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Sample records for a-igzo tft device

  1. Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping

    PubMed Central

    2014-01-01

    In this study, InGaZnO (IGZO) thin film transistors (TFTs) with a dual active layer (DAL) structure are fabricated by inserting a homogeneous embedded conductive layer (HECL) in an amorphous IGZO (a-IGZO) channel with the aim of enhancing the electrical characteristics of conventional bottom-gate-structure TFTs. A highly conductive HECL (carrier concentration at 1.6 × 1013 cm-2, resistivity at 4.6 × 10-3 Ω∙cm, and Hall mobility at 14.6 cm2/Vs at room temperature) is fabricated using photochemical H-doping by irradiating UV light on an a-IGZO film. The electrical properties of the fabricated DAL TFTs are evaluated by varying the HECL length. The results reveal that carrier mobility increased proportionally with the HECL length. Further, a DAL TFT with a 60-μm-long HECL embedded in an 80-μm-long channel exhibits comprehensive and outstanding improvements in its electrical properties: a saturation mobility of 60.2 cm2/Vs, threshold voltage of 2.7 V, and subthreshold slope of 0.25 V/decade against the initial values of 19.9 cm2/Vs, 4.7 V, and 0.45 V/decade, respectively, for a TFT without HECL. This result confirms that the photochemically H-doped HECL significantly improves the electrical properties of DAL IGZO TFTs. PMID:25435832

  2. Self-assembled transparent a-IGZO based TFTs for flexible sensing applications

    NASA Astrophysics Data System (ADS)

    Li, Yuanjie; Liu, Yanghui; Yun, Feng; Yang, Yaodong; Wan, Qing

    2014-07-01

    In this work, transparent amorphous InGaZnO (a-IGZO) thin films have been deposited on quartz glass substrates using RF magnetron sputtering at room temperature at the O2 flow rate from 0 to 4 sccm. Electrical transport properties and optical transmittance of the a-IGZO films strongly depend on O2/Ar flow rate ratio. Electrical conductivity of the a- IGZO films dramatically decreases from semiconducting to semi-insulating with increasing the O2 flow rate above 1 sccm. Optical transmittance of the a-IGZO films, however, has been improved up to 85% by increasing O2 flow rate. Amorphous IGZO-based thin film transistors have been developed on indium-tin-oxide glass substrates with the phosphorus doped nanogranular SiO2 film of ~800 nm deposited by plasma-enhanced chemical vapor deposition at room temperature as the gate dielectric layer. The accumulation of protons at the IGZO/SiO2 interface induces a large electricdouble- layer capacitance. Enhancement-mode IGZO/SiO2/ITO TFT devices with field effect mobility of 10.5 cm2/Vs and low threshold voltage of 0.7 V have been achieved. Furthermore, a-IGZO TFT devices exhibit subthreshold swing of 70 mV/dec and Ion/off of 1.5x106. Optical transmission spectra show that the a-IGZO thin film transistors arrays on glass substrates is highly transparent with optical transmittance above 80%.

  3. ICP-Enhanced Sputter Deposition for Reactivity Control and Low-Temperature Formation of a-IGZO Films

    NASA Astrophysics Data System (ADS)

    Setsuhara, Yuichi; Nakata, Keitaro; Satake, Yoshikatsu; Takenaka, Kosuke; Uchida, Giichiro; Ebe, Akinori

    2015-09-01

    Inductively coupled plasma (ICP) - enhanced sputter deposition for a-IGZO channel TFTs fabrication have been performed. This advantage of fine control of reactivity during the deposition process is of great significance for film deposition of the transparent amorphous oxide semiconductor, a-InGaZnOx (a-IGZO), whose electrical properties are significantly sensitive to the reactivity during the film deposition. The a-IGZO film deposition with addition of H2 gas were performed in order to control oxidation process during a-IGZO film formation via balance between oxidation-reduction. The results of optical emission spectrum indicate the possibility for the suppression of oxidation by oxygen atoms of a-IGZO films during deposition due to addition of H2 gas. The characteristics of TFT fabricated with IGZO film via plasma-enhanced magnetron sputter deposition system have been investigated. The result exhibits that the possibility of expanding process window for control of balance between oxidization and reduction by addition of H2 gas. The a-IGZO channel TFTs fabricated plasma-enhanced reactive sputtering system with addition of H2 gas exhibited good performance of field-effect mobility 15.3 cm2(Vs)-1 and subthreshold gate voltage swing (S) of 0.48 V decade-1. This work was partly supported by ASTEP (JST) and Grant-in-Aid for Challenging Exploratory Research (JSPS).

  4. Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO) as a pH sensitive layer for applications in field effect based sensors

    NASA Astrophysics Data System (ADS)

    Kumar, Narendra; Kumar, Jitendra; Panda, Siddhartha

    2015-06-01

    The use of a-IGZO instead of the conventional high-k dielectrics as a pH sensitive layer could lead to the simplification of fabrication steps of field effect based devices. In this work, the pH sensitivities of a-IGZO films directly deposited over a SiO2/Si surface were studied utilizing electrolyte-insulator-semiconductor (EIS) structures. Annealing of the films was found to affect the sensitivity of the devices and the device with the film annealed at 400 oC in N2 ambience showed the better sensitivity, which reduced with further increase in the annealing temperature to 500 oC. The increased pH sensitivity with the film annealed at 400 oC in N2 gas was attributed to the enhanced lattice oxygen ions (based on the XPS data) and improved C-V characteristics, while the decrease in sensitivity at an increased annealing temperature of 500 oC was attributed to defects in the films as well as the induced traps at the IGZO/SiO2 interface based on the stretched accumulation and the peak in the inversion region of C-V curves. This study could help to develop a sensor where the material (a-IGZO here) used as the active layer in a thin film transistors (TFTs) possibly could also be used as the pH sensitive layer without affecting the TFT characteristics, and thus obviating the need of high-K dielectrics for sensitivity enhancement.

  5. Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors

    PubMed Central

    2013-01-01

    In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs, a small subthreshold swing of 143 mV/decade, and a high Ion/Ioff current ratio of 4.23 × 107, presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er2TiO5 film. Furthermore, the reliability of voltage stress can be improved using an Er2TiO5 gate dielectric. PMID:23294730

  6. Device and Circuit Level Optimization for High Performance a-Si:H TFT-Based AMOLED Displays

    NASA Astrophysics Data System (ADS)

    Sambandan, Sanjiv; Striakhilev, Denis; Nathan, Arokia

    2006-03-01

    Active matrix organic light-emitting diode (AMOLED) displays with amorphous hydrogenated silicon (a-Si:H) thin-film transistor (TFT) backplanes are becoming the state of art in display technology. Though a-Si:H TFTs suffer from an intrinsic device instability, which inturn leads to an instability in pixel brightness, there have been many pixel driving methods that have been introduced to counter this. However, there are issues with these circuits which limit their applicability in terms of speed and resolution. This paper highlights these issues and provides detailed design considerations for the choice of pixel driver circuits in general. In particular, we discuss the circuit and device level optimization of the pixel driver circuit in a-Si:H TFT AMOLED, displays for high gray scale accuracy, subject to constraints of power consumption, and temporal and spatial resolution.

  7. RF sputtering deposited a-IGZO films for LCD alignment layer application

    NASA Astrophysics Data System (ADS)

    Wu, G. M.; Liu, C. Y.; Sahoo, A. K.

    2015-11-01

    In this paper, amorphous indium gallium zinc oxide (a-IGZO) inorganic films were deposited at a fixed oblique angle using radio-frequency sputtering on indium tin oxide (ITO) glass as alternative alignment layer for liquid crystal displays. A series of experiments have been carried out to reveal the physical characteristics of the a-IGZO films, such as optical transmittance, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The special treatment a-IGZO films were used to fabricate liquid crystal (LC) cells and investigate the performances of these cells. Pretilt angles were measured with anti-parallel LC cells and voltage-transmittance (V-T) curve, contrast ratio, and response time were evaluated with optically compensated bend (OCB) LC cells. The electro-optical characteristics of the aligned homogenous LCs, and OCB mode cells based on the a-IGZO alignment layer were compared to those based on rubbing processed polyimide (PI). The results showed that the average transmittance in the visible wavelength range was higher than 90% for the a-IGZO alignment layer. The LC pretilt angle has been determined at about 6°. The evaluted cell critical voltage at maximum transmittance was 1.8 V, lower than the control cell using PI alignment layer. The OCB cell rise time and fall time were 1.55 ms and 3.49 ms, respectivly. A very quick response time of 5.04 ms has thus been achived. In addition, the study of V-T characteristics suggested higher contrast ratio for LCD display applications.

  8. Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

    NASA Astrophysics Data System (ADS)

    Tang, Lan-Feng; Yu, Guang; Lu, Hai; Wu, Chen-Fei; Qian, Hui-Min; Zhou, Dong; Zhang, Rong; Zheng, You-Dou; Huang, Xiao-Ming

    2015-08-01

    The influence of white light illumination on the stability of an amorphous InGaZnO thin film transistor is investigated in this work. Under prolonged positive gate bias stress, the device illuminated by white light exhibits smaller positive threshold voltage shift than the device stressed under dark. There are simultaneous degradations of field-effect mobility for both stressed devices, which follows a similar trend to that of the threshold voltage shift. The reduced threshold voltage shift under illumination is explained by a competition between bias-induced interface carrier trapping effect and photon-induced carrier detrapping effect. It is further found that white light illumination could even excite and release trapped carriers originally exiting at the device interface before positive gate bias stress, so that the threshold voltage could recover to an even lower value than that in an equilibrium state. The effect of photo-excitation of oxygen vacancies within the a-IGZO film is also discussed. Project supported by the State Key Program for Basic Research of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China.

  9. Polysilicon TFT fabrication on plastic substrates

    SciTech Connect

    Carey, P.G.; Smith, P.M.; Wickboldt, P.W.; Thompson, M.O.; Sigmon, T.W.

    1997-08-06

    Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).

  10. High-performance hybrid complementary logic inverter through monolithic integration of a MEMS switch and an oxide TFT.

    PubMed

    Song, Yong-Ha; Ahn, Sang-Joon Kenny; Kim, Min-Wu; Lee, Jeong-Oen; Hwang, Chi-Sun; Pi, Jae-Eun; Ko, Seung-Deok; Choi, Kwang-Wook; Park, Sang-Hee Ko; Yoon, Jun-Bo

    2015-03-25

    A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain. PMID:25418881

  11. SLM-based maskless lithography for TFT-LCD

    NASA Astrophysics Data System (ADS)

    Kim, Kwang-Ryul; Yi, Junsin; Cho, Sung-Hak; Kang, Nam-Hyun; Cho, Myung-Woo; Shin, Bo-Sung; Choi, Byoungdeog

    2009-06-01

    Maskless photolithographic methods have been developed using digital micromirror devices (DMDs) and grating light valves (GLVs), which are spatial light modulators (SLMs), because liquid crystal display (LCD) panel industries spend huge amounts of money for the cost of TFT (thin film resist)-LCD photomasks. The technology has been developed for implementing 2 μm bitmap resolutions, which is a requirement for the lithographic process, though the process time is still slow for mass-production system. A DMD-based maskless exposure uses 405 nm-wavelength semiconductor lasers as an illumination source and optical engines that contain DMDs, micro lens arrays (MLAs), and projection lenses. A GLV-based system consists of UV lasers and optical write engines, which are constructed with the GLV, grating optics, and imaging lenses. Since many companies have been trying to overcome the time limitations, the maskless technology will be realized in the LCD industry in near future.

  12. Influence of TFT-LCD pixel structure on holographic representation

    NASA Astrophysics Data System (ADS)

    Wang, Hongjun; Wang, Zhao; Tian, Ailing; Liu, Bingcai

    2008-09-01

    As a new holographic display device, TFT-LCD (Thin Film Transistor Liquid Crystal Displays) is key technical component of holographic representation for easy controlled by computer. With the development of exquisite processing technology, that it instead of the traditional holographic plate become historical necessity and would be the development direction of holographic optics. Based on principles of holography and display character of LCD, the property which the LCD was used as a holographic plate was analyzed. The emphasis on discuss influence of LCD black matrix on holographic representation. First, analyzed on LCD pixel structure, the LCD pixel structure mathematical model was established. LCD was character representation by pixel structure parameters. Then, the influence of LCD pixels structure on holographic representation was analyzed by computer simulation. Meanwhile, the SONY LCX023 was chosen for holographic plate, the He-Ne laser which the wavelength is 0.6328um was holographic representation light source. The holographic representation system was established for test influence of LCD on holographic representation. Final, compared between computer simulations and optical experimental results, the mathematical model of LCD was proved to be true. When aperture ratio is 0.625, the holographic representation wouldn't be distinguished between representation images. At the same time, some useful results was acquired for improve application effects of LCD in holographic representation.

  13. Investigation of tow-step electrical degradation behavior in a-InGaZnO thin-film transistors with Sm2O3 gate dielectrics

    NASA Astrophysics Data System (ADS)

    Chen, Fa-Hsyang; Her, Jim-Long; Hung, Meng-Ning; Pan, Tung-Ming

    2013-07-01

    We investigate the electrical stress-induced instability in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with Sm2O3 gate dielectrics. Tow-step electrical degradation behavior in Sm2O3 a-IGZO TFT devices was found under high gate and drain voltage stress during 1000 s. A typical small positive shift followed by an unusual negative shift of threshold voltage is characterized in our TFT devices. We believe that the positive shift of the threshold voltage is due to charge trapping in the gate dielectric and/or at the channel/dielectric interfaces, while the negative shift of threshold voltage can be attributed to the generation of extra electrons from oxygen vacancies in the a-IGZO channel. We suggested that the amount of oxygen vacancies and the quality of the high-κ gate dielectric probably affect the degradation behavior of a-IGZO TFT devices.

  14. Fabrication of amorphous InGaZnO thin-film transistor-driven flexible thermal and pressure sensors

    NASA Astrophysics Data System (ADS)

    Park, Ick-Joon; Jeong, Chan-Yong; Cho, In-Tak; Lee, Jong-Ho; Cho, Eou-Sik; Kwon, Sang Jik; Kim, Bosul; Cheong, Woo-Seok; Song, Sang-Hun; Kwon, Hyuck-In

    2012-10-01

    In this work, we present the results concerning the use of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) as a driving transistor of the flexible thermal and pressure sensors which are applicable to artificial skin systems. Although the a-IGZO TFT has been attracting much attention as a driving transistor of the next-generation flat panel displays, no study has been performed about the application of this new device to the driving transistor of the flexible sensors yet. The proposed thermal sensor pixel is composed of the series-connected a-IGZO TFT and ZnO-based thermistor fabricated on a polished metal foil, and the ZnO-based thermistor is replaced by the pressure sensitive rubber in the pressure sensor pixel. In both sensor pixels, the a-IGZO TFT acts as the driving transistor and the temperature/pressure-dependent resistance of the ZnO-based thermistor/pressure-sensitive rubber mainly determines the magnitude of the output currents. The fabricated a-IGZO TFT-driven flexible thermal sensor shows around a seven times increase in the output current as the temperature increases from 20 °C to 100 °C, and the a-IGZO TFT-driven flexible pressure sensors also exhibit high sensitivity under various pressure environments.

  15. Area-mura detection in TFT-LCD panel

    NASA Astrophysics Data System (ADS)

    Choi, Kyu N.; Lee, Jae Y.; Yoo, Suk I.

    2004-04-01

    TFT-LCD generally has the intrinsic non-uniformity due to the variance of the backlight. The region that has the perceptible non-uniformity is defined as a defect, called area-mura. In this paper, we present a new segmentation method for detecting area-mura. We first extract candidates of area-muras using regression diagnostics and then select the real area-muras among those candidates based on the size and SEMU index, a measure of contrast based on human brightness perception. Performance of the presented method has been evaluated on those TFT-LCD panel samples provided by Samsung Electronics Co., Ltd.

  16. High-resolution TFT-LCD for spatial light modulator

    NASA Astrophysics Data System (ADS)

    Lee, JaeWon; Kim, Yong-Hae; Byun, Chun-Won; Pi, Jae-Eun; Oh, Himchan; Kim, GiHeon; Lee, Myung-Lae; Chu, Hye-Yong; Hwang, Chi-Sun

    2014-06-01

    SLM with very fine pixel pitch is needed for the holographic display system. Among various kinds of SLMs, commercially available high resolution LCoS has been widely used as a spatial light modulator. But the size of commercially available LCoS SLM is limited because the manufacturing technology of LCoS is based on the semiconductor process developed on small size Si wafer. Recently very high resolution flat panel display panel (~500ppi) was developed as a "retina display". Until now, the pixel pitch of flat panel display is several times larger than the pixel pitch of LCoS. But considering the possibility of shrink down the pixel pitch with advanced lithographic tools, the application of flat panel display will make it possible to build a SLM with high spatial bandwidth product. We simulated High resolution TFT-LCD panel on glass substrate using oxide semiconductor TFT with pixel pitch of 20um. And we considered phase modulation behavior of LC(ECB) mode. The TFT-LCD panel is reflective type with 4-metal structure with organic planarization layers. The technical challenge for high resolution large area SLM will be discussed with very fine pixel.

  17. Characterization of Chlorophenol 4-Monooxygenase (TftD) and NADH:Flavin Adenine Dinucleotide Oxidoreductase (TftC) of Burkholderia cepacia AC1100

    PubMed Central

    Gisi, Michelle R.; Xun, Luying

    2003-01-01

    Burkholderia cepacia AC1100 uses 2,4,5-trichlorophenoxyacetic acid, an environmental pollutant, as a sole carbon and energy source. Chlorophenol 4-monooxygenase is a key enzyme in the degradation of 2,4,5-trichlorophenoxyacetic acid, and it was originally characterized as a two-component enzyme (TftC and TftD). Sequence analysis suggests that they are separate enzymes. The two proteins were separately produced in Escherichia coli, purified, and characterized. TftC was an NADH:flavin adenine dinucleotide (FAD) oxidoreductase. A C-terminally His-tagged fusion TftC used NADH to reduce either FAD or flavin mononucleotide (FMN) but did not use NADPH or riboflavin as a substrate. Kinetic and binding property analysis showed that FAD was a better substrate than FMN. TftD was a reduced FAD (FADH2)-utilizing monooxygenase, and FADH2 was supplied by TftC. It converted 2,4,5-trichlorophenol to 2,5-dichloro-p-quinol and then to 5-chlorohydroxyquinol but converted 2,4,6-trichlorophenol only to 2,6-dichloro-p-quinol as the final product. TftD interacted with FADH2 and retarded its rapid oxidation by O2. A spectrum of possible TftD-bound FAD-peroxide was identified, indicating that the peroxide is likely the active oxygen species attacking the aromatic substrates. The reclassification of the two enzymes further supports the new discovery of FADH2-utilizing enzymes, which have homologues in the domains Bacteria and Archaea. PMID:12700257

  18. Synthesis, Characterization and TFT Characteristics of Diketopyrrolopyrrole Based Copolymer.

    PubMed

    Bathula, Chinna; Jeong, Seunghoon; Chung, Jeyon; Kang, Youngjong

    2016-03-01

    A novel diketopyrrolopyrrole (DPP) based low band gap polymer, poly[4,8-bis(triisopropylsilylethynyl) benzo[1,2-b:4,5-b']dithiophene-2,6-diyl-alt-[2,5-di-hexyl-3,6-dithiophen-2-ylpyrrolo[3,4-c]pyrrole-1,4-dione] (PTIPSBDT-DPP) is synthesized by Stille polymerization for use in thin film transistor (TFTs). The new polymer contain extended aromatic π-conjugated segments alternating with the DPP units and are designed to increase the free energy for charge generation to overcome current limitations in photocurrent generation. In this study we describe the synthesis, thermal stability, optical, electrochemical properties and TFT characteristics. PMID:27455711

  19. Fabrication of InGaZnO Nonvolatile Memory Devices at Low Temperature of 150 degrees C for Applications in Flexible Memory Displays and Transparency Coating on Plastic Substrates.

    PubMed

    Hanh, Nguyen Hong; Jang, Kyungsoo; Yi, Junsin

    2016-05-01

    We directly deposited amorphous InGaZnO (a-IGZO) nonvolatile memory (NVM) devices with oxynitride-oxide-dioxide (OOO) stack structures on plastic substrate by a DC pulsed magnetron sputtering and inductively coupled plasma chemical vapor deposition (ICPCVD) system, using a low-temperature of 150 degrees C. The fabricated bottom gate a-IGZO NVM devices have a wide memory window with a low operating voltage during programming and erasing, due to an effective control of the gate dielectrics. In addition, after ten years, the memory device retains a memory window of over 73%, with a programming duration of only 1 ms. Moreover, the a-IGZO films show high optical transmittance of over 85%, and good uniformity with a root mean square (RMS) roughness of 0.26 nm. This film is a promising candidate to achieve flexible displays and transparency on plastic substrates because of the possibility of low-temperature deposition, and the high transparent properties of a-IGZO films. These results demonstrate that the a-IGZO NVM devices obtained at low-temperature have a suitable programming and erasing efficiency for data storage under low-voltage conditions, in combination with excellent charge retention characteristics, and thus show great potential application in flexible memory displays. PMID:27483835

  20. Dependence of Grain Size on the Performance of a Polysilicon Channel TFT for 3D NAND Flash Memory.

    PubMed

    Kim, Seung-Yoon; Park, Jong Kyung; Hwang, Wan Sik; Lee, Seung-Jun; Lee, Ki-Hong; Pyi, Seung Ho; Cho, Byung Jin

    2016-05-01

    We investigated the dependence of grain size on the performance of a polycrystalline silicon (poly-Si) channel TFT for application to 3D NAND Flash memory devices. It has been found that the device performance and memory characteristics are strongly affected by the grain size of the poly-Si channel. Higher on-state current, faster program speed, and poor endurance/reliability properties are observed when the poly-Si grain size is large. These are mainly attributed to the different local electric field induced by an oxide valley at the interface between the poly-Si channel and the gate oxide. In addition, the trap density at the gate oxide interface was successfully measured using a charge pumping method by the separation between the gate oxide interface traps and traps at the grain boundaries in the poly-Si channel. The poly-Si channel with larger grain size has lower interface trap density. PMID:27483868

  1. Surface defect inspection of TFT-LCD panels based on 1D Fourier method

    NASA Astrophysics Data System (ADS)

    Zhang, Teng-da; Lu, Rong-sheng

    2016-01-01

    Flat panel displays have been used in a wide range of electronic devices. The defects on their surfaces are an important factor affecting the product quality. Automated optical inspection (AOI) method is an important and effective means to perform the surface defection inspection. In this paper, a kind of defect extraction algorithm based on one dimensional (1D) Fourier theory for the surface defect extraction with periodic texture background is introduced. In the algorithm, the scanned surface images are firstly transformed from time domain to frequency domain by 1D Fourier transform. The periodic texture background on the surface is then removed by using filtering methods in the frequency domain. Then, a dual-threshold statistical control method is applied to separate the defects from the surface background. Traditional 1D Fourier transform scheme for detecting ordinary defects is very effective; however, the method is not where the defect direction is close to horizontal in periodic texture background. In order to tackle the problem, a mean threshold method based on faultless image is put forward. It firstly calculates the upper and lower control limits of the every reconstructed line scanned image with faultless and then computes the averages of the upper and lower limits. The averages then act as the constant double thresholds to extract the defects. The experimental results of different defects show that the method developed in the paper is very effective for TFT-LCD panel surface defect inspection even in the circumstance that the defect directions are close to horizontal.

  2. Photometric and colorimetric measurements of CRT and TFT monitors for vision research

    NASA Astrophysics Data System (ADS)

    Klein, Johann; Zlatkova, Margarita; Lauritzen, Jan; Pierscionek, Barbara

    2013-08-01

    Visual displays have various limitations that can affect the results of vision research experiments. This study compares several characteristics of CRT (Hewlett Packard 7650) and TFT (LG Flatron L227 WT and Samsung 2233 RZ) monitors, including luminance and colour spatial homogeneity, luminance changes with viewing angle, contrast linearity and warm-up characteristics. In addition, the psychophysical performance in grating contrast sensitivity test for both CRT and TFT monitors was compared. The TFT monitors demonstrated spatial non-homogeneity ('mura') with up to 50% of luminance change across the screen and a more significant luminance viewing angle dependence compared with CRT. The chromaticity of the white point showed negligible variation across the screen. Both types of monitors required a warm-up time of the order of 60 min. Despite the physical differences between monitors, visual contrast sensitivity performance measured with the two types of monitors was similar using both static and flickering gratings.

  3. Tomato TFT1 is required for PAMP-triggered immunity and mutations that prevent T3S effector XopN from binding to TFT1 attenuate Xanthomonas virulence.

    PubMed

    Taylor, Kyle W; Kim, Jung-Gun; Su, Xue B; Aakre, Chris D; Roden, Julie A; Adams, Christopher M; Mudgett, Mary Beth

    2012-01-01

    XopN is a type III effector protein from Xanthomonas campestris pathovar vesicatoria that suppresses PAMP-triggered immunity (PTI) in tomato. Previous work reported that XopN interacts with the tomato 14-3-3 isoform TFT1; however, TFT1's role in PTI and/or XopN virulence was not determined. Here we show that TFT1 functions in PTI and is a XopN virulence target. Virus-induced gene silencing of TFT1 mRNA in tomato leaves resulted in increased growth of Xcv ΔxopN and Xcv ΔhrpF demonstrating that TFT1 is required to inhibit Xcv multiplication. TFT1 expression was required for Xcv-induced accumulation of PTI5, GRAS4, WRKY28, and LRR22 mRNAs, four PTI marker genes in tomato. Deletion analysis revealed that the XopN C-terminal domain (amino acids 344-733) is sufficient to bind TFT1. Removal of amino acids 605-733 disrupts XopN binding to TFT1 in plant extracts and inhibits XopN-dependent virulence in tomato, demonstrating that these residues are necessary for the XopN/TFT1 interaction. Phos-tag gel analysis and mass spectrometry showed that XopN is phosphorylated in plant extracts at serine 688 in a putative 14-3-3 recognition motif. Mutation of S688 reduced XopN's phosphorylation state but was not sufficient to inhibit binding to TFT1 or reduce XopN virulence. Mutation of S688 and two leucines (L64,L65) in XopN, however, eliminated XopN binding to TFT1 in plant extracts and XopN virulence. L64 and L65 are required for XopN to bind TARK1, a tomato atypical receptor kinase required for PTI. This suggested that TFT1 binding to XopN's C-terminal domain might be stabilized via TARK1/XopN interaction. Pull-down and BiFC analyses show that XopN promotes TARK1/TFT1 complex formation in vitro and in planta by functioning as a molecular scaffold. This is the first report showing that a type III effector targets a host 14-3-3 involved in PTI to promote bacterial pathogenesis. PMID:22719257

  4. Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

    SciTech Connect

    Cho, Byungsu; Choi, Yonghyuk; Shin, Seokyoon; Jeon, Heeyoung; Seo, Hyungtak; Jeon, Hyeongtag

    2014-01-27

    We demonstrate an enhanced electrical stability through a Ti oxide (TiO{sub x}) layer on the amorphous InGaZnO (a-IGZO) back-channel; this layer acts as a surface polarity modifier. Ultrathin Ti deposited on the a-IGZO existed as a TiO{sub x} thin film, resulting in oxygen cross-binding with a-IGZO surface. The electrical properties of a-IGZO thin film transistors (TFTs) with TiO{sub x} depend on the surface polarity change and electronic band structure evolution. This result indicates that TiO{sub x} on the back-channel serves as not only a passivation layer protecting the channel from ambient molecules or process variables but also a control layer of TFT device parameters.

  5. Origin of electrical improvement of amorphous TaInZnO TFT by oxygen thermo-pressure-induced process

    NASA Astrophysics Data System (ADS)

    Du Ahn, Byung; Rim, You Seung; Kim, Hyun Jae; Lim, Jun Hyung; Chung, Kwun-Bum; Park, Jin-Seong

    2014-03-01

    Novel amorphous oxide semiconductor thin film transistors (AOS-TFTs) have already stepped up as an alternative solution for application in mass-produced active matrix organic light-emitting diodes, as well as flexible and transparent electronics. However, the factors related to the device properties (mobility (μsat) and stability (ΔVth)) are still unclear. Since most factors are strongly related to oxygen elements, the versatile thermo-pressure-induced process (TPP) has been applied to improve novel TaInZnO TFT performances with regard to mobility and stability by controlling the oxygen pressure, resulting in the optimum values (improving μsat by 50% and ΔVth by 30%). It is found that the TPP may suppress the occupied trap states as well as increase the unoccupied trapping states in tantalum indium zinc oxide subgap states, depending on the oxygen pressure in TPP. In addition, the origin of the improvement is unveiled with x-ray photoemission and x-ray adsorption spectroscopy (XAS). The TPP in AOS-TFTs can effectively improve and be used to manipulate device properties such as mobility and stability easily. X-ray photoelectron spectroscopy and XAS as a defect state analyser may also provide understanding of the origins of device instability as well as evolutionary electrical improvement in AOS-TFTs.

  6. Study on the photoresponse of amorphous In-Ga-Zn-O and zinc oxynitride semiconductor devices by the extraction of sub-gap-state distribution and device simulation.

    PubMed

    Jang, Jun Tae; Park, Jozeph; Ahn, Byung Du; Kim, Dong Myong; Choi, Sung-Jin; Kim, Hyun-Suk; Kim, Dae Hwan

    2015-07-22

    Persistent photoconduction (PPC) is a phenomenon that limits the application of oxide semiconductor thin-film transistors (TFTs) in optical sensor-embedded displays. In the present work, a study on zinc oxynitride (ZnON) semiconductor TFTs based on the combination of experimental results and device simulation is presented. Devices incorporating ZnON semiconductors exhibit negligible PPC effects compared with amorphous In-Ga-Zn-O (a-IGZO) TFTs, and the difference between the two types of materials are examined by monochromatic photonic C-V spectroscopy (MPCVS). The latter method allows the estimation of the density of subgap states in the semiconductor, which may account for the different behavior of ZnON and IGZO materials with respect to illumination and the associated PPC. In the case of a-IGZO TFTs, the oxygen flow rate during the sputter deposition of a-IGZO is found to influence the amount of PPC. Small oxygen flow rates result in pronounced PPC, and large densities of valence band tail (VBT) states are observed in the corresponding devices. This implies a dependence of PPC on the amount of oxygen vacancies (VO). On the other hand, ZnON has a smaller bandgap than a-IGZO and contains a smaller density of VBT states over the entire range of its bandgap energy. Here, the concept of activation energy window (AEW) is introduced to explain the occurrence of PPC effects by photoinduced electron doping, which is likely to be associated with the formation of peroxides in the semiconductor. The analytical methodology presented in this report accounts well for the reduction of PPC in ZnON TFTs, and provides a quantitative tool for the systematic development of phototransistors for optical sensor-embedded interactive displays. PMID:26094854

  7. High performance flexible electronics for biomedical devices.

    PubMed

    Salvatore, Giovanni A; Munzenrieder, Niko; Zysset, Christoph; Kinkeldei, Thomas; Petti, Luisa; Troster, Gerhard

    2014-01-01

    Plastic electronics is soft, deformable and lightweight and it is suitable for the realization of devices which can form an intimate interface with the body, be implanted or integrated into textile for wearable and biomedical applications. Here, we present flexible electronics based on amorphous oxide semiconductors (a-IGZO) whose performance can achieve MHz frequency even when bent around hair. We developed an assembly technique to integrate complex electronic functionalities into textile while preserving the softness of the garment. All this and further developments can open up new opportunities in health monitoring, biotechnology and telemedicine. PMID:25570912

  8. Highly bendable characteristics of amorphous indium-gallium-zinc-oxide transistors embedded in a neutral plane

    NASA Astrophysics Data System (ADS)

    Park, Chang Bum; Na, HyungIl; Yoo, Soon Sung; Park, Kwon-Shik

    2015-11-01

    The electromechanical response of an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) fabricated on a polyimide substrate was investigated as a function of the neutral axis location and strain history of the bending system. Here, we demonstrate the pronounced bending characteristics of a-IGZO TFTs and their backplane under extreme mechanical strain when they are embedded in a neutral plane (NP). After being subjected to tensile stress, the devices positioned near the NP were observed to function well against a cyclic bending stress of 2 mm radius with 100,000 times, while TFTs farther from the neutral surface exhibited modified electrical properties.

  9. Virtual 3D interactive system with embedded multiwavelength optical sensor array and sequential devices

    NASA Astrophysics Data System (ADS)

    Wang, Guo-Zhen; Huang, Yi-Pai; Hu, Kuo-Jui

    2012-06-01

    We proposed a virtual 3D-touch system by bare finger, which can detect the 3-axis (x, y, z) information of finger. This system has multi-wavelength optical sensor array embedded on the backplane of TFT panel and sequentail devices on the border of TFT panel. We had developed reflecting mode which can be worked by bare finger for the 3D interaction. A 4-inch mobile 3D-LCD with this proposed system was successfully been demonstrated already.

  10. Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors.

    PubMed

    Heo, Jae Sang; Jo, Jeong-Wan; Kang, Jingu; Jeong, Chan-Yong; Jeong, Hu Young; Kim, Sung Kyu; Kim, Kwanpyo; Kwon, Hyuck-In; Kim, Jaekyun; Kim, Yong-Hoon; Kim, Myung-Gil; Park, Sung Kyu

    2016-04-27

    The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal-oxygen-metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal-oxygen-metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 °C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 × 10(9), subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm(2) V(-1) s(-1), and a bias stability of ΔVTH < 2.5 V), which show more than a 30% improvement over the simple DUV-treated a-IGZO TFTs. PMID:27035796

  11. Automatic defect detection for TFT-LCD array process using quasiconformal kernel support vector data description.

    PubMed

    Liu, Yi-Hung; Chen, Yan-Jen

    2011-01-01

    Defect detection has been considered an efficient way to increase the yield rate of panels in thin film transistor liquid crystal display (TFT-LCD) manufacturing. In this study we focus on the array process since it is the first and key process in TFT-LCD manufacturing. Various defects occur in the array process, and some of them could cause great damage to the LCD panels. Thus, how to design a method that can robustly detect defects from the images captured from the surface of LCD panels has become crucial. Previously, support vector data description (SVDD) has been successfully applied to LCD defect detection. However, its generalization performance is limited. In this paper, we propose a novel one-class machine learning method, called quasiconformal kernel SVDD (QK-SVDD) to address this issue. The QK-SVDD can significantly improve generalization performance of the traditional SVDD by introducing the quasiconformal transformation into a predefined kernel. Experimental results, carried out on real LCD images provided by an LCD manufacturer in Taiwan, indicate that the proposed QK-SVDD not only obtains a high defect detection rate of 96%, but also greatly improves generalization performance of SVDD. The improvement has shown to be over 30%. In addition, results also show that the QK-SVDD defect detector is able to accomplish the task of defect detection on an LCD image within 60 ms. PMID:22016625

  12. An integrated micro-manipulation and biosensing platform built in glass-based LTPS TFT technology

    NASA Astrophysics Data System (ADS)

    Chen, Lei-Guang; Wu, Dong-Yi; S-C Lu, Michael

    2012-09-01

    The glass-based low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) process, widely known for making liquid crystal displays, is utilized in this work to realize a fully integrated, microbead-based micro-manipulation and biosensing platform. The operation utilizes arrays of microelectrodes made of transparent iridium tin oxide (ITO) to move the immobilized polystyrene microbeads to the sensor surface by dielectrophoresis (DEP). Detection of remaining microbeads after a specific antigen/antibody reaction is accomplished by photo-detectors under the transparent electrodes. It was found that microbeads can be driven successfully by the 30 × 30 µm2 microelectrodes separated by 10 µm with no more than 6 Vp-p, which is compatible with the operating range of thin-film transistors. Microbeads immobilized with antimouse immunoglobulin (IgG) and prostate-specific antigen (PSA) antibody were successfully detected after specific binding, illustrating the potential of LTPS TFT microarrays for more versatile biosensing applications.

  13. Deposition of Amorphous Silicon and Silicon-Based Dielectrics by Remote Plasma-Enhanced Chemical Vapor Deposition: Application to the Fabrication of Tft's and Mosfet's.

    NASA Astrophysics Data System (ADS)

    Kim, Sang Soo

    1990-01-01

    This thesis discusses the deposition of device quality silicon dioxide (SiO_2), silicon nitride (Si_3N_4 ), and hydrogenated amorphous silicon (a-Si:H) by the remote plasma enhanced chemical vapor deposition (Remote PECVD) technique at low substrate temperature (100 ^circC < T _{rm s} < 450^ circC). An ultra-high-vacuum (UHV) compatible, multi-chamber integrated processing system has been built and used for this study. This system provides: (1) in -situ substrate processing; (2) surface analysis by Auger electron spectroscopy (AES) and reflected high energy electron diffraction (RHEED); and (3) thin film deposition by Remote PECVD. Six issues are addressed: (1) in-situ semiconductor surface cleaning for Si, Ge, GaAs, and CdTe; (2) substrate surface characterization by using RHEED and AES; (3) process gas-substrate interactions (subcutaneous oxidation) occurring during the thin film deposition; (4) the thin film deposition process for silicon-based dielectrics and for doped and intrinsic amorphous silicon; (5) physical properties of the thin films deposited by Remote PECVD using in-situ AES, and ex-situ infrared (ir) spectroscopy and ellipsometry; and (6) electrical performance of thin films in device structures including metal-oxide/or insulator-semiconductor (MOS or MIS) capacitors formed on silicon, and hydrogenated -amorphous silicon thin film transistors (a-Si:H TFT's). Atomically clean semiconductor surfaces are obtained by a remote hydrogen plasma treatment prior to thin film deposition. In the remote PECVD process the process gases are selectively excited, the silane reactant, the source of silicon atoms in the films is never directly plasma excited, and the substrate is also remote from the plasma discharge region. These differences between the remote PECVD process and the conventional direct PECVD process, result in improved control of the insulator stoichiometry, and a reduction in level of chemical impurities such as hydrogen. We find that the

  14. Exposure to volatile organic compounds and kidney dysfunction in thin film transistor liquid crystal display (TFT-LCD) workers.

    PubMed

    Chang, Ta-Yuan; Huang, Kuei-Hung; Liu, Chiu-Shong; Shie, Ruei-Hao; Chao, Keh-Ping; Hsu, Wen-Hsin; Bao, Bo-Ying

    2010-06-15

    Many volatile organic compounds (VOCs) are emitted during the manufacturing of thin film transistor liquid crystal displays (TFT-LCDs), exposure to some of which has been reported to be associated with kidney dysfunction, but whether such an effect exists in TFT-LCD industry workers is unknown. This cross-sectional study aimed to investigate the association between exposure to VOCs and kidney dysfunction among TFT-LCD workers. The results showed that ethanol (1811.0+/-1740.4 ppb), acetone (669.0+/-561.0 ppb), isopropyl alcohol (187.0+/-205.3 ppb) and propylene glycol monomethyl ether acetate (PGMEA) (102.9+/-102.0 ppb) were the four dominant VOCs present in the workplace. The 63 array workers studied had a risk of kidney dysfunction 3.21-fold and 3.84-fold that of 61 cell workers and 18 module workers, respectively. Workers cumulatively exposed to a total level of isopropyl alcohol, PGMEA and propylene glycol monomethyl ether> or =324 ppb-year had a significantly higher risk of kidney dysfunction (adjusted OR=3.41, 95% CI=1.14-10.17) compared with those exposed to <25 ppb-year after adjustment for potential confounding factors. These findings indicated that array workers might be the group at greatest risk of kidney dysfunction within the TFT-LCD industry, and cumulative exposure to specific VOCs might be associated with kidney dysfunction. PMID:20227824

  15. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymeric Gate Dielectric on a Flexible Substrate

    NASA Astrophysics Data System (ADS)

    Hyung, Gun Woo; Park, Jaehoon; Wang, Jian-Xun; Lee, Ho Won; Li, Zhao-Hui; Koo, Ja-Ryong; Kwon, Sang Jik; Cho, Eou-Sik; Kim, Woo Young; Kim, Young Kwan

    2013-07-01

    Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a solution-processed polymeric gate dielectric of cross-linked poly(4-vinylphenol) (c-PVP) film were fabricated on a poly(ethylene terephthalate) (PET) substrate on which an a-IGZO film, as the active channel layer, was deposited by radio frequency (RF) sputtering. The entire TFT fabrication process was carried out at a temperature below 110 °C. The device exhibited an on/off ratio of 1.5×106 and a high field-effect mobility of 10.2 cm2 V-1 s-1, which is, to our knowledge, the best result ever achieved among a-IGZO TFTs with polymeric gate dielectrics on a plastic substrate.

  16. Laminated active matrix organic light-emitting devices

    NASA Astrophysics Data System (ADS)

    Liu, Hongyu; Sun, Runguang

    2008-02-01

    Laminated active matrix organic light-emitting device (AMOLED) realizing top emission by using bottom-emitting organic light-emitting diode (OLED) structure was proposed. The multilayer structure of OLED deposited in the conventional sequence is not on the thin film transistor (TFT) backplane but on the OLED plane. The contact between the indium tin oxide (ITO) electrode of TFT backplane and metal cathode of OLED plane is implemented by using transfer electrode. The stringent pixel design for aperture ratio of the bottom-emitting AMOLED, as well as special technology for the top ITO electrode of top-emitting AMOLED, is unnecessary in the laminated AMOLED.

  17. Discussion on resolution and dynamic range of Se-TFT direct digital radiographic detector

    NASA Astrophysics Data System (ADS)

    Lee, Denny L. Y.; Cheung, Lawrence K.; Palecki, Eugene F.; Jeromin, Lothar S.

    1996-04-01

    The imaging performance of a new direct digital radiographic detector based on amorphous selenium and amorphous silicon TFT array which is under development is discussed. Progress has been made on the development of a multilayer digital x-ray detector panel with a structure consisting of a thin-film transistor pixel array, selenium x-ray photoconductor, dielectric layer and top electrode. An electronic system allows the rapid readout of image data which produces high resolution and wide dynamic range images. Using a straight edge, small wires and low contrast small holes targets, we have studied the spatial resolution, contrast detectability, and dynamic range of this new detector. Digital signals obtained from each pixel of this detector are almost linear with the total x-ray energy absorbed within the pixel area over a wide range of x-ray exposures. The resultant wide dynamic range allows extended latitude of exposure conditions and the enhancement or emphasis of different gray level regions from a single set of image data. For example, from one single exposure of the head, the soft tissue of the nose, detail structure of the teeth, as well as the bone structure of the neck can be examined by displaying and emphasizing selective gray levels of the image data. Image information obtained from this detector appears to be more evenly distributed over a wide dynamic range which is different from digital data obtained from other digital modalities such as the electrometer sensing of discharged potentials on photoconductors or from film digitization. Examples of images are shown. The discrete pixel structure of this detector and the higher intrinsic spatial resolution of selenium combine to produce image sharpness greater than those produced from digital detectors of similar pixel pitch using indirect conversion method or from digitizing film-screen images. The applicability of mathematical tools, such as the MTF which was developed primarily for analog images on a

  18. TFT-Based Active Pixel Sensors for Large Area Thermal Neutron Detection

    NASA Astrophysics Data System (ADS)

    Kunnen, George

    Due to diminishing availability of 3He, which is the critical component of neutron detecting proportional counters, large area flexible arrays are being considered as a potential replacement for neutron detection. A large area flexible array, utilizing semiconductors for both charged particle detection and pixel readout, ensures a large detection surface area in a light weight rugged form. Such a neutron detector could be suitable for deployment at ports of entry. The specific approach used in this research, uses a neutron converter layer which captures incident thermal neutrons, and then emits ionizing charged particles. These ionizing particles cause electron-hole pair generation within a single pixel's integrated sensing diode. The resulting charge is then amplified via a low-noise amplifier. This document begins by discussing the current state of the art in neutron detection and the associated challenges. Then, for the purpose of resolving some of these issues, recent design and modeling efforts towards developing an improved neutron detection system are described. Also presented is a low-noise active pixel sensor (APS) design capable of being implemented in low temperature indium gallium zinc oxide (InGaZnO) or amorphous silicon (a-Si:H) thin film transistor process compatible with plastic substrates. The low gain and limited scalability of this design are improved upon by implementing a new multi-stage self-resetting APS. For each APS design, successful radiation measurements are also presented using PiN diodes for charged particle detection. Next, detection array readout methodologies are modeled and analyzed, and use of a matched filter readout circuit is described as well. Finally, this document discusses detection diode integration with the designed TFT-based APSs.

  19. Study of Fused Thiophene Based Organic Semiconductors and Interfacial Self-Assembled Monolayer (SAM) for Thin-Film Transistor (TFT) Application

    NASA Astrophysics Data System (ADS)

    Youn, Jangdae

    In this thesis, the molecular packing motifs of our newly designed fused thiophenes, benzo[d,d]thieno[3,2-b;4,5-b]dithiophene (BTDT) derivatives, were studied by utilizing grazing incidence wide angle X-ray scattering (GIWAXS). Considering the potential of fused thiophene molecules as an environmentally stable, high performance semiconductor building block, it must be an important groundwork to investigate their thin film structures in relation to molecular structures, single crystal structures, and organic thin-film transistors (OTFT) performances. OTFT device performance is not only determined by semiconductor materials, but also influenced by the interfacial properties. Since there are three major components in TFT structures---electrodes, semiconductors, and dielectrics, two types of major interfaces exist. One is the semiconductor-electrode interface, and the other is the semiconductor-dielectric interface. Both of these interfaces have critical roles for TFT operation. For example, the semiconductor-electrode interface determines the charge injection barrier. Before charge carriers go through the electrode (source)-semiconductor-electrode (drain) pathways, the energy gaps between the work function of the electrodes and the HOMO energy of the semiconductor materials must be overcome for hole injection, or the energy gap between the metal work function of the electrodes and the LUMO energy of the semiconductor materials must be overcome for electron injection. These charge injection barriers are largely determined by the energetic structure of the semiconductor material and work function of the electrode. However, the size of energy gap can be modified by introducing an organic self-assembled monolayer (SAM) on the surface of metal electrode. In addition, the structure of semiconductor films, especially within several monolayers right above the electrode, is greatly influenced by the SAM, and it changes charge injection property of OTFT devices. In this thesis

  20. Identification and Deletion of Tft1, a Predicted Glycosyltransferase Necessary for Cell Wall β-1,3;1,4-Glucan Synthesis in Aspergillus fumigatus

    PubMed Central

    Samar, Danial; Kieler, Joshua B.; Klutts, J. Stacey

    2015-01-01

    Aspergillus fumigatus is an environmental mold that causes severe, often fatal invasive infections in immunocompromised patients. The search for new antifungal drug targets is critical, and the synthesis of the cell wall represents a potential area to find such a target. Embedded within the main β-1,3-glucan core of the A. fumigatus cell wall is a mixed linkage, β-D-(1,3;1,4)-glucan. The role of this molecule or how it is synthesized is unknown, though it comprises 10% of the glucans within the wall. While this is not a well-studied molecule in fungi, it has been studied in plants. Using the sequences of two plant mixed linkage glucan synthases, a single ortholog was identified in A. fumigatus (Tft1). A strain lacking this enzyme (tft1Δ) was generated along with revertant strains containing the native gene under the control of either the native or a strongly expressing promoter. Immunofluorescence staining with an antibody against β-(1,3;1,4)-glucan and biochemical quantification of this polysaccharide in the tft1Δ strain demonstrated complete loss of this molecule. Reintroduction of the gene into the knockout strain yielded reappearance in amounts that correlated with expected expression of the gene. The loss of Tft1 and mixed linkage glucan yielded no in vitro growth phenotype. However, there was a modest increase in virulence for the tft1Δ strain in a wax worm model. While the precise roles for β-(1,3;1,4)-glucan within A. fumigatus cell wall are still uncertain, it is clear that Tft1 plays a pivotal role in the biosynthesis of this cell wall polysaccharide. PMID:25723175

  1. Identification and deletion of Tft1, a predicted glycosyltransferase necessary for cell wall β-1,3;1,4-glucan synthesis in Aspergillus fumigatus.

