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Sample records for a-si alloy solar

  1. Modeling of a-Si:H alloy solar cells on textured substrates

    SciTech Connect

    Zeman, M.; Berg, J.H. van den; Vosteen, L.L.A.; Willemen, J.A.; Metselaar, J.W.; Schropp, R.E.I.

    1997-07-01

    Computer modeling is used as a tool for determining current matching in hydrogenated amorphous silicon (a-Si:H) alloy tandem cells on textured substrates. The increasing complexity of a-Si:H based solar cells requires continuous extending and testing of the computer models which are used for their simulation. To take light scattering at the textured interfaces of the cell into account the authors developed a multi-rough-interface optical model GENPRO2 which was used for calculating the absorption profiles in the solar cells. The results of a sensitivity study of the parameters of this optical model such as the scattering coefficients of the reflected and transmitted light and the dependence of scattered light on the in-going and out-going angle are presented. In order to simulate multi-junction solar cell as a complete device they implemented a novel model for tunnel/recombination junction (TRJ), which combines the trap assisted tunneling and enhanced carrier transport in the high field region of the TRJ. The current matching conditions were determined both for a-Si:H and a-SiGe:H bottom cells, while the top cell was an a-Si:H cell. They investigated the influence of light scattering at the textured interfaces and of the thickness of the intrinsic layer of the bottom cell on the optimal ratio (i2/i1) between the thicknesses of the bottom (i2) and top (i1) intrinsic layers in the current-matched cell. The results show that increasing amount of scattering at the textured interfaces leads to higher efficiencies and lower ratio (i2/i1) in the current-matched cell. The use of a-SiGe:H material in the bottom cell leads to higher efficiency and 3 to 4 times lower i2/i1 ratio than in case of a-Si:H/a-Si:H cells.

  2. a-Si:H solar cells: SiH(2)Cl(2) as a source gas and a-SiGe:H alloys

    NASA Astrophysics Data System (ADS)

    Payne, Adam More

    This thesis gives an overview of the reasons why solar cells are a necessity in this world of carbon constrained energy use. The most important factors upon which to work to improve the competitiveness of photovoltaic generated electricity with conventional, fossil fuel based generation are the cost of the solar cell and the cell conversion efficiency. The two main technical thrusts of this thesis--DCS as a source gas and a-SiGe:H alloys--attacked two aspects of these problems. a-SiGe:H is used in multijunction cells to achieve higher efficiencies and DCS can be used to increase the deposition rate of a-Si:H thus decreasing the time it takes to make a solar cell. We review the various experimental methods used to investigate the optical and electronic properties of a-Si:H thin films as well as the methods used to measure solar cell efficiency and determine the effectiveness of the various portions of a solar cell. Using DCS as a source gas helped us increase the deposition rate by factor of 5 while maintaining the film quality; however chlorinated intrinsic films had higher defect densities and lower photoconductivity than standard a-Si:H films. Use of DCS to deposit i-layers of a solar cell led us to the discovery that Cl enhances the doping efficiency of B in a-Si:H. The enhanced doping of a-SiC:H as the p-layer of a solar cell increased the cell's efficiency from 7.1% to 7.8%. A-SiGe:H alloys were investigated over a range of Tauc gaps from 1.7 eV down to 1.0 eV. The optical and electronic properties of these films were investigated as well as their incorporation in solar cells. Different bandgap graded structures were used in the i-layer of a solar cell with the conclusion that the bathtub shaped i-layer yields the highest stabilized efficiency. An attempt was made to fabricate solar cells using cathode-deposited a-SiGe:H alloys as the i-layer in collaboration with Harvard University. The cells fabricated could neither prove nor disprove the effectiveness of

  3. Light-induced degradation in a-Si alloy solar cells at intense illumination

    NASA Astrophysics Data System (ADS)

    Banerjee, A.; Guha, S.; Pawlikiewicz, A.; Wolf, D.; Yang, J.

    1991-08-01

    Light-induced degradation has been investigated in a-Si alloy p-i-n solar cell structures as a function of cell deposition temperature and light intensity. Cells are deposited at temperatures ranging between 200°C to 300°C; degradation has been carried out at intensities up to 50 times AM1.5 illumination at 35°C. The cell charcteristics have been measured under AM1.5, blue and red illuminations. The degradation is found to have a power law dependence on the product of square of generation rate and light-soaking time. Most cells show saturation in degradation under 50 times AM1.5 illumination beyond 1000 sec, which is equivalent to approximately 800 hours under AM1.5 intensity. However, somes cells showed continued degradation at the high intensity up to 6×104 sec without any saturation; the cell properties could be restored to their original values after annealing. Computer simulation studies have been carried out to analyze the results on the basis of existing theories.

  4. Development of high, stable-efficiency triple-junction a-Si alloy solar cells. Final technical report

    SciTech Connect

    Deng, X.; Jones, S.J.; Liu, T.; Izu, M.

    1998-04-01

    This report summarizes Energy Conversion Devices, Inc.`s (ECD) research under this program. ECD researchers explored the deposition of a-Si at high rates using very-high-frequency plasma MHz, and compared these VHF i-layers with radio-frequency (RF) plasma-deposited i-layers. ECD conducted comprehensive research to develop a {mu}c-Si p{sup +} layer using VHF deposition process with the objectives of establishing a wider process window for the deposition of high-quality p{sup +} materials and further enhancing their performance of a-Si solar cells by improving its p-layers. ECD optimized the deposition of the intrinsic a-Si layer and the boron-doped {mu}c-Si p{sup +} layer to improve the V{sub oc}. Researchers deposited wide-bandgap a-Si films using high hydrogen dilution; investigated the deposition of the ZnO layer (for use in back-reflector) using a sputter deposition process involving metal Zn targets; and obtained a baseline fabrication for single-junction a-Si n-i-p devices with 10.6% initial efficiency and a baseline fabrication for triple-junction a-Si devices with 11.2% initial efficiency. ECD researchers also optimized the deposition parameters for a-SiGe with high Ge content; designed a novel structure for the p-n tunnel junction (recombination layer) in a multiple-junction solar cell; and demonstrated, in n-i-p solar cells, the improved stability of a-Si:H:F materials when deposited using a new fluorine precursor. Researchers investigated the use of c-Si(n{sup +})/a-Si alloy/Pd Schottky barrier device as a tool for the effective evaluation of photovoltaic performance on a-Si alloy materials. Through alterations in the deposition conditions and system hardware, researchers improved their understanding for the deposition of uniform and high-quality a-Si and a-SiGe films over large areas. ECD researchers also performed extensive research to optimize the deposition process of the newly constructed 5-MW back-reflector deposition machine.

  5. Development of high stable-efficiency, triple-junction a-Si alloy solar cells. Annual subcontract report, July 18, 1994--July 17, 1995

    SciTech Connect

    Deng, X.

    1996-02-01

    This report describes work performed by Energy Conversion Devices, Inc. (ECD) under a 3-year, cost-shared amorphous silicon (a-Si) research program to develop advanced technologies and to demonstrate stable 14%-efficient, triple-junction a-Si alloy solar cells. The technologies developed under the program will then be incorporated into ECD`s continuous roll-to-roll deposition process to further enhance ECD`s photovoltaic manufacturing technology. In ECD`s solar cell design, triple-junction a-Si alloy solar cells are deposited onto stainless-steel substrates coated with Ag/ZnO back-reflector layers. This type of cell design enabled ECD to use a continuous roll- to-roll deposition process to manufacture a-Si PV materials in high volume at low cost. Using this cell design, ECD previously achieved 13.7% initial solar cell efficiency using the following features: (1) a triple-junction, two-band-gap, spectrum-splitting solar cell design; (2) a microcrystalline silicon p-layer; (3) a band-gap-profiled a- SiGe alloy as the bottom cell i-layer; (4) a high-performance AgZnO back-reflector; and (5) a high-performance tunnel junction between component cells. ECD also applied the technology into its 2-MW/yr a- Si production line and achieved the manufacturing of 4-ft{sup 2} PV modules with 8% stable efficiency. During this program, ECD is also further advancing its existing PV technology toward the goal of 14% stable solar cells by performing the following four tasks: (1) improving the stability of the intrinsic a-Si alloy materials; (2) improving the quality of low-band-gap a-SiGe alloy; (3) improving p{sup +} window layers, and (4) developing high stable-efficiency triple-junction a-Si alloy solar cells.

  6. Study of gap states in a-Si:H alloys by measurements of photoconductivity and spectral response of MIS solar cells

    SciTech Connect

    Vanier, P.E.; Delahoy, A.E.; Griffith, R.W.

    1981-01-01

    A picture of the density of gap states n(E) in glow discharge a-Si:H is constructed using four different kinds of transport measurement on a large number of samples. The minimum in n(E) lies 0.4 eV below E/sub c/, rather than in the middle of the gap. A distribution of fast recombination centers lies at mid-gap, and two sets of hole traps lie between mid-gap and the valence band. Modifications in n(E) have been studied by the effects of selected impurities on the conversion efficiency and spectral response of MIS and p-i-n solar cells.

  7. Investigation of the radiation resistance of triple-junction a-Si:H alloy solar cells irradiated with 1.00 MeV protons

    NASA Technical Reports Server (NTRS)

    Lord, Kenneth R., II; Walters, Michael R.; Woodyard, James R.

    1993-01-01

    The effect of 1.00 MeV proton irradiation on hydrogenated amorphous silicon alloy triple-junction solar cells is reported for the first time. The cells were designed for radiation resistance studies and included 0.35 cm(sup 2) active areas on 1.0 by 2.0 cm(sup 2) glass superstrates. Three cells were irradiated through the bottom contact at each of six fluences between 5.10E12 and 1.46E15 cm(sup -2). The effect of the irradiations was determined with light current-voltage measurements. Proton irradiation degraded the cell power densities from 8.0 to 98 percent for the fluences investigated. Annealing irradiated cells at 200 C for two hours restored the power densities to better than 90 percent. The cells exhibited radiation resistances which are superior to cells reported in the literature for fluences less than 1E14 cm(sup -2).

  8. High performance a-Si solar cells and new fabrication methods for a-Si solar cells

    NASA Astrophysics Data System (ADS)

    Nakano, S.; Kuwano, Y.; Ohnishi, M.

    1986-12-01

    The super chamber, a separated UHV reaction-chamber system has been developed. A conversion efficiency of 11.7% was obtained for an a-Si solar cell using a high-quality i-layer deposited by the super chamber, and a p-layer fabricated by a photo-CVD method. As a new material, amorphous superlattice-structure films were fabricated by the photo-CVD method for the first time. Superlattice structure p-layer a-Si solar cells were fabricated, and a conversion efficiency of 10.5% was obtained. For the fabrication of integrated type a-Si solar cell modules, a laser pattering method was investigated. A thermal analysis of the multilayer structure was done. It was confirmed that selective scribing for a-Si, TCO and metal film is possible by controlling the laser power density. Recently developed a-Si solar power generation systems and a-Si solar cell roofing tiles are also described.

  9. Improvement of parameters in a-Si(p)/c-Si(n)/a-Si(n) solar cells

    NASA Astrophysics Data System (ADS)

    Moustafa Bouzaki, Mohammed; Aillerie, Michel; Ould Saad Hamady, Sidi; Chadel, Meriem; Benyoucef, Boumediene

    2016-10-01

    We analyzed and discussed the influence of thickness and doping concentration of the different layers in a-Si(p)/c-Si(n)/a-Si(n) photovoltaic (PV) cells with the aim of increasing its efficiency while decreasing its global cost. Compared to the efficiency of a standard marketed PV cell, elaborated with a ZnO transparent conductive oxide (TCO) layer but without Back Surface Field (BSF) layer, an optimization of the thickness and dopant concentration of both the emitter a-Si(p) and absorber c-Si(n) layers will gain about 3% in the global efficiency of the cell. The results also reveal that with introduction of the third layer, i.e. the BSF layer, the efficiency always achieves values above 20% and all other parameters of the cell, such as the open-circuit voltage, the short-circuit current and the fill-factor, are strongly affected by the thickness and dopant concentration of the layers. The values of all parameters are given and discussed in the paper. Thereby, the simulation results give for an optimized a-Si(p)/c-Si(n)/a-Si(n) PV cells the possibility to decrease the thickness of the absorber layer down to 50 μm which is lower than in the state-of-the-art. This structure of the cell achieves suitable properties for high efficiency, cost-effectiveness and reliable heterojunction (HJ) solar cell applications.

  10. Plasmonic nano-antenna a-Si:H solar cell.

    PubMed

    Di Vece, Marcel; Kuang, Yinghuan; van Duren, Stephan N F; Charry, Jamie M; van Dijk, Lourens; Schropp, Ruud E I

    2012-12-03

    In this work the effects of plasmonics, nano-focusing, and orthogonalization of carrier and photon pathways are simultaneously explored by measuring the photocurrents in an elongated nano-scale solar cell with a silver nanoneedle inside. The silver nanoneedles formed the support of a conformally grown hydrogenated amorphous silicon (a-Si:H) n-i-p junction around it. A spherical morphology of the solar cell functions as a nano-lens, focusing incoming light directly on the silver nanoneedle. We found that plasmonics, geometric optics, and Fresnel reflections affect the nanostructured solar cell performance, depending strongly on light incidence angle and polarization. This provides valuable insight in solar cell processes in which novel concepts such as plasmonics, elongated nanostructures, and nano-lenses are used.

  11. High efficiency thin film CdTe and a-Si based solar cells

    SciTech Connect

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2000-01-04

    This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10

  12. Thermal stability of interconnected a-Si:H solar modules

    NASA Astrophysics Data System (ADS)

    Willing, F.; Bennett, M.; Newton, J.

    Interconnected solar modules with cell structures of glass/transparent-conducting-oxide (TCO)/piNa-Si/aluminum were heat-treated at a series of elevated temperatures in order to accelerate two degradation modes: interdiffusion at the aluminum/a-Si back contact, and conductivity loss at the aluminum/TCO contacts which serve as connections between individual cells in a module. Plots of device lifetime vs. 1/T extrapolated to normal operating temperatures showed that neither degradation mode would significantly effect module stability over the projected lifetime of the device.

  13. Structural and interfacial properties of large area n-a-Si:H/i-a-Si:H/p-c-Si heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Pehlivan, Özlem; Menda, Deneb; Yilmaz, Okan; Kodolbaş, Alp Osman; Ödemir, Orhan; Duygulu, Özgur; Kutlu, Kubilay; Tomak, Mehmet

    2013-09-01

    Large area (72 cm2) doping inversed HIT solar cells (n-a-Si:H/i-a-Si:H/p-c-Si) were investigated by High Resolution Transmission Electron Microscopy (HR-TEM), Spectroscopic Ellipsometry (SE), Fourier Transform Infrared Attenuated Total Reflection spectroscopy (FTIR-ATR) and current-voltage (I-V) measurement. Mixture of microcrystalline and amorphous phase was identified via HR-TEM picture at the interface of i-a-Si:H/p-c-Si heterojunction. Using multilayer and Effective Medium Approximation (EMA) to the SE data, excellent fit was obtained, describing the evolution of microstructure of a-Si:H deposited at 225 °C on p-c-Si. Cody energy gap with combination of FTIR-ATR analyses were consistent with HRTEM and SE results in terms of mixture of microcrystalline and amorphous phase. Presence of such hetero-interface resulted poor open circuit voltage, Voc, of the fabricated solar cell devices, determined by I-V measurement under 1 sun. Moreover, Voc was also estimated from dark I-V analysis, revealing consistent Voc values. Efficiencies of fabricated cells over complete c-Si wafer (72 cm2) were calculated as 4.7 and 9.2 %. Improvement in efficiency was interpreted due to the back surface cleaning and selecting aluminum/silver alloy as front contact.

  14. Influence of base pressure and atmospheric contaminants on a-Si:H solar cell properties

    SciTech Connect

    Woerdenweber, J.; Schmitz, R.; Mueck, A.; Zastrow, U.; Niessen, L.; Gordijn, A.; Carius, R.; Beyer, W.; Rau, U.; Merdzhanova, T.; Stiebig, H.

    2008-11-01

    The influence of atmospheric contaminants oxygen and nitrogen on the performance of thin-film hydrogenated amorphous silicon (a-Si:H) solar cells grown by plasma-enhanced chemical vapor deposition at 13.56 MHz was systematically investigated. The question is addressed as to what degree of high base pressures (up to 10{sup -4} Torr) are compatible with the preparation of good quality amorphous silicon based solar cells. The data show that for the intrinsic a-Si:H absorber layer exists critical oxygen and nitrogen contamination levels (about 2x10{sup 19} atoms/cm{sup 3} and 4x10{sup 18} atoms/cm{sup 3}, respectively). These levels define the minimum impurity concentration that causes a deterioration in solar cell performance. This critical concentration is found to depend little on the applied deposition regime. By enhancing, for example, the flow of process gases, a higher base pressure (and leak rate) can be tolerated before reaching the critical contamination level. The electrical properties of the corresponding films show that increasing oxygen and nitrogen contamination results in an increase in dark conductivity and photoconductivity, while activation energy and photosensitivity are decreased. These effects are attributed to nitrogen and oxygen induced donor states, which cause a shift of the Fermi level toward the conduction band and presumably deteriorate the built-in electric field in the solar cells. Higher doping efficiencies are observed for nitrogen compared to oxygen. Alloying effects (formation of SiO{sub x}) are observed for oxygen contaminations above 10{sup 20} atoms/cm{sup 3}, leading to an increase in the band gap.

  15. Structural and electronic studies of a-SiGe:H alloys

    SciTech Connect

    Paul, W. )

    1993-04-01

    This report describes work to produce alloys of a-Si[sub 1-x]Ge[sub x]:H of improved photoelectronic quality by plasma-enhanced chemical vapor deposition (PECVD). The goal was to discover optimum preparation conditions for the end-component, a-Ge:H, to establish whether modification of the usual practice of starting from a-Si:H preparation conditions was advisable. Such modification, found to be necessary, gave films of a-Ge:H with efficiency-mobility-lifetime products ([eta][mu][tau]) 10[sup 2] to 10[sup 3] higher than were earlier available, in homogeneous environmentally stable material. Both a-Ge:H and a-Si[sub 1-x]Ge[sub x]:H of large x were studied in detail. Alloy material was shown to have [eta][mu][tau] 10[sup 2] larger than found earlier. However, just as the [eta][mu][tau] of a-Si:H decreases when Ge is added, so also the [eta][mu][tau] of these alloys with Si addition. By contrast, the ambipolar diffusion lengths, L[sub o] which are governed by the hole mobility, vary by only a factor of two over the whole alloy series. Using the experimental finding of a small valence band offset between a-Si:H and a-Ge:H compositional fluctuations on a 10-mm scale are suggested to explain the behavior of [eta][mu][tau] and L[sub o] The implications for eventual improvement of the alloys are profound, but require direct experimental tests of the postulated compositional fluctuations.

  16. Pulsed Nd-YAG laser welding of A SiC particulate reinforced aluminium alloy composite

    NASA Astrophysics Data System (ADS)

    Yue, T. M.; Xu, J. H.; Man, H. C.

    1997-01-01

    This paper examines the laser welding behaviour of a SiC particulate reinforced Al-alloy 2124 composite using a pulsed Nd-YAG laser. The influences of laser welding parameters of laser intensity, pulse duration and the beam's focus position on the depth of weld penetration as well as the size of fusion zone were investigated. These investigations have led to an optimum welding condition proposed for pulsed laser welding of SiC particulate reinforced aluminium alloy composites with minimum defects.

  17. Research on the stability, electronic properties, and structure of a-Si:H and its alloys

    SciTech Connect

    Street, R.A.; Jackson, W.B.; Johnson, N.; Nebel, C.; Hack, M.; Santos, P.; Thompson, R.; Tsai, C.C.; Walker, J. )

    1992-12-01

    Objective is to obtain a comprehensive understanding of structure and electronic properties of a-Si:H as they apply to solar cells. First observations were of light enhancement and field suppression of H diffusion in a-Si:H. Theoretical studies were made of hydrogen density of states distribution and its relation to defect metastability. Reduced density of light induced defect is observed in a-Si:H deposited in a remote hydrogen plasma reactor at 400 C. Kinetics of metastable defect creation using forward bias in a p-i-n diode to induce defects were studied and compared to light-induced defect creation in the same devices. Studies were made of transport at high electric field and low temperature. Detailed studies were made of kinetics of dopant metastability in n-type and p-type a-Si:H.

  18. Well-Passivated a-Si:H Back Contacts for Double-Heterojunction Silicon Solar Cells: Preprint

    SciTech Connect

    Page, M. R.; Iwaniczko, E.; Xu, Y.; Wang, Q.; Yan, Y.; Roybal, L.; Branz, H. M.; Wang, T. H.

    2006-05-01

    We have developed hydrogenated amorphous silicon (a Si:H) back contacts to both p- and n-type silicon wafers, and employed them in double-heterojunction solar cells. These contacts are deposited entirely at low temperature (<250 C) and replace the standard diffused or alloyed back-surface-field contacts used in single-heterojunction (front-emitter only) cells. High-quality back contacts require excellent surface passivation, indicated by a low surface recombination velocity of minority-carriers (S) or a high open-circuit voltage (Voc). The back contact must also provide good conduction for majority carriers to the external circuit, as indicated by a high light I-V fill factor. We use hot-wire chemical vapor deposition (HWCVD) to grow a-Si:H layers for both the front emitters and back contacts. Our improved a-Si:H back contacts contribute to our recent achievement of a confirmed 18.2% efficiency in double-heterojunction silicon solar cells on p type textured silicon wafers.

  19. Study and Simulation of the Heterojunction Thin Film Solar Cell a-Si( n)/a-Si( i)/c-Si( p)/a-Si( i)/a-Si( p)

    NASA Astrophysics Data System (ADS)

    Toufik, Zarede; Hamza, Lidjici; Mohamed, Fathi; Achour, Mahrane

    2016-08-01

    In this article, we present a study based on numerical simulation of the electrical characteristics of a thin-film heterojunction solar cell (a-Si( n)/a-Si( i)/c-Si( p)/a-Si( i)/a-Si( p)), using the automat for simulation of hetero-structures (AFORS-Het) software. This cell is composed of four main layers of silicon (Si): (i) 5 nm amorphous silicon doped n, (ii) 100 μm crystalline silicon (substrate) doped p, (iii) 5 nm amorphous silicon doped p, and (iv) 3 nm amorphous silicon intrinsic. This cell has a front and rear metal contact of aluminum and zinc oxide (ZnO) front layer transparent conductive oxide of 80 nm thickness. The simulations were performed at conditions of "One Sun" irradiation with air mass 1.5 (AM1.5), and under absolute temperature T = 300 K. The simulation results have shown a high electrical conversion efficiency of about 30.29% and high values of open circuit voltage V oc = 779 mV. This study has also shown that the studied cell has good quality light absorption on a very broad spectrum.

  20. Performance of Hydrogenated a-Si:H Solar Cells with Downshifting Coating: Preprint

    SciTech Connect

    Nemeth, B.; Xu, Y.; Wang, H.; Sun, T.; Lee, B. G.; Duda, A.; Wang, Q.

    2011-05-01

    We apply a thin luminescent downshifting (LDS) coating to a hydrogenated amorphous Si (a-Si:H) solar cell and study the mechanism of possible current enhancement. The conversion material used in this study converts wavelengths below 400 nm to a narrow line around 615 nm. This material is coated on the front of the glass of the a-Si:H solar cell with a glass/TCO/p/i/n/Ag superstrate configuration. The initial efficiency of the solar cell without the LDS coating is above 9.0 % with open circuit voltage of 0.84 V. Typically, the spectral response below 400 nm of an a-Si:H solar cell is weaker than that at 615 nm. By converting ultraviolet (UV) light to red light, the solar cell will receive more red photons; therefore, solar cell performance is expected to improve. We observe evidence of downshifting in reflectance spectra. The cell Jsc decreases by 0.13 mA/cm2, and loss mechanisms are identified.

  1. Measured and simulated temperature dependence of a-Si:H solar cell parameters

    SciTech Connect

    Stiebig, H.; Eickhoff, T.; Zimmer, J.; Beneking, C.; Wagner, H.

    1996-12-31

    In contrast to the successful application of analytic equations to the current-voltage behavior of crystalline silicon solar cells in the dark and under AM1.5 illumination, the description of a-Si:H solar cells parameters requires device modelling concepts taking the full set of semiconductor equations into account. This in particular holds for the explanation of the temperature dependence (225--400K) of experimentally determined a-Si:H p-i-n solar cell parameters. Device modelling calculations show that the observed decrease of the short circuit current at AM1.5 with lower T is much more effected by the additional charge trapped in the tail states and recharging of defect states than by the broadening of the gap. The induced electric field distortion blocks the extraction of photo generated holes. The open circuit voltage V{sub oc} increases with lower T which is caused by the same trapping effect.

  2. Flexible micromorph tandem a-Si/{mu}c-Si solar cells

    SciTech Connect

    Soederstroem, T.; Haug, F.-J.; Terrazzoni-Daudrix, V.; Ballif, C.

    2010-01-15

    The deposition of a stack of amorphous (a-Si:H) and microcrystalline ({mu}c-Si:H) tandem thin film silicon solar cells (micromorph) requires at least twice the time used for a single junction a-Si:H cell. However, micromorph devices have a higher potential efficiency, thanks to the broader absorption spectrum of {mu}c-Si:H material. High efficiencies can only be achieved by mitigating the nanocracks in the {mu}c-Si:H cell and the light-induced degradation of the a-Si:H cell. As a result, {mu}c-Si:H cell has to grow on a smooth substrate with large periodicity (>1 {mu}m) and the a-Si:H cell on sharp pyramids with smaller feature size ({approx}350 nm) to strongly scatter the light in the weak absorption spectra of a-Si:H material. The asymmetric intermediate reflector introduced in this work uncouples the growth and light scattering issues of the tandem micromorph solar cells. The stabilized efficiency of the tandem n-i-p/n-i-p micromorph is increased by a relative 15% compared to a cell without AIR and 32% in relative compared to an a-Si:H single junction solar cells. The overall process (T<200 deg. C) is kept compatible with low cost plastic substrates. The best stabilized efficiency of a cell deposited on polyethylene-naphthalate plastic substrate is 9.8% after 1000 h of light soaking at V{sub oc}, 1 sun, and 50 deg. C.

  3. Light trapping in a-Si:H thin film solar cells using silver nanostructures

    NASA Astrophysics Data System (ADS)

    Wang, P. H.; Theuring, M.; Vehse, M.; Steenhoff, V.; Agert, C.; Brolo, A. G.

    2017-01-01

    Plasmonic thin film solar cells (modified with metallic nanostructures) often display enhanced light absorption due to surface plasmon resonance (SPR). However, the plasmonic field localization may not be significantly beneficial to improved photocurrent conversion efficiency for all types of cell configurations. For instance, the integration of random metallic nanoparticles (NPs) into thin film solar cells often introduces additional texturing. This texturing might also contribute to enhanced photon-current efficiency. An experimental systematic investigation to decouple both the plasmonic and the texturing contributions is hard to realize for cells modified with randomly deposited metallic nanoparticles. This work presents an experimental and computational investigation of well-defined plasmonic (Ag) nanoparticles, fabricated by nanosphere lithography, integrated to the back contact of hydrogenated amorphous silicon (a-Si:H) solar cells. The size, shape, periodicity and the vertical position of the Ag nanoparticles were well-controlled. The experimental results suggested that a-Si:H solar cells modified with a periodic arrangement of Ag NPs (700 nm periodicity) fabricated just at the top of the metal contact in the back reflector yields the highest improvement in terms of current density (JSC). Finite-difference time-domain (FDTD) simulations also indicated that Ag nanoparticles located at the top of the metal contact in the back reflector is expected to lead to the most efficient light confinement inside the a-Si:H absorber intrinsic layer (i-layer).

  4. Parameter variation of the one-diode model of a-Si and a- Si/μc-Si solar cells for modeling light-induced degradation

    NASA Astrophysics Data System (ADS)

    Weicht, J. A.; Hamelmann, F. U.; Behrens, G.

    2014-11-01

    For analyzing the long-term behavior of thin film a-Si/μc-Si photovoltaic modules, it is important to observe the light-induced degradation (LID) in dependence of the temperature for the parameters of the one-diode model for solar cells. According to the IEC 61646 standard, the impact of LID on module parameters of these thin film cells is determined at a constant temperature of 50°C with an irradiation of 1000 W/m2 at open circuit conditions. Previous papers examined the LID of thin film a-Si cells with different temperatures and some others are about a-Si/μc-Si. In these previous papers not all parameters of the one-diode model are examined. We observed the serial resistance (Rs), parallel resistance (Rp), short circuit current (Isc), open circuit voltage (Uoc), the maximum power point (MPP: Umpp, Impp and Pmpp) and the diode factor (n). Since the main reason for the LID of silicon-based thin films is the Staebler Wronski effect in the a-Si part of the cell, the temperature dependence of the healing of defects for all parameters of the one-diode model is also taken into account. We are also measuring modules with different kind of transparent conductive oxides: In a-Si thin film solar cells fluorine-doped tin oxide (FTO) is used and for thin film solar cells of a-Si/μc-Si boron- doped zinc oxide is used. In our work we describe an approach for transferring the parameters of a one-diode model for tandem thin film solar cells into the one-diode model for each part of the solar cell. The measurement of degradation and regeneration at higher temperatures is the necessary base for optimization of the different silicon-based thin films in warm hot climate.

  5. Electrical transport mechanisms in a-Si:H/c-Si heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Schulze, T. F.; Korte, L.; Conrad, E.; Schmidt, M.; Rech, B.

    2010-01-01

    We present temperature-dependent measurements of I-V curves in the dark and under illumination in order to elucidate the dominant transport mechanisms in amorphous silicon-crystalline silicon (a-Si:H/c-Si) heterojunction solar cells. ZnO:Al/(p )a-Si:H/(n)c-Si/(n+)a-Si:H cells are compared with inversely doped structures and the impact of thin undoped a-Si:H buffer layers on charge carrier transport is explored. The solar cell I-V curves are analyzed employing a generalized two-diode model which allows fitting of the experimental data for a broad range of samples. The results obtained from the fitting are discussed using prevalent transport models under consideration of auxiliary data from constant-final-state-yield photoelectron spectroscopy, surface photovoltage, and minority carrier lifetime measurements. Thus, an in-depth understanding of the device characteristics is developed in terms of the electronic properties of the interfaces and thin films forming the heterojunction. It is shown that dark I-V curve fit parameters can unequivocally be linked to the open circuit voltage under illumination which opens a way to a simplified device assessment.

  6. Research on the stability of a-Si:H based solar cells by SMART

    NASA Astrophysics Data System (ADS)

    Wronski, C. R.; Maley, N.

    1991-08-01

    Stable Materials Advisory Research Team (SMART) was established to develop a unified approach to address the stability problem in a-Si:H based solar cells. The goal of the coordinated research effort by industrial laboratory and research institution members is to resolve whether a-Si:H based materials are intrinsically unstable and if high efficiency cells can have a 20 year lifetime. This paper reviews ongoing research which addresses both material and device issues in the effort to improve the material properties and solar cell performance. Results are presented for materials and device structures obtained using several deposition techniques with hydrogen content varying from about 20% to 8%. Also several issues are discussed which arose from the wide range of measurements carried out on the same materials in different laboratories.

  7. Influence of Deposition Pressure on the Properties of Round Pyramid Textured a-Si:H Solar Cells for Maglev.

    PubMed

    Lee, Jaehyeong; Choi, Wonseok; Lee, Kyuil; Lee, Daedong; Kang, Hyunil

    2016-05-01

    HIT (Heterojunction with Intrinsic Thin-layer) photovoltaic cells is one of the highest efficiencies in the commercial solar cells. The pyramid texturization for reducing surface reflectance of HIT solar cells silicon wafers is widely used. For the low leakage current and high shunt of solar cells, the intrinsic amorphous silicon (a-Si:H) on substrate must be uniformly thick of pyramid structure. However, it is difficult to control the thickness in the traditional pyramid texturing process. Thus, we textured the intrinsic a-Si:H thin films with the round pyramidal structure by using HNO3, HF, and CH3COOH solution. The characteristics of round pyramid a-Si:H solar cells deposited at pressure of 500, 1000, 1500, and 2000 mTorr by PECVD (Plasma Enhanced Chemical Vapor Deposition) was investigated. The lifetime, open circuit voltage, fill factor and efficiency of a-Si:H solar cells were investigated with respect to various deposition pressure.

  8. Microscopic origins of metastable effects in a-Si:H and deep defect characterization in a-Si,Ge:H alloys

    SciTech Connect

    Cohen, J.D. )

    1992-07-01

    This report describes works to use transient photocapacitance and photocurrent measurements to determine the deep defect distribution and processes in low-band-gap a-Si,Ge:H alloys. Samples for these studies were produced by the photochemical vapor deposition (photo-CVD) growth method and were obtained through a collaboration with researchers at the University of Delaware. This report discusses how a detailed comparison between the photocapacitance and photocurrent spectra can be used to separately examine the majority and minority carrier processes. The results are as follows: (1) The midgap defect densities in the alloy regime near 1.3 eV can be as low as 5 {times} 10{sup 16} cm{sup {minus}3} in such photo-CVD samples. (2) There exists a second defect band roughly 0.4 eV below E{sub c} of a similar magnitude to the midgap defect density that exhibits significant lattice relaxation behavior in its electron trapping dynamics. (3) The hole {mu}{tau} products determined for the lowest defect sample are roughly 5 {times} 10{sup {minus}10} cm{sup 2}/V, comparable with the highest hole {mu}{tau} products reported in sandwich geometry measurements for alloys in this composition range. (4) The hole {mu}{tau} is found to be roughly inversely proportional to the midgap defect density for the samples studied. This is consistent with the fact that the effective minority carrier lifetime for such measurements is limited by the deep state trapping time.

  9. Optical losses in multi-junction a-Si:H based solar cells and modules

    NASA Astrophysics Data System (ADS)

    Wiedeman, S.; Morris, J.; Yang, L.

    A comprehensive optical model is described which is applicable to glass/textured CTO/a-Si:H/a-SiGe:H-based multijunction cells and allows the calculation of optical absorption in each layer of the solar cell. The major optical losses which limit the output current density of tandem cells using 1.72-eV/1.50-eV bandgap a-Si:H/a-SiGe:H and an ITO/Ag rear contact to about 20.8 mA/sq cm (sum of both junctions) are identified and discussed. It is shown that improvements in the reflectivity and scattering properties of the rear contact may be expected to result in current densities of 22.3 mA/sq cm in this type of cell using intrinsic layers of limited thickness. The use of low-cost materials, such as soda-lime glass and the aluminum rear contacts typically employed in the manufacture of large-area modules, should reduce the total current density available to 18.5 mA/sq cm.

  10. Role of a disperse carbon interlayer on the performances of tandem a-Si solar cells

    PubMed Central

    Araújo, Andreia; Barros, Raquel; Mateus, Tiago; Gaspar, Diana; Neves, Nuno; Vicente, António; Filonovich, Sergej A; Barquinha, Pedro; Fortunato, Elvira; Ferraria, Ana M; Botelho do Rego, Ana M; Bicho, Ana; Águas, Hugo; Martins, Rodrigo

    2013-01-01

    We report the effect of a disperse carbon interlayer between the n-a-Si:H layer and an aluminium zinc oxide (AZO) back contact on the performance of amorphous silicon solar cells. Carbon was incorporated to the AZO film as revealed by x-ray photoelectron spectroscopy and energy-dispersive x-ray analysis. Solar cells fabricated on glass substrates using AZO in the back contact performed better when a disperse carbon interlayer was present in their structure. They exhibited an initial efficiency of 11%, open-circuit voltage Voc = 1.6 V, short-circuit current JSC = 11 mA cm−2 and a filling factor of 63%, that is, a 10% increase in the JSC and 20% increase in the efficiency compared to a standard solar cell. PMID:27877602

  11. Role of a disperse carbon interlayer on the performances of tandem a-Si solar cells.

    PubMed

    Araújo, Andreia; Barros, Raquel; Mateus, Tiago; Gaspar, Diana; Neves, Nuno; Vicente, António; Filonovich, Sergej A; Barquinha, Pedro; Fortunato, Elvira; Ferraria, Ana M; Botelho do Rego, Ana M; Bicho, Ana; Águas, Hugo; Martins, Rodrigo

    2013-08-01

    We report the effect of a disperse carbon interlayer between the n-a-Si:H layer and an aluminium zinc oxide (AZO) back contact on the performance of amorphous silicon solar cells. Carbon was incorporated to the AZO film as revealed by x-ray photoelectron spectroscopy and energy-dispersive x-ray analysis. Solar cells fabricated on glass substrates using AZO in the back contact performed better when a disperse carbon interlayer was present in their structure. They exhibited an initial efficiency of 11%, open-circuit voltage Voc = 1.6 V, short-circuit current JSC = 11 mA cm(-2) and a filling factor of 63%, that is, a 10% increase in the JSC and 20% increase in the efficiency compared to a standard solar cell.

  12. Annual dependences of generated power and electrical energy for a-Si:H-based solar cells

    NASA Astrophysics Data System (ADS)

    Kryuchenko, Yu. V.; Sachenko, A. V.; Bobyl', A. V.; Kostylev, V. P.; Sokolovskyi, I. O.; Terukov, E. I.; Verbitskii, V. N.; Nikolaev, Yu. A.

    2013-11-01

    The annual dependences of the powers and energies generated by the unit area of a solar cell (SC) are calculated for a-Si:H-based SCs operating at latitudes of 45°N, 50°N, 55°N, and 60°N and in some geographical localities of Russia. Normalization of these dependences gives an idea about the corresponding annual dependences for SCs based on other semiconductors. Combined with the data on the average number of sunny days in a year (or the total duration of sunshine per year) for a specific region in Russia, this information makes it possible, in particular, to judge about the prospects for constructing solar power plants in these regions. As a result, the regions in Russia for which the excess over the average values of electrical energy generated by solar power plants may reach 24% are determined.

  13. Fabrication of Source/Drain Electrodes for a-Si:H Thin-Film Transistors Using a Single Cu Alloy Target

    NASA Astrophysics Data System (ADS)

    Lee, J. H.; Lee, C. Y.; Nam, H. S.; Lee, J. G.; Yang, H. J.; Ho, W. J.; Jeong, J. Y.; Koo, D. H.

    2011-11-01

    A Cu alloy/Cu alloy oxide bilayer structure was formed on an n +-a-Si:H substrate using a single Cu alloy target. It was employed for the source/drain electrodes in the fabrication of a-Si:H thin-film transistors with good electrical performance, high thermal stability, and good adhesion. Transmission electron microscopy and electron energy-loss spectroscopy analyses revealed that the initial sputtering of the Cu alloy in O2/Ar allowed for preferential oxidation of Si and the formation of a SiO x /Cu-supersaturated a-Si:H bilayer at the copper oxide-a-Si:H interface. This bilayer turned into an SiO x /Cu3Si bilayer after annealing at 300°C. It provided a stable contact structure with low contact resistance.

  14. Broadband photocurrent enhancement in a-Si:H solar cells with plasmonic back reflectors.

    PubMed

    Morawiec, Seweryn; Mendes, Manuel J; Filonovich, Sergej A; Mateus, Tiago; Mirabella, Salvatore; Aguas, Hugo; Ferreira, Isabel; Simone, Francesca; Fortunato, Elvira; Martins, Rodrigo; Priolo, Francesco; Crupi, Isodiana

    2014-06-30

    Plasmonic light trapping in thin film silicon solar cells is a promising route to achieve high efficiency with reduced volumes of semiconductor material. In this paper, we study the enhancement in the opto-electronic performance of thin a-Si:H solar cells due to the light scattering effects of plasmonic back reflectors (PBRs), composed of self-assembled silver nanoparticles (NPs), incorporated on the cells' rear contact. The optical properties of the PBRs are investigated according to the morphology of the NPs, which can be tuned by the fabrication parameters. By analyzing sets of solar cells built on distinct PBRs we show that the photocurrent enhancement achieved in the a-Si:H light trapping window (600 - 800 nm) stays in linear relation with the PBRs diffuse reflection. The best-performing PBRs allow a pronounced broadband photocurrent enhancement in the cells which is attributed not only to the plasmon-assisted light scattering from the NPs but also to the front surface texture originated from the conformal growth of the cell material over the particles. As a result, remarkably high values of J(sc) and V(oc) are achieved in comparison to those previously reported in the literature for the same type of devices.

  15. High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

    SciTech Connect

    Guha, S.; Yang, J.

    2005-10-01

    The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

  16. Probe of field collapse in a-Si:H solar cells

    SciTech Connect

    Wang, Q.; Crandall, R.S.

    1996-12-31

    The authors study the effect of illumination intensity on solar cell performance in a-Si:H solar cells. They find that the fill factor strongly depends on light intensity. As they increase the illumination intensity from low levels to one sun they observe a decrease in fill factor of approximately 15% in as grown cells. The authors attribute this effect to electric field collapse inside the cell. They propose that photogenerated space charge (free and trapped charge) increases with light intensity and causes field collapse. They describe the origin of space charge and the associated capacitance-photocapacitance. They measure the photocapacitance as a barometer to probe the collapsed field. The authors obtain a good agreement between photocapacitance experiments and theory. They also explore the light intensity dependence of photocapacitance and explain the decrease of FF with the increasing light intensity.

  17. Optimization of imprintable nanostructured a-Si solar cells: FDTD study.

    PubMed

    Fisker, Christian; Pedersen, Thomas Garm

    2013-03-11

    We present a finite-difference time-domain (FDTD) study of an amorphous silicon (a-Si) thin film solar cell, with nano scale patterns on the substrate surface. The patterns, based on the geometry of anisotropically etched silicon gratings, are optimized with respect to the period and anti-reflection (AR) coating thickness for maximal absorption in the range of the solar spectrum. The structure is shown to increase the cell efficiency by 10.2% compared to a similar flat solar cell with an optimized AR coating thickness. An increased back reflection can be obtained with a 50 nm zinc oxide layer on the back reflector, which gives an additional efficiency increase, leading to a total of 14.9%. In addition, the patterned cells are shown to be up to 3.8% more efficient than an optimized textured reference cell based on the Asahi U-type glass surface. The effects of variations of the optimized solar cell structure due to the manufacturing process are investigated, and shown to be negligible for variations below ±10%.

  18. Alloys in cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Jensen, Douglas Garth

    Alloys formed intentionally or unintentionally during the fabrication of CdTe/CdS solar cells were investigated. The primary focuses were (1) characterizing thin films of CdTesb{1-x}Ssb{x} since these alloys appear to be present in all high-efficiency CdTe/CdS solar cells, and (2) investigating how these alloys affect solar cell performance. Thin films of CdTesb{1-x}Ssb{x} were fabricated and subjected to heat treatments under conditions identical to those used for making CdTe/CdS solar cells. The films were characterized by X-Ray Diffraction, Energy Dispersive Spectroscopy, Scanning Electron Microscopy, and optical measurements. The as-deposited CdTesb{1-x}Ssb{x} films were generally single-phase even when x was well within the miscibility gap shown on CdTe-CdS pseudo-binary phase diagrams. Heat treatments at 415sp°C in the presence of CdClsb2 promoted phase segregation. From diffraction analysis of the phase-segregated films, the solubility limits at 415sp°C of CdS in CdTe, and of CdTe in CdS were found to be 5.8± 0.2% and 3± 1%, respectively. Conventional CdTe/CdS solar cells and novel solar cells made by depositing CdTesb{1-x}Ssb{x}, in place of CdTe were fabricated, tested, characterized, and compared. For the conventional solar cells, diffusion of CdS into the CdTe layer during the fabrication process converted the CdTe to CdTesb{1-x}Ssb{x} with x ranging from the 5.8% solubility limit near the junction to {<}1% near the back contact. Similarly, the CdS layer was converted to CdSsb{1-y}Tesb{y} with y near the 3% solubility limit, in some cases, and {<}1% in cases where the CdS film was annealed with CdClsb2 prior to depositing CdTe. The performance of CdTesb{1-x}Ssb{x}/CdS cells made with x = 0.05-0.06 throughout the absorber layer was nearly identical to the CdTe/CdS cells. This indicates that the operation of conventional devices is largely controlled by the alloys formed by interdiffusion. For the CdTesb{1-x}Ssb{x}/CdS devices, less CdS was consumed by

  19. Microstructure and lateral conductivity control of hydrogenated nanocrystalline silicon oxide and its application in a-Si:H/a-SiGe:H tandem solar cells

    NASA Astrophysics Data System (ADS)

    Tian-Tian, Li; Tie, Yang; Jia, Fang; De-Kun, Zhang; Jian, Sun; Chang-Chun, Wei; Sheng-Zhi, Xu; Guang-Cai, Wang; Cai-Chi, Liu; Ying, Zhao; Xiao-Dan, Zhang

    2016-04-01

    Phosphorous-doped hydrogenated nanocrystalline silicon oxide (n-nc-SiO x :H) films are prepared via radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). Increasing deposition power during n-nc-SiO x :H film growth process can enhance the formation of nanocrystalline and obtain a uniform microstructure of n-nc-SiO x :H film. In addition, in 20s interval before increasing the deposition power, high density small grains are formed in amorphous SiO x matrix with higher crystalline volume fraction (I c) and have a lower lateral conductivity. This uniform microstructure indicates that the higher I c can leads to better vertical conductivity, lower refractive index, wider optical band-gap. It improves the back reflection in a-Si:H/a-SiGe:H tandem solar cells acting as an n-nc-SiO x :H back reflector prepared by the gradient power during deposition. Compared with the sample with SiO x back reflector, with a constant power used in deposition process, the sample with gradient power SiO x back reflector can enhance the total short-circuit current density (J sc) and the initial efficiency of a-Si:H/a-SiGe:H tandem solar cells by 8.3% and 15.5%, respectively. Project supported by the Hi-Tech Research and Development Program of China (Grant No. 2013AA050302), the National Natural Science Foundation of China (Grant No. 61474065), Tianjin Municipal Research Key Program of Application Foundation and Advanced Technology, China (Grant No. 15JCZDJC31300), the Key Project in the Science & Technology Pillar Program of Jiangsu Province, China (Grant No. BE2014147-3), and the Specialized Research Fund for the Ph. D. Program of Higher Education, China (Grant No. 20120031110039).

  20. Measurement techniques for evaluation of a-Si:H solar cells

    NASA Astrophysics Data System (ADS)

    Bennett, M. S.; Arya, R. R.

    1986-10-01

    Analytical techniques which use I-V data on solar cells to characterize the performance of the cells are reviewed, with emphasis on a-Si:H p-i-n cells with a glass/conducting tin oxide (CTO)/p-i-n/metal structure. Quantum efficiency measurements identify the number of photogenerated electrons delivered to an external load for each photon striking the cell. The dark I-V quantifies the proportion of electrical energy generated by the cell when exposed to light which will be available at the output terminal. The series resistance of cells, and thereby the efficiency of the system, is calculated in terms of the resistances of the undepleted part of the insulator, of the CTO, between the CTO and the p-layer, and between the n-layer and the metal.

  1. Effect of metal/P-doped a-Si:H junctions on the photovoltage of a-Si:H solar cells

    SciTech Connect

    Sakai, Y.; Matsumura, M.; Nakato, Y.; Tsubomura, H.

    1987-10-15

    The open-circuit photovoltages (V/sub oc/) of a-Si:H solar cells having a Glass/TCO/p-i-n a-Si:H/metal structure were examined as a function of the thickness of the n layer. The V/sub oc/ stayed constant at --0.8 V, irrespective of the kind of metals, as far as the thickness of the n layer was larger than 15 nm, but dropped when the n layer got thinner. This effect was the stronger, the smaller the work function of the metal. The decrease of V/sub oc/ is attributed to complete depletion of the n layer, leading to the reduction of the potential gradient in the i layer. The effects of the metal/P-doped a-Si:H junction were further investigated using cells having a Glass/TCO/n-i-n/metal structure and different doping concentrations for the latter n layer. The results obtained supported the above-mentioned conclusion.

  2. Flexible a-Si:H Solar Cells with Spontaneously Formed Parabolic Nanostructures on a Hexagonal-Pyramid Reflector.

    PubMed

    Dong, Wan Jae; Yoo, Chul Jong; Cho, Hyoung Won; Kim, Kyoung-Bo; Kim, Moojin; Lee, Jong-Lam

    2015-04-24

    Flexible amorphous silicon (a-Si:H) solar cells with high photoconversion efficiency (PCE) are demonstrated by embedding hexagonal pyramid nanostructures below a Ag/indium tin oxide (ITO) reflector. The nanostructures constructed by nanoimprint lithography using soft materials allow the top ITO electrode to spontaneously form parabolic nanostructures. Nanoimprint lithography using soft materials is simple, and is conducted at low temperature. The resulting structure has excellent durability under repeated bending, and thus, flexible nanostructures are successfully constructed on flexible a-Si:H solar cells on plastic film. The nanoimprinted pyramid back reflector provides a high angular light scattering with haze reflectance >98% throughout the visible spectrum. The spontaneously formed parabolic nanostructure on the top surface of the a-Si:H solar cells both reduces reflection and scatters incident light into the absorber layer, thereby elongating the optical path length. As a result, the nanopatterned a-Si:H solar cells, fabricated on polyethersulfone (PES) film, exhibit excellent mechanical flexibility and PCE increased by 48% compared with devices on a flat substrate.

  3. Study of Staebler-Wronsky degradation effect in a Si:H based P-I-N solar cells

    NASA Technical Reports Server (NTRS)

    Naseem, Hameed; Herman, A. M.

    1988-01-01

    The objective of this study is to improve the stability and efficiency of thin solar cells with emphasis on a-Si:H devices. The research project was broken down into three main phases. The first involves designing and building a UHV glow discharge system; the second involves making good quality films and eventually efficient cells; the final phase will be analytical.

  4. Research of nano silver alloy pasteto solar cell

    NASA Astrophysics Data System (ADS)

    Du, Yizhou; Peng, Xiaoxai; Wang, He

    2017-01-01

    From theory and experiment, the method toimprove the performance of silver paste was explored. Through the analysis about the SEM images to the electrode contact section of the crystal silicon solar cell, the different contact modes and resistance calculation methods of the metal paste and silicon were verified. Through the resistance calculation, consideringthe different oxide and silver silicon contact alloy characteristics, two kinds of additive compositions were found that which may have good performance in alloy paste of the solar cell.

  5. Research on the stability, electronic properties, and structure of a-Si:H and its alloys. Final subcontract report, 1 June 1991--31 May 1994

    SciTech Connect

    Jackson, W.B.; Johnson, N.; Nickel, N.; Schumm, G.; Street, R.A.; Thompson, R.; Tsai, C.C.; Van de Walle, C.; Walker, J.

    1995-07-01

    The authors research has focused on defect metastability and a-Si:C:H alloys. A new aspect of the metastability is the growing interest in the defect recovery process. They have continued to explore the role of hydrogen in the metastability and other properties of a-Si:H. This has led them to perform first principles calculations of Si-H bonding configurations. Another new feature of the metastability work is the study of the effects in hydrogenated poly-silicon. They have grown and studied the properties of a-Si:C:H alloys, particularly to observe the effects of hydrogen dilution. Finally they have also studied the recent defect relaxation phenomenon, and concluded that the effects arise from contact effects and are not an intrinsic effect in a-Si:H. Section A presents some recent models of metastability. Section B discusses the metastability and equilibration effects in hydrogenated polysilicon, studied because of it`s close similarity to a-Si:H. Section C describes results on a-Si:C:H alloys. Section D contains first principle LDA calculations of Si-H bonds and relates these results to the a-Si:H diffusion and metastability properties. In section E the authors report capacitance measurements aimed at exploring the recent results by Cohen et al who find an anomalous relaxation process from the trap filling kinetics of a DLTS experiment.

  6. Comprehensive research on the stability and electronic properties of a-Si:H and a-SiGe:H alloys and devices. Final subcontract report, 10 March 1991--30 August 1994

    SciTech Connect

    Dalal, V.

    1995-04-01

    This report describes work on the growth of a-Si:H and a-(Si,Ge):H materials and devices using well-controlled growth techniques. The a-Si:H materials were grown at higher temperatures (300{degrees}-375{degrees}C) using electron-cyclotron-resonance (ECR) plasma techniques with a remote H beam. These films have excellent electronic quality and show significant improvements in stability compared with glow-discharge-produced a-Si:H materials. Several problems were encountered during the fabrication of devices in these materials, and we were able to overcome them by a systematic work on buffer layers in these cells. We also studied alternative designs for improving the stability of a-Si:H cells and produced graded-gap a-Si:H cells using glow-discharge that are more stable than comparable standard, ungraded glow discharge devices. Finally, systematic work was done to produce good-quality a-(Si,Ge):H films, using triode radio frequency (RF) glow-discharge with ion bombardment during growth. Diagnostic devices were made using these films, and the properties of the material, such as Urbach energies and hole mobility-lifetime products, were measured in these devices. We found a systematic increase in the Urbach energies, and a corresponding decrease in the hole and electron {mu}{tau} products, as the Ge content of the alloys increases.

  7. More insights into band gap graded a-SiGe:H solar cells by experimental and simulated data

    SciTech Connect

    Zimmer, J.; Stiebig, H.; Foelsch, J.; Finger, F.; Eickhoff, T.; Wagner, H.

    1997-07-01

    An experimental and numerical study of a-SiGe:H based solar cells with band gap graded i-layer in the shape of a V is presented. The variation of the location of the band gap minimum has strong influence on the solar cell performance. Comparisons of experimental and simulated data of the dark IV-behavior, IV-curves under illumination and the quantum efficiency allow insights into the transport and recombination behavior within the solar cell. The simulations reveal that the position as well as the charge state of the defects determine the device characteristics.

  8. Hybrid ZnO nanowire/a-Si:H thin-film radial junction solar cells using nanoparticle front contacts

    NASA Astrophysics Data System (ADS)

    Pathirane, M.; Iheanacho, B.; Tamang, A.; Lee, C.-H.; Lujan, R.; Knipp, D.; Wong, W. S.

    2015-10-01

    Hydrothermally synthesized disordered ZnO nanowires were conformally coated with a-Si:H thin-films to fabricate three dimensional hybrid nanowire/thin-film structures. The a-Si:H layer formed a radial junction p-i-n diode solar cell around the ZnO nanowire. The cylindrical hybrid solar cells enhanced light scattering throughout the UV-visible-NIR spectrum (300 nm-800 nm) resulting in a 22% increase in short-circuit current density compared to the reference planar p-i-n device. A fill factor of 69% and a total power conversion efficiency of 6.5% were achieved with the hybrid nanowire solar cells using a spin-on indium tin oxide nanoparticle suspension as the top contact.

  9. Hybrid ZnO nanowire/a-Si:H thin-film radial junction solar cells using nanoparticle front contacts

    SciTech Connect

    Pathirane, M. Iheanacho, B.; Lee, C.-H.; Wong, W. S.; Tamang, A.; Knipp, D.; Lujan, R.

    2015-10-05

    Hydrothermally synthesized disordered ZnO nanowires were conformally coated with a-Si:H thin-films to fabricate three dimensional hybrid nanowire/thin-film structures. The a-Si:H layer formed a radial junction p-i-n diode solar cell around the ZnO nanowire. The cylindrical hybrid solar cells enhanced light scattering throughout the UV-visible-NIR spectrum (300 nm–800 nm) resulting in a 22% increase in short-circuit current density compared to the reference planar p-i-n device. A fill factor of 69% and a total power conversion efficiency of 6.5% were achieved with the hybrid nanowire solar cells using a spin-on indium tin oxide nanoparticle suspension as the top contact.

  10. Large-area, triple-junction a-Si alloy production scale-up

    SciTech Connect

    Oswald, R.; O'Dowd, J. . Thin Film Div.)

    1993-04-01

    This report describes Solarex's work to advance its photovoltaic manufacturing technologies, reduce its a-Si:H module production costs, increase module performance, and expand the Solarex commercial production capacity. Solarex will meet these objectives by improving the deposition and quality of the transport front contact; optimizing the laser patterning process; scaling up the semiconductor deposition process; improving the back-contact deposition; and scaling up and improving the encapsulation and testing of its a-Si:H modules. In the Phase 1 portion of this subcontract, Solarex focused on scaling up components of the chemical vapor deposition system for deposition of the system contact, scaling up laser scribing techniques; triple-junction recipes for module production; and metal-oxide back contacts. The goal of these efforts is to adopt all portions of the manufacturing line to handle substrates larger than 0.37 m[sup 2].

  11. Origin of Photovoltage Enhancement via Interfacial Modification with Silver Nanoparticles Embedded in an a-SiC:H p-Type Layer in a-Si:H Solar Cells.

    PubMed

    Li, Tiantian; Zhang, Qixing; Ni, Jian; Huang, Qian; Zhang, Dekun; Li, Baozhang; Wei, Changchun; Yan, Baojie; Zhao, Ying; Zhang, Xiaodan

    2017-03-29

    We used silver nanoparticles (Ag-NPs) embedded in the p-type semiconductor layer of hydrogenated amorphous silicon (a-Si:H) solar cells in the Schottky barrier contact design to modify the interface between aluminum-doped ZnO (ZnO:Al, AZO) and p-type hydrogenated amorphous silicon carbide (p-a-SiC:H) without plasmonic absorption. The high work function of the Ag-NPs provided a good channel for the transport of photogenerated holes. A p-type nanocrystalline SiC:H layer was used to compensate for the real surface defects and voids on the surface of Ag-NPs to reduce recombination at the AZO/p-type layer interface, which then enhanced the photovoltage of single-junction a-Si:H solar cells to values as high as 1.01 V. The Ag-NPs were around 10 nm in diameter and thermally stable in the p-type a-SiC:H film at the solar-cell process temperature. We will also show that a wide range of photovoltages between 1.01 and 2.89 V could be obtained with single-, double-, and triple-junction solar cells based on the single-junction a-Si:H solar cells with tunable high photovoltage. These solar cells are suitable photocathodes for solar water-splitting applications.

  12. Computer analysis of a-Si:H based double junction solar cells

    SciTech Connect

    Palit, N.; Chatterjee, P.

    1997-07-01

    An integrated electrical-optical model has been used to simulate and examine ways of optimizing the performance of double junction solar cells, where both the component cells have a-Si:H absorber layers of identical material quality. In the optical modeling part they take into account both specular interference effects; and diffused reflectances and transmittances due to interface roughness. The model simulates carrier transport in the junction between the two p-i-n subcells with the help of a thin heavily defective recombination layer (RL) having a reduced band gap. Their results reveal that in order to simulate the current-voltage and the quantum efficiency (QE) characteristics of these cells, window losses and light-trapping effects need to be properly accounted for. Results indicate that the highest open-circuit voltage is attained when the majority carrier quasi-Fermi levels on either side of the RL coincide. Also for the highest multijunction cell efficiency the thicknesses of the component subcells are such that the electric field in both are fairly close to one another. Finally, the QE under AM1.5 bias light at the maximum power point has been shown to be extremely sensitive to thickness variations of the component subcells and hence an useful tool for multijunction cell optimization.

  13. Foaming of aluminium-silicon alloy using concentrated solar energy

    SciTech Connect

    Cambronero, L.E.G.; Ruiz-Roman, J.M.; Canadas, I.; Martinez, D.

    2010-06-15

    Solar energy is used for the work reported here as a nonconventional heating system to produce aluminium foam from Al-Si alloy precursors produced by powder metallurgy. A commercial precursor in cylindrical bars enclosed in a stainless-steel mould was heated under concentrated solar radiation in a solar furnace with varied heating conditions (heating rate, time, and temperature). Concentrated solar energy close to 300 W/cm{sup 2} on the mould is high enough to achieve complete foaming after heating for only 200 s. Under these conditions, the density and pore distribution in the foam change depending on the solar heating parameters and mould design. (author)

  14. Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling tools

    NASA Astrophysics Data System (ADS)

    Rubinelli, Francisco A.; Ramirez, Helena; Ruiz, Carlos M.; Schmidt, Javier A.

    2017-05-01

    Recombination losses of a-Si:H based p-i-n solar cells in the annealed state are analyzed with device computer modeling. Under AM1.5 illumination, the recombination rate in the intrinsic layer is shown to be controlled by a combination of losses through defect and tail states. The influence of the defect concentration on the characteristic parameters of a solar cell is analyzed. The impact on the light current-voltage characteristic curve of adopting very low free carrier mobilities and a high density of states at the band edge is explored under red and AM1.5 illumination. The distribution of trapped charge, electric field, and recombination loses inside the intrinsic layer is examined, and their influence on the solar cell performance is discussed. Solar cells with intrinsic layers deposited with and without hydrogen dilution are examined. It is found that the photocurrent at -2 V is not always a good approximation of the saturated reverse-bias photocurrent in a-Si:H p-i-n solar cells at room temperature. The importance of using realistic electrical parameters in solar cell simulations is emphasized.

  15. Space-charge-limited currents: Refinements in analysis and applications to a-Si1 - xGexH alloys

    NASA Astrophysics Data System (ADS)

    Weisfield, R. L.

    1983-11-01

    A new algorithm is described for deriving the density of states N(E) from the Fermi energy EF upwards toward the conduction band edge. This refinement in the analysis of space-charge-limited currents (SCLC) enables the accurate determination of N(E) by implicitly accounting for the spatial variations of physical quantities across the thickness of the diode. SCLC is measured in NiCr/n+/a-Si1-xGex: H/Pt diode structures. For a-Si:H samples, SCLC values for N(EF) are compared to those derived from admittance measurements on the same diodes. The two determinations agree in samples where 1016a-Si0.7Ge0.3: H is also investigated, as a function of hydrogen content cH, optical gap, and photoluminescence intensity IPL. In this alloy increasing cH causes N(EF) to decrease, to a minimum of 3×1016 for cH=14 at. %. IPL increases inversely with N(EF), confirming the sensitivity of SCLC to bulk nonradiative recombination centers. It is concluded that the SCLC measurement and analysis constitute a relatively simple, straightforward, and generally applicable method of obtaining the density of states in the gap of amorphous semiconductors.

  16. Characterization of intrinsic a-Si:H films prepared by inductively coupled plasma chemical vapor deposition for solar cell applications.

