Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Asif Khan, M.; Skogman, R. A.; Van Hove, J. M.; Olson, D. T.; Kuznia, J. N.

1992-03-01

In this letter we report the first switched atomic layer epitaxy (SALE) of single crystal GaN over basal plane sapphire substrates. A low pressure metalorganic chemical vapor deposition (LPMOCVD) system was used for the epilayer depositions. In contrast to conventional LPMOCVD requiring temperatures higher than 700 °C, the SALE process resulted in single crystal insulating GaN layers at growth temperatures ranging from 900 to 450 °C. The band-edge transmission and the photoluminescence of the films from the SALE process were comparable to the best LPMOCVD films. To the best of our knowledge this is the first report of insulating GaN films which show excellent band-edge photoluminescence.

Ion Beam Assisted Deposition of Thin Epitaxial GaN Films.

PubMed

Rauschenbach, Bernd; Lotnyk, Andriy; Neumann, Lena; Poppitz, David; Gerlach, Jürgen W

2017-06-23

The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy <100 eV) is capable to modify the characteristics of the growing film without generating a large number of irradiation induced defects. The nitrogen ion beam assisted molecular beam epitaxy (ion energy <25 eV) is used to deposit GaN thin films on (0001)-oriented 6H-SiC substrates at 700 °C. The films are studied in situ by reflection high energy electron diffraction, ex situ by X-ray diffraction, scanning tunnelling microscopy, and high-resolution transmission electron microscopy. It is demonstrated that the film growth mode can be controlled by varying the ion to atom ratio, where 2D films are characterized by a smooth topography, a high crystalline quality, low biaxial stress, and low defect density. Typical structural defects in the GaN thin films were identified as basal plane stacking faults, low-angle grain boundaries forming between w-GaN and z-GaN and twin boundaries. The misfit strain between the GaN thin films and substrates is relieved by the generation of edge dislocations in the first and second monolayers of GaN thin films and of misfit interfacial dislocations. It can be demonstrated that the low-energy nitrogen ion assisted molecular beam epitaxy is a technique to produce thin GaN films of high crystalline quality.

Growth of non-polar and semi-polar gallium nitride with plasma assisted molecular beam epitaxy: Relatonships between film microstructure, reciprocal lattice and transport properties

NASA Astrophysics Data System (ADS)

McLaurin, Melvin Barker

2007-12-01

The group-III nitrides exhibit significant spontaneous and piezoelectric polarization parallel to the [0001] direction, which are manifested as sheet charges at heterointerfaces. While polarization can be used to engineer the band-structure of a device, internal electric fields generated by polarization discontinuities can also have a number of negative consequences for the performance and design of structures utilizing heterojunctions. The most direct route to polarization free group-III nitride devices is growth on either one of the "non-polar" prismatic faces of the crystal (m-plane (1010) or a-plane (1120)) where the [0001] direction lies in the plane of any heterointerfaces. This dissertation focuses on the growth of non-polar and semi-polar GaN by MBE and on how the dominant feature of the defect structure of non-polar and semi-polar films, basal plane stacking faults, determines the properties of the reciprocal lattice and electrical transport of the films. The first part is a survey of the MBE growth of the two non-polar planes (10 10) and (1120) and three semi-polar planes (1011), (1013) and {11 22} investigated in this work. The relationship between basal plane stacking faults and broadening of the reciprocal lattice is discussed and measured with X-ray diffraction using a lateral-variant of the Williamson-Hall analysis. The electrical properties of m-plane films are investigated using Hall-effect and TLM measurements. Anisotropic mobilities were observed for both electrons and holes along with record p-type conductivities and hole concentrations. By comparison to both inversion-domain free c-plane films and stacking-fault-free free-standing m-plane GaN wafers it was determined that basal plane stacking faults were the source of both the enhanced p-type conductivity and the anisotropic carrier mobilities. Finally, we propose a possible source of anisotropic mobilities and enhanced p-type conduction in faulted films is proposed. Basal plane stacking faults are treated as heterostructures of the wurtzite and zincblende polytypes of GaN. The band parameter and polarization differences between the polytypes result in large offsets in both the conduction and valence band edges at the stacking faults. Anisotropy results from scattering from the band-edge offsets and enhanced mobility from screening due to charge accumulation at these band edge offsets.

Local electronic and optical behaviors of a-plane GaN grown via epitaxial lateral overgrowth

NASA Astrophysics Data System (ADS)

Moore, J. C.; Kasliwal, V.; Baski, A. A.; Ni, X.; Özgür, Ü.; Morkoç, H.

2007-01-01

Conductive atomic force microscopy and near-field optical microscopy (NSOM) were used to study the morphology, conduction, and optical properties of a-plane GaN films grown via epitaxial lateral overgrowth (ELO) by metal organic chemical vapor deposition. The AFM images for the coalesced ELO films show undulations, where the window regions appear as depressions with a high density of surface pits. At reverse bias below 12V, very low uniform conduction (2pA) is seen in the window regions. Above 20V, a lower-quality sample shows localized sites inside the window regions with significant leakage, indicating a correlation between the presence of surface pits and leakage sites. Room temperature NSOM studies explicitly showed enhanced optical quality in the wing regions of the overgrown GaN due to a reduced density of dislocations, with the wings and the windows clearly discernible from near-field photoluminescence mapping.

Luminescence studies of laser MBE grown GaN on ZnO nanostructures

NASA Astrophysics Data System (ADS)

Dewan, Sheetal; Tomar, Monika; Kapoor, Ashok K.; Tandon, R. P.; Gupta, Vinay

2017-08-01

GaN films have been successfully fabricated using Laser Molecular Beam Epitaxy (LMBE) technique on bare c-plane sapphire substrate and ZnO nanostructures (NS) decorated Si (100) substrates. The ZnO nanostructures were grown on Si (100) substrate using high pressure assisted Pulsed laser deposition technique in inert gas ambience. Discrete nanostructured morphology of ZnO was obtained using the PLD growth on Si substrates. Photoluminescence studies performed on the prepared GaN/Sapphire and GaN/ZnO-NS/Si systems, revealed a significant PL enhancement in case of GaN/ZnO-NS/Si system compared to the former. The hexagonal nucleation sites provided by the ZnO nanostructures strategically enhanced the emission of GaN film grown by Laser MBE Technique at relatively lower temperature of 700°C. The obtained results are attractive for the realization of highly luminescent GaN films on Si substrate for photonic devices.

Room-temperature optically pumped laser emission from a-plane GaN with high optical gain characteristics

NASA Astrophysics Data System (ADS)

Kuokstis, E.; Chen, C. Q.; Yang, J. W.; Shatalov, M.; Gaevski, M. E.; Adivarahan, V.; Khan, M. Asif

2004-04-01

Photoluminescence (PL) and optical gain (OG) spectra of a-plane GaN layers have been analyzed over a wide range of excitation intensities. The samples were fully coalesced layers grown by metalorganic chemical vapor deposition over r-plane sapphire substrates using epitaxial layer overgrowth (ELOG) and selective area lateral epitaxy (SALE) procedures. ELOG and SALE a-plane samples showed a strong stimulated emission line in backscattering-geometry PL spectra along with extremely high OG coefficient values (in SALE samples more than 2000 cm-1). Structures prepared with natural cleaved facet cavities based on these films were used to demonstrate optically pumped room-temperature lasing.

MOCVD growth of gallium nitride with indium surfactant

NASA Astrophysics Data System (ADS)

Won, Dong Jin

In this thesis research, the effect of indium surfactant on Ga-polar and N-polar GaN films grown at 950 °C by MOCVD on various substrates such as Si-face SiC, bulk GaN, Si(111), and C-face SiC was studied to investigate the stress relaxation mechanism, structural, and optical properties of GaN films which were modified by the indium surfactant. The effect of indium surfactant on GaN films grown on SiC was studied first. In the 1.8 microm thick Ga-polar GaN films grown on lattice-mismatched Si-face SiC substrates utilizing indium surfactant at 950 °C, inverted hexagonal pyramid surface defects, so-called V-defects which consist of six (1011) planes, formed at threading dislocations on the GaN surface, which gave rise to the relaxation of compressive misfit stress in an elastic way. Simultaneously, enhanced surface mobility of Ga and N adatoms with indium surfactant lead to improved 2D growth, which may be contradictory to the formation of surface defects like V-defects. In order to find the driving force for V-defect formation in the presence of indium, a nucleation and growth model was developed, taking into consideration the strain, surface, and dislocation energies modified by indium surfactant. This model found that the V-defect formation can be energetically preferred since indium reduces the surface energy of the (1011) plane, which gives rise to the V-defect formation and growth that can overcome the energy barrier at the critical radius of the V-defect. These Ga-polar GaN films were found to be unintentionally doped with Si. Thus, an investigation into the effect of intentional Si doping at a constant TMIn flow rate on GaN films was also performed. Si turned out to be another important factor in the generation of V-defects because Si may be captured at the threading dislocation cores by forming Si -- N bonds, acting as a mask to locally prevent GaN growth. This behavior appeared to assist the initiation of the V-defect which enables V-defects to easily grow beyond the critical radius. Thus, introduction of indium surfactant and Si doping was found to be the most favorable conditions for V-defect formation in Ga-polar GaN films grown on Si-face SiC substrates. The nucleation and growth model predicted that V-defects may not form in homoepitaxy because the energy barrier for V-defect formation approaches infinity due to zero misfit stress. When indium surfactant and Si dopant were introduced simultaneously during the homoepitaxial growth, V-defects did not form in 1.8 microm thick Ga-polar GaN films grown at 950 °C on bulk GaN that had very low threading dislocation density, as predicted by the nucleation and growth model. Ga-polar GaN films grown on Si(111) substrates using indium surfactant showed that additional tensile stress was induced by indium with respect to the reference GaN. Since cracking is known to be a stress relaxation mechanism for tension, the In-induced additional tensile stress is thus detrimental to the GaN films which experience the tensile thermal stress associated with the difference in coefficient of thermal expansion between GaN and the substrate during cooling after growth. The generation of tensile stress by indium seemed correlated with a reduction of V-defects since a high density of V-defects formed under the initial compressive stress at the GaN nucleation stage and then V-defect density decreased as the film grew. Even though the initial misfit stress of the GaN film grown on Si(111) was lower than that of GaN grown on SiC, a high density of V-defects were created under the initial compressive stress. Therefore, the high density of threading dislocations was believed to strongly drive the V-defect formation under In-rich conditions. Consequently, without using high quality bulk GaN substrates, V-defects could not be avoided in Ga-polar GaN films grown on foreign substrates such as Si-face SiC and Si(111) in the presence of indium surfactant and Si dopants during growth. Thus, N-polar GaN films were investigated using vicinal C-face SiC substrates because a theoretical study utilizing first-principles calculations predicted that V-defects are not energetically favored on the N-face GaN. When indium surfactant and Si doping were used during N-polar GaN growth, V-defects did not form, as predicted by theory. This observation suggests that V-defect free N-polar InGaN alloys also can be achieved, which may enable stable green laser diodes with long lifetime to be fabricated using the high indium composition N-polar InGaN films. (Abstract shortened by UMI.)

High brightness nonpolar a-plane (11-20) GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Jung, Sukkoo; Chang, Younghak; Bang, Kyu-Hyun; Kim, Hyung-Gu; Choi, Yoon-Ho; Hwang, Sung-Min; Baik, Kwang Hyeon

2012-02-01

We report on high brightness nonpolar a-plane InGaN/GaN LEDs using patterned lateral overgrowth (PLOG) epitaxy. High crystal-quality and smooth surfaces for a-plane GaN (a-GaN) films were achieved using PLOG with an array of hexagonal SiO2 patterns. The XRC FWHMs of as-grown PLOG a-GaN films were found to be 414 and 317 arcsec (450 and 455 arcsec for planar a-GaN films) along the c-axis and m-axis directions, respectively. Plan-view CL clearly reveals the periodic hexagonal patterns with higher band edge emission intensity, implying that the luminescence properties of a-GaN films lying above the SiO2 mask are improved. The light output powers of a-InGaN/GaN PLOG LEDs were measured to be 7.5 mW and 20 mW at drive currents of 20 mA and 100 mA, respectively. A negligible blue-shift was observed in the peak emission wavelength with increasing drive current up to 100 mA, indicating that there are no strong internal fields in nonpolar a-InGaN/GaN LEDs. We believe that nonpolar a-plane InGaN/GaN LEDs hold promise for efficient nitride emitters if the growth conditions are further optimized.

Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN.

PubMed

Jang, Dongsoo; Jue, Miyeon; Kim, Donghoi; Kim, Hwa Seob; Lee, Hyunkyu; Kim, Chinkyo

2018-03-07

On an SiO 2 -patterned c-plane sapphire substrate, GaN domains were grown with their polarity controlled in accordance with the pattern. While N-polar GaN was grown on hexagonally arranged circular openings, Ga-polar GaN was laterally overgrown on mask regions due to polarity inversion occurring at the boundary of the circular openings. After etching of N-polar GaN on the circular openings by H 3 PO 4 , this template was coated with 40-nm Si by sputtering and was slightly etched by KOH. After slight etching, a thin layer of Si left on the circular openings of sapphire,but not on GaN, was oxidized during thermal annealing and served as a dielectric mask during subsequent regrowth. Thus, the subsequent growth of GaN was made only on the existing Ga-polar GaN domains, not on the circular openings of the sapphire substrate. Transmission electron microscopy analysis revealed no sign of threading dislocations in this film. This approach may help fabricating an unholed and merged GaN film physically attached to but epitaxially separated from the SiO 2 -patterned sapphire.

New PLAD apparatus and fabrication of epitaxial films and junctions of functional materials: SiC, GaN, ZnO, diamond and GMR layers

NASA Astrophysics Data System (ADS)

Muto, Hachizo; Kusumori, Takeshi; Nakamura, Toshiyuki; Asano, Takashi; Hori, Takahiro

2006-04-01

We have developed a new pulsed laser ablation-deposition (PLAD) apparatus and techniques for fabricating films of high-temperature or functional materials, including two short-wavelength lasers: (a) a YAG 5th harmonic (213 nm) and (b) Raman-shifted lasers containing vacuum ultraviolet light; also involved are (c) a high-temperature heater with a maximum temperature of 1350 °C, (d) dual-target simultaneous ablation mechanics, and (e) hybrid PLAD using a pico-second YAG laser combined with (c) and/or (d). Using the high-T heater, hetero-epitaxial films of 3C-, 2H- and 4H-SiC have been prepared on sapphire-c. In situ p-doping for GaN epitaxial films is achieved by simultaneous ablation of GaN and Mg targets by (d) during film growth. Junctions such as pGaN (Mg-doped)-film/n-SiC(0 0 0 1) substrate and pGaN/n-Si(1 1 1) show good diode characteristics. Epitaxial films with a diamond lattice can be grown on the sapphire-c plane by hybrid PLAD (e) with a high-T heater using a 6H-SiC target. High quality epitaxial films of ZnO are grown by PLAD by introducing a low-temperature self-buffer layer; magnetization of ferromagnetic materials is enforced by overlaying on a ferromagnetic lattice plane of an anti-ferromagnetic material, showing the value of the layer-overlaying method in improving quality. The short-wavelength lasers are useful in reducing surface particles on functional films, including superconductors.

Efficient reduction of defects in (1120) non-polar and (1122) semi-polar GaN grown on nanorod templates

NASA Astrophysics Data System (ADS)

Bai, J.; Gong, Y.; Xing, K.; Yu, X.; Wang, T.

2013-03-01

(1120) non-polar and (1122) semi-polar GaNs with a low defect density have been achieved by means of an overgrowth on nanorod templates, where a quick coalescence with a thickness even below 1 μm occurs. On-axis and off-axis X-ray rocking curve measurements have shown a massive reduction in the linewidth for our overgrown GaN in comparison with standard GaN films grown on sapphire substrates. Transmission electron microscope observation demonstrates that the overgrowth on the nanorod templates takes advantage of an omni-directional growth around the sidewalls of the nanostructures. The dislocations redirect in basal planes during the overgrowth, leading to their annihilation and termination at voids formed due to a large lateral growth rate. In the non-polar GaN, the priority <0001> lateral growth from vertical sidewalls of nanorods allows basal plane stacking faults (BSFs) to be blocked in the nanorod gaps; while for semi-polar GaN, the propagation of BSFs starts to be impeded when the growth front is changed to be along inclined <0001> direction above the nanorods.

Polarized edge emission from GaN-based light-emitting diodes sandwiched by dielectric/metal hybrid reflectors

NASA Astrophysics Data System (ADS)

Yan, L. J.; Sheu, J. K.; Huang, F. W.; Lee, M. L.

2010-12-01

Edge-emitting c-plane GaN/sapphire-based light-emitting diodes (LEDs) sandwiched by two dielectric/metal hybrid reflectors on both sapphire and GaN surfaces were studied to determine their light emission polarization. The hybrid reflectors comprised dielectric multiple thin films and a metal layer. The metal layers of Au or Ag used in this study were designed to enhance the polarization ratio from S-polarization (transverse electric wave, TE) to P-polarization (transverse magnetic wave, TM). The two sets of optimized dielectric multi thin films served as matching layers for wide-angle incident light on both sapphire and GaN surfaces. To determine which reflector scheme would achieve a higher polarization ratio, simulations of the reflectance at the hybrid reflectors on sapphire (or GaN) interface were performed before the fabrication of experimental LEDs. Compared with conventional c-plane InGaN/GaN/sapphire LEDs without dielectric/metal hybrid reflectors, the experimental LEDs exhibited higher polarization ratio (ITE-max/ITM-max) with r=2.174 (˜3.37 dB) at a wavelength of 460 nm. In contrast, the original polarized light (without dielectric/metal hybrid reflectors) was partially contributed (r=1.398) by C-HH or C-LH (C band to the heavy-hole sub-band or C band to the crystal-field split-off sub-band) transitions along the a-plane or m-plane direction.

An atomistic mechanism study of GaN step-flow growth in vicinal m-plane orientations

DOE PAGES

Liu, Zhun; Wang, Ru-Zhi; Zapol, Peter

2016-10-12

We present elucidation of homoepitaxial growth mechanisms on vicinal non-polar surfaces of GaN that is highly important for gaining an understanding of and control thin film surface morphology and properties. Using first-principles calculations, we study the step-flow growth in m-plane GaN based on atomic row nucleation and kink propagation kinetics. Ga–N dimer adsorption onto the m-plane is energetically more favorable than that of Ga and N isolated adatoms. Therefore, we have treated the dimers as the dominant growth species attached to the step edges. By calculating the free energies of sequentially attached Ga–N dimers, we have elucidated that the a-stepmore » edge kink growth proceeds by parallel attachment rather than by across the step edge approach. We found a series of favorable configurations of kink propagation and calculated the free energy and nucleation barriers for kink evolution on five types of step edges (a, +c, -c, +a + c, and -a - c). By changing the chemical potential μGa and the excess chemical potential Δμ, the growth velocities at the five types of edges are controlled by the corresponding kink pair nucleation barrier E* in their free energy profiles. To explore the kink-flow growth instability observed at different Ga/N flux ratios, calculations of kink pairs on the incompact -c and +c-step edges are further performed to study their formation energies. Variations of these step edge morphologies with a tuned chemical environment are consistent with previous experimental observations, including stable diagonal ±a ± c-direction steps. In conclusion, our work provides a first-principles approach to explore step growth and surface morphology of the vicinal m-plane GaN, which is applicable to analyze and control the step-flow growth of other binary thin films.« less

In-Plane Anisotropic Photoconduction in Nonpolar Epitaxial a-Plane GaN.

PubMed

Pant, Rohit; Shetty, Arjun; Chandan, Greeshma; Roul, Basanta; Nanda, K K; Krupanidhi, S B

2018-05-16

Nonpolar a-plane GaN epitaxial films were grown on an r-plane sapphire using the plasma-assisted molecular beam epitaxy system, with various nitrogen plasma power conditions. The crystallinity of the films was characterized by high-resolution X-ray diffraction and reciprocal space mapping. Using the X-ray "rocking curve-phi scan", [0002], [1-100], and [1-102] azimuth angles were identified, and interdigitated electrodes along these directions were fabricated to evaluate the direction-dependent UV photoresponses. UV responsivity ( R) and internal gain ( G) were found to be dependent on the azimuth angle and in the order of [0002] > [1-102] > [1-100], which has been attributed to the enhanced crystallinity and lowest defect density along [0002] azimuth. The temporal response was very stable irrespective of growth conditions and azimuth angles. Importantly, response time, responsivity, and internal gain were 210 ms, 1.88 A W -1 , and 648.9%, respectively, even at a bias as low as 1 V. The results were validated using the Silvaco Atlas device simulator, and experimental observations were consistent with simulated results. Overall, the photoresponse is dependent on azimuth angles and requires further optimization, especially for materials with in-plane crystal anisotropy.

Efficient reduction of defects in (1120) non-polar and (1122) semi-polar GaN grown on nanorod templates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bai, J.; Gong, Y.; Xing, K.

2013-03-11

(1120) non-polar and (1122) semi-polar GaNs with a low defect density have been achieved by means of an overgrowth on nanorod templates, where a quick coalescence with a thickness even below 1 {mu}m occurs. On-axis and off-axis X-ray rocking curve measurements have shown a massive reduction in the linewidth for our overgrown GaN in comparison with standard GaN films grown on sapphire substrates. Transmission electron microscope observation demonstrates that the overgrowth on the nanorod templates takes advantage of an omni-directional growth around the sidewalls of the nanostructures. The dislocations redirect in basal planes during the overgrowth, leading to their annihilationmore » and termination at voids formed due to a large lateral growth rate. In the non-polar GaN, the priority <0001> lateral growth from vertical sidewalls of nanorods allows basal plane stacking faults (BSFs) to be blocked in the nanorod gaps; while for semi-polar GaN, the propagation of BSFs starts to be impeded when the growth front is changed to be along inclined <0001> direction above the nanorods.« less

Integration of (208) oriented epitaxial Hf-doped Bi4Ti3O12 with (0002) GaN using SrTiO3/TiO2 buffer layer

NASA Astrophysics Data System (ADS)

Luo, W. B.; Zhu, J.; Li, Y. R.; Wang, X. P.; Zhang, Y.

2009-05-01

Hf-doped Bi4Ti3O12 (BTH) ferroelectric films with excellent electrical properties were epitaxially integrated with GaN semiconductor using (111) SrTiO3 (STO)/rutile (200) TiO2 as buffer layer. The STO/TiO2 buffer layer was deposited by laser molecular beam epitaxy. The structural characteristics of the buffer layer were in situ and ex situ characterized by reflective high energy electron diffraction, x-ray diffraction (XRD), and high resolution transmission microscopy. The overlaying SrRuO3 (SRO) and BTH films were then deposited by pulsed laser deposition. XRD spectra, including θ-2θ and Φ scans, show that the (208) BTH films were epitaxially grown on GaN, and the BTH films inherit the in-plane twin-domain of STO buffer layer. Electrical measurements demonstrate that the non-c axis BTH films possess a large remnant polarization (2Pr=45 μC/cm2), excellent fatigue endurance (10.2% degradation after 1.1×1010 switching cycles), and a low leakage current density (1.94×10-7 A/cm2 at an electric field of 200 kV/cm). These results reveal that the (208) BTH films with favorable electrical performance could be epitaxially grown on GaN template using STO/TiO2 buffer layer.

Structural, Electrical and Optical Properties of Sputtered-Grown InN Films on ZnO Buffered Silicon, Bulk GaN, Quartz and Sapphire Substrates

NASA Astrophysics Data System (ADS)

Bashir, Umar; Hassan, Zainuriah; Ahmed, Naser M.; Afzal, Naveed

2018-05-01

Indium nitride (InN) films were grown on Si (111), bulk GaN, quartz and sapphire substrates by radio frequency magnetron sputtering. Prior to the film deposition, a zinc oxide (ZnO) buffer layer was deposited on all the substrates. The x-ray diffraction patterns of InN films on ZnO-buffered substrates indicated c-plane-oriented films whereas the Raman spectroscopy results indicated A1 (LO) and E2 (high) modes of InN on all the substrates. The crystalline quality of InN was found to be better on sapphire and quartz than on the other substrates. The surface roughness of InN was studied using an atomic force microscope. The results indicated higher surface roughness of the film on sapphire as compared to the others; however, roughness of the film was lower than 8 nm on all the substrates. The electrical properties indicated higher electron mobility of InN (20.20 cm2/Vs) on bulk GaN than on the other substrates. The optical band gap of InN film was more than 2 eV in all the cases and was attributed to high carrier concentration in the film.

Effect of V/III ratio on the surface morphology and electrical properties of m-plane (10 1 bar 0) GaN homoepitaxial layers

NASA Astrophysics Data System (ADS)

Barry, Ousmane I.; Tanaka, Atsushi; Nagamatsu, Kentaro; Bae, Si-Young; Lekhal, Kaddour; Matsushita, Junya; Deki, Manato; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi

2017-06-01

We have investigated the effect of V/III ratio on the surface morphology, impurity concentration and electrical properties of m-plane (10 1 bar 0) Gallium Nitride (GaN) homoepitaxial layers. Four-sided pyramidal hillocks are observed on the nominally on-axis m-plane GaN films. Hillocks sizes relatively increase by increasing the V/III ratio. All facets of pyramidal hillocks exhibit well-defined step-terrace features. Secondary ion mass spectrometry depth profiles reveal that carbon impurities decrease by increasing the V/III ratio while the lowest oxygen content is found at an optimized V/III ratio of 900. Vertical Schottky barrier diodes fabricated on the m-GaN samples were characterized. Low leakage current densities of the order of 10-10 A/cm2 at -5 V are obtained at the optimum V/III ratio. Oxygen impurities and screw-component dislocations around hillocks are found to have more detrimental impact on the leakage current mechanism.

Use of hydrogen etching to remove existing dislocations in GaN epitaxial layers

NASA Astrophysics Data System (ADS)

Yeh, Yen-Hsien; Chu, Chung-Ming; Wu, Yin-Hao; Hsu, Ying-Chia; Yu, Tzu-Yi; Lee, Wei-I.

2015-08-01

In this paper, based on the anisotropic nature of hydrogen (H2) etching on GaN, we describe a new approach to the removal of threading dislocations in GaN layers. The top surfaces of c-plane (Ga-face) and a-plane GaNs are considered stable in H2; therefore, H2 etches only crystal imperfections such as dislocation and basal plane stacking fault (BSF) sites. We used H2 to etch undoped c-plane GaN, n-type c-plane GaN, a-plane GaN, and an InGaN/GaN multiple quantum well structure. Several examinations were performed, indicating deep cavities on the c-plane GaN samples after H2 etching; furthermore, gorge-like grooves were observed on the a-plane GaN samples. The deep cavities on the c-plane GaN were considered the etched dislocation sites, and the gorge-like grooves on the a-plane GaN were considered the etched BSF sites. Photoluminescence measurements were performed and the results indicated that the H2-etched samples demonstrate superior optoelectronic properties, probably because of the elimination of dislocations.

Movement of basal plane dislocations in GaN during electron beam irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yakimov, E. B.; National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049; Vergeles, P. S.

The movement of basal plane segments of dislocations in low-dislocation-density GaN films grown by epitaxial lateral overgrowth as a result of irradiation with the probing beam of a scanning electron microscope was detected by means of electron beam induced current. Only a small fraction of the basal plane dislocations was susceptible to such changes and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide for dislocations pinned by two different types of pinning sites: a low-activation-energy site and a high-activation-energy site. Only dislocation segments pinned by the former sites can bemore » moved by irradiation and only until they meet the latter pinning sites.« less

In situ chemical functionalization of gallium nitride with phosphonic acid derivatives during etching.

PubMed

Wilkins, Stewart J; Greenough, Michelle; Arellano, Consuelo; Paskova, Tania; Ivanisevic, Albena

2014-03-04

In situ functionalization of polar (c plane) and nonpolar (a plane) gallium nitride (GaN) was performed by adding (3-bromopropyl) phosphonic acid or propyl phosphonic acid to a phosphoric acid etch. The target was to modulate the emission properties and oxide formation of GaN, which was explored through surface characterization with atomic force microscopy, X-ray photoelectron spectroscopy, photoluminescence (PL), inductively coupled plasma-mass spectrometry, and water contact angle. The use of (3-bromopropyl) phosphonic acid and propyl phosphonic acid in phosphoric acid demonstrated lower amounts of gallium oxide formation and greater hydrophobicity for both sample sets, while also improving PL emission of polar GaN samples. In addition to crystal orientation, growth-related factors such as defect density in bulk GaN versus thin GaN films residing on sapphire substrates were investigated as well as their responses to in situ functionalization. Thin nonpolar GaN layers were the most sensitive to etching treatments due in part to higher defect densities (stacking faults and threading dislocations), which accounts for large surface depressions. High-quality GaN (both free-standing bulk polar and bulk nonpolar) demonstrated increased sensitivity to oxide formation. Room-temperature PL stands out as an excellent technique to identify nonradiative recombination as observed in the spectra of heteroepitaxially grown GaN samples. The chemical methods applied to tune optical and physical properties of GaN provide a quantitative framework for future novel chemical and biochemical sensor development.

Large-roll growth of 25-inch hexagonal BN monolayer film for self-release buffer layer of free-standing GaN wafer

NASA Astrophysics Data System (ADS)

Wu, Chenping; Soomro, Abdul Majid; Sun, Feipeng; Wang, Huachun; Huang, Youyang; Wu, Jiejun; Liu, Chuan; Yang, Xiaodong; Gao, Na; Chen, Xiaohong; Kang, Junyong; Cai, Duanjun

2016-10-01

Hexagonal boron nitride (h-BN) is known as promising 2D material with a wide band-gap (~6 eV). However, the growth size of h-BN film is strongly limited by the size of reaction chamber. Here, we demonstrate the large-roll synthesis of monolayer and controllable sub-monolayer h-BN film on wound Cu foil by low pressure chemical vapor deposition (LPCVD) method. By winding the Cu foil substrate into mainspring shape supported by a multi-prong quartz fork, the reactor size limit could be overcome by extending the substrate area to a continuous 2D curl of plane inward. An extremely large-size monolayer h-BN film has been achieved over 25 inches in a 1.2” tube. The optical band gap of h-BN monolayer was determined to be 6.0 eV. The h-BN film was uniformly transferred onto 2” GaN or 4” Si wafer surfaces as a release buffer layer. By HVPE method, overgrowth of thick GaN wafer over 200 μm has been achieved free of residual strain, which could provide high quality homo-epitaxial substrate.

Optical Behavior of III-TM-N Materials and Devices

DTIC Science & Technology

2008-09-26

0296 University of Florida GaN films were doped with Eu to a concentration of ~0.12 at. % during growth at 800 °C by molecular beam epitaxy , with...MAGNETIC SEMICONDUCTOR GROWTH AND CHARACTERIZATION Growth of the films presented occurred in a Varian Gen II by gas-source molecular beam epitaxy ...versus temperature for films of either undoped AlN, single phase AlMnN, or Mn4N. AlCrN films were grown by Molecular Beam Epitaxy (MBE) on c-plane

Structural and electrical properties of Pb(Zr ,Ti)O3 grown on (0001) GaN using a double PbTiO3/PbO bridge layer

NASA Astrophysics Data System (ADS)

Xiao, Bo; Gu, Xing; Izyumskaya, Natalia; Avrutin, Vitaliy; Xie, Jinqiao; Liu, Huiyong; Morkoç, Hadis

2007-10-01

Pb(Zr0.52Ti0.48)O3 films were deposited by rf magnetron sputtering on silicon-doped GaN(0001)/c-sapphire with a PbTiO3/PbO oxide bridge layer grown by molecular beam epitaxy. X-ray diffraction data showed the highly (111)-oriented perovskite phase in lead zirconate titanate (PZT) films with PbTiO3/PbO bridge layers, compared to the pyrochlore phase grown directly on GaN. The in-plane epitaxial relationships were found from x-ray pole figures to be PZT[112¯]‖GaN[11¯00] and PZT[11¯0]‖GaN[112¯0]. The polarization-electric field measurements revealed the ferroelectric behavior with remanent polarization of 30-40μC /cm2 and asymmetric hysteresis loops due to the depletion layer formed in GaN under reverse bias which resulted in a high negative coercive electric field (950kV/cm).

Mosaic structure in epitaxial thin films having large lattice mismatch

NASA Astrophysics Data System (ADS)

Srikant, V.; Speck, J. S.; Clarke, D. R.

1997-11-01

Epitaxial films having a large lattice mismatch with their substrate invariably form a mosaic structure of slightly misoriented sub-grains. The mosaic structure is usually characterized by its x-ray rocking curve on a surface normal reflection but this is limited to the out-of-plane component unless off-axis or transmission experiments are performed. A method is presented by which the in-plane component of the mosaic misorientation can be determined from the rocking curves of substrate normal and off-axis reflections. Results are presented for two crystallographically distinct heteroepitaxial systems, ZnO, AlN, and GaN (wurtzite crystal structure) on c-plane sapphire and MgO (rock salt crystal structure) on (001) GaAs. The differences in the mosaic structure of these films are attributed to the crystallographic nature of their lattice dislocations.

Nano-indentation used to study pyramidal slip in GaN single crystals

NASA Astrophysics Data System (ADS)

Krimsky, E.; Jones, K. A.; Tompkins, R. P.; Rotella, P.; Ligda, J.; Schuster, B. E.

2018-02-01

The nucleation and structure of dislocations created by the nano-indentation of GaN samples with dislocation densities ≈103, 106 or 109 ⊥/cm2 were studied in the interest of learning how dislocations can be created to relieve the mismatch strain in ternary nitride films grown on (0001) oriented binary nitride substrates. Using transmission electron microscopy and stress analyses to assist in interpreting the nano-indentation data, we determined that the pop-ins in the indenter load vs. penetration depth curves are created by an avalanche process at stresses well above the typical yield stress. The process begins by the homogeneous formation of a basal plane screw dislocation that triggers the formation of pyramidal and other basal plane dislocations that relieve the excess stored elastic energy. It appears that pyramidal slip can occur on either the {1122} or {0111} planes, as there is little resistance to the cross slip of screw dislocations.

Growth behavior and growth rate dependency in LEDs performance for Mg-doped a-plane GaN

NASA Astrophysics Data System (ADS)

Song, Keun-Man; Kim, Jong-Min; Lee, Dong-Hun; Shin, Chan-Soo; Ko, Chul-Gi; Kong, Bo-Hyun; Cho, Hyung-Koun; Yoon, Dae-Ho

2011-07-01

We investigated the influence of growth rate of Mg-doped a-plane GaN on the surface morphological and electrical properties, and the characteristics of InGaN-based nonpolar LEDs. Mg-doped a-plane GaN layers were grown on r-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD). Scanning electron microscopy (SEM), transmission electron microscopy (TEM) and cathode luminescence (CL) analysis exhibited that the surface morphology changed from stripe features with large triangular pits to rough and rugged surface with small asymmetric V-shape pits, as the growth rate increased. The Mg incorporation into a-plane GaN layers increased with increasing growth rate of Mg-doped a-plane GaN, while the activation efficiency of Mg dopants decreased in a-plane GaN. Additionally, it was found that operation voltage at 20 mA decreased in characteristics of LEDs, as the growth rate of Mg-doped a-plane GaN decreased. Meanwhile, the EL intensity of LEDs with p-GaN layers grown at higher growth rate was improved compared to that of LEDs with p-GaN layers grown at lower growth rate. Such an increase of EL intensity is attributed to the rougher surface morphology with increasing growth rate of Mg-doped a-plane GaN.

Piezotronic Effect in Polarity-Controlled GaN Nanowires.

PubMed

Zhao, Zhenfu; Pu, Xiong; Han, Changbao; Du, Chunhua; Li, Linxuan; Jiang, Chunyan; Hu, Weiguo; Wang, Zhong Lin

2015-08-25

Using high-quality and polarity-controlled GaN nanowires (NWs), we studied the piezotronic effect in crystal orientation defined wurtzite structures. By applying a normal compressive force on c-plane GaN NWs with an atomic force microscopy tip, the Schottky barrier between the Pt tip and GaN can be effectively tuned by the piezotronic effect. In contrast, the normal compressive force cannot change the electron transport characteristics in m-plane GaN NWs whose piezoelectric polarization axis is turned in the transverse direction. This observation provided solid evidence for clarifying the difference between the piezotronic effect and the piezoresistive effect. We further demonstrated a high sensitivity of the m-plane GaN piezotronic transistor to collect the transverse force. The integration of c-plane GaN and m-plane GaN indicates an overall response to an external force in any direction.

Growth optimization and characterization of GaN epilayers on multifaceted (111) surfaces etched on Si(100) substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ansah-Antwi, KwaDwo Konadu, E-mail: kakadee@gmail.com; Chua, Soo Jin; Department of Electrical and Computer Engineering, National University of Singapore, E4-5-45, 4 Engineering Drive 3, Singapore 117576

2015-11-15

The four nearest Si(111) multifaceted sidewalls were exposed inside an array of 3 μm-wide square holes patterned on an Si(100) substrate, and this patterned Si(100) substrate was used as a substrate for the deposition of a gallium nitride (GaN) epilayer. Subsequently the effect that the growth pressure, the etched-hole profiles, and the etched-hole arrangement had upon the quality of the as-grown GaN was investigated. The coalescence of the as-grown GaN epilayer on the exposed Si(111) facets was observed to be enhanced with reduced growth pressure from 120 to 90 Torr. A larger Si(001) plane area at the bottom of the etched holesmore » resulted in bidirectional GaN domains, which resulted in poor material quality. The bidirectional GaN domains were observed as two sets of six peaks via a high-resolution x-ray diffraction phi scan of the GaN(10-11) reflection. It was also shown that a triangular array of etched holes was more desirable than square arrays of etched holes for the growth high-quality and continuous GaN films.« less

Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy

NASA Astrophysics Data System (ADS)

Burnham, Shawn D.; Namkoong, Gon; Look, David C.; Clafin, Bruce; Doolittle, W. Alan

2008-07-01

The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain reproducible large hole concentrations in Mg-doped GaN grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire substrates. An extremely Ga-rich flux was used, and modulated with the Mg source according to the MME growth technique. The shutter modulation approach of the MME technique allows optimal Mg surface coverage to build between MME cycles and Mg to incorporate at efficient levels in GaN films. The maximum sustained concentration of Mg obtained in GaN films using the MME technique was above 7×1020cm-3, leading to a hole concentration as high as 4.5×1018cm-3 at room temperature, with a mobility of 1.1cm2V-1s-1 and a resistivity of 1.3Ωcm. At 580K, the corresponding values were 2.6×1019cm-3, 1.2cm2V-1s-1, and 0.21Ωcm, respectively. Even under strong white light, the sample remained p-type with little change in the electrical parameters.

The origin of the residual conductivity of GaN films on ferroelectric materials

NASA Astrophysics Data System (ADS)

Lee, Kyoung-Keun; Cai, Zhuhua; Ziemer, Katherine; Doolittle, William Alan

2009-08-01

In this paper, the origin of the conductivity of GaN films grown on ferroelectric materials was investigated using XPS, AES, and XRD analysis tools. Depth profiles confirmed the existence of impurities in the GaN film originating from the substrates. Bonding energy analysis from XPS and AES verified that oxygen impurities from the substrates were the dominant origin of the conductivity of the GaN film. Furthermore, Ga-rich GaN films have a greater chance of enhancing diffusion of lithium oxide from the substrates, resulting in more substrate phase separation and a wider inter-mixed region confirmed by XRD. Therefore, the direct GaN film growth on ferroelectric materials causes impurity diffusion from the substrates, resulting in highly conductive GaN films. Future work needs to develop non-conductive buffer layers for impurity suppression in order to obtain highly resistive GaN films.

Superconductivity and tunneling-junctions in epitaxial Nb2N/AlN/GaN heterojunctions

NASA Astrophysics Data System (ADS)

Yan, Rusen; Han, Yimo; Khalsa, Guru; Vishwanath, Suresh; Katzer, Scott; Nepal, Neeraj; Downey, Brian; Muller, David; Meyer, David; Xing, Grace; Jena, Debdeep; ECE Collaboration; AEP Collaboration; MSE Collaboration; NRL Collaboration

We have discovered that ultrathin highly crystalline Nb2N layers grown epitaxially (by MBE) on SiC and integrated with AlN and GaN heterostructures are high-quality superconductors with transition temperatures from 9-13 K. The out-of-plane critical magnetic fields are found to be 14 Tesla range, and the critical current density is 4*1E5 A/cm2 at 5 K. Preliminary in-plane magnetotransport measurements on 4 nm thin films indicate a significantly high critical magnetic field exceeding 40 T. Since Nb2N superconducting layers can be epitaxially integrated with GaN, AlN, and AlGaN, we also demonstrate Nb2N superconductivity in a layer located beneath an N-polar GaN high-electron-mobility transistor (HEMT) heterostructure that uses a 2DEG channel as a microwave amplifier; such a demonstration illustrates the potential emergence of a new paradigm where an all-epitaxial III-N/Nb2N platform could serve as the basis for microwave qubits to power quantum computation as well as quantum communications.

Epitaxy of Polar Oxides and Semiconductors

NASA Astrophysics Data System (ADS)

Shelton, Christopher Tyrel

Integrating polar oxide materials with wide-bandgap nitride semiconductors offers the possibility of a tunable 2D carrier gas (2DCG) - provided defect densities are low and interfaces are abrupt. This dissertation investigates a portion of the synthesis science necessary to produce a "semiconductor-grade" interface between these highly dissimilar materials. A significant portion of this work is aligned with efforts to engineer a step-free GaN substrate to produce single in-plane oriented rocksalt oxide films. Initially, we explore the homoepitaxial MOCVD growth conditions necessary to produce highquality GaN films on ammonothermally grown substrates. Ammono substrates are only recently available for purchase and are the market leader in low-dislocation density material. Their novelty requires development of an understanding of morphology trade-offs in processing space. This includes preservation of the epi-polished surface in aggressive MOCVD environments and an understanding of the kinetic barriers affecting growth morphologies. Based on several factors, it was determined that GaN exhibits an 'uphill' diffusion bias that may likely be ascribed to a positive Ehrlich-Schwoebel (ES) barrier. This barrier should have a stabilizing effect against step-bunching but, for many growth conditions, regular step bunching was observed. One possible explanation for the step-bunching instability is the presence of impurities. Experimentally, conditions which incorporate more carbon into GaN homoepitaxial layers are correlated with step-bunching while conditions that suppress carbon produce bilayer stepped morphologies. These observations lead us to the conclusion that GaN homoepitaxial morphology is a competition between impurity induced step-bunching and a stabilizing diffusion bias due to a positive ES barrier. Application of the aforementioned homoepitaxial growth techniques to discrete substrate regions using selected- and confined area epitaxy (SAE,CAE) produces some remarkable surface morphologies. This work represents the first effort to extend SAE and CAE to true bulk single-crystal GaN substrates. By carefully controlling supersaturation during growth it is possible to prepare confined areas with a range of step densities, including surfaces that are entirely step-free. Single terrace GaN mesas up to 100 m in size have been observed, however the potential exists, due to the extremely low dislocation density of the substrate, to further extend the dimensions of these regions. Step-free GaN templates are ideal substrates for rocksalt heteroepitaxy and solve a long-standing challenge related to the integration of cubic and hexagonal materials. It has been previously observed that the origin of the two in-plane orientations in rocksalts grown on III-nitrides is a consequence of the stepped GaN surface. By using a substrate that is effectively step-free across a 100 m region, it is possible to prepare a rocksalt // GaN film with a single in-plane orientation. Heterojunctions of this type are disclination defect free and highly crystalline. The ability to locally prepare a single orientation rocksalt film, coupled with commensurate 2D layer-by-layer growth techniques, allows growth, for the first time, of a truly 'semiconductor-grade' oxide-nitride interface. To study the transport properties of oxide-nitride heterostructures, a series of experiments on standard GaN // sapphire template layers were conducted. Devices that allowed contact to the buried oxide-nitride interface were prepared and characterized using low-temperature Hall measurements. Although a high mobility 2DEG was not observed in these samples, a conduction path at the lattice matched Mg0.52Ca0.48O // GaN interface did appear. If confirmed, this finding could represent the first evidence for interfacial polar coupling between an oxide and a nitride. Overcoming the significant symmetry, chemistry and bonding environment barriers to forming a structurally perfect oxide-nitride interface has required many innovations and the development of several new technologies. It is encouraging, however, that a path around such challenging obstacles exists. We believe the techniques and findings presented in this work are general to many systems, offering hope for a future 'materials functionality' based integration strategy. (Abstract shortened by ProQuest.).

Structural anisotropy of nonpolar and semipolar InN epitaxial layers

NASA Astrophysics Data System (ADS)

Darakchieva, V.; Xie, M.-Y.; Franco, N.; Giuliani, F.; Nunes, B.; Alves, E.; Hsiao, C. L.; Chen, L. C.; Yamaguchi, T.; Takagi, Y.; Kawashima, K.; Nanishi, Y.

2010-10-01

We present a detailed study of the structural characteristics of molecular beam epitaxy grown nonpolar InN films with a- and m-plane surface orientations on r-plane sapphire and (100) γ-LiAlO2, respectively, and semipolar (101¯1) InN grown on r-plane sapphire. The on-axis rocking curve (RC) widths were found to exhibit anisotropic dependence on the azimuth angle with minima at InN [0001] for the a-plane films, and maxima at InN [0001] for the m-plane and semipolar films. The different contributions to the RC broadening are analyzed and discussed. The finite size of the crystallites and extended defects are suggested to be the dominant factors determining the RC anisotropy in a-plane InN, while surface roughness and curvature could not play a major role. Furthermore, strategy to reduce the anisotropy and magnitude of the tilt and minimize defect densities in a-plane InN films is suggested. In contrast to the nonpolar films, the semipolar InN was found to contain two domains nucleating on zinc-blende InN(111)A and InN(111)B faces. These two wurtzite domains develop with different growth rates, which was suggested to be a consequence of their different polarity. Both, a- and m-plane InN films have basal stacking fault densities similar or even lower compared to nonpolar InN grown on free-standing GaN substrates, indicating good prospects of heteroepitaxy on foreign substrates for the growth of InN-based devices.

Impact of substrate off-angle on the m-plane GaN Schottky diodes

NASA Astrophysics Data System (ADS)

Yamada, Hisashi; Chonan, Hiroshi; Takahashi, Tokio; Shimizu, Mitsuaki

2018-04-01

We investigated the effects of the substrate off-angle on the m-plane GaN Schottky diodes. GaN epitaxial layers were grown by metal-organic chemical vapor deposition on m-plane GaN substrates having an off-angle of 0.1, 1.1, 1.7, or 5.1° toward [000\\bar{1}]. The surface of the GaN epitaxial layers on the 0.1°-off substrate consisted of pyramidal hillocks and contained oxygen (>1017 cm-3) and carbon (>1016 cm-3) impurities. The residual carbon and oxygen impurities decreased to <1016 cm-3 when the off-angle of the m-plane GaN substrate was increased. The leakage current of the 0.1°-off m-plane GaN Schottky diodes originated from the +c facet of the pyramidal hillocks. The leakage current was efficiently suppressed through the use of an off-angle that was observed to be greater than 1.1°. The off-angle of the m-plane GaN substrate is critical in obtaining high-performance Schottky diodes.

Influence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire

NASA Astrophysics Data System (ADS)

Dixit, Ripudaman; Tyagi, Prashant; Kushvaha, Sunil Singh; Chockalingam, Sreekumar; Yadav, Brajesh Singh; Sharma, Nita Dilawar; Kumar, M. Senthil

2017-04-01

We have investigated the influence of growth temperature on the in-plane strain, structural, optical and mechanical properties of heteroepitaxially grown GaN layers on sapphire (0001) substrate by laser molecular beam epitaxy (LMBE) technique in the temperature range 500-700 °C. The GaN epitaxial layers are found to have a large in-plane compressive stress of about 1 GPa for low growth temperatures but the strain drastically reduced in the layer grown at 700 °C. The nature of the in-plane strain has been analyzed using high resolution x-ray diffraction, atomic force microscopy (AFM), Raman spectroscopy and photoluminescence (PL) measurements. From AFM, a change in GaN growth mode from grain to island is observed at the high growth temperature above 600 °C. A blue shift of 20-30 meV in near band edge PL emission line has been noticed for the GaN layers containing the large in-plane strain. These observations indicate that the in-plane strain in the GaN layers is dominated by a biaxial strain. Using nanoindentation, it is found that the indentation hardness and Young's modulus of the GaN layers increases with increasing growth temperature. The results disclose the critical role of growth mode in determining the in-plane strain and mechanical properties of the GaN layers grown by LMBE technique.

GaN epitaxial layers grown on multilayer graphene by MOCVD

NASA Astrophysics Data System (ADS)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe

2018-04-01

In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by using metal-organic chemical vapor deposition (MOCVD). Highly crystalline orientations of the GaN films were confirmed through electron backscatter diffraction (EBSD). An epitaxial relationship between GaN films and MLG is unambiguously established by transmission electron microscope (TEM) analysis. The Raman spectra was used to analyze the internal stress of GaN films, and the spectrum shows residual tensile stress in the GaN films. Moreover, the results of the TEM analysis and Raman spectra indicate that the high quality of the MLG substrate is maintained even after the growth of the GaN film. This high-quality MLG makes it possible to easily remove epitaxial layers from the supporting substrate by micro-mechanical exfoliation technology. This work can aid in the development of transferable devices using GaN films.

Mechanical properties of nanoporous GaN and its application for separation and transfer of GaN thin films.

PubMed

Huang, Shanjin; Zhang, Yu; Leung, Benjamin; Yuan, Ge; Wang, Gang; Jiang, Hao; Fan, Yingmin; Sun, Qian; Wang, Jianfeng; Xu, Ke; Han, Jung

2013-11-13

Nanoporous (NP) gallium nitride (GaN) as a new class of GaN material has many interesting properties that the conventional GaN material does not have. In this paper, we focus on the mechanical properties of NP GaN, and the detailed physical mechanism of porous GaN in the application of liftoff. A decrease in elastic modulus and hardness was identified in NP GaN compared to the conventional GaN film. The promising application of NP GaN as release layers in the mechanical liftoff of GaN thin films and devices was systematically studied. A phase diagram was generated to correlate the initial NP GaN profiles with the as-overgrown morphologies of the NP structures. The fracture toughness of the NP GaN release layer was studied in terms of the voided-space-ratio. It is shown that the transformed morphologies and fracture toughness of the NP GaN layer after overgrowth strongly depends on the initial porosity of NP GaN templates. The mechanical separation and transfer of a GaN film over a 2 in. wafer was demonstrated, which proves that this technique is useful in practical applications.

Growth process for gallium nitride porous nanorods

DOEpatents

Wildeson, Isaac Harshman; Sands, Timothy David

2015-03-24

A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiN.sub.x on the GaN film, etching a growth opening through the SiN.sub.x and into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiN.sub.x layer can be removed after the growing step. A SiO.sub.x template can be formed on the GaN film and the GaN can be grown to cover the SiO.sub.x template before depositing SiN.sub.x on the GaN film. The SiO.sub.x template can be removed after growing the nanorods.

Controlling Surface Morphology and Circumventing Secondary Phase Formation in Non-polar m-GaN by Tuning Nitrogen Activity

NASA Astrophysics Data System (ADS)

Chang, C. W.; Wadekar, P. V.; Guo, S. S.; Cheng, Y. J.; Chou, M.; Huang, H. C.; Hsieh, W. C.; Lai, W. C.; Chen, Q. Y.; Tu, L. W.

2018-01-01

For the development of non-polar nitrides based optoelectronic devices, high-quality films with smooth surfaces, free of defects or clusters, are critical. In this work, the mechanisms governing the topography and single phase epitaxy of non-polar m-plane gallium nitride ( m-GaN) thin films are studied. The samples were grown using plasma-assisted molecular beam epitaxy on m-plane sapphire substrates. Growth of pure m-GaN thin films, concomitant with smooth surfaces is possible at low radio frequency powers and high growth temperatures as judged by the high resolution x-ray diffraction, field emission scanning electron microscopy, and atomic force microscopy measurements. Defect types and densities are quantified using transmission electron microscopy, while Raman spectroscopy was used to analyze the in-plane stress in the thin films which matches the lattice mismatch analysis. Energy dispersive spectroscopy and cathodoluminescence support a congruent growth and a dominant near band edge emission. From the analysis, a narrow growth window is discovered wherein epitaxial growth of pure m-plane GaN samples free of secondary phases with narrow rocking curves and considerable smooth surfaces are successfully demonstrated.

Observation of defects evolution in electronic materials

NASA Astrophysics Data System (ADS)

Jang, Jung Hun

Advanced characterization techniques have been used to obtain a better understanding of the microstructure of electronic materials. The structural evolution, especially defects, has been investigated during the film growth and post-growth processes. Obtaining the relation between the defect evolution and growth/post-growth parameters is very important to obtain highly crystalline films. In this work, the growth and post-growth related defects in GaN, ZnO, strained-Si/SiGe films have been studied using several advanced characterization techniques. First of all, the growth of related defects in GaN and p-type ZnO films have been studied. The effect of growth parameters, such as growth temperature, gas flow rate, dopants used during the deposition, on the crystalline quality of the GaN and ZnO layers was investigated by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). In GaN films, it was found that the edge and mixed type threading dislocations were the dominant defects so that the only relevant figure of merit (FOM) for the crystalline quality should be the FWHM value of o-RC of the surface perpendicular plane which could be determined by a grazing incidence x-ray diffraction (GIXD) technique as shown in this work. The understanding of the relationship between the defect evolution and growth parameters allowed for the growth of high crystalline GaN films. For ZnO films, it was found that the degree of texture and crystalline quality of P-doped ZnO films decreased with increasing the phosphorus atomic percent. In addition, the result from the x-ray diffraction line profile analysis showed that the 0.5 at % P-doped ZnO film showed much higher microstrain than the 1.0 at % P-doped ZnO film, which indicated that the phosphorus atoms were segregated with increasing P atomic percentage. Finally, post-growth related defects in strained-Si/SiGe films were investigated. Postgrowth processes used in this work included high temperature N2 annealing, ion-implantation, and thermal oxidation. Advanced characterization techniques have been used to obtain information about strain, relaxation, layer thickness, elemental composition, defects, surface/interface morphology changes and so on. Based on the understanding of defects behavior during the strain relaxation after post thermal processes, a new manufacturing process to obtain highly-relaxed and thin Si1-xGex layers, which could be used as virtual substrates for strained-Si applications, was found.

Effect of substrate nitridation temperature on the persistent photoconductivity of unintentionally-doped GaN layer grown by PAMBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prakash, Nisha, E-mail: prakasnisha@gmail.com; Barvat, Arun; Anand, Kritika

2016-05-23

The surface roughness and defect density of GaN epitaxial layers grown on c-plane sapphire substrate are investigated and found to be dependent on nitridation temperature. GaN epitaxial layers grown after nitridation of sapphire at 200°C have a higher defect density and higher surface roughness compared to the GaN layers grown at 646°C nitridation as confirmed by atomic force microscopy (AFM). The persistent photoconductivity (PPC) was observed in both samples and it was found to be decreasing with decreasing temperature in the range 150-300°C due to long carrier lifetime and high electron mobility at low temperature. The photoresponse of the GaNmore » films grown in this study exhibit improved PPC due to their better surface morphology at 646°C nitrided sample. The point defects or extended microstructure defects limits the photocarrier lifetime and electron mobility at 200°C nitrided sample.« less

Characterization of Pb-Doped GaN Thin Films Grown by Thermionic Vacuum Arc

NASA Astrophysics Data System (ADS)

Özen, Soner; Pat, Suat; Korkmaz, Şadan

2018-03-01

Undoped and lead (Pb)-doped gallium nitride (GaN) thin films have been deposited by a thermionic vacuum arc (TVA) method. Glass and polyethylene terephthalate were selected as optically transparent substrates. The structural, optical, morphological, and electrical properties of the deposited thin films were investigated. These physical properties were interpreted by comparison with related analysis methods. The crystalline structure of the deposited GaN thin films was hexagonal wurtzite. The optical bandgap energy of the GaN and Pb-doped GaN thin films was found to be 3.45 eV and 3.47 eV, respectively. The surface properties of the deposited thin films were imaged using atomic force microscopy and field-emission scanning electron microscopy, revealing a nanostructured, homogeneous, and granular surface structure. These results confirm that the TVA method is an alternative layer deposition system for Pb-doped GaN thin films.

Characterizations of GaN film growth by ECR plasma chemical vapor deposition

NASA Astrophysics Data System (ADS)

Fu, Silie; Chen, Junfang; Zhang, Hongbin; Guo, Chaofen; Li, Wei; Zhao, Wenfen

2009-06-01

The electron cyclotron resonance plasma-enhanced metalorganic chemical vapor deposition technology (ECR-MOPECVD) is adopted to grow GaN films on (0 0 0 1) α-Al2O3 substrate. The gas sources are pure N2 and trimethylgallium (TMG). Optical emission spectroscopy (OES) and thermodynamic analysis of GaN growth are applied to understand the GaN growth process. The OES of ECR plasma shows that TMG is significantly dissociated in ECR plasma. Reactants N and Ga in the plasma, obtained easily under the self-heating condition, are essential for the GaN growth. They contribute to the realization of GaN film growth at a relatively low temperature. The thermodynamic study shows that the driving force for the GaN growth is high when N2:TMG>1. Furthermore, higher N2:TMG flow ratio makes the GaN growth easier. Finally, X-ray diffraction, photoluminescence, and atomic force microscope are applied to investigate crystal quality, morphology, and roughness of the GaN films. The results demonstrate that the ECR-MOPECVD technology is favorable for depositing GaN films at low temperatures.

Synthesis of galium nitride thin films using sol-gel dip coating method

NASA Astrophysics Data System (ADS)

Hamid, Maizatul Akmam Ab; Ng, Sha Shiong

2017-12-01

In this research, gallium nitride (GaN) thin film were grown on silicon (Si) substrate by a low-cost sol-gel dip coating deposition method. The GaN precursor solution was prepared using gallium (III) nitrate hydrate powder, ethanol and diethanolamine as a starting material, solvent and surfactant respectively. The structural, morphological and optical characteristics of the deposited GaN thin film were investigated. Field-emission scanning electron microscopy observations showed that crack free and dense grains GaN thin films were formed. Energy dispersive X-ray analysis confirmed that the oxygen content in the deposited films was low. X-ray diffraction results revealed that deposited GaN thin films have hexagonal wurtzite structure.

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

PubMed

Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

2016-04-22

High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids.

PubMed

Lee, Ming-Lun; Yeh, Yu-Hsiang; Tu, Shang-Ju; Chen, P C; Lai, Wei-Chih; Sheu, Jinn-Kong

2015-04-06

Non-planar InGaN/GaN multiple quantum well (MQW) structures are grown on a GaN template with truncated hexagonal pyramids (THPs) featuring c-plane and r-plane surfaces. The THP array is formed by the regrowth of the GaN layer on a selective-area Si-implanted GaN template. Transmission electron microscopy shows that the InGaN/GaN epitaxial layers regrown on the THPs exhibit different growth rates and indium compositions of the InGaN layer between the c-plane and r-plane surfaces. Consequently, InGaN/GaN MQW light-emitting diodes grown on the GaN THP array emit multiple wavelengths approaching near white light.

Growth and characterizations of various GaN nanostructures on C-plane sapphire using laser MBE

NASA Astrophysics Data System (ADS)

Ch., Ramesh; Tyagi, P.; Maurya, K. K.; Kumar, M. Senthil; Kushvaha, S. S.

2017-05-01

We have grown various GaN nanostructures such as three-dimensional islands, nanowalls and nanocolumns on c-plane sapphire substrates using laser assisted molecular beam epitaxy (LMBE) system. The shape of the GaN nanostructures was controlled by using different nucleation surfaces such as bare and nitridated sapphire with GaN or AlN buffer layers. The structural and surface morphological properties of grown GaN nanostructures were characterized by ex-situ high resolution x-ray diffraction, Raman spectroscopy and field emission scanning electron microscopy. The symmetric x-ray rocking curve along GaN (0002) plane shows that the GaN grown on pre-nitridated sapphire with GaN or AlN buffer layer possesses good crystalline quality compared to sapphire without nitridation. The Raman spectroscopy measurements revealed the wurtzite phase for all the GaN nanostructures grown on c-sapphire.

Effect of strain on gallium nitride and gallium indium arsenide nitride growth and doping

NASA Astrophysics Data System (ADS)

G. S., Sudhir

GaN and the related (Al,In)N materials are currently used in manufacturing optoelectronic and electronic devices. However, the efficiency of these devices is limited due to lack of high structural quality and of low resistive p-type GaN. The GaN thin films are under strain during growth due to the large lattice mismatch, thermal expansion difference, and low growth temperature. Developing a better understanding of the effect of strain on the properties of thin films is important in furthering our knowledge of thin film growth affecting the performance of III-nitride based devices. Pulsed laser deposition was used to grow thin films of AlN and GaN on sapphire substrates. It is shown that the structure and surface morphology of layers are controlled by the nitrogen partial pressure during the growth. Through these nitrogen pressure related effects, thin films with microstructure ranging from crystalline to amorphous can be produced. A minimal surface root mean square roughness of 0.7 nm for amorphous AlN is obtained which compares well with the substrate roughness of 0.5 nm. Incorporation of impurities changes the lattice constants of thin films of GaN deposited on basal plane sapphire by molecular beam epitaxy. Both Mg (1017 cm-3) and Zn (3 x 10 20 cm-3) doping were found to expand the c lattice parameter by +0.38 x 10-2 and +0.62 x 10 -2, respectively. Oxygen up to concentrations 9 x 10 21 cm-3 is shown to replace nitrogen in GaN thin films reducing the c parameter only by a small amount. Incorporation of Si leads to a large decrease of the c parameter, which can not be attributed to the different size of Ga and Si. It is suggested that doping alters the film stoichiometry by a predicted Fermi level dependence of defect formation energies and thereby, lattice parameters and stress. A proper buffer layer design is shown to increase the incorporation of Mg by two orders of magnitude Finally, the balance of lattice parameter change caused by dopant and native point defects with strain contributed by growth condition leads to high mobility p-type GaN thin films. Incorporation of N in thin films of GaAsN and GaInAsN on GaAs was studied by molecular beam epitaxy. X-ray diffraction results indicated that the amount of N in GaAs increased with the power to plasma source and the slower growth rate, but was not affected by the growth temperature. Photoluminescence (PL) results showed a drastic narrowing of the bandgap with increased N incorporation. High pressure measurements showed the pressure coefficient of the absorption edge of 4 mum thick GaInAsN layer to be unusually small (51 meV/GPa). Also, the temperature-induced shift of the edge is reduced by 50% compared to that of GaAs. Based on the results of the detailed materials characterization, optimized p-GaAs/i-GaInAsN/n-GaAs structures were grown for I mum photo-detectors. The device characteristics of the prototype devices are presented.

Preparation of freestanding GaN wafer by hydride vapor phase epitaxy on porous silicon

NASA Astrophysics Data System (ADS)

Wu, Xian; Li, Peng; Liang, Renrong; Xiao, Lei; Xu, Jun; Wang, Jing

2018-05-01

A freestanding GaN wafer was prepared on porous Si (111) substrate using hydride vapor phase epitaxy (HVPE). To avoid undesirable effects of the porous surface on the crystallinity of the GaN, a GaN seed layer was first grown on the Si (111) bare wafer. A pattern with many apertures was fabricated in the GaN seed layer using lithography and etching processes. A porous layer was formed in the Si substrate immediately adjacent to the GaN seed layer by an anodic etching process. A 500-μm-thick GaN film was then grown on the patterned GaN seed layer using HVPE. The GaN film was separated from the Si substrate through the formation of cracks in the porous layer caused by thermal mismatch stress during the cooling stage of the HVPE. Finally, the GaN film was polished to obtain a freestanding GaN wafer.

Linearly polarized photoluminescence of anisotropically strained c-plane GaN layers on stripe-shaped cavity-engineered sapphire substrate

NASA Astrophysics Data System (ADS)

Kim, Jongmyeong; Moon, Daeyoung; Lee, Seungmin; Lee, Donghyun; Yang, Duyoung; Jang, Jeonghwan; Park, Yongjo; Yoon, Euijoon

2018-05-01

Anisotropic in-plane strain and resultant linearly polarized photoluminescence (PL) of c-plane GaN layers were realized by using a stripe-shaped cavity-engineered sapphire substrate (SCES). High resolution X-ray reciprocal space mapping measurements revealed that the GaN layers on the SCES were under significant anisotropic in-plane strain of -0.0140% and -0.1351% along the directions perpendicular and parallel to the stripe pattern, respectively. The anisotropic in-plane strain in the GaN layers was attributed to the anisotropic strain relaxation due to the anisotropic arrangement of cavity-incorporated membranes. Linearly polarized PL behavior such as the observed angle-dependent shift in PL peak position and intensity comparable with the calculated value based on k.p perturbation theory. It was found that the polarized PL behavior was attributed to the modification of valence band structures induced by anisotropic in-plane strain in the GaN layers on the SCES.

Microstructural response of InGaN to swift heavy ion irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, L. M.; Jiang, W.; Fadanelli, R. C.

2016-12-01

A monocrystalline In0.18Ga0.82N film of ~275 nm in thickness grown on a GaN/Al 2O 3 substrate was irradiated with 290 MeV 238U 32+ ions to a fluence of 1.2 x 12 cm -2 at room temperature. The irradiated sample was characterized using helium ion microscopy (HIM), Rutherford backscattering spectrometry under ion-channeling conditions (RBS/C), and high-resolution x-ray diffraction (HRXRD). The irradiation leads to formation of ion tracks throughout the thin In 0.18Ga 0.82N film and the 3.0 µm thick GaN buffer layer. The mean diameter of the tracks in In 0.18Ga 0.82N is ~9 nm, as determined by HIM examination. Combinationmore » of the HIM and RBS/C data suggests that the material in the track is likely to be highly disordered or fully amorphized, in contrast to a crystalline structure within the ion track in GaN. Lattice relaxation in In0.18Ga0.82N and a distribution of d-spacing of the (0002) planes in GaN with lattice expansion are observed after irradiation.« less

Electrical properties of polycrystalline GaN films functionalized with cysteine and stabilization of GaN nanoparticles in aqueous media.

PubMed

Arízaga, Gregorio Guadalupe Carbajal; Oviedo, Mariana J; López, Oscar Edel Contreras

2012-10-01

GaN was synthesized onto sapphire substrates by chemical vapor deposition, reacting gallium, ammonium chloride and ammonia. The polycrystalline films were immersed in glycine, aspartic acid and cysteine solutions. Cysteine chemisorbed onto GaN films produced detectable changes in conductivity, mobility and Hall coefficient indicating that GaN is capable of detecting and reacting with thiolate groups, which was confirmed by X-ray photoelectron spectroscopy. The Cys-GaN film solution was adjusted to pH 10, upon which the GaN nanoparticles were transferred to the aqueous phase forming a suspension stable for seven days. The alkaline colloid was then further adjusted down to pH 3 retaining stability for three days. The GaN colloid obtained represents a suitable medium to study GaN properties for biological applications. Copyright © 2012 Elsevier B.V. All rights reserved.

An investigation of GaN thin films on AlN on sapphire substrate by sol-gel spin coating method

NASA Astrophysics Data System (ADS)

Amin, Nur Fahana Mohd; Ng, Sha Shiong

2017-12-01

In this research, the gallium nitride (GaN) thin films were deposited on aluminium nitride on sapphire (AlN/Al2O3) substrate by sol-gel spin coating method. Simple ethanol-based precursor with the addition of diethanolamine solution was used. The structural and morphology properties of synthesized GaN thin films were characterized by using X-ray Diffraction, Field-Emission Scanning Electron Microscopy and Atomic Force Microscopy. While the elemental compositions and the lattice vibrational properties of the films were investigated by means of the Energy Dispersive X-ray spectroscopy and Raman spectroscopy. All the results revealed that the wurtzite structure GaN thin films with GaN(002) preferred orientation and smooth surface morphology were successfully grown on AlN/Al2O3 substrate by using inexpensive and simplified sol-gel spin coating technique. The sol-gel spin coated GaN thin film with lowest oxygen content was also achieved.FESEM images show that GaN thin films with uniform and packed grains were formed. Based on the obtained results, it can be concluded that wurtzite structure GaN thin films were successfully deposited on AlN/Al2O3 substrate.

