Science.gov

Sample records for a-plane zno films

  1. Ultraviolet Photoconductive Detectors Based on A-Plane ZnO Film Grow by Hydrothermal Method

    NASA Astrophysics Data System (ADS)

    Yu, Naisen; Dong, Dapeng; Qi, Yan; Wu, Yunfeng; Chen, Lu

    2016-02-01

    A-plane ZnO film was grown on a-plane GaN/r-sapphire template by using the hydrothermal growth method. The film was characterized for the structural and morphological properties by means of x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The results show the a-plane ZnO film with a very uniform striated morphology was achieved. Meanwhile, an ultraviolet (UV) photoconductive detector based on the as-grown a-plane film was fabricated, and the detector current was increased by more than 17 times under 5 V bias upon UV illumination. Moreover, it also showed good reproducibility and stability, which confirms the film as a good potential material for UV optoelectronic devices.

  2. Growth study of nonpolar Zn{sub 1-x}Mg{sub x}O epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Laumer, Bernhard; Schuster, Fabian; Stutzmann, Martin; Bergmaier, Andreas; Dollinger, Guenther; Vogel, Stephen; Gries, Katharina I.; Volz, Kerstin; Eickhoff, Martin

    2012-09-17

    Nonpolar Zn{sub 1-x}Mg{sub x}O epitaxial films were grown by plasma-assisted molecular beam epitaxy on a-plane ZnO substrates. A smooth surface morphology was accomplished under oxygen-rich growth conditions. The benefits of the use of ZnO substrates on the structural properties are reflected by a low-density of threading dislocations. Furthermore, no indications for the generation of basal plane stacking faults are found. The pseudomorphic growth on a-plane ZnO substrates efficiently locks the epitaxial Zn{sub 1-x}Mg{sub x}O films to the wurtzite structure up to x = 0.25. The Mg concentration is not constant and increases with larger thickness. The optical properties reflect the influence of alloy disorder.

  3. Lattice strains and polarized luminescence in homoepitaxial growth of a-plane ZnO

    NASA Astrophysics Data System (ADS)

    Matsui, Hiroaki; Tabata, Hitoshi

    2012-12-01

    In-plane lattice strains in a-plane zinc oxide (ZnO) homoepitaxial layers were selectively introduced by changing substrate type and growth conditions. Strain-free layers were observed when using a Crystec ZnO substrate, which resulted in atomically flat surfaces with nano-facets consisting of the m-plane (10-10) at atomic scale. In contrast, ZnO layers on Goodwill ZnO substrates possessed in-plane lattice strains due to generation of basal-plane stacking faults. The degree of lattice strains was systematically changed by the oxygen pressure, which clarified the close correlation between photoluminescence (PL) polarization and lattice strains. The polarization ratio of PL enhanced with the lattice strains.

  4. Homoepitaxial ZnO Film Growth

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, C-H; Lehoczky, S. L.; Harris, M. T.; Callahan, M. J.; McCarty, P.; George, M. A.; Rose, M. Franklin (Technical Monitor)

    2000-01-01

    ZnO films have high potential for many applications, such as surface acoustic wave filters, UV detectors, and light emitting devices due to its structural, electrical, and optical properties. High quality epitaxial films are required for these applications. The Al2O3 substrate is commonly used for ZnO heteroepitaxial growth. Recently, high quality ZnO single crystals are available for grow homoepitaxial films. Epitaxial ZnO films were grown on the two polar surfaces (O-face and Zn-face) of (0001) ZnO single crystal substrates using off-axis magnetron sputtering deposition. As a comparison, films were also deposited on (0001) Al2O3 substrates. It was found that the two polar ZnO surfaces have different photoluminescence (PL) spectrum, surface structure and morphology, which strongly influence the epitaxial film growth. The morphology and structure of homoepitaxial films grown on the ZnO substrates were different from heteroepitaxial films grown on the Al2O3. An interesting result shows that high temperature annealing of ZnO single crystals will improve the surface structure on the O-face surface rather than the opposite surface. The measurements of PL, low-angle incident x-ray diffraction, and atomic force microscopy of ZnO films indicate that the O-terminated surface is better for ZnO epitaxial film growth.

  5. Homoepitaxial ZnO Film Growth

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, C-H; Lehoczky, S. L.; Harris, M. T.; Callahan, M. J.; McCarty, P.; George, M. A.; Rose, M. Franklin (Technical Monitor)

    2000-01-01

    ZnO films have high potential for many applications, such as surface acoustic wave filters, UV detectors, and light emitting devices due to its structural, electrical, and optical properties. High quality epitaxial films are required for these applications. The Al2O3 substrate is commonly used for ZnO heteroepitaxial growth. Recently, high quality ZnO single crystals are available for grow homoepitaxial films. Epitaxial ZnO films were grown on the two polar surfaces (O-face and Zn-face) of (0001) ZnO single crystal substrates using off-axis magnetron sputtering deposition. As a comparison, films were also deposited on (0001) Al2O3 substrates. It was found that the two polar ZnO surfaces have different photoluminescence (PL) spectrum, surface structure and morphology, which strongly influence the epitaxial film growth. The morphology and structure of homoepitaxial films grown on the ZnO substrates were different from heteroepitaxial films grown on the Al2O3. An interesting result shows that high temperature annealing of ZnO single crystals will improve the surface structure on the O-face surface rather than the opposite surface. The measurements of PL, low-angle incident x-ray diffraction, and atomic force microscopy of ZnO films indicate that the O-terminated surface is better for ZnO epitaxial film growth.

  6. Experimental and theoretical study of polarized photoluminescence caused by anisotropic strain relaxation in nonpolar a-plane textured ZnO grown by a low-pressure chemical vapor deposition

    SciTech Connect

    Lai, Chih-Ming; Huang, Yu-En; Feng, Shih-Wei; Kou, Kuang-Yang; Chen, Chien-Hsun; Tu, Li-Wei

    2015-07-13

    Anisotropic strain relaxation and the resulting degree of polarization of photoluminescence (PL) in nonpolar a-plane textured ZnO are experimentally and theoretically studied. A thicker nonpolar a-plane textured ZnO film enhances the anisotropic in-plane strain relaxation, resulting in a larger degree of polarization of PL and better sample quality. Anisotropic in-plane strains, sample quality, and degree of polarization of PL in nonpolar a-plane ZnO are consequences of the degree of anisotropic in-plane strain relaxation. By the k·p perturbation approach, simulation results of the variation of the degree of polarization for the electronic transition upon anisotropic in-plane strain relaxation agree with experimental results.

  7. Engineering of optical polarization based on electronic band structures of A-plane ZnO layers under biaxial strains

    SciTech Connect

    Matsui, Hiroaki Tabata, Hitoshi; Hasuike, Noriyuki; Harima, Hiroshi

    2014-09-21

    In-plane anisotropic strains in A-plane layers on the electronic band structure of ZnO were investigated from the viewpoint of optical polarization anisotropy. Investigations utilizing k·p perturbation theory revealed that energy transitions and associated oscillation strengths were dependent on in-plane strains. The theoretical correlation between optical polarizations and in-plane strains was experimentally demonstrated using A-plane ZnO layers with different in-plane strains. Finally, optical polarization anisotropy and its implications for in-plane optical properties are discussed in relation to the energy shift between two orthogonal directions. Higher polarization rotations were obtained in an A-plane ZnO layer with in-plane biaxially compressive strains as compared to strain-free ZnO. This study provides detailed information concerning the role played by in-plane strains in optically polarized applications based on nonpolar ZnO in the ultra-violet region.

  8. Thin film epitaxy and structure property correlations for non-polar ZnO films

    SciTech Connect

    Pant, Punam; Budai, John D; Aggarwal, R; Narayan, Roger; Narayan, Jagdish

    2009-01-01

    Heteroepitaxial growth and strain relaxation were investigated in non-polar a-plane (11-20)ZnO films grown on r-plane (10-12)sapphire substrates in the temperature range 200-700 C by pulsed laser deposition. The lattice misfit in the plane of the film for this orientation varied from -1.26% in [0001] to ?18.52% in the [-1100] direction. The alignment of (11-20)ZnO planes parallel to (10-12)sapphire planes was confirmed by X-ray diffraction {theta}-2{theta} scans over the entire temperature range. X-ray {psi}-scans revealed the epitaxial relationship:[0001]ZnO[-1101]sap; [-1100]ZnO[-1-120]sap. Depending on the growth temperature, variations in the structural, optical and electrical properties were observed in the grown films. Room temperature photoluminescence for films grown at 700 C shows a strong band-edge emission. The ratio of the band-edge emission to green band emission is 135:1, indicating reduced defects and excellent optical quality of the films. The resistivity data for the films grown at 700 C shows semiconducting behavior with room temperature resistivity of 2.2 x 10{sup -3} {Omega}-cm.

  9. Anisotropic optical properties of free and bound excitons in highly strained A-plane ZnO investigated with polarized photoreflectance and photoluminescence spectroscopy

    NASA Astrophysics Data System (ADS)

    Nam, Yoon Sung; Lee, Sang Wook; Baek, K. S.; Chang, S. K.; Song, Jae-Ho; Song, Jung-Hoon; Han, Seok Kyu; Hong, Soon-Ku; Yao, Takafumi

    2008-05-01

    We have investigated the polarization dependence of the near-band-edge photoluminescence and photoreflectance spectra in nonpolar (A-plane) ZnO films under strong biaxial compressive strain. We show that anisotropic strain and the orientation of the nonpolar plane play an important role in determining the polarization selectivity and properties of excitonic transitions. We identified four distinct band-edge transitions at 3.449, 3.420, 3.386, and 3.326eV. They were identified as E2 and E1 free excitons, E1 excitons bound to a donor, and free-electron-to-bound-hole transition, respectively. Unlike previously reported results on relatively thick nonpolar films, the E1 exciton (lowest energy) was mainly polarized to E ⊥c and weakly polarized to E ∥c under strong biaxial compressive strain in the 100nm thick film. The E2 exciton (next higher energy) was exclusively polarized to E ∥c. The localization energy of DX is 34meV, which is much larger than that in polar ZnO, and the DX was not thermally delocalized even at room temperature.

  10. Dye-Sensitization Of Nanocrystalline ZnO Thin Films

    SciTech Connect

    Ajimsha, R. S.; Tyagi, M.; Das, A. K.; Misra, P.; Kukreja, L. M.

    2010-12-01

    Nannocrystalline and nanoporus thin films of ZnO were synthesized on glass substrates by using wet chemical drop casting method. X-ray diffraction measurements on these samples confirmed the formation of ZnO nanocrystallites in hexagonal wurtzite phase with mean size of {approx}20 nm. Photo sensitization of these nanostructured ZnO thin films was carried out using three types of dyes Rhodamine 6 G, Chlorophyll and cocktail of Rhodamine 6 G and Chlorophyll in 1:1 ratio. Dye sensitized ZnO thin films showed enhanced optical absorption in visible spectral region compared to the pristine ZnO thin films.

  11. Synthesis and characterization of ZnO thin films

    SciTech Connect

    Anilkumar, T. S.; Girija, M. L.; Venkatesh, J.

    2016-05-06

    Zinc oxide (ZnO) Thin films were deposited on glass substrate using Spin coating method. Zinc acetate dehydrate, Carbinol and Mono-ethanolamine were used as the precursor, solvent and stabilizer respectively to prepare ZnO Thin-films. The molar ratio of Monoethanolamine to Zinc acetate was maintained as approximately 1. The thickness of the films was determined by Interference technique. The optical properties of the films were studied by UV Vis-Spectrophotometer. From transmittance and absorbance curve, the energy band gap of ZnO is found out. Electrical Conductivity measurements of ZnO are carried out by two probe method and Activation energy for the electrical conductivity of ZnO are found out. The crystal structure and orientation of the films were analyzed by XRD. The XRD patterns show that the ZnO films are polycrystalline with wurtzite hexagonal structure.

  12. Synthesis and characterization of ZnO thin films

    NASA Astrophysics Data System (ADS)

    Anilkumar T., S.; Girija M., L.; Venkatesh, J.

    2016-05-01

    Zinc oxide (ZnO) Thin films were deposited on glass substrate using Spin coating method. Zinc acetate dehydrate, Carbinol and Mono-ethanolamine were used as the precursor, solvent and stabilizer respectively to prepare ZnO Thin-films. The molar ratio of Monoethanolamine to Zinc acetate was maintained as approximately 1. The thickness of the films was determined by Interference technique. The optical properties of the films were studied by UV Vis-Spectrophotometer. From transmittance and absorbance curve, the energy band gap of ZnO is found out. Electrical Conductivity measurements of ZnO are carried out by two probe method and Activation energy for the electrical conductivity of ZnO are found out. The crystal structure and orientation of the films were analyzed by XRD. The XRD patterns show that the ZnO films are polycrystalline with wurtzite hexagonal structure.

  13. Optically Active Nanostructured ZnO Films.

    PubMed

    Duan, Yingying; Han, Lu; Zhang, Jialiang; Asahina, Shunsuke; Huang, Zhehao; Shi, Lin; Wang, Bo; Cao, Yuanyuan; Yao, Yuan; Ma, Liguo; Wang, Cui; Dukor, Rina K; Sun, Lu; Jiang, Chun; Tang, Zhiyong; Nafie, Laurence A; Che, Shunai

    2015-12-07

    Inorganic nanomaterials endowed with hierarchical chirality could open new horizons in physical theory and applications because of their fascinating properties. Here, we report chiral ZnO films coated on quartz substrates with a hierarchical nanostructure ranging from atomic to micrometer scale. Three levels of hierarchical chirality exist in the ZnO films: helical ZnO crystalline structures that form primary helically coiled nanoplates, secondary helical stacking of these nanoplates, and tertiary nanoscale circinate aggregates formed by several stacked nanoplates. These films exhibited optical activity (OA) at 380 nm and in the range of 200-800 nm and created circularly polarized luminescence centered at 510 nm and Raman OA at 50-1400 cm(-1) , which was attributed to electronic transitions, scattering, photoluminescent emission, and Raman scattering in a dissymmetric electric field. The unprecedented strong OA could be attributed to multiple light scattering and absorption-enhanced light harvesting in the hierarchical structures. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Substrate Preparations in Epitaxial ZnO Film Growth

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, C.-H.; Lehoczky, S. L.; Harris, M. T.; Callahan, M. J.; George, M. A.

    2000-01-01

    Epitaxial ZnO films were grown on the two polar surfaces (O-face and Zn-face) of (0001) ZnO single crystal substrates using off-axis magnetron sputtering deposition. Annealing-temperature dependence of ZnO substrates was studied. ZnO films grown on sapphire substrates have also been investigated for comparison purposes and the annealing temperature of A1203 substrates is 1000 C. Substrates and films were characterized using photoluminescence (PL) spectrum, x-ray diffraction, atomic force microscope, energy dispersive spectrum, and electric transport measurements. It has been found that the ZnO film properties were different when films were grown on the two polarity surfaces of ZnO substrates and the A1203 substrates. An interesting result shows that high temperature annealing of ZnO single crystals will improve the surface structure on the O-face surface rather than the opposite surface. The measurements of homoepitaxial ZnO films indicate that the O-terminated surface is better for ZnO epitaxial film growth.

  15. Strong circular photogalvanic effect in ZnO epitaxial films

    SciTech Connect

    Zhang, Q.; Wang, X. Q.; Yin, C. M.; Shen, B.; Chen, Y. H.; Chang, K.; Ge, W. K.

    2011-12-23

    A strong circular photogalvanic effect (CPGE) in ZnO epitaxial films was reported under interband excitation. It was observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

  16. Strong circular photogalvanic effect in ZnO epitaxial films

    NASA Astrophysics Data System (ADS)

    Zhang, Q.; Wang, X. Q.; Yin, C. M.; Shen, B.; Chen, Y. H.; Chang, K.; Ge, W. K.

    2011-12-01

    A strong circular photogalvanic effect (CPGE) in ZnO epitaxial films was reported under interband excitation. It was observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

  17. Strong circular photogalvanic effect in ZnO epitaxial films

    NASA Astrophysics Data System (ADS)

    Zhang, Q.; Wang, X. Q.; Yin, C. M.; Xu, F. J.; Tang, N.; Shen, B.; Chen, Y. H.; Chang, K.; Ge, W. K.; Ishitani, Y.; Yoshikawa, A.

    2010-07-01

    We report a strong circular photogalvanic effect (CPGE) in ZnO epitaxial films under interband excitation. It is observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

  18. Self-standing particle-binding ZnO film.

    PubMed

    Masuda, Yoshitake; Kato, Kazumi

    2009-01-01

    Self-standing particle-binding ZnO film was fabricated by combination of crystallization in aqueous solution and annealing on FTO (SnO2:F) coated glass substrate. Multi-needle ZnO particles crystallized in a solution of zinc nitrate hexahydrate and ethylenediamine at 60 degrees C. Crystalline particles having an ultrafine surface relief structure were gradually deposited on the substrate to form thick particulate film. The film was then annealed at 950 degrees C for 1 h in air. The ZnO particles formed necks to connect to each other. The glass substrate deformed into a dome shape generating stress between the ZnO film and substrate; on the other hand, FTO layers retained their uneven surface during annealing. ZnO particulate film was successfully peeled off from the substrate as self-standing film. Deformation of glass substrate and FTO joint-insulating layer supported peeling-off of the film. The connected ZnO particles formed continuous white porous film having many spaces and continuous open pores surrounded by multi-needle ZnO particles. The film can be used as self-standing film and be pasted on substrate such as polymer film, metal or paper for application to flexible lightweight devices.

  19. Growth of Homoepitaxial ZnO Semiconducting Films

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, Ching-Hua; Lehoczky, S. L.; Harris, M. T.; George, Michael A.; McCarty, P.

    1999-01-01

    As a high temperature semiconductor, ZnO has been used for many applications such as wave-guide, solar cells, and surface acoustic wave devices. Since the ZnO material has an energy gap of 3.3 eV at room temperature and an excitonic binding energy (60 meV) that is possible to make excitonic lasering at room temperature a recent surge of interest is to synthesize ZnO films for electro-optical devices. These applications require films with a smooth surface, good crystal quality, and low defect density. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystals are grown by the hydrothermal method. Substrates are mechanically polished and annealed in air for four hours before deposited films. The annealing temperature-dependence of ZnO substrates is studied. Films are synthesized by the off-axis reactive sputtering deposition. The films have very smooth surface with a roughness film theta rocking curves measured by the x-ray diffraction is slightly larger than the crystal substrate. The film quality is determined by measuring the film resistivity, the Hall mobility, carrier densities and the energy band gap. The properties of ZnO films grown of (0001) ZnO and (0001) sapphire substrates will be also compared and discussed in the presentation.

  20. Liquid crystal alignment on ZnO nanostructure films

    NASA Astrophysics Data System (ADS)

    Chung, Yueh-Feng; Chen, Mu-Zhe; Yang, Sheng-Hsiung; Jeng, Shie-Chang

    2016-03-01

    The study of liquid crystal (LC) alignment is important for fundamental researches and industrial applications. The tunable pretilt angles of liquid crystal (LC) molecules aligned on the inorganic zinc oxide (ZnO) nanostructure films with controllable surface wettability are demonstrated in this work. The ZnO nanostructure films are deposited on the ITO- glass substrates by the two-steps hydrothermal process, and their wettability can be modified by annealing. Our experimental results show that the pretilt angles of LCs on ZnO nanostructure films can be successfully adjusted over a wide range from ~90° to ~0° as the surface energy on the ZnO nanostructure films changes from ~30 to ~70 mJ/m. Finally we have applied this technique to fabricate a no-bias optically-compensated bend (OCB) LCD with ZnO nanostructure films annealed at 235 °C.

  1. Green emission in carbon doped ZnO films

    SciTech Connect

    Tseng, L. T.; Yi, J. B. Zhang, X. Y.; Xing, G. Z.; Luo, X.; Li, S.; Fan, H. M.; Herng, T. S.; Ding, J.; Ionescu, M.

    2014-06-15

    The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60–100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR) and low temperature photoluminescence (PL) measurement.

  2. Growth of vertically aligned ZnO nanorods using textured ZnO films

    PubMed Central

    2011-01-01

    A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD) is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100) substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.) PMID:21899743

  3. Nanostructured ZnO Films for Room Temperature Ammonia Sensing

    NASA Astrophysics Data System (ADS)

    Dhivya Ponnusamy; Sridharan Madanagurusamy

    2014-09-01

    Zinc oxide (ZnO) thin films have been deposited by a reactive dc magnetron sputtering technique onto a thoroughly cleaned glass substrate at room temperature. X-ray diffraction revealed that the deposited film was polycrystalline in nature. The field emission scanning electron micrograph (FE-SEM) showed the uniform formation of a rugby ball-shaped ZnO nanostructure. Energy dispersive x-ray analysis (EDX) confirmed that the film was stoichiometric and the direct band gap of the film, determined using UV-Vis spectroscopy, was 3.29 eV. The ZnO nanostructured film exhibited better sensing towards ammonia (NH3) at room temperature (˜30°C). The fabricated ZnO film based sensor was capable of detecting NH3 at as low as 5 ppm, and its parameters, such as response, selectivity, stability, and response/recovery time, were also investigated.

  4. Second harmonic generation from ZnO films and nanostructures

    NASA Astrophysics Data System (ADS)

    Larciprete, Maria Cristina; Centini, Marco

    2015-09-01

    Zinc oxide ZnO is a n-type semiconductor having a wide direct band gap (3.37 eV) as well as a non-centrosymmetric crystal structure resulting from hexagonal wurtzite phase. Its wide transparency range along with its second order nonlinear optical properties make it a promising material for efficient second harmonic generation processes and nonlinear optical applications in general. In this review, we present an extensive analysis of second harmonic generation from ZnO films and nanostructures. The literature survey on ZnO films will include some significant features affecting second harmonic generation efficiency, as crystalline structure, film thickness, surface contributes, and doping. In a different section, the most prominent challenges in harmonic generation from ZnO nanostructures are discussed, including ZnO nanowires, nanorods, and nanocrystals, to name a few. Similarly, the most relevant works regarding third harmonic generation from ZnO films and nanostructures are separately addressed. Finally, the conclusion part summarizes the current standing of published values for the nonlinear optical coefficients and for ZnO films and nanostructures, respectively.

  5. Li doped ZnO thin films for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Sandeep, K. M.; Bhat, Shreesha; Serrao, F. J.; Dharmaprakash, S. M.

    2016-05-01

    We have prepared undoped (ZnO) and Li doped ZnO (LZO) thin films using cost effective sol gel spin coating method.The structural properties were analyzed by X-ray diffraction, and it showed that Li ions occupied interstitial positions in the LZO film. The optical properties like band bending effect, absorption length, band edge sharpness, which have direct impact on solar cell performance has been calculated. The room temperature photoluminescence spectra of the films showed dominant blue emission with CIE coordinate numbers (0.1384, 0.0836) for ZnO and (0.1356, 0.0910) for LZO. The dominating wavelength of the blue emission is present at 470.9 nm and 472.3 nm for ZnO and LZO films respectively. The structural and optical parameters determined in the present study could be used in LED applications.

  6. Li doped ZnO thin films for optoelectronic applications

    SciTech Connect

    Sandeep, K. M. Bhat, Shreesha; Serrao, F. J.; Dharmaprakash, S. M.

    2016-05-23

    We have prepared undoped (ZnO) and Li doped ZnO (LZO) thin films using cost effective sol gel spin coating method.The structural properties were analyzed by X-ray diffraction, and it showed that Li ions occupied interstitial positions in the LZO film. The optical properties like band bending effect, absorption length, band edge sharpness, which have direct impact on solar cell performance has been calculated. The room temperature photoluminescence spectra of the films showed dominant blue emission with CIE coordinate numbers (0.1384, 0.0836) for ZnO and (0.1356, 0.0910) for LZO. The dominating wavelength of the blue emission is present at 470.9 nm and 472.3 nm for ZnO and LZO films respectively. The structural and optical parameters determined in the present study could be used in LED applications.

  7. Growth of Homoepitaxial ZnO Semiconducting Films

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, C.-H.; Lehoczky, S. L.; Harris, M. T.; George, M. A.; McCarty, P.

    1999-01-01

    As a high temperature wide-band-gap (3.3 eV at room temperature) semiconductor, ZnO has been used for many applications such as wave-guides, solar cells, and surface acoustic wave devices, Since ZnO has a 60 meV excitonic binding energy that makes it possible to produce excitonic lasing at room temperature, a recent surge of interest is to synthesize ZnO films for UV/blue/green laser diodes. These applications require films with a smooth surface, good crystal quality, and low defect density. Thus, homoepitaxial film growth is the best choice. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystal substrates grown by the hydrothermal method are mechanically polished and annealed in air for four hours before the films are deposited. The annealing temperature-dependence on ZnO substrate morphology and electrical properties is investigated. Films are synthesized by off-axis reactive sputtering deposition. This produces films that have very smooth surfaces with roughness less than or equal to 5 nm on a 5 microns x 5 microns area. The full width at half maximum of film theta rocking curves measured by the x-ray diffraction is slightly larger than that of the crystal substrate. Films are also characterized by measuring resistivity, optical transmittance, and photoluminescence. The properties of ZnO films grown on (0001) ZnO and (0001) sapphire substrates will also be compared and discussed.

  8. ZnO Thin Film Ga s Sensor for CO

    SciTech Connect

    Manap, Y. A.; Ismail, B.; Yusuf, M. N. M.; Shamsuri, W. N. W.; Wahab, Y.; Othaman, Z.

    2010-03-11

    ZnO thin films were deposited onto corning glass substrates by rf magnetron sputtering system using ZnO targets. Films were deposited under rf power of 80 W at various deposition time. The distance between the target and substrate was held at 45 cm. A mixed Ar and O{sub 2} gas was introduced into the chamber at 4x10{sup -2} Torr. The structure of the deposited ZnO films was investigated by Scanning electron miscroscopy. The gas sensing properties were evaluated at various operation temperatures by measuring the changes of resistance of the sensor in air and in CO gas respectively using the gas sensing characterization system. The grain size was increased as the film thickness was increased during deposition. The sensor with 233 nm film thickness exhibited the highest sensitivity for CO gas.

  9. The sprayed ZnO films: nanostructures and physical parameters

    NASA Astrophysics Data System (ADS)

    Benhaliliba, M.; Tiburcio-Silver, A.; Avila-Garcia, A.; Tavira, A.; Ocak, Y. S.; Aida, M. S.; Benouis, C. E.

    2015-08-01

    We synthesized the pure and indium-doped (IZO) ZnO films with a facile composition control spray pyrolysis route. The substrate temperature (Ts) and In-doping effects on the properties of as-grown films are investigated. The X-ray pattern confirms that the as-synthesized ZnO phase is grown along a (002) preferential plane. It is revealed that the crystalline structure is improved with a substrate temperature of 350 °C. Moreover, the morphology of as-grown films, analyzed by AFM, shows nanostructures that have grown along the c-axis. The (3 × 3 μm2) area scanned AFM surface studies give the smooth film surface RMS < 40 nm. The UV-VIS-IR measurements reveal that the sprayed films are highly transparent in the visible and IR bands. The photoluminescence analysis shows that the strong blue and yellow luminescences of 2.11 and 2.81 eV are emitted from ZnO and IZO films with a slight shift in photon energy caused by In-doping. The band gap is a bit widened by In-doping, 3.21 eV (ZnO) and 3.31 eV (IZO) and the resistivity is reduced from 385 to 8 Ω·m. An interesting result is the resistivity linear dependence on the substrate temperature of pure ZnO films.

  10. Improved Response of ZnO Films for Pyroelectric Devices

    PubMed Central

    Hsiao, Chun-Ching; Yu, Shih-Yuan

    2012-01-01

    Increasing the temperature variation rate is a useful method for enhancing the response of pyroelectric devices. A three-dimensional ZnO film was fabricated by the aerosol deposition (AD) rapid process using the shadow mask method, which induces lateral temperature gradients on the sidewalls of the responsive element, thereby increasing the temperature variation rate. To enhance the quality of the film and reduce the concentration of defects, the film was further treated by laser annealing, and the integration of a comb-like top electrode enhanced the voltage response and reduced the response time of the resulting ZnO pyroelectric devices. PMID:23235444

  11. Physical states and properties of barium titanate films in a plane electric field

    NASA Astrophysics Data System (ADS)

    Shirokov, V. B.; Kalinchuk, V. V.; Shakhovoi, R. A.; Yuzyuk, Yu. I.

    2016-07-01

    The influence of a plane electric field on the phase states of barium titanate thin films under the conditions of forced deformation has been studied. The field dependence of a complete set of material constants has been taken in the region of the c-phase, where polarization losses are absent. The material constants are calculated using equations of the piezoelectric effect derived by linearizing the nonlinear equations of state from the phenomenological; theory for barium titanate. It has been shown that there is a critical value of the field at which the electromechanical coupling coefficient reaches a maximum.

  12. Nanostructured hybrid ZnO thin films for energy conversion

    PubMed Central

    2011-01-01

    We report on hybrid films based on ZnO/organic dye prepared by electrodeposition using tetrasulfonated copper phthalocyanines (TS-CuPc) and Eosin-Y (EoY). Both the morphology and porosity of hybrid ZnO films are highly dependent on the type of dyes used in the synthesis. High photosensitivity was observed for ZnO/EoY films, while a very weak photoresponse was obtained for ZnO/TS-CuPc films. Despite a higher absorption coefficient of TS-CuPc than EoY, in ZnO/EoY hybrid films, the excited photoelectrons between the EoY levels can be extracted through ZnO, and the porosity of ZnO/EoY can also be controlled. PMID:21711909

  13. ZnO Thin Film Electronics for More than Displays

    NASA Astrophysics Data System (ADS)

    Ramirez, Jose Israel

    Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow

  14. A high power ZnO thin film piezoelectric generator

    NASA Astrophysics Data System (ADS)

    Qin, Weiwei; Li, Tao; Li, Yutong; Qiu, Junwen; Ma, Xianjun; Chen, Xiaoqiang; Hu, Xuefeng; Zhang, Wei

    2016-02-01

    A highly efficient and large area piezoelectric ZnO thin film nanogenerator (NG) was fabricated. The ZnO thin film was deposited onto a Si substrate by pulsed laser ablation at a substrate temperature of 500 °C. The deposited ZnO film exhibited a preferred c-axis orientation and a high piezoelectric value of 49.7 pm/V characterized using Piezoelectric Force Microscopy (PFM). Thin films of ZnO were patterned into rectangular power sources with dimensions of 0.5 × 0.5 cm2 with metallic top and bottom electrodes constructed via conventional semiconductor lithographic patterning processes. The NG units were subjected to periodic bending/unbending motions produced by mechanical impingement at a fixed frequency of 100 Hz at a pressure of 0.4 kg/cm2. The output electrical voltage, current density, and power density generated by one ZnO NG were recorded. Values of ∼95 mV, 35 μA cm-2 and 5.1 mW cm-2 were recorded. The level of power density is typical to that produced by a PZT NG on a flexible substrate. Higher energy NG sources can be easily created by adding more power units either in parallel or in series. The thin film ZnO NG technique is highly adaptable with current semiconductor processes, and as such, is easily integrated with signal collecting circuits that are compatible with mass production. A typical application would be using the power harvested from irregular human foot motions to either to operate blue LEDs directly or to drive a sensor network node in mille-power level without any external electric source and circuits.

  15. Growth of ZnO and GaN Films

    NASA Astrophysics Data System (ADS)

    Chang, J.; Hong, S.-K.; Matsumoto, K.; Tokunaga, H.; Tachibana, A.; Lee, S. W.; Cho, M.-W.

    . Zinc oxide (ZnO) and gallium nitride (GaN) are wide bandgap semi conductors applicable to light emitting diodes (LEDs) and laser diodes (LDs) with wavelengths ranging from ultraviolet to blue light. Now ZnO and GaN are key ma terials for optoelectronic device applications and their applications are being rapidly expanded to lots of other technology including electronics, biotechnology, nanotech-nology, and fusion technology among all these. As a fundamental starting point for the development of this new technique, epitaxy of ZnO and GaN films is one of the most important key technology. Hence, development of the growth technique for high quality epitaxial films is highly necessary. Among the various kinds of epi taxy technique for semiconductor films developed so far, physical vapor deposition (PVD)-based epitaxy technique has been revealed to be the appropriate way for the high quality ZnO film and related alloy growths, while chemical vapor deposition (CVD)-based epitaxy technique has been proved to be the best method for the high quality GaN film and related alloy growths.

  16. The frequency-dependent AC photoresistance behavior of ZnO thin films grown on different sapphire substrates.

    PubMed

    Cholula-Díaz, Jorge L; Barzola-Quiquia, José; Videa, Marcelo; Yin, Chunhai; Esquinazi, Pablo

    2017-09-13

    Zinc oxide (ZnO) thin films were grown by pulsed layer deposition under an N2 atmosphere at low pressures on a- and r-plane sapphire substrates. Structural studies using X-ray diffraction confirmed that all films had a wurtzite phase. ZnO thin films on a- and r-plane sapphire have grown with orientations along the [0002] and [112[combining macron]0] directions, respectively. Room temperature photoluminescence measurements indicate that the presence of native point defects (interstitial zinc, oxygen vacancies, oxygen antisites and zinc vacancies) is more preponderant for ZnO thin films grown on the r-plane sapphire substrate than the sample grown on the a-plane sapphire substrate. Room temperature impedance spectroscopy measurements were performed in an alternating current frequency range from 40 to 10(5) Hz in the dark and under normal light. An unusual positive photoresistance effect is observed at frequencies above 100 kHz, which we suggest to be due to intrinsic defects present in the ZnO thin films. Furthermore, an analysis of the optical time response revealed that the film grown on the r-plane sapphire substrate responds faster (characteristic relaxation times for τ1, τ2 and τ3 of 0.05, 0.26 and 6.00 min, respectively) than the film grown on the a-plane sapphire substrate (characteristic relaxation times for τ1, τ2 and τ3 of 0.10, 0.73 and 4.02 min, respectively).

  17. Growth of vertically aligned one-dimensional ZnO nanowire arrays on sol-gel derived ZnO thin films

    NASA Astrophysics Data System (ADS)

    Kitazawa, Nobuaki; Aono, Masami; Watanabe, Yoshihisa

    2014-11-01

    Vertically aligned one-dimensional ZnO nanowire arrays have been synthesized by a hydrothermal method on sol-gel derived ZnO films. Sol-gel derived ZnO films and corresponding ZnO nanowire arrays have been characterized by X-ray diffraction and field-emission scanning electron microscopy. The effect of sol-gel derived ZnO film surface on the morphology of ZnO nanowire arrays has been investigated. The authors suggest from our investigation that sol-gel derived ZnO films affect the growth of one-dimensional ZnO nanostructures. Not only crystalline ZnO films but also amorphous ones can act as a scaffold for ZnO nucleus. Tilted ZnO micro-rods are grown on ZnO gel films, whereas vertically aligned ZnO nanowire arrays are grown on nanometer-sized ZnO grains. The average diameter of ZnO nanowire arrays are correlated strongly with the grain size of sol-gel derived ZnO films.

  18. ZnO thin film deposition using colliding plasma plumes and single plasma plume: Structural and optical properties

    SciTech Connect

    Gupta, Shyam L. Thareja, Raj K.

    2013-12-14

    We report the comparative study on synthesis of thin films of ZnO on glass substrates using IR laser ablated colliding plasma plumes and conventional pulsed laser deposition using 355 nm in oxygen ambient. The optical properties of deposited films are characterized using optical transmission in the UV-visible range of spectrum and photoluminescence measurements. X-ray diffraction and atomic force microscopy are used to investigate the surface morphology of synthesized ZnO films. The films synthesized using colliding plumes created with 1064 nm are non-polar a-plane ZnO with transmission in UV-visible (300–800 nm) region ∼60% compared to polycrystalline thin film deposited using single plume which has chunk deposition and poor optical response. However, deposition with 355 nm single plume shows polar c-axis oriented thin film with average roughness (∼thickness) of ∼86 nm (∼850 nm) compared to ∼2 nm (∼3 μm) for 1064 nm colliding plumes. These observed differences in the quality and properties of thin films are attributed to the flux of mono-energetic plasma species with almost uniform kinetic energy and higher thermal velocity reaching the substrate from interaction/stagnation zone of colliding plasma plumes.

  19. Structural and electrical properties of electric field assisted spray deposited pea structured ZnO film

    NASA Astrophysics Data System (ADS)

    Chaturvedi, Neha; Swami, Sanjay Kumar; Dutta, Viresh

    2016-05-01

    Spray deposition of ZnO film was carried out. The uneven growth of ZnO nanostructures is resulted for spray deposited ZnO film. Application of DC voltage (1000V) during spray deposition provides formation of pea like structures with uniform coverage over the substrate. Electric field assisted spray deposition provides increased crystallinity with reduced resistivity and improved mobility of the ZnO film as compared to spray deposited ZnO film without electric field. This with large area deposition makes the process more efficient than other techniques.

  20. Semiconducting properties of Al doped ZnO thin films.

    PubMed

    Al-Ghamdi, Ahmed A; Al-Hartomy, Omar A; El Okr, M; Nawar, A M; El-Gazzar, S; El-Tantawy, Farid; Yakuphanoglu, F

    2014-10-15

    Aluminum doped ZnO (AZO) thin films were successfully deposited via spin coating technique onto glass substrates. Structural properties of the films were analyzed by X-ray diffraction, atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy. X-ray diffraction results reveal that all the films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction (002) plane. The crystallite size of ZnO and AZO films was determined from Scherrer's formula and Williamson-Hall analysis. The lattice parameters of the AZO films were found to decrease with increasing Al content. Energy dispersive spectroscopy (EDX) results indicate that Zn, Al and O elements are present in the AZO thin films. The electrical conductivity, mobility carriers and carrier concentration of the films are increased with increasing Al doping concentration. The optical band gap (Eg) of the films is increased with increasing Al concentration. The AZO thin films indicate a high transparency in the visible region with an average value of 86%. These transparent AZO films may be open a new avenue for optoelectronic and photonic devices applications in near future.

  1. Plasma Induced Modification on Spin-Coated ZnO Thin Films

    NASA Astrophysics Data System (ADS)

    Vyas, Rishi; Gupta, Parul; Mathur, Shubhra; Sachdev, K.; Sharma, S. K.

    2011-07-01

    Sol-gel spin coated ZnO thin films were prepared using nanostructured ZnO powder synthesized by sol-gel route. The spin coated ZnO thin films were annealed at 300 °C & 400 °C for 2 hours in air to produce films with different grain size. These thin films were then given N2+H2 (1:3) DC plasma treatment for 30 min. These films were investigated with XRD and SEM. XRD investigation on the specimens revealed the reduction of grain size in plasma treated ZnO thin films. The SEM investigation indicated the smoothening of the surface on plasma treatment.

  2. Characteristics of ZnO Thin Films on Plastic Resin Substrates

    NASA Astrophysics Data System (ADS)

    Inoue, Ryuunosuke; Yoshida, Takamasa; Matuda, Namio; Tamaki, Akira

    ZnO thin films on plastic resin substrates were prepared by RF magnetron sputtering. Substrate used polycarbonate of plastic resin. ZnO thin films changed sputtering time and RF power and produced it. Surface morphology were studied by scanning electron microscopy (SEM) and atomic force mi-croscopy (AFM). Adhesive power of thin films on substrates were studied by peel test. Transparency and surface unevenness of ZnO thin films on plastic resin substrates were able to be improved by lowering RF power. ZnO thin films on plastic resin substrates found that adhesive power was stronger than ITO thin films on plastic resin substrates.

  3. Role of ZnO thin film in the vertically aligned growth of ZnO nanorods by chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Son, Nguyen Thanh; Noh, Jin-Seo; Park, Sungho

    2016-08-01

    The effect of ZnO thin film on the growth of ZnO nanorods was investigated. ZnO thin films were sputter-deposited on Si substrate with varying the thickness. ZnO nanorods were grown on the thin film using a chemical bath deposition (CBD) method at 90 °C. The ZnO thin films showed granular structure and vertical roughness on the surface, which facilitated the vertical growth of ZnO nanorods. The average grain size and the surface roughness of ZnO film increased with an increase in film thickness, and this led to the increase in both the average diameter and the average length of vertically grown ZnO nanorods. In particular, it was found that the average diameter of ZnO nanorods was very close to the average grain size of ZnO thin film, confirming the role of ZnO film as a seed layer for the vertical growth of ZnO nanorods. The CBD growth on ZnO seed layers may provide a facile route to engineering vertically aligned ZnO nanorod arrays.

  4. Development of nanostructured ZnO thin film via electrohydrodynamic atomization technique and its photoconductivity characteristics.

    PubMed

    Duraisamy, Navaneethan; Kwon, Ki Rin; Jo, Jeongdai; Choi, Kyung-Hyun

    2014-08-01

    This article presents the non-vacuum technique for the preparation of nanostructured zinc oxide (ZnO) thin film on glass substrate through electrohydrodynamic atomization (EHDA) technique. The detailed process parameters for achieving homogeneous ZnO thin films are clearly discussed. The crystallinity and surface morphology of ZnO thin film are investigated by X-ray diffraction and field emission scanning electron microscopy. The result shows that the deposited ZnO thin film is oriented in the wurtzite phase with void free surface morphology. The surface roughness of deposited ZnO thin film is found to be ~17.8 nm. The optical properties of nanostructured ZnO thin films show the average transmittance is about 90% in the visible region and the energy band gap is found to be 3.17 eV. The surface chemistry and purity of deposited ZnO thin films are analyzed by fourier transform infrared and X-ray photoelectron spectroscopy, conforming the presence of Zn-O in the deposited thin films without any organic moiety. The photocurrent measurement of nanostructured ZnO thin film is examined in the presence of UV light illumination with wavelength of 365 nm. These results suggest that the deposited nanostructured ZnO thin film through EHDA technique possess promising applications in the near future.

  5. Electrodeposited ZnO films with high UV emission properties

    SciTech Connect

    Matei, Elena; Enculescu, Ionut

    2011-11-15

    Highlights: {yields} Electrodeposition of ZnO from nitrate baths is investigated. {yields} The influence of process parameters on morphological and optical properties is studied. {yields} Experimental conditions to fabricate ZnO films with high UV emission were found. -- Abstract: We report here our results in the preparation of ZnO films with high UV band to band characteristic luminescence emission by potentiostatic electrodeposition. Zinc nitrate aqueous baths with different concentration and additives were employed for the preparation of the films on platinum substrates. We focused our research in determining how the electrodeposition bath composition, i.e. zinc nitrate concentration and addition of KCl or polyvinyl pyrolidone and applied overpotential influence the morphological and optical properties of the oxide films. Scanning electron microscopy was employed for characterizing the films in terms of morphology. Optical reflection, photoluminescence spectroscopy and cathodoluminescence were used for determining the optical characteristics of the samples. The morphology of the deposit varies from hexagonal prisms to platelets as a function of the deposition rate. This experimental parameter also influences the luminescence properties. We found that at low deposition rates high UV luminescent material is obtained.

  6. Structural, optical, and LED characteristics of ZnO and Al doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2017-05-01

    ZnO (pristine) and Al doped ZnO (AZO) films were prepared using sol-gel spin coating method. The XRD analysis showed the enhanced compressive stress in AZO film. The presence of extended states below the conduction band edge in AZO accounts for the redshift in optical bandgap. The PL spectra of AZO showed significant blue emission due to the carrier recombination from defect states. The TRPL curves showed the dominant DAP recombination in ZnO film, whereas defect related recombination in Al doped ZnO film. Color parameters viz: the dominant wavelength, color coordinates (x,y), color purity, luminous efficiency and correlated color temperature (CCT) of ZnO and AZO films are calculated using 1931 (CIE) diagram. Further, a strong blue emission with color purity more than 96% is observed in both the films. The enhanced blue emission in AZO significantly increased the luminous efficiency (22.8%) compared to ZnO film (10.8%). The prepared films may be used as blue phosphors in white light generation.

  7. Characterization and ammonia sensing properties of pure and modified ZnO films

    NASA Astrophysics Data System (ADS)

    Bal, Amandeep Kaur; Singh, Amarjit; Bedi, R. K.

    2011-05-01

    Zinc oxide (ZnO) films have been prepared by thermal oxidation of pre-deposited zinc films on the glass substrate kept at room temperature. These films were surface modified by dipping them into an aqueous solution (0.1 M) of lithium chloride (LiCl) and aluminium chloride (AlCl3) followed by firing at 500°C. Based on X-ray diffraction results it is observed that modification of pure ZnO by lithium and aluminium precursor results a change in the lattice parameters. Li and Al ions appear to enhance the a-axis orientation and c-axis orientation of pure ZnO films, respectively. Field emission scanning electron micrographs of lithium-modified ZnO film indicate the presence of nanoneedles, while nanorods are observed in case of aluminium-modified ZnO film. The electrical resistance measurements of modified ZnO films also show variation in resistance as compared to pure ZnO film. Pure and Al-modified films of ZnO are sensitive to ammonia at room temperature, while Al-modified ZnO film is found to be more sensitive with 99% of response at 250 ppm.

  8. [Study of transmittance of ZnO film deposited on different substrate].

    PubMed

    Yuan, Guang-Cai; Xu, Zheng; Zhang, Fu-Jun; Wang, Yong; Zhao, De-Wei; Xu, Hong-Hua

    2007-07-01

    ZnO films were deposited on different structural substrate by rf-reactive Magnetron sputtering. The optical characteristics of ZnO films were studied by X-ray diffraction and optical transmission spectrum. The ZnO films deposited on the Al2 O3 / AlN compound substrate had better crystallized and had a higher transmittance compared to the ones on AlN substrate. The optical characteristics of ZnO films were studied after all samples with a series of annealing temperature from 200 degrees C to 500 degrees C. When the annealing temperature was 400 degrees C, crystallization and c-axis (002) oriented of the ZnO film got best, and average optical transmittance reached 88% in the range visible light. While annealing temperature went beyond 450 degrees C, the crystallized structure of ZnO films was broken; the distance between O and Zn atoms became bigger. The authors found that the higher annealing temperature make against crystallization of ZnO thin film and increased density of defect states and dispersion mechanisms and reduced optical characteristics of ZnO film, and average optical transmittance of ZnO films reached 80% in the range of visible light at 500 degrees C.

  9. Mn doped nanostucture ZnO thin film for photo sensor and gas sensor application

    NASA Astrophysics Data System (ADS)

    Mahajan, Sandip V.; Upadhye, Deepak S.; Shaikh, Shahid U.; Birajadar, Ravikiran B.; Siddiqui, Farha Y.; Ghule, Anil V.; Sharma, Ramphal

    2013-02-01

    Mn doped nanostructure ZnO thin film prepared by soft chemically route method. ZnO thin films were deposited on glass substrate by successive ionic layer adsorption and reaction technique (SILAR). After deposit ZnO thin film dipped in MnSO4 solution for 1 min. The optical properties as absorbance were determined using UV-Spectrophotometer and band gap was also calculated. The Structural properties were studied by XRD. The improvement in gas sensing properties was found to enhance after doping of Mn on ZnO thin film. The Photo Sensor nature was calculated by I-V characteristics.

  10. Nanostructured ZnO films on stainless steel are highly safe and effective for antimicrobial applications.

    PubMed

    Shim, Kyudae; Abdellatif, Mohamed; Choi, Eunsoo; Kim, Dongkyun

    2017-04-01

    The safety and effectiveness of antimicrobial ZnO films must be established for general applications. In this study, the antimicrobial activity, skin irritation, elution behavior, and mechanical properties of nanostructured ZnO films on stainless steel were evaluated. ZnO nanoparticle (NP) and ZnO nanowall (NW) structures were prepared with different surface roughnesses, wettability, and concentrations using an RF magnetron sputtering system. The thicknesses of ZnO NP and ZnO NW were approximately 300 and 620 nm, respectively, and ZnO NW had two diffraction directions of [0002] and [01-10] based on high-resolution transmission electron microscopy. The ZnO NW structure demonstrated 99.9% antimicrobial inhibition against Escherichia coli, Staphylococcus aureus, and Penicillium funiculosum, and no skin irritation was detected using experimental rabbits. Approximately 27.2 ± 3.0 μg L(-1) Zn ions were eluted from the ZnO NW film at 100 °C for 24 h, which satisfies the WHO guidelines for drinking water quality. Furthermore, the Vickers hardness and fracture toughness of ZnO NW films on stainless steel were enhanced by 11 and 14% compared to those of the parent stainless steel. Based on these results, ZnO NW films on STS316L sheets are useful for household supplies, such as water pipes, faucets, and stainless steel containers.

  11. Influence of solvent on humidity sensing of sol-gel deposited ZnO thin films

    NASA Astrophysics Data System (ADS)

    Boukaous, Chahra; Telia, Azzedine; Horwat, David; Salah Aida, Mohammed; Boudine, Boubaker; Ghanem, Salah

    2014-02-01

    Undoped zinc oxide (ZnO) thin films have been grown on glass substrates by sol-gel process associated with dip coating. Two different solvents are used such as: 2-methoxyethanol and ethanol. The influence of these solvents on structural and optical properties of ZnO thin films has been investigated. Crystallinity and surface morphology of ZnO films are analyzed using X-ray diffractometry (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The optical properties are characterized by ultraviolet-visible (UV-vis) and photoluminescence spectroscopy (PL). Humidity sensors have been prepared with deposited ZnO films. Results reveal that ZnO thin film synthesized with 2-methoxyethanol showed a better crystalline quality and ultraviolet emission performance. In addition, a smaller transmittance in visible range and a higher surface roughness are observed. Sensing humidity test exhibits better sensitivity for sensor prepared with film deposited using 2-methoxyethanol as solvent.

  12. Persistent photoconductivity in highly porous ZnO films

    NASA Astrophysics Data System (ADS)

    Reemts, Jens; Kittel, Achim

    2007-01-01

    ZnO and ZnO-dye hybrid films prepared by electrochemical deposition are highly porous if fabricated in the presence of structure directing agents and they can easily be sensitized by various molecules. If the material is sensitized with the appropriate molecules, it becomes interesting for various sensor applications, i.e., gas sensors and biosensors, or as an electrode material for solar energy conversion in dye sensitized solar cells. In the present work, the focus is on dye sensitized ZnO as a model system. The long term photoconductivity transients have been investigated in such kind of material. Upon excitation with different wavelengths, the conductivity increases already under sub-band-gap illumination due to widely distributed trap states within the band gap. The slow photoconductivity transients follow a stretched exponential law if the illumination is rapidly changing in a dry atmosphere. The underlying mechanism of persistent photoconductivity can be attributed to a lattice relaxation process of surface states, immediately after electrons have been photoexcited into distributed surface states located inside the band gap of the ZnO thin film.

  13. Structural, optical and electronic structure studies of Al doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Devi, Vanita; Kumar, Manish; Shukla, D. K.; Choudhary, R. J.; Phase, D. M.; Kumar, Ravindra; Joshi, B. C.

    2015-07-01

    Structural, optical and electronic structure of Al doped ZnO thin films grown using pulsed laser deposition on glass substrate are investigated. X-ray diffraction measurements reveal that all the films are textured along the c-axis and have wurtzite structure. Al doping in ZnO films leads to increase in grain size due to relaxation in compressive stress. Enhancement in band gap of ZnO films with the Al doping is also noticed which can be ascribed to the Brustein-Moss shift. The changes in the electronic structure caused by Al in the doped thin film samples are understood through X-ray absorption measurements.

  14. Physical and electronic properties of electrodeposited ZnO thin films: dependence on thickness

    NASA Astrophysics Data System (ADS)

    Kıcır, N.; Ozkendir, O. M.; Farha, A. H.; Kırmızıgül, F.; Tuken, T.; Gumus, C.; Çabuk, S.; Erbil, M.; Ufuktepe, Y.

    2015-10-01

    ZnO films have been prepared on indium tin oxide-coated glass substrates, with the help of a potentiostatic method in aqueous zinc nitrate solution. Dependence of crystallographic, optical and electronic properties on thickness of the film is reported and discussed. An increase in the film thickness causes an increase in the band and leads to an improvement in crystallinity and conductivity. The experimental results suggest a strong correlation between electronic and crystal structure of the polycrystalline wurtzite ZnO films. These observations can be used to establish guidelines for optimizing the thickness and orientation to increase the control of device performance based on ZnO thin films.

  15. Ultraviolet emission enhancement in ZnO thin films modified by nanocrystalline TiO2

    NASA Astrophysics Data System (ADS)

    Zheng, Gaige; Lu, Xi; Qian, Liming; Xian, Fenglin

    2017-05-01

    In this study, nanocrystalline TiO2 modified ZnO thin films were prepared by electron beam evaporation. The structural, morphological and optical properties of the samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), UV-visible spectroscopy, fluorescence spectroscopy, respectively. The composition of the films was examined by energy dispersive X-ray spectroscopy (EDX). The photoluminescent spectrum shows that the pure ZnO thin film exhibits an ultraviolet (UV) emission peak and a strong green emission band. Surface analysis indicates that the ZnO thin film contains many oxygen vacancy defects on the surface. After the ZnO thin film is modified by the nanocrystalline TiO2 layer, the UV emission of ZnO is largely enhanced and the green emission is greatly suppressed, which suggests that the surface defects such as oxygen vacancies are passivated by the TiO2 capping layer. As for the UV emission enhancement of the ZnO thin film, the optimized thickness of the TiO2 capping layer is ∼16 nm. When the thickness is larger than 16 nm, the UV emission of the ZnO thin film will decrease because the TiO2 capping layer absorbs most of the excitation energy. The UV emission enhancement in the nanocrystalline TiO2 modified ZnO thin film can be attributed to surface passivation and flat band effect.

  16. Luminescent and electrophysical properties of nanostructured thin ZnO films

    NASA Astrophysics Data System (ADS)

    Grigoryev, L. V.; Nisgireva, A. I.; Cernyh, E. A.; Kulakov, S. V.; Nefedov, V. G.; Shakin, O. V.

    2017-05-01

    In article are presented the results investigation of the luminescent properties of thin ZnO films. Present the results of the investigation of the I-V characteristic in a zinc oxide film obtained by a reactive ion-plasma method. Presented the parameters of electrically active traps and quantity the mobility of charge carriers in ZnO.

  17. Surface Morphological and Nanomechanical Properties of PLD-Derived ZnO Thin Films

    PubMed Central

    2008-01-01

    This study reports the surface roughness and nanomechanical characteristics of ZnO thin films deposited on the various substrates, obtained by means of atomic force microscopy (AFM), nanoindentation and nanoscratch techniques. ZnO thin films are deposited on (a- and c-axis) sapphires and (0001) 6H-SiC substrates by using the pulsed-laser depositions (PLD) system. Continuous stiffness measurements (CSM) technique is used in the nanoindentation tests to determine the hardness and Young’s modulus of ZnO thin films. The importance of the ratio (H/Efilm) of elastic to plastic deformation during nanoindentation of ZnO thin films on their behaviors in contact-induced damage during fabrication of ZnO-based devices is considered. In addition, the friction coefficient of ZnO thin films is also presented here.

  18. Nitrogen oxides and ammonia sensing characteristics of SILAR deposited ZnO thin film

    NASA Astrophysics Data System (ADS)

    Lupan, O. I.; Shishiyanu, S. T.; Shishiyanu, T. S.

    2007-07-01

    Pure and Sn, Ni doped ZnO thin films were deposited on glass substrates using a novel successive ionic layer adsorption and reaction (SILAR) method at room temperature. Microstructures of the deposited films were optimized by adjusting growth parameters. The variation in resistivity of the ZnO film sensors was performed with rapid photothermal processing (RPP). The effect of rapid photothermal processing was found to have an important role in ZnO based sensor sensitivity to NO 2, NH 3. While the undoped ZnO film surface exhibited higher NH 3 sensitivity than that of NO 2, an enhanced NO 2 sensitivity was noticed for the ZnO films doped with Sn and higher NH 3 sensitivity was obtained by Ni doping.

  19. Synthesis and annealing study of RF sputtered ZnO thin film

    SciTech Connect

    Singh, Shushant Kumar Sharma, Himanshu; Singhal, R.; Kumar, V. V. Siva; Avasthi, D. K.

    2016-05-23

    In this paper, we have investigated the annealing effect on optical and structural properties of ZnO thin films, synthesized by RF magnetron sputtering. ZnO thin films were deposited on glass and silicon substrates simultaneously at a substrate temperature of 300 °C using Argon gas in sputtering chamber. Thickness of as deposited ZnO thin film was found to be ~155 nm, calculated by Rutherford backscattering spectroscopy (RBS). These films were annealed at 400 °C and 500 °C temperature in the continuous flow of oxygen gas for 1 hour in tube furnace. X-ray diffraction analysis confirmed the formation of hexagonal wurtzite structure of ZnO thin film along the c-axis (002) orientation. Transmittance of thin films was increased with increasing the annealing temperature estimated by UV-visible transmission spectroscopy. Quality and texture of the thin films were improved with annealing temperature, estimated by Raman spectroscopy.

  20. Morphological, Mechanical and Thermal Study of ZnO Nanoparticle Reinforced Chitosan Based Transparent Biocomposite Films

    NASA Astrophysics Data System (ADS)

    Das, Kunal; Maiti, Sonakshi; Liu, Dagang

    2014-04-01

    Chitosan based biocomposite transparent films reinforced with zinc oxide (ZnO) nanoparticles at different loading i.e. 2, 4 and 6 wt% were successfully prepared by solution casting method. Shape, size and geometry of the zinc oxide nanoparticles were characterized by scanning electron microscopy (SEM). The biocomposite films were subjected to mechanical characterization, thermal analysis, morphology study and moisture uptake behaviour. The characterization tools used here include wide angle X-ray diffraction study, scanning electron microscopic analysis, differential scanning calorimetric analysis and also UV-visible transmittance behavior. SEM micrographs revealed uniformly dispersed ZnO nanoparticles in biocomposite films. Improvement of the tensile strength about 133 % was observed significantly in case of 4 wt% loaded chitosan/ZnO films with respect to the neat chitosan film. 43 % higher transparency was observed in case of 2 wt% ZnO loaded biocomposites films, thus indicating the best combination of properties of 2 wt% ZnO loaded biocomposite films.

  1. Microstructure of ZnO Thin Films Deposited by High Power Impulse Magnetron Sputtering (Postprint)

    DTIC Science & Technology

    2015-03-01

    W.J. Maeng, S.J. Kim, J.S. Park, K.B. Chung, H. Kim, Low temperature atomic layer de- posited Al - doped ZnO thin films and associated semiconducting...the de- position of ZnO thin films for electronics was tested by Partridge et al . [26] by measuring the films’ Hall mobility and the I–V...and 0.67 Pa growth conditions).ins in ZnO films grown by HiPIMS with different pressures. ublic release; distribution unlimited. 36 A.N. Reed et al

  2. Synthesis and characterization of ZnO nanostructured film for optoelectronic applications

    SciTech Connect

    Kumar, Vijay E-mail: sanjeev04101977@gmail.com; Singh, Harpreetpal

    2015-05-15

    ZnO nanostructured film is synthesized by solution combustion technique. X-ray diffraction (XRD) studies show that preferred orientation is along (101) confirming the hexagonal wurtzite phase and no secondary phase is observed. The rietveld refinement of the XRD data was used to calculate different lattice parameters. I-V characterization of ZnO film shows non linear behavior. These ZnO films are photosensitive, may be due to defect states. This property of these films can be utilized in optoelectronic applications.

  3. Macroparticles Reduction Using Filter Free Cathodic Vacuum Arc Deposition Method in ZnO Thin Films.

    PubMed

    Yuvakkumar, R; Peranantham, P; Nathanael, A Joseph; Nataraj, D; Mangalaraj, D; Hong, Sun Ig

    2015-03-01

    We report a new method to reduce macroparticles in ZnO thin films using filter free cathodic vacuum arc deposition without using any cooling arrangements operated at low arc current. The detailed mechanism has been proposed to reduce macroparticles during thin film deposition. The successful reduction of macroparticles was confirmed employing FESEM-EDX studies. FESEM images of ZnO thin films deposited with cathode spot to substrate distance from 10 to 20 cm revealed that the population of the macroparticles were reduced with the increase of cathode spot to substrate distances at low arc current. The prepared ZnO films were characterised and showed good structural and optical properties.

  4. Atmospheric growth of ZnO films deposited by spray pyrolysis using diethylzinc solution

    NASA Astrophysics Data System (ADS)

    Imai, Masato; Watanabe, Marin; Mochihara, Akiko; Tominaga, Himeka; Yoshino, Kenji; Shen, Qing; Toyoda, Taro; Hayase, Shuzi

    2017-06-01

    Non-doped ZnO thin films are deposited on glass substrates by spray pyrolysis using diethylzinc solution at a range from a room temperature to 150 °C while making N2 gas flow in atmospheric pressure. The morphology, the structural property, the density and the optical band gap are studied. As the deposition temperature is increasing, the overall density and the optical band gap approach to the values of ZnO single crystal. The quality of ZnO thin film deposited at 150 °C becomes near ZnO single crystal.

  5. Selective growth of ZnO thin film nanostructures: Structure, morphology and tunable optical properties

    SciTech Connect

    Krishnakanth, Katturi Naga; Sunandana, C. S.; Rajesh, Desapogu E-mail: mperd@nus.edu.sg

    2016-05-23

    The ZnO nanostructures (spherical, rod shape) have been successfully fabricated via a thermal evaporation followed by dip coating method. The pure, doped ZnO thin films were characterized by X-ray powder diffraction (XRD) and field emission scanning electron microscopy (FESEM) and UV-Vis spectroscopy, respectively. A possible growth mechanism of the spherical, rod shape ZnO nanostructures are discussed. XRD patterns revealed that all films consist of pure ZnO phase and were well crystallized with preferential orientation towards (002) direction. Doping by PVA, PVA+Cu has effective role in the enhancement of the crystalline quality and increases in the band gap.

  6. Crystallographic polarity effect of ZnO on thin film growth of pentacene

    NASA Astrophysics Data System (ADS)

    Nakamura, Tatsuru; Nagata, Takahiro; Hayakawa, Ryoma; Yoshimura, Takeshi; Oh, Seungjun; Hiroshiba, Nobuya; Chikyow, Toyohiro; Fujimura, Norifumi; Wakayama, Yutaka

    2017-04-01

    The spontaneous polarization effect of ZnO on the thin film growth of pentacene, which is a typical π conjunction organic semiconductor, was investigated. Pentacene thin films were grown on polar ZnO surfaces by ultraslow organic film physical vapor deposition to obtain layer-by-layer growth. X-ray diffraction measurements revealed that pentacene molecules stand upright on polar ZnO surfaces, and that the films consist of two polymorphs, namely, the thin-film and bulk phases. The thin-film phases of pentacene were observed regardless of the polarity of the ZnO substrate at a thickness of less than six molecular layers. However, pentacene on a Zn-polar ZnO substrate gradually changed to the bulk phase unlike that on an O-polar ZnO substrate. Kelvin probe force microscopy measurements revealed that the surface potential of pentacene becomes more positive with increasing pentacene thickness at less than two molecular layers. The variation in the potential of pentacene on the Zn-polar ZnO substrate was larger than that of pentacene on the O-polar ZnO substrate. These findings indicate that the polarity of the semiconductor can control the growth and electronic state of the inorganic/organic semiconductor interface.

  7. Twin symmetry texture of energetically condensed niobium thin films on sapphire substrate (a-plane Al2O3)

    NASA Astrophysics Data System (ADS)

    Zhao, X.; Phillips, L.; Reece, C. E.; Seo, Kang; Krishnan, M.; Valderrama, E.

    2011-08-01

    An energetic condensation technique, cathodic arc discharge deposition, is used to grow epitaxial Niobium (Nb) thin films on a-plane sapphire (hexagonal-closed-packed Al2O3) at moderate substrate heating temperature (<400 °C). The epitaxial Nb(110)/Al2O3(1,1,-2,0) thin films reached a maximum residual resistance ratio (RRR) value 214, despite using a reactor-grade Nb cathode source whose RRR was only 30. The measurements suggest that the film's density of impurities and structural defects are lower when compared to Nb films produced by other techniques, such as magnetron sputtering, e-beam evaporation or molecular-beam-epitaxy. At lower substrate temperature, textured polycrystalline Nb thin films were created, and the films might have twin symmetry grains with {110} orientations in-plane. The texture was revealed by x-ray diffraction pole figures. The twin symmetry might be caused by a combination effect of the Nb/Al2O3 three-dimensional epitaxial relationship ("3D-Registry" Claassen's nomenclature) and the "Volmer-Weber" (Island) growth model. However, pole figures obtained by electron backscattering diffraction (EBSD) found no twin symmetry on the thin films' topmost surface (˜50 nm in depth). The EBSD pole figures showed only one Nb{110} crystal plane orientation. A possible mechanism is suggested to explain the differences between the bulk (XRD) and surface (EBSD) pole figures.

  8. Optimization of growth conditions of ZnO nano thin films by chemical double dip technique

    PubMed Central

    Vijayan, Thirukonda Anandamoorthy; Chandramohan, Rathinam; Valanarasu, Santiyagu; Thirumalai, Jagannathan; Venkateswaran, Sivasuriyan; Mahalingam, Thaiyan; Srikumar, Subbiah Ramachandran

    2008-01-01

    Zinc oxide (ZnO) nano thin films have been deposited by the chemical double-dip technique using aqueous ZnSO4 and NaOH solutions. The ZnO films were characterized in terms of surface morphology by x-ray diffraction, energy-dispersive x-ray analysis (EDX), the use of a scanning electron microscope (SEM) and atomic force microscope (AFM) for surface morphology. The films exhibited a smooth morphology. The chemical states of oxygen and zinc in the ZnO nano thin films were also investigated by x-ray photoelectron spectroscopy (XPS). In the present investigations, highly textured ZnO thin films with a preferential (002)-orientation were prepared on glass substrates. The deposition conditions were optimized to obtain device-quality films for practical applications. PMID:27878004

  9. Optimization of growth conditions of ZnO nano thin films by chemical double dip technique

    NASA Astrophysics Data System (ADS)

    Anandamoorthy Vijayan, Thirukonda; Chandramohan, Rathinam; Valanarasu, Santiyagu; Thirumalai, Jagannathan; Venkateswaran, Sivasuriyan; Mahalingam, Thaiyan; Ramachandran Srikumar, Subbiah

    2008-07-01

    Zinc oxide (ZnO) nano thin films have been deposited by the chemical double-dip technique using aqueous ZnSO4 and NaOH solutions. The ZnO films were characterized in terms of surface morphology by x-ray diffraction, energy-dispersive x-ray analysis (EDX), the use of a scanning electron microscope (SEM) and atomic force microscope (AFM) for surface morphology. The films exhibited a smooth morphology. The chemical states of oxygen and zinc in the ZnO nano thin films were also investigated by x-ray photoelectron spectroscopy (XPS). In the present investigations, highly textured ZnO thin films with a preferential (002)-orientation were prepared on glass substrates. The deposition conditions were optimized to obtain device-quality films for practical applications.

  10. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

    SciTech Connect

    Shafura, A. K. Azhar, N. E. I.; Uzer, M.; Mamat, M. H.; Sin, N. D. Md.; Saurdi, I.; Shuhaimi, A.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2016-07-06

    CH{sub 4} gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10{sup −3} S/cm and 11.5%, respectively.

  11. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

    NASA Astrophysics Data System (ADS)

    Shafura, A. K.; Sin, N. D. Md.; Azhar, N. E. I.; Saurdi, I.; Uzer, M.; Mamat, M. H.; Shuhaimi, A.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2016-07-01

    CH4 gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10-3 S/cm and 11.5%, respectively.

  12. Enhanced Gas Sensing Properties of Spin-coated Na-doped ZnO Nanostructured Films

    PubMed Central

    Basyooni, Mohamed A.; Shaban, Mohamed; El Sayed, Adel M.

