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Sample records for a-si alloy solar

  1. Investigation of the radiation resistance of triple-junction a-Si:H alloy solar cells irradiated with 1.00 MeV protons

    NASA Technical Reports Server (NTRS)

    Lord, Kenneth R., II; Walters, Michael R.; Woodyard, James R.

    1993-01-01

    The effect of 1.00 MeV proton irradiation on hydrogenated amorphous silicon alloy triple-junction solar cells is reported for the first time. The cells were designed for radiation resistance studies and included 0.35 cm(sup 2) active areas on 1.0 by 2.0 cm(sup 2) glass superstrates. Three cells were irradiated through the bottom contact at each of six fluences between 5.10E12 and 1.46E15 cm(sup -2). The effect of the irradiations was determined with light current-voltage measurements. Proton irradiation degraded the cell power densities from 8.0 to 98 percent for the fluences investigated. Annealing irradiated cells at 200 C for two hours restored the power densities to better than 90 percent. The cells exhibited radiation resistances which are superior to cells reported in the literature for fluences less than 1E14 cm(sup -2).

  2. High performance a-Si solar cells and new fabrication methods for a-Si solar cells

    NASA Astrophysics Data System (ADS)

    Nakano, S.; Kuwano, Y.; Ohnishi, M.

    1986-12-01

    The super chamber, a separated UHV reaction-chamber system has been developed. A conversion efficiency of 11.7% was obtained for an a-Si solar cell using a high-quality i-layer deposited by the super chamber, and a p-layer fabricated by a photo-CVD method. As a new material, amorphous superlattice-structure films were fabricated by the photo-CVD method for the first time. Superlattice structure p-layer a-Si solar cells were fabricated, and a conversion efficiency of 10.5% was obtained. For the fabrication of integrated type a-Si solar cell modules, a laser pattering method was investigated. A thermal analysis of the multilayer structure was done. It was confirmed that selective scribing for a-Si, TCO and metal film is possible by controlling the laser power density. Recently developed a-Si solar power generation systems and a-Si solar cell roofing tiles are also described.

  3. OPTOELECTRONIC PROPERTIES AND THE GAP STATE DISTRIBUTION IN a-Si, Ge ALLOYS

    NASA Astrophysics Data System (ADS)

    Aljishi, S.; Smith, Z. E.; Wagner, S.

    In this article we review optical and electronic transport data measured in amorphous silicon-germanium alloys with the goal of identifying the density of states as a function of alloy composition. The results show that while alloying a-Si:H with germanium has little effect on the valence band tail, the conduction band tail density of states is increased dramatically. Defect distributions both above and below midgap are detected and identified with the dangling bond D+/° and D°/- states. The density of deep defects below midgap increases exponentially with germanium content. Above midgap, a large concentration of defects lying between 0.3 and 0.5 eV below the conduction band edge has a strong effect on transient electron transport.

  4. a-Si:H/SiNW shell/core for SiNW solar cell applications

    PubMed Central

    2013-01-01

    Vertically aligned silicon nanowires have been synthesized by the chemical etching of silicon wafers. The influence of a hydrogenated amorphous silicon (a-Si:H) layer (shell) on top of a silicon nanowire (SiNW) solar cell has been investigated. The optical properties of a-Si:H/SiNWs and SiNWs are examined in terms of optical reflection and absorption properties. In the presence of the a-Si:H shell, 5.2% reflection ratio in the spectral range (250 to 1,000 nm) is achieved with a superior absorption property with an average over 87% of the incident light. In addition, the characteristics of the solar cell have been significantly improved, which exhibits higher open-circuit voltage, short-circuit current, and efficiency by more than 15%, 12%, and 37%, respectively, compared with planar SiNW solar cells. Based on the current–voltage measurements and morphology results, we show that the a-Si:H shell can passivate the defects generated by wet etching processes. PMID:24195734

  5. Parameter variation of the one-diode model of a-Si and a- Si/μc-Si solar cells for modeling light-induced degradation

    NASA Astrophysics Data System (ADS)

    Weicht, J. A.; Hamelmann, F. U.; Behrens, G.

    2014-11-01

    For analyzing the long-term behavior of thin film a-Si/μc-Si photovoltaic modules, it is important to observe the light-induced degradation (LID) in dependence of the temperature for the parameters of the one-diode model for solar cells. According to the IEC 61646 standard, the impact of LID on module parameters of these thin film cells is determined at a constant temperature of 50°C with an irradiation of 1000 W/m2 at open circuit conditions. Previous papers examined the LID of thin film a-Si cells with different temperatures and some others are about a-Si/μc-Si. In these previous papers not all parameters of the one-diode model are examined. We observed the serial resistance (Rs), parallel resistance (Rp), short circuit current (Isc), open circuit voltage (Uoc), the maximum power point (MPP: Umpp, Impp and Pmpp) and the diode factor (n). Since the main reason for the LID of silicon-based thin films is the Staebler Wronski effect in the a-Si part of the cell, the temperature dependence of the healing of defects for all parameters of the one-diode model is also taken into account. We are also measuring modules with different kind of transparent conductive oxides: In a-Si thin film solar cells fluorine-doped tin oxide (FTO) is used and for thin film solar cells of a-Si/μc-Si boron- doped zinc oxide is used. In our work we describe an approach for transferring the parameters of a one-diode model for tandem thin film solar cells into the one-diode model for each part of the solar cell. The measurement of degradation and regeneration at higher temperatures is the necessary base for optimization of the different silicon-based thin films in warm hot climate.

  6. Influence of Deposition Pressure on the Properties of Round Pyramid Textured a-Si:H Solar Cells for Maglev.

    PubMed

    Lee, Jaehyeong; Choi, Wonseok; Lee, Kyuil; Lee, Daedong; Kang, Hyunil

    2016-05-01

    HIT (Heterojunction with Intrinsic Thin-layer) photovoltaic cells is one of the highest efficiencies in the commercial solar cells. The pyramid texturization for reducing surface reflectance of HIT solar cells silicon wafers is widely used. For the low leakage current and high shunt of solar cells, the intrinsic amorphous silicon (a-Si:H) on substrate must be uniformly thick of pyramid structure. However, it is difficult to control the thickness in the traditional pyramid texturing process. Thus, we textured the intrinsic a-Si:H thin films with the round pyramidal structure by using HNO3, HF, and CH3COOH solution. The characteristics of round pyramid a-Si:H solar cells deposited at pressure of 500, 1000, 1500, and 2000 mTorr by PECVD (Plasma Enhanced Chemical Vapor Deposition) was investigated. The lifetime, open circuit voltage, fill factor and efficiency of a-Si:H solar cells were investigated with respect to various deposition pressure.

  7. Evolution of a Native Oxide Layer at the a-Si:H/c-Si Interface and Its Influence on a Silicon Heterojunction Solar Cell.

    PubMed

    Liu, Wenzhu; Meng, Fanying; Zhang, Xiaoyu; Liu, Zhengxin

    2015-12-09

    The interface microstructure of a silicon heterojunction (SHJ) solar cell was investigated. We found an ultrathin native oxide layer (NOL) with a thickness of several angstroms was formed on the crystalline silicon (c-Si) surface in a very short time (∼30 s) after being etched by HF solution. Although the NOL had a loose structure with defects that are detrimental for surface passivation, it acted as a barrier to restrain the epitaxial growth of hydrogenated amorphous silicon (a-Si:H) during the plasma-enhanced chemical vapor deposition (PECVD). The microstructure change of the NOL during the PECVD deposition of a-Si:H layers with different conditions and under different H2 plasma treatments were systemically investigated in detail. When a brief H2 plasma was applied to treat the a-Si:H layer after the PECVD deposition, interstitial oxygen and small-size SiO2 precipitates were transformed to hydrogenated amorphous silicon suboxide alloy (a-SiO(x):H, x ∼ 1.5). In the meantime, the interface defect density was reduced by about 50%, and the parameters of the SHJ solar cell were improved due to the post H2 plasma treatment.

  8. Optimization of intrinsic layer thickness, dopant layer thickness and concentration for a-SiC/a-SiGe multilayer solar cell efficiency performance using Silvaco software

    NASA Astrophysics Data System (ADS)

    Yuan, Wong Wei; Natashah Norizan, Mohd; Salwani Mohamad, Ili; Jamalullail, Nurnaeimah; Hidayah Saad, Nor

    2017-11-01

    Solar cell is expanding as green renewable alternative to conventional fossil fuel electricity generation, but compared to other land-used electrical generators, it is a comparative beginner. Many applications covered by solar cells starting from low power mobile devices, terrestrial, satellites and many more. To date, the highest efficiency solar cell is given by GaAs based multilayer solar cell. However, this material is very expensive in fabrication and material costs compared to silicon which is cheaper due to the abundance of supply. Thus, this research is devoted to develop multilayer solar cell by combining two different layers of P-I-N structures with silicon carbide and silicon germanium. This research focused on optimising the intrinsic layer thickness, p-doped layer thickness and concentration, n-doped layer thickness and concentration in achieving the highest efficiency. As a result, both single layer a-SiC and a-SiGe showed positive efficiency improvement with the record of 27.19% and 9.07% respectively via parametric optimization. The optimized parameters is then applied on both SiC and SiGe P-I-N layers and resulted the convincing efficiency of 33.80%.

  9. Optimization of imprintable nanostructured a-Si solar cells: FDTD study.

    PubMed

    Fisker, Christian; Pedersen, Thomas Garm

    2013-03-11

    We present a finite-difference time-domain (FDTD) study of an amorphous silicon (a-Si) thin film solar cell, with nano scale patterns on the substrate surface. The patterns, based on the geometry of anisotropically etched silicon gratings, are optimized with respect to the period and anti-reflection (AR) coating thickness for maximal absorption in the range of the solar spectrum. The structure is shown to increase the cell efficiency by 10.2% compared to a similar flat solar cell with an optimized AR coating thickness. An increased back reflection can be obtained with a 50 nm zinc oxide layer on the back reflector, which gives an additional efficiency increase, leading to a total of 14.9%. In addition, the patterned cells are shown to be up to 3.8% more efficient than an optimized textured reference cell based on the Asahi U-type glass surface. The effects of variations of the optimized solar cell structure due to the manufacturing process are investigated, and shown to be negligible for variations below ±10%.

  10. Application of Ce3+ single-doped complexes as solar spectral downshifters for enhancing photoelectric conversion efficiencies of a-Si-based solar cells

    NASA Astrophysics Data System (ADS)

    Song, Pei; Jiang, Chun

    2013-05-01

    The effect on photoelectric conversion efficiency of an a-Si-based solar cell by applying a solar spectral downshifter of rare earth ion Ce3+ single-doped complexes including yttrium aluminum garnet Y3Al5O12 single crystals, nanostructured ceramics, microstructured ceramics and B2O3-SiO2-Gd2O3-BaO glass is studied. The photoluminescence excitation spectra in the region 360-460 nm convert effectively into photoluminescence emission spectra in the region 450-550 nm where a-Si-based solar cells exhibit a higher spectral response. When these Ce3+ single-doped complexes are placed on the top of an a-Si-based solar cell as precursors for solar spectral downshifting, theoretical relative photoelectric conversion efficiencies of nc-Si:H and a-Si:H solar cells approach 1.09-1.13 and 1.04-1.07, respectively, by means of AMPS-1D numerical modeling, potentially benefiting an a-Si-based solar cell with a photoelectric efficiency improvement.

  11. Origin of Photovoltage Enhancement via Interfacial Modification with Silver Nanoparticles Embedded in an a-SiC:H p-Type Layer in a-Si:H Solar Cells.

    PubMed

    Li, Tiantian; Zhang, Qixing; Ni, Jian; Huang, Qian; Zhang, Dekun; Li, Baozhang; Wei, Changchun; Yan, Baojie; Zhao, Ying; Zhang, Xiaodan

    2017-03-29

    We used silver nanoparticles (Ag-NPs) embedded in the p-type semiconductor layer of hydrogenated amorphous silicon (a-Si:H) solar cells in the Schottky barrier contact design to modify the interface between aluminum-doped ZnO (ZnO:Al, AZO) and p-type hydrogenated amorphous silicon carbide (p-a-SiC:H) without plasmonic absorption. The high work function of the Ag-NPs provided a good channel for the transport of photogenerated holes. A p-type nanocrystalline SiC:H layer was used to compensate for the real surface defects and voids on the surface of Ag-NPs to reduce recombination at the AZO/p-type layer interface, which then enhanced the photovoltage of single-junction a-Si:H solar cells to values as high as 1.01 V. The Ag-NPs were around 10 nm in diameter and thermally stable in the p-type a-SiC:H film at the solar-cell process temperature. We will also show that a wide range of photovoltages between 1.01 and 2.89 V could be obtained with single-, double-, and triple-junction solar cells based on the single-junction a-Si:H solar cells with tunable high photovoltage. These solar cells are suitable photocathodes for solar water-splitting applications.

  12. Analytical solution for haze values of aluminium-induced texture (AIT) glass superstrates for a-Si:H solar cells.

    PubMed

    Sahraei, Nasim; Forberich, Karen; Venkataraj, Selvaraj; Aberle, Armin G; Peters, Marius

    2014-01-13

    Light scattering at randomly textured interfaces is essential to improve the absorption of thin-film silicon solar cells. Aluminium-induced texture (AIT) glass provides suitable scattering for amorphous silicon (a-Si:H) solar cells. The scattering properties of textured surfaces are usually characterised by two properties: the angularly resolved intensity distribution and the haze. However, we find that the commonly used haze equations cannot accurately describe the experimentally observed spectral dependence of the haze of AIT glass. This is particularly the case for surface morphologies with a large rms roughness and small lateral feature sizes. In this paper we present an improved method for haze calculation, based on the power spectral density (PSD) function of the randomly textured surface. To better reproduce the measured haze characteristics, we suggest two improvements: i) inclusion of the average lateral feature size of the textured surface into the haze calculation, and ii) considering the opening angle of the haze measurement. We show that with these two improvements an accurate prediction of the haze of AIT glass is possible. Furthermore, we use the new equation to define optimum morphology parameters for AIT glass to be used for a-Si:H solar cell applications. The autocorrelation length is identified as the critical parameter. For the investigated a-Si:H solar cells, the optimum autocorrelation length is shown to be 320 nm.

  13. The energy gap in a-Si 1 - xC g: H alloys

    NASA Astrophysics Data System (ADS)

    Valladares, Ariel A.; Valladares, Alexander; Enrique Sansores, L.; Nelis, Mary Ann Me

    1997-02-01

    The electronic structure of amorphous tetrahedral clusters of the type a-Si 1 - xC g: H are studied using the pseudopotential SCF Hartree-Fock approximation. The reduced energy gap isgiven by Egr( x) - 1 + 0.84 x for x ⩽ 0.5, whereas experimentally Egr( x) = 1 + 0.96 x. For x ⩾ 0.5 the dip in the gap value reported experimentally is verified.

  14. Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling tools

    NASA Astrophysics Data System (ADS)

    Rubinelli, Francisco A.; Ramirez, Helena; Ruiz, Carlos M.; Schmidt, Javier A.

    2017-05-01

    Recombination losses of a-Si:H based p-i-n solar cells in the annealed state are analyzed with device computer modeling. Under AM1.5 illumination, the recombination rate in the intrinsic layer is shown to be controlled by a combination of losses through defect and tail states. The influence of the defect concentration on the characteristic parameters of a solar cell is analyzed. The impact on the light current-voltage characteristic curve of adopting very low free carrier mobilities and a high density of states at the band edge is explored under red and AM1.5 illumination. The distribution of trapped charge, electric field, and recombination loses inside the intrinsic layer is examined, and their influence on the solar cell performance is discussed. Solar cells with intrinsic layers deposited with and without hydrogen dilution are examined. It is found that the photocurrent at -2 V is not always a good approximation of the saturated reverse-bias photocurrent in a-Si:H p-i-n solar cells at room temperature. The importance of using realistic electrical parameters in solar cell simulations is emphasized.

  15. Influnce of exposure with Xe radiation on heterojunction solar cell a-SiC/c-Si studied by impedance spectroscopy

    NASA Astrophysics Data System (ADS)

    Perný, M.; Šály, V.; Packa, J.; Mikolášek, M.; Váry, M.; Huran, J.; Hrubčín, L.; Skuratov, V. A.; Arbet, J.

    2017-04-01

    The photovoltaic efficiency of heterostructures a-SiC/c-Si may be the same or even better in comparison with conventional silicon structures when suitable adjustment of technological parameters is realized. The main advantage of heterojunction formed amorphous SiC thin film and crystalline silicon compared to standard crystalline solar cell lies in high build-in voltage and thus a high open-circuit voltage. Solar cells can be exposed to various influences of hard environment. A deterioration of properties of heterostructures (a-SiC/c-Si) due to irradiation is examined in our paper using impedance spectroscopy method. Xe ions induced damage is reflected in changes of proposed AC equivalent circuit elements. AC equivalent circuit was proposed and verified using numerical simulations. Impedance spectra were also measured at different DC bias voltages due to a more detailed understanding correlation between Xe ions induced damage and transport phenomenon in the heterostructure.

  16. Using high haze (> 90%) light-trapping film to enhance the efficiency of a-Si:H solar cells

    NASA Astrophysics Data System (ADS)

    Chu, Wei-Ping; Lin, Jian-Shian; Lin, Tien-Chai; Tsai, Yu-Sheng; Kuo, Chen-Wei; Chung, Ming-Hua; Hsieh, Tsung-Eong; Liu, Lung-Chang; Juang, Fuh-Shyang; Chen, Nien-Po

    2012-07-01

    The high haze light-trapping (LT) film offers enhanced scattering of light and is applied to a-Si:H solar cells. UV glue was spin coated on glass, and then the LT pattern was imprinted. Finally, a UV lamp was used to cure the UV glue on the glass. The LT film effectively increased the Haze ratio of glass and decreased the reflectance of a-Si:H solar cells. Therefore, the photon path length was increased to obtain maximum absorption by the absorber layer. High Haze LT film is able to enhance short circuit current density and efficiency of the device, as partial composite film generates broader scattering light, thereby causing shorter wave length light to be absorbed by the P layer so that the short circuit current density decreases. In case of lab-made a-Si:H thin film solar cells with v-shaped LT films, superior optoelectronic performances have been found (Voc = 0.74 V, Jsc = 15.62 mA/cm2, F.F. = 70%, and η = 8.09%). We observed ~ 35% enhancement of the short-circuit current density and ~ 31% enhancement of the conversion efficiency.

  17. Nondestructive characterization of textured a-Si:H/c-Si heterojunction solar cell structures with nanometer-scale a-Si:H and In2O3:Sn layers by spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Matsuki, Nobuyuki; Fujiwara, Hiroyuki

    2013-07-01

    Nanometer-scale hydrogenated amorphous silicon (a-Si:H) layers formed on crystalline silicon (c-Si) with pyramid-shaped textures have been characterized by spectroscopic ellipsometry (SE) using a tilt angle measurement configuration, in an attempt to establish a nondestructive method for the structural characterization of the a-Si:H/c-Si heterojunction solar cells. By applying an a-Si:H dielectric function model developed recently, the thickness and SiH2 content of the a-Si:H layer have been determined even on the textured substrates. Furthermore, from the SE analysis incorporating the Drude model, the carrier properties of the In2O3:Sn layers in the textured solar-cell structure have been characterized.

  18. Mechanical Properties of ZTO, ITO, and a-Si:H Multilayer Films for Flexible Thin Film Solar Cells

    PubMed Central

    Hengst, Claudia; Menzel, Siegfried B; Rane, Gayatri K; Smirnov, Vladimir; Wilken, Karen; Leszczynska, Barbara; Fischer, Dustin; Prager, Nicole

    2017-01-01

    The behavior of bi- and trilayer coating systems for flexible a-Si:H based solar cells consisting of a barrier, an electrode, and an absorption layer is studied under mechanical load. First, the film morphology, stress, Young’s modulus, and crack onset strain (COS) were analyzed for single film coatings of various thickness on polyethylene terephthalate (PET) substrates. In order to demonstrate the role of the microstructure of a single film on the mechanical behavior of the whole multilayer coating, two sets of InSnOx (indium tin oxide, ITO) conductive coatings were prepared. Whereas a characteristic grain–subgrain structure was observed in ITO-1 films, grain growth was suppressed in ITO-2 films. ITO-1 bilayer coatings showed two-step failure under tensile load with cracks propagating along the ITO-1/a-Si:H-interface, whereas channeling cracks in comparable bi- and trilayers based on amorphous ITO-2 run through all constituent layers. A two-step failure is preferable from an application point of view, as it may lead to only a degradation of the performance instead of the ultimate failure of the device. Hence, the results demonstrate the importance of a fine-tuning of film microstructure not only for excellent electrical properties, but also for a high mechanical performance of flexible devices (e.g., a-Si:H based solar cells) during fabrication in a roll-to-roll process or under service. PMID:28772609

  19. Mechanical Properties of ZTO, ITO, and a-Si:H Multilayer Films for Flexible Thin Film Solar Cells.

    PubMed

    Hengst, Claudia; Menzel, Siegfried B; Rane, Gayatri K; Smirnov, Vladimir; Wilken, Karen; Leszczynska, Barbara; Fischer, Dustin; Prager, Nicole

    2017-03-01

    The behavior of bi- and trilayer coating systems for flexible a-Si:H based solar cells consisting of a barrier, an electrode, and an absorption layer is studied under mechanical load. First, the film morphology, stress, Young's modulus, and crack onset strain (COS) were analyzed for single film coatings of various thickness on polyethylene terephthalate (PET) substrates. In order to demonstrate the role of the microstructure of a single film on the mechanical behavior of the whole multilayer coating, two sets of InSnOx (indium tin oxide, ITO) conductive coatings were prepared. Whereas a characteristic grain-subgrain structure was observed in ITO-1 films, grain growth was suppressed in ITO-2 films. ITO-1 bilayer coatings showed two-step failure under tensile load with cracks propagating along the ITO-1/a-Si:H-interface, whereas channeling cracks in comparable bi- and trilayers based on amorphous ITO-2 run through all constituent layers. A two-step failure is preferable from an application point of view, as it may lead to only a degradation of the performance instead of the ultimate failure of the device. Hence, the results demonstrate the importance of a fine-tuning of film microstructure not only for excellent electrical properties, but also for a high mechanical performance of flexible devices (e.g., a-Si:H based solar cells) during fabrication in a roll-to-roll process or under service.

  20. Nanoimprinted backside reflectors for a-Si:H thin-film solar cells: critical role of absorber front textures.

    PubMed

    Tsao, Yao-Chung; Fisker, Christian; Pedersen, Thomas Garm

    2014-05-05

    The development of optimal backside reflectors (BSRs) is crucial for future low cost and high efficiency silicon (Si) thin-film solar cells. In this work, nanostructured polymer substrates with aluminum coatings intended as BSRs were produced by positive and negative nanoimprint lithography (NIL) techniques, and hydrogenated amorphous silicon (a-Si:H) was deposited hereon as absorbing layers. The relationship between optical properties and geometry of front textures was studied by combining experimental reflectance spectra and theoretical simulations. It was found that a significant height variation on front textures plays a critical role for light-trapping enhancement in solar cell applications. As a part of sample preparation, a transfer NIL process was developed to overcome the problem of low heat deflection temperature of polymer substrates during solar cell fabrication.

  1. Precipitation Sequence of a SiC Particle Reinforced Al-Mg-Si Alloy Composite

    NASA Astrophysics Data System (ADS)

    Shen, Rujuan; Wang, Yihan; Guo, Baisong; Song, Min

    2016-11-01

    In this study, the precipitation sequence of a 5 vol.% SiC particles reinforced Al-1.12 wt.%Mg-0.77 wt.%Si alloy composite fabricated by traditional powder metallurgy method was investigated by transmission electron microscopy and hardness measurements. The results indicated that the addition of SiC reinforcements not only suppresses the initial aging stage but also influences the subsequent precipitates. The precipitation sequence of the composite aged at 175 °C can be described as: Guinier-Preston (G.P.) zone → β″ → β' → B', which was confirmed by high-resolution transmission electron microscopy. This work might provide the guidance for the design and fabrication of hardenable automobile body sheet by Al-based composites with enhanced mechanical properties.

  2. Numerical Optimization of a Bifacial Bi-Glass Thin-Film a-Si:H Solar Cell for Higher Conversion Efficiency

    NASA Astrophysics Data System (ADS)

    Berrian, Djaber; Fathi, Mohamed; Kechouane, Mohamed

    2018-02-01

    Bifacial solar cells that maximize the energy output per a square meter have become a new fashion in the field of photovoltaic cells. However, the application of thin-film material on bifacial solar cells, viz., thin-film amorphous hydrogenated silicon ( a- Si:H), is extremely rare. Therefore, this paper presents the optimization and influence of the band gap, thickness and doping on the performance of a glass/glass thin-film a- Si:H ( n- i- p) bifacial solar cell, using a computer-aided simulation tool, Automat for simulation of hetero-structures (AFORS-HET). It is worth mentioning that the thickness and the band gap of the i-layer are the key parameters in achieving higher efficiency and hence it has to be handled carefully during the fabrication process. Furthermore, an efficient thin-film a- Si:H bifacial solar cell requires thinner and heavily doped n and p emitter layers. On the other hand, the band gap of the p-layer showed a dramatic reduction of the efficiency at 2.3 eV. Moreover, a high bifaciality factor of more than 92% is attained, and top efficiency of 10.9% is revealed under p side illumination. These optimizations demonstrate significant enhancements of the recent experimental work on thin-film a- Si:H bifacial solar cells and would also be useful for future experimental investigations on an efficient a- Si:H thin-film bifacial solar cell.

  3. Foaming of aluminium-silicon alloy using concentrated solar energy

    SciTech Connect

    Cambronero, L.E.G.; Ruiz-Roman, J.M.; Canadas, I.

    2010-06-15

    Solar energy is used for the work reported here as a nonconventional heating system to produce aluminium foam from Al-Si alloy precursors produced by powder metallurgy. A commercial precursor in cylindrical bars enclosed in a stainless-steel mould was heated under concentrated solar radiation in a solar furnace with varied heating conditions (heating rate, time, and temperature). Concentrated solar energy close to 300 W/cm{sup 2} on the mould is high enough to achieve complete foaming after heating for only 200 s. Under these conditions, the density and pore distribution in the foam change depending on the solar heating parameters and mouldmore » design. (author)« less

  4. Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)

    NASA Astrophysics Data System (ADS)

    Tanaka, Makoto; Taguchi, Mikio; Matsuyama, Takao; Sawada, Toru; Tsuda, Shinya; Nakano, Shoichi; Hanafusa, Hiroshi; Kuwano, Yukinori

    1992-11-01

    A new type of a-Si/c-Si heterojunction solar cell, called the HIT (Heterojunction with Intrinsic Thin-layer) solar cell, has been developed based on ACJ (Artificially Constructed Junction) technology. A conversion efficiency of more than 18% has been achieved, which is the highest ever value for solar cells in which the junction was fabricated at a low temperature (<200°C).

  5. In vitro evaluation of diamond-like carbon coatings with a Si/SiC x interlayer on surgical NiTi alloy

    NASA Astrophysics Data System (ADS)

    Liu, C. L.; Chu, Paul K.; Yang, D. Z.

    2007-04-01

    Diamond-like carbon (DLC) coatings were produced with a Si/SiCx interlayer by a hybrid plasma immersion ion implantation and deposition process to improve the adhesion between the carbon layer and surgical NiTi alloy substrate. The structure, mechanical properties, corrosion resistance and biocompatibility of the coatings were evaluated in vitro by Raman spectroscopy, pin-on-disk tests, potentiodynamic polarization tests and simulated fluid immersion tests. The DLC coatings with a Si/SiCx interlayer of a suitable thickness have better adhesion, lower friction coefficients and enhanced corrosion resistance. In the simulated body fluid tests, the coatings exhibit effective corrosion protection and good biocompatibility as indicated by PC12 cell cultures. DLC films fabricated on a Si/SiCx interlayer have high potential as protective coatings for biomedical NiTi materials.

  6. Solar Water Splitting Utilizing a SiC Photocathode, a BiVO4 Photoanode, and a Perovskite Solar Cell.

    PubMed

    Iwase, Akihide; Kudo, Akihiko; Numata, Youhei; Ikegami, Masashi; Miyasaka, Tsutomu; Ichikawa, Naoto; Kato, Masashi; Hashimoto, Hideki; Inoue, Haruo; Ishitani, Osamu; Tamiaki, Hitoshi

    2017-11-23

    We have successfully demonstrated solar water splitting using a newly fabricated photoelectrochemical system with a Pt-loaded SiC photocathode, a CoO x -loaded BiVO 4 photoanode, and a perovskite solar cell. Detection of the evolved H 2 and O 2 with a 100 % Faradaic efficiency indicates that the observed photocurrent was used for water splitting. The solar-to-hydrogen (STH) efficiency was 0.55 % under no additional bias conditions. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Hybrid solar cell based on a-Si/polymer flat heterojunction on flexible substrates

    NASA Astrophysics Data System (ADS)

    Olivares Vargas, A. J.; Mansurova, S.; Cosme, I.; Kosarev, A.; Ospina Ocampo, C. A.; Martinez Mateo, H. E.

    2017-08-01

    In this work, we present the results of investigation of thin film hybrid organic-inorganic photovoltaic structures based on flat heterojunction hydrogenated silicon (a-Si:H) and poly(3,4 ethylene dioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) fabricated on polyethylene naphthalate (PEN). Different thicknesses of transparent AL doped Zn:O (AZO) electrodes have been tested on PEN substrate and studied by atomic force microscopy (AFM). The AZO films on PEN substrate were statistically processed to obtain surface morphological characteristics, such as root mean square roughness RQ, skewness SK and kurtosis KU. Performance characteristics of fabricated photovoltaic structures have been measured and analyzed for different thicknesses of the transparent electrodes under standard illumination (AM 1.5 I0= 100mW/cm2). Structures on flexible substrates show reproducible performance characteristic as their glass substrate counterpart with values of JSC= 6 mA/cm2, VOC= 0.535 V, FF= 43 % and PCE= 1.41%.

  8. Shape Control of Solar Collectors Using Shape Memory Alloy Actuators

    NASA Technical Reports Server (NTRS)

    Lobitz, D. W.; Grossman, J. W.; Allen, J. J.; Rice, T. M.; Liang, C.; Davidson, F. M.

    1996-01-01

    Solar collectors that are focused on a central receiver are designed with a mechanism for defocusing the collector or disabling it by turning it out of the path of the sun's rays. This is required to avoid damaging the receiver during periods of inoperability. In either of these two cases a fail-safe operation is very desirable where during power outages the collector passively goes to its defocused or deactivated state. This paper is principally concerned with focusing and defocusing the collector in a fail-safe manner using shape memory alloy actuators. Shape memory alloys are well suited to this application in that once calibrated the actuators can be operated in an on/off mode using a minimal amount of electric power. Also, in contrast to other smart materials that were investigated for this application, shape memory alloys are capable of providing enough stroke at the appropriate force levels to focus the collector. Design and analysis details presented, along with comparisons to test data taken from an actual prototype, demonstrate that the collector can be repeatedly focused and defocused within accuracies required by typical solar energy systems. In this paper the design, analysis and testing of a solar collector which is deformed into its desired shape by shape memory alloy actuators is presented. Computations indicate collector shapes much closer to spherical and with smaller focal lengths can be achieved by moving the actuators inward to a radius of approximately 6 inches. This would require actuators with considerably more stroke and some alternate SMA actuators are currently under consideration. Whatever SMA actuator is finally chosen for this application, repeatability and fatigue tests will be required to investigate the long term performance of the actuator.

  9. A Si IV/O IV Electron Density Diagnostic for the Analysis of IRIS Solar Spectra

    NASA Astrophysics Data System (ADS)

    Young, P. R.; Keenan, F. P.; Milligan, R. O.; Peter, H.

    2018-04-01

    Solar spectra of ultraviolet bursts and flare ribbons from the Interface Region Imaging Spectrograph (IRIS) have suggested high electron densities of > {10}12 cm‑3 at transition region temperatures of 0.1 MK, based on large intensity ratios of Si IV λ1402.77 to O IV λ1401.16. In this work, a rare observation of the weak O IV λ1343.51 line is reported from an X-class flare that peaked at 21:41 UT on 2014 October 24. This line is used to develop a theoretical prediction of the Si IV λ1402.77 to O IV λ1401.16 ratio as a function of density that is recommended to be used in the high-density regime. The method makes use of new pressure-dependent ionization fractions that take account of the suppression of dielectronic recombination at high densities. It is applied to two sequences of flare kernel observations from the October 24 flare. The first shows densities that vary between 3× {10}12 and 3× {10}13 cm‑3 over a seven-minute period, while the second location shows stable density values of around 2× {10}12 cm‑3 over a three-minute period.

  10. The role of high work-function metallic nanodots on the performance of a-Si:H solar cells: offering ohmic contact to light trapping.

    PubMed

    Kim, Jeehwan; Abou-Kandil, Ahmed; Fogel, Keith; Hovel, Harold; Sadana, Devendra K

    2010-12-28

    Addition of carbon into p-type "window" layers in hydrogenated amorphous silicon (a-Si:H) solar cells enhances short circuit currents and open circuit voltages by a great deal. However, a-Si:H solar cells with high carbon-doped "window" layers exhibit poor fill factors due to a Schottky barrier-like impedance at the interface between a-SiC:H windows and transparent conducting oxides (TCO), although they show maximized short circuit currents and open circuit voltages. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiC:H. Applying ultrathin high-work-function metals at the interface between the two materials results in an effective lowering of the work function mismatch and a consequent ohmic behavior. If the metal layer is sufficiently thin, then it forms nanodots rather than a continuous layer which provides light-scattering effect. We demonstrate 31% efficiency enhancement by using high-work-function materials for engineering the work function at the key interfaces to raise fill factors as well as photocurrents. The use of metallic interface layers in this work is a clear contrast to previous work where attempts were made to enhance the photocurrent using plasmonic metal nanodots on the solar cell surface.

  11. Simulation of light-induced degradation of μc-Si in a-Si/μc-Si tandem solar cells by the diode equivalent circuit

    NASA Astrophysics Data System (ADS)

    Weicht, J. A.; Hamelmann, F. U.; Behrens, G.

    2016-02-01

    Silicon-based thin film tandem solar cells consist of one amorphous (a-Si) and one microcrystalline (μc-Si) silicon solar cell. The Staebler - Wronski effect describes the light- induced degradation and temperature-dependent healing of defects of silicon-based solar thin film cells. The solar cell degradation depends strongly on operation temperature. Until now, only the light-induced degradation (LID) of the amorphous layer was examined in a-Si/μc-Si solar cells. The LID is also observed in pc-Si single function solar cells. In our work we show the influence of the light-induced degradation of the μc-Si layer on the diode equivalent circuit. The current-voltage-curves (I-V-curves) for the initial state of a-Si/pc-Si modules are measured. Afterwards the cells are degraded under controlled conditions at constant temperature and constant irradiation. At fixed times the modules are measured at standard test conditions (STC) (AM1.5, 25°C cell temperature, 1000 W/m2) for controlling the status of LID. After the degradation the modules are annealed at dark conditions for several hours at 120°C. After the annealing the dangling bonds in the amorphous layer are healed, while the degradation of the pc-Si is still present, because the healing of defects in pc-Si solar cells needs longer time or higher temperatures. The solar cells are measured again at STC. With this laboratory measured I-V-curves we are able to separate the values of the diode model: series Rs and parallel resistance Rp, saturation current Is and diode factor n.

  12. Opto-electronic properties of P-doped nc-Si-QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration

    NASA Astrophysics Data System (ADS)

    Kar, Debjit; Das, Debajyoti

    2016-07-01

    With the advent of nc-Si solar cells having improved stability, the efficient growth of nc-Si i-layer of the top cell of an efficient all-Si solar cell in the superstrate configuration prefers nc-Si n-layer as its substrate. Accordingly, a wide band gap and high conducting nc-Si alloy material is a basic requirement at the n-layer. Present investigation deals with the development of phosphorous doped n-type nanocrystalline silicon quantum dots embedded in hydrogenated amorphous silicon carbide (nc-Si-QD/a-SiC:H) hetero-structure films, wherein the optical band gap can be widened by the presence of Si-C bonds in the amorphous matrix and the embedded high density tiny nc-Si-QDs could provide high electrical conductivity, particularly in P-doped condition. The nc-Si-QDs simultaneously facilitate further widening of the optical band gap by virtue of the associated quantum confinement effect. A complete investigation has been made on the electrical transport phenomena involving charge transfer by tunneling and thermionic emission prevailing in n-type nc-Si-QD/a-SiC:H thin films. Their correlation with different phases of the specific heterostructure has been carried out for detailed understanding of the material, in order to improve its device applicability. The n-type nc-Si-QD/a-SiC:H films exhibit a thermally activated electrical transport above room temperature and multi-phonon hopping (MPH) below room temperature, involving defects in the amorphous phase and the grain-boundary region. The n-type nc-Si-QD/a-SiC:H films grown at ˜300 °C, demonstrating wide optical gap ˜1.86-1.96 eV and corresponding high electrical conductivity ˜4.5 × 10-1-1.4 × 10-2 S cm-1, deserve to be an effective foundation layer for the top nc-Si sub-cell of all-Si solar cells in n-i-p structure with superstrate configuration.

  13. Opto-electronic properties of P-doped nc-Si–QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration

    SciTech Connect

    Kar, Debjit; Das, Debajyoti, E-mail: erdd@iacs.res.in

    2016-07-14

    With the advent of nc-Si solar cells having improved stability, the efficient growth of nc-Si i-layer of the top cell of an efficient all-Si solar cell in the superstrate configuration prefers nc-Si n-layer as its substrate. Accordingly, a wide band gap and high conducting nc-Si alloy material is a basic requirement at the n-layer. Present investigation deals with the development of phosphorous doped n-type nanocrystalline silicon quantum dots embedded in hydrogenated amorphous silicon carbide (nc-Si–QD/a-SiC:H) hetero-structure films, wherein the optical band gap can be widened by the presence of Si–C bonds in the amorphous matrix and the embedded high densitymore » tiny nc-Si–QDs could provide high electrical conductivity, particularly in P-doped condition. The nc-Si–QDs simultaneously facilitate further widening of the optical band gap by virtue of the associated quantum confinement effect. A complete investigation has been made on the electrical transport phenomena involving charge transfer by tunneling and thermionic emission prevailing in n-type nc-Si–QD/a-SiC:H thin films. Their correlation with different phases of the specific heterostructure has been carried out for detailed understanding of the material, in order to improve its device applicability. The n-type nc-Si–QD/a-SiC:H films exhibit a thermally activated electrical transport above room temperature and multi-phonon hopping (MPH) below room temperature, involving defects in the amorphous phase and the grain-boundary region. The n-type nc-Si–QD/a-SiC:H films grown at ∼300 °C, demonstrating wide optical gap ∼1.86–1.96 eV and corresponding high electrical conductivity ∼4.5 × 10{sup −1}–1.4 × 10{sup −2} S cm{sup −1}, deserve to be an effective foundation layer for the top nc-Si sub-cell of all-Si solar cells in n-i-p structure with superstrate configuration.« less

  14. Distributions of Thermal-Annealing Activation Energies for Light-Induced Spins in Fast and Slow Processes in a-Si1-xNx:H Alloys

    NASA Astrophysics Data System (ADS)

    Zhang, Jinyan; Kumeda, Minoru; Shimizu, Tatsuo

    1995-10-01

    We report on the thermal annealing of light-induced neutral dangling bonds (DB's) created by strong band-gap illumination at 77 K and room temperature (RT) in amorphous silicon-nitrogen alloys ( a-Si1- xN x:H). We find that the light-induced DB's are annealed out with distinct distributions of annealing activation energies (E A's). The distribution for the light-induced DB's created in the fast process (FDB's) and the one for those created in the slow process (SDB's) are separated unambiguously: E A for FDB's is in the range from 0 to 0.7 eV, in which two separated peaks (centered at about 0.09 and 0.4 eV) are embodied, and E A for SDB's is in the range from 0.6 to 1.4 eV, centered at about 1 eV, in a-Si0.5N0.5:H. Moreover, the results demonstrate that the distributions of E A for FDB's and SDB's depend on illumination temperature and illumination time.

  15. Enhancement of a-Si:H solar cell efficiency by Y2O3 : Yb3+, Er3+ near infrared spectral upconverter

    NASA Astrophysics Data System (ADS)

    Markose, Kurias K.; Anjana, R.; Subha, P. P.; Antony, Aldrin; Jayaraj, M. K.

    2016-09-01

    The optical properties of Yb3+/Er3+ doped Y2O3 upconversion phosphor and the enhancement of efficiency of a-Si:H solar cell on incorporation of upconverter are investigated. The Y2O3 host material has high corrosion resistance, thermal stability, chemical stability, low toxicity and relatively low phonon energy (≈ 500 cm-1). Y2O3:Yb3+ (x %): Er3+ (y %) upconversion nanophosphors with different dopant concentrations were synthesized via simple hydrothermal method followed by a heat treatment at 1200°C for 12 hrs. Highly crystalline, quasi-spherical, body centered cubic Y2O3 structure was obtained. The structure, phase and morphology of the nanocrystals were determined using x-ray diffraction and SEM. Following pumping at 980 nm two dominant emission bands were observed at about 550 nm(green) and 660 nm(red), corresponding to 2H11/2, 4S3/2 -> 4I15/2 and 4F9/2 -> 4I15/2 transitions respectively. The dependence of emission intensity on pump power shows that the mechanism involved is two photon absorption. The upconversion phosphor along with a binder is coupled behind the a-Si:H solar cell which absorbs transmitted sub-band-gap photons and emits back the upconverted visible light which can be absorbed by the solar cell. Under suitable intensity of illumination the solar cell short circuit current is found to be increased on adding the upconversion layer.

  16. Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire array: focus on the electrical transport in between the nanowires.

    PubMed

    Levtchenko, Alexandra; Le Gall, Sylvain; Lachaume, Raphaël; Michallon, Jérôme; Collin, Stéphane; Alvarez, José; Djebbour, Zakaria; Kleider, Jean-Paul

    2018-06-22

    By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell's performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (V bi ) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell's performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the V bi at both interfaces due to strong electrostatic screening effect. Depositing such a buffer layer playing the role of an electrostatic screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.

  17. Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire array: focus on the electrical transport in between the nanowires

    NASA Astrophysics Data System (ADS)

    Levtchenko, Alexandra; Le Gall, Sylvain; Lachaume, Raphaël; Michallon, Jérôme; Collin, Stéphane; Alvarez, José; Djebbour, Zakaria; Kleider, Jean-Paul

    2018-06-01

    By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell’s performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (V bi) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell’s performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the V bi at both interfaces due to strong electrostatic screening effect. Depositing such a buffer layer playing the role of an electrostatic screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.

  18. Evidence of significant down-conversion in a Si-based solar cell using CuInS2/ZnS core shell quantum dots

    NASA Astrophysics Data System (ADS)

    Gardelis, Spiros; Nassiopoulou, Androula G.

    2014-05-01

    We report on the increase of up to 37.5% in conversion efficiency of a Si-based solar cell after deposition of light-emitting Cd-free, CuInS2/ZnS core shell quantum dots on the active area of the cell due to the combined effect of down-conversion and the anti- reflecting property of the dots. We clearly distinguished the effect of down-conversion from anti-reflection and estimated an enhancement of up to 10.5% in the conversion efficiency due to down-conversion.

  19. High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Final Technical Report, 4 March 1998--15 October 2001

    SciTech Connect

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2003-10-01

    This is the final report covering about 42 months of this subcontract for research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Phases I and II have been extensively covered in two Annual Reports. For this Final Report, highlights of the first two Phases will be provided and then detail will be given on the last year and a half of Phase III. The effort on CdTe-based materials is led by Prof. Compaan and emphasizes the use of sputter deposition of the semiconductor layers in the fabrication of CdS/CdTe cells. The effort on high-efficiency a-Simore » materials is led by Prof. Deng and emphasizes plasma-enhanced chemical vapor deposition for cell fabrication with major efforts on triple-junction devices.« less

  20. Impedance spectroscopy of heterojunction solar cell a-SiC/c-Si with ITO antireflection film investigated at different temperatures

    NASA Astrophysics Data System (ADS)

    Šály, V.; Perný, M.; Janíček, F.; Huran, J.; Mikolášek, M.; Packa, J.

    2017-04-01

    Progressive smart photovoltaic technologies including heterostructures a-SiC/c-Si with ITO antireflection film are one of the prospective replacements of conventional photovoltaic silicon technology. Our paper is focused on the investigation of heterostructures a-SiC/c-Si provided with a layer of ITO (indium oxide/tin oxide 90/10 wt.%) which acts as a passivating and antireflection coating. Prepared photovoltaic cell structure was investigated at various temperatures and the influence of temperature on its operation was searched. The investigation of the dynamic properties of heterojunction PV cells was carried out using impedance spectroscopy. The equivalent AC circuit which approximates the measured impedance data was proposed. Assessment of the influence of the temperature on the operation of prepared heterostructure was carried out by analysis of the temperature dependence of AC equivalent circuit elements.

  1. Fabrication and testing of mis solar cells on a-Si:F:H. Final report, September 15, 1979-September 15, 1980

    SciTech Connect

    Han, M. K.; Anderson, W. A.

    1980-11-03

    Fabrication techniques and improved a-Si:H film processing have been achieved to produce a short circuit current density of 7.5 mA/cm/sup 2/ and open circuit voltage of 740 mV on large area (2cm/sup 2/) a-Si cells by the deposition of an inexpensive semitransparent metal (Cr) as a top electrode on a N-I-P structure. This corresponds to a 2% efficiency using AMl illumination. A V/sub oc/ of 830 mV and fill factor of 0.54 have also been separately obtained. A relatively simple and inexpensive deposition technique using a one pumpdown vacuum system, Al grid and thin metal film structure have been appliedmore » to reduce the cost of a-Si:H cell fabrication. A SEM study of a-Si film quality shows the substrate texture to greatly influence the film morphology. This in turn serves to influence the uniformity of photovoltaic response on completed solar cells. The studies of optical transmittance of various thin metal films promote the utilization of Cr and Cu as a top electrode. Dark and illuminated I-V characteristics show that current conduction mechanisms and recombination pheonomena are not the same under dark and illuminated conditions. Furthermore, spectral response analysis and reverse illuminated saturation current under different illumination levels show photoconductivity and collection efficiency to be a function of illumination level. Significant differences in spectral response are observed when comparing P-I-N, N-I-P and I-N structures. A Schottky barrier lowering effect is proposed to explain some spectral response data. The importance of the top junction region to carrier collection is also discussed.« less

  2. Spectroscopic Ellipsometry Studies of Thin Film a-Si:H/nc-Si:H Micromorph Solar Cell Fabrication in the p-i-n Superstrate Configuration

    NASA Astrophysics Data System (ADS)

    Huang, Zhiquan

    Spectroscopic ellipsometry (SE) is a non-invasive optical probe that is capable of accurately and precisely measuring the structure of thin films, such as their thicknesses and void volume fractions, and in addition their optical properties, typically defined by the index of refraction and extinction coefficient spectra. Because multichannel detection systems integrated into SE instrumentation have been available for some time now, the data acquisition time possible for complete SE spectra has been reduced significantly. As a result, real time spectroscopic ellipsometry (RTSE) has become feasible for monitoring thin film nucleation and growth during the deposition of thin films as well as during their removal in processes of thin film etching. Also because of the reduced acquisition time, mapping SE is possible by mounting an SE instrument with a multichannel detector onto a mechanical translation stage. Such an SE system is capable of mapping the thin film structure and its optical properties over the substrate area, and thereby evaluating the spatial uniformity of the component layers. In thin film photovoltaics, such structural and optical property measurements mapped over the substrate area can be applied to guide device optimization by correlating small area device performance with the associated local properties. In this thesis, a detailed ex-situ SE study of hydrogenated amorphous silicon (a-Si:H) thin films and solar cells prepared by plasma enhanced chemical vapor deposition (PECVD) has been presented. An SE analysis procedure with step-by-step error minimization has been applied to obtain accurate measures of the structural and optical properties of the component layers of the solar cells. Growth evolution diagrams were developed as functions of the deposition parameters in PECVD for both p-type and n-type layers to characterize the regimes of accumulated thickness over which a-Si:H, hydrogenated nanocrystalline silicon (nc-Si:H) and mixed phase (a

  3. Study of the Staebler-Wronski degradation effect in a-Si:H based p-i-n solar cell

    NASA Technical Reports Server (NTRS)

    Naseem, H. A.; Brown, W. D.; Ang, S. S.

    1993-01-01

    Conversion of solar energy into electricity using environmentally safe and clean photovoltaic methods to supplement the ever increasing energy needs has been a cherished goal of many scientists and engineers around the world. Photovoltaic solar cells on the other hand, have been the power source for satellites ever since their introduction in the early sixties. For widespread terrestrial applications, however, the cost of photovoltaic systems must be reduced considerably. Much progress has been made in the recent past towards developing economically viable terrestrial systems, and the future looks highly promising. Thin film solar cells offer cost reductions mainly from their low processing cost, low material cost, and choice of low cost substrates. These are also very attractive for space applications because of their high power densities (power produced per kilogram of solar cell pay load) and high radiation resistance. Amorphous silicon based solar cells are amongst the top candidates for economically viable terrestrial and space based power generation. Despite very low federal funding during the eighties, amorphous silicon solar cell efficiencies have continually been improved - from a low 3 percent to over 13 percent now. Further improvements have been made by the use of multi-junction tandem solar cells. Efficiencies close to 15 percent have been achieved in several labs. In order to be competitive with fossil fuel generated electricity, it is believed that module efficiency of 15 percent or cell efficiency of 20 percent is required. Thus, further improvements in cell performance is imperative. One major problem that was discovered almost 15 years ago in amorphous silicon devices is the well known Staebler-Wronski Effect. Efficiency of amorphous silicon solar cells was found to degrade upon exposure to sunlight. Until now their is no consensus among the scientists on the mechanism for this degradation. Efficiency may degrade anywhere from 10 percent to almost

  4. CDTE alloys and their application for increasing solar cell performance

    NASA Astrophysics Data System (ADS)

    Swanson, Drew E.

    -ray photoelectron spectroscopy, and energy-dispersive x-ray spectroscopy were performed to characterize these cells. Voltage improvements on the order of 50 mV are presented at a thin (1 ?m) CdTe absorber condition. However an overall reduction in fill factor (FF) is seen, with a strong reduction in FF as the magnesium incorporation is increased. Detailed material characterization shows the formation of oxides at the back of CdMgTe during the passivation process. A CdTe capping layer is added to reduce oxidation and help maintain the uniformity of the CdMgTe layer. A tellurium back contact is also added in place of a carbon paint back contact, reducing the impact of the valance band offset (VBO) from the CMT. With the addition of the capping layer and tellurium back contact a consistent 50 mV increase is seen with improved FF. However this voltage increase is well below modeled Voc increases of 150 mV. CMT double hetero-structures are manufactured and analyzed to estimate the interface recombination at the CdTe/CMT interface. The CdTe/CMT interface is approximated at 2*105 cm s-1 and modeling is referenced predicting significant reduction in performance based on this interface quality. To improve interface quality by removing the need for a vacuum break, the deposition hardware is incorporated into the primary deposition system. Second, CdTe has a somewhat higher band gap than optimal for single-junction terrestrial solar-cell power generation. A reduction in the band gap could therefore result in an overall improvement in performance. To reduce the band gap, selenium was alloyed with CdTe using a novel co-sublimation extension of the close-space-sublimation process. Co-sublimated layers of CdSeTe with various selenium concentrations were characterized for optical absorption and atomic concentrations, as well as to track changes in their morphology and crystallinity. The lower band-gap CdSeTe films were then incorporated into the front of CdTe cells. This two-layer band

  5. Growth of KOH etched AZO nanorods and investigation of its back scattering effect in thin film a-Si solar cell

    NASA Astrophysics Data System (ADS)

    Sharma, Jayasree Roy; Mitra, Suchismita; Ghosh, Hemanta; Das, Gourab; Bose, Sukanta; Mandal, Sourav; Mukhopadhyay, Sumita; Saha, Hiranmay; Barua, A. K.

    2018-02-01

    In order to increase the stabilized efficiencies of thin film silicon (TFS) solar cells it is necessary to use better light management techniques. Texturization by etching of sputtered aluminum doped zinc oxide (Al:ZnO or AZO) films has opened up a variety of promises to optimize light trapping schemes. RF sputtered AZO film has been etched by potassium hydroxide (KOH). A systematic study of etching conditions such as etchant concentration, etching time, temperature management etc. have been performed in search of improved electrical and optical performances of the films. The change in etching conditions has exhibited a noticeable effect on the structure of AZO films for which the light trapping effect differs. After optimizing the etching conditions, nanorods have been found on the substrate. Hence, nanorods have been developed only by chemical etching, rather than the conventional development method (hydrothermal method, sol-gel method, electrolysis method etc.). The optimized etched substrate has 82% transmittance, moderate haze in the visible range and sheet resistance ∼13 (Ω/□). The developed nanorods (optimized etched substrate) provide better light trapping within the cell as the optical path length has been increased by using the nanorods. This provides an effect on carrier collection as well as the efficiency in a-Si solar cells. Finite difference time domain (FDTD) simulations have been performed to observe the light trapping by AZO nanorods formed on sputtered AZO films. For a p-i-n solar cell developed on AZO nanorods coated with sputtered AZO films, it has been found through simulations that, the incident light is back scattered into the absorbing layer, leading to an increase in photogenerated current and hence higher efficiency. It has been found that, the light that passes through the nanorods is not getting absorbed and maximum amount of light is back scattered towards the solar cell.

  6. Criteria for improved open-circuit voltage in a-Si :H(N)/c-Si(P) front heterojunction with intrinsic thin layer solar cells

    NASA Astrophysics Data System (ADS)

    Nath, Madhumita; Chatterjee, P.; Damon-Lacoste, J.; Roca i Cabarrocas, P.

    2008-02-01

    Hydrog enated amorphous/crystalline silicon "heterojunction with intrinsic thin layer (HIT)" solar cells have gained popularity after it was demonstrated by Sanyo that they can achieve stable conversion efficiencies, as high as crystalline silicon (c-Si) cells, but where the cost may be reduced with the help of amorphous silicon (a-Si:H) low temperature deposition technology. In this article, we study N-a-Si :H/P-c-Si front HIT structures, where light enters through the N-a-Si :H layer. The aim is to examine ways of improving the open-circuit voltage, using computer modeling in conjunction with experiments. We also assess under which conditions such improvements in Voc actually occur. Modeling indicates that for a density of states Nss⩾1013cm-2 on the surface of the P-c-Si wafer facing the emitter layer, Voc is entirely limited by this parameter and is lower than 0.5V. We also learn that it is possible to increase the Voc to ˜0.73V by reducing this defect density to ˜1010cm-2, by reducing the surface recombination speed of the electrons at the back P-c-Si/aluminum contact (SnL), and by improving the lifetime of the carriers (τ ) in the P-c-Si wafer to ˜5ms. Modeling further indicates that when τ ⩽0.1ms, the sensitivity of Voc to SnL vanishes, as very few back-diffusing electrons can reach the back contact. Improvements in Voc by decreasing both the defect density on the surface of the P-c-Si wafer facing the emitter layer and SnL have been achieved in practice by (a) improved passivation thanks to a thin intrinsic polymorphous silicon layer deposited on the c-Si wafer (instead of a-Si :H) and (b) using localized aluminum and back surface field layers to attain a lower SnL. Experimentally, a Voc of 0.675V has already been attained. Simulations indicate that the lifetime of carriers inside the P-c-Si wafer of these cells is ˜366μs and needs to be improved to achieve a higher Voc.

  7. Light trapping in a-Si/c-Si heterojunction solar cells by embedded ITO nanoparticles at rear surface

    NASA Astrophysics Data System (ADS)

    Dhar, Sukanta; Mandal, Sourav; Mitra, Suchismita; Ghosh, Hemanta; Mukherjee, Sampad; Banerjee, Chandan; Saha, Hiranmoy; Barua, A. K.

    2017-12-01

    The advantages of the amorphous silicon (a-Si)/crystalline silicon (c-Si) hetero junction technology are low temperature (<200 °C) processing and fewer process steps to fabricate the device. In this work, we used indium tin oxide (ITO) nanoparticles embedded in amorphous silicon material at the rear side of the crystalline wafer. The nanoparticles were embedded in silicon to have higher scattering efficiency, as has been established by simulation studies. It has been shown that significant photocurrent enhancements (32.8 mA cm-2 to 35.1 mA cm-2) are achieved because of high scattering and coupling efficiency of the embedded nanoparticles into the silicon device, leading to an increase in efficiency from 13.74% to 15.22%. In addition, we have observed a small increase in open circuit voltage. This may be due to the surface passivation during the ITO nanoparticle formation with hydrogen plasma treatment. We also support our experimental results by simulation, with the help of a commercial finite-difference time-domain (FDTD) software solution.