    PubMed

    Samar, Danial; Kieler, Joshua B; Klutts, J Stacey

    2015-01-01

    Aspergillus fumigatus is an environmental mold that causes severe, often fatal invasive infections in immunocompromised patients. The search for new antifungal drug targets is critical, and the synthesis of the cell wall represents a potential area to find such a target. Embedded within the main β-1,3-glucan core of the A. fumigatus cell wall is a mixed linkage, β-D-(1,3;1,4)-glucan. The role of this molecule or how it is synthesized is unknown, though it comprises 10% of the glucans within the wall. While this is not a well-studied molecule in fungi, it has been studied in plants. Using the sequences of two plant mixed linkage glucan synthases, a single ortholog was identified in A. fumigatus (Tft1). A strain lacking this enzyme (tft1Δ) was generated along with revertant strains containing the native gene under the control of either the native or a strongly expressing promoter. Immunofluorescence staining with an antibody against β-(1,3;1,4)-glucan and biochemical quantification of this polysaccharide in the tft1Δ strain demonstrated complete loss of this molecule. Reintroduction of the gene into the knockout strain yielded reappearance in amounts that correlated with expected expression of the gene. The loss of Tft1 and mixed linkage glucan yielded no in vitro growth phenotype. However, there was a modest increase in virulence for the tft1Δ strain in a wax worm model. While the precise roles for β-(1,3;1,4)-glucan within A. fumigatus cell wall are still uncertain, it is clear that Tft1 plays a pivotal role in the biosynthesis of this cell wall polysaccharide. PMID:25723175

  2. Biological treatment of TMAH (tetra-methyl ammonium hydroxide) in a full-scale TFT-LCD wastewater treatment plant.

    PubMed

    Hu, Tai-Ho; Whang, Liang-Ming; Liu, Pao-Wen Grace; Hung, Yu-Ching; Chen, Hung-Wei; Lin, Li-Bin; Chen, Chia-Fu; Chen, Sheng-Kun; Hsu, Shu Fu; Shen, Wason; Fu, Ryan; Hsu, Romel

    2012-06-01

    This study evaluated biological treatment of TMAH in a full-scale methanogenic up-flow anaerobic sludge blanket (UASB) followed by an aerobic bioreactor. In general, the UASB was able to perform a satisfactory TMAH degradation efficiency, but the effluent COD of the aerobic bioreactor seemed to increase with an increased TMAH in the influent wastewater. The batch test results confirmed that the UASB sludge under methanogenic conditions would be favored over the aerobic ones for TMAH treatment due to its superb ability of handling high strength of TMAH-containing wastewaters. Based on batch experiments, inhibitory chemicals present in TFT-LCD wastewater like surfactants and sulfate should be avoided to secure a stable methanogenic TMAH degradation. Finally, molecular monitoring of Methanomethylovorans hollandica and Methanosarcina mazei in the full-scale plant, the dominant methanogens in the UASB responsible for TMAH degradation, may be beneficial for a stable TMAH treatment performance. PMID:22456234

  3. New Product Development for Green and Low-Carbon Products—A Case Study of Taiwan's TFT-LCD Manufacturer

    NASA Astrophysics Data System (ADS)

    Lin, Chun-Yu; Lee, Amy H. I.

    2011-11-01

    Green supply chain has become an important topic these days due to pollution, global warming, extreme climatic events, etc. A green product is manufactured with the goal of reducing the damage to the environment and limiting the use of energy and other resources at any stage of its life, including raw materials, manufacture, use, and disposal. Carbon footprint is a good measure of the impact that a product has on the environment, especially in climate change, in the entire lifetime of the product. Carbon footprint is directly linked to CO2 emission; thus, the reduction of CO2 emission must be considered in the product life cycle. Although more and more researchers are working on the green supply chain management in the past few years, few have incorporated CO2 emission or carbon footprint into the green supply chain system. Therefore, this research aims to propose an integrated model for facilitating the new product development (NPD) for green and low-carbon products. In this research, a systematic model based on quality function deployment (QFD) is constructed for developing green and low-carbon products in a TFT-LCD manufacturer. Literature review and interviews with experts are done first to collect the factors for developing and manufacturing green and low-carbon products. Fuzzy Delphi method (FDM) is applied next to extract the important factors, and fuzzy interpretive structural modeling (FISM) is used subsequently to understand the relationships among factors. A house of quality (HOQ) for product planning is built last. The results shall provide important information for a TFT-LCD firm in designing a new product.

  4. Zinc oxide nanowire networks for macroelectronic devices

    NASA Astrophysics Data System (ADS)

    Unalan, Husnu Emrah; Zhang, Yan; Hiralal, Pritesh; Dalal, Sharvari; Chu, Daping; Eda, Goki; Teo, K. B. K.; Chhowalla, Manish; Milne, William I.; Amaratunga, Gehan A. J.

    2009-04-01

    Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics.

  5. Electrical stability enhancement of the amorphous In-Ga-Zn-O thin film transistor by formation of Au nanoparticles on the back-channel surface

    NASA Astrophysics Data System (ADS)

    Cho, Byungsu; Lee, Jaesang; Seo, Hyungtak; Jeon, Hyeongtag

    2013-03-01

    We demonstrate a significant improvement in various electrical instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) by implanting Au nanoparticles (NPs) on the a-IGZO back-channel. This TFT showed the enhanced stability of threshold voltage (Vth) under ambient humidity, illumination stress, and a-IGZO thickness variation tests. Application of back-channel Au NPs to a-IGZO TFT is regarded to control the surface potential, to lead reversible carrier trap/injection, and to increase incident UV light absorption by local surface plasmon. Au NPs are formed by e-beam evaporation, and therefore, this technique can be applicable to the TFT manufacturing process.

  6. Practicability of the development of design tools for polymer TFT circuit development

    NASA Astrophysics Data System (ADS)

    Raja, Munira; Sedghi, Naser; Donaghy, D.; Lloyd, Giles; Badriya, Sam; Higgins, Simon J.; Eccleston, Bill

    2004-09-01

    Polymer electronics increasingly needs circuit design tools based on simple but accurate device models. It also needs scaling rules and ultimately its own form of Moore's Law. Such models must include accurate conduction equations. Here we begin the development of device models based on the Universal Mobility Law which is itself the basis of roadmapping. This law is the physical manifestation of variable range hopping and this is widely recognized as a dominant mechanism, except perhaps at the highest doping levels. By interpreting this law in terms of the relationship between mobility and carrier density the gradual channel equation is redeveloped below and above pinch-off. It is immediately apparent that mobility is not an appropriate measure of the speed of circuits. Two new parameters K1 and m are introduced. They can be found from accurate measurements on Schottky barriers and give the maximum possible performance. Real performance is always less than this. The values of K and m for a particular process can be assessed above pinch-off and with stable polymer they can be used to accurately predict the output characteristics.

  7. Imaging performance evaluation of full and binning acquisition modes in a prototype CBCT system equipped with the TFT X-ray detector

    NASA Astrophysics Data System (ADS)

    Seo, Chang-Woo; Cha, Bo Kyung; Yang, Keedong; Jeon, Seongchae; Huh, Young; Park, Justin C.; Song, Bongyong; Song, William Y.; Lee, Byeonghun

    2014-11-01

    The projection number, acquisition time, radiation dose, and full and 2×2 binning modes of the thin film transistor (TFT) X-ray imaging detector were evaluated for image quality in a prototype cone-beam computed tomography (CBCT) built for medical applications. The detector is an amorphous silicon (a-Si) based TFT X-ray detector (PaxScan 4030CB, Varian, Inc.). The a-Si based TFT X-ray detector has a 397×298 mm2 active area with 194 μm pixel pitch and 2048×1536 pixel, of which, 388 μm pixel pitch and 1024×768 pixel were used for the 2×2 binning mode. The Feldkamp, Davis, and Kress (FDK) reconstruction algorithm was used to generate 3D images, and the comparisons were made between different modes of acquisition. The American Association of Physicists in Medicine (AAPM) computed tomography (CT) performance phantom (model 610, CIRS) and the chest phantom (model 76-683, Nuclear Associates) were used to evaluate the image quality.

  8. In Situ Laser Crystallization of Amorphous Silicon for TFT Applications: Controlled Ultrafast Studies in the Dynamic TEM

    SciTech Connect

    Taheri, M; Teslich, N; Lu, J P; Morgan, D; Browning, N

    2008-02-08

    An in situ method for studying the role of laser energy on the microstructural evolution of polycrystalline Si is presented. By monitoring both laser energy and microstructural evolution simultaneously in the dynamic transmission electron microscope, information on grain size and defect concentration can be correlated directly with processing conditions. This proof of principle study provides fundamental scientific information on the crystallization process that has technological importance for the development of thin film transistors. In conclusion, we successfully developed a method for studying UV laser processing of Si films in situ on nanosecond time scales, with ultimate implications for TFT application improvements. In addition to grain size distribution as a function of laser energy density, we found that grain size scaled with laser energy in general. We showed that nanosecond time resolution allowed us to see the nucleation and growth front during processing, which will help further the understanding of microstructural evolution of poly-Si films for electronic applications. Future studies, coupled with high resolution TEM, will be performed to study grain boundary migration, intergranular defects, and grain size distribution with respect to laser energy and adsorption depth.

  9. Improving electrical performance and bias stability of HfInZnO-TFT with optimizing the channel thickness

    SciTech Connect

    Li, Jun; Zhang, Zhi-Lin; Ding, Xing-Wei; Jiang, Xue-Yin; Zhang, Jian-Hua; Zhang, Hao

    2013-10-15

    RF magnetron sputtered HfInZnO film and atomic layer deposition (ALD) Al{sub 2}O{sub 3} film were employed for thin film transistors (TFTs) as channel layer and gate insulator, respectively. To achieve HfInZnO-TFT with high performance and good bias stability, the thickness of HfInZnO active layer was optimized. The performance of HfInZnO-TFTs was found to be thickness dependent. As the HfInZnO active layer got thicker, the leakage current greatly increased from 1.73 × 10{sup −12} to 2.54 × 10{sup −8} A, the threshold voltage decreased from 7.4 to −4.7 V, while the subthreshold swing varied from 0.41 to 1.07 V/decade. Overall, the HfInZnO film showed superior performance, such as saturation mobility of 6.4 cm{sup 2}/V s, threshold voltage of 4.2 V, subthreshold swing of 0.43 V/decade, on/off current ratio of 3 × 10{sup 7} and V{sub th} shift of 3.6 V under V{sub GS}= 10 V for 7200 s. The results demonstrate the possibility of fabricating TFTs using HfInZnO film as active layer and using ALD Al{sub 2}O{sub 3} as gate insulator.

  10. Multiple ink-jet printed zinc tin oxide layers with improved TFT performance

    NASA Astrophysics Data System (ADS)

    Sykora, Benedikt; Wang, Di; von Seggern, Heinz

    2016-07-01

    In the last two decades, metal-oxides, like zinc tin oxide (ZTO), are widely studied semiconductors for transistor applications. This study presents a simple, non-toxic, stable, and cost efficient precursor route for ZTO deposition by ink-jet printing. Such fabricated thin films are composed of an amorphous phase with embedded ZnO nanocrystals. The saturation mobility of ink-jet printed transistors increases from 0.05 cm2 V-1 s-1 for a single semiconducting layer to 7.8 cm2 V-1 s-1 for a transistor composed of 8 layers. This constitutes the highest saturation mobility of an ink-jet printed ZTO transistor reported so far. The devices exhibit large output currents (up to 38.7 mA) and high on/off ratios (exceeding 108). The large improvement in transistor performance with the number of layers is ascribed to an improved degree of substrate coverage confirmed by AFM investigations.

  11. Half-Corbino short-channel amorphous In-Ga-Zn-O thin-film transistors with a-SiOx or a-SiOx/a-SiNx passivation layers

    NASA Astrophysics Data System (ADS)

    Zhao, Chumin; Fung, Tze-Ching; Kanicki, Jerzy

    2016-06-01

    We investigated the electrical properties and stability of short-channel half-Corbino amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). In the linear region, the fabricated half-Corbino a-IGZO TFT with a channel length of 4.5 μm achieves a geometrical factor (fg) of ∼2.7, a threshold voltage (VT) of ∼2.4 V, a field-effect mobility (μeff) of ∼15 cm2/Vs, a subthreshold swing (SS) of ∼320 mV/dec and an off-current (IOFF) < 10-13 A. In the saturation region, asymmetric electrical characteristics such as drain current were observed under different drain bias conditions. The electrical properties asymmetry of half-Corbino a-IGZO TFTs was explained by various geometrical factors owing to the short-channel effect. The reduced VT and increased SS at VDS = 15 V is explained by the drain-induced Schottky barrier lowering. In addition, the bias-temperature stress (BTS) was performed for half-Corbino a-IGZO TFTs with both amorphous silicon oxide (a-SiOx) single layer and a-SiOx/amorphous silicon nitride (a-SiNx) bilayer passivation (PV) structures. The device with bilayer PV shows a threshold voltage shift (ΔVT) of +2.07 and -0.5 V under positive (PBTS = +15 V) and negative BTS (NBTS = -15 V) at 70 °C for 10 ks, respectively. The origins of ΔVT during PBTS and NBTS for half-Corbino a-IGZO TFTs with single and bilayer PV structures were studied. To improve the device electrical stability, the bilayer PV structure should be used.

  12. Noise-driven signal transmission device using molecular dynamics of organic polymers

    NASA Astrophysics Data System (ADS)

    Asakawa, Naoki; Umemura, Koichiro; Fujise, Shinya; Yazawa, Koji; Shimizu, Tadashi; Tansho, Masataka; Kanki, Teruo; Tanaka, Hidekazu

    2014-01-01

    Stochastic threshold devices using a trap-filling transition (TFT) coupled with molecular dynamics in poly(3-alkylthiophene)s were fabricated as potential key devices for noise-driven bioinspired sensors and information processors. This article deals with variable-temperature direct current conductivity and alternating current impedance measurements for vertical-type device elements of Au/regioregular poly(3-decylthiophene) ((RR-P3DT) (thickness: 100 nm)/Au, which show multiple conducting states and quasi-stochastic transitions between these states. Noise measurements indicate the ω-2-type (if VVTFT) power spectral densities, where V and VTFT are an applied voltage and the voltage for TFT, respectively. The noise generation is due to the TFT associated with twist dynamics of π-conjugated polymers near the order-disorder phase transition (ODT). At 298 K, the quasi-stochastic behavior is more noticeable for RR-P3DT than poly(3-hexylthiophene). The quasi-stochastic property is employed to a stochastic one-directional signal transmitting device using optical-electric conversion. The dynamics of ODT for powder samples were also investigated by differential scanning calorimetry measurements and high-resolution solid-state C13 nuclear magnetic resonance spectroscopy, and the correlation of the molecular structure and dynamics with electric properties was discussed.

  13. Roll-to-roll manufacturing of electronic devices

    NASA Astrophysics Data System (ADS)

    Morrison, N. A.; Stolley, T.; Hermanns, U.; Kroemer, U.; Reus, A.; Lopp, A.; Campo, M.; Landgraf, H.

    2012-03-01

    Roll-to-Roll (R2R) production of thin film based electronic devices (e.g. solar cells, activematrix TFT backplanes & touch screens) combine the advantages of the use of inexpensive, lightweight & flexible substrates with high throughput production. Significant cost reduction opportunities can also be found in terms of processing tool capital cost, utilized substrate area and process gas flow when compared with batch processing systems. Nevertheless, material handling, device patterning and yield issues have limited widespread utilization of R2R manufacturing within the electronics industry.

  14. Control Capabilities of Reactive Sputter Deposition Process via ICPs Driven by Low-Inductance Antenna for Large-Area Formation of Thin Film Devices

    NASA Astrophysics Data System (ADS)

    Setsuhara, Yuichi; Takenaka, Kosuke; Ebe, Akinori

    2012-10-01

    Novel plasma-enhanced reactive sputter-deposition system has been developed with a new type of low-inductance antenna (inner-type LIA) consisting of an RF antenna conductor with a length much shorter than the RF wavelength, which is embedded in a hall region dug in the chamber wall and the dielectric window plate for insulation. This new type of the reactive sputter-deposition system has been developed for enhancement of sputter discharge and excellent control of reactivity during film growth. The ICP-enhanced sputter system has been applied to film formations of micro-crystalline silicon (intrinsic layer) and transparent amorphous oxide semiconductor, a-InGaZnO4 (a-IGZO), aiming at low-temperature formation of high-quality functional films for development of next-generation flexible devices. The newly developed process can offer independent control of the flux ratio of the reactive species (ions and radicals) to the deposited species sputtered out of the target. With this new method, micro-crystalline silicon films with crystallinity of 74% and a-IGZO films with mobility as high as 18 cm^2(Vs)-1 have been successfully formed without substrate heating. Furthermore, for development of large-area deposition, uniformity control capabilities with a linear rectangular sputter target with 500 mm length have been examined via variation of power deposition profiles with multiple LIAs.

  15. Device and material characterization and analytic modeling of amorphous silicon thin film transistors

    NASA Astrophysics Data System (ADS)

    Slade, Holly Claudia

    Hydrogenated amorphous silicon thin film transistors (TFTs) are now well-established as switching elements for a variety of applications in the lucrative electronics market, such as active matrix liquid crystal displays, two-dimensional imagers, and position-sensitive radiation detectors. These applications necessitate the development of accurate characterization and simulation tools. The main goal of this work is the development of a semi- empirical, analytical model for the DC and AC operation of an amorphous silicon TFT for use in a manufacturing facility to improve yield and maintain process control. The model is physically-based, in order that the parameters scale with gate length and can be easily related back to the material and device properties. To accomplish this, extensive experimental data and 2D simulations are used to observe and quantify non- crystalline effects in the TFTs. In particular, due to the disorder in the amorphous network, localized energy states exist throughout the band gap and affect all regimes of TFT operation. These localized states trap most of the free charge, causing a gate-bias-dependent field effect mobility above threshold, a power-law dependence of the current on gate bias below threshold, very low leakage currents, and severe frequency dispersion of the TFT gate capacitance. Additional investigations of TFT instabilities reveal the importance of changes in the density of states and/or back channel conduction due to bias and thermal stress. In the above threshold regime, the model is similar to the crystalline MOSFET model, considering the drift component of free charge. This approach uses the field effect mobility to take into account the trap states and must utilize the correct definition of threshold voltage. In the below threshold regime, the density of deep states is taken into account. The leakage current is modeled empirically, and the parameters are temperature dependent to 150oC. The capacitance of the TFT can be

  16. Evaluation of methanogenic treatment of TMAH (tetra-methyl ammonium hydroxide) in a full-scale TFT-LCD wastewater treatment process.

    PubMed

    Hu, T H; Whang, L M; Lei, C N; Chen, C F; Chiang, T Y; Lin, L B; Chen, H W; Liu, P W G; Cheng, S S

    2010-01-01

    This study evaluated TMAH biodegradation under methanogenic conditions. Under methanogenic conditions, a sludge from a full-scale UASB treating TFT-LCD wastewater was able to degrade 2,000 mg/L of TMAH within 10 h and attained a specific degradation rate of 19.2 mgTMAH/gVSS-h. Furthermore, several chemicals including some surfactants, DMSO, and sulfate were examined for their potential inhibitory effects on TMAH biodegradation under methanogenic conditions. The results indicated that surfactant S1 (up to 2%) and DMSO (up to 1,000 mg/L) presented negligible inhibitory effects on TMAH degradation, while surfactant S2 (0.2-1%) might inhibit methanogenic reaction without any TMAH degradation for 3-5 h. At sulfate concentrations higher than 300 mg/L, a complete inhibition of methanogenic reaction and TMAH biodegradation was observed. Results from cloning and sequencing of archaeal 16S rRNA gene fragments showed that Methanosarcina barkeri and Methanosarcina mazei were the dominant methanogens in the UASB treating TMAH-containing TFT-LCD wastewater. PMID:20651446

  17. Biological treatment of thin-film transistor liquid crystal display (TFT-LCD) wastewater using aerobic and anoxic/oxic sequencing batch reactors.

    PubMed

    Lei, Chin-Nan; Whang, Liang-Ming; Chen, Po-Chun

    2010-09-01

    The amount of pollutants produced during manufacturing processes of thin-film transistor liquid crystal display (TFT-LCD) substantially increases due to an increasing production of the opto-electronic industry in Taiwan. This study presents the treatment performance of one aerobic and one anoxic/oxic (A/O) sequencing batch reactors (SBRs) treating synthetic TFT-LCD wastewater containing dimethyl sulfoxide (DMSO), monoethanolamine (MEA), and tetra-methyl ammonium hydroxide (TMAH). The long-term monitoring results for the aerobic and A/O SBRs demonstrate that stable biodegradation of DMSO, MEA, and TMAH can be achieved without any considerably adverse impacts. The ammonium released during MEA and TMAH degradation can also be completely oxidized to nitrate through nitrification in both SBRs. Batch studies on biodegradation rates for DMSO, MEA, and TMAH under anaerobic, anoxic, and aerobic conditions indicate that effective MEA degradation can be easily achieved under all three conditions examined, while efficient DMSO and TMAH degradation can be attained only under anaerobic and aerobic conditions, respectively. The potential odor problem caused by the formation of malodorous dimethyl sulfide from DMSO degradation under anaerobic conditions, however, requires insightful consideration in treating DMSO-containing wastewater. PMID:20705321

  18. Short channel amorphous In-Ga-Zn-O thin-film transistor arrays for ultra-high definition active matrix liquid crystal displays: Electrical properties and stability

    NASA Astrophysics Data System (ADS)

    Kim, Soo Chang; Kim, Young Sun; Yu, Eric Kai-Hsiang; Kanicki, Jerzy

    2015-09-01

    The electrical properties and stability of ultra-high definition (UHD) amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) arrays with short channel (width/length = 12/3 μm) were examined. A-IGZO TFT arrays have a mobility of ∼6 cm2/V s, subthreshold swing (S.S.) of 0.34 V/decade, threshold voltage of 3.32 V, and drain current (Id) on/off ratio of <109 with Ioff below 10-13 A. Overall these devices showed slightly different electrical characteristics as compared to the long channel devices; non-saturation of output curve at high drain-to-source voltage (Vds), negative shift of threshold voltage with increasing Vds, and the mobility reduction at high gate voltage (Vgs) were observed. The second derivative method adopting Tikhonov's regularization theory is suggested for the robust threshold voltage extraction. The temperature dependency of γ-value was established after taking into consideration the impact of source/drain contact resistances. The AC bias-temperature stress was used to simulate the actual operation of active matrix liquid crystal displays (AM-LCDs). The threshold voltage shift had a dependency on the magnitude of drain bias stress, frequency, and duty cycle due to the impact ionization accelerated at high temperature. This study demonstrates that the short channel effects, source/drain contact resistances and impact ionization have to be taken into account during optimization of UHD AM-LCDs.

  19. Chalcogenide based materials and devices for flexible electronics applications

    NASA Astrophysics Data System (ADS)

    Salas-Villasenor, Ana Lizeth

    The scaling of large-area electronics for applications in flat-panel displays, digital X-ray images, and flexible electronics is pushing the technological and cost limits of conventional materials and device processing. Chemical bath deposited chalcogenide films are attractive for thin film transistors (TFTs) for large area electronics given its simple fabrication, low temperature and compatibility with most substrates. In this dissertation, we describe the development of a high performance chalcogenide based TFTs using chemical bath deposition (CBD) methods. Cadmium sulfide (CdS) and lead sulfide (PbS) are used as the TFT channel layer. The influence of several CBD parameters is studied. CBD pH and CdS film thickness have a profound influence on the TFT electrical characteristics. These parameters impact film cluster size and impurity concentration. With the optimized CdS deposition conditions TFTs with excellent electrical properties are demonstrated. With a novel photolithography approach demonstrated here, TFTs with mobilities as high as 18 cm2 /V s, Ion/Ioff of 109 and V T shift of less than 0.1 eV were fabricated. To achieve these TFTs characteristics, a variety of contact materials, gate dielectrics, annealing conditions and device structures were studied. The factors affecting VT instability for CdS based TFTs are also presented and correlated to electrode materials, gate dielectrics, and post-annealing. In summary, TFT instability is correlated to traps and impurities at the dielectric/semiconductor and/or in the semiconductor film. In addition, this dissertation demonstrates CdS TFTs integration in hybrid complementary metal-oxide-semiconductor (CMOS) circuits. In particular, logic gates and ferroelectric random access (FRAM) memory cells are demonstrated. Finally, CdS based TFTs on flexible and transparent substrates with excellent stability and mobility of 10-18 cm2/V-s, threshold voltage of 1.6-4.8 V, and Ion/Ioff ratios of 107 are demonstrated. This

  20. Electronically Pure Single-Chirality Semiconducting Single-Walled Carbon Nanotube for Large-Scale Electronic Devices.

    PubMed

    Li, Huaping; Liu, Hongyu; Tang, Yifan; Guo, Wenmin; Zhou, Lili; Smolinski, Nina

    2016-08-17

    Single-walled carbon nanotube (SWCNT) networks deposited from a purple single chirality (6,5) SWCNT aqueous solution were electrically characterized as pure semiconductors based on metal/semiconductor/metal Schottky contacts using both complex instruments and a portable device. Both air-stable PMOS (p-type metal-oxide-semiconductor) and NMOS (n-type metal-oxide-semiconductor, resembling amorphous silicon) thin film transistors were fabricated on (6,5) SWCNT in large scale showing the characteristics of fA off current and ION/IOFF ratio of >1 × 10(8). CMOS (complementary metal-oxide-semiconductor) SWCNT inverter was demonstrated by wire-bonding PMOS (6,5) SWCNT TFT and NMOS (6,5) SWCNT TFT together to achieve the voltage gain as large as 52. PMID:27487382

  1. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications

    NASA Astrophysics Data System (ADS)

    Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2016-05-01

    Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm2 V‑1 sec‑1, and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

  2. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

    PubMed

    Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2016-01-01

    Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(-1) sec(-1), and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity. PMID:27157914

  3. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications

    PubMed Central

    Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2016-01-01

    Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm2 V−1 sec−1, and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity. PMID:27157914

  4. Thermally Stable and Sterilizable Polymer Transistors for Reusable Medical Devices.

    PubMed

    Kyaw, Aung Ko Ko; Jamalullah, Feroz; Vaithieswari, Loga; Tan, Mein Jin; Zhang, Lian; Zhang, Jie

    2016-04-20

    We realize a thermally stable polymer thin film transistor (TFT) that is able to endure the standard autoclave sterilization for reusable medical devices. A thermally stable semiconducting polymer poly[4-(4,4-dihexadecyl-4Hcyclopenta[1,2-b:5,4-b]dithiophen-2-yl)-alt[1,2,5]thiadiazolo [3,4c] pyridine], which is stable up to 350 °C in N2 and 200 °C in air, is used as channel layer, whereas the biocompatible SU-8 polymer is used as a flexible dielectric layer, in addition to conventional SiO2 dielectric layer. Encapsulating with in-house designed composite film laminates as moisture barrier, both TFTs using either SiO2 or SU-8 dielectric layer exhibit good stability in sterilized conditions without significant change in mobility and threshold voltage. After sterilization for 30 min in autoclave, the mobility drops only 15%; from as-fabricated mobility of 1.4 and 1.3 cm(2) V(-1) s(-1) to 1.2 and 1.1 cm(2) V(-1) s(-1) for TFTs with SiO2 and SU-8 dielectric layer, respectively. Our TFT design along with experimental results reveal the opportunity on organic/polymer flexible TFTs in sterilizable/reusable medical device application. PMID:27039992

  5. Light-bias coupling erase process for non-volatile zinc tin oxide TFT memory with a nickel nanocrystals charge trap layer

    NASA Astrophysics Data System (ADS)

    Li, Jeng-Ting; Liu, Li-Chih; Ke, Po-Hsien; Chen, Jen-Sue; Jeng, Jiann-Shing

    2016-03-01

    A nonvolatile charge trapping memory is demonstrated on a thin film transistor (TFT) using a solution processed ultra-thin (~7 nm) zinc tin oxide (ZTO) semiconductor layer with an Al2O3/Ni-nanocrystals (NCs)/SiO2 dielectric stack. A positive threshold voltage (V TH) shift of 7 V is achieved at gate programming voltage of 40 V for 1 s but the state will not be erased by applying negative gate voltage. However, the programmed V TH shift can be expediently erased by applying a gate voltage of  -10 V in conjunction with visible light illumination for 1 s. It is found that the sub-threshold swing (SS) deteriorates slightly under light illumination, indicating that photo-ionized oxygen vacancies (V\\text{o}+ and/or V\\text{o}++ ) are trapped at the interface between Al2O3 and ZTO, which assists the capture of electrons discharged from the Ni NCs charge trapping layer. The light-bias coupling action and the role of ultra-thin ZTO thickness are discussed to elucidate the efficient erasing mechanism.

  6. Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

    SciTech Connect

    Lai, Hsin-Cheng; Pei, Zingway; Jian, Jyun-Ruri; Tzeng, Bo-Jie

    2014-07-21

    In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology is suitable for use in flexible displays.

  7. Noise-driven signal transmission device using molecular dynamics of organic polymers

    NASA Astrophysics Data System (ADS)

    Asakawa, Naoki; Kanki, Teruo; Tanaka, Hidekazu

    2014-03-01

    Stochastic threshold devices using trap-filling transition coupled with molecular dynamics in poly(3-alkyl thiophene)s [P3ATs] were fabricated as potential key devices for noise-driven bio-inspired sensors and infor- mation processors. This article deals with variable-temperature direct current conductivity and alternating current impedance measurements for vertical-type device elements of Au/regioregular poly(3-decylthiophene) [RR-P3DT] (thickness:100nm)/Au, which show multiple conducting states and quasi-stochastic transitions between these states. Noise measurements indicate the ω-2-type (if V < VTFT = 10V) and ω-1-type (if V > VTFT) power spectral densities, where V and VTFT are an applied voltage and the voltage for trap-filling transition(TFT),respectively. The noise generation is due to TFT that associated with twist dynamics of π-conjugated polymers near the order-disorder phase transition. At 298K, the quasi-stochastic behavior is more noticeable for RR-P3DT than poly(3-hexylthiophene) [RR-P3HT]. The dynamics of the order-disorder phase transition (ODT) for powder samples were also investigated by differential scanning calorimetry (DSC) measurements and high-resolution solid-state C NMR spectroscopy, and the correlation of molecular structure and dynamics with electric properties was discussed.

  8. Reliable 6 PEP LTPS device for AMOLED's

    NASA Astrophysics Data System (ADS)

    Chou, Cheng-Wei; Wang, Pei-Yun; Hu, Chin-Wei; Chang, York; Chuang, Ching-Sang; Lin, Yusin

    2013-09-01

    This study presents a TFT structure which has less photo process and higher cost competitiveness in AMOLED display markets. A novel LTPS based 6 masks TFT structure for bottom emission AMOLED display is demonstrated in this paper. High field effect mobility (PMOS < 80 cm2/Vs ) and high reliability (PBTS △Vth< 0.02V @ 50oC VG=15V 10ks) was accomplished without the high temperature and rapid thermal annealing (RTA) activation process. Furthermore, a 14-inch AMOLED TV was achieved on the proposed 6-pep TFT backplane using the Gen. 3.5 mass production factory.

  9. DC sputtered amorphous In-Sn-Zn-O thin-film transistors: Electrical properties and stability

    NASA Astrophysics Data System (ADS)

    Nakata, Mitsuru; Zhao, Chumin; Kanicki, Jerzy

    2016-02-01

    In this study, we investigated the electrical properties of DC sputtered amorphous In-Sn-Zn-O (a-ITZO) thin-film transistors (TFTs) fabricated under various process conditions. Fabricated a-ITZO TFTs achieved a threshold voltage (VT) of 1.0 V, subthreshold swing (SS) of 0.38 V/dec and field-effect mobility (μeff) of around 30 cm2/V s. An analytical field-effect mobility model is proposed for a-ITZO TFTs with key parameters extracted using different methods. The impacts of a-ITZO channel thickness and oxygen gas flow ratio on device performance were evaluated. Finally, the a-ITZO TFT bias-temperature stress (BTS) induced electrical instability was studied. In comparison to amorphous In-Ga-Zn-O (a-IGZO) TFTs, improved electrical stability was observed for a-ITZO TFTs using exactly the same BTS conditions.

  10. Ultraviolet-enhanced device properties in pentacene-based thin-film transistors

    SciTech Connect

    Choi, Jeong-M.; Hwang, D. K.; Hwang, Jung Min; Kim, Jae Hoon; Im, Seongil

    2007-03-12

    The authors report on the ultraviolet (UV)-enhanced device properties in pentacene-based thin-film transistors (TFTs). Pentacene TFTs showed a degraded mobility and lowered saturation current after illumination by a high energy UV with 254 nm wavelength. However, under 364 nm UV these devices surprisingly displayed enhanced saturation current and also showed threshold voltage shift toward lower values, maintaining their mobilities. The saturation current increase and threshold voltage shift were further related to the negative fixed charges excessively formed at the pentacene/dielectric interface by the low energy UV. The authors thus conclude that a low energy UV could rather enhance the pentacene TFT performances and also control the threshold voltage of the device.

  11. Surface potential measurement on contact resistance of amorphous-InGaZnO thin film transistors by Kelvin probe force microscopy

    NASA Astrophysics Data System (ADS)

    Han, Zhiheng; Xu, Guangwei; Wang, Wei; Lu, Congyan; Lu, Nianduan; Ji, Zhuoyu; Li, Ling; Liu, Ming

    2016-07-01

    Contact resistance plays an important role in amorphous InGaZnO (a-IGZO) thin film transistors (TFTs). In this paper, the surface potential distributions along the channel have been measured by using Kelvin probe force microscopy (KPFM) on operating a-IGZO TFTs, and sharp potential drops at the edges of source and drain were observed. The source and drain contact resistances can be extracted by dividing sharp potential drops with the corresponding drain to source current. It is found that the contact resistances could not be neglected compared with the whole channel resistances in the a-IGZO TFT, and the contact resistances decrease remarkably with increasing gate biased voltage. Our results suggest that the contact resistances can be controlled by tuning the gate biased voltage. Moreover, a transition from gradual channel approximation to space charge region was observed through the surface potential map directly when TFT operating from linear regime to saturation regime.

  12. Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

    SciTech Connect

    Jeong, Ho-young; Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong; Mativenga, Mallory; Jang, Jin

    2014-01-13

    We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n{sup +} a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10{sup −3} Ω cm after treatment, and then it increases to 7.92 × 10{sup −2} Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n{sup +}a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n{sup +} a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm{sup 2}/V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H{sub 2} plasma treatment degrades significantly after 300 °C annealing.

  13. Testing of flexible InGaZnO-based thin-film transistors under mechanical strain

    NASA Astrophysics Data System (ADS)

    Münzenrieder, N. S.; Cherenack, K. H.; Tröster, G.

    2011-08-01

    Thin-film transistors (TFTs) fabricated on flexible plastic substrates are an integral part of future flexible large-area electronic devices like displays and smart textiles. Devices for such applications require stable electrical performance under electrical stress and also during applied mechanical stress induced by bending of the flexible substrate. Mechanical stress can be tensile or compressive strain depending on whether the TFT is located outside or inside of the bending plane. Especially the impact of compressive bending on TFT performance is hard to measure, because the device is covered with the substrate in this case. We present a method which allows us to continuously measure the electrical performance parameters of amorphous Indium-Gallium-Zinc Oxide (a-IGZO) based TFTs exposed to arbitrary compressive and tensile bending radii. To measure the influence of strain on a TFT it is attached and electrically connected to a flexible carrier foil, which afterwards is fastened to two plates in our bending tester. The bending radius can be adjusted by changing the distance between these plates. Thus it is possible to apply bending radii in the range between a totally flat substrate and ≈1 mm, corresponding to a strain of ≈3.5%. The tested bottom-gate TFTs are especially designed for use with our bending tester and fabricated on 50 μm thick flexible Kapton® E polyimide substrates. To show the different application areas of our bending method we characterized our TFTs while they are bent to different tensile and compressive bending radii. These measurements show that the field effect mobilities and threshold voltages of the tested a-IGZO TFTs are nearly, but not absolutely, stable under applied strain, compared to the initial values the mobilities shift by ≈3.5% in the tensile case and ≈-1.5% in the compressive one, at a bending radius of 8 mm. We also measured the influence of repeated bending (2500 cycles over ≈70 h), where a shift of the

  14. Photovoltaic device

    DOEpatents

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-06-02

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

  15. Photovoltaic device

    SciTech Connect

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-09-01

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device (10) with a multilayered photovoltaic cell assembly (100) and a body portion (200) joined at an interface region (410) and including an intermediate layer (500), at least one interconnecting structural member (1500), relieving feature (2500), unique component geometry, or any combination thereof.

  16. Microfluidic Device

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Zheng, Siyang (Inventor); Lin, Jeffrey Chun-Hui (Inventor); Kasdan, Harvey (Inventor)

    2015-01-01

    Described herein are particular embodiments relating to a microfluidic device that may be utilized for cell sensing, counting, and/or sorting. Particular aspects relate to a microfabricated device that is capable of differentiating single cell types from dense cell populations. One particular embodiment relates a device and methods of using the same for sensing, counting, and/or sorting leukocytes from whole, undiluted blood samples.

  17. Microfluidic Device

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Zheng, Siyang (Inventor); Lin, Jeffrey Chun-Hui (Inventor); Kasdan, Harvey L. (Inventor)

    2016-01-01

    Described herein are particular embodiments relating to a microfluidic device that may be utilized for cell sensing, counting, and/or sorting. Particular aspects relate to a microfabricated device that is capable of differentiating single cell types from dense cell populations. One particular embodiment relates a device and methods of using the same for sensing, counting, and/or sorting leukocytes from whole, undiluted blood samples.

  18. Sealing device

    SciTech Connect

    Garcia-Crespo, Andres Jose

    2013-12-10

    A sealing device for sealing a gap between a dovetail of a bucket assembly and a rotor wheel is disclosed. The sealing device includes a cover plate configured to cover the gap and a retention member protruding from the cover plate and configured to engage the dovetail. The sealing device provides a seal against the gap when the bucket assemply is subjected to a centrifugal force.

  19. Electrochromic devices

    DOEpatents

    Allemand, Pierre M.; Grimes, Randall F.; Ingle, Andrew R.; Cronin, John P.; Kennedy, Steve R.; Agrawal, Anoop; Boulton, Jonathan M.

    2001-01-01

    An electrochromic device is disclosed having a selective ion transport layer which separates an electrochemically active material from an electrolyte containing a redox active material. The devices are particularly useful as large area architectural and automotive glazings due to there reduced back reaction.

  20. BRAKE DEVICE

    DOEpatents

    O'Donnell, T.J.

    1959-03-10

    A brake device is described for utilization in connection with a control rod. The device comprises a pair of parallelogram link mechanisms, a control rod moveable rectilinearly therebetween in opposite directions, and shoes resiliently supported by the mechanism for frictional engagement with the control rod.

  1. PLASMA DEVICE

    DOEpatents

    Gow, J.D.; Wilcox, J.M.

    1961-12-26

    A device is designed for producing and confining highenergy plasma from which neutrons are generated in copious quantities. A rotating sheath of electrons is established in a radial electric field and axial magnetic field produced within the device. The electron sheath serves as a strong ionizing medium to gas introdueed thereto and also functions as an extremely effective heating mechanism to the resulting plasma. In addition, improved confinement of the plasma is obtained by ring magnetic mirror fields produced at the ends of the device. Such ring mirror fields are defined by the magnetic field lines at the ends of the device diverging radially outward from the axis of the device and thereafter converging at spatial annular surfaces disposed concentrically thereabout. (AFC)

  2. Investigation of the ferroelectric switching behavior of P(VDF-TrFE)-PMMA blended films for synaptic device applications

    NASA Astrophysics Data System (ADS)

    Kim, E. J.; Kim, K. A.; Yoon, S. M.

    2016-02-01

    Synaptic plasticity can be mimicked by electronic synaptic devices. By using ferroelectric thin films as gate insulator for thin-film transistors (TFT), channel conductance can be defined as the synaptic plasticity, and gradually modulated by the variations in amounts of aligned ferroelectric dipoles. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]-poly(methyl methacrylate) (PMMA) blended films are chosen and their switching kinetics are investigated by using the Kolmogorov-Avrami-Ishibashi model. The switching time for ferroelectric polarization is sensitively influenced by the amplitude of applied electric field and volumetric ratio of ferroelectric beta-phases in the P(VDF-TrFE)-PMMA films. The switching time of the P(VDF-TrFE) increases with decreasing the pulse amplitude and/or the ratio of ferroelectric beta-phases by incorporation of PMMA. The activation electric field is also found to increase as the increase in blended amount of PMMA. Synapse TFTs are fabricated using the P(VDF-TrFE)-PMMA as gate insulator and In-Ga-Zn-O active channels. The drain currents of the synapse TFTs gradually increased when the voltage pulse signals with given duration are repeatedly applied. This suggests that the synaptic weights can be modulated by the number of external pulse signals, and that the proposed synapse TFT can be applied for mimicking the operations of bio-synapses.

  3. Toward the Limits of Uniformity of Mixed Metallicity SWCNT TFT Arrays with Spark-Synthesized and Surface-Density-Controlled Nanotube Networks.

    PubMed

    Kaskela, Antti; Mustonen, Kimmo; Laiho, Patrik; Ohno, Yutaka; Kauppinen, Esko I

    2015-12-30

    We report the fabrication of thin film transistors (TFTs) from networks of nonbundled single-walled carbon nanotubes with controlled surface densities. Individual nanotubes were synthesized by using a spark generator-based floating catalyst CVD process. High uniformity and the control of SWCNT surface density were realized by mixing of the SWCNT aerosol in a turbulent flow mixer and monitoring the online number concentration with a condensation particle counter at the reactor outlet in real time. The networks consist of predominantly nonbundled SWCNTs with diameters of 1.0-1.3 nm, mean length of 3.97 μm, and metallic to semiconducting tube ratio of 1:2. The ON/OFF ratio and charge carrier mobility of SWCNT TFTs were simultaneously optimized through fabrication of devices with SWCNT surface densities ranging from 0.36 to 1.8 μm(-2) and channel lengths and widths from 5 to 100 μm and from 100 to 500 μm, respectively. The density optimized TFTs exhibited excellent performance figures with charge carrier mobilities up to 100 cm(2) V(-1) s(-1) and ON/OFF current ratios exceeding 1 × 10(6), combined with high uniformity and more than 99% of devices working as theoretically expected. PMID:26666626

  4. Gripping device

    NASA Technical Reports Server (NTRS)

    Parma, George F. (Inventor)

    1989-01-01

    This invention relates to a gripping device, and more particularly to one with a large moment carrying capability for handling long workpieces of various diameters and which can be particularly used as an end effector on a robotic arm.

  5. Assistive Devices

    MedlinePlus

    ... center provides information on VA benefits for assistive technology. Medicare − Benefits may include assistive devices, such as ... a Web site that provides information about assistive technology products. Go to the “Products” section to find ...

  6. Device Performance

    SciTech Connect

    Not Available

    2006-06-01

    In the Device Performance group, within the National Center for Photovoltaic's Measurements and Characterization Division, we measure the performance of PV cells and modules with respect to standard reporting conditions--defined as a reference temperature (25 C), total irradiance (1000 Wm-2), and spectral irradiance distribution (IEC standard 60904-3). Typically, these are ''global'' reference conditions, but we can measure with respect to any reference set. To determine device performance, we conduct two general categories of measurements: spectral responsivity (SR) and current versus voltage (I-V). We usually perform these measurements using standard procedures, but we develop new procedures when required by new technologies. We also serve as an independent facility for verifying device performance for the entire PV community. We help the PV community solve its special measurement problems, giving advice on solar simulation, instrumentation for I-V measurements, reference cells, measurement procedures, and anomalous results. And we collaborate with researchers to analyze devices and materials.

  7. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry.

    PubMed

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-01-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows. PMID:27174791

  8. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    PubMed Central

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-01-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows. PMID:27174791

  9. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-05-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows.

  10. PLASMA DEVICE

    DOEpatents

    Baker, W.R.; Brathenahl, A.; Furth, H.P.

    1962-04-10

    A device for producing a confined high temperature plasma is described. In the device the concave inner surface of an outer annular electrode is disposed concentrically about and facing the convex outer face of an inner annular electrode across which electrodes a high potential is applied to produce an electric field there between. Means is provided to create a magnetic field perpendicular to the electric field and a gas is supplied at reduced pressure in the area therebetween. Upon application of the high potential, the gas between the electrodes is ionized, heated, and under the influence of the electric and magnetic fields there is produced a rotating annular plasma disk. The ionized plasma has high dielectric constant properties. The device is useful as a fast discharge rate capacitor, in controlled thermonuclear research, and other high temperature gas applications. (AEC)

  11. Analytical Device

    NASA Technical Reports Server (NTRS)

    1983-01-01

    In the mid 60s under contract with NASA, Dr. Benjamin W. Grunbaum was responsible for the development of an automated electrophoresis device that would work in the weightless environment of space. The device was never used in space but was revived during the mid 70s as a technology utilization project aimed at an automated system for use on Earth. The advanced system became known as the Grunbaum System for electrophoresis. It is a versatile, economical assembly for rapid separation of specific blood proteins in very small quantities, permitting their subsequent identification and quantification.

  12. Medical Device Safety

    MedlinePlus

    ... Vaccines, Blood & Biologics Animal & Veterinary Cosmetics Tobacco Products Medical Devices Home Medical Devices Medical Device Safety Medical Device Safety Share Tweet Linkedin Pin it More sharing ...

  13. Cleaning devices

    NASA Technical Reports Server (NTRS)

    Schneider, Horst W. (Inventor)

    1981-01-01

    Cleaning devices are described which include a vacuum cleaner nozzle with a sharp rim for directing incoming air down against the floor; a vacuum cleaner wherein electrostatically charged brushes that brush dirt off a floor, are electrically grounded to remove charges that could tend to hold dirt to the brushes; a vacuum cleaner head having slots that form a pair of counter-rotating vortices, and that includes an outlet that blows a stream of air at the floor region which lies between the vortices; a cleaning device that sweeps a group of brushes against the ground along a first direction, and then sweeps them along the same ground area but in a second direction angled from the first by an amount such as 90.degree., to sweep up particles lying in crevices extending along any direction; a device that gently cleans a surface to remove bacteria for analysis, including an inclined wall along which cleaning fluid flows onto the surface, a vacuum chamber for drawing in the cleaning fluid, and a dividing wall spaced slightly from the surface to separate the fluid source from the vacuum cleaner chamber; and a device for providing pulses of pressured air including a chamber to which pressured air is supplied, a ball that circulates around the chamber to repeatedly close an outlet, and an air source that directs air circumferentially to move the ball around the chamber.

  14. Electrochemical device

    DOEpatents

    Grimes, Patrick G.; Einstein, Harry; Bellows, Richard J.

    1988-01-12

    A tunnel protected electrochemical device features channels fluidically communicating between manifold, tunnels and cells. The channels are designed to provide the most efficient use of auxiliary power. The channels have a greater hydraulic pressure drop and electrical resistance than the manifold. This will provide a design with the optimum auxiliary energy requirements.

  15. Detection device

    DOEpatents

    Smith, Jay E.

    1984-01-01

    The present invention is directed to a detection device comprising: (1) an entrance chamber, (2) a central chamber, and (3) an exit chamber. The central chamber includes an ionizing gas, anode, and means for connecting the anode with an external power supply and pulse counter.

  16. Detection device

    DOEpatents

    Smith, J.E.

    1981-02-27

    The present invention is directed to a detection device comprising: (1) an entrance chamber; (2) a central chamber; and (3) an exit chamber. The central chamber includes an ionizing gas, anode, and means for connecting the anode with an external power supply and pulse counter.

  17. Intrauterine devices.

    PubMed

    Burkman, R T

    1991-08-01

    Approximately 60 million women use the intrauterine device (IUD) worldwide; however, owing primarily to nonmedical reasons, the IUD is far less popular in the United States. Although the contraceptive mechanism of action is unknown, it appears that spermicidal activity may be important. Overall, the efficacy of the copper devices is quite good, such that the overall lifespan can probably be extended. Possible pelvic infection remains the greatest potential risk, although in properly selected women the risk is quite low. Use of prophylactic antibiotics at the time of insertion may offer additional protection against this risk. Although IUD users may have more nonspecific vaginal inflammation than do other women, the clinical significance is probably limited. Further, users do not appear to have elevated risks for cervical infections. Although menometrorrhagia persists as a potential problem, the mechanism for such bleeding is not well understood. Finally, the retroflexed uterine position does not appear to increase the risk of abnormal outcomes. PMID:1878504

  18. LOADING DEVICE

    DOEpatents

    Ohlinger, L.A.

    1958-10-01

    A device is presented for loading or charging bodies of fissionable material into a reactor. This device consists of a car, mounted on tracks, into which the fissionable materials may be placed at a remote area, transported to the reactor, and inserted without danger to the operating personnel. The car has mounted on it a heavily shielded magazine for holding a number of the radioactive bodies. The magazine is of a U-shaped configuration and is inclined to the horizontal plane, with a cap covering the elevated open end, and a remotely operated plunger at the lower, closed end. After the fissionable bodies are loaded in the magazine and transported to the reactor, the plunger inserts the body at the lower end of the magazine into the reactor, then is withdrawn, thereby allowing gravity to roll the remaining bodies into position for successive loading in a similar manner.

  19. Laser device

    DOEpatents

    Scott, Jill R.; Tremblay, Paul L.

    2008-08-19

    A laser device includes a virtual source configured to aim laser energy that originates from a true source. The virtual source has a vertical rotational axis during vertical motion of the virtual source and the vertical axis passes through an exit point from which the laser energy emanates independent of virtual source position. The emanating laser energy is collinear with an orientation line. The laser device includes a virtual source manipulation mechanism that positions the virtual source. The manipulation mechanism has a center of lateral pivot approximately coincident with a lateral index and a center of vertical pivot approximately coincident with a vertical index. The vertical index and lateral index intersect at an index origin. The virtual source and manipulation mechanism auto align the orientation line through the index origin during virtual source motion.

