical Reports Server (NTRS)

    Casey, Megan C.; Lauenstein, Jean-Marie; Gigliuto, Robert A.; Wilcox, Edward P.; Phan, Anthony M.; Kim, Hak; Chen, Dakai; LaBel, Kenneth A.

    2014-01-01

    This presentation contains test results for destructive failures in DC-DC converters. We have shown that Schottky diodes are susceptible to destructive single-event effects. Future work will be completed to identify parameter that determines diode susceptibility.

  1. Efficient millimeter wave 1140 GHz/ diode for harmonic power generation

    NASA Technical Reports Server (NTRS)

    1967-01-01

    Epitaxial gallium arsenide diode junction formed in a crossed waveguide structure operates as a variable reactance harmonic generator. This varactor diode can generate power efficiently in the low-millimeter wavelength.

  2. Planar Jumping-Drop Thermal Diodes

    NASA Astrophysics Data System (ADS)

    Boreyko, Jonathan; Zhao, Yuejun; Chen, Chuan-Hua

    2011-11-01

    Phase-change thermal diodes transport heat asymmetrically with a large rectification coefficient unmatched by their solid-state counterparts, but are limited by either the gravitational orientation or one-dimensional configuration. We report a planar phase-change diode scalable to large areas with an orientation-independent diodicity of up to 100, in which water/vapor is enclosed by parallel superhydrophobic and superhydrophilic plates. The thermal rectification is enabled by spontaneously jumping dropwise condensate which only occurs when the superhydrophobic surface is colder than the superhydrophilic surface. Our jumping-drop thermal diode is expected to be particularly useful for the thermal protection of planar electronic components and the thermal regulation of large-area energy harvesting systems.

  3. Picosecond pulsed diode ring laser gyroscope

    SciTech Connect

    Rosker, M.J.; Christian, W.R.; McMichael, I.C.

    1994-12-31

    An external ring cavity containing as its active medium a pair of InGaAsP diodes is modelocked to produce picosecond pulses. In such a laser, a small frequency difference proportional to the nonreciprocal phase shift (resulting from, e.g., the Sagnac effect) can be observed by beating together the counter propagating laser arms; the device therefore acts as a rotating sensor. In contrast to a conventional (cw) ring laser gyroscope, the pulsed gyroscope can avoid gain competition, thereby enabling the use of homogeneously broadened gain media like semiconductor diodes. Temporal separation of the pulses within the cavity also discriminates against frequency locking of the lasers. The picosecond pulsed diode ring laser gyroscope is reviewed. Both active and passive modelocking are discussed.

  4. Diode laser photocoagulation for diabetic macular oedema.

    PubMed Central

    Ulbig, M W; McHugh, D A; Hamilton, A M

    1995-01-01

    AIMS--This study aimed to investigate whether diode laser irradiation, which is poorly absorbed by haemoglobin, can induce closure of leaking retinal microvascular lesions in the treatment of diabetic macular oedema. METHODS--Thirty three eyes with clinically significant diabetic macular oedema were treated with a diode laser. Fundus evaluation before and after treatment included visual acuity, stereoscopic biomicroscopy, colour photographs, and fluorescein angiography. RESULTS--At a mean period of review of 6 months macular oedema had completely or partially resolved in 27 eyes. Visual acuity improved in three, deteriorated in one, and was unchanged in 29 eyes. CONCLUSION--Preliminary data suggest that diode laser therapy induces closure of leaking retinal microaneurysms and is effective in the treatment of diabetic macular oedema. Images PMID:7742274

  5. Diode-quad bridge circuit means

    NASA Technical Reports Server (NTRS)

    Harrison, D. R.; Dimeff, J. (Inventor)

    1975-01-01

    Diode-quad bridge circuit means is described for use as a transducer circuit or as a discriminator circuit. It includes: (1) a diode bridge having first, second, third, and fourth bridge terminals consecutively coupled together by four diodes polarized in circulating relationship; (2) a first impedance connected between the second bridge terminal and a circuit ground; (3) a second impedance connected between the fourth bridge terminal and the circuit ground; (4) a signal source having a first source terminal capacitively coupled to the first and third bridge terminals, and a second source terminal connected to the circuit ground; and (5) an output terminal coupled to the first bridge terminal and at which an output signal may be taken.

  6. Blue-emitting external cavity laser diode

    NASA Astrophysics Data System (ADS)

    Na, Hong Man; Song, Hong Joo; Park, Jong Hwan; Lee, Jun Ho; Park, Jung Ho

    2016-03-01

    An front facet anti-reflection coated solitary laser diode is operated in the external cavity diode laser (ECDL). For wavelength stabilization and narrow spectral width, the diffraction grating is used in a Littrow configuration. At an injection current of 280 mA, a output power of 35mW with a slope efficiency of 0.22 W/A and the bandwidth of 80 pm at a wavelength of 457 nm. In this paper, the tunable external cavity diode laser module is designed with an overall size of 18 mm x 24 mm x 14 mm. ECDL showed excellent wavelength locking behavior without a non-shift of the peak wavelength.

  7. Do Aviram-Ratner diodes rectify?

    PubMed

    Stokbro, Kurt; Taylor, Jeremy; Brandbyge, Mads

    2003-04-01

    We present state-of-the-art first principles calculations for the IV characteristics of a donor-insulator-acceptor (DsigmaA) type molecular diode anchored with thiolate bonds to two gold electrodes. We find very poor diode characteristics of the device, and the origin of this is analyzed in terms of the bias-dependent electronic structure. At zero bias, the highest occupied molecular orbital (HOMO) is confined to the D part, and the lowest unoccupied molecular orbital (LUMO) is confined to the A part, while at 3.8 V the two states align, and this gives rise to an increasing current. The latter is a potential mechanism for rectification and may in some cases lead to favorable diode characteristics. We identify the origin of the vanishing rectification for the investigated molecule, and on the basis of this we suggest parameters which are important for successful chemical engineering of DsigmaA rectifiers.

  8. Semiconductor diode characterization for total skin electron irradiation.

    PubMed

    Madrid González, O A; Rivera Montalvo, T

    2014-01-01

    In this paper, a semiconductor diode characterization was performed. The diode characterization was completed using an electron beam with 4 MeV of energy. The semiconductor diode calibration used irradiation with an electron beam in an ion chamber. "In vivo" dosimetry was also conducted. The dosimetry results revealed that the semiconductor diode was a good candidate for use in the total skin electron therapy (TSET) treatment control.

  9. Channelized-Coplanar-Waveguide PIN-Diode Switches

    NASA Technical Reports Server (NTRS)

    Ponchak, G. E.; Simons, R. N.

    1992-01-01

    Three positive/intrinsic/negative (PIN-diode) reflective CPW (coplanar waveguide) switches demonstrated. First includes series-mounted diode to bridge gap in center strip conductor of CPW. Second includes pair of diodes to short center strip conductor to ground planes. Third includes diode to switch between band-pass filter and notch filter. Isolation exceeds 20 dB, while insertion loss is less than 1 dB.

  10. Comparative efficiency analysis of GaN-based light-emitting diodes and laser diodes

    NASA Astrophysics Data System (ADS)

    Piprek, Joachim

    2016-07-01

    Nobel laureate Shuji Nakamura predicted in 2014 that GaN-based laser diodes are the future of solid state lighting. However, blue GaN-lasers still exhibit less than 40% wall-plug efficiency, while some GaN-based blue light-emitting diodes exceed 80%. This paper investigates non-thermal reasons behind this difference. The inherently poor hole conductivity of the Mg-doped waveguide cladding layer of laser diodes is identified as main reason for their low electrical-to-optical energy conversion efficiency.

  11. Thermal diode made by nematic liquid crystal

    NASA Astrophysics Data System (ADS)

    Melo, Djair; Fernandes, Ivna; Moraes, Fernando; Fumeron, Sébastien; Pereira, Erms

    2016-09-01

    This work investigates how a thermal diode can be designed from a nematic liquid crystal confined inside a cylindrical capillary. In the case of homeotropic anchoring, a defect structure called escaped radial disclination arises. The asymmetry of such structure causes thermal rectification rates up to 3.5% at room temperature, comparable to thermal diodes made from carbon nanotubes. Sensitivity of the system with respect to the heat power supply, the geometry of the capillary tube and the molecular anchoring angle is also discussed.

  12. Planar jumping-drop thermal diodes

    NASA Astrophysics Data System (ADS)

    Boreyko, Jonathan B.; Zhao, Yuejun; Chen, Chuan-Hua

    2011-12-01

    Phase-change thermal diodes rectify heat transport much more effectively than solid-state ones, but are limited by either the gravitational orientation or one-dimensional configuration. Here, we report a planar phase-change diode scalable to large areas with an orientation-independent diodicity of over 100, in which water/vapor is enclosed by parallel superhydrophobic and superhydrophilic plates. The thermal rectification is enabled by spontaneously jumping dropwise condensate which only occurs when the superhydrophobic surface is colder than the superhydrophilic surface.

  13. Diode amplifier of modulated optical beam power

    SciTech Connect

    D'yachkov, N V; Bogatov, A P; Gushchik, T I; Drakin, A E

    2014-11-30

    Analytical relations are obtained between characteristics of modulated light at the output and input of an optical diode power amplifier operating in the highly saturated gain regime. It is shown that a diode amplifier may act as an amplitude-to-phase modulation converter with a rather large bandwidth (∼10 GHz). The low sensitivity of the output power of the amplifier to the input beam power and its high energy efficiency allow it to be used as a building block of a high-power multielement laser system with coherent summation of a large number of optical beams. (lasers)

  14. Laser diode initiated detonators for space applications

    NASA Technical Reports Server (NTRS)

    Ewick, David W.; Graham, J. A.; Hawley, J. D.

    1993-01-01

    Ensign Bickford Aerospace Company (EBAC) has over ten years of experience in the design and development of laser ordnance systems. Recent efforts have focused on the development of laser diode ordnance systems for space applications. Because the laser initiated detonators contain only insensitive secondary explosives, a high degree of system safety is achieved. Typical performance characteristics of a laser diode initiated detonator are described in this paper, including all-fire level, function time, and output. A finite difference model used at EBAC to predict detonator performance, is described and calculated results are compared to experimental data. Finally, the use of statistically designed experiments to evaluate performance of laser initiated detonators is discussed.

  15. Phase-change radiative thermal diode

    NASA Astrophysics Data System (ADS)

    Ben-Abdallah, Philippe; Biehs, Svend-Age

    2013-11-01

    A thermal diode transports heat mainly in one preferential direction rather than in the opposite direction. This behavior is generally due to the non-linear dependence of certain physical properties with respect to the temperature. Here we introduce a radiative thermal diode which rectifies heat transport thanks to the phase transitions of materials. Rectification coefficients greater than 70% and up to 90% are shown, even for small temperature differences. This result could have important applications in the development of future contactless thermal circuits or in the conception of radiative coatings for thermal management.

  16. An all-silicon passive optical diode.

    PubMed

    Fan, Li; Wang, Jian; Varghese, Leo T; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M; Qi, Minghao

    2012-01-27

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.

  17. Integrated injection-locked semiconductor diode laser

    DOEpatents

    Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

    1991-01-01

    A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.

  18. High power diode pumped alkali vapor lasers

    NASA Astrophysics Data System (ADS)

    Zweiback, J.; Krupke, B.

    2008-05-01

    Diode pumped alkali lasers have developed rapidly since their first demonstration. These lasers offer a path to convert highly efficient, but relatively low brightness, laser diodes into a single high power, high brightness beam. General Atomics has been engaged in the development of DPALs with scalable architectures. We have examined different species and pump characteristics. We show that high absorption can be achieved even when the pump source bandwidth is several times the absorption bandwidth. In addition, we present experimental results for both potassium and rubidium systems pumped with a 0.2 nm bandwidth alexandrite laser. These data show slope efficiencies of 67% and 72% respectively.

  19. Integrated injection-locked semiconductor diode laser

    DOEpatents

    Hadley, G.R.; Hohimer, J.P.; Owyoung, A.

    1991-02-19

    A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet. 18 figures.

  20. Phase-change radiative thermal diode

    SciTech Connect

    Ben-Abdallah, Philippe; Biehs, Svend-Age

    2013-11-04

    A thermal diode transports heat mainly in one preferential direction rather than in the opposite direction. This behavior is generally due to the non-linear dependence of certain physical properties with respect to the temperature. Here we introduce a radiative thermal diode which rectifies heat transport thanks to the phase transitions of materials. Rectification coefficients greater than 70% and up to 90% are shown, even for small temperature differences. This result could have important applications in the development of future contactless thermal circuits or in the conception of radiative coatings for thermal management.

  1. A 640 GHz Planar-Diode Fundamental Mixer/Receiver

    NASA Technical Reports Server (NTRS)

    Siegel, P.; Mehdi, I.; Dengler, R.; Lee, T.; Humphrey, D.; Pease, A.

    1998-01-01

    The design and performance of a 640 GHz solid-state receiver using a fundamental planar-Schottky-diode mixer, InP Gunn diode oscillator, whisker-contacted Schottky-varactor-diode sextupler and folded-Fabry-Perot diplexer are reported.

  2. JAN transistor and diode characterization test program, JANTX diode 1N5619

    NASA Technical Reports Server (NTRS)

    Takeda, H.

    1977-01-01

    A statistical summary of electrical characterization was performed on JANTX 1N5619 silicon diodes. Parameters are presented with test conditions, mean, standard deviation, lowest reading, 10% point, 90% point, and highest reading.

  3. Spin-current diode with a ferromagnetic semiconductor

    SciTech Connect

    Sun, Qing-Feng Xie, X. C.

    2015-05-04

    Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here, we propose a corresponding device in spintronics: the spin-current diode, in which the forward spin current is large but the reversed one is negligible. We show that the lead/ferromagnetic quantum dot/lead system and the lead/ferromagnetic semiconductor/lead junction can work as spin-current diodes. The spin-current diode, a low dissipation device, may have important applications in spintronics, as the conventional charge-current diode does in electronics.

  4. Fast recovery, high voltage silicon diodes for AC motor controllers

    NASA Technical Reports Server (NTRS)

    Balodis, V.; Berman, A. H.; Gaugh, C.

    1982-01-01

    The fabrication and characterization of a high voltage, high current, fast recovery silicon diode for use in AC motor controllers, originally developed for NASA for use in avionics power supplies, is presented. The diode utilizes a positive bevel PIN mesa structure with glass passivation and has the following characteristics: peak inverse voltage - 1200 volts, forward voltage at 50 amperes - 1.5 volts, reverse recovery time of 200 nanoseconds. Characterization data for the diode, included in a table, show agreement with design concepts developed for power diodes. Circuit diagrams of the diode are also given.

  5. Light-Emitting Diodes: Solving Complex Problems

    ERIC Educational Resources Information Center

    Planinšic, Gorazd; Etkina, Eugenia

    2015-01-01

    This is the fourth paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide readers with the description of experiments and the pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper provided…

  6. Light-Emitting Diodes: A Hidden Treasure

    ERIC Educational Resources Information Center

    Planinšic, Gorazd; Etkina, Eugenia

    2014-01-01

    LEDs, or light-emitting diodes, are cheap, easy to purchase, and thus commonly used in physics instruction as indicators of electric current or as sources of light (Fig. 1). In our opinion LEDs represent a unique piece of equipment that can be used to collect experimental evidence, and construct and test new ideas in almost every unit of a general…

  7. Phosphorescent Nanocluster Light-Emitting Diodes.

    PubMed

    Kuttipillai, Padmanaban S; Zhao, Yimu; Traverse, Christopher J; Staples, Richard J; Levine, Benjamin G; Lunt, Richard R

    2016-01-13

    Devices utilizing an entirely new class of earth abundant, inexpensive phosphorescent emitters based on metal-halide nanoclusters are reported. Light-emitting diodes with tunable performance are demonstrated by varying cation substitution to these nanoclusters. Theoretical calculations provide insight about the nature of the phosphorescent emitting states, which involves a strong pseudo-Jahn-Teller distortion.

  8. Determining Extinction Ratio Of A Laser Diode

    NASA Technical Reports Server (NTRS)

    Unger, Glenn L.

    1992-01-01

    Improved technique to determine extinction ratio of pulsed laser diode based partly on definition of extinction ratio applicable to nonideal laser pulses. Heretofore, determinations involved assumption of ideal laser pulses, and neglected optical power from background light. Because power fluctuates during real pulse, more realistic to define extinction ratio in terms of energy obtained.

  9. Diode laser saturation spectroscopy of NH3

    NASA Technical Reports Server (NTRS)

    Jennings, D. E.

    1978-01-01

    Saturation of molecular transitions using a tuneable diode laser was demonstrated for the first time using a standing-wave cavity configuration with an f/8 beam focussed at the sample. Observed saturation effects in NH3 transitions near 888/cm include sub-Doppler (Lamb-dip) resonances at line center.

  10. Phosphorescent Nanocluster Light-Emitting Diodes.

    PubMed

    Kuttipillai, Padmanaban S; Zhao, Yimu; Traverse, Christopher J; Staples, Richard J; Levine, Benjamin G; Lunt, Richard R

    2016-01-13

    Devices utilizing an entirely new class of earth abundant, inexpensive phosphorescent emitters based on metal-halide nanoclusters are reported. Light-emitting diodes with tunable performance are demonstrated by varying cation substitution to these nanoclusters. Theoretical calculations provide insight about the nature of the phosphorescent emitting states, which involves a strong pseudo-Jahn-Teller distortion. PMID:26568044

  11. The Fuge Tube Diode Array Spectrophotometer

    ERIC Educational Resources Information Center

    Arneson, B. T.; Long, S. R.; Stewart, K. K.; Lagowski, J. J.

    2008-01-01

    We present the details for adapting a diode array UV-vis spectrophotometer to incorporate the use of polypropylene microcentrifuge tubes--fuge tubes--as cuvettes. Optical data are presented validating that the polyethylene fuge tubes are equivalent to the standard square cross section polystyrene or glass cuvettes generally used in…

  12. Light-Emitting Diodes: Learning New Physics

    ERIC Educational Resources Information Center

    Planinšic, Gorazd; Etkina, Eugenia

    2015-01-01

    This is the third paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide the readers with the description of experiments and pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper, published…

  13. Bioinspired Hybrid White Light-Emitting Diodes.

    PubMed

    Weber, Michael D; Niklaus, Lukas; Pröschel, Marlene; Coto, Pedro B; Sonnewald, Uwe; Costa, Rubén D

    2015-10-01

    The first bioinspired hybrid white-light-emitting diodes (bio-HLEDs) featuring protein cascade coatings are presented. For easy fabrication a new strategy to stabilize proteins in rubber-like material was developed. The synergy between the excellent features of fluorescent proteins and the easily processed rubber produces bio-HLEDs with less than 10% loss in luminous efficiency over 100 hours.

  14. Noninvasive blood glucose monitoring with laser diode

    NASA Astrophysics Data System (ADS)

    Zhang, Xiqin; Chen, Jianhong; Ooi, Ean Tat; Yeo, Joon Hock

    2006-02-01

    The non-invasive measurement of blood sugar level was studied by use of near infrared laser diodes. The in vitro and in vivo experiments were carried out using six laser diodes having wavelengths range from 1550 nm to 1750nm. Several volunteers were tested for OGTT (Oral Glucose Tolerance Test) experiment. We took blood from a fingertip and measured its concentration with a glucose meter while taking signal voltage from laser diodes system. The data of signal voltage were processed to do calibration and prediction; in this paper PLS (Partial Least Square) method was used to do modeling. For in vitro experiment, good linear relationship between predicted glucose concentration and real glucose concentration was obtained. For in vivo experiments, we got the blood sugar level distributions in Clarke error grid that is a reference for doctors to do diagnosis and treatment. In the Clarke error grid, 75% of all data was in area A and 25 % was in area B. From the in vitro and in vivo results we know that multiple laser diodes are suitable for non-invasive blood glucose monitoring.

  15. Entangled Light Emission From a Diode

    SciTech Connect

    Stevenson, R. M.; Shields, A. J.; Salter, C. L.; Farrer, I.; Nicoll, C. A.; Ritchie, D. A.

    2011-12-23

    Electrically-driven entangled photon generation is demonstrated for the first time using a single semiconductor quantum dot embedded in a light emitting diode structure. The entanglement fidelity is shown to be of sufficient quality for applications such as quantum key distribution.

  16. A CW Gunn Diode Switching Element.

    ERIC Educational Resources Information Center

    Hurtado, Marco; Rosenbaum, Fred J.

    As part of a study of the application of communication satellites to educational development, certain technical aspects of such a system were examined. A current controlled bistable switching element using a CW Gunn diode is reported on here. With modest circuits switching rates of the order of 10 MHz have been obtained. Switching is initiated by…

  17. Superluminescent Diode Light Sources for OCT

    NASA Astrophysics Data System (ADS)

    Shidlovski, Vladimir R.

    Contrary to laser diodes, the path of superluminescent diodes (SLDs) to widespread practical use was much longer. There was always a scientific interest in "superluminescent" light output from laser diode structures slightly below threshold that might be considerably enhanced by "damping" of the laser resonator. SLD design efforts were intensified in early 1980s when it was proved that they are "light sources of choice" for fiber-optic gyroscopes. The next wave of interest to SLDs as a "stand-alone" type of semiconductor emitters was related to advances in OCT technologies. Challenging OCT requirements, e.g. simultaneous high-power, high brightness and very low coherence length of a light source, resulted in the development of new generation of SLDs characterized by output power and brightness the same as that of medium-to-high power laser diodes, but with the spectral width and flatness of edge-emitting LEDs. In this chapter, the main principles of the development of powerful broadband SLDs and ultra-low-coherence SLD-based light sources in 650-1600 nm spectral range, and the main parameters reported to date, are reviewed. Important aspects of SLD use in practice are discussed.

  18. Uniform insulation applied-B ion diode

    DOEpatents

    Seidel, David B.; Slutz, Stephen A.

    1988-01-01

    An applied-B field extraction ion diode has uniform insulation over an anode surface for increased efficiency. When the uniform insulation is accomplished with anode coils, and a charge-exchange foil is properly placed, the ions may be focused at a point on the z axis.

  19. Development of gallium aluminum phosphide electroluminescent diodes

    NASA Technical Reports Server (NTRS)

    Chicotka, R. J.; Lorenz, M. R.; Nethercot, A. H.; Pettit, G. D.

    1972-01-01

    Work done on the development of gallium aluminum phosphide alloys for electroluminescent light sources is described. The preparation of this wide band gap semiconductor alloy, its physical properties (particularly the band structure, the electrical characteristics, and the light emitting properties) and work done on the fabrication of diode structures from these alloys are broadly covered.

  20. Diode pumped Nd:YAG laser development

    NASA Technical Reports Server (NTRS)

    Reno, C. W.; Herzog, D. G.

    1976-01-01

    A low power Nd:YAG laser was constructed which employs GaAs injection lasers as a pump source. Power outputs of 125 mW TEM CW with the rod at 250 K and the pump at 180 K were achieved for 45 W input power to the pump source. Operation of the laser, with array and laser at a common heat sink temperature of 250 K, was inhibited by difficulties in constructing long-life GaAs LOC laser arrays. Tests verified pumping with output power of 20 to 30 mW with rod and pump at 250 K. Although life tests with single LOC GaAs diodes were somewhat encouraging (with single diodes operating as long as 9000 hours without degradation), failures of single diodes in arrays continue to occur, and 50 percent power is lost in a few hundred hours at 1 percent duty factor. Because of the large recent advances in the state of the art of CW room temperature AlGaAs diodes, their demonstrated lifetimes of greater than 5,000 hours, and their inherent advantages for this task, it is recommended that these sources be used for further CW YAG injection laser pumping work.

  1. Diode Arrays and QA of Advanced Techniques

    NASA Astrophysics Data System (ADS)

    Gutiérrez PhD, Alonso N.; Calvo Msc, Oscar

    2010-11-01

    Dosimetric verification of delivery for intensity-modulated radiotherapy (IMRT) treatment plans is critical to ensure accurate and safe patient treatments. Commonly, a point dose measurement using a calibrated ion chamber as well as a planar dose measurement using film was traditionally implemented for dosimetric quality assurance (QA) of treatment plans. However, new products have become commercially available in which both an absolute and coarse planar dose measurements can be acquired simultaneously by the use of an array of detectors—either ion chamber- or diode-based. Currently, two devices, MapCHECK and Delta4, utilize diode technology for planar dose measurements with Delta4 implementing an orthogonal biplanar arrangement versus the common singular plane. Both devices have been thoroughly clinically characterized with more published experience in the literature available for the MapCHECK due to the novelty of Delta4. In this review, an overview of basic diode dosimetry and both diode array systems is presented with an emphasis on our research and clinical experience of the Delta4.

  2. Long Persistent Light Emitting Diode Indicators

    ERIC Educational Resources Information Center

    Jia, Dongdong; Ma, Yiwei; Hunter, D. N.

    2007-01-01

    An undergraduate laboratory was designed for undergraduate students to make long persistent light emitting diode (LED) indicators using phosphors. Blue LEDs, which emit at 465 nm, were characterized and used as an excitation source. Long persistent phosphors, SrAl[subscript 2]O[subscript 4]:Eu[superscript 2+],Dy[superscript 3+] (green) and…

  3. Advances in laser diodes for pyrotechnic applications

    NASA Technical Reports Server (NTRS)

    Craig, Richard R.

    1993-01-01

    Background information concerning the use of laser diodes in pyrotechnic applications is provided in viewgraph form. The following topics are discussed: damage limits, temperature stability, fiber coupling issues, and small (100 micron) and large (400 micron) fiber results. The discussions concerning fiber results concentrate on the areas of package geometry and electro-optical properties.

  4. The Pierce-diode approximation to the single-emitter plasma diode

    NASA Astrophysics Data System (ADS)

    Ender, A. Ya.; Kuhn, S.; Kuznetsov, V. I.

    2006-11-01

    The possibility of modeling fast processes in the collisionless single-emitter plasma diode (Knudsen diode with surface ionization, KDSI) by means of the Pierce-diode is studied. The KDSI is of practical importance in that it is an almost exact model of thermionic energy converters (TICs) in the collisionless regime and can also be used to model low-density Q-machines. At high temperatures, the Knudsen TIC comes close to the efficiency of the Carnot cycle and hence is the most promising converter of thermal to electric energy. TICs can be applied as component parts in high-temperature electronics. It is shown that normalizations must be chosen appropriately in order to compare the plasma characteristics of the two models: the KDSI and the Pierce-diode. A linear eigenmode theory of the KDSI is developed. For both nonlinear time-independent states and linear eigenmodes without electron reflection, excellent agreement is found between the analytical potential distributions for the Pierce-diode and the corresponding numerical ones for the KDSI. For the states with electron reflection, the agreement is satisfactory in a qualitative sense. A full classification of states of both diodes for the regimes with and without electron reflection is presented. The effect of the thermal spread in electron velocities on the potential distributions and the (ɛ,η) diagrams is analyzed. Generally speaking, the methodology developed is usefully applicable to a variety of systems in which the electrons have beam-like distributions.

  5. The Pierce-diode approximation to the single-emitter plasma diode

    SciTech Connect

    Ender, A. Ya.; Kuhn, S.; Kuznetsov, V. I.

    2006-11-15

    The possibility of modeling fast processes in the collisionless single-emitter plasma diode (Knudsen diode with surface ionization, KDSI) by means of the Pierce-diode is studied. The KDSI is of practical importance in that it is an almost exact model of thermionic energy converters (TICs) in the collisionless regime and can also be used to model low-density Q-machines. At high temperatures, the Knudsen TIC comes close to the efficiency of the Carnot cycle and hence is the most promising converter of thermal to electric energy. TICs can be applied as component parts in high-temperature electronics. It is shown that normalizations must be chosen appropriately in order to compare the plasma characteristics of the two models: the KDSI and the Pierce-diode. A linear eigenmode theory of the KDSI is developed. For both nonlinear time-independent states and linear eigenmodes without electron reflection, excellent agreement is found between the analytical potential distributions for the Pierce-diode and the corresponding numerical ones for the KDSI. For the states with electron reflection, the agreement is satisfactory in a qualitative sense. A full classification of states of both diodes for the regimes with and without electron reflection is presented. The effect of the thermal spread in electron velocities on the potential distributions and the ({epsilon},{eta}) diagrams is analyzed. Generally speaking, the methodology developed is usefully applicable to a variety of systems in which the electrons have beam-like distributions.