    PubMed

    Jeong, Chaehwan; Boo, Seongjae; Jeon, Minsung; Kamisako, Koichi

    2007-11-01

    The hydrogenated amorphous silicon (a-Si:H) films, which can be used as the passivation or absorption layer of solar cells, were prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD) and their characteristics were studied. Deposition process of a-Si:H films was performed by varying the parameters, gas ratio (H2/SiH4), radio frequency (RF) power and substrate temperature, while a working pressure was fixed at 70 m Torr. Their characteristics were studied by measuring thickness, optical bandgap (eV), photosensitivity, bond structure and surface roughness. When the RF power and substrate temperature were 300 watt and 200 degrees C, respectively, optical bandgap and photosensitivity, similar to the intrinsic a-Si:H film, were obtained. The Si-H stretching mode at 2000 cm(-1), which means a good quality of films, was found at all conditions. Although the RF power increased up to 400 watt, average of surface roughness got better, compared to a-Si:H films deposited by the conventional PECVD method. These results show the potential for developing the solar cells using ICP-CVD, which have the relatively less damage of plasma.

  17. Engineering of contact resistance between transparent single-walled carbon nanotube films and a-Si:H single junction solar cells by gold nanodots.

    PubMed

    Kim, Jeehwan; Hong, Augustin J; Chandra, Bhupesh; Tulevski, George S; Sadana, Devendra K

    2012-04-10

    The viability of single-walled carbon nanotubes (SWCNTs) as a transparent conducting electrode on a-Si:H based single junction solar cells was explored. A Schottky barrier formed at a SWCNT/a-Si:H interface was removed by introducing high work function gold nanodots at the SWCNT/a-Si:H interface. This allows comparable device performance from SWCNT-electrode-based a-Si:H solar cells to that obtained by using conventional transparent conducting oxides. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Influnce of exposure with Xe radiation on heterojunction solar cell a-SiC/c-Si studied by impedance spectroscopy

    NASA Astrophysics Data System (ADS)

    Perný, M.; Šály, V.; Packa, J.; Mikolášek, M.; Váry, M.; Huran, J.; Hrubčín, L.; Skuratov, V. A.; Arbet, J.

    2017-04-01

    The photovoltaic efficiency of heterostructures a-SiC/c-Si may be the same or even better in comparison with conventional silicon structures when suitable adjustment of technological parameters is realized. The main advantage of heterojunction formed amorphous SiC thin film and crystalline silicon compared to standard crystalline solar cell lies in high build-in voltage and thus a high open-circuit voltage. Solar cells can be exposed to various influences of hard environment. A deterioration of properties of heterostructures (a-SiC/c-Si) due to irradiation is examined in our paper using impedance spectroscopy method. Xe ions induced damage is reflected in changes of proposed AC equivalent circuit elements. AC equivalent circuit was proposed and verified using numerical simulations. Impedance spectra were also measured at different DC bias voltages due to a more detailed understanding correlation between Xe ions induced damage and transport phenomenon in the heterostructure.

  19. Funneling and guiding effects in ultrathin aSi-H solar cells using one-dimensional dielectric subwavelength gratings

    NASA Astrophysics Data System (ADS)

    Elshorbagy, Mahmoud H.; Alda, Javier

    2017-01-01

    Ultrathin amorphous silicon hydrogenated (aSi-H) solar cells grown on a one-dimensional (1-D) dielectric subwavelength gratings improve the short circuit current by a factor of more than 51% when compared with conventional, flat ultrathin aSi-H devices. This improvement is possible due to several mechanisms. In addition the increase in exposed area caused by the nanostructured surface, a reliable computational electromagnetic evaluation of the interaction of the solar spectrum with the cell structure demonstrates that absorption at the active layer is enhanced and also reflectivity is decreased. In addition, the absorbed power at the nonactive layers is larger, helping to increase the temperature and mitigate the Staebler-Wronski effect. The detailed analysis of the power flux inside the structure has also shown that funneling and guiding mechanism are at play, increasing the optical path within the active layer that produces a better performance of the cell.

  20. Precipitation Sequence of a SiC Particle Reinforced Al-Mg-Si Alloy Composite

    NASA Astrophysics Data System (ADS)

    Shen, Rujuan; Wang, Yihan; Guo, Baisong; Song, Min

    2016-11-01

    In this study, the precipitation sequence of a 5 vol.% SiC particles reinforced Al-1.12 wt.%Mg-0.77 wt.%Si alloy composite fabricated by traditional powder metallurgy method was investigated by transmission electron microscopy and hardness measurements. The results indicated that the addition of SiC reinforcements not only suppresses the initial aging stage but also influences the subsequent precipitates. The precipitation sequence of the composite aged at 175 °C can be described as: Guinier-Preston (G.P.) zone → β″ → β' → B', which was confirmed by high-resolution transmission electron microscopy. This work might provide the guidance for the design and fabrication of hardenable automobile body sheet by Al-based composites with enhanced mechanical properties.

  1. Structural and electronic studies of a-SiGe:H alloys. Final subcontract report, 1 January 1991--28 February 1993

    SciTech Connect

    Paul, W.

    1993-04-01

    This report describes work to produce alloys of a-Si{sub 1-x}Ge{sub x}:H of improved photoelectronic quality by plasma-enhanced chemical vapor deposition (PECVD). The goal was to discover optimum preparation conditions for the end-component, a-Ge:H, to establish whether modification of the usual practice of starting from a-Si:H preparation conditions was advisable. Such modification, found to be necessary, gave films of a-Ge:H with efficiency-mobility-lifetime products ({eta}{mu}{tau}) 10{sup 2} to 10{sup 3} higher than were earlier available, in homogeneous environmentally stable material. Both a-Ge:H and a-Si{sub 1-x}Ge{sub x}:H of large x were studied in detail. Alloy material was shown to have {eta}{mu}{tau} 10{sup 2} larger than found earlier. However, just as the {eta}{mu}{tau} of a-Si:H decreases when Ge is added, so also the {eta}{mu}{tau} of these alloys with Si addition. By contrast, the ambipolar diffusion lengths, L{sub o} which are governed by the hole mobility, vary by only a factor of two over the whole alloy series. Using the experimental finding of a small valence band offset between a-Si:H and a-Ge:H compositional fluctuations on a 10-mm scale are suggested to explain the behavior of {eta}{mu}{tau} and L{sub o} The implications for eventual improvement of the alloys are profound, but require direct experimental tests of the postulated compositional fluctuations.

  2. Low-cycle fatigue properties of a SiC whisker-reinforced 2124 aluminum alloy

    SciTech Connect

    Sasaki, M. ); Lawson, L.; Meshii, M. . Dept. of Materials Science and Engineering)

    1994-10-01

    Low-cycle fatigue microcracking leading to failure of smooth specimens of a powder metallurgy (PM) 2124 aluminum alloy reinforced with 20 vol pct SiC whiskers was studied. The crack size near the onset of unstable growth was inferred to be 50 to 70 [mu]m in the stress amplitude range of the present study (400 to 600 MPa, R = [minus]1) from observations of the fracture surfaces of the specimens. This corresponds to stress intensities between 1/3 to 1/2 typical values of K[sub 1c] or 1/4 to 1/9 the critical length predicted from K[sub 1c] values of 12 to 14 MPa[radical]m. The microcrack size distributions and growth data were obtained from the low-cycle fatigue specimens at various stages of fatigue, using a surface replica technique. During continued cycling, microcracks formed and were lost through linkage with other cracks. At the same time, the fraction of small cracks (< 5 [mu]m) decreased, while that of larger cracks (> 5 [mu]m) increased. The total number of cracks increased with increasing numbers of cycles.

  3. Low-Cycle fatigue properties of a SiC Whisker-reinforced 2124 aluminum alloy

    NASA Astrophysics Data System (ADS)

    Sasaki, M.; Lawson, L.; Meshii, M.

    1994-10-01

    Low-cycle fatigue microcracking leading to failure of smooth specimens of a powder metallurgy (PM) 2124 aluminum alloy reinforced with 20 vol pct SiC whiskers was studied. The crack size near the onset of unstable growth was inferred to be 50 to 70 µm in the stress amplitude range of the present study (400 to 600 MPa, R = -1) from observations of the fracture surfaces of the specimens. This corresponds to stress intensities between 1/3 to 1/2 typical values of K 1c or 1/4 to 1/9 the critical length predicted from K 1c values of 12 to 14 MPa√m. The microcrack size distributions and growth data were obtained from the low-cycle fatigue specimens at various stages of fatigue, using a surface replica technique. During continued cycling, microcracks formed and were lost through linkage with other cracks. At the same time, the fraction of small cracks (<5 µm) decreased, while that of larger cracks (>5 µm) increased. The total number of cracks increased with increasing numbers of cycles. Typical microcrack growth rates were determined to be db/dn = (3.57 to 6.11) × 10-10 (Δ/ K)2.2to2.48 in the lateral direction of the crack, and da/dn = (5.83 to 13.0) × 10-11 (Δ K)1.54 to 1.60 in the depth direction of the crack.

  4. Electrical and optical characteristics of a-Si/P3HT inorganic-organic hybrid heterojunction devices for solar cells

    NASA Astrophysics Data System (ADS)

    Marin, William

    Hybrid inorganic-organic heterojunction devices using n-type amorphous silicon (a-Si(n)) and poly(3-hexylthiophene) (P3HT) layers fabricated by sputter and spin coating techniques, respectively, are investigated for potential cost-effective solar cell device structure. Using a-Si electron transfer and P3HT as electron donor-layer, two devices, ITO/PEDOT/P3HT/a-Si/Ag and ITO/a-Si/P3HT/Ag were studied with the latter showing improved photovoltaic response. Optical, electronic and photo-response properties of the devices were studied. Optical and quantum efficiency data exemplify improved photo-effects in the 450-650 nm wavelength range. I-V characteristics of the devices were diode-like and exhibited photovoltaic responses, yielding VOC of 0.46 V and ISC of 0.08 mA cm-2. Impedance spectroscopy data under forward and reverse biased heterojunctions were analyzed which provided global carrier mobility and diffusion times. Junction capacitance studies enabled evaluation of the built-in junction potential, acceptor concentration and showed the modulation of the space-charge region due to light generated carriers.

  5. a-SiCxNy:H thin films for applications in solar cells as passivation and antireflective coatings

    NASA Astrophysics Data System (ADS)

    Swatowska, Barbara; Kluska, Stanisława; Lewińska, Gabriela; Golańska, Julia; Stapiński, Tomasz

    2016-12-01

    Amorphous a-SiCxNy:H thin films may be an alternative to a-Si:N:H coatings which are commonly used in silicon solar cells. This material was obtained by PECVD (13.56 MHz) method. The reaction gases used: silane, methane, nitrogen and ammonia. The structure of the layers were investigated by scanning electron microscopy (SEM) and infrared spectroscopy (FTIR). IR absorption spectra of a-SiCxNy:H layers confirmed the presence of various hydrogen bonds - it is important for passivation of Si structural defects. The ellipsometric measurements were implemented to determine the thickness of layers d, refractive index n, extinction coefficient k and energy gap Eg. The values of the energy gap of a-SiCxNy:H layers are in the range from 1.89 to 4.34 eV. The correlation between energy gap of materials and refractive index was found. Generally the introduction of N and/or C into the amorphous silicon network rapidly increases the Eg values.

  6. Modelling on c-Si/a-Si:H wire solar cells: some key parameters to optimize the photovoltaic performance

    NASA Astrophysics Data System (ADS)

    Ngo, I.; Gueunier-Farret, M. E.; Alvarez, J.; Kleider, J. P.

    2012-07-01

    Solar cells based on silicon nano- or micro-wires have attracted much attention as a promising path for low cost photovoltaic technology. The key point of this structure is the decoupling of the light absorption from the carriers collection. In order to predict and optimize the performance potential of p- (or n-) doped c-Si/ n-(or p-) doped a-Si:H nanowire-based solar cells, we have used the Silvaco-Atlas software to model a single-wire device. In particular, we have noticed a drastic decrease of the open-circuit voltage (Voc) when increasing the doping density of the silicon core beyond an optimum value. We present here a detailed study of the parameters that can alter the Voc of c-Si(p)/a-Si:H (n) wires according to the doping density in c-Si. A comparison with simulation results obtained on planar c-Si/a-Si:H heterojunctions shows that the drop in Voc, linked to an increase of the dark current in both structures, is more pronounced for radial junctions due to geometric criteria. These numerical modelling results have lead to a better understanding of transport phenomena within the wire.

  7. Mechanical Properties of ZTO, ITO, and a-Si:H Multilayer Films for Flexible Thin Film Solar Cells

    PubMed Central

    Hengst, Claudia; Menzel, Siegfried B; Rane, Gayatri K; Smirnov, Vladimir; Wilken, Karen; Leszczynska, Barbara; Fischer, Dustin; Prager, Nicole

    2017-01-01

    The behavior of bi- and trilayer coating systems for flexible a-Si:H based solar cells consisting of a barrier, an electrode, and an absorption layer is studied under mechanical load. First, the film morphology, stress, Young’s modulus, and crack onset strain (COS) were analyzed for single film coatings of various thickness on polyethylene terephthalate (PET) substrates. In order to demonstrate the role of the microstructure of a single film on the mechanical behavior of the whole multilayer coating, two sets of InSnOx (indium tin oxide, ITO) conductive coatings were prepared. Whereas a characteristic grain–subgrain structure was observed in ITO-1 films, grain growth was suppressed in ITO-2 films. ITO-1 bilayer coatings showed two-step failure under tensile load with cracks propagating along the ITO-1/a-Si:H-interface, whereas channeling cracks in comparable bi- and trilayers based on amorphous ITO-2 run through all constituent layers. A two-step failure is preferable from an application point of view, as it may lead to only a degradation of the performance instead of the ultimate failure of the device. Hence, the results demonstrate the importance of a fine-tuning of film microstructure not only for excellent electrical properties, but also for a high mechanical performance of flexible devices (e.g., a-Si:H based solar cells) during fabrication in a roll-to-roll process or under service. PMID:28772609

  8. Mechanical Properties of ZTO, ITO, and a-Si:H Multilayer Films for Flexible Thin Film Solar Cells.

    PubMed

    Hengst, Claudia; Menzel, Siegfried B; Rane, Gayatri K; Smirnov, Vladimir; Wilken, Karen; Leszczynska, Barbara; Fischer, Dustin; Prager, Nicole

    2017-03-01

    The behavior of bi- and trilayer coating systems for flexible a-Si:H based solar cells consisting of a barrier, an electrode, and an absorption layer is studied under mechanical load. First, the film morphology, stress, Young's modulus, and crack onset strain (COS) were analyzed for single film coatings of various thickness on polyethylene terephthalate (PET) substrates. In order to demonstrate the role of the microstructure of a single film on the mechanical behavior of the whole multilayer coating, two sets of InSnOx (indium tin oxide, ITO) conductive coatings were prepared. Whereas a characteristic grain-subgrain structure was observed in ITO-1 films, grain growth was suppressed in ITO-2 films. ITO-1 bilayer coatings showed two-step failure under tensile load with cracks propagating along the ITO-1/a-Si:H-interface, whereas channeling cracks in comparable bi- and trilayers based on amorphous ITO-2 run through all constituent layers. A two-step failure is preferable from an application point of view, as it may lead to only a degradation of the performance instead of the ultimate failure of the device. Hence, the results demonstrate the importance of a fine-tuning of film microstructure not only for excellent electrical properties, but also for a high mechanical performance of flexible devices (e.g., a-Si:H based solar cells) during fabrication in a roll-to-roll process or under service.

  9. Nanoimprinted backside reflectors for a-Si:H thin-film solar cells: critical role of absorber front textures.

    PubMed

    Tsao, Yao-Chung; Fisker, Christian; Pedersen, Thomas Garm

    2014-05-05

    The development of optimal backside reflectors (BSRs) is crucial for future low cost and high efficiency silicon (Si) thin-film solar cells. In this work, nanostructured polymer substrates with aluminum coatings intended as BSRs were produced by positive and negative nanoimprint lithography (NIL) techniques, and hydrogenated amorphous silicon (a-Si:H) was deposited hereon as absorbing layers. The relationship between optical properties and geometry of front textures was studied by combining experimental reflectance spectra and theoretical simulations. It was found that a significant height variation on front textures plays a critical role for light-trapping enhancement in solar cell applications. As a part of sample preparation, a transfer NIL process was developed to overcome the problem of low heat deflection temperature of polymer substrates during solar cell fabrication.

  10. Microscopic origins of metastable effects in a-Si:H and deep defect characterization in a-Si,Ge:H alloys. Annual subcontract report, 1 February 1992--31 January 1993

    SciTech Connect

    Cohen, J.D.

    1993-08-01

    This report describes work to evaluate low-mobility-gap a-Si,Ge:H alloy films. Results are based on junction capacitance techniques of admittance spectroscopy, transient photocapacitance (and photocurrent), and drive-level capacitance profiling. Eight a-Si,Ge:H alloy samples grown by photo-CVD encompassed the range of optical gaps from 1.3 to 1.6 eV, and corresponding Ge fractions from about 20 to 60 at%. We employed junction capacitance techniques to determine deep defect energies and densities, Urbach band-tail energies, and {mu}{tau} products for holes. Electron microprobe analysis provided accurate Ge fractions for our samples, thus enabling us to establish clear trends in measured electronic properties vs Ge fraction. We concluded that these photo-CVD samples exhibited equal or superior properties in terms of band-tail widths, and stable defect densities compared to any reported results on a-Si,Ge:H samples grown by glow discharge. By assigning defect energy levels from analysis of transient subband-gap photocapacitance and photocurrent spectra, we found clear evidence for two distinct defect subbands, one at roughly midgap and the other in the upper half of the gap. The trapping lifetime related {mu}{tau} products for holes decreased in direct proportion to the density of mid-gap defects in these samples. This appears to be the case regardless of whether we are dealing with stable defects or defects created by light-soaking.

  11. Microscopic origins of metastable effects in a-Si:H and deep defect characterization in a-Si,Ge:H alloys. Final subcontract report, February 1, 1991--January 31, 1994

    SciTech Connect

    Cohen, J.D.

    1994-09-01

    This research supported by NREL Subcontract XG-1-10063-1 over the past three years has involved, first of all, a fairly complete characterization of a two series of a-Si{sub 1-x}Ge{sub x}:H samples: a series of 9 films grown at the University of Delaware by the photo-CVD method (for 0.29 {<=} {times} {<=} 0.62) and series of 6 films grown at U.S.S.C. by the glow discharge method (for 0.20 {<=} {times} {<=} 0.50). Both these series of samples seem to represent what is close to the {open_quotes}state-of-the-art{close_quotes} in current a-Si,Ge:H alloys. The authors detailed comparison of the properties of the glow discharge material with the photo-CVD samples show remarkable similarities rather than significant differences. In particular, measurements of these samples: (1) allowed the assignment of defect energy levels from a detailed analysis of transient sub-band-gap photocapacitance and photocurrent spectra. (2) The authors found the density of deep defects to increase exponentially with the germanium content. (3) The authors found that the trapping lifetimes related {mu}{tau} products for holes decrease in direct proportion to the density of midgap defects in these samples, at least up to Ge fractions of 50at.%. (4) The authors have also made significant progress toward identifying both the optical and thermal defect transitions in the a-Si,Ge:H alloys.

  12. Enhanced carrier extraction of a-Si/c-Si solar cells by nanopillar-induced optical modulation.

    PubMed

    Zeng, Yang; Liu, Hong; Ye, Qinghao; Shen, Wenzhong

    2014-04-04

    We demonstrate improved short-wavelength internal quantum efficiency (IQE) of a-Si/c-Si heterojunction (HJ) solar cells with a surface nanopillar (NP) array via simulation. The gain in IQE is attributed to the light-field modulation caused by the cavity resonance inside the NPs, in which the light energy is effectively localized within the c-Si bulk rather than the a-Si layer. The average IQE in the short-wavelength range (330-450 nm) is enhanced from 43.94% to 62.88% by the optimal NP array, with a maximum IQE of 80.98% at λ = 400 nm. The resulting current gain is over 38.25% compared to a planar HJ cell in this wavelength range, showing a well suppressed recombination-induced current loss. This light-management scheme may also find applications in other types of cells.

  13. Exploration of nano-element array architectures for substrate solar cells using an a-Si:H absorber

    NASA Astrophysics Data System (ADS)

    Jun Nam, Wook; Ji, Liming; Varadan, Vasundara V.; Fonash, Stephen J.

    2012-06-01

    Architectures involving Ag and transparent conducting oxide (TCO) nano-element arrays for light and photocarrier collection management in substrate solar cells are numerically explored and compared. Some architectures with TCO nano-elements are shown to perform better than the best reported Ag arrays and (1) increase JSC at least 57% over that of a planar 200 nm a-Si:H control, (2) attain absorber utilization <7 mg/W, and (3) have only 224 nm as the longest collection length. Photonic effects are the cause of the light trapping enhancement in these devices. While the computations were done for a-Si:H, the insight provided is equally applicable to other absorbers.

  14. Absorption enhancement in thin film a-Si solar cells with double-sided SiO2 particle layers

    NASA Astrophysics Data System (ADS)

    Chen, Le; Wang, Qing-Kang; Shen, Xiang-Qian; Chen, Wen; Huang, Kun; Liu, Dai-Ming

    2015-10-01

    Light absorption enhancement is very important for improving the power conversion efficiency of a thin film a-Si solar cell. In this paper, a thin-film a-Si solar cell model with double-sided SiO2 particle layers is designed, and then the underlying mechanism of absorption enhancement is investigated by finite difference time domain (FDTD) simulation; finally the feasible experimental scheme for preparing the SiO2 particle layer is discussed. It is found that the top and bottom SiO2 particle layers play an important role in anti-reflection and light trapping, respectively. The light absorption of the cell with double-sided SiO2 layers greatly increases in a wavelength range of 300 nm-800 nm, and the ultimate efficiency increases more than 22% compared with that of the flat device. The cell model with double-sided SiO2 particle layers reported here can be used in varieties of thin film solar cells to further improve their performances. Project supported by the National High-Tech Research and Development Program of China (Grant No. 2011AA050518), the University Research Program of Guangxi Education Department, China (Grant No. LX2014288), and the Natural Science Foundation of Guangxi Zhuang Autonomous Region, China (Grant No. 2013GXNSBA019014).

  15. Hydrogenated amorphous silicon oxide (a-SiOx:H) single junction solar cell with 8.8% initial efficiency by reducing parasitic absorptions

    NASA Astrophysics Data System (ADS)

    Kim, Do Yun; Guijt, Erwin; van Swaaij, René A. C. M. M.; Zeman, Miro

    2017-04-01

    Hydrogenated amorphous silicon oxide (a-SiOx:H) solar cells have been successfully implemented to multi-junction thin film silicon solar cells. The efficiency of these solar cells, however, has still been below that of state-of-the-art solar cells mainly due to the low Jsc of the a-SiOx:H solar cells and the unbalanced current matching between sub-cells. In this study, we carry out optical simulations to find the main optical losses for the a-SiOx:H solar cell, which so far was mainly optimized for Voc and fill-factor (FF). It is observed that a large portion of the incident light is absorbed parasitically by the p-a-SiOx:H and n-a-SiOx:H layers, although the use of these layers leads to the highest Voc × FF product. When a more transparent and conductive p-nc-SiOx:H layer is substituted for the p-a-SiOx:H layer, the parasitic absorption loss at short wavelengths is notably reduced, leading to higher Jsc. However, this gain in Jsc by the use of the p-nc-SiOx:H compromises the Voc. When replacing the n-a-SiOx:H layer for an n-nc-SiOx:H layer that has low n and k values, the plasmonic absorption loss at the n-nc-SiOx:H/Ag interfaces and the parasitic absorption in the n-nc-SiOx:H are substantially reduced. Implementation of this n-nc-SiOx:H leads to an increase of the Jsc without a drop of the Voc and FF. When implementing a thinner p-a-SiOx:H layer, a thicker i-a-SiOx:H layer, and an n-nc-SiOx:H layer, a-SiOx:H solar cells with not only high Jsc but also high Voc and FF can be fabricated. As a result, an 8.8% a-SiOx:H single junction solar cell is successfully fabricated with a Voc of 1.02 V, a FF of 0.70, and a Jsc of 12.3 mA/cm2, which is the highest efficiency ever reported for this type of solar cell.

  16. Incorporation of a light and carrier collection management nano-element array into superstrate a-Si:H solar cells

    NASA Astrophysics Data System (ADS)

    Jun Nam, Wook; Ji, Liming; Benanti, Travis L.; Varadan, Vasundara V.; Wagner, Sigurd; Wang, Qi; Nemeth, William; Neidich, Douglas; Fonash, Stephen J.

    2011-08-01

    Superstrate a-Si:H solar cells incorporating a nano-column array for light and photocarrier collection have been fabricated and evaluated. It is found that the short circuit current density (JSC) is significantly increased while the open circuit voltage and fill factor are not detrimentally affected by this architecture. Numerical analysis of JSC matches experiment and shows that the enhanced JSC observed is due to both effective absorber thickness and photonic-plasmonic effects. Further analysis shows that this nano-column architecture can lead to a 42% increase in conversion efficiency over that of the planar control for a 200 nm absorber thickness cell.

  17. High-Rate Fabrication of a-Si-Based Thin-Film Solar Cells Using Large-Area VHF PECVD Processes

    SciTech Connect

    Deng, Xunming; Fan, Qi Hua

    2011-12-31

    The University of Toledo (UT), working in concert with it’s a-Si-based PV industry partner Xunlight Corporation (Xunlight), has conducted a comprehensive study to develop a large-area (3ft x 3ft) VHF PECVD system for high rate uniform fabrication of silicon absorber layers, and the large-area VHF PECVD processes to achieve high performance a-Si/a-SiGe or a-Si/nc-Si tandem junction solar cells during the period of July 1, 2008 to Dec. 31, 2011, under DOE Award No. DE-FG36-08GO18073. The project had two primary goals: (i) to develop and improve a large area (3 ft × 3 ft) VHF PECVD system for high rate fabrication of > = 8 Å/s a-Si and >= 20 Å/s nc-Si or 4 Å/s a-SiGe absorber layers with high uniformity in film thicknesses and in material structures. (ii) to develop and optimize the large-area VHF PECVD processes to achieve high-performance a-Si/nc-Si or a-Si/a-SiGe tandem-junction solar cells with >= 10% stable efficiency. Our work has met the goals and is summarized in “Accomplishments versus goals and objectives”.

  18. Research on the stability, electronic properties, and structure of a-Si:H and its alloys. Annual subcontract report, 1 June 1991--31 May 1992

    SciTech Connect

    Street, R.A.; Jackson, W.B.; Johnson, N.; Nebel, C.; Hack, M.; Santos, P.; Thompson, R.; Tsai, C.C.; Walker, J.

    1992-12-01

    Objective is to obtain a comprehensive understanding of structure and electronic properties of a-Si:H as they apply to solar cells. First observations were of light enhancement and field suppression of H diffusion in a-Si:H. Theoretical studies were made of hydrogen density of states distribution and its relation to defect metastability. Reduced density of light induced defect is observed in a-Si:H deposited in a remote hydrogen plasma reactor at 400 C. Kinetics of metastable defect creation using forward bias in a p-i-n diode to induce defects were studied and compared to light-induced defect creation in the same devices. Studies were made of transport at high electric field and low temperature. Detailed studies were made of kinetics of dopant metastability in n-type and p-type a-Si:H.

  19. In vitro evaluation of diamond-like carbon coatings with a Si/SiC x interlayer on surgical NiTi alloy

    NASA Astrophysics Data System (ADS)

    Liu, C. L.; Chu, Paul K.; Yang, D. Z.

    2007-04-01

    Diamond-like carbon (DLC) coatings were produced with a Si/SiCx interlayer by a hybrid plasma immersion ion implantation and deposition process to improve the adhesion between the carbon layer and surgical NiTi alloy substrate. The structure, mechanical properties, corrosion resistance and biocompatibility of the coatings were evaluated in vitro by Raman spectroscopy, pin-on-disk tests, potentiodynamic polarization tests and simulated fluid immersion tests. The DLC coatings with a Si/SiCx interlayer of a suitable thickness have better adhesion, lower friction coefficients and enhanced corrosion resistance. In the simulated body fluid tests, the coatings exhibit effective corrosion protection and good biocompatibility as indicated by PC12 cell cultures. DLC films fabricated on a Si/SiCx interlayer have high potential as protective coatings for biomedical NiTi materials.

  20. Low temperature pulsed electrically detected magnetic resonance on a-Si:H p-i-n solar cells

    NASA Astrophysics Data System (ADS)

    Herring, Thomas; Seipel, Heather; McCamey, Dane; Boehme, Christoph; Taylor, Craig; Hu, Jian; Zhu, Feng; Madan, Arun

    2008-03-01

    Hydrogenated amorphous silicon (a-Si:H) has become one of the most important semiconductor materials, with applications including solar cells and thin film transistors. In spite of this, and more than 30 years of intensive studies of this material, the microscopic nature of various recombination mechanisms in this material are still not well understood. Recently, pulsed electrically and optically detected magnetic resonance (p-EDMR, p-ODMR, respectively) spectroscopy has provided a method for directly and quantitatively observing some of these microscopic processes. Here, we present p-EDMR measurements on a-Si:H p-i-n solar cells at temperatures T <= 40K, with a comparatively low light excitation density. After a short, coherent microwave excitation, we record transients for a range of externally applied magnetic fields. The results show the presence of a number of resonances, which we discuss with regard to previous continuous wave (cw-) ESR and cw-EDMR studies, as well as cw- and p-ODMR measurements.

  1. ZnO/a-Si distributed Bragg reflectors for light trapping in thin film solar cells from visible to infrared range

    NASA Astrophysics Data System (ADS)

    Chen, Aqing; Yuan, Qianmin; Zhu, Kaigui

    2016-01-01

    Distributed Bragg reflectors (DBRs) consisting of ZnO and amorphous silicon (a-Si) were prepared by magnetron sputtering method for selective light trapping. The quarter-wavelength ZnO/a-Si DBRs with only 6 periods exhibit a peak reflectance of above 99% and have a full width at half maximum that is greater than 347 nm in the range of visible to infrared. The 6-pair reversed quarter-wavelength ZnO/a-Si DBRs also have a peak reflectance of 98%. Combination of the two ZnO/a-Si DBRs leads to a broader stopband from 686 nm to 1354 nm. Using the ZnO/a-Si DBRs as the rear reflector of a-Si thin film solar cells significantly increases the photocurrent in the spectrum range of 400⿿1000 nm, in comparison with that of the cells with Al reflector. The obtained results suggest that ZnO/a-Si DBRs are promising reflectors of a-Si thin-film solar cells for light trapping.

  2. Underdense a-Si:H film capped by a dense film as the passivation layer of a silicon heterojunction solar cell

    NASA Astrophysics Data System (ADS)

    Liu, Wenzhu; Zhang, Liping; Chen, Renfang; Meng, Fanying; Guo, Wanwu; Bao, Jian; Liu, Zhengxin

    2016-11-01

    Underdense hydrogenated amorphous silicon (a-Si:H) prepared by plasma-enhanced chemical vapor deposition was used as a passivation layer in silicon heterojunction (SHJ) solar cells. By reducing the thickness of the underdense a-Si:H passivation layer from 15 nm to 5 nm, the open circuit voltage (Voc) of the corresponding SHJ solar cell increased significantly from 724.3 mV to 738.6 mV. For comparison, a widely used transition-zone a-Si:H passivation layer was also examined, but reducing its thickness from 15 nm to 5 nm resulted in a continuous Voc reduction, from 724.1 mV to 704.3 mV. The highest efficiency was achieved using a 5-nm-thick underdense a-Si:H passivation layer. We propose that this advantageous property of underdense a-Si:H reflects its microstructural characteristics. While the porosity of a-Si:H layer enables H penetration into the amorphous network and the a-Si:H/c-Si interface, a high degree of disorder inhibits the formation of the epitaxial layer at the a-Si:H/c-Si interface during post-doping layer deposition.

  3. Highly Mismatched Alloys for Intermediate Band Solar Cells

    SciTech Connect

    Walukiewicz, W.; Yu, K.M.; Wu, J.; Ager III, J.W.; Shan, W.; Scrapulla, M.A.; Dubon, O.D.; Becla, P.

    2005-03-21

    It has long been recognized that the introduction of a narrow band of states in a semiconductor band gap could be used to achieve improved power conversion efficiency in semiconductor-based solar cells. The intermediate band would serve as a ''stepping stone'' for photons of different energy to excite electrons from the valence to the conduction band. An important advantage of this design is that it requires formation of only a single p-n junction, which is a crucial simplification in comparison to multijunction solar cells. A detailed balance analysis predicts a limiting efficiency of more than 50% for an optimized, single intermediate band solar cell. This is higher than the efficiency of an optimized two junction solar cell. Using ion beam implantation and pulsed laser melting we have synthesized Zn{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys with x<0.03. These highly mismatched alloys have a unique electronic structure with a narrow oxygen-derived intermediate band. The width and the location of the band is described by the Band Anticrossing model and can be varied by controlling the oxygen content. This provides a unique opportunity to optimize the absorption of solar photons for best solar cell performance. We have carried out systematic studies of the effects of the intermediate band on the optical and electrical properties of Zn{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys. We observe an extension of the photovoltaic response towards lower photon energies, which is a clear indication of optical transitions from the valence to the intermediate band.

  4. Transition Metal Oxide Alloys as Potential Solar Energy Conversion Materials

    SciTech Connect

    Toroker, Maytal; Carter, Emily A.

    2013-02-21

    First-row transition metal oxides (TMOs) are inexpensive potentia alternative materials for solar energy conversion devices. However, some TMOs, such as manganese(II) oxide, have band gaps that are too large for efficiently absorbing solar energy. Other TMOs, such as iron(II) oxide, have conduction and valence band edges with the same orbital character that may lead to unfavorably high electron–hole recombination rates. Another limitation of iron(II) oxide is that the calculated valence band edge is not positioned well for oxidizing water. We predict that key properties, including band gaps, band edge positions, and possibly electron–hole recombination rates, may be improved by alloying TMOs that have different band alignments. A new metric, the band gap center offset, is introduced for simple screening of potential parent materials. The concept is illustrated by calculating the electronic structure of binary oxide alloys that contain manganese, nickel, iron, zinc, and/or magnesium, within density functional theory (DFT)+U and hybrid DFT theories. We conclude that alloys of iron(II) oxide are worth evaluating further as solar energy conversion materials.

  5. Microscopic origins of metastable effects in a-Si:H and deep defect characterization in a-Si,Ge:H alloys. Annual subcontract report, 1 February 1991--31 January 1992

    SciTech Connect

    Cohen, J.D.

    1992-07-01

    This report describes works to use transient photocapacitance and photocurrent measurements to determine the deep defect distribution and processes in low-band-gap a-Si,Ge:H alloys. Samples for these studies were produced by the photochemical vapor deposition (photo-CVD) growth method and were obtained through a collaboration with researchers at the University of Delaware. This report discusses how a detailed comparison between the photocapacitance and photocurrent spectra can be used to separately examine the majority and minority carrier processes. The results are as follows: (1) The midgap defect densities in the alloy regime near 1.3 eV can be as low as 5 {times} 10{sup 16} cm{sup {minus}3} in such photo-CVD samples. (2) There exists a second defect band roughly 0.4 eV below E{sub c} of a similar magnitude to the midgap defect density that exhibits significant lattice relaxation behavior in its electron trapping dynamics. (3) The hole {mu}{tau} products determined for the lowest defect sample are roughly 5 {times} 10{sup {minus}10} cm{sup 2}/V, comparable with the highest hole {mu}{tau} products reported in sandwich geometry measurements for alloys in this composition range. (4) The hole {mu}{tau} is found to be roughly inversely proportional to the midgap defect density for the samples studied. This is consistent with the fact that the effective minority carrier lifetime for such measurements is limited by the deep state trapping time.

  6. Improvement of a Si solar cell efficiency using pure and Fe3+ doped PVA films

    NASA Astrophysics Data System (ADS)

    Khalifa, N.; Kaouach, H.; Chtourou, R.

    2015-07-01

    One of the most important key driving the economic viability of solar cells is the high efficiency. This research focuses on the enhancement of commercial Si solar cell performance by deposing a pure and Fe3+ doped polyvinyl alcohol (PVA) layer on the top of the Si wafer of the considered cells. The use of such polymer to improve solar cells efficiency is actually a first. The authors will rely on the optical characteristics of the pure and doped PVA films including absorption and emission properties to justify the effect on Si cells. Commercial monocrystalline silicon solar cells of 15 cm2 (0.49 V/460 mA) are used in this work. Films of almost 80 μm of the ferric polymer are deposed on the cells. Films with the same thickness are characterized by UV-Vis spectroscopy and photoluminescent emission of the films is then investigated. The electrical properties of the cells with and without the organometallic layer are evaluated. It will be deduced an important improvement of all electrical parameters, including short-circuit current, open-circuit voltage, fill factor and spatially the conversion efficiency by almost 3%.

  7. Manipulating hybrid structures of polymer/a-Si for thin film solar cells

    NASA Astrophysics Data System (ADS)

    Peng, Ying; He, Zhiqun; Diyaf, Adel; Ivaturi, Aruna; Zhang, Zhi; Liang, Chunjun; Wilson, John I. B.

    2014-03-01

    A series of uniform polymer/amorphous silicon hybrid structures have been fabricated by means of solution-casting for polymer and radio frequency excited plasma enhanced chemical vapour deposition for amorphous silicon (a-Si:H). Poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) functioned as a photoactive donor, while the silicon layer acted as an acceptor. It is found that matching the hole mobility of the polymer to the electron mobility of amorphous silicon is critical to improve the photovoltaic performance from hybrid cells. A three-layer p-i-n structure of ITO/PEDOT:PSS(200 nm)/i-Si(450 nm)/n-Si(200 nm)/Al with a power conversion efficiency of 4.78% under a standard test condition was achieved.

  8. Manipulating hybrid structures of polymer/a-Si for thin film solar cells

    SciTech Connect

    Peng, Ying; He, Zhiqun E-mail: J.I.B.Wilson@hw.ac.uk; Zhang, Zhi; Liang, Chunjun; Diyaf, Adel; Ivaturi, Aruna; Wilson, John I. B. E-mail: J.I.B.Wilson@hw.ac.uk

    2014-03-10

    A series of uniform polymer/amorphous silicon hybrid structures have been fabricated by means of solution-casting for polymer and radio frequency excited plasma enhanced chemical vapour deposition for amorphous silicon (a-Si:H). Poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) functioned as a photoactive donor, while the silicon layer acted as an acceptor. It is found that matching the hole mobility of the polymer to the electron mobility of amorphous silicon is critical to improve the photovoltaic performance from hybrid cells. A three-layer p-i-n structure of ITO/PEDOT:PSS(200 nm)/i-Si(450 nm)/n-Si(200 nm)/Al with a power conversion efficiency of 4.78% under a standard test condition was achieved.

  9. A shape memory alloy actuator for solar array deployments

    NASA Astrophysics Data System (ADS)

    Barbet, Vincent; D'Abrigeon, Laurent; Champandard, Fabrice; Jacopini, Cedric

    2005-07-01

    The interest in the development of low-cost, reliable, lightweight actuators is high. The implementation of Shape Memory Alloy (SMA) actuator technologies, such as torsion mechanism is also required. SMA technologies are lighter more simple and more robust than current mechanical actuators. A SMA actuator might allow a significant reduction in the space mechanisms and overall system costs and mass for standard LEO missions as well as for medium and large GEO missions. SMA rod is made from Nickel Titanium alloy with high austenitic transition temperature. The unique behavior of NiTi alloy is based on the temperature-dependent austenite-to-martensite phase transformation on an atomic scale, which is also called thermoelastic martensitic transformation. The thermoelastic martensitic transformation causing the shape recovery is a result of the need of the crystal lattice structure to accommodate to the minimum energy state for a given temperature. NiTi alloy senses a change in ambient temperature and is able to convert its shape to a preprogrammed structure. In the first step, Alcatel Space analysed new mechanical electrical and thermal design for lightweight solar arrays application to fully benefit of the favourable reliability/mass of SMA actuator mechanisms. Alcatel Space has an excellent heritage in shape memory alloy mechanisms for scientific missions. Flight operation was successful. This activity aims at identifying, developing, and characterising a simple, reliable and low mass mechanism. The development and qualification activities of SMA actuator is realised in the frame work of mechanisms improvement studies for lightweight solar array development. The SMA Actuator is used to motorize and speed regulate the deployment of the solar array at root hinge level. The SMA Actuator is then submitted to motorization torques from Solar Array hinge line or resisting torque from Solar Array hinge line. Alcatel Space organised the program of work according to the

  10. Development of wider bandgap n-type a-SiOx:H and μc-SiOx:H as both doped and intermediate reflecting layer for a-Si:H/ a-Si1-xGex:H tandem solar cells

    NASA Astrophysics Data System (ADS)

    Chen, Po-Wei; Chen, Pei-Ling; Tsai, Chuang-Chuang

    2016-07-01

    In this work, we developed a-SiOx:H(n) and μc-SiOx:H(n) films as n-type layer, intermediate reflecting layer (IRL), and back-reflecting layer (BRL) to improve the light management in silicon thin-film solar cells. In the development of SiOx:H films, by properly adjusting the oxygen content of the films, the optical bandgap of μc-SiOx:H(n) can be increased while maintaining sufficient conductivity. Similar effect was found for a-SiOx:H(n). In a-Si:H single-junction cells, employing a-SiOx:H(n) as the replacement for a-Si:H(n) resulted in a relative efficiency enhancement of 11.4% due to the reduced parasitic absorption loss. We have also found that μc-SiOx:H(n) can replace back ITO layer as BRL, leading to a relative efficiency gain of 7.6%. For a-Si:H/ a-Si1- x Ge x:H tandem cell, employing μc-SiOx:H(n) as IRL increased the current density of top cell. In addition, employing a-SiOx:H(n) as a replacement of a-Si:H(n) in the top cell increased the current density of bottom cell due to the reduction of absorption loss. Combining all the improvements, the a-Si:H/ a-Si1-xGex:H tandem cell with efficiency of 9.2%, V OC = 1.58 V, J SC = 8.43 mA/cm2, and FF = 68.4% was obtained. [Figure not available: see fulltext.

  11. Hump-shaped internal collection efficiency of degraded a-Si:H {ital p-i-n} solar cells

    SciTech Connect

    Smole, F.; Topic, M.; Furlan, J.; Kusian, W.

    1997-07-01

    Measured internal collection efficiency (ICE) characteristics of annealed and degraded a-Si:H p-i-n solar cells were used for an analysis of their internal behavior. Using the numerical simulator ASPIN, simulations were performed in order to fit and explain pronounced hump-shaped voltage-dependent ICE characteristics of degraded structures under weak short-wavelength illumination. Agreement with measured ICE characteristics for a degraded cell was obtained only if in addition to the introduction of light-induced dangling bond defect states, their capture cross sections were also increased, in particular the capture cross section for the charged defect states were increased. This caused a change in the occupancy of defect states at the p-i interface and front part of the i layer under forward biases. Consequently, the electric field in the front part of the cell was sustained under higher forward biases, resulting in recovery of the ICE. {copyright} {ital 1997 American Institute of Physics.}

  12. Shape Control of Solar Collectors Using Shape Memory Alloy Actuators

    NASA Technical Reports Server (NTRS)

    Lobitz, D. W.; Grossman, J. W.; Allen, J. J.; Rice, T. M.; Liang, C.; Davidson, F. M.

    1996-01-01

    Solar collectors that are focused on a central receiver are designed with a mechanism for defocusing the collector or disabling it by turning it out of the path of the sun's rays. This is required to avoid damaging the receiver during periods of inoperability. In either of these two cases a fail-safe operation is very desirable where during power outages the collector passively goes to its defocused or deactivated state. This paper is principally concerned with focusing and defocusing the collector in a fail-safe manner using shape memory alloy actuators. Shape memory alloys are well suited to this application in that once calibrated the actuators can be operated in an on/off mode using a minimal amount of electric power. Also, in contrast to other smart materials that were investigated for this application, shape memory alloys are capable of providing enough stroke at the appropriate force levels to focus the collector. Design and analysis details presented, along with comparisons to test data taken from an actual prototype, demonstrate that the collector can be repeatedly focused and defocused within accuracies required by typical solar energy systems. In this paper the design, analysis and testing of a solar collector which is deformed into its desired shape by shape memory alloy actuators is presented. Computations indicate collector shapes much closer to spherical and with smaller focal lengths can be achieved by moving the actuators inward to a radius of approximately 6 inches. This would require actuators with considerably more stroke and some alternate SMA actuators are currently under consideration. Whatever SMA actuator is finally chosen for this application, repeatability and fatigue tests will be required to investigate the long term performance of the actuator.

  13. Shape Control of Solar Collectors Using Shape Memory Alloy Actuators

    NASA Technical Reports Server (NTRS)

    Lobitz, D. W.; Grossman, J. W.; Allen, J. J.; Rice, T. M.; Liang, C.; Davidson, F. M.

    1996-01-01

    Solar collectors that are focused on a central receiver are designed with a mechanism for defocusing the collector or disabling it by turning it out of the path of the sun's rays. This is required to avoid damaging the receiver during periods of inoperability. In either of these two cases a fail-safe operation is very desirable where during power outages the collector passively goes to its defocused or deactivated state. This paper is principally concerned with focusing and defocusing the collector in a fail-safe manner using shape memory alloy actuators. Shape memory alloys are well suited to this application in that once calibrated the actuators can be operated in an on/off mode using a minimal amount of electric power. Also, in contrast to other smart materials that were investigated for this application, shape memory alloys are capable of providing enough stroke at the appropriate force levels to focus the collector. Design and analysis details presented, along with comparisons to test data taken from an actual prototype, demonstrate that the collector can be repeatedly focused and defocused within accuracies required by typical solar energy systems. In this paper the design, analysis and testing of a solar collector which is deformed into its desired shape by shape memory alloy actuators is presented. Computations indicate collector shapes much closer to spherical and with smaller focal lengths can be achieved by moving the actuators inward to a radius of approximately 6 inches. This would require actuators with considerably more stroke and some alternate SMA actuators are currently under consideration. Whatever SMA actuator is finally chosen for this application, repeatability and fatigue tests will be required to investigate the long term performance of the actuator.

  14. Influence of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi{sub 2}/n-Si heterojunction solar cells

    SciTech Connect

    Takabe, Ryota; Yachi, Suguru; Tsukahara, Daichi; Takeuchi, Hiroki; Toko, Kaoru; Suemasu, Takashi; Du, Weijie

    2016-08-15

    Fabrication of p-BaSi{sub 2}(20 nm)/n-Si heterojunction solar cells was performed with different a-Si capping layer thicknesses (d{sub a-Si}) and varying air exposure durations (t{sub air}) prior to the formation of a 70-nm-thick indium-tin-oxide electrode. The conversion efficiencies (η) reached approximately 4.7% regardless of t{sub air} (varying from 12–150 h) for solar cells with d{sub a-Si} = 5 nm. In contrast, η increased from 5.3 to 6.6% with increasing t{sub air} for those with d{sub a-Si} = 2 nm, in contrast to our prediction. For this sample, the reverse saturation current density (J{sub 0}) and diode ideality factor decreased with t{sub air}, resulting in the enhancement of η. The effects of the variation of d{sub a-Si} (0.7, 2, 3, and 5 nm) upon the solar cell performance were examined while keeping t{sub air} = 150 h. The η reached a maximum of 9.0% when d{sub a-Si} was 3 nm, wherein the open-circuit voltage and fill factor also reached a maximum. The series resistance, shunt resistance, and J{sub 0} exhibited a tendency to decrease as d{sub a-Si} increased. These results demonstrate that a moderate oxidation of BaSi{sub 2} is a very effective means to enhance the η of BaSi{sub 2} solar cells.

  15. Theoretical maximum performance evaluation of third generation silicon solar cell consisting of nc-Si:H/a-Si:H quantum wells

    NASA Astrophysics Data System (ADS)

    Tripathi, Brijesh; Sircar, Ratna

    2016-09-01

    The maximum performance of nc-Si:H/a-Si:H quantum well solar cell is theoretically evaluated by studying the spectral absorption of incident radiation with respect to the number of inserted nc-Si:H quantum well layers. Fundamental intrinsic properties of a-Si:H and nc-Si:H materials reported in literature have been used to evaluate the performance parameters. Enhanced spectral absorption is recorded due to insertion of nc-Si:H quantum well layers in the intrinsic region of a-Si:H solar cell. By inserting 50 QW layers of nc-Si:H in the intrinsic region of the a-Si:H solar cell, the short-circuit current density (JSC) increases by ∼100% as compared to the baseline whereas the open-circuit voltage (VOC) decreases by ∼38%. The decrease in VOC is explained on the basis of quasi-Fermi level separation under the illuminated state of solar cell. Theoretical maximum efficiency, having the combined effect of the increase in JSC and decrease in VOC, has increased by ∼24% in comparison with the baseline due to the use of QW as calculated using ideal carrier lifetime value. With a realistic carrier lifetime of the state-of-the-art a-Si:H solar cells, the addition of QWs do not yield any significant gain. From this study, it is concluded that a high carrier lifetime is required to gain a noteworthy benefit from the nc-Si:H/a-Si:H QWs.

  16. Interface modification effect between p-type a-SiC:H and ZnO:Al in p-i-n amorphous silicon solar cells.

    PubMed

    Baek, Seungsin; Lee, Jeong Chul; Lee, Youn-Jung; Iftiquar, Sk Md; Kim, Youngkuk; Park, Jinjoo; Yi, Junsin

    2012-01-18

    Aluminum-doped zinc oxide (ZnO:Al) [AZO] is a good candidate to be used as a transparent conducting oxide [TCO]. For solar cells having a hydrogenated amorphous silicon carbide [a-SiC:H] or hydrogenated amorphous silicon [a-Si:H] window layer, the use of the AZO as TCO results in a deterioration of fill factor [FF], so fluorine-doped tin oxide (Sn02:F) [FTO] is usually preferred as a TCO. In this study, interface engineering is carried out at the AZO and p-type a-SiC:H interface to obtain a better solar cell performance without loss in the FF. The abrupt potential barrier at the interface of AZO and p-type a-SiC:H is made gradual by inserting a buffer layer. A few-nanometer-thick nanocrystalline silicon buffer layer between the AZO and a-SiC:H enhances the FF from 67% to 73% and the efficiency from 7.30% to 8.18%. Further improvements in the solar cell performance are expected through optimization of cell structures and doping levels.

  17. Interface modification effect between p-type a-SiC:H and ZnO:Al in p-i-n amorphous silicon solar cells

    PubMed Central

    2012-01-01

    Aluminum-doped zinc oxide (ZnO:Al) [AZO] is a good candidate to be used as a transparent conducting oxide [TCO]. For solar cells having a hydrogenated amorphous silicon carbide [a-SiC:H] or hydrogenated amorphous silicon [a-Si:H] window layer, the use of the AZO as TCO results in a deterioration of fill factor [FF], so fluorine-doped tin oxide (Sn02:F) [FTO] is usually preferred as a TCO. In this study, interface engineering is carried out at the AZO and p-type a-SiC:H interface to obtain a better solar cell performance without loss in the FF. The abrupt potential barrier at the interface of AZO and p-type a-SiC:H is made gradual by inserting a buffer layer. A few-nanometer-thick nanocrystalline silicon buffer layer between the AZO and a-SiC:H enhances the FF from 67% to 73% and the efficiency from 7.30% to 8.18%. Further improvements in the solar cell performance are expected through optimization of cell structures and doping levels. PMID:22257671

  18. Optical and Electrical Characteristics of Hybrid ZnO Nanowire/a-Si:H Solar Cells on Flexible Substrates under Mechanical Bending.

    PubMed

    Pathirane, Minoli K; Wong, William S

    2016-05-01

    Disordered 3-D hybrid ZnO nanowire/a-Si:H thin-film radial-junction solar cells are directly fabricated onto flexible substrates. A 41% reduction in optical reflectivity resulted in a 15% increase in the current density when the substrate is mechanically bent concave-up toward the incoming light. The light scattering of the nanowire devices was enhanced by decreasing the spacing between the nanowire solar cell by bending the substrate.

  19. Enhanced surface recombination in a-Si:H solar cells caused by light stress

    NASA Astrophysics Data System (ADS)

    Kusian, W.; Pfleiderer, H.

    1991-08-01

    The change of the spectral photocurrent characteristics of amorphous silicon pin solar cells with light induced degradation is compared with the effect of slightly doping the ``i-layer''. Both treatments yield similar results. Light stress lets the primary photocurrent, measured with blue light, decrease and the secondary photocurrent, measured with red light, increased. The similar change occurs when a slight n-doping of the ``i-layer'' is replaced by a slight p-doping. A simple interpretation in terms of unfirom fields and preponderant surface recombination is possible and will be outlined. We additionally resort to numerical similations. Degradation is to be simulated by the introduction of stronger recombination. The crombination rate will be distributed in space. We indeed find that enhanced surface recombination plays the key role in guiding the simulation towards our experiment.

  20. Transition metal and rare earth quad-doped photovoltaic phosphate glasses toward raising a-SiC:H solar cell performance

    NASA Astrophysics Data System (ADS)

    Song, P.; Zhang, C. M.; Zhu, P. F.

    2016-01-01

    Efficiency enhancement of a hydrogenated amorphous-silicon carbide (a-SiC:H) solar cell using downshifting and upconversion of photovoltaic (PV) glasses doped with transition metal (TM) ions and rare earth (RE) ions are investigated. P2O5-Li2O-Al2O3-Sb2O3-MnO-Yb2O3-Er2O3 glass doped with Sb3+-Mn2+-Yb3+-Er3+ ions is prepared and the PV glass is placed on an a-SiC:H solar cell. The performance of the cell in combination with the PV glass is simulated and measured, and the results show that the theoretical and experimental efficiencies are both enhanced compared to the bare one. The potential of TM-RE quad-doped glasses for improving the efficiency of a-SiC:H PV modules are explored.

  1. Direct pulsed laser interference texturing for light trapping in a-Si:H/μc-Si:H tandem solar cells

    NASA Astrophysics Data System (ADS)

    Ring, S.; Neubert, S.; Ruske, F.; Stannowski, B.; Fink, F.; Schlatmann, R.

    2014-05-01

    We present results on direct pulsed laser interference texturing for the fabrication of diffraction gratings in ZnO:Al layers. Micro gratings of 20 micron diameter with a groove period of 860 nm have been written using single pulses of a 355 nm picosecond laser using a home-built two-beam interference setup. The groove depth depends on the local laser intensity, and reaches up to 120 nm. At too high pulse energies, the grooves vanish due to surface melting of the ZnO. The fast scanning stage and the high repetition rate laser of a laser scribe system have been used to write grating textures of several cm2 in ZnO:Al films with a surface coverage of about 80%. A typical laser written grating texture in a ZnO:Al film showed a haze value of about 9% at 700nm. The total transmission of the film was not lowered compared to the film before texturing, while the sheet resistance increased moderately by 15%. A-Si:H/μc-Si:H solar cells with laser textured ZnO:Al front contact layers so far reach an efficiency of 10% and current densities of 11.0 mA/cm2, and 11.2 mA/cm2 for top and bottom cell, respectively. This is an increase of 16% for the bottom cell current as compared to reference cells on planar ZnO:Al. The voltage of the laser textured cells is not reduced compared to the reference cell when slightly overlapping laser pulses of reduced pulse energy are applied. This method allows to write textures in ZnO:Al films that e.g. have been deposited with strongly varying deposition conditions, or cannot be texture etched in HCl. The method can be improved further by using 2D periodic patterns and optimizing the groove pitch, and may be applicable also to other solar cell technologies.

  2. Fabrication of double barrier structures in single layer c-Si-QDs/a-SiOx films for realization of energy selective contacts for hot carrier solar cells

    NASA Astrophysics Data System (ADS)

    Kar, Debjit; Das, Debajyoti

    2017-01-01

    Thin films of c-Si-QDs embedded in an a-SiOx dielectric matrix forming arrays of double barrier structures have been fabricated by reactive rf-magnetron sputtering at ˜400 °C, without post-deposition annealing. The formation of larger size c-Si-QDs of reduced number density in homogeneous distribution within a less oxygenated a-SiOx matrix at higher plasma pressure introduces systematic widening of the average periodic distance between the adjacent `c-Si-QDs in a-SiOx', as obtained by X-ray reflectivity and transmission electron microscopy studies. A wave-like pattern in the J-E characteristics identifies the formation of periodic double-barrier structures along the path of the movement of charge carriers across the QDs and that those are originated by the a-SiOx dielectric matrix around the c-Si-QDs. A finite distribution of the size of c-Si-QDs introduces a broadening of the current density peak and simultaneously originates the negative differential resistance-like characteristics, which have suitable applications in the energy selective contacts that act as energy filters for hot carrier solar cells. A simple yet effective process technology has been demonstrated. Further initiative on tuning the energy selectivity by reducing the size and narrowing the size-distribution of Si-QDs can emerge superior energy selective contacts for hot carrier solar cells, paving ground for accomplishing all-Si solar cells.

  3. The role of high work-function metallic nanodots on the performance of a-Si:H solar cells: offering ohmic contact to light trapping.

    PubMed

    Kim, Jeehwan; Abou-Kandil, Ahmed; Fogel, Keith; Hovel, Harold; Sadana, Devendra K

    2010-12-28

    Addition of carbon into p-type "window" layers in hydrogenated amorphous silicon (a-Si:H) solar cells enhances short circuit currents and open circuit voltages by a great deal. However, a-Si:H solar cells with high carbon-doped "window" layers exhibit poor fill factors due to a Schottky barrier-like impedance at the interface between a-SiC:H windows and transparent conducting oxides (TCO), although they show maximized short circuit currents and open circuit voltages. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiC:H. Applying ultrathin high-work-function metals at the interface between the two materials results in an effective lowering of the work function mismatch and a consequent ohmic behavior. If the metal layer is sufficiently thin, then it forms nanodots rather than a continuous layer which provides light-scattering effect. We demonstrate 31% efficiency enhancement by using high-work-function materials for engineering the work function at the key interfaces to raise fill factors as well as photocurrents. The use of metallic interface layers in this work is a clear contrast to previous work where attempts were made to enhance the photocurrent using plasmonic metal nanodots on the solar cell surface.

  4. Simulation of light-induced degradation of μc-Si in a-Si/μc-Si tandem solar cells by the diode equivalent circuit

    NASA Astrophysics Data System (ADS)

    Weicht, J. A.; Hamelmann, F. U.; Behrens, G.

    2016-02-01

    Silicon-based thin film tandem solar cells consist of one amorphous (a-Si) and one microcrystalline (μc-Si) silicon solar cell. The Staebler - Wronski effect describes the light- induced degradation and temperature-dependent healing of defects of silicon-based solar thin film cells. The solar cell degradation depends strongly on operation temperature. Until now, only the light-induced degradation (LID) of the amorphous layer was examined in a-Si/μc-Si solar cells. The LID is also observed in pc-Si single function solar cells. In our work we show the influence of the light-induced degradation of the μc-Si layer on the diode equivalent circuit. The current-voltage-curves (I-V-curves) for the initial state of a-Si/pc-Si modules are measured. Afterwards the cells are degraded under controlled conditions at constant temperature and constant irradiation. At fixed times the modules are measured at standard test conditions (STC) (AM1.5, 25°C cell temperature, 1000 W/m2) for controlling the status of LID. After the degradation the modules are annealed at dark conditions for several hours at 120°C. After the annealing the dangling bonds in the amorphous layer are healed, while the degradation of the pc-Si is still present, because the healing of defects in pc-Si solar cells needs longer time or higher temperatures. The solar cells are measured again at STC. With this laboratory measured I-V-curves we are able to separate the values of the diode model: series Rs and parallel resistance Rp, saturation current Is and diode factor n.

  5. Optical scattering modeling of etched ZnO:Al superstrates and device simulation studies of a-Si:H solar cells with different texture morphologies.

    PubMed

    Yan, Xia; Li, Weimin; Aberle, Armin G; Venkataraj, Selvaraj

    2016-08-20

    Transparent conductive oxide (TCO) materials have been widely used as the front electrodes of thin-film amorphous silicon (a-Si:H) solar cells. To improve the performance of solar cells, textured front TCO is required as the optical layer which effectively scatters the incoming light and thus enhances the photon absorption within the device. One promising TCO material is aluminum-doped zinc oxide (AZO), which is most commonly prepared by magnetron sputtering. After deposition, sputtered AZO films are typically wet-chemically etched using diluted hydrochloric (HCl) or hydrofluoric (HF) acid to obtain rough surface morphologies. In this paper, we report the effects of a textured AZO front electrode on the performance of a-Si:H solar cells based on optical scattering modeling and electrical device simulations, involving four different AZO surface morphologies. The simulated light scattering behaviors indicate that a better textured surface not only scatters more light, but also allows more light get transmitted into the absorber (∼90% of visible light), due to greatly reduced front reflection by the rough surface. Device simulation results show that the two-step AZO texturing process should give improved a-Si:H solar cell performance, with an enhanced short-circuit current density of 16.5  mA/cm2, which leads to a high photovoltaic (PV) efficiency of 9.9%.

  6. Opto-electronic properties of P-doped nc-Si–QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration

    SciTech Connect

    Kar, Debjit; Das, Debajyoti

    2016-07-14

    With the advent of nc-Si solar cells having improved stability, the efficient growth of nc-Si i-layer of the top cell of an efficient all-Si solar cell in the superstrate configuration prefers nc-Si n-layer as its substrate. Accordingly, a wide band gap and high conducting nc-Si alloy material is a basic requirement at the n-layer. Present investigation deals with the development of phosphorous doped n-type nanocrystalline silicon quantum dots embedded in hydrogenated amorphous silicon carbide (nc-Si–QD/a-SiC:H) hetero-structure films, wherein the optical band gap can be widened by the presence of Si–C bonds in the amorphous matrix and the embedded high density tiny nc-Si–QDs could provide high electrical conductivity, particularly in P-doped condition. The nc-Si–QDs simultaneously facilitate further widening of the optical band gap by virtue of the associated quantum confinement effect. A complete investigation has been made on the electrical transport phenomena involving charge transfer by tunneling and thermionic emission prevailing in n-type nc-Si–QD/a-SiC:H thin films. Their correlation with different phases of the specific heterostructure has been carried out for detailed understanding of the material, in order to improve its device applicability. The n-type nc-Si–QD/a-SiC:H films exhibit a thermally activated electrical transport above room temperature and multi-phonon hopping (MPH) below room temperature, involving defects in the amorphous phase and the grain-boundary region. The n-type nc-Si–QD/a-SiC:H films grown at ∼300 °C, demonstrating wide optical gap ∼1.86–1.96 eV and corresponding high electrical conductivity ∼4.5 × 10{sup −1}–1.4 × 10{sup −2} S cm{sup −1}, deserve to be an effective foundation layer for the top nc-Si sub-cell of all-Si solar cells in n-i-p structure with superstrate configuration.