Chemical lift-off of (11-22) semipolar GaN using periodic triangular cavities

NASA Astrophysics Data System (ADS)

Jeon, Dae-Woo; Lee, Seung-Jae; Jeong, Tak; Baek, Jong Hyeob; Park, Jae-Woo; Jang, Lee-Woon; Kim, Myoung; Lee, In-Hwan; Ju, Jin-Woo

2012-01-01

Chemical lift-off of (11-22) semipolar GaN using triangular cavities was investigated. The (11-22) semipolar GaN was grown using epitaxial lateral overgrowth by metal-organic chemical vapor deposition on m-plane sapphire, in such a way as to keep N terminated surface of c-plane GaN exposed in the cavities. After regrowing 300 μm thick (11-22) semipolar GaN by hydride vapor phase epitaxy for a free-standing (11-22) semipolar GaN substrate, the triangular cavities of the templates were chemically etched in molten KOH. The (000-2) plane in the triangular cavities can be etched in the [0002] direction with the high lateral etching rate of 196 μm/min. The resulting free-standing (11-22) semipolar GaN substrate was confirmed to be strain-free by the Raman analysis.

Highly crystalline MoS{sub 2} thin films grown by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Serrao, Claudy R.; You, Long; Gadgil, Sushant

2015-02-02

Highly crystalline thin films of MoS{sub 2} were prepared over large area by pulsed laser deposition down to a single monolayer on Al{sub 2}O{sub 3} (0001), GaN (0001), and SiC-6H (0001) substrates. X-ray diffraction and selected area electron diffraction studies show that the films are quasi-epitaxial with good out-of-plane texture. In addition, the thin films were observed to be highly crystalline with rocking curve full width half maxima of 0.01°, smooth with a RMS roughness of 0.27 nm, and uniform in thickness based on Raman spectroscopy. From transport measurements, the as-grown films were found to be p-type.

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

PubMed

Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

2015-11-13

2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.

Refractive index of erbium doped GaN thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alajlouni, S.; Sun, Z. Y.; Li, J.

2014-08-25

GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540 nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300 arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers andmore » represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540 nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.« less

Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates

NASA Astrophysics Data System (ADS)

Lee, Fang-Wei; Ke, Wen-Cheng; Cheng, Chun-Hong; Liao, Bo-Wei; Chen, Wei-Kuo

2016-07-01

This study presents GaN thin films grown on nanoscale-patterned sapphire substrates (NPSSs) with different aspect ratios (ARs) using a homemade metal-organic chemical vapor deposition system. The anodic aluminum oxide (AAO) technique is used to prepare the dry etching mask. The cross-sectional view of the scanning electron microscope image shows that voids exist between the interface of the GaN thin film and the high-AR (i.e. ∼2) NPSS. In contrast, patterns on the low-AR (∼0.7) NPSS are filled full of GaN. The formation of voids on the high-AR NPSS is believed to be due to the enhancement of the lateral growth in the initial growth stage, and the quick-merging GaN thin film blocks the precursors from continuing to supply the bottom of the pattern. The atomic force microscopy images of GaN on bare sapphire show a layer-by-layer surface morphology, which becomes a step-flow surface morphology for GaN on a high-AR NPSS. The edge-type threading dislocation density can be reduced from 7.1 × 108 cm-2 for GaN on bare sapphire to 4.9 × 108 cm-2 for GaN on a high-AR NPSS. In addition, the carrier mobility increases from 85 cm2/Vs for GaN on bare sapphire to 199 cm2/Vs for GaN on a high-AR NPSS. However, the increased screw-type threading dislocation density for GaN on a low-AR NPSS is due to the competition of lateral growth on the flat-top patterns and vertical growth on the bottom of the patterns that causes the material quality of the GaN thin film to degenerate. Thus, the experimental results indicate that the AR of the particular patterning of a NPSS plays a crucial role in achieving GaN thin film with a high crystalline quality.

Gallium nitride microcavities formed by photoenhanced wet oxidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peng, L.-H.; Lu, C.-Y.; Wu, W.-H.

We report the formation of gallium nitride (GaN) microcavities by manipulating a photoenhanced oxidation rate difference between the polar and nonpolar crystallographic planes of GaN. When immersed in a buffered acetic (CH{sub 3}COOH) electrolyte of pH{approx}6.2 at room temperature, it is shown that the photo-oxidation can proceed at a rate that is one order of magnitude slower on the nonpolar plane of {l_brace}1100{r_brace}{sub GaN} than on the polar plane of {l_brace}0001{r_brace}{sub GaN} due to the reduced surface field action. Gallium nitride microcavities bounded by optically smooth {l_brace}1100{r_brace} and {l_brace}1103{r_brace} facets can thus be preferentially formed on the c-plane sapphire substratemore » after dissolving the oxide layer. The optical properties of these GaN hexagonal cavities reveal characteristic peaks of whispering gallery modes in resonance with the GaN band edge emission spectrum. A typical cavity Q factor of 10{sup 3} is observed in these GaN microcavities due to a reduced optical scattering loss in the wet chemical reaction process.« less

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

PubMed Central

Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

2015-01-01

2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices. PMID:26563573

Semiconductor Film Grown on a Circular Substrate: Predictive Modeling of Lattice-Misfit Stresses

NASA Astrophysics Data System (ADS)

Suhir, E.; Nicolics, J.; Khatibi, G.; Lederer, M.

2016-03-01

An effective and physically meaningful analytical predictive model is developed for the evaluation the lattice-misfit stresses (LMS) in a semiconductor film grown on a circular substrate (wafer). The two-dimensional (plane-stress) theory-of-elasticity approximation (TEA) is employed in the analysis. The addressed stresses include the interfacial shearing stress, responsible for the occurrence and growth of dislocations, as well as for possible delaminations and the cohesive strength of a buffering material, if any. Normal radial and circumferential (tangential) stresses acting in the film cross-sections and responsible for its short- and long-term strength (fracture toughness) are also addressed. The analysis is geared to the GaN technology.

Injection Laser Using Rare Earth Doped GaN Thin Films for Visible and Infrared Applications

DTIC Science & Technology

2010-05-01

system is used to measure the conductivity of GaN thin films in Nanolab. Undoped GaN thin films are usually n-type conductive with the electron ...being investigated for potential applications in optical communication and displays, due to the wide and direct energy bandgap of GaN resulting in low...enhancement on Eu3+ PL intensity. The electrical properties of GaN:RE thin films were changed from high resistive to

Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon

NASA Astrophysics Data System (ADS)

Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang

2015-09-01

We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch ( 3.2%) and thermal expansion coefficient difference ( 7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.

Effects of Mg Doping on the Performance of InGaN Films Made by Reactive Sputtering

NASA Astrophysics Data System (ADS)

Kuo, Dong-Hau; Li, Cheng-Che; Tuan, Thi Tran Anh; Yen, Wei-Chun

2015-01-01

Mg-doped InGaN (Mg-InGaN) films have been deposited directly on Si (100) substrates by radio-frequency reactive sputtering technique with single cermet targets in an Ar/N2 atmosphere. The cermet targets with a constant 5% indium content were made by hot pressing the mixture of metallic In, Ga, and Mg powders and ceramic GaN powder. The Mg-InGaN films had a wurtzite structure with a preferential () growth plane. The SEM images showed that Mg-InGaN films were smooth, continuous, free from cracks and holes, and composed of nanometer-sized grains. As the Mg dopant content in Mg-InGaN increased to 7.7 at.%, the film was directly transformed into p-type conduction without a post-annealing process. It had high hole concentration of 5.53 × 1018 cm-3 and electrical mobility of 15.7 ± 4.2 cm2 V-1 s-1. The over-doping of Mg in InGaN degraded the electrical properties. The bandgap of Mg-InGaN films decreased from 2.92 eV to 2.84 eV, as the Mg content increased from 7.7% to 18.2%. The constructed p-type Mg-InGaN/ n-type GaN diode was used to confirm the realization of the p-type InGaN by sputtering technique.

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

NASA Astrophysics Data System (ADS)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

2016-01-01

KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 ÿ 1017 cm⿿3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

High optical quality GaN nanopillar arrays

NASA Astrophysics Data System (ADS)

Wang, Y. D.; Chua, S. J.; Tripathy, S.; Sander, M. S.; Chen, P.; Fonstad, C. G.

2005-02-01

GaN nanopillar arrays have been fabricated by inductively coupled plasma etching of GaN films using anodic aluminum oxide film as an etch mask. The average diameter and length of these pillars are 60-65nm and 350-400nm, respectively. Ultraviolet microphotoluminescence measurements indicate high photoluminescence intensity and stress relaxation in these GaN nanopillars as compared to the starting epitaxial GaN films. Evidence of good crystalline quality is also observed by micro-Raman measurements, wherein a redshift of the E2high mode from GaN nanopillars suggests partial relaxation of the compressive strain. In addition, breakdown of the polarization selection rules led to the appearance of symmetry-forbidden and quasipolar modes.

Transmission electron microscopy study of microstructural properties and dislocation characterization in the GaN film grown on the cone-shaped patterned Al2O3 substrate.

PubMed

Park, Jung Sik; Yang, Jun-Mo; Park, Kyung Jin; Park, Yun Chang; Yoo, Jung Ho; Jeong, Chil Seong; Park, Jucheol; He, Yinsheng; Shin, Keesam

2014-02-01

Growing a GaN film on a patterned Al2O3 substrate is one of the methods of reducing threading dislocations (TDs), which can significantly deteriorate the performance of GaN-based LEDs. In this study, the microstructural details of the GaN film grown on a cone-shaped patterned Al2O3 substrate were investigated using high-resolution transmission electron microscopy and weak-beam dark-field techniques. Various defects such as misfit dislocations (MDs), recrystallized GaN (R-GaN) islands and nano-voids were observed on the patterned Al2O3 surfaces, i.e. the flat surface (FS), the inclined surface (IS) and the top surface (TS), respectively. Especially, the crystallographic orientation of R-GaN between the GaN film and the inclined Al2O3 substrate was identified as $[\\overline 1 2\\overline 1 0]_{{\\rm GaN}} \\hbox{//}[\\overline 1 101]_{{\\rm R - GaN} \\,{\\rm on}\\,{\\rm IS}} \\hbox{//}[\\overline 1 100]_{ {{\\rm Al}} _{\\rm 2} {\\rm O}_{\\rm 3}} $, $(\\overline 1 012)_{{\\rm GaN}} \\hbox{//}(1\\overline 1 02)_{{\\rm R - Ga}\\,{\\rm Non}\\,{\\rm IS}} \\hbox{//}(\\overline {11} 26)_{ {{\\rm Al}} _{\\rm 2} {\\rm O}_{\\rm 3}} $. In addition, a rotation by 9° between $(10\\overline 1 1)_{{\\rm R - GaN}} $ and $(0002)_{{\\rm GaN}} $ and between $(10\\overline 1 1)_{{\\rm R - GaN}} $ and $(0006)_{ {{\\rm Al}} _{\\rm 2} {\\rm O}_{\\rm 3}} $ was found to reduce the lattice mismatch between the GaN film and the Al2O3 substrate. Many TDs in the GaN film were observed on the FS and TS of Al2O3. However, few TDs were observed on the IS. Most of the TDs generated from the FS of Al2O3 were bent to the inclined facet rather than propagating to the GaN surface, resulting in a reduction in the dislocation density. Most of the TDs generated from the TS of Al2O3 were characterized as edge dislocations.

Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure

NASA Astrophysics Data System (ADS)

Shen, Huaxiang; Zhu, Guo-Zhen; Botton, Gianluigi A.; Kitai, Adrian

2015-03-01

The growth mechanisms of high quality GaN thin films on 6H-SiC by sputtering were investigated by X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM). The XRD θ-2θ scans show that high quality ( 0002 ) oriented GaN was deposited on 6H-SiC by reactive magnetron sputtering. Pole figures obtained by 2D-XRD clarify that GaN thin films are dominated by ( 0002 ) oriented wurtzite GaN and { 111 } oriented zinc-blende GaN. A thin amorphous silicon oxide layer on SiC surfaces observed by STEM plays a critical role in terms of the orientation information transfer from the substrate to the GaN epilayer. The addition of H2 into Ar and/or N2 during sputtering can reduce the thickness of the amorphous layer. Moreover, adding 5% H2 into Ar can facilitate a phase transformation from amorphous to crystalline in the silicon oxide layer and eliminate the unwanted { 3 3 ¯ 02 } orientation in the GaN thin film. Fiber texture GaN thin films can be grown by adding 10% H2 into N2 due to the complex reaction between H2 and N2.

Surface potential barrier in m-plane GaN studied by contactless electroreflectance

NASA Astrophysics Data System (ADS)

Janicki, Lukasz; Misiewicz, Jan; Cywiński, Grzegorz; Sawicka, Marta; Skierbiszewski, Czeslaw; Kudrawiec, Robert

2016-02-01

Contactless electroreflectance (CER) is used to study the surface potential barrier in m-plane GaN UN+ [GaN (d = 20,30,50,70 nm)/GaN:Si] structures grown by using molecular beam epitaxy. Clear bandgap-related transitions followed by Franz-Keldysh oscillations (FKO) have been observed in the CER spectra of all samples at room temperature. The built-in electric fields in the undoped cap layers have been determined from the FKO period. From the built-in electric field and the undoped GaN layer thickness, the Fermi level location at the air-exposed m-plane GaN surface has been estimated as 0.42 ± 0.05 eV below the conduction band.

Polarity control of GaN epitaxial films grown on LiGaO2(001) substrates and its mechanism.

PubMed

Zheng, Yulin; Wang, Wenliang; Li, Xiaochan; Li, Yuan; Huang, Liegen; Li, Guoqiang

2017-08-16

The polarity of GaN epitaxial films grown on LiGaO 2 (001) substrates by pulsed laser deposition has been well controlled. It is experimentally proved that the GaN epitaxial films grown on nitrided LiGaO 2 (001) substrates reveal Ga-polarity, while the GaN epitaxial films grown on non-nitrided LiGaO 2 (001) substrates show N-polarity. The growth mechanisms for these two cases are systematically studied by first-principles calculations based on density functional theory. Theoretical calculation presents that the adsorption of a Ga atom preferentially occurs at the center of three N atoms stacked on the nitrided LiGaO 2 (001) substrates, which leads to the formation of Ga-polarity GaN. Whereas the adsorption of a Ga atom preferentially deposits at the top of a N atom stacked on the non-nitrided LiGaO 2 (001) substrates, which results in the formation of N-polarity GaN. This work of controlling the polarity of GaN epitaxial films is of paramount importance for the fabrication of group-III nitride devices for various applications.

Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choudhary, B. S.; Rajasthan Technical University, Rawatbhata Road, Kota 324010; Singh, A.

We have grown homoepitaxial GaN films on metal organic chemical vapor deposition (MOCVD) grown 3.5 µm thick GaN on sapphire (0001) substrate (GaN template) using an ultra-high vacuum (UHV) laser assisted molecular beam epitaxy (LMBE) system. The GaN films were grown by laser ablating a polycrystalline solid GaN target in the presence of active r.f. nitrogen plasma. The influence of laser repetition rates (10-30 Hz) on the surface morphology of homoepitaxial GaN layers have been studied using atomic force microscopy. It was found that GaN layer grown at 10 Hz shows a smooth surface with uniform grain size compared to the rough surfacemore » with irregular shape grains obtained at 30 Hz. The variation of surface roughness of the homoepitaxial GaN layer with and without wet chemical etching has been also studied and it was observed that the roughness of the film decreased after wet etching due to the curved structure/rough surface.« less

Sensitivity of Fermi level position at Ga-polar, N-polar, and nonpolar m-plane GaN surfaces to vacuum and air ambient

NASA Astrophysics Data System (ADS)

Janicki, Łukasz; Ramírez-López, Manolo; Misiewicz, Jan; Cywiński, Grzegorz; Boćkowski, Michał; Muzioł, Grzegorz; Chèze, Caroline; Sawicka, Marta; Skierbiszewski, Czesław; Kudrawiec, Robert

2016-05-01

Ga-polar, N-polar, and nonpolar m-plane GaN UN+ structures have been examined in air and vacuum ambient by contactless electroreflectance (CER). This technique is very sensitive to the surface electric field that varies with the Fermi level position at the surface. For UN+ GaN structures [i.e., GaN (undoped)/GaN (n-type)/substrate], a homogeneous built-in electric field is expected in the undoped GaN layer that is manifested by Franz-Keldysh oscillation (FKO) in CER spectra. A clear change in FKO has been observed in CER spectra for N-polar and nonpolar m-plane structures when changing from air to vacuum ambient. This means that those surfaces are very sensitive to ambient atmosphere. In contrast to that, only a small change in FKO can be seen in the Ga-polar structure. This clearly shows that the ambient sensitivity of the Fermi level position at the GaN surface varies with the crystallographic orientation and is very high for N-polar and nonpolar m-plane surfaces. This feature of the N-polar and nonpolar m-plane surfaces can be very important for GaN-based devices grown on these crystallographic orientations and can be utilized in some of the devices, e.g., sensors.

Nitridation- and Buffer-Layer-Free Growth of [1100]-Oriented GaN Domains on m-Plane Sapphire Substrates by Using Hydride Vapor Phase Epitaxy

NASA Astrophysics Data System (ADS)

Seo, Yeonwoo; Lee, Sanghwa; Jue, Miyeon; Yoon, Hansub; Kim, Chinkyo

2012-12-01

Over a wide range of growth conditions, GaN domains were grown on bare m-plane sapphire substrates by using hydride vapor phase epitaxy (HVPE), and the relation between these growth conditions and three possible preferred crystallographic orientations ([1100], [1103], [1122]) of GaN domains was investigated. In contrast with the previous reports by other groups, our results revealed that preferentially [1100]-oriented GaN domains were grown without low-temperature nitridation or a buffer layer, and that the growth condition of preferentially [1100]-oriented GaN was insensitive to V/III ratio.

Photochemical Modification of Single Crystalline GaN Film Using n-Alkene with Different Carbon Chain Lengths as Biolinker.

PubMed

Wang, Chun; Zhuang, Hao; Huang, Nan; Heuser, Steffen; Schlemper, Christoph; Zhai, Zhaofeng; Liu, Baodan; Staedler, Thorsten; Jiang, Xin

2016-06-14

As a potential material for biosensing applications, gallium nitride (GaN) films have attracted remarkable attention. In order to construct GaN biosensors, a corresponding immobilization of biolinkers is of great importance in order to render a surface bioactive. In this work, two kinds of n-alkenes with different carbon chain lengths, namely allylamine protected with trifluoroacetamide (TFAAA) and 10-aminodec-1-ene protected with trifluoroacetamide (TFAAD), were used to photochemically functionalize single crystalline GaN films. The successful linkage of both TFAAA and TFAAD to the GaN films is confirmed by time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurement. With increased UV illumination time, the intensity of the secondary ions corresponding to the linker molecules initially increases and subsequently decreases in both cases. Based on the SIMS measurements, the maximum coverage of TFAAA is achieved after 14 h of UV illumination, while only 2 h is required in the case of TFAAD to reach the situation of a fully covered GaN surface. This finding leads to the conclusion that the reaction rate of TFAAD is significantly higher compared to TFAAA. Measurements by atomic force microscopy (AFM) indicate that the coverage of GaN films by a TFAAA layer leads to an increased surface roughness. The atomic terraces, which are clearly observable for the pristine GaN films, disappear once the surface is fully covered by a TFAAA layer. Such TFAAA layers will feature a homogeneous surface topography even for reaction times of 24 h. In contrast to this, TFAAD shows strong cross-polymerization on the surface, this is confirmed by optical microscopy. These results demonstrate that TFAAA is a more suitable candidate as biolinker in context of the GaN surfaces due to its improved controllability.

Optical Properties of Wurtzite Semiconductors Studied Using Cathodoluminescence Imaging and Spectroscopy

NASA Astrophysics Data System (ADS)

Juday, Reid

The work contained in this dissertation is focused on the optical properties of direct band gap semiconductors which crystallize in a wurtzite structure: more specifically, the III-nitrides and ZnO. By using cathodoluminescence spectroscopy, many of their properties have been investigated, including band gaps, defect energy levels, carrier lifetimes, strain states, exciton binding energies, and effects of electron irradiation on luminescence. Part of this work is focused on p-type Mg-doped GaN and InGaN. These materials are extremely important for the fabrication of visible light emitting diodes and diode lasers and their complex nature is currently not entirely understood. The luminescence of Mg-doped GaN films has been correlated with electrical and structural measurements in order to understand the behavior of hydrogen in the material. Deeply-bound excitons emitting near 3.37 and 3.42 eV are observed in films with a significant hydrogen concentration during cathodoluminescence at liquid helium temperatures. These radiative transitions are unstable during electron irradiation. Our observations suggest a hydrogen-related nature, as opposed to a previous assignment of stacking fault luminescence. The intensity of the 3.37 eV transition can be correlated with the electrical activation of the Mg acceptors. Next, the acceptor energy level of Mg in InGaN is shown to decrease significantly with an increase in the indium composition. This also corresponds to a decrease in the resistivity of these films. In addition, the hole concentration in multiple quantum well light emitting diode structures is much more uniform in the active region when Mg-doped InGaN (instead of Mg-doped GaN) is used. These results will help improve the efficiency of light emitting diodes, especially in the green/yellow color range. Also, the improved hole transport may prove to be important for the development of photovoltaic devices. Cathodoluminescence studies have also been performed on nanoindented ZnO crystals. Bulk, single crystal ZnO was indented using a sub-micron spherical diamond tip on various surface orientations. The resistance to deformation (the "hardness") of each surface orientation was measured, with the c-plane being the most resistive. This is due to the orientation of the easy glide planes, the c-planes, being positioned perpendicularly to the applied load. The a-plane oriented crystal is the least resistive to deformation. Cathodoluminescence imaging allows for the correlation of the luminescence with the regions located near the indentation. Sub-nanometer shifts in the band edge emission have been assigned to residual strain the crystals. The a- and m-plane oriented crystals show two-fold symmetry with regions of compressive and tensile strain located parallel and perpendicular to the +/- c-directions, respectively. The c-plane oriented crystal shows six-fold symmetry with regions of tensile strain extending along the six equivalent a-directions.

Photo-assisted Kelvin probe force microscopy investigation of three dimensional GaN structures with various crystal facets, doping types, and wavelengths of illumination

NASA Astrophysics Data System (ADS)

Ali Deeb, Manal; Ledig, Johannes; Wei, Jiandong; Wang, Xue; Wehmann, Hergo-Heinrich; Waag, Andreas

2017-08-01

Three dimensional GaN structures with different crystal facets and doping types have been investigated employing the surface photo-voltage (SPV) method to monitor illumination-induced surface charge behavior using Kelvin probe force microscopy. Various photon energies near and below the GaN bandgap were used to modify the generation of electron-hole pairs and their motion under the influence of the electric field near the GaN surface. Fast and slow processes for Ga-polar c-planes on both Si-doped n-type as well as Mg-doped p-type GaN truncated pyramid micro-structures were found and their origin is discussed. The immediate positive (for n-type) and negative (for p-type) SPV response dominates at band-to-band and near-bandgap excitation, while only the slow process is present at sub-bandgap excitation. The SPV behavior for the semi-polar facets of the p-type GaN truncated pyramids has a similar characteristic to that on its c-plane, which indicates that it has a comparable band bending and no strong influence of the polarity-induced charges is detectable. The SPV behavior of the non-polar m-facets of the Si-doped n-type part of a transferred GaN column is similar to that of a clean c-plane GaN surface during illumination. However, the SPV is smaller in magnitude, which is attributed to intrinsic surface states of m-plane surfaces and their influence on the band bending. The SPV behavior of the non-polar m-facet of the slightly Mg-doped part of this GaN column is found to behave differently. Compared to c- and r-facets of p-type surfaces of GaN-light-emitting diode micro-structures, the m-plane is more chemically stable.

Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.

PubMed

Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

2016-02-10

We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1-100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting.

Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer.

PubMed

Song, Jie; Han, Jung

2017-03-02

We demonstrate growing nitrogen-polar (N-polar) GaN epilayer on c-plane sapphire using a thin AlN buffer layer by metalorganic chemical vapor deposition. We have studied the influence of the AlN buffer layer on the polarity, crystalline quality, and surface morphology of the GaN epilayer and found that the growth temperature of the AlN buffer layer played a critical role in the growth of the GaN epilayer. The low growth temperature of the AlN buffer results in gallium-polar GaN. Even a nitridation process has been conducted. High growth temperature for an AlN buffer layer is required to achieve pure N-polarity, high crystalline quality, and smooth surface morphology for a GaN epilayer.

Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

NASA Astrophysics Data System (ADS)

Deng, Gaoqiang; Zhang, Yuantao; Yu, Ye; Yan, Long; Li, Pengchong; Han, Xu; Chen, Liang; Zhao, Degang; Du, Guotong

2018-04-01

In this paper, N-polar GaN films with different V/III ratios were grown on vicinal C-face SiC substrates by metalorganic chemical vapor deposition. During the growth of N-polar GaN film, the V/III ratio was controlled by adjusting the molar flow rate of ammonia while keeping the trimethylgallium flow rate unchanged. The influence of the V/III ratio on the surface morphology of N-polar GaN film has been studied. We find that the surface root mean square roughness of N-polar GaN film over an area of 20 × 20 μm2 can be reduced from 8.13 to 2.78 nm by optimization of the V/III ratio. Then, using the same growth conditions, N-polar InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) were grown on the rough and the smooth N-polar GaN templates, respectively. Compared with the LED grown on the rough N-polar GaN template, dramatically improved interface sharpness and luminescence uniformity of the InGaN/GaN MQWs are achieved for the LED grown on the smooth N-polar GaN template.

Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Komae, Yasuaki; Yasui, Kanji; Suemitsu, Maki; Endoh, Tetsuo; Ito, Takashi; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

2009-07-01

Intermittent gas supplies for hot-mesh chemical vapor deposition (CVD) for the epitaxial growth of gallium nitride (GaN) films were investigated to improve film crystallinity and optical properties. The GaN films were deposited on SiC/Si(111) substrates using an alternating-source gas supply or an intermittent supply of source gases such as ammonia (NH3) and trimethylgallium (TMG) in hot-mesh CVD after deposition of an aluminum nitride (AlN) buffer layer. The AlN layer was deposited using NH3 and trimethylaluminum (TMA) on a SiC layer grown by carbonization of a Si substrate using propane (C3H8). GaN films were grown on the AlN layer by a reaction between NHx radicals generated on a ruthenium (Ru)-coated tungsten (W) mesh and TMG molecules. After testing various gas supply modes, GaN films with good crystallinity and surface morphology were obtained using an intermittent supply of TMG and a continuous supply of NH3 gas. An optimal interval for the TMG gas supply was also obtained for the apparatus employed.

A Rapid Method for Deposition of Sn-Doped GaN Thin Films on Glass and Polyethylene Terephthalate Substrates

NASA Astrophysics Data System (ADS)

Pat, Suat; Özen, Soner; Korkmaz, Şadan

2018-01-01

We report the influence of Sn doping on microstructure, surface, and optical properties of GaN thin films deposited on glass and polyethylene terephthalate (PET) substrate. Sn-doped GaN thin films have been deposited by thermionic vacuum arc (TVA) at low temperature. TVA is a rapid deposition technology for thin film growth. Surface and optical properties of the thin films were presented. Grain size, height distribution, roughness values were determined. Grain sizes were calculated as 20 nm and 13 nm for glass and PET substrates, respectively. Nano crystalline forms were shown by field emission scanning electron microscopy. Optical band gap values were determined by optical methods and photoluminescence measurement. The optical band gap values of Sn doped GaN on glass and PET were determined to be approximately ˜3.40 eV and ˜3.47 eV, respectively. As a result, TVA is a rapid and low temperature deposition technology for the Sn doped GaN deposited on glass and PET substrate.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolat, S., E-mail: bolat@ee.bilkent.edu.tr, E-mail: aokyay@ee.bilkent.edu.tr; Tekcan, B.; UNAM, National Nanotechnology Research Center, Bilkent University, Ankara 06800

We report GaN thin film transistors (TFT) with a thermal budget below 250 °C. GaN thin films are grown at 200 °C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found to have a polycrystalline wurtzite structure with an average crystallite size of 9.3 nm. TFTs with bottom gate configuration are fabricated with HCPA-ALD grown GaN channel layers. Fabricated TFTs exhibit n-type field effect characteristics. N-channel GaN TFTs demonstrated on-to-off ratios (I{sub ON}/I{sub OFF}) of 10{sup 3} and sub-threshold swing of 3.3 V/decade. The entire TFT device fabrication process temperature is below 250 °C, which is the lowest process temperaturemore » reported for GaN based transistors, so far.« less

P-type doping of GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wong, Raechelle Kimberly

2000-04-01

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C.more » The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.« less

Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films

NASA Astrophysics Data System (ADS)

Yang, J.; Zhao, D. G.; Jiang, D. S.; Chen, P.; Liu, Z. S.; Le, L. C.; Li, X. J.; He, X. G.; Liu, J. P.; Zhang, S. M.; Wang, H.; Zhu, J. J.; Yang, H.

2014-04-01

The influence of unintentionally doped carbon impurities on electrical resistivity and yellow luminescence (YL) of low-temperature (LT) grown Mg doped GaN films is investigated. It is found that the resistivity of Mg doped GaN films are closely related to the residual carbon impurity concentration, which may be attributed to the compensation effect of carbon impurities. The carbon impurity may preferentially form deep donor complex CN-ON resulting from its relatively low formation energy. This complex is an effective compensate center for MgGa acceptors as well as inducing YL in photoluminescence spectra. Thus, the low resistivity LT grown p-type GaN films can be obtained only when the residual carbon impurity concentration is sufficiently low, which can explain why LT P-GaN films with lower resistivity were obtained more easily when relatively higher pressure, temperature, or NH3/TMGa flow rate ratio were used in the LT grown Mg doped GaN films reported in earlier reports.

Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates.

PubMed

Huang, Kai; Jia, Qi; You, Tiangui; Zhang, Runchun; Lin, Jiajie; Zhang, Shibin; Zhou, Min; Zhang, Bo; Yu, Wenjie; Ou, Xin; Wang, Xi

2017-11-08

Die-to-wafer heterogeneous integration of single-crystalline GaN film with CMOS compatible Si(100) substrate using the ion-cutting technique has been demonstrated. The thermodynamics of GaN surface blistering is in-situ investigated via a thermal-stage optical microscopy, which indicates that the large activation energy (2.5 eV) and low H ions utilization ratio (~6%) might result in the extremely high H fluence required for the ion-slicing of GaN. The crystalline quality, surface topography and the microstructure of the GaN films are characterized in detail. The full width at half maximum (FWHM) for GaN (002) X-ray rocking curves is as low as 163 arcsec, corresponding to a density of threading dislocation of 5 × 10 7  cm -2 . Different evolution of the implantation-induced damage was observed and a relationship between the damage evolution and implantation-induced damage is demonstrated. This work would be beneficial to understand the mechanism of ion-slicing of GaN and to provide a platform for the hybrid integration of GaN devices with standard Si CMOS process.

Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lotsari, A.; Kehagias, Th.; Katsikini, M.

2014-06-07

Heteroepitaxial non-polar III-Nitride layers may exhibit extensive anisotropy in the surface morphology and the epilayer microstructure along distinct in-plane directions. The structural anisotropy, evidenced by the “M”-shape dependence of the (112{sup ¯}0) x-ray rocking curve widths on the beam azimuth angle, was studied by combining transmission electron microscopy observations, Raman spectroscopy, high resolution x-ray diffraction, and atomic force microscopy in a-plane GaN epilayers grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). The structural anisotropic behavior was attributed quantitatively to the high dislocation densities, particularly the Frank-Shockley partial dislocations that delimit the I{sub 1} intrinsic basal stacking faults,more » and to the concomitant plastic strain relaxation. On the other hand, isotropic samples exhibited lower dislocation densities and a biaxial residual stress state. For PAMBE growth, the anisotropy was correlated to N-rich (or Ga-poor) conditions on the surface during growth, that result in formation of asymmetric a-plane GaN grains elongated along the c-axis. Such conditions enhance the anisotropy of gallium diffusion on the surface and reduce the GaN nucleation rate.« less

Process for growing epitaxial gallium nitride and composite wafers

DOEpatents

Weber, Eicke R.; Subramanya, Sudhir G.; Kim, Yihwan; Kruger, Joachim

2003-05-13

A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.

Growth of Y3Fe5O12/GaN layers by laser molecular-beam epitaxy and characterization of their structural and magnetic properties

NASA Astrophysics Data System (ADS)

Kaveev, A. K.; Bursian, V. E.; Gastev, S. V.; Krichevtsov, B. B.; Suturin, S. M.; Volkov, M. P.; Sokolov, N. S.

2016-12-01

Laser molecular-beam epitaxy has been employed to obtain layers of yttrium-iron garnet (YIG) Y3Fe5O12 on gallium nitride substrates. It was found that there exists a polycrystalline YIG phase without admixtures of other structural phases. A magnetic anisotropy of films of the "easy-magnetic plane" type was found. The gyromagnetic ratio and the demagnetizing field 4π M S were calculated.

Nitride Semiconductors for Ultraviolet Detection

DTIC Science & Technology

1992-12-01

intrinsic n- and p-type doped GaN, (4) deposition of monocrystalline GaN via atomic layer epitaxy, (5) the initial conduct of studies regarding the ion...crystalline quality of the films; it indicated that all the films for x ranging from I to 0 to be monocrystalline . The Al/Ga composition ratios in the...shown in Figure 1. An analysis of these RHEED patterns indicated that both the AIN buffer layer and the GaN film are monocrystalline films. The RHEED

High Quality, Low Cost Bulk Gallium Nitride Substrates Grown by the Electrochemical Solution Growth Method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seacrist, Michael

The objective of this project was to develop the Electrochemical Solution Growth (ESG) method conceived / patented at Sandia National Laboratory into a commercially viable bulk gallium nitride (GaN) growth process that can be scaled to low cost, high quality, and large area GaN wafer substrate manufacturing. The goal was to advance the ESG growth technology by demonstrating rotating seed growth at the lab scale and then transitioning process to prototype commercial system, while validating the GaN material and electronic / optical device quality. The desired outcome of the project is a prototype commercial process for US-based manufacturing of highmore » quality, large area, and lower cost GaN substrates that can drive widespread deployment of energy efficient GaN-based power electronic and optical devices. In year 1 of the project (Sept 2012 – Dec 2013) the overall objective was to demonstrate crystalline GaN growth > 100um on a GaN seed crystal. The development plan included tasks to demonstrate and implement a method for purifying reagent grade salts, develop the reactor 1 process for rotating seed Electrochemical Solution Growth (ESG) of GaN, grow and characterize ESG GaN films, develop a fluid flow and reaction chemistry model for GaN film growth, and design / build an improved growth reactor capable of scaling to 50mm seed diameter. The first year’s project objectives were met in some task areas including salt purification, film characterization, modeling, and reactor 2 design / fabrication. However, the key project objective of the growth of a crystalline GaN film on the seed template was not achieved. Amorphous film growth on the order of a few tenths of a micron has been detected with a film composition including Ga and N, plus several other impurities originating from the process solution and hardware. The presence of these impurities, particularly the oxygen, has inhibited the demonstration of crystalline GaN film growth on the seed template. However, the presence of both Ga and N at the growth surface indicates that the reactor hardware physics is all functioning properly; achieving film growth is a matter of controlling the chemistry at the interface. The impurities originating from the hardware are expected to be straightforward to eliminate. Activities were defined for an extension of budget period 1 to eliminate the undesired impurities originating from the reactor hardware and interfering with crystalline GaN film growth. The budget period 1 extension was negotiated during the 1st half of 2014. The budget period 1 extension spanned approximately from August 2014 to August 2015. The project objective for this extension period was to demonstrate at least 0.5um crystalline GaN film on a GaN seed in the lab scale reactor. The focus of the budget 1 extension period from August 2014 to August 2015 was to eliminate oxygen contamination interference with GaN film growth. The team procured the highest purity lowest oxygen salt for testing. Low oxygen crucible materials such as silicon carbide were installed and evaluated in the laboratory reactor. Growth experiments were performed with high purity salt, high purity hardware, and optimized oxide removal from the seed surface. Experiments were characterized with methods including UV inspection, profilometry, x-ray diffraction (XRD) to determine crystalline structure, optical and scanning electron microscopy, photoluminescence, x-ray photon spectroscopy (XPS), transmission electron microscopy (TEM), and secondary ion mass spectroscopy (SIMS). Despite successfully integrating the low oxygen materials in the laboratory reactor, the goal of depositing 0.5um of crystalline GaN on the MOCVD GaN seed was not met. Very thin (ca. 10nm) cubic phase GaN deposition was observed on the hexagonal MOCVD GaN seeds. But there was a competing etching reaction which was also observed and thought to be related to the presence of metallic lithium, a byproduct of the LiCl-KCl salt used as the process medium. The etching reaction could potentially be addressed by alternate salts not containing lithium, but would necessitate starting all over on the reactor and process design. Further, controlling the reaction of Ga and N in the bulk salt to favor deposition on the seed has proved to be very difficult and unlikely to be solved within the scope of this project in a manner consistent with the original objective for wafer or crystal scale thickness for GaN deposition on a GaN seed. Upon completion of the budget 1 extension period in August 2015 the project partners and DOE agreed to stop work on the project.« less

Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE.

PubMed

Zhong, Aihua; Fan, Ping; Zhong, Yuanting; Zhang, Dongping; Li, Fu; Luo, Jingting; Xie, Yizhu; Hane, Kazuhiro

2018-02-13

Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE). As is expected, growth of the GaN nanocolumns was observed in N-rich condition on bare Si, and the growth shifted to compact film when the Ga flux was improved. Interestingly, if an aluminum (Al) pre-deposition for 40 s was carried out prior to the GaN growth, GaN grows in the form of the nanowall network. Results show that the pre-deposited Al exits in the form of droplets with typical diameter and height of ~ 80 and ~ 6.7 nm, respectively. A growth model for the nanowall network is proposed and the growth mechanism is discussed. GaN grows in the area without Al droplets while the growth above Al droplets is hindered, resulting in the formation of continuous GaN nanowall network that removes the obstacles of nano-device fabrication.

Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE

NASA Astrophysics Data System (ADS)

Zhong, Aihua; Fan, Ping; Zhong, Yuanting; Zhang, Dongping; Li, Fu; Luo, Jingting; Xie, Yizhu; Hane, Kazuhiro

2018-02-01

Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE). As is expected, growth of the GaN nanocolumns was observed in N-rich condition on bare Si, and the growth shifted to compact film when the Ga flux was improved. Interestingly, if an aluminum (Al) pre-deposition for 40 s was carried out prior to the GaN growth, GaN grows in the form of the nanowall network. Results show that the pre-deposited Al exits in the form of droplets with typical diameter and height of 80 and 6.7 nm, respectively. A growth model for the nanowall network is proposed and the growth mechanism is discussed. GaN grows in the area without Al droplets while the growth above Al droplets is hindered, resulting in the formation of continuous GaN nanowall network that removes the obstacles of nano-device fabrication.

On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

DOE Office of Scientific and Technical Information (OSTI.GOV)

Voronenkov, V. V.; Virko, M. V.; Kogotkov, V. S.

The intense absorption of CO{sub 2} laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the detachment of GaN films from the sapphire. The threshold density of the laser energy at which n-GaN started to dissociate is 1.6 ± 0.5 J/cm{sup 2}. The mechanical-stress distribution and the surface morphology of GaN films and sapphire substrates before and after laser lift-off are studied by Raman spectroscopy, atomic-force microscopy, and scanning electron microscopy. A verticalmore » Schottky diode with a forward current density of 100 A/cm{sup 2} at a voltage of 2 V and a maximum reverse voltage of 150 V is fabricated on the basis of a 9-μm-thick detached n-GaN film.« less

Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kvit, A. V.; Yankovich, A. B.; Avrutin, V.; Liu, H.; Izyumskaya, N.; Özgür, Ü.; Morkoç, H.; Voyles, P. M.

2012-12-01

We report microstructural characterization of heavily Ga-doped ZnO (GZO) thin films on GaN and sapphire by aberration-corrected scanning transmission electron microscopy. Growth under oxygen-rich and metal-rich growth conditions leads to changes in the GZO polarity and different extended defects. For GZO layers on sapphire, the primary extended defects are voids, inversion domain boundaries, and low-angle grain boundaries. Ga doping of ZnO grown under metal-rich conditions causes a switch from pure oxygen polarity to mixed oxygen and zinc polarity in small domains. Electron energy loss spectroscopy and energy dispersive spectroscopy spectrum imaging show that Ga is homogeneous, but other residual impurities tend to accumulate at the GZO surface and at extended defects. GZO grown on GaN on c-plane sapphire has Zn polarity and no voids. There are misfit dislocations at the interfaces between GZO and an undoped ZnO buffer layer and at the buffer/GaN interface. Low-angle grain boundaries are the only threading microstructural defects. The potential effects of different extended defects and impurity distributions on free carrier scattering are discussed.

High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

NASA Astrophysics Data System (ADS)

Arakawa, Yasuaki; Ueno, Kohei; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

2016-08-01

We have grown Mg-doped GaN films with low residual hydrogen concentration using a low-temperature pulsed sputtering deposition (PSD) process. The growth system is inherently hydrogen-free, allowing us to obtain high-purity Mg-doped GaN films with residual hydrogen concentrations below 5 × 1016 cm-3, which is the detection limit of secondary ion mass spectroscopy. In the Mg profile, no memory effect or serious dopant diffusion was detected. The as-deposited Mg-doped GaN films showed clear p-type conductivity at room temperature (RT) without thermal activation. The GaN film doped with a low concentration of Mg (7.9 × 1017 cm-3) deposited by PSD showed hole mobilities of 34 and 62 cm2 V-1 s-1 at RT and 175 K, respectively, which are as high as those of films grown by a state-of-the-art metal-organic chemical vapor deposition apparatus. These results indicate that PSD is a powerful tool for the fabrication of GaN-based vertical power devices.

Stacking fault effects in Mg-doped GaN

NASA Astrophysics Data System (ADS)

Schmidt, T. M.; Miwa, R. H.; Orellana, W.; Chacham, H.

2002-01-01

First-principles total energy calculations are performed to investigate the interaction of a stacking fault with a p-type impurity in both zinc-blende and wurtzite GaN. For both structures we find that, in the presence of a stacking fault, the impurity level is a more localized state in the band gap. In zinc-blende GaN, the minimum energy position of the substitutional Mg atom is at the plane of the stacking fault. In contrast, in wurtzite GaN the substitutional Mg atom at the plane of the stacking fault is a local minimum and the global minimum is the substitutional Mg far from the fault. This behavior can be understood as a packing effect which induces a distinct strain relief process, since the local structure of the stacking fault in zinc-blende GaN is similar to fault-free wurtzite GaN and vice-versa.

Effects of strain and thickness on the electronic and optical behaviors of two-dimensional hexagonal gallium nitride

NASA Astrophysics Data System (ADS)

Behzad, Somayeh

2017-06-01

The full potential linearized augmented plane wave (FP-LAPW) method within the framework of density functional theory has been used to study effects of strain and thickness on the electronic and optical properties of two-dimensional GaN. The band gap of monolayer and bilayer GaN under compressive in-plane strain change from indirect to direct with bond length shortening. Also, the semiconductor to semimetal transition occurs for monolayer and bilayer GaN under in-plane tensile strain with bond length elongation. It is found that the tensile and compressive strains cause the red and blue shifts in the optical spectra, respectively, for both monolayer and bilayer GaN. Applying the perpendicular strain on the bilayer GaN by decreasing the inter layer distance leads to the shift of valence band maximum towards the Γ point in the band structure and shift of peak positions and variation of peak intensities in ε2(ω) spectrum. The results show that the n-layer GaN has an indirect band gap for n < 16. The results suggest that monolayer and multilayer GaN are good candidates for application in optoelectronics and flexible electronics.

High power blue laser diodes on semipolar (202¯1¯) GaN substrates

NASA Astrophysics Data System (ADS)

Pourhashemi, Seyed Arash

High power blue laser didoes (LDs), among other applications, show the promise of realizing efficient and reliable solid state lighting systems. Since first GaN optoelectronic devices were demonstrated in early 1990s, GaN LDs were traditionally fabricated on polar c-plane. However in recent years there has been a growing interest in nonpolar and semipolar planes. Nonpolar and semipolar devices offer the prospect of achieving higher efficiencies though elimination or reduction of polarization-related electric fields. In this project I investigated semipolar (202 ¯1 ¯) plane of GaN for blue LDs fabrication. Results include blue LD (Lambda=450 nm) with highest output power, differential quantum efficiency (?d) and external quantum efficiency (EQE) reported for a GaN LD on a semipolar plane to date. Output power of 2.52 W, etad=50% and EQE=39% were achieved in pulsed mode and output power of 1.71 W was achieved in true CW mode. Moreover, use of indium tin oxide (ITO) as cladding layer in order to reduce the thickness of Mg-doped p-GaN layer was investigated. Blue LDs with ITO cladding were demonstrated in this work with highest output power, etad and EQE reported for a GaN LD with transparent conducting oxide (TCO) cladding layer to date. The lack of any natural cleavage plane orthogonal to the in-plane projection of the c-axis on semipolar planes has made Cl2-based dry etch processes the most common way to form mirror facets for semipolar LDs. However, mirror facets fabricated by dry etching can be inclined or rough. For this work, mechanical polishing was used to form LD mirror facets. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high power CW semipolar LDs.

Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sung Bo, E-mail: bolee@snu.ac.kr; Han, Heung Nam, E-mail: hnhan@snu.ac.kr; Lee, Dong Nyung

Much research has been done to reduce dislocation densities for the growth of GaN on sapphire, but has paid little attention to the elastic behavior at the GaN/sapphire interface. In this study, we have examined effects of the addition of Si to a sapphire substrate on its elastic property and on the growth of GaN deposit. Si atoms are added to a c-plane sapphire substrate by ion implantation. The ion implantation results in scratches on the surface, and concomitantly, inhomogeneous distribution of Si. The scratch regions contain a higher concentration of Si than other regions of the sapphire substrate surface,more » high-temperature GaN being poorly grown there. However, high-temperature GaN is normally grown in the other regions. The GaN overlayer in the normally-grown regions is observed to have a lower TD density than the deposit on the bare sapphire substrate (with no Si accommodated). As compared with the film on an untreated, bare sapphire, the cathodoluminescence defect density decreases by 60 % for the GaN layer normally deposited on the Si-ion implanted sapphire. As confirmed by a strain mapping technique by transmission electron microscopy (geometric phase analysis), the addition of Si in the normally deposited regions forms a surface layer in the sapphire elastically more compliant than the GaN overlayer. The results suggest that the layer can largely absorb the misfit strain at the interface, which produces the overlayer with a lower defect density. Our results highlight a direct correlation between threading-dislocation density in GaN deposits and the elastic behavior at the GaN/sapphire interface, opening up a new pathway to reduce threading-dislocation density in GaN deposits.« less

Codoping characteristics of Zn with Mg in GaN

NASA Astrophysics Data System (ADS)

Kim, K. S.; Han, M. S.; Yang, G. M.; Youn, C. J.; Lee, H. J.; Cho, H. K.; Lee, J. Y.

2000-08-01

The doping characteristics of Mg-Zn codoped GaN films grown by metalorganic chemical vapor deposition are investigated. By means of the concept of Mg-Zn codoping technique, we have grown p-GaN showing a low electrical resistivity (0.72 Ω cm) and a high hole concentration (8.5×1017cm-3) without structural degradation of the film. It is thought that the codoping of Zn atoms with Mg raises the Mg activation ratio by reducing the hydrogen solubility in p-GaN. In addition, the measured specific contact resistance of Mg-Zn codoped GaN film is 5.0×10-4 Ω cm2, which is one order of magnitude lower than that of Mg doped only GaN film (1.9×10-3 Ω cm2).

Effect of growth pressure on the morphology evolution and doping characteristics in nonpolar a-plane GaN

NASA Astrophysics Data System (ADS)

Song, Keun Man; Kim, Jong Min; Kang, Bong Kyun; Shin, Chan Soo; Ko, Chul Gi; Kong, Bo Hyun; Cho, Hyung Koun; Yoon, Dae Ho; Kim, Hogyoung; Hwang, Sung Min

2012-02-01

Nonpolar a-plane GaN layers grown on r-plane sapphire substrates were examined by using a two-step growth process. The higher initial growth pressure for the nucleation layer resulted in the improved crystalline quality with lower density of both threading dislocations and basal stacking faults. This was attributed to the higher degree of initial roughening and recovery time via a growth mode transition from three-dimensional (3D) to quasi two-dimensional (2D) lateral growth. Using Hall-effect measurements, the overgrown Si doped GaN layers grown with higher initial growth pressure were found to have higher mobility. The scattering mechanism due to the dislocations was dominant especially at low temperature (<200 K) for the lower initial growth pressure, which was insignificant for the higher initial growth pressure. The temperature-dependent Hall-effect measurements for the Mg doped GaN with a higher initial growth pressure yielded the activation energy and the acceptor concentration to be 128 meV and 1.2 × 1019 cm-3, respectively, corresponding to about 3.6% of activation at room temperature. Two-step growth scheme with a higher initial growth pressure is suggested as a potential method to improve the performance of nonpolar a-plane GaN based devices.

Harmonic surface acoustic waves on gallium nitride thin films.

PubMed

Justice, Joshua; Lee, Kyoungnae; Korakakis, D

2012-08-01

SAW devices operating at the fundamental frequency and the 5th, 7th, 9th, and 11th harmonics have been designed, fabricated, and measured. Devices were fabricated on GaN thin films on sapphire substrates, which were grown via metal organic vapor phase epitaxy (MOVPE). Operating frequencies of 230, 962, 1338, 1720, and 2100 MHz were achieved with devices that had a fundamental wavelength, lambda0 = 20 μm. Gigahertz operation is realized with relatively large interdigital transducers that do not require complicated submicrometer fabrication techniques. SAW devices fabricated on the GaN/sapphire bilayer have an anisotropic propagation when the wavelength is longer than the GaN film thickness. It is shown that for GaN thin films, where kh(GaN) > 10 (k = 2pi/lambda and h(GaN) = GaN film thickness), effects of the substrate on the SAW propagation are eliminated. Bulk mode suppression at harmonic operation is also demonstrated.

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate

PubMed Central

2013-01-01

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques. PMID:23448090

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate.

PubMed

Wei, Xianqi; Zhao, Ranran; Shao, Minghui; Xu, Xijin; Huang, Jinzhao

2013-02-28

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques.

MOCVD growth and study of thin films of indium nitride

NASA Astrophysics Data System (ADS)

Jain, Abhishek

This thesis is focused on a study of MOCVD growth of InN with the goal of providing new information on the effects of growth conditions and buffer/substrate materials on InN film properties. Initial studies, using both (111) Si and (0001) sapphire substrates, identified an optimum growth temperature window of 540--560°C for the formation of stable InN films. When attempting to grow InN films on sapphire with thicknesses greater than approximately 150 nanometers using an AlN buffer layer, the InN films were observed to delaminate from the buffer/substrate at growth temperature. The combined effect of compressive stress due to high lattice mismatch between InN and AlN (˜14%) and tensile stress due to grain coalescence along with the relatively weak bond strength of InN compared to GaN and AlN, is believed to cause the InN film to crack along the interface and delaminate. To further investigate the effect of the buffer layer on InN growth, studies were carried out using GaN films grown on sapphire as the growth template. Recent MBE results had indicated a significant difference in the thermal stability and growth mode of In-polar and N-polar InN, with improved properties reported for N-polar material grown on N-polar GaN. MOCVD growth of N-polar GaN is very difficult; consequently, all of the results reported in the literature for InN growth on GaN were likely carried out on Ga-polar material resulting in films with a high surface roughness. By utilizing N-polar and Ga-polar GaN films, it was possible to produce N-polar and In-polar InN films by MOCVD, as determined by convergent beam electron diffraction (CBED) analysis. Furthermore, the polarity was found to dramatically alter the surface roughness and growth mode of the InN films with enhanced lateral growth and reduced surface roughness obtained for N-polar InN. A qualitative model was proposed to explain the different growth mechanisms observed for In-polar and N-polar InN. In spite of the improvements in surface morphology obtained with growth of N-polar InN, delamination at the InN/GaN interface was still observed in these films, and was also present in In-polar InN samples. Attempts were made to further reduce the lattice mismatch and improve the adhesion between InN and GaN by using a compositionally graded InGaN buffer layer. The fabrication of InGaN over its entire composition range is challenging since the optimal growth parameters window for InGaN varies with composition and film quality is strongly dependent on temperature and precursor flow rates. The structural properties of the InN films grown on the graded InGaN layers were comparable to films grown directly on GaN, however, the film adhesion was significantly improved with no evidence of interfacial cracks between the InN and GaN. These preliminary results indicate that graded InGaN layers can be used to improve the adhesion of InN on both Ga-polar and N-polar GaN, however, further work is needed to develop graded InGaN buffer layers or constant composition InGaN interlayers with improved structural properties for InN growth. (Abstract shortened by UMI.)

Comparison of trimethylgallium and triethylgallium as “Ga” source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alevli, Mustafa, E-mail: mustafaalevli@marmara.edu.tr; Haider, Ali; Kizir, Seda

2016-01-15

GaN films grown by hollow cathode plasma-assisted atomic layer deposition using trimethylgallium (TMG) and triethylgallium (TEG) as gallium precursors are compared. Optimized and saturated TMG/TEG pulse widths were used in order to study the effect of group-III precursors. The films were characterized by grazing incidence x-ray diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry. Refractive index follows the same trend of crystalline quality, mean grain, and crystallite sizes. GaN layers grown using TMG precursor exhibited improved structural and optical properties when compared to GaN films grown with TEG precursor.

Monolithic photonic integrated circuit with a GaN-based bent waveguide

NASA Astrophysics Data System (ADS)

Cai, Wei; Qin, Chuan; Zhang, Shuai; Yuan, Jialei; Zhang, Fenghua; Wang, Yongjin

2018-06-01

Integration of a transmitter, waveguide and receiver into a single chip can generate a multicomponent system with multiple functionalities. Here, we fabricate and characterize a GaN-based photonic integrated circuit (PIC) on a GaN-on-silicon platform. With removal of the silicon and back wafer thinning of the epitaxial film, ultrathin membrane-type devices and highly confined suspended GaN waveguides were formed. Two suspended-membrane InGaN/GaN multiple-quantum-well diodes (MQW-diodes) served as an MQW light-emitting diode (MQW-LED) to emit light and an MQW photodiode (MQW-PD) to sense light. The optical interconnects between the MQW-LED and MQW-PD were achieved using the GaN bent waveguide. The GaN-based PIC consisting of an MQW-LED, waveguides and an MQW-PD forms an in-plane light communication system with a data transmission rate of 70 Mbps.

Optical nonlinearities and ultrafast all-optical switching of m-plane GaN in the near-infrared

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, Yu; Zhou, Feng; Yang, Junyi

2015-06-22

We reported a systematic investigation on the three-photon absorption (3PA) spectra and wavelength dispersion of Kerr refraction of bulk m-plane GaN crystal with both polarization E⊥c and E//c by femtosecond Z-scan technique in the near-infrared region from 760 to 1030 nm. Both 3PA spectra and Kerr refraction dispersion were in good agreement with two-band models. The calculated nonlinear figure of merit and measured ultrafast nonlinear refraction dynamics via femtosecond pump-probe with phase object method revealed that m-plane GaN would be a promising candidate for ultrafast all-optical switching and autocorrelation applications at telecommunication wavelengths.

Improvement of optical quality of semipolar (11 2 ¯ 2 ) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth

NASA Astrophysics Data System (ADS)

Monavarian, Morteza; Izyumskaya, Natalia; Müller, Marcus; Metzner, Sebastian; Veit, Peter; Can, Nuri; Das, Saikat; Özgür, Ümit; Bertram, Frank; Christen, Jürgen; Morkoç, Hadis; Avrutin, Vitaliy

2016-04-01

Among the major obstacles for development of non-polar and semipolar GaN structures on foreign substrates are stacking faults which deteriorate the structural and optical quality of the material. In this work, an in-situ SiNx nano-network has been employed to achieve high quality heteroepitaxial semipolar (11 2 ¯ 2 ) GaN on m-plane sapphire with reduced stacking fault density. This approach involves in-situ deposition of a porous SiNx interlayer on GaN that serves as a nano-mask for the subsequent growth, which starts in the nanometer-sized pores (window regions) and then progresses laterally as well, as in the case of conventional epitaxial lateral overgrowth (ELO). The inserted SiNx nano-mask effectively prevents the propagation of defects, such as dislocations and stacking faults, in the growth direction and thus reduces their density in the overgrown layers. The resulting semipolar (11 2 ¯ 2 ) GaN layers exhibit relatively smooth surface morphology and improved optical properties (PL intensity enhanced by a factor of 5 and carrier lifetimes by 35% to 85% compared to the reference semipolar (11 2 ¯ 2 ) GaN layer) which approach to those of the c-plane in-situ nano-ELO GaN reference and, therefore, holds promise for light emitting and detecting devices.

High-quality GaN epitaxially grown on Si substrate with serpentine channels

NASA Astrophysics Data System (ADS)

Wei, Tiantian; Zong, Hua; Jiang, Shengxiang; Yang, Yue; Liao, Hui; Xie, Yahong; Wang, Wenjie; Li, Junze; Tang, Jun; Hu, Xiaodong

2018-06-01

A novel serpentine-channeled mask was introduced to Si substrate for low-dislocation GaN epitaxial growth and the fully coalesced GaN film on the masked Si substrate was achieved for the first time. Compared with the epitaxial lateral overgrowth (ELOG) growth method, this innovative mask only requires one-step epitaxial growth of GaN which has only one high-dislocation region per mask opening. This new growth method can effectively reduce dislocation density, thus improving the quality of GaN significantly. High-quality GaN with low dislocation density ∼2.4 × 107 cm-2 was obtained, which accounted for about eighty percent of the GaN film in area. This innovative technique is promising for the growth of high-quality GaN templates and the subsequent fabrication of high-performance GaN-based devices like transistors, laser diodes (LDs), and light-emitting diodes (LEDs) on Si substrate.

Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

NASA Astrophysics Data System (ADS)

Lu, Yuan; Cong, Guangwei; Liu, Xianglin; Lu, Da-Cheng; Zhu, Qinsheng; Wang, Xiaohui; Wu, Jiejun; Wang, Zhanguo

2004-11-01

GaN epilayers were grown on Si(111) substrate by metalorganic chemical vapor deposition. By using the Al-rich AlN buffer which contains Al beyond stoichiometry, crack-free GaN epilayers with 1 μm thickness were obtained. Through x-ray diffraction (XRD) and secondary ion mass spectroscopy analyses, it was found that a lot of Al atoms have diffused into the under part of the GaN epilayer from the Al-rich AlN buffer, which results in the formation of an AlxGa1-xN layer at least with 300 nm thickness in the 1 μm thick GaN epilayer. The Al fraction x was estimated by XRD to be about 2.5%. X-ray photoelectron spectroscopy depth analysis was also applied to investigate the stoichiometry in the Al-rich buffer before GaN growth. It is suggested that the underlayer AlxGa1-xN originated from Al diffusion probably provides a compressive stress to the upper part of the GaN epilayer, which counterbalances a part of tensile stress in the GaN epilayer during cooling down and consequently reduces the cracks of the film effectively. The method using the Al diffusion effect to form a thick AlGaN layer is really feasible to achieve the crack-free GaN films and obtain a high crystal quality simultaneously.

Effect of SiC buffer layer on GaN growth on Si via PA-MBE

NASA Astrophysics Data System (ADS)

Kukushkin, S. A.; Mizerov, A. M.; Osipov, A. V.; Redkov, A. V.; Telyatnik, R. S.; Timoshnev, S. N.

2017-11-01

The study is devoted to comparison of GaN thin films grown on SiC/Si substrates made by the method of atoms substitution with the films grown directly on Si substrates. The growth was performed in a single process via plasma assisted molecular beam epitaxy. The samples were studied via optical microscopy, Raman spectroscopy, ellipsometry, and a comparison of their characteristics was made. Using chemical etching in KOH, the polarity of GaN films grown on SiC/Si and Si substrates was determined.

Low-Angle-Incidence Microchannel Epitaxy of a-Plane GaN Grown by Ammonia-Based Metal-Organic Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Lin, Chia-Hung; Uchiyama, Shota; Maruyama, Takahiro; Naritsuka, Shigeya

2012-04-01

Low-angle-incidence microchannel epitaxy (LAIMCE) of a-plane GaN was performed using ammonia-based metal-organic molecular beam epitaxy to obtain wide and thin lateral overgrowth over a SiO2 mask. Trimethylgallium (TMG) was supplied perpendicular to the openings cut in the mask with a low incident angle of 5° relative to the substrate plane. The [NH3]/[TMG] ratio (R) dependence of GaN LAIMCE was optimized by varying R from 5 to 30. A wide lateral overgrowth of 3.7 µm with a dislocation density below the transmission electron microscope detection limit was obtained at R=15 for a thickness of 520 nm.

Aluminum gallium nitride-cladding-free nonpolar m-plane gallium nitride-based laser diodes

NASA Astrophysics Data System (ADS)

Schmidt, Mathew Corey

The recent demonstration of nonpolar GaN laser diode operation along with rapid device improvements signal a paradigm shift in GaN-based optoelectronic technology. Up until now, GaN optoelectronics have been trapped on the c-plane facet, where built-in polarization fields place limitations on device design and performance. The advent of bulk GaN substrates has allowed for the full exploration of not only the nonpolar m-plane facet, but all crystal orientations of GaN. This dissertation focuses on the development of some of the world's first nonpolar m-plane GaN laser diodes as well as on the AlGaN-cladding-free concept invented at UCSB. The absence of built-in electric fields allows for thicker quantum wells (≥8 nm) than those allowed on c-plane which improves the optical waveguiding characteristics and eliminates the need for AlGaN cladding layers. The benefits of this design include more uniform growth, more reproducible growth, no tensile cracking, lower operating voltages and currents, and higher yields. The first iteration of device design optimization is presented. Design and growth aspects investigated include quantum well number, quantum well thickness, Mg doping of the p-GaN cladding, aluminum composition of the AlGaN cladding layer and the implementation of an InGaN separate confined heterostructure. These optimizations led to threshold current densities as low as 2.4 kA/cm2.

Predicted lattice-misfit stresses in a gallium-nitride (GaN) film

NASA Astrophysics Data System (ADS)

Suhir, E.; Yi, S.

2017-02-01

Effective, easy-to-use and physically meaningful analytical predictive models are developed for the evaluation the lattice-misfit stresses (LMS) in a semiconductor film grown on a circular substrate (wafer). The two-dimensional (plane-stress) theory-of-elasticity approximation (TEA) is employed. First of all, the interfacial shearing stresses are evaluated. These stresses might lead to the occurrence and growth of dislocations, as well as to possible delaminations (adhesive strength of the assembly) and the elevated stress and strain in the buffering material, if any (cohesive strength of the assembly). Second of all, the normal radial and circumferential (tangential) stresses acting in the film cross-sections are determined. These stresses determine the short- and long-term strength (fracture toughness) of the film material. It is shown that while the normal stresses in the semiconductor film are independent of its thickness, the interfacial shearing stresses increase with an increase in the induced force (not stress!) acting in the film cross-sections, and that this force increases with an increase in the film thickness. This leads, for a thick enough film, to the occurrence, growth and propagation of dislocations. These start at the assembly ends and propagate, when the film thickness increases, inwards the structure. The TEA data are compared with the results obtained using a simplified strength-of-materials approach (SMA). This approach considers, instead of an actual circular assembly, an elongated bi-material rectangular strip of unit width and of finite length equal to the wafer diameter. The analysis, although applicable to any semiconductor crystal growth (SCG) technology is geared in this analysis to the Gallium-Nitride (GaN) technology. The numerical example is carried out for a GaN film grown on a Silicon Carbide (SiC) substrate. It is concluded that the SMA model is acceptable for understanding the physics of the state of stress and for the prediction of the normal stresses acting in the major mid-portion of the assembly. The SMA model underestimates, however, the maximum interfacial shearing stress at the assembly periphery, and, because of the very nature of the SMA, is unable to address the circumferential stress. This stress can be quite high at the circular boundary of the assembly. At the assembly edge the circumferential stress is as high as σθ = (2-ν1)σ1, i.e., by the factor of 2-ν1 higher than the normal stress, σ1, in the mid-portion of the film. In this formula, ν1 is Poisson's ratio of the film material.

Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: Experiment and theory

NASA Astrophysics Data System (ADS)

Tarnawska, L.; Dabrowski, J.; Grzela, T.; Lehmann, M.; Niermann, T.; Paszkiewicz, R.; Storck, P.; Schroeder, T.

2013-06-01

The final film quality of GaN on foreign substrates is known to crucially depend on the initial GaN interface and nucleation characteristics. To shed light on these characteristics of recently pioneered virtual, hexagonal GaN(0001) substrates on Si(111) via step graded Sc2O3(111)/Y2O3(111) buffers, a complex GaN(0001)/Sc2O3(111) interface structure model and the initial nucleation scenario is derived from a combined experimental (reflection high energy electron diffraction and X-ray photoelectron spectroscopy) and theoretical ab initio study. It is shown that the GaN/Sc2O3 interface chemistry is determined by a N-Ga-O-Sc atomic arrangement leading to N-polar GaN films. However, the atomic GaN(0001)/Sc2O3(111) interface configuration is complex and local perturbations might be at the origin of Ga-polar inversion domains in the mainly N-polar GaN films. The initial growth of GaN on Sc2O3 is characterized by an ultrathin N-Ga-O-Sc wetting layer which carries tensile strain and relaxes with increasing thickness. Further GaN deposition results in the formation of 3D islands which fully relax before island coalescence occurs. The implications of the GaN/Sc2O3 interface configuration, the 3D nucleation growth mode, and the coalescence process of misaligned islands are discussed with respect to the defect characteristics (inversion domains, cubic inclusions, threading dislocations) of the final GaN layer.

Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals.

PubMed

Qin, Hongbo; Luan, Xinghe; Feng, Chuang; Yang, Daoguo; Zhang, Guoqi

2017-12-12

For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson's ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and <111>, respectively, while they are in the orientations <111> and <100> for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson's ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson's ratios at planes (100) and (111) are isotropic, while the Poisson's ratio at plane (110) exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol -1 K -1 , respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger, resulting in a wider band gap. Densities of states in the orbital hybridization between Ga and N atoms of wurtzite GaN are much higher, indicating more electrons participate in forming Ga-N ionic bonds in the wurtzite GaN.

Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals

PubMed Central

Luan, Xinghe; Feng, Chuang; Yang, Daoguo; Zhang, Guoqi

2017-01-01

For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson’s ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and <111>, respectively, while they are in the orientations <111> and <100> for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson’s ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson’s ratios at planes (100) and (111) are isotropic, while the Poisson’s ratio at plane (110) exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol−1 K−1, respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger, resulting in a wider band gap. Densities of states in the orbital hybridization between Ga and N atoms of wurtzite GaN are much higher, indicating more electrons participate in forming Ga-N ionic bonds in the wurtzite GaN. PMID:29231902

Microstructural response of InGaN to swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Zhang, L. M.; Jiang, W.; Fadanelli, R. C.; Ai, W. S.; Peng, J. X.; Wang, T. S.; Zhang, C. H.

2016-12-01

A monocrystalline In0.18Ga0.82N film of ∼275 nm in thickness grown on a GaN/Al2O3 substrate was irradiated with 290 MeV 238U32+ ions to a fluence of 1.2 × 1012 cm-2 at room temperature. The irradiated sample was characterized using helium ion microscopy (HIM), Rutherford backscattering spectrometry under ion-channeling conditions (RBS/C), and high-resolution X-ray diffraction (HRXRD). The irradiation leads to formation of ion tracks throughout the thin In0.18Ga0.82N film and the 3.0 μm thick GaN buffer layer. The mean diameter of the tracks in In0.18Ga0.82N is ∼9 nm, as determined by HIM examination. Combination of the HIM and RBS/C data suggests that the In0.18Ga0.82N material in the track is likely to be highly disordered or fully amorphized. The irradiation induced lattice relaxation in In0.18Ga0.82N and a distribution of d-spacing of the (0 0 0 2) planes in GaN with lattice expansion are observed by HRXRD.