  8. Progress in a-SiOx:H thin film solar cells with patterned MgF2 dielectric for top cell of multi-junction system

    NASA Astrophysics Data System (ADS)

    Kang, Dong-Won; Sichanugrist, Porponth; Konagai, Makoto

    2016-07-01

    We successfully designed and experimentally demonstrated an application of patterned MgF2 dielectric material at rear Al-doped ZnO (AZO)/Ag interface in thin film amorphous silicon oxide ( a-SiOx:H) solar cells. When it was realized in practical device process, MgF2 coverage with patterned morphology was employed to allow for current flow between the AZO and Ag against highly resistive MgF2 material. On the basis of the suggested structure, we found an improvement in quantum efficiency of the solar cells with the patterned MgF2. In addition, an enhancement of open circuit voltage ( V oc ) and fill factor ( FF) was observed. A remarkable increase in shunt resistance of the cells with the MgF2 would possibly indicate that the highly resistive MgF2 layer can partly suppress physical shunting across top and bottom electrodes caused by very thin absorber thickness of only 100 nm. The approach showed that our best-performing device revealed an essential improvement in conversion efficiency from 7.83 to 8.01% with achieving markedly high V oc (1.013 V) and FF (0.729). [Figure not available: see fulltext.

  9. Thermal storage/discharge performances of Cu-Si alloy for solar thermochemical process

    NASA Astrophysics Data System (ADS)

    Gokon, Nobuyuki; Yamaguchi, Tomoya; Cho, Hyun-seok; Bellan, Selvan; Hatamachi, Tsuyoshi; Kodama, Tatsuya

    2017-06-01

    The present authors (Niigata University, Japan) have developed a tubular reactor system using novel "double-walled" reactor/receiver tubes with carbonate molten-salt thermal storage as a phase change material (PCM) for solar reforming of natural gas and with Al-Si alloy thermal storage as a PCM for solar air receiver to produce high-temperature air. For both of the cases, the high heat capacity and large latent heat (heat of solidification) of the PCM phase circumvents the rapid temperature change of the reactor/receiver tubes at high temperatures under variable and uncontinuous characteristics of solar radiation. In this study, we examined cyclic properties of thermal storage/discharge for Cu-Si alloy in air stream in order to evaluate a potentiality of Cu-Si alloy as a PCM thermal storage material. Temperature-increasing performances of Cu-Si alloy are measured during thermal storage (or heat-charge) mode and during cooling (or heat-discharge) mode. A oxidation state of the Cu-Si alloy after the cyclic reaction was evaluated by using electron probe micro analyzer (EPMA).

  10. Large-Grain Tin-Rich Perovskite Films for Efficient Solar Cells via Metal Alloying Technique.

    PubMed

    Tavakoli, Mohammad Mahdi; Zakeeruddin, Shaik Mohammed; Grätzel, Michael; Fan, Zhiyong

    2018-03-01

    Fast research progress on lead halide perovskite solar cells has been achieved in the past a few years. However, the presence of lead (Pb) in perovskite composition as a toxic element still remains a major issue for large-scale deployment. In this work, a novel and facile technique is presented to fabricate tin (Sn)-rich perovskite film using metal precursors and an alloying technique. Herein, the perovskite films are formed as a result of the reaction between Sn/Pb binary alloy metal precursors and methylammonium iodide (MAI) vapor in a chemical vapor deposition process carried out at 185 °C. It is found that in this approach the Pb/Sn precursors are first converted to (Pb/Sn)I 2 and further reaction with MAI vapor leads to the formation of perovskite films. By using Pb-Sn eutectic alloy, perovskite films with large grain sizes up to 5 µm can be grown directly from liquid phase metal. Consequently, using an alloying technique and this unique growth mechanism, a less-toxic and efficient perovskite solar cell with a power conversion efficiency (PCE) of 14.04% is demonstrated, while pure Sn and Pb perovskite solar cells prepared in this manner yield PCEs of 4.62% and 14.21%, respectively. It is found that this alloying technique can open up a new direction to further explore different alloy systems (binary or ternary alloys) with even lower melting point. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Results of some initial space qualification testing on triple junction a-Si and CuInSe2 thin film solar cells

    NASA Technical Reports Server (NTRS)

    Mueller, Robert L.; Anspaugh, Bruce E.

    1993-01-01

    A series of environmental tests were completed on one type of triple junction a-Si and two types of CuInSe2 thin film solar cells. The environmental tests include electron irradiation at energies of 0.7, 1.0, and 2.0 MeV, proton irradiation at energies of 0.115, 0.24, 0.3, 0.5, 1.0, and 3.0 MeV, post-irradiation annealing at temperatures between 20 C and 60 C, long term exposure to air mass zero (AM0) photons, measurement of the cells as a function of temperature and illumination intensity, and contact pull strength tests. As expected, the cells are very resistant to electron and proton irradiation. However, when a selected cell type is exposed to low energy protons designed to penetrate to the junction region, there is evidence of more significant damage. A significant amount of recovery was observed after annealing in several of the cells. However, it is not permanent and durable, but merely a temporary restoration, later nullified with additional irradiation. Contact pull strengths measured on the triple junction a-Si cells averaged 667 grams, and pull strengths measured on the Boeing CuInSe2 cells averaged 880 grams. Significant degradation of all cell types was observed after exposure to a 580 hour photon degradation test, regardless of whether the cells had been unirradiated or irradiated (electrons or protons). Although one cell from one manufacturer lost approximately 60 percent of its power after the photon test, several other cells from this manufacturer did not degrade at all.

  12. Measured and Simulated Dark J-V Characteristics of a-Si:H Single Junction p-i-n Solar Cells Irradiated with 40 keV Electrons

    NASA Technical Reports Server (NTRS)

    Lord, Kenneth; Woodyard, James R.

    2002-01-01

    The effect of 40 keV electron irradiation on a-Si:H p-i-n single-junction solar cells was investigated using measured and simulated dark J-V characteristics. EPRI-AMPS and PC-1D simulators were explored for use in the studies. The EPRI-AMPS simulator was employed and simulator parameters selected to produce agreement with measured J-V characteristics. Three current mechanisms were evident in the measured dark J-V characteristics after electron irradiation, namely, injection, shunting and a term of the form CV(sup m). Using a single discrete defect state level at the center of the band gap, good agreement was achieved between measured and simulated J-V characteristics in the forward-bias voltage region where the dark current density was dominated by injection. The current mechanism of the form CV(sup m) was removed by annealing for two hours at 140 C. Subsequent irradiation restored the CV(sup m) current mechanism and it was removed by a second anneal. Some evidence of the CV(sup m) term is present in device simulations with a higher level of discrete density of states located at the center of the bandgap.

  13. Thermogravimetric Study of Oxidation-Resistant Alloys for High-Temperature Solar Receivers

    NASA Astrophysics Data System (ADS)

    Olivares, Rene I.; Stein, Wes; Marvig, Paul

    2013-12-01

    Three special alloys likely to be suitable for high-temperature solar receivers were studied for their resistance to oxidation up to a temperature of 1050°C in dry atmospheres of CO2 and air. The alloys were Haynes HR160, Hastelloy X, and Haynes 230, all nickel-based alloys with greater than 20% chromium content. The oxidation rate of specimens cut from sample master alloys was followed by thermogravimetry by continuously monitoring the weight change with a microbalance for a test duration of 10 h. The corrosion resistance was deduced from the total weight increase of the specimens and the morphology of the oxide scale. The surface oxide layer formed (scale) was characterized by scanning electron microscopy and energy dispersive x-ray spectroscopy and in all cases was found to be chromia. Oxidation was analyzed by means of parabolic rate law, albeit in some instances linear breakaway corrosion was also observed. For the temperature range investigated, all alloys corroded more in CO2 than in air due to the formation of a stronger and more protective oxide scale in the presence of air. At 1000°C, the most resistant alloy to corrosion in CO2 was Haynes 230. Alloy Haynes HR160 was the most oxidized alloy at 1000°C in both CO2 and air. Hastelloy X oxidized to a similar extent in CO2 at both 900°C and 1000°C, but in air, it resisted oxidation better at 1000°C than either at 900°C or 1000°C.

  14. Fabrication and characterization of multiband solar cells based on highly mismatched alloys

    NASA Astrophysics Data System (ADS)

    López, N.; Braña, A. F.; García Núñez, C.; Hernández, M. J.; Cervera, M.; Martínez, M.; Yu, K. M.; Walukiewicz, W.; García, B. J.

    2015-10-01

    Multiband solar cells are one type of third generation photovoltaic devices in which an increase of the power conversion efficiency is achieved through the absorption of low energy photons while preserving a large band gap that determines the open circuit voltage. The ability to absorb photons from different parts of the solar spectrum originates from the presence of an intermediate energy band located within the band gap of the material. This intermediate band, acting as a stepping stone allows the absorption of low energy photons to transfer electrons from the valence band to the conduction band by a sequential two photons absorption process. It has been demonstrated that highly mismatched alloys offer a potential to be used as a model material system for practical realization of multiband solar cells. Dilute nitride GaAs1-xNx highly mismatched alloy with low mole fraction of N is a prototypical multiband semiconductor with a well-defined intermediate band. Currently, we are using chemical beam epitaxy to synthesize dilute nitride highly mismatched alloys. The materials are characterized by a variety of structural and optical methods to optimize their properties for multiband photovoltaic devices.

  15. Large-area triple-junction a-Si alloy production scaleup. Annual subcontract report, 17 March 1993--18 March 1994

    SciTech Connect

    Oswald, R.; Morris, J.

    1994-11-01

    The objective of this subcontract over its three-year duration is to advance Solarex`s photovoltaic manufacturing technologies, reduce its a-Si:H module production costs, increase module performance and expand the Solarex commercial production capacity. Solarex shall meet these objectives by improving the deposition and quality of the transparent front contact, by optimizing the laser patterning process, scaling-up the semiconductor deposition process, improving the back contact deposition, scaling-up and improving the encapsulation and testing of its a-Si:H modules. In the Phase 2 portion of this subcontract, Solarex focused on improving deposition of the front contact, investigating alternate feed stocks for the front contact,more » maximizing throughput and area utilization for all laser scribes, optimizing a-Si:H deposition equipment to achieve uniform deposition over large-areas, optimizing the triple-junction module fabrication process, evaluating the materials to deposit the rear contact, and optimizing the combination of isolation scribe and encapsulant to pass the wet high potential test. Progress is reported on the following: Front contact development; Laser scribe process development; Amorphous silicon based semiconductor deposition; Rear contact deposition process; Frit/bus/wire/frame; Materials handling; and Environmental test, yield and performance analysis.« less

  16. Transparent nickel selenide alloy counter electrodes for bifacial dye-sensitized solar cells exceeding 10% efficiency.

    PubMed

    Duan, Yanyan; Tang, Qunwei; He, Benlin; Li, Ru; Yu, Liangmin

    2014-11-07

    In the current work, we report a series of bifacial dye-sensitized solar cells (DSSCs) that provide power conversion efficiencies of more than 10% from bifacial irradiation. The device comprises an N719-sensitized TiO2 anode, a transparent nickel selenide (Ni-Se) alloy counter electrode (CE), and liquid electrolyte containing I(-)/I3(-) redox couples. Because of the high optical transparency, electron conduction ability, electrocatalytic activity of Ni-Se CEs, as well as dye illumination, electron excitation and power conversion efficiency have been remarkably enhanced. Results indicate that incident light from a transparent CE has a compensation effect to the light from the anode. The impressive efficiency along with simple preparation of the cost-effective Ni-Se alloy CEs highlights the potential application of bifacial illumination technique in robust DSSCs.

  17. Recovery of Pb-Sn Alloy and Copper from Photovoltaic Ribbon in Spent Solar Module

    NASA Astrophysics Data System (ADS)

    Lee, Jin-Seok; Ahn, Young-Soo; Kang, Gi-Hwan; Wang, Jei-Pil

    2017-09-01

    This research was attempted to recover metal alloy and copper from photovoltaic ribbon (PV ribbon) of spent solar module by means of thermal treatment. In this study, thermal method newly proposed was applied to remove coating layer composed of tin and lead and separate copper substrate. Using thermal treatment under reductive gas atmosphere with CH4 gas coating layer was easily melted down at the range of temperature of 700 °C to 800 °C. In the long run, metal alloy and copper substrate were successfully obtained and their chemical compositions were examined by inductively coupled plasma mass spectrometry (ICP-MS), scanning electron microscopy (SEM) and energy dispersive x-ray Spectroscopy (EDS).

  18. Platinum Alloy Tailored All-Weather Solar Cells for Energy Harvesting from Sun and Rain.

    PubMed

    Tang, Qunwei; Duan, Yanyan; He, Benlin; Chen, Haiyan

    2016-11-07

    Solar cells that can harvest energy in all weathers are promising in solving the energy crisis and environmental problems. The power outputs are nearly zero under dark conditions for state-of-the-art solar cells. To address this issue, we present herein a class of platinum alloy (PtM x , M=Ni, Fe, Co, Cu, Mo) tailored all-weather solar cells that can harvest energy from rain and realize photoelectric conversion under sun illumination. By tuning the stoichiometric Pt/M ratio and M species, the optimized solar cell yields a photoelectric conversion efficiency of 10.38 % under simulated sunlight irradiation (AM 1.5, 100 mW cm -2 ) as well as current of 3.90 μA and voltage of 115.52 μV under simulated raindrops. Moreover, the electric signals are highly dependent on the dripping velocity and the concentration of simulated raindrops along with concentrations of cation and anion. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Transparent metal selenide alloy counter electrodes for high-efficiency bifacial dye-sensitized solar cells.

    PubMed

    Duan, Yanyan; Tang, Qunwei; Liu, Juan; He, Benlin; Yu, Liangmin

    2014-12-22

    The exploration of cost-effective and transparent counter electrodes (CEs) is a persistent objective in the development of bifacial dye-sensitized solar cells (DSSCs). Transparent counter electrodes based on binary-alloy metal selenides (M-Se; M=Co, Ni, Cu, Fe, Ru) are now obtained by a mild, solution-based method and employed in efficient bifacial DSSCs. Owing to superior charge-transfer ability for the I(-) /I3 (-) redox couple, electrocatalytic activity toward I3 (-) reduction, and optical transparency, the bifacial DSSCs with CEs consisting of a metal selenide alloy yield front and rear efficiencies of 8.30 % and 4.63 % for Co0.85 Se, 7.85 % and 4.37 % for Ni0.85 Se, 6.43 % and 4.24 % for Cu0.50 Se, 7.64 % and 5.05 % for FeSe, and 9.22 % and 5.90 % for Ru0.33 Se in comparison with 6.18 % and 3.56 % for a cell with an electrode based on pristine platinum, respectively. Moreover, fast activity onset, high multiple start/stop capability, and relatively good stability demonstrate that these new electrodes should find applications in solar panels. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. The effects of a SiO2 coating on the corrosion parameters cpTi and Ti-6Al-7Nb alloy

    PubMed Central

    Basiaga, Marcin; Walke, Witold; Paszenda, Zbigniew; Karasiński, Paweł; Szewczenko, Janusz

    2014-01-01

    The aim of this paper was to evaluate the usefulness of the sol-gel method application, to modificate the surface of the Ti6Al7Nb alloy and the cpTi titanium (Grade 4) with SiO2 oxide, applied on the vascular implants to improve their hemocompatibility. Mechanical treatment was followed by film deposition on surface of the titanium samples. An appropriate selection of the process parameters was verified in the studies of corrosion, using potentiodynamic and impedance method. A test was conducted in the solution simulating blood vessels environment, in simulated body fluid at t = 37.0 ± 1 °C and pH = 7.0 ± 0.2. Results showed varied electrochemical properties of the SiO2 film, depending on its deposition parameters. Correlations between corrosion resistance and layer adhesion to the substrate were observed, depending on annealing temperature. PMID:25482412

  1. Highly conducting and wide band gap phosphorous doped nc-Si–QD/a-SiC films as n-type window layers for solar cells

    SciTech Connect

    Kar, Debjit; Das, Debajyoti, E-mail: erdd@iacs.res.in

    2016-05-23

    Nano-crystalline silicon quantum dots (Si-QDs) embedded in the phosphorous doped amorphous silicon carbide (a-SiC) matrix has been successfully prepared at a low temperature (300 °C) by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD) system from (SiH{sub 4} + CH{sub 4})-plasma with PH{sub 3} as the doping gas. The effect of PH{sub 3} flow rate on structural, optical and electrical properties of the films has been studied. Phosphorous doped nc-Si–QD/a-SiC films with high optical band gap (>1.9 eV) and superior conductivity (~10{sup −2} S cm{sup −1}) are obtained, which could be appropriately used as n-type window layers for nc-Si solarmore » cells in n-i-p configuration.« less

  2. Boiling behavior of sodium-potassium alloy in a bench-scale solar receiver

    NASA Astrophysics Data System (ADS)

    Moreno, J. B.; Andraka, C. E.; Moss, T. A.

    During 1989-90, a 75-kW(sub t) sodium reflux pool-boiler solar receiver was successfully demonstrated at Sandia National Laboratories. Significant features of this receiver include the following: (1) boiling sodium as the heat transfer medium, and (2) electric-discharge-machined (EDM) cavities as artificial nucleation sites to stabilize boiling. Since this first demonstration, design of a second-generation pool-boiler receiver that will bring the concept closer to commercialization has begun. For long life, the new receiver uses Haynes Alloy 230. For increased safety factors against film boiling and flooding, it has a refined shape and somewhat larger dimensions. To eliminate the need for trace heating, the receiver will boil the sodium-potassium alloy NaK-78 instead of sodium. To reduce manufacturing costs, it will use one of a number of alternatives to EDM cavities for stabilization of boiling. To control incipient-boiling superheats, especially during hot restarts, it will contain a small amount of inert gas. Before the new receiver design could be finalized, bench-scale tests of some of the proposed changes were necessary. A series of bench-scale pool boilers were built from Haynes Alloy 230 and filled with NaK-78. Various boiling-stabilizer candidates were incorporated into them, including laser-drilled cavities and a number of different sintered-powder-metal coatings. These bench-scale pool boilers have been operated at temperatures up to 750 C, heated by quartz lamps with incident radiant fluxes up to 95 W/sq cm. The effects of various orientations and added gases have been studied. Results of these studies are presented.

  3. Spectroscopic Ellipsometry Studies of Thin Film a-Si:H Solar Cell Fabrication by Multichamber Deposition in the n-i-p Substrate Configuration

    NASA Astrophysics Data System (ADS)

    Dahal, Lila Raj

    Real time spectroscopic ellipsometry (RTSE), and ex-situ mapping spectroscopic ellipsometry (SE) are powerful characterization techniques capable of performance optimization and scale-up evaluation of thin film solar cells used in various photovoltaics technologies. These non-invasive optical probes employ multichannel spectral detection for high speed and provide high precision parameters that describe (i) thin film structure, such as layer thicknesses, and (ii) thin film optical properties, such as oscillator variables in analytical expressions for the complex dielectric function. These parameters are critical for evaluating the electronic performance of materials in thin film solar cells and also can be used as inputs for simulating their multilayer optical performance. In this Thesis, the component layers of thin film hydrogenated silicon (Si:H) solar cells in the n-i-p or substrate configuration on rigid and flexible substrate materials have been studied by RTSE and ex-situ mapping SE. Depositions were performed by magnetron sputtering for the metal and transparent conducting oxide contacts and by plasma enhanced chemical vapor deposition (PECVD) for the semiconductor doped contacts and intrinsic absorber layers. The motivations are first to optimize the thin film Si:H solar cell in n-i-p substrate configuration for single-junction small-area dot cells and ultimately to scale-up the optimized process to larger areas with minimum loss in device performance. Deposition phase diagrams for both i- and p -layers on 2" x 2" rigid borosilicate glass substrate were developed as functions of the hydrogen-to-silane flow ratio in PECVD. These phase diagrams were correlated with the performance parameters of the corresponding solar cells, fabricated in the Cr/Ag/ZnO/n/i/ p/ITO structure. In both cases, optimization was achieved when the layers were deposited in the protocrystalline phase. Identical solar cell structures were fabricated on 6" x 6" borosilicate glass with

  4. Titanium Alloys Thin Sheet Welding with the Use of Concentrated Solar Energy

    NASA Astrophysics Data System (ADS)

    Pantelis, D. I.; Kazasidis, M.; Karakizis, P. N.

    2017-12-01

    The present study deals with the welding of titanium alloys thin sheets 1.3 mm thick, with the use of concentrated solar energy. The experimental part of the work took place at a medium size solar furnace at the installation of the Centre National de la Recherche Scientifique, at Odeillo, in Southern France, where similar and dissimilar defect-free welds of titanium Grades 4 and 6 were achieved, in the butt joint configuration. After the determination of the appropriate welding conditions, the optimum welded structures were examined and characterized microstructurally, by means of light optical microscopy, scanning electron microscopy, and microhardness testing. In addition, test pieces extracted from the weldments were tested under uniaxial tensile loading aiming to the estimation of the strength and the ductility of the joint. The analysis of the experimental results and the recorded data led to the basic concluding remarks which demonstrate increased hardness distribution inside the fusion area and severe loss of ductility, but adequate yield and tensile strength of the welds.

  5. Broadband light absorption enhancement in dye-sensitized solar cells with Au-Ag alloy popcorn nanoparticles

    NASA Astrophysics Data System (ADS)

    Xu, Qi; Liu, Fang; Liu, Yuxiang; Cui, Kaiyu; Feng, Xue; Zhang, Wei; Huang, Yidong

    2013-07-01

    In this paper, we present an investigation on the use of Au-Ag alloy popcorn-shaped nanoparticles (NPs) to realise the broadband optical absorption enhancement of dye-sensitized solar cells (DSCs). Both simulation and experimental results indicate that compared with regular plasmonic NPs, such as nano-spheres, irregular popcorn-shaped alloy NPs exhibit absorption enhancement over a broad wavelength range due to the excitation of localized surface plasmons (LSPs) at different wavelengths. The power conversion efficiency (PCE) of DSCs is enhanced by 16% from 5.26% to 6.09% by incorporating 2.38 wt% Au-Ag alloy popcorn NPs. Moreover, by adding a scattering layer on the exterior of the counter electrode, the popcorn NPs demonstrate an even stronger ability to increase the PCE by 32% from 5.94% to 7.85%, which results from the more efficient excitation of the LSP mode on the popcorn NPs.

  6. Broadband light absorption enhancement in dye-sensitized solar cells with Au-Ag alloy popcorn nanoparticles.

    PubMed

    Xu, Qi; Liu, Fang; Liu, Yuxiang; Cui, Kaiyu; Feng, Xue; Zhang, Wei; Huang, Yidong

    2013-01-01

    In this paper, we present an investigation on the use of Au-Ag alloy popcorn-shaped nanoparticles (NPs) to realise the broadband optical absorption enhancement of dye-sensitized solar cells (DSCs). Both simulation and experimental results indicate that compared with regular plasmonic NPs, such as nano-spheres, irregular popcorn-shaped alloy NPs exhibit absorption enhancement over a broad wavelength range due to the excitation of localized surface plasmons (LSPs) at different wavelengths. The power conversion efficiency (PCE) of DSCs is enhanced by 16% from 5.26% to 6.09% by incorporating 2.38 wt% Au-Ag alloy popcorn NPs. Moreover, by adding a scattering layer on the exterior of the counter electrode, the popcorn NPs demonstrate an even stronger ability to increase the PCE by 32% from 5.94% to 7.85%, which results from the more efficient excitation of the LSP mode on the popcorn NPs.

  7. Broadband light absorption enhancement in dye-sensitized solar cells with Au-Ag alloy popcorn nanoparticles

    PubMed Central

    Xu, Qi; Liu, Fang; Liu, Yuxiang; Cui, Kaiyu; Feng, Xue; Zhang, Wei; Huang, Yidong

    2013-01-01

    In this paper, we present an investigation on the use of Au-Ag alloy popcorn-shaped nanoparticles (NPs) to realise the broadband optical absorption enhancement of dye-sensitized solar cells (DSCs). Both simulation and experimental results indicate that compared with regular plasmonic NPs, such as nano-spheres, irregular popcorn-shaped alloy NPs exhibit absorption enhancement over a broad wavelength range due to the excitation of localized surface plasmons (LSPs) at different wavelengths. The power conversion efficiency (PCE) of DSCs is enhanced by 16% from 5.26% to 6.09% by incorporating 2.38 wt% Au-Ag alloy popcorn NPs. Moreover, by adding a scattering layer on the exterior of the counter electrode, the popcorn NPs demonstrate an even stronger ability to increase the PCE by 32% from 5.94% to 7.85%, which results from the more efficient excitation of the LSP mode on the popcorn NPs. PMID:23817586

  8. Ag-Pd-Cu alloy inserted transparent indium tin oxide electrodes for organic solar cells

    SciTech Connect

    Kim, Hyo-Joong; Seo, Ki-Won; Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.kr

    2014-09-01

    The authors report on the characteristics of Ag-Pd-Cu (APC) alloy-inserted indium tin oxide (ITO) films sputtered on a glass substrate at room temperature for application as transparent anodes in organic solar cells (OSCs). The effect of the APC interlayer thickness on the electrical, optical, structural, and morphological properties of the ITO/APC/ITO multilayer were investigated and compared to those of ITO/Ag/ITO multilayer electrodes. At the optimized APC thickness of 8 nm, the ITO/APC/ITO multilayer exhibited a resistivity of 8.55 × 10{sup −5} Ω cm, an optical transmittance of 82.63%, and a figure-of-merit value of 13.54 × 10{sup −3} Ω{sup −1}, comparable to those of the ITO/Ag/ITOmore » multilayer. Unlike the ITO/Ag/ITO multilayer, agglomeration of the metal interlayer was effectively relieved with APC interlayer due to existence of Pd and Cu elements in the thin region of the APC interlayer. The OSCs fabricated on the ITO/APC/ITO multilayer showed higher power conversion efficiency than that of OSCs prepared on the ITO/Ag/ITO multilayer below 10 nm due to the flatness of the APC layer. The improved performance of the OSCs with ITO/APC/ITO multilayer electrodes indicates that the APC alloy interlayer prevents the agglomeration of the Ag-based metal interlayer and can decrease the thickness of the metal interlayer in the oxide-metal-oxide multilayer of high-performance OSCs.« less

  9. Bench-scale screening tests for a boiling sodium-potassium alloy solar receiver

    NASA Astrophysics Data System (ADS)

    Moreno, J. B.; Moss, T. A.

    1993-06-01

    Bench-scale tests were carried out in support of the design of a second-generation 75-kW(sub t) reflux pool-boiler solar receiver. The receiver will be made from Haynes Alloy 230 and will contain the sodium-potassium alloy NaK-78. The bench-scale tests used quartz lamp heated boilers to screen candidate boiling stabilization materials and methods at temperatures up to 750 degree C. Candidates that provided stable boiling were tested for hot-restart behavior. Poor stability was obtained with single 1/4-inch diameter patches of powdered metal hot press sintered onto the wetted side of the heat-input area. Laser-drilled and electric discharge machined cavities in the heated surface also performed poorly. Small additions of xenon, and heated-surface tilt out of the vertical, dramatically improved poor boiling stability; additions of helium or oxygen did not. The most stable boiling was obtained when the entire heat-input area was covered by a powdered-metal coating. The effect of heated-area size was assessed for one coating: at low incident fluxes, when even this coating performed poorly, increasing the heated-area size markedly improved boiling stability. Good hot-restart behavior was not observed with any candidate, although results were significantly better with added xenon in a boiler shortened from 3 to 2 feet. In addition to the screening tests, flash-radiography imaging of metal-vapor bubbles during boiling was attempted. Contrary to the Cole-Rohsenow correlation, these bubble-size estimates did not vary with pressure; instead they were constant, consistent with the only other alkali metal measurements, but about 1/2 their size.

  10. Trade-offs of the opto-electrical properties of a-Si:H solar cells based on MOCVD BZO films.

    PubMed

    Chen, Ze; Zhang, Xiao-dan; Liang, Jun-hui; Fang, Jia; Liang, Xue-jiao; Sun, Jian; Zhang, De-kun; Chen, Xin-liang; Huang, Qian; Zhao, Ying

    2015-01-07

    Boron-doped zinc oxide (BZO) films, deposited by metal-organic chemical vapor deposition (MOCVD), have been widely used as front electrodes in thin-film solar cells due to their native pyramidal surface structure, which results in efficient light trapping. This light trapping effect can enhance the short-circuit current density (Jsc) of solar cells. However, nanocracks or voids in the silicon active layer may form when the surface morphology of the BZO is too sharp; this usually leads to degraded electrical properties of the cells, such as open-circuit voltage (Voc) and the fill factor (FF), which in turn decreases efficiency (Eff) [Bailat et al., Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on. IEEE, 2006, vol. 2, pp. 1533-1536]. In this paper, an etching and coating method was proposed to modify the sharp "pyramids" on the surface of the BZO films. As a result, an evident enhancement was achieved for these modified, BZO-based cells' Voc, FF, and Eff, although the Jsc exhibited a small decrease. In order to increase the Jsc and maintain the improved electrical properties (Voc, FF) of the cell, a thin BZO coating, deposited by MOCVD, was introduced to coat the sputtering-treated BZO film. Finally, we optimized the trade-off among the Voc, FF, and Jsc, that is, we identified a regime with an increase of the Jsc as well as a further improvement of the other electrical properties.

  11. Improvement of Electropolishing of 1100 Al Alloy for Solar Thermal Applications

    NASA Astrophysics Data System (ADS)

    Aguilar-Sierra, Sara María; Echeverría E, Félix

    2018-03-01

    Aluminum sheets-based mirrors are finding applicability in high-temperature solar concentrating technologies because they are cost-effective, lightweight and have high mechanical properties. Nonetheless, the reflectance percentages obtained by electropolishing are not close to the reflectance values of the currently used evaporated films. Therefore, controlling key factors affecting electropolishing processes became essential in order to achieve highly reflective aluminum surfaces. This study investigated the effect of both the electropolishing process and previous heat treatment on the total reflectance of the AA 1100 aluminum alloy. An acid electrolyte and a modified Brytal process were evaluated. Total reflectance was measured by means of UV-Vis spectrophotometry. Reflectance values higher than 80% at 600 nm were achieved for both electrolytes. Optical microscopy and scanning electron microscopy images showed uneven dissolution for the acid electropolished samples causing a reflectance drop in the 200-450 nm region. The influence of heat treatment, previously to electropolishing, was tested at two different temperatures and various holding times. It was found that reflectance increases around 15% for the heat-treated and electropolished samples versus the non-heat-treated ones. A heat treatment at low temperature combined with a short holding time was enough to improve the sample total reflectance.

  12. Calculation of optical parameters for covalent binary alloys used in optical memories/solar cells: a modified approach

    NASA Astrophysics Data System (ADS)

    Bhatnagar, Promod K.; Gupta, Poonam; Singh, Laxman

    2001-06-01

    Chalcogenide based alloys find applications in a number of devices like optical memories, IR detectors, optical switches, photovoltaics, compound semiconductor heterosrtuctures etc. We have modified the Gurman's statistical thermodynamic model (STM) of binary covalent alloys. In the Gurman's model, entropy calculations are based on the number of structural units present. The need to modify this model arose due to the fact that it gives equal probability for all the tetrahedra present in the alloy. We have modified the Gurman's model by introducing the concept that the entropy is based on the bond arrangement rather than that on the structural units present. In the present work calculation based on this modification have been presented for optical properties, which find application in optical switching/memories, solar cells and other optical devices. It has been shown that the calculated optical parameters (for a typical case of GaxSe1-x) based on modified model are closer to the available experimental results. These parameters include refractive index, extinction coefficient, dielectric functions, optical band gap etc. GaxSe1-x has been found to be suitable for reversible optical memories also, where phase change (a yields c and vice versa) takes place at specified physical conditions. DTA/DSC studies also suggest the suitability of this material for optical switching/memory applications. We have also suggested possible use of GaxSe1-x (x = 0.4) in place of oxide layer in a Metal - Oxide - Semiconductor type solar cells. The new structure is Metal - Ga2Se3 - GaAs. The I-V characteristics and other parameters calculated for this structure are found to be much better than that for Si based solar cells. Maximum output power is obtained at the intermediate layer thickness approximately 40 angstroms for this typical solar cell.

  13. Design of Semiconducting Tetrahedral Mn 1-xZn xO Alloys and Their Application to Solar Water Splitting

    DOE PAGES

    Peng, Haowei; Ndione, Paul F.; Ginley, David S.; ...

    2015-03-18

    Transition metal oxides play important roles as contact and electrode materials, but their use as active layers in solar energy conversion requires achieving semiconducting properties akin to those of conventional semiconductors like Si or GaAs. In particular, efficient bipolar carrier transport is a challenge in these materials. Based on the prediction that a tetrahedral polymorph of MnO should have such desirable semiconducting properties, and the possibility to overcome thermodynamic solubility limits by nonequilibrium thin-film growth, we exploit both structure-property and composition-structure relationships to design and realize novel wurtzite-structure Mn 1₋xZn xO alloys. At Zn compositions above x≈0.3, thin films ofmore » these alloys assume the tetrahedral wurtzite structure instead of the octahedral rocksalt structure of MnO, thereby enabling semiconductor properties that are unique among transition metal oxides, i.e., a band gap within the visible spectrum, a band-transport mechanism for both electron and hole carriers, electron doping, and a band lineup suitable for solar hydrogen generation. In conclusion, a proof of principle is provided by initial photo-electrocatalytic device measurements, corroborating, in particular, the predicted favorable hole-transport properties of these alloys.« less

  14. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

    PubMed

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-12-03

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

  15. Amorphous silicon solar cells

    NASA Astrophysics Data System (ADS)

    Takahashi, K.; Konagai, M.

    The fabrication, performance, and applications of a-Si solar cells are discussed, summarizing the results of recent experimental investigations and trial installations. Topics examined include the fundamental principles and design strategies of solar power installations; the characteristics of monocrystalline-Si solar cells; techniques for reducing the cost of solar cells; independent, linked, and hybrid solar power systems; proposed satellite solar power systems; and the use of solar cells in consumer appliances. Consideration is given to the history of a-Si, a-Si fabrication techniques, quality criteria for a-Si films, solar cells based on a-Si, and techniques for increasing the efficiency and lowering the cost of a-Si solar cells. Graphs, diagrams, drawings, and black-and-white and color photographs are provided.

  16. Corrosion of alloys in a chloride molten salt (NaCl-LiCl) for solar thermal technologies

    DOE PAGES

    Gomez-Vidal, Judith C.; Tirawat, Robert

    2016-06-01

    Next-generation solar power conversion systems in concentrating solar power (CSP) applications require high-temperature advanced fluids in the range of 600–800 °C. Current commercial CSP plants use molten nitrate salt mixtures as the heat transfer fluid and the thermal energy storage (TES) media while operating with multiple hours of energy capacity and at temperatures lower than 565 °C. At higher temperatures, the nitrates cannot be used because they decompose. Molten chloride salts are candidates for CSP applications because of their high decomposition temperatures and good thermal properties; but they can be corrosive to common alloys used in vessels, heat exchangers, andmore » piping at these elevated temperatures. In this article, we present the results of the corrosion evaluations of several alloys in eutectic 34.42 wt% NaCl – 65.58 wt% LiCl at 650–700 °C in nitrogen atmosphere. Electrochemical evaluations were performed using open-circuit potential followed by a potentiodynamic polarization sweep. Corrosion rates were determined using Tafel slopes and Faraday's law. A temperature increase of as little as 50 °C more than doubled the corrosion rate of AISI stainless steel 310 and Incoloy 800H compared to the initial 650 °C test. These alloys exhibited localized corrosion. Inconel 625 was the most corrosion-resistant alloy with a corrosion rate of 2.80±0.38 mm/year. For TES applications, corrosion rates with magnitudes of a few millimeters per year are not acceptable because of economic considerations. Additionally, localized corrosion (intergranular or pitting) can be catastrophic. Furthermore, corrosion-mitigation approaches are required for advanced CSP plants to be commercially viable.« less

  17. Corrosion of alloys in a chloride molten salt (NaCl-LiCl) for solar thermal technologies

    SciTech Connect

    Gomez-Vidal, Judith C.; Tirawat, Robert

    Next-generation solar power conversion systems in concentrating solar power (CSP) applications require high-temperature advanced fluids in the range of 600–800 °C. Current commercial CSP plants use molten nitrate salt mixtures as the heat transfer fluid and the thermal energy storage (TES) media while operating with multiple hours of energy capacity and at temperatures lower than 565 °C. At higher temperatures, the nitrates cannot be used because they decompose. Molten chloride salts are candidates for CSP applications because of their high decomposition temperatures and good thermal properties; but they can be corrosive to common alloys used in vessels, heat exchangers, andmore » piping at these elevated temperatures. In this article, we present the results of the corrosion evaluations of several alloys in eutectic 34.42 wt% NaCl – 65.58 wt% LiCl at 650–700 °C in nitrogen atmosphere. Electrochemical evaluations were performed using open-circuit potential followed by a potentiodynamic polarization sweep. Corrosion rates were determined using Tafel slopes and Faraday's law. A temperature increase of as little as 50 °C more than doubled the corrosion rate of AISI stainless steel 310 and Incoloy 800H compared to the initial 650 °C test. These alloys exhibited localized corrosion. Inconel 625 was the most corrosion-resistant alloy with a corrosion rate of 2.80±0.38 mm/year. For TES applications, corrosion rates with magnitudes of a few millimeters per year are not acceptable because of economic considerations. Additionally, localized corrosion (intergranular or pitting) can be catastrophic. Furthermore, corrosion-mitigation approaches are required for advanced CSP plants to be commercially viable.« less

  18. 1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cells

    NASA Technical Reports Server (NTRS)

    Abdulaziz, Salman; Payson, J. S.; Li, Yang; Woodyard, James R.

    1990-01-01

    A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.

  19. Identification of salt-alloy combinations for thermal energy storage applications in advanced solar dynamic power systems

    NASA Technical Reports Server (NTRS)

    Whittenberger, J. D.; Misra, A. K.

    1987-01-01

    Thermodynamic calculations based on the available data for flouride salt systems reveal that a number of congruently melting compositions and eutectics exist which have the potential to meet the lightweight, high energy storage requirements imposed for advanced solar dynamic systems operating between about 1000 and 1400 K. Compatibility studies to determine suitable containment alloys to be used with NaF-22CaF2-13MgF2, NaF-32CaF2, and NaF-23MgF2 have been conducted at the eutectic temperature + 25 K for each system. For these three NaF-based eutectics, none of the common, commercially available high temperature alloys appear to offer adequate corrosion resistance for a long lifetime; however mild steel, pure nickel and Nb-1Zr could prove useful. These latter materials suggest the possibility that a strong, corrosion resistant, nonrefractory, elevated temperature alloy based on the Ni-Ni3Nb system could be developed.

  20. Annealing characteristics of irradiated hydrogenated amorphous silicon solar cells

    NASA Technical Reports Server (NTRS)

    Payson, J. S.; Abdulaziz, S.; Li, Y.; Woodyard, J. R.

    1991-01-01

    It was shown that 1 MeV proton irradiation with fluences of 1.25E14 and 1.25E15/sq cm reduces the normalized I(sub SC) of a-Si:H solar cell. Solar cells recently fabricated showed superior radiation tolerance compared with cells fabricated four years ago; the improvement is probably due to the fact that the new cells are thinner and fabricated from improved materials. Room temperature annealing was observed for the first time in both new and old cells. New cells anneal at a faster rate than old cells for the same fluence. From the annealing work it is apparent that there are at least two types of defects and/or annealing mechanisms. One cell had improved I-V characteristics following irradiation as compared to the virgin cell. The work shows that the photothermal deflection spectroscopy (PDS) and annealing measurements may be used to predict the qualitative behavior of a-Si:H solar cells. It was anticipated that the modeling work will quantitatively link thin film measurements with solar cell properties. Quantitative predictions of the operation of a-Si:H solar cells in a space environment will require a knowledge of the defect creation mechanisms, defect structures, role of defects on degradation, and defect passivation and annealing mechanisms. The engineering data and knowledge base for justifying space flight testing of a-Si:H alloy based solar cells is being developed.

  1. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology

    PubMed Central

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-01-01

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm2, and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p+−n homojunction through the formation of re-grown crystalline silicon layer (~5–10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method. PMID:26632759

  2. Electric measurements of PV heterojunction structures a-SiC/c-Si

    NASA Astrophysics Data System (ADS)

    Perný, Milan; Šály, Vladimír; Janíček, František; Mikolášek, Miroslav; Váry, Michal; Huran, Jozef

    2018-01-01

    Due to the particular advantages of amorphous silicon or its alloys with carbon in comparison to conventional crystalline materials makes such a material still interesting for study. The amorphous silicon carbide may be used in a number of micro-mechanical and micro-electronics applications and also for photovoltaic energy conversion devices. Boron doped thin layers of amorphous silicon carbide, presented in this paper, were prepared due to the optimization process for preparation of heterojunction solar cell structure. DC and AC measurement and subsequent evaluation were carried out in order to comprehensively assess the electrical transport processes in the prepared a-SiC/c-Si structures. We have investigated the influence of methane content in deposition gas mixture and different electrode configuration.

  3. Si-Ge-Sn alloys with 1.0 eV gap for CPV multijunction solar cells

    SciTech Connect

    Roucka, Radek, E-mail: radek@translucentinc.com; Clark, Andrew; Landini, Barbara

    2015-09-28

    Si-Ge-Sn ternary group IV alloys offer an alternative to currently used 1.0 eV gap materials utilized in multijunction solar cells. The advantage of Si-Ge-Sn is the ability to vary both the bandgap and lattice parameter independently. We present current development in fabrication of Si-Ge-Sn alloys with gaps in the 1.0 eV range. Produced material exhibits excellent structural properties, which allow for integration with existing III-V photovoltaic cell concepts. Time dependent room temperature photoluminescence data demonstrate that these materials have long carrier lifetimes. Absorption tunable by compositional changes is observed. As a prototype device set utilizing the 1 eV Si-Ge-Sn junction,more » single junction Si-Ge-Sn device and triple junction device with Si-Ge-Sn subcell have been fabricated. The resulting I-V and external quantum efficiency data show that the Si-Ge-Sn junction is fully functional and the performance is comparable to other 1.0 eV gap materials currently used.« less

  4. Structural and compositional dependence of the CdTexSe1−x alloy layer photoactivity in CdTe-based solar cells

    PubMed Central

    Poplawsky, Jonathan D.; Guo, Wei; Paudel, Naba; Ng, Amy; More, Karren; Leonard, Donovan; Yan, Yanfa

    2016-01-01

    The published external quantum efficiency data of the world-record CdTe solar cell suggests that the device uses bandgap engineering, most likely with a CdTexSe1−x alloy layer to increase the short-circuit current and overall device efficiency. Here atom probe tomography, transmission electron microscopy and electron beam-induced current are used to clarify the dependence of Se content on the photoactive properties of CdTexSe1−x alloy layers in bandgap-graded CdTe solar cells. Four solar cells were prepared with 50, 100, 200 and 400 nm-thick CdSe layers to reveal the formation, growth, composition, structure and photoactivity of the CdTexSe1−x alloy with respect to the degree of Se diffusion. The results show that the CdTexSe1−x layer photoactivity is highly dependent on the crystalline structure of the alloy (zincblende versus wurtzite), which is also dependent on the Se and Te concentrations. PMID:27460872

  5. Structural and compositional dependence of the CdTexSe 1-x alloy layer photoactivity in CdTe-based solar cells

    DOE PAGES

    Poplawsky, Jonathan D.; Guo, Wei; Paudel, Naba; ...

    2016-07-27

    The published external quantum efficiency data of the world-record CdTe solar cell suggests that the device uses bandgap engineering, most likely with a CdTe xSe 1₋x alloy layer to increase the short-circuit current and overall device efficiency. Here atom probe tomography, transmission electron microscopy and electron beam-induced current are used to clarify the dependence of Se content on the photoactive properties of CdTe xSe 1₋x alloy layers in bandgap-graded CdTe solar cells. Four solar cells were prepared with 50, 100, 200 and 400 nm-thick CdSe layers to reveal the formation, growth, composition, structure and photoactivity of the CdTe xSe 1₋xmore » alloy with respect to the degree of Se diffusion. Finally, the results show that the CdTe xSe 1₋x layer photoactivity is highly dependent on the crystalline structure of the alloy (zincblende versus wurtzite), which is also dependent on the Se and Te concentrations.« less

  6. Beyond 11% efficient sulfide kesterite Cu 2Zn xCd 1–xSnS 4 solar cell: Effects of cadmium alloying

    SciTech Connect

    Yan, Chang; Sun, Kaiwen; Huang, Jialiang

    2017-04-03

    Here, kesterite Cu 2ZnSnS 4 (CZTS) thin-film solar cells have drawn worldwide attention because of outstanding performance and earth-abundant constituents. However, problems such as coexistence of complex secondary phases, the band tailing issue, short minority lifetime, bulk defects, and undesirable band alignment at p-n interfaces need to be addressed for further efficiency improvement. In this regard, Cd alloying shows promise for dealing with some of these problems. In this work, a beyond 11% efficient Cd-alloyed CZTS solar cell is achieved, and the effects of Cd-alloying and mechanism underpinning the performance improvement have been investigated. The introduction of Cd can significantlymore » reduce the band tailing issue, which is confirmed by the reduction in the difference between the photoluminescence peak and optical band gap (E g) as well as decreased Urbach energy. The microstructure, minority lifetime, and electrical properties of CZTS absorber are greatly improved by Cd alloying. Further XPS analyses show that the partial Cd alloying slightly reduces the band gap of CZTS via elevating the valence band maximum of CZTS. This suggests that there are opportunities for further efficiency improvement by engineering the absorber and the associated interface with the buffer.« less

  7. Influence of Surface Energy on Organic Alloy Formation in Ternary Blend Solar Cells Based on Two Donor Polymers.

    PubMed

    Gobalasingham, Nemal S; Noh, Sangtaik; Howard, Jenna B; Thompson, Barry C

    2016-10-05

    The compositional dependence of the open-circuit voltage (V oc ) in ternary blend bulk heterojunction (BHJ) solar cells is correlated with the miscibility of polymers, which may be influenced by a number of attributes, including crystallinity, the random copolymer effect, or surface energy. Four ternary blend systems featuring poly(3-hexylthiophene-co-3-(2-ethylhexyl)thiophene) (P3HT 75 -co-EHT 25 ), poly(3-hexylthiophene-co-(hexyl-3-carboxylate)), herein referred to as poly(3-hexylthiophene-co-3-hexylesterthiophene) (P3HT 50 -co-3HET 50 ), poly(3-hexylthiophene-thiophene-diketopyrrolopyrrole) (P3HTT-DPP-10%), and an analog of P3HTT-DPP-10% with 40% of 3-hexylthiophene exchanged for 2-(2-methoxyethoxy)ethylthiophen-2-yl (3MEO-T) (featuring an electronically decoupled oligoether side-chain), referred to as P3HTTDPP-MEO40%, are explored in this work. All four polymers are semicrystalline and rich in rr-P3HT content and perform well in binary devices with PC 61 BM. Except for P3HTTDPP-MEO40%, all polymers exhibit similar surface energies (∼21-22 mN/m). P3HTTDPP-MEO40% exhibits an elevated surface energy of around 26 mN/m. As a result, despite the similar optoelectronic properties and binary solar cell performance of P3HTTDPP-MEO40% compared to P3HTT-DPP-10%, the former exhibits a pinned V oc in two different sets of ternary blend devices. This is a stark contrast to previous rr-P3HT-based systems and demonstrates that surface energy, and its influence on miscibility, plays a critical role in the formation of organic alloys and can supersede the influence of crystallinity, the random copolymer effect, similar backbone structures, and HOMO/LUMO considerations. Therefore, we confirm surface energy compatibility as a figure-of-merit for predicting the compositional dependence of the V oc in ternary blend solar cells and highlight the importance of polymer miscibility in organic alloy formation.

  8. Development of large area nanostructured silicon-hydrogen alloy material with improved stability for solar cell application by argon dilution method

    NASA Astrophysics Data System (ADS)

    Dey, Arka; Das, Mrinmay; Datta, Joydeep; Jana, Rajkumar; Dhar, Joydeep; Sil, Sayantan; Biswas, Debasish; Banerjee, Chandan; Ray, Partha Pratim

    2016-07-01

    Here we have presented the results of large area (30 × 30 cm2) silicon-hydrogen alloy material and solar cell by argon dilution method. As an alternative to hydrogen dilution, argon dilution method has been applied to develop single junction solar cell with appreciable stability. Optimization of deposition conditions revealed that 95% argon dilution gives a nanostructured material with improved transport property and less light induced degradation. The minority carrier diffusion length (L d ) and mobility-lifetime (μτ) product of the material with 95% argon dilution degrades least after light soaking. Also the density of states (DOS) below conduction level reveals that this material is less defective. Solar cell with this argon diluted material has been fabricated with all the layers deposited by argon dilution method. Finally we have compared the argon diluted solar cell results with the optimized hydrogen diluted solar cell. Light soaking study proves that it is possible to develop stable solar cell on large area by argon dilution method and that the degradation of argon diluted solar cell is less than that of hydrogen diluted one. [Figure not available: see fulltext.

  9. Significant reduction in NiO band gap upon formation of Lix Ni1-x O alloys: applications to solar energy conversion.

    PubMed

    Alidoust, Nima; Toroker, Maytal Caspary; Keith, John A; Carter, Emily A

    2014-01-01

    Long-term sustainable solar energy conversion relies on identifying economical and versatile semiconductor materials with appropriate band structures for photovoltaic and photocatalytic applications (e.g., band gaps of ∼ 1.5-2.0 eV). Nickel oxide (NiO) is an inexpensive yet highly promising candidate. Its charge-transfer character may lead to longer carrier lifetimes needed for higher efficiencies, and its conduction band edge is suitable for driving hydrogen evolution via water-splitting. However, NiO's large band gap (∼ 4 eV) severely limits its use in practical applications. Our first-principles quantum mechanics calculations show band gaps dramatically decrease to ∼ 2.0 eV when NiO is alloyed with Li2O. We show that Lix Ni1-x O alloys (with x=0.125 and 0.25) are p-type semiconductors, contain states with no impurity levels in the gap and maintain NiO's desirable charge-transfer character. Lastly, we show that the alloys have potential for photoelectrochemical applications, with band edges well-placed for photocatalytic hydrogen production and CO2 reduction, as well as in tandem dye-sensitized solar cells as a photocathode. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Alloying-assisted phonon engineering of layered BiInSe3@nickel foam for efficient solar-enabled water evaporation.

    PubMed

    Yao, J D; Zheng, Z Q; Yang, G W

    2017-11-02

    The fresh water crisis has emerged as one of the most urgent bottlenecks hindering the rapid development of modern industry and society. Solar energy-driven water evaporation represents a potential green and sustainable solution to address this issue. Herein, for the first time, centimeter-scale BiInSe 3 -coated nickel foam (BiInSe 3 @NF) as an efficient solar-enabled evaporator was successfully achieved and exploited for solar energy-driven water evaporation. Benefitting from multiple scattering-induced light trapping of the rough substrate, strong light-matter interaction and intermediate band (IB)-induced efficient phonon emission of BiInSe 3 , the BiInSe 3 @NF device achieved a high evaporation rate of 0.83 kg m -2 h -1 under 1 sun irradiation, which is 2.5 times that of pure water. These figures-of-merit are superior to recently reported state-of-the-art photothermal conversion materials, such as black titania, plasmonic assembly and carbon black. In addition, superior stability over a period of 60 days was demonstrated. In summary, the current contribution depicts a facile scenario for design, production and application of an economical and efficient solar-enabled BiInSe 3 @NF evaporator. More importantly, the phonon engineering strategy based on alloying induced IB states can be readily applied to other analogous van der Waals materials and a series of superior vdWM alloys toward photothermal applications can be expected in the near future.

  11. Hydrogen density of states and defects densities in a-Si:H

    SciTech Connect

    Deane, S.C.; Powell, M.J.; Robertson, J.

    1996-12-31

    The properties of hydrogenated amorphous silicon (a-Si:H) and its devices depend fundamentally on the density of states (DOS) in the gap due to dangling bonds. It is generally believed that the density of dangling bonds is controlled by a chemical equilibrium with the weak Si-Si bonds which form the localized valence band tail states. Further details are given of a unified model of the hydrogen density of states and defect pool of a-Si:H. The model is compared to other defect models and extended to describe a-Si alloys and the creation of valence band tail states during growth.

  12. Alloy-Controlled Work Function for Enhanced Charge Extraction in All-Inorganic CsPbBr3 Perovskite Solar Cells.

    PubMed

    Ding, Jie; Zhao, Yuanyuan; Duan, Jialong; He, Benlin; Tang, Qunwei

    2018-05-09

    All-inorganic CsPbX 3 (X=I, Br) perovskite solar cells are regarded as cost-effective and stable alternatives for next-generation photovoltaics. However, sluggish charge extraction at CsPbX 3 /charge-transporting material interfaces, which arises from large interfacial energy differences, have markedly limited the further enhancement of solar cell performance. In this work, the work function (WF) of the back electrode is tuned by doping alloyed PtNi nanowires in carbon ink to promote hole extraction from CsPbBr 3 halides, while an intermediate energy by setting carbon quantum dots (CQDs) at TiO 2 /CsPbBr 3 interface bridges electron transportation. The preliminary results demonstrate that the matching WFs and intermediate energy level markedly reduce charge recombination. A power conversion efficiency of 7.17 % is achieved for the WF-tuned all-inorganic perovskite solar cell, in comparison with 6.10 % for the pristine device, and this is further increased to 7.86 % by simultaneously modifying with CQDs. The high efficiency and improved stability make WF-controlled all-inorganic perovskite solar cells promising to develop advanced photovoltaic platforms. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Rationally Controlled Synthesis of CdSexTe1-x Alloy Nanocrystals and Their Application in Efficient Graded Bandgap Solar Cells.

    PubMed

    Wen, Shiya; Li, Miaozi; Yang, Junyu; Mei, Xianglin; Wu, Bin; Liu, Xiaolin; Heng, Jingxuan; Qin, Donghuan; Hou, Lintao; Xu, Wei; Wang, Dan

    2017-11-08

    CdSe x Te 1-x semiconductor nanocrystals (NCs), being rod-shaped/irregular dot-shaped in morphology, have been fabricated via a simple hot-injection method. The NCs composition is well controlled through varying molar ratios of Se to Te precursors. Through changing the composition of the CdSe x Te 1-x NCs, the spectral absorption of the NC thin film between 570-800 nm is proved to be tunable. It is shown that the bandgap of homogeneously alloyed CdSe x Te 1-x active thin film is nonlinearly correlated with the different compositions, which is perceived as optical bowing. The solar cell devices based on CdSe x Te 1-x NCs with the structure of ITO/ZnO/CdSe/CdSe x Te 1-x /MoO x /Au and the graded bandgap ITO/ZnO/CdSe( w / o )/CdSe x Te 1-x /CdTe/MoO x /Au are systematically evaluated. It was found that the performance of solar cells degrades almost linearly with the increase of alloy NC film thickness with respect to ITO/ZnO/CdSe/CdSe 0.2 Te 0.8 /MoO x /Au. From another perspective, in terms of the graded bandgap structure of ITO/ZnO/CdSe/CdSe x Te 1-x /CdTe/MoO x /Au, the performance is improved in contrast with its single-junction analogues. The graded bandgap structure is proved to be efficient when absorbing spectrum and the solar cells fabricated under the structure of ITO/ZnO/CdSe 0.8 Te 0.2 /CdSe 0.2 Te 0.8 /CdTe/MoO x /Au indicate power conversion efficiency (PCE) of 6.37%, a value among the highest for solution-processed inversely-structured CdSe x Te 1-x NC solar cells. As the NC solar cells are solution-processed under environmental conditions, they are promising for fabricating solar cells at low cost, roll by roll and in large area.