  7. Opto-electronic properties of P-doped nc-Si-QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration

    NASA Astrophysics Data System (ADS)

    Kar, Debjit; Das, Debajyoti

    2016-07-01

    With the advent of nc-Si solar cells having improved stability, the efficient growth of nc-Si i-layer of the top cell of an efficient all-Si solar cell in the superstrate configuration prefers nc-Si n-layer as its substrate. Accordingly, a wide band gap and high conducting nc-Si alloy material is a basic requirement at the n-layer. Present investigation deals with the development of phosphorous doped n-type nanocrystalline silicon quantum dots embedded in hydrogenated amorphous silicon carbide (nc-Si-QD/a-SiC:H) hetero-structure films, wherein the optical band gap can be widened by the presence of Si-C bonds in the amorphous matrix and the embedded high density tiny nc-Si-QDs could provide high electrical conductivity, particularly in P-doped condition. The nc-Si-QDs simultaneously facilitate further widening of the optical band gap by virtue of the associated quantum confinement effect. A complete investigation has been made on the electrical transport phenomena involving charge transfer by tunneling and thermionic emission prevailing in n-type nc-Si-QD/a-SiC:H thin films. Their correlation with different phases of the specific heterostructure has been carried out for detailed understanding of the material, in order to improve its device applicability. The n-type nc-Si-QD/a-SiC:H films exhibit a thermally activated electrical transport above room temperature and multi-phonon hopping (MPH) below room temperature, involving defects in the amorphous phase and the grain-boundary region. The n-type nc-Si-QD/a-SiC:H films grown at ˜300 °C, demonstrating wide optical gap ˜1.86-1.96 eV and corresponding high electrical conductivity ˜4.5 × 10-1-1.4 × 10-2 S cm-1, deserve to be an effective foundation layer for the top nc-Si sub-cell of all-Si solar cells in n-i-p structure with superstrate configuration.

  8. Engineering Dilute Nitride Semiconductor Alloys for Intermediate Band Solar Cells

    NASA Astrophysics Data System (ADS)

    Luce, Alexander Vallejo

    The growth and characterization of GaAs nanowires and GaNPAs thin-films is discussed within the context of finding a material system that is suitable as an intermediate band solar cell (IBSC) absorber. The IBSC is an attractive concept proposed to exceed the Shockley-Queisser detailed balance limit for photovoltaic efficiency. These solar cells have an additional intermediate band, allowing for the absorption of below bandgap photons, thus resulting in an increase in photocurrent and higher efficiency. Suitable materials systems for the implementation of the IBSC concept, however, are presently lacking. Recent work on the highly-mismatched alloy (HMA) GaAsN has shown that the unique features of the electronic band structure demonstrate optical activity of three energy bands and have led to the realization of a proof-of-concept IBSC. GaAsN, however, is not without shortcomings. Another HMA material, GaNPAs, which offers a wide range of bandgap tunability and is better matched to the solar spectrum is proposed. This work covers the optical characterization of both GaAs nanowires and GaAsPN using traditional visible-light semiconductor characterization techniques including optical absorption spectroscopy, photo-modulated reflectance, steady-state photoluminescence, and spectral photoconductivity. Additionally, photovoltaic devices based on GaNPAs are demonstrated and assessed as potential IBSCs.

  9. Preparation of born-doped a-SiC:H thin films by ICP-CVD method and to the application of large-area heterojunction solar cells.

    PubMed

    Jeong, Chaehwan; Kim, Young-Back; Lee, Suk-Ho; Kim, Jin Hyeok

    2010-05-01

    Hydrogenated amorphous silicon carbide (a-SiC:H) film has been widely used as an emitter p layer in solar cells. For the better p layer, wide optical bandgap, and high electrical conductivity should be obtained from the effective method. We prepared the boron-doped a-SiC:H thin films using inductively coupled plasma chemical vapor deposition (ICP-CVD) method and characteristics on the small-area (2 cm x 2 cm) as well as the large-area films (diameter of 100 mm) were shown on it. As a substrate, the n-type (100) oriented CZ c-Si (5.5 approximately 6.5 omega x cm, 650 microm) wafers were used and cleaned by using the reduced RCA method. A silane (SiH4) of 99.999% purity, H2 and 60% hydrogen diluted ethylene (C2H4) was used as source gas for the deposition of intrinsic a-SiC:H films, and then diborane (B2H6), as the doping gas, is added to C2H4 and SiH4/H2 during the deposition of films. The uniformity of thickness and optical bandgap from large-area as-dep. films was at 1.8% and 0.3%, respectively. Heterojunction solar cell with 2 wt%-AZO/p-a-SiC:H/i-a-Si:H/c-Si/Ag structure was fabricated and characterized with diameter of 152.3 mm in this large-area ICP-CVD system. Conversion efficiency of 9.123% was achieved with a practical area of 100 mm x 100 mm, which can show the potentials to the fabrication of the large-area solar cell using ICP-CVD method.

  10. Explicit analytical modeling of the low frequency a-Si:H/c-Si heterojunction capacitance: Analysis and application to silicon heterojunction solar cells

    SciTech Connect

    Maslova, O.; Brézard-Oudot, A.; Gueunier-Farret, M.-E.; Alvarez, J.; Kleider, J.-P.

    2015-09-21

    We develop a fully analytical model in order to describe the temperature dependence of the low frequency capacitance of heterojunctions between hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si). We demonstrate that the slope of the capacitance-temperature (C-T) curve is strongly enhanced if the c-Si surface is under strong inversion conditions compared to the usually assumed depletion layer capacitance. We have extended our analytical model to integrate a very thin undoped (i) a-Si:H layer at the interface and the finite thickness of the doped a-Si:H layer that are used in high efficiency solar cells for the passivation of interface defects and to limit short circuit current losses. Finally, using our calculations, we analyze experimental data on high efficiency silicon heterojunction solar cells. The transition from the strong inversion limited behavior to the depletion layer behavior is discussed in terms of band offsets, density of states in a-Si:H, and work function of the indium tin oxide (ITO) front electrode. In particular, it is evidenced that strong inversion conditions prevail at the c-Si surface at high temperatures down to 250 K, which can only be reproduced if the ITO work function is larger than 4.7 eV.

  11. The effect of employing the p/i buffer layers and in-situ hydrogen treatment for transparent a-Si:H solar cells.

    PubMed

    Lee, Da Jung; Yun, Sun Jin; Park, Min A; Lim, Jung Wook

    2014-05-01

    In this study, we describe the effects of various thicknesses of triple p/i buffer layers and hydrogen treatment on various performances in the fabrication of transparent a-Si:H solar cells. For the increment of buffer layer thickness, V(oc) increases steadily and J(sc) firstly increases and then decreases. The triple buffer layers also enhance the transmittance as well as conversion efficiency. For hydrogen plasma treatment, overall performances were enhanced with plasma power due to the passivation of dangling bonds at p/i interface. Therefore, the usage of triple buffer layers with proper treatment is beneficial to obtaining transparent a-Si:H solar cells with high quality.

  12. Space-charge-limited currents: Refinements in analysis and applications to a-Si/sub 1-x/Ge/sub x/:H alloys

    SciTech Connect

    Weisfield, R.L.

    1983-11-01

    A new algorithm is described for deriving the density of states N(E) from the Fermi energy E/sub F/ upwards toward the conduction band edge. This refinement in the analysis of space-charge-limited currents (SCLC) enables the accurate determination of N(E) by implicitly accounting for the spatial variations of physical quantities across the thickness of the diode. SCLC is measured in NiCr/n/sup +//a-Si/sub 1-x/Ge/sub x/:H/Pt diode structures. For a-Si:H samples, SCLC values for N(E/sub F/) are compared to those derived from admittance measurements on the same diodes. The two determinations agree in samples where 10/sup 16/a-Si/sub 0.7/Ge/sub 0.3/:H is also investigated, as a function of hydrogen content c/sub H/, optical gap, and photoluminescence intensity I/sub PL/. In this alloy increasing c/sub H/ causes N(E/sub F/) to decrease, to a minimum of 3 x 10/sup 16/ for c/sub H/ = 14 at. %. I/sub PL/ increases inversely with N(E/sub F/), confirming the sensitivity of SCLC to bulk nonradiative recombination centers.

  13. Understanding the Potential and Limitations of Dilute Nitride Alloys for Solar Cells

    SciTech Connect

    Kurtz, S.; Ptak, A.; Johnston, S.; Kramer, C.; Young, M.; Friedman, D.; Geisz, J.; McMahon, W.; Kibbler, A.; Olson, J.; Crandall, R.; Branz, H.

    2005-11-01

    Dilute nitride alloys provide a powerful tool for engineering the band gap and lattice constant of III-V alloys. However, nitrogen degrades the performance of GaAs solar cells. This project seeks to understand and demonstrate the limits of performance of GaInNAs alloys by (a) correlating deep-level transient spectroscopy (DLTS) data with device performance and (b) using molecular beam epitaxy (MBE) to reduce background impurity concentrations.

  14. Enhancement of a-Si:H solar cell efficiency by Y2O3 : Yb3+, Er3+ near infrared spectral upconverter

    NASA Astrophysics Data System (ADS)

    Markose, Kurias K.; Anjana, R.; Subha, P. P.; Antony, Aldrin; Jayaraj, M. K.

    2016-09-01

    The optical properties of Yb3+/Er3+ doped Y2O3 upconversion phosphor and the enhancement of efficiency of a-Si:H solar cell on incorporation of upconverter are investigated. The Y2O3 host material has high corrosion resistance, thermal stability, chemical stability, low toxicity and relatively low phonon energy (≈ 500 cm-1). Y2O3:Yb3+ (x %): Er3+ (y %) upconversion nanophosphors with different dopant concentrations were synthesized via simple hydrothermal method followed by a heat treatment at 1200°C for 12 hrs. Highly crystalline, quasi-spherical, body centered cubic Y2O3 structure was obtained. The structure, phase and morphology of the nanocrystals were determined using x-ray diffraction and SEM. Following pumping at 980 nm two dominant emission bands were observed at about 550 nm(green) and 660 nm(red), corresponding to 2H11/2, 4S3/2 -> 4I15/2 and 4F9/2 -> 4I15/2 transitions respectively. The dependence of emission intensity on pump power shows that the mechanism involved is two photon absorption. The upconversion phosphor along with a binder is coupled behind the a-Si:H solar cell which absorbs transmitted sub-band-gap photons and emits back the upconverted visible light which can be absorbed by the solar cell. Under suitable intensity of illumination the solar cell short circuit current is found to be increased on adding the upconversion layer.

  15. Highly conducting and wide band gap phosphorous doped nc-Si-QD/a-SiC films as n-type window layers for solar cells

    NASA Astrophysics Data System (ADS)

    Kar, Debjit; Das, Debajyoti

    2016-05-01

    Nano-crystalline silicon quantum dots (Si-QDs) embedded in the phosphorous doped amorphous silicon carbide (a-SiC) matrix has been successfully prepared at a low temperature (300 °C) by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD) system from (SiH4 + CH4)-plasma with PH3 as the doping gas. The effect of PH3 flow rate on structural, optical and electrical properties of the films has been studied. Phosphorous doped nc-Si-QD/a-SiC films with high optical band gap (>1.9 eV) and superior conductivity (~10-2 S cm-1) are obtained, which could be appropriately used as n-type window layers for nc-Si solar cells in n-i-p configuration.

  16. Highly conducting and wide band gap phosphorous doped nc-Si–QD/a-SiC films as n-type window layers for solar cells

    SciTech Connect

    Kar, Debjit; Das, Debajyoti

    2016-05-23

    Nano-crystalline silicon quantum dots (Si-QDs) embedded in the phosphorous doped amorphous silicon carbide (a-SiC) matrix has been successfully prepared at a low temperature (300 °C) by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD) system from (SiH{sub 4} + CH{sub 4})-plasma with PH{sub 3} as the doping gas. The effect of PH{sub 3} flow rate on structural, optical and electrical properties of the films has been studied. Phosphorous doped nc-Si–QD/a-SiC films with high optical band gap (>1.9 eV) and superior conductivity (~10{sup −2} S cm{sup −1}) are obtained, which could be appropriately used as n-type window layers for nc-Si solar cells in n-i-p configuration.

  17. Study on limiting efficiencies of a-Si:H/μc-Si:H-based single-nanowire solar cells under single and tandem junction configurations

    NASA Astrophysics Data System (ADS)

    Zhai, Xiongfei; Cao, Guoyang; Wu, Shaolong; Shang, Aixue; Li, Xiaofeng

    2015-11-01

    Detailed balance calculations are presented for a-Si:H/μc-Si:H-based single- and tandem-junction single-nanowire solar cells (S- and T-SNSCs). Our study is based on three-dimensional finite-element electromagnetic simulation and thermodynamic balanced analysis, which includes radiative and Auger recombinations simultaneously. We quantify and compare the limiting short-circuit current densities, open-circuit voltages, and light-conversion efficiencies of these highly compact photovoltaic cells, addressing especially the effect of Auger recombination on the open-circuit voltages of SNSCs. Results show that tandem design leads to much higher light-conversion capability than μc-Si:H S-SNSCs, but exhibits superior performance than a-Si:H S-SNSCs only for cells with large radii.

  18. Study on limiting efficiencies of a-Si:H/μc-Si:H-based single-nanowire solar cells under single and tandem junction configurations

    SciTech Connect

    Zhai, Xiongfei; Cao, Guoyang; Wu, Shaolong E-mail: xfli@suda.edu.cn; Shang, Aixue; Li, Xiaofeng E-mail: xfli@suda.edu.cn

    2015-11-02

    Detailed balance calculations are presented for a-Si:H/μc-Si:H-based single- and tandem-junction single-nanowire solar cells (S- and T-SNSCs). Our study is based on three-dimensional finite-element electromagnetic simulation and thermodynamic balanced analysis, which includes radiative and Auger recombinations simultaneously. We quantify and compare the limiting short-circuit current densities, open-circuit voltages, and light-conversion efficiencies of these highly compact photovoltaic cells, addressing especially the effect of Auger recombination on the open-circuit voltages of SNSCs. Results show that tandem design leads to much higher light-conversion capability than μc-Si:H S-SNSCs, but exhibits superior performance than a-Si:H S-SNSCs only for cells with large radii.

  19. Influence of thin metal as a top electrode on the characteristics of P-I-N a- Si:H solar cells

    SciTech Connect

    Han, M.; Anderson, W.A.; Lahri, R.; Coleman, J.

    1981-04-01

    Hydrogenated amorphous silicon (a-Si:H) p-n junction solar cells have been fabricated which utilize various metals (Cr, Cu, Al, Pd, Ag) as a top electrode. Experimental and theoretical analysis of photovolatic performance in a-Si:H solar cells as a function of resistivity, optical transmittance, and work function of thin metal films are presented. Metal work function changes the effective built-in potential of p-n junction diodes. Furthermore, a lower work function metal forms a good Ohmic contact for substrate --P/sup +/-I-N/sup +/-- electrode cells, and high work function metals improve V/sub oc/ of substrate -N-I-P cells. Typical V/sub o/c values are 760 mV with Cr--, Cu--, and Al--N-I-P--stainless steel (SS), 700 mV with Pd--N-I-P-SS, 600 mV with Pd--P-I-N-SS, and 540 mV with Cr--P-I-N-SS. J/sub sc/ is strongly dependent on transmittance and resistivity of the metal films. Fill factor is independent of the choice of a top electrode. An efficient of 2% has been obtained on a 2 cm/sup 2/ solar cell.

  20. Evidence of significant down-conversion in a Si-based solar cell using CuInS{sub 2}/ZnS core shell quantum dots

    SciTech Connect

    Gardelis, Spiros Nassiopoulou, Androula G.

    2014-05-05

    We report on the increase of up to 37.5% in conversion efficiency of a Si-based solar cell after deposition of light-emitting Cd-free, CuInS{sub 2}/ZnS core shell quantum dots on the active area of the cell due to the combined effect of down-conversion and the anti- reflecting property of the dots. We clearly distinguished the effect of down-conversion from anti-reflection and estimated an enhancement of up to 10.5% in the conversion efficiency due to down-conversion.

  1. Near-field light concentration of ultra-small metallic nanoparticles for absorption enhancement in a-Si solar cells

    NASA Astrophysics Data System (ADS)

    Cai, Boyuan; Jia, Baohua; Shi, Zhengrong; Gu, Min

    2013-03-01

    Near-field light concentration from plasmonic nanostructures was predicted to significantly improve solar cell conversion efficiency since the inception of plasmonic solar cells. However the challenge remains in designing effective nanostructures for useful near-field enhancement much exceeding the detrimental ohmic loss and light blockage losses in solar cells. We propose and demonstrate ultra-small (a few nanometers) gold nanoparticles integrated in amorphous silicon solar cells between the front electrode and the photoactive layer. Significant enhancements in both the photocurrent (14.1%) and fill factor (12.3%) have been achieved due to the strong plasmonic near-field concentration and the reduced contact resistance, respectively.

  2. Production Of Tandem Amorphous Silicon Alloy Solar Cells In A Continuous Roll-To-Roll Process

    NASA Astrophysics Data System (ADS)

    Izu, Masat; Ovshinsky, Stanford R.

    1983-09-01

    A roll-to-roll plasma deposition machine for depositing multi-layered amorphous alloys has been developed. The plasma deposition machine (approximately 35 ft. long) has multiple deposition areas and processes 16-inch wide stainless steel substrate continuously. Amorphous photovoltaic thin films (less than 1pm) having a six layered structure (PINPIN) are deposited on a roll of 16-inch wide 1000 ft. long stainless steel substrate, continu-ously, in a single pass. Mass production of low-cost tandem amorphous solar cells utilizing roll-to-roll processes is now possible. A commercial plant utilizing this plasma deposition machine for manufacturing tandem amorphous silicon alloy solar cells is now in operation. At Energy Conversion Devices, Inc. (ECD), one of the major tasks of the photovoltaic group has been the scale-up of the plasma deposition process for the production of amorphous silicon alloy solar cells. Our object has been to develop the most cost effective way of producing amorphous silicon alloy solar cells having the highest efficiency. The amorphous silicon alloy solar cell which we produce has the following layer structure: 1. Thin steel substrate. 2. Multi-layered photovoltaic amorphous silicon alloy layers (approximately 1pm thick; tandem cells have six layers). 3. ITO. 4. Grid pattern. 5. Encapsulant. The deposition of the amorphous layer is technologically the key process. It was clear to us from the beginning of this scale-up program that amorphous silicon alloy solar cells produced in wide width, continuous roll-to-roll production process would be ultimate lowest cost solar cells according to the following reasons. First of all, the material cost of our solar cells is low because: (1) the total thickness of active material is less than 1pm, and the material usage is very small; (2) silicon, fluorine, hydrogen, and other materials used in the device are abundant and low cost; (3) thin, low-cost substrate is used; and (4) product yield is high. In

  3. Optimization of Phase-Engineered a-Si:H-Based Multi-Junction Solar Cells: Final Technical Report, October 2001-July 2005

    SciTech Connect

    Wronski, C. R.; Collins, R. W.; Podraza, N. J.; Vlahos, V.; Pearce, J. M.; Deng, J.; Albert, M.; Ferreira, G. M.; Chen, C.

    2006-08-01

    The scope of the work under this subcontract has involved investigating engineered improvements in the performance and stability of solar cells in a systematic way, which included the following four tasks: (1) Materials research and device development; (2) Process improvement directed by real time diagnostics; (3) Device loss mechanisms; and (4) Characterization strategies for advanced materials Our work has resulted in new and important insights into the deposition of a-Si:H-based materials, as well as into the nature of the Staebler-Wronski Effect (SWE). Presumably, many of these insights will be used by industrial partners to develop more systematic approaches in optimizing solar cells for higher performance and stability. This effort also cleared up several serious misconceptions about the nature of the p-layer in cells and the SWE in materials and cells. Finally, the subcontract identified future directions that should be pursued for greater understanding and improvement.

  4. Analysis of poly-Si thin film p^+-n-n+ homojunction solar cell and heterojunction solar cell with and without a thin μc-Si layer at the interface of a-Si and poly-Si layers

    NASA Astrophysics Data System (ADS)

    Letha, A. J.; Hwang, H. L.

    2009-05-01

    In this study, new possibilities for higher efficiency poly-Si thin film solar cells are investigated using MEDICI^TM device simulator. The poly-Si p^+-n-n+ thin film solar cell with a thin a-Si p+ layer is found to have higher efficiency than the homojunction p^+-n-n+ cell. Further improvement in efficiency of the heterojunction p^+-n-n+ cell is achieved by introducing a thin μc-Si layer at the interface of a-Si emitter and poly-Si absorber layers. The μc-Si layer at the interface is found to reduce the recombination losses at the interface and improved the fill factor and efficiency of the cell. The photovoltaic parameters of the cell and the absorber layer thickness for optimum efficiency are highly influenced by grain size and passivation at the grain boundary.

  5. Impedance spectroscopy of heterojunction solar cell a-SiC/c-Si with ITO antireflection film investigated at different temperatures

    NASA Astrophysics Data System (ADS)

    Šály, V.; Perný, M.; Janíček, F.; Huran, J.; Mikolášek, M.; Packa, J.

    2017-04-01

    Progressive smart photovoltaic technologies including heterostructures a-SiC/c-Si with ITO antireflection film are one of the prospective replacements of conventional photovoltaic silicon technology. Our paper is focused on the investigation of heterostructures a-SiC/c-Si provided with a layer of ITO (indium oxide/tin oxide 90/10 wt.%) which acts as a passivating and antireflection coating. Prepared photovoltaic cell structure was investigated at various temperatures and the influence of temperature on its operation was searched. The investigation of the dynamic properties of heterojunction PV cells was carried out using impedance spectroscopy. The equivalent AC circuit which approximates the measured impedance data was proposed. Assessment of the influence of the temperature on the operation of prepared heterostructure was carried out by analysis of the temperature dependence of AC equivalent circuit elements.

  6. Fabrication and testing of mis solar cells on a-Si:F:H. Final report, September 15, 1979-September 15, 1980

    SciTech Connect

    Han, M. K.; Anderson, W. A.

    1980-11-03

    Fabrication techniques and improved a-Si:H film processing have been achieved to produce a short circuit current density of 7.5 mA/cm/sup 2/ and open circuit voltage of 740 mV on large area (2cm/sup 2/) a-Si cells by the deposition of an inexpensive semitransparent metal (Cr) as a top electrode on a N-I-P structure. This corresponds to a 2% efficiency using AMl illumination. A V/sub oc/ of 830 mV and fill factor of 0.54 have also been separately obtained. A relatively simple and inexpensive deposition technique using a one pumpdown vacuum system, Al grid and thin metal film structure have been applied to reduce the cost of a-Si:H cell fabrication. A SEM study of a-Si film quality shows the substrate texture to greatly influence the film morphology. This in turn serves to influence the uniformity of photovoltaic response on completed solar cells. The studies of optical transmittance of various thin metal films promote the utilization of Cr and Cu as a top electrode. Dark and illuminated I-V characteristics show that current conduction mechanisms and recombination pheonomena are not the same under dark and illuminated conditions. Furthermore, spectral response analysis and reverse illuminated saturation current under different illumination levels show photoconductivity and collection efficiency to be a function of illumination level. Significant differences in spectral response are observed when comparing P-I-N, N-I-P and I-N structures. A Schottky barrier lowering effect is proposed to explain some spectral response data. The importance of the top junction region to carrier collection is also discussed.

  7. CDTE alloys and their application for increasing solar cell performance

    NASA Astrophysics Data System (ADS)

    Swanson, Drew E.

    -ray photoelectron spectroscopy, and energy-dispersive x-ray spectroscopy were performed to characterize these cells. Voltage improvements on the order of 50 mV are presented at a thin (1 ?m) CdTe absorber condition. However an overall reduction in fill factor (FF) is seen, with a strong reduction in FF as the magnesium incorporation is increased. Detailed material characterization shows the formation of oxides at the back of CdMgTe during the passivation process. A CdTe capping layer is added to reduce oxidation and help maintain the uniformity of the CdMgTe layer. A tellurium back contact is also added in place of a carbon paint back contact, reducing the impact of the valance band offset (VBO) from the CMT. With the addition of the capping layer and tellurium back contact a consistent 50 mV increase is seen with improved FF. However this voltage increase is well below modeled Voc increases of 150 mV. CMT double hetero-structures are manufactured and analyzed to estimate the interface recombination at the CdTe/CMT interface. The CdTe/CMT interface is approximated at 2*105 cm s-1 and modeling is referenced predicting significant reduction in performance based on this interface quality. To improve interface quality by removing the need for a vacuum break, the deposition hardware is incorporated into the primary deposition system. Second, CdTe has a somewhat higher band gap than optimal for single-junction terrestrial solar-cell power generation. A reduction in the band gap could therefore result in an overall improvement in performance. To reduce the band gap, selenium was alloyed with CdTe using a novel co-sublimation extension of the close-space-sublimation process. Co-sublimated layers of CdSeTe with various selenium concentrations were characterized for optical absorption and atomic concentrations, as well as to track changes in their morphology and crystallinity. The lower band-gap CdSeTe films were then incorporated into the front of CdTe cells. This two-layer band

  8. Application of InAlAs/GaAs superlattice alloys to GaAs solar cells

    SciTech Connect

    Drummond, T.J.; Gee, J. ); Terry, F.L.; Weng, R. . Dept. of Electrical Engineering and Computer Science)

    1990-01-01

    AlGaAs/GaAs solar cells are typically characterized as having relatively high interface recombination velocities at the heteroface. This work examines some of the factors influencing the design of solar cell window layers and considers the effect of substituting InAlAs/GaAs superlattice alloys and InAlAs bulk alloys in place of AlGaAs. Potential advantages are reduced surface recombination at the heterojunction, reduced thermionic emission into the window layer, thinner window layers and reduced absorption in the window layer. 9 refs., 5 figs.

  9. Spectroscopic Ellipsometry Studies of Thin Film a-Si:H/nc-Si:H Micromorph Solar Cell Fabrication in the p-i-n Superstrate Configuration

    NASA Astrophysics Data System (ADS)

    Huang, Zhiquan

    Spectroscopic ellipsometry (SE) is a non-invasive optical probe that is capable of accurately and precisely measuring the structure of thin films, such as their thicknesses and void volume fractions, and in addition their optical properties, typically defined by the index of refraction and extinction coefficient spectra. Because multichannel detection systems integrated into SE instrumentation have been available for some time now, the data acquisition time possible for complete SE spectra has been reduced significantly. As a result, real time spectroscopic ellipsometry (RTSE) has become feasible for monitoring thin film nucleation and growth during the deposition of thin films as well as during their removal in processes of thin film etching. Also because of the reduced acquisition time, mapping SE is possible by mounting an SE instrument with a multichannel detector onto a mechanical translation stage. Such an SE system is capable of mapping the thin film structure and its optical properties over the substrate area, and thereby evaluating the spatial uniformity of the component layers. In thin film photovoltaics, such structural and optical property measurements mapped over the substrate area can be applied to guide device optimization by correlating small area device performance with the associated local properties. In this thesis, a detailed ex-situ SE study of hydrogenated amorphous silicon (a-Si:H) thin films and solar cells prepared by plasma enhanced chemical vapor deposition (PECVD) has been presented. An SE analysis procedure with step-by-step error minimization has been applied to obtain accurate measures of the structural and optical properties of the component layers of the solar cells. Growth evolution diagrams were developed as functions of the deposition parameters in PECVD for both p-type and n-type layers to characterize the regimes of accumulated thickness over which a-Si:H, hydrogenated nanocrystalline silicon (nc-Si:H) and mixed phase (a

  10. Study of the Staebler-Wronski degradation effect in a-Si:H based p-i-n solar cell

    NASA Technical Reports Server (NTRS)

    Naseem, H. A.; Brown, W. D.; Ang, S. S.

    1993-01-01

    Conversion of solar energy into electricity using environmentally safe and clean photovoltaic methods to supplement the ever increasing energy needs has been a cherished goal of many scientists and engineers around the world. Photovoltaic solar cells on the other hand, have been the power source for satellites ever since their introduction in the early sixties. For widespread terrestrial applications, however, the cost of photovoltaic systems must be reduced considerably. Much progress has been made in the recent past towards developing economically viable terrestrial systems, and the future looks highly promising. Thin film solar cells offer cost reductions mainly from their low processing cost, low material cost, and choice of low cost substrates. These are also very attractive for space applications because of their high power densities (power produced per kilogram of solar cell pay load) and high radiation resistance. Amorphous silicon based solar cells are amongst the top candidates for economically viable terrestrial and space based power generation. Despite very low federal funding during the eighties, amorphous silicon solar cell efficiencies have continually been improved - from a low 3 percent to over 13 percent now. Further improvements have been made by the use of multi-junction tandem solar cells. Efficiencies close to 15 percent have been achieved in several labs. In order to be competitive with fossil fuel generated electricity, it is believed that module efficiency of 15 percent or cell efficiency of 20 percent is required. Thus, further improvements in cell performance is imperative. One major problem that was discovered almost 15 years ago in amorphous silicon devices is the well known Staebler-Wronski Effect. Efficiency of amorphous silicon solar cells was found to degrade upon exposure to sunlight. Until now their is no consensus among the scientists on the mechanism for this degradation. Efficiency may degrade anywhere from 10 percent to almost

  11. Combination of optical and electrical loss analyses for a Si-phthalocyanine dye-sensitized solar cell.

    PubMed

    Lin, Keng-Chu; Wang, Lili; Doane, Tennyson; Kovalsky, Anton; Pejic, Sandra; Burda, Clemens

    2014-12-11

    In order to promote the development of solar cells with varying types of sensitizers including dyes and quantum dots, it is crucial to establish a general experimental analysis that accounts for all important optical and electrical losses resulting from interfacial phenomena. All of these varying types of solar cells share common features where a mesoporous scaffold is used as a sensitizer loading support as well as an electron transport material, which may result in light scattering. The loss of efficiency at interfaces of the sensitizer, the mesoporous TiO2 nanoparticle films, the FTO conductive layer, and the supportive glass substrate should be considered in addition to the photoinduced electron transport properties within a cell. On the basis of optical parameters, one can obtain the internal quantum efficiency (IQE) of a solar cell, an important parameter that cannot be directly measured but must be derived from several key experiments. By integrating an optical loss model with an electrical loss model, many solar cell parameters could be characterized from electro-optical observables including reflectance, transmittance, and absorptance of the dye sensitizer, the electron injection efficiency, and the charge collection efficiency. In this work, an integrated electro-optical approach has been applied to SiPc (Pc 61) dye-sensitized solar cells for evaluating the parameters affecting the overall power conversion efficiency. The absorptance results of the Pc 61 dye-sensitized solar cell provide evidence that the adsorbed Pc 61 forms noninjection layers on TiO2 surfaces when the dye immersion time exceeds 120 min, resulting in shading light from the active layer rather than an increase in photoelectric current efficiency.

  12. Thermal storage/discharge performances of Cu-Si alloy for solar thermochemical process

    NASA Astrophysics Data System (ADS)

    Gokon, Nobuyuki; Yamaguchi, Tomoya; Cho, Hyun-seok; Bellan, Selvan; Hatamachi, Tsuyoshi; Kodama, Tatsuya

    2017-06-01

    The present authors (Niigata University, Japan) have developed a tubular reactor system using novel "double-walled" reactor/receiver tubes with carbonate molten-salt thermal storage as a phase change material (PCM) for solar reforming of natural gas and with Al-Si alloy thermal storage as a PCM for solar air receiver to produce high-temperature air. For both of the cases, the high heat capacity and large latent heat (heat of solidification) of the PCM phase circumvents the rapid temperature change of the reactor/receiver tubes at high temperatures under variable and uncontinuous characteristics of solar radiation. In this study, we examined cyclic properties of thermal storage/discharge for Cu-Si alloy in air stream in order to evaluate a potentiality of Cu-Si alloy as a PCM thermal storage material. Temperature-increasing performances of Cu-Si alloy are measured during thermal storage (or heat-charge) mode and during cooling (or heat-discharge) mode. A oxidation state of the Cu-Si alloy after the cyclic reaction was evaluated by using electron probe micro analyzer (EPMA).

  13. Two-dimensional simulation of interdigitated back contact silicon heterojunction solar cells having overlapped p/i and n/i a-Si:H layers

    NASA Astrophysics Data System (ADS)

    Noge, Hiroshi; Saito, Kimihiko; Sato, Aiko; Kaneko, Tetsuya; Kondo, Michio

    2015-08-01

    The performance of interdigitated back contact silicon heterojunction solar cells having overlapped p/i and n/i a-Si:H layers on the back has been investigated by two-dimensional simulation in comparison with the conventional cell structure having a gap between p/i and n/i layers. The results show that narrower overlap width leads to higher short circuit current and conversion efficiency, especially for poor heterojunction interface and thinner silicon substrate of the cells in addition to narrower uncovered width of p/i layer by a metal electrode. This is similar to the gap width dependence in the conventional cells, since both overlap and gap act as dead area for diffused excess carriers in the back contacts.

  14. Using SiOx nano-films to enhance GZO Thin films properties as front electrodes of a-Si solar cells

    NASA Astrophysics Data System (ADS)

    Chang, Kow-Ming; Ho, Po-Ching; Yu, Shu-Hung; Hsu, Jui-Mei; Yang, Kuo-Hui; Wu, Chin-Jyi; Chang, Chia-Chiang

    2013-07-01

    One of the essential applications of transparent conductive oxides is as front electrodes for superstrate silicon thin-film solar cells. Textured TCO thin films can improve absorption of sunlight for an a-Si:H absorber during a single optical path. In this study, high-haze and low-resistivity bilayer GZO/SiOx thin films prepared using an atmospheric pressure plasma jet (APPJ) deposition technique and dc magnetron sputtering. The silicon subdioxide nano-film plays an important role in controlling the haze value of subsequent deposited GZO thin films. The bilayer GZO/SiOx (90 sccm) sample has the highest haze value (22.30%), the lowest resistivity (8.98 × 10-4 Ω cm), and reaches a maximum cell efficiency of 6.85% (enhanced by approximately 19% compared to a sample of non-textured GZO).

  15. Characterizing the effects of silver alloying in chalcopyrite CIGS solar cells with junction capacitance methods

    SciTech Connect

    Erslev, Peter T.; Hanket, Gregory M.; Shafarman, William N.; Cohen, J. David

    2009-04-01

    A variety of junction capacitance-based characterization methods were used to investigate alloys of Ag into Cu(In1-xGax)Se2 photovoltaic solar cells over a broad range of compositions. These alloys show encouraging trends of increasing VOC with increasing Ag content, opening the possibility of wide-gap cells for use in tandem device applications. Drive level capacitance profiling (DLCP) has shown very low free carrier concentrations for all Ag-alloyed devices, in some cases less than 1014 cm-3, which is roughly an order of magnitude lower than that of CIGS devices. Transient photocapacitance spectroscopy has revealed very steep Urbach edges, with energies between 10 meV and 20 meV, in the Ag-alloyed samples. This is in general lower than the Urbach edges measured for standard CIGS samples and suggests a significantly lower degree of structural disorder.

  16. Direct Correlation Between Film Structure and Solar Cell Efficiency for HWCVD Amorphous Silicon Germanium Alloys

    SciTech Connect

    Mahan, A. H.; Xu, Y.; Gedvilas, L. M.; Williamson, D. L.

    2009-01-01

    The film structure and H bonding of high deposition rate a-SiGe:H i-layers, deposited by HWCVD and containing {approx}40 at.% Ge, have been investigated using deposition conditions which replicate those used in n-i-p solar cell devices. Increasing the germane source gas depletion in HWCVD causes not only a decrease in solar cell efficiency from 8.64% to less than 7.0%, but also an increase in both the i-layer H preferential attachment ratio (PA) and the film microstructure fraction (R{sup {sq_bullet}}). Measurements of the XRD medium range order over a wide range of germane depletion indicate that this order is already optimum for the HWCVD i-layers, suggesting that energetic bombardment of a-SiGe:H films may not always be necessary to achieve well ordered films. Preliminary structural comparisons are also made between HWCVD and PECVD device layers.

  17. Progress in a-SiOx:H thin film solar cells with patterned MgF2 dielectric for top cell of multi-junction system

    NASA Astrophysics Data System (ADS)

    Kang, Dong-Won; Sichanugrist, Porponth; Konagai, Makoto

    2016-07-01

    We successfully designed and experimentally demonstrated an application of patterned MgF2 dielectric material at rear Al-doped ZnO (AZO)/Ag interface in thin film amorphous silicon oxide ( a-SiOx:H) solar cells. When it was realized in practical device process, MgF2 coverage with patterned morphology was employed to allow for current flow between the AZO and Ag against highly resistive MgF2 material. On the basis of the suggested structure, we found an improvement in quantum efficiency of the solar cells with the patterned MgF2. In addition, an enhancement of open circuit voltage ( V oc ) and fill factor ( FF) was observed. A remarkable increase in shunt resistance of the cells with the MgF2 would possibly indicate that the highly resistive MgF2 layer can partly suppress physical shunting across top and bottom electrodes caused by very thin absorber thickness of only 100 nm. The approach showed that our best-performing device revealed an essential improvement in conversion efficiency from 7.83 to 8.01% with achieving markedly high V oc (1.013 V) and FF (0.729). [Figure not available: see fulltext.

  18. Transparent conductive oxide layer with monolayer closed-pack Al-doped ZnO spheres and their application to a-Si thin-film solar cells.

    PubMed

    Lo, Shih-Shou; Lin, Chen-Yu; Jan, Der-Jun

    2011-09-15

    We report a new (to the best of our knowledge) transparent conductive oxide (TCO) layer with a monolayer of closed-pack Al-doped ZnO (AZO) spheres partly embedded in an AZO thin film. The average transmittance and haze ratio in the wavelength range of 380-800 nm achieves 65% and 55%, respectively, when AZO spheres with a diameter of 500 nm are embedded in a thickness of 240 nm AZO thin films. The a-Si thin-film solar cell with a regular p-i-n TCO structure is demonstrated. Under air mass 1.5 global illumination, conversion efficiencies of 5.6%, a fill factor of 0.55, V(oc) of 0.81 V, and a J(sc) of 2.44 mA/cm² are obtained. The Letter helps us to open up potential applications of a new TCO in advanced solar cells and light-emitting diodes.

  19. Design of a plasmonic back reflector using Ag nanoparticles with a mirror support for an a-Si:H solar cell

    NASA Astrophysics Data System (ADS)

    Hungerford, Chanse D.; Fauchet, Philippe M.

    2017-07-01

    Plasmonic nanoparticles have unique optical properties and these properties are affected by any surrounding structures, or lack thereof. Nanoparticles are often added to a device without fully assessing the effect that each interface will have on the nanoparticle's response. In this work, we simulate and fabricate devices utilizing hemispherical nanoparticles integrated into the back reflector of an amorphous silicon solar cell. 3D finite difference time domain simulations were used to calculate the optical absorption of a 300nm amorphous silicon layer as a function of the size of the nanoparticles, the distance between the nanoparticles and the active layer, and the distance between the nanoparticles and the mirror. Two transparent conducting oxides, aluminum doped zinc oxide and indium tin oxide, are investigated to determine the importance of the material properties between the nanoparticles and mirror. Silver hemispherical nanoparticles with a diameter of 150nm placed directly on the a-Si:H and a 60nm aluminum doped zinc oxide layer between the nanoparticles and the mirror lead to a maximum absorption increase of 7.2% in the 500nm to 800nm wavelength range. Experimental devices confirmed the trends predicted by theory but did not achieve enhancement, likely due to fabrication challenges. Fabricating a solar cell with the simulated design requires a high quality transparent conductive oxide and high control over the nanoparticle size distribution.

  20. Shape control of solar collectors using torsional shape memory alloy actuators

    SciTech Connect

    Lobitz, D.W.; Rice, T.M.; Grossman, J.W.

    1996-03-01

    Solar collectors that are focused on a central receiver are designed with a mechanism for defocusing the collector or disabling it by turning it out of the path of the sun`s rays. This is required to avoid damaging the receiver during periods of inoperability. In either of these two cases a fail-safe operation is very desirable where during power outages the collector passively goes to its defocused or deactivated state. This paper will be principally concerned with focusing and defocusing the collector in a fail-safe manner using shape memory alloy actuators. Shape memory alloys are well suited to this application in that once calibrated the actuators can be operated in an on/off mode using a small amount of electric power. Also, in contrast to other smart materials that were investigated for this application, shape memory alloys are capable of providing enough stroke at the appropriate force levels to focus the collector. In order to accommodate the large, nonlinear deformations required in the solar collector plate to obtain desired focal lengths, a torsional shape memory alloy actuator was developed that produces a stroke of 0.5 inches. Design and analysis details presented, along with comparisons to test data taken from an actual prototype, demonstrate that the collector can be repeatedly focused and defocused within accuracies required by typical solar energy systems.

  1. Investigation of Cd1-xMgxTe Alloys for Tandem Solar Cell Applications

    SciTech Connect

    Dhere, R.; Ramanathan, K.; Scharf, J.; Moutinho, H.; To, B.; Duda, A.; Noufi, R.

    2006-01-01

    Theoretical modeling of two-junction tandem solar cells shows that for optimal device performance, the bandgap of the top cell should be in the range of 1.6 to 1.8 eV. Cd{sub 1-x}Mg{sub x}Te (CMT) alloys have a lattice constant close to that of CdTe, and the addition of a small amount of Mg changes the bandgap considerably. In this paper, we present our work on developing CMT for solar cell applications. CMT films were prepared by vacuum deposition with co-evaporation of CdTe and Mg on substrates heated to 300-400 C. Films with a composition in the range of x=0 to 0.66 were fabricated, and optical analysis of the films showed that the bandgap of the samples ranged from 1.5 to 2.3 eV and varied linearly with composition. For the fabrication of devices using these alloy films, we also investigated the effect of post-deposition CdCI2 heat treatment. We have investigated junctions between CdS and CMT alloys in the bandgap range of 1.5 to 1.8 eV for tandem cell applications. We have also worked on the ohmic contacts to the CMT alloy films using Cu/Au bilayers, and the preliminary data shows a significant effect of the contact processing on the device performance. We present the results on the materials properties of these alloys and the effect of post deposition treatments on the film properties and device performance for different alloy compositions and compare them to similar CdTe devices to determine their applicability in tandem solar cell applications.

  2. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: The study of a new n/p tunnel recombination junction and its application in a-Si:H/μc-Si:H tandem solar cells

    NASA Astrophysics Data System (ADS)

    Li, Gui-Jun; Hou, Guo-Fu; Han, Xiao-Yan; Yuan, Yu-Jie; Wei, Chang-Chun; Sun, Jian; Zhao, Yin; Geng, Xin-Hua

    2009-04-01

    This paper reports that a double N layer (a-Si:H/μc-Si:H) is used to substitute the single microcrystalline silicon n layer (n-μc-Si:H) in n/p tunnel recombination junction between subcells in a-Si:H/μc-Si:H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current-voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si:H/μc-Si:H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.

  3. Results of some initial space qualification testing on triple junction a-Si and CuInSe2 thin film solar cells

    NASA Technical Reports Server (NTRS)

    Mueller, Robert L.; Anspaugh, Bruce E.

    1993-01-01

    A series of environmental tests were completed on one type of triple junction a-Si and two types of CuInSe2 thin film solar cells. The environmental tests include electron irradiation at energies of 0.7, 1.0, and 2.0 MeV, proton irradiation at energies of 0.115, 0.24, 0.3, 0.5, 1.0, and 3.0 MeV, post-irradiation annealing at temperatures between 20 C and 60 C, long term exposure to air mass zero (AM0) photons, measurement of the cells as a function of temperature and illumination intensity, and contact pull strength tests. As expected, the cells are very resistant to electron and proton irradiation. However, when a selected cell type is exposed to low energy protons designed to penetrate to the junction region, there is evidence of more significant damage. A significant amount of recovery was observed after annealing in several of the cells. However, it is not permanent and durable, but merely a temporary restoration, later nullified with additional irradiation. Contact pull strengths measured on the triple junction a-Si cells averaged 667 grams, and pull strengths measured on the Boeing CuInSe2 cells averaged 880 grams. Significant degradation of all cell types was observed after exposure to a 580 hour photon degradation test, regardless of whether the cells had been unirradiated or irradiated (electrons or protons). Although one cell from one manufacturer lost approximately 60 percent of its power after the photon test, several other cells from this manufacturer did not degrade at all.

  4. A Si photocathode protected and activated with a Ti and Ni composite film for solar hydrogen production.

    PubMed

    Lai, Yi-Hsuan; Park, Hyun S; Zhang, Jenny Z; Matthews, Peter D; Wright, Dominic S; Reisner, Erwin

    2015-03-02

    An efficient, stable and scalable hybrid photoelectrode for visible-light-driven H2 generation in an aqueous pH 9.2 electrolyte solution is reported. The photocathode consists of a p-type Si substrate layered with a Ti and Ni-containing composite film, which acts as both a protection and electrocatalyst layer on the Si substrate. The film is prepared by the simple drop casting of the molecular single-source precursor, [{Ti2(OEt)9(NiCl)}2] (TiNipre), onto the p-Si surface at room temperature, followed by cathodic in situ activation to form the catalytically active TiNi film (TiNicat). The p-Si|TiNicat photocathode exhibits prolonged hydrogen generation with a stable photocurrent of approximately -5 mA cm(-2) at 0 V vs. RHE in an aqueous pH 9.2 borate solution for several hours, and serves as a benchmark non-noble photocathode for solar H2 evolution that operates efficiently under neutral-alkaline conditions.

  5. A Si Photocathode Protected and Activated with a Ti and Ni Composite Film for Solar Hydrogen Production

    PubMed Central

    Lai, Yi-Hsuan; Park, Hyun S; Zhang, Jenny Z; Matthews, Peter D; Wright, Dominic S; Reisner, Erwin

    2015-01-01

    An efficient, stable and scalable hybrid photoelectrode for visible-light-driven H2 generation in an aqueous pH 9.2 electrolyte solution is reported. The photocathode consists of a p-type Si substrate layered with a Ti and Ni-containing composite film, which acts as both a protection and electrocatalyst layer on the Si substrate. The film is prepared by the simple drop casting of the molecular single-source precursor, [{Ti2(OEt)9(NiCl)}2] (TiNipre), onto the p-Si surface at room temperature, followed by cathodic in situ activation to form the catalytically active TiNi film (TiNicat). The p-Si|TiNicat photocathode exhibits prolonged hydrogen generation with a stable photocurrent of approximately −5 mA cm−2 at 0 V vs. RHE in an aqueous pH 9.2 borate solution for several hours, and serves as a benchmark non-noble photocathode for solar H2 evolution that operates efficiently under neutral–alkaline conditions. PMID:25650832

  6. High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells: Final Technical Report, 1 September 2001--6 March 2005

    SciTech Connect

    Deng, X.

    2006-01-01

    The objectives for the University of Toledo are to: (1) establish a transferable knowledge and technology base for fabricating high-efficiency triple-junction a-Si-based solar cells, and (2) develop high-rate deposition techniques for the growing a-Si-based and related alloys, including poly-Si, c-Si, a-SiGe, and a-Si films and photovoltaic devices with these materials.

  7. Solar Array Root Hinge Based on Shape Memory Alloy (SMA) Actuator

    NASA Astrophysics Data System (ADS)

    Blanc, Alain; Chassoulier, Damien; Champandard, Fabrice; Francois, Xavier

    2013-09-01

    The Solar Array Root Hinge based on Shape Memory Alloy actuator was designed and developed as a generic application for solar array of communication satelliteThe interest of this development was to implement for the first time at TAS level a low-cost, reliable and lightweight actuator technology for solar array deployment.This paper presents :- The design of the root hinge, including SMA actuator description- The development logic based ono Qualification status of the SMA actuatoro Delta design of the SP ACEBUS generic root hinge- The qualification test sequence (functional test, vibrations, TVAC)Results of a deployment test performed on ground at SMA rod, root hinge, then solar array level are presented.

  8. Investigation of Cd1-xMgxTe Alloys for Tandem Solar Cell Applications (Poster)

    SciTech Connect

    Dhere, R.; Ramanathan, K.; Scharf, J.; Moutinho, H.; To, B.; Duda, A.; Noufi, R.

    2006-05-01

    Fabrication and characterization of Cd{sub 1-x}Mg{sub x}Te(CMT) alloys and to determine their potential for device applications. Main emphasis is on the development of the devices in 1.5 to 1.8 eV range for the top cell of two-junction tandem solar cells. The conclusions are: (1) CMT alloy films with a wide composition range were fabricated; (2) the optical band gap shows a systematic variation with composition and CMT alloy films withstood the commonly used device processing steps for CdTe; and (3) they have fabricated cells with 5% efficiency in the energy gap range of 1.5 to 1.7 eV and established the viability of CMT for device applications.

  9. Investigation of Cd1-XMgxTe Alloys for Tandem Solar Cell Applications: Preprint

    SciTech Connect

    Dhere, R.; Ramanathan, K.; Scharf, J.; Moutinho, H.; To, B.; Duda, A.; Noufi, R.

    2006-05-01

    Theoretical modeling of two-junction tandem solar cells shows that for optimal device performance, the bandgap of the top cell should be in the range of 1.6 to 1.8 eV. Cd1-xMgxTe (CMT) alloys have a lattice constant close to that of CdTe, and the addition of a small amount of Mg changes the bandgap considerably. In this paper, we present our work on developing CMT for solar cell applications. CMT films were prepared by vacuum deposition with co-evaporation of CdTe and Mg on substrates heated to 300-400 C. Films with a composition in the range of x = 0 to 0.66 were fabricated, and optical analysis of the films showed that the bandgap of the samples ranged from 1.5 to 2.3 eV and varied linearly with composition. For the fabrication of devices using these alloy films, we also investigated the effect of post-deposition CdCl2 heat treatment. We have investigated junctions between CdS and CMT alloys in the bandgap range of 1.5 to 1.8 eV for tandem cell applications. We have also worked on the ohmic contacts to the CMT alloy films using Cu/Au bilayers, and the preliminary data shows a significant effect of the contact processing on the device performance.

  10. Fabrication and characterization of multiband solar cells based on highly mismatched alloys

    NASA Astrophysics Data System (ADS)

    López, N.; Braña, A. F.; García Núñez, C.; Hernández, M. J.; Cervera, M.; Martínez, M.; Yu, K. M.; Walukiewicz, W.; García, B. J.

    2015-10-01

    Multiband solar cells are one type of third generation photovoltaic devices in which an increase of the power conversion efficiency is achieved through the absorption of low energy photons while preserving a large band gap that determines the open circuit voltage. The ability to absorb photons from different parts of the solar spectrum originates from the presence of an intermediate energy band located within the band gap of the material. This intermediate band, acting as a stepping stone allows the absorption of low energy photons to transfer electrons from the valence band to the conduction band by a sequential two photons absorption process. It has been demonstrated that highly mismatched alloys offer a potential to be used as a model material system for practical realization of multiband solar cells. Dilute nitride GaAs1-xNx highly mismatched alloy with low mole fraction of N is a prototypical multiband semiconductor with a well-defined intermediate band. Currently, we are using chemical beam epitaxy to synthesize dilute nitride highly mismatched alloys. The materials are characterized by a variety of structural and optical methods to optimize their properties for multiband photovoltaic devices.

  11. Measured and Simulated Dark J-V Characteristics of a-Si:H Single Junction p-i-n Solar Cells Irradiated with 40 keV Electrons

    NASA Technical Reports Server (NTRS)

    Lord, Kenneth; Woodyard, James R.

    2002-01-01

    The effect of 40 keV electron irradiation on a-Si:H p-i-n single-junction solar cells was investigated using measured and simulated dark J-V characteristics. EPRI-AMPS and PC-1D simulators were explored for use in the studies. The EPRI-AMPS simulator was employed and simulator parameters selected to produce agreement with measured J-V characteristics. Three current mechanisms were evident in the measured dark J-V characteristics after electron irradiation, namely, injection, shunting and a term of the form CV(sup m). Using a single discrete defect state level at the center of the band gap, good agreement was achieved between measured and simulated J-V characteristics in the forward-bias voltage region where the dark current density was dominated by injection. The current mechanism of the form CV(sup m) was removed by annealing for two hours at 140 C. Subsequent irradiation restored the CV(sup m) current mechanism and it was removed by a second anneal. Some evidence of the CV(sup m) term is present in device simulations with a higher level of discrete density of states located at the center of the bandgap.

  12. Large-area, triple-junction a-Si alloy production scale-up. Semiannual technical progress report, 17 March 1992--18 September 1992

    SciTech Connect

    Oswald, R.; O`Dowd, J.

    1993-04-01

    This report describes Solarex`s work to advance its photovoltaic manufacturing technologies, reduce its a-Si:H module production costs, increase module performance, and expand the Solarex commercial production capacity. Solarex will meet these objectives by improving the deposition and quality of the transport front contact; optimizing the laser patterning process; scaling up the semiconductor deposition process; improving the back-contact deposition; and scaling up and improving the encapsulation and testing of its a-Si:H modules. In the Phase 1 portion of this subcontract, Solarex focused on scaling up components of the chemical vapor deposition system for deposition of the system contact, scaling up laser scribing techniques; triple-junction recipes for module production; and metal-oxide back contacts. The goal of these efforts is to adopt all portions of the manufacturing line to handle substrates larger than 0.37 m{sup 2}.

  13. Energy loss process analysis for radiation degradation and immediate recovery of amorphous silicon alloy solar cells

    NASA Astrophysics Data System (ADS)

    Sato, Shin-ichiro; Beernink, Kevin; Ohshima, Takeshi

    2015-06-01

    Performance degradation of a-Si/a-SiGe/a-SiGe triple-junction solar cells due to irradiation of silicon ions, electrons, and protons are investigated using an in-situ current-voltage measurement system. The performance recovery immediately after irradiation is also investigated. Significant recovery is always observed independent of radiation species and temperature. It is shown that the characteristic time, which is obtained by analyzing the short-circuit current annealing behavior, is an important parameter for practical applications in space. In addition, the radiation degradation mechanism is discussed by analyzing the energy loss process of incident particles (ionizing energy loss: IEL, and non-ionizing energy loss: NIEL) and their relative damage factors. It is determined that ionizing dose is the primarily parameter for electron degradation whereas displacement damage dose is the primarily parameter for proton degradation. This is because the ratio of NIEL to IEL in the case of electrons is small enough to be ignored the damage due to NIEL although the defect creation ratio of NIEL is much larger than that of IEL in the cases of both protons and electrons. The impact of “radiation quality effect” has to be considered to understand the degradation due to Si ion irradiation.

  14. Large-area triple-junction a-Si alloy production scaleup. Annual subcontract report, 17 March 1993--18 March 1994

    SciTech Connect

    Oswald, R.; Morris, J.

    1994-11-01

    The objective of this subcontract over its three-year duration is to advance Solarex`s photovoltaic manufacturing technologies, reduce its a-Si:H module production costs, increase module performance and expand the Solarex commercial production capacity. Solarex shall meet these objectives by improving the deposition and quality of the transparent front contact, by optimizing the laser patterning process, scaling-up the semiconductor deposition process, improving the back contact deposition, scaling-up and improving the encapsulation and testing of its a-Si:H modules. In the Phase 2 portion of this subcontract, Solarex focused on improving deposition of the front contact, investigating alternate feed stocks for the front contact, maximizing throughput and area utilization for all laser scribes, optimizing a-Si:H deposition equipment to achieve uniform deposition over large-areas, optimizing the triple-junction module fabrication process, evaluating the materials to deposit the rear contact, and optimizing the combination of isolation scribe and encapsulant to pass the wet high potential test. Progress is reported on the following: Front contact development; Laser scribe process development; Amorphous silicon based semiconductor deposition; Rear contact deposition process; Frit/bus/wire/frame; Materials handling; and Environmental test, yield and performance analysis.

  15. Strategies to Suppress Cation Vacancies in Metal Oxide Alloys: Consequences for Solar Energy Conversion

    SciTech Connect

    Toroker, Maytal; Carter, Emily A.

    2015-09-01

    First-row transition metal oxides (TMOs) are promising alternative materials for inexpensive and efficient solar energy conversion. However, their conversion efficiency can be deleteriously affected by material imperfections, such as atomic vacancies. In this work, we provide examples showing that in some iron-containing TMOs, iron cation vacancy formation can be suppressed via alloying. We calculate within density functional theory+U theory the iron vacancy formation energy in binary rock-salt oxide alloys that contain iron, manganese, nickel, zinc, and/or magnesium. We demonstrate that formation of iron vacancies is less favorable if we choose to alloy iron(II) oxide with metals that cannot readily accept vacancy-generated holes, e.g., magnesium, manganese, nickel, or zinc. Since there are less available sites for holes and the holes are forced to reside on iron cations, the driving force for iron vacancy formation decreases. These results are consistent with an experiment observing a sharp drop in cation vacancy concentration upon alloying iron(II) oxide with manganese.

  16. Transparent nickel selenide alloy counter electrodes for bifacial dye-sensitized solar cells exceeding 10% efficiency.

    PubMed

    Duan, Yanyan; Tang, Qunwei; He, Benlin; Li, Ru; Yu, Liangmin

    2014-11-07

    In the current work, we report a series of bifacial dye-sensitized solar cells (DSSCs) that provide power conversion efficiencies of more than 10% from bifacial irradiation. The device comprises an N719-sensitized TiO2 anode, a transparent nickel selenide (Ni-Se) alloy counter electrode (CE), and liquid electrolyte containing I(-)/I3(-) redox couples. Because of the high optical transparency, electron conduction ability, electrocatalytic activity of Ni-Se CEs, as well as dye illumination, electron excitation and power conversion efficiency have been remarkably enhanced. Results indicate that incident light from a transparent CE has a compensation effect to the light from the anode. The impressive efficiency along with simple preparation of the cost-effective Ni-Se alloy CEs highlights the potential application of bifacial illumination technique in robust DSSCs.

  17. Recovery of Pb-Sn Alloy and Copper from Photovoltaic Ribbon in Spent Solar Module

    NASA Astrophysics Data System (ADS)

    Lee, Jin-Seok; Ahn, Young-Soo; Kang, Gi-Hwan; Wang, Jei-Pil

    2017-09-01

    This research was attempted to recover metal alloy and copper from photovoltaic ribbon (PV ribbon) of spent solar module by means of thermal treatment. In this study, thermal method newly proposed was applied to remove coating layer composed of tin and lead and separate copper substrate. Using thermal treatment under reductive gas atmosphere with CH4 gas coating layer was easily melted down at the range of temperature of 700 °C to 800 °C. In the long run, metal alloy and copper substrate were successfully obtained and their chemical compositions were examined by inductively coupled plasma mass spectrometry (ICP-MS), scanning electron microscopy (SEM) and energy dispersive x-ray Spectroscopy (EDS).

  18. Cost-effective, transparent iron selenide nanoporous alloy counter electrode for bifacial dye-sensitized solar cell

    NASA Astrophysics Data System (ADS)

    Liu, Juan; Tang, Qunwei; He, Benlin; Yu, Liangmin

    2015-05-01

    Pursuit of cost-effective and efficient counter electrodes (CEs) is a persistent objective for dye-sensitized solar cells (DSSCs). We present here the design of transparent Fe-Se nanoporous alloy CEs for bifacial DSSC applications. Due to the superior charge-transfer ability for I-/I3- redox couples, electrocatalytic reduction toward I3- species, and optical transparency in visible-light region, the bifacial DSSC with FeSe alloy electrode yields maximum front and rear efficiencies of 9.16% and 5.38%, respectively. A fast start-up, high multiple start capability, and good stability of the FeSe alloy CE demonstrate the potential applications in driving solar panels. The impressive efficiency along with simple preparation of the cost-effective Fe-Se nanoporous alloy CEs highlights their potential application in robust bifacial DSSCs.

  19. Identifying electronic properties relevant to improving stability in a-Si:H-based cells and overall performance in a-Si,Ge:H-based cells. Annual subcontract report, 18 April 1995--17 April 1996

    SciTech Connect

    Cohen, J.D.

    1997-03-01

    The work done during this second phase of the University of Oregon`s NREL subcontract focused on degradation studies in both pure a-Si:H and a-Si,Ge:H alloys, as well as a detailed study of the interface between these two materials in a-Si:H/a-Si, Ge:H heterostructures. All samples discussed in this report were produced by the glow-discharge method and were obtained either in collaboration with United Solar Systems Corporation or with researchers at Lawrence Berkeley laboratory. First, the results from the a-Si, Ge:H degradation studies support the conclusion that considerable quantities of charged defects exist in nominally intrinsic material. Researchers found that on light-soaking, all the observed defect sub-bands increased; however, their ratios varied significantly. Second, researchers performed voltage pulse stimulated capacitance transient measurements on a-Si:H/a-Si, Ge:H heterostructure samples and found a clear signature of trapped hole emission extending over long times. Finally, researchers began comparison studies of the electronic properties of a-Si:H grown by glow discharge either with 100% silane, or with silane diluted in H{sub 2} or He gas. The results on these samples indicate that the films grown under high hydrogen dilution exhibit roughly a factor of 3 lower deep defect densities than those grown using pure silane.

  20. Continuous roll-to-roll serpentine deposition for high throughput a-Si PV manufacturing

    SciTech Connect

    Izu, M.; Ovshinsky, H.C.; Deng, X.; Krisko, A.J.; Narasimhan, K.L.; Crucet, R.; Laarman, T.; Myatt, A.; Ovshinsky, S.R.

    1994-12-31

    In order to further improve the economies of scale which are inherent in ECD`s continuous roll-to-roll amorphous silicon alloy solar cell manufacturing process, the authors have developed a concept for a serpentine web plasma CVD deposition process to maximize throughput while keeping the size of the deposition chambers small. When this technique is incorporated into a continuous roll-to-roll PV manufacturing process, it will maximize the throughput for a high volume production plant, reduce the machine cost, improve gas utilization, reduce power consumption, and improve the solar cell stability. To demonstrate the serpentine web deposition concept, the authors have constructed a single loop serpentine deposition chamber to deposit a-Si for n-i-p structure solar cells. During the initial process of optimization, they have produced single-junction a-Si solar cells with 8.6% efficiency, and triple-junction a-Si solar cells with a 9.5% initial efficiency, where the top cell intrinsic layer was deposited in the serpentine deposition chamber.

  1. Identification of the Chemical Bonding Prompting Adhesion of a-C:H Thin Films on Ferrous Alloy Intermediated by a SiCx:H Buffer Layer.