    2017-01-01

    In this report, the structures, morphologies, optical, electrical and gas sensing properties of ZnO and ZnO: Na spin-coated films are studied. X-ray diffraction (XRD) results reveal that the films are of a single phase wurtzite ZnO with a preferential orientation along (002) direction parallel to c-axis. Na doping reduces the crystalline quality of the films. The plane surface of ZnO film turned to be wrinkle net-work structure after doping. The reflectance and the optical band gap of the ZnO film decreased after Na doping. The wrinkle net-work nanostructured Na-doped film shows an unusually sensitivity, 81.9% @ 50 sccm, for CO2 gas at room temperature compared to 1.0% for the pure ZnO film. The signals to noise ratio (SNR) and detection limit of Na-doped ZnO sensor are 0.24 and 0.42 sccm, respectively. These enhanced sensing properties are ascribed to high surface-to-volume ratio, hoping effect, and the increase of O- vacancies density according to Kroger VinK effect. The response time increased from 179 to 240 s by the incorporation of Na atoms @50 sccm. This response time increased as the CO2 concentration increased. The recovery time is increased from 122 to 472 s by the incorporation of Na atoms @50 sccm. PMID:28145506

  13. Comparison on electrically pumped random laser actions of hydrothermal and sputtered ZnO films

    SciTech Connect

    Wang, Canxing; Jiang, Haotian; Li, Yunpeng; Ma, Xiangyang; Yang, Deren

    2013-10-07

    Random lasing (RL) in polycrystalline ZnO films is an intriguing research subject. Here, we have comparatively investigated electrically pumped RL behaviors of two metal-insulator-semiconductor structured devices using the hydrothermal and sputtered ZnO films as the semiconductor components, i.e., the light-emitting layers, respectively. It is demonstrated that the device using the hydrothermal ZnO film exhibits smaller threshold current and larger output optical power of the electrically pumped RL. The morphological characterization shows that the hydrothermal ZnO film is somewhat porous and is much rougher than the sputtered one, suggesting that in the former stronger multiple light scattering can occur. Moreover, the photoluminescence characterization indicates that there are fewer defects in the hydrothermal ZnO film than in the sputtered one, which means that the photons can pick up larger optical gain through stimulated emission in the hydrothermal ZnO film. Therefore, it is believed that the stronger multiple light scattering and larger optical gain contribute to the improved performance of the electrically pumped RL from the device using the hydrothermal ZnO film.

  14. Enhanced Gas Sensing Properties of Spin-coated Na-doped ZnO Nanostructured Films.

    PubMed

    Basyooni, Mohamed A; Shaban, Mohamed; El Sayed, Adel M

    2017-02-01

    In this report, the structures, morphologies, optical, electrical and gas sensing properties of ZnO and ZnO: Na spin-coated films are studied. X-ray diffraction (XRD) results reveal that the films are of a single phase wurtzite ZnO with a preferential orientation along (002) direction parallel to c-axis. Na doping reduces the crystalline quality of the films. The plane surface of ZnO film turned to be wrinkle net-work structure after doping. The reflectance and the optical band gap of the ZnO film decreased after Na doping. The wrinkle net-work nanostructured Na-doped film shows an unusually sensitivity, 81.9% @ 50 sccm, for CO2 gas at room temperature compared to 1.0% for the pure ZnO film. The signals to noise ratio (SNR) and detection limit of Na-doped ZnO sensor are 0.24 and 0.42 sccm, respectively. These enhanced sensing properties are ascribed to high surface-to-volume ratio, hoping effect, and the increase of O- vacancies density according to Kroger VinK effect. The response time increased from 179 to 240 s by the incorporation of Na atoms @50 sccm. This response time increased as the CO2 concentration increased. The recovery time is increased from 122 to 472 s by the incorporation of Na atoms @50 sccm.

  15. Enhanced Gas Sensing Properties of Spin-coated Na-doped ZnO Nanostructured Films

    NASA Astrophysics Data System (ADS)

    Basyooni, Mohamed A.; Shaban, Mohamed; El Sayed, Adel M.

    2017-02-01

    In this report, the structures, morphologies, optical, electrical and gas sensing properties of ZnO and ZnO: Na spin-coated films are studied. X-ray diffraction (XRD) results reveal that the films are of a single phase wurtzite ZnO with a preferential orientation along (002) direction parallel to c-axis. Na doping reduces the crystalline quality of the films. The plane surface of ZnO film turned to be wrinkle net-work structure after doping. The reflectance and the optical band gap of the ZnO film decreased after Na doping. The wrinkle net-work nanostructured Na-doped film shows an unusually sensitivity, 81.9% @ 50 sccm, for CO2 gas at room temperature compared to 1.0% for the pure ZnO film. The signals to noise ratio (SNR) and detection limit of Na-doped ZnO sensor are 0.24 and 0.42 sccm, respectively. These enhanced sensing properties are ascribed to high surface-to-volume ratio, hoping effect, and the increase of O- vacancies density according to Kroger VinK effect. The response time increased from 179 to 240 s by the incorporation of Na atoms @50 sccm. This response time increased as the CO2 concentration increased. The recovery time is increased from 122 to 472 s by the incorporation of Na atoms @50 sccm.

  16. Photoconduction properties and anomalous power-dependent quantum efficiency in non-polar ZnO epitaxial films grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lin, C. H.; Chen, R. S.; Lin, Y. K.; Wang, S. B.; Chen, L. C.; Chen, K. H.; Wen, M. C.; Chou, M. M. C.; Chang, L.

    2017-01-01

    Photoconduction (PC) properties in the ZnO films with the (110) nonpolar surface (a-plane) epitaxially grown by chemical vapor deposition on the LiGaO2 (010) substrates with low lattice mismatches (4.0% along the c-axis and 3.8% along the m-axis) have been studied. The structural and optical qualities of the epitaxial films have been characterized using theta-two theta and phi scans, X-ray diffraction, rocking curve, and photoluminescence measurements. The nonpolar ZnO film exhibits a near visible-blind ultraviolet photoresponse. The optimal photocurrent to dark current ratio (i.e., sensitivity) can reach 13360%. The responsivity of the a-plane ZnO photoconductor-type detector can also reach 17 AW-1, which is two to four orders of magnitude higher than those of the m-plane, a-plane, and r-plane photodiodes based on ZnO/ZnMgO quantum wells. The normalized gain at 2.9 cm2V-1 of the nonpolar film is also comparable with the optimal recorded value of the ZnO nanowires. In addition, the PC mechanism has also been investigated by the power-dependent and time-resolved photoconductivity measurements. The power-sensitive responsivity can be attributed to the effect of light intensity on carrier lifetime and quantum efficiency. The photovoltaic effect of the surface depletion region is inferred to be the reason resulting in the anomalous power-dependent quantum efficiency.

  17. Magnetic properties of high Li doped ZnO sol–gel thin films

    SciTech Connect

    Vettumperumal, R.; Kalyanaraman, S.; Santoshkumar, B.; Thangavel, R.

    2014-02-01

    Highlights: • Ferromagnetism in high Li doped ZnO films. • Magnetic properties observed by Guoy's and VSM method. • The rod and wrinkle like structures are observed from the surface of the films. • Band gap of ZnO does not get altered by high Li doping. - Abstract: Undoped and Li doped ZnO thin films were deposited on a glass substrate using the sol–gel dip coating method. The films were prepared at 5 mol.% and 10 mol.% of Li doped ZnO at 550 °C annealing temperature and the deposited films were characterized by X-ray diffraction (XRD), microscopic studies, Gouy's method, vibrating sample magnetometer (VSM) and UV–visible spectroscopy. All the deposited thin films had a hexagonal wurtzite structure with polycrystalline grains at random. Primarily magnetic properties of pure and Li doped ZnO films were observed by Guoy's method which depicted Dia and Para magnetic behavior at room temperature. VSM measurement reveals a coercivity of 97.7 Oe in the films. An inverse relative ferromagnetism was perceived in Li doped ZnO films which had an average transmission of <90%.

  18. Defect assisted saturable absorption characteristics in Al and Li doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    K. M., Sandeep; Bhat, Shreesha; S. M., Dharmaprakash; P. S., Patil; Byrappa, K.

    2016-09-01

    The influence of different doping ratios of Al and Li on the nonlinear optical properties, namely, a two-photon absorption and a nonlinear refraction using single beam Z-scan technique, of nano-crystalline ZnO thin films has been investigated in the present study. A sol-gel spin-coated pure ZnO, Al-doped ZnO (AZO), and Li-doped ZnO (LZO) thin films have been prepared. The stoichiometric deviations induced by the occupancy of Al3+ and Li+ ions at the interstitial sites injects the compressive stress in the AZO and LZO thin films, respectively, while the extended defect states below the conduction band leads to a redshift of energy band gap in the corresponding films as compared to pure ZnO thin film. Switching from an induced absorption in ZnO and 1 at. wt. % doped AZO and LZO films to a saturable absorption (SA) in 2 at. wt. % doped AZO and LZO films has been observed, and it is attributed to the saturation of a linear absorption of the defect states. The closed aperture Z-scan technique revealed the self-focusing (a positive nonlinear refractive index) in all the films, which emerge out of the thermo-optical effects due to the continuous illumination of laser pulses. A higher third-order nonlinear optical susceptibility χ(3) of the order 10-3 esu has been observed in all the films.

  19. Synthesis of nano-dimensional ZnO and Ga doped ZnO thin films by vapor phase transport and study as transparent conducting oxide.

    PubMed

    Ghosh, S; Saurav, M; Pandey, B; Srivastava, P

    2008-05-01

    We report synthesis of polycrystalline ZnO and Ga doped ZnO (ZnO:Ga) thin films (approximately 80 nm) on Si and quartz substrates in a non-vacuum muffle furnace, a simple and cost-effective route, without any catalyst/reactive carrier gases, at relatively low processing temperature of 550 degrees C. The crystalline phases of the films are identified by grazing angle X-ray diffraction (GAXRD). The growth of ZnO films is examined with scanning electron microscope (SEM) as a function of deposition time. An optical transmission of approximately 90% is observed for pure ZnO film having a resistivity of approximately 2.1 Omega-cm as measured by van der Pauw technique. Doping with Ga results in single phase ZnO:Ga films, retaining an optical transmission of about 80% and three orders of magnitude decrease in resistivity as compared to pure ZnO film.

  20. Structural defects and photoluminescence studies of sol-gel prepared ZnO and Al-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2016-11-01

    ZnO and Al-doped ZnO (AZO) films were synthesized using sol-gel spin-coating method. The powder XRD analysis revealed the stress relaxation mechanism upon Al doping in ZnO film. The reduction in the imaginary part of the dielectric constant and suppression of deep level acceptor type octahedral oxygen interstitial defects account for the reduction in carrier concentration in AZO with respect to ZnO. Electrical conductivity measurements and grain boundary conduction model are used to quantify the carrier concentration. From the Commission Internationale d'Eclairge diagram of ZnO and AZO, color parameters like dominant wavelength, color purity and luminosity are determined and reported for the first time. The prepared ZnO and AZO films show considerable blue emission. These films can be used for white light generation.

  1. Oxidation Temperature Effects on ZnO Thin Films Prepared from Zn Thin Films on Quartz Substrates.

    PubMed

    Park, Seonhee; Kim, Younggyu; Leem, Jae-Young

    2015-11-01

    We investigated the structural and optical properties of the ZnO thin films formed by oxidation of Zn thin films. Zn thin films were deposited by thermal evaporation and were then annealed from 300 to 800 degrees C to prepare ZnO thin films. We found that ZnO thin films were formed by thermal oxidation of Zn thin films at oxidation temperatures over 400 degrees C. The grain size of ZnO thin films increased with the oxidation temperature and the highest ZnO (002) intensity was obtained at 600 degrees C. In the PL spectra, the intensity of the near-band-edge peak increased with the oxidation temperatures until 400 degrees C. However, these values gradually decreased with a further increase in the oxidation temperatures over 400 degrees C. The transmittance of the ZnO thin films was more than 90% for the visible wavelength region, and the optical band gap was red-shifted with increase in the oxidation temperature.

  2. Correlation Between Morphology and Nanomechanical Behavior of ZnO Thin Films

    NASA Astrophysics Data System (ADS)

    Sinha, Arijit; Mukherjee, Nillohit

    2017-10-01

    Influence of morphology of ZnO films on the mechanical properties at submicron scale was evaluated by nanoindentation to depict its adhesion with the substrate. ZnO films with three different morphologies viz. hexagonal rods, flakes and spheres were subjected to the analyses. The nanomechanical properties were found to be maximum and minimum for spherical and flake-like ZnO films, respectively. It has also been found that the average surface roughness (Ra) has significant influence on the nanomechanical properties.

  3. Correlation Between Morphology and Nanomechanical Behavior of ZnO Thin Films

    NASA Astrophysics Data System (ADS)

    Sinha, Arijit; Mukherjee, Nillohit

    2016-10-01

    Influence of morphology of ZnO films on the mechanical properties at submicron scale was evaluated by nanoindentation to depict its adhesion with the substrate. ZnO films with three different morphologies viz. hexagonal rods, flakes and spheres were subjected to the analyses. The nanomechanical properties were found to be maximum and minimum for spherical and flake-like ZnO films, respectively. It has also been found that the average surface roughness (Ra) has significant influence on the nanomechanical properties.

  4. PIXE, SR-XRD and EXAFS analysis of Cu-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Zhang, B.; Yang, C.; Wang, J. Z.; Shi, L. Q.; Cheng, H. S.

    2014-08-01

    Cu-doped ZnO films were prepared by rf magnetron sputtering on sapphire substrate at different atmosphere. Microstructure of these films and Cu occupation sites were investigated using PIXE, SR-XRD and EXAFS. Only 2.9 at.% Cu, no other magnetic impurities (e.g., Fe, Co and Ni) were detected. The ZnO:Cu films possessed the wurtzite ZnO structures and no precipitates (e.g., CuO and Cu2O or Cu cluster) were found. Cu atoms were incorporated into ZnO crystal lattice by occupying Zn atomic sites.

  5. Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition.

    PubMed

    Huang, Ruomeng; Ye, Sheng; Sun, Kai; Kiang, Kian S; de Groot, C H Kees

    2017-09-19

    A novel supercycled atomic layer deposition (ALD) process which combines thermal ALD process with in situ O2 plasma treatment is presented in this work to deposit ZnO thin films with highly tunable electrical properties. Both O2 plasma time and the number of thermal ALD cycles in a supercycle can be adjusted to achieve fine tuning of film resistivity and carrier concentration up to six orders of magnitude without extrinsic doping. The concentration of hydrogen defects are believed to play a major role in adjusting the electrical properties of ZnO films. Kelvin probe force microscopy results evidently show the shift of Fermi level in different ZnO films and are well associated with the changing of carrier concentration. This reliable and robust technique reported here clearly points towards the capability of using this method to produce ZnO films with controlled properties in different applications.

  6. Atomic Oxygen Sensors Based on Nanograin ZnO Films Prepared by Pulse Laser Deposition

    SciTech Connect

    Wang Yunfei; Chen Xuekang; Li Zhonghua; Zheng Kuohai; Wang Lanxi; Feng Zhanzu; Yang Shengsheng

    2009-01-05

    High-quality nanograin ZnO thin films were deposited on c-plane sapphire (Al{sub 2}O{sub 3}) substrates by pulse laser deposition (PLD). Scanning electron microscopy (SEM) and x-ray diffraction (XRD) were used to characterize the samples. The structural and morphological properties of ZnO films under different deposition temperature have been investigated before and after atomic oxygen (AO) treatment. XRD has shown that the intensity of the (0 0 2) peak increases and its FWHM value decreases after AO treatment. The AO sensing characteristics of nano ZnO film also has been investigated in a ground-based atomic oxygen simulation facility. The results show that the electrical conductivity of nanograin ZnO films decreases with increasing AO fluence and that the conductivity of the films can be recovered by heating.

  7. Oriented grain growth in ZnO thin films by Iodine doping

    NASA Astrophysics Data System (ADS)

    Thomas, Deepu; Vattappalam, Sunil C.; Mathew, Sunny; Augustine, Simon

    2015-02-01

    ZnO thin films were prepared by Successive Ionic Layer Adsorption Reaction (SILAR) method. Oriented grain growth in Iodine doped ZnO thin films were studied. The oriented grain growth in samples was studied by comparing the peak intensities from X-ray diffraction data and surface morphology by scanning electron microscopy. It is found that oriented grain growth significantly enhanced by Iodine doping. When the oriented grain growth increases, crystallinity of the thin film improves, resistance and band gap decrease. ZnO thin films having good crystallinity with preferential (002) orientation is a prerequisite for the fabrication of devices like UV diode lasers, acoustic- optic devices etc. A possible mechanism for the oriented grain growth is also investigated. It is inferred that creation of point defects is responsible for the enhanced oriented grain growth in ZnO thin films when doped with iodine.

  8. Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

    SciTech Connect

    Sadananda Kumar, N. Bangera, Kasturi V.; Shivakumar, G. K.

    2015-07-15

    Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450°C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm{sup 2} V{sup –1} s{sup –1}, and a hole concentration of 6.25 × 10{sup 17} cm{sup –3}.

  9. Comparative study of ZnO nanorods and thin films for chemical and biosensing applications and the development of ZnO nanorods based potentiometric strontium ion sensor

    NASA Astrophysics Data System (ADS)

    Khun, K.; Ibupoto, Z. H.; Chey, C. O.; Lu, Jun.; Nur, O.; Willander, M.

    2013-03-01

    In this study, the comparative study of ZnO nanorods and ZnO thin films were performed regarding the chemical and biosensing properties and also ZnO nanorods based strontium ion sensor is proposed. ZnO nanorods were grown on gold coated glass substrates by the hydrothermal growth method and the ZnO thin films were deposited by electro deposition technique. ZnO nanorods and thin films were characterised by field emission electron microscopy [FESEM] and X-ray diffraction [XRD] techniques and this study has shown that the grown nanostructures are highly dense, uniform and exhibited good crystal quality. Moreover, transmission electron microscopy [TEM] was used to investigate the quality of ZnO thin film and we observed that ZnO thin film was comprised of nano clusters. ZnO nanorods and thin films were functionalised with selective strontium ionophore salicylaldehyde thiosemicarbazone [ST] membrane, galactose oxidase, and lactate oxidase for the detection of strontium ion, galactose and L-lactic acid, respectively. The electrochemical response of both ZnO nanorods and thin films sensor devices was measured by using the potentiometric method. The strontium ion sensor has exhibited good characteristics with a sensitivity of 28.65 ± 0.52 mV/decade, for a wide range of concentrations from 1.00 × 10-6 to 5.00 × 10-2 M, selectivity, reproducibility, stability and fast response time of 10.00 s. The proposed strontium ion sensor was used as indicator electrode in the potentiometric titration of strontium ion versus ethylenediamine tetra acetic acid [EDTA]. This comparative study has shown that ZnO nanorods possessed better performance with high sensitivity and low limit of detection due to high surface area to volume ratio as compared to the flat surface of ZnO thin films.

  10. Optical properties of hybrid PEDOT-PSS: ZnO thin film

    NASA Astrophysics Data System (ADS)

    Zabidi, Z. M.; Alias, A. N.; Khalid, S. H.; Sahapini, N. F. M.

    2012-09-01

    Hybrid PEDOT-PSS: ZnO thin film have been prepared using drop casting method. The optical properties such as refractive index (n), extinction coefficient (k), reflectivity (R), optical dielectric loss, optical conductivity (σ), dispersion energy (Ed), oscillator energy (E0) and optical energy band gap (Eg) have been calculated in this paper. The determinations of optical constants have been made by applying the single-effective oscillator model proposed by Wemple and Didomenico Jr. We found that the reflectance is decreasing as the composition of ZnO increase. The refractive index of film also show significantly changes with the volume composition of ZnO. As the composition of ZnO increase, the refractive index shows the normal dispersion behavior. The extinction coefficient is decreasing with the increasing of wavelength, but as the wavelength increase from 400 nm until 700 nm, the extinction coefficient is also increasing. Both the real and imaginary part of the dielectric constant decrease as the photon energy increase. The oscillator energy Eo, dispersion energy Ed, optical band energy Eg were determined by using Wemple DiDomenico single-effective-oscillator model. It is shown that Eo is increasing as the composition of ZnO increase, Ed is decreasing as the composition of ZnO increase and Eg is increasing as the composition of ZnO increase. It is shown that the compositions of ZnO influence the optical properties of hybrid PEDOT-PSS: ZnO thin film.

  11. Reliable thermal processing of organic perovskite films deposited on ZnO

    NASA Astrophysics Data System (ADS)

    Zakhidov, Alex; Manspeaker, Chris; Lyashenko, Dmitry; Alex Zakhidov Team

    Zinc oxide (ZnO) is a promising semiconducting material to serve as an electron transport layer (ETL) for solar cell devices based on organo-halide lead perovskites. ZnO ETL for perovskite photovoltaics has a combination of attractive electronic and optical properties: i) the electron affinity of ZnO is well aligned with valence band edge of the CH3NH3PbI3, ii) electron mobility of ZnO is >1 cm2/(Vs), which is a few orders of magnitude higher than that of TiO2 (another popular choice of ETL for perovskite photovoltaic devices), and iii) ZnO has a large of band gap of 3.3 eV, which ensures optical transparency and large barrier for the hole injection. Moreover, ZnO nanostructures can be printed on flexible substrates at room temperatures in cost effective manner. However, it was recently found that organic perovskites deposited on ZnO are unstable and readily decompose at >90°C. In this work, we further investigate the mechanism of decomposition of CH3NH3PbI3 film deposited on ZnO and reveal the role of the solvent in the film during the annealing process. We also develop a restricted volume solvent annealing (RVSA) process for post annealing of the perovskite film on ZnO without decomposition. We demonstrate that RVSA enables reliable perovskite solar cell fabrication.

  12. Raman study of oriented ZnO thin films deposited by sol-gel method

    NASA Astrophysics Data System (ADS)

    Yahia, S. Ben; Znaidi, L.; Kanaev, A.; Petitet, J. P.

    2008-12-01

    ZnO films with preferred orientation along the (0 0 2) plane were successfully deposited by the sol-gel method using Zn(CH 3COO) 2·2H 2O as starting material and inorganic precursor. A homogeneous and stable solution was prepared by dissolving the zinc acetate in a solution of ethanol and monoethanolamine. Thin films are obtained by spin-coating on glass substrates. ZnO films were obtained by preheating the spin-coated films at 300 °C for 10 min after each coating and postheating upto 550 °C for 2 h. The as-deposited films are transformed into mono-oriented ZnO upon thermal treatment. The films consist of spongy particles aggregates with an uniform size and homogenous surface. The films aim to be used in optoelectronic devices. Raman spectroscopy from ZnO films and deposit solutions has been investigated. New Raman results of the deposit solution suggest that Zn-O bond forms first in solution and that these entities play the role of germs initiating the crystallization mechanisms during films annealing. Raman spectra of the annealed films show the presence of a compressive stress within the film structure.

  13. Morphological, physical, antimicrobial and release properties of ZnO nanoparticles-loaded bacterial cellulose films.

    PubMed

    Shahmohammadi Jebel, Fereshteh; Almasi, Hadi

    2016-09-20

    Bacterial cellulose (BC) monolayer and multilayer films, incorporating 5wt.% ZnO nanoparticles (NPs) have been obtained. Ultrasound (US) irradiation (40kHz) was applied during ZnO-BC nanocomposites preparation. X-ray diffraction (XRD) patterns showed that ZnO NPs were crystallized in their pure phase. SEM scanning electron microscopy (SEM) results indicated that US treatment causes to decrease ZnO particle size, forming a stable hybrid nanostructure and evenly distributed ZnO NPs coated BC nanofibers. ZnO NPs enhanced the mechanical properties and diminished water vapor permeability and moisture absorption of BC films. Antibacterial activity of ZnO-BC films against Staphylococcus aureus was more than Escherichia coli. The antibacterial activity was enhanced with the utilization of US irradiation. The ZnO release was influenced by films composition; the multilayer and US treated films being promising in order to achieve controlled release of ZnO. Results suggest that ZnO-BC films may be used as controlled release antimicrobial food active packaging.

  14. Effects of interfacial layer structures on crystal structural properties of ZnO films

    SciTech Connect

    Park, J. S.; Minegishi, T.; Lee, S. H.; Im, I. H.; Park, S. H.; Hanada, T.; Goto, T.; Cho, M. W.; Yao, T.; Hong, S. K.; Chang, J. H.

    2008-01-15

    Single crystalline ZnO films were grown on Cr compound buffer layers on (0001) Al{sub 2}O{sub 3} substrates by plasma assisted molecular beam epitaxy. In terms of lattice misfit reduction between ZnO and substrate, the CrN and Cr{sub 2}O{sub 3}/CrN buffers are investigated. The structural and optical qualities of ZnO films suggest the feasibility of Cr compound buffers for high-quality ZnO films growth on (0001) Al{sub 2}O{sub 3} substrates. Moreover, the effects of interfacial structures on selective growth of different polar ZnO films are investigated. Zn-polar ZnO films are grown on the rocksalt CrN buffer and the formation of rhombohedral Cr{sub 2}O{sub 3} results in the growth of O-polar films. The possible mechanism of polarity conversion is proposed. By employing the simple patterning and regrowth procedures, a periodical polarity converted structure in lateral is fabricated. The periodical change of the polarity is clearly confirmed by the polarity sensitive piezo response microscope images and the opposite hysteretic characteristic of the piezo response curves, which are strict evidences for the validity of the polarity controlling method as well as the successful fabrication of the periodical polarity controlled ZnO structure.

  15. Formation of p-type ZnO thin film through co-implantation

    NASA Astrophysics Data System (ADS)

    Chuang, Yao-Teng; Liou, Jhe-Wei; Woon, Wei-Yen

    2017-01-01

    We present a study on the formation of p-type ZnO thin film through ion implantation. Group V dopants (N, P) with different ionic radii are implanted into chemical vapor deposition grown ZnO thin film on GaN/sapphire substrates prior to thermal activation. It is found that mono-doped ZnO by N+ implantation results in n-type conductivity under thermal activation. Dual-doped ZnO film with a N:P ion implantation dose ratio of 4:1 is found to be p-type under certain thermal activation conditions. Higher p-type activation levels (1019 cm-3) under a wider thermal activation range are found for the N/P dual-doped ZnO film co-implanted by additional oxygen ions. From high resolution x-ray diffraction and x-ray photoelectron spectroscopy it is concluded that the observed p-type conductivities are a result of the promoted formation of PZn-4NO complex defects via the concurrent substitution of nitrogen at oxygen sites and phosphorus at zinc sites. The enhanced solubility and stability of acceptor defects in oxygen co-implanted dual-doped ZnO film are related to the reduction of oxygen vacancy defects at the surface. Our study demonstrates the prospect of the formation of stable p-type ZnO film through co-implantation.

  16. Internal stress induced natural self-chemisorption of ZnO nanostructured films

    PubMed Central

    Chi, Po-Wei; Su, Chih-Wei; Wei, Da-Hua

    2017-01-01

    The energetic particles bombardment can produce large internal stress in the zinc oxide (ZnO) thin film, and it can be used to intentionally modify the surface characteristics of ZnO films. In this article, we observed that the internal stress increased from −1.62 GPa to −0.33 GPa, and the naturally wettability of the textured ZnO nanostructured films changed from hydrophobicity to hydrophilicity. According to analysis of surface chemical states, the naturally controllable wetting behavior can be attributed to hydrocarbon adsorbates on the nanostructured film surface, which is caused by tunable internal stress. On the other hand, the interfacial water molecules near the surface of ZnO nanostructured films have been identified as hydrophobic hydrogen structure by Fourier transform infrared/attenuated total reflection. Moreover, a remarkable near-band-edge emission peak shifting also can be observed in PL spectra due to the transition of internal stress state. Furthermore, our present ZnO nanostructured films also exhibited excellent transparency over 80% with a wise surface wetting switched from hydrophobic to hydrophilic states after exposing in ultraviolet (UV) surroundings. Our work demonstrated that the internal stress of the thin film not only induced natural wettability transition of ZnO nanostructured films, but also in turn affected the surface properties such as surface chemisorption. PMID:28233827

  17. Internal stress induced natural self-chemisorption of ZnO nanostructured films.

    PubMed

    Chi, Po-Wei; Su, Chih-Wei; Wei, Da-Hua

    2017-02-24

    The energetic particles bombardment can produce large internal stress in the zinc oxide (ZnO) thin film, and it can be used to intentionally modify the surface characteristics of ZnO films. In this article, we observed that the internal stress increased from -1.62 GPa to -0.33 GPa, and the naturally wettability of the textured ZnO nanostructured films changed from hydrophobicity to hydrophilicity. According to analysis of surface chemical states, the naturally controllable wetting behavior can be attributed to hydrocarbon adsorbates on the nanostructured film surface, which is caused by tunable internal stress. On the other hand, the interfacial water molecules near the surface of ZnO nanostructured films have been identified as hydrophobic hydrogen structure by Fourier transform infrared/attenuated total reflection. Moreover, a remarkable near-band-edge emission peak shifting also can be observed in PL spectra due to the transition of internal stress state. Furthermore, our present ZnO nanostructured films also exhibited excellent transparency over 80% with a wise surface wetting switched from hydrophobic to hydrophilic states after exposing in ultraviolet (UV) surroundings. Our work demonstrated that the internal stress of the thin film not only induced natural wettability transition of ZnO nanostructured films, but also in turn affected the surface properties such as surface chemisorption.

  18. Internal stress induced natural self-chemisorption of ZnO nanostructured films

    NASA Astrophysics Data System (ADS)

    Chi, Po-Wei; Su, Chih-Wei; Wei, Da-Hua

    2017-02-01

    The energetic particles bombardment can produce large internal stress in the zinc oxide (ZnO) thin film, and it can be used to intentionally modify the surface characteristics of ZnO films. In this article, we observed that the internal stress increased from -1.62 GPa to -0.33 GPa, and the naturally wettability of the textured ZnO nanostructured films changed from hydrophobicity to hydrophilicity. According to analysis of surface chemical states, the naturally controllable wetting behavior can be attributed to hydrocarbon adsorbates on the nanostructured film surface, which is caused by tunable internal stress. On the other hand, the interfacial water molecules near the surface of ZnO nanostructured films have been identified as hydrophobic hydrogen structure by Fourier transform infrared/attenuated total reflection. Moreover, a remarkable near-band-edge emission peak shifting also can be observed in PL spectra due to the transition of internal stress state. Furthermore, our present ZnO nanostructured films also exhibited excellent transparency over 80% with a wise surface wetting switched from hydrophobic to hydrophilic states after exposing in ultraviolet (UV) surroundings. Our work demonstrated that the internal stress of the thin film not only induced natural wettability transition of ZnO nanostructured films, but also in turn affected the surface properties such as surface chemisorption.

  19. Morphological and optical investigation of Sol-Gel ZnO films

    NASA Astrophysics Data System (ADS)

    Ivanova, T.; Harizanova, A.; Petrova, A.

    2016-03-01

    This paper presents morphological and optical studies of the properties of spin-coated ZnO films depending on the annealing temperatures. The films microstructure was explored using a scanning nano-hardness measuring device of the NanoScan family, based on the principles of atomic force microscopy, in a constant frequency mode. The surface study revealed that the root-mean-square (RMS) surface roughness of 985.64×985.64 nm ZnO films becomes greater with the increase of the annealing temperature, but the film surface remains uniform and smooth. The results were confirmed by XRD analysis, which demonstrated that the crystallite size grew from 25 to 36 nm with the thermal treatments. The ZnO films possessed high transmittance in the visible spectral range and the optical band gaps in ZnO films varied from 3.25 eV to 3.52 eV. The optical and morphological properties of the ZnO films formed on Si and quartz substrates are very good. The sol-gel approach proposed for deposition of nanostructured ZnO films is promising for applications in optoelectronic devices or solar cells.

  20. Controlling growth rate anisotropy for formation of continuous ZnO thin films from seeded substrates

    NASA Astrophysics Data System (ADS)

    Zhang, R. H.; Slamovich, E. B.; Handwerker, C. A.

    2013-05-01

    Solution-processed zinc oxide (ZnO) thin films are promising candidates for low-temperature-processable active layers in transparent thin film electronics. In this study, control of growth rate anisotropy using ZnO nanoparticle seeds, capping ions, and pH adjustment leads to a low-temperature (90 ° C) hydrothermal process for transparent and high-density ZnO thin films. The common 1D ZnO nanorod array was grown into a 2D continuous polycrystalline film using a short-time pure solution method. Growth rate anisotropy of ZnO crystals and the film morphology were tuned by varying the chloride (Cl-) ion concentration and the initial pH of solutions of zinc nitrate and hexamethylenetetramine (HMTA), and the competitive adsorption effects of Cl- ions and HMTA ligands on the anisotropic growth behavior of ZnO crystals were proposed. The lateral growth of nanorods constituting the film was promoted by lowering the solution pH to accelerate the hydrolysis of HMTA, thereby allowing the adsorption effects from Cl- to dominate. By optimizing the growth conditions, a dense ˜100 nm thickness film was fabricated in 15 min from a solution of [Cl-]/[Zn2+] = 1.5 and pH= 4.8 ± 0.1. This film shows >80% optical transmittance and a field-effect mobility of 2.730 cm2 V-1 s-1 at zero back-gate bias.

  1. ZnO nanoparticles induced effects on nanomechanical behavior and cell viability of chitosan films

    PubMed Central

    Jayasuriya, Ambalangodage C.; Aryaei, Ashkan; Jayatissa, Ahalapitiya H.

    2014-01-01

    The aim of this paper is to develop novel chitosan-Zinc oxide nanocomposite films for biomedical applications. The films were fabricated with 1, 5, 10 and 15% w/w of Zinc Oxide (ZnO) nanoparticles (NPs) incorporated with chitosan (CS) using a simple method. The prepared nanocomposite films were characterized using atomic force microscopy, Raman and X-Ray diffraction studies. In addition, nano and micro mechanical properties were measured. It was found that the microhardness, nanohardness and its corresponding elastic modulus increased with the increasing of ZnO NPs percentage in the CS films. However, the ductility of films decreased as the percentage of ZnO NPs increased. Cell attachment and cytotoxicity of the prepared films at day two and five were evaluated in vitro using osteoblasts (OBs). It was observed that OB viability decreased in films with higher than 5% ZnO NPs. This result suggests that although ZnO NPs can improve the mechanical properties of pure CS films, only a low percentage of ZnO NPs can be applied for biomedical and bioengineering applications because of the cytotoxicity effects of these particles. PMID:23910265

  2. Study of Doped ZnO Films Synthesized by Combining Vapor Gases and Pulsed Laser Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, Ching-Hua; Lehoczky, Sandor L.; George, M. A.

    2000-01-01

    The properties and structure of the ZnO material are similar to those of the GaN. Since an excitonic binding energy of ZnO is about 60 meV, it has strong potential for excitonic lasing at the room temperature. This makes synthesizing ZnO films for applications attractive. However, there are several hurdles in fabricating electro-optical devices from ZnO. One of those is in growing doped p-type ZnO films. Although techniques have been developed for the doping of both p-type and n-type ZnO, this remains an area that can be improved. In this presentation, we will report the experimental results of using both thermal vapor and pulsed laser deposition to grow doped ZnO films. The films are deposited on (0001) sapphire, (001) Si and quartz substrates by ablating a ZnO target. The group III and V elements are introduced into the growth chamber using inner gases. Films are characterized by x-ray diffraction, scanning probe microscopy, energy dispersive spectroscopy, Auger electron spectroscopy, and electrical measurements. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. Film surface morphology reveals an island growth pattern, but the size and density of these islands vary with the composition of the reactive gases. The electrical resistivity also changes with the doped elements. The relationship between the doping elements, gas composition, and film properties will be discussed.

  3. Study of Doped ZnO Films Synthesized by Combining Vapor Gases and Pulsed Laser Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, Ching-Hua; Lehoczky, Sandor L.; George, M. A.

    2000-01-01

    The properties and structure of the ZnO material are similar to those of the GaN. Since an excitonic binding energy of ZnO is about 60 meV, it has strong potential for excitonic lasing at the room temperature. This makes synthesizing ZnO films for applications attractive. However, there are several hurdles in fabricating electro-optical devices from ZnO. One of those is in growing doped p-type ZnO films. Although techniques have been developed for the doping of both p-type and n-type ZnO, this remains an area that can be improved. In this presentation, we will report the experimental results of using both thermal vapor and pulsed laser deposition to grow doped ZnO films. The films are deposited on (0001) sapphire, (001) Si and quartz substrates by ablating a ZnO target. The group III and V elements are introduced into the growth chamber using inner gases. Films are characterized by x-ray diffraction, scanning probe microscopy, energy dispersive spectroscopy, Auger electron spectroscopy, and electrical measurements. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. Film surface morphology reveals an island growth pattern, but the size and density of these islands vary with the composition of the reactive gases. The electrical resistivity also changes with the doped elements. The relationship between the doping elements, gas composition, and film properties will be discussed.

  4. Synthesis and properties of Ag-doped ZnO films with room temperature ferromagnetism

    NASA Astrophysics Data System (ADS)

    Xu, Qin; Wang, Zhi-Jun; Chang, Ze-Jiang; Liu, Jing-Jin; Ren, Ya-Xuan; Sun, Hui-Yuan

    2016-12-01

    A series of Ag-doped ZnO films were prepared by DC magnetron sputtering. XRD and SEM results showed that the doping amount of Ag had a great influence on the films' morphology and ferromagnetism, and their magnetism can be improved by doping an appropriate amount of Ag. The theoretical analysis suggested that the magnetism resulted mainly from the film grain boundary surfaces. Further research revealed that these films had strong timeliness. Such a result indicated that the room temperature ferromagnetism of Ag-doped ZnO films did not stem from the cation vacancies but from the oxygen vacancies on the boundary surfaces.

  5. Investigation of sol-gel yttrium doped ZnO thin films: structural and optical properties

    NASA Astrophysics Data System (ADS)

    Ivanova, T.; Harizanova, A.; Koutzarova, T.; Vertruyen, B.

    2016-02-01

    Nanostructured metal oxide films are extensively studied due to their numerous applications such as optoelectronic devices, sensors. In this work, we report the Y-Zn-O nanostructured films prepared by sol-gel technology from sols with different concentration of yttrium precursor, followed by post-annealing treatment. The Y doped ZnO thin films have been deposited on Si and quartz substrates by spin coating method, then treated at temperatures ranging from 300-800oC. XRD analysis reveals modification of the film structure and phases in the doped ZnO films.

  6. Assembly of ordered ZnO porous thin films by cooperative assembly method using polystyrene spheres and ultrafine ZnO particles

    SciTech Connect

    Liu Zhifeng; Jin Zhengguo . E-mail: zhgjin@tju.edu.cn; Li Wei; Qiu Jijun

    2006-01-05

    Ordered ZnO porous thin films were fabricated by cooperative assembly method using polystyrene sphere (PS) and ultrafine ZnO particles, in which ultrafine ZnO particles were directly assembled in the voids of PS while the template was being assembled by capillary forces. The influence of experimental parameters, such as evaporation temperature, ZnO concentration and the concentration ratio of PS/ZnO on morphology of the porous structure was mainly studied. The results showed that an ordered porous structure could be obtained by this method. X-ray diffraction (XRD) spectra indicated the porous ZnO thin film was wurtzite structure. The transmissivity decreased with the decrease of wavelength, but still kept above 80% beyond the wavelength of 550 nm. Optical band gap of the ZnO thin film was 3.13 eV.

  7. Polarity Effects of Substrate Surface in Epitaxial ZnO Film Growth

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, C.-H.; Lehoczky, S. L.; Harris, M. T.; Callahan, M. J.; George, M. A.; McCarty, P.

    1999-01-01

    Epitaxial ZnO films were grown on the two polar surfaces (0-face and Zn-face) of (0001) ZnO single crystal substrates using off-axis magnetron sputtering deposition. As a comparison, films are also deposited on the (000 I) Al203 substrates. It is found that the two polar surfaces have different photoluminescence (PL) spectrum, surface structure and morphology, which are strongly inference the epitaxial film growth. The morphology and structure of epitaxial films on the ZnO substrates are different from the film on the Al203 substrates. An interesting result shows that high temperature annealing of ZnO single crystals will improve the surface structure on the O-face surface rather than the opposite Surface. The measurements of PL, low-angle incident x-ray diffraction, and atomic force microscopy of ZnO films indicate that the O-terminated surface is better for ZnO epitaxial film growth using reactive sputtering deposition.

  8. Structure and morphology of magnetron sputter deposited ultrathin ZnO films on confined polymeric template

    NASA Astrophysics Data System (ADS)

    Singh, Ajaib; Schipmann, Susanne; Mathur, Aakash; Pal, Dipayan; Sengupta, Amartya; Klemradt, Uwe; Chattopadhyay, Sudeshna

    2017-08-01

    The structure and morphology of ultra-thin zinc oxide (ZnO) films with different film thicknesses on confined polymer template were studied through X-ray reflectivity (XRR) and grazing incidence small angle X-ray scattering (GISAXS). Using magnetron sputter deposition technique ZnO thin films with different film thicknesses (<10 nm) were grown on confined polystyrene with ∼2Rg film thickness, where Rg ∼ 20 nm (Rg is the unperturbed radius of gyration of polystyrene, defined by Rg = 0.272 √M0, and M0 is the molecular weight of polystyrene). The detailed internal structure, along the surface/interfaces and the growth direction of the system were explored in this study, which provides insight into the growth procedure of ZnO on confined polymer and reveals that a thin layer of ZnO, with very low surface and interface roughness, can be grown by DC magnetron sputtering technique, with approximately full coverage (with bulk like electron density) even in nm order of thickness, in 2-7 nm range on confined polymer template, without disturbing the structure of the underneath template. The resulting ZnO-polystyrene hybrid systems show strong ZnO near band edge (NBE) and deep-level (DLE) emissions in their room temperature photoluminescence spectra, where the contribution of DLE gets relatively stronger with decreasing ZnO film thickness, indicating a significant enhancement of surface defects because of the greater surface to volume ratio in thinner films.

  9. Epitaxial ZnO/LiNbO{sub 3}/ZnO stacked layer waveguide for application to thin-film Pockels sensors

    SciTech Connect

    Akazawa, Housei Fukuda, Hiroshi

    2015-05-15

    We produced slab waveguides consisting of a LiNbO{sub 3} (LN) core layer that was sandwiched with Al-doped ZnO cladding layers. The ZnO/LN/ZnO stacked layers were grown on sapphire C-planes by electron cyclotron resonance (ECR) plasma sputtering and were subjected to structural, electrical, and optical characterizations. X-ray diffraction confirmed that the ZnO and LN layers were epitaxial without containing misoriented crystallites. The presence of 60°-rotational variants of ZnO and LN crystalline domains were identified from X-ray pole figures. Cross-sectional transmission electron microscopy images revealed a c-axis orientated columnar texture for LN crystals, which ensured operation as electro-optic sensors based on optical anisotropy along longitudinal and transversal directions. The interfacial roughness between the LN core and ZnO bottom layers as well as that between the ZnO top and the LN core layers was less than 20 nm, which agreed with surface images observed with atomic force microscopy. Outgrowth of triangular LN crystalline domains produced large roughness at the LN film surface. The RMS roughness of the LN film surface was twice that of the same structure grown on sapphire A-planes. Vertical optical transmittance of the stacked films was higher than 85% within the visible and infrared wavelength range. Following the approach adopted by Teng and Man [Appl. Phys. Lett. 56, 1734 (1990)], ac Pockels coefficients of r{sub 33} = 24-28 pm/V were derived for c-axis oriented LN films grown on low-resistive Si substrates. Light propagation within a ZnO/LN/ZnO slab waveguide as well as within a ZnO single layer waveguide was confirmed. The birefringence of these waveguides was 0.11 for the former and 0.05 for the latter.

  10. Synthesis, structural and optical characterization of undoped, N-doped ZnO and co-doped ZnO thin films

    SciTech Connect

    Pathak, Trilok Kumar Kumar, R.; Purohit, L. P.

    2015-05-15

    ZnO, N-doped ZnO and Al-N co-doped ZnO thin films were deposited on ITO coated corning glass by spin coater using sol-gel method. The films were annealed in air at 450°C for one hour. The crystallographic structure and morphology of the films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) respectively. The X-ray diffraction results confirm that the thin films are of wurtzite hexagonal with a very small distortion. The optical properties were investigated by transmission spectra of different films using spectrophotometer (Shimadzu UV-VIS-NIR 3600). The results indicate that the N doped ZnO thin films have obviously enhanced transmittance in visible region. Moreover, the thickness of the films has strong influences on the optical constants.

  11. Synthesis, structural and optical characterization of undoped, N-doped ZnO and co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Pathak, Trilok Kumar; Kumar, R.; Purohit, L. P.

    2015-05-01

    ZnO, N-doped ZnO and Al-N co-doped ZnO thin films were deposited on ITO coated corning glass by spin coater using sol-gel method. The films were annealed in air at 450°C for one hour. The crystallographic structure and morphology of the films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) respectively. The X-ray diffraction results confirm that the thin films are of wurtzite hexagonal with a very small distortion. The optical properties were investigated by transmission spectra of different films using spectrophotometer (Shimadzu UV-VIS-NIR 3600). The results indicate that the N doped ZnO thin films have obviously enhanced transmittance in visible region. Moreover, the thickness of the films has strong influences on the optical constants.

  12. Biotinylation of ZnO nanoparticles and thin films: a two-step surface functionalization study.

    PubMed

    SelegArd, Linnéa; Khranovskyy, Volodymyr; Söderlind, Fredrik; Vahlberg, Cecilia; Ahrén, Maria; Käll, Per-Olov; Yakimova, Rositza; Uvdal, Kajsa

    2010-07-01

    This study reports ZnO nanoparticles and thin film surface modification using a two-step functionalization strategy. A small silane molecule was used to build up a stabilizing layer and for conjugation of biotin (vitamin B7), as a specific tag. Biotin was chosen because it is a well-studied bioactive molecule with high affinity for avidin. ZnO nanoparticles were synthesized by electrochemical deposition under oxidizing condition, and ZnO films were prepared by plasma-enhanced metal-organic chemical vapor deposition. Both ZnO nanoparticles and ZnO thin films were surface modified by forming a (3-mercaptopropyl)trimethoxysilane (MPTS) layer followed by attachment of a biotin derivate. Iodoacetyl-PEG2-biotin molecule was coupled to the thiol unit in MPTS through a substitution reaction. Powder X-ray diffraction, transmission electron microscopy, X-ray photoemission electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and near-edge X-ray absorption fine structure spectroscopy were used to investigate the as-synthesized and functionalized ZnO materials. The measurements showed highly crystalline materials in both cases with a ZnO nanoparticle diameter of about 5 nm and a grain size of about 45 nm for the as-grown ZnO thin films. The surface modification process resulted in coupling of silanes and biotin to both the ZnO nanoparticles and ZnO thin films. The two-step functionalization strategy has a high potential for specific targeting in bioimaging probes and for recognition studies in biosensing applications.

  13. ZnO Thin Films Deposited on Textile Material Substrates for Biomedical Applications

    NASA Astrophysics Data System (ADS)

    Duta, L.; Popescu, A. C.; Dorcioman, G.; Mihailescu, I. N.; Stan, G. E.; Zgura, I.; Enculescu, I.; Dumitrescu, I.

    We report on the coating with ZnO adherent thin films of cotton woven fabrics by Pulsed laser deposition technique in order to obtain innovative textile materials, presenting protective effects against UV radiations and antifungal action.

  14. Light Control of Ferromagnetism in ZnO Films on Pt Substrate at Room Temperature

    PubMed Central

    Xie, Jihao; Qin, Hongwei; Hao, Yanming; Cheng, Bin; Liu, Weikang; Liu, Liang; Ren, Shaoqing; Zhou, Guangjun; Ji, Ziwu; Hu, Jifan

    2017-01-01

    The control of ferromagnetism by light at room temperature is essential for the development of some optical-magnetic coupling devices, data storage and quantum computation techniques. In the present work, we demonstrate that the ferromagnetism of a semiconducting ZnO film on Pt substrate can be controlled by nonpolarized ultraviolet or violet light. The illumination of light with sufficiently high frequency photons could excite photogenerated electron-hole pairs in the semiconducting ZnO film. The amount of oxygen vacancies in the ZnO film and the appearance of built-in electric field due to the heterostructured ZnO/Pt may play important roles in the light-induced changes in the ferromagnetism of the ZnO film. PMID:28393834

  15. Synthesis of Imine-Bearing ZnO Nanoparticle Thin Films and Characterization of Their Structural, Morphological and Optical Properties.

    PubMed

    Kaur, Narinder; Sharma, Sanjeev K; Kim, Deuk Young; Sharma, Hemant; Singh, Narinder

    2015-10-01

    We are presenting the first report on the fabrication of imine-bearing ZnO nanoparticle thin films grown on Corning glass by spin coating. The sol was prepared by dissolving imine-bearing ZnO nanoparticles in dimethylsulfoxide (DMSO). The thickness of the films was manipulated to be 125-200 nm. The X-ray diffraction (XRD) analysis showed hexagonal wurtzite structure of imine-bearing ZnO nanoparticles thin films with a (002) preferential orientation. The stretching of chemical bonds of the imine linkage and Zn-O in imine-bearing ZnO nanoparticle thin films was confirmed by Fourier transform infrared spectroscopy (FTIR). The grain size of the films increased with increasing the thickness of the films due to the number of coatings and subsequently dried at 200 °C. The transmittance of imine-bearing ZnO nanoparticle thin films was observed to be ≥94%, which was in close agreement to pure ZnO thin films in the visible region. The bandgap of imine-bearing ZnO nanoparticle thin films (3.04 eV), evaluated from Tauc's plot, was observed to be lower than that of pure ZnO (3.21 eV), which is attributed to the interaction of the ZnO nanoparticles with the imine receptor.

  16. Frictional Properties of UV illuminated ZnO Thin Films Grown by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Chiu, Hsiang-Chih; Chang, Huan-Pu; Lo, Fang-Yu; Yeh, Yu-Ting; Department of Physics, National Taiwan Normal University Collaboration

    Zinc Oxide (ZnO) nanostructures have potential applications in nano-electro-mechanical systems (NEMS) due to their unique physical properties. ZnO is also an excellent lubricant and hence a promising candidate for protective coatings in NEMS. By means of atomic force microscopy (AFM), we have investigated the frictional properties of ZnO thin films prepared by pulsed laser deposition technique. In addition, UV illumination is used to convert the surface wettability of ZnO thin films from being more hydrophobic to superhydrophilic via the photo-catalyst effect. We found that the frictional properties of the UV illuminated, superhydrophilic ZnO surface are strongly dependent on the environment humidity. While for hydrophobic ZnO, no such dependence is found. The observed frictional behaviors can be explained by the interplay between the surface roughness, environmental humidity and the presence of nanoscale capillary condensation forming between surface asperities at the tip-ZnO contact. Our results might find applications in future ZnO related NEMS. Frictional Properties of UV illuminated ZnO Thin Films Grown by Pulsed Laser Deposition.

  17. Enhanced blue emission of ZnO films deposited on AlN substrates

    NASA Astrophysics Data System (ADS)

    Ding, Jijun; Chen, Haixia; Fu, Haiwei

    2017-06-01

    Taking into account the individual excellent optical properties of ZnO and AlN, the combination of ZnO with AlN may give the enhanced performances. Based on similar lattice constants between ZnO and AlN, considering that AlN is a promising high power integrated circuit substrate material, ZnO films are deposited on AlN substrates using magnetron sputtering. We find that AlN substrate shows an excellent transparency with an average transmittance of about 80%. As ZnO films are deposited on AlN substrate, average transmittance still maintain above 80% except for the UV absorption edge shifted to the longer wavelength. In addition, AlN substrate shows two emission peaks at 420 and 468 nm ascribed to Al vacancies with different charge states. As ZnO films are deposited on AlN substrates in pure Ar gas, the intensity of both peaks attain the maximum. After introducing O2 gas, they conversely decreases and attains the minimum. PL emissions increase again as the sample is annealed in vacuum. Excellent blue emissions are obtained due to the synergistic effect between ZnO and AlN. This work may help the development of the practical optoelectronic devices based on ZnO and AlN materials.

  18. Electroluminescence of ZnO nanorods embedded in a polymer film

    NASA Astrophysics Data System (ADS)

    Duan, Li; Wang, Pei; Wei, Feng; Zhang, Wenxue; Yao, Ran; Xia, Huiyun

    2014-12-01

    Vertically aligned ZnO nanorods (NRs) were grown on a ZnO film and embedded in the poly(3,4 ethyle-nedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) to fabricate a ZnO film/ZnO nanorods/polymer hybrid structured light emitting diode (LED). The embedded ZnO NRs can increase the injected current of the ZnO/PEDOT:PSS heterojunction and play key roles in the emission process. We demonstrate the ZnO NRs are the radiative recombination zone in the LED. Electroluminescence (EL) spectrum of the hybrid LED consists of one ultraviolet (UV) near-band-edge emission peak and two visible deep-level emission peaks. The relative intensities of the three peaks are evidently influenced by the applied voltage, which can be clearly explained by the energy band diagram.

  19. Study on Ni-doped ZnO films as gas sensors

    NASA Astrophysics Data System (ADS)

    Rambu, A. P.; Ursu, L.; Iftimie, N.; Nica, V.; Dobromir, M.; Iacomi, F.

    2013-09-01

    Ni doped ZnO films were obtained by spin coating, using zinc acetate and nickel acetate as starting materials and N,N-dimethylformamide as solvent. The X-ray diffraction (XRD) analysis indicates that, spin coated films posses a polycrystalline structure. Ni doped ZnO films are single phase and no trace of nickel metal or binary zinc nickel phases are observed. The values of some structural parameters (crystallite size, surface roughness) are varying with the variation of Ni concentration. The sensitivity of Ni:ZnO films, at three different gasses (ammonia, liquefied petroleum gas and ethanol) was investigated. Obtained results indicate that our films are most sensitive to ammonia, the operating temperature was found to be 190 °C and the response time is 35 s. The gas sensitivity was found to depend on the Ni concentration in ZnO films.

  20. Influence of surface defects in ZnO thin films on its biosensing response characteristic

    SciTech Connect

    Saha, Shibu; Gupta, Vinay

    2011-09-15

    Highly c-axis oriented zinc oxide (ZnO) thin films deposited by rf magnetron sputtering under varying processing pressure (20-50 mT) in a reactive gas mixture of argon and oxygen were studied for biosensing application. The as-deposited ZnO thin films were in a state of compressive stress having defects related to interstitial Zn and antisite oxygen. Glucose oxidase has been chosen as the model enzyme in the present study and was immobilized on the surface of ZnO thin films deposited on indium tin oxide coated Corning Glass substrate. The studies reveal a correlation between the biosensing characteristic and the presence of defects in the ZnO films. The ZnO films deposited under high pressure (50 mT) are found to be more sensitive for biosensing application due to availability of more surface area for effective immobilization of biomolecules and exhibits a suitable microenvironment with good electron transfer characteristic. The obtained results highlight the importance of desired microstate besides availability of suitable native defects in the ZnO thin film for exhibiting enhanced biosensing response.

  1. Influence of surface defects in ZnO thin films on its biosensing response characteristic

    NASA Astrophysics Data System (ADS)

    Saha, Shibu; Gupta, Vinay

    2011-09-01

    Highly c-axis oriented zinc oxide (ZnO) thin films deposited by rf magnetron sputtering under varying processing pressure (20-50 mT) in a reactive gas mixture of argon and oxygen were studied for biosensing application. The as-deposited ZnO thin films were in a state of compressive stress having defects related to interstitial Zn and antisite oxygen. Glucose oxidase has been chosen as the model enzyme in the present study and was immobilized on the surface of ZnO thin films deposited on indium tin oxide coated Corning Glass substrate. The studies reveal a correlation between the biosensing characteristic and the presence of defects in the ZnO films. The ZnO films deposited under high pressure (50 mT) are found to be more sensitive for biosensing application due to availability of more surface area for effective immobilization of biomolecules and exhibits a suitable microenvironment with good electron transfer characteristic. The obtained results highlight the importance of desired microstate besides availability of suitable native defects in the ZnO thin film for exhibiting enhanced biosensing response.

  2. Synthesis and characterization of Sb doped ZnO thin films for photodetector application

    NASA Astrophysics Data System (ADS)

    Mohite, S. V.; Rajpure, K. Y.

    2014-02-01

    We report properties of metal-semiconductor-metal (MSM) photoconductive UV detectors based on Sb-doped ZnO thin films. Highly c-axis oriented Sb-doped ZnO thin films were prepared by spray pyrolysis technique onto glass substrates. Optical properties and photocurrent measurements were carried out to study optoelectronic properties of Sb-doped ZnO thin films. These films are highly transparent in visible region and exhibit a steep absorption edge at 365 nm. The electrical resistivity measurement showed semiconducting behaviors of Sb-doped ZnO thin films. All Sb-doped ZnO thin films exhibit n-type electrical conductivity. I-V characteristics of photodetector devices were analyzed by applying 5 V bias. The 3% Sb doped ZnO photodetector shows higher responsivity of 5.1 A/W at 365 nm under 10 μW/cm2 photo-illumination. In order to check the maximal (for the rise) or minimal (for the fall) level of photocurrent, the results on photodetector for 30 s ON and OFF cycles of illumination have been reported.

  3. Growth of cluster assembled ZnO film by nanocluster beam deposition technique

    SciTech Connect

    Halder, Nilanjan

    2015-06-24

    ZnO is considered as one of the most promising material for optoelectronic devices. The present work emphasizes production of cluster assembled ZnO films by a UHV nanocluster beam deposition technique where the nanoclusters were produced in a laser vaporization cluster source. The microstructural and the optical properties of the ZnO nanocluster film deposited were investigated. As the wet chemical processes are not compatible with current solid state methods of device fabrication, therefore alternative UHV technique described in the paper is the need of the hour.

  4. Water-repellent ZnO nanowires films obtained by octadecylsilane self-assembled monolayers

    NASA Astrophysics Data System (ADS)

    Badre, C.; Pauporté, T.; Turmine, M.; Dubot, P.; Lincot, D.

    2008-05-01

    Zinc oxide (ZnO) films with well-controlled morphologies have been prepared by electrochemical deposition. A seed layer of nanocrystallites of ZnO was prepared from which ZnO nanowires were grown from a low concentration of ZnCl 2. The nanowires are rough and dense and their superhydrophilicity is enhanced. A treatment with an alkylsilane (octadecylsilane) yields superhydrophobic surfaces with very high advancing and receding contact angles 173°/172° and a very low roll-off angle. Our superhydrophobic films are stable for more than 6 months.

  5. CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES: Structural and Electrical Properties of Single Crystalline Ga-Doped ZnO Thin Films Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Lu, Zhong-Lin; Zou, Wen-Qin; Xu, Ming-Xiang; Zhang, Feng-Ming; Du, You-Wei

    2009-11-01

    High-quality Ga-doped ZnO (ZnO:Ga) single crystalline films with various Ga concentrations are grown on a-plane sapphire substrates using molecular-beam epitaxy. The site configuration of doped Ga atoms is studied by means of x-ray absorption spectroscopy. It is found that nearly all Ga can substitute into ZnO lattice as electrically active donors, a generating high density of free carriers with about one electron per Ga dopant when the Ga concentration is no more than 2%. However, further increasing the Ga doping concentration leads to a decrease of the conductivity due to partial segregation of Ga atoms to the minor phase of the spinel ZnGa2O4 or other intermediate phase. It seems that the maximum solubility of Ga in the ZnO single crystalline film is about 2 at.% and the lowest resistivity can reach 1.92 × 10-4 Ω·cm at room temperature, close to the best value reported. In contrast to ZnO:Ga thin film with 1% or 2% Ga doping, the film with 4% Ga doping exhibits a metal semiconductor transition at 80 K. The scattering mechanism of conducting electrons in single crystalline ZnO:Ga thin film is discussed.

  6. Enhanced the photocatalytic activity of Ni-doped ZnO thin films: Morphological, optical and XPS analysis

    NASA Astrophysics Data System (ADS)

    Abdel-wahab, M. Sh.; Jilani, Asim; Yahia, I. S.; Al-Ghamdi, Attieh A.

    2016-06-01

    Pure and Ni-doped ZnO thin films with different concentration of Ni (3.5 wt%, 5 wt%, 7 wt%) were prepared by DC/RF magnetron sputtering technique. The X-rays diffraction pattern showed the polycrystalline nature of pure and Ni-doped ZnO thin films. The surface morphology of pure and Ni doped ZnO thin films were investigated through atomic force microscope, which indicated the increase in the grain dimension and surface roughness with increasing the Ni doping. The UV-Visible transmission spectra showed the decrease in the transmittance of doped ZnO thin films with the incorporation of Ni dopants. The surface and chemical state analysis of pure and Ni doped ZnO thin films were investigated by X-rays photoelectron spectroscopy (XPS). The photocatalytic activities were evaluated by an aqueous solution of methyl green dye. The tungsten lamp of 500 W was used as a source of visible light for photocatalytic study. The degradation results showed that the Ni-doped ZnO thin films exhibit highly enhanced photocatalytic activity as compared to the pure ZnO thin films. The enhanced photocatalytic activities of Ni-doped ZnO thin films were attributed to the enhanced surface area (surface defects), surface roughness and decreasing the band gap of Ni-doped ZnO thin films. Our work supports the applications of thin film metal oxides in waste water treatment.

  7. Pulsed-laser deposition of ZnO and related compound thin films for optoelectronics

    NASA Astrophysics Data System (ADS)

    Millon, Eric; Perrière, Jacques; Tricot, Sylvain; Boulmer-Leborgne, Chantal

    2008-05-01

    ZnO is a wide and direct band-gap material (3.37 eV at room temperature) making this compound very suitable for UV photodetector applications as well as for UV and blue light emitting devices. As an electronic conductor, ZnO may be used as transparent and conducting electrodes for flat panel displays and solar cells. ZnO doped with various atoms can also lead to new or enhanced functional properties. For example, doping with Al, Ga, In, Si or H allows decreasing its resistivity to below 10-4 Ω.cm, while keeping the high optical transparency. Rare-earth doped ZnO thin films have been studied for optics and optoelectronics such as visible or infrared emitting devices, planar optical waveguide amplifiers. Ferromagnetic semiconductors can be obtained by doping ZnO with transition metal atoms (Mn, Co, Ni...) that could be used as spin injectors in spintronics. These new and exciting properties of pure and doped ZnO request the use of thin films or multilayer structures. ZnO thin film growth by pulsed-laser deposition (PLD) with or without any dopants or alloyed atoms has been intensively studied. In this paper, we will review the aspects of ZnO thin films grown by PLD, in order to prepare dense, stoichiometric and crystalline epitaxied ZnO layers or to form nanocrystalline films. Then, the optical and electrical properties will be discussed with a special emphasis on the growth conditions in relation to the physical properties for applications in p-n junctions, light emission devices, spintronics and bandgap tuning.

  8. ZrO{sub 2}-ZnO composite thin films for humidity sensing

    SciTech Connect

    Velumani, M. Sivacoumar, R.; Alex, Z. C.; Meher, S. R.; Balakrishnan, L.

    2016-05-23

    ZrO{sub 2}-ZnO composite thin films were grown by reactive DC magnetron sputtering. X-ray diffraction studies reveal the composite nature of the films with separate ZnO and ZrO{sub 2} phase. Scanning electron microscopy studies confirm the nanocrystalline structure of the films. The films were studied for their impedometric relative humidity (RH) sensing characteristics. The complex impedance plot was fitted with a standard equivalent circuit consisting of an inter-granular resistance and a capacitance in parallel. The DC resistance was found to be decreasing with increase in RH.

  9. Atomic layer deposition of Al-doped ZnO thin films

    SciTech Connect

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro

    2013-01-15

    Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

  10. Highly textured and transparent RF sputtered Eu2O3 doped ZnO films.

    PubMed

    Sreedharan, Remadevi Sreeja; Ganesan, Vedachalaiyer; Sudarsanakumar, Chellappan Pillai; Bhavsar, Kaushalkumar; Prabhu, Radhakrishna; Mahadevan Pillai, Vellara Pappukutty Pillai

    2015-01-01

    Background : Zinc oxide (ZnO) is a wide, direct band gap II-VI oxide semiconductor. ZnO has large exciton binding energy at room temperature, and it is a good host material for obtaining visible and infrared emission of various rare-earth ions. Methods : Europium oxide (Eu2O3) doped ZnO films are prepared on quartz substrate using radio frequency (RF) magnetron sputtering with doping concentrations 0, 0.5, 1, 3 and 5 wt%. The films are annealed in air at a temperature of 773 K for 2 hours. The annealed films are characterized using X-ray diffraction (XRD), micro-Raman spectroscopy, atomic force microscopy, ultraviolet (UV)-visible spectroscopy and photoluminescence (PL) spectroscopy. Results : XRD patterns show that the films are highly c-axis oriented exhibiting hexagonalwurtzite structure of ZnO. Particle size calculations using Debye-Scherrer formula show that average crystalline size is in the range 15-22 nm showing the nanostructured nature of the films. The observation of low- and high-frequency E2 modes in the Raman spectra supports the hexagonal wurtzite structure of ZnO in the films. The surface morphology of the Eu2O3 doped films presents dense distribution of grains. The films show good transparency in the visible region. The band gaps of the films are evaluated using Tauc plot model. Optical constants such as refractive index, dielectric constant, loss factor, and so on are calculated using the transmittance data. The PL spectra show both UV and visible emissions. Conclusion : Highly textured, transparent, luminescent Eu2O3 doped ZnO films have been synthesized using RF magnetron sputtering. The good optical and structural properties and intense luminescence in the ultraviolet and visible regions from the films suggest their suitability for optoelectronic applications.

  11. Highly textured and transparent RF sputtered Eu2O3 doped ZnO films

    PubMed Central

    Sreedharan, Remadevi Sreeja; Ganesan, Vedachalaiyer; Sudarsanakumar, Chellappan Pillai; Bhavsar, Kaushalkumar; Prabhu, Radhakrishna; Mahadevan Pillai, Vellara Pappukutty Pillai

    2015-01-01

    Background Zinc oxide (ZnO) is a wide, direct band gap II-VI oxide semiconductor. ZnO has large exciton binding energy at room temperature, and it is a good host material for obtaining visible and infrared emission of various rare-earth ions. Methods Europium oxide (Eu2O3) doped ZnO films are prepared on quartz substrate using radio frequency (RF) magnetron sputtering with doping concentrations 0, 0.5, 1, 3 and 5 wt%. The films are annealed in air at a temperature of 773 K for 2 hours. The annealed films are characterized using X-ray diffraction (XRD), micro-Raman spectroscopy, atomic force microscopy, ultraviolet (UV)-visible spectroscopy and photoluminescence (PL) spectroscopy. Results XRD patterns show that the films are highly c-axis oriented exhibiting hexagonalwurtzite structure of ZnO. Particle size calculations using Debye-Scherrer formula show that average crystalline size is in the range 15–22 nm showing the nanostructured nature of the films. The observation of low- and high-frequency E2 modes in the Raman spectra supports the hexagonal wurtzite structure of ZnO in the films. The surface morphology of the Eu2O3 doped films presents dense distribution of grains. The films show good transparency in the visible region. The band gaps of the films are evaluated using Tauc plot model. Optical constants such as refractive index, dielectric constant, loss factor, and so on are calculated using the transmittance data. The PL spectra show both UV and visible emissions. Conclusion Highly textured, transparent, luminescent Eu2O3 doped ZnO films have been synthesized using RF magnetron sputtering. The good optical and structural properties and intense luminescence in the ultraviolet and visible regions from the films suggest their suitability for optoelectronic applications. PMID:25765728

  12. Surface Engineering of ZnO Thin Film for High Efficiency Planar Perovskite Solar Cells

    PubMed Central

    Tseng, Zong-Liang; Chiang, Chien-Hung; Wu, Chun-Guey

    2015-01-01

    Sputtering made ZnO thin film was used as an electron-transport layer in a regular planar perovskite solar cell based on high quality CH3NH3PbI3 absorber prepared with a two-step spin-coating. An efficiency up to 15.9% under AM 1.5G irradiation is achieved for the cell based on ZnO film fabricated under Ar working gas. The atmosphere of the sputtering chamber can tune the surface electronic properties (band structure) of the resulting ZnO thin film and therefore the photovoltaic performance of the corresponding perovskite solar cell. Precise surface engineering of ZnO thin film was found to be one of the key steps to fabricate ZnO based regular planar perovskite solar cell with high power conversion efficiency. Sputtering method is proved to be one of the excellent techniques to prepare ZnO thin film with controllable properties. PMID:26411577

  13. Effects of synthesizing parameters on surface roughness and contact angles of ZnO nanowire films.

    PubMed

    Jing, Weixuan; Wang, Bing; Niu, Lingling; Jiang, Zhuangde; Qi, Han; Chen, Lujia; Zhou, Fan

    2014-06-01

    Effects of the synthesizing parameters on the surface roughness and the contact angles of ZnO nanowire films were studied in this paper. ZnO nanowire films were synthesized with the hydrothermal method on glass substrates, and the synthesizing parameters include the concentrations of the growth solution and the seed layer solution, the growth time span as well as the temperature. Atomic force microscopy and scanning electron microscopy were employed respectively to characterize the surface and the profile roughness of ZnO nanowire films. The measurement results by atomic force microscopy were in agreement with that by scanning electron microscopy, hence the former was used for the investigation of aforementioned effects. Relationships between the synthesizing parameters, the surface roughness and the contact angles of ZnO nanowire films were established, revealing that the synthesizing parameters affected significantly not only the surface roughness but also the contact angles of ZnO nanowire films. The results can be used for batch fabrication of ZnO nanowire-based structures and these structures-based sensors in a wide variety of applications.

