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Sample records for a-igzo tft device

  1. Role of deposition and annealing of the top gate dielectric in a-IGZO TFT-based dual-gate ion-sensitive field-effect transistors

    NASA Astrophysics Data System (ADS)

    Kumar, Narendra; Sutradhar, Moitri; Kumar, Jitendra; Panda, Siddhartha

    2017-03-01

    The deposition of the top gate dielectric in thin film transistor (TFT)-based dual-gate ion-sensitive field-effect transistors (DG ISFETs) is critical, and expected not to affect the bottom gate TFT characteristics, while providing a higher pH sensitive surface and efficient capacitive coupling between the gates. Amorphous Ta2O5, in addition to having good sensing properties, possesses a high dielectric constant of ∼25 making it well suited as the top gate dielectric in a DG ISFET by providing higher capacitive coupling (ratio of C top/C bottom) leading to higher amplification. To avoid damage of the a-IGZO channel reported to be caused by plasma exposure, deposition of Ta2O5 by e-beam evaporation followed by annealing was investigated in this work to obtain sensitivity over the Nernst limit. The deteriorated bottom gate TFT characteristics, indicated by an increase in the channel conductance, confirmed that plasma exposure is not the sole contributor to the changes. Oxygen vacancies at the Ta2O5/a-IGZO interface, which emerged during processing, increased the channel conductivity, became filled by optimum annealing in oxygen at 400 °C for 1 h, which was confirmed by an x-ray photoelectron spectroscopy depth profiling analysis. The obtained pH sensitivity of the TFT-based DG ISFET was 402 mV pH‑1, which is about 6.8 times the Nernst limit (59 mV pH‑1). The concept of capacitive coupling was also demonstrated by simulating an a-IGZO-based DG TFT structure. Here, the exposure of the top gate dielectric to the electrolyte without applying any top gate bias led to changes in the measured threshold voltage of the bottom gate TFT, and this obviated the requirement of a reference electrode needed in conventional ISFETs and other reported DG ISFETs. These devices, with high sensitivities and requiring low volumes (∼2 μl) of analyte solution, could be potential candidates for utilization as chemical sensors and biosensors.

  2. Enhanced performance of a-IGZO thin-film transistors by forming AZO/IGZO heterojunction source/drain contacts

    NASA Astrophysics Data System (ADS)

    Zou, Xiao; Fang, Guojia; Wan, Jiawei; Liu, Nishuang; Long, Hao; Wang, Haolin; Zhao, Xingzhong

    2011-05-01

    A low-cost Al-doped ZnO (AZO) thin film was deposited by radio-frequency magnetron sputtering with different Ar/O2 flow ratios. The optical and electrical properties of an AZO film were investigated. A highly conductive AZO film was inserted between the amorphous InGaZnO (a-IGZO) channel and the metal Al electrode to form a heterojunction source/drain contact, and bottom-gate amorphous a-IGZO thin-film transistors (TFTs) with a high κ HfON gate dielectric were fabricated. The AZO film reduced the source/drain contact resistivity down to 79 Ω cm. Enhanced device performance of a-IGZO TFT with Al/AZO bi-layer S/D electrodes (W/L = 500/40 µm) was achieved with a saturation mobility of 13.7 cm2 V-1 s-1, a threshold voltage of 0.6 V, an on-off current ratio of 4.7 × 106, and a subthreshold gate voltage swing of 0.25 V dec-1. It demonstrated the potential application of the AZO film as a promising S/D contact material for the fabrication of the high performance TFTs.

  3. Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO) as a pH sensitive layer for applications in field effect based sensors

    NASA Astrophysics Data System (ADS)

    Kumar, Narendra; Kumar, Jitendra; Panda, Siddhartha

    2015-06-01

    The use of a-IGZO instead of the conventional high-k dielectrics as a pH sensitive layer could lead to the simplification of fabrication steps of field effect based devices. In this work, the pH sensitivities of a-IGZO films directly deposited over a SiO2/Si surface were studied utilizing electrolyte-insulator-semiconductor (EIS) structures. Annealing of the films was found to affect the sensitivity of the devices and the device with the film annealed at 400 oC in N2 ambience showed the better sensitivity, which reduced with further increase in the annealing temperature to 500 oC. The increased pH sensitivity with the film annealed at 400 oC in N2 gas was attributed to the enhanced lattice oxygen ions (based on the XPS data) and improved C-V characteristics, while the decrease in sensitivity at an increased annealing temperature of 500 oC was attributed to defects in the films as well as the induced traps at the IGZO/SiO2 interface based on the stretched accumulation and the peak in the inversion region of C-V curves. This study could help to develop a sensor where the material (a-IGZO here) used as the active layer in a thin film transistors (TFTs) possibly could also be used as the pH sensitive layer without affecting the TFT characteristics, and thus obviating the need of high-K dielectrics for sensitivity enhancement.

  4. Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO) as a pH sensitive layer for applications in field effect based sensors

    SciTech Connect

    Kumar, Narendra; Kumar, Jitendra; Panda, Siddhartha

    2015-06-15

    The use of a-IGZO instead of the conventional high-k dielectrics as a pH sensitive layer could lead to the simplification of fabrication steps of field effect based devices. In this work, the pH sensitivities of a-IGZO films directly deposited over a SiO{sub 2}/Si surface were studied utilizing electrolyte-insulator-semiconductor (EIS) structures. Annealing of the films was found to affect the sensitivity of the devices and the device with the film annealed at 400 {sup o}C in N{sub 2} ambience showed the better sensitivity, which reduced with further increase in the annealing temperature to 500 {sup o}C. The increased pH sensitivity with the film annealed at 400 {sup o}C in N{sub 2} gas was attributed to the enhanced lattice oxygen ions (based on the XPS data) and improved C-V characteristics, while the decrease in sensitivity at an increased annealing temperature of 500 {sup o}C was attributed to defects in the films as well as the induced traps at the IGZO/SiO{sub 2} interface based on the stretched accumulation and the peak in the inversion region of C-V curves. This study could help to develop a sensor where the material (a-IGZO here) used as the active layer in a thin film transistors (TFTs) possibly could also be used as the pH sensitive layer without affecting the TFT characteristics, and thus obviating the need of high-K dielectrics for sensitivity enhancement.

  5. Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors

    PubMed Central

    2013-01-01

    In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs, a small subthreshold swing of 143 mV/decade, and a high Ion/Ioff current ratio of 4.23 × 107, presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er2TiO5 film. Furthermore, the reliability of voltage stress can be improved using an Er2TiO5 gate dielectric. PMID:23294730

  6. Effect of O2 plasma treatment on density-of-states in a-IGZO thin film transistors

    NASA Astrophysics Data System (ADS)

    Ding, Xingwei; Huang, Fei; Li, Sheng; Zhang, Jianhua; Jiang, Xueyin; Zhang, Zhilin

    2017-01-01

    This work reports an efficient route for enhancing the performance of amorphous InGaZnO (a-IGZO) thin film transistors (TFT). The mobility was greatly improved by about 38% by means of O2 plasma treatment. Temperature-stress was carried out to investigate the stability and extract the parameters related to activation energy ( E a) and density-of-states (DOS). The DOS was calculated on the basis of the experimentally obtained E a, which can explain the experimental observation. A lower activation energy ( E a, 0.72 eV) and a smaller DOS were obtained in the O2 plasma treatment TFT based on the temperature-dependent transfer curves. The results showed that temperature stability and electrical properties enhancements in a-IGZO thin film transistors were attributed to the smaller DOS. [Figure not available: see fulltext.

  7. Ionic liquid versus SiO2 gated a-IGZO thin film transistors: A direct comparison

    DOE PAGES

    Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; ...

    2015-08-12

    Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~105, a promising field effect mobility of 14.20 cm2V–1s–1, and a threshold voltage ofmore » 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm2V–1s–1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.« less

  8. Ionic liquid versus SiO2 gated a-IGZO thin film transistors: A direct comparison

    SciTech Connect

    Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; Haglund, Amanda V.; Dai, Sheng; Ward, Thomas Zac; Mandrus, David; Rack, Philip D.

    2015-08-12

    Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~105, a promising field effect mobility of 14.20 cm2V–1s–1, and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm2V–1s–1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.

  9. High-performance SEGISFET pH Sensor using the structure of double-gate a-IGZO TFTs with engineered gate oxides

    NASA Astrophysics Data System (ADS)

    Pyo, Ju-Young; Cho, Won-Ju

    2017-03-01

    In this paper, we propose a high-performance separative extended gate ion-sensitive field-effect transistor (SEGISFET) that consists of a tin dioxide (SnO2) SEG sensing part and a double-gate structure amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with tantalum pentoxide/silicon dioxide (Ta2O5/SiO2)-engineered top-gate oxide. To increase sensitivity, we maximized the capacitive coupling ratio by applying high-k dielectric at the top-gate oxide layer. As an engineered top-gate oxide, a stack of 25 nm-thick Ta2O5 and 10 nm-thick SiO2 layers was found to simultaneously satisfy a small equivalent oxide thickness (∼17.14 nm), a low leakage current, and a stable interfacial property. The threshold-voltage instability, which is a fundamental issue in a-IGZO TFTs, was improved by low-temperature post-deposition annealing (∼87 °C) using microwave irradiation. The double-gate structure a-IGZO TFTs with engineered top-gate oxide exhibited high mobility, small subthreshold swing, high drive current, and larger on/off current ratio. The a-IGZO SEGISFETs with a dual-gate sensing mode showed a pH sensitivity of 649.04 mV pH‑1, which is far beyond the Nernst limit. The non-ideal behavior of ISFETs, hysteresis, and drift effect also improved. These results show that the double-gate structure a-IGZO TFTs with engineered top-gate oxide can be a good candidate for cheap and disposable SEGISFET sensors.

  10. Improvement of the positive bias stability of a-IGZO TFTs by the HCN treatment

    NASA Astrophysics Data System (ADS)

    Kim, Myeong-Ho; Choi, Myung-Jea; Kimura, Katsuya; Kobayashi, Hikaru; Choi, Duck-Kyun

    2016-12-01

    In recent years, many researchers have attempted to improve the bias stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). In this study, the hydrogen cyanide (HCN) treatment was carried out to improve the positive bias stability of bottom-gate a-IGZO TFTs. The HCN treatment was performed using a 0.1 M HCN solution with a pH of 10 at room temperature. Before applying the positive bias stress, there were no differences in the major electrical properties, including the saturation mobility (μsat), threshold voltage (Vth), and subthreshold swing (S/S), between HCN-treated and non-HCN-treated devices. However, after applying the positive bias stress, the HCN-treated device showed superior bias stability compared to the non-HCN-treated device. This difference is associated with the passivation of the defect states and the surface of the back-channel layer of the HCN-treated device by cyanide ions.

  11. Fabrication of an a-IGZO thin film transistor using selective deposition of cobalt by the self-assembly monolayer (SAM) process.

    PubMed

    Cho, Young-Je; Kim, HyunHo; Park, Kyoung-Yun; Lee, Jaegab; Bobade, Santosh M; Wu, Fu-Chung; Choi, Duck-Kyun

    2011-01-01

    Interest in transparent oxide thin film transistors utilizing ZnO material has been on the rise for many years. Recently, however, IGZO has begun to draw more attention due to its higher stability and superior electric field mobility when compared to ZnO. In this work, we address an improved method for patterning an a-IGZO film using the SAM process, which employs a cost-efficient micro-contact printing method instead of the conventional lithography process. After a-IGZO film deposition on the surface of a SiO2-layered Si wafer, the wafer was illuminated with UV light; sources and drains were then patterned using n-octadecyltrichlorosilane (OTS) molecules by a printing method. Due to the low surface energy of OTS, cobalt was selectively deposited on the OTS-free a-IGZO surface. The selective deposition of cobalt electrodes was successful, as confirmed by an optical microscope. The a-IZGO TFT fabricated using the SAM process exhibited good transistor performance: electric field mobility (micro(FE)), threshold voltage (V(th)), subthreshold slope (SS) and on/off ratio were 2.1 cm2/Vs, 2.4 V, 0.35 V/dec and 2.9 x 10(6), respectively.

  12. Influence of External Forces on the Mechanical Characteristics of the a-IGZO and Graphene Based Flexible Display

    NASA Astrophysics Data System (ADS)

    Kim, H.-J.; Kim, Youn-Jea

    2014-08-01

    Thin film transistors (TFTs) based flexible displays have optically transparent and m echanically flexible properties that are attractive for next-generation display technologies. In particular, "amorphous indium-gallium-zinc-oxide" (a- IGZO) and graphene have attracted much attention due to the advantages of their excellent unif ormity and compatibility with transparent and flexible substrates. To maintain these characteristics, it is important to confirm the deformation characteristics of TFTs with applied external for ces, such as compressive or tensile stress, distortion effects, and temperature. The mechanical c haracteristics of modeled devices applied to different active layers on TFTs, such as a- IGZO and graphene, were investigated under various external conditions. The distributions of t he stress-strain curve on each active layer and the deformed shapes were assessed graphically.

  13. High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

    NASA Astrophysics Data System (ADS)

    Lee, Hyoung-Rae; Park, Jea-Gun

    2014-10-01

    We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage ( V th ) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO X distributed on the a-IGZO surface reduced the adsorption and the desorption of H2O and O2. This process is applicable to the TFT manufacturing process with a variable sputtering target.

  14. Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors

    NASA Astrophysics Data System (ADS)

    Tsao, S. W.; Chang, T. C.; Huang, S. Y.; Chen, M. C.; Chen, S. C.; Tsai, C. T.; Kuo, Y. J.; Chen, Y. C.; Wu, W. C.

    2010-12-01

    This study investigates the effect of hydrogen incorporation on amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs). The threshold voltage ( Vth) and subthreshold swing ( SS) of hydrogen-incorporated a-IGZO TFTs were improved, and the threshold voltage shift (Δ Vth) in hysteresis loop was also suppressed from 4 V to 2 V. The physical property and chemical composition of a-IGZO films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy, respectively. Experimental results show that the hydrogen-induced passivation of the interface trap states between active layer and dielectric is responsible for the improvement of SS and Vth.

  15. Oligonucleotide-arrayed TFT photosensor applicable for DNA chip technology.

    PubMed

    Tanaka, Tsuyoshi; Hatakeyama, Keiichi; Sawaguchi, Masahiro; Iwadate, Akihito; Mizutani, Yasushi; Sasaki, Kazuhiro; Tateishi, Naofumi; Takeyama, Haruko; Matsunaga, Tadashi

    2006-09-05

    A thin film transistor (TFT) photosensor fabricated by semiconductor integrated circuit (IC) technology was applied to DNA chip technology. The surface of the TFT photosensor was coated with TiO2 using a vapor deposition technique for the fabrication of optical filters. The immobilization of thiolated oligonucleotide probes onto a TiO2-coated TFT photosensor using gamma-aminopropyltriethoxysilane (APTES) and N-(gamma-maleimidobutyloxy) sulfosuccinimide ester (GMBS) was optimized. The coverage value of immobilized oligonucleotides reached a plateau at 33.7 pmol/cm2, which was similar to a previous analysis using radioisotope-labeled oligonucleotides. The lowest detection limits were 0.05 pmol/cm2 for quantum dot and 2.1 pmol/cm2 for Alexa Fluor 350. Furthermore, single nucleotide polymorphism (SNP) detection was examined using the oligonucleotide-arrayed TFT photosensor. A SNP present in the aldehyde dehydrogenase 2 (ALDH2) gene was used as a target. The SNPs in ALDH2*1 and ALDH2*2 target DNA were detected successfully using the TFT photosensor. DNA hybridization in the presence of both ALDH2*1 and ALDH2*2 target DNA was observed using both ALDH2*1 and ALDH2*2 detection oligonucleotides-arrayed TFT photosensor. Use of the TFT photosensor will allow the development of a disposable photodetecting device for DNA chip systems.

  16. Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

    NASA Astrophysics Data System (ADS)

    Tang, Lan-Feng; Yu, Guang; Lu, Hai; Wu, Chen-Fei; Qian, Hui-Min; Zhou, Dong; Zhang, Rong; Zheng, You-Dou; Huang, Xiao-Ming

    2015-08-01

    The influence of white light illumination on the stability of an amorphous InGaZnO thin film transistor is investigated in this work. Under prolonged positive gate bias stress, the device illuminated by white light exhibits smaller positive threshold voltage shift than the device stressed under dark. There are simultaneous degradations of field-effect mobility for both stressed devices, which follows a similar trend to that of the threshold voltage shift. The reduced threshold voltage shift under illumination is explained by a competition between bias-induced interface carrier trapping effect and photon-induced carrier detrapping effect. It is further found that white light illumination could even excite and release trapped carriers originally exiting at the device interface before positive gate bias stress, so that the threshold voltage could recover to an even lower value than that in an equilibrium state. The effect of photo-excitation of oxygen vacancies within the a-IGZO film is also discussed. Project supported by the State Key Program for Basic Research of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China.

  17. Polysilicon TFT fabrication on plastic substrates

    SciTech Connect

    Carey, P.G.; Smith, P.M.; Wickboldt, P.W.; Thompson, M.O.; Sigmon, T.W.

    1997-08-06

    Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).

  18. High-performance hybrid complementary logic inverter through monolithic integration of a MEMS switch and an oxide TFT.

    PubMed

    Song, Yong-Ha; Ahn, Sang-Joon Kenny; Kim, Min-Wu; Lee, Jeong-Oen; Hwang, Chi-Sun; Pi, Jae-Eun; Ko, Seung-Deok; Choi, Kwang-Wook; Park, Sang-Hee Ko; Yoon, Jun-Bo

    2015-03-25

    A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain.

  19. Electrical properties of solution processed highly transparent ZnO TFT with organic gate dielectric

    NASA Astrophysics Data System (ADS)

    Pandya, Nirav C.; Joshi, Nikhil G.; Trivedi, U. N.; Joshi, U. S.

    2013-02-01

    All oxide thin film transistors (TFT) with zinc oxide active layer were fabricated by chemical solution deposition (CSD) using aqueous solutions on glass substrate. Thin film transistors (TFTs) with amorphous zinc oxide as channel layers and poly-vinyl alcohol as dielectric layers were fabricated at low temperatures by chemical solution deposition (CSD). Atomic force microscopy (AFM) confirmed nano grain size with fairly smooth surface topography. Very small leakage currents were achieved in the transfer curves, while soft saturation was observed in the output current voltage (I-V) characteristics of the device. Optical transmission of better than 87% in the visible region was estimated, which is better than the organic gate insulator based ZnO TFTs reported so far. Our results offer lot of promise to TFT based display and optoelectronics.

  20. Fabrication of amorphous InGaZnO thin-film transistor-driven flexible thermal and pressure sensors

    NASA Astrophysics Data System (ADS)

    Park, Ick-Joon; Jeong, Chan-Yong; Cho, In-Tak; Lee, Jong-Ho; Cho, Eou-Sik; Kwon, Sang Jik; Kim, Bosul; Cheong, Woo-Seok; Song, Sang-Hun; Kwon, Hyuck-In

    2012-10-01

    In this work, we present the results concerning the use of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) as a driving transistor of the flexible thermal and pressure sensors which are applicable to artificial skin systems. Although the a-IGZO TFT has been attracting much attention as a driving transistor of the next-generation flat panel displays, no study has been performed about the application of this new device to the driving transistor of the flexible sensors yet. The proposed thermal sensor pixel is composed of the series-connected a-IGZO TFT and ZnO-based thermistor fabricated on a polished metal foil, and the ZnO-based thermistor is replaced by the pressure sensitive rubber in the pressure sensor pixel. In both sensor pixels, the a-IGZO TFT acts as the driving transistor and the temperature/pressure-dependent resistance of the ZnO-based thermistor/pressure-sensitive rubber mainly determines the magnitude of the output currents. The fabricated a-IGZO TFT-driven flexible thermal sensor shows around a seven times increase in the output current as the temperature increases from 20 °C to 100 °C, and the a-IGZO TFT-driven flexible pressure sensors also exhibit high sensitivity under various pressure environments.

  1. Recent developments in materials for TFT/PDLC devices

    NASA Astrophysics Data System (ADS)

    Coates, David; Greenfield, S.; Goulding, Mark; Brown, E.; Nolan, Patrick

    1993-08-01

    Liquid crystal mixtures for use over an active matrix substrate must have a high resistivity and, to maintain high value during the lifetime of the display, the materials must be very stable. Many such liquid crystal mixtures are known and used in twisted nematic displays but they are of low birefringence; very few high birefringence liquid crystals of this type are known. Several classes of liquid crystal which fulfill these criteria have been developed and formulated into low melting point mixtures suitable for use with UV curing prepolymers. The properties of PDLC films containing these new mixtures show that the high birefringence values now possible can lead to substantially increased contrast ratios.

  2. Technology and characterization of Thin-Film Transistors (TFTs) with a-IGZO semiconductor and high-k dielectric layer

    NASA Astrophysics Data System (ADS)

    Mroczyński, R.; Wachnicki, Ł.; Gierałtowska, S.

    2016-12-01

    In this work, we present the design of the technology and fabrication of TFTs with amorphous IGZO semiconductor and high-k gate dielectric layer in the form of hafnium oxide (HfOx). In the course of this work, the IGZO fabrication was optimized by means of Taguchi orthogonal tables approach in order to obtain an active semiconductor with reasonable high concentration of charge carriers, low roughness and relatively high mobility. The obtained Thin-Film Transistors can be characterized by very good electrical parameters, i.e., the effective mobility (μeff ≍ 12.8 cm2V-1s-1) significantly higher than that for a-Si TFTs (μeff ≍ 1 cm2V-1s-1). However, the value of sub-threshold swing (i.e., 640 mV/dec) points that the interfacial properties of IGZO/HfOx stack is characterized by high value of interface states density (Dit) which, in turn, demands further optimization for future applications of the demonstrated TFT structures.

  3. MBR/RO/ozone processes for TFT-LCD industrial wastewater treatment and recycling.

    PubMed

    Chen, T K; Ni, C H; Chan, Y C; Lu, M C

    2005-01-01

    This research is mainly to explore the treatment capacity for TFT-LCD industrial wastewater recycling by the processes combined with membrane bioreactor (MBR), reverse osmosis (RO) and ozone(O3). The organic wastewater from the TFT-LCD industry was selected as the target. MBR, RO and ozone plants were established for evaluation. An MBR plant consisted of a 2-stage anoxic/aerobic bioreactor and an immersed UF membrane unit was employed. The effluent of MBR was conducted into the RO system then into the ozone system. The RO system consisted of a spiral membrane in the vessel. One bubble column, 75 cm high and diameter 5 cm, were used as the ozonation reactor. On the bottom of ozonation reactor is a porous diffuser for releasing gas, with an aperture of 100 microm (0.1 cm). Over the whole experimental period, the MBR process achieved a satisfactory organic removal. The COD could be removed with an average of over 98.5%. For the TOC item, the average removal efficiency was 97.4%. The stable effluent quality and satisfactory removal performance were ensured by the efficient interception performance of an immersed UF membrane device incorporated with the biological reactor. Moreover, the MBR effluent did not contain any suspended solids and the SDI value was under 3. After the treatment of RO, excellent water quality was found. The water quality of permeate was under 5 mg/I, 2 mg/l and 50 micros/cm for COD, TOC and conductivity respectively. The treated water can be recycled and reused for the cooling tower make-up water or other purposes. After the treatment of ozone, the treated water quality was under 5 mg/l and 0.852 mg/l for COD and TOC respectively. The test results of MBR, MBR/RO and MBR/RO/ozone processes were compared as possible appropriate treatment technologies applied in TFT-LCD industrial wastewater reuse and recycling.

  4. The suppressed negative bias illumination-induced instability in In-Ga-Zn-O thin film transistors with fringe field structure

    NASA Astrophysics Data System (ADS)

    Chen, Yu-Chun; Chang, Ting-Chang; Li, Hung-Wei; Hsieh, Tien-Yu; Chen, Te-Chih; Wu, Chang-Pei; Chou, Cheng-Hsu; Chung, Wang-Cheng; Chang, Jung-Fang; Tai, Ya-Hsiang

    2012-11-01

    This study investigates the suppressed negative gate bias illumination stress (NBIS) -induced instability of via-type amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) with fringe field (FF) structures. The less negative threshold voltage shifts of devices after NBIS are showed when device has larger FF structures. This finding is attributed to more dispersive distribution of photo-generated holes in the width direction of a-IGZO during NBIS, which reduce the hole trapping phenomenon in the front channel interface. The a-IGZO TFT with FF structure is expected to be an effective method to increase the electrical reliability of devices after NBIS.

  5. Transfer of stimulus control from a TFT to CRT screen.

    PubMed

    Railton, Renee Caron Richards; Foster, T Mary; Temple, William

    2010-10-01

    The use of television and computer screens for presenting stimuli to animals is increasing as it is non-invasive and can provide precise control over stimuli. Past studies have used cathode ray tube (CRT) screens; however, there is some evidence that these give different results to non-flickering thin film transistor (TFT) screens. Hens' critical flicker fusion frequency ranges between 80 and 90 Hz--above standard CRT screens. Thus, stimuli presented on CRT screens may appear distorted to hens. This study aimed to investigate whether changing the flicker rate of CRT screens altered hens' discrimination. Hens were trained (in a conditional discrimination) to discriminate between two stimuli on a TFT (flickerless) screen, and tested with the stimuli on a CRT screen at four flicker rates (60, 75, 85, and 100 Hz). The hens' accuracy generally decreased as the refresh rate of the CRT screen decreased. These results imply that the change in flicker rate changed the appearance of the stimuli enough to affect the hens' discrimination and stimulus control is disrupted when the stimuli appear to flicker.

  6. Ambient effect on thermal stability of amorphous InGaZnO thin film transistors

    NASA Astrophysics Data System (ADS)

    Xu, Jianeng; Wu, Qi; Xu, Ling; Xie, Haiting; Liu, Guochao; Zhang, Lei; Dong, Chengyuan

    2016-12-01

    The thermal stability of amorphous InGaZnO thin film transistors (a-IGZO TFTs) with various ambient gases was investigated. The a-IGZO TFTs in air were more thermally stable than the devices in the ambient argon. Oxygen, rather than nitrogen and moisture, was responsible for this improvement. Furthermore, the thermal stability of the a-IGZO TFTs improved with the increasing oxygen content in the surrounding atmosphere. The related physical mechanism was examined, indicating that the higher ambient oxygen content induced more combinations of the oxygen vacancies and adsorbed oxygen ions in the a-IGZO, which resulted in the larger defect formation energy. This larger defect formation energy led to the smaller variation in the threshold voltage for the corresponding TFT devices.

  7. Photometric and colorimetric measurements of CRT and TFT monitors for vision research

    NASA Astrophysics Data System (ADS)

    Klein, Johann; Zlatkova, Margarita; Lauritzen, Jan; Pierscionek, Barbara

    2013-08-01

    Visual displays have various limitations that can affect the results of vision research experiments. This study compares several characteristics of CRT (Hewlett Packard 7650) and TFT (LG Flatron L227 WT and Samsung 2233 RZ) monitors, including luminance and colour spatial homogeneity, luminance changes with viewing angle, contrast linearity and warm-up characteristics. In addition, the psychophysical performance in grating contrast sensitivity test for both CRT and TFT monitors was compared. The TFT monitors demonstrated spatial non-homogeneity ('mura') with up to 50% of luminance change across the screen and a more significant luminance viewing angle dependence compared with CRT. The chromaticity of the white point showed negligible variation across the screen. Both types of monitors required a warm-up time of the order of 60 min. Despite the physical differences between monitors, visual contrast sensitivity performance measured with the two types of monitors was similar using both static and flickering gratings.

  8. Molecular design, crystal packing and TFT performance of novel polythiophenes

    NASA Astrophysics Data System (ADS)

    Pan, Hualong

    This thesis presents the design, synthesis and thin-film-transistor performance of a novel series of polythiophenes. The work can be divided into two parts: (1) study of crystal packing of the alkyl side chains in single crystals of model oligothiophene compounds for soluble polythiophenes; (2) exploration of a new series of polythiophenes to achieve favorable crystal packing and hense high mobility for use in organic thin-film-transistors. The first part is based on the crystal packing of a series of compounds derived from the monomer of a high-performance semiconductor, poly(3,3"didodecylquarter-thiophene), PQT-12. A unique conformational polymorphism arising from side chains was observed when the conjugation of backbone of PQT-monomer was extended with phenyl, methyl-phenyl, trifluoromethyl-phenyl. The alkyl side chains preferred tilting towards the middle and then being parallel with the backbones when crystallized from a poor solvent, whereas, the side chains extended out vertically to the backbones when crystallized from a good solvent. The conformational polymorphism of the side chains in the dip-coated film was also studied. The following chapters focus on the design, characterization and TFT performance test of novel polymer semiconductors. A novel and symmetrical poly(4,8-didodecylbenzo[1,2-b:4,5-b']dithiophene) with alkyl side chains tethered to the middle of the large fused backbone was synthesized from 2,6-dibromo-4,8-didodecylbenzo[1,2-b:4,5-b']dithiophene by a dehalogenative coupling polymerization. The thin-film transistors made from this polymer as a semiconductor produced a field-effect mobility of 0.012 cm2V-1s-1 and current on/off ratio ˜2.5x105 after thermal annealing at 140°C. The performance was greatly enhanced (field-effect mobility ˜0.15 cm 2V-1s-1 and current on/off ratio x10 6) when two 3-methyl-thienylenes were incorporated into the backbone, poly(4,8-dodecyl-2,6-bis-(3-methylthiophen-2-yl)-benzo[1,2-b:4,5-b']dithiophene). Such good

  9. Prototype of IGZO-TFT preamplifier and analog counter for pixel detector

    NASA Astrophysics Data System (ADS)

    Shimazoe, K.; Koyama, A.; Takahashi, H.; Shindoh, T.; Miyoshi, H.

    2017-02-01

    IGZO-TFT (Indium Galium Zinc Oxide-Thin Film Transistor) is a promising technology for controlling large display areas and large area sensors because of its very low leakage current in the off state and relatively low cost. IGZO has been used as a switching gate for a large area flat-panel detector. The photon counting capability for X-ray medical imaging has been investigated and expected for low-dose exposure and material determination. Here the design and fabrication of a charge sensitive preamplifier and analog counter using IGZO-TFT processes and its performance are reported for the first time to be used for radiation photon counting applications.

  10. Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

    SciTech Connect

    Cho, Byungsu; Choi, Yonghyuk; Shin, Seokyoon; Jeon, Heeyoung; Seo, Hyungtak; Jeon, Hyeongtag

    2014-01-27

    We demonstrate an enhanced electrical stability through a Ti oxide (TiO{sub x}) layer on the amorphous InGaZnO (a-IGZO) back-channel; this layer acts as a surface polarity modifier. Ultrathin Ti deposited on the a-IGZO existed as a TiO{sub x} thin film, resulting in oxygen cross-binding with a-IGZO surface. The electrical properties of a-IGZO thin film transistors (TFTs) with TiO{sub x} depend on the surface polarity change and electronic band structure evolution. This result indicates that TiO{sub x} on the back-channel serves as not only a passivation layer protecting the channel from ambient molecules or process variables but also a control layer of TFT device parameters.

  11. High performance flexible electronics for biomedical devices.

    PubMed

    Salvatore, Giovanni A; Munzenrieder, Niko; Zysset, Christoph; Kinkeldei, Thomas; Petti, Luisa; Troster, Gerhard

    2014-01-01

    Plastic electronics is soft, deformable and lightweight and it is suitable for the realization of devices which can form an intimate interface with the body, be implanted or integrated into textile for wearable and biomedical applications. Here, we present flexible electronics based on amorphous oxide semiconductors (a-IGZO) whose performance can achieve MHz frequency even when bent around hair. We developed an assembly technique to integrate complex electronic functionalities into textile while preserving the softness of the garment. All this and further developments can open up new opportunities in health monitoring, biotechnology and telemedicine.

  12. Effects of color combination and ambient illumination on visual perception time with TFT-LCD.

    PubMed

    Lin, Chin-Chiuan; Huang, Kuo-Chen

    2009-10-01

    An empirical study was carried out to examine the effects of color combination and ambient illumination on visual perception time using TFT-LCD. The effect of color combination was broken down into two subfactors, luminance contrast ratio and chromaticity contrast. Analysis indicated that the luminance contrast ratio and ambient illumination had significant, though small effects on visual perception. Visual perception time was better at high luminance contrast ratio than at low luminance contrast ratio. Visual perception time under normal ambient illumination was better than at other ambient illumination levels, although the stimulus color had a confounding effect on visual perception time. In general, visual perception time was better for the primary colors than the middle-point colors. Based on the results, normal ambient illumination level and high luminance contrast ratio seemed to be the optimal choice for design of workplace with video display terminals TFT-LCD.

  13. Highly bendable characteristics of amorphous indium-gallium-zinc-oxide transistors embedded in a neutral plane

    NASA Astrophysics Data System (ADS)

    Park, Chang Bum; Na, HyungIl; Yoo, Soon Sung; Park, Kwon-Shik

    2015-11-01

    The electromechanical response of an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) fabricated on a polyimide substrate was investigated as a function of the neutral axis location and strain history of the bending system. Here, we demonstrate the pronounced bending characteristics of a-IGZO TFTs and their backplane under extreme mechanical strain when they are embedded in a neutral plane (NP). After being subjected to tensile stress, the devices positioned near the NP were observed to function well against a cyclic bending stress of 2 mm radius with 100,000 times, while TFTs farther from the neutral surface exhibited modified electrical properties.

  14. Enhanced photosensitivity of InGaZnO-TFT with a CuPc light absorption layer

    NASA Astrophysics Data System (ADS)

    Li, Jun; Zhou, Fan; Lin, Hua-Ping; Zhu, Wen-Qing; Zhang, Jian-Hua; Jiang, Xue-Yin; Zhang, Zhi-Lin

    2012-04-01

    A copper phthalocyanine (CuPc) organic semiconductor is capped onto an amorphous indium-gallium-zinc-oxide (InGaZnO) thin film transistor (TFT) to enhance the photosensitivity of InGaZnO-TFT. The CuPc organic semiconductor is served as a light absorption layer and forms a p-n junction with the InGaZnO film. After 60 s white light illumination, light responsivity (R) of InGaZnO-TFT with a CuPc light absorption layer reaches a value of 148.5 A/W at a gate-source voltage (VGS) of 20 V, which is much larger than that (31.2 A/W) of the conventional InGaZnO-TFT. The results are attributed to the following mechanism. First, a CuPc layer is employed as the light absorption layer. Second, CuPc/InGaZnO p-n junction enables the injection of electron into InGaZnO film. Our results indicate that using CuPc as light absorption layer is an effective approach to improve the photosensitivity of InGaZnO-TFT.

  15. After-effects of TFT-LCD display polarity and display colour on the detection of low-contrast objects.

    PubMed

    Mayr, Susanne; Buchner, Axel

    2010-07-01

    Participants performed a word-non-word discrimination task within a car control display emulated on a thin film transistor liquid-crystal display (TFT-LCD). The task simulated an information read-out from a TFT-LCD-based instrument panel. Subsequently, participants performed a low-contrast object detection task that simulated the detection of objects during night-time driving. In experiment 1, words/non-words were presented black-on-white (positive polarity) or white-on-black (negative polarity). In experiments 2 and 3, display colour was additionally manipulated. A positive polarity advantage in the discrimination task was consistently observed. In contrast, positive displays interfered more than negative displays with subsequent detection. The detrimental after-effect of positive polarity displays was strong with white and blue, reduced with amber and absent with red displays. Subjective measures showed a preference for blue over red, but a slight advantage for amber over blue. Implications for TFT-LCD design are derived from the results. STATEMENT OF RELEVANCE: When using TFT-LCDs as car instrument panels, positive polarity red TFT-LCDs are very likely to lead to good instrument readability while at the same time minimising - relative to other colours - the negative effects of an illuminated display on low-contrast object detection during night-time driving.

  16. Exposure to volatile organic compounds and kidney dysfunction in thin film transistor liquid crystal display (TFT-LCD) workers.

    PubMed

    Chang, Ta-Yuan; Huang, Kuei-Hung; Liu, Chiu-Shong; Shie, Ruei-Hao; Chao, Keh-Ping; Hsu, Wen-Hsin; Bao, Bo-Ying

    2010-06-15

    Many volatile organic compounds (VOCs) are emitted during the manufacturing of thin film transistor liquid crystal displays (TFT-LCDs), exposure to some of which has been reported to be associated with kidney dysfunction, but whether such an effect exists in TFT-LCD industry workers is unknown. This cross-sectional study aimed to investigate the association between exposure to VOCs and kidney dysfunction among TFT-LCD workers. The results showed that ethanol (1811.0+/-1740.4 ppb), acetone (669.0+/-561.0 ppb), isopropyl alcohol (187.0+/-205.3 ppb) and propylene glycol monomethyl ether acetate (PGMEA) (102.9+/-102.0 ppb) were the four dominant VOCs present in the workplace. The 63 array workers studied had a risk of kidney dysfunction 3.21-fold and 3.84-fold that of 61 cell workers and 18 module workers, respectively. Workers cumulatively exposed to a total level of isopropyl alcohol, PGMEA and propylene glycol monomethyl ether> or =324 ppb-year had a significantly higher risk of kidney dysfunction (adjusted OR=3.41, 95% CI=1.14-10.17) compared with those exposed to <25 ppb-year after adjustment for potential confounding factors. These findings indicated that array workers might be the group at greatest risk of kidney dysfunction within the TFT-LCD industry, and cumulative exposure to specific VOCs might be associated with kidney dysfunction.

  17. Multi-oxide active layer deposition using Applied Materials Pivot array coater for high-mobility metal oxide TFT

    NASA Astrophysics Data System (ADS)

    Park, Hyun Chan; Scheer, Evelyn; Witting, Karin; Hanika, Markus; Bender, Marcus; Hsu, Hao Chien; Yim, Dong Kil

    2015-11-01

    By controlling a thin indium tin oxide (ITO), indium zinc oxide interface layer between gate insulator and indium gallium zinc oxide (IGZO), the thin-film transistor (TFT) performance can reach higher mobility as conventional IGZO as well as superior stability. For large-area display application, Applied Materials static PVD array coater (Applied Materials GmbH & Co. KG, Alzenau, Germany) using rotary targets has been developed to enable uniform thin layer deposition in display industry. Unique magnet motion parameter optimization in Pivot sputtering coater is shown to provide very uniform thin ITO layer to reach TFT performance with high mobility, not only on small scale, but also on Gen8.5 (2500 × 2200 mm glass size) production system.

  18. Extended-gate-type IGZO electric-double-layer TFT immunosensor with high sensitivity and low operation voltage

    NASA Astrophysics Data System (ADS)

    Liang, Lingyan; Zhang, Shengnan; Wu, Weihua; Zhu, Liqiang; Xiao, Hui; Liu, Yanghui; Zhang, Hongliang; Javaid, Kashif; Cao, Hongtao

    2016-10-01

    An immunosensor is proposed based on the indium-gallium-zinc-oxide (IGZO) electric-double-layer thin-film transistor (EDL TFT) with a separating extended gate. The IGZO EDL TFT has a field-effect mobility of 24.5 cm2 V-1 s-1 and an operation voltage less than 1.5 V. The sensors exhibit the linear current response to label-free target immune molecule in the concentrations ranging from 1.6 to 368 × 10-15 g/ml with a detection limit of 1.6 × 10-15 g/ml (0.01 fM) under an ultralow operation voltage of 0.5 V. The IGZO TFT component demonstrates a consecutive assay stability and recyclability due to the unique structure with the separating extended gate. With the excellent electrical properties and the potential for plug-in-card-type multifunctional sensing, extended-gate-type IGZO EDL TFTs can be promising candidates for the development of a label-free biosensor for public health applications.

  19. TFT-Based Active Pixel Sensors for Large Area Thermal Neutron Detection

    NASA Astrophysics Data System (ADS)

    Kunnen, George

    Due to diminishing availability of 3He, which is the critical component of neutron detecting proportional counters, large area flexible arrays are being considered as a potential replacement for neutron detection. A large area flexible array, utilizing semiconductors for both charged particle detection and pixel readout, ensures a large detection surface area in a light weight rugged form. Such a neutron detector could be suitable for deployment at ports of entry. The specific approach used in this research, uses a neutron converter layer which captures incident thermal neutrons, and then emits ionizing charged particles. These ionizing particles cause electron-hole pair generation within a single pixel's integrated sensing diode. The resulting charge is then amplified via a low-noise amplifier. This document begins by discussing the current state of the art in neutron detection and the associated challenges. Then, for the purpose of resolving some of these issues, recent design and modeling efforts towards developing an improved neutron detection system are described. Also presented is a low-noise active pixel sensor (APS) design capable of being implemented in low temperature indium gallium zinc oxide (InGaZnO) or amorphous silicon (a-Si:H) thin film transistor process compatible with plastic substrates. The low gain and limited scalability of this design are improved upon by implementing a new multi-stage self-resetting APS. For each APS design, successful radiation measurements are also presented using PiN diodes for charged particle detection. Next, detection array readout methodologies are modeled and analyzed, and use of a matched filter readout circuit is described as well. Finally, this document discusses detection diode integration with the designed TFT-based APSs.

  20. Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer.

    PubMed

    Zan, Hsiao-Wen; Yeh, Chun-Cheng; Meng, Hsin-Fei; Tsai, Chuang-Chuang; Chen, Liang-Hao

    2012-07-10

    An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm(2) V(-1) s(-1) to 160 cm(2) V(-1) s(-1). This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.

  1. Present status of amorphous In-Ga-Zn-O thin-film transistors.

    PubMed

    Kamiya, Toshio; Nomura, Kenji; Hosono, Hideo

    2010-08-01

    The present status and recent research results on amorphous oxide semiconductors (AOSs) and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In-Ga-Zn-O (a-IGZO) are expected to be the channel material of TFTs in next-generation flat-panel displays because a-IGZO TFTs satisfy almost all the requirements for organic light-emitting-diode displays, large and fast liquid crystal and three-dimensional (3D) displays, which cannot be satisfied using conventional silicon and organic TFTs. The major insights of this review are summarized as follows. (i) Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs. (ii) A sixth-generation (6G) process is demonstrated for 32″ and 37″ displays. (iii) An 8G sputtering apparatus and a sputtering target have been developed. (iv) The important effect of deep subgap states on illumination instability is revealed. (v) Illumination instability under negative bias has been intensively studied, and some mechanisms are proposed. (vi) Degradation mechanisms are classified into back-channel effects, the creation of traps at an interface and in the gate insulator, and the creation of donor states in annealed a-IGZO TFTs by the Joule heating; the creation of bulk defects should also be considered in the case of unannealed a-IGZO TFTs. (vii) Dense passivation layers improve the stability and photoresponse and are necessary for practical applications. (viii) Sufficient knowledge of electronic structures and electron transport in a-IGZO has been accumulated to construct device simulation models.

  2. TOPICAL REVIEW: Present status of amorphous In-Ga-Zn-O thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kamiya, Toshio; Nomura, Kenji; Hosono, Hideo

    2010-08-01

    The present status and recent research results on amorphous oxide semiconductors (AOSs) and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In-Ga-Zn-O (a-IGZO) are expected to be the channel material of TFTs in next-generation flat-panel displays because a-IGZO TFTs satisfy almost all the requirements for organic light-emitting-diode displays, large and fast liquid crystal and three-dimensional (3D) displays, which cannot be satisfied using conventional silicon and organic TFTs. The major insights of this review are summarized as follows. (i) Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs. (ii) A sixth-generation (6G) process is demonstrated for 32'' and 37'' displays. (iii) An 8G sputtering apparatus and a sputtering target have been developed. (iv) The important effect of deep subgap states on illumination instability is revealed. (v) Illumination instability under negative bias has been intensively studied, and some mechanisms are proposed. (vi) Degradation mechanisms are classified into back-channel effects, the creation of traps at an interface and in the gate insulator, and the creation of donor states in annealed a-IGZO TFTs by the Joule heating; the creation of bulk defects should also be considered in the case of unannealed a-IGZO TFTs. (vii) Dense passivation layers improve the stability and photoresponse and are necessary for practical applications. (viii) Sufficient knowledge of electronic structures and electron transport in a-IGZO has been accumulated to construct device simulation models.

  3. Present status of amorphous In–Ga–Zn–O thin-film transistors

    PubMed Central

    Kamiya, Toshio; Nomura, Kenji; Hosono, Hideo

    2010-01-01

    The present status and recent research results on amorphous oxide semiconductors (AOSs) and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In–Ga–Zn–O (a-IGZO) are expected to be the channel material of TFTs in next-generation flat-panel displays because a-IGZO TFTs satisfy almost all the requirements for organic light-emitting-diode displays, large and fast liquid crystal and three-dimensional (3D) displays, which cannot be satisfied using conventional silicon and organic TFTs. The major insights of this review are summarized as follows. (i) Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs. (ii) A sixth-generation (6G) process is demonstrated for 32″ and 37″ displays. (iii) An 8G sputtering apparatus and a sputtering target have been developed. (iv) The important effect of deep subgap states on illumination instability is revealed. (v) Illumination instability under negative bias has been intensively studied, and some mechanisms are proposed. (vi) Degradation mechanisms are classified into back-channel effects, the creation of traps at an interface and in the gate insulator, and the creation of donor states in annealed a-IGZO TFTs by the Joule heating; the creation of bulk defects should also be considered in the case of unannealed a-IGZO TFTs. (vii) Dense passivation layers improve the stability and photoresponse and are necessary for practical applications. (viii) Sufficient knowledge of electronic structures and electron transport in a-IGZO has been accumulated to construct device simulation models. PMID:27877346

  4. Study of Fused Thiophene Based Organic Semiconductors and Interfacial Self-Assembled Monolayer (SAM) for Thin-Film Transistor (TFT) Application

    NASA Astrophysics Data System (ADS)

    Youn, Jangdae

    In this thesis, the molecular packing motifs of our newly designed fused thiophenes, benzo[d,d]thieno[3,2-b;4,5-b]dithiophene (BTDT) derivatives, were studied by utilizing grazing incidence wide angle X-ray scattering (GIWAXS). Considering the potential of fused thiophene molecules as an environmentally stable, high performance semiconductor building block, it must be an important groundwork to investigate their thin film structures in relation to molecular structures, single crystal structures, and organic thin-film transistors (OTFT) performances. OTFT device performance is not only determined by semiconductor materials, but also influenced by the interfacial properties. Since there are three major components in TFT structures---electrodes, semiconductors, and dielectrics, two types of major interfaces exist. One is the semiconductor-electrode interface, and the other is the semiconductor-dielectric interface. Both of these interfaces have critical roles for TFT operation. For example, the semiconductor-electrode interface determines the charge injection barrier. Before charge carriers go through the electrode (source)-semiconductor-electrode (drain) pathways, the energy gaps between the work function of the electrodes and the HOMO energy of the semiconductor materials must be overcome for hole injection, or the energy gap between the metal work function of the electrodes and the LUMO energy of the semiconductor materials must be overcome for electron injection. These charge injection barriers are largely determined by the energetic structure of the semiconductor material and work function of the electrode. However, the size of energy gap can be modified by introducing an organic self-assembled monolayer (SAM) on the surface of metal electrode. In addition, the structure of semiconductor films, especially within several monolayers right above the electrode, is greatly influenced by the SAM, and it changes charge injection property of OTFT devices. In this thesis

  5. Identification and deletion of Tft1, a predicted glycosyltransferase necessary for cell wall β-1,3;1,4-glucan synthesis in Aspergillus fumigatus.