    PubMed

    Cemin, F; Bim, L T; Leidens, L M; Morales, M; Baumvol, I J R; Alvarez, F; Figueroa, C A

    2015-07-29

    Amorphous carbon (a-C) and several related materials (DLCs) may have ultralow friction coefficients that can be used for saving-energy applications. However, poor chemical bonding of a-C/DLC films on metallic alloys is expected, due to the stability of carbon-carbon bonds. Silicon-based intermediate layers are employed to enhance the adherence of a-C:H films on ferrous alloys, although the role of such buffer layers is not yet fully understood in chemical terms. The chemical bonding of a-C:H thin films on ferrous alloy intermediated by a nanometric SiCx:H buffer layer was analyzed by X-ray photoelectron spectroscopy (XPS). The chemical profile was inspected by glow discharge optical emission spectroscopy (GDOES), and the chemical structure was evaluated by Raman and Fourier transform infrared spectroscopy techniques. The nature of adhesion is discussed by analyzing the chemical bonding at the interfaces of the a-C:H/SiCx:H/ferrous alloy sandwich structure. The adhesion phenomenon is ascribed to specifically chemical bonding character at the buffer layer. Whereas carbon-carbon (C-C) and carbon-silicon (C-Si) bonds are formed at the outermost interface, the innermost interface is constituted mainly by silicon-iron (Si-Fe) bonds. The oxygen presence degrades the adhesion up to totally delaminate the a-C:H thin films. The SiCx:H deposition temperature determines the type of chemical bonding and the amount of oxygen contained in the buffer layer.

  2. Platinum Alloy Tailored All-Weather Solar Cells for Energy Harvesting from Sun and Rain.

    PubMed

    Tang, Qunwei; Duan, Yanyan; He, Benlin; Chen, Haiyan

    2016-11-07

    Solar cells that can harvest energy in all weathers are promising in solving the energy crisis and environmental problems. The power outputs are nearly zero under dark conditions for state-of-the-art solar cells. To address this issue, we present herein a class of platinum alloy (PtMx , M=Ni, Fe, Co, Cu, Mo) tailored all-weather solar cells that can harvest energy from rain and realize photoelectric conversion under sun illumination. By tuning the stoichiometric Pt/M ratio and M species, the optimized solar cell yields a photoelectric conversion efficiency of 10.38 % under simulated sunlight irradiation (AM 1.5, 100 mW cm(-2) ) as well as current of 3.90 μA and voltage of 115.52 μV under simulated raindrops. Moreover, the electric signals are highly dependent on the dripping velocity and the concentration of simulated raindrops along with concentrations of cation and anion. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Transparent metal selenide alloy counter electrodes for high-efficiency bifacial dye-sensitized solar cells.

    PubMed

    Duan, Yanyan; Tang, Qunwei; Liu, Juan; He, Benlin; Yu, Liangmin

    2014-12-22

    The exploration of cost-effective and transparent counter electrodes (CEs) is a persistent objective in the development of bifacial dye-sensitized solar cells (DSSCs). Transparent counter electrodes based on binary-alloy metal selenides (M-Se; M=Co, Ni, Cu, Fe, Ru) are now obtained by a mild, solution-based method and employed in efficient bifacial DSSCs. Owing to superior charge-transfer ability for the I(-) /I3 (-) redox couple, electrocatalytic activity toward I3 (-) reduction, and optical transparency, the bifacial DSSCs with CEs consisting of a metal selenide alloy yield front and rear efficiencies of 8.30 % and 4.63 % for Co0.85 Se, 7.85 % and 4.37 % for Ni0.85 Se, 6.43 % and 4.24 % for Cu0.50 Se, 7.64 % and 5.05 % for FeSe, and 9.22 % and 5.90 % for Ru0.33 Se in comparison with 6.18 % and 3.56 % for a cell with an electrode based on pristine platinum, respectively. Moreover, fast activity onset, high multiple start/stop capability, and relatively good stability demonstrate that these new electrodes should find applications in solar panels.

  4. Experimental study of the factors governing the Staebler-Wronski photodegradation effect in a-Si:H solar cells. Annual subcontract report 1 April 1995--30 June 1996

    SciTech Connect

    Han, D.

    1996-10-01

    This report describes continuing experiments on electroluminescence (EL), field profile, and H-microstructure studies of a-Si:H-based solar cells and materials. By using EL spectroscopy, we observed that both the band-tail width and the defect energy distribution are narrowed by H-dilution. We demonstrated the existence of the `fast` and `slow` defects in the cell performance and identified their energy positions as a {approx}0.9 eV and a {approx}0.75 eV defect EL band. Our results also reinforced the notion that H-dilution eliminates the microstructure that causes the creation of `slow` defects and hence stabilizes rapidly under light illumination. We demonstrated that the internal-electric field profile of a-Si:H p-i-n structures can be measured by the transient-null-current method. For the first time, hot-wire-deposited a-Si:H films were characterized by {sup 1}H nuclear magnetic resonance. Surprisingly, about 90 percent of the H atoms give rise to the 50-kHz line, and only a very small percentage of the H atoms give rise to the 3-kHz-narrower resonance line, which suggests that H-bonding in hot-wire films is very different from that in a-Si:H produced by plasma-enhanced chemical vapor deposition.

  5. Post-annealing effects on the electrochemical performance of a Si/TiSi2 heteronanostructured anode material prepared by mechanical alloying

    NASA Astrophysics Data System (ADS)

    Shin, Min-Seon; Lee, Taeg-Woo; Park, Jung-Bae; Lim, Sung-Hwan; Lee, Sung-Man

    2017-03-01

    A change in the microstructure of Ti-Si alloys synthesized by high-energy mechanical milling through post-annealing significantly enhances their electrochemical performances as anode materials for lithium-ion batteries (LIBs). The microstructures of ball-milled and post-annealed powders are investigated using high-resolution transmission electron microscopy (HR-TEM). The Si phase is uniformly distributed on the silicide (TiSi2) matrix. The individual Si domains of the mechanical alloying (MA) sample consist of amorphous and crystalline regions with a diffuse interface between the two phases. When MA powder is annealed at 600 °C, the Si phase has a well-developed nanocrystalline microstructure: a multi-grain structure with random orientation of nanometric crystal domains. Annealing at 600 °C causes a significant improvement in electrochemical performance parameters like cycling stability and rate capability. However, when annealed at 800 °C, the electrochemical performances deteriorate due to an increase in the size of Si domains.

  6. Stable, high-efficiency amorphous-silicon solar cells with low hydrogen content. Final subcontract report, 1 March 1991--31 March 1993

    SciTech Connect

    Hegedus, S.S.; Phillips, J.E.

    1993-08-01

    This report describes a 21-month project to demonstrate amorphous-silicon (a-Si) solar cells with high stabilized conversion efficiency. The objective was to develop a research program spanning material issues (more stable a-Si and better a-SiGe alloys) and device issues (more stable a-Si-based solar cells) with the goal of high stabilized solar cell efficiency. The Institute of Energy Conversion (IEC) produced and analyzed the stability of a-Si films and solar cells with reduced hydrogen content (2--6%). A thermodynamic model of defect formation was developed that describes the high-temperature degraded state of a solar cell. An analysis of bifacial current voltage and quant-efficiency insults for a-SiGe p-i-n devices with transparent front and back contacts provided information about the influence of alloying and band-gap grading on hole and electron collection. IEC also studied the stability of graded and ungraded a-SiGe solar cells using bifacial devices to learn about the relative degradation of hole and electron collection, and concludes that degradation of the photoconductivity of a-SiGe materials does not agree with degradation observed in solar cells.

  7. Counter electrodes from polymorphic platinum-nickel hollow alloys for high-efficiency dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Wang, Jing; Tang, Qunwei; He, Benlin; Yang, Peizhi

    2016-10-01

    Precious platinum counter electrode (CE) has been an economic burden for future commercialization of dye-sensitized solar cells (DSSCs). Low-platinum alloy CE catalysts are promising in bringing down the solar cell cost without reducing photovoltaic performances. We present here a facile strategy of fabricating ZnO nanorods assisted platinum-nickel (PtNi) alloy microtube CEs for liquid-junction DSSCs. By adjusting the concentration of zinc precursors, the ZnO nanostructures and therefore PtNi alloys are optimized to maximize the electrocatalytic behaviors toward triiodide reduction reaction. The maximal power conversion efficiency is determined as high as 8.43% for liquid-junction DSSC device with alloyed PtNi microtube CE synthesized at 75 mM Zn(NO3)2 aqueous solution, yielding a 32.8% enhancement in cell efficiency in comparison with the solar cell from pristine platinum electrode. Moreover, the dissolution resistance and charge-transfer ability toward redox couples have also been markedly enhanced due to competitive dissolution reactions and alloyed effects.

  8. The effects of a SiO2 coating on the corrosion parameters cpTi and Ti-6Al-7Nb alloy.

    PubMed

    Basiaga, Marcin; Walke, Witold; Paszenda, Zbigniew; Karasiński, Paweł; Szewczenko, Janusz

    2014-01-01

    The aim of this paper was to evaluate the usefulness of the sol-gel method application, to modificate the surface of the Ti6Al7Nb alloy and the cpTi titanium (Grade 4) with SiO2 oxide, applied on the vascular implants to improve their hemocompatibility. Mechanical treatment was followed by film deposition on surface of the titanium samples. An appropriate selection of the process parameters was verified in the studies of corrosion, using potentiodynamic and impedance method. A test was conducted in the solution simulating blood vessels environment, in simulated body fluid at t = 37.0 ± 1 °C and pH = 7.0 ± 0.2. Results showed varied electrochemical properties of the SiO2 film, depending on its deposition parameters. Correlations between corrosion resistance and layer adhesion to the substrate were observed, depending on annealing temperature.

  9. The effects of a SiO2 coating on the corrosion parameters cpTi and Ti-6Al-7Nb alloy

    PubMed Central

    Basiaga, Marcin; Walke, Witold; Paszenda, Zbigniew; Karasiński, Paweł; Szewczenko, Janusz

    2014-01-01

    The aim of this paper was to evaluate the usefulness of the sol-gel method application, to modificate the surface of the Ti6Al7Nb alloy and the cpTi titanium (Grade 4) with SiO2 oxide, applied on the vascular implants to improve their hemocompatibility. Mechanical treatment was followed by film deposition on surface of the titanium samples. An appropriate selection of the process parameters was verified in the studies of corrosion, using potentiodynamic and impedance method. A test was conducted in the solution simulating blood vessels environment, in simulated body fluid at t = 37.0 ± 1 °C and pH = 7.0 ± 0.2. Results showed varied electrochemical properties of the SiO2 film, depending on its deposition parameters. Correlations between corrosion resistance and layer adhesion to the substrate were observed, depending on annealing temperature. PMID:25482412

  10. Efficiency and throughput advances in continuous roll-to-roll a-Si alloy PV manufacturing technology: Annual technical progress report: 22 June 1998--21 June 1999

    SciTech Connect

    Izu, M.

    1999-11-09

    This document reports on work performed by Energy Conversion Devices, Inc. (ECD) during Phase 1 of this subcontract. During this period, ECD researchers: (1) Completed design and construction of new, improved substrate heater; (2) Tested and verified improved performance of the new substrate heater in the pilot machine; (3) Verified improved performance of the new substrate heater in the production machine; (4) Designed and bench-tested a new infrared temperature sensor; (5) Installed a prototype new infrared temperature sensor in the production machine for evaluation; (6) Designed a new rolling thermocouple temperature sensor; (7) Designed and bench-tested a reflectometer for the backreflector deposition machine; (8) Designed and bench-tested in-line non-contacting cell diagnostic sensor and PV capacitive diagnostic system; (9) Installed the in-line cell diagnostic sensor in the 5-MW a-Si deposition machine for evaluation; (10) Demonstrated a new low-cost zinc metal process in the pilot back reflector machine; and (11) Fully tested a new cathode design for improved uniformity.

  11. Electronic structures and optical properties of α-Fe2O3-xSex alloys for solar absorber

    NASA Astrophysics Data System (ADS)

    Xia, Congxin; Jia, Yu; Zhang, Qiming

    2015-05-01

    The band structures and optical properties of α-Fe2O3-xSex alloys are studied by means of first-principles methods, considering different Se contents x. Numerical results show that Se content has an obvious influence on band structures and optical properties of α-Fe2O3-xSex alloys. The band gap values of α-Fe2O3-xSex alloys decrease monotonically when Se concentrations increase, resulting in an obvious increase of the optical absorption edge in the visible range. In particular, our results show that α-Fe2O3-xSex alloys have the direct band gap properties with band gap values when Se content x ≈ 0.17, which is beneficial to solar cell applications.

  12. Al-Si alloy point contact formation and rear surface passivation for silicon solar cells using double layer porous silicon

    NASA Astrophysics Data System (ADS)

    Moumni, Besma; Ben Jaballah, Abdelkader; Bessais, Brahim

    2012-10-01

    Lowering the rear surface recombination velocities by a dielectric layer has fascinating advantages compared with the standard fully covered Al back-contact silicon solar cells. In this work the passivation effect by double layer porous silicon (PS) (wide band gap) and the formation of Al-Si alloy in narrow p-type Si point contact areas for rear passivated solar cells are analysed. As revealed by Fourier transform infrared spectroscopy, we found that a thin passivating aluminum oxide (Al2O3) layer is formed. Scanning electron microscopy analysis performed in cross sections shows that with bilayer PS, liquid Al penetrates into the openings, alloying with the Si substrate at depth and decreasing the contact resistivity. At the solar cell level, the reduction in the contact area and resistivity leads to a minimization of the fill factor losses.

  13. ADVANCED THIN-FILM SOLAR CELLS.

    DTIC Science & Technology

    SEMICONDUCTING FILMS), (* SOLAR CELLS , MANUFACTURING, GALLIUM ALLOYS, ARSENIC ALLOYS, PLATINUM, OXIDES, TRANSPORT PROPERTIES, MOLYBDENUM, METAL FILMS, COPPER, HYDROGEN, GERMANIUM ALLOYS, TIN ALLOYS, ZINC, CRYSTAL GROWTH.

  14. Boiling behavior of sodium-potassium alloy in a bench-scale solar receiver

    NASA Astrophysics Data System (ADS)

    Moreno, J. B.; Andraka, C. E.; Moss, T. A.

    During 1989-90, a 75-kW(sub t) sodium reflux pool-boiler solar receiver was successfully demonstrated at Sandia National Laboratories. Significant features of this receiver include the following: (1) boiling sodium as the heat transfer medium, and (2) electric-discharge-machined (EDM) cavities as artificial nucleation sites to stabilize boiling. Since this first demonstration, design of a second-generation pool-boiler receiver that will bring the concept closer to commercialization has begun. For long life, the new receiver uses Haynes Alloy 230. For increased safety factors against film boiling and flooding, it has a refined shape and somewhat larger dimensions. To eliminate the need for trace heating, the receiver will boil the sodium-potassium alloy NaK-78 instead of sodium. To reduce manufacturing costs, it will use one of a number of alternatives to EDM cavities for stabilization of boiling. To control incipient-boiling superheats, especially during hot restarts, it will contain a small amount of inert gas. Before the new receiver design could be finalized, bench-scale tests of some of the proposed changes were necessary. A series of bench-scale pool boilers were built from Haynes Alloy 230 and filled with NaK-78. Various boiling-stabilizer candidates were incorporated into them, including laser-drilled cavities and a number of different sintered-powder-metal coatings. These bench-scale pool boilers have been operated at temperatures up to 750 C, heated by quartz lamps with incident radiant fluxes up to 95 W/sq cm. The effects of various orientations and added gases have been studied. Results of these studies are presented.

  15. Boiling behavior of sodium-potassium alloy in a bench-scale solar receiver

    SciTech Connect

    Moreno, J.B.; Andraka, C.E.; Moss, T.A.

    1992-01-01

    During 1989-90, a 75-kW{sub t} sodium reflux pool-boiler solar receiver was successfully demonstrated at Sandia National Laboratories. Significant features of this receiver include (1) boiling sodium as the heat transfer medium and (2) electric-discharge-machined (EDM) cavities as artificial nucleation sites to stabilize boiling. Since this first demonstration, design of a second-generation pool-boiler receiver that will bring the concept closer to commercialization has begun. For long life, the new receiver uses Haynes Alloy 230. For increased safety factors against film boiling and flooding, it has a refined shape and somewhat larger dimensions. To eliminate the need for trace heating, the receiver will boil the sodium-potassium alloy NaK-78 instead of sodium. To reduce manufacturing costs, it will use one of a number of alternatives to EDM cavities for stabilization of boiling. To control incipient-boiling superheats, especially during hot restarts, it will contain a small amount of inert gas. Before the new receiver design could be finalized, bench-scale tests of some of the proposed changes were necessary. A series of bench-scale pool boilers were built from Haynes Alloy 230 and filled with NaK-78. Various boiling-stabilizer candidates were incorporated into them, including laser-drilled cavities and a number of different sintered-powder-metal coatings. These bench-scale pool boilers have been operated at temperatures up to 750{degree}C, heated by quartz lamps with incident radiant fluxes up to 95 W/cm{sup 2}. The effects of various orientations and added gases have been studied. results of these studies are presented. 15 refs.

  16. Boiling behavior of sodium-potassium alloy in a bench-scale solar receiver

    SciTech Connect

    Moreno, J.B.; Andraka, C.E.; Moss, T.A.

    1992-07-01

    During 1989-90, a 75-kW{sub t} sodium reflux pool-boiler solar receiver was successfully demonstrated at Sandia National Laboratories. Significant features of this receiver include (1) boiling sodium as the heat transfer medium and (2) electric-discharge-machined (EDM) cavities as artificial nucleation sites to stabilize boiling. Since this first demonstration, design of a second-generation pool-boiler receiver that will bring the concept closer to commercialization has begun. For long life, the new receiver uses Haynes Alloy 230. For increased safety factors against film boiling and flooding, it has a refined shape and somewhat larger dimensions. To eliminate the need for trace heating, the receiver will boil the sodium-potassium alloy NaK-78 instead of sodium. To reduce manufacturing costs, it will use one of a number of alternatives to EDM cavities for stabilization of boiling. To control incipient-boiling superheats, especially during hot restarts, it will contain a small amount of inert gas. Before the new receiver design could be finalized, bench-scale tests of some of the proposed changes were necessary. A series of bench-scale pool boilers were built from Haynes Alloy 230 and filled with NaK-78. Various boiling-stabilizer candidates were incorporated into them, including laser-drilled cavities and a number of different sintered-powder-metal coatings. These bench-scale pool boilers have been operated at temperatures up to 750{degree}C, heated by quartz lamps with incident radiant fluxes up to 95 W/cm{sup 2}. The effects of various orientations and added gases have been studied. results of these studies are presented. 15 refs.

  17. A branching NiCuPt alloy counter electrode for high-efficiency dye-sensitized solar cell

    NASA Astrophysics Data System (ADS)

    Yang, Peizhi; Tang, Qunwei

    2016-01-01

    A rising objective for high-efficiency dye-sensitized solar cells (DSSCs) is to create extraordinary and cost-effective counter electrode (CE) electrocatalysts. We present here a branching NiCuPt alloy CE synthesized by electrodepositing Ni on ZnO microrod templates and subsequently growing branched Cu as well as suffering from a galvanic displacement for Pt uptake. The resultant NiCuPt alloy CE displays a promising electrocatalytic activity toward redox electrolyte having I-/I3- couples. An impressive power conversion efficiency of 9.66% is yielded for the liquid-junction DSSC platform.

  18. Absorption Enhancement in "Giant" Core/Alloyed-Shell Quantum Dots for Luminescent Solar Concentrator.

    PubMed

    Zhao, Haiguang; Benetti, Daniele; Jin, Lei; Zhou, Yufeng; Rosei, Federico; Vomiero, Alberto

    2016-10-01

    Luminescent solar concentrators (LSCs) can potentially reduce the cost of solar cells by decreasing the photoactive area of the device and boosting the photoconversion efficiency (PCE). This study demonstrates the application of "giant" CdSe/Cdx Pb1-x S core/shell quantum dots (QDs) as light harvesters in high performance LSCs with over 1.15% PCE. Pb addition is critical to maximize PCE. First, this study synthesizes "giant" CdSe/Cdx Pb1-x S QDs with high quantum yield (40%), narrow size distribution (<10%), and stable photoluminescence in a wide temperature range (100-300 K). Subsequently these thick alloyed-shell QDs are embedded in a polymer matrix, resulting in a highly transparent composite with absorption spectrum covering the range 300-600 nm, and are applied as active material for prototype LSCs. The latter exhibits a 15% enhancement in efficiency with respect to 1% PCE of the pure-CdS-shelled QDs. This study attributes this increase to the contribution of Pb doping. The results demonstrate a straightforward approach to enhance light absorption in "giant" QDs by metal doping, indicating a promising route to broaden the absorption spectrum and increase the efficiency of LSCs.

  19. Control of back surface reflectance from aluminum alloyed contacts on silicon solar cells

    SciTech Connect

    Cudzinovic, M.; Sopori, B.

    1996-05-01

    A process for forming highly reflective aluminum back contacts with low contact resistance to silicon solar cells is described. By controlling the process conditions, it is possible to vary the silicon/aluminum interface from a specular to a diffuse reflector while maintaining a high interface reflectance. The specular interface is found to be a uniform silicon/aluminum alloy layer a few angstroms thick that has epitaxially regrown on the silicon. The diffuse interface consists of randomly distributed (111) pyramids produced by crystallographic out-diffusion of the bulk silicon. The light trapping ability of the diffuse contact is found to be close to the theoretical limit. Both types of contacts are found to have specific contact resistivities of 10{sup {minus}5} {Omega}-cm{sup 2}. The process for forming the contacts involves illuminating the devices with tungsten halogen lamps. The process is rapid (under 100 s) and low temperature (peak temperature < 580{degrees}C), making it favorable for commercial solar cell fabrication.

  20. Low-cost counter electrodes from CoPt alloys for efficient dye-sensitized solar cells.

    PubMed

    He, Benlin; Meng, Xin; Tang, Qunwei

    2014-04-09

    Dye-sensitized solar cell (DSSC) is a promising solution to global energy and environmental problems because of its merits on clean, low cost, high efficiency, good durability, and easy fabrication. However, the commercial application of DSSCs has been hindered by the high expenses of counter electrodes (CEs) and limited power conversion efficiency. With an aim of significantly enhancing the power conversion efficiency, here we pioneerly synthesize CoPt alloys using an electrochemically codeposition technique which are employed as CEs for DSSCs. Owing to the rapid charge transfer, electrical conduction, and electrocatalysis, power conversion efficiencies of CoPt-based DSSCs have been markedly elevated in comparison with the DSSC using Pt CE. The DSSC employing CoPt0.02 alloy CE gives an impressive power conversion efficiency of 10.23%. The high conversion efficiency, low cost in combination with simple preparation, and scalability demonstrates the potential use of CoPt alloys in robust DSSCs.

  1. Broadband light absorption enhancement in dye-sensitized solar cells with Au-Ag alloy popcorn nanoparticles.

    PubMed

    Xu, Qi; Liu, Fang; Liu, Yuxiang; Cui, Kaiyu; Feng, Xue; Zhang, Wei; Huang, Yidong

    2013-01-01

    In this paper, we present an investigation on the use of Au-Ag alloy popcorn-shaped nanoparticles (NPs) to realise the broadband optical absorption enhancement of dye-sensitized solar cells (DSCs). Both simulation and experimental results indicate that compared with regular plasmonic NPs, such as nano-spheres, irregular popcorn-shaped alloy NPs exhibit absorption enhancement over a broad wavelength range due to the excitation of localized surface plasmons (LSPs) at different wavelengths. The power conversion efficiency (PCE) of DSCs is enhanced by 16% from 5.26% to 6.09% by incorporating 2.38 wt% Au-Ag alloy popcorn NPs. Moreover, by adding a scattering layer on the exterior of the counter electrode, the popcorn NPs demonstrate an even stronger ability to increase the PCE by 32% from 5.94% to 7.85%, which results from the more efficient excitation of the LSP mode on the popcorn NPs.

  2. Broadband light absorption enhancement in dye-sensitized solar cells with Au-Ag alloy popcorn nanoparticles

    NASA Astrophysics Data System (ADS)

    Xu, Qi; Liu, Fang; Liu, Yuxiang; Cui, Kaiyu; Feng, Xue; Zhang, Wei; Huang, Yidong

    2013-07-01

    In this paper, we present an investigation on the use of Au-Ag alloy popcorn-shaped nanoparticles (NPs) to realise the broadband optical absorption enhancement of dye-sensitized solar cells (DSCs). Both simulation and experimental results indicate that compared with regular plasmonic NPs, such as nano-spheres, irregular popcorn-shaped alloy NPs exhibit absorption enhancement over a broad wavelength range due to the excitation of localized surface plasmons (LSPs) at different wavelengths. The power conversion efficiency (PCE) of DSCs is enhanced by 16% from 5.26% to 6.09% by incorporating 2.38 wt% Au-Ag alloy popcorn NPs. Moreover, by adding a scattering layer on the exterior of the counter electrode, the popcorn NPs demonstrate an even stronger ability to increase the PCE by 32% from 5.94% to 7.85%, which results from the more efficient excitation of the LSP mode on the popcorn NPs.

  3. Broadband light absorption enhancement in dye-sensitized solar cells with Au-Ag alloy popcorn nanoparticles

    PubMed Central

    Xu, Qi; Liu, Fang; Liu, Yuxiang; Cui, Kaiyu; Feng, Xue; Zhang, Wei; Huang, Yidong

    2013-01-01

    In this paper, we present an investigation on the use of Au-Ag alloy popcorn-shaped nanoparticles (NPs) to realise the broadband optical absorption enhancement of dye-sensitized solar cells (DSCs). Both simulation and experimental results indicate that compared with regular plasmonic NPs, such as nano-spheres, irregular popcorn-shaped alloy NPs exhibit absorption enhancement over a broad wavelength range due to the excitation of localized surface plasmons (LSPs) at different wavelengths. The power conversion efficiency (PCE) of DSCs is enhanced by 16% from 5.26% to 6.09% by incorporating 2.38 wt% Au-Ag alloy popcorn NPs. Moreover, by adding a scattering layer on the exterior of the counter electrode, the popcorn NPs demonstrate an even stronger ability to increase the PCE by 32% from 5.94% to 7.85%, which results from the more efficient excitation of the LSP mode on the popcorn NPs. PMID:23817586

  4. Spectroscopic Ellipsometry Studies of Thin Film a-Si:H Solar Cell Fabrication by Multichamber Deposition in the n-i-p Substrate Configuration

    NASA Astrophysics Data System (ADS)

    Dahal, Lila Raj

    Real time spectroscopic ellipsometry (RTSE), and ex-situ mapping spectroscopic ellipsometry (SE) are powerful characterization techniques capable of performance optimization and scale-up evaluation of thin film solar cells used in various photovoltaics technologies. These non-invasive optical probes employ multichannel spectral detection for high speed and provide high precision parameters that describe (i) thin film structure, such as layer thicknesses, and (ii) thin film optical properties, such as oscillator variables in analytical expressions for the complex dielectric function. These parameters are critical for evaluating the electronic performance of materials in thin film solar cells and also can be used as inputs for simulating their multilayer optical performance. In this Thesis, the component layers of thin film hydrogenated silicon (Si:H) solar cells in the n-i-p or substrate configuration on rigid and flexible substrate materials have been studied by RTSE and ex-situ mapping SE. Depositions were performed by magnetron sputtering for the metal and transparent conducting oxide contacts and by plasma enhanced chemical vapor deposition (PECVD) for the semiconductor doped contacts and intrinsic absorber layers. The motivations are first to optimize the thin film Si:H solar cell in n-i-p substrate configuration for single-junction small-area dot cells and ultimately to scale-up the optimized process to larger areas with minimum loss in device performance. Deposition phase diagrams for both i- and p -layers on 2" x 2" rigid borosilicate glass substrate were developed as functions of the hydrogen-to-silane flow ratio in PECVD. These phase diagrams were correlated with the performance parameters of the corresponding solar cells, fabricated in the Cr/Ag/ZnO/n/i/ p/ITO structure. In both cases, optimization was achieved when the layers were deposited in the protocrystalline phase. Identical solar cell structures were fabricated on 6" x 6" borosilicate glass with

  5. Bandgap Tunability in Sb-Alloyed BiVO₄ Quaternary Oxides as Visible Light Absorbers for Solar Fuel Applications.

    PubMed

    Loiudice, Anna; Ma, Jie; Drisdell, Walter S; Mattox, Tracy M; Cooper, Jason K; Thao, Timothy; Giannini, Cinzia; Yano, Junko; Wang, Lin-Wang; Sharp, Ian D; Buonsanti, Raffaella

    2015-11-01

    The challenge of fine compositional tuning and microstructure control in complex oxides is overcome by developing a general two-step synthetic approach. Antimony-alloyed bismuth vanadate, which is identified as a novel light absorber for solar fuel applications, is prepared in a wide compositional range. The bandgap of this quaternary oxide linearly decreases with the Sb content, in agreement with first-principles calculations. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Ag-Pd-Cu alloy inserted transparent indium tin oxide electrodes for organic solar cells

    SciTech Connect

    Kim, Hyo-Joong; Seo, Ki-Won; Kim, Han-Ki; Noh, Yong-Jin; Na, Seok-In

    2014-09-01

    The authors report on the characteristics of Ag-Pd-Cu (APC) alloy-inserted indium tin oxide (ITO) films sputtered on a glass substrate at room temperature for application as transparent anodes in organic solar cells (OSCs). The effect of the APC interlayer thickness on the electrical, optical, structural, and morphological properties of the ITO/APC/ITO multilayer were investigated and compared to those of ITO/Ag/ITO multilayer electrodes. At the optimized APC thickness of 8 nm, the ITO/APC/ITO multilayer exhibited a resistivity of 8.55 × 10{sup −5} Ω cm, an optical transmittance of 82.63%, and a figure-of-merit value of 13.54 × 10{sup −3} Ω{sup −1}, comparable to those of the ITO/Ag/ITO multilayer. Unlike the ITO/Ag/ITO multilayer, agglomeration of the metal interlayer was effectively relieved with APC interlayer due to existence of Pd and Cu elements in the thin region of the APC interlayer. The OSCs fabricated on the ITO/APC/ITO multilayer showed higher power conversion efficiency than that of OSCs prepared on the ITO/Ag/ITO multilayer below 10 nm due to the flatness of the APC layer. The improved performance of the OSCs with ITO/APC/ITO multilayer electrodes indicates that the APC alloy interlayer prevents the agglomeration of the Ag-based metal interlayer and can decrease the thickness of the metal interlayer in the oxide-metal-oxide multilayer of high-performance OSCs.

  7. Bench-scale screening tests for a boiling sodium-potassium alloy solar receiver

    SciTech Connect

    Moreno, J.B.; Moss, T.A.

    1993-06-01

    Bench-scale tests were carried out in support of the design of a second-generation 75-kW{sub t} reflux pool-boiler solar receiver. The receiver will be made from Haynes Alloy 230 and will contain the sodium-potassium alloy NaK-78. The bench-scale tests used quartz-lamp-heated boilers to screen candidate boiling-stabilization materials and methods at temperatures up to 750{degree}C. Candidates that provided stable boiling were tested for hot-restart behavior. Poor stability was obtained with single 1/4-inch diameter patches of powdered metal hot-press-sintered onto the wetted side of the heat-input area. Laser-drilled and electric-discharge-machined cavities in the heated surface also performed poorly. Small additions of xenon, and heated-surface tilt out of the vertical dramatically improved poor boiling stability; additions of helium or oxygen did not. The most stable boiling was obtained when the entire heat-input area was covered by a powdered-metal coating. The effect of heated-area size was assessed for one coating: at low incident fluxes, when even this coating performed poorly, increasing the heated-area size markedly improved boiling stability. Good hot-restart behavior was not observed with any candidate, although results were significantly better with added xenon in a boiler shortened from 3 to 2 feet. In addition to the screening tests, flash-radiography imaging of metal-vapor bubbles during boiling was attempted. Contrary to the Cole-Rohsenow correlation, these bubble-size estimates did not vary with pressure; instead they were constant, consistent with the only other alkali metal measurements, but about 1/2 their size.

  8. Optimum doping level in a-Si:H and a-SiC:H materials

    NASA Astrophysics Data System (ADS)

    Hadjadj, A.; St'ahel, P.; Roca i Cabarrocas, P.; Paret, V.; Bounouh, Y.; Martin, J. C.

    1998-01-01

    The changes in the optical and electrical properties of thick a-Si:H and a-SiC:H films doped with diborane are investigated. In situ spectroscopic ellipsometry measurements reveal that, at a ratio of diborane to silane Cg=[B2H6]/[SiH4]<10-3, the optical properties of both materials are not strongly modified by boron doping. However, in the case of a-Si:H films, an improvement of the morphological and optical properties is observed at Cg=0.45×10-3. The existence of an optimum doping level at Cg<10-3 in the case of an a-Si:H p layer is confirmed by the dependence of the open-circuit voltage of a-Si:H based solar cells on the doping level of the p layer.

  9. Design of Semiconducting Tetrahedral Mn1 -xZnxO Alloys and Their Application to Solar Water Splitting

    NASA Astrophysics Data System (ADS)

    Peng, Haowei; Ndione, Paul F.; Ginley, David S.; Zakutayev, Andriy; Lany, Stephan

    2015-04-01

    Transition metal oxides play important roles as contact and electrode materials, but their use as active layers in solar energy conversion requires achieving semiconducting properties akin to those of conventional semiconductors like Si or GaAs. In particular, efficient bipolar carrier transport is a challenge in these materials. Based on the prediction that a tetrahedral polymorph of MnO should have such desirable semiconducting properties, and the possibility to overcome thermodynamic solubility limits by nonequilibrium thin-film growth, we exploit both structure-property and composition-structure relationships to design and realize novel wurtzite-structure Mn1 -xZnxO alloys. At Zn compositions above x ≈0.3 , thin films of these alloys assume the tetrahedral wurtzite structure instead of the octahedral rocksalt structure of MnO, thereby enabling semiconductor properties that are unique among transition metal oxides, i.e., a band gap within the visible spectrum, a band-transport mechanism for both electron and hole carriers, electron doping, and a band lineup suitable for solar hydrogen generation. A proof of principle is provided by initial photo-electrocatalytic device measurements, corroborating, in particular, the predicted favorable hole-transport properties of these alloys.

  10. Design of Semiconducting Tetrahedral Mn 1 ₋ x Zn x O Alloys and Their Application to Solar Water Splitting

    DOE PAGES

    Peng, Haowei; Ndione, Paul F.; Ginley, David S.; ...

    2015-05-18

    Transition metal oxides play important roles as contact and electrode materials, but their use as active layers in solar energy conversion requires achieving semiconducting properties akin to those of conventional semiconductors like Si or GaAs. In particular, efficient bipolar carrier transport is a challenge in these materials. Based on the prediction that a tetrahedral polymorph of MnO should have such desirable semiconducting properties, and the possibility to overcome thermodynamic solubility limits by nonequilibrium thin-film growth, we exploit both structure-property and composition-structure relationships to design and realize novel wurtzite-structure Mn₁₋xZnxO alloys. At Zn compositions above x ≈ 0.3, thin films ofmore » these alloys assume the tetrahedral wurtzite structure instead of the octahedral rocksalt structure of MnO, thereby enabling semiconductor properties that are unique among transition metal oxides, i.e., a band gap within the visible spectrum, a band-transport mechanism for both electron and hole carriers, electron doping, and a band lineup suitable for solar hydrogen generation. A proof of principle is provided by initial photo-electrocatalytic device measurements, corroborating, in particular, the predicted favorable hole-transport properties of these alloys.« less

  11. Bi-Sn alloy catalyst for simultaneous morphology and doping control of silicon nanowires in radial junction solar cells

    SciTech Connect

    Yu, Zhongwei; Lu, Jiawen; Qian, Shengyi; Xu, Jun; Xu, Ling; Wang, Junzhuan; Shi, Yi; Chen, Kunji; Yu, Linwei E-mail: linwei.yu@polytechnique.edu

    2015-10-19

    Low-melting point metals such as bismuth (Bi) and tin (Sn) are ideal choices for mediating a low temperature growth of silicon nanowires (SiNWs) for radial junction thin film solar cells. The incorporation of Bi catalyst atoms leads to sufficient n-type doping in the SiNWs core that exempts the use of hazardous dopant gases, while an easy morphology control with pure Bi catalyst has never been demonstrated so far. We here propose a Bi-Sn alloy catalyst strategy to achieve both a beneficial catalyst-doping and an ideal SiNW morphology control. In addition to a potential of further growth temperature reduction, we show that the alloy catalyst can remain quite stable during a vapor-liquid-solid growth, while providing still sufficient n-type catalyst-doping to the SiNWs. Radial junction solar cells constructed over the alloy-catalyzed SiNWs have demonstrated a strongly enhanced photocurrent generation, thanks to optimized nanowire morphology, and largely improved performance compared to the reference samples based on the pure Bi or Sn-catalyzed SiNWs.

  12. Black a-Si:H sputtered films for photovoltaic solar cells. Final technical progress report, May 15, 1979-May 15, 1980

    SciTech Connect

    Messier, R; Tsong, I S.T.

    1980-01-01

    Aa a first step in attempting to understand the many interrelated deposition processes and film characteristics which govern sputter deposited a-Si:H film quality, a number of important basic film characteristics as a function of the preparation parameters total plasma pressure P/sub T/ and H/sub 2/ partial pressure, %H (in Ar), for the range P/sub T/ = 5 to 70mTorr and %H = 0.10, were examined in detail. A series of films were systematically prepared in this region of deposition parameter space, and these films were characterized with respect to surface and internal microstructure, chemical reactivity and etchability, total elemental composition, H-bonding configuration, intrinsic mechanical stress, optical bandgap, and mean density. In general terms, the films are described by a transition of properties dependent upon both P/sub T/ and %H. Films prepared at high P/sub T/ display a distinct columnar morphology with varying extent of intercolumn void or low-density regions. Some of these films have densities as low as approx. 60% that of c-Si, contain H predominantly in the dihydride bonding configuration, and undergo post-deposition oxidation to an extent as great as approx. 10 wt %. Films prepared in the low P/sub T/ regime are without detectable microstructure and chemically stable with no detectable bulk oxidation after many months. In these films, up to 20 at. %H was found almost entirely as monohydride, Ar content was as high as 7 at. %H, and compressive intrinsic stresses were found as large as 5 x 10/sup 9/ dynes/cm/sup 2/. These results are entirely consistent with the general Structure Zone Model (SZM) of physical vapor deposition upon which there are superimposed the chemical effects of H/sub 2/ reactive sputtering. 64 references.

  13. CoNi alloy incorporated, N doped porous carbon as efficient counter electrode for dye-sensitized solar cell

    NASA Astrophysics Data System (ADS)

    Gao, Zhiyong; Wang, Lan; Chang, Jiuli; Chen, Chen; Wu, Dapeng; Xu, Fang; Jiang, Kai

    2017-04-01

    The design of efficient non-Pt counter electrode (CE) materials is highly desired in field of dye sensitized solar cell (DSC). Herein, by combining the catalytic features of N doped carbon (NC) and CoNi alloy, CoNi alloy incorporated porous N doped carbon hybrid (CoNi-NC) is synthesized for application as catalytic CE of DSC. Benefiting from the proper meso-/macroporosity with high electroactive surface area, the CoNi-NC electrode demonstrates apparently higher electrocatalytic activity for iodine reduction reaction (IRR) over pyrolyzed Pt electrode. As a consequence, the DSC based on CoNi-NC CE yields a power conversion efficiency (PCE) of 7.6%, which is superior over that of Pt CE based cell (7.2%), highlighting the bright potential of CoNi-NC in efficient and economical CE of DSC.

  14. Platinum-free binary Co-Ni alloy counter electrodes for efficient dye-sensitized solar cells.

    PubMed

    Chen, Xiaoxu; Tang, Qunwei; He, Benlin; Lin, Lin; Yu, Liangmin

    2014-09-26

    Dye-sensitized solar cells (DSSCs) have attracted growing interest because of their application in renewable energy technologies in developing modern low-carbon economies. However, the commercial application of DSSCs has been hindered by the high expenses of platinum (Pt) counter electrodes (CEs). Here we use Pt-free binary Co-Ni alloys synthesized by a mild hydrothermal strategy as CE materials in efficient DSSCs. As a result of the rapid charge transfer, good electrical conduction, and reasonable electrocatalysis, the power conversion efficiencies of Co-Ni-based DSSCs are higher than those of Pt-only CEs, and the fabrication expense is markedly reduced. The DSSCs based on a CoNi0.25 alloy CE displays an impressive power conversion efficiency of 8.39%, fast start-up, multiple start/stop cycling, and good stability under extended irradiation. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Performance-improved thin-film a-Si:H/μc-Si:H tandem solar cells by two-dimensionally nanopatterning photoactive layer

    PubMed Central

    2014-01-01

    Tandem solar cells consisting of amorphous and microcrystalline silicon junctions with the top junction nanopatterned as a two-dimensional photonic crystal are studied. Broadband light trapping, detailed electron/hole transport, and photocurrent matching modulation are considered. It is found that the absorptances of both junctions can be significantly increased by properly engineering the duty cycles and pitches of the photonic crystal; however, the photocurrent enhancement is always unevenly distributed in the junctions, leading to a relatively high photocurrent mismatch. Further considering an optimized intermediate layer and device resistances, the optimally matched photocurrent approximately 12.74 mA/cm2 is achieved with a light-conversion efficiency predicted to be 12.67%, exhibiting an enhancement of over 27.72% compared to conventional planar configuration. PMID:24521244

  16. Corrosion of alloys in a chloride molten salt (NaCl-LiCl) for solar thermal technologies

    DOE PAGES

    Gomez-Vidal, Judith C.; Tirawat, Robert

    2016-06-01

    Next-generation solar power conversion systems in concentrating solar power (CSP) applications require high-temperature advanced fluids in the range of 600–800 °C. Current commercial CSP plants use molten nitrate salt mixtures as the heat transfer fluid and the thermal energy storage (TES) media while operating with multiple hours of energy capacity and at temperatures lower than 565 °C. At higher temperatures, the nitrates cannot be used because they decompose. Molten chloride salts are candidates for CSP applications because of their high decomposition temperatures and good thermal properties; but they can be corrosive to common alloys used in vessels, heat exchangers, andmore » piping at these elevated temperatures. In this article, we present the results of the corrosion evaluations of several alloys in eutectic 34.42 wt% NaCl – 65.58 wt% LiCl at 650–700 °C in nitrogen atmosphere. Electrochemical evaluations were performed using open-circuit potential followed by a potentiodynamic polarization sweep. Corrosion rates were determined using Tafel slopes and Faraday's law. A temperature increase of as little as 50 °C more than doubled the corrosion rate of AISI stainless steel 310 and Incoloy 800H compared to the initial 650 °C test. These alloys exhibited localized corrosion. Inconel 625 was the most corrosion-resistant alloy with a corrosion rate of 2.80±0.38 mm/year. For TES applications, corrosion rates with magnitudes of a few millimeters per year are not acceptable because of economic considerations. Additionally, localized corrosion (intergranular or pitting) can be catastrophic. Furthermore, corrosion-mitigation approaches are required for advanced CSP plants to be commercially viable.« less

  17. Corrosion of alloys in a chloride molten salt (NaCl-LiCl) for solar thermal technologies

    SciTech Connect

    Gomez-Vidal, Judith C.; Tirawat, Robert

    2016-06-01

    Next-generation solar power conversion systems in concentrating solar power (CSP) applications require high-temperature advanced fluids in the range of 600–800 °C. Current commercial CSP plants use molten nitrate salt mixtures as the heat transfer fluid and the thermal energy storage (TES) media while operating with multiple hours of energy capacity and at temperatures lower than 565 °C. At higher temperatures, the nitrates cannot be used because they decompose. Molten chloride salts are candidates for CSP applications because of their high decomposition temperatures and good thermal properties; but they can be corrosive to common alloys used in vessels, heat exchangers, and piping at these elevated temperatures. In this article, we present the results of the corrosion evaluations of several alloys in eutectic 34.42 wt% NaCl – 65.58 wt% LiCl at 650–700 °C in nitrogen atmosphere. Electrochemical evaluations were performed using open-circuit potential followed by a potentiodynamic polarization sweep. Corrosion rates were determined using Tafel slopes and Faraday's law. A temperature increase of as little as 50 °C more than doubled the corrosion rate of AISI stainless steel 310 and Incoloy 800H compared to the initial 650 °C test. These alloys exhibited localized corrosion. Inconel 625 was the most corrosion-resistant alloy with a corrosion rate of 2.80±0.38 mm/year. For TES applications, corrosion rates with magnitudes of a few millimeters per year are not acceptable because of economic considerations. Additionally, localized corrosion (intergranular or pitting) can be catastrophic. Furthermore, corrosion-mitigation approaches are required for advanced CSP plants to be commercially viable.

  18. Corrosion of alloys in a chloride molten salt (NaCl-LiCl) for solar thermal technologies

    SciTech Connect

    Gomez-Vidal, Judith C.; Tirawat, Robert

    2016-12-01

    Next-generation solar power conversion systems in concentrating solar power (CSP) applications require high-temperature advanced fluids in the range of 600-800 degrees C. Current commercial CSP plants use molten nitrate salt mixtures as the heat transfer fluid and the thermal energy storage (TES) media while operating with multiple hours of energy capacity and at temperatures lower than 565 degrees C. At higher temperatures, the nitrates cannot be used because they decompose. Molten chloride salts are candidates for CSP applications because of their high decomposition temperatures and good thermal properties; but they can be corrosive to common alloys used in vessels, heat exchangers, and piping at these elevated temperatures. In this article, we present the results of the corrosion evaluations of several alloys in eutectic 34.42 wt% NaCl - 65.58 wt% LiCl at 650-700 degrees C in nitrogen atmosphere. Electrochemical evaluations were performed using open-circuit potential followed by a potentiodynamic polarization sweep. Corrosion rates were determined using Tafel slopes and Faraday's law. A temperature increase of as little as 50 degrees C more than doubled the corrosion rate of AISI stainless steel 310 and Incoloy 800H compared to the initial 650 degrees C test. These alloys exhibited localized corrosion. Inconel 625 was the most corrosion-resistant alloy with a corrosion rate of 2.80+/-0.38 mm/year. For TES applications, corrosion rates with magnitudes of a few millimeters per year are not acceptable because of economic considerations. Additionally, localized corrosion (intergranular or pitting) can be catastrophic. Thus, corrosion-mitigation approaches are required for advanced CSP plants to be commercially viable.

  19. In situ synthesis of binary cobalt-ruthenium nanofiber alloy counter electrode for electrolyte-free cadmium sulfide quantum dot solar cells

    NASA Astrophysics Data System (ADS)

    Du, Nan; Ren, Lei; Sun, Weifu; Jin, Xiao; Zhao, Qing; Cheng, Yuanyuan; Wei, Taihuei; Li, Qinghua

    2015-06-01

    A facile, low-cost and low-temperature fabrication approach of counter electrode is essential for pursuing robust photovoltaic devices. Herein, we develop a hydrothermal in situ growth of Cobalt-Ruthenium (Co-Ru) alloy nanofiber electrode for quantum dot solar cell (QDSC) applications. Colloidal CdS QDs with tunable absorption band edge are synthesized and used as light absorber. After optimizing the QDs with the highest photoluminescence quantum yield accompanied by considerable solar light absorption ability, QDSC based on Co-Ru alloy electrode delivers a much higher power conversion efficiency than its counterparts, i.e., either pure Co or Ru metal electrodes. In detail, Co-Ru alloy electrode exhibits high specific area, excellent electrical behavior, intimate interface contact, and good stability, thus leading to notable improved device performances. The impressive robust function of Co-Ru alloy with simple manufacturing procedure highlights its potential applications in robust QDSCs.

  20. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

    PubMed

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-12-03

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

  1. Characterization of the (Ag,Cu)(In,Ga)Se2 thin film alloy system for solar cells

    NASA Astrophysics Data System (ADS)

    Boyle, Jonathan

    Energy is the underlying factor to human economic activity, and more energy is projected to be needed in the near future and photovoltaics provide a means to supply that energy. Results presented in this dissertation detail material properties of the (Ag,Cu)(In,Ga)Se2 thin film alloy system for use as a solar cell material. Structural and optical properties were determined via X-ray diffraction and UV/Vis/NIR spectrophotometry, respectively. Structural data was analyzed using JADE 2010 software and optical data was analyzed via two different methods. Results of Ag substitution into Cu(In,Ga)Se2 alloy were reconciled with the Jaffe-Wei-Zunger (JWZ) theoretical model, which relates structural and chemical properties of Cu-based ternary chalcopyrite alloys to their optical properties. Dominant phase of the alloy system was identified as chalcopyrite I-42d, Space group 122, with minor secondary phases and order defect phases. No chalcopyrite-chalcopyrite miscibility gap was present in the alloy compositional space, counter to prior literature on bulk polycrystalline materials and thermodynamic calculations performed here, indicating that Ag was successfully substituted into the chalcopyrite lattice. Lattice constant results were consistent with JWZ model, where a O lattice constant closely follows Vegard's rule, cO lattice constant changes at different rates than aO does with composition, and anion displacement is affected by cation radii. Optical results showed bandgap widening with Ag and Ga substitution across the full compositional space, with bowing parameters shown overall to be invariant with cation substitution, counter to expectations. (Ag+Cu)/(In+Ga) ratio effect on bandgap for a limited set of samples is consistent with p-d hybridization effects from JWZ model.

  2. Corrosion of high temperature alloys in solar salt at 400, 500, and 680ÀC.

    SciTech Connect

    Kruizenga, Alan Michael; Gill, David Dennis; LaFord, Marianne Elizabeth

    2013-09-01

    Corrosion tests at 400, 500, and 680ÀC were performed using four high temperature alloys; 347SS, 321SS In625, and HA230. Molten salt chemistry was monitored over time through analysis of nitrite, carbonate, and dissolved metals. Metallography was performed on alloys at 500 and 680ÀC, due to the relatively thin oxide scale observed at 400ÀC. At 500ÀC, corrosion of iron based alloys took the form of chromium depletion and iron oxides, while nickel based alloys also had chromium depletion and formation of NiO. Chromium was detected in relatively low concentrations at this temperature. At 680ÀC, significant surface corrosion occurred with metal losses greater than 450microns/year after 1025hours of exposure. Iron based alloys formed complex iron, sodium, and chromium oxides. Some data suggests grain boundary chromium depletion of 321SS. Nickel alloys formed NiO and metallic nickel corrosion morphologies, with HA230 displaying significant internal oxidation in the form of chromia. Nickel alloys both exhibited worse corrosion than iron based alloys likely due to preferential dissolution of chromium, molybdenum, and tungsten.

  3. Homogenous Alloys of Formamidinium Lead Triiodide and Cesium Tin Triiodide for Efficient Ideal-Bandgap Perovskite Solar Cells.

    PubMed

    Zong, Yingxia; Wang, Ning; Zhang, Lin; Ju, Ming-Gang; Zeng, Xiao Cheng; Sun, Xiao Wei; Zhou, Yuanyuan; Padture, Nitin P

    2017-07-03

    The alloying behavior between FAPbI3 and CsSnI3 perovskites is studied carefully for the first time, which has led to the realization of single-phase hybrid perovskites of (FAPbI3 )1-x (CsSnI3 )x (0solar cell operation is achieved in the rationally-tailored (FAPbI3 )0.7 (CsSnI3 )0.3 -composition perovskite. Solar cells based on this new perovskite show power conversion efficiency up to 14.6 %. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Amorphous silicon solar cells

    NASA Astrophysics Data System (ADS)

    Takahashi, K.; Konagai, M.

    The fabrication, performance, and applications of a-Si solar cells are discussed, summarizing the results of recent experimental investigations and trial installations. Topics examined include the fundamental principles and design strategies of solar power installations; the characteristics of monocrystalline-Si solar cells; techniques for reducing the cost of solar cells; independent, linked, and hybrid solar power systems; proposed satellite solar power systems; and the use of solar cells in consumer appliances. Consideration is given to the history of a-Si, a-Si fabrication techniques, quality criteria for a-Si films, solar cells based on a-Si, and techniques for increasing the efficiency and lowering the cost of a-Si solar cells. Graphs, diagrams, drawings, and black-and-white and color photographs are provided.

  5. Identification of salt-alloy combinations for thermal energy storage applications in advanced solar dynamic power systems

    NASA Technical Reports Server (NTRS)

    Whittenberger, J. D.; Misra, A. K.

    1987-01-01

    Thermodynamic calculations based on the available data for flouride salt systems reveal that a number of congruently melting compositions and eutectics exist which have the potential to meet the lightweight, high energy storage requirements imposed for advanced solar dynamic systems operating between about 1000 and 1400 K. Compatibility studies to determine suitable containment alloys to be used with NaF-22CaF2-13MgF2, NaF-32CaF2, and NaF-23MgF2 have been conducted at the eutectic temperature + 25 K for each system. For these three NaF-based eutectics, none of the common, commercially available high temperature alloys appear to offer adequate corrosion resistance for a long lifetime; however mild steel, pure nickel and Nb-1Zr could prove useful. These latter materials suggest the possibility that a strong, corrosion resistant, nonrefractory, elevated temperature alloy based on the Ni-Ni3Nb system could be developed.

  6. Identification of salt-alloy combinations for thermal energy storage applications in advanced solar dynamic power systems

    NASA Technical Reports Server (NTRS)

    Whittenberger, J. D.; Misra, A. K.

    1987-01-01

    Thermodynamic calculations based on the available data for flouride salt systems reveal that a number of congruently melting compositions and eutectics exist which have the potential to meet the lightweight, high energy storage requirements imposed for advanced solar dynamic systems operating between about 1000 and 1400 K. Compatibility studies to determine suitable containment alloys to be used with NaF-22CaF2-13MgF2, NaF-32CaF2, and NaF-23MgF2 have been conducted at the eutectic temperature + 25 K for each system. For these three NaF-based eutectics, none of the common, commercially available high temperature alloys appear to offer adequate corrosion resistance for a long lifetime; however mild steel, pure nickel and Nb-1Zr could prove useful. These latter materials suggest the possibility that a strong, corrosion resistant, nonrefractory, elevated temperature alloy based on the Ni-Ni3Nb system could be developed.

  7. Identification of salt-alloy combinations for thermal energy storage applications in advanced solar dynamic power systems

    NASA Astrophysics Data System (ADS)

    Whittenberger, J. D.; Misra, A. K.

    Thermodynamic calculations based on the available data for flouride salt systems reveal that a number of congruently melting compositions and eutectics exist which have the potential to meet the lightweight, high energy storage requirements imposed for advanced solar dynamic systems operating between about 1000 and 1400 K. Compatibility studies to determine suitable containment alloys to be used with NaF-22CaF2-13MgF2, NaF-32CaF2, and NaF-23MgF2 have been conducted at the eutectic temperature + 25 K for each system. For these three NaF-based eutectics, none of the common, commercially available high temperature alloys appear to offer adequate corrosion resistance for a long lifetime; however mild steel, pure nickel and Nb-1Zr could prove useful. These latter materials suggest the possibility that a strong, corrosion resistant, nonrefractory, elevated temperature alloy based on the Ni-Ni3Nb system could be developed.

  8. 1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cells

    NASA Technical Reports Server (NTRS)

    Abdulaziz, Salman; Payson, J. S.; Li, Yang; Woodyard, James R.

    1990-01-01

    A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.

  9. 1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cells

    NASA Technical Reports Server (NTRS)

    Abdulaziz, Salman; Payson, J. S.; Li, Yang; Woodyard, James R.

    1990-01-01

    A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.

  10. Counter electrode electrocatalysts from one-dimensional coaxial alloy nanowires for efficient dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Duan, Jialong; Tang, Qunwei; Zhang, Huihui; Meng, Yuanyuan; Yu, Liangmin; Yang, Peizhi

    2016-01-01

    Pursuit of cost-effective counter electrode (CE) electrocatalysts with no sacrifice of photovoltaic performances has been a persistent objective for advanced dye-sensitized solar cell (DSSC) platforms. Here we demonstrate the experimental realization of CE electrocatalysts from Cu@M@Pt (M = Fe, Co, Ni) coaxial alloy nanowires for efficient DSSCs. The reasonable electrocatalytic activity is attributed to work function matching of alloy CEs to potential of I- /I3- and redistribute the electronic structure on the Pt surface. In comparison with 8.48% for the Pt nanotube CE based DSSC, the solar cells yield power conversion efficiencies up to 8.21%, 7.85%, and 7.30% using Cu@Fe@Pt, Cu@Co@Pt, and Cu@Ni@Pt NWs, respectively. This work represents an important step forward, as it demonstrates how to make the CE catalyst active and to accelerate the electron transport from CE to electrolyte for high-efficiency but cost-effective DSSC platforms.

  11. Design of Semiconducting Tetrahedral Mn1-xZnxO Alloys and Their Application to Solar Water Splitting

    DOE PAGES

    Peng, Haowei; Ndione, Paul F.; Ginley, David S.; ...

    2015-03-18

    Transition metal oxides play important roles as contact and electrode materials, but their use as active layers in solar energy conversion requires achieving semiconducting properties akin to those of conventional semiconductors like Si or GaAs. In particular, efficient bipolar carrier transport is a challenge in these materials. Based on the prediction that a tetrahedral polymorph of MnO should have such desirable semiconducting properties, and the possibility to overcome thermodynamic solubility limits by nonequilibrium thin-film growth, we exploit both structure-property and composition-structure relationships to design and realize novel wurtzite-structure Mn1₋xZnxO alloys. At Zn compositions above x≈0.3, thin films of these alloysmore » assume the tetrahedral wurtzite structure instead of the octahedral rocksalt structure of MnO, thereby enabling semiconductor properties that are unique among transition metal oxides, i.e., a band gap within the visible spectrum, a band-transport mechanism for both electron and hole carriers, electron doping, and a band lineup suitable for solar hydrogen generation. In conclusion, a proof of principle is provided by initial photo-electrocatalytic device measurements, corroborating, in particular, the predicted favorable hole-transport properties of these alloys.« less

  12. Photocurrent collection in a Schottky barrier on an amorphous silicon-germanium alloy structure with 1.23 eV optical gap

    NASA Astrophysics Data System (ADS)

    Chu, V.; Conde, J. P.; Shen, D. S.; Wagner, S.

    1989-07-01

    We report the result of voltage-dependent photocurrent collection measurements in Pd Schottky barriers on an undoped a-Si,Ge:H,F multilayer alloy structure with an effective optical gap of 1.23 eV. The hole mobility-lifetime product (μτ)p, extracted from a fit of the voltage dependence of the photocurrent to the Hecht expression, is 7×10-9 cm2 V-1. Our result is an important indication that it is possible to produce the low-gap a-Si,Ge:H,F alloys with the optoelectronic characteristics needed for efficient tandem solar cells.

  13. An Experimental Investigation of Fe-Si Alloy Corrosion in the Solar Nebula

    NASA Technical Reports Server (NTRS)

    Zega, Thomas J.; Lauretta, Dante S.; Buseck, Peter R.

    2001-01-01

    We have performed an experimental study of Fe-Si alloy corrosion under dust-rich nebular conditions. The reaction products are silica and fayalite. Additional information is contained in the original extended abstract.

  14. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology

    PubMed Central

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-01-01

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm2, and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p+−n homojunction through the formation of re-grown crystalline silicon layer (~5–10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method. PMID:26632759

  15. Annealing characteristics of irradiated hydrogenated amorphous silicon solar cells

    NASA Technical Reports Server (NTRS)

    Payson, J. S.; Abdulaziz, S.; Li, Y.; Woodyard, J. R.

    1991-01-01

    It was shown that 1 MeV proton irradiation with fluences of 1.25E14 and 1.25E15/sq cm reduces the normalized I(sub SC) of a-Si:H solar cell. Solar cells recently fabricated showed superior radiation tolerance compared with cells fabricated four years ago; the improvement is probably due to the fact that the new cells are thinner and fabricated from improved materials. Room temperature annealing was observed for the first time in both new and old cells. New cells anneal at a faster rate than old cells for the same fluence. From the annealing work it is apparent that there are at least two types of defects and/or annealing mechanisms. One cell had improved I-V characteristics following irradiation as compared to the virgin cell. The work shows that the photothermal deflection spectroscopy (PDS) and annealing measurements may be used to predict the qualitative behavior of a-Si:H solar cells. It was anticipated that the modeling work will quantitatively link thin film measurements with solar cell properties. Quantitative predictions of the operation of a-Si:H solar cells in a space environment will require a knowledge of the defect creation mechanisms, defect structures, role of defects on degradation, and defect passivation and annealing mechanisms. The engineering data and knowledge base for justifying space flight testing of a-Si:H alloy based solar cells is being developed.

  16. Si-Ge-Sn alloys with 1.0 eV gap for CPV multijunction solar cells

    SciTech Connect

    Roucka, Radek Clark, Andrew; Landini, Barbara

    2015-09-28

    Si-Ge-Sn ternary group IV alloys offer an alternative to currently used 1.0 eV gap materials utilized in multijunction solar cells. The advantage of Si-Ge-Sn is the ability to vary both the bandgap and lattice parameter independently. We present current development in fabrication of Si-Ge-Sn alloys with gaps in the 1.0 eV range. Produced material exhibits excellent structural properties, which allow for integration with existing III-V photovoltaic cell concepts. Time dependent room temperature photoluminescence data demonstrate that these materials have long carrier lifetimes. Absorption tunable by compositional changes is observed. As a prototype device set utilizing the 1 eV Si-Ge-Sn junction, single junction Si-Ge-Sn device and triple junction device with Si-Ge-Sn subcell have been fabricated. The resulting I-V and external quantum efficiency data show that the Si-Ge-Sn junction is fully functional and the performance is comparable to other 1.0 eV gap materials currently used.

  17. Alloying Strategy in Cu-In-Ga-Se Quantum Dots for High Efficiency Quantum Dot Sensitized Solar Cells.

    PubMed

    Peng, Wenxiang; Du, Jun; Pan, Zhenxiao; Nakazawa, Naoki; Sun, Jiankun; Du, Zhonglin; Shen, Gencai; Yu, Juan; Hu, Jin-Song; Shen, Qing; Zhong, Xinhua

    2017-02-15

    I-III-VI2 group "green" quantum dots (QDs) are attracting increasing attention in photoelectronic conversion applications. Herein, on the basis of the "simultaneous nucleation and growth" approach, Cu-In-Ga-Se (CIGSe) QDs with light harvesting range of about 1000 nm were synthesized and used as sensitizer to construct quantum dot sensitized solar cells (QDSCs). Inductively coupled plasma atomic emission spectrometry (ICP-AES), wild-angle X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) analyses demonstrate that the Ga element was alloyed in the Cu-In-Se (CISe) host. Ultraviolet photoelectron spectroscopy (UPS) and femtosecond (fs) resolution transient absorption (TA) measurement results indicate that the alloying strategy could optimize the electronic structure in the obtained CIGSe QD material, thus matching well with TiO2 substrate and favoring the photogenerated electron extraction. Open circuit voltage decay (OCVD) and impedance spectroscopy (IS) tests indicate that the intrinsic recombination in CIGSe QDSCs was well suppressed relative to that in CISe QDSCs. As a result, CIGSe based QDSCs with use of titanium mesh supported mesoporous carbon counter electrode exhibited a champion efficiency of 11.49% (Jsc = 25.01 mA/cm(2), Voc = 0.740 V, FF = 0.621) under the irradiation of full one sun in comparison with 9.46% for CISe QDSCs.