Polarization imaging of imperfect m-plane GaN surfaces

NASA Astrophysics Data System (ADS)

Sakai, Yuji; Kawayama, Iwao; Nakanishi, Hidetoshi; Tonouchi, Masayoshi

2017-04-01

Surface polar states in m-plane GaN wafers were studied using a laser terahertz (THz) emission microscope (LTEM). Femtosecond laser illumination excites THz waves from the surface due to photocarrier acceleration by local spontaneous polarization and/or the surface built-in electric field. The m-plane, in general, has a large number of unfavorable defects and unintentional polarization inversion created during the regrowth process. The LTEM images can visualize surface domains with different polarizations, some of which are hard to visualize with photoluminescence mapping, i.e., non-radiative defect areas. The present study demonstrates that the LTEM provides rich information about the surface polar states of GaN, which is crucial to improve the performance of GaN-based optoelectronic and power devices.

Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

NASA Astrophysics Data System (ADS)

Greenlee, Jordan D.; Feigelson, Boris N.; Anderson, Travis J.; Tadjer, Marko J.; Hite, Jennifer K.; Mastro, Michael A.; Eddy, Charles R.; Hobart, Karl D.; Kub, Francis J.

2014-08-01

The first step of a multi-cycle rapid thermal annealing process was systematically studied. The surface, structure, and optical properties of Mg implanted GaN thin films annealed at temperatures ranging from 900 to 1200 °C were investigated by Raman spectroscopy, photoluminescence, UV-visible spectroscopy, atomic force microscopy, and Nomarski microscopy. The GaN thin films are capped with two layers of in-situ metal organic chemical vapor deposition -grown AlN and annealed in 24 bar of N2 overpressure to avoid GaN decomposition. The crystal quality of the GaN improves with increasing annealing temperature as confirmed by UV-visible spectroscopy and the full widths at half maximums of the E2 and A1 (LO) Raman modes. The crystal quality of films annealed above 1100 °C exceeds the quality of the as-grown films. At 1200 °C, Mg is optically activated, which is determined by photoluminescence measurements. However, at 1200 °C, the GaN begins to decompose as evidenced by pit formation on the surface of the samples. Therefore, it was determined that the optimal temperature for the first step in a multi-cycle rapid thermal anneal process should be conducted at 1150 °C due to crystal quality and surface morphology considerations.

Molecular-beam heteroepitaxial growth and characterization of wide-band-gap semiconductor films and devices

NASA Astrophysics Data System (ADS)

Piquette, Eric Charles

The thesis consists of two parts. Part I describes work on the molecular beam epitaxial (MBE) growth of GaN, AlN, and AlxGa 1-xN alloys, as well as efforts in the initial technical development and demonstration of nitride-based high power electronic devices. The major issues pertaining to MBE growth are discussed, including special requirements of the growth system, substrates, film nucleation, n - and p-type doping, and the dependence of film quality on growth parameters. The GaN films were characterized by a variety of methods, including high resolution x-ray diffraction, photoluminescence, and Hall effect measurement. It is found that the film polarity and extended defect density as well as quality of photoluminescence and electrical transport properties depend crucially on how the nitride layer is nucleated on the substrate and how the subsequent film surface morphology evolves, which can be controlled by the growth conditions. A technique is proposed and demonstrated that utilizes the control of morphology evolution to reduce defect density and improve the structural quality of MBE GaN films. In addition to growth, the design and processing of high voltage GaN Schottky diodes is presented, as well as an experimental study of sputter-deposited ohmic and rectifying metal contacts to GaN. Simple models for high power devices, based on materials properties such as minority carrier diffusion length and critical electric breakdown field, are used to estimate the voltage standoff capability, current carrying capacity, and maximum operating frequency of unipolar and bipolar GaN power devices. The materials and transport properties of GaN pertinent to high power device design were measured experimentally. High voltage Schottky rectifiers were fabricated which verify the impressive electric breakdown field of GaN (2--5 MV/cm). Electron beam induced current (EBIC) experiments were also conducted to measure the minority carrier diffusion length for both electrons and holes in GaN. Part II of the thesis describes studies of the MBE growth of ZnS and investigations of ZnS/GaN fight emitting heterojunctions which show promise for application as blue and green light emitters. Zinc sulfide layers doped with Ag and Al were grown by MBE on sapphire, GaAs, and GaN substrates and characterized by x-ray diffraction and photoluminescence. Preliminary current-voltage and electroluminescence results are presented for a processed ZnS:Al,Ag/GaN:Mg prototype blue light emitting device.

N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

NASA Astrophysics Data System (ADS)

Ueno, Kohei; Kishikawa, Eiji; Ohta, Jitsuo; Fujioka, Hiroshi

2017-02-01

High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001) via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101 ¯ 2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6 μ m . Repeatable p-type doping in N-polar GaN films was achieved using Mg dopant, and their hole concentration and mobility can be controlled in the range of 8 × 1016-2 × 1018 cm-3 and 2-9 cm2V-1s-1, respectively. The activation energy of Mg in N-polar GaN based on a temperature-dependent Hall measurement was estimated to be 161 meV, which is comparable to that of the Ga-polar GaN. Based on these results, we demonstrated the fabrication of N-polar InGaN-based light emitting diodes with the long wavelength up to 609 nm.

Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001)

NASA Astrophysics Data System (ADS)

Kim, Jun-Young; Ionescu, Adrian; Mansell, Rhodri; Farrer, Ian; Oehler, Fabrice; Kinane, Christy J.; Cooper, Joshaniel F. K.; Steinke, Nina-Juliane; Langridge, Sean; Stankiewicz, Romuald; Humphreys, Colin J.; Cowburn, Russell P.; Holmes, Stuart N.; Barnes, Crispin H. W.

2017-01-01

Structural and magnetic properties of 1-10 nm thick Fe films deposited on GaN(0001) were investigated. In-situ reflecting high energy electron diffraction images indicated a α-Fe(110)/GaN(0001) growth of the 3D Volmer-Weber type. The α-Fe(110) X-ray diffraction peak showed a 1° full-width at half-maximum, indicating ≈20 nm grain sizes. A significant reduction in Fe atomic moment from its bulk value was observed for films thinner than 4 nm. Both GaN/Fe interface roughness and Fe film coercivity increased with Fe thickness, indicating a possible deterioration of Fe crystalline quality. Magnetic anisotropy was mainly uniaxial for all films while hexagonal anisotropies appeared for thicknesses higher than 3.7 nm.

Plasma-assisted molecular beam epitaxy of ZnO on in-situ grown GaN/4H-SiC buffer layers

NASA Astrophysics Data System (ADS)

Adolph, David; Tingberg, Tobias; Andersson, Thorvald; Ive, Tommy

2015-04-01

Plasma-assisted molecular beam epitaxy (MBE) was used to grow ZnO (0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 440°C-445°C and an O2 flow rate of 2.0-2.5 sccm, we obtained ZnO layers with smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm shown by AFM. The FWHM for X-ray rocking curves recorded across the ZnO(0002) and ZnO(10bar 15) reflections were 200 and 950 arcsec, respectively. These values showed that the mosaicity (tilt and twist) of the ZnO film was comparable to corresponding values of the underlying GaN buffer. It was found that a substrate temperature > 450°C and a high Zn-flux always resulted in a rough ZnO surface morphology. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82.3% and 73.0%, respectively and the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements showed that the layers were intrinsically n-type with an electron concentration of 1019 cm-3 and a Hall mobility of 50 cm2·V-1·s-1.

Preparation of p-type GaN-doped SnO2 thin films by e-beam evaporation and their applications in p-n junction

NASA Astrophysics Data System (ADS)

Lv, Shuliang; Zhou, Yawei; Xu, Wenwu; Mao, Wenfeng; Wang, Lingtao; Liu, Yong; He, Chunqing

2018-01-01

Various transparent GaN-doped SnO2 thin films were deposited on glass substrates by e-beam evaporation using GaN:SnO2 targets of different GaN weight ratios. It is interesting to find that carrier polarity of the thin films was converted from n-type to p-type with increasing GaN ratio higher than 15 wt.%. The n-p transition in GaN-doped SnO2 thin films was explained for the formation of GaSn and NO with increasing GaN doping level in the films, which was identified by Hall measurement and XPS analysis. A transparent thin film p-n junction was successfully fabricated by depositing p-type GaN:SnO2 thin film on SnO2 thin film, and a low leakage current (6.2 × 10-5 A at -4 V) and a low turn-on voltage of 1.69 V were obtained for the p-n junction.

Size effects in the thermal conductivity of gallium oxide (β-Ga{sub 2}O{sub 3}) films grown via open-atmosphere annealing of gallium nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Szwejkowski, Chester J.; Giri, Ashutosh; Donovan, Brian F.

2015-02-28

Gallium nitride (GaN) is a widely used semiconductor for high frequency and high power devices due to of its unique electrical properties: a wide band gap, high breakdown field, and high electron mobility. However, thermal management has become a limiting factor regarding efficiency, lifetime, and advancement of GaN devices and GaN-based applications. In this work, we study the thermal conductivity of beta-phase gallium oxide (β-Ga{sub 2}O{sub 3}) thin films, a component of typical gate oxides used in such devices. We use time domain thermoreflectance to measure the thermal conductivity of a variety of polycrystalline β-Ga{sub 2}O{sub 3} films of differentmore » thicknesses grown via open atmosphere annealing of the surfaces of GaN films on sapphire substrates. We show that the measured effective thermal conductivity of these β-Ga{sub 2}O{sub 3} films can span 1.5 orders of magnitude, increasing with an increased film thickness, which is indicative of the relatively large intrinsic thermal conductivity of the β-Ga{sub 2}O{sub 3} grown via this technique (8.8 ± 3.4 W m{sup −1} K{sup −1}) and large mean free paths compared to typical gate dielectrics commonly used in GaN device contacts. By conducting time domain thermoreflectance (TDTR) measurements with different metal transducers (Al, Au, and Au with a Ti wetting layer), we attribute this variation in effective thermal conductivity to a combination of size effects in the β-Ga{sub 2}O{sub 3} film resulting from phonon scattering at the β-Ga{sub 2}O{sub 3}/GaN interface and thermal transport across the β-Ga{sub 2}O{sub 3}/GaN interface. The measured thermal properties of open atmosphere-grown β-Ga{sub 2}O{sub 3} and its interface with GaN set the stage for thermal engineering of gate contacts in high frequency GaN-based devices.« less

Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Greenlee, Jordan D., E-mail: jordan.greenlee.ctr@nrl.navy.mil; Feigelson, Boris N.; Anderson, Travis J.

2014-08-14

The first step of a multi-cycle rapid thermal annealing process was systematically studied. The surface, structure, and optical properties of Mg implanted GaN thin films annealed at temperatures ranging from 900 to 1200 °C were investigated by Raman spectroscopy, photoluminescence, UV-visible spectroscopy, atomic force microscopy, and Nomarski microscopy. The GaN thin films are capped with two layers of in-situ metal organic chemical vapor deposition -grown AlN and annealed in 24 bar of N{sub 2} overpressure to avoid GaN decomposition. The crystal quality of the GaN improves with increasing annealing temperature as confirmed by UV-visible spectroscopy and the full widths at halfmore » maximums of the E{sub 2} and A{sub 1} (LO) Raman modes. The crystal quality of films annealed above 1100 °C exceeds the quality of the as-grown films. At 1200 °C, Mg is optically activated, which is determined by photoluminescence measurements. However, at 1200 °C, the GaN begins to decompose as evidenced by pit formation on the surface of the samples. Therefore, it was determined that the optimal temperature for the first step in a multi-cycle rapid thermal anneal process should be conducted at 1150 °C due to crystal quality and surface morphology considerations.« less

Growth and characterization of GaN thin film on Si substrate by thermionic vacuum arc (TVA)

NASA Astrophysics Data System (ADS)

Kundakçı, Mutlu; Mantarcı, Asim; Erdoğan, Erman

2017-01-01

Gallium nitride (GaN) is an attractive material with a wide-direct band gap (3.4 eV) and is one of the significant III-nitride materials, with many advantageous device applications such as high electron mobility transistors, lasers, sensors, LEDs, detectors, and solar cells, and has found applications in optoelectronic devices. GaN could also be useful for industrial research in the future. Chemical vapor deposition (CVD), molecular beam epitaxy (MBE), sputter, and pulsed laser deposition (PLD) are some of the methods used to fabricate GaN thin film. In this research, a GaN thin film grown on a silicon substrate using the thermionic vacuum arc (TVA) technique has been extensively studied. Fast deposition, short production time, homogeneity, and uniform nanostructure with low roughness can be seen as some of the merits of this method. The growth of the GaN was conducted at an operating pressure of 1× {{10}-6} \\text{Torr} , a plasma current 0.6 \\text{A} and for a very short period of time of 40 s. For the characterization process, scanning electron microscopy (SEM) was conducted to determine the structure and surface morphology of the material. Energy dispersive x-ray spectroscopy (EDX) was used to comprehend the elemental analysis characterization of the film. X-ray diffraction (XRD) was used to analyze the structure of the film. Raman measurements were taken to investigate the phonon modes of the material. The morphological properties of the material were analyzed in detail by atomic force microscopy (AFM).

Catalyst and processing effects on metal-assisted chemical etching for the production of highly porous GaN

NASA Astrophysics Data System (ADS)

Geng, Xuewen; Duan, Barrett K.; Grismer, Dane A.; Zhao, Liancheng; Bohn, Paul W.

2013-06-01

Metal-assisted chemical etching is a facile method to produce micro-/nanostructures in the near-surface region of gallium nitride (GaN) and other semiconductors. Detailed studies of the production of porous GaN (PGaN) using different metal catalysts and GaN doping conditions have been performed in order to understand the mechanism by which metal-assisted chemical etching is accomplished in GaN. Patterned catalysts show increasing metal-assisted chemical etching activity to n-GaN in the order Ag < Au < Ir < Pt. In addition, the catalytic behavior of continuous films is compared to discontinuous island films. Continuous metal films strongly shield the surface, hindering metal-assisted chemical etching, an effect which can be overcome by using discontinuous films or increasing the irradiance of the light source. With increasing etch time or irradiance, PGaN morphologies change from uniform porous structures to ridge and valley structures. The doping type plays an important role, with metal-assisted chemical etching activity increasing in the order p-GaN < intrinsic GaN < n-GaN. Both the catalyst identity and the doping type effects are explained by the work functions and the related band offsets that affect the metal-assisted chemical etching process through a combination of different barriers to hole injection and the formation of hole accumulation/depletion layers at the metal-semiconductor interface.

Electron affinity and surface states of GaN m -plane facets: Implication for electronic self-passivation

NASA Astrophysics Data System (ADS)

Portz, V.; Schnedler, M.; Eisele, H.; Dunin-Borkowski, R. E.; Ebert, Ph.

2018-03-01

The electron affinity and surface states are of utmost importance for designing the potential landscape within (heterojunction) nanowires and hence for tuning conductivity and carrier lifetimes. Therefore, we determined for stoichiometric nonpolar GaN (10 1 ¯0 ) m -plane facets, i.e., the dominating sidewalls of GaN nanowires, the electron affinity to 4.06 ±0.07 eV and the energy of the empty Ga-derived surface state in the band gap to 0.99 ±0.08 eV below the conduction band minimum using scanning tunneling spectroscopy. These values imply that the potential landscape within GaN nanowires is defined by a surface state-induced Fermi-level pinning, creating an upward band bending at the sidewall facets, which provides an electronic passivation.

Process-structure-property relationships of micron thick gadolinium oxide films deposited by reactive electron beam-physical vapor deposition (EB-PVD)

NASA Astrophysics Data System (ADS)

Grave, Daniel A.

Gadolinium oxide (Gd2O3) is an attractive material for solid state neutron detection due to gadolinium's high thermal neutron capture cross section. Development of neutron detectors based on Gd2 O3 requires sufficiently thick films to ensure neutron absorption. In this dissertation work, the process-structure-property relationships of micron thick Gd2O3 films deposited by reactive electron-beam physical vapor deposition (EB-PVD) were studied. Through a systematic design of experiments, fundamental studies were conducted to determine the effects of processing conditions such as deposition temperature, oxygen flow rate, deposition rate, and substrate material on Gd2O3 film crystallographic phase, texture, morphology, grain size, density, and surface roughness. Films deposited at high rates (> 5 A/s) were examined via x-ray diffraction (XRD) and Raman spectroscopy. Quantitative phase volume calculations were performed via a Rietveld refinement technique. All films deposited at high rates were found to be fully monoclinic or mixed cubic/monoclinic phase. Generally, increased deposition temperature and increased oxygen flow resulted in increased cubic phase volume. As film thickness increased, monoclinic phase volume increased. Grazing incidence x-ray diffraction (GIXRD) depth profiling analysis showed that cubic phase was only present under large incidence angle (large penetration depth) measurements, and after a certain point, only monoclinic phase was grown. This was confirmed by transmission electron microscopy (TEM) analysis with selected area diffraction (SAD). Based on this information, a large compressive stress was hypothesized to cause the formation of the monoclinic phase and this hypothesis was confirmed by demonstrating the existence of a stress induced phase transition. An experiment was designed to introduce compressive stress into the Gd2O 3 films via ion beam assisted deposition (IBAD). This allowed for systematic increase in compressive stress while keeping a large adatom diffusion length on the film surface. Crystallographic texture evolution in the Gd2O3 films was investigated for different substrate types. At high rates, it was shown that films deposited on different substrates (quartz, silicon, sapphire, and GaN) all had similar theta-2theta diffraction patterns, suggesting that films grew similarly on different substrates due to the low adatom mobility. However, significant differences in texture were observed for films deposited at low rates (< 1 A/s) and high temperature (650°C) on different substrates. For evaluation of in-plane texture in the Gd2O 3 films, pole figure analysis was performed. Mixed phase films deposited at high rates and low temperature showed weak out-of-plane texture and random in-plane texture. Mixed phase films deposited at high temperatures possessed a fiber texture (strong out-of-plane texture), but lacked the necessary adatom mobility to develop in-plane texture. For single phase cubic films grown under low rates of deposition, out-of-plane texture was observed on quartz substrates. However, weak and strong in-plane textures were observed for sapphire and GaN substrates, respectively. The use of ion bombardment resulted in the formation of moderate biaxial texture for films grown on quartz. For films grown on sapphire, a very strong biaxial texture was achieved with ion bombardment which adds additional energy to the system. The effects of processing on the structure, composition, and interfacial chemistry of the Gd2O3 films were investigated. The results showed that films primarily adhered to the Structure-Zone models with a few exceptions. The deviation from the Structure-Zone model was explained by the combined effects of columnar growth, shadowing, and adatom mobility. At low deposition temperatures, decreasing oxygen flow resulted in increased film density due to higher adatom mobility. Films deposited at this temperature were characterized by small (10-15 nm) nanocrystalline grains with some porous disordered regions. The dielectric properties of Si(111)/Gd2O3/Ti/Au MOS capacitors were investigated. Moisture absorption in Gd2O 3 films was found to result in both increased dielectric loss (10x) and inflated dielectric constant values ( 40 %). Heat treatment of the films at 100 °C resulted in outgassing of moisture, reduction in dielectric constant, and excellent frequency dispersion of the dielectric constant over a range of 10 kHz-1 MHz. The effect of film processing on the dielectric constant was systematically investigated. Tuning of the dielectric constant from a value of 11 to a value of 24 was possible by manipulating the structure and crystallographic phase of the material via the processing conditions. Capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of GaN/AlGaN/Gd2O3/Ti/Au MOS capacitors were investigated. The effects of processing on fixed oxide charge, trapped oxide charge, and density of interface states were evaluated. Single phase cubic films deposited at low rates with near heteroepitaxial growth were shown to have the lowest density of trapped charge. (Abstract shortened by ProQuest.).

Novel symmetry in the growth of gallium nitride on magnesium aluminate substrates

NASA Astrophysics Data System (ADS)

George, T.; Jacobsohn, E.; Pike, W. T.; Chang-Chien, P.; Khan, M. A.; Yang, J. W.; Mahajan, S.

1996-01-01

The growth of GaN by metalorganic chemical vapor deposition on (111) and (100) magnesium aluminate (MgAl2O4) substrates is examined using transmission electron microscopy. The results indicate that mainly wurtzite GaN is grown for both orientations. On the (111) substrate the following epitaxial relationship is observed: (0001)GaN ∥ (111)MgAl2O4, and [112¯0]GaN ∥ [11¯0]MgAl2O4. During the early stages of the (100) growth, four orientations of the wurtzite phase and a zinc-blende phase are formed. With increasing thickness, one of the wurtzite orientations dominates, with the epitaxial relationship being (11¯01)GaN ∥ (100)MgAl2O4 and the [112¯0]GaN nearly parallel to [011]MgAl2O4. This choice of growth orientation appears to be determined primarily by the nature of the interfacial bonding, with the basal plane of each of the four wurtzite GaN variants being nearly aligned along one of the four {111} planes intersecting the (100) surface of the MgAl2O4.

Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolat, Sami, E-mail: bolat@ee.bilkent.edu.tr; Tekcan, Burak; Ozgit-Akgun, Cagla

2015-01-15

Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N{sub 2}/H{sub 2} PA-ALD based GaN channels aremore » observed to have improved stability and transfer characteristics with respect to NH{sub 3} PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N{sub 2}:H{sub 2} ambient.« less

X-ray probe of GaN thin films grown on InGaN compliant substrates

NASA Astrophysics Data System (ADS)

Xu, Xiaoqing; Li, Yang; Liu, Jianming; Wei, Hongyuan; Liu, Xianglin; Yang, Shaoyan; Wang, Zhanguo; Wang, Huanhua

2013-04-01

GaN thin films grown on InGaN compliant substrates were characterized by several X-ray technologies: X-ray reciprocal space mapping (RSM), grazing incidence X-ray diffraction (GIXRD), and X-ray photoemission spectrum (XPS). Narrow Lorentz broadening and stress free state were observed for GaN grown on InGaN compliant substrate, while mosaic structure and large tensile stress were observed at the presence of residual indium atoms. RSM disclosed the mosaicity, and the GIXRD was conducted to investigate the depth dependences of crystal quality and strain states. XPS depth profile of indium contents indicated that residual indium atoms deteriorated the crystal quality of GaN not only by producing lattice mismatch at the interface of InGaN and GaN but also by diffusing into GaN overlayers. Accordingly, two solutions were proposed to improve the efficiency of self-patterned lateral epitaxial overgrowth method. This research goes a further step in resolving the urgent substrate problem in GaN fabrication.

Piezo-phototronic effect on electroluminescence properties of p-type GaN thin films.

PubMed

Hu, Youfan; Zhang, Yan; Lin, Long; Ding, Yong; Zhu, Guang; Wang, Zhong Lin

2012-07-11

We present that the electroluminescence (EL) properties of Mg-doped p-type GaN thin films can be tuned by the piezo-phototronic effect via adjusting the minority carrier injection efficiency at the metal-semiconductor (M-S) interface by strain induced polarization charges. The device is a metal-semiconductor-metal structure of indium tin oxide (ITO)-GaN-ITO. Under different straining conditions, the changing trend of the transport properties of GaN films can be divided into two types, corresponding to the different c-axis orientations of the films. An extreme value was observed for the integral EL intensity under certain applied strain due to the adjusted minority carrier injection efficiency by piezoelectric charges introduced at the M-S interface. The external quantum efficiency of the blue EL at 430 nm was changed by 5.84% under different straining conditions, which is 1 order of magnitude larger than the change of the green peak at 540 nm. The results indicate that the piezo-phototronic effect has a larger impact on the shallow acceptor states related EL process than on the one related to the deep acceptor states in p-type GaN films. This study has great significance on the practical applications of GaN in optoelectronic devices under a working environment where mechanical deformation is unavoidable such as for flexible/printable light emitting diodes.

Kinetic instability of AlGaN alloys during MBE growth under metal-rich conditions on m-plane GaN miscut towards the -c axis

NASA Astrophysics Data System (ADS)

Shirazi-HD, M.; Diaz, R. E.; Nguyen, T.; Jian, J.; Gardner, G. C.; Wang, H.; Manfra, M. J.; Malis, O.

2018-04-01

AlxGa1-xN layers with Al-composition above 0.6 (0.6 < x < 0.9) grown under metal-rich conditions by plasma-assisted molecular beam epitaxy on m-plane GaN miscut towards the -c axis are kinetically unstable. Even under excess Ga flux, the effective growth rate of AlGaN is drastically reduced, likely due to suppression of Ga-N dimer incorporation. The defect structure generated during these growth conditions is studied with energy dispersive x-ray spectroscopy scanning transmission electron microscopy as a function of Al flux. The AlGaN growth results in the formation of thin Al(Ga)N layers with Al-composition higher than expected and lower Al-composition AlGaN islands. The AlGaN islands have a flat top and are elongated along the c-axis (i.e., stripe-like shape). Possible mechanisms for the observed experimental results are discussed. Our data are consistent with a model in which Al-N dimers promote release of Ga-N dimers from the m-plane surface.

The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Fini, P.; Wu, X.; Tarsa, E.; Golan, Y.; Srikant, V.; Keller, S.; Denbaars, S.; Speck, J.

1998-08-01

The evolution of morphology and associated extended defects in GaN thin films grown on sapphire by metalorganic chemical vapor deposition (MOCVD) are shown to depend strongly on the growth environment. For the commonly used two-step growth process, a change in growth parameter such as reactor pressure influences the initial high temperature (HT) GaN growth mechanism. By means of transmission electron microscopy (TEM), atomic force microscopy (AFM), and high resolution X-ray diffraction (HRXRD) measurements, it is shown that the initial density of HT islands on the nucleation layer (NL) and subsequently the threading dislocation density in the HT GaN film may be directly controlled by tailoring the initial HT GaN growth conditions.

Thick nonpolar m-plane and semipolar (10 1 ̅ 1 ̅) GaN on an ammonothermal seed by tri-halide vapor-phase epitaxy using GaCl3

NASA Astrophysics Data System (ADS)

Iso, Kenji; Matsuda, Karen; Takekawa, Nao; Hikida, Kazuhiro; Hayashida, Naoto; Murakami, Hisashi; Koukitu, Akinori

2017-03-01

GaN layers of thickness 0.5-1.3 mm were grown at 1280 °C at a growth rate of 95-275 μm/h by tri-halide vapor-phase epitaxy on nonpolar m-plane (10 1 ̅ 0) and semipolar (10 1 ̅ 1 ̅) ammonothermal GaN substrates. For nonpolar m-plane (10 1 ̅ 0) with a -5° off-angle, the full widths at half maximum (FWHMs) of X-ray rocking curves (XRCs) and the basal plane stacking fault (BSF) density increased from 50 to 178″ and from 4.8×101 to 1.0×103 cm-1, respectively, upon increasing the growth rate from 115 to 245 μm/h. On the other hand, the XRC-FWHM and the BSF density for semipolar (10 1 ̅ 1 ̅) grown at 275 μm/h were as small as 28″ and 8.3×101 cm-1, respectively.

Morphological Control of GaN and Its Effect within Electrochemical Heterojunctions

DOE PAGES

Parameshwaran, Vijay; Clemens, Bruce

2016-08-17

With morphological control through a solid source chemical vapor deposition process, GaN polycrystalline films, single-crystal nanowires, and mixed film/wires are grown on silicon to form a heterojunction that is a basis for III-V nitride device development. By contacting the GaN/Si structure to the CoCp 2 0/ + redox pair and performing impedance spectroscopy measurements, the band diagram of this junction is built for these three configurations. This serves as a basis for understanding the electrical nature of III-V nitride/Si interfaces that exist in several photonic device technologies, especially in context of using GaN nanomaterials grown on silicon for various applications.more » When these junctions are exposed to low-power UV illumination in contact with the Fc/Fc + redox pair, photocurrents of 18, 110, and 482 nA/cm 2 are generated for the nanowires, mixed film/wires, and films respectively. These currents, along with the electrostatics investigated through the impedance spectroscopy, show the trends of photoconversion with GaN morphology in this junction. Furthermore, they suggest that the mixed film/wires are a promising design for solar-based applications such as photovoltaics and water splitting electrodes.« less

Morphological Control of GaN and Its Effect within Electrochemical Heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parameshwaran, Vijay; Clemens, Bruce

With morphological control through a solid source chemical vapor deposition process, GaN polycrystalline films, single-crystal nanowires, and mixed film/wires are grown on silicon to form a heterojunction that is a basis for III-V nitride device development. By contacting the GaN/Si structure to the CoCp 2 0/ + redox pair and performing impedance spectroscopy measurements, the band diagram of this junction is built for these three configurations. This serves as a basis for understanding the electrical nature of III-V nitride/Si interfaces that exist in several photonic device technologies, especially in context of using GaN nanomaterials grown on silicon for various applications.more » When these junctions are exposed to low-power UV illumination in contact with the Fc/Fc + redox pair, photocurrents of 18, 110, and 482 nA/cm 2 are generated for the nanowires, mixed film/wires, and films respectively. These currents, along with the electrostatics investigated through the impedance spectroscopy, show the trends of photoconversion with GaN morphology in this junction. Furthermore, they suggest that the mixed film/wires are a promising design for solar-based applications such as photovoltaics and water splitting electrodes.« less

Structural and optical properties of II-VI and III-V compound semiconductors

NASA Astrophysics Data System (ADS)

Huang, Jingyi

This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some fundamental issues regarding compositional fluctuations and microstructure in GaInNAs and InAlN alloys. In the first part, the microstructure of (001) InP scratched in an atomic force microscope with a small diamond tip has been studied as a function of applied normal force and crystalline direction in order to understand at the nanometer scale the deformation mechanisms in the zinc-blende structure. TEM images show deeper dislocation propagation for scratches along <110> compared to <100>. High strain fields were observed in <100> scratches, indicating hardening due to locking of dislocations gliding on different slip planes. Reverse plastic flow have been observed in <110> scratches in the form of pop-up events that result from recovery of stored elastic strain. In a separate study, nanoindentation-induced plastic deformation has been studied in c-, a-, and m-plane ZnO single crystals and c-plane GaN respectively, to study the deformation mechanism in wurtzite hexagonal structures. TEM results reveal that the prime deformation mechanism is slip on basal planes and in some cases, on pyramidal planes, and strain built up along particular directions. No evidence of phase transformation or cracking was observed in both materials. CL imaging reveals quenching of near band-edge emission by dislocations. In the second part, compositional inhomogeneity in quaternary GaInNAs and ternary InAlN alloys has been studied using TEM. It is shown that exposure to antimony during growth of GaInNAs results in uniform chemical composition in the epilayer, as antimony suppresses the surface mobility of adatoms that otherwise leads to two-dimensional growth and elemental segregation. In a separate study, compositional instability is observed in lattice-matched InAlN films grown on GaN, for growth beyond a certain thickness. Beyond 200 nm of thickness, two sub-layers with different indium content are observed, the top one with lower indium content.

High-Temperature Growth of GaN and Al x Ga1- x N via Ammonia-Based Metalorganic Molecular-Beam Epitaxy

NASA Astrophysics Data System (ADS)

Billingsley, Daniel; Henderson, Walter; Doolittle, W. Alan

2010-05-01

The effect of high-temperature growth on the crystalline quality and surface morphology of GaN and Al x Ga1- x N grown by ammonia-based metalorganic molecular-beam epitaxy (NH3-MOMBE) has been investigated as a means of producing atomically smooth films suitable for device structures. The effects of V/III ratio on the growth rate and surface morphology are described herein. The crystalline quality of both GaN and AlGaN was found to mimic that of the GaN templates, with (002) x-ray diffraction (XRD) full-widths at half- maximum (FWHMs) of ~350 arcsec. Nitrogen-rich growth conditions have been found to provide optimal surface morphologies with a root-mean-square (RMS) roughness of ~0.8 nm, yet excessive N-rich environments have been found to reduce the growth rate and result in the formation of faceted surface pitting. AlGaN exhibits a decreased growth rate, as compared with GaN, due to increased N recombination as a result of the increased pyrolysis of NH3 in the presence of Al. AlGaN films grown directly on GaN templates exhibited Pendellösung x-ray fringes, indicating an abrupt interface and a planar AlGaN film. AlGaN films grown for this study resulted in an optimal RMS roughness of ~0.85 nm with visible atomic steps.

High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.

PubMed

Chen, Zhaolong; Zhang, Xiang; Dou, Zhipeng; Wei, Tongbo; Liu, Zhiqiang; Qi, Yue; Ci, Haina; Wang, Yunyu; Li, Yang; Chang, Hongliang; Yan, Jianchang; Yang, Shenyuan; Zhang, Yanfeng; Wang, Junxi; Gao, Peng; Li, Jinmin; Liu, Zhongfan

2018-06-08

Single-crystalline GaN-based light-emitting diodes (LEDs) with high efficiency and long lifetime are the most promising solid-state lighting source compared with conventional incandescent and fluorescent lamps. However, the lattice and thermal mismatch between GaN and sapphire substrate always induces high stress and high density of dislocations and thus degrades the performance of LEDs. Here, the growth of high-quality GaN with low stress and a low density of dislocations on graphene (Gr) buffered sapphire substrate is reported for high-brightness blue LEDs. Gr films are directly grown on sapphire substrate to avoid the tedious transfer process and GaN is grown by metal-organic chemical vapor deposition (MOCVD). The introduced Gr buffer layer greatly releases biaxial stress and reduces the density of dislocations in GaN film and In x Ga 1- x N/GaN multiple quantum well structures. The as-fabricated LED devices therefore deliver much higher light output power compared to that on a bare sapphire substrate, which even outperforms the mature process derived counterpart. The GaN growth on Gr buffered sapphire only requires one-step growth, which largely shortens the MOCVD growth time. This facile strategy may pave a new way for applications of Gr films and bring several disruptive technologies for epitaxial growth of GaN film and its applications in high-brightness LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atomically Flat Surfaces Developed for Improved Semiconductor Devices

NASA Technical Reports Server (NTRS)

Powell, J. Anthony

2001-01-01

New wide bandgap semiconductor materials are being developed to meet the diverse high temperature, -power, and -frequency demands of the aerospace industry. Two of the most promising emerging materials are silicon carbide (SiC) for high-temperature and high power applications and gallium nitride (GaN) for high-frequency and optical (blue-light-emitting diodes and lasers) applications. This past year Glenn scientists implemented a NASA-patented crystal growth process for producing arrays of device-size mesas whose tops are atomically flat (i.e., step-free). It is expected that these mesas can be used for fabricating SiC and GaN devices with major improvements in performance and lifetime. The promising new SiC and GaN devices are fabricated in thin-crystal films (known as epi films) that are grown on commercial single-crystal SiC wafers. At this time, no commercial GaN wafers exist. Crystal defects, known as screw defects and micropipes, that are present in the commercial SiC wafers propagate into the epi films and degrade the performance and lifetime of subsequently fabricated devices. The new technology isolates the screw defects in a small percentage of small device-size mesas on the surface of commercial SiC wafers. This enables atomically flat surfaces to be grown on the remaining defect-free mesas. We believe that the atomically flat mesas can also be used to grow GaN epi films with a much lower defect density than in the GaN epi films currently being grown. Much improved devices are expected from these improved low-defect epi films. Surface-sensitive SiC devices such as Schottky diodes and field effect transistors should benefit from atomically flat substrates. Also, we believe that the atomically flat SiC surface will be an ideal surface on which to fabricate nanoscale sensors and devices. The process for achieving atomically flat surfaces is illustrated. The surface steps present on the "as-received" commercial SiC wafer is also illustrated. because of the small tilt angle between the crystal "basal" plane and the polished wafer surface. These steps are used in normal SiC epi film growth in a process known as stepflow growth to produce material for device fabrication. In the new process, the first step is to etch an array of mesas on the SiC wafer top surface. Then, epi film growth is carried out in the step flow fashion until all steps have grown themselves out of existence on each defect-free mesa. If the size of the mesas is sufficiently small (about 0.1 by 0.1 mm), then only a small percentage of the mesas will contain an undesired screw defect. Mesas with screw defects supply steps during the growth process, allowing a rough surface with unwanted hillocks to form on the mesa. The improvement in SiC epi surface morphology achievable with the new technology is shown. An atomic force microscope image of a typical SiC commercial epilayer surface is also shown. A similar image of an SiC atomically flat epi surface grown in a Glenn laboratory is given. With the current screw defect density of commercial wafers (about 5000 defects/cm2), the yield of atomically free 0.1 by 0.l mm mesas is expected to be about 90 percent. This is large enough for many types of electronic and optical devices. The implementation of this new technology was recently published in Applied Physics Letters. This work was initially carried out in-house under a Director's Discretionary Fund project and is currently being further developed under the Information Technology Base Program.

Low-cost growth of magnesium doped gallium nitride thin films by sol-gel spin coating method

NASA Astrophysics Data System (ADS)

Amin, N. Mohd; Ng, S. S.

2018-01-01

Low-cost sol-gel spin coating growth of magnesium (Mg) doped gallium nitride (GaN) thin films with different concentrations of Mg was reported. The effects of the Mg concentration on the structural, surface morphology, elemental compositions, lattice vibrational, and electrical properties of the deposited films were investigated. X-ray diffraction results show that the Mg-doped samples have wurtzite structure with preferred orientation of GaN(002). The crystallite size decreases and the surface of the films with pits/pores were formed, while the crystalline quality of the films degraded as the Mg concentration increases from 2% to 6. %. All the Raman active phonon modes of the wurtzite GaN were observed while a broad peak attributed to the Mg-related lattice vibrational mode was detected at 669 cm-1. Hall effect results show that the resistivity of the thin films decreases while the hole concentration and hall mobility of thin films increases as the concentration of the Mg increases.

Piezoelectric effect on the thermal conductivity of monolayer gallium nitride

NASA Astrophysics Data System (ADS)

Zhang, Jin

2018-01-01

Using molecular dynamics and density functional theory simulations, in this work, we find that the heat transport property of the monolayer gallium nitride (GaN) can be efficiently tailored by external electric field due to its unique piezoelectric characteristic. As the monolayer GaN possesses different piezoelectric properties in armchair and zigzag directions, different effects of the external electric field on thermal conductivity are observed when it is applied in the armchair and zigzag directions. Our further study reveals that due to the elastoelectric effect in the monolayer GaN, the external electric field changes the Young's modulus and therefore changes the phonon group velocity. Also, due to the inverse piezoelectric effect, the applied electric field induces in-plane stress in the monolayer GaN subject to a length constraint, which results in the change in the lattice anharmonicity and therefore affects the phonon mean free path. Furthermore, for relatively long GaN monolayers, the in-plane stress may trigger the buckling instability, which can significantly reduce the phonon mean free path.

Defect reduction of SiNx embedded m-plane GaN grown by hydride vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Woo, Seohwi; Kim, Minho; So, Byeongchan; Yoo, Geunho; Jang, Jongjin; Lee, Kyuseung; Nam, Okhyun

2014-12-01

Nonpolar (1 0 -1 0) m-plane GaN has been grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE). We studied the defect reduction of m-GaN with embedded SiNx interlayers deposited by ex-situ metal organic chemical vapor deposition (MOCVD). The full-width at half-maximum values of the X-ray rocking curves for m-GaN with embedded SiNx along [1 1 -2 0]GaN and [0 0 0 1]GaN were reduced to 528 and 1427 arcs, respectively, as compared with the respective values of 947 and 3170 arcs, of m-GaN without SiNx. Cross-section transmission electron microscopy revealed that the basal stacking fault density was decreased by approximately one order to 5×104 cm-1 due to the defect blocking of the embedded SiNx. As a result, the near band edge emission intensities of the room-temperature and low-temperature photoluminescence showed approximately two-fold and four-fold improvement, respectively.

Design and simulation of GaN based Schottky betavoltaic nuclear micro-battery.

PubMed

San, Haisheng; Yao, Shulin; Wang, Xiang; Cheng, Zaijun; Chen, Xuyuan

2013-10-01

The current paper presents a theoretical analysis of Ni-63 nuclear micro-battery based on a wide-band gap semiconductor GaN thin-film covered with thin Ni/Au films to form Schottky barrier for carrier separation. The total energy deposition in GaN was calculated using Monte Carlo methods by taking into account the full beta spectral energy, which provided an optimal design on Schottky barrier width. The calculated results show that an 8 μm thick Schottky barrier can collect about 95% of the incident beta particle energy. Considering the actual limitations of current GaN growth technique, a Fe-doped compensation technique by MOCVD method can be used to realize the n-type GaN with a carrier concentration of 1×10(15) cm(-3), by which a GaN based Schottky betavoltaic micro-battery can achieve an energy conversion efficiency of 2.25% based on the theoretical calculations of semiconductor device physics. Copyright © 2013 Elsevier Ltd. All rights reserved.

Optimization of ion-atomic beam source for deposition of GaN ultrathin films.

PubMed

Mach, Jindřich; Šamořil, Tomáš; Kolíbal, Miroslav; Zlámal, Jakub; Voborny, Stanislav; Bartošík, Miroslav; Šikola, Tomáš

2014-08-01

We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electron-impact ion beam source to produce ultra-low energy (20-200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of ≈15 mm by one order of magnitude (j ≈ 1000 nA/cm(2)). Hence, a successful growth of GaN ultrathin films on Si(111) 7 × 7 substrate surfaces at reasonable times and temperatures significantly lower (RT, 300 °C) than in conventional metalorganic chemical vapor deposition technologies (≈1000 °C) was achieved. The chemical composition of these films was characterized in situ by X-ray Photoelectron Spectroscopy and morphology ex situ using Scanning Electron Microscopy. It has been shown that the morphology of GaN layers strongly depends on the relative Ga-N bond concentration in the layers.

Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport.

PubMed

Santana, Guillermo; de Melo, Osvaldo; Aguilar-Hernández, Jorge; Mendoza-Pérez, Rogelio; Monroy, B Marel; Escamilla-Esquivel, Adolfo; López-López, Máximo; de Moure, Francisco; Hernández, Luis A; Contreras-Puente, Gerardo

2013-03-15

Photoluminescence (PL) studies in GaN thin films grown by infrared close space vapor transport (CSVT-IR) in vacuum are presented in this work. The growth of GaN thin films was done on a variety of substrates like silicon, sapphire and fused silica. Room temperature PL spectra of all the GaN films show near band-edge emission (NBE) and a broad blue and green luminescence (BL, GL), which can be seen with the naked eye in a bright room. The sample grown by infrared CSVT on the silicon substrate shows several emission peaks from 2.4 to 3.22 eV with a pronounced red shift with respect to the band gap energy. The sample grown on sapphire shows strong and broad ultraviolet emission peaks (UVL) centered at 3.19 eV and it exhibits a red shift of NBE. The PL spectrum of GaN films deposited on fused silica exhibited a unique and strong blue-green emission peak centered at 2.38 eV. The presence of yellow and green luminescence in all samples is related to native defects in the structure such as dislocations in GaN and/or the presence of amorphous phases. We analyze the material quality that can be obtained by CSVT-IR in vacuum, which is a high yield technique with simple equipment set-up, in terms of the PL results obtained in each case.

Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport

PubMed Central

Santana, Guillermo; de Melo, Osvaldo; Aguilar-Hernández, Jorge; Mendoza-Pérez, Rogelio; Monroy, B. Marel; Escamilla-Esquivel, Adolfo; López-López, Máximo; de Moure, Francisco; Hernández, Luis A.; Contreras-Puente, Gerardo

2013-01-01

Photoluminescence (PL) studies in GaN thin films grown by infrared close space vapor transport (CSVT-IR) in vacuum are presented in this work. The growth of GaN thin films was done on a variety of substrates like silicon, sapphire and fused silica. Room temperature PL spectra of all the GaN films show near band-edge emission (NBE) and a broad blue and green luminescence (BL, GL), which can be seen with the naked eye in a bright room. The sample grown by infrared CSVT on the silicon substrate shows several emission peaks from 2.4 to 3.22 eV with a pronounced red shift with respect to the band gap energy. The sample grown on sapphire shows strong and broad ultraviolet emission peaks (UVL) centered at 3.19 eV and it exhibits a red shift of NBE. The PL spectrum of GaN films deposited on fused silica exhibited a unique and strong blue-green emission peak centered at 2.38 eV. The presence of yellow and green luminescence in all samples is related to native defects in the structure such as dislocations in GaN and/or the presence of amorphous phases. We analyze the material quality that can be obtained by CSVT-IR in vacuum, which is a high yield technique with simple equipment set-up, in terms of the PL results obtained in each case. PMID:28809356

Electrochemical fabrication and optoelectronic properties of hybrid heterostructure of CuPc/porous GaN

NASA Astrophysics Data System (ADS)

Peng, Fei; Qin, Shuang-Jiao; Hu, Li-Feng; Wang, Juan-Ye; Yang, Jia-Mei; Chen, Xue-Qing; Pan, Ge-Bo

2016-05-01

A new hybrid heterostructure of p-type copper phthalocyanine (CuPc) and n-type porous GaN (PGaN) has been fabricated by electrophoretic deposition. The influence of CuPc concentration, electric field intensity, and deposition time on the growth of CuPc film has been explored. The as-prepared CuPc films are made of numerous nanorods. The X-ray diffraction (XRD) spectra revealed that the CuPc films are the β phase and amorphous type on pristine and porous GaN, respectively. Moreover, the prototype devices were fabricated on the basis of the CuPc/PGaN heterostructures. The devices exhibited excellent photodetector performance under ultraviolet (UV) light illumination.

Preparation and evaluation of Mn3GaN1-x thin films with controlled N compositions

NASA Astrophysics Data System (ADS)

Ishino, Sunao; So, Jongmin; Goto, Hirotaka; Hajiri, Tetsuya; Asano, Hidefumi

2018-05-01

Thin films of antiperovskite Mn3GaN1-x were grown on MgO (001) substrates by reactive magnetron sputtering, and their structural, magnetic, and magneto-optical properties were systematically investigated. It was found that the combination of the deposition rate and the N2 gas partial pressure could produce epitaxial films with a wide range of N composition (N-deficiency) and resulting c/a values (0.93 - 1.0). While the films with c/a = 0.992 - 1.0 were antiferromagnetic, the films with c/a = 0.93 - 0.989 showed perpendicular magnetic anisotropy (PMA) with the maximum PMA energy up to 1.5×106 erg/cm3. Systematic dependences of the energy spectra of the polar Kerr signals on the c/a ratio were observed, and the Kerr ellipticity was as large as 2.4 deg. at 1.9 eV for perpendicularly magnetized ferromagnetic thin films with c/a = 0.975. These results highlight that the tetragonal distortion plays an important role in magnetic and magneto-optical properties of Mn3GaN1-x thin films.

Nanostructural engineering of nitride nucleation layers for GaN substrate dislocation reduction.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koleske, Daniel David; Lee, Stephen Roger; Lemp, Thomas Kerr

2009-07-01

With no lattice matched substrate available, sapphire continues as the substrate of choice for GaN growth, because of its reasonable cost and the extensive prior experience using it as a substrate for GaN. Surprisingly, the high dislocation density does not appear to limit UV and blue LED light intensity. However, dislocations may limit green LED light intensity and LED lifetime, especially as LEDs are pushed to higher current density for high end solid state lighting sources. To improve the performance for these higher current density LEDs, simple growth-enabled reductions in dislocation density would be highly prized. GaN nucleation layers (NLs)more » are not commonly thought of as an application of nano-structural engineering; yet, these layers evolve during the growth process to produce self-assembled, nanometer-scale structures. Continued growth on these nuclei ultimately leads to a fully coalesced film, and we show in this research program that their initial density is correlated to the GaN dislocation density. In this 18 month program, we developed MOCVD growth methods to reduce GaN dislocation densities on sapphire from 5 x 10{sup 8} cm{sup -2} using our standard delay recovery growth technique to 1 x 10{sup 8} cm{sup -2} using an ultra-low nucleation density technique. For this research, we firmly established a correlation between the GaN nucleation thickness, the resulting nucleation density after annealing, and dislocation density of full GaN films grown on these nucleation layers. We developed methods to reduce the nuclei density while still maintaining the ability to fully coalesce the GaN films. Ways were sought to improve the GaN nuclei orientation by improving the sapphire surface smoothness by annealing prior to the NL growth. Methods to eliminate the formation of additional nuclei once the majority of GaN nuclei were developed using a silicon nitride treatment prior to the deposition of the nucleation layer. Nucleation layer thickness was determined using optical reflectance and the nucleation density was determined using atomic force microscopy (AFM) and Nomarski microscopy. Dislocation density was measured using X-ray diffraction and AFM after coating the surface with silicon nitride to delineate all dislocation types. The program milestone of producing GaN films with dislocation densities of 1 x 10{sup 8} cm{sup -2} was met by silicon nitride treatment of annealed sapphire followed by the multiple deposition of a low density of GaN nuclei followed by high temperature GaN growth. Details of this growth process and the underlying science are presented in this final report along with problems encountered in this research and recommendations for future work.« less

GaN grown on nano-patterned sapphire substrates

NASA Astrophysics Data System (ADS)

Jing, Kong; Meixin, Feng; Jin, Cai; Hui, Wang; Huaibing, Wang; Hui, Yang

2015-04-01

High-quality gallium nitride (GaN) film was grown on nano-patterned sapphire substrates (NPSS) and investigated using XRD and SEM. It was found that the optimum thickness of the GaN buffer layer on the NPSS is 15 nm, which is thinner than that on micro-patterned sapphire substrates (MPSS). An interesting phenomenon was observed for GaN film grown on NPSS:GaN mainly grows on the trench regions and little grows on the sidewalls of the patterns at the initial growth stage, which is dramatically different from GaN grown on MPSS. In addition, the electrical and optical properties of LEDs grown on NPSS were characterized. Project supported by the Suzhou Nanojoin Photonics Co., Ltd and the High-Tech Achievements Transformation of Jiangsu Province, China (No.BA2012010).

GaN growth via HVPE on SiC/Si substrates: growth mechanisms

NASA Astrophysics Data System (ADS)

Sharofidinov, Sh Sh; Redkov, A. V.; Osipov, A. V.; Kukushkin, S. A.

2017-11-01

The article focuses on the study of GaN thin film growth via chloride epitaxy on SiC/Si hybrid substrate. SiC buffer layer was grown by a method of substitution of atoms, which allows one to reduce impact of mechanical stress therein on subsequent growth of III-nitride films. It is shown, that change in GaN growth conditions leads to change in its growth mechanism. Three mechanisms: epitaxial, spiral and stepwise growth are considered and mechanical stresses are estimated via Raman spectroscopy.

Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Jing; Zhao, Degang, E-mail: dgzhao@red.semi.ac.cn; Jiang, Desheng

2015-03-15

The effects of hydrogen impurities on p-type resistivity in Mg-doped GaN films were investigated. It was found that hydrogen impurities may have the dual role of passivating Mg{sub Ga} acceptors and passivating donor defects. A decrease in p-type resistivity when O{sub 2} is introduced during the postannealing process is attributed to the fact that annealing in an O{sub 2}-containing environment can enhance the dissociation of Mg{sub Ga}-H complexes as well as the outdiffusion of H atoms from p-GaN films. However, low H concentrations are not necessarily beneficial in Mg-doped GaN films, as H atoms may also be bound at donormore » species and passivate them, leading to the positive effect of reduced compensation.« less

Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN

NASA Astrophysics Data System (ADS)

Chan, Silvia H.; Bisi, Davide; Liu, Xiang; Yeluri, Ramya; Tahhan, Maher; Keller, Stacia; DenBaars, Steven P.; Meneghini, Matteo; Mishra, Umesh K.

2017-11-01

This paper investigates the effects of the oxygen precursor flow supplied during metalorganic chemical vapor deposition (MOCVD) of Al2O3 films on the forward bias behavior of Al2O3/GaN metal-oxide-semiconductor capacitors. The low oxygen flow (100 sccm) delivered during the in situ growth of Al2O3 on GaN resulted in films that exhibited a stable capacitance under forward stress, a lower density of stress-generated negative fixed charges, and a higher dielectric breakdown strength compared to Al2O3 films grown under high oxygen flow (480 sccm). The low oxygen grown Al2O3 dielectrics exhibited lower gate current transients in stress/recovery measurements, providing evidence of a reduced density of trap states near the GaN conduction band and an enhanced robustness under accumulated gate stress. This work reveals oxygen flow variance in MOCVD to be a strategy for controlling the dielectric properties and performance.

Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface

NASA Astrophysics Data System (ADS)

Hauenstein, R. J.; Collins, D. A.; Cai, X. P.; O'Steen, M. L.; McGill, T. C.

1995-05-01

Effect of a nitrogen electron-cyclotron-resonance (ECR) microwave plasma on near-surface composition, crystal structure, and morphology of the As-stabilized GaAs (100) surface is investigated with the use of digitally image-processed in situ reflection high energy electron diffraction. Nitridation is performed on molecular beam epitaxially (MBE) grown GaAs surfaces near 600 °C under typical conditions for ECR microwave plasma-assisted MBE growth of GaN films on GaAs. Brief plasma exposures (≊3-5 s) are shown to result in a specular, coherently strained, relatively stable, GaN film approximately one monolayer in thickness, which can be commensurately overgrown with GaAs while longer exposures (up to 1 min) result in incommensurate zincblende epitaxial GaN island structures. Specular and nonspecular film formations are explained in terms of N-for-As surface and subsurface anion exchange reactions, respectively. Commensurate growth of ultrathin buried GaN layers in GaAs is achieved.

Indium gallium nitride/gallium nitride quantum wells grown on polar and nonpolar gallium nitride substrates

NASA Astrophysics Data System (ADS)

Lai, Kun-Yu

Nonpolar (m-plane or a-plane) gallium nitride (GaN) is predicted to be a potential substrate material to improve luminous efficiencies of nitride-based quantum wells (QWs). Numerical calculations indicated that the spontaneous emission rate in a single In0.15Ga0.85N/GaN QW could be improved by ˜2.2 times if the polarization-induced internal field was avoided by epitaxial deposition on nonpolar substrates. A challenge for nonpolar GaN is the limited size (less than 10x10 mm2) of substrates, which was addressed by expansion during the regrowth by Hydride Vapor Phase Epitaxy (HVPE). Subsurface damage in GaN substrates were reduced by annealing with NH3 and N2 at 950°C for 60 minutes. It was additionally found that the variation of m-plane QWs' emission properties was significantly increased when the substrate miscut toward a-axis was increased from 0° to 0.1°. InGaN/GaN QWs were grown by Metalorganic Chemical Vapor Deposition (MOCVD) on c-plane and m-plane GaN substrates. The QWs were studied by cathodoluminescence spectroscopy with different incident electron beam probe currents (0.1 nA ˜ 1000 nA). Lower emission intensities and longer peak wavelengths from c-plane QWs were attributed to the Quantum-confined Stark Effect (QCSE). The emission intensity ratios of m-plane QWs to c-plane QWs decreased from 3.04 at 1 nA to 1.53 at 1000 nA. This was identified as the stronger screening effects of QCSE at higher current densities in c-plane QWs. To further investigate these effects in a fabricated structure, biased photoluminescence measurements were performed on m-plane InGaN/GaN QWs. The purpose was to detect the possible internal fields induced by the dot-like structure in the InGaN layer through the response of these internal fields under externally applied fields. No energy shifts of the QWs were observed, which was attributed to strong surface leakage currents.

Enhanced piezoelectric output of NiO/nanoporous GaN by suppression of internal carrier screening

NASA Astrophysics Data System (ADS)

Waseem, Aadil; Jeong, Dae Kyung; Johar, Muhammad Ali; Kang, Jin-Ho; Ha, Jun-Seok; Key Lee, June; Ryu, Sang-Wan

2018-06-01

The efficiency of piezoelectric nanogenerators (PNGs) significantly depends on the free carrier concentration of semiconductors. In the presence of a mechanical stress, piezoelectric charges are generated at both ends of the PNG, which are rapidly screened by the free carriers. The screening effect rapidly decreases the piezoelectric output within fractions of a second. In this study, the piezoelectric outputs of bulk- and nanoporous GaN-based heterojunction PNGs are compared. GaN thin films were epitaxially grown on sapphire substrates using metal organic chemical vapor deposition. Nanoporous GaN was fabricated using electrochemical etching, depleted of free carriers owing to the surface Fermi-level pinning. A highly resistive NiO thin film was deposited on bulk- and nanoporous GaN using radio frequency magnetron sputter. The NiO/nanoporous GaN PNG (NPNG) under a periodic compressive stress of 4 MPa exhibited an output voltage and current of 0.32 V and 1.48 μA cm‑2, respectively. The output voltage and current of the NiO/thin film-GaN PNG (TPNG) were three and five times smaller than those of the NPNG, respectively. Therefore, the high-resistivity of NiO and nanoporous GaN depleted by the Fermi-level pinning are advantageous and provide a better piezoelectric performance of the NPNG, compared with that of the TPNG.

Characterization of an Mg-implanted GaN p-i-n Diode

DTIC Science & Technology

2016-03-31

unintentionally doped GaN layer was grown by metal organic chemical vapor deposition (MOCVD) on a n+ Ga -face c-oriented GaN substrate. The as-grown MOCVD film...their proper lattice sites. In the case of Mg implanted GaN , the Mg must replace Ga to result in p-type material. In many other semiconductor...Characterization of an Mg-implanted GaN p-i-n Diode Travis J. Anderson, Jordan D. Greenlee, Boris N. Feigelson, Karl D. Hobart, and Francis J

Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces

NASA Astrophysics Data System (ADS)

Segev, D.; Van de Walle, C. G.

2006-10-01

Using band structure and total energy methods, we study the atomic and electronic structures of the polar (+c and - c plane) and nonpolar (a and m plane) surfaces of GaN and InN. We identify two distinct microscopic origins for Fermi-level pinning on GaN and InN, depending on surface stoichiometry and surface polarity. At moderate Ga/N ratios unoccupied gallium dangling bonds pin the Fermi level on n-type GaN at 0.5 0.7 eV below the conduction-band minimum. Under highly Ga-rich conditions metallic Ga adlayers lead to Fermi-level pinning at 1.8 eV above the valence-band maximum. We also explain the source of the intrinsic electron accumulation that has been universally observed on polar InN surfaces. It is caused by In-In bonds leading to occupied surface states above the conduction-band minimum. We predict that such a charge accumulation will be absent on the nonpolar surfaces of InN, when prepared under specific conditions.

Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alevli, Mustafa, E-mail: mustafaalevli@marmara.edu.tr; Gungor, Neşe; Haider, Ali

2016-01-15

Gallium nitride films were grown by hollow cathode plasma-assisted atomic layer deposition using triethylgallium and N{sub 2}/H{sub 2} plasma. An optimized recipe for GaN film was developed, and the effect of substrate temperature was studied in both self-limiting growth window and thermal decomposition-limited growth region. With increased substrate temperature, film crystallinity improved, and the optical band edge decreased from 3.60 to 3.52 eV. The refractive index and reflectivity in Reststrahlen band increased with the substrate temperature. Compressive strain is observed for both samples, and the surface roughness is observed to increase with the substrate temperature. Despite these temperature dependent material properties,more » the chemical composition, E{sub 1}(TO), phonon position, and crystalline phases present in the GaN film were relatively independent from growth temperature.« less

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

NASA Astrophysics Data System (ADS)

Kyle, Erin C. H.; Kaun, Stephen W.; Young, Erin C.; Speck, James S.

2015-06-01

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5-6 × 1019 cm-3 as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 1018 cm-3. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils.

PubMed

Kim, Hyeryun; Ohta, Jitsuo; Ueno, Kohei; Kobayashi, Atsushi; Morita, Mari; Tokumoto, Yuki; Fujioka, Hiroshi

2017-05-18

GaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient solid-state light sources capable of replacing conventional incandescent and fluorescent lamps. However, their applications are limited to small devices because their fabrication process is expensive as it involves epitaxial growth of GaN by metal-organic chemical vapor deposition (MOCVD) on single crystalline sapphire wafers. If a low-cost epitaxial growth process such as sputtering on a metal foil can be used, it will be possible to fabricate large-area and flexible GaN-based light-emitting displays. Here we report preparation of GaN films on nearly lattice-matched flexible Hf foils using pulsed sputtering deposition (PSD) and demonstrate feasibility of fabricating full-color GaN-based LEDs. It was found that introduction of low-temperature (LT) grown layers suppressed the interfacial reaction between GaN and Hf, allowing the growth of high-quality GaN films on Hf foils. We fabricated blue, green, and red LEDs on Hf foils and confirmed their normal operation. The present results indicate that GaN films on Hf foils have potential applications in fabrication of future large-area flexible GaN-based optoelectronics.

Ambient-temperature diffusion and gettering of Pt atoms in GaN with surface defect region under 60Co gamma or MeV electron irradiation

NASA Astrophysics Data System (ADS)

Hou, Ruixiang; Li, Lei; Fang, Xin; Xie, Ziang; Li, Shuti; Song, Weidong; Huang, Rong; Zhang, Jicai; Huang, Zengli; Li, Qiangjie; Xu, Wanjing; Fu, Engang; Qin, G. G.

2018-01-01

Generally, the diffusion and gettering of impurities in GaN needs high temperature. Calculated with the ambient-temperature extrapolation value of the high temperature diffusivity of Pt atoms in GaN reported in literature, the time required for Pt atoms diffusing 1 nm in GaN at ambient temperature is about 19 years. Therefore, the ambient-temperature diffusion and gettering of Pt atoms in GaN can hardly be observed. In this work, the ambient-temperature diffusion and gettering of Pt atoms in GaN is reported for the first time. It is demonstrated by use of secondary ion mass spectroscopy that in the condition of introducing a defect region on the GaN film surface by plasma, and subsequently, irradiated by 60Co gamma-ray or 3 MeV electrons, the ambient-temperature diffusion and gettering of Pt atoms in GaN can be detected. It is more obvious with larger irradiation dose and higher plasma power. With a similar surface defect region, the ambient-temperature diffusion and gettering of Pt atoms in GaN stimulated by 3 MeV electron irradiation is more marked than that stimulated by gamma irradiation. The physical mechanism of ambient-temperature diffusion and gettering of Pt atoms in a GaN film with a surface defect region stimulated by gamma or MeV electron irradiation is discussed.

Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Mahesh; Roul, Basanta; Central Research Laboratory, Bharat Electronics, Bangalore 560013

High-quality GaN epilayers were grown on Si (1 1 1) substrates by molecular beam epitaxy using a new growth process sequence which involved a substrate nitridation at low temperatures, annealing at high temperatures, followed by nitridation at high temperatures, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. The material quality of the GaN films was also investigated as a function of nitridation time and temperature. Crystallinity and surface roughness of GaN was found to improve when the Si substrate was treated under the new growth process sequence. Micro-Raman and photoluminescence (PL) measurement results indicate that the GaN filmmore » grown by the new process sequence has less tensile stress and optically good. The surface and interface structures of an ultra thin silicon nitride film grown on the Si surface are investigated by core-level photoelectron spectroscopy and it clearly indicates that the quality of silicon nitride notably affects the properties of GaN growth.« less

Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams

NASA Astrophysics Data System (ADS)

Uedono, Akira; Nabatame, Toshihide; Egger, Werner; Koschine, Tönjes; Hugenschmidt, Christoph; Dickmann, Marcel; Sumiya, Masatomo; Ishibashi, Shoji

2018-04-01

Defects in the Al2O3(25 nm)/GaN structure were probed by using monoenergetic positron beams. Al2O3 films were deposited on GaN by atomic layer deposition at 300 °C. Temperature treatment above 800 °C leads to the introduction of vacancy-type defects in GaN due to outdiffusion of atoms from GaN into Al2O3. The width of the damaged region was determined to be 40-50 nm from the Al2O3/GaN interface, and some of the vacancies were identified to act as electron trapping centers. In the Al2O3 film before and after annealing treatment at 300-900 °C, open spaces with three different sizes were found to coexist. The density of medium-sized open spaces started to decrease above 800 °C, which was associated with the interaction between GaN and Al2O3. Effects of the electron trapping/detrapping processes of interface states on the flat band voltage and the defects in GaN were also discussed.

Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer

NASA Astrophysics Data System (ADS)

Nakai, Hiroshi; Sugiyama, Mutsumi; Chichibu, Shigefusa F.

2017-05-01

Gallium nitride (GaN) and related (Al,Ga,In)N alloys provide practical benefits in the production of light-emitting diodes (LEDs) and laser diodes operating in ultraviolet (UV) to green wavelength regions. However, obtaining low resistivity p-type AlN or AlGaN of large bandgap energies (Eg) is a critical issue in fabricating UV and deep UV-LEDs. NiO is a promising candidate for useful p-type transparent-semiconducting films because its Eg is 4.0 eV and it can be doped into p-type conductivity of sufficiently low resistivity. By using these technologies, heterogeneous junction diodes consisting of a p-type transparent-semiconducting polycrystalline NiO film on an n-type single crystalline GaN epilayer on a low threading-dislocation density, free-standing GaN substrate were fabricated. The NiO film was deposited by using the conventional RF-sputtering method, and the GaN homoepitaxial layer was grown by metalorganic vapor phase epitaxy. They exhibited a significant photovoltaic effect under UV light and also exhibited an electroluminescence peak at 3.26 eV under forward-biased conditions. From the conduction and valence band (EV) discontinuities, the NiO/GaN heterointerface is assigned to form a staggered-type (TYPE-II) band alignment with the EV of NiO higher by 2.0 eV than that of GaN. A rectifying property that is consistent with the proposed band diagram was observed in the current-voltage characteristics. These results indicate that polycrystalline NiO functions as a hole-extracting and injecting layer of UV optoelectronic devices.

p-type zinc-blende GaN on GaAs substrates

NASA Astrophysics Data System (ADS)

Lin, M. E.; Xue, G.; Zhou, G. L.; Greene, J. E.; Morkoç, H.

1993-08-01

We report p-type cubic GaN. The Mg-doped layers were grown on vicinal (100) GaAs substrates by plasma-enhanced molecular beam epitaxy. Thermally sublimed Mg was, with N2 carrier gas, fed into an electron-cyclotron resonance source. p-type zinc-blende-structure GaN films were achieved with hole mobilities as high as 39 cm2/V s at room temperature. The cubic nature of the films were confirmed by x-ray diffractometry. The depth profile of Mg was investigated by secondary ions mass spectroscopy.

Recovery of GaN surface after reactive ion etching

NASA Astrophysics Data System (ADS)

Fan, Qian; Chevtchenko, S.; Ni, Xianfeng; Cho, Sang-Jun; Morko, Hadis

2006-02-01

Surface properties of GaN subjected to reactive ion etching and the impact on device performance have been investigated by surface potential, optical and electrical measurements. Different etching conditions were studied and essentially high power levels and low chamber pressures resulted in higher etch rates accompanying with the roughening of the surface morphology. Surface potential for the as-grown c-plane GaN was found to be in the range of 0.5~0.7 V using Scanning Kevin Probe Microscopy. However, after reactive ion etching at a power level of 300 W, it decreased to 0.1~0.2 V. A nearly linear reduction was observed on c-plane GaN with increasing power. The nonpolar a-plane GaN samples also showed large surface band bending before and after etching. Additionally, the intensity of the near band-edge photoluminescence decreased and the free carrier density increased after etching. These results suggest that the changes in the surface potential may originate from the formation of possible nitrogen vacancies and other surface oriented defects and adsorbates. To recover the etched surface, N II plasma, rapid thermal annealing, and etching in wet KOH were performed. For each of these methods, the surface potential was found to increase by 0.1~0.3 V, also the reverse leakage current in Schottky diodes fabricated on treated samples was reduced considerably compared with as-etched samples, which implies a partial-to-complete recovery from the plasma-induced damage.

Measurement of second order susceptibilities of GaN and AlGaN

NASA Astrophysics Data System (ADS)

Sanford, N. A.; Davydov, A. V.; Tsvetkov, D. V.; Dmitriev, A. V.; Keller, S.; Mishra, U. K.; DenBaars, S. P.; Park, S. S.; Han, J. Y.; Molnar, R. J.