    PubMed

    Samar, Danial; Kieler, Joshua B; Klutts, J Stacey

    2015-01-01

    Aspergillus fumigatus is an environmental mold that causes severe, often fatal invasive infections in immunocompromised patients. The search for new antifungal drug targets is critical, and the synthesis of the cell wall represents a potential area to find such a target. Embedded within the main β-1,3-glucan core of the A. fumigatus cell wall is a mixed linkage, β-D-(1,3;1,4)-glucan. The role of this molecule or how it is synthesized is unknown, though it comprises 10% of the glucans within the wall. While this is not a well-studied molecule in fungi, it has been studied in plants. Using the sequences of two plant mixed linkage glucan synthases, a single ortholog was identified in A. fumigatus (Tft1). A strain lacking this enzyme (tft1Δ) was generated along with revertant strains containing the native gene under the control of either the native or a strongly expressing promoter. Immunofluorescence staining with an antibody against β-(1,3;1,4)-glucan and biochemical quantification of this polysaccharide in the tft1Δ strain demonstrated complete loss of this molecule. Reintroduction of the gene into the knockout strain yielded reappearance in amounts that correlated with expected expression of the gene. The loss of Tft1 and mixed linkage glucan yielded no in vitro growth phenotype. However, there was a modest increase in virulence for the tft1Δ strain in a wax worm model. While the precise roles for β-(1,3;1,4)-glucan within A. fumigatus cell wall are still uncertain, it is clear that Tft1 plays a pivotal role in the biosynthesis of this cell wall polysaccharide.

  6. High performance thin film transistor (flex-TFT) with textured nanostructure ZnO film channel fabricated by exploiting electric double layer gate insulator

    NASA Astrophysics Data System (ADS)

    Ghimire, Rishi Ram; Raychaudhuri, A. K.

    2017-01-01

    We report a flexible thin film transistor (flex-TFT) fabricated on a commonly available polyimide (Kapton®) tape with a channel of highly textured nanocrystalline ZnO film grown by pulsed laser deposition. The flex-TFT with an electric double layer (EDL) gate insulator shows a low threshold for operation (Vth ≤ 1 V), an ON/OFF ratio reaching ≈107 and a subthreshold swing ≈75 mV/dec. The superior performance is enabled by a high saturation mobility (μs ≈ 70 cm2/V s) of the highly textured nanocrystalline channel. The low Vth arises from large charge density (≈1014/cm2) induced into the channel by EDL gate insulator. The large charge density induced by the EDL gate dielectric also enhances the Hall mobility in the film and brings down the sheet resistance by nearly 2 orders, which leads to large ON/OFF ratio. The flex-TFT operation can be sustained with reproducibility when the TFT is bent down to a radius of curvature ≈2 cm.

  7. New Product Development for Green and Low-Carbon Products—A Case Study of Taiwan's TFT-LCD Manufacturer

    NASA Astrophysics Data System (ADS)

    Lin, Chun-Yu; Lee, Amy H. I.

    2011-11-01

    Green supply chain has become an important topic these days due to pollution, global warming, extreme climatic events, etc. A green product is manufactured with the goal of reducing the damage to the environment and limiting the use of energy and other resources at any stage of its life, including raw materials, manufacture, use, and disposal. Carbon footprint is a good measure of the impact that a product has on the environment, especially in climate change, in the entire lifetime of the product. Carbon footprint is directly linked to CO2 emission; thus, the reduction of CO2 emission must be considered in the product life cycle. Although more and more researchers are working on the green supply chain management in the past few years, few have incorporated CO2 emission or carbon footprint into the green supply chain system. Therefore, this research aims to propose an integrated model for facilitating the new product development (NPD) for green and low-carbon products. In this research, a systematic model based on quality function deployment (QFD) is constructed for developing green and low-carbon products in a TFT-LCD manufacturer. Literature review and interviews with experts are done first to collect the factors for developing and manufacturing green and low-carbon products. Fuzzy Delphi method (FDM) is applied next to extract the important factors, and fuzzy interpretive structural modeling (FISM) is used subsequently to understand the relationships among factors. A house of quality (HOQ) for product planning is built last. The results shall provide important information for a TFT-LCD firm in designing a new product.

  8. Schottky Barrier Thin Film Transistor (SB-TFT) on low-temperature polycrystalline silicon

    NASA Astrophysics Data System (ADS)

    De Iacovo, A.; Ferrone, A.; Colace, L.; Minotti, A.; Maiolo, L.; Pecora, A.

    2016-12-01

    We report on the fabrication and characterization of Schottky barrier transistors on polycrystalline silicon. The transistors were realized exploiting Cr-Si and Ti-Si Schottky barrier with a low thermal budget process, compatible with polymeric, ultraflexible substrates. We obtained devices with threshold voltages as low as 1.7 V (for n channel) and 4 V (for p channel) with channel lengths ranging from 2 to 40 μm. Resulting on/off ratios are as high as 5 · 103. The devices showed threshold voltages and subthreshold slopes comparable with already published N- and P-MOS devices realized with the same process on polyimide substrates thus representing a cheaper and scalable alternative to ultraflexible transistors with doped source and drain.

  9. Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

    PubMed Central

    Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

    2016-01-01

    A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully. PMID:27725695

  10. Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

    2016-10-01

    A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully.

  11. Zinc oxide nanowire networks for macroelectronic devices

    NASA Astrophysics Data System (ADS)

    Unalan, Husnu Emrah; Zhang, Yan; Hiralal, Pritesh; Dalal, Sharvari; Chu, Daping; Eda, Goki; Teo, K. B. K.; Chhowalla, Manish; Milne, William I.; Amaratunga, Gehan A. J.

    2009-04-01

    Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics.

  12. Full-Swing InGaZnO Thin Film Transistor Inverter with Depletion Load

    NASA Astrophysics Data System (ADS)

    Lee, Jeong-Min; Cho, In-Tak; Lee, Jong-Ho; Kwon, Hyuck-In

    2009-10-01

    A high performance amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) inverter is implemented using the enhancement mode driver and the depletion mode load. The threshold voltage of the TFT is easily controlled by adjusting the active layer thickness in a-IGZO TFTs. The proposed inverter shows much improved switching characteristics including higher voltage gain, wider swing range, and higher noise margins compared to the conventional inverter with an enhancement load.

  13. Optimization of pulsed laser deposited ZnO thin-film growth parameters for thin-film transistors (TFT) application

    NASA Astrophysics Data System (ADS)

    Gupta, Manisha; Chowdhury, Fatema Rezwana; Barlage, Douglas; Tsui, Ying Yin

    2013-03-01

    In this work we present the optimization of zinc oxide (ZnO) film properties for a thin-film transistor (TFT) application. Thin films, 50±10 nm, of ZnO were deposited by Pulsed Laser Deposition (PLD) under a variety of growth conditions. The oxygen pressure, laser fluence, substrate temperature and annealing conditions were varied as a part of this study. Mobility and carrier concentration were the focus of the optimization. While room-temperature ZnO growths followed by air and oxygen annealing showed improvement in the (002) phase formation with a carrier concentration in the order of 1017-1018/cm3 with low mobility in the range of 0.01-0.1 cm2/V s, a Hall mobility of 8 cm2/V s and a carrier concentration of 5×1014/cm3 have been achieved on a relatively low temperature growth (250 °C) of ZnO. The low carrier concentration indicates that the number of defects have been reduced by a magnitude of nearly a 1000 as compared to the room-temperature annealed growths. Also, it was very clearly seen that for the (002) oriented films of ZnO a high mobility film is achieved.

  14. Improving electrical performance and bias stability of HfInZnO-TFT with optimizing the channel thickness

    SciTech Connect

    Li, Jun; Zhang, Zhi-Lin; Ding, Xing-Wei; Jiang, Xue-Yin; Zhang, Jian-Hua; Zhang, Hao

    2013-10-15

    RF magnetron sputtered HfInZnO film and atomic layer deposition (ALD) Al{sub 2}O{sub 3} film were employed for thin film transistors (TFTs) as channel layer and gate insulator, respectively. To achieve HfInZnO-TFT with high performance and good bias stability, the thickness of HfInZnO active layer was optimized. The performance of HfInZnO-TFTs was found to be thickness dependent. As the HfInZnO active layer got thicker, the leakage current greatly increased from 1.73 × 10{sup −12} to 2.54 × 10{sup −8} A, the threshold voltage decreased from 7.4 to −4.7 V, while the subthreshold swing varied from 0.41 to 1.07 V/decade. Overall, the HfInZnO film showed superior performance, such as saturation mobility of 6.4 cm{sup 2}/V s, threshold voltage of 4.2 V, subthreshold swing of 0.43 V/decade, on/off current ratio of 3 × 10{sup 7} and V{sub th} shift of 3.6 V under V{sub GS}= 10 V for 7200 s. The results demonstrate the possibility of fabricating TFTs using HfInZnO film as active layer and using ALD Al{sub 2}O{sub 3} as gate insulator.

  15. In Situ Laser Crystallization of Amorphous Silicon for TFT Applications: Controlled Ultrafast Studies in the Dynamic TEM

    SciTech Connect

    Taheri, M; Teslich, N; Lu, J P; Morgan, D; Browning, N

    2008-02-08

    An in situ method for studying the role of laser energy on the microstructural evolution of polycrystalline Si is presented. By monitoring both laser energy and microstructural evolution simultaneously in the dynamic transmission electron microscope, information on grain size and defect concentration can be correlated directly with processing conditions. This proof of principle study provides fundamental scientific information on the crystallization process that has technological importance for the development of thin film transistors. In conclusion, we successfully developed a method for studying UV laser processing of Si films in situ on nanosecond time scales, with ultimate implications for TFT application improvements. In addition to grain size distribution as a function of laser energy density, we found that grain size scaled with laser energy in general. We showed that nanosecond time resolution allowed us to see the nucleation and growth front during processing, which will help further the understanding of microstructural evolution of poly-Si films for electronic applications. Future studies, coupled with high resolution TEM, will be performed to study grain boundary migration, intergranular defects, and grain size distribution with respect to laser energy and adsorption depth.

  16. Patterning of Transparent Conducting Oxide Thin Films by Wet Etching for a-Si:H TFT-LCDs

    SciTech Connect

    Lan, J. H.; Kanicki, J.; Catalano, A.; Keane, J.; Den Boer, W.; Gu, T.

    1996-12-01

    The patterning characteristics of the indium tin oxide (ITO) thin films having different microstructures were investigated. Several etching solutions (HCl, HBr, and their mixtures with HNO3) were used in this study. We have found that ITO films containing a larger volume fraction of the amorphous phase show higher etch rates than those containing a larger volume fraction of the crystalline phase. Also, the crystalline ITO fims have shown a very good uniformity in patterning, and following the etching no ITO residue (unetched ITO) formation has been observed. In contrast, ITO residues were found after the etching of the films containing both amorphous and crystalline phases. We have also developed a process for the fabrication of the ITO with a tapered edge profile. The taper angle can be controlled by varying the ratio of HNO3 to the HCl in the etching solutions. Finally, ITO films have been found to be chemically unstable in a hydrogen containing plasma environment. On the contrary, aluminum doped zinc oxide (AZO) films, having an optical transmittance and electrical resisitivity comparable to ITO films, are very stable in the same hydrogen containing plasma environment. In addition, a high etch rate, no etching residue formation, and a uniform etching have been found for the AZO films, which make them suitable for a-Si:H TFT-LCD applications.

  17. Half-Corbino short-channel amorphous In-Ga-Zn-O thin-film transistors with a-SiOx or a-SiOx/a-SiNx passivation layers

    NASA Astrophysics Data System (ADS)

    Zhao, Chumin; Fung, Tze-Ching; Kanicki, Jerzy

    2016-06-01

    We investigated the electrical properties and stability of short-channel half-Corbino amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). In the linear region, the fabricated half-Corbino a-IGZO TFT with a channel length of 4.5 μm achieves a geometrical factor (fg) of ∼2.7, a threshold voltage (VT) of ∼2.4 V, a field-effect mobility (μeff) of ∼15 cm2/Vs, a subthreshold swing (SS) of ∼320 mV/dec and an off-current (IOFF) < 10-13 A. In the saturation region, asymmetric electrical characteristics such as drain current were observed under different drain bias conditions. The electrical properties asymmetry of half-Corbino a-IGZO TFTs was explained by various geometrical factors owing to the short-channel effect. The reduced VT and increased SS at VDS = 15 V is explained by the drain-induced Schottky barrier lowering. In addition, the bias-temperature stress (BTS) was performed for half-Corbino a-IGZO TFTs with both amorphous silicon oxide (a-SiOx) single layer and a-SiOx/amorphous silicon nitride (a-SiNx) bilayer passivation (PV) structures. The device with bilayer PV shows a threshold voltage shift (ΔVT) of +2.07 and -0.5 V under positive (PBTS = +15 V) and negative BTS (NBTS = -15 V) at 70 °C for 10 ks, respectively. The origins of ΔVT during PBTS and NBTS for half-Corbino a-IGZO TFTs with single and bilayer PV structures were studied. To improve the device electrical stability, the bilayer PV structure should be used.

  18. Metal Oxide Thin Film Transistors on Paper Substrate: Fabrication, Characterization, and Printing Process

    NASA Astrophysics Data System (ADS)

    Choi, Nack-Bong

    Flexible electronics is an emerging next-generation technology that offers many advantages such as light weight, durability, comfort, and flexibility. These unique features enable many new applications such as flexible display, flexible sensors, conformable electronics, and so forth. For decades, a variety of flexible substrates have been demonstrated for the application of flexible electronics. Most of them are plastic films and metal foils so far. For the fundamental device of flexible circuits, thin film transistors (TFTs) using poly silicon, amorphous silicon, metal oxide and organic semiconductor have been successfully demonstrated. Depending on application, low-cost and disposable flexible electronics will be required for convenience. Therefore it is important to study inexpensive substrates and to explore simple processes such as printing technology. In this thesis, paper is introduced as a new possible substrate for flexible electronics due to its low-cost and renewable property, and amorphous indium gallium zinc oxide (a-IGZO) TFTs are realized as the promising device on the paper substrate. The fabrication process and characterization of a-IGZO TFT on the paper substrate are discussed. a-IGZO TFTs using a polymer gate dielectric on the paper substrate demonstrate excellent performances with field effect mobility of ˜20 cm2 V-1 s-1, on/off current ratio of ˜106, and low leakage current, which show the enormous potential for flexible electronics application. In order to complement the n-channel a-IGZO TFTs and then enable complementary metal-oxide semiconductor (CMOS) circuit architectures, cuprous oxide is studied as a candidate material of p-channel oxide TFTs. In this thesis, a printing process is investigated as an alternative method for the fabrication of low-cost and disposable electronics. Among several printing methods, a modified offset roll printing that prints high resolution patterns is presented. A new method to fabricate a high resolution

  19. Room-temperature-operated sensitive hybrid gas sensor based on amorphous indium gallium zinc oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Zan, Hsiao-Wen; Li, Chang-Hung; Yeh, Chun-Cheng; Dai, Ming-Zhi; Meng, Hsin-Fei; Tsai, Chuang-Chuang

    2011-06-01

    An organic sensing layer is capped onto an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) to form a hybrid sensor. The organic layer, served as a second gate, forms a p-n junction with the a-IGZO film. Oxidizing or reducing vapor molecules act like electron acceptors or electron donors to change the potential of the organic layer and the current of a-IGZO TFT. A sensitive and reversible response to 100 ppb ammonia and 100 ppb acetone is obtained at room temperature. This letter opens a route to develop low-cost large-area bio/chemical sensor arrays based on the emerging a-IGZO TFT technology.

  20. Noise-driven signal transmission device using molecular dynamics of organic polymers

    NASA Astrophysics Data System (ADS)

    Asakawa, Naoki; Umemura, Koichiro; Fujise, Shinya; Yazawa, Koji; Shimizu, Tadashi; Tansho, Masataka; Kanki, Teruo; Tanaka, Hidekazu

    2014-01-01

    Stochastic threshold devices using a trap-filling transition (TFT) coupled with molecular dynamics in poly(3-alkylthiophene)s were fabricated as potential key devices for noise-driven bioinspired sensors and information processors. This article deals with variable-temperature direct current conductivity and alternating current impedance measurements for vertical-type device elements of Au/regioregular poly(3-decylthiophene) ((RR-P3DT) (thickness: 100 nm)/Au, which show multiple conducting states and quasi-stochastic transitions between these states. Noise measurements indicate the ω-2-type (if VVTFT) power spectral densities, where V and VTFT are an applied voltage and the voltage for TFT, respectively. The noise generation is due to the TFT associated with twist dynamics of π-conjugated polymers near the order-disorder phase transition (ODT). At 298 K, the quasi-stochastic behavior is more noticeable for RR-P3DT than poly(3-hexylthiophene). The quasi-stochastic property is employed to a stochastic one-directional signal transmitting device using optical-electric conversion. The dynamics of ODT for powder samples were also investigated by differential scanning calorimetry measurements and high-resolution solid-state C13 nuclear magnetic resonance spectroscopy, and the correlation of the molecular structure and dynamics with electric properties was discussed.

  1. Evaluation of methanogenic treatment of TMAH (tetra-methyl ammonium hydroxide) in a full-scale TFT-LCD wastewater treatment process.

    PubMed

    Hu, T H; Whang, L M; Lei, C N; Chen, C F; Chiang, T Y; Lin, L B; Chen, H W; Liu, P W G; Cheng, S S

    2010-01-01

    This study evaluated TMAH biodegradation under methanogenic conditions. Under methanogenic conditions, a sludge from a full-scale UASB treating TFT-LCD wastewater was able to degrade 2,000 mg/L of TMAH within 10 h and attained a specific degradation rate of 19.2 mgTMAH/gVSS-h. Furthermore, several chemicals including some surfactants, DMSO, and sulfate were examined for their potential inhibitory effects on TMAH biodegradation under methanogenic conditions. The results indicated that surfactant S1 (up to 2%) and DMSO (up to 1,000 mg/L) presented negligible inhibitory effects on TMAH degradation, while surfactant S2 (0.2-1%) might inhibit methanogenic reaction without any TMAH degradation for 3-5 h. At sulfate concentrations higher than 300 mg/L, a complete inhibition of methanogenic reaction and TMAH biodegradation was observed. Results from cloning and sequencing of archaeal 16S rRNA gene fragments showed that Methanosarcina barkeri and Methanosarcina mazei were the dominant methanogens in the UASB treating TMAH-containing TFT-LCD wastewater.

  2. Real-time application of critical dimension measurement of TFT-LCD pattern using a newly proposed 2D image-processing algorithm

    NASA Astrophysics Data System (ADS)

    Lee, Jeong-Ho; Kim, You-Sik; Kim, Sung-Ryoung; Lee, Il-Hwan; Pahk, Heui-Jae

    2008-07-01

    A critical dimension measurement system for TFT-LCD patterns has been implemented in this study. To improve the measurement accuracy, an imaging auto-focus algorithm, fast pattern-matching algorithm, and precise edge detection algorithm with subpixel accuracy have been developed and implemented in the system. The optimum focusing position can be calculated using the image focus estimator. The two-step auto-focusing technique has been newly proposed for various LCD patterns, and various focus estimators have been compared to select a stable and accurate one. Fast pattern matching and subpixel edge detection have been developed for measurement. The new approach, called NEMC, is based on edge detection for the selection of influential points; in this approach, points having a strong edge magnitude are only used in the matching procedure. To accelerate pattern matching, point correlation and an image pyramid structure are combined. Edge detection is the most important technique in a vision inspection system. A two-stage edge detection algorithm has been introduced. In the first stage, a first order derivative operator such as the Sobel operator is used to place the edge points and to find the edge directions using a least-square estimation method with pixel accuracy. In the second stage, an eight-connected neighborhood of the estimated edge points is convolved with the LoG (Laplacian of Gaussian) operator, and the LoG-filtered image can be modeled as a continuous function using the facet model. The measurement results of the various patterns are finally presented. The developed system has been successfully used in the TFT-LCD manufacturing industry, and repeatability of less than 30 nm (3 σ) can be obtained with a very fast inspection time.

  3. Amorphous Indium Gallium Zinc Oxide Semiconductor Thin Film Transistors Using O2 Plasma Treatment on the SiNx Gate Insulator

    NASA Astrophysics Data System (ADS)

    Kim, Woong-Sun; Moon, Yeon-Keon; Lee, Sih; Kang, Byung-Woo; Kim, Kyung-Taek; Lee, Je-Hun; Kim, Joo-Han; Ahn, Byung-Du; Park, Jong-Wan

    2010-08-01

    In this study, we investigated the role of processing parameters on the electrical characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) fabricated using DC magnetron sputtering at room temperature. Processing parameters including the oxygen partial pressure, annealing temperature, and channel thickness have a great influence on TFT performance and better devices are obtained at a low oxygen partial pressure, annealing at 200 °C, and a low channel thickness. We attempted to improve the a-IGZO TFT performance and stability under a gate bias stress using O2 plasma treatment. With an O2 plasma treated gate insulator, remarkable properties including excellent bias stability as well as a field effect mobility (µFE) of 11.5 cm2 V-1 s-1, a subthreshold swing (S) of 0.59 V/decade, a turn-on voltage (VON) of -1.3 V, and an on/off current ratio (ION/IOFF) of 105 were achieved.

  4. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications

    NASA Astrophysics Data System (ADS)

    Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2016-05-01

    Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm2 V‑1 sec‑1, and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

  5. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications

    PubMed Central

    Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2016-01-01

    Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm2 V−1 sec−1, and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity. PMID:27157914

  6. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

    PubMed

    Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2016-05-09

    Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(-1) sec(-1), and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

  7. Electrical features of an amorphous indium-gallium-zinc-oxide film transistor using a double active matrix with different oxygen contents

    NASA Astrophysics Data System (ADS)

    Koo, Ja Hyun; Kang, Tae Sung; Hong, Jin Pyo

    2012-05-01

    The electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) are systematically studied using a double a-IGZO active layer that is composed of a-IGZO x (oxygen-ion-poor region) and a-IGZO y (oxygen-ion-rich-region). An active layer is designed to have a serially-stacked bi-layer matrix with different oxygen contents, providing the formation of different electron conduction channels. Two different oxygen contents in the active layer are obtained by varying the O2 partial pressure during sputtering. The a-IGZO TFT based on a double active layer exhibits a high mobility of 9.1 cm2/Vsec, a threshold voltage (V T ) of 16.5 V, and ΔV T shifts of less than 1.5 V under gate voltage stress. A possible electrical sketch for the double active layer channel is also discussed.

  8. Thermally Stable and Sterilizable Polymer Transistors for Reusable Medical Devices.

    PubMed

    Kyaw, Aung Ko Ko; Jamalullah, Feroz; Vaithieswari, Loga; Tan, Mein Jin; Zhang, Lian; Zhang, Jie

    2016-04-20

    We realize a thermally stable polymer thin film transistor (TFT) that is able to endure the standard autoclave sterilization for reusable medical devices. A thermally stable semiconducting polymer poly[4-(4,4-dihexadecyl-4Hcyclopenta[1,2-b:5,4-b]dithiophen-2-yl)-alt[1,2,5]thiadiazolo [3,4c] pyridine], which is stable up to 350 °C in N2 and 200 °C in air, is used as channel layer, whereas the biocompatible SU-8 polymer is used as a flexible dielectric layer, in addition to conventional SiO2 dielectric layer. Encapsulating with in-house designed composite film laminates as moisture barrier, both TFTs using either SiO2 or SU-8 dielectric layer exhibit good stability in sterilized conditions without significant change in mobility and threshold voltage. After sterilization for 30 min in autoclave, the mobility drops only 15%; from as-fabricated mobility of 1.4 and 1.3 cm(2) V(-1) s(-1) to 1.2 and 1.1 cm(2) V(-1) s(-1) for TFTs with SiO2 and SU-8 dielectric layer, respectively. Our TFT design along with experimental results reveal the opportunity on organic/polymer flexible TFTs in sterilizable/reusable medical device application.

  9. Light-bias coupling erase process for non-volatile zinc tin oxide TFT memory with a nickel nanocrystals charge trap layer

    NASA Astrophysics Data System (ADS)

    Li, Jeng-Ting; Liu, Li-Chih; Ke, Po-Hsien; Chen, Jen-Sue; Jeng, Jiann-Shing

    2016-03-01

    A nonvolatile charge trapping memory is demonstrated on a thin film transistor (TFT) using a solution processed ultra-thin (~7 nm) zinc tin oxide (ZTO) semiconductor layer with an Al2O3/Ni-nanocrystals (NCs)/SiO2 dielectric stack. A positive threshold voltage (V TH) shift of 7 V is achieved at gate programming voltage of 40 V for 1 s but the state will not be erased by applying negative gate voltage. However, the programmed V TH shift can be expediently erased by applying a gate voltage of  -10 V in conjunction with visible light illumination for 1 s. It is found that the sub-threshold swing (SS) deteriorates slightly under light illumination, indicating that photo-ionized oxygen vacancies (V\\text{o}+ and/or V\\text{o}++ ) are trapped at the interface between Al2O3 and ZTO, which assists the capture of electrons discharged from the Ni NCs charge trapping layer. The light-bias coupling action and the role of ultra-thin ZTO thickness are discussed to elucidate the efficient erasing mechanism.

  10. Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

    SciTech Connect

    Lai, Hsin-Cheng; Pei, Zingway; Jian, Jyun-Ruri; Tzeng, Bo-Jie

    2014-07-21

    In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology is suitable for use in flexible displays.

  11. Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

    NASA Astrophysics Data System (ADS)

    Lai, Hsin-Cheng; Pei, Zingway; Jian, Jyun-Ruri; Tzeng, Bo-Jie

    2014-07-01

    In this study, the Al2O3 nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm2/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology is suitable for use in flexible displays.

  12. Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer

    NASA Astrophysics Data System (ADS)

    Zan, Hsiao-Wen; Chen, Wei-Tsung; Hsueh, Hsiu-Wen; Kao, Shih-Chin; Ku, Ming-Che; Tsai, Chuang-Chuang; Meng, Hsin-Fei

    2010-11-01

    This work demonstrates a real-time visible-light phototransistor comprised of a wide-band-gap amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) and a narrow-band-gap polymeric capping layer. The capping layer and the IGZO layer form a p-n junction diode. The p-n junction absorbs visible light and consequently injects electrons into the IGZO layer, which in turn affects the body voltage as well as the threshold voltage of a-IGZO TFT. The hysteresis behavior due to the charges at IGZO back interface is also discussed.

  13. Noise-driven signal transmission device using molecular dynamics of organic polymers

    NASA Astrophysics Data System (ADS)

    Asakawa, Naoki; Kanki, Teruo; Tanaka, Hidekazu

    2014-03-01

    Stochastic threshold devices using trap-filling transition coupled with molecular dynamics in poly(3-alkyl thiophene)s [P3ATs] were fabricated as potential key devices for noise-driven bio-inspired sensors and infor- mation processors. This article deals with variable-temperature direct current conductivity and alternating current impedance measurements for vertical-type device elements of Au/regioregular poly(3-decylthiophene) [RR-P3DT] (thickness:100nm)/Au, which show multiple conducting states and quasi-stochastic transitions between these states. Noise measurements indicate the ω-2-type (if V < VTFT = 10V) and ω-1-type (if V > VTFT) power spectral densities, where V and VTFT are an applied voltage and the voltage for trap-filling transition(TFT),respectively. The noise generation is due to TFT that associated with twist dynamics of π-conjugated polymers near the order-disorder phase transition. At 298K, the quasi-stochastic behavior is more noticeable for RR-P3DT than poly(3-hexylthiophene) [RR-P3HT]. The dynamics of the order-disorder phase transition (ODT) for powder samples were also investigated by differential scanning calorimetry (DSC) measurements and high-resolution solid-state C NMR spectroscopy, and the correlation of molecular structure and dynamics with electric properties was discussed.

  14. Structural and Catalytic Differences between Two FADH2-Dependent Monooxygenases: 2,4,5-TCP 4-Monooxygenase (TftD) from Burkholderia cepacia AC1100 and 2,4,6-TCP 4-Monooxygenase (TcpA) from Cupriavidus necator JMP134

    PubMed Central

    Hayes, Robert P.; Webb, Brian N.; Subramanian, Arun Kumar; Nissen, Mark; Popchock, Andrew; Xun, Luying; Kang, ChulHee

    2012-01-01

    2,4,5-TCP 4-monooxygenase (TftD) and 2,4,6-TCP 4-monooxygenase (TcpA) have been discovered in the biodegradation of 2,4,5-trichlorophenol (2,4,5-TCP) and 2,4,6-trichlorophenol (2,4,6-TCP). TcpA and TftD belong to the reduced flavin adenine dinucleotide (FADH2)-dependent monooxygenases and both use 2,4,6-TCP as a substrate; however, the two enzymes produce different end products. TftD catalyzes a typical monooxygenase reaction, while TcpA catalyzes a typical monooxygenase reaction followed by a hydrolytic dechlorination. We have previously reported the 3D structure of TftD and confirmed the catalytic residue, His289. Here we have determined the crystal structure of TcpA and investigated the apparent differences in specificity and catalysis between these two closely related monooxygenases through structural comparison. Our computational docking results suggest that Ala293 in TcpA (Ile292 in TftD) is possibly responsible for the differences in substrate specificity between the two monooxygenases. We have also identified that Arg101 in TcpA could provide inductive effects/charge stabilization during hydrolytic dechlorination. The collective information provides a fundamental understanding of the catalytic reaction mechanism and the parameters for substrate specificity. The information may provide guidance for designing bioremediation strategies for polychlorophenols, a major group of environmental pollutants. PMID:22949829

  15. AC Stress-Induced Degradation of Amorphous InGaZnO Thin Film Transistor Inverter

    NASA Astrophysics Data System (ADS)

    Kim, Dae-Hwan; Kong, Dongsik; Kim, Sungchul; Jeon, Young Woo; Kim, Yongsik; Kim, Dong Myong; Kwon, Hyuck-In

    2011-09-01

    The degradation of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) inverter operation is investigated under AC pulse stresses. From the extraction of subgap density of states (DOSs), the dominant mechanism of the pulse stress-induced degradation of driver TFT is considered as the increase of acceptor-like deep states, while that of the load TFT is attributed to the increased number of electrons trapped into the interface and/or a-IGZO thin films. We also observe that the rising and falling time of the induced pulse affects each TFT of the inverter in a different manner, and discuss the related mechanism of this phenomenon.

  16. DC sputtered amorphous In-Sn-Zn-O thin-film transistors: Electrical properties and stability

    NASA Astrophysics Data System (ADS)

    Nakata, Mitsuru; Zhao, Chumin; Kanicki, Jerzy

    2016-02-01

    In this study, we investigated the electrical properties of DC sputtered amorphous In-Sn-Zn-O (a-ITZO) thin-film transistors (TFTs) fabricated under various process conditions. Fabricated a-ITZO TFTs achieved a threshold voltage (VT) of 1.0 V, subthreshold swing (SS) of 0.38 V/dec and field-effect mobility (μeff) of around 30 cm2/V s. An analytical field-effect mobility model is proposed for a-ITZO TFTs with key parameters extracted using different methods. The impacts of a-ITZO channel thickness and oxygen gas flow ratio on device performance were evaluated. Finally, the a-ITZO TFT bias-temperature stress (BTS) induced electrical instability was studied. In comparison to amorphous In-Ga-Zn-O (a-IGZO) TFTs, improved electrical stability was observed for a-ITZO TFTs using exactly the same BTS conditions.

  17. Surface potential measurement on contact resistance of amorphous-InGaZnO thin film transistors by Kelvin probe force microscopy

    NASA Astrophysics Data System (ADS)

    Han, Zhiheng; Xu, Guangwei; Wang, Wei; Lu, Congyan; Lu, Nianduan; Ji, Zhuoyu; Li, Ling; Liu, Ming

    2016-07-01

    Contact resistance plays an important role in amorphous InGaZnO (a-IGZO) thin film transistors (TFTs). In this paper, the surface potential distributions along the channel have been measured by using Kelvin probe force microscopy (KPFM) on operating a-IGZO TFTs, and sharp potential drops at the edges of source and drain were observed. The source and drain contact resistances can be extracted by dividing sharp potential drops with the corresponding drain to source current. It is found that the contact resistances could not be neglected compared with the whole channel resistances in the a-IGZO TFT, and the contact resistances decrease remarkably with increasing gate biased voltage. Our results suggest that the contact resistances can be controlled by tuning the gate biased voltage. Moreover, a transition from gradual channel approximation to space charge region was observed through the surface potential map directly when TFT operating from linear regime to saturation regime.

  18. Photovoltaic device

    DOEpatents

    Reese, Jason A; Keenihan, James R; Gaston, Ryan S; Kauffmann, Keith L; Langmaid, Joseph A; Lopez, Leonardo; Maak, Kevin D; Mills, Michael E; Ramesh, Narayan; Teli, Samar R

    2017-03-21

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

  19. Photovoltaic device

    DOEpatents

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-06-02

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

  20. Photovoltaic device

    DOEpatents

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-09-01

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device (10) with a multilayered photovoltaic cell assembly (100) and a body portion (200) joined at an interface region (410) and including an intermediate layer (500), at least one interconnecting structural member (1500), relieving feature (2500), unique component geometry, or any combination thereof.

  1. Testing of flexible InGaZnO-based thin-film transistors under mechanical strain

    NASA Astrophysics Data System (ADS)

    Münzenrieder, N. S.; Cherenack, K. H.; Tröster, G.

    2011-08-01

    Thin-film transistors (TFTs) fabricated on flexible plastic substrates are an integral part of future flexible large-area electronic devices like displays and smart textiles. Devices for such applications require stable electrical performance under electrical stress and also during applied mechanical stress induced by bending of the flexible substrate. Mechanical stress can be tensile or compressive strain depending on whether the TFT is located outside or inside of the bending plane. Especially the impact of compressive bending on TFT performance is hard to measure, because the device is covered with the substrate in this case. We present a method which allows us to continuously measure the electrical performance parameters of amorphous Indium-Gallium-Zinc Oxide (a-IGZO) based TFTs exposed to arbitrary compressive and tensile bending radii. To measure the influence of strain on a TFT it is attached and electrically connected to a flexible carrier foil, which afterwards is fastened to two plates in our bending tester. The bending radius can be adjusted by changing the distance between these plates. Thus it is possible to apply bending radii in the range between a totally flat substrate and ≈1 mm, corresponding to a strain of ≈3.5%. The tested bottom-gate TFTs are especially designed for use with our bending tester and fabricated on 50 μm thick flexible Kapton® E polyimide substrates. To show the different application areas of our bending method we characterized our TFTs while they are bent to different tensile and compressive bending radii. These measurements show that the field effect mobilities and threshold voltages of the tested a-IGZO TFTs are nearly, but not absolutely, stable under applied strain, compared to the initial values the mobilities shift by ≈3.5% in the tensile case and ≈-1.5% in the compressive one, at a bending radius of 8 mm. We also measured the influence of repeated bending (2500 cycles over ≈70 h), where a shift of the

  2. Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Du Ahn, Byung; Shin, Hyun Soo; Kim, Hyun Jae; Park, Jin-Seong; Jeong, Jae Kyeong

    2008-11-01

    We proposed a homojunctioned amorphous InGaZnO (a-IGZO) thin film transistor (TFT) and compared its performance to that of a conventional structured TFT. The source/drain regions were formed in the a-IGZO channel layer using Ar and H2 plasma treatments, respectively. Hydrogen itself was found to act as a carrier of donors with H2 plasma treatment, which had effects to a depth of 50 nm. Our TFT had a field-effect mobility of 7.27 cm2/V s, an on/off ratio of 1.2×107, a threshold voltage of 0.96 V, and a subthreshold swing of 0.49 V/decade.

  3. Microfluidic Device

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Zheng, Siyang (Inventor); Lin, Jeffrey Chun-Hui (Inventor); Kasdan, Harvey L. (Inventor)

    2017-01-01

    Described herein are particular embodiments relating to a microfluidic device that may be utilized for cell sensing, counting, and/or sorting. Particular aspects relate to a microfabricated device that is capable of differentiating single cell types from dense cell populations. One particular embodiment relates a device and methods of using the same for sensing, counting, and/or sorting leukocytes from whole, undiluted blood samples.

  4. Microfluidic Device

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Zheng, Siyang (Inventor); Lin, Jeffrey Chun-Hui (Inventor); Kasdan, Harvey (Inventor)

    2015-01-01

    Described herein are particular embodiments relating to a microfluidic device that may be utilized for cell sensing, counting, and/or sorting. Particular aspects relate to a microfabricated device that is capable of differentiating single cell types from dense cell populations. One particular embodiment relates a device and methods of using the same for sensing, counting, and/or sorting leukocytes from whole, undiluted blood samples.

  5. Microfluidic Device

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Zheng, Siyang (Inventor); Lin, Jeffrey Chun-Hui (Inventor); Kasdan, Harvey L. (Inventor)

    2016-01-01

    Described herein are particular embodiments relating to a microfluidic device that may be utilized for cell sensing, counting, and/or sorting. Particular aspects relate to a microfabricated device that is capable of differentiating single cell types from dense cell populations. One particular embodiment relates a device and methods of using the same for sensing, counting, and/or sorting leukocytes from whole, undiluted blood samples.

  6. Sealing device

    SciTech Connect

    Garcia-Crespo, Andres Jose

    2013-12-10

    A sealing device for sealing a gap between a dovetail of a bucket assembly and a rotor wheel is disclosed. The sealing device includes a cover plate configured to cover the gap and a retention member protruding from the cover plate and configured to engage the dovetail. The sealing device provides a seal against the gap when the bucket assemply is subjected to a centrifugal force.

  7. BRAKE DEVICE

    DOEpatents

    O'Donnell, T.J.

    1959-03-10

    A brake device is described for utilization in connection with a control rod. The device comprises a pair of parallelogram link mechanisms, a control rod moveable rectilinearly therebetween in opposite directions, and shoes resiliently supported by the mechanism for frictional engagement with the control rod.

  8. Josephson Devices

    NASA Astrophysics Data System (ADS)

    Barone, Antonio; Pagano, Sergio

    In this chapter we briefly review the main applications of Josephson effect together with the most successful devices realized. We will give an overview of the various devices, providing also some basic concepts of the underlying physical mechanisms involved, and the associated limit performances. Some considerations on the concrete possibilities of successful "market ready" implementation will also be given.

  9. Electrochromic devices

    DOEpatents

    Allemand, Pierre M.; Grimes, Randall F.; Ingle, Andrew R.; Cronin, John P.; Kennedy, Steve R.; Agrawal, Anoop; Boulton, Jonathan M.

    2001-01-01

    An electrochromic device is disclosed having a selective ion transport layer which separates an electrochemically active material from an electrolyte containing a redox active material. The devices are particularly useful as large area architectural and automotive glazings due to there reduced back reaction.

  10. Optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Sperling, Leslie H.; Murphy, Clarence J.; Rosen, Warren A.; Jain, Himanshu

    1990-07-01

    This invention relates to acrylic polymers and more specifically to polyacrylamides and polyacrylates such as poly(2-((N-2-methyl-5-nitrophenylamino) ethyl acrylate)) and poly((N-2-methyl-4-nitrophenyl)acrylamide). These acrylic polymers are particularly useful as nonlinear optical components in various electrical devices for processing optical signals including interferometors, optical switches, optical amplifiers, generators, computational devices and the like.

  11. Study on the Hydrogenated ZnO-Based Thin Film Transistors. Part 1

    DTIC Science & Technology

    2011-04-30

    zinc oxide (a-IGZO) thin film transistors ( TFTs ) was...Amorphous indium-gallium- zinc oxide thin - film transistors (a-IGZO TFTs ) have been investigated for switching devices in the active matrix liquid crystal...depletion-mode ZnO -based thin - film transistors ( TFTs ) were studied using two approaches. The first approach used elevated substrate

  12. PLASMA DEVICE

    DOEpatents

    Gow, J.D.; Wilcox, J.M.

    1961-12-26

    A device is designed for producing and confining highenergy plasma from which neutrons are generated in copious quantities. A rotating sheath of electrons is established in a radial electric field and axial magnetic field produced within the device. The electron sheath serves as a strong ionizing medium to gas introdueed thereto and also functions as an extremely effective heating mechanism to the resulting plasma. In addition, improved confinement of the plasma is obtained by ring magnetic mirror fields produced at the ends of the device. Such ring mirror fields are defined by the magnetic field lines at the ends of the device diverging radially outward from the axis of the device and thereafter converging at spatial annular surfaces disposed concentrically thereabout. (AFC)

  13. Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

    NASA Astrophysics Data System (ADS)

    Jeong, Jaewook; Kim, Joonwoo; Kim, Donghyun; Jeon, Heonsu; Jeong, Soon Moon; Hong, Yongtaek

    2016-08-01

    In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer.

  14. Temperature Dependence of Transistor Characteristics and Electronic Structure for Amorphous In-Ga-Zn-Oxide Thin Film Transistor

    NASA Astrophysics Data System (ADS)

    Godo, Hiromichi; Kawae, Daisuke; Yoshitomi, Shuhei; Sasaki, Toshinari; Ito, Shunichi; Ohara, Hiroki; Kishida, Hideyuki; Takahashi, Masahiro; Miyanaga, Akiharu; Yamazaki, Shunpei

    2010-03-01

    We fabricated an inverted-staggered amorphous In-Ga-Zn-oxide (a-IGZO) thin film transistor (TFT) and measured the temperature dependence of its characteristics. A threshold voltage (Vth) shift between 120 and 180 °C was as large as 4 V. In an analysis with two-dimensional (2D) numerical simulation, we reproduced the measured result by assuming two types of donor-like states as carrier generation sources. Furthermore, by ab initio molecular dynamics (MD) simulation, we determined the electronic structures of three types of a-IGZO structures, namely, “stoichiometric a-IGZO”, “oxygen deficiency”, and “hydrogen doping”.

  15. Effects of Oxygen Contents in the Active Channel Layer on Electrical Characteristics of IGZO-Based Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Chiu, C. J.; Chang, S. P.; Lu, C. Y.; Su, P. Y.; Chang, S. J.

    2011-12-01

    The authors report the fabrication of high performance a-IGZO thin film transistors (TFTs) with polymer gate dielectric prepared by spin-coating on a glass substrate. It was found that transmittance of the deposited polymer film was larger than 90% at 600 nm. It was also found that the a-IGZO TFT prepared with 0.14% oxygen partial pressure with annealing could provide us a higher mobility (i.e.,17.5 cm2/Vs) while maintaining good substrate swing and good Ion/Ioff.

  16. Device Performance

    SciTech Connect

    Not Available

    2006-06-01

    In the Device Performance group, within the National Center for Photovoltaic's Measurements and Characterization Division, we measure the performance of PV cells and modules with respect to standard reporting conditions--defined as a reference temperature (25 C), total irradiance (1000 Wm-2), and spectral irradiance distribution (IEC standard 60904-3). Typically, these are ''global'' reference conditions, but we can measure with respect to any reference set. To determine device performance, we conduct two general categories of measurements: spectral responsivity (SR) and current versus voltage (I-V). We usually perform these measurements using standard procedures, but we develop new procedures when required by new technologies. We also serve as an independent facility for verifying device performance for the entire PV community. We help the PV community solve its special measurement problems, giving advice on solar simulation, instrumentation for I-V measurements, reference cells, measurement procedures, and anomalous results. And we collaborate with researchers to analyze devices and materials.

  17. Device Demonstration

    DTIC Science & Technology

    2006-12-31

    effecting change in the electrical properties of the material. Due to the heating requirement in setting the state, stray radiation does not affect the...device as in traditional binary RAM, thus giving the device radiation-hard properties . Uniformity of the heater elements at a small size below 100 nm is...Molybdenum was chosen for the cathode tube material because it has a low sputtering coefficient, and it’s high temperature properties .. The tubes are

  18. Facile one-step synthesis of magnesium-doped ZnO nanoparticles: optical properties and their device applications

    NASA Astrophysics Data System (ADS)

    Oh, Ji-Young; Lim, Sang-Chul; Ahn, Seong Deok; Lee, Sang Seok; Cho, Kyoung-Ik; Bon Koo, Jae; Choi, Rino; Hasan, Musarrat

    2013-07-01

    In this study, magnesium-doped (Mg-doped) zinc oxide (ZnO) nanoparticles were successfully synthesized by a sonochemical process under mild conditions. The x-ray diffraction pattern indicated that the Mg-doped ZnO nanoparticles maintain a wurtzite structure without impurities. We observed a blue-shift of the bandgap of the Mg-doped ZnO nanoparticles as the Mg-doping ratio increased. We also fabricated thin-film transistor (TFT) devices with the doped-ZnO nanoparticles. Devices using Mg-doped ZnO nanoparticles as a channel layer showed insensibility to white-light irradiation compared with undoped ZnO TFTs.

  19. Investigation of the ferroelectric switching behavior of P(VDF-TrFE)-PMMA blended films for synaptic device applications

    NASA Astrophysics Data System (ADS)

    Kim, E. J.; Kim, K. A.; Yoon, S. M.

    2016-02-01

    Synaptic plasticity can be mimicked by electronic synaptic devices. By using ferroelectric thin films as gate insulator for thin-film transistors (TFT), channel conductance can be defined as the synaptic plasticity, and gradually modulated by the variations in amounts of aligned ferroelectric dipoles. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]-poly(methyl methacrylate) (PMMA) blended films are chosen and their switching kinetics are investigated by using the Kolmogorov-Avrami-Ishibashi model. The switching time for ferroelectric polarization is sensitively influenced by the amplitude of applied electric field and volumetric ratio of ferroelectric beta-phases in the P(VDF-TrFE)-PMMA films. The switching time of the P(VDF-TrFE) increases with decreasing the pulse amplitude and/or the ratio of ferroelectric beta-phases by incorporation of PMMA. The activation electric field is also found to increase as the increase in blended amount of PMMA. Synapse TFTs are fabricated using the P(VDF-TrFE)-PMMA as gate insulator and In-Ga-Zn-O active channels. The drain currents of the synapse TFTs gradually increased when the voltage pulse signals with given duration are repeatedly applied. This suggests that the synaptic weights can be modulated by the number of external pulse signals, and that the proposed synapse TFT can be applied for mimicking the operations of bio-synapses.

  20. PLASMA DEVICE

    DOEpatents

    Baker, W.R.; Brathenahl, A.; Furth, H.P.

    1962-04-10

    A device for producing a confined high temperature plasma is described. In the device the concave inner surface of an outer annular electrode is disposed concentrically about and facing the convex outer face of an inner annular electrode across which electrodes a high potential is applied to produce an electric field there between. Means is provided to create a magnetic field perpendicular to the electric field and a gas is supplied at reduced pressure in the area therebetween. Upon application of the high potential, the gas between the electrodes is ionized, heated, and under the influence of the electric and magnetic fields there is produced a rotating annular plasma disk. The ionized plasma has high dielectric constant properties. The device is useful as a fast discharge rate capacitor, in controlled thermonuclear research, and other high temperature gas applications. (AEC)

  1. Electrooptical Devices

    DTIC Science & Technology

    1977-03-31

    LEXINGTON MASSACHUSETTS ABSTRACT The current objectives of the electrooptical device program are: (1) to perform life tests on GalnAsP/lnP double...DH GalnAsP/lnP lasers, operating contin- uously at room temperature, have been placed on life test . The first three devices, fabricated from one...on life tests of DH GalnAsP/lnP lasers. The first three lasers to be put on life test have been in continuous operation at room tempera- ture in an

  2. Detection device

    DOEpatents

    Smith, Jay E.

    1984-01-01

    The present invention is directed to a detection device comprising: (1) an entrance chamber, (2) a central chamber, and (3) an exit chamber. The central chamber includes an ionizing gas, anode, and means for connecting the anode with an external power supply and pulse counter.

