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Sample records for a-si thin films

  1. Characterization of the visible photoluminescence from porous a-Si:H and porous a-Si:C:H thin films

    SciTech Connect

    Estes, M.J.; Hirsch, L.R.; Wichart, S.; Moddel, G.

    1996-12-31

    The authors report on the influence of doping, temperature, porosity, and bandgap on the visible photoluminescence properties of anodically-etched porous a-Si:H and a-Si:C:H thin films. Only boron-doped, p-type a-Si:H or a-Si:C:H samples exhibited any visible photoluminescence. The authors see evidence of discrete defect or impurity levels in temperature-dependent luminescence measurements. Unlike in porous crystalline silicon, they see no correlation of luminescence energy with porosity. The authors do, though, observe a correlation of luminescence energy with bandgap of the starting a-Si:C:H films. They discuss the implication of these observations on the nature of the luminescence mechanism.

  2. Study of microstructural and optical properties of a-Si:H thin films

    NASA Astrophysics Data System (ADS)

    Jurečka, Stanislav; Müllerová, Jarmila

    2010-12-01

    Undoped amorphous silicon thin films pasivated by hydrogen (a-Si:H) are important for a number of industrial and research applications, especially for optoelectronics, photovoltaics, optical communications, senzorics, laser technology and so on. We experimentally studied properties of the a-Si:H thin films prepared by the plasma-enhanced chemical vapour deposition (PECVD) method. Sample microstructure properties and the effect of the microstructure on optical properties of the a-Si:H thin films deposited by PECVD on glass were analysed. The spectral refractive index, extinction coefficient, and surface morphology were analysed for the series of a-Si:H samples prepared in different technological conditions from H diluted silane plasma. Surface morphology of studied samples was described by the atomic force microscopy (AFM) method. Optical properties of a-Si:H thin films were analysed by numerical optimization of the microstructural and dispersion model of optical parameters relative to the experimental spectral reflectance. The results show that at dilution between 20 and 30 the transition between amorphous and polycrystalline phase occurs. The sample becomes a mixture of amorphous and polycrystalline phase with nano-sized grains and voids with decreasing hydrogen concentration.

  3. Surface roughness evolution in the growth of a-Si: H thin films studied by ellipsometry

    NASA Astrophysics Data System (ADS)

    Canillas, A.; Campmany, J.; Andújar, J. L.; Bertran, E.; Morenza, J. L.

    1991-07-01

    In situ real time ellipsometry at 3.4 eV photon energy has been used to analyze the deposition of hydrogenated amorphous silicon (a-Si:H) thin films obtained by RF glow discharge decomposition of silane gas. The study is focused on the evolution of the microstructure during the films growth. The results are explained considering a theoretical model which assumes a homogeneous growth of the a-Si:H below a surface roughness layer which increases 0.5-0.7 nm in thickness during the first 400 nm of film growth. The bulk layer microstructure appears to be homogeneous within 1% of density variations.

  4. Investigations of ultra-thin single layer a-Si:H films

    SciTech Connect

    Koehler, S.A.

    1997-07-01

    Measurements are presented as direct evidence of tail states in ultra-thin a-Si:H single layer films. Including tail states in computer simulations completely removes the staircase structure in the differential optical spectra, previously associated with the quantum confinement of carriers.

  5. Growth temperature effect on a-Si:H thin films studied by constant photocurrent method

    NASA Astrophysics Data System (ADS)

    Wadibhasme, N. A.; Dusane, R. O.

    2013-02-01

    Hydrogenated amorphous silicon (a-Si:H) thin films are synthesized by tuning different process parameters among which substrate temperature of film growth plays an important role in monitoring the device quality of the film. In this paper we have used the constant photocurrent method (CPM) to study the effect of growth temperature on the electronic and optical parameters of a-Si:H films at different photon energies. This technique primarily measures the absorption coefficient which is a result of different electronic transitions that contribute to the photocurrent. The nature of absorption coefficient changes with growth temperature that explicitly provides the information about the density of defect states present in the mid gap of a-Si:H.

  6. Hydrogen plasma induced modification of photoluminescence from a-SiNx:H thin films

    NASA Astrophysics Data System (ADS)

    Bommali, R. K.; Ghosh, S.; Vijaya Prakash, G.; Gao, K.; Zhou, S.; Khan, S. A.; Srivastava, P.

    2014-02-01

    Low temperature (250-350 °C) hydrogen plasma annealing (HPA) treatments have been performed on amorphous hydrogenated silicon nitride (a-SiNx:H) thin films having a range of compositions and subsequent modification of photoluminescence (PL) is investigated. The PL spectral shape and peak positions for the as deposited films could be tuned with composition and excitation energies. HPA induced modification of PL of these films is found to depend on the N/Si ratio (x). Upon HPA, the PL spectra show an emergence of a red emission band for x ≤ 1, whereas an overall increase of intensity without change in the spectral shape is observed for x > 1. The emission observed in the Si rich films is attributed to nanoscale a-Si:H inclusions. The enhancement is maximum for off-stoichiometric films (x ˜ 1) and decreases as the compositions of a-Si (x = 0) and a-Si3N4 (x = 1.33) are approached, implying high density of non-radiative defects around x = 1. The diffusion of hydrogen in these films is also analyzed by Elastic Recoil Detection Analysis technique.

  7. Metastability of a-SiOx:H thin films for c-Si surface passivation

    NASA Astrophysics Data System (ADS)

    Serenelli, L.; Martini, L.; Imbimbo, L.; Asquini, R.; Menchini, F.; Izzi, M.; Tucci, M.

    2017-01-01

    The adoption of a-SiOx:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiNx on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiOx:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Sisbnd H and Sisbnd O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm2. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiOx:H/c-Si/a-SiOx:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiOx passivation properties, was furthermore considered. In particular we monitored the UV light soaking effect on c-Si wafers after a-SiOx:H coating by PECVD and after a thermal annealing treatment at 300 °C for 30 min, having selected these conditions on the basis of the study of the effect due to different temperatures and durations. We correlated the lifetime evolution and the metastability effect of thermal annealing to the a-SiOx:H/c-Si interface considering the evolution

  8. Light trapping in a-Si:H thin film solar cells using silver nanostructures

    NASA Astrophysics Data System (ADS)

    Wang, P. H.; Theuring, M.; Vehse, M.; Steenhoff, V.; Agert, C.; Brolo, A. G.

    2017-01-01

    Plasmonic thin film solar cells (modified with metallic nanostructures) often display enhanced light absorption due to surface plasmon resonance (SPR). However, the plasmonic field localization may not be significantly beneficial to improved photocurrent conversion efficiency for all types of cell configurations. For instance, the integration of random metallic nanoparticles (NPs) into thin film solar cells often introduces additional texturing. This texturing might also contribute to enhanced photon-current efficiency. An experimental systematic investigation to decouple both the plasmonic and the texturing contributions is hard to realize for cells modified with randomly deposited metallic nanoparticles. This work presents an experimental and computational investigation of well-defined plasmonic (Ag) nanoparticles, fabricated by nanosphere lithography, integrated to the back contact of hydrogenated amorphous silicon (a-Si:H) solar cells. The size, shape, periodicity and the vertical position of the Ag nanoparticles were well-controlled. The experimental results suggested that a-Si:H solar cells modified with a periodic arrangement of Ag NPs (700 nm periodicity) fabricated just at the top of the metal contact in the back reflector yields the highest improvement in terms of current density (JSC). Finite-difference time-domain (FDTD) simulations also indicated that Ag nanoparticles located at the top of the metal contact in the back reflector is expected to lead to the most efficient light confinement inside the a-Si:H absorber intrinsic layer (i-layer).

  9. White light emission and optical gains from a Si nanocrystal thin film.

    PubMed

    Wang, Dong-Chen; Hao, Hong-Chen; Chen, Jia-Rong; Zhang, Chi; Zhou, Jing; Sun, Jian; Lu, Ming

    2015-11-27

    We report a Si nanocrystal thin film consisting of free-standing Si nanocrystals, which can emit white light and show positive optical gains for its red, green and blue (RGB) components under ultraviolet excitation. Si nanocrystals with ϕ = 2.31 ± 0.35 nm were prepared by chemical etching of Si powder, followed by filtering. After being mixed with SiO2 sol-gel and thermally annealed, a broadband photoluminescence (PL) from the thin film was observed. The RGB ratio of the PL can be tuned by changing the annealing temperature or atmosphere, which is 1.00/3.26/4.59 for the pure white light emission. The origins of the PL components could be due to differences in oxygen-passivation degree for Si nanocrystals. The results may find applications in white-light Si lasing and Si lighting.

  10. White light emission and optical gains from a Si nanocrystal thin film

    NASA Astrophysics Data System (ADS)

    Wang, Dong-Chen; Hao, Hong-Chen; Chen, Jia-Rong; Zhang, Chi; Zhou, Jing; Sun, Jian; Lu, Ming

    2015-11-01

    We report a Si nanocrystal thin film consisting of free-standing Si nanocrystals, which can emit white light and show positive optical gains for its red, green and blue (RGB) components under ultraviolet excitation. Si nanocrystals with ϕ = 2.31 ± 0.35 nm were prepared by chemical etching of Si powder, followed by filtering. After being mixed with SiO2 sol-gel and thermally annealed, a broadband photoluminescence (PL) from the thin film was observed. The RGB ratio of the PL can be tuned by changing the annealing temperature or atmosphere, which is 1.00/3.26/4.59 for the pure white light emission. The origins of the PL components could be due to differences in oxygen-passivation degree for Si nanocrystals. The results may find applications in white-light Si lasing and Si lighting.

  11. Calculation of optical band gaps of a-Si:H thin films by ellipsometry and UV-Vis spectrophotometry

    NASA Astrophysics Data System (ADS)

    Qiu, Yijiao; Li, Wei; Wu, Maoyang; Fu, Junwei; Jiang, Yadong

    2010-10-01

    Hydrogenated amorphous silicon (a-Si:H) thin films doped with Phosphorus (P) and Nitrogen (N) were deposited by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). The optical band gaps of the thin films obtained through either changing the gas pressure (P-doped only) or adulterating nitrogen concentration (with fixed P content) were investigated by means of Ellipsometric and Ultraviolet-Visible (UV-Vis) spectroscopy, respectively. Tauc formula was used in calculating the optical band gaps of the thin films in both methods. The results show that Ellipsometry and UV-Vis spectrophotometry can be applied in the research of the optical properties of a-Si:H thin films experimentally. Both methods reflect the variation law of the optical band gaps caused by CVD process parameters, i.e., the optical band gap of the a-Si:H thin films is increased with the rise of the gas pressure or the nitrogen concentration respectively. The difference in optical band gaps of the doped a-Si:H thin films calculated by Ellipsometry or UV-Vis spectrophotometry are not so great that they both can be used to measure the optical band gaps of the thin films in practical applications.

  12. Excitation dependent photoluminescence study of Si-rich a-SiNx:H thin films

    NASA Astrophysics Data System (ADS)

    Kumar Bommali, Ravi; Preet Singh, Sarab; Rai, Sanjay; Mishra, P.; Sekhar, B. R.; Vijaya Prakash, G.; Srivastava, P.

    2012-12-01

    We report photoluminescence (PL) investigations on Si-rich amorphous hydrogenated silicon nitride (a-SiNx:H) thin films of different compositions, using three different excitation lasers, viz., 325 nm, 410 nm, and 532 nm. The as-deposited films contain amorphous Si quantum dots (QDs) as evidenced in high resolution transmission electron microscopy images. The PL spectral shape is in general seen to change with the excitation used, thus emphasizing the presence of multiple luminescence centres in these films. It is found that all the spectra so obtained can be deconvoluted assuming Gaussian contributions from defects and quantum confinement effect. Further strength to this assignment is provided by low temperature (300 °C) hydrogen plasma annealing of these samples, wherein a preferential enhancement of the QD luminescence over defect luminescence is observed.

  13. The structure of a-Si 1-xSn x:H thin films

    NASA Astrophysics Data System (ADS)

    Edwards, A. M.; Fairbanks, M. C.; Newport, R. J.

    1990-12-01

    The doping of a-Si:H with Sn is known to modify the electrical and optical properties of the material. The optical band gap decreases as the doping level is increased, however, there is no insulator-metal transition of the type observed, for example, when transition metals are used as dopants. In order to increase the understanding of the conductivity processes that occur in a-Si:metal:H alloys we have measured the atomic scale structure of a series of a-Si 1- xSn x:H thin-films using EXAFS. Samples were prepared by RF reactive co-sputtering and both Si and Sn K-edge EXAFS examined. The results indicate that the Sn atoms are substituted randomly into the a-Si tetrahedral random network. Both Si and Sn atoms retain fourfold co-ordination over the composition range studied (0⩽ x⩽0.18). In contrast to results obtained using transition metal dopants there is no local modification of the tetrahedral random network.

  14. Laser treatment of a-SiC:H thin films for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Ghica, D.; Mincu, Niculae E.; Stanciu, Catrinel A.; Dinescu, Gheorghe H.; Aldea, E.; Sandu, Viorel; Andrei, A.; Dinescu, Maria; Ferrari, A.; Balucani, M.; Lamedica, G.

    1998-07-01

    Amorphous and hydrogenated (a-SiC:H) as well as crystalline silicon carbide are widespread materials for optoelectronic applications. In this paper, we studied the effect of laser/RF plasma jet treatment of a-SiC:H thin films deposited by Plasma Enhanced Chemical Vapor Deposition, on Si wafers. A Nd:YAG laser ((lambda) equals 1.06 micrometers , tFWHM equals 14 ns, E0 equals 0.015 J/pulse) was used with a fluence of 4 mJ/cm2 incident on the sample, the number of pulses being varied. Plasma treatments were performed in a plasma jet generated by a capacity coupled RF discharge in N2. Different analysis techniques were used to investigate the films, before and after the irradiation: X-ray diffraction, X-ray photoelectron spectroscopy and transmission electron microscopy. We followed the modification of their structure and composition as an effect of the laser/plasma treatment. A comparison with the excimer and also with the RF treatments was performed.

  15. FT-IR analysis of high temperature annealing effects in a-SiC:H thin films

    NASA Astrophysics Data System (ADS)

    Frischmuth, Tobias; Schneider, Michael; Grille, Thomas; Schmid, U.

    2017-06-01

    Hydrogenated amorphous SiC (a-SiC:H) is an attractive material for MEMS applications where high robustness or operation in harsh environments is targeted. In previous publications, it was demonstrated, that the properties of a-SiC:H thin films can be tailored over a wide range by changing the auxiliary table excitation power of a dual plasma source deposition process using an inductively coupled plasma-enhanced chemical vapour deposition system. In this work, the annealing behavior of dual plasma source deposited a-SiC:H thin films under argon atmosphere is investigated by using Fourier transform infrared (FT-IR) spectroscopy for chemical analysis. All investigated layers show a decrease of hydrogen containing bonds (X-Hx) and an increase of Si-C bonds with increasing annealing temperature in the FT-IR spectrum. This behaviour is directly linked to the effusion of hydrogen from the thin films at elevated temperatures. In addition, films deposited at higher auxiliary plasma power show more X-Hx and less Si-C bonds, indicating a higher hydrogen amount in those films. All layers shrink with increasing annealing temperature due to the effusion of hydrogen with a stronger shrink at higher PT values caused by the increased hydrogen amount. This shrink also leads to a densification of the thin films.