  20. Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment

    NASA Astrophysics Data System (ADS)

    Kim, Joonwoo; Jeong, Soon Moon; Jeong, Jaewook

    2015-11-01

    We fabricated depletion type, transparent amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) and inverters with an Ar plasma treatment and analyzed their scaling characteristics with channel lengths ranging from 2 to 100 µm. The improvement of the field-effect mobility of a-IGZO TFTs is apparent only for short channel lengths. There is also an unexpected side effect of the Ar plasma treatment, which introduces back-channel interfacial states and induces a positive shift in the threshold voltage of a-IGZO TFTs. The resulting increase in the field-effect mobility and the positive shift in the threshold voltage of each TFT increase the differential gain up to 3 times and the positive shift in the transient point of the transparent inverters.

  1. Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

    SciTech Connect

    Hanyu, Yuichiro Domen, Kay; Nomura, Kenji; Hiramatsu, Hidenori; Kamiya, Toshio; Kumomi, Hideya; Hosono, Hideo

    2013-11-11

    We report an experimental evidence that some hydrogens passivate electron traps in an amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO). The a-IGZO thin-film transistors (TFTs) annealed at 300 °C exhibit good operation characteristics; while those annealed at ≥400 °C show deteriorated ones. Thermal desorption spectra (TDS) of H{sub 2}O indicate that this threshold annealing temperature corresponds to depletion of H{sub 2}O desorption from the a-IGZO layer. Hydrogen re-doping by wet oxygen annealing recovers the good TFT characteristic. The hydrogens responsible for this passivation have specific binding energies corresponding to the desorption temperatures of 300–430 °C. A plausible structural model is suggested.

  2. Electroexplosive device

    NASA Technical Reports Server (NTRS)

    Menichelli, V. J. (Inventor)

    1978-01-01

    An electroexplosive device is presented which employs a header having contact pins hermetically sealed with glass passing through from a connector end of the header to a cavity filled with a shunt layer of a new nonlinear resistive composition and a heat-sink layer of a new dielectric composition having good thermal conductivity and capacity. The nonlinear resistive layer and the heat-sink layer are prepared from materials by mixing with a low temperature polymerizing resin. The resin is dissolved in a suitable solvent and later evaporated. The resultant solid composite is ground into a powder, press formed into the header and cured (polymerized) at about 250 to 300 F.

  3. Device Connectivity

    PubMed Central

    Walsh, John; Roberts, Ruth; Morris, Richard

    2015-01-01

    Patients with diabetes have to take numerous factors/data into their therapeutic decisions in daily life. Connecting the devices they are using by feeding the data generated into a database/app is supposed to help patients to optimize their glycemic control. As this is not established in practice, the different roadblocks have to be discussed to open the road. That large telecommunication companies are now entering this market might be a big help in pushing this forward. Smartphones offer an ideal platform for connectivity solutions. PMID:25614015

  4. OLED devices

    DOEpatents

    Sapochak, Linda Susan [Arlington, VA; Burrows, Paul Edward [Kennewick, WA; Bimalchandra, Asanga [Richland, WA

    2011-02-22

    An OLED device having an emission layer formed of an ambipolar phosphine oxide host material and a dopant, a hole transport layer in electrical communication with an anode, an electron transport layer in communication with a cathode, wherein the HOMO energy of the hole transport layer is substantially the same as the HOMO energy of the ambipolar host in the emission layer, and the LUMO energy of the electron transport layer is substantially the same as the LUMO energy of the ambipolar host in the emission layer.

  5. Electrospray device

    NASA Technical Reports Server (NTRS)

    Demmons, Nathaniel (Inventor); Martin, Roy (Inventor); Hruby, Vladimir (Inventor); Roy, Thomas (Inventor); Spence, Douglas (Inventor); Ehrbar, Eric (Inventor); Zwahlen, Jurg (Inventor)

    2011-01-01

    An electrospray device includes an electrospray emitter adapted to receive electrospray fluid; an extractor plate spaced from the electrospray emitter and having at least one aperture; and a power supply for applying a first voltage between the extractor plate and emitter for generating at least one Taylor cone emission through the aperture to create an electrospray plume from the electrospray fluid, the extractor plate as well as accelerator and shaping plates may include a porous, conductive medium for transporting and storing excess, accumulated electrospray fluid away from the aperture.

  6. Electrochromic device

    SciTech Connect

    Schwendemanm, Irina G.; Polcyn, Adam D.; Finley, James J.; Boykin, Cheri M.; Knowles, Julianna M.

    2011-03-15

    An electrochromic device includes a first substrate spaced from a second substrate. A first conductive member is formed over at least a portion of the first substrate. A first electrochromic material is formed over at least a portion of the first conductive member. The first electrochromic material includes an organic material. A second conductive member is formed over at least a portion of the second substrate. A second electrochromic material is formed over at least a portion of the second conductive member. The second electrochromic material includes an inorganic material. An ionic liquid is positioned between the first electrochromic material and the second electrochromic material.

  7. Diversionary device

    DOEpatents

    Grubelich, Mark C.

    2001-01-01

    A diversionary device has a housing having at least one opening and containing a non-explosive propellant and a quantity of fine powder packed within the housing, with the powder being located between the propellant and the opening. When the propellant is activated, it has sufficient energy to propel the powder through the opening to produce a cloud of powder outside the housing. An igniter is also provided for igniting the cloud of powder to create a diversionary flash and bang, but at a low enough pressure to avoid injuring nearby people.

  8. Conduction mechanism in amorphous InGaZnO thin film transistors

    NASA Astrophysics Data System (ADS)

    Bhoolokam, Ajay; Nag, Manoj; Steudel, Soeren; Genoe, Jan; Gelinck, Gerwin; Kadashchuk, Andrey; Groeseneken, Guido; Heremans, Paul

    2016-01-01

    We validate a model which is a combination of multiple trapping and release and percolation model for describing the conduction mechanism in amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT). We show that using just multiple trapping and release or percolation model is insufficient to explain TFT behavior as a function of temperature. We also show the intrinsic mobility is dependent on temperature due to scattering by ionic impurities or lattice. In solving the Poisson equation to find the surface potential and back potential as a function of gate voltage, we explicitly allow for the back surface to be floating, as is the case for a-IGZO transistors. The parameters for gap states, percolation barriers and intrinsic mobility at room temperature that we extract with this comprehensive model are in good agreement with those extracted in literature with partially-complete models.

  9. Optoelectronic device

    DOEpatents

    Bonekamp, Jeffrey E.; Boven, Michelle L.; Gaston, Ryan S.

    2014-09-09

    The invention is an optoelectronic device comprising an active portion which converts light to electricity or converts electricity to light, the active portion having a front side for the transmittal of the light and a back side opposite from the front side, at least two electrical leads to the active portion to convey electricity to or from the active portion, an enclosure surrounding the active portion and through which the at least two electrical leads pass wherein the hermetically sealed enclosure comprises at the front side of the active portion a barrier material which allows for transmittal of light, one or more getter materials disposed so as to not impede the transmission of light to or from the active portion, and a contiguous gap pathway to the getter material which pathway is disposed between the active portion and the barrier material.

  10. CLOSURE DEVICE

    DOEpatents

    Linzell, S.M.; Dorcy, D.J.

    1958-08-26

    A quick opening type of stuffing box employing two banks of rotatable shoes, each of which has a caraming action that forces a neoprene sealing surface against a pipe or rod where it passes through a wall is presented. A ring having a handle or wrench attached is placed eccentric to and between the two banks of shoes. Head bolts from the shoes fit into slots in this ring, which are so arranged that when the ring is rotated a quarter turn in one direction the shoes are thrust inwardly to cramp the neopnrene about the pipe, malting a tight seal. Moving the ring in the reverse direction moves the shoes outwardly and frees the pipe which then may be readily removed from the stuffing box. This device has particular application as a closure for the end of a coolant tube of a neutronic reactor.

  11. PLASMA DEVICE

    DOEpatents

    Baker, W.R.

    1961-08-22

    A device is described for establishing and maintaining a high-energy, rotational plasma for use as a fast discharge capacitor. A disc-shaped, current- conducting plasma is formed in an axinl magnetic field and a crossed electric field, thereby creating rotational kinetic enengy in the plasma. Such energy stored in the rotation of the plasma disc is substantial and is convertible tc electrical energy by generator action in an output line electrically coupled to the plasma volume. Means are then provided for discharging the electrical energy into an external circuit coupled to the output line to produce a very large pulse having an extremely rapid rise time in the waveform thereof. (AE C)

  12. Electrophoresis device

    NASA Technical Reports Server (NTRS)

    Rhodes, P. H.; Snyder, R. S. (Inventor)

    1982-01-01

    A device for separating cellular particles of a sample substance into fractionated streams of different cellular species includes a casing having a distribution chamber, a separation chamber, and a collection chamber. The electrode chambers are separated from the separation chamber interior by means of passages such that flow variations and membrane variations around the slotted portion of the electrode chamber do not enduce flow perturbations into the laminar buffer curtain flowing in the separation chamber. The cellular particles of the sample are separated under the influence of the electrical field and the separation chamber into streams of different cellular species. The streams of separated cells enter a partition array in the collection chamber where they are fractionated and collected.

  13. Integrated device architectures for electrochromic devices

    DOEpatents

    Frey, Jonathan Mack; Berland, Brian Spencer

    2015-04-21

    This disclosure describes systems and methods for creating monolithically integrated electrochromic devices which may be a flexible electrochromic device. Monolithic integration of thin film electrochromic devices may involve the electrical interconnection of multiple individual electrochromic devices through the creation of specific structures such as conductive pathway or insulating isolation trenches.

  14. Laser device

    DOEpatents

    Scott, Jill R.; Tremblay, Paul L.

    2004-11-23

    A laser device includes a target position, an optical component separated a distance J from the target position, and a laser energy source separated a distance H from the optical component, distance H being greater than distance J. A laser source manipulation mechanism exhibits a mechanical resolution of positioning the laser source. The mechanical resolution is less than a spatial resolution of laser energy at the target position as directed through the optical component. A vertical and a lateral index that intersect at an origin can be defined for the optical component. The manipulation mechanism can auto align laser aim through the origin during laser source motion. The laser source manipulation mechanism can include a mechanical index. The mechanical index can include a pivot point for laser source lateral motion and a reference point for laser source vertical motion. The target position can be located within an adverse environment including at least one of a high magnetic field, a vacuum system, a high pressure system, and a hazardous zone. The laser source and an electro-mechanical part of the manipulation mechanism can be located outside the adverse environment. The manipulation mechanism can include a Peaucellier linkage.

  15. Laser device

    DOEpatents

    Scott, Jill R.; Tremblay, Paul L.

    2007-07-10

    A laser device includes a target position, an optical component separated a distance J from the target position, and a laser energy source separated a distance H from the optical component, distance H being greater than distance J. A laser source manipulation mechanism exhibits a mechanical resolution of positioning the laser source. The mechanical resolution is less than a spatial resolution of laser energy at the target position as directed through the optical component. A vertical and a lateral index that intersect at an origin can be defined for the optical component. The manipulation mechanism can auto align laser aim through the origin during laser source motion. The laser source manipulation mechanism can include a mechanical index. The mechanical index can include a pivot point for laser source lateral motion and a reference point for laser source vertical motion. The target position can be located within an adverse environment including at least one of a high magnetic field, a vacuum system, a high pressure system, and a hazardous zone. The laser source and an electro-mechanical part of the manipulation mechanism can be located outside the adverse environment. The manipulation mechanism can include a Peaucellier linkage.

  16. Connector device for building integrated photovoltaic device

    DOEpatents

    Keenihan, James R.; Langmaid, Joseph A.; Eurich, Gerald K.; Lesniak, Michael J.; Mazor, Michael H.; Cleereman, Robert J.; Gaston, Ryan S.

    2014-06-03

    The present invention is premised upon a connector device and method that can more easily electrically connect a plurality of PV devices or photovoltaic system components and/or locate these devices/components upon a building structure. It also may optionally provide some additional sub-components (e.g. at least one bypass diode and/or an indicator means) and may enhance the serviceability of the device.

  17. Connector device for building integrated photovoltaic device

    DOEpatents

    Keenihan, James R.; Langmaid, Joe A.; Eurich, Gerald K.; Lesniak, Michael J.; Mazor, Michael H.; Cleerman, Robert J.; Gaston, Ryan S.

    2015-11-10

    The present invention is premised upon a connector device and method that can more easily electrically connect a plurality of PV devices or photovoltaic system components and/or locate these devices/components upon a building structure. It also may optionally provide some additional sub-components (e.g. at least one bypass diode and/or an indicator means) and may enhance the serviceability of the device.

  18. Infrared criminalistic devices

    NASA Astrophysics Data System (ADS)

    Gibin, Igor S.; Savkov, E. V.; Popov, Pavel G.

    1996-12-01

    We are presenting the devices of near-IR spectral range in this report. The devices may be used in criminalistics, in bank business, in restoration works, etc. the action principle of these devices is describing briefly.

  19. Medical Device Safety

    MedlinePlus

    A medical device is any product used to diagnose, cure, or treat a condition, or to prevent disease. They range ... may need one in a hospital. To use medical devices safely Know how your device works. Keep instructions ...

  20. Medical Device Safety

    MedlinePlus

    A medical device is any product used to diagnose, cure, or treat a condition, or to prevent disease. They ... may need one in a hospital. To use medical devices safely Know how your device works. Keep ...

  1. CONTROL LIMITER DEVICE

    DOEpatents

    DeShong, J.A.

    1960-03-01

    A control-limiting device for monltoring a control system is described. The system comprises a conditionsensing device, a condition-varying device exerting a control over the condition, and a control means to actuate the condition-varying device. A control-limiting device integrates the total movement or other change of the condition-varying device over any interval of time during a continuum of overlapping periods of time, and if the tothl movement or change of the condition-varying device exceeds a preset value, the control- limiting device will switch the control of the operated apparatus from automatic to manual control.

  2. Toward Active-Matrix Lab-On-A-Chip: Programmable Electrofluidic control Enaled by Arrayed Oxide Thin Film Transistors

    SciTech Connect

    Noh, Joo Hyon; Noh, Jiyong; Kreit, Eric; Heikenfeld, Jason; Rack, Philip D

    2012-01-01

    Agile micro- and nano-fluidic control is critical to numerous life science and chemical science synthesis as well as kinetic and thermodynamic studies. To this end, we have demonstrated the use of thin film transistor arrays as an active matrix addressing method to control an electrofluidic array. Because the active matrix method minimizes the number of control lines necessary (m + n lines for the m x n element array), the active matrix addressing method integrated with an electrofluidic platform can be a significant breakthrough for complex electrofluidic arrays (increased size or resolution) with enhanced function, agility and programmability. An amorphous indium gallium zinc oxide (a-IGZO) semiconductor active layer is used because of its high mobility of 1-15 cm{sup 2} V{sup -1} s{sup -1}, low-temperature processing and transparency for potential spectroscopy and imaging. Several electrofluidic functionalities are demonstrated using a simple 2 x 5 electrode array connected to a 2 x 5 IGZO thin film transistor array with the semiconductor channel width of 50 {mu}m and mobility of 6.3 cm{sup 2} V{sup -1} s{sup -1}. Additionally, using the TFT device characteristics, active matrix addressing schemes are discussed as the geometry of the electrode array can be tailored to act as a storage capacitor element. Finally, requisite material and device parameters are discussed in context with a VGA scale active matrix addressed electrofluidic platform.

  3. Implantable CMOS Biomedical Devices

    PubMed Central

    Ohta, Jun; Tokuda, Takashi; Sasagawa, Kiyotaka; Noda, Toshihiko

    2009-01-01

    The results of recent research on our implantable CMOS biomedical devices are reviewed. Topics include retinal prosthesis devices and deep-brain implantation devices for small animals. Fundamental device structures and characteristics as well as in vivo experiments are presented. PMID:22291554

  4. Fluid sampling device

    NASA Technical Reports Server (NTRS)

    Studenick, D. K. (Inventor)

    1977-01-01

    An inlet leak is described for sampling gases, more specifically, for selectively sampling multiple fluids. This fluid sampling device includes a support frame. A plurality of fluid inlet devices extend through the support frame and each of the fluid inlet devices include a longitudinal aperture. An opening device that is responsive to a control signal selectively opens the aperture to allow fluid passage. A closing device that is responsive to another control signal selectively closes the aperture for terminating further fluid flow.

  5. Liquid Crystal Devices.

    ERIC Educational Resources Information Center

    Bradshaw, Madeline J.

    1983-01-01

    The nature of liquid crystals and several important liquid crystal devices are described. Ideas for practical experiments to illustrate the properties of liquid crystals and their operation in devices are also described. (Author/JN)

  6. External incontinence devices

    MedlinePlus

    ... of products that are available in your area. URINARY INCONTINENCE DEVICES Urine collection devices are mainly used by ... urinary system References Payne CK. Conservative management of urinary incontinence: Behavioral and pelvic floor therapy, urethral and pelvic ...

  7. Medical device error.

    PubMed

    Goodman, Gerald R

    2002-12-01

    This article discusses principal concepts for the analysis, classification, and reporting of problems involving medical device technology. We define a medical device in regulatory terminology and define and discuss concepts and terminology used to distinguish the causes and sources of medical device problems. Database classification systems for medical device failure tracking are presented, as are sources of information on medical device failures. The importance of near-accident reporting is discussed to alert users that reported medical device errors are typically limited to those that have caused an injury or death. This can represent only a fraction of the true number of device problems. This article concludes with a summary of the most frequently reported medical device failures by technology type, clinical application, and clinical setting. PMID:12400632

  8. Pulse I–V characterization of a nano-crystalline oxide device with sub-gap density of states

    NASA Astrophysics Data System (ADS)

    Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun

    2016-05-01

    Understanding the charge trapping nature of nano-crystalline oxide semiconductor thin film transistors (TFTs) is one of the most important requirements for their successful application. In our investigation, we employed a fast-pulsed I–V technique for understanding the charge trapping phenomenon and for characterizing the intrinsic device performance of an amorphous/nano-crystalline indium-hafnium-zinc-oxide semiconductor TFT with varying density of states in the bulk. Because of the negligible transient charging effect with a very short pulse, the source-to-drain current obtained with the fast-pulsed I–V measurement was higher than that measured by the direct-current characterization method. This is because the fast-pulsed I–V technique provides a charge-trap free environment, suggesting that it is a representative device characterization methodology of TFTs. In addition, a pulsed source-to-drain current versus time plot was used to quantify the dynamic trapping behavior. We found that the charge trapping phenomenon in amorphous/nano-crystalline indium-hafnium-zinc-oxide TFTs is attributable to the charging/discharging of sub-gap density of states in the bulk and is dictated by multiple trap-to-trap processes.

  9. Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states.

    PubMed

    Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun

    2016-05-27

    Understanding the charge trapping nature of nano-crystalline oxide semiconductor thin film transistors (TFTs) is one of the most important requirements for their successful application. In our investigation, we employed a fast-pulsed I-V technique for understanding the charge trapping phenomenon and for characterizing the intrinsic device performance of an amorphous/nano-crystalline indium-hafnium-zinc-oxide semiconductor TFT with varying density of states in the bulk. Because of the negligible transient charging effect with a very short pulse, the source-to-drain current obtained with the fast-pulsed I-V measurement was higher than that measured by the direct-current characterization method. This is because the fast-pulsed I-V technique provides a charge-trap free environment, suggesting that it is a representative device characterization methodology of TFTs. In addition, a pulsed source-to-drain current versus time plot was used to quantify the dynamic trapping behavior. We found that the charge trapping phenomenon in amorphous/nano-crystalline indium-hafnium-zinc-oxide TFTs is attributable to the charging/discharging of sub-gap density of states in the bulk and is dictated by multiple trap-to-trap processes. PMID:27094772

  10. Pulse detecting device

    DOEpatents

    Riggan, W.C.

    1984-01-01

    A device for measuring particle flux comprises first and second photodiode detectors for receiving flux from a source and first and second outputs for producing first and second signals representing the flux incident to the detectors. The device is capable of reducing the first output signal by a portion of the second output signal, thereby enhancing the accuracy of the device. Devices in accordance with the invention may measure distinct components of flux from a single source or fluxes from several sources.

  11. GAS DISCHARGE DEVICES

    DOEpatents

    Arrol, W.J.; Jefferson, S.

    1957-08-27

    The construction of gas discharge devices where the object is to provide a gas discharge device having a high dark current and stabilized striking voltage is described. The inventors have discovered that the introduction of tritium gas into a discharge device with a subsequent electrical discharge in the device will deposit tritium on the inside of the chamber. The tritium acts to emit beta rays amd is an effective and non-hazardous way of improving the abovementioned discharge tube characteristics

  12. Flexible thermal device

    NASA Technical Reports Server (NTRS)

    Wallace, S. D.; Elliott, D. H.

    1972-01-01

    Fabrication of expansion joint, vibration isolator device with sufficient cross sectional area for high thermal conductivity is discussed. Device consists of multiple layers of metal foil which may be designed to meet specific applications. Thermodynamic properties of the device and illustration of construction are provided.

  13. Amorphous silicon photovoltaic devices

    SciTech Connect

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  14. Photovoltaic device and method

    DOEpatents

    Cleereman, Robert J; Lesniak, Michael J; Keenihan, James R; Langmaid, Joe A; Gaston, Ryan; Eurich, Gerald K; Boven, Michelle L

    2015-01-27

    The present invention is premised upon an improved photovoltaic device ("PVD") and method of use, more particularly to an improved photovoltaic device with an integral locator and electrical terminal mechanism for transferring current to or from the improved photovoltaic device and the use as a system.

  15. Organic photosensitive devices

    DOEpatents

    Rand, Barry P; Forrest, Stephen R

    2013-11-26

    The present invention generally relates to organic photosensitive optoelectronic devices. More specifically, it is directed to organic photosensitive optoelectronic devices having a photoactive organic region containing encapsulated nanoparticles that exhibit plasmon resonances. An enhancement of the incident optical field is achieved via surface plasmon polariton resonances. This enhancement increases the absorption of incident light, leading to a more efficient device.

  16. Photovoltaic device and method

    SciTech Connect

    Cleereman, Robert; Lesniak, Michael J.; Keenihan, James R.; Langmaid, Joe A.; Gaston, Ryan; Eurich, Gerald K.; Boven, Michelle L.

    2015-11-24

    The present invention is premised upon an improved photovoltaic device ("PVD") and method of use, more particularly to an improved photovoltaic device with an integral locator and electrical terminal mechanism for transferring current to or from the improved photovoltaic device and the use as a system.

  17. Articulating feedstock delivery device

    DOEpatents

    Jordan, Kevin

    2013-11-05

    A fully articulable feedstock delivery device that is designed to operate at pressure and temperature extremes. The device incorporates an articulating ball assembly which allows for more accurate delivery of the feedstock to a target location. The device is suitable for a variety of applications including, but not limited to, delivery of feedstock to a high-pressure reaction chamber or process zone.

  18. Biomechanics of interspinous devices.

    PubMed

    Parchi, Paolo D; Evangelisti, Gisberto; Vertuccio, Antonella; Piolanti, Nicola; Andreani, Lorenzo; Cervi, Valentina; Giannetti, Christian; Calvosa, Giuseppe; Lisanti, Michele

    2014-01-01

    A number of interspinous devices (ISD) have been introduced in the lumbar spine implant market. Unfortunately, the use of these devices often is not associated with real comprehension of their biomechanical role. The aim of this paper is to review the biomechanical studies about interspinous devices available in the literature to allow the reader a better comprehension of the effects of these devices on the treated segment and on the adjacent segments of the spine. For this reason, our analysis will be limited to the interspinous devices that have biomechanical studies published in the literature. PMID:25114923

  19. Biomechanics of Interspinous Devices

    PubMed Central

    Parchi, Paolo D.; Evangelisti, Gisberto; Vertuccio, Antonella; Piolanti, Nicola; Andreani, Lorenzo; Cervi, Valentina; Giannetti, Christian; Calvosa, Giuseppe; Lisanti, Michele

    2014-01-01

    A number of interspinous devices (ISD) have been introduced in the lumbar spine implant market. Unfortunately, the use of these devices often is not associated with real comprehension of their biomechanical role. The aim of this paper is to review the biomechanical studies about interspinous devices available in the literature to allow the reader a better comprehension of the effects of these devices on the treated segment and on the adjacent segments of the spine. For this reason, our analysis will be limited to the interspinous devices that have biomechanical studies published in the literature. PMID:25114923

  20. Solid state devices

    NASA Technical Reports Server (NTRS)

    1991-01-01

    The Solid State Device research program is directed toward developing innovative devices for space remote and in-situ sensing, and for data processing. Innovative devices can result from the standard structures in innovative materials such as low and high temperature superconductors, strained layer superlattices, or diamond films. Innovative devices can also result from innovative structures achieved using electron tunneling or nanolithography in standard materials. A final step is to use both innovative structures and innovative materials. A new area of emphasis is the miniaturization of sensors and instruments molded by using the techniques of electronic device fabrication to micromachine silicon into micromechanical and electromechanical sensors and actuators.

  1. Portable data collection device

    DOEpatents

    French, Patrick D.

    1996-01-01

    The present invention provides a portable data collection device that has a variety of sensors that are interchangeable with a variety of input ports in the device. The various sensors include a data identification feature that provides information to the device regarding the type of physical data produced by each sensor and therefore the type of sensor itself. The data identification feature enables the device to locate the input port where the sensor is connected and self adjust when a sensor is removed or replaced. The device is able to collect physical data, whether or not a function of a time.

  2. Thermionic deposition devices (survey)

    SciTech Connect

    Saenko, V.A.

    1985-11-01

    Various devices for the deposition of thin films and coatings from a plasma of solid-phase-material vapor are surveyed. The devices operate by vaporization and ionization of the working material in a vacuum. The classification, parameters, designs and development trends of thermionic devices (plasma vaporizers) are examined. Their characteristics and areas of application in modern high-energy plasma technology are described. The relative simplicity of the design and operation of the devices should allow them to be widely used not only in the laboratory but also in industry. The first manufactured units with thermionic devices and some of the properties of the films they produce are described.

  3. Active cleaning technique device

    NASA Technical Reports Server (NTRS)

    Shannon, R. L.; Gillette, R. B.

    1973-01-01

    The objective of this program was to develop a laboratory demonstration model of an active cleaning technique (ACT) device. The principle of this device is based primarily on the technique for removing contaminants from optical surfaces. This active cleaning technique involves exposing contaminated surfaces to a plasma containing atomic oxygen or combinations of other reactive gases. The ACT device laboratory demonstration model incorporates, in addition to plasma cleaning, the means to operate the device as an ion source for sputtering experiments. The overall ACT device includes a plasma generation tube, an ion accelerator, a gas supply system, a RF power supply and a high voltage dc power supply.

  4. Unitary lens semiconductor device

    DOEpatents

    Lear, K.L.

    1997-05-27

    A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

  5. Unitary lens semiconductor device

    DOEpatents

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  6. Portable data collection device

    DOEpatents

    French, P.D.

    1996-06-11

    The present invention provides a portable data collection device that has a variety of sensors that are interchangeable with a variety of input ports in the device. The various sensors include a data identification feature that provides information to the device regarding the type of physical data produced by each sensor and therefore the type of sensor itself. The data identification feature enables the device to locate the input port where the sensor is connected and self adjust when a sensor is removed or replaced. The device is able to collect physical data, whether or not a function of a time. 7 figs.

  7. Simple method to enhance positive bias stress stability of In-Ga-Zn-O thin-film transistors using a vertically graded oxygen-vacancy active layer.

    PubMed

    Park, Ji Hoon; Kim, Yeong-Gyu; Yoon, Seokhyun; Hong, Seonghwan; Kim, Hyun Jae

    2014-12-10

    We proposed a simple method to deposit a vertically graded oxygen-vacancy active layer (VGA) to enhance the positive bias stress (PBS) stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). We deposited a-IGZO films by sputtering (target composition; In2O3:Ga2O3:ZnO = 1:1:1 mol %), and the oxygen partial pressure was varied during deposition so that the front channel of the TFTs was fabricated with low oxygen partial pressure and the back channel with high oxygen partial pressure. Using this method, we were able to control the oxygen vacancy concentration of the active layer so that it varied with depth. As a result, the turn-on voltage shift following a 10 000 s PBS of optimized VGA TFT was drastically improved from 12.0 to 5.6 V compared with a conventional a-IGZO TFT, without a significant decrease in the field effect mobility. These results came from the self-passivation effect and decrease in oxygen-vacancy-related trap sites of the VGA TFTs. PMID:25402628

  8. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness.

    PubMed

    Kim, Ye Kyun; Ahn, Cheol Hyoun; Yun, Myeong Gu; Cho, Sung Woon; Kang, Won Jun; Cho, Hyung Koun

    2016-01-01

    In this paper, a simple and controllable "wet pulse annealing" technique for the fabrication of flexible amorphous InGaZnO thin film transistors (a-IGZO TFTs) processed at low temperature (150 °C) by using scalable vacuum deposition is proposed. This method entailed the quick injection of water vapor for 0.1 s and purge treatment in dry ambient in one cycle; the supply content of water vapor was simply controlled by the number of pulse repetitions. The electrical transport characteristics revealed a remarkable performance of the a-IGZO TFTs prepared at the maximum process temperature of 150 °C (field-effect mobility of 13.3 cm(2) V(-1) s(-1); Ion/Ioff ratio ≈ 10(8); reduced I-V hysteresis), comparable to that of a-IGZO TFTs annealed at 350 °C in dry ambient. Upon analysis of the angle-resolved x-ray photoelectron spectroscopy, the good performance was attributed to the effective suppression of the formation of hydroxide and oxygen-related defects. Finally, by using the wet pulse annealing process, we fabricated, on a plastic substrate, an ultrathin flexible a-IGZO TFT with good electrical and bending performances. PMID:27198067

  9. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness

    PubMed Central

    Kim, Ye Kyun; Ahn, Cheol Hyoun; Yun, Myeong Gu; Cho, Sung Woon; Kang, Won Jun; Cho, Hyung Koun

    2016-01-01

    In this paper, a simple and controllable “wet pulse annealing” technique for the fabrication of flexible amorphous InGaZnO thin film transistors (a-IGZO TFTs) processed at low temperature (150 °C) by using scalable vacuum deposition is proposed. This method entailed the quick injection of water vapor for 0.1 s and purge treatment in dry ambient in one cycle; the supply content of water vapor was simply controlled by the number of pulse repetitions. The electrical transport characteristics revealed a remarkable performance of the a-IGZO TFTs prepared at the maximum process temperature of 150 °C (field-effect mobility of 13.3 cm2 V−1 s−1; Ion/Ioff ratio ≈ 108; reduced I-V hysteresis), comparable to that of a-IGZO TFTs annealed at 350 °C in dry ambient. Upon analysis of the angle-resolved x-ray photoelectron spectroscopy, the good performance was attributed to the effective suppression of the formation of hydroxide and oxygen-related defects. Finally, by using the wet pulse annealing process, we fabricated, on a plastic substrate, an ultrathin flexible a-IGZO TFT with good electrical and bending performances. PMID:27198067

  10. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness

    NASA Astrophysics Data System (ADS)

    Kim, Ye Kyun; Ahn, Cheol Hyoun; Yun, Myeong Gu; Cho, Sung Woon; Kang, Won Jun; Cho, Hyung Koun

    2016-05-01

    In this paper, a simple and controllable “wet pulse annealing” technique for the fabrication of flexible amorphous InGaZnO thin film transistors (a-IGZO TFTs) processed at low temperature (150 °C) by using scalable vacuum deposition is proposed. This method entailed the quick injection of water vapor for 0.1 s and purge treatment in dry ambient in one cycle; the supply content of water vapor was simply controlled by the number of pulse repetitions. The electrical transport characteristics revealed a remarkable performance of the a-IGZO TFTs prepared at the maximum process temperature of 150 °C (field-effect mobility of 13.3 cm2 V‑1 s‑1 Ion/Ioff ratio ≈ 108 reduced I-V hysteresis), comparable to that of a-IGZO TFTs annealed at 350 °C in dry ambient. Upon analysis of the angle-resolved x-ray photoelectron spectroscopy, the good performance was attributed to the effective suppression of the formation of hydroxide and oxygen-related defects. Finally, by using the wet pulse annealing process, we fabricated, on a plastic substrate, an ultrathin flexible a-IGZO TFT with good electrical and bending performances.

  11. Direct electrostatic toner marking with poly(3,4-ethylenedioxythiophene)polystyrenesulfonate bilayer devices

    NASA Astrophysics Data System (ADS)

    Kanungo, Mandakini; Law, Kock-Yee; Zhang, Yuanjia

    2012-10-01

    photoreceptor with the PEDOT bilayer device that is controlled by an active backplane. The operating bias estimated for the Thin Film Transistors (TFTs) in the backplane is about -200 V. We believe that the bias voltage can be further reduced by using a thinner charge transport layer and by optimizing the toner development process. Although the bias voltage is still high, it is within reach for today's high-voltage TFT technology.

  12. DEVICE CONTROLLER, CAMERA CONTROL

    1998-07-20

    This is a C++ application that is the server for the cameral control system. Devserv drives serial devices, such as cameras and videoswitchers used in a videoconference, upon request from a client such as the camxfgbfbx ccint program. cc Deverv listens on UPD ports for clients to make network contractions. After a client connects and sends a request to control a device (such as to pan,tilt, or zooma camera or do picture-in-picture with a videoswitcher),more » devserv formats the request into an RS232 message appropriate for the device and sends this message over the serial port to which the device is connected. Devserv then reads the reply from the device from the serial port to which the device is connected. Devserv then reads the reply from the device from the serial port and then formats and sends via multicast a status message. In addition, devserv periodically multicasts status or description messages so that all clients connected to the multicast channel know what devices are supported and their ranges of motion and the current position. The software design employs a class hierarchy such that an abstract base class for devices can be subclassed into classes for various device categories(e.g. sonyevid30, cononvco4, panasonicwjmx50, etc.). which are further subclassed into classes for various device categories. The devices currently supported are the Sony evi-D30, Canon, VCC1, Canon VCC3, and Canon VCC4 cameras and the Panasonic WJ-MX50 videoswitcher. However, developers can extend the class hierarchy to support other devices.« less

  13. DEVICE CONTROLLER, CAMERA CONTROL

    SciTech Connect

    Perry, Marcia

    1998-07-20

    This is a C++ application that is the server for the cameral control system. Devserv drives serial devices, such as cameras and videoswitchers used in a videoconference, upon request from a client such as the camxfgbfbx ccint program. cc Deverv listens on UPD ports for clients to make network contractions. After a client connects and sends a request to control a device (such as to pan,tilt, or zooma camera or do picture-in-picture with a videoswitcher), devserv formats the request into an RS232 message appropriate for the device and sends this message over the serial port to which the device is connected. Devserv then reads the reply from the device from the serial port to which the device is connected. Devserv then reads the reply from the device from the serial port and then formats and sends via multicast a status message. In addition, devserv periodically multicasts status or description messages so that all clients connected to the multicast channel know what devices are supported and their ranges of motion and the current position. The software design employs a class hierarchy such that an abstract base class for devices can be subclassed into classes for various device categories(e.g. sonyevid30, cononvco4, panasonicwjmx50, etc.). which are further subclassed into classes for various device categories. The devices currently supported are the Sony evi-D30, Canon, VCC1, Canon VCC3, and Canon VCC4 cameras and the Panasonic WJ-MX50 videoswitcher. However, developers can extend the class hierarchy to support other devices.

  14. Sensor sentinel computing device

    DOEpatents

    Damico, Joseph P.

    2016-08-02

    Technologies pertaining to authenticating data output by sensors in an industrial environment are described herein. A sensor sentinel computing device receives time-series data from a sensor by way of a wireline connection. The sensor sentinel computing device generates a validation signal that is a function of the time-series signal. The sensor sentinel computing device then transmits the validation signal to a programmable logic controller in the industrial environment.

  15. Barrier breaching device

    DOEpatents

    Honodel, C.A.

    1983-06-01

    A barrier breaching device that is designed primarily for opening holes in interior walls of buildings uses detonating fuse for explosive force. The fuse acts as the ribs or spokes of an umbrella-like device that may be opened up to form a cone. The cone is placed against the wall so that detonating fuse that rings the base of the device and which is ignited by the spoke-like fuses serves to cut a circular hole in the wall.

  16. Barrier breaching device

    DOEpatents

    Honodel, Charles A.

    1985-01-01

    A barrier breaching device that is designed primarily for opening holes in interior walls of buildings uses detonating fuse for explosive force. The fuse acts as the ribs or spokes of an umbrella-like device that may be opened up to form a cone. The cone is placed against the wall so that detonating fuse that rings the base of the device and which is ignited by the spoke-like fuses serves to cut a circular hole in the wall.

  17. New Medical Device Evaluation.

    PubMed

    Ikeda, Koji

    2016-01-01

    In this presentation, as a member of the Harmonization by Doing (HBD) project, I discuss the significance of regulatory science in global medical device development and our experience in the international collaboration process for medical devices. In Japan, most innovative medical therapeutic devices were previously developed and exported by foreign-based companies. Due to this device lag, Japanese had minimal opportunities for receiving treatment with innovative medical devices. To address this issue, the Japanese government has actively accepted foreign clinical trial results and promoted global clinical trials in projects such as HBD. HBD is a project with stakeholders from academia, regulatory authorities, and industry in the US and Japan to promote global clinical trials and reduce device lags. When the project started, medical device clinical trials were not actively conducted in Japan at not just hospitals but also at medical device companies. We started to identify issues under the concept of HBD. After 10 years, we have now become key members in global clinical trials and able to obtain approvals without delay. Recently, HBD has started promoting international convergence. Physicians and regulatory authorities play central roles in compiling guidelines for the clinical evaluation of medical device development, which will be a more active field in the near future. The guidelines compiled will be confirmed with members of academia and regulatory authorities in the United Sates. PMID:27040333

  18. High efficiency photovoltaic device

    DOEpatents

    Guha, Subhendu; Yang, Chi C.; Xu, Xi Xiang

    1999-11-02

    An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.

  19. Active multistable twisting device

    NASA Technical Reports Server (NTRS)

    Schultz, Marc R. (Inventor)

    2008-01-01

    Two similarly shaped, such as rectangular, shells are attached to one another such that they form a resulting thin airfoil-like structure. The resulting device has at least two stable equilibrium shapes. The device can be transformed from one shape to another with a snap-through action. One or more actuators can be used to effect the snap-through; i.e., transform the device from one stable shape to another. Power to the actuators is needed only to transform the device from one shape to another.

  20. Benchmarking emerging logic devices

    NASA Astrophysics Data System (ADS)

    Nikonov, Dmitri

    2014-03-01

    As complementary metal-oxide-semiconductor field-effect transistors (CMOS FET) are being scaled to ever smaller sizes by the semiconductor industry, the demand is growing for emerging logic devices to supplement CMOS in various special functions. Research directions and concepts of such devices are overviewed. They include tunneling, graphene based, spintronic devices etc. The methodology to estimate future performance of emerging (beyond CMOS) devices and simple logic circuits based on them is explained. Results of benchmarking are used to identify more promising concepts and to map pathways for improvement of beyond CMOS computing.

  1. Ion trap device

    DOEpatents

    Ibrahim, Yehia M.; Smith, Richard D.

    2016-01-26

    An ion trap device is disclosed. The device includes a series of electrodes that define an ion flow path. A radio frequency (RF) field is applied to the series of electrodes such that each electrode is phase shifted approximately 180 degrees from an adjacent electrode. A DC voltage is superimposed with the RF field to create a DC gradient to drive ions in the direction of the gradient. A second RF field or DC voltage is applied to selectively trap and release the ions from the device. Further, the device may be gridless and utilized at high pressure.

  2. Pyrotechnic device technology

    SciTech Connect

    Wilcox, P.D.

    1989-01-01

    This talk was given at the 14th International Pyrotechnic Seminar on September 21, 1989, in Jersey, United Kingdom, as one of two plenary lectures. It briefly surveys the current technology of pyrotechnic devices and examines trends for the future. The pyrotechnic'' can have several meanings. In this talk, pyrotechnic devices'' are devices in which porous materials undergo reduction-oxidation reactions and produce useful products. The pyrotechnic materials are generally fuel-oxidizer systems without binders, in contrast to primary or secondary explosives or propellants. The word pyrotechnic'' is often used to include explosive, squib, propellant, or other ordnance type devices, especially in the European community. The major need for pyrotechnic devices has always been military and defense; however, as technology advances, the civilian uses of pyrotechnics will continue to grow. If every automobile had a pyrotechnic device to trigger its air or crash bag, that application alone would mean millions of devices per year. Applications in safety, fire fighting, law enforcement, and other commercial applications are likely to increase due to the increased capability of pyrotechnic devices and the integration of such devices in system designs. 2 refs., 56 figs.

  3. Interconnected semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  4. Mechanical Device Traces Parabolas

    NASA Technical Reports Server (NTRS)

    Soper, Terry A.

    1989-01-01

    Mechanical device simplifies generation of parabolas of various focal lengths. Based on fundamental geometrical construction of parabola. Constancy of critical total distance enforced by maintaining cable in tension. Applications of device include design of paraboloidal antennas, approximating catenaries on drawings of powerlines or long-wire antennas, and general tracing of parabolas on drawings.

  5. Devices and Educational Change

    ERIC Educational Resources Information Center

    Nespor, Jan

    2011-01-01

    This paper uses Actor Network Theory to examine two cases of device-mediated educational change, one involving a computer-assisted interactive video module that provided a half-hour of instruction for a university course, the other an assistive communication device that proved a supposedly retarded pre-school child to be intelligent. The paper…

  6. Self-actuated device

    DOEpatents

    Hecht, Samuel L.

    1984-01-01

    A self-actuated device, of particular use as a valve or an orifice for nuclear reactor fuel and blanket assemblies, in which a gas produced by a neutron induced nuclear reaction gradually accumulates as a function of neutron fluence. The gas pressure increase occasioned by such accumulation of gas is used to actuate the device.

  7. Advanced resistive exercise device

    NASA Technical Reports Server (NTRS)

    Raboin, Jasen L. (Inventor); Niebuhr, Jason (Inventor); Cruz, Santana F. (Inventor); Lamoreaux, Christopher D. (Inventor)

    2008-01-01

    The present invention relates to an exercise device, which includes a vacuum cylinder and a flywheel. The flywheel provides an inertial component to the load, which is particularly well suited for use in space as it simulates exercising under normal gravity conditions. Also, the present invention relates to an exercise device, which has a vacuum cylinder and a load adjusting armbase assembly.

  8. Device for removing blackheads

    DOEpatents

    Berkovich, Tamara

    1995-03-07

    A device for removing blackheads from pores in the skin having a elongated handle with a spoon shaped portion mounted on one end thereof, the spoon having multiple small holes piercing therethrough. Also covered is method for using the device to remove blackheads.

  9. Microfabricated particle focusing device

    DOEpatents

    Ravula, Surendra K.; Arrington, Christian L.; Sigman, Jennifer K.; Branch, Darren W.; Brener, Igal; Clem, Paul G.; James, Conrad D.; Hill, Martyn; Boltryk, Rosemary June

    2013-04-23

    A microfabricated particle focusing device comprises an acoustic portion to preconcentrate particles over large spatial dimensions into particle streams and a dielectrophoretic portion for finer particle focusing into single-file columns. The device can be used for high throughput assays for which it is necessary to isolate and investigate small bundles of particles and single particles.

  10. STORM INLET FILTRATION DEVICE

    EPA Science Inventory

    Five field tests were conducted to evaluate the effectiveness of the Storm and Groundwater Enhancement Systems (SAGES) device for removing contaminants from stormwater. The SAGES device is a three-stage filtering system that could be used as a best management practices (BMP) retr...

  11. Capillary interconnect device

    SciTech Connect

    Renzi, Ronald F

    2013-11-19

    An interconnecting device for connecting a plurality of first fluid-bearing conduits to a corresponding plurality of second fluid-bearing conduits thereby providing fluid communication between the first fluid-bearing conduits and the second fluid-bearing conduits. The device includes a manifold and one or two ferrule plates that are held by compressive axial forces.

  12. Heat tube device

    NASA Technical Reports Server (NTRS)

    Khattar, Mukesh K. (Inventor)

    1990-01-01

    The present invention discloses a heat tube device through which a working fluid can be circulated to transfer heat to air in a conventional air conditioning system. The heat tube device is disposable about a conventional cooling coil of the air conditioning system and includes a plurality of substantially U-shaped tubes connected to a support structure. The support structure includes members for allowing the heat tube device to be readily positioned about the cooling coil. An actuatable adjustment device is connected to the U-shaped tubes for allowing, upon actuation thereof, for the heat tubes to be simultaneously rotated relative to the cooling coil for allowing the heat transfer from the heat tube device to air in the air conditioning system to be selectively varied.

  13. Fluidic nanotubes and devices

    DOEpatents

    Yang, Peidong; He, Rongrui; Goldberger, Joshua; Fan, Rong; Wu, Yiying; Li, Deyu; Majumdar, Arun

    2008-04-08

    Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

  14. Fluidic nanotubes and devices

    DOEpatents

    Yang, Peidong; He, Rongrui; Goldberger, Joshua; Fan, Rong; Wu, Yiying; Li, Deyu; Majumdar, Arun

    2010-01-10

    Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

  15. Device for cutting protrusions

    DOEpatents

    Bzorgi, Fariborz M.

    2011-07-05

    An apparatus for clipping a protrusion of material is provided. The protrusion may, for example, be a bolt head, a nut, a rivet, a weld bead, or a temporary assembly alignment tab protruding from a substrate surface of assembled components. The apparatus typically includes a cleaver having a cleaving edge and a cutting blade having a cutting edge. Generally, a mounting structure configured to confine the cleaver and the cutting blade and permit a range of relative movement between the cleaving edge and the cutting edge is provided. Also typically included is a power device coupled to the cutting blade. The power device is configured to move the cutting edge toward the cleaving edge. In some embodiments the power device is activated by a momentary switch. A retraction device is also generally provided, where the retraction device is configured to move the cutting edge away from the cleaving edge.

  16. Planar electrochemical device assembly

    DOEpatents

    Jacobson; Craig P. , Visco; Steven J. , De Jonghe; Lutgard C.

    2010-11-09

    A pre-fabricated electrochemical device having a dense electrolyte disposed between an anode and a cathode preferably deposited as thin films is bonded to a porous electrically conductive support. A second porous electrically conductive support may be bonded to a counter electrode of the electrochemical device. Multiple electrochemical devices may be bonded in parallel to a single porous support, such as a perforated sheet to provide a planar array. Planar arrays may be arranged in a stacked interconnected array. A method of making a supported electrochemical device is disclosed wherein the method includes a step of bonding a pre-fabricated electrochemical device layer to an existing porous metal or porous metal alloy layer.

  17. Planar electrochemical device assembly

    DOEpatents

    Jacobson, Craig P.; Visco, Steven J.; De Jonghe, Lutgard C.

    2007-06-19

    A pre-fabricated electrochemical device having a dense electrolyte disposed between an anode and a cathode preferably deposited as thin films is bonded to a porous electrically conductive support. A second porous electrically conductive support may be bonded to a counter electrode of the electrochemical device. Multiple electrochemical devices may be bonded in parallel to a single porous support, such as a perforated sheet to provide a planar array. Planar arrays may be arranged in a stacked interconnected array. A method of making a supported electrochemical device is disclosed wherein the method includes a step of bonding a pre-fabricated electrochemical device layer to an existing porous metal or porous metal alloy layer.

  18. Medical devices; device tracking. Final rule.

    PubMed

    2002-02-01

    The Food and Drug Administration (FDA) is amending the medical device tracking regulation. FDA is making substantive changes to revise the scope of the regulation and add certain patient confidentiality requirements, and nonsubstantive changes to remove outdated references and simplify terminology. These revisions are made to conform the regulation to changes made in section 519(e) of the Federal Food, Drug, and Cosmetic Act (the act) by the FDA Modernization Act of 1997 (FDAMA), and to simplify certain requirements. PMID:11838471

  19. Improved Mobility and Bias Stability of Thin Film Transistors Using the Double-Layer a-InGaZnO/a-InGaZnO:N Channel.

    PubMed

    Yu, H; Zhang, L; Li, X H; Xu, H Y; Liu, Y C

    2016-04-01

    The amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were demonstrated based on a double-layer channel structure, where the channel is composed of an ultrathin nitro-genated a-IGZO (a-IGZO:N) layer and an undoped a-IGZO layer. The double-layer channel device showed higher saturation mobility and lower threshold-voltage shift (5.74 cm2/Vs, 2.6 V) compared to its single-layer counterpart (0.17 cm2/Vs, 7.23 V). The improvement can be attributed to three aspects: (1) improved carrier transport properties of the channel by the a-IGZO:N layer with high carrier mobility and the a-IGZO layer with high carrier concentration, (2) reduced interfacial trap density between the active channel and the gate insulator, and (3) higher surface flatness of the double-layer channel. Our study reveals key insights into double-layer channel, involving selecting more suitable electrical property for back-channel layer and more suitable interface modification for active layer. Meanwhile, room temperature fabrication amorphous TFTs offer certain advantages on better flexibility and higher uniformity over a large area. PMID:27451684

  20. Automobile maneuvering device

    SciTech Connect

    Ricciardi, R.