  14. Impact of nanostructured thin ZnO film in ultraviolet protection

    PubMed Central

    Sasani Ghamsari, Morteza; Alamdari, Sanaz; Han, Wooje; Park, Hyung-Ho

    2017-01-01

    Nanoscale ZnO is one of the best choices for ultraviolet (UV) protection, not only because of its antimicrobial properties but also due to its potential application for UV preservation. However, the behavior of nanostructured thin ZnO films and long-term effects of UV-radiation exposure have not been studied yet. In this study, we investigated the UV-protection ability of sol gel-derived thin ZnO films after different exposure times. Scanning electron microscopy, atomic force microscopy, and UV-visible optical spectroscopy were carried out to study the structure and optical properties of the ZnO films as a function of the UV-irradiation time. The results obtained showed that the prepared thin ZnO films were somewhat transparent under the visible wavelength region and protective against UV radiation. The UV-protection factor was 50+ for the prepared samples, indicating that they were excellent UV protectors. The deposited thin ZnO films demonstrated promising antibacterial potential and significant light absorbance in the UV range. The experimental results suggest that the synthesized samples have potential for applications in the health care field. PMID:28096668

  15. Impact of nanostructured thin ZnO film in ultraviolet protection.

    PubMed

    Sasani Ghamsari, Morteza; Alamdari, Sanaz; Han, Wooje; Park, Hyung-Ho

    2017-01-01

    Nanoscale ZnO is one of the best choices for ultraviolet (UV) protection, not only because of its antimicrobial properties but also due to its potential application for UV preservation. However, the behavior of nanostructured thin ZnO films and long-term effects of UV-radiation exposure have not been studied yet. In this study, we investigated the UV-protection ability of sol gel-derived thin ZnO films after different exposure times. Scanning electron microscopy, atomic force microscopy, and UV-visible optical spectroscopy were carried out to study the structure and optical properties of the ZnO films as a function of the UV-irradiation time. The results obtained showed that the prepared thin ZnO films were somewhat transparent under the visible wavelength region and protective against UV radiation. The UV-protection factor was 50+ for the prepared samples, indicating that they were excellent UV protectors. The deposited thin ZnO films demonstrated promising antibacterial potential and significant light absorbance in the UV range. The experimental results suggest that the synthesized samples have potential for applications in the health care field.

  16. Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Li, Shao-Juan; He, Xin; Han, De-Dong; Sun, Lei; Wang, Yi; Han, Ru-Qi; Chan, Man-Sun; Zhang, Sheng-Dong

    2012-01-01

    The structural and electrical properties of ZnO films deposited by reactive radiofrequency sputtering with a metallic zinc target are systematically investigated. While the as-deposited ZnO film is in a poly-crystalline structure when the partial pressure of oxygen (pO2) is low, the grain size abruptly decreases to a few nanometers as pO2 increases to a critical value, and then becomes almost unchanged with a further increase in pO2. In addition, the resistivity of the ZnO films shows a non-monotonic dependence on pO2, including an abrupt transition of about seven orders of magnitude at the critical pO2. Thin-film transistors (TFTs) with the nanocrystalline ZnO films as channel layers have an on/off current ratio of more than 107, an off-current in the order of pA, a threshold voltage of about 4.5 V, and a carrier mobility of about 2cm2/(V·s). The results show that radiofrequency sputtered ZnO with a zinc target is a promising candidate for high-performance ZnO TFTs.

  17. Fabrication of Al-Doped ZnO Film with High Conductivity Induced by Photocatalytic Activity

    NASA Astrophysics Data System (ADS)

    Hong, Jeongsoo; Katsumata, Ken-ichi; Matsushita, Nobuhiro

    2016-10-01

    We have fabricated Al-doped ZnO films by a spin-spray method, achieving high conductivity by Al-ion doping and photocatalytic activity of the ZnO. The surface morphology of the as-deposited films was varied by changing the Al concentration and addition of citrate ions. As-deposited Al-doped ZnO film without citrate ions showed rod array structure with increasing rod width as the Al concentration was increased. Meanwhile, Al-doped ZnO film deposited with addition of citrate ions changed to exhibit dense and continuous surface morphology with high transmittance of 85%. The lowest resistivity recorded for undoped and Al-doped ZnO film was 2.1 × 10-2 Ω cm and 5.9 × 10-3 Ω cm, after ultraviolet (UV) irradiation. The reason for the decreased resistivity is thought to be that Al-ion doping and the photocatalytic activity of ZnO contributed to improve the conductivity.

  18. Ohmic-Rectifying Conversion of Ni Contacts on ZnO and the Possible Determination of ZnO Thin Film Surface Polarity

    PubMed Central

    Saw, Kim Guan; Tneh, Sau Siong; Tan, Gaik Leng; Yam, Fong Kwong; Ng, Sha Shiong; Hassan, Zainuriah

    2014-01-01

    The current-voltage characteristics of Ni contacts with the surfaces of ZnO thin films as well as single crystal (0001) ZnO substrate are investigated. The ZnO thin film shows a conversion from Ohmic to rectifying behavior when annealed at 800°C. Similar findings are also found on the Zn-polar surface of (0001) ZnO. The O-polar surface, however, only shows Ohmic behavior before and after annealing. The rectifying behavior observed on the Zn-polar and ZnO thin film surfaces is associated with the formation of nickel zinc oxide (Ni1-xZnxO, where x = 0.1, 0.2). The current-voltage characteristics suggest that a p-n junction is formed by Ni1-xZnxO (which is believed to be p-type) and ZnO (which is intrinsically n-type). The rectifying behavior for the ZnO thin film as a result of annealing suggests that its surface is Zn-terminated. Current-voltage measurements could possibly be used to determine the surface polarity of ZnO thin films. PMID:24466144

  19. Fabrication of highly transparent Al-ion-implanted ZnO thin films by metal vapor vacuum arc method

    NASA Astrophysics Data System (ADS)

    Lee, Han; Sivashanmugan, Kundan; Kao, Chi-Yuan; Liao, Jiunn-Der

    2017-03-01

    In this study, we utilized the metal vapor vacuum arc technique to implant vaporized aluminum (Al) ions in zinc oxide (ZnO) thin films. By adjusting the ion implantation dose and operational parameters, the conductivity and optical properties of the ZnO thin film can be controlled. The electrical sheet resistance of Al-ion-implanted ZnO decreased from 3.02 × 107 to 3.03 × 104 Ω/sq, while the transparency of the film was mostly preserved (91.5% at a wavelength of 550 nm). The ZnO thin-film Young’s modulus significantly increased with increasing Al ion dose.

  20. Polarity enhancement in high oriented ZnO films on Si (100) substrate

    SciTech Connect

    Kurniawan, Robi Nurfani, Eka; Muhammady, Shibghatullah; Sutjahja, Inge M.; Winata, Toto; Rusydi, Andrivo; Darma, Yudi

    2016-04-19

    Zinc oxide films with hexagonal crystal structures have been grown on Si substrate (100) using the DC-unbalanced magnetron sputtering at temperature of 300°C with growth time variation. The films have been characterized using X-Ray Diffraction and Fourier Transform Infrared measurement to show the crystal parameter and atomic bonding. The results show that the films have a dominant orientation in the hkl plane (002), while peak positions are shift to lower diffraction angle with addition of growth time. In addition, the bonding between Zn and O atoms (Zn-O) tend to be weaker as indicated by transmittance peak shifting to lower energy. The weakening of Zn-O bonding is due to the contribution of addition of bond length. These conditions make the films tend to have a high polarity. Further analysis of these studies will bring us to have a good undestanding to explain the ferroelectric properties of the ZnO films.

  1. Laser-assisted sol-gel growth and characteristics of ZnO thin films

    SciTech Connect

    Kim, Min Su; Kim, Soaram; Leem, Jae-Young

    2012-06-18

    ZnO thin films were grown on Si(100) substrates by a sol-gel method assisted by laser beam irradiation with a 325 nm He-Cd laser. In contrast to conventional sol-gel ZnO thin films, the surface morphology of the laser-assisted sol-gel thin films was much smoother, and the residual stress in the films was relaxed by laser irradiation. The luminescent properties of the films were also enhanced by laser irradiation, especially, by irradiation during the deposition and post-heat treatment stages. The incident laser beam is thought to play several roles, such as annihilating defects by accelerating crystallization during heat treatment, enhancing the surface migration of atoms and molecules, and relaxing the ZnO matrix structure during crystallization.

  2. Thermoelectric Properties of Indium and Gallium Dually Doped ZnO Thin Films.

    PubMed

    Tran Nguyen, Nhat Hong; Nguyen, Truong Huu; Liu, Yi-Ren; Aminzare, Masoud; Pham, Anh Tuan Thanh; Cho, Sunglae; Wong, Deniz P; Chen, Kuei-Hsien; Seetawan, Tosawat; Pham, Ngoc Kim; Ta, Hanh Kieu Thi; Tran, Vinh Cao; Phan, Thang Bach

    2016-12-14

    We investigated the effect of single and multidopants on the thermoelectrical properties of host ZnO films. Incorporation of the single dopant Ga in the ZnO films improved the conductivity and mobility but lowered the Seebeck coefficient. Dual Ga- and In-doped ZnO thin films show slightly decreased electrical conductivity but improved Seebeck coefficient. The variation of thermoelectric properties is discussed in terms of film crystallinity, which is subject to the dopants' radius. Small amounts of In dopants with a large radius may introduce localized regions in the host film, affecting the thermoelectric properties. Consequently, a 1.5 times increase in power factor, three times reduction in thermal conductivity, and 5-fold enhancement in the figure of merit ZT have been achieved at 110 °C. The results also indicate that the balanced control of both electron and lattice thermal conductivities through dopant selection are necessary to attain low total thermal conductivity.

  3. Polarity enhancement in high oriented ZnO films on Si (100) substrate

    NASA Astrophysics Data System (ADS)

    Kurniawan, Robi; Nurfani, Eka; Muhammady, Shibghatullah; Sutjahja, Inge M.; Winata, Toto; Rusydi, Andrivo; Darma, Yudi

    2016-04-01

    Zinc oxide films with hexagonal crystal structures have been grown on Si substrate (100) using the DC-unbalanced magnetron sputtering at temperature of 300°C with growth time variation. The films have been characterized using X-Ray Diffraction and Fourier Transform Infrared measurement to show the crystal parameter and atomic bonding. The results show that the films have a dominant orientation in the hkl plane (002), while peak positions are shift to lower diffraction angle with addition of growth time. In addition, the bonding between Zn and O atoms (Zn-O) tend to be weaker as indicated by transmittance peak shifting to lower energy. The weakening of Zn-O bonding is due to the contribution of addition of bond length. These conditions make the films tend to have a high polarity. Further analysis of these studies will bring us to have a good undestanding to explain the ferroelectric properties of the ZnO films.

  4. Morphology and Structure of ZnO Films Synthesized by Off-Axis Sputtering Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, C.-H.; Lehoczky, S. L.

    1999-01-01

    ZnO is a wide-band-gap oxide material that has many applications. A new potential application of ZnO material is for light emitting devices since its structure and electrical properties are similar to that of the GaN material (a blue laser candidate). It also is a good substrate for fabricating GaN-based devices. Off-axis sputtering technique has revealed great potential in synthesizing excellent oxide materials because the negative ion bombardment is greatly reduced when adatoms condense on substrates. The surface of films grown by off-axis sputtering will be much smoother than that produced in a regular sputtering configuration. A growth mechanism is studied by investigating the morphology and structure of ZnO films under different growth conditions and orientations. ZnO films are deposited on (0001) sapphire and quartz substrates by off- axis sputtering deposition at various oxygen/argon mixture ratios and pressures and at different temperatures. All films reveal highly textured structures on quartz substrates and epitaxial growth on sapphire substrates. Two off-axis configurations, vertical and horizontal orientations are conducted to study the process of film growth, surface morphology, and film structure. X-ray diffraction, scanning probe microscopy, and electrical measurements are used to characterize these films. Detailed results will be discussed in the presentation. Keywords: ZnO, Photonic material, Off-axis sputtering, Growth mechanism

  5. Morphology and Structure of ZnO Films Synthesized by Off-Axis Sputtering Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, C.-H.; Lehoczky, S. L.

    1999-01-01

    ZnO is a wide-band-gap oxide material that has many applications. A new potential application of ZnO material is for light emitting devices since its structure and electrical properties are similar to that of the GaN material (a blue laser candidate). It also is a good substrate for fabricating GaN-based devices. Off-axis sputtering technique has revealed great potential in synthesizing excellent oxide materials because the negative ion bombardment is greatly reduced when adatoms condense on substrates. The surface of films grown by off-axis sputtering will be much smoother than that produced in a regular sputtering configuration. A growth mechanism is studied by investigating the morphology and structure of ZnO films under different growth conditions and orientations. ZnO films are deposited on (0001) sapphire and quartz substrates by off- axis sputtering deposition at various oxygen/argon mixture ratios and pressures and at different temperatures. All films reveal highly textured structures on quartz substrates and epitaxial growth on sapphire substrates. Two off-axis configurations, vertical and horizontal orientations are conducted to study the process of film growth, surface morphology, and film structure. X-ray diffraction, scanning probe microscopy, and electrical measurements are used to characterize these films. Detailed results will be discussed in the presentation. Keywords: ZnO, Photonic material, Off-axis sputtering, Growth mechanism

  6. Gallium doping in transparent conductive ZnO thin films prepared by chemical spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Babar, A. R.; Deshamukh, P. R.; Deokate, R. J.; Haranath, D.; Bhosale, C. H.; Rajpure, K. Y.

    2008-07-01

    Zinc oxide (ZnO) and ZnO : Ga films have been deposited by the spray pyrolysis method onto preheated glass substrates using zinc acetate and gallium nitrate as precursors for Zn and Ga ions, respectively. The effect of Ga doping on the structural, morphological, optical and electrical properties of sprayed ZnO thin films were investigated using x-ray diffraction (XRD), scanning electron microscopy, optical absorption, photoluminescence (PL) and Hall effect techniques. XRD studies reveal that films are polycrystalline with hexagonal (wurtzite) crystal structure. The thin films were oriented along the (0 0 2) plane. Room temperature PL measurements indicate that the deposited films exhibit proper doping of Ga in ZnO lattice. The average transparency in the visible range was around ~85-95% for typical thin film deposited using 2 at% gallium doping. The optical band gap increased from 3.31 to 3.34 eV with Ga doping of 2 at%. The addition of gallium induces a decrease in electrical resistivity of the ZnO : Ga films up to 2 at% gallium doping. The highest figure of merit observed in this present study was 3.09 × 10-3 cm2 Ω-1.

  7. Modulation of ZnO film thickness and formation of water-hyacinth nanostructure

    NASA Astrophysics Data System (ADS)

    Gunasekaran, Ezhilarasan; Shankar, Prabakaran; Mani, Ganesh Kumar; Bosco Balaguru Rayappan, John

    2014-08-01

    The influence of precursor medium was investigated on the structural, morphological, optical and electrical properties of spray pyrolysis deposited nanostructured ZnO thin films. Three batches of ZnO thin films were deposited on glass substrates using three different solvents (water, water-ethanol [ratio of 1:1] and ethanol) based precursor solution of zinc nitrate hexahydrate. The substrate temperature was fixed at 523 K. The variation in film thickness from 150 to 875 nm was observed as the effect of changing solvent medium. X-ray diffraction (XRD) data confirmed the formation of polycrystalline ZnO thin films with hexagonal wurtzite crystallite structure and the estimated crystallite size was found to be ranging from 31 to 55 nm. Scanning electron micrographs revealed the formation of water-hyacinth shaped nanostructures when water-ethanol mixture was used as the solvent medium. Interestingly, UV-vis spectrophotometer revealed the formation of ZnO film with twin optical band gap of 3.15 eV and 3.56 eV when ethanol was used as the solvent medium. The modulation of film thickness and grain size by solvent medium has strongly influenced the electrical conductivity of ZnO thin films. The homogenous nano-spherical grains with uniform grain boundaries showed a good response towards 100 ppm of ammonia at room temperature.

  8. Photocatalytic activity and photocorrosion of atomic layer deposited ZnO ultrathin films for the degradation of methylene blue.

    PubMed

    Cao, Yan-Qiang; Chen, Jun; Zhou, Hang; Zhu, Lin; Li, Xin; Cao, Zheng-Yi; Wu, Di; Li, Ai-Dong

    2015-01-16

    ZnO ultrathin films with varied thicknesses of 7-70 nm were prepared at 200 °C on Si and fused quartz substrates by atomic layer deposition (ALD). The impact of film thickness and annealing temperature on the crystallinity, morphology, optical bandgap, and photocatalytic properties of ZnO in the degradation of methylene blue (MB) dye under UV light irradiation (λ = 365 nm) has been investigated deeply. The as-deposited 28 nm thick ZnO ultrathin film exhibits highest photocatalytic activity, ascribed to the smallest band gap of 3.21 eV and proper thickness. The photocorrosion effect of ALD ZnO ultrathin films during photocatalytic process is observed. The presence of MB significantly accelerates the dissolution of ZnO ultrathin films. The possible photoetching mechanism of ZnO in MB solution is proposed.

  9. Low temperature atomic layer deposited ZnO photo thin film transistors

    SciTech Connect

    Oruc, Feyza B.; Aygun, Levent E.; Donmez, Inci; Biyikli, Necmi; Okyay, Ali K.; Yu, Hyun Yong

    2015-01-01

    ZnO thin film transistors (TFTs) are fabricated on Si substrates using atomic layer deposition technique. The growth temperature of ZnO channel layers are selected as 80, 100, 120, 130, and 250 °C. Material characteristics of ZnO films are examined using x-ray photoelectron spectroscopy and x-ray diffraction methods. Stoichiometry analyses showed that the amount of both oxygen vacancies and interstitial zinc decrease with decreasing growth temperature. Electrical characteristics improve with decreasing growth temperature. Best results are obtained with ZnO channels deposited at 80 °C; I{sub on}/I{sub off} ratio is extracted as 7.8 × 10{sup 9} and subthreshold slope is extracted as 0.116 V/dec. Flexible ZnO TFT devices are also fabricated using films grown at 80 °C. I{sub D}–V{sub GS} characterization results showed that devices fabricated on different substrates (Si and polyethylene terephthalate) show similar electrical characteristics. Sub-bandgap photo sensing properties of ZnO based TFTs are investigated; it is shown that visible light absorption of ZnO based TFTs can be actively controlled by external gate bias.

  10. Optical properties of electrochemically deposited ZnO thin films on colloidal crystal film of SiO2 microspheres.

    PubMed

    Oh, Yong Taeg; Choi, Bum Ho; Shin, Dong Chan

    2012-02-01

    The optical properties of electrochemically deposited ZnO thin films on colloidal crystal film of SiO2 microspheres structures were studied. Colloidal crystal film of SiO2 microspheres were self-assembled by evaporation using SiO2 in solution at a constant 0.1 wt%. ZnO in thin films was then electrochemically deposited on to colloidal crystal film of SiO2 microspheres. During electrochemical deposition, the content of Zn(NO3)2 x 6H2O in solution was 5 wt%, and the process's conditions were varied between of 2-4 V and 30-120 s at room temperature, with subsequent heat-treatment between 200 and 400 degrees C. A smooth surface and uniform thickness of 1.8 microm were obtained at 3 V for 90 s. The highest PL peak intensity was obtained in the ZnO thin film heat-treated at 400 degrees C. The double layered ZnO/SiO2 colloidal crystals showed clearly better emission properties than the SiO2/ZnO and ZnO structures.

  11. N-doped ZnO films grown from hybrid target by the pulsed laser deposition technique

    NASA Astrophysics Data System (ADS)

    Martín-Tovar, E. A.; Chan y Díaz, E.; Acosta, M.; Castro-Rodríguez, R.; Iribarren, A.

    2016-10-01

    ZnO thin films were grown by the pulsed laser deposition technique on glass substrate using a hybrid target composed of ZnO powder embedded into a poly(ethyl cyanoacrylate) matrix. The resulting thin film presented ZnO wurtzite structure with very low stress and diffractogram very similar to that of the powder pattern. From comparing with ZnO thin films grown from traditional sintered target, it is suggested that the use of this hybrid target with a soft matrix led to ejection of ZnO clusters that conveniently disposed and adhered to substrate and previous deposited layers. Chemical measurements showed the presence of Zn-N bonds, besides Zn-O ones. Optical absorption profile confirmed the presence of low-polymerized zinc oxynitride molecular subunits, besides ZnO.

  12. Characterizations of multilayer ZnO thin films deposited by sol-gel spin coating technique

    NASA Astrophysics Data System (ADS)

    Khan, M. I.; Bhatti, K. A.; Qindeel, Rabia; Alonizan, Norah; Althobaiti, Hayat Saeed

    In this work, zinc oxide (ZnO) multilayer thin films are deposited on glass substrate using sol-gel spin coating technique and the effect of these multilayer films on optical, electrical and structural properties are investigated. It is observed that these multilayer films have great impact on the properties of ZnO. X-ray Diffraction (XRD) confirms that ZnO has hexagonal wurtzite structure. Scanning Electron Microscopy (SEM) showed the crack-free films which have uniformly distributed grains structures. Both micro and nano particles of ZnO are present on thin films. Four point probe measured the electrical properties showed the decreasing trend between the average resistivity and the number of layers. The optical absorption spectra measured using UV-Vis. showed the average transmittance in the visible region of all films is 80% which is good for solar spectra. The performance of the multilayer as transparent conducting material is better than the single layer of ZnO. This work provides a low cost, environment friendly and well abandoned material for solar cells applications.

  13. Optical Properties of Cu-Doped ZnO Films Prepared by Cu Solution Coating.

    PubMed

    Allabergenov, Bunyod; Chung, Seok-Hwan; Kim, Sungjin; Choi, Byeongdae

    2015-10-01

    This work demonstrates the fabrication of Cu-doped ZnO films by Cu solution coating method. Cu ink was spin coated on ZnO thin films prepared by e-beam deposition. After curing and annealing at high temperatures, structural, morphological and optical properties of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and spectrofluorometer, respectively. The XRD results showed that ZnO films formed polycrystalline with a hexagonal wurtzite structure, and the grain size increased with increasing the annealing temperature from 500 to 850 °C. The changes in lattice parameters were caused by grain size, strain, and residual stress. Morphological analysis have revealed that the Cu-doped ZnO film after annealing at 500 °C has flat surface with uniformly distributed grain size, which became porous after higher temperature annealing process. Energy dispersive spectroscopy (EDS) and photoluminescence spectras have shown the presence of Zn, Cu, and O elements, and combined violet, blue, green and weak red emissions between 350 and 650 nm in the ZnO films, respectively.

  14. Effects of Substrate Heating and Film Thickness on Properties of Silver-Based ZnO Multilayer Thin Films

    NASA Astrophysics Data System (ADS)

    Rim, You-Seung; Kim, Sang-Mo; Kim, Kyung-Hwan

    2008-06-01

    We have studied the properties of Ag/undoped ZnO (ZnO) multilayer thin films deposited on glass substrates by facing target sputtering. In an attempt to determine the optimum conditions of the Ag thin film, which would be coated on the ZnO thin film, we investigated the changes in sheet resistance, transmittance, and surface morphology as functions of varying deposition time and substrate temperature. The electrical and optical characteristics of Ag/ZnO multilayers were evaluated using a four-point probe, and a UV/visible (vis) spectrometer with a spectral range of 390-770 nm, an X-ray diffractometer (XRD), atomic force microscopy (AFM), and a field emission scanning electron microscopy (SEM). We prepared the Ag/ZnO multilayer thin film with a sheet resistance of 7.53 Ω/sq. and a transmittance of more than 80% at 550 nm.

  15. Influence of C or In buffer layer on photoluminescence behaviour of ultrathin ZnO film

    SciTech Connect

    Saravanan, K. Jayalakshmi, G.; Krishnan, R.; Sundaravel, B.; Panigrahi, B. K.

    2016-09-07

    We study the effect of the indium or carbon buffer layer on the photoluminescence (PL) property of ZnO ultrathin films deposited on a Si(100) substrate. The surface morphology of the films obtained using scanning tunnelling microscopy shows spherical shaped ZnO nanoparticles of size ∼8 nm in ZnO/C/Si and ∼22 nm in ZnO/Si samples, while the ZnO/In/Si sample shows elliptical shaped ZnO particles. Further, the ZnO/C/Si sample shows densely packed ZnO nanoparticles in comparison with other samples. Strong band edge emission has been observed in the presence of In or C buffer layer, whereas the ZnO/Si sample exhibits poor PL emission. The influence of C and In buffer layers on the PL behaviour of ZnO films is studied in detail using temperature dependent PL measurements in the range of 4 K–300 K. The ZnO/C/Si sample exhibits a multi-fold enhancement in the PL emission intensity with well-resolved free and bound exciton emission lines. Our experimental results imply that the ZnO films deposited on the C buffer layer showed higher particle density and better exciton emission desired for optoelectronic applications.

  16. Characterization of ZnO films prepared by sol-gel method

    NASA Astrophysics Data System (ADS)

    Zhang, Jide; Sun, Xin; Qi, Tong; Ren, Ge; Shan, Yingyu; Dong, Qingya

    2017-03-01

    The ZnO thin films were prepared on an ordinary glass substrate using an optimized Sol-gel Method. X-ray diffraction patterns indicated that the grain size increased with increasing annealing temperature. The surface morphology of the films was also analyzed by atomic force microscopy get the same result. The UV-Vis absorption spectra showed that the band edge absorption at the ZnO band edge was strong, and the band gap of the film annealed at 450 °C was 3.29eV.

  17. A template-free CVD route to synthesize hierarchical porous ZnO films

    NASA Astrophysics Data System (ADS)

    Duan, Xiangyang; Chen, Guangde; Guo, Lu'an; Zhu, Youzhang; Ye, Honggang; Wu, Yelong

    2015-12-01

    Unique porous ZnO films were successfully synthesized on Si substrates without any catalysts or templates using chemical vapor deposition method. Unlike earlier reports, they are hierarchical porous, containing both macropores and mesopores. The zinc oxide seed layer and the weight ratio of source materials were found to be the major factors that would facilitate the synthesis of these hierarchical porous films. We found that all the macropores were surrounded by grain boundaries. As presented in the SEM images, the newborn ZnO atoms would prefer to adsorb nearby the grain boundaries and nucleate there in the growth stage. A schematic diagram based on the aforesaid phenomenon was proposed to explain the synthesis of the hierarchical porous ZnO film. An unusual strong emission peak located at 420 nm was observed in the photoluminescence spectrum. It was suggested that the emission peak was attributed to the special hierarchical porous structure, especially the grain boundaries in the nanowalls of these films.

  18. Optical Properties of MEH-PPV Thin Films Containing ZnO Nanoparticles

    SciTech Connect

    Zayana, N. Y.; Shariffudin, S. S.; Jumali, N. S.; Shaameri, Z.; Hamzah, A. S.; Rusop, M.

    2011-05-25

    Thin films of poly [2-methoxy-5(2'-ethyl hexyloxy)-phenylene vinylene](MEH-PPV) containing different weight percent of ZnO nanoparticles were deposited by spin coating from THF solutions and their optical properties were investigated. Optical characterization of the nanocomposite thin films were performed by Ultraviolet-Visible Spectrophotometer (UV-Vis) and Photoluminescence Spectrometer while the thickness of the thin films was measured by using Surface Profiler. The UV-Vis absorption spectra of MEH-PPV: ZnO films showed a small red shift as compared with pure MEH-PPV. Similarly, a small red shift was found in PL emission spectra with increasing the content of ZnO nanoparticles.

  19. Synthesis and Characterization of Molybdenum Doped ZnO Thin Films by SILAR Deposition Method

    NASA Astrophysics Data System (ADS)

    Radha, R.; Sakthivelu, A.; Pradhabhan, D.

    2016-08-01

    Molybdenum (Mo) doped zinc oxide (ZnO) thin films were deposited on the glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) deposition method. The effect of Mo dopant concentration of 5, 6.6 and 10 mol% on the structural, morphological, optical and electrical properties of n-type Mo doped ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the Mo doped ZnO thin films were polycrystalline with wurtzite structure. The field emission scanning electron microscopy (FESEM) studies shows that the surface morphology of the films changes with Mo doping. A blue shift of the optical band gap was observed in the optical studies. Effect of Mo dopant concentration on electrical conductivity was studied and it shows comparatively high electrical conductivity at 10 mol% of Mo doping concentration.

  20. Role of Ni doping on transport properties of ZnO thin films

    SciTech Connect

    Dar, Tanveer Ahmad Agrawal, Arpana; Sen, Pratima

    2015-06-24

    Nickel doped (Ni=0.05) and undoped Zinc Oxide (ZnO) thin films have been prepared by Pulsed laser deposition (PLD) technique. The structural analysis of the films was done by X-ray diffraction (XRD) studies which reveal absence of any secondary phase in the prepared samples. UV transmission spectra show that Ni doping reduces the transparency of the films. X-ray Photoelectron spectroscopy (XPS) also shows the presence of metallic Ni along with +2 oxidation state in the sample. Low temperature magneto transport properties of the ZnO and NiZnO films are also discussed in view of Khosla fisher model. Ni doping in ZnO results in decrease in magnitude of negative MR.

  1. Mechanical and structural characterization of atomic layer deposition-based ZnO films

    NASA Astrophysics Data System (ADS)

    Tapily, K.; Gu, D.; Baumgart, H.; Namkoong, G.; Stegall, D.; Elmustafa, A. A.

    2011-11-01

    Zinc oxide thin films were deposited by atomic layer deposition (ALD). The structural and mechanical properties of the thin films were investigated by x-ray diffraction, transmission electron microscopy, atomic force microscopy, and nanoindentation. Diethyl zinc was used as the chemical precursor for zinc and water vapor was used as the oxidation agent. The samples were deposited at 150 °C and at a pressure of 2.1 × 10-1 Torr in the ALD reactor. A growth rate of 2 Å per cycle was calculated in the ALD process window. The Nano Indenter XP was used in conjunction with the continuous stiffness method in depth control mode in order to measure and to analyze the mechanical properties of hardness and modulus of ALD ZnO thin film samples. For comparison, we benchmarked the mechanical properties of single crystal bulk ZnO samples against those of our ALD ZnO thin films.

  2. Properties and characterization of bionanocomposite films prepared with various biopolymers and ZnO nanoparticles.

    PubMed

    Kanmani, Paulraj; Rhim, Jong-Whan

    2014-06-15

    This study was aimed to develop biopolymer based antimicrobial films for active food packaging and to reduce environmental pollution caused by accumulation of synthetic packaging. The ZnO NPs were incorporated as antimicrobials into different biopolymers such as agar, carrageenan and CMC. Solvent casting method was performed to prepare active nanocomposite films. Methods such as FE-SEM, FT-IR and XRD were used to characterize resulting films. Physical, mechanical, thermal and antimicrobial properties were also examined. Remarkable surface morphological differences were observed between control and nanocomposite films. The crystallinity of ZnO was confirmed by XRD analysis. The addition of ZnO NPs increased color, UV barrier, moisture content, hydrophobicity, elongation and thermal stability of the films, while decreased WVP, tensile strength and elastic modulus. ZnO NPs impregnated films inhibited growth of L. monocytogenes and E. coli. So these newly prepared nanocomposite films can be used as active packaging film to extend shelf-life of food. Copyright © 2014 Elsevier Ltd. All rights reserved.

  3. Highly transparent and luminescent nanostructured EU2O3 doped ZnO films

    NASA Astrophysics Data System (ADS)

    Sreeja Sreedharan, R.; Ganasan, V.; Sudarsanakumar, C.; Prabhu, Radhakrishna; Mahadevan Pillai, V. P.

    2014-08-01

    Zinc oxide is a wide, direct band gap II-VI oxide semiconductor. Pure and Eu-doped ZnO films are prepared by RF Magnetron sputtering at different doping concentrations (0.5, 1, 3 and 5 wt %). The films are annealed at 500 0C in air for two hours. The structural, morphological and optical properties of the films are characterized using XRD, micro-Raman, AFM, UV-Visible and photoluminescence spectroscopy. The thickness of the films is measured using stylus profilometer. XRD analysis shows that all the films are highly c-axis oriented exhibiting a single peak corresponding to (002) lattice reflection plane of hexagonal wurtzite crystal phase of ZnO. The micro-Raman spectra analysis reveals the presence of E2 high mode in all the samples which is the intrinsic characteristic of hexagonal wurtzite structure of ZnO. The appearance of LO modes indicates the formation of defects such as oxygen vacancies in the films. AFM micrographs show uniform distribution of densely packed grains of size with well defined grain boundaries. All the films exhibit very high transmittance (above 80%) in the visible region with a sharp fundamental absorption edge around 380 nm corresponding to the intrinsic band edge of ZnO. All the films show PL emission in the UV and visible region.

  4. Effect of N2 flow during deposition on p-type ZnO film

    NASA Astrophysics Data System (ADS)

    Lin, Chiung-Wei; Liu, Bor-Chang

    2017-01-01

    In this study, the influence of a nitrogen source on p-type conductive ZnO films was studied. Rapid thermal oxidation was conducted to oxidize ZnN films and convert them to ZnO films. When an as-deposited ZnN film was prepared at a high nitrogen gas flow rate, the converted ZnO film possessed many acceptors and showed stable p-type conduction. This p-type conduction was attributed to the nitrogen gas flow providing many “No” states, which act as acceptors within the processed ZnO film. It was found that the as-deposited ZnN film prepared at a high nitrogen gas flow rate is oxidized slightly so that only a few nitrogen atoms were replaced by oxygen. The carrier concentration and mobility of the optimized oxidized ZnN film were 9.76 × 1017 cm-3 and 62.78 cm2 V-1 s-1, respectively. A good rectified current-voltage characteristic with a turn-on voltage of 3.65 V was achieved for the optimized ZnO:N/ZnO junction.

  5. The enhancement of oxygen sensitivity of ZnO macropore film by functionalizing with azo pigment.

    PubMed

    Peng, Liang; Zhai, Jiali; Wang, Dejun; Zhang, Yu; Zhao, Qidong; Wang, Ping; Pang, Shan; Fan, Zhiyong; Xie, Tengfeng

    2009-06-01

    Azo-ZnO hybrid films were prepared by functionalizing the ZnO macropore films with azo pigment (1,1'-(biphenyl-4,4'-diylbis(diazene-2,1-diyl))dinaphthalen-2-ol). Scanning electronic microscopy, current-voltage, UV-Vis absorption spectroscopy and Kelvin probe were used to characterize these films. The oxygen sensing characteristics of hybrid films and pure ZnO film were measured under the irradiation of UV light. The results show that the sensitivity of hybrid film is about 500 times higher than that of pure ZnO film. The high sensitivity to oxygen of hybrid films is mainly attributed to the increasing of the photo-generated electron concentration. Enhanced photo-induced charge separation after functionalization is confirmed by the pattern of transient photovoltage. Our results demonstrate that the functionalization with azo pigment is a promising approach to enhance the oxygen sensitivity of ZnO under the irradiation of UV light.

  6. Optical and photoelectrical properties of nanostructured thin ZnO films for UV-sensors

    NASA Astrophysics Data System (ADS)

    Grigoryev, L. V.; Kulakov, S. V.; Nefedov, V. G.; Shakin, O. V.; Grigoryeva, M. L.; Moskalenko, S. D.

    2017-05-01

    The article presents the results investigations of the optical and photoelectric properties thin films zinc oxide obtained by the reactive ion-plasma method. It is shown that the optical and photoelectric properties of thin ZnO films has equivalent characteristics to the properties of single crystal zinc oxide and can be used to create UV-photoresistors.

  7. Large lateral photovoltaic effect observed in nano Al-doped ZnO films.

    PubMed

    Lu, Jing; Wang, Hui

    2011-07-18

    Zinc oxide (ZnO), including a variety of metal-doped ZnO, as one kind of most important photoelectric materials, has been widely investigated and received enormous attention for a series of applications. In this work, we report a new finding which we call as lateral photovoltaic effect (LPE) in a nano Al-doped ZnO (ZAO) film based on ZAO/SiO2/Si homo-heterostructure. This large and stable LPE observed in ZAO is an important supplement to the existing ZnO properties. In addition, all data and analyses demonstrate ZAO film can also be a good candidate for new type position-sensitive detector (PSD) devices.

  8. Effects of annealing temperature on ZnO and AZO films prepared by sol-gel technique

    NASA Astrophysics Data System (ADS)

    Ng, Zi-Neng; Chan, Kah-Yoong; Tohsophon, Thanaporn

    2012-10-01

    Zinc oxide (ZnO) films have the potential in the emerging thin-film technologies which can be employed in thin-film solar cells, transistors, sensors and other optoelectronic devices. In this work, low cost sol-gel spin-coating technique was used to synthesize the ZnO films. The influences of annealing temperature on the structural and optical properties of ZnO and aluminum doped ZnO (AZO) films were investigated. The structural properties of the ZnO films such as surface morphology and crystallinity were determined using atomic force microscopy (AFM) and X-ray diffractometry (XRD), respectively. The optical properties of the ZnO films were characterized by the ultraviolet-visible (UV-vis) spectroscopy and Tauc method was adopted to estimate the optical gap. The experimental results reveal that the thermal annealing treatment affects the properties of the ZnO films. The effects of the low range annealing temperature on the sol-gel ZnO films addressed in this investigation will be discussed in this paper.

  9. Controlling growth rate anisotropy for formation of continuous ZnO thin films from seeded substrates.

    PubMed

    Zhang, R H; Slamovich, E B; Handwerker, C A

    2013-05-17

    Solution-processed zinc oxide (ZnO) thin films are promising candidates for low-temperature-processable active layers in transparent thin film electronics. In this study, control of growth rate anisotropy using ZnO nanoparticle seeds, capping ions, and pH adjustment leads to a low-temperature (90 ° C) hydrothermal process for transparent and high-density ZnO thin films. The common 1D ZnO nanorod array was grown into a 2D continuous polycrystalline film using a short-time pure solution method. Growth rate anisotropy of ZnO crystals and the film morphology were tuned by varying the chloride (Cl(-)) ion concentration and the initial pH of solutions of zinc nitrate and hexamethylenetetramine (HMTA), and the competitive adsorption effects of Cl(-) ions and HMTA ligands on the anisotropic growth behavior of ZnO crystals were proposed. The lateral growth of nanorods constituting the film was promoted by lowering the solution pH to accelerate the hydrolysis of HMTA, thereby allowing the adsorption effects from Cl(-) to dominate. By optimizing the growth conditions, a dense ∼100 nm thickness film was fabricated in 15 min from a solution of [Cl(-)]/[Zn(2+)] = 1.5 and pH=  4.8 ± 0.1. This film shows >80% optical transmittance and a field-effect mobility of 2.730 cm(2) V(-1) s(-1) at zero back-gate bias.

  10. Mn2+ ions distribution in doped sol-gel deposited ZnO films

    NASA Astrophysics Data System (ADS)

    Stefan, Mariana; Ghica, Daniela; Nistor, Sergiu V.; Maraloiu, Adrian V.; Plugaru, Rodica

    2017-02-01

    The localization and distribution of the Mn2+ ions in two sol-gel deposited ZnO films doped with different manganese concentrations were investigated by electron paramagnetic resonance spectroscopy and analytical transmission electron microscopy. In the lightly doped sample the Mn2+ ions are mainly localized substitutionally at isolated tetrahedrally coordinated Zn2+ sites in both crystalline ZnO nanograins (34%) and surrounding disordered ZnO (52%). In the highly doped ZnO film, a much smaller proportion of manganese substitutes Zn2+ in the crystalline and disordered ZnO (10%). The main amount (85%) of manganese aggregates in a secondary phase as an insular-like distribution between the ZnO nanograins. The remaining Mn2+ ions (14% and 5% at low and high doping levels, respectively) are localized at isolated, six-fold coordinated sites, very likely in the disordered intergrain region. Annealing at 600 °C induced changes in the Mn2+ ions distribution, reflecting the increase of the ZnO crystallization degree, better observed in the lightly doped sample.

  11. Growth of Polarity-Controlled ZnO Films on (0001) Al2O3

    NASA Astrophysics Data System (ADS)

    Park, J. S.; Chang, J. H.; Minegishi, T.; Lee, H. J.; Park, S. H.; Im, I. H.; Hanada, T.; Hong, S. K.; Cho, M. W.; Yao, T.

    2008-05-01

    The polarity control of ZnO films grown on (0001) Al2O3 substrates by plasma-assisted molecular-beam epitaxy (P-MBE) was achieved by using a novel CrN buffer layer. Zn-polar ZnO films were obtained by using a Zn-terminated CrN buffer layer, while O-polar ZnO films were achieved by using a Cr2O3 layer formed by O-plasma exposure of a CrN layer. The mechanism of polarity control was proposed. Optical and structural quality of ZnO films was characterized by high-resolution X-ray diffraction and photoluminescence (PL) spectroscopy. Low-temperature PL spectra of Zn-polar and O-polar samples show dominant bound exciton (I8) and strong free exciton emissions. Finally, one-dimensional periodic structures consisting of Zn-polar and O-polar ZnO films were simultaneously grown on the same substrate. The periodic inversion of polarity was confirmed in terms of growth rate, surface morphology, and piezo response microscopy (PRM) measurement.

  12. Annealing effect on the property of ultraviolet and green emissions of ZnO thin films

    NASA Astrophysics Data System (ADS)

    Kang, Hong Seong; Kang, Jeong Seok; Kim, Jae Won; Lee, Sang Yeol

    2004-02-01

    The mechanism of ultraviolet (UV) and green emission of ZnO thin films deposited on (001) sapphire substrates by pulsed laser deposition was investigated by using postannealing treatment at various annealing temperatures after deposition. Structural, electrical, and optical properties of ZnO films have been also observed. As the postannealing temperature increased, the intensity of UV (380 nm) peak and the carrier concentration were decreased while the intensity of the visible (about 490-530 nm) peak and the resistivity were increased. The role of oxygen in ZnO thin film during the annealing process was important to the change of optical properties. The mechanism of the luminescence suggested that UV luminescence of ZnO thin film was related to the transition from near band edge to valence band, and green luminescence of ZnO thin film was caused by the transition from deep donor level to valence band due to oxygen vacancies. The activation energy derived by using the variation of green emission intensity was 1.19 eV.

  13. Influence of Substrate Nature and Annealing on Electro-Optical Properties of ZnO Thin Films

    SciTech Connect

    Iacomi, Felicia; Baban, C.; Prepelita, Petronela; Luca, D.; Iftimie, Nicoleta

    2007-04-23

    ZnO thin films were grown on different substrates (glass, quartz, silicon wafers, etc) by vacuum thermal evaporation. Different thermal treatments were performed in order to obtain transparent and conductive or high resistive ZnO thin films. The optical and electrical properties of ZnO thin films are dependent on the crucible temperature, annealing conditions and on the substrate nature. The thin films are transparent and have an electrical resistivity in 10-4 {omega}m regio. The annealing process performed in vacuum at 573K or under UV irradiation determines a decrease in the electrical resistivity of films.

  14. Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Karakaya, Seniye; Ozbas, Omer

    2015-02-01

    ZnO is an II-VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO2) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200-1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and electrodes in solar cells.

  15. Using the hydrothermal method to grow p-type ZnO nanowires on Al-doped ZnO thin film to fabricate a homojunction diode.

    PubMed

    Tseng, Yung-Kuan; Hung, Meng-Chun; Su, Shun-Lung; Li, Sheng-Kai

    2014-10-01

    In this study, the hydrothermal method is used to grow phosphorus-doped ZnO nanowires on Si/SiO2 substrates deposited with Al-doped ZnO thin film. This structure forms a homogeneous p-n junction. In this study, we are the pioneers to use ammonium hypophosphite (NH4H2PO2) as a source of phosphorus to prepare the precursor solution. Ammonium hypophosphite of different concentration levels is used to observe its effects on the growth of nanowires. The results show that the precursor solution prepared from ammonium hypophosphite can produce good crystalline ZnO nanowires while there is no linear relationship between the amounts and concentration levels of phosphorus doped into the nanowires. Whether the phosphorus-doped ZnO nanowires have the characteristics of a p-type semiconductor is indirectly verified by measuring whether the p-n junction made up of Al-doped ZnO thin film and phosphorus-doped ZnO nanowires shows rectifying behavior. I-V measurements are made on the specimens. The results show good rectifying behavior, proving that the phosphorus-doped ZnO nanowires and Al-doped AZO films have p-type and n-type semiconductor properties, constituting a good p-n junction. This result also proves that ammonium hypophosphite is a better source of phosphorus in the hydrothermal method to synthesize phosphorus-doped ZnO nanowires.

  16. Characterization of ZnO Thin Films Prepared by Thermal Oxidation of Zn

    NASA Astrophysics Data System (ADS)

    Bouanane, I.; Kabir, A.; Boulainine, D.; Zerkout, S.; Schmerber, G.; Boudjema, B.

    2016-07-01

    Zinc oxide thin films were prepared by thermal oxidation of zinc films at a temperature of 500°C for 2 h. The Zn films were deposited onto glass substrates by magnetron RF sputtering. The sputtering time varied from 2.5 min to 15 min. The physico-chemical characterization of the ZnO films was carried out depending on the Zn sputtering time. According to x-ray diffraction, ZnO films were polycrystalline and the Zn-ZnO phase transformation was direct. The mean transmittance of the ZnO films was around 80% and the band gap increased from 3.15 eV to 3.35 eV. Photoluminescence spectra show ultraviolet, visible, and infrared emission bands. The increase of the UV emission band was correlated with the improvement of the crystalline quality of the ZnO films. The concentration of native defects was found to decrease with increasing Zn sputtering time. The decrease of the electrical resistivity as a function of Zn sputtering time was linked to extrinsic hydrogen-related defects.

  17. Intrinsic and extrinsic origins of room temperature ferromagnetism in Ni-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Liu, X. J.; Zhu, X. Y.; Song, C.; Zeng, F.; Pan, F.

    2009-02-01

    The structural, electrical and magnetic properties of Ni-doped ZnO films with different Ni concentrations (x = 0-0.11, x: Ni concentration) and thicknesses (d = 15-330 nm, d: film thickness) prepared by radio-frequency magnetron sputtering have been systematically investigated. The structural characterizations indicate that Ni ions in the 2+ valence state, uniformly distributed in the film, almost substitute for the Zn ions when x <= 0.07, whereas when x increases up to 0.11, a second phase Ni is formed. Room temperature (RT) ferromagnetism (FM) has been observed for all the Ni-doped ZnO wurtzite films. The saturated magnetization varies drastically with the Ni concentration and the film thickness. A large magnetic moment of 2.80 μB/Ni is obtained in the 15 nm thick Zn0.96Ni0.04O film at RT. The results show that the FM observed is intrinsic for Ni-doped ZnO films and can be explained in terms of the bound magnetic polaron mechanism based on the presence of defects. In addition, the Ni precipitates owing to the excessive doping of Ni in ZnO, as an extrinsic origin, also contribute to the ferromagnetic properties in highly doped samples.

  18. Piezoelectricity of ZnO Films Prepared by Sol-Gel Method

    NASA Astrophysics Data System (ADS)

    Zhang, Ke-ming; Zhao, Ya-pu; He, Fa-quan; Liu, Dong-qing

    2007-12-01

    ZnO piezoelectric thin films were prepared on crystal substrate Si(111) by sol-gel technology, then characterized by scanning electron microscopy, X-ray diffraction and atomic force microscopy (AFM). The ZnO films characterized by X-ray diffraction are highly oriented in (002) direction with the growing of the film thickness. The morphologies, roughness and grain size of ZnO film investigated by AFM show that roughness and grain size of ZnO piezoelectric films decrease with the increase of the film thickness. The roughness dimension is 2.188-0.914 nm. The piezoelectric coefficient d33 was investigated with a piezo-response force microscope (PFM). The results show that the piezoelectric coefficient increases with the increase of thickness and (002) orientation. When the force reference is close to surface roughness of the films, the piezoelectric coefficient measured is inaccurate and fluctuates in a large range, but when the force reference is big, the piezoelectric coefficient d33 changes little and ultimately keeps constant at a low frequency.

  19. Electrical and optical properties of Ti doped ZnO films grown on glass substrate by atomic layer deposition

    SciTech Connect

    Wan, Zhixin; Kwack, Won-Sub; Lee, Woo-Jae; Jang, Seung-II; Kim, Hye-Ri; Kim, Jin-Woong; Jung, Kang-Won; Min, Won-Ja; Yu, Kyu-Sang; Park, Sung-Hun; Yun, Eun-Young; Kim, Jin-Hyock; Kwon, Se-Hun

    2014-09-15

    Highlights: • Ti doped ZnO films were prepared on Corning XG glass substrate by ALD. • The electrical properties and optical properties were systematically investigated. • An optimized Ti doped ZnO films had low resistivity and excellent optical transmittance. - Abstract: Titanium doped zinc oxide (Ti doped ZnO) films were prepared by atomic layer deposition methods at a deposition temperature of 200 °C. The Ti content in Ti doped ZnO films was varied from 5.08 at.% to 15.02 at.%. X-ray diffraction results indicated that the crystallinity of the Ti doped ZnO films had degraded with increasing Ti content. Transmission electron microscopy was used to investigate the microstructural evolution of the Ti doped ZnO films, showing that both the grain size and crystallinity reduced with increasing Ti content. The electrical resistivity of the Ti doped ZnO films showed a minimum value of 1.6 × 10{sup −3} Ω cm with the Ti content of 6.20 at.%. Furthermore, the Ti doped ZnO films exhibited excellent transmittance.

  20. Current mapping of nonpolar a-plane and polar c-plane GaN films by conductive atomic force microscopy

    NASA Astrophysics Data System (ADS)

    Xu, Shengrui; Jiang, Teng; Lin, Zhiyu; Zhao, Ying; Yang, Linan; Zhang, Jincheng; Li, Peixian; Hao, Yue

    2016-10-01

    Nonpolar (11-20) a-plane GaN and polar (0001) c-plane GaN films have been grown by metal organic chemical vapor deposition on r-plane (1-102) and c-plane (0001) sapphire substrates, respectively. Conductive atomic force microscopy (C-AFM) has been used to investigate the local conductivity of the films. C-AFM shows enhanced current conduction within the etch pits of c-plane GaN and triangular pits of a-plane GaN. The results indicate that the off-axis planes are more electrically active than c-plane and a-plane. Surprisingly, the C-AFM values in triangular pit of the a-plane GaN are much smaller than that in etch pits of the c-plane GaN. The dislocations type related current leakage mechanism is revealed for polar c-plane and nonpolar a-plane GaN films.

  1. Optoelectronic characteristics of YAG phosphor-incorporated ZnO films deposited by ultrasonic spray pyrolysis

    PubMed Central

    2012-01-01

    This work presents a novel white light device. An yttrium aluminum garnet (YAG) phosphor-incorporated zinc oxide (ZnO) film is deposited on a slide glass substrate by ultrasonic spray pyrolysis. A nanoflower consisting of a hexagonal nanopetal is formed on the surfaces of the samples, and the sizes of the nanopetal are approximately 200 to 700 nm. Additionally, the nanopetal becomes blunted with an increasing incorporated amount of YAG. As the incorporated amount is 1.5 and 2.5 wt.%, the photoluminescence color of the YAG-incorporated ZnO film is nearly white, possibly contributing to the YAG emission and the band-to-deep level transition in the ZnO film. PMID:23151219

  2. Third generation biosensing matrix based on Fe-implanted ZnO thin film

    SciTech Connect

    Saha, Shibu; Gupta, Vinay; Sreenivas, K.; Tan, H. H.; Jagadish, C.

    2010-09-27

    Third generation biosensor based on Fe-implanted ZnO (Fe-ZnO) thin film has been demonstrated. Implantation of Fe in rf-sputtered ZnO thin film introduces redox center along with shallow donor level and thereby enhance its electron transfer property. Glucose oxidase (GOx), chosen as model enzyme, has been immobilized on the surface of the matrix. Cyclic voltammetry and photometric assay show that the prepared bioelectrode, GOx/Fe-ZnO/ITO/Glass is sensitive to the glucose concentration with enhanced response of 0.326 {mu}A mM{sup -1} cm{sup -2} and low Km of 2.76 mM. The results show promising application of Fe-implanted ZnO thin film as an attractive matrix for third generation biosensing.

  3. Photoluminescence lifetime of Al-doped ZnO films in visible region

    NASA Astrophysics Data System (ADS)

    Sharma, Bhupendra K.; Khare, Neeraj; Haranath, D.

    2010-12-01

    ZnO and Al-doped ZnO films have been deposited on quartz substrates by ultrasonically assisted chemical vapor deposition technique. Photoluminescence (PL) spectra of the films reveal that Al doping leads to suppression of defect related visible band. Time resolved photoluminescence studies have been carried out for the measurement of lifetime of deep level luminescence. The decay of PL intensity with time has been found to follow biexponential behavior. The relative contributions of fast decay component (τ1) and slow decay component (τ2) in total decay process are found to be ˜99% and ˜1% respectively. The values of τ1 and τ2 are found to decrease with Al doping in ZnO film. The decrease of both τ1 and τ2 is attributed to increase in non-radiative recombination due to reduction in grain sizes and the decrease in radiative recombination due to suppression of defects.

  4. Functionalization of nanostructured ZnO films by copper-free click reaction.

    PubMed

    Cao, Yan; Galoppini, Elena; Reyes, Pavel Ivanoff; Lu, Yicheng

    2013-06-25

    The copper-free click reaction was explored as a surface functionalization methodology for ZnO nanorod films grown by metal organic chemical vapor deposition (MOCVD). 11-Azidodecanoic acid was bound to ZnO nanorod films through the carboxylic acid moiety, leaving the azide group available for Cu-free click reaction with alkynes. The azide-functionalized layer was reacted with 1-ethynylpyrene, a fluorescent probe, and with alkynated biotin, a small biomolecule. The immobilization of pyrene on the surface was probed by fluorescence spectroscopy, and the immobilization of biotin was confirmed by binding with streptavidin-fluorescein isothiocyanate (streptavidin-FITC). The functionalized ZnO films were characterized by Fourier transform infrared attenuated total reflectance (FTIR-ATR), steady-state fluorescence emission, fluorescence microscopy, and field emission scanning electron microscopy (FESEM).

  5. Pulsed laser deposition of piezoelectric ZnO thin films for bulk acoustic wave devices

    NASA Astrophysics Data System (ADS)

    Serhane, Rafik; Abdelli-Messaci, Samira; Lafane, Slimane; Khales, Hammouche; Aouimeur, Walid; Hassein-Bey, Abdelkadder; Boutkedjirt, Tarek

    2014-01-01

    Piezoelectric properties of ZnO thin films have been investigated for micro-electro-mechanical systems (MEMS). Wurtzite ZnO structure was prepared on different substrates (Si (1 0 0), Pt (1 1 1)/Ti/SiO2/Si and Al (1 1 1)/SiO2/Si) at different substrate temperatures (from 100 to 500 °C) by a pulsed laser deposition (PLD) technique. X-ray diffraction (XRD) characterization showed that the ZnO films were highly c-axis (0 0 2) oriented, which is of interest for various piezoelectric applications. Scanning electron microscopy (SEM) showed evidence of honeycomb-like structure on the surface and columnar structure on the cross-section. In the case of ZnO on Al, ZnO exhibited an amorphous phase at the ZnO/Al interface. The XRD measurements indicated that the substrate temperature of 300 °C was the optimum condition to obtain high quality (strongest (0 0 2) peak with the biggest associated grain size) of crystalline ZnO on Pt and on Al and that 400 °C was the optimum one on Si. ZnO on Al exhibits smallest rocking curve width than on Pt, leading to better crystalline quality. The ZnO films were used in bulk acoustic wave (BAW) transducer. Electrical measurements of the input impedance and S-Parameters showed evidence of piezoelectric response. The electromechanical coupling coefficient was evaluated as Keff2    =    5 .0 9 %, with a quality factor Qr = 1001.4.

  6. Laser ablated ZnO thin film for amperometric detection of urea

    NASA Astrophysics Data System (ADS)

    Batra, Neha; Tomar, Monika; Jain, Prateek; Gupta, Vinay

    2013-09-01

    Zinc oxide (ZnO) thin films deposited onto indium tin oxide (ITO) coated corning glass substrates using pulsed laser deposition (PLD) technique at two different oxygen pressures (50 mT and 100 mT) have been used as efficient matrix for realization of efficient urea biosensors after immobilization of urease (Urs) enzyme onto ZnO film surface. The bioelectrode Urs/ZnO/ITO/glass having ZnO matrix grown at 100 mT is found to be exhibiting an enhanced sensitivity of 36 μΑ mΜ-1 cm-2 for urea over a wide detection range of 5-200 mg/dl. The relatively low value of Michaelis-Menten constant (Km = 0.82 mM) indicates high affinity of the immobilized urease towards the analyte (urea). The prepared sensor exhibits high selectivity towards detection of urea and retains 90% of its activity for more than 12 weeks. The observed enhanced response characteristics of bioelectrode is attributed to the growth of highly c-axis oriented ZnO thin film by PLD at 100 mT oxygen pressure with desired rough and porous surface morphology besides high electron communication feature. The results confirm the promising application of PLD grown ZnO thin film as an efficient matrix for urea detection.

  7. Electrochemically deposited nanostructured ZnO thin films for biosensor applications

    NASA Astrophysics Data System (ADS)

    Bhadane, Hemalata; Samuel, Edmund; Gautam, D. K.

    2014-04-01

    Zinc Oxide thin films have been deposited by electrochemical method on stainless steel using Zinc nitrate hexahydrate as precursor and 0.05 M potassium chloride (KCl) as supporting electrolyte. The paper reveals thorough investigation of effect of concentration of Zinc nitrate. Further, morphological, structural and optical analysis has been carried out using the FESEM, XRD and PL spectroscopy respectively. From FESEM hexagonal shape nanorods ZnO films fabricated for 1 hour using 0.05M and 0.1M concentration are clearly observed. The XRD of ZnO thin films shows strong peaks along c-axis with (0 0 2) orientation of ZnO nanorods which implies deposited nanorods are perpendicular to the substrate surface and wurtzite hexagonal phase. The hexagonal ZnO nanorod grown using a 0.05M zinc nitrate concentration exhibited the sharpest and most intense PL peak in at 382 nm near UV band edge, indicates the enhanced crystalline structure of ZnO film.

  8. Structural, Electrical, and Optical Properties of ZnO Film Used as Buffer Layer for CIGS Thin-Film Solar Cell.

    PubMed

    Choi, Eun Chang; Cha, Ji-Hyun; Jung, Duk-Young; Hong, Byungyou

    2016-05-01

    The CuIn(x)Ga(1-x)Se2 (CIGS) using the solution-based fabrication method is attractive for thin film solar cells because of its possibilities for large-area and low-cost production. ZnO films between transparent conductive oxide (TCO) and the CdS films can improve the performances of CIGS thin-film solar cells. In this study, we investigated the characteristics of ZnO film between TCO and CIGS layers in a solar cell (AZO/ZnO/CdS/CIGS/Mo), which were deposited at various thicknesses to investigate the role of the films in CIGS solar cells. It was confirmed that the conversion efficiency of a CIGS solar cell depends on the ZnO film. For a ZnO film thickness of 80 nm, the highest power conversion efficiency that a solar cell achieved was J(sc) of 18.73 mA/cm2.

  9. Construction of (001) facets exposed ZnO nanosheets on magnetically driven cilia film for highly active photocatalysis

    NASA Astrophysics Data System (ADS)

    Peng, Fengping; Zhou, Qiang; Lu, Chunhua; Ni, Yaru; Kou, Jiahui; Xu, Zhongzi

    2017-02-01

    ZnO nanosheet arrays with exposed (001) facets have been constructed onto a biomimetic inner-motile film, using a seed-mediated hydrothermal growth technology without adding capping agents. The growth of ZnO nanoparticles along the [001] direction is impeded because of a physical steric hindrance, and therefore (001) planes are left behind as the dominant crystal facets. In comparison to ZnO nanorod arrays film, the photocatalytic activity of the actuated (001) facets exposed ZnO nanosheet arrays film is dramatically improved to approximately 2.48 times. Moreover, when it is subjected to a rotational magnetic field, the ZnO nanosheet arrays film is driven to mimic ciliary motion like nature beating cilia, which can boost the interior mass transfer and help to promote release of active sites for improving the photocatalytic activity. As a consequence of the exposed (001) high active facets, the singular ability of microfluidic manipulation has greater effect on ZnO nanosheet arrays films. The enhancement of photocatalytic activity of the actuated ZnO nanosheet arrays film is much more than that of ZnO nanorod arrays film.

  10. Random lasing of ZnO thin films grown by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Cachoncinlle, C.; Hebert, C.; Perrière, J.; Nistor, M.; Petit, A.; Millon, E.

    2015-05-01

    Low-dimensional semiconductor structures on nanometer scale are of great interest because of their strong potential applications in nanotechnologies. We report here optical and structural properties on UV lasing in ZnO thin films. The ZnO films, 110 nm thick, were prepared using pulsed-laser deposition on c-cut sapphire substrates at 500 °C under 10-2 oxygen pressure. The ZnO films are nearly stoichiometric, dense and display the wurtzite phase. The films are highly textured along the ZnO c-axis and are constituted of nanocrystallites. According to Hall measurements these films are conductive (0.11 Ω cm). Photoluminescence measurements reveals a so-called random lasing in the range 390 to 410 nm, when illuminating at 355 nm with a tripled frequency pulsed Nd-YAG laser. Such random lasing is obtained at rather low optical pumping, 45 kW cm-2, a value lower than those classically reported for pulsed-laser deposition thin films.

  11. Fabrication and Characterization of High-Crystalline Nanoporous ZnO Thin Films by Modified Thermal Evaporation System

    NASA Astrophysics Data System (ADS)

    Islam, M. S.; Hossain, M. F.; Razzak, S. M. A.; Haque, M. M.; Saha, D. K.

    2016-05-01

    The aim of this work is to fabricate high-crystalline nanoporous zinc oxide (ZnO) thin films by a modified thermal evaporation system. First, zinc thin films have been deposited on bare glass substrate by the modified thermal evaporation system with pressure of 0.05mbar, source-substrate distance of 3cm and source temperature 700∘C. Then, high-crystalline ZnO thin film is obtained by annealing at 500∘C for 2h in atmosphere. The prepared ZnO films are characterized with various deposition times of 10min and 20min. The structural property was investigated by X-ray diffractometer (XRD). The optical bandgap and absorbance/transmittance of these films are examined by ultraviolet/visible spectrophotometer. The surface morphological property has been observed by scanning electron microscope (SEM). ZnO films have showed uniform nanoporous surface with high-crystalline hexagonal wurtzite structure. The ZnO films prepared with 20min has excitation absorption-edge at 369nm, which is blueshifted with respect to the bulk absorption-edge appearing at 380nm. The gap energy of ZnO film is decreased from 3.14eV to 3.09eV with increase of the deposition time, which can enhance the excitation of ZnO films by the near visible light, and is suitable for the application of photocatalyst of waste water cleaning and polluted air purification.

  12. Growth and optical properties of ZnO nanorod arrays on Al-doped ZnO transparent conductive film

    PubMed Central

    2013-01-01

    ZnO nanorod arrays (NRAs) on transparent conductive oxide (TCO) films have been grown by a solution-free, catalyst-free, vapor-phase synthesis method at 600°C. TCO films, Al-doped ZnO films, were deposited on quartz substrates by magnetron sputtering. In order to study the effect of the growth duration on the morphological and optical properties of NRAs, the growth duration was changed from 3 to 12 min. The results show that the electrical performance of the TCO films does not degrade after the growth of NRAs and the nanorods are highly crystalline. As the growth duration increases from 3 to 8 min, the diffuse transmittance of the samples decreases, while the total transmittance and UV emission enhance. Two possible nanorod self-attraction models were proposed to interpret the phenomena in the sample with 9-min growth duration. The sample with 8-min growth duration has the highest total transmittance of 87.0%, proper density about 75 μm−2, diameter about 26 nm, and length about 500 nm, indicating that it can be used in hybrid solar cells. PMID:23566567

  13. Growth and optical properties of ZnO nanorod arrays on Al-doped ZnO transparent conductive film.

    PubMed

    Lin, Suanzhi; Hu, Hailong; Zheng, Weifeng; Qu, Yan; Lai, Fachun

    2013-04-08

    ZnO nanorod arrays (NRAs) on transparent conductive oxide (TCO) films have been grown by a solution-free, catalyst-free, vapor-phase synthesis method at 600°C. TCO films, Al-doped ZnO films, were deposited on quartz substrates by magnetron sputtering. In order to study the effect of the growth duration on the morphological and optical properties of NRAs, the growth duration was changed from 3 to 12 min. The results show that the electrical performance of the TCO films does not degrade after the growth of NRAs and the nanorods are highly crystalline. As the growth duration increases from 3 to 8 min, the diffuse transmittance of the samples decreases, while the total transmittance and UV emission enhance. Two possible nanorod self-attraction models were proposed to interpret the phenomena in the sample with 9-min growth duration. The sample with 8-min growth duration has the highest total transmittance of 87.0%, proper density about 75 μm-2, diameter about 26 nm, and length about 500 nm, indicating that it can be used in hybrid solar cells.

  14. CdS quantum dots sensitized Cu doped ZnO nanostructured thin films for solar cell applications

    NASA Astrophysics Data System (ADS)

    Poornima, K.; Gopala Krishnan, K.; Lalitha, B.; Raja, M.

    2015-07-01

    ZnO nanorods and Cu doped ZnO nanorods thin films have been prepared by simple hydrothermal method. CdS quantum dots are sensitized with Cu doped ZnO nanorod thin films using successive ionic layer adsorption and reaction (SILAR) method. The X-ray diffraction study reveals that ZnO nanorods, and CdS quantum dot sensitized Cu doped ZnO nanorods exhibit hexagonal structure. The scanning electron microscope image shows the presence of ZnO nanorods. The average diameter and length of the aligned nanorod is 300 nm and 1.5 μm respectively. The absorption spectra shows that the absorption edge of CdS quantum dot sensitized ZnO nanorod thin film is shifted toward longer wavelength region when compared to the absorption edge of ZnO nanorods film. The conversion efficiency of the CdS quantum dot sensitized Cu doped ZnO nanorod thin film solar cell is 1.5%.

  15. Control of polarity of ZnO films grown by plasma-assisted molecular-beam epitaxy: Zn- and O-polar ZnO films on Ga-polar GaN templates

    NASA Astrophysics Data System (ADS)

    Hong, Soon-Ku; Hanada, Takashi; Ko, Hang-Ju; Chen, Yefan; Yao, Takafumi; Imai, Daisuke; Araki, Kiyoaki; Shinohara, Makoto

    2000-11-01

    We report on the growth of polarity-controlled ZnO films by plasma-assisted molecular-beam epitaxy. Different polar (Zn- and O-polar) ZnO films on unipolar (Ga-polar) GaN epilayers are selectively grown. Polarity of ZnO films is evaluated by coaxial impact collision ion scattering spectroscopy. Zn preexposure prior to ZnO growth results in Zn-polar ZnO films (Zn face), while O-plasma preexposure leads to the growth of O-polar ZnO films (O face). High-resolution transmission electron microscopy reveals the formation of an interface layer between ZnO and GaN epilayers in O-plasma preexposed samples, while no interface layer is observed in Zn preexposed samples. The interface layer is identified as single crystalline, monoclinic Ga2O3. We propose models for interface configurations at ZnO/GaN heterointerfaces, which can successfully explain the different polarities of the ZnO films.