  16. Study and Simulation of the Heterojunction Thin Film Solar Cell a-Si( n)/a-Si( i)/c-Si( p)/a-Si( i)/a-Si( p)

    NASA Astrophysics Data System (ADS)

    Toufik, Zarede; Hamza, Lidjici; Mohamed, Fathi; Achour, Mahrane

    2016-08-01

    In this article, we present a study based on numerical simulation of the electrical characteristics of a thin-film heterojunction solar cell (a-Si( n)/a-Si( i)/c-Si( p)/a-Si( i)/a-Si( p)), using the automat for simulation of hetero-structures (AFORS-Het) software. This cell is composed of four main layers of silicon (Si): (i) 5 nm amorphous silicon doped n, (ii) 100 μm crystalline silicon (substrate) doped p, (iii) 5 nm amorphous silicon doped p, and (iv) 3 nm amorphous silicon intrinsic. This cell has a front and rear metal contact of aluminum and zinc oxide (ZnO) front layer transparent conductive oxide of 80 nm thickness. The simulations were performed at conditions of "One Sun" irradiation with air mass 1.5 (AM1.5), and under absolute temperature T = 300 K. The simulation results have shown a high electrical conversion efficiency of about 30.29% and high values of open circuit voltage V oc = 779 mV. This study has also shown that the studied cell has good quality light absorption on a very broad spectrum.

  17. Aluminum recycling from reactor walls: A source of contamination in a-Si:H thin films

    SciTech Connect

    Longeaud, C.; Ray, P. P.; Bhaduri, A.; Daineka, D.; Johnson, E. V.; Roca i Cabarrocas, P.

    2010-11-15

    In this article, the authors investigate the contamination of hydrogenated amorphous silicon thin films with aluminum recycled from the walls and electrodes of the deposition reactor. Thin films of hydrogenated amorphous silicon were prepared under various conditions by a standard radio frequency plasma enhanced chemical vapor deposition process in two reactors, the chambers of which were constructed of either aluminum or stainless steel. The authors have studied the electronic properties of these thin films and have found that when using an aluminum reactor chamber, the layers are contaminated with aluminum recycled from the chamber walls and electrode. This phenomenon is observed almost independently of the deposition conditions. The authors show that this contamination results in slightly p-doped films and could be detrimental to the deposition of device grade films. The authors also propose a simple way to control and eventually suppress this contamination.

  18. Patterned ion beam implantation of Co ions into a SiO2 thin film via ordered nanoporous alumina masks.

    PubMed

    Guan, Wei; Ghatak, Jay; Peng, Yong; Peng, Nianhua; Jeynes, Chris; Inkson, Beverley; Möbus, Günter

    2012-02-03

    Spatially patterned ion beam implantation of 190 keV Co(+) ions into a SiO(2) thin film on a Si substrate has been achieved by using nanoporous anodic aluminum oxide with a pore diameter of 125 nm as a mask. The successful synthesis of periodic embedded Co regions using pattern transfer is demonstrated for the first time using cross-sectional (scanning) transmission electron microscopy (TEM) in combination with analytical TEM. Implanted Co regions are found at the correct relative lateral periodicity given by the mask and at a depth of about 120 nm.

  19. Hybrid ZnO nanowire/a-Si:H thin-film radial junction solar cells using nanoparticle front contacts

    NASA Astrophysics Data System (ADS)

    Pathirane, M.; Iheanacho, B.; Tamang, A.; Lee, C.-H.; Lujan, R.; Knipp, D.; Wong, W. S.

    2015-10-01

    Hydrothermally synthesized disordered ZnO nanowires were conformally coated with a-Si:H thin-films to fabricate three dimensional hybrid nanowire/thin-film structures. The a-Si:H layer formed a radial junction p-i-n diode solar cell around the ZnO nanowire. The cylindrical hybrid solar cells enhanced light scattering throughout the UV-visible-NIR spectrum (300 nm-800 nm) resulting in a 22% increase in short-circuit current density compared to the reference planar p-i-n device. A fill factor of 69% and a total power conversion efficiency of 6.5% were achieved with the hybrid nanowire solar cells using a spin-on indium tin oxide nanoparticle suspension as the top contact.

  20. Hybrid ZnO nanowire/a-Si:H thin-film radial junction solar cells using nanoparticle front contacts

    SciTech Connect

    Pathirane, M. Iheanacho, B.; Lee, C.-H.; Wong, W. S.; Tamang, A.; Knipp, D.; Lujan, R.

    2015-10-05

    Hydrothermally synthesized disordered ZnO nanowires were conformally coated with a-Si:H thin-films to fabricate three dimensional hybrid nanowire/thin-film structures. The a-Si:H layer formed a radial junction p-i-n diode solar cell around the ZnO nanowire. The cylindrical hybrid solar cells enhanced light scattering throughout the UV-visible-NIR spectrum (300 nm–800 nm) resulting in a 22% increase in short-circuit current density compared to the reference planar p-i-n device. A fill factor of 69% and a total power conversion efficiency of 6.5% were achieved with the hybrid nanowire solar cells using a spin-on indium tin oxide nanoparticle suspension as the top contact.

  1. High efficiency thin film CdTe and a-Si based solar cells

    SciTech Connect

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2000-01-04

    This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10

  2. Al Thermal Diffusion in a-Si1-xCx:H Thin Film Studied by XAFS

    SciTech Connect

    Prado, R. J.; Carreno, M. N. P.; Pereyra, I.

    2007-02-02

    In this work the local structure around the aluminium atoms, diffused by thermal annealing in a-SiC:H thin films was analyzed by x-ray absorption near edge structure (XANES), aiming to obtain information about the Al ordering after annealing. The thermal annealing of the films was performed in ultra high-vacuum (UHV), in order to avoid Al oxidation. The XANES spectra were obtained in-situ at the Al K-edge (1559 eV), immediately after the annealing process, showing that Al diffusion clearly takes place for carbon rich films. The theoretical simulation of these spectra shows that the Al in carbon rich a-SiC:H has structural order similar to that of c-Al4C3.

  3. Al Thermal Diffusion in a-Si1-xCx:H Thin Film Studied by XAFS

    NASA Astrophysics Data System (ADS)

    Prado, R. J.; Fantini, M. C. A.; Carreño, M. N. P.; Pereyra, I.; Flank, A. M.

    2007-02-01

    In this work the local structure around the aluminium atoms, diffused by thermal annealing in a-SiC:H thin films was analyzed by x-ray absorption near edge structure (XANES), aiming to obtain information about the Al ordering after annealing. The thermal annealing of the films was performed in ultra high-vacuum (UHV), in order to avoid Al oxidation. The XANES spectra were obtained in-situ at the Al K-edge (1559 eV), immediately after the annealing process, showing that Al diffusion clearly takes place for carbon rich films. The theoretical simulation of these spectra shows that the Al in carbon rich a-SiC:H has structural order similar to that of c-Al4C3.

  4. Using SiOx nano-films to enhance GZO Thin films properties as front electrodes of a-Si solar cells

    NASA Astrophysics Data System (ADS)

    Chang, Kow-Ming; Ho, Po-Ching; Yu, Shu-Hung; Hsu, Jui-Mei; Yang, Kuo-Hui; Wu, Chin-Jyi; Chang, Chia-Chiang

    2013-07-01

    One of the essential applications of transparent conductive oxides is as front electrodes for superstrate silicon thin-film solar cells. Textured TCO thin films can improve absorption of sunlight for an a-Si:H absorber during a single optical path. In this study, high-haze and low-resistivity bilayer GZO/SiOx thin films prepared using an atmospheric pressure plasma jet (APPJ) deposition technique and dc magnetron sputtering. The silicon subdioxide nano-film plays an important role in controlling the haze value of subsequent deposited GZO thin films. The bilayer GZO/SiOx (90 sccm) sample has the highest haze value (22.30%), the lowest resistivity (8.98 × 10-4 Ω cm), and reaches a maximum cell efficiency of 6.85% (enhanced by approximately 19% compared to a sample of non-textured GZO).

  5. Investigation of the vertical electrical transport in a-Si:H/nc-Si:H superlattice thin films.

    PubMed

    Das, Debajyoti; Kar, Debjit

    2015-07-14

    Tuning the size of silicon nano-crystallites (Si-ncs) has been realized simply by controlling the thickness of the nc-Si:H sub-layer (tnc) in the a-Si:H/nc-Si:H superlattice thin films grown by low temperature plasma processing in PE-CVD. The vertical electrical transport phenomena accomplished in superlattice films have been investigated in order to identify their effective utilization in practical device configuration. The reduced size of the Si-ncs at thinner tnc and the associated band gap widening due to quantum confinement effects generates the Coulomb potential barrier at the a-Si/nc-Si interface which in turn obstructs the transport of charge carriers to the allowed energy states in Si-ncs, leading to the Poole-Frenkel tunneling as the prevailing charge transport mechanism in force. The advantages of the conduction process governed by the Poole-Frenkel mechanism are two-fold. The lower barrier height caused by the a-Si:H sub-layer in the superlattice than the silicon oxide sub-layer in conventional structures enhances the conduction current. Moreover, increasing trapped charges in the a-Si:H sub-layer can arbitrarily increase the current conduction. Accordingly, a-Si:H/nc-Si:H superlattice structures could provide superior electrical transport in stacked layer devices e.g., multi-junction all silicon solar cells.

  6. Persistent photoconductivity studies in a-Si:H/nc-Si:H thin film superlattices

    NASA Astrophysics Data System (ADS)

    Yadav, Asha; Agarwal, Pratima

    2015-09-01

    The electronic properties of undoped a-Si:H/nc-Si:H superlattice structures have been investigated by photoconductivity measurements. Multilayer structures having alternate layers of a-Si:H and nc-Si:H were deposited on corning 1737 glass substrate by Hot wire chemical vapor deposition technique, keeping the total thickness of films constant at 700 nm. Dark and photo conductivity along with persistent photoconductivity (PPC) are measured in coplanar geometry using Ag paste as electrodes. Quite interestingly room temperature PPC has been observed in these undoped a-Si:H/nc-Si:H superlattice structures. PPC decay time constant, its dependence on exposure time, electric field, number of periods and annealing temperature have been studied in detail. The origin of PPC is understood in terms of competition between carriers transport in the lateral direction due to external field and along the depth due to band bending at a-Si:H/nc-Si:H interfaces. Carriers trapped in the interfaces states or the separation of carriers due to band bending are likely to be responsible for observed PPC.

  7. Characterization of ion-assisted induced absorption in A-Si thin-films used for multivariate optical computing

    NASA Astrophysics Data System (ADS)

    Nayak, Aditya B.; Price, James M.; Dai, Bin; Perkins, David; Chen, Ding Ding; Jones, Christopher M.

    2015-06-01

    Multivariate optical computing (MOC), an optical sensing technique for analog calculation, allows direct and robust measurement of chemical and physical properties of complex fluid samples in high-pressure/high-temperature (HP/HT) downhole environments. The core of this MOC technology is the integrated computational element (ICE), an optical element with a wavelength-dependent transmission spectrum designed to allow the detector to respond sensitively and specifically to the analytes of interest. A key differentiator of this technology is it uses all of the information present in the broadband optical spectrum to determine the proportion of the analyte present in a complex fluid mixture. The detection methodology is photometric in nature; therefore, this technology does not require a spectrometer to measure and record a spectrum or a computer to perform calculations on the recorded optical spectrum. The integrated computational element is a thin-film optical element with a specific optical response function designed for each analyte. The optical response function is achieved by fabricating alternating layers of high-index (a-Si) and low-index (SiO2) thin films onto a transparent substrate (BK7 glass) using traditional thin-film manufacturing processes (e.g., ion-assisted e-beam vacuum deposition). A proprietary software and process are used to control the thickness and material properties, including the optical constants of the materials during deposition to achieve the desired optical response function. The ion-assisted deposition is useful for controlling the densification of the film, stoichiometry, and material optical constants as well as to achieve high deposition growth rates and moisture-stable films. However, the ion-source can induce undesirable absorption in the film; and subsequently, modify the optical constants of the material during the ramp-up and stabilization period of the e-gun and ion-source, respectively. This paper characterizes the unwanted

  8. Absorption enhancement in thin film a-Si solar cells with double-sided SiO2 particle layers

    NASA Astrophysics Data System (ADS)

    Chen, Le; Wang, Qing-Kang; Shen, Xiang-Qian; Chen, Wen; Huang, Kun; Liu, Dai-Ming

    2015-10-01

    Light absorption enhancement is very important for improving the power conversion efficiency of a thin film a-Si solar cell. In this paper, a thin-film a-Si solar cell model with double-sided SiO2 particle layers is designed, and then the underlying mechanism of absorption enhancement is investigated by finite difference time domain (FDTD) simulation; finally the feasible experimental scheme for preparing the SiO2 particle layer is discussed. It is found that the top and bottom SiO2 particle layers play an important role in anti-reflection and light trapping, respectively. The light absorption of the cell with double-sided SiO2 layers greatly increases in a wavelength range of 300 nm-800 nm, and the ultimate efficiency increases more than 22% compared with that of the flat device. The cell model with double-sided SiO2 particle layers reported here can be used in varieties of thin film solar cells to further improve their performances. Project supported by the National High-Tech Research and Development Program of China (Grant No. 2011AA050518), the University Research Program of Guangxi Education Department, China (Grant No. LX2014288), and the Natural Science Foundation of Guangxi Zhuang Autonomous Region, China (Grant No. 2013GXNSBA019014).

  9. Mechanical Properties of ZTO, ITO, and a-Si:H Multilayer Films for Flexible Thin Film Solar Cells

    PubMed Central

    Hengst, Claudia; Menzel, Siegfried B; Rane, Gayatri K; Smirnov, Vladimir; Wilken, Karen; Leszczynska, Barbara; Fischer, Dustin; Prager, Nicole

    2017-01-01

    The behavior of bi- and trilayer coating systems for flexible a-Si:H based solar cells consisting of a barrier, an electrode, and an absorption layer is studied under mechanical load. First, the film morphology, stress, Young’s modulus, and crack onset strain (COS) were analyzed for single film coatings of various thickness on polyethylene terephthalate (PET) substrates. In order to demonstrate the role of the microstructure of a single film on the mechanical behavior of the whole multilayer coating, two sets of InSnOx (indium tin oxide, ITO) conductive coatings were prepared. Whereas a characteristic grain–subgrain structure was observed in ITO-1 films, grain growth was suppressed in ITO-2 films. ITO-1 bilayer coatings showed two-step failure under tensile load with cracks propagating along the ITO-1/a-Si:H-interface, whereas channeling cracks in comparable bi- and trilayers based on amorphous ITO-2 run through all constituent layers. A two-step failure is preferable from an application point of view, as it may lead to only a degradation of the performance instead of the ultimate failure of the device. Hence, the results demonstrate the importance of a fine-tuning of film microstructure not only for excellent electrical properties, but also for a high mechanical performance of flexible devices (e.g., a-Si:H based solar cells) during fabrication in a roll-to-roll process or under service. PMID:28772609

  10. Mechanical Properties of ZTO, ITO, and a-Si:H Multilayer Films for Flexible Thin Film Solar Cells.

    PubMed

    Hengst, Claudia; Menzel, Siegfried B; Rane, Gayatri K; Smirnov, Vladimir; Wilken, Karen; Leszczynska, Barbara; Fischer, Dustin; Prager, Nicole

    2017-03-01

    The behavior of bi- and trilayer coating systems for flexible a-Si:H based solar cells consisting of a barrier, an electrode, and an absorption layer is studied under mechanical load. First, the film morphology, stress, Young's modulus, and crack onset strain (COS) were analyzed for single film coatings of various thickness on polyethylene terephthalate (PET) substrates. In order to demonstrate the role of the microstructure of a single film on the mechanical behavior of the whole multilayer coating, two sets of InSnOx (indium tin oxide, ITO) conductive coatings were prepared. Whereas a characteristic grain-subgrain structure was observed in ITO-1 films, grain growth was suppressed in ITO-2 films. ITO-1 bilayer coatings showed two-step failure under tensile load with cracks propagating along the ITO-1/a-Si:H-interface, whereas channeling cracks in comparable bi- and trilayers based on amorphous ITO-2 run through all constituent layers. A two-step failure is preferable from an application point of view, as it may lead to only a degradation of the performance instead of the ultimate failure of the device. Hence, the results demonstrate the importance of a fine-tuning of film microstructure not only for excellent electrical properties, but also for a high mechanical performance of flexible devices (e.g., a-Si:H based solar cells) during fabrication in a roll-to-roll process or under service.