2005-03-01

Rotational Maker fringes, scaled with respect to χ11(2) of crystalline quartz, were used to determine the second order susceptibilities χ31(2) and χ33(2) for samples of thin AlxGa1-xN films, a thicker GaN film, and a free-standing GaN platelets. The pump wavelength was 1064nm. The AlxGa1-xN samples, ranging in thickness from roughly 0.5to4.4μm, were grown by metalorganic chemical vapor deposition (MOCVD) and hydride vapor-phase epitaxy (HVPE) on (0001) sapphire substrates. The Al mole fractions x were 0, 0.419, 0.507, 0.618, 0.660, and 0.666, for the MOCVD-grown samples, and x =0, 0.279, 0.363, and 0.593 for the HVPE-grown samples. An additional HVPE-grown GaN sample ˜70μm thick was also examined. The free-standing bulk GaN platelets consisted of an HVPE grown film ˜226μm thick removed from its growth substrate, and a crystal ˜160μm thick grown by high-pressure techniques. For the AlxGa1-xN samples, the magnitudes of χ31(2) and χ33(2) decrease roughly linearly with increasing x and extrapolate to ˜0 for x =1. Furthermore, the constraint expected for a perfect wurtzite structure, namely χ33(2)=-2χ31(2), was seldom observed, and the samples with x =0.660 and x =0.666 showed χ31(2) and χ33(2) having the same sign. These results are consistent with the theoretical studies of nonlinear susceptibilities for AlN and GaN performed by Chen et al. [Appl. Phys. Lett. 66, 1129 (1995)]. The thicker bulk GaN samples displayed a complex superposition of high- and low-frequency Maker fringes due to the multiple-pass interference of the pump and second-harmonic generation beams, and the nonlinear coefficients were approximately consistent with those measured for the thin-film GaN sample.

Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ibanez, J.; Hernandez, S.; Alarcon-Llado, E.

2008-08-01

We present a far-infrared transmission study on group-III nitride thin films. Cubic GaN and AlN layers and c-oriented wurtzite GaN, AlN, and Al{sub x}Ga{sub 1-x}N (x<0.3) layers were grown by molecular beam epitaxy on GaAs and Si(111) substrates, respectively. The Berreman effect allows us to observe simultaneously the transverse optic and the longitudinal optic phonons of both the cubic and the hexagonal films as transmission minima in the infrared spectra acquired with obliquely incident radiation. We discuss our results in terms of the relevant electromagnetic theory of infrared transmission in cubic and wurtzite thin films. We compare the infrared resultsmore » with visible Raman-scattering measurements. In the case of films with low scattering volumes and/or low Raman efficiencies and also when the Raman signal of the substrate material obscures the weaker peaks from the nitride films, we find that the Berreman technique is particularly useful to complement Raman spectroscopy.« less

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

NASA Astrophysics Data System (ADS)

Ueno, Kohei; Fudetani, Taiga; Arakawa, Yasuaki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

2017-12-01

We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD) technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm-3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V-1 s-1 at a carrier concentration of 3.9 × 1020 cm-3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

Three-Dimensional Hetero-Integration of Faceted GaN on Si Pillars for Efficient Light Energy Conversion Devices.

PubMed

Kim, Dong Rip; Lee, Chi Hwan; Cho, In Sun; Jang, Hanmin; Jeon, Min Soo; Zheng, Xiaolin

2017-07-25

An important pathway for cost-effective light energy conversion devices, such as solar cells and light emitting diodes, is to integrate III-V (e.g., GaN) materials on Si substrates. Such integration first necessitates growth of high crystalline III-V materials on Si, which has been the focus of many studies. However, the integration also requires that the final III-V/Si structure has a high light energy conversion efficiency. To accomplish these twin goals, we use single-crystalline microsized Si pillars as a seed layer to first grow faceted Si structures, which are then used for the heteroepitaxial growth of faceted GaN films. These faceted GaN films on Si have high crystallinity, and their threading dislocation density is similar to that of GaN grown on sapphire. In addition, the final faceted GaN/Si structure has great light absorption and extraction characteristics, leading to improved performance for GaN-on-Si light energy conversion devices.

High In-content InGaN nano-pyramids: Tuning crystal homogeneity by optimized nucleation of GaN seeds

NASA Astrophysics Data System (ADS)

Bi, Zhaoxia; Gustafsson, Anders; Lenrick, Filip; Lindgren, David; Hultin, Olof; Wallenberg, L. Reine; Ohlsson, B. Jonas; Monemar, Bo; Samuelson, Lars

2018-01-01

Uniform arrays of submicron hexagonal InGaN pyramids with high morphological and material homogeneity, reaching an indium composition of 20%, are presented in this work. The pyramids were grown by selective area metal-organic vapor phase epitaxy and nucleated from small openings in a SiN mask. The growth selectivity was accurately controlled with diffusion lengths of the gallium and indium species, more than 1 μm on the SiN surface. High material homogeneity of the pyramids was achieved by inserting a precisely formed GaN pyramidal seed prior to InGaN growth, leading to the growth of well-shaped InGaN pyramids delimited by six equivalent {" separators="| 10 1 ¯ 1 } facets. Further analysis reveals a variation in the indium composition to be mediated by competing InGaN growth on two types of crystal planes, {" separators="| 10 1 ¯ 1 } and (0001). Typically, the InGaN growth on {" separators="| 10 1 ¯ 1 } planes is much slower than on the (0001) plane. The formation of the (0001) plane and the growth of InGaN on it were found to be dependent on the morphology of the GaN seeds. We propose growth of InGaN pyramids seeded by {" separators="| 10 1 ¯ 1 }-faceted GaN pyramids as a mean to avoid InGaN material grown on the otherwise formed (0001) plane, leading to a significant reduction of variations in the indium composition in the InGaN pyramids. The InGaN pyramids in this work can be used as a high-quality template for optoelectronic devices having indium-rich active layers, with a potential of reaching green, yellow, and red emissions for LEDs.

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kyle, Erin C. H., E-mail: erinkyle@engineering.ucsb.edu; Kaun, Stephen W.; Young, Erin C.

2015-06-01

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5–6 × 10{sup 19} cm{sup −3} as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration wasmore » 1.6 × 10{sup 18} cm{sup −3}. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.« less

Optical Probing of Low-Pressure Solution Grown GaN Crystal Properties

DTIC Science & Technology

2010-04-01

observed in Mg and Si doped epitaxial films deposited by MBE and MOCVD on freestanding GaN HVPE substrates [23–25]. Considering the purity of the precursors...bands with similar energy positions here reported, a dominant deeper acceptor impurity has been assigned to Zn , a well known deep acceptor in GaN . Room...00-00-2010 to 00-00-2010 4. TITLE AND SUBTITLE Optical probing of low-pressure solution grown GaN crystal properties 5a. CONTRACT NUMBER 5b

Growth, Structural, Electronic, and Magnetic Characterization of GaN, CrN, Fe Islands on CrN, and Fe/CrN Bilayer Thin Films

NASA Astrophysics Data System (ADS)

Alam, Khan

As a part of my Ph.D research, initially I was involved in construction and calibration of an ultra-high vacuum thin film facility, and later on I studied structural, electronic, and magnetic properties of GaN, CrN, Fe/CrN bilayers, and Fe islands on CrN thin films. All of these films were grown by molecular beam epitaxy and characterized with a variety of state-of-the-art techniques including variable temperature reflection high energy electron diffraction, low temperature scanning tunneling microscopy and spectroscopy, variable temperature vibrating sample magnetometry, variable temperature neutron diffraction and reflectometry, variable temperature x-ray diffraction, x-ray reflectometry, Rutherford backscattering, Auger electron spectroscopy, and cross-sectional tunneling electron microscopy. The experimental results are furthermore understood by comparing with numerical calculations using generalized gradient approximation, local density approximation with Hubbard correction, Refl1D, and data analysis and visual environment program. In my first research project, I studied Ga gas adatoms on GaN surfaces. We discovered frozen-out gallium gas adatoms on atomically smooth c(6x12) GaN(0001¯) surface using low temperature scanning tunneling microscopy. We identified adsorption sites of the Ga adatoms on c(6x12) reconstructed surface. Their bonding is determined by measuring low unoccupied molecular orbital level. Absorption sites of the Ga gas adatoms on centered 6x12 are identified, and their asymmetric absorption on the chiral domains is investigated. In second project, I investigated magneto-structural phase transition in chromium nitride (CrN) thin films. The CrN thin films are grown by molecular beam epitaxy. Structural and magnetic transition are studied using variable temperature reflection high energy electron diffraction and variable temperature neutron diffraction. We observed a structural phase transition at the surface at 277+/-2 K, and a sharp, first-order magnetic phase transition from paramagnetic (room temperature) to antiferromagnetic (low temperature) at 280+/-3 K. Our experiments suggest that the structural transition in CrN thin films occur in out-of-plane direction, and epitaxial constraints suppress the in-plane transition; therefore, the low temperature crystal structure of CrN is tetragonal. This new model explains our structural and magnetic data at low temperatures, but it is different than the previously published orthorhombic model. In third project, I studied exchange bias and exchange spring effect in MBE grown Fe/CrN bilayer thin films. We grew Fe/CrN bilayer thin films on MgO(001) substrate by molecular beam epitaxy, and studied them using variable temperature vibrating sample magnetometry, polarized neutron reflectometry, x-ray reflectivity, and cross-sectional transmission electron microscopy. We observed exchange bias and exchange spring effect in all bilayer thin films. We studied the relationship of exchange bias, blocking temperature, and coercivity with Fe and CrN layers thicknesses. We used polarized neutron beam reflectometry to see if spins at Fe/CrN interface are pinned. We found a thin ferromagnetically ordered CrN layer at the interface. In my final project, I studied growth of submonolayer Fe islands on CrN thin films. These films are prepared in two stages: first, a CrN layer is grown by MBE and then a submonolayer Fe is deposited at room temperature from a carefully degassed e-beam evaporator. The films are studied at liquid helium temperature using low temperature scanning tunneling microscopy and spectroscopy. Islands are seen in STM images, after the Fe deposition, at the edges as well as at the center of atomically flat CrN terraces. However, numerical calculations performed by our collaborator Ponce-P'erez from Benem'erita Universidad Aut'onoma de Puebla show that the Fe islands are energetically unstable on the surface. The Fe atoms substitute Cr atoms in the surface layer and the Cr atoms comes out and form islands. In order to find out elemental composition of the islands, we attempted to map local density of state by measuring differential conductance spectra as a function of bias voltage using LT-STS. We observed three characteristically different spectra; one in the CrN substrate and two in the islands. The CrN substrate curve has a "U" shape near Fermi level and a peak at ≈ 105 mV. The islands spectra show Kondo-like resonances at Fermi level; some islands produce a peak whereas others produce a dip the dI/dV curves near Fermi level. Further investigations are needed to determine the origin of the peak and dip in the island curves, as well as to find the composition of the islands.

Hydrogen incorporation in high hole density GaN:Mg

NASA Astrophysics Data System (ADS)

Zvanut, M. E.; Uprety, Y.; Dashdorj, J.; Moseley, M.; Doolittle, W. Alan

2011-03-01

We investigate hydrogen passivation in heavily doped p-type GaN using electron paramagnetic resonance (EPR) spectroscopy. Samples include both conventionally grown GaN (1019 cm-3 Mg, 1017 cm-3 holes) and films grown by metal modulation epitaxy (MME), which yielded higher Mg (1- 4 x 1020 cm-3) and hole (1- 40 x 1018 cm-3) densities than found in conventionally grown GaN. The Mg acceptor signal is monitored throughout 30 minute annealing steps in N2 :H2 (92%:7%)) and subsequently pure N2 . N2 :H2 heat treatments of the lower hole density films begin to reduce the Mg EPR intensity at 750 o C, but quench the signal in high hole density films at 600 o C. Revival of the signal by subsequent N2 annealing occurs at 800 o C for the low hole density material and 600 o C in MME GaN. The present work highlights chemical differences between heavily Mg doped and lower doped films; however, it is unclear whether the difference is due to changes in hydrogen-Mg complex formation or hydrogen diffusion. The work at UAB is supported by the NSF.

Understanding luminescence properties of grain boundaries in GaN thin films and their atomistic origin

NASA Astrophysics Data System (ADS)

Yoo, Hyobin; Yoon, Sangmoon; Chung, Kunook; Kang, Seoung-Hun; Kwon, Young-Kyun; Yi, Gyu-Chul; Kim, Miyoung

2018-03-01

We report our findings on the optical properties of grain boundaries in GaN films grown on graphene layers and discuss their atomistic origin. We combine electron backscatter diffraction with cathodoluminescence to directly correlate the structural defects with their optical properties, enabling the high-precision local luminescence measurement of the grain boundaries in GaN films. To further understand the atomistic origin of the luminescence properties, we carefully probed atomic core structures of the grain boundaries by exploiting aberration-corrected scanning transmission electron microscopy. The atomic core structures of grain boundaries show different ordering behaviors compared with those observed previously in threading dislocations. Energetics of the grain boundary core structures and their correlation with electronic structures were studied by first principles calculation.

Epitaxy of Zn{sub 2}TiO{sub 4} (1 1 1) thin films on GaN (0 0 1)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hsiao, Chu-Yun; Wu, Jhih-Cheng; Shih, Chuan-Feng, E-mail: cfshih@mail.ncku.edu.tw

2013-03-15

Highlights: ► High-permittivity spinel Zn{sub 2}TiO{sub 4} thin films were grown on GaN (0 0 1) by sputtering. ► Oxygen atmosphere and post heat-treatment annealing effectively enhanced epitaxy. ► The epitaxial Zn{sub 2}TiO{sub 4} modifies the dielectric properties of ceramic oxide. - Abstract: High-permittivity spinel Zn{sub 2}TiO{sub 4} thin films were grown on GaN (0 0 1) by rf-sputtering. Grazing-angle, powder, and pole-figure X-ray diffractometries (XRD) were performed to identify the crystallinity and the preferred orientation of the Zn{sub 2}TiO{sub 4} films. Lattice image at the Zn{sub 2}TiO{sub 4} (1 1 1)/GaN (0 0 1) interface was obtained by high-resolutionmore » transmission-electron microscopy (HR-TEM). An oxygen atmosphere in sputtering and post heat-treatment using rapid thermal annealing effectively enhanced the epitaxy. The epitaxial relationship was determined from the XRD and HR-TEM results: (111){sub Zn{sub 2TiO{sub 4}}}||(001){sub GaN}, (202{sup ¯}){sub Zn{sub 2TiO{sub 4}}}||(110){sub GaN},and[21{sup ¯}1{sup ¯}]{sub Zn{sub 2TiO{sub 4}}}||[01{sup ¯}10]{sub GaN}. Finally, the relative permittivity, interfacial trap density and the flat-band voltage of the Zn{sub 2}TiO{sub 4} based capacitor were ∼18.9, 8.38 × 10{sup 11} eV{sup −1} cm{sup −2}, and 1.1 V, respectively, indicating the potential applications of the Zn{sub 2}TiO{sub 4} thin film to the GaN-based metal-oxide-semiconductor capacitor.« less

Effects of the ZnO layer on the structure and white light emission properties of a ZnS:Mn/GaN nanocomposite system.

PubMed

Wang, Cai-Feng; Hu, Bo

2017-10-01

ZnO films were inserted between the ZnS:Mn films and GaN substrates by pulsed laser deposition (PLD). The structure, morphology, and optical properties of the ZnS:Mn/ZnO/GaN nanocomposite systems have been investigated. X-ray diffraction results show that there are three diffraction peaks located at 28.4°, 34.4°, and 34.1°, which correspond to the β-ZnS(111), ZnO(002), and GaN(002) planes, respectively. Due to the insertion of ZnO films, the diffraction peak intensity of ZnS:Mn in ZnS:Mn/ZnO/GaN is stronger than that of ZnS:Mn in ZnS:Mn/GaN, and the full width at half-maximum is smaller. Though the transmittance of ZnS:Mn/ZnO films is slightly lower than that of ZnS:Mn films, the transmittance is still higher than 80%. Compared with ZnS:Mn/GaN, an ultraviolet (UV) emission at 387 nm (originated from the near-band emission of ZnO) and a green light emission at about 520 nm appeared in the photoluminescence (PL) spectra of ZnS:Mn/ZnO/GaN, in addition to the blue emission at 435 nm and the orange-red emission at 580 nm. The emission at 520 nm may be related to the deep-level emission from ZnO and the interface of ZnS:Mn/ZnO. The PL spectrum of ZnS:Mn/ZnO/GaN covers the visible region from the blue light to the red light (400-700 nm), and its color coordinate and color temperature are (0.3103,0.3063) and 6869 K, respectively, presenting strong white light emission.

Selected Growth of Cubic and Hexagonal GaN Epitaxial Films on Polar MgO(111)

NASA Astrophysics Data System (ADS)

Lazarov, V. K.; Zimmerman, J.; Cheung, S. H.; Li, L.; Weinert, M.; Gajdardziska-Josifovska, M.

2005-06-01

Selected molecular beam epitaxy of zinc blende (111) or wurtzite (0001) GaN films on polar MgO(111) is achieved depending on whether N or Ga is deposited first. The cubic stacking is enabled by nitrogen-induced polar surface stabilization, which yields a metallic MgO(111)-(1×1)-ON surface. High-resolution transmission electron microscopy and density functional theory studies indicate that the atomically abrupt semiconducting GaN(111)/MgO(111) interface has a Mg-O-N-Ga stacking, where the N atom is bonded to O at a top site. This specific atomic arrangement at the interface allows the cubic stacking to more effectively screen the substrate and film electric dipole moment than the hexagonal stacking, thus stabilizing the zinc blende phase even though the wurtzite phase is the ground state in the bulk.

(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bai, J., E-mail: j.bai@sheffield.ac.uk; Xu, B.; Guzman, F. G.

2015-12-28

We demonstrate semipolar InGaN single-quantum-well light emitting diodes (LEDs) in the green, yellow-green, yellow and amber spectral region. The LEDs are grown on our overgrown semipolar (11-22) GaN on micro-rod array templates, which are fabricated on (11-22) GaN grown on m-plane sapphire. Electroluminescence measurements on the (11-22) green LED show a reduced blue-shift in the emission wavelength with increasing driving current, compared to a reference commercial c-plane LED. The blue-shifts for the yellow-green and yellow LEDs are also significantly reduced. All these suggest an effective suppression in quantum confined Stark effect in our (11-22) LEDs. On-wafer measurements yield a linearmore » increase in the light output with the current, and external quantum efficiency demonstrates a significant improvement in the efficiency-droop compared to a commercial c-plane LED. Electro-luminescence polarization measurements show a polarization ratio of about 25% in our semipolar LEDs.« less

Polarization of stacking fault related luminescence in GaN nanorods

NASA Astrophysics Data System (ADS)

Pozina, G.; Forsberg, M.; Serban, E. A.; Hsiao, C.-L.; Junaid, M.; Birch, J.; Kaliteevski, M. A.

2017-01-01

Linear polarization properties of light emission are presented for GaN nanorods (NRs) grown along [0001] direction on Si(111) substrates by direct-current magnetron sputter epitaxy. The near band gap photoluminescence (PL) measured at low temperature for a single NR demonstrated an excitonic line at ˜3.48 eV and the stacking faults (SFs) related transition at ˜3.43 eV. The SF related emission is linear polarized in direction perpendicular to the NR growth axis in contrast to a non-polarized excitonic PL. The results are explained in the frame of the model describing basal plane SFs as polymorphic heterostructure of type II, where anisotropy of chemical bonds at the interfaces between zinc blende and wurtzite GaN subjected to in-built electric field is responsible for linear polarization parallel to the interface planes.

Relationship between dislocation and the visible luminescence band observed in ZnO epitaxial layers grown on c-plane p-GaN templates by chemical vapor deposition technique

NASA Astrophysics Data System (ADS)

Saroj, Rajendra K.; Dhar, S.

2016-08-01

ZnO epitaxial layers are grown on c-plane GaN (p-type)/sapphire substrates using a chemical vapor deposition technique. Structural and luminescence properties of these layers have been studied systematically as a function of various growth parameters. It has been found that high quality ZnO epitaxial layers can indeed be grown on GaN films at certain optimum conditions. It has also been observed that the growth temperature and growth time have distinctly different influences on the screw and edge dislocation densities. While the growth temperature affects the density of edge dislocations more strongly than that of screw dislocations, an increase of growth duration leads to a rapid drop in the density of screw dislocation, whereas the density of edge dislocation hardly changes. Densities of both edge and screw dislocations are found to be minimum at a growth temperature of 500 °C. Interestingly, the defect related visible luminescence intensity also shows a minimum at the same temperature. Our study indeed suggests that the luminescence feature is related to threading edge dislocation. A continuum percolation model, where the defects responsible for visible luminescence are considered to be formed under the influence of the strain field surrounding the threading edge dislocations, is proposed. The theory explains the observed variation of the visible luminescence intensity as a function of the concentration of the dislocations.

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

NASA Astrophysics Data System (ADS)

Wang, Y. D.; Zang, K. Y.; Chua, S. J.; Tripathy, S.; Chen, P.; Fonstad, C. G.

2005-12-01

We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

Hydrogen effects on the electroluminescence of n-ZnO nanorod/p-GaN film heterojunction light-emitting diodes.

PubMed

Fang, Fang; Zhao, Dongxu; Li, Binghui; Zhang, Zhenzhong; Shen, Dezhen

2010-07-07

Through a facile low-temperature solution process, vertically n-type ZnO nanorod arrays were grown on a GaN film to form a n-ZnO nanorod/p-GaN film heterojunction. A study of the electroluminescence (EL) characteristics of the heterojunction in air and in air with 2000 ppm hydrogen revealed the sensitivity of such a device to the surrounding atmosphere. The additional hydrogen shallow donors increased the effective electron concentration in ZnO nanorods and the EL recombination zone changed from the ZnO nanorods to the GaN film, which can be identified visually from the color change.

Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, X. Q.; Takahashi, T.; Matsuhata, H.

2013-12-02

We investigate the role of an ultra-thin AlN/GaN superlattice interlayer (SL-IL) on the strain engineering of the GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy. It is found that micro-cracks limitted only at the SL-IL position are naturally generated. These micro-cracks play an important role in relaxing the tensile strain caused by the difference of the coefficient of thermal expansion between GaN and Si and keeping the residual strain in the crack-free GaN epilayers resulted from the SL-IL during the growth. The mechanism understanding of the strain modulation by the SL-IL in the GaN epilayersmore » grown on Si substrates makes it possible to design new heterostructures of III-nitrides for optic and electronic device applications.« less

Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Shen, X. Q.; Takahashi, T.; Rong, X.; Chen, G.; Wang, X. Q.; Shen, B.; Matsuhata, H.; Ide, T.; Shimizu, M.

2013-12-01

We investigate the role of an ultra-thin AlN/GaN superlattice interlayer (SL-IL) on the strain engineering of the GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy. It is found that micro-cracks limitted only at the SL-IL position are naturally generated. These micro-cracks play an important role in relaxing the tensile strain caused by the difference of the coefficient of thermal expansion between GaN and Si and keeping the residual strain in the crack-free GaN epilayers resulted from the SL-IL during the growth. The mechanism understanding of the strain modulation by the SL-IL in the GaN epilayers grown on Si substrates makes it possible to design new heterostructures of III-nitrides for optic and electronic device applications.

Electrical current flow at conductive nanowires formed in GaN thin films by a dislocation template technique

NASA Astrophysics Data System (ADS)

Amma, Shin-ichi; Tokumoto, Yuki; Edagawa, Keiichi; Shibata, Naoya; Mizoguchi, Teruyasu; Yamamoto, Takahisa; Ikuhara, Yuichi

2010-05-01

Conductive nanowires were fabricated in GaN thin film by selectively doping of Al along threading dislocations. Electrical current flow localized at the nanowires was directly measured by a contact mode atomic force microscope. The current flow at the nanowires was considered to be Frenkel-Poole emission mode, suggesting the existence of the deep acceptor level along the nanowires as a possible cause of the current flow. The results obtained in this study show the possibility for fabricating nanowires using pipe-diffusion at dislocations in solid thin films.

Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bengoechea-Encabo, A.; Albert, S.; Barbagini, F.

The aim of this work is the selective area growth (SAG) of GaN nanocolumns, with and without an InGaN insertion, by molecular beam epitaxyon semi-polar (11–22) GaN templates. The high density of stacking faults present in the template is strongly reduced after SAG. A dominant sharp photoluminescence emission at 3.473 eV points to high quality strain-free material. When embedding an InGaN insertion into the ordered GaN nanostructures, very homogeneous optical properties are observed, with two emissions originating from different regions of each nanostructure, most likely related to different In contents on different crystallographic planes.

Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN

NASA Astrophysics Data System (ADS)

Mishkat-Ul-Masabih, Saadat; Luk, Ting Shan; Rishinaramangalam, Ashwin; Monavarian, Morteza; Nami, Mohsen; Feezell, Daniel

2018-01-01

We report the fabrication of m-plane nanoporous distributed Bragg reflectors (DBRs) on free-standing GaN substrates. The DBRs consist of 15 pairs of alternating undoped and highly doped n-type ([Si] = ˜3.7 × 1019 cm-3) GaN. Electrochemical (EC) etching was performed to convert the highly doped regions into a porous material, consequently reducing the effective refractive index of the layers. We demonstrate a DBR with peak reflectance greater than 98% at 450 nm with a stopband width of ˜72 nm. The polarization ratio of an incident polarized light source remains identical after reflection from the DBR, verifying that there is no drop in the polarization ratio due to the interfaces between the porous layers. We also quantify the porosity under various EC bias conditions for layers with different doping concentrations. The bias voltage controls the average pore diameter, while the pore density is primarily determined by the doping concentration. The results show that nanoporous DBRs on nonpolar free-standing GaN are promising candidates for high-reflectance, lattice-matched DBR mirrors for GaN-based resonant cavity devices.

Polarization-free integrated gallium-nitride photonics

PubMed Central

Bayram, C.; Liu, R.

2017-01-01

Gallium Nitride (GaN) materials are the backbone of emerging solid state lighting. To date, GaN research has been primarily focused on hexagonal phase devices due to the natural crystallization. This approach limits the output power and efficiency of LEDs, particularly in the green spectrum. However, GaN can also be engineered to be in cubic phase. Cubic GaN has a lower bandgap (~200 meV) than hexagonal GaN that enables green LEDs much easily. Besides, cubic GaN has more isotropic properties (smaller effective masses, higher carrier mobility, higher doping efficiency, and higher optical gain than hexagonal GaN), and cleavage planes. Due to phase instability, however, cubic phase materials and devices have remained mostly unexplored. Here we review a new method of cubic phase GaN generation: Hexagonal-to-cubic phase transition, based on novel nano-patterning. We report a new crystallographic modelling of this hexagonal-to-cubic phase transition and systematically study the effects of nano-patterning on the GaN phase transition via transmission electron microscopy and electron backscatter diffraction experiments. In summary, silicon-integrated cubic phase GaN light emitters offer a unique opportunity for exploration in next generation photonics. PMID:29307953

Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates: Metal work function dependence of Schottky barrier height

NASA Astrophysics Data System (ADS)

Imadate, Hiroyoshi; Mishima, Tomoyoshi; Shiojima, Kenji

2018-04-01

We report the electrical characteristics of Schottky contacts with nine different metals (Ag, Ti, Cr, W, Mo, Au, Pd, Ni, and Pt) formed on clean m-plane surfaces by cleaving freestanding GaN substrates, compared with these of contacts on Ga-polar c-plane n-GaN surfaces grown on GaN substrates. The n-values from the forward current–voltage (I–V) characteristics are as good as 1.02–1.18 and 1.02–1.09 for the m- and c-plane samples, respectively. We found that the reverse I–V curves of both samples can be explained by the thermionic field emission theory, and that the Schottky barrier height of the cleaved m-plane contacts shows a metal work function dependence.

Partially filled intermediate band of Cr-doped GaN films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sonoda, S.

2012-05-14

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

The investigation of Al0.29Ga0.71N/GaN/AlN and AlN/GaN/AlN thin films grown on Si (111) by RF plasma-assisted MBE

NASA Astrophysics Data System (ADS)

Yusoff, Mohd Zaki Mohd; Mahyuddin, Azzafeerah; Hassan, Zainuriah; Hassan, Haslan Abu; Abdullah, Mat Johar

2012-06-01

Recently, gallium nitride (GaN) and its related compounds involving Al and In have attracted much attention because of their potential to be used as high-efficiency UV light emitting devices, and as high frequency and high power electronic devices. Consequently, the growth and physics of GaN-based materials have attracted remarkable scientific attention. In this work, the growth and characterization of epitaxial Al0.29Ga0.71N and AlN layers grown on Si (111) by RF-plasma assisted molecular beam epitaxy (MBE) are described. The Al mole fraction was derived from the HR-XRD symmetric rocking curve (RC) ω/2θ scans of (0002) plane as x = 0.29. For AlN/GaN/AlN sample, the maximum Raman intensity at 521.53 cm-1 is attributed to crystalline silicon. It was found that the allowed Raman optical phonon mode of GaN, the E1 (high) is clearly visible, which is located at 570.74 cm-1. Photoluminscence (PL) spectrums of both samples have shown sharp and intense band edge emission of GaN without the existence of yellow emission band, showing good crystal quality of the samples have been successfully grown on Si substrate.

Plasma-assisted MBE growth kinetics and characterization studies of wide bandgap III-V epitaxial materials

NASA Astrophysics Data System (ADS)

O'Steen, Mark Lee

2000-10-01

Scope and method of study. The purpose of this research was to understand the physics of RF plasma-assisted molecular beam epitaxial growth of GaN epitaxial films and InGaN/GaN superlattice structures grown on Al2O3 (0001) substrates. The techniques used to characterize the RF-MBE grown samples include in situ reflection high energy electron diffraction (RHEED) and optical pyrometry, and ex situ spatially-resolved high resolution X-ray diffraction, spatially-resolved reflectance spectroscopy, atomic force microscopy, and low-temperature photoluminescence (PL) spectroscopy. Findings and conclusions. RF plasma-assisted molecular beam epitaxy (RF-MBE) has been used to grow GaN epitaxial films and InGaN/GaN superlattice structures. The most important growth parameters in the growth of GaN epitaxial films were identified as the substrate temperature, incident N*/Ga flux ratio, and GaN growth rate. The effect of these growth parameters on GaN growth and quality of GaN epitaxial films is discussed. Additionally, an interpretation of the effects of growth conditions on the underlying microscopic growth processes occurring is presented. All of the observed GaN growth results may be understood in terms of these microscopic growth processes. InGaN/GaN superlattice samples are grown to identify and quantitatively access the InGaN growth phenomenology. It is inferred that InN requires a higher N*/III flux ratio than does GaN for stoichiometric growth. At substrate temperatures below 590°C, the In composition of the superlattice samples is nominally constant. However, in the narrow temperature range 590--670°C, the In composition decreases by more than an order-or-magnitude at the lowest N*/III flux ratio of this study. Additionally, the incident N*/III flux ratio is found to strongly influence the In composition as well. Nearly an order-of-magnitude increase in In composition is observed despite only a 20% increase in the N*/III flux ratio at the highest temperature of this study. RHEED and PL measurements support the assessment of the In reduction mechanism as thermally-activated surface-segregation and surface-desorption of In. Implications of these results for device growth are discussed.

Gallium Nitride (GaN) High Power Electronics (FY11)

DTIC Science & Technology

2012-01-01

GaN films grown by metal-organic chemical vapor deposition (MOCVD) and ~1010 in films grown by molecular beam epitaxy (MBE) when they are deposited...inductively coupled plasma I-V current-voltage L-HVPE low doped HVPE MBE molecular beam epitaxy MOCVD metal-organic chemical vapor deposition...figure of merit HEMT high electron mobility transistor H-HVPE high doped HVPE HPE high power electronics HVPE hydride vapor phase epitaxy ICP

Melioration of Optical and Electrical Performance of Ga-N Codoped ZnO Thin Films

NASA Astrophysics Data System (ADS)

Narayanan, Nripasree; Deepak, N. K.

2018-06-01

Transparent and conducting p-type zinc oxide (ZnO) thin films doped with gallium (Ga) and nitrogen (N) simultaneously were deposited on glass substrates by spray pyrolysis technique. Phase composition analysis by X-ray diffraction confirmed the polycrystallinity of the films with pure ZnO phase. Energy dispersive X-ray analysis showed excellent incorporation of N in the ZnO matrix by means of codoping. The optical transmittance of N monodoped film was poor but got improved with Ga-N codoping and also resulted in the enhancement of optical energy gap. Hole concentration increased with codoping and consequently, lower resistivity and high stability were obtained.

Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces

DOE PAGES

Xu, Dongwei; Zapol, Peter; Stephenson, G. Brian; ...

2017-04-12

The surface orientation can have profound effects on the atomic-scale processes of crystal growth and is essential to such technologies as GaN-based light-emitting diodes and high-power electronics. We investigate the dependence of homoepitaxial growth mechanisms on the surface orientation of a hexagonal crystal using kinetic Monte Carlo simulations. To model GaN metal-organic vapor phase epitaxy, in which N species are supplied in excess, only Ga atoms on a hexagonal close-packed (HCP) lattice are considered. The results are thus potentially applicable to any HCP material. Growth behaviors on c-plane (0001) and m-plane (011¯0) surfaces are compared. We present a reciprocal spacemore » analysis of the surface morphology, which allows extraction of growth mode boundaries and direct comparison with surface X-ray diffraction experiments. For each orientation, we map the boundaries between 3-dimensional, layer-by-layer, and step flow growth modes as a function of temperature and growth rate. Two models for surface diffusion are used, which produce different effective Ehrlich-Schwoebel step-edge barriers and different adatom diffusion anisotropies on m-plane surfaces. Simulation results in agreement with observed GaN island morphologies and growth mode boundaries are obtained. These indicate that anisotropy of step edge energy, rather than adatom diffusion, is responsible for the elongated islands observed on m-plane surfaces. As a result, island nucleation spacing obeys a power-law dependence on growth rate, with exponents of –0.24 and –0.29 for the m- and c-plane, respectively.« less

Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Dongwei; Zapol, Peter; Stephenson, G. Brian

The surface orientation can have profound effects on the atomic-scale processes of crystal growth and is essential to such technologies as GaN-based light-emitting diodes and high-power electronics. We investigate the dependence of homoepitaxial growth mechanisms on the surface orientation of a hexagonal crystal using kinetic Monte Carlo simulations. To model GaN metal-organic vapor phase epitaxy, in which N species are supplied in excess, only Ga atoms on a hexagonal close-packed (HCP) lattice are considered. The results are thus potentially applicable to any HCP material. Growth behaviors on c-plane (0001) and m-plane (011¯0) surfaces are compared. We present a reciprocal spacemore » analysis of the surface morphology, which allows extraction of growth mode boundaries and direct comparison with surface X-ray diffraction experiments. For each orientation, we map the boundaries between 3-dimensional, layer-by-layer, and step flow growth modes as a function of temperature and growth rate. Two models for surface diffusion are used, which produce different effective Ehrlich-Schwoebel step-edge barriers and different adatom diffusion anisotropies on m-plane surfaces. Simulation results in agreement with observed GaN island morphologies and growth mode boundaries are obtained. These indicate that anisotropy of step edge energy, rather than adatom diffusion, is responsible for the elongated islands observed on m-plane surfaces. As a result, island nucleation spacing obeys a power-law dependence on growth rate, with exponents of –0.24 and –0.29 for the m- and c-plane, respectively.« less

Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al2O3(0001)

NASA Astrophysics Data System (ADS)

Sundaravel, B.; Luo, E. Z.; Xu, J. B.; Wilson, I. H.; Fong, W. K.; Wang, L. S.; Surya, C.

2000-01-01

Rutherford backscattering spectrometry and ion channeling were used to determine the relative quantities of wurtzite and zinc-blende phases in metalorganic chemical vapor deposition grown Mg-doped GaN(0001) on an Al2O3(0001) substrate with a GaN buffer layer. Offnormal axial channeling scans were used. High-resolution x-ray diffraction measurements also confirmed the presence of mixed phases. The in-plane orientation was found to be GaN[11¯0]‖GaN[112¯0]‖Al2O3[112¯0]. The effects of rapid thermal annealing on the relative phase content, thickness and crystalline quality of the GaN epilayer were also studied.

A Microstructural Comparison of the Initial Growth of AIN and GaN Layers on Basal Plane Sapphire and SiC Substrates by Low Pressure Metalorganic Chemical Vapor Depositon

NASA Technical Reports Server (NTRS)

George, T.; Pike, W. T.; Khan, M. A.; Kuznia, J. N.; Chang-Chien, P.

1994-01-01

The initial growth by low pressure metalorganic chemical vapor deposition and subsequent thermal annealing of AIN and GaN epitaxial layers on SiC and sapphire substrates is examined using high resolution transmission electron microscopy and atomic force microscopy.

Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velazquez, R.; Rivera, M.; Feng, P., E-mail: p.feng@upr.edu

2016-08-15

High-quality single crystalline Gallium Nitride (GaN) semiconductor has been synthesized using molecule beam epitaxy (MBE) technique for development of high-performance deep ultraviolet (UV) photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM). Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN filmmore » in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably result in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.« less

Hydrogen-surfactant-assisted coherent growth of GaN on ZnO substrate

NASA Astrophysics Data System (ADS)

Zhang, Jingzhao; Zhang, Yiou; Tse, Kinfai; Zhu, Junyi

2018-01-01

Heterostructures of wurtzite based devices have attracted great research interest because of the tremendous success of GaN in light emitting diodes (LED) industry. High-quality GaN thin films on inexpensive and lattice matched ZnO substrates are both commercially and technologically desirable. Intrinsic wetting conditions, however, forbid such heterostructures as the energy of ZnO polar surfaces is much lower than that of GaN polar surfaces, resulting in 3D growth mode and poor crystal quality. Based on first-principles calculations, we propose the use of surfactant hydrogen to dramatically alter the growth mode of the heterostructures. Stable H-involved surface configurations and interfaces are investigated with the help of our newly developed modelling techniques. The temperature and chemical potential dependence of our proposed strategy, which is critical in experiments, is predicted by applying the experimental Gibbs free energy of H2. Our thermodynamic wetting condition analysis is a crucial step for the growth of GaN on ZnO, and we find that introducing H will not degrade the stability of ZnO substrate. This approach will allow the growth of high-quality GaN thin films on ZnO substrates. We believe that our new strategy may reduce the manufactory cost, improve the crystal quality, and improve the efficiency of GaN-based devices.

Real-time x-ray studies of crystal growth modes during metal-organic vapor phase epitaxy of GaN on c- and m-plane single crystals

DOE PAGES

Perret, Edith; Highland, M. J.; Stephenson, G. B.; ...

2014-08-04

Non-polar orientations of III-nitride semiconductors have attracted significant interest due to their potential application in optoelectronic devices with enhanced efficiency. Using in-situ surface x-ray scattering during metal-organic vapor phase epitaxy (MOVPE) of GaN on non-polar (m-plane) and polar (c-plane) orientations of single crystal substrates, we have observed the homoepitaxial growth modes as a function of temperature and growth rate. On the m-plane surface we observe all three growth modes (step-flow, layer-by-layer, and three-dimensional) as conditions are varied. In contrast, the +c-plane surface exhibits a direct cross over between step-flow and 3-D growth, with no layer-by-layer regime. The apparent activation energymore » of 2.8 ± 0.2 eV observed for the growth rate at the layer-by-layer to step-flow boundary on the m-plane surface is consistent with those observed for MOVPE growth of other III-V compounds, indicating a large critical nucleus size for islands.« less

Direct growth of freestanding GaN on C-face SiC by HVPE.

PubMed

Tian, Yuan; Shao, Yongliang; Wu, Yongzhong; Hao, Xiaopeng; Zhang, Lei; Dai, Yuanbin; Huo, Qin

2015-06-02

In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth. Hot phosphoric acid etching (at 240 °C for 30 min) was employed to identify the polarity of the GaN layer. According to the etching results, the obtained layer was Ga-polar GaN. High-resolution X-ray diffraction (HRXRD) and electron backscatter diffraction (EBSD) were done to characterize the quality of the freestanding GaN. The Raman measurements showed that the freestanding GaN film grown on the C-face 6H-SiC was stress-free. The optical properties of the freestanding GaN layer were determined by photoluminescence (PL) spectra.

Beyond conventional c-plane GaN-based light emitting diodes: A systematic exploration of LEDs on semi-polar orientations

NASA Astrophysics Data System (ADS)

Monavarian, Morteza

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the "Green Gap", is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the "quantum confined Stark effect") and low indium incorporation efficiency that are the two main factors that contribute to the Green Gap phenomenon. One possible approach that holds promise for a new generation of green and yellow light emitting devices with higher efficiency is the deployment of nonpolar and semi-polar crystallographic orientations of GaN to eliminate or mitigate polarization fields. In theory, the use of other GaN planes for light emitters could also enhance the efficiency of indium incorporation compared to c-plane. In this thesis, I present a systematic exploration of the suitable GaN orientation for future lighting technologies. First, in order to lay the groundwork for further studies, it is important to discuss the analysis of processes limiting LED efficiency and some novel designs of active regions to overcome these limitations. Afterwards, the choice of nonpolar orientations as an alternative is discussed. For nonpolar orientation, the (1100)-oriented (mo-plane) structures on patterned Si (112) and freestanding m-GaN are studied. The semi-polar orientations having substantially reduced polarization field are found to be more promising for light-emitting diodes (LEDs) owing to high indium incorporation efficiency predicted by theoretical studies. Thus, the semi-polar orientations are given close attention as alternatives for future LED technology. (Abstract shortened by ProQuest.).

Lattice distortions in GaN on sapphire using the CBED-HOLZ technique.

PubMed

Sridhara Rao, D V; McLaughlin, K; Kappers, M J; Humphreys, C J

2009-09-01

The convergent beam electron diffraction (CBED) methodology was developed to investigate the lattice distortions in wurtzite gallium nitride (GaN) from a single zone-axis pattern. The methodology enabled quantitative measurements of lattice distortions (alpha, beta, gamma and c) in transmission electron microscope (TEM) specimens of a GaN film grown on (0,0,0,1) sapphire by metal-organic vapour-phase epitaxy. The CBED patterns were obtained at different distances from the GaN/sapphire interface. The results show that GaN is triclinic above the interface with an increased lattice parameter c. At 0.85 microm from the interface, alpha=90 degrees , beta=8905 degrees and gamma=11966 degrees . The GaN lattice relaxes steadily back to hexagonal further away from the sapphire substrate. The GaN distortions are mainly confined to the initial stages of growth involving the growth and the coalescence of 3D GaN islands.

Anisotropy of atomic bonds formed by p-type dopants in bulk GaN crystals

NASA Astrophysics Data System (ADS)

Lawniczak-Jablonska, K.; Suski, T.; Gorczyca, I.; Christensen, N. E.; Libera, J.; Kachniarz, J.; Lagarde, P.; Cortes, R.; Grzegory, I.

The anisotropy of atomic bonds formed by acceptor dopants with nitrogen in bulk wurtzite GaN crystals was studied by means of linearly polarized synchrotron radiation used in measurements of X-ray-absorption spectra for the K-edgeof Mg and Zn dopants. These spectra correspond to i) a single acceptor N bond along the c-axis and ii) three bonds realized with N atoms occupying the ab-plane perpendicular to the c-axis. The Zn dopant formed resonant spectra similar to that characteristic for Ga cations. In the case of the Mg dopant, similarity to Ga cations was observed for triple bonds in the ab-plane, only. Practically no resonant structure for spectra detected along the c-axis was observed. The absorption spectra were compared with ab initio calculations using the full-potential linear muffin-tin-orbital method. These calculations were also used for determination of the bond length for Mg-N and Zn-N in wurtzite GaN crystals and show that introducing dopants causes an increase of the lengths of the bonds formed by both dopants. Extended X-ray-absorption fine-structure measurements performed for bulk GaN:Zn confirmed the prediction of the theory in the case of the Zn-N bond. Finally, it is suggested that the anisotropy in the length of the Mg-N bonds, related to their larger strength in the case of bonds in the ab-plane, can explain preferential formation of a superlattice consisting of Mg-rich layers arranged in ab-planes of several bulk GaN:Mg crystals observed by transmission electron microscopy. Within the sensitivity of the method used, no parasitic metallic clusters or oxide compounds formed by the considered acceptors in GaN crystals were found.

Incorporation of Mg in Free-Standing HVPE GaN Substrates

NASA Astrophysics Data System (ADS)

Zvanut, M. E.; Dashdorj, J.; Freitas, J. A.; Glaser, E. R.; Willoughby, W. R.; Leach, J. H.; Udwary, K.

2016-06-01

Mg, the only effective p-type dopant for nitrides, is well studied in thin films due to the important role of the impurity in light-emitting diodes and high-power electronics. However, there are few reports of Mg in thick free-standing GaN substrates. Here, we demonstrate successful incorporation of Mg into GaN grown by hydride vapor-phase epitaxy (HVPE) using metallic Mg as the doping source. The concentration of Mg obtained from four separate growth runs ranged between 1016 cm-3 and 1019 cm-3. Raman spectroscopy and x-ray diffraction revealed that Mg did not induce stress or perturb the crystalline quality of the HVPE GaN substrates. Photoluminescence (PL) and electron paramagnetic resonance (EPR) spectroscopies were performed to investigate the types of point defects in the crystals. The near-band-edge excitonic and shallow donor-shallow acceptor radiative recombination processes involving shallow Mg acceptors were prominent in the PL spectrum of a sample doped to 3 × 1018 cm-3, while the EPR signal was also thought to represent a shallow Mg acceptor. Detection of this signal reflects minimization of nonuniform strain obtained in the thick free-standing HVPE GaN compared with heteroepitaxial thin films.

Dislocation-induced nanoparticle decoration on a GaN nanowire.

PubMed

Yang, Bing; Yuan, Fang; Liu, Qingyun; Huang, Nan; Qiu, Jianhang; Staedler, Thorsten; Liu, Baodan; Jiang, Xin

2015-02-04

GaN nanowires with homoepitaxial decorated GaN nanoparticles on their surface along the radial direction have been synthesized by means of a chemical vapor deposition method. The growth of GaN nanowires is catalyzed by Au particles via the vapor-liquid-solid (VLS) mechanism. Screw dislocations are generated along the radial direction of the nanowires under slight Zn doping. In contrast to the metal-catalyst-assisted VLS growth, GaN nanoparticles are found to prefer to nucleate and grow at these dislocation sites. High-resolution transmission electron microscopy (HRTEM) analysis demonstrates that the GaN nanoparticles possess two types of epitaxial orientation with respect to the corresponding GaN nanowire: (I) [1̅21̅0]np//[1̅21̅0]nw, (0001)np//(0001)nw; (II) [1̅21̅3]np//[12̅10]nw, (101̅0)np//(101̅0)nw. An increased Ga signal in the energy-dispersive spectroscopy (EDS) profile lines of the nanowires suggests GaN nanoparticle growth at the edge surface of the wires. All the crystallographic results confirm the importance of the dislocations with respect to the homoepitaxial growth of the GaN nanoparticles. Here, screw dislocations situated on the (0001) plane provide the self-step source to enable nucleation of the GaN nanoparticles.

Nanoscale morphology and optical property evolution of Pt nanostructures on GaN (0 0 0 1) by the systematic control of annealing temperature and duration with various Pt thickness

NASA Astrophysics Data System (ADS)

Kunwar, Sundar; Pandey, Puran; Sui, Mao; Zhang, Quanzhen; Li, Ming-Yu; Lee, Jihoon

2017-06-01

By the controlled fabrication of Pt nanostructures, various surface morphology dependent electronic, catalytic and optical properties can be exploited for a wide range of applications. In this paper, the evolution of Pt nanostructures on GaN (0 0 0 1) by the solid-state dewetting of Pt thin films is investigated. Controlling the annealing temperature, time and film thickness allows us to fabricate distinct size, density and configurations of Pt nanostructures. For 10 nm Pt thickness, tiny voids and Pt hillocks up to 550 °C, extensive void expansion and Pt nanostructure evolution between 600 °C-750 °C and finally Pt nanostructures assisted nanoholes penetration on GaN surface above 800 °C are demonstrated. Furthermore, comparatively elongated Pt nanostructures and NHs are resulted with 20 nm Pt thickness and voids growth and connected Pt nanostructure are formed by annealing duration control. The transformation of Pt films to nanostructures is governed by the surface diffusion, Rayleigh instability, Volmer-Weber growth and energy minimization mechanism whereas NHs penetration is commenced by the decomposition of GaN, Pt-Ga alloying and nitrogen desorption at high temperature. In addition, the optical characteristic of Pt nanostructures on GaN (0 0 0 1) by reflectance, photoluminescence (PL) and Raman spectroscopy demonstrate the surface morphology dependent spectral response.

Boron doped GaN and InN: Potential candidates for spintronics

NASA Astrophysics Data System (ADS)

Fan, S. W.; Huang, X. N.; Yao, K. L.

2017-02-01

The full potential linearized augmented plane wave method together with the Tran-Blaha modified Becke-Johnson potential is utilized to investigate the electronic structures and magnetism for boron doped GaN and InN. Calculations show the boron substituting nitrogen (BN defects) could induce the GaN and InN to be half-metallic ferromagnets. The magnetic moments mainly come from the BN defects, and each BN defect would produce the 2.00 μB total magnetic moment. The electronic structures indicate the carriers-mediated double exchange interaction plays a crucial role in forming the ferromagnetism. Positive chemical pair interactions imply the BN defects would form the homogeneous distribution in GaN and InN matrix. Moderate formation energies suggest that GaN and InN with BN defects could be fabricated experimentally.

Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

NASA Astrophysics Data System (ADS)

Al Balushi, Zakaria Y.

Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth of N-polar InGaN by MOCVD is challenging. These challenges arise from the lack of available native substrates suitable for N-polar film growth. As a result, InGaN layers are conventionally grown in the III-polar direction (i.e. III-polar InGaN) and typically grow under considerable amounts of stress on III-polar GaN base layers. While the structure-property relations of thin III-polar InGaN layers have been widely studied in quantum well structures, insight into the growth of thick films and N-polar InGaN layers have been limited. Therefore, this dissertation research compared the growth of both thick III-polar and N-polar InGaN films grown on optimized GaN base layers. III-polar InGaN films were rough and exhibited a high density of V-pits, while the growth of thick N-polar InGaN films showed improved structural quality and low surface roughness. The results of this dissertation work thereby provide an alternative route to the fabrication of thick InGaN films for potential use in solar cells as well as strain reducing schemes for deep-green and red light emitters. Moreover, this dissertation investigated stress relaxation in thick N-polar films using in situ reflectivity and curvature measurements. The results showed that stress relaxation in N-polar InGaN significantly differed from III-polar InGaN due to the absence of V-pits and it was hypothesized that plastic relaxation in N-polar InGaN could occur by dislocation glide, which typically is kinetically limited at such low growth temperatures required for InGaN. The second part of this dissertation research work focused on buffer free growth of GaN directly on SiC and on epitaxial graphene produced on SiC for potential vertical devices. The studies presented in this dissertation work on the growth of GaN directly on SiC compared the stress evolution of GaN films grown with and without an AlN buffer layer. Films grown directly on SiC showed reduced threading dislocation densities and improved surface roughness when compared to the growth of GaN on an AlN buffer layer. The dislocations in the GaN films grown di

Determination of carrier diffusion length in p- and n-type GaN

NASA Astrophysics Data System (ADS)

Hafiz, Shopan; Metzner, Sebastian; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Karbaum, Christopher; Bertram, Frank; Christen, Jürgen; Gil, Bernard; Özgür, Ümit

2014-03-01

Diffusion lengths of photo-excited carriers along the c-direction were determined from photoluminescence (PL) measurements in p- and n-type GaN epitaxial layers grown on c-plane sapphire by metal-organic chemical vapor deposition. The investigated samples incorporate a 6 nm thick In0.15Ga0.85N active layer capped with either 500 nm p- GaN or 1300 nm n-GaN. The top GaN layers were etched in steps and PL from the InGaN active region and the underlying layers was monitored as a function of the top GaN thickness upon photogeneration near the surface region by above bandgap excitation. Taking into consideration the absorption in the active and underlying layers, the diffusion lengths at 295 K and at 15 K were measured to be about 92 ± 7 nm and 68 ± 7 nm for Mg-doped p-type GaN and 432 ± 30 nm and 316 ± 30 nm for unintentionally doped n-type GaN, respectively. Cross-sectional cathodoluminescence line-scan measurement was performed on a separate sample and the diffusion length in n-type GaN was measured to be 280 nm.

P-type surface effects for thickness variation of 2um and 4um of n-type layer in GaN LED

NASA Astrophysics Data System (ADS)

Halim, N. S. A. Abdul; Wahid, M. H. A.; Hambali, N. A. M. Ahmad; Rashid, S.; Ramli, M. M.; Shahimin, M. M.

2017-09-01

The internal quantum efficiency of III-Nitrides group, GaN light-emitting diode (LED) has been considerably limited due to the insufficient hole injection and this is caused by the lack of performance p-type doping and low hole mobility. The low hole mobility makes the hole less energetic, thus reduced the performance operation of GaN LED itself. The internal quantum efficiency of GaN-based LED with surface roughness (texture) can be changed by texture size, density, and thickness of GaN film or by the combined effects of surface shape and thickness of GaN film. Besides, due to lack of p-type GaN, attempts to look forward the potential of GaN LED relied on the thickness of n-type layer and surface shape of p-type GaN layer. This work investigates the characteristics of GaN LED with undoped n-GaN layer of different thickness and the surface shape of p-type layer. The LEDs performance is significantly altered by modifying the thickness and shape. Enhancement of n-GaN layer has led to the annihilation of electrical conductivity of the chip. Different surface geometry governs the emission rate extensively. Internal quantum efficiency is also predominantly affected by the geometry of n-GaN layer which subjected to the current spreading. It is recorded that the IQE droop can be minimized by varying the thickness of the active layer without amplifying the forward voltage. Optimum forward voltage (I-V), total emission rate relationship with the injected current and internal quantum efficiency (IQE) for 2,4 µm on four different surfaces of p-type layer are also reported in this paper.

Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sintonen, Sakari, E-mail: sakari.sintonen@aalto.fi; Suihkonen, Sami; Jussila, Henri

2014-08-28

The crystal quality of bulk GaN crystals is continuously improving due to advances in GaN growth techniques. Defect characterization of the GaN substrates by conventional methods is impeded by the very low dislocation density and a large scale defect analysis method is needed. White beam synchrotron radiation x-ray topography (SR-XRT) is a rapid and non-destructive technique for dislocation analysis on a large scale. In this study, the defect structure of an ammonothermal c-plane GaN substrate was recorded using SR-XRT and the image contrast caused by the dislocation induced microstrain was simulated. The simulations and experimental observations agree excellently and themore » SR-XRT image contrasts of mixed and screw dislocations were determined. Apart from a few exceptions, defect selective etching measurements were shown to correspond one to one with the SR-XRT results.« less

The function of an In0.17Al0.83N interlayer in n-ZnO/In0.17Al0.83N/p-GaN heterojunctions

NASA Astrophysics Data System (ADS)

Wang, Xiao; Gan, Xuewei; Zhang, Guozhen; Su, Xi; Zheng, Meijuan; Ai, Zhiwei; Wu, Hao; Liu, Chang

2017-01-01

ZnO thin films were deposited on p-type GaN with a thin In0.17Al0.83N interlayer, forming double heterostructural diodes of n-ZnO/In0.17Al0.83N/p-GaN. The crystalline quality of the ZnO films was improved and its orientation was kept along < 70 7 bar 4 > that was perpendicular to (10 1 bar 1) plane. The reverse leakage current was reduced by introducing the In0.17Al0.83N interlayer. The electroluminescence spectra of the n-ZnO/In0.17Al0.83N/p-GaN heterojunctions were dominated by p-GaN emissions under forward biases and n-ZnO emissions under reverse biases. The valence-band offset and conduction-band offset between the ZnO and In0.17Al0.83N were determined to be -0.72 and 1.95 eV, respectively.

Characterization of remote O2-plasma-enhanced CVD SiO2/GaN(0001) structure using photoemission measurements

NASA Astrophysics Data System (ADS)

Truyen, Nguyen Xuan; Ohta, Akio; Makihara, Katsunori; Ikeda, Mitsuhisa; Miyazaki, Seiichi

2018-01-01

The control of chemical composition and bonding features at a SiO2/GaN interface is a key to realizing high-performance GaN power devices. In this study, an ∼5.2-nm-thick SiO2 film has been deposited on an epitaxial GaN(0001) surface by remote O2-plasma-enhanced chemical vapor deposition (O2-RPCVD) using SiH4 and Ar/O2 mixture gases at a substrate temperature of 500 °C. The depth profile of chemical structures and electronic defects of the O2-RPCVD SiO2/GaN structures has been evaluated from a combination of SiO2 thinning examined by X-ray photoelectron spectroscopy (XPS) and the total photoelectron yield spectroscopy (PYS) measurements. As a highlight, we found that O2-RPCVD is effective for fabricating an abrupt SiO2/GaN interface.

Controlled growth of ordered nanopore arrays in GaN.

PubMed

Wildeson, Isaac H; Ewoldt, David A; Colby, Robert; Stach, Eric A; Sands, Timothy D

2011-02-09

High-quality, ordered nanopores in semiconductors are attractive for numerous biological, electrical, and optical applications. Here, GaN nanorods with continuous pores running axially through their centers were grown by organometallic vapor phase epitaxy. The porous nanorods nucleate on an underlying (0001)-oriented GaN film through openings in a SiN(x) template that are milled by a focused ion beam, allowing direct placement of porous nanorods. Nanopores with diameters ranging from 20-155 nm were synthesized with crystalline sidewalls.

The controlled growth of GaN microrods on Si(111) substrates by MOCVD

NASA Astrophysics Data System (ADS)

Foltynski, Bartosz; Garro, Nuria; Vallo, Martin; Finken, Matthias; Giesen, Christoph; Kalisch, Holger; Vescan, Andrei; Cantarero, Andrés; Heuken, Michael

2015-03-01

In this paper, a selective area growth (SAG) approach for growing GaN microrods on patterned SiNx/Si(111) substrates by metal-organic chemical vapor deposition (MOCVD) is studied. The surface morphology, optical and structural properties of vertical GaN microrods terminated by pyramidal shaped facets (six { 10 1 bar 1} planes) were characterized using scanning electron microscopy (SEM), room temperature photoluminescence (PL) and Raman spectroscopy, respectively. Measurements revealed high-quality GaN microcolumns grown with silane support. Characterized structures were grown nearly strain-free (central frequency of Raman peak of 567±1 cm-1) with crystal quality comparable to bulk crystals (FWHM=4.2±1 cm-1). Such GaN microrods might be used as a next-generation device concept for solid-state lighting (SSL) applications by realizing core-shell InGaN/GaN multi-quantum wells (MQWs) on the n-GaN rod base.

Macrodefect-free, large, and thick GaN bulk crystals for high-quality 2–6 in. GaN substrates by hydride vapor phase epitaxy with hardness control

NASA Astrophysics Data System (ADS)

Fujikura, Hajime; Konno, Taichiro; Suzuki, Takayuki; Kitamura, Toshio; Fujimoto, Tetsuji; Yoshida, Takehiro

2018-06-01

On the basis of a novel crystal hardness control, we successfully realized macrodefect-free, large (2–6 in.) and thick +c-oriented GaN bulk crystals by hydride vapor phase epitaxy. Without the hardness control, the introduction of macrodefects including inversion domains and/or basal-plane dislocations seemed to be indispensable to avoid crystal fracture in GaN growth with millimeter thickness. However, the presence of these macrodefects tended to limit the applicability of the GaN substrate to practical devices. The present technology markedly increased the GaN crystal hardness from below 20 to 22 GPa, thus increasing the available growth thickness from below 1 mm to over 6 mm even without macrodefect introduction. The 2 and 4 in. GaN wafers fabricated from these crystals had extremely low dislocation densities in the low- to mid-105 cm‑2 range and low off-angle variations (2 in.: <0.1° 4 in.: ∼0.2°). The realization of such high-quality 6 in. wafers is also expected.

Advanced Technologies for Heterodyne Radio Astronomy Instrumentation - Part1 By A. Pavolotsky, and Advanced Technologies for Heterodyne Radio Astronomy Instrumentation - Part2 By V. Desmaris

NASA Astrophysics Data System (ADS)

Desmaris, Vincent

2018-01-01

We present the advanced micro/nano technological engineering at the atomic level producing state-of-the-art epitaxial NbN thin-films on GaN buffer layers. Furthermore, we report the outstanding performance of the hot electron bolometers fabricated on epitaxial NbN thin films on GaN buffer layers. Finally we present advanced passive devices such as waveguide hybrids, IF hybrids and combiners for the realization of heterodyne THz receivers.

Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma - effect of TMG flow rate and VHF power

NASA Astrophysics Data System (ADS)

Lu, Yi; Kondo, Hiroki; Ishikawa, Kenji; Oda, Osamu; Takeda, Keigo; Sekine, Makoto; Amano, Hiroshi; Hori, Masaru

2014-04-01

Gallium nitride (GaN) films have been grown by using our newly developed Radical-Enhanced Metalorganic Chemical Vapor Deposition (REMOCVD) system. This system has three features: (1) application of very high frequency (60 MHz) power in order to increase the plasma density, (2) introduction of H2 gas together with N2 gas in the plasma discharge region to generate not only nitrogen radicals but also active NHx molecules, and (3) radical supply under remote plasma arrangement with suppression of charged ions and photons by employing a Faraday cage. Using this new system, we have studied the effect of the trimethylgallium (TMG) source flow rate and of the plasma generation power on the GaN crystal quality by using scanning electron microscopy (SEM) and double crystal X-ray diffraction (XRD). We found that this REMOCVD allowed the growth of epitaxial GaN films of the wurtzite structure of (0001) orientation on sapphire substrates with a high growth rate of 0.42 μm/h at a low temperature of 800 °C. The present REMOCVD is a promising method for GaN growth at relatively low temperature and without using costly ammonia gas.

Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods

PubMed

Kuwan; Tsukamoto; Taki; Horibuchi; Oki; Kawaguchi; Shibata; Sawaki; Hiramatsu

2000-01-01

Cross-sectional transmission electron microscope (TEM) observation was performed for selectively grown gallium nitride (GaN) in order to examine the dependence of GaN microstructure on the growth conditions. The GaN films were grown by hydride vapour phase epitaxy (HVPE) or metalorganic vapour phase epitaxy (MOVPE) on GaN covered with a patterned mask. Thin foil specimens for TEM observation were prepared with focused ion beam (FIB) machining apparatus. It was demonstrated that the c-axis of GaN grown over the terrace of the mask tilts towards the centre of the terrace when the GaN is grown in a carrier gas of N2. The wider terrace results in a larger tilting angle if other growth conditions are identical. The tilting is attributed to 'horizontal dislocations' (HDs) generated during the overgrowth of GaN on the mask terrace. The HDs in HVPE-GaN have a semi-loop shape and are tangled with one another, while those in MOVPE-GaN are straight and lined up to form low-angle grain boundaries.

Wedge-Shaped GaN Nanowalls: A Potential Candidate for Two-Dimensional Electronics and Spintronics

NASA Astrophysics Data System (ADS)

Deb, Swarup; Dhar, Subhabrata

Schrödingerand Poisson equations are solved self-consistently in order to obtain the potential and charge density distribution in n-type GaN nanowalls tapered along c-axis by different angles. The study shows two-dimensional (2D) quantum confinement of electrons in the central vertical plane of the wall for the entire range of tapering. Calculation of room temperature electron mobility in the 2D channel shows a steady decrease with the increase of the inclination angle of the side facets with respect to the base. However, it is interesting to note that the mobility remains to be much larger than that of bulk GaN even for the inclination angle of 65∘. The properties of high mobility and the vertical orientation of the 2DEG plane in this system can be exploited in fabricating highly conducting transparent interconnects and field effect transistors, which can lead to large scale integration of 2D devices in future.

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN.

PubMed

Hu, Xiao-Long; Wang, Hong; Zhang, Xi-Chun

2015-01-01

We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N2 ambient for 20 min to increase its transparency as well as to activate the p-type GaN. The electrical measurements showed that the LEDs were featured by a lower forward voltage and higher wall-plug efficiency in comparison with LEDs using pre-activation of p-type GaN. We discussed the mechanism of activation of p-type GaN at 500°C in N2 ambient. Furthermore, x-ray photoemission spectroscopy examinations were carried out to study the improved electrical performances of the LEDs without pre-activation of p-type GaN.

Undoped p-type GaN1-xSbx alloys: Effects of annealing

NASA Astrophysics Data System (ADS)

Segercrantz, N.; Baumgartner, Y.; Ting, M.; Yu, K. M.; Mao, S. S.; Sarney, W. L.; Svensson, S. P.; Walukiewicz, W.

2016-12-01

We report p-type behavior for undoped GaN1-xSbx alloys with x ≥ 0.06 grown by molecular beam epitaxy at low temperatures (≤400 °C). Rapid thermal annealing of the GaN1-xSbx films at temperatures >400 °C is shown to generate hole concentrations greater than 1019 cm-3, an order of magnitude higher than typical p-type GaN achieved by Mg doping. The p-type conductivity is attributed to a large upward shift of the valence band edge resulting from the band anticrossing interaction between localized Sb levels and extended states of the host matrix.

Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Fengzai; Barnard, Jonathan S.; Zhu, Tongtong

A non-polar m-plane structure consisting of five InGaN/GaN quantum wells (QWs) was grown on ammonothermal bulk GaN by metal-organic vapor phase epitaxy. Surface step bunches propagating through the QW stack were found to accommodate the 2° substrate miscut towards the -c direction. Both large steps with heights of a few tens of nanometres and small steps between one and a few atomic layers in height are observed, the former of which exhibit cathodoluminescence at longer wavelengths than the adjacent m-plane terraces. This is attributed to the formation of semi-polar facets at the steps on which the QWs are shown tomore » be thicker and have higher Indium contents than those in the adjacent m-plane regions. Discrete basal-plane stacking faults (BSFs) were occasionally initiated from the QWs on the main m-plane terraces, but groups of BSFs were frequently observed to initiate from those on the large steps, probably related to the increased strain associated with the locally higher indium content and thickness.« less

Homogeneous AlGaN/GaN superlattices grown on free-standing (1100) GaN substrates by plasma-assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shao, Jiayi; Malis, Oana; Physics Department, Purdue University, West Lafayette, Indiana 47907

Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1100) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults (SFs) bounded by eithermore » Frank-Shockley or Frank partial dislocations. In particular, the linear density of SFs is approximately 5 × 10{sup −5} cm{sup −1}, and the length of SFs is less than 15 nm.« less

Quantitative secondary ion mass spectrometric analysis of secondary ion polarity in GaN films implanted with oxygen

NASA Astrophysics Data System (ADS)

Hashiguchi, Minako; Sakaguchi, Isao; Adachi, Yutaka; Ohashi, Naoki

2016-10-01

Quantitative analyses of N and O ions in GaN thin films implanted with oxygen ions (16O+) were conducted by secondary ion mass spectrometry (SIMS). Positive (CsM+) and negative secondary ions extracted by Cs+ primary ion bombardment were analyzed for oxygen quantitative analysis. The oxygen depth profiles were obtained using two types of primary ion beams: a Gaussian-type beam and a broad spot beam. The oxygen peak concentrations in GaN samples were from 3.2 × 1019 to 7.0 × 1021 atoms/cm3. The depth profiles show equivalent depth resolutions in the two analyses. The intensity of negative oxygen ions was approximately two orders of magnitude higher than that of positive ions. In contrast, the O/N intensity ratio measured using CsM+ molecular ions was close to the calculated atomic density ratio, indicating that the SIMS depth profiling using CsM+ ions is much more effective for the measurements of O and N ions in heavy O-implanted GaN than that using negative ions.

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors.

PubMed

Hardy, Matthew T; Storm, David F; Katzer, D Scott; Downey, Brian P; Nepal, Neeraj; Meyer, David J

2016-11-24

Plasma-assisted molecular beam epitaxy is well suited for the epitaxial growth of III-nitride thin films and heterostructures with smooth, abrupt interfaces required for high-quality high-electron-mobility transistors (HEMTs). A procedure is presented for the growth of N-polar InAlN HEMTs, including wafer preparation and growth of buffer layers, the InAlN barrier layer, AlN and GaN interlayers and the GaN channel. Critical issues at each step of the process are identified, such as avoiding Ga accumulation in the GaN buffer, the role of temperature on InAlN compositional homogeneity, and the use of Ga flux during the AlN interlayer and the interrupt prior to GaN channel growth. Compositionally homogeneous N-polar InAlN thin films are demonstrated with surface root-mean-squared roughness as low as 0.19 nm and InAlN-based HEMT structures are reported having mobility as high as 1,750 cm 2 /V∙sec for devices with a sheet charge density of 1.7 x 10 13 cm -2 .