  18. Beyond 11% efficient sulfide kesterite Cu2ZnxCd1–xSnS4 solar cell: Effects of cadmium alloying

    DOE PAGES

    Yan, Chang; Sun, Kaiwen; Huang, Jialiang; ...

    2017-04-03

    Here, kesterite Cu2ZnSnS4 (CZTS) thin-film solar cells have drawn worldwide attention because of outstanding performance and earth-abundant constituents. However, problems such as coexistence of complex secondary phases, the band tailing issue, short minority lifetime, bulk defects, and undesirable band alignment at p-n interfaces need to be addressed for further efficiency improvement. In this regard, Cd alloying shows promise for dealing with some of these problems. In this work, a beyond 11% efficient Cd-alloyed CZTS solar cell is achieved, and the effects of Cd-alloying and mechanism underpinning the performance improvement have been investigated. The introduction of Cd can significantly reduce themore » band tailing issue, which is confirmed by the reduction in the difference between the photoluminescence peak and optical band gap (Eg) as well as decreased Urbach energy. The microstructure, minority lifetime, and electrical properties of CZTS absorber are greatly improved by Cd alloying. Further XPS analyses show that the partial Cd alloying slightly reduces the band gap of CZTS via elevating the valence band maximum of CZTS. This suggests that there are opportunities for further efficiency improvement by engineering the absorber and the associated interface with the buffer.« less

  19. Structural and compositional dependence of the CdTexSe1-x alloy layer photoactivity in CdTe-based solar cells

    SciTech Connect

    Poplawsky, Jonathan D.; Guo, Wei; Paudel, Naba; Ng, Amy; More, Karren; Leonard, Donovan; Yan, Yanfa

    2016-07-27

    The published external quantum efficiency data of the world-record CdTe solar cell suggests that the device uses bandgap engineering, most likely with a CdTexSe1₋x alloy layer to increase the short-circuit current and overall device efficiency. Here atom probe tomography, transmission electron microscopy and electron beam-induced current are used to clarify the dependence of Se content on the photoactive properties of CdTexSe1₋x alloy layers in bandgap-graded CdTe solar cells. Four solar cells were prepared with 50, 100, 200 and 400 nm-thick CdSe layers to reveal the formation, growth, composition, structure and photoactivity of the CdTexSe1₋x alloy with respect to the degree of Se diffusion. Finally, the results show that the CdTexSe1₋x layer photoactivity is highly dependent on the crystalline structure of the alloy (zincblende versus wurtzite), which is also dependent on the Se and Te concentrations.

  20. Structural and compositional dependence of the CdTexSe1-x alloy layer photoactivity in CdTe-based solar cells.

    PubMed

    Poplawsky, Jonathan D; Guo, Wei; Paudel, Naba; Ng, Amy; More, Karren; Leonard, Donovan; Yan, Yanfa

    2016-07-27

    The published external quantum efficiency data of the world-record CdTe solar cell suggests that the device uses bandgap engineering, most likely with a CdTexSe1-x alloy layer to increase the short-circuit current and overall device efficiency. Here atom probe tomography, transmission electron microscopy and electron beam-induced current are used to clarify the dependence of Se content on the photoactive properties of CdTexSe1-x alloy layers in bandgap-graded CdTe solar cells. Four solar cells were prepared with 50, 100, 200 and 400 nm-thick CdSe layers to reveal the formation, growth, composition, structure and photoactivity of the CdTexSe1-x alloy with respect to the degree of Se diffusion. The results show that the CdTexSe1-x layer photoactivity is highly dependent on the crystalline structure of the alloy (zincblende versus wurtzite), which is also dependent on the Se and Te concentrations.

  1. Structural and compositional dependence of the CdTexSe1-x alloy layer photoactivity in CdTe-based solar cells

    DOE PAGES

    Poplawsky, Jonathan D.; Guo, Wei; Paudel, Naba; ...

    2016-07-27

    The published external quantum efficiency data of the world-record CdTe solar cell suggests that the device uses bandgap engineering, most likely with a CdTexSe1₋x alloy layer to increase the short-circuit current and overall device efficiency. Here atom probe tomography, transmission electron microscopy and electron beam-induced current are used to clarify the dependence of Se content on the photoactive properties of CdTexSe1₋x alloy layers in bandgap-graded CdTe solar cells. Four solar cells were prepared with 50, 100, 200 and 400 nm-thick CdSe layers to reveal the formation, growth, composition, structure and photoactivity of the CdTexSe1₋x alloy with respect to the degreemore » of Se diffusion. Finally, the results show that the CdTexSe1₋x layer photoactivity is highly dependent on the crystalline structure of the alloy (zincblende versus wurtzite), which is also dependent on the Se and Te concentrations.« less

  2. Structural and compositional dependence of the CdTexSe1−x alloy layer photoactivity in CdTe-based solar cells

    PubMed Central

    Poplawsky, Jonathan D.; Guo, Wei; Paudel, Naba; Ng, Amy; More, Karren; Leonard, Donovan; Yan, Yanfa

    2016-01-01

    The published external quantum efficiency data of the world-record CdTe solar cell suggests that the device uses bandgap engineering, most likely with a CdTexSe1−x alloy layer to increase the short-circuit current and overall device efficiency. Here atom probe tomography, transmission electron microscopy and electron beam-induced current are used to clarify the dependence of Se content on the photoactive properties of CdTexSe1−x alloy layers in bandgap-graded CdTe solar cells. Four solar cells were prepared with 50, 100, 200 and 400 nm-thick CdSe layers to reveal the formation, growth, composition, structure and photoactivity of the CdTexSe1−x alloy with respect to the degree of Se diffusion. The results show that the CdTexSe1−x layer photoactivity is highly dependent on the crystalline structure of the alloy (zincblende versus wurtzite), which is also dependent on the Se and Te concentrations. PMID:27460872

  3. Influence of Surface Energy on Organic Alloy Formation in Ternary Blend Solar Cells Based on Two Donor Polymers.

    PubMed

    Gobalasingham, Nemal S; Noh, Sangtaik; Howard, Jenna B; Thompson, Barry C

    2016-10-05

    The compositional dependence of the open-circuit voltage (Voc) in ternary blend bulk heterojunction (BHJ) solar cells is correlated with the miscibility of polymers, which may be influenced by a number of attributes, including crystallinity, the random copolymer effect, or surface energy. Four ternary blend systems featuring poly(3-hexylthiophene-co-3-(2-ethylhexyl)thiophene) (P3HT75-co-EHT25), poly(3-hexylthiophene-co-(hexyl-3-carboxylate)), herein referred to as poly(3-hexylthiophene-co-3-hexylesterthiophene) (P3HT50-co-3HET50), poly(3-hexylthiophene-thiophene-diketopyrrolopyrrole) (P3HTT-DPP-10%), and an analog of P3HTT-DPP-10% with 40% of 3-hexylthiophene exchanged for 2-(2-methoxyethoxy)ethylthiophen-2-yl (3MEO-T) (featuring an electronically decoupled oligoether side-chain), referred to as P3HTTDPP-MEO40%, are explored in this work. All four polymers are semicrystalline and rich in rr-P3HT content and perform well in binary devices with PC61BM. Except for P3HTTDPP-MEO40%, all polymers exhibit similar surface energies (∼21-22 mN/m). P3HTTDPP-MEO40% exhibits an elevated surface energy of around 26 mN/m. As a result, despite the similar optoelectronic properties and binary solar cell performance of P3HTTDPP-MEO40% compared to P3HTT-DPP-10%, the former exhibits a pinned Voc in two different sets of ternary blend devices. This is a stark contrast to previous rr-P3HT-based systems and demonstrates that surface energy, and its influence on miscibility, plays a critical role in the formation of organic alloys and can supersede the influence of crystallinity, the random copolymer effect, similar backbone structures, and HOMO/LUMO considerations. Therefore, we confirm surface energy compatibility as a figure-of-merit for predicting the compositional dependence of the Voc in ternary blend solar cells and highlight the importance of polymer miscibility in organic alloy formation.

  4. Wide range bandgap modulation based on ZnO-based alloys and fabrication of solar blind UV detectors with high rejection ratio.

    PubMed

    Su, Longxing; Zhu, Yuan; Yong, Dingyu; Chen, Mingming; Ji, Xu; Su, Yuquan; Gui, Xuchun; Pan, Bicai; Xiang, Rong; Tang, Zikang

    2014-08-27

    Theoretical calculations on formation energies of MgZnO, BeZnO and BeMgZnO alloys are presented. The ternary alloy MgZnO (BeZnO) is found to be unstable with high Mg (Be) contents. However, the quaternary system BeMgZnO is predicted to be stable with small Be/Mg atom ratio. Subsequently, a wurtzite Be0.17Mg0.54Zn0.29O alloy with a bandgap of 5.15 eV has been acquired experimentally. Its bandgap is in the middle of solar blind region and thus it is an ideal material for realizing a high rejection ratio solar blind ultraviolet (UV) detector, which has long been a problem. A metal-semiconductor-metal (MSM) structured solar blind UV detector based on this material is then fabricated, realizing a much higher rejection ratio than reported MgZnO-based detectors. One more interesting thing is, as a complicated quaternary system, BeMgZnO can maintain its crystal quality in a wide compositional range, which is not happening in MgZnO and BeZnO. To get some microscopic insight into the Be-Mg mutual stabilizing mechanism, more calculations on the lattice constants of BeZnO and MgZnO alloys, and the coordination preference of Be ions in alloy were conducted. The a-axis lattice compensation and 4-fold coordination preference of Be atom are confirmed the major origins for Be-Mg mutual stabilizing in ZnO lattice.

  5. Electron cyclotron resonance deposition of amorphous silicon alloy films and devices

    SciTech Connect

    Shing, Y.H. )

    1992-10-01

    This report describes work to develop a state-of-the-art electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (PECVD) system. The objective was to understand the deposition processes of amorphous silicon (a-Si:H) and related alloys, with a best-effort improvement of optoelectronic material properties and best-effort stabilization of solar cell performance. ECR growth parameters were systematically and extensively investigated; materials characterization included constant photocurrent measurement (CPM), junction capacitance, drive-level capacitance profiling (DLCP), optical transmission, light and dark photoconductivity, and small-angle X-ray scattering (SAXS). Conventional ECR-deposited a-Si:H was compared to a new form, a-Si:(Xe, H), in which xenon gas was added to the ECR plasma. a-Si:(Xe,H) possessed low, stable dark conductivities and high photosensitivites. Light-soaking revealed photodegradation rates about 35% lower than those of comparable radio frequency (rf)-deposited material. ECR-deposited p-type a SiC:H and intrinsic a-Si:H films underwent evaluation as components of p-i-n solar cells with standard rf films for the remaining layers.

  6. Solarbus Solar Array Innovative Light Weight Mechanical Architecture with Thin Lateral Panels Deployed with Shape Memory Alloy Regulator

    NASA Astrophysics Data System (ADS)

    D'Abrigeon, Laurent; Carpine, Anne; Laduree, Gregory

    2005-05-01

    The standard ALCATEL SOLAR ARRAY PLANAR CONCEPT on the TELECOM market today on flight is named SOLARBUS. This concept is: • 3 to 10 identical panels covered with Si Hi-η cell technology. • A central mast constitute by 3 to 4 panels and 1 yoke linked together by hinges and synchronized by cables. • From 2 to 6 lateral panels This concept is able to fit with the customer requirements in order to have a competitive "global offer at system level" (mass to power ratio 48-50 W/Kg) But, for the near future, in line with the market trend, and based on the previous experience, an improvement of the SOLARBUS Solar Array concept in term of W/kg/€ is essential in order to maintain the competitiveness of the global ALCATEL offer at system level. In order to increase the W/Kg performance Alcatel has developed a new architecture named Lightweight Panel Structure (LPS). The objectives of this new structure are : • To decrease the kg/m2 ratio • To be compatible of all promising cells technology including Si Hi-n, GaAs, GaAs+ small reflectors. This new architecture is based on the fact that during the 3 major life phases of a Solar Array (Launch/Deployment/Deployed orbital life), the structural needs are more important for the central panels than for the lateral panels. So two different panels have been designed : • Central panels (named LPS1) • Lateral panels (named LPS2) The stowing configuration as been adapted : 2 thin lateral panels LPS2 between 2 structural central panels LPS1, and local bumpers to transfer the loads from LPS2 to LPS1. Also one of the more stringent loads applied to the panels are corresponding to deployment loads. In order to limit the mass of reinforcement of the panels, a deployment speed regulator shall be used. In the frame of the new generation of solar arrays, Alcatel has developed a new actuator based on shape memory alloy torsional rod. This light weight component is directly connected to heaters lines and is able to provide great

  7. In-situ monitoring of surface hydrogen on the a-SiGe:H films

    SciTech Connect

    Toyoshima, Y.; Ganguly, G.; Ikeda, T.; Saitoh, K.; Kondo, M.; Matsuda, A.

    1997-07-01

    The bonded hydrogen on the growing surface of hydrogenated amorphous silicon germanium (a-SiGe:H) alloy films has been investigated by use of infrared reflection absorption spectroscopy (IR-RAS). When the alloy films are Si-rich, the surface hydrogen bonded to Si atoms is found to behave in a similar way to those on the hydrogenated amorphous silicon (a-Si:H) films. This means that the thermal desorption stability of surface Si hydride species is not significantly affected by the coexistence of a small amount (typically 20 at.%) of Ge. On the contrary, the desorption behavior of surface hydrogen depends on the alloy composition when the a-SiGe:H films are Ge-rich. A surface reaction scheme is provided in an attempt to explain this series of behavior in surface hydrogen on the a-SiGe:H films.

  8. Nitrogen-doped carbon onions encapsulating metal alloys as efficient and stable catalysts for dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Zhu, Chongyang; Xu, Feng; Chen, Jing; Min, Huihua; Dong, Hui; Tong, Ling; Qasim, Khan; Li, Shengli; Sun, Litao

    2016-01-01

    Designing a new class of non-noble metal catalysts with triiodide reduction activity and stability comparable to those of conventional Pt is extremely significant for the application of dye-sensitized solar cells (DSSCs). Here, we demonstrate newly designed counter electrode (CE) materials of onion-like nitrogen-doped carbon encapsulating metal alloys (ONC@MAs) such as FeNi3 (ONC@FeNi3) or FeCo (ONC@FeCo), by a facile and scalable pyrolysis method. The resulting composite catalysts show superior catalytic activities towards the triiodide reduction and exhibit low charge transfer resistance between the electrode surfaces and electrolytes. As a result, the DSSCs based on ONC@FeCo and ONC@FeNi3 achieve outstanding power conversion efficiencies (PCEs) of 8.26% and 8.87%, respectively, which can rival the 8.28% of Pt-based DSSC. Moreover, the excellent electrochemical stabilities for both the two catalysts also have been corroborated by electrochemical impendence spectra and cyclic voltammetry (CV). Noticeably, TEM investigation further reveals that the N-doped graphitic carbon onions exhibit the high structural stability in iodine-containing medium even subject to hundreds of CV scanning. These results make ONC@MAs the promising candidates to supersede costly Pt as efficient and stable CEs for DSSCs.

  9. Band engineering of GaSbN alloy for solar fuel applications

    NASA Astrophysics Data System (ADS)

    Shi, Qing; Chen, Ying-Chih; Chowdhury, Faqrul A.; Mi, Zetian; Michaud-Rioux, Vincent; Guo, Hong

    2017-08-01

    III-nitride nanostructures possess ideal attributes for harvesting solar energy and generating solar fuel through natural water splitting. The most basic requirement of the latter is to engineer the band gap of the semiconductor to straddle the redox potential of water molecules. To this end, using first principles method we predict that GaN engineered with Sb doping at the dilute limit of 0.3% and/or slightly less is suitable for photochemical water splitting applications. The valence band edge is very significantly enhanced by dilute Sb doping while the conduction band edge is not. The microscopic physics behind the strong band bowing by such a small impurity concentration, not seen in other III-V semiconductors, is revealed by investigating the quantum interaction between Sb impurity states and the host GaN states. The dilute doping limit dictates very large systems to be calculated at the hybrid exchange-correlation level which is made possible by our newly developed first principles approach.

  10. Significant reduction in NiO band gap upon formation of Lix Ni1-x O alloys: applications to solar energy conversion.

    PubMed

    Alidoust, Nima; Toroker, Maytal Caspary; Keith, John A; Carter, Emily A

    2014-01-01

    Long-term sustainable solar energy conversion relies on identifying economical and versatile semiconductor materials with appropriate band structures for photovoltaic and photocatalytic applications (e.g., band gaps of ∼ 1.5-2.0 eV). Nickel oxide (NiO) is an inexpensive yet highly promising candidate. Its charge-transfer character may lead to longer carrier lifetimes needed for higher efficiencies, and its conduction band edge is suitable for driving hydrogen evolution via water-splitting. However, NiO's large band gap (∼ 4 eV) severely limits its use in practical applications. Our first-principles quantum mechanics calculations show band gaps dramatically decrease to ∼ 2.0 eV when NiO is alloyed with Li2O. We show that Lix Ni1-x O alloys (with x=0.125 and 0.25) are p-type semiconductors, contain states with no impurity levels in the gap and maintain NiO's desirable charge-transfer character. Lastly, we show that the alloys have potential for photoelectrochemical applications, with band edges well-placed for photocatalytic hydrogen production and CO2 reduction, as well as in tandem dye-sensitized solar cells as a photocathode. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Charge collection in a-Si:H/a-Si{sub 1-x}C{sub x} multilayers photodetectors

    SciTech Connect

    Jing, T.; Drewray, J.; Hong, W.S.; Lee, H.; Kaplan, S.N.; Mireshghi, A.; Perez-Mendez, V.; Delgado, J.C.; Bertomeu, J.

    1994-04-01

    Amorphous semiconductors have been used as thin film transistor(TFT), solar cell, phototransistors. In this paper we study the charge collected properties of a-Si:H/a-Si{sub 1-x}C:H{sub x} multilayer pin photodiode. In a-Si:H pin photodiode, the photogenerated carriers can be totally collected under strong electric field under reverse bias. However, our measurements show that in the a-Si:H/a-Si{sub l-x}C:H{sub x} multilayer pin photodiode photogenerated electrons and holes drift toward the electrodes under a certain bias, the total collected charge shows no saturation with bias and exhibits a continuous increase with reverse bias. We classify that the device works at two regions. In Region 1, the device behaves like a photodiode. This charge collection efficiency drop from theoretical value may indicate charge capture or confinement at the interfaces and trapping at the a-Si:H potential wells. These charges trapped or confined can be released at the interface and quantum well at higher electric field. In Region 2, above a critical bias voltage, the device works as a breakdown diode with a series photosensitive resistor which contributes higher collection efficiency, namely optical gain greater than unity.

  12. A new flexible a-Si PV module and its application to rooftop PV systems

    SciTech Connect

    Ichikawa, Yukimi; Ihara, Takuro; Hama, Toshio

    1994-12-31

    A novel photovoltaic (PV) module for roof top systems, solar roofing, was proposed. Solar roofing is a flexible amorphous silicon (a-Si) PV sheet having the function of roofing. Tempered glass is used as roof covering material. Technical items for roof top systems using solar roofing were discussed. Preliminary studies on module component materials showed feasibility of solar roofing. The authors designed a construction technology for tempered glass covered roofs. Effects of shadows on PV module upon its performance were also analyzed.

  13. Improving the Photocurrent in Quantum-Dot-Sensitized Solar Cells by Employing Alloy PbxCd1−xS Quantum Dots as Photosensitizers

    PubMed Central

    Yuan, Chunze; Li, Lin; Huang, Jing; Ning, Zhijun; Sun, Licheng; Ågren, Hans

    2016-01-01

    Ternary alloy PbxCd1−xS quantum dots (QDs) were explored as photosensitizers for quantum-dot-sensitized solar cells (QDSCs). Alloy PbxCd1−xS QDs (Pb0.54Cd0.46S, Pb0.31Cd0.69S, and Pb0.24Cd0.76S) were found to substantially improve the photocurrent of the solar cells compared to the single CdS or PbS QDs. Moreover, it was found that the photocurrent increases and the photovoltage decreases when the ratio of Pb in PbxCd1−xS is increased. Without surface protecting layer deposition, the highest short-circuit current density reaches 20 mA/cm2 under simulated AM 1.5 illumination (100 mW/cm2). After an additional CdS coating layer was deposited onto the PbxCd1−xS electrode, the photovoltaic performance further improved, with a photocurrent of 22.6 mA/cm2 and an efficiency of 3.2%. PMID:28335226

  14. Design and Fabrication of Monolithically-Integrated Laterally-Arrayed Multiple Band Gap Solar Cells using Composition-Graded Alloy Nanowires for Spectrum-Splitting Photovoltaic Systems

    NASA Astrophysics Data System (ADS)

    Caselli, Derek

    This dissertation aims to demonstrate a new approach to fabricating solar cells for spectrum-splitting photovoltaic systems with the potential to reduce their cost and complexity of manufacturing, called Monolithically Integrated Laterally Arrayed Multiple Band gap (MILAMB) solar cells. Single crystal semiconductor alloy nanowire (NW) ensembles are grown with the alloy composition and band gap changing continuously across a broad range over the surface of a single substrate in a single, inexpensive growth step by the Dual-Gradient Method. The nanowire ensembles then serve as the absorbing materials in a set of solar cells for spectrum-splitting photovoltaic systems. Preliminary design and simulation studies based on Anderson's model band line-ups were undertaken for CdPbS and InGaN alloys. Systems of six subcells obtained efficiencies in the 32-38% range for CdPbS and 34-40% for InGaN at 1-240 suns, though both materials systems require significant development before these results could be achieved experimentally. For an experimental demonstration, CdSSe was selected due to its availability. Proof-of-concept CdSSe nanowire ensemble solar cells with two subcells were fabricated simultaneously on one substrate. I-V characterization under 1 sun AM1.5G conditions yielded open-circuit voltages (Voc) up to 307 and 173 mV and short-circuit current densities (Jsc) up to 0.091 and 0.974 mA/cm2 for the CdS- and CdSe-rich cells, respectively. Similar thin film cells were also fabricated for comparison. The nanowire cells showed substantially higher Voc than the film cells, which was attributed to higher material quality in the CdSSe absorber. I-V measurements were also conducted with optical filters to simulate a simple form of spectrum-splitting. The CdS-rich cells showed uniformly higher Voc and fill factor (FF) than the CdSe-rich cells, as expected due to their larger band gaps. This suggested higher power density was produced by the CdS-rich cells on the single

  15. Engineered optical properties of silver-aluminum alloy nanoparticles embedded in SiON matrix for maximizing light confinement in plasmonic silicon solar cells.

    PubMed

    Parashar, Piyush K; Komarala, Vamsi K

    2017-10-02

    Self-assembled silver-aluminum (Ag-Al) alloy nanoparticles (NPs) embedded in SiO2, Si3N4, and SiON dielectric thin film matrices explored as a hybrid plasmonic structure for silicon solar cells to maximize light confinement. The Ag2Al NPs prepared by ex-vacuo solid-state dewetting, and alloy formation confirmed by X-ray diffraction and photoelectron spectroscopy analysis. Nanoindentation by atomic force microscopy revealed better surface adhesion of alloy NPs on silicon surface than Ag NPs due to the Al presence. The SiON spacer layer/Ag2Al NPs reduced silicon average reflectance from 22.7% to 9.2% due to surface plasmonic and antireflection effects. The SiON capping layer on NPs reduced silicon reflectance from 9.2% to 3.6% in wavelength region 300-1150 nm with preferential forward light scattering due to uniform Coulombic restoring force on NPs' surface. Minimum reflectance and parasitic absorptance from 35 nm SiON/Ag2Al NPs/25 nm SiON structure reflected in plasmonic cell's photocurrent enhancement from 26.27 mA/cm(2) (of bare cell) to 34.61 mA/cm(2) due to the better photon management. Quantum efficiency analysis also showed photocurrent enhancement of cell in surface plasmon resonance and off-resonance regions of NPs. We also quantified dielectric thin film antireflection and alloy NPs plasmonic effects separately in cell photocurrent enhancement apart from hybrid plasmonic structure role.

  16. Electron cyclotron resonance deposition of amorphous silicon alloy films and devices. Final subcontract report, 1 April 1991--31 March 1992

    SciTech Connect

    Shing, Y.H.

    1992-10-01

    This report describes work to develop a state-of-the-art electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (PECVD) system. The objective was to understand the deposition processes of amorphous silicon (a-Si:H) and related alloys, with a best-effort improvement of optoelectronic material properties and best-effort stabilization of solar cell performance. ECR growth parameters were systematically and extensively investigated; materials characterization included constant photocurrent measurement (CPM), junction capacitance, drive-level capacitance profiling (DLCP), optical transmission, light and dark photoconductivity, and small-angle X-ray scattering (SAXS). Conventional ECR-deposited a-Si:H was compared to a new form, a-Si:(Xe, H), in which xenon gas was added to the ECR plasma. a-Si:(Xe,H) possessed low, stable dark conductivities and high photosensitivites. Light-soaking revealed photodegradation rates about 35% lower than those of comparable radio frequency (rf)-deposited material. ECR-deposited p-type a SiC:H and intrinsic a-Si:H films underwent evaluation as components of p-i-n solar cells with standard rf films for the remaining layers.

  17. High-Efficiency Amorphous Silicon and Nanocrystalline Silicon Based Solar Cells and Modules: Annual Technical Progress Report, 30 January 2006 - 29 January 29, 2007

    SciTech Connect

    Guha, S.; Yang, J.

    2007-07-01

    United Solar used a-Si:H/a-SiGe:H/a-SiGe:H in two manufacturing plants and improved solar efficiency and reduced manufacturing cost by new deposition methods, optimized deposition parameters, and new materials and cell structures.

  18. Lightweight, Flexible Solar Cells on Stainless Steel Foil and Polymer for Space and Stratospheric Applications

    NASA Technical Reports Server (NTRS)

    Beernink, Kevin; Guha, Subhendu; Yang, Jeff; Banerjee, Arindam; Lord, Ken; DeMaggio, Greg; Liu, Frank; Pietka, Ginger; Johnson, Todd; Reinhout, Melanie; Younan, Kais; Wolf, David

    2007-01-01

    The availability of low-cost, lightweight and reliable photovoltaic (PV) modules is an important component in reducing the cost of satellites and spacecraft. In addition, future high-power spacecraft will require lightweight PV arrays with reduced stowage volume. In terms of the requirements for low mass, reduced stowage volume, and the harsh space environment, thin film amorphous silicon (a-Si) alloy cells have several advantages over other material technologies (1). The deposition process is relatively simple, inexpensive, and applicable to large area, lightweight, flexible substrates. The temperature coefficient has been found to be between -0.2 and -0.3 %/degC for high-efficiency triple-junction a-Si alloy cells, which is superior for high temperature operation compared to crystalline Si and triple-junction GaAs/InGaP/Ge devices at 0.53 %/degC and 0.45 %/degC, respectively (2). As a result, the reduction in efficiency at high temperature typical in space conditions is less for a-Si alloy cells than for their crystalline counterparts. Additionally, the a-Si alloy cells are relatively insensitive to electron and proton bombardment. We have shown that defects that are created by electrons with energies between 0.2 to 2 MeV with fluence up to 1x10(exp 15) e/sq cm and by protons with energy in the range 0.3 MeV to 5 MeV with fluence up to 1x10(exp 13) p/sq cm can be annealed out at 70 C in less than 50 hours (1). Further, modules incorporating United Solar s a-Si alloy cells have been tested on the MIR space station for 19 months with only minimal degradation (3). For stratospheric applications, such as the high altitude airship, the required PV arrays are typically of considerably higher power than current space arrays. Airships typically have a large area available for the PV, but weight is of critical importance. As a result, low cost and high specific power (W/kg) are key factors for airship PV arrays. Again, thin-film a-Si alloy solar cell technology is well

  19. Improvement in optical and structural properties of ZnO thin film through hexagonal nanopillar formation to improve the efficiency of a Si-ZnO heterojunction solar cell

    NASA Astrophysics Data System (ADS)

    Maity, S.; Bhunia, C. T.; Sahu, P. P.

    2016-05-01

    We propose to use ZnO thin film with hexagonal nanopillars deposited on Si substrate to enhance the efficiency of a solar cell. It has been treated chemically and thermally and various crystal orientations have been obtained. X-ray diffraction of ZnO thin film shows relatively high intensity peak at 34.3° angle (0 0 2) compared to other orientations. Photoluminescence measurements also confirm a narrow full width at half maximum peak at 3.3 eV, which is more than that obtained for as-grown (broad emission peak around 3.0 eV). The alignment of nanorod structure made by adding a dopant of 0.15 mole fraction of magnesium increases both photon collection and electron collection efficiency. As a result, the solar cell efficiency is enhanced from 10% to 20%.

  20. Investigation of the stability and 1.0 MeV proton radiation resistance of commercially produced hydrogenated amorphous silicon alloy solar cells

    NASA Technical Reports Server (NTRS)

    Lord, Kenneth R., II; Walters, Michael R.; Woodyard, James R.

    1994-01-01

    The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys is reported. A number of different device structures were irradiated with 1.0 MeV protons. The cells were annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters or fluences below 1(exp 14) cm(exp -2); fluences above 1(exp 14) cm(exp -2) require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed in dark I-V measurements. The current mechanisms were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

  1. Deployment shock attenuation of a solar array tape hinge by means of the Martensite detwinning of NiTi Shape Memory Alloy

    NASA Astrophysics Data System (ADS)

    Lee, Chang-Ho; Jeong, Ju-Won; Kim, Young-Jin; Lee, Jung-Ju

    2016-03-01

    This paper presents a new tape hinge for attenuating the deployment shock of a satellite solar array. This hinge uses the Martensite detwinning of Shape Memory Alloy (SMA). To attenuate the deployment shock, a NiTi SMA strip is assembled between two curved steel strips. The attenuation performance of the hinge is analyzed using a SMA detwinning constitutive equation. A prototype of the hinge is manufactured and its characteristics are measured in a bending test and in a deployment test. Finally, the deployment performance of the prototype hinge is investigated on a satellite model. It is shown that the new SMA damped tape hinge can effectively minimize the deployment shock and dynamic perturbation while also maintaining suitable deployment performance.

  2. Investigation of the Stability and 1.0 MeV Proton Radiation Resistance of Commercially Produced Hydrogenated Amorphous Silicon Alloy Solar Cells

    NASA Technical Reports Server (NTRS)

    Lord, Kenneth R., II; Walters, Michael R.; Woodyard, James R.

    1994-01-01

    The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys is reported. A number of different device structures were irradiated with 1.0 MeV protons. The cells were insensitive to proton fluences below 1E12 sq cm. The parameters of the irradiated cells were restored with annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters for fluences below 1E14 sq cm fluences above 1E14 sq cm require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed In dark I-V measurements. The current mechanism were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

  3. Deployment shock attenuation of a solar array tape hinge by means of the Martensite detwinning of NiTi Shape Memory Alloy.

    PubMed

    Lee, Chang-Ho; Jeong, Ju-Won; Kim, Young-Jin; Lee, Jung-Ju

    2016-03-01

    This paper presents a new tape hinge for attenuating the deployment shock of a satellite solar array. This hinge uses the Martensite detwinning of Shape Memory Alloy (SMA). To attenuate the deployment shock, a NiTi SMA strip is assembled between two curved steel strips. The attenuation performance of the hinge is analyzed using a SMA detwinning constitutive equation. A prototype of the hinge is manufactured and its characteristics are measured in a bending test and in a deployment test. Finally, the deployment performance of the prototype hinge is investigated on a satellite model. It is shown that the new SMA damped tape hinge can effectively minimize the deployment shock and dynamic perturbation while also maintaining suitable deployment performance.

  4. Lead-Sulfide-Selenide Quantum Dots and Gold-Copper Alloy Nanoparticles Augment the Light-Harvesting Ability of Solar Cells.

    PubMed

    Das, Aparajita; Deepa, Melepurath; Ghosal, Partha

    2017-01-10

    Lead-sulfide-selenide (PbSSe) quantum dots (QDs) and gold-copper (AuCu) alloy nanoparticles (NPs) were incorporated into a cadmium sulfide (CdS)/titanium oxide (TiO2 ) photoanode for the first time to achieve enhanced conversion of solar energy into electricity. PbSSe QDs with a band gap of 1.02 eV extend the light-harvesting range of the photoanode from the visible region to the near-infrared region. The conduction band (CB) edge of the PbSSe QDs is wedged between the CBs of TiO2 and CdS; this additional level coupled with the good electrical conductivity of the dots facilitate charge transport and collection, and a high power conversion efficiency (PCE) of 4.44 % is achieved for the champion cell with the TiO2 /PbSSe/CdS electrode. Upon including AuCu alloy NPs in the QD-sensitized electrodes, light absorption is enhance by plasmonic and light-scattering effects and also by the injection of hot electrons to the CBs of the QDs. Comparison of the incident photon-to-current conversion efficiency enhancement factors in addition to fluorescence decay and impedance studies reveal that the PbSSe QDs and AuCu alloy NPs promote charge injection to the current collector and increase the photogenerated charges produced, which thus enables the TiO2 /PbSSe/CdS/AuCu cell to deliver the highest PCE of 5.26 % among all the various photoanode compositions used.

  5. Synthesis of Ge nanocrystals embedded in a Si host matrix

    NASA Astrophysics Data System (ADS)

    Ngiam, Shih-Tung; Jensen, Klavs F.; Kolenbrander, K. D.

    1994-12-01

    The synthesis of a composite material consisting of Ge nanoclusters (greater than or equal to 2 nm in diameter) embedded in a Si host matrix is reported. The Ge nanoparticles are produced by pulsed laser ablation and are codeposited in a Si film simultaneously grown by chemical beam epitaxy using disilane. Scanning transmission electron microscopy, combined with energy-dispersive x-ray measurements, show that discrete Ge particles (greater than or equal to 2 nm diameter) are deposited within a polycrystalline Si host matrix. High-resolution transmission electron microscopy reveals that the paricles are crystalline with a lattice spacing corresponding to that of Ge. The enhancement of Si deposition rates from silanes in the presence of Ge, previously demonstrated in chemical vapor deposition of Si(1 - x)Ge(x) alloys, is shown to facilitate the growth of a Si layer around the Ge nanocrystals. The overall composition of the Ge cluster/Si host composite material is determined by Rutherford backscattering measurements.

  6. Stable, high-efficiency amorphous silicon solar cells with low hydrogen content

    SciTech Connect

    Fortmann, C.M.; Hegedus, S.S. )

    1992-12-01

    Results and conclusions obtained during a research program of the investigation of amorphous silicon and amorphous silicon based alloy materials and solar cells fabricated by photo-chemical vapor and glow discharge depositions are reported. Investigation of the effects of the hydrogen content in a-si:H i-layers in amorphous silicon solar cells show that cells with lowered hydrogen content i-layers are more stable. A classical thermodynamic formulation of the Staebler-Wronski effect has been developed for standard solar cell operating temperatures and illuminations. Methods have been developed to extract a lumped equivalent circuit from the current voltage characteristic of a single junction solar cell in order to predict its behavior in a multijunction device.

  7. ELLIPSOMETRIC STUDY OF a-Si:H NUCLEATION, GROWTH, AND INTERFACES

    NASA Astrophysics Data System (ADS)

    Collins, R. W.

    Recent in situ and spectroscopic ellipsometry investigations of hydrogenated amorphous silicon (a-Si:H) nucleation behavior, microstructural evolution, and interface formation are reviewed. An outline of the commonly applied experimental techniques and data analysis is also presented. In situ ellipsometry reveals a nuclei formation and convergence sequence in the first 50Å of a-Si:H growth by rf plasma deposition from silane on c-Si and metal substrates. This sequence provides evidence of favorable growth chemistry that results in material with a low density of structural defects. The influence of deposition parameters and processes on the nucleation and subsequent microstructural evolution of a-Si:H is covered in detail. Among the other topics discussed include: nucleation of microcrystalline Si, evolution of surface roughness on a-Si:H, inert and reactive gas plasma modification of a-Si:H, and formation of a-Si:H heterostructures with SiO2, wide band gap alloys, and Bdoped a-Si:H.

  8. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    NASA Astrophysics Data System (ADS)

    Bullock, J.; Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-10-01

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n+ and p+ surfaces are passivated with SiO2/a-Si:H and Al2O3/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n+) contacts, with SiO2 thicknesses of ˜1.55 nm, achieve the best carrier-selectivity producing a contact resistivity ρc of ˜3 mΩ cm2 and a recombination current density J0c of ˜40 fA/cm2. These characteristics are shown to be stable at temperatures up to 350 °C. The MIS(p+) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  9. Corrosion evaluation of alloys and MCrAlX coatings in molten carbonates for thermal solar applications

    SciTech Connect

    Gomez-Vidal, Judith C.; Noel, John; Weber, Jacob

    2016-12-01

    Stainless steels (SS) 310, 321, 347, Incoloy 800H (In800H), alumina-forming austenitic (AFA-OC6), Ni superalloy Inconel 625 (IN625), and MCrAlX (M: Ni, and/or Co; X: Y, Hf, Si, and/or Ta) coatings were corroded in molten carbonates in N2 and bone-dry CO2 atmospheres. Electrochemical tests in molten eutectics K2CO3-Na2CO3 and Na2CO3-K2CO3-Li2CO3 at temperatures higher than 600 degrees C were evaluated using an open-circuit potential followed by a potentiodynamic polarization sweep to determine the corrosion rates. Because the best-performing alloys at 750 degrees C were In800H followed by SS310, these two alloys were selected as the substrate material for the MCrAlX coatings. The coatings were able to mitigate corrosion in molten carbonates environments. The corrosion of substrates SS310 and In800H was reduced from ~2500 um/year to 34 um/year when coated with high-velocity oxyfuel (HVOF) NiCoCrAlHfSiY and pre-oxidized (air, 900 degrees C, 24 h, 0.5 degrees C/min) before molten carbonate exposure at 700 degrees C in bone-dry CO2 atmosphere. Metallographic characterization of the corroded surfaces showed that the formation of a uniform alumina scale during the pre-oxidation seems to protect the alloy from the molten carbonate attack.

  10. Corrosion evaluation of alloys and MCrAlX coatings in molten carbonates for thermal solar applications

    SciTech Connect

    Gomez-Vidal, Judith C.; Noel, John; Weber, Jacob

    2016-07-30

    Here, stainless steels (SS) 310, 321, 347, Incoloy 800H (In800H), alumina-forming austenitic (AFA-OC6), Ni superalloy Inconel 625 (IN625), and MCrAlX (M: Ni, and/or Co; X: Y, Hf, Si, and/or Ta) coatings were corroded in molten carbonates in N2 and bone-dry CO2 atmospheres. Electrochemical tests in molten eutectics K2CO3-Na2CO3 and Na2CO3-K2CO3-Li2CO3 at temperatures higher than 600 °C were evaluated using an open-circuit potential followed by a potentiodynamic polarization sweep to determine the corrosion rates. Because the best-performing alloys at 750 °C were In800H followed by SS310, these two alloys were selected as the substrate material for the MCrAlX coatings. The coatings were able to mitigate corrosion in molten carbonates environments. The corrosion of substrates SS310 and In800H was reduced from ~2500 um/year to 34 um/year when coated with high-velocity oxyfuel (HVOF) NiCoCrAlHfSiY and pre-oxidized (air, 900 °C, 24 h, 0.5 °C/min) before molten carbonate exposure at 700 °C in bone-dry CO2 atmosphere. Metallographic characterization of the corroded surfaces showed that the formation of a uniform alumina scale during the pre-oxidation seems to protect the alloy from the molten carbonate attack.

  11. Corrosion evaluation of alloys and MCrAlX coatings in molten carbonates for thermal solar applications

    DOE PAGES

    Gomez-Vidal, Judith C.; Noel, John; Weber, Jacob

    2016-07-30

    Here, stainless steels (SS) 310, 321, 347, Incoloy 800H (In800H), alumina-forming austenitic (AFA-OC6), Ni superalloy Inconel 625 (IN625), and MCrAlX (M: Ni, and/or Co; X: Y, Hf, Si, and/or Ta) coatings were corroded in molten carbonates in N2 and bone-dry CO2 atmospheres. Electrochemical tests in molten eutectics K2CO3-Na2CO3 and Na2CO3-K2CO3-Li2CO3 at temperatures higher than 600 °C were evaluated using an open-circuit potential followed by a potentiodynamic polarization sweep to determine the corrosion rates. Because the best-performing alloys at 750 °C were In800H followed by SS310, these two alloys were selected as the substrate material for the MCrAlX coatings. The coatingsmore » were able to mitigate corrosion in molten carbonates environments. The corrosion of substrates SS310 and In800H was reduced from ~2500 um/year to 34 um/year when coated with high-velocity oxyfuel (HVOF) NiCoCrAlHfSiY and pre-oxidized (air, 900 °C, 24 h, 0.5 °C/min) before molten carbonate exposure at 700 °C in bone-dry CO2 atmosphere. Metallographic characterization of the corroded surfaces showed that the formation of a uniform alumina scale during the pre-oxidation seems to protect the alloy from the molten carbonate attack.« less

  12. Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices

    NASA Astrophysics Data System (ADS)

    Srour, H.; Salvestrini, J. P.; Ahaitouf, A.; Gautier, S.; Moudakir, T.; Assouar, B.; Abarkan, M.; Hamady, S.; Ougazzaden, A.

    2011-11-01

    Large internal gains that can be obtained in wide band gap semiconductors-based (GaN and ZnO types) Schottky and/or metal-semiconductor-metal photodetectors are generally accompanied by large dark current and time response. We show that, using quasi-alloy of BGaN/GaN superlattices as the active layer, the dark current can be lowered while maintaining high internal gain (up to 3 × 104) for optical power in the nW range and low time response (few tens of ns) for optical power in the W range. Furthermore, the boron incorporation allows the tuning of the cutoff wavelength.

  13. Binary synaptic connections based on memory switching in a-Si:H for artificial neural networks

    NASA Technical Reports Server (NTRS)

    Thakoor, A. P.; Lamb, J. L.; Moopenn, A.; Khanna, S. K.

    1987-01-01

    A scheme for nonvolatile associative electronic memory storage with high information storage density is proposed which is based on neural network models and which uses a matrix of two-terminal passive interconnections (synapses). It is noted that the massive parallelism in the architecture would require the ON state of a synaptic connection to be unusually weak (highly resistive). Memory switching using a-Si:H along with ballast resistors patterned from amorphous Ge-metal alloys is investigated for a binary programmable read only memory matrix. The fabrication of a 1600 synapse test array of uniform connection strengths and a-Si:H switching elements is discussed.

  14. Binary synaptic connections based on memory switching in a-Si:H for artificial neural networks

    NASA Technical Reports Server (NTRS)

    Thakoor, A. P.; Lamb, J. L.; Moopenn, A.; Khanna, S. K.

    1987-01-01

    A scheme for nonvolatile associative electronic memory storage with high information storage density is proposed which is based on neural network models and which uses a matrix of two-terminal passive interconnections (synapses). It is noted that the massive parallelism in the architecture would require the ON state of a synaptic connection to be unusually weak (highly resistive). Memory switching using a-Si:H along with ballast resistors patterned from amorphous Ge-metal alloys is investigated for a binary programmable read only memory matrix. The fabrication of a 1600 synapse test array of uniform connection strengths and a-Si:H switching elements is discussed.

  15. Very thin and stable thin-film silicon alloy triple junction solar cells by hot wire chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Veldhuizen, L. W.; Schropp, R. E. I.

    2016-08-01

    We present a silicon-based triple junction solar cell that requires a deposition time of less than 15 min for all photoactive layers. As a low-bandgap material, we used thin layers of hydrogenated amorphous silicon germanium with lower band gap than commonly used, which is possible due to the application of hot wire chemical vapor deposition. The triple junction cell shows an initial energy conversion efficiency exceeding 10%, and with a relative performance stability within 6%, the cell shows a high tolerance to light-induced degradation. With these results, we help to demonstrate that hot wire chemical vapor deposition is a viable deposition method for the fabrication of low-cost solar cells.

  16. A SiGe/Si multiple quantum well avalanche photodetector

    NASA Astrophysics Data System (ADS)

    Sun, Po-Hsing; Chang, Shu-Tong; Chen, Yu-Chun; Lin, Hongchin

    2010-10-01

    The present work investigates the performance of APDs with a SiGe/Si multi-quantum well (MQW) structure, which was fabricated using ultrahigh-vacuum chemical vapor deposition (UHV/CVD). Absorption of radiation and avalanche multiplication occur in both SiGe/Si MQW and the i-SiGe layer. Intense photoluminescence (PL) from strained, epitaxial SiGe alloys grown using UHV/CVD was reported with multiple SiGe/Si MQW and i-SiGe layer. It was found that the avalanche multiplication occurred at about 7 V, when exceeding 7 V, the responsiveness and quantum efficiency rapidly increased. An APD consisting of an epitaxial SiGe/Si MQW as the active absorption layer with intense response in the 800-1500 nm wavelength range is also demonstrated.

  17. Low-cost Cr doped Pt3Ni alloy supported on carbon nanofibers composites counter electrode for efficient dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Xiao, Junying; Cui, Midou; Wang, Mingkun; Sui, Huidong; Yang, Kun; Li, Ling; Zhang, Wenming; Li, Xiaowei; Fu, Guangsheng; Hagfeldt, Anders; Zhang, Yucang

    2016-10-01

    Pt3Ni alloy supported by carbon nanofibers (CNs) composites (Pt3Ni/CNs) synthesized by a simple solvothermal process was introduced into dye-sensitized solar cells (DSCs) as counter electrode (CE) for the first time, and the DSCs based on Pt3Ni/CNs CE obtained a power conversion efficiency (PCE) of 8.34%. To enhance the catalytic activity of Pt3Ni/CNs composites, transition metal chrome (Cr) was doped in Pt3Ni/CNs to synthesize the composites of Cr-Pt3Ni/CNs using the same method. Due to the high electrocatalytic activity and rapid charge transfer ability, the PCE of the DSCs employing Cr-Pt3Ni/CNs as CE increased to 8.76%, which was much higher than that of Pt CE (7.04%) measured in the same condition. The impressive results along with low cost and simple synthesis process demonstrated transition metal doping was a promising method to produce substitutes for Pt to reduce the cost and increase the PCE of DSCs.

  18. Improved Performance of Polymer Solar Cells by Thermal Evaporation of AgAl Alloy Nanostructures into the Hole-Transport Layer.

    PubMed

    Wang, Jinfeng; Jia, Xiangkun; Zhou, Jianping; Pan, Likun; Huang, Sumei; Chen, Xiaohong

    2016-10-05

    The performance characteristics of polymer solar cells (PSCs) incorporated with AgAl and Ag nanostructures and MoO3 spacer layers were investigated. The power conversion efficiency (PCE) of PSCs is sensitive to the nominal thicknesses of the AgAl nanostructures and the MoO3 spacer layer. The PCE of a PSC with a 3-nm-thick layer of AgAl nanostructures and a 1-nm-thick MoO3 isolation layer reached 9.79%, which is higher than the PCE (8.55%) of the reference PSC without metal nanostructures. Compared to PSCs with Ag nanostructures, PSCs with AgAl nanostructures showed better stability and still retained 60% of their initial PCE values after aging for 120 days in air without encapsulation. The enhanced stability of the PSCs is attributed to the formation of AlOx, which can inhibit the diffusion of Ag atoms into the neighboring layer. The localized surface plasmonic resonance (LSPR) effect of AgAl nanostructures was retained by inserting an only 1-nm-thick MoO3 spacer layer between the metal nanostructures and the metal electrode. Our work has demonstrated that using AgAl alloy instead of Ag as plasmonic nanostructures is a better strategy for improving the performance of PSCs, especially in terms of the stability of the cells.

  19. Highly Efficient and Air Stable Inverted Polymer Solar Cells Using LiF-Modified ITO Cathode and MoO3/AgAl Alloy Anode.

    PubMed

    Jia, Xiangkun; Jiang, Ziyao; Chen, Xiaohong; Zhou, Jianping; Pan, Likun; Zhu, Furong; Sun, Zhuo; Huang, Sumei

    2016-02-17

    The performance and air stability of inverted polymer solar cells (PSCs) were greatly improved using a combination of LiF-modified ITO cathode and a MoO3/AgAl alloy anode. The power conversion efficiency (PCE) of PSCs with AgAl contact reached 9.4%, which is higher than that of the cells with Ag (8.8%) and Al electrode (7.6%). The PCE of AgAl-based PSCs can further increase up to 10.3% through incorporating an ultrathin LiF-modified ITO. AgAl-based cells also exhibit a superior stability compared to the cells with Ag and Al contacts. PCE of the AgAl-based cells without encapsulation remains 78% of its original value after the cells were aged for 380 days in air. The presence of a LiF-modified ZnO interlayer between ITO and the organic active layer improves the charge collection. The improvement in PCE and stability of the AgAl-based cells is primarily attributed to the formation of AlOx at the MoO3/AgAl interface, preventing Ag diffusion and improving the built-in potential across the active layer in the cells.

  20. Effect of ZnTe and CdZnTe Alloys at the Back Contact of 1-μm-Thick CdTe Thin Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Amin, Nowshad; Yamada, Akira; Konagai, Makoto

    2002-05-01

    N2-doped ZnTe was introduced onto 1-μm-thick CdTe absorbers in order to reduce the carrier recombination at the back contact of CdS/CdTe/C/Ag configuration solar cells. ZnTe films were grown by molecular beam epitaxy (MBE) on GaAs and Corning glass substrates to investigate the characteristics of the films. Epitaxial growth of ZnTe was realized on GaAs substrates and a hole concentration of 8 × 1018 cm-3 with a resistivity of 0.045 Ω \\cdotcm was achieved as a result of nitrogen doping. In contrast, polycrystalline ZnTe films were grown on Corning glass and CdTe thin films. Dark and photoconductivity of ZnTe films increased to 1.43 × 10-5 S/cm and 1.41 × 10-4 S/cm, respectively, while the Zn to Te ratio was decreased to 0.25 during MBE growth. These ZnTe films with different thicknesses were inserted into close-spaced sublimation (CSS)-grown 1-μm-thick CdTe solar cells. A conversion efficiency of 8.31% (Voc: 0.74 V, Jsc: 22.98 mA/cm2, FF: 0.49, area: 0.5 cm2) was achieved for a 0.2-μm-thick ZnTe layer with a cell configuration of CdS/CdTe/ZnTe/Cu-doped-C/Ag. Furthermore, to overcome the problem of possible recombination loss in the interface layer of CdTe and ZnTe, the intermediate ternary CdZnTe is investigated. The compositional factor in Cd1-xZnxTe:N alloy is varied and the dependence of the conductivity is evaluated. For instance, Cd0.5Zn0.5Te:N, with dark and photoconductivity of 2.13 × 10-6 and 2.9 × 10-5 S/cm, respectively, is inserted at the back contact of a 1-μm-thick CdTe solar cell. A conversion efficiency of 7.46% (Voc: 0.68 V, Jsc: 22.60 mA/cm2, FF: 0.49, area: 0.086 cm2) was achieved as the primary result for a 0.2-μm-thick Cd0.5Zn0.5Te:N layer with the cell configuration of CdS/CdTe/Cd0.5Zn0.5Te:N/Au.

  1. Laser scribing system for amorphous silicon solar cells

    NASA Astrophysics Data System (ADS)

    Wang, Youliang; Shi, Yaling; Su, Xiaorong; Yan, Shuming; Xu, Hong

    1993-01-01

    In this paper, we describe a laser scribing system for the fabrication of a-Si solar cells. Additionally, we provide a theoretical analysis of the system. The system was used to scribe the TCO and a-Si films.

  2. Study of Magnetic Alloys: Critical Phenomena.

    DTIC Science & Technology

    MAGNETIC ALLOYS, TRANSPORT PROPERTIES), ELECTRICAL RESISTANCE, SEEBECK EFFECT , MAGNETIC PROPERTIES, ALUMINUM ALLOYS, COBALT ALLOYS, GADOLINIUM ALLOYS, GOLD ALLOYS, IRON ALLOYS, NICKEL ALLOYS, PALLADIUM ALLOYS, PLATINUM ALLOYS, RHODIUM ALLOYS

  3. Significant Reduction in NiO Band Gap Upon Formation of LixNi1-xO alloys: Applications To Solar Energy Conversion

    SciTech Connect

    Alidoust, Nima; Toroker, Maytal Caspary; Keith, John A.; Carter, Emily A.

    2013-11-21

    Long-term sustainable solar energy conversion relies on identifying economical and versatile semiconductor materials with appropriate band structures for photovoltaic and photocatalytic applications (e.g., band gaps of ~1.5–2.0 eV). Nickel oxide (NiO) is an inexpensive yet highly promising candidate. Its charge-transfer character may lead to longer carrier lifetimes needed for higher efficiencies, and its conduction band edge is suitable for driving hydrogen evolution via water-splitting. However, NiO’s large band gap (~4 eV) severely limits its use in practical applications. Our first-principles quantum mechanics calculations show band gaps dramatically decrease to ~2.0 eV when NiO is alloyed with Li2O. In this paper, we show that LixNi1-xO alloys (with x=0.125 and 0.25) are p-type semiconductors, contain states with no impurity levels in the gap and maintain NiO’s desirable charge-transfer character. Lastly, we show that the alloys have potential for photoelectrochemical applications, with band edges well-placed for photocatalytic hydrogen production and CO2 reduction, as well as in tandem dye-sensitized solar cells as a photocathode.

  4. Integral bypass diodes in an amorphous silicon alloy photovoltaic module

    NASA Technical Reports Server (NTRS)

    Hanak, J. J.; Flaisher, H.

    1991-01-01

    Thin-film, tandem-junction, amorphous silicon (a-Si) photovoltaic modules were constructed in which a part of the a-Si alloy cell material is used to form bypass protection diodes. This integral design circumvents the need for incorporating external, conventional diodes, thus simplifying the manufacturing process and reducing module weight.

  5. Amorphous-silicon thin-film heterojunction solar cells

    SciTech Connect

    Cretella, M. C.; Gregory, J. A.; Sandstrom, D. B.; Paul, W.

    1981-01-01

    The investigation of amorphous silicon materials at MTSEC has had two major thrusts: (1) to improve the amorphous material, i.e., obtain a low state density in the gap, improve the carrier collection depth and diminish non-radiative recombinations; and (2) to attempt to understand and improve on the limitations of the junction devices while evaluating the amorphous silicon materials. In the first of these efforts, the investigation has continued to examine the modifications to the a-Si(H) network by alloying silicon with other group IVA elements, either in binary or ternary compositions, and/or by replacing the hydrogenation for defect compensation with a combination of hydrogenation and alkylation or hydrogenation and halogenation. The doped junction layers are being examined in an attempt to determine the limiting characteristics of the junctions in solar cell devices of these amorphous materials. Amorphous alloys of Si-Ge, Si-C, Si-Sn were prepared as well as ternary compositions of Si-Ge-C and Si-Sn-C. In addition, Na vapor was added to the gas feed to deposit a-Si(Na, H) films, and to prepare Si-Sn, fluoride was added along with the tin by vapor additions of SnF/sub 4/ to the gas feed. The optical properties of these materials were measured, and structural and compositional information was obtained from the IR vibrational spectra using the scanning electron microscope and from analyses using scanning Auger microscopy. Electrical measurements have included the dark conductivity and the photo conductivity under room fluorescent light and at AM1 conditions. With alloys that displayed promising photoconductive properties n-i-p devices were prepared to assess the solar cell properties. Details are presented. (WHK)

  6. Stable, high-efficiency amorphous silicon solar cells with low hydrogen content. Annual subcontract report, 1 March 1991--31 January 1992

    SciTech Connect

    Fortmann, C.M.; Hegedus, S.S.

    1992-12-01

    Results and conclusions obtained during a research program of the investigation of amorphous silicon and amorphous silicon based alloy materials and solar cells fabricated by photo-chemical vapor and glow discharge depositions are reported. Investigation of the effects of the hydrogen content in a-si:H i-layers in amorphous silicon solar cells show that cells with lowered hydrogen content i-layers are more stable. A classical thermodynamic formulation of the Staebler-Wronski effect has been developed for standard solar cell operating temperatures and illuminations. Methods have been developed to extract a lumped equivalent circuit from the current voltage characteristic of a single junction solar cell in order to predict its behavior in a multijunction device.

  7. Annealing characteristics of amorphous silicon alloy solar cells irradiated with 1.00 MeV protons

    NASA Technical Reports Server (NTRS)

    Abdulaziz, Salman S.; Woodyard, James R.

    1991-01-01

    Amorphous Si:H and amorphous Si sub x, Ge sub (1-x):H solar cells were irradiated with 1.00 MeV proton fluences in the range of 1.00E14 to 1.25E15 cm (exp -2). Annealing of the short circuit current density was studied at 0, 22, 50, 100, and 150 C. Annealing times ranged from an hour to several days. The measurements confirmed that annealing occurs at 0 C and the initial characteristics of the cells are restored by annealing at 200 C. The rate of annealing does not appear to follow a simple nth order reaction rate model. Calculations of the short-circuit current density using quantum efficiency measurements and the standard AM1.5 global spectrum compare favorably with measured values. It is proposed that the degradation in J sub sc with irradiation is due to carrier recombination through the fraction of D (o) states bounded by the quasi-Fermi energies. The time dependence of the rate of annealing of J sub sc does appear to be consistent with the interpretation that there is a thermally activated dispersive transport mechanism which leads to the passivation of the irradiation induced defects.

  8. Correlation between interface traps and paramagnetic defects in c-Si/a-Si:H heterojunctions

    NASA Astrophysics Data System (ADS)

    Thoan, N. H.; Jivanescu, M.; O'Sullivan, B. J.; Pantisano, L.; Gordon, I.; Afanas'ev, V. V.; Stesmans, A.

    2012-04-01

    Low-temperature (77 K) capacitance-voltage measurements are proposed as a technique to quantify the densities of traps in c-Si/a-Si:H heterojunction solar cell structures. By comparing the inferred trap densities to the results of electron spin resonance spectroscopy, we found that the dangling bonds of silicon atoms at the surface of the (100)Si substrate (Pb0 centers) and in a-Si:H layer (D-centers) provide the most significant contributions to the density of traps.

  9. Metastability of a-SiOx:H thin films for c-Si surface passivation

    NASA Astrophysics Data System (ADS)

    Serenelli, L.; Martini, L.; Imbimbo, L.; Asquini, R.; Menchini, F.; Izzi, M.; Tucci, M.

    2017-01-01

    The adoption of a-SiOx:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiNx on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiOx:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Sisbnd H and Sisbnd O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm2. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiOx:H/c-Si/a-SiOx:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiOx passivation properties, was furthermore considered. In particular we monitored the UV light soaking effect on c-Si wafers after a-SiOx:H coating by PECVD and after a thermal annealing treatment at 300 °C for 30 min, having selected these conditions on the basis of the study of the effect due to different temperatures and durations. We correlated the lifetime evolution and the metastability effect of thermal annealing to the a-SiOx:H/c-Si interface considering the evolution

  10. Design of Semiconducting Tetrahedral Mn1-xZnxO Alloys and Their Application to Solar Water Splitting

    SciTech Connect

    Peng, Haowei; Ndione, Paul F.; Ginley, David S.; Zakutayev, A.; Lany, Stephen

    2015-05-18

    Both structure-property and composition-structure relationships are exploited to design and realize novel wurtzite-structure Mn1-xZnxO alloys. A proof of principle is provided that corroborates, in particular, the predicted favorable hole-transport properties of these alloys.

  11. Alloy materials

    DOEpatents

    Hans Thieme, Cornelis Leo; Thompson, Elliott D.; Fritzemeier, Leslie G.; Cameron, Robert D.; Siegal, Edward J.

    2002-01-01

    An alloy that contains at least two metals and can be used as a substrate for a superconductor is disclosed. The alloy can contain an oxide former. The alloy can have a biaxial or cube texture. The substrate can be used in a multilayer superconductor, which can further include one or more buffer layers disposed between the substrate and the superconductor material. The alloys can be made a by process that involves first rolling the alloy then annealing the alloy. A relatively large volume percentage of the alloy can be formed of grains having a biaxial or cube texture.

  12. {\\rm{ZnO}}_{1-{{x}}}{\\rm{Te}}_{{{x}}} and {\\rm{ZnO}}_{1-{{x}}}\\rm{S}_{{{x}}} semiconductor alloys as competent materials for opto-electronic and solar cell applications: a comparative analysis

    NASA Astrophysics Data System (ADS)

    Das, Utsa; Pal, Partha P.

    2017-08-01

    ZnO1-x Te x ternary alloys have great potential to work as a photovoltaic (PV) absorber in solar cells. ZnO1-x S x is also a ZnO based alloy that have uses in solar cells. In this paper we report the comparative study of various parameters of ZnO1-x Te x and ZnO1-x S x for selecting it to be a competent material for solar cell applications. The parameters are mainly being calculated using the well-known VCA (virtual crystal approximation) and VBAC (Valence Band Anti-Crossing) model. It was certainly being analysed that the incorporation of Te atoms produces a high band gap lower than S atoms in the host ZnO material. The spin-orbit splitting energy value of ZnO1-x Te x was found to be higher than that of ZnO1-x S x . Beside this, the strain effects are also higher in ZnO1-x Te x than ZnO1-x S x . The remarkable notifying result which the paper is reporting is that at a higher percentage of Te atoms in ZnO1-x Te x , the spin-orbit splitting energy value rises above the band gap value, which signifies a very less internal carrier recombination that decreases the leakage current and increases the efficiency of the solar cell. Moreover, it also covers a wide wavelength range compared to ZnO1-x S x .

  13. Research on silicon-carbon alloys and interfaces. Final subcontract report, 15 February 1991--31 July 1994

    SciTech Connect

    Abelson, J.R.