  11. Patterning of Transparent Conducting Oxide Thin Films by Wet Etching for a-Si:H TFT-LCDs

    SciTech Connect

    Lan, J. H.; Kanicki, J.; Catalano, A.; Keane, J.; Den Boer, W.; Gu, T.

    1996-12-01

    The patterning characteristics of the indium tin oxide (ITO) thin films having different microstructures were investigated. Several etching solutions (HCl, HBr, and their mixtures with HNO3) were used in this study. We have found that ITO films containing a larger volume fraction of the amorphous phase show higher etch rates than those containing a larger volume fraction of the crystalline phase. Also, the crystalline ITO fims have shown a very good uniformity in patterning, and following the etching no ITO residue (unetched ITO) formation has been observed. In contrast, ITO residues were found after the etching of the films containing both amorphous and crystalline phases. We have also developed a process for the fabrication of the ITO with a tapered edge profile. The taper angle can be controlled by varying the ratio of HNO3 to the HCl in the etching solutions. Finally, ITO films have been found to be chemically unstable in a hydrogen containing plasma environment. On the contrary, aluminum doped zinc oxide (AZO) films, having an optical transmittance and electrical resisitivity comparable to ITO films, are very stable in the same hydrogen containing plasma environment. In addition, a high etch rate, no etching residue formation, and a uniform etching have been found for the AZO films, which make them suitable for a-Si:H TFT-LCD applications.

  12. Etching of a-Si:H thin films by hydrogen plasma: a view from in situ spectroscopic ellipsometry.

    PubMed

    Hadjadj, Aomar; Larbi, Fadila; Gilliot, Mickaël; Roca i Cabarrocas, Pere

    2014-08-28

    When atomic hydrogen interacts with hydrogenated amorphous silicon (a-Si:H), the induced modifications are of crucial importance during a-Si:H based devices manufacturing or processing. In the case of hydrogen plasma, the depth of the modified zone depends not only on the plasma processing parameters but also on the material. In this work, we exposed a-Si:H thin films to H2 plasma just after their deposition. In situ UV-visible spectroscopic ellipsometry measurements were performed to track the H-induced changes in the material. The competition between hydrogen insertion and silicon etching leads to first order kinetics in the time-evolution of the thickness of the H-modified zone. We analyzed the correlation between the steady state structural parameters of the H-modified layer and the main levers that control the plasma-surface interaction. In comparison with a simple doped layer, exposure of a-Si:H based junctions to the same plasma treatment leads to a thinner H-rich subsurface layer, suggesting a possible charged state of hydrogen diffusing.

  13. a-SiCxNy:H thin films for applications in solar cells as passivation and antireflective coatings

    NASA Astrophysics Data System (ADS)

    Swatowska, Barbara; Kluska, Stanisława; Lewińska, Gabriela; Golańska, Julia; Stapiński, Tomasz

    2016-12-01

    Amorphous a-SiCxNy:H thin films may be an alternative to a-Si:N:H coatings which are commonly used in silicon solar cells. This material was obtained by PECVD (13.56 MHz) method. The reaction gases used: silane, methane, nitrogen and ammonia. The structure of the layers were investigated by scanning electron microscopy (SEM) and infrared spectroscopy (FTIR). IR absorption spectra of a-SiCxNy:H layers confirmed the presence of various hydrogen bonds - it is important for passivation of Si structural defects. The ellipsometric measurements were implemented to determine the thickness of layers d, refractive index n, extinction coefficient k and energy gap Eg. The values of the energy gap of a-SiCxNy:H layers are in the range from 1.89 to 4.34 eV. The correlation between energy gap of materials and refractive index was found. Generally the introduction of N and/or C into the amorphous silicon network rapidly increases the Eg values.

  14. Behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic modules under outdoor long term exposure

    PubMed Central

    Kichou, Sofiane; Silvestre, Santiago; Nofuentes, Gustavo; Torres-Ramírez, Miguel; Chouder, Aissa; Guasch, Daniel

    2016-01-01

    Four years׳ behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic (PV) modules installed in a relatively dry and sunny inland site with a Continental-Mediterranean climate (in the city of Jaén, Spain) are presented in this article. The shared data contributes to clarify how the Light Induced Degradation (LID) impacts the output power generated by the PV array, especially in the first days of exposure under outdoor conditions. Furthermore, a valuable methodology is provided in this data article permitting the assessment of the degradation rate and the stabilization period of the PV modules. Further discussions and interpretations concerning the data shared in this article can be found in the research paper “Characterization of degradation and evaluation of model parameters of amorphous silicon photovoltaic modules under outdoor long term exposure” (Kichou et al., 2016) [1]. PMID:26977439

  15. Behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic modules under outdoor long term exposure.

    PubMed

    Kichou, Sofiane; Silvestre, Santiago; Nofuentes, Gustavo; Torres-Ramírez, Miguel; Chouder, Aissa; Guasch, Daniel

    2016-06-01

    Four years׳ behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic (PV) modules installed in a relatively dry and sunny inland site with a Continental-Mediterranean climate (in the city of Jaén, Spain) are presented in this article. The shared data contributes to clarify how the Light Induced Degradation (LID) impacts the output power generated by the PV array, especially in the first days of exposure under outdoor conditions. Furthermore, a valuable methodology is provided in this data article permitting the assessment of the degradation rate and the stabilization period of the PV modules. Further discussions and interpretations concerning the data shared in this article can be found in the research paper "Characterization of degradation and evaluation of model parameters of amorphous silicon photovoltaic modules under outdoor long term exposure" (Kichou et al., 2016) [1].

  16. Nanoimprinted backside reflectors for a-Si:H thin-film solar cells: critical role of absorber front textures.

    PubMed

    Tsao, Yao-Chung; Fisker, Christian; Pedersen, Thomas Garm

    2014-05-05

    The development of optimal backside reflectors (BSRs) is crucial for future low cost and high efficiency silicon (Si) thin-film solar cells. In this work, nanostructured polymer substrates with aluminum coatings intended as BSRs were produced by positive and negative nanoimprint lithography (NIL) techniques, and hydrogenated amorphous silicon (a-Si:H) was deposited hereon as absorbing layers. The relationship between optical properties and geometry of front textures was studied by combining experimental reflectance spectra and theoretical simulations. It was found that a significant height variation on front textures plays a critical role for light-trapping enhancement in solar cell applications. As a part of sample preparation, a transfer NIL process was developed to overcome the problem of low heat deflection temperature of polymer substrates during solar cell fabrication.

  17. ZnO/a-Si distributed Bragg reflectors for light trapping in thin film solar cells from visible to infrared range

    NASA Astrophysics Data System (ADS)

    Chen, Aqing; Yuan, Qianmin; Zhu, Kaigui

    2016-01-01

    Distributed Bragg reflectors (DBRs) consisting of ZnO and amorphous silicon (a-Si) were prepared by magnetron sputtering method for selective light trapping. The quarter-wavelength ZnO/a-Si DBRs with only 6 periods exhibit a peak reflectance of above 99% and have a full width at half maximum that is greater than 347 nm in the range of visible to infrared. The 6-pair reversed quarter-wavelength ZnO/a-Si DBRs also have a peak reflectance of 98%. Combination of the two ZnO/a-Si DBRs leads to a broader stopband from 686 nm to 1354 nm. Using the ZnO/a-Si DBRs as the rear reflector of a-Si thin film solar cells significantly increases the photocurrent in the spectrum range of 400⿿1000 nm, in comparison with that of the cells with Al reflector. The obtained results suggest that ZnO/a-Si DBRs are promising reflectors of a-Si thin-film solar cells for light trapping.

  18. Fabrication of Source/Drain Electrodes for a-Si:H Thin-Film Transistors Using a Single Cu Alloy Target

    NASA Astrophysics Data System (ADS)

    Lee, J. H.; Lee, C. Y.; Nam, H. S.; Lee, J. G.; Yang, H. J.; Ho, W. J.; Jeong, J. Y.; Koo, D. H.

    2011-11-01

    A Cu alloy/Cu alloy oxide bilayer structure was formed on an n +-a-Si:H substrate using a single Cu alloy target. It was employed for the source/drain electrodes in the fabrication of a-Si:H thin-film transistors with good electrical performance, high thermal stability, and good adhesion. Transmission electron microscopy and electron energy-loss spectroscopy analyses revealed that the initial sputtering of the Cu alloy in O2/Ar allowed for preferential oxidation of Si and the formation of a SiO x /Cu-supersaturated a-Si:H bilayer at the copper oxide-a-Si:H interface. This bilayer turned into an SiO x /Cu3Si bilayer after annealing at 300°C. It provided a stable contact structure with low contact resistance.

  19. Half-Corbino short-channel amorphous In-Ga-Zn-O thin-film transistors with a-SiOx or a-SiOx/a-SiNx passivation layers

    NASA Astrophysics Data System (ADS)

    Zhao, Chumin; Fung, Tze-Ching; Kanicki, Jerzy

    2016-06-01

    We investigated the electrical properties and stability of short-channel half-Corbino amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). In the linear region, the fabricated half-Corbino a-IGZO TFT with a channel length of 4.5 μm achieves a geometrical factor (fg) of ∼2.7, a threshold voltage (VT) of ∼2.4 V, a field-effect mobility (μeff) of ∼15 cm2/Vs, a subthreshold swing (SS) of ∼320 mV/dec and an off-current (IOFF) < 10-13 A. In the saturation region, asymmetric electrical characteristics such as drain current were observed under different drain bias conditions. The electrical properties asymmetry of half-Corbino a-IGZO TFTs was explained by various geometrical factors owing to the short-channel effect. The reduced VT and increased SS at VDS = 15 V is explained by the drain-induced Schottky barrier lowering. In addition, the bias-temperature stress (BTS) was performed for half-Corbino a-IGZO TFTs with both amorphous silicon oxide (a-SiOx) single layer and a-SiOx/amorphous silicon nitride (a-SiNx) bilayer passivation (PV) structures. The device with bilayer PV shows a threshold voltage shift (ΔVT) of +2.07 and -0.5 V under positive (PBTS = +15 V) and negative BTS (NBTS = -15 V) at 70 °C for 10 ks, respectively. The origins of ΔVT during PBTS and NBTS for half-Corbino a-IGZO TFTs with single and bilayer PV structures were studied. To improve the device electrical stability, the bilayer PV structure should be used.

  20. Manipulating hybrid structures of polymer/a-Si for thin film solar cells

    NASA Astrophysics Data System (ADS)

    Peng, Ying; He, Zhiqun; Diyaf, Adel; Ivaturi, Aruna; Zhang, Zhi; Liang, Chunjun; Wilson, John I. B.

    2014-03-01

    A series of uniform polymer/amorphous silicon hybrid structures have been fabricated by means of solution-casting for polymer and radio frequency excited plasma enhanced chemical vapour deposition for amorphous silicon (a-Si:H). Poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) functioned as a photoactive donor, while the silicon layer acted as an acceptor. It is found that matching the hole mobility of the polymer to the electron mobility of amorphous silicon is critical to improve the photovoltaic performance from hybrid cells. A three-layer p-i-n structure of ITO/PEDOT:PSS(200 nm)/i-Si(450 nm)/n-Si(200 nm)/Al with a power conversion efficiency of 4.78% under a standard test condition was achieved.

  1. Manipulating hybrid structures of polymer/a-Si for thin film solar cells

    SciTech Connect

    Peng, Ying; He, Zhiqun E-mail: J.I.B.Wilson@hw.ac.uk; Zhang, Zhi; Liang, Chunjun; Diyaf, Adel; Ivaturi, Aruna; Wilson, John I. B. E-mail: J.I.B.Wilson@hw.ac.uk

    2014-03-10

    A series of uniform polymer/amorphous silicon hybrid structures have been fabricated by means of solution-casting for polymer and radio frequency excited plasma enhanced chemical vapour deposition for amorphous silicon (a-Si:H). Poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) functioned as a photoactive donor, while the silicon layer acted as an acceptor. It is found that matching the hole mobility of the polymer to the electron mobility of amorphous silicon is critical to improve the photovoltaic performance from hybrid cells. A three-layer p-i-n structure of ITO/PEDOT:PSS(200 nm)/i-Si(450 nm)/n-Si(200 nm)/Al with a power conversion efficiency of 4.78% under a standard test condition was achieved.

  2. Tin induced a-Si crystallization in thin films of Si-Sn alloys

    SciTech Connect

    Neimash, V. E-mail: oleks.goushcha@nuportsoft.com; Poroshin, V.; Goushcha, A. O. E-mail: oleks.goushcha@nuportsoft.com; Shepeliavyi, P.; Yukhymchuk, V.; Melnyk, V.; Kuzmich, A.; Makara, V.

    2013-12-07

    Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (2–4 nm in size) in the amorphous matrix of Si{sub 1−x}Sn{sub x}, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300 °C. The aggregate volume of nanocrystals in the deposited film of Si{sub 1−x}Sn{sub x} exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ∼80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer.

  3. Simulated and Real Sheet-of-Light 3D Object Scanning Using a-Si:H Thin Film PSD Arrays.

    PubMed

    Contreras, Javier; Tornero, Josep; Ferreira, Isabel; Martins, Rodrigo; Gomes, Luis; Fortunato, Elvira

    2015-11-30

    A MATLAB/SIMULINK software simulation model (structure and component blocks) has been constructed in order to view and analyze the potential of the PSD (Position Sensitive Detector) array concept technology before it is further expanded or developed. This simulation allows changing most of its parameters, such as the number of elements in the PSD array, the direction of vision, the viewing/scanning angle, the object rotation, translation, sample/scan/simulation time, etc. In addition, results show for the first time the possibility of scanning an object in 3D when using an a-Si:H thin film 128 PSD array sensor and hardware/software system. Moreover, this sensor technology is able to perform these scans and render 3D objects at high speeds and high resolutions when using a sheet-of-light laser within a triangulation platform. As shown by the simulation, a substantial enhancement in 3D object profile image quality and realism can be achieved by increasing the number of elements of the PSD array sensor as well as by achieving an optimal position response from the sensor since clearly the definition of the 3D object profile depends on the correct and accurate position response of each detector as well as on the size of the PSD array.