Study of Electrical Contacts and Devices in Advanced Semiconductors

NASA Technical Reports Server (NTRS)

Hall, H. P.; Das, K.; Alterovitz, Samuel (Technical Monitor)

2001-01-01

Research conducted at Tuskegee University concentrates on electrical contacts to GaN films and their characterization with the objective of understanding contact formation and realizing low-resistance metal contacts. Contact properties are known to be strongly related to surface preparation. It appears that the as-received material had a thin oxide film on the surface of the GaN film. Various cleaning treatments were employed in order to render the surface contamination free and removal of the oxide film. Metal films were then deposited by e-beam evaporation. Electrical characteristics of these contacts indicated that the optimal treatment was an organic solvent cleaning followed by etching in buffered oxide solution. Contacts established with Al were observed to be ohmic in nature, whereas Au, Cr, Ti, and Pt exhibit rectifying contacts. Platinum contacts were almost ideal as shown by an ideality factor of 1.02.

Light Modulation and Water Splitting Enhancement Using a Composite Porous GaN Structure.

PubMed

Yang, Chao; Xi, Xin; Yu, Zhiguo; Cao, Haicheng; Li, Jing; Lin, Shan; Ma, Zhanhong; Zhao, Lixia

2018-02-14

On the basis of the laterally porous GaN, we designed and fabricated a composite porous GaN structure with both well-ordered lateral and vertical holes. Compared to the plane GaN, the composite porous GaN structure with the combination of the vertical holes can help to reduce UV reflectance and increase the saturation photocurrent during water splitting by a factor of ∼4.5. Furthermore, we investigated the underlying mechanism for the enhancement of the water splitting performance using a finite-difference time-domain method. The results show that the well-ordered vertical holes can not only help to open the embedded pore channels to the electrolyte at both sides and reduce the migration distance of the gas bubbles during the water splitting reactions but also help to modulate the light field. Using this composite porous GaN structure, most of the incident light can be modulated and trapped into the nanoholes, and thus the electric fields localized in the lateral pores can increase dramatically as a result of the strong optical coupling. Our findings pave a new way to develop GaN photoelectrodes for highly efficient solar water splitting.

Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD

NASA Astrophysics Data System (ADS)

Särkijärvi, Suvi; Sintonen, Sakari; Tuomisto, Filip; Bosund, Markus; Suihkonen, Sami; Lipsanen, Harri

2014-07-01

We report on the epitaxial growth of ZnO on GaN template by atomic layer deposition (ALD). Diethylzinc (DEZn) and water vapour (H2O) were used as precursors. The structure and the quality of the grown ZnO layers were studied with scanning electron microscope (SEM), X-ray diffraction (XRD), photoluminescence (PL) measurements and positron annihilation spectroscopy. The ZnO films were confirmed epitaxial, and the film quality was found to improve with increasing deposition temperature in the vicinity of the threshold temperature of two dimensional growth. We conclude that high quality ZnO thin films can be grown by ALD. Interestingly only separate Zn-vacancies were observed in the films, although ZnO thin films typically contain fairly high density of surface pits and vacancy clusters.

Electrical transport and structural characterization of epitaxial monolayer MoS2 /n- and p-doped GaN vertical lattice-matched heterojunctions

NASA Astrophysics Data System (ADS)

Ruzmetov, D.; O'Regan, T.; Zhang, K.; Herzing, A.; Mazzoni, A.; Chin, M.; Huang, S.; Zhang, Z.; Burke, R.; Neupane, M.; Birdwell, Ag; Shah, P.; Crowne, F.; Kolmakov, A.; Leroy, B.; Robinson, J.; Davydov, A.; Ivanov, T.

We investigate vertical semiconductor junctions consisting of monolayer MoS2 that is epitaxially grown on n- and p-doped GaN crystals. Such a junction represents a building block for 2D/3D vertical semiconductor heterostructures. Epitaxial, lattice-matched growth of MoS2 on GaN is important to ensure high quality interfaces that are crucial for the efficient vertical transport. The MoS2/GaN junctions were characterized with cross-sectional and planar scanning transmission electron microscopy (STEM), scanning tunneling microscopy, and atomic force microscopy. The MoS2/GaN lattice mismatch is measured to be near 1% using STEM. The electrical transport in the out-of-plane direction across the MoS2/GaN junctions was measured using conductive atomic force microscopy and mechanical nano-probes inside a scanning electron microscope. Nano-disc metal contacts to MoS2 were fabricated by e-beam lithography and evaporation. The current-voltage curves of the vertical MoS2/GaN junctions exhibit rectification with opposite polarities for n-doped and p-doped GaN. The metal contact determines the general features of the current-voltage curves, and the MoS2 monolayer modifies the electrical transport across the contact/GaN interface.

Strongly localized donor level in oxygen doped gallium nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wetzel, C.; Suski, T.; Ager, J.W. III

1996-08-01

A classification in terms of localization of donor defects in GaN is performed by Raman spectroscopy under large hydrostatic pressure. We observe a significant decrease of free carrier concentration in highly O doped GaN epitaxial films at 22 GPa, indicating the presence of a strongly localized donor defect at large pressure. Monitoring the phonon plasmon coupled mode, we find similarities with results on highly n-type bulk crystals. We refine the model of localized defects in GaN and transfer it to the AlGaN system.

Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

NASA Astrophysics Data System (ADS)

Chichibu, S. F.; Shima, K.; Kojima, K.; Takashima, S.; Edo, M.; Ueno, K.; Ishibashi, S.; Uedono, A.

2018-05-01

Complementary time-resolved photoluminescence and positron annihilation measurements were carried out at room temperature on Mg-doped p-type GaN homoepitaxial films for identifying the origin and estimating the electron capture-cross-section ( σ n ) of the major nonradiative recombination centers (NRCs). To eliminate any influence by threading dislocations, free-standing GaN substrates were used. In Mg-doped p-type GaN, defect complexes composed of a Ga-vacancy (VGa) and multiple N-vacancies (VNs), namely, VGa(VN)2 [or even VGa(VN)3], are identified as the major intrinsic NRCs. Different from the case of 4H-SiC, atomic structures of intrinsic NRCs in p-type and n-type GaN are different: VGaVN divacancies are the major NRCs in n-type GaN. The σ n value approximately the middle of 10-13 cm2 is obtained for VGa(VN)n, which is larger than the hole capture-cross-section (σp = 7 × 10-14 cm2) of VGaVN in n-type GaN. Combined with larger thermal velocity of an electron, minority carrier lifetime in Mg-doped GaN becomes much shorter than that of n-type GaN.

Electronic and Optical Properties of Two-Dimensional GaN from First-Principles.

PubMed

Sanders, Nocona; Bayerl, Dylan; Shi, Guangsha; Mengle, Kelsey A; Kioupakis, Emmanouil

2017-12-13

Gallium nitride (GaN) is an important commercial semiconductor for solid-state lighting applications. Atomically thin GaN, a recently synthesized two-dimensional material, is of particular interest because the extreme quantum confinement enables additional control of its light-emitting properties. We performed first-principles calculations based on density functional and many-body perturbation theory to investigate the electronic, optical, and excitonic properties of monolayer and bilayer two-dimensional (2D) GaN as a function of strain. Our results demonstrate that light emission from monolayer 2D GaN is blueshifted into the deep ultraviolet range, which is promising for sterilization and water-purification applications. Light emission from bilayer 2D GaN occurs at a similar wavelength to its bulk counterpart due to the cancellation of the effect of quantum confinement on the optical gap by the quantum-confined Stark shift. Polarized light emission at room temperature is possible via uniaxial in-plane strain, which is desirable for energy-efficient display applications. We compare the electronic and optical properties of freestanding two-dimensional GaN to atomically thin GaN wells embedded within AlN barriers in order to understand how the functional properties are influenced by the presence of barriers. Our results provide microscopic understanding of the electronic and optical characteristics of GaN at the few-layer regime.

Structures and optical properties of \\text{H}_{2}^{+} -implanted GaN epi-layers

NASA Astrophysics Data System (ADS)

Li, B. S.; Wang, Z. G.

2015-06-01

The implantation damage build-up and optical properties of GaN epitaxial films under \\text{H}2+ ion implantation have been investigated by a combination of Rutherford backscattering in channeling geometry, Raman spectroscopy, UV-visible spectroscopy and transmission electron microscopy. GaN epitaxial films were implanted with 134 keV \\text{H}2+ ions to doses ranging from 3.75   ×   1016 to 1.75   ×   1017 \\text{H}2+  cm-2 at room temperature or the same dose of 1.5   ×   1017 \\text{H}2+  cm-2 at room temperature, 573 and 723 K. The dependence of lattice disorder induced by \\text{H}2+ -implantation on the ion dose can be divided into a three-step damage process. A strong influence of the H concentration on the defect accumulation is discussed. The decrease in relative Ga disorder induced by \\text{H}2+ -implantation is linear with increasing implantation temperature. The absorption coefficient of GaN epitaxial films increases with increasing ion dose, leading to the decrease in Raman scattering spectra of Ga-N vibration. With increasing implantation doses up to 5   ×   1016 \\text{H}2+  cm-2, nanoscale hydrogen bubbles are observed in the H deposition peak region. Interstitial-type dislocation loops are observed in the damaged layer located near the damage peak region, and the geometry of the dislocation loops produced by H implantation is analyzed. The surface layer is almost free of lattice disorder induced by \\text{H}2+ -implantation.

Growth kinetics and characterizations of gallium nitride thin films by remote PECVD

NASA Technical Reports Server (NTRS)

Choi, S. W.; Bachmann, K. J.; Lucovsky, G.

1993-01-01

Thin films of GaN have been deposited at relatively low growth temperatures by remote plasma-enhanced chemical-vapor deposition (RPECVD), using a plasma excited NH3, and trimethylgallium (TMG), injected downstream from the plasma. The activation energy for GaN growth has been tentatively assigned to the dissociation of NH groups as the primary N-atom precursors in the surface reaction with adsorbed TMG, or TMG fragments. At high He flow rates, an abrupt increase in the growth rate is observed and corresponds to a change in the reaction mechanism attributed to the formation of atomic N. XRD reveals an increased tendency to ordered growth in the (0001) direction with increasing growth temperature, He flow rate, and RF plasma power. IR spectra show the fundamental lattice mode of GaN at 530 cm without evidence for vibrational modes of hydrocarbon groups.

Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Tangi, Malleswararao; De, Arpan; Shivaprasad, S. M.

2018-01-01

We report the molecular beam epitaxy growth of device quality InN films on GaN epilayer and nano-wall network (NWN) templates deposited on c-sapphire by varying the film thickness up to 1 μm. The careful experiments are directed towards obtaining high mobility InN layers having a low band gap with improved crystal quality. The dislocation density is quantified by using high resolution X-ray diffraction rocking curve broadening values of symmetric and asymmetric reflections, respectively. We observe that the dislocation density of the InN films grown on GaN NWN is less than that of the films grown on the GaN epilayer. This is attributed to the nanoepitaxial lateral overlayer growth (ELOG) process, where the presence of voids at the interface of InN/GaN NWN prevents the propagation of dislocation lines into the InN epilayers, thereby causing less defects in the overgrown InN films. Thus, this new adaptation of the nano-ELOG growth process enables us to prepare InN layers with high electron mobility. The obtained electron mobility of 2121 cm2/Vs for 1 μm thick InN/GaN NWN is comparable with the literature values of similar thickness InN films. Furthermore, in order to understand the reasons that limit electron mobility, the charge neutrality condition is employed to study the variation of electron mobility as a function of dislocation density and carrier concentration. Overall, this study provides a route to attaining improved crystal quality and electronic properties of InN films.

Selective-area nanoheteroepitaxy for light emitting diode (LED) applications

NASA Astrophysics Data System (ADS)

Wildeson, Isaac H.

Over 20% of the electricity in the United States is consumed for lighting, and the majority of this energy is wasted as heat during the lighting process. A solid-state (or light emitting diode (LED)-based) light source has the potential of saving the United States billions of dollars in electricity and reducing megatons of global CO2 emissions annually. While white light LEDs are currently on the market with efficiencies that are superior to incandescent and fluorescent light sources, their high up-front cost is inhibiting mass adoption. One reason for the high cost is the inefficiency of green and amber LEDs that can used to make white light. The inefficiency of green and amber LEDs results in more of these chips being required, and thus a higher cost. Improvements in the performance of green and amber LEDs is also required in order to realize the full potential of solid-state lighting. Nanoheteroepitaxy is an interesting route towards achieving efficient green and amber LEDs as it resolves major challenges that are currently plaguing III-nitride LEDs such as high dislocation densities and limited active region critical thicknesses. A method for fabricating III-nitride nanopyramid LEDs is presented that employs conventional processing used in industry. The present document begins with an overview of the current challenges in III-nitride LEDs and the benefits of nanoheteroepitaxy. A process for controlled selective-area growth of nanopyramid LEDs by organometallic vapor phase epitaxy has been developed throughout the course of this work. Dielectric templates used for the selective-area growth are patterned by two methods, namely porous anodic alumina and electron-beam lithography. The dielectric templates serve as efficient dislocation filters; however, planar defects are initiated during lower temperature growth on the nanopyramids. The quantum wells outline six semipolar planes that form each hexagonal pyramid. Quantum wells grown on these semipolar planes generate built-in electric fields with magnitudes that are one-tenth those on the polar c-plane with the same (In,Ga)N composition. The lateral strain relaxation innate in the nanoheterostructures allows greater coherent InN incorporation in the nanopyramids as compared to thin-film heterostructures, as confirmed by electroluminescence and transmission electron microscopy. In addition to applications for light emitting diodes, selective area growth of GaN nanostructures is also important for biological and sensing applications. A process for fabricating porous GaN nanorods is presented that also relies on selective-area organometallic vapor phase epitaxy. The nanopore walls are primarily outlined by nonpolar planes, and the diameter of the nanopore can be controlled by the diameter of the opening in the dielectric template and the growth time. The lining of the nanopore walls is comprised of crystalline GaN, which makes these structures interesting for sensing, electrical and optical applications.

A comparative study on magnetism in Zn-doped AlN and GaN from first-principles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Liang; Wang, Lingling, E-mail: llwang@hnu.edu.cn, E-mail: xiaowenzhi@hnu.edu.cn; Huang, Weiqing

2014-09-14

First-principles calculations have been used to comparatively investigate electronic and magnetic properties of Zn-doped AlN and GaN. A total magnetic moment of 1.0 μ B{sub B} induced by Zn is found in AlN, but not in GaN. Analyses show that the origin of spontaneous polarization not only depend on the localized atomic orbitals of N and sufficient hole concentration, but also the relative intensity of the covalency of matrix. The relatively stronger covalent character of GaN with respect to AlN impedes forming local magnetic moment in GaN matrix. Our study offers a fresh sight of spontaneous spin polarization in d⁰more » magnetism. The much stronger ferromagnetic coupling in c-plane of AlN means that it is feasible to realize long-range ferromagnetic order via monolayer delta-doping. This can apply to other wide band-gap semiconductors in wurtzite structure.« less

Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN

NASA Astrophysics Data System (ADS)

Lund, Cory; Catalano, Massimo; Wang, Luhua; Wurm, Christian; Mates, Thomas; Kim, Moon; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

2018-02-01

N-polar InN layers were deposited using MOCVD on GaN-on-sapphire templates which were miscut 4° towards the GaN m-direction. For thin layers, quantum dot-like features were spontaneously formed to relieve the strain between the InN and GaN layers. As the thickness was increased, the dots elongated along the step direction before growing outward perpendicular to the step direction and coalescing to form a complete InN layer. XRD reciprocal space maps indicated that the InN films relaxed upon quantum dot formation after nominally 1 nm thick growth, resulting in 5-7 nm tall dots with diameters around 20-50 nm. For thicker layers above 10 nm, high electron mobilities of up to 706 cm2/V s were measured using Hall effect measurements indicating high quality layers.

Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD

NASA Astrophysics Data System (ADS)

Omar, Al-Zuhairi; Shuhaimi Bin Abu Bakar, Ahmad; Makinudin, Abdullah Haaziq Ahmad; Khudus, Muhammad Imran Mustafa Abdul; Azman, Adreen; Kamarundzaman, Anas; Supangat, Azzuliani

2018-05-01

The effect of ammonia flux towards the quality of the semi-polar (11-22) gallium nitride thin film on m-plane (10-10) sapphire is presented. Semi-polar (11-22) gallium nitride epi-layers were obtained using a two-step growth method, consisting of high temperature aluminum nitride followed by gallium nitride via metal organic chemical vapor deposition. The surface morphology analysis via field emission scanning electron microscopy and atomic force microscopy of the semi-polar (11-22) gallium nitride has shown that low ammonia flux promotes two-dimensional growth with low surface roughness of 4.08 nm. A dominant diffraction peak of (11-22) gallium nitride was also observed via X-ray diffraction upon utilizing low ammonia flux. The on- and off-axis X-ray rocking curve measurements illustrate the enhancement of the crystal quality, which might result from the reduction of the basal stacking faults and perfect dislocation. The full width half maximum values were reduced by at least 15% for both on- and off-axis measurements.

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

NASA Astrophysics Data System (ADS)

Puybaret, Renaud; Patriarche, Gilles; Jordan, Matthew B.; Sundaram, Suresh; El Gmili, Youssef; Salvestrini, Jean-Paul; Voss, Paul L.; de Heer, Walt A.; Berger, Claire; Ougazzaden, Abdallah

2016-03-01

We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5-8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

DOE Office of Scientific and Technical Information (OSTI.GOV)

Puybaret, Renaud; Jordan, Matthew B.; Voss, Paul L.

We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5–8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metalmore » organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.« less

RBS/Channeling Studies of Swift Heavy Ion Irradiated GaN Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sathish, N.; Dhamodaran, S.; Pathak, A. P.

2009-03-10

Epitaxial GaN layers grown by MOCVD on c-plane sapphire substrates were irradiated with 150 MeV Ag ions at a fluence of 5x10{sup 12} ions/cm{sup 2}. Samples used in this study are 2 {mu}m thick GaN layers, with and without a thin AlN cap-layer. Energy dependent RBS/Channeling measurements have been carried out on both irradiated and unirradiated samples for defects characterization. Observed results are compared and correlated with previous HRXRD, AFM and optical studies. The {chi}{sub min} values for unirradiated samples show very high value and the calculated defect densities are of the order of 10{sup 10} cm{sup -2} as expectedmore » in these samples. Effects of irradiation on these samples are different as initial samples had different defect densities. Epitaxial reconstruction of GaN buffer layer has been attributed to the observed changes, which are generally grown to reduce the strain between GaN and Sapphire.« less

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite

NASA Astrophysics Data System (ADS)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe; Jiang, Haiwei

2018-04-01

The growth mechanism of GaN epitaxial layers on mechanically exfoliated graphite is explained in detail based on classic nucleation theory. The number of defects on the graphite surface can be increased via O-plasma treatment, leading to increased nucleation density on the graphite surface. The addition of elemental Al can effectively improve the nucleation rate, which can promote the formation of dense nucleation layers and the lateral growth of GaN epitaxial layers. The surface morphologies of the nucleation layers, annealed layers and epitaxial layers were characterized by field-emission scanning electron microscopy, where the evolution of the surface morphology coincided with a 3D-to-2D growth mechanism. High-resolution transmission electron microscopy was used to characterize the microstructure of GaN. Fast Fourier transform diffraction patterns showed that cubic phase (zinc-blend structure) GaN grains were obtained using conventional GaN nucleation layers, while the hexagonal phase (wurtzite structure) GaN films were formed using AlGaN nucleation layers. Our work opens new avenues for using highly oriented pyrolytic graphite as a substrate to fabricate transferable optoelectronic devices.

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.

PubMed

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe; Jiang, Haiwei

2018-04-27

The growth mechanism of GaN epitaxial layers on mechanically exfoliated graphite is explained in detail based on classic nucleation theory. The number of defects on the graphite surface can be increased via O-plasma treatment, leading to increased nucleation density on the graphite surface. The addition of elemental Al can effectively improve the nucleation rate, which can promote the formation of dense nucleation layers and the lateral growth of GaN epitaxial layers. The surface morphologies of the nucleation layers, annealed layers and epitaxial layers were characterized by field-emission scanning electron microscopy, where the evolution of the surface morphology coincided with a 3D-to-2D growth mechanism. High-resolution transmission electron microscopy was used to characterize the microstructure of GaN. Fast Fourier transform diffraction patterns showed that cubic phase (zinc-blend structure) GaN grains were obtained using conventional GaN nucleation layers, while the hexagonal phase (wurtzite structure) GaN films were formed using AlGaN nucleation layers. Our work opens new avenues for using highly oriented pyrolytic graphite as a substrate to fabricate transferable optoelectronic devices.

Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhat, Thirumaleshwara N.; Rajpalke, Mohana K.; Krupanidhi, S. B.

Phase pure wurtzite GaN films were grown on Si (100) substrates by introducing a silicon nitride layer followed by low temperature GaN growth as buffer layers. GaN films grown directly on Si (100) were found to be phase mixtured, containing both cubic ({beta}) and hexagonal ({alpha}) modifications. The x-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN films grown with silicon nitride buffer layer grown at 800 deg. C when compared to the samples grown in the absence of silicon nitridemore » buffer layer and with silicon nitride buffer layer grown at 600 deg. C. Core-level photoelectron spectroscopy of Si{sub x}N{sub y} layers reveals the sources for superior qualities of GaN epilayers grown with the high temperature substrate nitridation process. The discussion has been carried out on the typical inverted rectification behavior exhibited by n-GaN/p-Si heterojunctions. Considerable modulation in the transport mechanism was observed with the nitridation conditions. The heterojunction fabricated with the sample of substrate nitridation at high temperature exhibited superior rectifying nature with reduced trap concentrations. Lowest ideality factors ({approx}1.5) were observed in the heterojunctions grown with high temperature substrate nitridation which is attributed to the recombination tunneling at the space charge region transport mechanism at lower voltages and at higher voltages space charge limited current conduction is the dominating transport mechanism. Whereas, thermally generated carrier tunneling and recombination tunneling are the dominating transport mechanisms in the heterojunctions grown without substrate nitridation and low temperature substrate nitridation, respectively.« less

Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

NASA Astrophysics Data System (ADS)

Bessolov, V. N.; Grashchenko, A. S.; Konenkova, E. V.; Myasoedov, A. V.; Osipov, A. V.; Red'kov, A. V.; Rodin, S. N.; Rubets, V. P.; Kukushkin, S. A.

2015-10-01

A new effect of the n-and p-type doping of the Si(100) substrate with a SiC film on the growth mechanism and structure of AlN and GaN epitaxial layers has been revealed. It has been experimentally shown that the mechanism of AlN and GaN layer growth on the surface of a SiC layer synthesized by substituting atoms on n- and p-Si substrates is fundamentally different. It has been found that semipolar AlN and GaN layers on the SiC/Si(100) surface grow in the epitaxial and polycrystalline structures on p-Si and n-Si substrates, respectively. A new method for synthesizing epitaxial semipolar AlN and GaN layers by chloride-hydride epitaxy on silicon substrates has been proposed.

Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes.

PubMed

Zhao, Peng; Zhao, Hongping

2012-09-10

The enhancement of light extraction efficiency for thin-film flip-chip (TFFC) InGaN quantum wells (QWs) light-emitting diodes (LEDs) with GaN micro-domes on n-GaN layer was studied. The light extraction efficiency of TFFC InGaN QWs LEDs with GaN micro-domes were calculated and compared to that of the conventional TFFC InGaN QWs LEDs with flat surface. The three dimensional finite difference time domain (3D-FDTD) method was used to calculate the light extraction efficiency for the InGaN QWs LEDs emitting at 460nm and 550 nm, respectively. The effects of the GaN micro-dome feature size and the p-GaN layer thickness on the light extraction efficiency were studied systematically. Studies indicate that the p-GaN layer thickness is critical for optimizing the TFFC LED light extraction efficiency. Significant enhancement of the light extraction efficiency (2.5-2.7 times for λ(peak) = 460nm and 2.7-2.8 times for λ(peak) = 550nm) is achievable from TFFC InGaN QWs LEDs with optimized GaN micro-dome diameter and height.

Properties of Epitaxial GaN on Refractory Metal Substrates

DTIC Science & Technology

2007-02-28

Rowland Aymont Technology, Inc., Scotia, New York 12302 Jihyun Kim College of Engineering, Korea University, Seoul 136-701, South Korea Mohammad Fatemi...M. Li, D. Wang, C. Ahyi, C.-C. Tin, J. Williams, and M. Park , Appl. Phys. Lett. 88, 113509 2001. FIG. 4. I-V characteristic of the GaN film on 111

Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Kyuseung; Chae, Sooryong; Jang, Jongjin

2016-04-15

In this study, self-assembled inclined (1-10-3)-oriented GaN nanorods (NRs) were grown on nanoimprinted (10-10) m-sapphire substrates using catalyst-free metal-organic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were tilted at an angle of ∼57.5° to the [10-10]{sub sapp} direction. Specifically, the GaN NRs grew in a single inclined direction to the [11-20]{sub sapp}. Uni-directionally inclined NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN plane layer. It was confirmed that a thin layer of a-GaN was formed on r-facet nanogrooves of the m-sapphire substrate by nitridation. The interfacial a-GaN nucleation affected both the inclinedmore » angle and the growth direction of the inclined GaN NRs. Using X-ray diffraction and selective area electron diffraction, the epitaxial relationship between the inclined (1-10-3) GaN NRs and interfacial a-GaN layer on m-sapphire substrates was systematically investigated. Moreover, the inclined GaN NRs were observed to be mostly free of stacking fault-related defects using high-resolution transmission electron microscopy.« less

Stress related aspects of GaN technology physics

NASA Astrophysics Data System (ADS)

Suhir, Ephraim

2015-03-01

Simple, easy-to-use and physically meaningful analytical models have been developed for the assessment of the combined effect of the lattice and thermal mismatch on the induced stresses in an elongated bi-material assembly, as well as on the thermal mismatch on the thermal stresses in a tri-material assembly, in which the lattice mismatched stresses are eliminated in one way or another. This could be done, e.g., by using a polished or an etched substrate. The analysis is carried out in application to Gallium Nitride (GaN)-Silicon Carbide (SiC) and GaN-diamond (C) filmsubstrate assemblies. The calculated data are obtained, assuming that no annealing or other stress reduction means is applied. The data agree reasonably well with the reported (available) in-situ measurements. The most important conclusion from the computed data is that even if a reasonably good lattice match takes place (as, e.g., in the case of a GaN film fabricated on a SiC substrate, when the mismatch strain is only about 3%) and, in addition, the temperature change (from the fabrication/growth temperature to the operation temperature) is significant (as high as 1000 °C), the thermal stresses are still considerably lower than the lattice-mismatch stresses. Although there are structural and technological means for further reduction of the lattice-mismatch stresses (e.g., by high temperature annealing or by providing one or more buffering layers, or by using patterned or porous substrates), there is still a strong incentive to eliminate completely the lattice mismatch stresses. This seems to be indeed possible, if polished or otherwise flattened (e.g., chemically etched) substrates and sputter deposited GaN film is employed. In such a case only thermal stresses remain, but even these could be reduced, if necessary, by using compliant buffering layers, including layers of variable compliance, or by introducing variable compliance into the properly engineered substrate. In any event, it is expected that strong adhesion could be achieved by using an appropriate fabrication technology, so that no GaN film cracking would be possible, if the film is in tension, or delamination buckling could occur if the film is in compression. The developed models can be used to assess the possibilities and opportunities associated with GaN materials technology.

Determination of carrier diffusion length in GaN

NASA Astrophysics Data System (ADS)

Hafiz, Shopan; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen; Gil, Bernard

2015-01-01

Diffusion lengths of photo-excited carriers along the c-direction were determined from photoluminescence (PL) and cross-sectional cathodoluminescence (CL) measurements in p- and n-type GaN epitaxial layers grown on c-plane sapphire by metal-organic chemical vapor deposition. The investigated samples incorporate a 6 nm thick In0.15Ga0.85N active layer capped with either 500 nm p-GaN or 1500 nm n-GaN. The top GaN layers were etched in steps and PL from the InGaN active region and the underlying layers was monitored as a function of the top GaN thickness upon photo-generation near the surface region by above bandgap excitation. Taking into consideration the absorption in the top GaN layer as well as active and underlying layers, the diffusion lengths at 295 K and at 15 K were measured to be 93 ± 7 nm and 70 ± 7 nm for Mg-doped p-type GaN and 432 ± 30 nm and 316 ± 30 nm for unintentionally doped n-type GaN, respectively, at photogenerated carrier densities of 4.2 × 1018 cm-3 using PL spectroscopy. CL measurements of the unintentionally doped n-type GaN layer at much lower carrier densities of 1017 cm-3 revealed a longer diffusion length of 525 ± 11 nm at 6 K.

GaN based nanorods for solid state lighting

NASA Astrophysics Data System (ADS)

Li, Shunfeng; Waag, Andreas

2012-04-01

In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

Low Temperature Locally-Controlled Growth of Wide Bandgap Nitride and Diamond Films via Plasmon Resonance-Excited Kinetic Processes

DTIC Science & Technology

2015-06-18

Ga2O3  film  grown  on  gold/Si  substrate.   Since  then,  we  have  worked  on  TEM  imaging  of  the  1:8:4  GaN...rate   of   1Hz,   which   we   previously   reported   to   result   in   a   mixed   composition   of   GaN/ Ga2O3 ...indicates  a   GaN/ Ga2O3  layer  <  10  nm  thick.  However,  energy

Crystallographic tilt and in-plane anisotropies of an a-plane InGaN/GaN layered structure grown by MOCVD on r-plane sapphire using a ZnO buffer

NASA Astrophysics Data System (ADS)

Liu, H. F.; Liu, W.; Guo, S.; Chi, D. Z.

2016-03-01

High-resolution x-ray diffraction (HRXRD) was used to investigate the crystallographic tilts and structural anisotropies in epitaxial nonpolar a-plane InGaN/GaN grown by metal-organic chemical vapor deposition on r-plane sapphire using a ZnO buffer. The substrate had an unintentional miscut of 0.14° towards its [-4 2 2 3] axis. However, HRXRD revealed a tilt of 0.26° (0.20°) between the ZnO (GaN) (11-20) and the Al2O3 (1-102) atomic planes, with the (11-20) axis of ZnO (GaN) tilted towards its c-axis, which has a difference of 163° in azimuth from that of the substrate’s miscut. Excess broadenings in the GaN/ZnO (11-20) rocking curves (RCs) were observed along its c-axis. Specific analyses revealed that partial dislocations and anisotropic in-plane strains, rather than surface-related effects, wafer curvature or stacking faults, are the dominant factors for the structural anisotropy. The orientation of the partial dislocations is most likely affected by the miscut of the substrate, e.g. via tilting of the misfit dislocation gliding planes created during island coalescences. Their Burgers vector components in the growth direction, in turn, gave rise to crystallographic tilts in the same direction as that of the excess RC-broadenings.

Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach

NASA Astrophysics Data System (ADS)

Izyumskaya, N.; Okur, S.; Zhang, F.; Monavarian, M.; Avrutin, V.; Özgür, Ü.; Metzner, S.; Karbaum, C.; Bertram, F.; Christen, J.; Morkoç, H.

2014-03-01

Nonpolar m-plane GaN layers were grown on patterned Si (112) substrates by metal-organic chemical vapor deposition (MOCVD). A two-step growth procedure involving a low-pressure (30 Torr) first step to ensure formation of the m-plane facet and a high-pressure step (200 Torr) for improvement of optical quality was employed. The layers grown in two steps show improvement of the optical quality: the near-bandedge photoluminescence (PL) intensity is about 3 times higher than that for the layers grown at low pressure, and deep emission is considerably weaker. However, emission intensity from m-GaN is still lower than that of polar and semipolar (1 100 ) reference samples grown under the same conditions. To shed light on this problem, spatial distribution of optical emission over the c+ and c- wings of the nonpolar GaN/Si was studied by spatially resolved cathodoluminescence and near-field scanning optical microscopy.

Synthesis of p-type GaN nanowires.

PubMed

Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

2013-09-21

GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.

Silicon-on-insulator with hybrid orientations for heterogeneous integration of GaN on Si (100) substrate

NASA Astrophysics Data System (ADS)

Zhang, Runchun; Zhao, Beiji; Huang, Kai; You, Tiangui; Jia, Qi; Lin, Jiajie; Zhang, Shibin; Yan, Youquan; Yi, Ailun; Zhou, Min; Ou, Xin

2018-05-01

Heterogeneous integration of materials pave a new way for the development of the microsystem with miniaturization and complex functionalities. Two types of hybrid silicon on insulator (SOI) structures, i.e., Si (100)-on-Si (111) and Si (111)-on-Si (100), were prepared by the smart-cut technique, which is consist of ion-slicing and wafer bonding. The precise calculation of the lattice strain of the transferred films without the epitaxial matching relationship to the substrate was demonstrated based on X-ray diffraction (XRD) measurements. The XRD and Raman measurement results suggest that the transferred films possess single crystalline quality. With a chemical mechanical polishing (CMP) process, the surface roughness of the transferred thin films can be reduced from 5.57 nm to 0.30 nm. The 4-inch GaN thin film epitaxially grown on the as-prepared hybrid SOI of Si (111)-on-Si (100) by metalorganic chemical vapor deposition (MOCVD) is of improved quality with a full width at half maximum (FWHM) of 672.54 arcsec extracted from the XRD rocking curve and small surface roughness of 0.40 nm. The wafer-scale GaN on Si (111)-on-Si (100) can serve as a potential platform for the one chip integration of GaN-based high electron mobility transistors (HEMT) or photonics with the Si (100)-based complementary metal oxide semiconductor (CMOS).

Hydrogen dissociation in the deposition of GaN films with ECR-PECVD process

NASA Astrophysics Data System (ADS)

Fu, S. L.; Wang, C. A.; Ding, L. C.; Qin, Y. X.

2018-05-01

The hydrogen dissociation and its effect on the GaN film growth in the ECR-PECVD process are investigated in this paper. We use N2 and trimethylgallium (TMG) as N and Ga sources respectively in the ECR- PECVD process. The results show that the rate of hydrogen dissociation increases with the microwave power and it becomes higher at high microwave power (> 500 W). However, this population increase of the H species dissociated from the TMG gas in ECR plasma is not enough to change the growth condition from Ga-rich to N-rich.

Strain-mediated electronic properties of pristine and Mn-doped GaN monolayers

NASA Astrophysics Data System (ADS)

Sharma, Venus; Srivastava, Sunita

2018-04-01

Graphene-like two-dimensional (2D) monolayer structures GaN has gained enormous amount of interest due to high thermal stability and inherent energy band gap for practical applications. First principles calculations are performed to investigate the electronic structure and strain-mediated electronic properties of pristine and Mn-doped GaN monolayer. Binding energy of Mn dopant at various adsorption site is found to be nearly same indicating these sites to be equally favorable for adsorption of foreign atom. Depending on the adsorption site, GaN monolayer can act as p-type or n-type magnetic semiconductor. The tensile strength of both pristine and doped GaN monolayer (∼24 GPa) at ultimate tensile strain of 34% is comparable with the tensile strength of graphene. The in-plane biaxial strain modulate the energy band gap of both pristine and doped-monolayer from direct to indirect gap semiconductor and finally retendered theme into metal at critical value of applied strain. These characteristics make GaN monolayer to be potential candidate for the future applications in tunable optoelectronics.

Lateral polarity control of III-nitride thin film and application in GaN Schottky barrier diode

NASA Astrophysics Data System (ADS)

Li, Junmei; Guo, Wei; Sheikhi, Moheb; Li, Hongwei; Bo, Baoxue; Ye, Jichun

2018-05-01

N-polar and III-polar GaN and AlN epitaxial thin films grown side by side on single sapphire substrate was reported. Surface morphology, wet etching susceptibility and bi-axial strain conditions were investigated and the polarity control scheme was utilized in the fabrication of Schottky barrier diode where ohmic contact and Schottky contact were deposited on N-polar domains and Ga-polar domains, respectively. The influence of N-polarity on on-state resistivity and I–V characteristic was discussed, demonstrating that lateral polarity structure of GaN and AlN can be widely used in new designs of optoelectronic and electronic devices. Project partially supported by the National Key Research and Development Program of China (No. 2016YFB0400802), the National Natural Science Foundation of China (No. 61704176), and the Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications (No. ZJUAMIS1704).

Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suski, T.; Litwin-Staszewska, E.; Piotrzkowski, R.

We demonstrate that relatively small GaN substrate misorientation can strongly change hole carrier concentration in Mg doped GaN layers grown by metalorganic vapor phase epitaxy. In this work intentionally misoriented GaN substrates (up to 2 deg. with respect to ideal <0001> plane) were employed. An increase in the hole carrier concentration to the level above 10{sup 18} cm{sup -3} and a decrease in GaN:Mg resistivity below 1 {omega} cm were achieved. Using secondary ion mass spectroscopy we found that Mg incorporation does not change with varying misorientation angle. This finding suggests that the compensation rate, i.e., a decrease in unintentionalmore » donor density, is responsible for the observed increase in the hole concentration. Analysis of the temperature dependence of electrical transport confirms this interpretation.« less

Resistivity control of unintentionally doped GaN films

NASA Astrophysics Data System (ADS)

Grzegorczyk, A. P.; Macht, L.; Hageman, P. R.; Rudzinski, M.; Larsen, P. K.

2005-05-01

GaN epilayers were grown on sapphire substrates via low temperature GaN and AlN nucleation layers (NL) by metalorganic chemical vapor phase epitaxy (MOCVD). The morphology of the individual NLs strongly depends on the carrier gas used during the growth and recrystallization and this is the key factor for control of the resistivity of the GaN layer grown on it. The GaN nucleation layer grown in presence of N2 has a higher density of islands with a statistically smaller diameter than the samples grown in H2 atmosphere. The NL grown in N2 enables the growth GaN with a sheet resistivity higher than 3×104 cm as opposed to a 0.5 cm value obtained for the NL grown in H2. Introduction of an additional intermediate (IL) low temperature (GaN or AlN) nucleation layer changes the GaN epilayer resistivity to about 50 cm, regardless of the carrier gas used during the growth of the IL. Defect selective etching demonstrated that control of the type and density of the dislocations in GaN enables the growth of highly resistive layers without any intentional acceptor doping (Mg, Zn). It will be demonstrated that by changing the ratio of edge type to screw dislocations the resistivity of the layer can be changed by a few orders of magnitude.

Ga flux dependence of Er-doped GaN luminescent thin films

NASA Astrophysics Data System (ADS)

Lee, D. S.; Steckl, A. J.

2002-02-01

Er-doped GaN thin films have been grown on (111) Si substrates with various Ga fluxes in a radio frequency plasma molecular beam epitaxy system. Visible photoluminescence (PL) and electroluminescence (EL) emission at 537/558 nm and infrared (IR) PL emission at 1.5 μm from GaN:Er films exhibited strong dependence on the Ga flux. Both visible and IR PL and visible EL increase with the Ga flux up to the stoichiometric growth condition, as determined by growth rate saturation. Beyond this condition, all luminescence levels abruptly dropped to the detection limit with increasing Ga flux. The Er concentration, measured by secondary ion mass spectroscopy and Rutherford backscattering, decreases with increasing Ga flux under N-rich growth conditions and remains constant above the stoichiometric growth condition. X-ray diffraction indicated that the crystalline quality of the GaN:Er film was improved with increasing Ga flux up to stoichiometric growth condition and then saturated. Er ions in the films grown under N-rich conditions appear much more optically active than those in the films grown under Ga-rich conditions.

High thermal stability of abrupt SiO2/GaN interface with low interface state density

NASA Astrophysics Data System (ADS)

Truyen, Nguyen Xuan; Taoka, Noriyuki; Ohta, Akio; Makihara, Katsunori; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Shimizu, Mitsuaki; Miyazaki, Seiichi

2018-04-01

The effects of postdeposition annealing (PDA) on the interface properties of a SiO2/GaN structure formed by remote oxygen plasma-enhanced chemical vapor deposition (RP-CVD) were systematically investigated. X-ray photoelectron spectroscopy clarified that PDA in the temperature range from 600 to 800 °C has almost no effects on the chemical bonding features at the SiO2/GaN interface, and that positive charges exist at the interface, the density of which can be reduced by PDA at 800 °C. The capacitance-voltage (C-V) and current density-SiO2 electric field characteristics of the GaN MOS capacitors also confirmed the reduction in interface state density (D it) and the improvement in the breakdown property of the SiO2 film after PDA at 800 °C. Consequently, a high thermal stability of the SiO2/GaN structure with a low fixed charge density and a low D it formed by RP-CVD was demonstrated. This is quite informative for realizing highly robust GaN power devices.

Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fireman, Micha N.; Browne, David A.; Speck, James S.

The design of isotype InGaN/GaN heterobarrier diode structures grown by ammonia molecular beam epitaxy is presented. On the (0001) Ga-polar plane, a structure consisting of a surface n{sup +} GaN contact layer, followed by a thin InGaN layer, followed by a thick unintentionally doped (UID) GaN layer, and atop a buried n{sup +} GaN contact layer induces a large conduction band barrier via a depleted UID GaN layer. Suppression of reverse and subthreshold current in such isotype barrier devices under applied bias depends on the quality of this composite layer polarization. Sample series were grown under fixed InGaN growth conditionsmore » that varied either the UID GaN NH{sub 3} flow rate or the UID GaN thickness, and under fixed UID GaN growth conditions that varied InGaN growth conditions. Decreases in subthreshold current and reverse bias current were measured for thicker UID GaN layers and increasing InGaN growth rates. Temperature-dependent analysis indicated that although extracted barrier heights were lower than those predicted by 1D Schrödinger Poisson simulations (0.9 eV–1.4 eV for In compositions from 10% to 15%), optimized growth conditions increased the extracted barrier height from ∼11% to nearly 85% of the simulated values. Potential subthreshold mechanisms are discussed, along with those growth factors which might affect their prevalence.« less

AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers

DOE PAGES

Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun; ...

2017-09-26

AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated for structures grown on ZrTi metallic alloy buffer layers, which provided lattice matching of the in-plane lattice parameter (“a-parameter”) to hexagonal GaN. The quality of the GaN buffer layer and HEMT structure were confirmed with X-ray 2θ and rocking scans as well as cross-section transmission electron microscopy (TEM) images. The X-ray 2θ scans showed full widths at half maximum (FWHM) of 0.06°, 0.05° and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM of the lower section of the HEMT structure containing the GaN buffer layer andmore » the AlN/ZrTi/AlN stack on the Si substrate showed that it was important to grow AlN on the top of ZrTi prior to growing the GaN buffer layer. Finally, the estimated threading dislocation (TD) density in the GaN channel layer of the HEMT structure was in the 10 8 cm -2 range.« less

Study of the structure of 3D-ordered macroporous GaN-ZnS:Mn nanocomposite films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurdyukov, D. A., E-mail: kurd@gvg.ioffe.ru; Shishkin, I. I.; Grudinkin, S. A.

A film-type 3D-ordered macroporous GaN-ZnS:Mn nanocomposite with the structure of an inverted opal is fabricated. Structural studies of the nanocomposite are performed, and it is shown that GaN and ZnS:Mn introduced into the pores of the silica opal are nanocrystallites misoriented with respect to each other. It is shown that the nanocomposite is a structurally perfect 3D photonic crystal. The efficiency of using a buffer of GaN crystallites to preclude interaction between the surface of the spherical a-SiO{sub 2} particles forming the opal matrix and chemically active substances introduced into the pores is demonstrated.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Calabrese, Gabriele, E-mail: calabrese@pdi-berlin.de; Corfdir, Pierre; Gao, Guanhui

We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowires by transmission electron microscopy reveals that they are single crystalline. Low-temperature photoluminescence spectroscopy demonstrates that in comparison to standard GaN nanowires grown on Si, the nanowires prepared on the Ti foil exhibit an equivalent crystalline perfection, a higher density of basal-plane stacking faults, but a reduced density of inversion domain boundaries. The room-temperature photoluminescence spectrum of the nanowire ensemble is not influenced or degraded by the bending of the substrate. The present results pavemore » the way for the fabrication of flexible optoelectronic devices based on GaN nanowires on metal foils.« less

Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate

PubMed Central

Zhang, Lei; Yu, Jiaoxian; Hao, Xiaopeng; Wu, Yongzhong; Dai, Yuanbin; Shao, Yongliang; Zhang, Haodong; Tian, Yuan

2014-01-01

GaN crystals without cracks were successfully grown on a MOCVD-GaN/6H-SiC (MGS) substrate with a low V/III ratio of 20 at initial growth. With a high V/III ratio of 80 at initial growth, opaque GaN polycrystals were obtained. The structural analysis and optical characterization reveal that stress has a great influence on the growth of the epitaxial films. An atomic level model is used to explain these phenomena during crystal growth. It is found that atomic mobility is retarded by compressive stress and enhanced by tensile stress. PMID:24569601

Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD.

PubMed

Mena, Josué; Carvajal, Joan J; Martínez, Oscar; Jiménez, Juan; Zubialevich, Vitaly Z; Parbrook, Peter J; Diaz, Francesc; Aguiló, Magdalena

2017-09-15

In this paper we study the optical properties of nanoporous gallium nitride (GaN) epitaxial layers grown by chemical vapour deposition on non-porous GaN substrates, using photoluminescence, cathodoluminescence, and resonant Raman scattering, and correlate them with the structural characteristic of these films. We pay special attention to the analysis of the residual strain of the layers and the influence of the porosity in the light extraction. The nanoporous GaN epitaxial layers are under tensile strain, although the strain is progressively reduced as the deposition time and the thickness of the porous layer increases, becoming nearly strain free for a thickness of 1.7 μm. The analysis of the experimental data point to the existence of vacancy complexes as the main source of the tensile strain.

Unveiling structural, chemical and magnetic interfacial peculiarities in ε-Fe2O3/GaN (0001) epitaxial films.

PubMed

Ukleev, Victor; Suturin, Sergey; Nakajima, Taro; Arima, Taka-Hisa; Saerbeck, Thomas; Hanashima, Takayasu; Sitnikova, Alla; Kirilenko, Demid; Yakovlev, Nikolai; Sokolov, Nikolai

2018-06-07

The metastable ε-Fe 2 O 3 is known to be the most intriguing ferrimagnetic and multiferroic iron oxide phase exhibiting a bunch of exciting physical properties both below and above room temperature. The present paper unveils the structural and magnetic peculiarities of a few nm thick interface layer discovered in these films by a number of techniques. The polarized neutron reflectometry data suggests that the interface layer resembles GaFeO 3 in composition and density and is magnetically softer than the rest of the ε-Fe 2 O 3 film. While the in-depth density variation is in agreement with the transmission electron microscopy measurements, the layer-resolved magnetization profiles are qualitatively consistent with the unusual wasp-waist magnetization curves observed by superconducting quantum interference device magnetometry. Interestingly a noticeable Ga diffusion into the ε-Fe 2 O 3 films has been detected by secondary ion mass spectroscopy providing a clue to the mechanisms guiding the nucleation of exotic metastable epsilon ferrite phase on GaN at high growth temperature and influencing the interfacial properties of the studied films.

Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes

NASA Astrophysics Data System (ADS)

Monavarian, Morteza; Metzner, Sebastian; Izyumskaya, Natalia; Okur, Serdal; Zhang, Fan; Can, Nuri; Das, Saikat; Avrutin, Vitaliy; Özgür, Ümit; Bertram, Frank; Christen, Jürgen; Morkoç, Hadis

2015-03-01

Reduced electric field in semipolar (1122) GaN/InGaN heterostructures makes this orientation attractive for high efficiency light emitting diodes. In this work, we investigated indium incorporation in semipolar (1122) GaN grown by metal-organic chemical vapor deposition on planar m-plane sapphire substrates. Indium content in the semipolar material was compared with that in polar c-plane samples grown under the same conditions simultaneously side by side on the same holder. The investigated samples incorporated dual GaN/InGaN/GaN double heterostructures with 3nm wide wells. In order to improve optical quality, both polar and semipolar templates were grown using an in-situ epitaxial lateral overgrowth (ELO) technique. Indium incorporation efficiency was derived from the comparison of PL spectra measured on the semipolar and polar structures at the highest excitation density, which allowed us to minimize the effect of quantum confined Stark effect on the emission wavelength. Our data suggests increased indium content in the semipolar material by up to 3.0%, from 15% In in c- GaN to 18% In in (1122) GaN.

Combined angle-resolved X-ray photoelectron spectroscopy, density functional theory and kinetic study of nitridation of gallium arsenide

NASA Astrophysics Data System (ADS)

Mehdi, H.; Monier, G.; Hoggan, P. E.; Bideux, L.; Robert-Goumet, C.; Dubrovskii, V. G.

2018-01-01

The high density of interface and surface states that cause the strong Fermi pinning observed on GaAs surfaces can be reduced by depositing GaN ultra-thin films on GaAs. To further improve this passivation, it is necessary to investigate the nitridation phenomena by identifying the distinct steps occurring during the process and to understand and quantify the growth kinetics of GaAs nitridation under different conditions. Nitridation of the cleaned GaAs substrate was performed using N2 plasma source. Two approaches have been combined. Firstly, an AR-XPS (Angle Resolved X-ray Photoelectron Spectroscopy) study is carried out to determine the chemical environments of the Ga, As and N atoms and the composition depth profile of the GaN thin film which allow us to summarize the nitridation process in three steps. Moreover, the temperature and time treatment have been investigated and show a significant impact on the formation of the GaN layer. The second approach is a refined growth kinetic model which better describes the GaN growth as a function of the nitridation time. This model clarifies the exchange mechanism of arsenic with nitrogen atoms at the GaN/GaAs interface and the phenomenon of quasi-saturation of the process observed experimentally.

Phase-field simulations of GaN growth by selective area epitaxy on complex mask geometries

DOE PAGES

Aagesen, Larry K.; Coltrin, Michael Elliott; Han, Jung; ...

2015-05-15

Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. Furthermore, this model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. We found that the model provides a route to optimize masks andmore » processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.« less

Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roul, Basanta; Kumar, Mahesh; Central Research Laboratory, Bharat Electronics, Bangalore 560013

We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm{sup -1} in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy.

Simulation of optimum parameters for GaN MSM UV photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alhelfi, Mohanad A., E-mail: mhad12344@gmail.com; Ahmed, Naser M., E-mail: nas-tiji@yahoo.com; Hashim, M. R., E-mail: roslan@usm.my

2016-07-06

In this study the optimum parameters of GaN M-S-M photodetector are discussed. The evaluation of the photodetector depends on many parameters, the most of the important parameters the quality of the GaN film and others depend on the geometry of the interdigited electrode. In this simulation work using MATLAB software with consideration of the reflection and absorption on the metal contacts, a detailed study involving various electrode spacings (S) and widths (W) reveals conclusive results in device design. The optimum interelectrode design for interdigitated MSM-PD has been specified and evaluated by effect on quantum efficiency and responsivity.

Formation of gallium nitride templates and freestanding substrates by hydride vapor phase epitaxy for homoepitaxial growth of III-nitride devices

NASA Astrophysics Data System (ADS)

Williams, Adrian Daniel

Gallium nitride (GaN) is a direct wide band gap semiconductor currently under heavy development worldwide due to interest in its applications in ultra-violet optoelectronics, power electronics, devices operating in harsh environments (high temperature or corrorsive), etc. While a number of devices have been demonstrated with this material and its related alloys, the unavailability of GaN substrates is seen as one of the current major bottlenecks to both material quality and device performance. This dissertation is concerned with the synthesis of high quality GaN substrates by the hydride vapor phase epitaxy method (HVPE). In this work, the flow of growth precursors in a home-built HVPE reactor was modeled by the Navier-Stokes equation and solved by finite element analysis to promote uniformity of GaN on 2'' sapphire substrates. Kinetics of growth was studied and various regimes of growth were identified to establish a methodology for HVPE GaN growth, independent of reactor geometry. GaN templates as well as bulk substrates were fabricated in this work. Realization of freestanding GaN substrates was achieved through discovery of a natural stress-induced method of separating bulk GaN from sapphire via mechanical failure of a low-temperature GaN buffer layer. Such a process eliminates the need for pre- or post-processing of sapphire substrates, as is currently the standard. Stress in GaN-on-sapphire is discussed, with the dominant contributor identified as thermal stress due to thermal expansion coefficient mismatch between the two materials. This thermal stress is analyzed using Stoney's equation and conditions for crack-free growth of thick GaN substrates were identified. An etch-back process for planarizing GaN templates was also developed and successfully applied to rough GaN templates. The planarization of GaN has been mainly addressed by chemo-mechanical polishing (CMP) methods in the literature, with notable shortcomings including the inability to effectively planarize gallium-polar GaN, the preferred growth plane for devices. The process developed in this work bypasses the constraints of CMP, allowing for the planarization of all surfaces of GaN irrespective of crystal orientation. The GaN samples grown for this dissertation were studied by various techniques to characterize their structural, optical, and electrical properties.

Site-controlled crystalline InN growth from the V-pits of a GaN substrate

NASA Astrophysics Data System (ADS)

Kuo, Chien-Ting; Hsu, Lung-Hsing; Lai, Yung-Yu; Cheng, Shan-Yun; Kuo, Hao-Chung; Lin, Chien-Chung; Cheng, Yuh-Jen

2017-05-01

A site-controlled crystalline InN growth from the V-pits of a GaN substrate was investigated. The V- pits were fabricated by epitaxial lateral growth of GaN over SiO2 disks patterned on a sapphire substrate. InN crystals were found to preferably grow on the inclined {10-11} crystal planes of the V-pits. A V-pit size of 1 μm or less can provide precise site-controlled InN nucleation at the V-pit bottom, while no InN was grown on the rest of the exposed GaN surfaces. The site-controlled nucleation is attributed to the low surface energy point created by the converging six {10-11} crystal facets at the V-pit bottom. When In source supply is below a certain value, this V-pit bottom is the only location able to aggregate enough active sources to start nucleation, thereby providing site-controlled crystal growth.

Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN

NASA Astrophysics Data System (ADS)

Monavarian, Morteza; Hafiz, Shopan; Izyumskaya, Natalia; Das, Saikat; Özgür, Ümit; Morkoç, Hadis; Avrutin, Vitaliy

2016-02-01

Heteroepitaxial semipolar and nonpolar GaN layers often suffer from high densities of extended defects including basal plane stacking faults (BSFs). BSFs which are considered as inclusions of cubic zinc-blende phase in wurtzite matrix act as quantum wells strongly affecting device performance. Band alignment in BSFs has been discussed as type of band alignment at the wurtzite/zinc blende interface governs the response in differential transmission; fast decay after the pulse followed by slow recovery due to spatial splitting of electrons and heavy holes for type- II band alignment in contrast to decay with no recovery in case of type I band alignment. Based on the results, band alignment is demonstrated to be of type II in zinc-blende segments in wurtzite matrix as in BSFs.

Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation.

PubMed

Hwang, Jih-Shang; Liu, Tai-Yan; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Chen, Han-Wei; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

2013-02-08

Enhanced photoelectrochemical (PEC) performances of Ga(2)O(3) and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga(2)O(3) and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga(2)O(3) NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga(2)O(3). These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga(2)O(3) NWs, or by incorporation of indium to form InGaN NWs.

Vertical architecture for enhancement mode power transistors based on GaN nanowires

NASA Astrophysics Data System (ADS)

Yu, F.; Rümmler, D.; Hartmann, J.; Caccamo, L.; Schimpke, T.; Strassburg, M.; Gad, A. E.; Bakin, A.; Wehmann, H.-H.; Witzigmann, B.; Wasisto, H. S.; Waag, A.

2016-05-01

The demonstration of vertical GaN wrap-around gated field-effect transistors using GaN nanowires is reported. The nanowires with smooth a-plane sidewalls have hexagonal geometry made by top-down etching. A 7-nanowire transistor exhibits enhancement mode operation with threshold voltage of 1.2 V, on/off current ratio as high as 108, and subthreshold slope as small as 68 mV/dec. Although there is space charge limited current behavior at small source-drain voltages (Vds), the drain current (Id) and transconductance (gm) reach up to 314 mA/mm and 125 mS/mm, respectively, when normalized with hexagonal nanowire circumference. The measured breakdown voltage is around 140 V. This vertical approach provides a way to next-generation GaN-based power devices.

Effects of hydrogen treatment on ohmic contacts to p-type GaN films

NASA Astrophysics Data System (ADS)

Huang, Bohr-Ran; Chou, Chia-Hui; Ke, Wen-Cheng; Chou, Yi-Lun; Tsai, Chia-Lung; Wu, Meng-chyi

2011-06-01

This study investigated the effects of hydrogen (H 2) treatment on metal contacts to Mg-doped p-GaN films by Hall-effect measurement, current-voltage ( I- V) analyzer and X-ray photoemission spectra (XPS). The interfacial oxide layer on the p-GaN surface was found to be the main reason for causing the nonlinear I- V behavior of the untreated p-GaN films. The increased nitrogen vacancy (V N) density due to increased GaN decomposition rate at high-temperature hydrogen treatment is believed to form high density surface states on the surface of p-GaN films. Compared to untreated p-GaN films, the surface Fermi level determined by the Ga 2p core-level peak on 1000 °C H 2-treated p-GaN films lies about ˜2.1 eV closer to the conduction band edge (i.e., the surface inverted to n-type behavior). The reduction in barrier height due to the high surface state density pinned the surface Fermi level close to the conduction band edge, and allowed the electrons to easily flow over the barrier from the metal into the p-GaN films. Thus, a good ohmic contact was achieved on the p-GaN films by the surface inversion method.

Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN

DOE PAGES

Perret, Edith; Xu, Dongwei; Highland, M. J.; ...

2017-12-04

Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase epitaxy on the (10more » $$\\bar{1}$$0) m-plane surface. The diffuse scattering is extended in the (0001) in-plane direction in reciprocal space, indicating a strong anisotropy with islands elongated along [1$$\\bar{2}$$10] and closely spaced along [0001]. This is confirmed by atomic force microscopy of a quenched sample. Islands were characterized as a function of growth rate F and temperature. Furthermore, the island spacing along [0001] observed during the growth of the first monolayer obeys a power-law dependence on growth rate F -n, with an exponent n=0.25±0.02. Our results are in agreement with recent kinetic Monte Carlo simulations, indicating that elongated islands result from the dominant anisotropy in step edge energy and not from surface diffusion anisotropy. The observed power-law exponent can be explained using a simple steady-state model, which gives n = 1/4.« less

Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perret, Edith; Xu, Dongwei; Highland, M. J.

Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase epitaxy on the (1010) m-plane surface. The diffuse scattering is extended in the (0001) in-plane direction in reciprocal space, indicating a strong anisotropy with islands elongated along [1210] and closely spaced along [0001]. This is confirmed by atomic force microscopy of a quenched sample. Islands were characterized as a function of growth rate F and temperature. The island spacing along [0001] observed during the growth of the first monolayer obeys a power-law dependence on growthmore » rate F-n, with an exponent n = 0:25 + 0.02. The results are in agreement with recent kinetic Monte Carlo simulations, indicating that elongated islands result from the dominant anisotropy in step edge energy and not from surface diffusion anisotropy. The observed power-law exponent can be explained using a simple steady-state model, which gives n = 1/4.« less

Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perret, Edith; Xu, Dongwei; Highland, M. J.

Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase epitaxy on the (10more » $$\\bar{1}$$0) m-plane surface. The diffuse scattering is extended in the (0001) in-plane direction in reciprocal space, indicating a strong anisotropy with islands elongated along [1$$\\bar{2}$$10] and closely spaced along [0001]. This is confirmed by atomic force microscopy of a quenched sample. Islands were characterized as a function of growth rate F and temperature. Furthermore, the island spacing along [0001] observed during the growth of the first monolayer obeys a power-law dependence on growth rate F -n, with an exponent n=0.25±0.02. Our results are in agreement with recent kinetic Monte Carlo simulations, indicating that elongated islands result from the dominant anisotropy in step edge energy and not from surface diffusion anisotropy. The observed power-law exponent can be explained using a simple steady-state model, which gives n = 1/4.« less

Epitaxial MoS2/GaN structures to enable vertical 2D/3D semiconductor heterostructure devices

NASA Astrophysics Data System (ADS)

Ruzmetov, D.; Zhang, K.; Stan, G.; Kalanyan, B.; Eichfeld, S.; Burke, R.; Shah, P.; O'Regan, T.; Crowne, F.; Birdwell, A. G.; Robinson, J.; Davydov, A.; Ivanov, T.

MoS2/GaN structures are investigated as a building block for vertical 2D/3D semiconductor heterostructure devices that utilize a 3D substrate (GaN) as an active component of the semiconductor device without the need of mechanical transfer of the 2D layer. Our CVD-grown monolayer MoS2 has been shown to be epitaxially aligned to the GaN lattice which is a pre-requisite for high quality 2D/3D interfaces desired for efficient vertical transport and large area growth. The MoS2 coverage is nearly 50 % including isolated triangles and monolayer islands. The GaN template is a double-layer grown by MOCVD on sapphire and allows for measurement of transport perpendicular to the 2D layer. Photoluminescence, Raman, XPS, Kelvin force probe microscopy, and SEM analysis identified high quality monolayer MoS2. The MoS2/GaN structures electrically conduct in the out-of-plane direction and across the van der Waals gap, as measured with conducting AFM (CAFM). The CAFM current maps and I-V characteristics are analyzed to estimate the MoS2/GaN contact resistivity to be less than 4 Ω-cm2 and current spreading in the MoS2 monolayer to be approx. 1 μm in diameter. Epitaxial MoS2/GaN heterostructures present a promising platform for the design of energy-efficient, high-speed vertical devices incorporating 2D layered materials with 3D semiconductors.

A Microstructural Analysis of Orientation Variation in Epitaxial AlN on Si, Its Probable Origin, and Effect on Subsequent GaN Growth

NASA Technical Reports Server (NTRS)

Beye, R.; George, T.; Yang, J. W.; Khan, M. A.

1996-01-01

A structural examination of aluminum nitride growth on [111] silicon was carried out using transmission electron microscopy. Electron diffraction indicates that the basal planes of the wurtzitic overlayer mimic the orientation of the close-packed planes of the substrate. However, considerable, random rotation in the basal plane and random out-of-plane tilts were evident. This article examines these issues with a structural examination of AlN and GaN/AlN on silicon and compares the findings to those reported in the literature.

Fast Growth of GaN Epilayers via Laser-Assisted Metal-Organic Chemical Vapor Deposition for Ultraviolet Photodetector Applications.

PubMed

Rabiee Golgir, Hossein; Li, Da Wei; Keramatnejad, Kamran; Zou, Qi Ming; Xiao, Jun; Wang, Fei; Jiang, Lan; Silvain, Jean-François; Lu, Yong Feng

2017-06-28

In this study, we successfully developed a carbon dioxide (CO 2 )-laser-assisted metal-organic chemical vapor deposition (LMOCVD) approach to fast synthesis of high-quality gallium nitride (GaN) epilayers on Al 2 O 3 [sapphire(0001)] substrates. By employing a two-step growth procedure, high crystallinity and smooth GaN epilayers with a fast growth rate of 25.8 μm/h were obtained. The high crystallinity was confirmed by a combination of techniques, including X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and atomic force microscopy. By optimizing growth parameters, the ∼4.3-μm-thick GaN films grown at 990 °C for 10 min showed a smooth surface with a root-mean-square surface roughness of ∼1.9 nm and excellent thickness uniformity with sharp GaN/substrate interfaces. The full-width at half-maximum values of the GaN(0002) X-ray rocking curve of 313 arcsec and the GaN(101̅2) X-ray rocking curve of 390 arcsec further confirmed the high crystallinity of the GaN epilayers. We also fabricated ultraviolet (UV) photodetectors based on the as-grown GaN layers, which exhibited a high responsivity of 0.108 A W -1 at 367 nm and a fast response time of ∼125 ns, demonstrating its high optical quality with potential in optoelectronic applications. Our strategy thus provides a simple and cost-effective means toward fast and high-quality GaN heteroepitaxy growth suitable for fabricating high-performance GaN-based UV detectors.

Nanoscale characterization of GaN/InGaN multiple quantum wells on GaN nanorods by photoluminescence spectroscopy

NASA Astrophysics Data System (ADS)

Chen, Weijian; Wen, Xiaoming; Latzel, Michael; Yang, Jianfeng; Huang, Shujuan; Shrestha, Santosh; Patterson, Robert; Christiansen, Silke; Conibeer, Gavin

2017-02-01

GaN/InGaN multiple quantum wells (MQW) and GaN nanorods have been widely studied as a candidate material for high-performance light emitting diodes. In this study, GaN/InGaN MQW on top of GaN nanorods are characterized in nanoscale using confocal microscopy associated with photoluminescence spectroscopy, including steady-state PL, timeresolved PL and fluorescence lifetime imaging (FLIM). Nanorods are fabricated by etching planar GaN/InGaN MQWs on top of a GaN layer on a c-plane sapphire substrate. Photoluminescence efficiency from the GaN/InGaN nanorods is evidently higher than that of the planar structure, indicating the emission improvement. Time-resolved photoluminescence (TRPL) prove that surface defects on GaN nanorod sidewalls have a strong influence on the luminescence property of the GaN/InGaN MWQs. Such surface defects can be eliminated by proper surface passivation. Moreover, densely packed nanorod array and sparsely standing nanorods have been studied for better understanding the individual property and collective effects from adjacent nanorods. The combination of the optical characterization techniques guides optoelectronic materials and device fabrication.

Differences in optoelectronic properties between H-saturated and unsaturated GaN nanowires with DFT method

NASA Astrophysics Data System (ADS)

Diao, Yu; Liu, Lei; Xia, Sihao; Kong, Yike

2017-05-01

To investigate the influences of dangling bonds on GaN nanowires surface, the differences in optoelectronic properties between H-saturated and unsaturated GaN nanowires are researched through first-principles study. The GaN nanowires along the [0001] growth direction with diameters of 3.7, 7.5 and 9.5 Å are considered. According to the results, H-saturated GaN nanowires are more stable than the unsaturated ones. With increasing nanowire diameter, unsaturated GaN nanowires become more stable, while the stability of H-saturated GaN nanowires has little change. After geometry optimization, the atomic displacements of unsaturated and H-saturated models are almost reversed. In (0001) crystal plane, Ga atoms tend to move inwards and N atoms tend to move outwards slightly for the unsaturated nanowires, while Ga atoms tend to move outwards and N atoms tend to move inwards slightly for the H-saturated nanowires. Besides, with increasing nanowire diameter, the conduction band minimum of H-saturated nanowire moves to the lower energy side, while that of the unsaturated nanowire changes slightly. The bandgaps of H-saturated nanowires are approaching to bulk GaN as the diameter increases. Absorption curves and reflectivity curves of the unsaturated and H-saturated nanowires exhibit the same trend with the change of energy except the H-saturated models which show larger variations. Through all the calculated results above, we can better understand the effects of dangling bonds on the optoelectronic properties of GaN nanowires and select more proper calculation models and methods for other calculations.

Growth optimization toward low angle incidence microchannel epitaxy of GaN using ammonia-based metal-organic molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Lin, Chia-Hung; Abe, Ryota; Uchiyama, Shota; Maruyama, Takahiro; Naritsuka, Shigeya

2012-08-01

Growth optimization toward low angle incidence microchannel epitaxy (LAIMCE) of GaN was accomplished using ammonia-based metal-organic molecular beam epitaxy (NH3-based MOMBE). Firstly, the [NH3]/[trimethylgallium (TMG)] ratio (R) dependence of selective GaN growth was studied. The growth temperature was set at 860 °C while R was varied from 5 to 200 with precursors being supplied parallel to the openings cut in the SiO2 mask. The selectivity of the growth was superior for all R, because TMG and NH3 preferably decompose on the GaN film. The formation of {112¯0}GaN or {112¯2}GaN sidewalls and (0001)GaN surface were observed by the change in R. The intersurface diffusion of Ga adatoms was also changed by a change in R. Ga adatoms migrate from the sidewalls to the top at R lower than 50, whereas the migration weakened with R greater than 100. Secondly, LAIMCE was optimized by changing the growth temperature. Consequently, 6 μm wide lateral overgrowth in the direction of precursor incidence was achieved with no pit after etching by H3PO4, which was six times wider than that in the opposite direction.

GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

DOE PAGES

Lin, Yong; Leung, Benjamin; Li, Qiming; ...

2015-07-14

In this study, ammonia-based molecular beam epitaxy (NH 3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH 3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH 3-MBE grown GaN nanowires show moremore » than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.« less

Heat resistive dielectric multi-layer micro-mirror array in epitaxial lateral overgrowth gallium nitride.