    1995-07-01

    This report describes work performed to develop improved p-type wide-band-gap hydrogenated amorphous silicon-carbon alloy (a-Si{sub 1-x}C{sub x:}H) thin films and interfaces for the ``top junction`` in hydrogenated amorphous silicon (a-Si:H)-based p-i-n solar cells. We used direct current reactive magnetron sputtering to deposit undoped a-Si{sub 1-x}C{sub x}H films with a Tauc band gap E{sub g} of 1.90 eV, a sub-band-gap absorption of 0.4 (at 1.2 eV), an Urbach energy of 55 MeV, an ambipolar diffusion length of 100 nm, an air-mass-one photoconductivity of 10{sup {minus}6}/{Omega}-cm, and a dark conductivity of 8{times} 1O{sup {minus}11}/{Omega}-cm. p{sup +}a-Si{sub 1-x}C{sub x}:H films with a Tauc band gap of 1.85 eV have a dark conductivity of 8 {times} 10{sup {minus}6}/{Omega}-cm and thermal activation energy of 0.28 eV. We used in-situ spectroscopic ellipsometry and post-growth X-ray photoelectron spectroscopy to determine the relative roles of H and Si in the chemical reduction of SnO{sub 2} in the early stages of film growth. We used in-situ spectroscopic ellipsometry to show that a-Si:H can be transformed into {mu}c-Si:H in a subsurface region under appropriate growth conditions. We also determined substrate cleaning and ion bombardment conditions which improve the adhesion of a-Si{sub 1-x}C{sub x}:H films.

  14. Optical absorptions in ZnO/a-Si distributed Bragg reflectors

    NASA Astrophysics Data System (ADS)

    Chen, Aqing; Chen, Zhian; Zhu, Kaigui; Ji, Zhenguo

    2017-01-01

    The distributed Bragg reflectors (DBRs) consisting of alternating layers of ZnO and heavy doped amorphous silicon (a-Si) have been fabricated by magnetron sputtering. It is novel to find that the optical absorptions exist in the stopband of the DBRs, and that many discrete strong optical absorption peaks exist in the wavelength range of visible to near-infrared. The calculated results by FDTD show that the absorptions in the stopband mainly exist in the first a-Si layer, and that the light absorbed by other a-Si layers inside contributes to the two absorption peaks in near-infrared range. The strong absorptions ranged from visible to infrared open new possibilities to the enhancement of the performance of amorphous silicon solar cells.

  15. High-rate deposition of a-SiNx:H for photovoltaic applications by the expanding thermal plasma

    NASA Astrophysics Data System (ADS)

    Kessels, W. M. M.; Hong, J.; van Assche, F. J. H.; Moschner, J. D.; Lauinger, T.; Soppe, W. J.; Weeber, A. W.; Schram, D. C.; van de Sanden, M. C. M.

    2002-09-01

    Driven by the need for improvement of the economical competitiveness of photovoltaic energy, the feasibility of high-rate (>1 nm/s) amorphous silicon nitride (a-SiNx):H deposited by the expanding thermal plasma (ETP) technique has been explored with respect to the application of the a-SiNx:H as functional antireflection coating on crystalline silicon solar cells. First, the deposition rate and the a-SiNx:H film properties, such as refractive index, Si, N, and H atomic density, and hydrogen bonding configurations, have been mapped for various operating conditions. From ellipsometry, elastic recoil detection, and infrared spectroscopy, it has been shown that deposition rates up to 20 nm/s can be reached with a fair film homogeneity and that the refractive index and the N/Si ratio can fully be tuned by the plasma composition while the hydrogen content can be controlled by the substrate temperature. Good antireflection coating performance of the a-SiNx:H has therefore been observed for monocrystalline silicon solar cells. These cells with ETP a-SiNx:H yielded only slightly lower conversion efficiencies than high-quality reference cells due to a much lower degree of surface passivation. This lack of surface passivation has also been shown in a separate study on the surface recombination velocity. Furthermore, it has been tested whether the a-SiNx:H films lead to silicon bulk passivation, which is essential for solar cells based on cheaper, defective silicon stock material such as multicrystalline silicon. It has been proven that bulk passivation of the cells is indeed induced by the high-rate ETP deposited a-SiNx:H after a high-temperature step in which the metal contacts of the cells are processed. These results make the ETP technique an interesting candidate for high-throughput processing of competitive silicon solar cells. copyright 2002 American Vacuum Society.

  16. Broad spectrum solar cell

    DOEpatents

    Walukiewicz, Wladyslaw; Yu, Kin Man; Wu, Junqiao; Schaff, William J.

    2007-05-15

    An alloy having a large band gap range is used in a multijunction solar cell to enhance utilization of the solar energy spectrum. In one embodiment, the alloy is In.sub.1-xGa.sub.xN having an energy bandgap range of approximately 0.7 eV to 3.4 eV, providing a good match to the solar energy spectrum. Multiple junctions having different bandgaps are stacked to form a solar cell. Each junction may have different bandgaps (realized by varying the alloy composition), and therefore be responsive to different parts of the spectrum. The junctions are stacked in such a manner that some bands of light pass through upper junctions to lower junctions that are responsive to such bands.

  17. Processing and modeling issues for thin-film solar cell devices: Annual subcontract report, January 16, 1995 -- January 15, 1996

    SciTech Connect

    Birkmire, R W; Phillips, J E; Buchanan, W A; Eser, E; Hegedus, S S; McCandless, B E; Meyers, P V; Shafarman, W N

    1996-08-01

    The overall mission of the Institute of Energy Conversion is the development of thin film photovoltaic cells, modules, and related manufacturing technology and the education of students and professionals in photovoltaic technology. The objectives of this four-year NREL subcontract are to advance the state of the art and the acceptance of thin film PV modules in the areas of improved technology for thin film deposition, device fabrication, and material and device characterization and modeling, relating to solar cells based on CuInSe{sub 2} and its alloys, on a-Si and its alloys, and on CdTe. In the area of CuInSe{sub 2} and its alloys, EEC researchers have produced CuIn{sub 1-x}GaxSe{sub 2} films by selenization of elemental and alloyed films with H{sub 2}Se and Se vapor and by a wide variety of process variations employing co-evaporation of the elements. Careful design, execution and analysis of these experiments has led to an improved understanding of the reaction chemistry involved, including estimations of the reaction rate constants. Investigation of device fabrication has also included studies of the processing of the Mo, US and ZnO deposition parameters and their influence on device properties. An indication of the success of these procedures was the fabrication of a 15% efficiency CuIn{sub 1-x}GaxSe{sub 2} solar cell.

  18. The structure of a-Si 1-xSn x:H thin films

    NASA Astrophysics Data System (ADS)

    Edwards, A. M.; Fairbanks, M. C.; Newport, R. J.

    1990-12-01

    The doping of a-Si:H with Sn is known to modify the electrical and optical properties of the material. The optical band gap decreases as the doping level is increased, however, there is no insulator-metal transition of the type observed, for example, when transition metals are used as dopants. In order to increase the understanding of the conductivity processes that occur in a-Si:metal:H alloys we have measured the atomic scale structure of a series of a-Si 1- xSn x:H thin-films using EXAFS. Samples were prepared by RF reactive co-sputtering and both Si and Sn K-edge EXAFS examined. The results indicate that the Sn atoms are substituted randomly into the a-Si tetrahedral random network. Both Si and Sn atoms retain fourfold co-ordination over the composition range studied (0⩽ x⩽0.18). In contrast to results obtained using transition metal dopants there is no local modification of the tetrahedral random network.

  19. Utilization of amorphous silicon carbide (a-Si:C:H) as a resistive layer in gas microstrip detectors

    SciTech Connect

    Hong, W.S.; Cho, H.S.; Perez-Mendez, V.; Gong, W.G.

    1995-04-01

    Thin semiconducting films of hydrogenated amorphous silicon (a-Si:H) and its carbon alloy (a-Si:C:H) were applied to gas microstrip detectors in order to control gain instabilities due to charges on the substrate. Thin ({approximately}100nm) layers of a-Si:H or p-doped a-Si:C:H were placed either over or under the electrodes using the plasma enhanced chemical vapor deposition (PECVD) technique to provide the substrate with a suitable surface conductivity. By changing the carbon content and boron doping density, the sheet resistance of the a-Si:C:H coating could be successfully controlled in the range of 10{sup 12} {approximately} 10{sup 17} {Omega}/{four_gradient}, and the light sensitivity, which causes the resistivity to vary with ambient light conditions, was minimized. An avalanche gain of 5000 and energy resolution of 20% FWHM were achieved and the gain remained constant over a week of operation. A-Si:C:H film is an attractive alternative to ion-implanted or semiconducting glass due to the wide range of resistivities possible and the feasibility of making deposits over a large area at low cost.

  20. Electrospun a-Si using Liquid Silane/Polymer Inks

    SciTech Connect

    D.L. Schulz; J.M. Hoey; J. Smith; J. Lovaasen; C. Braun; X. Dai; K. Anderson; A. Elangovan; X. Wu; S. Payne; K. Pokhodnya; I. Akhatov; L. Pederson; P. Boudjouk

    2010-12-01

    Amorphous silicon nanowires (a-SiNWs) were prepared by electrospinning cyclohexasilane (Si{sub 6}H{sub 12}) admixed with polymethylmethacrylate (PMMA) in toluene. Raman spectroscopy characterization of these wires (d {approx} 50-2000 nm) shows 350 C treatment yields a-SiNWs. Porous a-SiNWs are obtained using a volatile polymer.

  1. Electrospun a-Si using Liquid Silane/Polymer Inks

    SciTech Connect

    Doug Schulz

    2010-12-09

    Amorphous silicon nanowires (a-SiNWs) were prepared by electrospinning cyclohexasilane (Si{sub 6}H{sub 12}) admixed with polymethylmethacrylate (PMMA) in toluene. Raman spectroscopy characterization of these wires (d {approx} 50-2000 nm) shows 350 C treatment yields a-SiNWs. Porous a-SiNWs are obtained using a volatile polymer.

  2. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    SciTech Connect

    Bullock, J. Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-10-28

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n{sup +} and p{sup +} surfaces are passivated with SiO{sub 2}/a-Si:H and Al{sub 2}O{sub 3}/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n{sup +}) contacts, with SiO{sub 2} thicknesses of ∼1.55 nm, achieve the best carrier-selectivity producing a contact resistivity ρ{sub c} of ∼3 mΩ cm{sup 2} and a recombination current density J{sub 0c} of ∼40 fA/cm{sup 2}. These characteristics are shown to be stable at temperatures up to 350 °C. The MIS(p{sup +}) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  3. Recent progress in Si thin film technology for solar cells

    NASA Astrophysics Data System (ADS)

    Kuwano, Yukinori; Nakano, Shoichi; Tsuda, Shinya

    1991-11-01

    Progress in Si thin film technology 'specifically amorphous Si (a-Si) and polycrystalline Si (poly-Si) thin film' for solar cells is summarized here from fabrication method, material, and structural viewpoints. In addition to a-Si, primary results on poly-Si thin film research are discussed. Various applications for a-Si solar cells are mentioned, and consumer applications and a-Si solar cell photovoltaic systems are introduced. New product developments include see-through solar cells, solar cell roofing tiles, and ultra-light flexible solar cells. As for new systems, air conditioning equipment powered by solar cells is described. Looking to the future, the proposed GENESIS project is discussed.

  4. Casting alloys.

    PubMed

    Wataha, John C; Messer, Regina L

    2004-04-01

    Although the role of dental casting alloys has changed in recent years with the development of improved all-ceramic materials and resin-based composites, alloys will likely continue to be critical assets in the treatment of missing and severely damaged teeth. Alloy shave physical, chemical, and biologic properties that exceed other classes of materials. The selection of the appropriate dental casting alloy is paramount to the long-term success of dental prostheses,and the selection process has become complex with the development of many new alloys. However, this selection process is manageable if the practitioner focuses on the appropriate physical and biologic properties, such as tensile strength, modulus of elasticity,corrosion, and biocompatibility, and avoids dwelling on the less important properties of alloy color and short-term cost. The appropriate selection of an alloy helps to ensure a longer-lasting restoration and better oral health for the patient.

  5. Doping control of GaAsPN alloys by molecular beam epitaxy for monolithic III-V/Si tandem solar cells

    NASA Astrophysics Data System (ADS)

    Yamane, Keisuke; Sato, Kento; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

    2017-09-01

    This paper presents intentional doping of n- and p-type GaAs0.19P0.76N0.05 alloys by molecular beam epitaxy, followed by rapid thermal annealing (RTA). Sulfur and magnesium were respectively used as n- and p-type dopants. The carrier concentrations were controllable between 1017 and 1019 cm-3 by adjusting the dopant cell temperature. It was revealed that Hall mobility of the n-type GaAsPN alloys was increased by the RTA process compared to as-grown ones, whereas no significant difference was apparent in the p-type alloys. It is believed that improvement of the conduction band spatial uniformity was mainly responsible for the Hall mobility increase of the n-type GaAsPN alloys by RTA. Finally, a p-i-n GaAsPN diode structure was grown on n-type GaP substrates. A current-voltage characteristic showed a typical rectifying curve with a built-in voltage of 1.8 V and an ideality factor of 1.45. The reverse saturation current was estimated to be less than 10 nA/cm2.

  6. Molecular hydrogen in a-Si: H

    NASA Astrophysics Data System (ADS)

    Carlos, W. E.; Taylor, P. C.

    1982-01-01

    Recently Conradi and Norberg have proposed that a small density of molecular hydrogen in a-Si: H films provides the relaxation mechanism which is responsible for a minimum in the proton spin-lattice relaxation time T1 at about 30 K. Although we are unable to observe an NMR line attributable to the H2, we are able to observe the conversion of the H2 molecules from the ortho state to the para state at 4.2 K. The process is bimolecular with a rate constant of 0.010 h-1. The existence of a large number of sites able to trap such a small molecule may provide an important insight into the defect structure of these films.

  7. Semiconductor Solar Superabsorbers

    PubMed Central

    Yu, Yiling; Huang, Lujun; Cao, Linyou

    2014-01-01

    Understanding the maximal enhancement of solar absorption in semiconductor materials by light trapping promises the development of affordable solar cells. However, the conventional Lambertian limit is only valid for idealized material systems with weak absorption, and cannot hold for the typical semiconductor materials used in solar cells due to the substantial absorption of these materials. Herein we theoretically demonstrate the maximal solar absorption enhancement for semiconductor materials and elucidate the general design principle for light trapping structures to approach the theoretical maximum. By following the principles, we design a practical light trapping structure that can enable an ultrathin layer of semiconductor materials, for instance, 10 nm thick a-Si, absorb > 90% sunlight above the bandgap. The design has active materials with one order of magnitude less volume than any of the existing solar light trapping designs in literature. This work points towards the development of ultimate solar light trapping techniques. PMID:24531211

  8. Computer-assisted infrared spectra interpretation for amorphous silicon alloys

    NASA Astrophysics Data System (ADS)

    Kavak, Hamide; Esen, Ramazan

    2005-12-01

    A computer program for the structural interpretation of the infrared (IR) spectra is developed and tested. The interpretation of the IR spectra is made by using an hybrid system which includes library search and rule-based interpretation methods together. The computer programs were written in Pascal Codes. The prototype IR library of silicon alloys includes amorphous silicon (a-Si), amorphous silicon dioxide (a-SiOx), amorphous silicon nitride (a-Si3N4) and amorphous silicon carbide (a-SiC) references. The known spectra of these compounds were fed into the system as an unknown samples. The performance of the developed program was evaluated on a test set of 157 spectra and the percentages of successful identification ranged between 78% and 99% for different alloys.

  9. Commercialization of multijunction a-Si modules

    NASA Astrophysics Data System (ADS)

    Carlson, D. E.; Arya, R. R.; Chen, L.-F.; Oswald, R.; Newton, J.; Rajan, K.; Romero, R.; Willing, F.; Yang, L.

    1997-02-01

    Solarex has just completed building a plant in James City County, Virginia that has the capacity to produce 10 MW per year of multijunction amorphous silicon PV modules. The plant will start commercial production of 8.6 ft2 tandem modules in early 1997. The tandem device structure consists of two stacked p-i-n junctions, a front junction containing amorphous silicon and a back junction containing an amorphous silicon germanium alloy. All amorphous silicon alloys are deposited using plasma-enhanced chemical vapor deposition, and the large-area monolithic modules are interconnected using computerized laser scribing coupled with a machine vision system. The principle products will be monolithic modules (26″×48″) with nominal stabilized power ratings of 56, 50 and 43 peak watts. All modules will be fabricated using a glass-EVA-glass encapsulation to ensure long-term reliability. These products are expected to be widely used in both remote and grid-tied applications.

  10. VANADIUM ALLOYS

    DOEpatents

    Smith, K.F.; Van Thyne, R.J.

    1959-05-12

    This patent deals with vanadium based ternary alloys useful as fuel element jackets. According to the invention the ternary vanadium alloys, prepared in an arc furnace, contain from 2.5 to 15% by weight titanium and from 0.5 to 10% by weight niobium. Characteristics of these alloys are good thermal conductivity, low neutron capture cross section, good corrosion resistance, good welding and fabricating properties, low expansion coefficient, and high strength.

  11. BRAZING ALLOYS

    DOEpatents

    Donnelly, R.G.; Gilliland, R.G.; Slaughter, G.M.

    1963-02-26

    A brazing alloy which, in the molten state, is characterized by excellent wettability and flowability, said alloy being capable of forming a corrosion resistant brazed joint wherein at least one component of said joint is graphite and the other component is a corrosion resistant refractory metal, said alloy consisting essentially of 20 to 50 per cent by weight of gold, 20 to 50 per cent by weight of nickel, and 15 to 45 per cent by weight of molybdenum. (AEC)

  12. Heat storage in alloy transformations

    NASA Technical Reports Server (NTRS)

    Birchenall, C. E.

    1980-01-01

    The feasibility of using metal alloys as thermal energy storage media was investigated. The elements selected as candidate media were limited to aluminum, copper, magnesium, silicon, zinc, calcium, and phosphorus on the basis of low cost and latent heat of transformation. Several new eutectic alloys and ternary intermetallic phases were determined. A new method employing X-ray absorption techniques was developed to determine the coefficients of thermal expansion of both the solid and liquid phases and the volume change during phase transformation. The method and apparatus are discussed and the experimental results are presented for aluminum and two aluminum-eutectic alloys. Candidate materials were evaluated to determine suitable materials for containment of the metal alloys. Graphite was used to contain the alloys during the volume change measurements. Silicon carbide was identified as a promising containment material and surface-coated iron alloys were also evaluated. System considerations that are pertinent if alloy eutectics are used as thermal energy storage media are discussed. Potential applications to solar receivers and industrial furnaces are illustrated schematically.

  13. Correlating the silicon surface passivation to the nanostructure of low-temperature a-Si:H after rapid thermal annealing

    NASA Astrophysics Data System (ADS)

    Macco, Bart; Melskens, Jimmy; Podraza, Nikolas J.; Arts, Karsten; Pugh, Christopher; Thomas, Owain; Kessels, Wilhelmus M. M.

    2017-07-01

    Using an inductively coupled plasma, hydrogenated amorphous silicon (a-Si:H) films have been prepared at very low temperatures (<50 °C) to provide crystalline silicon (c-Si) surface passivation. Despite the limited nanostructural quality of the a-Si:H bulk, a surprisingly high minority carrier lifetime of ˜4 ms is demonstrated after a rapid thermal annealing treatment. Besides the excellent level of surface passivation, the main advantage of the low-temperature approach is the facile suppression of undesired epitaxial growth. The correlation between the a-Si:H nanostructure and the activation of a-Si:H/c-Si interface passivation, upon annealing, has been studied in detail. This yields a structural model that qualitatively describes the different processes that take place in the a-Si:H films during annealing. The presented experimental findings and insights can prove to be useful in the further development of very thin a-Si:H passivation layers for use in silicon heterojunction solar cells.

  14. Study of hydrogen states in a-Si:H films, dehydrogenization treatments and influence of hydrogen on nanosecond pulse laser crystallization of a-Si:H

    NASA Astrophysics Data System (ADS)

    Volodin, V. A.; Galkov, M. S.; Safronova, N. A.; Kamaev, G. N.; Antonenko, A. H.; Kochubey, S. A.

    2014-12-01

    Structures based on hydrogenated amorphous silicon (a-Si:H) films deposited on various substrates (including not refractory ones) are widely applied in giant microelectronics devices, such as flat panel displays based on active matrix thin-film transistors and solar cells. The a-Si:H films produced by plasma enhanced chemical vapor deposition (PECVD) methods, contain up to 40% atoms of hydrogen. The influence of hydrogen on the optical and electrical properties of the films and their degradation is important. Therefore, the development of express and non-destructive methods for control of the hydrogen concentration in thin films continues to be an actual task to date. Previously, from a comparative analysis of infrared (IR) spectroscopy and Raman scattering spectroscopy, the ratios of the integral intensities of Raman peaks due to scattering by vibrations of the Si-H and Si-H2 bonds to the intensity of Raman peak of the Si-Si bonds were experimentally determined. Knowing these ratios, it is possible to measure the hydrogen concentration, moreover, separately in Si-H and Si-H2 states. Proposed quantitative method for determining of the hydrogen concentration from analysis of the Raman spectra is an express, non-destructive method and can be used for "in situ" monitoring of the hydrogen. The aim of this work was to determine the polarization dependence of Raman scattering by stretching vibrations of Si-H bonds and find the form of the corresponding Raman tensors. From analysis of Raman intensities in different polarizations the Raman tensors for Si-H and Si-H2 bonds were determined. The regimes for dehydrogenization of thick (up to 1 micron) a-Si:H films were found. The nanosecond pulse XeCl laser with wavelength of 308 nm and pulse duration of 10 ns was used for pulse crystallization of as-deposited and dehydrogenated films. As it was studied earlier, for a-Si:H films with high hydrogen concentration, the threshold for crystallization is very close to threshold of

  15. Design considerations and performance of Maspeth a-Si PV system

    NASA Astrophysics Data System (ADS)

    Stafford, Byron

    1994-06-01

    This paper describes the design and early performance of a 17-kWp(ac) amorphous silicon (a-Si) photovoltaic (PV) system in Maspeth, New York. The system started operating in June, 1993. The system is mounted on the roof of a warehouse operated by the New York City Transit Authority. The system was designed and installed by Integrated Power Corporation using a unique ballast-weighted system configuration with no roof penetrations. Same-band-gap tandem a-Si modules from United Solar Systems Corporation are used. The PV modules face south and slope 10 degrees from horizontal. This paper estimates the monthly system performance and reports the system's performance during the first three months of operation.

  16. PILOT EVALUATION OF VANADIUM ALLOYS.

    DTIC Science & Technology

    ARCS, SHEETS, ROLLING(METALLURGY), HIGH TEMPERATURE, SCIENTIFIC RESEARCH, COMPRESSIVE PROPERTIES, DUCTILITY, CREEP, OXIDATION, COATINGS , SILICIDES , HARDNESS, WELDING, EXTRUSION, TANTALUM ALLOYS, MOLYBDENUM ALLOYS....VANADIUM ALLOYS, * NIOBIUM ALLOYS, MECHANICAL PROPERTIES, MECHANICAL PROPERTIES, TITANIUM ALLOYS, ZIRCONIUM ALLOYS, CARBON ALLOYS, MELTING, ELECTRIC

  17. Nonswelling alloy

    DOEpatents

    Harkness, S.D.

    1975-12-23

    An aluminum alloy containing one weight percent copper has been found to be resistant to void formation and thus is useful in all nuclear applications which currently use aluminum or other aluminum alloys in reactor positions which are subjected to high neutron doses.

  18. URANIUM ALLOYS

    DOEpatents

    Seybolt, A.U.

    1958-04-15

    Uranium alloys containing from 0.1 to 10% by weight, but preferably at least 5%, of either zirconium, niobium, or molybdenum exhibit highly desirable nuclear and structural properties which may be improved by heating the alloy to about 900 d C for an extended period of time and then rapidly quenching it.

  19. ZIRCONIUM ALLOY

    DOEpatents

    Wilhelm, H.A.; Ames, D.P.

    1959-02-01

    A binary zirconiuin--antimony alloy is presented which is corrosion resistant and hard containing from 0.07% to 1.6% by weight of Sb. The alloys have good corrosion resistance and are useful in building equipment for the chemical industry.

  20. Kinetics of a-Si:H bulk defect and a-Si:H/c-Si interface-state reduction

    NASA Astrophysics Data System (ADS)

    de Wolf, Stefaan; Ballif, Christophe; Kondo, Michio

    2012-03-01

    Low-temperature annealing of hydrogenated amorphous silicon (a-Si:H) is investigated. An identical energy barrier is found for the reduction of deep defects in the bulk of a-Si:H films and at the interface such layers form with crystalline Si (c-Si) surfaces. This finding gives direct physical evidence that the defects determining a-Si:H/c-Si interface recombination are silicon dangling bonds and that also kinetically this interface has no unique features compared to the a-Si:H bulk.

  1. Defects in a-Si and a-Si:H: A numerical study

    NASA Astrophysics Data System (ADS)

    Knief, Simone; von Niessen, Wolfgang; Koslowski, Thorsten

    1998-08-01

    We present a numerical study of the electronic properties of various structural models of amorphous silicon and hydrogenated amorphous silicon. Starting from an ideal random network, dangling bonds, floating bonds, double bonds, microvoids, hydrogenated dangling bonds, and hydrogenated floating bonds are introduced. The concentrations of these defects can be varied independently, the amount of disorder introduced to the system is therefore strictly controllable. Two continuous random networks, the vacancy model of Duffy, Boudreaux, and Polk and the bond switching model of Wooten, Winer, and Weaire (WWW model) are investigated. For the relaxation of the structures the potentials of Keating and of Stillinger and Weber are employed. The electronic structure is described by a tight-binding Hamiltonian; the localized or extended character of the eigenstates is investigated via a scaling approach. The vacancy model shows a band gap for small defect concentrations but this fills up with increasing disorder. Similar behavior is found for the case of the other models. In general defects introduce states into the gap region of a-Si, where the dangling bonds lead to the largest density of states in the gap region for a given defect concentration. This model turns out to be unique. For small system sizes an impurity band results that dramatically changes its character for large systems above 4000 atoms to a nearly uniform density of states as observed experimentally. In a-Si:H the dangling and floating bonds are removed and a mobility gap results with a width in good agreement with experiment. The experimentally observed tailing of the band into the gap region (first linear, then exponential) is well described only for the a-Si:H model derived from the vacancy model and for very large system sizes above 4000 atoms. The WWW model does not lead to this tail behavior. Localized states are found at all band edges but states at the bottom of the conduction band are more strongly

  2. High-efficiency silicon heterojunction solar cells: Status and perspectives

    SciTech Connect

    De Wolf, S.; Geissbuehler, J.; Loper, P.; Martin de Nicholas, S.; Seif, J.; Tomasi, A.; Ballif, C.

    2015-05-11

    Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups are reporting devices with conversion efficiencies well over 20 % on both-sides contacted n-type cells, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short-wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long- wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metallization grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical

  3. High-efficiency silicon heterojunction solar cells: Status and perspectives

    SciTech Connect

    De Wolf, S.

    2015-04-27

    Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups are reporting devices with conversion efficiencies well over 20 % on n-type wafers, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short- wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long-wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metalisation grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical transport requirements. The

  4. Aluminum alloy

    NASA Technical Reports Server (NTRS)

    Blackburn, Linda B. (Inventor); Starke, Edgar A., Jr. (Inventor)

    1989-01-01

    This invention relates to aluminum alloys, particularly to aluminum-copper-lithium alloys containing at least about 0.1 percent by weight of indium as an essential component, which are suitable for applications in aircraft and aerospace vehicles. At least about 0.1 percent by weight of indium is added as an essential component to an alloy which precipitates a T1 phase (Al2CuLi). This addition enhances the nucleation of the precipitate T1 phase, producing a microstructure which provides excellent strength as indicated by Rockwell hardness values and confirmed by standard tensile tests.

  5. Aluminum alloy

    NASA Technical Reports Server (NTRS)

    Blackburn, Linda B. (Inventor); Starke, Edgar A., Jr. (Inventor)

    1989-01-01

    This invention relates to aluminum alloys, particularly to aluminum-copper-lithium alloys containing at least about 0.1 percent by weight of indium as an essential component, which are suitable for applications in aircraft and aerospace vehicles. At least about 0.1 percent by weight of indium is added as an essential component to an alloy which precipitates a T1 phase (Al2CuLi). This addition enhances the nucleation of the precipitate T1 phase, producing a microstructure which provides excellent strength as indicated by Rockwell hardness values and confirmed by standard tensile tests.

  6. PLUTONIUM ALLOYS

    DOEpatents

    Chynoweth, W.

    1959-06-16

    The preparation of low-melting-point plutonium alloys is described. In a MgO crucible Pu is placed on top of the lighter alloying metal (Fe, Co, or Ni) and the temperature raised to 1000 or 1200 deg C. Upon cooling, the alloy slug is broke out of the crucible. With 14 at. % Ni the m.p. is 465 deg C; with 9.5 at. % Fe the m.p. is 410 deg C; and with 12.0 at. % Co the m.p. is 405 deg C. (T.R.H.) l6262 l6263 ((((((((Abstract unscannable))))))))

  7. Processing and modeling issues for thin-film solar cell devices. Annual subcontract report, January 16, 1994--January 15, 1995

    SciTech Connect

    Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Hegedus, S.S.; McCandless, B.E.; Shafarman, W.N.

    1995-06-01

    This report describes results achieved during the second phase of a four year subcontract to develop and understand thin film solar cell technology related to a-Si and its alloys, CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2}, and CdTe. Accomplishments during this phase include, development of equations and reaction rates for the formation of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} films by selenization, fabrication of a 15% efficient CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} cell, development of a reproducible, reliable Cu-diffused contact to CdTe, investigation of the role of CdTe-CdS interdiffusion on device operation, investigation of the substitution of HCl for CdCl{sub 2} in the post-deposition heat treatment of CdTe/CdS, demonstration of an improved reactor design for deposition of a-Si films, demonstration of improved process control in the fabrication of a ten set series of runs producing {approximately}8% efficient a-Si devices, demonstration of the utility of a simplified optical model for determining quantity and effect of current generation in each layer of a triple stacked a-Si cell, presentation of analytical and modeling procedures adapted to devices produced with each material system, presentation of baseline parameters for devices produced with each material system, and various investigations of the roles played by other layers in thin film devices including the Mo underlayer, CdS and ZnO in CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} devices, the CdS in CdTe devices, and the ZnO as window layer and as part of the back surface reflector in a-Si devices. In addition, collaborations with over ten research groups are briefly described. 73 refs., 54 figs., 34 tabs.

  8. Development And Evaluation Of A SiC Schottky Diode For Harsh Environment Space Applications

    NASA Astrophysics Data System (ADS)

    Massetti, S.; Godignon, P.; Ciancetta, E.; Lopez, D.; Meurer, R.; Baur, C.; Jorda, X.

    2011-10-01

    This paper reports on the development and evaluation of a 300V-5A SiC Schottky diode with a wide temperature operation range capability (-170oC to 270oC), to be used as blocking diode for solar array cells strings. This work has been conducted in the frame of Bepicolombo technology development activities. In particular, the solar array design was considered the baseline for deriving the applicable electrical, reliability and environmental requirements. To extend the diodes' state of the art to this extended temperature range, different technological approaches have been considered, with mainly modifications in metallization layers and package processes. The diodes have been then submitted to ad-hoc evaluation program that was derived from ESCC 2265000 demonstrating high stability for a continuous operation at 270oC. This technological development was conducted by CNM under Thales Alenia Space - Turin contract.

  9. Characterization of the visible photoluminescence from porous a-Si:H and porous a-Si:C:H thin films

    SciTech Connect

    Estes, M.J.; Hirsch, L.R.; Wichart, S.; Moddel, G.

    1996-12-31

    The authors report on the influence of doping, temperature, porosity, and bandgap on the visible photoluminescence properties of anodically-etched porous a-Si:H and a-Si:C:H thin films. Only boron-doped, p-type a-Si:H or a-Si:C:H samples exhibited any visible photoluminescence. The authors see evidence of discrete defect or impurity levels in temperature-dependent luminescence measurements. Unlike in porous crystalline silicon, they see no correlation of luminescence energy with porosity. The authors do, though, observe a correlation of luminescence energy with bandgap of the starting a-Si:C:H films. They discuss the implication of these observations on the nature of the luminescence mechanism.

  10. Investigation of the vertical electrical transport in a-Si:H/nc-Si:H superlattice thin films.

    PubMed

    Das, Debajyoti; Kar, Debjit

    2015-07-14

    Tuning the size of silicon nano-crystallites (Si-ncs) has been realized simply by controlling the thickness of the nc-Si:H sub-layer (tnc) in the a-Si:H/nc-Si:H superlattice thin films grown by low temperature plasma processing in PE-CVD. The vertical electrical transport phenomena accomplished in superlattice films have been investigated in order to identify their effective utilization in practical device configuration. The reduced size of the Si-ncs at thinner tnc and the associated band gap widening due to quantum confinement effects generates the Coulomb potential barrier at the a-Si/nc-Si interface which in turn obstructs the transport of charge carriers to the allowed energy states in Si-ncs, leading to the Poole-Frenkel tunneling as the prevailing charge transport mechanism in force. The advantages of the conduction process governed by the Poole-Frenkel mechanism are two-fold. The lower barrier height caused by the a-Si:H sub-layer in the superlattice than the silicon oxide sub-layer in conventional structures enhances the conduction current. Moreover, increasing trapped charges in the a-Si:H sub-layer can arbitrarily increase the current conduction. Accordingly, a-Si:H/nc-Si:H superlattice structures could provide superior electrical transport in stacked layer devices e.g., multi-junction all silicon solar cells.

  11. COATED ALLOYS

    DOEpatents

    Harman, C.G.; O'Bannon, L.S.

    1958-07-15

    A coating is described for iron group metals and alloys, that is particularly suitable for use with nickel containing alloys. The coating is glassy in nature and consists of a mixture containing an alkali metal oxide, strontium oxide, and silicon oxide. When the glass coated nickel base metal is"fired'' at less than the melting point of the coating, it appears the nlckel diffuses into the vitreous coating, thus providing a closely adherent and protective cladding.

  12. BRAZING ALLOYS

    DOEpatents

    Donnelly, R.G.; Gilliland, R.G.; Slaughter, G.M.

    1962-02-20

    A brazing alloy is described which, in the molten state, is characterized by excellent wettability and flowability and is capable of forming a corrosion-resistant brazed joint. At least one component of said joint is graphite and the other component is a corrosion-resistant refractory metal. The brazing alloy consists essentially of 40 to 90 wt % of gold, 5 to 35 wt% of nickel, and 1 to 45 wt% of tantalum. (AEC)

  13. Heat storage in alloy transformations

    NASA Technical Reports Server (NTRS)

    Birchenall, C. E.

    1980-01-01

    Heats of transformation of eutectic alloys were measured for many binary and ternary systems by differential scanning calorimetry and thermal analysis. Only the relatively cheap and plentiful elements Mg, Al, Si, P, Ca, Cu, Zn were considered. A method for measuring volume change during transformation was developed using x-ray absorption in a confined sample. Thermal expansion coefficients of both solid and liquid states of aluminum and of its eutectics with copper and with silicon also were determined. Preliminary evaluation of containment materials lead to the selection of silicon carbide as the initial material for study. Possible applications of alloy PCMs for heat storage in conventional and solar central power stations, small solar receivers and industrial furnace operations are under consideration.

  14. High-Temperature Alloys for Automotive Stirling Engines

    NASA Technical Reports Server (NTRS)

    Stephens, J. R.; Titran, R. H.

    1986-01-01

    Stirling engine is external-combustion engine that offers fuel economy, low emissions, low noise, and low vibrations. One of most critical areas in engine development concerns material selection for component parts. Alloys CG-27 and XF-818 identified capable of withstanding rigorous requirements of automotive Stirling engine. Alloys chosen for availability, performance, and manufacturability. Advanced iron-base alloys have potential for variety of applications, including stationary solar-power systems.

  15. Blueshift of the optical band gap: Implications for the quantum confinement effect in a-Si:H/a-SiNx:H multilayers

    NASA Astrophysics Data System (ADS)

    Beaudoin, M.; Meunier, M.; Arsenault, C. J.

    1993-01-01

    Optical-absorption measurements are presented for multilayer structures of hydrogenated amorphous silicon and hydrogenated amorphous silicon nitride (a-Si:H/a-SiNx:H) produced by glow discharge. Small-angle x-ray-scattering measurements show that these multilayers are very periodic and confirm that the interfaces are abrupt. Optical band-gap measurements are presented for two sets of samples. Samples for the first set have constant barrier thickness and a fixed number of layer repeats while for the second set the composition and total thickness are kept constant. Even for very thin well layer thicknesses, no blueshift in the optical band gap is observed for the second set whereas the first set displays this effect quite well. This can be explained if the blueshift in the second set is due to an artifact of the Tauc law rather than quantum confinement effects as suggested by Collins and Huang [Phys. Rev. B 34, 2910 (1986)]. This interpretation is further supported by a Cody law [Solar Energy Mater. 8, 231 (1982)] analysis for which no blueshift in the optical band gap is observed for either set of samples. We conclude that optical band-gap measurements cannot be used as proof for the quantum confinement of carriers in these structures.

  16. Valence band offset in heterojunctions between crystalline silicon and amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0 < x < 2)

    SciTech Connect

    Liebhaber, M.; Mews, M.; Schulze, T. F.; Korte, L. Rech, B.; Lips, K.

    2015-01-19

    The heterojunction between amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0 < x < 2) and crystalline silicon (c-Si) is investigated. We combine chemical vapor deposition with in-system photoelectron spectroscopy in order to determine the valence band offset ΔE{sub V} and the interface defect density, being technologically important junction parameters. ΔE{sub V} increases from ≈0.3 eV for the a-Si:H/c-Si interface to >4 eV for the a-SiO{sub 2}/c-Si interface, while the electronic quality of the heterointerface deteriorates. High-bandgap a-SiO{sub x}:H is therefore unsuitable for the hole contact in heterojunction solar cells, due to electronic transport hindrance resulting from the large ΔE{sub V}. Our method is readily applicable to other heterojunctions.

  17. Absorption in a-Si/SiO2 Superlattices

    NASA Astrophysics Data System (ADS)

    Kilpelä, O.; Karppinen, M.; Novikov, S.; Sokolov, V.; Yliniemi, S.

    a-Si/SiO2 superlattices were grown on quartz by MBD (Molecular Beam Deposition) using in situ oxidation by an RF-plasma source. The a-Si layer thicknesses were varied from 0.5-2.5nm while the SiO2 layer thicknesses (1.0nm) were kept constant. Optical transmission and reflection measurements were performed on these samples at room temperature. The recorded spectra were then analyzed with a commercial optical thin film analysis program. The band gaps were derived from constant-n and non-constant-n forms of Tauc and Cody laws. The observed blueshift of the band gap, with decreasing a-Si layer thickness, is attributed to quantum confinement in the a-Si sublayers.

  18. Electron cyclotron resonance microwave plasma deposition of a-Si:H and a-SiC:H films

    NASA Technical Reports Server (NTRS)

    Shing, Y. H.; Pool, F. S.

    1991-01-01

    The paper reports electron cyclotron resonance (ECR) deposition of a-Si:H and a-SiC:H thin films using SiH4, CH4, and hydrogen mixed gas plasmas. The ECR deposition conditions were investigated in the pressure region of 0.1 to 100 mtorr, and the film properties were characterized by light and dark conductivity measurements, XRD, Raman spectroscopy, optical transmission, and IR spectroscopy. In addition, the hydrogen dilution effect on ECR-deposited a-SiC:H was investigated.

  19. Elevated temperature aluminum alloys

    NASA Technical Reports Server (NTRS)

    Meschter, Peter (Inventor); Lederich, Richard J. (Inventor); O'Neal, James E. (Inventor)

    1989-01-01

    Three aluminum-lithium alloys are provided for high performance aircraft structures and engines. All three alloys contain 3 wt % copper, 2 wt % lithium, 1 wt % magnesium, and 0.2 wt % zirconium. Alloy 1 has no further alloying elements. Alloy 2 has the addition of 1 wt % iron and 1 wt % nickel. Alloy 3 has the addition of 1.6 wt % chromium to the shared alloy composition of the three alloys. The balance of the three alloys, except for incidentql impurities, is aluminum. These alloys have low densities and improved strengths at temperatures up to 260.degree. C. for long periods of time.

  20. Applications of a-Si:H radiation detectors

    SciTech Connect

    Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Qureshi, S.; Street, R.A.

    1989-07-01

    Device structures and operation principles are described for detecting various kinds of radiation with hydrogenated amorphous silicon (a-Si:H) layers. With some new configurations such as the buried p-i-n structure and the use of interdigitated electrodes, the a-Si:H radiation detectors will find their applications in many fields of science. Some applications in high energy physics, medical imaging, materials sciences and life sciences are discussed in this paper. 41 refs., 7 figs., 1 tab.

  1. Superlattice Intermediate Band Solar Cell on Gallium Arsenide

    DTIC Science & Technology

    2015-02-09

    band solar cell incorporating low dimensional structures made with dilute nitrogen alloys of III-V semiconductors is investigated theoretically and...strong two photon absorption/IBSC behavior has been reported for highly electronically mismatched bulk alloys [5,6] like in dilute nitrogen alloys of...GaAs (GaAsN). In such alloys the interaction between the highly localized impurity-like states of nitrogen with that of the conduction band of the

  2. Solar collection

    NASA Astrophysics Data System (ADS)

    Cole, S. I.

    1984-08-01

    Solar dishes, photovoltaics, passive solar building and solar hot water systems, Trombe walls, hot air panels, hybrid solar heating systems, solar grain dryers, solar greenhouses, solar hot water worhshops, and solar workshops are discussed. These solar technologies are applied to residential situations.

  3. Material properties and device evaluations of ECR-deposited a-Si:H and a-SiC:H films

    NASA Technical Reports Server (NTRS)

    Shing, Y. H.; Pool, F. S.; Essick, J. M.

    1991-01-01

    Device-quality a-Si:H and a-SiC:H films have been deposited using electron cyclotron resonance (ECR) microwave plasmas of SiH4, CH4, and H2 mixtures. Typical material properties of ECR-deposited, photosensitive a-Si:H films are: (1) high photosensitivity up to 2 x 106 with a photoconductivity of 10 exp -5 to 10 exp -4/(Ohm-cm), (2) a Tauc gap of 1.75 to 1.85 eV, (3) an Urbach slope of 50-60 meV determined by the constant photocurrent method, and (4) an integrated defect density of 1-2 x 10 exp 16/cu cm determined by junction capacitance measurements. Highly conductive, p-type a-SiC:H films have been produced by ECR plasmas with a conductivity of 0.2/(Ohm-cm).

  4. Material properties and device evaluations of ECR-deposited a-Si:H and a-SiC:H films

    NASA Technical Reports Server (NTRS)

    Shing, Y. H.; Pool, F. S.; Essick, J. M.

    1991-01-01

    Device-quality a-Si:H and a-SiC:H films have been deposited using electron cyclotron resonance (ECR) microwave plasmas of SiH4, CH4, and H2 mixtures. Typical material properties of ECR-deposited, photosensitive a-Si:H films are: (1) high photosensitivity up to 2 x 106 with a photoconductivity of 10 exp -5 to 10 exp -4/(Ohm-cm), (2) a Tauc gap of 1.75 to 1.85 eV, (3) an Urbach slope of 50-60 meV determined by the constant photocurrent method, and (4) an integrated defect density of 1-2 x 10 exp 16/cu cm determined by junction capacitance measurements. Highly conductive, p-type a-SiC:H films have been produced by ECR plasmas with a conductivity of 0.2/(Ohm-cm).

  5. Orthodontic silver brazing alloys.

    PubMed

    Brockhurst, P J; Pham, H L

    1989-10-01

    Orthodontic silver brazing alloys suffer from the presence of cadmium, excessive flow temperatures, and crevice corrosion on stainless steel. Seven alloys were examined. Two alloys contained cadmium. The lowest flow temperature observed was 629 degrees C for a cadmium alloy and 651 degrees C for two cadmium free alloys. Three alloys had corrosion resistance superior to the other solders. Addition of low melting temperature elements gallium and indium reduced flow temperature in some cases but produced brittleness in the brazing alloy.

  6. Comparison of crystallization kinetics in a-Si/Cu and a-Si/Al bilayer recording films under thermal annealing and pulsed laser irradiation

    NASA Astrophysics Data System (ADS)

    Her, Yung-Chiun; Chen, Chih-Wei; Wu, Chun-Lin

    2006-06-01

    Under thermal annealing, the crystallization temperatures of a-Si in a-Si/Cu and a-Si/Al bilayer recording films were significantly reduced to around 485 and 357 °C, respectively, and the activation energies for crystallization were reduced to about 3.3 eV. The formation of Cu3Si phase prior to crystallization of a-Si was found to occur at around 175 °C in a-Si/Cu, while no Al silicide was observed in a-Si/Al before crystallization of a-Si. The reaction exponents for a-Si/Cu and a-Si/Al were determined to be around 1.8 and 1.6, respectively, corresponding to a crystallization process in which grain growth occurs with nucleation, and the nucleation rate decreases with the progress of grain growth. Under pulsed laser irradiation, the precipitation of Cu3Si phases and crystallization of a-Si were observed in a-Si/Cu, while the crystallization and reamorphization of a-Si took place sequentially in a-Si/Al. The reaction exponents for a-Si/Cu and a-Si/Al, determined to be about 2.0 and 2.2, respectively, are slightly higher than those under thermal annealing, indicating that the crystallization processes of a-Si/Cu and a-Si/Al under pulsed laser irradiation are similar to those under thermal annealing. However, the decrease of nucleation rate with the progress of grain growth is slower. At the same time, the activation energies for crystallization of a-Si/Cu and a-Si/Al, estimated to be about 0.18 and 0.22 eV, respectively, are nearly an order of magnitude lower than those under thermal annealing. This may be explained by the explosive crystallization of a-Si by mechanical impact, with a high power pulsed laser.

  7. Modeling of Silicon Heterojunction Solar Cells

    SciTech Connect

    Luppina, P.; Lugli, P.; Goodnick, S.

    2015-06-14

    Here we present modeling results on crystalline Si/amorphous Si (a-Si) heterojunction solar cells using Sentaurus including various models for defect states in the a-Si barriers, as well as explicit models for the ITO emitter contact. We investigate the impact of the band offsets and barrier heights of the a-Si/c-Si interface, particularly in terms of the open circuit voltage. It is also shown that the solar cell performance is sensitively dependent on the quality of the a-Si in terms of defect states and their distribution, particularly on the emitter side. Finally, we have investigate the role of tunneling and thermionic emission across the heterointerface in terms of transport from the Si to the ITO contact layer

  8. a-Si:F and a-Si:F:H prepared by ion-beam-assisted reactive deposition

    NASA Astrophysics Data System (ADS)

    Zhang, S.; Brodie, D. E.

    1992-08-01

    a-Si:F and a-Si:F:H films have been prepared by ion-beam-assisted deposition using SiF4, SiH4+Ar, or SiF4+SiH4 as the gases for the ion source. Fluorine in a-Si eliminates some dangling bonds, increases the optical gap, and decreases the dark conductivity. The results are influenced mainly by the ion-beam energy used. The a-Si:F films do not exhibit an activated conductivity even up to 150 °C, and no photoconductivity could be detected. However, film properties were significantly improved when a very small amount of H was added to the a-Si:F and much less than 1 at. % H produced films that were photoconducting and had activated conductivities. The properties of these a-Si:F:H are strongly dependent on both the fluorine concentration CF and the hydrogen concentration CH. The deposition rate decreases with increasing SiF4 content in the source gas, and neither CF nor CH vary linearly with the change in the source gas ratio SiH4/(SiF4+SiH4). Hence, CH must be known and controlled in order to evaluate the effect of fluorine on the film's properties. By studying a series of a-Si:F:H samples containing the same CH, it is noted that incorporating some F does improve the film's electrical properties. Annealing experiments suggest that an observed peak at 2100 cm-1 in the IR spectra of these a-Si:F:H films is not completely due to SiH2, as has been suggested by others.

  9. Cost-effective counter electrode electrocatalysts from iron@palladium and iron@platinum alloy nanospheres for dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Tang, Qunwei; Liu, Juan; Zhang, Huihui; He, Benlin; Yu, Liangmin

    2015-11-01

    Pursuit of cost-effective counter electrode (CE) electrocatalysts with no sacrifice of photovoltaic performances has been a persistent objective for dye-sensitized solar cells (DSSCs). Here we demonstrate the galvanic replacement realization of cost-effective CEs from Fe@M (M = Pd, Pt) nanospheres for DSSCs. Due to the enhanced catalytic activity originated from compressive strain and extended surface in tuning the electronic structure of Pd (or Pt) shell along with competitive dissolution reaction of Fe with electrolyte, the cells with high durability display efficiencies of 8.74% and 7.22%. The impressive results along with simple synthesis highlight the potential application of Fe@M nanospheres in robust DSSCs.

  10. Optimization of processing and modeling issues for thin film solar cell devices: Final report, February 3, 1997--September 1, 1998

    SciTech Connect

    Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Hegedus, S. S.; McCandless, B. E.

    2000-02-28

    This final report describes results achieved under a 20-month NREL subcontract to develop and understand thin-film solar cell technology associated to CuInSe{sub 2} and related alloys, a-Si and its alloys, and CdTe. Modules based on all these thin films are promising candidates to meet DOE's long-range efficiency, reliability and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for the development of viable commercial processes and to improve module performance. The generic research issues addressed are: (1) quantitative analysis of processing steps to provide information for efficient commercial-scale equipment design and operation; (2) device characterization relating the device performance to materials properties and process conditions; (3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; (4) development and improved window/heterojunction layers and contacts to improve device performance and reliability; and (5) evaluation of cell stability with respect to device structure and module encapsulation.

  11. Tin induced a-Si crystallization in thin films of Si-Sn alloys

    SciTech Connect

    Neimash, V. E-mail: oleks.goushcha@nuportsoft.com; Poroshin, V.; Goushcha, A. O. E-mail: oleks.goushcha@nuportsoft.com; Shepeliavyi, P.; Yukhymchuk, V.; Melnyk, V.; Kuzmich, A.; Makara, V.

    2013-12-07

    Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (2–4 nm in size) in the amorphous matrix of Si{sub 1−x}Sn{sub x}, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300 °C. The aggregate volume of nanocrystals in the deposited film of Si{sub 1−x}Sn{sub x} exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ∼80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer.

  12. Hollow platinum alloy tailored counter electrodes for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Li, Pinjiang; Zhang, Yange; Fa, Wenjun; Yang, Xiaogang; Wang, Liang

    2017-08-01

    Without sacrifice of photovoltaic performances, low-platinum alloy counter electrodes (CEs) are promising in bringing down the fabrication cost of dye-sensitized solar cells (DSSCs). We present here the realization of ZnO nanostructure assisted hollow platinum-nickel (PtNi) alloy microstructure CEs with a simple hydrothermal methods and maximization of electrocatalytic behaviors by tuning Zn precursors. The maximal power conversion efficiency is up to 8.74% for the liquid-junction dye-sensitized solar cells with alloyed PtNi0.41 electrode, yielding a 37.6% cell efficiency enhancement in comparison with pristine solar cell from planar Pt electrode. Moreover, the dissolution-resistant and charge-transfer abilities toward I-/I3- redox electrolyte have also been markedly enhanced due to competitive dissolution reactions and alloying effects.

  13. Solar astronomy

    NASA Technical Reports Server (NTRS)

    Rosner, Robert; Noyes, Robert; Antiochos, Spiro K.; Canfield, Richard C.; Chupp, Edward L.; Deming, Drake; Doschek, George A.; Dulk, George A.; Foukal, Peter V.; Gilliland, Ronald L.

    1991-01-01

    An overview is given of modern solar physics. Topics covered include the solar interior, the solar surface, the solar atmosphere, the Large Earth-based Solar Telescope (LEST), the Orbiting Solar Laboratory, the High Energy Solar Physics mission, the Space Exploration Initiative, solar-terrestrial physics, and adaptive optics. Policy and related programmatic recommendations are given for university research and education, facilitating solar research, and integrated support for solar research.

  14. First-principles simulations of vibrational decay and lifetimes in a -Si:H and a -Si:D

    NASA Astrophysics Data System (ADS)

    Atta-Fynn, Raymond; Drabold, David A.; Elliott, Stephen R.; Biswas, Parthapratim

    2017-03-01

    Phonon lifetime in materials is an important observable that conveys basic information about structure, dynamics, and anharmonicity. Recent vibrational transient-grating measurements, using picosecond infrared pulses from free-electron lasers, have demonstrated that the vibrational-population decay rates of localized high-frequency stretching modes (HSMs) in hydrogenated and deuterated amorphous silicon (a -Si:H/D) increase with temperature and the vibrational energy redistributes among the bending modes of Si in a -Si:H/D. Motivated by this observation, we address the problem from first-principles density-functional calculations and study the time evolution of the vibrational-population decay in a -Si:H/D, the average decay times, and the possible decay channels for the redistribution of vibrational energy. The average lifetimes of the localized HSMs in a -Si:H and a -Si:D are found to be approximately 51-92 ps and 50-78 ps, respectively, in the temperature range of 25-200 K, which are consistent with experimental data. A weak temperature dependence of the vibrational-population decay rates has been observed via a slight increase of the decay rates with temperature, which can be attributed to stimulated emission and increased anharmonic coupling between the normal modes at high temperature.

  15. Absorptive coating for aluminum solar panels

    NASA Technical Reports Server (NTRS)

    Desmet, D.; Jason, A.; Parr, A.

    1979-01-01

    Method for coating forming coating of copper oxide from copper component of sheet aluminum/copper alloy provides strong durable solar heat collector panels. Copper oxide coating has solar absorption characteristics similar to black chrome and is much simpler and less costly to produce.

  16. Absorptive coating for aluminum solar panels

    NASA Technical Reports Server (NTRS)

    Desmet, D.; Jason, A.; Parr, A.

    1979-01-01

    Method for coating forming coating of copper oxide from copper component of sheet aluminum/copper alloy provides strong durable solar heat collector panels. Copper oxide coating has solar absorption characteristics similar to black chrome and is much simpler and less costly to produce.

  17. Alloy softening in binary molybdenum alloys

    NASA Technical Reports Server (NTRS)

    Stephens, J. R.; Witzke, W. R.

    1972-01-01

    An investigation was conducted to determine the effects of alloy additions of Hf, Ta, W, Re, Os, Ir, and Pt on the hardness of Mo. Special emphasis was placed on alloy softening in these binary Mo alloys. Results showed that alloy softening was produced by those elements having an excess of s+d electrons compared to Mo, while those elements having an equal number or fewer s+d electrons than Mo failed to produce alloy softening. Alloy softening and hardening can be correlated with the difference in number of s+d electrons of the solute element and Mo.

  18. Alloys formation upon hypervelocity impacts

    NASA Astrophysics Data System (ADS)

    Mandeville, J. C.; Perrin, J. M.; Vidal, L.; Vidal, A.

    Satellite materials exposed to the space environment are indeed valuable detectors for cosmic and man-made solid particles Many investigations have been made to deduce the geometric size shape and dynamic incidence angle parameters of these projectiles from the morphology of the impact features Furthermore the chemical analysis of remnants when they are found inside craters can provide valuable information about the nature and the origin of these particles However interpretation difficulties have made necessary laboratory hypervelocity impact tests A number of impacts with well defined angles of incidence and velocities using calibrated projectiles have been performed on various targets Alloys obviously formed from projectile and targets components are found We have studied the links between the morphologies the physical and chemical properties of these alloys and those of the incident particles and the targets When projectiles and targets are made of pure materials such as in laboratory tests we have found a clear connection between the composition of the alloys and the kinetic energy of the projectiles Explanations using phase diagrams are given An extrapolation to complex materials such as those used in solar arrays is presented Further modelling of the alloys formation upon hypervelocity impacts is proposed

  19. Solar Cell Modules With Improved Backskin

    DOEpatents

    Gonsiorawski, Ronald C.

    2003-12-09

    A laminated solar cell module comprises a front light transmitting support, a plurality of interconnected solar cells encapsulated by a light-transmitting encapsulant material, and an improved backskin formed of an ionomer/nylon alloy. The improved backskin has a toughness and melting point temperature sufficiently great to avoid any likelihood of it being pierced by any of the components that interconnect the solar cells.

  20. High-Efficiency Amorphous Silicon and Nanocrystalline Silicon-Based Solar Cells and Modules: Final Technical Progress Report, 30 January 2006 - 29 January 2008

    SciTech Connect

    Guha, S.; Yang, J.

    2008-05-01

    United Solar Ovonic successfully used its spectrum-splitting a-Si:H/a-SiGe:H/a-SiGe:H triple-junction structure in their manufacturing plants, achieving a manufacturing capacity of 118 MW in 2007, and set up a very aggressive expansion plan to achieve grid parity.

  1. Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique

    DOEpatents

    Wang, Qi; Iwaniczko, Eugene

    2006-10-17

    A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.

  2. Thin film solar energy collector

    DOEpatents

    Aykan, Kamran; Farrauto, Robert J.; Jefferson, Clinton F.; Lanam, Richard D.

    1983-11-22

    A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

  3. Investigation of electrical, structural, and optical properties of very thin oxide/a-Si:H/c-Si interfaces passivated by cyanide treatment

    NASA Astrophysics Data System (ADS)

    Pincik, Emil; Kobayashi, Hikaru; Jurecka, Stanislav; Jergel, Matej; Gleskova, Helena; Takahashi, Masao; Brunner, Robert; Fujiwara, Naozumi; Mullerova, Jarmila

    2004-12-01

    The paper deals with investigation of electrical, structural and optical properties of very thin oxide/a-Si:H interfaces passivated by chemical treatment by KCN and HCN solutions. The oxide layers were prepared by thermal, chemical and plasma or ion beam assisted oxidations. Interface properties were evaluated by charge version of deep level transient spectroscopy, C-V measurements, X-ray diffraction (in both Bragg-Brentano and grazing incidence modes), optical reflectance (based on genetic algorithm) and photoluminescence. Considerable interest was devoted to distribution of three dominant groups of a-Si:H defect states in the band gap of the semiconductor as well as their response to bias annealing and light soaking experiments. We will present also dominant result - increase of the efficiency of a-Si:H based solar cells after chemical treatment. Finally, we will present the chemical passivation and oxidization as promising techniques suitable for applications in the field of nanotechnology.

  4. Ultralight amorphous silicon alloy photovoltaic modules for space applications

    NASA Technical Reports Server (NTRS)

    Hanak, J. J.; Chen, Englade; Fulton, C.; Myatt, A.; Woodyard, J. R.

    1987-01-01

    Ultralight and ultrathin, flexible, rollup monolithic PV modules have been developed consisting of multijunction, amorphous silicon alloys for either terrestrial or aerospace applications. The rate of progress in increasing conversion efficiency of stable multijunction and multigap PV cells indicates that arrays of these modules can be available for NASA's high power systems in the 1990's. Because of the extremely light module weight and the highly automated process of manufacture, the monolithic a-Si alloy arrays are expected to be strongly competitive with other systems for use in NASA's space station or in other large aerospace applications.

  5. Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices: Final Report, 24 August 1998-23 October 2001

    SciTech Connect

    Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Eser, E.; Hegedus, S. S.; McCandless, B. E.; Aparicio, R.; Dobson, K.

    2003-01-01

    This report describes results achieved during a three-year subcontract to develop and understand thin-film solar cell technology associated to CuInSe2 and related alloys, a-Si and its alloys, and CdTe. Modules based on all these thin films are promising candidates to meet DOE long-range efficiency, reliability, and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for the development of viable commercial processes and to improve module performance. The generic research issues addressed are: (1) quantitative analysis of processing steps to provide information for efficient commercial-scale equipment design and operation; (2) device characterization relating the device performance to materials properties and process conditions; (3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; (4) development of improved window/heterojunction layers and contacts to improve device performance and reliability; and (5) evaluation of cell stability with respect to illumination, temperature, and ambient and with respect to device structure and module encapsulation.

  6. Optimization of Processing and Modeling Issues for Thin-Film Solar Cell Devices; Annual Report, 3 February 1997-2 February 1998

    SciTech Connect

    Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Hegedus, S. S.; McCandless, B. E.

    1998-12-08

    This report describes results achieved during phase I of a four-phase subcontract to develop and understand thin-film solar cell technology associated with CuInSe2 and related alloys, a-Si and its alloys, and CdTe. Modules based on all these thin films are promising candidates to meet DOE long-range efficiency, reliability, and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for developing viable commercial processes and to improve module performance. The generic research issues addressed are: (1) quantitative analysis of processing steps to provide information for efficient commercial-scale equipment design and operation; (2) device characterization relating the device performance to materials properties and process conditions; (3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; (4) development of improved window/heterojunction layers and contacts to improve device performance and reliability; and (5) evaluation of cell stability with respect to illumination, temperature, and ambient and with respect to device structure and module encapsulation.

  7. Metal alloy identifier

    DOEpatents

    Riley, William D.; Brown, Jr., Robert D.

    1987-01-01

    To identify the composition of a metal alloy, sparks generated from the alloy are optically observed and spectrographically analyzed. The spectrographic data, in the form of a full-spectrum plot of intensity versus wavelength, provide the "signature" of the metal alloy. This signature can be compared with similar plots for alloys of known composition to establish the unknown composition by a positive match with a known alloy. An alternative method is to form intensity ratios for pairs of predetermined wavelengths within the observed spectrum and to then compare the values of such ratios with similar values for known alloy compositions, thereby to positively identify the unknown alloy composition.

  8. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

    PubMed

    Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

    2015-01-01

    In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

  9. Simulation of a high-efficiency silicon-based heterojunction solar cell

    NASA Astrophysics Data System (ADS)

    Jian, Liu; Shihua, Huang; Lü, He

    2015-04-01

    The basic parameters of a-Si:H/c-Si heterojunction solar cells, such as layer thickness, doping concentration, a-Si:H/c-Si interface defect density, and the work functions of the transparent conducting oxide (TCO) and back surface field (BSF) layer, are crucial factors that influence the carrier transport properties and the efficiency of the solar cells. The correlations between the carrier transport properties and these parameters and the performance of a-Si:H/c-Si heterojunction solar cells were investigated using the AFORS-HET program. Through the analysis and optimization of a TCO/n-a-Si:H/i-a-Si:H/p-c-Si/p+-a-Si:H/Ag solar cell, a photoelectric conversion efficiency of 27.07% (VOC) 749 mV, JSC: 42.86 mA/cm2, FF: 84.33%) was obtained through simulation. An in-depth understanding of the transport properties can help to improve the efficiency of a-Si:H/c-Si heterojunction solar cells, and provide useful guidance for actual heterojunction with intrinsic thin layer (HIT) solar cell manufacturing. Project supported by the National Natural Science Foundation of China (No. 61076055), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. FDS-KL2011-04), the Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012), and the Zhejiang Provincial Key Laboratory (No. 2013E10022).