  16. Disposable urea biosensor based on nanoporous ZnO film fabricated from omissible polymeric substrate.

    PubMed

    Rahmanian, Reza; Mozaffari, Sayed Ahmad; Abedi, Mohammad

    2015-12-01

    In the present study, a facile and simple fabrication method of a semiconductor based urea biosensor was reported via three steps: (i) producing a ZnO-PVA composite film by means of a polymer assisted electrodeposition of zinc oxide (ZnO) on the F-doped SnO2 conducting glass (FTO) using water soluble polyvinyl alcohol (PVA), (ii) obtaining a nanoporous ZnO film by PVA omission via a subsequent post-treatment by annealing of the ZnO-PVA film, and (iii) preparation of a FTO/ZnO/Urs biosensor by exploiting a nanoporous ZnO film as an efficient and excellent platform area for electrostatic immobilization of urease enzyme (Urs) which was forced by the difference in their isoelectric point (IEP). The characterization techniques focused on the analysis of the ZnO-PVA film surfaces before and after annealing, which had a prominent effect on the porosity of the prepared ZnO film. The surface characterization of the nanostructured ZnO film by a field emission-scanning electron microscopy (FE-SEM), exhibited a film surface area as an effective bio-sensing matrix for enzyme immobilization. The structural characterization and monitoring of the biosensor fabrication was performed using UV-Vis, Fourier Transform Infrared (FT-IR), Raman Spectroscopy, Thermogravimetric Analysis (TGA), Cyclic Voltammetry (CV), and Electrochemical Impedance Spectroscopy (EIS) techniques. The impedimetric results of the FTO/ZnO/Urs biosensor showed a high sensitivity for urea detection within 8.0-110.0mg dL(-1) with the limit of detection as 5.0mg dL(-1). Copyright © 2015 Elsevier B.V. All rights reserved.

  17. Structural, optical and electronic properties of Fe doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Singh, Karmvir; Devi, Vanita; Dhar, Rakesh; Mohan, Devendra

    2015-09-01

    Fe doped ZnO thin films have been deposited by pulsed laser deposition technique on quartz substrate to study structural, optical and electronic structure using XRD, AFM, UV-visible and X-ray absorption spectroscopy. XRD study reveals that Fe doping has considerable effect on stress, strain, grain size and crystallinity of thin films. UV-visible study determines that band gap of pristine ZnO decreases with Fe doping, which can be directly correlated to transition tail width and grain size. Change in electronic structure with Fe doping has been examined by XAS study.

  18. ZnO nanotube waveguide arrays on graphene films for local optical excitation on biological cells

    NASA Astrophysics Data System (ADS)

    Baek, Hyeonjun; Kwak, Hankyul; Song, Minho S.; Ha, Go Eun; Park, Jongwoo; Tchoe, Youngbin; Hyun, Jerome K.; Park, Hye Yoon; Cheong, Eunji; Yi, Gyu-Chul

    2017-04-01

    We report on scalable and position-controlled optical nanoprobe arrays using ZnO nanotube waveguides on graphene films for use in local optical excitation. For the waveguide fabrication, position-controlled and well-ordered ZnO nanotube arrays were grown on chemical vapor deposited graphene films with a submicron patterned mask layer and Au prepared between the interspace of nanotubes. Mammalian cells were cultured on the nanotube waveguide arrays and were locally excited by light illuminated through the nanotubes. Fluorescence and optogenetic signals could be excited through the optical nanoprobes. This method offers the ability to investigate cellular behavior with a high spatial resolution that surpasses the current limitation.

  19. Physical and electrochemical properties of ZnO films fabricated from highly cathodic electrodeposition potentials

    NASA Astrophysics Data System (ADS)

    Ismail, Abdul Hadi; Abdullah, Abdul Halim; Sulaiman, Yusran

    2017-03-01

    The physical and electrochemical properties of zinc oxide (ZnO) film electrode that were prepared electrochemically were studied. ZnO was electrodeposited on ITO glass substrate by applying three different highly cathodic potentials (-1.3 V, -1.5 V, -1.7 V) in a solution containing 70 mM of Zn(NO3)2.xH2O and 0.1 M KCl with bath temperatures of 70 °C and 80 °C. The presence of ZnO was asserted from XRD analysis where the corresponding peaks in the spectra were assigned. SEM images revealed the plate-like hexagonal morphology of ZnO which is in agreement with the XRD analysis. The areal capacitance of the ZnO was observed to increase when the applied electrodeposition potential is increased from -1.3 V to -1.5 V. However, the areal capacitance is found to decrease when the applied electrodeposition potential is further increased to -1.7 V. The resistance of charge transfer (Rct) of the ZnO decreased when the applied electrodeposition potential varies from -1.3 V to -1.7 V due to the decreased particle size of ZnO when more cathodic electrodeposition potential is applied.

  20. Effect of polyvinyl alcohol on electrochemically deposited ZnO thin films for DSSC applications

    NASA Astrophysics Data System (ADS)

    Marimuthu, T.; Anandhan, N.

    2017-05-01

    Nanostructures of zinc oxide (ZnO) thin film are electrochemically deposited in the absence and presence of polyvinyl alcohol (PVA) on fluorine doped tin oxide (FTO) substrate. X-ray diffraction (XRD) patterns and Raman spectroscopy confirmed the formation of hexagonal structure of ZnO. The film prepared in the presence of PVA showed a better crystallinity and its crystalline growth along the (002) plane orientation. Field emission scanning electron microscope (FE-SEM) images display nanowire arrays (NWAs) and sponge like morphology for films prepared in the absence and presence of PVA, respectively. Photoluminescence (PL) spectra depict the film prepared in the presence PVA having less atomic defects with good crystal quality compared with other film. Dye sensitized solar cell (DSSC) is constructed using low cost eosin yellow dye and current-voltage (J-V) curve is recorded for optimized sponge like morphology based solar cell.

  1. Pulse laser deposited nanostructured ZnO thin films: a review.

    PubMed

    Kumar, Rajesh; Kumar, Girish; Umar, Ahmad

    2014-02-01

    This review summarizes the work principles of pulse laser deposition (PLD) apparatus, physical processes like ablation, and plasma plume formation accompanying the deposition of un-doped ZnO from target to substrate material. Various modes of deposition and factors influencing the properties of thin films such as substrate temperature, background gas pressure, laser energy density (laser fluence), target to substrate distance, repetition rate, oxygen partial pressure in deposition chamber, deposition time and post growth annealing which control deposition parameters such as adsorption, desorption, surface diffusion, nucleation, and crystallization/re-crystallization are also discussed in this review. Moreover, various film properties such as morphology, roughness of the film surface, film thickness, grain size, optical transmittance, sensitivity, electrical conductivity, uniformity and electrical resistivity of the deposited ZnO thin films have also been enumerated in the present review.

  2. Microstructure and optical properties of nitrogen-doped ZnO film

    NASA Astrophysics Data System (ADS)

    Zhao, Xian-Wei; Gao, Xiao-Yong; Chen, Xian-Mei; Chen, Chao; Zhao, Meng-Ke

    2013-02-01

    The nitrogen doping of ZnO film deposited by the magnetron sputtering method is subsequently realized by the hydrothermal synthesis method. The nitrogen-doped ZnO film is preferably (002) oriented. With the increase of hexamethylenetetramine (HMT) solution concentration, the average grain size of the film along the <002> direction almost immediately decreases and then monotonously increases, conversely, the lattice strain first increases and then decreases. The structural evolution of the film surface from compact and even to sparse and rough is attributed to the enhanced nitrogen doping content in the hydrothermal process. The transmission and photoluminescence properties of the film are closely related to grain size, lattice strain, and nitrogen-related defect arising from the enhanced nitrogen doping content with HMT concentration increasing.

  3. Mechanical and transparent conductive properties of ZnO and Ga-doped ZnO films sputtered using electron-cyclotron-resonance plasma on polyethylene naphtalate substrates

    SciTech Connect

    Akazawa, Housei

    2014-03-15

    Transparent conductive ZnO and Ga-doped ZnO (GZO) films were deposited on polyethylene naphtalate (PEN) sheet substrates using electron cyclotron resonance plasma sputtering. Both ZnO and GZO films were highly adhesive to the PEN substrates without inserting an intermediate layer in the interface. When compared at the same thickness, the transparent conductive properties of GZO films on PEN substrates were only slightly inferior to those on glass substrates. However, the carrier concentration of ZnO films on PEN substrates was 1.5 times that of those on glass substrates, whereas their Hall mobility was only 60% at a thickness of 300 nm. The depth profile of elements measured by secondary ion mass spectroscopy revealed the diffusion of hydrocarbons out of the PEN substrate into the ZnO film. Hence, doped carbons may act as donors to enhance carrier concentration, and the intermixing of elements at the interface may deteriorate the crystallinity, resulting in the lower Hall mobility. When the ZnO films were thicker than 400 nm, cracks became prevalent because of the lattice mismatch strain between the film and the substrate, whereas GZO films were free of cracks. The authors investigated how rolling the films around a cylindrical pipe surface affected their conductive properties. Degraded conductivity occurred at a threshold pipe radius of 10 mm when tensile stress was applied to the film, but it occurred at a pipe radius of 5 mm when compressive stress was applied. These values are guidelines for bending actual devices fabricated on PEN substrates.

  4. Synthesis and conductivity enhancement of Al-doped ZnO nanorod array thin films.

    PubMed

    Hsu, Chih-Hsiung; Chen, Dong-Hwang

    2010-07-16

    Al-doped ZnO (AZO) nanorod array thin films with various Al/Zn molar ratios were synthesized by chemical bath deposition. The resultant AZO nanorods were well-aligned at the glass substrate, growing vertically along the c-axis [001] direction. In addition, they had an average diameter of 64.7 +/- 16.8 nm and an average length of about 1.0 microm with the structure of wurtzite-type ZnO. Analyses of energy dispersive x-ray spectra and x-ray photoelectron spectra indicated that Al atoms had been doped into the ZnO crystal lattice. The doping of Al atoms did not result in significant changes in the structure and crystal orientation, but the electrical resistivity was found to increase first and then decrease with increasing Al content owing to the increase of carrier concentration and the decrease of mobility. In addition, the transmission in the visible region increased but the increase was reduced at higher Al doping levels. After hydrogen treatment, the morphology of the AZO nanorod array thin films remained unchanged. However, the electrical resistivity decreased significantly due to the formation of oxygen vacancies and interstitial hydrogen atoms. When the real Al/Zn molar ratio was about 3.7%, the conductivity was enhanced about 1000 times and a minimum electrical resistivity of 6.4 x 10( - 4) Omega cm was obtained. In addition, the transmission of the ZnO nanorod array thin film in the visible region was significantly increased but the increase was less significant for the AZO nanorod array thin film, particularly at higher Al doping levels. In addition, the current-voltage curves of the thin film devices with ZnO or AZO nanorod arrays revealed that AZO had a higher current response than ZnO and hydrogen treatment led to a more significant enhancement of current responses (about 100-fold).

  5. Study on Solid-Phase Crystallization of Amorphized Vanadium-Doped ZnO Thin Films

    NASA Astrophysics Data System (ADS)

    Watanabe, Akihiro; Chiba, Hiroshi; Kawashima, Tomoyuki; Washio, Katsuyoshi

    2016-04-01

    The effects of post-annealing and film thickness on the solid-phase crystallization (SPC) of amorphized vanadium-doped ZnO (VZO) thin films were investigated. The 2-500-nm-thick VZO (V of about 4 at.%) thin films were deposited on a c-face sapphire substrate at room temperature by RF magnetron sputtering and subsequently were annealed at an annealing temperature (T A) from 700°C to 900°C in a nitrogen atmosphere. From in-plane x-ray diffraction (XRD) measurements, the as-deposited VZO film had a faint in-plane orientation at the initial stage of deposition. However, the ZnO(100) XRD intensity weakened with increasing film thickness and no diffraction peak was seen over 35-nm thick. That is, the pseudo-amorphous film was fabricated. By annealing the 100-nm-thick VZO film over 700°C, the sixfold symmetry appeared. The ZnO(100) XRD intensity increased sharply at a T A of 800°C and was saturated at a higher T A. The c axis orientation reached a peak at a T A of 800°C according to the ZnO(002) XRD intensity. Concerning the effect of film thickness in the case of T A = 800°C, both the in-plane and c axis orientation improved up to 100-nm thick and deteriorated over it. At a T A ≥ 850°C or film thickness ≥200 nm, where the c axis orientation was deteriorated, the secondary phase-like Zn3V2O8 was formed. As a result, it is found that the careful selection of the T A and film thickness is necessary to avoid the formation of secondary phase-like Zn3V2O8 to fabricate the high-quality buffer layer via SPC.

  6. Photocatalytic efficiency of reusable ZnO thin films deposited by sputtering technique

    NASA Astrophysics Data System (ADS)

    Ahumada-Lazo, R.; Torres-Martínez, L. M.; Ruíz-Gómez, M. A.; Vega-Becerra, O. E.; Figueroa-Torres, M. Z.

    2014-12-01

    The photocatalytic activity of ZnO thin films with different physicochemical characteristics deposited by RF magnetron sputtering on glass substrate was tested for the decolorization of orange G dye aqueous solution (OG). The crystalline phase, surface morphology, surface roughness and the optical properties of these ZnO films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and UV-visible spectroscopy (UV-Vis), respectively. The dye photodecolorization process was studied at acid, neutral and basic pH media under UV irradiation of 365 nm. Results showed that ZnO films grow with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a (002) preferential crystalline orientation. A clear relationship between surface morphology and photocatalytic activity was observed for ZnO films. Additionally, the recycling photocatalytic abilities of the films were also evaluated. A promising photocatalytic performance has been found with a very low variation of the decolorization degree after five consecutive cycles at a wide range of pH media.

  7. Novel ZnO nanorod films by chemical solution deposition for planar device applications.

    PubMed

    Singh, D; Narasimulu, A A; Garcia-Gancedo, L; Fu, Y Q; Soin, N; Shao, G; Luo, J K

    2013-07-12

    Smooth and continuous ZnO films consisting of densely packed ZnO nanorods (NRs), which can be used for electronic device fabrication, were synthesized using a hydro-thermo-chemical solution deposition method. Such devices would have the novelty of high performance, benefiting from the inherited unique properties of the nanomaterials, and can be fabricated on these smooth films using a conventional, low cost planar process. Photoluminescence measurements showed that the NR films have much stronger shallow donor to valence band emissions than those from discrete ZnO NRs, and hence have the potential for the development of ZnO light emission diodes and lasers, etc. The NR films have been used to fabricate large area surface acoustic wave devices by conventional photolithography. These demonstrated two well-defined resonant peaks and their potential for large area device applications. The chemical solution deposition method is simple, reproducible, scalable and economic. These NR films are suitable for large scale production on cost-effective substrates and are promising for various fields such as sensing systems, renewable energy and optoelectronic applications.

  8. Formation of Al-doped ZnO thin films on glass by sol-gel process and characterization

    NASA Astrophysics Data System (ADS)

    Shahid, M. U.; Deen, K. M.; Ahmad, A.; Akram, M. A.; Aslam, M.; Akhtar, W.

    2016-02-01

    In this study, pure ZnO and Al-doped ZnO thin films were developed on glass by sol-gel process followed by drying and annealing in air at 170 and 400 °C, respectively. The surface morphology and structural characteristics were determined through scanning electron microscopy, atomic force microscopy and X-ray diffraction. The Fourier transform infrared spectroscopy validated the formation of Al-doped ZnO film on glass substrate. It was evaluated that 1 at% aluminum (Al) doping in ZnO film showed low electrical resistivity and higher charge carrier concentration due to uniformly dispersed regular shape crystallites as compared to pure ZnO and 2 at% `Al'-doped thin films.

  9. Plasmonic enhancement of optical absorption of UV radiation by Au nanoparticles dispersed on ZnO thin film

    NASA Astrophysics Data System (ADS)

    Rajan, Akshta; Yadav, Harish K.; Gupta, Vinay; Tomar, Monika

    2014-09-01

    Ultraviolet photoconductivity in sol gel-derived ZnO thin film loaded with gold (Au) nanoparticle (NPs) is investigated. Au-NPs loaded ZnO thin film (Au-NPs/ZnO) is found to exhibit high photoconducting gain ( K) of about 4.12 × 103 as compared to the bare ZnO thin film-based photodetector (4.9 × 101). The enhanced photoconductive gain of Au-NPs/ZnO detector has been achieved due to simultaneous lowering of dark current which occurs due to Schottky barrier effect originated after dispersing the Au NPs on the surface of ZnO thin film. The enhancement in photocurrent upon UV illumination is due to trapping of UV radiation via plasmonic effect caused by Au-NPs and subsequently coupling of absorbed light with the optical modes of underlying semiconducting ZnO surface.

  10. Pulsed laser deposited cobalt-doped ZnO thin film

    NASA Astrophysics Data System (ADS)

    Wang, Li; Su, Xue-qiong; Lu, Yi; Chen, Jiang-bo

    2013-09-01

    To realize the room-temperature ferromagnetism (RTFM) in diluted magnetic semiconductors (DMS), we prepared a series of Cobalt-doped ZnO thin films using pulsed laser deposition (PLD) at deposition temperatures 500°C under oxygen pressure from 2.5×10-4 Pa to 15 Pa. To elucidate the physical origin of RTFM, Co 2p spectra of cobalt-doped ZnO thin films was measured by X-ray photoelectron spectroscopy (XPS). The magnetic properties of films were measured by an alternating gradient magnetometer (AGM), and the electrical properties were detected by a Hall Effect instrument using the Van der Pauw method. XPS analysis shows that the Co2+ exists and Co clusters and elemental content change greatly in samples under various deposition oxygen pressures. Not only the valence state and elemental content but also the electrical and magnetic properties were changed. In the case of oxygen pressure 10 Pa, an improvement of saturation magnetic moment about one order of magnitude over other oxygen pressure experiments, and the film exhibits ferromagnetism with a curie temperature above room temperature. It was found that the value of carrier concentration in the Co-doped ZnO film under oxygen pressure 10Pa increases about one order of magnitude than the values of other samples under different oxygen pressure. Combining XPS with AGM measurements, we found that the ferromagnetic signals in cobalt-doped ZnO thin film deposited at 500 °C under oxygen pressure 10 Pa only appear with the detectable Co2+ spectra from incompletely oxidized Co metal or Co cluster. So oxygen pressure 10 Pa can be thought the best condition to obtain room-temperature dilute magnetic semiconductor about cobalt-doped ZnO thin films.

  11. Crystallographic tilt and in-plane anisotropies of an a-plane InGaN/GaN layered structure grown by MOCVD on r-plane sapphire using a ZnO buffer

    NASA Astrophysics Data System (ADS)

    Liu, H. F.; Liu, W.; Guo, S.; Chi, D. Z.

    2016-03-01

    High-resolution x-ray diffraction (HRXRD) was used to investigate the crystallographic tilts and structural anisotropies in epitaxial nonpolar a-plane InGaN/GaN grown by metal-organic chemical vapor deposition on r-plane sapphire using a ZnO buffer. The substrate had an unintentional miscut of 0.14° towards its [-4 2 2 3] axis. However, HRXRD revealed a tilt of 0.26° (0.20°) between the ZnO (GaN) (11-20) and the Al2O3 (1-102) atomic planes, with the (11-20) axis of ZnO (GaN) tilted towards its c-axis, which has a difference of 163° in azimuth from that of the substrate’s miscut. Excess broadenings in the GaN/ZnO (11-20) rocking curves (RCs) were observed along its c-axis. Specific analyses revealed that partial dislocations and anisotropic in-plane strains, rather than surface-related effects, wafer curvature or stacking faults, are the dominant factors for the structural anisotropy. The orientation of the partial dislocations is most likely affected by the miscut of the substrate, e.g. via tilting of the misfit dislocation gliding planes created during island coalescences. Their Burgers vector components in the growth direction, in turn, gave rise to crystallographic tilts in the same direction as that of the excess RC-broadenings.

  12. Preparation of Ni doped ZnO thin films by SILAR and their characterization

    NASA Astrophysics Data System (ADS)

    Mondal, S.; Mitra, P.

    2013-02-01

    Pure and nickel (Ni) doped zinc oxide (NZO) thin films were deposited on glass substrates from ammonium zincate bath using successive ion layer adsorption and reaction (SILAR). Characterization techniques such as XRD, TEM, SEM and EDX were utilized to investigate the effect of Ni doping on the microstructure of Ni:ZnO thin films. Structural characterization by X-ray diffraction reveals the polycrystalline nature of the films. Particle size shows slightly decreasing trend with increasing nickel impurification. The average particle size for pure ZnO is 22.75 nm and it reduces to 20.51 nm for 10 % Ni doped ZnO. Incorporation of Ni was confirmed from elemental analysis using EDX. The value of fundamental absorption edge is 3.23 eV for pure ZnO and it decreases to 3.19 eV for 10 % Ni:ZnO. The activation energy barrier value to electrical conduction process increases from 0.261 eV for pure ZnO to 0.293 eV for 10 % Ni doped ZnO.

  13. Pressure Effect in ZnO Films Using Off-Axis Sputtering Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, C.-H.; Lehoczky, S. L.; Peters, P.; George, M. A.

    1999-01-01

    ZnO films are deposited on (0001) sapphire, (001) Si and quartz substrates using the off-axis reactive magnetron sputtering deposition. Based on film thickness measurements, three transport regions of sputtered particles are observed when films are deposited in the pressure regions of 5 mtorr - 150 mtorr. X-ray diffraction, scanning probes microscopy, and electrical measurements are also used to characterize these films. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. The epitaxial films deposited at high pressure reveal a flat surface with some hexagonal facets. The density of hexagonal facets decreases when the growth pressure is reduced. The resistivity of these epitaxial films also depends on the growth pressures. A relationship between the pressure effects and film properties are discussed.

  14. Pressure Effect in ZnO Films Using Off-Axis Sputtering Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, C.-H.; Lehoczky, S. L.; Peters, P.; George, M. A.

    1999-01-01

    ZnO films are deposited on (0001) sapphire, (001) Si and quartz substrates using the off-axis reactive magnetron sputtering deposition. Based on film thickness measurements, three transport regions of sputtered particles are observed when films are deposited in the pressure regions of 5 mtorr - 150 mtorr. X-ray diffraction, scanning probes microscopy, and electrical measurements are also used to characterize these films. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. The epitaxial films deposited at high pressure reveal a flat surface with some hexagonal facets. The density of hexagonal facets decreases when the growth pressure is reduced. The resistivity of these epitaxial films also depends on the growth pressures. A relationship between the pressure effects and film properties are discussed.

  15. Oxygen pressure effect on optical properties and dye degradation of ZnO nanostructured films prepared by sputtering

    NASA Astrophysics Data System (ADS)

    Neelakanta Reddy, I.; Gobi Saravanan, K.; Venkata Reddy, Ch; Cho, Migyung; Shim, Jaesool; Kim, Dongseob

    2017-09-01

    The effect of oxygen pressure on structural, morphological and photocatalytic properties of ZnO nanostructured films deposited on glass substrates via RF magnetron sputtering was investigated. The structural, morphology and oxidation states of the films were investigated by x-ray diffraction, scanning electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. UV–vis spectroscopy and photoluminescence spectroscopy were used to analyze the degradation and optical properties of ZnO thin films. The grown films showed wurtzite hexagonal crystalline nanostructures with a favored orientation along the direction of (0 0 2) lattice plane. The morphology images showed a hierarchical ZnO nanostructured films with various shapes from circulars to foils and even much more multifaceted circular shapes and triangular sheets-like shapes by varying the oxygen pressure. The foil type ZnO nanostructured films showed significant photocatalytic activity concerning the degradation of methyl orange, mainly due to their surface-to-volume ratio.

  16. A comparative study of physico-chemical properties of CBD and SILAR grown ZnO thin films

    SciTech Connect

    Jambure, S.B.; Patil, S.J.; Deshpande, A.R.; Lokhande, C.D.

    2014-01-01

    Graphical abstract: Schematic model indicating ZnO nanorods by CBD (Z{sub 1}) and nanograins by SILAR (Z{sub 2}). - Highlights: • Simple methods for the synthesis of ZnO thin films. • Comparative study of physico-chemical properties of ZnO thin films prepared by CBD and SILAR methods. • CBD outperforms SILAR method. - Abstract: In the present work, nanocrystalline zinc oxide (ZnO) thin films have been successfully deposited onto glass substrates by simple and economical chemical bath deposition (CBD) and successive ionic layer adsorption reaction (SILAR) methods. These films were further characterized for their structural, optical, surface morphological and wettability properties. The X-ray diffraction (XRD) patterns for both CBD and SILAR deposited ZnO thin films reveal the highly crystalline hexagonal wurtzite structure. From optical studies, band gaps obtained are 2.9 and 3.0 eV for CBD and SILAR deposited thin films, respectively. The scanning electron microscope (SEM) patterns show growth of well defined randomly oriented nanorods and nanograins on the CBD and SILAR deposited samples, respectively. The resistivity of CBD deposited films (10{sup 2} Ω cm) is lower than that of SILAR deposited films (10{sup 5} Ω cm). Surface wettability studies show hydrophobic nature for both films. From the above results it can be concluded that CBD grown ZnO thin films show better properties as compared to SILAR method.

  17. Development and surface characterization of a glucose biosensor based on a nanocolumnar ZnO film

    NASA Astrophysics Data System (ADS)

    Rodrigues, A.; Castegnaro, M. V.; Arguello, J.; Alves, M. C. M.; Morais, J.

    2017-04-01

    Highly oriented nanostructured ZnO films were grown on the surface of stainless steel plates (ZnO/SS) by chemical bath deposition (CBD). The films consisted of vertically aligned ZnO nanocolumns, ∼1 μm long and ∼80 nm wide, as observed by SEM (scanning electron microscopy) and FIB (focused ion beam). XRD (X-ray diffraction) confirmed the c-axis preferred orientation of the ZnO columns, which were functionalized with the glucose oxidase (GOx) enzyme into a biosensor of glucose. The electrochemical response studied by CV (cyclic voltammetry) proved that the biosensor was capable of detecting glucose from 1.5 up to 16 mM concentration range. XPS (X-ray photoelectron spectroscopy) analysis, excited with synchrotron radiation, probed the atom specific chemical environment at the electrode's surface and shed some light on the nature of the ZnO-GOx interaction.

  18. Photopatternable nano-composite (SU-8/ZnO) thin films for piezo-electric applications

    NASA Astrophysics Data System (ADS)

    Kandpal, Manoj; Sharan, Chandrashekhar; Poddar, Pankaj; Prashanthi, K.; Apte, Prakash R.; Ramgopal Rao, V.

    2012-09-01

    Photo-curable nanocomposite material was formulated by embedding ZnO nanoparticles into a SU-8 matrix and studied for its piezoelectric properties for low cost fabrication of self-powered nanodevices. The piezoelectric coefficient of ZnO nanoparticles was observed to be ranging between 15 and 23 pm/V, which is the highest reported. These experimental studies support the recent theoretical predictions where the piezoelectric coefficients in ZnO nanoparticles were found to be higher compared to the thin films because of the surface relaxation induced volume reductions in the nanometer scale. The photo-curable property of these polymer composite films is exploited to demonstrate fabrication of a micro-cantilever test structure.

  19. Template-controlled piezoactivity of ZnO thin films grown via a bioinspired approach

    PubMed Central

    Blumenstein, Nina J; Streb, Fabian; Walheim, Stefan; Schimmel, Thomas; Bill, Joachim

    2017-01-01

    Biomaterials are used as model systems for the deposition of functional inorganic materials under mild reaction conditions where organic templates direct the deposition process. In this study, this principle was adapted for the formation of piezoelectric ZnO thin films. The influence of two different organic templates (namely, a carboxylate-terminated self-assembled monolayer and a sulfonate-terminated polyelectrolyte multilayer) on the deposition and therefore on the piezoelectric performance was investigated. While the low negative charge of the COOH-SAM is not able to support oriented attachment of the particles, the strongly negatively charged sulfonated polyelectrolyte leads to texturing of the ZnO film. This texture enables a piezoelectric performance of the material which was measured by piezoresponse force microscopy. This study shows that it is possible to tune the piezoelectric properties of ZnO by applying templates with different functionalities. PMID:28243568

  20. Nanomechanical and microstructural characterization of sputter deposited ZnO thin films

    NASA Astrophysics Data System (ADS)

    Bhardwaj, Vipul; Chowdhury, Rajib; Jayaganthan, R.

    2016-12-01

    The nano-mechanical properties of ZnO thin films deposited at different substrate temperature such as (RT) 25 °C, 100 °C, 200 °C, and 300 °C using DC-sputtering on Corning glass substrate were investigated. The ZnO thin films are found to be predominately c-axis (002) oriented. The crystal structure is sensitive to increasing substrate temperature and new set of crystal planes become visible at 300 °C as thin films become highly polycrystalline. The presence of (103) crystal plane is more pronounced with the increasing substrate temperature. However, high crystallinity and peak intensity ratio I(002)/I(103) (counts) is highest for thin films deposited at 100 °C, which is attributed for high hardness and better adhesive properties observed for ZnO thin films. Concomitantly, no major sudden burst of displacement 'pop-in' event in load-displacement curve of thin films observed during indentation, indicating the films are dense with low defects and adhered strongly to the substrate.

  1. Physical-mechanical and antimicrobial properties of nanocomposite films with pediocin and ZnO nanoparticles.

    PubMed

    Espitia, Paula Judith Perez; Soares, Nilda de Fátima Ferreira; Teófilo, Reinaldo F; Coimbra, Jane Sélia dos Reis; Vitor, Débora M; Batista, Rejane Andrade; Ferreira, Sukarno Olavo; de Andrade, Nélio José; Medeiros, Eber Antonio Alves

    2013-04-15

    This work aimed to develop nanocomposite films of methyl cellulose (MC) incorporated with pediocin and zinc oxide nanoparticles (nanoZnO) using the central composite design and response surface methodology. This study evaluated film physical-mechanical properties, including crystallography by X-ray diffraction, mechanical resistance, swelling and color properties, microscopy characterization, thermal stability, as well as antimicrobial activity against Staphylococcus aureus and Listeria monocytogenes. NanoZnO and pediocin affected the crystallinity of MC. Load at break and tensile strength at break did not differ among films. NanoZnO and pediocin significantly affected the elongation at break. Pediocin produced yellowish films, but nano ZnO balanced this effect, resulting in a whitish coloration. Nano ZnO exhibited good intercalation in MC and the addition of pediocin in high concentrations resulted crater-like pits in the film surfaces. Swelling of films diminished significantly compared to control. Higher concentrations of Nano ZnO resulted in enhanced thermal stability. Nanocomposite films presented antimicrobial activity against tested microorganisms.

  2. Tuning the Surface Morphologies and Properties of ZnO Films by the Design of Interfacial Layer.

    PubMed

    Li, Yaping; Wang, Hui-Qiong; Zhou, Hua; Du, Damin; Geng, Wei; Lin, Dingqu; Chen, Xiaohang; Zhan, Huahan; Zhou, Yinghui; Kang, Junyong

    2017-09-26

    Wurtzite ZnO films were grown on MgO(111) substrates by plasma-assisted molecular beam epitaxy (MBE). Different initial growth conditions were designed to monitor the film quality. All the grown ZnO films show highly (0001)-oriented textures without in-plane rotation, as illustrated by in situ reflection high-energy electron diffraction (RHEED) and ex situ X-ray diffraction (XRD). As demonstrated by atomic force microscopy (AFM) images, "ridge-like" and "particle-like" surface morphologies are observed for the ZnO films grown in a molecular O2 atmosphere with and without an initial deposition of Zn adatoms, respectively, before ZnO growth with oxygen plasma. This artificially designed interfacial layer deeply influences the final surface morphology and optical properties of the ZnO film. From room-temperature photoluminescence (PL) measurements, a strong defect-related green luminescence band appears for the ZnO film with a "particle-like" morphology but was hardly observed in the films with flat "ridge-like" surface morphologies. Our work suggests that the ZnO crystallinity can be improved and defect luminescence can be reduced by designing interfacial layers between substrates and epilayers.

  3. Effects of high magnetic field assisted annealing on structure and optical, electric properties of electrodeposited ZnO films

    NASA Astrophysics Data System (ADS)

    Gao, Yang; Li, Guojian; Wu, Chun; Sui, Xudong; Du, Jiaojiao; Wang, Qiang

    2017-01-01

    Electrodeposited ZnO films have been annealed at 300 °C for 2 h under 12 T high magnetic field (HMF) with the directions of parallel and perpendicular to the films, respectively. The structural, optical and electric properties were characterized by scanning electron microscopy, X-ray diffraction, photoluminescence (PL) spectra, X-ray photoemission spectroscopy (XPS) and Seebeck coefficient/electrical resistance measuring system. The results show that HMF has a significant effect on the growth of ZnO films along c-axis and leads to hexagonal platelets of ZnO growing parallel to the direction of HMF. Furthermore, the hexagonal platelets become bulky platelets with an obvious trendy rotating their c-axis parallel to the substrate. The PL spectra of all the films exhibits the UV and blue emission, moreover, the blue emission plays the main role. The resistivity of ZnO films increases with the increase of measure temperature, which shows a typical degenerate semiconductor characteristic. HMF reduces significantly the intensity of whole emission peaks and the resistivity of ZnO films. These may be attribute to the significant changes of the structure and morphology of ZnO films, leading to various amounts of the defects in the ZnO crystal.

  4. Well-Aligned Arrays of Vertically Oriented ZnO Nanorod Films for Photocatalytic Degradation of Textile Dye

    NASA Astrophysics Data System (ADS)

    Nasr-Esfahani, Mojtaba; Nekoubin, Amin

    2011-05-01

    Well-aligned hexagonal ZnO nanorods arrays were synthesized via mild hydrothermal method under different conditions. A two-step approach was employed for the epitaxial growth of ZnO. First a ZnO seed layer was prepared by spin-coating process and then ZnO nanorods were deposited on it. The influences of growth time on the surface morphology, length, diameters and phase structure of ZnO rods films were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The photocatalytic degradation of X6G an anionic monoazo dye, in aqueous solutions, was investigated and the effects of hydrothermal process time were examined. The results showed that the ZnO nonorods film hydrothermal treated for 4 h have a very high photocatalytic performance.

  5. Modification of ZnO Thin Films by Ni, Cu, and Cd Doping*1

    NASA Astrophysics Data System (ADS)

    Jiménez-González, A. E.

    1997-02-01

    With the propose of investigating the effect of transition elements in ZnO thin films prepared by the Successive Ion Layer Adsorption and Reaction (SILAR) technique, the deposition solutions were chemically impurified with Ni, Cu, and Cd, as elements of the Ib, IIb, and VIIIa groups. X-ray fluorescence (XRF) analyses confirm that the impurification with Ni and Cu in fact took place but the impurification with Cd did not, while the XRD analyses show that foras preparedand Ni-impurified annealed films, the crystallites are almost oriented along thecaxis. The electrical properties of the ZnO films were also modified with the impurification. After annealing in air (450°C) the dark conductivity of the films was increased in the case of Ni and Cd impurification up to 1.80×10-3and 1.86×10-2[Ω cm]-1, respectively, but it decreased drastically in the case of Cu to 5.51×10-7[Ω cm]-1, as referred to the dark conductivity (1.86×10-4[Ω cm]-1) of the pure ZnO sample. The measured activation energy for the electrical conductivity of the modified ZnO thin films is 55 meV for the Ni modification, indicating the existence of donor levels. On the other hand, the Cu modification increases the activation energy up to 132 meV, which is higher than the activation energy for pure ZnO thin films (98 meV).

  6. A study on the evolution of dielectric function of ZnO thin films with decreasing film thickness

    SciTech Connect

    Li, X. D.; Chen, T. P. Liu, P.; Liu, Y.; Liu, Z.; Leong, K. C.

    2014-03-14

    Dielectric function, band gap, and exciton binding energies of ultrathin ZnO films as a function of film thickness have been obtained with spectroscopic ellipsometry. As the film thickness decreases, both real (ε{sub 1}) and imaginary (ε{sub 2}) parts of the dielectric function decrease significantly, and ε{sub 2} shows a blue shift. The film thickness dependence of the dielectric function is shown related to the changes in the interband absorption, discrete-exciton absorption, and continuum-exciton absorption, which can be attributed to the quantum confinement effect on both the band gap and exciton binding energies.

  7. Galvanic deposition of nanocrystalline ZnO thin films from a ZnO Zn(OH)2 mixed phase precursor on p-Si substrate

    NASA Astrophysics Data System (ADS)

    Mukherjee, N.; Bhattacharyya, P.; Banerjee, M.; Mondal, A.; Gettens, Robert T. T.; Ghosh, P. K.; Saha, H.

    2006-05-01

    A galvanic technique for the deposition of ZnO thin films is reported. The depositions were carried out on p-type single-crystal silicon substrates at room temperature, from a solution of ZnSO4, where the Zn rod acted as a sacrificing anode and p-Si was the cathode. The deposition of ZnO by this method is pH sensitive, and a pH between 4 and 5 is found to be optimum for film deposition. This deposition technique is simple, inexpensive and can be carried out at room temperature. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies revealed the nanocrystalline structure of the films. The resistivity of the annealed ZnO films was determined by the Van der Pauw measurement technique.

  8. Photoelectrocatalytic degradation of phthalic acid using spray deposited stratified WO3/ZnO thin films under sunlight illumination

    NASA Astrophysics Data System (ADS)

    Hunge, Y. M.; Mahadik, M. A.; Moholkar, A. V.; Bhosale, C. H.

    2017-10-01

    In the present work, stratified WO3/ZnO thin films have been prepared by simple chemical spray pyrolysis technique. The structural, morphological, compositional and photoelectrocatalytic properties of the stratified WO3/ZnO thin films are studied. The photoelectrochemical (PEC) study shows that, both short circuit current (Isc) and open circuit voltage (Voc) are (Isc = 1.023 mA and Voc = 0.980 V) relatively high at 40 ml spraying quantity of ZnO solution on pre-deposited WO3 thin films. XRD analysis reveals that stratified WO3/ZnO thin films are polycrystalline with monoclinic and hexagonal crystal structures for WO3 and ZnO respectively. The specific surface area of the stratified WO3/ZnO thin film is found to be 48.12 m2 g-1. The enhanced photoelectrocatalytic activity of stratified WO3/ZnO is mainly due to the suppressing the recombination of photo generated electron-hole pairs. The end result shows that the degradation percentage of phthalic acid (PA) using stratified WO3/ZnO photo electrode has reached 63.63% after 320 min. under sunlight illumination. The amount of mineralization of phthalic acid is studied with the help of chemical oxygen demand (COD) measurement.

  9. Near band edge emission characteristics of sputtered nano-crystalline ZnO films

    SciTech Connect

    Kunj, Saurabh; Sreenivas, K.

    2016-05-06

    Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O{sub 2}) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.

  10. Enhanced optical band-gap of ZnO thin films by sol-gel technique

    NASA Astrophysics Data System (ADS)

    Raghu, P.; Naveen, C. S.; Shailaja, J.; Mahesh, H. M.

    2016-05-01

    Transparent ZnO thin films were prepared using different molar concentration (0.1 M, 0.2 M & 0.8 M) of zinc acetate on soda lime glass substrates by the sol-gel spin coating technique. The optical properties revealed that the transmittance found to decrease with increase in molar concentration. Absorption edge showed that the higher concentration film has increasingly red shifted. An increased band gap energy of the thin films was found to be direct allowed transition of ˜3.9 eV exhibiting their relevance for photovoltaic applications. The extinction coefficient analysis revealed maximum transmittance with negligible absorption coefficient in the respective wavelengths. The results of ZnO thin film prepared by sol-gel technique reveal its suitability for optoelectronics and as a window layer in solar cell applications.

  11. ZnO nanoparticle-containing emulsions for transparent, hydrophobic UV-absorbent films.

    PubMed

    Tigges, Britta; Möller, Martin; Weichold, Oliver

    2010-05-01

    A simple method for the preparation of thin, zinc oxide nanoparticle-containing films showing high UV absorption, high transmittance in the visible range (>88%), and water repellence with contact angles of 120 degrees is presented. The films are coated from an emulsion containing the hydrophobic polymer and the nanoparticles. This emulsion was prepared by mixing commercial o/w emulsions used for hydrophobic coatings on textiles with ZnO nanoparticle-containing o/w emulsions. The latter were designed so that the mixed coating formulation could be prepared without breaking. Preparation and properties of the o/w emulsions as well as the final films are elaborated. The performance of hydrophobic and hydrophilic ZnO nanoparticles during preparation and in the final film is evaluated.

  12. Growth and characterization of nonpolar, heavily Mn-substituted ZnO films

    SciTech Connect

    Shao, Q.; Ku, P. S.; Wang, X. L.; Cheng, W. F.; Ruotolo, A.; Leung, C. W.

    2014-05-07

    Eight percent of Mn was successfully diluted into nonpolar ZnO films deposited by pulsed laser deposition on single crystal (100) SrTiO{sub 3} substrates. X-ray diffraction patterns and energy-dispersive X-ray spectroscopy confirmed high crystallinity of the films and excluded unintentional magnetic doping. A unique surface domain structure was observed by scanning electron microscope and atomic force microscope, which might play a vital role to strain release induced by lattice mismatch between nonpolar (11–20) ZnO film and (100) SrTiO{sub 3} substrate. In addition, the films showed strong ferromagnetism with a large coercivity H{sub C} ∼ 180 Oe at room temperature. The large magnetic moment is ascribed to carrier-mediated exchange interaction between the Mn ions, where the majority of the carriers are oxygen vacancies.

  13. Enhanced optical band-gap of ZnO thin films by sol-gel technique

    SciTech Connect

    Raghu, P. Naveen, C. S.; Shailaja, J.; Mahesh, H. M.

    2016-05-06

    Transparent ZnO thin films were prepared using different molar concentration (0.1 M, 0.2 M & 0.8 M) of zinc acetate on soda lime glass substrates by the sol-gel spin coating technique. The optical properties revealed that the transmittance found to decrease with increase in molar concentration. Absorption edge showed that the higher concentration film has increasingly red shifted. An increased band gap energy of the thin films was found to be direct allowed transition of ∼3.9 eV exhibiting their relevance for photovoltaic applications. The extinction coefficient analysis revealed maximum transmittance with negligible absorption coefficient in the respective wavelengths. The results of ZnO thin film prepared by sol-gel technique reveal its suitability for optoelectronics and as a window layer in solar cell applications.

  14. Structural and optical properties of sputtered ZnO thin films

    NASA Astrophysics Data System (ADS)

    Flickyngerova, S.; Shtereva, K.; Stenova, V.; Hasko, D.; Novotny, I.; Tvarozek, V.; Sutta, P.; Vavrinsky, E.

    2008-04-01

    Zinc oxide (ZnO) and aluminium-doped zinc oxide (ZnO:Al) thin films were prepared by RF diode sputtering at varying deposition conditions. The effects of negative bias voltage and RF power on structural and optical properties were investigated. X-ray diffraction measurements (XRD) confirmed that both un-doped and Al-doped ZnO films are polycrystalline and have hexagonal wurtzite structure. The preferential <0 0 1> orientation and surface roughness evaluated by AFM measurements showed dependence on applied bias voltage and RF power. The sputtered ZnO and ZnO:Al films had high optical transmittance (>90%) in the wavelength range of 400-800 nm, which was not influenced by bias voltage and RF power. ZnO:Al were conductive and highly transparent. Optical band gap of un-doped and Al-doped ZnO thin films depended on negative bias and RF power and in both cases showed tendency to narrowing.

  15. Growth and optical characteristics of high-quality ZnO thin films on graphene layers

    SciTech Connect

    Park, Suk In; Tchoe, Youngbin; Baek, Hyeonjun; Hyun, Jerome K.; Yi, Gyu-Chul E-mail: gcyi@snu.ac.kr; Heo, Jaehyuk; Jo, Janghyun; Kim, Miyoung; Kim, Nam-Jung E-mail: gcyi@snu.ac.kr

    2015-01-01

    We report the growth of high-quality, smooth, and flat ZnO thin films on graphene layers and their photoluminescence (PL) characteristics. For the growth of high-quality ZnO thin films on graphene layers, ZnO nanowalls were grown using metal-organic vapor-phase epitaxy on oxygen-plasma treated graphene layers as an intermediate layer. PL measurements were conducted at low temperatures to examine strong near-band-edge emission peaks. The full-width-at-half-maximum value of the dominant PL emission peak was as narrow as 4 meV at T = 11 K, comparable to that of the best-quality films reported previously. Furthermore, the stimulated emission of ZnO thin films on the graphene layers was observed at the low excitation energy of 180 kW/cm{sup 2} at room temperature. Their structural and optical characteristics were investigated using X-ray diffraction, transmission electron microscopy, and PL spectroscopy.

  16. A back-illuminated heterojunctions ultraviolet photodetector based on ZnO film

    NASA Astrophysics Data System (ADS)

    Jiang, Xiandong; Li, Dawei; Yang, Wenjun; Wang, Jiming; Lin, Xu; Huang, Ziqiang

    2010-10-01

    In this paper, we present the investigation of a back-illuminated heterojunctions ultraviolet detector, which were fabricated by depositing Ag-doped ZnO based (ZnO-TiO2) thin film on transparent conductive layer of ITO coated quartz substrate though the reactive radio-frequency (RF) magnetron sputtering at higher oxygen pressure. The p-n junction characteristic is confirmed by current-voltage (I-V) measurements. The turn-on voltage was 6 V, with a low leakage current under reverse bias (-5 V), corresponding values was just 0.2 nA . It is clearly showed the rectifying characteristics of typical p-n junction's rectifier behaviors. The structural, component and UV (365 nm, 1400 μW/cm2) photoresponse properties were explored by X-ray diffraction (XRD), Scanning Electron Microscope (SEM), X-ray energy dispersive spectrometer (EDS) and Tektronix oscilloscope. The results showed that: Ag in substitution form in the ZnO lattice, Ag doping concentration is low, the sample is highly c-axis preferred orientation, With the increase in doped Ag volume, ZnO film of 002 peaks no longer appear. The surface of the Ag doped ZnO based film exhibits a smooth surface and very dense structure, no visible pores and defects over the film were observed.The ultraviolet response time measurements showed rise and fall time are several seconds Level.

  17. Hydrothermal Growth and Application of ZnO Nanowire Films with ZnO and TiO2 Buffer Layers in Dye-Sensitized Solar Cells

    NASA Astrophysics Data System (ADS)

    Yang, Weiguang; Wan, Farong; Chen, Siwei; Jiang, Chunhua

    2009-12-01

    This paper reports the effects of the seed layers prepared by spin-coating and dip-coating methods on the morphology and density of ZnO nanowire arrays, thus on the performance of ZnO nanowire-based dye-sensitized solar cells (DSSCs). The nanowire films with the thick ZnO buffer layer (~0.8-1 μm thick) can improve the open circuit voltage of the DSSCs through suppressing carrier recombination, however, and cause the decrease of dye loading absorbed on ZnO nanowires. In order to further investigate the effect of TiO2 buffer layer on the performance of ZnO nanowire-based DSSCs, compared with the ZnO nanowire-based DSSCs without a compact TiO2 buffer layer, the photovoltaic conversion efficiency and open circuit voltage of the ZnO DSSCs with the compact TiO2 layer (~50 nm thick) were improved by 3.9-12.5 and 2.4-41.7%, respectively. This can be attributed to the introduction of the compact TiO2 layer prepared by sputtering method, which effectively suppressed carrier recombination occurring across both the film-electrolyte interface and the substrate-electrolyte interface.

  18. ZnO thin film synthesis by reactive radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Şenay, Volkan; Pat, Suat; Korkmaz, Şadan; Aydoğmuş, Tuna; Elmas, Saliha; Özen, Soner; Ekem, Naci; Balbağ, M. Zafer

    2014-11-01

    In this study, ZnO thin films were deposited on glass substrates by reactive RF magnetron sputtering method at argon-oxygen gas mixing (1:1) atmosphere. Some properties of the synthesized films were investigated by interferometry, UV-vis spectrophotometer, atomic force microscopy, and tensiometer. Tauc method was adopted to estimate the optical band gaps. The band gaps of the deposited films were affected by film thickness. We concluded that the surface composition plays a substantial role in the values of the band gaps. Nanocrystalline structures were detected in all produced samples.

  19. Study of deposition parameters for the fabrication of ZnO thin films using femtosecond laser

    NASA Astrophysics Data System (ADS)

    Hashmi, Jaweria Zartaj; Siraj, Khurram; Latif, Anwar; Murray, Mathew; Jose, Gin

    2016-08-01

    Femtosecond (fs) pulsed laser deposition (fs-PLD) of ZnO thin film on borosilicate glass substrates is reported in this work. The effect of important fs-PLD parameters such as target-substrate distance, laser pulse energy and substrate temperature on structure, morphology, optical transparency and luminescence of as-deposited films is discussed. XRD analysis reveals that all the films grown using the laser energy range 120-230 μJ are polycrystalline when they are deposited at room temperature in a ~10-5 Torr vacuum. Introducing 0.7 mTorr oxygen pressure, the films show preferred c-axis growth and transform into a single-crystal-like film when the substrate temperature is increased to 100 °C. The scanning electron micrographs show the presence of small nano-size grains at 25 °C, which grow in size to the regular hexagonal shape particles at 100 °C. Optical transmission of the ZnO film is found to increase with an increase in crystal quality. Maximum transmittance of 95 % in the wavelength range 400-1400 nm is achieved for films deposited at 100 °C employing a laser pulse energy of 180 μJ. The luminescence spectra show a strong UV emission band peaked at 377 nm close to the ZnO band gap. The shallow donor defects increase at higher pulse energies and higher substrate temperatures, which give rise to violet-blue luminescence. The results indicate that nano-crystalline ZnO thin films with high crystalline quality and optical transparency can be fabricated by using pulses from fs lasers.

  20. Growth of crystalline ZnO films on the nitridated (0001) sapphire surface

    SciTech Connect

    Butashin, A. V.; Kanevsky, V. M.; Muslimov, A. E. Prosekov, P. A.; Kondratev, O. A.; Blagov, A. E.; Vasil’ev, A. L.; Rakova, E. V.; Babaev, V. A.; Ismailov, A. M.; Vovk, E. A.; Nizhankovsky, S. V.

    2015-07-15

    The surface morphology and structure of (0001) sapphire substrates subjected to thermochemical nitridation in a mixture of N{sub 2}, CO, and H{sub 2} gases are investigated by electron and probe microscopy and X-ray and electron diffraction. It is shown that an aluminum nitride layer is formed on the substrate surface and heteroepitaxial ZnO films deposited onto such substrates by magnetron sputtering have a higher quality when compared with films grown on sapphire.

  1. ZnO nanowire arrays synthesized on ZnO and GaN films for photovoltaic and light-emitting devices

    NASA Astrophysics Data System (ADS)

    Janfeshan, Bita; Sadeghimakki, Bahareh; Sadeghi Jahed, Navid Mohammad; Sivoththaman, Siva

    2014-01-01

    The wide bandgap, one-dimensional zinc oxide (ZnO) nanowires (NWs) and their heterostructures with other materials provide excellent pathways for efficient photovoltaic (PV) and light-emitting devices. ZnO NWs sensitized with quantum dots (QDs) provide high-surface area and tunable bandgap absorbers with a directional path for carriers in advanced PV devices, while ZnO heterojunctions with other p-type wide bandgap materials lead to light-emitting diodes (LEDs) with better emission and waveguiding properties compared with the homojunction counterparts. Synthesis of the structures with the desired morphology is a key to device applications. In this work, ZnO NW arrays were synthesized using hydrothermal method on ZnO and GaN thin films. Highly crystalline, upright, and ordered arrays of ZnO NWs in the 50 to 250-nm diameter range and 1 μm in length were obtained. The morphology and optical properties of the NWs were studied. Energy dispersive x-ray spectroscopy (EDX) analysis revealed nonstoichiometric oxygen content in the grown ZnO NWs. Photoluminescence (PL) studies depicted the presence of oxygen vacancy and interstitial zinc defects in the grown ZnO NWs, underlining the potential for LEDs. Further, hydrophobically ligated CdSe/ZnS QDs were successfully incorporated to the NW arrays. PL analysis indicated the injection of electrons from photoexcited QDs to the NWs, showing the potential for quantum dot-sensitized solar cells.

  2. A comparison of ZnO films deposited on indium tin oxide and soda lime glass under identical conditions

    SciTech Connect

    Deka, Angshuman; Nanda, Karuna Kar

    2013-06-15

    ZnO films have been grown via a vapour phase transport (VPT) on soda lime glass (SLG) and indium-tin oxide (ITO) coated glass. ZnO film on ITO had traces of Zn and C which gives them a dark appearance while that appears yellowish-white on SLG. X-ray photoelectron spectroscopy studies confirm the traces of C in the form of C-O. The photoluminescence studies reveal a prominent green luminescence band for ZnO film on ITO.

  3. Formation mechanisms of metallic Zn nanodots by using ZnO thin films deposited on n-Si substrates

    SciTech Connect

    Yuk, J. M.; Lee, J. Y.; Kim, Y.; No, Y. S.; Kim, T. W.; Choi, W. K.

    2010-08-09

    High-resolution transmission electron microscopy and energy dispersive x-ray spectroscopy results showed that metallic Zn nanodots (NDs) were fabricated through transformation of ZnO thin films by deposition of SiO{sub x} on ZnO/n-Si (100) heterostructures. The Zn NDs with various sizes and densities were formed due to the occurrence of the mass diffusion of atoms along the grain boundaries in the ZnO thin films. The fabrication mechanisms of metallic Zn NDs through transformation of ZnO thin films deposited on n-Si substrates are described on the basis of the experimental results.

  4. Photoluminescence and photoconductivity studies on amorphous and crystalline ZnO thin films obtained by sol-gel method

    NASA Astrophysics Data System (ADS)

    Valverde-Aguilar, G.; Manríquez Zepeda, J. L.

    2015-03-01

    Amorphous and crystalline ZnO thin films were obtained by the sol-gel process. A precursor solution of ZnO was synthesized by using zinc acetate dehydrate as inorganic precursor at room temperature. The films were spin-coated on silicon and glass wafers and gelled in humid air. The films were calcined at 450 °C for 15 min to produce ZnO nanocrystals with a wurtzite structure. Crystalline ZnO film exhibits an absorption band located at 359 nm (3.4 eV). Photoconductivity technique was used to determine the charge transport mechanism on both kinds of films. Experimental data were fitted with straight lines at darkness and under illumination at 355 and 633 nm wavelengths. This indicates an ohmic behavior. The photovoltaic and photoconductivity parameters were determined from the current density versus the applied electrical field results.

  5. Effect of Sm doping on the physical properties of ZnO thin films deposited by spray pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Velusamy, P.; Babu, R. Ramesh; Aparna, K. T.

    2017-05-01

    Undoped and Sm doped ZnO thin films have been prepared by chemical spray pyrolysis method on a glass substrate at 430°C. The physical properties of undoped and Sm doped ZnO thin films are characterized by XRD, FE-SEM, UV-VIS spectroscopy, Hall measurement and PL analysis. XRD pattern reveals that all the films are polycrystalline nature. The FE-SEM study of CdO shows the smooth and uniform surface with the spherical shaped particle. The electrical study reveals the n-type semiconductor and the optical study shows that Sm doped ZnO thin films about 92% transparency and optical band gap vary between 3.266-3.276 eV. Sm doped ZnO thin films have strong green emission behavior.

  6. Ferromagnetic behaviour of Fe-doped ZnO nanograined films

    PubMed Central

    Protasova, Svetlana G; Mazilkin, Andrei A; Tietze, Thomas; Goering, Eberhard; Schütz, Gisela; Straumal, Petr B; Baretzky, Brigitte

    2013-01-01

    Summary The influence of the grain boundary (GB) specific area s GB on the appearance of ferromagnetism in Fe-doped ZnO has been analysed. A review of numerous research contributions from the literature on the origin of the ferromagnetic behaviour of Fe-doped ZnO is given. An empirical correlation has been found that the value of the specific grain boundary area s GB is the main factor controlling such behaviour. The Fe-doped ZnO becomes ferromagnetic only if it contains enough GBs, i.e., if s GB is higher than a certain threshold value s th = 5 × 104 m2/m3. It corresponds to the effective grain size of about 40 μm assuming a full, dense material and equiaxial grains. Magnetic properties of ZnO dense nanograined thin films doped with iron (0 to 40 atom %) have been investigated. The films were deposited by using the wet chemistry “liquid ceramics” method. The samples demonstrate ferromagnetic behaviour with J s up to 0.10 emu/g (0.025 μB/f.u.ZnO) and coercivity H c ≈ 0.03 T. Saturation magnetisation depends nonmonotonically on the Fe concentration. The dependence on Fe content can be explained by the changes in the structure and contiguity of a ferromagnetic “grain boundary foam” responsible for the magnetic properties of pure and doped ZnO. PMID:23844341

  7. Ferromagnetic behaviour of Fe-doped ZnO nanograined films.

    PubMed

    Straumal, Boris B; Protasova, Svetlana G; Mazilkin, Andrei A; Tietze, Thomas; Goering, Eberhard; Schütz, Gisela; Straumal, Petr B; Baretzky, Brigitte

    2013-01-01

    The influence of the grain boundary (GB) specific area s GB on the appearance of ferromagnetism in Fe-doped ZnO has been analysed. A review of numerous research contributions from the literature on the origin of the ferromagnetic behaviour of Fe-doped ZnO is given. An empirical correlation has been found that the value of the specific grain boundary area s GB is the main factor controlling such behaviour. The Fe-doped ZnO becomes ferromagnetic only if it contains enough GBs, i.e., if s GB is higher than a certain threshold value s th = 5 × 10(4) m(2)/m(3). It corresponds to the effective grain size of about 40 μm assuming a full, dense material and equiaxial grains. Magnetic properties of ZnO dense nanograined thin films doped with iron (0 to 40 atom %) have been investigated. The films were deposited by using the wet chemistry "liquid ceramics" method. The samples demonstrate ferromagnetic behaviour with J s up to 0.10 emu/g (0.025 μB/f.u.ZnO) and coercivity H c ≈ 0.03 T. Saturation magnetisation depends nonmonotonically on the Fe concentration. The dependence on Fe content can be explained by the changes in the structure and contiguity of a ferromagnetic "grain boundary foam" responsible for the magnetic properties of pure and doped ZnO.

  8. Fabrication and characterization of pristine and annealed Ga doped ZnO thin films using sputtering

    SciTech Connect

    Mishra, Abhisek Gouda, Himanshu Sekhar; Mohapatra, Saswat; Singh, Udai P.

    2016-05-06

    ZnO is a wide-band gap, transparent, polar semiconductor with unparalleled optoelectronic, piezoelectric, thermal and transport properties, which make it the material of choice for a wide range of applications such as blue/UV optoelectronics, energy conversion, transparent electronics, spintronic, plasmonic and sensor devices. We report, three sets of Ga doped Zinc Oxide (GZO) were fabricated in different sputtering power (100 watt, 200 watt and 300 watt). Thereafter films were annealed in nitrogen ambient for 30 minutes at 400° C. From the optical absorption spectroscopy it was found that pristine films are showing a 75% transmittance in the visible region of light and it increases after the annealing. However, for 300 W grown sample opposite trend has been achieved for the post annealed sample. X-ray diffraction pattern of all the pristine and annealed films showed a preferable growth orientation at (002) phase. Some other weak peaks were also appeared in different angle which indicates that films are polycrystalline in nature. XRD data also reveals that crystallite size increases with sputtering power up to 200 W and thereafter it decreases with the deposition power. It also noted that the crystallite size of the annealed film increases with compare to the non annealed films. At room temperature an enhancement in electrical properties of Ga doped ZnO thin films was noted for the annealed ZnO films except for the film deposited at 300 watt. More significantly, it was found that annealed thin films showed the resistivity in the range of 10{sup −3} ∼ 10{sup −4} ohm-cm. Such a high optical transmittance and conducting zinc-oxide thin film can be used as a window layer in solar cell.

  9. Fabrication and characterization of pristine and annealed Ga doped ZnO thin films using sputtering

    NASA Astrophysics Data System (ADS)

    Mishra, Abhisek; Mohapatra, Saswat; Gouda, Himanshu Sekhar; Singh, Udai P.

    2016-05-01

    ZnO is a wide-band gap, transparent, polar semiconductor with unparalleled optoelectronic, piezoelectric, thermal and transport properties, which make it the material of choice for a wide range of applications such as blue/UV optoelectronics, energy conversion, transparent electronics, spintronic, plasmonic and sensor devices. We report, three sets of Ga doped Zinc Oxide (GZO) were fabricated in different sputtering power (100 watt, 200 watt and 300 watt). Thereafter films were annealed in nitrogen ambient for 30 minutes at 400° C. From the optical absorption spectroscopy it was found that pristine films are showing a 75% transmittance in the visible region of light and it increases after the annealing. However, for 300 W grown sample opposite trend has been achieved for the post annealed sample. X-ray diffraction pattern of all the pristine and annealed films showed a preferable growth orientation at (002) phase. Some other weak peaks were also appeared in different angle which indicates that films are polycrystalline in nature. XRD data also reveals that crystallite size increases with sputtering power up to 200 W and thereafter it decreases with the deposition power. It also noted that the crystallite size of the annealed film increases with compare to the non annealed films. At room temperature an enhancement in electrical properties of Ga doped ZnO thin films was noted for the annealed ZnO films except for the film deposited at 300 watt. More significantly, it was found that annealed thin films showed the resistivity in the range of 10-3 ˜ 10-4 ohm-cm. Such a high optical transmittance and conducting zinc-oxide thin film can be used as a window layer in solar cell.

  10. Decrease in work function of boron ion-implanted ZnO thin films.

    PubMed

    Heo, Gi-Seok; Hong, Sang-Jin; Park, Jong-Woon; Choi, Bum-Ho; Lee, Jong-Ho; Shin, Dong-Chan

    2007-11-01

    We have fabricated boron ion-implanted ZnO thin films by ion implantation into sputtered ZnO thin films on a glass substrate. An investigation of the effects of ion doses and activation time on the electrical and optical properties of the films has been made. The electrical sheet resistance and resistivity of the implanted films are observed to increase with increasing rapid thermal annealing (RTA) time, while decreasing as the ion dose increases. Without any RTA process, the variation of the carrier density is insensitive to the ion dose. With the RTA process, however, the carrier density of the implanted films increases and approaches that of the un-implanted ZnO film as the ion dose increases. On the other hand, the carrier mobility is shown to decrease with increasing ion doses when no RTA process is applied. With the RTA process, however, there is almost no change in the mobility. We have achieved the optical transmittance as high as 87% within the visible wavelength range up to 800 nm. It is also demonstrated that the work function can be engineered by changing the ion dose during the ion implantation process. We have found that the work function decreases as the ion dose increases.

  11. Effects of a seed layer on the structural properties of RF-sputtered ZnO thin films

    NASA Astrophysics Data System (ADS)

    Ur, Soon-Chul; Yi, Seung-Hwan

    2016-01-01

    Radio-frequency (RF) sputtered deposition combined with sol-gel spin coating has been applied to achieve a high-quality, c-axis-oriented ZnO film. The deposited ZnO films show only a c-axis-oriented ZnO (002) peak. The morphology, structure, and residual stress of the deposited ZnO films are found to depend strongly on the concentration of the precursor. As the concentration of the precursor is increased from 0.1-M to 0.6-M, the residual stress of the ZnO films changes from a compressive (-415 MPa) to a mild tensile (+90 MPa) mode. The deposited ZnO film interestingly shows facets when the concentration of the precursor is 0.6-M. We suggest that the residual stress in sputter-deposited ZnO films can be controlled by using the precursor concentration. This technique is believed to have been used for the first time, and can be applied to control the uniformity during micro speaker fabrication.

  12. Effects of ZnO nanoparticle-coated packaging film on pork meat quality during cold storage.

    PubMed

    Suo, Biao; Li, Huarong; Wang, Yuexia; Li, Zhen; Pan, Zhili; Ai, Zhilu

    2017-05-01

    There has been limited research on the use of ZnO nanoparticle-coated film for the quality preservation of pork meat under low temperature. In the present study, ZnO nanoparticles were mixed with sodium carboxymethyl cellulose (CMC-Na) to form a nanocomposite film, to investigate the effect of ZnO nanoparticle-coated film on pork meat quality and the growth of bacteria during storage under low temperature. When ZnO nanoparticle-coated film was used as the packaging material for pork meat for 14 days of cold storage at 4 °C, the results demonstrated a significant effect on restricting the increases in total volatile basic nitrogen and pH levels, limiting the decreases of lightness (increased L* value) and redness (increased a* value), and maintaining the water-holding capacity compared to the control pork samples (P < 0.05). The present study also discovered that the ZnO nanoparticle-coated film restrained the increase in total plate count (TPC). When Staphylococcus aureus was used as the representative strain, scanning electron microscopy revealed that ZnO nanoparticles increased the occurrence of cell membrane rupture under cold conditions. ZnO nanoparticle-coated film helps retain the quality of pork meat during cold storage by increasing the occurrence of microorganism injury. © 2016 Society of Chemical Industry. © 2016 Society of Chemical Industry.

  13. Effect of Oxidation Condition on Growth of N: ZnO Prepared by Oxidizing Sputtering Zn-N Film.

    PubMed

    Qin, Xuesi; Li, Guojian; Xiao, Lin; Chen, Guozhen; Wang, Kai; Wang, Qiang

    2016-12-01

    Nitrogen-doped zinc oxide (N: ZnO) films have been prepared by oxidizing reactive RF magnetron-sputtering zinc nitride (Zn-N) films. The effect of oxidation temperature and oxidation time on the growth, transmittance, and electrical properties of the film has been explored. The results show that both long oxidation time and high oxidation temperature can obtain the film with a good transmittance (over 80 % for visible and infrared light) and a high carrier concentration. The N: ZnO film exhibits a special growth model with the oxidation time and is first to form a N: ZnO particle on the surface, then to become a N: ZnO layer, and followed by the inside Zn-N segregating to the surface to oxidize N: ZnO. The surface particle oxidized more adequately than the inside. However, the X-ray photoemission spectroscopy results show that the lower N concentration results in the lower N substitution in the O lattice (No). This leads to the formation of n-type N: ZnO and the decrease of carrier concentration. Thus, this method can be used to tune the microstructure, optical transmittance, and electrical properties of the N: ZnO film.

  14. Improvement of Flame-made ZnO Nanoparticulate Thick Film Morphology for Ethanol Sensing

    PubMed Central

    Liewhiran, Chaikarn; Phanichphantandast, Sukon

    2007-01-01

    ZnO nanoparticles were produced by flame spray pyrolysis using zinc naphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%). The particles properties were analyzed by XRD, BET. The ZnO particle size and morphology was observed by SEM and HR-TEM revealing spheroidal, hexagonal, and rod-like morphologies. The crystallite sizes of ZnO spheroidal and hexagonal particles ranged from 10-20 nm. ZnO nanorods were ranged from 10-20 nm in width and 20-50 nm in length. Sensing films were produced by mixing the nanoparticles into an organic paste composed of terpineol and ethyl cellulose as a vehicle binder. The paste was doctor-bladed onto Al2O3 substrates interdigitated with Au electrodes. The morphology of the sensing films was analyzed by optical microscopy and SEM analysis. Cracking of the sensing films during annealing process was improved by varying the heating conditions. The gas sensing of ethanol (25-250 ppm) was studied at 400 °C in dry air containing SiC as the fluidized particles. The oxidation of ethanol on the surface of the semiconductor was confirmed by mass spectroscopy (MS). The effect of micro-cracks was quantitatively accounted for as a provider of extra exposed edges. The sensitivity decreased notably with increasing crack of sensing films. It can be observed that crack widths were reduced with decreasing heating rates. Crack-free of thick (5 μm) ZnO films evidently showed higher sensor signal and faster response times (within seconds) than cracked sensor. The sensor signal increased and the response time decreased with increasing ethanol concentration.