  4. Simulated and Real Sheet-of-Light 3D Object Scanning Using a-Si:H Thin Film PSD Arrays

    PubMed Central

    Contreras, Javier; Tornero, Josep; Ferreira, Isabel; Martins, Rodrigo; Gomes, Luis; Fortunato, Elvira

    2015-01-01

    A MATLAB/SIMULINK software simulation model (structure and component blocks) has been constructed in order to view and analyze the potential of the PSD (Position Sensitive Detector) array concept technology before it is further expanded or developed. This simulation allows changing most of its parameters, such as the number of elements in the PSD array, the direction of vision, the viewing/scanning angle, the object rotation, translation, sample/scan/simulation time, etc. In addition, results show for the first time the possibility of scanning an object in 3D when using an a-Si:H thin film 128 PSD array sensor and hardware/software system. Moreover, this sensor technology is able to perform these scans and render 3D objects at high speeds and high resolutions when using a sheet-of-light laser within a triangulation platform. As shown by the simulation, a substantial enhancement in 3D object profile image quality and realism can be achieved by increasing the number of elements of the PSD array sensor as well as by achieving an optimal position response from the sensor since clearly the definition of the 3D object profile depends on the correct and accurate position response of each detector as well as on the size of the PSD array. PMID:26633403

  5. Synthesis of TiN/a-Si3N4 thin film by using a Mather type dense plasma focus system

    NASA Astrophysics Data System (ADS)

    Hussain, T.; R., Ahmad; Khalid, N.; A. Umar, Z.; Hussnain, A.

    2013-05-01

    A 2.3 kJ Mather type pulsed plasma focus device was used for the synthesis of a TiN/a-Si3N4 thin film at room temperature. The film was characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The XRD pattern confirms the growth of polycrystalline TiN thin film. The XPS results indicate that the synthesized film is non-stoichiometric and contains titanium nitride, silicon nitride, and a phase of silicon oxy-nitride. The SEM and AFM results reveal that the surface of the synthesized film is quite smooth with 0.59 nm roughness (root-mean-square).

  6. Preparation of born-doped a-SiC:H thin films by ICP-CVD method and to the application of large-area heterojunction solar cells.

    PubMed

    Jeong, Chaehwan; Kim, Young-Back; Lee, Suk-Ho; Kim, Jin Hyeok

    2010-05-01

    Hydrogenated amorphous silicon carbide (a-SiC:H) film has been widely used as an emitter p layer in solar cells. For the better p layer, wide optical bandgap, and high electrical conductivity should be obtained from the effective method. We prepared the boron-doped a-SiC:H thin films using inductively coupled plasma chemical vapor deposition (ICP-CVD) method and characteristics on the small-area (2 cm x 2 cm) as well as the large-area films (diameter of 100 mm) were shown on it. As a substrate, the n-type (100) oriented CZ c-Si (5.5 approximately 6.5 omega x cm, 650 microm) wafers were used and cleaned by using the reduced RCA method. A silane (SiH4) of 99.999% purity, H2 and 60% hydrogen diluted ethylene (C2H4) was used as source gas for the deposition of intrinsic a-SiC:H films, and then diborane (B2H6), as the doping gas, is added to C2H4 and SiH4/H2 during the deposition of films. The uniformity of thickness and optical bandgap from large-area as-dep. films was at 1.8% and 0.3%, respectively. Heterojunction solar cell with 2 wt%-AZO/p-a-SiC:H/i-a-Si:H/c-Si/Ag structure was fabricated and characterized with diameter of 152.3 mm in this large-area ICP-CVD system. Conversion efficiency of 9.123% was achieved with a practical area of 100 mm x 100 mm, which can show the potentials to the fabrication of the large-area solar cell using ICP-CVD method.

  7. On the way to enhance the optical absorption of a-Si in NIR by embedding Mg{sub 2}Si thin film

    SciTech Connect

    Chernev, I. M. Shevlyagin, A. V.; Galkin, K. N.; Stuchlik, J.; Fajgar, R.; Galkin, N. G.

    2016-07-25

    Mg{sub 2}Si thin film was embedded in amorphous silicon matrix by solid phase epitaxy. The structure and optical properties were investigated by electron energy loss, X-ray photoelectron, Raman, and photo thermal deflection spectroscopy measurements. It was found that in the photon energy range of 0.8–1.7 eV, the light absorption of the structure with magnesium silicide (Mg{sub 2}Si) film embedded in a-Si(i) matrix is 1.5 times higher than that for the same structure without Mg{sub 2}Si.

  8. Spectroscopic and microscopic studies of self-assembled nc-Si/a-SiC thin films grown by low pressure high density spontaneous plasma processing.

    PubMed

    Das, Debajyoti; Kar, Debjit

    2014-12-14

    In view of suitable applications in the window layer of nc-Si p-i-n solar cells in superstrate configuration, the growth of nc-Si/a-SiC composite films was studied, considering the trade-off relation between individual characteristics of its a-SiC component to provide a wide optical-gap and electrically conducting nc-Si component to simultaneously retain enough crystalline linkages to facilitate proper crystallization to the i-nc-Si absorber-layer during its subsequent growth. Self-assembled nc-Si/a-SiC thin films were spontaneously grown by low-pressure planar inductively coupled plasma CVD, operating in electromagnetic mode, providing high atomic-H density. Spectroscopic simulations of ellipsometry and Raman data, and systematic chemical and structural analysis by XPS, TEM, SEM and AFM were performed. Corresponding to optimized inclusion of C essentially incorporated as Si-C bonds in the network, the optical-gap of the a-SiC component widened, void fraction including the incubation layer thickness reduced. While the bulk crystallinity decreased only marginally, Si-ncs diminished in size with narrower distribution and increased number density. With enhanced C-incorporation, formation of C-C bonds in abundance deteriorates the Si continuous bonding network and persuades growth of an amorphous dominated silicon-carbon heterostructure containing high-density tiny Si-ncs. Stimulated nanocrystallization identified in the Si-network, induced by a limited amount of carbon incorporation, makes the material most suitable for applications in nc-Si solar cells. The novelty of the present work is to enable spontaneous growth of self-assembled superior quality nc-Si/a-SiC thin films and simultaneous spectroscopic simulation-based optimization of properties for utilization in devices.

  9. Characterization of a-SiCx:H thin films as an encapsulation material for integrated silicon based neural interface devices

    PubMed Central

    Hsu, Jui-Mei; Tathireddy, Prashant; Rieth, Loren; Normann, A. Richard; Solzbacher, Florian

    2008-01-01

    A fully integrated, wireless neural interface device is being developed to free patients from the restriction and risk of infection associated with a transcutaneous wired connection. This device requires a hermetic, biocompatible encapsulation layer at the interface between the device and the neural tissue to maintain long-term recording/stimulating performance of the device. Hydrogenated amorphous silicon carbide (a-SiCx:H) films deposited by a plasma enhanced chemical vapor deposition using SiH4, CH4, and H2 precursors were investigated as the encapsulation layer for such device. Si-C bond density, measured by Fourier transform infrared absorption spectrometer, suggests that deposition conditions with increased hydrogen dilution, increased temperature, and low silane flow typically result in increase of Si-C bond density. From the variable angle spectroscopic ellipsometry measurement, no dissolution of a-SiCx:H was observed during soaking tests in 90°C phosphate buffered saline. Conformal coating of the a-SiCx:H in Utah electrode array was observed by scanning electron microscope. Electrical properties were studied by impedance spectroscopy to investigate the performance of a-SiCx:H as an encapsulation layer, and the results showed long term stability of the material. PMID:18437249

  10. Fundamental properties of a-SiNx:H thin films deposited by ICP-PECVD for MEMS applications

    NASA Astrophysics Data System (ADS)

    Dergez, D.; Schalko, J.; Bittner, A.; Schmid, U.

    2013-11-01

    In this study, the impact of deposition conditions on the properties of amorphous hydrogenated silicon nitride (a-SiNx:H) films using an inductively coupled plasma enhanced chemical vapor deposition technique (ICP-CVD) is evaluated. Due to the large number of experiments - even when taking only the most important synthesization parameters into account such as the total pressure in the deposition chamber, the substrate temperature, the ICP power and the flow rate ratio of N2/SiH4 - a design of experiments-based approach is chosen. As expected, the deposition rate strongly depends on the ICP power and the N2/SiH4 flow rate ratio, respectively. Films in the field of investigation deposited with a high flow rate of N2 labeled as Type I show relatively low mechanical stress values between -50 and +200 MPa, but exhibit a strong drift behavior toward compressive stress. Layers deposited at low nitrogen flow rates (Type II), however, yield large compressive stress and are stable as a function of time. The wet etch rate in hydrofluoric acid shows a gap of over two orders of magnitude when comparing the two a-SiNx:H types, indicating strong differences in the chemical composition. Fourier-transform infrared measurements demonstrate that in Type I films the hydrogen is mainly bonded to nitrogen, in contrast to Type II films, where Si-H bonds dominate. Surface related X-ray photoelectron spectroscopy measurements show that Type II layers have higher relative silicon content, while depth profiles yield that the oxygen content Type I films is above 10 at.%. This high oxygen content is proposed to be the result of diffusion of H2O into the layer, causing oxidation, and, as a consequence, the drifting behavior of the intrinsic film stress.

  11. Investigation of the effect of anodization time and annealing temperature on the physical properties of ZrO2 thin film on a Si substrate

    NASA Astrophysics Data System (ADS)

    Goh, Kian Heng; Lee, Hui Jing; Lau, Sze Kuan; Chiew Teh, Pei; Ramesh, S.; Tan, Chou Yong; Hoong Wong, Yew

    2017-08-01

    This research work studied the effects of various anodization times (5, 10, 15, 20 and 25 min) and various annealing temperatures (500, 600, 700, 800 and 900 °C) on ZrO2 thin film on a Si substrate. The ZrO2 thin film was prepared via sputtering and anodization processes on a Si substrate. The existence of Si, SiO2, m-ZrO2, t-ZrO2 and ZrSiO4 was confirmed by x-ray diffraction, Fourier transform infrared microscopy and Raman spectroscopy. In addition, NaOH was observed as a residue on the surface of the thin film. The grain size and microstrain of both m-ZrO2, and t-ZrO2 were calculated using the Williamson-Hall and/or Scherrer equation. The morphology of samples was examined by scanning electron microscopy. In contrast to unannealed samples, the annealed samples have a smaller grain size, less NaOH, and SiO2 with a smoother surface. However, the SiO2 existed when being annealed at higher temperatures (⩾800 °C).

  12. Analysis of poly-Si thin film p^+-n-n+ homojunction solar cell and heterojunction solar cell with and without a thin μc-Si layer at the interface of a-Si and poly-Si layers

    NASA Astrophysics Data System (ADS)

    Letha, A. J.; Hwang, H. L.

    2009-05-01

    In this study, new possibilities for higher efficiency poly-Si thin film solar cells are investigated using MEDICI^TM device simulator. The poly-Si p^+-n-n+ thin film solar cell with a thin a-Si p+ layer is found to have higher efficiency than the homojunction p^+-n-n+ cell. Further improvement in efficiency of the heterojunction p^+-n-n+ cell is achieved by introducing a thin μc-Si layer at the interface of a-Si emitter and poly-Si absorber layers. The μc-Si layer at the interface is found to reduce the recombination losses at the interface and improved the fill factor and efficiency of the cell. The photovoltaic parameters of the cell and the absorber layer thickness for optimum efficiency are highly influenced by grain size and passivation at the grain boundary.

  13. Spectroscopic Ellipsometry Studies of Thin Film a-Si:H/nc-Si:H Micromorph Solar Cell Fabrication in the p-i-n Superstrate Configuration

    NASA Astrophysics Data System (ADS)

    Huang, Zhiquan

    Spectroscopic ellipsometry (SE) is a non-invasive optical probe that is capable of accurately and precisely measuring the structure of thin films, such as their thicknesses and void volume fractions, and in addition their optical properties, typically defined by the index of refraction and extinction coefficient spectra. Because multichannel detection systems integrated into SE instrumentation have been available for some time now, the data acquisition time possible for complete SE spectra has been reduced significantly. As a result, real time spectroscopic ellipsometry (RTSE) has become feasible for monitoring thin film nucleation and growth during the deposition of thin films as well as during their removal in processes of thin film etching. Also because of the reduced acquisition time, mapping SE is possible by mounting an SE instrument with a multichannel detector onto a mechanical translation stage. Such an SE system is capable of mapping the thin film structure and its optical properties over the substrate area, and thereby evaluating the spatial uniformity of the component layers. In thin film photovoltaics, such structural and optical property measurements mapped over the substrate area can be applied to guide device optimization by correlating small area device performance with the associated local properties. In this thesis, a detailed ex-situ SE study of hydrogenated amorphous silicon (a-Si:H) thin films and solar cells prepared by plasma enhanced chemical vapor deposition (PECVD) has been presented. An SE analysis procedure with step-by-step error minimization has been applied to obtain accurate measures of the structural and optical properties of the component layers of the solar cells. Growth evolution diagrams were developed as functions of the deposition parameters in PECVD for both p-type and n-type layers to characterize the regimes of accumulated thickness over which a-Si:H, hydrogenated nanocrystalline silicon (nc-Si:H) and mixed phase (a

  14. a-Si{sub x}C{sub 1−x}:H thin films with subnanometer surface roughness for biological applications

    SciTech Connect

    Herrera-Celis, José Reyes-Betanzo, Claudia Itzmoyotl-Toxqui, Adrián; Orduña-Díaz, Abdu Pérez-Coyotl, Ana

    2015-09-15

    The characterization of a-Si{sub x}C{sub 1−x}:H thin films by plasma-enhanced chemical vapor deposition with high hydrogen dilution for biological applications is addressed. A root mean square roughness less than 1 nm was measured via atomic force microscopy for an area of 25 μm{sup 2}. Structural analysis was done using Fourier transform infrared spectroscopy in the middle infrared region. It was found that under the deposition conditions, the formation of Si–C bonds is promoted. Electrical dark conductivity measurements were performed to evaluate the effect of high hydrogen dilution and to find the relation between carrier transport properties and the structural arrangement. Conductivities of the order of 10{sup −7} to 10{sup −9} S/cm at room temperature for methane–silane gas flow ratio from 0.35 to 0.85 were achieved, respectively. UV-visible spectra were used to obtain the optical band gap and the Tauc parameter. Optical band gap as wide as 3.55 eV was achieved in the regime of high carbon incorporation. Accordingly, deposition under low power density and high hydrogen dilution reduces the roughness, improves the structure of the network, and stabilizes the film properties as a greater percentage of carbon is incorporated. The biofunctionalization of a-Si{sub x}C{sub 1−x}:H surfaces with NH{sub 2}-terminated self-assembled monolayers was obtained through silanization with 3-aminopropyltrimethoxysilane. This knowledge opens a window for the inclusion of these a-Si{sub x}C{sub 1−x}:H thin films in devices such as biosensors.

  15. Transparent conductive oxide layer with monolayer closed-pack Al-doped ZnO spheres and their application to a-Si thin-film solar cells.

    PubMed

    Lo, Shih-Shou; Lin, Chen-Yu; Jan, Der-Jun

    2011-09-15

    We report a new (to the best of our knowledge) transparent conductive oxide (TCO) layer with a monolayer of closed-pack Al-doped ZnO (AZO) spheres partly embedded in an AZO thin film. The average transmittance and haze ratio in the wavelength range of 380-800 nm achieves 65% and 55%, respectively, when AZO spheres with a diameter of 500 nm are embedded in a thickness of 240 nm AZO thin films. The a-Si thin-film solar cell with a regular p-i-n TCO structure is demonstrated. Under air mass 1.5 global illumination, conversion efficiencies of 5.6%, a fill factor of 0.55, V(oc) of 0.81 V, and a J(sc) of 2.44 mA/cm² are obtained. The Letter helps us to open up potential applications of a new TCO in advanced solar cells and light-emitting diodes.