  14. Rationally Controlled Synthesis of CdSexTe1−x Alloy Nanocrystals and Their Application in Efficient Graded Bandgap Solar Cells

    PubMed Central

    Wen, Shiya; Li, Miaozi; Yang, Junyu; Mei, Xianglin; Wu, Bin; Liu, Xiaolin; Heng, Jingxuan; Hou, Lintao; Xu, Wei; Wang, Dan

    2017-01-01

    CdSexTe1−x semiconductor nanocrystals (NCs), being rod-shaped/irregular dot-shaped in morphology, have been fabricated via a simple hot-injection method. The NCs composition is well controlled through varying molar ratios of Se to Te precursors. Through changing the composition of the CdSexTe1−x NCs, the spectral absorption of the NC thin film between 570–800 nm is proved to be tunable. It is shown that the bandgap of homogeneously alloyed CdSexTe1−x active thin film is nonlinearly correlated with the different compositions, which is perceived as optical bowing. The solar cell devices based on CdSexTe1−x NCs with the structure of ITO/ZnO/CdSe/CdSexTe1−x/MoOx/Au and the graded bandgap ITO/ZnO/CdSe(w/o)/CdSexTe1−x/CdTe/MoOx/Au are systematically evaluated. It was found that the performance of solar cells degrades almost linearly with the increase of alloy NC film thickness with respect to ITO/ZnO/CdSe/CdSe0.2Te0.8/MoOx/Au. From another perspective, in terms of the graded bandgap structure of ITO/ZnO/CdSe/CdSexTe1−x/CdTe/MoOx/Au, the performance is improved in contrast with its single-junction analogues. The graded bandgap structure is proved to be efficient when absorbing spectrum and the solar cells fabricated under the structure of ITO/ZnO/CdSe0.8Te0.2/CdSe0.2Te0.8/CdTe/MoOx/Au indicate power conversion efficiency (PCE) of 6.37%, a value among the highest for solution-processed inversely-structured CdSexTe1−x NC solar cells. As the NC solar cells are solution-processed under environmental conditions, they are promising for fabricating solar cells at low cost, roll by roll and in large area. PMID:29117132

  15. Lightweight, Flexible Solar Cells on Stainless Steel Foil and Polymer for Space and Stratospheric Applications

    NASA Technical Reports Server (NTRS)

    Beernink, Kevin; Guha, Subhendu; Yang, Jeff; Banerjee, Arindam; Lord, Ken; DeMaggio, Greg; Liu, Frank; Pietka, Ginger; Johnson, Todd; Reinhout, Melanie; hide

    2007-01-01

    The availability of low-cost, lightweight and reliable photovoltaic (PV) modules is an important component in reducing the cost of satellites and spacecraft. In addition, future high-power spacecraft will require lightweight PV arrays with reduced stowage volume. In terms of the requirements for low mass, reduced stowage volume, and the harsh space environment, thin film amorphous silicon (a-Si) alloy cells have several advantages over other material technologies (1). The deposition process is relatively simple, inexpensive, and applicable to large area, lightweight, flexible substrates. The temperature coefficient has been found to be between -0.2 and -0.3 %/degC for high-efficiency triple-junction a-Si alloy cells, which is superior for high temperature operation compared to crystalline Si and triple-junction GaAs/InGaP/Ge devices at 0.53 %/degC and 0.45 %/degC, respectively (2). As a result, the reduction in efficiency at high temperature typical in space conditions is less for a-Si alloy cells than for their crystalline counterparts. Additionally, the a-Si alloy cells are relatively insensitive to electron and proton bombardment. We have shown that defects that are created by electrons with energies between 0.2 to 2 MeV with fluence up to 1x10(exp 15) e/sq cm and by protons with energy in the range 0.3 MeV to 5 MeV with fluence up to 1x10(exp 13) p/sq cm can be annealed out at 70 C in less than 50 hours (1). Further, modules incorporating United Solar s a-Si alloy cells have been tested on the MIR space station for 19 months with only minimal degradation (3). For stratospheric applications, such as the high altitude airship, the required PV arrays are typically of considerably higher power than current space arrays. Airships typically have a large area available for the PV, but weight is of critical importance. As a result, low cost and high specific power (W/kg) are key factors for airship PV arrays. Again, thin-film a-Si alloy solar cell technology is well

  16. Aqueous Phase Synthesis of CuIn Alloy Nanoparticles and Their Application for a CIS (CuInSe2)-Based Printable Solar Battery

    PubMed Central

    Takahashi, Hideyuki; Fujiki, Hironari; Yokoyama, Shun; Kai, Takayuki; Tohji, Kazuyuki

    2018-01-01

    To apply CuInSe2 (CIS)-based printable solar batteries; an aqueous phase synthesis method of Cu-In (CI) alloy nanoparticles is studied. Metal complexes in the original solution are restricted to homogenized species by utilizing calculations. For example; [(Cu2+)(ASP2−)2] [ASP: the “body (C4H5O4N)” of aspartic acid (C4H7O4N)] is predominant in the pH 6–13 region (CASP/CCu > 6); while In complexes can be restricted to [(In3+)(OH−)(EDTA4−)] (pH 10–12; CEDTA/CIn = 2) and/or [(In3+)(ASP2−)2] (pH 7–9; CASP/CIn = 5). These results indicate that the added amount of complex reagents should be determined by calculations and not the stoichiometric ratio. The reduction potential of homogenized metal complex is measured by cyclic voltammetry (CV) measurements and evaluated by Nernst’s equation using the overall stability constants. CuIn alloy nanoparticles with a small amount of byproduct (In nanoparticles) are successfully synthesized. The CI precursor films are spin-coated onto the substrate using a 2-propanol dispersion. Then the films are converted into CIS solar cells; which show a maximum conversion efficiency of 2.30%. The relationship between the open circuit potential; short circuit current density; and fill factor indicate that smoothing of the CIS films and improving the crystallinity and thickness increase the solar cell conversion efficiency. PMID:29642413

  17. Investigation of the stability and 1.0 MeV proton radiation resistance of commercially produced hydrogenated amorphous silicon alloy solar cells

    NASA Technical Reports Server (NTRS)

    Lord, Kenneth R., II; Walters, Michael R.; Woodyard, James R.

    1994-01-01

    The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys is reported. A number of different device structures were irradiated with 1.0 MeV protons. The cells were annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters or fluences below 1(exp 14) cm(exp -2); fluences above 1(exp 14) cm(exp -2) require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed in dark I-V measurements. The current mechanisms were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

  18. Investigation of the Stability and 1.0 MeV Proton Radiation Resistance of Commercially Produced Hydrogenated Amorphous Silicon Alloy Solar Cells

    NASA Technical Reports Server (NTRS)

    Lord, Kenneth R., II; Walters, Michael R.; Woodyard, James R.

    1994-01-01

    The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys is reported. A number of different device structures were irradiated with 1.0 MeV protons. The cells were insensitive to proton fluences below 1E12 sq cm. The parameters of the irradiated cells were restored with annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters for fluences below 1E14 sq cm fluences above 1E14 sq cm require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed In dark I-V measurements. The current mechanism were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

  19. Structural and electrical investigations of a-Si:H(i) and a-Si:H(n+) stacked layers for improving the interface and passivation qualities

    NASA Astrophysics Data System (ADS)

    Hsieh, Yu-Lin; Lee, Chien-Chieh; Lu, Chia-Cheng; Fuh, Yiin-Kuen; Chang, Jenq-Yang; Lee, Ju-Yi; Li, Tomi T.

    2017-07-01

    A symmetrically stacked structure [(a-Si:H(n+)/a-Si:H(i)/CZ wafer (n)/a-Si:H(i)/a-Si:H(n+)] was used to optimize the growth process conditions of the n-type hydrogenated amorphous silicon [a-Si:H(n+)] thin films. Here a-Si:H(n+) film was used as back surface field (BSF) layer for the silicon heterojunction solar cell and all stacked films were prepared by conventional radio-frequency plasma-enhanced chemical vapor deposition. The characterizations of the effective carrier lifetime (τeff), electrical and structural properties, as well as correlation with the hydrogen dilution ratio (R=H2/SiH4) were systematically discussed with the emphasis on the effectiveness of the passivation layer using the lifetime tester, spectroscopic ellipsometry, and hall measurement. High quality of a stacked BSF layer (intrinsic/n-type a-Si:H layer) with effective carrier lifetime of 1.8 ms can be consistently obtained. This improved passivation layer can be primarily attributed to the synergy of chemical and field effect to significantly reduce the surface recombination.

  20. Lead-Sulfide-Selenide Quantum Dots and Gold-Copper Alloy Nanoparticles Augment the Light-Harvesting Ability of Solar Cells.

    PubMed

    Das, Aparajita; Deepa, Melepurath; Ghosal, Partha

    2017-04-05

    Lead-sulfide-selenide (PbSSe) quantum dots (QDs) and gold-copper (AuCu) alloy nanoparticles (NPs) were incorporated into a cadmium sulfide (CdS)/titanium oxide (TiO 2 ) photoanode for the first time to achieve enhanced conversion of solar energy into electricity. PbSSe QDs with a band gap of 1.02 eV extend the light-harvesting range of the photoanode from the visible region to the near-infrared region. The conduction band (CB) edge of the PbSSe QDs is wedged between the CBs of TiO 2 and CdS; this additional level coupled with the good electrical conductivity of the dots facilitate charge transport and collection, and a high power conversion efficiency (PCE) of 4.44 % is achieved for the champion cell with the TiO 2 /PbSSe/CdS electrode. Upon including AuCu alloy NPs in the QD-sensitized electrodes, light absorption is enhance by plasmonic and light-scattering effects and also by the injection of hot electrons to the CBs of the QDs. Comparison of the incident photon-to-current conversion efficiency enhancement factors in addition to fluorescence decay and impedance studies reveal that the PbSSe QDs and AuCu alloy NPs promote charge injection to the current collector and increase the photogenerated charges produced, which thus enables the TiO 2 /PbSSe/CdS/AuCu cell to deliver the highest PCE of 5.26 % among all the various photoanode compositions used. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. ELLIPSOMETRIC STUDY OF a-Si:H NUCLEATION, GROWTH, AND INTERFACES

    NASA Astrophysics Data System (ADS)

    Collins, R. W.

    Recent in situ and spectroscopic ellipsometry investigations of hydrogenated amorphous silicon (a-Si:H) nucleation behavior, microstructural evolution, and interface formation are reviewed. An outline of the commonly applied experimental techniques and data analysis is also presented. In situ ellipsometry reveals a nuclei formation and convergence sequence in the first 50Å of a-Si:H growth by rf plasma deposition from silane on c-Si and metal substrates. This sequence provides evidence of favorable growth chemistry that results in material with a low density of structural defects. The influence of deposition parameters and processes on the nucleation and subsequent microstructural evolution of a-Si:H is covered in detail. Among the other topics discussed include: nucleation of microcrystalline Si, evolution of surface roughness on a-Si:H, inert and reactive gas plasma modification of a-Si:H, and formation of a-Si:H heterostructures with SiO2, wide band gap alloys, and Bdoped a-Si:H.

  2. Binary synaptic connections based on memory switching in a-Si:H for artificial neural networks

    NASA Technical Reports Server (NTRS)

    Thakoor, A. P.; Lamb, J. L.; Moopenn, A.; Khanna, S. K.

    1987-01-01

    A scheme for nonvolatile associative electronic memory storage with high information storage density is proposed which is based on neural network models and which uses a matrix of two-terminal passive interconnections (synapses). It is noted that the massive parallelism in the architecture would require the ON state of a synaptic connection to be unusually weak (highly resistive). Memory switching using a-Si:H along with ballast resistors patterned from amorphous Ge-metal alloys is investigated for a binary programmable read only memory matrix. The fabrication of a 1600 synapse test array of uniform connection strengths and a-Si:H switching elements is discussed.

  3. Ultralight monolithic photovoltaic modules of amorphous silicon alloys

    NASA Astrophysics Data System (ADS)

    Hanak, J. J.

    A process has been developed for fabrication of roll-up, monolithic, photovoltaic (PV) modules made of amorphous silicon (a-Si) alloys. They consist of tandem-junction solar cells deposited by a continuous, roll-to-roll process onto thin, foil substrates of bare metal, high temperature resin, or metal coated with insulators. They have the following characteristics: size, up to 71 cm x 30.5 cm; total thickness, 8 to 50 microns, power-to-weight and power-to-volume ratios at AM1, 2.4 kW/kg and 6.5 MW/cu m, respectively. Cells of a-Si alloys are up to 100 times as tolerant to irradiation with 1 MeV protons than crystalline cells and the damage is easily annealable. The modules have high power density and stability, they are portable, stowable, deployable, retractable, tolerant to radiation and meteorite or projectile impact, and attractive for terrestrial and aerospace applications.

  4. Corrosion evaluation of alloys and MCrAlX coatings in molten carbonates for thermal solar applications

    DOE PAGES

    Gomez-Vidal, Judith C.; Noel, John; Weber, Jacob

    2016-07-30

    Here, stainless steels (SS) 310, 321, 347, Incoloy 800H (In800H), alumina-forming austenitic (AFA-OC6), Ni superalloy Inconel 625 (IN625), and MCrAlX (M: Ni, and/or Co; X: Y, Hf, Si, and/or Ta) coatings were corroded in molten carbonates in N 2 and bone-dry CO 2 atmospheres. Electrochemical tests in molten eutectics K 2CO 3-Na 2CO 3 and Na 2CO 3-K 2CO 3-Li 2CO 3 at temperatures higher than 600 °C were evaluated using an open-circuit potential followed by a potentiodynamic polarization sweep to determine the corrosion rates. Because the best-performing alloys at 750 °C were In800H followed by SS310, these two alloysmore » were selected as the substrate material for the MCrAlX coatings. The coatings were able to mitigate corrosion in molten carbonates environments. The corrosion of substrates SS310 and In800H was reduced from ~2500 um/year to 34 um/year when coated with high-velocity oxyfuel (HVOF) NiCoCrAlHfSiY and pre-oxidized (air, 900 °C, 24 h, 0.5 °C/min) before molten carbonate exposure at 700 °C in bone-dry CO 2 atmosphere. Metallographic characterization of the corroded surfaces showed that the formation of a uniform alumina scale during the pre-oxidation seems to protect the alloy from the molten carbonate attack.« less

  5. GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell

    NASA Astrophysics Data System (ADS)

    Da Silva, M.; Almosni, S.; Cornet, C.; Létoublon, A.; Levallois, C.; Rale, P.; Lombez, L.; Guillemoles, J.-F.; Durand, O.

    2015-03-01

    GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted nitride alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN alloy and our recent studies of some of the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate, as a first step toward the elaboration on a Si substrate) 1μm-thick GaAsPN alloy has been grown by MBE. After a post-growth annealing step, this alloy displays a strong absorption around 1.8-1.9 eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. Early stage GaAsPN PIN solar cells prototypes have been grown on GaP (001) substrates, with 2 different absorber thicknesses (1μm and 0.3μm). The external quantum efficiencies and the I-V curves show that carriers have been extracted from the GaAsPN alloy absorbers, with an open-circuit voltage of 1.18 V, while displaying low short circuit currents meaning that the GaAsPN structural properties needs a further optimization. A better carrier extraction has been observed with the absorber displaying the smallest thickness, which is coherent with a low carriers diffusion length in our GaAsPN compound. Considering all the pathways for improvement, the efficiency obtained under AM1.5G is however promising.

  6. Gallium Phosphide Integrated with Silicon Heterojunction Solar Cells

    NASA Astrophysics Data System (ADS)

    Zhang, Chaomin

    It has been a long-standing goal to epitaxially integrate III-V alloys with Si substrates which can enable low-cost microelectronic and optoelectronic systems. Among the III-V alloys, gallium phosphide (GaP) is a strong candidate, especially for solar cells applications. Gallium phosphide with small lattice mismatch ( 0.4%) to Si enables coherent/pseudomorphic epitaxial growth with little crystalline defect creation. The band offset between Si and GaP suggests that GaP can function as an electron-selective contact, and it has been theoretically shown that GaP/Si integrated solar cells have the potential to overcome the limitations of common a-Si based heterojunction (SHJ) solar cells. Despite the promising potential of GaP/Si heterojunction solar cells, there are two main obstacles to realize high performance photovoltaic devices from this structure. First, the growth of the polar material (GaP) on the non-polar material (Si) is a challenge in how to suppress the formation of structural defects, such as anti-phase domains (APD). Further, it is widely observed that the minority-carrier lifetime of the Si substrates is significantly decreased during epitaxially growth of GaP on Si. In this dissertation, two different GaP growth methods were compared and analyzed, including migration-enhanced epitaxy (MEE) and traditional molecular beam epitaxy (MBE). High quality GaP can be realized on precisely oriented (001) Si substrates by MBE growth, and the investigation of structural defect creation in the GaP/Si epitaxial structures was conducted using high resolution X-ray diffraction (HRXRD) and high resolution transmission electron microscopy (HRTEM). The mechanisms responsible for lifetime degradation were further investigated, and it was found that external fast diffusors are the origin for the degradation. Two practical approaches including the use of both a SiNx diffusion barrier layer and P-diffused layers, to suppress the Si minority-carrier lifetime degradation

  7. NREL/industry interaction: Amorphous silicon alloy research team formation

    NASA Astrophysics Data System (ADS)

    Luft, Werner

    1994-06-01

    The low material cost and proven manufacturability of amorphous silicon (a-Si) alloy photovoltaic technology make it ideally suited for large-scale terrestrial applications. The present efficiency of a-Si alloy modules is, however, much lower than the 15% stable efficiency that would lead to significant penetration of the electric utility bulk-power market. The slow progress in achieving high stabilized a-Si alloy module efficiencies may in part be attributed to the fact that only in the last few years did we emphasize stable efficiencies. A mission-focused integrated effort among the a-Si PV industry, universities, and the National Renewable Energy Laboratory (NREL) would help. To foster research integration, NREL has established four research teams with significant industry participation. In the 11 months since the research team formation, a close interaction among the a-Si PV industry, universities, and NREL has been achieved and has resulted in mission-directed research.

  8. Metastability of a-SiOx:H thin films for c-Si surface passivation

    NASA Astrophysics Data System (ADS)

    Serenelli, L.; Martini, L.; Imbimbo, L.; Asquini, R.; Menchini, F.; Izzi, M.; Tucci, M.

    2017-01-01

    The adoption of a-SiOx:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiNx on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiOx:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Sisbnd H and Sisbnd O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm2. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiOx:H/c-Si/a-SiOx:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiOx passivation properties, was furthermore considered. In particular we monitored the UV light soaking effect on c-Si wafers after a-SiOx:H coating by PECVD and after a thermal annealing treatment at 300 °C for 30 min, having selected these conditions on the basis of the study of the effect due to different temperatures and durations. We correlated the lifetime evolution and the metastability effect of thermal annealing to the a-SiOx:H/c-Si interface considering the evolution

  9. Integral bypass diodes in an amorphous silicon alloy photovoltaic module

    NASA Technical Reports Server (NTRS)

    Hanak, J. J.; Flaisher, H.

    1991-01-01

    Thin-film, tandem-junction, amorphous silicon (a-Si) photovoltaic modules were constructed in which a part of the a-Si alloy cell material is used to form bypass protection diodes. This integral design circumvents the need for incorporating external, conventional diodes, thus simplifying the manufacturing process and reducing module weight.

  10. Annealing characteristics of amorphous silicon alloy solar cells irradiated with 1.00 MeV protons

    NASA Technical Reports Server (NTRS)

    Abdulaziz, Salman S.; Woodyard, James R.

    1991-01-01

    Amorphous Si:H and amorphous Si sub x, Ge sub (1-x):H solar cells were irradiated with 1.00 MeV proton fluences in the range of 1.00E14 to 1.25E15 cm (exp -2). Annealing of the short circuit current density was studied at 0, 22, 50, 100, and 150 C. Annealing times ranged from an hour to several days. The measurements confirmed that annealing occurs at 0 C and the initial characteristics of the cells are restored by annealing at 200 C. The rate of annealing does not appear to follow a simple nth order reaction rate model. Calculations of the short-circuit current density using quantum efficiency measurements and the standard AM1.5 global spectrum compare favorably with measured values. It is proposed that the degradation in J sub sc with irradiation is due to carrier recombination through the fraction of D (o) states bounded by the quasi-Fermi energies. The time dependence of the rate of annealing of J sub sc does appear to be consistent with the interpretation that there is a thermally activated dispersive transport mechanism which leads to the passivation of the irradiation induced defects.

  11. RECOMBINATION PROCESSES AND NATURE OF THE TAIL AND GAP STATES IN a-Si:H and a-Si:H/a-SiNx:H MULTILAYERS

    NASA Astrophysics Data System (ADS)

    Morigaki, K.

    We discuss recombination processes and nature of the tail and gap states in a-Si:H and a-Si:H/a-SiNx:H multilayers on the basis of our ODMR, luminescence, photoinduced absorption and ENDOR measurements. We present other results relevant to this subject and attempt to interpret them in terms of our model.

  12. Combinatorial alloying improves bismuth vanadate photoanodes via reduced monoclinic distortion

    DOE PAGES

    Newhouse, P. F.; Guevarra, D.; Umehara, M.; ...

    2018-01-01

    Energy technologies are enabled by materials innovations, requiring efficient methods to search high dimensional parameter spaces, such as multi-element alloying for enhancing solar fuels photoanodes.

  13. Research on silicon-carbon alloys and interfaces. Final subcontract report, 15 February 1991--31 July 1994

    SciTech Connect

    Abelson, J.R.

    1995-07-01

    This report describes work performed to develop improved p-type wide-band-gap hydrogenated amorphous silicon-carbon alloy (a-Si{sub 1-x}C{sub x:}H) thin films and interfaces for the ``top junction`` in hydrogenated amorphous silicon (a-Si:H)-based p-i-n solar cells. We used direct current reactive magnetron sputtering to deposit undoped a-Si{sub 1-x}C{sub x}H films with a Tauc band gap E{sub g} of 1.90 eV, a sub-band-gap absorption of 0.4 (at 1.2 eV), an Urbach energy of 55 MeV, an ambipolar diffusion length of 100 nm, an air-mass-one photoconductivity of 10{sup {minus}6}/{Omega}-cm, and a dark conductivity of 8{times} 1O{sup {minus}11}/{Omega}-cm. p{sup +}a-Si{sub 1-x}C{sub x}:H films with a Taucmore » band gap of 1.85 eV have a dark conductivity of 8 {times} 10{sup {minus}6}/{Omega}-cm and thermal activation energy of 0.28 eV. We used in-situ spectroscopic ellipsometry and post-growth X-ray photoelectron spectroscopy to determine the relative roles of H and Si in the chemical reduction of SnO{sub 2} in the early stages of film growth. We used in-situ spectroscopic ellipsometry to show that a-Si:H can be transformed into {mu}c-Si:H in a subsurface region under appropriate growth conditions. We also determined substrate cleaning and ion bombardment conditions which improve the adhesion of a-Si{sub 1-x}C{sub x}:H films.« less

  14. Thermal stability of photovoltaic a-Si:H determined by neutron reflectometry

    SciTech Connect

    Qviller, A. J., E-mail: atlejq@ife.no; Haug, H.; You, C. C.

    2014-12-08

    Neutron and X-ray reflectometry were used to determine the layer structure and hydrogen content of thin films of amorphous silicon (a-Si:H) deposited onto crystalline silicon (Si) wafers for surface passivation in solar cells. The combination of these two reflectometry techniques is well suited for non-destructive probing of the structure of a-Si:H due to being able to probe buried interfaces and having sub-nanometer resolution. Neutron reflectometry is also unique in its ability to allow determination of density gradients of light elements such as hydrogen (H). The neutron scattering contrast between Si and H is strong, making it possible to determine themore » H concentration in the deposited a-Si:H. In order to correlate the surface passivation properties supplied by the a-Si:H thin films, as quantified by obtainable effective minority carrier lifetime, photoconductance measurements were also performed. It is shown that the minority carrier lifetime falls sharply when H has been desorbed from a-Si:H by annealing.« less

  15. Broad spectrum solar cell

    DOEpatents

    Walukiewicz, Wladyslaw [Kensington, CA; Yu, Kin Man [Lafayette, CA; Wu, Junqiao [Richmond, CA; Schaff, William J [Ithaca, NY

    2007-05-15

    An alloy having a large band gap range is used in a multijunction solar cell to enhance utilization of the solar energy spectrum. In one embodiment, the alloy is In.sub.1-xGa.sub.xN having an energy bandgap range of approximately 0.7 eV to 3.4 eV, providing a good match to the solar energy spectrum. Multiple junctions having different bandgaps are stacked to form a solar cell. Each junction may have different bandgaps (realized by varying the alloy composition), and therefore be responsive to different parts of the spectrum. The junctions are stacked in such a manner that some bands of light pass through upper junctions to lower junctions that are responsive to such bands.

  16. Ultralight amorphous silicon alloy photovoltaic modules for space and terrestrial applications

    NASA Astrophysics Data System (ADS)

    Hanak, J. J.; Fulton, C.; Myatt, A.; Nath, P.; Woodyard, J. R.

    This paper gives a review and an update on recently developed ultralight photovoltaic modules based on amorphous silicon (a-Si) alloys. They consist of tandem-junction solar cells deposited by a continuous, roll-to-roll process onto thin, foil substrates of bare metal, high temperature resin or metal coated with insulators. They have the following features: size, up to 71 cm x 30.5 cm; total thickness, 8 to 50 microns; power-to-weight at AM1, 2.4 kW/kg; and power-to-volume ratio 6.5 MW/cu m. Cells of a-Si alloys are over 50 times more tolerant to irradiation with 1 MeV and with 200 keV protons than crystalline cells and the damage is easily annealable. The modules have high power density and stability, they are portable, stowable, deployable, retractable, tolerant to radiation and meteorite or projectile impact and attractive for terrestrial and aerospace applications.

  17. Highly improved passivation of c-Si surfaces using a gradient i a-Si:H layer

    NASA Astrophysics Data System (ADS)

    Lee, Soonil; Ahn, Jaehyun; Mathew, Leo; Rao, Rajesh; Zhang, Zhongjian; Kim, Jae Hyun; Banerjee, Sanjay K.; Yu, Edward T.

    2018-04-01

    Surface passivation using intrinsic a-Si:H (i a-Si:H) films plays a key role in high efficiency c-Si heterojunction solar cells. In this study, we demonstrate improved passivation quality using i a-Si:H films with a gradient-layered structure consisting of interfacial, transition, and capping layers deposited on c-Si surfaces. The H2 dilution ratio (R) during deposition was optimized individually for the interfacial and capping layers, which were separated by a transition layer for which R changed gradually between its values for the interfacial and capping layers. This approach yielded a significant reduction in surface carrier recombination, resulting in improvement of the minority carrier lifetime from 1480 μs for mono-layered i a-Si:H passivation to 2550 μs for the gradient-layered passivation approach.

  18. Nanocatalytic growth of Si nanowires from Ni silicate coated SiC nanoparticles on Si solar cell.

    PubMed

    Parida, Bhaskar; Choi, Jaeho; Ji, Hyung Yong; Park, Seungil; Lim, Gyoungho; Kim, Keunjoo

    2013-09-01

    We investigated the nanocatalytic growth of Si nanowires on the microtextured surface of crystalline Si solar cell. 3C-SiC nanoparticles have been used as the base for formation of Ni silicate layer in a catalytic reaction with the Si melt under H2 atmosphere at an annealing temperature of 1100 degrees C. The 10-nm thick Ni film was deposited after the SiC nanoparticles were coated on the microtextured surface of the Si solar cell by electron-beam evaporation. SiC nanoparticles form a eutectic alloy surface of Ni silicate and provide the base for Si supersaturation as well as the Ni-Si alloy layer on Si substrate surface. This bottom reaction mode for the solid-liquid-solid growth mechanism using a SiC nanoparticle base provides more stable growth of nanowires than the top reaction mode growth mechanism in the absence of SiC nanoparticles. Thermally excited Ni nanoparticle forms the eutectic alloy and provides collectively excited electrons at the alloy surface, which reduces the activation energy of the nanocatalytic reaction for formation of nanowires.

  19. Alloy materials

    DOEpatents

    Hans Thieme, Cornelis Leo; Thompson, Elliott D.; Fritzemeier, Leslie G.; Cameron, Robert D.; Siegal, Edward J.

    2002-01-01

    An alloy that contains at least two metals and can be used as a substrate for a superconductor is disclosed. The alloy can contain an oxide former. The alloy can have a biaxial or cube texture. The substrate can be used in a multilayer superconductor, which can further include one or more buffer layers disposed between the substrate and the superconductor material. The alloys can be made a by process that involves first rolling the alloy then annealing the alloy. A relatively large volume percentage of the alloy can be formed of grains having a biaxial or cube texture.

  20. Recent progress in Si thin film technology for solar cells

    NASA Astrophysics Data System (ADS)

    Kuwano, Yukinori; Nakano, Shoichi; Tsuda, Shinya

    1991-11-01

    Progress in Si thin film technology 'specifically amorphous Si (a-Si) and polycrystalline Si (poly-Si) thin film' for solar cells is summarized here from fabrication method, material, and structural viewpoints. In addition to a-Si, primary results on poly-Si thin film research are discussed. Various applications for a-Si solar cells are mentioned, and consumer applications and a-Si solar cell photovoltaic systems are introduced. New product developments include see-through solar cells, solar cell roofing tiles, and ultra-light flexible solar cells. As for new systems, air conditioning equipment powered by solar cells is described. Looking to the future, the proposed GENESIS project is discussed.

  1. Liquid-phase explosive crystallization of electron-beam-evaporated a-Si films induced by flash lamp annealing

    NASA Astrophysics Data System (ADS)

    Ohdaira, Keisuke; Matsumura, Hideki

    2013-01-01

    We succeed in the formation of micrometer-order-thick polycrystalline silicon (poly-Si) films through the flash-lamp-induced liquid-phase explosive crystallization (EC) of precursor a-Si films prepared by electron-beam (EB) evaporation. The velocity of the explosive crystallization (vEC) is estimated to be ˜14 m/s, which is close to the velocity of the liquid-phase epitaxy (LPE) of Si at a temperature around the melting point of a-Si of 1418 K. Poly-Si films formed have micrometer-order-long grains stretched along a lateral crystallization direction, and X-ray diffraction (XRD) and electron diffraction pattern measurements reveal that grains in poly-Si films tend to have a particular orientation. These features are significantly different from our previous results: the formation of poly-Si films containing randomly-oriented 10-nm-sized fine grains formed from a-Si films prepared by catalytic chemical vapor deposition (Cat-CVD) or sputtering. One possible reason for the emergence of a different EC mode in EB-evaporated a-Si films is the suppression of solid-phase nucleation (SPN) during Flash Lamp Annealing (FLA) due to tensile stress which precursor a-Si films originally hold. Poly-Si films formed from EB-evaporated a-Si films would contribute to the realization of high-efficiency thin-film poly-Si solar cells because of large and oriented grains.

  2. High-efficiency silicon heterojunction solar cells: Status and perspectives

    SciTech Connect

    De Wolf, S.

    Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups aremore » reporting devices with conversion efficiencies well over 20 % on n-type wafers, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short- wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long-wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metalisation grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical transport

  3. High-efficiency silicon heterojunction solar cells: Status and perspectives

    SciTech Connect

    De Wolf, S.; Geissbuehler, J.; Loper, P.

    Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups aremore » reporting devices with conversion efficiencies well over 20 % on both-sides contacted n-type cells, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short-wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long- wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metallization grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of

  4. VANADIUM ALLOYS

    DOEpatents

    Smith, K.F.; Van Thyne, R.J.

    1959-05-12

    This patent deals with vanadium based ternary alloys useful as fuel element jackets. According to the invention the ternary vanadium alloys, prepared in an arc furnace, contain from 2.5 to 15% by weight titanium and from 0.5 to 10% by weight niobium. Characteristics of these alloys are good thermal conductivity, low neutron capture cross section, good corrosion resistance, good welding and fabricating properties, low expansion coefficient, and high strength.

  5. BRAZING ALLOYS

    DOEpatents

    Donnelly, R.G.; Gilliland, R.G.; Slaughter, G.M.

    1963-02-26

    A brazing alloy which, in the molten state, is characterized by excellent wettability and flowability, said alloy being capable of forming a corrosion resistant brazed joint wherein at least one component of said joint is graphite and the other component is a corrosion resistant refractory metal, said alloy consisting essentially of 20 to 50 per cent by weight of gold, 20 to 50 per cent by weight of nickel, and 15 to 45 per cent by weight of molybdenum. (AEC)

  6. Heat storage in alloy transformations

    NASA Technical Reports Server (NTRS)

    Birchenall, C. E.

    1980-01-01

    The feasibility of using metal alloys as thermal energy storage media was investigated. The elements selected as candidate media were limited to aluminum, copper, magnesium, silicon, zinc, calcium, and phosphorus on the basis of low cost and latent heat of transformation. Several new eutectic alloys and ternary intermetallic phases were determined. A new method employing X-ray absorption techniques was developed to determine the coefficients of thermal expansion of both the solid and liquid phases and the volume change during phase transformation. The method and apparatus are discussed and the experimental results are presented for aluminum and two aluminum-eutectic alloys. Candidate materials were evaluated to determine suitable materials for containment of the metal alloys. Graphite was used to contain the alloys during the volume change measurements. Silicon carbide was identified as a promising containment material and surface-coated iron alloys were also evaluated. System considerations that are pertinent if alloy eutectics are used as thermal energy storage media are discussed. Potential applications to solar receivers and industrial furnaces are illustrated schematically.

  7. URANIUM ALLOYS

    DOEpatents

    Seybolt, A.U.

    1958-04-15

    Uranium alloys containing from 0.1 to 10% by weight, but preferably at least 5%, of either zirconium, niobium, or molybdenum exhibit highly desirable nuclear and structural properties which may be improved by heating the alloy to about 900 d C for an extended period of time and then rapidly quenching it.

  8. ZIRCONIUM ALLOY

    DOEpatents

    Wilhelm, H.A.; Ames, D.P.

    1959-02-01

    A binary zirconiuin--antimony alloy is presented which is corrosion resistant and hard containing from 0.07% to 1.6% by weight of Sb. The alloys have good corrosion resistance and are useful in building equipment for the chemical industry.

  9. Nonswelling alloy

    DOEpatents

    Harkness, S.D.

    1975-12-23

    An aluminum alloy containing one weight percent copper has been found to be resistant to void formation and thus is useful in all nuclear applications which currently use aluminum or other aluminum alloys in reactor positions which are subjected to high neutron doses.

  10. PLUTONIUM ALLOYS

    DOEpatents

    Chynoweth, W.

    1959-06-16

    The preparation of low-melting-point plutonium alloys is described. In a MgO crucible Pu is placed on top of the lighter alloying metal (Fe, Co, or Ni) and the temperature raised to 1000 or 1200 deg C. Upon cooling, the alloy slug is broke out of the crucible. With 14 at. % Ni the m.p. is 465 deg C; with 9.5 at. % Fe the m.p. is 410 deg C; and with 12.0 at. % Co the m.p. is 405 deg C. (T.R.H.) l6262 l6263 ((((((((Abstract unscannable))))))))

  11. Preliminary Results on Thermal Shock Behavior of CuZnAl Shape Memory Alloy Using a Solar Concentrator as Heating Source

    NASA Astrophysics Data System (ADS)

    Tudora, C.; Abrudeanu, M.; Stanciu, S.; Anghel, D.; Plaiaşu, G. A.; Rizea, V.; Ştirbu, I.; Cimpoeşu, N.

    2018-06-01

    It is highly accepted that martensitic transformation can be induced by temperature variation and by stress solicitation. Using a solar concentrator, we manage to increase the material surface temperature (till 573 respectively 873 K) in very short periods of time in order to analyze the material behavior under thermal shocks. The heating/cooling process was registered and analyzed during the experiments. Material surface was analyzed before and after thermal shocks by microstructure point of view using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The experiments follow the material behavior during fast heating and propose the possibility of activating smart materials using the sun heat for aerospace applications.

  12. NREL/industry interaction: Amorphous silicon alloy research team formation

    SciTech Connect

    Luft, W.

    1994-06-30

    The low material cost and proven manufacturability of amorphous silicon (a-Si) alloy photovoltaic technology make it ideally suited for large-scale terrestrial applications. The present efficiency of a-Si alloy modules is, however, much lower than the 15% stable efficiency that would lead to [ital significant] penetration of the electric utility bulk-power market. The slow progress in achieving high stabilized a-Si alloy module efficiencies may in part be attributed to the fact that only in the last few years did we emphasize stable efficiencies. A mission-focused integrated effort among the a-Si PV industry, universities, and the National Renewable Energy Laboratory (NREL) wouldmore » help. To foster research integration, NREL has established four research teams with significant industry participation. In the 11 months since the research team formation, a close interaction among the a-Si PV industry, universities, and NREL has been achieved and has resulted in mission-directed research.« less

  13. BRAZING ALLOYS

    DOEpatents

    Donnelly, R.G.; Gilliland, R.G.; Slaughter, G.M.

    1962-02-20

    A brazing alloy is described which, in the molten state, is characterized by excellent wettability and flowability and is capable of forming a corrosion-resistant brazed joint. At least one component of said joint is graphite and the other component is a corrosion-resistant refractory metal. The brazing alloy consists essentially of 40 to 90 wt % of gold, 5 to 35 wt% of nickel, and 1 to 45 wt% of tantalum. (AEC)

  14. COATED ALLOYS

    DOEpatents

    Harman, C.G.; O'Bannon, L.S.

    1958-07-15

    A coating is described for iron group metals and alloys, that is particularly suitable for use with nickel containing alloys. The coating is glassy in nature and consists of a mixture containing an alkali metal oxide, strontium oxide, and silicon oxide. When the glass coated nickel base metal is"fired'' at less than the melting point of the coating, it appears the nlckel diffuses into the vitreous coating, thus providing a closely adherent and protective cladding.

  15. Heat storage in alloy transformations

    NASA Technical Reports Server (NTRS)

    Birchenall, C. E.

    1980-01-01

    Heats of transformation of eutectic alloys were measured for many binary and ternary systems by differential scanning calorimetry and thermal analysis. Only the relatively cheap and plentiful elements Mg, Al, Si, P, Ca, Cu, Zn were considered. A method for measuring volume change during transformation was developed using x-ray absorption in a confined sample. Thermal expansion coefficients of both solid and liquid states of aluminum and of its eutectics with copper and with silicon also were determined. Preliminary evaluation of containment materials lead to the selection of silicon carbide as the initial material for study. Possible applications of alloy PCMs for heat storage in conventional and solar central power stations, small solar receivers and industrial furnace operations are under consideration.

  16. High-Temperature Alloys for Automotive Stirling Engines

    NASA Technical Reports Server (NTRS)

    Stephens, J. R.; Titran, R. H.

    1986-01-01

    Stirling engine is external-combustion engine that offers fuel economy, low emissions, low noise, and low vibrations. One of most critical areas in engine development concerns material selection for component parts. Alloys CG-27 and XF-818 identified capable of withstanding rigorous requirements of automotive Stirling engine. Alloys chosen for availability, performance, and manufacturability. Advanced iron-base alloys have potential for variety of applications, including stationary solar-power systems.

  17. Solar astronomy

    NASA Technical Reports Server (NTRS)

    Rosner, Robert; Noyes, Robert; Antiochos, Spiro K.; Canfield, Richard C.; Chupp, Edward L.; Deming, Drake; Doschek, George A.; Dulk, George A.; Foukal, Peter V.; Gilliland, Ronald L.

    1991-01-01

    An overview is given of modern solar physics. Topics covered include the solar interior, the solar surface, the solar atmosphere, the Large Earth-based Solar Telescope (LEST), the Orbiting Solar Laboratory, the High Energy Solar Physics mission, the Space Exploration Initiative, solar-terrestrial physics, and adaptive optics. Policy and related programmatic recommendations are given for university research and education, facilitating solar research, and integrated support for solar research.

  18. Tin induced a-Si crystallization in thin films of Si-Sn alloys

    NASA Astrophysics Data System (ADS)

    Neimash, V.; Poroshin, V.; Shepeliavyi, P.; Yukhymchuk, V.; Melnyk, V.; Kuzmich, A.; Makara, V.; Goushcha, A. O.

    2013-12-01

    Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (2-4 nm in size) in the amorphous matrix of Si1-xSnx, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300 °C. The aggregate volume of nanocrystals in the deposited film of Si1-xSnx exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ˜80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer.

  19. Grindability of cast Ti-Cu alloys.

    PubMed

    Kikuchi, Masafumi; Takada, Yukyo; Kiyosue, Seigo; Yoda, Masanobu; Woldu, Margaret; Cai, Zhuo; Okuno, Osamu; Okabe, Toru

    2003-07-01

    The purpose of the present study was to evaluate the grindability of a series of cast Ti-Cu alloys in order to develop a titanium alloy with better grindability than commercially pure titanium (CP Ti), which is considered to be one of the most difficult metals to machine. Experimental Ti-Cu alloys (0.5, 1.0, 2.0, 5.0, and 10.0 mass% Cu) were made in an argon-arc melting furnace. Each alloy was cast into a magnesia mold using a centrifugal casting machine. Cast alloy slabs (3.5 mm x 8.5 mm x 30.5 mm), from which the hardened surface layer (250 microm) was removed, were ground using a SiC abrasive wheel on an electric handpiece at four circumferential speeds (500, 750, 1000, or 1250 m/min) at 0.98 N (100 gf). Grindability was evaluated by measuring the amount of metal volume removed after grinding for 1min. Data were compared to those for CP Ti and Ti-6Al-4V. For all speeds, Ti-10% Cu alloy exhibited the highest grindability. For the Ti-Cu alloys with a Cu content of 2% or less, the highest grindability corresponded to an intermediate speed. It was observed that the grindability increased with an increase in the Cu concentration compared to CP Ti, particularly for the 5 or 10% Cu alloys at a circumferential speed of 1000 m/min or above. By alloying with copper, the cast titanium exhibited better grindability at high speed. The continuous precipitation of Ti(2)Cu among the alpha-matrix grains made this material less ductile and facilitated more effective grinding because small broken segments more readily formed.

  20. Machinability of cast commercial titanium alloys.

    PubMed

    Watanabe, I; Kiyosue, S; Ohkubo, C; Aoki, T; Okabe, T

    2002-01-01

    This study investigated the machinability of cast orthopedic titanium (metastable beta) alloys for possible application to dentistry and compared the results with those of cast CP Ti, Ti-6Al-4V, and Ti-6Al-7Nb, which are currently used in dentistry. Machinability was determined as the amount of metal removed with the use of an electric handpiece and a SiC abrasive wheel turning at four different rotational wheel speeds. The ratios of the amount of metal removed and the wheel volume loss (machining ratio) were also evaluated. Based on these two criteria, the two alpha + beta alloys tested generally exhibited better results for most of the wheel speeds compared to all the other metals tested. The machinability of the three beta alloys employed was similar or worse, depending on the speed of the wheel, compared to CP Ti. Copyright 2002 Wiley Periodicals, Inc.

  1. A-Si Photoreceptors At The Threshold Of Industrial Application

    NASA Astrophysics Data System (ADS)

    Senske, W.; Marschall, N.

    1986-03-01

    A-Si has become an attractive alternative for conventional electrophotographic photoreceptors. A-Si photoreceptors have been prepared by other laboratories by plasma deposition with blocking and protection layers. These photoreceptors are highly photosensitive and show low fatigue. Using sputtering we have shown that this technique is capable of produc-ing films with high charge acceptance. The increase of the deposition rate is presently un-der intensive investigation. High rates can be achieved by a higher degree of silane decomposition or by magnetron sputtering together with a higher power level. Deposition rates of more than 20 pm/h have been obtained by both techniques.

  2. Effect of Silicon in U-10Mo Alloy

    SciTech Connect

    Kautz, Elizabeth J.; Devaraj, Arun; Kovarik, Libor

    2017-08-31

    This document details a method for evaluating the effect of silicon impurity content on U-10Mo alloys. Silicon concentration in U-10Mo alloys has been shown to impact the following: volume fraction of precipitate phases, effective density of the final alloy, and 235-U enrichment in the gamma-UMo matrix. This report presents a model for calculating these quantities as a function of Silicon concentration, which along with fuel foil characterization data, will serve as a reference for quality control of the U-10Mo final alloy Si content. Additionally, detailed characterization using scanning electron microscope imaging, transmission electron microscope diffraction, and atom probe tomography showedmore » that Silicon impurities present in U-10Mo alloys form a Si-rich precipitate phase.« less

  3. A new lightweight solar cell

    NASA Technical Reports Server (NTRS)

    Lindmayer, J.; Wrigley, C.

    1976-01-01

    Highly reproducible, very thin (40-80 microns thick) silicon solar cells are examined. These cells are the product of silicon thinning techniques that produce very flexible, resilient slices as compared to other techniques. Measurements on solar cells 2 cm by 2 cm by 50 microns thick producing 60 mW or more at AM0 are described. These cells have fine-line metallizations, tantalum oxide antireflection coatings and back-surface aluminum alloy.

  4. Absorptive coating for aluminum solar panels

    NASA Technical Reports Server (NTRS)

    Desmet, D.; Jason, A.; Parr, A.

    1979-01-01

    Method for coating forming coating of copper oxide from copper component of sheet aluminum/copper alloy provides strong durable solar heat collector panels. Copper oxide coating has solar absorption characteristics similar to black chrome and is much simpler and less costly to produce.

  5. Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique

    DOEpatents

    Wang, Qi; Iwaniczko, Eugene

    2006-10-17

    A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.

  6. Solar Cell Modules With Improved Backskin

    DOEpatents

    Gonsiorawski, Ronald C.

    2003-12-09

    A laminated solar cell module comprises a front light transmitting support, a plurality of interconnected solar cells encapsulated by a light-transmitting encapsulant material, and an improved backskin formed of an ionomer/nylon alloy. The improved backskin has a toughness and melting point temperature sufficiently great to avoid any likelihood of it being pierced by any of the components that interconnect the solar cells.

  7. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

    PubMed

    Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

    2015-01-01

    In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

  8. Thin film solar energy collector

    DOEpatents

    Aykan, Kamran; Farrauto, Robert J.; Jefferson, Clinton F.; Lanam, Richard D.

    1983-11-22

    A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

  9. Simulation of a high-efficiency silicon-based heterojunction solar cell

    NASA Astrophysics Data System (ADS)

    Jian, Liu; Shihua, Huang; Lü, He

    2015-04-01

    The basic parameters of a-Si:H/c-Si heterojunction solar cells, such as layer thickness, doping concentration, a-Si:H/c-Si interface defect density, and the work functions of the transparent conducting oxide (TCO) and back surface field (BSF) layer, are crucial factors that influence the carrier transport properties and the efficiency of the solar cells. The correlations between the carrier transport properties and these parameters and the performance of a-Si:H/c-Si heterojunction solar cells were investigated using the AFORS-HET program. Through the analysis and optimization of a TCO/n-a-Si:H/i-a-Si:H/p-c-Si/p+-a-Si:H/Ag solar cell, a photoelectric conversion efficiency of 27.07% (VOC) 749 mV, JSC: 42.86 mA/cm2, FF: 84.33%) was obtained through simulation. An in-depth understanding of the transport properties can help to improve the efficiency of a-Si:H/c-Si heterojunction solar cells, and provide useful guidance for actual heterojunction with intrinsic thin layer (HIT) solar cell manufacturing. Project supported by the National Natural Science Foundation of China (No. 61076055), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. FDS-KL2011-04), the Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012), and the Zhejiang Provincial Key Laboratory (No. 2013E10022).

  10. Alloy softening in binary molybdenum alloys

    NASA Technical Reports Server (NTRS)

    Stephens, J. R.; Witzke, W. R.

    1972-01-01

    An investigation was conducted to determine the effects of alloy additions of Hf, Ta, W, Re, Os, Ir, and Pt on the hardness of Mo. Special emphasis was placed on alloy softening in these binary Mo alloys. Results showed that alloy softening was produced by those elements having an excess of s+d electrons compared to Mo, while those elements having an equal number or fewer s+d electrons than Mo failed to produce alloy softening. Alloy softening and hardening can be correlated with the difference in number of s+d electrons of the solute element and Mo.

  11. The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

    NASA Astrophysics Data System (ADS)

    Sritharathikhun, Jaran; Inthisang, Sorapong; Krajangsang, Taweewat; Krudtad, Patipan; Jaroensathainchok, Suttinan; Hongsingtong, Aswin; Limmanee, Amornrat; Sriprapha, Kobsak

    2016-12-01

    Hydrogenated amorphous silicon oxide (a-Si1-xOx:H) film was used as a buffer layer at the p-layer (μc-Si1-xOx:H)/i-layer (a-Si1-xGex:H) interface for a narrow band gap hydrogenated amorphous silicon germanium (a-Si1-xGex:H) single-junction solar cell. The a-Si1-xOx:H film was deposited by plasma enhanced chemical vapor deposition (PECVD) at 40 MHz in a same processing chamber as depositing the p-type layer. An optimization of the thickness of the a-Si1-xOx:H buffer layer and the CO2/SiH4 ratio was performed in the fabrication of the a-Si1-xGex:H single junction solar cells. By using the wide band gap a-Si1-xOx:H buffer layer with optimum thickness and CO2/SiH4 ratio, the solar cells showed an improvement in the open-circuit voltage (Voc), fill factor (FF), and short circuit current density (Jsc), compared with the solar cells fabricated using the conventional a-Si:H buffer layer. The experimental results indicated the excellent potential of the wide-gap a-Si1-xOx:H buffer layers for narrow band gap a-Si1-xGex:H single junction solar cells.

  12. The effect of Ge precursor on the heteroepitaxy of Ge1-x Sn x epilayers on a Si (001) substrate

    NASA Astrophysics Data System (ADS)

    Jahandar, Pedram; Weisshaupt, David; Colston, Gerard; Allred, Phil; Schulze, Jorg; Myronov, Maksym

    2018-03-01

    The heteroepitaxial growth of Ge1-x Sn x on a Si (001) substrate, via a relaxed Ge buffer, has been studied using two commonly available commercial Ge precursors, Germane (GeH4) and Digermane (Ge2H6), by means of chemical vapour deposition at reduced pressures (RP-CVD). Both precursors demonstrate growth of strained and relaxed Ge1-x Sn x epilayers, however Sn incorporation is significantly higher when using the more reactive Ge2H6 precursor. As Ge2H6 is significantly more expensive, difficult to handle or store than GeH4, developing high Sn content epilayers using the latter precursor is of great interest. This study demonstrates the key differences between the two precursors and offers routes to process optimisation which will enable high Sn content alloys at relatively low cost.

  13. Accelerated stress testing of amorphous silicon solar cells

    NASA Technical Reports Server (NTRS)

    Stoddard, W. G.; Davis, C. W.; Lathrop, J. W.

    1985-01-01

    A technique for performing accelerated stress tests of large-area thin a-Si solar cells is presented. A computer-controlled short-interval test system employing low-cost ac-powered ELH illumination and a simulated a-Si reference cell (seven individually bandpass-filtered zero-biased crystalline PIN photodiodes) calibrated to the response of an a-Si control cell is described and illustrated with flow diagrams, drawings, and graphs. Preliminary results indicate that while most tests of a program developed for c-Si cells are applicable to a-Si cells, spurious degradation may appear in a-Si cells tested at temperatures above 130 C.

  14. Solar Cookers.

    ERIC Educational Resources Information Center

    King, Richard C.

    1981-01-01

    Describes the use of solar cookers in the science classroom. Includes instructions for construction of a solar cooker, an explanation of how solar cookers work, and a number of suggested activities. (DS)

  15. Metal alloy identifier

    DOEpatents

    Riley, William D.; Brown, Jr., Robert D.

    1987-01-01

    To identify the composition of a metal alloy, sparks generated from the alloy are optically observed and spectrographically analyzed. The spectrographic data, in the form of a full-spectrum plot of intensity versus wavelength, provide the "signature" of the metal alloy. This signature can be compared with similar plots for alloys of known composition to establish the unknown composition by a positive match with a known alloy. An alternative method is to form intensity ratios for pairs of predetermined wavelengths within the observed spectrum and to then compare the values of such ratios with similar values for known alloy compositions, thereby to positively identify the unknown alloy composition.

  16. Substrate for thin silicon solar cells

    DOEpatents

    Ciszek, Theodore F.

    1995-01-01

    A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

  17. Substrate for thin silicon solar cells

    DOEpatents

    Ciszek, T.F.

    1995-03-28

    A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.

  18. Use of a Si(Li) detector as β spectrometer.

    PubMed

    Dryák, P; Kovář, P

    2014-05-01

    The aim of this work is to demonstrate the capability of a Si(Li) detector for the measurement of β spectra, despite the energy absorption in air and in the Be window. A simple source holder fixes the source on the symmetry axis at 3mm from the detector window. The β-sources are produced by evaporation on a plastic backing plate. Absorbing materials between the source and the sensitive volume of the detector are 3 mm of air, a Be window, 0.1 μm Si and 20 nm of gold. A model of the detector was created for β spectra simulation using the MCNP 4A code. Experimental spectra of (14)C, (147)Pm, (204)Tl, (90)Sr/(90)Y were compared with simulated spectra. © 2013 Published by Elsevier Ltd.

  19. Solar Energy.

    ERIC Educational Resources Information Center

    Eaton, William W.

    Presented is the utilization of solar radiation as an energy resource principally for the production of electricity. Included are discussions of solar thermal conversion, photovoltic conversion, wind energy, and energy from ocean temperature differences. Future solar energy plans, the role of solar energy in plant and fossil fuel production, and…

  20. Solar energy

    NASA Technical Reports Server (NTRS)

    Rapp, D.

    1981-01-01

    The book opens with a review of the patterns of energy use and resources in the United States, and an exploration of the potential of solar energy to supply some of this energy in the future. This is followed by background material on solar geometry, solar intensities, flat plate collectors, and economics. Detailed attention is then given to a variety of solar units and systems, including domestic hot water systems, space heating systems, solar-assisted heat pumps, intermediate temperature collectors, space heating/cooling systems, concentrating collectors for high temperatures, storage systems, and solar total energy systems. Finally, rights to solar access are discussed.

  1. Robustness up to 400°C of the passivation of c-Si by p-type a-Si:H thanks to ion implantation

    NASA Astrophysics Data System (ADS)

    Defresne, A.; Plantevin, O.; Roca i Cabarrocas, Pere

    2016-12-01

    Heterojunction solar cells based on crystalline silicon (c-Si) passivated by hydrogenated amorphous silicon (a-Si:H) thin films are one of the most promising architectures for high energy conversion efficiency. Indeed, a-Si:H thin films can passivate both p-type and n-type wafers and can be deposited at low temperature (<200°C) using PECVD. However, such passivation layers, in particular p-type a-Si:H, show a dramatic degradation in passivation quality above 200°C. Yet, annealing at 300 - 400°C the TCO layer and metallic contacts is highly desirable to reduce the contact resistance as well as the TCO optical absorption. In this work, we show that as expected, ion implantation (5 - 30 keV) introduces defects at the c-Si/a-Si:H interface which strongly degrade the effective lifetime, down to a few micro-seconds. However, the passivation quality can be restored and lifetime values can be improved up to 2 ms over the initial value with annealing. We show here that effective lifetimes above 1 ms can be maintained up to 380°C, opening up the possibility for higher process temperatures in silicon heterojunction device fabrication.

  2. Solar Systems

    NASA Technical Reports Server (NTRS)

    1979-01-01

    The solar collectors shown are elements of domestic solar hot water systems produced by Solar One Ltd., Virginia Beach, Virginia. Design of these systems benefited from technical expertise provided Solar One by NASA's Langley Research Center. The company obtained a NASA technical support package describing the d e sign and operation of solar heating equipment in NASA's Tech House, a demonstration project in which aerospace and commercial building technology are combined in an energy- efficient home. Solar One received further assistance through personal contact with Langley solar experts. The company reports that the technical information provided by NASA influenced Solar One's panel design, its selection of a long-life panel coating which increases solar collection efficiency, and the method adopted for protecting solar collectors from freezing conditions.

  3. Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices Including Concepts for The Development of Polycrystalline Multijunctions: Annual Report; 24 August 1998-23 August 1999

    SciTech Connect

    Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.

    2000-08-25

    This report describes results achieved during phase 1 of a three-phase subcontract to develop and understand thin-film solar cell technology associated to CuInSe{sub 2} and related alloys, a-Si and its alloys, and CdTe. Modules based on all these thin films are promising candidates to meet DOE long-range efficiency, reliability, and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for the development of viable commercial processes and to improve module performance. The generic research issues addressed are: (1) quantitative analysis of processing steps to provide information for efficient commercial-scalemore » equipment design and operation; (2) device characterization relating the device performance to materials properties and process conditions; (3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; (4) development of improved window/heterojunction layers and contacts to improve device performance and reliability; and (5) evaluation of cell stability with respect to illumination, temperature, and ambient and with respect to device structure and module encapsulation.« less

  4. Computer analysis of microcrystalline silicon hetero-junction solar cell with lumerical FDTD/DEVICE

    NASA Astrophysics Data System (ADS)

    Riaz, Muhammad; Earles, S. K.; Kadhim, Ahmed; Azzahrani, Ahmad

    The computer analysis of tandem solar cell, c-Si/a-Si:H/μc-SiGe, is studied within Lumerical FDTD/Device 4.6. The optical characterization is performed in FDTD and then total generation rate is transported into DEVICE for electrical characterization. The electrical characterization of the solar cell is carried out in DEVICE. The design is implemented by staking three sub cells with band gap of 1.12eV, 1.50eV and 1.70eV, respectively. First, single junction solar cell with both a-Si and μc-SiGe absorbing layers are designed and compared. The thickness for both layers are kept the same. In a single junction, solar cell with a-Si absorbing layer, the fill factor and the efficiency are noticed as FF = 78.98%, and η = 6.03%. For μc-SiGe absorbing layer, the efficiency and fill factor are increased as η = 7.06% and FF = 84.27%, respectively. Second, for tandem thin film solar cell c-Si/a-Si:H/μc-SiGe, the fill factor FF = 81.91% and efficiency η = 9.84% have been noticed. The maximum efficiency for both single junction thin film solar cell c-Si/μc-SiGe and tandem solar cell c-Si/a-Si:H/μc-SiGe are improved with check board surface design for light trapping.

  5. Development of Titanium Alloy Casting Technology

    DTIC Science & Technology

    1976-08-01

    reduction in melting temperatures (Table 8). (3 0 )Smeltzer, C.E., and Compton, W.A., "Titanium Braze System for High Temperature Applications", First...Compton, W. A., "Titanium Braze System for High Temperature Applications," First Interim Technical Report, Solar Division of International Harvester Co...Microstructures of the Phase 1I Ti-13Cu Alloy (Meat 2LO56) Showing the Effect of Various Aging Treatments After High Temperature Annealing 113 xi

  6. Electronic structure of alloys

    SciTech Connect

    Ehrenreich, H.; Schwartz, L.M.