  6. Transient shutdown analysis of low-temperature thermal diodes

    NASA Technical Reports Server (NTRS)

    Williams, R. J.

    1979-01-01

    The various thermal diodes available for use in cryogenic systems are described. Two diode types, liquid-trap and liquid-blockage diodes, were considered to be the most attractive, and thermal models were constructed to predict their behavior in the reverse mode. The diodes, which are of similar size and throughput, were also examined experimentally in a parallel test setup under nominally identical conditions. Their characteristics were ascertained in terms of forward-mode and reverse-mode conductances, shutdown times and energies, and recovery to forward-mode operation with ethane as the working fluid in the temperature range 170 K to 220 K. Results show that the liquid-blockage diode is the quicker of the two diodes to shut down from the forward mode (8 min as opposed to 10 min). However, the liquid-blockage diode has a larger reverse-mode conductance which results in a greater overall evaporator temperature rise. The importance of the relative size and heat inputs to the condenser/reservoir configuration of the liquid-blockage diode and the evaporator trap configuration for the liquid-trap diode are demonstrated. Also included are data which show the susceptibility of the diodes to recovery to forward-mode operation. Guidelines for the choice of a particular diode for an actual application are given.

  7. Electron beam current in high power cylindrical diode

    SciTech Connect

    Roy, Amitava; Menon, R.; Mitra, S.; Sharma, Vishnu; Singh, S. K.; Nagesh, K. V.; Chakravarthy, D. P.

    2010-01-15

    Intense electron beam generation studies were carried out in high power cylindrical diode to investigate the effect of the accelerating gap and diode voltage on the electron beam current. The diode voltage has been varied from 130 to 356 kV, whereas the current density has been varied from 87 to 391 A/cm{sup 2} with 100 ns pulse duration. The experimentally obtained electron beam current in the cylindrical diode has been compared with the Langmuir-Blodgett law. It was found that the diode current can be explained by a model of anode and cathode plasma expanding toward each other. However, the diode voltage and current do not follow the bipolar space-charge limited flow model. It was also found that initially only a part of the cathode take part in the emission process. The plasma expands at 4.2 cm/mus for 1.7 cm anode-cathode gap and the plasma velocity decreases for smaller gaps. The electrode plasma expansion velocity of the cylindrical diode is much smaller as compared with the planar diode for the same accelerating gap and diode voltage. Therefore, much higher voltage can be obtained for the cylindrical diodes as compared with the planar diodes for the same accelerating gap.

  8. 100 Years of the Physics of Diodes

    NASA Astrophysics Data System (ADS)

    Luginsland, John

    2013-10-01

    The Child-Langmuir Law (CL), discovered 100 years ago, gives the maximum current that can be transported across a planar diode in the steady state. As a quintessential example of the impact of space-charge shielding near a charged surface, it is central to the studies of high current diodes, such as high power microwave sources, vacuum microelectronics, electron and ion sources, and high current drivers used in high-energy density physics experiments. CL remains a touchstone of fundamental sheath physics, including contemporary studies of nano-scale quantum diodes and plasmonic devices. Its solid state analog is the Mott-Gurney law, governing the maximum charge injection in solids, such as organic materials and other dielectrics, which is important to energy devices, such as solar cells and light-emitting diodes. This paper reviews the important advances in the physics of diodes since the discovery of CL, including virtual cathode formation and extension of CL to multiple dimensions, to the quantum regime, and to ultrafast processes. We will review the influence of magnetic fields, multiple species in bipolar flow, electromagnetic and time dependent effects in both short pulse and high frequency THz limits, and single electron regimes. Transitions from various emission mechanisms (thermionic, field, and photo-emission) to the space charge limited state (CL) will be addressed, especially highlighting important simulation and experimental developments in selected contemporary areas of study. This talk will stress the fundamental physical links between the physics of beams to limiting currents in other areas, such as low temperature plasmas, laser plasmas, and space propulsion. Also emphasized is the role of non-equilibrium phenomena associated with materials and plasmas in close contact. Work supported by the Air Force Office of Scientific Research.

  9. Qualification and Selection of Flight Diode Lasers for Space Applications

    NASA Technical Reports Server (NTRS)

    Liebe, Carl C.; Dillon, Robert P.; Gontijo, Ivair; Forouhar, Siamak; Shapiro, Andrew A.; Cooper, Mark S.; Meras, Patrick L.

    2010-01-01

    The reliability and lifetime of laser diodes is critical to space missions. The Nuclear Spectroscopic Telescope Array (NuSTAR) mission includes a metrology system that is based upon laser diodes. An operational test facility has been developed to qualify and select, by mission standards, laser diodes that will survive the intended space environment and mission lifetime. The facility is situated in an electrostatic discharge (ESD) certified clean-room and consist of an enclosed temperature-controlled stage that can accommodate up to 20 laser diodes. The facility is designed to characterize a single laser diode, in addition to conducting laser lifetime testing on up to 20 laser diodes simultaneously. A standard laser current driver is used to drive a single laser diode. Laser diode current, voltage, power, and wavelength are measured for each laser diode, and a method of selecting the most adequate laser diodes for space deployment is implemented. The method consists of creating histograms of laser threshold currents, powers at a designated current, and wavelengths at designated power. From these histograms, the laser diodes that illustrate a performance that is outside the normal are rejected and the remaining lasers are considered spaceborne candidates. To perform laser lifetime testing, the facility is equipped with 20 custom laser drivers that were designed and built by California Institute of Technology specifically to drive NuSTAR metrology lasers. The laser drivers can be operated in constant-current mode or alternating-current mode. Situated inside the enclosure, in front of the laser diodes, are 20 power-meter heads to record laser power throughout the duration of lifetime testing. Prior to connecting a laser diode to the current source for characterization and lifetime testing, a background program is initiated to collect current, voltage, and resistance. This backstage data collection enables the operational test facility to have full laser diode

  10. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Ledentsov, N. N.; Shchukin, V. A.; Lyytikäinen, J.; Okhotnikov, O.; Cherkashin, N. A.; Shernyakov, Yu M.; Payusov, A. S.; Gordeev, N. Y.; Maximov, M. V.; Schlichting, S.; Nippert, F.; Hoffmann, A.

    2015-03-01

    We report on green (550-560 nm) electroluminescence (EL) from (Al0.5Ga0.5)0.5In0.5P-(Al0.8Ga0.2)0.5In0.5P double p-i-n heterostructures with monolayer-scale tensile strained GaP insertions in the cladding layers and light-emitting diodes (LEDs) based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. Cross-sectional transmission electron microscopy studies indicate that GaP insertions are flat, thus the GaP-barrier substrate orientation-dependent heights should match the predictions of the flat model. At moderate current densities (~500 A/cm2) the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (~550 nm at room temperature). At high current densities (>1 kA/cm2) a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4 kA/cm2, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14 kA/cm2. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p- doped (Al0.8Ga0.2)0.5In0.5P cladding layers.

  11. Underwater Chaotic Lidar using Blue Laser Diodes

    NASA Astrophysics Data System (ADS)

    Rumbaugh, Luke K.

    The thesis proposes and explores an underwater lidar system architecture based on chaotic modulation of recently introduced, commercially available, low cost blue laser diodes. This approach is experimentally shown to allow accurate underwater impulse response measurements while eliminating the need for several major components typically found in high-performance underwater lidar systems. The proposed approach is to: 1. Generate wideband, noise-like intensity modulation signals using optical chaotic modulation of blue-green laser diodes, and then 2. Use this signal source to develop an underwater chaotic lidar system that uses no electrical signal generator, no electro-optic modulator, no optical frequency doubler, and no large-aperture photodetector. The outcome of this thesis is the demonstration of a new underwater lidar system architecture that could allow high resolution ranging, imaging, and water profiling measurements in turbid water, at a reduced size, weight, power and cost relative to state-of-the-art high-performance underwater lidar sensors. This work also makes contributions to the state of the art in optics, nonlinear dynamics, and underwater sensing by demonstrating for the first time: 1. Wideband noise-like intensity modulation of a blue laser diode using no electrical signal generator or electro-optic modulator. Optical chaotic modulation of a 462 nm blue InGaN laser diode by self-feedback is explored for the first time. The usefulness of the signal to chaotic lidar is evaluated in terms of bandwidth, modulation depth, and autocorrelation peak-to-sidelobe-ratio (PSLR) using both computer and laboratory experiments. In laboratory experiments, the optical feedback technique is shown to be effective in generating wideband, noise-like chaotic signals with strong modulation depth when the diode is operated in an external-cavity dominated state. The modulation signal strength is shown to be limited by the onset of lasing within the diode's internal

  12. Infrared photoemitting diode having reduced work function

    DOEpatents

    Hirschfeld, Tomas B.

    1984-01-01

    In electro-optical detectors which include as elements a photoemitting photocathode and anode, a photoemitting diode is fabricated which lowers the diode's work function, thus reducing the cooling requirement typically needed for this type of device. The work function is reduced by sandwiching between the photocathode and anode a liquid medium of the formula NR.sub.3 and having an electron affinity for the electrons of the photocathode, which liquid medium permits free electrons leaving the photocathode to remain as stable solvated species in the liquid medium. Thus, highly light-absorbent, and therefore thin, metallic layers can be used for detection, thereby reducing dark current at a given temperature, with a consequent reduction in cooling requirements at constant detector performance.

  13. Infrared photoemitting diode having reduced work function

    DOEpatents

    Hirschfeld, T.B.

    1982-05-06

    In electro-optical detectors which include as elements a photoemitting photocathode and anode, a photoemitting diode is fabricated which lowers the diode's work function, thus reducing the cooling requirement typically needed for this type of device. The work function is reduced by sandwiching between the photocathode and anode a liquid meidum of the formula NR/sub 3/ and having an electron affinity for the electrons of the photocathode, which liquid medium permits free electrons leaving the photocathode to remain as stable solvated species in the liquid medium. Thus, highly light-absorbent, and therefore thin, metallic layers can be used for detection, thereby reducing dark current at a given temperature, with a consequent reduction in cooling requirements at constant detector performance.

  14. Optical diode based on plasmonic nanosphere chains

    NASA Astrophysics Data System (ADS)

    Aroua, W.; AbdelMalek, F.; Kamli, Ali A.

    2014-12-01

    The merging of electronics and photonics at the nanoscales overcomes the limitation in integrating photonic components into electronic chips, in which surface plasmon may play a central role in future hybrid nanocircuit integration. We report in this paper a surface plasmon optical diode based on the nonreciprocal light propagation. We show that by using a chain of plasmonic nanospheres embedded in a spatial-temporal modulated medium in silicon on insulator (SOI) waveguide the light propagates only in forward direction for metallic nanoparticles (MNPs). In this paper, the isolation of light is performed by calculating the optical intensity and propagation distance in both directions obtained by a finite difference time domain (FDTD) method. Our optical diode exhibits a large bandwidth and a competitive optical isolation region. Our design presents a fundamental feature in optical signal processing, and leverages the complementary metal-oxide semiconductor (CMOS) compatibility necessary for microelectronic industry.

  15. Advancements in ion diode and triode design

    SciTech Connect

    Cavenago, M.

    2014-02-15

    Selfconsistent laminar flow models, which enable to predict the optimal cathode and anode geometry in simple diodes, must be modified to account for the anode aperture and the effect of other electrodes. An equation for charge coupled to arbitrary laminar flows is here first presented and its numerical solutions are obtained with a new method, based on mesh transformations. It is found that a close match to theoretical flows requires an increase of the simple diode voltage v{sub 0} by an amount v{sub δ}, which, for a typical case designed for zero exit angle condition, are v{sub 0} = 0.7465 and v{sub δ} = 0.0294 in adimensional units. States “in” and “out” for the anode lens are also shown, where “out” is a new and nonlinear solution for the beam expansion in a drift tube.

  16. Digital thermometer circuit for silicon diode sensors

    NASA Astrophysics Data System (ADS)

    Lanchester, P. C.

    Silicon diode thermometers are now available commercially which conform closely to a specified, albeit non-linear characteristic. An inexpensive circuit has been developed which allows temperatures to be measured with a resolution of 0.01 K between 1.5 and 25 K, and 0.1 K between 25 and 375 K, and with an accuracy that in most applications will be limited by the calibration accuracy of the diode used. The design is based on a standard integrating analog to digital converter. A microprocessor is not required; precise linearization is achieved by means of a look-up table held in an EPROM. The circuit includes a simple digital interface for transferring data to a computer.

  17. DIODE STEERED MANGETIC-CORE MEMORY

    DOEpatents

    Melmed, A.S.; Shevlin, R.T.; Laupheimer, R.

    1962-09-18

    A word-arranged magnetic-core memory is designed for use in a digital computer utilizing the reverse or back current property of the semi-conductor diodes to restore the information in the memory after read-out. In order to ob tain a read-out signal from a magnetic core storage unit, it is necessary to change the states of some of the magnetic cores. In order to retain the information in the memory after read-out it is then necessary to provide a means to return the switched cores to their states before read-out. A rewrite driver passes a pulse back through each row of cores in which some switching has taken place. This pulse combines with the reverse current pulses of diodes for each column in which a core is switched during read-out to cause the particular cores to be switched back into their states prior to read-out. (AEC)

  18. Design of laser diode stable output system

    NASA Astrophysics Data System (ADS)

    Liu, Bo; Cao, Rui-ming

    2008-03-01

    High-stability output's system of laser diode is introduced in this paper. The system which is based on the MCU of MSP430 has been designed light power feedback loop and coller of TEC. It includes stable current, protecting circuit, light power feedback loop, temperature controlling, power display and so on. It is also able to control and show the power at the real time. The power could be set by botton too. The software of slow start up, slow close and the protecting relay are adopted by MCU. DRV592 is introduced as PWM driver to control the current of TEC. The duty cycle is generate by MCU. In order to control temperature, it is changed to influence the current of TEC. The power that is sampled by photodiode which is integrated in the laser diode is controlled by the micro-processing. The laser is monitored by voltage control circuit and current control circuit at the real time.

  19. Novel developments in laser diode Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Claps, Ricardo Javier

    2000-11-01

    This thesis presents the last developments of a laser diode Raman spectrometer for gases, gas flows and vapors, at medium-low pressures. Results are shown for atmospheric gases under STP conditions, and also gas flows from nozzles in subsonic-sonic regimes. The system is unique in that it uses a high power laser diode passively locked by an external grating cavity in Littman/Metcalf configuration, with side-band modes suppressed by 1:10-5, and a reduced bandwidth of <500MHz. The use of Rb vapor cells as notch filters with unprecedented narrow bandwidth (<7 cm-1), allow to collect Stokes and a-Stokes rotational Raman spectra simultaneously. The spectrometer is used to perform studies of thermodynamic equilibrium of gas flows; further studies of samples seeded in the flow (alkali- halides) are discussed, together with potential applications for environmental and industrial monitoring.

  20. Diode-pumped optical parametric oscillator

    SciTech Connect

    Geiger, A.R.; Hemmati, H.; Farr, W.H.

    1996-02-01

    Diode-pumped optical parametric oscillation has been demonstrated for the first time to our knowledge in a single Nd:MgO:LiNbO{sub 3} nonlinear crystal. The crystal is pumped by a semiconductor diode laser array at 812 nm. The Nd{sup 3+} ions absorb the 812-nm radiation to generate 1084-nm laser oscillation. On internal {ital Q} switching the 1084-nm radiation pumps the LiNbO{sub 3} host crystal that is angle cut at 46.5{degree} and generates optical parametric oscillation. The oscillation threshold that is due to the 1084-nm laser pump with a pulse length of 80 ns in a 1-mm-diameter beam was measured to be {approx_equal}1 mJ and produced 0.5-mJ output at 3400-nm signal wavelength. {copyright} {ital 1996 Optical Society of America.}

  1. Flexoelectric MEMS: towards an electromechanical strain diode

    NASA Astrophysics Data System (ADS)

    Bhaskar, U. K.; Banerjee, N.; Abdollahi, A.; Solanas, E.; Rijnders, G.; Catalan, G.

    2016-01-01

    Piezoelectricity and flexoelectricity are two independent but not incompatible forms of electromechanical response exhibited by nanoscale ferroelectrics. Here, we show that flexoelectricity can either enhance or suppress the piezoelectric response of the cantilever depending on the ferroelectric polarity and lead to a diode-like asymmetric (two-state) electromechanical response.Piezoelectricity and flexoelectricity are two independent but not incompatible forms of electromechanical response exhibited by nanoscale ferroelectrics. Here, we show that flexoelectricity can either enhance or suppress the piezoelectric response of the cantilever depending on the ferroelectric polarity and lead to a diode-like asymmetric (two-state) electromechanical response. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr06514c

  2. PIN silicon diode fast neutron detector.

    PubMed

    Zhou, Chunzhi; Zhao, Jianxing; Xiao, Wuyun

    2005-01-01

    Two batches of diodes, with different structural ratios (the ratio of area and thickness), were made using different manufacturing processes. The energy response of the first batch to 15 kinds of monoenergetic neutrons ranging from 180 keV to 17.56 MeV was tested, and the neutron source response of both batches to 239Pu-Be neutron source was measured. The energy deposition in the diodes irradiated by 1 keV to 20 MeV monoenergetic neutrons was calculated with simulation procedure. The response curve of the experimental results showed an approximately similar trend to that of theoretical computation. Based on the results of the neutron source response experiments, it was concluded that the response of fast neutron varied linearly with the structural ratio of the detectors. PMID:15972359

  3. Rugged, Tunable Extended-Cavity Diode Laser

    NASA Technical Reports Server (NTRS)

    Moore, Donald; Brinza, David; Seidel, David; Klipstein, William; Choi, Dong Ho; Le, Lam; Zhang, Guangzhi; Iniguez, Roberto; Tang, Wade

    2007-01-01

    A rugged, tunable extended-cavity diode laser (ECDL) has been developed to satisfy stringent requirements for frequency stability, notably including low sensitivity to vibration. This laser is designed specifically for use in an atomic-clock experiment to be performed aboard the International Space Station (ISS). Lasers of similar design would be suitable for use in terrestrial laboratories engaged in atomic-clock and atomic-physics research.

  4. Gaseous oxygen detection using laser diodes

    NASA Technical Reports Server (NTRS)

    Fox, Curtis W.; Disimile, Peter J.

    1991-01-01

    Transitions in the R-branch of the O2 A-band have been observed by modulating IR laser diode temperatures; on the basis of these transitions, O2 concentrations as low as 750 ppm can be determined. The transmission measurement's achievable precision correlates with an O2 concentration uncertainty of only 0.5 percent. Both the concentration and the static temperature of the gas are thereby determinable. Improved optics are being designed to improve these performance figures.

  5. Diode having trenches in a semiconductor region

    DOEpatents

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  6. Stability theory of Knudsen plasma diodes

    SciTech Connect

    Kuznetsov, V. I. Ender, A. Ya.

    2015-11-15

    A stability theory is developed for a plasma diode in which an electron beam supplied from the emitter propagates without collisions in the self-consistent electric field against the immobile ion background. An integral equation for the amplitude of the perturbed field is deduced using the Q,G method for the regime without electron reflection from a potential barrier. Analytic solutions to this equation are obtained for a number of important particular cases, and the plasma dispersion properties are examined.

  7. A Treatment of Amblyopia Using Laser Diodes

    NASA Astrophysics Data System (ADS)

    Wang, Di; Wang, Yi-Ding; Liu, Bing-Chun

    2000-04-01

    We propose the treatment of amblyopia using yellow-green laser diodes. There are amblyopia children in excess of fifty million in the world. Because the causative agent of amblyopia hasn't been well understood,only roughly considered to be concerned with visual sense cell, optic nerve network and function of nerve center, no appropriate treatment is found up to date. The vision of person is determined by the center hollow region of retina, where there are three kinds of cone cell. The corresponding peak wavelength in absorption spectrum locates 447nm (blue light), 532nm (green light) and 565nm (yellow light), respectively. When stimulated by white light, excited degree of three kinds of cone cell are identical,or yellow-green light, to which person eye is most sensitive, will significantly takes effects. Therefore the yellow-green laser diode is suitable for treating amblyopia. The weak laser, namely laser power less than mW order of magnitude, shows curative by stimulating bion tissue. When stimulating light power density is less than 0.001W/cm, the compounding speed of nucleic acid DNA is significantly increased. The growth rate of cell, activity of enzyme, content of hemoglobin and the growth of blood vessel, are all increased. However, it's key to control the dose of light. When the dose transcend some value, a inhibition will occur. The little dose of weak laser treatment can be accumulated with a parabolic characteristics, that is the weak laser generate bion response stengthening gradually versus time. Then it will weaken gradually after the peak. When the treatment duration is longer than a certain time, a inhibition also takes place. A suggested theraphy is characterized by little dose and short treatment course. In a conclusion, the yellow-green laser diode should be used for the treatment of amblyopia. The little dose and short treatment couse are to be adopted. Key words:treatment amblyopia laser diode

  8. New laser materials for laser diode pumping

    NASA Technical Reports Server (NTRS)

    Jenssen, H. P.

    1990-01-01

    The potential advantages of laser diode pumped solid state lasers are many with high overall efficiency being the most important. In order to realize these advantages, the solid state laser material needs to be optimized for diode laser pumping and for the particular application. In the case of the Nd laser, materials with a longer upper level radiative lifetime are desirable. This is because the laser diode is fundamentally a cw source, and to obtain high energy storage, a long integration time is necessary. Fluoride crystals are investigated as host materials for the Nd laser and also for IR laser transitions in other rare earths, such as the 2 micron Ho laser and the 3 micron Er laser. The approach is to investigate both known crystals, such as BaY2F8, as well as new crystals such as NaYF8. Emphasis is on the growth and spectroscopy of BaY2F8. These two efforts are parallel efforts. The growth effort is aimed at establishing conditions for obtaining large, high quality boules for laser samples. This requires numerous experimental growth runs; however, from these runs, samples suitable for spectroscopy become available.

  9. Performance measurements of hybrid PIN diode arrays

    SciTech Connect

    Jernigan, J.G.; Arens, J.F. . Space Sciences Lab.); Kramer, G. ); Collins, T.; Herring, J. ); Shapiro, S.L. ); Wilburn, C.D. )

    1990-05-01

    We report on the successful effort to develop hybrid PIN diode arrays and to demonstrate their potential as components of vertex detectors. Hybrid pixel arrays have been fabricated by the Hughes Aircraft Co. by bump bonding readout chips developed by Hughes to an array of PIN diodes manufactured by Micron Semiconductor Inc. These hybrid pixel arrays were constructed in two configurations. One array format having 10 {times} 64 pixels, each 120 {mu}m square, and the other format having 256 {times} 256 pixels, each 30 {mu}m square. In both cases, the thickness of the PIN diode layer is 300 {mu}m. Measurements of detector performance show that excellent position resolution can be achieved by interpolation. By determining the centroid of the charge cloud which spreads charge into a number of neighboring pixels, a spatial resolution of a few microns has been attained. The noise has been measured to be about 300 electrons (rms) at room temperature, as expected from KTC and dark current considerations, yielding a signal-to-noise ratio of about 100 for minimum ionizing particles. 4 refs., 13 figs.

  10. Electrostatic Discharge (ESD) Protection for a Laser Diode Ignited Actuator

    SciTech Connect

    SALAS, FREDERICK J.; SANCHEZ, DANIEL H.; WEINLEIN, JOHN HARVEY

    2003-06-01

    The use of laser diodes in devices to ignite pyrotechnics provides unique new capabilities including the elimination of electrostatic discharge (ESD) pulses entering the device. The Faraday cage formed by the construction of these devices removes the concern of inadvertent ignition of the energetic material. However, the laser diode itself can be damaged by ESD pulses, therefore, to enhance reliability, some protection of the laser diode is necessary. The development of the MC4612 Optical Actuator has included a circuit to protect the laser diode from ESD pulses including the ''Fisher'' severe human body ESD model. The MC4612 uses a laser diode and is designed to replace existing hot-wire actuators. Optical energy from a laser diode, instead of electrical energy, is used to ignite the pyrotechnic. The protection circuit is described along with a discussion of how the circuit design addresses and circumvents the historic 1Amp/1Watt requirement that has been applicable to hot-wire devices.

  11. High-power direct-diode laser successes

    NASA Astrophysics Data System (ADS)

    Haake, John M.; Zediker, Mark S.

    2004-06-01

    Direct diode laser will become much more prevalent in the solar system of manufacturing due to their high efficiency, small portable size, unique beam profiles, and low ownership costs. There has been many novel applications described for high power direct diode laser [HPDDL] systems but few have been implemented in extreme production environments due to diode and diode system reliability. We discuss several novel applications in which the HPDDL have been implemented and proven reliable and cost-effective in production environments. These applications are laser hardening/surface modification, laser wire feed welding and laser paint stripping. Each of these applications uniquely tests the direct diode laser systems capabilities and confirms their reliability in production environments. A comparison of the advantages direct diode laser versus traditional industrial lasers such as CO2 and Nd:YAG and non-laser technologies such a RF induction, and MIG welders for each of these production applications is presented.

  12. Trap-induced photoconductivity in singlet fission pentacene diodes

    SciTech Connect

    Qiao, Xianfeng Zhao, Chen; Chen, Bingbing; Luan, Lin

    2014-07-21

    This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.

  13. High-power laser diodes at various wavelengths

    SciTech Connect

    Emanuel, M.A.

    1997-02-19

    High power laser diodes at various wavelengths are described. First, performance and reliability of an optimized large transverse mode diode structure at 808 and 941 nm are presented. Next, data are presented on a 9.5 kW peak power array at 900 nm having a narrow emission bandwidth suitable for pumping Yb:S-FAP laser materials. Finally, results on a fiber-coupled laser diode array at {approx}730 nm are presented.

  14. Flight-qualification of a wideband laser diode transmitter module

    NASA Technical Reports Server (NTRS)

    Holcomb, Terry L.; Mecherle, G. S.

    1992-01-01

    A diffraction-limited laser diode transmitter module suitable for wideband direct detection laser communication is described. The transmitter module incorporates a high power semiconductor diode laser, collimating lens, thermal control, and driver circuit in a hermetic enclosure. The module has undergone environmental testing which demonstrates its suitability for space application, and accelerated lifetesting of the laser diode suggests an operational lifetime of nearly ten years.

  15. Multimode-diode-pumped gas (alkali-vapor) laser

    SciTech Connect

    Page, R H; Beach, R J; Kanz, V K

    2005-08-22

    We report the first demonstration of a multimode-diode-pumped gas laser--Rb vapor operating on the 795 nm resonance transition. Peak output of {approx}1 Watt was obtained using a volume-Bragg-grating stabilized pump diode array. The laser's output radiance exceeded the pump radiance by a factor greater than 2000. Power scaling (by pumping with larger diode arrays) is therefore possible.

  16. Underwater Chaotic Lidar using Blue Laser Diodes

    NASA Astrophysics Data System (ADS)

    Rumbaugh, Luke K.

    The thesis proposes and explores an underwater lidar system architecture based on chaotic modulation of recently introduced, commercially available, low cost blue laser diodes. This approach is experimentally shown to allow accurate underwater impulse response measurements while eliminating the need for several major components typically found in high-performance underwater lidar systems. The proposed approach is to: 1. Generate wideband, noise-like intensity modulation signals using optical chaotic modulation of blue-green laser diodes, and then 2. Use this signal source to develop an underwater chaotic lidar system that uses no electrical signal generator, no electro-optic modulator, no optical frequency doubler, and no large-aperture photodetector. The outcome of this thesis is the demonstration of a new underwater lidar system architecture that could allow high resolution ranging, imaging, and water profiling measurements in turbid water, at a reduced size, weight, power and cost relative to state-of-the-art high-performance underwater lidar sensors. This work also makes contributions to the state of the art in optics, nonlinear dynamics, and underwater sensing by demonstrating for the first time: 1. Wideband noise-like intensity modulation of a blue laser diode using no electrical signal generator or electro-optic modulator. Optical chaotic modulation of a 462 nm blue InGaN laser diode by self-feedback is explored for the first time. The usefulness of the signal to chaotic lidar is evaluated in terms of bandwidth, modulation depth, and autocorrelation peak-to-sidelobe-ratio (PSLR) using both computer and laboratory experiments. In laboratory experiments, the optical feedback technique is shown to be effective in generating wideband, noise-like chaotic signals with strong modulation depth when the diode is operated in an external-cavity dominated state. The modulation signal strength is shown to be limited by the onset of lasing within the diode's internal

  17. Performance and lifetime of high-power diode lasers and diode laser systems

    NASA Astrophysics Data System (ADS)

    Dorsch, Friedhelm; Daiminger, Franz X.