    1987-08-18

    An automobile maneuvering device is described which consists of: a chassis comprising transport wheels for permitting movement of the device along the ground, a drive wheel operably rotatably connected to the chassis, and means for rotating the drive wheel, clamp means operably connected to the chassis and spaced from and opposed to the drive wheel, the chassis including means to move the clamp means to engage one portion of an automobile tire with the drive wheel engaged at another portion of the automobile tire, and means to actuate the rotating means, so that with rotation of the drive wheel the automobile tire is rotated and the automobile and device moved along the ground.

  1. Contamination sampling device

    NASA Technical Reports Server (NTRS)

    Delgado, Felix A. (Inventor); Stern, Susan M. (Inventor)

    1998-01-01

    A contamination sample collection device has a wooden dowel with a cotton swab at one end, the cotton being covered by a nylon cloth and the wooden dowel being encapsulated by plastic tubing which is heat shrunk onto the dowel and onto a portion of the cotton swab to secure the cotton in place. Another plastic tube is heat shrunk onto the plastic that encapsulates the dowel and a portion of the nylon cloth to secure the nylon cloth in place. The device may thereafter be covered with aluminum foil protector. The device may be used for obtaining samples of contamination in clean room environments.

  2. INTERNAL CUTTING DEVICE

    DOEpatents

    Russell, W.H. Jr.

    1959-06-30

    A device is described for removing material from the interior of a hollow workpiece so as to form a true spherical internal surface in a workpiece, or to cut radial slots of an adjustable constant depth in an already established spherical internal surface. This is accomplished by a spring loaded cutting tool adapted to move axially wherein the entire force urging the tool against the workpiece is derived from the spring. Further features of importance involve the provision of a seal between the workpiece and the cutting device and a suction device for carrying away particles of removed material.

  3. Rain sampling device

    DOEpatents

    Nelson, Danny A.; Tomich, Stanley D.; Glover, Donald W.; Allen, Errol V.; Hales, Jeremy M.; Dana, Marshall T.

    1991-01-01

    The present invention constitutes a rain sampling device adapted for independent operation at locations remote from the user which allows rainfall to be sampled in accordance with any schedule desired by the user. The rain sampling device includes a mechanism for directing wet precipitation into a chamber, a chamber for temporarily holding the precipitation during the process of collection, a valve mechanism for controllably releasing samples of said precipitation from said chamber, a means for distributing the samples released from the holding chamber into vessels adapted for permanently retaining these samples, and an electrical mechanism for regulating the operation of the device.

  4. Rain sampling device

    DOEpatents

    Nelson, D.A.; Tomich, S.D.; Glover, D.W.; Allen, E.V.; Hales, J.M.; Dana, M.T.

    1991-05-14

    The present invention constitutes a rain sampling device adapted for independent operation at locations remote from the user which allows rainfall to be sampled in accordance with any schedule desired by the user. The rain sampling device includes a mechanism for directing wet precipitation into a chamber, a chamber for temporarily holding the precipitation during the process of collection, a valve mechanism for controllably releasing samples of the precipitation from the chamber, a means for distributing the samples released from the holding chamber into vessels adapted for permanently retaining these samples, and an electrical mechanism for regulating the operation of the device. 11 figures.

  5. Corrosion Detection Devices

    SciTech Connect

    Howard, B.

    2003-12-01

    Nondestructive Examination Systems' (NDE) specialists at the Department of Energy's Savannah River Site have unique, remotely controllable, corrosion detection capabilities. The corrosion detection devices most frequently used are automated ultrasonic mapping systems, digital radiography imaging devices, infrared imaging, and eddy current mapping systems. These devices have been successfully used in a variety of applications, some of which involve high levels of background radiation. Not only is corrosion located and mapped but other types of anomalies such as cracks have been detected and characterized. Examples of actual corrosion that has been detected will be discussed along with the NDE systems that were used.

  6. Optically detonated explosive device

    NASA Technical Reports Server (NTRS)

    Yang, L. C.; Menichelli, V. J. (Inventor)

    1974-01-01

    A technique and apparatus for optically detonating insensitive high explosives, is disclosed. An explosive device is formed by containing high explosive material in a house having a transparent window. A thin metallic film is provided on the interior surface of the window and maintained in contact with the high explosive. A laser pulse provided by a Q-switched laser is focussed on the window to vaporize the metallic film and thereby create a shock wave which detonates the high explosive. Explosive devices may be concurrently or sequentially detonated by employing a fiber optic bundle to transmit the laser pulse to each of the several individual explosive devices.

  7. SLUG HANDLING DEVICES

    DOEpatents

    Gentry, J.R.

    1958-09-16

    A device is described for handling fuel elements of a neutronic reactor. The device consists of two concentric telescoped contalners that may fit about the fuel element. A number of ratchet members, equally spaced about the entrance to the containers, are pivoted on the inner container and spring biased to the outer container so thnt they are forced to hear against and hold the fuel element, the weight of which tends to force the ratchets tighter against the fuel element. The ratchets are released from their hold by raising the inner container relative to the outer memeber. This device reduces the radiation hazard to the personnel handling the fuel elements.

  8. Corneal seal device

    NASA Technical Reports Server (NTRS)

    Baehr, E. F. (Inventor)

    1977-01-01

    A corneal seal device is provided which, when placed in an incision in the eye, permits the insertion of a surgical tool or instrument through the device into the eye. The device includes a seal chamber which opens into a tube which is adapted to be sutured to the eye and serves as an entry passage for a tool. A sealable aperture in the chamber permits passage of the tool through the chamber into the tube and hence into the eye. The chamber includes inlet ports adapted to be connected to a regulated source of irrigation fluid which provides a safe intraocular pressure.

  9. Scalability of carbon-nanotube-based thin film transistors for flexible electronic devices manufactured using an all roll-to-roll gravure printing system

    PubMed Central

    Koo, Hyunmo; Lee, Wookyu; Choi, Younchang; Sun, Junfeng; Bak, Jina; Noh, Jinsoo; Subramanian, Vivek; Azuma, Yasuo; Majima, Yutaka; Cho, Gyoujin

    2015-01-01

    To demonstrate that roll-to-roll (R2R) gravure printing is a suitable advanced manufacturing method for flexible thin film transistor (TFT)-based electronic circuits, three different nanomaterial-based inks (silver nanoparticles, BaTiO3 nanoparticles and single-walled carbon nanotubes (SWNTs)) were selected and optimized to enable the realization of fully printed SWNT-based TFTs (SWNT-TFTs) on 150-m-long rolls of 0.25-m-wide poly(ethylene terephthalate) (PET). SWNT-TFTs with 5 different channel lengths, namely, 30, 80, 130, 180, and 230 μm, were fabricated using a printing speed of 8 m/min. These SWNT-TFTs were characterized, and the obtained electrical parameters were related to major mechanical factors such as web tension, registration accuracy, impression roll pressure and printing speed to determine whether these mechanical factors were the sources of the observed device-to-device variations. By utilizing the electrical parameters from the SWNT-TFTs, a Monte Carlo simulation for a 1-bit adder circuit, as a reference, was conducted to demonstrate that functional circuits with reasonable complexity can indeed be manufactured using R2R gravure printing. The simulation results suggest that circuits with complexity, similar to the full adder circuit, can be printed with a 76% circuit yield if threshold voltage (Vth) variations of less than 30% can be maintained. PMID:26411839

  10. Scalability of carbon-nanotube-based thin film transistors for flexible electronic devices manufactured using an all roll-to-roll gravure printing system

    NASA Astrophysics Data System (ADS)

    Koo, Hyunmo; Lee, Wookyu; Choi, Younchang; Sun, Junfeng; Bak, Jina; Noh, Jinsoo; Subramanian, Vivek; Azuma, Yasuo; Majima, Yutaka; Cho, Gyoujin

    2015-09-01

    To demonstrate that roll-to-roll (R2R) gravure printing is a suitable advanced manufacturing method for flexible thin film transistor (TFT)-based electronic circuits, three different nanomaterial-based inks (silver nanoparticles, BaTiO3 nanoparticles and single-walled carbon nanotubes (SWNTs)) were selected and optimized to enable the realization of fully printed SWNT-based TFTs (SWNT-TFTs) on 150-m-long rolls of 0.25-m-wide poly(ethylene terephthalate) (PET). SWNT-TFTs with 5 different channel lengths, namely, 30, 80, 130, 180, and 230 μm, were fabricated using a printing speed of 8 m/min. These SWNT-TFTs were characterized, and the obtained electrical parameters were related to major mechanical factors such as web tension, registration accuracy, impression roll pressure and printing speed to determine whether these mechanical factors were the sources of the observed device-to-device variations. By utilizing the electrical parameters from the SWNT-TFTs, a Monte Carlo simulation for a 1-bit adder circuit, as a reference, was conducted to demonstrate that functional circuits with reasonable complexity can indeed be manufactured using R2R gravure printing. The simulation results suggest that circuits with complexity, similar to the full adder circuit, can be printed with a 76% circuit yield if threshold voltage (Vth) variations of less than 30% can be maintained.

  11. Scalability of carbon-nanotube-based thin film transistors for flexible electronic devices manufactured using an all roll-to-roll gravure printing system.

    PubMed

    Koo, Hyunmo; Lee, Wookyu; Choi, Younchang; Sun, Junfeng; Bak, Jina; Noh, Jinsoo; Subramanian, Vivek; Azuma, Yasuo; Majima, Yutaka; Cho, Gyoujin

    2015-01-01

    To demonstrate that roll-to-roll (R2R) gravure printing is a suitable advanced manufacturing method for flexible thin film transistor (TFT)-based electronic circuits, three different nanomaterial-based inks (silver nanoparticles, BaTiO3 nanoparticles and single-walled carbon nanotubes (SWNTs)) were selected and optimized to enable the realization of fully printed SWNT-based TFTs (SWNT-TFTs) on 150-m-long rolls of 0.25-m-wide poly(ethylene terephthalate) (PET). SWNT-TFTs with 5 different channel lengths, namely, 30, 80, 130, 180, and 230 μm, were fabricated using a printing speed of 8 m/min. These SWNT-TFTs were characterized, and the obtained electrical parameters were related to major mechanical factors such as web tension, registration accuracy, impression roll pressure and printing speed to determine whether these mechanical factors were the sources of the observed device-to-device variations. By utilizing the electrical parameters from the SWNT-TFTs, a Monte Carlo simulation for a 1-bit adder circuit, as a reference, was conducted to demonstrate that functional circuits with reasonable complexity can indeed be manufactured using R2R gravure printing. The simulation results suggest that circuits with complexity, similar to the full adder circuit, can be printed with a 76% circuit yield if threshold voltage (Vth) variations of less than 30% can be maintained. PMID:26411839

  12. Geometry and Cloaking Devices

    NASA Astrophysics Data System (ADS)

    Ochiai, T.; Nacher, J. C.

    2011-09-01

    Recently, the application of geometry and conformal mappings to artificial materials (metamaterials) has attracted the attention in various research communities. These materials, characterized by a unique man-made structure, have unusual optical properties, which materials found in nature do not exhibit. By applying the geometry and conformal mappings theory to metamaterial science, it may be possible to realize so-called "Harry Potter cloaking device". Although such a device is still in the science fiction realm, several works have shown that by using such metamaterials it may be possible to control the direction of the electromagnetic field at will. We could then make an object hidden inside of a cloaking device. Here, we will explain how to design invisibility device using differential geometry and conformal mappings.

  13. Devices for Arrhythmia

    MedlinePlus

    ... the heart an electric shock (as with a defibrillator ). For people with recurrent arrhythmias, medical devices such as a pacemaker and implantable cardioverter defibrillator (ICD) can help by continuously monitoring the heart's ...

  14. Devices for hearing loss

    MedlinePlus

    ... bring the sound from your TV, radio, or music player directly to your inner ear. Many listening devices now work through a wireless link and can connect directly to your hearing aid. There is also television closed-captioning, which ...

  15. Optical devices: A compilation

    NASA Technical Reports Server (NTRS)

    1976-01-01

    Technological developments in the field of optics devices which have potential utility outside the aerospace community are described. Optical instrumentation, light generation and transmission, and laser techniques are among the topics covered. Patent information is given.

  16. Adhesion testing device

    NASA Technical Reports Server (NTRS)

    LaPeyronnie, Glenn M. (Inventor); Huff, Charles M. (Inventor)

    2010-01-01

    The present invention provides a testing apparatus and method for testing the adhesion of a coating to a surface. The invention also includes an improved testing button or dolly for use with the testing apparatus and a self aligning button hook or dolly interface on the testing apparatus. According to preferred forms, the apparatus and method of the present invention are simple, portable, battery operated rugged, and inexpensive to manufacture and use, are readily adaptable to a wide variety of uses, and provide effective and accurate testing results. The device includes a linear actuator driven by an electric motor coupled to the actuator through a gearbox and a rotatable shaft. The electronics for the device are contained in the head section of the device. At the contact end of the device, is positioned a self aligning button hook, attached below the load cell located on the actuator shaft.

  17. Anaerobic specimen transport device.

    PubMed Central

    Wilkins, T D; Jimenez-Ulate, F

    1975-01-01

    A device is described and evaluated for the anaerobic transport of clinical specimens. The device limits the amount of oxygen entering with the sample to a maximum of 2%, which is rapidly removed by reacting with hydrogen in the presence of a palladium catalyst. The viability on swabs of 12 species of anaerobes, four strains of facultative anaerobes and a strain of Pseudomonas aeruginosa, was maintained during the length of the tests (24 or 48 h). The results demonstrated that this device protected even the more oxygen-sensitive clinical anaerobes from death due to oxygen exposure. This device can be used for swabs as well as for anaerobic collection and liquid and solid specimens. Images PMID:1104656

  18. Supraglottic airway devices.

    PubMed

    Ramachandran, Satya Krishna; Kumar, Anjana M

    2014-06-01

    Supraglottic airway devices (SADs) are used to keep the upper airway open to provide unobstructed ventilation. Early (first-generation) SADs rapidly replaced endotracheal intubation and face masks in > 40% of general anesthesia cases due to their versatility and ease of use. Second-generation devices have further improved efficacy and utility by incorporating design changes. Individual second-generation SADs have allowed more dependable positive-pressure ventilation, are made of disposable materials, have integrated bite blocks, are better able to act as conduits for tracheal tube placement, and have reduced risk of pulmonary aspiration of gastric contents. SADs now provide successful rescue ventilation in > 90% of patients in whom mask ventilation or tracheal intubation is found to be impossible. However, some concerns with these devices remain, including failing to adequately ventilate, causing airway damage, and increasing the likelihood of pulmonary aspiration of gastric contents. Careful patient selection and excellent technical skills are necessary for successful use of these devices. PMID:24891199

  19. Device control at CEBAF

    SciTech Connect

    Schaffner, S.; Barker, D.; Bookwalter, V.

    1996-08-01

    CEBAF has undergone a major conversion of its accelerator control system from TACL to EPICS, affecting device control for the RF system, magnets, the machine protection system, the vacuum and valves, and the diagnostic systems including beam position monitors, harps, and the camera and solenoid devices (beam viewers, faraday cups, optical transition radiation viewers, synchrotron radiation monitor, etc.). Altogether these devices require approximately 125,000 EPICS database records. The majority of these devices are controlled through CAMAC; some use embedded microprocessors (RF and magnets), and newer interfaces are in VME. The standard EPICS toolkit was extended to include a driver for CAMAC which supports dual processors on one serial highway, custom database records for magnets and BPMs, and custom data acquisition tasks for the BPMs. 2 refs., 1 tab.

  20. Water-walking devices

    NASA Astrophysics Data System (ADS)

    Hu, David L.; Prakash, Manu; Chan, Brian; Bush, John W. M.

    2007-11-01

    We report recent efforts in the design and construction of water-walking machines inspired by insects and spiders. The fundamental physical constraints on the size, proportion and dynamics of natural water-walkers are enumerated and used as design criteria for analogous mechanical devices. We report devices capable of rowing along the surface, leaping off the surface and climbing menisci by deforming the free surface. The most critical design constraint is that the devices be lightweight and non-wetting. Microscale manufacturing techniques and new man-made materials such as hydrophobic coatings and thermally actuated wires are implemented. Using high-speed cinematography and flow visualization, we compare the functionality and dynamics of our devices with those of their natural counterparts.

  1. Water-walking devices

    NASA Astrophysics Data System (ADS)

    Hu, David L.; Prakash, Manu; Chan, Brian; Bush, John W. M.

    We report recent efforts in the design and construction of water-walking machines inspired by insects and spiders. The fundamental physical constraints on the size, proportion and dynamics of natural water-walkers are enumerated and used as design criteria for analogous mechanical devices. We report devices capable of rowing along the surface, leaping off the surface and climbing menisci by deforming the free surface. The most critical design constraint is that the devices be lightweight and non-wetting. Microscale manufacturing techniques and new man-made materials such as hydrophobic coatings and thermally actuated wires are implemented. Using highspeed cinematography and flow visualization, we compare the functionality and dynamics of our devices with those of their natural counterparts.

  2. High temperature measuring device

    DOEpatents

    Tokarz, Richard D.

    1983-01-01

    A temperature measuring device for very high design temperatures (to 2,000.degree. C.). The device comprises a homogenous base structure preferably in the form of a sphere or cylinder. The base structure contains a large number of individual walled cells. The base structure has a decreasing coefficient of elasticity within the temperature range being monitored. A predetermined quantity of inert gas is confined within each cell. The cells are dimensionally stable at the normal working temperature of the device. Increases in gaseous pressure within the cells will permanently deform the cell walls at temperatures within the high temperature range to be measured. Such deformation can be correlated to temperature by calibrating similarly constructed devices under known time and temperature conditions.

  3. Microreactor array device.

    PubMed

    Wiktor, Peter; Brunner, Al; Kahn, Peter; Qiu, Ji; Magee, Mitch; Bian, Xiaofang; Karthikeyan, Kailash; LaBaer, Joshua

    2015-01-01

    We report a device to fill an array of small chemical reaction chambers (microreactors) with reagent and then seal them using pressurized viscous liquid acting through a flexible membrane. The device enables multiple, independent chemical reactions involving free floating intermediate molecules without interference from neighboring reactions or external environments. The device is validated by protein expressed in situ directly from DNA in a microarray of ~10,000 spots with no diffusion during three hours incubation. Using the device to probe for an autoantibody cancer biomarker in blood serum sample gave five times higher signal to background ratio compared to standard protein microarray expressed on a flat microscope slide. Physical design principles to effectively fill the array of microreactors with reagent and experimental results of alternate methods for sealing the microreactors are presented. PMID:25736721

  4. Microreactor Array Device

    PubMed Central

    Wiktor, Peter; Brunner, Al; Kahn, Peter; Qiu, Ji; Magee, Mitch; Bian, Xiaofang; Karthikeyan, Kailash; LaBaer, Joshua

    2015-01-01

    We report a device to fill an array of small chemical reaction chambers (microreactors) with reagent and then seal them using pressurized viscous liquid acting through a flexible membrane. The device enables multiple, independent chemical reactions involving free floating intermediate molecules without interference from neighboring reactions or external environments. The device is validated by protein expressed in situ directly from DNA in a microarray of ~10,000 spots with no diffusion during three hours incubation. Using the device to probe for an autoantibody cancer biomarker in blood serum sample gave five times higher signal to background ratio compared to standard protein microarray expressed on a flat microscope slide. Physical design principles to effectively fill the array of microreactors with reagent and experimental results of alternate methods for sealing the microreactors are presented. PMID:25736721

  5. Development of electrochromic devices.

    PubMed

    Pawlicka, A

    2009-01-01

    Electrochromic devices (ECD) are systems of considerable commercial interest due to their controllable transmission, absorption and/or reflectance. For instance, these devices are mainly applied to glare attenuation in automobile rearview mirrors and also in some smart windows that can regulate the solar gains of buildings. Other possible applications of ECDs include solar cells, small- and large-area flat panel displays, and frozen food monitoring and document authentication also are of great interest. Over the past 20 years almost 1000 patents and 1500 papers in journals and proceedings have been published with the key words "electrochromic windows". Most of these documents report on materials for electrochromic devices and only some of them about complete electrochromic devices. This paper describes the first patents and some of the recent ones on ECDs, whose development is possible due to the advances in nanotechnology. PMID:19958283

  6. Advanced underwater lift device

    NASA Technical Reports Server (NTRS)

    Flanagan, David T.; Hopkins, Robert C.

    1993-01-01

    Flexible underwater lift devices ('lift bags') are used in underwater operations to provide buoyancy to submerged objects. Commercially available designs are heavy, bulky, and awkward to handle, and thus are limited in size and useful lifting capacity. An underwater lift device having less than 20 percent of the bulk and less than 10 percent of the weight of commercially available models was developed. The design features a dual membrane envelope, a nearly homogeneous envelope membrane stress distribution, and a minimum surface-to-volume ratio. A proof-of-concept model of 50 kg capacity was built and tested. Originally designed to provide buoyancy to mock-ups submerged in NASA's weightlessness simulators, the device may have application to water-landed spacecraft which must deploy flotation upon impact, and where launch weight and volume penalties are significant. The device may also be useful for the automated recovery of ocean floor probes or in marine salvage applications.

  7. Microreactor Array Device

    NASA Astrophysics Data System (ADS)

    Wiktor, Peter; Brunner, Al; Kahn, Peter; Qiu, Ji; Magee, Mitch; Bian, Xiaofang; Karthikeyan, Kailash; Labaer, Joshua

    2015-03-01

    We report a device to fill an array of small chemical reaction chambers (microreactors) with reagent and then seal them using pressurized viscous liquid acting through a flexible membrane. The device enables multiple, independent chemical reactions involving free floating intermediate molecules without interference from neighboring reactions or external environments. The device is validated by protein expressed in situ directly from DNA in a microarray of ~10,000 spots with no diffusion during three hours incubation. Using the device to probe for an autoantibody cancer biomarker in blood serum sample gave five times higher signal to background ratio compared to standard protein microarray expressed on a flat microscope slide. Physical design principles to effectively fill the array of microreactors with reagent and experimental results of alternate methods for sealing the microreactors are presented.

  8. Thermoelectric materials and devices

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor); Talcott, Noel A. (Inventor)

    2011-01-01

    New thermoelectric materials comprise highly [111]-oriented twinned group IV alloys on the basal plane of trigonal substrates, which exhibit a high thermoelectric figure of merit and good material performance, and devices made with these materials.

  9. Left ventricular restoration devices.

    PubMed

    Oliveira, Guilherme H; Al-Kindi, Sadeer G; Bezerra, Hiram G; Costa, Marco A

    2014-04-01

    Left ventricular (LV) remodeling results in continuous cardiac chamber enlargement and contractile dysfunction, perpetuating the syndrome of heart failure. With current exhaustion of the neurohormonal medical paradigm, surgical and device-based therapies have been increasingly investigated as a way to restore LV chamber architecture and function. Left ventricular restoration has been attempted with surgical procedures, such as partial left ventriculectomy, surgical ventricular restoration with or without revascularization, and devices, such as the Acorn CorCap, the Paracor HeartNet, and the Myocor Myosplint. Whereas all these techniques require surgical access, with or without cardiopulmonary bypass, a newer ventricular partitioning device (VPD) called Parachute, can be delivered percutaneously through the aortic valve. Designed to achieve LV restoration from within the ventricle, this VPD partitions the LV by isolating aneurysmal from normal myocardium thereby diminishing the functioning cavity. This review aims to critically appraise the above methods, with particular attention to device-based therapies. PMID:24574107

  10. [Implantable medical devices].

    PubMed

    Crickx, B; Arrault, X

    2008-01-01

    Medical devices have been individualized to include a category of implantable medical devices, "designed to be totally implanted in the human body or to replace an epithelial surface or a surface of the eye, through surgery, and remain in place after the intervention" (directive 93/42/CEE and decree of 20 April 206). Each implantable medical device has a common name and a commercial name for precise identification of the model (type/references). The users' service and the implanting physician should be clearly identified. There are a number of rules concerning health traceability to rapidly identify patients exposed to risks in which the implantable medical devices of a particular batch or series were used and to monitor the consequences. The traceability data should be preserved 10 years and the patient's medical file for 20 years. PMID:18442666

  11. Burst-Disk Device Simulates Effect Of Pyrotechnic Device

    NASA Technical Reports Server (NTRS)

    Rogers, James P.; Sexton, James H.

    1995-01-01

    Expendable disks substituted for costly pyrotechnic devices for testing actuators. Burst-disk device produces rush of pressurized gas similar to pyrotechnic device. Designed to reduce cost of testing pyrotechnically driven emergency actuators (parachute-deploying mechanisms in original application).

  12. The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Nguyen, Ngoc; McCall, Briana; Alston, Robert; Collis, Ward; Iyer, Shanthi

    2015-10-01

    With the growing need for large area display technology and the push for a faster and cheaper alternative to the current amorphous indium gallium zinc oxide (a-IGZO) as the active channel layer for pixel-driven thin film transistors (TFTs) display applications, gallium tin zinc oxide (GSZO) has shown to be a promising candidate due to the similar electronic configuration of Sn4+ and In3+. In this work TFTs of GSZO sputtered films with only a few atomic % of Ga and Sn have been fabricated. A systematic and detailed comparison has been made of the properties of the GSZO films annealed at two temperatures: 140 °C and 450 °C. The electrical and optical stabilities of the respective devices have been studied to gain more insight into the degradation mechanism and are correlated with the initial TFT performance prior to the application of stress. Post deposition annealing at 450 °C of the films in air was found to lead to a higher atomic concentration of Sn4+ in these films and a superior quality of the film, as attested by the higher film density and less surface and interface roughness in comparison to the lower annealed temperature device. These result in significantly reduced shallow and deep interface traps with improved performance of the device exhibiting VON of -3.5 V, ION/IOFF of 108, field-effect mobility (μFE) of 4.46 cm2 V-1s-1, and sub-threshold swing of 0.38 V dec-1. The device is stable under both electrical and optical bias for wavelengths of 550 nm and above. Thus, this work demonstrates GSZO-based TFTs as a promising viable option to the IGZO TFTs by further tailoring the film composition and relevant processing temperatures.

  13. Nanowire Thermoelectric Devices

    NASA Technical Reports Server (NTRS)

    Borshchevsky, Alexander; Fleurial, Jean-Pierre; Herman, Jennifer; Ryan, Margaret

    2005-01-01

    Nanowire thermoelectric devices, now under development, are intended to take miniaturization a step beyond the prior state of the art to exploit the potential advantages afforded by shrinking some device features to approximately molecular dimensions (of the order of 10 nm). The development of nanowire-based thermoelectric devices could lead to novel power-generating, cooling, and sensing devices that operate at relatively low currents and high voltages. Recent work on the theory of thermoelectric devices has led to the expectation that the performance of such a device could be enhanced if the diameter of the wires could be reduced to a point where quantum confinement effects increase charge-carrier mobility (thereby increasing the Seebeck coefficient) and reduce thermal conductivity. In addition, even in the absence of these effects, the large aspect ratios (length of the order of tens of microns diameter of the order of tens of nanometers) of nanowires would be conducive to the maintenance of large temperature differences at small heat fluxes. The predicted net effect of reducing diameters to the order of tens of nanometers would be to increase its efficiency by a factor of .3. Nanowires made of thermoelectric materials and devices that comprise arrays of such nanowires can be fabricated by electrochemical growth of the thermoelectric materials in templates that contain suitably dimensioned pores (10 to 100 nm in diameter and 1 to 100 microns long). The nanowires can then be contacted in bundles to form devices that look similar to conventional thermoelectric devices, except that a production version may contain nearly a billion elements (wires) per square centimeter, instead of fewer than a hundred as in a conventional bulk thermoelectric device or fewer than 100,000 as in a microdevice. It is not yet possible to form contacts with individual nanowires. Therefore, in fabricating a nanowire thermoelectric device, one forms contacts on nanowires in bundles of the

  14. REACTOR CONTROL DEVICE

    DOEpatents

    Kaufman, H.B.; Weiss, A.A.

    1959-08-18

    A shadow control device for controlling a nuclear reactor is described. The device comprises a series of hollow neutron-absorbing elements arranged in groups, each element having a cavity for substantially housing an adjoining element and a longitudinal member for commonly supporting the groups of elements. Longitudinal actuation of the longitudinal member distributes the elements along its entire length in which position maximum worth is achieved.

  15. Exhaust gas purification device

    SciTech Connect

    Fujiwara, H.; Hibi, T.; Sayo, S.; Sugiura, Y.; Ueda, K.

    1980-02-19

    The exhaust gas purification device includes an exhaust manifold , a purification cylinder connected with the exhaust manifold through a first honey-comb shaped catalyst, and a second honeycomb shaped catalyst positioned at the rear portion of the purification cylinder. Each catalyst is supported by steel wool rings including coarse and dense portions of steel wool. The purification device further includes a secondary air supplying arrangement.

  16. Biomaterials and Biomedical Devices

    NASA Astrophysics Data System (ADS)

    Hanker, Jacob S.; Giammara, Beverly L.

    1988-11-01

    This review discusses the factors important in the incorporation or integration of biomaterials and devices by tissue. Methods for surface modification and surface-sensitive techniques for analysis are cited. In vitro methods to evaluate the biocompatibility or efficacy of certain biomaterials and devices are presented. Present and future directions in neural prostheses, cardiovascular materials, blood or bone substitutes, controlled drug delivery, orthopedic prostheses, dental materials, artificial organs, plasma- and cytapheresis, and dialysis are discussed.

  17. Inverted organic photosensitive device

    SciTech Connect

    Forrest, Stephen R.; Tong, Xiaoran; Lee, Jun Yeob; Cho, Yong Joo

    2015-09-08

    There is disclosed a method for preparing the surface of a metal substrate. The present disclosure also relates to an organic photovoltaic device including a metal substrate made by such method. Also disclosed herein is an inverted photosensitive device including a stainless steel foil reflective electrode, an organic donor-acceptor heterojunction over the reflective electrode, and a transparent electrode over the donor-acceptor heterojunction.

  18. Atherectomy devices: technology update

    PubMed Central

    Akkus, Nuri I; Abdulbaki, Abdulrahman; Jimenez, Enrique; Tandon, Neeraj

    2015-01-01

    Atherectomy is a procedure which is performed to remove atherosclerotic plaque from diseased arteries. Atherosclerotic plaques are localized in either coronary or peripheral arterial vasculature and may have different characteristics depending on the texture of the plaque. Atherectomy has been used effectively in treatment of both coronary and peripheral arterial disease. Atherectomy devices are designed differently to either cut, shave, sand, or vaporize these plaques and have different indications. In this article, current atherectomy devices are reviewed. PMID:25565904

  19. Raney nickel catalytic device

    DOEpatents

    O'Hare, Stephen A.

    1978-01-01

    A catalytic device for use in a conventional coal gasification process which includes a tubular substrate having secured to its inside surface by expansion a catalytic material. The catalytic device is made by inserting a tubular catalytic element, such as a tubular element of a nickel-aluminum alloy, into a tubular substrate and heat-treating the resulting composite to cause the tubular catalytic element to irreversibly expand against the inside surface of the substrate.

  20. Wireless device monitoring systems and monitoring devices, and associated methods

    DOEpatents

    McCown, Steven H; Derr, Kurt W; Rohde, Kenneth W

    2014-05-27

    Wireless device monitoring systems and monitoring devices include a communications module for receiving wireless communications of a wireless device. Processing circuitry is coupled with the communications module and configured to process the wireless communications to determine whether the wireless device is authorized or unauthorized to be present at the monitored area based on identification information of the wireless device. Methods of monitoring for the presence and identity of wireless devices are also provided.

  1. Electronic security device

    DOEpatents

    Eschbach, Eugene A.; LeBlanc, Edward J.; Griffin, Jeffrey W.

    1992-01-01

    The present invention relates to a security device having a control box (12) containing an electronic system (50) and a communications loop (14) over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system (50) and a detection module (72) capable of registering changes in the voltage and phase of the signal transmitted over the loop.

  2. Electronic security device

    DOEpatents

    Eschbach, E.A.; LeBlanc, E.J.; Griffin, J.W.

    1992-03-17

    The present invention relates to a security device having a control box containing an electronic system and a communications loop over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system and a detection module capable of registering changes in the voltage and phase of the signal transmitted over the loop. 11 figs.

  3. Contamination control device

    DOEpatents

    Clark, Robert M.; Cronin, John C.

    1977-01-01

    A contamination control device for use in a gas-insulated transmission bus consisting of a cylindrical center conductor coaxially mounted within a grounded cylindrical enclosure. The contamination control device is electrically connected to the interior surface of the grounded outer shell and positioned along an axial line at the lowest vertical position thereon. The contamination control device comprises an elongated metallic member having a generally curved cross-section in a first plane perpendicular to the axis of the bus and having an arcuate cross-section in a second plane lying along the axis of the bus. Each opposed end of the metallic member and its opposing sides are tapered to form a pair of generally converging and downward sloping surfaces to trap randomly moving conductive particles in the relatively field-free region between the metallic member and the interior surface of the grounded outer shell. The device may have projecting legs to enable the device to be spot welded to the interior of the grounded housing. The control device provides a high capture probability and prevents subsequent release of the charged particles after the capture thereof.

  4. Radiographic quality control devices.

    PubMed

    2000-04-01

    In this study, we evaluate eight radiographic quality control (QC) devices, which noninvasively measure the output from a variety of diagnostic x-ray production systems. When used as part of a quality assurance (QA) program, radiographic QC devices help ensure that x-ray equipment is working within acceptable limits. This in turn helps ensure that high-quality images are achieved with appropriate radiation doses and that resources are used efficiently (for example, by minimizing the number of repeat exposures required). Our testing focused on the physical performance, ease of use, and service and maintenance characteristics that affect the use of these devices for periodic, routine measurements of x-ray system parameters. We found that all the evaluated models satisfactorily measure all the parameters normally needed for a QA program. However, we did identify a number of differences among the models--particularly in the range of exposure levels that can be effectively measured and the ease of use. Three models perform well for a variety of applications and are very easy to use; we rate them Preferred. Three additional models have minor limitations but otherwise perform well; we rate them Acceptable. We recommend against purchasing two models because, although each performs acceptably for most applications, neither model can measure low levels of radiation. This Evaluation covers devices designed to measure the output of x-ray tubes noninvasively. These devices, called radiographic quality control (QC) devices, or QC meters, are typically used by medical physicists, x-ray engineers, biomedical engineers, and suitably trained radiographic technologists to make QC measurements. We focus on the use of these devices as part of an overall quality assurance (QA) program. We have not evaluated their use for other applications, such as acceptance testing. To be included in this study, a device must be able to measure the exposure- and kVp-related characteristics of most x

  5. Cataphoric devices in spoken discourse.

    PubMed

    Gernsbacher, M A; Jescheniak, J D

    1995-08-01

    We propose that speakers mark key words with cataphoric devices. Cataphoric devices are counterparts to anaphoric devices: Just as anaphoric devices enable backward reference, cataphoric devices enable forward reference. And just as anaphoric devices mark concepts that have been mentioned before, cataphoric devices mark concepts that are likely to be mentioned again. We investigated two cataphoric devices: spoken stress and the indefinite this. Our experiments demonstrated three ways that concepts marked by cataphoric devices gain a privileged status in listeners' mental representations: Cataphoric devices enhance the activation of the concepts that they mark; cataphoric devices suppress the activation of previously mentioned concepts; and cataphoric devices protect the concepts that they mark from being suppressed by subsequently mentioned concepts. PMID:7641525

  6. Diamond Electronic Devices

    NASA Astrophysics Data System (ADS)

    Isberg, J.

    2010-11-01

    For high-power and high-voltage applications, silicon is by far the dominant semiconductor material. However, silicon has many limitations, e.g. a relatively low thermal conductivity, electric breakdown occurs at relatively low fields and the bandgap is 1.1 eV which effectively limits operation to temperatures below 175° C. Wide-bandgap materials, such as silicon carbide (SiC), gallium nitride (GaN) and diamond offer the potential to overcome both the temperature and power handling limitations of silicon. Diamond is the most extreme in this class of materials. By the fundamental material properties alone, diamond offers the largest benefits as a semiconductor material for power electronic applications. On the other hand, diamond has a problem with a large carrier activation energy of available dopants which necessitates specialised device concepts to allow room temperature (RT) operation. In addition, the role of common defects on the charge transport properties of diamond is poorly understood. Notwithstanding this, many proof-of-principle two-terminal and three-terminal devices have been made and tested. Two-terminal electronic diamond devices described in the literature include: p-n diodes, p-i-n diodes, various types of radiation detectors, Schottky diodes and photoconductive or electron beam triggered switches. Three terminal devices include e.g. MISFETs and JFETs. However, the development of diamond devices poses great challenges for the future. A particularly interesting way to overcome the doping problem, for which there has been some recent progress, is to make so-called delta doped (or pulse-doped) devices. Such devices utilise very thin (˜1 nm) doped layers in order to achieve high RT activation.

  7. Diamond Electronic Devices

    SciTech Connect

    Isberg, J.

    2010-11-01

    For high-power and high-voltage applications, silicon is by far the dominant semiconductor material. However, silicon has many limitations, e.g. a relatively low thermal conductivity, electric breakdown occurs at relatively low fields and the bandgap is 1.1 eV which effectively limits operation to temperatures below 175 deg.n C. Wide-bandgap materials, such as silicon carbide (SiC), gallium nitride (GaN) and diamond offer the potential to overcome both the temperature and power handling limitations of silicon. Diamond is the most extreme in this class of materials. By the fundamental material properties alone, diamond offers the largest benefits as a semiconductor material for power electronic applications. On the other hand, diamond has a problem with a large carrier activation energy of available dopants which necessitates specialised device concepts to allow room temperature (RT) operation. In addition, the role of common defects on the charge transport properties of diamond is poorly understood. Notwithstanding this, many proof-of-principle two-terminal and three-terminal devices have been made and tested. Two-terminal electronic diamond devices described in the literature include: p-n diodes, p-i-n diodes, various types of radiation detectors, Schottky diodes and photoconductive or electron beam triggered switches. Three terminal devices include e.g. MISFETs and JFETs. However, the development of diamond devices poses great challenges for the future. A particularly interesting way to overcome the doping problem, for which there has been some recent progress, is to make so-called delta doped (or pulse-doped) devices. Such devices utilise very thin ({approx}1 nm) doped layers in order to achieve high RT activation.

  8. Electrical apparatus lockout device

    DOEpatents

    Gonzales, Rick

    1999-01-01

    A simple lockout device for electrical equipment equipped with recessed power blades is described. The device comprises a face-plate (12) having a threaded member (14) attached thereto and apertures suitable for accommodating the power blades of a piece of electrical equipment, an elastomeric nose (16) abutting the face-plate having a hole for passage of the threaded member therethrough and power blade apertures in registration with those of the face-plate, a block (20) having a recess (34) in its forward face for receiving at least a portion of the hose, a hole therein for receiving the threaded member and an integral extension (26) extending from its rear face. A thumb screw (22) suitable for turning with the hands and having internal threads suitable for engaging the threaded member attached to the face-plate is inserted into a passage in the integral extension to engage the threaded member in such a fashion that when the device is inserted over the recessed power blades of a piece of electrical equipment and the thumb screw (22) tightened, the elastomeric nose (16) is compressed between the face-plate (12) and the block (20) forcing it to expand laterally thereby securing the device in the recess and precluding the accidental or intentional energization of the piece of equipment by attachment of a power cord to the recessed power blades. Means are provided in the interval extension and the thumb screw for the attachment of a locking device (46) which will satisfy OSHA standards.

  9. Spectral tailoring device

    DOEpatents

    Brager, H.R.; Schenter, R.E.; Carter, L.L.; Karnesky, R.A.

    1987-08-05

    A spectral tailoring device for altering the neutron energy spectra and flux of neutrons in a fast reactor thereby selectively to enhance or inhibit the transmutation rate of a target metrical to form a product isotope. Neutron moderators, neutron filters, neutron absorbers and neutron reflectors may be used as spectral tailoring devices. Depending on the intended use for the device, a member from each of these four classes of materials could be used singularly, or in combination, to provide a preferred neutron energy spectra and flux of the neutrons in the region of the target material. In one embodiment of the invention, an assembly is provided for enhancing the production of isotopes, such as cobalt 60 and gadolinium 153. In another embodiment of the invention, a spectral tailoring device is disposed adjacent a target material which comprises long lived or volatile fission products and the device is used to shift the neutron energy spectra and flux of neutrons in the region of the fission products to preferentially transmute them to produce a less volatile fission product inventory. 6 figs.

  10. Composition-ratio influence on resistive switching behavior of solution-processed InGaZnO-based thin-film.

    PubMed

    Hwang, Yeong-Hyeon; Hwang, Inchan; Cho, Won-Ju

    2014-11-01

    The influence of composition ratio on the bipolar resistive switching behavior of resistive switching memory devices based on amorphous indium-gallium-zinc-oxide (a-IGZO) using the spin-coating process was investigated. To study the stoichiometric effects of the a-IGZO films on device characteristics, four devices with In/Ga/Zn stoichiometries of 1:1:1, 3:1:1, 1:3:1, and 1:1:3 were fabricated and characterized. The 3:1:1 film showed an ohmic behavior and the 1:1:3 film showed a rectifying switching behavior. The current-voltage characteristics of the a-IGZO films with stoichiometries of 1:1:1 and 1:3:1, however, showed a bipolar resistive memory switching behavior. We found that the three-fold increase in the gallium content ratio reduces the reset voltage from -0.9 to - 0.4 V and enhances the current ratio of high to low resistive states from 0.7 x 10(1) to 3 x 10(1). Our results show that the increase in the Ga composition ratio in the a-IGZO-based ReRAM cells effectively improves the device performance and reliability by increasing the initial defect density in the a-IGZO films. PMID:25958499

  11. Laser device and method

    SciTech Connect

    Myers, J. D.

    1985-06-25

    A simplified, relatively inexpensive laser device, wherein the laser elements are fixed in a body exoskeleton of electrical insulating material having a low coefficient of thermal expansion. The preferred embodiment includes a shotgun type laser filter having parallel bores which receive the laser flashlamp and laser rod in fixed relation in a body chamber. The reflector surrounds the laser filter and retains the filter within the body chamber. In the preferred method of this invention, several controlled lasing pulses are generated with each illumination pulse of the flashlamp, substantially increasing the efficiency of the laser device. The number of pulses is generally controlled by increasing the voltage to the flashlamp. The rapid multiple lasing pulses generate an elongated plasma in a fluid medium, such as the vitreous fluid body of an eye which makes the laser device extemely efficient for treating glaucoma and other medical treatments.

  12. Electrochromic optical switching device

    DOEpatents

    Lampert, C.M.; Visco, S.J.

    1992-08-25

    An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source. 3 figs.

  13. Electrochromic optical switching device

    DOEpatents

    Lampert, Carl M.; Visco, Steven J.

    1992-01-01

    An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source.

  14. Nonaqueous electrical storage device

    SciTech Connect

    McEwen, A.B.; Evans, D.A.; Blakley, T.J.; Goldman, J.L.

    1999-10-26

    An electrochemical capacitor is disclosed that features two, separated, high surface area carbon cloth electrodes sandwiched between two current collectors fabricated of a conductive polymer having a flow temperature greater than 130 C, the perimeter of the electrochemical capacitor being sealed with a high temperature gasket to form a single cell device. The gasket material is a thermoplastic stable at temperatures greater than 100 C, preferably a polyester or a polyurethane, and having a reflow temperature above 130 C but below the softening temperature of the current collector material. The capacitor packaging has good mechanical integrity over a wide temperature range, contributes little to the device equivalent series resistance (ESR), and is stable at high potentials. In addition, the packaging is designed to be easily manufacturable by assembly line methods. The individual cells can be stacked in parallel or series configuration to reach the desired device voltage and capacitance.

  15. Percutaneous connector device

    NASA Technical Reports Server (NTRS)

    Parsons, W. E. (Inventor)

    1976-01-01

    A device is reported for facilitating the passage of electrical signals from an external source through the skin of a patient to internal portions of the body such as muscles and nerves. The connector device includes a bio-compatible shell having an enlarged disk shaped portion for being implanted below the skin of the patient. The shell has a first and second electrically conductive post carried therein upon which a plug can be readily connected and disconnected. A modified form of the invention utilizes a unipolar connector that is adapted to be plugged into a shell implanted below the skin of a patient. Both of the connector devices are designed to be separated when a predetermined force is applied. This prevents excessive force from being applied to the implanted bio-compatible shell.

  16. Silicon Carbide Electronic Devices

    NASA Technical Reports Server (NTRS)

    Neudeck, P. G.

    2001-01-01

    The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is briefly surveyed. SiC-based electronic devices and circuits are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot function. Projected performance benefits of SiC electronics are briefly illustrated for several applications. However, most of these operational benefits of SiC have yet to be realized in actual systems, primarily owing to the fact that the growth techniques of SiC crystals are relatively immature and device fabrication technologies are not yet sufficiently developed to the degree required for widespread, reliable commercial use. Key crystal growth and device fabrication issues that limit the performance and capability of high-temperature and/or high-power SiC electronics are identified. The electrical and material quality differences between emerging SiC and mature silicon electronics technology are highlighted.

  17. Regenerative combustion device

    DOEpatents

    West, Phillip B.

    2004-03-16

    A regenerative combustion device having a combustion zone, and chemicals contained within the combustion zone, such as water, having a first equilibrium state, and a second combustible state. Means for transforming the chemicals from the first equilibrium state to the second combustible state, such as electrodes, are disposed within the chemicals. An igniter, such as a spark plug or similar device, is disposed within the combustion zone for igniting combustion of the chemicals in the second combustible state. The combustion products are contained within the combustion zone, and the chemicals are selected such that the combustion products naturally chemically revert into the chemicals in the first equilibrium state following combustion. The combustion device may thus be repeatedly reused, requiring only a brief wait after each ignition to allow the regeneration of combustible gasses within the head space.

  18. Graphene field emission devices

    SciTech Connect

    Kumar, S. Raghavan, S.; Duesberg, G. S.; Pratap, R.

    2014-09-08

    Graphene field emission devices are fabricated using a scalable process. The field enhancement factors, determined from the Fowler-Nordheim plots, are within few hundreds and match the theoretical predictions. The devices show high emission current density of ∼10 nA μm{sup −1} at modest voltages of tens of volts. The emission is stable with time and repeatable over long term, whereas the noise in the emission current is comparable to that from individual carbon nanotubes emitting under similar conditions. We demonstrate a power law dependence of emission current on pressure which can be utilized for sensing. The excellent characteristics and relative ease of making the devices promise their great potential for sensing and electronic applications.

  19. Ion manipulation device

    DOEpatents

    Anderson, Gordon A; Smith, Richard D; Ibrahim, Yehia M; Baker, Erin M

    2014-09-16

    An ion manipulation method and device is disclosed. The device includes a pair of substantially parallel surfaces. An array of inner electrodes is contained within, and extends substantially along the length of, each parallel surface. The device includes a first outer array of electrodes and a second outer array of electrodes. Each outer array of electrodes is positioned on either side of the inner electrodes, and is contained within and extends substantially along the length of each parallel surface. A DC voltage is applied to the first and second outer array of electrodes. A RF voltage, with a superimposed electric field, is applied to the inner electrodes by applying the DC voltages to each electrode. Ions either move between the parallel surfaces within an ion confinement area or along paths in the direction of the electric field, or can be trapped in the ion confinement area.

  20. Pendulum detector testing device

    DOEpatents

    Gonsalves, J.M.

    1997-09-30

    A detector testing device is described which provides consistent, cost-effective, repeatable results. The testing device is primarily constructed of PVC plastic and other non-metallic materials. Sensitivity of a walk-through detector system can be checked by: (1) providing a standard test object simulating the mass, size and material content of a weapon or other contraband, (2) suspending the test object in successive positions, such as head, waist and ankle levels, simulating where the contraband might be concealed on a person walking through the detector system; and (3) swinging the suspended object through each of the positions, while operating the detector system and observing its response. The test object is retained in a holder in which the orientation of the test device or target can be readily changed, to properly complete the testing requirements. 5 figs.

  1. Pendulum detector testing device

    DOEpatents

    Gonsalves, John M.

    1997-01-01

    A detector testing device which provides consistent, cost-effective, repeatable results. The testing device is primarily constructed of PVC plastic and other non-metallic materials. Sensitivity of a walk-through detector system can be checked by: 1) providing a standard test object simulating the mass, size and material content of a weapon or other contraband, 2) suspending the test object in successive positions, such as head, waist and ankle levels, simulating where the contraband might be concealed on a person walking through the detector system; and 3) swinging the suspended object through each of the positions, while operating the detector system and observing its response. The test object is retained in a holder in which the orientation of the test device or target can be readily changed, to properly complete the testing requirements.