  15. Achieving highly-enhanced UV photoluminescence and its origin in ZnO nanocrystalline films

    NASA Astrophysics Data System (ADS)

    Thapa, Dinesh; Huso, Jesse; Morrison, John L.; Corolewski, Caleb D.; McCluskey, Matthew D.; Bergman, Leah

    2016-08-01

    ZnO is an efficient luminescent material in the UV-range ∼3.4 eV with a wide range of applications in optical technologies. Sputtering is a cost-effective and relatively straightforward growth technique for ZnO films; however, most as-grown films are observed to contain intrinsic defects which can significantly diminish the desirable UV-emission. In this research the defect dynamics and optical properties of ZnO sputtered films were studied via post-growth annealing in Ar or O2 ambient, with X-ray diffraction (XRD), imaging, transmission and Urbach analysis, Raman scattering, and photoluminescence (PL). The imaging, XRD, Raman and Urbach analyses indicate significant improvement in crystal morphology and band-edge characteristics upon annealing, which is nearly independent of the annealing environment. The native defects specific to the as-grown films, which were analyzed via PL, are assigned to Zni related centers that luminesce at 2.8 eV. Their presence is attributed to the nature of the sputtering growth technique, which supports Zn-rich growth conditions. After annealing, in either environment the 2.8 eV center diminished accompanied by morphology improvement, and the desirable UV-PL significantly increased. The O2 ambient was found to introduce nominal Oi centers while the Ar ambient was found to be the ideal environment for the enhancement of the UV-light emission: an enhancement of ∼40 times was achieved. The increase in the UV-PL is attributed to the reduction of Zni-related defects, the presence of which in ZnO provides a competing route to the UV emission. Also, the effect of the annealing was to decrease the compressive stress in the films. Finally, the dominant UV-PL at the cold temperature regime is attributed to luminescent centers not associated with the usual excitons of ZnO, but rather to structural defects.

  16. Residual stress and bending strength of ZnO films deposited on polyimide sheet by RF sputtering system

    SciTech Connect

    Kusaka, Kazuya; Maruoka, Yutaka; Matsue, Tatsuya

    2016-05-15

    Zinc oxide (ZnO) films were deposited on a soft polyimide sheet substrate by radio frequency sputtering with a ZnO powder target, and the films' crystal orientations and residual stress were investigated using x-ray diffraction as a function of substrate temperature. C-axis oriented ZnO films were achieved using this ZnO powder target method. The ZnO films exhibited high compressive residual stresses between −0.7 and −1.4 GPa. Finally, the authors examined the strength of the obtained film by applying tensile bending loads. No cracks were observed on the surfaces of the ZnO films after a bending test using cylinders with diameters >25 mm. After a bending test using a cylinder with a diameter of 19 mm, large cracks were formed on the films. Therefore, the authors concluded that the tensile bending strength of the obtained films was greater than ∼420 MPa.

  17. Electrochemical Synthesis of Highly Oriented, Transparent, and Pinhole-Free ZnO and Al-Doped ZnO Films and Their Use in Heterojunction Solar Cells.

    PubMed

    Kang, Donghyeon; Lee, Dongho; Choi, Kyoung-Shin

    2016-10-04

    Electrochemical synthesis conditions using nonaqueous solutions were developed to prepare highly transparent (T > 90%) and crystalline ZnO and Al-doped ZnO (AZO) films for use in solar energy conversion devices. A focused effort was made to produce pinhole-free films in a reproducible manner by identifying a key condition to prevent the formation of cracks during deposition. The polycrystalline domains in the resulting films had a uniform orientation (i.e., the c-axis perpendicular to the substrate), which enhanced the electron transport properties of the films. Furthermore, electrochemical Al doping of ZnO using nonaqueous media, which was demonstrated for the first time in this study, effectively increased the carrier density and raised the Fermi level of ZnO. These films were coupled with an electrodeposited p-type Cu2O to construct p-n heterojunction solar cells to demonstrate the utilization of these films for solar energy conversion. The resulting n-ZnO/p-Cu2O and n-AZO/p-Cu2O cells showed excellent performance compared with previously reported n-ZnO/p-Cu2O cells prepared by electrodeposition. In particular, replacing ZnO with AZO resulted in simultaneous enhancements in short circuit current and open circuit potential, and the n-AZO/p-Cu2O cell achieved an average power conversion efficiency (η) of 0.92 ± 0.09%. The electrodeposition condition reported here will offer a practical and versatile way to produce ZnO or AZO films, which play key roles in various solar energy conversion devices, with qualities comparable to those prepared by vacuum-based techniques.

  18. Physical properties of fish gelatin-based bio-nanocomposite films incorporated with ZnO nanorods

    PubMed Central

    2013-01-01

    Well-dispersed fish gelatin-based nanocomposites were prepared by adding ZnO nanorods (NRs) as fillers to aqueous gelatin. The effects of ZnO NR fillers on the mechanical, optical, and electrical properties of fish gelatin bio-nanocomposite films were investigated. Results showed an increase in Young's modulus and tensile strength of 42% and 25% for nanocomposites incorporated with 5% ZnO NRs, respectively, compared with unfilled gelatin-based films. UV transmission decreased to zero with the addition of a small amount of ZnO NRs in the biopolymer matrix. X-ray diffraction showed an increase in the intensity of the crystal facets of (10ī1) and (0002) with the addition of ZnO NRs in the biocomposite matrix. The surface topography of the fish gelatin films indicated an increase in surface roughness with increasing ZnO NR concentrations. The conductivity of the films also significantly increased with the addition of ZnO NRs. These results indicated that bio-nanocomposites based on ZnO NRs had great potentials for applications in packaging technology, food preservation, and UV-shielding systems. PMID:23981366

  19. Physical properties of fish gelatin-based bio-nanocomposite films incorporated with ZnO nanorods.

    PubMed

    Rouhi, Jalal; Mahmud, Shahrom; Naderi, Nima; Ooi, Ch Raymond; Mahmood, Mohamad Rusop

    2013-08-27

    Well-dispersed fish gelatin-based nanocomposites were prepared by adding ZnO nanorods (NRs) as fillers to aqueous gelatin. The effects of ZnO NR fillers on the mechanical, optical, and electrical properties of fish gelatin bio-nanocomposite films were investigated. Results showed an increase in Young's modulus and tensile strength of 42% and 25% for nanocomposites incorporated with 5% ZnO NRs, respectively, compared with unfilled gelatin-based films. UV transmission decreased to zero with the addition of a small amount of ZnO NRs in the biopolymer matrix. X-ray diffraction showed an increase in the intensity of the crystal facets of (10ī1) and (0002) with the addition of ZnO NRs in the biocomposite matrix. The surface topography of the fish gelatin films indicated an increase in surface roughness with increasing ZnO NR concentrations. The conductivity of the films also significantly increased with the addition of ZnO NRs. These results indicated that bio-nanocomposites based on ZnO NRs had great potentials for applications in packaging technology, food preservation, and UV-shielding systems.

  20. Local structure investigation of Co doped ZnO thin films prepared by RF sputtering technique

    SciTech Connect

    Yadav, A. K. Jha, S. N.; Bhattacharyya, D.; Haque, S. Maidul; Shukla, D.; Phase, D. M.

    2016-05-23

    Co doped ZnO thin films have been prepared using rf magnetron sputtering technique with varying Co doping concentration. GIXRD has been used to probe long range order and Zn, Co and Oxygen K-edge XAFS measurements have been used for investigating local structure around Zn and Co atoms. GIXRD results show wurzite structure of the samples while XANES and EXAFS results at Zn and Co K edge show that Co is going at Zn site in ZnO matrix and no other phase is present. These results are further confirmed by O K edge and Co L{sub 2,3} edge XANES measurements.

  1. Nanoscale heterogeniety and workfunction variations in ZnO thin films

    NASA Astrophysics Data System (ADS)

    Sharma, Anirudh; Untch, Maria; Quinton, Jamie S.; Berger, Rüdiger; Andersson, Gunther; Lewis, David A.

    2016-02-01

    Nano-roughened, sol-gel derived polycrystalline ZnO thin films prepared by a thermal ramping procedure were found to exhibit different work function values on a sub-micrometer scale. By Kelvin probe force microscopy (KPFM) two distinct nanoscale regions with work function differing by over 0.1 eV were detected which did not coincide with the nano-roughened surface topography. In contrast, a flat ZnO surface displayed a single, uniform distribution. Ultraviolet photoelectron spectroscopy (UPS) studies showed that the average workfunction across a flat ZnO surface was 3.7 eV while ZnO with a nano-roughened morphology had a lower workfunction of 3.4 eV with indications of electronic heterogeneity across the surface, supporting the KPFM results. Scanning Auger Nanoprobe measurements showed that the chemical composition was uniform across the surface in all samples, suggesting the work function heterogeneity was due to variations in crystallinity or crystal orientation on the surface of these thin films. Such heterogeneity in the electronic properties of materials in thin film devices can significantly influence the interfacial charge transport across materials.

  2. Controllable growth and characterization of highly aligned ZnO nanocolumnar thin films

    NASA Astrophysics Data System (ADS)

    Onuk, Zuhal; Rujisamphan, Nopporn; Murray, Roy; Bah, Mohamed; Tomakin, Murat; Shah, S. Ismat

    2017-02-01

    We investigated the effects of growth conditions during magnetron sputtering on the structural, morphological, and optical properties of nanostructured ZnO thin films. Undoped ZnO thin films are deposited onto p-type Si (100) and corning 7059 glass substrates by RF magnetron sputtering using a ZnO target in combination with various Ar-O2 sputtering gas mixtures at room temperature. The effect of the partial pressure of oxygen on the morphology of ZnO thin film structure and band alignment were investigated. Thickness, and therefore the growth rate of the samples measured from the cross-sectional SEM micrographs, is found to be strongly correlated with the oxygen partial pressure in the sputtering chamber. The optical transmittance spectrometry results show that the absorption edge shifts towards the longer wavelength at higher oxygen partial pressure. X-ray photoelectron spectroscopy (XPS) used for determining the surface chemical structure and valence band offsets show that conduction band can be controlled by changing the sputtering atmosphere.

  3. Optical investigations of Be doped ZnO films grown by molecular beam epitaxy

    SciTech Connect

    Chen, Mingming; Zhu, Yuan; Chen, Anqi; Shen, Zhen; Tang, Zikang

    2016-06-15

    Highlights: • The optical properties of Be doped ZnO films were investigated. • Low temperature photoluminescence spectrum was dominated by D°X and DAP emissions. • Shallow acceptor state with ionization energy of 116 meV was found in ZnO:Be films. • It is suggested that the incorporated Be atom might favor formation of Zn vacancies defects. • This work demonstrates that N doping BeZnO might be suitable for fabricating reliable p-type ZnO materials. - Abstract: In this article, the optical properties of ZnO:Be films grown by plasma-assisted molecular beam epitaxy were investigated by the excitation density-dependent and temperature-dependent photoluminescence measurements. The low temperature photoluminescence spectra showed a dominant excitons bound to neutral donors (D°X) emission centered at 3.3540 eV and strong donor-acceptor pair (DAP) transitions at 3.3000 eV. In addition, it showed that the intensity ratio of the DAP and D°X peaks changed with background electron concentration. Furthermore, a shallow acceptor state with ionization energy of 116 meV was found and attributed to Zn vacancy. The present study further suggests that Be and N codoping ZnO might be suitable for fabricating reliable p-type ZnO materials.

  4. Electrode loading effect and high temperature performance of ZnO thin film ultrasonic transducers

    NASA Astrophysics Data System (ADS)

    Zhou, X. S.; Zhang, J.; Hou, R.; Zhao, C.; Kirk, K. J.; Hutson, D.; Hu, P. A.; Peng, S. M.; Zu, X. T.; Fu, Y. Q.

    2014-10-01

    Nanocrystalline ZnO films of 5.8 μm thick were sputter-deposited on ferritic carbon steel plates (25 × 25 × 3 mm3) and characterized for use as ultrasonic transducers at both room temperature and high temperatures. Electrode loading effects have been studied using two types of electrodes, i.e., sputtered Cr/Au (5/50 nm) and silver paste, with electrode diameters 0.7-2.5 mm. Longitudinal and transverse waves were obtained in pulse-echo tests using both types of electrodes. With a silver paste top electrode, a dominant longitudinal mode was obtained, but with a thin Cr/Au film as the top electrode, shear waves were more dominant. Pulse-echo tests of the ZnO transducers were also performed at elevated temperatures up to 450 °C using a carbon paste electrodes. The sputtered ZnO films maintained a stable crystalline structure and orientation at the elevated temperatures, and ZnO devices on ferritic carbon steel could be used successfully up to 400 °C. However, when the temperature was increased further, rapid surface oxidation of the ferritic carbon steel caused the failure of the transducer.

  5. Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates

    NASA Astrophysics Data System (ADS)

    Brochen, Stéphane; Lafossas, Matthieu; Robin, Ivan-Christophe; Ferret, Pierre; Gemain, Frédérique; Pernot, Julien; Feuillet, Guy

    2014-03-01

    ZnO epilayers usually exhibit high n-type residual doping which is one of the reasons behind the difficulties to dope this material p-type. In this work, we aimed at determining the nature of the involved impurities and their potential role as dopant in ZnO thin films grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire and ZnO substrates. In both cases, secondary ion mass spectroscopy (SIMS) measurements give evidence for a strong diffusion of impurities from the substrate to the epilayer, especially for silicon and aluminum. In the case of samples grown on sapphire substrates, aluminum follows Fick's diffusion law on a wide growth temperature range (800-1000°C). Thus, the saturation solubility and the diffusion coefficient of aluminum in ZnO single crystals have been determined. Furthermore, the comparison between SIMS impurity and effective dopant concentrations determined by capacitance-voltage measurements highlights, on one hand a substitutional mechanism for aluminum diffusion, and on the other hand that silicon acts as a donor in ZnO and not as an amphoteric impurity. In addition, photoluminescence spectra exhibit excitonic recombinations at the same energy for aluminum and silicon, indicating that silicon behaves as an hydrogenic donor in ZnO. Based on these experimental observations, ZnO thin films with a controlled n-type doping in the 1016-1019cm-3 range have been carried out. These results show that MOVPE growth is fully compatible with the achievement of highly Al-doped n-type thin films, but also with the growth of materials with low residual doping, which is a crucial parameter to address ZnO p-type doping issues.

  6. CMOS Alcohol Sensor Employing ZnO Nanowire Sensing Films

    NASA Astrophysics Data System (ADS)

    Santra, S.; Ali, S. Z.; Guha, P. K.; Hiralal, P.; Unalan, H. E.; Dalal, S. H.; Covington, J. A.; Milne, W. I.; Gardner, J. W.; Udrea, F.

    2009-05-01

    This paper reports on the utilization of zinc oxide nanowires (ZnO NWs) on a silicon on insulator (SOI) CMOS micro-hotplate for use as an alcohol sensor. The device was designed in Cadence and fabricated in a 1.0 μm SOI CMOS process at XFAB (Germany). The basic resistive gas sensor comprises of a metal micro-heater (made of aluminum) embedded in an ultra-thin membrane. Gold plated aluminum electrodes, formed of the top metal, are used for contacting with the sensing material. This design allows high operating temperatures with low power consumption. The membrane was formed by using deep reactive ion etching. ZnO NWs were grown on SOI CMOS substrates by a simple and low-cost hydrothermal method. A few nanometer of ZnO seed layer was first sputtered on the chips, using a metal mask, and then the chips were dipped in a zinc nitrate hexahydrate and hexamethylenetramine solution at 90° C to grow ZnO NWs. The chemical sensitivity of the on-chip NWs were studied in the presence of ethanol (C2H5OH) vapour (with 10% relative humidity) at two different temperatures: 200 and 250° C (the corresponding power consumptions are only 18 and 22 mW). The concentrations of ethanol vapour were varied from 175-1484 ppm (pers per million) and the maximum response was observed 40% (change in resistance in %) at 786 ppm at 250° C. These preliminary measurements showed that the on-chip deposited ZnO NWs could be a promising material for a CMOS based ethanol sensor.

  7. Properties of boron-doped ZnO thin films grown by using MOCVD

    NASA Astrophysics Data System (ADS)

    Choi, In-Hwan

    2013-11-01

    Boron-doped ZnO thin films were prepared by using metal organic chemical-vapor deposition (MOCVD) with diethyl zinc and water as precursors and B2H6 as the dopant gas. The effects of the flow rates of H2O and B2H6 on the growth and the electrical properties of boron-doped ZnO thin film were investigated. The maximum carrier concentration and mobility and the minimum resistivity obtained under these experimental conditions were 7 × 1020 /cm3, 42 cm2 /V·sec and 4 × 10-4 Ω·cm, respectively, at room temperature. The electrical properties, growth rates, transmittances, and surface morphologies of the ZnO:B films grown using MOCVD are strongly affected by growth conditions such as the relative flow rates of the precursors and dopant gases and the chamber pressure, and these effects are discussed in detail in this article.

  8. The formation of anomalous Hall effect depending on W atoms in ZnO thin films

    NASA Astrophysics Data System (ADS)

    Can, Musa Mutlu; Shah, S. Ismat; Fırat, Tezer

    2014-06-01

    This article investigates the effects of intrinsic point defects and extrinsic W atoms on magneto electrical properties in the ZnO lattice. The analyses were accomplished for ∼0.5% W including ZnO thin films, grown using a radio frequency (RF) magnetron sputtering system. The polarized spin current dependent magnetic formation was investigated by longitudinal and transverse magneto electrical measurements in a temperature range of 5 K to 300 K. The positive magneto resistivity (PMR) ratios reached 28.8%, 12.7%, and 17.6% at 5 K for thin films, having different post-deposition annealing conditions as a consequence of ionic W dependent defects in the lattice. Furthermore, an anomalous Hall effect, originating from polarized spin currents, was understood from the split in Hall resistance versus magnetic field (Rxy(H)) curves for the thin film with high amount of Zn2+ and W6+ ionic defects.

  9. Interplay between chemical state, electric properties, and ferromagnetism in Fe-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Chen, G.; Peng, J. J.; Song, C.; Zeng, F.; Pan, F.

    2013-03-01

    Valence state of Fe ions plays an important role in the physical properties of Fe doped ZnO films. Here, a series of Zn1-xFexO films with different Fe concentrations (x = 0, 2.3, 5.4, 7.1, and 9.3 at. %) were prepared to investigate their structural, piezoelectric, ferroelectric, bipolar resistive switching properties, and electrical-control of ferromagnetism at room temperature. The structure characterizations indicate that the chemical state of Fe ions substituting Zn2+ site changes from Fe3+ to Fe2+ with the increase of Fe dopant concentration. We found enhanced piezoelectric and ferroelectric properties in Zn0.977Fe0.023O films with more Fe3+ due to the smaller Fe3+ ionic size in comparison with Zn2+ while the increase of Fe2+ concentration by a larger amount of Fe dopant results in the worse ferroelectric and piezoelectric performance. All Pt/Zn1-xFexO/Pt devices show bipolar resistive switching properties. Especially, devices with lower Fe dopant concentration exhibit better endurance properties due to their higher crystalline quality. The variation of oxygen vacancies during resistive switching provides an opportunity to tune ferromagnetism of Fe-doped ZnO films, giving rise to the integration of charge and spin into a simple Pt/Zn1-xFexO/Pt devices. The multifunctional properties of Fe-doped ZnO films are promising for communication systems and information storage devices.

  10. Electron transport in Al-Cu co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Serin, T.; Atilgan, A.; Kara, I.; Yildiz, A.

    2017-03-01

    To investigate the influence of varying Al content on structural, optical, and electrical properties of ZnO thin films, Al-Cu co-doped ZnO thin films with fixed Cu content at 1 wt. % and different Al contents (1, 3, and 5 wt. %) were successfully synthesized on glass substrates using a sol-gel process. The results indicated that the varying Al content affects not only the grain size and band gap but also the electrical conductivity of the films, and a linear relationship was found between the band gap and strain values of the films. The temperature-dependent electrical conductivity data of the films demonstrated that electron transport was mainly controlled by the grain boundaries at intermediate and high temperatures, whereas it was governed by Mott-variable range hopping at low temperatures. Additionally, 3 wt. % Al content improved the electrical conductivity of Al-Cu co-doped ZnO by lowering the trap density and enhancing the hopping probability.

  11. Preparation and characterization of ALD deposited ZnO thin films studied for gas sensors

    NASA Astrophysics Data System (ADS)

    Boyadjiev, S. I.; Georgieva, V.; Yordanov, R.; Raicheva, Z.; Szilágyi, I. M.

    2016-11-01

    Applying atomic layer deposition (ALD), very thin zinc oxide (ZnO) films were deposited on quartz resonators, and their gas sensing properties were studied using the quartz crystal microbalance (QCM) method. The gas sensing of the ZnO films to NO2 was tested in the concentration interval between 10 and 5000 ppm. On the basis of registered frequency change of the QCM, for each concentration the sorbed mass was calculated. Further characterization of the films was carried out by various techniques, i.e. by SEM-EDS, XRD, ellipsometry, and FTIR spectroscopy. Although being very thin, the films were gas sensitive to NO2 already at room temperature and could register very well as low concentrations as 100 ppm, while the sorption was fully reversible. Our results for very thin ALD ZnO films show that the described fast, simple and cost-effective technology could be implemented for producing gas sensors working at room temperature and being capable to detect in real time low concentrations of NO2.

  12. Enhanced photoelectrochemical and optical performance of ZnO films tuned by Cr doping

    NASA Astrophysics Data System (ADS)

    Salem, M.; Akir, S.; Massoudi, I.; Litaiem, Y.; Gaidi, M.; Khirouni, K.

    2017-04-01

    In this paper, pure and Cr-doped nanostructured Zinc oxide thin films were synthesized by simple and low cost co-precipitation and spin-coating method with Cr concentration varying between 0.5 and 5 at.%. Crystalline structure of the prepared films was investigated by X-ray diffraction (XRD) and Raman spectroscopy techniques. XRD analysis indicated that the films were indexed as the hexagonal phase of wurtzite-type structure and demonstrated a decrease in the crystallite size with increasing Cr doping content. Cr doping revealed a significant effect on the optical measurements such as transmission and photoluminescence properties. The optical measurements indicated that Cr doping decreases the optical band gap and it has been shifted from 3.41 eV for pure ZnO film to 3.31 eV for 5 at.% Cr-doped one. The photoelectrochemical (PEC) sensing characteristics of Cr-doped ZnO layers were investigated. Amongst all photo-anodes with different Cr dopant concentration, the 2 at.% Cr incorporated ZnO films exhibited fast response and higher photoconduction sensitivity.

  13. Raman scattering studies of p-type Sb-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Samanta, Kousik; Bhattacharya, Pijush; Katiyar, Ram S.

    2010-12-01

    Antimony doped p-type ZnO films were grown on Al2O3 (0001) substrate by pulsed laser deposition. The structural properties of Zn1-xSbxO (3% and 5%) thin films were investigated by Raman scattering studies. The softening of local lattice due to the formation of (SbZn-2VZn) acceptor complexes was detected as the shift in E2high mode toward lower frequency side in ZnSbO thin films. Additional optical modes observed at 277, 333, 483, and 534 cm-1 are due to the breaking of translational symmetry in w-ZnO by Sb doping. The Zn-Sb related local vibrational mode was detected around 237 cm-1 in 5% Sb doped ZnO thin film. Room temperature Hall measurements exhibited low resistivity of 0.017 Ω cm, high hole concentration of 6.25×1018 cm-3, and mobility of 57.44 cm2/V s in the 5% Sb-doped ZnO thin film.

  14. Room-temperature larger-scale highly ordered nanorod imprints of ZnO film.

    PubMed

    Kyaw, Zabu; Jianxiong, Wang; Dev, Kapil; Tan, Swee Tiam; Ju, Zhengang; Zhang, Zi-Hui; Ji, Yun; Hasanov, Namig; Liu, Wei; Sun, Xiao Wei; Demir, Hilmi Volkan

    2013-11-04

    Room-temperature large-scale highly ordered nanorod-patterned ZnO films directly integrated on III-nitride light-emitting diodes (LEDs) are proposed and demonstrated via low-cost modified nanoimprinting, avoiding a high-temperature process. with a 600 nm pitch on top of a critical 200 nm thick Imprinting ZnO nanorods of 200 nm in diameter and 200 nm in height continuous ZnO wetting layer, the light output power of the resulting integrated ZnO-nanorod-film/semi-transparent metal/GaN/InGaN LED shows a two-fold enhancement (100% light extraction efficiency improvement) at the injection current of 150 mA, in comparison with the conventional LED without the imprint film. The increased optical output is well explained by the enhanced light scattering and outcoupling of the ZnO-rod structures along with the wetting film, as verified by the numerical simulations. The wetting layer is found to be essential for better impedance matching. The current-voltage characteristics and electroluminescence measurements confirm that there is no noticeable change in the electrical or spectral properties of the final LEDs after ZnO-nanorod film integration. These results suggest that the low-cost high-quality large-scale ZnO-nanorod imprints hold great promise for superior LED light extraction.

  15. ZnO and MgZnO Nanocrystalline Flexible Films: Optical and Material Properties

    DOE PAGES

    Huso, Jesse; Morrison, John L.; Che, Hui; ...

    2011-01-01

    An emore » merging material for flexible UV applications is Mg x Zn 1 − x O which is capable of tunable bandgap and luminescence in the UV range of ~3.4 eV–7.4 eV depending on the composition x . Studies on the optical and material characteristics of ZnO and Mg 0.3 Zn 0.7 O nanocrystalline flexible films are presented. The analysis indicates that the ZnO and Mg 0.3 Zn 0.7 O have bandgaps of 3.34 eV and 4.02 eV, respectively. The photoluminescence (PL) of the ZnO film was found to exhibit a structural defect-related emission at ~3.316 eV inherent to the nanocrystalline morphology. The PL of the Mg 0.3 Zn 0.7 O film exhibits two broad peaks at 3.38 eV and at 3.95 eV that are discussed in terms of the solubility limit of the ZnO-MgO alloy system. Additionally, external deformation of the film did not have a significant impact on its properties as indicated by the Raman LO-mode behavior, making these films attractive for UV flexible applications.« less

  16. Effect of copper doping on the photocatalytic activity of ZnO thin films prepared by sol-gel method

    NASA Astrophysics Data System (ADS)

    Saidani, T.; Zaabat, M.; Aida, M. S.; Boudine, B.

    2015-12-01

    In the present work, we prepared undoped and copper doped ZnO thin films by the sol-gel dip coating method on glass substrates from zinc acetate dissolved in a solution of ethanol. The objective of our work is to study the effect of Cu doping with different concentrations on structural, morphological, optical properties and photocatalytic activity of ZnO thin films. For this purpose, we have used XRD to study the structural properties, and AFM to determine the morphology of the surface of the ZnO thin films. The optical properties and the photocatalytic degradation of the films were examined by UV-visibles spectrophotometer. The Tauc method was used to estimate the optical band gap. The XRD spectra indicated that the films have an hexagonal wurtzite structure, which gradually deteriorated with increasing Cu concentration. The results showed that the incorporation of Cu decreases the crystallite size. The AFM study showed that an increase of the concentration of Cu causes the decrease of the surface roughness, which passes from 20.2 for Un-doped ZnO to 12.16 nm for doped ZnO 5 wt% Cu. Optical measurements have shown that all the deposited films show good optical transmittance (77%-92%) in the visible region and increases the optical gap with increasing Cu concentration. The presence of copper from 1% to 5 wt% in the ZnO thin films is found to decelerate the photocatalytic process.

  17. Effect of aluminium doping on structural and optical properties of ZnO thin films by sol-gel method

    SciTech Connect

    Vijayaprasath, G.; Murugan, R.; Ravi, G. E-mail: gravicrc@gmail.com; Hayakawa, Y.

    2015-06-24

    We systematically investigated the structural, morphological and optical properties of 0.05 mol % Al doped ZnO (Al:ZnO) thin films deposited on glass substrates by sol-gel spin coating method. The influences of Al doping in ZnO thin films are characterized by Powder X-ray diffraction study. ZnO and Al:ZnO thin films have showed hexagonal wurtzite structure without any secondary phase in c-axis (002) orientation. The SEM images also proved the hexagonal rod like morphologies for both films. All the films exhibited transmittance of 70-80% in the visible range up to 800 nm and cut-off wavelength observed at ∼390 nm corresponding to the fundamental absorption of ZnO. The band gap of the ZnO thin films slightly widened with the Al doping. The photoluminescence properties have been studied for Al: ZnO thin films and the results are presented in detail.

  18. Improvement in LPG sensing response by surface activation of ZnO thick films with Cr2O3

    NASA Astrophysics Data System (ADS)

    Hastir, Anita; Virpal, Kaur, Jasmeet; Singh, Gurpreet; Kohli, Nipin; Singh, Onkar; Singh, Ravi Chand

    2015-05-01

    Liquefied Petroleum Gas (LPG) sensing response of pure and Cr2O3 activated ZnO has been investigated in this study. Zinc oxide was synthesized by co-precipitation route and deposited as a thick film on an alumina substrate. The surface of ZnO sensor was activated by chromium oxide on surface oxidation by chromium chloride. The concentration of chromium chloride solution used to activate the ZnO sensor surface has been varied from 0 to 5 %. It is observed that response to LPG has improved as compared to pure ZnO.

  19. Facile synthesis of three dimensional porous ZnO films with mesoporous walls and gas sensing properties

    SciTech Connect

    Yu, Ling-min Guo, Fen; Liu, Zong-yuan; Liu, Sheng; Yang, Bing; Yin, Ming-Li; Fan, Xin-hui

    2016-02-15

    Controllable synthesis of 3-D mesoporous ZnO films is highly desirable for gas sensor application. Herein, we report a facile preparation of 3-D mesoporous ZnO film on Ag interdigitated electrodes substrate. The as-prepared ZnO film has a mesoporous walls ranging from 2–5 nm, as revealed by XRD, SEM, and TEM. Importantly, the as-prepared 3-D ZnO film shows an excellent ethanol gas sensing. - Graphical abstract: The detailed electron microscopy studies indicated that the as grown ZnO nanowalls exhibited a mesoporous structure composed of numerous tiny single crystals nanoparticles with an average size of 5 nm. One important issue for the application of the porous material was the specific surface area. - Highlights: • Novel three dimensional porous ZnO films with mesoporous walls were synthesized via a facile solution method. • The mesoporous ZnO nanowalls showed a high sensitivity (36.67) to 200 ppm ethanol at 285 °C. • The reason of their superior response time and changing amplitude was discussed.

  20. The effect of heat treatment on the physical properties of sol-gel derived ZnO thin films

    NASA Astrophysics Data System (ADS)

    Raoufi, Davood; Raoufi, Taha

    2009-03-01

    Zinc oxide (ZnO) thin films were deposited on microscope glass substrates by sol-gel spin coating method. Zinc acetate (ZnAc) dehydrate was used as the starting salt material source. A homogeneous and stable solution was prepared by dissolving ZnAc in the solution of monoethanolamine (MEA). ZnO thin films were obtained after preheating the spin coated thin films at 250 °C for 5 min after each coating. The films, after the deposition of the eighth layer, were annealed in air at temperatures of 300 °C, 400 °C and 500 °C for 1 h. The effect of thermal annealing in air on the physical properties of the sol-gel derived ZnO thin films are studied. The powder and its thin film were characterized by X-ray diffractometer (XRD) method. XRD analysis revealed that the annealed ZnO thin films consist of single phase ZnO with wurtzite structure (JCPDS 36-1451) and show the c-axis grain orientation. Increasing annealing temperature increased the c-axis orientation and the crystallite size of the film. The annealed films are highly transparent with average transmission exceeding 80% in the visible range (400-700 nm). The measured optical band gap values of the ZnO thin films were between 3.26 eV and 3.28 eV, which were in the range of band gap values of intrinsic ZnO (3.2-3.3 eV). SEM analysis of annealed thin films has shown a completely different surface morphology behavior.

  1. [Stimulated emission characteristics of ZnO thin films deposited by magnetron sputtering on SiO2 substrates].

    PubMed

    Jing, Wang; Xi-qing, Zhang; Xiao-ying, Teng; De-ping, Xiong; Peng, Lin; Li, Wang; Shi-hua, Huang

    2004-07-01

    ZnO thin films were deposited by magnetron sputtering on SiQ2 substrates. The temperature dependence of the absorption spectra and the photoluminescence spectra was studied for ZnO thin film. The absorption of the longitudinal optical (LO) phonons and the free-excitons was observed at room temperature. The free-exciton emission was only observed in PL spectra at room temperature, the results indicate that ZnO thin films have excellent quality and low density of defects. The stimulated emission properties of ZnO thin films were investigated. When excitation intensity is above threshold, the FWHM o f stimulated emission peak increases and stimulated emission peak shows red shift with increasing excitation intensity. Our analysis shows that the optical gain is due to electronhole plasma emission.

  2. Influence of growth temperature of TiO 2 buffer on structure and PL properties of ZnO films

    NASA Astrophysics Data System (ADS)

    Zhang, Weiying; Zhao, Jianguo; Liu, Zhenzhong; Liu, Zhaojun; Fu, Zhuxi

    2010-05-01

    A series of ZnO films with TiO 2 buffer on Si (1 0 0) substrates were prepared by DC reactive sputtering. Growth temperature of TiO 2 buffer changed from 100 °C to 400 °C, and the influence on the crystal structures and optical properties of ZnO films have been investigated. The XRD results show that the ZnO films with TiO 2 buffer have a hexagonal wurtzite structure with random orientation, and with the increase of growth temperature of TiO 2 buffer, the residual stresses were released gradually. Specially, the UV emission enhanced distinctly and FWHMs (full width half maximum) decreased linearly with the increasing TiO 2 growth temperature. The results all come from the improvement of crystal quality of ZnO films.

  3. Substrate Temperature Effects on Room Temperature Sensing Properties of Nanostructured ZnO Thin Films.

    PubMed

    Reddy, Jonnala Rakesh; Mani, Ganesh Kumar; Shankar, Prabakaran; Rayappan, John Bosco Balaguru

    2016-01-01

    Zinc oxide (ZnO) thin films were deposited on glass substrates using chemical spray pyrolysis technique at different substrate temperatures such as 523, 623 and 723 K. X-ray diffraction (XRD) patterns confirmed the formation of polycrystalline films with hexagonal wurtzite crystal structure and revealed the change in preferential orientation of the crystal planes. Scanning electron micrographs showed the formation of uniformly distributed spherical shaped grains at low deposition temperature and pebbles like structure at the higher temperature. Transmittance of 85% was observed for the film deposited at 723 K. The band gap of the films was found to be increased from 3.15 to 3.23 eV with a rise in deposition temperature. The electrical conductivity of the films was found to be improved with an increase in substrate temperature. Surface of ZnO thin films deposited at 523 K, 623 K and 723 K were found to be hydrophobic with the contact angles of 92°, 105° and 128° respectively. The room temperature gas sensing characteristics of all the films were studied and found that the film deposited at 623 K showed a better response towards ammonia vapour.

  4. Gd doping effect on structural, electrical and magnetic properties of ZnO thin films synthesized by sol-gel spin coating technique

    NASA Astrophysics Data System (ADS)

    Kumar, Sanjeev; Thangavel, Rajalingam

    2017-03-01

    Nanocrystalline Gd-doped ZnO thin films were deposited on sapphire (0001) substrates using sol-gel spin coating technique. The structural and optical properties of deposited thin films were characterized by X-ray diffraction (XRD) and micro Raman spectroscopy. Structural and optical studies show that the doped Gd ions occupy Zn sites retaining the wurtzite symmetry. Photoluminescence (PL) studies reveal the presence of oxygen vacancies in Gd doped ZnO thin films. The resistivity of Gd doped ZnO thin film decreases with increase in Gd doping upto 4%. Gd-doped ZnO films demonstrate weak magnetic ordering at room temperature.

  5. Heteroepitaxial ZnO films on diamond: Optoelectronic properties and the role of interface polarity

    SciTech Connect

    Schuster, Fabian Hetzl, Martin; Garrido, Jose A.; Stutzmann, Martin; Magén, Cesar; Arbiol, Jordi

    2014-06-07

    We demonstrate the growth of heteroepitaxial ZnO films on (110) diamond substrates by molecular beam epitaxy and report on a major advance in structural quality, as confirmed by XRD and high-resolution TEM measurements. The growth direction is found to be along the polar c-axis with Zn-polarity, deduced from annular bright-field scanning transmission electron microscopy imaging. This is important information, as simulations of the electronic band structure reveal the ZnO polarity to dominate the electronic structure of the interface: the formation of a two-dimensional electron gas on the ZnO side or a two-dimensional hole gas on the diamond side are predicted for Zn- and O-polarity, respectively. In addition, photoluminescence and absorption studies exhibit good optical properties and reveal stimulated emission for optical excitation above a threshold of 30 kW/cm{sup 2}.

  6. Enhanced luminescence in Eu-doped ZnO nanocrystalline films

    SciTech Connect

    Suzuki, Keigo Murayama, Koji; Tanaka, Nobuhiko

    2015-07-20

    We found an enhancement of Eu{sup 3+} emissions in Eu-doped ZnO nanocrystalline films fabricated by microemulsion method. The Eu{sup 3+} emission intensities were increased by reducing annealing temperatures from 633 K to 533 K. One possible explanation for this phenomenon is that the size reduction enhances the energy transfer from ZnO nanoparticles to Eu{sup 3+} ions. Also, the shift of the charge-transfer band into the low-energy side of the absorption edge is found to be crucial, which seems to expedite the energy transfer from O atoms to Eu{sup 3+} ions. These findings will be useful for the material design of Eu-doped ZnO phosphors.

  7. Effect of thermal annealing on properties of polycrystalline ZnO thin films

    NASA Astrophysics Data System (ADS)

    Gritsenko, L. V.; Abdullin, Kh. A.; Gabdullin, M. T.; Kalkozova, Zh. K.; Kumekov, S. E.; Mukash, Zh. O.; Sazonov, A. Yu.; Terukov, E. I.

    2017-01-01

    Electrical properties (density, carriers mobility, resistivity), optical absorption and photoluminescence spectra of ZnO, grown by MOCVD and hydrothermal methods, have been investigated depending on the annealing and treatment modes in a hydrogen plasma. It has been shown that the electrical and photoluminescent (PL) properties of ZnO are strongly dependent on gas atmosphere during annealing. The annealing in oxygen atmosphere causes a sharp drop of carrier mobility and films conductivity due to the absorption of oxygen on grain boundaries. The process of ZnO electrical properties recovery by the thermal annealing in inert atmosphere (nitrogen), in oil (2×10-2 mbar) and oil-free (1×10-5 mbar) vacuum has been investigated. The hydrogen plasma treatment influence on the intensity of near-band-gap emission (NBE) has been studied. The effect of annealing and subsequent plasma treatment on PL intensity depends on the gas atmosphere of preliminary thermal annealing.

  8. Structural and Optical Characterization of ZnO Nanoparticles Thin Film via Oxidizing Zn in Ethanol

    NASA Astrophysics Data System (ADS)

    Ooi, M. D. Johan; Aziz, A. Abdul; Abdullah, M. J.

    2010-07-01

    In this work, a study on structural and optical properties of ZnO nanoparticles thin film synthesized by decomposing zinc powder with iodine in absolute ethanol on p- type Si (111) have been carried out. Diameter of about 20 to 90 nm in size was observed during 3 minutes heat treatment deposited at 1150 °C. The structural properties of ZnO nanoparticles for different reaction time (1, 3 and 5 hours) were studied by X-Ray Diffraction (XRD) and Transmission Electron Microscope (TEM) whereas the optical property was observed using room temperature photoluminescence (PL) spectroscopy. The synthesized ZnO nanoparticles show a strong single UV emission peak at 378 nm.

  9. Electrical characteristics of ZnO nanorods reinforced polymer nanocomposite thin films

    SciTech Connect

    Bhattacharjee, Snigdha; Roy, Asim

    2015-05-15

    ZnO nanorods have been prepared by simple chemical method, which is used to fabricate organic bistable devices (OBDs). OBDs are fabricated by incorporating different weight percent (wt %) of chemically synthesized Zinc Oxide (ZnO) nanorods into polymethylmethacrylate (PMMA). Current-voltage (I-V) measurements of the spin coated ZnO+PMMA nanocomopsite thin film on indium tin oxide (ITO) coated glass substrate showed current hysteresis behaviour, which is an indication of memory effect. The samples exhibit two distinct resistance states, ON and OFF states, characterised by relatively low and high resistance of the OBDs, respectively. It is also observed that with change in ZnO dopant concentration the value of ON/OFF current changes. Higher ON/OFF current ratio is desired for practical applications. Current conduction mechanism of the devices has been explained invoking various existing models, and it has been found that the trapped-charge-limited conduction mechanism was dominant in our samples.

  10. Photoluminescence and extinction enhancement from ZnO films embedded with Ag nanoparticles

    NASA Astrophysics Data System (ADS)

    Liu, M.; Qu, S. W.; Yu, W. W.; Bao, S. Y.; Ma, C. Y.; Zhang, Q. Y.; He, J.; Jiang, J. C.; Meletis, E. I.; Chen, C. L.

    2010-12-01

    ZnO films embedded with Ag nanoparticles are deposited at 750 °C with a reactive radio-frequency magnetron sputtering. The films are found to have a large enhancement in the intensity of photoluminescence emission and in the extinction of incident light. The enhancement is assigned to be from the interaction between the localized surface plasmons in the Ag nanoparticels and the light. The surface plasmons in the films can be excited in a wide range, from ultraviolet to near infrared wavelength of light.

  11. The conductive property of ZnO QDs-SiO2 and ZnO QDs-SiO(x)N(y) nanocomposite films.

    PubMed

    Peng, Yu-Yun; Hsieh, Tsung-Eong; Hsu, Chia-Hung

    2009-08-01

    The dc and ac conductive properties of ZnO QDs-SiO2 and ZnO QDs-SiO(x)N(y) nancomposite films prepared by the target-attached sputtering method are investigated. Both two nanocomposite samples reveal a typical characteristic of a metal-oxide varistor (MOV) on the J-E plots with distinct threshold electric fields (E(th)) which are affected by the molecular bonding configurations in the matrix and at the dot/matrix interfaces. The two systems exhibit dissimilar dependences of dc conductivity (sigma(dc)) on the ZnO content, revealing the limitation of conventional percolation models in which the surface interaction term is usually ignored. The ac conduction behaviors of the two nanocomposite systems were also analyzed and their percolation concentrations V(c) (22.75% for ZnO QDs-SiO2 and 20.78% for ZnO QDs-SiO(x)N(y)) are determined by the construction of master curves. Analytical results illustrated that the dielectric matrix type indeed affects the defect configuration and transport behaviors inside ZnO dots. Hence, manipulation of dielectric matrix type can possibly achieve various optical and electrical properties in ZnO QDs-dielectric nanocomposite systems.

  12. Photoluminescence enhancement of ZnO via coupling with surface plasmons on Al thin films

    NASA Astrophysics Data System (ADS)

    Dellis, S.; Kalfagiannis, N.; Kassavetis, S.; Bazioti, C.; Dimitrakopulos, G. P.; Koutsogeorgis, D. C.; Patsalas, P.

    2017-03-01

    We present that the ultra-violet emission of ZnO can be enhanced, as much as six-times its integral intensity, using an Al thin interlayer film between the Si substrate and ZnO thin film and a post-fabrication laser annealing process. The laser annealing is a cold process that preserves the chemical state and integrity of the underlying aluminum layer, while it is essential for the improvement of the ZnO performance as a light emitter and leads to enhanced emission in the visible and in the ultraviolet spectral ranges. In all cases, the metal interlayer enhances the intensity of the emitted light, either through coupling of the surface plasmon that is excited at the Al/ZnO interface, in the case of light-emitting ZnO in the ultraviolet region, or by the increased back reflection from the Al layer, in the case of the visible emission. In order to evaluate the process and develop a solid understanding of the relevant physical phenomena, we investigated the effects of various metals as interlayers (Al, Ag, and Au), the metal interlayer thickness, and the incorporation of a dielectric spacer layer between Al and ZnO. Based on these experiments, Al emerged as the undisputable best choice of metal interlayers because of its compatibility with the laser annealing process, as well as due to its high optical reflectivity at 380 and 248 nm, which leads to the effective coupling with surface plasmons at the Al/ZnO interfaces at 380 nm and the secondary annealing of ZnO by the back-reflected 248 nm laser beam.

  13. Microfluidic pumps employing surface acoustic waves generated in ZnO thin films

    SciTech Connect

    Du, X. Y.; Flewitt, A. J.; Milne, W. I.; Fu, Y. Q.; Luo, J. K.

    2009-01-15

    ZnO thin film based surface acoustic wave (SAW) devices have been utilized to fabricate microfluidic pumps. The SAW devices were fabricated on nanocrystalline ZnO piezoelectric thin films deposited on Si substrates using rf magnetron sputtering and use a Sezawa wave mode for effective droplet motion. The as-deposited ZnO surface is hydrophilic, with a water contact angle of {approx}75 deg., which prevents droplet pumping. Therefore, the ZnO surface was coated using a self-assembled monolayer of octadecyltrichlorosilane which forms a hydrophobic surface with a water contact angle of {approx}110 deg. Liquid droplets between 0.5 and 1 {mu}l in volume were successfully pumped on the hydrophobic ZnO surface at velocities up to 1 cm s{sup -1}. Under acoustic pressure, the water droplet on an hydrophilic surface becomes deformed, and the asymmetry in the contact angle at the trailing and leading edges allow the force acting upon the droplet to be calculated. These forces, which increase with input voltage above a threshold level, are found to be in the range of {approx}100 {mu}N. A pulsed rf signal has also been used to demonstrate precision manipulation of the liquid droplets. Furthermore, a SAW device structure is demonstrated in which the ZnO piezoelectric only exists under the input and output transducers. This structure still permits pumping, while avoiding direct contact between the piezoelectric material and the fluid. This is of particular importance for biological laboratory-on-a-chip applications.

  14. Structural and optical properties of Ni added ZnO thin films deposited by sol-gel method

    NASA Astrophysics Data System (ADS)

    Murugan, R.; Vijayaprasath, G.; Mahalingam, T.; Anandhan, N.; Ravi, G.

    2014-04-01

    Pure and Ni added zinc oxide thin films were prepared by sol-gel method using spin-coating technique on glass substrates. The influences of nickel on ZnO thin films are characterized by Powder X-ray diffraction study. Pure and Ni added thin films are hexagonal wurtzite structure without any secondary phase in c-axis orientation. The SEM images of thin films show uniform sphere like particles covered completely on glass substrates. All the films exhibit transmittance of 85-95% in the visible range up to 800nm and cut-off wavelength observed at 394 nm corresponding to the fundamental absorption of ZnO. The photoluminescence property for pure and Ni added ZnO thin films has been studied and results are presented in detail.

  15. Preparation of dye-adsorbing ZnO thin films by electroless deposition and their photoelectrochemical properties.

    PubMed

    Nagaya, Satoshi; Nishikiori, Hiromasa

    2013-09-25

    Dye-adsorbing ZnO thin films were prepared on ITO films by electroless deposition. The films were formed in an aqueous solution containing zinc nitrate, dimethylamine-borane, and eosin Y at 328 K. The film thickness was 1.2-2.0 μm. Thinner and larger-plane hexagonal columns were produced from the solution containing a higher concentration of eosin Y. A photocurrent was observed in the electrodes containing such ZnO films during light irradiation. The photoelectrochemical performance of the film was improved by increasing the concentration of eosin Y because of increases in the amount of absorbed photons and the electronic conductivity of ZnO.

  16. Structural and optical properties of Ni added ZnO thin films deposited by sol-gel method

    SciTech Connect

    Murugan, R.; Vijayaprasath, G.; Anandhan, N. E-mail: gravicrc@gmail.com; Ravi, G. E-mail: gravicrc@gmail.com; Mahalingam, T.

    2014-04-24

    Pure and Ni added zinc oxide thin films were prepared by sol-gel method using spin-coating technique on glass substrates. The influences of nickel on ZnO thin films are characterized by Powder X-ray diffraction study. Pure and Ni added thin films are hexagonal wurtzite structure without any secondary phase in c-axis orientation. The SEM images of thin films show uniform sphere like particles covered completely on glass substrates. All the films exhibit transmittance of 85-95% in the visible range up to 800nm and cut-off wavelength observed at 394 nm corresponding to the fundamental absorption of ZnO. The photoluminescence property for pure and Ni added ZnO thin films has been studied and results are presented in detail.

  17. ZnO thin film piezoelectric MEMS vibration energy harvesters with two piezoelectric elements for higher output performance.

    PubMed

    Wang, Peihong; Du, Hejun

    2015-07-01

    Zinc oxide (ZnO) thin film piezoelectric microelectromechanical systems (MEMS) based vibration energy harvesters with two different designs are presented. These harvesters consist of a silicon cantilever, a silicon proof mass, and a ZnO piezoelectric layer. Design I has a large ZnO piezoelectric element and Design II has two smaller and equally sized ZnO piezoelectric elements; however, the total area of ZnO thin film in two designs is equal. The ZnO thin film is deposited by means of radio-frequency magnetron sputtering method and is characterized by means of XRD and SEM techniques. These ZnO energy harvesters are fabricated by using MEMS micromachining. The natural frequencies of the fabricated ZnO energy harvesters are simulated and tested. The test results show that these two energy harvesters with different designs have almost the same natural frequency. Then, the output performance of different ZnO energy harvesters is tested in detail. The effects of series connection and parallel connection of two ZnO elements on the load voltage and power are also analyzed. The experimental results show that the energy harvester with two ZnO piezoelectric elements in parallel connection in Design II has higher load voltage and higher load power than the fabricated energy harvesters with other designs. Its load voltage is 2.06 V under load resistance of 1 MΩ and its maximal load power is 1.25 μW under load resistance of 0.6 MΩ, when it is excited by an external vibration with frequency of 1300.1 Hz and acceleration of 10 m/s(2). By contrast, the load voltage of the energy harvester of Design I is 1.77 V under 1 MΩ resistance and its maximal load power is 0.98 μW under 0.38 MΩ load resistance when it is excited by the same vibration.

  18. Thickness-dependent growth orientation of F-doped ZnO films formed by atomic layer deposition

    SciTech Connect

    Kang, Kyung-Mun; Choi, Yong-June; Park, Hyung-Ho; Yeom, Geun Young

    2016-01-15

    ZnO thin films were doped with fluorine using atomic layer deposition (ALD) with an in-house F source at a deposition temperature of 140 °C. Structural and morphological properties of the resulting F-doped ZnO (ZnO:F) films were investigated by x-ray diffraction analysis, field emission scanning electron microscopy, and grazing incidence wide-angle x-ray diffraction. During the initial growth stage of up to 200 ALD cycles, no difference was observed between the preferred growth orientations of undoped ZnO and ZnO:F films. However, after 300 ALD cycles, ZnO and ZnO:F films showed (002) and (100) preferred orientation, respectively. This difference in preferred growth orientation arose from the perturbation-and-passivation effect of F doping, which involves F anions filling the oxygen-related defect sites in the ZnO lattice. Ultraviolet photoelectron spectroscopic analyses were carried out to investigate the surface plane dependency of the films' work functions, which confirmed that the ZnO and ZnO:F films had different growth behaviors.

  19. Optical properties of antimony-doped p-type ZnO films fabricated by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Pan, X. H.; Guo, W.; Ye, Z. Z.; Liu, B.; Che, Y.; He, H. P.; Pan, X. Q.

    2009-06-01

    We investigated optical properties of Sb-doped p-type ZnO films grown on n-Si (100) substrates by oxygen plasma-assisted pulsed laser deposition. Two acceptor states, with the acceptor levels of 161 and 336 meV, are identified by well-resolved photoluminescence spectra. Under oxygen-rich conditions, the deep acceptor in Sb-doped ZnO film is Zn vacancy. The shallow acceptor is SbZn-2VZn complex induced by Sb doping. The origin of p-type behavior in Sb-doped ZnO has been ascribed to the formation of SbZn-2VZn complex.

  20. Photoluminescence, ellipsometric, optical and morphological studies of sprayed Co-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Gençyılmaz, O.; Atay, F.; Akyüz, I.

    2016-06-01

    In this study, undoped and cobalt (Co)-doped zinc oxide (ZnO) films were successfully produced by ultrasonic spray pyrolysis (USP) technique at low temperature (350°C). The optical and surface properties were investigated as a function of Co content. The optical parameters (thickness, refractive index and extinction coefficient) were determined using spectroscopic ellipsometry (SE) and it was seen that the refractive index and extinction coefficient values of Co-doped ZnO films decreased slightly depending on the increasing of Co doping. For investigation, the transmittance and photoluminescence (PL) spectra of the films, UV-Vis spectrophotometer and PL spectroscopy were used at room temperature. The transmittance spectra show that transmittance values decreased and Co+2 ions substitute Zn+2 ions of ZnO lattice. The optical band gap values decreased from 3.26 eV to 2.85 eV with the changing of Co content. The results of PL spectra exhibit the position of the different emission peaks unchanged but the intensity of peaks increased with increasing Co doping. Also, the surface properties of the films were obtained by atomic force microscopy (AFM) and these results indicated that the surface morphology and roughness values were prominently changed with Co doping.

  1. Variable range hopping crossover and magnetotransport in PLD grown Sb doped ZnO thin film

    NASA Astrophysics Data System (ADS)

    Mukherjee, Joynarayan; Mannam, Ramanjaneyulu; Ramachandra Rao, M. S.

    2017-04-01

    We report on the variable range hopping (VRH) crossover in the electrical transport of Sb doped ZnO (SZO) thin film. Structural, chemical, electrical and magnetotransport properties were carried out on SZO thin film grown by pulsed laser deposition. X-photoelectron spectroscopy study confirms the presence of both Sb3+(33%) and Sb5+(67%) states. Sb doped ZnO thin film shows n-type behavior which is attributed to the formation of SbZn and/or SbZn–VZn defect complex. Temperature dependent resistivity measurement showed that in a low temperature regime (< 90 K) transport is governed by the 3D-VRH mechanism. A crossover from 3D-VRH to Efros–Shklovoski VRH was observed around 12 K. Negative magnetoresistance (MR) is observed in the entire temperature range (300–5 K), however, there is an upturn in the MR behavior at 5 K suggesting the existence of a positive component. The MR behavior of Sb doped ZnO thin films is explained by the Khosla and Fischer model.

  2. Reflection Properties of Metallic Gratings on ZnO Films over GaAs Substrates

    NASA Technical Reports Server (NTRS)

    Hickernell, Fred S.; Kim, Yoonkee; Hunt, William D.

    1994-01-01

    A potential application for piezoelectric film deposited on GaAs substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Metallic gratings are basic elements required for the construction of such devices, and analyzing the reflectivity and the velocity change due to metallic gratings is often a critical design parameter. In this article, Datta and Hunsinger technique is extended to the case of a multilayered structure, and the developed technique is applied to analyze shorted and open gratings on ZnO films sputtered over (001)-cut (110)-propagating GaAs substrates. The analysis shows that zero reflectivity of shorted gratings can be obtained by a combination of the ZnO film and the metal thickness and the metalization ratio of the grating. Experiments are performed on shorted and an open gratings (with the center frequency of about 180 MHz) for three different metal thicknesses over ZnO films which are 0.8 and 2.6 micrometers thick. From the experiments, zero reflectivity at the resonant frequency of the grating is observed for a reasonable thickness (h/Alpha = 0.5%) of aluminum metalization. The velocity shift between the shorted and the open grating is also measured to be 0.18 MHz and 0.25 MHz for 0.8 and 1.6 micrometers respectively. The measured data show relatively good agreement with theoretical predictions.

  3. Investigation of sensitivity and selectivity of ZnO thin film to volatile organic compounds

    NASA Astrophysics Data System (ADS)

    Teimoori, F.; Khojier, K.; Dehnavi, N. Z.

    2017-06-01

    This research addresses a detailed study on the sensitivity and selectivity of ZnO thin film to volatile organic compound (VOC) vapors that can be used for the development of VOC sensors. The ZnO thin film of 100 nm thickness was prepared by post-annealing of e-beam evaporated Zn thin film. The sample was structurally, morphologically, and chemically characterized by X-ray diffraction and field emission scanning electron microscopy analyses. The sensitivity, selectivity, and detection limit of the sample were tested with respect to a wide range of common VOC vapors, including acetone, formaldehyde, acetic acid, formic acid, acetylene, toluene, benzene, ethanol, methanol, and isopropanol in the temperature range of 200-400 °C. The results show that the best sensitivity and detection limit of the sample are related to acetone vapor in the studied temperature range. The ZnO thin film-based acetone sensor also shows a good reproducibility and stability at the operating temperature of 280 °C.

  4. Magnetic Coupling of Dissimilar ZnO-Co Granular Films Through a ZnO Spacer

    NASA Astrophysics Data System (ADS)

    Li, Xiaoli; Jia, Juan; Gao, Yan; Gehring, G. A.; Xu, Xiaohong

    2015-12-01

    An all-oxide granular film (GF) with a sandwich structure containing cobalt metal nanoparticles embedded in ZnO is fabricated by magnetron sputtering. Large and small Co particles can be obtained simultaneously in a sample by depositing nanostructured ZnO-Co layers at high and low temperatures, respectively. The two ZnO-Co layers couple with each other through a ZnO spacer layer, whose thickness tunes the strength of the coupling. Both the magnetic properties and the magnetoresistance (MR) of the samples depend on the sandwich structure. Magnetic interactions can be transferred through the polycrystalline pure ZnO spacer layer even when the layer is as thick as 40nm due to the long spin coherence length. An analysis of the data found that the spin coherence length was greater than ˜17nm at room temperature (RT) in a polycrystalline film with very small grains. Tuning the resistance of the ZnO-Co layer deposited at a low temperature by adding aluminum so that it more nearly matches the resistance of the ZnO-Co layer deposited at a high temperature, dramatically enhances the MR of the sandwich sample. This study illustrates the power of combining films containing different sizes of nanoparticles in order to optimize the MR and so make the ZnO-based films more suitable for applications in spintronics.

  5. Improved electrical, optical, and structural properties of undoped ZnO thin films grown by water-mist-assisted spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Martínez Pérez, L.; Aguilar-Frutis, M.; Zelaya-Angel, O.; Muñoz Aguirre, N.

    2006-08-01

    Undoped ZnO thin films were prepared using the ultrasonic spray pyrolysis deposition technique with zinc acetylacetonate dissolved in N,N-dimethylformamide as the source materials solution. The addition of water mist in a parallel flux to the spray solution stream was also used during deposition of the films. The addition of water mist improved the electrical characteristics of the ZnO films. Fresh ZnO samples were then thermally annealed in a H2 reducing atmosphere. X-ray diffraction patterns show mainly the wurzite crystalline ZnO phase in the films. An electrical resistivity ( ) of around 2.7 × 10-2 cm was measured at room temperature for the best undoped ZnO film. is approximately one order of magnitude lower than the resistivities found in undoped ZnO films obtained by means of similar non-vacuum deposition techniques.

  6. Nanostructured ZnO thin films prepared by sol-gel spin-coating

    NASA Astrophysics Data System (ADS)

    Heredia, E.; Bojorge, C.; Casanova, J.; Cánepa, H.; Craievich, A.; Kellermann, G.

    2014-10-01

    ZnO thin films deposited on silica flat plates were prepared by spin-coating and studied by applying several techniques for structural characterization. The films were prepared by depositing different numbers of layers, each deposition being followed by a thermal treatment at 200 °C to dry and consolidate the successive layers. After depositing all layers, a final thermal treatment at 450 °C during 3 h was also applied in order to eliminate organic components and to promote the crystallization of the thin films. The total thickness of the multilayered films - ranging from 40 nm up to 150 nm - was determined by AFM and FESEM. The analysis by GIXD showed that the thin films are composed of ZnO crystallites with an average diameter of 25 nm circa. XR results demonstrated that the thin films also exhibit a large volume fraction of nanoporosity, typically 30-40 vol.% in thin films having thicknesses larger than ∼70 nm. GISAXS measurements showed that the experimental scattering intensity is well described by a structural model composed of nanopores with shape of oblate spheroids, height/diameter aspect ratio within the 0.8-0.9 range and average diameter along the sample surface plane in the 5-7 nm range.

  7. The role of seeding in the morphology and wettability of ZnO nanorods films on different substrates

    NASA Astrophysics Data System (ADS)

    Rodríguez, Juan; Onna, Diego; Sánchez, Luis; Marchi, M. Claudia; Candal, Roberto; Ponce, Silvia; Bilmes, Sara A.

    2013-08-01

    Spray pyrolysis (SP) and spray-gel (SG) techniques were used to deposit ZnO seeds on Fluor doped tin oxide glasses (FTO), heated at 350 °C or 130 °C, and PET heated at 90 °C. The effect of seeding on the morphology and wettability of ZnO nanorods (NRs) films grown by wet chemical methods was analyzed. The morphology and wettability of ZnO NRs films depend on the seeding process. SP seeds formed from zinc acetate dissolved in water ethanol mixtures yield vertically aligned ZnO NRs, whose diameters and dispersion size are determined by the ethanol/water ratio in the precursor solution. SG seeds formed from a methanol ZnO sol produce a ring patterned distribution on the FTO substrate. The drying of ZnO sol drops impinging on the substrate produces high density of seeds along a ring yielding textured films with NRs vertically oriented on the rings and multi-oriented outside them. This effect was not observed when ZnO NRs grown onto the ZnO/PET substrate, however rod diameter is related with the density of seeds. This way to control the density and diameter of NRs deposited onto a substrate modify the wettability and opens new possibilities for the design of tailored nanomaterials for photochemical applications. Both type of NRs films showed a strong luminescence emission in the UV and in the blue, associated with surface and intrinsic defects.

  8. ZnO thin films on single carbon fibres fabricated by Pulsed Laser Deposition (PLD)

    NASA Astrophysics Data System (ADS)

    Krämer, André; Engel, Sebastian; Sangiorgi, Nicola; Sanson, Alessandra; Bartolomé, Jose F.; Gräf, Stephan; Müller, Frank A.

    2017-03-01

    Single carbon fibres were 360° coated with zinc oxide (ZnO) thin films by pulsed laser deposition using a Q-switched CO2 laser with a pulse duration τ ≈ 300 ns, a wavelength λ = 10.59 μm, a repetition frequency frep = 800 Hz and a peak power Ppeak = 15 kW in combination with a 3-step-deposition technique. In a first set of experiments, the deposition process was optimised by investigating the crystallinity of ZnO films on silicon and polished stainless steel substrates. Here, the influence of the substrate temperature and of the oxygen partial pressure of the background gas were characterised by scanning electron microscopy and X-ray diffraction analyses. ZnO coated carbon fibres and conductive glass sheets were used to prepare photo anodes for dye-sensitised solar cells in order to investigate their suitability for energy conversion devices. To obtain a deeper insight of the electronic behaviour at the interface between ZnO and substrate I-V measurements were performed.

  9. Optical Tailoring of RF Magnetron Sputtered ZnO Thin Films

    NASA Astrophysics Data System (ADS)

    Hassan, A.; Feng, C.; Riaz, S.; Naseem, S.; Jiang, Y.

    2017-06-01

    Pure and N2 doped ZnO thin films of thickness ranging ∼300-500nm with 5,10,15,20,25, and 50 sccm inflow ratios of N2 are deposited on soda-lime glass by means of RF magnetron sputtering system, and observed the dependence of optical properties of ZnO by the function of doping with the help of spectroscopic ellipsometer. And found that the N2-inflow highly affects the optical properties of ZnO thin films. Even the high transmittance of about 97% is achieved and absorbance graph also shows that slight variation in N2 inflow affects the absorbance, which is maximum with in UV region. Optical conductivity of ZnO is also observed high with the increase of N2 inflow. With 25sccm N2 inflow conductivity rose to the maximum value of about 1.4 × 107 Ω -1cm-1, with 15sccm inflow of N2 conductivity value is 2.0 × 106 Ω -1cm-1 in the visible region. This is a strong contribution towards next generation photovoltaic devices.

  10. Investigation of structural and optical properties of ZnO films co-doped with fluorine and indium

    NASA Astrophysics Data System (ADS)

    Keskenler, E. F.; Turgut, G.; Doğan, S.

    2012-07-01

    Undoped ZnO film and ZnO films, which are co-doped with F and In (FIZO) at different concentrations, were synthesized by sol-gel technique and the effects of co-doping of F and In on structural and optical properties of ZnO thin films were investigated. The concentration ratio of [F]/[Zn] was altered from 0.25 to 1.75 with 0.50 step at.% mole and [In]/[Zn] was altered from 0.25 to 1.00 with 0.25 step at.% mole. X-ray diffraction analysis indicates that the films have polycrystalline nature and the (0 0 2) preferred orientation is the stronger peak. No extra phases involving zinc, fluorine and indium compounds were observed even at high F and In content. The grain size of undoped ZnO and FIZO thin films varied between 15 and 20 nm with a small fluctuation. From the SEM images, although the undoped ZnO had a smooth and particle-shaped surface, FIZO films had nanofiber-networks shapes over the surface with average size of 500 nm. The surface morphologies and crystallite sizes for the F and In doped films were slightly different from than those of undoped film. From the optical study, a slight shrinkage of band gap was backwardly observed from 3.36 to 3.25 eV with the increasing of F and In content.

  11. Novel sol-gel synthesis of cerium-doped ZnO thin films for photocatalytic activity

    NASA Astrophysics Data System (ADS)

    Senthilvelan, S.; Chandraboss, V. L.; Karthikeyan, B.; Murugavelu, M.; Loganathan, B.; Natanapatham, L.

    2012-07-01

    The Ce-doped ZnO films on silica glass plates were prepared by sol-gel dip coating technique. The surface morphology of thin films was characterized by means of scanning electron microscopy (SEM). Optical properties of films have been investigated using UV-visible spectroscopy. The photocatalytic activity was established by testing the degradation of Alizarin Red (AR) from aqueous solution. The test of photocatalytic activity of the heat-treated Ce-doped ZnO films were also carried out under visible light irradiation.

  12. Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering

    SciTech Connect

    Kunj, Saurabh Sreenivas, K.

    2016-05-23

    Radio frequency Magnetron sputtering technique was employed to fabricate ZnO thin films on quartz substrate at room temperature. The effect of varying oxygen to argon (O{sub 2}/Ar) gas ratio on the structural and photoluminescence properties of the film is analyzed.X-ray diffraction (XRD) spectra reveals the formation of hexagonal wurtzite structured ZnO thin films with preferred orientation along (002) plane. Photoluminescence (PL) characterization reveals the preparation of highly crystalline films exhibiting intense Ultraviolet (UV) emission with negligible amount of defects as indicated by the absence of Deep Level Emission (DLE) in the PL spectra.

  13. Novel sol-gel synthesis of cerium-doped ZnO thin films for photocatalytic activity

    SciTech Connect

    Senthilvelan, S.; Chandraboss, V. L.; Karthikeyan, B.; Murugavelu, M.; Loganathan, B.; Natanapatham, L.

    2012-07-23

    The Ce-doped ZnO films on silica glass plates were prepared by sol-gel dip coating technique. The surface morphology of thin films was characterized by means of scanning electron microscopy (SEM). Optical properties of films have been investigated using UV-visible spectroscopy. The photocatalytic activity was established by testing the degradation of Alizarin Red (AR) from aqueous solution. The test of photocatalytic activity of the heat-treated Ce-doped ZnO films were also carried out under visible light irradiation.

  14. Structural Properties of Ultrasonically Sprayed Al-Doped ZnO (AZO) Thin Films: Effect of ZnO Buffer Layer on AZO

    NASA Astrophysics Data System (ADS)

    Babu, B. J.; Velumani, S.; Arenas-Alatorre, J.; Kassiba, A.; Chavez, Jose; Park, Hyeonsik; Hussain, Shahzada Qamar; Yi, Junsin; Asomoza, R.