PubMed

Huang, Chen-Yang; Ku, Hao-Min; Liao, Wei-Tsai; Chao, Chu-Li; Tsay, Jenq-Dar; Chao, Shiuh

2009-03-30

Ta2O5 / SiO2 dielectric multi-layer micro-mirror array (MMA) with 3mm mirror size and 6mm array period was fabricated on c-plane sapphire substrate. The MMA was subjected to 1200 degrees C high temperature annealing and remained intact with high reflectance in contrast to the continuous multi-layer for which the layers have undergone severe damage by 1200 degrees C annealing. Epitaxial lateral overgrowth (ELO) of gallium nitride (GaN) was applied to the MMA that was deposited on both sapphire and sapphire with 2:56 mm GaN template. The MMA was fully embedded in the ELO GaN and remained intact. The result implies that our MMA is compatible to the high temperature growth environment of GaN and the MMA could be incorporated into the structure of the micro-LED array as a one to one micro backlight reflector, or as the patterned structure on the large area LED for controlling the output light.

III-N light emitting diodes fabricated using RF nitrogen gas source MBE

NASA Astrophysics Data System (ADS)

Van Hove, J. M.; Carpenter, G.; Nelson, E.; Wowchak, A.; Chow, P. P.

1996-07-01

Homo- and heterojunction III-N light emitting diodes using RF atomic nitrogen plasma molecular beam epitaxy have been grown. GaN films deposited on sapphire using this growth technique exhibited an extremely sharp X-ray diffraction with a full width half maximum of 112 arc sec. p-type doping of the nitride films was done with elemental Mg and resulted in as-grown p-type material with resistivities as low as 2 Ω · cm. Both homo- and heterojunction LEDs showed clear rectification. Emission from the GaN homojunction deposited on n-type SiC was peaked at 410 nm while the AlGaNGaN(Zn)AlGaN double heterojunction LEDs emission was centered about 520 nm.

Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

NASA Astrophysics Data System (ADS)

Wang, T.

2016-09-01

The most successful example of large lattice-mismatched epitaxial growth of semiconductors is the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and great success in developing InGaN-based blue emitters. However, the majority of achievements in the field of III-nitride optoelectronics are mainly limited to polar GaN grown on c-plane (0001) sapphire. This polar orientation poses a number of fundamental issues, such as reduced quantum efficiency, efficiency droop, green and yellow gap in wavelength coverage, etc. To date, it is still a great challenge to develop longer wavelength devices such as green and yellow emitters. One clear way forward would be to grow III-nitride device structures along a semi-/non-polar direction, in particular, a semi-polar orientation, which potentially leads to both enhanced indium incorporation into GaN and reduced quantum confined Stark effects. This review presents recent progress on developing semi-polar GaN overgrowth technologies on sapphire or Si substrates, the two kinds of major substrates which are cost-effective and thus industry-compatible, and also demonstrates the latest achievements on electrically injected InGaN emitters with long emission wavelengths up to and including amber on overgrown semi-polar GaN. Finally, this review presents a summary and outlook on further developments for semi-polar GaN based optoelectronics.

Photoluminescence enhancement from GaN by beryllium doping

NASA Astrophysics Data System (ADS)

García-Gutiérrez, R.; Ramos-Carrazco, A.; Berman-Mendoza, D.; Hirata, G. A.; Contreras, O. E.; Barboza-Flores, M.

2016-10-01

High quality Be-doped (Be = 0.19 at.%) GaN powder has been grown by reacting high purity Ga diluted alloys (Be-Ga) with ultra high purity ammonia in a horizontal quartz tube reactor at 1200 °C. An initial low-temperature treatment to dissolve ammonia into the Ga melt produced GaN powders with 100% reaction efficiency. Doping was achieved by dissolving beryllium into the gallium metal. The powders synthesized by this method regularly consist of two particle size distributions: large hollow columns with lengths between 5 and 10 μm and small platelets in a range of diameters among 1 and 3 μm. The GaN:Be powders present a high quality polycrystalline profile with preferential growth on the [10 1 bar 1] plane, observed by means of X-ray diffraction. The three characteristics growth planes of the GaN crystalline phase were found by using high resolution TEM microscopy. The optical enhancing of the emission in the GaN powder is attributed to defects created with the beryllium doping. The room temperature photoluminescence emission spectra of GaN:Be powders, revealed the presence of beryllium on a shoulder peak at 3.39 eV and an unusual Y6 emission at 3.32eV related to surface donor-acceptor pairs. Also, a donor-acceptor-pair transition at 3.17 eV and a phonon replica transition at 3.1 eV were observed at low temperature (10 K). The well-known yellow luminescence band coming from defects was observed in both spectra at room and low temperature. Cathodoluminescence emission from GaN:Be powders presents two main peaks associated with an ultraviolet band emission and the yellow emission known from defects. To study the trapping levels related with the defects formed in the GaN:Be, thermoluminescence glow curves were obtained using UV and β radiation in the range of 50 and 150 °C.

High Temperature Heterojunction Bipolar Transistors

DTIC Science & Technology

1994-04-15

Furthermore, p-type doping has only recently been announced in GaN,󈧒 and p-type conductivity had to be induced by irradiating Mg-doped GaN with a low ...confinement of the electron gas by a potential barrier should not be a problem even for low In concentrations. Although InN is not lattice matched to GaN...epitaxy.3 The films were grown by the reaction of Ga vapor with ECR-activated nitrogen . This study found that at low microwave power levels

Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.

PubMed

Tanaka, Atsunori; Choi, Woojin; Chen, Renjie; Dayeh, Shadi A

2017-10-01

Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN-on-Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 µm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 × 10 7 cm -2 achieved to date in GaN-on-Si is demonstrated. With these advances, the first vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost-effective high power device paradigm on an Si CMOS platform are demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Growth and characterization of GaN nanostructures under various ammoniating time with fabricated Schottky gas sensor based on Si substrate

NASA Astrophysics Data System (ADS)

Abdullah, Q. N.; Ahmed, A. R.; Ali, A. M.; Yam, F. K.; Hassan, Z.; Bououdina, M.; Almessiere, M. A.

2018-05-01

This paper presents the investigation of the influence of the ammoniating time of GaN nanowires (NWs) on the crystalline structure, surface morphology, and optical characteristics. Morphological analysis indicates the growth of good quality and high density of NWs with diameters around 50 nm and lengths up to tens of microns after ammoniating for 30 min. Structural analysis shows that GaN NWs have a typical hexagonal wurtzite crystal structure. Raman spectroscopy confirms the formation of GaN compound with the presence of compressive stress. Photoluminescence (PL) measurements revealed two band emissions, an UV and a broad visible emission. Hydrogen sensor was subsequently fabricated by depositing Pt Schottky contact onto GaN NWs film. The sensor response was measured at various H2 concentrations ranged from 200 up to 1200 ppm at room temperature. It was found that the response increases significantly for low H2 concentration (200-300 ppm) to reach about 50% then increases smoothly to reach 60% at 1200 ppm. The as-fabricated sensor possesses higher performances as compared to similar devices reported in the literature.

Ga2O3 and GaN nanocrystalline film: reverse micelle assisted solvothermal synthesis and characterization.

PubMed

Sinha, Godhuli; Ganguli, Dibyendu; Chaudhuri, Subhadra

2008-03-01

Gallium oxide (beta-Ga2O3) nanoparticles were successfully deposited on quartz glass substrates using sodium bis(2-ethylhexyl) sulfosuccinate (AOT)/n-hexane/ethylene glycol monomethyl ether (EGME) reverse micelle-mediated solvothermal process with different omega values. The mean diameter of Ga2O3 particles was approximately 2-3 nm and found to be approximately independent of omega values of the reverse micelles. However, when the Ga2O3 nanocrystalline films were nitrided at 900 degrees C under flowing NH3 atmosphere for 1 h, the mean diameter of the resulted gallium nitride (wurtzite-GaN) nanoparticles varied from 3-9 nm. Both nanocrystalline films of Ga2O3 and GaN were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy, UV-vis spectroscopy and photoluminescence in order to study their chemical and physical properties explicitly.

Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hosalli, A. M.; Van Den Broeck, D. M.; Bedair, S. M.

2013-12-02

We demonstrate a metalorganic chemical vapor deposition growth approach for inverting N-polar to Ga-polar GaN by using a thin inversion layer grown with high Mg flux. The introduction of this inversion layer allowed us to grow p-GaN films on N-polar GaN thin film. We have studied the dependence of hole concentration, surface morphology, and degree of polarity inversion for the inverted Ga-polar surface on the thickness of the inversion layer. We then use this approach to grow a light emitting diode structure which has the MQW active region grown on the advantageous N-polar surface and the p-layer grown on themore » inverted Ga-polar surface.« less

High Temperature Annealing of MBE-grown Mg-doped GaN

NASA Astrophysics Data System (ADS)

Contreras, S.; Konczewicz, L.; Peyre, H.; Juillaguet, S.; Khalfioui, M. Al; Matta, S.; Leroux, M.; Damilano, B.; Brault, J.

2017-06-01

In this report, are shown the results of high temperature resistivity and Hall Effect studies of Mg-doped GaN epilayers. The samples studied were grown on (0001) (c-plane) sapphire by molecular beam epitaxy and 0.5 μm GaN:Mg layers have been achieved on low temperature buffers of GaN (30 nm) and AlN ( 150 nm). The experiments were carried out in the temperature range from 300 K up to 900 K. Up to about 870 K a typical thermally activated conduction process has been observed with the activation energy value EA = 215 meV. However, for higher temperatures, an annealing effect is observed in all the investigated samples. The increase of the free carrier concentration as a function of time leads to an irreversible decrease of sample resistivity of more than 60%.

Enhanced characteristics of blue InGaN /GaN light-emitting diodes by using selective activation to modulate the lateral current spreading length

NASA Astrophysics Data System (ADS)

Lin, Ray-Ming; Lu, Yuan-Chieh; Chou, Yi-Lun; Chen, Guo-Hsing; Lin, Yung-Hsiang; Wu, Meng-Chyi

2008-06-01

We have studied the characteristics of blue InGaN /GaN multiquantum-well light-emitting diodes (LEDs) after reducing the length of the lateral current path through the transparent layer through formation of a peripheral high-resistance current-blocking region in the Mg-doped GaN layer. To study the mechanism of selective activation in the Mg-doped GaN layer, we deposited titanium (Ti), gold (Au), Ti /Au, silver, and copper individually onto the Mg-doped GaN layer and investigated their effects on the hole concentration in the p-GaN layer. The Mg-doped GaN layer capped with Ti effectively depressed the hole concentration in the p-GaN layer by over one order of magnitude relative to that of the as-grown layer. This may suggest that high resistive regions are formed by diffusion of Ti and depth of high resistive region from the p-GaN surface depends on the capped Ti film thickness. Selective activation of the Mg-doped GaN layer could be used to modulate the length of the lateral current path. Furthermore, the external quantum efficiency of the LEDs was improved significantly after reducing the lateral current spreading length. In our best result, the external quantum efficiency was 52.3% higher (at 100mA) than that of the as-grown blue LEDs.

Hafnium nitride buffer layers for growth of GaN on silicon

DOEpatents

Armitage, Robert D.; Weber, Eicke R.

2005-08-16

Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

Development of III-nitride semiconductors by molecular beam epitaxy and cluster beam epitaxy and fabrication of LEDs based on indium gallium nitride MQWs

NASA Astrophysics Data System (ADS)

Chen, Tai-Chou Papo

The family of III-Nitrides (the binaries InN, GaN, AIN, and their alloys) is one of the most important classes of semiconductor materials. Of the three, Indium Nitride (InN) and Aluminum Nitride (AIN) have been investigated much less than Gallium Nitride (GaN). However, both of these materials are important for optoelectronic infrared and ultraviolet devices. In particular, since InN was found recently to be a narrow gap semiconductor (Eg=0.7eV), its development should extend the applications of nitride semiconductors to the spectral region appropriate to fiber optics communication and photovoltaic applications. Similarly, the development of AIN should lead to deep UV light emitting diodes (LEDs). The first part of this work addresses the evaluation of structural, optical and transport properties of InN films grown by two different deposition methods. In one method, active nitrogen was produced in the form of nitrogen radicals by a radio frequency (RF) plasma-assisted source. In an alternative method, active nitrogen was produced in the form of clusters containing approximately 2000 nitrogen molecules. These clusters were produced by adiabatic expansion from high stagnation pressure through a narrow nozzle into vacuum. The clusters were singly or doubly ionized with positive charge by electron impact and accelerated up to approximately 20 to 25 KV prior to their disintegration on the substrate. Due to the high local temperature produced during the impact of clusters with the substrate, this method is suitable for the deposition of InN at very low temperatures. The films are auto-doped n-type with carrier concentrations varying from 3 x 1018 to 1020 cm-3 and the electron effective mass of these films was determined to be 0.09m0. The majority of the AIN films was grown by the cluster beam epitaxy method and was doped n- and p- type by incorporating silicon (Si) and magnesium (Mg) during the film deposition. All films were grown under Al-rich conditions at relatively high temperatures (800˜1050°C) in order to increase the solubility of nitrogen into the free Al on the surface of the growing film. The films were found to have smooth surface morphology with narrow on-axis X-ray diffraction (XRD) rocking curves and relatively broad off-axis XRD rocking curves attributed to the lack of a buffer layer during the film growth. The device aspect of this work involves the material formation and the device fabrication of Indium Gallium Nitride (InGaN) based LEDs on textured GaN templates produced spontaneously by either hydride vapor phase epitaxy (HVPE) or using a method of natural lithography and reactive ion etching. This part of the work includes the film deposition and characterization of InGaNJGaN quantum wells on smooth and textured GaN template.

Single n-GaN microwire/p-Silicon thin film heterojunction light-emitting diode.

PubMed

Ahn, Jaehui; Mastro, Michael A; Klein, Paul B; Hite, Jennifer K; Feigelson, Boris; Eddy, Charles R; Kim, Jihyun

2011-10-24

The emission and waveguiding properties of individual GaN microwires as well as devices based on an n-GaN microwire/p-Si (100) junction were studied for relevance in optoelectronics and optical circuits. Pulsed photoluminescence of the GaN microwire excited in the transverse or longitudinal direction demonstrated gain. These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto pre-patterned electrodes on a p-type Si (100) substrate. Electroluminescence from this p-n point junction was characteristic of a heterostructure light-emitting diode. Additionally, waveguiding was observed along the length of the microwire for light originating from photoluminescence as well as from electroluminescence generated at the p-n junction. © 2011 Optical Society of America

Characterization of nonpolar a-plane GaN epi-layers grown on high-density patterned r-plane sapphire substrates

NASA Astrophysics Data System (ADS)

Jinno, Daiki; Otsuki, Shunya; Sugimori, Shogo; Daicho, Hisayoshi; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

2018-02-01

To reduce the number of threading dislocations (TDs) in nonpolar a-plane GaN (a-GaN) epi-layers grown on flat r-plane sapphire substrates (r-FSS), we investigated the effects on the crystalline quality of the a-GaN epi-layers of high-density patterned r-plane sapphire substrates (r-HPSS), the patterns of which were placed at intervals of several hundred nanometers. Two types of r-HPSS, the patterns of which had diameters and heights on the order of several hundred nanometers (r-NHPSS) or several micrometers (r-MHPSS), were prepared with conventional r-FSS. The effect of these r-HPSS on the a-GaN epi-layers was demonstrated by evaluating the surface morphology and the crystalline quality of the epi-layers. The surfaces of the a-GaN epi-layer grown on r-FSS and r-NHPSS were pit-free and mirror-like, whereas the surface of the a-GaN epi-layer grown on r-MHPSS was very rough due to the large, irregular GaN islands that grew on the patterns, mainly at the initial growth stage. The crystalline quality of the a-GaN epi-layer grown on r-NHPSS was better than that of the a-GaN epi-layer grown on r-FSS. We confirmed that there were fewer TDs in the a-GaN epi-layer grown on r-NHPSS than there were in the a-GaN epi-layer grown on r-FSS. The TDs propagating to the surface in a-GaN epi-layer grown on r-NHPSS were mainly generated on the flat sapphire regions between the patterns. Interestingly, it was also found that the TDs that propagated to the surface concentrated with a periodic pitch along the c-axis direction. The TD densities of a-GaN epi-layers grown on r-FSS and r-NHPSS were estimated to be approximately 5.0 × 1010 and 1.5 × 109 cm-2, respectively. This knowledge will contribute to the further development of a-GaN epi-layers for high-performance devices.

Ideal Channel Field Effect Transistors

DTIC Science & Technology

2010-03-01

well as on /?-GaAs/w-GaAs homojunctions grown by molecular beam epitaxy (MBE). The diode I-Vs at reverse bias are plotted below. The measured breakdown...transistors and composite channel InAlAs/InGaAs/lnP/InAlAs high electron mobility transistors ( HEMTs ), which have taken the full advantage of the matched...result in a large number of dislocations in GaAs films epitaxially grown on wurtzite GaN. In this work, we have successfully integrated GaAs with GaN

Axial p-n junction and space charge limited current in single GaN nanowire.

PubMed

Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

2018-01-05

The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 10 17 at cm -3 assuming a donor level N d of 2-3 × 10 18 at cm -3 . The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

Axial p-n junction and space charge limited current in single GaN nanowire

NASA Astrophysics Data System (ADS)

Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

2018-01-01

The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 1017 at cm-3 assuming a donor level N d of 2-3 × 1018 at cm-3. The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

Integrated thin film Si fluorescence sensor coupled with a GaN microLED for microfluidic point-of-care testing

NASA Astrophysics Data System (ADS)

Robbins, Hannah; Sumitomo, Keiko; Tsujimura, Noriyuki; Kamei, Toshihiro

2018-02-01

An integrated fluorescence sensor consisting of a SiO2/Ta2O5 multilayer optical interference filter and hydrogenated amorphous silicon (a-Si:H) pin photodiode was coupled with a GaN microLED to construct a compact fluorescence detection module for point-of-care microfluidic biochemical analysis. The combination of the small size of the GaN microLED and asymmetric microlens resulted in a focal spot diameter of the excitation light of approximately 200 µm. The limit of detection of the sensor was as high as 36 nM for fluorescein solution flowing in a 100 µm deep microfluidic channel because of the lack of directionality of the LED light. Nevertheless, we used the GaN microLED coupled with the a-Si:H fluorescence sensor to successfully detect fluorescence from a streptavidin R-phycoerythrin conjugate that bound to biotinylated antibody-coated microbeads trapped by the barrier in the microfluidic channel.

The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

NASA Astrophysics Data System (ADS)

Chichibu, S. F.; Uedono, A.; Kojima, K.; Ikeda, H.; Fujito, K.; Takashima, S.; Edo, M.; Ueno, K.; Ishibashi, S.

2018-04-01

The nonradiative lifetime (τNR) of the near-band-edge emission in various quality GaN samples is compared with the results of positron annihilation measurement, in order to identify the origin and to determine the capture-cross-section of the major intrinsic nonradiative recombination centers (NRCs). The room-temperature τNR of various n-type GaN samples increased with decreasing the concentration of divacancies composed of a Ga vacancy (VGa) and a N vacancy (VN), namely, VGaVN. The τNR value also increased with increasing the diffusion length of positrons, which is almost proportional to the inverse third root of the gross concentration of all point defects. The results indicate that major intrinsic NRC in n-type GaN is VGaVN. From the relationship between its concentration and τNR, its hole capture-cross-section is estimated to be about 7 × 10-14 cm2. Different from the case of 4H-SiC, the major NRCs in p-type and n-type GaN are different: the major NRCs in Mg-doped p-type GaN epilayers are assigned to multiple vacancies containing a VGa and two (or three) VNs, namely, VGa(VN)n (n = 2 or 3). The ion-implanted Mg-doped GaN films are found to contain larger size vacancy complexes such as (VGa)3(VN)3. In analogy with GaN, major NRCs in Al0.6Ga0.4N alloys are assigned to vacancy complexes containing an Al vacancy or a VGa.

Probing exciton density of states through phonon-assisted emission in GaN epilayers: A and B exciton contributions

NASA Astrophysics Data System (ADS)

Cavigli, Lucia; Gabrieli, Riccardo; Gurioli, Massimo; Bogani, Franco; Feltin, Eric; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas; Vinattieri, Anna

2010-09-01

A detailed experimental investigation of the phonon-assisted emission in a high-quality c -plane GaN epilayer is presented up to 200 K. By performing photoluminescence and reflectivity measurements, we find important etaloning effects in the phonon-replica spectra, which have to be corrected before addressing the lineshape analysis. Direct experimental evidence for free exciton thermalization is found for the whole temperature range investigated. A close comparison with existing models for phonon replicas originating from a thermalized free exciton distribution shows that the simplified and commonly adopted description of the exciton-phonon interaction with a single excitonic band leads to a large discrepancy with experimental data. Only the consideration of the complex nature of the excitonic band in GaN, including A and B exciton contributions, allows accounting for the temperature dependence of the peak energy, intensity, and lineshape of the phonon replicas.

High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al{sub 1−x}In{sub x}N epilayers grown on a low defect density m-plane freestanding GaN substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chichibu, S. F., E-mail: chichibulab@yahoo.co.jp; Hazu, K.; Furusawa, K.

2014-12-07

Structural and optical qualities of half-a-μm-thick m-plane Al{sub 1−x}In{sub x}N epilayers grown by metalorganic vapor phase epitaxy were remarkably improved via coherent growth on a low defect density m-plane freestanding GaN substrate prepared by hydride vapor phase epitaxy. All the epilayers unexceptionally suffer from uniaxial or biaxial anisotropic in-plane stress. However, full-width at half-maximum values of the x-ray ω-rocking curves were nearly unchanged as the underlayer values being 80 ∼ 150 arc sec for (101{sup ¯}0) and (101{sup ¯}2) diffractions with both 〈0001〉 and 〈112{sup ¯}0〉 azimuths, as long as pseudomorphic structure was maintained. Such Al{sub 1−x}In{sub x}N epilayers commonly exhibited a broadmore » but predominant luminescence peak in ultraviolet (x ≤ 0.14) to green (x = 0.30) wavelengths. Its equivalent value of the internal quantum efficiency at room temperature was as high as 67% for x = 0.14 and 44% for x = 0.30. Because its high-energy cutoff commonly converged with the bandgap energy, the emission peak is assigned to originate from the extended near-band-edge states with strong carrier localization.« less

Growth of wide-bandgap nitride semiconductors by MBE

NASA Astrophysics Data System (ADS)

Moustakas, T. D.

2002-08-01

This paper reviews progress in the heteroepitaxial growth of Ill-Nitride semiconductors. The growth of wurtzite and zinc-blende allotropic forms of GaN on various substrates with hexagonal and cubic symmetry respectively were discussed. In particular we addressed the growth on the various faces of sapphire, 6H-SiC and (001) Si. It has been shown that the kinetics of growth by plasma-MBE or ammonia-MBE are different. Specifically, in plasma-assisted MBE smooth films are obtained under group-III rich conditions of growth. On the other hand in ammonia-MBE smooth films are obtained under nitrogen rich conditions of growth. High quality films were obtained on 6H-SiC without the employment of any buffer. The various nucleation steps used to improve the two dimensional growth as well as to control the film polarity were discussed. The n- and p-doping of GaN were addressed. The concept of increasing the solubility of Mg in GaN by simultaneously bombarding the surface of the growing film with a flux of electrons (co-doping GaN with Mg and electrons) was discussed. The influence of the strength of Al-N, Ga-N and In-N bonds on the kinetics of growth of nitride alloys was pointed out. Specifically, it was shown that in both the nitrogen-rich and group-III rich growth regimes, the incorporation probability of aluminum is unity for the investigated temperature range of 750-800° C. On the other hand the incorporation probability of gallium is constant but less than unity only in the nitrogen-rich regime of growth. In the group-III regime the incorporation probability of gallium decreases monotonically with the total group-III flux, due to the competition with aluminum for the available active nitrogen. Alloy phenomena such as phase separation and atomic ordering and the influence of these phenomena to the optical properties were addressed. InGaN alloys are thermodynamically unstable against phase separation. At compositions above 30% they tend to undergo partial phase separation. Furthermore, InGaN alloys were found to undergo 1x1 monolayer cation ordering. AlGaN alloys do not show evidence of phase separation but they were found to undergo multiple type of superlattice ordering. Under nitrogen-rich growth conditions they show one monolayer periodicity, while under group-III rich growth it was found that the structure is a superposition of a seven monolayer and twelve monolayer superlattices. Finally, the growth of heterostructures and MQWs and the use of the MBE method for the fabrication of optical, electronic and electromechanical devices were discussed.

Design and fabrication of single-crystal GaN nano-bridge on homogeneous substrate for nanoindentation

NASA Astrophysics Data System (ADS)

Hung, Shang-Chao

2014-12-01

This study reports a simple method to design and fabricate a freestanding GaN nano-bridge over a homogeneous short column as supporting leg. Test samples were fabricated from MOCVD-grown single-crystal GaN films over sapphire substrate using a FIB milling to leave freestanding short spans. We also investigated the nanoindentation characteristics and the corresponding nanoscopic mechanism of the GaN nano-bridge and its short column with a conical indenter inside transmission electron microscopy. The stress-strain mechanical properties and Young's modulus have also been examined and calculated as 108 GPa ± 4.8 % by the strain energy method. The significant slope switch of the L- D curve corresponds to the transition from the single-point bending indentation to the surface stretching indentation and has been interpreted with the evolution of TEM images. This freestanding fabrication and test have key advantages to characterize nanoscale behavior of one-dimensional bridge structure and greater ease of sample preparation over other micro-fabrication techniques.

Ab initio calculations on the initial stages of GaN and ZnO growth on lattice-matched ScAlMgO4 (0001) substrates

NASA Astrophysics Data System (ADS)

Guo, Yao; Wang, Yanfei; Li, Chengbo; Li, Xianchang; Niu, Yongsheng; Hou, Shaogang

2016-12-01

The initial stages of GaN and ZnO epitaxial growth on lattice-matched ScAlMgO4 substrates have been investigated by ab initio calculation. The geometrical parameters and electronic structure of ScAlMgO4 bulk and (0001) surface have been investigated by density-functional first-principles study. The effects of different surface terminations have been examined through surface energy and relaxation calculations. The O-Mg-O termination is more favorable than other terminations by comparing the calculated surface energies. It should be accepted as the appropriate surface structure in subsequent calculation. The initial stages of GaN and ZnO epitaxial growths are discussed based on the adsorption and diffusion of the adatoms on reconstructed ScAlMgO4 (0001) surface. According to theoretical characterizations, N adatom on the surface is more stable than Ga. O adatom is more favorable than Zn. These observations lead to the formation of GaN and ZnO epilayer and explain experimentally-confirmed in-plane alignment mechanisms of GaN and ZnO on ScAlMgO4 substrates. Furthermore, the polarity of GaN and ZnO surfaces on ScAlMgO4 (0001) at the initial growth stage have been explored by ab initio calculation. Theoretical studies indicate that the predominant growths of Ga-polar GaN and Zn-polar ZnO are determined by the initial growth stage.

Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study

NASA Astrophysics Data System (ADS)

Bläsing, J.; Krost, A.; Hertkorn, J.; Scholz, F.; Kirste, L.; Chuvilin, A.; Kaiser, U.

2009-02-01

This paper presents an x-ray study of GaN, which is grown on nominally undoped and oxygen-doped AlN nucleation layers on sapphire substrates by metal organic vapor phase epitaxy. Without additional oxygen doping a trimodal nucleation distribution of AlN is observed leading to inhomogeneous in-plane strain fields, whereas in oxygen-doped layers a homogeneous distribution of nucleation centers is observed. In both types of nucleation layers extremely sharp correlation peaks occur in transverse ω-scans which are attributed to a high density of edge-type dislocations having an in-plane Burgers vector. The correlation peaks are still visible in the (0002) ω-scans of 500 nm GaN which might mislead an observer to conclude incorrectly that there exists an extremely high structural quality. For the undoped nucleation layers depth-sensitive measurements in grazing incidence geometry reveal a strong thickness dependence of the lattice parameter a, whereas no such dependence is observed for doped samples. For oxygen-doped nucleation layers, in cross-sectional transmission electron microscopy images a high density of stacking faults parallel to the substrate surface is found in contrast to undoped nucleation layers where a high density of threading dislocations is visible. GaN of 2.5 μm grown on top of 25 nm AlN nucleation layers with an additional in situ SiN mask show full widths at half maximum of 160″ and 190″ in (0002) and (10-10) high-resolution x-ray diffraction ω-scans, respectively.

Piezo-Potential Generation in Capacitive Flexible Sensors Based on GaN Horizontal Wires.

PubMed

El Kacimi, Amine; Pauliac-Vaujour, Emmanuelle; Delléa, Olivier; Eymery, Joël

2018-06-12

We report an example of the realization of a flexible capacitive piezoelectric sensor based on the assembly of horizontal c¯-polar long Gallium nitride (GaN) wires grown by metal organic vapour phase epitaxy (MOVPE) with the Boostream ® technique spreading wires on a moving liquid before their transfer on large areas. The measured signal (<0.6 V) obtained by a punctual compression/release of the device shows a large variability attributed to the dimensions of the wires and their in-plane orientations. The cause of this variability and the general operating mechanisms of this flexible capacitive device are explained by finite element modelling simulations. This method allows considering the full device composed of a metal/dielectric/wires/dielectric/metal stacking. We first clarify the mechanisms involved in the piezo-potential generation by mapping the charge and piezo-potential in a single wire and studying the time-dependent evolution of this phenomenon. GaN wires have equivalent dipoles that generate a tension between metallic electrodes only when they have a non-zero in-plane projection. This is obtained in practice by the conical shape occurring spontaneously during the MOVPE growth. The optimal aspect ratio in terms of length and conicity (for the usual MOVPE wire diameter) is determined for a bending mechanical loading. It is suggested to use 60⁻120 µm long wires (i.e., growth time less than 1 h). To study further the role of these dipoles, we consider model systems with in-plane 1D and 2D regular arrays of horizontal wires. It is shown that a strong electrostatic coupling and screening occur between neighbouring horizontal wires depending on polarity and shape. This effect, highlighted here only from calculations, should be taken into account to improve device performance.

High-density convergent plasma sputtering device for a liquid metal target using an unheated glass plate

NASA Astrophysics Data System (ADS)

Motomura, T.; Tabaru, T.

2018-06-01

A high-density convergent plasma sputtering device has been developed for a liquid metal target, using an unheated glass plate. The convergent magnetic field lines, which are produced by an external solenoid coil and a permanent magnet positioned behind the liquid metal target, effectively transport high-density plasmas near the target. In this study, a liquid gallium target was sputtered with nitrogen plasmas, without additive gas required for depositing gallium nitride films on the unheated substrates. The deposition rate of the GaN film was estimated at ˜13 nm/min at a gas pressure of 0.2 Pa. A strong diffraction peak was observed along the GaN (002) axis, with the use of an unheated glass plate and a target-substrate distance of ˜45 mm.

Method of growing GaN films with a low density of structural defects using an interlayer

DOEpatents

Bourret-Courchesne, Edith D.

2003-01-01

A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the growth of an initial grown at high temperature. A description of the growth process is presented with characterization results aimed at understanding the mechanisms of reduction in dislocation density. A large percentage of the threading dislocations present in the first GaN epilayer are found to bend near the interlayer and do not propagate into the top layer which grows at higher temperature in a lateral growth mode. TEM studies show that the mechanisms of dislocation reduction are similar to those described for the epitaxial lateral overgrowth process, however a notable difference is the absence of coalescence boundaries.

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

NASA Astrophysics Data System (ADS)

Zúñiga-Pérez, Jesús; Consonni, Vincent; Lymperakis, Liverios; Kong, Xiang; Trampert, Achim; Fernández-Garrido, Sergio; Brandt, Oliver; Renevier, Hubert; Keller, Stacia; Hestroffer, Karine; Wagner, Markus R.; Reparaz, Juan Sebastián; Akyol, Fatih; Rajan, Siddharth; Rennesson, Stéphanie; Palacios, Tomás; Feuillet, Guy

2016-12-01

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence of a spontaneous electric polarization within these materials and their associated alloys (Ga,Al,In)N and (Zn,Mg,Cd)O. The polarity has also important consequences on the stability of the different crystallographic surfaces, and this becomes especially important when considering epitaxial growth. Furthermore, the internal polarization fields may adversely affect the properties of optoelectronic devices but is also used as a potential advantage for advanced electronic devices. In this article, polarity-related issues in GaN and ZnO are reviewed, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth. The necessary theoretical background is first introduced and the stability of the cation and anion polarity surfaces is discussed. For assessing the polarity, one has to make use of specific characterization methods, which are described in detail. Subsequently, the nucleation and growth mechanisms of thin films and nanostructures, including nanowires, are presented, reviewing the specific growth conditions that allow controlling the polarity of such objects. Eventually, the demonstrated and/or expected effects of polarity on the properties and performances of optoelectronic and electronic devices are reported. The present review is intended to yield an in-depth view of some of the hot topics related to polarity in GaN and ZnO, a fast growing subject over the last decade.

Ion implantation damage, annealing and dopant activation in epitaxial gallium nitride

NASA Astrophysics Data System (ADS)

Suvkhanov, Agajan

2001-07-01

Successful n- and p-doping of GaN is an extremely important technological problem. More recently, ion implantation has been used to achieve both n- and p-type GaN. The ion implantation process is accompanied by the presence of radiation defects as the result of the ion-solid interactions. The temperatures (above 1000°C) required for recovery of the implantation induced damage and dopant activation strongly affect the GaN's surface integrity due to the significant nitrogen vapor pressure. Preservation of the surface integrity of GaN during high temperature post-implantation annealing is one of the key issues in the fabrication of GaN-based light-emitting devices. The radiation damage build-up in the implanted GaN layers has been investigated as a function of ion dose and the substrate's temperature. Results of measurements of structural damage by the Rutherford backscattering/Channeling (RBS/C) and the spectroscopic ellipsometry (SE) techniques have demonstrated the complex nature of the damage build-up. Analysis of GaN implanted at high temperature has demonstrated the presence of competing processes of layer-by-layer damage build-up and defect annihilation. Using a capping layer and annealing in a sealed quartz capsule filled with dry nitrogen can preserve the integrity of the GaN's surface. In this work the ion-implanted GaN samples were capped with 40 run MOCVD (Metal Organic Chemical Vapor Deposition) grown AlN film prior to annealing. The results of this work showed the advantage of high-temperature annealing of implanted GaN in a quartz capsule with nitrogen ambient, as compared with annealing in argon and nitrogen gas flow. Partial to complete decomposition of the AlN cap and underlying GaN has been observed by RBS/C and SEM (Scanning electron microscopy) for the samples annealed in flowing argon, as well as for the samples processed in flowing nitrogen. Encapsulation with nitrogen overpressure prevented the decomposition of the AlN capping film and the GaN crystal, and made it possible to achieve optical activation of the implanted Mg + and Si+ ions. PL measurements at 16 K of GaN samples implanted with Mg+ and annealed in a capsule showed three relatively strong peaks at 211, 303, and 395 meV from the band-edge emission. The relative intensity of the "yellow" band emission (i.e. defect band) was several times lower in the case of annealing in a sealed capsule as compared to that of open anneals in flowing argon or nitrogen. A separate set of specially-grown GaN samples was used for low temperature (1.8 K) PL analysis of the activation properties of Mg+-implanted and Mg+/P+-implanted samples. The samples were annealed in Rapid thermal processor (RTP) at 1300°C for 10 s with AlON encapsulation in flowing N2. The Mg+ implants showed good optical activation, producing a dose-correlated acceptor bound exciton peak with 12.2 meV localization energy, and donor-to-acceptor and band-to-acceptor peaks at 3.270 and 3.284 eV, respectively. The spectroscopic Mg acceptor binding energy was found to be 224 meV. A broad peak at 2.35 eV is attributed to implantation-induced defects stable in p-type material.

Electrical and structural properties of (Pd/Au) Schottky contact to as grown and rapid thermally annealed GaN grown by MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nirwal, Varun Singh, E-mail: varun.nirwal30@gmail.com; Singh, Joginder; Gautam, Khyati

2016-05-06

We studied effect of thermally annealed GaN surface on the electrical and structural properties of (Pd/Au) Schottky contact to Ga-polar GaN grown by molecular beam epitaxy on Si substrate. Current voltage (I-V) measurement was used to study electrical properties while X-ray diffraction (XRD) measurement was used to study structural properties. The Schottky barrier height calculated using I-V characteristics was 0.59 eV for (Pd/Au) Schottky contact on as grown GaN, which increased to 0.73 eV for the Schottky contact fabricated on 700 °C annealed GaN film. The reverse bias leakage current at -1 V was also significantly reduced from 6.42×10{sup −5} Amore » to 7.31×10{sup −7} A after annealing. The value of series resistance (Rs) was extracted from Cheung method and the value of R{sub s} decreased from 373 Ω to 172 Ω after annealing. XRD results revealed the formation of gallide phases at the interface of (Pd/Au) and GaN for annealed sample, which could be the reason for improvement in the electrical properties of Schottky contact after annealing.« less

Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure

NASA Astrophysics Data System (ADS)

Zhao, Guijuan; Wang, Lianshan; Li, Huijie; Meng, Yulin; Li, Fangzheng; Yang, Shaoyan; Wang, Zhanguo

2018-01-01

Semi-polar (11-22) InGaN multiple quantum well (MQW) green light-emitting diode (LED) structures have been realized by metal-organic chemical vapor deposition on an m-plane sapphire substrate. By introducing double GaN buffer layers, we improve the crystal quality of semi-polar (11-22) GaN significantly. The vertical alignment of the diffraction peaks in the (11-22) X-ray reciprocal space mapping indicates the fully strained MQW on the GaN layer. The photoluminescence spectra of the LED structure show stronger emission intensity along the [1-100] InGaN/GaN direction. The electroluminescence emission of the LED structure is very broad with peaks around 550 nm and 510 nm at the 100 mA current injection for samples A and B, respectively, and exhibits a significant blue-shift with increasing drive current.

Measuring Nanoscale Heat Transfer for Gold-(Gallium Oxide)-Gallium Nitride Interfaces as a Function

NASA Astrophysics Data System (ADS)

Szwejkowski, Chester; Sun, Kai; Constantin, Costel; Giri, Ashutosh; Saltonstall, Christopher; Hopkins, Patrick; NanoSynCh Team; Exsite Team

2014-03-01

Gallium nitride (GaN) is considered the most important semiconductor after the discovery of Silicon. Understanding the properties of GaN is imperative in determining the utility and applicability of this class of materials to devices. We present results of time domain thermoreflectance (TDTR) measurements as a function of surface root mean square (RMS) roughness. We used commercially available 5mm x 5mm, single-side polished GaN (3-7 μm)/Sapphire (430 μm) substrates that have a Wurtzite crystal structure and are slightly n-type doped. The GaN substrates were annealed in the open atmosphere for 10 minutes (900-1000 °C). This high-temperature treatment produced RMS values from 1-60 nm and growth of gallium oxide (GaO) as measured with an atomic force microscopy and transmission electron microscopy respectively. A gold film (80nm) was deposited on the GaN surface using electron beam physical vapor deposition which was verified using ellipsometry and profilometry. The TDTR measurements suggest that the thermal conductivity decays exponentially with RMS roughness and that there is a minimum value for thermal boundary conductance at a roughness of 15nm.

Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures

NASA Astrophysics Data System (ADS)

Li, Junmei; Guo, Wei; Jiang, Jie'an; Gao, Pingqi; Bo, Baoxue; Ye, Jichun

2018-03-01

We report the fabrication of a NiO thin film on top of an n-type GaN epitaxial layer. The electron-blocking capability of NiO in a hybrid organic/inorganic heterostructure consisting of n-GaN/NiO/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is discussed. Surface morphology, crystallography orientation, bandgap, and fermi level information of NiO films were investigated in detail. A rectifying property consistent with the proposed band diagram was observed in the current-voltage measurement. Theoretical analysis also demonstrated the effective electron blocking due to band alignment and a more balanced carrier distribution inside the GaN region with NiO inserted into the n-GaN/PEDOT:PSS heterostructure. This work provides a promising approach to the fabrication of high-efficiency hybrid optoelectronic devices.

The Search for Effective p-Type Material in GaN-Based Devices: Past, Present, and Future

NASA Astrophysics Data System (ADS)

Juday, Reid; Fischer, Alec; Ponce, Fernando; Dupuis, Russell

2009-10-01

In the continued drive towards viable, large-scale solid state lighting, GaN and its alloys with In and Al have risen to the forefront of current research. Regardless of GaN's success in LEDs and laser diodes, certain technological obstacles have remained. Since the beginning of GaN fabrication, the ability to reliably and effectively create p-type material has been a major concern. Mg is the most widely used and successful acceptor in GaN and appears to behave even more favorably in InxGa1-xN with small values of x (< 0.1). It is commonly accepted, however, that Mg-H complexes form during growth, inhibiting hole formation. This talk will focus on comparing the techniques most commonly used to activate p-GaN, such as thermal annealing and low-energy electron beam irradiation in a scanning electron microscope, as well as the properties of low-indium content p-type InGaN thin films.

MOCVD Growth and Characterization of n-type Zinc Oxide Thin Films

NASA Astrophysics Data System (ADS)

Ben-Yaacov, Tammy

In the past decade, there has been widespread effort in the development of zinc oxide as a II-V1 semiconductor material. ZnO has potential advantages in optoelectronip device applications due to its unique electrical and optical properties. What stands out among these properties is its wide direct bandgap of 3.37 eV and its high electrical conductivity and transparency in the visible and near-UV regions of the spectrum. ZnO can be grown heteroepitaxially on GaN under near lattice-matched conditions and homoepitaxially as well, as high-quality bulk ZnO substrates are commercially available. This dissertation focuses on the development of the growth of high-quality, single crystal n-type ZnO films, control of n-type conductivity, as well as its application as a transparent contact material in GaN-based devices. The first part of this dissertation is an extensive heteroepitaxial and homoepitaxial growth study presenting the properties of ZnO(0001) layers grown on GaN(0001) templates and ZnO(0001) substrates. We show that deposition on GaN requires a two-step growth technique involving the growth of a low temperature nucleation layer before growing a high temperature epitaxial layer in order to obtain smooth ZnO films with excellent crystal quality and step-flow surface morphology. We obtained homoepitaxial ZnO(0001) films of structural quality and surface morphology that is comparable to the as-received substrates, and showed that a high growth temperature (≥1000°C) is needed in order to achieve step-flow growth mode. We performed n-type doping experiments, and established the conditions for which Indium effectively controls the n-type conductivity of ZnO films grown on GaN(0001) templates. A peak carrier concentration of 3.22x 10 19cm-3 and minimum sheet resistance of 97 O/square was achieved, while simultaneously maintaining good morphology and crystal quality. Finally, we present In-doped ZnO films implemented as p-contacts for GaN-based solar cells and LEDs, and we investigate the n-ZnO/p-GaN interface. We show that ZnO has potential as an effective p-contact for these devices, and determine properties that still need improvement in order for ZnO to compete with other contact materials. We also compare the device performance to metal-contacted devices. In summary, this thesis describes the growth of ZnO(0001) films by MOCVD, the progress in developing ZnO material with excellent surface morphology, high crystal quality, and controllable n-type doping, as well as its application to GaN-based optoelectronic devices as a p-contact material.

Influence of vacancy defect on surface feature and adsorption of Cs on GaN(0001) surface.

PubMed

Ji, Yanjun; Du, Yujie; Wang, Meishan

2014-01-01

The effects of Ga and N vacancy defect on the change in surface feature, work function, and characteristic of Cs adsorption on a (2 × 2) GaN(0001) surface have been investigated using density functional theory with a plane-wave ultrasoft pseudopotential method based on first-principles calculations. The covalent bonds gain strength for Ga vacancy defect, whereas they grow weak for N vacancy defect. The lower work function is achieved for Ga and N vacancy defect surfaces than intact surface. The most stable position of Cs adatom on Ga vacancy defect surface is at T1 site, whereas it is at B(Ga) site on N vacancy defect surface. The E(ads) of Cs on GaN(0001) vacancy defect surface increases compared with that of intact surface; this illustrates that the adsorption of Cs on intact surface is more stable.

Mechanical responses of a-axis GaN nanowires under axial loads

NASA Astrophysics Data System (ADS)

Wang, R. J.; Wang, C. Y.; Feng, Y. T.; Tang, Chun

2018-03-01

Gallium nitride (GaN) nanowires (NWs) hold technological significance as functional components in emergent nano-piezotronics. However, the examination of their mechanical responses, especially the mechanistic understanding of behavior beyond elasticity (at failure) remains limited due to the constraints of in situ experimentation. We therefore performed simulations of the molecular dynamics (MD) of the mechanical behavior of [1\\bar{2}10]-oriented GaN NWs subjected to tension or compression loading until failure. The mechanical properties and critical deformation processes are characterized in relation to NW sizes and loading conditions. Detailed examinations revealed that the failure mechanisms are size-dependent and controlled by the dislocation mobility on shuffle-set pyramidal planes. The size dependence of the elastic behavior is also examined in terms of the surface structure determined modification of Young’s modulus. In addition, a comparison with c-axis NWs is made to show how size-effect trends vary with the growth orientation of NWs.

Influence of Vacancy Defect on Surface Feature and Adsorption of Cs on GaN(0001) Surface

PubMed Central

Ji, Yanjun; Du, Yujie; Wang, Meishan

2014-01-01

The effects of Ga and N vacancy defect on the change in surface feature, work function, and characteristic of Cs adsorption on a (2 × 2) GaN(0001) surface have been investigated using density functional theory with a plane-wave ultrasoft pseudopotential method based on first-principles calculations. The covalent bonds gain strength for Ga vacancy defect, whereas they grow weak for N vacancy defect. The lower work function is achieved for Ga and N vacancy defect surfaces than intact surface. The most stable position of Cs adatom on Ga vacancy defect surface is at T1 site, whereas it is at BGa site on N vacancy defect surface. The E ads of Cs on GaN(0001) vacancy defect surface increases compared with that of intact surface; this illustrates that the adsorption of Cs on intact surface is more stable. PMID:25126599

Cubic nitride templates

DOEpatents

Burrell, Anthony K; McCleskey, Thomas Mark; Jia, Quanxi; Mueller, Alexander H; Luo, Hongmei

2013-04-30

A polymer-assisted deposition process for deposition of epitaxial cubic metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be used as templates for the development of high quality cubic GaN based electronic devices.

High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kyle, Erin C. H., E-mail: erinkyle@umail.ucsb.edu; Kaun, Stephen W.; Burke, Peter G.

2014-05-21

The dependence of electron mobility on growth conditions and threading dislocation density (TDD) was studied for n{sup −}-GaN layers grown by ammonia-based molecular beam epitaxy. Electron mobility was found to strongly depend on TDD, growth temperature, and Si-doping concentration. Temperature-dependent Hall data were fit to established transport and charge-balance equations. Dislocation scattering was analyzed over a wide range of TDDs (∼2 × 10{sup 6} cm{sup −2} to ∼2 × 10{sup 10} cm{sup −2}) on GaN films grown under similar conditions. A correlation between TDD and fitted acceptor states was observed, corresponding to an acceptor state for almost every c lattice translation along each threading dislocation. Optimizedmore » GaN growth on free-standing GaN templates with a low TDD (∼2 × 10{sup 6} cm{sup −2}) resulted in electron mobilities of 1265 cm{sup 2}/Vs at 296 K and 3327 cm{sup 2}/Vs at 113 K.« less

Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001)

NASA Astrophysics Data System (ADS)

Mula, Guido; Adelmann, C.; Moehl, S.; Oullier, J.; Daudin, B.

2001-11-01

We study the adsorption of Ga on (0001) GaN surfaces by reflection high-energy electron diffraction. It is shown that a dynamically stable Ga bilayer can be formed on the GaN surface for appropriate Ga fluxes and substrate temperatures. The influence of the presence of this Ga film on the growth mode of GaN on AlN(0001) by plasma-assisted molecular-beam epitaxy is studied. It is demonstrated that under nearly stoichiometric and N-rich conditions, the GaN layer relaxes elastically during the first stages of epitaxy. At high temperatures the growth follows a Stranski-Krastanov mode, whereas at lower temperatures kinetically formed flat platelets are observed. Under Ga-rich conditions-where a Ga bilayer is rapidly formed due to excess Ga accumulating on the surface-the growth follows a Frank-van der Merwe layer-by-layer mode at any growth temperature and no initial elastic relaxation occurs. Hence, it is concluded that excess Ga acts as a surfactant, effectively suppressing both Stranski-Krastanov islanding and platelet formation. It is further demonstrated that the Stranski-Krastanov transition is in competition with elastic relaxation by platelets, and it is only observed when relaxation by platelets is inefficient. As a result, a growth mode phase diagram is outlined for the growth of GaN on AlN(0001).

Power-Combined GaN Amplifier with 2.28-W Output Power at 87 GHz

NASA Technical Reports Server (NTRS)

Fung, King Man; Ward, John; Chattopadhyay, Goutam; Lin, Robert H.; Samoska, Lorene A.; Kangaslahti, Pekka P.; Mehdi, Imran; Lambrigtsen, Bjorn H.; Goldsmith, Paul F.; Soria, Mary M.;

Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy

NASA Astrophysics Data System (ADS)

Hamachi, T.; Takeuchi, S.; Tohei, T.; Imanishi, M.; Imade, M.; Mori, Y.; Sakai, A.

2018-04-01

The mechanisms associated with electrical conduction through individual threading dislocations (TDs) in a Na-flux GaN crystal grown with a multipoint-seed-GaN technique were investigated by conductive atomic force microscopy (C-AFM). To focus on individual TDs, dislocation-related etch pits (DREPs) were formed on the Na-flux GaN surface by wet chemical etching, after which microscopic Pt electrodes were locally fabricated on the DREPs to form conformal contacts to the Na-flux GaN crystal, using electron beam assisted deposition. The C-AFM data clearly demonstrate that the leakage current flows through the individual TD sites. It is also evident that the leakage current and the electrical conduction mechanism vary significantly based on the area within the Na-flux GaN crystal where the TDs are formed. These regions include the c-growth sector (cGS) in which the GaN grows in the [0001 ] direction on top of the point-seed with a c-plane growth front, the facet-growth sector (FGS) in which the GaN grows with {10 1 ¯ 1 } facets on the side of the cGS, the boundary region between the cGS and FGS (BR), and the coalescence boundary region between FGSs (CBR). The local current-voltage (I-V) characteristics of the specimen demonstrate space charge limited current conduction and conduction related to band-like trap states associated with TDs in the FGS, BR, and CBR. A detailed analysis of the I-V data indicates that the electrical conduction through TDs in the cGS may proceed via the Poole-Frenkel emission mechanism.

Optical waveguiding properties into porous gallium nitride structures investigated by prism coupling technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alshehri, Bandar; Dogheche, Elhadj, E-mail: elhadj.dogheche@univ-valenciennes.fr; Lee, Seung-Min

2014-08-04

In order to modulate the refractive index and the birefringence of Gallium Nitride (GaN), we have developed a chemical etching method to perform porous structures. The aim of this research is to demonstrate that optical properties of GaN can be tuned by controlling the pores density. GaN films are prepared on sapphire by metal organic chemical vapor deposition and the microstructure is characterized by transmission electron microscopy, and scanning electron microscope analysis. Optical waveguide experiment is demonstrated here to determine the key properties as the ordinary (n{sub 0}) and extraordinary (n{sub e}) refractive indices of etched structures. We report heremore » the dispersion of refractive index for porous GaN and compare it to the bulk material. We observe that the refractive index decreases when the porous density p is increased: results obtained at 0.975 μm have shown that the ordinary index n{sub 0} is 2.293 for a bulk layer and n{sub 0} is 2.285 for a pores density of 20%. This value corresponds to GaN layer with a pore size of 30 nm and inter-distance of 100 nm. The control of the refractive index into GaN is therefore fundamental for the design of active and passive optical devices.« less

High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

McSkimming, Brian M., E-mail: mcskimming@engineering.ucsb.edu; Speck, James S.; Chaix, Catherine

2015-09-15

In the present study, the authors report on a modified Riber radio frequency (RF) nitrogen plasma source that provides active nitrogen fluxes more than 30 times higher than those commonly used for plasma assisted molecular beam epitaxy (PAMBE) growth of gallium nitride (GaN) and thus a significantly higher growth rate than has been previously reported. GaN films were grown using N{sub 2} gas flow rates between 5 and 25 sccm while varying the plasma source's RF forward power from 200 to 600 W. The highest growth rate, and therefore the highest active nitrogen flux, achieved was ∼7.6 μm/h. For optimized growth conditions,more » the surfaces displayed a clear step-terrace structure with an average RMS roughness (3 × 3 μm) on the order of 1 nm. Secondary ion mass spectroscopy impurity analysis demonstrates oxygen and hydrogen incorporation of 1 × 10{sup 16} and ∼5 × 10{sup 17}, respectively. In addition, the authors have achieved PAMBE growth of GaN at a substrate temperature more than 150 °C greater than our standard Ga rich GaN growth regime and ∼100 °C greater than any previously reported PAMBE growth of GaN. This growth temperature corresponds to GaN decomposition in vacuum of more than 20 nm/min; a regime previously unattainable with conventional nitrogen plasma sources. Arrhenius analysis of the decomposition rate shows that samples with a flux ratio below stoichiometry have an activation energy greater than decomposition of GaN in vacuum while samples grown at or above stoichiometry have decreased activation energy. The activation energy of decomposition for GaN in vacuum was previously determined to be ∼3.1 eV. For a Ga/N flux ratio of ∼1.5, this activation energy was found to be ∼2.8 eV, while for a Ga/N flux ratio of ∼0.5, it was found to be ∼7.9 eV.« less

Method For Growth of Crystal Surfaces and Growth of Heteroepitaxial Single Crystal Films Thereon

NASA Technical Reports Server (NTRS)

Powell, J. Anthony (Inventor); Larkin, David J. (Inventor); Neudeck, Philip G. (Inventor); Matus, Lawrence G. (Inventor)

2000-01-01

A method of growing atomically-flat surfaces and high quality low-defect crystal films of semiconductor materials and fabricating improved devices thereon is discussed. The method is also suitable for growing films heteroepitaxially on substrates that are different than the film. The method is particularly suited for growth of elemental semiconductors (such as Si), compounds of Groups III and V elements of the Periodic Table (such as GaN), and compounds and alloys of Group IV elements of the Periodic Table (such as SiC).

Optical losses in p-type layers of GaN ridge waveguides in the IR region

NASA Astrophysics Data System (ADS)

Westreich, Ohad; Katz, Moti; Atar, Gil; Paltiel, Yossi; Sicron, Noam

2017-07-01

Optical losses in c-plane (0001) GaN ridge waveguides, containing Mg-doped layers, were measured at 1064 nm, using the Fabry-Perot method. The losses increase linearly with the modal content of the p-layer, indicating that the absorption in these waveguides is dominated by p-layer absorption. The p-layer absorption is strongly anisotropic with E⊥c losses 4 times higher than E∥c. The absorption is temperature independent between 10 °C and 60 °C, supporting the possibility that it is related to Mg-bound holes.

GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors

NASA Astrophysics Data System (ADS)

Yu, Feng; Yao, Shengbo; Römer, Friedhard; Witzigmann, Bernd; Schimpke, Tilman; Strassburg, Martin; Bakin, Andrey; Schumacher, Hans Werner; Peiner, Erwin; Suryo Wasisto, Hutomo; Waag, Andreas

2017-03-01

Vertically aligned gallium nitride (GaN) nanowire (NW) arrays have attracted a lot of attention because of their potential for novel devices in the fields of optoelectronics and nanoelectronics. In this work, GaN NW arrays have been designed and fabricated by combining suitable nanomachining processes including dry and wet etching. After inductively coupled plasma dry reactive ion etching, the GaN NWs are subsequently treated in wet chemical etching using AZ400K developer (i.e., with an activation energy of 0.69 ± 0.02 eV and a Cr mask) to form hexagonal and smooth a-plane sidewalls. Etching experiments using potassium hydroxide (KOH) water solution reveal that the sidewall orientation preference depends on etchant concentration. A model concerning surface bonding configuration on crystallography facets has been proposed to understand the anisotropic wet etching mechanism. Finally, NW array-based vertical field-effect transistors with wrap-gated structure have been fabricated. A device composed of 99 NWs exhibits enhancement mode operation with a threshold voltage of 1.5 V, a superior electrostatic control, and a high current output of >10 mA, which prevail potential applications in next-generation power switches and high-temperature digital circuits.

GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors.

PubMed

Yu, Feng; Yao, Shengbo; Römer, Friedhard; Witzigmann, Bernd; Schimpke, Tilman; Strassburg, Martin; Bakin, Andrey; Schumacher, Hans Werner; Peiner, Erwin; Wasisto, Hutomo Suryo; Waag, Andreas

2017-03-03

Vertically aligned gallium nitride (GaN) nanowire (NW) arrays have attracted a lot of attention because of their potential for novel devices in the fields of optoelectronics and nanoelectronics. In this work, GaN NW arrays have been designed and fabricated by combining suitable nanomachining processes including dry and wet etching. After inductively coupled plasma dry reactive ion etching, the GaN NWs are subsequently treated in wet chemical etching using AZ400K developer (i.e., with an activation energy of 0.69 ± 0.02 eV and a Cr mask) to form hexagonal and smooth a-plane sidewalls. Etching experiments using potassium hydroxide (KOH) water solution reveal that the sidewall orientation preference depends on etchant concentration. A model concerning surface bonding configuration on crystallography facets has been proposed to understand the anisotropic wet etching mechanism. Finally, NW array-based vertical field-effect transistors with wrap-gated structure have been fabricated. A device composed of 99 NWs exhibits enhancement mode operation with a threshold voltage of 1.5 V, a superior electrostatic control, and a high current output of >10 mA, which prevail potential applications in next-generation power switches and high-temperature digital circuits.

Phase transformation of molecular beam epitaxy-grown nanometer-thick Gd₂O₃ and Y₂O₃ on GaN.

PubMed

Chang, Wen-Hsin; Wu, Shao-Yun; Lee, Chih-Hsun; Lai, Te-Yang; Lee, Yi-Jun; Chang, Pen; Hsu, Chia-Hung; Huang, Tsung-Shiew; Kwo, J Raynien; Hong, Minghwei

2013-02-01

High quality nanometer-thick Gd₂O₃ and Y₂O₃ (rare-earth oxide, R₂O₃) films have been epitaxially grown on GaN (0001) substrate by molecular beam epitaxy (MBE). The R₂O₃ epi-layers exhibit remarkable thermal stability at 1100 °C, uniformity, and highly structural perfection. Structural investigation was carried out by in situ reflection high energy electron diffraction (RHEED) and ex-situ X-ray diffraction (XRD) with synchrotron radiation. In the initial stage of epitaxial growth, the R₂O₃ layers have a hexagonal phase with the epitaxial relationship of R₂O₃ (0001)(H)<1120>(H)//GaN(0001)(H)<1120>(H). With the increase in R₂O₃ film thickness, the structure of the R₂O₃ films changes from single domain hexagonal phase to monoclinic phase with six different rotational domains, following the R₂O₃ (201)(M)[020](M)//GaN(0001)(H)<1120>(H) orientational relationship. The structural details and fingerprints of hexagonal and monoclinic phase Gd₂O₃ films have also been examined by using electron energy loss spectroscopy (EELS). Approximate 3-4 nm is the critical thickness for the structural phase transition depending on the composing rare earth element.

Metalorganic chemical vapor deposition of gallium nitride on sacrificial substrates

NASA Astrophysics Data System (ADS)

Fenwick, William Edward

GaN-based light emitting diodes (LEDs) face several challenges if the technology is to continue to make a significant impact in general illumination, and on technology that has become known as solid state lighting (SSL). Two of the most pressing challenges for the continued penetration of SSL into traditional lighting applications are efficacy and total lumens from the device, and their related cost. The development of alternative substrate technologies is a promising avenue toward addressing both of these challenges, as both GaN-based device technology and the associated metalorganic chemical vapor deposition (MOCVD) technology are already relatively mature technologies with a well-understood cost base. Zinc oxide (ZnO) and silicon (Si) are among the most promising alternative substrates for GaN epitaxy. These substrates offer the ability to access both higher efficacy and lumen devices (ZnO) at a much reduced cost. This work focuses on the development of MOCVD growth processes to yield high quality GaN-based materials and devices on both ZnO and Si. ZnO is a promising substrate for growth of low defect-density GaN because of its similar lattice constant and thermal expansion coefficient. The major hurdles for GaN growth on ZnO are the instability of the substrate in a hydrogen atmosphere, which is typical of nitride growth conditions, and the inter-diffusion of zinc and oxygen from the substrate into the GaN-based epitaxial layer. A process was developed for the MOCVD growth of GaN and InxGa 1-xN on ZnO that attempted to address these issues. The structural and optical properties of these films were studied using various techniques. X-ray diffraction (XRD) showed the growth of wurtzite GaN on ZnO, and room-temperature photoluminescence (RT-PL) showed near band-edge luminescence from the GaN and InxGa1-xN layers. However, high zinc and oxygen concentrations due to interdiffusion near the ZnO substrate remained an issue; therefore, the diffusion of zinc and oxygen into the subsequent GaN layer was studied in more detail. Several approaches were investigated---for example, transition layers such as Al2O3 and Al xGa1-xN/GaN---to minimize diffusion of these impurities into the GaN layer. Silicon, due to its prevalence, is the most promising material for the development of an inexpensive, large-area substrate technology. The challenge in MOCVD growth of GaN on Si is the tensile strain induced by the lattice and thermal mismatch between GaN and Si and the formation of anti-phase boundaries. Typical approaches to solve these problems involve complicated and multiple buffer layer structures, which lead to relatively slow growth rates. In this work, a thin atomic layer deposition (ALD)-grown Al2O3 interlayer was employed to relieve strain and increase material quality while also simplifying the growth process. While some residual strain was still observed in the GaN material by XRD and PL, the use of this oxide interlayer leads to an improvement in thin film quality as seen by a reduction in both crack density (<1 mm-2) on ALD-Al2O3/Si) and screw dislocation density (from 3x109cm-2 on bare Si to 2x108cm-2 on ALD-Al 2O3/Si) in the GaN films. A side-by-side comparison of GaN-based multiple quantum well LEDs grown on sapphire and on Al2O3/Si shows similar performance characteristic for both device structures. A redshift in peak emission wavelength was also observed on silicon compared to sapphire, and this is attributed to higher indium content due to the slight tensile strain in the layers on silicon. IQE of the devices on silicon is ˜32% as measured by LT-PL, compared to ˜37% on sapphire, but this difference can be assigned to the difference in indium compositions. These results show a great promise toward an inexpensive, large-area, silicon-based substrate technology for MOCVD growth of the next generation of GaN-based optoelectronic devices for SSL and other applications.

Thermal quenching effect of an infrared deep level in Mg-doped p-type GaN films

NASA Astrophysics Data System (ADS)

Kim, Keunjoo; Chung, Sang Jo

2002-03-01

The thermal quenching of an infrared deep level of 1.2-1.5 eV has been investigated on Mg-doped p-type GaN films, using one- and two-step annealing processes and photocurrent measurements. The deep level appeared in the one-step annealing process at a relatively high temperature of 900 °C, but disappeared in the two-step annealing process with a low-temperature step and a subsequent high-temperature step. The persistent photocurrent was residual in the sample including the deep level, while it was terminated in the sample without the deep level. This indicates that the deep level is a neutral hole center located above a quasi-Fermi level, estimated with an energy of EpF=0.1-0.15 eV above the valence band at a hole carrier concentration of 2.0-2.5×1017/cm3.

Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers

PubMed Central

2015-01-01

Non- and semipolar GaN have great potential to improve the efficiency of light emitting devices due to much reduced internal electric fields. However, heteroepitaxial GaN growth in these crystal orientations suffers from very high dislocation and stacking faults densities. Here, we report a facile method to obtain low defect density non- and semipolar heteroepitaxial GaN via selective area epitaxy using self-assembled multilayers of silica nanospheres (MSN). Nonpolar (11–20) and semipolar (11–22) GaN layers with high crystal quality have been achieved by epitaxial integration of the MSN and a simple one-step overgrowth process, by which both dislocation and basal plane stacking fault densities can be significantly reduced. The underlying defect reduction mechanisms include epitaxial growth through the MSN covered template, island nucleation via nanogaps in the MSN, and lateral overgrowth and coalescence above the MSN. InGaN/GaN multiple quantum wells structures grown on a nonpolar GaN/MSN template show more than 30-fold increase in the luminescence intensity compared to a control sample without the MSN. This self-assembled MSN technique provides a new platform for epitaxial growth of nitride semiconductors and offers unique opportunities for improving the material quality of GaN grown on other orientations and foreign substrates or heteroepitaxial growth of other lattice-mismatched materials. PMID:27065755

Polariton Bose–Einstein condensate at room temperature in an Al(Ga)N nanowire–dielectric microcavity with a spatial potential trap

PubMed Central

Das, Ayan; Bhattacharya, Pallab; Heo, Junseok; Banerjee, Animesh; Guo, Wei

2013-01-01

A spatial potential trap is formed in a 6.0-μm Al(Ga)N nanowire by varying the Al composition along its length during epitaxial growth. The polariton emission characteristics of a dielectric microcavity with the single nanowire embedded in-plane have been studied at room temperature. Excitation is provided at the Al(Ga)N end of the nanowire, and polariton emission is observed from the lowest bandgap GaN region within the potential trap. Comparison of the results with those measured in an identical microcavity with a uniform GaN nanowire and having an identical exciton–photon detuning suggests evaporative cooling of the polaritons as they are transported into the trap in the Al(Ga)N nanowire. Measurement of the spectral characteristics of the polariton emission, their momentum distribution, first-order spatial coherence, and time-resolved measurements of polariton cooling provides strong evidence of the formation of a near-equilibrium Bose–Einstein condensate in the GaN region of the nanowire at room temperature. In contrast, the condensate formed in the uniform GaN nanowire–dielectric microcavity without the spatial potential trap is only in self-equilibrium. PMID:23382183

Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lupina, L.; Zoellner, M. H.; Dietrich, B.

2015-11-16

We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} buffer system a very promising template for the growth of high quality GaN layers on silicon.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elhadj, Selim; Yoo, Jae-hyuck; Negres, Raluca A.

The optical damage performance of electrically conductive gallium nitride (GaN) and indium tin oxide (ITO) films is addressed using large area, high power laser beam exposures at 1064 nm sub-bandgap wavelength. Analysis of the laser damage process assumes that onset of damage (threshold) is determined by the absorption and heating of a nanoscale region of a characteristic size reaching a critical temperature. We use this model to rationalize semi-quantitatively the pulse width scaling of the damage threshold from picosecond to nanosecond timescales, along with the pulse width dependence of the damage threshold probability derived by fitting large beam damage densitymore » data. Multi-shot exposures were used to address lifetime performance degradation described by an empirical expression based on the single exposure damage model. A damage threshold degradation of at least 50% was observed for both materials. Overall, the GaN films tested had 5-10 × higher optical damage thresholds than the ITO films tested for comparable transmission and electrical conductivity. This route to optically robust, large aperture transparent electrodes and power optoelectronics may thus involve use of next generation widegap semiconductors such as GaN.« less

Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun

Here, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on sapphire substrates, using ZrTi buffer layers to provide in-plane lattice-matching to hexagonal GaN. X-ray diffraction (XRD) as well as cross-section transmission electron microscopy (TEM) were used to assess the quality of the HEMT structure. The XRD 2θ scans showed full-width-at-half-maximum values of 0.16°, 0.07°, and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM studies of the GaN buffer layer and the AlN/ZrTi/AlN stack showed the importance of growing thin AlN buffer layers on the ZrTi layer prior to growth of the GaN buffermore » layer. The density of threading dislocations in the GaN channel layer of the HEMT structure was estimated to be in the 10 8 cm –2 range. The HEMT device exhibited a saturation drain current density of 820 mA/mm, and the channel of the fabricated HEMTs could be well modulated. A cutoff frequency (f T) of 8.9 GHz and a maximum frequency of oscillation (f max) of 17.3 GHz were achieved for HEMTs with gate dimensions of 1 × 200 μm.« less

Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

DOE PAGES

Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun; ...