  16. Thin Film?

    NASA Astrophysics Data System (ADS)

    Kariper, İ. Afşin

    2014-09-01

    This study focuses on the critical surface tension of lead sulfite (PbSO3) crystalline thin film produced with chemical bath deposition on substrates (commercial glass).The PbSO3 thin films were deposited at room temperature at different deposition times. The structural properties of the films were defined and examined according to X-ray diffraction (XRD) and the XRD results such as dislocation density, average grain size, and no. of crystallites per unit area. Atomic force microscopy was used to measure the film thickness and the surface properties. The critical surface tension of the PbSO3 thin films was measured with an optical tensiometer instrument and calculated using the Zisman method. The results indicated that the critical surface tension of films changed in accordance with the average grain size and film thickness. The film thickness increased with deposition time and was inversely correlated with surface tension. The average grain size increased according to deposition time and was inversely correlated with surface tension.

  17. Process issues with Mo/a-Si:H Schottky diode and thin film transistors integration for direct x-ray detection

    NASA Astrophysics Data System (ADS)

    Lee, Czang-Ho; Vygranenko, Yuriy; Nathan, Arokia

    2004-09-01

    This article presents an alternate strategy to reduce mechanical stress issues pertinent to the process integration of molybdenum/hydrogenated amorphous silicon (Mo/a-Si:H) Schottky diodes and thin film transistors (TFTs), used as x-ray sensor pixels for medical imaging. The previous approach was to minimize the intrinsic stress in the Mo layer through appropriate process conditions and film thickness. However, that approach resulted in narrow process latitude and compromised x-ray sensitivity. Alternatively, the mechanical stress in the Mo can be reduced by reducing and/or avoiding the extrinsic stress exerted on the Mo by the underlying films through a different masking sequence in the fabrication. This modified process allows for a more flexible design of the Mo layer for enhanced x-ray sensitivity, while maintaining the mechanical integrity of the various layers. Also, the performance of the Schottky diode is improved in terms of its forward current. The x-ray sensitivity has been measured at different x-ray spectra in the range of 40-100 kVp. The pixel shows good linearity with x-ray dosage and high detection efficiency at low x-ray tube voltages.

  18. Thin Films

    NASA Astrophysics Data System (ADS)

    Khorshidi, Zahra; Bahari, Ali; Gholipur, Reza

    2014-11-01

    Effect of annealing temperature on the characteristics of sol-gel-driven Ta ax La(1- a) x O y thin film spin-coated on Si substrate as a high- k gate dielectric was studied. Ta ax La(1- a) x O y thin films with different amounts of a were prepared (as-prepared samples). X-ray diffraction measurements of the as-prepared samples indicated that Ta0.3 x La0.7 x Oy film had an amorphous structure. Therefore, Ta0.3 x La0.7 x O y film was chosen to continue the present studies. The morphology of Ta0.3 x La0.7 x O y films was studied using scanning electron microscopy and atomic force microscopy techniques. The obtained results showed that the size of grain boundaries on Ta0.3 x La0.7 x O y film surfaces was increased with increasing annealing temperature. Electrical and optical characterizations of the as-prepared and annealed films were investigated as a function of annealing temperature using capacitance-voltage ( C- V) and current density-voltage ( J- V) measurements and the Tauc method. The obtained results demonstrated that Ta0.3 x La0.7 x O y films had high dielectric constant (≈27), wide band gap (≈4.5 eV), and low leakage current density (≈10-6 A/cm2 at 1 V).

  19. Abnormal behavior of threshold voltage shift in bias-stressed a-Si:H thin film transistor under extremely high intensity illumination.

    PubMed

    Han, Sang Youn; Park, Kyung Tea; Kim, Cheolkyu; Jeon, Sanghyun; Yang, Sung-Hoon; Kong, Hyang-Shik

    2015-07-22

    We report on the unusual behavior of threshold voltage turnaround in a hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) when biased under extremely high intensity illumination. The threshold voltage shift changes from negative to positive gate bias direction after ∼30 min of bias stress even when the negative gate bias stress is applied under high intensity illumination (>400 000 Cd/cm(2)), which has not been observed in low intensity (∼6000 Cd/cm(2)). This behavior is more pronounced in a low work function gate metal structure (Al: 4.1-4.3 eV), compared to the high work function of Cu (4.5-5.1 eV). Also this is mainly observed in shorter wavelength of high photon energy illumination. However, this behavior is effectively prohibited by embedding the high energy band gap (∼8.6 eV) of SiOx in the gate insulator layer. These imply that this behavior could be originated from the injection of electrons from gate electrode, transported and trapped in the electron trap sites of the SiNx/a-Si:H interface, which causes the shift of threshold voltage toward positive gate bias direction. The results reported here can be applicable to the large-sized outdoor displays which are usually exposed to the extremely high intensity illumination.

  20. Enhanced electrical characteristics of a-Si thin films by hydrogen passivation with Nd3+:YAG laser treatment in underwater for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Vidhya, Y. Esther Blesso; Vasa, Nilesh J.

    2017-08-01

    Post deposition underwater treatment with a nanosecond Nd3+:YAG laser is proposed and demonstrated for the passivation of electrical defects in 400-1000 nm-thick a-Si thin films needed for solar cells. The proposed pulsed laser beam-overlap technique also allows simultaneous annealing and texturing. Atomic hydrogen, oxygen, and hydroxyl radicals activated by the breakdown of water by laser heating passivate the dangling bonds in the crystal grains, improving the solar cell performance. The presence of hydrogen observed after water annealing using X-ray photo electron spectroscopy (XPS), Raman spectroscopy, and attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR) shows that the passivation improvement is caused by diffusion of atomic hydrogen. After underwater annealing, relative improvement in the life time of minority carriers was measured to be approximately 13% and the efficiency of n-aSi/p-cSi solar cells is found to be increased ( 2 to 3%) when compared to that in air.

  1. Progress in a-SiOx:H thin film solar cells with patterned MgF2 dielectric for top cell of multi-junction system

    NASA Astrophysics Data System (ADS)

    Kang, Dong-Won; Sichanugrist, Porponth; Konagai, Makoto

    2016-07-01

    We successfully designed and experimentally demonstrated an application of patterned MgF2 dielectric material at rear Al-doped ZnO (AZO)/Ag interface in thin film amorphous silicon oxide ( a-SiOx:H) solar cells. When it was realized in practical device process, MgF2 coverage with patterned morphology was employed to allow for current flow between the AZO and Ag against highly resistive MgF2 material. On the basis of the suggested structure, we found an improvement in quantum efficiency of the solar cells with the patterned MgF2. In addition, an enhancement of open circuit voltage ( V oc ) and fill factor ( FF) was observed. A remarkable increase in shunt resistance of the cells with the MgF2 would possibly indicate that the highly resistive MgF2 layer can partly suppress physical shunting across top and bottom electrodes caused by very thin absorber thickness of only 100 nm. The approach showed that our best-performing device revealed an essential improvement in conversion efficiency from 7.83 to 8.01% with achieving markedly high V oc (1.013 V) and FF (0.729). [Figure not available: see fulltext.

  2. Tunable photoluminescence from nc-Si/a-SiNx:H quantum dot thin films prepared by ICP-CVD.

    PubMed

    Sain, Basudeb; Das, Debajyoti

    2013-03-21

    Intense visible photoluminescence (PL) tunable within 1.66-2.47 eV, under UV 325 nm excitation, was obtained from nanocrystalline silicon quantum dots (∼5.72-1.67 nm in diameter) embedded in amorphous silicon-nitride matrix (nc-Si/a-SiN(x):H) prepared in RF-ICPCVD (13.56 MHz) at substrate temperatures between 400 to 150 °C. The dominant component of PL, having a narrow band width of ∼0.16-0.45 eV, originates from quasi-direct band-to-band recombination due to quantum confinement effect (QCE) in the nanocrystalline silicon quantum dots (nc-Si QDs) of appropriate size; however, the contribution of defects arose at lower substrate temperatures leading to asymmetric broadening. Intense atomic hydrogen flux in high-density inductively coupled plasmas (ICPs) provides a very high surface coverage, passivates well the nonradiative dangling bonds, and thereby favors the PL intensity. The average size of nc-Si QDs measured by HR-TEM appears consistent with similar estimates from Raman studies. The red shift of the Raman line and corresponding line broadening originates from the confinement of optical phonons within nc-Si QDs. Photoluminescence emerging from nc-Si/a-SiN(x):H quantum dots obtained from the low temperature and single-step plasma processing holds great promise for the fabrication of light-emitting devices and flexible flat panel displays.

  3. High-Rate Fabrication of a-Si-Based Thin-Film Solar Cells Using Large-Area VHF PECVD Processes

    SciTech Connect

    Deng, Xunming; Fan, Qi Hua

    2011-12-31

    The University of Toledo (UT), working in concert with it’s a-Si-based PV industry partner Xunlight Corporation (Xunlight), has conducted a comprehensive study to develop a large-area (3ft x 3ft) VHF PECVD system for high rate uniform fabrication of silicon absorber layers, and the large-area VHF PECVD processes to achieve high performance a-Si/a-SiGe or a-Si/nc-Si tandem junction solar cells during the period of July 1, 2008 to Dec. 31, 2011, under DOE Award No. DE-FG36-08GO18073. The project had two primary goals: (i) to develop and improve a large area (3 ft × 3 ft) VHF PECVD system for high rate fabrication of > = 8 Å/s a-Si and >= 20 Å/s nc-Si or 4 Å/s a-SiGe absorber layers with high uniformity in film thicknesses and in material structures. (ii) to develop and optimize the large-area VHF PECVD processes to achieve high-performance a-Si/nc-Si or a-Si/a-SiGe tandem-junction solar cells with >= 10% stable efficiency. Our work has met the goals and is summarized in “Accomplishments versus goals and objectives”.

  4. Thin Films

    NASA Astrophysics Data System (ADS)

    Naffouti, Wafa; Nasr, Tarek Ben; Mehdi, Ahmed; Kamoun-Turki, Najoua

    2014-11-01

    Titanium dioxide (TiO2) thin films were synthesized on glass substrates by spray pyrolysis. The effect of solution flow rate on the physical properties of the films was investigated by use of x-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy (AFM), and spectrophotometry techniques. XRD analysis revealed the tetragonal anatase phase of TiO2 with highly preferred (101) orientation. AFM images showed that grain size on top of TiO2 thin films depended on solution flow rate. An indirect band gap energy of 3.46 eV was determined by means of transmission and reflection measurements. The envelope method, based on the optical transmission spectrum, was used to determine film thickness and optical constants, for example real and imaginary parts of the dielectric constant, refractive index, and extinction coefficient. Ultraviolet and visible photoluminescence emission peaks were observed at room temperature. These peaks were attributed to the intrinsic emission and to the surface defect states, respectively.

  5. Results of some initial space qualification testing on triple junction a-Si and CuInSe2 thin film solar cells

    NASA Technical Reports Server (NTRS)

    Mueller, Robert L.; Anspaugh, Bruce E.

    1993-01-01

    A series of environmental tests were completed on one type of triple junction a-Si and two types of CuInSe2 thin film solar cells. The environmental tests include electron irradiation at energies of 0.7, 1.0, and 2.0 MeV, proton irradiation at energies of 0.115, 0.24, 0.3, 0.5, 1.0, and 3.0 MeV, post-irradiation annealing at temperatures between 20 C and 60 C, long term exposure to air mass zero (AM0) photons, measurement of the cells as a function of temperature and illumination intensity, and contact pull strength tests. As expected, the cells are very resistant to electron and proton irradiation. However, when a selected cell type is exposed to low energy protons designed to penetrate to the junction region, there is evidence of more significant damage. A significant amount of recovery was observed after annealing in several of the cells. However, it is not permanent and durable, but merely a temporary restoration, later nullified with additional irradiation. Contact pull strengths measured on the triple junction a-Si cells averaged 667 grams, and pull strengths measured on the Boeing CuInSe2 cells averaged 880 grams. Significant degradation of all cell types was observed after exposure to a 580 hour photon degradation test, regardless of whether the cells had been unirradiated or irradiated (electrons or protons). Although one cell from one manufacturer lost approximately 60 percent of its power after the photon test, several other cells from this manufacturer did not degrade at all.

  6. Direct Fabrication of a-Si:H Thin Film Transistor Arrays on Plastic and Metal Foils for Flexible Displays

    DTIC Science & Technology

    2008-12-01

    electrophoretic ink displays ( EPDs ) fabricated on both low CTE SS and HS-PEN. Both displays have a small number of line defects, but exhibit good...elsewhere include a coat – laser release process and a layer transfer process. In the coat – laser release process a thin polymer layer is cast from...of the polyimide at the glass- polymer interface (Arjavalingam et al. 1993; Doany and Narayan, 1997). Philips has developed a version of this

  7. Colorimetric gas detection by the varying thickness of a thin film of ultrasmall PTSA-coated TiO2 nanoparticles on a Si substrate

    PubMed Central

    Joost, Urmas; Šutka, Andris; Visnapuu, Meeri; Tamm, Aile; Lembinen, Meeri; Antsov, Mikk; Utt, Kathriin; Smits, Krisjanis; Nõmmiste, Ergo

    2017-01-01

    Colorimetric gas sensing is demonstrated by thin films based on ultrasmall TiO2 nanoparticles (NPs) on Si substrates. The NPs are bound into the film by p-toluenesulfonic acid (PTSA) and the film is made to absorb volatile organic compounds (VOCs). Since the color of the sensing element depends on the interference of reflected light from the surface of the film and from the film/silicon substrate interface, colorimetric detection is possible by the varying thickness of the NP-based film. Indeed, VOC absorption causes significant swelling of the film. Thus, the optical path length is increased, interference wavelengths are shifted and the refractive index of the film is decreased. This causes a change of color of the sensor element visible by the naked eye. The color response is rapid and changes reversibly within seconds of exposure. The sensing element is extremely simple and cheap, and can be fabricated by common coating processes. PMID:28243561

  8. Colorimetric gas detection by the varying thickness of a thin film of ultrasmall PTSA-coated TiO2 nanoparticles on a Si substrate.

    PubMed

    Joost, Urmas; Šutka, Andris; Visnapuu, Meeri; Tamm, Aile; Lembinen, Meeri; Antsov, Mikk; Utt, Kathriin; Smits, Krisjanis; Nõmmiste, Ergo; Kisand, Vambola

    2017-01-01

    Colorimetric gas sensing is demonstrated by thin films based on ultrasmall TiO2 nanoparticles (NPs) on Si substrates. The NPs are bound into the film by p-toluenesulfonic acid (PTSA) and the film is made to absorb volatile organic compounds (VOCs). Since the color of the sensing element depends on the interference of reflected light from the surface of the film and from the film/silicon substrate interface, colorimetric detection is possible by the varying thickness of the NP-based film. Indeed, VOC absorption causes significant swelling of the film. Thus, the optical path length is increased, interference wavelengths are shifted and the refractive index of the film is decreased. This causes a change of color of the sensor element visible by the naked eye. The color response is rapid and changes reversibly within seconds of exposure. The sensing element is extremely simple and cheap, and can be fabricated by common coating processes.