    1999-04-01

    High-power diode lasers have reached output power and reliability to meet requirements for industrial applications. Stacking of laser elements to modules increases the output power, beam shaping techniques allow to focus the radiation of a module to a single spot. An integrated diode laser systems with totally 50 laser bars is shown, that includes cooling, power supply and control unit. The laser radiation is transmitted by an optical fiber and an objective focuses the radiation onto the workpiece with a round spot of less than 1 mm diameter and cw power of more than 1 kW.

  18. Millimeter-wave diode-grid phase shifters

    NASA Technical Reports Server (NTRS)

    Lam, Wayne W.; Stolt, Kjell S.; Jou, Christina F.; Luhmann, Neville C., Jr.; Chen, Howard Z.

    1988-01-01

    Monolithic diode grids have been fabricated on 2-cm square gallium-arsenide wafers with 1600 Schottky-barrier varactor diodes. Shorted diodes are detected with a liquid-crystal technique, and the bad diodes are removed with an ultrasonic probe. A small-aperture reflectometer that uses wavefront division interference was developed to measure the reflection coefficient of the grids. A phase shift of 70 deg with a 7-dB loss was obtained at 93 GHz when the bias on the diode grid was changed from -3 V to 1 V. A simple transmission-line grid model, together with the measured low-frequency parameters for the diodes, was shown to predict the measured performance over the entire capacitive bias range of the diodes, as well as over the complete reactive tuning range provided by a reflector behind the grid, and over a wide range of frequencies from 33 GHz to 141 GHz. This shows that the transmission-line model and the measured low-frequency diode parameters can be used to design an electronic beam-steering array and to predict its performance. An electronic beam-steering array made of a pair of grids using state-of-the-art diodes with 5-ohm series resistances would have a loss of 1.4 dB at 90 GHz.

  19. Plasma-filled diode based on the coaxial gun

    NASA Astrophysics Data System (ADS)

    Zherlitsyn, A. A.; Kovalchuk, B. M.; Pedin, N. N.

    2012-10-01

    The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.

  20. Plasma-filled diode based on the coaxial gun.

    PubMed

    Zherlitsyn, A A; Kovalchuk, B M; Pedin, N N

    2012-10-01

    The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.

  1. Plasma-filled diode based on the coaxial gun

    SciTech Connect

    Zherlitsyn, A. A.; Kovalchuk, B. M.; Pedin, N. N.

    2012-10-15

    The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of {>=}1 MeV at the current of Almost-Equal-To 100 kA was obtained in the experiments with a plasma-filled diode. The energy of Almost-Equal-To 5 kJ with the peak power of {>=}100 GW dissipated in the diode.

  2. Dosimetric characteristics of a PIN diode for radiotherapy application.

    PubMed

    Kumar, R; Sharma, S D; Philomina, A; Topkar, A

    2014-08-01

    The PIN diode developed by Bhabha Atomic Research Centre (BARC) was modified for its use as a dosimeter in radiation therapy. For this purpose the diode was mounted on a printed circuit board (PCB) and provided with necessary connections so that its response against irradiation can be recorded by a standard radiotherapy electrometer. The dosimetric characteristics of the diode were studied in Co-60 gamma rays as well as high energy X-rays. The measured sensitivity of this PIN diode is 4 nC/cGy which is about ten times higher than some commercial diode dosimeters. The leakage current from the diode is 0.04 nA. The response of the PIN diode is linear in the range of 20-1000 cGy which covers the full range of radiation dose encountered in radiotherapy treatments. The non-linearity of the diode response is 3.5% at 20 cGy and it is less than 1.5% at higher dose values. Its repeatability is within 0.5%. The angular response variation is about 5.6% within 6608 with respect to normal beam incidence. The response of the PIN diode at 6 and 18 MV X-rays varies within 2% with respect to its response at Co-60 gamma rays. The source to surface distance (SSD) dependence of the PIN diode was studied for Co-60 beam. It was found that the response of the diode decreases almost linearly relative to given dose for beams with constant collimator setting but increasing SSD (decreasing dose-rate). Within this study the diode response varied by about 2.5% between the maximum and minimum SSD. The dose-rate dependence of the PIN diode for 6 and 15 MV-rays was studied. The variation in response of diode for both energies in the studied dose range is less than 1%. The field size dependence of the PIN diode response is within 1% with respect to the response of ionisation chamber. These studies indicate that the characteristics of the PIN diode are suitable for use in radiotherapy dosimetry.

  3. Apparatus for mounting a diode in a microwave circuit

    DOEpatents

    Liu, Shing-gong

    1976-07-27

    Apparatus for mounting a diode in a microwave circuit for making electrical contact between the circuit and ground and for dissipation of heat between the diode and a heat sink. The diode, supported on a thermally and electrically conductive member, is resiliently pressed in electrical contact with the microwave circuit. A tapered collar on the member is elastically deformably wedged into a tapered aperture formed in a heat sink. The wedged collar tightens firmly around the member establishing good thermal and electrical conduction from the diode to the heat sink and ground. Disassembly is facilitated because of the elastically deformed collar.

  4. Quasi-CW Laser Diode Bar Life Tests

    NASA Technical Reports Server (NTRS)

    Stephen, Mark A.; Krainak, Michael A.; Dallas, Joseph L.

    1997-01-01

    NASA's Goddard Space Flight Center is developing technology for satellite-based, high peak power, LIDAR transmitters requiring 3-5 years of reliable operation. Semi-conductor laser diodes provide high efficiency pumping of solid state lasers with the promise of long-lived, reliable operation. 100-watt quasi- CW laser diode bars have been baselined for the next generation laser altimeters. Multi-billion shot lifetimes are required. The authors have monitored the performance of several diodes for billions of shots and investigated operational modes for improving diode lifetime.

  5. Dosimetric characteristics of a PIN diode for radiotherapy application.

    PubMed

    Kumar, R; Sharma, S D; Philomina, A; Topkar, A

    2014-08-01

    The PIN diode developed by Bhabha Atomic Research Centre (BARC) was modified for its use as a dosimeter in radiation therapy. For this purpose the diode was mounted on a printed circuit board (PCB) and provided with necessary connections so that its response against irradiation can be recorded by a standard radiotherapy electrometer. The dosimetric characteristics of the diode were studied in Co-60 gamma rays as well as high energy X-rays. The measured sensitivity of this PIN diode is 4 nC/cGy which is about ten times higher than some commercial diode dosimeters. The leakage current from the diode is 0.04 nA. The response of the PIN diode is linear in the range of 20-1000 cGy which covers the full range of radiation dose encountered in radiotherapy treatments. The non-linearity of the diode response is 3.5% at 20 cGy and it is less than 1.5% at higher dose values. Its repeatability is within 0.5%. The angular response variation is about 5.6% within 6608 with respect to normal beam incidence. The response of the PIN diode at 6 and 18 MV X-rays varies within 2% with respect to its response at Co-60 gamma rays. The source to surface distance (SSD) dependence of the PIN diode was studied for Co-60 beam. It was found that the response of the diode decreases almost linearly relative to given dose for beams with constant collimator setting but increasing SSD (decreasing dose-rate). Within this study the diode response varied by about 2.5% between the maximum and minimum SSD. The dose-rate dependence of the PIN diode for 6 and 15 MV-rays was studied. The variation in response of diode for both energies in the studied dose range is less than 1%. The field size dependence of the PIN diode response is within 1% with respect to the response of ionisation chamber. These studies indicate that the characteristics of the PIN diode are suitable for use in radiotherapy dosimetry. PMID:24325130

  6. Planar GaAs diodes for THz frequency mixing applications

    NASA Technical Reports Server (NTRS)

    Bishop, William L.; Crowe, Thomas W.; Mattauch, Robert J.; Dossal, Hasan

    1992-01-01

    Schottky barrier diodes for terahertz applications are typically fabricated as a micron to sub-micron circular anode metallization on GaAs which is contacted with a sharp wire (whisker). This structure has the benefits of the simplicity of the fabrication of the diode chip, the minimal shunt capacitance of the whisker contact and the ability of the whisker wire to couple energy to the diode. However, whisker-contacted diodes are costly to assembly and difficult to qualify for space applications. Also, complex receiver systems which require many diodes are difficult to assemble. The objective of this paper is to discuss the advantages of planar Schottky diodes for high frequency receiver applications and to summarize the problems of advancing the planar technology to the terahertz frequency range. Section 2 will discuss the structure, fabrication and performance of state-of-the-art planar Schottky diodes. In Section 3 the problems of designing and fabricating planar diodes for terahertz frequency operation are discussed along with a number of viable solutions. Section 4 summarizes the need for further research and cooperation between diode designers and RF engineers.

  7. Thermal compensator for closed-cycle helium refrigerator. [assuring constant temperature for an infrared laser diode

    NASA Technical Reports Server (NTRS)

    Jennings, D. E.; Hillman, J. J. (Inventor)

    1979-01-01

    The wave length of an infrared, semiconductor laser diode having an output frequency that is dependent on the diode temperature is maintained substantially constant by maintaining the diode temperature constant. The diode is carried by a cold tip of a closed cycle helium refrigerator. The refrigerator has a tendency to cause the temperature of the cold tip to oscillate. A heater diode and a sensor diode are placed on a thermal heat sink that is the only highly conductive thermal path between the laser diode and the cold tip. The heat sink has a small volume and low thermal capacitance so that the sensing diode is at substantially the same temperature as the heater diode and substantially no thermal lag exists between them. The sensor diode is connected in a negative feedback circuit with the heater diode so that the tendency of the laser diode to thermally oscillate is virtually eliminated.

  8. Position and mode dependent coupling of terahertz quantum cascade laser fields to an integrated diode

    NASA Astrophysics Data System (ADS)

    Dyer, Gregory C.; Nordquist, Christopher D.; Cich, Michael J.; Ribaudo, Troy; Grine, Albert D.; Fuller, Charles T.; Reno, John L.; Wanke, Michael C.

    2013-10-01

    A Schottky diode integrated into a terahertz quantum cascade laser waveguide couples directly to the internal laser fields. In a multimode laser, the diode response is correlated with both the instantaneous power and the coupling strength to the diode of each lasing mode. Measurements of the rectified response of diodes integrated in two quantum cascade laser cavities at different locations indicate that the relative diode position strongly influences the laser-diode coupling.

  9. New uncooled thermal IR detector using silicon-diode-micromachined isolated silicon diode for IR detection (MISIR)

    NASA Astrophysics Data System (ADS)

    Kim, Jae-Kwan; Han, Chul-Hi

    2000-12-01

    A new thermal infrared detector using temperature characteristics of a diode has been developed. This micromachined isolated silicon diode for IR detection (MISIR) utilizes an electrochemical etching technique to achieve the thermal isolation of the diode. Experimental dependence of the diode current on the junction temperature enables a high responsivity of the MISIR and the electrochemical etch stop provides an effective isolation at simple and low-cost. The fabricated MISIR has demonstrated a detectivity of 1.2x1010(cm(DOT)HzHLF/W) at room temperature in air ambient.

  10. Broadband External-Cavity Diode Laser

    NASA Technical Reports Server (NTRS)

    Pilgrim, Jeffrey S.

    2005-01-01

    A broadband external-cavity diode laser (ECDL) has been invented for use in spectroscopic surveys preparatory to optical detection of gases. Heretofore, commercially available ECDLs have been designed, in conjunction with sophisticated tuning assemblies, for narrow- band (and, typically, single-frequency) operation, as needed for high sensitivity and high spectral resolution in some gas-detection applications. However, for preparatory spectroscopic surveys, high sensitivity and narrow-band operation are not needed; in such cases, the present broadband ECDL offers a simpler, less-expensive, more-compact alternative to a commercial narrowband ECDL.

  11. Diode pumped alkali vapor fiber laser

    DOEpatents

    Payne, Stephen A.; Beach, Raymond J.; Dawson, Jay W.; Krupke, William F.

    2007-10-23

    A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

  12. Diode pumped alkali vapor fiber laser

    DOEpatents

    Payne, Stephen A.; Beach, Raymond J.; Dawson, Jay W.; Krupke, William F.

    2006-07-26

    A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

  13. Nanoscale organic light-emitting diodes.

    PubMed

    Yamamoto, Hiromichi; Wilkinson, John; Long, James P; Bussman, Konrad; Christodoulides, Joseph A; Kafafi, Zakya H

    2005-12-01

    This study reports the fabrication and characterization of nanoscale organic light-emitting diodes (nano-OLEDs) based on poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV). The nano-OLEDs were fabricated by spin casting MEH-PPV into cylindrical nanoholes lithographically patterned into silicon nitride. The electroluminescence (EL) spectrum of MEH-PPV was similar to its photoluminescence spectrum, confirming radiative decay from the same excited state. Device characteristics in the form of current density and EL versus applied electric field are presented and compared with those of a large-scale OLED.

  14. Method for partially coating laser diode facets

    NASA Technical Reports Server (NTRS)

    Dholakia, Anil R. (Inventor)

    1990-01-01

    Bars of integral laser diode devices cleaved from a wafer are placed with their p regions abutting and n regions abutting. A thin BeCu mask having alternate openings and strips of the same width as the end facets is used to mask the n region interfaces so that multiple bars can be partially coated over their exposed p regions with a reflective or partial reflective coating. The partial coating permits identification of the emitting facet from the fully coated back facet during a later device mounting procedure.

  15. Bypass diode for a solar cell

    DOEpatents

    Rim, Seung Bum; Kim, Taeseok; Smith, David D; Cousins, Peter J

    2013-11-12

    Methods of fabricating bypass diodes for solar cells are described. In once embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed on the first conductive region. In another embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed within, and surrounded by, an uppermost portion of the first conductive region but is not formed in a lowermost portion of the first conductive region.

  16. Advancements in flowing diode pumped alkali lasers

    NASA Astrophysics Data System (ADS)

    Pitz, Greg A.; Stalnaker, Donald M.; Guild, Eric M.; Oliker, Benjamin Q.; Moran, Paul J.; Townsend, Steven W.; Hostutler, David A.

    2016-03-01

    Multiple variants of the Diode Pumped Alkali Laser (DPAL) have recently been demonstrated at the Air Force Research Laboratory (AFRL). Highlights of this ongoing research effort include: a) a 571W rubidium (Rb) based Master Oscillator Power Amplifier (MOPA) with a gain (2α) of 0.48 cm-1, b) a rubidium-cesium (Cs) Multi-Alkali Multi-Line (MAML) laser that simultaneously lases at both 795 nm and 895 nm, and c) a 1.5 kW resonantly pumped potassium (K) DPAL with a slope efficiency of 50%. The common factor among these experiments is the use of a flowing alkali test bed.

  17. Rubidium dimer destruction by a diode laser

    SciTech Connect

    Ban, T.; Aumiler, D.; Pichler, G.

    2005-02-01

    We observed rubidium dimer destruction by excitation of rubidium vapor with diode laser light tuned across the Rb D{sub 2} resonance line in a 2400 GHz tuning interval. The destruction was measured for rubidium atom concentrations in the (1-9)x10{sup 16} cm{sup -3} range, pump beam power up to 43 mW, and with a 5 Torr of the helium buffer gas. We discuss the physical mechanisms involved and specify the molecular pathways which may effectively lead to the observed dimer destruction.

  18. Submillimeter wave detection with superconducting tunnel diodes

    NASA Technical Reports Server (NTRS)

    Wengler, Michael J.

    1992-01-01

    Superconductor-Insulator-Superconductor (SIS) diodes are the detector elements in the most sensitive heterodyne receivers available from 100 to 500 GHz. SIS mixers are the front end of radio astronomical systems around the world. SIS mixer technology is being extended to 1 THz and higher frequencies for eventual use on spaceborne astronomical experiments. Here is a short review of submillimeter SIS mixers. The role of impedance matching in the proper design of an SIS mixer is described. A variety of methods for achieving good impedance match at submillimeter frequencies are presented. The experimental state of the submillimeter SIS mixer art is described and summarized.

  19. Atomically thin quantum light-emitting diodes

    PubMed Central

    Palacios-Berraquero, Carmen; Barbone, Matteo; Kara, Dhiren M.; Chen, Xiaolong; Goykhman, Ilya; Yoon, Duhee; Ott, Anna K.; Beitner, Jan; Watanabe, Kenji; Taniguchi, Takashi; Ferrari, Andrea C.; Atatüre, Mete

    2016-01-01

    Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices. PMID:27667022

  20. Wheat Under LED's (Light Emitting Diodes)

    NASA Technical Reports Server (NTRS)

    2004-01-01

    Astroculture is a suite of technologies used to produce and maintain a closed controlled environment for plant growth. The two most recent missions supported growth of potato, dwarf wheat, and mustard plants, and provided scientists with the first opportunity to conduct true plant research in space. Light emitting diodes have particular usefulness for plant growth lighting because they emit a much smaller amount of radiant heat than do conventional lighting sources and because they have potential of directing a higher percentage of the emitted light onto plants surfaces. Furthermore, the high output LED's have emissions in the 600-700 nm waveband, which is of highest efficiency for photosynthesis by plants.

  1. Tunable Diode Laser Heterodyne Spectrophotometry of Ozone

    NASA Technical Reports Server (NTRS)

    Fogal, P. F.; McElroy, C. T.; Goldman, A.; Murcray, D. G.

    1988-01-01

    Tunable diode laser heterodyne spectrophotometry (TDLHS) has been used to make extremely high resolution (less than 0.0005/ cm) solar spectra in the 9.6 micron ozone band. Observations have shown that a signal-to-noise ratio of 95 : 1 (35% of theoretical) for an integration time of 1/8 second can be achieved at a resolution of 0.0005 wavenumbers. The spectral data have been inverted to yield a total column amount of ozone, in good agreement with that. measured at the nearby National Oceanographic and Atmospheric Administration (NOAA) ozone monitoring facility in Boulder, Colorado.

  2. Optical communication with semiconductor laser diode

    NASA Technical Reports Server (NTRS)

    Davidson, Frederic; Sun, X.

    1989-01-01

    This interim report describes the progress in the construction of a 220 Mbps Q=4 PPM optical communication system that uses a semiconductor laser as the optical transmitter and an avalanche photodiode (APD) as the photodetector. The transmitter electronics have been completed and contain both GaAs and ECL III IC's. The circuit was able to operate at a source binary data rate from 75 Mbps to 290 Mbps with pulse rise and fall times of 400 ps. The pulse shapes of the laser diode and the response from the APD/preamplifier module were also measured.

  3. Thermal Reliability Study of Bypass Diodes in Photovoltaic Modules (Poster)

    SciTech Connect

    Zhang, Z.; Wohlgemuth, J.; Kurtz, S.

    2013-05-01

    This paper presents the result of high-temperature durability and thermal cycling testing and analysis for the selected diodes to study the detail of the thermal design and relative long-term reliability of the bypass diodes used to limit the detrimental effects of module hot-spot susceptibility.

  4. CO.sub.2 optically pumped distributed feedback diode laser

    DOEpatents

    Rockwood, Stephen D.

    1980-01-01

    A diode laser optically pumped by a CO.sub.2 coherent source. Interference fringes generated by feeding the optical pumping beam against a second beam, periodically alter the reflectivity of the diode medium allowing frequency variation of the output signal by varying the impingent angle of the CO.sub.2 laser beams.

  5. Operation of AC Adapters Visualized Using Light-Emitting Diodes

    ERIC Educational Resources Information Center

    Regester, Jeffrey

    2016-01-01

    A bridge rectifier is a diamond-shaped configuration of diodes that serves to convert alternating current(AC) into direct current (DC). In our world of AC outlets and DC electronics, they are ubiquitous. Of course, most bridge rectifiers are built with regular diodes, not the light-emitting variety, because LEDs have a number of disadvantages. For…

  6. Organic reprogrammable circuits based on electrochemically formed diodes.

    PubMed

    Liu, Jiang; Engquist, Isak; Berggren, Magnus

    2014-08-13

    We report a method to construct reprogrammable circuits based on organic electrochemical (EC) p-n junction diodes. The diodes are built up from the combination of the organic conjugated polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] and a polymer electrolyte. The p-n diodes are defined by EC doping performed at 70 °C, and then stabilized at -30 °C. The reversible EC reaction allows for in situ reprogramming of the polarity of the organic p-n junction, thus enabling us to reconfigure diode circuits. By combining diodes of specific polarities dedicated circuits have been created, such as various logic gates, a voltage limiter and an AC/DC converter. Reversing the EC reaction allows in situ reprogramming of the p-n junction polarity, thus enabling reconfiguration of diode circuits, for example, from an AND gate to an OR gate. The reprogrammable circuits are based on p-n diodes defined from only two layers, the electrodes and then the active semiconductor:electrolyte composite material. Such simple device structures are promising for large-area and fully printed reconfigurable circuits manufactured using common printing tools. The structure of the reported p-n diodes mimics the architecture of and is based on identical materials used to construct light-emitting electrochemical cells (LEC). Our findings thus provide a robust signal routing technology that is easily integrated with traditional LECs.

  7. Integral bypass diodes in an amorphous silicon alloy photovoltaic module

    NASA Technical Reports Server (NTRS)

    Hanak, J. J.; Flaisher, H.

    1991-01-01

    Thin-film, tandem-junction, amorphous silicon (a-Si) photovoltaic modules were constructed in which a part of the a-Si alloy cell material is used to form bypass protection diodes. This integral design circumvents the need for incorporating external, conventional diodes, thus simplifying the manufacturing process and reducing module weight.

  8. Organic reprogrammable circuits based on electrochemically formed diodes.

    PubMed

    Liu, Jiang; Engquist, Isak; Berggren, Magnus

    2014-08-13

    We report a method to construct reprogrammable circuits based on organic electrochemical (EC) p-n junction diodes. The diodes are built up from the combination of the organic conjugated polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] and a polymer electrolyte. The p-n diodes are defined by EC doping performed at 70 °C, and then stabilized at -30 °C. The reversible EC reaction allows for in situ reprogramming of the polarity of the organic p-n junction, thus enabling us to reconfigure diode circuits. By combining diodes of specific polarities dedicated circuits have been created, such as various logic gates, a voltage limiter and an AC/DC converter. Reversing the EC reaction allows in situ reprogramming of the p-n junction polarity, thus enabling reconfiguration of diode circuits, for example, from an AND gate to an OR gate. The reprogrammable circuits are based on p-n diodes defined from only two layers, the electrodes and then the active semiconductor:electrolyte composite material. Such simple device structures are promising for large-area and fully printed reconfigurable circuits manufactured using common printing tools. The structure of the reported p-n diodes mimics the architecture of and is based on identical materials used to construct light-emitting electrochemical cells (LEC). Our findings thus provide a robust signal routing technology that is easily integrated with traditional LECs. PMID:24998703

  9. IMPATT diodes. Citations from the NTIS data base

    NASA Astrophysics Data System (ADS)

    Reed, W. E.

    1980-04-01

    Government sponsored research reports are cited covering the design, characterization, and applications of IMPATT diodes. Topics include reliability, power handling, properties, noise, fabrication, and radiation effects. The use of silicon and gallium arsenide IMPATT diodes for microwave generation and amplification is included. This updated bibliography contains 182 abstracts, 14 of which are new entries to the previous edition.

  10. Advances in bonding technology for high power diode laser bars

    NASA Astrophysics Data System (ADS)

    Wang, Jingwei; Li, Xiaoning; Hou, Dong; Feng, Feifei; Liu, Yalong; Liu, Xingsheng

    2015-02-01

    Due to their high electrical-optical conversion efficiency, compact size and long lifetime, high power diode lasers have found increased applications in many fields. As the improvement of device technology, high power diode laser bars with output power of tens or hundreds watts have been commercially available. With the increase of high current and output power, the reliability and lifetime of high power diode laser bars becomes a challenge, especially under harsh working conditions and hard-pulse operations. The bonding technology is still one of the bottlenecks of the advancement of high power diode laser bars. Currently, materials used in bonding high power diode laser bars are commonly indium and goldtin solders. Experimental and field application results indicates that the lifetime and reliability of high power diode laser bars bonded by gold-tin solder is much better than that bonded by indium solder which is prone to thermal fatigue, electro-migration and oxidization. In this paper, we review the bonding technologies for high power diode laser bars and present the advances in bonding technology for single bars, horizontal bar arrays and vertical bar stacks. We will also present the challenges and issues in bonding technology for high power diode laser bars and discuss some approaches and strategies in addressing the challenges and issues.

  11. Transistor biased amplifier minimizes diode discriminator threshold attenuation

    NASA Technical Reports Server (NTRS)

    Larsen, R. N.

    1967-01-01

    Transistor biased amplifier has a biased diode discriminator driven by a high impedance /several megohms/ current source, rather than a voltage source with several hundred ohms output impedance. This high impedance input arrangement makes the incremental impedance of the threshold diode negligible relative to the input impedance.

  12. Diode Laser for Laryngeal Surgery: a Systematic Review

    PubMed Central

    Arroyo, Helena Hotz; Neri, Larissa; Fussuma, Carina Yuri; Imamura, Rui

    2016-01-01

    Introduction The diode laser has been frequently used in the management of laryngeal disorders. The portability and functional diversity of this tool make it a reasonable alternative to conventional lasers. However, whether diode laser has been applied in transoral laser microsurgery, the ideal parameters, outcomes, and adverse effects remain unclear. Objective The main objective of this systematic review is to provide a reliable evaluation of the use of diode laser in laryngeal diseases, trying to clarify its ideal parameters in the larynx, as well as its outcomes and complications. Data Synthesis We included eleven studies in the final analysis. From the included articles, we collected data on patient and lesion characteristics, treatment (diode laser's parameters used in surgery), and outcomes related to the laser surgery performed. Only two studies were prospective and there were no randomized controlled trials. Most of the evidence suggests that the diode laser can be a useful tool for treatment of different pathologies in the larynx. In this sense, the parameters must be set depending on the goal (vaporization, section, or coagulation) and the clinical problem. Conclusion: The literature lacks studies on the ideal parameters of the diode laser in laryngeal surgery. The available data indicate that diode laser is a useful tool that should be considered in laryngeal surgeries. Thus, large, well-designed studies correlated with diode compared with other lasers are needed to better estimate its effects. PMID:27096024

  13. Simple tunnel diode circuit for accurate zero crossing timing

    NASA Technical Reports Server (NTRS)

    Metz, A. J.

    1969-01-01

    Tunnel diode circuit, capable of timing the zero crossing point of bipolar pulses, provides effective design for a fast crossing detector. It combines a nonlinear load line with the diode to detect the zero crossing of a wide range of input waveshapes.

  14. New diode wavelengths for pumping solid-state lasers

    SciTech Connect

    Skidmore, J.A.; Emanuel, M.A.; Beach, R.J.

    1995-01-01

    High-power laser-diode arrays have been demonstrated to be viable pump sources for solid-state lasers. The diode bars (fill factor of 0.7) were bonded to silicon microchannel heatsinks for high-average-power operation. Over 12 W of CW output power was achieved from a one cm AlGaInP tensile-strained single-quantum-well laser diode bar. At 690 nm, a compressively-strained single-quantum-well laser-diode array produced 360 W/cm{sup 2} per emitting aperture under CW operation, and 2.85 kW of pulsed power from a 3.8 cm{sup 2} emitting-aperture array. InGaAs strained single-quantum-well laser diodes emitting at 900 nm produced 2.8 kW pulsed power from a 4.4 cm{sup 2} emitting-aperture array.

  15. Design, fabrication, and testing of a cryogenic thermal diode

    NASA Technical Reports Server (NTRS)

    Quadrini, J.; Kosson, R.

    1974-01-01

    Cryogenic heat pipe diode applications and a new heat pipe geometry are discussed. This new geometry employs excess liquid to block the vapor space of the evaporator and part of the transport section during reverse mode conditions. An orifice plate is positioned in the pipe at the blocking meniscus location, with the opening arranged to permit proper liquid distribution in both ground tests and zero g operation. Experimental data are presented for a room temperature heat pipe modified to operate as a blocking orifice diode. The test results verify feasibility of the blocking orifice technique with the diode having a rapid shutoff characteristic. The selection of a diode for fabrication and test was based mainly on a parametric investigation of the liquid trap and liquid blockage techniques. The blocking orifice form of liquid blockage was selected for the cryogenic diode based on its high throughput, small reservoir requirement, and small energy and time required for shutoff.