    2015-02-01

    Transparent aluminium-doped ZnO (AZO)-conducting oxide films were deposited on a glass substrate, using an ultrasonic spray pyrolysis (USP) system at 475°C. We investigated the effects of the Al/Zn atomic ratios on the structural properties of the AZO films. All the deposited AZO thin films presented hexagonal wurtzite structure. As Al doping increased in the film, the preferential orientation switched from [002] to [101], and crystallite sizes varied from 31.90 nm to 34.5 nm. Field emission scanning electron microscopy showed a change in the surface morphology of the AZO films with respect to the Al/Zn ratio, and secondary ion mass spectroscopy showed that the amount of Al incorporated into the films was proportional to the concentration of the starting solution. A fast Fourier transform of the AZO film measurements confirmed the presence of (100), (102), and (200) reflections, corresponding to a wurtzite structure of the AZO thin films. The plane corresponding to AZO was simulated, and matched the experimental pattern obtained from high-resolution transmission electron microscopy. An un-doped ZnO layer was deposited onto the AZO film using USP at 400°C, and a bilayer of AZO/ZnO was annealed in vacuum for 20 min at 350°C. The resistivity of these bilayer films was lower than that of a single-layered AZO film, and it further decreased by vacuum annealing.

  15. Characterization of piesoelectric ZnO thin films and the fabrication of piezoelectric micro-cantilevers

    SciTech Connect

    Johnson, Raegan Lynn

    2005-01-01

    In Atomic Force Microscopy (AFM), a microcantilever is raster scanned across the surface of a sample in order to obtain a topographical image of the sample's surface. In a traditional, optical AFM, the sample rests on a bulk piezoelectric tube and a control loop is used to control the tip-sample separation by actuating the piezo-tube. This method has several disadvantages--the most noticeable one being that response time of the piezo-tube is rather long which leads to slow imaging speeds. One possible solution aimed at improving the speed of imaging is to incorporate a thin piezoelectric film on top of the cantilever beam. This design not only improves the speed of imaging because the piezoelectric film replaces the piezo-tube as an actuator, but the film can also act as a sensor. In addition, the piezoelectric film can excite the cantilever beam near its resonance frequency. This project aims to fabricate piezoelectric microcantilevers for use in the AFM. Prior to fabricating the cantilevers and also part of this project, a systematic study was performed to examine the effects of deposition conditions on the quality of piezoelectric ZnO thin films deposited by RF sputtering. These results will be presented. The deposition parameters that produced the highest quality ZnO film were used in the fabrication of the piezoelectric cantilevers. Unfortunately, the fabricated cantilevers warped due to the intrinsic stress of the ZnO film and were therefore not usable in the AFM. The complete fabrication process will be detailed, the results will be discussed and reasons for the warping will be examined.

  16. Physical deoxygenation of graphene oxide paper surface and facile in situ synthesis of graphene based ZnO films

    SciTech Connect

    Ding, Jijun; Wang, Minqiang Zhang, Xiangyu; Ran, Chenxin; Shao, Jinyou; Ding, Yucheng

    2014-12-08

    In-situ sputtering ZnO films on graphene oxide (GO) paper are used to fabricate graphene based ZnO films. Crystal structure and surface chemical states are investigated. Results indicated that GO paper can be effectively deoxygenated by in-situ sputtering ZnO on them without adding any reducing agent. Based on the principle of radio frequency magnetron sputtering, we propose that during magnetron sputtering process, plasma streams contain large numbers of electrons. These electrons not only collide with argon atoms to produce secondary electrons but also they are accelerated to bombard the substrates (GO paper) resulting in effective deoxygenation of oxygen-containing functional groups. In-situ sputtering ZnO films on GO paper provide an approach to design graphene-semiconductor nanocomposites.

  17. Physical deoxygenation of graphene oxide paper surface and facile in situ synthesis of graphene based ZnO films

    NASA Astrophysics Data System (ADS)

    Ding, Jijun; Wang, Minqiang; Zhang, Xiangyu; Ran, Chenxin; Shao, Jinyou; Ding, Yucheng

    2014-12-01

    In-situ sputtering ZnO films on graphene oxide (GO) paper are used to fabricate graphene based ZnO films. Crystal structure and surface chemical states are investigated. Results indicated that GO paper can be effectively deoxygenated by in-situ sputtering ZnO on them without adding any reducing agent. Based on the principle of radio frequency magnetron sputtering, we propose that during magnetron sputtering process, plasma streams contain large numbers of electrons. These electrons not only collide with argon atoms to produce secondary electrons but also they are accelerated to bombard the substrates (GO paper) resulting in effective deoxygenation of oxygen-containing functional groups. In-situ sputtering ZnO films on GO paper provide an approach to design graphene-semiconductor nanocomposites.

  18. Synthesis of Flower-Like ZnO Films and Their Photovoltaic Properties for Dye-Sensitized Solar Cells

    NASA Astrophysics Data System (ADS)

    Zhang, Linsen; Jin, Kai; Li, Suzhen; Wang, Lizhen; Zhang, Yong; Li, Xiaofeng

    2015-01-01

    Flower-like ZnO films were synthesized by chemical bath deposition, and their performance as photoanodes for dye-sensitized solar cells (DSSCs) was investigated. The physical and chemical properties of the grown layers as a function of Zn2+ concentration were investigated by scanning electron microscopy, energy-dispersive spectroscopy, and ultraviolet (UV) -visible spectroscopy. Electrochemical impedance spectroscopy and open-circuit voltage decay curve measurements were used to determine the kinetic processes of the ZnO photoanodes of the DSSCs. The results show that the bandgap of the ZnO film was smaller than that of the pure one. DSSCs with flower-like ZnO film with 0.05 M Zn2+ exhibited the smallest electron-transfer resistance in the ZnO/dye/electrolyte interface, indicating the highest light conversion efficiency. DSSCs based on 0.075 M Zn2+ showed the highest open-circuit voltage of 0.74 V.

  19. Enhanced electron field emission from ZnO nanoparticles-embedded DLC films prepared by electrochemical deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Peizeng; Li, Ruishan; Yang, Hua; Feng, Youcai; Xie, Erqing

    2012-06-01

    ZnO nanoparticles-embedded diamond-like amorphous (DLC) carbon films have been prepared by electrochemical deposition. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) results confirm that the embedded ZnO nanoparticles are in the wurtzite structure with diameters of around 4 nm. Based on Raman measurements and atomic force microscope (AFM) results, it has been found that ZnO nanoparticles embedding could enhance both graphitization and surface roughness of DLC matrix. Also, the field electron emission (FEE) properties of the ZnO nanoparticles-embedded DLC film were improved by both lowering the turn-on field and increasing the current density. The enhancement of the FEE properties of the ZnO-embedded DLC film has been analyzed in the context of microstructure and chemical composition.

  20. Thin Solid Films Topical Special Issue on ZnO related transparent conductive oxides

    SciTech Connect

    Chu, Jinn P.; Endo, Tamio; Ellmer, Klaus; Gessert, Tim; Ginley, David

    2016-04-01

    World-wide research activities on ZnO and related transparent conductive oxides (TCO) in thin film, nanostructured, and multilayered forms are driven by the vast potential of these materials for optoelectronic, microelectronic, and photovoltaic applications. Renewed interest in ZnO applications is partly stimulated by cost reduction in material processing and device development. One of the most important issues is doping and alloying with Al, Ga, In, Sn, etc. in order to tune properties. When highly doped, these materials are used as transparent-conducting contacts on solar cells, as well as in catalytic, spintronic, and surface acoustic wave devices. Film growth conditions, including substrate type and orientation, growth temperature, deposition rate, and ambient atmosphere, all play important roles in determining structural, electrical, magnetic, and optical properties.

  1. Characterization and Fabrication of ZnO Nanowires Grown on AlN Thin Film

    SciTech Connect

    Yousefi, Ramin; Kamaluddin, Burhanuddin; Ghoranneviss, Mahmood; Hajakbari, Fatemeh

    2009-07-07

    In this paper, we report ZnO nanowires grown on AlN thin film deposited on glass as substrate by physical vapour deposition. The temperature of substrates was kept between 600 deg. C and 500 deg. C during the growth. The typical average diameters of the obtained nanowires on substrate at 600 deg. C and 500 deg. C was about 57 nm and 22 nm, respectively with several micrometers in lengths. X-ray diffraction and Auger spectroscopy results showed Al diffused from AlN thin film into ZnO nanowires for sample at high temperature zone. In the photoluminescence spectra two emission bands appeared, one related to ultraviolet emission with a strong peak at 380-382 nm, and another related to deep level emission with a weak peak at 510 nm.

  2. Perovskite solar cells based on nanocolumnar plasma-deposited ZnO thin films.

    PubMed

    Ramos, F Javier; López-Santos, Maria C; Guillén, Elena; Nazeeruddin, Mohammad Khaja; Grätzel, Michael; Gonzalez-Elipe, Agustin R; Ahmad, Shahzada

    2014-04-14

    ZnO thin films having a nanocolumnar microstructure are grown by plasma-enhanced chemical vapor deposition at 423 K on pre-treated fluorine-doped tin oxide (FTO) substrates. The films consist of c-axis-oriented wurtzite ZnO nanocolumns with well-defined microstructure and crystallinity. By sensitizing CH3NH3PbI3 on these photoanodes a power conversion of 4.8% is obtained for solid-state solar cells. Poly(triarylamine) is found to be less effective when used as the hole-transport material, compared to 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD), while the higher annealing temperature of the perovskite leads to a better infiltration in the nanocolumnar structure and an enhancement of the cell efficiency.

  3. Semiconducting Properties of Swift Au Ion-Irradiated ZnO Thin Films at Room Temperature

    NASA Astrophysics Data System (ADS)

    Kwon, Sera; Park, Hyun-Woo; Chung, Kwun-Bum

    2017-02-01

    The semiconducting properties of Au ion-irradiated ZnO thin films were investigated as a function of ion irradiation dose at room temperature. The Au ion irradiation was conducted with acceleration energy of 130 MeV in the ion dose range from 1 × 1011 to 5 × 1012 ions/cm2. The physical properties showed no change regardless of the Au ion irradiation dose; however, the electrical properties of Au ion-irradiated ZnO thin films changed, depending on the Au ion irradiation dose. The electronic structure drastically changed with the evolution of hybridized molecular orbital structure for the conduction band and band edge states below the conduction band. These remarkable changes in electronic structure correlate with changes in electrical properties, such as carrier concentration and mobility.

  4. Modification of the optical properties of ZnO thin films by proton implantation

    SciTech Connect

    Ham, Yong Ju; Park, Jun Kue; Lee, W.; Lee, Cheol Eui; Park, W.

    2012-09-15

    Highlights: ► Optical properties of proton-implanted ZnO thin film prepared by rf magneton sputtering were studied. ► Increase in the ordinary refractive index after proton implantation was explained by the polarizability. ► A slight decrease in the optical bandgap by proton implantation was identified. -- Abstract: Optical properties of proton-implanted ZnO thin film prepared by radio-frequency (rf) magneton sputtering have been studied, the optical constants being obtained from the reflectance measurements by employing Cauchy–Urbach model. Increase in the ordinary refractive index after proton implantation was explained by that in the polarizability. Besides, a slight increase in the optical band gap by proton implantation was identified and discussed in terms of the hydrogen shallow donors introduced by the proton implantation.

  5. X-ray studies on optical and structural properties of ZnO nanostructured thin films

    NASA Astrophysics Data System (ADS)

    Larcheri, S.; Armellini, C.; Rocca, F.; Kuzmin, A.; Kalendarev, R.; Dalba, G.; Graziola, R.; Purans, J.; Pailharey, D.; Jandard, F.

    2006-01-01

    X-ray absorption near-edge fine structure (XANES) studies have been carried out on nanostructured ZnO thin films prepared by atmospheric pressure chemical vapour deposition (APCVD). Films have been characterized by X-ray diffraction (XRD) and optical luminescence spectroscopy exciting with laser light (PL) or X-ray (XEOL). According to XRD measurements, all the APCVD samples reveal a highly (002) oriented crystalline structure. The samples have different thickness (less than 1 μm) and show significant shifts of the PL and XEOL bands in the visible region. Zn K-edge XANES spectra were recorded using synchrotron radiation at BM08 of ESRF (France), by detecting photoluminescence yield (PLY) and X-ray fluorescence yield (FLY). The differences between the PLY- and FLY-XANES confirm the possibility of studying the local environment in the luminescence centres and to correlate the structural and optical properties of ZnO nanostructured samples.

  6. E-beam evaporated ZnO thin films: Fabrication and characterization as UV detector

    NASA Astrophysics Data System (ADS)

    Portesi, C.; Lolli, L.; Taralli, E.; Rajteri, M.; Monticone, E.

    2015-03-01

    In the present paper, fabrication and structural, optical and electrical characterization of ZnO thin films grown by electron gun technique are reported and the performances of a prototype of UV photodetector based on them are illustrated. ZnO thin films, fabricated on sapphire by e-beam evaporation followed by a two-step ex situ treatment (annealing and oxidation), are polycrystalline, with a smooth surface and show very good visible transparency and an energy gap of 3.2eV. Preliminary results on fabrication and characterization of an UV detector are reported. The Al interdigitated contacts show a Schottky behavior, which is strongly desired in view of applications since it has many advantages in the aspects of high quantum efficiency, response time, low dark current, high UV/visible contrast and possible zero-bias operation.

  7. Recent advances in the transparent conducting ZnO for thin-film Si solar cells

    NASA Astrophysics Data System (ADS)

    Moon, Taeho; Shin, Gwang Su; Park, Byungwoo

    2015-11-01

    The key challenge for solar-cell development lies in the improvement of power-conversion efficiency and the reduction of fabrication cost. For thin-film Si solar cells, researches have been especially focused on the light trapping for the breakthrough in the saturated efficiencies. The ZnO-based transparent conducting oxides (TCOs) have therefore received strong attention because of their excellent light-scattering capability by the texture-etched surface and cost effectiveness through in-house fabrication. Here, we have highlighted our recent studies on the transparent conducting ZnO for thin-film Si solar cells. From the electrical properties and their degradation mechanisms, bilayer deposition and organic-acid texturing approaches for enhancing the light trapping, and finally the relation between textured ZnO and electrical cell performances are sequentially introduced in this review article. [Figure not available: see fulltext.

  8. Effects of Al and Sn dopants on the structural and optical properties of ZnO thin films

    NASA Astrophysics Data System (ADS)

    Pan, Zhanchang; Tian, Xinlong; Wu, Shoukun; Xiao, Chumin; Li, Zhuliang; Deng, Jianfeng; Hu, Guanghui; Wei, Zhigang

    2013-02-01

    Al, Sn doped ZnO nanocrystals were successfully synthesized onto glass substrates by the sol-gel processing. The structure and morphology of crystals were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The effects of various doping concentrations on electrical and optical properties were investigated by 4-point probe device and UV-VIS spectroscopy, respectively. The carrier concentration and carrier mobility of the doped ZnO thin films were also calculated and discussed. The lowest resistivity, 2 × 10-3 Ω cm, was observed for Sn doped ZnO (TZO) thin films with Sn doping concentration of 2 at.%, with an average optical transmittance of 89.2% in the visible range. As to Al doped ZnO (AZO) thin films, the lowest resistivity was of 9 × 10-2 Ω cm, with a higher average transmittance (91.4%) obtained from the sample with Al doping concentration of 1 at.%. The X-ray photoelectron spectroscopy (XPS) study showed Al-O and Sn-O bonding in the synthesized ZnO thin films, which confirmed the substitution of Zn2+ by Al and Sn ions. Room temperature photoluminescence was observed for pure and Al, Sn doped ZnO thin films and the origin of the emissions was discussed.

  9. Raman scattering and photoluminescence investigations of N doped ZnO thin films: Local vibrational modes and induced ferromagnetism

    NASA Astrophysics Data System (ADS)

    Jindal, Kajal; Tomar, Monika; Katiyar, R. S.; Gupta, Vinay

    2016-10-01

    N doped ZnO (ZnO:N) thin films are prepared by pulsed laser deposition in an oxygen environment using ZnO:N targets with varying nitrogen doping concentrations (1%-10%). The impact of nitrogen incorporation on the microstructural properties of prepared ZnO:N thin films has been studied using Raman scattering. The Raman shift of E2(high) mode towards lower frequencies indicate the substitution of N at O lattice sites (NO). A local vibrational mode corresponding to Zn-N was observed at 480.3 cm-1 in N doped ZnO thin films and highlights the increased strength of the Zn-N bond in the ZnO lattice. Photoluminescence studies reveal the dominant near band edge emission peak in the ultraviolet region and the absence of deep level emission due to defects. The ZnO:N thin films are found to possess room temperature ferromagnetism. N is found to play a significant role in arising ferromagnetism in ZnO and possess a solubility limit of 8% for uniform and homogeneous atomic substitution in ZnO. The present study confirms the promising application of N doped ZnO (ZnO:N) thin films for room temperature spintronics applications.

  10. Sodium and potassium doped P-type ZnO films by sol-gel spin-coating technique

    NASA Astrophysics Data System (ADS)

    Au, Benedict Wen-Cheun; Chan, Kah-Yoong

    2017-07-01

    Zinc oxide (ZnO) is a promising material in a variety of applications including sensors, transistors and solar cells. Many researchers studied N-type ZnO films and reported enhanced properties. On the other hand, P-type ZnO films were rarely attempted due to the self-compensation effect. Success in achieving P-type ZnO films is important as it will pave the way for more advanced complementary devices. In this work, P-type sodium and potassium doped ZnO films were fabricated on glass substrates with doping concentration between 0 and 25 at.%. The influences of doping concentration on surface morphology, structural, optical and electrical properties were investigated using atomic force microscopy, X-ray diffraction spectroscopy, energy-dispersive X-ray spectroscopy, ultraviolet-visible (UV-Vis) spectrophotometer, photoluminescence spectroscopy and Hall-effect electrical transport measurement system. The distinctive behavior of P-type ZnO films with different doping concentrations will be discussed.

  11. ZnO thin film as MSG for sensitive biosensor

    NASA Astrophysics Data System (ADS)

    Iftimie, N.; Savin, A.; Steigmann, R.; Faktorova, D.; Salaoru, I.

    2016-08-01

    In this paper, we investigate the cholesterol sensors consisting of a mixture of cholesterol oxidase (ChOx) and zinc oxide (ZnO) nanoparticles were grown on ITO/glass substrates by vacuum thermal evaporation method and their sensing characteristics are examined in air. Also, the interest in surface waves appeared due to evanescent waves in the metallic strip grating in sub-wavelength regime. Before testing the transducer with metamaterials lens in the sub-wavelength regime, a simulation of the evanescent wave's formation has been performed at the edge of Ag strips, with thicknesses in the range of micrometers.

  12. Surface Texture and Structure of ZnO Films Synthesized by Off-Axis Sputtering Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, Ching-Hua; Lehoczky, Sandor L.; George, M. A.; Lowndes, D. H.

    1999-01-01

    Morphology and structure of ZnO films deposited on (0001) sapphire and glass substrates by off-axis sputtering are investigated at various temperatures and pressures. All films show highly textured structures on glass substrates and epitaxial growth on sapphire substrates. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 degrees. In textured films, it rises to several degrees. The trend of surface textures in films grown at low pressures is similar to those grown at high temperatures. A morphology transition from large well-defined hexagonal grains to flat surface was observed at a pressure of 50 mtorr and temperature of 550 C. The experiment results are explained by the transport behavior of depositing species.

  13. Characterization of nanostructured ZnO thin films deposited through vacuum evaporation.

    PubMed

    Alvarado, Jose Alberto; Maldonado, Arturo; Juarez, Héctor; Pacio, Mauricio; Perez, Rene

    2015-01-01

    This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm), which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing a gradual increase in transmittance spectra up to 85%. The optical band gaps obtained for these films are about 3.22 eV. The PL measurement shows an emission in the red and in the violet region and there is a correlation with the annealing process.

  14. Surface Texture and Structure of ZnO Films Synthesized by Off-Axis Sputtering Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, Ching-Hua; Lehoczky, Sandor L.; George, M. A.; Lowndes, D. H.

    1999-01-01

    Morphology and structure of ZnO films deposited on (0001) sapphire and glass substrates by off-axis sputtering are investigated at various temperatures and pressures. All films show highly textured structures on glass substrates and epitaxial growth on sapphire substrates. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 degrees. In textured films, it rises to several degrees. The trend of surface textures in films grown at low pressures is similar to those grown at high temperatures. A morphology transition from large well-defined hexagonal grains to flat surface was observed at a pressure of 50 mtorr and temperature of 550 C. The experiment results are explained by the transport behavior of depositing species.

  15. Interfacial structure and electrical properties of transparent conducting ZnO thin films on polymer substrates.

    PubMed

    Lim, Young Soo; Kim, Dae Wook; Kang, Jong-Ho; Seo, Seul Gi; Kim, Bo Bae; Choi, Hyoung-Seuk; Seo, Won-Seon; Cho, Yong Soo; Park, Hyung-Ho

    2013-08-01

    The effects of polymer substrates on the interfacial structure and the thermal stability of Ga-doped ZnO (GZO) thin films were investigated. The GZO thin films were deposited on polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) substrates by rf-magnetron sputtering at room temperature, and thermal stability tests of the GZO thin films on the polymer substrates were performed at 150°C up to 8 h in air. Electrical and structural characterizations of the GZO thin films on the PET and the PEN substrates were carried out, and the origins of the stable interfacial structure and the improved thermal stability of the GZO thin film on the PEN substrate were discussed.

  16. Characterization of nanostructured ZnO thin films deposited through vacuum evaporation

    PubMed Central

    Maldonado, Arturo; Juarez, Héctor; Pacio, Mauricio; Perez, Rene

    2015-01-01

    Summary This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm), which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing a gradual increase in transmittance spectra up to 85%. The optical band gaps obtained for these films are about 3.22 eV. The PL measurement shows an emission in the red and in the violet region and there is a correlation with the annealing process. PMID:25977868

  17. Orientation Effects in ZnO Films Using Off-Axis Sputtering Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, Ching-Hua; Lehoczky, S.; George, M. A.

    1999-01-01

    ZnO is a wide-band-gap oxide material and has been used in numerous applications. It is also a good substrate for fabricating GaN-based (a blue laser candidate) devices. Off-axis sputtering technique is one of the best techniques in synthesizing oxide materials because negative ion bombardment and particle kinetic energy is greatly reduced when adatoms condense on substrates. Since the sputtered material from the target arrive on the substrate surface at a 90 deg. configuration, which differs from the normal sputtering geometry, it is expected that the film uniformity and composition distributions will be affected. However, the details of these properties and mechanisms have not been well studied. ZnO films are synthesized on (0001) sapphire and quartz substrates by off-axis sputtering deposition in various oxygen/argon mixture ratios and pressures at different temperatures. Substrates and sputtering sources are placed at three different orientations that are orthogonal to each other. The normal direction of a substrate is parallel to the gravity vector and the other is perpendicular to it. Film thickness profiles at different growth orientations are determined using a profimeter. All films grown at high temperatures have highly textured structures on quartz substrates and epitaxially grow on sapphire substrates. Because of this process, the film surface is very smooth. X-ray diffraction, scanning probe microscopy, and Fourier transfer infrared spectroscopy, and electrical measurements will be used to characterize these films. Detailed results will be discussed in the presentation.

  18. Orientation Effects in ZnO Films Using Off-Axis Sputtering Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, Ching-Hua; Lehoczky, S.; George, M. A.

    1999-01-01

    ZnO is a wide-band-gap oxide material and has been used in numerous applications. It is also a good substrate for fabricating GaN-based (a blue laser candidate) devices. Off-axis sputtering technique is one of the best techniques in synthesizing oxide materials because negative ion bombardment and particle kinetic energy is greatly reduced when adatoms condense on substrates. Since the sputtered material from the target arrive on the substrate surface at a 90 deg. configuration, which differs from the normal sputtering geometry, it is expected that the film uniformity and composition distributions will be affected. However, the details of these properties and mechanisms have not been well studied. ZnO films are synthesized on (0001) sapphire and quartz substrates by off-axis sputtering deposition in various oxygen/argon mixture ratios and pressures at different temperatures. Substrates and sputtering sources are placed at three different orientations that are orthogonal to each other. The normal direction of a substrate is parallel to the gravity vector and the other is perpendicular to it. Film thickness profiles at different growth orientations are determined using a profimeter. All films grown at high temperatures have highly textured structures on quartz substrates and epitaxially grow on sapphire substrates. Because of this process, the film surface is very smooth. X-ray diffraction, scanning probe microscopy, and Fourier transfer infrared spectroscopy, and electrical measurements will be used to characterize these films. Detailed results will be discussed in the presentation.

  19. Femtosecond Degenerate Four-Wave-Mixing in ZnO Microcrystallite Thin Films

    NASA Astrophysics Data System (ADS)

    Zhang, Wei-li; Wang, Qing-yue; Chai, Lu; Xing, Qi-rong; K, Wong S.; H, Wang; Z, Tang K.; G, Wong K. L.; R, Jain

    1999-06-01

    Transient third-order optical nonlinearity χ(3) of ZnO microcrystallite thin films is measured at various temperatures by using femtosecond degenerate four-wave-mixing. Room-temperature excitonic enhancement of χ(3) is observed. The magnitude of χ(3) ranges between 10-4 to 10-6 esu from 4.2 K to room temperature. The measured χ(3) response time ranging from 200 to 300 fs is ultrafast for temperature down to 4.2 K.

  20. Electrical and optical properties of p-type codoped ZnO thin films prepared by spin coating technique

    NASA Astrophysics Data System (ADS)

    Pathak, Trilok Kumar; Kumar, Vinod; Swart, H. C.; Purohit, L. P.

    2016-03-01

    Undoped, doped and codoped ZnO thin films were synthesized on glass substrates using a spin coating technique. Zinc acetate dihydrate, ammonium acetate and aluminum nitrate were used as precursor for zinc, nitrogen and aluminum, respectively. X-ray diffraction shows that the thin films have a hexagonal wurtzite structure for the undoped, doped and co-doped ZnO. The transmittance of the films was above 80% and the band gap of the film varied from 3.20 eV to 3.24 eV for undoped and doped ZnO. An energy band diagram to describe the photoluminescence from the thin films was also constructed. This diagram includes the various defect levels and possible quasi-Fermi levels. A minimum resistivity of 0.0834 Ω-cm was obtained for the N and Al codoped ZnO thin films with p-type carrier conductivity. These ZnO films can be used as a window layer in solar cells and in UV lasers.

  1. Control of hydrophobic surface and wetting states in ultra-flat ZnO films by GLAD method

    NASA Astrophysics Data System (ADS)

    Chi, Po-Wei; Su, Chih-Wei; Wei, Da-Hua

    2017-05-01

    Ultra-flat Zinc oxide (ZnO) films with natural hydrophobicity were sputtered onto glass substrates by glancing angle deposition (GLAD) method without addition of active oxygen at room temperature under different glancing angles relating to the sample holder. The sample holder was positioned at glancing angles of 0° and 30°, and the sputtering power was fixed at 75 W with low argon (Ar) pressure of 1 × 10-2 Torr during deposition process. According to analysis of surface composition and structure, the naturally hydrophobic wetting state can be attributed to the different grain structure and hydrocarbon adsorbates on the top of the film surface. On the other hand, the interfacial water molecules near the surface of ultra-flat ZnO films are confirmed belong to the hydrophobic hydrogen structure by Fourier transform infrared/attenuated total reflection. In addition, the water contact angle was significantly improved by a simple factor of glancing angle. The water contact angle value of ultra-flat ZnO films increased from 90° to 98° while the sample holder is with glancing angle of 30°. Moreover, our present ultra-flat ZnO films also exhibited excellent transparency over 80%, and the surface wetting switched from hydrophobic to hydrophilic states after exposing in ultraviolet (UV) surroundings. Then, the ZnO films could be freely and stably reversed back to hydrophobicity after stored in dark surroundings. This present study not only demonstrates that the natural wettability of ultra-flat ZnO films is strongly associated with surface composition and structure, but also provides an easy way to modulate and improve the surface wettability. This also extends the potential applications of ultra-flat ZnO thin films and aids a profound understanding for device design and material development.

  2. Effect of precursor solutions on ZnO film via solution precursor plasma spray and corresponding gas sensing performances

    NASA Astrophysics Data System (ADS)

    Yu, Z. X.; Ma, Y. Z.; Zhao, Y. L.; Huang, J. B.; Wang, W. Z.; Moliere, M.; Liao, H. L.

    2017-08-01

    Solution precursor plasma spraying (SPPS) as a novel thermal spray method was employed to deposit nano-structured ZnO thin film using different formulations of the precursor solution. This article focuses on the influence of the solution composition on the preferential orientation of crystal growth, on crystal size and surface morphology of the resulting ZnO films. The trend of preferential growth along (002) lattice plane of ZnO film was studied by slow scanning X-ray diffraction using a specific coefficient P(002). It appears that the thermal spray process promotes the buildup of ZnO films preferentially oriented along the c-axis. The shape of single particle tends to change from round shaped beads to hexagonal plates by increasing the volume ratio of ethanol in the solvent. Both cauliflower and honeycomb-like surface morphologies featuring high specific surface area and roughness were obtained through the SPPS process by varying solution composition. These ZnO films are hydrophobic with contact angle as high as 136°, which is seemingly associated with micro reliefs developing high surface specific area. Then the gas sensing performances of ZnO films preferentially oriented along (002) face were tentatively predicted using the ;first principle calculation method; and were compared with those of conventional films that are mainly oriented along the (101) face. The (002) face displays better hydrogen adsorption capability than the (101) face with much larger resulting changes in electrical resistance. In conclusion, the c-axis oriented ZnO films obtained through SSPS have favorable performances to be used as sensitive layer in gas sensing applications.

  3. A lateral field excited ZnO film bulk acoustic wave sensor working in viscous environments

    NASA Astrophysics Data System (ADS)

    Chen, Da; Wang, Jingjing; Xu, Yan; Li, Dehua; Zhang, Liuyin; Liu, Weihui

    2013-09-01

    We present a lateral field excited ZnO film bulk acoustic resonator (FBAR) operated in pure-shear mode and analyze its performances in viscous liquids. The electrodes of the device are located on the film surface and normal to the c-axis of the ZnO film. The proposed device works near 1.44 GHz with a Q-factor up to 360 in air and 310 in water, which are higher than those of the quasi-shear thickness field excited FBAR. The resonant frequency is decreased with the increasing square root of the product of the viscosity and density with a linear dependence in the viscosity below 148.7 mPa s. The mass sensitivity of 670 Hz cm2 ng-1 was measured by monitoring the frequency change during the volatilization of saline solution loaded on the resonator. In addition, the levels of the noise and the mass resolutions were measured in various viscous environments. The proposed device yields the mass resolution of 670 Hz cm2 ng-1 and the high mass resolution of 0.06 ng cm-2. These results indicated that the lateral field excited ZnO FBAR had superior sensitivity for the bio-sensing applications in viscous biological liquids.

  4. Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes

    NASA Astrophysics Data System (ADS)

    Akgul, Guvenc; Aksoy Akgul, Funda; Emrah Unalan, Husnu; Turan, Rasit

    2016-04-01

    In this work, photovoltaic performance of Ga-doped ZnO thin film/Si NWs heterojunction diodes was investigated. Highly dense and vertically well-aligned Si NW arrays were successfully synthesised on a p-type (1 0 0)-oriented Si wafer through cost-effective metal-assisted chemical etching technique. Ga-doped ZnO thin films were deposited onto Si NWs via radio frequency magnetron sputtering to construct three-dimensional heterostructures. Photovoltaic characteristics of the fabricated diodes were determined with current density (J)-voltage (V) measurements under simulated solar irradiation of AM 1.5 G. The optimal open-circuit voltage, short-circuit current density, fill factor and power conversion efficiency were found to be 0.37 V, 3.30 mA cm-2, 39.00 and 0.62%, respectively. Moreover, photovoltaic diodes exhibited relatively high external quantum efficiency over the broadband wavelengths between 350 and 1100 nm interval of the spectrum. The observed photovoltaic performance in this study clearly indicates that the investigated device structure composed of Ga-doped ZnO thin film/Si NWs heterojunctions could facilitate an alternative pathway for optoelectronic applications in future, and be a promising alternative candidate for high-performance low-cost new-generation photovoltaic diodes.

  5. Realization of an efficient cholesterol biosensor using ZnO nanostructured thin film.

    PubMed

    Batra, Neha; Tomar, Monika; Gupta, Vinay

    2012-12-21

    A zinc oxide (ZnO) nanostructured thin film synthesized by a vapour phase transport technique on a platinum coated silicon (Pt/Si) substrate has been successfully utilized for the detection of cholesterol. Amperometric and photometric studies reveal that the prepared bioelectrode ChOx/ZnO/Pt/Si is highly sensitive to the detection of cholesterol over a wide concentration range, 0.12-12.93 mM (5-500 mg dl(-1)). The higher sensitivity is attributed to the large surface area of ZnO thin film for effective loading of ChOx besides its high electron communication capability. A relatively low value of the enzyme's kinetic parameter (Michaelis-Menten constant, 1.08 mM) indicates an enhanced affinity of the enzyme (ChOx) towards the analyte (cholesterol). The prepared bioelectrode is found to exhibit a long shelf life of more than 10 weeks, having negligible interference from the presence of other biomolecules present in human serum indicating potential application of the ZnO nanostructured thin film for cholesterol sensing.

  6. Characteristics of Sputtered ZnO Thin Films for an Inverted Organic Solar Cell.

    PubMed

    Park, Yong Seob; Park, Chul Min; Lee, Jaehyeong

    2016-05-01

    Several research groups have claimed high energy conversion efficiency in organic solar cells. However, it still has low efficiency and is unstable, because organic materials are easily oxidized by atmospheric humidity and UV light. In this work, ZnO thin film as the blocking layer attributed to the interference of the injection of the hole from the P3HT and no charge carrier recombination. We obtained the maximum power conversion efficiency of 1.9% under AM 1.5 G spectral illumination of 100 MWcm(-2), when we used a ZnO film of 60 nm and the optimized P3HT:PCBM, and Au as the back electrode to solve the reaction problem of Al electrode and to control the work function between the HOMO level of P3HT and the energy level of the metal electrode. Power conversion efficiency of inverted organic solar cell (IOSC) is significantly dependent on the thickness of the ZnO thin film deposited by unbalanced magnetron sputtering method. Also, the stability of IOSC is measured under ambient conditions.

  7. Synthesis and Characterization of Varying Concentrations of Ag-doped ZnO Thin Films

    NASA Astrophysics Data System (ADS)

    Hachlica, Justin; Wadie-Ibrahim, Patrick; Sahiner, M. Alper

    Silver doped ZnO is a promising compound for photovoltaic solar cell use. Doping this compound with varying amounts of silver will theoretically make this type of thin film more efficient by reducing the overall resistance and increasing the voltage and current output. The extent of this promise is being tested experimentally, by analysis of both the electrical and the surface roughness properties of the cells. Ag-doped Zinc Oxide is deposited by method of Pulsed Laser Deposition (PLD) onto Indium Tin Oxide (ITO) coated Glass. Annealing effects were also observed by varying the temperature at which the annealing occurred after synthesis of the sample. Thickness is confirmed by use of Ellipsometery. X-Ray Diffraction (XRD) measurements confirmed a ZnO crystal structure on the thin films. The active dopant carrier concentrations were determined using a Hall Effect Measuring System. Finally, the photovoltaic properties of the film are recorded by using a Keithley Source Meter. The structural characterization and electrical results of the effect of Ag doping on ZnO will then be discussed.

  8. Effects of free electrons and quantum confinement in ultrathin ZnO films: a comparison between undoped and Al-doped ZnO.

    PubMed

    Li, X D; Chen, T P; Liu, P; Liu, Y; Leong, K C

    2013-06-17

    Band gaps and exciton binding energies of undoped and Al-doped ZnO thin films were determined from optical absorption measurement based on the Elliott's exciton absorption theory. As compared to the undoped films, the doped films exhibit a band gap expansion and a reduction in the exciton binding energies due to the free electron screening effect, which suppresses the excitonic absorption and results in a blue shift of the absorption edge. The undoped and doped films show the same quantum size dependence, i.e. both the exciton binding energies and band gap energies increase with decreasing grain size of the oxides.

  9. Lattice distortion analysis of nonpolar a-plane $(11bar 20)$ GaN films by using a grazing-incidence X-ray diffraction technique

    NASA Astrophysics Data System (ADS)

    Seo, Yong Gon; Kim, Jihoon; Hwang, Sung-Min; Kim, Jihyun; Jang, Soohwan; Kim, Heesan; Baik, Kwang Hyeon

    2015-02-01

    This work examines the anisotropic microstructure and the lattice distortions of nonpolar a-plane GaN ( a-GaN) films by using the grazing-incidence X-ray diffraction technique. Faulted a-GaN films typically exhibit an in-plane anisotropy of the structural properties along the X-ray in-beam directions. For this reason, the anisotropic peak broadenings of the X-ray rocking curves (XRCs) were observed for various angle (phi) rotations for a-GaN films with and without SiN x interlayers. Analysis revealed the peak widths of the XRCs displayed an isotropic behavior for a nonpolar a-GaN bulk crystal. Thus, the in-plane anisotropy of the XRC peak widths for nonpolar a-GaN films apparently originates from the heteroepitaxial growth of the a-GaN layer on a foreign substrate. The lattice distortion analysis identified the presence of compressive strains in both the two in-plane directions (the c- and the m-axis), as well as a tensile strain along the normal growth direction. In addition, the observed frequency shifts in the Raman E2 (high) mode for the a-GaN films showed the existence of considerable in-plane compressive strain on both a-GaN films, as confirmed by the lattice distortion analysis performed using the grazing-incidence XRD method.

  10. Oxygen annealing effects on optical properties of ZnO and TiO nanocluster thin film

    NASA Astrophysics Data System (ADS)

    Souza, Ryan; Che, Hui; Tian, Yufeng; Qiang, You; Rodriguez, Rene; Lau, Lisa; Turner, Paul; Tenne, Dmitri

    2009-05-01

    Thin films of zinc oxide (ZnO) and titanium oxides (TiO) were deposited on Si (100) substrate by third generation nanocluster source. Post deposition Oxygen Annealing (OA) effects were evaluated by X-Ray diffraction (XRD), Raman spectroscopy, and photoluminescence (PL). As deposited, diameter of ZnO nanoclusters ˜24 nm and ZnO OA nanoclusters ˜30 nm. As deposited TiO clusters ˜10 nm in diameter, and TiO OA cluster ˜20 nm. XRD shows increased crystal quality and improved ZnO c-axis crystal growth. XRD shows improved stoichiometric TiO2 clusters and preferred anatase phase. Intensity of ZnO PL spectrum has temperature dependence from 10K to 300K. ZnO OA produces red-shifted PL peak, and there are no below-bandgap PL peaks. TiO has room temperature PL with UV peak ˜388 nm and visible peak ˜426 nm. ZnO OA nanoclusters show narrower, red shifted peak by ˜0.07eV compared to as deposited ZnO nanoclusters. This indicates increased average grain size and improved size homogeneity after annealing. This is confirmed by Raman spectra showing blue-shifted and narrower peak of the A1 (LO) phonon peak in ZnO OA sample. DOE-EPSCoR (DE-FG02-04ER46142) DOE-BES (DE-FG02-07ER46386).

  11. Van der Pauw Hall Measurement on Intended Doped ZnO Films for p-Type Conductivity

    NASA Astrophysics Data System (ADS)

    Guo, Yang; Liu, Yac-Ping; Li, Jun-Qiang; Zhang, Sheng-Li; Mei, Zeng-Xia; Du, Xiao-Long

    2010-06-01

    A Van der Pauw Hall measurement is performed on the intended doped ZnO films (Na doped ZnO) grown by using the molecular beam epitaxial method. All as-grown samples show n-type conductivity, whereas the annealed samples (annealing temperature 900° C) show ambiguous carrier conductivity type (n- and p-type) in the automatic Van der Pauw Hall measurement. A similar result has been observed in Li doped ZnO and in as-doped ZnO films by other groups before. However, by tracing the Hall voltage in the Van der Pauw Hall measurement, it is found that this alternative appearance of both n- and p-type conductivity is not intrinsic behavior of the intended doped ZnO films, but is due to the persistent photoconductivity effect in ZnO. The persistent photoconductivity effect would strongly affect the accurate determination of the carrier conductivity type of a highly resistive intended doped ZnO sample.

  12. Tailoring Energy Bandgap of Al Doped ZnO Thin Films Grown by Vacuum Thermal Evaporation Method.

    PubMed

    Vyas, Sumit; Singh, Shaivalini; Chakrabarti, P

    2015-12-01

    The paper presents the results of our experimental investigation pertaining to tailoring of energy bandgap and other associated characteristics of undoped and Al doped ZnO (AZO) thin film by varying the atomic concentration of Al in ZnO. Thin films of ZnO and ZnO doped with Al (1, 3, and 5 atomic percent (at.%)) were deposited on silicon substrate for structural characterization and on glass substrate for optical characterization. The dependence of structural and optical properties of Al doped ZnO on the atomic concentration of Al added to ZnO has been reported. On the basis of the experimental results an empirical formula has been proposed to calculate the energy bandgap of AZO theoretically in the range of 1 to 5 at.% of Al. The study revealed that AZO films are composed of smaller and larger number of grains as compared to pure ZnO counterpart and density of the grains was found to increase as the Al concentration increased (from 1 to 5 at.%). The transmittance in the visible region was greater than 90% and found to increase with increasing Al concentration up to 5 at.%. The optical bandgap was found to increase initially with increase in atomic concentration of Al concentration up to 3 at.% and decrease thereafter with increasing concentration of Al.

  13. Structure and thermoelectric properties of Al-doped ZnO films prepared by thermal oxidization under high magnetic field

    NASA Astrophysics Data System (ADS)

    Liu, Shiying; Peng, Sunjuan; Ma, Jun; Li, Guojian; Qin, Xuesi; Li, Mengmeng; Wang, Qiang

    2017-04-01

    This paper studies the effects of high magnetic field (HMF) on the structure, optical and thermoelectric properties of the doped ZnO thin films. The results show that both Al dopant and application of HMF can affect the crystal structure, surface morphology, elemental distribution and so on. The particles of the thin films become small and regular by doping Al. The ZnO films oxidized from the Au/Zn bilayer have needle structure. The ZnO films oxidized from the Au/Zn-Al bilayer transform to spherical from hexagonal due to the application of HMF. The transmittance decreases with doping Al because of the opaque of Al element and decreases with the application of HMF due to the dense structure obtained under HMF. Electrical resistivity (ρ) of the ZnO films without Al decreases with increasing measurement temperature (T) and is about 1.5 × 10-3 Ω·m at 210 °C. However, the ρ of the Al-doped ZnO films is less than 10-5 Ω·m. The Seebeck coefficient (S) of the films oxidized from the Au/Zn-Al films reduces with increasing T. The S values oxidized under 0 T and 12 T conditions are 2.439 μV/K and -3.415 μV/K at 210 °C, respectively. Power factor reaches the maximum value (3.198 × 10-4 W/m·K2) at 210 °C for the film oxidized under 12 T condition. These results indicate that the Al dopant and the application of HMF can be used to control structure and thermoelectric properties of doped ZnO films.

  14. Effect of doping concentration on the conductivity and optical properties of p-type ZnO thin films

    NASA Astrophysics Data System (ADS)

    Pathak, Trilok Kumar; Kumar, Vinod; Swart, H. C.; Purohit, L. P.

    2016-01-01

    Nitrogen doped ZnO (NZO) thin films were synthesized on glass substrates by the sol-gel and spin coating method. Zinc acetate dihydrates and ammonium acetate were used as precursors for zinc and nitrogen, respectively. X-ray diffraction study showed that the thin films have a hexagonal wurtzite structure corresponding (002) peak for undoped and doped ZnO thin films. The transmittance of the films was above 80% and the band gap of the film varies from 3.21±0.03 eV for undoped and doped ZnO. The minimum resistivity of NZO thin films was obtained as 0.473 Ω cm for the 4 at% of nitrogen (N) doping with a mobility of 1.995 cm2/V s. The NZO thin films showed p-type conductivity at 2 and 3 at% of N doping. The AC conductivity measurements that were carried out in the frequency range 10 kHz to 0.1 MHz showed localized conduction in the NZO thin films. These highly transparent ZnO films can be used as a possible window layer in solar cells.

  15. Surface modification of carbon post arrays by atomic layer deposition of ZnO film.

    PubMed

    Lee, Hyun Ae; Byun, Young-Chul; Singh, Umesh; Cho, Hyoung J; Kim, Hyoungsub

    2011-08-01

    The applicability of atomic layer deposition (ALD) process to the carbon microelectromechanical system technology was studied for a surface modification method of the carbon post electrodes. A conformal coating of the ALD-ZnO film was successfully demonstrated on the carbon post arrays which were fabricated by the traditional photolithography and subsequent two-step pyrolysis. A significant Zn diffusion into the underlying carbon posts was observed during the ALD process. The addition of a sputter-deposited ZnO interfacial layer efficiently blocked the Zn diffusion without altering the microstructure and surface morphology of the ALD-ZnO film.

  16. Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

    SciTech Connect

    Venkatesh, S.; Roqan, I. S.; Franklin, J. B.; Ryan, M. P.; McLachlan, M. A.; Alford, N. M.; Lee, J.-S.; Ohldag, Hendrik

    2015-01-07

    Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (

  17. Magnetotransmission measurement of ferromagnetism origin in Mn-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Zhang, Li; Yu, Wei; Wu, Shujie; Zhang, Jinchuan; Yang, Lihua; Fu, Guangsheng

    2008-12-01

    Magnetotransmission spectroscopy, the optical absorption measurement using circularly polarized light in the range from far infrared to near ultraviolet, is a direct method to study the energy structure of diluted magnetic semiconductors. In this paper, the magnetotransmission measurement is performed on the ferromagnetic Mn-doped ZnO films. The splitting between two circularly polarized light absorption edge is up to 10 meV under external magnetic field of 0.8 T at room temperature. The splitting is closely follows the magnetization of the films, as measured using Vibrating Sample Magnetometer. The observed ferromagnetic-type splitting of absorption edge is explained by antiferromagnetic p-d exchange interaction.

  18. Electrodeposition and characterization of ZnO thin films using sodium thiosulfate as an additive for photovoltaic solar cells

    NASA Astrophysics Data System (ADS)

    Rahal, Hassiba; Kihal, Rafiaa; Affoune, Abed Mohamed; Ghers, Mokhtar; Djazi, Faycal

    2017-06-01

    Zinc oxide thin films have been grown by electrodeposition technique onto Cu and ITO-coated glass substrates from an aqueous zinc nitrate solution with addition of sodium thiosulfate at 90 °C. The effects of sodium thiosulfate on the electrochemical deposition of ZnO were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were obtained at -0.60 V vs. SCE and characterized by XRD, SEM, FTIR, optical, photoelectrochemical and electrical measurements. Thickness of the deposited film was measured to be 357 nm. X-ray diffraction results indicated that the synthesized ZnO has a pure hexagonal wurtzite structure with a marked preferential orientation along (002) plane. FTIR results confirmed the presence of ZnO films at peak 558 cm-1. SEM images showed uniform, compact morphology without any cracks and films composed of large flower-like ZnO agglomerates with star-shape. Optical properties of ZnO reveal a high optical transmission (> 80 % ) and high absorption coefficient (α > {10}5 {{cm}}-1) in visible region. The optical energy band gap was found to be 3.28 eV. Photoelectrochemical measurements indicated that the ZnO films had n-type semiconductor conduction. Electrical properties of ZnO films showed a low electrical resistivity of 6.54 {{Ω }}\\cdot {cm}, carrier concentration of -1.3× {10}17 {{cm}}-3 and mobility of 7.35 cm2 V-1 s-1. Project supported by the Algerian Ministry of Higher Education and Scientific Research, Algeria (No. J0101520090018).

  19. Transparent conductive Al-doped ZnO thin films grown at room temperature

    SciTech Connect

    Wang Yuping; Lu Jianguo; Bie Xun; Gong Li; Li Xiang; Song Da; Zhao Xuyang; Ye Wenyi; Ye Zhizhen

    2011-05-15

    Aluminum-doped ZnO (ZnO:Al, AZO) thin films were prepared on glass substrates by dc reactive magnetron sputtering from a Zn-Al alloy target at room temperature. The effects of the Ar-to-O{sub 2} partial pressure ratios on the structural, electrical, and optical properties of AZO films were studied in detail. AZO films grown using 100:4 to 100:8 Ar-to-O{sub 2} ratio result in acceptable quality films with c-axis orientated crystals, uniform grains, 10{sup -3} {Omega} cm resistivity, greater than 10{sup 20} cm{sup -3} electron concentration, and high transmittance, 90%, in the visible region. The lowest resistivity of 4.11x10{sup -3} {Omega} cm was obtained under the Ar-to-O{sub 2} partial pressure ratio of 100:4. A relatively strong UV emission at {approx}3.26 eV was observed in the room-temperature photoluminescence spectrum. X-ray photoelectron spectroscopy analysis confirmed that Al was introduced into ZnO and substitutes for Zn and doped the film n-type.

  20. Confinement effects in ultrathin ZnO polymorph films: Electronic and optical properties

    NASA Astrophysics Data System (ADS)

    Sponza, Lorenzo; Goniakowski, Jacek; Noguera, Claudine

    2016-05-01

    Relying on generalized-gradient and hybrid first-principles simulations, this work provides a complete characterization of the electronic properties of ZnO ultrathin films, cut along the body-centered-tetragonal(010), cubane(100), hexagonal boron nitride(0001), zinc-blende(110), and wurtzite (10 1 ¯0 ) and (0001) orientations. The characteristics of the local densities of states are analyzed in terms of the reduction of the Madelung potential on undercoordinated atoms and surface states/resonances appearing at the top of the valence band and bottom of the conduction band. The gap width in the films is found to be larger than in the corresponding bulks, which is assigned to quantum confinement effects. The components of the high-frequency dielectric constant are determined and the absorption spectra of the films are computed. They display specific features just above the absorption threshold due to transitions from or to the surface resonances. This study provides a first understanding of finite-size effects on the electronic properties of ZnO thin films and a benchmark which is expected to foster experimental characterization of ultrathin films via spectroscopic techniques.

  1. Significant mobility enhancement in extremely thin highly doped ZnO films

    SciTech Connect

    Look, David C.; Heller, Eric R.; Yao, Yu-Feng; Yang, C. C.

    2015-04-13

    Highly Ga-doped ZnO (GZO) films of thicknesses d = 5, 25, 50, and 300 nm, grown on 160-nm ZnO buffer layers by molecular beam epitaxy, had 294-K Hall-effect mobilities μ{sub H} of 64.1, 43.4, 37.0, and 34.2 cm{sup 2}/V-s, respectively. This extremely unusual ordering of μ{sub H} vs d is explained by the existence of a very high-mobility Debye tail in the ZnO, arising from the large Fermi-level mismatch between the GZO and the ZnO. Scattering theory in conjunction with Poisson analysis predicts a Debye-tail mobility of 206 cm{sup 2}/V-s at the interface (z = d), falling to 58 cm{sup 2}/V-s at z = d + 2 nm. Excellent fits to μ{sub H} vs d and sheet concentration n{sub s} vs d are obtained with no adjustable parameters.

  2. Hydrothermal-electrochemical growth of heterogeneous ZnO: Co films

    NASA Astrophysics Data System (ADS)

    Yilmaz, Ceren; Unal, Ugur

    2017-08-01

    This study demonstrates the preparation of heterogeneous ZnO: Co nanostructures via hydrothermal-electrochemical deposition at 130 °C and -1.1 V (vs Ag/AgCl (satd)) in dimethyl sulfoxide (DMSO)-H2O mixture. Under the stated conditions, ZnO: Co nanostructures grow preferentially along (002) direction. Strength of directional growth progressively increases with the increasing concentration of Co(II) in the deposition bath. Films are composed of hexagonal Wurtzite ZnO, metallic cobalt, and mixed cobalt oxide on the surface and cobalt(II) oxide in deeper levels. Increasing the Co(II) concentration in the deposition bath results in different morphological features as well as phase separation. Platelets, sponge-like structures, cobalt-rich spheres, microislands of cobalt-rich spheres which are interconnected by ZnO network can be synthesized by adjusting [Co(II)]: [Zn(II)] ratio. Growth mechanisms giving rise to these particular structures, surface morphology, crystal structure, phase purity, chemical binding characteristics, and optical properties of the deposits are discussed in detail.

  3. A nano-structured ZnO film as diagnostic X-ray sensor

    SciTech Connect

    Valenca, Claudia Patricia Varela; Liborio da Silveira, Matheus Augusto; Macedo, Marcelo Andrade; Pereira dos Santos, Luiz Antonio

    2015-07-01

    Currently some international organizations such as WHO and IAEA have shown concerns about the quality of diagnostic services in clinics and hospitals that use ionizing radiation. In fact, the IAEA recommend that the characteristics of the X-ray beam must be adjusted to obtain the highest quality of the radiographic image with the minimum exposure to the patient. Several types of detectors may be used for monitoring X-ray beams, such as: ionization chamber, photodiode, phototransistor, among others. Recently nano-structured films made of various types of metal oxide materials have been used for various technological applications. Accordingly, the purpose of this paper is to present a sort of device based on a nano-structured zinc oxide (ZnO) to operate as a diagnostic X-ray sensor. By depositing a thin film on the glass substrate some ZnO semiconductor samples were built by sputtering techniques and then mounted in a BNC type connector to perform the electrical characterization. To test the device, we choose a standard X-Ray beam, the RQR9 radiation quality, which is normally used as the tool and condition for calibrating diagnostic X-Ray instruments in the energy range of computed tomography, in accordance with the stated requirements of IEC 61267. A 6430 sub-femto-ammeter, Keithley, was used as electrometer to perform the output readings and simultaneously bias the ZnO sensor. Analysis of the angular dependence and the dose rate were performed to evaluate how the device responds under the RQR9 radiation spectra. Although the results have shown that the ZnO film presents a certain angular dependence, if an angle of incidence of photons is selected, the device displays reproducibility as X-ray sensor and has the feature of radiation hardness unlike other types of semiconductor electronic devices typically used as an X-ray detector. (authors)

  4. Highly stable and textured hydrogenated ZnO thin films

    NASA Astrophysics Data System (ADS)

    Myong, Seung Yeop; Lim, Koeng Su

    2003-05-01

    We investigated intentionally hydrogenated zinc oxide (ZnO:H) fabricated by combining photoassisted metalorganic chemical vapor deposition and mercury-sensitized hydrogen addition methods. We found that intentionally incorporated hydrogen plays an important role in n-type conduction as a donor, improving free carrier concentration and electrical stability. We simultaneously obtained improved surface roughness of the ZnO:H film due to an enhancement of (112¯0) orientation. The high-quality ZnO:H film is promising as a back reflector material for thin-film solar cells.

  5. Velocity surface measurements for ZnO films over /001/-cut GaAs

    NASA Technical Reports Server (NTRS)

    Kim, Yoonkee; Hunt, William D.; Liu, Yongsheng; Jen, Cheng-Kuei

    1994-01-01

    A potential application for a piezoelectic film deposited on a GaAs substrate is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the filmed structure is critical for the optimum design of such devices. In this article, the measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metallized ZnO/SiO2 or Si3N4/GaAs /001/-cut samples are reported using two different techniques: (1) knife-edge laser probe, (2) line-focus-beam scanning acoustic microscope. Comparisons, such as measurement accuracy and tradeoffs, between the former (dry) and the latter (wet) method are given. It is found that near the group of zone axes (110) propagation direction the autocollimating SAW property of the bare GaAs changes into a noncollimating one for the layered structure, but a reversed phenomenon exists near the group of zone axes (100) direction. The passivation layer of SiO2 or Si3N4 (less than 0.2 micrometer thick) and the metallization layer change the relative velocity but do not significantly affect the velocity surface. On the other hand, the passivation layer reduces the propagation loss by 0.5-1.3 dB/microseconds at 240 MHz depending upon the ZnO film thickness. Our SAW propagation measurements agree well with theorectical calculations. We have also obtained the anisotropy factors for samples with ZnO films of 1.6, 2.8, and 4.0 micrometer thickness. Comparisons concerning the piezoelectric coupling and acoustic loss between dc triode and rf magnetron sputtered ZnO films are provided.

  6. The crystalline structure of copper phthalocyanine films on ZnO(1100).

    PubMed

    Cruickshank, Amy C; Dotzler, Christian J; Din, Salahud; Heutz, Sandrine; Toney, Michael F; Ryan, Mary P

    2012-09-05

    The structure of copper phthalocyanine (CuPc) thin films (5-100 nm) deposited on single-crystal ZnO(1100) substrates by organic molecular beam deposition was determined from grazing-incidence X-ray diffraction reciprocal space maps. The crystal structure was identified as the metastable polymorph α-CuPc, but the molecular stacking was found to vary depending on the film thickness: for thin films, a herringbone arrangement was observed, whereas for films thicker than 10 nm, coexistence of both the herringbone and brickstone arrangements was found. We propose a modified structure for the herringbone phase with a larger monoclinic β angle, which leads to intrastack Cu-Cu distances closer to those in the brickstone phase. This structural basis enables an understanding of the functional properties (e.g., light absorption and charge transport) of (opto)electronic devices fabricated from CuPc/ZnO hybrid systems.

  7. The electrical stability of In-doped ZnO thin films deposited by RF sputtering

    NASA Astrophysics Data System (ADS)

    Sun, Hui; Jen, Shien-Uang; Chen, Sheng-Chi; Ye, Shiau-Shiang; Wang, Xin

    2017-02-01

    The electrical stability of transparent conductive oxides is an important criterion for evaluating their performance, especially when they are employed at elevated temperatures or in long-term operation. In this work, indium-doped ZnO thin films with various doping concentrations were prepared by RF sputtering. The electrical properties, electrical thermal stability, and time stability of films with differing indium contents were investigated. The results showed that the degradation of the films’ conductivity is primarily attributable to the reduction in oxygen vacancies at high temperatures under oxygenated conditions. The aggregation of indium atoms, which cannot replace Zn3+ cations at temperatures above 200 °C, can improve the carrier concentration. Further reaction with oxygen degraded the performance of the films due to the formation of insulating oxides. Long-term analysis showed the IZO films to have quite stable electrical properties. Their conductivity remained almost unchanged after two months at room temperature under normal atmospheric conditions.

  8. Growth of ZnO thin films doped with (Mn & Co) by spin coating technique

    SciTech Connect

    Dhruvashi,; Rawat, Kusum; Shishodia, P. K.

    2016-05-06

    ZnO thin films co-doped with Mn and Co have been deposited on glass substrates by spin coating technique. Structural, optical and magnetic properties have been investigated as a function of dopant concentration. X-ray diffraction has confirmed the growth of c-axis oriented polycrystalline thin films. No impurity phases have been detected corresponding to metal oxides within the limitation of x-ray diffraction. The optical bandgap has been evaluated from tauc’s plots derived from the transmittance spectra in the wavelength range 350-900 nm. Surface morphology of the films has been observed by field emission scanning electron microscope. The field dependence of magnetization (M-H curve) measured by vibrating sample magnetometer shows the ferromagnetic behavior of the films at room temperature. The magnetization versus temperature (M-T) curve has also been measured under zero field cooled and field cooled conditions.

  9. Structural and nonlinear optical behavior of Ag-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Tan, Ming-Yue; Yao, Cheng-Bao; Yan, Xiao-Yan; Li, Jin; Qu, Shu-Yang; Hu, Jun-Yan; Sun, Wen-Jun; Li, Qiang-Hua; Yang, Shou-Bin

    2016-01-01

    We present the structural and nonlinear optical behavior of Ag-doped ZnO (AZO) films prepared by magnetron sputtering. The structural of AZO films are systematically investigated by X-ray diffraction (XRD) and scanning electronic microscopy (SEM), respectively. The results show that AZO films can still retain a wurtzite structure, although the c-axis as preferred orientation is decreased by Ag doping. As the amounts of the Ag dopant were increased, the crystallinity as well as the absorptivity and optical band gap were increased. Moreover, the nonlinear optical characterized of the AZO films was studied using Z-scan technique. These samples show self-defocusing nonlinearity and good nonlinear absorption behavior which increases with increasing Ag volume fraction. AZO is a potential nanocomposite material for the development of nonlinear optical devices with a relatively small limiting threshold.

  10. Photocontrollable water permeation on the micro/nanoscale hierarchical structured ZnO mesh films.

    PubMed

    Tian, Dongliang; Zhang, Xiaofang; Zhai, Jin; Jiang, Lei

    2011-04-05

    Most research of responsive surfaces mainly focus on the wettability transition on different solid substrate surfaces, but the dynamic properties of the micro/nanostructure-enhanced responsive wettability on microscale pore arrays are lacking and still remain a challenge. Here we report the photocontrollable water permeation on micro/nanoscale hierarchical structured ZnO-coated stainless steel mesh films. Especially, for aligned ZnO nanorod array-coated stainless steel mesh film, the film shows good water permeability under irradiation, while it is impermeable to water after dark storage. A detailed investigation indicates that the special nanostructure and the appropriate size of the microscale mesh pores play a crucial role in the excellent controllability over water permeation. The excellent controllability of water permeation on this film is promising in various important applications such as filtration, microreactor, and micro/nano fluidic devices. This work may provide interesting insight into the design of novel functional devices that are relevant to surface wettability.

  11. Annealing induced reorientation of crystallites in Sn doped ZnO films

    NASA Astrophysics Data System (ADS)

    Ravichandran, K.; Vasanthi, M.; Thirumurugan, K.; Sakthivel, B.; Karthika, K.

    2014-11-01

    Tin doped ZnO thin films were prepared by employing a simplified spray pyrolysis technique using a perfume atomizer and subsequently annealed under different temperatures from 350 °C to 500 °C in steps of 50 °C. The structural, optical, electrical, photoluminescence and surface morphological properties of the as-deposited films were studied and compared with that of the annealed films. The X-ray diffraction studies showed that as-deposited film exhibits preferential orientation along the (0 0 2) plane and it changes in favour of (1 0 0) plane after annealing. The increase in crystallite size due to annealing is explained on the basis of Ostwald ripening effect. It is found that the optical transmittance and band gap increases with increase in annealing temperature. A slight decrease in resistivity caused by annealing is discussed in correlation with annealing induced defect modifications and surface morphology.

  12. Synthesis and characterization of porous structured ZnO thin film for dye sensitized solar cell applications

    SciTech Connect

    Marimuthu, T.; Anandhan, N. Mummoorthi, M.; Dharuman, V.

    2016-05-23

    Zinc oxide (ZnO) and zinc oxide/eosin yellow (ZnO/EY) thin films were potentiostatically deposited onto fluorine doped tin oxide (FTO) glass substrate. Effect of eosin yellow dye on structural, morphological and optical properties was studied. X-ray diffraction patterns, micro Raman spectra and photoluminescence (PL) spectra reveal hexagonal wurtzite structure with less atomic defects in 101 plane orientation of the ZnO/EY film. Scanning electron microscopy (SEM) images show flower for ZnO and porous like structure for ZnO/EY thin film, respectively. DSSC was constructed and evaluated by measuring the current density verses voltage curve.

  13. Synthesis and characterization of porous structured ZnO thin film for dye sensitized solar cell applications

    NASA Astrophysics Data System (ADS)

    Marimuthu, T.; Anandhan, N.; Mummoorthi, M.; Dharuman, V.

    2016-05-01

    Zinc oxide (ZnO) and zinc oxide/eosin yellow (ZnO/EY) thin films were potentiostatically deposited onto fluorine doped tin oxide (FTO) glass substrate. Effect of eosin yellow dye on structural, morphological and optical properties was studied. X-ray diffraction patterns, micro Raman spectra and photoluminescence (PL) spectra reveal hexagonal wurtzite structure with less atomic defects in 101 plane orientation of the ZnO/EY film. Scanning electron microscopy (SEM) images show flower for ZnO and porous like structure for ZnO/EY thin film, respectively. DSSC was constructed and evaluated by measuring the current density verses voltage curve.

  14. Real structure of the ZnO epitaxial films on (0001) leucosapphire substrates coated by ultrathin gold layers

    SciTech Connect

    Muslimov, A. E. Butashin, A. V.; Kolymagin, A. B.; Vasilyev, A. L.; Kanevsky, V. M.

    2016-01-15

    The real structure of ZnO films formed by magnetron sputtering on (0001) leucosapphire substrates coated by an ultrathin (less than 0.7 nm) Au buffer layer has been studied by high-resolution microscopy. It is shown that modification of the leucosapphire substrate surface by depositing ultrathin Au layers does not lead to the formation of Au clusters at the film–substrate interface but significantly improves the structural quality of ZnO epitaxial films. It is demonstrated that the simplicity and scalability of the technique used to modify the substrate surface in combination with a high (above 2 nm/s) film growth rate under magnetron sputtering make it possible to obtain high-quality (0001) ZnO epitaxial films with an area of 5–6 cm{sup 2}.

  15. Fabrication of Sb-doped p-type ZnO thin films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Pan, Xinhua; Ye, Zhizhen; Li, Jiesheng; Gu, Xiuquan; Zeng, Yujia; He, Haiping; Zhu, Liping; Che, Yong

    2007-03-01

    p-Type ZnO thin films have been realized via monodoping antimony (Sb) acceptor by using pulsed laser deposition. The obtained films with the best electrical properties show a hole concentration in the order of 10 18 cm -3 and resistivity in the range of 2-4 Ω cm. X-ray diffraction measurements revealed that all the films possessed a good crystallinity with (0 0 2)-preferred orientation. Guided by X-ray photoemission spectroscopy analysis and a model for large-sized-mismatched group-V dopant in ZnO, an Sb Zn-2V Zn complex is believed to be the most possible acceptor in the Sb-doped p-type ZnO thin films.

  16. Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Zhai, Chen-Hui; Zhang, Rong-Jun; Chen, Xin; Zheng, Yu-Xiang; Wang, Song-You; Liu, Juan; Dai, Ning; Chen, Liang-Yao

    2016-09-01

    The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.

  17. SiNx Charge Trap Nonvolatile Memory Based on ZnO Thin Film Transistor Prepared by Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Kim, E.; Lee, K.; Kim, D.; Parsons, G. N.; Park, K.

    2011-12-01

    We fabricated a nonvolatile thin film transistor (TFT) memory with SiNx charge traps using a ZnO thin film as an active channel layer. The thin film of ZnO was deposited by using atomic layer deposition process at TALD = 125 °C. The ZnO films were investigated by X-ray diffraction and X-ray photoemission measurements. The electrical measurements of the nonvolatile TFT memory showed a field-effect mobility of 2.95 cm2 V-1 s-1, a threshold voltage of -7.24 V, a subthreshold swing of 1.7 V/dec, and an on/off ratio of 3.4×105. From the C-V measurement, the memory window of 2 V was obtained.

  18. Fabrication and photoelectric properties of Er3+ and Yb3+ co-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Feng, Wei; Wang, Xiangfu; Meng, Lan; Yan, Xiaohong

    2016-01-01

    In this paper, the Er3+ and Yb3+ co-doped ZnO films deposited by a novel thermal decomposition method under different annealing temperature process have been reported. The effects of annealing temperature on the morphology and properties of the films are systematically studied. The resulting spectra demonstrate that the Er3+ and Yb3+ co-doped ZnO films possessed the property of up-conversion, converting IR light into visible light that can be absorbed by amorphous silicon solar cell. After all, inner photoelectric effect of the Er3+ and Yb3+ co-doped ZnO films in the amorphous as a light scattering layer are also found with an infrared 980 nm laser as excitation source.

  19. Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition.

    PubMed

    Zhai, Chen-Hui; Zhang, Rong-Jun; Chen, Xin; Zheng, Yu-Xiang; Wang, Song-You; Liu, Juan; Dai, Ning; Chen, Liang-Yao

    2016-12-01

    The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.

  20. The structure, photoluminescence, optical and magnetic properties of ZnO films doped with ferromagnetic impurities

    NASA Astrophysics Data System (ADS)

    Gritskova, E. V.; Mukhamedshina, D. M.; Mit', K. A.; Dolya, N. A.; Abdullin, Kh. A.

    2009-12-01

    In this paper we report on ZnO-CoO thin films grown by sol-gel technology with using different solvent. As precursors zinc acetate dehydrate (Zn(CH3COO)2·2H2O), cobalt acetate tetrahydrate (Co(CH3COO)2·4H2O) as well as manganese chloride (MnCl2) were used. The films grown from solvent with methanol have a highly preferred orientation along the (1 0 0) plane. The films deposited from C=0.5 and 0.7 mol/l solvent with isopropanol and monoethanolamin and in smaller degree the C=0.3 mol/l film consist of disordered crystallites whereas the C=0.1 mol/l film has the intensive (0 0 2) peak, revealing a more obvious [0 0 2] preferred orientation. The all obtained films are highly transparent. The PL of ZnO-CoO films are more intensive in ultra-violet region in comparison the PL of ZnO film. The ESR spectra of ZnO-CoO multilayer films were investigated.