  9. Experimental study of heat-treated thin film Ti/Pt heater and temperature sensor properties on a Si microfluidic platform

    NASA Astrophysics Data System (ADS)

    Resnik, D.; Vrtačnik, D.; Možek, M.; Pečar, B.; Amon, S.

    2011-02-01

    Design, fabrication and characterization of thin film Ti/Pt heaters and integrated temperature sensors on a Si microfluidic platform are presented. Ti/Pt heaters and sensors provide controlled heating of microchannels realized on the opposite side of the Si platform. Ti/Pt heaters and sensors were fabricated simultaneously by a dc sputtering method and a lift-off process. Thermal annealing of deposited Ti/Pt layers in the temperature range of 300-700 °C was investigated revealing a strong impact on the Ti/Pt resistivity and, consequently, on the final resistance of fabricated heaters and sensors. Furthermore, it was determined that the temperature coefficient of resistance (TCR) for Ti/Pt temperature sensors and the heater increased with the annealing temperature. Microstructural analysis of deposited and annealed Ti/Pt layers carried out by AES and AFM revealed that recrystallization followed by a grain growth process of heat-treated Ti/Pt layers started at around 500 °C and correlated well with the behavior of electrical properties, but not with the TCR behavior of annealed layers. To reduce the heat losses of the heated Si platform, the heater and temperature sensors were covered hermetically by anodically bonded Pyrex glass with a prefabricated insulating cavity. According to this approach the power consumption was reduced by more than 25% due to the improved thermal insulation. Additional insulation steps implemented during thermal characterization of the assembled microfluidic platform further reduced the power consumption, but also increased the time response of the microfluidic reactor.

  10. Electron cyclotron resonance microwave plasma deposition of a-Si:H and a-SiC:H films

    NASA Technical Reports Server (NTRS)

    Shing, Y. H.; Pool, F. S.

    1991-01-01

    The paper reports electron cyclotron resonance (ECR) deposition of a-Si:H and a-SiC:H thin films using SiH4, CH4, and hydrogen mixed gas plasmas. The ECR deposition conditions were investigated in the pressure region of 0.1 to 100 mtorr, and the film properties were characterized by light and dark conductivity measurements, XRD, Raman spectroscopy, optical transmission, and IR spectroscopy. In addition, the hydrogen dilution effect on ECR-deposited a-SiC:H was investigated.

  11. Spectroscopic Ellipsometry Studies of Thin Film a-Si:H Solar Cell Fabrication by Multichamber Deposition in the n-i-p Substrate Configuration

    NASA Astrophysics Data System (ADS)

    Dahal, Lila Raj

    Real time spectroscopic ellipsometry (RTSE), and ex-situ mapping spectroscopic ellipsometry (SE) are powerful characterization techniques capable of performance optimization and scale-up evaluation of thin film solar cells used in various photovoltaics technologies. These non-invasive optical probes employ multichannel spectral detection for high speed and provide high precision parameters that describe (i) thin film structure, such as layer thicknesses, and (ii) thin film optical properties, such as oscillator variables in analytical expressions for the complex dielectric function. These parameters are critical for evaluating the electronic performance of materials in thin film solar cells and also can be used as inputs for simulating their multilayer optical performance. In this Thesis, the component layers of thin film hydrogenated silicon (Si:H) solar cells in the n-i-p or substrate configuration on rigid and flexible substrate materials have been studied by RTSE and ex-situ mapping SE. Depositions were performed by magnetron sputtering for the metal and transparent conducting oxide contacts and by plasma enhanced chemical vapor deposition (PECVD) for the semiconductor doped contacts and intrinsic absorber layers. The motivations are first to optimize the thin film Si:H solar cell in n-i-p substrate configuration for single-junction small-area dot cells and ultimately to scale-up the optimized process to larger areas with minimum loss in device performance. Deposition phase diagrams for both i- and p -layers on 2" x 2" rigid borosilicate glass substrate were developed as functions of the hydrogen-to-silane flow ratio in PECVD. These phase diagrams were correlated with the performance parameters of the corresponding solar cells, fabricated in the Cr/Ag/ZnO/n/i/ p/ITO structure. In both cases, optimization was achieved when the layers were deposited in the protocrystalline phase. Identical solar cell structures were fabricated on 6" x 6" borosilicate glass with

  12. Thin film interference of colloidal thin films.

    PubMed

    Cong, Hailin; Cao, Weixiao

    2004-09-14

    A stairlike colloidal crystal thin film composed of poly(styrene-methyl methacrylate-acrylic acid) (P(St-MMA-AA)) monodispersed colloids was fabricated on an inclined silicon substrate. Different bright colors were observed on the various parts of the film with different layers as white light irradiated perpendicularly on it. The relationship between the colors and layers of the film was investigated and discussed according to the principle of thin film interference. On the basis of the phenomenon of thin film interference, a one-layer colloidal film having uniform color was researched and it would display diverse colors before and after swollen by styrene (St). A circular stairlike colloidal film was achieved to mimic the colors of the peacock tail feather.

  13. Identification of the Chemical Bonding Prompting Adhesion of a-C:H Thin Films on Ferrous Alloy Intermediated by a SiCx:H Buffer Layer.

    PubMed

    Cemin, F; Bim, L T; Leidens, L M; Morales, M; Baumvol, I J R; Alvarez, F; Figueroa, C A

    2015-07-29

    Amorphous carbon (a-C) and several related materials (DLCs) may have ultralow friction coefficients that can be used for saving-energy applications. However, poor chemical bonding of a-C/DLC films on metallic alloys is expected, due to the stability of carbon-carbon bonds. Silicon-based intermediate layers are employed to enhance the adherence of a-C:H films on ferrous alloys, although the role of such buffer layers is not yet fully understood in chemical terms. The chemical bonding of a-C:H thin films on ferrous alloy intermediated by a nanometric SiCx:H buffer layer was analyzed by X-ray photoelectron spectroscopy (XPS). The chemical profile was inspected by glow discharge optical emission spectroscopy (GDOES), and the chemical structure was evaluated by Raman and Fourier transform infrared spectroscopy techniques. The nature of adhesion is discussed by analyzing the chemical bonding at the interfaces of the a-C:H/SiCx:H/ferrous alloy sandwich structure. The adhesion phenomenon is ascribed to specifically chemical bonding character at the buffer layer. Whereas carbon-carbon (C-C) and carbon-silicon (C-Si) bonds are formed at the outermost interface, the innermost interface is constituted mainly by silicon-iron (Si-Fe) bonds. The oxygen presence degrades the adhesion up to totally delaminate the a-C:H thin films. The SiCx:H deposition temperature determines the type of chemical bonding and the amount of oxygen contained in the buffer layer.

  14. Pyrolyzed thin film carbon

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  15. Opto-electronic properties of P-doped nc-Si–QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration

    SciTech Connect

    Kar, Debjit; Das, Debajyoti

    2016-07-14

    With the advent of nc-Si solar cells having improved stability, the efficient growth of nc-Si i-layer of the top cell of an efficient all-Si solar cell in the superstrate configuration prefers nc-Si n-layer as its substrate. Accordingly, a wide band gap and high conducting nc-Si alloy material is a basic requirement at the n-layer. Present investigation deals with the development of phosphorous doped n-type nanocrystalline silicon quantum dots embedded in hydrogenated amorphous silicon carbide (nc-Si–QD/a-SiC:H) hetero-structure films, wherein the optical band gap can be widened by the presence of Si–C bonds in the amorphous matrix and the embedded high density tiny nc-Si–QDs could provide high electrical conductivity, particularly in P-doped condition. The nc-Si–QDs simultaneously facilitate further widening of the optical band gap by virtue of the associated quantum confinement effect. A complete investigation has been made on the electrical transport phenomena involving charge transfer by tunneling and thermionic emission prevailing in n-type nc-Si–QD/a-SiC:H thin films. Their correlation with different phases of the specific heterostructure has been carried out for detailed understanding of the material, in order to improve its device applicability. The n-type nc-Si–QD/a-SiC:H films exhibit a thermally activated electrical transport above room temperature and multi-phonon hopping (MPH) below room temperature, involving defects in the amorphous phase and the grain-boundary region. The n-type nc-Si–QD/a-SiC:H films grown at ∼300 °C, demonstrating wide optical gap ∼1.86–1.96 eV and corresponding high electrical conductivity ∼4.5 × 10{sup −1}–1.4 × 10{sup −2} S cm{sup −1}, deserve to be an effective foundation layer for the top nc-Si sub-cell of all-Si solar cells in n-i-p structure with superstrate configuration.

  16. Opto-electronic properties of P-doped nc-Si-QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration

    NASA Astrophysics Data System (ADS)

    Kar, Debjit; Das, Debajyoti

    2016-07-01

    With the advent of nc-Si solar cells having improved stability, the efficient growth of nc-Si i-layer of the top cell of an efficient all-Si solar cell in the superstrate configuration prefers nc-Si n-layer as its substrate. Accordingly, a wide band gap and high conducting nc-Si alloy material is a basic requirement at the n-layer. Present investigation deals with the development of phosphorous doped n-type nanocrystalline silicon quantum dots embedded in hydrogenated amorphous silicon carbide (nc-Si-QD/a-SiC:H) hetero-structure films, wherein the optical band gap can be widened by the presence of Si-C bonds in the amorphous matrix and the embedded high density tiny nc-Si-QDs could provide high electrical conductivity, particularly in P-doped condition. The nc-Si-QDs simultaneously facilitate further widening of the optical band gap by virtue of the associated quantum confinement effect. A complete investigation has been made on the electrical transport phenomena involving charge transfer by tunneling and thermionic emission prevailing in n-type nc-Si-QD/a-SiC:H thin films. Their correlation with different phases of the specific heterostructure has been carried out for detailed understanding of the material, in order to improve its device applicability. The n-type nc-Si-QD/a-SiC:H films exhibit a thermally activated electrical transport above room temperature and multi-phonon hopping (MPH) below room temperature, involving defects in the amorphous phase and the grain-boundary region. The n-type nc-Si-QD/a-SiC:H films grown at ˜300 °C, demonstrating wide optical gap ˜1.86-1.96 eV and corresponding high electrical conductivity ˜4.5 × 10-1-1.4 × 10-2 S cm-1, deserve to be an effective foundation layer for the top nc-Si sub-cell of all-Si solar cells in n-i-p structure with superstrate configuration.

  17. Ceramic Composite Thin Films

    NASA Technical Reports Server (NTRS)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  18. Optical thin film devices

    NASA Astrophysics Data System (ADS)

    Mao, Shuzheng

    1991-11-01

    Thin film devices are applied to almost all modern scientific instruments, and these devices, especially optical thin film devices, play an essential role in the performances of the instruments, therefore, they are attracting more and more attention. Now there are numerous kinds of thin film devices and their applications are very diversified. The 300-page book, 'Thin Film Device and Applications,' by Prof. K. L. Chopra gives some general ideas, and my paper also outlines the designs, fabrication, and applications of some optical thin film devices made in my laboratory. Optical thin film devices have been greatly developed in the recent decades. Prof. A. Thelan has given a number of papers on the theory and techniques, Prof. H. A. Macleod's book, 'Thin Film Optical Filters,' has concisely concluded the important concepts of optical thin film devices, and Prof. J. A. Dobrowobski has proposed many successful designs for optical thin film devices. Recently, fully-automatic plants make it easier to produce thin film devices with various spectrum requirements, and some companies, such as Balzers, Leybold AG, Satis Vacuum AG, etc., have manufactured such kinds of coating plants for research or mass-production, and the successful example is the production of multilayer antireflection coatings with high stability and reproducibility. Therefore, it could be said that the design of optical thin film devices and coating plants is quite mature. However, we cannot expect that every problem has been solved, the R&D work still continues, the competition still continues, and new design concepts, new techniques, and new film materials are continually developed. Meanwhile, the high-price of fully-automatic coating plants makes unpopular, and automatic design of coating stacks is only the technique for optimizing the manual design according to the physical concepts and experience, in addition, not only the optical system, but also working environment should be taken into account when

  19. Carbon thin film thermometry

    NASA Technical Reports Server (NTRS)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  20. Mechanics of Thin Films

    DTIC Science & Technology

    1992-02-06

    32 (1991). INTRODUCTION Many technological areas currently use designs that rely on thin films for a variety of effects that include mechanical...film thickness, d is the width of the columnar grains, and Q is the atomic volume. The current film thickness h0 increases in proportion to the film...temperature and on the level of the far field uniform stress (121. h careful examination of these assumptions is currently under way. This work has

  1. Thin film hydrogen sensor

    DOEpatents

    Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  2. Thin film hydrogen sensor

    DOEpatents

    Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

    1999-03-23

    A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

  3. Biomimetic thin film synthesis

    SciTech Connect

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  4. Multifunctional thin film surface

    DOEpatents

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  5. Thin film tritium dosimetry

    DOEpatents

    Moran, Paul R.

    1976-01-01

    The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

  6. Thin film temperature sensor

    NASA Technical Reports Server (NTRS)

    Grant, H. P.; Przybyszewski, J. S.

    1980-01-01

    Thin film surface temperature sensors were developed. The sensors were made of platinum-platinum/10 percent rhodium thermocouples with associated thin film-to-lead wire connections and sputtered on aluminum oxide coated simulated turbine blades for testing. Tests included exposure to vibration, low velocity hydrocarbon hot gas flow to 1250 K, and furnace calibrations. Thermal electromotive force was typically two percent below standard type S thermocouples. Mean time to failure was 42 hours at a hot gas flow temperature of 1250 K and an average of 15 cycles to room temperature. Failures were mainly due to separation of the platinum thin film from the aluminum oxide surface. Several techniques to improve the adhesion of the platinum are discussed.

  7. Overview and Challenges of Thin Film Solar Electric Technologies

    SciTech Connect

    Ullal, H. S.

    2008-12-01

    In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

  8. Thin film photovoltaic device

    DOEpatents

    Catalano, Anthony W.; Bhushan, Manjul

    1982-01-01

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

  9. Thin film ceramic thermocouples

    NASA Technical Reports Server (NTRS)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  10. Thin film photovoltaic device

    DOEpatents

    Catalano, A.W.; Bhushan, M.

    1982-08-03

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

  11. Thin film resonator technology.

    PubMed

    Lakin, Kenneth M

    2005-05-01

    Advances in wireless systems have placed increased demands on high performance frequency control devices for operation into the microwave range. With spectrum crowding, high bandwidth requirements, miniaturization, and low cost requirements as a background, the thin film resonator technology has evolved into the mainstream of applications. This technology has been under development for over 40 years in one form or another, but it required significant advances in integrated circuit processing to reach microwave frequencies and practical manufacturing for high-volume applications. This paper will survey the development of the thin film resonator technology and describe the core elements that give rise to resonators and filters for today's high performance wireless applications.

  12. Biomimetic thin film deposition

    NASA Astrophysics Data System (ADS)

    Rieke, P. C.; Campbell, A. A.; Tarasevich, B. J.; Fryxell, G. E.; Bentjen, S. B.

    1991-04-01

    Surfaces derivatized with organic functional groups were used to promote the deposition of thin films of inorganic minerals. These derivatized surfaces were designed to mimic the nucleation proteins that control mineral deposition during formation of bone, shell, and other hard tissues in living organisms. By the use of derivatized substrates control was obtained over the phase of mineral deposited, the orientation of the crystal lattice and the location of deposition. These features are of considerable importance in many technically important thin films, coatings, and composite materials. Methods of derivatizing surfaces are considered and examples of controlled mineral deposition are presented.