  2. Sterilisation of implantable devices.

    PubMed

    Matthews, I P; Gibson, C; Samuel, A H

    1994-01-01

    The pathogenesis and rates of infection associated with the use of a wide variety of implantable devices are described. The multi-factorial nature of post-operative periprosthetic infection is outlined and the role of sterilisation of devices is explained. The resistance of bacterial spores is highlighted as a problem and a full description is given of the processes of sterilisation by heat, steam, ethylene oxide, low temperature steam and formaldehyde, ionising radiation and liquid glutaraldehyde. Sterility assurance and validation are discussed in the context of biological indicators and physical/chemical indicators. Adverse effects upon the material composition of devices and problems of process control are listed. Finally, possible optimisations of the ethylene oxide process and their potential significance to the field of sterilisation of implants is explored. PMID:10172076

  3. Conformal gripping device

    NASA Technical Reports Server (NTRS)

    Vranish, John M. (Inventor)

    2009-01-01

    The present invention relates to a conformal gripping device. In an embodiment of the present invention a conformal gripper device may be disclosed comprising a frame that includes an array of movable pins. The device may also include a roller locking and unlocking system within the frame. The system may comprise a pair of locking rollers for each row of gripper pins to facilitate locking and unlocking the array of gripper pins on a column-by-column basis. The system may also include a striker element that may force the locking rollers to roll along an angled roll surface to facilitate unlocking of the array of pins on a column-by-column basis. The system may further include an electromagnetic actuator or solenoid and permanent magnets to facilitate movement of the striker element and the locking rollers.

  4. Evaporative Cooling Membrane Device

    NASA Technical Reports Server (NTRS)

    Lomax, Curtis (Inventor); Moskito, John (Inventor)

    1999-01-01

    An evaporative cooling membrane device is disclosed having a flat or pleated plate housing with an enclosed bottom and an exposed top that is covered with at least one sheet of hydrophobic porous material having a thin thickness so as to serve as a membrane. The hydrophobic porous material has pores with predetermined dimensions so as to resist any fluid in its liquid state from passing therethrough but to allow passage of the fluid in its vapor state, thereby, causing the evaporation of the fluid and the cooling of the remaining fluid. The fluid has a predetermined flow rate. The evaporative cooling membrane device has a channel which is sized in cooperation with the predetermined flow rate of the fluid so as to produce laminar flow therein. The evaporative cooling membrane device provides for the convenient control of the evaporation rates of the circulating fluid by adjusting the flow rates of the laminar flowing fluid.

  5. Nonaqueous Electrical Storage Device

    DOEpatents

    McEwen, Alan B.; Evans, David A.; Blakley, Thomas J.; Goldman, Jay L.

    1999-10-26

    An electrochemical capacitor is disclosed that features two, separated, high surface area carbon cloth electrodes sandwiched between two current collectors fabricated of a conductive polymer having a flow temperature greater than 130.degree. C., the perimeter of the electrochemical capacitor being sealed with a high temperature gasket to form a single cell device. The gasket material is a thermoplastic stable at temperatures greater than 100.degree. C., preferably a polyester or a polyurethane, and having a reflow temperature above 130.degree. C. but below the softening temperature of the current collector material. The capacitor packaging has good mechanical integrity over a wide temperature range, contributes little to the device equivalent series resistance (ESR), and is stable at high potentials. In addition, the packaging is designed to be easily manufacturable by assembly line methods. The individual cells can be stacked in parallel or series configuration to reach the desired device voltage and capacitance.

  6. Double face sealing device

    NASA Technical Reports Server (NTRS)

    Weddendorf, Bruce C. (Inventor)

    1991-01-01

    A double face sealing device for mounting between two surfaces to provide an airtight and fluid-tight seal between a closure member bearing one of the surfaces and a structure or housing bearing the other surface which extends around the opening or hatchway to be closed. The double face sealing device includes a plurality of sections or segments mounted to one of the surfaces, each having a main body portion, a pair of outwardly extending and diverging, cantilever, spring arms, and a pair of inwardly extending and diverging, cantilever, spring arms, an elastomeric cover on the distal, free, ends of the outwardly extending and diverging spring arms, and an elastomeric cover on the distal, free, ends of the inwardly extending and diverging spring arms. The double face sealing device has application or use in all environments requiring a seal, but is particularly useful to seal openings or hatchways between compartments of spacecraft or aircraft.

  7. Biochip scanner device

    DOEpatents

    Perov, Alexander; Belgovskiy, Alexander I.; Mirzabekov, Andrei D.

    2001-01-01

    A biochip scanner device used to detect and acquire fluorescence signal data from biological microchips or biochips and method of use are provided. The biochip scanner device includes a laser for emitting a laser beam. A modulator, such as an optical chopper modulates the laser beam. A scanning head receives the modulated laser beam and a scanning mechanics coupled to the scanning head moves the scanning head relative to the biochip. An optical fiber delivers the modulated laser beam to the scanning head. The scanning head collects the fluorescence light from the biochip, launches it into the same optical fiber, which delivers the fluorescence into a photodetector, such as a photodiode. The biochip scanner device is used in a row scanning method to scan selected rows of the biochip with the laser beam size matching the size of the immobilization site.

  8. ALS insertion devices

    SciTech Connect

    Hoyer, E.; Chin, J.; Halbach, K.; Hassenzahl, W.V.; Humphries, D.; Kincaid, B.; Lancaster, H.; Plate, D.

    1990-11-01

    The Advanced Light Source (ALS), the first US third generation synchrotron radiation source, is currently under construction at the Lawrence Berkeley Laboratory. The low-emittance, 1.5 GeV electron storage ring and the insertion devices are specifically designed to produce high brightness beams in the UV to soft X-Ray range. The planned initial complement of insertion devices includes four 4.6 m long undulators, with period lengths of 3.9 cm, 5.0 cm (2) and 8.0 cm, and a 2.9 m long wiggler of 16 cm period length. Undulator design is well advanced and fabrication has begun on the 5.0 cm and 8.0 cm period length undulators. This paper discusses ALS insertion device requirements; general design philosophy; and design of the magnetic structure, support structure/drive systems, control system and vacuum system. 18 refs., 9 figs., 5 tabs.

  9. Endoscopic Devices for Obesity.

    PubMed

    Sampath, Kartik; Dinani, Amreen M; Rothstein, Richard I

    2016-06-01

    The obesity epidemic, recognized by the World Health Organization in 1997, refers to the rising incidence of obesity worldwide. Lifestyle modification and pharmacotherapy are often ineffective long-term solutions; bariatric surgery remains the gold standard for long-term obesity weight loss. Despite the reported benefits, it has been estimated that only 1% of obese patients will undergo surgery. Endoscopic treatment for obesity represents a potential cost-effective, accessible, minimally invasive procedure that can function as a bridge or alternative intervention to bariatric surgery. We review the current endoscopic bariatric devices including space occupying devices, endoscopic gastroplasty, aspiration technology, post-bariatric surgery endoscopic revision, and obesity-related NOTES procedures. Given the diverse devices already FDA approved and in development, we discuss the future directions of endoscopic therapies for obesity. PMID:27115879

  10. Fragment capture device

    DOEpatents

    Payne, Lloyd R.; Cole, David L.

    2010-03-30

    A fragment capture device for use in explosive containment. The device comprises an assembly of at least two rows of bars positioned to eliminate line-of-sight trajectories between the generation point of fragments and a surrounding containment vessel or asset. The device comprises an array of at least two rows of bars, wherein each row is staggered with respect to the adjacent row, and wherein a lateral dimension of each bar and a relative position of each bar in combination provides blockage of a straight-line passage of a solid fragment through the adjacent rows of bars, wherein a generation point of the solid fragment is located within a cavity at least partially enclosed by the array of bars.

  11. REACTOR CONTROL DEVICE

    DOEpatents

    Graham, R.H.

    1962-09-01

    A wholly mechanical compact control device is designed for automatically rendering the core of a fission reactor subcritical in response to core temperatures in excess of the design operating temperature limit. The control device comprises an expansible bellows interposed between the base of a channel in a reactor core and the inner end of a fuel cylinder therein which is normally resiliently urged inwardly. The bellows contains a working fluid which undergoes a liquid to vapor phase change at a temperature substantially equal to the design temperature limit. Hence, the bellows abruptiy expands at this limiting temperature to force the fuel cylinder outward and render the core subcritical. The control device is particularly applicable to aircraft propulsion reactor service. (AEC)

  12. Nonimaging radiant energy device

    DOEpatents

    Winston, Roland; Ning, Xiaohui

    1993-01-01

    A nonimaging radiant energy device may include a hyperbolically shaped reflective element with a radiant energy inlet and a radiant energy outlet. A convex lens is provided at the radiant energy inlet and a concave lens is provided at the radiant energy outlet. Due to the provision of the lenses and the shape of the walls of the reflective element, the radiant energy incident at the radiant energy inlet within a predetermined angle of acceptance is emitted from the radiant energy outlet exclusively within an acute exit angle. In another embodiment, the radiant energy device may include two interconnected hyperbolically shaped reflective elements with a respective convex lens being provided at each aperture of the device.

  13. Nonimaging radiant energy device

    DOEpatents

    Winston, Roland; Ning, Xiaohui

    1996-01-01

    A nonimaging radiant energy device may include a hyperbolically shaped reflective element with a radiant energy inlet and a radiant energy outlet. A convex lens is provided at the radiant energy inlet and a concave lens is provided at the radiant energy outlet. Due to the provision of the lenses and the shape of the walls of the reflective element, the radiant energy incident at the radiant energy inlet within a predetermined angle of acceptance is emitted from the radiant energy outlet exclusively within an acute exit angle. In another embodiment, the radiant energy device may include two interconnected hyperbolically shaped reflective elements with a respective convex lens being provided at each aperture of the device.

  14. Compositional changes in the channel layer of an amorphous In-Ga-Zn-O thin film transistor after thermal annealing

    NASA Astrophysics Data System (ADS)

    Kang, Jiyeon; Lee, Su Jeong; Kim, Chul-Hong; Chae, Gee Sung; Jun, Myungchul; Hwang, Yong Kee; Lee, Woong; Myoung, Jae-Min

    2012-06-01

    In order to investigate the possible reason for the improved device performances of amorphous In-Ga-Zn-O (a-IGZO) thin film transistors after thermal annealing, changes in the elemental concentrations in the a-IGZO channel regions and related device performances due to thermal annealing were observed. It was found that thermal annealing introduces a substantial level of oxygen deficiencies in the channel layer accompanying significantly enhanced device performances. The improved device performances are attributed to the oxygen deficiency which is believed to be averaged over the entire structure to function as shallow donors increasing the carrier concentrations. Such a deduction was supported by the changes in the absorption spectra of the a-IGZO films with various thermal histories.

  15. Therapeutic Devices for Epilepsy

    PubMed Central

    Fisher, Robert S.

    2011-01-01

    Therapeutic devices provide new options for treating drug-resistant epilepsy. These devices act by a variety of mechanisms to modulate neuronal activity. Only vagus nerve stimulation, which continues to develop new technology, is approved for use in the United States. Deep brain stimulation (DBS) of anterior thalamus for partial epilepsy recently was approved in Europe and several other countries. Responsive neurostimulation, which delivers stimuli to one or two seizure foci in response to a detected seizure, recently completed a successful multicenter trial. Several other trials of brain stimulation are in planning or underway. Transcutaneous magnetic stimulation (TMS) may provide a noninvasive method to stimulate cortex. Controlled studies of TMS split on efficacy, and may depend on whether a seizure focus is near a possible region for stimulation. Seizure detection devices in the form of “shake” detectors via portable accelerometers can provide notification of an ongoing tonic-clonic seizure, or peace of mind in the absence of notification. Prediction of seizures from various aspects of EEG is in early stages. Prediction appears to be possible in a subpopulation of people with refractory seizures and a clinical trial of an implantable prediction device is underway. Cooling of neocortex or hippocampus reversibly can attenuate epileptiform EEG activity and seizures, but engineering problems remain in its implementation. Optogenetics is a new technique that can control excitability of specific populations of neurons with light. Inhibition of epileptiform activity has been demonstrated in hippocampal slices, but use in humans will require more work. In general, devices provide useful palliation for otherwise uncontrollable seizures, but with a different risk profile than with most drugs. Optimizing the place of devices in therapy for epilepsy will require further development and clinical experience. PMID:22367987

  16. Evolution of Growth Hormone Devices: Matching Devices with Patients.

    PubMed

    Raimer-Hall, Dawn; Shea, Heidi Chamberlain

    2015-01-01

    Self-injection of growth hormone (GH) by children with GH deficiency can be problematic. They may have difficulty manipulating injection devices or preparing medication, and injections can be painful and create anxiety. Adherence to daily GH injections optimizes treatment benefit. Studies indicate that injection pens or needle-free devices enable easy self-injection by children, minimize medication reconstitution and storage requirements, and reduce injection pain. Newer GH delivery devices potentially encourage improved patient adherence. Reviewing features of GH devices will help nurses decide which GH device best fits the needs and abilities of pediatric patients. We searched recent medical literature about GH device development, about device-associated patient preferences and treatment adherence, and comparisons among GH devices. We concluded that improved awareness of the strengths and limitations of GH devices will enable nurses to guide families in selecting and using GH devices, improving adherence and outcomes, and helping children reach full growth potential. PMID:26292454

  17. Contaminate Control Device

    NASA Technical Reports Server (NTRS)

    Howe, Robert H. (Inventor); Flynn, Kenneth P. (Inventor); Stapleton, Thomas J. (Inventor)

    2014-01-01

    A contaminate control device for filtering contaminates from a gas such as air is provided. The device includes a housing having a first inlet and a first outlet. An axial flow filter is fluidly coupled between the first inlet and the first outlet, the axial flow filter has a second inlet and a second outlet. A second filter disposed about the axial flow filter and is fluidly coupled between the first inlet and the first outlet, the second filter having a third inlet on an inner diameter and a third outlet disposed on an outer diameter. A flow restrictor is fluidly coupled between the second inlet and the first inlet.

  18. Portable emittance measurement device

    SciTech Connect

    Liakin, D.; Seleznev, D.; Orlov, A.; Kuibeda, R.; Kropachev, G.; Kulevoy, T.; Yakushin, P.

    2010-02-15

    In Institute for Theoretical and Experimental Physics (ITEP) the portable emittance measurements device is developed. It provides emittance measurements both with ''pepper-pot'' and ''two slits'' methods. Depending on the method of measurements, either slits or pepper-pot mask with scintillator are mounted on the two activators and are installed in two standard Balzer's cross chamber with CF-100 flanges. To match the angle resolution for measured beam, the length of the stainless steel pipe between two crosses changes is adjusted. The description of the device and results of emittance measurements at the ITEP ion source test bench are presented.

  19. Photovoltaic device and method

    SciTech Connect

    Nath, P.; Barnard, T.J.; Crea, D.

    1986-05-20

    A photovoltaic device is described comprising: an electrically conductive substrate layer; a semiconductor body deposited upon the substrate layer; a transparent conductive layer over at least a portion of the semiconductor body for facilitating collection of electrical current produced by the photovoltaic device; and a bus-grid structure, in contact with the conductive layer, the bus-grid structure comprising a current collecting portion comprising grid fingers and a current carrying portion comprising a busbar structure for carrying current collected by the current collecting portion, the entirety of the current carrying portion which overlies the semiconductor body being electrically insulated from the semiconductor body by a layer of solid material.

  20. Phononic crystal devices

    DOEpatents

    El-Kady, Ihab F.; Olsson, Roy H.

    2012-01-10

    Phononic crystals that have the ability to modify and control the thermal black body phonon distribution and the phonon component of heat transport in a solid. In particular, the thermal conductivity and heat capacity can be modified by altering the phonon density of states in a phononic crystal. The present invention is directed to phononic crystal devices and materials such as radio frequency (RF) tags powered from ambient heat, dielectrics with extremely low thermal conductivity, thermoelectric materials with a higher ratio of electrical-to-thermal conductivity, materials with phononically engineered heat capacity, phononic crystal waveguides that enable accelerated cooling, and a variety of low temperature application devices.

  1. Nanoelectromechanics of shuttle devices

    NASA Astrophysics Data System (ADS)

    Shekhter, R. I.; Gorelik, L. Y.; Krive, I. V.; Kiselev, M. N.; Parafilo, A. V.; Jonson, M.

    2013-04-01

    A single-electron tunneling (SET) device with a nanoscale central island that can move with respect to the bulk sourceand drain electrodes allows for a nanoelectromechanical (NEM) coupling between the electrical current through the device and the mechanical vibrations of the island. Although the electromechanical "shuttle" instability and the associated phenomenon of single-electron shuttling were predicted more than 15 years ago, both theoretical and experimental studies of NEM-SET structures are still carried out. New functionalities based on quantum coherence, Coulomb correlations and coherent electron-spin dynamics are still of particular interest. In this article we present a short review of recent activities in this area.

  2. Precision alignment device

    DOEpatents

    Jones, N.E.

    1988-03-10

    Apparatus for providing automatic alignment of beam devices having an associated structure for directing, collimating, focusing, reflecting, or otherwise modifying the main beam. A reference laser is attached to the structure enclosing the main beam producing apparatus and produces a reference beam substantially parallel to the main beam. Detector modules containing optical switching devices and optical detectors are positioned in the path of the reference beam and are effective to produce an electrical output indicative of the alignment of the main beam. This electrical output drives servomotor operated adjustment screws to adjust the position of elements of the structure associated with the main beam to maintain alignment of the main beam. 5 figs.

  3. Precision alignment device

    DOEpatents

    Jones, Nelson E.

    1990-01-01

    Apparatus for providing automatic alignment of beam devices having an associated structure for directing, collimating, focusing, reflecting, or otherwise modifying the main beam. A reference laser is attached to the structure enclosing the main beam producing apparatus and produces a reference beam substantially parallel to the main beam. Detector modules containing optical switching devices and optical detectors are positioned in the path of the reference beam and are effective to produce an electrical output indicative of the alignment of the main beam. This electrical output drives servomotor operated adjustment screws to adjust the position of elements of the structure associated with the main beam to maintain alignment of the main beam.

  4. Dielectrophoretic columnar focusing device

    DOEpatents

    James, Conrad D.; Galambos, Paul C.; Derzon, Mark S.

    2010-05-11

    A dielectrophoretic columnar focusing device uses interdigitated microelectrodes to provide a spatially non-uniform electric field in a fluid that generates a dipole within particles in the fluid. The electric field causes the particles to either be attracted to or repelled from regions where the electric field gradient is large, depending on whether the particles are more or less polarizable than the fluid. The particles can thereby be forced into well defined stable paths along the interdigitated microelectrodes. The device can be used for flow cytometry, particle control, and other process applications, including cell counting or other types of particle counting, and for separations in material control.

  5. ROTATING PLASMA DEVICE

    DOEpatents

    Boyer, K.; Hammel, J.E.; Longmire, C.L.; Nagle, D.E.; Ribe, F.L.; Tuck, J.L.

    1961-10-24

    ABS>A method and device are described for obtaining fusion reactions. The basic concept is that of using crossed electric and magnetic fields to induce a plasma rotation in which the ionized particles follow a circumferential drift orbit on wldch a cyclotron mode of motion is superimposed, the net result being a cycloidal motion about the axis of symmetry. The discharge tube has a radial electric field and a longitudinal magnetic field. Mirror machine geometry is utilized. The device avoids reliance on the pinch effect and its associated instability problems. (AEC)

  6. Biomedical materials and devices

    SciTech Connect

    Hanker, J. S. ); Giammara, B. L. )

    1989-01-01

    This conference reports on how biomedical materials and devices are undergoing important changes that require interdisciplinary approaches, innovation expertise, and access to sophisticated preparative and analytical equipment and methodologies. The interaction of materials scientists with biomedical, biotechnological, bioengineering and clinical scientists in the last decade has resulted in major advances in therapy. New therapeutic modalities and bioengineering methods and devices for the continuous removal of toxins or pathologic products present in arthritis, atherosclerosis and malignancy are presented. Novel monitoring and controlled drug delivery systems and discussions of materials such as blood or plasma substitutes, artificial organs, and bone graft substitutes are discussed.

  7. Microfluidic Cell Culture Device

    NASA Technical Reports Server (NTRS)

    Takayama, Shuichi (Inventor); Cabrera, Lourdes Marcella (Inventor); Heo, Yun Seok (Inventor); Smith, Gary Daniel (Inventor)

    2014-01-01

    Microfluidic devices for cell culturing and methods for using the same are disclosed. One device includes a substrate and membrane. The substrate includes a reservoir in fluid communication with a passage. A bio-compatible fluid may be added to the reservoir and passage. The reservoir is configured to receive and retain at least a portion of a cell mass. The membrane acts as a barrier to evaporation of the bio-compatible fluid from the passage. A cover fluid may be added to cover the bio-compatible fluid to prevent evaporation of the bio-compatible fluid.

  8. REMOTE CONTROLLED SWITCHING DEVICE

    DOEpatents

    Hobbs, J.C.

    1959-02-01

    An electrical switching device which can be remotely controlled and in which one or more switches may be accurately operated at predetermined times or with predetermined intervening time intervals is described. The switching device consists essentially of a deck, a post projecting from the deck at right angles thereto, cam means mounted for rotation around said posts and a switch connected to said deck and actuated by said cam means. Means is provided for rotating the cam means at a constant speed and the switching apparatus is enclosed in a sealed container with external adjusting means and electrical connection elements.

  9. Semiconductor structure and devices

    NASA Technical Reports Server (NTRS)

    Dinkel, Nancy A. (Inventor); Goldstein, Bernard (Inventor); Ettenberg, Michael (Inventor)

    1987-01-01

    Semiconductor devices such as lasers which include a substrate with a channel therein with a clad layer overlying the substrate and filling the channel exhibit irregularities such as terraces in the surface of the clad layer which are detrimental to device performance. These irregularities are substantially eliminated by forming the channel in a surface of a buffer layer greater than about 4 micrometers thick on the substrate and forming the clad layer over the buffer layer and the channel. CW lasers incorporating the principles of the invention exhibit the highest output power in a single spatial mode and maximum output power which have been observed to date.

  10. EXPERIMENTAL ANIMAL WATERING DEVICE

    DOEpatents

    Finkel, M.P.

    1964-04-01

    A device for watering experimental animals confined in a battery of individual plastic enclosures is described. It consists of a rectangular plastic enclosure having a plurality of fluid-tight compartments, each with a drinking hole near the bottom and a filling hole on the top. The enclosure is immersed in water until filled, its drinking holes sealed with a strip of tape, and it is then placed in the battery. The tape sealing prevents the flow of water from the device, but permits animals to drink by licking the drinking holes. (AEC)

  11. Asphaltene based photovoltaic devices

    DOEpatents

    Chianelli, Russell R.; Castillo, Karina; Gupta, Vipin; Qudah, Ali M.; Torres, Brenda; Abujnah, Rajib E.

    2016-03-22

    Photovoltaic devices and methods of making the same, are disclosed herein. The cell comprises a photovoltaic device that comprises a first electrically conductive layer comprising a photo-sensitized electrode; at least one photoelectrochemical layer comprising metal-oxide particles, an electrolyte solution comprising at least one asphaltene fraction, wherein the metal-oxide particles are optionally dispersed in a surfactant; and a second electrically conductive layer comprising a counter-electrode, wherein the second electrically conductive layer comprises one or more conductive elements comprising carbon, graphite, soot, carbon allotropes or any combinations thereof.

  12. Transparent, high-performance thin-film transistors with an InGaZnO/aligned-SnO2 -nanowire composite and their application in photodetectors.

    PubMed

    Liu, Xingqiang; Liu, Xi; Wang, Jingli; Liao, Chongnan; Xiao, Xiangheng; Guo, Shishang; Jiang, Changzhong; Fan, Zhiyong; Wang, Ti; Chen, Xiaoshuang; Lu, Wei; Hu, Weida; Liao, Lei

    2014-11-19

    A high mobility of 109.0 cm(2) V(-1) s(-1) is obtained by thin-film transistors (TFTs) comprising a composite made by aligning SnO2 nanowires (NWs) in amorphous InGaZnO (a-IGZO) thin films. This composite TFT reaches an on-current density of 61.4 μA μm(-1) with a 10 μm channel length. Its performance surpasses that of single-crystalline InGaZnO and is comparable with that of polycrystalline silicon. PMID:25236580

  13. Device Oriented Project Controller

    SciTech Connect

    Dalesio, Leo; Kraimer, Martin

    2013-11-20

    This proposal is directed at the issue of developing control systems for very large HEP projects. A de-facto standard in accelerator control is the Experimental Physics and Industrial Control System (EPICS), which has been applied successfully to many physics projects. EPICS is a channel based system that requires that each channel of each device be configured and controlled. In Phase I, the feasibility of a device oriented extension to the distributed channel database was demonstrated by prototyping a device aware version of an EPICS I/O controller that functions with the current version of the channel access communication protocol. Extensions have been made to the grammar to define the database. Only a multi-stage position controller with limit switches was developed in the demonstration, but the grammar should support a full range of functional record types. In phase II, a full set of record types will be developed to support all existing record types, a set of process control functions for closed loop control, and support for experimental beam line control. A tool to configure these records will be developed. A communication protocol will be developed or extensions will be made to Channel Access to support introspection of components of a device. Performance bench marks will be made on both communication protocol and the database. After these records and performance tests are under way, a second of the grammar will be undertaken.

  14. ANNULAR IMPACTOR SAMPLING DEVICE

    DOEpatents

    Tait, G.W.C.

    1959-03-31

    A high-rate air sampler capable of sampling alphaemitting particles as small as 0.5 microns is described. The device is a cylindrical shaped cup that fits in front of a suction tube and which has sticky grease coating along its base. Suction forces contaminated air against the periodically monitored particle absorbing grease.

  15. Color identification testing device

    NASA Technical Reports Server (NTRS)

    Brawner, E. L.; Martin, R.; Pate, W.

    1970-01-01

    Testing device, which determines ability of a technician to identify color-coded electric wires, is superior to standard color blindness tests. It tests speed of wire selection, detects partial color blindness, allows rapid testing, and may be administered by a color blind person.

  16. Programmable ubiquitous telerobotic devices

    NASA Astrophysics Data System (ADS)

    Doherty, Michael; Greene, Matthew; Keaton, David; Och, Christian; Seidl, Matthew L.; Waite, William; Zorn, Benjamin G.

    1997-12-01

    We are investigating a field of research that we call ubiquitous telepresence, which involves the design and implementation of low-cost robotic devices that can be programmed and operated from anywhere on the Internet. These devices, which we call ubots, can be used for academic purposes (e.g., a biologist could remote conduct a population survey), commercial purposes (e.g., a house could be shown remotely by a real-estate agent), and for recreation and education (e.g., someone could tour a museum remotely). We anticipate that such devices will become increasingly common due to recent changes in hardware and software technology. In particular, current hardware technology enables such devices to be constructed very cheaply (less than $500), and current software and network technology allows highly portable code to be written and downloaded across the Internet. In this paper, we present our prototype system architecture, and the ubot implementation we have constructed based on it. The hardware technology we use is the handy board, a 6811-based controller board with digital and analog inputs and outputs. Our software includes a network layer based on TCP/IP and software layers written in Java. Our software enables users across the Internet to program the behavior of the vehicle and to receive image feedback from a camera mounted on it.

  17. Mobile Library Filming Device.

    ERIC Educational Resources Information Center

    Martin, Claud E.

    This report contains details of the study and performance test of the Mobile Filming Library Device which consists of a camera and self contained power source. Because of the cost savings and service improvement characteristics, this technique involving the use of a microfilm intermediate in the preparation of copies of material filed in full size…

  18. Superlattice optical device

    DOEpatents

    Biefeld, R.M.; Fritz, I.J.; Gourley, P.L.; Osbourn, G.C.

    A semiconductor optical device which includes a superlattice having direct transitions between conduction band and valence band states with the same wave vector, the superlattice being formed from a plurality of alternating layers of two or more different materials, at least the material with the smallest bandgap being an indirect bandgap material.

  19. Nanoscale Optoelectronic Photosynthetic Devices

    NASA Astrophysics Data System (ADS)

    Greenbaum, Elias; Lee, Ida; Guillorn, Michael; Lee, James W.; Simpson, Michael L.

    2001-03-01

    This presentation provides an overview and recent progress in the Oak Ridge National Laboratory research program in molecular electronics and green plant photosynthesis. The photosynthetic reaction center is a nanoscale molecular diode and photovoltaic device. The key thrust of our research program is the construction of molecular electronic devices from these nanoscale structures. Progress in this multidisciplinary research program has been demonstrated by direct electrical contact of emergent electrons with the Photosystem I (PS I) reaction center by nanoparticle precipitation. Demonstration of stable diode properties of isolated reaction centers combined with the ability to orient PS I by self-assembly on a planar surface, makes this structure a good building block for 2-D and potentially 3-D devices. Metallization of isolated PS I does not alter their fundamental photophysical properties and they can be bonded to metal surfaces. We report here the first measurement of photovoltage from single PS I reaction centers. Working at the Cornell University National Nanofabrication Facility, we have constructed sets of dissimilar metal electrodes separated by distances as small as 6 nm. We plan to use these structures to make electrical contact to both ends of oriented PSI reaction centers and thereby realize biomolecular logic circuits. Potential applications of PSI reaction centers for optoelectronic applications as well as molecular logic device construction will be discussed.

  20. Implantable electrical device

    NASA Technical Reports Server (NTRS)

    Jhabvala, M. D. (Inventor)

    1982-01-01

    A fully implantable and self contained device is disclosed composed of a flexible electrode array for surrounding damaged nerves and a signal generator for driving the electrode array with periodic electrical impulses of nanoampere magnitude to induce regeneration of the damaged nerves.

  1. Discourse Devices in Telugu

    ERIC Educational Resources Information Center

    Rani, A. Usha

    2010-01-01

    The aim of this paper is to discuss some of the productive discourse devices and markers noted in 50 spoken narratives elicited from Telugu native speakers. Since most of them are college students and residents of Hyderabad, they are also exposed to English as well as Hindi-Urdu (Dakkhini). After presenting certain salient features of Telugu…

  2. Multiple gap photovoltaic device

    DOEpatents

    Dalal, Vikram L.

    1981-01-01

    A multiple gap photovoltaic device having a transparent electrical contact adjacent a first cell which in turn is adjacent a second cell on an opaque electrical contact, includes utilizing an amorphous semiconductor as the first cell and a crystalline semiconductor as the second cell.

  3. A continent ileostomy device.

    PubMed Central

    Pemberton, J H; van Heerden, J A; Beart, R W; Kelly, K A; Phillips, S F; Taylor, B M

    1983-01-01

    The feasibility of achieving fecal continence by mechanical occlusion of an end-ileostomy is explored. Accordingly, progressive stomal occlusion with an indwelling occluding device was evaluated in four healthy patients with Brooke ileostomies. Pre-occlusion clinical and physiologic tests were done, including fat balance, intestinal transit time, ileal motility and absorption, ileal compliance, ileal radiography, and ileoscopy. Progressive stomal occlusion was then employed until periods of occlusion of 5 to 8 hours were achieved after 10 to 16 weeks. Pre-occlusion tests were then repeated. Patients mastered use of the occluding device rapidly, and the device achieved reliable stomal continence in each patient. Whereas ileal capacity was small initially, intermittent occlusion resulted in a large, capacious ileal reservoir. Fasting ileal motility was increased slightly by stomal occlusion, although intestinal transit during feeding was not altered. Also, ileal absorption of glucose, electrolytes, vitamin B-12, and fat were not changed, and ileal mucosa at the site of occlusion remained intact endoscopically. The authors concluded that chronic intermittent occlusion of a Brooke ileostomy with an indwelling stomal device achieved enteric continence without impairing intestinal function. Images Fig. 1. Fig. 4. PMID:6847281

  4. Human performance measuring device

    NASA Technical Reports Server (NTRS)

    Michael, J.; Scow, J.

    1970-01-01

    Complex coordinator, consisting of operator control console, recorder, subject display panel, and limb controls, measures human performance by testing perceptual and motor skills. Device measures psychophysiological functions in drug and environmental studies, and is applicable to early detection of psychophysiological body changes.

  5. Superlattice optical device

    DOEpatents

    Biefeld, Robert M.; Fritz, Ian J.; Gourley, Paul L.; Osbourn, Gordon C.

    1986-01-01

    A semiconductor optical device which includes a superlattice having direct transitions between conduction band and valence band states with the same wave vector, the superlattice being formed from a plurality of alternating layers of two or more different materials, at least the material with the smallest bandgap being an indirect bandgap material.

  6. Cryogenic storage devices

    SciTech Connect

    Pelloux-gervais, P.

    1982-02-09

    The present invention relates to a device for the cryogenic storing of products. In a tank, canisters are suspended via rods, and these rods rest on the rim of the tank via retaining heads. The invention is applicable to the cryogenic storage of seeds, semen, vegetable substances, etc.

  7. Solid-State Devices.

    ERIC Educational Resources Information Center

    Sutliff, Ronald D.; And Others

    This self-study course is designed to familiarize Marine Corps enlisted personnel with the principles of solid-state devices and their functions. The course contains four study units. Each study unit begins with a general objective, which is a statement of what the student should learn from the unit. The study units are divided into numbered work…

  8. Flexible photovoltaic device

    SciTech Connect

    Berman, E.

    1989-03-28

    A photovoltaic device is described comprising a transparent substrate, a transparent conductive layer adjacent to the transparent substrate, a TFS layer adjacent to the transparent conductive layer, and a conductive layer adjacent to the TFS layer, the transparent substrate being a tetrafluoroethyleneperfluoroalkooxy resin in the form of a flexible film.

  9. Cascaded thermoacoustic devices

    DOEpatents

    Swift, Gregory W.; Backhaus, Scott N.; Gardner, David L.

    2003-12-09

    A thermoacoustic device is formed with a resonator system defining at least one region of high specific acoustic impedance in an acoustic wave within the resonator system. A plurality of thermoacoustic units are cascaded together within the region of high specific acoustic impedance, where at least one of the thermoacoustic units is a regenerator unit.

  10. Solar Innovator | Alta Devices

    SciTech Connect

    Mattos, Laila; Le, Minh

    2012-01-01

    Selected to participate in the Energy Department's SunShot Initiative, Alta Devices produces solar cells that convert sunlight into electricity at world record-breaking levels of efficiency. Through its innovative solar technology Alta is helping bring down the cost of solar. Learn more about the Energy Department's efforts to advance solar technology at energy.gov/solar .

  11. LOADING AND UNLOADING DEVICE

    DOEpatents

    Treshow, M.

    1960-08-16

    A device for loading and unloading fuel rods into and from a reactor tank through an access hole includes parallel links carrying a gripper. These links enable the gripper to go through the access hole and then to be moved laterally from the axis of the access hole to the various locations of the fuel rods in the reactor tank.

  12. Condensate removal device

    DOEpatents

    Maddox, James W.; Berger, David D.

    1984-01-01

    A condensate removal device is disclosed which incorporates a strainer in unit with an orifice. The strainer is cylindrical with its longitudinal axis transverse to that of the vapor conduit in which it is mounted. The orifice is positioned inside the strainer proximate the end which is remoter from the vapor conduit.

  13. Electron beam device

    DOEpatents

    Beckner, E.H.; Clauser, M.J.

    1975-08-12

    This patent pertains to an electron beam device in which a hollow target is symmetrically irradiated by a high energy, pulsed electron beam about its periphery and wherein the outer portion of the target has a thickness slightly greater than required to absorb the electron beam pulse energy. (auth)

  14. Road-Cleaning Device

    ERIC Educational Resources Information Center

    Roman, Harry T.

    2014-01-01

    Roadways are literally soaked with petrochemical byproducts, oils, gasoline, and other volatile substances that eventually run off into sewers and end up in rivers, waterways, and other undesirable places. Can the roads be cleaned of these wastes, with their proper disposal? Can vehicles, robots, or other devices be designed that could be driven…

  15. RADIO RANGING DEVICE

    DOEpatents

    Nieset, R.T.

    1961-05-16

    A radio ranging device is described. It utilizes a super regenerative detector-oscillator in which echoes of transmitted pulses are received in proper phase to reduce noise energy at a selected range and also at multiples of the selected range.

  16. RADIO RANGING DEVICE

    DOEpatents

    Bogle, R.W.

    1960-11-22

    A description is given of a super-regenerative oscillator ranging device provided with radiating and receiving means and being capable of indicating the occurrence of that distance between itself and a reflecting object which so phases the received echo of energy of a preceding emitted oscillation that the intervals between oscillations become uniform.

  17. Solar Innovator | Alta Devices

    ScienceCinema

    Mattos, Laila; Le, Minh

    2013-05-29

    Selected to participate in the Energy Department's SunShot Initiative, Alta Devices produces solar cells that convert sunlight into electricity at world record-breaking levels of efficiency. Through its innovative solar technology Alta is helping bring down the cost of solar. Learn more about the Energy Department's efforts to advance solar technology at energy.gov/solar .

  18. Device configuration-management system

    SciTech Connect

    Nowell, D.M.

    1981-01-01

    The Fusion Chamber System, a major component of the Magnetic Fusion Test Facility, contains several hundred devices which report status to the Supervisory Control and Diagnostic System for control and monitoring purposes. To manage the large number of diversity of devices represented, a device configuration management system was required and developed. Key components of this software tool include the MFTF Data Base; a configuration editor; and a tree structure defining the relationships between the subsystem devices. This paper will describe how the configuration system easily accomodates recognizing new devices, restructuring existing devices, and modifying device profile information.

  19. [Mechanical resuscitation assist devices].

    PubMed

    Fischer, M; Breil, M; Ihli, M; Messelken, M; Rauch, S; Schewe, J-C

    2014-03-01

    In Germany 100,000-160,000 people suffer from out-of-hospital cardiac arrest (OHCA) annually. The incidence of cardiopulmonary resuscitation (CPR) after OHCA varies between emergency ambulance services but is in the range of 30-90 CPR attempts per 100,000 inhabitants per year. Basic life support (BLS) involving chest compressions and ventilation is the key measure of resuscitation. Rapid initiation and quality of BLS are the most critical factors for CPR success. Even healthcare professionals are not always able to ensure the quality of CPR measures. Consequently in recent years mechanical resuscitation devices have been developed to optimize chest compression and the resulting circulation. In this article the mechanical resuscitation devices currently available in Germany are discussed and evaluated scientifically in context with available literature. The ANIMAX CPR device should not be used outside controlled trials as no clinical results have so far been published. The same applies to the new device Corpuls CPR which will be available on the market in early 2014. Based on the current published data a general recommendation for the routine use of LUCAS™ and AutoPulse® CPR cannot be given. The preliminary data of the CIRC trial and the published data of the LINC trial revealed that mechanical CPR is apparently equivalent to good manual CPR. For the final assessment further publications of large randomized studies must be analyzed (e.g. the CIRC and PaRAMeDIC trials). However, case control studies, case series and small studies have already shown that in special situations and in some cases patients will benefit from the automatic mechanical resuscitation devices (LUCAS™, AutoPulse®). This applies especially to emergency services where standard CPR quality is far below average and for patients who require prolonged CPR under difficult circumstances. This might be true in cases of resuscitation due to hypothermia, intoxication and pulmonary embolism as well as

  20. Medical Devices; Cardiovascular Devices; Classification of the Coronary Vascular Physiologic Simulation Software Device. Final order.

    PubMed

    2015-10-21

    The Food and Drug Administration (FDA) is classifying the coronary vascular physiologic simulation software device into class II (special controls). The special controls that will apply to the device are identified in this order and will be part of the codified language for the coronary vascular physiologic simulation software device's classification. The Agency is classifying the device into class II (special controls) in order to provide a reasonable assurance of safety and effectiveness of the device. PMID:26495515

  1. Light modulating device

    DOEpatents

    Rauh, R. David; Goldner, Ronald B.

    1989-01-01

    In a device for transmitting light, means for controlling the transmissivity of the device, including a ceramic, reversibly electrochromic, crystalline element having a highly reflective state when injected with electrons and charge compensating ions and a highly transmissive state when the electrons and ions are removed, the crystalline element being characterized as having a reflectivity of at least 50% in the reflective state and not greater than 10% in the transmissive state, and means for modulating the crystalline element between the reflective and transmissive states by injecting ions into the crystalline element in response to an applied electrical current of a first polarity and removing the ions in response to an applied electrical current of a second polarity.

  2. Light modulating device

    DOEpatents

    Rauh, R.D.; Goldner, R.B.

    1989-12-26

    In a device for transmitting light, means for controlling the transmissivity of the device, including a ceramic, reversibly electrochromic, crystalline element having a highly reflective state when injected with electrons and charge compensating ions and a highly transmissive state when the electrons and ions are removed, the crystalline element being characterized as having a reflectivity of at least 50% in the reflective state and not greater than 10% in the transmissive state, and means for modulating the crystalline element between the reflective and transmissive states by injecting ions into the crystalline element in response to an applied electrical current of a first polarity and removing the ions in response to an applied electrical current of a second polarity are disclosed. 1 fig.

  3. Wire brush fastening device

    SciTech Connect

    Meigs, R.A.

    1993-08-31

    A fastening device is provided which is a variation on the conventional nut and bolt. The bolt has a longitudinal axis and threading helically affixed thereon along the longitudinal axis. A nut having a bore extending therethrough is provided. The bore of the nut has a greater diameter than the diameter of the bolt so the bolt can extend through the bore. An array of wire bristles are affixed within the bore so as to form a brush. The wire bristles extend inwardly from the bore and are constructed and arranged of the correct size, length and stiffness to guide the bolt within the bore and to restrain the bolt within the bore as required. A variety of applications of the wire brush nut are disclosed, including a bolt capture device and a test rig apparatus.

  4. Urine collection device

    NASA Technical Reports Server (NTRS)

    Michaud, R. B. (Inventor)

    1981-01-01

    A urine collection device for females is described. It is comprised of a collection element defining a urine collection chamber and an inlet opening into the chamber and is adapted to be disposed in surrounding relation to the urethral opening of the user. A drainage conduit is connected to the collection element in communication with the chamber whereby the chamber and conduit together comprise a urine flow pathway for carrying urine generally away from the inlet. A first body of wicking material is mounted adjacent the collection element and extends at least partially into the flow pathway. The device preferably also comprise a vaginal insert element including a seal portion for preventing the entry of urine into the vagina.

  5. Elastomeric load sharing device

    NASA Technical Reports Server (NTRS)

    Isabelle, Charles J. (Inventor); Kish, Jules G. (Inventor); Stone, Robert A. (Inventor)

    1992-01-01

    An elastomeric load sharing device, interposed in combination between a driven gear and a central drive shaft to facilitate balanced torque distribution in split power transmission systems, includes a cylindrical elastomeric bearing and a plurality of elastomeric bearing pads. The elastomeric bearing and bearing pads comprise one or more layers, each layer including an elastomer having a metal backing strip secured thereto. The elastomeric bearing is configured to have a high radial stiffness and a low torsional stiffness and is operative to radially center the driven gear and to minimize torque transfer through the elastomeric bearing. The bearing pads are configured to have a low radial and torsional stiffness and a high axial stiffness and are operative to compressively transmit torque from the driven gear to the drive shaft. The elastomeric load sharing device has spring rates that compensate for mechanical deviations in the gear train assembly to provide balanced torque distribution between complementary load paths of split power transmission systems.

  6. GAS DISCHARGE DEVICES

    DOEpatents

    Jefferson, S.

    1958-11-11

    An apparatus utilized in introducing tritium gas into envelope of a gas discharge device for the purpose f maintaining the discharge path in ionized condition is described. ln addition to the cathode and anode, the ischarge device contains a zirconium or tantalum ilament arranged for external excitation and a metallic seed containing tritium, and also arranged to have a current passed through it. Initially, the zirconium or tantalum filament is vaporized to deposit its material adjacent the main discharge region. Then the tritium gas is released and, due to its affinity for the first released material, it deposits in the region of the main discharge where it is most effective in maintaining the discharge path in an ionized condition.

  7. Inertial energy storage device

    DOEpatents

    Knight, Jr., Charles E.; Kelly, James J.; Pollard, Roy E.

    1978-01-01

    The inertial energy storage device of the present invention comprises a composite ring formed of circumferentially wound resin-impregnated filament material, a flanged hollow metal hub concentrically disposed in the ring, and a plurality of discrete filament bandsets coupling the hub to the ring. Each bandset is formed of a pair of parallel bands affixed to the hub in a spaced apart relationship with the axis of rotation of the hub being disposed between the bands and with each band being in the configuration of a hoop extending about the ring along a chordal plane thereof. The bandsets are disposed in an angular relationship with one another so as to encircle the ring at spaced-apart circumferential locations while being disposed in an overlapping relationship on the flanges of the hub. The energy storage device of the present invention has the capability of substantial energy storage due to the relationship of the filament bands to the ring and the flanged hub.

  8. Support and maneuvering device

    DOEpatents

    Wood, R.L.

    1987-03-23

    A support and maneuvering device includes an elongated flexible inflatable enclosure having a fixed end and a movable end. The movable end is collapsible toward the fixed end to a contracted position when the enclosure is in a noninflated condition. Upon inflation, the movable end is movable away from the fixed end to an extended position. The movable end includes means for mounting an article such as a solar reflector thereon. The device also includes a plurality of position controlling means disposed about the movable end to effect adjusting movement of portions thereof by predetermined amounts and for controlling an angle at which the article disposed at the movable end is oriented. The plurality of position controlling means limits a suitable number degrees of freedom of the movable end for transmitting a steering motion thereto and for controlling the position thereof. 9 figs.

  9. PRESSURE SENSING DEVICE

    DOEpatents

    Pope, K.E.

    1959-12-15

    This device is primarily useful as a switch which is selectively operable to actuate in response to either absolute or differential predetermined pressures. The device generally comprises a pressure-tight housing divided by a movable impermeable diaphragm into two chambers, a reference pressure chamber and a bulb chamber containing the switching means and otherwise filled with an incompressible non-conducting fluid. The switch means comprises a normally collapsed bulb having an electrically conductive outer surface and a vent tube leading to the housing exterior. The normally collapsed bulb is disposed such that upon its inflation, respensive to air inflow from the vent, two contacts fixed within the bulb chamber are adapted to be electrically shorted by the conducting outer surface of the bulb.

  10. Support and maneuvering device

    DOEpatents

    Wood, Richard L.

    1988-01-01

    A support and maneuvering device includes an elongated flexible inflatable enclosure having a fixed end and a movable end. The movable end is collapsible toward the fixed end to a contracted position when the enclosure is in a noninflated condition. Upon inflation, the movable end is movable away from the fixed end to an extended position. The movable end includes means for mounting an article such as a solar reflector thereon. The device also includes a plurality of position controlling means disposed about the movable end to effect adjusting movement of portions thereof by predetermined amounts and for controlling an angle at which the article disposed at the movable end is oriented. The plurality of position controlling means limits a suitable number degrees of freedom of the movable end for transmitting a steering motion thereto and for controlling the position thereof.

  11. Picosecond optoelectronic devices

    SciTech Connect

    Lee, C.L.

    1984-01-01

    Ever since the invention of picosecond lasers, scientists and electronic engineers have been dreaming of inventing electronic devices that can record in real time the physical and electronic events that take place on picosecond time scales. With the exception of the expensive streak camera, this dream has been largely unfullfilled. Today, a real-time oscilloscope with picosecond time resolution is still not available. To fill the need for even better time resolution, researchers have turned to optical pulses and thus a hybrid technology has emerged-picosecond optoelectronics. This technology, based on bulk photoconductors, has had a slow start. However, because of the simplicity, scaleability, and jitterfree nature of the devices, the technology has recently experienced a rapid growth. This volume reviews the major developments in the field of picosecond optoelectronics over the past decade.

  12. Cable shield connecting device

    DOEpatents

    Silva, Frank A.

    1979-01-01

    A cable shield connecting device for installation on a high voltage cable of the type having a metallic shield, the device including a relatively conformable, looped metal bar for placement around a bared portion of the metallic shield to extend circumferentially around a major portion of the circumference of the metallic shield while being spaced radially therefrom, a plurality of relatively flexible metallic fingers affixed to the bar, projecting from the bar in an axial direction and spaced circumferentially along the bar, each finger being attached to the metallic shield at a portion located remote from the bar to make electrical contact with the metallic shield, and a connecting conductor integral with the bar.

  13. Preface: Heterostructure terahertz devices

    NASA Astrophysics Data System (ADS)

    Ryzhii, Victor

    2008-08-01

    The terahertz (THz) range of frequencies is borderline between microwave electronics and photonics. It corresponds to the frequency bands of molecular and lattice vibrations in gases, fluids, and solids. The importance of the THz range is in part due to numerous potential and emerging applications which include imaging and characterization, detection of hazardous substances, environmental monitoring, radio astronomy, covert inter-satellite communications, as well as biological and medical applications. During the last decades marked progress has been achieved in the development, fabrication, and practical implementation of THz devices and systems. This is primarily owing to the utilization of gaseous and free electron lasers and frequency converters using nonlinear optical phenomena as sources of THz radiation. However, such devices and hence the systems based on them are fairly cumbersome. This continuously stimulates an extensive search for new compact and efficient THz sources based on semiconductor heterostructures. Despite tremendous efforts lasting several decades, the so-called THz gap unbridged by semiconductor heterostructure electron and optoelectron devices still exists providing appropriate levels of power of the generated THz radiation. The invention and realization of quantum cascade lasers made of multiple quantum-well heterostructures already resulted in the partial solution of the problem in question, namely, in the successful coverage of the high-frequency portion of the THz gap (2-3 THz and higher). Further advancement to lower frequencies meets, perhaps, fundamental difficulties. All this necessitates further extensive theoretical and experimental studies of more or less traditional and novel semiconductor heterostructures as a basis for sources of THz radiation. This special issue includes 11 excellent original papers submitted by several research teams representing 14 institutions in Europe, America, and Asia. Several device concepts which

  14. Portable biochip scanner device

    DOEpatents

    Perov, Alexander; Sharonov, Alexei; Mirzabekov, Andrei D.