  3. Detection device

    DOEpatents

    Smith, J.E.

    1981-02-27

    The present invention is directed to a detection device comprising: (1) an entrance chamber; (2) a central chamber; and (3) an exit chamber. The central chamber includes an ionizing gas, anode, and means for connecting the anode with an external power supply and pulse counter.

  4. Electrochemical device

    DOEpatents

    Grimes, Patrick G.; Einstein, Harry; Bellows, Richard J.

    1988-01-12

    A tunnel protected electrochemical device features channels fluidically communicating between manifold, tunnels and cells. The channels are designed to provide the most efficient use of auxiliary power. The channels have a greater hydraulic pressure drop and electrical resistance than the manifold. This will provide a design with the optimum auxiliary energy requirements.

  5. Cleaning devices

    NASA Technical Reports Server (NTRS)

    Schneider, Horst W. (Inventor)

    1981-01-01

    Cleaning devices are described which include a vacuum cleaner nozzle with a sharp rim for directing incoming air down against the floor; a vacuum cleaner wherein electrostatically charged brushes that brush dirt off a floor, are electrically grounded to remove charges that could tend to hold dirt to the brushes; a vacuum cleaner head having slots that form a pair of counter-rotating vortices, and that includes an outlet that blows a stream of air at the floor region which lies between the vortices; a cleaning device that sweeps a group of brushes against the ground along a first direction, and then sweeps them along the same ground area but in a second direction angled from the first by an amount such as 90.degree., to sweep up particles lying in crevices extending along any direction; a device that gently cleans a surface to remove bacteria for analysis, including an inclined wall along which cleaning fluid flows onto the surface, a vacuum chamber for drawing in the cleaning fluid, and a dividing wall spaced slightly from the surface to separate the fluid source from the vacuum cleaner chamber; and a device for providing pulses of pressured air including a chamber to which pressured air is supplied, a ball that circulates around the chamber to repeatedly close an outlet, and an air source that directs air circumferentially to move the ball around the chamber.

  6. [Intrauterine devices].

    PubMed

    Delavest, P; Engelmann, P

    1980-12-11

    Medicated IUDs such as copper IUDs and progesterone-releasing IUDs represent a new development in this form of contraception. All IUDs act by causing an inflammatory reaction at the endometrial level. Techniques of insertion vary from one model to the other; insertion always requires an experienced practitioner, and postabortion or midmenstruation insertions are to be preferred. Pregnancy with IUD in situ is a rare occurrence; the IUD must then be immediately removed. Ectopic pregnancies are about 5-10% of all pregnancies with the device in situ. IUD complications are uterine perforation, mostly done at time of insertion, and pelvic infection which, if untreated, can cause infertility; this is the reason why an IUD is never recommended to a nullipara. Pain and bleeding are the most common side effects. When the strings of the device are not visible, translocation of the device inside the uterine cavity must be suspected. The choice of the wrong type of IUD or a bad insertion can cause spontaneous expulsion of the device. IUD wearers must be regularly seen by a doctor; there is no correlation between IUD use and cervical or endometrial carcinoma.

  7. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    PubMed Central

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-01-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows. PMID:27174791

  8. Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment

    NASA Astrophysics Data System (ADS)

    Kim, Joonwoo; Jeong, Soon Moon; Jeong, Jaewook

    2015-11-01

    We fabricated depletion type, transparent amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) and inverters with an Ar plasma treatment and analyzed their scaling characteristics with channel lengths ranging from 2 to 100 µm. The improvement of the field-effect mobility of a-IGZO TFTs is apparent only for short channel lengths. There is also an unexpected side effect of the Ar plasma treatment, which introduces back-channel interfacial states and induces a positive shift in the threshold voltage of a-IGZO TFTs. The resulting increase in the field-effect mobility and the positive shift in the threshold voltage of each TFT increase the differential gain up to 3 times and the positive shift in the transient point of the transparent inverters.

  9. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Direct Transfer Printing

    NASA Astrophysics Data System (ADS)

    Adachi, Susumu; Okamura, Shoichi

    2010-10-01

    This letter describes the fabrication of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) by direct transfer printing. An a-IGZO layer and a silicon dioxide (SiO2) layer were sequentially sputtered on a poly(dimethylsiloxane) (PDMS) stamp; the stamp was then pressed onto a glass substrate on which a gate metal had been previously deposited. Then, a-IGZO/SiO2 layers were successfully transferred by simply releasing the stamp from the substrate; a bottom-gate TFT was finally constructed. The measured current-voltage characteristics exhibited good field-effect mobility exceeding 10 cm2 V-1 s-1. The on/off current ratio and subthreshold slope were 4×105 and 0.86 V/decade, respectively.

  10. Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

    NASA Astrophysics Data System (ADS)

    Hanyu, Yuichiro; Domen, Kay; Nomura, Kenji; Hiramatsu, Hidenori; Kumomi, Hideya; Hosono, Hideo; Kamiya, Toshio

    2013-11-01

    We report an experimental evidence that some hydrogens passivate electron traps in an amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO). The a-IGZO thin-film transistors (TFTs) annealed at 300 °C exhibit good operation characteristics; while those annealed at ≥400 °C show deteriorated ones. Thermal desorption spectra (TDS) of H2O indicate that this threshold annealing temperature corresponds to depletion of H2O desorption from the a-IGZO layer. Hydrogen re-doping by wet oxygen annealing recovers the good TFT characteristic. The hydrogens responsible for this passivation have specific binding energies corresponding to the desorption temperatures of 300-430 °C. A plausible structural model is suggested.

  11. LOADING DEVICE

    DOEpatents

    Ohlinger, L.A.

    1958-10-01

    A device is presented for loading or charging bodies of fissionable material into a reactor. This device consists of a car, mounted on tracks, into which the fissionable materials may be placed at a remote area, transported to the reactor, and inserted without danger to the operating personnel. The car has mounted on it a heavily shielded magazine for holding a number of the radioactive bodies. The magazine is of a U-shaped configuration and is inclined to the horizontal plane, with a cap covering the elevated open end, and a remotely operated plunger at the lower, closed end. After the fissionable bodies are loaded in the magazine and transported to the reactor, the plunger inserts the body at the lower end of the magazine into the reactor, then is withdrawn, thereby allowing gravity to roll the remaining bodies into position for successive loading in a similar manner.

  12. Laser device

    DOEpatents

    Scott, Jill R.; Tremblay, Paul L.

    2008-08-19

    A laser device includes a virtual source configured to aim laser energy that originates from a true source. The virtual source has a vertical rotational axis during vertical motion of the virtual source and the vertical axis passes through an exit point from which the laser energy emanates independent of virtual source position. The emanating laser energy is collinear with an orientation line. The laser device includes a virtual source manipulation mechanism that positions the virtual source. The manipulation mechanism has a center of lateral pivot approximately coincident with a lateral index and a center of vertical pivot approximately coincident with a vertical index. The vertical index and lateral index intersect at an index origin. The virtual source and manipulation mechanism auto align the orientation line through the index origin during virtual source motion.

  13. Electrooptical Devices.

    DTIC Science & Technology

    1980-03-31

    Si N ’or Pl. The surface-related nature of the leakage currents was confirmed by testing the uncoated devices in several gaseous environments (O, NH ...later- tinre. Z-I.. Liau D. E. Mull .1. J. Ilsiebl J. N. Walpole T. A. Lind 711 G&InkA.P/ p I 643 6-C Fig. IV- t. Intensity distribution of an X-ray beam

  14. Closure device

    SciTech Connect

    Sable, D. E.

    1985-06-11

    A closure device connectible to a well head through which the polished rod of a rod string extends into a well tubing for operating pump means for moving well fluids to a surface flow conductor, the closure device having a tubular ram provided with a packing or plug for closing an annular passage between the polished rod and a tubular body connected to the well head above a lateral port of the tubular body, the tubular ram and the tubular body having thread means for moving the plug between an operative lower position wherein it closes the annular passage when the rod string is stationary and on inoperative upper position; seal means between the ram and the polished rod spaced above the plug; and a plurality of independent seal means between the ram and the tubular body operative when the plug is in its inoperative position. The plug of the closure device is especially adapted to operate under high temperature and pressure conditions of the well, as during steam injection operations when the rod string is stationary, to protect the seal means from high pressures and temperatures as well as any fluids which may be corrosive or otherwise deleterious to the substance of which the seal means are made.

  15. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.

    PubMed

    Park, Soyeon; Bang, Seokhwan; Lee, Seungjun; Park, Joohyun; Ko, Youngbin; Jeon, Hyeongtag

    2011-07-01

    In this study, the effects of different annealing conditions (air, O2, N2, vacuum) on the chemical and electrical characteristics of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFT) were investigated. The contact resistance and interface properties between the IGZO film and the gate dielectric improved after an annealing treatment. However, the chemical bonds in the IGZO bulk changed under various annealing atmospheres, which, in turn, altered the characteristics of the TFTs. The TFTs annealed in vacuum and N2 ambients exhibited undesired switching properties due to the high carrier concentration (>10(17) cm(-3)) of the IGZO active layer. In contrast, the IGZO TFTs annealed in air and oxygen ambients displayed clear transfer characteristics due to an adequately adjusted carrier concentration in the operating range of the TFT. Such an optimal carrier concentration arose through the stabilization of unstable chemical bonds in the IGZO film. With regard to device performance, the TFTs annealed in O2 and air exhibited saturation mobility values of 8.29 and 7.54 cm2/Vs, on-off ratios of 7.34 x 10(8) and 3.95 x 10(8), and subthreshold swing (SS) values of 0.23 and 0.19 V/decade, respectively. Therefore, proper annealing ambients contributed to internal modifications in the IGZO structure and led to an enhancement in the oxidation state of the metal. As a result, defects such as oxygen vacancies were eliminated. Oxygen annealing is thus effective for controlling the carrier concentration of the active layer, decreasing electron traps, and enhancing TFT performance.

  16. Medical Device Safety

    MedlinePlus

    ... Home Medical Devices Medical Device Safety Medical Device Safety Share Tweet Linkedin Pin it More sharing options ... 17 More Medical Device Recalls Recent Medical Device Safety Communications FDA analyses and recommendations for patients and ...

  17. External incontinence devices

    MedlinePlus

    ... devices; Urinary incontinence - devices; Fecal incontinence - devices; Stool incontinence - devices ... of these different products are listed below. FECAL INCONTINENCE DEVICES There are many types of products for managing long-term diarrhea or fecal incontinence . ...

  18. Electrochromic device

    SciTech Connect

    Schwendemanm, Irina G; Polcyn, Adam D; Finley, James J; Boykin, Cheri M; Knowles, Julianna M

    2011-03-15

    An electrochromic device includes a first substrate spaced from a second substrate. A first conductive member is formed over at least a portion of the first substrate. A first electrochromic material is formed over at least a portion of the first conductive member. The first electrochromic material includes an organic material. A second conductive member is formed over at least a portion of the second substrate. A second electrochromic material is formed over at least a portion of the second conductive member. The second electrochromic material includes an inorganic material. An ionic liquid is positioned between the first electrochromic material and the second electrochromic material.

  19. Device Connectivity

    PubMed Central

    Walsh, John; Roberts, Ruth; Morris, Richard

    2015-01-01

    Patients with diabetes have to take numerous factors/data into their therapeutic decisions in daily life. Connecting the devices they are using by feeding the data generated into a database/app is supposed to help patients to optimize their glycemic control. As this is not established in practice, the different roadblocks have to be discussed to open the road. That large telecommunication companies are now entering this market might be a big help in pushing this forward. Smartphones offer an ideal platform for connectivity solutions. PMID:25614015

  20. Electrooptical Devices.

    DTIC Science & Technology

    1984-09-30

    Table 1-1 10 II-5 Calculated Ij as a Function of the Cap p-Doping 12 III-1 L-I Characteristics of the Five Mass-Transported BH Lasers with Different...343, a = 5.0 /im, W = 1.5 nmy and b = 2.0 pm 9 vni ELECTROOPTICAL DEVICES I. NEW DEVELOPMENTS IN MASS-TRANSPORTED GalnAsP/InP BURIED...HETEROSTRUCTURE LASERS As a potentially very important class of sources in fiber optical communication and inte- grated optics, GalnAsP/InP buried

  1. Electrospray device

    NASA Technical Reports Server (NTRS)

    Demmons, Nathaniel (Inventor); Martin, Roy (Inventor); Hruby, Vladimir (Inventor); Roy, Thomas (Inventor); Spence, Douglas (Inventor); Ehrbar, Eric (Inventor); Zwahlen, Jurg (Inventor)

    2011-01-01

    An electrospray device includes an electrospray emitter adapted to receive electrospray fluid; an extractor plate spaced from the electrospray emitter and having at least one aperture; and a power supply for applying a first voltage between the extractor plate and emitter for generating at least one Taylor cone emission through the aperture to create an electrospray plume from the electrospray fluid, the extractor plate as well as accelerator and shaping plates may include a porous, conductive medium for transporting and storing excess, accumulated electrospray fluid away from the aperture.

  2. Diversionary device

    DOEpatents

    Grubelich, Mark C.

    2001-01-01

    A diversionary device has a housing having at least one opening and containing a non-explosive propellant and a quantity of fine powder packed within the housing, with the powder being located between the propellant and the opening. When the propellant is activated, it has sufficient energy to propel the powder through the opening to produce a cloud of powder outside the housing. An igniter is also provided for igniting the cloud of powder to create a diversionary flash and bang, but at a low enough pressure to avoid injuring nearby people.

  3. OLED devices

    SciTech Connect

    Sapochak, Linda Susan; Burrows, Paul Edward; Bimalchandra, Asanga

    2011-02-22

    An OLED device having an emission layer formed of an ambipolar phosphine oxide host material and a dopant, a hole transport layer in electrical communication with an anode, an electron transport layer in communication with a cathode, wherein the HOMO energy of the hole transport layer is substantially the same as the HOMO energy of the ambipolar host in the emission layer, and the LUMO energy of the electron transport layer is substantially the same as the LUMO energy of the ambipolar host in the emission layer.

  4. Cooling device

    SciTech Connect

    Teske, L.

    1984-02-21

    A cooling device is claimed for coal dust comprising a housing, a motor-driven conveyor system therein to transport the coal dust over coolable trays in the housing and conveyor-wheel arms of spiral curvature for moving the coal dust from one or more inlets to one or more outlets via a series of communicating passages in the trays over which the conveyor-wheel arms pass under actuation of a hydraulic motor mounted above the housing and driving a vertical shaft, to which the conveyor-wheel arms are attached, extending centrally downwardly through the housing.

  5. Electroexplosive device

    NASA Technical Reports Server (NTRS)

    Menichelli, V. J. (Inventor)

    1978-01-01

    An electroexplosive device is presented which employs a header having contact pins hermetically sealed with glass passing through from a connector end of the header to a cavity filled with a shunt layer of a new nonlinear resistive composition and a heat-sink layer of a new dielectric composition having good thermal conductivity and capacity. The nonlinear resistive layer and the heat-sink layer are prepared from materials by mixing with a low temperature polymerizing resin. The resin is dissolved in a suitable solvent and later evaporated. The resultant solid composite is ground into a powder, press formed into the header and cured (polymerized) at about 250 to 300 F.

  6. Amorphous indium-gallium-zinc-oxide thin-film transistors using organic-inorganic hybrid films deposited by low-temperature plasma-enhanced chemical vapor deposition for all dielectric layers

    NASA Astrophysics Data System (ADS)

    Hsu, Chao-Jui; Chang, Ching-Hsiang; Chang, Kuei-Ming; Wu, Chung-Chih

    2017-01-01

    We investigated the deposition of high-performance organic-inorganic hybrid dielectric films by low-temperature (close to room temperature) inductively coupled plasma chemical vapor deposition (ICP-CVD) with hexamethyldisiloxane (HMDSO)/O2 precursor gas. The hybrid films exhibited low leakage currents and high breakdown fields, suitable for thin-film transistor (TFT) applications. They were successfully integrated into the gate insulator, the etch-stop layer, and the passivation layer for bottom-gate staggered amorphous In-Ga-Zn-O (a-IGZO) TFTs having the etch-stop configuration. With the double-active-layer configuration having a buffer a-IGZO back-channel layer grown in oxygen-rich atmosphere for better immunity against plasma damage, the etch-stop-type bottom-gate staggered a-IGZO TFTs with good TFT characteristics were successfully demonstrated. The TFTs showed good field-effect mobility (μFE), threshold voltage (V th), subthreshold swing (SS), and on/off ratio (I on/off) of 7.5 cm2 V-1 s-1, 2.38 V, 0.38 V/decade, and 2.2 × 108, respectively, manifesting their usefulness for a-IGZO TFTs.

  7. Conduction mechanism in amorphous InGaZnO thin film transistors

    NASA Astrophysics Data System (ADS)

    Bhoolokam, Ajay; Nag, Manoj; Steudel, Soeren; Genoe, Jan; Gelinck, Gerwin; Kadashchuk, Andrey; Groeseneken, Guido; Heremans, Paul

    2016-01-01

    We validate a model which is a combination of multiple trapping and release and percolation model for describing the conduction mechanism in amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT). We show that using just multiple trapping and release or percolation model is insufficient to explain TFT behavior as a function of temperature. We also show the intrinsic mobility is dependent on temperature due to scattering by ionic impurities or lattice. In solving the Poisson equation to find the surface potential and back potential as a function of gate voltage, we explicitly allow for the back surface to be floating, as is the case for a-IGZO transistors. The parameters for gap states, percolation barriers and intrinsic mobility at room temperature that we extract with this comprehensive model are in good agreement with those extracted in literature with partially-complete models.

  8. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

    NASA Astrophysics Data System (ADS)

    Kim, Minkyu; Jeong, Jong Han; Lee, Hun Jung; Ahn, Tae Kyung; Shin, Hyun Soo; Park, Jin-Seong; Jeong, Jae Kyeong; Mo, Yeon-Gon; Kim, Hye Dong

    2007-05-01

    The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching. To prevent plasma damage to the active channel, a 100-nm-thick SiOx layer deposited by plasma enhanced chemical vapor deposition was adopted as an etch stopper structure. The a-IGZO TFT (W /L=10μm/50μm) fabricated on glass exhibited a high field-effect mobility of 35.8cm2/Vs, a subthreshold gate swing value of 0.59V/decade, a thrseshold voltage of 5.9V, and an Ion/off ratio of 4.9×106, which is acceptable for use as the switching transistor of an active-matrix TFT backplane.

  9. CLOSURE DEVICE

    DOEpatents

    Linzell, S.M.; Dorcy, D.J.

    1958-08-26

    A quick opening type of stuffing box employing two banks of rotatable shoes, each of which has a caraming action that forces a neoprene sealing surface against a pipe or rod where it passes through a wall is presented. A ring having a handle or wrench attached is placed eccentric to and between the two banks of shoes. Head bolts from the shoes fit into slots in this ring, which are so arranged that when the ring is rotated a quarter turn in one direction the shoes are thrust inwardly to cramp the neopnrene about the pipe, malting a tight seal. Moving the ring in the reverse direction moves the shoes outwardly and frees the pipe which then may be readily removed from the stuffing box. This device has particular application as a closure for the end of a coolant tube of a neutronic reactor.

  10. Optoelectronic device

    DOEpatents

    Bonekamp, Jeffrey E.; Boven, Michelle L.; Gaston, Ryan S.

    2014-09-09

    The invention is an optoelectronic device comprising an active portion which converts light to electricity or converts electricity to light, the active portion having a front side for the transmittal of the light and a back side opposite from the front side, at least two electrical leads to the active portion to convey electricity to or from the active portion, an enclosure surrounding the active portion and through which the at least two electrical leads pass wherein the hermetically sealed enclosure comprises at the front side of the active portion a barrier material which allows for transmittal of light, one or more getter materials disposed so as to not impede the transmission of light to or from the active portion, and a contiguous gap pathway to the getter material which pathway is disposed between the active portion and the barrier material.

  11. PLASMA DEVICE

    DOEpatents

    Baker, W.R.

    1961-08-22

    A device is described for establishing and maintaining a high-energy, rotational plasma for use as a fast discharge capacitor. A disc-shaped, current- conducting plasma is formed in an axinl magnetic field and a crossed electric field, thereby creating rotational kinetic enengy in the plasma. Such energy stored in the rotation of the plasma disc is substantial and is convertible tc electrical energy by generator action in an output line electrically coupled to the plasma volume. Means are then provided for discharging the electrical energy into an external circuit coupled to the output line to produce a very large pulse having an extremely rapid rise time in the waveform thereof. (AE C)

  12. Electrophoresis device

    NASA Technical Reports Server (NTRS)

    Rhodes, P. H.; Snyder, R. S. (Inventor)

    1982-01-01

    A device for separating cellular particles of a sample substance into fractionated streams of different cellular species includes a casing having a distribution chamber, a separation chamber, and a collection chamber. The electrode chambers are separated from the separation chamber interior by means of passages such that flow variations and membrane variations around the slotted portion of the electrode chamber do not enduce flow perturbations into the laminar buffer curtain flowing in the separation chamber. The cellular particles of the sample are separated under the influence of the electrical field and the separation chamber into streams of different cellular species. The streams of separated cells enter a partition array in the collection chamber where they are fractionated and collected.

  13. Correlation of trap states with negative bias thermal illumination stress stabilities in amorphous In-Ga-Zn-O thin-film transistors studied by photoinduced transient spectroscopy

    NASA Astrophysics Data System (ADS)

    Hayashi, Kazushi; Ochi, Mototaka; Hino, Aya; Tao, Hiroaki; Goto, Hiroshi; Kugimiya, Toshihiro

    2017-03-01

    Negative bias thermal illumination stress (NBTIS) stabilities in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) were studied by photoinduced transient spectroscopy (PITS). The degradation of TFT performance correlated with trap states in the channel region of a-IGZO TFTs with an etch stop layer (ESL). A prominent peak at approximately 100 K was observed in a-IGZO formed under a partial pressure (p/p) of 4% O2. With increasing O2 p/p, an apparent shoulder of around 230 K appeared in PITS spectra. A higher flow rate of SiH4/N2O for the ESL deposition induced trap states associated with the 230 K peak. The peak at approximately 100 K could originate from the depletion of Zn by preannealing, while the peak at approximately 230 K should be attributed to the oxygen-deficient and/or Zn-rich defects due to the formation of OH in a-IGZO. The trap states in a-IGZO TFTs gave rise to degradation in terms of NBTIS. The threshold voltage shift (ΔV th) was 2.5 V, but it increased with the O2 p/p as well as the flow rate of SiH4/N2O for ESL deposition. The time dependence of ΔV th suggested that hydrogen from the ESL and/or in the a-IGZO thin films was incorporated and modified the trap states in the channel region of the a-IGZO TFTs.

  14. Integrated device architectures for electrochromic devices

    DOEpatents

    Frey, Jonathan Mack; Berland, Brian Spencer

    2015-04-21

    This disclosure describes systems and methods for creating monolithically integrated electrochromic devices which may be a flexible electrochromic device. Monolithic integration of thin film electrochromic devices may involve the electrical interconnection of multiple individual electrochromic devices through the creation of specific structures such as conductive pathway or insulating isolation trenches.

  15. Laser device

    DOEpatents

    Scott, Jill R.; Tremblay, Paul L.

    2007-07-10

    A laser device includes a target position, an optical component separated a distance J from the target position, and a laser energy source separated a distance H from the optical component, distance H being greater than distance J. A laser source manipulation mechanism exhibits a mechanical resolution of positioning the laser source. The mechanical resolution is less than a spatial resolution of laser energy at the target position as directed through the optical component. A vertical and a lateral index that intersect at an origin can be defined for the optical component. The manipulation mechanism can auto align laser aim through the origin during laser source motion. The laser source manipulation mechanism can include a mechanical index. The mechanical index can include a pivot point for laser source lateral motion and a reference point for laser source vertical motion. The target position can be located within an adverse environment including at least one of a high magnetic field, a vacuum system, a high pressure system, and a hazardous zone. The laser source and an electro-mechanical part of the manipulation mechanism can be located outside the adverse environment. The manipulation mechanism can include a Peaucellier linkage.

  16. Laser device

    DOEpatents

    Scott, Jill R.; Tremblay, Paul L.

    2004-11-23

    A laser device includes a target position, an optical component separated a distance J from the target position, and a laser energy source separated a distance H from the optical component, distance H being greater than distance J. A laser source manipulation mechanism exhibits a mechanical resolution of positioning the laser source. The mechanical resolution is less than a spatial resolution of laser energy at the target position as directed through the optical component. A vertical and a lateral index that intersect at an origin can be defined for the optical component. The manipulation mechanism can auto align laser aim through the origin during laser source motion. The laser source manipulation mechanism can include a mechanical index. The mechanical index can include a pivot point for laser source lateral motion and a reference point for laser source vertical motion. The target position can be located within an adverse environment including at least one of a high magnetic field, a vacuum system, a high pressure system, and a hazardous zone. The laser source and an electro-mechanical part of the manipulation mechanism can be located outside the adverse environment. The manipulation mechanism can include a Peaucellier linkage.

  17. Medical devices: US medical device regulation.

    PubMed

    Jarow, Jonathan P; Baxley, John H

    2015-03-01

    Medical devices are regulated by the US Food and Drug Administration (FDA) within the Center for Devices and Radiological Health. Center for Devices and Radiological Health is responsible for protecting and promoting the public health by ensuring the safety, effectiveness, and quality of medical devices, ensuring the safety of radiation-emitting products, fostering innovation, and providing the public with accurate, science-based information about the products we oversee, throughout the total product life cycle. The FDA was granted the authority to regulate the manufacturing and marketing of medical devices in 1976. It does not regulate the practice of medicine. Devices are classified based on complexity and level of risk, and "pre-1976" devices were allowed to remain on the market after being classified without FDA review. Post-1976 devices of lower complexity and risk that are substantially equivalent to a marketed "predicate" device may be cleared through the 510(k) premarket notification process. Clinical data are typically not needed for 510(k) clearance. In contrast, higher-risk devices typically require premarket approval. Premarket approval applications must contain data demonstrating reasonable assurance of safety and efficacy, and this information typically includes clinical data. For novel devices that are not high risk, the de novo process allows FDA to simultaneously review and classify new devices. Devices that are not legally marketed are permitted to be used for clinical investigation purposes in the United States under the Investigational Device Exemptions regulation.

  18. Connector device for building integrated photovoltaic device

    DOEpatents

    Keenihan, James R.; Langmaid, Joe A.; Eurich, Gerald K.; Lesniak, Michael J.; Mazor, Michael H.; Cleerman, Robert J.; Gaston, Ryan S.

    2015-11-10

    The present invention is premised upon a connector device and method that can more easily electrically connect a plurality of PV devices or photovoltaic system components and/or locate these devices/components upon a building structure. It also may optionally provide some additional sub-components (e.g. at least one bypass diode and/or an indicator means) and may enhance the serviceability of the device.

  19. Connector device for building integrated photovoltaic device

    DOEpatents

    Keenihan, James R.; Langmaid, Joseph A.; Eurich, Gerald K.; Lesniak, Michael J.; Mazor, Michael H.; Cleereman, Robert J.; Gaston, Ryan S.

    2014-06-03

    The present invention is premised upon a connector device and method that can more easily electrically connect a plurality of PV devices or photovoltaic system components and/or locate these devices/components upon a building structure. It also may optionally provide some additional sub-components (e.g. at least one bypass diode and/or an indicator means) and may enhance the serviceability of the device.

  20. Medical Device Safety

    MedlinePlus

    A medical device is any product used to diagnose, cure, or treat a condition, or to prevent disease. They range ... may need one in a hospital. To use medical devices safely Know how your device works. Keep instructions ...

  1. Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C

    NASA Astrophysics Data System (ADS)

    Yeob Park, Se; Hwan Ji, Kwang; Yoon Jung, Hong; Kim, Ji-In; Choi, Rino; Seok Son, Kyoung; Kwan Ryu, Myung; Lee, Sangyoon; Kyeong Jeong, Jae

    2012-04-01

    This study examined the effect of oxygen (O2) high pressure annealing (HPA) on tin-doped indium oxide (ITO) thin film transistors (TFTs). The HPA-treated TFT at 150 °C exhibited a high saturation mobility (μSAT), low subthreshold gate swing (SS), threshold voltage, and Ion/off of 25.8 cm2/Vs, 0.14 V/decade, 0.6 V, and 2 × 108, respectively. In contrast, the ambient-annealed device suffered from a lower μSAT and high SS value of 5.2 cm2/Vs and 0.58 V/decade, respectively. This improvement can be attributed to the decreased concentration of oxygen vacancy defects in the ITO channel layer during the effective O2 HPA treatment, which also resulted in smaller hysteresis and less degradation of the drain current under positive bias stress conditions.

  2. CONTROL LIMITER DEVICE

    DOEpatents

    DeShong, J.A.

    1960-03-01

    A control-limiting device for monltoring a control system is described. The system comprises a conditionsensing device, a condition-varying device exerting a control over the condition, and a control means to actuate the condition-varying device. A control-limiting device integrates the total movement or other change of the condition-varying device over any interval of time during a continuum of overlapping periods of time, and if the tothl movement or change of the condition-varying device exceeds a preset value, the control- limiting device will switch the control of the operated apparatus from automatic to manual control.

  3. Electrical and structural characterization of IZO (indium oxide-zinc oxide) thin films for device applications

    NASA Astrophysics Data System (ADS)

    Yaglioglu, Burag

    Materials for oxide-based transparent electronics have been recently reported in the literature. These materials include various amorphous and crystalline compounds based on multi-component oxides and many of them offer useful combinations of transparency, controllable carrier concentrations, and reasonable n-carrier mobility. In this thesis, the properties of amorphous and crystalline In2O3-10wt%ZnO, IZO, thin films were investigated for their potential use in oxide electronics. The room temperature deposition of this material using DC magnetron sputtering results in the formation of amorphous films. Annealing amorphous IZO films at 500°C in air produces a previously unknown crystalline compound. Using electron diffraction experiments, it is reported that the crystal structure of this compound is based on the high-pressure rhombohedral phase of In2O3. Electrical properties of different phases of IZO were explored and it was concluded that amorphous films offer most promising characteristics for device applications. Therefore, thin film transistors (TFT) were fabricated based on amorphous IZO films where both the channel and metallization layers were deposited from the same target. The carrier densities in the channel and source-drain layers were adjusted by changing the oxygen content in the sputter chamber during deposition. The resulting transistors operate as depletion mode n-channel field effect devices with high saturation mobilities.

  4. Toward Active-Matrix Lab-On-A-Chip: Programmable Electrofluidic control Enaled by Arrayed Oxide Thin Film Transistors

    SciTech Connect

    Noh, Joo Hyon; Noh, Jiyong; Kreit, Eric; Heikenfeld, Jason; Rack, Philip D

    2012-01-01

    Agile micro- and nano-fluidic control is critical to numerous life science and chemical science synthesis as well as kinetic and thermodynamic studies. To this end, we have demonstrated the use of thin film transistor arrays as an active matrix addressing method to control an electrofluidic array. Because the active matrix method minimizes the number of control lines necessary (m + n lines for the m x n element array), the active matrix addressing method integrated with an electrofluidic platform can be a significant breakthrough for complex electrofluidic arrays (increased size or resolution) with enhanced function, agility and programmability. An amorphous indium gallium zinc oxide (a-IGZO) semiconductor active layer is used because of its high mobility of 1-15 cm{sup 2} V{sup -1} s{sup -1}, low-temperature processing and transparency for potential spectroscopy and imaging. Several electrofluidic functionalities are demonstrated using a simple 2 x 5 electrode array connected to a 2 x 5 IGZO thin film transistor array with the semiconductor channel width of 50 {mu}m and mobility of 6.3 cm{sup 2} V{sup -1} s{sup -1}. Additionally, using the TFT device characteristics, active matrix addressing schemes are discussed as the geometry of the electrode array can be tailored to act as a storage capacitor element. Finally, requisite material and device parameters are discussed in context with a VGA scale active matrix addressed electrofluidic platform.

  5. Toward active-matrix lab-on-a-chip: programmable electrofluidic control enabled by arrayed oxide thin film transistors.

    PubMed

    Noh, Joo Hyon; Noh, Jiyong; Kreit, Eric; Heikenfeld, Jason; Rack, Philip D

    2012-01-21

    Agile micro- and nano-fluidic control is critical to numerous life science and chemical science synthesis as well as kinetic and thermodynamic studies. To this end, we have demonstrated the use of thin film transistor arrays as an active matrix addressing method to control an electrofluidic array. Because the active matrix method minimizes the number of control lines necessary (m + n lines for the m×n element array), the active matrix addressing method integrated with an electrofluidic platform can be a significant breakthrough for complex electrofluidic arrays (increased size or resolution) with enhanced function, agility and programmability. An amorphous indium gallium zinc oxide (a-IGZO) semiconductor active layer is used because of its high mobility of 1-15 cm(2) V(-1) s(-1), low-temperature processing and transparency for potential spectroscopy and imaging. Several electrofluidic functionalities are demonstrated using a simple 2 × 5 electrode array connected to a 2 × 5 IGZO thin film transistor array with the semiconductor channel width of 50 μm and mobility of 6.3 cm(2) V(-1) s(-1). Additionally, using the TFT device characteristics, active matrix addressing schemes are discussed as the geometry of the electrode array can be tailored to act as a storage capacitor element. Finally, requisite material and device parameters are discussed in context with a VGA scale active matrix addressed electrofluidic platform.

  6. Implantable CMOS Biomedical Devices

    PubMed Central

    Ohta, Jun; Tokuda, Takashi; Sasagawa, Kiyotaka; Noda, Toshihiko

    2009-01-01

    The results of recent research on our implantable CMOS biomedical devices are reviewed. Topics include retinal prosthesis devices and deep-brain implantation devices for small animals. Fundamental device structures and characteristics as well as in vivo experiments are presented. PMID:22291554

  7. Liquid Crystal Devices.

    ERIC Educational Resources Information Center

    Bradshaw, Madeline J.

    1983-01-01

    The nature of liquid crystals and several important liquid crystal devices are described. Ideas for practical experiments to illustrate the properties of liquid crystals and their operation in devices are also described. (Author/JN)

  8. Sealed container sampling device

    NASA Technical Reports Server (NTRS)

    Hennigan, T. J.

    1969-01-01

    Sampling device, by means of a tapered needle, pierces a sealed container while maintaining the seal and either evacuates or pressurizes the container. This device has many applications in the chemical, preservative and battery-manufacturing industries.

  9. Pulse flux measuring device

    DOEpatents

    Riggan, William C.

    1985-01-01

    A device for measuring particle flux comprises first and second photodiode detectors for receiving flux from a source and first and second outputs for producing first and second signals representing the flux incident to the detectors. The device is capable of reducing the first output signal by a portion of the second output signal, thereby enhancing the accuracy of the device. Devices in accordance with the invention may measure distinct components of flux from a single source or fluxes from several sources.

  10. GAS DISCHARGE DEVICES

    DOEpatents

    Arrol, W.J.; Jefferson, S.

    1957-08-27

    The construction of gas discharge devices where the object is to provide a gas discharge device having a high dark current and stabilized striking voltage is described. The inventors have discovered that the introduction of tritium gas into a discharge device with a subsequent electrical discharge in the device will deposit tritium on the inside of the chamber. The tritium acts to emit beta rays amd is an effective and non-hazardous way of improving the abovementioned discharge tube characteristics

  11. Devices for continence.

    PubMed

    Smith, D A

    1994-09-01

    Ameliorating the acute and chronic forms of incontinence is usually possible. When the functional status of the patient prohibits toileting, then devices are often necessary. The practicing nurse must make decisions on what devices are appropriate and how to teach clients to use them. Often, knowing the device exists is a start in the nurse's ability to eliminate functional incontinence. This article focuses on devices that collect urine, inhibit incontinence, and aid staff and clients to use the toilet.

  12. Organic photosensitive devices

    DOEpatents

    Rand, Barry P; Forrest, Stephen R

    2013-11-26

    The present invention generally relates to organic photosensitive optoelectronic devices. More specifically, it is directed to organic photosensitive optoelectronic devices having a photoactive organic region containing encapsulated nanoparticles that exhibit plasmon resonances. An enhancement of the incident optical field is achieved via surface plasmon polariton resonances. This enhancement increases the absorption of incident light, leading to a more efficient device.

  13. Articulating feedstock delivery device

    SciTech Connect

    Jordan, Kevin

    2013-11-05

    A fully articulable feedstock delivery device that is designed to operate at pressure and temperature extremes. The device incorporates an articulating ball assembly which allows for more accurate delivery of the feedstock to a target location. The device is suitable for a variety of applications including, but not limited to, delivery of feedstock to a high-pressure reaction chamber or process zone.

  14. Photovoltaic device and method

    DOEpatents

    Cleereman, Robert J; Lesniak, Michael J; Keenihan, James R; Langmaid, Joe A; Gaston, Ryan; Eurich, Gerald K; Boven, Michelle L

    2015-01-27

    The present invention is premised upon an improved photovoltaic device ("PVD") and method of use, more particularly to an improved photovoltaic device with an integral locator and electrical terminal mechanism for transferring current to or from the improved photovoltaic device and the use as a system.

  15. Amorphous silicon photovoltaic devices

    DOEpatents

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  16. Photovoltaic device and method

    DOEpatents

    Cleereman, Robert; Lesniak, Michael J.; Keenihan, James R.; Langmaid, Joe A.; Gaston, Ryan; Eurich, Gerald K.; Boven, Michelle L.

    2015-11-24

    The present invention is premised upon an improved photovoltaic device ("PVD") and method of use, more particularly to an improved photovoltaic device with an integral locator and electrical terminal mechanism for transferring current to or from the improved photovoltaic device and the use as a system.

  17. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness

    PubMed Central

    Kim, Ye Kyun; Ahn, Cheol Hyoun; Yun, Myeong Gu; Cho, Sung Woon; Kang, Won Jun; Cho, Hyung Koun

    2016-01-01

    In this paper, a simple and controllable “wet pulse annealing” technique for the fabrication of flexible amorphous InGaZnO thin film transistors (a-IGZO TFTs) processed at low temperature (150 °C) by using scalable vacuum deposition is proposed. This method entailed the quick injection of water vapor for 0.1 s and purge treatment in dry ambient in one cycle; the supply content of water vapor was simply controlled by the number of pulse repetitions. The electrical transport characteristics revealed a remarkable performance of the a-IGZO TFTs prepared at the maximum process temperature of 150 °C (field-effect mobility of 13.3 cm2 V−1 s−1; Ion/Ioff ratio ≈ 108; reduced I-V hysteresis), comparable to that of a-IGZO TFTs annealed at 350 °C in dry ambient. Upon analysis of the angle-resolved x-ray photoelectron spectroscopy, the good performance was attributed to the effective suppression of the formation of hydroxide and oxygen-related defects. Finally, by using the wet pulse annealing process, we fabricated, on a plastic substrate, an ultrathin flexible a-IGZO TFT with good electrical and bending performances. PMID:27198067

  18. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness

    NASA Astrophysics Data System (ADS)

    Kim, Ye Kyun; Ahn, Cheol Hyoun; Yun, Myeong Gu; Cho, Sung Woon; Kang, Won Jun; Cho, Hyung Koun

    2016-05-01

    In this paper, a simple and controllable “wet pulse annealing” technique for the fabrication of flexible amorphous InGaZnO thin film transistors (a-IGZO TFTs) processed at low temperature (150 °C) by using scalable vacuum deposition is proposed. This method entailed the quick injection of water vapor for 0.1 s and purge treatment in dry ambient in one cycle; the supply content of water vapor was simply controlled by the number of pulse repetitions. The electrical transport characteristics revealed a remarkable performance of the a-IGZO TFTs prepared at the maximum process temperature of 150 °C (field-effect mobility of 13.3 cm2 V‑1 s‑1 Ion/Ioff ratio ≈ 108 reduced I-V hysteresis), comparable to that of a-IGZO TFTs annealed at 350 °C in dry ambient. Upon analysis of the angle-resolved x-ray photoelectron spectroscopy, the good performance was attributed to the effective suppression of the formation of hydroxide and oxygen-related defects. Finally, by using the wet pulse annealing process, we fabricated, on a plastic substrate, an ultrathin flexible a-IGZO TFT with good electrical and bending performances.

  19. Active cleaning technique device

    NASA Technical Reports Server (NTRS)

    Shannon, R. L.; Gillette, R. B.

    1973-01-01

    The objective of this program was to develop a laboratory demonstration model of an active cleaning technique (ACT) device. The principle of this device is based primarily on the technique for removing contaminants from optical surfaces. This active cleaning technique involves exposing contaminated surfaces to a plasma containing atomic oxygen or combinations of other reactive gases. The ACT device laboratory demonstration model incorporates, in addition to plasma cleaning, the means to operate the device as an ion source for sputtering experiments. The overall ACT device includes a plasma generation tube, an ion accelerator, a gas supply system, a RF power supply and a high voltage dc power supply.

  20. Biomechanics of Interspinous Devices

    PubMed Central

    Parchi, Paolo D.; Evangelisti, Gisberto; Vertuccio, Antonella; Piolanti, Nicola; Andreani, Lorenzo; Cervi, Valentina; Giannetti, Christian; Calvosa, Giuseppe; Lisanti, Michele

    2014-01-01

    A number of interspinous devices (ISD) have been introduced in the lumbar spine implant market. Unfortunately, the use of these devices often is not associated with real comprehension of their biomechanical role. The aim of this paper is to review the biomechanical studies about interspinous devices available in the literature to allow the reader a better comprehension of the effects of these devices on the treated segment and on the adjacent segments of the spine. For this reason, our analysis will be limited to the interspinous devices that have biomechanical studies published in the literature. PMID:25114923

  1. Portable data collection device

    DOEpatents

    French, Patrick D.

    1996-01-01

    The present invention provides a portable data collection device that has a variety of sensors that are interchangeable with a variety of input ports in the device. The various sensors include a data identification feature that provides information to the device regarding the type of physical data produced by each sensor and therefore the type of sensor itself. The data identification feature enables the device to locate the input port where the sensor is connected and self adjust when a sensor is removed or replaced. The device is able to collect physical data, whether or not a function of a time.

  2. Portable data collection device

    DOEpatents

    French, P.D.

    1996-06-11

    The present invention provides a portable data collection device that has a variety of sensors that are interchangeable with a variety of input ports in the device. The various sensors include a data identification feature that provides information to the device regarding the type of physical data produced by each sensor and therefore the type of sensor itself. The data identification feature enables the device to locate the input port where the sensor is connected and self adjust when a sensor is removed or replaced. The device is able to collect physical data, whether or not a function of a time. 7 figs.

  3. Unitary lens semiconductor device

    DOEpatents

    Lear, K.L.

    1997-05-27

    A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

  4. Unitary lens semiconductor device

    DOEpatents

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  5. Numerical simulation of offset-drain amorphous oxide-based thin-film transistors

    NASA Astrophysics Data System (ADS)

    Jeong, Jaewook

    2016-11-01

    In this study, we analyzed the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with an offset-drain structure by technology computer aided design (TCAD) simulation. When operating in a linear region, an enhancement-type TFT shows poor field-effect mobility because most conduction electrons are trapped in acceptor-like defects in an offset region when the offset length (L off) exceeds 0.5 µm, whereas a depletion-type TFT shows superior field-effect mobility owing to the high free electron density in the offset region compared with the trapped electron density. When operating in the saturation region, both types of TFTs show good field-effect mobility comparable to that of a reference TFT with a large gate overlap. The underlying physics of the depletion and enhancement types of offset-drain TFTs are systematically analyzed.

  6. Electrochromic display device

    NASA Astrophysics Data System (ADS)

    Nicholson, M. M.

    1984-07-01

    This invention relates to electrochromic devices. In one aspect it relates to electrically controllable display devices. In another aspect it relates to electrically tunable optical or light filters. In yet another aspect it relates to a chemical sensor device which employs a color changing film. There are many uses for electrically controllable display devices. A number of such devices have been in commercial use for some time. These display devices include liquid crystal displays, light emitting diode displays, plasma displays, and the like. Light emitting diode displays and plasma display panels both suffer from the fact that they are active. Light emissive devices which require substantial power for their operation, In addition, it is difficult to fabricate light emitting diode displays in a manner which renders them easily distinguishable under bright ambient illumination. Liquid crystal displays suffer from the disadvantage that they are operative only over a limited temperature range and have substantially no memory within the liquid crystal material.

  7. Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states

    NASA Astrophysics Data System (ADS)

    Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun

    2016-05-01

    Understanding the charge trapping nature of nano-crystalline oxide semiconductor thin film transistors (TFTs) is one of the most important requirements for their successful application. In our investigation, we employed a fast-pulsed I-V technique for understanding the charge trapping phenomenon and for characterizing the intrinsic device performance of an amorphous/nano-crystalline indium-hafnium-zinc-oxide semiconductor TFT with varying density of states in the bulk. Because of the negligible transient charging effect with a very short pulse, the source-to-drain current obtained with the fast-pulsed I-V measurement was higher than that measured by the direct-current characterization method. This is because the fast-pulsed I-V technique provides a charge-trap free environment, suggesting that it is a representative device characterization methodology of TFTs. In addition, a pulsed source-to-drain current versus time plot was used to quantify the dynamic trapping behavior. We found that the charge trapping phenomenon in amorphous/nano-crystalline indium-hafnium-zinc-oxide TFTs is attributable to the charging/discharging of sub-gap density of states in the bulk and is dictated by multiple trap-to-trap processes.

  8. Direct electrostatic toner marking with poly(3,4-ethylenedioxythiophene)polystyrenesulfonate bilayer devices

    NASA Astrophysics Data System (ADS)

    Kanungo, Mandakini; Law, Kock-Yee; Zhang, Yuanjia

    2012-10-01

    photoreceptor with the PEDOT bilayer device that is controlled by an active backplane. The operating bias estimated for the Thin Film Transistors (TFTs) in the backplane is about -200 V. We believe that the bias voltage can be further reduced by using a thinner charge transport layer and by optimizing the toner development process. Although the bias voltage is still high, it is within reach for today's high-voltage TFT technology.

  9. Stretchable Organic Semiconductor Devices.

    PubMed

    Qian, Yan; Zhang, Xinwen; Xie, Linghai; Qi, Dianpeng; Chandran, Bevita K; Chen, Xiaodong; Huang, Wei

    2016-11-01

    Stretchable electronics are essential for the development of intensely packed collapsible and portable electronics, wearable electronics, epidermal and bioimplanted electronics, 3D surface compliable devices, bionics, prosthesis, and robotics. However, most stretchable devices are currently based on inorganic electronics, whose high cost of fabrication and limited processing area make it difficult to produce inexpensive, large-area devices. Therefore, organic stretchable electronics are highly attractive due to many advantages over their inorganic counterparts, such as their light weight, flexibility, low cost and large-area solution-processing, the reproducible semiconductor resources, and the easy tuning of their properties via molecular tailoring. Among them, stretchable organic semiconductor devices have become a hot and fast-growing research field, in which great advances have been made in recent years. These fantastic advances are summarized here, focusing on stretchable organic field-effect transistors, light-emitting devices, solar cells, and memory devices.

  10. Barrier breaching device

    DOEpatents

    Honodel, C.A.

    1983-06-01

    A barrier breaching device that is designed primarily for opening holes in interior walls of buildings uses detonating fuse for explosive force. The fuse acts as the ribs or spokes of an umbrella-like device that may be opened up to form a cone. The cone is placed against the wall so that detonating fuse that rings the base of the device and which is ignited by the spoke-like fuses serves to cut a circular hole in the wall.