2016-09-21

Here, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on sapphire substrates, using ZrTi buffer layers to provide in-plane lattice-matching to hexagonal GaN. X-ray diffraction (XRD) as well as cross-section transmission electron microscopy (TEM) were used to assess the quality of the HEMT structure. The XRD 2θ scans showed full-width-at-half-maximum values of 0.16°, 0.07°, and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM studies of the GaN buffer layer and the AlN/ZrTi/AlN stack showed the importance of growing thin AlN buffer layers on the ZrTi layer prior to growth of the GaN buffermore » layer. The density of threading dislocations in the GaN channel layer of the HEMT structure was estimated to be in the 10 8 cm –2 range. The HEMT device exhibited a saturation drain current density of 820 mA/mm, and the channel of the fabricated HEMTs could be well modulated. A cutoff frequency (f T) of 8.9 GHz and a maximum frequency of oscillation (f max) of 17.3 GHz were achieved for HEMTs with gate dimensions of 1 × 200 μm.« less

A Stillinger-Weber Potential for InGaN

DOE PAGES

Zhou, X. W.; Jones, R. E.

2017-09-27

Reducing defects in InGaN films deposited on GaN substrates has been critical to fill the “green” gap for solid-state lighting applications. To enable researchers to use molecular dynamics vapor deposition simulations to explores ways to reduce defects in InGaN films, we have developed and characterized a Stillinger-Weber potential for InGaN. We show that this potential reproduces the experimental atomic volume, cohesive energy, and bulk modulus of the equilibrium wurtzite / zinc-blende phases of both InN and GaN. Most importantly, the potential captures the stability of the correct phase of InGaN compounds against a variety of other elemental, alloy, and compoundmore » configurations. Lastly, this is validated by the potential’s ability to predict crystalline growth of stoichiometric wurtzite and zinc-blende In xGa 1-xN compounds during vapor deposition simulations where adatoms are randomly injected to the growth surface.« less

Highly mismatched GaN1-x Sb x alloys: synthesis, structure and electronic properties

NASA Astrophysics Data System (ADS)

Yu, K. M.; Sarney, W. L.; Novikov, S. V.; Segercrantz, N.; Ting, M.; Shaw, M.; Svensson, S. P.; Martin, R. W.; Walukiewicz, W.; Foxon, C. T.

2016-08-01

Highly mismatched alloys (HMAs) is a class of semiconductor alloys whose constituents are distinctly different in terms of size, ionicity and/or electronegativity. Electronic properties of the alloys deviate significantly from an interpolation scheme based on small deviations from the virtual crystal approximation. Most of the HMAs were only studied in a dilute composition limit. Recent advances in understanding of the semiconductor synthesis processes allowed growth of thin films of HMAs under non-equilibrium conditions. Thus reducing the growth temperature allowed synthesis of group III-N-V HMAs over almost the entire composition range. This paper focuses on the GaN x Sb1-x HMA which has been suggested as a potential material for solar water dissociation devices. Here we review our recent work on the synthesis, structural and optical characterization of GaN1-x Sb x HMA. Theoretical modeling studies on its electronic structure based on the band anticrossing (BAC) model are also reviewed. In particular we discuss the effects of growth temperature, Ga flux and Sb flux on the incorporation of Sb, film microstructure and optical properties of the alloys. Results obtained from two separate MBE growths are directly compared. Our work demonstrates that a large range of direct bandgap energies from 3.4 eV to below 1.0 eV can be achieved for this alloy grown at low temperature. We show that the electronic band structure of GaN1-x Sb x HMA over the entire composition range is well described by a modified BAC model which includes the dependence of the host matrix band edges as well as the BAC model coupling parameters on composition. We emphasize that the modified BAC model of the electronic band structure developed for the full composition of GaN x Sb1-x is general and is applicable to any HMA.

The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study.

PubMed

Kuchuk, Andrian V; Kryvyi, Serhii; Lytvyn, Petro M; Li, Shibin; Kladko, Vasyl P; Ware, Morgan E; Mazur, Yuriy I; Safryuk, Nadiia V; Stanchu, Hryhorii V; Belyaev, Alexander E; Salamo, Gregory J

2016-12-01

Superlattices (SLs) consisting of symmetric layers of GaN and AlN have been investigated. Detailed X-ray diffraction and reflectivity measurements demonstrate that the relaxation of built-up strain in the films generally increases with an increasing number of repetitions; however, an apparent relaxation for subcritical thickness SLs is explained through the accumulation of Nagai tilt at each interface of the SL. Additional atomic force microscopy measurements reveal surface pit densities which appear to correlate with the amount of residual strain in the films along with the appearance of cracks for SLs which have exceeded the critical thickness for plastic relaxation. These results indicate a total SL thickness beyond which growth may be limited for the formation of high-quality coherent crystal structures; however, they may indicate a growth window for the reduction of threading dislocations by controlled relaxation of the epilayers.

Fabrication of WS2/GaN p-n Junction by Wafer-Scale WS2 Thin Film Transfer

PubMed Central

Yu, Yang; Fong, Patrick W. K.; Wang, Shifeng; Surya, Charles

2016-01-01

High quality wafer-scale free-standing WS2 grown by van der Waals rheotaxy (vdWR) using Ni as a texture promoting layer is reported. The microstructure of vdWR grown WS2 was significantly modified from mixture of crystallites with their c-axes both parallel to (type I) and perpendicular to (type II) the substrate to large type II crystallites. Wafer-scale transfer of vdWR grown WS2 onto different substrates by an etching-free technique was demonstrated for the first time that utilized the hydrophobic property of WS2 and hydrophilic property of sapphire. Our results show that vdWR is a reliable technique to obtain type-II textured crystallites in WS2, which is the key factor for the wafer-scale etching-free transfer. The transferred films were found to be free of observable wrinkles, cracks, or polymer residues. High quality p-n junctions fabricated by room-temperature transfer of the p-type WS2 onto an n-type GaN was demonstrated with a small leakage current density of 29.6 μA/cm2 at −1 V which shows superior performances compared to the directly grown WS2/GaN heterojunctions. PMID:27897210

Fabrication of WS2/GaN p-n Junction by Wafer-Scale WS2 Thin Film Transfer.

PubMed

Yu, Yang; Fong, Patrick W K; Wang, Shifeng; Surya, Charles

2016-11-29

High quality wafer-scale free-standing WS 2 grown by van der Waals rheotaxy (vdWR) using Ni as a texture promoting layer is reported. The microstructure of vdWR grown WS 2 was significantly modified from mixture of crystallites with their c-axes both parallel to (type I) and perpendicular to (type II) the substrate to large type II crystallites. Wafer-scale transfer of vdWR grown WS 2 onto different substrates by an etching-free technique was demonstrated for the first time that utilized the hydrophobic property of WS 2 and hydrophilic property of sapphire. Our results show that vdWR is a reliable technique to obtain type-II textured crystallites in WS 2 , which is the key factor for the wafer-scale etching-free transfer. The transferred films were found to be free of observable wrinkles, cracks, or polymer residues. High quality p-n junctions fabricated by room-temperature transfer of the p-type WS 2 onto an n-type GaN was demonstrated with a small leakage current density of 29.6 μA/cm 2 at -1 V which shows superior performances compared to the directly grown WS 2 /GaN heterojunctions.

Reduced-droop green III-nitride light-emitting diodes utilizing GaN tunnel junction

NASA Astrophysics Data System (ADS)

Alhassan, Abdullah I.; Young, Erin C.; Alyamani, Ahmed Y.; Albadri, Abdulrahman; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.

2018-04-01

We report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.

Structural investigations of GaN grown by low-pressure chemical vapor deposition on 6H{endash}SiC and Al{sub 2}O{sub 3} from GaCl{sub 3} and NH{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koynov, S.; Topf, M.; Fischer, S.

1997-08-01

GaN films grown on (0001) 6H{endash}SiC and (0001) Al{sub 2}O{sub 3} substrates using low-pressure chemical vapor deposition with GaCl{sub 3} and NH{sub 3} as precursors are comparatively explored by optical, scanning tunneling, and transmission electron microscopy. Independent of the substrate material used, the surface of the GaN layers is covered by hexagonally shaped islands. For GaN on 6H{endash}SiC, the islands are larger in diameter ({approx}50 {mu}m) and rather uniformly distributed. An atomically flat interface is observed for GaN on Al{sub 2}O{sub 3} in contrast to GaN grown on 6H{endash}SiC, where the interface is characterized by large steps. For both substrates,more » faceted holes (named as pinholes) are observed in near-surface regions of the GaN layers occurring with a density of about 7{times}10{sup 8} cm{sup {minus}2}. No unequivocal correlation between the density of pinholes and the density of threading dislocations ({approx}1.6{times}10{sup 10} cm{sup {minus}2} for GaN/Al{sub 2}O{sub 3} and {approx}4{times}10{sup 9} cm{sup {minus}2} for GaN/6H{endash}SiC) can be found. Rather, different types of defects are identified to be correlated with the pinholes, implying a dislocation-independent mechanism for the pinhole formation. Despite the small lattice mismatch between GaN and 6H{endash}SiC, the pronounced original surface roughness of this substrate material is believed to account for both the marked interfacial roughness and the still existing high density of threading dislocations. {copyright} {ital 1997 American Institute of Physics.}« less

Red Light Emitting Schottky Diodes on p-TYPE GaN/AlN/Si(111) Substrate

NASA Astrophysics Data System (ADS)

Chuah, L. S.; Hassan, Z.; Abu Hassan, H.

High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by radio-frequency molecular beam epitaxy. From the Hall measurements, fairly uniform high hole concentration as high as (4-5) × 1020 cm-3 throughout the GaN was achieved. The fabrication of the device is very simple. Nickel ohmic contacts and Schottky contacts using indium were fabricated on Mg-doped p-GaN films. The light emission has been obtained from these thin film electroluminescent devices. Thin film electroluminescent devices were operated under direct current bias. Schottky and ohmic contacts used as cathode and anode were employed in these investigations. Alternatively, two Schottky contacts could be probed as cathode and anode. Thin film electroluminescent devices were able to emit light. However, electrical and optical differences could be observed from the two different probing methods. The red light color could be observed when the potential between the electrodes was increased gradually under forward bias of 8 V at room temperature. Electrical properties of these thin film electroluminescent devices were characterized by current-voltage (I-V) system, the heights of barriers determined from the I-V measurements were found to be related to the electroluminescence.

Nanoporous Gallium Nitride Through Anisotropic Metal-Assisted Electroless Photochemical Wet Etching Technique

NASA Astrophysics Data System (ADS)

Perumal, R.; Hassan, Z.

2016-12-01

Nanoporous gallium nitride (GaN) has many potential applications in light-emitting diodes (LEDs), photovoltaics, templates and chemical sensors. This article reports the porosification of GaN through UV enhanced metal-assisted electroless photochemical wet etching technique using three different acid-based etchants and platinum served as catalyst for porosification. The etching process was conducted at room temperature for a duration of 90min. The morphological, structural, spectral and optical features of the developed porous GaN were studied with appropriate characterization techniques and the obtained results were presented. Field emission scanning electron micrographs exhibited the porosity nature along with excellent porous network of the etched samples. Structural studies confirmed the mono crystalline quality of the porous nanostructures. Raman spectral analyzes inferred the presenting phonon modes such as E2 (TO) and A1 (LO) in fabricated nanoporous structures. The resulted porous nanostructures hold the substantially enhanced photoluminescence intensity compared with the pristine GaN epitaxial film that is interesting and desirable for several advances in the applications of Nano-optoelectronic devices.

Fast and slow UV-photoresponse in n-type GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rocha, R.; Koynov, S.; Brogueira, P.

1999-07-01

The photocurrent decay in n-type GaN films prepared by low-pressure chemical vapor deposition (LPCVD) was measured in the ms-to-s time range using steady-state UV light and in the {micro}s time regime using short high-power pulses from higher harmonics of a Nd:YAG laser. A power law time dependence is observed with exponents ranging from {minus}0.1 to {minus}0.3, which is an indication of a broad distribution of trapping states inside the band gap. Combining Hall effect results and the magnitude of the initial slope of the photocurrent decay they estimate a mobility-lifetime product of 2.1 x 10{sup {minus}4} cm{sup 2}/V for photogeneratedmore » electrons at times below a few {micro}s. Slow transients might be a handicap for applications of GaN in UV detectors.« less

Enhancement of optical and structural quality of semipolar (11-22) GaN by introducing nanoporous SiNx interlayers

NASA Astrophysics Data System (ADS)

Monavarian, Morteza; Metzner, Sebastian; Izyumskaya, Natalia; Müller, Marcus; Okur, Serdal; Zhang, Fan; Can, Nuri; Das, Saikat; Avrutin, Vitaliy; Özgür, Ümit; Bertram, Frank; Christen, Juergen; Morkoç, Hadis

2015-03-01

Enhancement of optical and structural quality of semipolar (11‾22) GaN grown by metal-organic chemical vapor deposition on planar m-sapphire substrates was achieved by using an in-situ epitaxial lateral overgrowth (ELO) technique with nanoporous SiNx layers employed as masks. In order to optimize the procedure, the effect of SiNx deposition time was studied by steady-state photoluminescence (PL), and X-ray diffraction. The intensity of room temperature PL for the (11‾22) GaN layers grown under optimized conditions was about three times higher compared to those for the reference samples having the same thickness but no SiNx interlayers. This finding is attributed to the blockage of extended defect propagation toward the surface by the SiNx interlayers as evidenced from the suppression of emissions associated with basal-plane and prismatic stacking faults with regard to the intensity of donor bound excitons (D0X) in lowtemperature PL spectra. In agreement with the optical data, full width at half maximum values of (11‾22) X-ray rocking curves measured for two different in-plane rotational orientations of [1‾100] and [11‾23] reduced from 0.33º and 0.26º for the reference samples to 0.2º and 0.16º for the nano-ELO structures grown under optimized conditions, respectively.

Low resistivity and low compensation ratio Ga-doped ZnO films grown by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Chen, Cheng-Yu; Hsiao, Li-Han; Chyi, Jen-Inn

2015-09-01

In this study, Ga-doped ZnO (GZO) thin films were deposited on GaN templates by using plasma-assisted molecular beam epitaxy. To obtain low resistivity GZO films, in-situ post-annealing under Zn overpressure was carried out to avoid the generation of acceptor-liked Zn vacancies. The resultant films showed optical transparency over 95% in the visible spectral range. By reducing the acceptor-like defects, GZO films with compensation ratio near 0.4 and resistivity simultaneously lower than 1×10-4 Ω cm have been successfully demonstrated.

Phase degradation in BxGa1-xN films grown at low temperature by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Gunning, Brendan P.; Moseley, Michael W.; Koleske, Daniel D.; Allerman, Andrew A.; Lee, Stephen R.

2017-04-01

Using metalorganic vapor phase epitaxy, a comprehensive study of BxGa1-xN growth on GaN and AlN templates is described. BGaN growth at high-temperature and high-pressure results in rough surfaces and poor boron incorporation efficiency, while growth at low-temperature and low-pressure (750-900 °C and 20 Torr) using nitrogen carrier gas results in improved surface morphology and boron incorporation up to 7.4% as determined by nuclear reaction analysis. However, further structural analysis by transmission electron microscopy and x-ray pole figures points to severe degradation of the high boron composition films, into a twinned cubic structure with a high density of stacking faults and little or no room temperature photoluminescence emission. Films with <1% triethylboron (TEB) flow show more intense, narrower x-ray diffraction peaks, near-band-edge photoluminescence emission at 362 nm, and primarily wurtzite-phase structure in the x-ray pole figures. For films with >1% TEB flow, the crystal structure becomes dominated by the cubic phase. Only when the TEB flow is zero (pure GaN), does the cubic phase entirely disappear from the x-ray pole figure, suggesting that under these growth conditions even very low boron compositions lead to mixed crystalline phases.

Detection of edge component of threading dislocations in GaN by Raman spectroscopy

NASA Astrophysics Data System (ADS)

Kokubo, Nobuhiko; Tsunooka, Yosuke; Fujie, Fumihiro; Ohara, Junji; Hara, Kazukuni; Onda, Shoichi; Yamada, Hisashi; Shimizu, Mitsuaki; Harada, Shunta; Tagawa, Miho; Ujihara, Toru

2018-06-01

We succeeded in measuring the density and direction of the edge component of threading dislocations (TDs) in c-plane (0001) GaN by micro-Raman spectroscopy mapping. In the micro-Raman spectroscopy mapping of the E2 H peak shift between 567.85 and 567.75 cm‑1, six different contrast images are observed toward directions of < 1\\bar{1}00> . By comparing X-ray topography and etch pit images, the E2 H peak shift is observed where the edge component of TDs exists. In contrast, the E2 H peak is not observed where the screw component of TDs exists.

Lattice strain measurements of deuteride phase formation in epitaxial niobium on sapphire

NASA Astrophysics Data System (ADS)

Allain, Monica Marie Cortez

Deuteride phase formation in epitaxial niobium on sapphire was investigated for two film thicknesses (200 and 1200A). A palladium cap of approximately 40A facilitated deuterium absorption from the gas phase and each exposure condition ensured that the film passed through the miscibility gap. In situ resistivity and x-ray diffraction (XRD) provided a correlation between the film resistance and each of the phases. This correlation was used during helium-3 nuclear reaction analysis to determine the deuterium concentration at the beginning and end of the miscibility gap providing a closer look at the strain behavior vs. deuterium concentration within the single and two-phase region. Three orthogonal reciprocal lattice points, the out-of-plane (1--10), the in-plane (002), and the in-plane (110), were monitored with XRD during deuterium absorption to saturation. Cycling effects on the 1200A Nb film were analyzed and found not to influence the strain behavior. The strain was anisotropic for both films, giving an enhanced out-of-plane expansion relative to the two in-plane directions. This is consistent with a clamping force inhibiting in-plane expansion. The observed out-of-plane strain can be used to estimate the in-plane clamping stress; the result is approximately 1 and 2 GPa for the 1200 and 200A Nb films respectively. The volumetric expansion determined from in situ XRD measurements demonstrate that the know value of the specific volume of deuterium, Deltanu/O, in bulk Nb (Deltanu/O = 0.174) does not hold for thin-film, epitaxial geometry (Deltanu/O ≈ 1). Further, the behavior of the specific volume shows a discontinuity at the phase boundary that does not exist in bulk. Lattice strain and overall film expansion from simultaneous XRD and x-ray reflectivity (XRR) measurements, respectively, were performed on both films. These results demonstrate a larger out-of-plane film expansion compared to the out-of-plane lattice strain for the 1200A Nb film compared to the 200A Nb film. It is believe that this is a consequence of greater plasticity within the 1200A film and associated dislocation generation. The enhance plasticity is also confirmed by a greater loss in structural coherence for the 1200A film and the fact that the in-plane clamping stress is greater for the 200A film. Evidence of significant dislocation formation has been confirmed with high-resolution electron microscopy (HREM) for the 1200A Nb film. The HREM images were used to estimate a dislocation density of 1012 cm-2 after repeated cycling. A residual out-of-plane compressive strain was observed in the 1200A Nb film after complete deuterium evolution. This observation can be explained by irreversible interstitial dislocation loop formation.

Cross Slip of Dislocation Loops in GaN Under Shear

DTIC Science & Technology

2014-03-01

methodology 2.1 Discrete dislocation dynamic ( DDD ) simula- tions In this work, we employ a modified version of the ParaDiS code [15, 16]. First a...plane. 4 Conclusions The cross slip mechanisms of different dislocation loops have been studied via DDD simulations using the type <a> active

Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods.

PubMed

Forsberg, Mathias; Serban, Elena Alexandra; Hsiao, Ching-Lien; Junaid, Muhammad; Birch, Jens; Pozina, Galia

2017-04-26

Novel hybrid organic-inorganic nanostructures fabricated to utilize non-radiative resonant energy transfer mechanism are considered to be extremely attractive for a variety of light emitters for down converting of ultaviolet light and for photovoltaic applications since they can be much more efficient compared to devices grown with common design. Organic-inorganic hybrid structures based on green polyfluorene (F8BT) and GaN (0001) nanorods grown by magnetron sputtering on Si (111) substrates are studied. In such nanorods, stacking faults can form periodic polymorphic quantum wells characterized by bright luminescence. In difference to GaN exciton emission, the recombination rate for the stacking fault related emission increases in the presence of polyfluorene film, which can be understood in terms of Förster interaction mechanism. From comparison of dynamic properties of the stacking fault related luminescence in the hybrid structures and in the bare GaN nanorods, the pumping efficiency of non-radiative resonant energy transfer in hybrids was estimated to be as high as 35% at low temperatures.

Microwave annealing of Mg-implanted and in situ Be-doped GaN

NASA Astrophysics Data System (ADS)

Aluri, Geetha S.; Gowda, Madhu; Mahadik, Nadeemullah A.; Sundaresan, Siddarth G.; Rao, Mulpuri V.; Schreifels, John A.; Freitas, J. A.; Qadri, S. B.; Tian, Y.-L.

2010-10-01

An ultrafast microwave annealing method, different from conventional thermal annealing, is used to activate Mg-implants in GaN layer. The x-ray diffraction measurements indicated complete disappearance of the defect sublattice peak, introduced by the implantation process for single-energy Mg-implantation, when the annealing was performed at ≥1400 °C for 15 s. An increase in the intensity of Mg-acceptor related luminescence peak (at 3.26 eV) in the photoluminescence spectra confirms the Mg-acceptor activation in single-energy Mg-implanted GaN. In case of multiple-energy implantation, the implant generated defects persisted even after 1500 °C/15 s annealing, resulting in no net Mg-acceptor activation of the Mg-implant. The Mg-implant is relatively thermally stable and the sample surface roughness is 6 nm after 1500 °C/15 s annealing, using a 600 nm thick AlN cap. In situ Be-doped GaN films, after 1300 °C/5 s annealing have shown Be out-diffusion into the AlN layer and also in-diffusion toward the GaN/SiC interface. The in-diffusion and out-diffusion of the Be increased with increasing annealing temperature. In fact, after 1500 °C/5 s annealing, only a small fraction of in situ doped Be remained in the GaN layer, revealing the inadequateness of using Be-implantation for forming p-type doped layers in the GaN.

A new system for sodium flux growth of bulk GaN. Part I: System development

NASA Astrophysics Data System (ADS)

Von Dollen, Paul; Pimputkar, Siddha; Alreesh, Mohammed Abo; Albrithen, Hamad; Suihkonen, Sami; Nakamura, Shuji; Speck, James S.

2016-12-01

Though several methods exist to produce bulk crystals of gallium nitride (GaN), none have been commercialized on a large scale. The sodium flux method, which involves precipitation of GaN from a sodium-gallium melt supersaturated with nitrogen, offers potentially lower cost production due to relatively mild process conditions while maintaining high crystal quality. We successfully developed a novel apparatus for conducting crystal growth of bulk GaN using the sodium flux method which has advantages with respect to prior reports. A key task was to prevent sodium loss or migration from the growth environment while permitting N2 to access the growing crystal. We accomplished this by implementing a reflux condensing stem along with a reusable capsule containing a hermetic seal. The reflux condensing stem also enabled direct monitoring of the melt temperature, which has not been previously reported for the sodium flux method. Furthermore, we identified and utilized molybdenum and the molybdenum alloy TZM as a material capable of directly containing the corrosive sodium-gallium melt. This allowed implementation of a crucible-free system, which may improve process control and potentially lower crystal impurity levels. Nucleation and growth of parasitic GaN ("PolyGaN") on non-seed surfaces occurred in early designs. However, the addition of carbon in later designs suppressed PolyGaN formation and allowed growth of single crystal GaN. Growth rates for the (0001) Ga face (+c-plane) were up to 14 μm/h while X-ray omega rocking (ω-XRC) curve full width half-max values were 731″ for crystals grown using a later system design. Oxygen levels were high, >1019 atoms/cm3, possibly due to reactor cleaning and handling procedures.

Anharmonic phonon decay in cubic GaN

NASA Astrophysics Data System (ADS)

Cuscó, R.; Domènech-Amador, N.; Novikov, S.; Foxon, C. T.; Artús, L.

2015-08-01

We present a Raman-scattering study of optical phonons in zinc-blende (cubic) GaN for temperatures ranging from 80 to 750 K. The experiments were performed on high-quality, cubic GaN films grown by molecular-beam epitaxy on GaAs (001) substrates. The observed temperature dependence of the optical phonon frequencies and linewidths is analyzed in the framework of anharmonic decay theory, and possible decay channels are discussed in the light of density-functional-theory calculations. The longitudinal-optical (LO) mode relaxation is found to occur via asymmetric decay into acoustic phonons, with an appreciable contribution of higher-order processes. The transverse-optical mode linewidth shows a weak temperature dependence and its frequency downshift is primarily determined by the lattice thermal expansion. The LO phonon lifetime is derived from the observed Raman linewidth and an excellent agreement with previous theoretical predictions is found.

Potential-dependent recombination kinetics of photogenerated electrons in n- and p-type GaN photoelectrodes studied by time-resolved IR absorption spectroscopy.

PubMed

Yamakata, Akira; Yoshida, Masaaki; Kubota, Jun; Osawa, Masatoshi; Domen, Kazunari

2011-07-27

Recombination kinetics of photogenerated electrons in n-type and p-type GaN photoelectrodes active for H(2) and O(2) evolution, respectively, from water was examined by time-resolved IR absorption (TR-IR) spectroscopy. Illumination of a GaN film with UV pulse (355 nm and 6 ns in duration) gives transient interference spectra in both transmittance and reflection modes. Simulation shows that the interference spectra are caused by photogenerated electrons. We observed that recombination in the microsecond region is greatly affected by the applied potentials, the lifetime becoming longer at negative and positive potentials for n- and p-type GaN electrodes, respectively. There is a good correlation between potential dependence of the steady-state reaction efficiency and that of the number of surviving electrons in the millisecond region. We also performed potential jump measurement to examine the shift in Fermi level by photogenerated charge carriers. In the case of n-type GaN, the electrode potential jumps to the negative side by accumulation of electrons in the bulk. However, in the case of p-type GaN, the electrode potential first jumps to the negative side within 20 μs and gradually shifts to the positive side in a few milliseconds, while the number of charge carriers is constant at >0.2 ms. This two-step process is ascribed to electron transport from the bulk to the surface of GaN, because the electrode potential is sensitive to the number of electrons in the bulk. The results confirm that TR-IR combined with potential jump measurement provides useful information for understanding the behavior of charge carriers in photoelectrochemical systems.

Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Szyszka, A., E-mail: szyszka@ihp-microelectronics.com, E-mail: adam.szyszka@pwr.wroc.pl; Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw; Lupina, L.

2014-08-28

Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y{sub 2}O{sub 3} films is detected under the applied thermal growth budget. Asmore » revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated that—with respect to the basic GaN/oxide/Si system without DBR—the insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.« less

Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs

NASA Astrophysics Data System (ADS)

Brault, Julien; Damilano, Benjamin; Courville, Aimeric; Leroux, Mathieu; Kahouli, Abdelkarim; Korytov, Maxim; Vennéguès, Philippe; Randazzo, Gaetano; Chenot, Sébastien; Vinter, Borge; De Mierry, Philippe; Massies, Jean; Rosales, Daniel; Bretagnon, Thierry; Gil, Bernard

2014-03-01

(Al,Ga)N light emitting diodes (LEDs), emitting over a large spectral range from 360 nm (GaN) down to 210 nm (AlN), have been successfully fabricated over the last decade. Clear advantages compared to the traditional mercury lamp technology (e.g. compactness, low-power operation, lifetime) have been demonstrated. However, LED efficiencies still need to be improved. The main problems are related to the structural quality and the p-type doping efficiency of (Al,Ga)N. Among the current approaches, GaN nanostructures, which confine carriers along both the growth direction and the growth plane, are seen as a solution for improving the radiative recombination efficiency by strongly reducing the impact of surrounding defects. Our approach, based on a 2D - 3D growth mode transition in molecular beam epitaxy, can lead to the spontaneous formation of GaN nanostructures on (Al,Ga)N over a broad range of Al compositions. Furthermore, the versatility of the process makes it possible to fabricate nanostructures on both (0001) oriented "polar" and (11 2 2) oriented "semipolar" materials. We show that the change in the crystal orientation has a strong impact on the morphological and optical properties of the nanostructures. The influence of growth conditions are also investigated by combining microscopy (SEM, TEM) and photoluminescence techniques. Finally, their potential as UV emitters will be discussed and the performances of GaN / (Al,Ga)N nanostructure-based LED demonstrators are presented.

The structure of crystallographic damage in GaN formed during rare earth ion implantation with and without an ultrathin AlN capping layer

NASA Astrophysics Data System (ADS)

Gloux, F.; Ruterana, P.; Wojtowicz, T.; Lorenz, K.; Alves, E.

2006-10-01

The crystallographic nature of the damage created in GaN implanted by rare earth ions at 300 keV and room temperature has been investigated by transmission electron microscopy versus the fluence, from 7×10 13 to 2×10 16 at/cm 2, using Er, Eu or Tm ions. The density of point defect clusters was seen to increase with the fluence. From about 3×10 15 at/cm 2, a highly disordered 'nanocrystalline layer' (NL) appears on the GaN surface. Its structure exhibits a mixture of voids and misoriented nanocrystallites. Basal stacking faults (BSFs) of I 1, E and I 2 types have been noticed from the lowest fluence, they are I 1 in the majority. Their density increases and saturates when the NL is observed. Many prismatic stacking faults (PSFs) with Drum atomic configuration have been identified. The I 1 BSFs are shown to propagate easily through GaN by folding from basal to prismatic planes thanks to the PSFs. When implanting through a 10 nm AlN cap, the NL threshold goes up to about 3×10 16 at/cm 2. The AlN cap plays a protective role against the dissociation of the GaN up to the highest fluences. The flat surface after implantation and the absence of SFs in the AlN cap indicate its high resistance to the damage formation.

Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Adolph, David; Tingberg, Tobias; Ive, Tommy

2015-09-01

Plasma-assisted molecular beam epitaxy was used to grow ZnO(0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 445 °C and an O2 flow rate of 2.5 standard cubic centimeters per minute, we obtained ZnO layers with statistically smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm as revealed by atomic force microscopy. The full-width-at-half-maximum for x-ray rocking curves obtained across the ZnO(0002) and ZnO(10 1 bar 5) reflections was 198 and 948 arcsec, respectively. These values indicated that the mosaicity of the ZnO layer was comparable to the corresponding values of the underlying GaN buffer layer. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82% and 73%, respectively, and that the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements revealed that the layers were inherently n-type and had an electron concentration of 1×1019 cm-3 and a Hall mobility of 51 cm2/V s.

The competition between magnetocrystalline and shape anisotropy on the magnetic and magneto-transport properties of crystallographically aligned CuCr2Se4 thin films

NASA Astrophysics Data System (ADS)

Edelman, I.; Esters, M.; Johnson, D. C.; Yurkin, G.; Tarasov, A.; Rautsky, M.; Volochaev, M.; Lyashchenko, S.; Ivantsov, R.; Petrov, D.; Solovyov, L. A.

2017-12-01

Crystallographically aligned nanocrystalline films of the ferromagnetic spinel CuCr2Se4 were successfully synthesized and their structure and alignment were confirmed by X-ray diffraction and high-resolution transmission electron microscopy. The average size of the crystallites is about 200-250 nm, and their (1 1 1) crystal planes are parallel to the film plane. A good match of the film's electronic structure to that of bulk CuCr2Se4 is confirmed by transverse Kerr effect measurements. Four easy 〈1 1 1〉 axes are present in the films. One of these axes is oriented perpendicular and three others are oriented at an angle of 19.5° relative to the film plane. The magnetic properties of the films are determined by a competition between the out-of-plane magnetocrystalline anisotropy and the in-plane shape anisotropy. Magnetic measurements show that the dominating type of anisotropy switches from shape to magnetocrystalline anisotropy near 160 K, which leads to a switch of the effective easy axis from inside the film plane at room temperature to perpendicular to the film plane as the temperature decreases. At last, a moderately large, negative value of the low-temperature magnetoresistance was observed for the first time in CuCr2Se4 films.

Method to grow group III-nitrides on copper using passivation layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Qiming; Wang, George T; Figiel, Jeffrey T

Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.

Self-assembled InN quantum dots on side facets of GaN nanowires

NASA Astrophysics Data System (ADS)

Bi, Zhaoxia; Ek, Martin; Stankevic, Tomas; Colvin, Jovana; Hjort, Martin; Lindgren, David; Lenrick, Filip; Johansson, Jonas; Wallenberg, L. Reine; Timm, Rainer; Feidenhans'l, Robert; Mikkelsen, Anders; Borgström, Magnus T.; Gustafsson, Anders; Ohlsson, B. Jonas; Monemar, Bo; Samuelson, Lars

2018-04-01

Self-assembled, atomic diffusion controlled growth of InN quantum dots was realized on the side facets of dislocation-free and c-oriented GaN nanowires having a hexagonal cross-section. The nanowires were synthesized by selective area metal organic vapor phase epitaxy. A 3 Å thick InN wetting layer was observed after growth, on top of which the InN quantum dots formed, indicating self-assembly in the Stranski-Krastanow growth mode. We found that the InN quantum dots can be tuned to nucleate either preferentially at the edges between GaN nanowire side facets, or directly on the side facets by tuning the adatom migration by controlling the precursor supersaturation and growth temperature. Structural characterization by transmission electron microscopy and reciprocal space mapping show that the InN quantum dots are close to be fully relaxed (residual strain below 1%) and that the c-planes of the InN quantum dots are tilted with respect to the GaN core. The strain relaxes mainly by the formation of misfit dislocations, observed with a periodicity of 3.2 nm at the InN and GaN hetero-interface. The misfit dislocations introduce I1 type stacking faults (…ABABCBC…) in the InN quantum dots. Photoluminescence investigations of the InN quantum dots show that the emissions shift to higher energy with reduced quantum dot size, which we attribute to increased quantum confinement.

Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Wei, Tongbo; Yang, Jiankun; Wei, Yang; Huo, Ziqiang; Ji, Xiaoli; Zhang, Yun; Wang, Junxi; Li, Jinmin; Fan, Shoushan

2016-06-01

We report a novel method to fabricate high quality 2-inch freestanding GaN substrate grown on cross-stacked carbon nanotubes (CSCNTs) coated sapphire by hydride vapor phase epitaxy (HVPE). As nanoscale masks, these CSCNTs can help weaken the interface connection and release the compressive stress by forming voids during fast coalescence and also block the propagation of threading dislocations (TDs). During the cool-down process, thermal stress-induced cracks are initiated at the CSCNTs interface with the help of air voids and propagated all over the films which leads to full self-separation of FS-GaN substrate. Raman and photoluminescence spectra further reveal the stress relief and crystalline improvement of GaN with CSCNTs. It is expected that the efficient, low cost and mass-producible technique may enable new applications for CNTs in nitride optoelectronic fields.

Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal-oxide-semiconductor devices with improved gate dielectric reliability

NASA Astrophysics Data System (ADS)

Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Yamada, Hisashi; Takahashi, Tokio; Shimizu, Mitsuaki; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2018-01-01

A simple and feasible method for fabricating high-quality and highly reliable GaN-based metal-oxide-semiconductor (MOS) devices was developed. The direct chemical vapor deposition of SiO2 films on GaN substrates forming Ga-oxide interlayers was carried out to fabricate SiO2/GaO x /GaN stacked structures. Although well-behaved hysteresis-free GaN-MOS capacitors with extremely low interface state densities below 1010 cm-2 eV-1 were obtained by postdeposition annealing, Ga diffusion into overlying SiO2 layers severely degraded the dielectric breakdown characteristics. However, this problem was found to be solved by rapid thermal processing, leading to the superior performance of the GaN-MOS devices in terms of interface quality, insulating property, and gate dielectric reliability.

Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy.

PubMed

Wei, Tongbo; Yang, Jiankun; Wei, Yang; Huo, Ziqiang; Ji, Xiaoli; Zhang, Yun; Wang, Junxi; Li, Jinmin; Fan, Shoushan

2016-06-24

We report a novel method to fabricate high quality 2-inch freestanding GaN substrate grown on cross-stacked carbon nanotubes (CSCNTs) coated sapphire by hydride vapor phase epitaxy (HVPE). As nanoscale masks, these CSCNTs can help weaken the interface connection and release the compressive stress by forming voids during fast coalescence and also block the propagation of threading dislocations (TDs). During the cool-down process, thermal stress-induced cracks are initiated at the CSCNTs interface with the help of air voids and propagated all over the films which leads to full self-separation of FS-GaN substrate. Raman and photoluminescence spectra further reveal the stress relief and crystalline improvement of GaN with CSCNTs. It is expected that the efficient, low cost and mass-producible technique may enable new applications for CNTs in nitride optoelectronic fields.

Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy

PubMed Central

Wei, Tongbo; Yang, Jiankun; Wei, Yang; Huo, Ziqiang; Ji, Xiaoli; Zhang, Yun; Wang, Junxi; Li, Jinmin; Fan, Shoushan

2016-01-01

We report a novel method to fabricate high quality 2-inch freestanding GaN substrate grown on cross-stacked carbon nanotubes (CSCNTs) coated sapphire by hydride vapor phase epitaxy (HVPE). As nanoscale masks, these CSCNTs can help weaken the interface connection and release the compressive stress by forming voids during fast coalescence and also block the propagation of threading dislocations (TDs). During the cool-down process, thermal stress-induced cracks are initiated at the CSCNTs interface with the help of air voids and propagated all over the films which leads to full self-separation of FS-GaN substrate. Raman and photoluminescence spectra further reveal the stress relief and crystalline improvement of GaN with CSCNTs. It is expected that the efficient, low cost and mass-producible technique may enable new applications for CNTs in nitride optoelectronic fields. PMID:27340030

Optical damage performance of conductive widegap semiconductors: spatial, temporal, and lifetime modeling

DOE PAGES

Elhadj, Selim; Yoo, Jae-hyuck; Negres, Raluca A.; ...

2016-12-19

The optical damage performance of electrically conductive gallium nitride (GaN) and indium tin oxide (ITO) films is addressed using large area, high power laser beam exposures at 1064 nm sub-bandgap wavelength. Analysis of the laser damage process assumes that onset of damage (threshold) is determined by the absorption and heating of a nanoscale region of a characteristic size reaching a critical temperature. We use this model to rationalize semi-quantitatively the pulse width scaling of the damage threshold from picosecond to nanosecond timescales, along with the pulse width dependence of the damage threshold probability derived by fitting large beam damage densitymore » data. Multi-shot exposures were used to address lifetime performance degradation described by an empirical expression based on the single exposure damage model. A damage threshold degradation of at least 50% was observed for both materials. Overall, the GaN films tested had 5-10 × higher optical damage thresholds than the ITO films tested for comparable transmission and electrical conductivity. This route to optically robust, large aperture transparent electrodes and power optoelectronics may thus involve use of next generation widegap semiconductors such as GaN.« less

Dopant radial inhomogeneity in Mg-doped GaN nanowires.

PubMed

Siladie, Alexandra-Madalina; Amichi, Lynda; Mollard, Nicolas; Mouton, Isabelle; Bonef, Bastien; Bougerol, Catherine; Grenier, Adeline; Robin, Eric; Jouneau, Pierre-Henri; Garro, Nuria; Cros, Ana; Daudin, Bruno

2018-06-22

Using atom probe tomography, it is demonstrated that Mg doping of GaN nanowires grown by Molecular Beam Epitaxy results in a marked radial inhomogeneity, namely a higher Mg content in the periphery of the nanowires. This spatial inhomogeneity is attributed to a preferential incorporation of Mg through the m-plane sidewalls of nanowires and is related to the formation of a Mg-rich surface which is stabilized by hydrogen. This is further supported by Raman spectroscopy experiments which give evidence of Mg-H complexes in the doped nanowires. A Mg doping mechanism such as this, specific to nanowires, may lead to higher levels of Mg doping than in layers, boosting the potential interest of nanowires for light emitting diode applications.

Dopant radial inhomogeneity in Mg-doped GaN nanowires

NASA Astrophysics Data System (ADS)

Siladie, Alexandra-Madalina; Amichi, Lynda; Mollard, Nicolas; Mouton, Isabelle; Bonef, Bastien; Bougerol, Catherine; Grenier, Adeline; Robin, Eric; Jouneau, Pierre-Henri; Garro, Nuria; Cros, Ana; Daudin, Bruno

2018-06-01

Using atom probe tomography, it is demonstrated that Mg doping of GaN nanowires grown by Molecular Beam Epitaxy results in a marked radial inhomogeneity, namely a higher Mg content in the periphery of the nanowires. This spatial inhomogeneity is attributed to a preferential incorporation of Mg through the m-plane sidewalls of nanowires and is related to the formation of a Mg-rich surface which is stabilized by hydrogen. This is further supported by Raman spectroscopy experiments which give evidence of Mg-H complexes in the doped nanowires. A Mg doping mechanism such as this, specific to nanowires, may lead to higher levels of Mg doping than in layers, boosting the potential interest of nanowires for light emitting diode applications.

Influence of surface hydroxylation on 3-aminopropyltriethoxysilane growth mode during chemical functionalization of GaN Surfaces: an angle-resolved X-ray photoelectron spectroscopy Study.

PubMed

Arranz, A; Palacio, C; García-Fresnadillo, D; Orellana, G; Navarro, A; Muñoz, E

2008-08-19

A comparative study of the chemical functionalization of undoped, n- and p-type GaN layers grown on sapphire substrates by metal-organic chemical vapor deposition was carried out. Both types of samples were chemically functionalized with 3-aminopropyltriethoxysilane (APTES) using a well-established silane-based approach for functionalizing hydroxylated surfaces. The untreated surfaces as well as those modified by hydroxylation and APTES deposition were analyzed using angle-resolved X-ray photoelectron spectroscopy. Strong differences were found between the APTES growth modes on n- and p-GaN surfaces that can be associated with the number of available hydroxyl groups on the GaN surface of each sample. Depending on the density of surface hydroxyl groups, different mechanisms of APTES attachment to the GaN surface take place in such a way that the APTES growth mode changes from a monolayer to a multilayer growth mode when the number of surface hydroxyl groups is decreased. Specifically, a monolayer growth mode with a surface coverage of approximately 78% was found on p-GaN, whereas the formation of a dense film, approximately 3 monolayers thick, was observed on n-GaN.

DC voltage fields generated by RF plasmas and their influence on film growth morphology through static attraction to metal wetting layers: Beyond ion bombardment effects

NASA Astrophysics Data System (ADS)

Butcher, K. S. A.; Terziyska, P. T.; Gergova, R.; Georgiev, V.; Georgieva, D.; Binsted, P. W.; Skerget, S.

2017-01-01

It is shown that attractive electrostatic interactions between regions of positive charge in RF plasmas and the negative charge of metal wetting layers, present during compound semiconductor film growth, can have a greater influence than substrate temperature on film morphology. Using GaN and InN film growth as examples, the DC field component of a remote RF plasma is demonstrated to electrostatically affect metal wetting layers to the point of actually determining the mode of film growth. Examples of enhanced self-seeded nanopillar growth are provided in the case where the substrate is directly exposed to the DC field generated by the plasma. In another case, we show that electrostatic shielding of the DC field from the substrate can result in the growth of Ga-face GaN layers from gallium metal wetting layers at 490 °C with root-mean-square roughness values as low as 0.6 nm. This study has been carried out using a migration enhanced deposition technique with pulsed delivery of the metal precursor allowing the identification of metal wetting layers versus metal droplets as a function of the quantity of metal source delivered per cycle. It is also shown that electrostatic interactions with the plasma can affect metal rich growth limits, causing metal droplet formation for lower metal flux than would otherwise occur. Accordingly, film growth rates can be increased when shielding the substrate from the positive charge region of the plasma. For the example shown here, growth rates were more than doubled using a shielding grid.

Dual Mode Thin Film Bulk Acoustic Resonators (FBARs) Based on AlN, ZnO and GaN Films with Tilted c-Axis Orientation

DTIC Science & Technology

2010-01-01

TERMS MEMS , acoustic wave devices, acoustic wave sensors Qing-Ming Wang University of Pittsburgh 123 University Place University Club Pittsburgh, PA...resonators,” Proc. SPIE Vol. 6223, 62230I, Micro ( MEMS ) and Nanotechnologies for Space Applications; Thomas George, Zhong-Yang Cheng; Eds. (May...microelectromechanical resonators has been recognized as a technological challenge in the current microelectronics and MEMS development. The

Out-of-plane chiral domain wall spin-structures in ultrathin in-plane magnets

DOE PAGES

Chen, Gong; Kang, Sang Pyo; Ophus, Colin; ...

2017-05-19

Chiral spin textures in ultrathin films, such as skyrmions or chiral domain walls, are believed to offer large performance advantages in the development of novel spintronics technologies. While in-plane magnetized films have been studied extensively as media for current- and field-driven domain wall dynamics with applications in memory or logic devices, the stabilization of chiral spin textures in in-plane magnetized films has remained rare. Here we report a phase of spin structures in an in-plane magnetized ultrathin film system where out-of-plane spin orientations within domain walls are stable. Moreover, while domain walls in in-plane films are generally expected to bemore » non-chiral, we show that right-handed spin rotations are strongly favoured in this system, due to the presence of the interfacial Dzyaloshinskii-Moriya interaction. These results constitute a platform to explore unconventional spin dynamics and topological phenomena that may enable high-performance in-plane spin-orbitronics devices.« less

Exciton Emission from Bare and Alq3/Gold Coated GaN Nanorods

NASA Astrophysics Data System (ADS)

Mohammadi, Fatemesadat; Kuhnert, Gerd; Hommel, Detlef; Schmitzer, Heidrun; Wagner, Hans-Peter

We study the excitonic and impurity related emission in bare and aluminum quinoline (Alq3)/gold coated wurtzite GaN nanorods by temperature-dependent time-integrated (TI) and time-resolved (TR) photoluminescence (PL). The GaN nanorods were grown by molecular beam epitaxy. Alq3 as well as Alq3/gold covered nanorods were synthesized by organic molecular beam deposition. In the near-band edge region a donor-bound-exciton (D0X) emission is observed at 3.473 eV. Another emission band at 3.275 eV reveals LO-phonon replica and is attributed to a donor-acceptor-pair (DAP) luminescence. TR PL traces at 20 K show a nearly biexponential decay for the D0X with lifetimes of approximately 180 and 800 ps for both bare and Alq3 coated nanorods. In GaN nanorods which were coated with an Alq3 film and subsequently with a 10 nm thick gold layer we observe a PL quenching of D0X and DAP band and the lifetimes of the D0X transition shorten. The quenching behaviour is partially attributed to the energy-transfer from free excitons and donor-bound-excitons to plasmon oscillations in the gold layer.

Dynamics of threading dislocations in porous heteroepitaxial GaN films

NASA Astrophysics Data System (ADS)

Gutkin, M. Yu.; Rzhavtsev, E. A.

2017-12-01

Behavior of threading dislocations in porous heteroepitaxial gallium nitride (GaN) films has been studied using computer simulation by the two-dimensional discrete dislocation dynamics approach. A computational scheme, where pores are modeled as cross sections of cylindrical cavities, elastically interacting with unidirectional parallel edge dislocations, which imitate threading dislocations, is used. Time dependences of coordinates and velocities of each dislocation from dislocation ensembles under investigation are obtained. Visualization of current structure of dislocation ensemble is performed in the form of a location map of dislocations at any time. It has been shown that the density of appearing dislocation structures significantly depends on the ratio of area of a pore cross section to area of the simulation region. In particular, increasing the portion of pores surface on the layer surface up to 2% should lead to about a 1.5-times decrease of the final density of threading dislocations, and increase of this portion up to 15% should lead to approximately a 4.5-times decrease of it.

Structural and optical properties of vanadium ion-implanted GaN

NASA Astrophysics Data System (ADS)

Macková, A.; Malinský, P.; Jagerová, A.; Sofer, Z.; Klímová, K.; Sedmidubský, D.; Mikulics, M.; Lorinčík, J.; Veselá, D.; Böttger, R.; Akhmadaliev, S.

2017-09-01

The field of advanced electronic and optical devices searches for a new generation of transistors and lasers. The practical development of these novel devices depends on the availability of materials with the appropriate magnetic and optical properties, which is strongly connected to the internal morphology and the structural properties of the prepared doped structures. In this contribution, we present the characterisation of V ion-doped GaN epitaxial layers. GaN layers, oriented along the (0 0 0 1) crystallographic direction, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates were implanted with 400 keV V+ ions at fluences of 5 × 1015 and 5 × 1016 cm-2. Elemental depth profiling was accomplished by Rutherford Backscattering Spectrometry (RBS) and Secondary Ion Mass Spectrometry (SIMS) to obtain precise information about the dopant distribution. Structural investigations are needed to understand the influence of defect distribution on the crystal-matrix recovery and the desired structural and optical properties. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy to get a comprehensive insight into the structural modification of implanted GaN and to study the influence of subsequent annealing on the crystalline matrix reconstruction. Photoluminescence measurement was carried out to check the optical properties of the prepared structures.

Effect of the out-of-plane stress on the properties of epitaxial SrTiO3 films with nano-pillar array on Si-substrate

NASA Astrophysics Data System (ADS)

Bai, Gang; Xie, Qiyun; Liu, Zhiguo; Wu, Dongmei

2015-08-01

A nonlinear thermodynamic formalism has been proposed to calculate the physical properties of the epitaxial SrTiO3 films containing vertical nano-pillar array on Si-substrate. The out-of-plane stress induced by the mismatch between film and nano-pillars provides an effective way to tune the physical properties of ferroelectric SrTiO3 films. Tensile out-of-plane stress raises the phase transition temperature and increases the out-of-plane polarization, but decreases the out-of-plane dielectric constant below Curie temperature, pyroelectric coefficient, and piezoelectric coefficient. These results showed that by properly controlling the out-of-plane stress, the out-of-plane stress induced paraelectric-ferroelectric phase transformation will appear near room temperature. Excellent dielectric, pyroelectric, piezoelectric properties of these SrTiO3 films similar to PZT and other lead-based ferroelectrics can be expected.

Laser damage mechanisms in conductive widegap semiconductor films

DOE PAGES

Yoo, Jae-Hyuck; Menor, Marlon G.; Adams, John J.; ...

2016-07-25

Here, laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN,more » carbon complexes were proposed as potential damage precursors or markers.« less

Coupled Chiral Structure in Graphene-Based Film for Ultrahigh Thermal Conductivity in Both In-Plane and Through-Plane Directions.

PubMed

Meng, Xin; Pan, Hui; Zhu, Chengling; Chen, Zhixin; Lu, Tao; Xu, Da; Li, Yao; Zhu, Shenmin

2018-06-21

The development of high-performance thermal management materials to dissipate excessive heat both in plane and through plane is of special interest to maintain efficient operation and prolong the life of electronic devices. Herein, we designed and constructed a graphene-based composite film, which contains chiral liquid crystals (cellulose nanocrystals, CNCs) inside graphene oxide (GO). The composite film was prepared by annealing and compacting of self-assembled GO-CNC, which contains chiral smectic liquid crystal structures. The helical arranged nanorods of carbonized CNC act as in-plane connections, which bridge neighboring graphene sheets. More interestingly, the chiral structures also act as through-plane connections, which bridge the upper and lower graphene layers. As a result, the graphene-based composite film shows extraordinary thermal conductivity, in both in-plane (1820.4 W m -1 K -1 ) and through-plane (4.596 W m -1 K -1 ) directions. As a thermal management material, the heat dissipation and transportation behaviors of the composite film were investigated using a self-heating system and the results showed that the real-time temperature of the heater covered with the film was 44.5 °C lower than a naked heater. The prepared film shows a much higher efficiency of heat transportation than the commonly used thermal conductive Cu foil. Additionally, this graphene-based composite film exhibits excellent mechanical strength of 31.6 MPa and an electrical conductivity of 667.4 S cm -1 . The strategy reported here may open a new avenue to the development of high-performance thermal management films.

Phase degradation in B xGa 1–xN films grown at low temperature by metalorganic vapor phase epitaxy

DOE PAGES

Gunning, Brendan P.; Moseley, Michael W.; Koleske, Daniel D.; ...

2016-11-01

Using metalorganic vapor phase epitaxy, a comprehensive study of B xGa 1-xN growth on GaN and AlN templates is described. BGaN growth at high-temperature and high-pressure results in rough surfaces and poor boron incorporation efficiency, while growth at low-temperature and low-pressure (750–900 °C and 20 Torr) using nitrogen carrier gas results in improved surface morphology and boron incorporation up to ~7.4% as determined by nuclear reaction analysis. However, further structural analysis by transmission electron microscopy and x-ray pole figures points to severe degradation of the high boron composition films, into a twinned cubic structure with a high density of stackingmore » faults and little or no room temperature photoluminescence emission. Films with <1% triethylboron (TEB) flow show more intense, narrower x-ray diffraction peaks, near-band-edge photoluminescence emission at ~362 nm, and primarily wurtzite-phase structure in the x-ray pole figures. For films with >1% TEB flow, the crystal structure becomes dominated by the cubic phase. As a result, only when the TEB flow is zero (pure GaN), does the cubic phase entirely disappear from the x-ray pole figure, suggesting that under these growth conditions even very low boron compositions lead to mixed crystalline phases.« less

Phase degradation in B xGa 1–xN films grown at low temperature by metalorganic vapor phase epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gunning, Brendan P.; Moseley, Michael W.; Koleske, Daniel D.

Using metalorganic vapor phase epitaxy, a comprehensive study of B xGa 1-xN growth on GaN and AlN templates is described. BGaN growth at high-temperature and high-pressure results in rough surfaces and poor boron incorporation efficiency, while growth at low-temperature and low-pressure (750–900 °C and 20 Torr) using nitrogen carrier gas results in improved surface morphology and boron incorporation up to ~7.4% as determined by nuclear reaction analysis. However, further structural analysis by transmission electron microscopy and x-ray pole figures points to severe degradation of the high boron composition films, into a twinned cubic structure with a high density of stackingmore » faults and little or no room temperature photoluminescence emission. Films with <1% triethylboron (TEB) flow show more intense, narrower x-ray diffraction peaks, near-band-edge photoluminescence emission at ~362 nm, and primarily wurtzite-phase structure in the x-ray pole figures. For films with >1% TEB flow, the crystal structure becomes dominated by the cubic phase. As a result, only when the TEB flow is zero (pure GaN), does the cubic phase entirely disappear from the x-ray pole figure, suggesting that under these growth conditions even very low boron compositions lead to mixed crystalline phases.« less

Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Bohr-Ran; Liao, Chung-Chi; Ke, Wen-Cheng, E-mail: wcke@saturn.yzu.edu.tw

2014-03-21

This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highlymore » nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.« less

Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

NASA Astrophysics Data System (ADS)

Huang, Bohr-Ran; Liao, Chung-Chi; Ke, Wen-Cheng; Chang, Yuan-Ching; Huang, Hao-Ping; Chen, Nai-Chuan

2014-03-01

This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highly nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.

Stacking fault related luminescence in GaN nanorods.

PubMed

Forsberg, M; Serban, A; Poenaru, I; Hsiao, C-L; Junaid, M; Birch, J; Pozina, G

2015-09-04

Optical and structural properties are presented for GaN nanorods (NRs) grown in the [0001] direction on Si(111) substrates by direct-current reactive magnetron sputter epitaxy. Transmission electron microscopy (TEM) reveals clusters of dense stacking faults (SFs) regularly distributed along the c-axis. A strong emission line at ∼3.42 eV associated with the basal-plane SFs has been observed in luminescence spectra. The optical signature of SFs is stable up to room temperatures with the activation energy of ∼20 meV. Temperature-dependent time-resolved photoluminescence properties suggest that the recombination mechanism of the 3.42 eV emission can be understood in terms of multiple quantum wells self-organized along the growth axis of NRs.

MOCVD growth and characterization of gallium nitride and gallium antimonide nanowires

NASA Astrophysics Data System (ADS)

Burke, Robert Alan

Group-III nitride and group-III antimonide thin films have been used for years in optoelectronic, high-speed applications, and high power/high temperature applications such as light emitting diodes (LEDs), microwave power devices, and thermovoltaics. In recent years, nanowires have gained interest due to the ability to take advantage of their geometry for increased light absorption and the synthesis of radial heterostructures. Several growth techniques have been explored for the growth of GaN and GaSb nanowires. Metal-organic chemical vapor deposition (MOCVD) is of particular interest due to its use in the commercial growth and fabrication of GaN-based and GaSb-based devices. The first part of this thesis focused on addressing several key issues related to the growth of GaN nanowires by MOCVD. Preliminary studies investigated the effect of growth conditions on GaN nanowire formation in a hot wall MOCVD reactor. A computational fluid dynamics-based model was developed to predict the gas phase velocity, temperature and concentration profiles in the reactor. The results demonstrate a strong dependence of GaN nanowire growth on substrate position within the reactor which is due to the rapid reaction and depletion of precursors near the gas inlet of the reactor. Ni-catalyzed GaN nanowire growth was observed to occur over the temperature range of 800-900°C, which is significantly lower than typical GaN thin film temperatures. The nanowires, however, exhibited a tapered diameter due to thin film deposition which occurred simultaneously with nanowire growth. Based on the low growth temperatures, TEM characterization was carried out to investigate the nature of the catalyst. Through these studies, the catalyst was found to consist of Ni3Ga, indicating the presence of a vapor-solid-solid growth mechanism. In an attempt to improve the nanowire growth selectivity, GeCl4 was added during growth resulting in a drastic increase in nanowire density and a reduction in the tapering of the nanowires. Upon further inspection with TEM, the nanowires were found to consist of two morphologies: smooth nanowires and serrated nanowires. The smooth nanowires were found to consist of the wurtzite crystal structure, while the serrated nanowires were determined to have a wurtzite core with zinc blende faceted islands protruding from the wurtzite core. The second half of this thesis focused on the growth and characterization of GaSb nanowires. An extensive amount of work has been carried out on GaSb thin films, however only a few reports exist on GaSb nanowire growth. As a result, it was necessarily to complete a systematic study to determine a growth window for GaSb nanowires. A narrow range of growth conditions were found for Au-catalyzed GaSb nanowire growth. Vertically oriented nanowires were observed over a pressure range of 150-300 Torr depending on the substrate. Based on these findings, additional characterization was carried out to investigate the structural properties of the nanowires along with chemical analysis of the catalyst to determine the nature of the catalyst as a function of the growth conditions. The catalyst was found to consist of Ga, Sb, and Au consistent with that expected for vapor-liquidsolid growth, however the concentrations varied depending on the growth conditions and nanowire sample. For one set of nanowires, the seed particle contained a Au-Sb solid solution (1-15 at.% Sb). For the other set of nanowires, the particle consisted of an AuSb2 grain and an AuGa or Au2Ga grain that resulted in the formation of a bicrystalline nanowire. Photoluminescence measurements were also obtained on these samples and compared to the thin film literature. Samples grown on Si (111) were found to possess good optical properties, while samples grown on sapphire substrates were dominated by native defect transitions. The optical quality of the nanowire sample was also found to have a significant dependence on the V/III ratio.

MBE growth and processing of III/V-nitride semiconductor thin film structures: Growth of gallium indium arsenic nitride and nano-machining with focused ion beam and electron beam

NASA Astrophysics Data System (ADS)

Park, Yeonjoon

The advanced semiconductor material InGaAsN was grown with nitrogen plasma assisted Molecular Beam Epitaxy (MBE). The InGaAsN layers were characterized with High Resolution X-ray Diffraction (HRXDF), Atomic Fore Microscope (AFM), X-ray Photoemission Spectroscopy (XPS) and Photo-Luminescence (PL). The reduction of the band gap energy was observed with the incorporation of nitrogen and the lattice matched condition to the GaAs substrate was achieved with the additional incorporation of indium. A detailed investigation was made for the growth mode changes from planar layer-by-layer growth to 3D faceted growth with a higher concentration of nitrogen. A new X-ray diffraction analysis was developed and applied to the MBE growth on GaAs(111)B, which is one of the facet planes of InGaAsN. As an effort to enhance the processing tools for advanced semiconductor materials, gas assisted Focused Ion Beam (FIB) vertical milling was performed on GaN. The FIB processed area shows an atomically flat surface, which is good enough for the fabrication of Double Bragg Reflector (DBR) mirrors for the Blue GaN Vertical Cavity Surface Emitting Laser (VCSEL) Diodes. An in-situ electron beam system was developed to combine the enhanced lithographic processing capability with the atomic layer growth capability by MBE. The electron beam system has a compensation capability against substrate vibration and thermal drift. In-situ electron beam lithography was performed with the low pressure assisting gas. The advanced processing and characterization methods developed in this thesis will assist the development of superior semiconductor materials for the future.

Electron mobility of self-assembled and dislocation free InN nanorods grown on GaN nano wall network template

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tangi, Malleswararao; De, Arpan; Ghatak, Jay

2016-05-28

A kinetically controlled two-step growth process for the formation of an array of dislocation free high mobility InN nanorods (NRs) on GaN nanowall network (NWN) by Molecular Beam Epitaxy is demonstrated here. The epitaxial GaN NWN is formed on c-sapphire under nitrogen rich conditions, and then changing the source from Ga to In at appropriate substrate temperature yields the nucleation of a self assembled spontaneous m-plane side faceted-InN NR. By HRTEM, the NRs are shown to be dislocation-free and have a low band gap value of 0.65 eV. Hall measurements are carried out on a single InN NR along with J-Vmore » measurements that yield mobility values as high as ≈4453 cm{sup 2}/V s and the carrier concentration of ≈1.1 × 10{sup 17} cm{sup −3}, which are unprecedented in the literature for comparable InN NR diameters.« less

Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

PubMed Central

Kumar, Ashutosh; Heilmann, M.; Latzel, Michael; Kapoor, Raman; Sharma, Intu; Göbelt, M.; Christiansen, Silke H.; Kumar, Vikram; Singh, Rajendra

2016-01-01

The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of nanoscale Schottky diodes and large area diodes is explained using cathodoluminescence measurements, surface potential analysis using Kelvin probe force microscopy and 1ow frequency noise measurements. The noise measurements on large area diodes on nanorods array and epitaxial film suggest the presence of barrier inhomogeneities at the metal/semiconductor interface which deviate the noise spectra from Lorentzian to 1/f type. These barrier inhomogeneities in large area diodes resulted in reduced barrier height whereas due to the limited role of barrier inhomogeneities in individual nanorod based Schottky diode, a higher barrier height is obtained. PMID:27282258

Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.

2007-10-01

MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2eV, which corresponds to a 3.2eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior.

Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN

NASA Astrophysics Data System (ADS)

Hiraiwa, Atsushi; Sasaki, Toshio; Okubo, Satoshi; Horikawa, Kiyotaka; Kawarada, Hiroshi

2018-04-01

Atomic-layer-deposited (ALD) Al2O3 films are the most promising surface passivation and gate insulation layers in non-Si semiconductor devices. Here, we carried out an extensive study on the time-dependent dielectric breakdown characteristics of ALD-Al2O3 films formed on homo-epitaxial GaN substrates using two different oxidants at two different ALD temperatures. The breakdown times were approximated by Weibull distributions with average shape parameters of 8 or larger. These values are reasonably consistent with percolation theory predictions and are sufficiently large to neglect the wear-out lifetime distribution in assessing the long-term reliability of the Al2O3 films. The 63% lifetime of the Al2O3 films increases exponentially with a decreasing field, as observed in thermally grown SiO2 films at low fields. This exponential relationship disproves the correlation between the lifetime and the leakage current. Additionally, the lifetime decreases with measurement temperature with the most remarkable reduction observed in high-temperature (450 °C) O3-grown films. This result agrees with that from a previous study, thereby ruling out high-temperature O3 ALD as a gate insulation process. When compared at 200 °C under an equivalent SiO2 field of 4 MV/cm, which is a design guideline for thermal SiO2 on Si, high-temperature H2O-grown Al2O3 films have the longest lifetimes, uniquely achieving the reliability target of 20 years. However, this target is accomplished by a relatively narrow margin and, therefore, improvements in the lifetime are expected to be made, along with efforts to decrease the density of extrinsic Al2O3 defects, if any, to promote the practical use of ALD Al2O3 films.

Distinct crystallinity and orientations of hydroxyapatite thin films deposited on C- and A-plane sapphire substrates

NASA Astrophysics Data System (ADS)

Akazawa, Housei; Ueno, Yuko

2014-10-01

We report how the crystallinity and orientation of hydroxyapatite (HAp) films deposited on sapphire substrates depend on the crystallographic planes. Both solid-phase crystallization of amorphous HAp films and crystallization during sputter deposition at elevated temperatures were examined. The low-temperature epitaxial phase on C-plane sapphire substrates has c-axis orientated HAp crystals regardless of the crystallization route, whereas the preferred orientation switches to the (310) direction at higher temperatures. Only the symmetric stretching mode (ν1) of PO43- units appears in the Raman scattering spectra, confirming well-ordered crystalline domains. In contrast, HAp crystals grown on A-plane sapphire substrates are always oriented toward random orientations. Exhibiting all vibrational modes (ν1, ν3, and ν4) of PO43- units in the Raman scattering spectra reflects random orientation, violating the Raman selection rule. If we assume that Raman intensities of PO43- units represent the crystallinity of HAp films, crystallization terminating the surface with the C-plane is hindered by the presence of excess H2O and OH species in the film, whereas crystallization at random orientations on the A-plane sapphire is rather promoted by these species. Such contrasting behaviors between C-plane and A-plane substrates will reflect surface-plane dependent creation of crystalline seeds and eventually determine the orientation of resulting HAp films.

Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition

DOEpatents

Han, Jung; Su, Jie

2008-08-05

Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

Defect-related photoluminescence in Mg-doped GaN nanostructures

NASA Astrophysics Data System (ADS)

Reshchikov, M. A.; Shahedipour-Sandvik, F.; Messer, B. J.; Jindal, V.; Tripathi, N.; Tungare, M.

2009-12-01

Thin film of GaN:Mg, pyramidal GaN:Mg on GaN, sapphire and AlN substrates were grown in a MOCVD system under same growth conditions and at the same time. In samples with Mg-doped GaN pyramids on GaN:Si template a strong ultraviolet (UVL) band with few phonon replicas dominated at low temperature and was attributed to transitions from shallow donors to shallow Mg acceptor. In samples grown on sapphire and AlN substrates the UVL band appeared as a structureless band with the maximum at about 3.25 eV. There is a possibility that the structureless UVL band and the UVL band with phonon structure have different origin. In addition to the UVL band, the blue luminescence (BL) band peaking at 2.9 eV was observed in samples representing GaN:Mg pyramids on GaN:Si substrate. It is preliminary attributed to transitions from shallow donors to Zn acceptor in GaN:Si substrate.

Spin reorientations in Tb-Fe films grown on polyimide substrates

NASA Astrophysics Data System (ADS)

Maneesh, K. Sai; Arout Chelvane, J.; Talapatra, A.; Basumatary, Himalay; Mohanty, J.; Kamat, S. V.

2018-02-01

This paper reports the effect of film thickness and rapid thermal annealing on the spin reorientations in Tb-Fe films grown on flexible polyimide substrates. Magnetization studies indicated that the spins reorient from in-plane to out-of-plane direction with increase in film thicknesses. This was confirmed by magnetic force microscopy studies which showed weak featureless contrast for films deposited with lower thickness and a strong out-of-plane contrast for films grown with higher thicknesses. On subsequent rapid thermal annealing all the Tb-Fe films exhibited in-plane magnetic anisotropy. The results were explained based on competition between uniaxial and shape anisotropies, nature of residual stresses as well as nucleation of crystalline Fe phase in an amorphous Tb-Fe matrix on rapid thermal annealing.

Atomic layer deposition TiO 2-Al 2O 3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors

DOE PAGES

Wei, Daming; Edgar, James H.; Briggs, Dayrl P.; ...

2014-10-15

This research focuses on the benefits and properties of TiO 2-Al 2O 3 nano-stack thin films deposited on Ga 2O 3/GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films’ structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO 2, 7.1 nm Al 2O 3 and 2 nm Ga 2O 3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectronmore » spectroscopy (XPS) depth profile, was negligible for GaN pretreated by thermal oxidation in O 2 for 30 minutes at 850°C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nano-stack, as determined by atomic force microscopy. The dielectric constant of TiO 2-Al 2O 3 on Ga2O3/GaN was increased to 12.5 compared to that of pure Al 2O 3 (8~9) on GaN. In addition, the nano-stack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 × 10 11 cm -2. The gate leakage current density (J=2.81× 10 -8 A/cm 2) was low at +1 V gate bias. These results demonstrate the promising potential of plasma ALD deposited TiO 2/Al 2O 3 for serving as the gate oxide on Ga 2O 3/GaN based MOS devices.« less

Atomic layer deposition TiO 2-Al 2O 3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, Daming; Edgar, James H.; Briggs, Dayrl P.