    1976-01-01

    The description of electronic properties of binary substitutional alloys within the single particle approximation is reviewed. Emphasis is placed on a didactic exposition of the equilibrium properties of the transport and magnetic properties of such alloys. Topics covered include: multiple scattering theory; the single band alloy; formal extensions of the theory; the alloy potential; realistic model state densities; the s-d model; and the muffin tin model. 43 figures, 3 tables, 151 references. (GHT)

  7. High efficiency solar cells combining a perovskite and a silicon heterojunction solar cells via an optical splitting system

    SciTech Connect

    Uzu, Hisashi, E-mail: Hisashi.Uzu@kaneka.co.jp, E-mail: npark@skku.edu; Ichikawa, Mitsuru; Hino, Masashi

    2015-01-05

    We have applied an optical splitting system in order to achieve very high conversion efficiency for a full spectrum multi-junction solar cell. This system consists of multiple solar cells with different band gap optically coupled via an “optical splitter.” An optical splitter is a multi-layered beam splitter with very high reflection in the shorter-wave-length range and very high transmission in the longer-wave-length range. By splitting the incident solar spectrum and distributing it to each solar cell, the solar energy can be managed more efficiently. We have fabricated optical splitters and used them with a wide-gap amorphous silicon (a-Si) solar cellmore » or a CH{sub 3}NH{sub 3}PbI{sub 3} perovskite solar cell as top cells, combined with mono-crystalline silicon heterojunction (HJ) solar cells as bottom cells. We have achieved with a 550 nm cutoff splitter an active area conversion efficiency of over 25% using a-Si and HJ solar cells and 28% using perovskite and HJ solar cells.« less

  8. Solar Collectors

    NASA Technical Reports Server (NTRS)

    1980-01-01

    Solar Energy's solar panels are collectors for a solar energy system which provides heating for a drive-in bank in Akron, OH. Collectors were designed and manufactured by Solar Energy Products, a firm established by three former NASA employees. Company President, Frank Rom, an example of a personnel-type technology transfer, was a Research Director at Lewis Research Center, which conducts extensive solar heating and cooling research, including development and testing of high-efficiency flat-plate collectors. Rom acquired solar energy expertise which helped the company develop two types of collectors, one for use in domestic/commercial heating systems and the other for drying grain.

  9. Growth and characterization of low composition Ge, x in epi-Si1‑x Gex (x  ⩽  10%) active layer for fabrication of hydrogenated bottom solar cell

    NASA Astrophysics Data System (ADS)

    Ajmal Khan, M.; Sato, R.; Sawano, K.; Sichanugrist, P.; Lukianov, A.; Ishikawa, Y.

    2018-05-01

    Semiconducting epi-Si1‑x Ge x alloys have promising features as solar cell materials and may be equally important for some other semiconductor device applications. Variation of the germanium compositional, x in epi-Si1‑x Ge x , makes it possible to control the bandgap between 1.12 eV and 0.68 eV for application in bottom solar cells. A low proportion of Ge in SiGe alloy can be used for photovoltaic application in a bottom cell to complete the four-terminal tandem structure with wide bandgap materials. In this research, we aimed to use a low proportion of Ge—about 10%—in strained or relaxed c-Si1‑x Ge x /c-Si heterojunctions (HETs), with or without insertion of a Si buffer layer grown by molecular beam epitaxy, to investigate the influence of the relaxed or strained SiGe active layer on the performance of HET solar cells grown using the plasma enhanced chemical vapor deposition system. Thanks to the c-Si buffer layer at the hetero-interface, the efficiency of these SiGe based HET solar cells was improved from 2.3% to 3.5% (fully strained and with buffer layer). The Jsc was improved, from 8 mA cm‑2 to 15.46 mA cm‑2, which might be supported by strained c-Si buffer layer at the hetero-interface, by improving the crystalline quality.

  10. High temperature alloy

    NASA Technical Reports Server (NTRS)

    Frank, R. G.; Semmel, J. W., Jr.

    1968-01-01

    Molybdenum is substituted for tungsten on an atomic basis in a cobalt-based alloy, S-1, thus enabling the alloy to be formed into various mill products, such as tubing and steels. The alloy is weldable, has good high temperature strength and is not subject to embrittlement produced by high temperature aging.

  11. SUPERCONDUCTING VANADIUM BASE ALLOY

    DOEpatents

    Cleary, H.J.

    1958-10-21

    A new vanadium-base alloy which possesses remarkable superconducting properties is presented. The alloy consists of approximately one atomic percent of palladium, the balance being vanadium. The alloy is stated to be useful in a cryotron in digital computer circuits.

  12. DELTA PHASE PLUTONIUM ALLOYS

    DOEpatents

    Cramer, E.M.; Ellinger, F.H.; Land. C.C.

    1960-03-22

    Delta-phase plutonium alloys were developed suitable for use as reactor fuels. The alloys consist of from 1 to 4 at.% zinc and the balance plutonium. The alloys have good neutronic, corrosion, and fabrication characteristics snd possess good dimensional characteristics throughout an operating temperature range from 300 to 490 deg C.

  13. PLUTONIUM-THORIUM ALLOYS

    DOEpatents

    Schonfeld, F.W.

    1959-09-15

    New plutonium-base binary alloys useful as liquid reactor fuel are described. The alloys consist of 50 to 98 at.% thorium with the remainder plutonium. The stated advantages of these alloys over unalloyed plutonium for reactor fuel use are easy fabrication, phase stability, and the accompanying advantuge of providing a means for converting Th/sup 232/ into U/sup 233/.

  14. Effects of the c-Si/a-SiO2 interfacial atomic structure on its band alignment: an ab initio study.

    PubMed

    Zheng, Fan; Pham, Hieu H; Wang, Lin-Wang

    2017-12-13

    The crystalline-Si/amorphous-SiO 2 (c-Si/a-SiO 2 ) interface is an important system used in many applications, ranging from transistors to solar cells. The transition region of the c-Si/a-SiO 2 interface plays a critical role in determining the band alignment between the two regions. However, the question of how this interface band offset is affected by the transition region thickness and its local atomic arrangement is yet to be fully investigated. Here, by controlling the parameters of the classical Monte Carlo bond switching algorithm, we have generated the atomic structures of the interfaces with various thicknesses, as well as containing Si at different oxidation states. A hybrid functional method, as shown by our calculations to reproduce the GW and experimental results for bulk Si and SiO 2 , was used to calculate the electronic structure of the heterojunction. This allowed us to study the correlation between the interface band characterization and its atomic structures. We found that although the systems with different thicknesses showed quite different atomic structures near the transition region, the calculated band offset tended to be the same, unaffected by the details of the interfacial structure. Our band offset calculation agrees well with the experimental measurements. This robustness of the interfacial electronic structure to its interfacial atomic details could be another reason for the success of the c-Si/a-SiO 2 interface in Si-based electronic applications. Nevertheless, when a reactive force field is used to generate the a-SiO 2 and c-Si/a-SiO 2 interfaces, the band offset significantly deviates from the experimental values by about 1 eV.

  15. Effects of the c-Si/a-SiO 2 interfacial atomic structure on its band alignment: an ab initio study

    SciTech Connect

    Zheng, Fan; Pham, Hieu H.; Wang, Lin-Wang

    The crystalline-Si/amorphous-SiO 2 (c-Si/a-SiO 2) interface is an important system used in many applications, ranging from transistors to solar cells. The transition region of the c-Si/a-SiO 2 interface plays a critical role in determining the band alignment between the two regions. However, the question of how this interface band offset is affected by the transition region thickness and its local atomic arrangement is yet to be fully investigated. Here in this study, by controlling the parameters of the classical Monte Carlo bond switching algorithm, we have generated the atomic structures of the interfaces with various thicknesses, as well as containingmore » Si at different oxidation states. A hybrid functional method, as shown by our calculations to reproduce the GW and experimental results for bulk Si and SiO 2, was used to calculate the electronic structure of the heterojunction. This allowed us to study the correlation between the interface band characterization and its atomic structures. We found that although the systems with different thicknesses showed quite different atomic structures near the transition region, the calculated band offset tended to be the same, unaffected by the details of the interfacial structure. Our band offset calculation agrees well with the experimental measurements. This robustness of the interfacial electronic structure to its interfacial atomic details could be another reason for the success of the c-Si/a-SiO 2 interface in Si-based electronic applications. Nevertheless, when a reactive force field is used to generate the a-SiO 2 and c-Si/a-SiO 2 interfaces, the band offset significantly deviates from the experimental values by about 1 eV« less

  16. Effects of the c-Si/a-SiO 2 interfacial atomic structure on its band alignment: an ab initio study

    DOE PAGES

    Zheng, Fan; Pham, Hieu H.; Wang, Lin-Wang

    2017-11-13

    The crystalline-Si/amorphous-SiO 2 (c-Si/a-SiO 2) interface is an important system used in many applications, ranging from transistors to solar cells. The transition region of the c-Si/a-SiO 2 interface plays a critical role in determining the band alignment between the two regions. However, the question of how this interface band offset is affected by the transition region thickness and its local atomic arrangement is yet to be fully investigated. Here in this study, by controlling the parameters of the classical Monte Carlo bond switching algorithm, we have generated the atomic structures of the interfaces with various thicknesses, as well as containingmore » Si at different oxidation states. A hybrid functional method, as shown by our calculations to reproduce the GW and experimental results for bulk Si and SiO 2, was used to calculate the electronic structure of the heterojunction. This allowed us to study the correlation between the interface band characterization and its atomic structures. We found that although the systems with different thicknesses showed quite different atomic structures near the transition region, the calculated band offset tended to be the same, unaffected by the details of the interfacial structure. Our band offset calculation agrees well with the experimental measurements. This robustness of the interfacial electronic structure to its interfacial atomic details could be another reason for the success of the c-Si/a-SiO 2 interface in Si-based electronic applications. Nevertheless, when a reactive force field is used to generate the a-SiO 2 and c-Si/a-SiO 2 interfaces, the band offset significantly deviates from the experimental values by about 1 eV« less

  17. Present Status and Future Prospects of Silicon Thin-Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Konagai, Makoto

    2011-03-01

    In this report, an overview of the recent status of photovoltaic (PV) power generation is first presented from the viewpoint of reducing CO2 emission. Next, the Japanese roadmap for the research and development (R&D) of PV power generation and the progress in the development of various solar cells are explained. In addition, the present status and future prospects of amorphous silicon (a-Si) thin-film solar cells, which are expected to enter the stage of full-scale practical application in the near future, are described. For a-Si single-junction solar cells, the conversion efficiency of their large-area modules has now reached 6-8%, and their practical application to megawatt solar systems has started. Meanwhile, the focus of R&D has been shifting to a-Si and microcrystalline silicon (µc-Si) tandem solar cells. Thus far, a-Si/µc-Si tandem solar cell modules with conversion efficiency exceeding 13% have been reported. In addition, triple-junction solar cells, whose target year for practical application is 2025 or later, are introduced, as well as innovative thin-film full-spectrum solar cells, whose target year of realization is 2050.

  18. Solar Geometry

    Atmospheric Science Data Center

    2014-09-25

    Solar Noon (GMT time) The time when the sun is due south in the northern hemisphere or due north in the southern ... The average cosine of the angle between the sun and directly overhead during daylight hours.   Cosine solar ...

  19. High strength alloys

    DOEpatents

    Maziasz, Phillip James; Shingledecker, John Paul; Santella, Michael Leonard; Schneibel, Joachim Hugo; Sikka, Vinod Kumar; Vinegar, Harold J.; John, Randy Carl; Kim, Dong Sub

    2012-06-05

    High strength metal alloys are described herein. At least one composition of a metal alloy includes chromium, nickel, copper, manganese, silicon, niobium, tungsten and iron. System, methods, and heaters that include the high strength metal alloys are described herein. At least one heater system may include a canister at least partially made from material containing at least one of the metal alloys. At least one system for heating a subterranean formation may include a tublar that is at least partially made from a material containing at least one of the metal alloys.

  20. High strength alloys

    DOEpatents

    Maziasz, Phillip James [Oak Ridge, TN; Shingledecker, John Paul [Knoxville, TN; Santella, Michael Leonard [Knoxville, TN; Schneibel, Joachim Hugo [Knoxville, TN; Sikka, Vinod Kumar [Oak Ridge, TN; Vinegar, Harold J [Bellaire, TX; John, Randy Carl [Houston, TX; Kim, Dong Sub [Sugar Land, TX

    2010-08-31

    High strength metal alloys are described herein. At least one composition of a metal alloy includes chromium, nickel, copper, manganese, silicon, niobium, tungsten and iron. System, methods, and heaters that include the high strength metal alloys are described herein. At least one heater system may include a canister at least partially made from material containing at least one of the metal alloys. At least one system for heating a subterranean formation may include a tubular that is at least partially made from a material containing at least one of the metal alloys.

  1. Study of p-type and intrinsic materials for amorphous silicon based solar cells

    NASA Astrophysics Data System (ADS)

    Du, Wenhui

    This dissertation summarizes the research work on the investigation and optimization of high efficiency hydrogenated amorphous silicon (a-Si:H) based thin film n-i-p single-junction and multi-junction solar cells, deposited using radio frequency (RF) and very high frequency (VHF) plasma enhanced chemical vapor deposition (PECVD) techniques. The fabrication and characterization of high quality p-type and intrinsic materials for a-Si:H based solar cells have been systematically and intensively studied. Hydrogen dilution, substrate temperature, gas flow rate, RF- or VHF-power density, and films deposition time have been optimized to obtain "on-the-edge" materials. To understand the material structure of the silicon p-layer providing a high Voc a-Si:H solar cell, hydrogenated amorphous, protocrystalline, and nanocrystalline silicon p-layers have been prepared using RF-PECVD and characterized by Raman spectroscopy and high resolution transmission electronic microscopy (HRTEM). It was found that the optimum Si:H p-layer for n-i-p a-Si:H solar cells is composed of fine-grained nanocrystals with crystallite sizes in the range of 3-5 nm embedded in an amorphous network. Using the optimized p-layer, an a-Si:H single-junction solar cell with a very high Voc value of 1.042 V and a FF value of 0.74 has been obtained. a-Si:H, a-SiGe:H and nc-Si:H i-layers have been prepared using RF- and VHF-PECVD techniques and monitored by different optical and electrical characterizations. Single-junction a-Si:H, a-SiGe and nc-Si:H cells have been developed and optimized. Intermediate bandgap a-SiGe:H solar cells achieved efficiencies over 12.5%. On the basis of optimized component cells, we achieved a-Si:Hla-SiGe:H tandem solar cells with efficiencies of ˜12.9% and a-Si:H/a-SiGe:H/a-SiGe:H triple-junction cells with efficiencies of ˜12.03%. VHF-PECVD technique was used to increase the deposition rates of the narrow bandgap materials. The deposition rate for a-SiGe:H i-layer attained 9 A

  2. Solar Equipment

    NASA Technical Reports Server (NTRS)

    1983-01-01

    A medical refrigeration and a water pump both powered by solar cells that convert sunlight directly into electricity are among the line of solar powered equipment manufactured by IUS (Independent Utility Systems) for use in areas where conventional power is not available. IUS benefited from NASA technology incorporated in the solar panel design and from assistance provided by Kerr Industrial Applications Center.

  3. Solar Eclipse

    Atmospheric Science Data Center

    2013-04-19

    ... June 10, 2002 the Moon obscured the central portion of the solar disk in a phenomenon known as an annular solar eclipse. Partial phases of ... to obscure about 75 percent of the solar disk. The two scenes are geolocated to adjacent paths within World Reference System-2. ...

  4. Structural, optical, and spin properties of hydrogenated amorphous silicon-germanium alloys

    NASA Astrophysics Data System (ADS)

    Stutzmann, M.; Street, R. A.; Tsai, C. C.; Boyce, J. B.; Ready, S. E.

    1989-07-01

    We report on a detailed study of structural and electronic properties of hydrogenated amorphous silicon-germanium alloys deposited by rf glow discharge from SiH4 and GeH4 in a diode reactor. The chemical composition of the alloys is related to the deposition conditions, with special emphasis on preferential incorporation of Ge into the solid phase and on the role of inert dilutant gases. Hydrogen bonding in the alloys is investigated with nuclear magnetic resonance and vibrational (Raman and infrared) spectroscopy. The optical properties of a-SiGe:H samples deposited under optimal conditions are analyzed with the help of subgap absorption measurements and band-tail luminescence for the entire range of alloy composi-tions. A large part of the article describes an investigation of the electron-spin-resonance response of undoped alloys. The spin density associated with dangling bond defects localized on Si and Ge atoms has been measured as a function of alloy composition for optimized material. In addition, the dependence of the two defect densities on the detailed deposition conditions (rf power, substrate temperature, and dilution) has been determined in a systematic way for alloys deposited from a plasma with a fixed SiH4/GeH4ratio. The results of this study, especially the preferential creation of Ge dangling bonds, are discussed in the context of our structural data. Furthermore, spin resonance is employed to investigate the light-induced degradation (Staebler-Wronski effect) of a-SiGe:H. Finally, the changes of the spin-resonance spectra of a-Si0.7 Ge0.3 :H upon substitutional doping with phosphorus and boron have been obtained experimentally, and are used to construct a model for the electronic density of states in this material.

  5. Solar flair.

    PubMed Central

    Manuel, John S

    2003-01-01

    Design innovations and government-sponsored financial incentives are making solar energy increasingly attractive to homeowners and institutional customers such as school districts. In particular, the passive solar design concept of daylighting is gaining favor among educators due to evidence of improved performance by students working in daylit classrooms. Electricity-generating photovoltaic systems are also becoming more popular, especially in states such as California that have high electric rates and frequent power shortages. To help spread the word about solar power, the U.S. Department of Energy staged its first-ever Solar Decathlon in October 2002. This event featured solar-savvy homes designed by 14 college teams. PMID:12573926

  6. Solar Newsletter | Solar Research | NREL

    Science.gov Websites

    , General Electric Optimize Voltage Control for Utility-Scale PV As utilities increasingly add solar power components that may be used to integrate distributed solar PV onto distribution systems. More than 335 data Innovation Award for Grid Reliability PV Demonstration First Solar, the California Independent System

  7. Solar Energy: Solar System Economics.

    ERIC Educational Resources Information Center

    Knapp, Henry H., III

    This module on solar system economics is one of six in a series intended for use as supplements to currently available materials on solar energy and energy conservation. Together with the recommended texts and references (sources are identified), these modules provide an effective introduction to energy conservation and solar energy technologies.…

  8. Solar Sailing

    NASA Technical Reports Server (NTRS)

    Johnson, Les

    2009-01-01

    Solar sailing is a topic of growing technical and popular interest. Solar sail propulsion will make space exploration more affordable and offer access to destinations within (and beyond) the solar system that are currently beyond our technical reach. The lecture will describe solar sails, how they work, and what they will be used for in the exploration of space. It will include a discussion of current plans for solar sails and how advanced technology, such as nanotechnology, might enhance their performance. Much has been accomplished recently to make solar sail technology very close to becoming an engineering reality and it will soon be used by the world s space agencies in the exploration of the solar system and beyond. The first part of the lecture will summarize state-of-the-art space propulsion systems and technologies. Though these other technologies are the key to any deep space exploration by humans, robots, or both, solar-sail propulsion will make space exploration more affordable and offer access to distant and difficult destinations. The second part of the lecture will describe the fundamentals of space solar sail propulsion and will describe the near-, mid- and far-term missions that might use solar sails as a propulsion system. The third part of the lecture will describe solar sail technology and the construction of current and future sailcraft, including the work of both government and private space organizations.

  9. Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers

    NASA Astrophysics Data System (ADS)

    Chagarov, Evgueni A.; Kavrik, Mahmut S.; Fang, Ziwei; Tsai, Wilman; Kummel, Andrew C.

    2018-06-01

    Comprehensive Density-Functional Theory (DFT) Molecular Dynamics (MD) simulations were performed to investigate interfaces between a-HfO2 and SiGe or Ge semiconductors with fully-stoichiometric a-SiO2 or sub-oxide SiO interlayers. The electronic structure of the selected stacks was calculated with a HSE06 hybrid functional. Simulations were performed before and after hydrogen passivation of residual interlayer defects. For the SiGe substrate with Ge termination prior to H passivation, the stacks with a-SiO suboxide interlayer (a-HfO2/a-SiO/SiGe) demonstrate superior electronic properties and wider band-gaps than the stacks with fully coordinated a-SiO2 interlayers (a-HfO2/a-SiO2/SiGe). After H passivation, most of the a-HfO2/a-SiO2/SiGe defects are passivated. To investigate effect of random placement of Si and Ge atoms additional simulations with a randomized SiGe slab were performed demonstrating improvement of electronic structure. For Ge substrates, before H passivation, the stacks with a SiO suboxide interlayer (a-HfO2/a-SiO/Ge) also demonstrate wider band-gaps than the stacks with fully coordinated a-SiO2 interlayers (a-HfO2/a-SiO2/Ge). However, even for a-HfO2/a-SiO/Ge, the Fermi level is shifted close to the conduction band edge (CBM) consistent with Fermi level pinning. Again, after H passivation, most of the a-HfO2/a-SiO2/Ge defects are passivated. The stacks with fully coordinated a-SiO2 interlayers have much stronger deformation and irregularity in the semiconductor (SiGe or Ge) upper layers leading to multiple under-coordinated atoms which create band-edge states and decrease the band-gap prior to H passivation.

  10. Advanced Cast Aluminum Alloys

    DTIC Science & Technology

    2009-02-01

    This production route has demonstrated that aluminum alloys with yield strengths in excess of 690 MPa with good elongation (reportedly 8%) are...series of aluminum alloys have poor-to-fair general corrosion resistance and poor-to-good stress corrosion cracking resistance. Wrought 2519...aluminum alloy has good strength, good ballistic performance, good stress corrosion cracking resistance but only fair general corrosion resistance

  11. Amorphous metal alloy

    DOEpatents

    Wang, R.; Merz, M.D.

    1980-04-09

    Amorphous metal alloys of the iron-chromium and nickel-chromium type have excellent corrosion resistance and high temperature stability and are suitable for use as a protective coating on less corrosion resistant substrates. The alloys are stabilized in the amorphous state by one or more elements of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten. The alloy is preferably prepared by sputter deposition.

  12. PLUTONIUM-ZIRCONIUM ALLOYS

    DOEpatents

    Schonfeld, F.W.; Waber, J.T.

    1960-08-30

    A series of nuclear reactor fuel alloys consisting of from about 5 to about 50 at.% zirconium (or higher zirconium alloys such as Zircaloy), balance plutonium, and having the structural composition of a plutonium are described. Zirconium is a satisfactory diluent because it alloys readily with plutonium and has desirable nuclear properties. Additional advantages are corrosion resistance, excellent fabrication propenties, an isotropie structure, and initial softness.

  13. Low activation ferritic alloys

    DOEpatents

    Gelles, David S.; Ghoniem, Nasr M.; Powell, Roger W.

    1986-01-01

    Low activation ferritic alloys, specifically bainitic and martensitic stainless steels, are described for use in the production of structural components for nuclear fusion reactors. They are designed specifically to achieve low activation characteristics suitable for efficient waste disposal. The alloys essentially exclude molybdenum, nickel, nitrogen and niobium. Strength is achieved by substituting vanadium, tungsten, and/or tantalum in place of the usual molybdenum content in such alloys.

  14. Low activation ferritic alloys

    DOEpatents

    Gelles, D.S.; Ghoniem, N.M.; Powell, R.W.

    1985-02-07

    Low activation ferritic alloys, specifically bainitic and martensitic stainless steels, are described for use in the production of structural components for nuclear fusion reactors. They are designed specifically to achieve low activation characteristics suitable for efficient waste disposal. The alloys essentially exclude molybdenum, nickel, nitrogen and niobium. Strength is achieved by substituting vanadium, tungsten, and/or tantalum in place of the usual molybdenum content in such alloys.

  15. Thermodynamics of Alloys: Studies of Nickel-Gallium, Nickel-Germanium and Nickel-Rhodium Alloys.

    DTIC Science & Technology

    NICKEL ALLOYS, *GALLIUM ALLOYS, *GERMANIUM ALLOYS, * RHODIUM ALLOYS, *PHASE STUDIES, THERMODYNAMICS, INTERMETALLIC COMPOUNDS, FREE ENERGY, ENTROPY, HEAT OF FORMATION, CRYSTAL STRUCTURE, UNITED KINGDOM.

  16. NICKEL-BASE ALLOY

    DOEpatents

    Inouye, H.; Manly, W.D.; Roche, T.K.

    1960-01-19

    A nickel-base alloy was developed which is particularly useful for the containment of molten fluoride salts in reactors. The alloy is resistant to both salt corrosion and oxidation and may be used at temperatures as high as 1800 deg F. Basically, the alloy consists of 15 to 22 wt.% molybdenum, a small amount of carbon, and 6 to 8 wt.% chromium, the balance being nickel. Up to 4 wt.% of tungsten, tantalum, vanadium, or niobium may be added to strengthen the alloy.

  17. Solar concentrator

    SciTech Connect

    Melchior, B.

    1984-04-03

    A solar concentrator comprises a solid block of a transparent material having a planar incident surface positioned to receive solar rays and, opposite this surface, a curved reflective surface so that the material of the block completely fills the space between these surfaces. At the incident surface an absorber is provided and the curvature of the reflective surface is such that it is at least partly parabolical and adapted to reflect solar rays traversing the body through the body again to the absorber.

  18. Characterization of rodlike structures in Si-Ge-GaP alloys

    NASA Astrophysics Data System (ADS)

    Srikant, V.; Jesser, W. A.; Rosi, F. D.

    1996-07-01

    High-temperature microstructure of Si-Ge alloys containing 10-15 mole % GaP were studied. Quenching the 80/20 Si-Ge alloy (80 at. % Si) from above 1125 °C and the 50/50 Si-Ge alloy (50 at. % Si) from above 1025 °C resulted in a duplex microstructure. The two-phase regions consisted of a regular array of rodlike structures (GaP) in a Si-Ge matrix whereas the monophase regions were pure Si-Ge. These rodlike structures were found to lie along the [001] direction and result in {002} spots in a [100] electron diffraction pattern. The ``rods'' were about 35 and 45 nm in diameter in the case of the 80/20 and 50/50 alloy, respectively. These structures are not stable on annealing and do not form when the solidification rate is decreased.

  19. Corrosion resistance and cytocompatibility of biodegradable surgical magnesium alloy coated with hydrogenated amorphous silicon.

    PubMed

    Xin, Yunchang; Jiang, Jiang; Huo, Kaifu; Tang, Guoyi; Tian, Xiubo; Chu, Paul K

    2009-06-01

    The fast degradation rates in the physiological environment constitute the main limitation for the applications of surgical magnesium alloys as biodegradable hard-tissue implants. In this work, a stable and dense hydrogenated amorphous silicon coating (a-Si:H) with desirable bioactivity is deposited on AZ91 magnesium alloy using magnetron sputtering deposition. Raman spectroscopy and Fourier transform infrared spectroscopy reveal that the coating is mainly composed of hydrogenated amorphous silicon. The hardness of the coated alloy is enhanced significantly and the coating is quite hydrophilic as well. Potentiodynamic polarization results show that the corrosion resistance of the coated alloy is enhanced dramatically. In addition, the deterioration process of the coating in simulated body fluids is systematically investigated by open circuit potential evolution and electrochemical impedance spectroscopy. The cytocompatibility of the coated Mg is evaluated for the first time using hFOB1.19 cells and favorable biocompatibility is observed. 2008 Wiley Periodicals, Inc.

  20. Solar Simulator

    NASA Astrophysics Data System (ADS)

    1981-01-01

    Oriel Corporation's simulators have a high pressure xenon lamp whose reflected light is processed by an optical system to produce a uniform solar beam. Because of many different types of applications, the simulators must be adjustable to replicate many different areas of the solar radiation spectrum. Simulators are laboratory tools for such purposes as testing and calibrating solar cells, or other solar energy systems, testing dyes, paints and pigments, pharmaceuticals and cosmetic preparations, plant and animal studies, food and agriculture studies and oceanographic research.

  1. Solar Physics

    NASA Technical Reports Server (NTRS)

    Wu, S. T.

    2000-01-01

    The areas of emphasis are: (1) develop theoretical models of the transient release of magnetic energy in the solar atmosphere, e.g., in solar flares, eruptive prominences, coronal mass ejections, etc.; (2) investigate the role of the Sun's magnetic field in the structuring of solar corona by the development of three-dimensional numerical models that describe the field configuration at various heights in the solar atmosphere by extrapolating the field at the photospheric level; (3) develop numerical models to investigate the physical parameters obtained by the ULYSSES mission; (4) develop numerical and theoretical models to investigate solar activity effects on the solar wind characteristics for the establishment of the solar-interplanetary transmission line; and (5) develop new instruments to measure solar magnetic fields and other features in the photosphere, chromosphere transition region and corona. We focused our investigation on the fundamental physical processes in solar atmosphere which directly effect our Planet Earth. The overall goal is to establish the physical process for the Sun-Earth connections.

  2. Novel Contact Materials for Improved Performance CdTe Solar Cells Final Report

    SciTech Connect

    Rockett, Angus; Marsillac, Sylvain; Collins, Robert

    This program has explored a number of novel materials for contacts to CdTe solar cells in order to reduce the back contact Schottky barrier to zero and produce an ohmic contact. The project tested a wide range of potential contact materials including TiN, ZrN, CuInSe 2:N, a-Si:H and alloys with C, and FeS2. Improved contacts were achieved with FeS 2. As part of understanding the operation of the devices and controlling the deposition processes, a number of other important results were obtained. In the process of this project and following its conclusion it led to research that resulted in sevenmore » journal articles, nine conference publications, 13 talks presented at conferences, and training of eight graduate students. The seven journal articles were published in 2015, 2016, and 2017 and have been cited, as of March 2018, 52 times (one cited 19 times and two cited 11 times). We demonstrated high levels of doping of CIS with N but electrical activity of the resulting N was not high and the results were difficult to reproduce. Furthermore, even with high doping the contacts were not good. Annealing did not improve the contacts. A-Si:H was found to produce acceptable but unstable contacts, degrading even over a day or two, apparently due to H incorporation into the CdTe. Alloying with C did not improve the contacts or stability. The transition metal nitrides produced Schottky type contacts for all materials tested. While these contacts were found to be unsatisfactory, we investigated FeS 2 and found this material to be effective and comparable to the best contacts currently available. The contacts were found to be chemically stable under heat treatment and preferable to Cu doped contacts. Thus, we demonstrated an improved contact material in the course of this project. In addition, we developed new ways of controlling the deposition of CdTe and other materials, demonstrated the nature of defects in CdTe, and studied the distribution of conductivity and carrier

  3. Solar Sprint

    ERIC Educational Resources Information Center

    Tabor, Richard; Anderson, Stephen

    2007-01-01

    In the "Solar Sprint" activity, students design, test, and race a solar-powered car built with Legos. The use of ratios is incorporated to simulate the actual work of scientists and engineers. This method encourages fourth-grade students to think about multiple variables and stimulates their curiosity when an activity doesn't come out as…

  4. Solar cooking

    USDA-ARS?s Scientific Manuscript database

    Over two billion people face fuel wood shortages, causing tremendous personal and environmental stress. Over 4 million people die prematurely from indoor air pollution. Solar cooking can reduce fuel wood consumption and indoor air pollution. Solar cooking has been practiced and published since th...

  5. Solar Technologies

    ERIC Educational Resources Information Center

    von Hippel, Frank; Williams, Robert H.

    1975-01-01

    As fossil fuels decrease in availability and environmental concerns increase, soalr energy is becoming a potential major energy source. Already solar energy is used for space heating in homes. Proposals for solar-electric generating systems include land-based or ocean-based collectors and harnessing wind and wave power. Photosynthesis can also…

  6. Ductile transplutonium metal alloys

    DOEpatents

    Conner, W.V.

    1981-10-09

    Alloys of Ce with transplutonium metals such as Am, Cm, Bk and Cf have properties making them highly suitable as souces of the transplutonium element, e.g., for use in radiation detector technology or as radiation sources. The alloys are ductile, homogeneous, easy to prepare and have a fairly high density.

  7. Cesium iodide alloys

    DOEpatents

    Kim, H.E.; Moorhead, A.J.

    1992-12-15

    A transparent, strong CsI alloy is described having additions of monovalent iodides. Although the preferred iodide is AgI, RbI and CuI additions also contribute to an improved polycrystalline CsI alloy with outstanding multispectral infrared transmittance properties. 6 figs.

  8. Surface composition of alloys

    NASA Astrophysics Data System (ADS)

    Sachtler, W. M. H.

    1984-11-01

    In equilibrium, the composition of the surface of an alloy will, in general, differ from that of the bulk. The broken-bond model is applicable to alloys with atoms of virtually equal size. If the heat of alloy formation is zero, the component of lower heat of atomization is found enriched in the surface. If both partners have equal heats of sublimination, the surface of a diluted alloy is enriched with the minority component. Size effects can enhance or weaken the electronic effects. In general, lattice strain can be relaxed by precipitating atoms of deviating size on the surface. Two-phase alloys are described by the "cherry model", i.e. one alloy phase, the "kernel" is surrounded by another alloy, the "flesh", and the surface of the outer phase, the "skin" displays a deviating surface composition as in monophasic alloys. In the presence of molecules capable of forming chemical bonds with individual metal atoms, "chemisorption induced surface segregation" can be observed at low temperatures, i.e. the surface becomes enriched with the metal forming the stronger chemisorption bonds.

  9. Aluminum battery alloys

    DOEpatents

    Thompson, D.S.; Scott, D.H.

    1984-09-28

    Aluminum alloys suitable for use as anode structures in electrochemical cells are disclosed. These alloys include iron levels higher than previously felt possible, due to the presence of controlled amounts of manganese, with possible additions of magnesium and controlled amounts of gallium.

  10. Copper-tantalum alloy

    DOEpatents

    Schmidt, Frederick A.; Verhoeven, John D.; Gibson, Edwin D.

    1986-07-15

    A tantalum-copper alloy can be made by preparing a consumable electrode consisting of an elongated copper billet containing at least two spaced apart tantalum rods extending longitudinally the length of the billet. The electrode is placed in a dc arc furnace and melted under conditions which co-melt the copper and tantalum to form the alloy.

  11. Aluminum battery alloys

    DOEpatents

    Thompson, David S.; Scott, Darwin H.

    1985-01-01

    Aluminum alloys suitable for use as anode structures in electrochemical cs are disclosed. These alloys include iron levels higher than previously felt possible, due to the presence of controlled amounts of manganese, with possible additions of magnesium and controlled amounts of gallium.

  12. PLUTONIUM-CERIUM ALLOY

    DOEpatents

    Coffinberry, A.S.

    1959-01-01

    An alloy is presented for use as a reactor fuel. The binary alloy consists essentially of from about 5 to 90 atomic per cent cerium and the balance being plutonium. A complete phase diagram for the cerium--plutonium system is given.

  13. Neutron Absorbing Alloys

    DOEpatents

    Mizia, Ronald E.; Shaber, Eric L.; DuPont, John N.; Robino, Charles V.; Williams, David B.

    2004-05-04

    The present invention is drawn to new classes of advanced neutron absorbing structural materials for use in spent nuclear fuel applications requiring structural strength, weldability, and long term corrosion resistance. Particularly, an austenitic stainless steel alloy containing gadolinium and less than 5% of a ferrite content is disclosed. Additionally, a nickel-based alloy containing gadolinium and greater than 50% nickel is also disclosed.

  14. Ductile transplutonium metal alloys

    DOEpatents

    Conner, William V.

    1983-01-01

    Alloys of Ce with transplutonium metals such as Am, Cm, Bk and Cf have properties making them highly suitable as sources of the transplutonium element, e.g., for use in radiation detector technology or as radiation sources. The alloys are ductile, homogeneous, easy to prepare and have a fairly high density.

  15. Synthesis and characterization of (Sn,Zn)O alloys

    DOE PAGES

    Bikowski, Andre; Holder, Aaron; Peng, Haowei; ...

    2016-09-29

    SnO exhibits electrical properties that render it promising for solar energy conversion applications, but it also has a strongly indirect band gap. Recent theoretical calculations predict that this disadvantage can be mitigated by isovalent alloying with other group-II oxides such as ZnO. Here, we synthesized new metastable isovalent (Sn,Zn)O alloy thin films by combinatorial reactive co-sputtering and characterized their structural, optical and electrical properties. The alloying of ZnO into SnO leads to a change of the valence state of the tin from Sn 0 via Sn 2+ to Sn 4+, which can be counteracted by reducing the oxygen partial pressuremore » during the deposition. The optical characterization of the smooth <10 at. % Sn 1-xZn xO thin films showed an increase in the absorption coefficient in the range from 1 to 2 eV, which is consistent with the theoretical predictions for the isovalent alloying. However, the experimentally observed alloying effect may be convoluted with the effect of local variations of the Sn oxidation state. As a result, this effect would have to be minimized to improve the (Sn,Zn)O optical and electrical properties for their use as absorbers in solar energy conversion applications.« less

  16. Structural properties of a-Si films and their effect on aluminum induced crystallization

    SciTech Connect

    Tankut, Aydin; Ozkol, Engin; Karaman, Mehmet

    2015-10-15

    In this paper, we report the influence of the structural properties of amorphous silicon (a-Si) on its subsequent crystallization behavior via the aluminum induced crystallization (AIC) method. Two distinct a-Si deposition techniques, electron beam evaporation and plasma enhanced chemical vapor deposition (PECVD), are compared for their effect on the overall AIC kinetics as well as the properties of the final poly-crystalline (poly-Si) silicon film. Raman and FTIR spectroscopy results indicate that the PECVD grown a-Si films has higher intermediate-range order, which is enhanced for increased hydrogen dilution during deposition. With increasing intermediate-range order of the a-Si, the rate of AICmore » is diminished, leading larger poly-Si grain size.« less

  17. Effect of Al and Mg Contents on Wettability and Reactivity of Molten Zn-Al-Mg Alloys on Steel Sheets Covered with MnO and SiO2 Layers

    NASA Astrophysics Data System (ADS)

    Huh, Joo-Youl; Hwang, Min-Je; Shim, Seung-Woo; Kim, Tae-Chul; Kim, Jong-Sang

    2018-05-01

    The reactive wetting behaviors of molten Zn-Al-Mg alloys on MnO- and amorphous (a-) SiO2-covered steel sheets were investigated by the sessile drop method, as a function of the Al and Mg contents in the alloys. The sessile drop tests were carried out at 460 °C and the variation in the contact angles (θc) of alloys containing 0.2-2.5 wt% Al and 0-3.0 wt% Mg was monitored for 20 s. For all the alloys, the MnO-covered steel substrate exhibited reactive wetting whereas the a-SiO2-covered steel exhibited nonreactive, nonwetting (θc > 90°) behavior. The MnO layer was rapidly removed by Al and Mg contained in the alloys. The wetting of the MnO-covered steel sheet significantly improved upon increasing the Mg content but decreased upon increasing the Al content, indicating that the surface tension of the alloy droplet is the main factor controlling its wettability. Although the reactions of Al and Mg in molten alloys with the a-SiO2 layer were found to be sluggish, the wettability of Zn-Al-Mg alloys on the a-SiO2 layer improved upon increasing the Al and Mg contents. These results suggest that the wetting of advanced high-strength steel sheets, the surface oxide layer of which consists of a mixture of MnO and SiO2, with Zn-Al-Mg alloys could be most effectively improved by increasing the Mg content of the alloys.

  18. Synthesizing Aluminum alloys by double mechanical alloying

    NASA Astrophysics Data System (ADS)

    Froyen, L.; Delaey, L.; Niu, X. P.; Le Brun, P.; Peytour, C.

    1995-03-01

    A new synthesis technique, namely double mechanical alloying (dMA), has been developed to fabricate aluminum alloys containing the finely distributed intermetallic compounds and inert dispersoids Al4C3 and Al2O3 The technique consists mainly of three steps: a primary milling stage of elemental powders (MAI) followed by a heat treatment to promote the formation of intermetallic phases, a secondary milling stage (MA2) to refine the microstructure, and consolidation of the produced powders. The results of mechanical and tribological properties of the resulting materials indicate that the dMA is a promising technique for the fabrication of aluminum alloys for applications requiring wear resistance and high-temperature performance.

  19. Investigation of accelerated stress factors and failure/degradation mechanisms in terrestrial solar cells

    NASA Technical Reports Server (NTRS)

    Lathrop, J. W.

    1984-01-01

    Research on the reliability of terrestrial solar cells was performed to identify failure/degradation modes affecting solar cells and to relate these to basic physical, chemical, and metallurgical phenomena. Particular concerns addressed were the reliability attributes of individual single crystalline, polycrystalline, and amorphous thin film silicon cells. Results of subjecting different types of crystalline cells to the Clemson accelerated test schedule are given. Preliminary step stress results on one type of thin film amorphous silicon (a:Si) cell indicated that extraneous degradation modes were introduced above 140 C. Also described is development of measurement procedures which are applicable to the reliability testing of a:Si solar cells as well as an approach to achieving the necessary repeatability of fabricating a simulated a:Si reference cell from crystalline silicon photodiodes.

  20. Atomic Structure of Interface States in Silicon Heterojunction Solar Cells

    NASA Astrophysics Data System (ADS)

    George, B. M.; Behrends, J.; Schnegg, A.; Schulze, T. F.; Fehr, M.; Korte, L.; Rech, B.; Lips, K.; Rohrmüller, M.; Rauls, E.; Schmidt, W. G.; Gerstmann, U.

    2013-03-01

    Combining orientation dependent electrically detected magnetic resonance and g tensor calculations based on density functional theory we assign microscopic structures to paramagnetic states involved in spin-dependent recombination at the interface of hydrogenated amorphous silicon crystalline silicon (a-Si:H/c-Si) heterojunction solar cells. We find that (i) the interface exhibits microscopic roughness, (ii) the electronic structure of the interface defects is mainly determined by c-Si, (iii) we identify the microscopic origin of the conduction band tail state in the a-Si:H layer, and (iv) present a detailed recombination mechanism.

  1. Solar electricity and solar fuels

    NASA Astrophysics Data System (ADS)

    Spiers, David J.

    1989-04-01

    The nature of solar radiation and its variation with location is described. The distribution of energy in the solar spectrum places immediate limits on the theoretical efficiency of conversion processes, since practical absorbers cannot convert all wavelengths received to useful energy. The principles of solar energy conversion methods are described. Absorption of solar energy can give rise to direct electrical generation, heating, or chemical change. Electrical generation from sunlight can be achieved by photovoltaic systems directly or by thermal systems which use solar heat to drive a heat engine and generator. The technology used and under research for promising ways of producing electricity or fuel from solar energy is described. Photovoltaic technology is established today for remote area, small power applications, and photovoltaic module sales alone are over 100 million dollars per year at present. The photovoltaic market has grown steadily since the mid-1970's, as prices have fallen continuously. Future energy options are briefly described. The merits of a sustainable energy economy, based on renewable energy resources, including solar energy, are emphasized, as this seems to provide the only hope of eliminating the problems caused by the build-up of atmospheric carbon dioxide, acid rain pollution and nuclear waste disposal. There is no doubt that clean fuels which were derived from solar energy and either did not involve carbon dioxide and used atmospheric carbon dioxide as the source dioxide as the source of carbon would be a worthy ideal. Methods described could one day achieve this.

  2. Overcoming Limitations in Semiconductor Alloy Design

    NASA Astrophysics Data System (ADS)

    Christian, Theresa Marie

    Inorganic semiconductors provide an astonishingly versatile, robust, and efficient platform for optoelectronic energy conversion devices. However, conventional alloys and growth regimes face materials challenges that restrict the full potential of these devices. Novel alloy designs based on isoelectronic co-doping, metamorphic growth and controllable atomic ordering offer new pathways to practical and ultra-high-efficiency optoelectronic devices including solar cells and light-emitting diodes. Abnormal isoelectronic alloys of GaP1-xBix, GaP 1-x-yBixNy, and GaAs1-xBix with unprecedented bismuth incorporation fractions and crystalline quality are explored in this thesis research. Comparative studies of several GaP1-xBix and GaP1-x-yBixNy alloys demonstrate that the site-specific incorporation of bismuth during epitaxial growth is sensitive to growth temperature and has dramatic effects on carrier transfer processes in these alloys. Additionally, distinctive bismuth-related localized states are spectrally identified for the first time in samples of GaAs1-xBix grown by laser-assisted epitaxial growth. These results address fundamental questions about the nature of bismuth-bismuth inter-impurity interactions. Finally, a metamorphic growth strategy for a novel light-emitting diode (LED) design is also discussed. This work utilized direct-bandgap AlxIn1-xP active layers with atomic ordering-based electron confinement to improve emission in the yellow and green spectral regions, where incumbent technologies are least effective, and demonstrated the feasibility of non-lattice-matched LED active materials for visible light emission.

  3. Scattering matrix analysis for evaluating the photocurrent in hydrogenated-amorphous-silicon-based thin film solar cells.

    PubMed

    Shin, Myunghun; Lee, Seong Hyun; Lim, Jung Wook; Yun, Sun Jin

    2014-11-01

    A scattering matrix (S-matrix) analysis method was developed for evaluating hydrogenated amorphous silicon (a-Si:H)-based thin film solar cells. In this approach, light wave vectors A and B represent the incoming and outgoing behaviors of the incident solar light, respectively, in terms of coherent wave and incoherent intensity components. The S-matrix determines the relation between A and B according to optical effects such as reflection and transmission, as described by the Fresnel equations, scattering at the boundary surfaces, or scattering within the propagation medium, as described by the Beer-Lambert law and the change in the phase of the propagating light wave. This matrix can be used to evaluate the behavior of angle-incident coherent and incoherent light simultaneously, and takes into account not only the light scattering process at material boundaries (haze effects) but also nonlinear optical processes within the material. The optical parameters in the S-matrix were determined by modeling both a 2%-gallium-doped zinc oxide transparent conducting oxide and germanium-compounded a-Si:H (a-SiGe:H). Using the S-matrix equations, the photocurrent for an a-Si:H/a-SiGe:H tandem cell and the optical loss in semitransparent a-Si:H solar cells for use in building-integrated photovoltaic applications were analyzed. The developed S-matrix method can also be used as a general analysis tool for various thin film solar cells.

  4. THORIUM-SILICON-BERYLLIUM ALLOYS

    DOEpatents

    Foote, F.G.

    1959-02-10

    Th, Si, anol Bt alloys where Be and Si are each present in anmounts between 0.1 and 3.5% by weight and the total weight per cent of the minor alloying elements is between 1.5 and 4.5% are discussed. These ternary alloys show increased hardness and greater resistant to aqueous corrosion than is found in pure Th, Th-Si alloys, or Th-Be alloys.

  5. Radiation resistance of thin-film solar cells for space photovoltaic power

    NASA Technical Reports Server (NTRS)

    Woodyard, James R.; Landis, Geoffrey A.

    1991-01-01

    Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.

  6. Semiconductor Alloy Theory.

    DTIC Science & Technology

    1985-09-27

    REPORT & PERIOD COVERED -v Semiconductor Alloy Theory Annual 0) 84-9-1 to 85-8-31 M’) 6. PERFORMING O𔃾G. REPORT NUMBER 7. AUTHOR(@) 8. CONTRACT OR...GRANT NUMBER(s) An-Ban Chen AFOSR-84-0282 9. PERFORMING ORGANIZATION NAME AND ADDRESS 10. PROGRAM ELEMENT. PROJECT. TASK AREA & W R UNT NUMBERS Auburn...and the effective mass. We generalized the formula for indirect-gap alloys with multiple bands and applied it to SiGe alloy. Our results, correlated

  7. TUNGSTEN BASE ALLOYS

    DOEpatents

    Schell, D.H.; Sheinberg, H.

    1959-12-15

    A high-density quaternary tungsten-base alloy having high mechanical strength and good machinability composed of about 2 wt.% Ni, 3 wt.% Cu, 5 wt.% Pb, and 90wt.% W is described. This alloy can be formed by the powder metallurgy technique of hot pressing in a graphite die without causing a reaction between charge and the die and without formation of a carbide case on the final compact, thereby enabling re-use of the graphite die. The alloy is formable at hot- pressing temperatures of from about 1200 to about 1350 deg C. In addition, there is little component shrinkage, thereby eliminating the necessity of subsequent extensive surface machining.

  8. Chalcogenide Perovskites for Solar Energy Harvesting

    NASA Astrophysics Data System (ADS)

    Perera, Samanthe

    Methylammonium Lead halide perovskites have recently emerged as a promising candidate for realizing high efficient low cost photovoltaic modules. Charge transport properties of the solution processed halide perovskites are comparable to some of the existing absorbers used in the current PV industry which require sophisticated processing techniques. Due to this simple processing required to achieve high efficiencies, halide perovskites have become an active field of research. As a result, perovskite solar cells are rapidly reaching towards theoretical efficiency limit of close to 30%. It's believed that ionicity inherent to perovskite materials is one of the contributing factors for the excellent charge transport properties of perovskites. Despite the growing interest for solar energy harvesting purposes, these halide perovskites have serious limitations such as toxicity and instability that need to be addressed in order to commercialize the solar cells incorporating them. This dissertation focuses on a new class of ionic semiconductors, chalcogenide perovskites for solar energy harvesting purposes. Coming from the family perovskites they are expected to have same excellent charge transport properties inherent to perovskites due to the ionicity. Inspired by few theoretical studies on chalcogenide perovskites, BaZrS3 and its Ti alloys were synthesized by sulfurizing the oxide counterpart. Structural characterizations have confirmed the predicted distorted perovskite phase. Optical characterizations have verified the direct band gap suitable for thin film single junction solar cells. Anion alloying was demonstrated by synthesizing oxysulfides with widely tunable band gap suitable for applications such as solid state lighting and sensing.

  9. Solar chulha

    SciTech Connect

    Jadhao, P. H.; Patrikar, S. R.

    2016-05-06

    The main goal of the proposed system is to transfer energy from sun to the cooking load that is located in the kitchen. The energy is first collected by the solar collector lens system and two curve bars of same radius of curvature are mounted parallel and adjacent to each other at different height the solar collector is clamed on this two bars such that solar collector is exactly perpendicular to sunlight. The topology includes an additional feature which is window in the wall through which the beam is collimated is directed in the of kitchen. The solar energy thatmore » is collected is directed by the mirror system into the kitchen, where it is redirected to cooking platform located in the kitchen. The special feature in this system full Indian meal can be made since cooking platform is indoors.« less

  10. Solar Energy

    ERIC Educational Resources Information Center

    Building Design and Construction, 1977

    1977-01-01

    Describes 21 completed projects now using solar energy for heating, cooling, or electricity. Included are elementary schools in Atlanta and San Diego, a technical school in Detroit, and Trinity University in San Antonio, Texas. (MLF)

  11. Solar Triumvirate

    NASA Image and Video Library

    2016-02-09

    The magnetic field lines of three active regions in close proximity to one another interacted with each other over two and a half days Feb. 8-10, 2016. This image is from NASA Solar Dynamics Observatory.

  12. Solar Nexus.

    ERIC Educational Resources Information Center

    Murphy, Jim

    1980-01-01

    The design team for the Solar Energy Research Institute (SERI) has pushed the state of the energy art to its current limits for the initial phase, with provisions for foreseeable and even speculative future applications. (Author/MLF)

  13. Solar White

    NASA Image and Video Library

    2017-11-20

    Robert Youngquist, Ph.D., tests a sample disk with a "Solar White" cryogenic selective surface coating with a flash light, demonstrating the coating’s reflective properties. The innovative coating is predicted to reflect more than 99.9 percent of the simulated solar infrared radiation. This technology could enable storing super-cold, or cryogenic, liquids and support systems that shield astronauts against radiation during the Journey to Mars.

  14. Solar Schematic

    NASA Technical Reports Server (NTRS)

    1979-01-01

    The home shown at right is specially designed to accommodate solar heating units; it has roof planes in four directions, allowing placement of solar collectors for best exposure to the sun. Plans (bottom) and complete working blueprints for the solar-heated house are being marketed by Home Building Plan Service, Portland, Oregon. The company also offers an inexpensive schematic (center) showing how a homeowner only moderately skilled in the use of tools can build his own solar energy system, applicable to new or existing structures. The schematic is based upon the design of a low-cost solar home heating system built and tested by NASA's Langley Research Center; used to supplement a warm-air heating system, it can save the homeowner about 40 percent of his annual heating bill for a modest investment in materials and components. Home Building Plan Service saved considerable research time by obtaining a NASA technical report which details the Langley work. The resulting schematic includes construction plans and simplified explanations of solar heat collection, collectors and other components, passive heat factors, domestic hot water supply and how to work with local heating engineers.

  15. Effect of doping on structural, optical and electrical properties of nanostructure ZnO films deposited onto a-Si:H/Si heterojunction

    NASA Astrophysics Data System (ADS)

    Sali, S.; Boumaour, M.; Kermadi, S.; Keffous, A.; Kechouane, M.

    2012-09-01

    We investigated the structural; optical and electrical properties of ZnO thin films as the n-type semiconductor for silicon a-Si:H/Si heterojunction photodiodes. The ZnO film forms the front contact of the super-strata solar cell and has to exhibit good electrical (high conductivity) and optical (high transmittance) properties. In this paper we focused our attention on the influence of doping on device performance. The results show that the X-ray diffraction (XRD) spectra revealed a preferred orientation of the crystallites along c-axis. SEM images show that all films display a granular, polycrystalline morphology and the ZnO:Al exhibits a better grain uniformity. The transmittance of the doped films was found to be higher when compared to undoped ZnO. A low resistivity of the order of 2.8 × 10-4 Ω cm is obtained for ZnO:Al using 0.4 M concentration of zinc acetate. The photoluminescence (PL) spectra exhibit a blue band with two peaks centered at 442 nm (2.80 eV) and 490 nm (2.53 eV). It is noted that after doping the ZnO films a shift of the band by 22 nm (0.15 eV) is recorded and a high luminescence occurs when using Al as a dopant. Dark I-V curves of ZnO/a-Si:H/Si structure showed large difference, which means there is a kind of barrier to current flow between ZnO and a-Si:H layer. Doping films was applied and the turn-on voltages are around 0.6 V. Under reverse bias, the current of the ZnO/a-Si:H/Si heterojunction is larger than that of ZnO:Al/a-Si:H/Si. The improvement with ZnO:Al is attributed to a higher number of generated carriers in the nanostructure (due to the higher transmittance and a higher luminescence) that increases the probability of collisions.

  16. Electroplating on titanium alloy

    NASA Technical Reports Server (NTRS)

    Lowery, J. R.

    1971-01-01

    Activation process forms adherent electrodeposits of copper, nickel, and chromium on titanium alloy. Good adhesion of electroplated deposits is obtained by using acetic-hydrofluoric acid anodic activation process.

  17. Photoluminescence Spectra From The Direct Energy Gap of a-SiQDs

    NASA Astrophysics Data System (ADS)

    Abdul-Ameer, Nidhal M.; Abdulrida, Moafak C.; Abdul-Hakeem, Shatha M.

    2018-05-01

    A theoretical model for radiative recombination in amorphous silicon quantum dots (a-SiQDs) was developed. In this model, for the first time, the coexistence of both spatial and quantum confinements were considered. Also, it is found that the photoluminescence exhibits significant size dependence in the range (1-4) nm of the quantum dots. a-SiQDs show visible light emission peak energies and high radiative quantum efficiency at room temperature,in contrast to bulk a-Si structures. The quantum efficiency is sensitive to any change in defect density (the volume nonradiative centers density and/or the surface nonradiative centers density) but, with small dots sizes, the quantum efficiency is insensitive to such defects. Our analysis shows that the photoluminescence intensity increases or decreases by the effect of radiative quantum efficiency. By controlling the size of a-SiQDs, we note that the energy of emission can be tuned. The blue shift is attributed to quantum confinement effect. Meanwhile, the spatial confinement effect is clearly observed in red shift in emission spectra. we found a good agreement with the experimental published data. Therefore, we assert that a-SiQDs material is a promising candidate for visible, tunable, and high performance devices of light emitting.

  18. PLUTONIUM-URANIUM ALLOY

    DOEpatents

    Coffinberry, A.S.; Schonfeld, F.W.

    1959-09-01

    Pu-U-Fe and Pu-U-Co alloys suitable for use as fuel elements tn fast breeder reactors are described. The advantages of these alloys are ease of fabrication without microcracks, good corrosion restatance, and good resistance to radiation damage. These advantages are secured by limitation of the zeta phase of plutonium in favor of a tetragonal crystal structure of the U/sub 6/Mn type.

  19. Disk Alloy Development

    NASA Technical Reports Server (NTRS)

    Gabb, Tim; Gayda, John; Telesman, Jack

    2001-01-01

    The advanced powder metallurgy disk alloy ME3 was designed using statistical screening and optimization of composition and processing variables in the NASA HSR/EPM disk program to have extended durability at 1150 to 1250 "Fin large disks. Scaled-up disks of this alloy were produced at the conclusion of this program to demonstrate these properties in realistic disk shapes. The objective of the UEET disk program was to assess the mechanical properties of these ME3 disks as functions of temperature, in order to estimate the maximum temperature capabilities of this advanced alloy. Scaled-up disks processed in the HSR/EPM Compressor / Turbine Disk program were sectioned, machined into specimens, and tested in tensile, creep, fatigue, and fatigue crack growth tests by NASA Glenn Research Center, in cooperation with General Electric Engine Company and Pratt & Whitney Aircraft Engines. Additional sub-scale disks and blanks were processed and tested to explore the effects of several processing variations on mechanical properties. Scaled-up disks of an advanced regional disk alloy, Alloy 10, were used to evaluate dual microstructure heat treatments. This allowed demonstration of an improved balance of properties in disks with higher strength and fatigue resistance in the bores and higher creep and dwell fatigue crack growth resistance in the rims. Results indicate the baseline ME3 alloy and process has 1300 to 1350 O F temperature capabilities, dependent on detailed disk and engine design property requirements. Chemistry and process enhancements show promise for further increasing temperature capabilities.