  11. Sensor sentinel computing device

    DOEpatents

    Damico, Joseph P.

    2016-08-02

    Technologies pertaining to authenticating data output by sensors in an industrial environment are described herein. A sensor sentinel computing device receives time-series data from a sensor by way of a wireline connection. The sensor sentinel computing device generates a validation signal that is a function of the time-series signal. The sensor sentinel computing device then transmits the validation signal to a programmable logic controller in the industrial environment.

  12. [New Medical Device Evaluation].

    PubMed

    Ikeda, Koji

    2016-01-01

    In this presentation, as a member of the Harmonization by Doing (HBD) project, I discuss the significance of regulatory science in global medical device development and our experience in the international collaboration process for medical devices. In Japan, most innovative medical therapeutic devices were previously developed and exported by foreign-based companies. Due to this device lag, Japanese had minimal opportunities for receiving treatment with innovative medical devices. To address this issue, the Japanese government has actively accepted foreign clinical trial results and promoted global clinical trials in projects such as HBD. HBD is a project with stakeholders from academia, regulatory authorities, and industry in the US and Japan to promote global clinical trials and reduce device lags. When the project started, medical device clinical trials were not actively conducted in Japan at not just hospitals but also at medical device companies. We started to identify issues under the concept of HBD. After 10 years, we have now become key members in global clinical trials and able to obtain approvals without delay. Recently, HBD has started promoting international convergence. Physicians and regulatory authorities play central roles in compiling guidelines for the clinical evaluation of medical device development, which will be a more active field in the near future. The guidelines compiled will be confirmed with members of academia and regulatory authorities in the United Sates.

  13. New unorthodox semiconductor devices

    NASA Astrophysics Data System (ADS)

    Board, K.

    1985-12-01

    A range of new semiconductor devices, including a number of structures which rely entirely upon new phenomena, are discussed. Unipolar two-terminal devices, including impurity-controlled barriers and graded composition barriers, are considered, as are new transistor structures, including the hot-electron camel transistor, the planar-doped barrier transistor, the thermionic emission transistor, and the permeable base transistor. Regenerative switching devices are addressed, including the metal-tunnel insulator-semiconductor switch, the polysilicon switch, MIS, and MISIM switching structures, and the triangular-barrier switch. Heterostructure devices are covered, including the heterojunction bipolar transistor, the selectively doped heterojunction transistor, heterojunction lasers, and quantum-well structures.

  14. Interconnected semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  15. High efficiency photovoltaic device

    DOEpatents

    Guha, Subhendu; Yang, Chi C.; Xu, Xi Xiang

    1999-11-02

    An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.

  16. Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Park, Jin-Seong; Kim, Tae-Woong; Stryakhilev, Denis; Lee, Jae-Sup; An, Sung-Guk; Pyo, Yong-Shin; Lee, Dong-Bum; Mo, Yeon Gon; Jin, Dong-Un; Chung, Ho Kyoon

    2009-07-01

    We have fabricated 6.5 in. flexible full-color top-emission active matrix organic light-emitting diode display on a polyimide (PI) substrate driven amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). The a-IGZO TFTs exhibited field-effect mobility (μFE) of 15.1 cm2/V s, subthreshold slope of 0.25 V/dec, threshold voltage (VTH) of 0.9 V. The electrical characteristics of TFTs on PI substrate, including a bias-stress instability after 1 h long gate bias at 15 V, were indistinguishable from those on glass substrate and showed high degree of spatial uniformity. TFT samples on 10 μm thick PI substrate withstood bending down to R =3 mm under tension and compression without any performance degradation.

  17. Advanced resistive exercise device

    NASA Technical Reports Server (NTRS)

    Raboin, Jasen L. (Inventor); Niebuhr, Jason (Inventor); Cruz, Santana F. (Inventor); Lamoreaux, Christopher D. (Inventor)

    2008-01-01

    The present invention relates to an exercise device, which includes a vacuum cylinder and a flywheel. The flywheel provides an inertial component to the load, which is particularly well suited for use in space as it simulates exercising under normal gravity conditions. Also, the present invention relates to an exercise device, which has a vacuum cylinder and a load adjusting armbase assembly.

  18. Emergency descent device

    NASA Technical Reports Server (NTRS)

    Belew, R. R.

    1974-01-01

    Device includes cable wound on reel; special assembly enclosed in fluid medium controls unwinding speed of cable during descent. Device is compact and reliable. It can be rewound quickly because reel disengages from latches when it is turned in opposite direction.

  19. Assistive Listening Devices

    ERIC Educational Resources Information Center

    Warick, Ruth; Clark, Catherine; Dancer, Jesse; Sinclair, Stephen

    1997-01-01

    For most hard of hearing students, and for some who are deaf, hearing aids and related sound amplification devices are of great benefit in their communication and learning. Technology has more recently produced an additional array of electronic devices which benefit many hard of hearing students. This report will deal primarily with the relatively…

  20. Devices and Educational Change

    ERIC Educational Resources Information Center

    Nespor, Jan

    2011-01-01

    This paper uses Actor Network Theory to examine two cases of device-mediated educational change, one involving a computer-assisted interactive video module that provided a half-hour of instruction for a university course, the other an assistive communication device that proved a supposedly retarded pre-school child to be intelligent. The paper…

  1. Capillary interconnect device

    DOEpatents

    Renzi, Ronald F

    2013-11-19

    An interconnecting device for connecting a plurality of first fluid-bearing conduits to a corresponding plurality of second fluid-bearing conduits thereby providing fluid communication between the first fluid-bearing conduits and the second fluid-bearing conduits. The device includes a manifold and one or two ferrule plates that are held by compressive axial forces.

  2. Self-actuated device

    DOEpatents

    Hecht, Samuel L.

    1984-01-01

    A self-actuated device, of particular use as a valve or an orifice for nuclear reactor fuel and blanket assemblies, in which a gas produced by a neutron induced nuclear reaction gradually accumulates as a function of neutron fluence. The gas pressure increase occasioned by such accumulation of gas is used to actuate the device.

  3. Microfabricated particle focusing device

    DOEpatents

    Ravula, Surendra K.; Arrington, Christian L.; Sigman, Jennifer K.; Branch, Darren W.; Brener, Igal; Clem, Paul G.; James, Conrad D.; Hill, Martyn; Boltryk, Rosemary June

    2013-04-23

    A microfabricated particle focusing device comprises an acoustic portion to preconcentrate particles over large spatial dimensions into particle streams and a dielectrophoretic portion for finer particle focusing into single-file columns. The device can be used for high throughput assays for which it is necessary to isolate and investigate small bundles of particles and single particles.

  4. Inverted organic photosensitive devices

    DOEpatents

    Forrest, Stephen R.; Bailey-Salzman, Rhonda F.

    2016-12-06

    The present disclosure relates to organic photosensitive optoelectronic devices grown in an inverted manner. An inverted organic photosensitive optoelectronic device of the present disclosure comprises a reflective electrode, an organic donor-acceptor heterojunction over the reflective electrode, and a transparent electrode on top of the donor-acceptor heterojunction.

  5. STORM INLET FILTRATION DEVICE

    EPA Science Inventory

    Five field tests were conducted to evaluate the effectiveness of the Storm and Groundwater Enhancement Systems (SAGES) device for removing contaminants from stormwater. The SAGES device is a three-stage filtering system that could be used as a best management practices (BMP) retr...

  6. Device for removing blackheads

    DOEpatents

    Berkovich, Tamara

    1995-03-07

    A device for removing blackheads from pores in the skin having a elongated handle with a spoon shaped portion mounted on one end thereof, the spoon having multiple small holes piercing therethrough. Also covered is method for using the device to remove blackheads.

  7. Vaginal mechanical contraceptive devices.

    PubMed

    Smith, M; Barwin, B N

    1983-10-01

    The alleged adverse effects of oral contraceptives and intrauterine devices have led to increased consumer and physician demand for vaginal contraceptive devices. The efficacy and the advantages and disadvantages of vaginal sponges, cervical caps and diaphragms are discussed and compared in this article.

  8. Statement on intrauterine devices.

    PubMed

    1981-12-01

    These policy statements and guidelines from the International Planned Parenthood Federation's (IPPF) International Medical Advisory Panel (IMAP) concern IUDs. The following contraindications to IUD use are recognized: 1) pelvic inflaminatory disease, 2) known or suspected pregnancy, 3) history of previous ectopic pregnancy, 4) gynecological bleeding disorders, 5) suspected malignancy of the genital tract, 6) congenital uterine abnormalities or fibroids distorting the cavity, and 7) anemia, blood coagulation, severe cervical stenosis, copper allergy, Wilson's disease, and others. Generalities regarding appropriate IUDs are: 1) non-medicated devices (e.g. Lippes Loop) are studied for women who may not return for regular check-ups, 2) smaller medicated devices usually cause less menstrual blood loss than the non-medicated devices, 3) smaller devices are better for a smaller uterus and larger devices for the larger uterus, and 4) when a smaller device is expelled it is advisable to try a larger one and vice versa. Dalkon Shields should not be used by the IPPF system and all women using them should have the device removed. Correct insertion of IUDs is important and should be done by properly trained personnel. The timing of insertion is best during the menstrual period. Withdrawal of the applicator while leaving the device in place is the recommended insertion technique. Sterilization of IUDs should follow instructions on bulk-packaged IUDs. Complications include perforation, bleeding and pain, infection, and ectopic pregnancy. IUD removal should be done during menstruation. Good clinical management and follow-up care are recommended.

  9. Microwave device investigations

    NASA Technical Reports Server (NTRS)

    Choudhury, K. K. D.; Haddad, G. I.; Kwok, S. P.; Masnari, N. A.; Trew, R. J.

    1972-01-01

    Materials, devices and novel schemes for generation, amplification and detection of microwave and millimeter wave energy are studied. Considered are: (1) Schottky-barrier microwave devices; (2) intermodulation products in IMPATT diode amplifiers; and (3) harmonic generation using Read diode varactors.

  10. Device for cutting protrusions

    DOEpatents

    Bzorgi, Fariborz M.

    2011-07-05

    An apparatus for clipping a protrusion of material is provided. The protrusion may, for example, be a bolt head, a nut, a rivet, a weld bead, or a temporary assembly alignment tab protruding from a substrate surface of assembled components. The apparatus typically includes a cleaver having a cleaving edge and a cutting blade having a cutting edge. Generally, a mounting structure configured to confine the cleaver and the cutting blade and permit a range of relative movement between the cleaving edge and the cutting edge is provided. Also typically included is a power device coupled to the cutting blade. The power device is configured to move the cutting edge toward the cleaving edge. In some embodiments the power device is activated by a momentary switch. A retraction device is also generally provided, where the retraction device is configured to move the cutting edge away from the cleaving edge.

  11. Fluidic nanotubes and devices

    DOEpatents

    Yang, Peidong; He, Rongrui; Goldberger, Joshua; Fan, Rong; Wu, Yiying; Li, Deyu; Majumdar, Arun

    2010-01-10

    Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

  12. Fluidic nanotubes and devices

    DOEpatents

    Yang, Peidong; He, Rongrui; Goldberger, Joshua; Fan, Rong; Wu, Yiying; Li, Deyu; Majumdar, Arun

    2008-04-08

    Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

  13. Planar electrochemical device assembly

    DOEpatents

    Jacobson; Craig P. , Visco; Steven J. , De Jonghe; Lutgard C.

    2010-11-09

    A pre-fabricated electrochemical device having a dense electrolyte disposed between an anode and a cathode preferably deposited as thin films is bonded to a porous electrically conductive support. A second porous electrically conductive support may be bonded to a counter electrode of the electrochemical device. Multiple electrochemical devices may be bonded in parallel to a single porous support, such as a perforated sheet to provide a planar array. Planar arrays may be arranged in a stacked interconnected array. A method of making a supported electrochemical device is disclosed wherein the method includes a step of bonding a pre-fabricated electrochemical device layer to an existing porous metal or porous metal alloy layer.

  14. Planar electrochemical device assembly

    DOEpatents

    Jacobson, Craig P.; Visco, Steven J.; De Jonghe, Lutgard C.

    2007-06-19

    A pre-fabricated electrochemical device having a dense electrolyte disposed between an anode and a cathode preferably deposited as thin films is bonded to a porous electrically conductive support. A second porous electrically conductive support may be bonded to a counter electrode of the electrochemical device. Multiple electrochemical devices may be bonded in parallel to a single porous support, such as a perforated sheet to provide a planar array. Planar arrays may be arranged in a stacked interconnected array. A method of making a supported electrochemical device is disclosed wherein the method includes a step of bonding a pre-fabricated electrochemical device layer to an existing porous metal or porous metal alloy layer.

  15. Heat tube device

    NASA Technical Reports Server (NTRS)

    Khattar, Mukesh K. (Inventor)

    1990-01-01

    The present invention discloses a heat tube device through which a working fluid can be circulated to transfer heat to air in a conventional air conditioning system. The heat tube device is disposable about a conventional cooling coil of the air conditioning system and includes a plurality of substantially U-shaped tubes connected to a support structure. The support structure includes members for allowing the heat tube device to be readily positioned about the cooling coil. An actuatable adjustment device is connected to the U-shaped tubes for allowing, upon actuation thereof, for the heat tubes to be simultaneously rotated relative to the cooling coil for allowing the heat transfer from the heat tube device to air in the air conditioning system to be selectively varied.

  16. Optical thin film devices

    NASA Astrophysics Data System (ADS)

    Mao, Shuzheng

    1991-11-01

    Thin film devices are applied to almost all modern scientific instruments, and these devices, especially optical thin film devices, play an essential role in the performances of the instruments, therefore, they are attracting more and more attention. Now there are numerous kinds of thin film devices and their applications are very diversified. The 300-page book, 'Thin Film Device and Applications,' by Prof. K. L. Chopra gives some general ideas, and my paper also outlines the designs, fabrication, and applications of some optical thin film devices made in my laboratory. Optical thin film devices have been greatly developed in the recent decades. Prof. A. Thelan has given a number of papers on the theory and techniques, Prof. H. A. Macleod's book, 'Thin Film Optical Filters,' has concisely concluded the important concepts of optical thin film devices, and Prof. J. A. Dobrowobski has proposed many successful designs for optical thin film devices. Recently, fully-automatic plants make it easier to produce thin film devices with various spectrum requirements, and some companies, such as Balzers, Leybold AG, Satis Vacuum AG, etc., have manufactured such kinds of coating plants for research or mass-production, and the successful example is the production of multilayer antireflection coatings with high stability and reproducibility. Therefore, it could be said that the design of optical thin film devices and coating plants is quite mature. However, we cannot expect that every problem has been solved, the R&D work still continues, the competition still continues, and new design concepts, new techniques, and new film materials are continually developed. Meanwhile, the high-price of fully-automatic coating plants makes unpopular, and automatic design of coating stacks is only the technique for optimizing the manual design according to the physical concepts and experience, in addition, not only the optical system, but also working environment should be taken into account when

  17. Contamination sampling device

    NASA Technical Reports Server (NTRS)

    Delgado, Felix A. (Inventor); Stern, Susan M. (Inventor)

    1998-01-01

    A contamination sample collection device has a wooden dowel with a cotton swab at one end, the cotton being covered by a nylon cloth and the wooden dowel being encapsulated by plastic tubing which is heat shrunk onto the dowel and onto a portion of the cotton swab to secure the cotton in place. Another plastic tube is heat shrunk onto the plastic that encapsulates the dowel and a portion of the nylon cloth to secure the nylon cloth in place. The device may thereafter be covered with aluminum foil protector. The device may be used for obtaining samples of contamination in clean room environments.

  18. Rain sampling device

    DOEpatents

    Nelson, Danny A.; Tomich, Stanley D.; Glover, Donald W.; Allen, Errol V.; Hales, Jeremy M.; Dana, Marshall T.

    1991-01-01

    The present invention constitutes a rain sampling device adapted for independent operation at locations remote from the user which allows rainfall to be sampled in accordance with any schedule desired by the user. The rain sampling device includes a mechanism for directing wet precipitation into a chamber, a chamber for temporarily holding the precipitation during the process of collection, a valve mechanism for controllably releasing samples of said precipitation from said chamber, a means for distributing the samples released from the holding chamber into vessels adapted for permanently retaining these samples, and an electrical mechanism for regulating the operation of the device.

  19. Rain sampling device

    DOEpatents

    Nelson, D.A.; Tomich, S.D.; Glover, D.W.; Allen, E.V.; Hales, J.M.; Dana, M.T.

    1991-05-14

    The present invention constitutes a rain sampling device adapted for independent operation at locations remote from the user which allows rainfall to be sampled in accordance with any schedule desired by the user. The rain sampling device includes a mechanism for directing wet precipitation into a chamber, a chamber for temporarily holding the precipitation during the process of collection, a valve mechanism for controllably releasing samples of the precipitation from the chamber, a means for distributing the samples released from the holding chamber into vessels adapted for permanently retaining these samples, and an electrical mechanism for regulating the operation of the device. 11 figures.

  20. INTERNAL CUTTING DEVICE

    DOEpatents

    Russell, W.H. Jr.

    1959-06-30

    A device is described for removing material from the interior of a hollow workpiece so as to form a true spherical internal surface in a workpiece, or to cut radial slots of an adjustable constant depth in an already established spherical internal surface. This is accomplished by a spring loaded cutting tool adapted to move axially wherein the entire force urging the tool against the workpiece is derived from the spring. Further features of importance involve the provision of a seal between the workpiece and the cutting device and a suction device for carrying away particles of removed material.

  1. Automobile maneuvering device

    SciTech Connect

    Ricciardi, R.

    1987-08-18

    An automobile maneuvering device is described which consists of: a chassis comprising transport wheels for permitting movement of the device along the ground, a drive wheel operably rotatably connected to the chassis, and means for rotating the drive wheel, clamp means operably connected to the chassis and spaced from and opposed to the drive wheel, the chassis including means to move the clamp means to engage one portion of an automobile tire with the drive wheel engaged at another portion of the automobile tire, and means to actuate the rotating means, so that with rotation of the drive wheel the automobile tire is rotated and the automobile and device moved along the ground.

  2. Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination

    NASA Astrophysics Data System (ADS)

    Huang, Xiaoming; Wu, Chenfei; Lu, Hai; Ren, Fangfang; Xu, Qingyu; Ou, Huiling; Zhang, Rong; Zheng, Youdou

    2012-06-01

    The electrical instability behaviors of a positive-gate-bias-stressed amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) are studied under monochromatic light illumination. It is found that as the wavelength of incident light reduces from 750 nm to 450 nm, the threshold voltage of the illuminated TFT shows a continuous negative shift, which is caused by photo-excitation of trapped electrons at the channel/dielectric interface. Meanwhile, an increase of the sub-threshold swing (SS) is observed when the illumination wavelength is below 625 nm (˜2.0 eV). The SS degradation is accompanied by a simultaneous increase of the field effect mobility (μFE) of the TFT, which then decreases at even shorter wavelength beyond 540 nm (˜2.3 eV). The variation of SS and μFE is explained by a physical model based on generation of singly ionized oxygen vacancies (Vo+) and double ionized oxygen vacancies (Vo2+) within the a-IGZO active layer by high energy photons, which would form trap states near the mid-gap and the conduction band edge, respectively.

  3. The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Nguyen, Ngoc; McCall, Briana; Alston, Robert; Collis, Ward; Iyer, Shanthi

    2015-10-01

    With the growing need for large area display technology and the push for a faster and cheaper alternative to the current amorphous indium gallium zinc oxide (a-IGZO) as the active channel layer for pixel-driven thin film transistors (TFTs) display applications, gallium tin zinc oxide (GSZO) has shown to be a promising candidate due to the similar electronic configuration of Sn4+ and In3+. In this work TFTs of GSZO sputtered films with only a few atomic % of Ga and Sn have been fabricated. A systematic and detailed comparison has been made of the properties of the GSZO films annealed at two temperatures: 140 °C and 450 °C. The electrical and optical stabilities of the respective devices have been studied to gain more insight into the degradation mechanism and are correlated with the initial TFT performance prior to the application of stress. Post deposition annealing at 450 °C of the films in air was found to lead to a higher atomic concentration of Sn4+ in these films and a superior quality of the film, as attested by the higher film density and less surface and interface roughness in comparison to the lower annealed temperature device. These result in significantly reduced shallow and deep interface traps with improved performance of the device exhibiting VON of -3.5 V, ION/IOFF of 108, field-effect mobility (μFE) of 4.46 cm2 V-1s-1, and sub-threshold swing of 0.38 V dec-1. The device is stable under both electrical and optical bias for wavelengths of 550 nm and above. Thus, this work demonstrates GSZO-based TFTs as a promising viable option to the IGZO TFTs by further tailoring the film composition and relevant processing temperatures.

  4. Devices for hearing loss

    MedlinePlus

    ... sounds, such as the doorbell or a ringing phone. They can also alert you to things happening ... telephone. Devices called amplifiers make sound louder. Some phones have amplifiers built-in. You can also attach ...

  5. Optical devices: A compilation

    NASA Technical Reports Server (NTRS)

    1976-01-01

    Technological developments in the field of optics devices which have potential utility outside the aerospace community are described. Optical instrumentation, light generation and transmission, and laser techniques are among the topics covered. Patent information is given.

  6. Authenticated sensor interface device

    SciTech Connect

    Coleman, Jody Rustyn; Poland, Richard W.

    2016-10-18

    A system and method for the secure storage and transmission of data is provided. A data aggregate device can be configured to receive secure data from a data source, such as a sensor, and encrypt the secure data using a suitable encryption technique, such as a shared private key technique, a public key encryption technique, a Diffie-Hellman key exchange technique, or other suitable encryption technique. The encrypted secure data can be provided from the data aggregate device to different remote devices over a plurality of segregated or isolated data paths. Each of the isolated data paths can include an optoisolator that is configured to provide one-way transmission of the encrypted secure data from the data aggregate device over the isolated data path. External data can be received through a secure data filter which, by validating the external data, allows for key exchange and other various adjustments from an external source.

  7. Devices for Arrhythmia

    MedlinePlus

    ... Disease Venous Thromboembolism Aortic Aneurysm More Devices for Arrhythmia Updated:Dec 21,2016 In a medical emergency, ... This content was last reviewed September 2016. Printable Arrhythmia Information Sheets What is Arrhythmia? What is Atrial ...

  8. High temperature measuring device

    DOEpatents

    Tokarz, Richard D.

    1983-01-01

    A temperature measuring device for very high design temperatures (to 2,000.degree. C.). The device comprises a homogenous base structure preferably in the form of a sphere or cylinder. The base structure contains a large number of individual walled cells. The base structure has a decreasing coefficient of elasticity within the temperature range being monitored. A predetermined quantity of inert gas is confined within each cell. The cells are dimensionally stable at the normal working temperature of the device. Increases in gaseous pressure within the cells will permanently deform the cell walls at temperatures within the high temperature range to be measured. Such deformation can be correlated to temperature by calibrating similarly constructed devices under known time and temperature conditions.

  9. Adhesion testing device

    NASA Technical Reports Server (NTRS)

    LaPeyronnie, Glenn M. (Inventor); Huff, Charles M. (Inventor)

    2010-01-01

    The present invention provides a testing apparatus and method for testing the adhesion of a coating to a surface. The invention also includes an improved testing button or dolly for use with the testing apparatus and a self aligning button hook or dolly interface on the testing apparatus. According to preferred forms, the apparatus and method of the present invention are simple, portable, battery operated rugged, and inexpensive to manufacture and use, are readily adaptable to a wide variety of uses, and provide effective and accurate testing results. The device includes a linear actuator driven by an electric motor coupled to the actuator through a gearbox and a rotatable shaft. The electronics for the device are contained in the head section of the device. At the contact end of the device, is positioned a self aligning button hook, attached below the load cell located on the actuator shaft.

  10. Thermoelectric materials and devices

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor); Talcott, Noel A. (Inventor)

    2011-01-01

    New thermoelectric materials comprise highly [111]-oriented twinned group IV alloys on the basal plane of trigonal substrates, which exhibit a high thermoelectric figure of merit and good material performance, and devices made with these materials.

  11. Microreactor Array Device

    PubMed Central

    Wiktor, Peter; Brunner, Al; Kahn, Peter; Qiu, Ji; Magee, Mitch; Bian, Xiaofang; Karthikeyan, Kailash; LaBaer, Joshua

    2015-01-01

    We report a device to fill an array of small chemical reaction chambers (microreactors) with reagent and then seal them using pressurized viscous liquid acting through a flexible membrane. The device enables multiple, independent chemical reactions involving free floating intermediate molecules without interference from neighboring reactions or external environments. The device is validated by protein expressed in situ directly from DNA in a microarray of ~10,000 spots with no diffusion during three hours incubation. Using the device to probe for an autoantibody cancer biomarker in blood serum sample gave five times higher signal to background ratio compared to standard protein microarray expressed on a flat microscope slide. Physical design principles to effectively fill the array of microreactors with reagent and experimental results of alternate methods for sealing the microreactors are presented. PMID:25736721

  12. Water-walking devices

    NASA Astrophysics Data System (ADS)

    Hu, David L.; Prakash, Manu; Chan, Brian; Bush, John W. M.

    2007-11-01

    We report recent efforts in the design and construction of water-walking machines inspired by insects and spiders. The fundamental physical constraints on the size, proportion and dynamics of natural water-walkers are enumerated and used as design criteria for analogous mechanical devices. We report devices capable of rowing along the surface, leaping off the surface and climbing menisci by deforming the free surface. The most critical design constraint is that the devices be lightweight and non-wetting. Microscale manufacturing techniques and new man-made materials such as hydrophobic coatings and thermally actuated wires are implemented. Using high-speed cinematography and flow visualization, we compare the functionality and dynamics of our devices with those of their natural counterparts.

  13. Development of electrochromic devices.

    PubMed

    Pawlicka, A

    2009-01-01

    Electrochromic devices (ECD) are systems of considerable commercial interest due to their controllable transmission, absorption and/or reflectance. For instance, these devices are mainly applied to glare attenuation in automobile rearview mirrors and also in some smart windows that can regulate the solar gains of buildings. Other possible applications of ECDs include solar cells, small- and large-area flat panel displays, and frozen food monitoring and document authentication also are of great interest. Over the past 20 years almost 1000 patents and 1500 papers in journals and proceedings have been published with the key words "electrochromic windows". Most of these documents report on materials for electrochromic devices and only some of them about complete electrochromic devices. This paper describes the first patents and some of the recent ones on ECDs, whose development is possible due to the advances in nanotechnology.

  14. Ferroelectric Light Control Device

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Kim, Jae-Woo (Inventor); Elliott, Jr., James R. (Inventor)

    2008-01-01

    A light control device is formed by ferroelectric material and N electrodes positioned adjacent thereto to define an N-sided regular polygonal region or circular region there between where N is a multiple of four.

  15. Dielectrophoretically tunable optofluidic devices

    NASA Astrophysics Data System (ADS)

    Xu, Su; Ren, Hongwen; Wu, Shin-Tson

    2013-12-01

    Tunable optofluidic devices exhibit some unique characteristics that are not achievable in conventional solid-state photonic devices. They provide exciting opportunities for emerging applications in imaging, information processing, sensing, optical communication, lab-on-a-chip and biomedical engineering. A dielectrophoresis effect is an important physical mechanism to realize tunable optofluidic devices. Via balancing the voltage-induced dielectric force and interfacial tension, the liquid interface can be dynamically manipulated and the optical output reconfigured or adaptively tuned in real time. Dielectrophoretically tunable optofluidic devices offer several attractive features, such as rapid prototyping, miniaturization, easy integration and low power consumption. In this review paper, we first explain the underlying operation principles and then review some recent progress in this field, covering the topics of adaptive lens, beam steering, iris, grating, optical switch/attenuator and single pixel display. Finally, the future perspectives are discussed.

  16. Intrauterine device (image)

    MedlinePlus

    ... uses copper as the active contraceptive, others use progesterone in a plastic device. IUDs are very effective ... less than 2% chance per year for the progesterone IUD, less than 1% chance per year for ...

  17. Advanced underwater lift device

    NASA Technical Reports Server (NTRS)

    Flanagan, David T.; Hopkins, Robert C.

    1993-01-01

    Flexible underwater lift devices ('lift bags') are used in underwater operations to provide buoyancy to submerged objects. Commercially available designs are heavy, bulky, and awkward to handle, and thus are limited in size and useful lifting capacity. An underwater lift device having less than 20 percent of the bulk and less than 10 percent of the weight of commercially available models was developed. The design features a dual membrane envelope, a nearly homogeneous envelope membrane stress distribution, and a minimum surface-to-volume ratio. A proof-of-concept model of 50 kg capacity was built and tested. Originally designed to provide buoyancy to mock-ups submerged in NASA's weightlessness simulators, the device may have application to water-landed spacecraft which must deploy flotation upon impact, and where launch weight and volume penalties are significant. The device may also be useful for the automated recovery of ocean floor probes or in marine salvage applications.

  18. Microreactor Array Device

    NASA Astrophysics Data System (ADS)

    Wiktor, Peter; Brunner, Al; Kahn, Peter; Qiu, Ji; Magee, Mitch; Bian, Xiaofang; Karthikeyan, Kailash; Labaer, Joshua

    2015-03-01

    We report a device to fill an array of small chemical reaction chambers (microreactors) with reagent and then seal them using pressurized viscous liquid acting through a flexible membrane. The device enables multiple, independent chemical reactions involving free floating intermediate molecules without interference from neighboring reactions or external environments. The device is validated by protein expressed in situ directly from DNA in a microarray of ~10,000 spots with no diffusion during three hours incubation. Using the device to probe for an autoantibody cancer biomarker in blood serum sample gave five times higher signal to background ratio compared to standard protein microarray expressed on a flat microscope slide. Physical design principles to effectively fill the array of microreactors with reagent and experimental results of alternate methods for sealing the microreactors are presented.

  19. Marine Sanitation Devices (MSDs)

    EPA Pesticide Factsheets

    Marine sanitation devices treat or retain sewage from vessels, and have performance standards set by the EPA. This page provides information on MSDs, including who must use an MSD, states' roles, types of MSDs and standards.

  20. Water-walking devices

    NASA Astrophysics Data System (ADS)

    Hu, David L.; Prakash, Manu; Chan, Brian; Bush, John W. M.

    We report recent efforts in the design and construction of water-walking machines inspired by insects and spiders. The fundamental physical constraints on the size, proportion and dynamics of natural water-walkers are enumerated and used as design criteria for analogous mechanical devices. We report devices capable of rowing along the surface, leaping off the surface and climbing menisci by deforming the free surface. The most critical design constraint is that the devices be lightweight and non-wetting. Microscale manufacturing techniques and new man-made materials such as hydrophobic coatings and thermally actuated wires are implemented. Using highspeed cinematography and flow visualization, we compare the functionality and dynamics of our devices with those of their natural counterparts.

  1. Slit injection device

    DOEpatents

    Alger, Terry W.; Schlitt, Leland G.; Bradley, Laird P.

    1976-06-15

    A laser cavity electron beam injection device provided with a single elongated slit window for passing a suitably shaped electron beam and means for varying the current density of the injected electron beam.

  2. Geometry and Cloaking Devices

    NASA Astrophysics Data System (ADS)

    Ochiai, T.; Nacher, J. C.

    2011-09-01

    Recently, the application of geometry and conformal mappings to artificial materials (metamaterials) has attracted the attention in various research communities. These materials, characterized by a unique man-made structure, have unusual optical properties, which materials found in nature do not exhibit. By applying the geometry and conformal mappings theory to metamaterial science, it may be possible to realize so-called "Harry Potter cloaking device". Although such a device is still in the science fiction realm, several works have shown that by using such metamaterials it may be possible to control the direction of the electromagnetic field at will. We could then make an object hidden inside of a cloaking device. Here, we will explain how to design invisibility device using differential geometry and conformal mappings.

  3. Nanowire Thermoelectric Devices

    NASA Technical Reports Server (NTRS)

    Borshchevsky, Alexander; Fleurial, Jean-Pierre; Herman, Jennifer; Ryan, Margaret

    2005-01-01

    Nanowire thermoelectric devices, now under development, are intended to take miniaturization a step beyond the prior state of the art to exploit the potential advantages afforded by shrinking some device features to approximately molecular dimensions (of the order of 10 nm). The development of nanowire-based thermoelectric devices could lead to novel power-generating, cooling, and sensing devices that operate at relatively low currents and high voltages. Recent work on the theory of thermoelectric devices has led to the expectation that the performance of such a device could be enhanced if the diameter of the wires could be reduced to a point where quantum confinement effects increase charge-carrier mobility (thereby increasing the Seebeck coefficient) and reduce thermal conductivity. In addition, even in the absence of these effects, the large aspect ratios (length of the order of tens of microns diameter of the order of tens of nanometers) of nanowires would be conducive to the maintenance of large temperature differences at small heat fluxes. The predicted net effect of reducing diameters to the order of tens of nanometers would be to increase its efficiency by a factor of .3. Nanowires made of thermoelectric materials and devices that comprise arrays of such nanowires can be fabricated by electrochemical growth of the thermoelectric materials in templates that contain suitably dimensioned pores (10 to 100 nm in diameter and 1 to 100 microns long). The nanowires can then be contacted in bundles to form devices that look similar to conventional thermoelectric devices, except that a production version may contain nearly a billion elements (wires) per square centimeter, instead of fewer than a hundred as in a conventional bulk thermoelectric device or fewer than 100,000 as in a microdevice. It is not yet possible to form contacts with individual nanowires. Therefore, in fabricating a nanowire thermoelectric device, one forms contacts on nanowires in bundles of the

  4. Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Nomura, Kenji; Kamiya, Toshio; Ikenaga, Eiji; Yanagi, Hiroshi; Kobayashi, Keisuke; Hosono, Hideo

    2011-04-01

    In a previous work, we examined subgap states in highly doped amorphous In-Ga-Zn-O (a-IGZO) films by hard x-ray photoelectron spectroscopy (HX-PES) and found they had subgap electronic states above the valence band maximum (VBM) with the densities > 5 × 1020 cm-3 and just below the Fermi level with the densities > 5 × 1019 cm-3 [K. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yang, K. Kobayashi, M. Hirano, and H. Hosono, Appl. Phys. Lett. 92, 202117 (2008)]; however, their electron densities (Ne > 3 × 1019 cm-3) are rather high and not compatible with rational properties required for active channel layers in thin-film transistors (TFTs). In this work, we report the effects of Ne and thermal annealing on the subgap states in order to provide the data useful for actual TFTs. It was found that the low-Ne a-IGZO films had extra subgap states above VBM similar to the previous report, but their densities were as small as ˜2.0 × 1020 cm-3 for the highly resistive, wet-annealed a-IGZO films. Angle-dependent HX-PES revealed that the subgap states above VBM concentrate in the surface region. The O 1s peak indicated that the wet annealing suppressed the generation of subgap states by terminating these states with -OH bonds. The subgap states below EF were observed commonly in all the samples including ZnO, crystalline (c-) IGZO and a-IGZO. It is concluded that these states below EF are neither related to the disordered structures of a-IGZO nor to their TFT characteristics. It is considered that these states are related to the metastable states created by the high-energy photons in vacuum.

  5. Wireless device monitoring systems and monitoring devices, and associated methods

    DOEpatents

    McCown, Steven H; Derr, Kurt W; Rohde, Kenneth W

    2014-05-27

    Wireless device monitoring systems and monitoring devices include a communications module for receiving wireless communications of a wireless device. Processing circuitry is coupled with the communications module and configured to process the wireless communications to determine whether the wireless device is authorized or unauthorized to be present at the monitored area based on identification information of the wireless device. Methods of monitoring for the presence and identity of wireless devices are also provided.

  6. Raney nickel catalytic device

    DOEpatents

    O'Hare, Stephen A.

    1978-01-01

    A catalytic device for use in a conventional coal gasification process which includes a tubular substrate having secured to its inside surface by expansion a catalytic material. The catalytic device is made by inserting a tubular catalytic element, such as a tubular element of a nickel-aluminum alloy, into a tubular substrate and heat-treating the resulting composite to cause the tubular catalytic element to irreversibly expand against the inside surface of the substrate.

  7. Nitinol Temperature Monitoring Devices

    DTIC Science & Technology

    1976-01-09

    AD-A021 578 NITINOL TEMPERATURE MONITORING DEVICES William J. Buehler, et al Naval Surface Weapons Center Silver Spring, Maryland 9 January 1976...LABORATORY S NITINOL TEMPERATURE MONITORING DEVICES 9 JANUARY 1976 NAVAL SURFACE WEAPONS CENTER WHITE OAK LABORATORY SILVER SPRING, MARYLAND 20910 * Approved...GOVT ACCESSION NO. 3. RECIPIIENT’S CATALOG NUMBER NSWC/WOL/TR 75-140 ____ ______ 4 TITLE (and Subtitle) 5. TYPE OF REPCRT & PERIOD COVERED Nitinol

  8. Inverted organic photosensitive device

    DOEpatents

    Forrest, Stephen R.; Tong, Xiaoran; Lee, Jun Yeob; Cho, Yong Joo

    2015-09-08

    There is disclosed a method for preparing the surface of a metal substrate. The present disclosure also relates to an organic photovoltaic device including a metal substrate made by such method. Also disclosed herein is an inverted photosensitive device including a stainless steel foil reflective electrode, an organic donor-acceptor heterojunction over the reflective electrode, and a transparent electrode over the donor-acceptor heterojunction.

  9. Electronic security device

    DOEpatents

    Eschbach, E.A.; LeBlanc, E.J.; Griffin, J.W.

    1992-03-17

    The present invention relates to a security device having a control box containing an electronic system and a communications loop over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system and a detection module capable of registering changes in the voltage and phase of the signal transmitted over the loop. 11 figs.

  10. Electronic security device

    DOEpatents

    Eschbach, Eugene A.; LeBlanc, Edward J.; Griffin, Jeffrey W.

    1992-01-01

    The present invention relates to a security device having a control box (12) containing an electronic system (50) and a communications loop (14) over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system (50) and a detection module (72) capable of registering changes in the voltage and phase of the signal transmitted over the loop.

  11. Intrauterine devices containing progesterone.

    PubMed

    Murad, F

    1977-05-01

    Characteristics of progesterone-releasing IUDs are reported. At present, the only progesterone-containing IUD on the market is Progestasert, a T-shaped ethylene vinyl acetate copolymer device containing 38 mg progesterone in silicone. The device releases approximately 65 mcg/day into the uterine cavity over the course of 1-year. The device does not alter pituitary function or ovulation, nor does it depend on a local mechanical effect. Rather, it may exert its effect by inhibiting sperm capacitation or survival, or it may prevent nidation by alterning the endometrium. The reported pregnancy rate for Progestasert is 1.9% in parous women and 2.5% in nulliparous women. This efficacy rate is similar to that for other IUDs and low-dose progestin-only oral contraceptives. Breakthrough bleeding is the most common side effect, and perhaps 10-15% of the acceptors will have the device removed for either bleeding, pain, or infection. The rate of spontaneous expulsion of the device is about 3-8%. It is recommended that the device be inserted during or shortly after the menstrual period.

  12. Contamination control device

    DOEpatents

    Clark, Robert M.; Cronin, John C.

    1977-01-01

    A contamination control device for use in a gas-insulated transmission bus consisting of a cylindrical center conductor coaxially mounted within a grounded cylindrical enclosure. The contamination control device is electrically connected to the interior surface of the grounded outer shell and positioned along an axial line at the lowest vertical position thereon. The contamination control device comprises an elongated metallic member having a generally curved cross-section in a first plane perpendicular to the axis of the bus and having an arcuate cross-section in a second plane lying along the axis of the bus. Each opposed end of the metallic member and its opposing sides are tapered to form a pair of generally converging and downward sloping surfaces to trap randomly moving conductive particles in the relatively field-free region between the metallic member and the interior surface of the grounded outer shell. The device may have projecting legs to enable the device to be spot welded to the interior of the grounded housing. The control device provides a high capture probability and prevents subsequent release of the charged particles after the capture thereof.

  13. Diamond Electronic Devices

    NASA Astrophysics Data System (ADS)

    Isberg, J.

    2010-11-01

    For high-power and high-voltage applications, silicon is by far the dominant semiconductor material. However, silicon has many limitations, e.g. a relatively low thermal conductivity, electric breakdown occurs at relatively low fields and the bandgap is 1.1 eV which effectively limits operation to temperatures below 175° C. Wide-bandgap materials, such as silicon carbide (SiC), gallium nitride (GaN) and diamond offer the potential to overcome both the temperature and power handling limitations of silicon. Diamond is the most extreme in this class of materials. By the fundamental material properties alone, diamond offers the largest benefits as a semiconductor material for power electronic applications. On the other hand, diamond has a problem with a large carrier activation energy of available dopants which necessitates specialised device concepts to allow room temperature (RT) operation. In addition, the role of common defects on the charge transport properties of diamond is poorly understood. Notwithstanding this, many proof-of-principle two-terminal and three-terminal devices have been made and tested. Two-terminal electronic diamond devices described in the literature include: p-n diodes, p-i-n diodes, various types of radiation detectors, Schottky diodes and photoconductive or electron beam triggered switches. Three terminal devices include e.g. MISFETs and JFETs. However, the development of diamond devices poses great challenges for the future. A particularly interesting way to overcome the doping problem, for which there has been some recent progress, is to make so-called delta doped (or pulse-doped) devices. Such devices utilise very thin (˜1 nm) doped layers in order to achieve high RT activation.

  14. Enhanced capacitance ratio and low minimum capacitance of varactor devices based on depletion-mode Ga-doped ZnO TFTs with a drain-offset structure

    NASA Astrophysics Data System (ADS)

    Remashan, K.; Choi, Y. S.; Park, S. J.; Jang, J. H.

    2012-10-01

    Depletion-mode Ga-doped ZnO thin-film transistors (TFTs) with a drain-offset configuration were fabricated employing a plasma-enhanced chemical vapour deposited Si3N4 gate insulator and a metal organic chemical vapour deposition grown Ga-doped ZnO channel layer. For comparison, conventional TFTs with drain-to-gate overlap were also fabricated. Capacitance-voltage characteristics of gate-to-drain capacitors and current-voltage characteristics of TFTs were measured. Although drain-offset TFTs exhibit poor device characteristics compared with conventional TFTs, these TFTs show better Cmax/Cmin ratio and Cmin values. The Cmax/Cmin ratio is as large as 71.83 and Cmin is as small as 0.3 fF µm-1 normalized for channel width, demonstrating the potential of these devices as varactors for circuit applications. Their better varactor performance is ascribed to the presence of a very small capacitance in the drain-offset region. The effect of drain-offset length variation on TFT and gate-to-drain capacitor performance is also reported.

  15. Scalability of carbon-nanotube-based thin film transistors for flexible electronic devices manufactured using an all roll-to-roll gravure printing system

    PubMed Central

    Koo, Hyunmo; Lee, Wookyu; Choi, Younchang; Sun, Junfeng; Bak, Jina; Noh, Jinsoo; Subramanian, Vivek; Azuma, Yasuo; Majima, Yutaka; Cho, Gyoujin

    2015-01-01

    To demonstrate that roll-to-roll (R2R) gravure printing is a suitable advanced manufacturing method for flexible thin film transistor (TFT)-based electronic circuits, three different nanomaterial-based inks (silver nanoparticles, BaTiO3 nanoparticles and single-walled carbon nanotubes (SWNTs)) were selected and optimized to enable the realization of fully printed SWNT-based TFTs (SWNT-TFTs) on 150-m-long rolls of 0.25-m-wide poly(ethylene terephthalate) (PET). SWNT-TFTs with 5 different channel lengths, namely, 30, 80, 130, 180, and 230 μm, were fabricated using a printing speed of 8 m/min. These SWNT-TFTs were characterized, and the obtained electrical parameters were related to major mechanical factors such as web tension, registration accuracy, impression roll pressure and printing speed to determine whether these mechanical factors were the sources of the observed device-to-device variations. By utilizing the electrical parameters from the SWNT-TFTs, a Monte Carlo simulation for a 1-bit adder circuit, as a reference, was conducted to demonstrate that functional circuits with reasonable complexity can indeed be manufactured using R2R gravure printing. The simulation results suggest that circuits with complexity, similar to the full adder circuit, can be printed with a 76% circuit yield if threshold voltage (Vth) variations of less than 30% can be maintained. PMID:26411839

  16. Spectral tailoring device

    DOEpatents

    Brager, H.R.; Schenter, R.E.; Carter, L.L.; Karnesky, R.A.

    1987-08-05

    A spectral tailoring device for altering the neutron energy spectra and flux of neutrons in a fast reactor thereby selectively to enhance or inhibit the transmutation rate of a target metrical to form a product isotope. Neutron moderators, neutron filters, neutron absorbers and neutron reflectors may be used as spectral tailoring devices. Depending on the intended use for the device, a member from each of these four classes of materials could be used singularly, or in combination, to provide a preferred neutron energy spectra and flux of the neutrons in the region of the target material. In one embodiment of the invention, an assembly is provided for enhancing the production of isotopes, such as cobalt 60 and gadolinium 153. In another embodiment of the invention, a spectral tailoring device is disposed adjacent a target material which comprises long lived or volatile fission products and the device is used to shift the neutron energy spectra and flux of neutrons in the region of the fission products to preferentially transmute them to produce a less volatile fission product inventory. 6 figs.

  17. Optomechanical medical devices (instruments)

    NASA Astrophysics Data System (ADS)

    Reiss, Roger S.

    2004-03-01

    Optomechanical Medical Devices (Instruments) use lightwaves (UV, Visible, IR) for one or more of the following functions; to observe, to measure, to record, to test (align) and or to cut/repair. The evolution of Optomechanical Medical Devices probably started when the first torch or candle or petrochemical lamp used a polished reflector (possibly with a concave configuration) to examine a part of a patient's body (possibly a wound).Once the glass lens was invented, light sources of any type could be forcussed to increase illuminating power on a selected area. Medical Devices have come a great distance since these early items. Skipping across time to three rather significant inventions and advancements, we are well into the era of Laser and Fiber Optics and Advanced Photodetectors, all being integrated into Medical Devices. The most notable fields have been Ophthalmology, Dermatology, and Surgery. All three fields have been able to incorporate both the use of the Laser and the use of Fiber Optics (and at times the use of Photodetectors), into a single device (instrument). Historical: Philipp Bozzini (a Doctor, maybe) in the early 1800's used a hollow tube (tube material not identified) to project the light of a candle through the tube to view a patient's 'what ever'. Only Philipp, the patient and G-d knows what was being viewed. This ws the first recorded information on what could be considered the very first 'Endoscope examination'

  18. Electrical apparatus lockout device

    DOEpatents

    Gonzales, Rick

    1999-01-01

    A simple lockout device for electrical equipment equipped with recessed power blades is described. The device comprises a face-plate (12) having a threaded member (14) attached thereto and apertures suitable for accommodating the power blades of a piece of electrical equipment, an elastomeric nose (16) abutting the face-plate having a hole for passage of the threaded member therethrough and power blade apertures in registration with those of the face-plate, a block (20) having a recess (34) in its forward face for receiving at least a portion of the hose, a hole therein for receiving the threaded member and an integral extension (26) extending from its rear face. A thumb screw (22) suitable for turning with the hands and having internal threads suitable for engaging the threaded member attached to the face-plate is inserted into a passage in the integral extension to engage the threaded member in such a fashion that when the device is inserted over the recessed power blades of a piece of electrical equipment and the thumb screw (22) tightened, the elastomeric nose (16) is compressed between the face-plate (12) and the block (20) forcing it to expand laterally thereby securing the device in the recess and precluding the accidental or intentional energization of the piece of equipment by attachment of a power cord to the recessed power blades. Means are provided in the interval extension and the thumb screw for the attachment of a locking device (46) which will satisfy OSHA standards.