  16. Theory of applied-/ital B/ ion diodes

    SciTech Connect

    Desjarlais, M. P.

    1989-08-01

    A recently introduced theory of applied-/ital B/ ion diodes (Phys. Rev. Lett. /bold 59/, 2295 (1987)) is developed and presented in detail. The theory incorporates the self-consistent virtual cathode motion to obtain the steady-state ion current as a function of diode voltage. The existence of a limiting voltage at which the ion current diverges is demonstrated. The voltage--current characteristics of the diode are combined with a simple circuit model of the accelerator to calculate the operating point of the diode. The theoretical results are in good agreement with experimental data at peak power. An important consequence of the theory is a relation between the limiting diode voltage and the insulating magnetic flux, suggesting a late-time voltage decay driven by flux penetration into the anode plasma.

  17. Electrochemical mechanism of ion current rectification of polyelectrolyte gel diodes.

    PubMed

    Yamamoto, Tetsuya; Doi, Masao

    2014-06-17

    Polyelectrolyte gel diodes that are double layers of two oppositely charged polyelectrolyte gels, sandwiched by two symmetric electrodes, are emergent ionic devices. These diodes are designed to rectify ion currents with a physical mechanism that is analogous to conventional semiconductor diodes-the asymmetry in the permeability of ions across the interfaces between the two oppositely charged gels. Here we show that polyelectrolyte gel diodes indeed rectify steady currents with a physical mechanism that is very different from conventional diodes by using a simple electrochemical model; electric currents are limited by electrochemical reactions that are driven by potential drops at electrodes and these potential drops markedly change with changing the direction of applied voltages due to the redistribution of non-reactive counterions, leading to rectified ion currents. This concept is relatively generic and thus may provide insight in the physics of analogous ionic and biomimetic systems that show electrochemical reactions.

  18. Angle sensitive single photon avalanche diode

    SciTech Connect

    Lee, Changhyuk Johnson, Ben Molnar, Alyosha

    2015-06-08

    An ideal light sensor would provide exact information on intensity, timing, location, and angle of incoming photons. Single photon avalanche diodes (SPADs) provide such desired high (single photon) sensitivity with precise time information and can be implemented at a pixel-scale to form an array to extract spatial information. Furthermore, recent work has demonstrated photodiode-based structures (combined with micro-lenses or diffraction gratings) that are capable of encoding both spatial and angular information of incident light. In this letter, we describe the implementation of such a grating structure on SPADs to realize a pixel-scale angle-sensitive single photon avalanche diode (A-SPAD) built in a standard CMOS process. While the underlying SPAD structure provides high sensitivity, the time information of the two layers of diffraction gratings above offers angle-sensitivity. Such a unique combination of SPAD and diffraction gratings expands the sensing dimensions to pave a path towards lens-less 3-D imaging and light-field time-of-flight imaging.

  19. Space Qualification of Laser Diode Arrays

    NASA Technical Reports Server (NTRS)

    Troupaki, Elisavet; Kashem, Nasir B.; Allan, Graham R.; Vasilyev, Aleksey; Stephen, Mark

    2005-01-01

    Laser instruments have great potential in enabling a new generation of remote-sensing scientific instruments. NASA s desire to employ laser instruments aboard satellites, imposes stringent reliability requirements under severe conditions. As a result of these requirements, NASA has a research program to understand, quantify and reduce the risk of failure to these instruments when deployed on satellites. Most of NASA s proposed laser missions have base-lined diode-pumped Nd:YAG lasers that generally use quasi-constant wave (QCW), 808 nm Laser Diode Arrays (LDAs). Our group has an on-going test program to measure the performance of these LDAs when operated in conditions replicating launch and orbit. In this paper, we report on the results of tests designed to measure the effect of vibration loads simulating launch into space and the radiation environment encountered on orbit. Our primary objective is to quantify the performance of the LDAs in conditions replicating those of a satellite instrument, determine their limitations and strengths which will enable better and more robust designs. To this end we have developed a systematic testing strategy to quantify the effect of environmental stresses on the optical and electrical properties of the LDA.

  20. Giant Electroresistive Ferroelectric Diode on 2DEG.

    PubMed

    Kim, Shin-Ik; Jin Gwon, Hyo; Kim, Dai-Hong; Keun Kim, Seong; Choi, Ji-Won; Yoon, Seok-Jin; Jung Chang, Hye; Kang, Chong-Yun; Kwon, Beomjin; Bark, Chung-Wung; Hong, Seong-Hyeon; Kim, Jin-Sang; Baek, Seung-Hyub

    2015-05-27

    Manipulation of electrons in a solid through transmitting, storing, and switching is the fundamental basis for the microelectronic devices. Recently, the electroresistance effect in the ferroelectric capacitors has provided a novel way to modulate the electron transport by polarization reversal. Here, we demonstrate a giant electroresistive ferroelectric diode integrating a ferroelectric capacitor into two-dimensional electron gas (2DEG) at oxide interface. As a model system, we fabricate an epitaxial Au/Pb(Zr(0.2)Ti(0.8))O3/LaAlO3/SrTiO3 heterostructure, where 2DEG is formed at LaAlO3/SrTiO3 interface. This device functions as a two-terminal, non-volatile memory of 1 diode-1 resistor with a large I+/I- ratio (>10(8) at ± 6 V) and I(on)/I(off) ratio (>10(7)). This is attributed to not only Schottky barrier modulation at metal/ferroelectric interface by polarization reversal but also the field-effect metal-insulator transition of 2DEG. Moreover, using this heterostructure, we can demonstrate a memristive behavior for an artificial synapse memory, where the resistance can be continuously tuned by partial polarization switching, and the electrons are only unidirectionally transmitted. Beyond non-volatile memory and logic devices, our results will provide new opportunities to emerging electronic devices such as multifunctional nanoelectronics and neuromorphic electronics.

  1. A new diode laser acupuncture therapy apparatus

    NASA Astrophysics Data System (ADS)

    Li, Chengwei; Huang, Zhen; Li, Dongyu; Zhang, Xiaoyuan

    2006-06-01

    Since the first laser-needles acupuncture apparatus was introduced in therapy, this kind of apparatus has been well used in laser biomedicine as its non-invasive, pain- free, non-bacterium, and safetool. The laser acupuncture apparatus in this paper is based on single-chip microcomputer and associated by semiconductor laser technology. The function like traditional moxibustion including reinforcing and reducing is implemented by applying chaos method to control the duty cycle of moxibustion signal, and the traditional lifting and thrusting of acupuncture is implemented by changing power output of the diode laser. The radiator element of diode laser is made and the drive circuit is designed. And chaos mathematic model is used to produce deterministic class stochastic signal to avoid the body adaptability. This function covers the shortages of continuous irradiation or that of simple disciplinary stimulate signal, which is controlled by some simple electronic circuit and become easily adjusted by human body. The realization of reinforcing and reducing of moxibustion is technological innovation in traditional acupuncture coming true in engineering.

  2. Wavelength control of visible light laser diodes

    NASA Astrophysics Data System (ADS)

    Goto, N.; Fujii, T.; Nemoto, K.; Suzuki, H.; Nakagawa, K.; Otsu, M.

    1990-04-01

    Wavelength control of visible light laser diodes was studied. By combining an interferometer and a diffraction grating, it became possible to control the wavelength of continuous oscillation in the range of 664 to 673nm, the frequency fine control range being 2GHz. And the spectral linewidth was narrowed to about 44kHz (10 exp minus 7 nm). With the use of a collimator lens, the beam expansion was narrowed to 2mrad. It was confirmed that the pulse output of continuous oscillation visible light laser diodes can be amplified by the YAG laser excitation dye laser. In the case of pulse oscillation, oscillation of 1GHz spectral width was obtained at the wavelength of 0.8 micro m by using an injection synchronization method. In the injection synchronization method, other laser beam is injected in an oscillator and a superior laser beam of synchronized components alone is obtained. As the wavelength control method is now stabilized and satisfies the conditions of narrow band, it has the prospect to be applied to the laser uranium enrichment technology.

  3. Sensitivity of resonant tunneling diode photodetectors

    NASA Astrophysics Data System (ADS)

    Pfenning, Andreas; Hartmann, Fabian; Langer, Fabian; Kamp, Martin; Höfling, Sven; Worschech, Lukas

    2016-09-01

    We have studied the sensitivity of AlGaAs/GaAs double barrier resonant tunneling diode photodetectors with an integrated GaInNAs absorption layer for light sensing at the telecommunication wavelength of λ = 1.3 μm for illumination powers from pico- to microwatts. The sensitivity decreases nonlinearly with power. An illumination power increase of seven orders of magnitude leads to a reduction of the photocurrent sensitivity from S I = 5.82 × 103 A W‑1 to 3.2 A W‑1. We attribute the nonlinear sensitivity–power dependence to an altered local electrostatic potential due to hole-accumulation that on the one hand tunes the tunneling current, but on the other hand affects the lifetime of photogenerated holes. In particular, the lifetime decreases exponentially with increasing hole population. The lifetime reduction results from an enhanced electrical field, a rise of the quasi-Fermi level, and an increased energy splitting within the triangular potential well. The non-constant sensitivity is a direct result of the non-constant lifetime. Based on these findings, we provide an expression that allows us to calculate the sensitivity as a function of illumination power and bias voltage, show a way to model the time-resolved photocurrent, and determine the critical power up to which the resonant tunneling diode photodetector sensitivity can be assumed constant.

  4. Ion divergence in magnetically insulated diodes

    SciTech Connect

    Slutz, S.A.; Lemke, R.W.; Pointon, T.D.; Desjarlais, M.P.; Johnson, D.J.; Mehlhorn, T.A.; Filuk, A.; Bailey, J.

    1995-12-01

    Magnetically insulated ion diodes are being developed to drive inertial confinement fusion. Ion beam microdivergence must be reduced to achieve the very high beam intensities required to achieve this goal. Three-dimensional particle-in-cell simulations indicate that instability induced fluctuations can produce significant ion divergence during acceleration. These simulations exhibit a fast growing mode early in time, which has been identified as the diocotron instability. The divergence generated by this mode is modest due to the relatively high frequency (>1GHz). Later, a low-frequency low-phase-velocity instability develops. This instability couples effectively to the ions, since the frequency is approximately the reciprocal of the ion transit time, and can generate unacceptably large ion divergences (>30 mrad). Linear stability theory reveals that this mode requires perturbations parallel to the applied magnetic field and is related to the modified two stream instability. Measurements of ion density fluctuations and energy-momentum correlations have confirmed that instabilities develop in ion diodes and contribute to the ion divergence. In addition, spectroscopic measurements indicate that the ions have a significant transverse temperature very close to the emission surface. Passive lithium fluoride (LiF) anodes have larger transverse beam temperatures than laser irradiated active sources. Calculations of source divergence expected from the roughness of LiF surfaces and the possible removal of this layer is presented.

  5. The 60 GHz IMPATT diode development

    NASA Technical Reports Server (NTRS)

    Dat, Rovindra; Ayyagari, Murthy; Hoag, David; Sloat, David; Anand, Yogi; Whitely, Stan

    1986-01-01

    The objective is to develop 60 GHz IMPATT diodes suitable for communications applications. The performance goals of the 60 GHz IMPATT is 1W CW output power with a conversion efficiency of 15 percent and 10-year lifetime. The final design of the 60 GHz IMPATT structure evolved from computer simulations performed at the University of Michigan. The initial doping profile, involving a hybrid double-drift (HDD) design, was derived from a drift-diffusion model that used the static velocity-field characteristics for GaAs. Unfortunately, the model did not consider the effects of velocity undershoot and delay of the avalanche process due to energy relaxation. Consequently, the initial devices were oscillating at a much lower frequency than anticipated. With a revised simulation program that included the two effects given above, a second HDD profile was generated and was used as a basis for fabrication efforts. In the area of device fabrication, significant progress was made in epitaxial growth and characterization, wafer processing, and die assembly. The organo-metallic chemical vapor deposition (OMCVD) was used. Starting with a baseline X-Band IMPATT technology, appropriate processing steps were modified to satisfy the device requirements at V-Band. In terms of efficiency and reliability, the device requirements dictate a reduction in its series resistance and thermal resistance values. Qualitatively, researchers were able to reduce the diodes' series resistance by reducing the thickness of the N+ GaAs substrate used in its fabrication.

  6. Diode and Final Focus Simulations for DARHT

    NASA Astrophysics Data System (ADS)

    Hughes, Thomas P.; Welch, Dale R.; Carlson, Randolph L.

    1997-05-01

    We have used the numerical simulation codes uc(ivory,) uc(iprop) and uc(pbguns) to simulate beam dynamics in the diode and final focus of the 4 kA, 20 MV DARHT linear accelerator. A low emittance 4 MV, 4 kA source for a 4-pulse injector was designed using uc(ivory) and uc(pbguns.) Due to the long pulse length (four 70 ns pulses over 1 μsec), we have kept the field stress to < 200 kV/cm over the cathode electrode, and to ≈ 50 kV/cm on the radial insulator stacks. The normalized edge emittance produced by the diode optics is only ≈ 130 mm-mrad. In the final-focus region, we have used uc(iprop) to model the effect of ion emission from the target. The intense electric field of the beam at the 1 mm diameter focal spot produces substantial ion velocities, and, if the space-charge-limited current density can be supplied, significant focal spot degradation may occur due to ion space-charge. Calculations for the ITS test stand, which has a larger focal spot, show that the effect should be observable for H^+ and C^+ ion species. The effect may be lessened if there is insufficient ion density on the target to supply the space-charge-limited current density, or if the ion charge-to-mass ratio is sufficiently large.

  7. Solar magnetograph employing integrated diode arrays.

    PubMed

    Livingston, W C; Harvey, J; Slaughter, C; Trumbo, D

    1976-01-01

    A solar magnetograph employing as detectors a pair of self-scanning 512-element integrated diode arrays is described. Coupled to a 1.5-m telescope, photospheric flux as small as 5(10(16)) maxwells is detected, corresponding in intensity to DeltaI/I = 3(10(-4)) at lambda 0.8688 microm. Measured photometric properties of the diode array are given, including MTF as a function of wavelength, dark current as a function of temperature, completeness of readout, optical and electronic fixed-pattern noise. An integrating preamplifier is presented that achieves a measured noise, when connected to the array, equivalent to 950 electrons at the input for a bandwidth of 3(10(5)) Hz. These data provide a basis for an evaluation of the detector performance at low light levels beyond the needs of the magnetograph. Operated at near liquid nitrogen temperature, the noise and cooling characteristics indicate the detector has promise as a low light level sensor.

  8. Sensitivity of resonant tunneling diode photodetectors.

    PubMed

    Pfenning, Andreas; Hartmann, Fabian; Langer, Fabian; Kamp, Martin; Höfling, Sven; Worschech, Lukas

    2016-09-01

    We have studied the sensitivity of AlGaAs/GaAs double barrier resonant tunneling diode photodetectors with an integrated GaInNAs absorption layer for light sensing at the telecommunication wavelength of λ = 1.3 μm for illumination powers from pico- to microwatts. The sensitivity decreases nonlinearly with power. An illumination power increase of seven orders of magnitude leads to a reduction of the photocurrent sensitivity from S I  = 5.82 × 10(3) A W(-1) to 3.2 A W(-1). We attribute the nonlinear sensitivity-power dependence to an altered local electrostatic potential due to hole-accumulation that on the one hand tunes the tunneling current, but on the other hand affects the lifetime of photogenerated holes. In particular, the lifetime decreases exponentially with increasing hole population. The lifetime reduction results from an enhanced electrical field, a rise of the quasi-Fermi level, and an increased energy splitting within the triangular potential well. The non-constant sensitivity is a direct result of the non-constant lifetime. Based on these findings, we provide an expression that allows us to calculate the sensitivity as a function of illumination power and bias voltage, show a way to model the time-resolved photocurrent, and determine the critical power up to which the resonant tunneling diode photodetector sensitivity can be assumed constant. PMID:27454462

  9. Giant Electroresistive Ferroelectric Diode on 2DEG

    PubMed Central

    Kim, Shin-Ik; Jin Gwon, Hyo; Kim, Dai-Hong; Keun Kim, Seong; Choi, Ji-Won; Yoon, Seok-Jin; Jung Chang, Hye; Kang, Chong-Yun; Kwon, Beomjin; Bark, Chung-Wung; Hong, Seong-Hyeon; Kim, Jin-Sang; Baek, Seung-Hyub

    2015-01-01

    Manipulation of electrons in a solid through transmitting, storing, and switching is the fundamental basis for the microelectronic devices. Recently, the electroresistance effect in the ferroelectric capacitors has provided a novel way to modulate the electron transport by polarization reversal. Here, we demonstrate a giant electroresistive ferroelectric diode integrating a ferroelectric capacitor into two-dimensional electron gas (2DEG) at oxide interface. As a model system, we fabricate an epitaxial Au/Pb(Zr0.2Ti0.8)O3/LaAlO3/SrTiO3 heterostructure, where 2DEG is formed at LaAlO3/SrTiO3 interface. This device functions as a two-terminal, non-volatile memory of 1 diode-1 resistor with a large I+/I− ratio (>108 at ±6 V) and Ion/Ioff ratio (>107). This is attributed to not only Schottky barrier modulation at metal/ferroelectric interface by polarization reversal but also the field-effect metal-insulator transition of 2DEG. Moreover, using this heterostructure, we can demonstrate a memristive behavior for an artificial synapse memory, where the resistance can be continuously tuned by partial polarization switching, and the electrons are only unidirectionally transmitted. Beyond non-volatile memory and logic devices, our results will provide new opportunities to emerging electronic devices such as multifunctional nanoelectronics and neuromorphic electronics. PMID:26014446

  10. Angle sensitive single photon avalanche diode

    NASA Astrophysics Data System (ADS)

    Lee, Changhyuk; Johnson, Ben; Molnar, Alyosha

    2015-06-01

    An ideal light sensor would provide exact information on intensity, timing, location, and angle of incoming photons. Single photon avalanche diodes (SPADs) provide such desired high (single photon) sensitivity with precise time information and can be implemented at a pixel-scale to form an array to extract spatial information. Furthermore, recent work has demonstrated photodiode-based structures (combined with micro-lenses or diffraction gratings) that are capable of encoding both spatial and angular information of incident light. In this letter, we describe the implementation of such a grating structure on SPADs to realize a pixel-scale angle-sensitive single photon avalanche diode (A-SPAD) built in a standard CMOS process. While the underlying SPAD structure provides high sensitivity, the time information of the two layers of diffraction gratings above offers angle-sensitivity. Such a unique combination of SPAD and diffraction gratings expands the sensing dimensions to pave a path towards lens-less 3-D imaging and light-field time-of-flight imaging.

  11. Sensitivity of resonant tunneling diode photodetectors

    NASA Astrophysics Data System (ADS)

    Pfenning, Andreas; Hartmann, Fabian; Langer, Fabian; Kamp, Martin; Höfling, Sven; Worschech, Lukas

    2016-09-01

    We have studied the sensitivity of AlGaAs/GaAs double barrier resonant tunneling diode photodetectors with an integrated GaInNAs absorption layer for light sensing at the telecommunication wavelength of λ = 1.3 μm for illumination powers from pico- to microwatts. The sensitivity decreases nonlinearly with power. An illumination power increase of seven orders of magnitude leads to a reduction of the photocurrent sensitivity from S I = 5.82 × 103 A W-1 to 3.2 A W-1. We attribute the nonlinear sensitivity-power dependence to an altered local electrostatic potential due to hole-accumulation that on the one hand tunes the tunneling current, but on the other hand affects the lifetime of photogenerated holes. In particular, the lifetime decreases exponentially with increasing hole population. The lifetime reduction results from an enhanced electrical field, a rise of the quasi-Fermi level, and an increased energy splitting within the triangular potential well. The non-constant sensitivity is a direct result of the non-constant lifetime. Based on these findings, we provide an expression that allows us to calculate the sensitivity as a function of illumination power and bias voltage, show a way to model the time-resolved photocurrent, and determine the critical power up to which the resonant tunneling diode photodetector sensitivity can be assumed constant.

  12. Additional electric field in real trench MOS barrier Schottky diode

    NASA Astrophysics Data System (ADS)

    Mamedov, R. K.; Aslanova, A. R.

    2016-04-01

    In real trench MOS barrier Schottky diode (TMBS diode) additional electric field (AEF) the whole is formed in the near contact region of the semiconductor and its propagation space is limited with the barrier metal and the metallic electrodes of MOS structures. Effective potential barrier height TMBS diode is formed via resulting electric field of superposition AEF and electric field of space charge region (SCR) semiconductor. The dependence of the resulting electric field intensity of the distance towards the inside the semiconductor is nonlinear and characterized by a peak at a certain distance from the interface. The thickness of the SCR in TMBS diode becomes equal to the trench depth. Force and energy parameters of the AEF, and thus resulting electric field in the SCR region, become dependent on the geometric design parameters TMBS diode. The forward I-V characteristic TMBS diode is described by the thermionic emission theory as in conventional flat Scottky diode, and in the reverse bias, current is virtually absent at initial voltage, appears abruptly at a certain critical voltage.

  13. Active plasma source formation in the MAP diode

    SciTech Connect

    Lamppa, K.P.; Stinnett, R.W.; Renk, T.J.

    1995-07-01

    The Ion Beam Surface Treatment (IBEST) program is exploring using ion beams to treat the surface of a wide variety of materials. These experiments have shown that improved corrosion resistance, surface hardening, grain size modification, polishing and surface cleaning can all be achieved using a pulsed 0.4-0.8 MeV ion beam delivering 1-10 J/cm{sup 2}. The Magnetically-confined Anode Plasma (MAP) diode, developed at Cornell University, produces an active plasma which can be used to treat the surfaces of materials. The diode consists of a fast puff valve as the source of gas to produce the desired ions and two capacitively driven B-fields. A slow magnetic field is used for electron insulation and a fast field is used to both ionize the puffed gas and to position the plasma in the proper spatial location in the anode prior to the accelerator pulse. The relative timing between subsystems is an important factor in the effective production of the active plasma source for the MAP diode system. The MAP diode has been characterized using a Langmuir probe to measure plasma arrival times at the anode annulus for hydrogen gas. This data was then used to determine the optimum operating point for the MAP diode on RHEPP-1 accelerator shots. Operation of the MAP diode system to produce an ion beam of 500 kV, 12 kA with 40% efficiency (measured at the diode) has been demonstrated.

  14. Light-Emitting Diodes: Phosphorescent Nanocluster Light-Emitting Diodes (Adv. Mater. 2/2016).

    PubMed

    Kuttipillai, Padmanaban S; Zhao, Yimu; Traverse, Christopher J; Staples, Richard J; Levine, Benjamin G; Lunt, Richard R

    2016-01-13

    On page 320, R. R. Lunt and co-workers demonstrate electroluminescence from earth-abundant phosphorescent metal halide nanoclusters. These inorganic emitters, which exhibit rich photophysics combined with a high phosphorescence quantum yield, are employed in red and near-infrared light-emitting diodes, providing a new platform of phosphorescent emitters for low-cost and high-performance light-emission applications.

  15. Light-Emitting Diodes: Phosphorescent Nanocluster Light-Emitting Diodes (Adv. Mater. 2/2016).

    PubMed

    Kuttipillai, Padmanaban S; Zhao, Yimu; Traverse, Christopher J; Staples, Richard J; Levine, Benjamin G; Lunt, Richard R

    2016-01-13

    On page 320, R. R. Lunt and co-workers demonstrate electroluminescence from earth-abundant phosphorescent metal halide nanoclusters. These inorganic emitters, which exhibit rich photophysics combined with a high phosphorescence quantum yield, are employed in red and near-infrared light-emitting diodes, providing a new platform of phosphorescent emitters for low-cost and high-performance light-emission applications. PMID:26749470

  16. Effect of diode wavelength broadening in a diode end-pumped solid-state amplifier.

    PubMed

    Bourdet, Gilbert L; Casagrande, Olivier

    2007-05-10

    The effect of the spectral broadening in cw diode pumping and the wavelength shift in pulsed pumping of a solid-state laser is investigated theoretically. A very simple model allowing the computation of the reduction of the absorbed pump energy is developed. The results are applied to an ytterbium-doped solid-state laser and should be fruitful for amplifier and laser design. PMID:17446921

  17. Current transport mechanisms in mercury cadmium telluride diode

    NASA Astrophysics Data System (ADS)

    Gopal, Vishnu; Li, Qing; He, Jiale; He, Kai; Lin, Chun; Hu, Weida

    2016-08-01

    This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I-V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I-V characteristics have been modelled over a range of gate voltages from -9 V to -2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I-V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from -3 V to -5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

  18. Frequency stabilization of diode-laser-pumped solid state lasers

    NASA Technical Reports Server (NTRS)

    Byer, Robert L.

    1988-01-01

    The goal of the NASA Sunlite program is to fly two diode-laser-pumped solid-state lasers on the space shuttle and while doing so to perform a measurement of their frequency stability and temporal coherence. These measurements will be made by combining the outputs of the two lasers on an optical radiation detector and spectrally analyzing the beat note. Diode-laser-pumped solid-state lasers have several characteristics that will make them useful in space borne experiments. First, this laser has high electrical efficiency. Second, it is of a technology that enables scaling to higher powers in the future. Third, the laser can be made extremely reliable, which is crucial for many space based applications. Fourth, they are frequency and amplitude stable and have high temporal coherence. Diode-laser-pumped solid-state lasers are inherently efficient. Recent results have shown 59 percent slope efficiency for a diode-laser-pumped solid-state laser. As for reliability, the laser proposed should be capable of continuous operation. This is possible because the diode lasers can be remote from the solid state gain medium by coupling through optical fibers. Diode lasers are constructed with optical detectors for monitoring their output power built into their mounting case. A computer can actively monitor the output of each diode laser. If it sees any variation in the output power that might indicate a problem, the computer can turn off that diode laser and turn on a backup diode laser. As for stability requirements, it is now generally believed that any laser can be stabilized if the laser has a frequency actuator capable of tuning the laser frequency as far as it is likely to drift in a measurement time.

  19. Low-cost laser diode array

    DOEpatents

    Freitas, Barry L.; Skidmore, Jay A.

    1999-01-01

    A substrate is used to fabricate a low-cost laser diode array. A substrate is machined from an electrically insulative material that is thermally conductive, or two substrates can be bonded together in which the top substrate is electrically as well as thermally conductive. The substrate thickness is slightly longer than the cavity length, and the width of the groove is wide enough to contain a bar and spring (which secures the laser bar firmly along one face of the groove). The spring also provides electrical continuity from the backside of the bar to the adjacent metalization layer on the laser bar substrate. Arrays containing one or more bars can be formed by creating many grooves at various spacings. Along the groove, many bars can be adjoined at the edges to provide parallel electrical conduction. This architecture allows precise and predictable registration of an array of laser bars to a self-aligned microlens array at low cost.

  20. Destructive Single-Event Failures in Diodes

    NASA Technical Reports Server (NTRS)

    Casey, Megan C.; Gigliuto, Robert A.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Kim, Hak; Chen, Dakai; Phan, Anthony M.; LaBel, Kenneth A.

    2013-01-01

    In this summary, we have shown that diodes are susceptible to destructive single-event effects, and that these failures occur along the guard ring. By determining the last passing voltages, a safe operating area can be derived. By derating off of those values, rather than by the rated voltage, like what is currently done with power MOSFETs, we can work to ensure the safety of future missions. However, there are still open questions about these failures. Are they limited to a single manufacturer, a small number, or all of them? Is there a threshold rated voltage that must be exceeded to see these failures? With future work, we hope to answer these questions. In the full paper, laser results will also be presented to verify that failures only occur along the guard ring.

  1. Low-cost laser diode array

    DOEpatents

    Freitas, B.L.; Skidmore, J.A.