  20. Midscale Commercial Solar Market | Solar Research | NREL

    Science.gov Websites

    analysis to expand the midscale solar market. The midscale market for solar photovoltaics (PV), loosely than other PV market segments in recent years. Featured Analysis Midmarket Solar Policies in the United Midscale Commercial Solar Market Midscale Commercial Solar Market NREL experts are providing

  1. Solar Activity and Solar Eruptions

    NASA Technical Reports Server (NTRS)

    Sterling, Alphonse C.

    2006-01-01

    Our Sun is a dynamic, ever-changing star. In general, its atmosphere displays major variation on an 11-year cycle. Throughout the cycle, the atmosphere occasionally exhibits large, sudden outbursts of energy. These "solar eruptions" manifest themselves in the form of solar flares, filament eruptions, coronal mass ejections (CMEs), and energetic particle releases. They are of high interest to scientists both because they represent fundamental processes that occur in various astrophysical context, and because, if directed toward Earth, they can disrupt Earth-based systems and satellites. Research over the last few decades has shown that the source of the eruptions is localized regions of energy-storing magnetic field on the Sun that become destabilized, leading to a release of the stored energy. Solar scientists have (probably) unraveled the basic outline of what happens in these eruptions, but many details are still not understood. In recent years we have been studying what triggers these magnetic eruptions, using ground-based and satellite-based solar observations in combination with predictions from various theoretical models. We will present an overview of solar activity and solar eruptions, give results from some of our own research, and discuss questions that remain to be explored.

  2. Is light-induced degradation of a-Si:H/c-Si interfaces reversible?

    SciTech Connect

    El Mhamdi, El Mahdi; Holovsky, Jakub; Demaurex, Bénédicte

    2014-06-23

    Thin hydrogenated amorphous silicon (a-Si:H) films deposited on crystalline silicon (c-Si) surfaces are sensitive probes for the bulk electronic properties of a-Si:H. Here, we use such samples during repeated low-temperature annealing and visible-light soaking to investigate the long-term stability of a-Si:H films. We observe that during annealing the electronic improvement of the interfaces follows stretched exponentials as long as hydrogen evolution in the films can be detected. Once such evolution is no longer observed, the electronic improvement occurs much faster. Based on these findings, we discuss how the reversibility of light-induced defects depends on (the lack of observable) hydrogen evolution.

  3. Combined multifrequency EPR and DFT study of dangling bonds in a-Si:H

    NASA Astrophysics Data System (ADS)

    Fehr, M.; Schnegg, A.; Rech, B.; Lips, K.; Astakhov, O.; Finger, F.; Pfanner, G.; Freysoldt, C.; Neugebauer, J.; Bittl, R.; Teutloff, C.

    2011-12-01

    Multifrequency pulsed electron paramagnetic resonance (EPR) spectroscopy using S-, X-, Q-, and W-band frequencies (3.6, 9.7, 34, and 94 GHz, respectively) was employed to study paramagnetic coordination defects in undoped hydrogenated amorphous silicon (a-Si:H). The improved spectral resolution at high magnetic field reveals a rhombic splitting of the g tensor with the following principal values: gx=2.0079, gy=2.0061, and gz=2.0034, and shows pronounced g strain, i.e., the principal values are widely distributed. The multifrequency approach furthermore yields precise 29Si hyperfine data. Density functional theory (DFT) calculations on 26 computer-generated a-Si:H dangling-bond models yielded g values close to the experimental data but deviating hyperfine interaction values. We show that paramagnetic coordination defects in a-Si:H are more delocalized than computer-generated dangling-bond defects and discuss models to explain this discrepancy.

  4. Optimized Varian aSi portal dosimetry: development of datasets for collective use.

    PubMed

    Van Esch, Ann; Huyskens, Dominique P; Hirschi, Lukas; Baltes, Christof

    2013-11-04

    Although much literature has been devoted to portal dosimetry with the Varian amorphous silicon (aSi) portal imager, the majority of the described methods are not routinely adopted because implementation procedures are cumbersome and not within easy reach of most radiotherapy centers. To make improved portal dosimetry solutions more generally available, we have investigated the possibility of converting optimized configurations into ready-to-use standardized datasets. Firstly, for all commonly used photon energies (6, 10, 15, 18, and 20 MV), basic beam data acquired on 20 aSi panels were used to assess the interpanel reproducibility. Secondly, a standardized portal dose image prediction (PDIP) algorithm configuration was created for every energy, using a three-step process to optimize the aSi dose response function and profile correction files for the dosimetric calibration of the imager panel. An approximate correction of the backscatter of the Exact arm was also incorporated. Thirdly, a set of validation fields was assembled to assess the accuracy of the standardized configuration. Variations in the basic beam data measured on different aSi panels very rarely exceeded 2% (2 mm) and are of the same order of magnitude as variations between different Clinacs when measuring in reference conditions in water. All studied aSi panels can hence be regarded as nearly identical. Standardized datasets were successfully created and implemented. The test package proved useful in highlighting possible problems and illustrating remaining limitations, but also in demonstrating the good overall results (95% pass rate for 3%,3 mm) that can be obtained. The dosimetric behavior of all tested aSi panels was found to be nearly identical for all tested energies. The approach of using standardized datasets was then successfully tested through the creation and evaluation of PDIP preconfigured datasets that can be used within the Varian portal dosimetry solution.

  5. Reduction in the formation temperature of Poly-SiGe alloy thin film in Si/Ge system

    NASA Astrophysics Data System (ADS)

    Tah, Twisha; Singh, Ch. Kishan; Madapu, K. K.; Sarguna, R. M.; Magudapathy, P.; Ilango, S.

    2018-04-01

    The role of deposition temperature in the formation of poly-SiGe alloy thin film in Si/Ge system is reported. For the set ofsamples deposited without any intentional heating, initiation of alloying starts upon post annealingat ˜ 500 °C leading to the formation of a-SiGe. Subsequently, poly-SiGe alloy phase could formonly at temperature ≥ 800 °C. Whereas, for the set of samples deposited at 500 °C, in-situ formation of poly-SiGe alloy thin film could be observed. The energetics of the incoming evaporated atoms and theirsubsequent diffusionsin the presence of the supplied thermal energy is discussed to understand possible reasons for lowering of formation temperature/energyof the poly-SiGe phase.

  6. Solar Minimum

    NASA Astrophysics Data System (ADS)

    Lopresto, James C.; Mathews, John; Manross, Kevin

    1995-12-01

    Calcium K plage, H alpha plage and sunspot area have been monitored daily on the INTERNET since November of 1992. The plage and sunspot area have been measured by image processing. The purpose of the project is to investigate the degree of correlation between plage area and solar irradiance. The plage variation shows the expected variation produced by solar rotation and the longer secular changes produced by the solar cycle. The H alpha and sunspot plage area reached a minimum in about late 1994 or early 1995. This is in agreement with the K2 spectral index obtained daily from Sacramento Peak Observatory. The Calcium K plage area minimum seems delayed with respect to the others mentioned above. The minimum of the K line plage area is projected to come within the last few months of 1995.

  7. Solar Neutrinos

    DOE R&D Accomplishments Database

    Davis, R. Jr.; Harmer, D. S.

    1964-12-01

    The prospect of studying the solar energy generation process directly by observing the solar neutrino radiation has been discussed for many years. The main difficulty with this approach is that the sun emits predominantly low energy neutrinos, and detectors for observing low fluxes of low energy neutrinos have not been developed. However, experimental techniques have been developed for observing neutrinos, and one can foresee that in the near future these techniques will be improved sufficiently in sensitivity to observe solar neutrinos. At the present several experiments are being designed and hopefully will be operating in the next year or so. We will discuss an experiment based upon a neutrino capture reaction that is the inverse of the electron-capture radioactive decay of argon-37. The method depends upon exposing a large volume of a chlorine compound, removing the radioactive argon-37 and observing the characteristic decay in a small low-level counter.

  8. On Nb Silicide Based Alloys: Alloy Design and Selection.

    PubMed

    Tsakiropoulos, Panos

    2018-05-18

    The development of Nb-silicide based alloys is frustrated by the lack of composition-process-microstructure-property data for the new alloys, and by the shortage of and/or disagreement between thermodynamic data for key binary and ternary systems that are essential for designing (selecting) alloys to meet property goals. Recent publications have discussed the importance of the parameters δ (related to atomic size), Δχ (related to electronegativity) and valence electron concentration (VEC) (number of valence electrons per atom filled into the valence band) for the alloying behavior of Nb-silicide based alloys (J Alloys Compd 748 (2018) 569), their solid solutions (J Alloys Compd 708 (2017) 961), the tetragonal Nb₅Si₃ (Materials 11 (2018) 69), and hexagonal C14-NbCr₂ and cubic A15-Nb₃X phases (Materials 11 (2018) 395) and eutectics with Nb ss and Nb₅Si₃ (Materials 11 (2018) 592). The parameter values were calculated using actual compositions for alloys, their phases and eutectics. This paper is about the relationships that exist between the alloy parameters δ, Δχ and VEC, and creep rate and isothermal oxidation (weight gain) and the concentrations of solute elements in the alloys. Different approaches to alloy design (selection) that use property goals and these relationships for Nb-silicide based alloys are discussed and examples of selected alloy compositions and their predicted properties are given. The alloy design methodology, which has been called NICE (Niobium Intermetallic Composite Elaboration), enables one to design (select) new alloys and to predict their creep and oxidation properties and the macrosegregation of Si in cast alloys.

  9. On Nb Silicide Based Alloys: Alloy Design and Selection

    PubMed Central

    Tsakiropoulos, Panos.

    2018-01-01

    The development of Nb-silicide based alloys is frustrated by the lack of composition-process-microstructure-property data for the new alloys, and by the shortage of and/or disagreement between thermodynamic data for key binary and ternary systems that are essential for designing (selecting) alloys to meet property goals. Recent publications have discussed the importance of the parameters δ (related to atomic size), Δχ (related to electronegativity) and valence electron concentration (VEC) (number of valence electrons per atom filled into the valence band) for the alloying behavior of Nb-silicide based alloys (J Alloys Compd 748 (2018) 569), their solid solutions (J Alloys Compd 708 (2017) 961), the tetragonal Nb5Si3 (Materials 11 (2018) 69), and hexagonal C14-NbCr2 and cubic A15-Nb3X phases (Materials 11 (2018) 395) and eutectics with Nbss and Nb5Si3 (Materials 11 (2018) 592). The parameter values were calculated using actual compositions for alloys, their phases and eutectics. This paper is about the relationships that exist between the alloy parameters δ, Δχ and VEC, and creep rate and isothermal oxidation (weight gain) and the concentrations of solute elements in the alloys. Different approaches to alloy design (selection) that use property goals and these relationships for Nb-silicide based alloys are discussed and examples of selected alloy compositions and their predicted properties are given. The alloy design methodology, which has been called NICE (Niobium Intermetallic Composite Elaboration), enables one to design (select) new alloys and to predict their creep and oxidation properties and the macrosegregation of Si in cast alloys. PMID:29783707

  10. Effect of surface reaction layer on grindability of cast titanium alloys.

    PubMed

    Ohkubo, Chikahiro; Hosoi, Toshio; Ford, J Phillip; Watanabe, Ikuya

    2006-03-01

    The purpose of this study was to investigate the effect of the cast surface reaction layer on the grindability of titanium alloys, including free-machining titanium alloy (DT2F), and to compare the results with the grindability of two dental casting alloys (gold and Co-Cr). All titanium specimens (pure Ti, Ti-6Al-4V and DT2F) were cast using a centrifugal casting machine in magnesia-based investment molds. Two specimen sizes were used to cast the titanium metals so that the larger castings would be the same size as the smaller gold and Co-Cr alloy specimens after removal of the surface reaction layer (alpha-case). Grindability was measured as volume loss ground from a specimen for 1 min using a handpiece engine with a SiC abrasive wheel at 0.1 kgf and four circumferential wheel speeds. For the titanium and gold alloys, grindability increased as the rotational speed increased. There was no statistical difference (p>0.05) in grindability for all titanium specimens either with or without the alpha-case. Of the titanium metals tested, Ti-6 Al-4V had the greatest grindability at higher speeds, followed by DT2F and CP Ti. The grindability of the gold alloy was similar to that of Ti-6 Al-4V, whereas the Co-Cr alloy had the lowest grindability. The results of this study indicated that the alpha-case did not significantly affect the grindability of the titanium alloys. The free-machining titanium alloy had improved grindability compared to CP Ti.

  11. Current Approach in Surface Plasmons for Thin Film and Wire Array Solar Cell Applications

    PubMed Central

    Zhou, Keya; Guo, Zhongyi; Liu, Shutian; Lee, Jung-Ho

    2015-01-01

    Surface plasmons, which exist along the interface of a metal and a dielectric, have been proposed as an efficient alternative method for light trapping in solar cells during the past ten years. With unique properties such as superior light scattering, optical trapping, guide mode coupling, near field concentration, and hot-electron generation, metallic nanoparticles or nanostructures can be tailored to a certain geometric design to enhance solar cell conversion efficiency and to reduce the material costs. In this article, we review current approaches on different kinds of solar cells, such as crystalline silicon (c-Si) and amorphous silicon (a-Si) thin film solar cells, organic solar cells, nanowire array solar cells, and single nanowire solar cells. PMID:28793457

  12. Solar cells

    NASA Astrophysics Data System (ADS)

    Cuquel, A.; Roussel, M.

    The physical and electronic characteristics of solar cells are discussed in terms of space applications. The principles underlying the photovoltaic effect are reviewed, including an analytic model for predicting the performance of individual cells and arrays of cells. Attention is given to the effects of electromagnetic and ionizing radiation, micrometeors, thermal and mechanical stresses, pollution and degassing encountered in space. The responses of different types of solar cells to the various performance-degrading agents are examined, with emphasis on techniques for quality assurance in the manufacture and mounting of Si cells.

  13. Silicon homo-heterojunction solar cells: A promising candidate to realize high performance more stably

    NASA Astrophysics Data System (ADS)

    Tan, Miao; Zhong, Sihua; Wang, Wenjie; Shen, Wenzhong

    2017-08-01

    We have investigated the influences of diverse physical parameters on the performances of a silicon homo-heterojunction (H-H) solar cell, which encompasses both homojunction and heterojunction, together with their underlying mechanisms by the aid of AFORS-HET simulation. It is found that the performances of H-H solar cell are less sensitive to (i) the work function of the transparent conductive oxide layer, (ii) the interfacial density of states at the front hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) interface, (iii) the peak dangling bond defect densities within the p-type a-Si:H (p-a-Si:H) layer, and (iv) the doping concentration of the p-a-Si:H layer, when compared to that of the conventional heterojunction with intrinsic thin layer (HIT) counterparts. These advantages are due to the fact that the interfacial recombination and the recombination within the a-Si:H region are less affected by all the above parameters, which fundamentally benefit from the field-effect passivation of the homojunction. Therefore, the design of H-H structure can provide an opportunity to produce high-efficiency solar cells more stably.

  14. Concentrating Solar Power Projects - Nevada Solar One | Concentrating Solar

    Science.gov Websites

    Power | NREL Nevada Solar One This page provides information on Nevada Solar One, a configuration. Acciona Energy's Nevada Solar One is the third largest CSP plant in the world and the first plant roads. Project Overview Project Name: Nevada Solar One (NSO) Country: United States Location: Boulder

  15. Solar maximum: Solar array degradation

    NASA Technical Reports Server (NTRS)

    Miller, T.

    1985-01-01

    The 5-year in-orbit power degradation of the silicon solar array aboard the Solar Maximum Satellite was evaluated. This was the first spacecraft to use Teflon R FEP as a coverglass adhesive, thus avoiding the necessity of an ultraviolet filter. The peak power tracking mode of the power regulator unit was employed to ensure consistent maximum power comparisons. Telemetry was normalized to account for the effects of illumination intensity, charged particle irradiation dosage, and solar array temperature. Reference conditions of 1.0 solar constant at air mass zero and 301 K (28 C) were used as a basis for normalization. Beginning-of-life array power was 2230 watts. Currently, the array output is 1830 watts. This corresponds to a 16 percent loss in array performance over 5 years. Comparison of Solar Maximum Telemetry and predicted power levels indicate that array output is 2 percent less than predictions based on an annual 1.0 MeV equivalent election fluence of 2.34 x ten to the 13th power square centimeters space environment.

  16. Glassy Metal Alloy Nanofiber Anodes Employing Graphene Wrapping Layer: Toward Ultralong-Cycle-Life Lithium-Ion Batteries.

    PubMed

    Jung, Ji-Won; Ryu, Won-Hee; Shin, Jungwoo; Park, Kyusung; Kim, Il-Doo

    2015-07-28

    Amorphous silicon (a-Si) has been intensively explored as one of the most attractive candidates for high-capacity and long-cycle-life anode in Li-ion batteries (LIBs) primarily because of its reduced volume expansion characteristic (∼280%) compared to crystalline Si anodes (∼400%) after full Li(+) insertion. Here, we report one-dimensional (1-D) electrospun Si-based metallic glass alloy nanofibers (NFs) with an optimized composition of Si60Sn12Ce18Fe5Al3Ti2. On the basis of careful compositional tailoring of Si alloy NFs, we found that Ce plays the most important role as a glass former in the formation of the metallic glass alloy. Moreover, Si-based metallic glass alloy NFs were wrapped by reduced graphene oxide sheets (specifically Si60Sn12Ce18Fe5Al3Ti2 NFs@rGO), which can prevent the direct exposure of a-Si alloy NFs to the liquid electrolyte and stabilize the solid-electrolyte interphase (SEI) layers on the surfaces of rGO sheets while facilitating electron transport. The metallic glass nanofibers exhibited superior electrochemical cell performance as an anode: (i) Si60Sn12Ce18Fe5Al3Ti2 NFs show a high specific capacity of 1017 mAh g(-1) up to 400 cycles at 0.05C with negligible capacity loss as well as superior cycling performance (nearly 99.9% capacity retention even after 2000 cycles at 0.5C); (ii) Si60Sn12Ce18Fe5Al3Ti2 NFs@rGO reveals outstanding rate behavior (569.77 mAh g(-1) after 2000 cycles at 0.5C and a reversible capacity of around 370 mAh g(-1) at 4C). We demonstrate the potential suitability of multicomponent a-Si alloy NFs as a long-cycling anode material.

  17. Solar Energy and You.

    ERIC Educational Resources Information Center

    Conservation and Renewable Energy Inquiry and Referral Service (DOE), Silver Spring, MD.

    This booklet provides an introduction to solar energy by discussing: (1) how a home is heated; (2) how solar energy can help in the heating process; (3) the characteristics of passive solar houses; (4) the characteristics of active solar houses; (5) how solar heat is stored; and (6) other uses of solar energy. Also provided are 10 questions to…

  18. Development of Formulations for a-SiC and Manganese CMP and Post-CMP Cleaning of Cobalt

    NASA Astrophysics Data System (ADS)

    Lagudu, Uma Rames Krishna

    We have investigated the chemical mechanical polishing (CMP) of amorphous SiC (a-SiC) and Mn and Post CMP cleaning of cobalt for various device applications. During the manufacture of copper interconnects using the damascene process the polishing of copper is followed by the polishing of the barrier material (Co, Mn, Ru and their alloys) and its post CMP cleaning. This is followed by the a-SiC hard mask CMP. Silicon carbide thin films, though of widespread use in microelectronic engineering, are difficult to process by CMP because of their hardness and chemical inertness. The earlier part of the SiC work discusses the development of slurries based on silica abrasives that resulted in high a-SiC removal rates (RRs). The ionic strength of the silica dispersion was found to play a significant role in enhancing material removal rate, while also providing very good post-polish surface-smoothness. For example, the addition of 50 mM potassium nitrate to a pH 8 aqueous slurry consisting of 10 wt % of silica abrasives and 1.47 M hydrogen peroxide increased the RR from about 150 nm/h to about 2100 nm/h. The role of ionic strength in obtaining such high RRs was investigated using surface zeta-potentials measurements and X-ray photoelectron spectroscopy (XPS). Evidently, hydrogen peroxide promoted the oxidation of Si and C to form weakly adhered species that were subsequently removed by the abrasive action of the silica particles. The effect of potassium nitrate in increasing material removal is attributed to the reduction in the electrostatic repulsion between the abrasive particles and the SiC surface because of screening of surface charges by the added electrolyte. We also show that transition metal compounds when used as additives to silica dispersions enhance a-SiC removal rates (RRs). Silica slurries containing potassium permanganate gave RRs as high as 2000 nm/h at pH 4. Addition of copper sulfate to this slurry further enhanced the RRs to ˜3500 nm/h at pH 6

  19. Amorphous and crystalline silicon based heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Schüttauf, J. A.

    2011-10-01

    In this thesis, research on amorphous and crystalline silicon heterojunction (SHJ) solar cells is described. Probably the most important feature of SHJ solar cells is a thin intrinsic amorphous silicion (a-Si:H) layer that is deposited before depositing the doped emitter and back surface field. The passivation properties of such intrinsic layers made by three different chemical vapor deposition (CVD) techniques have been investigated. For layers deposited at 130°C, all techniques show a strong reduction in surface recombination velocity (SRV) after annealing. Modelling indicates that dangling bond saturation by atomic hydrogen is the predominant mechanism. We obtain outstanding carrier lifetimes of 10.3 ms, corresponding to SRVs of 0.56 cm/s. For a-Si:H films made at 250°C, an as-deposited minority carrier lifetime of 2.0 ms is observed. In contrast to a-Si:H films fabricated at 130°C, however, no change in passivation quality upon thermal annealing is observed. These films were fabricated for the first time using a continuous in-line HWCVD mode. Wafer cleaning before a-Si:H deposition is a crucial step for c-Si surface passivation. We tested the influence of an atomic hydrogen treatment before a-Si:H deposition on the c-Si surface. The treatments were performed in a new virgin chamber to exclude Si deposition from the chamber walls. Subsequently, we deposited a-Si:H layers onto the c-Si wafers and measured the lifetime for different H treatment times. We found that increasing hydrogen treatment times led to lower effective lifetimes. Modelling of the measured minority carrier lifetime data shows that the decreased passivation quality is caused by an increased defect density at the amorphous-crystalline interface. Furtheremore, the passivation of different a-Si:H containing layers have been tested. For intrinsic films and intrinsic/n-type stacks, an improvement in passivation up to 255°C and 270°C is observed. This improvement is attributed to dangling bond

  20. Research on High-Bandgap Materials and Amorphous Silicon-Based Solar Cells, Final Technical Report, 15 May 1994-15 January 1998

    SciTech Connect

    Schiff, E. A.; Gu, Q.; Jiang, L.

    1998-12-28

    This report describes work performed by Syracuse University under this subcontract. Researchers developed a technique based on electroabsorption measurements for obtaining quantitative estimates of the built-in potential Vbi in a-Si:H-based heterostructure solar cells incorporating microcrystalline or a-SiC:H p layers. Using this new electroabsorption technique, researchers confirmed previous estimates of Vbi {yields} 1.0 V in a-Si:H solar cells with ''conventional'' intrinsic layers and either microcrystalline or a-SiC:H p layers. Researchers also explored the recent claim that light-soaking of a-Si:H substantially changes the polarized electroabsorption associated with interband optical transitions (and hence, not defect transitions). Researchers confirmed measurements of improved (5') holemore » drift mobilities in some specially prepared a-Si:H samples. Disturbingly, solar cells made with such materials did not show improved efficiencies. Researchers significantly clarified the relationship of ambipolar diffusion-length measurements to hole drift mobilities in a-Si:H, and have shown that the photocapacitance measurements can be interpreted in terms of hole drift mobilities in amorphous silicon. They also completed a survey of thin BP:H and BPC:H films prepared by plasma deposition using phosphine, diborane, trimethylboron, and hydrogen as precursor gases.« less

  1. Microprocessing of ITO and a-Si thin films using ns laser sources

    NASA Astrophysics Data System (ADS)

    Molpeceres, C.; Lauzurica, S.; Ocaña, J. L.; Gandía, J. J.; Urbina, L.; Cárabe, J.

    2005-06-01

    Selective ablation of thin films for the development of new photovoltaic panels and sensoring devices based on amorphous silicon (a-Si) is an emerging field, in which laser micromachining systems appear as appropriate tools for process development and device fabrication. In particular, a promising application is the development of purely photovoltaic position sensors. Standard p-i-n or Schottky configurations using transparent conductive oxides (TCO), a-Si and metals are especially well suited for these applications, appearing selective laser ablation as an ideal process for controlled material patterning and isolation. In this work a detailed study of laser ablation of a widely used TCO, indium-tin-oxide (ITO), and a-Si thin films of different thicknesses is presented, with special emphasis on the morphological analysis of the generated grooves. Excimer (KrF, λ = 248 nm) and DPSS lasers (λ = 355 and λ = 1064 nm) with nanosecond pulse duration have been used for material patterning. Confocal laser scanning microscopy (CLSM) and scanning electron microscopy (SEM) techniques have been applied for the characterization of the ablated grooves. Additionally, process parametric windows have been determined in order to assess this technology as potentially competitive to standard photolithographic processes. The encouraging results obtained, with well-defined ablation grooves having thicknesses in the order of 10 µm both in ITO and in a-Si, open up the possibility of developing a high-performance double Schottky photovoltaic matrix position sensor.

  2. Combined TEM and NanoSIMS Analysis of Subgrains in a SiC AB Grain

    NASA Astrophysics Data System (ADS)

    Hynes, K. M.; Amari, S.; Bernatowicz, T. J.; Lebsack, E.; Gyngard, F.; Nittler, L. R.

    2011-03-01

    We report the results of NanoSIMS and TEM analysis, including isotopic, structural, chemical, and subgrain data, on a SiC AB grain. This grain contains the first oldhamite subgrains observed in a presolar grain, as well as TiC- and Fe-rich subgrains.

  3. Active counter electrode in a-SiC electrochemical metallization memory

    NASA Astrophysics Data System (ADS)

    Morgan, K. A.; Fan, J.; Huang, R.; Zhong, L.; Gowers, R.; Ou, J. Y.; Jiang, L.; De Groot, C. H.

    2017-08-01

    Cu/amorphous-SiC (a-SiC) electrochemical metallization memory cells have been fabricated with two different counter electrode (CE) materials, W and Au, in order to investigate the role of CEs in a non-oxide semiconductor switching matrix. In a positive bipolar regime with Cu filaments forming and rupturing, the CE influences the OFF state resistance and minimum current compliance. Nevertheless, a similarity in SET kinetics is seen for both CEs, which differs from previously published SiO2 memories, confirming that CE effects are dependent on the switching layer material or type. Both a-SiC memories are able to switch in the negative bipolar regime, indicating Au and W filaments. This confirms that CEs can play an active role in a non-oxide semiconducting switching matrix, such as a-SiC. By comparing both Au and W CEs, this work shows that W is superior in terms of a higher R OFF/R ON ratio, along with the ability to switch at lower current compliances making it a favourable material for future low energy applications. With its CMOS compatibility, a-SiC/W is an excellent choice for future resistive memory applications.

  4. Solar VLBI

    NASA Technical Reports Server (NTRS)

    Tapping, K. F.; Kuijpers, J.

    1986-01-01

    In April, 1981, radio telescopes at Dwingeloo (The Netherlands) and Onsala (Sweden) were used as a long-baseline interferometer at a wavelength of 18 cm. The baseline of 619 km gave a spatial resolution on the Sun of about 45 km. The major problems of Solar Very Long Baseline Interferometry are discussed.

  5. Solar satellites

    NASA Astrophysics Data System (ADS)

    Poher, C.

    A reference system design, projected costs, and the functional concepts of a satellite solar power system (SSPS) for converting sunlight falling on solar panels of a satellite in GEO to a multi-GW beam which could be received by a rectenna on earth are outlined. Electricity transmission by microwaves has been demonstrated, and a reference design system for supplying 5 GW dc to earth was devised. The system will use either monocrystalline Si or concentrator GaAs solar cells for energy collection in GEO. Development is still needed to improve the lifespan of the cells. Currently, the cell performance degrades 50 percent in efficiency after 7-8 yr in space. Each SSPS satellite would weigh either 34,000 tons (Si) or 51,000 tons (GaAs), thereby requiring the fabrication of a heavy lift launch vehicle or a single-stage-to-orbit transport in order to minimize launch costs. Costs for the solar panels have been estimated at $500/kW using the GaAs technology, with transport costs for materials to GEO being $40/kg.

  6. Solar Power

    ERIC Educational Resources Information Center

    Ford, Norman C.; Kane, Joseph W.

    1971-01-01

    Proposes a method of collecting solar energy by using available plastics for Fresnel lenses to focus heat onto a converter where thermal dissociation of water would produce hydrogen. The hydrogen would be used as an efficient non-polluting fuel. Cost estimates are included. (AL)

  7. Solar Eclipse

    Atmospheric Science Data Center

    2013-04-16

    ... View Larger Image Within that narrow window during a solar eclipse where an observer on Earth can watch the Moon's shadow obscure ... of the imagery acquired during Terra orbit 20920. The panels cover an area of about 380 kilometers x 2909 kilometers and use data ...

  8. Solar concentrator

    NASA Technical Reports Server (NTRS)

    Simpson, J. G. (Inventor)

    1979-01-01

    An improved solar concentrator is characterized by a number of elongated supporting members arranged in substantial horizontal parallelism with the axis and intersecting a common curve. A tensioned sheet of flexible reflective material is disposed in engaging relation with the supporting members in order to impart to the tensioned sheet a catenary configuration.

  9. De-alloyed platinum nanoparticles

    DOEpatents

    Strasser, Peter [Houston, TX; Koh, Shirlaine [Houston, TX; Mani, Prasanna [Houston, TX; Ratndeep, Srivastava [Houston, TX

    2011-08-09

    A method of producing de-alloyed nanoparticles. In an embodiment, the method comprises admixing metal precursors, freeze-drying, annealing, and de-alloying the nanoparticles in situ. Further, in an embodiment de-alloyed nanoparticle formed by the method, wherein the nanoparticle further comprises a core-shell arrangement. The nanoparticle is suitable for electrocatalytic processes and devices.

  10. PLUTONIUM-URANIUM-TITANIUM ALLOYS

    DOEpatents

    Coffinberry, A.S.

    1959-07-28

    A plutonium-uranium alloy suitable for use as the fuel element in a fast breeder reactor is described. The alloy contains from 15 to 60 at.% titanium with the remainder uranium and plutonium in a specific ratio, thereby limiting the undesirable zeta phase and rendering the alloy relatively resistant to corrosion and giving it the essential characteristic of good mechanical workability.

  11. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOEpatents

    Kaschmitter, James L.

    1996-01-01

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

  12. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOEpatents

    Kaschmitter, J.L.

    1996-07-23

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

  13. Improved amorphous/crystalline silicon interface passivation for heterojunction solar cells by low-temperature chemical vapor deposition and post-annealing treatment.

    PubMed

    Wang, Fengyou; Zhang, Xiaodan; Wang, Liguo; Jiang, Yuanjian; Wei, Changchun; Xu, Shengzhi; Zhao, Ying

    2014-10-07

    In this study, hydrogenated amorphous silicon (a-Si:H) thin films are deposited using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) system. The Si-H configuration of the a-Si:H/c-Si interface is regulated by optimizing the deposition temperature and post-annealing duration to improve the minority carrier lifetime (τeff) of a commercial Czochralski (Cz) silicon wafer. The mechanism of this improvement involves saturation of the microstructural defects with hydrogen evolved within the a-Si:H films due to the transformation from SiH2 into SiH during the annealing process. The post-annealing temperature is controlled to ∼180 °C so that silicon heterojunction solar cells (SHJ) could be prepared without an additional annealing step. To achieve better performance of the SHJ solar cells, we also optimize the thickness of the a-Si:H passivation layer. Finally, complete SHJ solar cells are fabricated using different temperatures for the a-Si:H film deposition to study the influence of the deposition temperature on the solar cell parameters. For the optimized a-Si:H deposition conditions, an efficiency of 18.41% is achieved on a textured Cz silicon wafer.

  14. Transparent Alloys Operation

    NASA Image and Video Library

    2018-03-26

    iss055e005543 (March 26, 2018) --- Expedition 55 Flight Engineer and astronaut Scott Tingle is pictured conducting the Transparent Alloys experiment inside the Destiny lab module's Microgravity Science Glovebox. The Transparent Alloys study is a set of five experiments that seeks to improve the understanding of melting-solidification processes in plastics without the interference of Earth's gravity environment. Results may impact the development of new light-weight, high-performance structural materials for space applications. Observations may also impact fuel efficiency, consumption and recycling of materials on Earth potentially reducing costs and increasing industrial competitiveness.

  15. Towards maximizing the haze effect of electrodes for high efficiency hybrid tandem solar cell

    NASA Astrophysics Data System (ADS)

    Vincent, Premkumar; Song, Dong-Seok; Kwon, Hyeok Bin; Kim, Do-Kyung; Jung, Ji-Hoon; Kwon, Jin-Hyuk; Choe, Eunji; Kim, Young-Rae; Kim, Hyeok; Bae, Jin-Hyuk

    2018-02-01

    In this study, we executed optical simulations to compute the optimum power conversion efficiency (PCE) of a-Si:H/organic photovoltaic (OPV) hybrid tandem solar cell. The maximum ideal short circuit current density (Jsc,max) of the tandem solar cell is initially obtained by optimizing the thickness of the active layer of the OPV subcell for varying thickness of the a-Si:H bottom subcell. To investigate the effect of Haze parameter on the ideal short-circuit current density (Jsc,ideal) of the solar cells, we have varied the haze ratio for the TCO electrode of the a-Si:H subcell in the tandem structure. The haze ratio was obtained for various root mean square (RMS) roughness of the TCO of the front cell. The effect of haze ratio on the Jsc,ideal on the tandem structured solar cell was studied, and the highest Jsc,ideal was obtained at a haze of 55.5% when the thickness of the OPV subcell was 150 nm and that of the a-Si:H subcell was 500 nm.

  16. Solar Impulse's Solar-Powered Plane

    SciTech Connect

    Moniz, Ernest; Piccard, Bertrand; Reicher, Dan

    Solar Impulse lands in Washington, DC at Washington Dulles International Airport as part of its journey across the United States. Secretary Ernest Moniz speaks about how advancements like those at the Department of Energy are leading the way for innovations like the solar-powered plane. Footage of the solar-powered plane courtesy of Solar Impulse.

  17. Collecting Solar Energy. Solar Energy Education Project.

    ERIC Educational Resources Information Center

    O'Brien, Alexander

    This solar energy learning module for use with junior high school students offers a list of activities, a pre-post test, job titles, basic solar energy vocabulary, and diagrams of solar energy collectors and installations. The purpose is to familiarize students with applications of solar energy and titles of jobs where this knowledge could be…

  18. Solar Impulse's Solar-Powered Plane

    ScienceCinema

    Moniz, Ernest; Piccard, Bertrand; Reicher, Dan

    2018-01-16

    Solar Impulse lands in Washington, DC at Washington Dulles International Airport as part of its journey across the United States. Secretary Ernest Moniz speaks about how advancements like those at the Department of Energy are leading the way for innovations like the solar-powered plane. Footage of the solar-powered plane courtesy of Solar Impulse.

  19. Surface modification of high temperature iron alloys

    DOEpatents

    Park, Jong-Hee

    1995-01-01

    A method and article of manufacture of a coated iron based alloy. The method includes providing an iron based alloy substrate, depositing a silicon containing layer on the alloy surface while maintaining the alloy at a temperature of about 700.degree. C.-1200.degree. C. to diffuse silicon into the alloy surface and exposing the alloy surface to an ammonia atmosphere to form a silicon/oxygen/nitrogen containing protective layer on the iron based alloy.

  20. Surface modification of high temperature iron alloys

    DOEpatents

    Park, J.H.

    1995-06-06

    A method and article of manufacture of a coated iron based alloy are disclosed. The method includes providing an iron based alloy substrate, depositing a silicon containing layer on the alloy surface while maintaining the alloy at a temperature of about 700--1200 C to diffuse silicon into the alloy surface and exposing the alloy surface to an ammonia atmosphere to form a silicon/oxygen/nitrogen containing protective layer on the iron based alloy. 13 figs.

  1. Alloyed coatings for dispersion strengthened alloys

    NASA Technical Reports Server (NTRS)

    Wermuth, F. R.; Stetson, A. R.

    1971-01-01

    Processing techniques were developed for applying several diffusion barriers to TD-Ni and TD-NiCr. Barrier coated specimens of both substrates were clad with Ni-Cr-Al and Fe-Cr-Al alloys and diffusion annealed in argon. Measurement of the aluminum distribution after annealing showed that, of the readily applicable diffusion barriers, a slurry applied tungsten barrier most effectively inhibited the diffusion of aluminum from the Ni-Cr-Al clad into the TD-alloy substrates. No barrier effectively limited interdiffusion of the Fe-Cr-Al clad with the substrates. A duplex process was then developed for applying Ni-Cr-Al coating compositions to the tungsten barrier coated substrates. A Ni-(16 to 32)Cr-3Si modifier was applied by slurry spraying and firing in vacuum, and was then aluminized by a fusion slurry process. Cyclic oxidation tests at 2300 F resulted in early coating failure due to inadequate edge coverage and areas of coating porosity. EMP analysis showed that oxidation had consumed 70 to 80 percent of the aluminum in the coating in less than 50 hours.

  2. Solar Training Network and Solar Ready Vets

    SciTech Connect

    Dalstrom, Tenley Ann

    2016-09-14

    In 2016, the White House announced the Solar Ready Vets program, funded under DOE's SunShot initiative would be administered by The Solar Foundation to connect transitioning military personnel to solar training and employment as they separate from service. This presentation is geared to informing and recruiting employer partners for the Solar Ready Vets program, and the Solar Training Network. It describes the programs, and the benefits to employers that choose to connect to the programs.

  3. Concentrated solar power generation using solar receivers

    SciTech Connect

    Anderson, Bruce N.; Treece, William Dean; Brown, Dan

    Inventive concentrated solar power systems using solar receivers, and related devices and methods, are generally described. Low pressure solar receivers are provided that function to convert solar radiation energy to thermal energy of a working fluid, e.g., a working fluid of a power generation or thermal storage system. In some embodiments, low pressure solar receivers are provided herein that are useful in conjunction with gas turbine based power generation systems.

  4. Solar cells

    NASA Astrophysics Data System (ADS)

    Treble, F. C.

    1980-11-01

    The history, state of the art, and future prospects of solar cells are reviewed. Solar cells are already competitive in a wide range of low-power applications, and during the 1980's they are expected to become cheaper to run than diesel or gasoline generators, the present mainstay of isolated communities. At this stage they will become attractive for water pumping, irrigation, and rural electrification, particularly in developing countries. With further cost reduction, they may be used to augment grid supplies in domestic, commercial, institutional, and industrial premises. Cost reduction to the stage where photovoltaics becomes economic for large-scale power generation in central stations depends on a technological breakthrough in the development of thin-film cells. DOE aims to reach this goal by 1990, so that by the end of the century about 20% of the estimated annual additions to their electrical generating capacity will be photovoltaic.

  5. Solar Arches

    NASA Image and Video Library

    2017-12-08

    The magnetic field lines between a pair of active regions formed a beautiful set of swaying arches, seen in this footage captured by NASA’s Solar Dynamics Observatory on April 24-26, 2017. The arches are traced out by charged particles spinning along the magnetic field lines. These arches, which form a connection between regions of opposite magnetic polarity, are visible in exquisite detail in this wavelength of extreme ultraviolet light. Extreme ultraviolet light is typically invisible to our eyes, but is colorized here in gold. Read more: go.nasa.gov/2pGgYZt NASA image use policy. NASA Goddard Space Flight Center enables NASA’s mission through four scientific endeavors: Earth Science, Heliophysics, Solar System Exploration, and Astrophysics. Goddard plays a leading role in NASA’s accomplishments by contributing compelling scientific knowledge to advance the Agency’s mission. Follow us on Twitter Like us on Facebook Find us on Instagram

  6. Quinary metallic glass alloys

    DOEpatents

    Lin, Xianghong; Johnson, William L.

    1998-01-01

    At least quinary alloys form metallic glass upon cooling below the glass transition temperature at a rate less than 10.sup.3 K/s. Such alloys comprise zirconium and/or hafnium in the range of 45 to 65 atomic percent, titanium and/or niobium in the range of 4 to 7.5 atomic percent, and aluminum and/or zinc in the range of 5 to 15 atomic percent. The balance of the alloy compositions comprise copper, iron, and cobalt and/or nickel. The composition is constrained such that the atomic percentage of iron is less than 10 percent. Further, the ratio of copper to nickel and/or cobalt is in the range of from 1:2 to 2:1. The alloy composition formula is: (Zr,Hf).sub.a (Al,Zn).sub.b (Ti,Nb).sub.c (Cu.sub.x Fe.sub.y (Ni,Co).sub.z).sub.d wherein the constraints upon the formula are: a ranges from 45 to 65 atomic percent, b ranges from 5 to 15 atomic percent, c ranges from 4 to 7.5 atomic percent, d comprises the balance, d.multidot.y is less than 10 atomic percent, and x/z ranges from 0.5 to 2.

  7. Shape Memory Alloy Actuator

    NASA Technical Reports Server (NTRS)

    Baumbick, Robert J. (Inventor)

    2000-01-01

    The present invention discloses and teaches a unique, remote optically controlled micro actuator particularly suitable for aerospace vehicle applications wherein hot gas, or in the alternative optical energy, is employed as the medium by which shape memory alloy elements are activated. In gas turbine powered aircraft the source of the hot gas may be the turbine engine compressor or turbine sections.

  8. Shape Memory Alloy Actuator

    NASA Technical Reports Server (NTRS)

    Baumbick, Robert J. (Inventor)

    2002-01-01

    The present invention discloses and teaches a unique, remote optically controlled micro actuator particularly suitable for aerospace vehicle applications wherein hot gas, or in the alternative optical energy, is employed as the medium by which shape memory alloy elements are activated. In gas turbine powered aircraft the source of the hot gas may be the turbine engine compressor or turbine sections.

  9. Quinary metallic glass alloys

    DOEpatents

    Lin, X.; Johnson, W.L.

    1998-04-07

    At least quinary alloys form metallic glass upon cooling below the glass transition temperature at a rate less than 10{sup 3}K/s. Such alloys comprise zirconium and/or hafnium in the range of 45 to 65 atomic percent, titanium and/or niobium in the range of 4 to 7.5 atomic percent, and aluminum and/or zinc in the range of 5 to 15 atomic percent. The balance of the alloy compositions comprise copper, iron, and cobalt and/or nickel. The composition is constrained such that the atomic percentage of iron is less than 10 percent. Further, the ratio of copper to nickel and/or cobalt is in the range of from 1:2 to 2:1. The alloy composition formula is: (Zr,Hf){sub a}(Al,Zn){sub b}(Ti,Nb){sub c}(Cu{sub x}Fe{sub y}(Ni,Co){sub z}){sub d} wherein the constraints upon the formula are: a ranges from 45 to 65 atomic percent, b ranges from 5 to 15 atomic percent, c ranges from 4 to 7.5 atomic percent, d comprises the balance, d{hor_ellipsis}y is less than 10 atomic percent, and x/z ranges from 0.5 to 2.

  10. SOLAR - ASTRONOMY

    NASA Image and Video Library

    1973-09-09

    S73-33788 (10 June 1973) --- The solar eruption of June 10, 1973, is seen in this spectroheliogram obtained during the first manned Skylab mission (Skylab 2), with the SO82A experiment, an Apollo Telescope Mount (ATM) component covering the wavelength region from 150 to 650 angstroms (EUV). The solid disk in the center was produced from 304 angstrom ultraviolet light from He + ions. At the top of this image a great eruption is visible extending more than one-third of a solar radius from the sun's surface. This eruption preceded the formation of an enormous coronal bubble which extended a distance of several radii from the sun's surface, and which was observed with the coronagraph aboard Skylab. In contrast, the Fe XV image at 285 angstrom just to the right of the 304 angstrom image does not show this event. Instead, it shows the bright emission from a magnetic region in the lower corona. In this picture, solar north is to the right, and east is up. The wavelength scale increases to the left. The U.S. Naval Research Laboratory is principal investigator in charge of the SO82 experiment. Photo credit: NASA

  11. Solar chameleons

    SciTech Connect

    Brax, Philippe; Zioutas, Konstantin

    2010-08-15

    We analyze the creation of chameleons deep inside the Sun (R{approx}0.7R{sub sun}) and their subsequent conversion to photons near the magnetized surface of the Sun. We find that the spectrum of the regenerated photons lies in the soft x-ray region, hence addressing the solar corona problem. Moreover, these back-converted photons originating from chameleons have an intrinsic difference with regenerated photons from axions: their relative polarizations are mutually orthogonal before Compton interacting with the surrounding plasma. Depending on the photon-chameleon coupling and working in the strong coupling regime of the chameleons to matter, we find that the induced photon flux, whenmore » regenerated resonantly with the surrounding plasma, coincides with the solar flux within the soft x-ray energy range. Moreover, using the soft x-ray solar flux as a prior, we find that with a strong enough photon-chameleon coupling, the chameleons emitted by the Sun could lead to a regenerated photon flux in the CAST magnetic pipes, which could be within the reach of CAST with upgraded detector performance. Then, axion helioscopes have thus the potential to detect and identify particle candidates for the ubiquitous dark energy in the Universe.« less

  12. Solar Sails

    NASA Technical Reports Server (NTRS)

    Young, Roy

    2006-01-01

    The Solar Sail Propulsion investment area has been one of the three highest priorities within the In-Space Propulsion Technology (ISPT) Project. In the fall of 2003, the NASA Headquarters' Science Mission Directorate provided funding and direction to mature the technology as far as possible through ground research and development from TRL 3 to 6 in three years. A group of experts from government, industry, and academia convened in Huntsville, Alabama to define technology gaps between what was needed for science missions to the inner solar system and the current state of the art in ultra1ightweight materials and gossamer structure design. This activity set the roadmap for development. The centerpiece of the development would be the ground demonstration of scalable solar sail systems including masts, sails, deployment mechanisms, and attitude control hardware and software. In addition, new materials would be subjected to anticipated space environments to quantify effects and assure mission life. Also, because solar sails are huge structures, and it is not feasible to validate the technology by ground test at full scale, a multi-discipline effort was established to develop highly reliable analytical models to serve as mission assurance evidence in future flight program decision-making. Two separate contractor teams were chosen to develop the SSP System Ground Demonstrator (SGD). After a three month conceptual mission/system design phase, the teams developed a ten meter diameter pathfinder set of hardware and subjected it to thermal vacuum tests to compare analytically predicted structural behavior with measured characteristics. This process developed manufacturing and handling techniques and refined the basic design. In 2005, both contractor teams delivered 20 meter, four quadrant sail systems to the largest thermal vacuum chamber in the world in Plum Brook, Ohio, and repeated the tests. Also demonstrated was the deployment and articulation of attitude control

  13. Solar Sail Spaceflight Simulation

    NASA Technical Reports Server (NTRS)

    Lisano, Michael; Evans, James; Ellis, Jordan; Schimmels, John; Roberts, Timothy; Rios-Reyes, Leonel; Scheeres, Daniel; Bladt, Jeff; Lawrence, Dale; Piggott, Scott

    2007-01-01

    The Solar Sail Spaceflight Simulation Software (S5) toolkit provides solar-sail designers with an integrated environment for designing optimal solar-sail trajectories, and then studying the attitude dynamics/control, navigation, and trajectory control/correction of sails during realistic mission simulations. Unique features include a high-fidelity solar radiation pressure model suitable for arbitrarily-shaped solar sails, a solar-sail trajectory optimizer, capability to develop solar-sail navigation filter simulations, solar-sail attitude control models, and solar-sail high-fidelity force models.

  14. Nanostructured Solar Cells.

    PubMed

    Chen, Guanying; Ning, Zhijun; Ågren, Hans

    2016-08-09

    We are glad to announce the Special Issue "Nanostructured Solar Cells", published in Nanomaterials. This issue consists of eight articles, two communications, and one review paper, covering major important aspects of nanostructured solar cells of varying types. From fundamental physicochemical investigations to technological advances, and from single junction solar cells (silicon solar cell, dye sensitized solar cell, quantum dots sensitized solar cell, and small molecule organic solar cell) to tandem multi-junction solar cells, all aspects are included and discussed in this issue to advance the use of nanotechnology to improve the performance of solar cells with reduced fabrication costs.

  15. Solar Innovator | Alta Devices

    ScienceCinema

    Mattos, Laila; Le, Minh

    2017-12-09

    Selected to participate in the Energy Department's SunShot Initiative, Alta Devices produces solar cells that convert sunlight into electricity at world record-breaking levels of efficiency. Through its innovative solar technology Alta is helping bring down the cost of solar. Learn more about the Energy Department's efforts to advance solar technology at energy.gov/solar .

  16. Solar energy collector

    DOEpatents

    Brin, Raymond L.; Pace, Thomas L.

    1978-01-01

    The invention relates to a solar energy collector comprising solar energy absorbing material within chamber having a transparent wall, solar energy being transmitted through the transparent wall, and efficiently absorbed by the absorbing material, for transfer to a heat transfer fluid. The solar energy absorbing material, of generally foraminous nature, absorbs and transmits the solar energy with improved efficiency.

  17. A fractal process of hydrogen diffusion in a-Si:H with exponential energy distribution

    NASA Astrophysics Data System (ADS)

    Hikita, Harumi; Ishikawa, Hirohisa; Morigaki, Kazuo

    2017-04-01

    Hydrogen diffusion in a-Si:H with exponential distribution of the states in energy exhibits the fractal structure. It is shown that a probability P(t) of the pausing time t has a form of tα (α: fractal dimension). It is shown that the fractal dimension α = Tr/T0 (Tr: hydrogen temperature, T0: a temperature corresponding to the width of exponential distribution of the states in energy) is in agreement with the Hausdorff dimension. A fractal graph for the case of α ≤ 1 is like the Cantor set. A fractal graph for the case of α > 1 is like the Koch curves. At α = ∞, hydrogen migration exhibits Brownian motion. Hydrogen diffusion in a-Si:H should be the fractal process.

  18. H and H2 NMR properties in amorphous hydrogenated silicon (a-Si:H)

    NASA Astrophysics Data System (ADS)

    Lee, Sook

    1986-07-01

    It is shown that the basic NMR properties of ortho-H2 molecules with a rotational angular momentum J and a spin angular momentum I under the influence of a completely asymmetric crystalline field in an amorphous matrix can be described by an effective nuclear spin Hamiltonian which contains only the nuclear spin angular momentum operators (Ii), but is independent of the molecular rotational angular momentum operators (Ji). By directly applying the existing magnetic-resonance theories to this effective nuclear spin Hamiltonian, a simple description is presented for various static and dynamic NMR properties of the ortho-H2 NMR centers in amorphous hydrogenated silicon (a-Si:H), thereby resolving many difficulties and uncertainties encountered in understanding and explaining the H and H2 NMR observations in a-Si:H.

  19. H2O incorporation in the phosphorene/a-SiO2 interface: a first-principles study

    NASA Astrophysics Data System (ADS)

    Scopel, Wanderlã L.; Souza, Everson S.; Miwa, R. H.

    2017-02-01

    Based on first-principles calculations, we investigate (i) the energetic stability and electronic properties of single-layer phosphorene (SLP) adsorbed on an amorphous SiO2 surface (SLP/a-SiO2), and (ii) the further incorporation of water molecules at the phosphorene/a-SiO2 interface. In (i), we find that the phosphorene sheet binds to a-SiO2 through van der Waals interactions, even in the presence of oxygen vacancies on the surface. The SLP/a-SiO2 system presents a type-I band alignment, with the valence (conduction) band maximum (minimum) of the phosphorene lying within the energy gap of the a-SiO2 substrate. The structure and the surface-potential corrugations promote the formation of electron-rich and electron-poor regions on the phosphorene sheet and at the SLP/a-SiO2 interface. Such charge density puddles are strengthened by the presence of oxygen vacancies in a-SiO2. In (ii), because of the amorphous structure of the surface, we consider a number of plausible geometries for H2O embedded in the SLP/a-SiO2 interface. There is an energetic preference for the formation of hydroxyl (OH) groups on the a-SiO2 surface. Meanwhile, in the presence of oxygenated water or interstitial oxygen in the phosphorene sheet, we observe the formation of metastable OH bonded to the phosphorene, and the formation of energetically stable P-O-Si chemical bonds at the SLP/a-SiO2 interface. Further x-ray absorption spectra simulations are performed, which aim to provide additional structural/electronic information on the oxygen atoms forming hydroxyl groups or P-O-Si chemical bonds at the interface region.

  20. H2O incorporation in the phosphorene/a-SiO2 interface: a first-principles study.

    PubMed

    Scopel, Wanderlã L; Souza, Everson S; Miwa, R H

    2017-02-22

    Based on first-principles calculations, we investigate (i) the energetic stability and electronic properties of single-layer phosphorene (SLP) adsorbed on an amorphous SiO 2 surface (SLP/a-SiO 2 ), and (ii) the further incorporation of water molecules at the phosphorene/a-SiO 2 interface. In (i), we find that the phosphorene sheet binds to a-SiO 2 through van der Waals interactions, even in the presence of oxygen vacancies on the surface. The SLP/a-SiO 2 system presents a type-I band alignment, with the valence (conduction) band maximum (minimum) of the phosphorene lying within the energy gap of the a-SiO 2 substrate. The structure and the surface-potential corrugations promote the formation of electron-rich and electron-poor regions on the phosphorene sheet and at the SLP/a-SiO 2 interface. Such charge density puddles are strengthened by the presence of oxygen vacancies in a-SiO 2 . In (ii), because of the amorphous structure of the surface, we consider a number of plausible geometries for H 2 O embedded in the SLP/a-SiO 2 interface. There is an energetic preference for the formation of hydroxyl (OH) groups on the a-SiO 2 surface. Meanwhile, in the presence of oxygenated water or interstitial oxygen in the phosphorene sheet, we observe the formation of metastable OH bonded to the phosphorene, and the formation of energetically stable P-O-Si chemical bonds at the SLP/a-SiO 2 interface. Further x-ray absorption spectra simulations are performed, which aim to provide additional structural/electronic information on the oxygen atoms forming hydroxyl groups or P-O-Si chemical bonds at the interface region.

  1. Concentrating Solar Power Projects - Xina Solar One | Concentrating Solar

    Science.gov Websites

    Power | NREL Xina Solar One Abengoa has been selected by the Department of Energy (DOE) of South Africa to develop Xina Solar One, a 100 MW parabolic trough plant with a five-hour thermal energy with Abengoa's plant KaXu Solar One that is currently under construction in the country. Xina Solar One

  2. Assessment of laser ablation techniques in a-si technologies for position-sensor development

    NASA Astrophysics Data System (ADS)

    Molpeceres, C.; Lauzurica, S.; Ocana, J. L.; Gandia, J. J.; Urbina, L.; Carabe, J.

    2005-07-01

    Laser micromachining of semiconductor and Transparent Conductive Oxides (TCO) materials is very important for the practical applications in photovoltaic industry. In particular, a problem of controlled ablation of those materials with minimum of debris and small heat affected zone is one of the most vital for the successful implementation of laser micromachining. In particular, selective ablation of thin films for the development of new photovoltaic panels and sensoring devices based on amorphous silicon (a-Si) is an emerging field, in which laser micromachining systems appear as appropriate tools for process development and device fabrication. In particular, a promising application is the development of purely photovoltaic position sensors. Standard p-i-n or Schottky configurations using Transparent Conductive Oxides (TCO), a-Si and metals are especially well suited for these applications, appearing selective laser ablation as an ideal process for controlled material patterning and isolation. In this work a detailed study of laser ablation of a widely used TCO, Indium-tin-oxide (ITO), and a-Si thin films of different thicknesses is presented, with special emphasis on the morphological analysis of the generated grooves. The profiles of ablated grooves have been studied in order to determine the best processing conditions, i.e. laser pulse energy and wavelength, and to asses this technology as potentially competitive to standard photolithographic processes. The encouraging results obtained, with well defined ablation grooves having thicknesses in the order of 10 μm both in ITO and a-Si, open up the possibility of developing a high-performance double Schottky photovoltaic matrix position sensor.