  19. Fabricating Cotton Analytical Devices.

    PubMed

    Lin, Shang-Chi; Hsu, Min-Yen; Kuan, Chen-Meng; Tseng, Fan-Gang; Cheng, Chao-Min

    2016-08-30

    A robust, low-cost analytical device should be user-friendly, rapid, and affordable. Such devices should also be able to operate with scarce samples and provide information for follow-up treatment. Here, we demonstrate the development of a cotton-based urinalysis (i.e., nitrite, total protein, and urobilinogen assays) analytical device that employs a lateral flow-based format, and is inexpensive, easily fabricated, rapid, and can be used to conduct multiple tests without cross-contamination worries. Cotton is composed of cellulose fibers with natural absorptive properties that can be leveraged for flow-based analysis. The simple but elegant fabrication process of our cotton-based analytical device is described in this study. The arrangement of the cotton structure and test pad takes advantage of the hydrophobicity and absorptive strength of each material. Because of these physical characteristics, colorimetric results can persistently adhere to the test pad. This device enables physicians to receive clinical information in a timely manner and shows great potential as a tool for early intervention.

  20. Nonimaging radiant energy device

    DOEpatents

    Winston, Roland; Ning, Xiaohui

    1993-01-01

    A nonimaging radiant energy device may include a hyperbolically shaped reflective element with a radiant energy inlet and a radiant energy outlet. A convex lens is provided at the radiant energy inlet and a concave lens is provided at the radiant energy outlet. Due to the provision of the lenses and the shape of the walls of the reflective element, the radiant energy incident at the radiant energy inlet within a predetermined angle of acceptance is emitted from the radiant energy outlet exclusively within an acute exit angle. In another embodiment, the radiant energy device may include two interconnected hyperbolically shaped reflective elements with a respective convex lens being provided at each aperture of the device.

  1. Nonimaging radiant energy device

    DOEpatents

    Winston, Roland; Ning, Xiaohui

    1996-01-01

    A nonimaging radiant energy device may include a hyperbolically shaped reflective element with a radiant energy inlet and a radiant energy outlet. A convex lens is provided at the radiant energy inlet and a concave lens is provided at the radiant energy outlet. Due to the provision of the lenses and the shape of the walls of the reflective element, the radiant energy incident at the radiant energy inlet within a predetermined angle of acceptance is emitted from the radiant energy outlet exclusively within an acute exit angle. In another embodiment, the radiant energy device may include two interconnected hyperbolically shaped reflective elements with a respective convex lens being provided at each aperture of the device.

  2. Nonaqueous Electrical Storage Device

    DOEpatents

    McEwen, Alan B.; Evans, David A.; Blakley, Thomas J.; Goldman, Jay L.

    1999-10-26

    An electrochemical capacitor is disclosed that features two, separated, high surface area carbon cloth electrodes sandwiched between two current collectors fabricated of a conductive polymer having a flow temperature greater than 130.degree. C., the perimeter of the electrochemical capacitor being sealed with a high temperature gasket to form a single cell device. The gasket material is a thermoplastic stable at temperatures greater than 100.degree. C., preferably a polyester or a polyurethane, and having a reflow temperature above 130.degree. C. but below the softening temperature of the current collector material. The capacitor packaging has good mechanical integrity over a wide temperature range, contributes little to the device equivalent series resistance (ESR), and is stable at high potentials. In addition, the packaging is designed to be easily manufacturable by assembly line methods. The individual cells can be stacked in parallel or series configuration to reach the desired device voltage and capacitance.

  3. Silicon Carbide Electronic Devices

    NASA Technical Reports Server (NTRS)

    Neudeck, P. G.

    2001-01-01

    The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is briefly surveyed. SiC-based electronic devices and circuits are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot function. Projected performance benefits of SiC electronics are briefly illustrated for several applications. However, most of these operational benefits of SiC have yet to be realized in actual systems, primarily owing to the fact that the growth techniques of SiC crystals are relatively immature and device fabrication technologies are not yet sufficiently developed to the degree required for widespread, reliable commercial use. Key crystal growth and device fabrication issues that limit the performance and capability of high-temperature and/or high-power SiC electronics are identified. The electrical and material quality differences between emerging SiC and mature silicon electronics technology are highlighted.

  4. Laser device and method

    SciTech Connect

    Myers, J. D.

    1985-06-25

    A simplified, relatively inexpensive laser device, wherein the laser elements are fixed in a body exoskeleton of electrical insulating material having a low coefficient of thermal expansion. The preferred embodiment includes a shotgun type laser filter having parallel bores which receive the laser flashlamp and laser rod in fixed relation in a body chamber. The reflector surrounds the laser filter and retains the filter within the body chamber. In the preferred method of this invention, several controlled lasing pulses are generated with each illumination pulse of the flashlamp, substantially increasing the efficiency of the laser device. The number of pulses is generally controlled by increasing the voltage to the flashlamp. The rapid multiple lasing pulses generate an elongated plasma in a fluid medium, such as the vitreous fluid body of an eye which makes the laser device extemely efficient for treating glaucoma and other medical treatments.

  5. ALS insertion devices

    NASA Astrophysics Data System (ADS)

    Hoyer, E.; Chin, J.; Halbach, K.; Hassenzahl, W. V.; Humphries, D.; Kincaid, B.; Lancaster, H.; Plate, D.

    1991-08-01

    The Advanced Light Source (ALS), the first US third generation synchrotron radiation source, is currently under construction at the Lawrence Berkeley Laboratory. The low-emittance, 1.5 GeV electron storage ring and the insertion devices are specifically designed to produce high brightness beams in the UV to soft X-Ray range. The planned initial complement of insertion devices includes four 4.6 m long undulators, with period lengths of 3.9 cm, 5.0 cm (2) and 8.0 cm, and a 2.9 m long wiggler of 16 cm period length. Undulator design is well advanced and fabrication has begun on the 5.0 cm and 8.0 cm period length undulators. This paper discusses ALS insertion device requirements; general design philosophy; and design of the magnetic structure, support structure/drive systems, control system and vacuum system.

  6. Biochip scanner device

    DOEpatents

    Perov, Alexander; Belgovskiy, Alexander I.; Mirzabekov, Andrei D.

    2001-01-01

    A biochip scanner device used to detect and acquire fluorescence signal data from biological microchips or biochips and method of use are provided. The biochip scanner device includes a laser for emitting a laser beam. A modulator, such as an optical chopper modulates the laser beam. A scanning head receives the modulated laser beam and a scanning mechanics coupled to the scanning head moves the scanning head relative to the biochip. An optical fiber delivers the modulated laser beam to the scanning head. The scanning head collects the fluorescence light from the biochip, launches it into the same optical fiber, which delivers the fluorescence into a photodetector, such as a photodiode. The biochip scanner device is used in a row scanning method to scan selected rows of the biochip with the laser beam size matching the size of the immobilization site.

  7. Graphene field emission devices

    SciTech Connect

    Kumar, S. Raghavan, S.; Duesberg, G. S.; Pratap, R.

    2014-09-08

    Graphene field emission devices are fabricated using a scalable process. The field enhancement factors, determined from the Fowler-Nordheim plots, are within few hundreds and match the theoretical predictions. The devices show high emission current density of ∼10 nA μm{sup −1} at modest voltages of tens of volts. The emission is stable with time and repeatable over long term, whereas the noise in the emission current is comparable to that from individual carbon nanotubes emitting under similar conditions. We demonstrate a power law dependence of emission current on pressure which can be utilized for sensing. The excellent characteristics and relative ease of making the devices promise their great potential for sensing and electronic applications.

  8. Pendulum detector testing device

    DOEpatents

    Gonsalves, J.M.

    1997-09-30

    A detector testing device is described which provides consistent, cost-effective, repeatable results. The testing device is primarily constructed of PVC plastic and other non-metallic materials. Sensitivity of a walk-through detector system can be checked by: (1) providing a standard test object simulating the mass, size and material content of a weapon or other contraband, (2) suspending the test object in successive positions, such as head, waist and ankle levels, simulating where the contraband might be concealed on a person walking through the detector system; and (3) swinging the suspended object through each of the positions, while operating the detector system and observing its response. The test object is retained in a holder in which the orientation of the test device or target can be readily changed, to properly complete the testing requirements. 5 figs.

  9. Pendulum detector testing device

    DOEpatents

    Gonsalves, John M.

    1997-01-01

    A detector testing device which provides consistent, cost-effective, repeatable results. The testing device is primarily constructed of PVC plastic and other non-metallic materials. Sensitivity of a walk-through detector system can be checked by: 1) providing a standard test object simulating the mass, size and material content of a weapon or other contraband, 2) suspending the test object in successive positions, such as head, waist and ankle levels, simulating where the contraband might be concealed on a person walking through the detector system; and 3) swinging the suspended object through each of the positions, while operating the detector system and observing its response. The test object is retained in a holder in which the orientation of the test device or target can be readily changed, to properly complete the testing requirements.

  10. Future devices and directions.

    PubMed

    Clark, R E; Zafirelis, Z

    2000-01-01

    This article summarizes the status of left ventricular assist devices currently in the stages of bench testing, animal experiments, and pilot clinical trials. The major design features and estimate of costs for 17 devices are described under 3 major categories of indications for use: destination therapy, bridge to transplant, and bridge to recovery. A sleeved piston pump located in the aorta and a unique, magnetically suspended centrifugal pump are described in the destination therapy section. Eight centrifugal and 4 axial flow devices are listed in the bridge to transplant category, and an external cup and a very low-cost centrifugal pump with a left atrium-to-aorta circuit are described in the bridge to recovery section. The key design features of the future, which will be required for success in both the clinical and marketplace arenas, will be simplicity, safety, low-power requirements, and low cost.

  11. REACTOR CONTROL DEVICE

    DOEpatents

    Graham, R.H.

    1962-09-01

    A wholly mechanical compact control device is designed for automatically rendering the core of a fission reactor subcritical in response to core temperatures in excess of the design operating temperature limit. The control device comprises an expansible bellows interposed between the base of a channel in a reactor core and the inner end of a fuel cylinder therein which is normally resiliently urged inwardly. The bellows contains a working fluid which undergoes a liquid to vapor phase change at a temperature substantially equal to the design temperature limit. Hence, the bellows abruptiy expands at this limiting temperature to force the fuel cylinder outward and render the core subcritical. The control device is particularly applicable to aircraft propulsion reactor service. (AEC)

  12. Ion manipulation device

    SciTech Connect

    Anderson, Gordon A; Smith, Richard D; Ibrahim, Yehia M; Baker, Erin M

    2014-09-16

    An ion manipulation method and device is disclosed. The device includes a pair of substantially parallel surfaces. An array of inner electrodes is contained within, and extends substantially along the length of, each parallel surface. The device includes a first outer array of electrodes and a second outer array of electrodes. Each outer array of electrodes is positioned on either side of the inner electrodes, and is contained within and extends substantially along the length of each parallel surface. A DC voltage is applied to the first and second outer array of electrodes. A RF voltage, with a superimposed electric field, is applied to the inner electrodes by applying the DC voltages to each electrode. Ions either move between the parallel surfaces within an ion confinement area or along paths in the direction of the electric field, or can be trapped in the ion confinement area.

  13. Regenerative combustion device

    DOEpatents

    West, Phillip B.

    2004-03-16

    A regenerative combustion device having a combustion zone, and chemicals contained within the combustion zone, such as water, having a first equilibrium state, and a second combustible state. Means for transforming the chemicals from the first equilibrium state to the second combustible state, such as electrodes, are disposed within the chemicals. An igniter, such as a spark plug or similar device, is disposed within the combustion zone for igniting combustion of the chemicals in the second combustible state. The combustion products are contained within the combustion zone, and the chemicals are selected such that the combustion products naturally chemically revert into the chemicals in the first equilibrium state following combustion. The combustion device may thus be repeatedly reused, requiring only a brief wait after each ignition to allow the regeneration of combustible gasses within the head space.

  14. Evaporative Cooling Membrane Device

    NASA Technical Reports Server (NTRS)

    Lomax, Curtis (Inventor); Moskito, John (Inventor)

    1999-01-01

    An evaporative cooling membrane device is disclosed having a flat or pleated plate housing with an enclosed bottom and an exposed top that is covered with at least one sheet of hydrophobic porous material having a thin thickness so as to serve as a membrane. The hydrophobic porous material has pores with predetermined dimensions so as to resist any fluid in its liquid state from passing therethrough but to allow passage of the fluid in its vapor state, thereby, causing the evaporation of the fluid and the cooling of the remaining fluid. The fluid has a predetermined flow rate. The evaporative cooling membrane device has a channel which is sized in cooperation with the predetermined flow rate of the fluid so as to produce laminar flow therein. The evaporative cooling membrane device provides for the convenient control of the evaporation rates of the circulating fluid by adjusting the flow rates of the laminar flowing fluid.

  15. Percutaneous connector device

    NASA Technical Reports Server (NTRS)

    Parsons, W. E. (Inventor)

    1976-01-01

    A device is reported for facilitating the passage of electrical signals from an external source through the skin of a patient to internal portions of the body such as muscles and nerves. The connector device includes a bio-compatible shell having an enlarged disk shaped portion for being implanted below the skin of the patient. The shell has a first and second electrically conductive post carried therein upon which a plug can be readily connected and disconnected. A modified form of the invention utilizes a unipolar connector that is adapted to be plugged into a shell implanted below the skin of a patient. Both of the connector devices are designed to be separated when a predetermined force is applied. This prevents excessive force from being applied to the implanted bio-compatible shell.

  16. Therapeutic Devices for Epilepsy

    PubMed Central

    Fisher, Robert S.

    2011-01-01

    Therapeutic devices provide new options for treating drug-resistant epilepsy. These devices act by a variety of mechanisms to modulate neuronal activity. Only vagus nerve stimulation, which continues to develop new technology, is approved for use in the United States. Deep brain stimulation (DBS) of anterior thalamus for partial epilepsy recently was approved in Europe and several other countries. Responsive neurostimulation, which delivers stimuli to one or two seizure foci in response to a detected seizure, recently completed a successful multicenter trial. Several other trials of brain stimulation are in planning or underway. Transcutaneous magnetic stimulation (TMS) may provide a noninvasive method to stimulate cortex. Controlled studies of TMS split on efficacy, and may depend on whether a seizure focus is near a possible region for stimulation. Seizure detection devices in the form of “shake” detectors via portable accelerometers can provide notification of an ongoing tonic-clonic seizure, or peace of mind in the absence of notification. Prediction of seizures from various aspects of EEG is in early stages. Prediction appears to be possible in a subpopulation of people with refractory seizures and a clinical trial of an implantable prediction device is underway. Cooling of neocortex or hippocampus reversibly can attenuate epileptiform EEG activity and seizures, but engineering problems remain in its implementation. Optogenetics is a new technique that can control excitability of specific populations of neurons with light. Inhibition of epileptiform activity has been demonstrated in hippocampal slices, but use in humans will require more work. In general, devices provide useful palliation for otherwise uncontrollable seizures, but with a different risk profile than with most drugs. Optimizing the place of devices in therapy for epilepsy will require further development and clinical experience. PMID:22367987

  17. ROTATING PLASMA DEVICE

    DOEpatents

    Boyer, K.; Hammel, J.E.; Longmire, C.L.; Nagle, D.E.; Ribe, F.L.; Tuck, J.L.

    1961-10-24

    ABS>A method and device are described for obtaining fusion reactions. The basic concept is that of using crossed electric and magnetic fields to induce a plasma rotation in which the ionized particles follow a circumferential drift orbit on wldch a cyclotron mode of motion is superimposed, the net result being a cycloidal motion about the axis of symmetry. The discharge tube has a radial electric field and a longitudinal magnetic field. Mirror machine geometry is utilized. The device avoids reliance on the pinch effect and its associated instability problems. (AEC)

  18. Phononic crystal devices

    DOEpatents

    El-Kady, Ihab F [Albuquerque, NM; Olsson, Roy H [Albuquerque, NM

    2012-01-10

    Phononic crystals that have the ability to modify and control the thermal black body phonon distribution and the phonon component of heat transport in a solid. In particular, the thermal conductivity and heat capacity can be modified by altering the phonon density of states in a phononic crystal. The present invention is directed to phononic crystal devices and materials such as radio frequency (RF) tags powered from ambient heat, dielectrics with extremely low thermal conductivity, thermoelectric materials with a higher ratio of electrical-to-thermal conductivity, materials with phononically engineered heat capacity, phononic crystal waveguides that enable accelerated cooling, and a variety of low temperature application devices.

  19. Rooting an Android Device

    DTIC Science & Technology

    2015-09-01

    this feature on an Android device, go to “Settings” and then “About Phone ” or “About tablet”. Find “Build Number”, then tab on the “Build Number” 7...flag, which should not affect phone operation. Ensure that the phone or tablet is on and active while the rooting process is underway, and monitor...the Android device and host computer for progress of the script to determine whether the installation succeeded or failed. Do not unplug the phone

  20. Contaminate Control Device

    NASA Technical Reports Server (NTRS)

    Howe, Robert H. (Inventor); Flynn, Kenneth P. (Inventor); Stapleton, Thomas J. (Inventor)

    2014-01-01

    A contaminate control device for filtering contaminates from a gas such as air is provided. The device includes a housing having a first inlet and a first outlet. An axial flow filter is fluidly coupled between the first inlet and the first outlet, the axial flow filter has a second inlet and a second outlet. A second filter disposed about the axial flow filter and is fluidly coupled between the first inlet and the first outlet, the second filter having a third inlet on an inner diameter and a third outlet disposed on an outer diameter. A flow restrictor is fluidly coupled between the second inlet and the first inlet.

  1. Dielectrophoretic columnar focusing device

    DOEpatents

    James, Conrad D.; Galambos, Paul C.; Derzon, Mark S.

    2010-05-11

    A dielectrophoretic columnar focusing device uses interdigitated microelectrodes to provide a spatially non-uniform electric field in a fluid that generates a dipole within particles in the fluid. The electric field causes the particles to either be attracted to or repelled from regions where the electric field gradient is large, depending on whether the particles are more or less polarizable than the fluid. The particles can thereby be forced into well defined stable paths along the interdigitated microelectrodes. The device can be used for flow cytometry, particle control, and other process applications, including cell counting or other types of particle counting, and for separations in material control.

  2. REMOTE CONTROLLED SWITCHING DEVICE

    DOEpatents

    Hobbs, J.C.

    1959-02-01

    An electrical switching device which can be remotely controlled and in which one or more switches may be accurately operated at predetermined times or with predetermined intervening time intervals is described. The switching device consists essentially of a deck, a post projecting from the deck at right angles thereto, cam means mounted for rotation around said posts and a switch connected to said deck and actuated by said cam means. Means is provided for rotating the cam means at a constant speed and the switching apparatus is enclosed in a sealed container with external adjusting means and electrical connection elements.

  3. Asphaltene based photovoltaic devices

    DOEpatents

    Chianelli, Russell R.; Castillo, Karina; Gupta, Vipin; Qudah, Ali M.; Torres, Brenda; Abujnah, Rajib E.

    2016-03-22

    Photovoltaic devices and methods of making the same, are disclosed herein. The cell comprises a photovoltaic device that comprises a first electrically conductive layer comprising a photo-sensitized electrode; at least one photoelectrochemical layer comprising metal-oxide particles, an electrolyte solution comprising at least one asphaltene fraction, wherein the metal-oxide particles are optionally dispersed in a surfactant; and a second electrically conductive layer comprising a counter-electrode, wherein the second electrically conductive layer comprises one or more conductive elements comprising carbon, graphite, soot, carbon allotropes or any combinations thereof.

  4. EXPERIMENTAL ANIMAL WATERING DEVICE

    DOEpatents

    Finkel, M.P.

    1964-04-01

    A device for watering experimental animals confined in a battery of individual plastic enclosures is described. It consists of a rectangular plastic enclosure having a plurality of fluid-tight compartments, each with a drinking hole near the bottom and a filling hole on the top. The enclosure is immersed in water until filled, its drinking holes sealed with a strip of tape, and it is then placed in the battery. The tape sealing prevents the flow of water from the device, but permits animals to drink by licking the drinking holes. (AEC)

  5. Microfluidic Cell Culture Device

    NASA Technical Reports Server (NTRS)

    Takayama, Shuichi (Inventor); Cabrera, Lourdes Marcella (Inventor); Heo, Yun Seok (Inventor); Smith, Gary Daniel (Inventor)

    2014-01-01

    Microfluidic devices for cell culturing and methods for using the same are disclosed. One device includes a substrate and membrane. The substrate includes a reservoir in fluid communication with a passage. A bio-compatible fluid may be added to the reservoir and passage. The reservoir is configured to receive and retain at least a portion of a cell mass. The membrane acts as a barrier to evaporation of the bio-compatible fluid from the passage. A cover fluid may be added to cover the bio-compatible fluid to prevent evaporation of the bio-compatible fluid.

  6. Precision alignment device

    DOEpatents

    Jones, N.E.

    1988-03-10

    Apparatus for providing automatic alignment of beam devices having an associated structure for directing, collimating, focusing, reflecting, or otherwise modifying the main beam. A reference laser is attached to the structure enclosing the main beam producing apparatus and produces a reference beam substantially parallel to the main beam. Detector modules containing optical switching devices and optical detectors are positioned in the path of the reference beam and are effective to produce an electrical output indicative of the alignment of the main beam. This electrical output drives servomotor operated adjustment screws to adjust the position of elements of the structure associated with the main beam to maintain alignment of the main beam. 5 figs.

  7. Precision alignment device

    DOEpatents

    Jones, Nelson E.

    1990-01-01

    Apparatus for providing automatic alignment of beam devices having an associated structure for directing, collimating, focusing, reflecting, or otherwise modifying the main beam. A reference laser is attached to the structure enclosing the main beam producing apparatus and produces a reference beam substantially parallel to the main beam. Detector modules containing optical switching devices and optical detectors are positioned in the path of the reference beam and are effective to produce an electrical output indicative of the alignment of the main beam. This electrical output drives servomotor operated adjustment screws to adjust the position of elements of the structure associated with the main beam to maintain alignment of the main beam.

  8. Precision positioning device

    DOEpatents

    McInroy, John E.

    2005-01-18

    A precision positioning device is provided. The precision positioning device comprises a precision measuring/vibration isolation mechanism. A first plate is provided with the precision measuring mean secured to the first plate. A second plate is secured to the first plate. A third plate is secured to the second plate with the first plate being positioned between the second plate and the third plate. A fourth plate is secured to the third plate with the second plate being positioned between the third plate and the fourth plate. An adjusting mechanism for adjusting the position of the first plate, the second plate, the third plate, and the fourth plate relative to each other.

  9. Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors

    NASA Astrophysics Data System (ADS)

    Liu, Kuan-Hsien; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Hsieh, Tien-Yu; Chen, Min-Chen; Yeh, Bo-Liang; Chou, Wu-Ching

    2014-03-01

    This study investigates the electrical instability under negative gate bias stress (NGBS) induced by surface hydrolysis effect. Electrical characteristics exhibit instability for amorphous InGaZnO (a-IGZO) Thin Film Transistors (TFTs) under NGBS, in which on-current degradation and current crowding phenomenon can be observed. When the negative gate bias is applied on the TFT, hydrogen ions will dissociate from ZnO-H bonds and the dissociated hydrogen ions will cause electrical instability under NGBS. The ISE-Technology Computer Aided Design simulation tool and moisture partial pressure modulation measurement are utilized to clarify the anomalous degradation behavior.

  10. Superlattice optical device

    DOEpatents

    Biefeld, R.M.; Fritz, I.J.; Gourley, P.L.; Osbourn, G.C.

    A semiconductor optical device which includes a superlattice having direct transitions between conduction band and valence band states with the same wave vector, the superlattice being formed from a plurality of alternating layers of two or more different materials, at least the material with the smallest bandgap being an indirect bandgap material.

  11. Solar Innovator | Alta Devices

    ScienceCinema

    Mattos, Laila; Le, Minh

    2016-07-12

    Selected to participate in the Energy Department's SunShot Initiative, Alta Devices produces solar cells that convert sunlight into electricity at world record-breaking levels of efficiency. Through its innovative solar technology Alta is helping bring down the cost of solar. Learn more about the Energy Department's efforts to advance solar technology at energy.gov/solar .

  12. LOADING AND UNLOADING DEVICE

    DOEpatents

    Treshow, M.

    1960-08-16

    A device for loading and unloading fuel rods into and from a reactor tank through an access hole includes parallel links carrying a gripper. These links enable the gripper to go through the access hole and then to be moved laterally from the axis of the access hole to the various locations of the fuel rods in the reactor tank.

  13. Cascaded thermoacoustic devices

    DOEpatents

    Swift, Gregory W.; Backhaus, Scott N.; Gardner, David L.

    2003-12-09

    A thermoacoustic device is formed with a resonator system defining at least one region of high specific acoustic impedance in an acoustic wave within the resonator system. A plurality of thermoacoustic units are cascaded together within the region of high specific acoustic impedance, where at least one of the thermoacoustic units is a regenerator unit.

  14. RADIO RANGING DEVICE

    DOEpatents

    Nieset, R.T.

    1961-05-16

    A radio ranging device is described. It utilizes a super regenerative detector-oscillator in which echoes of transmitted pulses are received in proper phase to reduce noise energy at a selected range and also at multiples of the selected range.

  15. RADIO RANGING DEVICE

    DOEpatents

    Bogle, R.W.

    1960-11-22

    A description is given of a super-regenerative oscillator ranging device provided with radiating and receiving means and being capable of indicating the occurrence of that distance between itself and a reflecting object which so phases the received echo of energy of a preceding emitted oscillation that the intervals between oscillations become uniform.

  16. Solid-State Devices.

    ERIC Educational Resources Information Center

    Sutliff, Ronald D.; And Others

    This self-study course is designed to familiarize Marine Corps enlisted personnel with the principles of solid-state devices and their functions. The course contains four study units. Each study unit begins with a general objective, which is a statement of what the student should learn from the unit. The study units are divided into numbered work…

  17. Color identification testing device

    NASA Technical Reports Server (NTRS)

    Brawner, E. L.; Martin, R.; Pate, W.

    1970-01-01

    Testing device, which determines ability of a technician to identify color-coded electric wires, is superior to standard color blindness tests. It tests speed of wire selection, detects partial color blindness, allows rapid testing, and may be administered by a color blind person.

  18. Complex Materials and Devices

    DTIC Science & Technology

    2013-03-07

    Disruptive Basic Research Areas” – Metamaterials and Plasmonics – Quantum Information Science – Cognitive Neuroscience – Nanoscience and...Sayir, Fuller) Bio-Sensing of Magnetic Fields (Larkin, Bradshaw, Curcic, DeLong 2D Materials & Devices Beyond Graphene (Hwang, Pomrenke, Harrison

  19. Condensate removal device

    DOEpatents

    Maddox, James W.; Berger, David D.

    1984-01-01

    A condensate removal device is disclosed which incorporates a strainer in unit with an orifice. The strainer is cylindrical with its longitudinal axis transverse to that of the vapor conduit in which it is mounted. The orifice is positioned inside the strainer proximate the end which is remoter from the vapor conduit.

  20. Solar Innovator | Alta Devices

    SciTech Connect

    Mattos, Laila; Le, Minh

    2012-01-01

    Selected to participate in the Energy Department's SunShot Initiative, Alta Devices produces solar cells that convert sunlight into electricity at world record-breaking levels of efficiency. Through its innovative solar technology Alta is helping bring down the cost of solar. Learn more about the Energy Department's efforts to advance solar technology at energy.gov/solar .

  1. Electron beam device

    DOEpatents

    Beckner, E.H.; Clauser, M.J.

    1975-08-12

    This patent pertains to an electron beam device in which a hollow target is symmetrically irradiated by a high energy, pulsed electron beam about its periphery and wherein the outer portion of the target has a thickness slightly greater than required to absorb the electron beam pulse energy. (auth)

  2. Discourse Devices in Telugu

    ERIC Educational Resources Information Center

    Rani, A. Usha

    2010-01-01

    The aim of this paper is to discuss some of the productive discourse devices and markers noted in 50 spoken narratives elicited from Telugu native speakers. Since most of them are college students and residents of Hyderabad, they are also exposed to English as well as Hindi-Urdu (Dakkhini). After presenting certain salient features of Telugu…

  3. Road-Cleaning Device

    ERIC Educational Resources Information Center

    Roman, Harry T.

    2014-01-01

    Roadways are literally soaked with petrochemical byproducts, oils, gasoline, and other volatile substances that eventually run off into sewers and end up in rivers, waterways, and other undesirable places. Can the roads be cleaned of these wastes, with their proper disposal? Can vehicles, robots, or other devices be designed that could be driven…

  4. Multiple gap photovoltaic device

    DOEpatents

    Dalal, Vikram L.

    1981-01-01

    A multiple gap photovoltaic device having a transparent electrical contact adjacent a first cell which in turn is adjacent a second cell on an opaque electrical contact, includes utilizing an amorphous semiconductor as the first cell and a crystalline semiconductor as the second cell.

  5. Device Oriented Project Controller

    SciTech Connect

    Dalesio, Leo; Kraimer, Martin

    2013-11-20

    This proposal is directed at the issue of developing control systems for very large HEP projects. A de-facto standard in accelerator control is the Experimental Physics and Industrial Control System (EPICS), which has been applied successfully to many physics projects. EPICS is a channel based system that requires that each channel of each device be configured and controlled. In Phase I, the feasibility of a device oriented extension to the distributed channel database was demonstrated by prototyping a device aware version of an EPICS I/O controller that functions with the current version of the channel access communication protocol. Extensions have been made to the grammar to define the database. Only a multi-stage position controller with limit switches was developed in the demonstration, but the grammar should support a full range of functional record types. In phase II, a full set of record types will be developed to support all existing record types, a set of process control functions for closed loop control, and support for experimental beam line control. A tool to configure these records will be developed. A communication protocol will be developed or extensions will be made to Channel Access to support introspection of components of a device. Performance bench marks will be made on both communication protocol and the database. After these records and performance tests are under way, a second of the grammar will be undertaken.

  6. Superlattice optical device

    DOEpatents

    Biefeld, Robert M.; Fritz, Ian J.; Gourley, Paul L.; Osbourn, Gordon C.

    1986-01-01

    A semiconductor optical device which includes a superlattice having direct transitions between conduction band and valence band states with the same wave vector, the superlattice being formed from a plurality of alternating layers of two or more different materials, at least the material with the smallest bandgap being an indirect bandgap material.

  7. ANNULAR IMPACTOR SAMPLING DEVICE

    DOEpatents

    Tait, G.W.C.

    1959-03-31

    A high-rate air sampler capable of sampling alphaemitting particles as small as 0.5 microns is described. The device is a cylindrical shaped cup that fits in front of a suction tube and which has sticky grease coating along its base. Suction forces contaminated air against the periodically monitored particle absorbing grease.

  8. Optical Indoor Positioning System Based on TFT Technology

    PubMed Central

    Gőzse, István

    2015-01-01

    A novel indoor positioning system is presented in the paper. Similarly to the camera-based solutions, it is based on visual detection, but it conceptually differs from the classical approaches. First, the objects are marked by LEDs, and second, a special sensing unit is applied, instead of a camera, to track the motion of the markers. This sensing unit realizes a modified pinhole camera model, where the light-sensing area is fixed and consists of a small number of sensing elements (photodiodes), and it is the hole that can be moved. The markers are tracked by controlling the motion of the hole, such that the light of the LEDs always hits the photodiodes. The proposed concept has several advantages: Apart from its low computational demands, it is insensitive to the disturbing ambient light. Moreover, as every component of the system can be realized by simple and inexpensive elements, the overall cost of the system can be kept low. PMID:26712753

  9. Manufacturing Methods and Engineering for TFT Addressed Display.

    DTIC Science & Technology

    1980-02-20

    precondition E- Beam evaporated sources. 3.6 Typical exercise recipe used in the run initialization i1 task. 3.7 Active layer, lower insulator and...color by using multiple electron beams generated from an area cathode and then formed and digitally addressed by a switching stack. (3) However, for...recipes are described in Section 5.3. For the present, the source preheat implies simply the melt down and clean off the electron beam evaporated

  10. Particle capture device

    DOEpatents

    Jayne, John T.; Worsnop, Douglas R.

    2016-02-23

    In example embodiments, particle collection efficiency in aerosol analyzers and other particle measuring instruments is improved by a particle capture device that employs multiple collisions to decrease momentum of particles until the particles are collected (e.g., vaporized or come to rest). The particle collection device includes an aperture through which a focused particle beam enters. A collection enclosure is coupled to the aperture and has one or more internal surfaces against which particles of the focused beam collide. One or more features are employed in the collection enclosure to promote particles to collide multiple times within the enclosure, and thereby be vaporized or come to rest, rather than escape through the aperture.

  11. Microelectromechanical safe arm device

    DOEpatents

    Roesler, Alexander W [Tijeras, NM

    2012-06-05

    Microelectromechanical (MEM) apparatus and methods for operating, for preventing unintentional detonation of energetic components comprising pyrotechnic and explosive materials, such as air bag deployment systems, munitions and pyrotechnics. The MEM apparatus comprises an interrupting member that can be moved to block (interrupt) or complete (uninterrupt) an explosive train that is part of an energetic component. One or more latching members are provided that engage and prevent the movement of the interrupting member, until the one or more latching members are disengaged from the interrupting member. The MEM apparatus can be utilized as a safe and arm device (SAD) and electronic safe and arm device (ESAD) in preventing unintentional detonations. Methods for operating the MEM apparatus include independently applying drive signals to the actuators coupled to the latching members, and an actuator coupled to the interrupting member.

  12. Microelectromechanical reprogrammable logic device

    NASA Astrophysics Data System (ADS)

    Hafiz, M. A. A.; Kosuru, L.; Younis, M. I.

    2016-03-01

    In modern computing, the Boolean logic operations are set by interconnect schemes between the transistors. As the miniaturization in the component level to enhance the computational power is rapidly approaching physical limits, alternative computing methods are vigorously pursued. One of the desired aspects in the future computing approaches is the provision for hardware reconfigurability at run time to allow enhanced functionality. Here we demonstrate a reprogrammable logic device based on the electrothermal frequency modulation scheme of a single microelectromechanical resonator, capable of performing all the fundamental 2-bit logic functions as well as n-bit logic operations. Logic functions are performed by actively tuning the linear resonance frequency of the resonator operated at room temperature and under modest vacuum conditions, reprogrammable by the a.c.-driving frequency. The device is fabricated using complementary metal oxide semiconductor compatible mass fabrication process, suitable for on-chip integration, and promises an alternative electromechanical computing scheme.

  13. Wire brush fastening device

    DOEpatents

    Meigs, Richard A.

    1995-01-01

    A fastening device is provided which is a variation on the conventional nut and bolt. The bolt has a longitudinal axis and threading helically affixed thereon along the longitudinal axis. A nut having a bore extending therethrough is provided. The bore of the nut has a greater diameter than the diameter of the bolt so the bolt can extend through the bore. An array of wire bristles are affixed within the bore so as to form a brush. The wire bristles extend inwardly from the bore and are constructed and arranged of the correct size, length and stiffness to guide the bolt within the bore and to restrain the bolt within the bore as required. A variety of applications of the wire brush nut are disclosed, including a bolt capture device and a test rig apparatus.

  14. Wire brush fastening device

    DOEpatents

    Meigs, R.A.

    1995-09-19

    A fastening device is provided which is a variation on the conventional nut and bolt. The bolt has a longitudinal axis and threading helically affixed thereon along the longitudinal axis. A nut having a bore extending therethrough is provided. The bore of the nut has a greater diameter than the diameter of the bolt so the bolt can extend through the bore. An array of wire bristles are affixed within the bore so as to form a brush. The wire bristles extend inwardly from the bore and are constructed and arranged of the correct size, length and stiffness to guide the bolt within the bore and to restrain the bolt within the bore as required. A variety of applications of the wire brush nut are disclosed, including a bolt capture device and a test rig apparatus. 13 figs.

  15. Regenerative braking device

    DOEpatents

    Hoppie, Lyle O.

    1982-01-12

    Disclosed are several embodiments of a regenerative braking device for an automotive vehicle. The device includes a plurality of rubber rollers (24, 26) mounted for rotation between an input shaft (14) connectable to the vehicle drivetrain and an output shaft (16) which is drivingly connected to the input shaft by a variable ratio transmission (20). When the transmission ratio is such that the input shaft rotates faster than the output shaft, the rubber rollers are torsionally stressed to accumulate energy, thereby slowing the vehicle. When the transmission ratio is such that the output shaft rotates faster than the input shaft, the rubber rollers are torsionally relaxed to deliver accumulated energy, thereby accelerating or driving the vehicle.

  16. Gas scrubbing device

    SciTech Connect

    Perry, G.A.

    1984-04-03

    An improved scrubbing device suitable for use in modular paint spray booths for extracting particulate matter entrained in a gas stream. The device includes an angularly inclined flood sheet adapted to be flooded with a continuous sheet of liquid and formed with a trough having a plurality of removable venturis disposed in spaced relationship through which the gas stream passes in a manner to effect atomization of the liquid flowing therethrough for scrubbing and extracting the particulate matter in the gas stream. Each venturi can be readily removed for periodic cleaning and service as well as replacement by alternative venturi configurations to modify the scrubbing characteristics thereof consistent with changes in the type and loading of particulate matter in the gas stream thereby achieving continuous optimum operating efficiency.

  17. PRESSURE SENSING DEVICE

    DOEpatents

    Pope, K.E.

    1959-12-15

    This device is primarily useful as a switch which is selectively operable to actuate in response to either absolute or differential predetermined pressures. The device generally comprises a pressure-tight housing divided by a movable impermeable diaphragm into two chambers, a reference pressure chamber and a bulb chamber containing the switching means and otherwise filled with an incompressible non-conducting fluid. The switch means comprises a normally collapsed bulb having an electrically conductive outer surface and a vent tube leading to the housing exterior. The normally collapsed bulb is disposed such that upon its inflation, respensive to air inflow from the vent, two contacts fixed within the bulb chamber are adapted to be electrically shorted by the conducting outer surface of the bulb.

  18. Elastomeric load sharing device

    NASA Technical Reports Server (NTRS)

    Isabelle, Charles J. (Inventor); Kish, Jules G. (Inventor); Stone, Robert A. (Inventor)

    1992-01-01

    An elastomeric load sharing device, interposed in combination between a driven gear and a central drive shaft to facilitate balanced torque distribution in split power transmission systems, includes a cylindrical elastomeric bearing and a plurality of elastomeric bearing pads. The elastomeric bearing and bearing pads comprise one or more layers, each layer including an elastomer having a metal backing strip secured thereto. The elastomeric bearing is configured to have a high radial stiffness and a low torsional stiffness and is operative to radially center the driven gear and to minimize torque transfer through the elastomeric bearing. The bearing pads are configured to have a low radial and torsional stiffness and a high axial stiffness and are operative to compressively transmit torque from the driven gear to the drive shaft. The elastomeric load sharing device has spring rates that compensate for mechanical deviations in the gear train assembly to provide balanced torque distribution between complementary load paths of split power transmission systems.

  19. Microelectromechanical reprogrammable logic device

    PubMed Central

    Hafiz, M. A. A.; Kosuru, L.; Younis, M. I.

    2016-01-01

    In modern computing, the Boolean logic operations are set by interconnect schemes between the transistors. As the miniaturization in the component level to enhance the computational power is rapidly approaching physical limits, alternative computing methods are vigorously pursued. One of the desired aspects in the future computing approaches is the provision for hardware reconfigurability at run time to allow enhanced functionality. Here we demonstrate a reprogrammable logic device based on the electrothermal frequency modulation scheme of a single microelectromechanical resonator, capable of performing all the fundamental 2-bit logic functions as well as n-bit logic operations. Logic functions are performed by actively tuning the linear resonance frequency of the resonator operated at room temperature and under modest vacuum conditions, reprogrammable by the a.c.-driving frequency. The device is fabricated using complementary metal oxide semiconductor compatible mass fabrication process, suitable for on-chip integration, and promises an alternative electromechanical computing scheme. PMID:27021295

  20. Quick stop device

    DOEpatents

    Hipwell, Roger L.; Hazelton, Andrew J.

    1996-01-01

    A quick stop device for abruptly interrupting the cutting of a workpiece by a cutter is disclosed. The quick stop device employs an outer housing connected to an inner workpiece holder by at least one shear pin. The outer housing includes an appropriate shank designed to be received in the spindle of a machine, such as a machine tool. A cutter, such as a drill bit, is mounted in a stationary position and the workpiece, mounted to the workpiece holder, is rotated during engagement with the cutter. A trigger system includes at least one spring loaded punch disposed for movement into engagement with the workpiece holder to abruptly stop rotation of the workpiece holder. This action shears the shear pin and permits continued rotation of the spindle and outer housing without substantially disturbing the chip root formed during cutting.

  1. Tire deflation device

    DOEpatents

    Barker, Stacey G [Idaho Falls, ID

    2010-01-05

    A tire deflation device includes (1) a component having a plurality of bores, (2) a plurality of spikes removably insertable into the plurality of bores and (3) a keeper within each among the plurality of bores, the keeper being configured to contact a sidewall surface of a spike among the plurality of spikes and to exert force upon the sidewall surface. In an embodiment, the tire deflation device includes (a) a component including a bore in a material, the bore including a receiving region, a sidewall surface and a base surface, (b) a channel extending from the sidewall surface into the material, (c) a keeper having a first section housed within the channel and a second section which extends past the sidewall surface into the receiving region, and (d) a spike removably insertable into the bore.

  2. Anti-gravity device

    NASA Technical Reports Server (NTRS)

    Palsingh, S. (Inventor)

    1975-01-01

    An educational toy useful in demonstrating fundamental concepts regarding the laws of gravity is described. The device comprises a sphere 10 of radius r resting on top of sphere 12 of radius R. The center of gravity of sphere 10 is displaced from its geometrical center by distance D. The dimensions are so related that D((R+r)/r) is greater than r. With the center of gravity of sphere 10 lying on a vertical line, the device is in equilibrium. When sphere 10 is rolled on the surface of sphere 12 it will return to its equilibrium position upon release. This creates an illusion that sphere 10 is defying the laws of gravity. In reality, due to the above noted relationship of D, R, and r, the center of gravity of sphere 10 rises from its equilibrium position as it rolls a short distance up or down the surface of sphere 12.

  3. Light modulating device

    DOEpatents

    Rauh, R. David; Goldner, Ronald B.

    1989-01-01

    In a device for transmitting light, means for controlling the transmissivity of the device, including a ceramic, reversibly electrochromic, crystalline element having a highly reflective state when injected with electrons and charge compensating ions and a highly transmissive state when the electrons and ions are removed, the crystalline element being characterized as having a reflectivity of at least 50% in the reflective state and not greater than 10% in the transmissive state, and means for modulating the crystalline element between the reflective and transmissive states by injecting ions into the crystalline element in response to an applied electrical current of a first polarity and removing the ions in response to an applied electrical current of a second polarity.

  4. Light modulating device

    DOEpatents

    Rauh, R.D.; Goldner, R.B.

    1989-12-26

    In a device for transmitting light, means for controlling the transmissivity of the device, including a ceramic, reversibly electrochromic, crystalline element having a highly reflective state when injected with electrons and charge compensating ions and a highly transmissive state when the electrons and ions are removed, the crystalline element being characterized as having a reflectivity of at least 50% in the reflective state and not greater than 10% in the transmissive state, and means for modulating the crystalline element between the reflective and transmissive states by injecting ions into the crystalline element in response to an applied electrical current of a first polarity and removing the ions in response to an applied electrical current of a second polarity are disclosed. 1 fig.

  5. Micro-Organ Devices

    NASA Technical Reports Server (NTRS)

    Gonda, Steven R.; Leslie, Julia; Chang, Robert C.; Starly, Binil; Sun, Wei; Culbertson, Christopher; Holtorf, Heidi

    2009-01-01

    Micro-organ devices (MODs) are being developed to satisfy an emerging need for small, lightweight, reproducible, biological-experimentati on apparatuses that are amenable to automated operation and that imp ose minimal demands for resources (principally, power and fluids). I n simplest terms, a MOD is a microfluidic device containing a variety of microstructures and assemblies of cells, all designed to mimic a complex in vivo microenvironment by replicating one or more in vivo micro-organ structures, the architectures and composition of the extr acellular matrices in the organs of interest, and the in vivo fluid flows. In addition to microscopic flow channels, a MOD contains one or more micro-organ wells containing cells residing in microscopic e xtracellular matrices and/or scaffolds, the shapes and compositions o f which enable replication of the corresponding in vivo cell assembl ies and flows.

  6. Nuclear reactor safety device

    DOEpatents

    Hutter, Ernest

    1986-01-01

    A safety device is disclosed for use in a nuclear reactor for axially repositioning a control rod with respect to the reactor core in the event of an upward thermal excursion. Such safety device comprises a laminated helical ribbon configured as a tube-like helical coil having contiguous helical turns with slidably abutting edges. The helical coil is disclosed as a portion of a drive member connected axially to the control rod. The laminated ribbon is formed of outer and inner laminae. The material of the outer lamina has a greater thermal coefficient of expansion than the material of the inner lamina. In the event of an upward thermal excursion, the laminated helical coil curls inwardly to a smaller diameter. Such inward curling causes the total length of the helical coil to increase by a substantial increment, so that the control rod is axially repositioned by a corresponding amount to reduce the power output of the reactor.

  7. Stacked organic photosensitive devices

    DOEpatents

    Forrest, Stephen; Xue, Jiangeng; Uchida, Soichi; Rand, Barry P.

    2007-03-27

    A device is provided having a first electrode, a second electrode, a first photoactive region having a characteristic absorption wavelength .lamda..sub.1 and a second photoactive region having a characteristic absorption wavelength .lamda..sub.2. The photoactive regions are disposed between the first and second electrodes, and further positioned on the same side of a reflective layer, such that the first photoactive region is closer to the reflective layer than the second photoactive region. The materials comprising the photoactive regions may be selected such that .lamda..sub.1 is at least about 10% different from .lamda..sub.2. The device may further comprise an exciton blocking layer disposed adjacent to and in direct contact with the organic acceptor material of each photoactive region, wherein the LUMO of each exciton blocking layer other than that closest to the cathode is not more than about 0.3 eV greater than the LUMO of the acceptor material.

  8. Dielectrokinetic chromatography devices

    DOEpatents

    Chirica, Gabriela S; Fiechtner, Gregory J; Singh, Anup K

    2014-12-16

    Disclosed herein are methods and devices for dielectrokinetic chromatography. As disclosed, the devices comprise microchannels having at least one perturber which produces a non-uniformity in a field spanning the width of the microchannel. The interaction of the field non-uniformity with a perturber produces a secondary flow which competes with a primary flow. By decreasing the size of the perturber the secondary flow becomes significant for particles/analytes in the nanometer-size range. Depending on the nature of a particle/analyte present in the fluid and its interaction with the primary flow and the secondary flow, the analyte may be retained or redirected. The composition of the primary flow can be varied to affect the magnitude of primary and/or secondary flows on the particles/analytes and thereby separate and concentrate it from other particles/analytes.

  9. Draft air deflecting device

    SciTech Connect

    Riley, J.E.

    1982-05-18

    A draft air deflecting device is mountable proximate to a window contained in a firebox and serves as a conduit which directs draft air across the inner surface of the window prior to its supporting combustion of the fuel in the firebox. In this respect , the draft air deflecting device is formed as a box which communicates with draft air holes located in the firebox and which includes a forwardly extending lip serving to define a nozzle for both increasing the velocity and directing the incoming draft air across the firebox window. The incoming draft air is thus utilized to cool and to prevent soot, creosote and other particulates from accumulating on the window.