    1999-06-01

    A substrate is used to fabricate a low-cost laser diode array. A substrate is machined from an electrically insulative material that is thermally conductive, or two substrates can be bonded together in which the top substrate is electrically as well as thermally conductive. The substrate thickness is slightly longer than the cavity length, and the width of the groove is wide enough to contain a bar and spring (which secures the laser bar firmly along one face of the groove). The spring also provides electrical continuity from the backside of the bar to the adjacent metalization layer on the laser bar substrate. Arrays containing one or more bars can be formed by creating many grooves at various spacings. Along the groove, many bars can be adjoined at the edges to provide parallel electrical conduction. This architecture allows precise and predictable registration of an array of laser bars to a self-aligned microlens array at low cost. 19 figs.

  2. Microlens frames for laser diode arrays

    DOEpatents

    Skidmore, Jay A.; Freitas, Barry L.

    1999-01-01

    Monolithic microlens frames enable the fabrication of monolithic laser diode arrays and are manufactured inexpensively with high registration, and with inherent focal length compensation for any lens diameter variation. A monolithic substrate is used to fabricate a low-cost microlens array. The substrate is wet-etched or sawed with a series of v-grooves. The v-grooves can be created by wet-etching, by exploiting the large etch-rate selectivity of different crystal planes. The v-grooves provide a support frame for either cylindrical or custom-shaped microlenses. Because the microlens frames are formed by photolithographic semiconductor batch-processing techniques, they can be formed inexpensively over large areas with precise lateral and vertical registration. The v-groove has an important advantage for preserving the correct focus for lenses of varying diameter.

  3. Microlens frames for laser diode arrays

    DOEpatents

    Skidmore, J.A.; Freitas, B.L.

    1999-07-13

    Monolithic microlens frames enable the fabrication of monolithic laser diode arrays and are manufactured inexpensively with high registration, and with inherent focal length compensation for any lens diameter variation. A monolithic substrate is used to fabricate a low-cost microlens array. The substrate is wet-etched or sawed with a series of v-grooves. The v-grooves can be created by wet-etching, by exploiting the large etch-rate selectivity of different crystal planes. The v-grooves provide a support frame for either cylindrical or custom-shaped microlenses. Because the microlens frames are formed by photolithographic semiconductor batch-processing techniques, they can be formed inexpensively over large areas with precise lateral and vertical registration. The v-groove has an important advantage for preserving the correct focus for lenses of varying diameter. 12 figs.

  4. Mechanical diode: Comparing numerical and experimental characterizations

    SciTech Connect

    Sagartz, M.J.; Segalman, D.; Simmermacher, T.

    1998-02-01

    In this introductory work, joint compliance is studied in both a numerical and experimental setting. A simple bolted interface is used as the test article and compliance is measured for the joint in both compression and in tension. This simple interface is shown to exhibit a strong non-linearity near the transition from compression to tension (or vice-versa). Modeling issues pertaining to numerically solving for the compliance are addressed. It is shown that the model predictions, in spite of convergence being very sensitive to numerical artifacts of the interface model, are in good agreement with experimentally measured strains and joint compliances. The joint behavior is a mechanical analogy to a diode, i.e., in compression, the joint is very stiff, acting almost as a rigid link, while in tension the joint is relatively soft, acting as a spring.

  5. Contact Whiskers for Millimeter Wave Diodes

    NASA Technical Reports Server (NTRS)

    Kerr, A. R.; Grange, J. A.; Lichtenberger, J. A.

    1978-01-01

    Several techniques are investigated for making short conical tips on wires (whiskers) used for contacting millimeter-wave Schottky diodes. One procedure, using a phosphoric and chromic acid etching solution (PCE), is found to give good results on 12 microns phosphor-bronze wires. Full cone angles of 60 degrees-80 degrees are consistently obtained, compared with the 15 degrees-20 degrees angles obtained with the widely used sodium hydroxide etch. Methods are also described for cleaning, increasing the tip diameter (i.e. blunting), gold plating, and testing the contact resistance of the whiskers. The effects of the whisker tip shape on the electrical resistance, inductance, and capacitance of the whiskers are studied, and examples given for typical sets of parameters.

  6. Diode-laser-based therapy device

    NASA Astrophysics Data System (ADS)

    Udrea, Mircea V.; Nica, Adriana S.; Florian, Mariana; Poenaru, Daniela; Udrea, Gabriela; Lungeanu, Mihaela; Sporea, Dan G.; Vasiliu, Virgil V.; Vieru, Roxana

    2004-10-01

    A new therapy laser device is presented. The device consists of a central unit and different types of laser probes. The laser probe model SL7-650 delivers seven red (650 nm), 5 mW diode lasers convergent beams. The beams converge at about 30 cm in front of the laser probe and the irradiated area might be varied by simple displacement of the laser probe with respect to the target. The laser probe SL1-808 emits single infrared laser beam up to 500 mW. The efficiency of the use of this device in physiotherapy, and rheumatology, has been put into evidence after years of testing. Dermatology and microsurgery are users of infrared powerful laser probes. The device has successfully passed technical and clinical tests in order to be certified. The laser device design and some medical results are given.

  7. Optical design of organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Wang, Z. B.; Helander, M. G.; Xu, X. F.; Puzzo, D. P.; Qiu, J.; Greiner, M. T.; Lu, Z. H.

    2011-03-01

    Out-coupling of light from organic light emitting diodes (OLEDs) is a significant challenge for the application of OLEDs in solid state lighting. Most of the light is trapped in the stratified thin film structure and the glass substrate. In this study, an optical model is developed to simulate the optical electrical field for OLEDs with a stratified structure based on the dipole source term and transfer matrix approach. The exciton distribution is also considered in the proposed model. OLEDs with weak microcavity are selected to evaluate the model. Calculation of the electroluminescence spectrum, device efficiency as well as the angular dependence is shown to have a good agreement with the experimental data. Moreover, by using the weak microcavity design, an OLED of more than 70% improved efficiency is achieved.

  8. A single blue nanorod light emitting diode

    NASA Astrophysics Data System (ADS)

    Hou, Y.; Bai, J.; Smith, R.; Wang, T.

    2016-05-01

    We report a light emitting diode (LED) consisting of a single InGaN/GaN nanorod fabricated by a cost-effective top-down approach from a standard LED wafer. The device demonstrates high performance with a reduced quantum confined Stark effect compared with a standard planar counterpart fabricated from the same wafer, confirmed by optical and electrical characterization. Current density as high as 5414 A cm‑2 is achieved without significant damage to the device due to the high internal quantum efficiency. The efficiency droop is mainly ascribed to Auger recombination, which was studied by an ABC model. Our work provides a potential method for fabricating compact light sources for advanced photonic integrated circuits without involving expensive or time-consuming fabrication facilities.

  9. Diode laser welding of aluminum to steel

    SciTech Connect

    Santo, Loredana; Quadrini, Fabrizio; Trovalusci, Federica

    2011-05-04

    Laser welding of dissimilar materials was carried out by using a high power diode laser to join aluminum to steel in a butt-joint configuration. During testing, the laser scan rate was changed as well as the laser power: at low values of fluence (i.e. the ratio between laser power and scan rate), poor joining was observed; instead at high values of fluence, an excess in the material melting affected the joint integrity. Between these limiting values, a good aesthetics was obtained; further investigations were carried out by means of tensile tests and SEM analyses. Unfortunately, a brittle behavior was observed for all the joints and a maximum rupture stress about 40 MPa was measured. Apart from the formation of intermeltallic phases, poor mechanical performances also depended on the chosen joining configuration, particularly because of the thickness reduction of the seam in comparison with the base material.

  10. Graphite based Schottky diodes formed semiconducting substrates

    NASA Astrophysics Data System (ADS)

    Schumann, Todd; Tongay, Sefaattin; Hebard, Arthur

    2010-03-01

    We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). The fabrication can be as easy as allowing a dab of graphite paint to air dry on any one of the investigated semiconductors. Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.

  11. Terahertz optoelectronics with surface plasmon polariton diode.

    PubMed

    Vinnakota, Raj K; Genov, Dentcho A

    2014-05-09

    The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

  12. Resonant tunneling diode photodetector with nonconstant responsivity

    NASA Astrophysics Data System (ADS)

    Dong, Yu; Wang, Guanglong; Ni, Haiqiao; Chen, Jianhui; Gao, Fengqi; Li, Baochen; Pei, Kangming; Niu, Zhichuan

    2015-11-01

    Resonant tunneling diode with an In0.53Ga0.47As absorption layer is designed for light detection at 1550 nm. The responsivity of the detector is simulated by solving the Tsu-Esaki equation. The simulation results show that the responsivity of the detector is nonconstant. It decreases with the increment of the power density of the incident light. Samples of the detector are fabricated by molecular beam epitaxy. The experimental results show that the responsivity increases while the power density of the incident light decreases which agree with the simulation results. The responsivity reaches 4.8×108 A/(W/μm2) at room temperature and 5.0×109 A/(W/μm2) at 77 K when the power density of the incident light is 1×10-13 W/μm2.

  13. Rectification mechanism in diblock oligomer molecular diodes.

    PubMed

    Oleynik, I I; Kozhushner, M A; Posvyanskii, V S; Yu, L

    2006-03-10

    We investigated a mechanism of rectification in diblock oligomer diode molecules that have recently been synthesized and showed a pronounced asymmetry in the measured I-V spectrum. The observed rectification effect is due to the resonant nature of electron transfer in the system and the localization properties of bound state wave functions of resonant states of the tunneling electron interacting with an asymmetric molecule in an electric field. The asymmetry of the tunneling wave function is enhanced or weakened depending on the polarity of the applied bias. The conceptually new theoretical approach, the Green's function theory of sub-barrier scattering, is able to provide a physically transparent explanation of this rectification effect based on the concept of the bound state spectrum of a tunneling electron. The theory predicts the characteristic features of the I-V spectrum in qualitative agreement with experiment. PMID:16606295

  14. Terahertz imaging system with resonant tunneling diodes

    NASA Astrophysics Data System (ADS)

    Miyamoto, Tomoyuki; Yamaguchi, Atsushi; Mukai, Toshikazu

    2016-03-01

    We report a feasibility study of a terahertz imaging system with resonant tunneling diodes (RTDs) that oscillate at 0.30 THz. A pair of RTDs acted as an emitter and a detector in the system. Terahertz reflection images of opaque samples were acquired with our RTD imaging system. A spatial resolution of 1 mm, which is equal to the wavelength of the RTD emitter, was achieved. The signal-to-noise ratio (SNR) of the reflection image was improved by 6 dB by using polarization optics that reduced interference effects. Additionally, the coherence of the RTD enabled a depth resolution of less than 3 µm to be achieved by an interferometric technique. Thus, RTDs are an attractive candidate for use in small THz imaging systems.

  15. Light-emitting diodes for analytical chemistry.

    PubMed

    Macka, Mirek; Piasecki, Tomasz; Dasgupta, Purnendu K

    2014-01-01

    Light-emitting diodes (LEDs) are playing increasingly important roles in analytical chemistry, from the final analysis stage to photoreactors for analyte conversion to actual fabrication of and incorporation in microdevices for analytical use. The extremely fast turn-on/off rates of LEDs have made possible simple approaches to fluorescence lifetime measurement. Although they are increasingly being used as detectors, their wavelength selectivity as detectors has rarely been exploited. From their first proposed use for absorbance measurement in 1970, LEDs have been used in analytical chemistry in too many ways to make a comprehensive review possible. Hence, we critically review here the more recent literature on their use in optical detection and measurement systems. Cloudy as our crystal ball may be, we express our views on the future applications of LEDs in analytical chemistry: The horizon will certainly become wider as LEDs in the deep UV with sufficient intensity become available.

  16. Proton Degradation of Light-Emitting Diodes

    NASA Technical Reports Server (NTRS)

    Johnston, A. H.; Rax, B. G.; Selva, L. E.

    1997-01-01

    The severe degradation of optocouplers in space has been shown to be mainly due to proton displacement damage in the light-emitting diodes that are used within the optocouplers. However, a variety of LED technologies can be used in optocouplers and their sensitivity to proton displacement damage varies by about two orders of magnitude. Optocouplers are very simple hybrid devices, and the type of LED can be readily changed by the manufacturers with little cost impact. many optocoupler manufacturers purchase LEDs from outside sources with little knowledge or control of the manufacturing process used for the LED, leading to the possibility of very dramatic differences in radiation response (JPL has observed such differences for one type of optocoupler that is used in a hybrid power converter).

  17. Design, fabrication and testing of a thermal diode

    NASA Technical Reports Server (NTRS)

    Swerdling, B.; Kosson, R.

    1972-01-01

    Heat pipe diode types are discussed. The design, fabrication and test of a flight qualified diode for the Advanced Thermal Control Flight Experiment (ATFE) are described. The review covers the use of non-condensable gas, freezing, liquid trap, and liquid blockage techniques. Test data and parametric performance are presented for the liquid trap and liquid blockage techniques. The liquid blockage technique was selected for the ATFE diode on the basis of small reservoir size, low reverse mode heat transfer, and apparent rapid shut-off.

  18. Frequency-doubled monolithic master oscillator power amplifier laser diode

    SciTech Connect

    Waarts, R.; Sanders, S.; Parke, R.; Mehuys, D.; Lang, R.; O'Brien, S.; Dzurko, K.; Welch, D.; Scifres, D. )

    1993-10-01

    Single-pass frequency doubling of laser diodes extends the wavelength range of infrared laser diodes to blue-green wavelengths. The authors describe the first experiments of frequency doubling of a coherent, high-power, monolithic master oscillator power amplifier (M-MOPA) laser diode. The output from a 1-W M-MOPA is frequency doubled in a single pass through an 8.2-mm-long KNbO[sub 3] crystal. They obtained 3.7-mW diffraction-limited output power at a wavelength of 491 nm and demonstrated modulation at 20 MHz.

  19. Laser diode arrays for expanded mine detection capability

    NASA Astrophysics Data System (ADS)

    Crosby, Frank J.; Holloway, John H., Jr.; Petee, Danny A.; Stetson, Suzanne P.; Suiter, Harold R.; Tinsley, Ken R.

    2002-08-01

    A tactical unmanned aerial vehicle-size illumination system for enhanced mine detection capabilities has been designed, developed, integrated, and tested at the Coastal Systems Station. Airborne test flights were performed from June 12, 2001 to February 1, 2002. The Airborne Laser Diode Array Illuminator uses a single-wavelength compact laser diode array stack to provide illumination and is coupled with a pair of intensified CCD video cameras. The cameras were outfitted with various lenses and polarization filters to determine the benefits of each of the configurations. The first airborne demonstration of a laser diode illumination system is described and its effectiveness to perform nighttime mine detection operations is shown.

  20. Bipolar Host Materials for Organic Light-Emitting Diodes.

    PubMed

    Yook, Kyoung Soo; Lee, Jun Yeob

    2016-02-01

    It is important to balance holes and electrons in the emitting layer of organic light-emitting diodes to maximize recombination efficiency and the accompanying external quantum efficiency. Therefore, the host materials of the emitting layer should transport both holes and electrons for the charge balance. From this perspective, bipolar hosts have been popular as the host materials of thermally activated delayed fluorescent devices and phosphorescent organic light-emitting diodes. In this review, we have summarized recent developments of bipolar hosts and suggested perspectives of host materials for organic light-emitting diodes.

  1. Long-Lifetime Laser Materials For Effective Diode Pumping

    NASA Technical Reports Server (NTRS)

    Barnes, Norman P.

    1991-01-01

    Long quantum lifetimes reduce number of diodes required to pump. Pumping by laser diodes demonstrated with such common Nd laser materials as neodymium:yttrium aluminum garnet (Nd:YAG) and Nd:YLiF4, but such materials as Nd:LaF3, Nd:NaF.9YF3, and possibly Nd:YF3 more useful because of long lifetimes of their upper laser energy levels. Cost effectiveness primary advantage of solid-state laser materials having longer upper-laser-level lifetimes. Because cost of diodes outweighs cost of laser material by perhaps two orders of magnitude, cost reduced significantly.

  2. The recording and processing of pulsed laser diode spectra

    NASA Technical Reports Server (NTRS)

    Fuhr, Peter L.; Maufer, Thomas A.

    1987-01-01

    A system capable of measuring and statistically analyzing wavelength and intensity fluctuations in pulsed laser diode output beams has been developed. The snapshot wavelength-intensity performance of laser diodes emitting discrete short-duration optical pulse is determined by isolating and recording individual pulses. Statistical processing of the resultant data generates information about the magnitude and/or frequency of occurrence of power variations or wavelength fluctuations in narrow optical bands. The system configuration along with plots depicting results based on measurements taken for various laser diodes are presented.

  3. Photoluminescence excitation measurements using pressure-tuned laser diodes

    SciTech Connect

    Bercha, Artem; Ivonyak, Yurii; Mędryk, Radosław; Trzeciakowski, Witold A. Dybała, Filip; Piechal, Bernard

    2015-06-15

    Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available.

  4. Diode-pumped Alexandrite ring laser for lidar applications

    NASA Astrophysics Data System (ADS)

    Munk, A.; Jungbluth, B.; Strotkamp, M.; Hoffmann, H.-D.; Poprawe, R.; Höffner, J.

    2016-03-01

    We present design and performance data of a diode-pumped Q-switched Alexandrite ring laser in the millijoule regime, which is longitudinally pumped by laser diode bar modules in the red spectral range. As a first step, a linear resonator was designed and characterized in qcw operation as well as in Q-switched operation. Based on these investigations, two separate linear cavities were set up, each with one Alexandrite crystal longitudinally pumped by one diode module. The two cavities are fused together and form a ring cavity which yields up to 6 mJ pulse burst energy in the qcw regime at 770 nm.

  5. Avalanche diodes for the generation of coherent radiation

    NASA Technical Reports Server (NTRS)

    Penfield, P., Jr.

    1973-01-01

    Solid state devices and characterization, and optimum imbedding networks for realizing best performance were investigated along with a barrier injection transit time diode. These diodes were investigated for possible application as microwave amplifiers and oscillators. Measurements were made of diode noise figures in the frequency ranges of 4 - 6 GHz. Initial results indicate that a noise figure of 6 - 8 db may be possible. Optimum device structure and fabrication techniques necessary for low noise performance were investigated. Previously published documents on electrodynamics are included.

  6. A transient model of a cesium-barium diode

    SciTech Connect

    Luke, J.R.; El-Genk, M.S.

    1995-01-01

    In this work a transient model of a Cs-Ba diode is developed, and a series of experiments is performed using a diode equipped with Langmuir probes. The Langmuir probe data show that the electron energy distribution is non-Maxwellian at low discharge currents, indicating the presence of an electron beam from the emitter. Experimental results also showed that the plasma properties are non-homogeneous across the 1 mm diode gap; the electron temperature and plasma potential were higher near the emitter and the plasma density was higher near the collector. Experimental evidence is presented to show that the discharge contracts to a filament below the maximum thermal emission current.

  7. Graphene/GaN diodes for ultraviolet and visible photodetectors

    NASA Astrophysics Data System (ADS)

    Lin, Fang; Chen, Shaowen; Meng, Jie; Tse, Geoffrey; Fu, Xuewen; Xu, Fujun; Shen, Bo; Liao, Zhimin; Yu, Dapeng; Nanolab Team

    2015-03-01

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ~ mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  8. Study of PIN diode energy traps created by neutrons

    NASA Astrophysics Data System (ADS)

    Sopko, V.; Sopko, B.; Chren, D.; Dammer, J.

    2013-03-01

    Characterization of radiation defects is still ongoing and finds greater application in the increasing radiation doses on semiconductor detectors in experiments. Studying the changes of silicon PIN diode for high doses of radiation is the fundamental motivation for our measurements. In this article we describe the behavior of the PIN diode and development of the disorder caused by neutrons from a 252Cf and doses up to 8 Gy. The calibration curve for PIN diode shows the effect of disorders as the changes of the voltampere characteristics depending on the dose of neutron irradiation. The measured values for defects are in good agreement with created energy traps.

  9. High efficiency IMPATT diodes for 60 GHz intersatellite link applications

    NASA Technical Reports Server (NTRS)

    Haugland, E. J.

    1984-01-01

    Intersatellite links are expected to play an increasingly important role in future satellite systems. Improved components are required to properly utilize the wide bandwidth allocated for intersatellite link applications around 60 GHz. IMPATT diodes offer the highest potential performance as solid state power sources for a 60 GHz transmitter. Presently available devices do not have the desired power and efficiency. High efficiency, high power IMPATT diodes for intersatellite link applications are being developed by NASA and other government agencies. The development of high efficiency 60 GHz IMPATT diodes by NASA is described.

  10. Pulse power applications of silicon diodes in EML capacitive pulsers

    NASA Astrophysics Data System (ADS)

    Dethlefsen, Rolf; McNab, Ian; Dobbie, Clyde; Bernhardt, Tom; Puterbaugh, Robert; Levine, Frank; Coradeschi, Tom; Rinaldi, Vito

    1993-01-01

    Crowbar diodes are used for increasing the energy transfer from capacitive pulse forming networks. They also prevent voltage reversal on the energy storage capacitors. 52 mm diameter diodes with a 5 kV reverse blocking voltage, rated 40 kA were successfully used for the 32 MJ SSG rail gun. An uprated diode with increased current capability and a 15 kV reverse blocking voltage has been developed. Transient thermal analysis has predicted the current ratings for different pulse length. Analysis verification is obtained from destructive testing.

  11. Realization of high performance random laser diodes

    NASA Astrophysics Data System (ADS)

    Yu, S. F.

    2011-03-01

    For the past four decades, extensive studies have been concentrated on the understanding of the physics of random lasing phenomena in scattering media with optical gain. Although lasing modes can be excited from the mirrorless scattering media, the characteristics of high scattering loss, multiple-direction emission, as well as multiple-mode oscillation prohibited them to be used as practical laser cavities. Furthermore, due to the difficulty of achieving high optical gain under electrical excitation, electrical excitation of random lasing action was seldom reported. Hence, mirrorless random cavities have never been used to realize lasers for practical applications -- CD, DVD, pico-projector, etc. Nowadays, studies of random lasing are still limited to the scientific research. Recently, the difficulty of achieving `battery driven' random laser diodes has been overcome by using nano-structured ZnO as the random medium and the careful design of heterojunctions. This lead to the first demonstration of room-temperature electrically pumped random lasing action under continuity wave and pulsed operation. In this presentation, we proposed to realize an array of quasi-one dimensional ZnO random laser diodes. We can show that if the laser array can be manipulated in a way such that every individual random laser can be coupled laterally to and locked with a particular phase relationship to its adjacent neighbor, the laser array can obtain coherent addition of random modes. Hence, output power can be multiplied and one lasing mode will only be supported due to the repulsion characteristics of random modes. This work was supported by HK PolyU grant no. 1-ZV6X.

  12. High Intensity Organic Light-emitting Diodes

    NASA Astrophysics Data System (ADS)

    Qi, Xiangfei

    This thesis is dedicated to the fabrication, modeling, and characterization to achieve high efficiency organic light-emitting diodes (OLEDs) for illumination applications. Compared to conventional lighting sources, OLEDs enabled the direct conversion of electrical energy into light emission and have intrigued the world's lighting designers with the long-lasting, highly efficient illumination. We begin with a brief overview of organic technology, from basic organic semiconductor physics, to its application in optoelectronics, i.e. light-emitting diodes, photovoltaics, photodetectors and thin-film transistors. Due to the importance of phosphorescent materials, we will focus on the photophysics of metal complexes that is central to high efficiency OLED technology, followed by a transient study to examine the radiative decay dynamics in a series of phosphorescent platinum binuclear complexes. The major theme of this thesis is the design and optimization of a novel architecture where individual red, green and blue phosphorescent OLEDs are vertically stacked and electrically interconnected by the compound charge generation layers. We modeled carrier generation from the metal-oxide/doped organic interface based on a thermally assisted tunneling mechanism. The model provides insights to the optimization of a stacked OLED from both electrical and optical point of view. To realize the high intensity white lighting source, the efficient removal of heat is of a particular concern, especially in large-area devices. A fundamental transfer matrix analysis is introduced to predict the thermal properties in the devices. The analysis employs Laplace transforms to determine the response of the system to the combined effects of conduction, convection, and radiation. This perspective of constructing transmission matrices greatly facilitates the calculation of transient coupled heat transfer in a general multi-layer composite. It converts differential equations to algebraic forms, and

  13. Means for phase locking the outputs of a surface emitting laser diode array

    NASA Technical Reports Server (NTRS)

    Lesh, James R. (Inventor)

    1987-01-01

    An array of diode lasers, either a two-dimensional array of surface emitting lasers, or a linear array of stripe lasers, is phase locked by a diode laser through a hologram which focuses the output of the diode laser into a set of distinct, spatially separated beams, each one focused onto the back facet of a separate diode laser of the array. The outputs of the diode lasers thus form an emitted coherent beam out of the front of the array.

  14. Transient Processes in the GaAs-Based Microwave-PIN-Diodes

    NASA Astrophysics Data System (ADS)

    Ayzenshtat, G. I.; Yushchenko, A. Yu.; Bozhkov, V. G.

    2015-04-01

    The results of studies of transient characteristics of microwave-pin-diodes based on gallium arsenide are presented. It is shown that in these diodes, a transient process occurs in two stages resulting in a complicated pulse shape during the diode switching. The dependences of the effective lifetime on the diode radius and forward current value are measured. It is experimentally established that the effective lifetime in the diodes depends on the radius of the active region.

  15. High efficiency >26 W diode end-pumped Alexandrite laser.

    PubMed

    Teppitaksak, Achaya; Minassian, Ara; Thomas, Gabrielle M; Damzen, Michael J

    2014-06-30

    We show for the first time that multi-ten Watt operation of an Alexandrite laser can be achieved with direct red diode-pumping and with high efficiency. An investigation of diode end-pumped Alexandrite rod lasers demonstrates continuous-wave output power in excess of 26W, more than an order of magnitude higher than previous diode end-pumping systems, and slope efficiency 49%, the highest reported for a diode-pumped Alexandrite laser. Wavelength tuning from 730 to 792nm is demonstrated using self-seeding feedback from an external grating. Q-switched laser operation based on polarization-switching to a lower gain axis of Alexandrite has produced ~mJ-pulse energy at 1kHz pulse rate in fundamental TEM(00) mode.

  16. Organic light-emitting diodes: High-throughput virtual screening

    NASA Astrophysics Data System (ADS)

    Hirata, Shuzo; Shizu, Katsuyuki

    2016-10-01

    Computer networks, trained with data from delayed-fluorescence materials that have been successfully used in organic light-emitting diodes, facilitate the high-speed prediction of good emitters for display and lighting applications.

  17. A Direct Reading Thermometer Based on a Silicon Diode.

    ERIC Educational Resources Information Center

    Kirkup, L.; Tonthat, C.

    1998-01-01

    Describes a simple circuit based on an inexpensive quad operational amplifier that permits a direct-reading temperature instrument to be constructed using silicon diodes. Encourages the use of this equipment in introductory thermal experiments. (DDR)

  18. Passive fluidic diode for simple fluids using nested nanochannel structures.

    PubMed

    Mo, Jingwen; Li, Long; Wang, Jun; Li, Zhigang

    2016-03-01

    In this paper, we propose a moving part-free fluidic diode for simple fluids using nested nanochannels, which contain inner and outer channels of different lengths. Molecular dynamics simulations show that the fluidic diode accepts water flows in the forward direction and blocks flows in the backward direction in a wide range of pressure drops. The anisotropic flow rates are generated by the distinct activation pressures in different directions. In the forward direction, the activation pressure is low, which is determined by the infiltration pressure of the inner channel. In the backward direction, the activation pressure is quite high due to the capillary effects when flows are released from the inner to the outer channel. The pressure drop range for the fluidic diode can be varied by changing the channel size or surface wettability. The fluidic diode offers an alternative way for flow control in integrated micro- and nanofluidic devices. PMID:27078441

  19. Determining Planck's Constant Using a Light-emitting Diode.

    ERIC Educational Resources Information Center

    Sievers, Dennis; Wilson, Alan

    1989-01-01

    Describes a method for making a simple, inexpensive apparatus which can be used to determine Planck's constant. Provides illustrations of a circuit diagram using one or more light-emitting diodes and a BASIC computer program for simplifying calculations. (RT)

  20. Design of a plane-type bidirectional thermal diode

    SciTech Connect

    Chen, K.