  3. Structure of dental gallium alloys.

    PubMed

    Herø, H; Simensen, C J; Jørgensen, R B

    1996-07-01

    The interest in gallium alloys as a replacement for amalgam has increased in recent years due to the risk of environmental pollution from amalgam. Alloy powders with compositions close to those for alloys of amalgam are mixed with a liquid gallium alloy. The mix is condensed into a prepared cavity in much the same way as for amalgam. The aim of the present work was to study the structure of: (1) two commercial alloy powders containing mainly silver, tin and copper, and (2) the phases formed by mixing these powders with a liquid alloy of gallium, indium and tin. One of the alloy powders contained 9 wt% palladium. Cross-sections of cylindrical specimens made by these gallium mixes were investigated by scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction. Discrete grains of the following phases were found to be present in both gallium alloys: hexagonal Ag2Ga, tetragonal Cu(Pd)Ga2, cubic Ag9In4 and tetragonal beta-Sn. Indications of hexagonal or orthorhombic Ag2Sn were found in the remaining, unreacted alloy particles. In the palladium-containing alloy the X-ray reflections indicate a minor fraction of cubic Cu9Ga4 in addition to the Cu(Pd)Ga2 phase. Particles of beta-Sn are probably precipitated because Sn-Ga phases cannot be formed according to the binary phase diagram.

  4. Grindability of dental magnetic alloys.

    PubMed

    Hayashi, Eisei; Kikuchi, Masafumi; Okuno, Osamu; Kimura, Kohei

    2005-06-01

    In this study, the grindability of cast magnetic alloys (Fe-Pt-Nb magnetic alloy and magnetic stainless steel) was evaluated and compared with that of conventional dental casting alloys (Ag-Pd-Au alloy, Type 4 gold alloy, and cobalt-chromium alloy). Grindability was evaluated in terms of grinding rate (i.e., volume of metal removed per minute) and grinding ratio (i.e., volume ratio of metal removed compared to wheel material lost). Solution treated Fe-Pt-Nb magnetic alloy had a significantly higher grinding rate than the aged one at a grinding speed of 750-1500 m x min(-1). At 500 m x min(-1), there were no significant differences in grinding rate between solution treated and aged Fe-Pt-Nb magnetic alloys. At a lower speed of 500 m x min(-1) or 750 m x min(-1), it was found that the grinding rates of aged Fe-Pt-Nb magnetic alloy and stainless steel were higher than those of conventional casting alloys.

  5. Advanced ordered intermetallic alloy deployment

    SciTech Connect

    Liu, C.T.; Maziasz, P.J.; Easton, D.S.

    1997-04-01

    The need for high-strength, high-temperature, and light-weight materials for structural applications has generated a great deal of interest in ordered intermetallic alloys, particularly in {gamma}-based titanium aluminides {gamma}-based TiAl alloys offer an attractive mix of low density ({approximately}4g/cm{sup 3}), good creep resistance, and high-temperature strength and oxidation resistance. For rotating or high-speed components. TiAl also has a high damping coefficient which minimizes vibrations and noise. These alloys generally contain two phases. {alpha}{sub 2} (DO{sub 19} structure) and {gamma} (L 1{sub 0}), at temperatures below 1120{degrees}C, the euticoid temperature. The mechanical properties of TiAl-based alloys are sensitive to both alloy compositionsmore » and microstructure. Depending on heat-treatment and thermomechanical processing, microstructures with near equiaxed {gamma}, a duplex structure (a mix of the {gamma} and {alpha}{sub 2} phases) can be developed in TiAl alloys containing 45 to 50 at. % Al. The major concern for structural use of TiAl alloys is their low ductility and poor fracture resistance at ambient temperatures. The purpose of this project is to improve the fracture toughness of TiAl-based alloys by controlling alloy composition, microstructure and thermomechanical treatment. This work is expected to lead to the development of TiAl alloys with significantly improved fracture toughness and tensile ductility for structural use.« less

  6. Radiation damage in a-SiO 2 exposed to intense positron pulses

    NASA Astrophysics Data System (ADS)

    Cassidy, D. B.; Mills, A. P.

    2007-08-01

    In addition to its numerous technological applications amorphous silica (a-SiO 2) is also well suited to the creation and study of exotic atoms such as positronium (Ps) and muonium. In particular, a dense Ps gas may be created by implanting an intense positron pulse into a porous a-SiO 2 sample. However, such positron pulses can constitute a significant dose of radiation, which may damage the sample. We have observed a reduction in the amount of Ps formed in a thin film of porous a-SiO 2 following irradiation by intense positron pulses, indicating the creation of paramagnetic centers. The data show that the primary effect of the irradiation is the inhibition of Ps formation, with no significant change in the subsequent Ps lifetime, from which we deduce that damage centers are created primarily in the bulk material and not on the internal surfaces of the pores, where they would be accessible to the long-lived Ps. We find that the damage is reversible, and that the system may be returned to its original state by heating to 700 K. The implications of these results for experiments with dense Ps in porous materials are discussed.

  7. Low temperature surface passivation of crystalline silicon and its application to interdigitated back contact silicon heterojunction (ibc-shj) solar cell

    NASA Astrophysics Data System (ADS)

    Shu, Zhan

    With the absence of shading loss together with improved quality of surface passivation introduced by low temperature processed amorphous silicon crystalline silicon (a-Si:H/c-Si) heterojunction, the interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell exhibits a potential for higher conversion efficiency and lower cost than a traditional front contact diffused junction solar cell. In such solar cells, the front surface passivation is of great importance to achieve both high open-circuit voltage (Voc) and short-circuit current (Jsc). Therefore, the motivation of this work is to develop a low temperature processed structure for the front surface passivation of IBC-SHJ solar cells, which must have an excellent and stable passivation quality as well as a good anti-reflection property. Four different thin film materials/structures were studied and evaluated for this purpose, namely: amorphous silicon nitride (a-SiNx:H), thick amorphous silicon film (a-Si:H), amorphous silicon/silicon nitride/silicon carbide (a-Si:H/a-SiN x:H/a-SiC:H) stack structure with an ultra-thin a-Si:H layer, and zinc sulfide (ZnS). It was demonstrated that the a-Si:H/a-SiNx:H/a-SiC:H stack surpasses other candidates due to both of its excellent surface passivation quality (SRV<5 cm/s) and lower absorption losses. The low recombination rate at the stack structure passivated c-Si surface is found to be resulted from (i) field effect passivation due to the positive fixed charge (Q fix~1x1011 cm-2 with 5 nm a-Si:H layer) in a-SiNx:H as measured from capacitance-voltage technique, and (ii) reduced defect state density (mid-gap Dit~4x1010 cm-2eV-1) at a-Si:H/c-Si interface provided by a 5 nm thick a-Si:H layer, as characterized by conductance-frequency measurements. Paralleled with the experimental studies, a computer program was developed in this work based on the extended Shockley-Read-Hall (SRH) model of surface recombination. With the help of this program, the experimental

  8. Concentrating Solar Power Projects - Khi Solar One | Concentrating Solar

    Science.gov Websites

    Power | NREL Khi Solar One This page provides information on Khi Solar One, a concentrating . Status Date: February 8, 2016 Project Overview Project Name: Khi Solar One Country: South Africa Location

  9. Ductile metal alloys, method for making ductile metal alloys

    SciTech Connect

    Cockeram, Brian V.

    A ductile alloy is provided comprising molybdenum, chromium and aluminum, wherein the alloy has a ductile to brittle transition temperature of about 300 C after radiation exposure. The invention also provides a method for producing a ductile alloy, the method comprising purifying a base metal defining a lattice; and combining the base metal with chromium and aluminum, whereas the weight percent of chromium is sufficient to provide solute sites within the lattice for point defect annihilation.

  10. Investigation of back surface fields effect on bifacial solar cells

    NASA Astrophysics Data System (ADS)

    Sepeai, Suhaila; Sulaiman, M. Y.; Sopian, Kamaruzzaman; Zaidi, Saleem H.

    2012-11-01

    A bifacial solar cell, in contrast with a conventional monofacial solar cell, produces photo-generated current from both front and back sides. Bifacial solar cell is an attractive candidate for enhancing photovoltaic (PV) market competitiveness as well as supporting the current efforts to increase efficiency and lower material costs. This paper reports on the fabrication of bifacial solar cells using phosphorus-oxytrichloride (POCl3) emitter formation on p-type, nanotextured silicon (Si) wafer. Backside surface field was formed through Al-diffusion using conventional screen-printing process. Bifacial solar cells with a structure of n+pp+ with and without back surface field (BSF) were fabricated in which silicon nitride (SiN) anti reflection and passivation films were coated on both sides, followed by screen printing of Argentum (Ag) and Argentum/Aluminum (Ag/Al) on front and back contacts, respectively. Bifacial solar cells without BSF exhibited open circuit voltage (VOC) of 535 mV for front and 480 mV for back surface. With Al-alloyed BSF bifacial solar cells, the VOC improved to 580 mV for the front surface and 560 mV for the back surface. Simulation of bifacial solar cells using PC1D and AFORS software demonstrated good agreement with experimental results. Simulations showed that best bifacial solar cells are achieved through a combination of high lifetime wafer, low recombination back surface field, reduced contact resistance, and superior surface passivation.

  11. Filler metal alloy for welding cast nickel aluminide alloys

    DOEpatents

    Santella, Michael L.; Sikka, Vinod K.

    1998-01-01

    A filler metal alloy used as a filler for welding east nickel aluminide alloys contains from about 15 to about 17 wt. % chromium, from about 4 to about 5 wt. % aluminum, equal to or less than about 1.5 wt. % molybdenum, from about 1 to about 4.5 wt. % zirconium, equal to or less than about 0.01 wt. % yttrium, equal to or less than about 0.01 wt. % boron and the balance nickel. The filler metal alloy is made by melting and casting techniques such as are melting the components of the filler metal alloy and east in copper chill molds.

  12. Filler metal alloy for welding cast nickel aluminide alloys

    DOEpatents

    Santella, M.L.; Sikka, V.K.

    1998-03-10

    A filler metal alloy used as a filler for welding cast nickel aluminide alloys contains from about 15 to about 17 wt. % chromium, from about 4 to about 5 wt. % aluminum, equal to or less than about 1.5 wt. % molybdenum, from about 1 to about 4.5 wt. % zirconium, equal to or less than about 0.01 wt. % yttrium, equal to or less than about 0.01 wt. % boron and the balance nickel. The filler metal alloy is made by melting and casting techniques such as are melting the components of the filler metal alloy and cast in copper chill molds. 3 figs.

  13. Solar Neutrino Problem

    DOE R&D Accomplishments Database

    Davis, R. Jr.; Evans, J. C.; Cleveland, B. T.

    1978-04-28

    A summary of the results of the Brookhaven solar neutrino experiment is given and discussed in relation to solar model calculations. A review is given of the merits of various new solar neutrino detectors that were proposed.

  14. Solar Electricity

    NASA Technical Reports Server (NTRS)

    1988-01-01

    ARCO Solar manufactures PV Systems tailored to a broad variety of applications. PV arrays are routinely used at remote communications installations to operate large microwave repeaters, TV and radio repeaters rural telephone, and small telemetry systems that monitor environmental conditions. Also used to power agricultural water pumping systems, to provide electricity for isolated villages and medical clinics, for corrosion protection for pipelines and bridges, to power railroad signals, air/sea navigational aids, and for many types of military systems. ARCO is now moving into large scale generation for utilities.

  15. Electrical transport in transverse direction through silicon carbon alloy multilayers containing regular size silicon quantum dots

    NASA Astrophysics Data System (ADS)

    Mandal, Aparajita; Kole, Arindam; Dasgupta, Arup; Chaudhuri, Partha

    2016-11-01

    Electrical transport in the transverse direction has been studied through a series of hydrogenated silicon carbon alloy multilayers (SiC-MLs) deposited by plasma enhanced chemical vapor deposition method. Each SiC-ML consists of 30 cycles of the alternating layers of a nearly amorphous silicon carbide (a-SiC:H) and a microcrystalline silicon carbide (μc-SiC:H) that contains high density of silicon quantum dots (Si-QDs). A detailed investigation by cross sectional TEM reveals preferential growth of densely packed Si-QDs of regular sizes ∼4.8 nm in diameter in a vertically aligned columnar structure within the SiC-ML. More than six orders of magnitude increase in transverse current through the SiC-ML structure were observed for decrease in the a-SiC:H layer thickness from 13 nm to 2 nm. The electrical transport mechanism was established to be a combination of grain boundary or band tail hopping and Frenkel-Poole (F-P) type conduction depending on the temperature and externally applied voltage ranges. Evaluation of trap concentration within the multilayer structures from the fitted room temperature current voltage characteristics by F-P function shows reduction up-to two orders of magnitude indicating an improvement in the short range order in the a-SiC:H matrix for decrease in the thickness of a-SiC:H layer.

  16. Two phase titanium aluminide alloy

    DOEpatents

    Deevi, Seetharama C.; Liu, C. T.

    2001-01-01

    A two-phase titanic aluminide alloy having a lamellar microstructure with little intercolony structures. The alloy can include fine particles such as boride particles at colony boundaries and/or grain boundary equiaxed structures. The alloy can include alloying additions such as .ltoreq.10 at % W, Nb and/or Mo. The alloy can be free of Cr, V, Mn, Cu and/or Ni and can include, in atomic %, 45 to 55% Ti, 40 to 50% Al, 1 to 5% Nb, 0.3 to 2% W, up to 1% Mo and 0.1 to 0.3% B. In weight %, the alloy can include 57 to 60% Ti, 30 to 32% Al, 4 to 9% Nb, up to 2% Mo, 2 to 8% W and 0.02 to 0.08% B.

  17. TERNARY ALLOY-CONTAINING PLUTONIUM

    DOEpatents

    Waber, J.T.

    1960-02-23

    Ternary alloys of uranium and plutonium containing as the third element either molybdenum or zirconium are reported. Such alloys are particularly useful as reactor fuels in fast breeder reactors. The alloy contains from 2 to 25 at.% of molybdenum or zirconium, the balance being a combination of uranium and plutonium in the ratio of from 1 to 9 atoms of uranlum for each atom of plutonium. These alloys are prepared by melting the constituent elements, treating them at an elevated temperature for homogenization, and cooling them to room temperature, the rate of cooling varying with the oomposition and the desired phase structure. The preferred embodiment contains 12 to 25 at.% of molybdenum and is treated by quenching to obtain a body centered cubic crystal structure. The most important advantage of these alloys over prior binary alloys of both plutonium and uranium is the lack of cracking during casting and their ready machinability.

  18. Surface Segregation in Ternary Alloys

    NASA Technical Reports Server (NTRS)

    Good, Brian; Bozzolo, Guillermo H.; Abel, Phillip B.

    2000-01-01

    Surface segregation profiles of binary (Cu-Ni, Au-Ni, Cu-Au) and ternary (Cu-Au-Ni) alloys are determined via Monte Carlo-Metropolis computer simulations using the BFS method for alloys for the calculation of the energetics. The behavior of Cu or Au in Ni is contrasted with their behavior when both are present. The interaction between Cu and Au and its effect on the segregation profiles for Cu-Au-Ni alloys is discussed.

  19. Amorphous metal alloy and composite

    DOEpatents

    Wang, Rong; Merz, Martin D.

    1985-01-01

    Amorphous metal alloys of the iron-chromium and nickel-chromium type have excellent corrosion resistance and high temperature stability and are suitable for use as a protective coating on less corrosion resistant substrates. The alloys are stabilized in the amorphous state by one or more elements of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten. The alloy is preferably prepared by sputter deposition.

  20. The Solidification of Multicomponent Alloys

    PubMed Central

    Boettinger, William J.

    2017-01-01

    Various topics taken from the author’s research portfolio that involve multicomponent alloy solidification are reviewed. Topics include: ternary eutectic solidification and Scheil-Gulliver paths in ternary systems. A case study of the solidification of commercial 2219 aluminum alloy is described. Also described are modifications of the Scheil-Gulliver analysis to treat dendrite tip kinetics and solid diffusion for multicomponent alloys. PMID:28819348

  1. Shape memory alloy actuator

    DOEpatents

    Varma, Venugopal K.

    2001-01-01

    An actuator for cycling between first and second positions includes a first shaped memory alloy (SMA) leg, a second SMA leg. At least one heating/cooling device is thermally connected to at least one of the legs, each heating/cooling device capable of simultaneously heating one leg while cooling the other leg. The heating/cooling devices can include thermoelectric and/or thermoionic elements.

  2. Duct and cladding alloy

    DOEpatents

    Korenko, Michael K.

    1983-01-01

    An austenitic alloy having good thermal stability and resistance to sodium corrosion at 700.degree. C. consists essentially of 35-45% nickel 7.5-14% chromium 0.8-3.2% molybdenum 0.3-1.0% silicon 0.2-1.0% manganese 0-0.1% zirconium 2.0-3.5% titanium 1.0-2.0% aluminum 0.02-0.1% carbon 0-0.01% boron and the balance iron.

  3. Nanocrystal dispersed amorphous alloys

    NASA Technical Reports Server (NTRS)

    Perepezko, John H. (Inventor); Allen, Donald R. (Inventor); Foley, James C. (Inventor)

    2001-01-01

    Compositions and methods for obtaining nanocrystal dispersed amorphous alloys are described. A composition includes an amorphous matrix forming element (e.g., Al or Fe); at least one transition metal element; and at least one crystallizing agent that is insoluble in the resulting amorphous matrix. During devitrification, the crystallizing agent causes the formation of a high density nanocrystal dispersion. The compositions and methods provide advantages in that materials with superior properties are provided.

  4. Solar Heating and Cooling

    ERIC Educational Resources Information Center

    Duffie, John A.; Beckman, William A.

    1976-01-01

    Describes recent research that has made solar energy economically competitive with other energy sources. Includes solar energy building architecture, storage systems, and economic production data. (MLH)

  5. Solar Energy Systems

    NASA Astrophysics Data System (ADS)

    1984-01-01

    Calibrated in kilowatt hours per square meter, the solar counter produced by Dodge Products, Inc. provides a numerical count of the solar energy that has accumulated on a surface. Solar energy sensing, measuring and recording devices in corporate solar cell technology developed by Lewis Research Center. Customers for their various devices include architects, engineers and others engaged in construction and operation of solar energy facilities; manufacturers of solar systems or solar related products, such as glare reducing windows; and solar energy planners in federal and state government agencies.

  6. Solar Skylight

    SciTech Connect

    Adamson, J. C.

    1984-01-31

    A reflective shutter rotates within a skylight housing in such a fashion as to control solar energy thereby providing a combination of heating, lighting, and ventilation. The skylight housing has three faces: a glazed southern face, a glazed northern face, and an open downwardly oriented face to the interior of the structure. Counter-weighted pivot arms support the shutter at either end causing the center of rotation to pass through the center of gravity. The shutter has three basic positions: In the first position, during the winter day, the shutter closes off the northern face, allowing solar energy to enter directlymore » into the supporting structure providing heat gain and daylighting. In the second position, during the winter night, the shutter closes off the open face to the interior, providing insulation between the structure and the skylight housing. In the third position, during the non-heating season, the shutter closes off the southern face blocking unwanted heat gain but allowing diffuse northern light to penetrate for daylighting. In this last position, a means is provided for ventilating by natural convection. The apparatus can be operated either manually or by motor.« less

  7. Solar collector

    DOEpatents

    Wilhelm, William G.

    1982-01-01

    The field of this invention is solar collectors, and more particularly, the invention pertains to a flat plate collector that employs high performance thin films. The solar collector of this invention overcomes several problems in this field, such as excessive hardware, cost and reliability, and other prior art drawbacks outlined in the specification. In the preferred form, the apparatus features a substantially rigid planar frame (14). A thin film window (42) is bonded to one planar side of the frame. An absorber (24) of laminate construction is comprised of two thin film layers (24a, 24b) that are sealed perimetrically. The layers (24a, 24b) define a fluid-tight planar envelope (24c) of large surface area to volume through which a heat transfer fluid flows. Absorber (24) is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  8. Solar skylight

    DOEpatents

    Adamson, James C.

    1984-01-01

    A reflective shutter rotates within a skylight housing in such a fashion as to control solar energy thereby providing a combination of heating, lighting, and ventilation. The skylight housing has three faces: a glazed southern face, a glazed northern face, and an open downwardly oriented face to the interior of the structure. Counter-weighted pivot arms support the shutter at either end causing the center of rotation to pass through the center of gravity. The shutter has three basic positions: In the first position, during the winter day, the shutter closes off the northern face, allowing solar energy to enter directly into the supporting structure providing heat gain and daylighting. In the second position, during the winter night, the shutter closes off the open face to the interior, providing insulation between the structure and the skylight housing. In the third position, during the non-heating season, the shutter closes off the southern face blocking unwanted heat gain but allowing diffuse northern light to penetrate for daylighting. In this last position, a means is provided for ventilating by natural convection. The apparatus can be operated either manually or by motor.

  9. Lithium alloy negative electrodes

    NASA Astrophysics Data System (ADS)

    Huggins, Robert A.

    The 1996 announcement by Fuji Photo Film of the development of lithium batteries containing convertible metal oxides has caused a great deal of renewed interest in lithium alloys as alternative materials for use in the negative electrode of rechargeable lithium cells. The earlier work on lithium alloys, both at elevated and ambient temperatures is briefly reviewed. Basic principles relating thermodynamics, phase diagrams and electrochemical properties under near-equilibrium conditions are discussed, with the Li-Sn system as an example. Second-phase nucleation, and its hindrance under dynamic conditions plays an important role in determining deviations from equilibrium behavior. Two general types of composite microstructure electrodes, those with a mixed-conducting matrix, and those with a solid electrolyte matrix, are discussed. The Li-Sn-Si system at elevated temperatures, and the Li-Sn-Cd at ambient temperatures are shown to be examples of mixed-conducting matrix microstructures. The convertible oxides are an example of the solid electrolyte matrix type. Although the reversible capacity can be very large in this case, the first cycle irreversible capacity required to convert the oxides to alloys may be a significant handicap.

  10. Concentrating Solar Power Projects by Project Name | Concentrating Solar

    Science.gov Websites

    Tower Plant Gujarat Solar One Gulang 100MW Thermal Oil Parabolic Trough project Guzmán Hami 50 MW CSP ¼lich Solar Tower Kathu Solar Park KaXu Solar One Khi Solar One Kimberlina Solar Thermal Power Plant Solar Plant MINOS Mojave Solar Project Morón National Solar Thermal Power Facility Nevada Solar One

  11. Design of Metastable Tin Titanium Nitride Semiconductor Alloys

    DOE PAGES

    Bikowski, Andre; Siol, Sebastian; Gu, Jing; ...

    2017-07-07

    Here, we report on design of optoelectronic properties in previously unreported metastable tin titanium nitride alloys with spinel crystal structure. Theoretical calculations predict that Ti alloying in metastable Sn 3N 4 compound should improve hole effective mass by up to 1 order of magnitude, while other optical bandgaps remains in the 1–2 eV range up to x ~ 0.35 Ti composition. Experimental synthesis of these metastable alloys is predicted to be challenging due to high required nitrogen chemical potential (Δμ N ≥ +1.0 eV) but proven to be possible using combinatorial cosputtering from metal targets in the presence of nitrogenmore » plasma. Characterization experiments confirm that thin films of such (Sn 1–xTi x) 3N 4 alloys can be synthesized up to x = 0.45 composition, with suitable optical band gaps (1.5–2.0 eV), moderate electron densities (10 17 to 10 18 cm –3), and improved photogenerated hole transport (by 5×). Overall, this study shows that it is possible to design the metastable nitride materials with properties suitable for potential use in solar energy conversion applications.« less

  12. Bandgap engineering in semiconductor alloy nanomaterials with widely tunable compositions

    NASA Astrophysics Data System (ADS)

    Ning, Cun-Zheng; Dou, Letian; Yang, Peidong

    2017-12-01

    Over the past decade, tremendous progress has been achieved in the development of nanoscale semiconductor materials with a wide range of bandgaps by alloying different individual semiconductors. These materials include traditional II-VI and III-V semiconductors and their alloys, inorganic and hybrid perovskites, and the newly emerging 2D materials. One important common feature of these materials is that their nanoscale dimensions result in a large tolerance to lattice mismatches within a monolithic structure of varying composition or between the substrate and target material, which enables us to achieve almost arbitrary control of the variation of the alloy composition. As a result, the bandgaps of these alloys can be widely tuned without the detrimental defects that are often unavoidable in bulk materials, which have a much more limited tolerance to lattice mismatches. This class of nanomaterials could have a far-reaching impact on a wide range of photonic applications, including tunable lasers, solid-state lighting, artificial photosynthesis and new solar cells.

  13. Effects of boron addition on a-Si(90)Ge(10):H films obtained by low frequency plasma enhanced chemical vapour deposition.

    PubMed

    Pérez, Arllene M; Renero, Francisco J; Zúñiga, Carlos; Torres, Alfonso; Santiago, César

    2005-06-29

    Optical, structural and electric properties of (a-(Si(90)Ge(10))(1-y)B(y):H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10(-3) to 10(1) Ω(-1) cm(-1) when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV.

  14. Annealing optimization of hydrogenated amorphous silicon suboxide film for solar cell application

    NASA Astrophysics Data System (ADS)

    Guangzhi, Jia; Honggang, Liu; Hudong, Chang

    2011-05-01

    We investigate a passivation scheme using hydrogenated amorphous silicon suboxide (a-SiOx:H) film for industrial solar cell application. The a-SiOx:H films were deposited using plasma-enhanced chemical vapor deposition (PECVD) by decomposing nitrous oxide, helium and silane at a substrate temperature of around 250 °C. An extensive study has been carried out on the effect of thermal annealing on carrier lifetime and surface recombination velocity, which affect the final output of the solar cell. Minority carrier lifetimes for the deposited a-SiOx:H films without and with the thermal annealing on 4 Ω·cm p-type float-zone silicon wafers are 270 μs and 670 μs, respectively, correlating to surface recombination velocities of 70 cm/s and 30 cm/s. Optical analysis has revealed a distinct decrease of blue light absorption in the a-SiOx:H films compared to the commonly used intrinsic amorphous silicon passivation used in solar cells. This paper also reports that the low cost and high quality passivation fabrication sequences employed in this study are suitable for industrial processes.

  15. Solar Energy: Solar and the Weather.

    ERIC Educational Resources Information Center

    Knapp, Henry H., III

    This module on solar and the weather is one of six in a series intended for use as supplements to currently available materials on solar energy and energy conservation. Together with the recommended texts and references (sources are identified), these modules provide an effective introduction to energy conservation and solar energy technologies.…

  16. Solar Energy: Solar System Design Fundamentals.

    ERIC Educational Resources Information Center

    Knapp, Henry H., III

    This module on solar system design fundamentals is one of six in a series intended for use as supplements to currently available materials on solar energy and energy conservation. Together with the recommended texts and references (sources are identified), these modules provide an effective introduction to energy conservation and solar energy…

  17. Features of the solar array drive mechanism for the space telescope

    NASA Technical Reports Server (NTRS)

    Hostenkamp, R. G.

    1985-01-01

    The solar array drive mechanism for the Space Telescope embodies several features not customarily found on solar array drives. Power and signal transfer is achieved by means of a flexible wire harness for which the chosen solution, consisting of 168 standard wires, is described. The torque performance data of the harness over its temperature range are presented. The off load system which protects the bearings from the launch loads is released by a trigger made from Nitinol, the memory alloy. The benefits of memory alloy and the caveats for the design are briefly discussed. The design of the off load system is described and test experience is reported.

  18. Dephosphorization of Levitated Silicon-Iron Droplets for Production of Solar-Grade Silicon

    NASA Astrophysics Data System (ADS)

    Le, Katherine; Yang, Yindong; Barati, Mansoor; McLean, Alexander

    2018-05-01

    The treatment of relatively inexpensive silicon-iron alloys is a potential refining route in order to generate solar-grade silicon. Phosphorus is one of the more difficult impurity elements to remove by conventional processing. In this study, electromagnetic levitation was used to investigate phosphorus behavior in silicon-iron alloy droplets exposed to H2-Ar gas mixtures under various experimental conditions including, refining time, temperature (1723 K to 1993 K), gas flow rate, iron content, and initial phosphorus concentration in the alloy. Thermodynamic modeling of the dephosphorization reaction permitted prediction of the various gaseous products and indicated that diatomic phosphorus is the dominant species formed.

  19. FSW between Al alloy and Mg Alloy: the comparative study

    NASA Astrophysics Data System (ADS)

    Jagadeesha, C. B.

    2017-04-01

    It is difficult to fusion weld Al alloy to Mg alloy, so by experimental optimization procedure (EOP) optimum parameters for FSW between Al alloy and Mg alloy were determined and experiment conducted using these parameters resulted in not only sound weld but also highest strength weld for 5 mm thickness of the alloys plates. One can arrive to optimum parameters by following the EOP in case of similar and dissimilar materials FSW, such as Al alloy and Mg alloy FSW. It has observed that tensile sample having least thickness intermetallics (IMs) layer has highest strength compared to sample with larger thickness of intermetallics layer and also it has observed that weld of lesser thickness plates have strength higher than welds of larger thickness plates. It has observed that, Vickers hardness in WN i.e. on the region containing layers of IMs is considerably higher, which leads to emerge of new type of laminated composite materials. It has observed that, it is the least thickness IMs layers in the weld are responsible for higher strength of weld not the ductility of the IMs formed owing to the insertion of intermediate material in the weld. It has found that coefficient of friction is =0.25, in case of bead on plate welding of Mg alloy.

  20. Cladding of Mg alloy with Zr based BMG Alloy

    NASA Astrophysics Data System (ADS)

    Prasada Rao, A. K.; Oh, Y. S.; Faisal, M. K.; Kim, N. J.

    2016-02-01

    In the present work, an attempt has been made to clad AZ31 magnesium alloy with Zr-based bulk metallic glassy alloy (Vit-1), by casting method. The interface studies conducted using SEM-EDS line scan indicate that a good bond is formed at the clad interface of Zr and Mg. And the mechanism involved is discussed herein.

  1. EDITORIAL Solar harvest Solar harvest

    NASA Astrophysics Data System (ADS)

    Demming, Anna

    2010-12-01

    The first observations of the photoelectric effect date back to the early 19th century from work by Alexandre Edmond Becquerel, Heinrich Hertz, Wilhelm Hallwachs and J J Thomson. The theory behind the phenomena was clarified in a seminal paper by Einstein in 1905 and became an archetypical feature of the wave-particle description of light. A different manifestation of quantised electron excitation, whereby electrons are not emitted but excited into the valence band of the material, is what we call the photoconductive effect. As well as providing an extension to theories in fundamental physics, the phenomenon has spawned a field with enormous ramifications in the energy industry through the development of solar cells. Among advances in photovoltaic technology has been the development of organic photovoltaic technology. These devices have many benefits over their inorganic counterparts, such as light-weight, flexible material properties, as well as versatile materials' synthesis and low-cost large-scale production—all highly advantageous for manufacturing. The first organic photovoltaic systems were reported over 50 years ago [1], but the potential of the field has escalated in recent years in terms of efficiency, largely through band offsetting. Since then, great progress has been made in studies for optimising the efficiency of organic solar cells, such as the work by researchers in Germany and the Netherlands, where investigations were made into the percentage composition and annealing effects on composites of poly(3-hexylthiophene) (P3HT) and the fullerene derivative [6,6]-phenyl-C61 butyric acid methyl ester (PCBM) [2]. Hybrid devices that aim to exploit the advantages of both inorganic and organic constituents have also proven promising. One example of this is the work reported by researchers in Tunisia and France on a systematic study for optimising the composition morphology of TiO2 nanoparticles in poly(N-vinylcarbazole) (PVK), which also led to insights

  2. Hydrogenated amorphous silicon solar cells fabricated at low substrate temperature 110°C on flexible PET substrate

    NASA Astrophysics Data System (ADS)

    Ramakrishna, M.; Kumari, Juhi; Venkanna, K.; Agarwal, Pratima

    2018-05-01

    In this paper, we report a-Si:H solar cells fabricated on flexible Polyethylene terephthalate (PET) and corning glass. The a-Si:H thin films were prepared at low substrate temperature (110oC) on corning 1737 glass with different rf powers. The influence of rf power on structural and optoelectronic properties of i-a-Si:H were studied. The films deposited at rf power 50W show less broadening of <ɛ2> peak. This indicates these films are more ordered. With this optimized parameter for i-layer, solar cells fabricated on flexible PET substrate show best efficiency of 3.3% whereas on corning glass 3.82%.

  3. A Solar Thermophotovoltaic Electric Generator for Remote Power Applications

    NASA Technical Reports Server (NTRS)

    Fatemi, Navid S.

    1998-01-01

    We have successfully demonstrated that a solar thermophotovoltaic (TPV) system with a SiC graybody emitter and the monolithic interconnected module device technology can be realized. A custom-designed solar cavity was made to house the SiC emitter and the MIM strings for testing in a Stirling dish solar concentrator. Five 1x1-cm MIMs, with a bandgap of 0.74 eV,were mounted on a specially designed water-cooled heatsink and were electrically connected in series to form a string. Two such strings were fabricated and tested, as well as high-performance 2x2-cm MIMs with a bandgap of 0.74 eV. Very high output power density values between 0.82 and 0.90 W/sq cm were observed for an average emitter temperature of 1501 K.

  4. A Solar Thermophotovoltaic Electric Generator for Remote Power Applications

    NASA Technical Reports Server (NTRS)

    Fatemi, Navid S.

    1998-01-01

    We have successfully demonstrated that a solar thermophotovoltaic (TPV) system with a SiC graybody emitter and the monolithic interconnected module device technology can be realized. A custom-designed solar cavity was made to house the SiC emitter and the Monolithic Integrated Module (MIM) strings for testing in a Stirling dish solar concentrator. Five 1x1-cm MIMs, with a bandgap of 0.74 eV, were mounted on a specially designed water-cooled heatsink and were electrically connected in series to form a string. Two such strings were fabricated and tested, as well as high-performance 2x2-cm MIMs with a bandgap of 0.74 eV. Very high output power density values between 0.82 and 0.90 W/ square cm were observed for an average emitter temperature of 1501 K.

  5. Solar collector

    DOEpatents

    Wilhelm, W.G.

    The invention pertains to a flat plate collector that employs high performance thin films. The solar collector of this invention overcomes several problems in this field, such as excessive hardware, cost and reliability, and other prior art drawbacks outlined in the specification. In the preferred form, the apparatus features a substantially rigid planar frame. A thin film window is bonded to one planar side of the frame. An absorber of laminate construction is comprised of two thin film layers that are sealed perimetrically. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. Absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  6. Solar flares

    NASA Technical Reports Server (NTRS)

    Zirin, H.

    1974-01-01

    A review of the knowledge about solar flares which has been obtained through observations from the earth and from space by various methods. High-resolution cinematography is best carried out at H-alpha wavelengths to reveal the structure, time history, and location of flares. The classification flares in H alpha according to either physical or morphological criteria is discussed. The study of flare morphology, which shows where, when, and how flares occur, is important for evaluating theories of flares. Consideration is given to studies of flares by optical spectroscopy, radio emissions, and at X-ray and XUV wavelengths. Research has shown where and possibly why flares occur, but the physics of the instability involved, of the particle acceleration, and of the heating are still not understood.

  7. Solar pond

    NASA Technical Reports Server (NTRS)

    Miller, C. G.; Stephens, J. B. (Inventor)

    1978-01-01

    Shallow pools of liquid to collect low-temperature solar generated thermal energy are described. Narrow elongated trenches, grouped together over a wide area, are lined with a heat-absorbing black liner. The heat-absorbing liquid is kept separate from the thermal energy removing fluid by means such as clear polyethylene material. The covering for the pond may be a fluid or solid. If the covering is a fluid, fire fighting foam, continuously generated, or siloons are used to keep the surface covering clean and insulated. If the thermal energy removing fluid is a gas, a fluid insulation layer contained in a flat polyethlene tubing is used to cover the pond. The side of the tube directed towards the sun is treated to block out ultraviolet radiation and trap in infrared radiation.

  8. Large Electric Field–Enhanced–Hardness Effect in a SiO2 Film

    PubMed Central

    Revilla, Reynier I.; Li, Xiao-Jun; Yang, Yan-Lian; Wang, Chen

    2014-01-01

    Silicon dioxide films are extensively used in nano and micro–electromechanical systems. Here we studied the influence of an external electric field on the mechanical properties of a SiO2 film by using nanoindentation technique of atomic force microscopy (AFM) and friction force microscopy (FFM). A giant augmentation of the relative elastic modulus was observed by increasing the localized electric field. A slight decrease in friction coefficients was also clearly observed by using FFM with the increase of applied tip voltage. The reduction of the friction coefficients is consistent with the great enhancement of sample hardness by considering the indentation–induced deformation during the friction measurements. PMID:24681517

  9. A forward bias method for lag correction of an a-Si flat panel detector

    SciTech Connect

    Starman, Jared; Tognina, Carlo; Partain, Larry

    2012-01-15

    Purpose: Digital a-Si flat panel (FP) x-ray detectors can exhibit detector lag, or residual signal, of several percent that can cause ghosting in projection images or severe shading artifacts, known as the radar artifact, in cone-beam computed tomography (CBCT) reconstructions. A major contributor to detector lag is believed to be defect states, or traps, in the a-Si layer of the FP. Software methods to characterize and correct for the detector lag exist, but they may make assumptions such as system linearity and time invariance, which may not be true. The purpose of this work is to investigate a new hardwaremore » based method to reduce lag in an a-Si FP and to evaluate its effectiveness at removing shading artifacts in CBCT reconstructions. The feasibility of a novel, partially hardware based solution is also examined. Methods: The proposed hardware solution for lag reduction requires only a minor change to the FP. For pulsed irradiation, the proposed method inserts a new operation step between the readout and data collection stages. During this new stage the photodiode is operated in a forward bias mode, which fills the defect states with charge. A Varian 4030CB panel was modified to allow for operation in the forward bias mode. The contrast of residual lag ghosts was measured for lag frames 2 and 100 after irradiation ceased for standard and forward bias modes. Detector step response, lag, SNR, modulation transfer function (MTF), and detective quantum efficiency (DQE) measurements were made with standard and forward bias firmware. CBCT data of pelvic and head phantoms were also collected. Results: Overall, the 2nd and 100th detector lag frame residual signals were reduced 70%-88% using the new method. SNR, MTF, and DQE measurements show a small decrease in collected signal and a small increase in noise. The forward bias hardware successfully reduced the radar artifact in the CBCT reconstruction of the pelvic and head phantoms by 48%-81%. Conclusions: Overall

  10. Large Electric Field-Enhanced-Hardness Effect in a SiO2 Film

    NASA Astrophysics Data System (ADS)

    Revilla, Reynier I.; Li, Xiao-Jun; Yang, Yan-Lian; Wang, Chen

    2014-03-01

    Silicon dioxide films are extensively used in nano and micro-electromechanical systems. Here we studied the influence of an external electric field on the mechanical properties of a SiO2 film by using nanoindentation technique of atomic force microscopy (AFM) and friction force microscopy (FFM). A giant augmentation of the relative elastic modulus was observed by increasing the localized electric field. A slight decrease in friction coefficients was also clearly observed by using FFM with the increase of applied tip voltage. The reduction of the friction coefficients is consistent with the great enhancement of sample hardness by considering the indentation-induced deformation during the friction measurements.

  11. Simulation and Measurement of Absorbed Dose from 137 Cs Gammas Using a Si Timepix Detector

    NASA Technical Reports Server (NTRS)

    Stoffle, Nicholas; Pinsky, Lawrence; Empl, Anton; Semones, Edward

    2011-01-01

    The TimePix readout chip is a hybrid pixel detector with over 65k independent pixel elements. Each pixel contains its own circuitry for charge collection, counting logic, and readout. When coupled with a Silicon detector layer, the Timepix chip is capable of measuring the charge, and thus energy, deposited in the Silicon. Measurements using a NIST traceable 137Cs gamma source have been made at Johnson Space Center using such a Si Timepix detector, and this data is compared to simulations of energy deposition in the Si layer carried out using FLUKA.

  12. Deformation Behavior of Al/a-Si Core-shell Nanostructures

    NASA Astrophysics Data System (ADS)

    Fleming, Robert

    Al/a-Si core-shell nanostructures (CSNs), consisting of a hemispherical Al core surrounded by a hard shell of a-Si, have been shown to display unusual mechanical behavior in response to compression loading. Most notably, these nanostructures exhibit substantial deformation recovery, even when loaded much beyond the elastic limit. Nanoindentation measurements revealed a unique mechanical response characterized by discontinuous signatures in the load-displacement data. In conjunction with the indentation signatures, nearly complete deformation recovery is observed. This behavior is attributed to dislocation nucleation and annihilation events enabled by the 3-dimensional confinement of the Al core. As the core confinement is reduced, either through an increase in confined core volume or a change in the geometrical confinement, the indentation signatures and deformation resistance are significantly reduced. Complimentary molecular dynamics simulations show that a substantial amount of dislocation egression occurs in the core of CSNs during unloading as dislocations annihilate at the core/shell interface. Smaller core diameters correlate with the development of a larger back-stress within the core during unloading, which further correlates with improved dislocation annihilation after unloading. Furthermore, dislocations nucleated in the core of core-shell nanorods are not as effectively removed as compared to CSNs. Nanostructure-textured surfaces (NSTSs) composed of Al/a-Si CSNs have improved tribological properties compared surfaces patterned with Al nanodots and a flat (100) Si surface. NSTSs have a coefficient of friction (COF) as low as 0.015, exhibit low adhesion with adhesion forces on the order of less than 1 microN, and are highly deformation resistant, with no apparent surface deformation after nanoscratch testing, even at contact forces up to 8000 microN. In comparison, (100) Si has substantially higher adhesion and COF ( 10 microN and 0.062, respectively

  13. In vivo degradation behavior and biological activity of some new Mg-Ca alloys with concentration's gradient of Si for bone grafts

    NASA Astrophysics Data System (ADS)

    Trincă, Lucia Carmen; Fântânariu, Mircea; Solcan, Carmen; Trofin, Alina Elena; Burtan, Liviu; Acatrinei, Dumitru Mihai; Stanciu, Sergiu; Istrate, Bogdan; Munteanu, Corneliu

    2015-10-01

    Magnesium based alloys, especially Mg-Ca alloys, are biocompatible substrates with mechanical properties similar to those of bones. The biodegradable alloys of Mg-Ca provide sufficient mechanical strength in load carrying applications as opposed to biopolymers and also they avoid stress shielding and secondary surgery inherent with permanent metallic implant materials. The main issue facing a biodegradable Mg-Ca alloy is the fast degradation in the aggressive physiological environment of the body. The alloy's corrosion is proportional with the dissolution of the Mg in the body: the reaction with the water generates magnesium hydroxide and hydrogen. The accelerated corrosion will lead to early loss of the alloy's mechanical integrity. The degradation rate of an alloy can be improved mainly through tailoring the composition and by carrying out surface treatments. This research focuses on the ability to adjust degradation rate of Mg-Ca alloys by an original method and studies the biological activity of the resulted specimens. A new Mg-Ca alloy, with a Si gradient concentration from the surface to the interior of the material, was obtained. The surface morphology was investigated using scanning electron microscopy (VegaTescan LMH II, SE detector, 30 kV), X-ray diffraction (X'Pert equipment) and energy dispersive X-ray (Bruker EDS equipment). In vivo degradation behavior, biological compatibility and activity of Mg-Ca alloys with/without Si gradient concentration were studied with an implant model (subcutaneous and bony) in rats. The organism response to implants was characterized by using radiological (plain X-rays and computed tomography), biochemical and histological methods of investigation. The results sustained that Si gradient concentration can be used to control the rate of degradation of the Mg-Ca alloys for enhancing their biologic activity in order to facilitate bone tissue repair.

  14. Solar Research | NREL

    Science.gov Websites

    the System Advisor Model (SAM) PV engineering PV performance reliability and safety Solar resource Research Photo of a city landscape with a sun in the background. Solar energy research at NREL includes photovoltaics, concentrating solar power, solar grid and systems integration, and market research

  15. Toward a Solar Civilization

    ERIC Educational Resources Information Center

    Hippel, Frank von; Williams, Robert H.

    1977-01-01

    The future of solar energy is examined environmentally, socially, and economically. Coal and nuclear fission are discussed as long-range energy alternatives and U. S. regional strategies are suggested. Discussed in detail are low temperature solar heat, solar electricity, and chemical fuels from solar energy. (MA)

  16. Solar Thermal Propulsion Concept

    NASA Technical Reports Server (NTRS)

    2004-01-01

    Harnessing the Sun's energy through Solar Thermal Propulsion will propel vehicles through space by significantly reducing weight, complexity, and cost while boosting performance over current conventional upper stages. Another solar powered system, solar electric propulsion, demonstrates ion propulsion is suitable for long duration missions. Pictured is an artist's concept of space flight using solar thermal propulsion.

  17. Solar Energy Basics | NREL

    Science.gov Websites

    Solar Energy Basics Solar Energy Basics Solar is the Latin word for sun-a powerful source of energy sun falls on the earth in one hour than is used by everyone in the world in one year. A variety of heat from the sun to provide electricity for large power stations. Solar Process Heat These

  18. PLUTONIUM-CERIUM-COPPER ALLOYS

    DOEpatents

    Coffinberry, A.S.

    1959-05-12

    A low melting point plutonium alloy useful as fuel is a homogeneous liquid metal fueled nuclear reactor is described. Vessels of tungsten or tantalum are useful to contain the alloy which consists essentially of from 10 to 30 atomic per cent copper and the balance plutonium and cerium. with the plutontum not in excess of 50 atomic per cent.

  19. Aluminum and its light alloys

    NASA Technical Reports Server (NTRS)

    Merica, Paul D

    1920-01-01

    Report is a summary of research work which has been done here and abroad on the constitution and mechanical properties of the various alloy systems with aluminum. The mechanical properties and compositions of commercial light alloys for casting, forging, or rolling, obtainable in this country are described.

  20. Shape memory alloy thaw sensors

    DOEpatents

    Shahinpoor, Mohsen; Martinez, David R.

    1998-01-01

    A sensor permanently indicates that it has been exposed to temperatures exceeding a critical temperature for a predetermined time period. An element of the sensor made from shape memory alloy changes shape when exposed, even temporarily, to temperatures above the Austenitic temperature of the shape memory alloy. The shape change of the SMA element causes the sensor to change between two readily distinguishable states.

  1. Platelet compatibility of magnesium alloys.

    PubMed

    Yahata, Chie; Mochizuki, Akira

    2017-09-01

    Lately, Mg alloys have been investigated as a new class of biomaterials owing to their excellent biodegradability and biocompatibility. It has previously been reported that the in vitro compatibility of a Mg alloy containing aluminum and zinc (AZ) alloy with the blood coagulation system is excellent due to Mg 2+ ions eluting from the alloy. In this study, the compatibility of the AZ alloy with platelets was evaluated by scanning electron microscopy (SEM) and flow cytometry. In the flow cytometry analysis, the platelets were stained using PAC-1 and P-selectin antibodies. SEM images and PAC-1 analyses showed no negative effects on the platelets, whereas P-selectin analysis showed marked platelet activation. To understand these contradictory results, the amount of β-thromboglobulin (β-TG) released from the platelets was investigated. From that investigation, it was concluded that platelets are markedly activated by the alloys. In addition to clarifying divergent results depending on the analysis method used, the effects of Mg 2+ ions and pH on platelet activation were studied. These results show that platelet activation is caused by an increase in pH at the alloy surface owing to the erosion of the alloy. Copyright © 2017 Elsevier B.V. All rights reserved.

  2. Concentrating Solar Power Projects in India | Concentrating Solar Power |

    Science.gov Websites

    ;alphabetical by project name. You can browse a project profile by clicking on the project name. Abhijeet Solar Project ACME Solar Tower Dadri ISCC Plant Dhursar Diwakar Godawari Solar Project Gujarat Solar One KVK Energy Solar Project Megha Solar Plant National Solar Thermal Power Facility

  3. Threshold Voltage Instability in A-Si:H TFTS and the Implications for Flexible Displays and Circuits

    DTIC Science & Technology

    2008-12-01

    and negative gate voltages with and without elevated drain voltages for FDC TFTs. Extending techniques used to localize hot electron degradation...in MOSFETs, experiments in our lab have localized the degradation of a-Si:H to the gate dielectric/a-Si:H channel interface [Shringarpure, et al...saturation, increased drain source current measured with the source and drain reversed indicates localization of ΔVth to the gate dielectric/amorphous

  4. Photovoltaic solar concentrator

    SciTech Connect

    Nielson, Gregory N.; Cruz-Campa, Jose Luis; Okandan, Murat

    A process including forming a photovoltaic solar cell on a substrate, the photovoltaic solar cell comprising an anchor positioned between the photovoltaic solar cell and the substrate to suspend the photovoltaic solar cell from the substrate. A surface of the photovoltaic solar cell opposite the substrate is attached to a receiving substrate. The receiving substrate may be bonded to the photovoltaic solar cell using an adhesive force or a metal connecting member. The photovoltaic solar cell is then detached from the substrate by lifting the receiving substrate having the photovoltaic solar cell attached thereto and severing the anchor connecting themore » photovoltaic solar cell to the substrate. Depending upon the type of receiving substrate used, the photovoltaic solar cell may be removed from the receiving substrate or remain on the receiving substrate for use in the final product.« less

  5. Solar prediction analysis

    NASA Technical Reports Server (NTRS)

    Smith, Jesse B.

    1992-01-01

    Solar Activity prediction is essential to definition of orbital design and operational environments for space flight. This task provides the necessary research to better understand solar predictions being generated by the solar community and to develop improved solar prediction models. The contractor shall provide the necessary manpower and facilities to perform the following tasks: (1) review, evaluate, and assess the time evolution of the solar cycle to provide probable limits of solar cycle behavior near maximum end during the decline of solar cycle 22, and the forecasts being provided by the solar community and the techniques being used to generate these forecasts; and (2) develop and refine prediction techniques for short-term solar behavior flare prediction within solar active regions, with special emphasis on the correlation of magnetic shear with flare occurrence.

  6. Equivalent crystal theory of alloys

    NASA Technical Reports Server (NTRS)

    Bozzolo, Guillermo; Ferrante, John

    1991-01-01

    Equivalent Crystal Theory (ECT) is a new, semi-empirical approach to calculating the energetics of a solid with defects. The theory has successfully reproduced surface energies in metals and semiconductors. The theory of binary alloys to date, both with first-principles and semi-empirical models, has not been very successful in predicting the energetics of alloys. This procedure is used to predict the heats of formation, cohesive energy, and lattice parameter of binary alloys of Cu, Ni, Al, Ag, Au, Pd, and Pt as functions of composition. The procedure accurately reproduces the heats of formation versus composition curves for a variety of binary alloys. The results are then compared with other approaches such as the embedded atom and lattice parameters of alloys from pure metal properties more accurately than Vegard's law is presented.

  7. Normal evaporation of binary alloys

    NASA Technical Reports Server (NTRS)

    Li, C. H.

    1972-01-01

    In the study of normal evaporation, it is assumed that the evaporating alloy is homogeneous, that the vapor is instantly removed, and that the alloy follows Raoult's law. The differential equation of normal evaporation relating the evaporating time to the final solute concentration is given and solved for several important special cases. Uses of the derived equations are exemplified with a Ni-Al alloy and some binary iron alloys. The accuracy of the predicted results are checked by analyses of actual experimental data on Fe-Ni and Ni-Cr alloys evaporated at 1600 C, and also on the vacuum purification of beryllium. These analyses suggest that the normal evaporation equations presented here give satisfactory results that are accurate to within an order of magnitude of the correct values, even for some highly concentrated solutions. Limited diffusion and the resultant surface solute depletion or enrichment appear important in the extension of this normal evaporation approach.

  8. Heat storage in alloy transformations

    NASA Technical Reports Server (NTRS)

    Birchenall, C. E.; Gueceri, S. I.; Farkas, D.; Labdon, M. B.; Nagaswami, N.; Pregger, B.

    1981-01-01

    The feasibility of using metal alloys as thermal energy storage media was determined. The following major elements were studied: (1) identification of congruently transforming alloys and thermochemical property measurements; (2) development of a precise and convenient method for measuring volume change during phase transformation and thermal expansion coefficients; (3) development of a numerical modeling routine for calculating heat flow in cylindrical heat exchangers containing phase change materials; and (4) identification of materials that could be used to contain the metal alloys. Several eutectic alloys and ternary intermetallic phases were determined. A method employing X-ray absorption techniques was developed to determine the coefficients of thermal expansion of both the solid and liquid phases and the volume change during phase transformation from data obtained during one continuous experimental test. The method and apparatus are discussed and the experimental results are presented. The development of the numerical modeling method is presented and results are discussed for both salt and metal alloy phase change media.

  9. Semiconductor Alloy Theory.

    DTIC Science & Technology

    1986-01-14

    0.15 0.352 GaPAs) 3.5 191 0.10 0.11 0.307 In(As,SbJ 6.8 635 0.52 0.79 0.840 Ga(As,Sb) 7.6 924 0.53 0.94 0.844 AI(As,Sb) 8.1 1030 0.56 0.78 0.810 - ln(PSb...to prov ide good estimiates, of the mixing enthalpies *T, /T 2 is plotted against bi8 ) alone, the FPT points are fl of pseudobinaryN alloys. The

  10. Thermomechanical treatment of alloys

    DOEpatents

    Bates, John F.; Brager, Howard R.; Paxton, Michael M.

    1983-01-01

    An article of an alloy of AISI 316 stainless steel is reduced in size to predetermined dimensions by cold working in repeated steps. Before the last reduction step the article is annealed by heating within a temperature range, specifically between 1010.degree. C. and 1038.degree. C. for a time interval between 90 and 60 seconds depending on the actual temperature. By this treatment the swelling under neutron bombardment by epithermal neutrons is reduced while substantial recrystallization does not occur in actual use for a time interval of at least of the order of 5000 hours.

  11. Wedlable nickel aluminide alloy

    DOEpatents

    Santella, Michael L.; Sikka, Vinod K.

    2002-11-19

    A Ni.sub.3 Al alloy with improved weldability is described. It contains about 6-12 wt % Al, about 6-12 wt % Cr, about 0-3 wt % Mo, about 1.5-6 wt % Zr, about 0-0.02 wt % B and at least one of about 0-0.15 wt % C, about 0-0.20 wt % Si, about 0-0.01 wt % S and about 0-0.30 wt % Fe with the balance being Ni.

  12. Development of a Brazing Alloy for the Mechanically Alloyed High Temperature Sheet Material INCOLOY Alloy MA 956.

    DTIC Science & Technology

    1981-09-01

    OF A BRAZING ALLOY FOR THE MECHANICALLY ALLOYED HIGH TEMPERATURE SHEET MATERIAL INCOLOY ALLOY MA 956 W. E. Morgan and Dr. P. J. Bridges N. Wiggin...PERIOD COVERED DEVELOPMENT OF A BRAZING ALLOY FOR THE Final Report MECHANICALLY ALLOYED HIGH TEMPERATURE Dec 1978 - March 1981 SHEET MATERIAL INCOLOY...block nomber) High temperature ODS alloys, Braze development, Braze alloys, INCOLOY MA 956, Ni-Cr-Pd, Fe-Cr-Pd, Ni-Cr-Ge, Fe-Cr-Ge, Fe-Cr-B, Fe-Cr-Si

  13. Solar collector array

    DOEpatents

    Hall, John Champlin; Martins, Guy Lawrence

    2015-09-06

    A method and apparatus for efficient manufacture, assembly and production of solar energy. In one aspect, the apparatus may include a number of modular solar receiver assemblies that may be separately manufactured, assembled and individually inserted into a solar collector array housing shaped to receive a plurality of solar receivers. The housing may include optical elements for focusing light onto the individual receivers, and a circuit for electrically connecting the solar receivers.

  14. Development of Solar Research

    NASA Astrophysics Data System (ADS)

    Wittmann, Axel D.; Wolfschmidt, Gudrun; Duerbeck, Hilmar W.

    Originally based on a workshop on “Development of Solar Research”, held in Freiburg/Breisgau, this book contains articles on megalithic structures, the Nebra sky-disk, ancient sun cults, the observation of sunspots, the photography of the sun during eclipses, eclipse maps and expeditions, solar telescopes, solar physics during the Nazi era, archives of solar observations, scientific ballooning for solar research, site-testing on the Canary Islands, as well as on international cooperation.

  15. Solar heating and cooling.

    PubMed

    Duffie, J A

    1976-01-01

    Solar energy is discussed as an energy resource that can be converted into useful energy forms to meet a variety of energy needs. The review briefly explains the nature of this energy resource, the kinds of applications that can be made useful, and the status of several systems to which it has been applied. More specifically, information on solar collectors, solar water heating, solar heating of buildings, solar cooling plus other applications, are included.

  16. Thin film solar cell including a spatially modulated intrinsic layer

    DOEpatents

    Guha, Subhendu; Yang, Chi-Chung; Ovshinsky, Stanford R.

    1989-03-28

    One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

  17. Development of Surfaces Optically Suitable for Flat Solar Panels

    NASA Technical Reports Server (NTRS)

    Desmet, D.; Jason, A.

    1978-01-01

    Three areas of research in the development of flat solar panels are described. (1) A reflectometer which can separately evaluate the spectral and diffuse reflectivities of surfaces was developed. The reflectometer has a phase locked detection system. (2) A coating composed of strongly bound copper oxide that is formed by an etching process performed on an aluminum alloy with high copper content was also developed. Because of this one step fabrication process, fabrication costs are expected to be small. (3) A literature search was conducted and conclusions on the required optical properties of flat plate solar collectors are presented.