  10. Organic photosensitive devices

    DOEpatents

    Peumans, Peter; Forrest, Stephen R.

    2013-01-22

    A photoactive device is provided. The device includes a first electrode, a second electrode, and a photoactive region disposed between and electrically connected to the first and second electrodes. The photoactive region further includes an organic donor layer and an organic acceptor layer that form a donor-acceptor heterojunction. The mobility of holes in the organic donor region and the mobility of electrons in the organic acceptor region are different by a factor of at least 100, and more preferably a factor of at least 1000. At least one of the mobility of holes in the organic donor region and the mobility of electrons in the organic acceptor region is greater than 0.001 cm.sup.2/V-sec, and more preferably greater than 1 cm.sup.2/V-sec. The heterojunction may be of various types, including a planar heterojunction, a bulk heterojunction, a mixed heterojunction, and a hybrid planar-mixed heterojunction.

  11. GASEOUS DISCHARGE DEVICE

    DOEpatents

    Gow, J.D.

    1961-01-10

    An extremely compact two-terminal gaseous discharge device is described that is capable of producing neutrons in copious quantities, relatively high energy ions, intense x rays, and the like. Principal novelty resides in the provision of a crossed electric-magnetic field region in the discharge envelope that traps electrons and accelerates them to very high energies to provide an intense ionizing medium adjacent the anode of the device for ionizing gas therein with extremely high efficiency. In addition, the crossed-field trapping region holds the electrons close to the anode whereby the acceleration of ions to the cathode is not materially effected by the electron sheath and the ions assume substantially the full energy of the anodecathode potential drop. (auth)

  12. Inertial energy storage device

    DOEpatents

    Knight, Jr., Charles E.; Kelly, James J.; Pollard, Roy E.

    1978-01-01

    The inertial energy storage device of the present invention comprises a composite ring formed of circumferentially wound resin-impregnated filament material, a flanged hollow metal hub concentrically disposed in the ring, and a plurality of discrete filament bandsets coupling the hub to the ring. Each bandset is formed of a pair of parallel bands affixed to the hub in a spaced apart relationship with the axis of rotation of the hub being disposed between the bands and with each band being in the configuration of a hoop extending about the ring along a chordal plane thereof. The bandsets are disposed in an angular relationship with one another so as to encircle the ring at spaced-apart circumferential locations while being disposed in an overlapping relationship on the flanges of the hub. The energy storage device of the present invention has the capability of substantial energy storage due to the relationship of the filament bands to the ring and the flanged hub.

  13. Picosecond optoelectronic devices

    SciTech Connect

    Lee, C.L.

    1984-01-01

    Ever since the invention of picosecond lasers, scientists and electronic engineers have been dreaming of inventing electronic devices that can record in real time the physical and electronic events that take place on picosecond time scales. With the exception of the expensive streak camera, this dream has been largely unfullfilled. Today, a real-time oscilloscope with picosecond time resolution is still not available. To fill the need for even better time resolution, researchers have turned to optical pulses and thus a hybrid technology has emerged-picosecond optoelectronics. This technology, based on bulk photoconductors, has had a slow start. However, because of the simplicity, scaleability, and jitterfree nature of the devices, the technology has recently experienced a rapid growth. This volume reviews the major developments in the field of picosecond optoelectronics over the past decade.

  14. Portable biochip scanner device

    DOEpatents

    Perov, Alexander; Sharonov, Alexei; Mirzabekov, Andrei D.

    2002-01-01

    A portable biochip scanner device used to detect and acquire fluorescence signal data from biological microchips (biochips) is provided. The portable biochip scanner device employs a laser for emitting an excitation beam. An optical fiber delivers the laser beam to a portable biochip scanner. A lens collimates the laser beam, the collimated laser beam is deflected by a dichroic mirror and focused by an objective lens onto a biochip. The fluorescence light from the biochip is collected and collimated by the objective lens. The fluorescence light is delivered to a photomultiplier tube (PMT) via an emission filter and a focusing lens. The focusing lens focuses the fluorescence light into a pinhole. A signal output of the PMT is processed and displayed.

  15. GAS DISCHARGE DEVICES

    DOEpatents

    Jefferson, S.

    1958-11-11

    An apparatus utilized in introducing tritium gas into envelope of a gas discharge device for the purpose f maintaining the discharge path in ionized condition is described. ln addition to the cathode and anode, the ischarge device contains a zirconium or tantalum ilament arranged for external excitation and a metallic seed containing tritium, and also arranged to have a current passed through it. Initially, the zirconium or tantalum filament is vaporized to deposit its material adjacent the main discharge region. Then the tritium gas is released and, due to its affinity for the first released material, it deposits in the region of the main discharge where it is most effective in maintaining the discharge path in an ionized condition.

  16. Deflectometry using portable devices

    NASA Astrophysics Data System (ADS)

    Butel, Guillaume P.; Smith, Greg A.; Burge, James H.

    2015-02-01

    Deflectometry is a powerful metrology technique that uses off-the-shelf equipment to achieve nanometer-level accuracy surface measurements. However, there is no portable device to quickly measure eyeglasses, lenses, or mirrors. We present an entirely portable new deflectometry technique that runs on any Android™ smartphone with a front-facing camera. Our technique overcomes some specific issues of portable devices like screen nonlinearity and automatic gain control. We demonstrate our application by measuring an amateur telescope mirror and simulating a measurement of the faulty Hubble Space Telescope primary mirror. Our technique can, in less than 1 min, measure surface errors with accuracy up to 50 nm RMS, simply using a smartphone.

  17. Multiband selection device

    NASA Technical Reports Server (NTRS)

    Richard, H. L.; Mika, A. M.; Davis, R. O.

    1984-01-01

    Current science projections for future earth-imaging instruments indicate the need for as many as 25 spectral bands, with bandwidths as narrow as 20 nanometers. The desire for a multiplicity of bands has led researchers to study various spectrally dispersive instrument designs as a means of providing the desired future capability. These instrument designs, however, are costly, complex, and of high technical risk. This paper describes a 'multiband selection device' containing several spectral filters that can be placed at the exit faces of a broadband multiport beam splitter and thereby provide a multiplicity of spectral bands with a high degree of spatial coregistration while utilizing state-of-the-art linear array detectors. Fabrication of the multiband selection device has been successfully accomplished, and the design and test results are described.

  18. Cable shield connecting device

    DOEpatents

    Silva, Frank A.

    1979-01-01

    A cable shield connecting device for installation on a high voltage cable of the type having a metallic shield, the device including a relatively conformable, looped metal bar for placement around a bared portion of the metallic shield to extend circumferentially around a major portion of the circumference of the metallic shield while being spaced radially therefrom, a plurality of relatively flexible metallic fingers affixed to the bar, projecting from the bar in an axial direction and spaced circumferentially along the bar, each finger being attached to the metallic shield at a portion located remote from the bar to make electrical contact with the metallic shield, and a connecting conductor integral with the bar.

  19. Urine collection device

    NASA Technical Reports Server (NTRS)

    Michaud, R. B. (Inventor)

    1981-01-01

    A urine collection device for females is described. It is comprised of a collection element defining a urine collection chamber and an inlet opening into the chamber and is adapted to be disposed in surrounding relation to the urethral opening of the user. A drainage conduit is connected to the collection element in communication with the chamber whereby the chamber and conduit together comprise a urine flow pathway for carrying urine generally away from the inlet. A first body of wicking material is mounted adjacent the collection element and extends at least partially into the flow pathway. The device preferably also comprise a vaginal insert element including a seal portion for preventing the entry of urine into the vagina.

  20. Pyrotechnic Device Reliability

    DTIC Science & Technology

    1991-03-01

    40 Table 10. TEST PROBABILITIES ( B ) ............................... 49 Table 11. RELAIBILITIES AND 95 % LOWER CONFIDENCE BOUNDS (B) 50 Table 12...0.9375000 0.9500000 49 Table 11. RELAIBILITIES AND 95 % LOWER CONFIDENCE BOUNDS ( B) FAILURE A FAILURE 95 % LCB VECTOR VECTOR (0000) 1.0000000 (0000...LP4 MEAN EFFECT OF MANUFACTURER TEST. * TETHA TWO WAY INTERACTION TERMS * RHMLE RELAIBILITY OF DEVICE * MPPPP CELL FREQUENCY WITH RESPECT TO TESTS

  1. Nanoelectronic Device Simulator Nanodev

    NASA Astrophysics Data System (ADS)

    Novik, E. G.; Sheremet, I. V.; Ivashkevich, S. S.; Abramov, I. I.

    In this paper the models for simulation of single-electron (Coulomb blockade) and resonant tunneling structures are described. To calculate various parameters and characteristics (current-voltage characteristics, parameters of operation and others) of these structures algorithms and programs have been developed. The simulator NANODEV consists of two modeling units for Coulomb blockade and for resonant tunneling devices. Some calculation results are also present. The simulator was developed for PC computers.

  2. Ultrafast Magnetoelectronic Devices

    DTIC Science & Technology

    2012-03-22

    enhanced linewidth in Ni|Co multilayer films with PMA. The FMR linewidth depends linearly on frequency for perpendicular applied fields and increases...microwave spin-currents. 4. We also characterized transition metal multilayer and alloy thin films of interest in spin-transfer torque devices using...of Co/Pd/Co/Ni multilayers with perpendicular anisotropy irradiated with helium ions, Journal of Applied Physics, (02 2011): 0. doi: 10.1063

  3. Fiber optic monitoring device

    DOEpatents

    Samborsky, James K.

    1993-01-01

    A device for the purpose of monitoring light transmissions in optical fibers comprises a fiber optic tap that optically diverts a fraction of a transmitted optical signal without disrupting the integrity of the signal. The diverted signal is carried, preferably by the fiber optic tap, to a lens or lens system that disperses the light over a solid angle that facilitates viewing. The dispersed light indicates whether or not the monitored optical fiber or system of optical fibers is currently transmitting optical information.

  4. Electronics Devices and Materials

    DTIC Science & Technology

    2008-03-17

    SOL, and advanced solar cells . The systems include subsystems for space systems. Effects include single event effects, total dose changes (especially...Perform particle and gamma irradiations at various facilities on various kinds of advanced devices such as solar cells , integrated circuits detectors...calculate radiation damage effects on solar cells based on NRL’s algorithm and MISSE6 Materials Testing I4 I I CURRENT PROGRESS FOR EACH TASK

  5. Temperature measuring device

    DOEpatents

    Lauf, Robert J.; Bible, Don W.; Sohns, Carl W.

    1999-01-01

    Systems and methods are described for a wireless instrumented silicon wafer that can measure temperatures at various points and transmit those temperature readings to an external receiver. The device has particular utility in the processing of semiconductor wafers, where it can be used to map thermal uniformity on hot plates, cold plates, spin bowl chucks, etc. without the inconvenience of wires or the inevitable thermal perturbations attendant with them.

  6. Hybrid electroluminescent devices

    DOEpatents

    Shiang, Joseph John; Duggal, Anil Raj; Michael, Joseph Darryl

    2010-08-03

    A hybrid electroluminescent (EL) device comprises at least one inorganic diode element and at least one organic EL element that are electrically connected in series. The absolute value of the breakdown voltage of the inorganic diode element is greater than the absolute value of the maximum reverse bias voltage across the series. The inorganic diode element can be a power diode, a Schottky barrier diode, or a light-emitting diode.

  7. Quantum Device Development

    DTIC Science & Technology

    1988-10-25

    Wavepacket Calculations .. .. ....... ... 22 b. Quantum Transport Theory .. .. .... ....... 29 c. Scattering-State Calculations. .. .... ..... 33 8. Device...much smaller than the depletion layer widths and diffusion lengths that provide the basis for conventional transistor function . A step can be taken in...outside the quantum well) the electron density is simply given by the Fermi distribution function . The quantized states in the quantum well are found by

  8. Thermal Remote Anemometer Device

    NASA Technical Reports Server (NTRS)

    Heyman, Joseph S.; Heath, D. Michele; Winfree, William P.; Miller, William E.; Welch, Christopher S.

    1988-01-01

    Thermal Remote Anemometer Device developed for remote, noncontacting, passive measurement of thermal properties of sample. Model heated locally by scanning laser beam and cooled by wind in tunnel. Thermal image of model analyzed to deduce pattern of airflow around model. For materials applications, system used for evaluation of thin films and determination of thermal diffusivity and adhesive-layer contact. For medical applications, measures perfusion through skin to characterize blood flow and used to determine viabilities of grafts and to characterize tissues.

  9. Liquid level sensing device

    DOEpatents

    Tokarz, Richard D.

    1983-01-01

    A liquid level sensing device comprising a load cell supporting a column or stack of segments freely resting on one another. The density of each element is substantially identical to that of the surrounding liquid. The elements are freely guided within a surrounding tube. As each element is exposed above the liquid level, its weight will be impressed through the column to the load cell, thereby providing a signal at the load cell directly proportional to the liquid level elevation.

  10. Biomolecular detection device

    DOEpatents

    Huo, Qisheng; Liu, Jun

    2008-10-21

    A device for detecting and measuring the concentration of biomolecules in solution, utilizing a conducting electrode in contact with a solution containing target biomolecules, with a film with controllable pore size distribution characteristics applied to at least one surface of the conducting electrode. The film is functionalized with probe molecules that chemically interact with the target biomolecules at the film surface, blocking indicator molecules present in solution from diffusing from the solution to the electrode, thereby changing the electrochemical response of the electrode.

  11. Residual gas analysis device

    DOEpatents

    Thornberg, Steven M [Peralta, NM

    2012-07-31

    A system is provided for testing the hermeticity of a package, such as a microelectromechanical systems package containing a sealed gas volume, with a sampling device that has the capability to isolate the package and breach the gas seal connected to a pulse valve that can controllably transmit small volumes down to 2 nanoliters to a gas chamber for analysis using gas chromatography/mass spectroscopy diagnostics.

  12. Pediatric ventricular assist devices

    PubMed Central

    Burki, Sarah; Zafar, Farhan; Morales, David Luis Simon

    2015-01-01

    The domain of pediatric ventricular assist device (VAD) has recently gained considerable attention. Despite the fact that, historically, the practice of pediatric mechanical circulatory support (MCS) has lagged behind that of adult patients, this gap between the two groups is narrowing. Currently, the Berlin EXCOR VAD is the only pediatric-specific durable VAD approved by the U.S Food and Drug Administration (FDA). The prospective Berlin Heart trial demonstrated a successful outcome, either bridge to transplantation (BTT), or in rare instances, bridge to recovery, in approximately 90% of children. Also noted during the trial was, however, a high incidence of adverse events such as embolic stroke, bleeding and infection. This has incentivized some pediatric centers to utilize adult implantable continuous-flow devices, for instance the HeartMate II and HeartWare HVAD, in children. As a result of this paradigm shift, the outlook of pediatric VAD support has dramatically changed: Treatment options previously unavailable to children, including outpatient management and even destination therapy, have now been becoming a reality. The sustained demand for continued device miniaturization and technological refinements is anticipated to extend the range of options available to children—HeartMate 3 and HeartWare MVAD are two examples of next generation VADs with potential pediatric application, both of which are presently undergoing clinical trials. A pediatric-specific continuous-flow device is also on the horizon: the redesigned Infant Jarvik VAD (Jarvik 2015) is undergoing pre-clinical testing, with a randomized clinical trial anticipated to follow thereafter. The era of pediatric VADs has begun. In this article, we discuss several important aspects of contemporary VAD therapy, with a particular focus on challenges unique to the pediatric population. PMID:26793341

  13. Temperature measuring device

    SciTech Connect

    Lauf, R.J.; Bible, D.W.; Sohns, C.W.

    1999-10-19

    Systems and methods are described for a wireless instrumented silicon wafer that can measure temperatures at various points and transmit those temperature readings to an external receiver. The device has particular utility in the processing of semiconductor wafers, where it can be used to map thermal uniformity on hot plates, cold plates, spin bowl chucks, etc. without the inconvenience of wires or the inevitable thermal perturbations attendant with them.

  14. Haptic device in endoscopy.

    PubMed

    Sadovnichy, Victor; Gabidullina, Rozaliya; Sokolov, Mikhail; Galatenko, Vladimir; Budanov, Vladimir; Nakashidze, Eldar

    2014-01-01

    Access to organs and tissues is limited during endoscopy. Information about mechanical properties of tissues received during an operation is a key factor for deciding the scale of surgery and further treatment strategy. A new device developed at Lomonosov Moscow State University determines the visco-elastic properties of tissues and presents them in a digital form as a visual image and a tactile sense for the surgeon. This data lets users define pathological change of tissues and if necessary change treatment policy.

  15. New Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Balestra, F.

    2008-11-01

    A review of recently emerging semiconductor devices for nanoelectronic applications is given. For the end of the international technology roadmap for semiconductors, very innovative materials, technologies and nanodevice architectures will be needed. Silicon on insulator-based devices seem to be the best candidates for the ultimate integration of integrated circuits on silicon. The flexibility of the silicon on insulator-based structure and the possibility to realize new device architectures allow to obtain optimum electrical properties for low power and high performance circuits. These transistors are also very interesting for high frequency and memory applications. The performance and physical mechanisms are addressed in single- and multi-gate thin film Si, SiGe and Ge metal-oxide-semiconductor field-effect-transistors. The impact of tensile or compressive uniaxial and biaxial strains in the channel, of high k materials and metal gates as well as metallic Schottky source-drain architectures are discussed. Finally, the interest of advanced beyond-CMOS (complementary MOS) nanodevices for long term applications, based on nanowires, carbon electronics or small slope switch structures are presented.

  16. Plasma jet ignition device

    DOEpatents

    McIlwain, Michael E.; Grant, Jonathan F.; Golenko, Zsolt; Wittstein, Alan D.

    1985-01-15

    An ignition device of the plasma jet type is disclosed. The device has a cylindrical cavity formed in insulating material with an electrode at one end. The other end of the cylindrical cavity is closed by a metal plate with a small orifice in the center which plate serves as a second electrode. An arc jumping between the first electrode and the orifice plate causes the formation of a highly-ionized plasma in the cavity which is ejected through the orifice into the engine cylinder area to ignite the main fuel mixture. Two improvements are disclosed to enhance the operation of the device and the length of the plasma plume. One improvement is a metal hydride ring which is inserted in the cavity next to the first electrode. During operation, the high temperature in the cavity and the highly excited nature of the plasma breaks down the metal hydride, liberating hydrogen which acts as an additional fuel to help plasma formation. A second improvement consists of a cavity insert containing a plurality of spaced, metal rings. The rings act as secondary spark gap electrodes reducing the voltage needed to maintain the initial arc in the cavity.

  17. Thermophotovoltaic energy conversion device

    DOEpatents

    Charache, G.W.; Baldasaro, P.F.; Egley, J.L.

    1998-05-19

    A thermophotovoltaic device and a method for making the thermophotovoltaic device are disclosed. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used. 1 fig.

  18. Packaging of solid state devices

    DOEpatents

    Glidden, Steven C.; Sanders, Howard D.

    2006-01-03

    A package for one or more solid state devices in a single module that allows for operation at high voltage, high current, or both high voltage and high current. Low thermal resistance between the solid state devices and an exterior of the package and matched coefficient of thermal expansion between the solid state devices and the materials used in packaging enables high power operation. The solid state devices are soldered between two layers of ceramic with metal traces that interconnect the devices and external contacts. This approach provides a simple method for assembling and encapsulating high power solid state devices.

  19. Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.

    PubMed

    Jin, Sung Hun; Kang, Seung-Kyun; Cho, In-Tak; Han, Sang Youn; Chung, Ha Uk; Lee, Dong Joon; Shin, Jongmin; Baek, Geun Woo; Kim, Tae-il; Lee, Jong-Ho; Rogers, John A

    2015-04-22

    This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants.

  20. [International progress of unique device identification for medical devices].

    PubMed

    Yang, Wanjuan; Li, Jun; Li, Jingli

    2014-09-01

    Unique Device Identification (UDI) is a hot spot research area in the medical device administration. It comes a breakthrough from International Medical Device Regulators Forum (IMDRF) and government implementation recently. The article reviewed the advancement of IMDRF UDI program, discussed the framework for UDI system, analyzed the implementation of UDI in other countries, put forward some suggestions on the development of medical device coding system in our country.

  1. Advanced Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Shur, Michael S.; Maki, Paul A.; Kolodzey, James

    2007-06-01

    I. Wide band gap devices. Wide-Bandgap Semiconductor devices for automotive applications / M. Sugimoto ... [et al.]. A GaN on SiC HFET device technology for wireless infrastructure applications / B. Green ... [et al.]. Drift velocity limitation in GaN HEMT channels / A. Matulionis. Simulations of field-plated and recessed gate gallium nitride-based heterojunction field-effect transistors / V. O. Turin, M. S. Shur and D. B. Veksler. Low temperature electroluminescence of green and deep green GaInN/GaN light emitting diodes / Y. Li ... [et al.]. Spatial spectral analysis in high brightness GaInN/GaN light emitting diodes / T. Detchprohm ... [et al.]. Self-induced surface texturing of Al2O3 by means of inductively coupled plasma reactive ion etching in Cl2 chemistry / P. Batoni ... [et al.]. Field and termionic field transport in aluminium gallium arsenide heterojunction barriers / D. V. Morgan and A. Porch. Electrical characteristics and carrier lifetime measurements in high voltage 4H-SiC PiN diodes / P. A. Losee ... [et al.]. Geometry and short channel effects on enhancement-mode n-Channel GaN MOSFETs on p and n- GaN/sapphire substrates / W. Huang, T. Khan and T. P. Chow. 4H-SiC Vertical RESURF Schottky Rectifiers and MOSFETs / Y. Wang, P. A. Losee and T. P. Chow. Present status and future Directions of SiGe HBT technology / M. H. Khater ... [et al.]Optical properties of GaInN/GaN multi-quantum Wells structure and light emitting diode grown by metalorganic chemical vapor phase epitaxy / J. Senawiratne ... [et al.]. Electrical comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic contacts on undoped GaN HEMTs structure with AlN interlayer / Y. Sun and L. F. Eastman. Above 2 A/mm drain current density of GaN HEMTs grown on sapphire / F. Medjdoub ... [et al.]. Focused thermal beam direct patterning on InGaN during molecular beam epitaxy / X. Chen, W. J. Schaff and L. F. Eastman -- II. Terahertz and millimeter wave devices. Temperature-dependent microwave performance of

  2. Intrauterine device developments.

    PubMed

    1984-01-01

    Results of recent IUD research are presented. The largest study of postpartum IUD insertion to date, a multicenter comparative trail involving 3791 women at 15 sites in 13 countries, has shown that the practice is safe and effective if the IUD is correctly placed. Modifications in design of the device are unnecessary to reduce expulsions. In 1977, Family Health International (FHI) began developing IUDs that would have clinically acceptable expulsion rates following postpartum insertion. By adding chromic catgut suture material to the upper arms of the TCu andLippes Loop, FHI developed the Delta T and Delta Loop. Many of the centers involved in studies of postpartum IUD insertion were large urban maternity hospitals in developing countries with heavy caseloads of 10,000-30,000 deliveries/year. Results of the trials and of a 19-center evaluation of the timing of postpartum insertion support several conclusions: 1) insertion should take place within 10 minutes of placental expulsion; 2) if insertion is done within 10 minutes of delivery, there is no increased risk of infection or uterine perforation; 3) the type of device inserted is less important than the method of insertion; expulsion rates at different clinics ranged from 6-37/1000 women at 6 monts, and the fundal placement of the device is crucial; and 4) expulsions are higher for postpartum than interval insertions but not so high as to make the offer of an IUD immediately postpartum unacceptable. Since the incidence of pain or bleeding associated with IUD use is related to their size, attempts to decrease the side effects have centered on development of smaller copper devices. 1 such device, the copper i, consists of a straight stem with small crossarms in an 'x' configuration disigned to anchor the IUD in place. A copper wire around the stem of the device exposes 200 sq millimeters of cooper. A study of 98 women who used the Copper i showed an accidental pregnancy rate of 3.2 at 6 months and 9.0 at 12 months

  3. Nonimaging radiant energy direction device

    DOEpatents

    Winston, Roland

    1980-01-01

    A raidant energy nonimaging light direction device is provided. The device includes an energy transducer and a reflective wall whose contour is particularly determined with respect to the geometrical vector flux of a field associated with the transducer.

  4. Photoemission-based microelectronic devices

    PubMed Central

    Forati, Ebrahim; Dill, Tyler J.; Tao, Andrea R.; Sievenpiper, Dan

    2016-01-01

    The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas or vacuum channel may scale their speed, wavelength and power beyond what is available today. However, liberating electrons into gas/vacuum in a practical microelectronic device is quite challenging. It often requires heating, applying high voltages, or using lasers with short wavelengths or high powers. Here, we show that the interaction between an engineered resonant surface and a low-power infrared laser can cause enough photoemission via electron tunnelling to implement feasible microelectronic devices such as transistors, switches and modulators. The proposed photoemission-based devices benefit from the advantages of gas-plasma/vacuum electronic devices while preserving the integrability of semiconductor-based devices. PMID:27811946

  5. Photoemission-based microelectronic devices

    NASA Astrophysics Data System (ADS)

    Forati, Ebrahim; Dill, Tyler J.; Tao, Andrea R.; Sievenpiper, Dan

    2016-11-01

    The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas or vacuum channel may scale their speed, wavelength and power beyond what is available today. However, liberating electrons into gas/vacuum in a practical microelectronic device is quite challenging. It often requires heating, applying high voltages, or using lasers with short wavelengths or high powers. Here, we show that the interaction between an engineered resonant surface and a low-power infrared laser can cause enough photoemission via electron tunnelling to implement feasible microelectronic devices such as transistors, switches and modulators. The proposed photoemission-based devices benefit from the advantages of gas-plasma/vacuum electronic devices while preserving the integrability of semiconductor-based devices.

  6. Single-cavity SLED device

    SciTech Connect

    Lippmann, B.A.

    1984-09-01

    The conventional SLED device used at SLAC requires two cavities. However, the same effect can be obtained with a single cavity; the theory and operation of the device is the same, only the hardware is changed. The single-cavity device is described here.

  7. Hybrid free electron laser devices

    SciTech Connect

    Asgekar, Vivek; Dattoli, G.

    2007-03-15

    We consider hybrid free electron laser devices consisting of Cerenkov and undulator sections. We will show that they can in principle be used as segmented devices and also show the possibility of exploiting Cerenkov devices for the generation of nonlinear harmonic coherent power. We discuss both oscillator and amplifier schemes.

  8. Nanochanneled Device and Related Methods

    NASA Technical Reports Server (NTRS)

    Ferrari, Mauro (Inventor); Liu, Xuewu (Inventor); Grattoni, Alessandro (Inventor); Fine, Daniel (Inventor); Goodall, Randy (Inventor); Hosali, Sharath (Inventor); Medema, Ryan (Inventor); Hudson, Lee (Inventor)

    2013-01-01

    A nanochannel delivery device and method of manufacturing and use. The nanochannel delivery device comprises an inlet, an outlet, and a nanochannel. The nanochannel may be oriented parallel to the primary plane of the nanochannel delivery device. The inlet and outlet may be in direct fluid communication with the nanochannel.

  9. Medical devices and patient safety.

    PubMed

    Mattox, Elizabeth

    2012-08-01

    Errors related to health care devices are not well understood. Nurses in intensive care and progressive care environments can benefit from understanding manufacturer-related error and device-use error, the principles of human factors engineering, and the steps that can be taken to reduce risk of errors related to health care devices.

  10. Superconducting quantum-interference devices

    NASA Technical Reports Server (NTRS)

    Peters, P. N.; Holdeman, L. B.

    1975-01-01

    Published document discusses devices which are based on weak-link Josephson elements that join superconductors. Links can take numerous forms, and circuitry utilizing links can perform many varied functions with unprecedented sensitivity. Theoretical review of Josephson's junctions include tunneling junctions, point contact devices, microbridges, and proximity-effect devices.

  11. [Design of SCM inoculation device].

    PubMed

    Qian, Mingli; Xie, Haiyuan

    2014-01-01

    The first step of bacilli culture is inoculation bacteria on culture medium. Designing a device to increase efficiency of inoculation is significative. The new device is controlled by SCM. The stepper motor can drive the culture medium rotating, accelerating, decelerating, overturn and suspending. The device is high practicability and efficient, let inoculation easy for operator.

  12. Controllable Mirror Devices

    NASA Technical Reports Server (NTRS)

    1992-01-01

    A deformable Mirror Device (DMD) is a type of spatial light modulator in which mirrors fabricated monolithically on a silicon chip are deformed, or tilted, under electronic control to change the direction of light that falls upon the mirror. NASA and Texas Instruments (TI) have worked to develop this technology, which has subsequently been commercialized by TI. Initial application is the DMD 2000 Travel Information Printer for high speed, high volume printing of airline tickets and boarding passes. Other possible applications range from real-time object tracking to advanced industrial machine vision systems.

  13. COUNTERROTATING PLASMA DEVICE

    DOEpatents

    Halbach, K.; Baker, W.R.; Veron, D.

    1963-07-01

    An ion-electron plasma device having a conductive, cylindrical casing provided with an axially directed magneticmirror-type field is described. An axially aligned tubular electrode is disposed at each end of the casing with oppositely directed radial electric fields provided between each electrode and the casing. Simultaneous pulses of gas, injected from the inner end of each of the electrodes, become ionized and oppositely rotating plasma bodies are formed. The magnetic mirrors repel the plasma bodies and cause them to collide in the region between the mirrors. The opposite directions of rotation of the plasma bodies cause very high currents to flow therebetween and consequent heating occurs. (AEC)

  14. Fiber optic monitoring device

    DOEpatents

    Samborsky, J.K.

    1993-10-05

    A device for the purpose of monitoring light transmissions in optical fibers comprises a fiber optic tap that optically diverts a fraction of a transmitted optical signal without disrupting the integrity of the signal. The diverted signal is carried, preferably by the fiber optic tap, to a lens or lens system that disperses the light over a solid angle that facilitates viewing. The dispersed light indicates whether or not the monitored optical fiber or system of optical fibers is currently transmitting optical information. 4 figures.

  15. Silicon active photonic devices

    NASA Astrophysics Data System (ADS)

    Dimitropoulos, Dimitrios

    Active photonic devices utilizing the optical nonlinearities of silicon have emerged in the last 5 years and the effort for commercial photonic devices in the material that has been the workhorse of electronics has been building up since. This dissertation presents the theory for some of these devices. We are concerned herein with CW lasers, amplifiers and wavelength converters that are based on the Raman effect. There have already been cursory experimental demonstrations of these devices and some of their limitations are already apparent. Most of the limitations observed are because of the appearance of effects that are competing with stimulated Raman scattering. Under the high optical powers that are necessary for the Raman effect (tens to hundrends of mW's) the process of optical two-photon (TPA) absorption occurs. The absorption of optical power that it causes itself is weak but in the process electrons and holes are generated which can further absorb light through the free-carrier absorption effect (FCA). The effective "lifetime" that these carriers have determines the magnitude of the FCA loss. We present a model for the carrier lifetime in Silicon-On-Insulator (SOI) waveguides and numerical simulations to understand how this critical parameter varies and how it can be controlled. A p-i-n junction built along SOI waveguides can help achieve lifetime of the order of 20--100 ps but the price one has to pay is on-chip electrical power consumption on the order of 100's of mWs. We model CW Raman lasers and we find that the carrier lifetime reduces the output power. If the carrier lifetime exceeds a certain "critical" value optical losses become overwhelming and lasing is impossible. As we show, in amplifiers, the nonlinear loss does not only result in diminished gain, but also in a higher noise figure. Finally the effect of Coherent anti-Stokes Raman scattering (CARS) is examined. The effect is important because with a pump frequency at 1434nm coherent power

  16. Fuel saving device

    SciTech Connect

    Imbert, J. C.

    1984-01-10

    The present invention relates to a fuel saving device adaptable to all types of carburetors, petrol engines and domestic or industrial burners, constituted by a solenoid generating a magnetic field which has an influence on the air-fuel mixture. Said solenoid has a red copper coil, has its axis oriented in parallel to the axis of the engine, and, periodically, in a first pre-determined direction, during the moon phase which goes from the full moon to the new moon, and in a second, opposite, direction, during the moon phase going from the new moon to the full moon. The invention finds an application in motor engine of low consumption.

  17. Advanced Resistive Exercise Device

    NASA Technical Reports Server (NTRS)

    Raboin, Jasen; Niebuhr, Jason; Cruz, Santana; Lamoreaux, chris

    2007-01-01

    The advanced resistive exercise device (ARED), now at the prototype stage of development, is a versatile machine that can be used to perform different customized exercises for which, heretofore, it has been necessary to use different machines. Conceived as a means of helping astronauts and others to maintain muscle and bone strength and endurance in low-gravity environments, the ARED could also prove advantageous in terrestrial settings (e.g., health clubs and military training facilities) in which many users are exercising simultaneously and there is heavy demand for use of exercise machines.

  18. Detached rock evaluation device

    DOEpatents

    Hanson, David R.

    1986-01-01

    A rock detachment evaluation device (10) having an energy transducer unit 1) for sensing vibrations imparted to a subject rock (172) for converting the sensed vibrations into electrical signals, a low band pass filter unit (12) for receiving the electrical signal and transmitting only a low frequency segment thereof, a high band pass filter unit (13) for receiving the electrical signals and for transmitting only a high frequency segment thereof, a comparison unit (14) for receiving the low frequency and high frequency signals and for determining the difference in power between the signals, and a display unit (16) for displaying indicia of the difference, which provides a quantitative measure of rock detachment.

  19. Resistive Exercise Device

    NASA Technical Reports Server (NTRS)

    Smith, Damon C. (Inventor)

    2005-01-01

    An exercise device 10 is particularly well suited for use in low gravity environments, and includes a frame 12 with plurality of resistance elements 30,82 supported in parallel on the frame. A load transfer member 20 is moveable relative to the frame for transferring the applied force to the free end of each captured resistance element. Load selection template 14 is removably secured both to the load transfer member, and a plurality of capture mechanisms engage the free end of corresponding resistance elements. The force applying mechanism 53 may be a handle, harness or other user interface for applying a force to move the load transfer member.

  20. Microwave semiconductor devices

    NASA Astrophysics Data System (ADS)

    Sitch, J. E.

    1985-03-01

    The state of the art of microwave semiconductor design is reviewed, with emphasis on developments of the past 10-12 years. Consideration is given to: varistor diodes; varactor diodes; and transit time negative diodes. The design principles of bipolar and unipolar transistors are discussed, with reference to power FETs, traveling-wave FETs, and camel or planar-doped barrier transistors. Recent innovations in the field of fabrication technology are also considered, including: crystal growth; doping; and packaging. Several schematic drawings and photographs of the different devices are provided.

  1. Micro environmental sensing device

    DOEpatents

    Polosky, Marc A.; Lukens, Laurance L.

    2006-05-02

    A microelectromechanical (MEM) acceleration switch is disclosed which includes a proof mass flexibly connected to a substrate, with the proof mass being moveable in a direction substantially perpendicular to the substrate in response to a sensed acceleration. An electrode on the proof mass contacts one or more electrodes located below the proof mass to provide a switch closure in response to the sensed acceleration. Electrical latching of the switch in the closed position is possible with an optional latching electrode. The MEM acceleration switch, which has applications for use as an environmental sensing device, can be fabricated using micromachining.

  2. Nanotube resonator devices

    DOEpatents

    Jensen, Kenneth J; Zettl, Alexander K; Weldon, Jeffrey A

    2014-05-06

    A fully-functional radio receiver fabricated from a single nanotube is being disclosed. Simultaneously, a single nanotube can perform the functions of all major components of a radio: antenna, tunable band-pass filter, amplifier, and demodulator. A DC voltage source, as supplied by a battery, can power the radio. Using carrier waves in the commercially relevant 40-400 MHz range and both frequency and amplitude modulation techniques, successful music and voice reception has been demonstrated. Also disclosed are a radio transmitter and a mass sensor using a nanotube resonator device.

  3. Drop foot corrective device

    NASA Technical Reports Server (NTRS)

    Deis, B. C. (Inventor)

    1986-01-01

    A light weight, economical device to alleviate a plurality of difficulties encountered in walking by a victim suffering from a drop foot condition is discussed. A legband girdles the leg below the knee and above the calf providing an anchor point for the upper end of a ligament having its lower end attached to a toe of a shoe or a toe on the foot. The ligament is of such length that the foot is supported thereby and retained in a normal position during walking.

  4. Nanoimprinted photonic devices

    NASA Astrophysics Data System (ADS)

    Thomas, Jayan; Gangopadhyay, Palash; Munoz, Ramon; Peyghambarian, N.

    2010-08-01

    We introduce a simple yet efficient approach for nanoimprinting sub-50 nm dimensions starting from a low molecular weight plasticized polymer melt. This technique enabled us to successfully imprint versatile large area nanopatterns with high degrees of fidelity and rational control over the residual layers. The key advantage is its reliability in printing versatile nanostructures and nanophotonic devices doped with organic dyes owing to its low processing temperature. Since nanopatterns can be fabricated easily at low costs, this approach offers an easy pathway for achieving excellent nanoimprinted structures for a variety of photonic, electronic and biological research and applications.

  5. Graphene device and method of using graphene device

    DOEpatents

    Bouchiat, Vincent; Girit, Caglar; Kessler, Brian; Zettl, Alexander K.

    2015-08-11

    An embodiment of a graphene device includes a layered structure, first and second electrodes, and a dopant island. The layered structure includes a conductive layer, an insulating layer, and a graphene layer. The electrodes are coupled to the graphene layer. The dopant island is coupled to an exposed surface of the graphene layer between the electrodes. An embodiment of a method of using a graphene device includes providing the graphene device. A voltage is applied to the conductive layer of the graphene device. Another embodiment of a method of using a graphene device includes providing the graphene device without the dopant island. A dopant island is placed on an exposed surface of the graphene layer between the electrodes. A voltage is applied to the conductive layer of the graphene device. A response of the dopant island to the voltage is observed.

  6. Heterostructure terahertz devices.

    PubMed

    Ryzhii, Victor

    2008-08-19

    The terahertz (THz) range of frequencies is borderline between microwave electronics and photonics. It corresponds to the frequency bands of molecular and lattice vibrations in gases, fluids, and solids. The importance of the THz range is in part due to numerous potential and emerging applications which include imaging and characterization, detection of hazardous substances, environmental monitoring, radio astronomy, covert inter-satellite communications, as well as biological and medical applications. During the last decades marked progress has been achieved in the development, fabrication, and practical implementation of THz devices and systems. This is primarily owing to the utilization of gaseous and free electron lasers and frequency converters using nonlinear optical phenomena as sources of THz radiation. However, such devices and hence the systems based on them are fairly cumbersome. This continuously stimulates an extensive search for new compact and efficient THz sources based on semiconductor heterostructures. Despite tremendous efforts lasting several decades, the so-called THz gap unbridged by semiconductor heterostructure electron and optoelectron devices still exists providing appropriate levels of power of the generated THz radiation. The invention and realization of quantum cascade lasers made of multiple quantum-well heterostructures already resulted in the partial solution of the problem in question, namely, in the successful coverage of the high-frequency portion of the THz gap (2-3 THz and higher). Further advancement to lower frequencies meets, perhaps, fundamental difficulties. All this necessitates further extensive theoretical and experimental studies of more or less traditional and novel semiconductor heterostructures as a basis for sources of THz radiation. This special issue includes 11 excellent original papers submitted by several research teams representing 14 institutions in Europe, America, and Asia. Several device concepts which

  7. Neuroelectric Virtual Devices

    NASA Technical Reports Server (NTRS)

    Wheeler, Kevin; Jorgensen, Charles

    2000-01-01

    This paper presents recent results in neuroelectric pattern recognition of electromyographic (EMG) signals used to control virtual computer input devices. The devices are designed to substitute for the functions of both a traditional joystick and keyboard entry method. We demonstrate recognition accuracy through neuroelectric control of a 757 class simulation aircraft landing at San Francisco International Airport using a virtual joystick as shown. This is accomplished by a pilot closing his fist in empty air and performing control movements that are captured by a dry electrode array on the arm which are then analyzed and routed through a flight director permitting full pilot outer loop control of the simulation. We then demonstrate finer grain motor pattern recognition through a virtual keyboard by having a typist tap his traders on a typical desk in a touch typist position. The EMG signals are then translated to keyboard presses and displayed. The paper describes the bioelectric pattern recognition methodology common to both examples. Figure 2 depicts raw EMG data from typing, the numeral '8' and the numeral '9'. These two gestures are very close in appearance and statistical properties yet are distinguishable by our hidden Kharkov model algorithms. Extensions of this work to NASA emissions and robotic control are considered.

  8. Thermoplastic tape compaction device

    DOEpatents

    Campbell, V.W.

    1994-12-27

    A device is disclosed for bonding a thermoplastic tape to a substrate to form a fully consolidated composite. This device has an endless chain associated with a frame so as to rotate in a plane that is perpendicular to a long dimension of the tape, the chain having pivotally connected chain links with each of the links carrying a flexible foot member that extends outwardly from the chain. A selected number of the foot members contact the tape, after the heating thereof, to cause the heated tape to bond to the substrate. The foot members are each a thin band of metal oriented transversely to the chain, with a flexibility and width and length to contact the tape so as to cause the tape to conform to the substrate to achieve consolidation of the tape and the substrate. A biased leaf-type spring within the frame bears against an inner surface of the chain to provide the compliant pressure necessary to bond the tape to the substrate. The chain is supported by sprockets on shafts rotatably supported in the frame and, in one embodiment, one of the shafts has a drive unit to produce rotation such that the foot members in contact with the tape move at the same speed as the tape. Cooling jets are positioned along the frame to cool the resultant consolidated composite. 5 figures.

  9. Thermoplastic tape compaction device

    DOEpatents

    Campbell, Vincent W.

    1994-01-01

    A device for bonding a thermoplastic tape to a substrate to form a fully consolidated composite. This device has an endless chain associated with a frame so as to rotate in a plane that is perpendicular to a long dimension of the tape, the chain having pivotally connected chain links with each of the links carrying a flexible foot member that extends outwardly from the chain. A selected number of the foot members contact the tape, after the heating thereof, to cause the heated tape to bond to the substrate. The foot members are each a thin band of metal oriented transversely to the chain, with a flexibility and width and length to contact the tape so as to cause the tape to conform to the substrate to achieve consolidation of the tape and the substrate. A biased leaf-type spring within the frame bears against an inner surface of the chain to provide the compliant pressure necessary to bond the tape to the substrate. The chain is supported by sprockets on shafts rotatably supported in the frame and, in one embodiment, one of the shafts has a drive unit to produce rotation such that the foot members in contact with the tape move at the same speed as the tape. Cooling jets are positioned along the frame to cool the resultant consolidated composite.

  10. Carbon based prosthetic devices

    SciTech Connect

    Devlin, D.J.; Carroll, D.W.; Barbero, R.S.; Archuleta, T.; Klawitter, J.J.; Ogilvie, W.; Strzepa, P.; Cook, S.D.

    1998-12-31

    This is the final report of a one-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project objective was to evaluate the use of carbon/carbon-fiber-reinforced composites for use in endoprosthetic devices. The application of these materials for the metacarpophalangeal (MP) joints of the hand was investigated. Issues concerning mechanical properties, bone fixation, biocompatibility, and wear are discussed. A system consisting of fiber reinforced materials with a pyrolytic carbon matrix and diamond-like, carbon-coated wear surfaces was developed. Processes were developed for the chemical vapor infiltration (CVI) of pyrolytic carbon into porous fiber preforms with the ability to tailor the outer porosity of the device to provide a surface for bone in-growth. A method for coating diamond-like carbon (DLC) on the articulating surface by plasma-assisted chemical vapor deposition (CVD) was developed. Preliminary results on mechanical properties of the composite system are discussed and initial biocompatibility studies were performed.

  11. Charge coupled devices

    NASA Technical Reports Server (NTRS)

    Walker, J. W.; Hornbeck, L. J.; Stubbs, D. P.

    1977-01-01

    The results are presented of a program to design, fabricate, and test CCD arrays suitable for operation in an electron-bombarded mode. These intensified charge coupled devices have potential application to astronomy as photon-counting arrays. The objectives of this program were to deliver arrays of 250 lines of 400 pixels each and some associated electronics. Some arrays were delivered on tube-compatible headers and some were delivered after incorporation in vacuum tubes. Delivery of these devices required considerable improvements to be made in the processing associated with intensified operation. These improvements resulted in a high yield in the thinning process, reproducible results in the accumulation process, elimination of a dark current source in the accumulation process, solution of a number of header related problems, and the identification of a remaining major source of dark current. Two systematic failure modes were identified and protective measures established. The effects of tube processing on the arrays in the delivered ICCDs were determined and are reported along with the characterization data on the arrays.

  12. Solar heating device

    SciTech Connect

    Everett, P.T.

    1984-07-10

    A stationary solar heating device is disclosed herein for heating water usable for domestic or industrial purposes which provides a solar ray collector assembly having a conical shell retained on a supporting base having a conical arrangement of tubular coils carried on the exterior surface thereof. The coils are characterized as having a generally circular cross section with a flat mounting side adjacent to the conical shell for maximum thermal transference to a circulating fluid carried by the coils. A transparent or light permeable protective shield encloses the entire collector assembly and opposite ends of the tubular coil at the base and the apex respectively serve as fluid input and output conduits. An air relief valve is operably coupled into the topmost coil of the assembly and the interior of the shell is substantially insulated to preserve heat in the shell and in the fluid carried by the tubular coils. An anchoring system is provided for coupling the protective shield and the collector assembly together into a unitary construction and which includes a cable tie-down arrangement for securing the complete solar heating device in a stationary, non-movable manner to a roof or ground foundation.

  13. Micro-organ device

    NASA Technical Reports Server (NTRS)

    Gonda, Steve R. (Inventor); von Gustedt-Gonda, legal representative, Iris (Inventor); Chang, Robert C. (Inventor); Starly, Binil (Inventor); Culbertson, Christopher (Inventor); Holtorf, Heidi L. (Inventor); Sun, Wei (Inventor); Leslie, Julia (Inventor)

    2013-01-01

    A method for fabricating a micro-organ device comprises providing a microscale support having one or more microfluidic channels and one or more micro-chambers for housing a micro-organ and printing a micro-organ on the microscale support using a cell suspension in a syringe controlled by a computer-aided tissue engineering system, wherein the cell suspension comprises cells suspended in a solution containing a material that functions as a three-dimensional scaffold. The printing is performed with the computer-aided tissue engineering system according to a particular pattern. The micro-organ device comprises at least one micro-chamber each housing a micro-organ; and at least one microfluidic channel connected to the micro-chamber, wherein the micro-organ comprises cells arranged in a configuration that includes microscale spacing between portions of the cells to facilitate diffusion exchange between the cells and a medium supplied from the at least one microfluidic channel.