    1988-11-01

    The design of a plane-type, bidirectional thermal diode is presented. This diode is composed of two vertical plates and several fluid-filled loops with their horizontal segments soldered to the vertical plates. This invention is simple in construction and low in cost. The direction of heat transfer in the invented thermal diode can be easily reversed. These features of the present invention make it very attractive to solar energy utilization. Natural convection analysis for thermosyphon operations was adopted for heat transfer calculations of the fluid-filled loops. A one-dimensional heat transfer analysis was employed to estimate the heat transfer rate and ratio of heat transfer rates of the diode under forward and reverse bias.

  1. Femtosecond soliton diode on heterojunction Bragg-grating structure

    NASA Astrophysics Data System (ADS)

    Deng, Zhigui; Lin, Haolin; Li, Hongji; Fu, Shenhe; Liu, Yikun; Xiang, Ying; Li, Yongyao

    2016-09-01

    We numerically propose a scheme for realizing an all-optical femtosecond soliton diode based on a tailored heterojunction Bragg grating, which is designed by two spatially asymmetric chirped cholesteric liquid crystals. Our simulations demonstrate that with the consideration of optical nonlinearity, not only the femtosecond diode effect with nonreciprocal transmission ratio up to 120 can be achieved but also the optical pulse evolving into soliton which maintains its shape during propagation through the sample is observed. Further, the influence of pulse width and the carrier wavelength to the femtosecond diode effect is also discussed in detail. Our demonstrations might suggest a direction for experimentally realizing the femtosecond soliton diode based on the cholesteric liquid crystals.

  2. Passive fluidic diode for simple fluids using nested nanochannel structures

    NASA Astrophysics Data System (ADS)

    Mo, Jingwen; Li, Long; Wang, Jun; Li, Zhigang

    2016-03-01

    In this paper, we propose a moving part-free fluidic diode for simple fluids using nested nanochannels, which contain inner and outer channels of different lengths. Molecular dynamics simulations show that the fluidic diode accepts water flows in the forward direction and blocks flows in the backward direction in a wide range of pressure drops. The anisotropic flow rates are generated by the distinct activation pressures in different directions. In the forward direction, the activation pressure is low, which is determined by the infiltration pressure of the inner channel. In the backward direction, the activation pressure is quite high due to the capillary effects when flows are released from the inner to the outer channel. The pressure drop range for the fluidic diode can be varied by changing the channel size or surface wettability. The fluidic diode offers an alternative way for flow control in integrated micro- and nanofluidic devices.

  3. Active stabilization of a diode laser injection lock

    NASA Astrophysics Data System (ADS)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-06-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  4. Active graphene-silicon hybrid diode for terahertz waves.

    PubMed

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-05-11

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

  5. Active stabilization of a diode laser injection lock.

    PubMed

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-06-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  6. Active graphene-silicon hybrid diode for terahertz waves

    NASA Astrophysics Data System (ADS)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-05-01

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

  7. Passive nanofluidic diode using non-uniform nanochannels

    NASA Astrophysics Data System (ADS)

    Mo, Jingwen; Li, Chu; Li, Long; Wang, Jun; Li, Zhigang

    2016-08-01

    In this work, we propose a nanofluidic diode for simple fluids using non-uniform nanochannels. Molecular dynamics simulations show that the fluidic diode allows water flows in the forward direction and blocks flows in the backward direction in a wide range of pressure drops. The unidirectional water flows are owing to the distinct activation pressures in different directions. In the forward (converging) direction, the activation pressure is small because of the relatively low capillary pressure and the water coalescence at the exit. In the backward direction, the activation pressure is high due to the high infiltration pressure. The pressure drop range for the fluidic diode can be varied by modifying the surface wettability, channel height, and/or the tilt angle of the channel. The fluidic diode can be used for flow control in integrated micro- and nanofluidic devices.

  8. Enhanced performance thermal diode via thermal boundary resistance at nanoscale

    NASA Astrophysics Data System (ADS)

    Tovar-Padilla, M.; Licea-Jimenez, L.; Pérez-Garcia, S. A.; Alvarez-Quintana, J.

    2015-08-01

    Hypothetically, a thermal rectifier is a device which leads a greater heat flux in one direction than another one, similarly as the electrical diode works for the electrical flux. Here, a drastic increment in the rectification factor has been obtained in nanoscale layered thermal diodes due to the effect of thermal boundary resistance present on an asymmetrical stack of nanofilms. Measurements show a thermal rectification factor as large as 3.3 under a temperature bias well below 1 K, which is the biggest thermal rectification factor reported at room temperature compared to previously reported thermal diodes so far. According to the direction of the applied heat flux, the observed impact of the thermal boundary resistance on the device is manifested through the presence of an asymmetric temperature rise along the heat transfer axis. Such effect provides an alternative route for the development of high performance thermal diodes.

  9. Analysis and Optimization of "Full-Length" Diodes

    SciTech Connect

    Schock, Alfred

    2012-01-19

    A method of analyzing the axial variation of the heat generation rate, temperature, voltage, current density and emitter heat flux in a thermionic converter is described. The method is particularly useful for the case of "long" diodes, each extending over the full length of the reactor core. For a given diode geometry and fuel distribution, the analysis combines a nuclear solution of the axial fission density profile with the iterative solution of four differential equations representing the thermal, electrical, and thermionic interactions within the diode. The digital computer program developed to solve these equations can also perform a design optimization with respect to lead resistance, load voltage, and emitter thickness, for a specified maximum emitter temperature. Typical results are presented, and the use of this analysis for predicting the diode operating characteristics is illustrated.

  10. Qualification of diode foil materials for excimer lasers

    NASA Astrophysics Data System (ADS)

    Anderson, R. G.; Shurter, R. P.; Rose, E. A.

    The Aurora facility at Los Alamos National Laboratory uses KrF excimer lasers to produce 248 nm light for inertial confinement fusion applications. Diodes in each amplifier produce relativistic electron beams to pump a Kr-F-Ar gas mixture. A foil is necessary to separate the vacuum diode from the laser gas. High tensile strength, high electron transmission, low ultraviolet reflectivity, and chemical compatibility with fluorine have been identified as requisite foil properties. Several different materials were acquired and tested for use as diode foils. Transmission and fluorine compatibility tests were performed using the Electron Gun Test Facility (EGTF) at Los Alamos. Off-line tests of tensile strength and reflectivity were performed. Titanium foil, which is commonly used as a diode foil, was found to generate solid and gaseous fluoride compounds, some of which are highly reactive in contact with water vapor.

  11. Narrowband alexandrite laser injection seeded with frequency dithered diode laser

    NASA Technical Reports Server (NTRS)

    Schwemmer, Geary; Lee, H. S.; Prasad, Coorg

    1991-01-01

    Narrowband radiation is produced from a pulsed alexandrite laser when injection seeded with the output of a low power, tunable, continuous wave single mode diode laser. Injection seeded power oscillators are easier to frequency stabilize than etalon narrowed lasers, are more efficient and less prone to optical damage. AlGaAs diode lasers are available with wavelengths from 760 to 770 nm in the oxygen A band that can be used for differential absorption lidar remote sensing of atmospheric pressure and temperature. Diodes with room temperature output at 740 nm may be cooled sufficiently to emit in the water vapor absorption band at 720-730 nm for humidity remote sensing. The diode laser linewidth of 200 MHz is sufficient to seed 2 or 3 longitudinal modes of the multi-transverse mode alexandrite laser, giving the pulsed laser a bandwidth of 0.007 to 0.014/cm.

  12. High efficiency >26 W diode end-pumped Alexandrite laser.

    PubMed

    Teppitaksak, Achaya; Minassian, Ara; Thomas, Gabrielle M; Damzen, Michael J

    2014-06-30

    We show for the first time that multi-ten Watt operation of an Alexandrite laser can be achieved with direct red diode-pumping and with high efficiency. An investigation of diode end-pumped Alexandrite rod lasers demonstrates continuous-wave output power in excess of 26W, more than an order of magnitude higher than previous diode end-pumping systems, and slope efficiency 49%, the highest reported for a diode-pumped Alexandrite laser. Wavelength tuning from 730 to 792nm is demonstrated using self-seeding feedback from an external grating. Q-switched laser operation based on polarization-switching to a lower gain axis of Alexandrite has produced ~mJ-pulse energy at 1kHz pulse rate in fundamental TEM(00) mode. PMID:24977887

  13. Passive fluidic diode for simple fluids using nested nanochannel structures.

    PubMed

    Mo, Jingwen; Li, Long; Wang, Jun; Li, Zhigang

    2016-03-01

    In this paper, we propose a moving part-free fluidic diode for simple fluids using nested nanochannels, which contain inner and outer channels of different lengths. Molecular dynamics simulations show that the fluidic diode accepts water flows in the forward direction and blocks flows in the backward direction in a wide range of pressure drops. The anisotropic flow rates are generated by the distinct activation pressures in different directions. In the forward direction, the activation pressure is low, which is determined by the infiltration pressure of the inner channel. In the backward direction, the activation pressure is quite high due to the capillary effects when flows are released from the inner to the outer channel. The pressure drop range for the fluidic diode can be varied by changing the channel size or surface wettability. The fluidic diode offers an alternative way for flow control in integrated micro- and nanofluidic devices.

  14. Tunnel diode circuit used as nanosecond-range time marker

    NASA Technical Reports Server (NTRS)

    Larsen, R. N.; Shear, E. B.

    1968-01-01

    Simple tunnel diode time marker circuit determines the time at which an event occurs in a scintillation crystal. It is capable of triggering at voltages as low as the noise level of a 10-stage PM tube.

  15. Active stabilization of a diode laser injection lock.

    PubMed

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-06-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed. PMID:27370428

  16. Diode-quad bridge for reactive transducers and FM discriminators

    NASA Technical Reports Server (NTRS)

    Harrison, D. R.; Dimeff, J.

    1972-01-01

    Diode-quad bridge circuit was developed for use with pressure-sensitive capacitive transducers, liquid-level measuring devices, proximity deflection sensors, and inductive displacement sensors. It may also be used as FM discriminator and as universal impedance bridge.

  17. Diode step stress program for JANTX1N5623

    NASA Technical Reports Server (NTRS)

    1979-01-01

    The effect of power/temperature step stress was studied when applied to the switching diode JANTX1N5623 manufactured by Semtech and Micro Semiconductor. Test results and failure analyses are included.

  18. Diode step stress testing program for JANTX1N5550

    NASA Technical Reports Server (NTRS)

    1979-01-01

    The effect was studied of power/temperature step stress when applied to the switching diode JANTX1N5550 manufactured by Semtech and Micro Semiconductor. The power/temperature stress tests are presented, and failure analyses are included.

  19. High-brightness fiber-coupled diode laser module

    NASA Astrophysics Data System (ADS)

    Dorsch, Friedhelm; Hennig, Petra; Nickel, Michael

    1998-05-01

    Based on a pair of step-mirrors for beam rearranging we coupled the emission of three high-power diode laser arrays into an optical fiber of 800 micrometer diameter. We compressed the fast axis collimated beams of three diode lasers in respect to their fast axes by means of a step prism and symmetrized the beam parameter product by reordering the radiation which is focused into a fiber then. By simple optimization a coupling efficiency of 70% can be obtained.

  20. High-power passive-cooled diode laser device

    NASA Astrophysics Data System (ADS)

    Bonati, Guido F.; Hennig, Petra; Rollig, Ullrich; Lorenzen, Dirk

    2003-06-01

    In order to achieve a thermally stable diode laser system based on high power diode laser bars, actively cooled heatsinks in form of micro channel heat sinks (MCHS) are used to face the power loss density of 106 W/m2 while requiring a minimum device volume. At identical junction temperature, passively cooled diode lasers are usually lower in power and the device volume is much higher due to the heat flux spreading design of passive heatsinks. However, as a matter of principle, the cooling with MCHS sinks requires a sealing between the heat sink itself and the system around. This sealing is usually achieved by o-rings, what can never avoid the transfer of vapor from the cooling system into the vicinity of the diode laser. Extreme requirements on availability, which lead to corresponding lifetime requirements, like in telecom applications, already require passively cooled diode lasers without any water in the inner system boundaries. For applications not requiring the extreme compact design volume of actively cooled diode lasers but requiring extreme lifetime or a minimum outlay on the periphery, we started looking into passively cooled diode laser stacks. To achieve a minimized temperature rise in the junction, we already developed a new copper-based heat sink, spreading the power loss in an optimized manner. Based on this heatsink, we started developing a heat exchanger with a low thermal resistance while keeping the water out of the inner system boundaries. The thermal resistance is low enough to run up to 12 passively cooled diode lasers on a low ambient temperature with a minimum of periphery requirements.

  1. Four logic states using two resonant tunnelling diodes

    NASA Astrophysics Data System (ADS)

    van Hoof, C.; Genoe, J.; van Hove, M.; van Rossum, M.; Mertens, R.

    1989-02-01

    Using a series connection of two specially designed resonant tunneling diodes, three negative differential resistance regions, resulting in four possible logic states, were observed. This behavior can be expanded, at least in theory, to n tunneling diodes, resulting in 2 exp n - 1 times switching and 2 exp n logic states. These new devices can be used for analog/digital conversion and multivalued logic or as multistate memory cells using only a minimum in device area.

  2. Low-Loss Coupler For Microwave Laser-Diode Modulation

    NASA Technical Reports Server (NTRS)

    Toda, Minoru

    1991-01-01

    Elimination of series resistor reduces loss of radio-frequency power. Quarter-wavelength matching section connected to transmission line eliminates need for resistor near laser diode and extends frequency response of system. Concept significantly extends relatively flat frequency response of laser diode or similar component, while simplifying design of its package, increasing amplitude of output signal, and reducing dissipation of heat by eliminating resistance. Phase characteristics approximately linear and any digital information transmitted not significantly altered.

  3. Avalanche-diode oscillator circuit with tuning at multiple frequencies

    NASA Technical Reports Server (NTRS)

    Parker, D.; Ablow, C. M.; Lee, R. E.; Karp, A.; Chambers, D. R.

    1971-01-01

    Detailed theoretical analysis of three different modes or types of high efficiency oscillation in a PIN diode are presented. For the TRAPATT mode in a PIN diode, it is shown that a traveling avalanche zone is not necessary to generate a dense trapped plasma. An economical computer program for TRAPATT oscillations in a PIN diode is described. Typical results of diode power, dc-to-RF conversion efficiency, and required circuit impedances are presented for several different current waveforms. A semianalytical solution for a second type of high efficiency mode in a PIN diode is derived assuming a rectangular current waveform. A quasi-static approximation is employed to derive a semianalytical solution for the voltage across a PIN diode in a third mode, where avalanching occurs during a major portion of a half cycle. Calculations for this mode indicate that the power increases proportionally to the magnitude of the drive current with a small decrease in efficiency relative to the ordinary TRAPATT mode. An analytical solution is also given for a PIN diode, where it is assumed that the ionization coefficient is a step function. It is shown that the step-ionization approximation permits one to draw possible patterns of avalanche region in the depletion layer as a function of time. A rule governing admissible patterns is derived and an example solution given for one admissible pattern. Preliminary experimental results on the high-efficiency oscillations are presented and discussed. Two different experimental circuits, which used channel-dropping filters to provide independent harmonic tuning, are described. Simpler circuits used to produce high-efficiency oscillations are discussed. Results of experiments using inexpensive Fairchild FD300 diodes are given.

  4. An equation for thermionic currents in vacuum energy conversion diodes

    NASA Astrophysics Data System (ADS)

    Marshall, Albert C.

    1998-11-01

    Apparent thermionic emission constants A* are commonly reported with values deviating from the theoretical value of 120 A/cm2 K2. For thermionic energy conversion diodes, using A* in the conventional equation for predicting net currents is found to violate basic physics laws and may result in poor predictive accuracy. A general equation for vacuum energy conversion diodes is proposed to prevent misuse of A*.

  5. Wavelength stabilized multi-kW diode laser systems

    NASA Astrophysics Data System (ADS)

    Köhler, Bernd; Unger, Andreas; Kindervater, Tobias; Drovs, Simon; Wolf, Paul; Hubrich, Ralf; Beczkowiak, Anna; Auch, Stefan; Müntz, Holger; Biesenbach, Jens

    2015-03-01

    We report on wavelength stabilized high-power diode laser systems with enhanced spectral brightness by means of Volume Holographic Gratings. High-power diode laser modules typically have a relatively broad spectral width of about 3 to 6 nm. In addition the center wavelength shifts by changing the temperature and the driving current, which is obstructive for pumping applications with small absorption bandwidths. Wavelength stabilization of high-power diode laser systems is an important method to increase the efficiency of diode pumped solid-state lasers. It also enables power scaling by dense wavelength multiplexing. To ensure a wide locking range and efficient wavelength stabilization the parameters of the Volume Holographic Grating and the parameters of the diode laser bar have to be adapted carefully. Important parameters are the reflectivity of the Volume Holographic Grating, the reflectivity of the diode laser bar as well as its angular and spectral emission characteristics. In this paper we present detailed data on wavelength stabilized diode laser systems with and without fiber coupling in the spectral range from 634 nm up to 1533 nm. The maximum output power of 2.7 kW was measured for a fiber coupled system (1000 μm, NA 0.22), which was stabilized at a wavelength of 969 nm with a spectral width of only 0.6 nm (90% value). Another example is a narrow line-width diode laser stack, which was stabilized at a wavelength of 1533 nm with a spectral bandwidth below 1 nm and an output power of 835 W.

  6. Efficient potassium diode pumped alkali laser operating in pulsed mode.

    PubMed

    Zhdanov, Boris V; Rotondaro, Matthew D; Shaffer, Michael K; Knize, Randall J

    2014-07-14

    This paper presents the results of our experiments on the development of an efficient hydrocarbon free diode pumped alkali laser based on potassium vapor buffered by He gas at 600 Torr. A slope efficiency of more than 50% was demonstrated with a total optical conversion efficiency of 30%. This result was achieved by using a narrowband diode laser stack as the pump source. The stack was operated in pulsed mode to avoid limiting thermal effects and ionization.

  7. Stacked, filtered multi-channel X-ray diode array

    NASA Astrophysics Data System (ADS)

    MacNeil, L. P.; Dutra, E. C.; Compton, S. M.; Jacoby, B. A.; Raphaelian, M. L.

    2015-08-01

    There are many types of X-ray diodes that are used for X-ray flux or spectroscopic measurements and for estimating the spectral shape of the VUV to soft X-ray spectrum. However, a need arose for a low cost, robust X-ray diode to use for experiments in hostile environments on multiple platforms, and for experiments that utilize forces that may destroy the diode(s). Since the typical proposed use required a small size with a minimal single line-of-sight, a parallel array could not be used. So, a stacked, filtered multi-channel X-ray diode array was developed, called the MiniXRD. To achieve significant cost savings while maintaining robustness and ease of field setup, repair, and replacement, we designed the system to be modular. The filters were manufactured in-house and cover the range from 450 eV to 5000 eV. To achieve the line-of-sight accuracy needed, we developed mounts and laser alignment techniques. We modeled and tested elements of the diode design at NSTec Livermore Operations (NSTec / LO) to determine temporal response and dynamic range, leading to diode shape and circuitry changes to optimize impedance and charge storage. We fielded individual and stacked systems at several national facilities as ancillary `ride-along' diagnostics to test and improve the design usability. We present the MiniXRD system performance which supports consideration as a viable low-cost alternative for multiple-channel low-energy X-ray measurements. This diode array is currently at Technical Readiness Level (TRL) 6.

  8. Elastomeric microfluidic diode and rectifier work with Newtonian fluids

    PubMed Central

    Liu, John; Chen, Yan; Taylor, Clive R.; Scherer, Axel; Kartalov, Emil P.

    2009-01-01

    We report on two microfluidic elastomeric autoregulatory devices—a diode and a rectifier. They exhibit physically interesting and complex nonlinear behaviors (saturation, bias-dependent resistance, and rectification) with a Newtonian fluid. Due to their autoregulatory properties, they operate without active external control. As a result, they enable increased microfluidic device density and overall system miniaturization. The demonstrated diode and rectifier would also be useful components in future microfluidic logic circuitry. PMID:20057932

  9. InGaAsSb thermophotovoltaic diode physics evaluation

    SciTech Connect

    Charache, G.W.; Baldasaro, P.F.; Danielson, L.R.

    1998-06-01

    The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

  10. Coherent and noncoherent low-power diodes in clinical practice

    NASA Astrophysics Data System (ADS)

    Antipa, Ciprian; Pascu, Mihail-Lucian; Stanciulescu, Viorica; Vlaiculescu, Mihaela; Ionescu, Elena; Bordea, Daniel

    1997-05-01

    Clinical efficacy of the low power laser (LPL) in medical treatments is still not well established. In a double blind, placebo controlled study, we tried to find out first which type of LPL is more efficient, and second if coherence is an important character for clinical efficacy. We treated 1228 patients having different rheumatic diseases, with low power diode, used as follows: A group: IR coherent diode, continuous emission, 3 mW power; B group: IR coherent diode, pulsed emission, output power about 3 mW; C group: IR noncoherent diode continuous emission 9 mW power; D group: both IR diode lasers (continuous or pulsed) and HeNe laser, continuous emission, 2 mW power; E group: placebo laser as control group. The energy dose used for every group was the same, as well as the clinical protocols. The positive results were: 66.16% for A group; 64.06% for B group; 48.87% for C group; 76.66% for D group, and 39.07% for E group. Finally, we showed that LPL is really efficient in the treatment of some rheumatic diseases, especially when red and IR diode laser were used in combination. The type of emission (continuous or pulsed) is not important, but coherence is obviously necessary for clinical efficacy.

  11. Modular package for cooling a laser diode array

    DOEpatents

    Mundinger, David C.; Benett, William J.; Beach, Raymond J.

    1992-01-01

    A laser diode array is disclosed that includes a plurality of planar packages and active cooling. The laser diode array may be operated in a long duty cycle, or in continuous operation. A laser diode bar and a microchannel heat sink are thermally coupled in a compact, thin planar package having the laser diode bar located proximate to one edge. In an array, a number of such thin planar packages are secured together in a stacked configuration, in close proximity so that the laser diodes are spaced closely. The cooling means includes a microchannel heat sink that is attached proximate to the laser bar so that it absorbs heat generated by laser operation. To provide the coolant to the microchannels, each thin planar package comprises a thin inlet manifold and a thin outlet manifold connected to an inlet corridor and an outlet corridor. The inlet corridor comprises a hole extending through each of the packages in the array, and the outlet corridor comprises a hole extending through each of the packages in the array. The inlet and outlet corridors are connected to a conventional coolant circulation system. The laser diode array with active cooling has application as an optical pump for high power solid state lasers. Further, it can be incorporated in equipment such as communications devices and active sensors, and in military and space applications, and it can be useful in applications having space constraints and energy limitations.

  12. Clinical comparison between the bleaching efficacy of light-emitting diode and diode laser with sodium perborate.

    PubMed

    Koçak, Sibel; Koçak, Mustafa Murat; Sağlam, Baran Can

    2014-04-01

    The aim of this clinical study was to test the efficacy of a light-emitting diode (LED) light and a diode laser, when bleaching with sodium perborate. Thirty volunteers were selected to participate in the study. The patients were randomly divided into two groups. The initial colour of each tooth to be bleached was quantified with a spectrophotometer. In group A, sodium perborate and distilled water were mixed and placed into the pulp chamber, and the LED light was source applied. In group B, the same mixture was used, and the 810 nm diode laser was applied. The final colour of each tooth was quantified with the same spectrophotometer. Initial and final spectrophotometer values were recorded. Mann-Whitney U-test and Wicoxon tests were used to test differences between both groups. Both devices successfully whitened the teeth. No statistical difference was found between the efficacy of the LED light and the diode laser.

  13. Environmental testing of a diode-laser-pumped Nd:YAG laser and a set of diode-laser-arrays

    NASA Technical Reports Server (NTRS)

    Hemmati, H.; Lesh, J. R.

    1989-01-01

    Results of the environmental test of a compact, rigid and lightweight diode-laser-pumped Nd:YAG laser module are discussed. All optical elements are bonded onto the module using space applicable epoxy, and two 200 mW diode laser arrays for pump sources are used to achieve 126 mW of CW output with about 7 percent electrical-to-optical conversion efficiency. This laser assembly and a set of 20 semiconductor diode laser arrays were environmentally tested by being subjected to vibrational and thermal conditions similar to those experienced during launch of the Space Shuttle, and both performed well. Nevertheless, some damage to the laser front facet in diode lasers was observed. Significant degradation was observed only on lasers which performed poorly in the life test. Improvements in the reliability of the Nd:YAG laser are suggested.

  14. Dead Time of Single Photon Avalanche Diodes

    NASA Astrophysics Data System (ADS)

    Neri, L.; Tudisco, S.; Musumeci, F.; Scordino, A.; Fallica, G.; Mazzillo, M.; Zimbone, M.

    2011-06-01

    Single Photon Avalanche Diode (SPAD) is the new generation of Geiger-Muller counter device developed in semiconductor technology [S. Privitera et al. Sensors Journal, vol 8 Iss. 8 (2008) 4636; S. Tudisco et al. IEEE Sensors Journal vol 8 ISS 7-8 (2008) 1324; S. Cova et al. Applied Optics 35 (1996) 1956]. Physical dead time model and noise production process has been analyzed and their corrections have been performed [S.H. Lee, R.P. Gardner, M. Jae, Nucl. Instr. and Meth. in Phys. Res. B 263 (2007) 46]. We have been able to extract the real amount of incident photon rate up to 10 7cps using a device with 0.97μs total deadtime. We also developed the equation of the noise count rate vs incoming photon rate, supported by Montecarlo simulation and experimental data. We marked the difference between dark rate and noise count rate, and introduced the noise rate inside the hybrid deadtime equation used for SPAD device.

  15. Geometrical study of nanoscale field effect diodes

    NASA Astrophysics Data System (ADS)

    Manavizadeh, Negin; Raissi, Farshid; Asl Soleimani, Ebrahim; Pourfath, Mahdi

    2012-04-01

    In this paper, the previously proposed side-contacted field effect diode (FED) is carefully studied and its characteristic is compared against that of a modified FED and a metal oxide semiconductor field effect transistor (MOSFET). The influences of the body thickness, each gate length and access resistance are investigated. The figures of merit including intrinsic gate delay time and energy-delay product, which represent the speed and switching energy of the device, respectively, are studied. Our results highlight that FEDs are good candidates for obtaining a high Ion/Ioff ratio with a relatively short delay time compared to conventional FEDs and MOSFETs. We show that by a careful scaling of the source-drain region, the access resistance can be optimized. We demonstrate that a well-tempered device with a high switching response and a lower energy consumption can be achieved with a 30 nm body thickness, 85 nm source-drain length and a drain gate length longer than the source gate length.

  16. MMIC Replacement for Gunn Diode Oscillators

    NASA Technical Reports Server (NTRS)

    Crowe, Thomas W.; Porterfield, David

    2011-01-01

    An all-solid-state replacement for high-frequency Gunn diode oscillators (GDOs) has been proposed for use in NASA s millimeter- and submillimeter-wave sensing instruments. Highly developed microwave oscillators are used to achieve a low-noise and highly stable reference signal in the 10-40-GHz band. Compact amplifiers and high-power frequency multipliers extend the signal to the 100-500-GHz band with minimal added phase noise and output power sufficient for NASA missions. This technology can achieve improved output power and frequency agility, while maintaining phase noise and stability comparable to other GDOs. Additional developments of the technology include: a frequency quadrupler to 145 GHz with 18 percent efficiency and 15 percent fixed tuned bandwidth; frequency doublers featuring 124, 240, and 480 GHz; an integrated 874-GHz subharmonic mixer with a mixer noise temperature of 3,000 K DSB (double sideband) and mixer conversion loss of 11.8 dB DSB; a high-efficiency frequency tripler design with peak output power of 23 mW and 14 mW, and efficiency of 16 and 13 percent, respectively; millimeter-wave integrated circuit (MMIC) power amplifiers to the 30-40 GHz band with high DC power efficiency; and an 874-GHz radiometer suitable for airborne observation with state-of-the-art sensitivity at room temperature and less than 5 W of total power consumption.

  17. Thermally enhanced blue light-emitting diode

    NASA Astrophysics Data System (ADS)

    Xue, Jin; Zhao, Yuji; Oh, Sang-Ho; Herrington, William F.; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji; Ram, Rajeev J.