  10. Investigation of bonding characteristics between Si quantum dots and a SiO2 matrix.

    PubMed

    Park, Youngbin; Kim, Shinho; Moon, Jihyun; Lee, Jung Chul; Kim, Yangdo

    2012-02-01

    In order to understand and control the properties of Si quantum dot (QD) superlattice structures (SLS), it is necessary to investigate the bonding between the dots and their matrix and also the structures' crystallinities. In this study, a SiOx matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si QD SLS were prepared by alternating deposition of Si rich SiOx (x = 0.8) and SiO2 layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and 1,100 degrees C under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Raman and FTIR spectra revealed that nanocrystalline Si QDs started to precipitate after annealing at 1,100 degrees C for 1 hour. TEM images clearly showed SRO/SiO2 SLS and Si QDs formation in SRO layers after annealing at 1,100 degrees C for 2 hours. XPS analysis showed that Si-Si and Si-O bonding changes occurred above 1,100 degrees C. XPS analysis also revealed that Si QD SLSs started stabilizing after 2 hours' annealing and approached completion after 3 hours'. The systematic investigation of Si QDs in SiO2 matrices and their properties for solar cell application are presented.

  11. Solar Cells from Earth-Abundant Semiconductors with Plasmon-Enhanced Light Absorption

    SciTech Connect

    Atwater, Harry

    2012-04-30

    Progress is reported in these areas: Plasmonic Light Trapping in Thin Film a-Si Solar Cells; Plasmonic Light Trapping in Thin InGaN Quantum Well Solar Cells; and Earth Abundant Cu{sub 2}O and Zn{sub 3}P{sub 2} Solar Cells.

  12. Photoemission study of Au on a-Si:H

    NASA Astrophysics Data System (ADS)

    Pi, Tun-Wen; Yang, A.-B.; Olson, C. G.; Lynch, D. W.

    1990-11-01

    We report a high-resolution photoemission study of Au evaporated on rf-sputtered a-Si:H at room temperature. Three regions of coverage can be classified according to the behavior of the valence-band and core-level spectra: an unreacted region with an equivalent thickness of 2 Å, followed by an intermixed Au/a-Si overlayer (~9 Å), and a dual-phase region at higher coverage. Au adatoms are dispersed in the unreacted region. They subsequently cluster in the intermixed region, where they attach to Si atoms that are not hydrogen bonded, suggesting that the intermixed Si is mainly from those that have dangling bonds. In the dual-phase region, two sets of Au 4f core levels evolve with higher binding energy, one from Au intermixed with Si, and the lower one exhibiting pure gold character. The interface eventually ends up with the sequence: a-Si:H(sub.)+(pure Au mixed with intermixed Au/Si)+(vac). This is unlike the case of Au on c-Si, which has a pure gold layer sandwiched by intermixed Au/Si complexes along the surface normal. Traces of silicon atoms on top of composite surfaces appear even at the highest coverage, 205 Å, of the gold deposit. The applicability of the four models previously used for the Au/c-Si interface is also briefly discussed.

  13. Charactrization of a Li-ion battery based stand-alone a-Si photovoltaic system

    NASA Astrophysics Data System (ADS)

    Hamid Vishkasougheh, Mehdi; Tunaboylu, Bahadir

    2014-11-01

    The number of photovoltaic (PV) system installations is increasing rapidly. As more people learn about this versatile and often cost-effective power option, this trend will accelerate. This document presents a recommended design for a battery based stand-alone photovoltaic system (BSPV). BSPV system has the ability to be applied in different areas, including warning signals, lighting, refrigeration, communication, residential water pumping, remote sensing, and cathodic protection. The presented calculation method gives a proper idea for a system sizing technique. Based on application load, different scenarios are possible for designing a BSPV system. In this study, a battery based stand-alone system was designed. The electricity generation part is three a-Si panels, which are connected in parallel, and for the storage part LFP (lithium iron phosphate) battery was used. The high power LFP battery packs are 40 cells each 8S5P (configured 8 series 5 parallel). Each individual pack weighs 0.5 kg and is 25.6 V. In order to evaluate the efficiency of a-Si panels with respect to the temperature and the solar irradiation, cities of Istanbul, Ankara and Adana in Turkey were selected. Temperature and solar irradiation were gathered from reliable sources and by using translation equations, current and voltage output of panels were calculated. As a result of these calculations, current and energy outputs were computed by considering an average efficient solar irradiation time value per day in Turkey. The calculated power values were inserted to a battery cycler system, and the behavior of high power LFP batteries in a time sequence of 7.2 h was evaluated. The charging and discharging cycles were obtained and their behavior was discussed. According to the results, Istanbul has the lowest number of peak month's energy, it followed by Ankara, and ultimately Adana has the highest number of peak months and energy storage. It was observed during the tests that values up to 4 A was

  14. Formation of a Positive Fixed Charge at c -Si (111 )/a -Si3N3.5:H Interfaces

    NASA Astrophysics Data System (ADS)

    Hintzsche, L. E.; Fang, C. M.; Marsman, M.; Lamers, M. W. P. E.; Weeber, A. W.; Kresse, G.

    2015-06-01

    Modern electronic devices are unthinkable without the well-controlled formation of interfaces at heterostructures. These structures often involve at least one amorphous material. Modeling such interfaces poses a significant challenge, since a meaningful result can be expected only by using huge models or by drawing from many statistically independent samples. Here we report on the results of high-throughput calculations for interfaces between crystalline silicon (c -Si ) and amorphous silicon nitride (a -Si3N3.5:H ), which are omnipresent in commercially available solar cells. The findings reconcile only partly understood key features. At the interface, threefold-coordinated Si atoms are present. These are caused by the structural mismatch between the amorphous and crystalline parts. The local Fermi level of undoped c -Si lies well below that of a -Si N :H . To align the Fermi levels in the device, charge is transferred from the a -Si N :H part to the c -Si part resulting in an abundance of positively charged, threefold-coordinated Si atoms at the interface. This explains the existence of a positive, fixed charge at the interface that repels holes.

  15. Effect of fluorine on the structural and electronic properties of a-Si:H:F

    NASA Astrophysics Data System (ADS)

    Langford, A. A.; Mahan, A. H.; Fleet, M. L.; Bender, J.

    1990-04-01

    The effects of fluorine incorporation on the microstructural and electronic properties of a-Si:H:F with 1-7 at. % F have been systematically studied. Infrared spectra show that as the fluorine content increases, silicon dihydride bonding increases. Density measurements confirm that this is associated with an increase in microvoid content, suggesting that fluorine induces the formation of voids which are lined with SiH2. With the increase in F and SiH2, the photoconductivity of the material decreases over 4 orders of magnitude. A review of the literature shows that the appearance of SiH2 is a universal result of >1 at. % F incorporation by many techniques and is not limited to the present study. Mechanisms by which fluorine can induce structural changes are evaluated. These results are contrasted with the use of fluorinated process gases to deposit microcrystalline films and Si-Ge alloys. This has implications for the incorporation of fluorine in photovoltaic devices.

  16. Solar cells - A technology assessment

    NASA Astrophysics Data System (ADS)

    Bolton, J. R.

    1983-01-01

    A qualitative assessment is made of the state-of-the-art in solar cell development and materials, together with projections of areas of future progress. The benefits and deficiencies of solar cells are surveyed, including the passive, low maintenance qualities of solar cell panels, the necessity of having a back-up system at night, and the low power conversion efficiencies available from current cells, about 10 percent. Loss mechanisms are considered, as are single crystal Si and GaAs cells, edge-defined and thin film wafers, and polycrystalline materials. Amorphous silicon cells have a wider bandgap than single crystal cells and thus allow tailoring in lower-cost mass production conditions; however, efficiencies of only 7.9 percent have been achieved with a-Si solar cells. The most favorable aspect of Si as cell material is its abundance on earth. Work is also proceeding on photoelectrochemical cells, multijunction cells, concentrator systems, and advanced junction formation techniques.

  17. First Approach to Lightweight Solar Panel Using Space Solar Sheet

    NASA Astrophysics Data System (ADS)

    Shimazaki, Kazunori; Takahashi, Masato; Imaizumi, Mitsuru; Takamoto, Tatsuya; Ito, Takehiko; Nozaki, Yukishige

    2008-09-01

    Development of a lightweight solar panel using space solar sheets is underway. Space solar sheets consist of paper-like thin-film InGaP/GaAs solar cells, which generate higher electrical power than a-Si and Cu(In,Ga)Se2 thin-film solar cells. The objective of this work is to develop a lightweight solar panel with specific power greater than 100 W/kg using the solar sheet. The panel employs a simple frame-type structure. The architecture is inherently modular and scalable. In this study, a breadboard model was manufactured. The dimensions of the 1.0-cm-thick panel were about 55 cm × 70 cm. Each panel weighs approximately 0.68 kg. The breadboard panel is a small prototype model, but it achieves the high specific power of about 88 W/kg. Higher specific power (> 100 W/kg) can be realized by increasing the solar sheet efficiency, optimizing its structural design and scaling up the module.

  18. The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

    NASA Astrophysics Data System (ADS)

    Sritharathikhun, Jaran; Inthisang, Sorapong; Krajangsang, Taweewat; Krudtad, Patipan; Jaroensathainchok, Suttinan; Hongsingtong, Aswin; Limmanee, Amornrat; Sriprapha, Kobsak

    2016-12-01

    Hydrogenated amorphous silicon oxide (a-Si1-xOx:H) film was used as a buffer layer at the p-layer (μc-Si1-xOx:H)/i-layer (a-Si1-xGex:H) interface for a narrow band gap hydrogenated amorphous silicon germanium (a-Si1-xGex:H) single-junction solar cell. The a-Si1-xOx:H film was deposited by plasma enhanced chemical vapor deposition (PECVD) at 40 MHz in a same processing chamber as depositing the p-type layer. An optimization of the thickness of the a-Si1-xOx:H buffer layer and the CO2/SiH4 ratio was performed in the fabrication of the a-Si1-xGex:H single junction solar cells. By using the wide band gap a-Si1-xOx:H buffer layer with optimum thickness and CO2/SiH4 ratio, the solar cells showed an improvement in the open-circuit voltage (Voc), fill factor (FF), and short circuit current density (Jsc), compared with the solar cells fabricated using the conventional a-Si:H buffer layer. The experimental results indicated the excellent potential of the wide-gap a-Si1-xOx:H buffer layers for narrow band gap a-Si1-xGex:H single junction solar cells.

  19. Superconductivity in Metals and Alloys.

    DTIC Science & Technology

    LEAD(METAL), LIQUEFIED GASES, LOW TEMPERATURE RESEARCH, METAL FILMS, METALLIC SOAPS, NIOBIUM ALLOYS, PHASE STUDIES, RESISTANCE (ELECTRICAL), SAMARIUM...SYNTHESIS, TANTALUM ALLOYS, TIN, TIN ALLOYS, TRANSITION TEMPERATURE, VANADIUM ALLOYS

  20. Substrate for thin silicon solar cells

    DOEpatents

    Ciszek, Theodore F.

    1995-01-01

    A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

  1. Substrate for thin silicon solar cells

    DOEpatents

    Ciszek, T.F.

    1995-03-28

    A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.

  2. Simple fabrication of back contact heterojunction solar cells by plasma ion implantation

    NASA Astrophysics Data System (ADS)

    Koyama, Koichi; Yamaguchi, Noboru; Hironiwa, Daisuke; Suzuki, Hideo; Ohdaira, Keisuke; Matsumura, Hideki

    2017-08-01

    A back-contact amorphous-silicon (a-Si)/crystalline silicon (c-Si) heterojunction is one of the most promising structures for high-efficiency solar cells. However, the patterning of back-contact electrodes causes the increase in fabrication cost. Thus, to simplify the fabrication of back-contact cells, we attempted to form p-a-Si/i-a-Si/c-Si and n-a-Si/i-a-Si/c-Si regions by the conversion of a patterned area of p-a-Si/i-a-Si/c-Si to n-a-Si/i-a-Si/c-Si by plasma ion implantation. It is revealed that the conversion of the conduction type can be realized by the plasma ion implantation of phosphorus (P) atoms into p-a-Si/i-a-Si/c-Si regions, and also that the quality of passivation can be kept sufficiently high, the same as that before ion implantation, when the samples are annealed at around 250 °C and also when the energy and dose of ion implantation are appropriately chosen for fitting to a-Si layer thickness and bulk c-Si carrier density.

  3. Thermodynamic considerations for epitaxial growth of III/V alloys

    NASA Astrophysics Data System (ADS)

    Stringfellow, G. B.

    2017-06-01

    III/V semiconductor alloys have been extensively studied because of their usefulness for electronic and photonic devices. Nevertheless, the search for new alloys for specific applications continues. Often, thermodynamic factors restrict the compositional range accessible by epitaxial growth processes, particularly when the size difference between atoms mixing on a particular sublattice is large. This causes solid phase immiscibility, leading to important effects on the epitaxial growth, the resultant alloy properties, and, consequently, device performance. Stringent thermodynamic limits exist for a number of alloys being considered for advanced LED, laser, and solar cell applications where the atomic sizes are very dissimilar, such as GaInN, GaAsN and GaAsBi. This paper will review the basic thermodynamics of the epitaxial growth processes and mixing in semiconductor alloys, as well as the causes and consequences of the resultant complex microstructures.

  4. Turbine Blade Alloy

    NASA Technical Reports Server (NTRS)

    MacKay, Rebecca

    2001-01-01

    The High Speed Research Airfoil Alloy Program developed a fourth-generation alloy with up to an +85 F increase in creep rupture capability over current production airfoil alloys. Since improved strength is typically obtained when the limits of microstructural stability are exceeded slightly, it is not surprising that this alloy has a tendency to exhibit microstructural instabilities after high temperature exposures. This presentation will discuss recent results obtained on coated fourth-generation alloys for subsonic turbine blade applications under the NASA Ultra-Efficient Engine Technology (UEET) Program. Progress made in reducing microstructural instabilities in these alloys will be presented. In addition, plans will be presented for advanced alloy development and for computational modeling, which will aid future alloy development efforts.

  5. Tandem solar cells made from amorphous silicon and polymer bulk heterojunction sub-cells.

    PubMed

    Park, Sung Heum; Shin, Insoo; Kim, Kwang Ho; Street, Robert; Roy, Anshuman; Heeger, Alan J

    2015-01-14

    A tandem solar cell based on a combination of an amorphous silicon (a-Si) and polymer solar cell (PSC) is demonstrated. As these tandem devices can be readily fabricated by low-cost methods, they require only a minor increase in the total manufacturing cost. Therefore, a combination of a-Si and PSC provides a compelling solution to reduce the cost of electricity produced by photovoltaics. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Accelerated stress testing of amorphous silicon solar cells

    NASA Technical Reports Server (NTRS)

    Stoddard, W. G.; Davis, C. W.; Lathrop, J. W.

    1985-01-01

    A technique for performing accelerated stress tests of large-area thin a-Si solar cells is presented. A computer-controlled short-interval test system employing low-cost ac-powered ELH illumination and a simulated a-Si reference cell (seven individually bandpass-filtered zero-biased crystalline PIN photodiodes) calibrated to the response of an a-Si control cell is described and illustrated with flow diagrams, drawings, and graphs. Preliminary results indicate that while most tests of a program developed for c-Si cells are applicable to a-Si cells, spurious degradation may appear in a-Si cells tested at temperatures above 130 C.

  7. Advanced Cast Aluminum Alloys

    DTIC Science & Technology

    2009-02-01

    microstructure of the Al - Zn -Mg- Cu alloys was similar to the as-cast microstructure ...Further, new research has been initiated on ultra-high strength, microalloyed Al - Zn -Mg- Cu alloys with the goal of producing complex castings with...wrought 2519 alloy . Further, new research has been initiated on ultra-high strength, microalloyed Al - Zn -Mg- Cu alloys with the goal of producing

  8. Silicon purification using a Cu-Si alloy source

    NASA Technical Reports Server (NTRS)

    Powell, R. C.; Tejedor, P.; Olson, J. M.

    1986-01-01

    Production of 99.9999% pure silicon from 98% pure metallurgical grade (MG) silicon by a vapor transport filtration process (VTP) is described. The VTF process is a cold wall version of an HCl chemical vapor transport technique using a Si:Cu3Si alloy as the silicon source. The concentration, origin, and behavior of the various impurities involved in the process were determined by chemically analyzing alloys of different purity, the slag formed during the alloying process, and the purified silicon. Atomic absorption, emission spectrometry, inductively coupled plasma, spark source mass spectrometry, and secondary ion mass spectroscopy were used for these analyses. The influence of the Cl/H ratio and the deposition temperature on the transport rate was also investigated.

  9. Spectroscopic and microscopic studies of self-assembled nc-Si/a-SiC thin films grown by low pressure high density spontaneous plasma processing.

    PubMed

    Das, Debajyoti; Kar, Debjit

    2014-12-14

    In view of suitable applications in the window layer of nc-Si p-i-n solar cells in superstrate configuration, the growth of nc-Si/a-SiC composite films was studied, considering the trade-off relation between individual characteristics of its a-SiC component to provide a wide optical-gap and electrically conducting nc-Si component to simultaneously retain enough crystalline linkages to facilitate proper crystallization to the i-nc-Si absorber-layer during its subsequent growth. Self-assembled nc-Si/a-SiC thin films were spontaneously grown by low-pressure planar inductively coupled plasma CVD, operating in electromagnetic mode, providing high atomic-H density. Spectroscopic simulations of ellipsometry and Raman data, and systematic chemical and structural analysis by XPS, TEM, SEM and AFM were performed. Corresponding to optimized inclusion of C essentially incorporated as Si-C bonds in the network, the optical-gap of the a-SiC component widened, void fraction including the incubation layer thickness reduced. While the bulk crystallinity decreased only marginally, Si-ncs diminished in size with narrower distribution and increased number density. With enhanced C-incorporation, formation of C-C bonds in abundance deteriorates the Si continuous bonding network and persuades growth of an amorphous dominated silicon-carbon heterostructure containing high-density tiny Si-ncs. Stimulated nanocrystallization identified in the Si-network, induced by a limited amount of carbon incorporation, makes the material most suitable for applications in nc-Si solar cells. The novelty of the present work is to enable spontaneous growth of self-assembled superior quality nc-Si/a-SiC thin films and simultaneous spectroscopic simulation-based optimization of properties for utilization in devices.

  10. Film Si Solar Cells with Nano Si: Cooperative Research and Development Final Report, CRADA Number CRD-09-00356

    SciTech Connect

    Wang, Q.

    2011-05-01

    Nevada Nanotechnology Center and Si group at NREL will work together to develop a-Si based solar cells with nano-Si technique. We will explore the existing a-Si based film solar cell technology at NREL and nano scale Si technology at Nevada Nanotechnology Center. By exchanging information, we will come; up with some new cell structures using nano-Si. We expect the new a-Si based cells will have optical enhancement or better electronic or optical properties of absorber layer to improve solar cell performance.

  11. Brillouin spectroscopy of progressively annealed amorphous a-Si:H/a-SiC_x:H finite-stage superlattices

    NASA Astrophysics Data System (ADS)

    Xia, Hua; Zhang, X.-K.; Chen, K.-J.; Zhang, Wei; Li, Z.-F.; Feng, Duan

    1996-03-01

    Changes in the elastic properties up to an anneal temperature (T_a) of 800 ^circC of amorphous a-Si:H/a-SiC_x:H finite-stage quasiperiodic superlattices (FQSLs) have been measured by Brillouin light-scattering. At room temperature phase velocity of surface acoustic Rayleigh wave is found to decrease with increasing Fibonacci stage number from j=7 to j=12. Modifications in the structure due to annealing are found at two thresholds. When T_a= 300 ^circC shear modulus c_44 of the superlatrtices starts to increase while the hydrogen atoms begin to evaporate from the structure. This modulus is enhanced by 20% for a 7th-stage FQSL but up to 48% for a 12th-stage FQSL at crystallization temperature T_c=540 ^circC at which temperature the hydrogen is fully evaporated from the sample. However, no difference in the Tc is found for both the superlattices with different stages and the a-Si:H sample. Futher annealing of the superlattices reveals rapidly interlayer two-dimensional grwoth of nanocrystals in strain-free high-order FQSLs which leads to a gradient variation of 5.25×10-2 GPa/^circC in the c_44. Retarded crystallization effect occurring in the low-stage FQSLs is found and attributed to structural and elastic strain related effects. Futhermore, a detailed theoretical model in terms of an effective medium approximation is developed and compared with above results.

  12. Peeling process of thin-film solar cells using graphene layers

    NASA Astrophysics Data System (ADS)

    Ishikawa, Ryousuke; Kurokawa, Yasuyoshi; Miyajima, Shinsuke; Konagai, Makoto

    2017-08-01

    A novel peeling process for thin-film solar cells using graphene layers was demonstrated. We fabricated amorphous silicon (a-Si) solar cells as substitutes for the undeveloped nanostructured silicon solar cells on graphene layers in order to investigate the solar cell performance after peeling for the first time. The graphene layers functioned as transparent electrodes after the peeling process, even though the series resistance increased after the peeling. Next, we fabricated a silicon nanowire (SiNW) array on graphene layers by a combination of chemical etching and thermal crystallization. Finally, we successfully peeled a SiNW array using graphene layers.

  13. Enhancement of optical absorption in silicon thin-film solar cells with metal nanoparticles

    NASA Astrophysics Data System (ADS)

    Shi, Bo; Wang, Wei; Yu, Xueqing; Yang, Lili; Xu, Yuanpei

    2017-05-01

    Light trapping structures are a promising method of improving the efficiency of solar cells. We focused on the plasmonic thin-film solar cell. A structure is proposed consisting of an indium tin oxide layer with embedded metal nanoparticles, a hydrogenated amorphous silicon (a-Si:H) layer, and an aluminum (Al) layer. The finite-difference-time-domain (FDTD) method was used to calculate the absorption characteristics of the a-Si:H thin-film solar cells containing nanoparticles. By arranging the material, size, and locations of metal nanoparticles to maximize the scattering and minimize absorption of nanoparticles themselves, the optical absorption in the solar cell is significantly enhanced.

  14. Solar Cookers.

    ERIC Educational Resources Information Center

    King, Richard C.

    1981-01-01

    Describes the use of solar cookers in the science classroom. Includes instructions for construction of a solar cooker, an explanation of how solar cookers work, and a number of suggested activities. (DS)

  15. Amorphous thin films for solar-cell applications. Final report, September 11, 1978-September 10, 1979

    SciTech Connect

    Carlson, D E; Balberg, I; Crandall, R S; Goldstein, B C; Hanak, J J; Pankove, J I; Staebler, D L; Weakliem, H A; Williams, R

    1980-02-01

    In Section II, Theoretical Modeling, theories for the capture of electrons by deep centers in hydrogenated amorphous silicon (a-Si:H) and for field-dependent quantum efficiency in a-Si:H are presented. In Section III, Deposition and Doping Studies, the optimization of phosphorus-doped a-Si:H carried out in four different discharge systems is described. Some details of the dc proximity and rf magnetron discharge systems are also provided. Preliminary mass spectroscopy studies of the rf magnetron discharge in both SiH/sub 4/ and SiF/sub 4/ are presented. In Section IV, Experimental Methods for Characterizing a-Si:H, recent work involving photoluminescence of fluorine-doped a-Si:H, photoconductivity spectra, the photoelectromagnetic effect, the photo-Hall effect and tunneling into a-Si:H is presented. Also, studies of the growth mechanism of Pt adsorbed on both crystalline Si and a-Si:H are described. Measurements of the surface photovoltage have been used to estimate the distribution of surface states of phosphorus-doped and undoped a-Si:H. Section V, Formation of Solar-Cell Structures, contains information on stacked or multiple-junction a-Si:H solar cells. In Section VI, Theoretical and Experimental Evaluation of Solar-Cell Parameters, an upper limit of approx. = 400 A is established for the hole diffusion length in undoped a-Si:H. A detailed description of carrier generation, recombination and transport in a-Si:H solar cells is given. Finally, some characteristics of Pd-Schottky-barrier cells are described for different processing histories.

  16. SUPERCONDUCTING VANADIUM BASE ALLOY

    DOEpatents

    Cleary, H.J.

    1958-10-21

    A new vanadium-base alloy which possesses remarkable superconducting properties is presented. The alloy consists of approximately one atomic percent of palladium, the balance being vanadium. The alloy is stated to be useful in a cryotron in digital computer circuits.

  17. PLUTONIUM-THORIUM ALLOYS

    DOEpatents

    Schonfeld, F.W.

    1959-09-15

    New plutonium-base binary alloys useful as liquid reactor fuel are described. The alloys consist of 50 to 98 at.% thorium with the remainder plutonium. The stated advantages of these alloys over unalloyed plutonium for reactor fuel use are easy fabrication, phase stability, and the accompanying advantuge of providing a means for converting Th/sup 232/ into U/sup 233/.

  18. DELTA PHASE PLUTONIUM ALLOYS

    DOEpatents

    Cramer, E.M.; Ellinger, F.H.; Land. C.C.

    1960-03-22

    Delta-phase plutonium alloys were developed suitable for use as reactor fuels. The alloys consist of from 1 to 4 at.% zinc and the balance plutonium. The alloys have good neutronic, corrosion, and fabrication characteristics snd possess good dimensional characteristics throughout an operating temperature range from 300 to 490 deg C.

  19. Weldability of intermetallic alloys

    SciTech Connect

    David, S.A. )

    1990-01-01

    Ordered intermetallic alloys are a unique class of material that have potential for structural applications at elevated temperatures. The paper describes the welding and weldability of these alloys. The alloys studied were nickel aluminide (Ni[sub 3]Al), titanium aluminide (Ti[sub 3]Al), and iron aluminide.

  20. Separation in Binary Alloys

    NASA Technical Reports Server (NTRS)

    Frazier, D. O.; Facemire, B. R.; Kaukler, W. F.; Witherow, W. K.; Fanning, U.

    1986-01-01

    Studies of monotectic alloys and alloy analogs reviewed. Report surveys research on liquid/liquid and solid/liquid separation in binary monotectic alloys. Emphasizes separation processes in low gravity, such as in outer space or in free fall in drop towers. Advances in methods of controlling separation in experiments highlighted.

  1. Electrical and optical properties of hydrogenated amorphous silicon-germanium (a-Si1 - xGexH) films prepared by reactive ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Bhan, Mohan Krishan; Malhotra, L. K.; Kashyap, Subhash C.

    1989-09-01

    Thin films of hydrogenated amorphous silicon-germanium (a-Si1-xGex: H) alloys have been prepared by reactive ion beam sputtering of a composite target of silicon and germanium. The dependence of the deposition rate, conductivity-temperature variation, optical absorption coefficient, refractive index, imaginary part of the dielectric constant, hydrogen content, and infrared (IR) absorption spectra on germanium content (x) are reported and analyzed. For a typical composition—a-Si28Ge72:H (x=0.72), the effect of beam voltage, H2:Ar flow ratio, and substrate temperature on the material properties have also been investigated. For the films prepared with increasing x, the expected behavior of a decrease in both hydrogen content and band gap and an increase in the electrical conductivity have been observed. The films prepared at x>0.80 are found to be more homogeneous than the films deposited at 0.0a-Si1-xGex: H network in the latter case. The a-Si28Ge72:H films exhibiting minimum conductivity (1.7×10-7 Ω-1 cm-1) have been obtained for an H2:Ar flow ratio of 10:1 and a beam voltage and substrate temperature of 1500 V and 300 °C, respectively. These films contain a hydrogen concentration of 10.2 at. % and show an optical band gap of 1.25 eV. The IR studies have shown that a-Si28Ge72:H films prepared both at low beam voltages and at low substrate temperatures show the unusual preferential attachment of hydrogen to Ge rather than to Si.

  2. Rhenium alloying of tungsten heavy alloys

    SciTech Connect

    German, R.M.; Bose, A.; Jerman, G.

    1989-01-01

    Alloying experiments were performed using rhenium additions to a classic 90 mass % tungsten heavy alloy. The mixed-powder system was liquid phase sintered to full density at 1500 C in 60 min The rhenium-modified alloys exhibited a smaller grain size, higher hardness, higher strength, and lower ductility than the unalloyed system. For an alloy with a composition of 84W-6Re-8Ni-2Fe, the sintered density was 17, 4 Mg/m{sup 3} with a yield strength of 815 MPa, tensile strength of 1180 MPa, and elongation to failure of 13%. This property combination results from the aggregate effects of grain size reduction and solid solution hardening due to rhenium. In the unalloyed system these properties require post-sintering swaging and aging; thus, alloying with rhenium is most attractive for applications where net shaping is desired, such as by powder injection molding.

  3. Processing and alloying of tungsten heavy alloys

    SciTech Connect

    Bose, A.; Dowding, R.J.

    1993-12-31

    Tungsten heavy alloys are two-phase metal matrix composites with a unique combination of density, strength, and ductility. They are processed by liquid-phase sintering of mixed elemental powders. The final microstructure consists of a contiguous network of nearly pure tungsten grains embedded in a matrix of a ductile W-Ni-Fe alloy. Due to the unique property combination of the material, they are used extensively as kinetic energy penetrators, radiation shields. counterbalances, and a number of other applications in the defense industry. The properties of these alloys are extremely sensitive to the processing conditions. Porosity levels as low as 1% can drastically degrade the properties of these alloys. During processing, care must be taken to reduce or prevent incomplete densification, hydrogen embrittlement, impurity segregation to the grain boundaries, solidification shrinkage induced porosity, and in situ formation of pores due to the sintering atmosphere. This paper will discuss some of the key processing issues for obtaining tungsten heavy alloys with good properties. High strength tungsten heavy alloys are usually fabricated by swaging and aging the conventional as-sintered material. The influence of this on the shear localization tendency of a W-Ni-Co alloy will also be demonstrated. Recent developments have shown that the addition of certain refractory metals partially replacing tungsten can significantly improve the strength of the conventional heavy alloys. This development becomes significant due to the recent interest in near net shaping techniques such as powder injection moldings. The role of suitable alloying additions to the classic W-Ni-Fe based heavy alloys and their processing techniques will also be discussed in this paper.

  4. Castability of Magnesium Alloys

    NASA Astrophysics Data System (ADS)

    Bowles, A. L.; Han, Q.; Horton, J. A.

    There is intense research effort into the development of high pressure die cast-able creep resistant magnesium alloys. One of the difficulties encountered in magnesium alloy development for creep resistance is that many additions made to improve the creep properties have reportedly resulted in alloys that are difficult to cast. It is therefore important to have an understanding of the effect of alloying elements on the castability. This paper gives a review of the state of the knowledge of the castability of magnesium alloys.

  5. High strength alloys

    DOEpatents

    Maziasz, Phillip James [Oak Ridge, TN; Shingledecker, John Paul [Knoxville, TN; Santella, Michael Leonard [Knoxville, TN; Schneibel, Joachim Hugo [Knoxville, TN; Sikka, Vinod Kumar [Oak Ridge, TN; Vinegar, Harold J [Bellaire, TX; John, Randy Carl [Houston, TX; Kim, Dong Sub [Sugar Land, TX

    2010-08-31

    High strength metal alloys are described herein. At least one composition of a metal alloy includes chromium, nickel, copper, manganese, silicon, niobium, tungsten and iron. System, methods, and heaters that include the high strength metal alloys are described herein. At least one heater system may include a canister at least partially made from material containing at least one of the metal alloys. At least one system for heating a subterranean formation may include a tubular that is at least partially made from a material containing at least one of the metal alloys.

  6. High strength alloys

    DOEpatents

    Maziasz, Phillip James; Shingledecker, John Paul; Santella, Michael Leonard; Schneibel, Joachim Hugo; Sikka, Vinod Kumar; Vinegar, Harold J.; John, Randy Carl; Kim, Dong Sub

    2012-06-05

    High strength metal alloys are described herein. At least one composition of a metal alloy includes chromium, nickel, copper, manganese, silicon, niobium, tungsten and iron. System, methods, and heaters that include the high strength metal alloys are described herein. At least one heater system may include a canister at least partially made from material containing at least one of the metal alloys. At least one system for heating a subterranean formation may include a tublar that is at least partially made from a material containing at least one of the metal alloys.

  7. Extrusion of aluminium alloys

    SciTech Connect

    Sheppard, T.

    1999-01-01

    In recent years the importance of extruded alloys has increased due to the decline in copper extrusion, increased use in structural applications, environmental impact and reduced energy consumption. There have also been huge technical advances. This text provides comprehensive coverage of the metallurgical, mathematical and practical features of the process. The contents include: continuum principles; metallurgical features affecting the extrusion of Al-alloys; extrusion processing; homogenization and extrusion conditions for specific alloys; processing of 6XXX alloys; plant utilization; Appendix A: specification of AA alloys and DIN equivalents; Appendix B: chemical compositions; and Appendix C: typical properties.

  8. Creep Resistant Zinc Alloy

    SciTech Connect

    Frank E. Goodwin

    2002-12-31

    This report covers the development of Hot Chamber Die Castable Zinc Alloys with High Creep Strengths. This project commenced in 2000, with the primary objective of developing a hot chamber zinc die-casting alloy, capable of satisfactory service at 140 C. The core objectives of the development program were to: (1) fill in missing alloy data areas and develop a more complete empirical model of the influence of alloy composition on creep strength and other selected properties, and (2) based on the results from this model, examine promising alloy composition areas, for further development and for meeting the property combination targets, with the view to designing an optimized alloy composition. The target properties identified by ILZRO for an improved creep resistant zinc die-casting alloy were identified as follows: (1) temperature capability of 1470 C; (2) creep stress of 31 MPa (4500 psi); (3) exposure time of 1000 hours; and (4) maximum creep elongation under these conditions of 1%. The project was broadly divided into three tasks: (1) Task 1--General and Modeling, covering Experimental design of a first batch of alloys, alloy preparation and characterization. (2) Task 2--Refinement and Optimization, covering Experimental design of a second batch of alloys. (3) Task 3--Creep Testing and Technology transfer, covering the finalization of testing and the transfer of technology to the Zinc industry should have at least one improved alloy result from this work.

  9. Raman spectroscopy of PIN hydrogenated amorphous silicon solar cells

    NASA Astrophysics Data System (ADS)

    Keya, Kimitaka; Torigoe, Yoshihiro; Toko, Susumu; Yamashita, Daisuke; Seo, Hyunwoong; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu

    2015-09-01

    Light-induced degradation of hydrogenated amorphous silicon (a-Si:H) is a key issue for enhancing competitiveness in solar cell market. A-Si:H films with a lower density of Si-H2 bonds shows higher stability. Here we identified Si-H2 bonds in PIN a-Si:H solar cells fabricated by plasma CVD using Raman spectroscopy. A-Si:H solar cell has a structure of B-doped μc-SiC:H (12.5 nm)/ non-doped a-Si:H (250nm)/ P-doped μc-Si:H (40 nm) on glass substrates (Asahi-VU). By irradiating HeNe laser light from N-layer, peaks correspond to Si-H2 bonds (2100 cm-1) and Si-H bonds (2000 cm-1) have been identified in Raman scattering spectra. The intensity ratio of Si-H2 and Si-H ISiH2/ISiH is found to correlate well to light induced degradation of the cells Therefore, Raman spectroscopy is a promising method for studying origin of light-induced degradation of PIN solar cells.

  10. Gamma titanium aluminide alloys

    SciTech Connect

    Yamaguchi, M.; Inui, H.; Kishida, K.; Matsumuro, M.; Shirai, Y.

    1995-08-01

    Extensive progress and improvements have been made in the science and technology of gamma titanium aluminide alloys within the last decade. In particular, the understanding of their microstructural characteristics and property/microstructure relationships has been substantially deepened. Based on these achievements, various engineering two-phase gamma alloys have been developed and their mechanical and chemical properties have been assessed. Aircraft and automotive industries arc pursuing their introduction for various structural components. At the same time, recent basic studies on the mechanical properties of two-phase gamma alloys, in particular with a controlled lamellar structure have provided a considerable amount of fundamental information on the deformation and fracture mechanisms of the two-phase gamma alloys. The results of such basic studies are incorporated in the recent alloy and microstructure design of two-phase gamma alloys. In this paper, such recent advances in the research and development of the two-phase gamma alloys and industrial involvement are summarized.

  11. MBE growth of GaP on a Si substrate

    SciTech Connect

    Sobolev, M. S. Lazarenko, A. A.; Nikitina, E. V.; Pirogov, E. V.; Gudovskikh, A. S.; Egorov, A. Yu.

    2015-04-15

    It is shown that single-crystal GaP buffer layers can be formed on a Si substrate by molecular-beam epitaxy, with the “migration-enhanced epitaxy” procedure applied in the stage in which the nucleating layer is formed. When a GaP layer is produced on a p-type silicon substrate, a p-n junction is created in a natural way between the p-Si substrate and the surface n-Si layer produced by the diffusion of phosphorus into the substrate during the course of the epitaxial growth of GaP. This p-n junction can be used as the first junction of a silicon-based multijunction photovoltaic converter.

  12. Use of a Si(Li) detector as β spectrometer.

    PubMed

    Dryák, P; Kovář, P

    2014-05-01

    The aim of this work is to demonstrate the capability of a Si(Li) detector for the measurement of β spectra, despite the energy absorption in air and in the Be window. A simple source holder fixes the source on the symmetry axis at 3mm from the detector window. The β-sources are produced by evaporation on a plastic backing plate. Absorbing materials between the source and the sensitive volume of the detector are 3 mm of air, a Be window, 0.1 μm Si and 20 nm of gold. A model of the detector was created for β spectra simulation using the MCNP 4A code. Experimental spectra of (14)C, (147)Pm, (204)Tl, (90)Sr/(90)Y were compared with simulated spectra.

  13. Defect formation mechanism during PECVD of a-Si:H

    SciTech Connect

    Maeda, Keiji; Umezu, Ikurou

    1997-07-01

    Defect formation mechanism in a-Si:H during PECVD at substrate temperature below 250 C is considered to be breaking of weak bonds in the Urbach tail. To break weak bonds, an extra energy is necessary. This energy is supplied by the reaction energy of SiH{sub 3} precursor at the growing surface incorporating SiH{sub 2} into the network. The defect density is experimentally shown to be proportional to a product of the energy supply frequency, i.e., SiH{sub 2} density, and the weak bond density which is obtained by the Urbach energy. By analysis using the configurational coordinate diagram the energy level of the broken weak bond is determined to be 0.2 eV above the valence band mobility edge. There is similarity of the defect formation mechanism during deposition to that of the Staebler-Wronski effect.

  14. Hydrogenated Amorphous Silicon (a-Si:H) Colloids

    SciTech Connect

    Harris, Justin T.; Hueso, Jose L.; Korgel, Brian A.

    2010-12-14

    Colloidal particles of hydrogenated amorphous silicon (a-Si:H) were synthesized by decomposition of trisilane (Si{sub 3}H{sub 8}) in supercritical n-hexane (sc-hexane) at temperatures ranging from 380 to 550 °C. The reaction temperature, pressure and Si{sub 3}H{sub 8} concentration have a significant influence on the average particle size, Si bond order and hydrogen content. The particle diameter could be varied from 170 nm to 1.7 μm, with hydrogen loadings between 10% and 58%. Raman spectroscopy of the particles revealed significant differences in Si bond order that correlated with hydrogen content, with the lowest reaction temperatures yielding particles with the least structural order and most associated hydrogen. Particles synthesized at temperatures higher than 420 °C had sufficient bond order to allow crystallization under the Raman laser probe.

  15. Continuous roll-to-roll a-Si photovoltaic manufacturing technology

    SciTech Connect

    Izu, M. )

    1993-04-01

    This report describes work performed by ECD to advance its roll-to-roll, triple-junction photovoltaic manufacturing technologies; to reduce the module production costs; to increase the stabilized module performance; and to expand the commercial capacity utilizing ECD technology. The 3-year goal is to develop advanced large-scale manufacturing technology incorporating ECD's earlier research advances with the capability of producing modules with stable 11% efficiency at a cost of approximately $1/W[sub p]. Major efforts during Phase I are (1) the optimization of the high-performance back-reflector system, (2) the optimization of a-Si-Ge narrow band-gap solar cell, and (3) the optimization of the stable efficiency of the module. The goal is to achieve a stable 8% efficient 0.3-m [times] 1.2-m (1-ft [times] 4-ft) module. Also, the efforts include work on a proprietary, high-deposition-rate, microwave plasma, CVD manufacturing technology; and on the investigation of material cost reduction.

  16. Weldability of High Alloys

    SciTech Connect

    Maroef, I

    2003-01-22

    The purpose of this study was to investigate the effect of silicon and iron on the weldability of HAYNES HR-160{reg_sign} alloy. HR-I60 alloy is a solid solution strengthened Ni-Co-Cr-Si alloy. The alloy is designed to resist corrosion in sulfidizing and other aggressive high temperature environments. Silicon is added ({approx}2.75%) to promote the formation of a protective oxide scale in environments with low oxygen activity. HR-160 alloy has found applications in waste incinerators, calciners, pulp and paper recovery boilers, coal gasification systems, and fluidized bed combustion systems. HR-160 alloy has been successfully used in a wide range of welded applications. However, the alloy can be susceptible to solidification cracking under conditions of severe restraint. A previous study by DuPont, et al. [1] showed that silicon promoted solidification cracking in the commercial alloy. In earlier work conducted at Haynes, and also from published work by DuPont et al., it was recognized that silicon segregates to the terminal liquid, creating low melting point liquid films on solidification grain boundaries. Solidification cracking has been encountered when using the alloy as a weld overlay on steel, and when joining HR-160 plate in a thickness greater than19 millimeters (0.75 inches) with matching filler metal. The effect of silicon on the weldability of HR-160 alloy has been well documented, but the effect of iron is not well understood. Prior experience at Haynes has indicated that iron may be detrimental to the solidification cracking resistance of the alloy. Iron does not segregate to the terminal solidification product in nickel-base alloys, as does silicon [2], but iron may have an indirect or interactive influence on weldability. A set of alloys covering a range of silicon and iron contents was prepared and characterized to better understand the welding metallurgy of HR-160 alloy.

  17. Robustness up to 400°C of the passivation of c-Si by p-type a-Si:H thanks to ion implantation

    NASA Astrophysics Data System (ADS)

    Defresne, A.; Plantevin, O.; Roca i Cabarrocas, Pere

    2016-12-01

    Heterojunction solar cells based on crystalline silicon (c-Si) passivated by hydrogenated amorphous silicon (a-Si:H) thin films are one of the most promising architectures for high energy conversion efficiency. Indeed, a-Si:H thin films can passivate both p-type and n-type wafers and can be deposited at low temperature (<200°C) using PECVD. However, such passivation layers, in particular p-type a-Si:H, show a dramatic degradation in passivation quality above 200°C. Yet, annealing at 300 - 400°C the TCO layer and metallic contacts is highly desirable to reduce the contact resistance as well as the TCO optical absorption. In this work, we show that as expected, ion implantation (5 - 30 keV) introduces defects at the c-Si/a-Si:H interface which strongly degrade the effective lifetime, down to a few micro-seconds. However, the passivation quality can be restored and lifetime values can be improved up to 2 ms over the initial value with annealing. We show here that effective lifetimes above 1 ms can be maintained up to 380°C, opening up the possibility for higher process temperatures in silicon heterojunction device fabrication.

  18. Solar Energy.

    ERIC Educational Resources Information Center

    Eaton, William W.

    Presented is the utilization of solar radiation as an energy resource principally for the production of electricity. Included are discussions of solar thermal conversion, photovoltic conversion, wind energy, and energy from ocean temperature differences. Future solar energy plans, the role of solar energy in plant and fossil fuel production, and…

  19. Solar Geometry

    Atmospheric Science Data Center

    2014-09-25

    Solar Noon (GMT time) The time when the sun is due south in the ... and sunset.   Daylight average of hourly cosine solar zenith angles (dimensionless) The average cosine of the angle ... overhead during daylight hours.   Cosine solar zenith angle at mid-time between sunrise and solar noon ...

  20. Alloy 10: A 1300F Disk Alloy

    NASA Technical Reports Server (NTRS)

    Gayda, John

    2000-01-01

    Gas turbine engines for future subsonic transports will probably have higher pressure ratios which will require nickel-base superalloy disks with 13000 to 1400 F temperature capability. Several advanced disk alloys are being developed to fill this need. One of these, Allied Signal's Alloy 10, is a promising candidate for gas turbine engines to be used on smaller, regional aircraft. For this application, compressor/turbine disks must withstand temperatures of 1300 F for several hundred hours over the life of the engine. In this paper, three key properties of Alloy 10--tensile, 0.2% creep, and fatigue crack growth--will be assessed at 1300 F.

  1. Solar energy

    NASA Technical Reports Server (NTRS)

    Rapp, D.

    1981-01-01

    The book opens with a review of the patterns of energy use and resources in the United States, and an exploration of the potential of solar energy to supply some of this energy in the future. This is followed by background material on solar geometry, solar intensities, flat plate collectors, and economics. Detailed attention is then given to a variety of solar units and systems, including domestic hot water systems, space heating systems, solar-assisted heat pumps, intermediate temperature collectors, space heating/cooling systems, concentrating collectors for high temperatures, storage systems, and solar total energy systems. Finally, rights to solar access are discussed.

  2. Solar Systems

    NASA Technical Reports Server (NTRS)

    1979-01-01

    The solar collectors shown are elements of domestic solar hot water systems produced by Solar One Ltd., Virginia Beach, Virginia. Design of these systems benefited from technical expertise provided Solar One by NASA's Langley Research Center. The company obtained a NASA technical support package describing the d e sign and operation of solar heating equipment in NASA's Tech House, a demonstration project in which aerospace and commercial building technology are combined in an energy- efficient home. Solar One received further assistance through personal contact with Langley solar experts. The company reports that the technical information provided by NASA influenced Solar One's panel design, its selection of a long-life panel coating which increases solar collection efficiency, and the method adopted for protecting solar collectors from freezing conditions.

  3. Study on the thermal storage properties of Al-Si-Cu-Mg alloy

    NASA Astrophysics Data System (ADS)

    XIE, Yi; WAN, Ke-yang; XIE, Guo-sheng; HU, Jia-rui; YIN, Fu-cheng; GONG, Jing

    2017-04-01

    Based on thermodynamic calculation technology, the thermodynamic data of six alloys (inc. Al-Si and Al-Si-Cu-Mg systems) was calculated. The microstructure, phase transformation temperature and latent heat of the Al-4%Cu-12%Mg-7%Si alloy and Al-13%Si alloy were also verified by X-ray diffraction(XRD), scanning electron microscopy/Energy-dispersive system (SEM/EDS) and Differential scanning calorimetry (DSC). The results show that The enthalpy change value of Al-Si-Cu-Mg alloy is larger than that of Al-Si alloy from 800 °C to 400 °C, while its phase transformation temperature is lower. In particular, the enthalpy value of Al-4%Cu-12%Mg-7%Si alloy is 85% higher than that of Al-13%Si near eutectic alloy, and its initial temperature of phase transformation is about 74 °C lower. The former has relatively low phase transformation temperature and over-dimensioned latent heat of phase transformation, displaying the excellent thermal storage property. Therefore, the alloy is a good potential solar energy thermal storage material. The results in the paper also indicated that thermodynamic calculation is of value in seeking new potential solar energy thermal storage materials for solar thermal power generation system.

  4. Scanning tunneling microscopy studies of the surfaces of a-Si:H and a-SiGe:H films

    SciTech Connect

    Gallagher, A.; Ostrom, R.; Tannenbaum, D. )

    1991-06-01

    The report contains a detailed description of the experimental complexities encountered in developing scanning tunneling microscope (STM) probing of atomic structure on the surface of freshly-grown hydrogenated-amorphous semiconductors. It also contains a speculative microscopic film-growth model that explains differences between the disorder in CVD grown a-Ge:H versus a-Si:H films. This model is derived from prior results obtained in the chemical analysis of GeH{sub 4} plasmas, combined with surface reaction and thermodynamic considerations. The neutral radical fragments of silane, disilane and germane dissociation in discharges, which dominate the vapor and film-growth reactions, have been deduced from detailed analysis of prior data and are reported. 4 refs., 7 figs.

  5. Composition and bandgap-graded semiconductor alloy nanowires.

    PubMed

    Zhuang, Xiujuan; Ning, C Z; Pan, Anlian

    2012-01-03

    Semiconductor alloy nanowires with spatially graded compositions (and bandgaps) provide a new material platform for many new multifunctional optoelectronic devices, such as broadly tunable lasers, multispectral photodetectors, broad-band light emitting diodes (LEDs) and high-efficiency solar cells. In this review, we will summarize the recent progress on composition graded semiconductor alloy nanowires with bandgaps graded in a wide range. Depending on different growth methods and material systems, two typical nanowire composition grading approaches will be presented in detail, including composition graded alloy nanowires along a single substrate and those along single nanowires. Furthermore, selected examples of applications of these composition graded semiconductor nanowires will be presented and discussed, including tunable nanolasers, multi-terminal on-nanowire photodetectors, full-spectrum solar cells, and white-light LEDs. Finally, we will make some concluding remarks with future perspectives including opportunities and challenges in this research area.

  6. TJ Solar Cell

    SciTech Connect

    Friedman, Daniel

    2009-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  7. FTIR studies of hydrogen-related defects in dilute III-nitrogen-V alloys and crystalline silicon photovoltaics

    NASA Astrophysics Data System (ADS)

    Kleekajai, Suppawan

    In this dissertation, hydrogen-containing defects in two semiconducting material systems are studied: dilute III-N-V alloys (GaAsN and GaPN), and crystalline silicon. In both material systems, H has a significant effect on electronic properties. In dilute III-N-V alloys, there has been tremendous interest due to a large bandgap reduction caused by the introduction of N. Hydrogenation of these materials increases the band gap energy to near the value of the N-free host. A defect called H*2 (N) was proposed by many theorists to be the cause of band gap recovery in GaAsN and GaPN. We used vibrationa spectroscopy to investigated GaAsN and GaPN alloys into which H and/or D had been introduced. Our results show that the N-H complex in the III-N-V alloys contains two weakly-coupled N-H(D) stretching modes. This conclusion is inconsistent with the H*2 (N) defect. Later, a new model consisting of a canted NH2 complex in GaAsN was proposed. We performed an IR absorption study with uniaxial stress to investigate the symmetry of the NH2 complex. Our results showed that the NH2 complex has C2v symmetry or lower. This conclusion is consistent with the canted NH2 complex. H is introduced into Si solar cells to increase their efficiency. Two common ways of introducing H are by the post-deposition annealing of a SiN x-coating that acts as an anti-reflection coating and by H-plasma exposure. We have studied the hydrogenation mechanisms of crystalline Si by using infrared spectroscopy. For these experiments, floating-zone Si that contained Pt impurities that act as traps for H was used as a model system in which H could be directly detected. In this model system, the concentration and indiffusion depth of H were determined for different hydrogenation methods so that their effectiveness could be compared. The post-deposition annealing of a hydrogen-rich SiN x surface layer was found to introduce H into the Si bulk with a concentration of ˜1015 cm3 under the best conditions

  8. Surface alloying of Mg alloys after surface nanocrystallization.

    PubMed

    Zhang, Ming-Xing; Shi, Yi-Nong; Sun, Haiqing; Kelly, Patrick M

    2008-05-01

    Surface nanocrystallization using a surface mechanical attrition treatment effectively activates the surface of magnesium alloys due to the increase in grain boundary diffusion channels. As a result, the temperature of subsequent surface alloying treatment of pure Mg and AZ91 alloy can be reduced from 430 degrees C to 380 degrees C. Thus, it is possible to combine the surface alloying process with the solution treatment for this type of alloy. After surface alloying, the hardness of the alloyed layer is 3 to 4 times higher than that of the substrate and this may significantly improve the wear resistance of magnesium alloys.

  9. Catalyst Alloys Processing

    NASA Astrophysics Data System (ADS)

    Tan, Xincai

    2014-10-01

    Catalysts are one of the key materials used for diamond formation at high pressures. Several such catalyst products have been developed and applied in China and around the world. The catalyst alloy most widely used in China is Ni70Mn25Co5 developed at Changsha Research Institute of Mining and Metallurgy. In this article, detailed techniques for manufacturing such a typical catalyst alloy will be reviewed. The characteristics of the alloy will be described. Detailed processing of the alloy will be presented, including remelting and casting, hot rolling, annealing, surface treatment, cold rolling, blanking, finishing, packaging, and waste treatment. An example use of the catalyst alloy will also be given. Industrial experience shows that for the catalyst alloy products, a vacuum induction remelt furnace can be used for remelting, a metal mold can be used for casting, hot and cold rolling can be used for forming, and acid pickling can be used for metal surface cleaning.

  10. High efficiency solar cells combining a perovskite and a silicon heterojunction solar cells via an optical splitting system

    SciTech Connect

    Uzu, Hisashi E-mail: npark@skku.edu; Ichikawa, Mitsuru; Hino, Masashi; Nakano, Kunihiro; Meguro, Tomomi; Yamamoto, Kenji; Hernández, José Luis; Kim, Hui-Seon; Park, Nam-Gyu E-mail: npark@skku.edu

    2015-01-05

    We have applied an optical splitting system in order to achieve very high conversion efficiency for a full spectrum multi-junction solar cell. This system consists of multiple solar cells with different band gap optically coupled via an “optical splitter.” An optical splitter is a multi-layered beam splitter with very high reflection in the shorter-wave-length range and very high transmission in the longer-wave-length range. By splitting the incident solar spectrum and distributing it to each solar cell, the solar energy can be managed more efficiently. We have fabricated optical splitters and used them with a wide-gap amorphous silicon (a-Si) solar cell or a CH{sub 3}NH{sub 3}PbI{sub 3} perovskite solar cell as top cells, combined with mono-crystalline silicon heterojunction (HJ) solar cells as bottom cells. We have achieved with a 550 nm cutoff splitter an active area conversion efficiency of over 25% using a-Si and HJ solar cells and 28% using perovskite and HJ solar cells.

  11. Plasmonic effect of Ag nanoparticles in a SiON antireflective coating: engineering rules and physical barrier

    NASA Astrophysics Data System (ADS)

    Lecler, S.; Bastide, S.; Tan, J.; Qu, M.; Slaoui, A.; Fix, T.

    2016-10-01

    Surface plasmon polaritons have been proposed in the architectures of several solar cells as a way to enhance light collection and thus to increase their efficiency. Here, Ag nanoparticles (NPs) are embedded in a SiON antireflective layer using an electroless technique. The plasmonic effects are modeled and observed experimentally for NPs 5 to 200 nm in size. The systematic comparison of scattering and extinction efficiencies computed as a function of the NPs and surrounding medium properties allows establishing engineering rules, validated by the experimental measurements. The fact that Ag NPs larger than 30 nm mainly contribute to light scattering and therefore to optical path enlargement (green-red light), whereas those smaller than 15 nm absorb light by light trapping (blue-green), is demonstrated and physically explained. A physical barrier making it impossible to shift the dominant resonance beyond 650 nm is pointed out.

  12. High-rate RPECVD of a-Si:H films by means of a VHF resonant plasma source

    SciTech Connect

    Blum, T.; Suchaneck, G.; Kuske, J.; Stephan, U.; Kottwitz, A.; Beyer, W.

    1996-12-31

    Thin film polycrystalline silicon on large-area glass substrate is a promising material for low-cost high efficiency solar cells. High deposition rate (up to 5 nm/s) a-Si:H films suitable for recrystallization were deposited using a {lambda}/4 helical resonator source. Refractive index, Tauc-gap, photo- and dark conductivities were measured for film characterization. The metastable behavior was characterized by the light-induced degradation of the photoconductivity. Hydrogen content and bonding configuration were analyzed by IR absorption and mass separated thermal fusion transients, film microstructure was studied by intentionally incorporating carbon and oxygen. Most of the hydrogen is located on internal surfaces in the otherwise dense material. Differences between the deposition from the highly excited plasma and the conventional remote PECVD process are discussed.

  13. PLUTONIUM-ZIRCONIUM ALLOYS

    DOEpatents

    Schonfeld, F.W.; Waber, J.T.

    1960-08-30

    A series of nuclear reactor fuel alloys consisting of from about 5 to about 50 at.% zirconium (or higher zirconium alloys such as Zircaloy), balance plutonium, and having the structural composition of a plutonium are described. Zirconium is a satisfactory diluent because it alloys readily with plutonium and has desirable nuclear properties. Additional advantages are corrosion resistance, excellent fabrication propenties, an isotropie structure, and initial softness.

  14. Amorphous metal alloy

    DOEpatents

    Wang, R.; Merz, M.D.

    1980-04-09

    Amorphous metal alloys of the iron-chromium and nickel-chromium type have excellent corrosion resistance and high temperature stability and are suitable for use as a protective coating on less corrosion resistant substrates. The alloys are stabilized in the amorphous state by one or more elements of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten. The alloy is preferably prepared by sputter deposition.

  15. Low activation ferritic alloys

    DOEpatents

    Gelles, D.S.; Ghoniem, N.M.; Powell, R.W.

    1985-02-07

    Low activation ferritic alloys, specifically bainitic and martensitic stainless steels, are described for use in the production of structural components for nuclear fusion reactors. They are designed specifically to achieve low activation characteristics suitable for efficient waste disposal. The alloys essentially exclude molybdenum, nickel, nitrogen and niobium. Strength is achieved by substituting vanadium, tungsten, and/or tantalum in place of the usual molybdenum content in such alloys.

  16. Low activation ferritic alloys

    DOEpatents

    Gelles, David S.; Ghoniem, Nasr M.; Powell, Roger W.

    1986-01-01

    Low activation ferritic alloys, specifically bainitic and martensitic stainless steels, are described for use in the production of structural components for nuclear fusion reactors. They are designed specifically to achieve low activation characteristics suitable for efficient waste disposal. The alloys essentially exclude molybdenum, nickel, nitrogen and niobium. Strength is achieved by substituting vanadium, tungsten, and/or tantalum in place of the usual molybdenum content in such alloys.

  17. Results of a Si/Cdte Compton Telescope

    SciTech Connect

    Oonuki, Kousuke; Tanaka, Takaaki; Watanabe, Shin; Takeda, Shin'ichiro; Nakazawa, Kazuhiro; Mitani, Takefumi; Takahashi, Tadayuki; Tajima, Hiroyasu; Fukazawa, Yasushi; Nomachi, Masaharu; /Sagamihara, Inst. Space Astron. Sci. /Tokyo U. /SLAC /Hiroshima U. /Osaka U.

    2005-09-23

    We have been developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. We use a Si strip and CdTe pixel detector for the Compton telescope to cover an energy range from 60 keV. For energies above several hundred keV, the higher efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as an absorber and a scatterer. In order to demonstrate the spectral and imaging capability of a CdTe-based Compton Telescope, we have developed a Compton telescope consisting of a stack of CdTe pixel detectors as a small scale prototype. With this prototype, we succeeded in reconstructing images and spectra by solving the Compton equation from 122 keV to 662 keV. The energy resolution (FWHM) of reconstructed spectra is 7.3 keV at 511 keV and 3.1 keV at 122 keV, respectively. The angular resolution obtained at 511 keV is measured to be 12.2{sup o}(FWHM).

  18. NICKEL-BASE ALLOY

    DOEpatents

    Inouye, H.; Manly, W.D.; Roche, T.K.

    1960-01-19

    A nickel-base alloy was developed which is particularly useful for the containment of molten fluoride salts in reactors. The alloy is resistant to both salt corrosion and oxidation and may be used at temperatures as high as 1800 deg F. Basically, the alloy consists of 15 to 22 wt.% molybdenum, a small amount of carbon, and 6 to 8 wt.% chromium, the balance being nickel. Up to 4 wt.% of tungsten, tantalum, vanadium, or niobium may be added to strengthen the alloy.

  19. Supersaturated Aluminum Alloy Powders.

    DTIC Science & Technology

    1981-07-15

    shown in Fig. 18 . It .an be clearly seen that most of the iron is concentrated in the precipitates (Fig. 18 ), X-ray mapping immage for the chromium...At 232°C our alloys are comparable to 2� and 2618 in their tensile properties, and except for alloy #1 which at t i temperature has elongation of...demonstrate better yield strength and UTS than the 2219, 2618 and are comparable to the ALCOA alloy. They show however higher ductility than the ALCOA alloy

  20. Solar Collectors

    NASA Technical Reports Server (NTRS)

    1980-01-01

    Solar Energy's solar panels are collectors for a solar energy system which provides heating for a drive-in bank in Akron, OH. Collectors were designed and manufactured by Solar Energy Products, a firm established by three former NASA employees. Company President, Frank Rom, an example of a personnel-type technology transfer, was a Research Director at Lewis Research Center, which conducts extensive solar heating and cooling research, including development and testing of high-efficiency flat-plate collectors. Rom acquired solar energy expertise which helped the company develop two types of collectors, one for use in domestic/commercial heating systems and the other for drying grain.

  1. Very fast light-induced degradation of a-Si:H/c-Si(100) interfaces

    NASA Astrophysics Data System (ADS)

    de Wolf, Stefaan; Demaurex, Bénédicte; Descoeudres, Antoine; Ballif, Christophe

    2011-06-01

    Light-induced degradation (LID) of crystalline silicon (c-Si) surfaces passivated with hydrogenated amorphous silicon (a-Si:H) is investigated. The initial passivation decays on polished c-Si(100) surfaces on a time scale much faster than usually associated with bulk a-Si:H LID. This phenomenon is absent for the a-Si:H/c-Si(111) interface. We attribute these differences to the allowed reconstructions on the respective surfaces. This may point to a link between the presence of so-called “fast” states and (internal) surface reconstruction in bulk a-Si:H.

  2. Enhanced electrical characteristics of a-Si thin films by hydrogen passivation with Nd3+:YAG laser treatment in underwater for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Vidhya, Y. Esther Blesso; Vasa, Nilesh J.

    2017-08-01

    Post deposition underwater treatment with a nanosecond Nd3+:YAG laser is proposed and demonstrated for the passivation of electrical defects in 400-1000 nm-thick a-Si thin films needed for solar cells. The proposed pulsed laser beam-overlap technique also allows simultaneous annealing and texturing. Atomic hydrogen, oxygen, and hydroxyl radicals activated by the breakdown of water by laser heating passivate the dangling bonds in the crystal grains, improving the solar cell performance. The presence of hydrogen observed after water annealing using X-ray photo electron spectroscopy (XPS), Raman spectroscopy, and attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR) shows that the passivation improvement is caused by diffusion of atomic hydrogen. After underwater annealing, relative improvement in the life time of minority carriers was measured to be approximately 13% and the efficiency of n-aSi/p-cSi solar cells is found to be increased ( 2 to 3%) when compared to that in air.