  14. Micro-Organ Device

    NASA Technical Reports Server (NTRS)

    Gonda, Steve R. (Inventor); Chang, Robert C. (Inventor); Starly, Binil (Inventor); Culbertson, Christopher (Inventor); Holtorf, Heidi L. (Inventor); Sun, Wei (Inventor); Leslie, Julia (Inventor)

    2013-01-01

    A method for fabricating a micro-organ device comprises providing a microscale support having one or more microfluidic channels and one or more micro-chambers for housing a micro-organ and printing a micro-organ on the microscale support using a cell suspension in a syringe controlled by a computer-aided tissue engineering system, wherein the cell suspension comprises cells suspended in a solution containing a material that functions as a three-dimensional scaffold. The printing is performed with the computer-aided tissue engineering system according to a particular pattern. The micro-organ device comprises at least one micro-chamber each housing a micro-organ; and at least one microfluidic channel connected to the micro-chamber, wherein the micro-organ comprises cells arranged in a configuration that includes microscale spacing between portions of the cells to facilitate diffusion exchange between the cells and a medium supplied from the at least one microfluidic channel.

  15. Remotely controllable actuating device

    NASA Technical Reports Server (NTRS)

    McKillip, Jr., Robert M. (Inventor)

    1998-01-01

    An actuating device can change a position of an active member that remains in substantially the same position in the absence of a force of a predetermined magnitude on the active member. The actuating device comprises a shape-memory alloy actuating member for exerting a force when actuated by changing the temperature thereof, which shape-memory alloy actuating member has a portion for connection to the active member for exerting thereon a force having a magnitude at least as large as the predetermined magnitude for moving the active member to a desired position. Actuation circuitry is provided for actuating the shape-memory alloy actuating member by changing the temperature thereof only for the time necessary to move the active member to the desired position. The invention is particularly useful for changing the position of a camber-adjusting tab on a helicopter rotor blade by using two shape-memory alloy members that can act against each other to adjust dynamic properties of the rotor blade as it is rotating.

  16. Fluid flow monitoring device

    DOEpatents

    McKay, Mark D.; Sweeney, Chad E.; Spangler, Jr., B. Samuel

    1993-01-01

    A flow meter and temperature measuring device comprising a tube with a body centered therein for restricting flow and a sleeve at the upper end of the tube to carry several channels formed longitudinally in the sleeve to the appropriate axial location where they penetrate the tube to allow pressure measurements and temperature measurements with thermocouples. The high pressure measurement is made using a channel penetrating the tube away from the body and the low pressure measurement is made at a location at the widest part of the body. An end plug seals the end of the device and holes at its upper end allow fluid to pass from the interior of the tube into a plenum. The channels are made by cutting grooves in the sleeve, the grooves widened at the surface of the sleeve and then a strip of sleeve material is welded to the grooves closing the channels. Preferably the sleeve is packed with powdered graphite before cutting the grooves and welding the strips.

  17. Nanophotonics: materials and devices

    NASA Astrophysics Data System (ADS)

    Levy, Uriel; Tsai, Chia-Ho; Nezhad, M.; Nakagawa, Wataru; Chen, C.-H.; Tetz, Kevin A.; Pang, L.; Fainman, Yeshaiahu

    2004-07-01

    Optical technology plays an increasingly important role in numerous applications areas, including communications, information processing, and data storage. However, as optical technology develops, it is evident that there is a growing need to develop reliable photonic integration technologies. This will include the development of passive as well as active optical components that can be integrated into functional optical circuits and systems, including filters, switching fabrics that can be controlled either electrically or optically, optical sources, detectors, amplifiers, etc. We explore the unique capabilities and advantages of nanotechnology in developing next generation integrated photonic chips. Our long-range goal is to develop a range of photonic nanostructures including artificially birefringent and resonant devices, photonic crystals, and photonic crystals with defects to tailor spectral filters, and nanostructures for spatial field localization to enhance optical nonlinearities, to facilitate on-chip system integration through compatible materials and fabrication processes. The design of artificial nanostructured materials, PCs and integrated photonic systems is one of the most challenging tasks as it not only involves the accurate solution of electromagnetic optics equations, but also the need to incorporate the material and quantum physics equations. Near-field interactions in artificial nanostructured materials provide a variety of functionalities useful for optical systems integration. Furthermore, near-field optical devices facilitate miniaturization, and simultaneously enhance multifunctionality, greatly increasing the functional complexity per unit volume of the photonic system. Finally and most importantly, nanophotonics may enable easier integration with other nanotechnologies: electronics, magnetics, mechanics, chemistry, and biology.

  18. Preface: Heterostructure terahertz devices

    NASA Astrophysics Data System (ADS)

    Ryzhii, Victor

    2008-08-01

    The terahertz (THz) range of frequencies is borderline between microwave electronics and photonics. It corresponds to the frequency bands of molecular and lattice vibrations in gases, fluids, and solids. The importance of the THz range is in part due to numerous potential and emerging applications which include imaging and characterization, detection of hazardous substances, environmental monitoring, radio astronomy, covert inter-satellite communications, as well as biological and medical applications. During the last decades marked progress has been achieved in the development, fabrication, and practical implementation of THz devices and systems. This is primarily owing to the utilization of gaseous and free electron lasers and frequency converters using nonlinear optical phenomena as sources of THz radiation. However, such devices and hence the systems based on them are fairly cumbersome. This continuously stimulates an extensive search for new compact and efficient THz sources based on semiconductor heterostructures. Despite tremendous efforts lasting several decades, the so-called THz gap unbridged by semiconductor heterostructure electron and optoelectron devices still exists providing appropriate levels of power of the generated THz radiation. The invention and realization of quantum cascade lasers made of multiple quantum-well heterostructures already resulted in the partial solution of the problem in question, namely, in the successful coverage of the high-frequency portion of the THz gap (2-3 THz and higher). Further advancement to lower frequencies meets, perhaps, fundamental difficulties. All this necessitates further extensive theoretical and experimental studies of more or less traditional and novel semiconductor heterostructures as a basis for sources of THz radiation. This special issue includes 11 excellent original papers submitted by several research teams representing 14 institutions in Europe, America, and Asia. Several device concepts which

  19. Stretchable and wearable electrochromic devices.

    PubMed

    Yan, Chaoyi; Kang, Wenbin; Wang, Jiangxin; Cui, Mengqi; Wang, Xu; Foo, Ce Yao; Chee, Kenji Jianzhi; Lee, Pooi See

    2014-01-28

    Stretchable and wearable WO3 electrochromic devices on silver nanowire (AgNW) elastic conductors are reported. The stretchable devices are mechanically robust and can be stretched, twisted, folded, and crumpled without performance failure. Fast coloration (1 s) and bleaching (4 s) time and good cyclic stability (81% retention after 100 cycles) were achieved at relaxed state. Proper functioning at stretched state (50% strain) was also demonstrated. The electrochromic devices were successfully implanted onto textile substrates for potential wearable applications. As most existing electrochromic devices are based on rigid technologies, the innovative devices in their soft form hold the promise for next-generation electronics such as stretchable, wearable, and implantable display applications.

  20. Stretchable and foldable electronic devices

    DOEpatents

    Rogers, John A; Huang, Yonggang; Ko, Heung Cho; Stoykovich, Mark; Choi, Won Mook; Song, Jizhou; Ahn, Jong Hyun; Kim, Dae Hyeong

    2013-10-08

    Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

  1. Stretchable and foldable electronic devices

    DOEpatents

    Rogers, John A; Huang, Yonggang; Ko, Heung Cho; Stoykovich, Mark; Choi, Won Mook; Song, Jizhou; Ahn, Jong Hyun; Kim, Dae Hyeong

    2014-12-09

    Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

  2. 21 CFR 874.5840 - Antistammering device.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ...) MEDICAL DEVICES EAR, NOSE, AND THROAT DEVICES Therapeutic Devices § 874.5840 Antistammering device. (a) Identification. An antistammering device is a device that electronically generates a noise when activated or when... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Antistammering device. 874.5840 Section...

  3. 21 CFR 874.5840 - Antistammering device.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ...) MEDICAL DEVICES EAR, NOSE, AND THROAT DEVICES Therapeutic Devices § 874.5840 Antistammering device. (a) Identification. An antistammering device is a device that electronically generates a noise when activated or when... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Antistammering device. 874.5840 Section...

  4. Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by using Focused Ion Beam

    NASA Astrophysics Data System (ADS)

    Zhu, Wencong

    Compared with other transparent semiconductors, amorphous indium gallium zinc oxide (a-IGZO) has both good uniformity and high electron mobility, which make it as a good candidate for displays or large-scale transparent circuit. The goal of this research is to fabricate alpha-IGZO thin film transistor (TFT) with channel milled by focused ion beam (FIB). TFTs with different channel geometries can be achieved by applying different milling strategies, which facilitate modifying complex circuit. Technology Computer-Aided Design (TCAD) was also introduced to understand the effect of trapped charges on the device performance. The investigation of the trapped charge at IGZO/SiO2 interface was performed on the IGZO TFT on p-Silicon substrate with thermally grown SiO2 as dielectric. The subgap density-of-state model was used for the simulation, which includes conduction band-tail trap states and donor-like state in the subgap. The result shows that the de-trapping and donor-state ionization determine the interface trapped charge density at various gate biases. Simulation of IGZO TFT with FIB defined channel on the same substrate was also applied. The drain and source were connected intentionally during metal deposition and separated by FIB milling. Based on the simulation, the Ga ions in SiO2 introduced by the ion beam was drifted by gate bias and affects the saturation drain current. Both side channel and direct channel transparent IGZO TFTs were fabricated on the glass substrate with coated ITO. Higher ion energy (30 keV) was used to etch through the substrate between drain and source and form side channels at the corner of milled trench. Lower ion energy (16 keV) was applied to stop the milling inside IGZO thin film and direct channel between drain and source was created. Annealing after FIB milling removed the residual Ga ions and the devices show switch feature. Direct channel shows higher saturation drain current (~10-6 A) compared with side channel (~10-7 A) because

  5. Cybersecurity for Connected Diabetes Devices.

    PubMed

    Klonoff, David C

    2015-04-16

    Diabetes devices are increasingly connected wirelessly to each other and to data-displaying reader devices. Threats to the accurate flow of information and commands may compromise the function of these devices and put their users at risk of health complications. Sound cybersecurity of connected diabetes devices is necessary to maintain confidentiality, integrity, and availability of the data and commands. Diabetes devices can be hacked by unauthorized agents and also by patients themselves to extract data that are not automatically provided by product software. Unauthorized access to connected diabetes devices has been simulated and could happen in reality. A cybersecurity standard designed specifically for connected diabetes devices will improve the safety of these products and increase confidence of users that the products will be secure.

  6. Graphene-based conformal devices.

    PubMed

    Park, Yong Ju; Lee, Seoung-Ki; Kim, Min-Seok; Kim, Hyunmin; Ahn, Jong-Hyun

    2014-08-26

    Despite recent progress in bendable and stretchable thin-film transistors using novel designs and materials, the development of conformal devices remains limited by the insufficient flexibility of devices. Here, we demonstrate the fabrication of graphene-based conformal and stretchable devices such as transistor and tactile sensor on a substrate with a convoluted surface by scaling down the device thickness. The 70 nm thick graphene-based conformal devices displayed a much lower bending stiffness than reported previously. The demonstrated devices provided excellent conformal coverage over an uneven animal hide surface without the need for an adhesive. In addition, the ultrathin graphene devices formed on the three-dimensionally curved animal hide exhibited stable electrical characteristics, even under repetitive bending and twisting. The advanced performance and flexibility demonstrated here show promise for the development and adoption of wearable electronics in a wide range of future applications.

  7. Cybersecurity for Connected Diabetes Devices

    PubMed Central

    Klonoff, David C.

    2015-01-01

    Diabetes devices are increasingly connected wirelessly to each other and to data-displaying reader devices. Threats to the accurate flow of information and commands may compromise the function of these devices and put their users at risk of health complications. Sound cybersecurity of connected diabetes devices is necessary to maintain confidentiality, integrity, and availability of the data and commands. Diabetes devices can be hacked by unauthorized agents and also by patients themselves to extract data that are not automatically provided by product software. Unauthorized access to connected diabetes devices has been simulated and could happen in reality. A cybersecurity standard designed specifically for connected diabetes devices will improve the safety of these products and increase confidence of users that the products will be secure. PMID:25883162

  8. Organic photoresponse materials and devices.

    PubMed

    Dong, Huanli; Zhu, Hongfei; Meng, Qing; Gong, Xiong; Hu, Wenping

    2012-03-07

    Organic photoresponse materials and devices are critically important to organic optoelectronics and energy crises. The activities of photoresponse in organic materials can be summarized in three effects, photoconductive, photovoltaic and optical memory effects. Correspondingly, devices based on the three effects can be divided into (i) photoconductive devices such as photodetectors, photoreceptors, photoswitches and phototransistors, (ii) photovoltaic devices such as organic solar cells, and (iii) optical data storage devices. It is expected that this systematic analysis of photoresponse materials and devices could be a guide for the better understanding of structure-property relationships of organic materials and provide key clues for the fabrication of high performance organic optoelectronic devices, the integration of them in circuits and the application of them in renewable green energy strategies (critical review, 452 references).

  9. Nuclear reactor safety device

    DOEpatents

    Hutter, E.

    1983-08-15

    A safety device is described for use in a nuclear reactor for axially repositioning a control rod with respect to the reactor core in the event of a thermal excursion. It comprises a laminated strip helically configured to form a tube, said tube being in operative relation to said control rod. The laminated strip is formed of at least two materials having different thermal coefficients of expansion, and is helically configured such that the material forming the outer lamina of the tube has a greater thermal coefficient of expansion than the material forming the inner lamina of said tube. In the event of a thermal excursion the laminated strip will tend to curl inwardly so that said tube will increase in length, whereby as said tube increases in length it exerts a force on said control rod to axially reposition said control rod with respect to said core.

  10. Air bag restraint device

    DOEpatents

    Marts, D.J.; Richardson, J.G.

    1995-10-17

    A rear-seat air bag restraint device is disclosed that prevents an individual, or individuals, from continuing violent actions while being transported in a patrol vehicle`s rear seat without requiring immediate physical contact by the law enforcement officer. The air bag is activated by a control switch in the front seat and inflates to independently restrict the amount of physical activity occurring in the rear seat of the vehicle while allowing the officer to safely stop the vehicle. The air bag can also provide the officer additional time to get backup personnel to aid him if the situation warrants it. The bag is inflated and maintains a constant pressure by an air pump. 8 figs.

  11. Air bag restraint device

    DOEpatents

    Marts, Donna J.; Richardson, John G.

    1995-01-01

    A rear-seat air bag restraint device is disclosed that prevents an individual, or individuals, from continuing violent actions while being transported in a patrol vehicle's rear seat without requiring immediate physical contact by the law enforcement officer. The air bag is activated by a control switch in the front seat and inflates to independently restrict the amount of physical activity occurring in the rear seat of the vehicle while allowing the officer to safely stop the vehicle. The air bag can also provide the officer additional time to get backup personnel to aid him if the situation warrants it. The bag is inflated and maintains a constant pressure by an air pump.

  12. Polarization Perception Device

    NASA Technical Reports Server (NTRS)

    Whitehead, Victor S. (Inventor); Coulson, Kinsell L. (Inventor)

    1997-01-01

    A polarization perception device comprises a base and a polarizing filter having opposite broad sides and a centerline perpendicular thereto. The filter is mounted on the base for relative rotation and with a major portion of the area of the filter substantially unobstructed on either side. A motor on the base automatically moves the filter angularly about its centerline at a speed slow enough to permit changes in light transmission by virtue of such movement to be perceived as light-dark pulses by a human observer, but fast enough so that the light phase of each such pulse occurs prior to fading of the light phase image of the preceding pulse from the observer's retina. In addition to an observer viewing a scene in real time through the filter while it is so angularly moved, or instead of such observation, the scene can be photographed, filmed or taped by a camera whose lens is positioned behind the filter.

  13. Polarization perception device

    NASA Technical Reports Server (NTRS)

    Whitehead, Victor S. (Inventor); Coulson, Kinsel L. (Inventor)

    1992-01-01

    A polarization perception device comprises a base and a polarizing filter having opposite broad sides and a centerline perpendicular thereto. The filter is mounted on the base for relative rotation and with a major portion of the area of the filter substantially unobstructed on either side. A motor on the base automatically moves the filter angularly about its centerline at a speed slow enough to permit changes in light transmission by virtue of such movement to be perceived as light-dark pulses by a human observer, but fast enough so that the light phase of each such pulse occurs prior to fading of the light phase image of the preceding pulse from the observer's retina. In addition to an observer viewing a scene in real time through the filter while it is so angularly moved, or instead of such observation, the scene can be photographed, filmed or taped by a camera whose lens is positioned behind the filter.

  14. Tunable surface plasmon devices

    DOEpatents

    Shaner, Eric A.; Wasserman, Daniel

    2011-08-30

    A tunable extraordinary optical transmission (EOT) device wherein the tunability derives from controlled variation of the dielectric constant of a semiconducting material (semiconductor) in evanescent-field contact with a metallic array of sub-wavelength apertures. The surface plasmon resonance wavelength can be changed by changing the dielectric constant of the dielectric material. In embodiments of this invention, the dielectric material is a semiconducting material. The dielectric constant of the semiconducting material in the metal/semiconductor interfacial region is controllably adjusted by adjusting one or more of the semiconductor plasma frequency, the concentration and effective mass of free carriers, and the background high-frequency dielectric constant in the interfacial region. Thermal heating and/or voltage-gated carrier-concentration changes may be used to variably adjust the value of the semiconductor dielectric constant.

  15. CUSP-PINCH DEVICE

    DOEpatents

    Baker, W.R.; Watteau, J.P.H.

    1962-06-01

    An ion-electron plasma heating device of the pinch tube class is designed with novel means for counteracting the instabilities of an ordinary linear pinch discharge. A plasma-forming discharge is created between two spacedapart coaxial electiodes through a gas such as deuterium. A pair of spaced coaxial magnetic field coils encircle the discharge and carry opposing currents so that a magnetic field having a cuspate configuration is created around the plasma, the field being formed after the plasma has been established but before significant instability arises. Thus, containment time is increased and intensified heating is obtained. In addition to the pinch compression heating additional heating is obtained by high-frequency magnetic field modulation. (AEC)

  16. Ultrasonography of intrauterine devices

    PubMed Central

    Nowitzki, Kristina M.; Hoimes, Matthew L.; Chen, Byron; Zheng, Larry Z.; Kim, Young H.

    2015-01-01

    The intrauterine device (IUD) is gaining popularity as a reversible form of contraception. Ultrasonography serves as first-line imaging for the evaluation of IUD position in patients with pelvic pain, abnormal bleeding, or absent retrieval strings. This review highlights the imaging of both properly positioned and malpositioned IUDs. The problems associated with malpositioned IUDs include expulsion, displacement, embedment, and perforation. Management considerations depend on the severity of the malposition and the presence or absence of symptoms. Three-dimensional ultrasonography has proven to be more sensitive in the evaluation of more subtle findings of malposition, particularly side-arm embedment. Familiarity with the ultrasonographic features of properly positioned and malpositioned IUDs is essential. PMID:25985959

  17. Tool setting device

    DOEpatents

    Brown, Raymond J.

    1977-01-01

    The present invention relates to a tool setting device for use with numerically controlled machine tools, such as lathes and milling machines. A reference position of the machine tool relative to the workpiece along both the X and Y axes is utilized by the control circuit for driving the tool through its program. This reference position is determined for both axes by displacing a single linear variable displacement transducer (LVDT) with the machine tool through a T-shaped pivotal bar. The use of the T-shaped bar allows the cutting tool to be moved sequentially in the X or Y direction for indicating the actual position of the machine tool relative to the predetermined desired position in the numerical control circuit by using a single LVDT.

  18. Tube coupling device

    NASA Technical Reports Server (NTRS)

    Myers, William N. (Inventor); Hein, Leopold A. (Inventor)

    1987-01-01

    A first annular ring of a tube coupling device has a keyed opening sized to fit around the nut region of a male coupling, and a second annular ring has a keyed opening sized to fit around the nut of a female coupling. Each ring has mating ratchet teeth and these rings are biased together, thereby engaging these teeth and preventing rotation of these rings. This in turn prevents the rotation of the male nut region with respect to the female nut. For tube-to-bulkhead locking, one facet of one ring is notched, and a pin is pressed into an opening in the bulkhead. This pin is sized to fit within one of the notches in the ring, thereby preventing rotation of this ring with respect to the bulkhead.

  19. Efficient thermoelectric device

    NASA Technical Reports Server (NTRS)

    Ila, Daryush (Inventor)

    2010-01-01

    A high efficiency thermo electric device comprising a multi nanolayer structure of alternating insulator and insulator/metal material that is irradiated across the plane of the layer structure with ionizing radiation. The ionizing radiation produces nanocrystals in the layered structure that increase the electrical conductivity and decrease the thermal conductivity thereby increasing the thermoelectric figure of merit. Figures of merit as high as 2.5 have been achieved using layers of co-deposited gold and silicon dioxide interspersed with layers of silicon dioxide. The gold to silicon dioxide ratio was 0.04. 5 MeV silicon ions were used to irradiate the structure. Other metals and insulators may be substituted. Other ionizing radiation sources may be used. The structure tolerates a wide range of metal to insulator ratio.

  20. Personal annunciation device

    DOEpatents

    Angelo, Peter [Oak Ridge, TN; Younkin, James [Oak Ridge, TN; DeMint, Paul [Kingston, TN

    2011-01-25

    A personal annunciation device (PAD) providing, in an area of interest, compensatory annunciation of the presence of an abnormal condition in a hazardous area and accountability of the user of the PAD. Compensatory annunciation supplements primary annunciation provided by an emergency notification system (ENS). A detection system detects an abnormal condition, and a wireless transmission system transmits a wireless transmission to the PAD. The PAD has a housing enclosing the components of the PAD including a communication module for receiving the wireless transmission, a power supply, processor, memory, annunciation system, and RFID module. The RFID module has an RFID receiver that listens for an RFID transmission from an RFID reader disposed in a portal of an area of interest. The PAD identifies the transmission and changes its operating state based on the transmission. The RFID readers recognize, record, and transmit the state of the PAD to a base station providing accountability of the wearer.

  1. Module isolation devices

    DOEpatents

    Carolan, Michael Francis; Cooke, John Albert; Buzinski, Michael David

    2010-04-27

    A gas flow isolation device includes a gas flow isolation valve movable from an opened condition to a closed condition. The module isolation valve in one embodiment includes a rupture disk in flow communication with a flow of gas when the module isolation valve is in an opened condition. The rupture disk ruptures when a predetermined pressure differential occurs across it causing the isolation valve to close. In one embodiment the valve is mechanically linked to the rupture disk to maintain the valve in an opened condition when the rupture disk is intact, and which permits the valve to move into a closed condition when the rupture disk ruptures. In another embodiment a crushable member maintains the valve in an open condition, and the flow of gas passed the valve upon rupturing of the rupture disk compresses the crushable member to close the isolation valve.

  2. Cathodochromic storage device

    NASA Technical Reports Server (NTRS)

    Bosomworth, D. R.; Moles, W. H.

    1969-01-01

    A memory and display device has been developed by combing a fast phosphor layer with a cathodochromic layer in a cathode ray tube. Images are stored as patterns of electron beam induced optical density in the cathodo-chromic material. The stored information is recovered by exciting the backing, fast phosphor layer with a constant current electron beam and detecting the emitted radiation which is modulated by absorption in the cathodochromic layer. The storage can be accomplished in one or more TV frames (1/30 sec each). More than 500 TV line resolution and close to 2:1 contrast ratio are possible. The information storage time in a dark environment is approximately 24 hours. A reconstituted (readout) electronic video signal can be generated continuously for times in excess of 10 minutes or periodically for several hours.

  3. TWO-SPEED DEVICE

    DOEpatents

    Brunson, G.S. Jr.

    1961-04-01

    A two-speed device is described comprising a two-part stop engageable with a follower. The two-pant stop comprises first and second members in threaded engagement with each other. The first member is restrained against rotation but is free to move longitudinally, and the second member is free to move arially and rotatively. Means are provided to impart rotation to the second member. The follower is engageable first with an end of one member and then with the corresponding end of the other member after some relative longitudinal movement of the members with respect to one another due to the rotation of the second member and the holding of the first member against rotation.

  4. Rotary encoding device

    NASA Technical Reports Server (NTRS)

    Leviton, Douglas B. (Inventor)

    1993-01-01

    A device for position encoding of a rotating shaft in which a polygonal mirror having a number of facets is mounted to the shaft and a light beam is directed towards the facets is presented. The facets of the polygonal mirror reflect the light beam such that a light spot is created on a linear array detector. An analog-to-digital converter is connected to the linear array detector for reading the position of the spot on the linear array detector. A microprocessor with memory is connected to the analog-to-digital converter to hold and manipulate the data provided by the analog-to-digital converter on the position of the spot and to compute the position of the shaft based upon the data from the analog-to-digital converter.

  5. Light emitting ceramic device

    DOEpatents

    Valentine, Paul; Edwards, Doreen D.; Walker, Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

    2010-05-18

    A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, is herein claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

  6. METAL RESISTIVITY MEASURING DEVICE

    DOEpatents

    Renken, J. Jr.; Myers, R.G.

    1960-12-20

    An eddy current device is offered for detecting discontinuities in metal samples. Alternate short and long duration pulses are inductively applied to a metal sample via the outer coil of a probe. The long pulses give a resultant signal from the metal sample responsive to probe-tosample spacing and discontinuities within the sample and the shont pulses give a resultant signal responsive only to probe -to-sample spacing. The inner coil of the probe detects the two resultant signals and transmits them to a separation network where the two signals are separated. The two separated signals are then transmitted to a compensation network where the detected signals due to the short pulses are used to compensate for variations due to probe-to-sample spacing contained in the detected signals from the long pulses. Thus, a resultant signal is obtained responsive to discontinuities within the sample and independent of probe-to- sample spacing.

  7. Metal Resistivity Measuring Device

    DOEpatents

    Renken, Jr, C. J.; Myers, R. G.

    1960-12-20

    An eddy current device is designed for detecting discontinuities in metal samples. Alternate short and long duration pulses are inductively applied to a metal sample via the outer coil of a probe. The lorg pulses give a resultant signal from the metal sample responsive to probe-tosample spacing and discontinuities with the sample, and the short pulses give a resultant signal responsive only to probe-to-sample spacing. The inner coil of the probe detects the two resultant signals and transmits them to a separation network where the two signals are separated. The two separated signals are then transmitted to a compensation network where the detected signals due to the short pulses are used to compensate for variations due to probeto-sample spacing contained in the detected signals from the long pulses. Thus a resultant signal is obtained responsive to discontinuities within the sample and independent of probe-to- sample spacing.

  8. Linear encoding device

    NASA Technical Reports Server (NTRS)

    Leviton, Douglas B. (Inventor)

    1993-01-01

    A Linear Motion Encoding device for measuring the linear motion of a moving object is disclosed in which a light source is mounted on the moving object and a position sensitive detector such as an array photodetector is mounted on a nearby stationary object. The light source emits a light beam directed towards the array photodetector such that a light spot is created on the array. An analog-to-digital converter, connected to the array photodetector is used for reading the position of the spot on the array photodetector. A microprocessor and memory is connected to the analog-to-digital converter to hold and manipulate data provided by the analog-to-digital converter on the position of the spot and to compute the linear displacement of the moving object based upon the data from the analog-to-digital converter.

  9. Value contamination avoidance devices

    NASA Technical Reports Server (NTRS)

    Endicott, D. L.

    1975-01-01

    Mechanical redesign methods were used to minimize contamination damage of conventional fluid components and a contamination separator device was developed for long term reusable space vehicles. These were incorporated into an existing 50.8 mm poppet valve and tested for damage tolerance in a full size open loop flow system with gaseous and liquid nitrogen. Cyclic and steady flow conditions were tested with particles of 125 to 420 micrometers aluminum oxide dispersed in the test fluids. Nonflow life tests (100,000 cycles) were made with two valve configurations in gaseous hydrogen. The redesigned valve had an acceptable cycle life and improved tolerance to contamination damage when the primary sealing surfaces were coated with thin coatings of hard plastic (Teflon S and Kynar). Analytical studies and flow testing were completed of four different versions of the separator. overall separation efficiencies in the 55-90% range were measured with these non-optimum configurations.

  10. Optical storage device

    NASA Technical Reports Server (NTRS)

    Welch, Sharon S.

    1991-01-01

    A new holographic image storage device which uses four-wave mixing in two photorefractive crystals is described. Photorefractive crystals promise information storage densities on the order of 10(exp 9) to 10(exp 12) bits per cubic centimeter at real-time rates. Several studies in recent years have investigated the use of photorefractive crystals for storing holographic image information. However, all of the previous studies have focused on techniques for storing information in a single crystal. The disadvantage of using a single crystal is that the read process is destructive. Researchers have developed techniques for fixing the information in a crystal so that it may be read many times. However, when fixed, the information cannot be readily erased and overwritten with new information. It two photorefractive crystals are used, holographic image information may be stored dynamically. That is, the stored image information may be read out more than once, and it may be easily erased and overwritten with new image information.

  11. Torsional Magnetorheological Device

    NASA Technical Reports Server (NTRS)

    Arnold, Steven M. (Inventor); Penney, Nicholas (Inventor)

    2008-01-01

    A magnetorheological device comprising a housing having a divider within the housing is disclosed and claimed. A rotary impeller having two paddles is rotatably mounted within the housing. The rotary impeller sealingly engages the divider and the paddles in combination with the divider forms a first chamber and a second chamber. Magnetorheological fluid resides in the chambers and a passageway interconnects the first and second chambers. A coil surrounds a portion of the passageway such that when energized the magnetorheological fluid solidifies plugging the passageway. As the impeller rotates, it pushes the incompressible fluid against the divider in the housing and the plug in the passageway and retards and/or stops the motion of the impeller.

  12. Multichannel optical sensing device

    DOEpatents

    Selkowitz, S.E.

    1985-08-16

    A multichannel optical sensing device is disclosed, for measuring the outdoor sky luminance or illuminance or the luminance or illuminance distribution in a room, comprising a plurality of light receptors, an optical shutter matrix including a plurality of liquid crystal optical shutter elements operable by electrical control signals between light transmitting and light stopping conditions, fiber optical elements connected between the receptors and the shutter elements, a microprocessor based programmable control unit for selectively supplying control signals to the optical shutter elements in a programmable sequence, a photodetector including an optical integrating spherical chamber having an input port for receiving the light from the shutter matrix and at least one detector element in the spherical chamber for producing output signals corresponding to the light, and output units for utilizing the output signals including a storage unit having a control connection to the microprocessor based programmable control unit for storing the output signals under the sequence control of the programmable control unit.

  13. Multichannel optical sensing device

    DOEpatents

    Selkowitz, Stephen E.

    1990-01-01

    A multichannel optical sensing device is disclosed, for measuring the outr sky luminance or illuminance or the luminance or illuminance distribution in a room, comprising a plurality of light receptors, an optical shutter matrix including a plurality of liquid crystal optical shutter elements operable by electrical control signals between light transmitting and light stopping conditions, fiber optic elements connected between the receptors and the shutter elements, a microprocessor based programmable control unit for selectively supplying control signals to the optical shutter elements in a programmable sequence, a photodetector including an optical integrating spherical chamber having an input port for receiving the light from the shutter matrix and at least one detector element in the spherical chamber for producing output signals corresponding to the light, and output units for utilizing the output signals including a storage unit having a control connection to the microprocessor based programmable control unit for storing the output signals under the sequence control of the programmable control unit.

  14. Pressure Relief Devices

    NASA Astrophysics Data System (ADS)

    Manha, William D.

    2010-09-01

    Pressure relief devices are used in pressure systems and on pressure vessels to prevent catastrophic rupture or explosion from excessive pressure. Pressure systems and pressure vessels have manufacturers maximum rated operating pressures or maximum design pressures(MDP) for which there are relatively high safety factors and minimum risk of rupture or explosion. Pressure systems and pressure vessels that have a potential to exceed the MDP by being connected to another higher pressure source, a compressor, or heat to water(boiler) are required to have over-pressure protecting devices. Such devices can be relief valves and/or burst discs to safely relieve potentially excessive pressure and prevent unacceptable ruptures and explosions which result in fail-safe pressure systems and pressure vessels. Common aerospace relief valve and burst disc requirements and standards will be presented. This will include the NASA PSRP Interpretation Letter TA-88-074 Fault Tolerance of Systems Using Specially Certified Burst Disks that dictates burst disc requirements for payloads on Shuttle. Two recent undesirable manned space payloads pressure relief devices and practices will be discussed, as well as why these practices should not be continued. One example for discussion is the use of three burst discs that have been placed in series to comply with safety requirements of three controls to prevent a catastrophic hazard of the over-pressurization and rupture of pressure system and/or vessels. The cavities between the burst discs are evacuated and are the reference pressures for activating the two upstream burst discs. If the upstream burst disc leaks into the reference cavity, the reference pressure increases and it can increase the burst disc activating pressure and potentially result in the burst disc assembly being ineffective for over pressure protection. The three burst discs-in-series assembly was found acceptable because the burst discs are designed for minimum risk(DFMR) of

  15. False color viewing device

    DOEpatents

    Kronberg, J.W.

    1992-10-20

    A viewing device for observing objects in near-infrared false-color comprising a pair of goggles with one or more filters in the apertures, and pads that engage the face for blocking stray light from the sides so that all light reaching the user's eyes come through the filters. The filters attenuate most visible light and pass near-infrared (having wavelengths longer than approximately 700 nm) and a small amount of blue-green and blue-violet (having wavelengths in the 500 to 520 nm and shorter than 435 nm, respectively). The goggles are useful for looking at vegetation to identify different species and for determining the health of the vegetation, and to detect some forms of camouflage. 7 figs.

  16. False color viewing device

    DOEpatents

    Kronberg, James W.

    1992-01-01

    A viewing device for observing objects in near-infrared false-color comprising a pair of goggles with one or more filters in the apertures, and pads that engage the face for blocking stray light from the sides so that all light reaching the user's eyes come through the filters. The filters attenuate most visible light and pass near-infrared (having wavelengths longer than approximately 700 nm) and a small amount of blue-green and blue-violet (having wavelengths in the 500 to 520 nm and shorter than 435 nm, respectively). The goggles are useful for looking at vegetation to identify different species and for determining the health of the vegetation, and to detect some forms of camouflage.

  17. False color viewing device

    DOEpatents

    Kronberg, J.W.

    1991-05-08

    This invention consists of a viewing device for observing objects in near-infrared false-color comprising a pair of goggles with one or more filters in the apertures, and pads that engage the face for blocking stray light from the sides so that all light reaching, the user`s eyes come through the filters. The filters attenuate most visible light and pass near-infrared (having wavelengths longer than approximately 700 nm) and a small amount of blue-green and blue-violet (having wavelengths in the 500 to 520 nm and shorter than 435 nm, respectively). The goggles are useful for looking at vegetation to identify different species and for determining the health of the vegetation, and to detect some forms of camouflage.

  18. Materials for optoelectronic devices

    DOEpatents

    Shiang, Joseph John; Smigelski, Jr., Paul Michael

    2015-01-27

    Energy efficient optoelectronic devices include an electroluminescent layer containing a polymer made up of structural units of formula I and II; ##STR00001## wherein R.sup.1 and R.sup.2 are independently C.sub.22-44 hydrocarbyl, C.sub.22-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, oxaalkylaryl, or a combination thereof; R.sup.3 and R.sup.4 are independently H, C.sub.1-44 hydrocarbyl or C.sub.1-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, or R.sup.3 and R.sup.4, taken together, form a C.sub.2-10 monocyclic or bicyclic ring containing up to three S, N, O, P, or Si heteroatoms; and X is S, Se, or a combination thereof.

  19. Void detecting device

    DOEpatents

    Nakamoto, Koichiro; Ohyama, Nobumi; Adachi, Kiyoshi; Kuwahara, Hajime

    1979-01-01

    A detector to be inserted into a flowing conductive fluid, e.g. sodium coolant in a nuclear reactor, comprising at least one exciting coil to receive an a-c signal applied thereto and two detecting coils located in the proximity of the exciting coil. The difference and/or the sum of the output signals of the detecting coils is computed to produce a flow velocity signal and/or a temperature-responsive signal for the fluid. Such flow velocity signal or temperature signal is rectified synchronously by a signal the phase of which is shifted substantially .+-. 90.degree. with respect to the flow velocity signal or temperature signal, thereby enabling the device to detect voids in the flowing fluid without adverse effects from flow velocity variations or flow disturbances occurring in the fluid.

  20. Electrical safety device

    DOEpatents

    White, David B.

    1991-01-01

    An electrical safety device for use in power tools that is designed to automatically discontinue operation of the power tool upon physical contact of the tool with a concealed conductive material. A step down transformer is used to supply the operating power for a disconnect relay and a reset relay. When physical contact is made between the power tool and the conductive material, an electrical circuit through the disconnect relay is completed and the operation of the power tool is automatically interrupted. Once the contact between the tool and conductive material is broken, the power tool can be quickly and easily reactivated by a reset push button activating the reset relay. A remote reset is provided for convenience and efficiency of operation.

  1. Laser beam steering device

    NASA Technical Reports Server (NTRS)

    Motamedi, M. E.; Andrews, A. P.; Gunning, W. J.

    1993-01-01

    Agile beam steering is a critical requirement for airborne and space based LIDAR and optical communication systems. Design and test results are presented for a compact beam steering device with low inertia which functions by dithering two complementary (positive and negative) binary optic microlens arrays relative to each other in directions orthogonal to the direction of light propagation. The miniaturized system has been demonstrated at scan frequencies as high as 300 Hz, generating a 13 x 13 spot array with a total field of view of 2.4 degrees. The design is readily extendable to a 9.5 degree field of view and a 52 x 52 scan pattern. The system is compact - less than 2 in. on a side. Further size reductions are anticipated.

  2. Monitored separation device

    NASA Technical Reports Server (NTRS)

    Jackson, George William (Inventor); Willson, Richard Coale (Inventor); Fox, George Edward (Inventor)

    2011-01-01

    A device for separating and purifying useful quantities of particles comprises: a. an anolyte reservoir connected to an anode, the anolyte reservoir containing an electrophoresis buffer; b. a catholyte reservoir connected to a cathode, the catholyte reservoir also containing the electrophoresis buffer; c. a power supply connected to the anode and to the cathode; d. a column having a first end inserted into the anolyte reservoir, a second end inserted into the catholyte reservoir, and containing a separation medium; e. a light source; f. a first optical fiber having a first fiber end inserted into the separation medium, and having a second fiber end connected to the light source; g. a photo detector; h. a second optical fiber having a third fiber end inserted into the separation medium, and having a fourth fiber end connected to the photo detector; and i. an ion-exchange membrane in the anolyte reservoir.

  3. Capacitance measuring device

    DOEpatents

    Andrews, W.H. Jr.

    1984-08-01

    A capacitance measuring circuit is provided in which an unknown capacitance is measured by comparing the charge stored in the unknown capacitor with that stored in a known capacitance. Equal and opposite voltages are repetitively simultaneously switched onto the capacitors through an electronic switch driven by a pulse generator to charge the capacitors during the ''on'' portion of the cycle. The stored charge is compared by summing discharge currents flowing through matched resistors at the input of a current sensor during the ''off'' portion of the switching cycle. The net current measured is thus proportional to the difference in value of the two capacitances. The circuit is capable of providing much needed accuracy and stability to a great variety of capacitance-based measurement devices at a relatively low cost.

  4. Effect of organic buffer layer in the electrical properties of amorphous-indium gallium zinc oxide thin film transistor.

    PubMed

    Wang, Jian-Xun; Hyung, Gun Woo; Li, Zhao-Hui; Son, Sung-Yong; Kwon, Sang Jik; Kim, Young Kwan; Cho, Eou Sik

    2012-07-01

    In this research, we reported on the fabrication of top-contact amorphous-indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with an organic buffer layer between inorganic gate dielectric and active layer in order to improve the electrical properties of devices. By inserting an organic buffer layer, it was possible to make an affirmation of the improvements in the electrical characteristics of a-IGZO TFTs such as subthreshold slope (SS), on/off current ratio (I(ON/OFF)), off-state current, and saturation field-effect mobility (muFE). The a-IGZO TFTs with the cross-linked polyvinyl alcohol (c-PVA) buffer layer exhibited the pronounced improvements of the muFE (17.4 cm2/Vs), SS (0.9 V/decade), and I(ON/OFF) (8.9 x 10(6)).

  5. Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Jang, Jaeman; Kim, Dae Geun; Kim, Dong Myong; Choi, Sung-Jin; Lim, Jun-Hyung; Lee, Je-Hun; Kim, Yong-Sung; Ahn, Byung Du; Kim, Dae Hwan

    2014-10-01

    The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model, in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy VO2+ or peroxide O22- with the increase of EOT. It was also found that the VO2+-related extrinsic factor accounts for 80%-92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O22- related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The key founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.

  6. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack

    NASA Astrophysics Data System (ADS)

    Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin

    2015-12-01

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack under a maximal processing temperature of 300 oC. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at -17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at -14 V, a memory window of 2.08 V was still maintained after 103 P/E cycles, and a memory window of 1.1 V was retained after 105 s retention time.

  7. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack

    SciTech Connect

    Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin

    2015-12-15

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack under a maximal processing temperature of 300 {sup o}C. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 10{sup 3} P/E cycles, and a memory window of 1.1 V was retained after 10{sup 5} s retention time.

  8. Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

    SciTech Connect

    Jang, Jaeman; Kim, Dae Geun; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan E-mail: drlife@kookmin.ac.kr; Lim, Jun-Hyung; Lee, Je-Hun; Ahn, Byung Du E-mail: drlife@kookmin.ac.kr; Kim, Yong-Sung

    2014-10-13

    The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model, in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy V{sub O}{sup 2+} or peroxide O{sub 2}{sup 2−} with the increase of EOT. It was also found that the V{sub O}{sup 2+}-related extrinsic factor accounts for 80%–92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O{sub 2}{sup 2–} related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The key founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.

  9. Fundamentals of Modern VLSI Devices

    NASA Astrophysics Data System (ADS)

    Taur, Yuan; Ning, Tak H.

    1998-10-01

    This book examines in detail the basic properties and design, including chip integration, of CMOS and bipolar VLSI devices and discusses the various factors that affect their performance. The authors begin with a thorough review of the relevant aspects of semiconductor physics, and proceed to a description of the design of CMOS and bipolar devices. The optimization of these devices for VLSI applications is also covered. The authors highlight the intricate interdependencies and subtle tradeoffs between those device parameters, such as power consumption and packing density, that affect circuit performance and manufacturability. They also discuss in detail the scaling, and physical limits to the scaling, of CMOS and bipolar devices. The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practicing engineers involved in research and development in the electronics industry.

  10. Reducing Risks Associated with Medical Device Misconnections

    MedlinePlus

    ... Devices Radiation-Emitting Products Vaccines, Blood & Biologics Animal & Veterinary Cosmetics Tobacco Products Medical Devices Home Medical Devices ... Devices Radiation-Emitting Products Vaccines, Blood & Biologics Animal & Veterinary Cosmetics Tobacco Products

  11. Safe-haven locking device

    DOEpatents

    Williams, J.V.

    1984-04-26

    Disclosed is a locking device for eliminating external control of a secured space formed by fixed and movable barriers. The locking device uses externally and internally controlled locksets and a movable strike, operable from the secured side of the movable barrier, to selectively engage either lockset. A disengagement device, for preventing forces from being applied to the lock bolts is also disclosed. In this manner, a secured space can be controlled from the secured side as a safe-haven. 4 figures.

  12. New Italian device registration requirements.

    PubMed

    Donawa, Maria

    2008-01-01

    A medical device manufacturer located outside Europe was informed by an Italian distributor that the European Authorised Representative must designate the distributor as the authorised entity when registering the manufacturer's devices in Italy in a new online data bank. This is incorrect. This article discusses the new requirements for registering medical devices in Italy, together with the steps in the registration process and common problems encountered.

  13. High mobility bottom gate InGaZnO thin film transistors with SiO{sub x} etch stopper

    SciTech Connect

    Kim, Minkyu; Jeong, Jong Han; Lee, Hun Jung; Ahn, Tae Kyung; Shin, Hyun Soo; Park, Jin-Seong; Jeong, Jae Kyeong; Mo, Yeon-Gon; Kim, Hye Dong

    2007-05-21

    The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching. To prevent plasma damage to the active channel, a 100-nm-thick SiO{sub x} layer deposited by plasma enhanced chemical vapor deposition was adopted as an etch stopper structure. The a-IGZO TFT (W/L=10 {mu}m/50 {mu}m) fabricated on glass exhibited a high field-effect mobility of 35.8 cm{sup 2}/V s, a subthreshold gate swing value of 0.59 V/decade, a thrseshold voltage of 5.9 V, and an I{sub on/off} ratio of 4.9x10{sup 6}, which is acceptable for use as the switching transistor of an active-matrix TFT backplane.

  14. New optical coupler devices

    NASA Astrophysics Data System (ADS)

    Ramadan, Tarek Abd-Elazim

    2000-06-01

    New optical coupler devices have been designed with both analytical and numerical simulation tools. Using these tools, design rules were derived for both 3dB and full adiabatic couplers. The design rules are in excellent agreement with numerical calculations using the beam propagation method (BPM). It is shown that the length scaling for the 3dB adiabatic couplers compared to full adiabatic couplers makes the former more difficult to design. The design in each case is optimized to obtain an upper limit of performance. A comparison is carried out between two different design geometries to select the optimum adiabatic coupler design which requires the shortest length for a given coupler performance. An improvement in, the fabrication tolerance of the optimum design has yielded a new more-tolerant 3dB adiabatic- coupler, which is distinguished by a coupler region where both waveguide width and separation are tapered. A novel 1 x 4 coupler-multiplexer permutation switch (CMPS) is proposed for applications in wavelength- division-multiplexing (WDM) networks. The CMPS integrates the functions of a 1 x 4 multiplexer followed by a 4 x 4 switch-array in a single compact device. It consists of a single-mode/multimode-waveguide grating-assisted backward-coupler multiplexer followed by a digital optical switch (DOS). Two different InP-based designs of the CMPS, which use InGaAsP/InP multiple-quantum well (MQW) output waveguides, are introduced. In both of these designs, the CMPS channels are unequally spaced which reduces unwanted four-wave mixing. Finally the electro-optic response is measured in single- crystal LiNbO 3 thin films obtained by crystal-ion-slicing (CIS). This technique uses ion implantation of singlecrystal bulk samples followed by selective etching. Post liftoff annealing (PLA) is shown to be a key step in improving the light transmission properties of these films for hybriddevice applications. It is shown that PLA must be used, as opposed to pre- liftoff

  15. Thermoelectric device exhibiting decreased stress

    SciTech Connect

    Heath, D.L.; Chou, D.J.

    1985-02-05

    A thermoelectric device exhibiting both structural integrity and decreased stress across the device notwithstanding the application of thermally cycled temperature differentials thereacross includes, electrically interconnected thermoelectric elements and a rigidly affixed substrate. Thermal stress is relieved by using flexible conductors to interconnect the thermoelectric elements, and by the use of a flexile joint to attach a second substrate to the remainder of the device. Complete elimination of the second substrate may also be used to eliminate stress. Presence of the rigidly affixed substrate gives the device sufficient structural integrity to enable it to withstand rugged conditions.

  16. Plasma detachment in linear devices

    NASA Astrophysics Data System (ADS)

    Ohno, N.

    2017-03-01

    Plasma detachment research in linear devices, sometimes called divertor plasma simulators, is reviewed. Pioneering works exploring the concept of plasma detachment were conducted in linear devices. Linear devices have contributed greatly to the basic understanding of plasma detachment such as volume plasma recombination processes, detached plasma structure associated with particle and energy transport, and other related issues including enhancement of convective plasma transport, dynamic response of plasma detachment, plasma flow reversal, and magnetic field effect. The importance of plasma detachment research using linear devices will be highlighted aimed at the design of future DEMO.