  18. Properties of iron alloys under the Earth's core conditions

    NASA Astrophysics Data System (ADS)

    Morard, Guillaume; Andrault, Denis; Antonangeli, Daniele; Bouchet, Johann

    2014-05-01

    The Earth's core is constituted of iron and nickel alloyed with lighter elements. In view of their affinity with the metallic phase, their relative high abundance in the solar system and their moderate volatility, a list of potential light elements have been established, including sulfur, silicon and oxygen. We will review the effects of these elements on different aspects of Fe-X high pressure phase diagrams under Earth's core conditions, such as melting temperature depression, solid-liquid partitioning during crystallization, and crystalline structure of the solid phases. Once extrapolated to the inner-outer core boundary, these petrological properties can be used to constrain the Earth's core properties.

  19. Development of a Si-PM based alpha camera for plutonium detection in nuclear fuel facilities

    NASA Astrophysics Data System (ADS)

    Morishita, Yuki; Yamamoto, Seiichi; Izaki, Kenji; Kaneko, Junichi H.; Toi, Kohei; Tsubota, Youichi

    2014-05-01

    Alpha particles are monitored for detecting nuclear fuel material (i.e., plutonium and uranium) at nuclear fuel facilities. Currently, for monitoring the airborne contamination of nuclear fuel, only energy information measured by Si-semiconductor detectors is used to distinguish nuclear fuel material from radon daughters. In some cases, however, such distinguishing is difficult when the radon concentration is high. In addition, a Si-semiconductor detector is generally sensitive to noise. In this study, we developed a new alpha-particle imaging system by combining a Si-PM array, which is insensitive to noise, with a Ce-doped Gd3Al2Ga3O12(GAGG) scintillator, and evaluated our developed system's fundamental performance. The scintillator was 0.1-mm thick, and the light guide was 3.0 mm thick. An 241Am source was used for all the measurements. We evaluated the spatial resolution by taking an image of a resolution chart. A 1.6 lp/mm slit was clearly resolved, and the spatial resolution was estimated to be less than 0.6-mm FWHM. The energy resolution was 13% FWHM. A slight distortion was observed in the image, and the uniformity near its center was within ±24%. We conclude that our developed alpha-particle imaging system is promising for plutonium detection at nuclear fuel facilities.

  20. Visible light communication and indoor positioning using a-SiCH device as receiver

    NASA Astrophysics Data System (ADS)

    Vieira, M. A.; Vieira, M.; Louro, P.; Vieira, P.; Fantoni, A.

    2017-08-01

    An indoor positioning system were trichromatic white LEDs are used both for illumination proposes and as transmitters and an optical processor, based on a-SiC:H technology, as mobile receiver is presented. OOK modulation scheme is used, and it provides a good trade-off between system performance and implementation complexity. The relationship between the transmitted data and the received digital output levels is decoded. The system topology for positioning is a self-positioning system in which the measuring unit is mobile. This unit receives the signals of several transmitters in known locations, and has the capability to compute its location based on the measured signals. LED bulbs work as transmitters, sending information together with different IDs related to their physical locations. A triangular topology for the unit cell is analysed. A 2D localization design, demonstrated by a prototype implementation is presented. Fine-grained indoor localization is tested. The received signal is used in coded multiplexing techniques for supporting communications and navigation concomitantly on the same channel. The position is estimated through the visible multilateration metodh using several non-collinear transmitters. The location and motion information is found by mapping position and estimates the location areas. Data analysis showed that by using a pinpin double photodiode based on a a-SiC:H heterostucture as receiver, and RBGLEDs as transmitters it is possible not only to determine the mobile target's position but also to infer the motion direction over time, along with the received information in each position.

  1. Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane

    NASA Astrophysics Data System (ADS)

    Knapp, T. J.; Mohr, R. T.; Li, Yize Stephanie; Thorgrimsson, Brandur; Foote, Ryan H.; Wu, Xian; Ward, Daniel R.; Savage, D. E.; Lagally, M. G.; Friesen, Mark; Coppersmith, S. N.; Eriksson, M. A.

    We report the characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. Previously, all heterostructures used to form quantum dots were created using the strain-grading method of strain relaxation, a method that necessarily introduces misfit dislocations into a heterostructure and thereby degrades the reproducibility of quantum devices. Using a SiGe nanomembrane as a virtual substrate eliminates the need for misfit dislocations but requires a wet-transfer process that results in a non-epitaxial interface in close proximity to the quantum dots. We show that this interface does not prevent the formation of quantum dots, and is compatible with a tunable inter-dot tunnel coupling, the identification of spin states, and the measurement of a singlet-to-triplet transition as a function of the applied magnetic field. This work was supported in part by ARO (W911NF-12-0607), NSF (DMR-1206915, PHY-1104660), and the United States Department of Defense. The views and conclusions contained in this document are those of the author and should not be interpreted as representing the official policies, either expressly or implied, of the US Government. T.J. Knapp et al. (2015). arXiv:1510.08888 [cond-mat.mes-hall].

  2. Influence of oxygen doping on resistive-switching characteristic of a-Si/c-Si device

    NASA Astrophysics Data System (ADS)

    Zhang, Jiahua; Chen, Da; Huang, Shihua

    2017-12-01

    The influence of oxygen doping on resistive-switching characteristics of Ag/a-Si/p+-c-Si device was investigated. By oxygen doping in the growth process of amorphous silicon, the device resistive-switching performances, such as the ON/OFF resistance ratios, yield and stability were improved, which may be ascribed to the significant reduction of defect density because of oxygen incorporation. The device I-V characteristics are strongly dependent on the oxygen doping concentration. As the oxygen doping concentration increases, the Si-rich device gradually transforms to an oxygen-rich device, and the device yield, switching characteristics, and stability may be improved for silver/oxygen-doped a-Si/p+-c-Si device. Finally, the device resistive-switching mechanism was analyzed. Project supported by the Zhejiang Provincial Natural Science Foundation of China (No. LY17F040001), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. KF2015_02), the Open Project Program of National Laboratory for Infrared Physics, Chinese Academy of Sciences (No. M201503), the Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012), and the Zhejiang Provincial Key Laboratory (No. 2013E10022).

  3. aSi EPIDs for the in-vivo dosimetry of static and dynamic beams

    NASA Astrophysics Data System (ADS)

    Piermattei, A.; Cilla, S.; Azario, L.; Greco, F.; Russo, M.; Grusio, M.; Orlandini, L.; Fidanzio, A.

    2015-10-01

    Portal imaging by amorphous silicon (aSi) photodiode is currently the most applied technology for in-vivo dosimetry (IVD) of static and dynamic radiotherapy beams. The strategy, adopted in this work to perform the IVD procedure by aSi EPID, is based on: in patient reconstruction of the isocenter dose and day to day comparison between 2D-portal images to verify the reproducibility of treatment delivery. About 20.000 tests have been carried out in this last 3 years in 8 radiotherapy centers using the SOFTDISO program. The IVD results show that: (i) the procedure can be implemented for linacs of different manufacturer, (ii) the IVD analysis can be obtained on a computer screen, in quasi real time (about 2 min after the treatment delivery) and (iii) once the causes of the discrepancies were eliminated, all the global IVD tests for single patient were within the acceptance criteria defined by: ±5% for the isocenter dose, and Pγ<1≥90% of the checked points for the 2D portal image γ-analysis. This work is the result of a project supported by the Istituto Nazionale di Fisica Nucleare (INFN) and Università Cattolica del S.Cuore (UCSC).

  4. Optical bias selector based on a multilayer a-SiC:H optical filter

    NASA Astrophysics Data System (ADS)

    Vieira, M.; Vieira, M. A.; Louro, P.

    2017-08-01

    In this paper we present a MUX/DEMUX device based on a multilayer a-SiC:H optical filter that requires nearultraviolet steady state optical switches to select desired wavelengths in the visible range. Spectral response and transmittance measurements are presented and show the feasibility of tailoring the wavelength and bandwidth of a polychromatic mixture of different wavelengths. The selector filter is realized by using a two terminal double pi'n/pin a-SiC:H photodetector. Five visible communication channels are transmitted together, each one with a specific bit sequence. The combined optical signal is analyzed by reading out the photocurrent, under near-UV front steady state background. Data shows that 25 current levels are detected and corresponds to the thirty-two on/off possible states. The proximity of the magnitude of consecutive levels causes occasional errors in the decoded information. To minimize the errors, four parity bit are generated and stored along with the data word. The parity of the word is checked after reading the word to detect and correct the transmitted data. Results show that the background works as a selector in the visible range, shifting the sensor sensitivity and together with the parity check bits allows the identification and decoding of the different input channels. A transmission capability of 60 kbps using the generated codeword was achieved. An optoeletronic model gives insight on the system physics.

  5. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    SciTech Connect

    Reichel, Christian, E-mail: christian.reichel@ise.fraunhofer.de; National Renewable Energy Laboratory; Feldmann, Frank

    Passivated contacts (poly-Si/SiO{sub x}/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF{sub 2}), the ion implantation dose (5 × 10{sup 14 }cm{sup −2} to 1 × 10{sup 16 }cm{sup −2}), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells.more » Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV{sub oc}) of 725 and 720 mV, respectively. For p-type passivated contacts, BF{sub 2} implantations into intrinsic a-Si yield well passivated contacts and allow for iV{sub oc} of 690 mV, whereas implanted B gives poor passivation with iV{sub oc} of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V{sub oc} of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF{sub 2} implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V{sub oc} of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.« less

  6. The boron-tailing myth in hydrogenated amorphous silicon solar cells

    SciTech Connect

    Stuckelberger, M., E-mail: michael.stuckelberger@alumni.ethz.ch; Bugnon, G.; Despeisse, M.

    The boron-tailing effect in hydrogenated amorphous silicon (a-Si:H) solar cells describes the reduced charge collection specifically in the blue part of the spectrum for absorber layers deposited above a critical temperature. This effect limits the device performance of state-of-the art solar cells: For enhanced current density (reduced bandgap), the deposition temperature should be as high as possible, but boron tailing gets detrimental above 200 °C. To investigate this limitation and to show potential paths to overcome it, we deposited high-efficiency a-Si:H solar cells, varying the deposition temperatures of the p-type and the intrinsic absorber (i) layers between 150 and 250 °C. Usingmore » secondary ion mass spectroscopy, we study dedicated stacks of i-p-i layers deposited at different temperatures. This allows us to track boron diffusion at the p-i and i-p interfaces as they occur in the p-i-n and n-i-p configurations of a-Si:H solar cells for different deposition conditions. Finally, we prove step-by-step that the common explanation for boron tailing—boron diffusion from the p layer into the i layer leading to enhanced recombination—is not generally true and propose an alternative explanation for the experimentally observed drop in the external quantum efficiency at short wavelengths.« less

  7. Stress Corrosion Cracking of Certain Aluminum Alloys

    NASA Technical Reports Server (NTRS)

    Hasse, K. R.; Dorward, R. C.

    1983-01-01

    SC resistance of new high-strength alloys tested. Research report describes progress in continuing investigation of stress corrosion (SC) cracking of some aluminum alloys. Objective of program is comparing SC behavior of newer high-strength alloys with established SC-resistant alloy.

  8. Solar eclipses.

    NASA Astrophysics Data System (ADS)

    Livingston, W.

    The occasion of a total eclipse impacts the human observer with a bewildering rapid sequence of phenomena: mid-day cooling, failing light without accustomed color change, shadow-bands transiting the ground, cessation of bird sounds, possible frantic beating of jungle drums, Baily's beads, appearance of flame-like prominences, and most fantastic of all the solar corona. The author considers that although the corona is known to be 2 - 20(106)K, there is a lack of consensus on the heating mechanism, except the energy must be non-thermal and derived from surface and sub-surface convective motions. Theoreticians invoke the Joule dissipation of magnetic fields by Alfvén waves, electric currents in loop structures, or MHD turbulence. Although eclipse experiments to discriminate between these ideas generally fail, the sighting of 'plasmoids' was reported from the CFHT on Mauna Kea at the 1991 eclipse. Future experiments include: IR mapping of the coronal spectrum, spectroscopic velocity measurements, and the continued search for waves, nanoflares, and plasmoids.

  9. Design and fabrication of brayton cycle solar heat receiver

    NASA Technical Reports Server (NTRS)

    Mendelson, I.

    1971-01-01

    A detail design and fabrication of a solar heat receiver using lithium fluoride as the heat storage material was completed. A gas flow analysis was performed to achieve uniform flow distribution within overall pressure drop limitations. Structural analyses and allowable design criteria were developed for anticipated environments such as launch, pressure containment, and thermal cycling. A complete heat receiver assembly was fabricated almost entirely from the refractory alloy, niobium-1% zirconium.

  10. Tuning the energy band gap of ternary alloyed Cd1-xPbxS quantum dots for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Badawi, Ali

    2016-02-01

    Tuning the energy band gap of ternary alloyed Cd1-xPbxS (x: 0, 0.33, 0.5, 0.67 and 1) quantum dots (QDs) for photovoltaic applications is studied. Alloyed Cd1-xPbxS QDs were adsorbed onto TiO2 nanoparticles (NPs) using ssuccessive ionic layer adsorption and reaction (SILAR) methode. EDX measurements ensure the success adsorption of alloyed Cd1-xPbxS QDs onto the TiO2 electrode. At 100 mW/cm2 (AM 1.5) sun illumination, the photovoltaic performance of alloyed Cd1-xPbxS QDs sensitized solar cells (QDSSCs) was measured. The maximum values of Jsc (1.92 mA/cm2) and η (0.36%) for the alloyed Cd1-xPbxS QDSSCs were obtained when the molar ratio of Cd/Pb is 0.33/0.67. the open circuit voltage (Voc) is equal 0.61 ± 0.01 V for all alloyed Cd1-xPbxS QDSSCs. The electron back recombination rates decrease considerably for alloyed Cd1-xPbxS QDSSCs as x value increases, peaking at 0.67. The electron lifetime (τ) for Cd0.33Pb0.67S QDSSCs is one order of magnitude larger than that of the other alloyed Cd1-xPbxS QDSSCs with different x value. Under ON-OFF cycles to solar illumination, the open circuit voltage decay measurements show the high sensitivity and reproducibility of alloyed Cd1-xPbxS QDSSCs.

  11. High performance alloy electroforming

    NASA Technical Reports Server (NTRS)

    Malone, G. A.; Winkelman, D. M.

    1989-01-01

    Electroformed copper and nickel are used in structural applications for advanced propellant combustion chambers. An improved process has been developed by Bell Aerospace Textron, Inc. wherein electroformed nickel-manganese alloy has demonstrated superior mechanical and thermal stability when compared to previously reported deposits from known nickel plating processes. Solution chemistry and parametric operating procedures are now established and material property data is established for deposition of thick, large complex shapes such as the Space Shuttle Main Engine. The critical operating variables are those governing the ratio of codeposited nickel and manganese. The deposition uniformity which in turn affects the manganese concentration distribution is affected by solution resistance and geometric effects as well as solution agitation. The manganese concentration in the deposit must be between 2000 and 3000 ppm for optimum physical properties to be realized. The study also includes data regarding deposition procedures for achieving excellent bond strength at an interface with copper, nickel-manganese or INCONEL 718. Applications for this electroformed material include fabrication of complex or re-entry shapes which would be difficult or impossible to form from high strength alloys such as INCONEL 718.

  12. Oxidation resistant alloys, method for producing oxidation resistant alloys

    DOEpatents

    Dunning, John S.; Alman, David E.

    2002-11-05

    A method for producing oxidation-resistant austenitic alloys for use at temperatures below 800 C. comprising of: providing an alloy comprising, by weight %: 14-18% chromium, 15-18% nickel, 1-3% manganese, 1-2% molybdenum, 2-4% silicon, 0% aluminum and the balance being iron; heating the alloy to 800 C. for between 175-250 hours prior to use in order to form a continuous silicon oxide film and another oxide film. The method provides a means of producing stainless steels with superior oxidation resistance at temperatures above 700 C. at a low cost

  13. Oxidation resistant alloys, method for producing oxidation resistant alloys

    DOEpatents

    Dunning, John S.; Alman, David E.

    2002-11-05

    A method for producing oxidation-resistant austenitic alloys for use at temperatures below 800.degree. C. comprising of: providing an alloy comprising, by weight %: 14-18% chromium, 15-18% nickel, 1-3% manganese, 1-2% molybdenum, 2-4% silicon, 0% aluminum and the balance being iron; heating the alloy to 800.degree. C. for between 175-250 hours prior to use in order to form a continuous silicon oxide film and another oxide film. The method provides a means of producing stainless steels with superior oxidation resistance at temperatures above 700.degree. C. at a low cost

  14. Concentrating Solar Power Projects - Planta Solar 20 | Concentrating Solar

    Science.gov Websites

    (CSP) project, with data organized by background, participants, and power plant configuration. Abengoa Solar's Planta Solar 20 (PS20) is a 20-megawatt power tower plant being constructed next to the PS10 tower percent. The 160-meter tower was designed to reduce the visual impact of its height. The plant has the

  15. Concentrating Solar Power Projects - Kathu Solar Park | Concentrating Solar

    Science.gov Websites

    ): Eskom Plant Configuration Solar Field Heat-Transfer Fluid Type: Thermal oil Solar-Field Inlet Temp: 293Â (Net): 100.0 MW Output Type: Steam Rankine Thermal Storage Storage Type: 2-tank indirect Storage Capacity: 4.5 hours Thermal Storage Description: Molten salt

  16. Concentrating Solar Power Projects - ACME Solar Tower | Concentrating Solar

    Science.gov Websites

    : 2.5 MW Gross: 2.5 MW Status: Operational Start Year: 2011 Do you have more information, corrections Contact(s): SolarPACES Start Production: April 2011 Participants Developer(s): ACME Group ; eSolar Owner(s

  17. The fractography of casting alloys

    SciTech Connect

    Powell, G.W.

    1994-10-01

    Several types of casting alloys were fractured using various loading modes (uniaxial tension, bending, impact, and torsion, and cyclic stressing), and the corresponding mechanical properties were determined. The unetched and etched fracture surfaces and the microstructures were examined using conventional techniques. The types of casting alloys that were the subjects f these investigations include gray iron, ductile iron, cast steel, and aluminum-base alloys (A380, A356, and 319). The fractographic studies have yielded these generalizations regarding the topography of the fracture surfaces. In the case of low-ductility alloys such as gray iron and the aluminum-base alloys, the tensile edge of amore » fracture surface produced by a stress system with a strong bending-moment component has a highly irregular contour, whereas the compressive edge of the fracture surface is quite straight and parallel to the bend axis. On the other hand, the periphery of a fracture surface produced by uniaxial tension has a completely irregular contour. The fracture surface produced by cyclic loading of a gray iron does not display any macroscopic evidence (such as a thumb nail) of the loading mode. However, the fracture surface of each of the other casting alloys displays clear, macroscopic evidence of failure induced by fatigue. The aluminum-base alloys fracture completely within the interdendritic region of the microstructure when subjected to monotonic loading by uniaxial tension or bending, whereas a fatigue crack propagates predominantly through the primary crystals of the microstructure.« less

  18. Solar Design Workbook

    SciTech Connect

    Franta, G.; Baylin, F.; Crowther, R.

    1981-06-01

    This Solar Design Workbook presents solar building design applications for commercial buildir^s. The book is divided into four sections. The first section describes the variety of solar applications in buildings including conservation aspects, solar fundamentals, passive systems, active systems, daylighting, and other solar options. Solar system design evaluation techniques including considerations for building energy requirements, passive systems, active systems, and economics are presented in Section II. The third section attempts to assist the designer in the building design process for energy conservation and solar applications including options and considerations for pre-design, design, and post-design phases. The information required for themore » solar design proee^ has not been fully developed at this time. Therefore, Section III is incomplete, but an overview of the considerations with some of the design proces elements is presented. Section IV illustrates ease studies that utilize solar applications in the building design.« less

  19. Solar Adaptive Optics.

    PubMed

    Rimmele, Thomas R; Marino, Jose

    Adaptive optics (AO) has become an indispensable tool at ground-based solar telescopes. AO enables the ground-based observer to overcome the adverse effects of atmospheric seeing and obtain diffraction limited observations. Over the last decade adaptive optics systems have been deployed at major ground-based solar telescopes and revitalized ground-based solar astronomy. The relatively small aperture of solar telescopes and the bright source make solar AO possible for visible wavelengths where the majority of solar observations are still performed. Solar AO systems enable diffraction limited observations of the Sun for a significant fraction of the available observing time at ground-based solar telescopes, which often have a larger aperture than equivalent space based observatories, such as HINODE. New ground breaking scientific results have been achieved with solar adaptive optics and this trend continues. New large aperture telescopes are currently being deployed or are under construction. With the aid of solar AO these telescopes will obtain observations of the highly structured and dynamic solar atmosphere with unprecedented resolution. This paper reviews solar adaptive optics techniques and summarizes the recent progress in the field of solar adaptive optics. An outlook to future solar AO developments, including a discussion of Multi-Conjugate AO (MCAO) and Ground-Layer AO (GLAO) will be given. Supplementary material is available for this article at 10.12942/lrsp-2011-2.

  20. Dendritic Alloy Solidification Experiment (DASE)

    NASA Technical Reports Server (NTRS)

    Beckermann, C.; Karma, A.; Steinbach, I.; deGroh, H. C., III

    2001-01-01

    A space experiment, and supporting ground-based research, is proposed to study the microstructural evolution in free dendritic growth from a supercooled melt of the transparent model alloy succinonitrile-acetone (SCN-ACE). The research is relevant to equiaxed solidification of metal alloy castings. The microgravity experiment will establish a benchmark for testing of equiaxed dendritic growth theories, scaling laws, and models in the presence of purely diffusive, coupled heat and solute transport, without the complicating influences of melt convection. The specific objectives are to: determine the selection of the dendrite tip operating state, i.e. the growth velocity and tip radius, for free dendritic growth of succinonitrile-acetone alloys; determine the growth morphology and sidebranching behavior for freely grown alloy dendrites; determine the effects of the thermal/solutal interactions in the growth of an assemblage of equiaxed alloy crystals; determine the effects of melt convection on the free growth of alloy dendrites; measure the surface tension anisotropy strength of succinon itrile -acetone alloys establish a theoretical and modeling framework for the experiments. Microgravity experiments on equiaxed dendritic growth of alloy dendrites have not been performed in the past. The proposed experiment builds on the Isothermal Dendritic Growth Experiment (IDGE) of Glicksman and coworkers, which focused on the steady growth of a single crystal from pure supercooled melts (succinonitrile and pivalic acid). It also extends the Equiaxed Dendritic Solidification Experiment (EDSE) of the present investigators, which is concerned with the interactions and transients arising in the growth of an assemblage of equiaxed crystals (succinonitrile). However, these experiments with pure substances are not able to address the issues related to coupled heat and solute transport in growth of alloy dendrites.

  1. Electrical and structural properties of In-implanted Si 1–xGe x alloys

    DOE PAGES

    Feng, Ruixing; Kremer, F.; Sprouster, D. J.; ...

    2016-01-14

    Here, we report on the effects of dopant concentration and substrate stoichiometry on the electrical and structural properties of In-implanted Si 1–xGe x alloys. Correlating the fraction of electrically active In atoms from Hall Effect measurements with the In atomic environment determined by X-ray absorption spectroscopy, we observed the transition from electrically active, substitutional In at low In concentration to electrically inactive metallic In at high In concentration. The In solid-solubility limit has been quantified and was dependent on the Si 1–xGe x alloy stoichiometry; the solid-solubility limit increased as the Ge fraction increased. This result was consistent with densitymore » functional theory calculations of two In atoms in a Si 1–xGe x supercell that demonstrated that In–In pairing was energetically favorable for x ≲ 0.7 and energetically unfavorable for x ≳ 0.7. Transmission electron microscopy imaging further complemented the results described earlier with the In concentration and Si 1–xGe x alloy stoichiometry dependencies readily visible. We have demonstrated that low resistivity values can be achieved with In implantation in Si 1–xGe x alloys, and this combination of dopant and substrate represents an effective doping protocol.« less

  2. Mechanistic Origin of the Ultrastrong Adhesion between Graphene and a-SiO2: Beyond van der Waals.

    PubMed

    Kumar, Sandeep; Parks, David; Kamrin, Ken

    2016-07-26

    The origin of the ultrastrong adhesion between graphene and a-SiO2 has remained a mystery. This adhesion is believed to be predominantly van der Waals (vdW) in nature. By rigorously analyzing recently reported blistering and nanoindentation experiments, we show that the ultrastrong adhesion between graphene and a-SiO2 cannot be attributed to vdW forces alone. Our analyses show that the fracture toughness of the graphene/a-SiO2 interface, when the interfacial adhesion is modeled with vdW forces alone, is anomalously weak compared to the measured values. The anomaly is related to an ultrasmall fracture process zone (FPZ): owing to the lack of a third dimension in graphene, the FPZ for the graphene/a-SiO2 interface is extremely small, and the combination of predominantly tensile vdW forces, distributed over such a small area, is bound to result in a correspondingly small interfacial fracture toughness. Through multiscale modeling, combining the results of finite element analysis and molecular dynamics simulations, we show that the adhesion between graphene and a-SiO2 involves two different kinds of interactions: one, a weak, long-range interaction arising from vdW adhesion and, second, discrete, short-range interactions originating from graphene clinging to the undercoordinated Si (≡Si·) and the nonbridging O (≡Si-O·) defects on a-SiO2. A strong resistance to relative opening and sliding provided by the latter mechanism is identified as the operative mechanism responsible for the ultrastrong adhesion between graphene and a-SiO2.

  3. Surface roughness in XeF{sub 2} etching of a-Si/c-Si(100)

    SciTech Connect

    Stevens, A.A.E.; Beijerinck, H.C.W.

    2005-01-01

    Single wavelength ellipsometry and atomic force microscopy (AFM) have been applied in a well-calibrated beam-etching experiment to characterize the dynamics of surface roughening induced by chemical etching of a {approx}12 nm amorphous silicon (a-Si) top layer and the underlying crystalline silicon (c-Si) bulk. In both the initial and final phase of etching, where either only a-Si or only c-Si is exposed to the XeF{sub 2} flux, we observe a similar evolution of the surface roughness as a function of the XeF{sub 2} dose proportional to D(XeF{sub 2}){sup {beta}} with {beta}{approx_equal}0.2. In the transition region from the pure amorphous to themore » pure crystalline silicon layer, we observe a strong anomalous increase of the surface roughness proportional to D(XeF{sub 2}){sup {beta}} with {beta}{approx_equal}1.5. Not only the growth rate of the roughness increases sharply in this phase, also the surface morphology temporarily changes to a structure that suggests a cusplike shape. Both features suggest that the remaining a-Si patches on the surface act effectively as a capping layer which causes the growth of deep trenches in the c-Si. The ellipsometry data on the roughness are corroborated by the AFM results, by equating the thickness of the rough layer to 6 {sigma}, with {sigma} the root-mean-square variation of the AFM's distribution function of height differences. In the AFM data, the anomalous behavior is reflected in a too small value of {sigma} which again suggests narrow and deep surface features that cannot be tracked by the AFM tip. The final phase morphology is characterized by an effective increase in surface area by a factor of two, as derived from a simple bilayer model of the reaction layer, using the experimental etch rate as input. We obtain a local reaction layer thickness of 1.5 monolayer consistent with the 1.7 ML value of Lo et al. [Lo et al., Phys. Rev. B 47, 648 (1993)] that is also independent of surface roughness.« less

  4. The mechanical, optoelectronic and thermoelectric properties of NiYSn (Y = Zr and Hf) alloys

    NASA Astrophysics Data System (ADS)

    Hamioud, Farida; Mubarak, A. A.

    2017-09-01

    First-principle calculations are performed using DFT as implemented in Wien2k code to compute the mechanical, electronic, optical and thermoelectric properties of NiYSn (Y = Zr and Hf) alloys. The computed lattice constants, bulk modulus and cohesive energy of these alloys at 0 K and 0 GPa are performed. NiZrSn and NiHfSn are found to be anisotropic and elastically stable. Furthermore, both alloys are confirmed to be thermodynamically stable by the calculated values of the standard enthalpy of formation. The Young’s and shear moduli values show that NiZrSn seems to be stiffer than NiHfSn. The optical properties are performed using the dielectric function. Some beneficial optoelectronic applications are found as exposed in the optical spectra. Moreover, the alloys are classified as good insulators for solar heating. The thermoelectric properties as a function of temperature are computed utilizing BoltzTrap code. The major charge carriers are found to be electrons and the alloys are classified as p-type doping alloys.

  5. Alloy design for intrinsically ductile refractory high-entropy alloys

    NASA Astrophysics Data System (ADS)

    Sheikh, Saad; Shafeie, Samrand; Hu, Qiang; Ahlström, Johan; Persson, Christer; Veselý, Jaroslav; Zýka, Jiří; Klement, Uta; Guo, Sheng

    2016-10-01

    Refractory high-entropy alloys (RHEAs), comprising group IV (Ti, Zr, Hf), V (V, Nb, Ta), and VI (Cr, Mo, W) refractory elements, can be potentially new generation high-temperature materials. However, most existing RHEAs lack room-temperature ductility, similar to conventional refractory metals and alloys. Here, we propose an alloy design strategy to intrinsically ductilize RHEAs based on the electron theory and more specifically to decrease the number of valence electrons through controlled alloying. A new ductile RHEA, Hf0.5Nb0.5Ta0.5Ti1.5Zr, was developed as a proof of concept, with a fracture stress of close to 1 GPa and an elongation of near 20%. The findings here will shed light on the development of ductile RHEAs for ultrahigh-temperature applications in aerospace and power-generation industries.

  6. Laser surface alloying on aluminum and its alloys: A review

    NASA Astrophysics Data System (ADS)

    Chi, Yiming; Gu, Guochao; Yu, Huijun; Chen, Chuanzhong

    2018-01-01

    Aluminum and its alloys have been widely used in aerospace, automotive and transportation industries owing to their excellent properties such as high specific strength, good ductility and light weight. Surface modification is of crucial importance to the surface properties of aluminum and its alloys since high coefficient of friction, wear characteristics and low hardness have limited their long term performance. Laser surface alloying is one of the most effective methods of producing proper microstructure by means of non-equilibrium solidification which results from rapid heating and cooling. In this paper, the influence of different processing parameters, such as laser power and scanning velocity is discussed. The developments of various material systems including ceramics, metals or alloys, and metal matrix composites (MMCs) are reviewed. The microstructure, hardness, wear properties and other behaviors of laser treated layer are analyzed. Besides, the existing problems during laser surface treatment and the corresponding solutions are elucidated and the future developments are predicted.

  7. Polyimide based amorphous silicon solar modules

    NASA Technical Reports Server (NTRS)

    Jeffrey, Frank R.; Grimmer, Derrick P.; Martens, Steven A.; Abudagga, Khaled; Thomas, Michael L.; Noak, Max

    1993-01-01

    Requirements for space power are increasingly emphasizing lower costs and higher specific powers. This results from new fiscal constraints, higher power requirements for larger applications, and the evolution toward longer distance missions such as a Lunar or Mars base. The polyimide based a-Si modules described are being developed to meet these needs. The modules consist of tandem a-Si solar cell material deposited directly on a roll of polyimide. A laser scribing/printing process subdivides the deposition into discrete cell strips which are series connected to produce the required voltage without cutting the polymer backing. The result is a large, monolithic, blanket type module approximately 30 cm wide and variable in length depending on demand. Current production modules have a specific power slightly over 500 W/Kg with room for significant improvement. Costs for the full blanket modules range from $30/Watt to $150/Watt depending on quantity and engineering requirements. Work to date focused on the modules themselves and adjusting them for the AMO spectrum. Work is needed yet to insure that the modules are suitable for the space environment.

  8. Dual-junction GaAs solar cells and their application to smart stacked III–V//Si multijunction solar cells

    NASA Astrophysics Data System (ADS)

    Sugaya, Takeyoshi; Tayagaki, Takeshi; Aihara, Taketo; Makita, Kikuo; Oshima, Ryuji; Mizuno, Hidenori; Nagato, Yuki; Nakamoto, Takashi; Okano, Yoshinobu

    2018-05-01

    We report high-quality dual-junction GaAs solar cells grown using solid-source molecular beam epitaxy and their application to smart stacked III–V//Si quadruple-junction solar cells with a two-terminal configuration for the first time. A high open-circuit voltage of 2.94 eV was obtained in an InGaP/GaAs/GaAs triple-junction top cell that was stacked to a Si bottom cell. The short-circuit current density of a smart stacked InGaP/GaAs/GaAs//Si solar cell was in good agreement with that estimated from external quantum efficiency measurements. An efficiency of 18.5% with a high open-circuit voltage of 3.3 V was obtained in InGaP/GaAs/GaAs//Si two-terminal solar cells.

  9. Solar Thermal Propulsion

    NASA Technical Reports Server (NTRS)

    Gerrish, Harold P., Jr.

    2003-01-01

    This paper presents viewgraphs on Solar Thermal Propulsion (STP). Some of the topics include: 1) Ways to use Solar Energy for Propulsion; 2) Solar (fusion) Energy; 3) Operation in Orbit; 4) Propulsion Concepts; 5) Critical Equations; 6) Power Efficiency; 7) Major STP Projects; 8) Types of STP Engines; 9) Solar Thermal Propulsion Direct Gain Assembly; 10) Specific Impulse; 11) Thrust; 12) Temperature Distribution; 13) Pressure Loss; 14) Transient Startup; 15) Axial Heat Input; 16) Direct Gain Engine Design; 17) Direct Gain Engine Fabrication; 18) Solar Thermal Propulsion Direct Gain Components; 19) Solar Thermal Test Facility; and 20) Checkout Results.

  10. A niching genetic algorithm applied to optimize a SiC-bulk crystal growth system

    NASA Astrophysics Data System (ADS)

    Su, Juan; Chen, Xuejiang; Li, Yuan; Pons, Michel; Blanquet, Elisabeth

    2017-06-01

    A niching genetic algorithm (NGA) was presented to optimize a SiC-bulk crystal growth system by PVT. The NGA based on clearing mechanism and its combination method with heat transfer model for SiC crystal growth were described in details. Then three inverse problems for optimization of growth system were carried out by NGA. Firstly, the radius of blind hole was optimized to decrease the radial temperature gradient along the substrate while the center temperature on the surface of substrate is fixed at 2500 K. Secondly, insulation materials with anisotropic thermal conductivities were selected to obtain much higher growth rate as 600, 800 and 1000 μm/h. Finally, the density of coils was also rearranged to minimize the temperature variation in the SiC powder. All the results were analyzed and discussed.

  11. Molecular dynamics study about the effect of substrate temperature on a-Si:H structure

    NASA Astrophysics Data System (ADS)

    Luo, Yaorong; Gong, Hongyong; Zhou, Naigen; Huang, Haibin; Zhou, Lang

    2018-01-01

    Molecular dynamics simulation of the microstructure of hydrogenated amorphous silicon (a-Si:H) thin film with different substrate temperatures has been performed based on the Tersoff potential. The results showed that: the silicon thin film maintained amorphous structure in the substrate temperature range from 200 to 1000 K; high substrate temperature could smooth the surface. The first neighbour Voronoi polyhedron was dominated by the tetrahedron. When the substrate temperature increased, the content of tetrahedrons increased due to the transition from pentahedrons and hexahedrons to tetrahedrons. The change of the second neighbour Voronoi polyhedron could be classified into two cases: one case with low medium coordination number decreased as temperature increased, while the other one with high medium coordination number showed an opposite change tendency. It indicated that the local paracrystalline structure arrangement of the second neighbour atoms had been enhanced as substrate temperature rose.

  12. White light emission and optical gains from a Si nanocrystal thin film

    NASA Astrophysics Data System (ADS)

    Wang, Dong-Chen; Hao, Hong-Chen; Chen, Jia-Rong; Zhang, Chi; Zhou, Jing; Sun, Jian; Lu, Ming

    2015-11-01

    We report a Si nanocrystal thin film consisting of free-standing Si nanocrystals, which can emit white light and show positive optical gains for its red, green and blue (RGB) components under ultraviolet excitation. Si nanocrystals with ϕ = 2.31 ± 0.35 nm were prepared by chemical etching of Si powder, followed by filtering. After being mixed with SiO2 sol-gel and thermally annealed, a broadband photoluminescence (PL) from the thin film was observed. The RGB ratio of the PL can be tuned by changing the annealing temperature or atmosphere, which is 1.00/3.26/4.59 for the pure white light emission. The origins of the PL components could be due to differences in oxygen-passivation degree for Si nanocrystals. The results may find applications in white-light Si lasing and Si lighting.

  13. Channel width dependence of electrical characteristics of a-Si:H TFTs under bending stresses

    NASA Astrophysics Data System (ADS)

    Oh, Hyungon; Cho, Kyoungah; Kim, Sangsig

    2017-04-01

    In this study, we investigate the electrical characteristics of bendable a-Si:H thin-film transistors (TFTs) with various channel widths as a function of bending stress. Compared with a narrower channel TFT, a wider channel TFT exhibits a stable performance even at a bending strain of 1.3%. Our stress and strain distribution analysis reveals an inverse relationship between the channel width and the channel stress. As the channel width widens from 8 to 50 μm, the stress experienced by the middle channel region decreases from 545 to 277 MPa. Moreover, a 50 μm-channel-width TFT operates stably even after a 15 000 bending cycle while the 8 μm-channel-width TFT fails to operate after a 2000 bending cycle.

  14. High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator

    NASA Technical Reports Server (NTRS)

    Meredith, Roger D.; Neudeck, Philip G.; Ponchak, George E.; Beheim, Glenn M.; Scardelletti, Maximilian; Jordan, Jennifer L.; Chen, Liang-Yu; Spry, David J.; Krawowski, Michael J.; Hunter, Gary W.

    2011-01-01

    In an effort to develop harsh environment electronic and sensor technologies for aircraft engine safety and monitoring, we have used capacitive-based pressure sensors to shift the frequency of a SiC-electronics-based oscillator to produce a pressure-indicating signal that can be readily transmitted, e.g. wirelessly, to a receiver located in a more benign environment. Our efforts target 500 C, a temperature well above normal operating conditions of commercial circuits but within areas of interest in aerospace engines, deep mining applications and for future missions to the Venus atmosphere. This paper reports for the first time a ring oscillator circuit integrated with a capacitive pressure sensor, both operating at 500 C. This demonstration represents a significant step towards a wireless pressure sensor that can operate at 500 C and confirms the viability of 500 C electronic sensor systems.

  15. Design, fabrication and characterization of an a-Si:H-based UV detector for sunburn applications

    NASA Astrophysics Data System (ADS)

    Bayat, Khadijeh; Vygranenko, Yuriy; Sazonov, Andrei; Farrokh-Baroughi, Mahdi

    2006-12-01

    A thin-film a-Si:H pin detector was developed for selective detection of UVA (320-400 nm) radiation. In order for the fabrication technology to be transferable onto flexible substrates, all of the processing steps were conducted at temperatures less than 125 °C. The measured saturation current as low as 2 pA cm-2 and the ideality factor of 1.47 show that the pin diodes have a good quality i-layer as well as p-i and n-i interfaces. The film thicknesses were optimized to suppress the detector sensitivity in the visible spectral range, and the peak of spectral response was observed at 410 nm. The selectivity estimated from the ratio of the photocurrent generated by UVA absorption to the total photocurrent is 21%.

  16. Silane and germane plasma diagnostics for depositing photosensitive a-SiGe:H films

    NASA Technical Reports Server (NTRS)

    Shing, Y. H.; Perry, J. W.; Allevato, C. E.

    1988-01-01

    Highly photosensitive a-SiGe:H films with a light-to-dark conductivity ratio of 8 x 103 and an optical bandgap of 1.40 eV have been produced by RF glow discharge using hydrogen dilution of SiH4 and GeH4 mixed gas plasma. The critical role of hydrogen dilution in GeH4 containing plasmas is to suppress the gas-phase polymerization and promote the incorporation of Ge into the film. It is observed that inelastic laser light scattering of the RF plasma is a sensitive method for monitoring the onset of the gas-phase polymerization. In situ coherent anti-Stokes Raman spectroscopy measurements have shown that the dissociation rate of GeH4 is a factor of three larger than that of SiH4.

  17. An Insidious Mode of Oxidative Degradation in a SiC-SiC Composite

    NASA Technical Reports Server (NTRS)

    Ogbuji, Linus U. J. T.

    1997-01-01

    The oxidative durability of a SiC-SiC composite with Hi-Nicalon fiber and BN interphase was investigated at 800 C (where pesting is known to occur in SiC-SiC composites) for exposure durations of up to 500 hours and in a variety of oxidant mixes and flow rates, ranging from quasi-stagnant room air, through slow flowing O2 containing 30-90% H2O, to the high-velocity flame of a burner rig. Degradation of the composite was determined from residual strength and fracture strain in post-exposure mechanical tests and correlated with microstructural evidence of damage to fiber and interphase. The severest degradation of composite behavior was found to occur in the bumer rig, and is shown to be connected with the high oxidant velocity and substantial moisture content, as well as a thin sublayer of carbon indicated to form between fiber and interphase during composite processing.

  18. Dangling-bond logic gates on a Si(100)-(2 × 1)-H surface.

    PubMed

    Kawai, Hiroyo; Ample, Francisco; Wang, Qing; Yeo, Yong Kiat; Saeys, Mark; Joachim, Christian

    2012-03-07

    Atomic-scale Boolean logic gates (LGs) with two inputs and one output (i.e. OR, NOR, AND, NAND) were designed on a Si(100)-(2 × 1)-H surface and connected to the macroscopic scale by metallic nano-pads physisorbed on the Si(100)-(2 × 1)-H surface. The logic inputs are provided by saturating and unsaturating two surface Si dangling bonds, which can, for example, be achieved by adding and extracting two hydrogen atoms per input. Quantum circuit design rules together with semi-empirical elastic-scattering quantum chemistry transport calculations were used to determine the output current intensity of the proposed switches and LGs when they are interconnected to the metallic nano-pads by surface atomic-scale wires. Our calculations demonstrate that the proposed devices can reach ON/OFF ratios of up to 2000 for a running current in the 10 µA range.

  19. Application of Vacancy Injection Gettering to Improve Efficiency of Solar Cells Produced by Millinet Solar: Cooperative Research and Development Final Report, CRADA Number CRD-10-417

    SciTech Connect

    Sopori, B.

    2012-07-01

    NREL will apply vacancy injection gettering (VIG) to Millinet solar cells and evaluate the performance improvement produced by this process step. The VIG will be done in conjunction with the formation of a back, Al-alloyed, contact. Millinet Solar will provide NREL with cells having AR coating on the front side and screen-printed Al on the backside, which will be processed in the NREL's optical furnace to perform simultaneous VIG and back contact alloying with deep BSF. These cells will be sent back to Millinet solar for a screen-printed front/side contact mask, followed by a second firing at NREL. Detailed analysesmore » will be performed to determine improvements due to BSF and VIG.« less

  20. Implementation of a Si/SiC hybrid optically controlled high-power switching device

    NASA Astrophysics Data System (ADS)

    Bhadri, Prashant; Ye, Kuntao; Guliants, E.; Beyette, Fred R., Jr.

    2002-03-01

    The ever-increasing performance and economy of operation requirements placed on commercial and military transport aircraft are resulting in very complex systems. As a result, the use of fiber optic component technology has lead to high data throughput, immunity to EMI, reduced certification and maintenance costs and reduced weight features. In particular, in avionic systems, data integrity and high data rates are necessary for stable flight control. Fly-by-Light systems that use optical signals to actuate the flight control surfaces of an aircraft have been suggested as a solution to the EMI problem in avionic systems. Current fly-by-light systems are limited by the lack of optically activated high-power switching devices. The challenge has been the development of an optoelectronic switching technology that can withstand the high power and harsh environmental conditions common in a flight surface actuation system. Wide bandgap semiconductors such as Silicon Carbide offer the potential to overcome both the temperature and voltage blocking limitations that inhibit the use of Silicon. Unfortunately, SiC is not optically active at the near IR wavelengths where communications grade light sources are readily available. Thus, we have proposed a hybrid device that combines a silicon based photoreceiver model with a SiC power transistor. When illuminated with the 5mW optical control signal the silicon chip produces a 15mA drive current for a SiC Darlington pair. The SiC Darlington pair then produces a 150 A current that is suitable for driving an electric motor with sufficient horsepower to actuate the control surfaces on an aircraft. Further, when the optical signal is turned off, the SiC is capable of holding off a 270 V potential to insure that the motor drive current is completely off. We present in this paper the design and initial tests from a prototype device that has recently been fabricated.

  1. High strength ferritic alloy

    DOEpatents

    Hagel, William C.; Smidt, Frederick A.; Korenko, Michael K.

    1977-01-01

    A high-strength ferritic alloy useful for fast reactor duct and cladding applications where an iron base contains from about 9% to about 13% by weight chromium, from about 4% to about 8% by weight molybdenum, from about 0.2% to about 0.8% by weight niobium, from about 0.1% to about 0.3% by weight vanadium, from about 0.2% to about 0.8% by weight silicon, from about 0.2% to about 0.8% by weight manganese, a maximum of about 0.05% by weight nitrogen, a maximum of about 0.02% by weight sulfur, a maximum of about 0.02% by weight phosphorous, and from about 0.04% to about 0.12% by weight carbon.

  2. Nonergodicity in binary alloys

    NASA Astrophysics Data System (ADS)

    Son, Leonid; Sidorov, Valery; Popel, Pjotr; Shulgin, Dmitry

    2015-09-01

    For binary liquids with limited miscibility of the components, we provide the corrections to the equation of state which arise from the nonergogic diffusivity. It is shown that these corrections result in lowering of critical miscibility point. In some cases, it may result in a bifurcation of miscibility curve: the mixtures near 50% concentration which are homogeneous at the microscopic level, occur to be too stable to provide a quasi - eutectic triple point. These features provide a new look on the phase diagrams of some binary systems. In present work, we discuss Ga-Pb, Fe-Cu, and Cu-Zr alloys. Our investigation corresponds their complex behavior in liquid state to the shapes of their phase diagrams.

  3. Japanese Next Solar Mission: SOLAR-C

    NASA Astrophysics Data System (ADS)

    Sakao, T.; Solar-C, W. G.

    2008-09-01

    We present introductory overview on the next Japanese solar mission, SOLAR-C, which has been envisaged following the success of Hinode (SOLAR-B) mission. Two plans, Plan A and Plan B, are under extensive study from science objectives as well as engineering point of view. Plan A aims to perform out-of-ecliptic observations for investigating, with helioseismic approach, internal structure and dynamo mechanisms of the Sun. It also explores polar regions where fast solar wind is believed to be originated. The baseline orbit for Plan A is a circular orbit of 1 AU distance from the Sun, with its inclination at around, or greater than, 40 degrees. Plan B pursues small-scale plasma processes and structures in the solar atmosphere which attract growing interest, following Hinode discoveries, for understanding fully dynamism and magnetic nature of the atmosphere. With Plan B, high-angular-resolution investigation of the entire solar atmosphere (from the photosphere to the corona, including their interface layers, i.e., chromosphere and transition region) is to be performed with enhanced spectroscopic and spectro-polarimetric capability as compared with Hinode, together with enhanced sensitivity towards ultra-violet wavelengths. There has been wide and evolving support for the SOLAR-C mission not only from solar physics community but also from related research areas in Japan. We request SOLAR-C to be launched in mid. 2010s. Following the highly-successful achievements of international collaboration for Yohkoh and Hinode, we strongly hope the SOLAR-C mission be realized under extensive collaboration with European and U.S. partners. Japanese SOLAR-C working group was officially approved by ISAS/JAXA in December 2007 for mission studies and promoting international collaboration. It is expected that a single mission plan is to be proposed after one year of investigation on Plan A and Plan B.

  4. DIY Solar Market Analysis Webinar Series: Solar Resource and Technical

    Science.gov Websites

    Series: Solar Resource and Technical Potential DIY Solar Market Analysis Webinar Series: Solar Resource and Technical Potential Wednesday, June 11, 2014 As part of a Do-It-Yourself Solar Market Analysis summer series, NREL's Solar Technical Assistance Team (STAT) presented a live webinar titled, "Solar

  5. Simplified Calculation Of Solar Fluxes In Solar Receivers

    NASA Technical Reports Server (NTRS)

    Bhandari, Pradeep

    1990-01-01

    Simplified Calculation of Solar Flux Distribution on Side Wall of Cylindrical Cavity Solar Receivers computer program employs simple solar-flux-calculation algorithm for cylindrical-cavity-type solar receiver. Results compare favorably with those of more complicated programs. Applications include study of solar energy and transfer of heat, and space power/solar-dynamics engineering. Written in FORTRAN 77.

  6. Validation Report for the EO-1 Lightweight Flexible Solar Array Experiment

    NASA Technical Reports Server (NTRS)

    Carpenter, Bernie; Lyons, John; Day, John (Technical Monitor)

    2001-01-01

    The controlled deployment of the Lightweight Flexible Solar Array (LFSA) experiment using the shape memory alloy release and deployment system has been demonstrated. Work remains to be done in increasing the efficiency of Copper Indium Diselinide (CIS) terminations to the flexible harness that carries current from the array to the I-V measurement electronics.

  7. Improved performance of flexible amorphous silicon solar cells with silver nanowires

    NASA Astrophysics Data System (ADS)

    Chen, Y. R.; Li, Z. Q.; Chen, X. H.; Liu, C.; Ye, X. J.; Wang, Z. B.; Sun, Z.; Huang, S. M.

    2012-12-01

    A novel hybrid electrode structure using Ag nanowires (NWs) to create surface plasmons to enhance light trapping is designed and applied on the front surface of hydrogenated amorphous silicon (a-Si:H) solar cells on steel substrates, targeting broad-band absorption enhancements. Ag NWs were synthesized using a soft and self-seeding process. The produced Ag NWs were deposited on indium tin oxide (ITO) glass substrates or the ITO layers of the as-prepared flexible a-Si:H solar cells to form Ag NW-ITO hybrid electrodes. The Ag NW-ITO hybrid electrodes were optimized to achieve maximum optical enhancement using surface plasmons and obtain good electrical contacts in cells. Finite-element electromagnetic simulations confirmed that the presence of the Ag NWs resulted in increased electromagnetic fields within the a-Si:H layer. Compared to the cell with conventional ITO electrode, the measured quantum efficiency of the best performing a-Si:H cell shows an obvious enhancement in the wavelength range from 330 nm to 600 nm. The cell based on the optimized Ag NW-ITO demonstrates an increase about 4% in short-circuit current density and over 6% in power conversion efficiency under AM 1.5 illumination.

  8. Device physics of hydrogenated amorphous silicon solar cells

    NASA Astrophysics Data System (ADS)

    Liang, Jianjun

    This dissertation reports measurements on and modeling of hydrogenated amorphous silicon (a-Si:H) nip solar cells. Cells with thicknesses from 200-900 nm were prepared at United Solar Ovonic LLC. The current density-voltage (J-V) relations were measured under laser illumination (685 nm wavelength, up to 200 mW/cm2) over the temperature range 240 K--350 K. The changes in the cells' open-circuit voltage during extended laser illumination (light-soaking) were measured, as were the cell properties in several light-soaked states. The J-V properties of cells in their as-deposited and light-soaked states converge at low-temperatures. Electromodulation spectra for the cells were also measured over the range 240 K--350 K to determine the temperature-dependent bandgap. These experimental results were compared to computer calculations of J-V relations using the AMPS ((c)Pennsylvania State University) computer code. Bandtail parameters (for electron and hole mobility and recombination) were consistent with published drift-mobility and transient photocurrent measurements on a-Si:H. The open-circuit voltage and power density measurements on as-deposited cells, as a function of temperature and thickness, were predicted well. The calculations support a general "hole mobility limited" approach to analyzing a-Si:H solar cells, and indicate that the doped electrode layers, the as-deposited density of dangling bonds, and the electron mobility are of secondary importance to as-deposited cells. For light-soaked a-Si:H solar cells, incorporation of a density of dangling bonds in the computer calculations accounted satisfactorily for the power and open-circuit voltage measurements, including the low-temperature convergence effect. The calculations indicate that, in the light-soaked state at room-temperature, electron recombination is split nearly evenly between holes trapped in the valence bandtail and holes trapped on dangling bonds. The result supports Stutzmann, Jackson, and Tsai

  9. Solar power roof shingle

    NASA Technical Reports Server (NTRS)

    Forestieri, A. F.; Ratajczak, A. F.; Sidorak, L. G.

    1975-01-01

    Silicon solar cell module provides both all-weather protection and electrical power. Module consists of array of circular silicon solar cells bonded to fiberglass substrate roof shingle with fluorinated ethylene propylene encapsulant.

  10. Solar Wind Five

    NASA Technical Reports Server (NTRS)

    Neugebauer, M. (Editor)

    1983-01-01

    Topics of discussion were: solar corona, MHD waves and turbulence, acceleration of the solar wind, stellar coronae and winds, long term variations, energetic particles, plasma distribution functions and waves, spatial dependences, and minor ions.

  11. Shape memory alloy thaw sensors

    DOEpatents

    Shahinpoor, M.; Martinez, D.R.

    1998-04-07

    A sensor permanently indicates that it has been exposed to temperatures exceeding a critical temperature for a predetermined time period. An element of the sensor made from shape memory alloy changes shape when exposed, even temporarily, to temperatures above the austenitic temperature of the shape memory alloy. The shape change of the SMA element causes the sensor to change between two readily distinguishable states. 16 figs.

  12. Castable hot corrosion resistant alloy

    NASA Technical Reports Server (NTRS)

    Barrett, Charles A. (Inventor); Holt, William H. (Inventor)

    1988-01-01

    Some 10 wt percent nickel is added to an Fe-base alloy which has a ferrite microstructure to improve the high temperature castability and crack resistance while about 0.2 wt percent zirconium is added for improved high temperatur cyclic oxidation and corrosion resistance. The basic material is a high temperature FeCrAl heater alloy, and the addition provides a material suitable for burner rig nozzles.

  13. Characterization of High Ge Content SiGe Heterostructures and Graded Alloy Layers Using Spectroscopic Ellipsometry

    NASA Technical Reports Server (NTRS)

    Heyd, A. R.; Alterovitz, S. A.; Croke, E. T.

    1995-01-01

    Si(x)Ge(1-x)heterostructures on Si substrates have been widely studied due to the maturity of Si technology. However, work on Si(x)Ge)1-x) heterostructures on Ge substrates has not received much attention. A Si(x)Ge(1-x) layer on a Si substrate is under compressive strain while Si(x)Ge(1-x) on Ge is under tensile strain; thus the critical points will behave differently. In order to accurately characterize high Ge content Si(x)Ge(1-x) layers the energy shift algorithm used to calculate alloy compositions, has been modified. These results have been used along with variable angle spectroscopic ellipsometry (VASE) measurements to characterize Si(x)Ge(1-x)/Ge superlattices grown on Ge substrates. The results agree closely with high resolution x-ray diffraction measurements made on the same samples. The modified energy shift algorithm also allows the VASE analysis to be upgraded in order to characterize linearly graded layers. In this work VASE has been used to characterize graded Si(x)Ge(1-x) layers in terms of the total thickness, and the start and end alloy composition. Results are presented for a 1 micrometer Si(x)Ge(1-x) layer linearly graded in the range 0.5 less than or equal to x less than or equal to 1.0.

  14. Highly efficient ultrathin-film amorphous silicon solar cells on top of imprinted periodic nanodot arrays

    SciTech Connect

    Yan, Wensheng, E-mail: yws118@gmail.com; Gu, Min, E-mail: mgu@swin.edu.au; Tao, Zhikuo

    2015-03-02

    The addressing of the light absorption and conversion efficiency is critical to the ultrathin-film hydrogenated amorphous silicon (a-Si:H) solar cells. We systematically investigate ultrathin a-Si:H solar cells with a 100 nm absorber on top of imprinted hexagonal nanodot arrays. Experimental evidences are demonstrated for not only notable silver nanodot arrays but also lower-cost ITO and Al:ZnO nanodot arrays. The measured external quantum efficiency is explained by the simulation results. The J{sub sc} values are 12.1, 13.0, and 14.3 mA/cm{sup 2} and efficiencies are 6.6%, 7.5%, and 8.3% for ITO, Al:ZnO, and silver nanodot arrays, respectively. Simulated optical absorption distribution shows high lightmore » trapping within amorphous silicon layer.« less

  15. Investigation of transient photoresponse of WSSe ternary alloy crystals

    NASA Astrophysics Data System (ADS)

    Chauhan, Payal; Solanki, G. K.; Tannarana, Mohit; Pataniya, Pratik; Patel, K. D.; Pathak, V. M.

    2018-05-01

    Transition metal chalcogenides have been studied intensively in recent time due to their tunability of electronic properties by compositional change, alloying and by transforming bulk material into crystalline 2D structure. These changes lead to the development of verities of next generation opto-electronic device applications such as solar cells, FETs and flexible detectors etc. In present work, we report growth and characterization of crystalline ternary alloy WSSe by direct vapour transport technique. A photodetector is constructed using grown crystals to study its transient photoresponse under polychromatic radiation. The WSSe crystals are mechanically exfoliated to thickness of 3 µm and the lateral dimension of prepared sample is 2.25 mm2. The time-resolved photoresponse is studied under polychromatic illumination of power density ranging from 10 to 40 mW/cm2. The photo response is also studied under different bias voltages ranging from 0.1 V to 0.5 V. The typical photodetector parameters i.e. photocurrent, rise and fall time, responsivity and sensitivity are evaluated and discussed in light of the ternary alloy composition.