  13. Epitaxial thin films

    DOEpatents

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  14. Thin film solar cell workshop

    NASA Technical Reports Server (NTRS)

    Armstrong, Joe; Jeffrey, Frank

    1993-01-01

    A summation of responses to questions posed to the thin-film solar cell workshop and the ensuing discussion is provided. Participants in the workshop included photovoltaic manufacturers (both thin film and crystalline), cell performance investigators, and consumers.

  15. Thin films for material engineering

    NASA Astrophysics Data System (ADS)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  16. Thin-film optical initiator

    DOEpatents

    Erickson, Kenneth L.

    2001-01-01

    A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

  17. NMR characterization of thin films

    DOEpatents

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  18. VACUUM DEPOSITION OF THIN FILMS,

    DTIC Science & Technology

    The book deals with methods of obtaining and processing thin films , methods of measuring the deposition rate and thickness of thin-film layers, and...the main fields of application of thin films . Vacuum requirements and the requirements for the composition of the residual medium in thermal...evaporation and cathode sputtering are given, and modern methods of producing and measuring vacuums and the equipment used in obtaining thin films are described. (Author)

  19. NMR characterization of thin films

    DOEpatents

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  20. Selective inorganic thin films

    SciTech Connect

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T.

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  1. Thin film photovoltaic cell

    DOEpatents

    Meakin, John D.; Bragagnolo, Julio

    1982-01-01

    A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

  2. Protein thin film machines.

    PubMed

    Federici, Stefania; Oliviero, Giulio; Hamad-Schifferli, Kimberly; Bergese, Paolo

    2010-12-01

    We report the first example of microcantilever beams that are reversibly driven by protein thin film machines fueled by cycling the salt concentration of the surrounding solution. We also show that upon the same salinity stimulus the drive can be completely reversed in its direction by introducing a surface coating ligand. Experimental results are throughout discussed within a general yet simple thermodynamic model.

  3. Thin film scintillators

    NASA Astrophysics Data System (ADS)

    McDonald, Warren; McKinney, George; Tzolov, Marian

    2015-03-01

    Scintillating materials convert energy flux (particles or electromagnetic waves) into light with spectral characteristic matching a subsequent light detector. Commercial scintillators such as yttrium aluminum garnet (YAG) and yttrium aluminum perovskite (YAP) are commonly used. These are inefficient at lower energies due to the conductive coating present on their top surface, which is needed to avoid charging. We hypothesize that nano-structured thin film scintillators will outperform the commercial scintillators at low electron energies. We have developed alternative thin film scintillators, zinc tungstate and zinc oxide, which show promise for higher sensitivity to lower energy electrons since they are inherently conductive. Zinc tungstate films exhibit photoluminescence quantum efficiency of 74%. Cathodoluminescence spectroscopy was applied in transmission and reflection geometries. The comparison between the thin films and the YAG and YAP commercial scintillators shows much higher light output from the zinc tungstate and zinc oxide at electron energies less than 5 keV. Our films were integrated in a backscattered electron detector. This detector delivers better images than an identical detector with commercial YAG scintillator at low electron energies. Dr. Nicholas Barbi from PulseTor LLC, Dr. Anura Goonewardene, NSF Grants: #0806660, #1058829, #0923047.

  4. Physics of thin films

    SciTech Connect

    Francombe, M.H. ); Vossen, J.L. )

    1992-01-01

    This book of Physics of Thin Films emphasizes two main technical themes. The first is essentially an extension of the topical thrust on Thin Films for Advance Electronic Devices, developed in Volume 15 of this series. The second deals primarily with the physical and mechanical behavior of films and the influence of these in relation to various applications. The first of the four articles in this volume, by Neelkanth G. Dhere, discusses high-transition-temperature (T{sub c}) superconducting films. Since their discovery in 1986, both world-wide research activity and published literature on high-T{sub c} oxide films have exploded at a phenomenal rate. In his treatment, the author presents an effective survey of the already vast literature on this subject, discusses the numerous techniques under development for the growth of these perovskite-related complex oxides, and describes their key properties and applications. In particular, factors affecting the epitaxial structure, critical current capability, and microwave conductivity in Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O based film compositions are evaluated in relation to their use at 77K. An overview of potential applications in a variety of microwave devices, wide-band optical detectors, SQUID-type high-sensitivity magnetometers, etc., is included.

  5. [Spectral emissivity of thin films].

    PubMed

    Zhong, D

    2001-02-01

    In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

  6. Thin film superconductor magnetic bearings

    DOEpatents

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  7. Chiral atomically thin films.

    PubMed

    Kim, Cheol-Joo; Sánchez-Castillo, A; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm(-1)) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  8. Chiral atomically thin films

    NASA Astrophysics Data System (ADS)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm-1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  9. Advanced thin film thermocouples

    NASA Technical Reports Server (NTRS)

    Kreider, K. G.; Semancik, S.; Olson, C.

    1984-01-01

    The fabrication, materials characterization, and performance of thin film platinum rhodium thermocouples on gas turbine alloys was investigated. The materials chosen for the study were the turbine blade alloy systems MAR M200+Hf with NiCoCrAlY and FeCrAlY coatings, and vane alloy systems MAR M509 with FeCrAlY. Research was focussed on making improvements in the problem areas of coating substrate stability, adhesion, and insulation reliability and durability. Diffusion profiles between the substrate and coating with and without barrier coatings of Al2O3 are reported. The relationships between fabrication parameters of thermal oxidation and sputtering of the insulator and its characterization and performance are described. The best thin film thermocouples were fabricated with the NiCoCrAlY coatings which were thermally oxidized and sputter coated with Al2O3.

  10. Microstructure of Thin Films

    DTIC Science & Technology

    1990-02-07

    study of Ion Assisted deposition (IAD) with different materials: metals , Al, Ag, and dielectrics, nitrides, fluorides and oxides. Some additional...optical thin films. The materials studied by ion -assisted deposition has ranged over metals , especially silver and aluminum, and dielectrics, especially... Ion -assisted deposition of metals It was of interest to us to determine if the great benefits of io-assisted deposition in the fabrication of

  11. Thin film composite electrolyte

    DOEpatents

    Schucker, Robert C.

    2007-08-14

    The invention is a thin film composite solid (and a means for making such) suitable for use as an electrolyte, having a first layer of a dense, non-porous conductive material; a second layer of a porous ionic conductive material; and a third layer of a dense non-porous conductive material, wherein the second layer has a Coefficient of thermal expansion within 5% of the coefficient of thermal expansion of the first and third layers.

  12. Dewetting of Thin Polymer Films

    NASA Astrophysics Data System (ADS)

    Dixit, P. S.; Sorensen, J. L.; Kent, M.; Jeon, H. S.

    2001-03-01

    DEWETTING OF THIN POLYMER FILMS P. S. Dixit,(1) J. L. Sorensen,(2) M. Kent,(2) H. S. Jeon*(1) (1) Department of Petroleum and Chemical Engineering, New Mexico Institute of Mining and Technology, 801 Leroy Place, Socorro, NM 87801, jeon@nmt.edu (2) Department 1832, Sandia National Laboratories, Albuquerque, NM. Dewetting of thin polymer films is of technological importance for a variety of applications such as protective coatings, dielectric layers, and adhesives. Stable and smooth films are required for the above applications. Above the glass transition temperature (Tg) the instability of polymer thin films on a nonwettable substrate can be occurred. The dewetting mechanism and structure of polypropylene (Tg = -20 ^circC) and polystyrene (Tg = 100 ^circC) thin films is investigated as a function of film thickness (25 Åh < 250 Åand quenching temperature. Contact angle measurements are used in conjunction with optical microscope to check the surface homogeneity of the films. Uniform thin films are prepared by spin casting the polymer solutions onto silicon substrates with different contact angles. We found that the stable and unstable regions of the thin films as a function of the film thickness and quenching temperature, and then constructed a stability diagram for the dewetting of thin polymer films. We also found that the dewetting patterns of the thin films are affected substantially by the changes of film thickness and quenching temperature.

  13. Thin Film Optical Coatings

    NASA Astrophysics Data System (ADS)

    Ristau, Detlev; Ehlers, Henrik

    Within the scientific conception of the modern world, thin film optical coatings can be interpreted as one-dimensional photonic crystals. In general, they are composed of a sequence of single layers which consist of different transparent dielectrics with a thickness in the nanometer scale according to the operation wavelength range. The major function of these photonic structures is to adapt the properties of an optical surface to the needs of specific applications. By application of optical thin film coatings with optimized designs, the spectral characteristics of a surface can be modified to practically any required transfer function for a certain wavelength range. For example, the Fresnel reflection of a lens or a laser window can be suppressed for a broad wavelength range by depositing an antireflective coating containing only a few single layers. On the basis of a layer stack with alternating high- and low-refracting materials, high reflectance values up to 99.999% can be achieved for a certain laser wavelength. In addition to these basic functions, optical coatings can realize a broad variety of spectral filter characteristics according to even extremely sophisticated demands in modern precision optics and laser technology. Moreover, recent developments in optical thin film technology provide the means to combine selected optical properties with other features concerning, for instance, the thermal, mechanical or chemical stability of a surface. The latest progress in ophthalmic coatings even includes the integration of self-cleaning, photoactive or anti-fogging functions in antireflective coatings on glass.

  14. Testing Asymmetry in Plasma-Ball Growth Seeded by a Nanoscale Absorbing Defect Embedded in a SiO2 Thin-Film Matrix Subjected to UV Pulsed-Laser Radiation

    SciTech Connect

    Papernov, S.; Schmid, A.W.

    2008-09-16

    Previous studies of ultraviolet, nanosecond-pulsed-laser damage in thin films revealed nanoscale absorbing defects as a major source of damage initiation. It was also demonstrated that damage (crater formation) is facilitated by plasma-ball formation around absorbing defects. In this work an attempt is made to verify the symmetry of the plasma ball by irradiating SiO2 thin film with embedded gold nanoparticles from the side of either the air/film or substrate/film interfaces. Crater-formation thresholds derived in each case support preferential plasma-ball growth in the direction of the laser-beam source. The strong impact of internal E-field distribution is identified.

  15. Recent progress in Si thin film technology for solar cells

    NASA Astrophysics Data System (ADS)

    Kuwano, Yukinori; Nakano, Shoichi; Tsuda, Shinya

    1991-11-01

    Progress in Si thin film technology 'specifically amorphous Si (a-Si) and polycrystalline Si (poly-Si) thin film' for solar cells is summarized here from fabrication method, material, and structural viewpoints. In addition to a-Si, primary results on poly-Si thin film research are discussed. Various applications for a-Si solar cells are mentioned, and consumer applications and a-Si solar cell photovoltaic systems are introduced. New product developments include see-through solar cells, solar cell roofing tiles, and ultra-light flexible solar cells. As for new systems, air conditioning equipment powered by solar cells is described. Looking to the future, the proposed GENESIS project is discussed.

  16. Holographic thin film analyzer

    NASA Technical Reports Server (NTRS)

    Williams, J. R.; Norden, B. N. (Inventor)

    1973-01-01

    A system for the analysis and measurement of thin films in which the light output of a laser is split into two beams is discribed. The first beam is focused to illuminate the entire area of a photographic plate and the second beam is colummated and directed through a relatively small portion of the photographic plate onto the sample with the film to be observed. The surface of the sample is positioned at a slight angle with respect to a plane normal to the second beam and the light reflected from the sample arrives back at the photographic plate in a region other than through which the second beam originally passes. By making two successive exposures during the deposition of material on the surface of the sample, holograms are recorded on the photographic plate. The plate is then developed and interference lines of the hologram provide a measurement of the film or material deposited between exposure.

  17. Thin θ -film optics

    NASA Astrophysics Data System (ADS)

    Huerta, Luis

    2016-12-01

    A Chern-Simons theory in 3D is accomplished by the so-called θ term in the action (θ /2 )∫F ∧F , which contributes only to observable effects on the boundaries of such a system. When electromagnetic radiation interacts with the system, the wave is reflected and its polarization is rotated at the interface, even when both the θ system and the environment are pure vacuum. These topics have been studied extensively. Here, we investigate the optical properties of a thin θ film, where multiple internal reflections could interfere coherently. The cases of pure vacuum and a material with magnetoelectric properties are analyzed. It is found that the film reflectance is enhanced compared to ordinary non-θ systems and the interplay between magnetoelectric properties and the θ parameter yield film opacity and polarization properties which could be interesting in the case of topological insulators, among other topological systems.

  18. Thin film mechanics

    NASA Astrophysics Data System (ADS)

    Cooper, Ryan C.

    This doctoral thesis details the methods of determining mechanical properties of two classes of novel thin films suspended two-dimensional crystals and electron beam irradiated microfilms of polydimethylsiloxane (PDMS). Thin films are used in a variety of surface coatings to alter the opto-electronic properties or increase the wear or corrosion resistance and are ideal for micro- and nanoelectromechanical system fabrication. One of the challenges in fabricating thin films is the introduction of strains which can arise due to application techniques, geometrical conformation, or other spurious conditions. Chapters 2-4 focus on two dimensional materials. This is the intrinsic limit of thin films-being constrained to one atomic or molecular unit of thickness. These materials have mechanical, electrical, and optical properties ideal for micro- and nanoelectromechanical systems with truly novel device functionality. As such, the breadth of applications that can benefit from a treatise on two dimensional film mechanics is reason enough for exploration. This study explores the anomylously high strength of two dimensional materials. Furthermore, this work also aims to bridge four main gaps in the understanding of material science: bridging the gap between ab initio calculations and finite element analysis, bridging the gap between ab initio calculations and experimental results, nanoscale to microscale, and microscale to mesoscale. A nonlinear elasticity model is used to determine the necessary elastic constants to define the strain-energy density function for finite strain. Then, ab initio calculations-density functional theory-is used to calculate the nonlinear elastic response. Chapter 2 focuses on validating this methodology with atomic force microscope nanoindentation on molybdenum disulfide. Chapter 3 explores the convergence criteria of three density functional theory solvers to further verify the numerical calculations. Chapter 4 then uses this model to investigate

  19. Study of hydrogen states in a-Si:H films, dehydrogenization treatments and influence of hydrogen on nanosecond pulse laser crystallization of a-Si:H

    NASA Astrophysics Data System (ADS)

    Volodin, V. A.; Galkov, M. S.; Safronova, N. A.; Kamaev, G. N.; Antonenko, A. H.; Kochubey, S. A.

    2014-12-01

    Structures based on hydrogenated amorphous silicon (a-Si:H) films deposited on various substrates (including not refractory ones) are widely applied in giant microelectronics devices, such as flat panel displays based on active matrix thin-film transistors and solar cells. The a-Si:H films produced by plasma enhanced chemical vapor deposition (PECVD) methods, contain up to 40% atoms of hydrogen. The influence of hydrogen on the optical and electrical properties of the films and their degradation is important. Therefore, the development of express and non-destructive methods for control of the hydrogen concentration in thin films continues to be an actual task to date. Previously, from a comparative analysis of infrared (IR) spectroscopy and Raman scattering spectroscopy, the ratios of the integral intensities of Raman peaks due to scattering by vibrations of the Si-H and Si-H2 bonds to the intensity of Raman peak of the Si-Si bonds were experimentally determined. Knowing these ratios, it is possible to measure the hydrogen concentration, moreover, separately in Si-H and Si-H2 states. Proposed quantitative method for determining of the hydrogen concentration from analysis of the Raman spectra is an express, non-destructive method and can be used for "in situ" monitoring of the hydrogen. The aim of this work was to determine the polarization dependence of Raman scattering by stretching vibrations of Si-H bonds and find the form of the corresponding Raman tensors. From analysis of Raman intensities in different polarizations the Raman tensors for Si-H and Si-H2 bonds were determined. The regimes for dehydrogenization of thick (up to 1 micron) a-Si:H films were found. The nanosecond pulse XeCl laser with wavelength of 308 nm and pulse duration of 10 ns was used for pulse crystallization of as-deposited and dehydrogenated films. As it was studied earlier, for a-Si:H films with high hydrogen concentration, the threshold for crystallization is very close to threshold of

  20. Polycrystalline thin film photovoltaic technology

    SciTech Connect

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L.; Noufi, R.