  17. Microbiopsy/precision cutting devices

    DOEpatents

    Krulevitch, Peter A.; Lee, Abraham P.; Northrup, M. Allen; Benett, William J.

    1999-01-01

    Devices for performing tissue biopsy on a small scale (microbiopsy). By reducing the size of the biopsy tool and removing only a small amount of tissue or other material in a minimally invasive manner, the risks, costs, injury and patient discomfort associated with traditional biopsy procedures can be reduced. By using micromachining and precision machining capabilities, it is possible to fabricate small biopsy/cutting devices from silicon. These devices can be used in one of four ways 1) intravascularly, 2) extravascularly, 3) by vessel puncture, and 4) externally. Additionally, the devices may be used in precision surgical cutting.

  18. Silicon nanowires as intracellular devices

    NASA Astrophysics Data System (ADS)

    Zimmerman, John F.

    Semiconductor nanowire devices are an exciting class of materials for biomedical and electrophysiology applications, with current studies primarily delivering substrate bound devices through mechanical abrasion or electroporation. However, the ability to distribute these devices in a drug-like fashion is an important step in developing next-generation active therapeutic devices. In this work, we will discuss the interaction of label free Silicon nanowires (SiNWs) with cellular systems, showing that they can be internalized in multiple cell lines, and undergo an active 'burst-like' transport process. (Abstract shortened by ProQuest.).

  19. Microbiopsy/precision cutting devices

    DOEpatents

    Krulevitch, P.A.; Lee, A.P.; Northrup, M.A.; Benett, W.J.

    1999-07-27

    Devices are disclosed for performing tissue biopsy on a small scale (microbiopsy). By reducing the size of the biopsy tool and removing only a small amount of tissue or other material in a minimally invasive manner, the risks, costs, injury and patient discomfort associated with traditional biopsy procedures can be reduced. By using micromachining and precision machining capabilities, it is possible to fabricate small biopsy/cutting devices from silicon. These devices can be used in one of four ways (1) intravascularly, (2) extravascularly, (3) by vessel puncture, and (4) externally. Additionally, the devices may be used in precision surgical cutting. 6 figs.

  20. 78 FR 34669 - Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and Data...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-10

    ... COMMISSION Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and Data... importation of certain electronic devices, including wireless communication devices, portable music and data..., California (``Apple''), from importing wireless communication devices, portable music and data...

  1. 21 CFR 886.1290 - Fixation device.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... DEVICES OPHTHALMIC DEVICES Diagnostic Devices § 886.1290 Fixation device. (a) Identification. A fixation device is an AC-powered device intended for use as a fixation target for the patient during ophthalmological examination. The patient directs his or her gaze so that the visual image of the object falls...

  2. 21 CFR 886.1290 - Fixation device.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... DEVICES OPHTHALMIC DEVICES Diagnostic Devices § 886.1290 Fixation device. (a) Identification. A fixation device is an AC-powered device intended for use as a fixation target for the patient during ophthalmological examination. The patient directs his or her gaze so that the visual image of the object falls...

  3. 21 CFR 886.1290 - Fixation device.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... DEVICES OPHTHALMIC DEVICES Diagnostic Devices § 886.1290 Fixation device. (a) Identification. A fixation device is an AC-powered device intended for use as a fixation target for the patient during ophthalmological examination. The patient directs his or her gaze so that the visual image of the object falls...

  4. 21 CFR 886.1290 - Fixation device.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... DEVICES OPHTHALMIC DEVICES Diagnostic Devices § 886.1290 Fixation device. (a) Identification. A fixation device is an AC-powered device intended for use as a fixation target for the patient during ophthalmological examination. The patient directs his or her gaze so that the visual image of the object falls...

  5. 21 CFR 886.1290 - Fixation device.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... DEVICES OPHTHALMIC DEVICES Diagnostic Devices § 886.1290 Fixation device. (a) Identification. A fixation device is an AC-powered device intended for use as a fixation target for the patient during ophthalmological examination. The patient directs his or her gaze so that the visual image of the object falls...

  6. Cable load sensing device

    DOEpatents

    Beus, Michael J.; McCoy, William G.

    1998-01-01

    Apparatus for sensing the magnitude of a load on a cable as the cable is employed to support the load includes a beam structure clamped to the cable so that a length of the cable lies along the beam structure. A spacer associated with the beam structure forces a slight curvature in a portion of the length of cable under a cable "no-load" condition so that the portion of the length of cable is spaced from the beam structure to define a cable curved portion. A strain gauge circuit including strain gauges is secured to the beam structure by welding. As the cable is employed to support a load the load causes the cable curved portion to exert a force normal to the cable through the spacer and on the beam structure to deform the beam structure as the cable curved portion attempts to straighten under the load. As this deformation takes place, the resistance of the strain gauges is set to a value proportional to the magnitude of the normal strain on the beam structure during such deformation. The magnitude of the normal strain is manipulated in a control device to generate a value equal to the magnitude or weight of the load supported by the cable.

  7. Temperature differential detection device

    DOEpatents

    Girling, Peter M.

    1986-01-01

    A temperature differential detection device for detecting the temperature differential between predetermined portions of a container wall is disclosed as comprising a Wheatstone bridge circuit for detecting resistance imbalance with a first circuit branch having a first elongated wire element mounted in thermal contact with a predetermined portion of the container wall, a second circuit branch having a second elongated wire element mounted in thermal contact with a second predetermined portion of a container wall with the wire elements having a predetermined temperature-resistant coefficient, an indicator interconnected between the first and second branches remote from the container wall for detecting and indicating resistance imbalance between the first and second wire elements, and connector leads for electrically connecting the wire elements to the remote indicator in order to maintain the respective resistance value relationship between the first and second wire elements. The indicator is calibrated to indicate the detected resistance imbalance in terms of a temperature differential between the first and second wall portions.

  8. Temperature differential detection device

    DOEpatents

    Girling, P.M.

    1986-04-22

    A temperature differential detection device for detecting the temperature differential between predetermined portions of a container wall is disclosed as comprising a Wheatstone bridge circuit for detecting resistance imbalance with a first circuit branch having a first elongated wire element mounted in thermal contact with a predetermined portion of the container wall, a second circuit branch having a second elongated wire element mounted in thermal contact with a second predetermined portion of a container wall with the wire elements having a predetermined temperature-resistant coefficient, an indicator interconnected between the first and second branches remote from the container wall for detecting and indicating resistance imbalance between the first and second wire elements, and connector leads for electrically connecting the wire elements to the remote indicator in order to maintain the respective resistance value relationship between the first and second wire elements. The indicator is calibrated to indicate the detected resistance imbalance in terms of a temperature differential between the first and second wall portions. 2 figs.

  9. Energy recovery device

    SciTech Connect

    Evans, V.

    1982-08-31

    The energy recovery device includes a housing having a central shaft which is connected to a lever operating a work-load system capable of generating work-load forces. The central shaft is also connected to a disk having four posts generally parallel to the shaft and initially located at positions corresponding to the four major points of a compass. Within each corner of the housing, a helically coiled spring is positioned over a support post. Each spring has two extending arms which contact two respective adjacent posts on the disk so as to maintain the spring under tension. When the lever is at the neutral position, I.E., when no work-load forces are generated, the recovery forces generated by the four springs within the housing are generally balanced. As the lever is displaced from the neutral position by a driving force, the disk rotates whereby the angular displacement between the arms of any spring decreases. Once the disk is displaced, the spring forces aid in continuing displacement of the disk. Simultaneously the work-load system generates forces which oppose any displacement. The springs are preferably configured and dimensioned so that, at any given displacement of the lever from the neutral position, the recovery forces generally counterbalance the work-load forces. Thus the lever will remain at a given displacement when the driving force applied to the lever is removed. Additionally, the counterbalancing of forces permits continued displacement of the lever with a minimal and constant driving force.

  10. Device for improved combustion

    SciTech Connect

    Polomchak, R.W.; Yacko, M.

    1988-03-08

    A device for improved combustion is described comprising: a tubular housing member having a first end and a second end, the first and second ends each having a circular opening therethrough; a combustion chamber disposed about the second end of the-tubular-housing member; a first conduit member extending from the first end of the tubular housing member and in fluid communication with the circular opening in the first end of the tubular housing member so as to allow the passage of air therethrough; a second conduit member axially disposed within the first conduit member and extending through the first conduit member and through the tubular housing member to the circular opening the second end of the tubular housing member so as to allow the passage of fuel therethrough; means for effecting turbulence in the air passing through the tubular housing member; means for effecting turbulence in the fuel passing through the second conduit member; means for intermixing and emitting the turbulent air and the fuel in a mushroom shaped configuration with the turbulent air surrounding the mushroom shaped configuration so as to substantially eliminate noxious waste gases as by-product of combustion of the air and fuel mixture.

  11. Wellhead flow control devices

    SciTech Connect

    McLean, D.K.

    1981-09-15

    A wellhead flow control device includes a main flow control valve and associated packings designed for operation under extreme conditions associated with the pumping of high viscosity asphaltic crude wherein the formation includes toxic gases. The formation is produced using steam flooding techniques. The main valve seat and the associated valve closure, consisting of a reciprocating ram and packing plug, are coaxial with the pump polished rod. The valve seat icludes tapered walls defining a shoulder which partially confronts the ram plug. The ram plug is formed of a compressible material formed to the shape of the valve seat. The packing plug is retained on the end of the ram by axial tie rods and a retaining ring. The ring may engage the valve seat shoulder to effect axial compression of the packing plug between the retaining ring and ram face, with consequent radial expansion into the sealing engagement. The ram is reciprocated axially, either manually or hydraulically relative to the ram body. A packing gland, suitable to seal against toxic gases, is provided between the ram and valve body. A rod packing, at the upper end of the ram, includes a primary adjustable packing gland for sealing between the ram and the reciprocating polished rod. 41 claims.

  12. Defects and device performance

    NASA Technical Reports Server (NTRS)

    Storti, G.; Armstrong, R.; Johnson, S.; Lin, H. C.; Regnault, W.; Yoo, K. C.

    1985-01-01

    The necessity for a low-cost crystalline silicon sheet material for photovoltaics has generated a number of alternative crystal growth techniques that would replace Czochralski (Cz) and float-zone (FZ) technologies. Efficiencies of devices fabricated from low resistivity FZ silicon are approaching 20%, and it is highly likely that this value will be superseded in the near future. However, FZ silicon is expensive, and is unlikely ever to be used for photovoltaics. Cz silicon has many of the desirable qualities of FZ except that minority-carrier lifetimes at lower resistivities are significantly less than those of FZ silicon. Even with Cz silicon, it is unlikely that cost goals can be met because of the poor-material yield that results from sawing and other aspects of the crystal rowth. Although other silicon sheet technologies have been investigated, almost all have characteristics that limit efficiency to approx. 16%. In summary, 20% efficient solar cells can likely be fabricated from both FZ and Cz silicon, but costs are likely to be ultimately unacceptable. Alternate silicon technologies are not likely to achieve this goal, but cost per watt figures may be eventually better than either of the single crystal technologies and may rival any thin-film technology.

  13. Material bagging device

    DOEpatents

    Wach, Charles G.; Nelson, Robert E.; Brak, Stephen B.

    1984-01-01

    A bagging device for transferring material from one chamber through an opening in a wall to a second chamber includes a cylindrical housing communicating with the opening and defining a passage between the chambers. A cylindrical cartridge is slidably received within the housing. The cartridge has a substantially rigid cylindrical sleeve to which is affixed a pliable tube. The pliable tube is positioned concentrically about the sleeve and has a pleated portion capable of unfolding from the sleeve and a closed end extending over a terminal end of the sleeve. Sealing means are interposed in sealed relationship between the cartridge and the housing. Material from one chamber is inserted into the cartridge secured in the housing and received in the closed end of the tube which unfolds into the other chamber enclosing the material therein. The tube may then be sealed behind the material and then severed to form a bag-like enclosure defined by the tube's closed terminal end and the new seal. The new seal then forms a terminal end for the unsevered portion of the pliable tube into which additional material may be placed and the bagging process repeated.

  14. Fuel injection device

    SciTech Connect

    Ohmori, T.; Nakatsuka, H.; Kanou, H.

    1987-03-31

    A fuel injection device is described for injecting fuel into a combustion chamber of an internal combustion engine, comprising: a body having first and second bores formed therein and extending in the axial direction thereof; a delivering plunger fitted into the first bore and defining a delivering pump chamber therein; driving means for reciprocating the delivering plunger in synchronism to the engine; pressurized medium supplying means for supplying a pressurized medium under a constant pressure to the delivering pump chamber, the pressurized medium supplying means including a pressurized medium source and a control passage linking the pressurized medium source to the delivering pump chamber; an electromagnetic valve provided on the control passage for opening and closing the control passage; and an injection plunger fitted into the second bore and defining, in the second bore, a linking chamber communicating with the delivering pump chamber and an injection pump chamber, the linking chamber and the delivering chamber becoming a liquid-tight chamber when the electromagnetic valve closes the control passage.

  15. Prosthetic iris devices.

    PubMed

    Srinivasan, Sathish; Ting, Darren S J; Snyder, Michael E; Prasad, Somdutt; Koch, Hans-Reinhard

    2014-02-01

    Congenital iris defects may usually present either as subtotal aniridia or colobomatous iris defects. Acquired iris defects are secondary to penetrating iris injury, iatrogenic after surgical excision of iris tumours, collateral trauma after anterior segment surgery, or can be postinflammatory in nature. These iris defects can cause severe visual disability in the form of glare, loss of contrast sensitivity, and loss of best corrected visual acuity. The structural loss of iris can be reconstructed with iris suturing, use of prosthetic iris implants, or by a combination of these, depending on the relative amount of residual iris stromal tissue and health of the underlying pigment epithelium. Since the first implant of a black iris diaphragm posterior chamber intraocular lens in 1994, advances in material and design technology over the last decade have led to advances in the prosthetic material, surgical technique, and instrumentation in the field of prosthetic iris implants. In this article, we review the classification of iris defects, types of iris prosthetic devices, implantation techniques, and complications.

  16. Improved Thermoelectric Devices: Advanced Semiconductor Materials for Thermoelectric Devices

    SciTech Connect

    2009-12-11

    Broad Funding Opportunity Announcement Project: Phononic Devices is working to recapture waste heat and convert it into usable electric power. To do this, the company is using thermoelectric devices, which are made from advanced semiconductor materials that convert heat into electricity or actively remove heat for refrigeration and cooling purposes. Thermoelectric devices resemble computer chips, and they manage heat by manipulating the direction of electrons at the nanoscale. These devices aren’t new, but they are currently too inefficient and expensive for widespread use. Phononic Devices is using a high-performance, cost-effective thermoelectric design that will improve the device’s efficiency and enable electronics manufacturers to more easily integrate them into their products.

  17. OLED devices with internal outcoupling

    DOEpatents

    Liu, Jie Jerry; Sista, Srinivas Prasad; Shi, Xiaolei; Zhao, Ri-An; Chichak, Kelly Scott; Youmans, Jeffrey Michael; Janora, Kevin Henry; Turner, Larry Gene

    2015-03-03

    Optoelectronic devices that have enhanced internal outcoupling are disclosed. The devices include a substrate, an anode, a cathode, an electroluminescent layer, and a hole injecting layer. The hole injecting layer includes inorganic nanoparticles that have a bimodal particle size distribution and which are dispersed in an organic matrix.

  18. A Device with Learning Capability.

    ERIC Educational Resources Information Center

    Sotina, N. M.; Burlai, Yu. P.

    The invention involves a device with learning capacity which contains input, storage, arithmetic and output units. In order to increase the number of recognizable patterns, facilitate replacement of one pattern by another, and also increase the speed of the device, the memory unit for the input field is connected to memory units for storage of…

  19. Micromachined devices for interfacing neurons

    NASA Astrophysics Data System (ADS)

    Stieglitz, Thomas; Beutel, Hansjoerg; Blau, Cornelia; Meyer, Joerg-Uwe

    1998-07-01

    Micromachining technologies were established to fabricate microelectrode arrays and devices for interfacing parts of the central or peripheral nervous system. The devices were part of a neural prosthesis that allows simultaneous multichannel recording and multisite stimulation of neurons. Overcoming the brittle mechanics of silicon devices and challenging housing demands close to the nerve we established a process technology to fabricate light-weighted and highly flexible polyimide based devices. Platinum and iridium thin-film electrodes were embedded in the polyimide. With reactive ion etching we got the possibility to simply integrate interconnections and to form nearly arbitrary outer shapes of the devices. We designed multichannel devices with up to 24 electrodes in the shape of plates, hooks and cuffs for different applications. In vitro tests exhibited stable electrode properties and no cytotoxicity of the materials and the devices. Sieve electrodes were chronically implanted in rats to interface the regenerating sciatic nerve. After six months, recordings and stimulation of the nerve via electrodes on the micro-device proved functional reinnervation of the limb. Concentric circular structures were designed for a retina implant for the blind. In preliminary studies in rabbits, evoked potentials in the visual cortex corresponded to stimulation sites of the implant.

  20. A SURVEY OF AUTOINSTRUCTIONAL DEVICES.

    ERIC Educational Resources Information Center

    KOPSTEIN, FELIX F.; SHILLESTAD, ISABEL J.

    THE STATE OF THE ART OF AUTOINSTRUCTION AND TEACHING DEVICES IS SUMMARIZED, AND INSTRUCTIONAL DEVICES DEVELOPED THROUGH APRIL 1961 ARE CATALOGED WITH THE AIM OF SUGGESTING POSSIBLE APPLICATIONS TO LOCAL TRAINING OR EDUCATIONAL PROBLEMS. IN THE FIRST SECTION, AN OVERVIEW OF AUTOINSTRUCTION IS PRESENTED. THE INSTRUCTIONAL PRESENTATION IS AIMED AT…

  1. Adaptive Devices and the Computer.

    ERIC Educational Resources Information Center

    Taber, Florence M.

    1986-01-01

    Guidelines for selecting appropriate assistive devices which afford disabled individuals access to computers are presented. In general, the individual who is to use the computer must be evaluated first to ensure that the adaptive device makes the most efficient use of his/her muscle control, mobility, reflexes, etc. (CB)

  2. Dynamic-reservoir lubricating device

    NASA Technical Reports Server (NTRS)

    Ficken, W. H.; Schulien, H. E.

    1968-01-01

    Dynamic-reservoir lubricating device supplies controlled amounts of lubricating oil to ball bearings during operation of the bearings. The dynamic reservoir lubricating device includes a rotating reservoir nut, a hollow cylinder filled with lubricating oil, flow restrictors and a ball bearing retainer.

  3. Jaw bite force measurement device.

    PubMed

    Flanagan, Dennis; Ilies, Horea; O'Brien, Brendan; McManus, Anne; Larrow, Beau

    2012-08-01

    We describe a cost-effective device that uses an off-the-shelf force transducer to measure patient bite force as a diagnostic aid in determining dental implant size, number of implants, and prosthetic design for restoring partial edentulism. The main advantages of the device are its accuracy, simplicity, modularity, ease of manufacturing, and low cost.

  4. Electrical latching of microelectromechanical devices

    DOEpatents

    Garcia, Ernest J.; Sleefe, Gerard E.

    2004-11-02

    Methods are disclosed for row and column addressing of an array of microelectromechanical (MEM) devices. The methods of the present invention are applicable to MEM micromirrors or memory elements and allow the MEM array to be programmed and maintained latched in a programmed state with a voltage that is generally lower than the voltage required for electrostatically switching the MEM devices.

  5. Nanoscale wicking methods and devices

    NASA Technical Reports Server (NTRS)

    Zhou, Jijie (Inventor); Bronikowski, Michael (Inventor); Noca, Flavio (Inventor); Sansom, Elijah B. (Inventor)

    2011-01-01

    A fluid transport method and fluid transport device are disclosed. Nanoscale fibers disposed in a patterned configuration allow transport of a fluid in absence of an external power source. The device may include two or more fluid transport components having different fluid transport efficiencies. The components may be separated by additional fluid transport components, to control fluid flow.

  6. Wound Healing Devices Brief Vignettes

    PubMed Central

    Anderson, Caesar A.; Hare, Marc A.; Perdrizet, George A.

    2016-01-01

    Significance: The demand for wound care therapies is increasing. New wound care products and devices are marketed at a dizzying rate. Practitioners must make informed decisions about the use of medical devices for wound healing therapy. This paper provides updated evidence and recommendations based on a review of recent publications. Recent Advances: The published literature on the use of medical devices for wound healing continues to support the use of hyperbaric oxygen therapy, negative pressure wound therapy, and most recently electrical stimulation. Critical Issue: To inform wound healing practitioners of the evidence for or against the use of medical devices for wound healing. This information will aid the practitioner in deciding which technology should be accepted or rejected for clinical use. Future Directions: To produce high quality, randomized controlled trials or acquire outcome-based registry databases to further test and improve the knowledge base as it relates to the use of medical devices in wound care. PMID:27076996

  7. Pyrotechnic devices and their applications

    NASA Astrophysics Data System (ADS)

    Himelblau, Harry

    2002-05-01

    Pyroshock is mechanical shock transmitted through structures from explosive devices, sometimes accompanied by structural impact. These devices are designed to cause the intentional separation of structures, or to cause the deployment of various mechanisms or subsystems required for mission operation. Separation devices usually fall into two categories: (a) line sources, such as linear shaped charges, and (b) point sources, such as explosive bolts, pin puller and pushers, and gas generators. The advantages of these devices are high reliability (especially when redundantly activated), low cost and weight, high activation speed, and low structural deformation a short distance from the source. The major limitation is pyroshock, a severe high-frequency transient capable of causing failure or malfunction to small nearby elements, especially electronic and optical components located close to the source. This pyroshock tutorial, which is intended to summarize recent improvements to the technology, is initiated with a review of explosive and companion devices.

  8. Automatic Mechetronic Wheel Light Device

    DOEpatents

    Khan, Mohammed John Fitzgerald

    2004-09-14

    A wheel lighting device for illuminating a wheel of a vehicle to increase safety and enhance aesthetics. The device produces the appearance of a "ring of light" on a vehicle's wheels as the vehicle moves. The "ring of light" can automatically change in color and/or brightness according to a vehicle's speed, acceleration, jerk, selection of transmission gears, and/or engine speed. The device provides auxiliary indicator lights by producing light in conjunction with a vehicle's turn signals, hazard lights, alarm systems, and etc. The device comprises a combination of mechanical and electronic components and can be placed on the outer or inner surface of a wheel or made integral to a wheel or wheel cover. The device can be configured for all vehicle types, and is electrically powered by a vehicle's electrical system and/or battery.

  9. Ergonomic material-handling device

    DOEpatents

    Barsnick, Lance E.; Zalk, David M.; Perry, Catherine M.; Biggs, Terry; Tageson, Robert E.

    2004-08-24

    A hand-held ergonomic material-handling device capable of moving heavy objects, such as large waste containers and other large objects requiring mechanical assistance. The ergonomic material-handling device can be used with neutral postures of the back, shoulders, wrists and knees, thereby reducing potential injury to the user. The device involves two key features: 1) gives the user the ability to adjust the height of the handles of the device to ergonomically fit the needs of the user's back, wrists and shoulders; and 2) has a rounded handlebar shape, as well as the size and configuration of the handles which keep the user's wrists in a neutral posture during manipulation of the device.

  10. Impacting device for testing insulation

    NASA Technical Reports Server (NTRS)

    Redmon, J. W. (Inventor)

    1984-01-01

    An electro-mechanical impacting device for testing the bonding of foam insulation to metal is descirbed. The device lightly impacts foam insulation attached to metal to determine whether the insulation is properly bonded to the metal and to determine the quality of the bond. A force measuring device, preferably a load cell mounted on the impacting device, measures the force of the impact and the duration of the time the hammer head is actually in contact with the insulation. The impactor is designed in the form of a handgun having a driving spring which can propel a plunger forward to cause a hammer head to impact the insulation. The device utilizes a trigger mechanism which provides precise adjustements, allowing fireproof operation.

  11. Triboluminescent tamper-indicating device

    DOEpatents

    Johnston, Roger G.; Garcia, Anthony R. E.

    2002-01-01

    A tamper-indicating device is described. The device has a transparent or translucent cylindrical body that includes triboluminescent material, and an outer opaque layer that prevents ambient light from entering. A chamber in the body holds an undeveloped piece of photographic film bearing an image. The device is assembled from two body members. One of the body members includes a recess for storing film and an optical assembly that can be adjusted to prevent light from passing through the assembly and exposing the film. To use the device with a hasp, the body members are positioned on opposite sides of a hasp, inserted through the hasp, and attached. The optical assembly is then manipulated to allow any light generated from the triboluminescent materials during a tampering activity that damages the device to reach the film and destroy the image on the film.

  12. High voltage semiconductor devices and methods of making the devices

    DOEpatents

    Matocha, Kevin; Chatty, Kiran; Banerjee, Sujit

    2017-02-28

    A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type well regions which are formed in an n-type drift layer. A p-type body contact region is formed on the periphery of the MOSFET. The source metallization of the device forms a Schottky contact with an n-type semiconductor region adjacent the p-type body contact region of the device. Vias can be formed through a dielectric material covering the source ohmic contacts and/or Schottky region of the device and the source metallization can be formed in the vias. The n-type semiconductor region forming the Schottky contact and/or the n-type source regions can be a single continuous region or a plurality of discontinuous regions alternating with discontinuous p-type body contact regions. The device can be a SiC device. Methods of making the device are also provided.

  13. Advanced Modeling of Micromirror Devices

    NASA Technical Reports Server (NTRS)

    Michalicek, M. Adrian; Sene, Darren E.; Bright, Victor M.

    1995-01-01

    The flexure-beam micromirror device (FBMD) is a phase only piston style spatial light modulator demonstrating properties which can be used for phase adaptive corrective optics. This paper presents a complete study of a square FBMD, from advanced model development through final device testing and model verification. The model relates the electrical and mechanical properties of the device by equating the electrostatic force of a parallel-plate capacitor with the counter-acting spring force of the device's support flexures. The capacitor solution is derived via the Schwartz-Christoffel transformation such that the final solution accounts for non-ideal electric fields. The complete model describes the behavior of any piston-style device, given its design geometry and material properties. It includes operational parameters such as drive frequency and temperature, as well as fringing effects, mirror surface deformations, and cross-talk from neighboring devices. The steps taken to develop this model can be applied to other micromirrors, such as the cantilever and torsion-beam designs, to produce an advanced model for any given device. The micromirror devices studied in this paper were commercially fabricated in a surface micromachining process. A microscope-based laser interferometer is used to test the device in which a beam reflected from the device modulates a fixed reference beam. The mirror displacement is determined from the relative phase which generates a continuous set of data for each selected position on the mirror surface. Plots of this data describe the localized deflection as a function of drive voltage.

  14. Radiology of cardiac devices and their complications

    PubMed Central

    Dipoce, J; Spindola-Franco, H

    2015-01-01

    This article familiarizes the reader with several different cardiac devices including pacemakers and implantable cardioverter defibrillators, intra-aortic balloon pumps, ventricular assist devices, valve replacements and repairs, shunt-occluding devices and passive constraint devices. Many cardiac devices are routinely encountered in clinical practice. Other devices are in the early stages of development, but circumstances suggest that they too will become commonly found. The radiologist must be familiar with these devices and their complications. PMID:25411826

  15. A study of trap-limited conduction influenced by plasma damage on the source/drain regions of amorphous InGaZnO TFTs

    NASA Astrophysics Data System (ADS)

    Hsu, Chih-Chieh; Sun, Jhen-Kai; Wu, Chien-Hsun

    2014-11-01

    This study investigated electrical characteristics and stability variations of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs) with plasma damage on their source/drain (S/D) regions. The influence of the plasma damage on the TFT performance is absent as the channel length is 36-100 μm. When the channel length is decreased to 3-5 μm, the mobility (μ ) of the bottom gate TFT (BG TFT) with plasma damage is significantly degraded to 0.6 cm2 (V s)-1, which is much lower than 4.3 cm2 (V s)-1 of a damage-free BG TFT. We utilized the TFT passivation layer and the indium tin oxide (ITO), which was used as the pixel electrode material in the TFT backplane, to be the top gate insulator and top gate electrode of the defective BG TFT to obtain the defective dual-gate TFT. The mobility can be restored to 5.1 cm2 (V s)-1. Additional process steps are not required. Besides, this method is easily implemented and is fully compatible with TFT backplane fabrication process. The transfer curves, hysteresis characteristics, stabilities under constant voltage stress and constant current stress tests were measured to give evidences that the traps created by the plasma damage on the S/D regions indeed can affect electron transport. This trap-limited conduction can be improved by using the top gate. It was proven that the top gate was not for contributing an observably additional current. It was for inducing electrons to electrically passivate the plasma-induced defects near the back channel. Thus, the trapping/detrapping of the electrons transporting in the front channel can be reduced. The trap density near the Fermi level, hopping distance and hopping energy are 1.1  ×  1018 cm-3 eV-1, 162 Å, and 52 meV for the BG TFT with plasma damage on the S/D regions.

  16. A study of trap-limited conduction influenced by plasma damage on the source/drain regions of amorphous InGaZnO TFTs

    NASA Astrophysics Data System (ADS)

    Hsu, Chih-Chieh; Sun, Jhen-Kai; Wu, Chien-Hsun

    2015-11-01

    This study investigated electrical characteristics and stability variations of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs) with plasma damage on their source/drain (S/D) regions. The influence of the plasma damage on the TFT performance is absent as the channel length is 36-100 μm. When the channel length is decreased to 3-5 μm, the mobility (μ ) of the bottom gate TFT (BG TFT) with plasma damage is significantly degraded to 0.6 cm2 (V s)-1, which is much lower than 4.3 cm2 (V s)-1 of a damage-free BG TFT. We utilized the TFT passivation layer and the indium tin oxide (ITO), which was used as the pixel electrode material in the TFT backplane, to be the top gate insulator and top gate electrode of the defective BG TFT to obtain the defective dual-gate TFT. The mobility can be restored to 5.1 cm2 (V s)-1. Additional process steps are not required. Besides, this method is easily implemented and is fully compatible with TFT backplane fabrication process. The transfer curves, hysteresis characteristics, stabilities under constant voltage stress and constant current stress tests were measured to give evidences that the traps created by the plasma damage on the S/D regions indeed can affect electron transport. This trap-limited conduction can be improved by using the top gate. It was proven that the top gate was not for contributing an observably additional current. It was for inducing electrons to electrically passivate the plasma-induced defects near the back channel. Thus, the trapping/detrapping of the electrons transporting in the front channel can be reduced. The trap density near the Fermi level, hopping distance and hopping energy are 1.1  ×  1018 cm-3 eV-1, 162 Å, and 52 meV for the BG TFT with plasma damage on the S/D regions.

  17. 49 CFR 179.220-17 - Gauging devices, top loading and unloading devices, venting and air inlet devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 3 2011-10-01 2011-10-01 false Gauging devices, top loading and unloading devices, venting and air inlet devices. 179.220-17 Section 179.220-17 Transportation Other Regulations Relating to... and 115AW) § 179.220-17 Gauging devices, top loading and unloading devices, venting and air...

  18. 49 CFR 179.220-17 - Gauging devices, top loading and unloading devices, venting and air inlet devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 49 Transportation 2 2010-10-01 2010-10-01 false Gauging devices, top loading and unloading devices, venting and air inlet devices. 179.220-17 Section 179.220-17 Transportation Other Regulations Relating to... DOT-111AW and 115AW) § 179.220-17 Gauging devices, top loading and unloading devices, venting and...

  19. Handheld ultrasound array imaging device

    NASA Astrophysics Data System (ADS)

    Hwang, Juin-Jet; Quistgaard, Jens

    1999-06-01

    A handheld ultrasound imaging device, one that weighs less than five pounds, has been developed for diagnosing trauma in the combat battlefield as well as a variety of commercial mobile diagnostic applications. This handheld device consists of four component ASICs, each is designed using the state of the art microelectronics technologies. These ASICs are integrated with a convex array transducer to allow high quality imaging of soft tissues and blood flow in real time. The device is designed to be battery driven or ac powered with built-in image storage and cineloop playback capability. Design methodologies of a handheld device are fundamentally different to those of a cart-based system. As system architecture, signal and image processing algorithm as well as image control circuit and software in this device is deigned suitably for large-scale integration, the image performance of this device is designed to be adequate to the intent applications. To elongate the battery life, low power design rules and power management circuits are incorporated in the design of each component ASIC. The performance of the prototype device is currently being evaluated for various applications such as a primary image screening tool, fetal imaging in Obstetrics, foreign object detection and wound assessment for emergency care, etc.

  20. Biocompatibility of implantable biomedical devices

    NASA Astrophysics Data System (ADS)

    Lyu, Suping

    2008-03-01

    Biomedical devices have been broadly used to treat human disease, especially chronic diseases where pharmaceuticals are less effective. Heart valve and artificial joint are examples. Biomedical devices perform by delivering therapies such as electric stimulations, mechanical supports and biological actions. While the uses of biomedical devices are highly successful they can trigger adverse biological reactions as well. The property that medical devices perform with intended functions but not causing unacceptable adverse effects was called biocompatibility in the early time. As our understanding of biomaterial-biological interactions getting broader, biocompatibility has more meanings. In this talk, I will present some adverse biological reactions observed with implantable biomedical devices. Among them are surface fouling of implantable sensors, calcification with vascular devices, restenosis with stents, foreign particle migration and mechanical fractures of devices due to inflammation reactions. While these effects are repeatable, there are very few quantitative data and theories to define them. The purpose of this presentation is to introduce this biocompatibility concept to biophysicists to stimulate research interests at different angles. An open question is how to quantitatively understand the biocompatibility that, like many other biological processes, has not been quantified experimentally.

  1. Control method for prosthetic devices

    NASA Technical Reports Server (NTRS)

    Bozeman, Richard J., Jr. (Inventor)

    1995-01-01

    A control system and method for prosthetic devices is provided. The control system comprises a transducer for receiving movement from a body part for generating a sensing signal associated with that movement. The sensing signal is processed by a linearizer for linearizing the sensing signal to be a linear function of the magnitude of the distance moved by the body part. The linearized sensing signal is normalized to be a function of the entire range of body part movement from the no-shrug position of the moveable body part. The normalized signal is divided into a plurality of discrete command signals. The discrete command signals are used by typical converter devices which are in operational association with the prosthetic device. The converter device uses the discrete command signals for driving the moveable portions of the prosthetic device and its sub-prosthesis. The method for controlling a prosthetic device associated with the present invention comprises the steps of receiving the movement from the body part, generating a sensing signal in association with the movement of the body part, linearizing the sensing signal to be a linear function of the magnitude of the distance moved by the body part, normalizing the linear signal to be a function of the entire range of the body part movement, dividing the normalized signal into a plurality of discrete command signals, and implementing the plurality of discrete command signals for driving the respective moveable prosthesis device and its sub-prosthesis.

  2. Optimization of Micromachined Photon Devices

    SciTech Connect

    Datskos, P.G.; Datskou, I.; Evans, B.M., III; Rajic, S.

    1999-07-18

    The Oak Ridge National Laboratory has been instrumental in developing ultraprecision technologies for the fabrication of optical devices. We are currently extending our ultraprecision capabilities to the design, fabrication, and testing of micro-optics and MEMS devices. Techniques have been developed in our lab for fabricating micro-devices using single point diamond turning and ion milling. The devices we fabricated can be used in micro-scale interferometry, micro-positioners, micro-mirrors, and chemical sensors. In this paper, we focus on the optimization of microstructure performance using finite element analysis and the experimental validation of those results. We also discuss the fabrication of such structures and the optical testing of the devices. The performance is simulated using finite element analysis to optimize geometric and material parameters. The parameters we studied include bimaterial coating thickness effects; device length, width, and thickness effects, as well as changes in the geometry itself. This optimization results in increased sensitivity of these structures to absorbed incoming energy, which is important for photon detection or micro-mirror actuation. We have investigated and tested multiple geometries. The devices were fabricated using focused ion beam milling, and their response was measured using a chopped photon source and laser triangulation techniques. Our results are presented and discussed.

  3. Probing a Device's Active Atoms.

    PubMed

    Studniarek, Michał; Halisdemir, Ufuk; Schleicher, Filip; Taudul, Beata; Urbain, Etienne; Boukari, Samy; Hervé, Marie; Lambert, Charles-Henri; Hamadeh, Abbass; Petit-Watelot, Sebastien; Zill, Olivia; Lacour, Daniel; Joly, Loïc; Scheurer, Fabrice; Schmerber, Guy; Da Costa, Victor; Dixit, Anant; Guitard, Pierre André; Acosta, Manuel; Leduc, Florian; Choueikani, Fadi; Otero, Edwige; Wulfhekel, Wulf; Montaigne, François; Monteblanco, Elmer Nahuel; Arabski, Jacek; Ohresser, Philippe; Beaurepaire, Eric; Weber, Wolfgang; Alouani, Mébarek; Hehn, Michel; Bowen, Martin

    2017-03-13

    Materials science and device studies have, when implemented jointly as "operando" studies, better revealed the causal link between the properties of the device's materials and its operation, with applications ranging from gas sensing to information and energy technologies. Here, as a further step that maximizes this causal link, the paper focuses on the electronic properties of those atoms that drive a device's operation by using it to read out the materials property. It is demonstrated how this method can reveal insight into the operation of a macroscale, industrial-grade microelectronic device on the atomic level. A magnetic tunnel junction's (MTJ's) current, which involves charge transport across different atomic species and interfaces, is measured while these atoms absorb soft X-rays with synchrotron-grade brilliance. X-ray absorption is found to affect magnetotransport when the photon energy and linear polarization are tuned to excite FeO bonds parallel to the MTJ's interfaces. This explicit link between the device's spintronic performance and these FeO bonds, although predicted, challenges conventional wisdom on their detrimental spintronic impact. The technique opens interdisciplinary possibilities to directly probe the role of different atomic species on device operation, and shall considerably simplify the materials science iterations within device research.

  4. High voltage MOSFET devices and methods of making the devices

    DOEpatents

    Banerjee, Sujit; Matocha, Kevin; Chatty, Kiran

    2015-12-15

    A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+ region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.

  5. Electrically Variable Resistive Memory Devices

    NASA Technical Reports Server (NTRS)

    Liu, Shangqing; Wu, Nai-Juan; Ignatiev, Alex; Charlson, E. J.

    2010-01-01

    Nonvolatile electronic memory devices that store data in the form of electrical- resistance values, and memory circuits based on such devices, have been invented. These devices and circuits exploit an electrically-variable-resistance phenomenon that occurs in thin films of certain oxides that exhibit the colossal magnetoresistive (CMR) effect. It is worth emphasizing that, as stated in the immediately preceding article, these devices function at room temperature and do not depend on externally applied magnetic fields. A device of this type is basically a thin film resistor: it consists of a thin film of a CMR material located between, and in contact with, two electrical conductors. The application of a short-duration, low-voltage current pulse via the terminals changes the electrical resistance of the film. The amount of the change in resistance depends on the size of the pulse. The direction of change (increase or decrease of resistance) depends on the polarity of the pulse. Hence, a datum can be written (or a prior datum overwritten) in the memory device by applying a pulse of size and polarity tailored to set the resistance at a value that represents a specific numerical value. To read the datum, one applies a smaller pulse - one that is large enough to enable accurate measurement of resistance, but small enough so as not to change the resistance. In writing, the resistance can be set to any value within the dynamic range of the CMR film. Typically, the value would be one of several discrete resistance values that represent logic levels or digits. Because the number of levels can exceed 2, a memory device of this type is not limited to binary data. Like other memory devices, devices of this type can be incorporated into a memory integrated circuit by laying them out on a substrate in rows and columns, along with row and column conductors for electrically addressing them individually or collectively.

  6. Fabrication and characterization of thin-film transistor materials and devices

    NASA Astrophysics Data System (ADS)

    Hong, David

    A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d 10ns0 (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers via reactive sputtering from a metal target, and the characterization of indium gallium zinc oxide (IGZO)-based TFTs utilizing various insulator materials as the gate dielectric. The first topic involves the deposition of oxide semiconductor layers via reactive sputtering from a metal target. Two oxide semiconductors are utilized for fabricating TFTs via reactive sputtering from a metal target: zinc oxide and zinc tin oxide. With optimized processing parameters, zinc oxide and zinc tin oxide via this deposition method exhibit similar characteristics to TFTs fabricated via sputtering from a ceramic target. Additionally the effects of gate capacitance density and gate dielectric material are explored utilizing TFTs with IGZO as the semiconductor layers. IGZO-based TFTs exhibit ideal behavior with improved TFT performance such as higher current drive at a given overvoltage, a decrease in the subthreshold swing, and a decrease in the magnitude of the turn-on voltage. Additionally it is shown that silicon dioxide is the preferred dielectric material, with silicon nitride a poor choice for oxide-based TFTs. Finally a simple method to characterize the band tail state distribution near the conduction band minimum of a semiconductor by analyzing two-terminal current-voltage characteristics of a TFT with a floating gate is presented. The characteristics trap energy (ET) as a function of post-deposition annealing temperature is shown to correlate very well with IGZO TFT performance, with a lower value of E T, corresponding to a more abrupt distribution of band tail states, correlating with improved TFT mobility

  7. Streamline-based microfluidic device

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Zheng, Siyang (Inventor); Kasdan, Harvey (Inventor)

    2013-01-01

    The present invention provides a streamline-based device and a method for using the device for continuous separation of particles including cells in biological fluids. The device includes a main microchannel and an array of side microchannels disposed on a substrate. The main microchannel has a plurality of stagnation points with a predetermined geometric design, for example, each of the stagnation points has a predetermined distance from the upstream edge of each of the side microchannels. The particles are separated and collected in the side microchannels.

  8. Recent medical devices for tonsillectomy.

    PubMed

    Sayin, I; Cingi, C

    2012-01-01

    The most frequent and probably the earliest described surgical intervention of ENT field is tonsillectomy. Various methods were described and devices were invented up to now in order to increase safety and decrease time consumption and complications. All new created devices promises lower intraoperative blood loss, intraoperative time, postoperative pain and bleeding. But with their widely use it is seen that they cannot fulfill what they promise. Debate also continues as to which technique yields the best outcome. This study reports a summary for common medical devices which were previously used in tonsillectomy.

  9. USB Mass Storage Device Manager

    SciTech Connect

    Rymer, Bernard; Cowart, Casey

    2004-06-17

    The USB probram is designed to give some level of control over the use of USB mass storage devices (MSDs). This program allows you to disable all USB MSDs from working on a machine or to configure specific devices for the machine as an administrator. For complete control over USB MSDs the user of the machine must belong to the 'User' group. If a MSD has already been configured on the machine it will continue to function after using the 'Activate Administrator Control' function. The only way to disable previously configured devices is to use the 'Block' feature to block all MSDs from being used on the machine.

  10. Split ring containment attachment device

    DOEpatents

    Sammel, Alfred G.

    1996-01-01

    A containment attachment device 10 for operatively connecting a glovebag 200 to plastic sheeting 100 covering hazardous material. The device 10 includes an inner split ring member 20 connected on one end 22 to a middle ring member 30 wherein the free end 21 of the split ring member 20 is inserted through a slit 101 in the plastic sheeting 100 to captively engage a generally circular portion of the plastic sheeting 100. A collar potion 41 having an outer ring portion 42 is provided with fastening means 51 for securing the device 10 together wherein the glovebag 200 is operatively connected to the collar portion 41.

  11. 21 CFR 874.5840 - Antistammering device.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Antistammering device. 874.5840 Section 874.5840 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES EAR, NOSE, AND THROAT DEVICES Therapeutic Devices § 874.5840 Antistammering device....

  12. 21 CFR 874.5840 - Antistammering device.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Antistammering device. 874.5840 Section 874.5840 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES EAR, NOSE, AND THROAT DEVICES Therapeutic Devices § 874.5840 Antistammering device....

  13. 21 CFR 874.5840 - Antistammering device.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Antistammering device. 874.5840 Section 874.5840 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES EAR, NOSE, AND THROAT DEVICES Therapeutic Devices § 874.5840 Antistammering device....

  14. OCDR guided laser ablation device

    DOEpatents

    Dasilva, Luiz B.; Colston, Jr., Bill W.; James, Dale L.

    2002-01-01

    A guided laser ablation device. The device includes a mulitmode laser ablation fiber that is surrounded by one or more single mode optical fibers that are used to image in the vicinity of the laser ablation area to prevent tissue damage. The laser ablation device is combined with an optical coherence domain reflectometry (OCDR) unit and with a control unit which initializes the OCDR unit and a high power laser of the ablation device. Data from the OCDR unit is analyzed by the control unit and used to control the high power laser. The OCDR images up to about 3 mm ahead of the ablation surface to enable a user to see sensitive tissue such as a nerve or artery before damaging it by the laser.

  15. OLED devices with internal outcoupling

    DOEpatents

    Liu, Jr., Jie Jerry; Sista, Srinivas Prasad; Shi, Xiaolei; Zhao, Ri-An; Chichak, Kelly Scott; Youmans, Jeffrey Michael; Janora, Kevin Henry; Turner, Larry Gene

    2016-12-06

    Optoelectronic devices with enhanced internal outcoupling include a substrate, an anode, a cathode, an electroluminescent layer, and an electron transporting layer comprising inorganic nanoparticles dispersed in an organic matrix.

  16. Fluidic-thermochromic display device

    NASA Technical Reports Server (NTRS)

    Grafstein, D.; Hilborn, E. H.

    1968-01-01

    Fluidic decoder and display device has low-power requirements for temperature control of thermochromic materials. An electro-to-fluid converter translates incoming electrical signals into pneumatics signal of sufficient power to operate the fluidic logic elements.

  17. Heart failure - surgeries and devices

    MedlinePlus

    ... is weakened, gets too large, and does not pump blood very well, you are at high risk for abnormal heartbeats that can lead to sudden cardiac death. An implantable cardioverter-defibrillator (ICD) is a device that detects ...

  18. Marine Thermoelectric Devices and Installations,

    DTIC Science & Technology

    thermoelectric devices and units as marine sources of electric power, Prospects for the use of thermoelectric generators in main ship propulsion plants, Electric propulsion complexes for marine thermoelectric plants).

  19. High-temperature-measuring device

    DOEpatents

    Not Available

    1981-01-27

    A temperature measuring device for very high design temperatures (to 2000/sup 0/C) is described. The device comprises a homogenous base structure preferably in the form of a sphere or cylinder. The base structure contains a large number of individual walled cells. The base structure has a decreasing coefficient of elasticity within the temperature range being monitored. A predetermined quantity of inert gas is confined within each cell. The cells are dimensonally stable at the normal working temperature of the device. Increases in gaseous pressure within the cells will permanently deform the cell walls at temperatures within the high temperature range to be measured. Such deformation can be correlated to temperature by calibrating similarly constructed devices under known time and temperature conditions.

  20. Prototype of sun projector device

    NASA Astrophysics Data System (ADS)

    Ihsan; Dermawan, B.

    2016-11-01

    One way to introduce astronomy to public, including students, can be handled by solar observation. The widely held device for this purpose is coelostat and heliostat. Besides using filter attached to a device such as telescope, it is safest to use indirect way for observing the Sun. The main principle of the indirect way is deflecting the sun light and projecting image of the sun on a screen. We design and build a simple and low-cost astronomical device, serving as a supplement to increase public service, especially for solar observation. Without using any digital and intricate supporting equipment, people can watch and relish image of the Sun in comfortable condition, i.e. in a sheltered or shady place. Here we describe a design and features of our prototype of the device, which still, of course, has some limitations. In the future, this prototype can be improved for more efficient and useful applications.