  16. Wettability of magnesium based alloys

    NASA Astrophysics Data System (ADS)

    Ornelas, Victor Manuel

    The premise of this project was to determine the wettability behavior of Mg-based alloys using three different liquids. Contact angle measurements were carried out along with utilizing the Zisman method for obtaining values for the critical surface tension. Adhesion energy values were also found through the use of the Young-Dupre equation. This project utilized the Mg-based alloy Mg-2Zn-2Gd with supplemented alpha-Minimum Essential Medium (MEM), Phosphate Buffer Saline solution (PBS), and distilled water. These three liquids are commonly used in cell cultivation and protein adsorption studies. Supplemented alpha-MEM consisted of alpha-MEM, fetal bovine serum, and penicillin-streptomycin. Mg-2Zn-2Gd was used because of observed superior mechanical properties and better corrosion resistance as compared to conventional Mg-alloys. These attractive properties have made it possible for this alloy to be used in biomedical devices within the human body. However, the successful use of this alloy system in the human body requires knowledge in the response of protein adsorption on the alloy surface. Protein adsorption depends on many parameters, but one of the most important factors is the wettability behavior at the surface.

  17. Durable solar mirror films

    SciTech Connect

    O'Neill, Mark B.; Henderson, Andrew J.; Hebrink, Timothy J.

    The present disclosure generally relates to durable solar mirror films, methods of making durable solar mirror films, and constructions including durable solar mirror films. In one embodiment, the present disclosure relates to a solar mirror film comprising: a multilayer optical film layer including having a coefficient of hygroscopic expansion of less than about 30 ppm per percent relative humidity; and a reflective layer having a coefficient of hygroscopic expansion.

  18. Solar UV variability

    NASA Technical Reports Server (NTRS)

    Donnelly, Richard F.

    1989-01-01

    Measurements from the Solar Backscatter Ultraviolet (SBUV) provide solar UV flux in the 160 to 400 nm wavelength range, backed up by independent measurement in the 115 to 305 nm range from the Solar Mesosphere Explorer (SME). The full disc UV flux from spatially resolved measurements of solar activity was modeled, which provides a better understanding of why the UV variations have their observed temporal and wavelength dependencies. Long term, intermediate term, and short term variations are briefly examined.

  19. Durable solar mirror films

    DOEpatents

    O'Neill, Mark B.; Henderson, Andrew J.; Hebrink, Timothy J.; Katare, Rajesh K.; Jing, Naiyong; North, Diane; Peterson, Eric M.

    2017-02-14

    The present disclosure generally relates to durable solar mirror films, methods of making durable solar mirror films, and constructions including durable solar mirror films. In one embodiment, the present disclosure relates to a solar mirror film comprising: a multilayer optical film layer including having a coefficient of hygroscopic expansion of less than about 30 ppm per percent relative humidity; and a reflective layer having a coefficient of hygroscopic expansion.

  20. Carbon arc solar simulator.

    PubMed

    Olson, R A; Parker, J H

    1991-04-01

    Measurements of the spatial, spectral, and temporal characteristics of the beam irradiance of a carbon arc solar simulator are reported. Pyroelectric radiometer measurements of total irradiance and spectroradiometer measurements of spectral irradiance are presented. The solar simulator spectral irradiance is compared with the ASTM standard AM 1.5 global solar spectral irradiance over a wavelength region of 300-2500 nm. The suitability of the solar simulator for laser receiver testing is discussed.

  1. Solar Energy Technician/Installer

    ERIC Educational Resources Information Center

    Moore, Pam

    2007-01-01

    Solar power (also known as solar energy) is solar radiation emitted from the sun. Large panels that absorb the sun's energy as the sun beats down on them gather solar power. The energy in the rays can be used for heat (solar thermal energy) or converted to electricity (photovoltaic energy). Each solar energy project, from conception to…

  2. Ni3Si(Al)/a-SiOx core shell nanoparticles: characterization, shell formation, and stability

    NASA Astrophysics Data System (ADS)

    Pigozzi, G.; Mukherji, D.; Gilles, R.; Barbier, B.; Kostorz, G.

    2006-08-01

    We have used an electrochemical selective phase dissolution method to extract nanoprecipitates of the Ni3Si-type intermetallic phase from two-phase Ni-Si and Ni-Si-Al alloys by dissolving the matrix phase. The extracted nanoparticles are characterized by transmission electron microscopy, energy-dispersive x-ray spectrometry, x-ray powder diffraction, and electron powder diffraction. It is found that the Ni3Si-type nanoparticles have a core-shell structure. The core maintains the size, the shape, and the crystal structure of the precipitates that existed in the bulk alloys, while the shell is an amorphous phase, containing only Si and O (SiOx). The shell forms around the precipitates during the extraction process. After annealing the nanoparticles in nitrogen at 700 °C, the tridymite phase recrystallizes within the shell, which remains partially amorphous. In contrast, on annealing in air at 1000 °C, no changes in the composition or the structure of the nanoparticles occur. It is suggested that the shell forms after dealloying of the matrix phase, where Si atoms, the main constituents of the shell, migrate to the surface of the precipitates.

  3. Plasma-initiated rehydrogenation of amorphous silicon to increase the temperature processing window of silicon heterojunction solar cells

    SciTech Connect

    Shi, Jianwei; Boccard, Mathieu; Holman, Zachary

    The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300°C degrades its ability to passivate silicon wafer surfaces. This limits the temperature of post-passivation processing steps during the fabrication of advanced silicon heterojunction or silicon-based tandem solar cells. We demonstrate that a hydrogen plasma can rehydrogenate intrinsic a-Si:H passivation layers that have been dehydrogenated by annealing. The hydrogen plasma treatment fully restores the effective carrier lifetime to several milliseconds in textured crystalline siliconwafers coated with 8-nm-thick intrinsic a-Si:H layers after annealing at temperatures of up to 450°C. Plasma-initiated rehydrogenation also translates to complete solar cells: A silicon heterojunction solar cell subjected to annealing at 450°C (following intrinsic a-Si:H deposition) had an open-circuit voltage of less than 600 mV, but an identical cell that received hydrogen plasma treatment reached a voltagemore » of over 710 mV and an efficiency of over 19%.« less

  4. Plasma-initiated rehydrogenation of amorphous silicon to increase the temperature processing window of silicon heterojunction solar cells

    DOE PAGES

    Shi, Jianwei; Boccard, Mathieu; Holman, Zachary

    2016-07-19

    The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300°C degrades its ability to passivate silicon wafer surfaces. This limits the temperature of post-passivation processing steps during the fabrication of advanced silicon heterojunction or silicon-based tandem solar cells. We demonstrate that a hydrogen plasma can rehydrogenate intrinsic a-Si:H passivation layers that have been dehydrogenated by annealing. The hydrogen plasma treatment fully restores the effective carrier lifetime to several milliseconds in textured crystalline siliconwafers coated with 8-nm-thick intrinsic a-Si:H layers after annealing at temperatures of up to 450°C. Plasma-initiated rehydrogenation also translates to complete solar cells: A silicon heterojunction solar cell subjected to annealing at 450°C (following intrinsic a-Si:H deposition) had an open-circuit voltage of less than 600 mV, but an identical cell that received hydrogen plasma treatment reached a voltagemore » of over 710 mV and an efficiency of over 19%.« less

  5. Farbrication of diffractive optical elements on a Si chip by an imprint lithography using nonsymmetrical silicon mold

    NASA Astrophysics Data System (ADS)

    Hirai, Yoshihiko; Okano, Masato; Okuno, Takayuki; Toyota, Hiroshi; Yotsuya, Tsutomu; Kikuta, Hisao; Tanaka, Yoshio

    2001-11-01

    Fabrication of a fine diffractive optical element on a Si chip is demonstrated using imprint lithography. A chirped diffraction grating, which has modulated pitched pattern with curved cross section is fabricated by an electron beam lithography, where the exposure dose profile is automatically optimized by computer aided system. Using the resist pattern as an etching mask, anisotropic dry etching is performed to transfer the resist pattern profile to the Si chip. The etched Si substrate is used as a mold in the imprint lithography. The Si mold is pressed to a thin polymer (poly methyl methacrylate) on a Si chip. After releasing the mold, a fine diffractive optical pattern is successfully transferred to the thin polymer. This method is exceedingly useful for fabrication of integrated diffractive optical elements with electric circuits on a Si chip.

  6. Alternatives in solar energy

    NASA Technical Reports Server (NTRS)

    Schueler, D. G.

    1978-01-01

    Although solar energy has the potential of providing a significant source of clean and renewable energy for a variety of applications, it is expected to penetrate the nation's energy economy very slowly. The alternative solar energy technologies which employ direct collection and conversion of solar radiation as briefly described.

  7. Solar dynamic systems

    NASA Technical Reports Server (NTRS)

    Dustin, M. O.

    1985-01-01

    The development of the solar dynamic system is discussed. The benefits of the solar dynamic system over pv systems are enumerated. The history of the solar dynamic development is recounted. The purpose and approach of the advanced development are outlined. Critical concentrator technology and critical heat recover technology are examined.

  8. Experimenting with Solar Energy

    ERIC Educational Resources Information Center

    Roman, Harry T.

    2004-01-01

    Over the past 25 years, the author has had the opportunity to study the subject of solar energy and to get involved with the installation, operation, and testing of solar energy systems. His work has taken him all over the United States and put him in contact with solar experts from around the world. He has also had the good fortune of seeing some…

  9. Cool Earth Solar

    ScienceCinema

    Lamkin, Rob; McIlroy, Andy; Swalwell, Eric; Rajan,

    2018-05-30

    In a public-private partnership that takes full advantage of the Livermore Valley Open Campus (LVOC) for the first time, Sandia National Laboratories and Cool Earth Solar have signed an agreement that could make solar energy more affordable and accessible. In this piece, representatives from Sandia, Cool Earth Solar, and leaders in California government all discuss the unique partnership and its expected impact.

  10. Solar Job Related Training.

    ERIC Educational Resources Information Center

    Lennox Industries, Inc., Dallas, TX.

    This book contains comprehensive instruction in design, installation, and service procedures for typical solar space heat and domestic hot water systems. The book is comprised of five major sections. Solar Systems: Past and Present presents a brief look at how far solar technology has advanced. Included in this section are descriptions of over…

  11. Solar tracking system

    DOEpatents

    Okandan, Murat; Nielson, Gregory N.

    2016-07-12

    Solar tracking systems, as well as methods of using such solar tracking systems, are disclosed. More particularly, embodiments of the solar tracking systems include lateral supports horizontally positioned between uprights to support photovoltaic modules. The lateral supports may be raised and lowered along the uprights or translated to cause the photovoltaic modules to track the moving sun.

  12. Solar Photovoltaic Cells.

    ERIC Educational Resources Information Center

    Mickey, Charles D.

    1981-01-01

    Reviews information on solar radiation as an energy source. Discusses these topics: the key photovoltaic material; the bank theory of solids; conductors, semiconductors, and insulators; impurity semiconductors; solid-state photovoltaic cell operation; limitations on solar cell efficiency; silicon solar cells; cadmium sulfide/copper (I) sulfide…

  13. Inexpensive Photovoltaic Solar Radiometer.

    ERIC Educational Resources Information Center

    Kissner, Fritz

    1981-01-01

    Describes a low-cost instrument using a solar cell as a sensor to measure both instantaneous and integrated value of solar flux. Constructing and calibrating such an instrument constitutes an undergraduate experimental project, affording students an opportunity to examine a variety of aspects associated with solar energy measurements. (Author/SK)

  14. Build a Solar Greenhouse.

    ERIC Educational Resources Information Center

    Conservation and Renewable Energy Inquiry and Referral Service (DOE), Silver Spring, MD.

    Attached solar greenhouses are relatively inexpensive and easy to build; they can provide additional heat to homes all winter as well as fresh vegetables and flowers. This bulletin: (1) describes the characteristics of a solar greenhouse; (2) provides a checklist of five items to consider before building a solar greenhouse; (3) describes the four…

  15. Wyoming | Solar Research | NREL

    Science.gov Websites

    There are currently no statewide community solar policies or programs in Wyoming. State Incentive Programs There are currently no statewide solar financial incentive programs in Wyoming. Utility Incentive Programs Please check with your distribution utility for utility incentive programs for midmarket solar

  16. Indiana | Solar Research | NREL

    Science.gov Websites

    Incentive Programs Indiana exempts solar PV modules, racking, and inverter from state sales and use taxes . The entire solar generating system is exempt from property taxation. Utility Incentive Programs Utility Incentive Limitations Northern Indiana Public Service Company (Solar PV feed-in-tariff) $0.1564

  17. Solar Photovoltaics Technology: The Revolution Begins . . .

    NASA Astrophysics Data System (ADS)

    Kazmerski, Lawrence

    2009-11-01

    The prospects of current and coming solar-photovoltaic (PV) technologies are envisioned, arguing this solar-electricity source is at a tipping point in the complex worldwide energy outlook. The emphasis of this presentation is on R&D advances (cell, materials, and module options), with indications of the limitations and strengths of crystalline (Si and GaAs) and thin-film (a-Si:H, Si, Cu(In,Ga)(Se,S)2, CdTe). The contributions and technological pathways for now and near-term technologies (silicon, III-Vs, and thin films) and status and forecasts for next- generation PV (organics, nanotechnologies, non-conventional junction approaches) are evaluated. Recent advances in concentrators with efficiencies headed toward 50%, new directions for thin films (20% and beyond), and materials/device technology issues are discussed in terms of technology progress. Insights into technical and other investments needed to tip photovoltaics to its next level of contribution as a significant clean-energy partner in the world energy portfolio. The need for R&D accelerating the now and imminent (evolutionary) technologies balanced with work in mid-term (disruptive) approaches is highlighted. Moreover, technology progress and ownership for next generation solar PV mandates a balanced investment in research on longer-term (the revolution needs revolutionary approaches to sustain itself) technologies (quantum dots, multi-multijunctions, intermediate-band concepts, nanotubes, bio-inspired, thermophotonics, solar hydrogen. . . ) having high-risk, but extremely high performance and cost returns for our next generations of energy consumers. Issues relating to manufacturing are explored-especially with the requirements for the next-generation technologies. This presentation provides insights into how this technology has developed-and where the R&D investments should be made and we can expect to be by this mid-21st century.

  18. Choosing An Alloy For Automotive Stirling Engines

    NASA Technical Reports Server (NTRS)

    Stephens, Joseph R.

    1988-01-01

    Report describes study of chemical compositions and microstructures of alloys for automotive Stirling engines. Engines offer advantages of high efficiency, low pollution, low noise, and ability to use variety of fuels. Twenty alloys evaluated for resistance to corrosion permeation by hydrogen, and high temperature. Iron-based alloys considered primary candidates because of low cost. Nickel-based alloys second choice in case suitable iron-based alloy could not be found. Cobalt-based alloy included for comparison but not candidate, because it is expensive strategic material.

  19. Repeatable electrical measurement instrumentation for use in the accelerated stress testing of thin film solar cells

    NASA Technical Reports Server (NTRS)

    Davis, C. W.; Lathrop, J. W.

    1985-01-01

    Attention is given to the construction, calibration, and performance of a repeatable measurement system for use in conjunction with the accelerated stress testing of a-Si:H cells. A filtered diode array is utilized to approximate the spectral response of any type of solar cell in discrete portions of the spectrum. It is noted that in order to achieve the necessary degree of overall repeatability, it is necessary to pay particular attention to methods of contacting and positioning the cells.

  20. Elastic and optical properties of Cu2ZnSn(SexS1 - x)4 alloys: density functional calculations

    NASA Astrophysics Data System (ADS)

    Camps, I.; Coutinho, J.; Mir, M.; da Cunha, A. F.; Rayson, M. J.; Briddon, P. R.

    2012-11-01

    Cu2ZnSn(S1 - xSex)4 (CZT(S, Se)) is emerging as a very credible alternative to CuIn1 - xGaxSe2 (CIGS) as the absorber layer for thin film solar cells. The former compound has the important advantage of using abundant Zn and Sn instead of the expensive In and Ga. A better understanding of the properties of CZT(S, Se) is being sought through experimental and theoretical means. Thus far, however, very little is known about the fundamental properties of the CZT(S, Se) alloys. In this work, theoretical studies on the structural, elastic, electronic and optical properties of CZT(S, Se) alloys through first-principles calculations are reported. We use a density functional code (aimpro), along with the Padé parametrization for the local density approximation to the exchange correlation potential. For the alloying calculations we employed 64 atom supercells (approximately cubic) with a 2 × 2 × 2 k-point sampling set. These supercells possess a total of 32 chalcogen species and the CZTSexS1 - x alloys are described by using the ordered alloy approximation. Accordingly, to create a perfectly diluted alloying host, the species type of the 32 chalcogen sites is selected randomly with uniform probability x and 1 - x for Se and S, respectively. Properties of alloys (structural, elastic, electronic and optical) are obtained by averaging the results of ten supercell configurations generated for each composition. For each configuration, lattice vectors and atomic positions were allowed to relax (although enforcing the tetragonal lattice type) and the Murnaghan equation of state was fitted to the total energy data. The results presented here permit a better understanding of the properties of the CZT(S, Se) alloys which in turn result in the design of more efficient solar cells.

  1. Zero-reabsorption doped-nanocrystal luminescent solar concentrators.

    PubMed

    Erickson, Christian S; Bradshaw, Liam R; McDowall, Stephen; Gilbertson, John D; Gamelin, Daniel R; Patrick, David L

    2014-04-22

    Optical concentration can lower the cost of solar energy conversion by reducing photovoltaic cell area and increasing photovoltaic efficiency. Luminescent solar concentrators offer an attractive approach to combined spectral and spatial concentration of both specular and diffuse light without tracking, but they have been plagued by luminophore self-absorption losses when employed on practical size scales. Here, we introduce doped semiconductor nanocrystals as a new class of phosphors for use in luminescent solar concentrators. In proof-of-concept experiments, visibly transparent, ultraviolet-selective luminescent solar concentrators have been prepared using colloidal Mn(2+)-doped ZnSe nanocrystals that show no luminescence reabsorption. Optical quantum efficiencies of 37% are measured, yielding a maximum projected energy concentration of ∼6× and flux gain for a-Si photovoltaics of 15.6 in the large-area limit, for the first time bounded not by luminophore self-absorption but by the transparency of the waveguide itself. Future directions in the use of colloidal doped nanocrystals as robust, processable spectrum-shifting phosphors for luminescent solar concentration on the large scales required for practical application of this technology are discussed.

  2. Improved conversion efficiency of amorphous Si solar cells using a mesoporous ZnO pattern

    PubMed Central

    2014-01-01

    To provide a front transparent electrode for use in highly efficient hydrogenated amorphous silicon (a-Si:H) thin-film solar cells, porous flat layer and micro-patterns of zinc oxide (ZnO) nanoparticle (NP) layers were prepared through ultraviolet nanoimprint lithography (UV-NIL) and deposited on Al-doped ZnO (AZO) layers. Through this, it was found that a porous micro-pattern of ZnO NPs dispersed in resin can optimize the light-trapping pattern, with the efficiency of solar cells based on patterned or flat mesoporous ZnO layers increased by 27% and 12%, respectively. PMID:25276101

  3. Solar radiation absorbing material

    DOEpatents

    Googin, John M.; Schmitt, Charles R.; Schreyer, James M.; Whitehead, Harlan D.

    1977-01-01

    Solar energy absorbing means in solar collectors are provided by a solar selective carbon surface. A solar selective carbon surface is a microporous carbon surface having pores within the range of 0.2 to 2 micrometers. Such a surface is provided in a microporous carbon article by controlling the pore size. A thermally conductive substrate is provided with a solar selective surface by adhering an array of carbon particles in a suitable binder to the substrate, a majority of said particles having diameters within the range of about 0.2-10 microns.

  4. Solar power station

    SciTech Connect

    Wenzel, J.

    1982-11-30

    Solar power station with semiconductor solar cells for generating electric power is described, wherein the semiconductor solar cells are provided on a member such as a balloon or a kite which carries the solar cells into the air. The function of the balloon or kite can also be fulfilled by a glider or airship. The solar power station can be operated by allowing the system to ascend at sunrise and descend at sunset or when the wind is going to be too strong in order to avoid any demage.

  5. Magnesium-based biodegradable alloys: Degradation, application, and alloying elements

    PubMed Central

    Pogorielov, Maksym; Husak, Eugenia; Solodivnik, Alexandr; Zhdanov, Sergii

    2017-01-01

    In recent years, the paradigm about the metal with improved corrosion resistance for application in surgery and orthopedy was broken. The new class of biodegradable metal emerges as an alternative for biomedical implants. These metals corrode gradually with an appropriate host response and release of corrosion products. And it is absolutely necessary to use essential metals metabolized by hosting organism with local and general nontoxic effect. Magnesium serves this aim best; it plays the essential role in body metabolism and should be completely excreted within a few days after degradation. This review summarizes data from Mg discovery and its first experimental and clinical application of modern concept of Mg alloy development. We focused on biodegradable metal application in general surgery and orthopedic practice and showed the advantages and disadvantages Mg alloys offer. We focused on methods of in vitro and in vivo investigation of degradable Mg alloys and correlation between these methods. Based on the observed data, a better way for new alloy pre-clinical investigation is suggested. This review analyzes possible alloying elements that improve corrosion rate, mechanical properties, and gives the appropriate host response. PMID:28932493

  6. Solar Cycle #24 and the Solar Dynamo

    NASA Technical Reports Server (NTRS)

    Schatten, Kenneth; Pesnell, W. Dean

    2007-01-01

    We focus on two solar aspects related to flight dynamics. These are the solar dynamo and long-term solar activity predictions. The nature of the solar dynamo is central to solar activity predictions, and these predictions are important for orbital planning of satellites in low earth orbit (LEO). The reason is that the solar ultraviolet (UV) and extreme ultraviolet (EUV) spectral irradiances inflate the upper atmospheric layers of the Earth, forming the thermosphere and exosphere through which these satellites orbit. Concerning the dynamo, we discuss some recent novel approaches towards its understanding. For solar predictions we concentrate on a solar precursor method, in which the Sun's polar field plays a major role in forecasting the next cycle s activity based upon the Babcock-Leighton dynamo. With a current low value for the Sun s polar field, this method predicts that solar cycle #24 will be one of the lowest in recent times, with smoothed F10.7 radio flux values peaking near 130 plus or minus 30 (2 sigma), in the 2013 timeframe. One may have to consider solar activity as far back as the early 20th century to find a cycle of comparable magnitude. Concomitant effects of low solar activity upon satellites in LEO will need to be considered, such as enhancements in orbital debris. Support for our prediction of a low solar cycle #24 is borne out by the lack of new cycle sunspots at least through the first half of 2007. Usually at the present epoch in the solar cycle (approx. 7+ years after the last solar maximum), for a normal size following cycle, new cycle sunspots would be seen. The lack of their appearance at this time is only consistent with a low cycle #24. Polar field observations of a weak magnitude are consistent with unusual structures seen in the Sun s corona. Polar coronal holes are the hallmarks of the Sun's open field structures. At present, it appears that the polar coronal holes are relatively weak, and there have been many equatorial coronal holes

  7. Solar Cycle #24 and the Solar Dynamo

    NASA Technical Reports Server (NTRS)

    Pesnell, W. Dean; Schatten, Kenneth

    2007-01-01

    We focus on two solar aspects related to flight dynamics. These are the solar dynamo and long-term solar activity predictions. The nature of the solar dynamo is central to solar activity predictions, and these predictions are important for orbital planning of satellites in low earth orbit (LEO). The reason is that the solar ultraviolet (UV) and extreme ultraviolet (EUV) spectral irradiances inflate the upper atmospheric layers of the Earth, forming the thermosphere and exosphere through which these satellites orbit. Concerning the dynamo, we discuss some recent novel approaches towards its understanding. For solar predictions we concentrate on a solar precursor method, in which the Sun s polar field plays a major role in forecasting the next cycle s activity based upon the Babcock- Leighton dynamo. With a current low value for the Sun s polar field, this method predicts that solar cycle #24 will be one of the lowest in recent times, with smoothed F10.7 radio flux values peaking near 130+ 30 (2 4, in the 2013 timeframe. One may have to consider solar activity as far back as the early 20th century to find a cycle of comparable magnitude. Concomitant effects of low solar activity upon satellites in LEO will need to be considered, such as enhancements in orbital debris. Support for our prediction of a low solar cycle #24 is borne out by the lack of new cycle sunspots at least through the first half of 2007. Usually at the present epoch in the solar cycle (-7+ years after the last solar maximum), for a normal size following cycle, new cycle sunspots would be seen. The lack of their appearance at this time is only consistent with a low cycle #24. Polar field observations of a weak magnitude are consistent with unusual structures seen in the Sun s corona. Polar coronal holes are the hallmarks of the Sun s open field structures. At present, it appears that the polar coronal holes are relatively weak, and there have been many equatorial coronal holes. This appears

  8. Production of intergranular attack of alloy 600, alloy 690, and alloy 800 tubing in tubesheet crevices: Topical report

    SciTech Connect

    Scott, D.B.; Glaves, C.L.,

    1987-07-01

    Three model boilers, manufactured to simulate full-size tube sheet crevices, were tested with various secondary side environments. The first was faulted with organics representative of the decomposition of humic acid. The second was faulted with sodium carbonate and sodium hydroxide, while the third was faulted with sodium sulfate and sodium hydroxide. Each model contained seven tubes, which included Alloy 600 in the mill-annealed (MA) and thermally-treated (TT) conditions and Alloy 690 in the thermally-treated condition. Two models contained Alloy 800 tubes in the mill-annealed condition and one had Alloy 800 in the mill-annealed/cold-worked/glass-bead-peened condition. Two different sizes of tubesheet crevicesmore » were used in all model boilers. In the organics-faulted boiler, tubes of Alloy 600MA, Alloy 690TT and Alloy 800MA experienced no significant intergranular attack (IGA); however, the Alloy 600TT had intergranular attack (IGA) three to four grains deep. The carbonate-caustic faulted boiler experienced throughwall stress corrosion cracking (SCC) in all tubes of Alloy 600 MA and Alloy 800 MA. Eddy current indications were present in Alloy 690TT, Alloy 600TT and Alloy 800 in the mill-annealed/cold worked/glass-bead-peened condition. Metallographic examination of tubes from the third model boiler, faulted with sodium sulfate and caustic, revealed IGA in the mill-annealed Alloy 600 tubes. The IGA was more extensive in an Alloy 600 tube annealed at 1700/sup 0/F than an Alloy 600 tube annealed at 1875/sup 0/F.« less

  9. Solar variability datalogger

    DOE PAGES

    Lave, Matthew; Stein, Joshua; Smith, Ryan

    2016-07-28

    To address the lack of knowledge of local solar variability, we have developed and deployed a low-cost solar variability datalogger (SVD). While most currently used solar irradiance sensors are expensive pyranometers with high accuracy (relevant for annual energy estimates), low-cost sensors display similar precision (relevant for solar variability) as high-cost pyranometers, even if they are not as accurate. In this work, we present evaluation of various low-cost irradiance sensor types, describe the SVD, and present validation and comparison of the SVD collected data. In conclusion, the low cost and ease of use of the SVD will enable a greater understandingmore » of local solar variability, which will reduce developer and utility uncertainty about the impact of solar photovoltaic (PV) installations and thus will encourage greater penetrations of solar energy.« less

  10. Solar energy modulator

    NASA Technical Reports Server (NTRS)

    Hale, R. R. (Inventor); Mcdougal, A. R.

    1984-01-01

    A module is described with a receiver having a solar energy acceptance opening and supported by a mounting ring along the optic axis of a parabolic mirror in coaxial alignment for receiving solar energy from the mirror, and a solar flux modulator plate for varying the quantity of solar energy flux received by the acceptance opening of the module. The modulator plate is characterized by an annular, plate-like body, the internal diameter of which is equal to or slightly greater than the diameter of the solar energy acceptance opening of the receiver. Slave cylinders are connected to the modulator plate for supporting the plate for axial displacement along the axis of the mirror, therby shading the opening with respect to solar energy flux reflected from the surface of the mirror to the solar energy acceptance opening.

  11. Photovoltaic solar cell

    DOEpatents

    Nielson, Gregory N.; Gupta, Vipin P.; Okandan, Murat; Watts, Michael R.

    2015-09-08

    A photovoltaic solar concentrator is disclosed with one or more transverse-junction solar cells (also termed point contact solar cells) and a lens located above each solar cell to concentrate sunlight onto the solar cell to generate electricity. Piezoelectric actuators tilt or translate each lens to track the sun using a feedback-control circuit which senses the electricity generated by one or more of the solar cells. The piezoelectric actuators can be coupled through a displacement-multiplier linkage to provide an increased range of movement of each lens. Each lens in the solar concentrator can be supported on a frame (also termed a tilt plate) having three legs, with the movement of the legs being controlled by the piezoelectric actuators.

  12. Photovoltaic solar concentrator

    DOEpatents

    Nielson, Gregory N.; Gupta, Vipin P.; Okandan, Murat; Watts, Michael R.

    2016-03-15

    A photovoltaic solar concentrator is disclosed with one or more transverse-junction solar cells (also termed point contact solar cells) and a lens located above each solar cell to concentrate sunlight onto the solar cell to generate electricity. Piezoelectric actuators tilt or translate each lens to track the sun using a feedback-control circuit which senses the electricity generated by one or more of the solar cells. The piezoelectric actuators can be coupled through a displacement-multiplier linkage to provide an increased range of movement of each lens. Each lens in the solar concentrator can be supported on a frame (also termed a tilt plate) having three legs, with the movement of the legs being controlled by the piezoelectric actuators.

  13. Photovoltaic solar concentrator

    DOEpatents

    Nielson, Gregory N.; Okandan, Murat; Resnick, Paul J.; Cruz-Campa, Jose Luis

    2012-12-11

    A photovoltaic solar concentrator is disclosed with one or more transverse-junction solar cells (also termed point contact solar cells) and a lens located above each solar cell to concentrate sunlight onto the solar cell to generate electricity. Piezoelectric actuators tilt or translate each lens to track the sun using a feedback-control circuit which senses the electricity generated by one or more of the solar cells. The piezoelectric actuators can be coupled through a displacement-multiplier linkage to provide an increased range of movement of each lens. Each lens in the solar concentrator can be supported on a frame (also termed a tilt plate) having three legs, with the movement of the legs being controlled by the piezoelectric actuators.

  14. Mars Solar Power

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Kerslake, Thomas W.; Jenkins, Phillip P.; Scheiman, David A.

    2004-01-01

    NASA missions to Mars, both robotic and human, rely on solar arrays for the primary power system. Mars presents a number of challenges for solar power system operation, including a dusty atmosphere which modifies the spectrum and intensity of the incident solar illumination as a function of time of day, degradation of the array performance by dust deposition, and low temperature operation. The environmental challenges to Mars solar array operation will be discussed and test results of solar cell technology operating under Mars conditions will be presented, along with modeling of solar cell performance under Mars conditions. The design implications for advanced solar arrays for future Mars missions is discussed, and an example case, a Martian polar rover, are analyzed.

  15. Development of high-performance GaInAsP solar cells for tandem solar cell applications

    NASA Technical Reports Server (NTRS)

    Wanlass, M. W.; Ward, J. S.; Gessert, T. A.; Emery, K. A.; Horner, G. S.

    1990-01-01

    Recent results in the development of high-efficiency, low-bandgap GaInAsP solar cells epitaxially grown and lattice matched on InP substrates are presented. Such cells are intended to be used as optimum bottom cell components in tandem solar cells. Assuming that a GaAs-based top cell is used, computer simulation of the potential bottom cell performance as a function of the cell bandgap and incident spectrum indicates that two particular alloys are desirable: Ga0.47In0.53As (Eg = 0.75 eV) for space applications and Ga0.25In0.75As0.54P0.46 (Eg = 0.95 eV) for terrestrial applications. In each of these materials, solar cells with new record-level efficiencies have been fabricated. The efficiency boost available to tandem configurations from these low-bandgap cells is discussed.

  16. High strength forgeable tantalum base alloy

    NASA Technical Reports Server (NTRS)

    Buckman, R. W., Jr.

    1975-01-01

    Increasing tungsten content of tantalum base alloy to 12-15% level will improve high temperature creep properties of existing tantalum base alloys while retaining their excellent fabrication and welding characteristics.

  17. Alloy hardening and softening in binary molybdenum alloys as related to electron concentration

    NASA Technical Reports Server (NTRS)

    Stephens, J. R.; Witzke, W. R.

    1972-01-01

    An investigation was conducted to determine the effects of alloy additions of hafnium, tantalum, tungsten, rhenium, osmium, iridium, and platinum on hardness of molybdenum. Special emphasis was placed on alloy softening in these binary molybdenum alloys. Results showed that alloy softening was produced by those elements having an excess of s+d electrons compared to molybdenum, while those elements having an equal number or fewer s+d electrons that molybdenum failed to produce alloy softening. Alloy softening and alloy hardening can be correlated with the difference in number of s+d electrons of the solute element and molybdenum.

  18. Multi-junction solar cell device

    DOEpatents

    Friedman, Daniel J.; Geisz, John F.

    2007-12-18

    A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.

  19. Solar Probe thermal shield design and testing

    NASA Technical Reports Server (NTRS)

    Millard, Jerry M.; Miyake, Robert N.; Rainen, Richard A.

    1992-01-01

    This paper discusses the major thermal shield subsystem development activities in support of the Solar Probe study being conducted at JPL. The Solar Probe spacecraft will travel to within 4 solar radii of the sun's center to perform fundamental experiments in space physics. Exposure to 2900 earth suns at perihelion requires the spacecraft to be protected within the shadow envelope of a protective shield. In addition, the mass loss rate off of the shield at elevated temperature must comply with plasma instrument requirements and has become the driver of the shield design. This paper will focus on the analytical design work to size the shield and control the shield mass loss rate for the various spacecraft options under study, the application of carbon-carbon materials for shield components, development and preparation of carbon-carbon samples for materials testing, and a materials testing program for carbon-carbon and tungsten alloys to investigate thermal/optical properties, mass loss (carbon-carbon only), material integrity, and high velocity impact behavior.

  20. MTF measurements with high-resolution a-Si:H imaging arrays

    NASA Astrophysics Data System (ADS)

    Yorkston, John; Antonuk, Larry E.; Seraji, N.; Huang, Weidong; Siewerdsen, Jeffrey H.; El-Mohri, Youcef

    1995-05-01

    Recent advances in a-Si:H fabrication technology have opened the way for the application of flat panel imaging arrays in a number of areas in medical imaging. Their large area (up to approximately 26 X 26 cm), thin profile (< 1 mm) and real time readout capability make them strong candidates for the replacement of more traditional x-ray imaging technologies such as film and image intensifier systems. As a first step towards a device suitable for clinical use we have created a 24.4 X 19.4 cm array with 127 micrometers pitch pixels. This device serves as a testbed for investigating the effects of design changes on array imaging performance. This paper reports on initial measurements of the spatial resolution of this device used in conjunction with an overlaying Lanex Regular screen and 90 kVp x rays. The measured pre-sampled modulation transfer function (p.s. MTF) is found to fall below the predicted value by up to approximately 8%. At least part of this reduction seems to be due to scattering of light photons between the array and the surface of the phosphor screen contacting the array.

  1. Investigation of baseline measurement resolution of a Si plate-based extrinsic Fabry-Perot interferometer

    NASA Astrophysics Data System (ADS)

    Ushakov, Nikolai; Liokumovich, Leonid

    2014-05-01

    Measurement of a wafer thickness is of a great value for fabrication and interrogation of MEMS/MOEMS devices, as well as conventional optical fiber sensors. In the current paper we investigate the abilities of the wavelength-scanning interferometry techniques for registering the baseline of an extrinsic fiber Fabry-Perot interferometer (EFPI) with the cavity formed by the two sides of a silicon plate. In order to enhance the resolution, an improved signal processing algorithm was developed. Various experiments, including contact and non-contact measurement of a silicon wafer thickness were performed, with the achieved resolutions from 10 to 20 pm. This enables one to use the described approach for high-precision measurement of geometric parameters of micro electro (electro-optic) mechanical systems for their characterization, utilization in sensing tasks and fabrication control. An ability of a Si plate-based EFPI interrogated by the developed technique to capture temperature variations of about 4 mK was demonstrated.

  2. Resonant coherent excitation of relativistic Ar 17+ ions channeled in a Si crystal

    NASA Astrophysics Data System (ADS)

    Azuma, T.; Ito, T.; Yamazaki, Y.; Komaki, K.; Sano, M.; Torikoshi, M.; Kitagawa, A.; Takada, E.; Murakami, T.

    1998-02-01

    We observed resonant coherent excitation (RCE) of 1s electron to n=2 states in Ar 17+ through measurements of the survived fraction of 390 MeV/u hydrogen-like Ar 17+ channeled in a Si crystal. We adopted a totally depleted Si surface barrier detector as a target crystal as well as a probe of the energy deposition. The charge state of emerged ions was measured by a combination of a charge separation magnet and a 2D-position sensitive detector. We observed the RCE for planar channeled ions by tilting the target Si crystal from the direction of [1 1 0] axis in the (2 2¯ 0) , (0 0 4) , and (1 1¯ 1) planes. Prominent resonances at tilt angles under the resonance condition were observed. Moreover, each resonance profile is split into several lines due to the l· s interaction and the Stark effect originating in the static crystal field. The energy deposition in the crystal gives the information of the amplitude of the ion trajectory. The resonance peak position, intensity and width in the survived fraction of Ar 17+ reflect the position dependent strength of the crystal field, the RCE and the electron loss probabilities. They are in good accord with our calculation of the transition energy and probability.

  3. A SiC LDMOS with electric field modulation by a step compound drift region

    NASA Astrophysics Data System (ADS)

    Bao, Meng-tian; Wang, Ying; Yu, Cheng-hao; Cao, Fei

    2018-07-01

    In this paper, we propose a SiC LDMOS structure with a step compound drift region (SC-LDMOS). The proposed device has a compound drift region which consists of an n-type top layer, a step p-type middle layer and an n-type bottom layer. The step p-type middle layer can introduce two new electric field peaks and uniform the distribution of the electric field in the n-type top layer, which can modulate the surface electric field and improve the breakdown voltage of the proposed structure. In addition, the n-type bottom layer is applied under the heavy doping p-type middle layer,which contributes to realize the charge balance. Furthermore, it can also increase the doping concentration of the n-type top layer, which can decrease the on resistance of the proposed device. As a simulated result, the proposed device obtain a high BV of 976 V and a low Rsp,on of 7.74 mΩ·cm2. Compared with the conventional single REUSRF LDMOS and triple RESURF LDMOS, BV of proposed device is enhanced by 42.5% and 14.7%, respectively and Rsp,on is reduced by 37.3% and 30.9%, respectively. Meanwhile, the switching delays of the proposed device are significantly shorter than the conventional triple RESURF LDMOS.

  4. State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot

    DOE PAGES

    Ward, Daniel R.; Kim, Dohun; Savage, Donald E.; ...

    2016-10-18

    Universal quantum computation requires high-fidelity single-qubit rotations and controlled two-qubit gates. Along with high-fidelity single-qubit gates, strong efforts have been made in developing robust two-qubit logic gates in electrically gated quantum dot systems to realise a compact and nanofabrication-compatible architecture. Here we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between a pair of doublemore » quantum dots by measuring the detuning energy shift (≈75 μeV) of one double dot depending on the excess charge configuration of the other double dot. Finally, we further demonstrate that the strong capacitive coupling allows fast, state-conditional Landau–Zener–Stückelberg oscillations with a conditional π phase flip time of about 80 ps, showing a promising pathway towards multi-qubit entanglement and control in semiconductor quantum dots.« less

  5. Trapping time of excitons in Si nanocrystals embedded in a SiO2 matrix

    NASA Astrophysics Data System (ADS)

    de Jong, E. M. L. D.; de Boer, W. D. A. M.; Yassievich, I. N.; Gregorkiewicz, T.

    2017-05-01

    Silicon (Si) nanocrystals (NCs) are of great interest for many applications, ranging from photovoltaics to optoelectonics. The photoluminescence quantum yield of Si NCs dispersed in SiO2 is limited, suggesting the existence of very efficient processes of nonradiative recombination, among which the formation of a self-trapped exciton state on the surface of the NC. In order to improve the external quantum efficiency of these systems, the carrier relaxation and recombination need to be understood more thoroughly. For that purpose, we perform transient-induced absorption spectroscopy on Si NCs embedded in a SiO2 matrix over a broad probe range for NCs of average sizes from 2.5 to 5.5 nm. The self-trapping of free excitons on surface-related states is experimentally and theoretically discussed and found to be dependent on the NC size. These results offer more insight into the self-trapped exciton state and are important to increase the optical performance of Si NCs.

  6. Fluctuation Reduction in a Si Micromechanical Resonator Tuned to Nonlinear Internal Resonance

    NASA Astrophysics Data System (ADS)

    Strachan, B. Scott; Czaplewski, David; Chen, Changyao; Dykman, Mark; Lopez, Daniel; Shaw, Steven

    2015-03-01

    We describe experimental and theoretical results on an unusual behavior of fluctuations when the system exhibits internal resonance. We study the fundamental flexural mode (FFM) of a Si microbeam. The FFM is electrically actuated and detected. It is resonantly nonlinearly coupled to another mode, which is not directly accessible and has a frequency nearly three times the FFM frequency. Both the FFM and the passive mode have long lifetimes. We find that the passive mode can be a ``sink'' for fluctuations of the FFM. This explains the recently observed dramatic decrease of these fluctuations at nonlinear resonance. The re-distribution of the vibration amplitudes and the fluctuations is reminiscent of what happens at level anti-crossing in quantum mechanics. However, here it is different because of interplay of the dependence of the vibration frequency of the FFM on its amplitude due to internal nonlinearity and the nonlinear resonance with the passive mode. We study both the response of the system to external resonant driving and also the behavior of the system in the presence of a feedback loop. The experimental and theoretical results are in good agreement.

  7. Identification of thyroid tumor cell vulnerabilities through a siRNA-based functional screening.

    PubMed

    Anania, Maria; Gasparri, Fabio; Cetti, Elena; Fraietta, Ivan; Todoerti, Katia; Miranda, Claudia; Mazzoni, Mara; Re, Claudia; Colombo, Riccardo; Ukmar, Giorgio; Camisasca, Stefano; Pagliardini, Sonia; Pierotti, Marco; Neri, Antonino; Galvani, Arturo; Greco, Angela

    2015-10-27

    The incidence of thyroid carcinoma is rapidly increasing. Although generally associated with good prognosis, a fraction of thyroid tumors are not cured by standard therapy and progress to aggressive forms for which no effective treatments are currently available. In order to identify novel therapeutic targets for thyroid carcinoma, we focused on the discovery of genes essential for sustaining the oncogenic phenotype of thyroid tumor cells, but not required to the same degree for the viability of normal cells (non-oncogene addiction paradigm). We screened a siRNA oligonucleotide library targeting the human druggable genome in thyroid cancer BCPAP cell line in comparison with immortalized normal human thyrocytes (Nthy-ori 3-1). We identified a panel of hit genes whose silencing interferes with the growth of tumor cells, while sparing that of normal ones. Further analysis of three selected hit genes, namely Cyclin D1, MASTL and COPZ1, showed that they represent common vulnerabilities for thyroid tumor cells, as their inhibition reduced the viability of several thyroid tumor cell lines, regardless the histotype or oncogenic lesion. This work identified non-oncogenes essential for sustaining the phenotype of thyroid tumor cells, but not of normal cells, thus suggesting that they might represent promising targets for new therapeutic strategies.

  8. State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot

    NASA Astrophysics Data System (ADS)

    Ward, Daniel R.; Kim, Dohun; Savage, Donald E.; Lagally, Max G.; Foote, Ryan H.; Friesen, Mark; Coppersmith, Susan N.; Eriksson, Mark A.

    2016-10-01

    Universal quantum computation requires high-fidelity single-qubit rotations and controlled two-qubit gates. Along with high-fidelity single-qubit gates, strong efforts have been made in developing robust two-qubit logic gates in electrically gated quantum dot systems to realise a compact and nanofabrication-compatible architecture. Here we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between a pair of double quantum dots by measuring the detuning energy shift (≈75 μeV) of one double dot depending on the excess charge configuration of the other double dot. We further demonstrate that the strong capacitive coupling allows fast, state-conditional Landau-Zener-Stückelberg oscillations with a conditional π phase flip time of about 80 ps, showing a promising pathway towards multi-qubit entanglement and control in semiconductor quantum dots.

  9. A SiC MOSFET Based Inverter for Wireless Power Transfer Applications

    SciTech Connect

    Onar, Omer C; Chinthavali, Madhu Sudhan; Campbell, Steven L

    2014-01-01

    In a wireless power transfer (WPT) system, efficiency of the power conversion stages is crucial so that the WPT technology can compete with the conventional conductive charging systems. Since there are 5 or 6 power conversion stages, each stage needs to be as efficient as possible. SiC inverters are crucial in this case; they can handle high frequency operation and they can operate at relatively higher temperatures resulting in reduces cost and size for the cooling components. This study presents the detailed power module design, development, and fabrication of a SiC inverter. The proposed inverter has been tested at threemore » center frequencies that are considered for the WPT standardization. Performance of the inverter at the same target power transfer level is analyzed along with the other system components. In addition, another SiC inverter has been built in authors laboratory by using the ORNL designed and developed SiC modules. It is shown that the inverter with ORNL packaged SiC modules performs simular to that of the inverter having commercially available SiC modules.« less

  10. A stable silicon(0) compound with a Si=Si double bond.

    PubMed

    Wang, Yuzhong; Xie, Yaoming; Wei, Pingrong; King, R Bruce; Schaefer, Henry F; von R Schleyer, Paul; Robinson, Gregory H

    2008-08-22

    Dative, or nonoxidative, ligand coordination is common in transition metal complexes; however, this bonding motif is rare in compounds of main group elements in the formal oxidation state of zero. Here, we report that the potassium graphite reduction of the neutral hypervalent silicon-carbene complex L:SiCl4 {where L: is:C[N(2,6-Pri2-C6H3)CH]2 and Pri is isopropyl} produces L:(Cl)Si-Si(Cl):L, a carbene-stabilized bis-silylene, and L:Si=Si:L, a carbene-stabilized diatomic silicon molecule with the Si atoms in the formal oxidation state of zero. The Si-Si bond distance of 2.2294 +/- 0.0011 (standard deviation) angstroms in L:Si=Si:L is consistent with a Si=Si double bond. Complementary computational studies confirm the nature of the bonding in L:(Cl)Si-Si(Cl):L and L:Si=Si:L.

  11. Amplitude and timing properties of a Geiger discharge in a SiPM cell

    NASA Astrophysics Data System (ADS)

    Popova, E.; Buzhan, P.; Pleshko, A.; Vinogradov, S.; Stifutkin, A.; Ilyin, A.; Besson, D.; Mirzoyan, R.

    2015-07-01

    The amplitude and timing properties of a Geiger discharge in a stand-alone SiPM cell have been investigated in detail. Use of a single stand-alone SiPM cell allows us to perform measurements with better accuracy than the multicell structure of conventional SiPMs. We have studied the dependence of the output charge and amplitude from an SiPM cell illuminated by focused light vs the number of primary photoelectrons. We propose a SPICE model which explains the amplitude over saturation (when the SiPM's amplitude is greater than the sum over all cells) characteristics of SiPM signals for more than one initial photoelectrons. The time resolutions of a SiPM cell have been measured for the case of single (SPTR) and multiphoton light pulses. The Full Width Half Max (FWHM) for SPTR has been found to be at the level of 30 ps for focused and 40 ps for unfocused light (100 μm cell size).

  12. Simulation of redistributive and erosive effects in a-Si under Ar+ irradiation

    NASA Astrophysics Data System (ADS)

    Lopez-Cazalilla, A.; Ilinov, A.; Bukonte, L.; Nordlund, K.; Djurabekova, F.; Norris, S.; Perkinson, J. C.

    2018-01-01

    Ion beams are frequently used in industry for composition control of semiconducting materials as well as for surface processing and thin films deposition. Under certain conditions, low- and medium energy ions at high fluences can produce nanoripples and quantum dots on the irradiated surfaces. In the present work, we focus our attention on the study of irradiation of amorphous silicon (a-Si) target with 250 eV and 1 keV Ar+ ions under different angles, taking into special consideration angles close to the grazing incidence. We use the molecular dynamics (MD) method to investigate how much the cumulative displacement of atoms due to the simulated ion bombardment contribute to the patterning effect. The MD results are subsequently analysed using a numerical module Pycraters that allows the prediction of the rippling effect. Ripple wavelengths estimated with Pycraters are then compared with the experimental observations, as well as with the results obtained by using the binary collisions approximation (BCA) method. The wavelength estimation based on the MD results demonstrates a better agreement with the experimental values. In the framework of the utilized analytical model, it can be mainly attributed to the fact that the BCA ignores low energy atomic interactions, which, however, provide an important contribution to the displacement of atoms following an ion impact.

  13. State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot

    SciTech Connect

    Ward, Daniel R.; Kim, Dohun; Savage, Donald E.

    Universal quantum computation requires high-fidelity single-qubit rotations and controlled two-qubit gates. Along with high-fidelity single-qubit gates, strong efforts have been made in developing robust two-qubit logic gates in electrically gated quantum dot systems to realise a compact and nanofabrication-compatible architecture. Here we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between a pair of doublemore » quantum dots by measuring the detuning energy shift (≈75 μeV) of one double dot depending on the excess charge configuration of the other double dot. Finally, we further demonstrate that the strong capacitive coupling allows fast, state-conditional Landau–Zener–Stückelberg oscillations with a conditional π phase flip time of about 80 ps, showing a promising pathway towards multi-qubit entanglement and control in semiconductor quantum dots.« less

  14. Quasicrystal-reinforced Mg alloys.

    PubMed

    Kyun Kim, Young; Tae Kim, Won; Hyang Kim, Do

    2014-04-01

    The formation of the icosahedral phase (I-phase) as a secondary solidification phase in Mg-Zn-Y and Mg-Zn-Al base systems provides useful advantages in designing high performance wrought magnesium alloys. The strengthening in two-phase composites (I-phase + α -Mg) can be explained by dispersion hardening due to the presence of I-phase particles and by the strong bonding property at the I-phase/matrix interface. The presence of an additional secondary solidification phase can further enhance formability and mechanical properties. In Mg-Zn-Y alloys, the co-presence of I and Ca 2 Mg 6 Zn 3 phases by addition of Ca can significantly enhance formability, while in Mg-Zn-Al alloys, the co-presence of the I-phase and Mg 2 Sn phase leads to the enhancement of mechanical properties. Dynamic and static recrystallization are significantly accelerated by addition of Ca in Mg-Zn-Y alloy, resulting in much smaller grain size and more random texture. The high strength of Mg-Zn-Al-Sn alloys is attributed to the presence of finely distributed Mg 2 Sn and I-phase particles embedded in the α -Mg matrix.

  15. Quasicrystal-reinforced Mg alloys

    PubMed Central

    Kyun Kim, Young; Tae Kim, Won; Hyang Kim, Do

    2014-01-01

    The formation of the icosahedral phase (I-phase) as a secondary solidification phase in Mg–Zn–Y and Mg–Zn–Al base systems provides useful advantages in designing high performance wrought magnesium alloys. The strengthening in two-phase composites (I-phase + α-Mg) can be explained by dispersion hardening due to the presence of I-phase particles and by the strong bonding property at the I-phase/matrix interface. The presence of an additional secondary solidification phase can further enhance formability and mechanical properties. In Mg–Zn–Y alloys, the co-presence of I and Ca2Mg6Zn3 phases by addition of Ca can significantly enhance formability, while in Mg–Zn–Al alloys, the co-presence of the I-phase and Mg2Sn phase leads to the enhancement of mechanical properties. Dynamic and static recrystallization are significantly accelerated by addition of Ca in Mg–Zn–Y alloy, resulting in much smaller grain size and more random texture. The high strength of Mg–Zn–Al–Sn alloys is attributed to the presence of finely distributed Mg2Sn and I-phase particles embedded in the α-Mg matrix. PMID:27877660

  16. Superconducting compounds and alloys research

    NASA Technical Reports Server (NTRS)

    Otto, G.

    1975-01-01

    Resistivity measurements as a function of temperature were performed on alloys of the binary material system In sub(1-x) Bi sub x for x varying between 0 and 1. It was found that for all single-phase alloys (the pure elements, alpha-In, and the three intermetallic compounds) at temperatures sufficiently above the Debye-temperature, the resistivity p can be expressed as p = a sub o T(n), where a sub o and n are composition-dependent constants. The same exponential relationship can also be applied for the sub-system In-In2Bi, when the two phases are in compositional equilibrium. Superconductivity measurements on single and two-phase alloys can be explained with respect to the phase diagram. There occur three superconducting phases (alpha-In, In2Bi, and In5Bi3) with different transition temperatures in the alloying system. The magnitude of the transition temperatures for the various intermetallic phases of In-Bi is such that the disappearance or occurrence of a phase in two component alloys can be demonstrated easily by means of superconductivity measurements.

  17. Two-dimensional high efficiency thin-film silicon solar cells with a lateral light trapping architecture.

    PubMed

    Fang, Jia; Liu, Bofei; Zhao, Ying; Zhang, Xiaodan

    2014-08-22

    Introducing light trapping structures into thin-film solar cells has the potential to enhance their solar energy harvesting as well as the performance of the cells; however, current strategies have been focused mainly on harvesting photons without considering the light re-escaping from cells in two-dimensional scales. The lateral out-coupled solar energy loss from the marginal areas of cells has reduced the electrical yield indeed. We therefore herein propose a lateral light trapping structure (LLTS) as a means of improving the light-harvesting capacity and performance of cells, achieving a 13.07% initial efficiency and greatly improved current output of a-Si:H single-junction solar cell based on this architecture. Given the unique transparency characteristics of thin-film solar cells, this proposed architecture has great potential for integration into the windows of buildings, microelectronics and other applications requiring transparent components.

  18. Effect of heat treatments on machinability of gold alloy with age-hardenability at intraoral temperature.

    PubMed

    Watanabe, I; Baba, N; Watanabe, E; Atsuta, M; Okabe, T

    2004-01-01

    This study investigated the effect of heat treatment on the machinability of heat-treated cast gold alloy with age-hardenability at intraoral temperature using a handpiece engine with SiC wheels and an air-turbine handpiece with carbide burs and diamond points. Cast gold alloy specimens underwent various heat treatments [As-cast (AC); Solution treatment (ST); High-temperature aging (HA), Intraoral aging (IA)] before machinability testing. The machinability test was conducted at a constant machining force of 0.784N. The three circumferential speeds used for the handpiece engine were 500, 1,000 and 1,500 m/min. The machinability index (M-index) was determined as the amount of metal removed by machining (volume loss, mm(3)). The results were analyzed by ANOVA and Scheffé's test. When an air-turbine handpiece was used, there was no difference in the M-index of the gold alloy among the heat treatments. The air-turbine carbide burs showed significantly (p<0.05) higher M-indexes than the diamond points after any heat treatments. With the SiC wheels, increasing the circumferential speed increased the M-index values for each heat treatment. The specimens heat-treated with AC, HA and IA had similar M-indexes at the lower speeds (500 and 1,000 m/min). The ST specimens exhibited the lowest M-index at the lower speeds. However, at the highest speed (1,500 m/min), there were no significant differences in the M-indexes among the heat treatments except for HA, which showed the highest M-index. There was no effect of heat treatment on the machinability of the gold alloy using the air-turbine handpiece. The heat treatments had a small effect on the M-index of the gold alloy machined with a SiC wheel for a handpiece engine.

  19. Calculation of optical band gaps of a-Si:H thin films by ellipsometry and UV-Vis spectrophotometry

    NASA Astrophysics Data System (ADS)

    Qiu, Yijiao; Li, Wei; Wu, Maoyang; Fu, Junwei; Jiang, Yadong

    2010-10-01

    Hydrogenated amorphous silicon (a-Si:H) thin films doped with Phosphorus (P) and Nitrogen (N) were deposited by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). The optical band gaps of the thin films obtained through either changing the gas pressure (P-doped only) or adulterating nitrogen concentration (with fixed P content) were investigated by means of Ellipsometric and Ultraviolet-Visible (UV-Vis) spectroscopy, respectively. Tauc formula was used in calculating the optical band gaps of the thin films in both methods. The results show that Ellipsometry and UV-Vis spectrophotometry can be applied in the research of the optical properties of a-Si:H thin films experimentally. Both methods reflect the variation law of the optical band gaps caused by CVD process parameters, i.e., the optical band gap of the a-Si:H thin films is increased with the rise of the gas pressure or the nitrogen concentration respectively. The difference in optical band gaps of the doped a-Si:H thin films calculated by Ellipsometry or UV-Vis spectrophotometry are not so great that they both can be used to measure the optical band gaps of the thin films in practical applications.

  20. HEAT TREATED U-Nb ALLOYS

    DOEpatents

    McGeary, R.K.; Justusson, W.M.

    1959-11-24

    A fuel element for a nuclear reactor is described comprising an alloy containing uranium and from 7 to 20 wt.% niobium, the alloy being substantially in the gamma phase and having been produced by working an ingot of the alloy into the desired shape, homogenizing it by annealing it at a temperature in the gamma phase field, and quenching it to retain the gamma phase structure of the alloy.