  3. Design and Modeling of Graded Bandgap Amorphous Silicon-Germanium Solar Cells Fabricated by Plasma Enhanced Chemical Vapor Deposition. Ph.D. Thesis

    SciTech Connect

    Baldwin, G.C.

    1994-01-01

    Graded bandgap p-i-n diode solar cells are fabricated with a(Si,Ge):H deposited by triode PECVD. These cells are optimized for low energy photon absorption, and are suitable for the bottom cell of a tandem cell structure. Initially, a series of a-(Si,Ge):H films with a wide range of germanium contents were grown to determine the alloyed material quality. The techniques used to characterize the material include electrical and optical measurements, as well as EDS, TEM and SEM analysis. Reproducibly high quality films were deposited using low chamber pressures (approx. 20m Torr), high levels of hydrogen dilution, substrate temperatures around 300 deg. C, and a negative substrate bias. The variation in material characteristics with germanium content is reported including dark- and photoconductivity, subgap absorption, Tauc gap and activation energy. A series of constant bandgap devices were also fabricated to determine the hole transport parameters, as well as the Urbach energy. A new computer model for the internal electric fields is used to analyze the device results. The model determines the quantum efficiency from the internal electric field profile and the hole transport parameters. The hole mobility lifetime product (mu tau) has not been well characterized in a-(Si,Ge):H, and is quantified for the first time here using the computer model. The quantum efficiency values are accurately modeled by adjusting three parameters: the interface electric field, the p-layer absorption and the hole mu tau product. Once the hole mu tau product was determined for various levels of germanium content in the i-layer, an exponential relationship between the Urbach energy and mu tau was found. This relationship is most likely due to the dispersive transport of holes in the valence band, and provides researchers with a new tool for determining the mu tau product. The model was also used to guide the design of the optimized graded bandgap devices.

  4. Corrosion resistance and cytocompatibility of biodegradable surgical magnesium alloy coated with hydrogenated amorphous silicon.

    PubMed

    Xin, Yunchang; Jiang, Jiang; Huo, Kaifu; Tang, Guoyi; Tian, Xiubo; Chu, Paul K

    2009-06-01

    The fast degradation rates in the physiological environment constitute the main limitation for the applications of surgical magnesium alloys as biodegradable hard-tissue implants. In this work, a stable and dense hydrogenated amorphous silicon coating (a-Si:H) with desirable bioactivity is deposited on AZ91 magnesium alloy using magnetron sputtering deposition. Raman spectroscopy and Fourier transform infrared spectroscopy reveal that the coating is mainly composed of hydrogenated amorphous silicon. The hardness of the coated alloy is enhanced significantly and the coating is quite hydrophilic as well. Potentiodynamic polarization results show that the corrosion resistance of the coated alloy is enhanced dramatically. In addition, the deterioration process of the coating in simulated body fluids is systematically investigated by open circuit potential evolution and electrochemical impedance spectroscopy. The cytocompatibility of the coated Mg is evaluated for the first time using hFOB1.19 cells and favorable biocompatibility is observed.

  5. Hot-Wire CVD Amorphous Si Materials for Solar Cell Application

    SciTech Connect

    Wang, Q.

    2009-01-01

    Hydrogenated amorphous silicon (a-Si:H) thin films and their application to solar cells fabricated using the hot-wire chemical vapor deposition (HWCVD) or (CAT)-CVD will be reviewed. This review will focus on the comparison to the standard plasma enhance (PE) CVD in the terms of deposition technique, film properties, and solar cell performance. The advantages of using HWCVD for a-Si:H solar cell research as well as the criteria for industry's adaptation of this technique for mass production will be addressed.

  6. Development of radiation detectors based on hydrogenated amorphous silicon and its alloys

    SciTech Connect

    Hong, Wan-Shick

    1995-04-01

    Hydrogenated amorphous silicon and related materials have been applied to radiation detectors, utilizing their good radiation resistance and the feasibility of making deposits over a large area at low cost. Effects of deposition parameters on various material properties of a-Si:H have been studied to produce a material satisfying the requirements for specific detection application. Thick(-~50 μm), device quality a-Si:H p-i-n diodes for direct detection of minimum ionizing particles have been prepared with low internal stress by a combination of low temperature growth, He-dilution of silane, and post annealing. The structure of the new film contained voids and tiny crystalline inclusions and was different from the one observed in conventional a-Si:H. Deposition on patterned substrates was attempted as an alternative to controlling deposition parameters to minimize substrate bending and delamination of thick a-Si:H films. Growth on an inversed-pyramid pattern reduced the substrate bending by a factor of 3 ≈ 4 for the same thickness film. Thin (0.1 ≈ 0.2 μm) films of a-Si:H and a-SiC:H have been applied to microstrip gas chambers to control gain instabilities due to charges on the substrate. Light sensitivity of the a-Si:H sheet resistance was minimized and the surface resistivity was successfully` controlled in the range of 1012 ≈ 1017 Ω/(four gradient) by carbon alloying and boron doping. Performance of the detectors with boron-doped a-Si:C:H layers was comparable to that of electronic-conducting glass. Hydrogen dilution of silane has been explored to improve electrical transport properties of a-Si:H material for high speed photo-detectors and TFT applications.

  7. Solar Thermal Reactor Materials Characterization

    SciTech Connect

    Lichty, P. R.; Scott, A. M.; Perkins, C. M.; Bingham, C.; Weimer, A. W.

    2008-03-01

    Current research into hydrogen production through high temperature metal oxide water splitting cycles has created a need for robust high temperature materials. Such cycles are further enhanced by the use of concentrated solar energy as a power source. However, samples subjected to concentrated solar radiation exhibited lifetimes much shorter than expected. Characterization of the power and flux distributions representative of the High Flux Solar Furnace(HFSF) at the National Renewable Energy Laboratory(NREL) were compared to ray trace modeling of the facility. In addition, samples of candidate reactor materials were thermally cycled at the HFSF and tensile failure testing was performed to quantify material degradation. Thermal cycling tests have been completed on super alloy Haynes 214 samples and results indicate that maximum temperature plays a significant role in reduction of strength. The number of cycles was too small to establish long term failure trends for this material due to the high ductility of the material.

  8. Solar collectors

    SciTech Connect

    Cassidy, V.M.

    1981-11-01

    Practical applications of solar energy in commercial, industrial and institutional buildings are considered. Two main types of solar collectors are described: flat plate collectors and concentrating collectors. Efficiency of air and hydronic collectors among the flat plate types are compared. Also several concentrators are described, including their sun tracking mechanisms. Descriptions of some recent solar installations are presented and a list representing the cross section of solar collector manufacturers is furnished.

  9. Solar holography

    NASA Astrophysics Data System (ADS)

    Ludman, Jacques E.; Riccobono, Juanita R.; Caulfield, H. John; Upton, Timothy D.

    2002-07-01

    A solar photovoltaic energy collection system using a reflection hologram is described herein. The system uses a single-axis tracking system in conjunction with a spectral- splitting holographic element. The hologram accurately focuses the desired regions of the solar spectrum to match the bandgaps of two ro more different solar cells, while diverting unused IR wavelengths away. Other applications for solar holography include daylighting and greenhouses.

  10. Modern Sparingly Alloyed Titanium Alloys: Application and Prospects

    NASA Astrophysics Data System (ADS)

    Nochovnaya, N. A.; Panin, P. V.; Alekseev, E. B.; Bokov, K. A.

    2017-01-01

    Comparative analysis of the properties of domestic and foreign sparingly alloyed titanium alloys is preformed, and the main tendencies and prospects of their development are considered. Recent works of FGUP "VIAM" in the field of creation and approbation of various-purpose low-alloy titanium alloys are reviewed.

  11. Solar reflector

    SciTech Connect

    Stone, D. C.

    1981-02-17

    A solar reflector having a flexible triangular reflective sheet or membrane for receiving and reflecting solar energy therefrom. The reflector is characterized by the triangular reflective sheet which is placed under tension thereby defining a smooth planar surface eliminating surface deflection which heretofore has reduced the efficiency of reflectors or heliostats used in combination for receiving and transmitting solar energy to an absorber tower.

  12. Solar Equipment

    NASA Astrophysics Data System (ADS)

    1983-01-01

    A medical refrigeration and a water pump both powered by solar cells that convert sunlight directly into electricity are among the line of solar powered equipment manufactured by IUS (Independent Utility Systems) for use in areas where conventional power is not available. IUS benefited from NASA technology incorporated in the solar panel design and from assistance provided by Kerr Industrial Applications Center.

  13. Buying Solar.

    ERIC Educational Resources Information Center

    Dawson, Joe

    Presented are guidelines for buying solar systems for the individual consumer. This is intended to help the consumer reduce many of the risks associated with the purchase of solar systems, particularly the risks of fraud and deception. Engineering terms associated with solar technology are presented and described to enable the consumer to discuss…

  14. Solar Equipment

    NASA Technical Reports Server (NTRS)

    1983-01-01

    A medical refrigeration and a water pump both powered by solar cells that convert sunlight directly into electricity are among the line of solar powered equipment manufactured by IUS (Independent Utility Systems) for use in areas where conventional power is not available. IUS benefited from NASA technology incorporated in the solar panel design and from assistance provided by Kerr Industrial Applications Center.

  15. Cesium iodide alloys

    DOEpatents

    Kim, H.E.; Moorhead, A.J.

    1992-12-15

    A transparent, strong CsI alloy is described having additions of monovalent iodides. Although the preferred iodide is AgI, RbI and CuI additions also contribute to an improved polycrystalline CsI alloy with outstanding multispectral infrared transmittance properties. 6 figs.

  16. Neutron Absorbing Alloys

    SciTech Connect

    Mizia, Ronald E.; Shaber, Eric L.; DuPont, John N.; Robino, Charles V.; Williams, David B.

    2004-05-04

    The present invention is drawn to new classes of advanced neutron absorbing structural materials for use in spent nuclear fuel applications requiring structural strength, weldability, and long term corrosion resistance. Particularly, an austenitic stainless steel alloy containing gadolinium and less than 5% of a ferrite content is disclosed. Additionally, a nickel-based alloy containing gadolinium and greater than 50% nickel is also disclosed.

  17. Copper-tantalum alloy

    DOEpatents

    Schmidt, Frederick A.; Verhoeven, John D.; Gibson, Edwin D.

    1986-07-15

    A tantalum-copper alloy can be made by preparing a consumable electrode consisting of an elongated copper billet containing at least two spaced apart tantalum rods extending longitudinally the length of the billet. The electrode is placed in a dc arc furnace and melted under conditions which co-melt the copper and tantalum to form the alloy.

  18. Ductile transplutonium metal alloys

    DOEpatents

    Conner, William V.

    1983-01-01

    Alloys of Ce with transplutonium metals such as Am, Cm, Bk and Cf have properties making them highly suitable as sources of the transplutonium element, e.g., for use in radiation detector technology or as radiation sources. The alloys are ductile, homogeneous, easy to prepare and have a fairly high density.

  19. Ductile transplutonium metal alloys

    DOEpatents

    Conner, W.V.

    1981-10-09

    Alloys of Ce with transplutonium metals such as Am, Cm, Bk and Cf have properties making them highly suitable as souces of the transplutonium element, e.g., for use in radiation detector technology or as radiation sources. The alloys are ductile, homogeneous, easy to prepare and have a fairly high density.

  20. Aluminum battery alloys

    DOEpatents

    Thompson, D.S.; Scott, D.H.

    1984-09-28

    Aluminum alloys suitable for use as anode structures in electrochemical cells are disclosed. These alloys include iron levels higher than previously felt possible, due to the presence of controlled amounts of manganese, with possible additions of magnesium and controlled amounts of gallium.

  1. Aluminum battery alloys

    DOEpatents

    Thompson, David S.; Scott, Darwin H.

    1985-01-01

    Aluminum alloys suitable for use as anode structures in electrochemical cs are disclosed. These alloys include iron levels higher than previously felt possible, due to the presence of controlled amounts of manganese, with possible additions of magnesium and controlled amounts of gallium.

  2. PLUTONIUM-CERIUM ALLOY

    DOEpatents

    Coffinberry, A.S.

    1959-01-01

    An alloy is presented for use as a reactor fuel. The binary alloy consists essentially of from about 5 to 90 atomic per cent cerium and the balance being plutonium. A complete phase diagram for the cerium--plutonium system is given.

  3. Ductile transplutonium metal alloys

    SciTech Connect

    Conner, W.V.

    1983-04-19

    Alloys of Ce with transplutonium metals such as Am, Cm, Bk and Cf have properties making them highly suitable as sources of the transplutonium element, e.g., for use in radiation detector technology or as radiation sources. The alloys are ductile, homogeneous, easy to prepare and have a fairly high density.

  4. Testing of a new solar coating for solar water heating applications

    SciTech Connect

    AlShamaileh, Ehab

    2010-09-15

    A novel and affordable solar selective coating exhibiting higher solar absorption efficiency compared to the commercial black paint coating used in most ordinary solar water heating systems (SWHSs) has been developed. The coating is fabricated by embedding a metallic particle composed of a nickel-aluminium (NiAl) alloy into the black paint. The optical behaviour of several percentages of the NiAl alloy in the coating is studied using UV-Vis and IR spectroscopies. The chemical composition of the coating was characterized using XRD and thermo-gravimetric analysis (TGA) for both the black and alloy-containing paint. The results allowed deducing that the optimum composition to consider for further testing was 6% NiAl alloy by mass. The applicability of the coating in a real thermosyphonic SWHS was evaluated throughout the year, spanning both hot and cold seasons. It is found that the new coating shows better performance compared to the untreated black paint by an average of 5 C over a period of 1 year. The corrosion resistance of the coating was investigated using electrochemical polarization and weight-loss measurements in the corrosive medium of 3% NaCl in 0.50 M HCl. Higher inhibition efficiency of corrosion was found for the alloy-containing paint compared to the untreated paint by more than 12%. Finally, Scanning Electron Microscopy (SEM) was used to explore the morphology of the modified coating surface, and compared to the untreated surface. (author)

  5. Light-induced performance increase of silicon heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Kobayashi, Eiji; De Wolf, Stefaan; Levrat, Jacques; Christmann, Gabriel; Descoeudres, Antoine; Nicolay, Sylvain; Despeisse, Matthieu; Watabe, Yoshimi; Ballif, Christophe

    2016-10-01

    Silicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either due to light soaking or (dark) forward-voltage bias increases the open circuit voltage and fill factor of finished cells, leading to a conversion efficiency gain of up to 0.3% absolute. This phenomenon contrasts markedly with the light-induced degradation known for thin-film a-Si:H solar cells. We associate our performance gain with an increase in surface passivation, which we find is specific to doped a-Si:H/c-Si structures. Our experiments suggest that this improvement originates from a reduced density of recombination-active interface states. To understand the time dependence of the observed phenomena, a kinetic model is presented.

  6. Ultrahigh temperature intermetallic alloys

    SciTech Connect

    Brady, M.P.; Zhu, J.H.; Liu, C.T.; Tortorelli, P.F.; Wright, J.L.; Carmichael, C.A.; Walker, L.R.

    1997-12-01

    A new family of Cr-Cr{sub 2}X based alloys with fabricability, mechanical properties, and oxidation resistance superior to previously developed Cr-Cr{sub 2}Nb and Cr-Cr{sub 2}Zr based alloys has been identified. The new alloys can be arc-melted/cast without cracking, and exhibit excellent room temperature and high-temperature tensile strengths. Preliminary evaluation of oxidation behavior at 1100 C in air indicates that the new Cr-Cr{sub 2}X based alloys form an adherent chromia-based scale. Under similar conditions, Cr-Cr{sub 2}Nb and Cr-Cr{sub 2}Zr based alloys suffer from extensive scale spallation.

  7. Alloys in energy development

    SciTech Connect

    Frost, B.R.T.

    1984-02-01

    The development of new and advanced energy systems often requires the tailoring of new alloys or alloy combinations to meet the novel and often stringent requirements of those systems. Longer life at higher temperatures and stresses in aggressive environments is the most common goal. Alloy theory helps in achieving this goal by suggesting uses of multiphase systems and intermediate phases, where solid solutions were traditionally used. However, the use of materials under non-equilibrium conditions is now quite common - as with rapidly solidified metals - and the application of alloy theory must be modified accordingly. Under certain conditions, as in a reactor core, the rate of approach to equilibrium will be modified; sometimes a quasi-equilibrium is established. Thus an alloy may exhibit enhanced general diffusion at the same time as precipitate particles are being dispersed and solute atoms are being carried to vacancy sinks. We are approaching an understanding of these processes and can begin to model these complex systems.

  8. Synthesis and characterization of (Sn,Zn)O alloys

    SciTech Connect

    Bikowski, Andre; Holder, Aaron; Peng, Haowei; Siol, Sebastian; Norman, Andrew; Lany, Stephan; Zakutayev, Andriy

    2016-09-29

    SnO exhibits electrical properties that render it promising for solar energy conversion applications, but it also has a strongly indirect band gap. Recent theoretical calculations predict that this disadvantage can be mitigated by isovalent alloying with other group-II oxides such as ZnO. Here, we synthesized new metastable isovalent (Sn,Zn)O alloy thin films by combinatorial reactive co-sputtering and characterized their structural, optical and electrical properties. The alloying of ZnO into SnO leads to a change of the valence state of the tin from Sn0 via Sn2+ to Sn4+, which can be counteracted by reducing the oxygen partial pressure during the deposition. The optical characterization of the smooth <10 at. % Sn1-xZnxO thin films showed an increase in the absorption coefficient in the range from 1 to 2 eV, which is consistent with the theoretical predictions for the isovalent alloying. However, the experimentally observed alloying effect may be convoluted with the effect of local variations of the Sn oxidation state. As a result, this effect would have to be minimized to improve the (Sn,Zn)O optical and electrical properties for their use as absorbers in solar energy conversion applications.

  9. Synthesis and characterization of (Sn,Zn)O alloys

    DOE PAGES

    Bikowski, Andre; Holder, Aaron; Peng, Haowei; ...

    2016-09-29

    SnO exhibits electrical properties that render it promising for solar energy conversion applications, but it also has a strongly indirect band gap. Recent theoretical calculations predict that this disadvantage can be mitigated by isovalent alloying with other group-II oxides such as ZnO. Here, we synthesized new metastable isovalent (Sn,Zn)O alloy thin films by combinatorial reactive co-sputtering and characterized their structural, optical and electrical properties. The alloying of ZnO into SnO leads to a change of the valence state of the tin from Sn0 via Sn2+ to Sn4+, which can be counteracted by reducing the oxygen partial pressure during the deposition.more » The optical characterization of the smooth <10 at. % Sn1-xZnxO thin films showed an increase in the absorption coefficient in the range from 1 to 2 eV, which is consistent with the theoretical predictions for the isovalent alloying. However, the experimentally observed alloying effect may be convoluted with the effect of local variations of the Sn oxidation state. As a result, this effect would have to be minimized to improve the (Sn,Zn)O optical and electrical properties for their use as absorbers in solar energy conversion applications.« less

  10. Synthesis and characterization of (Sn,Zn)O alloys

    SciTech Connect

    Bikowski, Andre; Holder, Aaron; Peng, Haowei; Siol, Sebastian; Norman, Andrew; Lany, Stephan; Zakutayev, Andriy

    2016-09-29

    SnO exhibits electrical properties that render it promising for solar energy conversion applications, but it also has a strongly indirect band gap. Recent theoretical calculations predict that this disadvantage can be mitigated by isovalent alloying with other group-II oxides such as ZnO. Here, we synthesized new metastable isovalent (Sn,Zn)O alloy thin films by combinatorial reactive co-sputtering and characterized their structural, optical and electrical properties. The alloying of ZnO into SnO leads to a change of the valence state of the tin from Sn0 via Sn2+ to Sn4+, which can be counteracted by reducing the oxygen partial pressure during the deposition. The optical characterization of the smooth <10 at. % Sn1-xZnxO thin films showed an increase in the absorption coefficient in the range from 1 to 2 eV, which is consistent with the theoretical predictions for the isovalent alloying. However, the experimentally observed alloying effect may be convoluted with the effect of local variations of the Sn oxidation state. As a result, this effect would have to be minimized to improve the (Sn,Zn)O optical and electrical properties for their use as absorbers in solar energy conversion applications.

  11. Monolithic cascade-type solar cells

    NASA Technical Reports Server (NTRS)

    Yamamoto, S.; Shibukawa, A.; Yamaguchi, M.

    1985-01-01

    Solar cells consist of a semiconductor base, a bottom cell with a band-gap energy of E1, and a top cell with a band-gap energy of E2, and 0.96 E1 1.36 eV and (0.80 E + 0.77) eV E2 (0.80 E1 + 0.92) eV. A monolithic cascade-type solar cell was prepared with an n(+)-type GaAs base, a GaInAs bottom solar cell, and a GaAiInAs top solar cell. The surface of the cell is coated with a SiO antireflection film. The efficiency of the cell is 32%.

  12. Cassegrainian concentrator solar array exploratory development module

    NASA Technical Reports Server (NTRS)

    Patterson, R. E.; Crabtree, W. L.

    1982-01-01

    A miniaturized Cassegrainian concentrator solar array concept is under development to reduce the cost of multi-kW spacecraft solar arrays. A primary parabolic reflector directs incoming solar energy to a secondary, centrally mounted inverted hyperbolic reflector and down onto a solar cell mounted on an Mo heat spreader on a 0.25 mm thick Al heat fin. Each unit is 12.7 mm thick, which makes the concentrator assembly roughly as thick as a conventional panel. The output is 100 W/sq and 20 W/kg, considering 20% efficient Si cells at 100 suns. A tertiary light catcher is mounted around the cell to ameliorate optic errors. The primary reflector is electroformed Ni with protective and reflective coatings. The cells have back surface reflectors and a SiO antireflective coating. An optical efficiency of 80% is projected, and GaAs cells are being considered in an attempt to raise cell efficiencies to over 30%.

  13. Solar Meter

    NASA Technical Reports Server (NTRS)

    1978-01-01

    The instrument pictured is an inexpensive solar meter which is finding wide acceptance among architects, engineers and others engaged in construction of solar energy facilities. It detects the amount of solar energy available at a building site, information necessary to design the most efficient type of solar system for a particular location. Incorporating technology developed by NASA's Lewis Research Center, the device is based upon the solar cell, which provides power for spacecraft by converting the sun's energy to electricity. The meter is produced by Dodge Products, Inc., Houston, Texas, a company formed to bring the technology to the commercial marketplace.

  14. Solar flair.

    PubMed Central

    Manuel, John S

    2003-01-01

    Design innovations and government-sponsored financial incentives are making solar energy increasingly attractive to homeowners and institutional customers such as school districts. In particular, the passive solar design concept of daylighting is gaining favor among educators due to evidence of improved performance by students working in daylit classrooms. Electricity-generating photovoltaic systems are also becoming more popular, especially in states such as California that have high electric rates and frequent power shortages. To help spread the word about solar power, the U.S. Department of Energy staged its first-ever Solar Decathlon in October 2002. This event featured solar-savvy homes designed by 14 college teams. PMID:12573926

  15. Solar flair.

    PubMed

    Manuel, John S

    2003-02-01

    Design innovations and government-sponsored financial incentives are making solar energy increasingly attractive to homeowners and institutional customers such as school districts. In particular, the passive solar design concept of daylighting is gaining favor among educators due to evidence of improved performance by students working in daylit classrooms. Electricity-generating photovoltaic systems are also becoming more popular, especially in states such as California that have high electric rates and frequent power shortages. To help spread the word about solar power, the U.S. Department of Energy staged its first-ever Solar Decathlon in October 2002. This event featured solar-savvy homes designed by 14 college teams.

  16. Study of the possibility of using solar radiant energy for welding and brazing metals

    NASA Technical Reports Server (NTRS)

    Dvernyakov, V. S.; Frantsevich, I. N.; Pasichnyy, V. V.; Shiganov, N. A.; Korunov, Y. I.; Kasich-Pilipenko, I. Y.

    1974-01-01

    The solar spectrum at the surface of the earth is analyzed. A facility for creating concentrated solar radiant energy flux is described, and data on its energetic capabilities are presented. The technology of solar welding by the fusion technique and joining by high-temperature brazing is examined. The use of concentrated solar radiant energy for welding and brazing metals and alloys is shown. The results of mechanical tests and microscopic and macroscopic studies are presented.

  17. Copper containing solar cells: Production and efficiency. (Latest citations from the Aerospace database). Published Search

    SciTech Connect

    Not Available

    1993-12-01

    The bibliography contains citations concerning solar cells that contain copper and copper alloys. Production techniques used to improve solar cell efficiency are described. The citations also review thin film solar cells and examine the causes and rates of degradation in copper containing solar cells. Theoretical and experimental studies are included. (Contains a minimum of 232 citations and includes a subject term index and title list.)

  18. Study of the possibility of using solar radiant energy for welding and brazing metals

    NASA Technical Reports Server (NTRS)

    Dvernyakov, V. S.; Frantsevich, I. N.; Pasichnyy, V. V.; Shiganov, N. A.; Korunov, Y. I.; Kasich-Pilipenko, I. Y.

    1974-01-01

    The solar spectrum at the surface of the earth is analyzed. A facility for creating concentrated solar radiant energy flux is described, and data on its energetic capabilities are presented. The technology of solar welding by the fusion technique and joining by high-temperature brazing is examined. The use of concentrated solar radiant energy for welding and brazing metals and alloys is shown. The results of mechanical tests and microscopic and macroscopic studies are presented.

  19. Silicon germanium semiconductive alloy and method of fabricating same

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor)

    2008-01-01

    A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al.sub.2O.sub.3. A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001} C-plane such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,-1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium.

  20. Comparative life-cycle energy payback analysis of multi-junction a-SiGe and nanocrystalline/a-Si modules

    SciTech Connect

    Fthenakis, V.; Kim, H.

    2010-07-15

    Despite the publicity of nanotechnologies in high tech industries including the photovoltaic sector, their life-cycle energy use and related environmental impacts are understood only to a limited degree as their production is mostly immature. We investigated the life-cycle energy implications of amorphous silicon (a-Si) PV designs using a nanocrystalline silicon (nc-Si) bottom layer in the context of a comparative, prospective life-cycle analysis framework. Three R and D options using nc-Si bottom layer were evaluated and compared to the current triple-junction a-Si design, i.e., a-Si/a-SiGe/a-SiGe. The life-cycle energy demand to deposit nc-Si was estimated from parametric analyses of film thickness, deposition rate, precursor gas usage, and power for generating gas plasma. We found that extended deposition time and increased gas usages associated to the relatively high thickness of nc-Si lead to a larger primary energy demand for the nc-Si bottom layer designs, than the current triple-junction a-Si. Assuming an 8% conversion efficiency, the energy payback time of those R and D designs will be 0.7-0.9 years, close to that of currently commercial triple-junction a-Si design, 0.8 years. Future scenario analyses show that if nc-Si film is deposited at a higher rate (i.e., 2-3 nm/s), and at the same time the conversion efficiency reaches 10%, the energy-payback time could drop by 30%.

  1. Effect of Deposition Conditions on Intrinsic Stress in a-Si: H Films

    NASA Astrophysics Data System (ADS)

    Ozawa, Kiyoshi; Takagi, Nobuyoshi; Asama, Kunihiko

    1983-05-01

    Intrinsic stress in the a-Si: H film, which reflects the internal microstructure of the film under deposition and thus gives the information about the construction of amorphous network, has been evaluated by the Baser interferometric method. The intrinsic stress induced in the a-Si: H film is compressive and increases with the deposition temperature. As the intrinsic compressive stress is increased, decreases are observed in the deposition rate, the total hydrogen concentration, and the ratio of hydrogen concentration with the configuration SiH2, SiH3, and (SiH2)n to that with SiH. These results on the temperature dependence of a-Si: H film growth indicate that the contribution of excited species in the plasma to the growth of the a-Si: H is restricted by the intrinsic compressive stress induced in the a-Si: H through differences in molecular dimensions of the excited species.

  2. Solar Energy: Solar System Economics.

    ERIC Educational Resources Information Center

    Knapp, Henry H., III

    This module on solar system economics is one of six in a series intended for use as supplements to currently available materials on solar energy and energy conservation. Together with the recommended texts and references (sources are identified), these modules provide an effective introduction to energy conservation and solar energy technologies.…

  3. Solar Energy: Solar System Economics.

    ERIC Educational Resources Information Center

    Knapp, Henry H., III

    This module on solar system economics is one of six in a series intended for use as supplements to currently available materials on solar energy and energy conservation. Together with the recommended texts and references (sources are identified), these modules provide an effective introduction to energy conservation and solar energy technologies.…

  4. Solar Sailing

    NASA Technical Reports Server (NTRS)

    Johnson, Les

    2009-01-01

    Solar sailing is a topic of growing technical and popular interest. Solar sail propulsion will make space exploration more affordable and offer access to destinations within (and beyond) the solar system that are currently beyond our technical reach. The lecture will describe solar sails, how they work, and what they will be used for in the exploration of space. It will include a discussion of current plans for solar sails and how advanced technology, such as nanotechnology, might enhance their performance. Much has been accomplished recently to make solar sail technology very close to becoming an engineering reality and it will soon be used by the world s space agencies in the exploration of the solar system and beyond. The first part of the lecture will summarize state-of-the-art space propulsion systems and technologies. Though these other technologies are the key to any deep space exploration by humans, robots, or both, solar-sail propulsion will make space exploration more affordable and offer access to distant and difficult destinations. The second part of the lecture will describe the fundamentals of space solar sail propulsion and will describe the near-, mid- and far-term missions that might use solar sails as a propulsion system. The third part of the lecture will describe solar sail technology and the construction of current and future sailcraft, including the work of both government and private space organizations.

  5. Tunneling Spectroscopy of Amorphous Magnetic Rare Earth-Si Alloys near the Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Xiong, P.; Zink, B. L.; Tran, M. Q.; Gebala, A. E.; Wilcox, E. M.; Hellman, F.; Dynes, R. C.

    1997-03-01

    Amorphous dilute magnetic semiconductors exhibit striking differences in the electrical and magneto-transport behavior from their crystalline or nonmagnetic analogs.(F. Hellman et al., Phys. Rev. Lett. 77, 4652 (1996).) Magnetic impurities cause a large suppression of conductivity below 50 K in a-Si_xGd_1-x and a-Si_xTb_1-x relative to the nonmagnetic a-Si_xY_1-x (x ~ 0.85-0.9). Application of a magnetic field increases the conductivity by orders of magnitude. We have fabricated good quality tunnel junctions on a-Si:Gd and the nonmagnetic a-Si:Y to probe the electronic density of states in these two systems. We present the results of the tunneling spectroscopy and its magnetic field dependence for a series of the two alloys at different compositions. We will discuss the correlation between the tunneling spectra and the transport properties and its implications on the possible origin of the magnetic field tuned insulator-metal transition in a-Si:Gd. Research Supported by ONR Grant No. N000149151320 and NSF Grant No. DMR-9208599.

  6. THORIUM-SILICON-BERYLLIUM ALLOYS

    DOEpatents

    Foote, F.G.

    1959-02-10

    Th, Si, anol Bt alloys where Be and Si are each present in anmounts between 0.1 and 3.5% by weight and the total weight per cent of the minor alloying elements is between 1.5 and 4.5% are discussed. These ternary alloys show increased hardness and greater resistant to aqueous corrosion than is found in pure Th, Th-Si alloys, or Th-Be alloys.

  7. Solar thermoelectric power generation for Mercury orbiter missions

    NASA Technical Reports Server (NTRS)

    Swerdling, M.; Raag, V.

    1979-01-01

    Mercury orbiter mission study results have shown that conventional silicon solar cell array technology is not adequate to produce power because of expected temperatures which range from -90 C to +285 C in about 50 minutes for 16 sun eclipses/day. The solar thermoelectric generator (STG), which requires relatively high temperatures, is being developed as a replacement power source. Several thermoelectric technologies (i.e., lead telluride alloys, bismuth telluride, selenide, and silicon-germanium alloys have been examined for their suitability. Solar concentrator configurations (i.e., flat plate, Fresnel lens, mini-cone, and Cassegrain types) were also studied as candidates for increasing incident radiation during Mercury orbital operations. Detailed results are presented, and show that an STG design based on the use of silicon-germanium alloy thermoelectric material and using high-voltage thermopiles with individual miniconical concentrators presents the optimum combination of technology and configuration for minimizing power source mass.

  8. Growth and Characterization of Copper INDIUM(1-X) Gallium(x) SELENIUM(2) and Copper Indium SULFUR(2Y) SELENIUM(2-2Y) Semiconductor Alloys and Evaluation of Their Electrochemical Solar Cells in IODINE(3)ION/IODIDE-ELECTROLYTE

    NASA Astrophysics Data System (ADS)

    Abid, Bader

    1991-02-01

    Crystals of CuIn_{1-x}Ga_{x} Se_2 and CuInS_ {2y}Se_{ 2-2y} were grown from stochiometric melts, by the gradient freeze method for different values of x and y respectively. With few exceptions these crystals were of p-type conductivity. In order to obtain n-type material, crystal growth experiments were also performed using Se deficient melt compositions, hence creating Se vacancies and related defects which act as donors. In addition, zone levelling was performed on two of the CuGa _{x}In _{1-x}Se_2 alloys to obtain more homogeneous crystals than accessible by gradient freezing. The band gap shift for these alloy systems with composition was established by photo-reflectance studies. The following band gap vs composition relationships were found. eqalign{E_{g } (CuIn_{1-x}Ga_{x }Se_2)&= 1.028 + 0.65 X + 0.21 X (X-1)cr E_{g} (CuInS_{2y}Se_{2-2y })& = 1.028 + 0.51 Y + 0.14 Y (Y-1)cr}Typical values for the carrier concentration were in the range of 10 ^{16} - 10^{17} per cm^3 as determined by Hall effect measurements. Chemical analysis of these bulk crystals were performed using Inductively Coupled Plasma Spectroscopy (ICP). The results of this method were reproducible within +/-1%. X ray diffraction studies were used to establish a and c axis lattice parameters. Linear relationships were found for the composition dependence of the lattice parameters. Photoluminescense studies on these alloys indicate that for CuIn_{1-x}Ga _{x}Se _2, there exists a greater variety of defect states inside the band gap than for comparable CuInS _{2y}Se_ {2-2y}. Semiconductor electrodes for these alloys were made by using In-Hg as back contact. Three-electrode photoelectrochemical cells were utilized using the standard calomel reference electrode and C as counter electrode. n-type CuInS _{2y}Se_ {2-2y} and CuIn_ {1-x}Ga_{x}Se_2 were evaluated in I_sp{3}{-} /I^- electrolyte. I-V curves indicate significant improvement in the values of V _{o.c} and F.F from the reported values for

  9. Interface engineering of titanium oxide protected a-Si:H/a-Si:H photoelectrodes for light induced water splitting

    NASA Astrophysics Data System (ADS)

    Ziegler, Jürgen; Yang, Florent; Wagner, Stephan; Kaiser, Bernhard; Jaegermann, Wolfram; Urbain, Félix; Becker, Jan-Philipp; Smirnov, Vladimir; Finger, Friedhelm

    2016-12-01

    TiO2 is a common protection layer on semiconductor electrodes for photoelectrochemical water splitting. We investigate the interface formation of TiO2 on amorphous silicon tandem solar cells by X-ray photoelectron spectroscopy. In order to optimize the contact properties, we prepare TiOx interface layers with various oxygen content by reactive magnetron sputter deposition. We observe, that a TiOx interface layer can reduce the silicon oxide growth during the film deposition on the amorphous silicon, but it forms a non-ohmic contact. The electrochemical investigation shows, that the benefit due to the reduction of the silicon oxide is counteracted by the unfavorable contact formation of TiOx interface layers prepared with low oxygen content.

  10. Photodegradation effects in materials exposed to high flux solar and solar simulated radiation

    SciTech Connect

    Ignatiev, A

    1992-04-01

    This report contains study results about photodegradation effects in materials exposed to high flux solar and solar simulated radiation. The studies show that high flux photoirradiation of materials can result in significant changes in the stability of materials. Photodesorption and photo-enhanced oxidation were determined to be the major mechanisms. These mechanisms were shown to affect, in extremely adverse ways, the expected thermal stability of solar relevant materials, especially stainless steels, (It is expected that related high temperature alloy steels will be similarly affected.) An analytical expression was generated to predict the flux behavior of the steels using {number sign}304 as a prototypical stainless steel system.

  11. Magnesium silicide intermetallic alloys

    NASA Astrophysics Data System (ADS)

    Li, Gh.; Gill, H. S.; Varin, R. A.

    1993-11-01

    Methods of induction melting an ultra-low-density magnesium silicide (Mg2Si) intermetallic and its alloys and the resulting microstructure and microhardness were studied. The highest quality ingots of Mg2Si alloys were obtained by triple melting in a graphite crucible coated with boron nitride to eliminate reactivity, under overpressure of high-purity argon (1.3 X 105 Pa), at a temperature close to but not exceeding 1105 °C ± 5 °C to avoid excessive evaporation of Mg. After establishing the proper induction-melting conditions, the Mg-Si binary alloys and several Mg2Si alloys macroalloyed with 1 at. pct of Al, Ni, Co, Cu, Ag, Zn, Mn, Cr, and Fe were induction melted and, after solidification, investigated by optical microscopy and quantitative X-ray energy dispersive spectroscopy (EDS). Both the Mg-rich and Si-rich eutectic in the binary alloys exhibited a small but systematic increase in the Si content as the overall composition of the binary alloy moved closer toward the Mg2Si line compound. The Vickers microhardness (VHN) of the as-solidified Mg-rich and Si-rich eutectics in the Mg-Si binary alloys decreased with increasing Mg (decreasing Si) content in the eutectic. This behavior persisted even after annealing for 75 hours at 0.89 pct of the respective eutectic temperature. The Mg-rich eutectic in the Mg2Si + Al, Ni, Co, Cu, Ag, and Zn alloys contained sections exhibiting a different optical contrast and chemical composition than the rest of the eutectic. Some particles dispersed in the Mg2Si matrix were found in the Mg2Si + Cr, Mn, and Fe alloys. The EDS results are presented and discussed and compared with the VHN data.

  12. A hybrid solar cell fabricated using amorphous silicon and a fullerene derivative.

    PubMed

    Yun, Myoung Hee; Jang, Ji Hoon; Kim, Kyung Min; Song, Hee-eun; Lee, Jeong Chul; Kim, Jin Young

    2013-12-07

    Hybrid solar cells, based on organic and inorganic semiconductors, are a promising way to enhance the efficiency of solar cells because they make better use of the solar spectrum and are straightforward to fabricate. We report on a new hybrid solar cell comprised of hydrogenated amorphous silicon (a-Si:H), [6,6]-phenyl-C71-butyric acid methyl ester ([71]PCBM), and poly-3,4-ethylenedioxythiophene poly styrenesulfonate (PEDOT:PSS). The properties of these PEDOT:PSS/a-Si:H/[71]PCBM devices were studied as a function of the thickness of the a-Si:H layer. It was observed that the open circuit voltage and the short circuit current density of the device depended on the thickness of the a-Si:H layer. Under simulated one sun AM 1.5 global illumination (100 mW cm(-2)), a power conversion efficiency of 2.84% was achieved in a device comprised of a 274 nm-thick layer of a-Si:H; this is the best performance achieved to date for a hybrid solar cell made of amorphous Si and organic materials.

  13. Impact Behavior of A356 Foundry Alloys in the Presence of Trace Elements Ni and V

    NASA Astrophysics Data System (ADS)

    Casari, Daniele; Ludwig, Thomas H.; Merlin, Mattia; Arnberg, Lars; Garagnani, Gian Luca

    2015-02-01

    In the present work, the impact behavior of unmodified A356 alloys with the addition of Ni or V in as-cast and T6 heat-treated conditions was assessed. Charpy V-notched specimens obtained from sand and permanent mold casting showed low total absorbed energy average values ( W t < 2 J). SEM analysis of fracture profiles and surfaces indicated a Si-driven crack propagation with a predominant transgranular fracture mode. Occasionally, intergranular contributions to fracture were detected in the permanent mold cast alloys due to the locally finer microstructure. Concurrent mechanisms related to the chemical composition, solidification conditions and heat treatment were found to control the impact properties of the alloys. While the trace element Ni exerted only minor effects on the impact toughness of the A356 alloy, V had a strong influence: (i) V-containing sand cast alloys absorbed slightly higher impact energies compared to the corresponding A356 base alloys; (ii) in the permanent mold cast alloys, V in solid solution led to a considerable loss of ductility, which in turn decreased the total absorbed energy.

  14. Radicals and ions controlling by adjusting the antenna-substrate distance in a-Si:H deposition using a planar ICP for c-Si surface passivation

    NASA Astrophysics Data System (ADS)

    Zhou, H. P.; Xu, S.; Xu, M.; Xu, L. X.; Wei, D. Y.; Xiang, Y.; Xiao, S. Q.

    2017-02-01

    Being a key issue in the research and fabrication of silicon heterojunction (SHJ) solar cells, crystalline silicon (c-Si) surface passivation is theoretically and technologically intricate due to its complicate dependence on plasma characteristics, material properties, and plasma-material interactions. Here amorphous silicon (a-Si:H) grown by a planar inductively coupled plasma (ICP) reactor working under different antenna-substrate distances of d was used for the surface passivation of low-resistivity p-type c-Si. It is found that the microstructures (i.e., the crystallinity, Si-H bonding configuration etc.) and passivation function on c-Si of the deposited a-Si:H were profoundly influenced by the parameter of d, which primarily determines the types of growing precursors of SiHn/H contributing to the film growth and the interaction between the plasma and growing surface. c-Si surface passivation is analyzed in terms of the d-dependent a-Si:H properties and plasma characteristics. The controlling of radical types and ion bombardment on the growing surface through adjusting parameter d is emphasized.

  15. Analysis of thin layer optical properties of A-Si:H P-Type doping CH4 and P-Type without CH4 is deposited PECVD systems

    NASA Astrophysics Data System (ADS)

    Prayogi, Soni; Ayunis; Kresna; Cahyono, Yoyok; Akidah; Darminto

    2017-05-01

    The study of a thin layer growth of hydrogenated amorphous silicon (a-Si: H) using the technique of plasma enhancing chemical vapor deposition (PECVD) has been conducted. Material a-Si: H is one type of materials that is applied as solar cells. In this study, a thin layer of a-Si: H grown on glass substrates by using CH4 and without CH4. Most sources Si gas were used in silane gas (SiH4) 20% dissolved in hydrogen gas (H2). The addition of CH4 gas greatly affects the structure of layer morphology and energy gap in thin layers. Based on the results of characterization using AFM, it was obtained a layer thickness which was added by CH4 100 nm and layer thickness of 45 nm without CH4. While the optical energy band gap were conducted, based on the data from characterization using UV-Vis in the wavelength range of 400-800 nm, it was obtained layer optical energy band gap added by CH4 that was 1,95 eV and layer without CH4 that was 1.89 eV.

  16. Improvement in passivation quality and open-circuit voltage in silicon heterojunction solar cells by the catalytic doping of phosphorus atoms

    NASA Astrophysics Data System (ADS)

    Tsuzaki, Shogo; Ohdaira, Keisuke; Oikawa, Takafumi; Koyama, Koichi; Matsumura, Hideki

    2015-07-01

    We apply phosphorus (P) doping to amorphous silicon (a-Si)/crystalline silicon (c-Si) heterojunction solar cells realized by exposing c-Si to P-related radicals generated by the catalytic cracking of PH3 molecules (Cat-doping). An ultrathin n+-layer formed by P Cat-doping acts to improve the effective minority carrier lifetime (τeff) and implied open-circuit voltage (implied Voc) owing to its field effect by which minority holes are sent back from an a-Si/c-Si interface. An a-Si/c-Si heterojunction solar cell with a P Cat-doped layer shows better solar cell performance, particularly in Voc, than the cell without P Cat-doping. This result demonstrates the feasibility of applying Cat-doping to a-Si/c-Si heterojunction solar cells, owing to the advantage of the low-temperature (<200 °C) process of Cat-doping.

  17. Analysis of niobium alloys.

    PubMed

    Ferraro, T A

    1968-09-01

    An ion-exchange method was applied to the analysis of synthetic mixtures representing various niobium-base alloys. The alloying elements which were separated and determined include vanadium, zirconium, hafnium, titanium, molybdenum, tungsten and tantalum. Mixtures containing zirconium or hafnium, tungsten, tantalum and niobium were separated by means of a single short column. Coupled columns were employed for the resolution of mixtures containing vanadium, zirconium or titanium, molybdenum, tungsten and niobium. The separation procedures and the methods employed for the determination of the alloying elements in their separate fractions are described.

  18. TUNGSTEN BASE ALLOYS

    DOEpatents

    Schell, D.H.; Sheinberg, H.

    1959-12-15

    A high-density quaternary tungsten-base alloy having high mechanical strength and good machinability composed of about 2 wt.% Ni, 3 wt.% Cu, 5 wt.% Pb, and 90wt.% W is described. This alloy can be formed by the powder metallurgy technique of hot pressing in a graphite die without causing a reaction between charge and the die and without formation of a carbide case on the final compact, thereby enabling re-use of the graphite die. The alloy is formable at hot- pressing temperatures of from about 1200 to about 1350 deg C. In addition, there is little component shrinkage, thereby eliminating the necessity of subsequent extensive surface machining.

  19. Electrical Resistivity of Ten Selected Binary Alloy Systems.

    DTIC Science & Technology

    1981-04-01

    alloys --* Aluminum Alloys --*Copper alloys --*Gold alloys --*Nickel Alloys --*Silver alloys --*Iron alloys --*Palladium alloys ... aluminum -magnesium, and copper-zinc) are given for 27 compositions: 0 (pure element).* For aluminum -copper, aluninu.-eagnes tur, end copper-zinc alloy ...available data and infor- mation. The ten binary alloy systems selected are the systems of aluminum - copper, aluminum -magnesium, copper-gold,

  20. Atomistic study of the structural and electronic properties of a-Si:H/c-Si interfaces.

    PubMed

    Santos, Iván; Cazzaniga, Marco; Onida, Giovanni; Colombo, Luciano

    2014-03-05

    We investigate the structural and electronic properties of the interface between hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) by combining tight-binding molecular dynamics and DFT ab initio electronic structure calculations. We focus on the c-Si(100)(1×1)/a-Si:H, c-Si(100)(2×1)/a-Si:H and c-Si(111)/a-Si:H interfaces, due to their technological relevance. The analysis of atomic rearrangements induced at the interface by the interaction between H and Si allowed us to identify the relevant steps that lead to the transformation from c-Si(100)(1×1)/a-Si:H to c-Si(100)(2×1)/a-Si:H. The interface electronic structure is found to be characterized by spatially localized mid-gap states. Through them we have identified the relevant atomic structures responsible for the interface defect states, namely: dangling-bonds, H bridges, and strained bonds. Our analysis contributes to a better understanding of the role of such defects in c-Si/a-Si:H interfaces.

  1. An NMR investigation of H cluster configurations in a-Si:H

    SciTech Connect

    Stephen, J.T.; Rutland, J.M.; Han, D.; Wu, Y.

    1997-07-01

    In this work the characteristics of hydrogen clusters in hot filament assisted CVD and conventional glow discharge a-Si:H films are discussed. Computer simulations of the observed free-induction decays of the {sup 1}H NMR signals indicate that the distribution of the nearest-neighbor distances between H atoms in the H clusters is quite narrow in hot filament assisted CVD a-Si:H whereas the distribution is larger in glow discharge a-Si:H. This is clear evidence of improved structural order in hot filament assisted CVD a-Si:H. The relaxed hydrogenated divacancy and multi-vacancy models reproduce the main features of the observed free-induction decay in hot-wire a-Si:H very well. Computer simulations of the multiple-quantum NMR spectra indicate that a relaxed hydrogenated divacancy configuration leads to good agreement with experimental observations in device quality glow discharge a-Si:H. Results of simulations based on other H cluster configurations are also discussed. These results provide restrictions on the possible models for H clusters in a-Si:H.

  2. Carbon nanotube-amorphous silicon hybrid solar cell with improved conversion efficiency.

    PubMed

    Funde, Adinath M; Nasibulin, Albert G; Syed, Hashmi Gufran; Anisimov, Anton S; Tsapenko, Alexey; Lund, Peter; Santos, J D; Torres, I; Gandía, J J; Cárabe, J; Rozenberg, A D; Levitsky, Igor A

    2016-05-06

    We report a hybrid solar cell based on single walled carbon nanotubes (SWNTs) interfaced with amorphous silicon (a-Si). The high quality carbon nanotube network was dry transferred onto intrinsic a-Si forming Schottky junction for metallic SWNT bundles and heterojunctions for semiconducting SWNT bundles. The nanotube chemical doping and a-Si surface treatment minimized the hysteresis effect in current-voltage characteristics allowing an increase in the conversion efficiency to 1.5% under an air mass 1.5 solar spectrum simulator. We demonstrated that the thin SWNT film is able to replace a simultaneously p-doped a-Si layer and transparent conductive electrode in conventional amorphous silicon thin film photovoltaics.

  3. Over 20% conversion efficiency on silicon heterojunction solar cells by IPA-free substrate texturization

    NASA Astrophysics Data System (ADS)

    Kegel, Jan; Angermann, Heike; Stürzebecher, Uta; Conrad, Erhard; Mews, Mathias; Korte, Lars; Stegemann, Bert

    2014-05-01

    Amorphous/crystalline heterojunction (a-Si:H/c-Si) solar cells on n-type substrates, textured in isopropanol (IPA)-free solution, with conversion efficiencies exceeding 20% are presented. These values represent a considerable improvement over our previously reported best cell efficiencies for cells with (i)a-Si:H buffer layer. They were achieved by thorough optimization of the surface texture, of the a-Si:H/c-Si interface passivation, and of the thickness of the intrinsic a-Si:H front layer, resulting in improved open-circuit voltages and fill factors. Thus, solar cells fabricated on IPA-free textured Si wafers can compete with those processed on wafers textured conventionally in IPA-containing alkaline solution and are an attractive alternative for industrial production due to their better process control, lower environmental impact and lower costs.

  4. Engineering the Electronic Band Structure for Multiband Solar Cells

    SciTech Connect

    Lopez, N.; Reichertz, L.A.; Yu, K.M.; Campman, K.; Walukiewicz, W.

    2010-07-12

    Using the unique features of the electronic band structure of GaNxAs1-x alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum efficiency and photomodulated reflectivity are analyzed in terms of the Band Anticrossing model of the electronic structure of highly mismatched alloys. The results demonstrate the feasibility of using highly mismatched alloys to engineer the semiconductor energy band structure for specific device applications.

  5. Engineering the electronic band structure for multiband solar cells.

    PubMed

    López, N; Reichertz, L A; Yu, K M; Campman, K; Walukiewicz, W

    2011-01-14

    Using the unique features of the electronic band structure of GaN(x)As(1-x) alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum efficiency and photomodulated reflectivity are analyzed in terms of the band anticrossing model of the electronic structure of highly mismatched alloys. The results demonstrate the feasibility of using highly mismatched alloys to engineer the semiconductor energy band structure for specific device applications.

  6. Influence of alloy microstructure on the microshear bond strength of basic alloys to a resin luting cement.

    PubMed

    Bauer, José; Costa, José Ferreira; Carvalho, Ceci Nunes; Souza, Douglas Nesadal de; Loguercio, Alessandro Dourado; Grande, Rosa Helena Miranda

    2012-01-01

    The aim of this study was to evaluate the influence of microstructure and composition of basic alloys on their microshear bond strength (µSBS) to resin luting cement. The alloys used were: Supreme Cast-V (SC), Tilite Star (TS), Wiron 99 (W9), VeraBond II (VBII), VeraBond (VB), Remanium (RM) and IPS d.SIGN 30 (IPS). Five wax patterns (13 mm in diameter and 4mm height) were invested, and cast in a centrifugal casting machine for each basic alloy. The specimens were embedded in resin, polished with a SiC paper and sandblasted. After cleaning the metal surfaces, six tygon tubes (0.5 mm height and 0.75 mm in diameter) were placed on each alloy surface, the resin cement (Panavia F) was inserted, and the excess was removed before light-curing. After storage (24 h/37°C), the specimens were subjected to µSBS testing (0.5 mm/min). The data were subjected to a one-way repeated measures analysis of variance and Turkey's test (α=0.05). After polishing, their microstructures were revealed with specific conditioners. The highest µSBS (mean/standard deviation in MPa) were observed in the alloys with dendritic structure, eutectic formation or precipitation: VB (30.6/1.7), TS (29.8/0.9), SC (30.6/1.7), with the exception of IPS (31.1/0.9) which showed high µSBS but no eutectic formation. The W9 (28.1/1.5), VBII (25.9/2.0) and RM (25.9/0.9) showed the lowest µSBS and no eutectic formation. It seems that alloys with eutectic formation provide the highest µSBS values when bonded to a light-cured resin luting cement.

  7. Electroplating on titanium alloy

    NASA Technical Reports Server (NTRS)

    Lowery, J. R.

    1971-01-01

    Activation process forms adherent electrodeposits of copper, nickel, and chromium on titanium alloy. Good adhesion of electroplated deposits is obtained by using acetic-hydrofluoric acid anodic activation process.

  8. Brazing dissimilar aluminum alloys

    NASA Technical Reports Server (NTRS)

    Dalalian, H.

    1979-01-01

    Dip-brazing process joins aluminum castings to aluminum sheet made from different aluminum alloy. Process includes careful cleaning, surface preparation, and temperature control. It causes minimum distortion of parts.

  9. Alloy Selection System

    SciTech Connect

    2001-02-01

    Software will Predict Corrosion Rates to Improve Productivity in the Chemical Industry. Many aspects of equipment design and operation are influenced by the choice of the alloys used to fabricate process equipment.

  10. Bimetallic non-alloyed NPs for improving the broadband optical absorption of thin amorphous silicon substrates

    PubMed Central

    2014-01-01

    We propose the use of bimetallic non-alloyed nanoparticles (BNNPs) to improve the broadband optical absorption of thin amorphous silicon substrates. Isolated bimetallic NPs with uniform size distribution on glass and silicon are obtained by depositing a 10-nm Au film and annealing it at 600°C; this is followed by an 8-nm Ag film annealed at 400°C. We experimentally demonstrate that the deposition of gold (Au)-silver (Ag) bimetallic non-alloyed NPs (BNNPs) on a thin amorphous silicon (a-Si) film increases the film's average absorption and forward scattering over a broad spectrum, thus significantly reducing its total reflection performance. Experimental results show that Au-Ag BNNPs fabricated on a glass substrate exhibit resonant peaks at 437 and 540 nm and a 14-fold increase in average forward scattering over the wavelength range of 300 to 1,100 nm in comparison with bare glass. When deposited on a 100-nm-thin a-Si film, Au-Ag BNNPs increase the average absorption and forward scattering by 19.6% and 95.9% compared to those values for Au NPs on thin a-Si and plain a-Si without MNPs, respectively, over the 300- to 1,100-nm range. PMID:24725390

  11. Solar Simulator

    NASA Technical Reports Server (NTRS)

    1981-01-01

    Oriel Corporation's simulators have a high pressure xenon lamp whose reflected light is processed by an optical system to produce a uniform solar beam. Because of many different types of applications, the simulators must be adjustable to replicate many different areas of the solar radiation spectrum. Simulators are laboratory tools for such purposes as testing and calibrating solar cells, or other solar energy systems, testing dyes, paints and pigments, pharmaceuticals and cosmetic preparations, plant and animal studies, food and agriculture studies and oceanographic research.

  12. Solar Physics

    NASA Technical Reports Server (NTRS)

    Wu, S. T.

    2000-01-01

    The areas of emphasis are: (1) develop theoretical models of the transient release of magnetic energy in the solar atmosphere, e.g., in solar flares, eruptive prominences, coronal mass ejections, etc.; (2) investigate the role of the Sun's magnetic field in the structuring of solar corona by the development of three-dimensional numerical models that describe the field configuration at various heights in the solar atmosphere by extrapolating the field at the photospheric level; (3) develop numerical models to investigate the physical parameters obtained by the ULYSSES mission; (4) develop numerical and theoretical models to investigate solar activity effects on the solar wind characteristics for the establishment of the solar-interplanetary transmission line; and (5) develop new instruments to measure solar magnetic fields and other features in the photosphere, chromosphere transition region and corona. We focused our investigation on the fundamental physical processes in solar atmosphere which directly effect our Planet Earth. The overall goal is to establish the physical process for the Sun-Earth connections.

  13. PLUTONIUM-URANIUM ALLOY

    DOEpatents

    Coffinberry, A.S.; Schonfeld, F.W.

    1959-09-01

    Pu-U-Fe and Pu-U-Co alloys suitable for use as fuel elements tn fast breeder reactors are described. The advantages of these alloys are ease of fabrication without microcracks, good corrosion restatance, and good resistance to radiation damage. These advantages are secured by limitation of the zeta phase of plutonium in favor of a tetragonal crystal structure of the U/sub 6/Mn type.

  14. Semiconductor Alloy Theory.

    DTIC Science & Technology

    1986-01-14

    ftoc*o~ow7 and Idenify’ by block nam. bor) Electron mobility , Lattice Relaxation, Bond Length, Bond Energy, Mixing Enthalpies, Band Structure, Core...including: (1) generalization of Brooks’ formula for alloy-scattering limited electron mobility to including multiple bands and indirect gaps, (2...calculation of SiGe alloys band structure, electron mobility and core-exciton binding energy and • :linewidth, (3) comprehensive calculation of bond

  15. Polarized electroabsorption spectra and light soaking of solar cells based on hydrogenated amorphous silicon

    NASA Astrophysics Data System (ADS)

    Jiang, Lin; Wang, Qi; Schiff, E. A.; Guha, S.; Yang, J.

    1998-03-01

    We present grazing-incidence measurements of polarized electroabsorption spectra in p-i-n solar cells based on hydrogenated amorphous silicon (a-Si:H). We find a significantly stronger polarization dependence in the present measurements compared with earlier work based on electroabsorption detected using coplanar electrodes on a-Si:H thin films. We do not find any significant dependence of the polarized electroabsorption upon light soaking, although this effect was found in previous work with coplanar electrodes.

  16. Disk Alloy Development

    NASA Technical Reports Server (NTRS)

    Gabb, Tim; Gayda, John; Telesman, Jack

    2001-01-01

    The advanced powder metallurgy disk alloy ME3 was designed using statistical screening and optimization of composition and processing variables in the NASA HSR/EPM disk program to have extended durability at 1150 to 1250 "Fin large disks. Scaled-up disks of this alloy were produced at the conclusion of this program to demonstrate these properties in realistic disk shapes. The objective of the UEET disk program was to assess the mechanical properties of these ME3 disks as functions of temperature, in order to estimate the maximum temperature capabilities of this advanced alloy. Scaled-up disks processed in the HSR/EPM Compressor / Turbine Disk program were sectioned, machined into specimens, and tested in tensile, creep, fatigue, and fatigue crack growth tests by NASA Glenn Research Center, in cooperation with General Electric Engine Company and Pratt & Whitney Aircraft Engines. Additional sub-scale disks and blanks were processed and tested to explore the effects of several processing variations on mechanical properties. Scaled-up disks of an advanced regional disk alloy, Alloy 10, were used to evaluate dual microstructure heat treatments. This allowed demonstration of an improved balance of properties in disks with higher strength and fatigue resistance in the bores and higher creep and dwell fatigue crack growth resistance in the rims. Results indicate the baseline ME3 alloy and process has 1300 to 1350 O F temperature capabilities, dependent on detailed disk and engine design property requirements. Chemistry and process enhancements show promise for further increasing temperature capabilities.

  17. Ultrahigh temperature intermetallic alloys

    SciTech Connect

    Brady, M.P.; Zhu, J.H.; Liu, C.T.; Tortorelli, P.F.; Wright, J.L.; Carmichael, C.A.

    1998-11-01

    A new family of Cr-Cr{sub 2}Ta intermetallic alloys based on Cr-(6--10)Ta (at.%) is under development for structural use in oxidizing environments in the 1,000-1,300 C (1,832--2,372 F) temperature range. Development objectives relate to high temperature strength and oxidation resistance and room temperature fracture toughness. The 1,200 C (2,192 F) strength goals have been met: yield and fracture strengths of 275 MPa (40 ksi) and 345 MPa (50 ksi), respectively, were achieved. Progress in attaining reasonable fracture toughness of Cr-Cr{sub 2}Ta alloys has been made; current alloys exhibit room-temperature values of about 10--12 MPa{radical}m (1.1 MPa{radical}m = 1 ksi{radical}in.). Oxidation rates of these alloys at 950 C (1,742 F) in air are in the range of those reported for chromia-forming alloys. At 1,100 C (2,012 F) in air, chromia volatility was significant but, nevertheless, no scale spallation and positive weight gains of 1--5 mg/cm{sup 2} have been observed during 120-h, 6-cycle oxidation screening tests. These mechanical and oxidative properties represent substantial improvement over Cr-Cr{sub 2}Nb and Cr-Cr{sub 2}Zr alloys previously developed.

  18. Furnace alloys update

    SciTech Connect

    Vervalin, C.H.

    1984-12-01

    The principal share of the cast heat resistant alloy market has long been held by HK-40, a 25Cr/20Ni steel with an average carbon content of 0.40 percent. HK-40 alloy has done a commendable job, especially after its limitations in the various processes were better understood, by designers and operators alike. Presently, and in the future, the materials performance demands of new reformers, ethylene pyrolysis, coal gasification, iron ore reduction and other thermally intensive processes will require alloy capabilities frequently beyond those of HK-40. This article presents an update of the capabilities and limitations of HK-40 and describes a group of higher nickel 25Cr/35Ni alloys of the HP-base, mostly modified by various additions such as columbian, tungsten, titanium, zirconium, cobalt, chromium, molybdenum, silicon and/or aluminum. A number of these alloys are proprietary. Data on the 24Cr/24Ni and 30Cr/30Ni alloys are presented as they have proven, reliable performance at an economical price.

  19. Multiband GaNAsP Quaternary Alloys

    SciTech Connect

    Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

    2005-12-08

    We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

  20. Radiation resistance of thin-film solar cells for space photovoltaic power

    NASA Technical Reports Server (NTRS)

    Woodyard, James R.; Landis, Geoffrey A.

    1991-01-01

    Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.