    2015-09-01

    We investigate thermoelectric pumping in wide-bandgap GaN based light-emitting diodes (LEDs) to take advantage of high junction temperature rather than avoiding the problem of temperature-induced efficiency droop through external cooling. We experimentally demonstrate a thermally enhanced 450 nm GaN LED, in which nearly fourfold light output power is achieved at 615 K (compared to 295 K room temperature operation), with nearly no reduction in the wall-plug efficiency (i.e., electrical-optical energy conversion efficiency) at bias V <ℏω/q . The LED is shown to work in a mode similar to a thermodynamic heat engine operating with charged carriers pumped into the active region by a combination of electrical work and Peltier heat (phonons) drawn from the lattice. In this optimal operating regime at 615 K, the LED injection current (3.26 A/cm2) is of similar magnitude to the operating point of common high power GaN based LEDs (5-35 A/cm2). This result suggests the possibility of removing bulky heat sinks in current high power LED products thus realizing a significant cost reduction for solid-state lighting.

  18. Light-Emitting Diodes: Learning New Physics

    NASA Astrophysics Data System (ADS)

    Planinšič, Gorazd; Etkina, Eugenia

    2015-04-01

    This is the third paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide the readers with the description of experiments and pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper, published in the February 2014 issue of TPT,1 provided an overview of possible uses of LEDs in a physics course. The second paper2 discussed how one could help students learn the foundational aspects of LED physics through a scaffolded inquiry approach, specifically the ISLE cycle. The goals of this paper are to show how the activities described in our second paper help to deepen student understanding of physics and to broaden student knowledge by exploring new phenomena such as fluorescence. Activities described in this paper are suitable for advanced high school courses, introductory courses for physics and engineering majors, courses for prospective physics teachers, and professional development programs.

  19. Flight demonstration of laser diode initiated ordnance

    NASA Technical Reports Server (NTRS)

    Boucher, Craig J.; Schulze, Norman R.

    1995-01-01

    A program has been initiated by NASA Headquarters to validate laser initiated ordnance in flight applications. The primary program goal is to bring together a team of government and industry members to develop a laser initiated ordnance system having the test and analysis pedigree to be flown on launch vehicles. The culmination of this effort was a flight of the Pegasus launch vehicle which had two fin rockets initiated by this laser system. In addition, a laser initiated ordnance squib was fired into a pressure bomb during thrusting flight. The complete ordnance system comprising a laser diode firing unit, fiber optic cable assembly, laser initiated detonator, and laser initiated squib was designed and built by The Ensign Bickford Company. The hardware was tested to the requirements of the Pegasus launch vehicle and integrated into the vehicle by The Ensign Bickford Company and the Orbital Sciences Corporation. Discussions include initial program concept, contract implementation, team member responsibilities, analysis results, vehicle integration, safing architecture, ordnance interfaces, mission timeline and telemetry data. A complete system description, summary of the analyses, the qualification test results, and the results of flight are included.

  20. Experimental Demonstration of a Thermoacoustic Diode

    NASA Astrophysics Data System (ADS)

    Biwa, Tetsushi; Nakamura, Hiroki; Hyodo, Hiroaki

    2016-06-01

    When an acoustic wave passes through short narrow channels in a regenerator having an axial temperature difference, the acoustic power is amplified for the waves going from cold to hot, whereas it is damped for the waves going in the opposite direction. This study applies such asymmetric wave propagation to demonstrate a thermoacoustic diode, which plays the role of the acoustic counterpart to an optical isolator. Four regenerators having the same longitudinal temperature difference are aligned in series to make four-stage amplification and damping of the acoustic power possible. This alignment leads to the enlarged difference between the acoustic power gains in the forward and backward propagation directions, even with a moderate temperature difference. Furthermore, by introducing the acoustical impedance-matching unit, the power-reflection coefficient is kept as low as 0.017 in forward propagation. The results show that the power-transmission coefficients in the forward and backward directions, respectively, reach 0.98 and 0.023, which means that the power-transmission ratio is 16 dB.

  1. Aggregation in organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Meyer, Abigail

    Organic light emitting diode (OLED) technology has great potential for becoming a solid state lighting source. However, there are inefficiencies in OLED devices that need to be understood. Since these inefficiencies occur on a nanometer scale there is a need for structural data on this length scale in three dimensions which has been unattainable until now. Local Electron Atom Probe (LEAP), a specific implementation of Atom Probe Tomography (APT), is used in this work to acquire morphology data in three dimensions on a nanometer scale with much better chemical resolution than is previously seen. Before analyzing LEAP data, simulations were used to investigate how detector efficiency, sample size and cluster size affect data analysis which is done using radial distribution functions (RDFs). Data is reconstructed using the LEAP software which provides mass and position data. Two samples were then analyzed, 3% DCM2 in C60 and 2% DCM2 in Alq3. Analysis of both samples indicated little to no clustering was present in this system.

  2. Shunt switched resistor regulator with diode snubber

    SciTech Connect

    Ekstrand, J.

    1989-03-21

    This patent describes a shunt switched resistor regulator power supply for supplying a variable amount of power to a load comprising: a rectifier means for accepting AC input voltage and converting it to DC output voltage at a positive and a negative terminal; first, second, third, and fourth nodes wherein the first and the fourth nodes are coupled to the positive and negative terminals, respectively; a current limiting resistor coupled between the first and second nodes; a capacitor coupled between the second and fourth nodes; a resistor having parasitic inductance coupled between the second and third nodes; a switch coupled between the third and fourth nodes; and a diode having its anode coupled to the third node and having its cathode coupled to the second node; means coupled to the load terminals for sensing the power being delivered to the load and for controlling the switch to have a duty cycle which results in the desired load current flowing through and a desired voltage appearing across the load in accordance with control input signals received at a control input.

  3. Optical communication with semiconductor laser diodes

    NASA Technical Reports Server (NTRS)

    Davidson, F.

    1987-01-01

    A 25 megabit/sec direct detection optical communication system that used Q=4 PPM signalling was constructed and its performance measured under laboratory conditions. The system used a single-mode AlGaAs laser diode transmitter and low noise silicon avalanche photodiode (APD) photodetector. Comparison of measured performance with the theoretical revealed that modeling the APD output as a Gaussian process under conditions of negligible background radiation and low (less than 10 to the -12 power A) APD bulk leakage currents leads to substantial underestimates of optimal APD gain to use and overestimates of system bit error probability. A procedure is given to numerically compute system performance which uses the more accurate Webb's Approximation of the exact Conradi distribution for the APD ouput signal that does not require excessive amounts of computer time (a few minutes of VAX 8600 CPU time per system operating point). Examples are given which illustrate the breakdown of the Gaussian approximation in assessing system performance. This system achieved a bit error probability of 10 to the -6 power at a received signal energy corresponding to an average of 60 absorbed photons/bit and optimal APD gain of 700.

  4. Optical communication with semiconductor laser diodes

    NASA Technical Reports Server (NTRS)

    Davidson, F.

    1988-01-01

    Slot timing recovery in a direct detection optical PPM communication system can be achieved by processing the photodetector waveform with a nonlinear device whose output forms the input to a phase lock group. The choice of a simple transition detector as the nonlinearity is shown to give satisfactory synchronization performance. The rms phase error of the recovered slot clock and the effect of slot timing jitter on the bit error probability were directly measured. The experimental system consisted of an AlGaAs laser diode (lambda = 834 nm) and a silicon avalanche photodiode (APD) photodetector and used Q=4 PPM signaling operated at a source data rate of 25 megabits/second. The mathematical model developed to characterize system performance is shown to be in good agreement with actual performance measurements. The use of the recovered slot clock in the receiver resulted in no degradation in receiver sensitivity compared to a system with perfect slot timing. The system achieved a bit error probability of 10 to the minus 6 power at received signal energies corresponding to an average of less than 60 detected photons per information bit.

  5. Diode laser absorption spectroscopy of lithium isotopes

    NASA Astrophysics Data System (ADS)

    Olivares, Ignacio E.; González, Iván A.

    2016-10-01

    We study Doppler-limited laser intensity absorption, in a thermal lithium vapor containing 7Li and 6Li atoms in a 9 to 1 ratio, using a narrow-linewidth single-longitudinal-mode tunable external cavity diode laser at the wavelength of 670.8 nm. The lithium vapor was embedded in helium or argon buffer gas. The spectral lineshapes were rigorously predicted for D_1 and D_2 for the lithium 6 and 7 isotope lines using reduced optical Bloch equations, specifically derived, from a density matrix analysis. Here, a detailed comparison is provided of the predicted lineshapes with the measured 7Li-D_2, 7Li-D_1, 6Li-D_2 and 6Li-D_1 lines, in the case of high vapor density and with intensity above the saturation intensity. To our knowledge, this is the first time that such detailed comparison is reported in the open literature. The calculations were also extended to saturated absorption spectra and compared to measured Doppler-free 7Li-D_2 and 6Li-D_2 hyperfine lines.

  6. Charge carrier thermalization in organic diodes

    PubMed Central

    van der Kaap, N. J.; Koster, L. J. A.

    2016-01-01

    Charge carrier mobilities of organic semiconductors are often characterized using steady-state measurements of space charge limited diodes. These measurements assume that charge carriers are in a steady-state equilibrium. In reality, however, energetically hot carriers are introduces by photo-excitation and injection into highly energetic sites from the electrodes. These carriers perturb the equilibrium density of occupied states, and therefore change the overall charge transport properties. In this paper, we look into the effect of energetically hot carriers on the charge transport in organic semiconductors using steady state kinetic Monte Carlo simulations. For injected hot carriers in a typical organic semiconductor, rapid energetic relaxation occurs in the order of tens of nanoseconds, which is much faster than the typical transit time of a charge carrier throught the device. Furthermore, we investigate the impact of photo-generated carriers on the steady-state mobility. For a typical organic voltaic material, an increase in mobility of a factor of 1.1 is found. Therefore, we conclude that the impact of energetically hot carriers on normal device operation is limited. PMID:26791095

  7. VBG controlled narrow bandwidth diode laser arrays

    NASA Astrophysics Data System (ADS)

    Levy, Joseph; Feeler, Ryan; Junghans, Jeremy

    2012-03-01

    Northrop Grumman Cutting Edge Optronics has developed large kilowatt class lensed laser diode arrays with subnanometer spectral width using Volume Bragg Grating (VBG) reflectors. Using these CW arrays with 100W bars at 885nm, excellent absorption in Nd:YAG is achieved, with lower thermal aberration than can be attained with 808nm pumps. The additional cost of the VBG reflectors and their alignment is partially offset by the much broader wavelength tolerance that is allowed in the unlocked array enhancing bar yield. Furthermore, the center wavelength of the arrays exhibit lower temperature sensitivity allowing the arrays to be operated over a wider current or temperature range than arrays without wavelength control. While there is an efficiency penalty associated with the addition of VBGs of 5-8%, it is more than compensated for by enhanced absorption, especially when used with narrowband absorption lines, such as 885nm in Nd:YAG. An overview of the design and manufacturing issues for arrays that are wavelength-locked with VBGs is presented along with the effect of post-construction hard UV exposure.

  8. Sensitized fluorescence in organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Nguyen, C.; Ingram, G.; Lu, Z. H.

    2014-10-01

    We have studied the effects of incorporating phosphorescent sensitizers into fluorescent organic-light emitting diode (OLED) devices. In the emissive layer of this system, the host material is co-doped at low concentrations with both a phosphorescent and a fluorescent dye. The purpose of the phosphorescent dopant is to capture both singlet and triplet excitons from the host material and to transfer them into the singlet state of the fluorescent dye. Ideally, recombination of excitons and the emission of light would occur solely on the fluorescent dye. This sensitized fluorescent system can potentially achieve 100% internal quantum efficiency as both triplet and singlet states are being harvested. We have observed an almost two-fold improvement in the quantum efficiency of a sensitized fluorescent system, utilizing rubrene as the fluorescent dye and Ir(ppy)2(acac) as the sensitizer, versus a standard rubrene-based host-guest system. By testing various dopant concentrations, the optimal emissive layer composition for this system was determine to be ~2 wt.% rubrene and ~7 wt.% Ir(ppy)2(acac) in a CBP host.

  9. Applications of microlens-conditioned laser diode arrays

    SciTech Connect

    Beach, R.J.; Emanuel, M.A.; Freitas, B.L.

    1995-01-01

    The ability to condition the radiance of laser diodes using shaped-fiber cylindrical-microlens technology has dramatically increased the number of applications that can be practically engaged by diode laser arrays. Lawrence Livermore National Laboratory (LLNL) has actively pursued optical efficiency and engineering improvements in this technology in an effort to supply large radiance-conditioned laser diode array sources for its own internal programs. This effort has centered on the development of a modular integrated laser diode packaging technology with the goal of enabling the simple and flexible construction of high average power, high density, two-dimensional arrays with integrated cylindrical microlenses. Within LLNL, the principal applications of microlens-conditioned laser diode arrays are as high intensity pump sources for diode pumped solid state lasers (DPSSLs). A simple end-pumping architecture has been developed and demonstrated that allows the radiation from microlens-conditioned, two-dimensional diode array apertures to be efficiently delivered to the end of rod lasers. To date, pump powers as high as 2.5 kW have been delivered to 3 mm diameter laser rods. Such high power levels are critical for pumping solid state lasers in which the terminal laser level is a Stark level lying in the ground state manifold. Previously, such systems have often required operation of the solid state gain medium at low temperature to freeze out the terminal laser Stark level population. The authors recently developed high intensity pump sources overcome this difficulty by effectively pumping to much higher inversion levels, allowing efficient operation at or near room temperature. Because the end-pumping technology is scalable in absolute power, the number of rare-earth ions and transitions that can be effectively accessed for use in practical DPSSL systems has grown tremendously.

  10. Respiratory complications after diode-laser-assisted tonsillotomy.

    PubMed

    Fischer, Miloš; Horn, Iris-Susanne; Quante, Mirja; Merkenschlager, Andreas; Schnoor, Jörg; Kaisers, Udo X; Dietz, Andreas; Kluba, Karsten

    2014-08-01

    Children with certain risk factors, such as comorbidities or severe obstructive sleep apnea syndrome (OSAS) are known to require extended postoperative monitoring after adenotonsillectomy. However, there are no recommendations available for diode-laser-assisted tonsillotomy. A retrospective chart review of 96 children who underwent diode-laser-assisted tonsillotomy (07/2011-06/2013) was performed. Data for general and sleep apnea history, power of the applied diode-laser (λ = 940 nm), anesthesia parameters, the presence of postoperative respiratory complications and postoperative healing were evaluated. After initially uncomplicated diode-laser-assisted tonsillotomy, an adjustment of post-anesthesia care was necessary in 16 of 96 patients due to respiratory failure. Respiratory complications were more frequent in younger children (3.1 vs. 4.0 years, p = 0.049, 95 % CI -1.7952 to -0.0048) and in children who suffered from nocturnal apneas (OR = 5.00, p < 0.01, 95 % CI 1.4780-16.9152) or who suffered from relevant comorbidities (OR = 4.84, p < 0.01, 95 % CI 1.5202-15.4091). Moreover, a diode-laser power higher than 13 W could be identified as a risk factor for the occurrence of a postoperative oropharyngeal edema (OR = 3.45, p < 0.01, 95 % CI 1.3924-8.5602). Postoperative respiratory complications should not be underestimated in children with sleep-disordered breathing (SDB). Therefore, children with SDB, children with comorbidities or children younger than 3 years should be considered "at risk" and children with confirmed moderate to severe OSAS should be referred to a PICU following diode-laser-assisted tonsillotomy. We recommend a reduced diode-laser power (<13 W) to reduce oropharyngeal edema.

  11. Ablation of dentin by irradiation of violet diode laser

    NASA Astrophysics Data System (ADS)

    Hatayama, H.; Kato, J.; Akashi, G.; Hirai, Y.; Inoue, A.

    2006-02-01

    Several lasers have been used for clinical treatment in dentistry. Among them, diode lasers are attractive because of their compactness compared with other laser sources. Near-infrared diode lasers have been practically used for cutting soft tissues. Because they penetrate deep to soft tissues, they cause sufficiently thick coagulation layer. However, they aren't suitable for removal of carious dentin because absorption by components in dentin is low. Recently, a violet diode laser with a wavelength of 405nm has been developed. It will be effective for cavity preparation because dentin contains about 20% of collagen whose absorption coefficient at a violet wavelength is larger than that at a near-infrared wavelength. In this paper, we examined cutting performance of the violet diode laser for dentin. To our knowledge, there have been no previous reports on application of a violet laser to dentin ablation. Bovine teeth were irradiated by continuous wave violet diode laser with output powers in a range from 0.4W to 2.4W. The beam diameter on the sample was about 270μm and an irradiation time was one second. We obtained the crater ablated at more than an output power of 0.8W. The depth of crater ranged from 20μm at 0.8W to 90μm at 2.4W. Furthermore, the beam spot with an output power of 1.7W was scanned at a speed of 1mm/second corresponding to movement of a dentist's hand in clinical treatment. Grooves with the depth of more than 50μm were also obtained. From these findings, the violet diode laser has good potential for cavity preparation. Therefore, the violet diode laser may become an effective tool for cavity preparation.

  12. Construction of an Extended Cavity Tunable Diode Laser

    NASA Astrophysics Data System (ADS)

    Deveney, Edward; Metcalf, Harold; Noe, John

    2001-03-01

    A diverse and vast amount of experiments at the forefront of experimental physics typically use diode lasers as an integral part of their arrangement. However, researchers who use unmodified commercially available diode lasers run into several complications. The laser diode that is purchased is often not of the same wavelength as is advertised; thus the researcher’s desired wavelength is not met. Because the semiconductor has such a short external cavity, it is very sensitive to the injection current, changes in room temperature, and has a large linewidth making it harder to tune. To obtain a finely tuned diode laser, temperature and current controlling of the diode laser are used in conjunction with an extended semiconductor cavity. This is achieved by mounting the hermetically sealed assembly atop a thermoelectric cooler, which uses the Peltier effect. Furthermore, the variation of the injection current may be used as an additional control for the wavelength output of the diode. The power range of 70 mW as controlled by the injection current adjusts the wavelength by a span of only 4 nanometers. The extended cavity consists of a diffraction grating adhered to a mirror mount and is used for grating feedback. That in turn is used to reduce the linewidth sufficiently enough in order to provide much better tunability. In the next three weeks, the tunable diode laser will be specifically applied to research in the areas of Second Harmonic Generation in a PPLN Crystal and Saturated Rubidium Spectroscopy. This study was supported in part by NSF grant PHY99-12312.

  13. Reliability of high power laser diodes with external optical feedback

    NASA Astrophysics Data System (ADS)

    Bonsendorf, Dennis; Schneider, Stephan; Meinschien, Jens; Tomm, Jens W.

    2016-03-01

    Direct diode laser systems gain importance in the fields of material processing and solid-state laser pumping. With increased output power, also the influence of strong optical feedback has to be considered. Uncontrolled optical feedback is known for its spectral and power fluctuation effects, as well as potential emitter damage. We found that even intended feedback by use of volume Bragg gratings (VBG) for spectral stabilization may result in emitter lifetime reduction. To provide stable and reliable laser systems design, guidelines and maximum feedback ratings have to be found. We present a model to estimate the optical feedback power coupled back into the laser diode waveguide. It includes several origins of optical feedback and wide range of optical elements. The failure thresholds of InGaAs and AlGaAs bars have been determined not only at standard operation mode but at various working points. The influence of several feedback levels to laser diode lifetime is investigated up to 4000h. The analysis of the semiconductor itself leads to a better understanding of the degradation process by defect spread. Facet microscopy, LBIC- and electroluminescence measurements deliver detailed information about semiconductor defects before and after aging tests. Laser diode protection systems can monitor optical feedback. With this improved understanding, the emergency shutdown threshold can be set low enough to ensure laser diode reliability but also high enough to provide better machine usability avoiding false alarms.

  14. Giant Thermal Rectification from Polyethylene Nanofiber Thermal Diodes.

    PubMed

    Zhang, Teng; Luo, Tengfei

    2015-09-01

    The realization of phononic computing is held hostage by the lack of high-performance thermal devices. Here, it is shown through theoretical analysis and molecular dynamics simulations that unprecedented thermal rectification factors (as large as 1.20) can be achieved utilizing the phase-dependent thermal conductivity of polyethylene nanofibers. More importantly, such high thermal rectifications only need very small temperature differences (<20 °C) across the device, which is a significant advantage over other thermal diodes which need temperature biases on the order of the operating temperature. Taking this into consideration, it is shown that the dimensionless temperature-scaled rectification factors of the polymer nanofiber diodes range from 12 to 25-much larger than those of other thermal diodes (<8). The polymer nanofiber thermal diode consists of a crystalline portion whose thermal conductivity is highly phase-sensitive and a cross-linked portion which has a stable phase. Nanoscale size effect can be utilized to tune the phase transition temperature of the crystalline portion, enabling thermal diodes capable of operating at different temperatures. This work will be instrumental to the design of high performance, inexpensive, and easily processible thermal devices, based on which thermal circuits can be built to ultimately enable phononic computing.

  15. Millimeter-wave diode-grid frequency doubler

    NASA Technical Reports Server (NTRS)

    Jou, Christina F.; Luhmann, Neville C., Jr.; Lam, Wayne W.; Stolt, Kjell S.; Chen, Howard Z.

    1988-01-01

    Monolithic diode grids were fabricated on 2-cm square gallium-arsenide wafers in a proof-of-principle test of a quasi-optical varactor millimeter-wave frequency multiplier array concept. An equivalent circuit model based on a transmission-line analysis of plane wave illumination was applied to predict the array performance. The doubler experiments were performed under far-field illumination conditions. A second-harmonic conversion efficiency of 9.5 percent and output powers of 0.5 W were achieved at 66 GHz when the diode grid was pumped with a pulsed source at 33 GHz. This grid had 760 Schottky-barrier varactor diodes. The average series resistance was 27 ohms, the minimum capacitance was 18 fF at a reverse breakdown voltage of -3 V. The measurements indicate that the diode grid is a feasible device for generating watt-level powers at millimeter frequencies and that substantial improvement is possible by improving the diode breakdown voltage.

  16. Method and system for homogenizing diode laser pump arrays

    DOEpatents

    Bayramian, Andy J

    2013-10-01

    An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

  17. Wavelength-Agile External-Cavity Diode Laser for DWDM

    NASA Technical Reports Server (NTRS)

    Pilgrim, Jeffrey S.; Bomse, David S.

    2006-01-01

    A prototype external-cavity diode laser (ECDL) has been developed for communication systems utilizing dense wavelength- division multiplexing (DWDM). This ECDL is an updated version of the ECDL reported in Wavelength-Agile External- Cavity Diode Laser (LEW-17090), NASA Tech Briefs, Vol. 25, No. 11 (November 2001), page 14a. To recapitulate: The wavelength-agile ECDL combines the stability of an external-cavity laser with the wavelength agility of a diode laser. Wavelength is modulated by modulating the injection current of the diode-laser gain element. The external cavity is a Littman-Metcalf resonator, in which the zeroth-order output from a diffraction grating is used as the laser output and the first-order-diffracted light is retro-reflected by a cavity feedback mirror, which establishes one end of the resonator. The other end of the resonator is the output surface of a Fabry-Perot resonator that constitutes the diode-laser gain element. Wavelength is selected by choosing the angle of the diffracted return beam, as determined by position of the feedback mirror. The present wavelength-agile ECDL is distinguished by design details that enable coverage of all 60 channels, separated by 100-GHz frequency intervals, that are specified in DWDM standards.

  18. Method and system for homogenizing diode laser pump arrays

    DOEpatents

    Bayramian, Andrew James

    2016-05-03

    An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

  19. Diode laser power module for beamed power transmission

    NASA Technical Reports Server (NTRS)

    Choi, S. H.; Williams, M. D.; Lee, J. H.; Conway, E. J.

    1991-01-01

    Recent progress with powerful, efficient, and coherent monolithic diode master-oscillator/power-amplifier (M-MOPA) systems is promising for the development of a space-based diode laser power station. A conceptual design of a 50-kW diode laser power module was made for space-based power stations capable of beaming coherent power to the moon, Martian rovers, or other satellites. The laser diode power module consists of a solar photovoltaic array or nuclear power source, diode laser arrays (LDAs), a phase controller, beam-steering optics, a thermal management unit, and a radiator. Thermal load management and other relevant aspects of the system (such as power requirements and system mass) are considered. The 50-kW power module described includes the highest available efficiency of LD M-MOPA system to date. However, the overall efficiency of three amplifier stages, including the coupling efficiency, turns out to be 55.5 percent. Though a chain of PA stages generates a high-power coherent beam, there is a penalty due to the coupling loss between stages. The specific power of the 50-kW module using solar power is 6.58 W/kg.

  20. In vivo dosimetry with silicon diodes in total body irradiation

    NASA Astrophysics Data System (ADS)

    Oliveira, F. F.; Amaral, L. L.; Costa, A. M.; Netto, T. G.

    2014-02-01

    The aim of this work is the characterization and application of silicon diode detectors for in vivo dosimetry in total body irradiation (TBI) treatments. It was evaluated the diode response with temperature, dose rate, gantry angulations and field size. A maximum response variation of 2.2% was obtained for temperature dependence. The response variation for dose rate and angular was within 1.2%. For field size dependence, the detector response increased with field until reach a saturation region, where no more primary radiation beam contributes for dose. The calibration was performed in a TBI setup. Different lateral thicknesses from one patient were simulated and then the calibration factors were determined by means of maximum depth dose readings. Subsequent to calibration, in vivo dosimetry measurements were performed. The response difference between diode readings and the prescribed dose for all treatments was below 4%. This difference is in agreement as recommended by the International Commission on Radiation Units and Measurements (ICRU), which is ±5%. The present work to test the applicability of a silicon diode dosimetry system for performing in vivo dose measurements in TBI techniques presented good results. These measurements demonstrated the value of diode dosimetry as a treatment verification method and its applicability as a part of a quality assurance program in TBI treatments.

  1. Overview on new diode lasers for defense applications

    NASA Astrophysics Data System (ADS)

    Neukum, Joerg

    2012-11-01

    Diode lasers have a broad wavelength range, from the visible to beyond 2.2μm. This allows for various applications in the defense sector, ranging from classic pumping of DPSSL in range finders or target designators, up to pumping directed energy weapons in the 50+ kW range. Also direct diode applications for illumination above 1.55μm, or direct IR countermeasures are of interest. Here an overview is given on some new wavelengths and applications which are recently under discussion. In this overview the following aspects are reviewed: • High Power CW pumps at 808 / 880 / 940nm • Pumps for DPAL - Diode Pumped Alkali Lasers • High Power Diode Lasers in the range < 1.0 μm • Scalable Mini-Bar concept for high brightness fiber coupled modules • The Light Weight Fiber Coupled module based on the Mini-Bar concept Overall, High Power Diode Lasers offer many ways to be used in new applications in the defense market.

  2. Application of AXUV diode detectors at ASDEX Upgrade

    SciTech Connect

    Bernert, M. Eich, T.; Burckhart, A.; Fuchs, J. C.; Giannone, L.; Kallenbach, A.; McDermott, R. M.; Sieglin, B.

    2014-03-15

    In the ASDEX Upgrade tokamak, a radiation measurement for a wide spectral range, based on semiconductor detectors, with 256 lines of sight and a time resolution of 5μs was recently installed. In combination with the foil based bolometry, it is now possible to estimate the absolutely calibrated radiated power of the plasma on fast timescales. This work introduces this diagnostic based on AXUV (Absolute eXtended UltraViolet) n-on-p diodes made by International Radiation Detectors, Inc. The measurement and the degradation of the diodes in a tokamak environment is shown. Even though the AXUV diodes are developed to have a constant sensitivity for all photon energies (1 eV-8 keV), degradation leads to a photon energy dependence of the sensitivity. The foil bolometry, which is restricted to a time resolution of less than 1 kHz, offers a basis for a time dependent calibration of the diodes. The measurements of the quasi-calibrated diodes are compared with the foil bolometry and found to be accurate on the kHz time scale. Therefore, it is assumed, that the corrected values are also valid for the highest time resolution (200 kHz). With this improved diagnostic setup, the radiation induced by edge localized modes is analyzed on fast timescales.

  3. Device having two optical ports for switching applications

    DOEpatents

    Rosen, Ayre; Stabile, Paul J.