  1. Photocatalytic activities of wet oxidation synthesized ZnO and ZnO-TiO2 thick porous films

    NASA Astrophysics Data System (ADS)

    Chen, Ruiqun; Han, Jie; Yan, Xiaodong; Zou, Chongwen; Bian, Jiming; Alyamani, Ahmed; Gao, Wei

    2011-05-01

    Highly porous zinc oxide (ZnO) film was produced by using reactive magnetron sputtering zinc target followed by wet oxidation. Titanium dioxide (TiO2) was mixed to the porous films by using either TiO2 target magnetron sputter deposition or sol-spin method. The film thickness could reach 50 μm with uniform porosity. On the sputtering prepared ZnO-TiO2 film surface, fine nanorods with small anatase TiO2 nano-clusters on the tips were observed by SEM and TEM, and the titanium (Ti) composition was determined by XPS as 0.37%. The sol-spin treatment could increase the Ti composition to 4.9%, with reduced pore size compared to the untreated ZnO porous film. Photoluminescence measurements showed that the Ti containing porous film has strong ultraviolet-visible light emission. In the photo-catalysis testing, ZnO and ZnO-TiO2 have similar photo-catalysis activity under 365 nm UV irradiation, but under visible light, the photocatalysis activities of ZnO-TiO2 films were twice higher than that of ZnO porous film, implying promising applications of this porous oxide composite for industrial and dairy farm wastewater treatment.

  2. X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a-plane sapphire by metalorganic vapour phase epitaxy

    NASA Astrophysics Data System (ADS)

    Martínez-Tomás, M. C.; Zúñiga-Pérez, J.; Vennéguès, P.; Tottereau, O.; Muñoz-Sanjosé, V.

    2007-07-01

    In the frame of studying II VI oxides of interest in optoelectronic technologies, the structural properties of CdO films grown by metalorganic vapour phase epitaxy on a-plane sapphire substrates have been analysed. The study has been performed by means of X-ray diffraction and cross-sectional transmission electron microscopy measurements. CdO films have been found to grow along [111] with the presence of twinned domains. Asymmetrical reflections have been used to study the crystalline quality of the twinned domains, independent of each other, as well as to determine their relative population. The analysis has been made as a function of growth conditions: VI/II precursors molar ratio and growth temperature.

  3. Preferential orientation growth of ITO thin film on quartz substrate with ZnO buffer layer by magnetron sputtering technique

    NASA Astrophysics Data System (ADS)

    Du, Wenhan; Yang, Jingjing; Xiong, Chao; Zhao, Yu; Zhu, Xifang

    2017-07-01

    In order to improve the photoelectric transformation efficiency of thin-film solar cells, one plausible method was to improve the transparent conductive oxides (TCO) material property. In-doped tin oxide (ITO) was an important TCO material which was used as a front contact layer in thin-film solar cell. Using magnetron sputtering deposition technique, we prepared preferential orientation ITO thin films on quartz substrate. XRD and SEM measurements were used to characterize the crystalline structure and morphology of ITO thin films. The key step was adding a ZnO thin film buffer layer before ITO deposition. ZnO thin film buffer layer increases the nucleation center numbers and results in the (222) preferential orientation growth of ITO thin films.

  4. Antibacterial and physical properties of poly(vinyl chloride)-based film coated with ZnO nanoparticles.

    PubMed

    Li, X H; Xing, Y G; Li, W L; Jiang, Y H; Ding, Y L

    2010-06-01

    Nanoparticles of ZnO and their application in coating systems have attracted a great deal of attention in recent years because of its multifunction property, especially antibacterial activity. In this study, antibacterial and physical properties of poly(vinyl chloride) (PVC) based film coated with ZnO nanoparticles were investigated. It was found that the antibacterial action should be attributed to the killing effect property of ZnO nanoparticles. The ZnO-coated films treated by shaking for 10 h exhibited a similar high antibacterial activity against Escherichia coli and Staphylococcus aureus as the untreated ZnO-coated films. This result indicated that the ZnO nanoparticles adhered very well to the plastic film. The antibacterial activity of the ZnO-coated film to inactivate E. coli or S. aureus was improved by UV irradiation. The analysis of physical properties of the ZnO-coated films revealed that the nano-ZnO particles showed less effects on the tensile strength and elongation at break of the film. The ultraviolet (UV) light fastness of the ZnO-coated PVC film was improved, which may be attributed to the absorption of ZnO nanoparticles against UV light. Water vapor transmission of the ZnO-coated film decreased from 128 to 85 g/m(2) · 24 h, whereas the thickness of film increased from 6.0 μm with increasing the amount of nano-ZnO particles coated from 0 to 187.5 μg/cm(2). This research revealed that the PVC film coated with nano-ZnO particles has a good potential to be used as an active coating system for food packaging.

  5. Pulsed laser deposition of ZnO thin films decorated with Au and Pd nanoparticles with enhanced acetone sensing performance

    NASA Astrophysics Data System (ADS)

    Alexiadou, M.; Kandyla, M.; Mousdis, G.; Kompitsas, M.

    2017-04-01

    We fabricate and compare nanocomposite thin-film ZnO chemoresistive acetone sensors with gold or palladium nanoparticles on the surface, at low operating temperatures. The sensors are fabricated by pulsed laser deposition and operate in the temperature range 159-200 °C. The ZnO films are polycrystalline, crystallizing mainly at the (002) and (101) orientations of the hexagonal phase. The nanocomposite ZnO:Au and ZnO:Pd sensors have a lower detection limit and show a response enhancement factor between 2 and 7, compared with pure ZnO sensors. The ZnO:Pd sensor performs better than the ZnO:Au sensor. The ZnO:Pd sensor sensitivity increases with the amount of palladium on the surface, while it remains roughly unchanged with the ZnO thickness. The lowest acetone concentration we detect is 26 ppm for the operating temperature of 200 °C.

  6. Optical, magnetic and structural properties of Cr-doped ZnO thin films by sol–gel dip-coating method

    NASA Astrophysics Data System (ADS)

    Kayani, Zohra N.; Siddiq, Marya; Riaz, Saira; Naseem, Shahzad

    2017-09-01

    Cr-doped ZnO thin films are deposited by sol–gel dip coating. The effect of Cr on the structural, magnetic and optical parameters of zinc oxide films is studied. X-ray diffraction patterns of Cr-doped ZnO thin films are found to have a hexagonal wurtzite structure of ZnO. The bandgap energy of the Cr-doped ZnO thin films is calculated by the Tauq method. Crystallite size is evaluated by the Scherrer and Williamson–Hall relation. Both show that crystallite size enhances with an enhancement in Cr doping. The bandgap energy of the Cr-doped ZnO thin films is decreased by increasing the Cr dopant. The films are found to be ferromagnetic with a decrease in magnetic properties with an increase in Cr content.

  7. Enhancement of intrinsic emission from ultrathin ZnO films using Si nanopillar template

    PubMed Central

    2012-01-01

    Highly efficient room-temperature ultraviolet (UV) luminescence is obtained in heterostructures consisting of 10-nm-thick ultrathin ZnO films grown on Si nanopillars fabricated using self-assembled silver nanoislands as a natural metal nanomask during a subsequent dry etching process. Atomic layer deposition was applied for depositing the ZnO films on the Si nanopillars under an ambient temperature of 200°C. Based on measurements of photoluminescence (PL), an intensive UV emission corresponding to free-exciton recombination (approximately 3.31 eV) was observed with a nearly complete suppression of the defect-associated, broad-range visible emission peak. As compared to the ZnO/Si substrate, the almost five-times-of-magnitude enhancement in the intensity of PL, which peaked around 3.31 eV in the present ultrathin ZnO/Si nanopillars, is presumably attributed to the high surface/volume ratio inherent to the Si nanopillars. This allowed considerably more amount of ZnO material to be grown on the template and led to markedly more efficient intrinsic emission. PMID:22616734

  8. Effect of Er concentration on surface and optical properties of K doped ZnO sol-gel thin films

    NASA Astrophysics Data System (ADS)

    Vettumperumal, R.; Kalyanaraman, S.; Thangavel, R.

    2015-07-01

    The K doped and (K, Er) codoped ZnO thin films were prepared on glass substrate by sol-gel method. The microstructures and optical properties of the doped and codoped films are characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectra (EDX), atomic force microscope (AFM) and UV-Vis spectroscopy. All the doped and codoped films have polycrystalline nature with wurtzite structure and strong c-axis orientation. A decreases in particle size is observed with the increase of Er concentration in K doped ZnO films. The SEM and AFM images show wrinkle structure formation on the film surfaces and its width increases with respect to Er concentration. Observed average surface roughness of the K doped films is 9.79 nm and (K, Er) codoped film is 14.80 nm. The surface morphology properties of the films are analyzed by fractal dimension parameter. Doped and codoped elemental composition is confirmed from the EDX spectra. The observed average transmittance of doped and codoped films is around 85% and a blue shift of the band is observed after the Er doping in K doped ZnO films. The Urbach tail parameter and optical constants such as refractive index, extinction coefficient, and dielectric constants have been calculated for these films. The dispersion parameters such as single-oscillator energy and dispersive energy are discussed in terms of the single-oscillator Wemple-DiDomenico model.

  9. Photocatalytic degradation of toluene using sprayed N-doped ZnO thin films in aqueous suspension.

    PubMed

    Shinde, S S; Bhosale, C H; Rajpure, K Y

    2012-08-01

    Thin films of N-doped ZnO are synthesized via spray pyrolysis technique in aqueous medium using zinc acetate and ammonium acetate as precursors. Influence of N doping onto photochemical, structural, morphological, optical and thermal properties have been investigated. Structural analysis depicts hexagonal (wurtzite) crystal structure. The effect of N doping on the photocatalytic activity of N-doped ZnO in the degradation of toluene is studied and results are compared with pure ZnO. The results show that the rate of degradation of toluene over N-doped ZnO is higher as compared to that of pure ZnO and increases with increasing N doping up to 10 at.% and then decreases. The enhancement of photocatalytic activity of N-doped ZnO thin films is mainly due to their capability for reducing the electron hole pair recombination. The photocatalytic mineralization of toluene in aqueous solution has been studied by measuring COD and TOC. Possible reaction mechanism pathways during toluene degradation over N-doped ZnO has been proposed.

  10. Nitrogen [N]-incorporated ZnO piezoelectric thin films and their application for ultra-small film bulk acoustic wave resonator device fabrication

    SciTech Connect

    Lee, Eunju; Zhang Ruirui; Yoon, Giwan

    2011-10-01

    Nitrogen [N]-incorporated ZnO films with columnar grains of a preferred c-axis orientation were deposited on p-Si (100) wafers, using an RF magnetron sputter deposition technique. For the N incorporation into the ZnO films, an N{sub 2}O gas was used as a doping source and also various process conditions such as N{sub 2}O gas fraction and RF power were applied. Besides, some of the ZnO films were treated with the post annealing process. And then, the micro-structural characteristics of the N-incorporated ZnO films were investigated by a scanning electron microscope, an X-ray diffractometer, and an atomic force microscope techniques. Finally, employing the N-incorporated ZnO films, the solidly mounted resonator-type film bulk acoustic wave resonator devices were fabricated and their resonance characteristics were extracted. As a result, an excellent return loss (S{sub 11}) of- 63 dB was observed at{approx} 0.6 GHz, better than ever reported.

  11. RF Power Effect on the Properties of Sputtered ZnO Films for Channel Layer Applications in Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Medina-Montes, M. I.; Arizpe-Chávez, H.; Baldenegro-Pérez, L. A.; Quevedo-López, M. A.; Ramírez-Bon, R.

    2012-07-01

    ZnO films were processed by radiofrequency (RF) magnetron sputtering under argon gas environment at room temperature, varying the RF power (90 W, 100 W, 150 W, and 200 W), on p-Si/SiO2 substrates. Structural, morphological, and electrical characteristics of the ZnO films were determined using several experimental techniques, and they showed a clear relationship with the RF power. All the ZnO films exhibited a hexagonal wurtzite polycrystalline structure with (002) preferred orientation. Atomic force microscopy (AFM) revealed the formation of grains or clusters as a result of the accumulation of nanoparticles, and the grain size increased with increasing power. An ascending trend of the root-mean-square surface roughness of the films with increasing power was also observed. ZnO film thickness and refractive index were determined by spectroscopy ellipsometry. In agreement with AFM results, the observed increase of refractive index from 2.15 to 2.44 was the result of improved film compactness on increasing the deposition power. The electrical resistivity ranged from 3.5 × 103 Ω-cm for ZnO film deposited at 200 W to 5 × 107 Ω-cm for that deposited at 100 W. The sputtered ZnO films were employed as the active channel layer in thin-film transistors, and the impact of the deposition power on device performance was studied. As the power was increased, the field-effect mobility increased from ~0.1 cm2/V s to 4.2 cm2/V s, the threshold voltage decreased from 33.5 V to 10.7 V, and the I on/ I off ratio decreased from 106 to 102.

  12. Structural and optical characteristics of the hexagonal ZnO films grown on cubic MgO (001) substrates.

    PubMed

    Shen, Xiangqian; Zhou, Hua; Li, Yaping; Kang, Junyong; Zheng, Jin-Cheng; Ke, Shanming; Wang, Qingkang; Wang, Hui-Qiong

    2016-11-01

    In this Letter, we report on the structural and optical characteristics of ZnO films with a wurtzite structure grown on MgO (001) substrates with cubic structures. The ZnO films were prepared through the molecular beam epitaxy method, and growth orientation transformation from [0001] to [10-10] direction was observed with the change of growth temperature and thickness. The x-ray diffraction pole figures and in situ RHEED patterns demonstrated that the rotational relationship among grains within the ZnO films appeared in a typical two-fold rotation of about 30° for the [0001] growth orientation and four-fold rotation of about 30° or 60° for the [10-10] growth orientation, respectively. Last, we investigated their optical properties through measuring the transmission and photoluminescence spectra of the ZnO films, which showed the bulk-like bandgap feature of the ZnO films in spite of the existing growth orientation transformation.

  13. Low temperature deposition of ZnO semiconductor thin films on a PEN substrate by a solution process

    NASA Astrophysics Data System (ADS)

    Tsay, Chien-Yie; Wu, Pei-Wen

    2013-07-01

    Low-temperature processed ZnO semiconductor films were deposited onto polyethylene naphthalate (PEN) plastic substrates by a spin coating technique using ZnO nanoparticle (NP) dispersion. The ZnO nanoparticles (NPs) were synthesized by the hydrothermal method, and solution processable dispersion was used to disperse the ZnO NPs in a mixed aqueous solution with a polyvinylpyrrolidone (PVP) dispersant agent. The effects of annealing temperature (from 150°C to 250°C) on the electrical properties of glass/ZnO film samples are reported. The optimized annealing condition (200°C) was applied for ZnO film deposited on a PEN substrate. Comparative electrical properties of the PEN/ZnO film samples before and after bending tests are also presented. Experimental results show that the electrical resistivity of the PEN/ZnO film sample was 1.91 × 104 Ω cm with a Hall mobility of 45.9 cm2/Vs. After bending tests, the electrical resistivity was raised to 1.26 × 105 Ω cm and the Hall mobility was reduced to 31.0 cm2/Vs.

  14. Photoluminescence studies of ZnO thin films prepared using a laser-assisted sol-gel method

    NASA Astrophysics Data System (ADS)

    Kim, Min Su; Lee, Jewon; Kim, Yangsoo; Leem, Jae-Young; Lee, Sang-heon; So, Wonshoup; Jung, Jae Hak; Kim, Jong Su

    2012-12-01

    ZnO thin films were grown on Si(100) substrates by using a laser-assisted sol-gel method involving irradiation from a 325-nm He-Cd laser. In contrast to conventionally-synthesized sol-gel ZnO thin films, the surfaces of those grown using the laser-assisted sol-gel method were much smoother. The optical properties of the ZnO thin films were investigated using temperature-dependent photoluminescence (PL). In the room-temperature PL spectra, the intensity of the blue-green emission was dramatically decreased by laser irradiation during the stages of deposition and post-heat treatment. Moreover, the full width at half maximum of the near-band-edge emission peaks was decreased by the laser irradiation. The activation energy of the laser-assisted sol-gel ZnO thin films was determined to be ˜99 meV, and the values of the fitting parameters α and β for Varshni's empirical equation were 4 × 10-3 eV/K and 4.9 × 103 K, respectively. Another fitting based on the thermal broadening effect of the excitonic emission peak revealed a decreased exciton-phonon interaction in the laser-assisted ZnO thin films.

  15. Effect of self-organization, defects, impurities, and autocatalytic processes on the parameters of ZnO films and nanorods

    SciTech Connect

    Mezdrogina, M. M. Eremenko, M. V.; Levitskii, V. S.; Petrov, V. N.; Terukov, E. I.; Kaidashev, E. M.; Langusov, N. V.

    2015-11-15

    The effects of the parameters of ZnO-film deposition onto different substrates using the method of ac magnetron sputtering in a gas mixture of argon and oxygen hare studied. The phenomenon of self-organization is observed, which leads to invariability of the surface morphology of the ZnO films upon a variation in the substrate materials and deposition parameters. The parameters of the macro- and micro-photoluminescence spectra of the films differ insignificantly from the parameters of the photoluminescence spectra of bulk ZnO crystals obtained by the method of hydrothermal growth. The presence of intense emission with a narrow full-width at half-maximum (FWHM) in different regions of the spectrum allows ZnO films obtained by magnetron sputtering doped with rare-earth metal impurities (REIs) to be considered as a promising material for the creation of optoelectronic devices working in a broad spectral range. The possibility of the implementation of magnetic ordering upon legierung with REIs significantly broadens the functional possibilities of ZnO films. The parameters of the photoluminescence spectra of ZnO nanorods are determined by their geometrical parameters and by the concentration and type of the impurities introduced.

  16. Fast and enhanced broadband photoresponse of a ZnO nanowire array/reduced graphene oxide film hybrid photodetector from the visible to the near-infrared range.

    PubMed

    Liu, Hao; Sun, Qi; Xing, Jie; Zheng, Zhiyuan; Zhang, Zhili; Lü, Zhiqing; Zhao, Kun

    2015-04-01

    In the present work, a ZnO nanowire array/reduced graphene oxide film hybrid nanostructure was realized, and the photovoltaic responses from the visible to the near-infrared range were investigated. Compared with the pure ZnO nanowire array and rGO thin film, the hybrid composite exhibited a fast and greatly enhanced broadband photovoltaic response that resulted from the formation of interfacial Schottky junctions between ZnO and rGO.

  17. Influence of solution viscosity on hydrothermally grown ZnO thin films for DSSC applications

    NASA Astrophysics Data System (ADS)

    Marimuthu, T.; Anandhan, N.; Thangamuthu, R.; Surya, S.

    2016-10-01

    Zinc oxide (ZnO) nanowire arrays (NWAs) were grown onto zinc oxide-titanium dioxide (ZnO-TiO2) seeded fluorine doped tin oxide (FTO) conductive substrate by hydrothermal technique. X-ray diffraction (XRD) patterns depict that ZnO thin films are preferentially oriented along the (002) plane with hexagonal wurtzite structure. Viscosity measurements reveal that viscosity of the solutions linearly increases as the concentrations of the polyvinyl alcohol (PVA) increase in the growth solution. Field emission scanning electron microscope (FE-SEM) images show that the NWAs are vertically grown to seeded FTO substrate with hexagonal structure, and the growth of NWAs decreases as the concentration of the PVA increases. Stylus profilometer and atomic force microscopic (AFM) studies predict that the thickness and roughness of the films decrease with increasing the PVA concentrations. The NWAs prepared at 0.1% of PVA exhibits a lower transmittance and higher absorbance than that of the other films. The band gap of the optimized films prepared at 0.0 and 0.1% of PVA is found to be 3.270 and 3.268 eV, respectively. The photo to current conversion efficiency of the DSSC based on photoanodes prepared at 0.0 and 0.1% of PVA exhibits about 0.64 and 0.82%, respectively. Electrochemical impedance spectra reveal that the DSSC based on photoanode prepared at 0.1% of PVA has the highest charge transfer recombination resistance.

  18. Band gaps by design: Tailoring ZnO based semiconductor alloy films

    NASA Astrophysics Data System (ADS)

    Che, Hui

    This dissertation presents the research on the synthesis of ZnO based ternary semiconductor alloy films with tailored band gaps and the studies in their structural and optical properties. MgxZn1-xO alloys expanded the band gaps from 3.20 eV to deeper UV region of 5.67 eV. While ZnSxO1-x reduced the band gaps into the visible region of 2.9 eV. The alloy films were grown via reactive sputtering deposition, which is a cost effective and environment-friendly technique. An analytical method was developed for accurately determining the band gaps of alloys via transmission spectroscopy. The structural inhomogeneity issues in the Mg xZn1-xO alloys were studied via Selective Resonant Raman Scattering. Urbach energy analysis and Raman spectral line width analysis indicated that structural defects and alloy composition fluctuations in the MgxZn1-xO alloy films are the dominant origins of the localized electronic tail states and the Raman line broadening. While the Raman line broadening due to the anharmonicity of the alloys is not significant. The achievement of ZnSxO1-x alloy films with reduced band gaps paved the way for further research on band gap engineering of ZnO in the visible region.

  19. Superhydrophobic and transparent ZnO thin films synthesized by spray pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Tarwal, N. L.; Patil, P. S.

    2010-10-01

    Superhydrophobic and transparent zinc oxide (ZnO) thin films were deposited by a simple and cost effective spray pyrolysis technique (SPT) onto the glass substrates at 723 K from an aqueous zinc acetate precursor solution. The solution concentration was varied from 0.1 to 0.4 M and its effect on structural, morphological, wetting and optical properties of ZnO thin films was studied. The synthesized films were found to be polycrystalline, with preferential growth along c-axis. A slight improvement in the crystallite size and texture coefficient is observed as the concentration of the solution is increased. SEM micrographs show the uniform distribution of spherical grains of about 60-80 nm grain size. The films were specular and highly transparent with average transmittance of about 85%. The spectrum shows sharp absorption band edge at 381 nm, corresponding to optical gap of 3.25 eV. The samples of texture coefficient less than 90% and roughness less than 75 nm are hydrophobic and above these values they become superhydrophobic in nature. The hydrophobicity coupled with high transmittance is of great importance in commercial application such as transparent self-cleaning surfaces, anti-fog, anti-snow, fluid microchips and microreactors.

  20. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    SciTech Connect

    Venkatesh, S.; Baras, A.; Lee, J. -S.; Roqan, I. S.

    2016-03-24

    Here, we studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (~40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

  1. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    SciTech Connect

    Venkatesh, S.; Baras, A.; Roqan, I. S.; Lee, J.-S.

    2016-03-15

    We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaron percolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

  2. Exciton and core-level electron confinement effects in transparent ZnO thin films

    PubMed Central

    Mosquera, Adolfo A.; Horwat, David; Rashkovskiy, Alexandr; Kovalev, Anatoly; Miska, Patrice; Wainstein, Dmitry; Albella, Jose M.; Endrino, Jose L.

    2013-01-01

    The excitonic light emission of ZnO films have been investigated by means of photoluminescence measurements in ultraviolet-visible region. Exciton confinement effects have been observed in thin ZnO coatings with thickness below 20 nm. This is enhanced by a rise of the intensity and a blue shift of the photoluminescence peak after extraction of the adsorbed species upon annealing in air. It is found experimentally that the free exciton energy (determined by the photoluminescence peak) is inversely proportional to the square of the thickness while core-level binding energy is inversely proportional to the thickness. These findings correlate very well with the theory of kinetic and potential confinements.

  3. Fabrication Method Study of ZnO Nanocoated Cellulose Film and Its Piezoelectric Property

    PubMed Central

    Ko, Hyun-U; Kim, Hyun Chan; Kim, Jung Woong; Zhai, Lindong; Kim, Jaehwan

    2017-01-01

    Recently, a cellulose-based composite material with a thin ZnO nanolayer—namely, ZnO nanocoated cellulose film (ZONCE)—was fabricated to increase its piezoelectric charge constant. However, the fabrication method has limitations to its application in mass production. In this paper, a hydrothermal synthesis method suitable for the mass production of ZONCE (HZONCE) is proposed. A simple hydrothermal synthesis which includes a hydrothermal reaction is used for the production, and the reaction time is controlled. To improve the piezoelectric charge constant, the hydrothermal reaction is conducted twice. HZONCE fabricated by twice-hydrothermal reaction shows approximately 1.6-times improved piezoelectric charge constant compared to HZONCE fabricated by single hydrothermal reaction. Since the fabricated HZONCE has high transparency, dielectric constant, and piezoelectric constant, the proposed method can be applied for continuous mass production. PMID:28772971

  4. Fabrication Method Study of ZnO Nanocoated Cellulose Film and Its Piezoelectric Property.

    PubMed

    Ko, Hyun-U; Kim, Hyun Chan; Kim, Jung Woong; Zhai, Lindong; Kim, Jaehwan

    2017-06-02

    Recently, a cellulose-based composite material with a thin ZnO nanolayer-namely, ZnO nanocoated cellulose film (ZONCE)-was fabricated to increase its piezoelectric charge constant. However, the fabrication method has limitations to its application in mass production. In this paper, a hydrothermal synthesis method suitable for the mass production of ZONCE (HZONCE) is proposed. A simple hydrothermal synthesis which includes a hydrothermal reaction is used for the production, and the reaction time is controlled. To improve the piezoelectric charge constant, the hydrothermal reaction is conducted twice. HZONCE fabricated by twice-hydrothermal reaction shows approximately 1.6-times improved piezoelectric charge constant compared to HZONCE fabricated by single hydrothermal reaction. Since the fabricated HZONCE has high transparency, dielectric constant, and piezoelectric constant, the proposed method can be applied for continuous mass production.

  5. ZnO buffer layer for metal films on silicon substrates

    SciTech Connect

    Ihlefeld, Jon

    2014-09-16

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  6. Synthesis of nano ZnO thin film on Al foil by rf glow discharge plasma and its effect on E. coli and P. aeruginosa

    NASA Astrophysics Data System (ADS)

    Panigrahi, Jagannath; Nayak, Bijan B.; Behera, Debadhyan; Subudhi, Umakanta; Acharya, Bhabani S.

    2012-09-01

    Nano ZnO thin films were deposited on thin Al foils by a rf glow discharge plasma method in which sublimed zinc acetate vapor (precursor) reacted with oxygen plasma inside a low-pressure reactor. The films were microstructurally characterized using XRD, TEM, FESEM, optical reflectance and micro-Raman spectroscopy methods. In view of the good scope of ZnO coating in food packaging, the antibacterial activity in the ZnO thin films was studied by exposing the films to E. coli and P. aeruginosa for up to 8 h. Bacterial cell inhibition of up to 98-99 % was observed in the thin films.

  7. Electromechanical coupling coefficient k15 of polycrystalline ZnO films with the c-axes lie in the substrate plane.

    PubMed

    Yanagitani, Takahiko; Mishima, Natsuki; Matsukawa, Mami; Watanabe, Yoshiaki

    2007-04-01

    The (1120) textured polycrystalline ZnO films with a high shear mode electromechanical coupling coefficient k15 are obtained by sputter deposition. An over-moded resonator, a layered structure of metal electrode film/(1120) textured ZnO piezoelectric film/metal electrode film/silica glass substrate was used to characterize k15 by a resonant spectrum method. The (1120) textured ZnO piezoelectric films with excellent crystallite c-axis alignment showed an electromechanical coupling coefficient k15 of 0.24. This value was 92% of k15 value in single-crystal (k15 = 0.26).

  8. Structural, spectroscopic and electrical studies of nanostructured porous ZnO thin films prepared by pulsed laser deposition.

    PubMed

    Vinodkumar, R; Navas, I; Porsezian, K; Ganesan, V; Unnikrishnan, N V; Mahadevan Pillai, V P

    2014-01-24

    ZnO thin films are grown on quartz substrates at various substrate temperatures (ranging from 573 to 973 K) under an oxygen ambience of 0.02 mbar by using pulsed laser ablation. Influence of substrate temperature on the structural, morphological, optical and electrical properties of the ZnO thin films are investigated. The XRD and micro-Raman spectra reveal the presence of hexagonal wurtzite structure of ZnO with preferred orientation (002). The particle size is calculated using Debye-Scherer equation and the average size of the crystallites are found to be in the range 17-29 nm. The AFM study reveals that the surface morphology of the film depends strongly on the substrate temperature. UV-Visible transmittance spectra show highly transparent nature of the films in visible region. The calculated optical band gap energy is found to be decrease with increase in substrate temperatures. The complex dielectric constant, the loss factor and the distribution of the volume and surface energy loss of the ZnO thin films prepared at different substrate temperatures are calculated. All the films are found to be highly porous in nature. The PL spectra show very strong emission in the blue region for all the films. The dc electrical resistivity of the film decreases with increase in substrate temperature. The temperature dependent electrical measurements done on the film prepared at substrate temperature 573 K reveals that the electric conduction is thermally activated and the activation energy is found to be 0.03911 eV which is less than the reported values for ZnO films.

  9. Structure and properties of Co-doped ZnO films prepared by thermal oxidization under a high magnetic field.

    PubMed

    Li, Guojian; Wang, Huimin; Wang, Qiang; Zhao, Yue; Wang, Zhen; Du, Jiaojiao; Ma, Yonghui

    2015-01-01

    The effect of a high magnetic field applied during oxidation on the structure, optical transmittance, resistivity, and magnetism of cobalt (Co)-doped zinc oxide (ZnO) thin films prepared by oxidizing evaporated Zn/Co bilayer thin films in open air was studied. The relationship between the structure and properties of films oxidized with and without an applied magnetic field was analyzed. The results show that the high magnetic field obviously changed the structure and properties of the Co-doped ZnO films. The Lorentz force of the high magnetic field suppressed the oxidation growth on nanowhiskers. As a result, ZnO nanowires were formed without a magnetic field, whereas polyhedral particles formed under a 6 T magnetic field. This morphology variation from dendrite to polyhedron caused the transmittance below 1,200 nm of the film oxidized under a magnetic field of 6 T to be much lower than that of the film oxidized without a magnetic field. X-ray photoemission spectroscopy indicated that the high magnetic field suppressed Co substitution in the ZnO lattice, increased the concentration of oxygen vacancies, and changed the chemical state of Co. The increased concentration of oxygen vacancies affected the temperature dependence of the resistivity of the film oxidized under a magnetic field of 6 T compared with that of the film oxidized without a magnetic field. The changes of oxygen vacancy concentration and Co state caused by the application of the high magnetic field also increase the ferromagnetism of the film at room temperature. All of these results indicate that a high magnetic field is an effective tool to modify the structure and properties of ZnO thin films.

  10. Effect of toxic gases on humidity sensing property of nanocrystalline ZnO film

    NASA Astrophysics Data System (ADS)

    Dixit, Shobhna; Srivastava, Anchal; Srivastava, Atul; Shukla, R. K.

    2007-12-01

    Humidity sensing property of nanocrystalline ZnO film has been investigated over a range of 5-90RH%. Contrary to more popular electrical approach, a novel optoelectronic sensing method has been used. Performance of the humidity sensor is affected by the presence of toxic gases in atmosphere. To gauge this effect, the humidity sensing properties of the film are studied by exposing it to the environment of H2S, SO2, and CH3OH one by one. The zinc oxide film is deposited using print and fire technology. X-ray diffraction of the film shows polycrystalline structure with average grain size of 33.5nm. The effect of toxic gases on the humidity sensing behavior of the film is explained while studying surface morphology of the film. The least detectable change (LDC) in humidity is evaluated for each case. For unexposed film it is found to be 0.14RH%. The LDC in the case of SO2-exposed film is recovered back almost completely by heat treatment.

  11. Growth and characterization of molybdenum doped ZnO thin films by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Swapna, R.; Santhosh Kumar, M. C.

    2013-03-01

    Undoped and molybdenum doped zinc oxide (MZO) thin films were deposited on the glass substrate at a substrate temperature of 623 K by spray pyrolysis method. The effect of molybdenum (Mo) dopant concentration (0-4 at%) on the structural, morphological, optical and electrical properties of n-type MZO films was studied. The X-ray diffraction (XRD) results confirmed that the MZO thin films were polycrystalline with wurtzite structure. The scanning electron microscopy (SEM) measurements showed that the surface morphology of the films changes with Mo doping. The surface roughness of the films was investigated by atomic force microscopy (AFM). It was observed that the roughness of the films increases with the increase of Mo doping percentage. A blue shift of the optical band gap was observed. Room temperature photoluminescence (PL) measurement of the deposited films indicates the incorporation of Mo in ZnO lattice. The temperature dependence of the electrical conductivity was studied in the range of 300 K-425 K. At 2 at% Mo doping, the films have shown comparatively high electrical conductivity.

  12. Growth-temperature-dependent optical and acetone detection properties of ZnO thin films

    NASA Astrophysics Data System (ADS)

    Shewale, P. S.; Yu, Y. S.

    2015-07-01

    Zinc oxide (ZnO) thin films were prepared onto glass substrates at moderately low growth temperature by two-stage spray pyrolysis technique. The effects of growth temperature on structural, optical and acetone detection properties were investigated with X-ray diffractometry, a UV-visible spectrophotometer, photoluminescence (PL) spectroscopy and a homemade gas sensor testing unit, respectively. All the films are polycrystalline with a hexagonal wurtzite phase and exhibit a preferential orientation along [002] direction. The film crystallinity is gradually enhanced with an increase in growth temperature. The optical measurements show that all the films are physically highly transparent with a transmittance greater than 82% in the visible range. The band gap of the film is observed to exhibit a slight red shift with an increasing growth temperature. The PL studies on the films show UV/violet PL band at ˜ 395 nm. Among all the films investigated, the film deposited at 250 °C demonstrates a maximum sensitivity of 13% towards 20 ppm of acetone vapors at 300 °C operating temperature. Project supported by the Dong-Eui University Grant (No. 2014AA342).

  13. Double layer structure of ZnO thin films deposited by RF-magnetron sputtering on glass substrate

    NASA Astrophysics Data System (ADS)

    Besleaga, C.; Stan, G. E.; Galca, A. C.; Ion, L.; Antohe, S.

    2012-09-01

    Transparent ZnO films are synthesized by RF-magnetron sputtering (1.78 MHz) onto glass substrates, using a mild-pressed ZnO powder target. The depositions were carried at three inert argon pressures (0.25 Pa, 0.30 Pa, and 0.45 Pa) at two substrate temperatures (100 °C and 400 °C). The role of the sputtering conditions on ZnO thin films nanostructuring, optical properties and morphology is investigated by X-ray diffraction (XRD), X-ray reflectometry (XRR) and Spectroscopic ellipsometry (SE). XRD investigations revealed that ZnO films show a (0 0 l) texture with nanosized crystallites. Right-angle asymmetry of the (0 0 2) diffraction peak is observed. The peak profile analysis using pseudo-Voigt functions unveils a double overlapped peak structure with different coherent zone size values. A double layer structure is evidenced by analyzing the XRR data. Samples prepared at 0.3 Pa at a temperature of 400 °C have a ˜4 nm bottom layer consisting of highly depleted in oxygen ZnO1-x structure, continued by a 53 nm top layer of textured ZnO. Electrical measurements show that the temperature dependence of the conductivity is well described by the Mott variable range hopping (VRH) law. The samples obtained at 400 °C have a significantly lower resistivity.

  14. Synthesis and characterization of ZnO nanowires by thermal oxidation of Zn thin films at various temperatures.

    PubMed

    Khanlary, Mohammad Reza; Vahedi, Vahid; Reyhani, Ali

    2012-05-02

    In this research high-quality zinc oxide (ZnO) nanowires have been synthesized by thermal oxidation of metallic Zn thin films. Metallic Zn films with thicknesses of 250 nm have been deposited on a glass substrate by the PVD technique. The deposited zinc thin films were oxidized in air at various temperatures ranging between 450 °C to 650 °C. Surface morphology, structural and optical properties of the ZnO nanowires were examined by scanning electron microscope (SEM), X-ray diffraction (XRD), energy dispersive X-ray (EDX) and photoluminescence (PL) measurements. XRD analysis demonstrated that the ZnO nanowires has a wurtzite structure with orientation of (002), and the nanowires prepared at 600 °C has a better crystalline quality than samples prepared at other temperatures. SEM results indicate that by increasing the oxidation temperature, the dimensions of the ZnO nanowires increase. The optimum temperature for synthesizing high density, ZnO nanowires was determined to be 600 °C. EDX results revealed that only Zn and O are present in the samples, indicating a pure ZnO composition. The PL spectra of as-synthesized nanowires exhibited a strong UV emission and a relatively weak green emission.

  15. Conductive ZnO:Zn Composites for High-Rate Sputtering Deposition of ZnO Thin Films

    NASA Astrophysics Data System (ADS)

    Zhou, Li Qin; Dubey, Mukul; Simões, Raul; Fan, Qi Hua; Neto, Victor

    2015-02-01

    We report an electrically conductive composite prepared by sintering ZnO and metallic Zn powders. Microstructure analysis combined with electrical conductivity studies indicated that when the proportion of metallic Zn reached a threshold (˜20 wt.%), a metal matrix was formed in accordance with percolation theory. This composite has potential as a sputtering target for deposition of high-quality ZnO. Use of the ZnO:Zn composite completely eliminates target poisoning effects in reactive sputtering of the metal, and enables deposition of thin ZnO films at rates much higher than those obtained by sputtering of pure ZnO ceramic targets. The optical transmittance of the ZnO films prepared by use of this composite is comparable with that of films produced by radio frequency sputtering of pure ZnO ceramic targets. The sputtering characteristics of the conductive ZnO:Zn composite target are reported, and possible mechanisms of the high rate of deposition are also discussed.

  16. The Effect of Thickness of ZnO Thin Films on Hydrophobic Self-Cleaning Properties

    NASA Astrophysics Data System (ADS)

    Mufti, N.; Arista, D.; Diantoro, M.; Fuad, A.; Taufiq, A.; Sunaryono

    2017-05-01

    Glass coating can be conducted by using ZnO-photocatalyst based semiconductor material since it is preeminent in decomposing organics compound and dangerous bacteria which often contaminates the environment. If there are dirt containing organics compound on the glass, the ZnO photocatalyst coat can be applied as self-cleaning, usually called self-cleaning glass. It depends on the coating thickness which can be controlled by setting the speed of spin coating. In this research, the various rotating speeds of spin coating were conducted at 2000 rpm, 3000 rpm, and 4000 rpm to control the thickness. The raw materials used in this research were Zn(CH3COOH)2.2H2O (PA 99,5%), Ethylene glycol, Diethanolamine (PA 99%), Isopropanol Alkohol, Glycerol, and Ashton. Synthesis methods used were sol-gel prior to spin coating technic were applied. The results of the film were characterized by using SEM, XRD, and UV-Spectrophotometer. The crystal structure was analyzed by using Highscore plus and GSAS software, the size crystal was calculated by using Scherrer equation, a contact angle with ImageJ software. It was shown that ZnO thin film had been successfully synthesized with the crystal size around 21 nm up to 26 nm. The absorption value is higher due to the increasing of coat thickness with bandgap ± 3.2 eV. The test result of hydrophobic and hydrophilic characteristics show that all samples of ZnO thin film with the thickness ± 1.050 μm, ± 0.450 μm, ± 0.250 μm can be applied as self-cleaning glass. The best result was gained with the thickness of thin film ± 1.050 μm.

  17. ZnO thin films and nanostructures for emerging optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Rogers, D. J.; Teherani, F. H.; Sandana, V. E.; Razeghi, M.

    2010-02-01

    ZnO-based thin films and nanostructures grown by PLD for various emerging optoelectronic applications. AZO thin films are currently displacing ITO for many TCO applications due to recent improvements in attainable AZO conductivity combined with processing, cost and toxicity advantages. Advances in the channel mobilities and Id on/off ratios in ZnO-based TTFTs have opened up the potential for use as a replacement for a-Si in AM-OLED and AM-LCD screens. Angular-dependent specular reflection measurements of self-forming, moth-eye-like, nanostructure arrays grown by PLD were seen to have <0.5% reflectivity over the whole visible spectrum for angles of incidence between 10 and 60 degrees. Such nanostructures may be useful for applications such as AR coatings on solar cells. Compliant ZnO layers on mismatched/amorphous substrates were shown to have potential for MOVPE regrowth of GaN. This approach could be used as a means to facilitate lift-off of GaN-based LEDs from insulating sapphire substrates and could allow the growth of InGaN-based solar cells on cheap substrates. The green gap in InGaN-based LEDs was combated by substituting low Ts PLD n-ZnO for MOCVD n-GaN in inverted hybrid heterojunctions. This approach maintained the integrity of the InGaN MQWs and gave LEDs with green emission at just over 510 nm. Hybrid n-ZnO/p-GaN heterojunctions were also seen to have the potential for UV (375 nm) EL, characteristic of ZnO NBE emission. This suggests that there was significant hole injection into the ZnO and that such LEDs could profit from the relatively high exciton binding energy of ZnO.

  18. Effect of surface microstructure and wettability on plasma protein adsorption to ZnO thin films prepared at different RF powers.

    PubMed

    Huang, Zhan-Yun; Chen, Min; Pan, Shi-Rong; Chen, Di-Hu

    2010-10-01

    In this paper, the adsorption behavior of plasma proteins on the surface of ZnO thin films prepared by radio frequency (RF) sputtering under different sputtering powers was studied. The microstructures and surface properties of the ZnO thin films were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible optical absorption spectroscopy and contact angle techniques. The results show that the ZnO thin films have better orientation of the (0 0 2) peak with increasing RF power, especially at around 160 W, and the optical band gap of the ZnO films varies from 3.2 to 3.4 eV. The contact angle test carried out by the sessile drop technique denoted a hydrophobic surface of the ZnO films, and the surface energy and adhesive work of the ZnO thin films decreased with increasing sputtering power. The amounts of human fibrinogen (HFG) and human serum albumin (HSA) adsorbing on the ZnO films and reference samples were determined by using enzyme-linked immunosorbent assay (ELISA). The results show that fewer plasma proteins and a smaller HFG/HSA ratio adsorb on the ZnO thin films' surface.

  19. In situ growth of a ZnO nanowire network within a TiO(2) nanoparticle film for enhanced dye-sensitized solar cell performance.

    PubMed

    Bai, Yang; Yu, Hua; Li, Zhen; Amal, Rose; Lu, Gao Qing Max; Wang, Lianzhou

    2012-11-14

    ZnO nanowire networks featuring excellent charge transport and light scattering properties are grown in situ within TiO(2) films. The resultant TiO(2) /ZnO composites, used as photoanodes, remarkably enhance the overall conversion efficiency of dye-sensitized solar cells (DSSCs) by 26.9%, compared to that of benchmark TiO(2) films.

  20. Etching Characteristics and Mechanism of ZnO and Ga-Doped ZnO Thin Films in Inductively Coupled HBr/Ar/CHF3 Plasma

    NASA Astrophysics Data System (ADS)

    Ham, Yong-Hyun; Efremov, Alexander; Lee, Hyun-Woo; Yun, Sun Jin; Min, Nam Ki; Kim, Kwangsoo; Kwon, Kwang-Ho

    2010-08-01

    The etching characteristics and mechanisms of ZnO and Ga-doped ZnO (Ga-ZnO) thin films in a HBr/Ar/CHF3 inductively coupled plasma were investigated. The etching rate of ZnO was measured as a function of the CHF3 mixing ratio in the range of 0-15% in a HBr:Ar = 5:2 plasma at a fixed gas pressure (6 mTorr), input power (700 W), bias power (200 W), and total gas flow rate (50 sccm). The plasma chemistry was analyzed by a combination of the global (zero-dimensional) plasma model, Langmuir probe diagnostics (LP) and quadrupole mass spectrometer (QMS) analysis. It was found that the densities of both HBr and Br are significantly affected by the reactions with the CHF3 dissociation products, while both the ZnO and Ga-ZnO etching rates follow the behavior of the Br atom density and flux. This suggests that the ZnO and Ga-ZnO etching processes are not limited by the ion-surface interaction kinetics and appear in the reaction-rate-limited etching regime.

  1. EXAFS and XANES investigation of (Li, Ni) codoped ZnO thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Mino, Lorenzo; Gianolio, Diego; Bardelli, Fabrizio; Prestipino, Carmelo; Senthil Kumar, E.; Bellarmine, F.; Ramanjaneyulu, M.; Lamberti, Carlo; Ramachandra Rao, M. S.

    2013-09-01

    Ni doped, Li doped and (Li, Ni) codoped ZnO thin films were successfully grown using a pulsed laser deposition technique. Undoped and doped ZnO thin films were investigated using extended x-ray absorption fine structure (EXAFS) and x-ray absorption near edge spectroscopy (XANES). Preliminary investigations on the Zn K-edge of the undoped and doped ZnO thin films revealed that doping has not influenced the average Zn-Zn bond length and Debye-Waller factor. This shows that both Ni and Li doping do not appreciably affect the average local environment of Zn. All the doped ZnO thin films exhibited more than 50% of substitutional Ni, with a maximum of 77% for 2% Ni and 2% Li doped ZnO thin film. The contribution of Ni metal to the EXAFS signal clearly reveals the presence of Ni clusters. The Ni-Ni distance in the Ni0 nanoclusters, which are formed in the film, is shorter with respect to the reference Ni metal foil and the Debye-Waller factor is higher. Both facts perfectly reflect what is expected for metal nanoparticles. At the highest doping concentration (5%), the presence of Li favors the growth of a secondary NiO phase. Indeed, 2% Ni and 5% Li doped ZnO thin film shows %Nisub = 75 ± 11, %Nimet = 10 ± 8, %NiO = 15 ± 8. XANES studies further confirm that the substitutional Ni is more than 50% in all the samples. These results explain the observed magnetic properties.

  2. Influence of water content in mixed solvent on surface morphology, wettability, and photoconductivity of ZnO thin films

    PubMed Central

    2014-01-01

    ZnO thin films have been synthesized by means of a simple hydrothermal method with different solvents. The effect of deionized water content in the mixed solvents on the surface morphology, crystal structure, and optical property has been investigated by scanning electron microscopy, X-ray diffraction, and UV-Vis spectrophotometer. A large number of compact and well-aligned hexagonal ZnO nanorods and the maximal texture coefficient have been observed in the thin film, which is grown in the mixed solvent with x = 40%. A lot of sparse, diagonal, and pointed nanorods can be seen in the ZnO thin film, which is grown in the 40-mL DI water solution. The optical band gap decreases firstly and then increases with the increase of x. Reversible wettability of ZnO thin films were studied by home-made water contact angle apparatus. Reversible transition between hydrophobicity and hydrophilicity may be attributed to the change of surface chemical composition, surface roughness and the proportion of nonpolar planes on the surface of ZnO thin films. Photocurrent response of ZnO thin films grown at different solvents were measured in air. The response duration of the thin film, which is grown in the solvent with x = 40%, exhibits a fast growth in the beginning but cannot approach the saturate current value within 100 s. The theoretical mechanism for the slower growth or decay duration of the photocurrent has been discussed in detail. PMID:25249823

  3. Influence of water content in mixed solvent on surface morphology, wettability, and photoconductivity of ZnO thin films.

    PubMed

    Zhao, Min; Shang, Fengjiao; Lv, Jianguo; Song, Ying; Wang, Feng; Zhou, Zhitao; He, Gang; Zhang, Miao; Song, Xueping; Sun, Zhaoqi; Wei, Yiyong; Chen, Xiaoshuang

    2014-01-01

    ZnO thin films have been synthesized by means of a simple hydrothermal method with different solvents. The effect of deionized water content in the mixed solvents on the surface morphology, crystal structure, and optical property has been investigated by scanning electron microscopy, X-ray diffraction, and UV-Vis spectrophotometer. A large number of compact and well-aligned hexagonal ZnO nanorods and the maximal texture coefficient have been observed in the thin film, which is grown in the mixed solvent with x = 40%. A lot of sparse, diagonal, and pointed nanorods can be seen in the ZnO thin film, which is grown in the 40-mL DI water solution. The optical band gap decreases firstly and then increases with the increase of x. Reversible wettability of ZnO thin films were studied by home-made water contact angle apparatus. Reversible transition between hydrophobicity and hydrophilicity may be attributed to the change of surface chemical composition, surface roughness and the proportion of nonpolar planes on the surface of ZnO thin films. Photocurrent response of ZnO thin films grown at different solvents were measured in air. The response duration of the thin film, which is grown in the solvent with x = 40%, exhibits a fast growth in the beginning but cannot approach the saturate current value within 100 s. The theoretical mechanism for the slower growth or decay duration of the photocurrent has been discussed in detail.

  4. Realization of Cu-Doped p-Type ZnO Thin Films by Molecular Beam Epitaxy.

    PubMed

    Suja, Mohammad; Bashar, Sunayna B; Morshed, Muhammad M; Liu, Jianlin

    2015-04-29

    Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films, and the best conductivity is achieved with a high hole concentration of 1.54 × 10(18) cm(-3), a low resistivity of 0.6 Ω cm, and a moderate mobility of 6.65 cm(2) V(-1) s(-1) at room temperature. Metal oxide semiconductor capacitor devices have been fabricated on the Cu-doped ZnO films, and the characteristics of capacitance-voltage measurements demonstrate that the Cu-doped ZnO thin films under proper growth conditions are p-type. Seebeck measurements on these Cu-doped ZnO samples lead to positive Seebeck coefficients and further confirm the p-type conductivity. Other measurements such as X-ray diffraction, X-ray photoelectron, Raman, and absorption spectroscopies are also performed to elucidate the structural and optical characteristics of the Cu-doped p-type ZnO films. The p-type conductivity is explained to originate from Cu substitution of Zn with a valency of +1 state. However, all p-type samples are converted to n-type over time, which is mostly due to the carrier compensation from extrinsic defects of ZnO.

  5. Spectroscopic characterization of the plasmas formed during the deposition of ZnO and Al-doped ZnO films by plasma-assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Liang, Peipei; Cai, Hua; Yang, Xu; Li, Hui; Zhang, Wu; Xu, Ning; Sun, Jian; Wu, Jiada

    2016-11-01

    An oxygen-zinc plasma and an oxygen-zinc-aluminum plasma are formed by pulsed laser ablation of a Zn target or pulsed laser co-ablation of a Zn target and an Al target in an electron cyclotron resonance (ECR) discharge-generated oxygen plasma for the deposition of ZnO and Al-doped ZnO (AZO) films. The plasmas are characterized spectroscopically by time-integrated and time-resolved optical emission spectroscopy. Both the oxygen-zinc plasma and the oxygen-zinc-aluminum plasma contain excited species originally present in the working O2 gas and energetic species ablated from the targets. The optical emission of the oxygen-zinc-aluminum plasma is abundant in the emission bands of oxygen molecular ions and the emission lines of mono-atomic oxygen, zinc and aluminum atoms and atomic ions. The time-integrated spectra as well as the time-resolved spectra of the plasma emission indicate that the oxygen species in the ECR oxygen plasma experience additional excitation by the expanding ablation plumes, and the ablated species are excited frequently when traveling accompanying the plume expansion in the oxygen plasma, making the formed plasma highly excited and very reactive, which plays an important role in the reactive growth of ZnO matrix and the in-situ doping of Al into the growing ZnO matrix. The deposited ZnO and AZO films were evaluated for composition analysis by energy dispersive X-ray spectroscopy, structure characterization by X-ray diffraction and optical transmission measurement. The deposited ZnO is slightly rich in O. The Al concentration of the AZO films can be controlled and varied simply by changing the repetition rate of the laser used for Al target ablation. Both the ZnO and the AZO films are featured with hexagonal wurtzite crystal structure and exhibit high optical transparency in a wide spectral region. Al doping results in an improvement in the ultraviolet transparency, a blue shift in the absorption edge and a widening of the band gap.

  6. The low-cost preparation of pyramid-like texture ZnO thin films and the application as a front electrode in hydrogen amorphous silicon solar cells

    NASA Astrophysics Data System (ADS)

    Hu, Y. H.; Wang, L. F.; Xu, H. J.; Chen, Y. C.; Jiang, W. H.

    2010-10-01

    The pyramid-like texture ZnO thin films were usually synthesized by MOCVD or etching the as-prepared RF magnetron sputtering films, and the expensive equipment cost and uncontrollable acid etching, respectively are two main disadvantages both the MOCVD and RF magnetron sputtered. In this paper, the pyramid-like texture ZnO thin films were prepared through a low-cost two-step process, firstly, a seed ZnO:Al layer was coated on the quartz substrates by sol-gel method and subsequently a ZnO thin film was fabricated by RF magnetron sputtered. It is shown from the XRD and SEM results that the ZnO thin film has (101) preferential orientation with a pyramid-like texture. According to the measurement results of ZnO films' resistivity and UV-Visible transmission spectra, the lower resistivity of 10-3 Ωcm and optical transmission of higher than 80 % were obtained for these ZnO films. It has shown that the pyramid-like ZnO thin film is a potential transparent conductive film used in amorphous silicon solar cell for front electrode, and the cell performance is comparable advantages for that of ITO conductive film.

  7. Effect of In doping on the properties and antibacterial activity of ZnO films prepared by spray pyrolysis.

    PubMed

    Manoharan, C; Pavithra, G; Dhanapandian, S; Dhamodharan, P

    2015-01-01

    Pure and In-doped ZnO thin films were deposited onto glass substrates by spray pyrolysis technique. XRD results showed that all films were polycrystalline in nature with the wurzite structure. A change in preferential orientation from (002) to (101) plane was observed with increase in content of Indium. A reduce in crystallite size was observed with increase of In content. The small sized grains with the porous nature of the film was observed from SEM analysis. AFM study depicted polycrystalline nature and uniformly distributed grains with small pores in the doped film. A decrease in band gap was noticed with increase in In content. The absence of green emission in PL spectra indicated the decreased oxygen defects. The decrease in the resistivity with increase of Hall mobility was noted for the doped film. A better antibacterial activity was observed against Staphylococcus aureus by doped ZnO thin film.

  8. Graphene doped ZnO films for photoelectrowetting on microchannels

    NASA Astrophysics Data System (ADS)

    Al-Aribe, Khaled; Knopf, George K.

    2017-02-01

    Photoelectrowetting on dielectric surfaces can be used to drive droplets of liquid along reconfigurable paths on a microfluidic chip using controlled optical signals. These electrostatically activated surfaces along the desired path eliminate the need for precision molded channels and discrete functional components such as microvalves and micropumps. The photoelectrowetting effect exploits the surface tension of the droplet to maintain its volume during the transportation pathway and the photoelectric properties of the substrate surface are used to induce reversible fluidic flow. The active light-driven substrate is structured from graphene doped zinc-oxide (ZnO-G) films deposited on ITO coated glass. This substrate is coated from the ZnO-G side with Ruthenium-based dye (N719) to maximize its absorbability. The light triggers two forces that enable the droplet to be transported along the substrate. The first arises from the induced hydrophobicity gradient formed across the droplet contact area with the substrate surface. Exposing the ZnO-G film to a broad spectrum white light source alters the surface's electric potential which induces a change in the droplet's contact angle and the associated hydrophobicity. Once the hydrophobicity gradient is generated the droplet will start to move in the direction of the wetting zone. The second force is also created by the optical input when the absorbed light generates a photoelectric potential that produces a piezo-electrical effect on the ZnO-G film. The light triggered piezo-electrical behavior of the ZnO-G film can be used to generate the erasable microchannels that can guide droplet movement through a microfluidic chip. Preliminary experiments are performed to investigate the photoelectric potential of light activated ZnO-G films.

  9. Compositional and Structural Study of Gd Implanted ZnO Films

    NASA Astrophysics Data System (ADS)

    Murmu, Peter P.; Kennedy, John V.; Markwitz, Andreas; Ruck, Ben J.

    2009-07-01

    We report a compositional and structural study of ZnO films implanted with 30 keV Gd ions. The depth profile of the implanted ions, measured by Rutherford backscattering spectrometry, matches predictions of DYNAMIC-TRIM calculations. However, after annealing at temperatures above 550° C the Gd ions are observed to migrate towards the bulk, and at the same time atomic force microscope images of the film surfaces show significant roughening. Raman spectroscopy shows that the annealed films have a reduced number of crystalline defects. The overall results are useful for developing an implantation-annealing regime to produce well characterized samples to investigate magnetism in the ZnO:Gd system.

  10. Compositional and Structural Study of Gd Implanted ZnO Films

    SciTech Connect

    Murmu, Peter P.; Kennedy, John V.; Markwitz, Andreas; Ruck, Ben J.

    2009-07-23

    We report a compositional and structural study of ZnO films implanted with 30 keV Gd ions. The depth profile of the implanted ions, measured by Rutherford backscattering spectrometry, matches predictions of DYNAMIC-TRIM calculations. However, after annealing at temperatures above 550 deg. C the Gd ions are observed to migrate towards the bulk, and at the same time atomic force microscope images of the film surfaces show significant roughening. Raman spectroscopy shows that the annealed films have a reduced number of crystalline defects. The overall results are useful for developing an implantation-annealing regime to produce well characterized samples to investigate magnetism in the ZnO:Gd system.

  11. Enhanced stimulated emission in ZnO thin films using microdisk top-down structuring

    SciTech Connect

    Nomenyo, K.; Kostcheev, S.; Lérondel, G.; Gadallah, A.-S.; Rogers, D. J.

    2014-05-05

    Microdisks were fabricated in zinc oxide (ZnO) thin films using a top-down approach combining electron beam lithography and reactive ion etching. These microdisk structured thin films exhibit a stimulated surface emission between 3 and 7 times higher than that from a reference film depending on the excitation power density. Emission peak narrowing, reduction in lasing threshold and blue-shifting of the emission wavelength were observed along with enhancement in the emitted intensity. Results indicate that this enhancement is due to an increase in the internal quantum efficiency combined with an amplification of the stimulated emission. An analysis in terms of waveguiding is presented in order to explain these effects. These results demonstrate that very significant gains in emission can be obtained through conventional microstructuration without the need for more onerous top-down nanostructuration techniques.

  12. Substrate temperature effects on the electrical properties of sputtered Al doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Kim, Deok-Kyu; Kim, Hong-Bae

    2015-09-01

    Al doped ZnO (AZO) thin films were deposited on glass substrate by RF magnetron sputtering system. The dependence of structural, electrical, and optical properties on the substrate temperature variations in the range of 0-400 °C was investigated. The structural results reveal that the AZO films are (0 0 2) oriented and at 400 °C a considerable crystallinity enhancement of the films is observed. With increasing the substrate temperature, the resistivity is increased by decreasing of the mobility and carrier concentration. X-ray photoelectron spectroscopy (XPS) results show that the mobility and the carrier concentration are decreased by increasing the surface bonding and decreasing the Al content, respectively. In our case, the increase in substrate temperature suppressed the incorporation of Al atoms together with the decrease of oxygen vacancy. The improvement of Al doping efficiency is a very important factor to obtain better electrical properties at high substrate temperatures.

  13. Crystalline polarity of ZnO thin films deposited under dc external bias on various substrates

    NASA Astrophysics Data System (ADS)

    Ohsawa, Takeo; Tsunoda, Kei; Dierre, Benjamin; Zellhofer, Caroline; Grachev, Sergey; Montigaud, Hervé; Ishigaki, Takamasa; Ohashi, Naoki

    2017-04-01

    Effects of the nature of substrates, either crystalline or non-crystalline, on the structure and properties of ZnO films deposited by sputtering were investigated. This study focuses mainly on the role of the external electric bias applied to substrates during magnetron sputtering deposition in controlling crystalline polarity, i.e., Zn-face or O-face, and the resulting film properties. It was found that polarity control was achieved on silica and silicon substrates but not on sapphire substrates. The substrate bias did influence the lattice parameters in the structural formation; however, the selection of the substrate type had a significant influence on the defect structures and the film properties.

  14. Robust room temperature ferromagnetism and band gap tuning in nonmagnetic Mg doped ZnO films

    NASA Astrophysics Data System (ADS)

    Quan, Zhiyong; Liu, Xia; Qi, Yan; Song, Zhilin; Qi, Shifei; Zhou, Guowei; Xu, Xiaohong

    2017-03-01

    Mg doped ZnO films with hexagonal wurtzite structure were deposited on c-cut sapphire Al2O3 substrates by pulsed laser deposition. Both room temperature ferromagnetism and band gap of the films simultaneously tuned by the concentration of oxygen vacancies were performed. Our results further reveal that the singly occupied oxygen vacancies should be responsible for the room temperature ferromagnetism and band gap narrowing. Singly occupied oxygen vacancies having the localized magnetic moments form bound magnetic polarons, which results in a long-range ferromagnetic ordering due to Mg doping. Moreover, band gap narrowing of the films is probably due to the formation of impurity band in the vicinity of valence band, originating from singly occupied oxygen vacancies. These results may build a bridge to understand the relationship between the magnetic and optical properties in oxide semiconductor, and are promising to integrate multiple functions in one system.

  15. Work function increase of Al-doped ZnO thin films by B+ ion implantation.

    PubMed

    Hong, Sang-Jin; Heo, Gi-Seok; Park, Jong-Woon; Lee, In-Hwan; Choi, Bum-Ho; Lee, Jong-Ho; Park, Se-Yeon; Shin, Dong-Chan

    2007-11-01

    The work function of an Al-doped ZnO (AZO) thin film can be increased via B+ ion implantation from 3.92 eV up to 4.22 eV. The ion implantation has been carried out with the ion dose of 1 x 10(16) cm(-2) and ion energy of 5 keV. The resistance of the B+ implanted AZO films has been a bit raised, while their transmittance is slightly lowered, compared to those of un-implanted AZO films. These behaviors can be explained by the doping profile and the resultant band diagram. It is concluded that the coupling between the B+ ions and oxygen vacancies would be the main reason for an increase in the work function and a change in the other properties. We also address that the work function is more effectively alterable if the defect density of the top transparent conducting oxide layer can be controlled.

  16. Origin of carrier scattering in polycrystalline Al-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Jia, Junjun; Oka, Nobuto; Kusayanagi, Minehide; Nakatomi, Satoshi; Shigesato, Yuzo

    2014-10-01

    We observed the carrier transport phenomena in polycrystalline Al-doped ZnO (AZO) films with carrier densities ranging from 2.0 × 1019 to 1.1 × 1021 cm-3. A comparison of the optical carrier density and Hall carrier density indicates that the conduction band in AZO films is nonparabolic above 2.0 × 1020 cm-3. A transition from grain boundary scattering to ionized impurity scattering is observed at a doping level of ˜4.0 × 1020 cm-3. The trap density at the grain boundary increases with increasing Al concentration in the films, implying that the doping level plays a decisive role in the trap density. The excellent fitting of the optical mobility and carrier density using the Brooks-Herring model shows that the acceptor concentration increases with increasing doping level.

  17. Annealing temperature dependency of ZnO thin films memristive behavior

    NASA Astrophysics Data System (ADS)

    Shaari, N. A. A.; Kasim, S. M. M.; Rusop, M.; Herman, S. H.

    2016-07-01

    The work focuses on the effect of different annealing temperature on the ZnO-based memristive device. Zinc oxide was deposited on the ITO substrate by sol-gel spincoating technique. The deposited ZnO thin films were then annealed from 50°C to 450°C in a furnace for 60 minutes each. The electrodes Platinum (Pt) were sputtered by using JEOL JFC-1600 Auto Fine Coater. The thin film thicknesses were measured by Veeco Dektak 150 Surface Profiler. The thickness of the thin film annealed at 350°C is the thinnest, which is 54.78nm and from the electrical characterization it also shown the switching characteristic behavior. The surface morphology and topology to examine the existence of nanoparticles

  18. Effect of angle of deposition on the Fractal properties of ZnO thin film surface

    NASA Astrophysics Data System (ADS)

    Yadav, R. P.; Agarwal, D. C.; Kumar, Manvendra; Rajput, Parasmani; Tomar, D. S.; Pandey, S. N.; Priya, P. K.; Mittal, A. K.

    2017-09-01

    Zinc oxide (ZnO) thin films were prepared by atom beam sputtering at various deposition angles in the range of 20-75°. The deposited thin films were examined by glancing angle X-ray diffraction and atomic force microscopy (AFM). Scaling law analysis was performed on AFM images to show that the thin film surfaces are self-affine. Fractal dimension of each of the 256 vertical sections along the fast scan direction of a discretized surface, obtained from the AFM height data, was estimated using the Higuchi's algorithm. Hurst exponent was computed from the fractal dimension. The grain sizes, as determined by applying self-correlation function on AFM micrographs, varied with the deposition angle in the same manner as the Hurst exponent.

  19. Low-energy muon [LEM] study of Zn-phthalocyanine and ZnO thin films

    NASA Astrophysics Data System (ADS)

    Alberto, H. V.; Piroto Duarte, J.; Weidinger, A.; Vilão, R. C.; Gil, J. M.; Ayres de Campos, N.; Fostiropoulos, K.; Prokscha, T.; Suter, A.; Morenzoni, E.

    2009-04-01

    Implantation of low-energy muons in zinc-phthalocyanine (ZnPc) thin-films leads to the formation of muoniated radical states, the fast decaying of the μSR signal at low fields being a clear indication of muonium formation. The formation probability of these paramagnetic states is independent of the implantation depth and amounts, as in the bulk, to approximately 100% of all muons. In these molecular crystals the formation of muonium is a highly local effect and is fairly independent of crystalline structure and defects in the sample. In contrast to that, in vapour-grown ZnO films the paramagnetic signal known from bulk experiments is not observed, even for the deeper implantations. We suggest that in this case muonium is not formed due to the low concentration of free electrons. In these strongly distorted films, electrons are captured at defects and are not available for muonium formation.

  20. Influence of Te and Se doping on ZnO films growth by SILAR method

    SciTech Connect

    Güney, Harun; Duman, Çağlar

    2016-04-18

    The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

  1. Influence of Te and Se doping on ZnO films growth by SILAR method

    NASA Astrophysics Data System (ADS)

    Güney, Harun; Duman, Ćaǧlar

    2016-04-01

    The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

  2. Temperature dependence of the spin relaxation in highly degenerate ZnO thin films

    SciTech Connect

    Prestgard, M. C.; Siegel, G.; Tiwari, A.; Roundy, R.; Raikh, M.

    2015-02-28

    Zinc oxide is considered a potential candidate for fabricating next-generation transparent spintronic devices. However, before this can be achieved, a thorough scientific understanding of the various spin transport and relaxation processes undergone in this material is essential. In the present paper, we are reporting our investigations into these processes via temperature dependent Hanle experiments. ZnO thin films were deposited on c-axis sapphire substrates using a pulsed laser deposition technique. Careful structural, optical, and electrical characterizations of the films were performed. Temperature dependent non-local Hanle measurements were carried out using an all-electrical scheme for spin injection and detection over the temperature range of 20–300 K. From the Hanle data, spin relaxation time in the films was determined at different temperatures. A detailed analysis of the data showed that the temperature dependence of spin relaxation time follows the linear-in-momentum Dyakonov-Perel mechanism.

  3. Effects of Annealing Temperature on Properties of Ti-Ga–Doped ZnO Films Deposited on Flexible Substrates

    PubMed Central

    Chen, Tao-Hsing; Chen, Ting-You

    2015-01-01

    An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga–doped ZnO films deposited on polyimide (PI) flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction (XRD) analysis results show that all of the films have a strong (002) Ga doped ZnO (GZO) preferential orientation. As the annealing temperature is increased to 400 °C, the optical transmittance increases and the electrical resistivity decreases. However, as the temperature is further increased to 450 °C, the transmittance reduces and the resistivity increases due to a carbonization of the PI substrate. Finally, the crystallinity of the ZnO film improves with an increasing annealing temperature only up to 400 °C and is accompanied by a smaller crystallite size and a lower surface roughness.