    2002-01-01

    A portable biochip scanner device used to detect and acquire fluorescence signal data from biological microchips (biochips) is provided. The portable biochip scanner device employs a laser for emitting an excitation beam. An optical fiber delivers the laser beam to a portable biochip scanner. A lens collimates the laser beam, the collimated laser beam is deflected by a dichroic mirror and focused by an objective lens onto a biochip. The fluorescence light from the biochip is collected and collimated by the objective lens. The fluorescence light is delivered to a photomultiplier tube (PMT) via an emission filter and a focusing lens. The focusing lens focuses the fluorescence light into a pinhole. A signal output of the PMT is processed and displayed.

  15. Organic photosensitive devices

    DOEpatents

    Peumans, Peter; Forrest, Stephen R.

    2013-01-22

    A photoactive device is provided. The device includes a first electrode, a second electrode, and a photoactive region disposed between and electrically connected to the first and second electrodes. The photoactive region further includes an organic donor layer and an organic acceptor layer that form a donor-acceptor heterojunction. The mobility of holes in the organic donor region and the mobility of electrons in the organic acceptor region are different by a factor of at least 100, and more preferably a factor of at least 1000. At least one of the mobility of holes in the organic donor region and the mobility of electrons in the organic acceptor region is greater than 0.001 cm.sup.2/V-sec, and more preferably greater than 1 cm.sup.2/V-sec. The heterojunction may be of various types, including a planar heterojunction, a bulk heterojunction, a mixed heterojunction, and a hybrid planar-mixed heterojunction.

  16. Integrated elastic microscope device

    NASA Astrophysics Data System (ADS)

    Lee, W. M.; Wright, D.; Watkins, R.; Cen, Zi

    2015-03-01

    The growing power of imaging and computing power of smartphones is creating the possibility of converting your smartphone into a high power pocket microscopy system. High quality miniature microscopy lenses attached to smartphone are typically made with glass or plastics that can only be produce at low cost with high volume. To revise the paradigm of microscope lenses, we devised a simple droplet lens fabrication technique that which produces low cost and high performance lens. Each lens is integrated into thin 3-D printed holder with complimentary light emitted diode (LEDs) that clips onto majority of smartphones. The integrated device converts a smartphone into a high power optical microscope/dermatoscope at around $2. This low cost device has wide application in a multitude of practical uses such as material inspection, dermascope and educational microscope.

  17. Microelectromechanical safe arm device

    DOEpatents

    Roesler, Alexander W.

    2012-06-05

    Microelectromechanical (MEM) apparatus and methods for operating, for preventing unintentional detonation of energetic components comprising pyrotechnic and explosive materials, such as air bag deployment systems, munitions and pyrotechnics. The MEM apparatus comprises an interrupting member that can be moved to block (interrupt) or complete (uninterrupt) an explosive train that is part of an energetic component. One or more latching members are provided that engage and prevent the movement of the interrupting member, until the one or more latching members are disengaged from the interrupting member. The MEM apparatus can be utilized as a safe and arm device (SAD) and electronic safe and arm device (ESAD) in preventing unintentional detonations. Methods for operating the MEM apparatus include independently applying drive signals to the actuators coupled to the latching members, and an actuator coupled to the interrupting member.

  18. Microelectromechanical reprogrammable logic device

    PubMed Central

    Hafiz, M. A. A.; Kosuru, L.; Younis, M. I.

    2016-01-01

    In modern computing, the Boolean logic operations are set by interconnect schemes between the transistors. As the miniaturization in the component level to enhance the computational power is rapidly approaching physical limits, alternative computing methods are vigorously pursued. One of the desired aspects in the future computing approaches is the provision for hardware reconfigurability at run time to allow enhanced functionality. Here we demonstrate a reprogrammable logic device based on the electrothermal frequency modulation scheme of a single microelectromechanical resonator, capable of performing all the fundamental 2-bit logic functions as well as n-bit logic operations. Logic functions are performed by actively tuning the linear resonance frequency of the resonator operated at room temperature and under modest vacuum conditions, reprogrammable by the a.c.-driving frequency. The device is fabricated using complementary metal oxide semiconductor compatible mass fabrication process, suitable for on-chip integration, and promises an alternative electromechanical computing scheme. PMID:27021295

  19. Dielectrokinetic chromatography devices

    DOEpatents

    Chirica, Gabriela S; Fiechtner, Gregory J; Singh, Anup K

    2014-12-16

    Disclosed herein are methods and devices for dielectrokinetic chromatography. As disclosed, the devices comprise microchannels having at least one perturber which produces a non-uniformity in a field spanning the width of the microchannel. The interaction of the field non-uniformity with a perturber produces a secondary flow which competes with a primary flow. By decreasing the size of the perturber the secondary flow becomes significant for particles/analytes in the nanometer-size range. Depending on the nature of a particle/analyte present in the fluid and its interaction with the primary flow and the secondary flow, the analyte may be retained or redirected. The composition of the primary flow can be varied to affect the magnitude of primary and/or secondary flows on the particles/analytes and thereby separate and concentrate it from other particles/analytes.

  20. Motion restraining device

    NASA Technical Reports Server (NTRS)

    Ford, A. G. (Inventor)

    1977-01-01

    A motion-restraining device for dissipating at a controlled rate the force of a moving body is discussed. The device is characterized by a drive shaft adapted to be driven in rotation by a moving body connected to a tape wound about a reel mounted on the drive shaft, and an elongated pitman link having one end pivotally connected to the crankshaft and the opposite end thereof connected with the mass through an energy dissipating linkage. A shuttle is disposed within a slot and guided by rectilinear motion between a pair of spaced impact surfaces. Reaction forces applied at impact of the shuttle with the impact surfaces include oppositely projected force components angularly related to the direction of the applied impact forces.

  1. Air filtering device

    SciTech Connect

    Backus, A.L.

    1992-07-28

    This patent describes a room air cleaning device. It comprises: a box housing having an air inlet and an air outlet provided therein; a vertical baffle coupled to the box housing opposite the air outlet and spaced form the box housing such that an air egress outlet is formed between the vertical baffle and the box housing; air cleansing means substantially disposed within the box housing and cleansing air passing into the inlet and out of the air egress outlet; a fan disposed within the box housing, the fan providing air movement through the air inlet and the air egress outlet; wherein air exits the room air cleaning device through the air egress outlet as a vertical plane of moving air; and wherein formation of the vertical plane of moving air contributes to the formation of a low pressure area drawing impure air toward the air inlet.

  2. Wire brush fastening device

    DOEpatents

    Meigs, Richard A.

    1995-01-01

    A fastening device is provided which is a variation on the conventional nut and bolt. The bolt has a longitudinal axis and threading helically affixed thereon along the longitudinal axis. A nut having a bore extending therethrough is provided. The bore of the nut has a greater diameter than the diameter of the bolt so the bolt can extend through the bore. An array of wire bristles are affixed within the bore so as to form a brush. The wire bristles extend inwardly from the bore and are constructed and arranged of the correct size, length and stiffness to guide the bolt within the bore and to restrain the bolt within the bore as required. A variety of applications of the wire brush nut are disclosed, including a bolt capture device and a test rig apparatus.

  3. Wire brush fastening device

    DOEpatents

    Meigs, R.A.

    1995-09-19

    A fastening device is provided which is a variation on the conventional nut and bolt. The bolt has a longitudinal axis and threading helically affixed thereon along the longitudinal axis. A nut having a bore extending therethrough is provided. The bore of the nut has a greater diameter than the diameter of the bolt so the bolt can extend through the bore. An array of wire bristles are affixed within the bore so as to form a brush. The wire bristles extend inwardly from the bore and are constructed and arranged of the correct size, length and stiffness to guide the bolt within the bore and to restrain the bolt within the bore as required. A variety of applications of the wire brush nut are disclosed, including a bolt capture device and a test rig apparatus. 13 figs.

  4. Particle capture device

    DOEpatents

    Jayne, John T.; Worsnop, Douglas R.

    2016-02-23

    In example embodiments, particle collection efficiency in aerosol analyzers and other particle measuring instruments is improved by a particle capture device that employs multiple collisions to decrease momentum of particles until the particles are collected (e.g., vaporized or come to rest). The particle collection device includes an aperture through which a focused particle beam enters. A collection enclosure is coupled to the aperture and has one or more internal surfaces against which particles of the focused beam collide. One or more features are employed in the collection enclosure to promote particles to collide multiple times within the enclosure, and thereby be vaporized or come to rest, rather than escape through the aperture.

  5. Regenerative braking device

    DOEpatents

    Hoppie, Lyle O.

    1982-01-12

    Disclosed are several embodiments of a regenerative braking device for an automotive vehicle. The device includes a plurality of rubber rollers (24, 26) mounted for rotation between an input shaft (14) connectable to the vehicle drivetrain and an output shaft (16) which is drivingly connected to the input shaft by a variable ratio transmission (20). When the transmission ratio is such that the input shaft rotates faster than the output shaft, the rubber rollers are torsionally stressed to accumulate energy, thereby slowing the vehicle. When the transmission ratio is such that the output shaft rotates faster than the input shaft, the rubber rollers are torsionally relaxed to deliver accumulated energy, thereby accelerating or driving the vehicle.

  6. Quick stop device

    DOEpatents

    Hipwell, Roger L.; Hazelton, Andrew J.

    1996-01-01

    A quick stop device for abruptly interrupting the cutting of a workpiece by a cutter is disclosed. The quick stop device employs an outer housing connected to an inner workpiece holder by at least one shear pin. The outer housing includes an appropriate shank designed to be received in the spindle of a machine, such as a machine tool. A cutter, such as a drill bit, is mounted in a stationary position and the workpiece, mounted to the workpiece holder, is rotated during engagement with the cutter. A trigger system includes at least one spring loaded punch disposed for movement into engagement with the workpiece holder to abruptly stop rotation of the workpiece holder. This action shears the shear pin and permits continued rotation of the spindle and outer housing without substantially disturbing the chip root formed during cutting.

  7. Nuclear reactor safety device

    DOEpatents

    Hutter, Ernest

    1986-01-01

    A safety device is disclosed for use in a nuclear reactor for axially repositioning a control rod with respect to the reactor core in the event of an upward thermal excursion. Such safety device comprises a laminated helical ribbon configured as a tube-like helical coil having contiguous helical turns with slidably abutting edges. The helical coil is disclosed as a portion of a drive member connected axially to the control rod. The laminated ribbon is formed of outer and inner laminae. The material of the outer lamina has a greater thermal coefficient of expansion than the material of the inner lamina. In the event of an upward thermal excursion, the laminated helical coil curls inwardly to a smaller diameter. Such inward curling causes the total length of the helical coil to increase by a substantial increment, so that the control rod is axially repositioned by a corresponding amount to reduce the power output of the reactor.

  8. [Bioabsorbable osteofixation devices].

    PubMed

    Iera, D; Haddad, A J; Sándor, G K B; Ashmmakhi, N

    2005-12-01

    There is continued interest in the development of new biomaterials. The application of new implantable biomaterials requires intense research and thorough evaluation. Much time and effort has been required to overcome the risks and problems associated with the bioabsorbable devices. For surgical bone fixation, these materials were investigated since the 1960's. Different polymer properties were explored to ensure adequate strength and biocompatibility. High-molecular-weight bioabsorbable polymers were initially used, followed by addition of reinforcement materials. The most recent materials are self-reinforced, small yet strong devices. The newer generations contain bioactive substances such as antibiotics and growth factors. Bioabsorbable materials are constantly changing as we try to adopt the principles of tissue engineering. Surgeons are using new techniques to exploit these polymers and their bioabsorbable properties. It is hoped that this multidisciplinary approach of surgery and research will continue to help the further evolution of biomaterial science. PMID:16181721

  9. Micro-Organ Devices

    NASA Technical Reports Server (NTRS)

    Gonda, Steven R.; Leslie, Julia; Chang, Robert C.; Starly, Binil; Sun, Wei; Culbertson, Christopher; Holtorf, Heidi

    2009-01-01

    Micro-organ devices (MODs) are being developed to satisfy an emerging need for small, lightweight, reproducible, biological-experimentati on apparatuses that are amenable to automated operation and that imp ose minimal demands for resources (principally, power and fluids). I n simplest terms, a MOD is a microfluidic device containing a variety of microstructures and assemblies of cells, all designed to mimic a complex in vivo microenvironment by replicating one or more in vivo micro-organ structures, the architectures and composition of the extr acellular matrices in the organs of interest, and the in vivo fluid flows. In addition to microscopic flow channels, a MOD contains one or more micro-organ wells containing cells residing in microscopic e xtracellular matrices and/or scaffolds, the shapes and compositions o f which enable replication of the corresponding in vivo cell assembl ies and flows.

  10. Microelectromechanical reprogrammable logic device.

    PubMed

    Hafiz, M A A; Kosuru, L; Younis, M I

    2016-01-01

    In modern computing, the Boolean logic operations are set by interconnect schemes between the transistors. As the miniaturization in the component level to enhance the computational power is rapidly approaching physical limits, alternative computing methods are vigorously pursued. One of the desired aspects in the future computing approaches is the provision for hardware reconfigurability at run time to allow enhanced functionality. Here we demonstrate a reprogrammable logic device based on the electrothermal frequency modulation scheme of a single microelectromechanical resonator, capable of performing all the fundamental 2-bit logic functions as well as n-bit logic operations. Logic functions are performed by actively tuning the linear resonance frequency of the resonator operated at room temperature and under modest vacuum conditions, reprogrammable by the a.c.-driving frequency. The device is fabricated using complementary metal oxide semiconductor compatible mass fabrication process, suitable for on-chip integration, and promises an alternative electromechanical computing scheme. PMID:27021295

  11. Microelectromechanical reprogrammable logic device

    NASA Astrophysics Data System (ADS)

    Hafiz, M. A. A.; Kosuru, L.; Younis, M. I.

    2016-03-01

    In modern computing, the Boolean logic operations are set by interconnect schemes between the transistors. As the miniaturization in the component level to enhance the computational power is rapidly approaching physical limits, alternative computing methods are vigorously pursued. One of the desired aspects in the future computing approaches is the provision for hardware reconfigurability at run time to allow enhanced functionality. Here we demonstrate a reprogrammable logic device based on the electrothermal frequency modulation scheme of a single microelectromechanical resonator, capable of performing all the fundamental 2-bit logic functions as well as n-bit logic operations. Logic functions are performed by actively tuning the linear resonance frequency of the resonator operated at room temperature and under modest vacuum conditions, reprogrammable by the a.c.-driving frequency. The device is fabricated using complementary metal oxide semiconductor compatible mass fabrication process, suitable for on-chip integration, and promises an alternative electromechanical computing scheme.

  12. Anti-gravity device

    NASA Technical Reports Server (NTRS)

    Palsingh, S. (Inventor)

    1975-01-01

    An educational toy useful in demonstrating fundamental concepts regarding the laws of gravity is described. The device comprises a sphere 10 of radius r resting on top of sphere 12 of radius R. The center of gravity of sphere 10 is displaced from its geometrical center by distance D. The dimensions are so related that D((R+r)/r) is greater than r. With the center of gravity of sphere 10 lying on a vertical line, the device is in equilibrium. When sphere 10 is rolled on the surface of sphere 12 it will return to its equilibrium position upon release. This creates an illusion that sphere 10 is defying the laws of gravity. In reality, due to the above noted relationship of D, R, and r, the center of gravity of sphere 10 rises from its equilibrium position as it rolls a short distance up or down the surface of sphere 12.

  13. Deflectometry using portable devices

    NASA Astrophysics Data System (ADS)

    Butel, Guillaume P.; Smith, Greg A.; Burge, James H.

    2015-02-01

    Deflectometry is a powerful metrology technique that uses off-the-shelf equipment to achieve nanometer-level accuracy surface measurements. However, there is no portable device to quickly measure eyeglasses, lenses, or mirrors. We present an entirely portable new deflectometry technique that runs on any Android™ smartphone with a front-facing camera. Our technique overcomes some specific issues of portable devices like screen nonlinearity and automatic gain control. We demonstrate our application by measuring an amateur telescope mirror and simulating a measurement of the faulty Hubble Space Telescope primary mirror. Our technique can, in less than 1 min, measure surface errors with accuracy up to 50 nm RMS, simply using a smartphone.

  14. Mechanical devices: A compilation

    NASA Technical Reports Server (NTRS)

    1976-01-01

    A collection of new technology items that should be of interest to mechanical engineers, machinists, and others who design or work with mechanical devices was described. Section 1 contains articles on several new or modified tools, Section 2 describes a number of specialized mechanical systems, and the last section is devoted to valves, bearings, and other parts that might be used with larger systems. The last patent information available is also given.

  15. Fiber optic monitoring device

    DOEpatents

    Samborsky, James K.

    1993-01-01

    A device for the purpose of monitoring light transmissions in optical fibers comprises a fiber optic tap that optically diverts a fraction of a transmitted optical signal without disrupting the integrity of the signal. The diverted signal is carried, preferably by the fiber optic tap, to a lens or lens system that disperses the light over a solid angle that facilitates viewing. The dispersed light indicates whether or not the monitored optical fiber or system of optical fibers is currently transmitting optical information.

  16. Alignment reference device

    DOEpatents

    Patton, Gail Y.; Torgerson, Darrel D.

    1987-01-01

    An alignment reference device provides a collimated laser beam that minimizes angular deviations therein. A laser beam source outputs the beam into a single mode optical fiber. The output end of the optical fiber acts as a source of radiant energy and is positioned at the focal point of a lens system where the focal point is positioned within the lens. The output beam reflects off a mirror back to the lens that produces a collimated beam.

  17. Hybrid electroluminescent devices

    DOEpatents

    Shiang, Joseph John; Duggal, Anil Raj; Michael, Joseph Darryl

    2010-08-03

    A hybrid electroluminescent (EL) device comprises at least one inorganic diode element and at least one organic EL element that are electrically connected in series. The absolute value of the breakdown voltage of the inorganic diode element is greater than the absolute value of the maximum reverse bias voltage across the series. The inorganic diode element can be a power diode, a Schottky barrier diode, or a light-emitting diode.

  18. Pediatric ventricular assist devices.

    PubMed

    Adachi, Iki; Burki, Sarah; Zafar, Farhan; Morales, David Luis Simon

    2015-12-01

    The domain of pediatric ventricular assist device (VAD) has recently gained considerable attention. Despite the fact that, historically, the practice of pediatric mechanical circulatory support (MCS) has lagged behind that of adult patients, this gap between the two groups is narrowing. Currently, the Berlin EXCOR VAD is the only pediatric-specific durable VAD approved by the U.S Food and Drug Administration (FDA). The prospective Berlin Heart trial demonstrated a successful outcome, either bridge to transplantation (BTT), or in rare instances, bridge to recovery, in approximately 90% of children. Also noted during the trial was, however, a high incidence of adverse events such as embolic stroke, bleeding and infection. This has incentivized some pediatric centers to utilize adult implantable continuous-flow devices, for instance the HeartMate II and HeartWare HVAD, in children. As a result of this paradigm shift, the outlook of pediatric VAD support has dramatically changed: Treatment options previously unavailable to children, including outpatient management and even destination therapy, have now been becoming a reality. The sustained demand for continued device miniaturization and technological refinements is anticipated to extend the range of options available to children-HeartMate 3 and HeartWare MVAD are two examples of next generation VADs with potential pediatric application, both of which are presently undergoing clinical trials. A pediatric-specific continuous-flow device is also on the horizon: the redesigned Infant Jarvik VAD (Jarvik 2015) is undergoing pre-clinical testing, with a randomized clinical trial anticipated to follow thereafter. The era of pediatric VADs has begun. In this article, we discuss several important aspects of contemporary VAD therapy, with a particular focus on challenges unique to the pediatric population. PMID:26793341

  19. Biomolecular detection device

    SciTech Connect

    Huo, Qisheng; Liu, Jun

    2008-10-21

    A device for detecting and measuring the concentration of biomolecules in solution, utilizing a conducting electrode in contact with a solution containing target biomolecules, with a film with controllable pore size distribution characteristics applied to at least one surface of the conducting electrode. The film is functionalized with probe molecules that chemically interact with the target biomolecules at the film surface, blocking indicator molecules present in solution from diffusing from the solution to the electrode, thereby changing the electrochemical response of the electrode.

  20. Liquid level sensing device

    DOEpatents

    Tokarz, Richard D.

    1983-01-01

    A liquid level sensing device comprising a load cell supporting a column or stack of segments freely resting on one another. The density of each element is substantially identical to that of the surrounding liquid. The elements are freely guided within a surrounding tube. As each element is exposed above the liquid level, its weight will be impressed through the column to the load cell, thereby providing a signal at the load cell directly proportional to the liquid level elevation.

  1. Pediatric ventricular assist devices

    PubMed Central

    Burki, Sarah; Zafar, Farhan; Morales, David Luis Simon

    2015-01-01

    The domain of pediatric ventricular assist device (VAD) has recently gained considerable attention. Despite the fact that, historically, the practice of pediatric mechanical circulatory support (MCS) has lagged behind that of adult patients, this gap between the two groups is narrowing. Currently, the Berlin EXCOR VAD is the only pediatric-specific durable VAD approved by the U.S Food and Drug Administration (FDA). The prospective Berlin Heart trial demonstrated a successful outcome, either bridge to transplantation (BTT), or in rare instances, bridge to recovery, in approximately 90% of children. Also noted during the trial was, however, a high incidence of adverse events such as embolic stroke, bleeding and infection. This has incentivized some pediatric centers to utilize adult implantable continuous-flow devices, for instance the HeartMate II and HeartWare HVAD, in children. As a result of this paradigm shift, the outlook of pediatric VAD support has dramatically changed: Treatment options previously unavailable to children, including outpatient management and even destination therapy, have now been becoming a reality. The sustained demand for continued device miniaturization and technological refinements is anticipated to extend the range of options available to children—HeartMate 3 and HeartWare MVAD are two examples of next generation VADs with potential pediatric application, both of which are presently undergoing clinical trials. A pediatric-specific continuous-flow device is also on the horizon: the redesigned Infant Jarvik VAD (Jarvik 2015) is undergoing pre-clinical testing, with a randomized clinical trial anticipated to follow thereafter. The era of pediatric VADs has begun. In this article, we discuss several important aspects of contemporary VAD therapy, with a particular focus on challenges unique to the pediatric population. PMID:26793341

  2. Thermal Remote Anemometer Device

    NASA Technical Reports Server (NTRS)

    Heyman, Joseph S.; Heath, D. Michele; Winfree, William P.; Miller, William E.; Welch, Christopher S.

    1988-01-01

    Thermal Remote Anemometer Device developed for remote, noncontacting, passive measurement of thermal properties of sample. Model heated locally by scanning laser beam and cooled by wind in tunnel. Thermal image of model analyzed to deduce pattern of airflow around model. For materials applications, system used for evaluation of thin films and determination of thermal diffusivity and adhesive-layer contact. For medical applications, measures perfusion through skin to characterize blood flow and used to determine viabilities of grafts and to characterize tissues.

  3. Photoelectric MIS devices

    NASA Astrophysics Data System (ADS)

    Zuev, V. A.; Popov, V. G.

    The physical principles underlying the operation of MIS photoreceivers are examined, and the main characteristics of MIS structures are briefly discussed. Various types of MIS phototransducers are then discussed in detail. These include photoresistors, photodiodes, photovaractors, and phototransistors. Attention is also given to phototransducers and photoreceivers based on metal-silicon nitride-silicon oxide-semiconductor structures and related systems used for data recording. The prospects for the use of MIS devices in optoelectronic and photovoltaic applications are outlined.

  4. Residual gas analysis device

    DOEpatents

    Thornberg, Steven M.

    2012-07-31

    A system is provided for testing the hermeticity of a package, such as a microelectromechanical systems package containing a sealed gas volume, with a sampling device that has the capability to isolate the package and breach the gas seal connected to a pulse valve that can controllably transmit small volumes down to 2 nanoliters to a gas chamber for analysis using gas chromatography/mass spectroscopy diagnostics.

  5. Temperature measuring device

    DOEpatents

    Lauf, Robert J.; Bible, Don W.; Sohns, Carl W.

    1999-01-01

    Systems and methods are described for a wireless instrumented silicon wafer that can measure temperatures at various points and transmit those temperature readings to an external receiver. The device has particular utility in the processing of semiconductor wafers, where it can be used to map thermal uniformity on hot plates, cold plates, spin bowl chucks, etc. without the inconvenience of wires or the inevitable thermal perturbations attendant with them.

  6. Influence of TFT-LCD Pixels Structure on Holographic Encoding

    NASA Astrophysics Data System (ADS)

    Hongjun, Wang; Ailing, Tian; Bingcai, Liu; Chunhui, Wang

    The LCD is proposed as a new hologram loader with the advantage that the hologram image is controlled digitally with no any mechanical moving and rotating elements. Different hologram image can be readily introduced by changing the coded image displayed on the LCD. A basic problem in which LCD is a hologram image loader is limited LCD's pixel number. In CGH, the sample point number have great impact on holographic representation. So the choice of sample point number is very important. When the LCD is phase hologram image loader, the phase on hologram image was decided by phase distribution of recorded wavefront on LCD plane. In phase hologram encoding, the pixel spacing is sampling interval of recorded wavefront. Based on sampling theory, the frequency band can be obtained by spectrum analysis. For different wavefront shape, A model was developed for phase rate, the spectrum distribution was got, the phase rate which can be recorded by LCD can be got. A didactic example is included to illustrate the computational procedure.

  7. Optical Indoor Positioning System Based on TFT Technology

    PubMed Central

    Gőzse, István

    2015-01-01

    A novel indoor positioning system is presented in the paper. Similarly to the camera-based solutions, it is based on visual detection, but it conceptually differs from the classical approaches. First, the objects are marked by LEDs, and second, a special sensing unit is applied, instead of a camera, to track the motion of the markers. This sensing unit realizes a modified pinhole camera model, where the light-sensing area is fixed and consists of a small number of sensing elements (photodiodes), and it is the hole that can be moved. The markers are tracked by controlling the motion of the hole, such that the light of the LEDs always hits the photodiodes. The proposed concept has several advantages: Apart from its low computational demands, it is insensitive to the disturbing ambient light. Moreover, as every component of the system can be realized by simple and inexpensive elements, the overall cost of the system can be kept low. PMID:26712753

  8. Devices in Heart Failure

    PubMed Central

    Munir, Shahzeb M.; Bogaev, Roberta C.; Sobash, Ed; Shankar, K. J.; Gondi, Sreedevi; Stupin, Igor V.; Robertson, Jillian; Brewer, M. Alan; Casscells, S. Ward; Delgado, Reynolds M.; Ahmed, Amany

    2008-01-01

    Congestive heart failure has long been one of the most serious medical conditions in the United States; in fact, in the United States alone, heart failure accounts for 6.5 million days of hospitalization each year. One important goal of heart-failure therapy is to inhibit the progression of congestive heart failure through pharmacologic and device-based therapies. Therefore, there have been efforts to develop device-based therapies aimed at improving cardiac reserve and optimizing pump function to meet metabolic requirements. The course of congestive heart failure is often worsened by other conditions, including new-onset arrhythmias, ischemia and infarction, valvulopathy, decompensation, end-organ damage, and therapeutic refractoriness, that have an impact on outcomes. The onset of such conditions is sometimes heralded by subtle pathophysiologic changes, and the timely identification of these changes may promote the use of preventive measures. Consequently, device-based methods could in the future have an important role in the timely identification of the subtle pathophysiologic changes associated with congestive heart failure. PMID:18612451

  9. Plasma jet ignition device

    DOEpatents

    McIlwain, Michael E.; Grant, Jonathan F.; Golenko, Zsolt; Wittstein, Alan D.

    1985-01-15

    An ignition device of the plasma jet type is disclosed. The device has a cylindrical cavity formed in insulating material with an electrode at one end. The other end of the cylindrical cavity is closed by a metal plate with a small orifice in the center which plate serves as a second electrode. An arc jumping between the first electrode and the orifice plate causes the formation of a highly-ionized plasma in the cavity which is ejected through the orifice into the engine cylinder area to ignite the main fuel mixture. Two improvements are disclosed to enhance the operation of the device and the length of the plasma plume. One improvement is a metal hydride ring which is inserted in the cavity next to the first electrode. During operation, the high temperature in the cavity and the highly excited nature of the plasma breaks down the metal hydride, liberating hydrogen which acts as an additional fuel to help plasma formation. A second improvement consists of a cavity insert containing a plurality of spaced, metal rings. The rings act as secondary spark gap electrodes reducing the voltage needed to maintain the initial arc in the cavity.

  10. Sectional device handling tool

    DOEpatents

    Candee, Clark B.

    1988-07-12

    Apparatus for remotely handling a device in an irradiated underwater environment includes a plurality of tubular sections interconnected end-to-end to form a handling structure, the bottom section being adapted for connection to the device. A support section is connected to the top tubular section and is adapted to be suspended from an overhead crane. Each section is flanged at its opposite ends. Axially retractable bolts in each bottom flange are threadedly engageable with holes in the top flange of an adjacent section, each bolt being biased to its retracted position and retained in place on the bottom flange. Guide pins on each top flange cooperate with mating holes on adjacent bottom flanges to guide movement of the parts to the proper interconnection orientation. Each section carries two hydraulic line segments provided with quick-connect/disconnect fittings at their opposite ends for connection to the segments of adjacent tubular sections upon interconnection thereof to form control lines which are connectable to the device and to an associated control console.

  11. Thermophotovoltaic energy conversion device

    DOEpatents

    Charache, Greg W.; Baldasaro, Paul F.; Egley, James L.

    1998-01-01

    A thermophotovoltaic device and a method for making the thermophotovoltaic device. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used.

  12. Thermophotovoltaic energy conversion device

    DOEpatents

    Charache, G.W.; Baldasaro, P.F.; Egley, J.L.

    1998-05-19

    A thermophotovoltaic device and a method for making the thermophotovoltaic device are disclosed. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used. 1 fig.

  13. Double face sealing device

    NASA Technical Reports Server (NTRS)

    Weddendorf, Bruce (Inventor)

    1991-01-01

    A double face sealing device is disclosed for mounting between two surfaces to provide an air-tight and fluid-tight seal between a closure member bearing one of the surfaces and a structure or housing bearing the other surface which extends around the opening or hatchway to be closed. The double face sealing device includes a plurality of sections or segments mounted to one of the surfaces, each having a main body portion, a pair of outwardly extending and diverging, cantilever, spring arms, and a pair of inwardly extending and diverging, cantilever, spring arms, an elastomeric cover on the distal, free ends of the outwardly extending and diverging spring arms, and an elastomeric cover on the distal, free, ends of the outwardly extending and diverging spring arms, and an elastomeric cover on the distal, free ends of the inwardly extending and diverging spring arms. The double face sealing device has application or use in all environments requiring a seal, but is particularly useful to seal openings or hatchways between compartments of spacecraft or aircraft.

  14. Non- contacting capacitive diagnostic device

    DOEpatents

    Ellison, Timothy

    2005-07-12

    A non-contacting capacitive diagnostic device includes a pulsed light source for producing an electric field in a semiconductor or photovoltaic device or material to be evaluated and a circuit responsive to the electric field. The circuit is not in physical contact with the device or material being evaluated and produces an electrical signal characteristic of the electric field produced in the device or material. The diagnostic device permits quality control and evaluation of semiconductor or photovoltaic device properties in continuous manufacturing processes.

  15. Packaging of solid state devices

    DOEpatents

    Glidden, Steven C.; Sanders, Howard D.

    2006-01-03

    A package for one or more solid state devices in a single module that allows for operation at high voltage, high current, or both high voltage and high current. Low thermal resistance between the solid state devices and an exterior of the package and matched coefficient of thermal expansion between the solid state devices and the materials used in packaging enables high power operation. The solid state devices are soldered between two layers of ceramic with metal traces that interconnect the devices and external contacts. This approach provides a simple method for assembling and encapsulating high power solid state devices.

  16. Nanoscale Electronic Devices

    NASA Astrophysics Data System (ADS)

    Jing, Xiaoye

    Continuous downscaling in microelectronics has pushed conventional CMOS technology to its physical limits, while Moore's Law has correctly predicted the trend for decades, each step forward is accompanied with unprecedented technological difficulties and near-exponential increase in cost. At the same time, however, demands for low-power, low-cost and high-speed devices have never diminished, instead, even more stringent requirements have been imposed on device performances. It is therefore crucial to explore alternative materials and device architectures in order to alleviate the pressure caused by downscaling. To this end, we investigated two different approaches: (1) InSb nanowire based field effect transistors (NWFETs) and (2) single walled carbon nanotube (SWCNT) -- peptide nucleic acid (PNA) --SWCNT conjugate. Two types of InSb nanowires were synthesized by template-assisted electrochemistry and chemical vapor deposition (CVD) respectively. In both cases, NWFETs were fabricated by electron beam lithography (EBL) and crystallinity was confirmed by transmission electron microscopy (TEM) and selected area diffraction (SAD) patterns. For electrochemistry nanowire, ambipolar conduction was observed with strong p-type conduction, the effect of thermal annealing on the conductivity was analyzed, a NWFET model that took into consideration the underlapped region in top-gated NWFET was proposed. Hole mobility in the channel was calculated to be 292.84 cm2V-1s -1 with a density of 1.5x1017/cm3. For CVD nanowire, the diameter was below 40nm with an average of 20nm. Vapor-liquid-solid (VLS) process was speculated to be the mechanism responsible for nanowire growth. The efficient gate control was manifested by high ION/I OFF ratio which was on the order of 106 and a small inverse subthreshold slope (<200 mV/decade). Scale analysis was used to successfully account for disparities observed among a number of sample devices. N-type conduction was found in all NWFETs with

  17. Advanced Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Shur, Michael S.; Maki, Paul A.; Kolodzey, James

    2007-06-01

    I. Wide band gap devices. Wide-Bandgap Semiconductor devices for automotive applications / M. Sugimoto ... [et al.]. A GaN on SiC HFET device technology for wireless infrastructure applications / B. Green ... [et al.]. Drift velocity limitation in GaN HEMT channels / A. Matulionis. Simulations of field-plated and recessed gate gallium nitride-based heterojunction field-effect transistors / V. O. Turin, M. S. Shur and D. B. Veksler. Low temperature electroluminescence of green and deep green GaInN/GaN light emitting diodes / Y. Li ... [et al.]. Spatial spectral analysis in high brightness GaInN/GaN light emitting diodes / T. Detchprohm ... [et al.]. Self-induced surface texturing of Al2O3 by means of inductively coupled plasma reactive ion etching in Cl2 chemistry / P. Batoni ... [et al.]. Field and termionic field transport in aluminium gallium arsenide heterojunction barriers / D. V. Morgan and A. Porch. Electrical characteristics and carrier lifetime measurements in high voltage 4H-SiC PiN diodes / P. A. Losee ... [et al.]. Geometry and short channel effects on enhancement-mode n-Channel GaN MOSFETs on p and n- GaN/sapphire substrates / W. Huang, T. Khan and T. P. Chow. 4H-SiC Vertical RESURF Schottky Rectifiers and MOSFETs / Y. Wang, P. A. Losee and T. P. Chow. Present status and future Directions of SiGe HBT technology / M. H. Khater ... [et al.]Optical properties of GaInN/GaN multi-quantum Wells structure and light emitting diode grown by metalorganic chemical vapor phase epitaxy / J. Senawiratne ... [et al.]. Electrical comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic contacts on undoped GaN HEMTs structure with AlN interlayer / Y. Sun and L. F. Eastman. Above 2 A/mm drain current density of GaN HEMTs grown on sapphire / F. Medjdoub ... [et al.]. Focused thermal beam direct patterning on InGaN during molecular beam epitaxy / X. Chen, W. J. Schaff and L. F. Eastman -- II. Terahertz and millimeter wave devices. Temperature-dependent microwave performance of

  18. Nonimaging radiant energy direction device

    DOEpatents

    Winston, Roland

    1980-01-01

    A raidant energy nonimaging light direction device is provided. The device includes an energy transducer and a reflective wall whose contour is particularly determined with respect to the geometrical vector flux of a field associated with the transducer.

  19. Portable Source Identification Device

    SciTech Connect

    Andersen, Eric S.; Samuel, Todd J.; Gervais, Kevin L.

    2005-08-01

    U.S. Customs and Border Protection (CBP) is the primary enforcement agency protecting the nation’s ports of entry. CBP is enhancing its capability to interdict the illicit import of nuclear and radiological materials and devices that may be used by terrorists. Pacific Northwest National Laboratory (PNNL) is providing scientific and technical support to CBP in their goal to enable rapid deployment of nuclear and radiation detection systems at U. S. ports of entry to monitor 100% of the incoming international traffic and cargo while not adversely impacting the operations or throughput of the ports. As the deployment of radiation detection systems proceeds, there is a need to adapt the baseline radiation portal monitor (RPM) system technology to operations at these diverse ports of entry. When screening produces an alarm in the primary inspection RPM, the alarming vehicle is removed from the flow of commerce and the alarm is typically confirmed in a secondary inspection RPM. The portable source identification device (PSID) is a radiation sensor panel (RSP), based on thallium-doped sodium iodide (NaI(Tl)) scintillation detector and gamma spectroscopic analysis hardware and software, mounted on a scissor lift on a small truck. The lift supports a box containing a commercial off-the-shelf (COTS) sodium iodide detector that provides real-time isotopic identification, including neutron detectors to interdict Weapons of Mass Destruction (WMD) and radiation dispersion devices (RDD). The scissor lift will lower the detectors to within a foot off the ground and raise them to approximately 24 feet in the air, allowing a wide vertical scanning range.

  20. Portable source identification device

    NASA Astrophysics Data System (ADS)

    Andersen, Eric S.; Samuel, Todd J.; Gervais, Kevin L.

    2005-05-01

    U.S. Customs and Border Protection (CBP) is the primary enforcement agency protecting the nation"s ports of entry. CBP is enhancing its capability to interdict the illicit import of nuclear and radiological materials and devices that may be used by terrorists. Pacific Northwest National Laboratory (PNNL) is providing scientific and technical support to CBP in their goal to enable rapid deployment of nuclear and radiation detection systems at U. S. ports of entry to monitor 100% of the incoming international traffic and cargo while not adversely impacting the operations or throughput of the ports. As the deployment of radiation detection systems proceeds, there is a need to adapt the baseline radiation portal monitor (RPM) system technology to operations at these diverse ports of entry. When screening produces an alarm in the primary inspection RPM, the alarming vehicle is removed from the flow of commerce and the alarm is typically confirmed in a secondary inspection RPM. The portable source identification device (PSID) is a radiation sensor panel (RSP), based on thallium-doped sodium iodide (NaI(Tl)) scintillation detector and gamma spectroscopic analysis hardware and software, mounted on a scissor lift on a small truck. The lift supports a box containing a commercial off-the-shelf (COTS) sodium iodide detector that provides real-time isotopic identification, including neutron detectors to interdict Weapons of Mass Destruction (WMD) and radiation dispersion devices (RDD). The scissor lift will lower the detectors to within a foot off the ground and raise them to approximately 24 feet (7.3 m) in the air, allowing a wide vertical scanning range.

  1. Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by using Focused Ion Beam

    NASA Astrophysics Data System (ADS)

    Zhu, Wencong

    Compared with other transparent semiconductors, amorphous indium gallium zinc oxide (a-IGZO) has both good uniformity and high electron mobility, which make it as a good candidate for displays or large-scale transparent circuit. The goal of this research is to fabricate alpha-IGZO thin film transistor (TFT) with channel milled by focused ion beam (FIB). TFTs with different channel geometries can be achieved by applying different milling strategies, which facilitate modifying complex circuit. Technology Computer-Aided Design (TCAD) was also introduced to understand the effect of trapped charges on the device performance. The investigation of the trapped charge at IGZO/SiO2 interface was performed on the IGZO TFT on p-Silicon substrate with thermally grown SiO2 as dielectric. The subgap density-of-state model was used for the simulation, which includes conduction band-tail trap states and donor-like state in the subgap. The result shows that the de-trapping and donor-state ionization determine the interface trapped charge density at various gate biases. Simulation of IGZO TFT with FIB defined channel on the same substrate was also applied. The drain and source were connected intentionally during metal deposition and separated by FIB milling. Based on the simulation, the Ga ions in SiO2 introduced by the ion beam was drifted by gate bias and affects the saturation drain current. Both side channel and direct channel transparent IGZO TFTs were fabricated on the glass substrate with coated ITO. Higher ion energy (30 keV) was used to etch through the substrate between drain and source and form side channels at the corner of milled trench. Lower ion energy (16 keV) was applied to stop the milling inside IGZO thin film and direct channel between drain and source was created. Annealing after FIB milling removed the residual Ga ions and the devices show switch feature. Direct channel shows higher saturation drain current (~10-6 A) compared with side channel (~10-7 A) because

  2. 78 FR 1247 - Certain Electronic Devices, Including Wireless Communication Devices, Tablet Computers, Media...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-08

    ... COMMISSION Certain Electronic Devices, Including Wireless Communication Devices, Tablet Computers, Media... United States after importation of certain electronic devices, including wireless communication devices... importation of certain electronic devices, including wireless communication devices, tablet computers,...

  3. Air monitoring device

    NASA Technical Reports Server (NTRS)

    Tissandier, Michael D. (Inventor)

    2012-01-01

    An air monitoring device (100) includes an outer casing (101) configured to receive an airflow (102) comprising particulate; a bore (103) located inside the outer casing (101); and a collection probe (104) located inside the outer casing (101), the collection probe (104) being configured such that there is a gap (105) between an exit of the bore (103) and an entrance of the collection probe (104), such that particulate in the airflow (102) having a diameter larger than a threshold flows through an interior of the collection probe (104).

  4. Resistive Exercise Device

    NASA Technical Reports Server (NTRS)

    Smith, Damon C. (Inventor)

    2005-01-01

    An exercise device 10 is particularly well suited for use in low gravity environments, and includes a frame 12 with plurality of resistance elements 30,82 supported in parallel on the frame. A load transfer member 20 is moveable relative to the frame for transferring the applied force to the free end of each captured resistance element. Load selection template 14 is removably secured both to the load transfer member, and a plurality of capture mechanisms engage the free end of corresponding resistance elements. The force applying mechanism 53 may be a handle, harness or other user interface for applying a force to move the load transfer member.

  5. Fiber optic monitoring device

    DOEpatents

    Samborsky, J.K.

    1993-10-05

    A device for the purpose of monitoring light transmissions in optical fibers comprises a fiber optic tap that optically diverts a fraction of a transmitted optical signal without disrupting the integrity of the signal. The diverted signal is carried, preferably by the fiber optic tap, to a lens or lens system that disperses the light over a solid angle that facilitates viewing. The dispersed light indicates whether or not the monitored optical fiber or system of optical fibers is currently transmitting optical information. 4 figures.

  6. Fuel saving device

    SciTech Connect

    Imbert, J. C.

    1984-01-10

    The present invention relates to a fuel saving device adaptable to all types of carburetors, petrol engines and domestic or industrial burners, constituted by a solenoid generating a magnetic field which has an influence on the air-fuel mixture. Said solenoid has a red copper coil, has its axis oriented in parallel to the axis of the engine, and, periodically, in a first pre-determined direction, during the moon phase which goes from the full moon to the new moon, and in a second, opposite, direction, during the moon phase going from the new moon to the full moon. The invention finds an application in motor engine of low consumption.

  7. RADIATION MEASURING DEVICES

    DOEpatents

    Bouricius, G.M.B.; Rusch, G.K.

    1960-03-22

    A radiation-measuring device is described having an a-c output. The apparatus has a high-energy particle source responsive to radiation flux disposed within a housing having a pair of collector plates. A potential gradient between the source and collector plates causes ions to flow to the plates. By means of electrostatic or magnetic deflection elements connected to an alternating potential, the ions are caused to flow alternately to each of the collector plates causing an a-c signal thereon.

  8. Nanotube resonator devices

    SciTech Connect

    Jensen, Kenneth J; Zettl, Alexander K; Weldon, Jeffrey A

    2014-05-06

    A fully-functional radio receiver fabricated from a single nanotube is being disclosed. Simultaneously, a single nanotube can perform the functions of all major components of a radio: antenna, tunable band-pass filter, amplifier, and demodulator. A DC voltage source, as supplied by a battery, can power the radio. Using carrier waves in the commercially relevant 40-400 MHz range and both frequency and amplitude modulation techniques, successful music and voice reception has been demonstrated. Also disclosed are a radio transmitter and a mass sensor using a nanotube resonator device.

  9. Portable hand hold device

    NASA Technical Reports Server (NTRS)

    Redmon, Jr., John W. (Inventor); McQueen, Donald H. (Inventor); Sanders, Fred G. (Inventor)

    1990-01-01

    A hand hold device (A) includes a housing (10) having a hand hold (14) and clamping brackets (32,34) for grasping and handling an object. A drive includes drive lever (23), spur gear (22), and rack gears (24,26) carried on rods (24a, 26a) for moving the clamping brackets. A lock includes ratchet gear (40) and pawl (42) biased between lock and unlock positions by a cantilever spring (46,48) and moved by handle (54). Compliant grip pads (32b, 34b) provide compliance to lock, unlock, and hold an object between the clamp brackets.

  10. Inflatable rescue device

    NASA Technical Reports Server (NTRS)

    Swan, Scott A. (Inventor)

    1995-01-01

    This invention discloses, in one aspect, a personal rescue device for use in outer space which has an inflatable flexible tube with a shaper apparatus herein. Gas under pressure flows through the shaper apparatus and into the flexible tube. The flexible tube is mounted to the shaper so that as it inflates it expands and deploys lengthwise away from the shaper. In one embodiment a housing contains the shaper and the flexible tube and the housing is designed to facilitate movement of the expanding tube from the housing so the expanding tube does not bunch up in the housing.

  11. Micro environmental sensing device

    DOEpatents

    Polosky, Marc A.; Lukens, Laurance L.

    2006-05-02

    A microelectromechanical (MEM) acceleration switch is disclosed which includes a proof mass flexibly connected to a substrate, with the proof mass being moveable in a direction substantially perpendicular to the substrate in response to a sensed acceleration. An electrode on the proof mass contacts one or more electrodes located below the proof mass to provide a switch closure in response to the sensed acceleration. Electrical latching of the switch in the closed position is possible with an optional latching electrode. The MEM acceleration switch, which has applications for use as an environmental sensing device, can be fabricated using micromachining.

  12. Drop foot corrective device

    NASA Technical Reports Server (NTRS)

    Deis, B. C. (Inventor)

    1986-01-01

    A light weight, economical device to alleviate a plurality of difficulties encountered in walking by a victim suffering from a drop foot condition is discussed. A legband girdles the leg below the knee and above the calf providing an anchor point for the upper end of a ligament having its lower end attached to a toe of a shoe or a toe on the foot. The ligament is of such length that the foot is supported thereby and retained in a normal position during walking.

  13. Detached rock evaluation device

    DOEpatents

    Hanson, David R.

    1986-01-01

    A rock detachment evaluation device (10) having an energy transducer unit 1) for sensing vibrations imparted to a subject rock (172) for converting the sensed vibrations into electrical signals, a low band pass filter unit (12) for receiving the electrical signal and transmitting only a low frequency segment thereof, a high band pass filter unit (13) for receiving the electrical signals and for transmitting only a high frequency segment thereof, a comparison unit (14) for receiving the low frequency and high frequency signals and for determining the difference in power between the signals, and a display unit (16) for displaying indicia of the difference, which provides a quantitative measure of rock detachment.

  14. Controllable Mirror Devices

    NASA Technical Reports Server (NTRS)

    1992-01-01

    A deformable Mirror Device (DMD) is a type of spatial light modulator in which mirrors fabricated monolithically on a silicon chip are deformed, or tilted, under electronic control to change the direction of light that falls upon the mirror. NASA and Texas Instruments (TI) have worked to develop this technology, which has subsequently been commercialized by TI. Initial application is the DMD 2000 Travel Information Printer for high speed, high volume printing of airline tickets and boarding passes. Other possible applications range from real-time object tracking to advanced industrial machine vision systems.

  15. Minimally Invasive Radiofrequency Devices.

    PubMed

    Sadick, Neil; Rothaus, Kenneth O

    2016-07-01

    This article reviews minimally invasive radiofrequency options for skin tightening, focusing on describing their mechanism of action and clinical profile in terms of safety and efficacy and presenting peer-reviewed articles associated with the specific technologies. Treatments offered by minimally invasive radiofrequency devices (fractional, microneedling, temperature-controlled) are increasing in popularity due to the dramatic effects they can have without requiring skin excision, downtime, or even extreme financial burden from the patient's perspective. Clinical applications thus far have yielded impressive results in treating signs of the aging face and neck, either as stand-alone or as postoperative maintenance treatments. PMID:27363771

  16. Fiber optic monitoring device

    SciTech Connect

    Samborsky, J.K.