This research focuses on the benefits and properties of TiO 2-Al 2O 3 nano-stack thin films deposited on Ga 2O 3/GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films’ structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO 2, 7.1 nm Al 2O 3 and 2 nm Ga 2O 3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectronmore » spectroscopy (XPS) depth profile, was negligible for GaN pretreated by thermal oxidation in O 2 for 30 minutes at 850°C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nano-stack, as determined by atomic force microscopy. The dielectric constant of TiO 2-Al 2O 3 on Ga2O3/GaN was increased to 12.5 compared to that of pure Al 2O 3 (8~9) on GaN. In addition, the nano-stack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 × 10 11 cm -2. The gate leakage current density (J=2.81× 10 -8 A/cm 2) was low at +1 V gate bias. These results demonstrate the promising potential of plasma ALD deposited TiO 2/Al 2O 3 for serving as the gate oxide on Ga 2O 3/GaN based MOS devices.« less

Artificial in-plane ordering of textured YBa2Cu3O(7-x) films deposited on polycrystalline yttria-stabilized zirconia substrates

NASA Astrophysics Data System (ADS)

Harshavardhan, K. S.; Rajeswari, M.; Hwang, D. M.; Chen, C. Y.; Sands, T. D.; Venkatesan, T.; Tkaczyk, J. E.; Lay, K. W.; Safari, A.; Johnson, L.

1992-12-01

Anisotropic surface texturing of the polycrystalline yttria-stabilized zirconia substrates, prior to YBa2Cu3O(7-x) film deposition, is shown to promote in-plane (basal plane) ordering of the film growth in addition to the c-axis texturing. The Jc's of the films in the weak-link-dominated low-field regime are enhanced considerably, and this result is attributed to the reduction of weak links resulting from a reduction in the number of in-plane large-angle grain boundaries.

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN.

PubMed

Soh, C B; Liu, W; Yong, A M; Chua, S J; Chow, S Y; Tripathy, S; Tan, R J N

2010-08-01

Phosphor-free apple-white light emitting diodes have been fabricated using a dual stacked InGaN/GaN multiple quantum wells comprising of a lower set of long wavelength emitting indium-rich nanostructures incorporated in multiple quantum wells with an upper set of cyan-green emitting multiple quantum wells. The light-emitting diodes were grown on nano-epitaxially lateral overgrown GaN template formed by regrowth of GaN over SiO(2) film patterned with an anodic aluminum oxide mask with holes of 125 nm diameter and a period of 250 nm. The growth of InGaN/GaN multiple quantum wells on these stress relaxed low defect density templates improves the internal quantum efficiency by 15% for the cyan-green multiple quantum wells. Higher emission intensity with redshift in the PL peak emission wavelength is obtained for the indium-rich nanostructures incorporated in multiple quantum wells. The quantum wells grown on the nano-epitaxially lateral overgrown GaN has a weaker piezoelectric field and hence shows a minimal peak shift with application of higher injection current. An enhancement of external quantum efficiency is achieved for the apple-white light emitting diodes grown on the nano-epitaxially lateral overgrown GaN template based on the light -output power measurement. The improvement in light extraction efficiency, η(extraction,) was found to be 34% for the cyan-green emission peak and 15% from the broad long wavelength emission with optimized lattice period.

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN

NASA Astrophysics Data System (ADS)

Soh, C. B.; Liu, W.; Yong, A. M.; Chua, S. J.; Chow, S. Y.; Tripathy, S.; Tan, R. J. N.

2010-11-01

Phosphor-free apple-white light emitting diodes have been fabricated using a dual stacked InGaN/GaN multiple quantum wells comprising of a lower set of long wavelength emitting indium-rich nanostructures incorporated in multiple quantum wells with an upper set of cyan-green emitting multiple quantum wells. The light-emitting diodes were grown on nano-epitaxially lateral overgrown GaN template formed by regrowth of GaN over SiO2 film patterned with an anodic aluminum oxide mask with holes of 125 nm diameter and a period of 250 nm. The growth of InGaN/GaN multiple quantum wells on these stress relaxed low defect density templates improves the internal quantum efficiency by 15% for the cyan-green multiple quantum wells. Higher emission intensity with redshift in the PL peak emission wavelength is obtained for the indium-rich nanostructures incorporated in multiple quantum wells. The quantum wells grown on the nano-epitaxially lateral overgrown GaN has a weaker piezoelectric field and hence shows a minimal peak shift with application of higher injection current. An enhancement of external quantum efficiency is achieved for the apple-white light emitting diodes grown on the nano-epitaxially lateral overgrown GaN template based on the light -output power measurement. The improvement in light extraction efficiency, ηextraction, was found to be 34% for the cyan-green emission peak and 15% from the broad long wavelength emission with optimized lattice period.

Influences of growth parameters on the reaction pathway during GaN synthesis

NASA Astrophysics Data System (ADS)

Zhang, Zhi; Liu, Zhongyi; Fang, Haisheng

2018-01-01

Gallium nitride (GaN) film growth is a complicated physical and chemical process including fluid flow, heat transfer, species transport and chemical reaction. Study of the reaction mechanism, i.e., the reaction pathway, is important for optimizing the growth process in the actual manufacture. In the paper, the growth pathway of GaN in a closed-coupled showerhead metal-organic chemical vapor deposition (CCS-MOCVD) reactor is investigated in detail using computational fluid dynamics (CFD). Influences of the process parameters, such as the chamber pressure, the inlet temperature, the susceptor temperature and the pre-exponential factor, on the reaction pathway are examined. The results show that increases of the chamber pressure or the inlet temperature, as well as reductions of the susceptor temperature or the pre-exponential factor lead to the adduct route dominating the growth. The deposition rate contributed by the decomposition route, however, can be enhanced dramatically by increasing the inlet temperature, the susceptor temperature and the pre-exponential factor.

Electronic Band Structure Tuning of Highly-Mismatched-Alloys for Energy Conversion Applications

NASA Astrophysics Data System (ADS)

Ting, Min

Highly-mismatched alloys: ZnO1-xTe x and GaN1-xSb x are discussed within the context of finding the suitable material for a cost-effective Si-based tandem solar cell (SBTSC). SBTSC is an attractive concept for breaking through the energy conversion efficiency theoretical limit of a single junction solar cell. Combining with a material of 1.8 eV band gap, SBTSC can theoretically achieve energy conversion efficiency > 45%. ZnO and GaN are wide band gap semiconductors. Alloying Te in ZnO and alloying Sb in GaN result in large band gap reduction to < 2 eV from 3.3 eV and 3.4 eV respectively. The band gap reduction is majorly achieved by the upward shift of valence band (VB). Incorporating Te in ZnO modifies the VB of ZnO through the valence-band anticrossing (VBAC) interaction between localized Te states and ZnO VB delocalized states, which forms a Te-derived VB at 1 eV above the host VB. Similar band structure modification is resulted from alloying Sb in GaN. Zn1-xTex and GaN 1-xSbx thin films are synthesized across the whole composition range by pulsed laser deposition (PLD) and low temperature molecular beam epitaxy (LT-MBE) respectively. The electronic band edges of these alloys are measured by synchrotron X-ray absorption, emission, and the X-ray photoelectron spectroscopies. Modeling the optical absorption coefficient with the band anticrossing (BAC) model revealed that the Te and Sb defect levels to be at 0.99 eV and 1.2 eV above the VB of ZnO and GaN respectively. Electrically, Zn1-xTex is readily n-type conductive and GaN1-xSbx is strongly p-type conductive. A heterojunction device of p-type GaN 0.93Sb0.07 with n-type ZnO0.77Te0.93 upper cell (band gap at 1.8 eV) on Si bottom cell is proposed as a promising SBTSC device.

Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate.

PubMed

Ghazali, Norizzawati Mohd; Yasui, Kanji; Hashim, Abdul Manaf

2014-01-01

Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm(2) using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si.

Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate

PubMed Central

2014-01-01

Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm2 using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si. PMID:25593562

Investigation on structural, optical and electrical properties of Cp2Mg flow varied p-GaN grown by MOCVD

NASA Astrophysics Data System (ADS)

Surender, S.; Pradeep, S.; Ramesh, R.; Baskar, K.

2016-05-01

In this work the effect of different concentration of Magnesium doped GaN (p-GaN) were systematically studied. The p-GaN epilayers were grown on c-plane sapphire substrate by horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD) with various flow rates of 100 sccm to 300 sccm using bis-(cyclopentadienyl) - magnesium (Cp2Mg) precursor. The samples were subjected to structural, optical, morphological and electrical studies using High Resolution X-ray diffraction (HRXRD), room temperature photoluminescence (PL), Atomic Force Microscopy (AFM) and Hall measurement respectively. Results indicated that the Mg doped GaN of 200 sccm Cp2Mg has the root mean square (rms) roughness of about 0.3 nm for a scan area of 5×5 µm2 which has good two dimensional growth. Moreover, Hall measurements results shows that (200 sccm Cp2Mg) Mg-doped GaN possess the highest hole concentration of 5.4×1017cm-3 and resistivity of 1.7 Ωcm at room temperature.

Investigation on structural, optical and electrical properties of Cp2Mg flow varied p-GaN grown by MOCVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Surender, S.; Pradeep, S.; Ramesh, R.

2016-05-23

In this work the effect of different concentration of Magnesium doped GaN (p-GaN) were systematically studied. The p-GaN epilayers were grown on c-plane sapphire substrate by horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD) with various flow rates of 100 sccm to 300 sccm using bis-(cyclopentadienyl) - magnesium (Cp2Mg) precursor. The samples were subjected to structural, optical, morphological and electrical studies using High Resolution X-ray diffraction (HRXRD), room temperature photoluminescence (PL), Atomic Force Microscopy (AFM) and Hall measurement respectively. Results indicated that the Mg doped GaN of 200 sccm Cp2Mg has the root mean square (rms) roughness of about 0.3more » nm for a scan area of 5×5 µm{sup 2} which has good two dimensional growth. Moreover, Hall measurements results shows that (200 sccm Cp2Mg) Mg-doped GaN possess the highest hole concentration of 5.4×10{sup 17}cm{sup −3} and resistivity of 1.7 Ωcm at room temperature.« less

Mechanics of graded glass composites and zinc oxide thin films grown at 90 degrees Celsius in water

NASA Astrophysics Data System (ADS)

Fillery, Scott Pierson

2007-06-01

The purpose of this research was to study the mechanical stability of two different material systems. The glass laminate system, exhibiting a threshold strength when placed under an applied load and ZnO thin films grown on GaN buffered Al2O3 substrates, exhibiting variations in film stability with changes to the Lateral Epitaxial Overgrowth architecture. The glass laminates were fabricated to contain periodic thin layers containing biaxial compressive stresses using ion exchange treatments to create residual compressive stresses at the surface of soda lime silicate glass sheets. Wafer direct bonding of the ion exchanged glass sheets resulted in the fabrication of glass laminates with thin layers of compressive stress adjacent to the glass interfaces. The threshold flexural strength of the ion exchanged glass laminates was determined to be 112 MPa after the introduction of indentation cracks with indent loads ranging from 1kg to 5kg and the laminates were found to exhibit a threshold strength, i.e., a stress below which failure will not occur. Contrary to similar ceramic laminates where cracks either propagate across the compressive layer or bifurcate within the compressive layer, the cracks in the glass laminates were deflected along the interface between the bonded sheets. ZnO films were grown on (0001) GaN buffered Al2O3 substrates by aqueous solution routes at 90°C. The films were found to buckle under compressive residual stresses at film thicknesses greater than 4mum. Lateral epitaxial overgrowth techniques using hexagonal hole arrays showed an increasing film stability with larger array spacing, resulting in film thicknesses up to 92mum. Stress determinations using Raman spectroscopy indicated that stress relaxation at the free surface during film growth played a major role in film stability. Investigations using Finite Element Analysis and Raman spectroscopy demonstrated that the strain energy within the film/substrate system decreased with increasing array spacing. ZnO films grown on III-nitride LED devices for use as transparent conducting layers showed intrinsic n-type doping, high transparency and adequate electrical contact resistance, resulting in linear light output with forward bias current and improved light extraction.

Group III nitride semiconductors for short wavelength light-emitting devices

NASA Astrophysics Data System (ADS)

Orton, J. W.; Foxon, C. T.

1998-01-01

The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of the visible region and extending well out into the ultraviolet (UV) range. They form a complete series of ternary alloys which, in principle, makes available any band gap within this range and the fact that they also generate efficient luminescence has been the main driving force for their recent technological development. High brightness visible light-emitting diodes (LEDs) are now commercially available, a development which has transformed the market for LED-based full colour displays and which has opened the way to many other applications, such as in traffic lights and efficient low voltage, flat panel white light sources. Continuously operating UV laser diodes have also been demonstrated in the laboratory, exciting tremendous interest for high-density optical storage systems, UV lithography and projection displays. In a remarkably short space of time, the nitrides have therefore caught up with and, in some ways, surpassed the wide band gap II-VI compounds (ZnCdSSe) as materials for short wavelength optoelectronic devices. The purpose of this paper is to review these developments and to provide essential background material in the form of the structural, electronic and optical properties of the nitrides, relevant to these applications. We have been guided by the fact that the devices so far available are based on the binary compound GaN (which is relatively well developed at the present time), together with the ternary alloys AlGaN and InGaN, containing modest amounts of Al or In. We therefore concentrate, to a considerable extent, on the properties of GaN, then introduce those of the alloys as appropriate, emphasizing their use in the formation of the heterostructures employed in devices. The nitrides crystallize preferentially in the hexagonal wurtzite structure and devices have so far been based on this material so the majority of our paper is concerned with it, however, the cubic, zinc blende form is known for all three compounds, and cubic GaN has been the subject of sufficient work to merit a brief account in its own right. There is significant interest based on possible technological advantages, such as easier doping, easier cleaving (for laser facets) and easier contacting. It also appears, at present, that the cubic form gives higher electron and hole mobilities than the hexagonal form. The dominant hexagonal structure is similar to that found in a number of II-VI compounds such as CdS and they can therefore be taken as role models. In particular, the lower symmetry gives rise to three separate valence bands at the zone centre and exciton spectra associated with each of these have been reported by many workers for GaN. Interpretation is complicated by the presence of strain in many samples due to the fact that most material consists of epitaxial thin films grown on non-lattice-matched substrates (bulk GaN crystals not being widely available). However, much progress has been made in understanding the physics of these films and we discuss the current position with regard to band gaps, effective masses, exciton binding energies, phonon energies, dielectric constants, etc. Apart from a lack of knowledge of the anticipated valence band anisotropy, it can be said that GaN is now rather well documented. Less detail is available for AlN or InN and we make no attempt to provide similar data for them. The structure of the paper is based on a historical introduction, followed by a brief account of the various crystal growth methods used to produce bulk GaN and epitaxial films of GaN and the ternary alloys. This is then followed by an account of the structural properties of hexagonal GaN as measured by x-ray diffraction and electron microscopy, phonon properties from infrared and Raman spectroscopy, electrical properties, with emphasis on n- and p-type doping, and optical properties, measured mainly by photoluminescence. A brief comparative account of cubic GaN properties follows. Discussion of alloy properties in the context of their use in quantum well and superlattice structures forms an introduction to the device sections which close the paper. These include details of the technology necessary for etching, contacting and forming laser facets, as an introduction to recent results on LEDs and laser diodes. Having described the current position, we speculate briefly on likely future developments.

Effects of Mn Ion Implantation on XPS Spectroscopy of GaN Thin Films

NASA Astrophysics Data System (ADS)

Majid, Abdul; Ahmad, Naeem; Rizwan, Muhammad; Khan, Salah Ud-Din; Ali, Fekri Abdulraqeb Ahmed; Zhu, Jianjun

2018-02-01

Gallium nitride (GaN) thin film was deposited onto a sapphire substrate and then implanted with 250 keV Mn ions at two different doses of 2 × 1016 ions/cm2 and 5 × 1016 ions/cm2. The as-grown and post-implantation-thermally-annealed samples were studied in detail using x-ray photoelectron spectroscopy (XPS). The XPS peaks of Ga 3 d, Ga 2 p, N 1 s, Mn 2 p and C 1 s were recorded in addition to a full survey of the samples. The doublet peaks of Ga 2 p for pure GaN were observed blue-shifted when compared with elemental Ga, and appeared further shifted to higher energies for the implanted samples. These observations point to changes in the bonds and the chemical environment of the host as a result of ion implantation. The results revealed broadening of the N 1 s peak after implantation, which is interpreted in terms of the presence of N-Mn bonds in addition to N-Ga bonds. The XPS spectra of Mn 2 p recorded for ion-implanted samples indicated splitting of Mn 2 p 1/2 and Mn 2 p 3/2 peaks higher than that for metallic Mn, which helps rule out the possibility of clustering and points to substitutional doping of Mn. These observations provide a framework that sheds light on the local environment of the material for understanding the mechanism of magnetic exchange interactions in Mn:GaN based diluted magnetic semiconductors.

Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uedono, Akira; Malinverni, Marco; Martin, Denis

Vacancy-type defects in Mg-doped GaN were probed using a monoenergetic positron beam. GaN films with a thickness of 0.5–0.7 μm were grown on GaN/sapphire templates using ammonia-based molecular beam epitaxy and characterized by measuring Doppler broadening spectra. Although no vacancies were detected in samples with a Mg concentration [Mg] below 7 × 10{sup 19 }cm{sup −3}, vacancy-type defects were introduced starting at above [Mg] = 1 × 10{sup 20 }cm{sup −3}. The major defect species was identified as a complex between Ga vacancy (V{sub Ga}) and multiple nitrogen vacancies (V{sub N}s). The introduction of vacancy complexes was found to correlate with a decreasemore » in the net acceptor concentration, suggesting that the defect introduction is closely related to the carrier compensation. We also investigated Mg-doped GaN layers grown using In as the surfactant. The formation of vacancy complexes was suppressed in the subsurface region (≤80 nm). The observed depth distribution of defects was attributed to the thermal instability of the defects, which resulted in the introduction of vacancy complexes during the deposition process.« less

Modification of structure and magnetic anisotropy of epitaxial CoFe₂O₄ films by hydrogen reduction

DOE PAGES

Chen, Aiping; Poudyal, Narayan; Xiong, Jie; ...

2015-03-16

Heteroepitaxial CoFe₂O₄ (CFO) thin films with different thicknesses were deposited on MgO (001) substrates. The as-deposited CFO films show a clear switching of magnetic anisotropy with increasing film thickness. The thinner films (<100 nm) show a perpendicular magnetic anisotropy due to the out-of-plane compressive strain. The thicker films exhibit an in-plane easy axis owing to the dominating shape anisotropy effect. The magnetostriction coefficient of CFO films is estimated to be λ[001] =-188 × 10⁻⁶. Metallic CoFe₂ films were obtained by annealing the as-deposited CFO films in forming gas (Ar 93% + H₂ 7%) at 450 °C. XRD shows that CoFe₂more » films are textured out-of-plane and aligned in-plane, owing to lattice matching between CoFe₂ and MgO substrate. TEM results indicate that as-deposited films are continuous while the annealed films exhibit a nanopore mushroom structure. The magnetic anisotropy of CoFe₂ films is dominated by the shape effect. The results demonstrate that hydrogen reduction can be effectively used to modify microstructures and physical properties of complex metal oxide materials.« less

High-fluence ion implantation in silicon carbide for fabrication of a compliant substrate

NASA Astrophysics Data System (ADS)

Lioubtchenko, Mikhail

GaN and related nitrides are promising materials for applications as UV/blue light emitters and in high-power, high-temperature electonic devices. Unfortunately, the vast potential of these materials cannot be realized effectively due to a large density of threading dislocations, arising from large lattice mismatch between GaN and utilized substrates. Therefore, a new approach to the heteroepitaxial growth is desirable, and a compliant substrate might help to remedy the situation. A modified model for the compliant substrate consisting of the compliant membrane glued to a thick handling substrate by a soft layer was proposed. We have chosen 6H-SiC as a starting substrate and ion implantation as a means of creating a buried layer. High fluence ion implantation of different species in 6H-SiC was performed at elevated temperatures and damage removal/accumulation was studied. It was found that temperatures around 1600°C are necessary to successfully recrystallize the radiation damage for Ti, Ga, Si and C implantations, but no damage removal was monitored for In implantation. In order to minimize the damage produced during ion implantation, it was decided to employ a multistep process in which each implantation step was followed by annealing. This approach was realized for 125 keV Ti++ and 300 keV Ga+ implantations up to a total dose of 1.8 x 1017 cm--2. Ti-implanted substrates were shown to retain good quality in the top layer, whereas Ga implantation preserves the quality of the near-surface region only at lower doses. The implanted species concentration was monitored after each step using Rutherford Backscattering (RBS). GaN films were grown on the prepared substrates and a control SiC sample by MOCVD. TEM and photoluminescence measurements have demonstrated that the quality of GaN films improves upon growth on compliant substrates.

The metalorganic chemical vapor deposition of III-V nitrides for optoelectronic device applications

NASA Astrophysics Data System (ADS)

Grudowski, Paul Alexander

Nitride-based light-emitting diodes (LEDs) and laser diodes are important for large-area LED displays, flat-panel displays, traffic signals, and optical data storage, due to their characteristic ultraviolet and visible light emission. However, much of the research and development addressing material related problems is recent. The room-temperature continuous wave (CW) operation of nitride-based laser diodes remains a major milestone because the material quality requirements for these devices are extremely high. This study investigates nitride material development by the metalorganic chemical vapor deposition (MOCVD) and characterization of GaN, AlGaN, and InGaN, and by qualifying these materials with fabricated devices. The ultimate goal was to develop a working laser diode. The nitride epitaxial films were characterized by 300K Hall effect, x-ray diffraction (XRD), photoluminescence (PL), cathodoluminescence (CL), secondary ion mass spectroscopy (SIMS), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). GaN grown heteroepitaxially on (0001) sapphire substrates was first optimized. A low-temperature GaN nucleation layer was developed that gave subsequent high-temperature GaN layers with low background carrier concentrations (n < 1×10sp{17}\\ cmsp{-3}). Intentional p-type hole concentrations up to 2× 10sp{18} cmsp{-3} and n-type electron concentrations up to 1× 10sp{19} cmsp{-3} were achieved at 300K with magnesium and silicon, respectively. The ternary alloy Insb{x}Gasb{1-x}N was grown with indium compositions up to x = 0.25. These films exhibited strong and narrow 300K PL bandedge peaks. Multiple-quantum-well structures with Insb{0.13}Gasb{0.87}N wells and Insb{0.03}Gasb{0.97}N barriers were grown and gave enhanced PL intensity compared to single InGaN layers. Modulation-doped MQW's produced enhanced PL intensity compared to uniformly-doped MQW's. 300K photopumping experiments produced stimulated emission from a five-period MQW. Light-emitting device structures comprised of InGaN MQW active regions and p-type and n-type GaN contact layers and AlGaN confinement layers were grown and fabricated. LED's showed bright emission at a wavelength of 400 nm. While optically pumped lasers were demonstrated, no injection lasing action was achieved in these devices. GaN grown by selective area lateral epitaxial overgrowth (SALEO) has reduced dislocation defect density and, therefore, may prove to be a promising substrate for nearly defect-free device structures. Plan-view and cross-sectional CL was used to compare spatial inhomogeneities in the bandedge luminescence.

Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Armstrong, Andrew M.; Aubry, Sylvie; Shaner, Eric Arthur

2010-09-01

We present the results of a three year LDRD project that focused on understanding the impact of defects on the electrical, optical and thermal properties of GaN-based nanowires (NWs). We describe the development and application of a host of experimental techniques to quantify and understand the physics of defects and thermal transport in GaN NWs. We also present the development of analytical models and computational studies of thermal conductivity in GaN NWs. Finally, we present an atomistic model for GaN NW electrical breakdown supported with experimental evidence. GaN-based nanowires are attractive for applications requiring compact, high-current density devices such asmore » ultraviolet laser arrays. Understanding GaN nanowire failure at high-current density is crucial to developing nanowire (NW) devices. Nanowire device failure is likely more complex than thin film due to the prominence of surface effects and enhanced interaction among point defects. Understanding the impact of surfaces and point defects on nanowire thermal and electrical transport is the first step toward rational control and mitigation of device failure mechanisms. However, investigating defects in GaN NWs is extremely challenging because conventional defect spectroscopy techniques are unsuitable for wide-bandgap nanostructures. To understand NW breakdown, the influence of pre-existing and emergent defects during high current stress on NW properties will be investigated. Acute sensitivity of NW thermal conductivity to point-defect density is expected due to the lack of threading dislocation (TD) gettering sites, and enhanced phonon-surface scattering further inhibits thermal transport. Excess defect creation during Joule heating could further degrade thermal conductivity, producing a viscous cycle culminating in catastrophic breakdown. To investigate these issues, a unique combination of electron microscopy, scanning luminescence and photoconductivity implemented at the nanoscale will be used in concert with sophisticated molecular-dynamics calculations of surface and defect-mediated NW thermal transport. This proposal seeks to elucidate long standing material science questions for GaN while addressing issues critical to realizing reliable GaN NW devices.« less

Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sinha, Neeraj; Department of Materials Science, Gulbarga University, Gulbarga 585106; Roul, Basanta, E-mail: basantaroul@gmail.com

2015-01-15

Highlights: • InGaN thin films were grown on GaN template by PAMBE. • InGaN films were characterized by HRXRD, SEM and PL and Raman spectroscopy. • The indium incorporation in single phase InGaN films was found to be 23%. • The I–V characteristic of the InGaN/GaN heterojunction shows rectifying behavior. • Log–log plot of the I–V characteristics indicates the presence of SCLC mechanism. - Abstract: InGaN epitaxial films were grown on GaN template by plasma-assisted molecular beam epitaxy. The composition of indium incorporation in single phase InGaN film was found to be 23%. The band gap energy of single phasemore » InGaN was found to be ∼2.48 eV. The current–voltage (I–V) characteristic of InGaN/GaN heterojunction was found to be rectifying behavior which shows the presence of Schottky barrier at the interface. Log–log plot of the I–V characteristics under forward bias indicates the current conduction mechanism is dominated by space charge limited current mechanism at higher applied voltage, which is usually caused due to the presence of trapping centers. The room temperature barrier height and the ideality factor of the Schottky junction were found to 0.76 eV and 4.9 respectively. The non-ideality of the Schottky junction may be due to the presence of high pit density and dislocation density in InGaN film.« less

Validity of Vegard’s rule for Al1-xInxN (0.08  <  x  <  0.28) thin films grown on GaN templates

NASA Astrophysics Data System (ADS)

Magalhães, S.; Franco, N.; Watson, I. M.; Martin, R. W.; O'Donnell, K. P.; Schenk, H. P. D.; Tang, F.; Sadler, T. C.; Kappers, M. J.; Oliver, R. A.; Monteiro, T.; Martin, T. L.; Bagot, P. A. J.; Moody, M. P.; Alves, E.; Lorenz, K.

2017-05-01

In this work, comparative x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) measurements allow a comprehensive characterization of Al1-xInxN thin films grown on GaN. Within the limits of experimental accuracy, and in the compositional range 0.08  <  x  <  0.28, the lattice parameters of the alloys generally obey Vegard’s rule, varying linearly with the InN fraction. Results are also consistent with the small deviation from linear behaviour suggested by Darakchieva et al (2008 Appl. Phys. Lett. 93 261908). However, unintentional incorporation of Ga, revealed by atom probe tomography (APT) at levels below the detection limit for RBS, may also affect the lattice parameters. Furthermore, in certain samples the compositions determined by XRD and RBS differ significantly. This fact, which was interpreted in earlier publications as an indication of a deviation from Vegard’s rule, may rather be ascribed to the influence of defects or impurities on the lattice parameters of the alloy. The wide-ranging set of Al1-xInxN films studied allowed furthermore a detailed investigation of the composition leading to lattice-matching of Al1-xInxN/GaN bilayers.

Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN

NASA Astrophysics Data System (ADS)

Gunning, Brendan; Lowder, Jonathan; Moseley, Michael; Alan Doolittle, W.

2012-08-01

Highly p-type GaN films with hole concentrations exceeding 6 × 1019 cm-3 grown by metal-modulated epitaxy are electrically characterized. Temperature-dependent Hall effect measurements at cryogenic temperatures reveal minimal carrier freeze-out in highly doped samples, while less heavily doped samples exhibited high resistivity and donor-compensated conductivity as is traditionally observed. Effective activation energies as low as 43 meV were extracted, and a maximum Mg activation efficiency of 52% was found. In addition, the effective activation energy was found to be negatively correlated to the hole concentration. These results indicate the onset of the Mott-Insulator transition leading to impurity band conduction.

Epitaxially grown BaM hexaferrite films having uniaxial axis in the film plane for self-biased devices

PubMed Central

Zhang, Xiaozhi; Meng, Siqin; Song, Dongsheng; Zhang, Yao; Yue, Zhenxing; Harris, Vincent G.

2017-01-01

Barium hexaferrite (BaM) films with in-plane c-axis orientation are promising and technically important materials for self-biased magnetic microwave devices. In this work, highly oriented BaM films with different thickness and an in-plane easy axis (c-axis) of magnetization were grown on a-plane single-crystal sapphire substrates by direct current magnetron sputtering. A procedure involving seed layers, layer-by-layer annealing was adopted to reduce the substrate-induced strains and allow for the growth of thick (~3.44 μm) films. The epitaxial growth of the BaM film on sapphire was revealed by high-resolution transmission electron microscopy with dislocations being observed at the film-substrate interface. The orientation was also verified by X-ray diffraction and more notably, polarized Raman scattering. The magnetic properties and ferromagnetic resonant frequencies were experimentally characterized by a vibrating sample magnetometry and a frequency-swept ferromagnetic resonant flip-chip technique, respectively. The micron-thick BaM films exhibited a large remanence ratio of 0.92 along in-plane easy axis and a small one of 0.09 for the in-plane hard axis loop measurement. The FMR frequency was 50.3 GHz at zero field and reached 57.9 GHz under a magnetic field of 3 kOe, indicating that the epitaxial BaM films with strong self-biased behaviors have good electromagnetic properties in millimeter-wave range. PMID:28276492

Epitaxially grown BaM hexaferrite films having uniaxial axis in the film plane for self-biased devices.

PubMed

Zhang, Xiaozhi; Meng, Siqin; Song, Dongsheng; Zhang, Yao; Yue, Zhenxing; Harris, Vincent G

2017-03-09

Barium hexaferrite (BaM) films with in-plane c-axis orientation are promising and technically important materials for self-biased magnetic microwave devices. In this work, highly oriented BaM films with different thickness and an in-plane easy axis (c-axis) of magnetization were grown on a-plane single-crystal sapphire substrates by direct current magnetron sputtering. A procedure involving seed layers, layer-by-layer annealing was adopted to reduce the substrate-induced strains and allow for the growth of thick (~3.44 μm) films. The epitaxial growth of the BaM film on sapphire was revealed by high-resolution transmission electron microscopy with dislocations being observed at the film-substrate interface. The orientation was also verified by X-ray diffraction and more notably, polarized Raman scattering. The magnetic properties and ferromagnetic resonant frequencies were experimentally characterized by a vibrating sample magnetometry and a frequency-swept ferromagnetic resonant flip-chip technique, respectively. The micron-thick BaM films exhibited a large remanence ratio of 0.92 along in-plane easy axis and a small one of 0.09 for the in-plane hard axis loop measurement. The FMR frequency was 50.3 GHz at zero field and reached 57.9 GHz under a magnetic field of 3 kOe, indicating that the epitaxial BaM films with strong self-biased behaviors have good electromagnetic properties in millimeter-wave range.

Adsorption induced modification of in-plane magnetic anisotropy in epitaxial Co and Fe/Co films on Fe(110)

NASA Astrophysics Data System (ADS)

Ślezak, M.; Ślezak, T.; Matlak, K.; DróŻdŻ, P.; Korecki, J.

2018-05-01

A study of in-plane magnetic anisotropy (MA) in epitaxial bcc Co films and Fe/Co bilayers on a Fe(110) surface is reported. Surface MA of as-deposited Co films and Fe/Co bilayers strongly depends on the Co (dCo) and Fe (dFe) thickness. Adsorption of residual gases drastically modifies in-plane MA of both Co films and Fe/Co bilayers. We present two dimensional MA maps in the (dCo, dFe) space for both as grown and adsorption-modified films. Our results indicate how to precisely engineer in-plane MA that can be controlled by dCo, dFe and is sensitive to the residual gas adsorption.

Optical Anisotropy and Waveguiding in Thin Films of a Conjugated Polymer Which Exhibits Stimulated Emission.

NASA Astrophysics Data System (ADS)

Miller, E. Kirk; McGehee, Michael; Diaz-Garcia, Maria; Srikant, V.; Heeger, Alan J.

1998-03-01

We report variable angle spectroscopic ellipsometry (VASE) measurements on thin films of poly(2-butyl-5(2-ethyl-hexyl)-1,4- phenylenevinylene) (BuEH-PPV) in the spectral region below the electronic absorption edge. We find that the films are best described as uniaxially anisotropic, with the optical axis perpendicular to the plane of the film, consistent with the notion that the polymer chains lie preferentially in the plane of the film. Due to the anisotropic distribution of chromophores, the in-plane index of refraction is found to be significantly higher and more dispersive than the out-of- plane index, implying a higher effective index for transverse-electric (TE) waveguide modes than for the corresponding transverse- magnetic (TM) modes. The implications of these data for amplified spontaneous emission (ASE) experiments and in-plane laser structures are discussed.

A 30 Mbps in-plane full-duplex light communication using a monolithic GaN photonic circuit

NASA Astrophysics Data System (ADS)

Gao, Xumin; Yuan, Jialei; Yang, Yongchao; Li, Yuanhang; Yuan, Wei; Zhu, Guixia; Zhu, Hongbo; Feng, Meixin; Sun, Qian; Liu, Yuhuai; Wang, Yongjin

2017-07-01

We propose, fabricate and characterize photonic integration of a InGaN/GaN multiple-quantum-well light-emitting diode (MQW-LED), waveguide, ring resonator and InGaN/GaN MQW-photodiode on a single chip, in which the photonic circuit is suspended by the support beams. Both experimental observations and simulation results illustrate the manipulation of in-plane light coupling and propagation by the waveguide and the ring resonator. The monolithic photonic circuit forms an in-plane data communication system using visible light. When the two suspended InGaN/GaN MQW-diodes simultaneously serve as the transmitter and the receiver, an in-plane full-duplex light communication is experimentally demonstrated with a transmission rate of 30 Mbps, and the superimposed signals are extracted using the self-interference cancellation method. The suspended photonic circuit creates new possibilities for exploring the in-plane full-duplex light communication and manufacturing complex GaN-based monolithic photonic integrations.

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

PubMed Central

Sang, Liwen; Liao, Meiyong; Sumiya, Masatomo

2013-01-01

Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications. PMID:23945739

Polycrystalline Ba0.6Sr0.4TiO3 thin films on r-plane sapphire: Effect of film thickness on strain and dielectric properties

NASA Astrophysics Data System (ADS)

Fardin, E. A.; Holland, A. S.; Ghorbani, K.; Akdogan, E. K.; Simon, W. K.; Safari, A.; Wang, J. Y.

2006-10-01

Polycrystalline Ba0.6Sr0.4TiO3 (BST) films grown on r-plane sapphire exhibit strong variation of in-plane strain over the thickness range of 25-400nm. At a critical thickness of ˜200nm, the films are strain relieved; in thinner films, the strain is tensile, while compressive strain was observed in the 400nm film. Microwave properties of the films were measured from 1to20GHz by the interdigital capacitor method. A capacitance tunability of 64% was observed in the 200nm film, while thinner films showed improved Q factor. These results demonstrate the possibility of incorporating frequency agile BST-based devices into the silicon on sapphire process.

Development of Advanced Ill-Nitride Materials

DTIC Science & Technology

2008-09-24

have continued to work on InN and related materials. During the last year, we have completed many of our basic materials studies and extended our...conductivity of InN films The origin of bulk electrons in In-face InN has been studied by considering the effects of both unintentionally incorporated... studied in In- and N-face InN films grown on GaN by plasma-assisted molecular beam epitaxy. The TD densities were determined by non-destructive x-ray

In-plane orientation and composition dependences of crystal structure and electrical properties of {100}-oriented Pb(Zr,Ti)O3 films grown on (100) Si substrates by metal organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Okamoto, Shoji; Sankara Rama Krishnan, P. S.; Okamoto, Satoshi; Yokoyama, Shintaro; Akiyama, Kensuke; Funakubo, Hiroshi

2017-10-01

In-plane orientation-controlled Pb(Zr x ,Ti1- x )O3 (PZT) films with a thickness of approximately 2 µm and a Zr/(Zr + Ti) ratio of 0.39-0.65 were grown on (100) Si substrates by pulsed metal-organic chemical vapor deposition (MOCVD). In-plane-oriented epitaxial PZT films and in-plane random fiber-textured PZT films with {100} out-of-plane orientation were grown on (100)c SrRuO3//(100)c LaNiO3//(100) CeO2//(100) YSZ//(100) Si and (100)c SrRuO3/(100)c LaNiO3/(111) Pt/TiO2/SiO2/(100) Si substrates, respectively. The effects of Zr/(Zr + Ti) ratio and in-plane orientation on the crystal structure, dielectric, ferroelectric, and piezoelectric properties of the films were systematically investigated. The X-ray diffraction measurement showed that the epitaxial PZT films had a higher volume fraction of (100) orientation than the fiber-textured PZT films in the tetragonal Zr/(Zr + Ti) ratio region. A large difference was not detected between the epitaxial films and the fiber-textured films for Zr/(Zr + Ti) ratio dependence of the dielectric constant, and remanent polarization. However, in the rhombohedral phase region [Zr/(Zr + Ti) = 0.65], coercive field was found to be 1.5-fold different between the epitaxial and fiber-textured PZT films. The maximum field-induced strains measured at 0-100 kV/cm by scanning atomic force microscopy were obtained at approximately Zr/(Zr + Ti) = 0.50 and were about 0.5 and 0.3% for the epitaxial and fiber-textured PZT films, respectively.

Polycrystalline Superconducting Thin Films: Texture Control and Critical Current Density

NASA Astrophysics Data System (ADS)

Yang, Feng

1995-01-01

The growth processes of polycrystalline rm YBa_2CU_3O_{7-X} (YBCO) and yttria-stabilized-zirconia (YSZ) thin films have been developed. The effectiveness of YSZ buffer layers on suppression of the reaction between YBCO thin films and metallic substrates was carefully studied. Grown on the chemically inert surfaces of YSZ buffer layers, YBCO thin films possessed good quality of c-axis alignment with the c axis parallel to the substrate normal, but without any preferred in-plane orientations. This leads to the existence of a large percentage of the high-angle grain boundaries in the YBCO films. The critical current densities (rm J_{c}'s) found in these films were much lower than those in single crystal YBCO thin films, which was the consequence of the weak -link effect of the high-angle grain boundaries in these films. It became clear that the in-plane alignment is vital for achieving high rm J_{c }s in polycrystalline YBCO thin films. To induce the in-plane alignment, ion beam-assisted deposition (IBAD) technique was integrated into the conventional pulsed laser deposition process for the growth of the YSZ buffer layers. It was demonstrated that using IBAD the in-plane orientations of the YSZ grains could be controlled within a certain range of a common direction. This ion -bombardment induced in-plane texturing was explained using the anisotropic sputtering yield theory. Our observations and analyses have provided valuable information on the optimization of the IBAD process, and shed light on the texturing mechanism in YSZ. With the in-plane aligned YSZ buffer layers, YBCO thin films grown on metallic substrates showed improved rm J_{c}s. It was found that the in-plane alignment of YSZ and that of YBCO were closely related. A direct correlation was revealed between the rm J_{c} value and the degree of the in-plane alignment for the YBCO thin films. To explain this correlation, a numerical model was applied to multi-grain superconducting paths with different textures to determine the expected rm J_{c}s. The good agreement between the experimental data and numerical results confirmed that the rm J_{c} improvement directly resulted from the reduction of the number of high-angle grain boundaries in the in-plane aligned polycrystalline YBCO thin films, and provided a guideline on the further improvement of the rm J_ {c}s of polycrystalline YBCO thin films.

Transport properties and c/a ratio of V{sub 2}O{sub 3} thin films grown on C- and R-plane sapphire substrates by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sakai, Joe; Limelette, Patrice; Funakubo, Hiroshi

2015-12-14

We prepared V{sub 2}O{sub 3} thin films on C- or R-plane sapphire (Al{sub 2}O{sub 3}) substrates by a pulsed laser deposition method. X-ray diffraction analyses confirmed that single-phase V{sub 2}O{sub 3} films were epitaxially grown on both C- and R-planes under an Ar gas ambient of 2 × 10{sup −2} mbar at a substrate temperature of 873 K. Depending on the deposition conditions, c/a ratios at room temperature of (0001)-oriented V{sub 2}O{sub 3} films widely ranged from 2.79 to 2.88. Among them, the films of 2.81 ≤ c/a ≤ 2.84 showed complex metal (M)–insulator (I)–M transition during cooling from 300 to 10 K, while those of larger c/a ratiosmore » were accompanied by metallic properties throughout this temperature range. All the films on R-plane substrates underwent simple M-I transition at ∼150 K, which was more abrupt than the films on C-plane, whereas their c/a ratios were narrowly distributed. The distinct difference of M-I transition properties between C- and R-plane films is explained by the intrinsic a- and c-axes evolution through the transition from M to I phases.« less

Enhanced light extraction from free-standing InGaN/GaN light emitters using bio-inspired backside surface structuring.

PubMed

Pynn, Christopher D; Chan, Lesley; Lora Gonzalez, Federico; Berry, Alex; Hwang, David; Wu, Haoyang; Margalith, Tal; Morse, Daniel E; DenBaars, Steven P; Gordon, Michael J

2017-07-10

Light extraction from InGaN/GaN-based multiple-quantum-well (MQW) light emitters is enhanced using a simple, scalable, and reproducible method to create hexagonally close-packed conical nano- and micro-scale features on the backside outcoupling surface. Colloidal lithography via Langmuir-Blodgett dip-coating using silica masks (d = 170-2530 nm) and Cl 2 /N 2 -based plasma etching produced features with aspect ratios of 3:1 on devices grown on semipolar GaN substrates. InGaN/GaN MQW structures were optically pumped at 266 nm and light extraction enhancement was quantified using angle-resolved photoluminescence. A 4.8-fold overall enhancement in light extraction (9-fold at normal incidence) relative to a flat outcoupling surface was achieved using a feature pitch of 2530 nm. This performance is on par with current photoelectrochemical (PEC) nitrogen-face roughening methods, which positions the technique as a strong alternative for backside structuring of c-plane devices. Also, because colloidal lithography functions independently of GaN crystal orientation, it is applicable to semipolar and nonpolar GaN devices, for which PEC roughening is ineffective.

In-plane microwave dielectric properties of paraelectric barium strontium titanate thin films with anisotropic epitaxy

NASA Astrophysics Data System (ADS)

Simon, W. K.; Akdogan, E. K.; Safari, A.; Bellotti, J. A.

2005-08-01

In-plane dielectric properties of ⟨110⟩ oriented epitaxial (Ba0.60Sr0.40)TiO3 thin films in the thickness range from 25-1200nm have been investigated under the influence of anisotropic epitaxial strains from ⟨100⟩ NdGaO3 substrates. The measured dielectric properties show strong residual strain and in-plane directional dependence. Below 150nm film thickness, there appears to be a phase transition due to the anisotropic nature of the misfit strain relaxation. In-plane relative permittivity is found to vary from as much as 500-150 along [11¯0] and [001] respectively, in 600nm thick films, and from 75 to 500 overall. Tunability was found to vary from as much as 54% to 20% in all films and directions, and in a given film the best tunability is observed along the compressed axis in a mixed strain state, 54% along [11¯0] in the 600nm film for example.

Ohmic contacts to n-GaN formed by ion-implanted Si into p-GaN

NASA Astrophysics Data System (ADS)

Bao, Xichang; Xu, Jintong; Zhang, Wenjing; Wang, Ling; Chu, Kaihui; Li, Chao; Li, Xiangyang

2009-07-01

In this paper, we report the ohmic contact to n-GaN fabricated by implanting silicon into Mg-doped GaN using an alloy of Ti/Al/Ti/Au metallization. The used materials were grown on (001) sapphire substrates by metal-organic chemical-vapor deposition (MOCVD). The layer structure was comprised of a GaN buffer layer and followed by a 2 μm thickness Mg-doped GaN (Na=5×1017cm-3) and then double silicon implantation was performed in order to convert p-type GaN into n-type GaN films. The as-implanted samples were then thermal annealed at 1150 °C for 5 min in N2 ambient. The carrier concentration and Hall mobility were 3.13×1018 cm3 and 112 cm2/ (VÂ.s) measured by Hall method. Multilayer electrode of Ti (50 nm)/Al (50 nm)/Ti (30 nm)/Au (30 nm) was deposited on n-GaN using an electron-beam evaporation and contacts were formed by a N2 annealing technique ranging from 600 to 900 °C. After annealing lower than 700 °C, the contacts exhibited a rectifying behavior and became ohmic contact only after high temperature processes (>=700 °C). Specific contact resistance was as low as 9.58×10-4 ΩÂ.cm2 after annealing at 800 °C for 60 seconds. While annealing temperature is higher than 800 °C, the specific contact resistance becomes worse. This phenomenon is caused by the surface morphology degradation.

Growth and characterization of MnAu2 films

NASA Astrophysics Data System (ADS)

Cheng, S. F.; Bussmann, K. M.

2017-01-01

MnAu2 films ranging from 60 to 200 nm thickness are deposited by co-sputtering from elemental targets. X-ray diffraction confirmed these films to be nearly single phase with tetragonal lattice parameters of a=0.336 nm and c=0.872 nm that compare well to the bulk values of a=0.336 nm and c=0.876 nm. The density of the films is analyzed using x-ray reflectivity to be 14.95 g/cm3 and within experimental error of previously determined value of 15.00 g/cm3. The films grown on c-plane sapphire, (100)MgO and (100)MgF2 are randomly oriented polycrystalline, while the films grown on a-plane sapphire, (111)MgO and (111)Si/(0001)AlN showed that the (110) plane is parallel to the film plane and there are three sets of domains in equal amount differing by 60° in-plane rotation. Magnetic order is found to become paramagnetic near 360 K which is in close proximity to the bulk value. There are deviations in the slope of hysteresis loops observed at 10 K around 10 kOe that indicate complex magnetic switching.

Advanced processing of gallium nitride and gallium nitride-based devices: Ultra-high temperature annealing and implantation incorporation

NASA Astrophysics Data System (ADS)

Yu, Haijiang

This dissertation is focused on three fields: ultra-high temperature annealing of GaN, activation of implanted GaN and the implantation incorporation into AlGaN/GaN HEMT processing, with an aim to increase the performance, manufacturability and reliability of AlGaN/GaN HEMTs. First, the ultra high temperature (around 1500°C) annealing of MOCVD grown GaN on sapphire has been studied, and a thermally induced threading dislocation (TD) motion and reaction are reported. Using a rapid thermal annealing (RTA) approach capable of heating 2 inch wafers to around 1500°C with 100 bar N2 over-pressure, evidence of dislocation motion was first observed in transmission electron microscopy (TEM) micrographs of both planar and patterned GaN films protected by an AIN capping layer. An associated decrease in x-ray rocking curve (XRC) full-width-half-maximum (FWHM) was also observed for both the symmetric and asymmetric scans. After annealing, the AIN capping layer remained intact, and optical measurements showed no degradation of the opto-electronic properties of the films. Then activation annealing of Si implants in MOCVD grown GaN has been studied for use in ohmic contacts. Si was implanted in semi-insulating GaN at 100 keV with doses from 5 x 1014 cm-2 to 1.5 x 1016 cm-2. Rapid thermal annealing at 1500°C with 100 bar N2 over-pressure was used for dopant activation, resulting in a minimum sheet resistance of 13.9 O/square for a dose of 7 x 1015 cm-2. Secondary ion mass spectroscopy measurements showed a post-activation broadening of the dopant concentration peak by 20 nm (at half the maximum), while X-Ray triple axis o-2theta scans indicated nearly complete implant damage recovery. Transfer length method measurements of the resistance of Ti/Al/Ni/Au contacts to activated GaN:Si (5 x 1015 cm-2 at 100 keV) indicated lowest contact resistances of 0.07 Omm and 0.02 Omm for as-deposited and subsequently annealed contacts, respectively. Finally, the incorporation of Si implantation into AlGaN/GaN high electron mobility transistor processing has been first demonstrated. An ultra-high temperature (1500°C) rapid thermal annealing technique was developed for the activation of Si dopants implanted in the source and drain. In comparison to control devices processed by conventional fabrication, the implanted device with nonalloyed ohmic contact showed comparable device performance with a contact resistance of 0.4 Omm Imax 730 mA/mm ft/f max; 26/62 GHz and power 3.4 W/mm on sapphire. These early results demonstrate the feasibility of implantation incorporation into GaN based device processing as well as the potential to increase yield, reproducibility and reliability in AlGaN/GaN HEMTs.

Single-Crystalline, Nanoporous Gallium Nitride Films With Fine Tuning of Pore Size for Stem Cell Engineering.

PubMed

Han, Lin; Zhou, Jing; Sun, Yubing; Zhang, Yu; Han, Jung; Fu, Jianping; Fan, Rong

2014-11-01

Single-crystalline nanoporous gallium nitride (GaN) thin films were fabricated with the pore size readily tunable in 20-100 nm. Uniform adhesion and spreading of human mesenchymal stem cells (hMSCs) seeded on these thin films peak on the surface with pore size of 30 nm. Substantial cell elongation emerges as pore size increases to ∼80 nm. The osteogenic differentiation of hMSCs occurs preferentially on the films with 30 nm sized nanopores, which is correlated with the optimum condition for cell spreading, which suggests that adhesion, spreading, and stem cell differentiation are interlinked and might be coregulated by nanotopography.

Propagation of magnetostatic spin waves in an yttrium iron garnet film for out-of-plane magnetic fields

NASA Astrophysics Data System (ADS)

Bang, Wonbae; Lim, Jinho; Trossman, Jonathan; Tsai, C. C.; Ketterson, John B.

2018-06-01

We have observed the propagation of spin waves across a thin yttrium iron garnet film on (1 1 1) gadolinium gallium garnet for magnetic fields inclined with respect to the film plane. Two principle planes were studied: that for H in the plane defined by the wave vector k and the plane normal, n, with limiting forms corresponding to the Backward Volume and Forward Volume modes, and that for H in the plane perpendicular to k, with limiting forms corresponding to the Damon-Eshbach and Forward Volume modes. By exciting the wave at one edge of the film and observing the field dependence of the phase of the received signal at the opposing edge we determined the frequency vs. wavevector relation, ω = ω (k), of various propagating modes in the film. Avoided crossings are observed in the Damon-Eshbach and Forward Volume regimes when the propagating mode intersects the higher, exchange split, volume modes, leading to an extinction of the propagating mode; analysis of the resulting behavior allows a determination of the exchange parameter. The experimental results are compared with theoretical simulations.

Structure and Composition of Isolated Core-Shell (In ,Ga )N /GaN Rods Based on Nanofocus X-Ray Diffraction and Scanning Transmission Electron Microscopy

NASA Astrophysics Data System (ADS)

Krause, Thilo; Hanke, Michael; Nicolai, Lars; Cheng, Zongzhe; Niehle, Michael; Trampert, Achim; Kahnt, Maik; Falkenberg, Gerald; Schroer, Christian G.; Hartmann, Jana; Zhou, Hao; Wehmann, Hergo-Heinrich; Waag, Andreas

2017-02-01

Nanofocus x-ray diffraction is used to investigate the structure and local strain field of an isolated (In ,Ga )N /GaN core-shell microrod. Because the high spatial resolution of the x-ray beam is only 80 ×90 nm2, we are able to investigate several distinct volumes on one individual side facet. Here, we find a drastic increase in thickness of the outer GaN shell along the rod height. Additionally, we performed high-angle annular dark-field scanning-transmission-electron-microscopy measurements on several rods from the same sample showing that (In,Ga)N double-quantum-well and GaN barrier thicknesses also increase strongly along the height. Moreover, plastic relaxation is observed in the top part of the rod. Based on the experimentally obtained structural parameters, we simulate the strain-induced deformation using the finite-element method, which serves as the input for subsequent kinematic scattering simulations. The simulations reveal a significant increase of elastic in-plane relaxation along the rod height. However, at a certain height, the occurrence of plastic relaxation yields a decrease of the elastic strain. Because of the experimentally obtained structural input for the finite-element simulations, we can exclude unknown structural influences on the strain distribution, and we are able to translate the elastic relaxation into an indium concentration which increases by a factor of 4 from the bottom to the height where plastic relaxation occurs.

Simultaneous determination of the residual stress, elastic modulus, density and thickness of ultrathin film utilizing vibrating doubly clamped micro-/nanobeams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stachiv, Ivo, E-mail: stachiv@fzu.cz; Institute of Physics, Czech Academy of Sciences, Prague; Kuo, Chih-Yun

2016-04-15

Measurement of ultrathin film thickness and its basic properties can be highly challenging and time consuming due to necessity of using several very sophisticated devices. Here, we report an easy accessible resonant based method capable to simultaneously determinate the residual stress, elastic modulus, density and thickness of ultrathin film coated on doubly clamped micro-/nanobeam. We show that a general dependency of the resonant frequencies on the axial load is also valid for in-plane vibrations, and the one depends only on the considered vibrational mode. As a result, we found that the film elastic modulus, density and thickness can be evaluatedmore » from two measured in-plane and out-plane fundamental resonant frequencies of micro-/nanobeam with and without film under different prestress forces. Whereas, the residual stress can be determined from two out-plane (in-plane) measured consecutive resonant frequencies of beam with film under different prestress forces without necessity of knowing film and substrate properties and dimensions. Moreover, we also reveal that the common uncertainties in force (and thickness) determination have a negligible (and minor) impact on the determined film properties. The application potential of the present method is illustrated on the beam made of silicon and SiO{sub 2} with deposited 20 nm thick AlN and 40 nm thick Au thin films, respectively.« less

Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire.

PubMed

Lin, Hui-Feng; Wu, Chun-Te; Chien, Wei-Cheng; Chen, Sheng-Wen; Kao, Hui-Ling; Chyi, Jen-Inn; Chen, Jyh-Shin

2005-05-01

Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300 degrees C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and use their semiconducting, optoelectronic, and piezoelectric properties.

Thermal conductivity model for nanoporous thin films

NASA Astrophysics Data System (ADS)

Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui

2018-03-01

Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.

Cyan laser diode grown by plasma-assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Turski, H., E-mail: henryk@unipress.waw.pl; Muziol, G.; Wolny, P.

We demonstrate AlGaN-cladding-free laser diodes (LDs), operating in continuous wave (CW) mode at 482 nm grown by plasma-assisted molecular beam epitaxy (PAMBE). The maximum CW output power was 230 mW. LDs were grown on c-plane GaN substrates obtained by hydride vapor phase epitaxy. The PAMBE process was carried out in metal-rich conditions, supplying high nitrogen flux (Φ{sub N}) during quantum wells (QWs) growth. We found that high Φ{sub N} improves quality of high In content InGaN QWs. The role of nitrogen in the growth of InGaN on (0001) GaN surface as well as the influence of LDs design on threshold currentmore » density are discussed.« less

Direct Observation of the BCC (100) Plane in Thin Films of Sphere-forming Diblock Copolymers

NASA Astrophysics Data System (ADS)

Ji, Shengxiang; Nagpal, Umang; Liao, Wen; de Pablo, Juan; Nealey, Paul

2010-03-01

In sphere-forming diblock copolymers, periodic arrays of spheres are arranged in a body-centred cubic (BCC) lattice structure in bulk. However, in thin films different surface morphologies were observed as a function of the film thickness, and the transition from the hexagonal array to the BCC (110) arrangement of spheres on film surfaces was located with respect to the increase of the film thickness. Here we report the first direct observation of the BCC (100) plane in thin films of poly (styrene-b-methyl methacrylate) diblock copolymers on homogeneous substrates. By balancing the surface energies of both blocks, the lower energy BCC (100) plane corresponding to a square arrangement of half spheres, formed on film surfaces when the film thickness was commensurate with the spacing, L100, between (100) planes or greater than 2 L100. A hexagonal arrangement of spheres was only observed when the thickness was less than 2 L100 and incommensurate with 1 L100. Monte Carlo (MC) simulation confirmed our experimental observation and was used to investigate the transition of the arrangement of spheres as a function of the film thickness.

Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties

NASA Astrophysics Data System (ADS)

Gao, Qingxue; Liu, Rong; Xiao, Hongdi; Cao, Dezhong; Liu, Jianqiang; Ma, Jin

2016-11-01

A strong phase-separated InGaN/GaN layer, which consists of multiple quantum wells (MQW) and superlattices (SL) layers and can produce a blue wavelength spectrum, has been grown on n-GaN thin film, and then fabricated into nanoporous structures by electrochemical etching method in oxalic acid. Scanning electron microscopy (SEM) technique reveals that the etching voltage of 8 V leads to a vertically aligned nanoporous structure, whereas the films etched at 15 V show branching pores within the n-GaN layer. Due to the low doping concentration of barriers (GaN layers) in the InGaN/GaN layer, we observed a record-low rate of etching (<100 nm/min) and nanopores which are mainly originated from the V-pits in the phase-separated layer. In addition, there exists a horizontal nanoporous structure at the interface between the phase-separated layer and the n-GaN layer, presumably resulting from the high transition of electrons between the barrier and the well (InGaN layer) at the interface. As compared to the as-grown MQW structure, the etched MQW structure exhibits a photoluminescence (PL) enhancement with a partial relaxation of compressive stress due to the increased light-extracting surface area and light-guiding effect. Such a compressive stress relaxation can be further confirmed by Raman spectra.

Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls

NASA Astrophysics Data System (ADS)

Hartmann, Jana; Steib, Frederik; Zhou, Hao; Ledig, Johannes; Nicolai, Lars; Fündling, Sönke; Schimpke, Tilman; Avramescu, Adrian; Varghese, Tansen; Trampert, Achim; Straßburg, Martin; Lugauer, Hans-Jürgen; Wehmann, Hergo-Heinrich; Waag, Andreas

2017-10-01

GaN fins are 3D architectures elongated in one direction parallel to the substrate surface. They have the geometry of walls with a large height to width ratio as well as small footprints. When appropriate symmetry directions of the GaN buffer are used, the sidewalls are formed by non-polar {1 1 -2 0} planes, making the fins particularly suitable for many device applications like LEDs, FETs, lasers, sensors or waveguides. The influence of growth parameters like temperature, pressure, V/III ratio and total precursor flow on the fin structures is analyzed. Based on these results, a 2-temperature-step-growth was developed, leading to fins with smooth side and top facets, fast vertical growth rates and good homogeneity along their length as well as over different mask patterns. For the core-shell growth of fin LED heterostructures, the 2-temperature-step-growth shows much smoother sidewalls and less crystal defects in the InGaN QW and p-GaN shell compared to structures with cores grown in just one step. Electroluminescence spectra of the 2-temperature-step-grown fin LED are demonstrated.

M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.

PubMed

Koester, Robert; Hwang, Jun-Seok; Salomon, Damien; Chen, Xiaojun; Bougerol, Catherine; Barnes, Jean-Paul; Dang, Daniel Le Si; Rigutti, Lorenzo; de Luna Bugallo, Andres; Jacopin, Gwénolé; Tchernycheva, Maria; Durand, Christophe; Eymery, Joël

2011-11-09

Nonpolar InGaN/GaN multiple quantum wells (MQWs) grown on the {11-00} sidewalls of c-axis GaN wires have been grown by organometallic vapor phase epitaxy on c-sapphire substrates. The structural properties of single wires are studied in detail by scanning transmission electron microscopy and in a more original way by secondary ion mass spectroscopy to quantify defects, thickness (1-8 nm) and In-composition in the wells (∼16%). The core-shell MQW light emission characteristics (390-420 nm at 5 K) were investigated by cathodo- and photoluminescence demonstrating the absence of the quantum Stark effect as expected due to the nonpolar orientation. Finally, these radial nonpolar quantum wells were used in room-temperature single-wire electroluminescent devices emitting at 392 nm by exploiting sidewall emission.

Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE

NASA Astrophysics Data System (ADS)

Turski, Henryk; Muzioł, Grzegorz; Siekacz, Marcin; Wolny, Pawel; Szkudlarek, Krzesimir; Feduniewicz-Żmuda, Anna; Dybko, Krzysztof; Skierbiszewski, Czeslaw

2018-01-01

Doping of Ga(Al)N layers by plasma-assisted molecular beam epitaxy in Ga-rich conditions on c-plane bulk GaN substrates was studied. Ga(Al)N samples, doped with Mg or Si, grown using different growth conditions were compared. In contrast to Si doped layers, no change in the Mg concentration was observed for layers grown using different growth rates for a constant Mg flux and constant growth temperature. This effect enables the growth of Ga(Al)N:Mg layers at higher growth rates, leading to shorter growth time and lower residual background doping, without the need of increasing Mg flux. Enhancement of Mg incorporation for Al containing layers was also observed. Change of Al content from 0% to 17% resulted in more than two times higher Mg concentration.

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

PubMed Central

Ma, Dingyu; Rong, Xin; Zheng, Xiantong; Wang, Weiying; Wang, Ping; Schulz, Tobias; Albrecht, Martin; Metzner, Sebastian; Müller, Mathias; August, Olga; Bertram, Frank; Christen, Jürgen; Jin, Peng; Li, Mo; Zhang, Jian; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Ge, Weikun; Shen, Bo; Wang, Xinqiang

2017-01-01

We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) InxGa1−xN layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular beam epitaxy (MBE), and an excellent in-plane uniformity in this layer was confirmed by cathodoluminescence mapping study. The carrier dynamics have also been investigated by time-resolved and excitation-power-dependent photoluminescence, proving that the recombination occurs via confined excitons within the ultrathin quasi-2D InGaN layer even at high temperature up to ~220 K due to the enhanced exciton binding energy. This work indicates that such structure affords an interesting opportunity for developing high-performance photonic devices. PMID:28417975

Thermal conductivity of mesoporous films measured by Raman spectroscopy

NASA Astrophysics Data System (ADS)

Stoib, B.; Filser, S.; Petermann, N.; Wiggers, H.; Stutzmann, M.; Brandt, M. S.

2014-04-01

We measure the in-plane thermal conductance of mesoporous Ge and SiGe thin films using the Raman-shift method and, based on a finite differences simulation accounting for the geometry of the sample, extract the in-plane thermal conductivity. For a suspended thin film of laser-sintered SiGe nanoparticles doped with phosphorus, we find an effective in-plane thermal conductivity of 0.05 W/m K in vacuum for a temperature difference of 400 K and a mean temperature of 500 K. Under similar conditions, the effective in-plane thermal conductivity of a laser-sintered undoped Ge nanoparticle film is 0.5 W/m K. Accounting for a porosity of approximately 50%, the normalized thermal conductivities are 0.1 W/m K and 1 W/m K, respectively. The thermoelectric performance is discussed, considering that the electrical in-plane conductivity is also affected by the mesoporosity.

Mechanisms of Loss in Internal Quantum Efficiency in III-Nitride-based Blue-and Green-Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Huang, Li

The overarching goals of the research conducted for this dissertation have been to understand the scientific reasons for the losses in the internal quantum efficiency (IQE) in Group III-nitride-based blue and especially green light-emitting diodes (LEDs) containing a multi-quantum well (MQW) active region and to simultaneously develop LED epitaxial structures to ameliorate these losses. The p-type AlGaN EBL was determined to be both mandatory and effective in the prevention of electron overflow from the MQW region into the p-type cladding layer and the resultant lowering of the IQE. The overflow phenomenon was partially due to the low concentration (˜ 5 x 1017 cm-3) and mobility (˜ 10 cm2/(V•s)) of the holes injected into the active region. Electroluminescence (EL) studies of LEDs without an EBL revealed a dominant emission from donor-acceptor pair recombination in the p-type GaN layer. The incorporation of a 90 nm compositionally graded In0-0.1 Ga1-0.9N buffer layer between each MQW and n-GaN cladding layer grown on an Al/SiC substrate resulted in an increase in the luminescence intensity and a blue-shift in the emission wavelength, as observed in photoluminescence (PL) spectra. The graded InGaN buffer layer reduced the stress and thus the piezoelectric field across the MQW; this improved the electron/hole overlap that, in turn, resulted in an enhanced radiative recombination rate and an increase in efficiency. A direct correlation was observed between an increase in the IQE measured in temperature-dependent PL (TDPL) and an increase in the roughness of all the upper InGaN QW/GaN barrier interfaces, as determined using cross-sectional transmission electron microscopy of the MQW. These results agreed in general with the average surface roughness values of the pit-free region on the top GaN barrier determined via atomic force microscopy and the average roughness values of all the interfaces in the MQW calculated from the FWHM of the emission peak in the PL spectra acquired at 10 K for LED structures grown on both SiC and GaN substrates. This improvement occurred as a result of carrier localization at the rougher interfaces that, in turn, resulted in shorter carrier lifetimes and faster decay rates, as determined using time-resolved PL. The peak current densities determined from the curves of external quantum efficiency as a function of current density calculated from EL spectra acquired from a set of LEDs having 3 QWs, 5 QWs, and 6 QWs were 63 A/cm2, 78 A/cm2 and 78 A/cm2, respectively. These data indicated that the minority carrier (holes) in our powered devices penetrated into at least the 4th QW from the top p-type cladding layer. The peak emission from these LEDs occurred at 522 nm. The hole density decreased with distance away from the top p-type layer. Finally, a new process route was developed in this research for the epitaxial deposition of GaN(0001) thin films on chemo-mechanically polished GaN(0001) substrates. The latter possessed threading dislocations (TDs) having a density of the order of 5 x 107 cm-2, predominantly edge in character and oriented along [0001]. Step-flow-controlled growth of the films was achieved; thus, no additional TDs were generated at the film/substrate interface. The density of V-defects in InGaN films and in subsequently grown MQWs containing In0.26Ga0.74N wells grown on the GaN substrates was also reduced to within an order of 107 cm -2. The density of the latter defects was determined to be a function of both the density of the TDs and the growth temperature when the latter was > 900 °C. (Abstract shortened by UMI.)

Magnetic properties of in-plane oriented barium hexaferrite thin films prepared by direct current magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Xiaozhi; Yue, Zhenxing, E-mail: yuezhx@mail.tsinghua.edu.cn; Meng, Siqin

2014-12-28

In-plane c-axis oriented Ba-hexaferrite (BaM) thin films were prepared on a-plane (112{sup ¯}0) sapphire (Al{sub 2}O{sub 3}) substrates by DC magnetron sputtering followed by ex-situ annealing. The DC magnetron sputtering was demonstrated to have obvious advantages over the traditionally used RF magnetron sputtering in sputtering rate and operation simplicity. The sputtering power had a remarkable influence on the Ba/Fe ratio, the hematite secondary phase, and the grain morphology of the as-prepared BaM films. Under 80 W of sputtering power, in-plane c-axis highly oriented BaM films were obtained. These films had strong magnetic anisotropy with high hysteresis loop squareness (M{sub r}/M{sub s}more » of 0.96) along the in-plane easy axis and low M{sub r}/M{sub s} of 0.03 along the in-plane hard axis. X-ray diffraction patterns and pole figures revealed that the oriented BaM films grew via an epitaxy-like growth process with the crystallographic relationship BaM (101{sup ¯}0)//α-Fe{sub 2}O{sub 3}(112{sup ¯}0)//Al{sub 2}O{sub 3}(112{sup ¯}0)« less

Direct Heteroepitaxial Growth of ZnO over GaN Crystal in Aqueous Solution

NASA Astrophysics Data System (ADS)

Hamada, Takahiro; Ito, Akihiro; Nagao, Nobuaki; Suzuki, Nobuyasu; Fujii, Eiji; Tsujimura, Ayumu

2013-04-01

We report on the structural and electrical properties of ZnO films grown on surface-treated GaN/Al2O3 substrates by chemical bath deposition. X-ray diffraction analysis indicated that the ZnO films had a single-crystalline wurtzite structure with c-axis orientation. The ZnO film exhibited n-type conduction with a carrier concentration of 6.9 ×1018 cm-3, an electron mobility of 41 cm2/(V.s), and a resistivity of 2.2 ×10-2 Ω.cm. A low specific contact resistivity of 4.3 ×10-3 Ω.cm2 was obtained at the ZnO/n-GaN interface. Additionally, the ZnO film exhibited high transparency in the visible and infrared region.