  4. Sol-gel synthesis and characterization of undoped and Al-doped ZnO thin films for memristive application

    NASA Astrophysics Data System (ADS)

    Ayana, Dawit G.; Prusakova, Valentina; Collini, Cristian; Nardi, Marco V.; Tatti, Roberta; Bortolotti, Mauro; Lorenzelli, Leandro; Chiappini, Andrea; Chiasera, Alessandro; Ferrari, Maurizio; Lunelli, Lorenzo; Dirè, Sandra

    2016-11-01

    The Sol-gel route is a versatile method to fabricate multi-layer, dense and homogeneous ZnO thin films with a controlled thickness and defects for a memristive application. In this work, sol-gel derived multi-layer undoped and Al-doped ZnO thin films were prepared by a spin-coating technique on SiO2/Ti/Pt and silica glass substrates. The effect of both Al doping and curing conditions on the structural and morphological features of ZnO films was investigated by complementary techniques, including electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction analysis. Electrical measurements were performed on SiO2/Ti/Pt/ZnO/Pt(dishes) and SiO2/Ti/Pt/ZnO(Al)/Pt(dishes) fabricated memristive cells and preliminary current-voltage curves were acquired.

  5. Investigation on the physical properties of C-doped ZnO thin films deposited by the thermionic vacuum arc

    NASA Astrophysics Data System (ADS)

    Mohammadigharehbagh, Reza; Özen, Soner; Hakan Yudar, H.; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan

    2017-01-01

    The aim of this study is to determine some physical properties of C-doped ZnO coated on a glass substrate by using the thermionic vacuum arc method. The produced C-doped ZnO thin film is characterized by using several analysis techniques. The produced thin film has a cubic crystal structure, high transmittance in the visible region, symmetrical surface distribution, and optical band gap energy of 3.34 eV. According to the XRD analysis of the produced thin film, it is a fullerene (C60)-doped polycrystalline ZnO. Hardness value and Young's modulus value were determined as 8 GPa and 140 GPa, respectively. These physical properties are adequate for future transparent electrode applications.

  6. Synthesis of colloidal Mn2+:ZnO quantum dots and high-TC ferromagnetic nanocrystalline thin films.

    PubMed

    Norberg, Nick S; Kittilstved, Kevin R; Amonette, James E; Kukkadapu, Ravi K; Schwartz, Dana A; Gamelin, Daniel R

    2004-08-04

    We report the synthesis of colloidal Mn(2+)-doped ZnO (Mn(2+):ZnO) quantum dots and the preparation of room-temperature ferromagnetic nanocrystalline thin films. Mn(2+):ZnO nanocrystals were prepared by a hydrolysis and condensation reaction in DMSO under atmospheric conditions. Synthesis was monitored by electronic absorption and electron paramagnetic resonance (EPR) spectroscopies. Zn(OAc)(2) was found to strongly inhibit oxidation of Mn(2+) by O(2), allowing the synthesis of Mn(2+):ZnO to be performed aerobically. Mn(2+) ions were removed from the surfaces of as-prepared nanocrystals using dodecylamine to yield high-quality internally doped Mn(2+):ZnO colloids of nearly spherical shape and uniform diameter (6.1 +/- 0.7 nm). Simulations of the highly resolved X- and Q-band nanocrystal EPR spectra, combined with quantitative analysis of magnetic susceptibilities, confirmed that the manganese is substitutionally incorporated into the ZnO nanocrystals as Mn(2+) with very homogeneous speciation, differing from bulk Mn(2+):ZnO only in the magnitude of D-strain. Robust ferromagnetism was observed in spin-coated thin films of the nanocrystals, with 300 K saturation moments as large as 1.35 micro(B)/Mn(2+) and T(C) > 350 K. A distinct ferromagnetic resonance signal was observed in the EPR spectra of the ferromagnetic films. The occurrence of ferromagnetism in Mn(2+):ZnO and its dependence on synthetic variables are discussed in the context of these and previous theoretical and experimental results.

  7. ZnO double layer film with a novel organic sensitizer as an efficient photoelectrode for dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Lee, Chuan-Pei; Chen, Ping-Wei; Li, Chun-Ting; Huang, Yi-June; Li, Sie-Rong; Chang, Ling-Yu; Chen, Pei-Yu; Lin, Lu-Yin; Vittal, R.; Sun, Shih-Sheng; Lin, Jiang-Jen; Ho, Kuo-Chuan

    2016-09-01

    A novel organic sensitizer, coded CR147, is applied to sensitize a ZnO-based dye-sensitized solar cell (DSSC). The common problem of ZnO dissolution and Zn2+/dye agglomeration, caused by the use of ruthenium-based dyes, is solved by the application of this CR147 dye. The highest power conversion efficiency (η) of 4.77% is achieved for the DSSC using a photoanode with a film of commercial ZnO nanoparticles (Csbnd ZnO) and the CR147 dye, while the η is only 3.41% for the DSSC with the commercial N719 dye. The cell performance with the CR147 dye is further improved by using a photoanode with the double layer ZnO film (D-ZnO), composed of an underlayer with coral-like ZnO nanocrystals and an overlayer with hexagonal club-like ZnO submicrocrystals. The DSSC with the D-ZnO film exhibits an η of 6.89%, which is ca. 45% higher than that of the DSSC with the Csbnd ZnO film (4.77%). This higher efficiency is attributed to the superior charge transfer and light-scattering abilities provided by coral-like ZnO nanocrystals and hexagonal clubs-like ZnO submicrocrystals, respectively, with reference to these parameters of Csbnd ZnO.

  8. Growth and conduction mechanism of As-doped p-type ZnO thin films deposited by MOCVD

    SciTech Connect

    Ma, Y.; Gao, Q.; Wu, G.G.; Li, W.C.; Gao, F.B.; Yin, J.Z.; Zhang, B.L.; Du, G.T.

    2013-03-15

    Highlight: ► P-type As-doped ZnO thin films was fabricated by MOCVD after post-growth annealing. ► The formation mechanism of p-ZnO with high hole concentration above 10{sup 19} cm{sup −3} was elucidated. ► Besides As{sub Zn}–2V{sub Zn} complex, C impurities also played an important role in realizing p-ZnO. ► The formations of As{sub O} and O-C-O complex were partially contributed to the p-type ZnO: As films. - Abstract: As-doped p-type ZnO thin films were fabricated by metal organic chemical vapor deposition (MOCVD) after in situ annealing in a vacuum. The p-type conduction mechanism was suggested by the analysis of X-ray photoelectron spectroscopy and ultraviolet photoemission spectroscopy. It was found that most of the As dopants in p-ZnO thin films formed As{sub Zn}–2V{sub Zn} shallow acceptor complex, simultaneously, carbon impurities also played an important role in realizing p-type conductivity in ZnO. Substitutional carbon on oxygen site created passivated defect bands by combining with Ga atoms due to the donor-acceptor pair Coulomb binding, which shifted the valence-band maximum upwards for ZnO and thus increased the hole concentration.

  9. Nitrogen-doped p-type ZnO films prepared from nitrogen gas radio-frequency magnetron sputtering

    SciTech Connect

    Tu, M.-L.; Su, Y.-K.; Ma, C.-Y.

    2006-09-01

    Wide band gap nitrogen-doped p-type ZnO films are prepared by radio-frequency magnetron sputtering from a 99.99% purity ZnO target. The sputtering gas is Ar mixed with various flow rates of nitrogen gas. Hole concentrations increase from 1.89x10{sup 15} to 2.11x10{sup 19} cm{sup -3} as the N{sub 2} flow rate decreases from 15 to 6 SCCM (SCCM denotes cubic centimeter per minute at STP), i.e., increasing N{sub 2} flow rate above 6 SCCM decreases the p-type carrier concentration. Microphotoluminescence (PL) spectra peaks are in the near-UV range and change from 384 nm (3.23 eV) to 374 nm (3.32 eV) with increasing N{sub 2} flow rate. The PL peaks agree with the band gap of bulk ZnO, which comes from the recombination of free excitons. Raman spectra show six peaks: 436 (E{sub 2} high-frequency phonon mode for undoped ZnO film), 581 [A{sub 1} (LO) mode in ZnO:N film], 275, 508, 640, and 854 cm{sup -1} (local vibrational modes of Raman features in N-doped ZnO film)

  10. Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films

    SciTech Connect

    Banerjee, P; Lee, W. J.; Bae, K. R.; Lee, Sang Bok; Rubloff, Gary W

    2010-01-01

    Al-doped ZnO (AZO) films of ~100nm thickness with various Aldoping were prepared at 150°C by atomic layer deposition on quartz substrates. At low Aldoping, the films were strongly textured along the [100] direction, while at higher Aldoping the films remained amorphous. Atomic force microscopy results showed that Al–O cycles when inserted in a ZnOfilm, corresponding to a few atomic percent Al, could remarkably reduce the surface roughness of the films. Hall measurements revealed a maximum mobility of 17.7cm{sup 2} /Vs . Film resistivity reached a minima of 4.4×10{sup -3} Ωcm whereas the carrier concentration reached a maxima of 1.7×10{sup 20} cm{sup -3} , at 3 at.% Al. The band gap of AZO films varied from 3.23 eV for undoped ZnOfilms to 3.73 eV for AZO films with 24.6 at.% Al. Optical transmittance over 80% was obtained in the visible region. The detrimental impact of increased Al resulting in decreased conductivity due to doping past 3.0 at.% is evident in the x-ray diffraction data, as an abrupt increase in the optical band gap and as a deviation from the Burstein–Moss effect.

  11. Studies on visible light photocatalytic and antibacterial activities of nanostructured cobalt doped ZnO thin films prepared by sol-gel spin coating method

    NASA Astrophysics Data System (ADS)

    Poongodi, G.; Anandan, P.; Kumar, R. Mohan; Jayavel, R.

    2015-09-01

    Nanostructured cobalt doped ZnO thin films were deposited on glass substrate by sol-gel spin coating technique and characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and UV-Vis spectroscopy. The XRD results showed that the thin films were well crystalline with hexagonal wurtzite structure. The results of EDAX and XPS revealed that Co was doped into ZnO structure. FESEM images revealed that the films possess granular morphology without any crack and confirm that Co doping decreases the grain size. UV-Vis transmission spectra show that the substitution of Co in ZnO leads to band gap narrowing. The Co doped ZnO films were found to exhibit improved photocatalytic activity for the degradation of methylene blue dye under visible light in comparison with the undoped ZnO film. The decrease in grain size and extending light absorption towards the visible region by Co doping in ZnO film contribute equally to the improved photocatalytic activity. The bactericidal efficiency of Co doped ZnO films were investigated against a Gram negative (Escherichia coli) and a Gram positive (Staphylococcus aureus) bacteria. The optical density (OD) measurement showed better bactericidal activity at higher level of Co doping in ZnO.

  12. Studies on visible light photocatalytic and antibacterial activities of nanostructured cobalt doped ZnO thin films prepared by sol-gel spin coating method.

    PubMed

    Poongodi, G; Anandan, P; Kumar, R Mohan; Jayavel, R

    2015-09-05

    Nanostructured cobalt doped ZnO thin films were deposited on glass substrate by sol-gel spin coating technique and characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and UV-Vis spectroscopy. The XRD results showed that the thin films were well crystalline with hexagonal wurtzite structure. The results of EDAX and XPS revealed that Co was doped into ZnO structure. FESEM images revealed that the films possess granular morphology without any crack and confirm that Co doping decreases the grain size. UV-Vis transmission spectra show that the substitution of Co in ZnO leads to band gap narrowing. The Co doped ZnO films were found to exhibit improved photocatalytic activity for the degradation of methylene blue dye under visible light in comparison with the undoped ZnO film. The decrease in grain size and extending light absorption towards the visible region by Co doping in ZnO film contribute equally to the improved photocatalytic activity. The bactericidal efficiency of Co doped ZnO films were investigated against a Gram negative (Escherichia coli) and a Gram positive (Staphylococcus aureus) bacteria. The optical density (OD) measurement showed better bactericidal activity at higher level of Co doping in ZnO.

  13. Low temperature synthesis wide optical band gap Al and (Al, Na) co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Liu, Yanmei; Fang, Qingqing; Wu, Mingzai; Sun, Xia; Lu, Fei

    2011-01-01

    Al-doped ZnO (AZO) and (Al, Na) co-doped ZnO (ANZO) thin films were prepared via sol-gel technique with an annealing process at temperatures between 450 and 550 °C for 60 min in air ambient, and their structural and optical properties have been investigated. The deposited films exhibited hexagonal zinc oxide structure except annealing at 450 °C. For the 500 °C-annealed samples, the surface morphology was analyzed via scanning electron microscopy, Photoluminescence (PL) of different Na content ANZO thin films showed that there were very obvious violet and blue emission bands between 400 and 500 nm, and intensity of which were enhanced with Na content increasing. Transparency of the films was improved along with increasing Na content. The result of UV indicated the absorb bands appeared obviously red shift with Na doping into ZnO, the optical gaps of all films far beyond 3.37 eV of pure ZnO, and gradually decreased with Na content increasing, this is very virtual for improving photoelectricity performance of transparent conduct oxide (TCO) film. The possible origins responsible for structure and optical properties also had been discussed.

  14. Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Peng; Chen, Nuofu; Yin, Zhigang; Yang, Fei; Peng, Changtao

    2006-04-01

    Sb-doped and undoped ZnO thin films were deposited on Si (1 0 0) substrates by radio frequency (RF) magnetron sputtering. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses revealed that all the films had polycrystalline wurtzite structure and c-axis preferred orientation. Room temperature Hall measurements showed that the as-grown films were n-type and conducting ( ρ˜1-10 Ω cm). Annealing in a nitrogen ambient at 400 °C for 1 h made both samples highly resistive ( ρ>10 3 Ω cm). Increasing the annealing temperature up to 800 °C, the resistivity of the undoped ZnO film decreased gradually, but it increased for the Sb-doped ZnO film. In the end, the Sb-doped ZnO film annealed at 800 °C became semi-insulating with a resistivity of 10 4 Ω cm. In addition, the effects of annealing treatment and Sb-doping on the structural and electrical properties are discussed.

  15. Energy dissipation channels affecting photoluminescence from resonantly excited Er3+ ions doped in epitaxial ZnO host films

    NASA Astrophysics Data System (ADS)

    Akazawa, Housei; Shinojima, Hiroyuki

    2015-04-01

    We identified prerequisite conditions to obtain intense photoluminescence at 1.54 μm from Er3+ ions doped in ZnO host crystals. The epitaxial ZnO:Er films were grown on sapphire C-plane substrates by sputtering, and Er3+ ions were resonantly excited at a wavelength of 532 nm between energy levels of 4I15/2 and 2H11/2. There is a threshold deposition temperature between 500 and 550 °C, above which epitaxial ZnO films become free of miss-oriented domains. In this case, Er3+ ions are outside ZnO crystallites, having the same c-axis lattice parameters as those of undoped ZnO crystals. The improved crystallinity was correlated with enhanced emissions peaking at 1538 nm. Further elevating the deposition temperature up to 650 °C generated cracks in ZnO crystals to relax the lattice mismatch strains, and the emission intensities from cracked regions were three times as large as those from smooth regions. These results can be consistently explained if we assume that emission-active Er3+ ions are those existing at grain boundaries and bonded to single-crystalline ZnO crystallites. In contrast, ZnO:Er films deposited on a ZnO buffer layer exhibited very weak emissions because of their degraded crystallinity when most Er3+ ions were accommodated into ZnO crystals. Optimizing the degree of oxidization of ZnO crystals is another important factor because reduced films suffer from non-radiative decay of excited states. The optimum Er content to obtain intense emissions was between 2 and 4 at. %. When 4 at. % was exceeded, the emission intensity was severely attenuated because of concentration quenching as well as the degradation in crystallinity. Precipitation of Er2O3 crystals was clearly observed at 22 at. % for films deposited above 650 °C. Minimizing the number of defects and impurities in ZnO crystals prevents energy dissipation, thus exclusively utilizing the excitation energy to emissions from Er3+ ions.

  16. ZnO as a buffer layer for growth of BiFeO{sub 3} thin films

    SciTech Connect

    Wu Jiagang; Wang, John

    2010-08-15

    Multiferroic BiFeO{sub 3} thin film was grown on the ZnO-buffered Pt/TiO{sub 2}/SiO{sub 2}/Si(100) substrate by off-axis radio frequency magnetron sputtering, where the ZnO buffer layer gave rise to a strong (110) texture for the BiFeO{sub 3} thin film. The resulting BiFeO{sub 3}/ZnO thin film exhibits diode-like and resistive hysteresis behavior, in which the resistive hysteresis and rectifying ratio are dependent on the applied voltage and temperature. The resistive switching behavior of the BiFeO{sub 3}/ZnO thin film is shown to relate to the trap-controlled space charge limited conduction and interface-limited Fowler-Nordheim tunneling, while the polarization reversal takes place in the BiFeO{sub 3} layer of the heterostructure. The BiFeO{sub 3}/ZnO thin film is also demonstrated with a higher remanent polarization (2P{sub r{approx}}153.6 {mu}C/cm{sup 2}), a much lower dielectric loss (tan {delta}{approx}0.012), and a better fatigue endurance as compared to those of the BiFeO{sub 3} thin film without a ZnO buffer layer, where the much reduced leakage is largely responsible for the enhanced ferroelectric behavior. The ZnO as a buffer layer for BiFeO{sub 3} significantly changes the dielectric relaxation and conduction mechanisms, when the dielectric relaxation and electrical conduction are governed by the thermal excitation of carriers from the second-ionization and short-range motion of oxygen vacancies, respectively, while the relaxation process remains the same over the entire temperature range of 20 to 200 deg. C investigated in the present study.

  17. Physical and Optical Properties of SnO2/ZnO Film Prepared by an RF Magnetron Sputtering Method.

    PubMed

    Park, Jooyoung; Lee, Ikjae; Kim, Jaeyong

    2016-03-01

    Al-, Ga-, and In-doped ZnO thin films are widely used in many technical applications, such as in solar cells and on transparent conducting oxides having high optical transmission and low resistivity values. We prepared SnO2-doped ZnO thin films on quartz substrates by using an RF magnetron sputtering method at a substrate temperature of 350 degrees C. The ratio of SnO2 to ZnO was varied from 0 to 5:5 to investigate the effects of Sn on structure and physical properties of ZnO film. The samples were synthesized at a base pressure of 1.3 x 10(-4) Pa with a working pressure of 1.3 Pa and an RF power of 40 W under Ar atmosphere. The results of X-ray diffraction data revealed that pure ZnO films exhibit a strong (002) orientation and a polycrystalline wurzite hexagonal structure. However, as increasing the SnO2 concentration, ZnO transforms to an amorphous phase. The results of the Hall-effect-measurement system revealed that the resistivity values of the films increased as increasing the doping level of SnO2. The AFM data of morphology and microstructure showed that the grain size decreased with increasing SnO2 contents while the total area of grain the boundary increased. The average value of the transmittance of the films in the visible light range was 80-95% and was shifted toward to the shorter wavelengths of the absorption edges with increasing SnO2 contents.

  18. Improved efficiency of the chemical bath deposition method during growth of ZnO thin films

    SciTech Connect

    Ortega-Lopez, Mauricio; Avila-Garcia, Alejandro; Albor-Aguilera, M.L.; Resendiz, V.M. Sanchez

    2003-06-19

    Chemical bath deposition (CBD) is an inexpensive and low temperature method (25-90 deg. C) that allows to deposit large area semiconductor thin films. However, the extent of the desired heterogeneous reaction upon the substrate surface is limited first by the competing homogeneous reaction, which is responsible for colloidal particles formation in the bulk solution, and second, by the material deposition on the CBD reactor walls. Therefore, the CBD method exhibits low efficiency in terms of profiting the whole amount of starting materials. The present work describes a procedure to deposit ZnO thin films by CBD in an efficient way, since it offers the possibility to minimize both the undesirable homogeneous reaction in the bulk solution and the material deposition on the CBD reactor walls. In a first stage, zinc peroxide (ZnO{sub 2}) crystallizing with cubic structure is obtained. This compound shows a good average transparency (90%) and an optical bandgap of 4.2 eV. After an annealing process, the ZnO{sub 2} suffers a transformation toward polycrystalline ZnO with hexagonal structure and 3.25 eV of optical bandgap. The surface morphology of the films, analyzed by atomic force microscope (AFM), reveals three-dimensional growth features as well as no colloidal particles upon the surface, therefore indicating the predominance of the heterogeneous reaction during the growth.

  19. Intrinsic and spatially nonuniform ferromagnetism in Co-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Tseng, L. T.; Suter, A.; Wang, Y. R.; Xiang, F. X.; Bian, P.; Ding, X.; Tseng, A.; Hu, H. L.; Fan, H. M.; Zheng, R. K.; Wang, X. L.; Salman, Z.; Prokscha, T.; Suzuki, K.; Liu, R.; Li, S.; Morenzoni, E.; Yi, J. B.

    2017-09-01

    Co doped ZnO films have been deposited by a laser-molecular beam epitaxy system. X-ray diffraction and UV spectra analysis show that Co effectively substitutes the Zn site. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy analysis indicate that there are no clusters. Co dopants are uniformly distributed in ZnO film. Ferromagnetic ordering is observed in all samples deposited under an oxygen partial pressure, PO2=10-3 , 10-5, and 10-7 torr, respectively. However, the magnetization of PO2=10-3 and 10-5 is very small at room temperature. At low temperature, the ferromagnetic ordering is enhanced. Muon spin relaxation (μ SR ) measurements confirm the ferromagnetism in all samples, and the results are consistent with magnetization measurements. From μ SR and TEM analysis, the film deposited under PO2=10-7 torr shows intrinsic ferromagnetism. However, the volume fraction of the ferromagnetism phase is approximately 70%, suggesting that the ferromagnetism is not carrier mediated. Resistivity versus temperature measurements indicate Efros variable range hopping dominates the conductivity. From the above results, we can confirm that a bound magnetic polaron is the origin of the ferromagnetism.

  20. Exploration of Al-Doped ZnO in Photovoltaic Thin Films

    NASA Astrophysics Data System (ADS)

    Ciccarino, Christopher; Sahiner, M. Alper

    The electrical properties of Al doped ZnO-based thin films represent a potential advancement in the push for increasing solar cell efficiency. Doping with Aluminum will theoretically decrease resistivity of the film and therefore achieve this potential as a viable option in the P-N junction phase of photovoltaic cells. The n-type semi-conductive characteristics of the ZnO layer will theoretically be optimized with the addition of Aluminum carriers. In this study, Aluminum doping concentrations ranging from 1-3% by mass were produced, analyzed, and compared. Films were developed onto ITO coated glass using the Pulsed Laser Deposition technique. Target thickness was 250 nm and ellipsometry measurements showed uniformity and accuracy in this regard. Active dopant concentrations were determined using Hall Effect measurements. Efficiency measurements showed possible applications of this doped compound, with upwards of 7% efficiency measured, using a Keithley 2602 SourceMeter set-up. XRD scans showed highly crystalline structures, with effective Al intertwining of the hexagonal wurtzile ZnO molecular structure. This alone indicates a promising future of collaboration between these two materials.

  1. The roles of buffer layer thickness on the properties of the ZnO epitaxial films

    NASA Astrophysics Data System (ADS)

    Tang, Kun; Huang, Shimin; Gu, Shulin; Zhu, Shunming; Ye, Jiandong; Xu, Zhonghua; Zheng, Youdou

    2016-12-01

    In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

  2. Effects of annealing on properties of ZnO thin films prepared by electrochemical deposition in chloride medium

    NASA Astrophysics Data System (ADS)

    Lupan, O.; Pauporté, T.; Chow, L.; Viana, B.; Pellé, F.; Ono, L. K.; Roldan Cuenya, B.; Heinrich, H.

    2010-01-01

    The development of cost-effective and low-temperature synthesis techniques for the growth of high-quality zinc oxide thin films is paramount for fabrication of ZnO-based optoelectronic devices, especially ultraviolet (UV)-light-emitting diodes, lasers and detectors. We demonstrate that the properties, especially UV emission, observed at room temperature, of electrodeposited ZnO thin films from chloride medium (at 70 °C) on fluor-doped tin oxide (FTO) substrates is strongly influenced by the post-growth thermal annealing treatments. X-ray diffraction (XRD) measurements show that the films have preferably grown along (0 0 2) direction. Thermal annealing in the temperature range of 150-400 °C in air has been carried out for these ZnO thin films. The as-grown films contain chlorine which is partially removed after annealing at 400 °C. Morphological changes upon annealing are discussed in the light of compositional changes observed in the ZnO crystals that constitute the film. The optical quality of ZnO thin films was improved after post-deposition thermal treatment at 150 °C and 400 °C in our experiments due to the reducing of defects levels and of chlorine content. The transmission and absorption spectra become steeper and the optical bandgap red shifted to the single-crystal value. These findings demonstrate that electrodeposition have potential for the growth of high-quality ZnO thin films with reduced defects for device applications.

  3. Alternate deposition and hydrogen doping technique for ZnO thin films

    NASA Astrophysics Data System (ADS)

    Myong, Seung Yeop; Lim, Koeng Su

    2006-08-01

    We propose an alternate deposition and hydrogen doping (ADHD) technique for polycrystalline hydrogen-doped ZnO thin films, which is a sublayer-by-sublayer deposition based on metalorganic chemical vapor deposition and mercury-sensitized photodecomposition of hydrogen doping gas. Compared to conventional post-deposition hydrogen doping, the ADHD process provides superior electrical conductivity, stability, and surface roughness. Photoluminescence spectra measured at 10 K reveal that the ADHD technique improves ultraviolet and violet emissions by suppressing the green and yellow emissions. Therefore, the ADHD technique is shown to be very promising aid to the manufacture of improved transparent conducting electrodes and light emitting materials.

  4. Self-erasing and rewritable wettability patterns on ZnO thin films

    SciTech Connect

    Kekkonen, Ville; Hakola, Antti; Kajava, Timo; Ras, Robin H. A.; Sahramo, Elina; Malm, Jari; Karppinen, Maarit

    2010-07-26

    Self-erasing patterns allow a substrate to be patterned multiple times or could store temporary information for secret communications, and are mostly based on photochromic molecules to change the color of the pattern. Herein we demonstrate self-erasing patterns of wettability on thin ZnO films made by atomic layer deposition. Hydrophilic patterns are written using UV light and decay spontaneously, i.e. become hydrophobic, or are erased aided by vacuum conditions or heat. We demonstrate that these patterns can be applied for channels to confine flow of water without physical walls.

  5. Magnetic field influence on the transient photoresistivity of defect-induced magnetic ZnO films

    NASA Astrophysics Data System (ADS)

    Zapata, C.; Khalid, M.; Simonelli, G.; Villafuerte, M.; Heluani, S. P.; Esquinazi, P.

    2011-09-01

    Magnetic field dependent photoresistivity was measured at 280 K in ZnO ferromagnetic films grown on r-plane Al2O3 under a N2 atmosphere. A correlation between the negative magneto photoresistivity and the existence of defect-induced magnetic order was found. The effect of magnetic field on the transient photoresistivity is to slow down the recombination process enhancing the photocarriers density. The experimental results demonstrate the possibility of tuning photocarriers life time using magnetic field in diluted magnetic semiconductors.

  6. Microstructural and conductivity comparison of Ag films grown on amorphous TiO2 and polycrystalline ZnO

    SciTech Connect

    Dannenberg, Rand; Stach, Eric; Glenn, Darin; Sieck, Peter; Hukari, Kyle

    2001-03-26

    8 nm thick Ag films were sputter deposited onto amorphous TiO{sub 2} underlayers 25 nm thick, and also amorphous TiO{sub 2} (25 nm)/ZnO (5 nm) multiunderlayers. The substrates were back-etched Si with a 50 nm thick LPCVD Si{sub 3}N{sub 4} electron transparent membrane. The ZnO, sputtered onto amorphous TiO{sub 2}, formed a continuous layer with a grain size of 5 nm in diameter, on the order of the film thickness. There are several microstructural differences in the Ag dependent on the underlayers, revealed by TEM. First a strong {l_brace}0001{r_brace} ZnO to {l_brace}111{r_brace} Ag fibre-texture relationship exists. On TiO{sub 2} the Ag microstructure shows many abnormal grains whose average diameter is about 60-80 nm, whereas the films on ZnO show few abnormal grains. The background matrix of normal grains on the TiO{sub 2} is roughly 15 nm, while the normal grain size on the ZnO is about 25 nm. Electron diffraction patterns show that the film on ZnO has a strong {l_brace}111{r_brace} orientation, and dark field images with this diffraction condition have a grain size of about 30 nm. In a region near the center of the TEM grid where there is the greatest local heating during deposition, Ag films grown on amorphous TiO{sub 2} are discontinuous, whereas on ZnO, the film is continuous. When films 8 nm films are grown on solid glass substrates, those with ZnO underlayers have sheet resistances of 5.68 {Omega}/, whereas those on TiO{sub 2} are 7.56 {Omega}/, and when 16 nm thick, the corresponding sheet resistances are 2.7 {Omega}/ and 3.3 {Omega}/. The conductivity difference is very repeatable. The improved conductivity is thought to be a combined effect of reduced grain boundary area per unit volume, the predominance of low grain boundary resistivity Coincidence Site Lattice boundaries from the Ag {l_brace}111{r_brace} orientation, and Ag planarization on ZnO resulting in less groove formation on deposition, concluded from atomic force microscopy.

  7. Twin symmetry texture of energetically condensed niobium thin films on sapphire substrate (a-plane Al2O3)

    SciTech Connect

    Zhao, X.; Phillips, L.; Reece, C. E.; Seo, Kang; Krishnan, M.; Valderrama, E.

    2011-01-01

    An energetic condensation technique, cathodic arc discharge deposition, is used to growepitaxialNiobium(Nb)thin films on a-plane sapphire (hexagonal-closed-packed Al2O3) at moderate substrate heating temperature (<400 °C). The epitaxial Nb(110)/Al2O3(1,1,-2,0) thin films reached a maximum residual resistance ratio (RRR) value 214, despite using a reactor-grade Nbcathode source whose RRR was only 30. The measurements suggest that the film’s density of impurities and structural defects are lower when compared to Nb films produced by other techniques, such as magnetron sputtering, e-beam evaporation or molecular-beam-epitaxy. At lower substrate temperature, textured polycrystalline Nbthin films were created, and the films might have twin symmetry grains with {110} orientations in-plane. The texture was revealed by x-ray diffraction pole figures. The twin symmetry might be caused by a combination effect of the Nb/Al2O3 three-dimensional epitaxial relationship (“3D-Registry” Claassen’s nomenclature) and the “Volmer-Weber” (Island) growth model. However, pole figures obtained by electron backscattering diffraction (EBSD) found no twin symmetry on the thin films’ topmost surface (~50 nm in depth). The EBSD pole figures showed only one Nb{110} crystal plane orientation. Finally, a possible mechanism is suggested to explain the differences between the bulk (XRD) and surface (EBSD) pole figures.

  8. Organic photovoltaic cells based on ZnO thin film electrodes.

    PubMed

    Ghica, C; Ion, L; Epurescu, G; Nistor, L; Antohe, S; Dinescu, M

    2010-02-01

    Due to its wide band-gap (ca. 3.4 eV), ZnO is a possible candidate material to be used as transparent electrode for a new class of photovoltaic (PV) cells. Also, an increased interest for the photovoltaic properties of several organic monomers and polymers (merocyanines, phthalocyanines and porphyrins) was noticed, because of their high optical absorption in the visible region of the spectrum allowing them to be used as potential inexpensive materials for solar cells. Preparation and properties of CuPc (copper phthalocyanine) based photovoltaic cells using ZnO thin films as transparent conductor electrodes are presented in this paper. ZnO layers are grown by pulsed laser deposition, while the organic layers are obtained by thermal evaporation. Structural characterization is performed by electron microscopy. Optical and transport properties of the mutilayered structures are obtained by electrical and spectro-photometric measurements. The influence of the ZnO-polymer interface on the external quantum efficiency (EQE) of the photovoltaic cell is clearly evidenced by our measurements.

  9. Characteristics of ZnO thin films doped by various elements

    NASA Astrophysics Data System (ADS)

    Kahraman, S.; Çakmak, H. M.; Çetinkaya, S.; Bayansal, F.; Çetinkara, H. A.; Güder, H. S.

    2013-01-01

    We have investigated the effects of Al, K and Co dopant elements on the properties of ZnO thin films deposited by CBD method on glass substrates. Changing in morphology, structural parameters, ionization energies of impurity levels, absorption behavior and optical band gap values were investigated through scanning electron microscopy (SEM), X-Ray diffraction (XRD), resistance-temperature measurement (R-T) and ultraviolet-visible spectroscopy (UV-vis) techniques. From the SEM observations, various morphologies (rod-like, flower-like and rice-like) were observed. Those morphological variations were attributed to the change in stable growth mechanism of intrinsic ZnO, induced by different atomic radius and different electronegativity of dopants. XRD results indicated that all orientations are well indexed to hexagonal phase crystalline ZnO. The impurity level ionization energy values (ΔE) were estimated as 0.32/0.13/0.07 eV; 0.34/0.15 eV; 0.40/0.13 eV and 0.48/0.22 eV for the Al, K, Co doped samples and i-ZnO, respectively. Optical band gap values were found that the doped samples' were higher than the intrinsic one's. This increasing (blue shift) was attributed to a deterioration which occurred in the lattice of the structures after doping. This effect was also supported by the structural results.

  10. Deposition of F-doped ZnO transparent thin films using ZnF2-doped ZnO target under different sputtering substrate temperatures.

    PubMed

    Wang, Fang-Hsing; Yang, Cheng-Fu; Lee, Yen-Hsien

    2014-02-26

    Highly transparent and conducting fluorine-doped ZnO (FZO) thin films were deposited onto glass substrates by radio-frequency (RF) magnetron sputtering, using 1.5 wt% zinc fluoride (ZnF2)-doped ZnO as sputtering target. Structural, electrical, and optical properties of the FZO thin films were investigated as a function of substrate temperature ranging from room temperature (RT) to 300°C. The cross-sectional scanning electron microscopy (SEM) observation and X-ray diffraction analyses showed that the FZO thin films were of polycrystalline nature with a preferential growth along (002) plane perpendicular to the surface of the glass substrate. Secondary ion mass spectrometry (SIMS) analyses of the FZO thin films showed that there was incorporation of F atoms in the FZO thin films, even if the substrate temperature was 300°C. Finally, the effect of substrate temperature on the transmittance ratio, optical energy gap, Hall mobility, carrier concentration, and resistivity of the FZO thin films was also investigated.

  11. The Effects of Thermal Annealing on ZnO Thin Films Produced by Spin-Coating Method on Quartz Substrates

    NASA Astrophysics Data System (ADS)

    Ertek, Özlem; Okur, İbrahim

    2015-07-01

    In this work, zinc oxide (ZnO) thin films on quartz substrates were fabricated using the spin-coating method. Thermal annealings from to have been performed in increments and for two annealing durations (0.5 h and 8 h). X-ray diffraction (XRD) spectra, scanning electron microscopy micrographs, and UV-Vis absorption spectra of all the samples have been elucidated from mechanical and optical points of view. It has been observed that for all annealing temperatures, the crystal phase has been obtained. After annealings, a new crystal phase related to (willemite) has also been appeared in XRD spectra. This phase remained stable up to annealing together with the ZnO crystal phase. It has been found that the nano/micro rod diameters of the ZnO crystals reach to a maximum at the annealing for both annealing durations. For annealings, ZnO nanorods appeared to be split into two homogeneous nanorods of length of and of width of (350 nm) which was not the case for all other annealing temperatures. After annealings, ZnO nano/micro rods started to disappear and formed homogeneous ZnO thin films.

  12. Study of the surface properties of ZnO nanocolumns used for thin-film solar cells.

    PubMed

    Neykova, Neda; Stuchlik, Jiri; Hruska, Karel; Poruba, Ales; Remes, Zdenek; Pop-Georgievski, Ognen

    2017-01-01

    Densely packed ZnO nanocolumns (NCs), perpendicularly oriented to the fused-silica substrates were directly grown under hydrothermal conditions at 90 °C, with a growth rate of around 0.2 μm/h. The morphology of the nanostructures was visualized and analyzed by scanning electron microscopy (SEM). The surface properties of ZnO NCs and the binding state of present elements were investigated before and after different plasma treatments, typically used in plasma-enhanced CVD solar cell deposition processes, by X-ray photoelectron spectroscopy (XPS). Photothermal deflection spectroscopy (PDS) was used to investigate the optical and photoelectrical characteristics of the ZnO NCs, and the changes induced to the absorptance by the plasma treatments. A strong impact of hydrogen plasma treatment on the free-carrier and defect absorption of ZnO NCs has been directly detected in the PDS spectra. Although oxygen plasma treatment was proven to be more efficient in the surface activation of the ZnO NC, the PDS analysis showed that the plasma treatment left the optical and photoelectrical features of the ZnO NCs intact. Thus, it was proven that the selected oxygen plasma treatment can be of great benefit for the development of thin film solar cells based on ZnO NCs.

  13. Study of the surface properties of ZnO nanocolumns used for thin-film solar cells

    PubMed Central

    Stuchlik, Jiri; Hruska, Karel; Poruba, Ales; Remes, Zdenek; Pop-Georgievski, Ognen

    2017-01-01

    Densely packed ZnO nanocolumns (NCs), perpendicularly oriented to the fused-silica substrates were directly grown under hydrothermal conditions at 90 °C, with a growth rate of around 0.2 μm/h. The morphology of the nanostructures was visualized and analyzed by scanning electron microscopy (SEM). The surface properties of ZnO NCs and the binding state of present elements were investigated before and after different plasma treatments, typically used in plasma-enhanced CVD solar cell deposition processes, by X-ray photoelectron spectroscopy (XPS). Photothermal deflection spectroscopy (PDS) was used to investigate the optical and photoelectrical characteristics of the ZnO NCs, and the changes induced to the absorptance by the plasma treatments. A strong impact of hydrogen plasma treatment on the free-carrier and defect absorption of ZnO NCs has been directly detected in the PDS spectra. Although oxygen plasma treatment was proven to be more efficient in the surface activation of the ZnO NC, the PDS analysis showed that the plasma treatment left the optical and photoelectrical features of the ZnO NCs intact. Thus, it was proven that the selected oxygen plasma treatment can be of great benefit for the development of thin film solar cells based on ZnO NCs. PMID:28326235

  14. Effects of Precursor Concentration on Structural and Optical Properties of ZnO Thin Films Grown on Muscovite Mica Substrates by Sol-Gel Spin-Coating.

    PubMed

    Kim, Younggyu; Leem, Jae-Young

    2016-05-01

    The structural and optical properties of the ZnO thin films grown on mica substrates for different precursor concentrations were investigated. The surface morphologies of all the samples indicated that they consisted of granular structures with spherical nano-sized crystallites. The thickness of the ZnO thin films increased significantly and the optical band gap exhibited a blue shift with an increase in the precursor concentration. It is remarkable that the highest I(NBE)/I(DLE) ratio was observed for the ZnO thin film with 0.8 M precursor concentration, even though cracks formed on the surface of this film.

  15. Friction and wear behavior of nitrogen-doped ZnO thin films deposited via MOCVD under dry contact

    DOE PAGES

    Mbamara, U. S.; Olofinjana, B.; Ajayi, O. O.; ...

    2016-02-01

    Most researches on doped ZnO thin films are tilted toward their applications in optoelectronics and semiconductor devices. Research on their tribological properties is still unfolding. In this work, nitrogen-doped ZnO thin films were deposited on 304 L stainless steel substrate from a combination of zinc acetate and ammonium acetate precursor by MOCVD technique. Compositional and structural studies of the films were done using Rutherford Backscattering Spectroscopy (RBS) and X-ray Diffraction (XRD). The frictional behavior of the thin film coatings was evaluated using a ball-on-flat configuration in reciprocating sliding under dry contact condition. After friction test, the flat and ball counter-facemore » surfaces were examined to assess the wear dimension and failure mechanism. In conclusion, both friction behavior and wear (in the ball counter-face) were observed to be dependent on the crystallinity and thickness of the thin film coatings.« less

  16. Electrical and optical properties of Al doped Zno film prepared by spray pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Shrestha, Shankar Prasad; Basnet, Pradeep

    2008-04-01

    Transparent conducting thin films of zinc oxides and aluminum doped zinc oxide (AZO) were prepared by the spray pyrolysis technique using an aqueous solution of dehydrate zinc acetate (CH 3COOH. 2H IIO, pure- Merck A. R. grade) and hex hydrate aluminum chloride (AlCl 3 .6H IIO) on the micro glass slides. The prepared thin films are found to be highly adherent to the substrate and possess uniform conduction. The optical and electrical properties of the film were investigated in terms of different Al concentration in the starting solution and different substrate temperature. Four probe method in Van der pauw configuration was used for electrical resistivity measurements. The resistivity of Al doped film is observed to vary with doping concentration. The lowest resistivity is observed in the film doping with 2 at % [Al/Zn]. The Hall coefficient measurements show that both ZnO and AZO show the n-type conduction. The carrier concentration was observed to be highest at 2 at% of Al doping. The optical measurements of all the samples with aluminum concentrations was found to be >85 % showing the film to be highly transparent in nature. With increase in Al concentration, the optical band gap was observed increase from 3.27 eV to 3.41 eV.

  17. Effects of In, Al and Sn dopants on the structural and optical properties of ZnO thin films.

    PubMed

    Caglar, Yasemin; Ilican, Saliha; Caglar, Mujdat; Yakuphanoglu, Fahrettin

    2007-07-01

    Effect of In, Al and Sn dopants on the optical and structural properties of ZnO thin films have been investigated by X-ray diffraction technique and optical characterization method. X-ray diffraction patterns confirm that the films have polycrystalline nature. The thin films have (002) as the preferred orientation. This (002) preferred orientation is due to the minimal surface energy which the hexagonal structure, c-plane to the ZnO crystallites, corresponds to the densest packed plane. The grain size values of the films are found to be 29.0, 35.2 and 39.5 nm for In, Al and Sn doped ZnO thin films, respectively. The optical band gaps of the films were calculated. The absorption edge shifts to the lower wavelengths with In, Al and Sn dopants. The inclusion of dopant into films expands also width of localized states as E(UIn)>E(UAl)>E(USn). The refractive index dispersion curves obey the single oscillator model. The dispersion parameters and optical constants of the films were determined. These parameters changed with In, Al and Sn dopants.

  18. Sol-gel derived Al-Ga co-doped transparent conducting oxide ZnO thin films

    SciTech Connect

    Serrao, Felcy Jyothi; Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2016-05-23

    Transparent conducting ZnO doped with Al, Ga and co-doped Al and Ga (1:1) (AGZO) thin films were grown on glass substrates by cost effective sol-gel spin coating method. The XRD results showed that all the films are polycrystalline in nature and highly textured along the (002) plane. Enhanced grain size was observed in the case of AGZO thin films. The transmittance of all the films was more than 83% in the visible region of light. The electrical properties such as carrier concentration and mobility values are increased in case of AGZO compared to that of Al and Ga doped ZnO thin films. The minimum resistivity of 2.54 × 10{sup −3} Ω cm was observed in AGZO thin film. The co-doped AGZO thin films exhibited minimum resistivity and high optical transmittance, indicate that co-doped ZnO thin films could be used in transparent electronics mainly in display applications.

  19. Insight of dipole surface plasmon mediated optoelectronic property tuning of ZnO thin films using Au

    NASA Astrophysics Data System (ADS)

    Dixit, Tejendra; Shukla, Mayoorika; Palani, I. A.; Singh, Vipul

    2016-12-01

    Surface plasmon mediated photoluminescence (PL) studies of ZnO, ZnO/Au, ZnO/Au/ZnO and Au/ZnO films have been investigated. An enhancement of UV and visible light emission has been observed in ZnO/Au and ZnO/Au/ZnO films, compared to that of ZnO thin films, while for Au/ZnO films quenching of PL intensity was observed. Excitation intensity (EI) dependent PL spectra have shown dominance of horizontal dipole surface plasmon mode for ZnO/Au/ZnO, ZnO/Au samples, which led enhanced greenish-yellow and orange emissions respectively. Moreover, confocal laser scanning microscope measurements and diffuse reflectance spectroscopy were conducted to investigate the mechanism behind the variations and involvement of Urbach tail. UV and visible region absorption were selectively enhanced by varying the Au and ZnO configuration and can be assigned to the interaction of the dipole surface plasmon resonance with localized trapping levels and phonon subsystem. The excellent photoluminescence performance has immense potential for ZnO thin film based optoelectronic devices.

  20. Effect of annealing on the structural, morphological and photoluminescence properties of ZnO thin films prepared by spin coating.

    PubMed

    Kumar, Vinod; Kumar, Vijay; Som, S; Yousif, A; Singh, Neetu; Ntwaeaborwa, O M; Kapoor, Avinashi; Swart, H C

    2014-08-15

    Zinc oxide (ZnO) thin films were deposited on silicon substrates by a sol-gel method using the spin coating technique. The ZnO films were annealed at 700°C in an oxygen environment using different annealing times ranging from 1 to 4 h. It was observed that all the annealed films exhibited a hexagonal wurtzite structure. The particle size increased from 65 to 160 nm with the increase in annealing time, while the roughness of the films increased from 2.3 to 10.6 nm with the increase in the annealing time. Si diffusion from the substrate into the ZnO layer occurred during the annealing process. It is likely that the Si and O2 influenced the emission of the ZnO by reducing the amount of Zn defects and the creation of new oxygen related defects during annealing in the O2 atmosphere. The emission intensity was found to be dependent on the reflectance of the thin films.

  1. MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si

    NASA Astrophysics Data System (ADS)

    Black, Kate; Jones, Anthony C.; Chalker, Paul R.; Gaskell, Jeffrey M.; Murray, Robert T.; Joyce, Tim B.; Rushworth, Simon A.

    2008-03-01

    This paper explores the use of nanostructured zinc oxide (ZnO) films as a compliant buffer layer for the growth of gallium nitride (GaN) on silicon substrates. Thin films of ZnO have been deposited on silicon (1 1 1) substrates by liquid injection metalorganic chemical vapour deposition (MOCVD) using dimethyl zinc-tetrahydrofuran adduct and oxygen. The use of the adduct complex avoids pre-reaction between the dialkyl zinc complex and oxygen which has been observed elsewhere. ZnO films deposited by this method were stoichiometric and of high purity, with no detectable carbon contamination. Films were deposited over a temperature range 350-550 °C, and exhibited a nanowire-like morphology. Subsequent deposition of GaN layers grown by molecular beam epitaxy (MBE) on the ZnO film resulted in the transformation of the nanowires to gallium oxide, accompanied by virtually complete removal of zinc from the layer. A heteroepitaxially oriented ( c-axis) GaN/gallium oxide/silicon structure was produced after the nitride deposition which consisted of characteristic columnar GaN with the GaN[0 0 0 1]||Si [1 1 1]. Selective area electron diffraction of the by-product oxide interlayer showed a polycrystalline-like behaviour that gave rise to a random azimuthal distribution of the GaN grains.

  2. Effect of deposition parameters and strontium doping on characteristics of nanostructured ZnO thin film by chemical bath deposition method

    NASA Astrophysics Data System (ADS)

    Sheeba, N. H.; Naduvath, J.; Abraham, A.; Weiss, M. P.; Diener, Z. J.; Remillard, S. K.; DeYoung, P. A.; Philip, R. R.

    2014-10-01

    Polycrystalline thin films of ZnO and Sr-doped ZnO (ZnO:Sr) on ultrasonically cleaned soda lime glass substrates are synthesized through successive ionic layer adsorption and reaction. The XRD profiles of ZnO and ZnO:Sr films prepared at different number of deposition cycles exhibit hexagonal wurtzite structure with preferred orientation along (002) direction. The crystallites are found to be nano sized, having variation in size with the increase in number of depositions cycles and also with Sr doping. Optical absorbance studies reveal a systematically controllable blueshift in band gap of Sr-doped ZnO films. SEM images indicate enhanced assembling of crystallites to form elongated rods as number of dips increased in Sr doped ZnO. The films are found to be n-type with the Sr doping having little effect on the electrical properties.

  3. Effect of deposition parameters and strontium doping on characteristics of nanostructured ZnO thin film by chemical bath deposition method

    SciTech Connect

    Sheeba, N. H.; Naduvath, J.; Abraham, A. Philip, R. R.; Weiss, M. P. E-mail: zachary.diener@hope.edu E-mail: deyoung@hope.edu; Diener, Z. J. E-mail: zachary.diener@hope.edu E-mail: deyoung@hope.edu; Remillard, S. K. E-mail: zachary.diener@hope.edu E-mail: deyoung@hope.edu; DeYoung, P. A. E-mail: zachary.diener@hope.edu E-mail: deyoung@hope.edu

    2014-10-15

    Polycrystalline thin films of ZnO and Sr-doped ZnO (ZnO:Sr) on ultrasonically cleaned soda lime glass substrates are synthesized through successive ionic layer adsorption and reaction. The XRD profiles of ZnO and ZnO:Sr films prepared at different number of deposition cycles exhibit hexagonal wurtzite structure with preferred orientation along (002) direction. The crystallites are found to be nano sized, having variation in size with the increase in number of depositions cycles and also with Sr doping. Optical absorbance studies reveal a systematically controllable blueshift in band gap of Sr-doped ZnO films. SEM images indicate enhanced assembling of crystallites to form elongated rods as number of dips increased in Sr doped ZnO. The films are found to be n-type with the Sr doping having little effect on the electrical properties.

  4. Influence of parallel vs. perpendicular source geometry on cathodic: Arc efficiency and film quality for generation of ZnO thin films

    NASA Astrophysics Data System (ADS)

    Eno, D. M.; DeLeon, R. L.; Garvey, J. F.

    2014-01-01

    ZnO films have been grown on Si (111) substrates using a modified PAMBD (pulsed arc molecular beam deposition) reactive cathodic arc source employing either O2, N2, or NH3 as carrier gas. Utilizing new source geometry, a two to three fold improvement in source efficiency has been realized. Scanning electron microscopy analysis confirms that this new source configuration gives a significant reduction in marcoparticle contamination and exhibits good crystalline properties for room temperature deposition. ZnO films were grown with this new source and characterized using X-ray diffraction and X-ray photoelectron spectroscopy.

  5. Evidence of Negative Capacitance in Piezoelectric ZnO Thin Films Sputtered on Interdigital Electrodes.

    PubMed

    Laurenti, Marco; Verna, Alessio; Chiolerio, Alessandro

    2015-11-11

    The scaling paradigm known as Moore's Law, with the shrinking of transistors and their doubling on a chip every two years, is going to reach a painful end. Another less-known paradigm, the so-called Koomey's Law, stating that the computing efficiency doubles every 1.57 years, poses other important challenges, since the efficiency of rechargeable energy sources is substantially constant, and any other evolution is based on device architecture only. How can we still increase the computational power/reduce the power consumption of our electronic environments? A first answer to this question comes from the quest for new functionalities. Within this aim, negative capacitance (NC) is becoming one of the most intriguing and studied phenomena since it can be exploited for reducing the aforementioned limiting effects in the downscaling of electronic devices. Here we report the evidence of negative capacitance in 80 nm thick ZnO thin films sputtered on Au interdigital electrodes (IDEs). Highly (002)-oriented ZnO thin films, with a fine-grained surface nanostructure and the desired chemical composition, are deposited at room temperature on different IDEs structures. Direct-current electrical measurements highlighted the semiconducting nature of ZnO (current density in the order of 1 × 10(-3) A/cm(2)). When turned into the alternating current regime (from 20 Hz to 2 MHz) the presence of NC values is observed in the low-frequency range (20-120 Hz). The loss of metal/semiconductor interface charge states under forward bias conditions, together with the presence of oxygen vacancies and piezoelectric/electrostriction effects, is believed to be at the basis of the observed negative behavior, suggesting that ZnO thin-film-based field-effect transistors can be a powerful instrument to go beyond the Boltzmann limit and the downscaling of integrated circuit elements required for the fabrication of portable and miniaturized electronic devices, especially for electric household

  6. ZnO Film UV Photodetector with Enhanced Performance: Heterojunction with CdMoO4 Microplates and the Hot Electron Injection Effect of Au Nanoparticles.

    PubMed

    Ouyang, Weixin; Teng, Feng; Jiang, Mingming; Fang, Xiaosheng

    2017-08-22

    A novel CdMoO4 -ZnO composite film is prepared by spin-coating CdMoO4 microplates on ZnO film and is constructed as a heterojunction photodetector (PD). With an optimized loading amount of CdMoO4 microplates, this composite film PD achieves a ≈18-fold higher responsivity than pure ZnO film PD at 5 V bias under 350 nm (0.15 mW cm(-2) ) UV light illumination, and its decay time shortens to half of the original value. Furthermore, Au nanoparticles are then deposited to modify the CdMoO4 -ZnO composite film, and the as-constructed photodetector with an optimized deposition time of Au nanoparticles yields an approximately two-fold higher photocurrent under the same condition, and the decay time reduces by half. The introduced CdMoO4 microplates form type-II heterojunctions with ZnO film and improve the photoelectric performance. The hot electrons from Au nanoparticles are injected into the CdMoO4 -ZnO composite film, leading to the increased photocurrent. When the light is off, the Schottky barriers formed between Au nanoparticles and CdMoO4 -ZnO composite film block the carrier transportation and accelerate the decay process of current. The study on Au-nanoparticle-modified CdMoO4 -ZnO composite film provides a facile method to construct ZnO film based PD with novel structure and high photoelectric performance. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Resistive switching behavior of RF magnetron sputtered ZnO thin films

    SciTech Connect

    Rajalakshmi, R.; Angappane, S.

    2015-06-24

    The resistive switching characteristics of RF magnetron sputtered zinc oxide thin films have been studied. The x-ray diffraction studies confirm the formation of crystalline ZnO on Pt/TiO{sub 2}/SiO{sub x}/Si substrate. We have fabricated Cu/ZnO/Pt device using a shadow masking technique for resistive switching study. Our Cu/ZnO/Pt device exhibits a unipolar resistive switching behaviour. The switching observed in our device could be related to oxygen vacancies or Cu ions that generate the conducting filaments responsible for resistive switching. We found HRS to LRS resistance ratio of as high as ∼200 for our Cu/ZnO/Pt device. The higher resistance ratio and stability of Cu/ZnO/Pt device would make our RF magnetron sputtered zinc oxide thin films suitable for non volatile memory applications.

  8. Sputter deposition of Al-doped ZnO films with various incident angles

    SciTech Connect

    Sato, Yasushi; Yanagisawa, Kei; Oka, Nobuto; Nakamura, Shin-ichi; Shigesato, Yuzo

    2009-09-15

    Al-doped ZnO (AZO) films were sputter deposited on glass substrates heated at 200 degree sign C under incident angles of sputtered particles at 0 degree sign (incidence normal to substrate), 20 deg., 40 deg., 60 deg., and 80 deg. In the case of normal incidence, x-ray diffraction pole figures show a strong [001] preferred orientation normal to the film surface. In contrast, in the case wherein the incident angles were higher than 60 degree sign , the [001] orientation inclined by 25 deg. - 35 deg. toward the direction of sputtered particles. Transmission electron microscopy revealed that the tilt angle of the [001] orientation increased with increasing angle of the incident sputtered particles, whereas the columnar structure did not show any sign of inclination with respect to the substrate plane.

  9. High electron mobility ZnO film for high-performance inverted polymer solar cells

    NASA Astrophysics Data System (ADS)

    Lv, Peiwen; Chen, Shan-Ci; Zheng, Qingdong; Huang, Feng; Ding, Kai

    2015-04-01

    High-quality ZnO films (ZnO-MS) are prepared via magnetron sputtering deposition with a high mobility of about 2 cm2/(V.s) and are used as electron transport layer for inverted polymer solar cells (PSCs) with polymer poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b']dithiophene-co-3-fluorothieno[3,4-b]thiophene-2-carboxylate]:[6,6]-phenyl C71-butyric acid methyl ester as the active layer. A significant improvement of JSC, about 20% enhancement in contrast to the devices built on sol-gel derived ZnO film (ZnO-Sol), is found in the ZnO-MS based device. High performance ZnO-MS based PSCs exhibit power conversion efficiency (PCE) up to 8.55%, which is much better than the device based on ZnO-Sol (PCE = 7.78%). Further research on cathode materials is promising to achieve higher performance.

  10. Carbon doped ZnO thin film: Unusual nonlinear variation in bandgap and electrical characteristic

    NASA Astrophysics Data System (ADS)

    Sarkar, Debabrata; Ghosh, C. K.; Chattopadhyay, K. K.

    2017-10-01

    Carbon doped zinc oxide thin films (0-10%) were synthesized by DC sputtering technique on glass substrates. The films were polycrystalline in nature and x-ray diffraction studies confirmed synthesis of phase pure ZnO without any dopant-related peaks. Oxidation states of the elements were determined by x-ray photoelectron spectroscopy. From the high resolution x-ray photoelectron spectroscopic study, it has been confirmed that carbon substituted cationic sites along with some segregation of carbon atoms at the grain boundary region. Carbon substitution at the cationic sites caused a non-linear variation in the band gap energy; band gap initially decreased and then increased for higher doping concentration. Ab-initio calculation based on density functional theory has also been performed to support our experimental observation and it is clearly matching the experimental results. An enhanced non-linearity in the current-voltage characteristic with C doping may increase the varistor application of ZnO.

  11. ZnO transparent conductive oxide for thin film silicon solar cells

    NASA Astrophysics Data System (ADS)

    Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

    2010-03-01

    There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

  12. High electron mobility ZnO film for high-performance inverted polymer solar cells

    SciTech Connect

    Lv, Peiwen; Chen, Shan-Ci; Zheng, Qingdong; Huang, Feng Ding, Kai

    2015-04-20

    High-quality ZnO films (ZnO-MS) are prepared via magnetron sputtering deposition with a high mobility of about 2 cm{sup 2}/(V·s) and are used as electron transport layer for inverted polymer solar cells (PSCs) with polymer poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b′] dithiophene-co-3-fluorothieno[3,4-b]thiophene-2-carboxylate]:[6,6]-phenyl C71-butyric acid methyl ester as the active layer. A significant improvement of J{sub SC}, about 20% enhancement in contrast to the devices built on sol-gel derived ZnO film (ZnO-Sol), is found in the ZnO-MS based device. High performance ZnO-MS based PSCs exhibit power conversion efficiency (PCE) up to 8.55%, which is much better than the device based on ZnO-Sol (PCE = 7.78%). Further research on cathode materials is promising to achieve higher performance.

  13. Interaction between O{sub 2} and ZnO films probed by time-dependent second-harmonic generation

    SciTech Connect

    Andersen, S. V.; Vandalon, V.; Bosch, R. H. E. C.; Loo, B. W. H. van de; Kessels, W. M. M.; Pedersen, K.

    2014-02-03

    The interaction between O{sub 2} and ZnO thin films prepared by atomic layer deposition has been investigated by time-dependent second-harmonic generation, by probing the electric field induced by adsorbed oxygen molecules on the surface. The second-harmonic generated signal decays upon laser exposure due to two-photon assisted desorption of O{sub 2}. Blocking and unblocking the laser beam for different time intervals reveals the adsorption rate of O{sub 2} onto ZnO. The results demonstrate that electric field induced second-harmonic generation provides a versatile non-contact probe of the adsorption kinetics of molecules on ZnO thin films.

  14. Optical properties of antimony-doped p-type ZnO films fabricated by pulsed laser deposition

    SciTech Connect

    Pan, X. H.; Guo, W.; Pan, X. Q.; Ye, Z. Z.; He, H. P.; Liu, B.; Che, Y.

    2009-06-01

    We investigated optical properties of Sb-doped p-type ZnO films grown on n-Si (100) substrates by oxygen plasma-assisted pulsed laser deposition. Two acceptor states, with the acceptor levels of 161 and 336 meV, are identified by well-resolved photoluminescence spectra. Under oxygen-rich conditions, the deep acceptor in Sb-doped ZnO film is Zn vacancy. The shallow acceptor is Sb{sub Zn}-2V{sub Zn} complex induced by Sb doping. The origin of p-type behavior in Sb-doped ZnO has been ascribed to the formation of Sb{sub Zn}-2V{sub Zn} complex.

  15. Sol–Gel and Thermally Evaporated Nanostructured Thin ZnO Films for Photocatalytic Degradation of Trichlorophenol

    PubMed Central

    2009-01-01

    In the present work, thermal evaporation and sol–gel coating techniques were applied to fabricate nanostructured thin ZnO films. The phase structure and surface morphology of the obtained films were investigated by X-ray diffractometer (XRD) and scanning electron microscope (SEM), respectively. The topography and 2D profile of the thin ZnO films prepared by both techniques were studied by optical profiler. The results revealed that the thermally evaporated thin film has a comparatively smoother surface of hexagonal wurtzite structure with grain size 12 nm and 51 m2/g. On the other hand, sol–gel films exhibited rough surface with a strong preferred orientation of 25 nm grain size and 27 m2/g surface area. Following deposition process, the obtained films were applied for the photodegradation of 2,4,6-trichlorophenol (TCP) in water in presence of UV irradiation. The concentrations of TCP and its intermediates produced in the solution during the photodegradation were determined by high performance liquid chromatography (HPLC) at defined irradiation times. Complete decay of TCP and its intermediates was observed after 60 min when the thermal evaporated photocatalyst was applied. However, by operating sol–gel catalyst, the concentration of intermediates initially increased and then remained constant with irradiation time. Although the degradation of TCP followed first-order kinetic for both catalysts, higher photocatalytic activity was exhibited by the thermally evaporated ZnO thin film in comparison with sol–gel one. PMID:20596419

  16. Sol-Gel and Thermally Evaporated Nanostructured Thin ZnO Films for Photocatalytic Degradation of Trichlorophenol

    NASA Astrophysics Data System (ADS)

    Abdel Aal, A.; Mahmoud, Sawsan A.; Aboul-Gheit, Ahmed K.

    2009-07-01

    In the present work, thermal evaporation and sol-gel coating techniques were applied to fabricate nanostructured thin ZnO films. The phase structure and surface morphology of the obtained films were investigated by X-ray diffractometer (XRD) and scanning electron microscope (SEM), respectively. The topography and 2D profile of the thin ZnO films prepared by both techniques were studied by optical profiler. The results revealed that the thermally evaporated thin film has a comparatively smoother surface of hexagonal wurtzite structure with grain size 12 nm and 51 m2/g. On the other hand, sol-gel films exhibited rough surface with a strong preferred orientation of 25 nm grain size and 27 m2/g surface area. Following deposition process, the obtained films were applied for the photodegradation of 2,4,6-trichlorophenol (TCP) in water in presence of UV irradiation. The concentrations of TCP and its intermediates produced in the solution during the photodegradation were determined by high performance liquid chromatography (HPLC) at defined irradiation times. Complete decay of TCP and its intermediates was observed after 60 min when the thermal evaporated photocatalyst was applied. However, by operating sol-gel catalyst, the concentration of intermediates initially increased and then remained constant with irradiation time. Although the degradation of TCP followed first-order kinetic for both catalysts, higher photocatalytic activity was exhibited by the thermally evaporated ZnO thin film in comparison with sol-gel one.

  17. Structural; morphological; optical and magnetic properties of Mn doped ferromagnetic ZnO thin film

    NASA Astrophysics Data System (ADS)

    Karmakar, R.; Neogi, S. K.; Banerjee, Aritra; Bandyopadhyay, S.

    2012-12-01

    The structural, optical and magnetic properties of the Zn1-xMnxO (0 < x < 0.05) thin films synthesized by sol-gel technique have been analyzed in the light of modification of the electronic structure and disorder developed in the samples due to Mn doping. The films are of single phase in nature; no formation of any secondary phase has been detected from structural analysis. Absence of magnetic impurity phase in these films has been confirmed from morphological study also. Increasing tendency of lattice parameters and unit cell volume has been observed with increasing Mn doping concentration. The incorporation of Mn2+ ions introduces disorder in the system. That also leads to slight degradation in crystalline quality of the films with increasing doping. The grain size reduces with increase in Mn doping proportion. The band gaps shows red shift with doping and the width of localized states shows an increasing tendency with doping concentration. It is due to the formation of impurity band and trapping of Mn atoms, which leads to the generation of the defect states within the forbidden band. Photoluminescence (PL) spectra show gradual decrease of intensity of exitonic and defect related peaks with increasing Mn doping. Defect mediated intrinsic ferromagnetism has been observed even at room temperature for 5 at% Mn doped ZnO film. The strong presence of antiferromagnetic (AFM) interaction reduces the observed ferromagnetic moments.

  18. Growth of residual stress-free ZnO films on SiO{sub 2}/Si substrate at room temperature for MEMS devices

    SciTech Connect

    Singh, Jitendra; Akhtar, Jamil; Ranwa, Sapana; Kumar, Mahesh

    2015-06-15

    ZnO thick Stress relaxed films were deposited by reactive magnetron sputtering on 2”-wafer of SiO{sub 2}/Si at room temperature. The residual stress of ZnO films was measured by measuring the curvature of wafer using laser scanning method and found in the range of 0.18 x 10{sup 9} to 11.28 x 10{sup 9} dyne/cm{sup 2} with compressive in nature. Sputter pressure changes the deposition rates, which strongly affects the residual stress and surface morphologies of ZnO films. The crystalline wurtzite structure of ZnO films were confirmed by X-ray diffraction and a shift in (0002) diffraction peak of ZnO towards lower 2θ angle was observed with increasing the compressive stress in the films. The band gap of ZnO films shows a red shift from ∼3.275 eV to ∼3.23 eV as compressive stress is increased, unlike the stress for III-nitride materials. A relationship between stress and band gap of ZnO was derived and proposed. The stress-free growth of piezoelectric films is very important for functional devices applications.

  19. Growth of residual stress-free ZnO films on SiO2/Si substrate at room temperature for MEMS devices

    NASA Astrophysics Data System (ADS)

    Singh, Jitendra; Ranwa, Sapana; Akhtar, Jamil; Kumar, Mahesh

    2015-06-01

    ZnO thick Stress relaxed films were deposited by reactive magnetron sputtering on 2"-wafer of SiO2/Si at room temperature. The residual stress of ZnO films was measured by measuring the curvature of wafer using laser scanning method and found in the range of 0.18 x 109 to 11.28 x 109 dyne/cm2 with compressive in nature. Sputter pressure changes the deposition rates, which strongly affects the residual stress and surface morphologies of ZnO films. The crystalline wurtzite structure of ZnO films were confirmed by X-ray diffraction and a shift in (0002) diffraction peak of ZnO towards lower 2θ angle was observed with increasing the compressive stress in the films. The band gap of ZnO films shows a red shift from ˜3.275 eV to ˜3.23 eV as compressive stress is increased, unlike the stress for III-nitride materials. A relationship between stress and band gap of ZnO was derived and proposed. The stress-free growth of piezoelectric films is very important for functional devices applications.

  20. Plasmonic enhancement of UV emission from ZnO thin films induced by Al nano-concave arrays

    NASA Astrophysics Data System (ADS)

    Norek, Małgorzata; Łuka, Grzegorz; Włodarski, Maksymilian

    2016-10-01

    Surface plasmons (SPs) supported by Al nano-concave arrays with increasing interpore distance (Dc) were used to enhance the ultraviolet light emission from ZnO thin films. Two sets of samples were prepared: in the first set the thin ZnO films were deposited directly on Al nanoconcaves (the Al/ZnO samples) and in the second set a 10 nm - Al2O3 spacer was placed between the textured Al and the ZnO films (the Al/Al2O3-ALD/ZnO samples). In the Al/ZnO samples the enhancement was limited by a nonradiative energy dissipation due to the Ohmic loss in the Al metal. However, for the ZnO layer deposited directly on Al nanopits synthesized at 150 V (Dc = 333 ± 18 nm), the largest 9-fold enhancement was obtained by achieving the best energy fit between the near band-edge (NBE) emission from ZnO and the λ(0,1) SPP resonance mode. In the Al/Al2O3-ALD/ZnO samples the amplification of the UV emission was smaller than in the Al/ZnO samples due to a big energy mismatch between the NBE emission and the λ(0,1) plasmonic mode. The results obtained in this work indicate that better tuning of the NBE - λ(0,1) SPP resonance mode coupling is possible through a proper modification of geometrical parameters in the Al/Al2O3-ALD/ZnO system such as Al nano-concave spacing and the thickness of the corresponding layer. This approach will reduce the negative influence of the non-radiative plasmonic modes and most likely will lead to further enhancement of the SP-modulated UV emission from ZnO thin films.