    1992-12-31

    This invention is comprised of a device for the purpose of monitoring light transmissions in optical fibers comprises a fiber optic tap that optically diverts a fraction of a transmitted optical signal without disrupting the integrity of the signal. The diverted signal is carried, preferably by the fiber optic tap, to a lens or lens system that disperses the light over a solid angle that facilitates viewing. The dispersed light indicates whether or not the monitored optical fiber or system of optical fibers is currently transmitting optical information.

  17. Nanochanneled Device and Related Methods

    NASA Technical Reports Server (NTRS)

    Ferrari, Mauro (Inventor); Liu, Xuewu (Inventor); Grattoni, Alessandro (Inventor); Fine, Daniel (Inventor); Goodall, Randy (Inventor); Hosali, Sharath (Inventor); Medema, Ryan (Inventor); Hudson, Lee (Inventor)

    2013-01-01

    A nanochannel delivery device and method of manufacturing and use. The nanochannel delivery device comprises an inlet, an outlet, and a nanochannel. The nanochannel may be oriented parallel to the primary plane of the nanochannel delivery device. The inlet and outlet may be in direct fluid communication with the nanochannel.

  18. 'Atomistic' Simulation of Decanano Devices

    NASA Technical Reports Server (NTRS)

    Asenov, Asen; Brown, A. R.; Davies, J. H.; Kaya, S.; Slavcheva, G.; Saini, Subhash

    2000-01-01

    When the devices are scaled to decanano dimensions the discreteness of charge and matter introduces significant 'intrinsic' parameter fluctuations. Atomic level 3D process and device modelling on statistical scale is required to understand the effects, the scale of the fluctuations and to design fluctuation resistant devices.

  19. Polycrystalline Cadmium Telluride Photovoltaic Devices

    NASA Astrophysics Data System (ADS)

    Gessert, Timothy A.; Bonnet, Dieter

    2015-10-01

    The following sections are included: * Introduction * Brief history of CdTe PV devices * Initial attempts towards commercial modules * Review of present commercial industry/device designs * General CdTe material properties * Layer-specific process description for superstrate CdTe devices * Where is the junction? * Considerations for large-scale deployment * Conclusions * Acknowledgements * References

  20. Superconducting quantum-interference devices

    NASA Technical Reports Server (NTRS)

    Peters, P. N.; Holdeman, L. B.

    1975-01-01

    Published document discusses devices which are based on weak-link Josephson elements that join superconductors. Links can take numerous forms, and circuitry utilizing links can perform many varied functions with unprecedented sensitivity. Theoretical review of Josephson's junctions include tunneling junctions, point contact devices, microbridges, and proximity-effect devices.

  1. Modeling of graphene nanoribbon devices.

    PubMed

    Guo, Jing

    2012-09-21

    Recent advances in graphene nanoribbon (GNR) electronic devices provide a concrete context for developing simulation methods, comparing theories to experiments, and using simulations to explore device physics. We present a review on modeling of graphene nanoribbon devices, with an emphasis on electronic and magnetoresistive devices. Device modeling is reviewed in a synergistic perspective with GNR material properties, device characteristics, and circuit requirements. Similarity with and difference to carbon nanotube devices are discussed. Device modeling and simulation results are compared to experimental data, which underlines the importance of theory-experiment collaborations in this field. Importance of the GNR edges, which have a negative impact on the carrier mobility due to edge roughness but offer new possibilities of spintronic devices and edge doping, is emphasized. Advanced device modeling of GNRs needs to have the capability to describe GNR device physics, including three-dimensional electrostatics, quantum and atomistic scale effects, elastic and inelastic scattering processes, electron-electron interaction, edge chemistry, magnetic field modulation, and spintronic and thermoelectric device phenomena. PMID:22875475

  2. Barriers to medical device innovation

    PubMed Central

    Bergsland, Jacob; Elle, Ole Jakob; Fosse, Erik

    2014-01-01

    The US Food and Drug Administration (FDA) has defined a medical device as a health care product that does not achieve it’s purpose by chemical action or by being metabolized. This means that a vast number of products are considered medical devices. Such devices play an essential role in the practice of medicine. The FDA classifies medical devices in three classes, depending on the risk of the device. Since Class I and II devices have relatively simple requirements for getting to the market, this review will focus on “implantable devices”, which, in general, belong to Class III. The European Union and Canada use a slightly different classification system. While early generations of medical devices were introduced without much testing, either technical or clinical, the process of introducing a Class III medical device from concept to clinical practice has become strongly regulated and requires extensive technological and clinical testing. The modern era of implantable medical devices may be considered to have started in the 1920s with development of artificial hips. The implantable pacemaker was another milestone and pacemakers and cardioverters/defibrillators have since saved millions of lives and created commercial giants in the medical device industry. This review will include some examples of cardiovascular devices. Similar considerations apply to the total implantable device market, although clinical and technological applications obviously vary considerably. PMID:24966699

  3. Modeling of graphene nanoribbon devices

    NASA Astrophysics Data System (ADS)

    Guo, Jing

    2012-08-01

    Recent advances in graphene nanoribbon (GNR) electronic devices provide a concrete context for developing simulation methods, comparing theories to experiments, and using simulations to explore device physics. We present a review on modeling of graphene nanoribbon devices, with an emphasis on electronic and magnetoresistive devices. Device modeling is reviewed in a synergistic perspective with GNR material properties, device characteristics, and circuit requirements. Similarity with and difference to carbon nanotube devices are discussed. Device modeling and simulation results are compared to experimental data, which underlines the importance of theory-experiment collaborations in this field. Importance of the GNR edges, which have a negative impact on the carrier mobility due to edge roughness but offer new possibilities of spintronic devices and edge doping, is emphasized. Advanced device modeling of GNRs needs to have the capability to describe GNR device physics, including three-dimensional electrostatics, quantum and atomistic scale effects, elastic and inelastic scattering processes, electron-electron interaction, edge chemistry, magnetic field modulation, and spintronic and thermoelectric device phenomena.

  4. Graphene device and method of using graphene device

    DOEpatents

    Bouchiat, Vincent; Girit, Caglar; Kessler, Brian; Zettl, Alexander K.

    2015-08-11

    An embodiment of a graphene device includes a layered structure, first and second electrodes, and a dopant island. The layered structure includes a conductive layer, an insulating layer, and a graphene layer. The electrodes are coupled to the graphene layer. The dopant island is coupled to an exposed surface of the graphene layer between the electrodes. An embodiment of a method of using a graphene device includes providing the graphene device. A voltage is applied to the conductive layer of the graphene device. Another embodiment of a method of using a graphene device includes providing the graphene device without the dopant island. A dopant island is placed on an exposed surface of the graphene layer between the electrodes. A voltage is applied to the conductive layer of the graphene device. A response of the dopant island to the voltage is observed.

  5. Fluid flow monitoring device

    DOEpatents

    McKay, M.D.; Sweeney, C.E.; Spangler, B.S. Jr.

    1993-11-30

    A flow meter and temperature measuring device are described comprising a tube with a body centered therein for restricting flow and a sleeve at the upper end of the tube to carry several channels formed longitudinally in the sleeve to the appropriate axial location where they penetrate the tube to allow pressure measurements and temperature measurements with thermocouples. The high pressure measurement is made using a channel penetrating the tube away from the body and the low pressure measurement is made at a location at the widest part of the body. An end plug seals the end of the device and holes at its upper end allow fluid to pass from the interior of the tube into a plenum. The channels are made by cutting grooves in the sleeve, the grooves widened at the surface of the sleeve and then a strip of sleeve material is welded to the grooves closing the channels. Preferably the sleeve is packed with powdered graphite before cutting the grooves and welding the strips. 7 figures.

  6. Micro-organ device

    NASA Technical Reports Server (NTRS)

    Gonda, Steve R. (Inventor); von Gustedt-Gonda, legal representative, Iris (Inventor); Chang, Robert C. (Inventor); Starly, Binil (Inventor); Culbertson, Christopher (Inventor); Holtorf, Heidi L. (Inventor); Sun, Wei (Inventor); Leslie, Julia (Inventor)

    2013-01-01

    A method for fabricating a micro-organ device comprises providing a microscale support having one or more microfluidic channels and one or more micro-chambers for housing a micro-organ and printing a micro-organ on the microscale support using a cell suspension in a syringe controlled by a computer-aided tissue engineering system, wherein the cell suspension comprises cells suspended in a solution containing a material that functions as a three-dimensional scaffold. The printing is performed with the computer-aided tissue engineering system according to a particular pattern. The micro-organ device comprises at least one micro-chamber each housing a micro-organ; and at least one microfluidic channel connected to the micro-chamber, wherein the micro-organ comprises cells arranged in a configuration that includes microscale spacing between portions of the cells to facilitate diffusion exchange between the cells and a medium supplied from the at least one microfluidic channel.

  7. Micro-Organ Device

    NASA Technical Reports Server (NTRS)

    Gonda, Steve R. (Inventor); Chang, Robert C. (Inventor); Starly, Binil (Inventor); Culbertson, Christopher (Inventor); Holtorf, Heidi L. (Inventor); Sun, Wei (Inventor); Leslie, Julia (Inventor)

    2013-01-01

    A method for fabricating a micro-organ device comprises providing a microscale support having one or more microfluidic channels and one or more micro-chambers for housing a micro-organ and printing a micro-organ on the microscale support using a cell suspension in a syringe controlled by a computer-aided tissue engineering system, wherein the cell suspension comprises cells suspended in a solution containing a material that functions as a three-dimensional scaffold. The printing is performed with the computer-aided tissue engineering system according to a particular pattern. The micro-organ device comprises at least one micro-chamber each housing a micro-organ; and at least one microfluidic channel connected to the micro-chamber, wherein the micro-organ comprises cells arranged in a configuration that includes microscale spacing between portions of the cells to facilitate diffusion exchange between the cells and a medium supplied from the at least one microfluidic channel.

  8. Fluid flow monitoring device

    DOEpatents

    McKay, Mark D.; Sweeney, Chad E.; Spangler, Jr., B. Samuel

    1993-01-01

    A flow meter and temperature measuring device comprising a tube with a body centered therein for restricting flow and a sleeve at the upper end of the tube to carry several channels formed longitudinally in the sleeve to the appropriate axial location where they penetrate the tube to allow pressure measurements and temperature measurements with thermocouples. The high pressure measurement is made using a channel penetrating the tube away from the body and the low pressure measurement is made at a location at the widest part of the body. An end plug seals the end of the device and holes at its upper end allow fluid to pass from the interior of the tube into a plenum. The channels are made by cutting grooves in the sleeve, the grooves widened at the surface of the sleeve and then a strip of sleeve material is welded to the grooves closing the channels. Preferably the sleeve is packed with powdered graphite before cutting the grooves and welding the strips.

  9. Charge coupled devices

    NASA Technical Reports Server (NTRS)

    Walker, J. W.; Hornbeck, L. J.; Stubbs, D. P.

    1977-01-01

    The results are presented of a program to design, fabricate, and test CCD arrays suitable for operation in an electron-bombarded mode. These intensified charge coupled devices have potential application to astronomy as photon-counting arrays. The objectives of this program were to deliver arrays of 250 lines of 400 pixels each and some associated electronics. Some arrays were delivered on tube-compatible headers and some were delivered after incorporation in vacuum tubes. Delivery of these devices required considerable improvements to be made in the processing associated with intensified operation. These improvements resulted in a high yield in the thinning process, reproducible results in the accumulation process, elimination of a dark current source in the accumulation process, solution of a number of header related problems, and the identification of a remaining major source of dark current. Two systematic failure modes were identified and protective measures established. The effects of tube processing on the arrays in the delivered ICCDs were determined and are reported along with the characterization data on the arrays.

  10. Liver Cell Culture Devices

    PubMed Central

    Andria, B.; Bracco, A.; Cirino, G.; Chamuleau, R. A. F. M.

    2010-01-01

    In the last 15 years many different liver cell culture devices, consisting of functional liver cells and artificial materials, have been developed. They have been devised for numerous different applications, such as temporary organ replacement (a bridge to liver transplantation or native liver regeneration) and as in vitro screening systems in the early stages of the drug development process, like assessing hepatotoxicity, hepatic drug metabolism, and induction/inhibition studies. Relevant literature is summarized about artificial human liver cell culture systems by scrutinizing PubMed from 2003 to 2009. Existing devices are divided in 2D configurations (e.g., static monolayer, sandwich, perfused cells, and flat plate) and 3D configurations (e.g., liver slices, spheroids, and different types of bioreactors). The essential features of an ideal liver cell culture system are discussed: different types of scaffolds, oxygenation systems, extracellular matrixes (natural and artificial), cocultures with nonparenchymal cells, and the role of shear stress problems. Finally, miniaturization and high-throughput systems are discussed. All these factors contribute in their own way to the viability and functionality of liver cells in culture. Depending on the aim for which they are designed, several good systems are available for predicting hepatotoxicity and hepatic metabolism within the general population. To predict hepatotoxicity in individual cases genomic analysis might be essential as well. PMID:26998397

  11. Heterostructure terahertz devices.

    PubMed

    Ryzhii, Victor

    2008-08-19

    The terahertz (THz) range of frequencies is borderline between microwave electronics and photonics. It corresponds to the frequency bands of molecular and lattice vibrations in gases, fluids, and solids. The importance of the THz range is in part due to numerous potential and emerging applications which include imaging and characterization, detection of hazardous substances, environmental monitoring, radio astronomy, covert inter-satellite communications, as well as biological and medical applications. During the last decades marked progress has been achieved in the development, fabrication, and practical implementation of THz devices and systems. This is primarily owing to the utilization of gaseous and free electron lasers and frequency converters using nonlinear optical phenomena as sources of THz radiation. However, such devices and hence the systems based on them are fairly cumbersome. This continuously stimulates an extensive search for new compact and efficient THz sources based on semiconductor heterostructures. Despite tremendous efforts lasting several decades, the so-called THz gap unbridged by semiconductor heterostructure electron and optoelectron devices still exists providing appropriate levels of power of the generated THz radiation. The invention and realization of quantum cascade lasers made of multiple quantum-well heterostructures already resulted in the partial solution of the problem in question, namely, in the successful coverage of the high-frequency portion of the THz gap (2-3 THz and higher). Further advancement to lower frequencies meets, perhaps, fundamental difficulties. All this necessitates further extensive theoretical and experimental studies of more or less traditional and novel semiconductor heterostructures as a basis for sources of THz radiation. This special issue includes 11 excellent original papers submitted by several research teams representing 14 institutions in Europe, America, and Asia. Several device concepts which

  12. Neuroelectric Virtual Devices

    NASA Technical Reports Server (NTRS)

    Wheeler, Kevin; Jorgensen, Charles

    2000-01-01

    This paper presents recent results in neuroelectric pattern recognition of electromyographic (EMG) signals used to control virtual computer input devices. The devices are designed to substitute for the functions of both a traditional joystick and keyboard entry method. We demonstrate recognition accuracy through neuroelectric control of a 757 class simulation aircraft landing at San Francisco International Airport using a virtual joystick as shown. This is accomplished by a pilot closing his fist in empty air and performing control movements that are captured by a dry electrode array on the arm which are then analyzed and routed through a flight director permitting full pilot outer loop control of the simulation. We then demonstrate finer grain motor pattern recognition through a virtual keyboard by having a typist tap his traders on a typical desk in a touch typist position. The EMG signals are then translated to keyboard presses and displayed. The paper describes the bioelectric pattern recognition methodology common to both examples. Figure 2 depicts raw EMG data from typing, the numeral '8' and the numeral '9'. These two gestures are very close in appearance and statistical properties yet are distinguishable by our hidden Kharkov model algorithms. Extensions of this work to NASA emissions and robotic control are considered.

  13. Devices as destination therapy.

    PubMed

    Kukuy, Eugene L; Oz, Mehmet C; Rose, Eric A; Naka, Yoshifumi

    2003-02-01

    The use of circulatory support as destination therapy has been a goal for the treatment of endstage heart failure for several decades. Current investigations are evaluating several circulatory pumps with that particular objective. With continued modification of design, the current and future pumps will become more reliable and provide improved quality of life to patients in need of mechanical circulatory assistance. The new pumps on the horizon specifically address reliability, size, and cost, and are based on the centrifugal system. These devices use the Maglev (Magnetic Levitation) concept that allows for frictionless pumping, low thrombogenicity, minimal noise, and increased durability. Further research with this goal in mind and support from the federal government will be the key to the future use of circulatory assistance as destination therapy for heart failure patients. In addition, the cost-effectiveness of these devices will need to be maintained as the technology improves, as in any new technology that confronts a more intuitive option like the native heart. PMID:12790046

  14. Payload retention device

    NASA Technical Reports Server (NTRS)

    Monford, Leo G., Jr. (Inventor)

    1992-01-01

    A payload retention device for grappling and retaining a payload in docked position on a supporting structure in the cargo bay of a space vehicle is presented. The device comprises a two-fault tolerant electromagnetic grappling system comprising electromagnets for attracting and grappling a grapple strike plate affixed to the payload when in proximity thereto and an electromechanical latching assembly comprising a pair of independent latching subassemblies. Each subassembly comprises a set of latching pawls which are driven into latching and unlatching positions relative to a grappled payload by a pair of gearmotors, each equipped with a ratchet clutch drive mechanism which is two-fault tolerant with respect to latching such that only one gearmotor of the four needs to be operational to effect a latch of the payload but is single fault tolerant with respect to release of a latched payload. Sensors are included for automatically sensing the magnetic grappling of a payload and for automatically de-energizing the gearmotors of the latching subassemblies when a latch condition is achieved.

  15. Devices for insulin administration.

    PubMed

    Selam, J L; Charles, M A

    1990-09-01

    There is a significant need for revised, safe, and more effective insulin-delivery methods than subcutaneous injections in the treatment of both type I (insulin-dependent) and type II (non-insulin-dependent) diabetes. The aim of this review is to describe the rationale and methods for better use of injection and infusion devices for intensive insulin therapy and to describe results of animal and human research that will lead to an implantable artificial pancreas. Injection devices, e.g., jet injectors, insulin pens, and access ports, cannot be considered as a major breakthrough in the quest for improved control, although they may improve the patient's comfort. External pumps have benefits over multiple injections and conventional insulin therapy only in specific subgroups of patients, e.g., those with recurrent severe hypoglycemia, but only when used by experienced personnel. The external artificial pancreas (Biostator) is also to be used by experienced personnel for limited clinical and research applications, e.g., surgery of the diabetic patient. The development of an implantable version of the artificial pancreas is linked to progress in the field of reliable long-duration glucose sensors. Finally, programmable implantable insulin pumps, used as an open-loop delivery system, are the most promising alternative to intensive subcutaneous insulin strategies in the short term, although clear evidence of improved safety and efficacy remains to be documented. PMID:2226111

  16. Carbon based prosthetic devices

    SciTech Connect

    Devlin, D.J.; Carroll, D.W.; Barbero, R.S.; Archuleta, T.; Klawitter, J.J.; Ogilvie, W.; Strzepa, P.; Cook, S.D.

    1998-12-31

    This is the final report of a one-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project objective was to evaluate the use of carbon/carbon-fiber-reinforced composites for use in endoprosthetic devices. The application of these materials for the metacarpophalangeal (MP) joints of the hand was investigated. Issues concerning mechanical properties, bone fixation, biocompatibility, and wear are discussed. A system consisting of fiber reinforced materials with a pyrolytic carbon matrix and diamond-like, carbon-coated wear surfaces was developed. Processes were developed for the chemical vapor infiltration (CVI) of pyrolytic carbon into porous fiber preforms with the ability to tailor the outer porosity of the device to provide a surface for bone in-growth. A method for coating diamond-like carbon (DLC) on the articulating surface by plasma-assisted chemical vapor deposition (CVD) was developed. Preliminary results on mechanical properties of the composite system are discussed and initial biocompatibility studies were performed.

  17. Locomotive safety device

    SciTech Connect

    Kleffman, D.R.; Phiffer, L.V.

    1987-01-20

    This patent describes the environment of a longitudinally extending and diesel engine type railroad locomotive classified under a stopped and ''blue flag'' condition, the locomotive having its traction wheels powerable from a high-voltage main-generator. The locomotive is also equipped with a low-voltage auxiliary-generator having electrical circuitry connected to locomotive installed alarm means, to at least one fuel valve for the diesel engine, to locomotive forward-rearward motive directional control, and to locomotive acceleration control. The low-voltage electrical circuitry extends the locomotive longitudinal length and terminates as two endward multi-pins receptacles. The improvement of a locomotive safety device tending to enforce upon would be the locomotive operators ''blue flag'' condition. The locomotive safety device is adapted to removably engaged with a locomotive multipins receptacle and comprises a multi-perforate plug including electrically conductive bushings adapted to be removably inserted into electrically conductive relationship with appropriately selected individual pins of the multi-pins receptacle.

  18. Thermoplastic tape compaction device

    DOEpatents

    Campbell, V.W.

    1994-12-27

    A device is disclosed for bonding a thermoplastic tape to a substrate to form a fully consolidated composite. This device has an endless chain associated with a frame so as to rotate in a plane that is perpendicular to a long dimension of the tape, the chain having pivotally connected chain links with each of the links carrying a flexible foot member that extends outwardly from the chain. A selected number of the foot members contact the tape, after the heating thereof, to cause the heated tape to bond to the substrate. The foot members are each a thin band of metal oriented transversely to the chain, with a flexibility and width and length to contact the tape so as to cause the tape to conform to the substrate to achieve consolidation of the tape and the substrate. A biased leaf-type spring within the frame bears against an inner surface of the chain to provide the compliant pressure necessary to bond the tape to the substrate. The chain is supported by sprockets on shafts rotatably supported in the frame and, in one embodiment, one of the shafts has a drive unit to produce rotation such that the foot members in contact with the tape move at the same speed as the tape. Cooling jets are positioned along the frame to cool the resultant consolidated composite. 5 figures.

  19. Thermoplastic tape compaction device

    DOEpatents

    Campbell, Vincent W.

    1994-01-01

    A device for bonding a thermoplastic tape to a substrate to form a fully consolidated composite. This device has an endless chain associated with a frame so as to rotate in a plane that is perpendicular to a long dimension of the tape, the chain having pivotally connected chain links with each of the links carrying a flexible foot member that extends outwardly from the chain. A selected number of the foot members contact the tape, after the heating thereof, to cause the heated tape to bond to the substrate. The foot members are each a thin band of metal oriented transversely to the chain, with a flexibility and width and length to contact the tape so as to cause the tape to conform to the substrate to achieve consolidation of the tape and the substrate. A biased leaf-type spring within the frame bears against an inner surface of the chain to provide the compliant pressure necessary to bond the tape to the substrate. The chain is supported by sprockets on shafts rotatably supported in the frame and, in one embodiment, one of the shafts has a drive unit to produce rotation such that the foot members in contact with the tape move at the same speed as the tape. Cooling jets are positioned along the frame to cool the resultant consolidated composite.

  20. Stretchable and foldable electronic devices

    DOEpatents

    Rogers, John A; Huang, Yonggang; Ko, Heung Cho; Stoykovich, Mark; Choi, Won Mook; Song, Jizhou; Ahn, Jong Hyun; Kim, Dae Hyeong

    2014-12-09

    Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

  1. Stretchable and foldable electronic devices

    DOEpatents

    Rogers, John A; Huang, Yonggang; Ko, Heung Cho; Stoykovich, Mark; Choi, Won Mook; Song, Jizhou; Ahn, Jong Hyun; Kim, Dae Hyeong

    2013-10-08

    Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

  2. Medical Devices; Ophthalmic Devices; Classification of Nasolacrimal Compression Device. Final order.

    PubMed

    2016-06-10

    The Food and Drug Administration (FDA) is classifying the nasolacrimal compression device into class I (general controls). The Agency is classifying the device into class I (general controls) in order to provide a reasonable assurance of safety and effectiveness of the device. PMID:27295735

  3. 21 CFR 874.5840 - Antistammering device.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ...) MEDICAL DEVICES EAR, NOSE, AND THROAT DEVICES Therapeutic Devices § 874.5840 Antistammering device. (a) Identification. An antistammering device is a device that electronically generates a noise when activated or when... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Antistammering device. 874.5840 Section...

  4. 21 CFR 874.5840 - Antistammering device.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ...) MEDICAL DEVICES EAR, NOSE, AND THROAT DEVICES Therapeutic Devices § 874.5840 Antistammering device. (a) Identification. An antistammering device is a device that electronically generates a noise when activated or when... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Antistammering device. 874.5840 Section...

  5. Cybersecurity for Connected Diabetes Devices

    PubMed Central

    Klonoff, David C.

    2015-01-01

    Diabetes devices are increasingly connected wirelessly to each other and to data-displaying reader devices. Threats to the accurate flow of information and commands may compromise the function of these devices and put their users at risk of health complications. Sound cybersecurity of connected diabetes devices is necessary to maintain confidentiality, integrity, and availability of the data and commands. Diabetes devices can be hacked by unauthorized agents and also by patients themselves to extract data that are not automatically provided by product software. Unauthorized access to connected diabetes devices has been simulated and could happen in reality. A cybersecurity standard designed specifically for connected diabetes devices will improve the safety of these products and increase confidence of users that the products will be secure. PMID:25883162

  6. Cybersecurity for Connected Diabetes Devices.

    PubMed

    Klonoff, David C

    2015-09-01

    Diabetes devices are increasingly connected wirelessly to each other and to data-displaying reader devices. Threats to the accurate flow of information and commands may compromise the function of these devices and put their users at risk of health complications. Sound cybersecurity of connected diabetes devices is necessary to maintain confidentiality, integrity, and availability of the data and commands. Diabetes devices can be hacked by unauthorized agents and also by patients themselves to extract data that are not automatically provided by product software. Unauthorized access to connected diabetes devices has been simulated and could happen in reality. A cybersecurity standard designed specifically for connected diabetes devices will improve the safety of these products and increase confidence of users that the products will be secure. PMID:25883162

  7. Optical storage device

    NASA Technical Reports Server (NTRS)

    Welch, Sharon S.

    1991-01-01

    A new holographic image storage device which uses four-wave mixing in two photorefractive crystals is described. Photorefractive crystals promise information storage densities on the order of 10(exp 9) to 10(exp 12) bits per cubic centimeter at real-time rates. Several studies in recent years have investigated the use of photorefractive crystals for storing holographic image information. However, all of the previous studies have focused on techniques for storing information in a single crystal. The disadvantage of using a single crystal is that the read process is destructive. Researchers have developed techniques for fixing the information in a crystal so that it may be read many times. However, when fixed, the information cannot be readily erased and overwritten with new information. It two photorefractive crystals are used, holographic image information may be stored dynamically. That is, the stored image information may be read out more than once, and it may be easily erased and overwritten with new image information.

  8. Personal annunciation device

    SciTech Connect

    Angelo, Peter; Younkin, James; DeMint, Paul

    2011-01-25

    A personal annunciation device (PAD) providing, in an area of interest, compensatory annunciation of the presence of an abnormal condition in a hazardous area and accountability of the user of the PAD. Compensatory annunciation supplements primary annunciation provided by an emergency notification system (ENS). A detection system detects an abnormal condition, and a wireless transmission system transmits a wireless transmission to the PAD. The PAD has a housing enclosing the components of the PAD including a communication module for receiving the wireless transmission, a power supply, processor, memory, annunciation system, and RFID module. The RFID module has an RFID receiver that listens for an RFID transmission from an RFID reader disposed in a portal of an area of interest. The PAD identifies the transmission and changes its operating state based on the transmission. The RFID readers recognize, record, and transmit the state of the PAD to a base station providing accountability of the wearer.

  9. Laser beam steering device

    NASA Technical Reports Server (NTRS)

    Motamedi, M. E.; Andrews, A. P.; Gunning, W. J.

    1993-01-01

    Agile beam steering is a critical requirement for airborne and space based LIDAR and optical communication systems. Design and test results are presented for a compact beam steering device with low inertia which functions by dithering two complementary (positive and negative) binary optic microlens arrays relative to each other in directions orthogonal to the direction of light propagation. The miniaturized system has been demonstrated at scan frequencies as high as 300 Hz, generating a 13 x 13 spot array with a total field of view of 2.4 degrees. The design is readily extendable to a 9.5 degree field of view and a 52 x 52 scan pattern. The system is compact - less than 2 in. on a side. Further size reductions are anticipated.

  10. Tool setting device

    DOEpatents

    Brown, Raymond J.

    1977-01-01

    The present invention relates to a tool setting device for use with numerically controlled machine tools, such as lathes and milling machines. A reference position of the machine tool relative to the workpiece along both the X and Y axes is utilized by the control circuit for driving the tool through its program. This reference position is determined for both axes by displacing a single linear variable displacement transducer (LVDT) with the machine tool through a T-shaped pivotal bar. The use of the T-shaped bar allows the cutting tool to be moved sequentially in the X or Y direction for indicating the actual position of the machine tool relative to the predetermined desired position in the numerical control circuit by using a single LVDT.

  11. Polarization Perception Device

    NASA Technical Reports Server (NTRS)

    Whitehead, Victor S. (Inventor); Coulson, Kinsell L. (Inventor)

    1997-01-01

    A polarization perception device comprises a base and a polarizing filter having opposite broad sides and a centerline perpendicular thereto. The filter is mounted on the base for relative rotation and with a major portion of the area of the filter substantially unobstructed on either side. A motor on the base automatically moves the filter angularly about its centerline at a speed slow enough to permit changes in light transmission by virtue of such movement to be perceived as light-dark pulses by a human observer, but fast enough so that the light phase of each such pulse occurs prior to fading of the light phase image of the preceding pulse from the observer's retina. In addition to an observer viewing a scene in real time through the filter while it is so angularly moved, or instead of such observation, the scene can be photographed, filmed or taped by a camera whose lens is positioned behind the filter.

  12. Pressure Relief Devices

    NASA Astrophysics Data System (ADS)

    Manha, William D.

    2010-09-01

    Pressure relief devices are used in pressure systems and on pressure vessels to prevent catastrophic rupture or explosion from excessive pressure. Pressure systems and pressure vessels have manufacturers maximum rated operating pressures or maximum design pressures(MDP) for which there are relatively high safety factors and minimum risk of rupture or explosion. Pressure systems and pressure vessels that have a potential to exceed the MDP by being connected to another higher pressure source, a compressor, or heat to water(boiler) are required to have over-pressure protecting devices. Such devices can be relief valves and/or burst discs to safely relieve potentially excessive pressure and prevent unacceptable ruptures and explosions which result in fail-safe pressure systems and pressure vessels. Common aerospace relief valve and burst disc requirements and standards will be presented. This will include the NASA PSRP Interpretation Letter TA-88-074 Fault Tolerance of Systems Using Specially Certified Burst Disks that dictates burst disc requirements for payloads on Shuttle. Two recent undesirable manned space payloads pressure relief devices and practices will be discussed, as well as why these practices should not be continued. One example for discussion is the use of three burst discs that have been placed in series to comply with safety requirements of three controls to prevent a catastrophic hazard of the over-pressurization and rupture of pressure system and/or vessels. The cavities between the burst discs are evacuated and are the reference pressures for activating the two upstream burst discs. If the upstream burst disc leaks into the reference cavity, the reference pressure increases and it can increase the burst disc activating pressure and potentially result in the burst disc assembly being ineffective for over pressure protection. The three burst discs-in-series assembly was found acceptable because the burst discs are designed for minimum risk(DFMR) of

  13. Electrical safety device

    DOEpatents

    White, David B.

    1991-01-01

    An electrical safety device for use in power tools that is designed to automatically discontinue operation of the power tool upon physical contact of the tool with a concealed conductive material. A step down transformer is used to supply the operating power for a disconnect relay and a reset relay. When physical contact is made between the power tool and the conductive material, an electrical circuit through the disconnect relay is completed and the operation of the power tool is automatically interrupted. Once the contact between the tool and conductive material is broken, the power tool can be quickly and easily reactivated by a reset push button activating the reset relay. A remote reset is provided for convenience and efficiency of operation.

  14. Polarization perception device

    NASA Technical Reports Server (NTRS)

    Whitehead, Victor S. (Inventor); Coulson, Kinsel L. (Inventor)

    1992-01-01

    A polarization perception device comprises a base and a polarizing filter having opposite broad sides and a centerline perpendicular thereto. The filter is mounted on the base for relative rotation and with a major portion of the area of the filter substantially unobstructed on either side. A motor on the base automatically moves the filter angularly about its centerline at a speed slow enough to permit changes in light transmission by virtue of such movement to be perceived as light-dark pulses by a human observer, but fast enough so that the light phase of each such pulse occurs prior to fading of the light phase image of the preceding pulse from the observer's retina. In addition to an observer viewing a scene in real time through the filter while it is so angularly moved, or instead of such observation, the scene can be photographed, filmed or taped by a camera whose lens is positioned behind the filter.

  15. Efficient thermoelectric device

    NASA Technical Reports Server (NTRS)

    Ila, Daryush (Inventor)

    2010-01-01

    A high efficiency thermo electric device comprising a multi nanolayer structure of alternating insulator and insulator/metal material that is irradiated across the plane of the layer structure with ionizing radiation. The ionizing radiation produces nanocrystals in the layered structure that increase the electrical conductivity and decrease the thermal conductivity thereby increasing the thermoelectric figure of merit. Figures of merit as high as 2.5 have been achieved using layers of co-deposited gold and silicon dioxide interspersed with layers of silicon dioxide. The gold to silicon dioxide ratio was 0.04. 5 MeV silicon ions were used to irradiate the structure. Other metals and insulators may be substituted. Other ionizing radiation sources may be used. The structure tolerates a wide range of metal to insulator ratio.

  16. Nuclear reactor safety device

    DOEpatents

    Hutter, E.

    1983-08-15

    A safety device is described for use in a nuclear reactor for axially repositioning a control rod with respect to the reactor core in the event of a thermal excursion. It comprises a laminated strip helically configured to form a tube, said tube being in operative relation to said control rod. The laminated strip is formed of at least two materials having different thermal coefficients of expansion, and is helically configured such that the material forming the outer lamina of the tube has a greater thermal coefficient of expansion than the material forming the inner lamina of said tube. In the event of a thermal excursion the laminated strip will tend to curl inwardly so that said tube will increase in length, whereby as said tube increases in length it exerts a force on said control rod to axially reposition said control rod with respect to said core.

  17. CUSP-PINCH DEVICE

    DOEpatents

    Baker, W.R.; Watteau, J.P.H.

    1962-06-01

    An ion-electron plasma heating device of the pinch tube class is designed with novel means for counteracting the instabilities of an ordinary linear pinch discharge. A plasma-forming discharge is created between two spacedapart coaxial electiodes through a gas such as deuterium. A pair of spaced coaxial magnetic field coils encircle the discharge and carry opposing currents so that a magnetic field having a cuspate configuration is created around the plasma, the field being formed after the plasma has been established but before significant instability arises. Thus, containment time is increased and intensified heating is obtained. In addition to the pinch compression heating additional heating is obtained by high-frequency magnetic field modulation. (AEC)

  18. Torsional Magnetorheological Device

    NASA Technical Reports Server (NTRS)

    Arnold, Steven M. (Inventor); Penney, Nicholas (Inventor)

    2008-01-01

    A magnetorheological device comprising a housing having a divider within the housing is disclosed and claimed. A rotary impeller having two paddles is rotatably mounted within the housing. The rotary impeller sealingly engages the divider and the paddles in combination with the divider forms a first chamber and a second chamber. Magnetorheological fluid resides in the chambers and a passageway interconnects the first and second chambers. A coil surrounds a portion of the passageway such that when energized the magnetorheological fluid solidifies plugging the passageway. As the impeller rotates, it pushes the incompressible fluid against the divider in the housing and the plug in the passageway and retards and/or stops the motion of the impeller.

  19. Air bag restraint device

    DOEpatents

    Marts, D.J.; Richardson, J.G.

    1995-10-17

    A rear-seat air bag restraint device is disclosed that prevents an individual, or individuals, from continuing violent actions while being transported in a patrol vehicle`s rear seat without requiring immediate physical contact by the law enforcement officer. The air bag is activated by a control switch in the front seat and inflates to independently restrict the amount of physical activity occurring in the rear seat of the vehicle while allowing the officer to safely stop the vehicle. The air bag can also provide the officer additional time to get backup personnel to aid him if the situation warrants it. The bag is inflated and maintains a constant pressure by an air pump. 8 figs.

  20. Materials for optoelectronic devices

    DOEpatents

    Shiang, Joseph John; Smigelski, Jr., Paul Michael

    2015-01-27

    Energy efficient optoelectronic devices include an electroluminescent layer containing a polymer made up of structural units of formula I and II; ##STR00001## wherein R.sup.1 and R.sup.2 are independently C.sub.22-44 hydrocarbyl, C.sub.22-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, oxaalkylaryl, or a combination thereof; R.sup.3 and R.sup.4 are independently H, C.sub.1-44 hydrocarbyl or C.sub.1-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, or R.sup.3 and R.sup.4, taken together, form a C.sub.2-10 monocyclic or bicyclic ring containing up to three S, N, O, P, or Si heteroatoms; and X is S, Se, or a combination thereof.

  1. TWO-SPEED DEVICE

    DOEpatents

    Brunson, G.S. Jr.

    1961-04-01

    A two-speed device is described comprising a two-part stop engageable with a follower. The two-pant stop comprises first and second members in threaded engagement with each other. The first member is restrained against rotation but is free to move longitudinally, and the second member is free to move arially and rotatively. Means are provided to impart rotation to the second member. The follower is engageable first with an end of one member and then with the corresponding end of the other member after some relative longitudinal movement of the members with respect to one another due to the rotation of the second member and the holding of the first member against rotation.

  2. Light emitting ceramic device

    DOEpatents

    Valentine, Paul; Edwards, Doreen D.; Walker, Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

    2010-05-18

    A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, is herein claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

  3. Value contamination avoidance devices

    NASA Technical Reports Server (NTRS)

    Endicott, D. L.

    1975-01-01

    Mechanical redesign methods were used to minimize contamination damage of conventional fluid components and a contamination separator device was developed for long term reusable space vehicles. These were incorporated into an existing 50.8 mm poppet valve and tested for damage tolerance in a full size open loop flow system with gaseous and liquid nitrogen. Cyclic and steady flow conditions were tested with particles of 125 to 420 micrometers aluminum oxide dispersed in the test fluids. Nonflow life tests (100,000 cycles) were made with two valve configurations in gaseous hydrogen. The redesigned valve had an acceptable cycle life and improved tolerance to contamination damage when the primary sealing surfaces were coated with thin coatings of hard plastic (Teflon S and Kynar). Analytical studies and flow testing were completed of four different versions of the separator. overall separation efficiencies in the 55-90% range were measured with these non-optimum configurations.

  4. Multichannel optical sensing device

    DOEpatents

    Selkowitz, S.E.

    1985-08-16

    A multichannel optical sensing device is disclosed, for measuring the outdoor sky luminance or illuminance or the luminance or illuminance distribution in a room, comprising a plurality of light receptors, an optical shutter matrix including a plurality of liquid crystal optical shutter elements operable by electrical control signals between light transmitting and light stopping conditions, fiber optical elements connected between the receptors and the shutter elements, a microprocessor based programmable control unit for selectively supplying control signals to the optical shutter elements in a programmable sequence, a photodetector including an optical integrating spherical chamber having an input port for receiving the light from the shutter matrix and at least one detector element in the spherical chamber for producing output signals corresponding to the light, and output units for utilizing the output signals including a storage unit having a control connection to the microprocessor based programmable control unit for storing the output signals under the sequence control of the programmable control unit.

  5. Multichannel optical sensing device

    DOEpatents

    Selkowitz, Stephen E.

    1990-01-01

    A multichannel optical sensing device is disclosed, for measuring the outr sky luminance or illuminance or the luminance or illuminance distribution in a room, comprising a plurality of light receptors, an optical shutter matrix including a plurality of liquid crystal optical shutter elements operable by electrical control signals between light transmitting and light stopping conditions, fiber optic elements connected between the receptors and the shutter elements, a microprocessor based programmable control unit for selectively supplying control signals to the optical shutter elements in a programmable sequence, a photodetector including an optical integrating spherical chamber having an input port for receiving the light from the shutter matrix and at least one detector element in the spherical chamber for producing output signals corresponding to the light, and output units for utilizing the output signals including a storage unit having a control connection to the microprocessor based programmable control unit for storing the output signals under the sequence control of the programmable control unit.

  6. False color viewing device

    DOEpatents

    Kronberg, James W.

    1992-01-01

    A viewing device for observing objects in near-infrared false-color comprising a pair of goggles with one or more filters in the apertures, and pads that engage the face for blocking stray light from the sides so that all light reaching the user's eyes come through the filters. The filters attenuate most visible light and pass near-infrared (having wavelengths longer than approximately 700 nm) and a small amount of blue-green and blue-violet (having wavelengths in the 500 to 520 nm and shorter than 435 nm, respectively). The goggles are useful for looking at vegetation to identify different species and for determining the health of the vegetation, and to detect some forms of camouflage.

  7. Ultrasonography of intrauterine devices

    PubMed Central

    Nowitzki, Kristina M.; Hoimes, Matthew L.; Chen, Byron; Zheng, Larry Z.; Kim, Young H.

    2015-01-01

    The intrauterine device (IUD) is gaining popularity as a reversible form of contraception. Ultrasonography serves as first-line imaging for the evaluation of IUD position in patients with pelvic pain, abnormal bleeding, or absent retrieval strings. This review highlights the imaging of both properly positioned and malpositioned IUDs. The problems associated with malpositioned IUDs include expulsion, displacement, embedment, and perforation. Management considerations depend on the severity of the malposition and the presence or absence of symptoms. Three-dimensional ultrasonography has proven to be more sensitive in the evaluation of more subtle findings of malposition, particularly side-arm embedment. Familiarity with the ultrasonographic features of properly positioned and malpositioned IUDs is essential. PMID:25985959

  8. Rotary encoding device

    NASA Technical Reports Server (NTRS)

    Leviton, Douglas B. (Inventor)

    1993-01-01

    A device for position encoding of a rotating shaft in which a polygonal mirror having a number of facets is mounted to the shaft and a light beam is directed towards the facets is presented. The facets of the polygonal mirror reflect the light beam such that a light spot is created on a linear array detector. An analog-to-digital converter is connected to the linear array detector for reading the position of the spot on the linear array detector. A microprocessor with memory is connected to the analog-to-digital converter to hold and manipulate the data provided by the analog-to-digital converter on the position of the spot and to compute the position of the shaft based upon the data from the analog-to-digital converter.

  9. Linear encoding device

    NASA Technical Reports Server (NTRS)

    Leviton, Douglas B. (Inventor)

    1993-01-01

    A Linear Motion Encoding device for measuring the linear motion of a moving object is disclosed in which a light source is mounted on the moving object and a position sensitive detector such as an array photodetector is mounted on a nearby stationary object. The light source emits a light beam directed towards the array photodetector such that a light spot is created on the array. An analog-to-digital converter, connected to the array photodetector is used for reading the position of the spot on the array photodetector. A microprocessor and memory is connected to the analog-to-digital converter to hold and manipulate data provided by the analog-to-digital converter on the position of the spot and to compute the linear displacement of the moving object based upon the data from the analog-to-digital converter.

  10. Tunable surface plasmon devices

    DOEpatents

    Shaner, Eric A.; Wasserman, Daniel

    2011-08-30

    A tunable extraordinary optical transmission (EOT) device wherein the tunability derives from controlled variation of the dielectric constant of a semiconducting material (semiconductor) in evanescent-field contact with a metallic array of sub-wavelength apertures. The surface plasmon resonance wavelength can be changed by changing the dielectric constant of the dielectric material. In embodiments of this invention, the dielectric material is a semiconducting material. The dielectric constant of the semiconducting material in the metal/semiconductor interfacial region is controllably adjusted by adjusting one or more of the semiconductor plasma frequency, the concentration and effective mass of free carriers, and the background high-frequency dielectric constant in the interfacial region. Thermal heating and/or voltage-gated carrier-concentration changes may be used to variably adjust the value of the semiconductor dielectric constant.

  11. Millimeter wave nonreciprocal devices

    NASA Astrophysics Data System (ADS)

    Morgenthaler, F. R.

    1983-01-01

    The Microwave and Quantum Magnetics Group within the MIT Department of Electrical Engineering and Computer Science and the Research Laboratory of Electronics proposed a three year research program aimed at developing coherent magnetic wave signal-processing techniques for microwave energy which may form either the primary signal or else the intermediate frequency (IF) modulation of millimeter wavelength signals-especially at frequencies in the 50-94 GHz. range. Emphasis has been placed upon developing advanced types of signal processors that make use of quasi-optical propagation of electromagnetic and magnetostatic waves propagating in high quality single crystal ferrite thin films. A strong theoretical effort is required in order to establish valid models useful for predicting device performance. We emphasized new filter and circulator designs that employ combinations of the Faraday effect, field displacement nonreciprocity and magnetostatic resonance and periodic structures.

  12. Module isolation devices

    SciTech Connect

    Carolan, Michael Francis; Cooke, John Albert; Buzinski, Michael David

    2010-04-27

    A gas flow isolation device includes a gas flow isolation valve movable from an opened condition to a closed condition. The module isolation valve in one embodiment includes a rupture disk in flow communication with a flow of gas when the module isolation valve is in an opened condition. The rupture disk ruptures when a predetermined pressure differential occurs across it causing the isolation valve to close. In one embodiment the valve is mechanically linked to the rupture disk to maintain the valve in an opened condition when the rupture disk is intact, and which permits the valve to move into a closed condition when the rupture disk ruptures. In another embodiment a crushable member maintains the valve in an open condition, and the flow of gas passed the valve upon rupturing of the rupture disk compresses the crushable member to close the isolation valve.

  13. Cathodochromic storage device

    NASA Technical Reports Server (NTRS)

    Bosomworth, D. R.; Moles, W. H.

    1969-01-01

    A memory and display device has been developed by combing a fast phosphor layer with a cathodochromic layer in a cathode ray tube. Images are stored as patterns of electron beam induced optical density in the cathodo-chromic material. The stored information is recovered by exciting the backing, fast phosphor layer with a constant current electron beam and detecting the emitted radiation which is modulated by absorption in the cathodochromic layer. The storage can be accomplished in one or more TV frames (1/30 sec each). More than 500 TV line resolution and close to 2:1 contrast ratio are possible. The information storage time in a dark environment is approximately 24 hours. A reconstituted (readout) electronic video signal can be generated continuously for times in excess of 10 minutes or periodically for several hours.

  14. AKM capture device

    NASA Technical Reports Server (NTRS)

    Harwell, William D.

    1987-01-01

    In an effort to recover the Westar and Palapa satellites and the considerable investment each represented, NASA and Hughes undertook the Satellite Retrieval Mission. The mechanism used to capture each of the errant satellites was the AKM (Apogee Kick Motor) Capture Device (ACD), also referred to as the Stinger. The ACD had three interface requirements: interface with the Manned Maneuvering Unit (MMU) for transportation to and stabilization of the spacecrafts; interface with each satellite for retrieval; and finally, interface with the Shuttle's Remote Manipulator System (RMS or robot arm) for satellite transport back to the Orbiter's payload bay. The majority of the design requirements were associated with the capture and release of the satellites. In addition to these unique requirements, the general EVA, RMS grapple, and RMS manipulation requirements applied. These requirements included thermal, glare, snag, RMS runaway and crewman safety considerations.

  15. Capillary interconnect device

    DOEpatents

    Renzi, Ronald F.

    2007-12-25

    A manifold for connecting external capillaries to the inlet and/or outlet ports of a microfluidic device for high pressure applications is provided. The fluid connector for coupling at least one fluid conduit to a corresponding port of a substrate that includes: (i) a manifold comprising one or more channels extending therethrough wherein each channel is at least partially threaded, (ii) one or more threaded ferrules each defining a bore extending therethrough with each ferrule supporting a fluid conduit wherein each ferrule is threaded into a channel of the manifold, (iii) a substrate having one or more ports on its upper surface wherein the substrate is positioned below the manifold so that the one or more ports is aligned with the one or more channels of the manifold, and (iv) means for applying an axial compressive force to the substrate to couple the one or more ports of the substrate to a corresponding proximal end of a fluid conduit.

  16. Capacitance measuring device

    DOEpatents

    Andrews, W.H. Jr.

    1984-08-01

    A capacitance measuring circuit is provided in which an unknown capacitance is measured by comparing the charge stored in the unknown capacitor with that stored in a known capacitance. Equal and opposite voltages are repetitively simultaneously switched onto the capacitors through an electronic switch driven by a pulse generator to charge the capacitors during the ''on'' portion of the cycle. The stored charge is compared by summing discharge currents flowing through matched resistors at the input of a current sensor during the ''off'' portion of the switching cycle. The net current measured is thus proportional to the difference in value of the two capacitances. The circuit is capable of providing much needed accuracy and stability to a great variety of capacitance-based measurement devices at a relatively low cost.