    1991-09-24

    A two-sided light-activatable semiconductor switch device having an optical port on each side thereof. The semiconductor device may be a p-i-n diode or of bulk intrinsic material. A two ported p-i-n diode, reverse-biased to "off" by a 1.3 kV dc power supply, conducted 192 A when activated by two 1 kW laser diode arrays, one for each optical port.

  4. Reliability of High Power Laser Diode Arrays Operating in Long Pulse Mode

    NASA Technical Reports Server (NTRS)

    Amzajerdian, Farzin; Meadows, Byron L.; Barnes, Bruce W.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.; Baker, Nathaniel R.

    2006-01-01

    Reliability and lifetime of quasi-CW laser diode arrays are greatly influenced by their thermal characteristics. This paper examines the thermal properties of laser diode arrays operating in long pulse duration regime.

  5. Plasma-filled applied B ion diode experiments using a plasma opening switch

    SciTech Connect

    Renk, T.J. )

    1994-12-15

    In order for a plasma opening switch (POS) to open quickly and transfer power efficiently from an inductively charged vacuum transmission line to an applied B ion diode, the load impedance of the ion diode may be required to have an initial low impedance phase. A plasma-filled diode has such an impedance history. To test the effect of a plasma-filled diode on POS-diode coupling, a drifting plasma was introduced from the cathode side of an applied B ion diode operated on the LION accelerator (1.5 MV, 4 [Omega], 40 ns) at Cornell University. This plasma readily crossed the 2.1 T magnetic insulation field of the diode, and resulted in both increased diode electrical power, and an increased ability of the ion beam to remove material from a target. The plasma did not appear to have a noticeable effect on local beam steering angle.

  6. Physical modeling of millimetre wave signal reflection from forward biased PIN diodes

    NASA Astrophysics Data System (ADS)

    Jackson, R. P.; Mitchell, S. J. N.; Fusco, V.

    2010-02-01

    This paper examines the DC power requirements of PIN diodes which, with suitable applied DC bias, have the potential to reflect or to permit transmission of millimetre wave energy through them by the process of inducing a semiconductor plasma layer in the I region. The study is conducted using device level simulation of SOI and bulk PIN diodes and reflection modeling based on the Drude conduction model. We examined five diode lengths (60-140 μm) and seven diode thicknesses (4-100 μm). Simulation output for the diodes of varying thicknesses was subsequently used in reflection modelling to assess their performance for 100 GHz operation. It is shown that substantially high DC input power is required in order to induce near total reflection in SOI PIN diodes at 100 GHz. Thinner devices consume less DC power, but reflect less incident radiation for given input power. SOI diodes are shown to have improved carrier confinement compared with bulk diodes.

  7. Thermally widely tunable laser diodes with distributed feedback

    NASA Astrophysics Data System (ADS)

    Todt, R.; Jacke, T.; Meyer, R.; Amann, M.-C.

    2005-07-01

    A thermally widely tunable buried heterostructure laser diode with distributed feedback (DFB) is demonstrated. This device requires only two tuning currents for wide quasicontinuous wavelength tuning, thereby facilitating easy and fast device calibration and control. Furthermore, being based on regular DFB laser fabrication technology, it is readily manufacturable. By using window structures instead of cleaved facets plus antireflection coatings, a regular tuning behavior has been achieved for a DFB-like widely tunable laser diode with only two tuning currents. The laser diode covers the wavelength range between 1552 and 1602 nm. Requiring side-mode suppression ratio and output power above 30 dB and 10 mW, respectively, a wavelength range of 43 nm is accessible.

  8. Thermally widely tunable laser diodes with distributed feedback

    SciTech Connect

    Todt, R.; Jacke, T.; Meyer, R.; Amann, M.-C.

    2005-07-11

    A thermally widely tunable buried heterostructure laser diode with distributed feedback (DFB) is demonstrated. This device requires only two tuning currents for wide quasicontinuous wavelength tuning, thereby facilitating easy and fast device calibration and control. Furthermore, being based on regular DFB laser fabrication technology, it is readily manufacturable. By using window structures instead of cleaved facets plus antireflection coatings, a regular tuning behavior has been achieved for a DFB-like widely tunable laser diode with only two tuning currents. The laser diode covers the wavelength range between 1552 and 1602 nm. Requiring side-mode suppression ratio and output power above 30 dB and 10 mW, respectively, a wavelength range of 43 nm is accessible.

  9. Thermal diode utilizing asymmetric contacts to heat baths.

    PubMed

    Komatsu, Teruhisa S; Ito, Nobuyasu

    2010-01-01

    We propose a simple thermal diode passively acting as a rectifier of heat current. The key design of the diode is the size asymmetry of the areas in contact with two distinct heat baths. The heat-conducting medium is liquid, inside of which gaslike regions are induced depending on the applied conditions. Simulating nanoscale systems of this diode, the rectification of heat current is demonstrated. If the packing density of the medium and the working regime of temperature are properly chosen, the heat current is effectively cut off when the heat bath with narrow contact is hotter, but it flows normally under opposite temperature conditions. In the former case, the gaslike region is induced in the system and it acts as a thermal insulator because it covers the entire narrow area of contact with the bath.

  10. Four channel Laser Firing Unit using laser diodes

    NASA Technical Reports Server (NTRS)

    Rosner, David, Sr.; Spomer, Edwin, Sr.

    1994-01-01

    This paper describes the accomplishments and status of PS/EDD's (Pacific Scientific/Energy Dynamics Division) internal research and development effort to prototype and demonstrate a practical four channel laser firing unit (LFU) that uses laser diodes to initiate pyrotechnic events. The LFU individually initiates four ordnance devices using the energy from four diode lasers carried over the fiber optics. The LFU demonstrates end-to-end optical built in test (BIT) capabilities. Both Single Fiber Reflective BIT and Dual Fiber Reflective BIT approaches are discussed and reflection loss data is presented. This paper includes detailed discussions of the advantages and disadvantages of both BIT approaches, all-fire and no-fire levels, and BIT detection levels. The following topics are also addressed: electronic control and BIT circuits, fiber optic sizing and distribution, and an electromechanical shutter type safe/arm device. This paper shows the viability of laser diode initiation systems and single fiber BIT for typing military applications.

  11. A novel physical parameter extraction approach for Schottky diodes

    NASA Astrophysics Data System (ADS)

    Wang, Hao; Chen, Xing; Xu, Guang-Hui; Huang, Ka-Ma

    2015-07-01

    Parameter extraction is an important step for circuit simulation methods that are based on physical models of semiconductor devices. A novel physical parameter extraction approach for Schottky diodes is proposed in this paper. By employing a set of analytical formulas, this approach extracts all of the necessary physical parameters of the diode chip in a unique way. It then extracts the package parasitic parameters with a curve-fitting method. To validate the proposed approach, a model HSMS-282c commercial Schottky diode is taken as an example. Its physical parameters are extracted and used to simulate the diode’s electrical characteristics. The simulated results based on the extracted parameters are compared with the measurements and a good agreement is obtained, which verifies the feasibility and accuracy of the proposed approach. Project supported by the Joint Fund of the National Natural Science Foundation of China and the China Academy of Engineering Physics (Grant No. U1230112).

  12. Aspects of SiC diode assembly using Ag technology

    NASA Astrophysics Data System (ADS)

    Mysliwiec, Marcin; Guziewicz, Marek; Kisiel, Ryszard

    2013-07-01

    The aim of our paper is to consider the possibility of applying pure Ag technology for assembly of SiC Schottky diode into a ceramic package able to work at temperatures up to 350°C. Ag micropowder was used for assembly SiC structure to DBC interposer of the ceramic package. Ag wire bonds as well as flip-chip technology using Ag balls were used as material for interconnection systems. The parameters of I-V characteristics were used as a quality factor to determine the Schottky diode after hermetization into ceramic package as well as after ageing in air at 350°C in comparison with characteristics of bare SiC diode.

  13. Cryogenic thermometry with a common diode: Type BAS16

    NASA Astrophysics Data System (ADS)

    Rijpma, A. P.; ter Brake, H. J. M.

    2006-01-01

    Cryogenic test experiments often require a large number of temperatures to be monitored. In order to reduce cost, we investigated the feasibility of low-cost common diodes. We chose the Philips BAS16 diode in a type SOT23 package. By means of Stycast 2850FT, these diodes were glued into alumina holders. In total, 20 sensors were assembled and tested. With an excitation current of 100 μA and considering a temperature range from 50 K to room temperature, a quadratic least-squares-fit was obtained: T = 486.1 - 363.7 V - 38.3 V2. All sensors agreed with this fit within an error of 1.3 K.

  14. Shunt Diode Designs in Li/cf Shuttle Batteries

    NASA Technical Reports Server (NTRS)

    Miller, D.; Higgins, R.

    1984-01-01

    Although Li/CF cells and batteries have an excellent safety record, they are included with other battery systems that require additional safety precautions. One precaution suggested is the inclusion of shunt diodes into these batteries. The benefits of this addition are examined. All cells tested at elevated temperatures vent regardless of length of time between being fully discharged and reversed or inclusion of the diode in the system. Cells discharged at ambient temperatures all show a relatively quick reversal, but stabilize at voltages that are high enough that the diodes are not functioning. Cells tested at depressed temperatures reverse the deepest of all cells tested, with the deepest reversal occurring very early in the test and voltages recovering to above -0.60 volts near the end of the tests. Anode limited cells will eliminate the venting during hot reversal.

  15. Experimental study of the diode pumped alkali laser (DPAL)

    NASA Astrophysics Data System (ADS)

    Endo, Masamori; Nagaoka, Ryuji; Nagaoka, Hiroki; Nagai, Toru; Wani, Fumio

    2014-02-01

    A small-scale cesium diode-pumped alkali laser (DPAL) apparatus has been developed for fundamental researches. A commercial laser diode with volume Bragg grating outcoupler is used to pump the gain cell longitudinally. Both windows of the gain cell are set at Brewster's angle for minimum loss and maximum durability. Output coupling coefficient is continuously variable from 13% to 85% by the slanted quartz plate outcoupler inserted in the optical resonator. Small signal gain is measured with a laser diode probe at various gain cell temperatures. A 6.5 W continuouswave output with 56% optical-to-optical conversion efficiency (based on the absorbed power) has been achieved. A numerical simulation code is developed and its calculation results are in good agreement with the experiments.

  16. Application of revised thermionic theory to MTC diodes

    NASA Astrophysics Data System (ADS)

    Marshall, Albert C.; King, Donald B.

    2001-02-01

    An advanced thermionic theory has been developed that focuses on the correct method for incorporating electron reflection when predicting net currents and voltages in vacuum type thermionic diodes. The theory, now complete for vacuum diodes, includes revised equations for predicting net currents, space charge, internal and external electron spectra, and electron cooling. More recently, the theory was extended to include inhomogeneous (patchy) electrode surfaces. The new theory has been used successfully to predict current-voltage curves for Microminiature Thermionic Converter (MTC) diodes. The new theory suggests that the MTC electrodes, at this stage of development, are very patchy and probably exhibit quantum reflection by a dipole on the electrode surface. The excellent agreement of the new theory (and poor agreement of the original theory) with MTC measured performance supports the validity of the revised theory. .

  17. Photoporation and cell transfection using a violet diode laser

    NASA Astrophysics Data System (ADS)

    Paterson, L.; Agate, B.; Comrie, M.; Ferguson, R.; Lake, T. K.; Morris, J. E.; Carruthers, A. E.; Brown, C. T. A.; Sibbett, W.; Bryant, P. E.; Gunn-Moore, F.; Riches, A. C.; Dholakia, Kishan

    2005-01-01

    The introduction and subsequent expression of foreign DNA inside living mammalian cells (transfection) is achieved by photoporation with a violet diode laser. We direct a compact 405 nm laser diode source into an inverted optical microscope configuration and expose cells to 0.3 mW for 40 ms. The localized optical power density of ~1200 MW/m2 is six orders of magnitude lower than that used in femtosecond photoporation (~104 TW/m2). The beam perforates the cell plasma membrane to allow uptake of plasmid DNA containing an antibiotic resistant gene as well as the green fluorescent protein (GFP) gene. Successfully transfected cells then expand into clonal groups which are used to create stable cell lines. The use of the violet diode laser offers a new and simple poration technique compatible with standard microscopes and is the simplest method of laser-assisted cell poration reported to date.

  18. Maximum time-dependent space-charge limited diode currents

    NASA Astrophysics Data System (ADS)

    Griswold, M. E.; Fisch, N. J.

    2016-01-01

    Recent papers claim that a one dimensional (1D) diode with a time-varying voltage drop can transmit current densities that exceed the Child-Langmuir (CL) limit on average, apparently contradicting a previous conjecture that there is a hard limit on the average current density across any 1D diode, as t → ∞, that is equal to the CL limit. However, these claims rest on a different definition of the CL limit, namely, a comparison between the time-averaged diode current and the adiabatic average of the expression for the stationary CL limit. If the current were considered as a function of the maximum applied voltage, rather than the average applied voltage, then the original conjecture would not have been refuted.

  19. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun; Shen, Bo; Liao, Zhi-Min E-mail: yudp@pku.edu.cn; Yu, Da-Peng E-mail: yudp@pku.edu.cn

    2014-08-18

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ∼mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  20. Power and stability limitations of resonant tunneling diodes

    NASA Technical Reports Server (NTRS)

    Kidner, C.; Mehdi, I.; East, J. R.; Haddad, G. I.

    1990-01-01

    Stability criteria for resonant tunneling diodes are investigated. Details of how extrinsic elements, such as series inductance and parallel capacitance, affect the stability are presented. A GaAs/AlAs/InGaAs/AlAs/GaAs double-barrier diode is investigated, showing the effect of different modes of low-frequency oscillation and the extrinsic circuit required for stabilization. The effect of device stabilization on high-frequency power generation is described. The main conclusions of the paper are: (1) stable resonant tunneling diode operation is difficult to obtain, and (2) the circuit and device conditions required for stable operation greatly reduce the amount of power that can be produced by these devices.

  1. Practical applications of the diode in dental practice

    NASA Astrophysics Data System (ADS)

    Moldoveanu, Lucia E.; Odor, Alin A.

    2016-03-01

    Introduction: The use of lasers has become a practice in modern periodontology and it is a fact that the use of diodes in the dental office can bring a real benefit in periodontal surgery. Material and method: These case reports describe few of various soft tissue procedures that were performed with diode laser 940 nm (Epic 10, Biolase Inc., USA). Discussions: There are a few immediate benefits of the intervention: the "periodontal bandage" belongs to the patient, the procedure is painless, performed under a superficial anesthesia and the psychological impact on the patient, as well as the acceptance, are superior to conventional methods of dentistry. Conclusions: Diode lasers at the level of periodontium have become a significant part of the dentistry, reducing the patient's stress and giving satisfaction to practitioners as well.

  2. Thermal Regime of High-power Laser Diodes

    NASA Astrophysics Data System (ADS)

    Bezotosnyi, V. V.; Krokhin, O. N.; Oleshchenko, V. A.; Pevtsov, V. F.; Popov, Yu. M.; Cheshev, E. A.

    We discuss the design and application perspectives of different crystal, ceramic and composite-type submounts with thermo-compensating properties as well as submounts from materials with high thermal conductivity for overcoming thermal problem in high-power laser diodes (LD) and improving thermal management of other high-power optoelectronic and electronic semiconductor devices. Thermal fields in high-power laser diodes were calculated in 3 D thermal model at CW operation for some heatsink designs taking into account the experimental dependence of laser total efficiency against pumping current in order to extend the range of reliable operation up to thermal loads 20-30 W and corresponding output optical power up to 15-20 W for 100 μm stripe laser diodes.

  3. Development and fabrication of improved Schottky power diodes

    NASA Technical Reports Server (NTRS)

    Cordes, L. F.; Garfinkel, M.; Taft, E. A.

    1975-01-01

    Reproducible methods for the fabrication of silicon Schottky diodes have been developed for tungsten, aluminum, conventional platinum silicide, and low temperature platinum silicide. Barrier heights and barrier lowering under reverse bias have been measured, permitting the accurate prediction of forward and reverse diode characteristics. Processing procedures have been developed that permit the fabrication of large area (about 1 sq cm) mesageometry power Schottky diodes with forward and reverse characteristics that approach theoretical values. A theoretical analysis of the operation of bridge rectifier circuits has been performed, which indicates the ranges of frequency and voltage for which Schottky rectifiers are preferred to p-n junctions. Power Schottky rectifiers have been fabricated and tested for voltage ratings up to 140 volts.

  4. Graphene/GaN diodes for ultraviolet and visible photodetectors

    NASA Astrophysics Data System (ADS)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun; Shen, Bo; Liao, Zhi-Min; Yu, Da-Peng

    2014-08-01

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ˜mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  5. Gate Modulation of Graphene-ZnO Nanowire Schottky Diode

    NASA Astrophysics Data System (ADS)

    Liu, Ren; You, Xu-Chen; Fu, Xue-Wen; Lin, Fang; Meng, Jie; Yu, Da-Peng; Liao, Zhi-Min

    2015-05-01

    Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier height is sensitive to Vg due to the variation of Fermi level of graphene. The barrier height increases quickly with sweeping Vg towards the negative value, while decreases slowly towards the positive Vg. Our results are helpful to understand the fundamental mechanism of the electric transport in graphene-semiconductor Schottky diode.

  6. Optoelectronics with electrically tunable PN diodes in monolayer WSe2

    NASA Astrophysics Data System (ADS)

    Churchill, Hugh; Baugher, Britton; Yang, Yafang; Jarillo-Herrero, Pablo

    2014-03-01

    We describe the transport and optoelectronic behavior of ambipolar monolayer WSe2 devices in which two local gates are used to define a PN junction exclusively within the sheet of WSe2. With these electrically tunable PN junctions, we demonstrate both PN and NP diodes with ideality factors better than 2. Under excitation with light, the diodes show photodetection responsivity of 210 mA/W and photovoltaic power generation with a peak external quantum efficiency of 0.2%, promising numbers for a nearly transparent monolayer sheet in a lateral device geometry. Finally, we demonstrate a light-emitting diode based on monolayer WSe2. These devices provide a fundamental building block for ultra-thin, flexible, and nearly transparent optoelectronic and electronic applications based on ambipolar dichalcogenide materials.

  7. Despeckling fly's eye homogenizer for single mode laser diodes.

    PubMed

    Mizuyama, Yosuke; Harrison, Nathan; Leto, Riccardo

    2013-04-01

    A novel fly's eye homogenizer for single mode laser diodes is presented. This technology overcomes the speckle problem that has been unavoidable for fly's eye homogenizers used with coherent light sources such as single mode laser diodes. Temporal and spatial coherence are reduced simultaneously by introducing short pulse driving of the injection current and a staircase element. Speckle has been dramatically reduced to 5% from 87% compared to a conventional system and a uniform laser line illumination was obtained by the proposed fly's eye homogenizer with a single mode UV-blue laser diode for the first time. A new spatial coherence function was mathematically formulated to model the proposed system and was applied to a partially coherent intensity formula that was newly developed in this study from Wolf's theory to account for the results. PMID:23571997

  8. Materials processing with a high power diode laser

    SciTech Connect

    Li, L.; Lawrence, J.; Spencer, J.T.

    1996-12-31

    This paper reports on work exploring the feasibility of a range of materials processing applications using a Diomed 60W diode laser delivered through a 600{mu}m diameter optical fibre to a 3 axis CNC workstation. The applications studied include: marking/engraving natural stones (marble and granite), marking ceramic tiles, sealing tile grouts, cutting and marking glass, marking/engraving wood, stripping paint and lacquer, and welding metallic wires. The study shows that even at the present limited power level of diode lasers, many materials processing applications can be accomplished with satisfactory results. Through the study an initial understanding of interaction of high power diode laser (HPDL) beam with various materials has been gained. Also, within the paper basic beam characteristics, and current R&D activities in HPDL technology and materials processing applications are reviewed.

  9. Measurement and Simulation of the Variation in Proton-Induced Energy Deposition in Large Silicon Diode Arrays

    NASA Technical Reports Server (NTRS)

    Howe, Christina L.; Weller, Robert A.; Reed, Robert A.; Sierawski, Brian D.; Marshall, Paul W.; Marshall, Cheryl J.; Mendenhall, Marcus H.; Schrimpf, Ronald D.

    2007-01-01

    The proton induced charge deposition in a well characterized silicon P-i-N focal plane array is analyzed with Monte Carlo based simulations. These simulations include all physical processes, together with pile up, to accurately describe the experimental data. Simulation results reveal important high energy events not easily detected through experiment due to low statistics. The effects of each physical mechanism on the device response is shown for a single proton energy as well as a full proton space flux.

  10. Monolithic watt-level millimeter-wave diode-grid frequency tripler array

    NASA Technical Reports Server (NTRS)

    Hwu, R. J.; Luhmann, N. C., Jr.; Rutledge, D. B.; Hancock, B.; Lieneweg, U.

    1988-01-01

    In order to provide watt-level CW output power throughout the millimeter and submillimeter wave region, thousands of solid-state diodes have been monolithically integrated using a metal grid to produce a highly efficient frequency multiplier. Devices considered include GaAs Schottky diodes, thin MOS diodes, and GaAs Barrier-Intrinsic-N(+)diodes. The performance of the present compact low-cost device has been theoretically and experimentally validated.

  11. Development of a thermal diode heat pipe for cryogenic applications

    NASA Technical Reports Server (NTRS)

    Quadrini, J. A.; Mccreight, C. R.

    1977-01-01

    The paper describes the development of a cryogenic thermal diode heat pipe for space flight applications. The diode has ethane working fluid, and uses the liquid blockage technique with an internal blocking orifice, to accomplish shutoff in the reverse mode. The pipe is 0.635 cm OD by 75.82 cm long including a 2.54 cc excess liquid reservoir. Experimental data are presented for forward mode throughput vs tilt, film coefficients, and reverse mode characteristics. Transport capacity is 1000 w-cm at 2.5 cm tilt. Evaporator and condenser film coefficients were 0.92 and 1.64 w/sq cm K, respectively.

  12. Monolithic millimeter-wave diode grid frequency multiplier arrays

    NASA Technical Reports Server (NTRS)

    Liu, Hong-Xia L.; Qin, X.-H.; Sjogren, L. B.; Wu, W.; Chung, E.; Domier, C. W.; Luhmann, N. C., Jr.

    1992-01-01

    Monolithic diode frequency multiplier arrays, including barrier-N-N(+) (BNN) doubler, multi-quantum-barrier-varactor (MQBV) tripler, Schottky-quantum-barrier-varactor (SQBV) tripler, and resonant-tunneling-diode (RTD) tripler arrays, have been successfully fabricated with yields between 85 and 99 percent. Frequency doubling and/or tripling have been observed for all the arrays. Output powers of 2.4-2.6 W (eta = 10-18 percent) at 66 GHz with the BNN doubler and 3.8-10 W (eta = 1.7-4 percent) at 99 GHz with the SQBV tripler have been achieved.

  13. An external cavity diode laser using a volume holographic grating

    NASA Astrophysics Data System (ADS)

    Chuang, Ho-Chiao; Chang, Chang-Ray; Chen, Chun-Chia; Chang, Ming-Shien

    2012-10-01

    This study presents an external cavity diode laser (ECDL) system, utilizing a volume holographic grating (VHG) and a microfabricated silicon flexure as the VHG holder. The laser design is aimed for easy assembly, controllability, and better stability of the laser cavity. The laser frequency was stabilized to a D2 transition of rubidium at 780.247 nm, with a mode-hop-free tuning range of 16 GHz and 9.6 GHz with and without feed-forward on the diode injection current. The measured linewidth was 850 kHz in 500 s, qualified for laser cooling experiments.

  14. Application of NIR laser diodes to pulse oximetry

    NASA Astrophysics Data System (ADS)

    Lopez Silva, Sonnia M.; Giannetti, Romano; Dotor, Maria L.; Sendra, Jose R.; Silveira, Juan P.; Briones, Fernando

    1999-01-01

    A transmittance pulse oximeter based on near-infrared laser diodes for monitoring arterial blood hemoglobin oxygen saturation has been developed and tested. The measurement system consists of the optical sensor, sensor electronics, acquisition board and personal computer. The system has been tested in a two-part experimental study involving human volunteers. A calibration curve was derived and healthy volunteers were monitored under normal and apnea conditions, both with the proposed system and with a commercial pulse oximeter. The obtained results demonstrate the feasibility of using a sensor with laser diodes emitting at specific near-infrared wavelengths for pulse oximetry.

  15. System and method for high power diode based additive manufacturing

    DOEpatents

    El-Dasher, Bassem S.; Bayramian, Andrew; Demuth, James A.; Farmer, Joseph C.; Torres, Sharon G.

    2016-04-12

    A system is disclosed for performing an Additive Manufacturing (AM) fabrication process on a powdered material forming a substrate. The system may make use of a diode array for generating an optical signal sufficient to melt a powdered material of the substrate. A mask may be used for preventing a first predetermined portion of the optical signal from reaching the substrate, while allowing a second predetermined portion to reach the substrate. At least one processor may be used for controlling an output of the diode array.

  16. Gummy Smile Correction with Diode Laser: Two Case Reports

    PubMed Central

    Narayanan, Mahesh; Laju, S; Erali, Susil M; Erali, Sunil M; Fathima, Al Zainab; Gopinath, P V

    2015-01-01

    Beautification of smiles is becoming an everyday requirement in dental practice. Apart from teeth, gingiva also plays an important role in smile esthetics. Excessive visualization of gingiva is a common complaint among patients seeking esthetic treatment. A wide variety of procedures are available for correction of excessive gum display based on the cause of the condition. Soft tissue diode laser contouring of gingiva is a common procedure that can be undertaken in a routine dental setting with excellent patient satisfaction and minimal post-operative sequale. Two cases of esthetic crown lengthening with diode laser 810 nm are presented here. PMID:26668491

  17. Electrolytic photodissociation of chemical compounds by iron oxide photochemical diodes

    DOEpatents

    Somorjai, Gabor A.; Leygraf, Christofer H.

    1985-01-01

    Chemical compounds can be dissociated by contacting the same with a p/n type semi-conductor photochemical diode having visible light as its sole source of energy. The photochemical diode consists of low cost, readily available materials, specifically polycrystalline iron oxide doped with silicon in the case of the n-type semi-conductor electrode, and polycrystalline iron oxide doped with magnesium in the case of the p-type electrode. So long as the light source has an energy greater than 2.2 electron volts, no added energy source is needed to achieve dissociation.

  18. A portable lidar using a diode-pumped YAG laser

    NASA Technical Reports Server (NTRS)

    Takeuchi, N.; Okumura, H.; Sugita, T.; Matsumoto, H.; Yamaguchi, S.

    1992-01-01

    A Mie lidar system is technically established and is used for monitoring air pollution, stratospheric and boundary layer aerosol distribution, plume dispersion, visibility, and the study of atmospheric structure and cloud physics. However, a lidar system is not widely used because of its cumbersome handling and unwieldy portability. Although the author developed a laser diode lidar system based on RM-CW technique, it has a limit of measurement distance. Here we report the development of an all solid Mie lidar system using a diode-pumped Nd:YAG laser and a Si-APD detector. This was constructed as a prototype of a handy lidar system.

  19. Diode laser-pumped solid-state lasers

    NASA Technical Reports Server (NTRS)

    Fan, Tso Yee; Byer, Robert L.

    1988-01-01

    Recently, interest in diode laser-pumped solid-state lasers has increased due to their advantages over flashlamp-pumped solid-state lasers. A historical overview is presented of semiconductor diode-pumped solid-state lasers beginning with work in the early 1960s and continuing through recent work on wavelength extension of these devices by laser operation on new transitions. Modeling of these devices by rate equations to obtain expressions for threshold, slope efficiency, and figures of merit is also given.

  20. Novel diode laser-based sensors for gas sensing applications

    NASA Technical Reports Server (NTRS)

    Tittel, F. K.; Lancaster, D. G.; Richter, D.

    2000-01-01

    The development of compact spectroscopic gas sensors and their applications to environmental sensing will be described. These sensors employ mid-infrared difference-frequency generation (DFG) in periodically poled lithium niobate (PPLN) crystals pumped by two single-frequency solid state lasers such as diode lasers, diode-pumped solid state, and fiber lasers. Ultrasensitive, highly selective, and real-time measurements of several important atmospheric trace gases, including carbon monoxide, nitrous oxide, carbon dioxide, formaldehyde [correction of formaldehye], and methane, have been demonstrated.