  17. Monitored separation device

    NASA Technical Reports Server (NTRS)

    Jackson, George William (Inventor); Willson, Richard Coale (Inventor); Fox, George Edward (Inventor)

    2011-01-01

    A device for separating and purifying useful quantities of particles comprises: a. an anolyte reservoir connected to an anode, the anolyte reservoir containing an electrophoresis buffer; b. a catholyte reservoir connected to a cathode, the catholyte reservoir also containing the electrophoresis buffer; c. a power supply connected to the anode and to the cathode; d. a column having a first end inserted into the anolyte reservoir, a second end inserted into the catholyte reservoir, and containing a separation medium; e. a light source; f. a first optical fiber having a first fiber end inserted into the separation medium, and having a second fiber end connected to the light source; g. a photo detector; h. a second optical fiber having a third fiber end inserted into the separation medium, and having a fourth fiber end connected to the photo detector; and i. an ion-exchange membrane in the anolyte reservoir.

  18. False color viewing device

    DOEpatents

    Kronberg, J.W.

    1992-10-20

    A viewing device for observing objects in near-infrared false-color comprising a pair of goggles with one or more filters in the apertures, and pads that engage the face for blocking stray light from the sides so that all light reaching the user's eyes come through the filters. The filters attenuate most visible light and pass near-infrared (having wavelengths longer than approximately 700 nm) and a small amount of blue-green and blue-violet (having wavelengths in the 500 to 520 nm and shorter than 435 nm, respectively). The goggles are useful for looking at vegetation to identify different species and for determining the health of the vegetation, and to detect some forms of camouflage. 7 figs.

  19. False color viewing device

    DOEpatents

    Kronberg, J.W.

    1991-05-08

    This invention consists of a viewing device for observing objects in near-infrared false-color comprising a pair of goggles with one or more filters in the apertures, and pads that engage the face for blocking stray light from the sides so that all light reaching, the user`s eyes come through the filters. The filters attenuate most visible light and pass near-infrared (having wavelengths longer than approximately 700 nm) and a small amount of blue-green and blue-violet (having wavelengths in the 500 to 520 nm and shorter than 435 nm, respectively). The goggles are useful for looking at vegetation to identify different species and for determining the health of the vegetation, and to detect some forms of camouflage.

  20. Void detecting device

    DOEpatents

    Nakamoto, Koichiro; Ohyama, Nobumi; Adachi, Kiyoshi; Kuwahara, Hajime

    1979-01-01

    A detector to be inserted into a flowing conductive fluid, e.g. sodium coolant in a nuclear reactor, comprising at least one exciting coil to receive an a-c signal applied thereto and two detecting coils located in the proximity of the exciting coil. The difference and/or the sum of the output signals of the detecting coils is computed to produce a flow velocity signal and/or a temperature-responsive signal for the fluid. Such flow velocity signal or temperature signal is rectified synchronously by a signal the phase of which is shifted substantially .+-. 90.degree. with respect to the flow velocity signal or temperature signal, thereby enabling the device to detect voids in the flowing fluid without adverse effects from flow velocity variations or flow disturbances occurring in the fluid.

  1. Air bag restraint device

    DOEpatents

    Marts, Donna J.; Richardson, John G.

    1995-01-01

    A rear-seat air bag restraint device is disclosed that prevents an individual, or individuals, from continuing violent actions while being transported in a patrol vehicle's rear seat without requiring immediate physical contact by the law enforcement officer. The air bag is activated by a control switch in the front seat and inflates to independently restrict the amount of physical activity occurring in the rear seat of the vehicle while allowing the officer to safely stop the vehicle. The air bag can also provide the officer additional time to get backup personnel to aid him if the situation warrants it. The bag is inflated and maintains a constant pressure by an air pump.

  2. Silicon Nanowire Devices

    NASA Astrophysics Data System (ADS)

    Kamins, Theodore

    2006-03-01

    Metal-catalyzed, self-assembled, one-dimensional semiconductor nanowires are being considered as possible device elements to augment and supplant conventional electronics and to extend the use of CMOS beyond the physical and economic limits of conventional technology. Such nanowires can create nanostructures without the complexity and cost of extremely fine scale lithography. The well-known and controllable properties of silicon make silicon nanowires especially attractive. Easy integration with conventional electronics will aid their acceptance and incorporation. For example, connections can be formed to both ends of a nanowire by growing it laterally from a vertical surface formed by etching the top silicon layer of a silicon-on-insulator structure into isolated electrodes. Field-effect structures are one class of devices that can be readily built in silicon nanowires. Because the ratio of surface to volume in a thin nanowire is high, conduction through the nanowire is very sensitive to surface conditions, making it effective as the channel of a field-effect transistor or as the transducing element of a gas or chemical sensor. As the nanowire diameter decreases, a greater fraction of the mobile charge can be modulated by a given external charge, increasing the sensitivity. Having the gate of a nanowire transistor completely surround the nanowire also enhances the sensitivity. For a field-effect sensor to be effective, the charge must be physically close to the nanowire so that the majority of the compensating charge is induced in the nanowire and so that ions in solution do not screen the charge. Because only induced charge is being sensed, a coating that selectively binds the target species should be added to the nanowire surface to distinguish between different species in the analyte. The nanowire work at Hewlett-Packard Laboratories was supported in part by the Defense Advanced Research Projects Agency.

  3. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack

    NASA Astrophysics Data System (ADS)

    Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin

    2015-12-01

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack under a maximal processing temperature of 300 oC. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at -17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at -14 V, a memory window of 2.08 V was still maintained after 103 P/E cycles, and a memory window of 1.1 V was retained after 105 s retention time.

  4. Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

    SciTech Connect

    Jang, Jaeman; Kim, Dae Geun; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan E-mail: drlife@kookmin.ac.kr; Lim, Jun-Hyung; Lee, Je-Hun; Ahn, Byung Du E-mail: drlife@kookmin.ac.kr; Kim, Yong-Sung

    2014-10-13

    The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model, in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy V{sub O}{sup 2+} or peroxide O{sub 2}{sup 2−} with the increase of EOT. It was also found that the V{sub O}{sup 2+}-related extrinsic factor accounts for 80%–92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O{sub 2}{sup 2–} related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The key founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.

  5. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack

    SciTech Connect

    Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin

    2015-12-15

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack under a maximal processing temperature of 300 {sup o}C. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 10{sup 3} P/E cycles, and a memory window of 1.1 V was retained after 10{sup 5} s retention time.

  6. Electronic structure of intrinsic defects in non-stoichiometric amorphous In-Ga-Zn-O semiconductors

    NASA Astrophysics Data System (ADS)

    Han, Woo Hyun; Chang, Kee Joo

    Amorphous oxide semiconductors, such as amorphous In-Ga-Zn-O (a-IGZO), have attracted much attention because of their use as a channel material in thin-film transistors (TFTs). Despite many advantages such as flexibility, transparency, and high electron mobility, a-IGZO based TFTs suffer from defects which cause the instability of threshold voltage under negative bias illumination stress (NBIS) as well as positive bias stress (PBS). Recently, we have proposed that O-vacancy and O-interstitial defects are responsible for the NBIS and PBS instabilities, respectively. In the previous studies, O-related defects were intentionally introduced in stoichiometric a-IGZO. Since the composition ratio is likely to be deviated from the ideal stoichiometry during fabrication, it is important to understand the electronic structure of non-stoichiometric a-IGZO. Here we perform density functional calculations to investigate the electronic structure of O-related defects in various a-IGZO systems with non-stoichiometric chemical compositions, which are generated through melt-and-quench molecular dynamics simulations. We consder both O-abundant and O-deficient samples and discuss the role of intrinsic defects in the device instability.

  7. High mobility bottom gate InGaZnO thin film transistors with SiO{sub x} etch stopper

    SciTech Connect

    Kim, Minkyu; Jeong, Jong Han; Lee, Hun Jung; Ahn, Tae Kyung; Shin, Hyun Soo; Park, Jin-Seong; Jeong, Jae Kyeong; Mo, Yeon-Gon; Kim, Hye Dong

    2007-05-21

    The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching. To prevent plasma damage to the active channel, a 100-nm-thick SiO{sub x} layer deposited by plasma enhanced chemical vapor deposition was adopted as an etch stopper structure. The a-IGZO TFT (W/L=10 {mu}m/50 {mu}m) fabricated on glass exhibited a high field-effect mobility of 35.8 cm{sup 2}/V s, a subthreshold gate swing value of 0.59 V/decade, a thrseshold voltage of 5.9 V, and an I{sub on/off} ratio of 4.9x10{sup 6}, which is acceptable for use as the switching transistor of an active-matrix TFT backplane.

  8. Safe-haven locking device

    DOEpatents

    Williams, J.V.

    1984-04-26

    Disclosed is a locking device for eliminating external control of a secured space formed by fixed and movable barriers. The locking device uses externally and internally controlled locksets and a movable strike, operable from the secured side of the movable barrier, to selectively engage either lockset. A disengagement device, for preventing forces from being applied to the lock bolts is also disclosed. In this manner, a secured space can be controlled from the secured side as a safe-haven. 4 figures.

  9. Low-Voltage Bypass Device

    NASA Technical Reports Server (NTRS)

    Wilson, J. P.

    1994-01-01

    Improved bypass device provides low-resistance current shunt around low-voltage power cell when cell fails in open-circuit condition during operation. In comparison with older bypass devices for same application, this one weighs less, generates less heat, and has lower voltage drop (less resistance). Bypass device connected in parallel with power cell. Draws very little current during normal operation of cell.

  10. Optoelectronic devices toward monolithic integration

    NASA Astrophysics Data System (ADS)

    Ghergia, V.

    1992-12-01

    Starting from the present state of tl art of discrete devices up to the on going realization of monolithic semicorxtuctor integrated prototypes an overview ofoptoelectronic devices for telecom applications is given inchiding a short classification of the different kind of integrated devices. On the future perspective of IBCN distribution network some economica of hybrid and monolithic forms of integration are attempted. lnaflyashoitpresentationoftheactivitiesperformedintbefieldofmonolithic integration by EEC ESPR1T and RACE projects is reported. 1.

  11. [An automotic dialyser reuse device].

    PubMed

    Gao, H; Zhang, Z H

    2000-03-01

    This article introduces an automatic dialyser reuse device used to rinse and disinfect dialysers. The Forcing signal generated by automatic program controller is fed into an output circuit and amplified to operate the execute device to realize the mechanical operation for treating the dialyser and the blood lines according to the program. This automatic dialyser reuse operation devices is able to replace the manual operation completely and enhances the reuse operation performance. PMID:12583126

  12. Combined docking and grasping device

    NASA Technical Reports Server (NTRS)

    Burch, J. L.; Johnston, J. D. (Inventor)

    1977-01-01

    A combined docking and grasping device for use with a manipulator arm on a docking vehicle and the like for mechanically connecting a docking vehicle with an orbital payload having a receptacle for receiving the device is described. The device includes a pair of opposing jaw members having opposing serrated surfaces for grasping an object and a triangular cam portion on an outer surface for insertion and interlocking with an orbital payload.

  13. Stabilizing Semiconductor Devices With Hydrogen

    NASA Technical Reports Server (NTRS)

    Overhauser, Albert W.; Maserjian, Joseph

    1989-01-01

    Damage by radiation healed rapidly. Feature provides continuous, rapid recovery of devices from degradation caused by hot electrons, photons, and ionizing radiation. Several candidate sites for palladium film catalysts, inserted during manufacture as integral parts of devices. Paladium films made by evaporation, sputtering, or chemical-vapor deposition. If additional storage required, thick layer of palladium plated on inside of package surrounding device. Hydrogen stored by exposing palladium to hydrogen gas just before package sealed hermetically.

  14. CDC field mapping device - ''ROTOTRACK''

    SciTech Connect

    Yamada, R.; Hawtree, J.; Kaczar, K.; Leverence, R.; McGuire, K.; Newman-Holmes, C.; Schmidt, E.E.; Shallenberger, J.

    1985-10-01

    A field mapping device for the magnet of the Collider Detector at Fermilab (CDF) was constructed. The device was used for extensive study of the CDF magnetic field distribution. The mechanical and electrical features of the device, as well as the data acquisition system and software, are described. The mechanical system was designed so that the errors on the position and angle of the probe were +-0.75 mm and +-1 mrad, respectively.

  15. Remote handling devices in MLF

    NASA Astrophysics Data System (ADS)

    Kinoshita, Hidetaka; Teshigawara, Makoto; Ito, Manabu; Takagiwa, Katsunori; Meigo, Shinichiro; Maekawa, Fujio; Kaminaga, Masanori; Futakawa, Masatoshi

    2009-02-01

    The experimental facilities at J-PARC (Japan Proton Accelerator Research Complex) include the Materials and Life science Facility (MLF) with a JSNS (Japan Spallation Neutron Source). The main components of the JSNS need to be exchanged because of material damage due to proton and neutron irradiation. The irradiated components must be remotely maintained. Several kinds of areas, such as a hot-cell, are provided for remote handling operations. Several remote handling devices, such as a power manipulator (PM), master-slave manipulators (MSMs), a target exchange truck, a cutting device, a moderator exchange device, etc. have been installed. The commissioning tests for the remote handling devices are almost complete.

  16. Fuel-air control device

    SciTech Connect

    Norman, J.

    1981-12-15

    The invention concerns a device for controlling the vehicles fuel-air mixture by regulating the air in the ventilation passage leading to the engine air intake from the crankcase. In a vehicle provided with a PCV valve, the device is located in the ventilation passage leading from the crankcase to the engine air intake and the device is downstream of the PCV valve. The device admits outside air to the ventilation passage to lean the gas mixture when the engine creates a vacuum less than 8 psi in the ventilation passage.

  17. Structured wafer for device processing

    SciTech Connect

    Okandan, Murat; Nielson, Gregory N

    2014-05-20

    A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.

  18. Structured wafer for device processing

    SciTech Connect

    Okandan, Murat; Nielson, Gregory N

    2014-11-25

    A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.

  19. Implantable medical devices MRI safe.

    PubMed

    Dal Molin, Renzo; Hecker, Bertrand

    2013-01-01

    Pacemakers, ICDs, neurostimulators like deep brain stimulator electrodes, spiral cord stimulators, insulin pumps, cochlear implants, retinal implants, hearing aids, electro cardio gram (ECG) leads, or devices in interventional MRI such as vascular guide wires or catheters are affected by MRI magnetic and electromagnetic fields. Design of MRI Safe medical devices requires computer modeling, bench testing, phantom testing, and animal studies. Implanted medical devices can be MRI unsafe, MRI conditional or MRI safe (see glossary). In the following paragraphs we will investigate how to design implanted medical devices MRI safe. PMID:23739365

  20. Microbiopsy/precision cutting devices

    DOEpatents

    Krulevitch, P.A.; Lee, A.P.; Northrup, M.A.; Benett, W.J.

    1999-07-27

    Devices are disclosed for performing tissue biopsy on a small scale (microbiopsy). By reducing the size of the biopsy tool and removing only a small amount of tissue or other material in a minimally invasive manner, the risks, costs, injury and patient discomfort associated with traditional biopsy procedures can be reduced. By using micromachining and precision machining capabilities, it is possible to fabricate small biopsy/cutting devices from silicon. These devices can be used in one of four ways (1) intravascularly, (2) extravascularly, (3) by vessel puncture, and (4) externally. Additionally, the devices may be used in precision surgical cutting. 6 figs.

  1. Microbiopsy/precision cutting devices

    DOEpatents

    Krulevitch, Peter A.; Lee, Abraham P.; Northrup, M. Allen; Benett, William J.

    1999-01-01

    Devices for performing tissue biopsy on a small scale (microbiopsy). By reducing the size of the biopsy tool and removing only a small amount of tissue or other material in a minimally invasive manner, the risks, costs, injury and patient discomfort associated with traditional biopsy procedures can be reduced. By using micromachining and precision machining capabilities, it is possible to fabricate small biopsy/cutting devices from silicon. These devices can be used in one of four ways 1) intravascularly, 2) extravascularly, 3) by vessel puncture, and 4) externally. Additionally, the devices may be used in precision surgical cutting.

  2. Energy recovery device

    SciTech Connect

    Evans, V.

    1982-08-31

    The energy recovery device includes a housing having a central shaft which is connected to a lever operating a work-load system capable of generating work-load forces. The central shaft is also connected to a disk having four posts generally parallel to the shaft and initially located at positions corresponding to the four major points of a compass. Within each corner of the housing, a helically coiled spring is positioned over a support post. Each spring has two extending arms which contact two respective adjacent posts on the disk so as to maintain the spring under tension. When the lever is at the neutral position, I.E., when no work-load forces are generated, the recovery forces generated by the four springs within the housing are generally balanced. As the lever is displaced from the neutral position by a driving force, the disk rotates whereby the angular displacement between the arms of any spring decreases. Once the disk is displaced, the spring forces aid in continuing displacement of the disk. Simultaneously the work-load system generates forces which oppose any displacement. The springs are preferably configured and dimensioned so that, at any given displacement of the lever from the neutral position, the recovery forces generally counterbalance the work-load forces. Thus the lever will remain at a given displacement when the driving force applied to the lever is removed. Additionally, the counterbalancing of forces permits continued displacement of the lever with a minimal and constant driving force.

  3. Cable load sensing device

    DOEpatents

    Beus, Michael J.; McCoy, William G.

    1998-01-01

    Apparatus for sensing the magnitude of a load on a cable as the cable is employed to support the load includes a beam structure clamped to the cable so that a length of the cable lies along the beam structure. A spacer associated with the beam structure forces a slight curvature in a portion of the length of cable under a cable "no-load" condition so that the portion of the length of cable is spaced from the beam structure to define a cable curved portion. A strain gauge circuit including strain gauges is secured to the beam structure by welding. As the cable is employed to support a load the load causes the cable curved portion to exert a force normal to the cable through the spacer and on the beam structure to deform the beam structure as the cable curved portion attempts to straighten under the load. As this deformation takes place, the resistance of the strain gauges is set to a value proportional to the magnitude of the normal strain on the beam structure during such deformation. The magnitude of the normal strain is manipulated in a control device to generate a value equal to the magnitude or weight of the load supported by the cable.

  4. Device for improved combustion

    SciTech Connect

    Polomchak, R.W.; Yacko, M.

    1988-03-08

    A device for improved combustion is described comprising: a tubular housing member having a first end and a second end, the first and second ends each having a circular opening therethrough; a combustion chamber disposed about the second end of the-tubular-housing member; a first conduit member extending from the first end of the tubular housing member and in fluid communication with the circular opening in the first end of the tubular housing member so as to allow the passage of air therethrough; a second conduit member axially disposed within the first conduit member and extending through the first conduit member and through the tubular housing member to the circular opening the second end of the tubular housing member so as to allow the passage of fuel therethrough; means for effecting turbulence in the air passing through the tubular housing member; means for effecting turbulence in the fuel passing through the second conduit member; means for intermixing and emitting the turbulent air and the fuel in a mushroom shaped configuration with the turbulent air surrounding the mushroom shaped configuration so as to substantially eliminate noxious waste gases as by-product of combustion of the air and fuel mixture.

  5. Defects and device performance

    NASA Technical Reports Server (NTRS)

    Storti, G.; Armstrong, R.; Johnson, S.; Lin, H. C.; Regnault, W.; Yoo, K. C.

    1985-01-01

    The necessity for a low-cost crystalline silicon sheet material for photovoltaics has generated a number of alternative crystal growth techniques that would replace Czochralski (Cz) and float-zone (FZ) technologies. Efficiencies of devices fabricated from low resistivity FZ silicon are approaching 20%, and it is highly likely that this value will be superseded in the near future. However, FZ silicon is expensive, and is unlikely ever to be used for photovoltaics. Cz silicon has many of the desirable qualities of FZ except that minority-carrier lifetimes at lower resistivities are significantly less than those of FZ silicon. Even with Cz silicon, it is unlikely that cost goals can be met because of the poor-material yield that results from sawing and other aspects of the crystal rowth. Although other silicon sheet technologies have been investigated, almost all have characteristics that limit efficiency to approx. 16%. In summary, 20% efficient solar cells can likely be fabricated from both FZ and Cz silicon, but costs are likely to be ultimately unacceptable. Alternate silicon technologies are not likely to achieve this goal, but cost per watt figures may be eventually better than either of the single crystal technologies and may rival any thin-film technology.

  6. Temperature differential detection device

    DOEpatents

    Girling, Peter M.

    1986-01-01

    A temperature differential detection device for detecting the temperature differential between predetermined portions of a container wall is disclosed as comprising a Wheatstone bridge circuit for detecting resistance imbalance with a first circuit branch having a first elongated wire element mounted in thermal contact with a predetermined portion of the container wall, a second circuit branch having a second elongated wire element mounted in thermal contact with a second predetermined portion of a container wall with the wire elements having a predetermined temperature-resistant coefficient, an indicator interconnected between the first and second branches remote from the container wall for detecting and indicating resistance imbalance between the first and second wire elements, and connector leads for electrically connecting the wire elements to the remote indicator in order to maintain the respective resistance value relationship between the first and second wire elements. The indicator is calibrated to indicate the detected resistance imbalance in terms of a temperature differential between the first and second wall portions.

  7. Energy rays tracking device

    SciTech Connect

    Monk, R.J.

    1981-05-12

    An energy rays tracking device includes a receiver for fixing a position relative to the direction of maximum energy rays, a prime mover for maintaining the alignment of the receiver and an energy rays user, an energy rays tracker for controlling the power to the prime mover in response to the receiver, a timed tracker for controlling the prime mover when the energy rays tracker is not functioning due to energy rays being too diffused, an energy sensitive element for detecting the presence or absence of energy rays, and a power controller responsive to the energy sensitive element for repositioning the receiver and the energy rays user for the following period of tracking is disclosed. The receiver includes an enclosure which only allows a selected pattern of direct rays to penetrate into the enclosure. A razor sharp edge at the opening of the enclosure maintains the outermost direct energy rays undiffused. A differential sensor sensitive to direct energy rays is installed inside the enclosure for determining the direction of the direct energy rays. In an application for tracking the sun, the time tracker uses a piecewise linear method of tracking. In the return cycle during the night, the return is interspersed with a wash cycle for cleaning the energy rays user.

  8. Temperature differential detection device

    DOEpatents

    Girling, P.M.

    1986-04-22

    A temperature differential detection device for detecting the temperature differential between predetermined portions of a container wall is disclosed as comprising a Wheatstone bridge circuit for detecting resistance imbalance with a first circuit branch having a first elongated wire element mounted in thermal contact with a predetermined portion of the container wall, a second circuit branch having a second elongated wire element mounted in thermal contact with a second predetermined portion of a container wall with the wire elements having a predetermined temperature-resistant coefficient, an indicator interconnected between the first and second branches remote from the container wall for detecting and indicating resistance imbalance between the first and second wire elements, and connector leads for electrically connecting the wire elements to the remote indicator in order to maintain the respective resistance value relationship between the first and second wire elements. The indicator is calibrated to indicate the detected resistance imbalance in terms of a temperature differential between the first and second wall portions. 2 figs.

  9. Material bagging device

    DOEpatents

    Wach, Charles G.; Nelson, Robert E.; Brak, Stephen B.

    1984-01-01

    A bagging device for transferring material from one chamber through an opening in a wall to a second chamber includes a cylindrical housing communicating with the opening and defining a passage between the chambers. A cylindrical cartridge is slidably received within the housing. The cartridge has a substantially rigid cylindrical sleeve to which is affixed a pliable tube. The pliable tube is positioned concentrically about the sleeve and has a pleated portion capable of unfolding from the sleeve and a closed end extending over a terminal end of the sleeve. Sealing means are interposed in sealed relationship between the cartridge and the housing. Material from one chamber is inserted into the cartridge secured in the housing and received in the closed end of the tube which unfolds into the other chamber enclosing the material therein. The tube may then be sealed behind the material and then severed to form a bag-like enclosure defined by the tube's closed terminal end and the new seal. The new seal then forms a terminal end for the unsevered portion of the pliable tube into which additional material may be placed and the bagging process repeated.

  10. Cable load sensing device

    SciTech Connect

    Beus, M.J.; McCoy, W.G.

    1996-12-31

    Apparatus for sensing the magnitude of a load on a cable as the cable is employed to support the load includes a beam structure clamped to the cable so that a length of the cable lies along the beam structure. A spacer associated with the beam structure forces a slight curvature in a portion of the length of cable under a cable no-load condition so that the portion of the length of cable is spaced from the beam structure to define a cable curved portion. A strain gauge circuit including strain gauges is secured to the beam structure by welding. As the cable is employed to support a load the load causes the cable curved portion to exert a force normal to the cable through the spacer and on the beam structure to deform the beam structure as the cable curved portion attempts to straighten under the load. As this deformation takes place, the resistance of the strain gauges is set to a value proportional to the magnitude of the normal strain on the beam structure during such deformation. The magnitude of the normal strain is manipulated in a control device to generate a value equal to the magnitude or weight of the load supported by the cable.

  11. ITER tokamak device

    NASA Astrophysics Data System (ADS)

    Doggett, J.; Salpietro, E.; Shatalov, G.

    1991-07-01

    The results of the Conceptual Design Activities for the International Thermonuclear Experimental Reactor (ITER) are summarized. These activities, carried out between April 1988 and December 1990, produced a consistent set of technical characteristics and preliminary plans for co-ordinated research and development support of ITER, a conceptual design, a description of design requirements and a preliminary construction schedule and cost estimate. After a description of the design basis, an overview is given of the tokamak device, its auxiliary systems, facility and maintenance. The interrelation and integration of the various subsystems that form the ITER tokamak concept are discussed. The 16 ITER equatorial port allocations, used for nuclear testing, diagnostics, fueling, maintenance, and heating and current drive, are given, as well as a layout of the reactor building. Finally, brief descriptions are given of the major ITER sub-systems, i.e., (1) magnet systems (toroidal and poloidal field coils and cryogenic systems), (2) containment structures (vacuum and cryostat vessels, machine gravity supports, attaching locks, passive loops and active coils), (3) first wall, (4) divertor plate (design and materials, performance and lifetime, a.o.), (5) blanket/shield system, (6) maintenance equipment, (7) current drive and heating, (8) fuel cycle system, and (9) diagnostics.

  12. Left Ventricular Assist Devices

    PubMed Central

    2004-01-01

    Executive Summary Objective The objective of this health technology policy assessment was to determine the effectiveness and cost-effectiveness of using implantable ventricular assist devices in the treatment of end-stage heart failure. Heart Failure Heart failure is a complex syndrome that impairs the ability of the heart to maintain adequate blood circulation, resulting in multiorgan abnormalities and, eventually, death. In the period of 1994 to 1997, 38,702 individuals in Ontario had a first hospital admission for heart failure. Despite reported improvement in survival, the five-year mortality rate for heart failure is about 50%. For patients with end-stage heart failure that does not respond to medical therapy, surgical treatment or traditional circulatory assist devices, heart transplantation (in appropriate patients) is the only treatment that provides significant patient benefit. Heart Transplant in Ontario With a shortage in the supply of donor hearts, patients are waiting longer for a heart transplant and may die before a donor heart is available. From 1999 to 2003, 55 to 74 people received a heart transplant in Ontario each year. Another 12 to 21 people died while waiting for a suitable donor heart. Of these, 1 to 5 deaths occurred in people under 18 years old. The rate-limiting factor in heart transplant is the supply of donor hearts. Without an increase in available donor hearts, attempts at prolonging the life of some patients on the transplant wait list could have a harmful effect on other patients that are being pushed down the waiting list (knock on effect). LVAD Technology Ventricular assist devices [VADs] have been developed to provide circulatory assistance to patients with end-stage heart failure. These are small pumps that usually assist the damaged left ventricle [LVADs] and may be situated within the body (intracorporeal] or outside the body [extracorporeal). Some of these devices were designed for use in the right ventricle [RVAD] or both

  13. 77 FR 51571 - Certain Wireless Communication Devices, Portable Music and Data Processing Devices, Computers...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-24

    ... COMMISSION Certain Wireless Communication Devices, Portable Music and Data Processing Devices, Computers, and.... International Trade Commission has received a complaint entitled Wireless Communication Devices, Portable Music... communication devices, portable music and data processing devices, computers, and components thereof....

  14. 77 FR 58576 - Certain Wireless Communication Devices, Portable Music and Data Processing Devices, Computers...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-21

    ... COMMISSION Certain Wireless Communication Devices, Portable Music and Data Processing Devices, Computers, and... importation of certain wireless communication devices, portable music and data processing devices, computers... after importation of certain wireless communication devices, portable music and data processing...

  15. Improved Thermoelectric Devices: Advanced Semiconductor Materials for Thermoelectric Devices

    SciTech Connect

    2009-12-11

    Broad Funding Opportunity Announcement Project: Phononic Devices is working to recapture waste heat and convert it into usable electric power. To do this, the company is using thermoelectric devices, which are made from advanced semiconductor materials that convert heat into electricity or actively remove heat for refrigeration and cooling purposes. Thermoelectric devices resemble computer chips, and they manage heat by manipulating the direction of electrons at the nanoscale. These devices aren’t new, but they are currently too inefficient and expensive for widespread use. Phononic Devices is using a high-performance, cost-effective thermoelectric design that will improve the device’s efficiency and enable electronics manufacturers to more easily integrate them into their products.

  16. Left Ventricular Assist Device Implantation After Intracardiac Parachute Device Removal.

    PubMed

    Abu Saleh, Walid K; Al Jabbari, Odeaa; Bruckner, Brian A; Suarez, Erik E; Estep, Jerry D; Loebe, Matthias

    2015-08-01

    Left ventricular assist device implantation is a proven and efficient modality for the treatment of end-stage heart failure. Left ventricular assist device versatility as a bridge to heart transplantation or destination therapy has led to improved patient outcomes with a concomitant rise in its overall use. Other less invasive treatment modalities are being developed to improve heart function and morbidity and mortality for the heart failure population. Percutaneous ventricular restoration is a new investigational therapy that deploys an intracardiac parachute to wall off damaged myocardium in patients with dilated left ventricles and ischemic heart failure. Clinical trials are under way to test the efficacy of percutaneous ventricular restoration using the parachute device. This review describes our encounter with the parachute device, its explantation due to refractory heart failure, and surgical replacement with a left ventricular assist device. PMID:26234850

  17. Highly Efficient Multilayer Thermoelectric Devices

    NASA Technical Reports Server (NTRS)

    Boufelfel, Ali

    2006-01-01

    Multilayer thermoelectric devices now at the prototype stage of development exhibit a combination of desirable characteristics, including high figures of merit and high performance/cost ratios. These devices are capable of producing temperature differences of the order of 50 K in operation at or near room temperature. A solvent-free batch process for mass production of these state-of-the-art thermoelectric devices has also been developed. Like prior thermoelectric devices, the present ones have commercial potential mainly by virtue of their utility as means of controlled cooling (and/or, in some cases, heating) of sensors, integrated circuits, and temperature-critical components of scientific instruments. The advantages of thermoelectric devices for such uses include no need for circulating working fluids through or within the devices, generation of little if any noise, and high reliability. The disadvantages of prior thermoelectric devices include high power consumption and relatively low coefficients of performance. The present development program was undertaken in the hope of reducing the magnitudes of the aforementioned disadvantages and, especially, obtaining higher figures of merit for operation at and near room temperature. Accomplishments of the program thus far include development of an algorithm to estimate the heat extracted by, and the maximum temperature drop produced by, a thermoelectric device; solution of the problem of exchange of heat between a thermoelectric cooler and a water-cooled copper block; retrofitting of a vacuum chamber for depositing materials by sputtering; design of masks; and fabrication of multilayer thermoelectric devices of two different designs, denoted I and II. For both the I and II designs, the thicknesses of layers are of the order of nanometers. In devices of design I, nonconsecutive semiconductor layers are electrically connected in series. Devices of design II contain superlattices comprising alternating electron

  18. Fabrication and characterization of thin-film transistor materials and devices

    NASA Astrophysics Data System (ADS)

    Hong, David

    A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d 10ns0 (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers via reactive sputtering from a metal target, and the characterization of indium gallium zinc oxide (IGZO)-based TFTs utilizing various insulator materials as the gate dielectric. The first topic involves the deposition of oxide semiconductor layers via reactive sputtering from a metal target. Two oxide semiconductors are utilized for fabricating TFTs via reactive sputtering from a metal target: zinc oxide and zinc tin oxide. With optimized processing parameters, zinc oxide and zinc tin oxide via this deposition method exhibit similar characteristics to TFTs fabricated via sputtering from a ceramic target. Additionally the effects of gate capacitance density and gate dielectric material are explored utilizing TFTs with IGZO as the semiconductor layers. IGZO-based TFTs exhibit ideal behavior with improved TFT performance such as higher current drive at a given overvoltage, a decrease in the subthreshold swing, and a decrease in the magnitude of the turn-on voltage. Additionally it is shown that silicon dioxide is the preferred dielectric material, with silicon nitride a poor choice for oxide-based TFTs. Finally a simple method to characterize the band tail state distribution near the conduction band minimum of a semiconductor by analyzing two-terminal current-voltage characteristics of a TFT with a floating gate is presented. The characteristics trap energy (ET) as a function of post-deposition annealing temperature is shown to correlate very well with IGZO TFT performance, with a lower value of E T, corresponding to a more abrupt distribution of band tail states, correlating with improved TFT mobility

  19. Polymer Thermoelectric Generators: Device Considerations

    NASA Astrophysics Data System (ADS)

    Yee, Shannon

    2014-03-01

    Recent control of the transport properties in polymers has encouraged the development of polymer thermoelectric (TE) devices. Polymer TEs are thought to be less expensive and more scalable than their inorganic counterparts. The cost of the raw material is less and polymer TEs can leverage the large areal manufacturing technique established by the plastics industry. Additionally, while the overall ZT of polymer TEs appears attractive, individual polymer properties have a very different scale than their inorganic counterparts (i.e., the thermal conductivity and electrical conductivity are approximately one and two orders of magnitude smaller, respectively). Furthermore, the majority of TE measurements on polymers have been limited to thin-films where traditional TE materials are measured in bulk. So why should it be expected that polymer TE devices resemble traditional TE devices? Given the uniqueness of polymers, different device architectures are proposed that can leverage the unique strengths of polymer films. It will be shown that by logically considering device requirements, new polymer TE devices have non-linear features that are more attractive than linear inorganic TE devices. This leads to very different device optimizations that favor polymer TEs.

  20. OLED devices with internal outcoupling

    DOEpatents

    Liu, Jie Jerry; Sista, Srinivas Prasad; Shi, Xiaolei; Zhao, Ri-An; Chichak, Kelly Scott; Youmans, Jeffrey Michael; Janora, Kevin Henry; Turner, Larry Gene

    2015-03-03

    Optoelectronic devices that have enhanced internal outcoupling are disclosed. The devices include a substrate, an anode, a cathode, an electroluminescent layer, and a hole injecting layer. The hole injecting layer includes inorganic nanoparticles that have a bimodal particle size distribution and which are dispersed in an organic matrix.

  1. Nano Sensing Devices - Future Directions

    NASA Astrophysics Data System (ADS)

    Savage, Nora

    Nanotechnology offers tremendous opportunities for developing sensing and monitoring devices that are small and inexpensive with rapid response time of multiple analyte detection. In addition, there is the potential for these sensors to have "smart" or active capabilities embedded in them. These devices can help meet critical challenges identified in the environmental, occupational, biological and national security areas.

  2. Electrical latching of microelectromechanical devices

    DOEpatents

    Garcia, Ernest J.; Sleefe, Gerard E.

    2004-11-02

    Methods are disclosed for row and column addressing of an array of microelectromechanical (MEM) devices. The methods of the present invention are applicable to MEM micromirrors or memory elements and allow the MEM array to be programmed and maintained latched in a programmed state with a voltage that is generally lower than the voltage required for electrostatically switching the MEM devices.

  3. A Device with Learning Capability.

    ERIC Educational Resources Information Center

    Sotina, N. M.; Burlai, Yu. P.

    The invention involves a device with learning capacity which contains input, storage, arithmetic and output units. In order to increase the number of recognizable patterns, facilitate replacement of one pattern by another, and also increase the speed of the device, the memory unit for the input field is connected to memory units for storage of…

  4. Nanoscale wicking methods and devices

    NASA Technical Reports Server (NTRS)

    Zhou, Jijie (Inventor); Bronikowski, Michael (Inventor); Noca, Flavio (Inventor); Sansom, Elijah B. (Inventor)

    2011-01-01

    A fluid transport method and fluid transport device are disclosed. Nanoscale fibers disposed in a patterned configuration allow transport of a fluid in absence of an external power source. The device may include two or more fluid transport components having different fluid transport efficiencies. The components may be separated by additional fluid transport components, to control fluid flow.

  5. Dynamic-reservoir lubricating device

    NASA Technical Reports Server (NTRS)

    Ficken, W. H.; Schulien, H. E.

    1968-01-01

    Dynamic-reservoir lubricating device supplies controlled amounts of lubricating oil to ball bearings during operation of the bearings. The dynamic reservoir lubricating device includes a rotating reservoir nut, a hollow cylinder filled with lubricating oil, flow restrictors and a ball bearing retainer.

  6. Insertion device vacuum system designs

    SciTech Connect

    Hoyer, E.

    1988-05-01

    Synchrotron light source insertion device vacuum systems now in operation and systems proposed for the future are reviewed. An overview of insertion devices is given and four generic vacuum chamber designs, transition section design and pumping considerations are discussed. Examples of vacuum chamber systems are presented.

  7. Micromachined devices for interfacing neurons

    NASA Astrophysics Data System (ADS)

    Stieglitz, Thomas; Beutel, Hansjoerg; Blau, Cornelia; Meyer, Joerg-Uwe

    1998-07-01

    Micromachining technologies were established to fabricate microelectrode arrays and devices for interfacing parts of the central or peripheral nervous system. The devices were part of a neural prosthesis that allows simultaneous multichannel recording and multisite stimulation of neurons. Overcoming the brittle mechanics of silicon devices and challenging housing demands close to the nerve we established a process technology to fabricate light-weighted and highly flexible polyimide based devices. Platinum and iridium thin-film electrodes were embedded in the polyimide. With reactive ion etching we got the possibility to simply integrate interconnections and to form nearly arbitrary outer shapes of the devices. We designed multichannel devices with up to 24 electrodes in the shape of plates, hooks and cuffs for different applications. In vitro tests exhibited stable electrode properties and no cytotoxicity of the materials and the devices. Sieve electrodes were chronically implanted in rats to interface the regenerating sciatic nerve. After six months, recordings and stimulation of the nerve via electrodes on the micro-device proved functional reinnervation of the limb. Concentric circular structures were designed for a retina implant for the blind. In preliminary studies in rabbits, evoked potentials in the visual cortex corresponded to stimulation sites of the implant.

  8. Laser activated MTOS microwave device

    NASA Technical Reports Server (NTRS)

    Maserjian, J. (Inventor)

    1985-01-01

    A light-activated semiconductor device usable as an optoelectronic switch, pulse generator or optical detector is provided. A semiconductor device is disclosed which provides back-to-back metal-thin oxide-silicon (MTOS) capacitors. Each capacitor includes a thin, light-absorptive aluminum electrode which overlies a thin oxide layer and a lightly doped region implanted in an intrinsic silicon substrate.

  9. SAW-Modulated Image Device

    NASA Technical Reports Server (NTRS)

    Benz, H. F.

    1985-01-01

    Imaging device uses surface-acoustic-wave (SAW) charge transfer for image readout. Spatial resolution of image changed electronically by changing frequency of applied signal. Surface acoustic waves create traveling longitudinal electric fields. These fields create potential wells that carry along stored charges. Charges injected into wells by photoelectric conversion when light strikes device.

  10. A Simple Audio Conductivity Device.

    ERIC Educational Resources Information Center

    Berenato, Gregory; Maynard, David F.

    1997-01-01

    Describes a simple audio conductivity device built to address the problem of the lack of sensitivity needed to measure small differences in conductivity in crude conductivity devices. Uses a 9-V battery as a power supply and allows the relative resistance differences between substances to be detected by the frequency of its audible tones. Presents…

  11. Ventricular assist devices in pediatrics

    PubMed Central

    Fuchs, A; Netz, H

    2001-01-01

    The implantation of a mechanical circulatory device for end-stage ventricular failure is a possible therapeutic approach in adult and pediatric cardiac surgery and cardiology. The aim of this article is to present mechanical circulatory assist devices used in infants and children with special emphasis on extracorporeal membrane oxygenation, Berlin Heart assist device, centrifugal pump and Medos assist device. The success of long-term support with implantable ventricular assist devices in adults and children has led to their increasing use as a bridge to transplantation in patients with otherwise non-treatable left ventricular failure, by transforming a terminal phase heart condition into a treatable cardiopathy. Such therapy allows rehabilitation of patients before elective cardiac transplantation (by removing contraindications to transplantation mainly represented by organ impairment) or acting as a bridge to recovery of the native left ventricular function (depending on underlying cardiac disease). Treatment may also involve permanent device implantation when cardiac transplantation is contraindicated. Indications for the implantation of assisted circulation include all states of cardiac failure that are reversible within a variable period of time or that require heart transplantation. This article will address the current status of ventricular assist devices by examining historical aspects of its development, current technical issues and clinical features of pediatric ventricular assist devices, including indications and contraindications for support. PMID:22368605

  12. Ergonomic material-handling device

    DOEpatents

    Barsnick, Lance E.; Zalk, David M.; Perry, Catherine M.; Biggs, Terry; Tageson, Robert E.

    2004-08-24

    A hand-held ergonomic material-handling device capable of moving heavy objects, such as large waste containers and other large objects requiring mechanical assistance. The ergonomic material-handling device can be used with neutral postures of the back, shoulders, wrists and knees, thereby reducing potential injury to the user. The device involves two key features: 1) gives the user the ability to adjust the height of the handles of the device to ergonomically fit the needs of the user's back, wrists and shoulders; and 2) has a rounded handlebar shape, as well as the size and configuration of the handles which keep the user's wrists in a neutral posture during manipulation of the device.

  13. Triboluminescent tamper-indicating device

    DOEpatents

    Johnston, Roger G.; Garcia, Anthony R. E.

    2002-01-01

    A tamper-indicating device is described. The device has a transparent or translucent cylindrical body that includes triboluminescent material, and an outer opaque layer that prevents ambient light from entering. A chamber in the body holds an undeveloped piece of photographic film bearing an image. The device is assembled from two body members. One of the body members includes a recess for storing film and an optical assembly that can be adjusted to prevent light from passing through the assembly and exposing the film. To use the device with a hasp, the body members are positioned on opposite sides of a hasp, inserted through the hasp, and attached. The optical assembly is then manipulated to allow any light generated from the triboluminescent materials during a tampering activity that damages the device to reach the film and destroy the image on the film.

  14. Pyrotechnic devices and their applications

    NASA Astrophysics Data System (ADS)

    Himelblau, Harry

    2002-05-01

    Pyroshock is mechanical shock transmitted through structures from explosive devices, sometimes accompanied by structural impact. These devices are designed to cause the intentional separation of structures, or to cause the deployment of various mechanisms or subsystems required for mission operation. Separation devices usually fall into two categories: (a) line sources, such as linear shaped charges, and (b) point sources, such as explosive bolts, pin puller and pushers, and gas generators. The advantages of these devices are high reliability (especially when redundantly activated), low cost and weight, high activation speed, and low structural deformation a short distance from the source. The major limitation is pyroshock, a severe high-frequency transient capable of causing failure or malfunction to small nearby elements, especially electronic and optical components located close to the source. This pyroshock tutorial, which is intended to summarize recent improvements to the technology, is initiated with a review of explosive and companion devices.

  15. Impacting device for testing insulation

    NASA Technical Reports Server (NTRS)

    Redmon, J. W. (Inventor)

    1984-01-01

    An electro-mechanical impacting device for testing the bonding of foam insulation to metal is descirbed. The device lightly impacts foam insulation attached to metal to determine whether the insulation is properly bonded to the metal and to determine the quality of the bond. A force measuring device, preferably a load cell mounted on the impacting device, measures the force of the impact and the duration of the time the hammer head is actually in contact with the insulation. The impactor is designed in the form of a handgun having a driving spring which can propel a plunger forward to cause a hammer head to impact the insulation. The device utilizes a trigger mechanism which provides precise adjustements, allowing fireproof operation.

  16. Stretchable and wearable electrochromic devices.

    PubMed

    Yan, Chaoyi; Kang, Wenbin; Wang, Jiangxin; Cui, Mengqi; Wang, Xu; Foo, Ce Yao; Chee, Kenji Jianzhi; Lee, Pooi See

    2014-01-28

    Stretchable and wearable WO3 electrochromic devices on silver nanowire (AgNW) elastic conductors are reported. The stretchable devices are mechanically robust and can be stretched, twisted, folded, and crumpled without performance failure. Fast coloration (1 s) and bleaching (4 s) time and good cyclic stability (81% retention after 100 cycles) were achieved at relaxed state. Proper functioning at stretched state (50% strain) was also demonstrated. The electrochromic devices were successfully implanted onto textile substrates for potential wearable applications. As most existing electrochromic devices are based on rigid technologies, the innovative devices in their soft form hold the promise for next-generation electronics such as stretchable, wearable, and implantable display applications. PMID:24359017

  17. Optical device for straightness measurement

    NASA Astrophysics Data System (ADS)

    Vekteris, Vladas; Jurevicius, Mindaugas; Turla, Vytautas

    2015-11-01

    The present paper describes the research of the optical device for two-dimensional straightness measurement of technological machines. Mathematical study of an optical device, operating on the phase principle and measuring transversal displacements of machine parts in two directions ( X and Y) during their linear longitudinal motion in a machine (alongside the Z axis), is presented. How to estimate the range of travel along the Z axis is analytically shown. At this range, the measurer gives correct measurements of transverse displacement. The necessary distance from the objective focus to the image plane was defined mathematically. The sample results of measuring the displacement of the table of a technological machine by using the optical device are presented in the paper. This optical device for non-contact straightness measurement can be used for measurement straightness in turning, milling, drilling, grinding machines and other technological machines, also in geodesy and cartography, and for moving accuracy testing of mechatronic devices, robotics and others.

  18. Automatic Mechetronic Wheel Light Device

    DOEpatents

    Khan, Mohammed John Fitzgerald

    2004-09-14

    A wheel lighting device for illuminating a wheel of a vehicle to increase safety and enhance aesthetics. The device produces the appearance of a "ring of light" on a vehicle's wheels as the vehicle moves. The "ring of light" can automatically change in color and/or brightness according to a vehicle's speed, acceleration, jerk, selection of transmission gears, and/or engine speed. The device provides auxiliary indicator lights by producing light in conjunction with a vehicle's turn signals, hazard lights, alarm systems, and etc. The device comprises a combination of mechanical and electronic components and can be placed on the outer or inner surface of a wheel or made integral to a wheel or wheel cover. The device can be configured for all vehicle types, and is electrically powered by a vehicle's electrical system and/or battery.

  19. Wound Healing Devices Brief Vignettes

    PubMed Central

    Anderson, Caesar A.; Hare, Marc A.; Perdrizet, George A.

    2016-01-01

    Significance: The demand for wound care therapies is increasing. New wound care products and devices are marketed at a dizzying rate. Practitioners must make informed decisions about the use of medical devices for wound healing therapy. This paper provides updated evidence and recommendations based on a review of recent publications. Recent Advances: The published literature on the use of medical devices for wound healing continues to support the use of hyperbaric oxygen therapy, negative pressure wound therapy, and most recently electrical stimulation. Critical Issue: To inform wound healing practitioners of the evidence for or against the use of medical devices for wound healing. This information will aid the practitioner in deciding which technology should be accepted or rejected for clinical use. Future Directions: To produce high quality, randomized controlled trials or acquire outcome-based registry databases to further test and improve the knowledge base as it relates to the use of medical devices in wound care. PMID:27076996

  20. Advanced Modeling of Micromirror Devices

    NASA Technical Reports Server (NTRS)

    Michalicek, M. Adrian; Sene, Darren E.; Bright, Victor M.

    1995-01-01

    The flexure-beam micromirror device (FBMD) is a phase only piston style spatial light modulator demonstrating properties which can be used for phase adaptive corrective optics. This paper presents a complete study of a square FBMD, from advanced model development through final device testing and model verification. The model relates the electrical and mechanical properties of the device by equating the electrostatic force of a parallel-plate capacitor with the counter-acting spring force of the device's support flexures. The capacitor solution is derived via the Schwartz-Christoffel transformation such that the final solution accounts for non-ideal electric fields. The complete model describes the behavior of any piston-style device, given its design geometry and material properties. It includes operational parameters such as drive frequency and temperature, as well as fringing effects, mirror surface deformations, and cross-talk from neighboring devices. The steps taken to develop this model can be applied to other micromirrors, such as the cantilever and torsion-beam designs, to produce an advanced model for any given device. The micromirror devices studied in this paper were commercially fabricated in a surface micromachining process. A microscope-based laser interferometer is used to test the device in which a beam reflected from the device modulates a fixed reference beam. The mirror displacement is determined from the relative phase which generates a continuous set of data for each selected position on the mirror surface. Plots of this data describe the localized deflection as a function of drive voltage.