    1991-03-01

    Low-cost, high-efficiency thin-film modules are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. In this paper we review the significant technical progress made in the following thin films: copper indium diselenide, cadmium telluride, and polycrystalline thin silicon films. Also, the recent US DOE/SERI initiative to commercialize these emerging technologies is discussed. 6 refs., 9 figs.

  1. Intermixing and thermal oxidation of ZrO2 thin films grown on a-Si, SiN, and SiO2 by metallic and oxidic mode magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Coloma Ribera, R.; van de Kruijs, R. W. E.; Sturm, J. M.; Yakshin, A. E.; Bijkerk, F.

    2017-03-01

    The initial growth of DC sputtered ZrO2 on top of a-Si, SiN, and SiO2 layers has been studied by in vacuo high-sensitivity low energy ion scattering for two gas deposition conditions with different oxygen contents (high-O and low-O conditions). This unique surface sensitive technique allowed the determination of surface composition and thicknesses required to close the ZrO2 layer on all three substrates for both conditions. The ZrO2 layer closes similarly on all substrates due to more favorable enthalpies of formation for ZrO2 and ZrSiO4, resulting in passivation of the Si from the substrate. However, this layer closes at about half of the thickness (˜1.7 nm) for low-O conditions due to less oxidative conditions and less energetic particles arriving at the sample, which leads to less intermixing via silicate formation. In contrast, for high-O conditions, there is more ZrSiO4 and/or SiOx formation, giving more intermixing (˜3.4 nm). In vacuo X-ray photoelectron spectroscopy (XPS) measurements revealed similar stoichiometric ZrO2 layers deposited by both conditions and a higher interaction of the ZrO2 layer with the underlying a-Si for high-O conditions. In addition, oxygen diffusion through low-O ZrO2 films on a-Si has been investigated by ex situ angular-resolved XPS of samples annealed in atmospheric oxygen. For temperatures below 400 °C, no additional oxidation of the underlying a-Si was observed. This, together with the amorphous nature and smoothness of these samples, makes ZrO2 a good candidate as an oxidation protective layer on top of a-Si.

  2. Thin film hydrogen sensor

    DOEpatents

    Lauf, Robert J.; Hoffheins, Barbara S.; Fleming, Pamela H.

    1994-01-01

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

  3. Nonlinear optical thin films

    NASA Technical Reports Server (NTRS)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  4. Nonlinear optical thin films

    NASA Technical Reports Server (NTRS)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  5. Polycrystalline Thin-Film Photovoltaic Technologies: Progress and Technical Issues

    SciTech Connect

    Ullal, H. S.

    2004-08-01

    Polycrystalline thin-film materials based on copper indium diselenide (CuInSe2, CIS) and cadmium telluride (CdTe) are promising thin-film solar cells for various power and specialty applications. Impressive results have been obtained in the past few years for both thin-film copper indium gallium diselenide (CIGS) solar cells and thin-film CdTe solar cells. NCPV/NREL scientists have achieved world-record, total-area efficiencies of 19.3% for a thin-film CIGS solar cell and 16.5% for thin-film CdTe solar cell. A number of technical R&D issues related to CIS and CdTe have been identified. Thin-film power module efficiencies up to 13.4% has been achieved thus far. Tremendous progress has been made in the technology development for module fabrication, and multi-megawatt manufacturing facilities are coming on line with expansion plans in the next few years. Several 40-480 kW polycrystalline thin-film, grid-connected PV arrays have been deployed worldwide. Hot and humid testing is also under way to validate the long-term reliability of these emerging thin-film power products. The U.S. thin-film production (amorphous silicon[a-Si], CIS, CdTe) is expected to exceed 50 MW by the end of 2005.

  6. Host thin films incorporating nanoparticles

    NASA Astrophysics Data System (ADS)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  7. First Thin Film Festival

    NASA Astrophysics Data System (ADS)

    Samson, Philippe

    2005-05-01

    The constant evolution of the satellite market is asking for better technical performances and reliability for a reduced cost. Solar array is in front line of this challenge. This can be achieved by present technologies progressive improvement in cost reduction or by technological breakthrough. To reach an effective End Of Live performance100 W/kg of solar array is not so easy, even if you suppose that the mass of everything is nothing! Thin film cells are potential candidate to contribute to this challenge with certain confidence level and consequent development plan validation and qualification on ground and flight. Based on a strong flight heritage in flexible Solar Array design, the work has allowed in these last years, to pave the way on road map of thin film technologies . This is encouraged by ESA on many technological contracts put in concurrent engineering. CISG was selected cell and their strategy of design, contributions and results will be presented. Trade-off results and Design to Cost solutions will discussed. Main technical drivers, system design constraints, market access, key technologies needed will be detailed in this paper and the resulting road-map and development plan will be presented.

  8. Improvement in optical and structural properties of ZnO thin film through hexagonal nanopillar formation to improve the efficiency of a Si-ZnO heterojunction solar cell

    NASA Astrophysics Data System (ADS)

    Maity, S.; Bhunia, C. T.; Sahu, P. P.

    2016-05-01

    We propose to use ZnO thin film with hexagonal nanopillars deposited on Si substrate to enhance the efficiency of a solar cell. It has been treated chemically and thermally and various crystal orientations have been obtained. X-ray diffraction of ZnO thin film shows relatively high intensity peak at 34.3° angle (0 0 2) compared to other orientations. Photoluminescence measurements also confirm a narrow full width at half maximum peak at 3.3 eV, which is more than that obtained for as-grown (broad emission peak around 3.0 eV). The alignment of nanorod structure made by adding a dopant of 0.15 mole fraction of magnesium increases both photon collection and electron collection efficiency. As a result, the solar cell efficiency is enhanced from 10% to 20%.

  9. Thin film atomic hydrogen detectors

    NASA Technical Reports Server (NTRS)

    Gruber, C. L.

    1977-01-01

    Thin film and bead thermistor atomic surface recombination hydrogen detectors were investigated both experimentally and theoretically. Devices were constructed on a thin Mylar film substrate. Using suitable Wheatstone bridge techniques sensitivities of 80 microvolts/2x10 to the 13th power atoms/sec are attainable with response time constants on the order of 5 seconds.

  10. Thin Film Inorganic Electrochemical Systems.

    DTIC Science & Technology

    1995-07-01

    determined that thin film cathodes of LiCoO2 can be readily performed by either spray pyrolysis or spin coating . These cathodes are electrochemically...active. We have also determined that thin film anodes of Li4Ti5O12 can be prepared by spray pyrolysis or spin coating . These anodes are also

  11. Magnetochromatic thin-film microplates.

    PubMed

    He, Le; Janner, Michael; Lu, Qipeng; Wang, Mingsheng; Ma, Hua; Yin, Yadong

    2015-01-07

    A new type of magnetochromatic material is developed based on thin-film interference of microplates self-assembled from super-paramagnetic nanocrystals. Dynamic optical tuning can be achieved through orientational manipulation of free-standing super-paramagnetic thin-film microplates using external magnetic fields.

  12. Methods of Producing Thin Films,

    DTIC Science & Technology

    The report describes various methods of producing thin films , especially for microelectronics. In addition to the classical methods of forming thin ... films by vacuum vapor deposition, it also describes processes of diode sputtering and modern methods of cathode sputtering by means of a third

  13. Thin film ion conducting coating

    DOEpatents

    Goldner, Ronald B.; Haas, Terry; Wong, Kwok-Keung; Seward, George

    1989-01-01

    Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

  14. Material properties and device evaluations of ECR-deposited a-Si:H and a-SiC:H films

    NASA Technical Reports Server (NTRS)

    Shing, Y. H.; Pool, F. S.; Essick, J. M.

    1991-01-01

    Device-quality a-Si:H and a-SiC:H films have been deposited using electron cyclotron resonance (ECR) microwave plasmas of SiH4, CH4, and H2 mixtures. Typical material properties of ECR-deposited, photosensitive a-Si:H films are: (1) high photosensitivity up to 2 x 106 with a photoconductivity of 10 exp -5 to 10 exp -4/(Ohm-cm), (2) a Tauc gap of 1.75 to 1.85 eV, (3) an Urbach slope of 50-60 meV determined by the constant photocurrent method, and (4) an integrated defect density of 1-2 x 10 exp 16/cu cm determined by junction capacitance measurements. Highly conductive, p-type a-SiC:H films have been produced by ECR plasmas with a conductivity of 0.2/(Ohm-cm).

  15. Material properties and device evaluations of ECR-deposited a-Si:H and a-SiC:H films

    NASA Technical Reports Server (NTRS)

    Shing, Y. H.; Pool, F. S.; Essick, J. M.

    1991-01-01

    Device-quality a-Si:H and a-SiC:H films have been deposited using electron cyclotron resonance (ECR) microwave plasmas of SiH4, CH4, and H2 mixtures. Typical material properties of ECR-deposited, photosensitive a-Si:H films are: (1) high photosensitivity up to 2 x 106 with a photoconductivity of 10 exp -5 to 10 exp -4/(Ohm-cm), (2) a Tauc gap of 1.75 to 1.85 eV, (3) an Urbach slope of 50-60 meV determined by the constant photocurrent method, and (4) an integrated defect density of 1-2 x 10 exp 16/cu cm determined by junction capacitance measurements. Highly conductive, p-type a-SiC:H films have been produced by ECR plasmas with a conductivity of 0.2/(Ohm-cm).

  16. Spinodal dewetting of thin films

    NASA Astrophysics Data System (ADS)

    Jaiswal, Prabhat K.; Puri, S.

    2009-01-01

    Stable thin liquid films are of various scientific and technological applications, e.g., in optical coating, painting technologies, coating thin wires and fibers, lubricants, adhesives, etc. However, the instabilities in a thin film may lead to rupture, hole formation, and other morphological changes which amplify the nonuniformity in the thin film [1]. This morphological evolution in an unstable thin film is generally known as `dewetting' [2]. There have recently been a number of theoretical and experimental studies on dewetting in thin films [3-6]. The process of `spinodal dewetting' comes into the category of a general class of phenomena, spinodal decomposition [7]. The pattern formation taking place during dewetting can also be of great importance in nanotechnology, e.g., for preparing quantum dots [8], nanorings [9], etc. We numerically solve the nonlinear two-dimensional thin film equation [2] for a thin liquid film subjected to the long range van der Waals attraction and short range Born repulsion. The simulation results for the temporal evolution of domains and height profile along diagonal direction of the lattice show the `hills and valleys' short of structures which is the typical morphology obtained during the spinodal dewetting [10]. We obtain the dynamical correlation function and structure factor showing the existence of a characteristic length scale in the system at late time. We give the scaling arguments for the length scale of the drops to be proportional to t1/3 which is in agreement with our numerical results for the domain growth.

  17. Ferromagnetic thin films

    DOEpatents

    Krishnan, K.M.

    1994-12-20

    A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

  18. Polyimide Aerogel Thin Films

    NASA Technical Reports Server (NTRS)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  19. Thin film hydrogen sensor

    DOEpatents

    Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

    1994-11-22

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

  20. Ferromagnetic thin films

    DOEpatents

    Krishnan, Kannan M.

    1994-01-01

    A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.

  1. Composite Thin Films

    SciTech Connect

    Martin, Peter M.

    2003-02-01

    Composites are one of more versatile types of materials, and can be characterized as multicomponent, or multiphase, mixtures. They can have unique structural, optical, electrical and magnetic properties not possible with a simple single component material. One of the best known composite materials is fiberglass, which is composed of glass fibers in a polymer matrix. This family of materials and thin films is highly disordered and inhomogeneous on a microstructural scale. Nanocrystalline and nanoclusters are now actively being investigated. The inhomogeneities can be fibers, clusters of atoms or molecules, grains with different crystalline phases (nanocrystalline clusters), inclusions with different electrical and magnetic properties. Note that the particles can have the same composition as the host material, but will have a different structural geometry. Carbon-carbon composites are a good example, where carbon fibers or threads are incorporated into carbonaceous resin

  2. Stresses in Tungsten Thin Films for Single Photon Detectors

    NASA Astrophysics Data System (ADS)

    Kaatz, Laurna; Lita, Adriana; Balzar, Davor

    2004-10-01

    Tungsten thin films are used both as photon absorbers and thermometers and are considered for the fabrication of Single Photon Detectors with possible application in quantum computing. These applications require operation close to the superconducting transition temperature, Tc, which is ˜15 mK for alpha-W and up to 4 K for beta-W. The addition of an antireflective silicon oxide coating over the thin film increases the efficiency of the detectors, but suppresses the thin film's Tc. The objective of this study was to examine whether the difference in stress values may affect the Tc and phase composition in the thin films. Stresses in tungsten thin films originate from growing process, and from the difference in thermal expansion coefficients of the substrate, thin film, and coating. Stresses were studied by x-ray diffraction (XRD) through the changes in interplanar spacings. The measurements were carried out both on a W thin film sputtered onto a Si substrate, and another sample with an additional silicon oxide capping, at both room and low ( ˜8 K) temperatures. Based on these measurements and calculations, a correlation was established between the Tc and stresses in thin films, which can explain the suppression of the Tc in capped thin films.

  3. Center for Thin Film Studies

    DTIC Science & Technology

    1991-01-22

    Properties of Hafnium Dioxide Thin Films Appendix C Cross Sections for 170.50 Backscattering of 4He from Oxygen for ’He Energies Between 1.8 and 5.0 MeV...microstructural properties of hafnium dioxide thin films J. P. Lehan, Y. Mao, B. G. Bovard, and H. A. Macleod Summary We have applied a variety of analytical...tools to educe the compositional and morphological changes experienced by thin films of hafnium dioxide deposited under a variety of conditions. Surface

  4. Photoluminescence in erbium doped amorphous silicon oxycarbide thin films

    NASA Astrophysics Data System (ADS)

    Gallis, Spyros; Huang, Mengbing; Efstathiadis, Harry; Eisenbraun, Eric; Kaloyeros, Alain E.; Nyein, Ei Ei; Hommerich, Uwe

    2005-08-01

    Photoluminescence (PL) in Er-doped amorphous silicon oxycarbide (a-SiCxOy:Er) thin films, synthesized via thermal chemical vapor deposition, was investigated for carbon and oxygen concentrations in the range of 0-1.63. Intense room-temperature PL was observed at 1540 nm, with the PL intensity being dependent on the carbon and oxygen content. The strongest PL intensity was detected for a-SiC0.53O0.99:Er when pumped at 496.5 nm, with ˜20 times intensity enhancement as compared to a-SiO2:Er. Broadband excitation in the visible was observed for a-SiC0.53O0.99:Er. Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy analyses suggest that the formation of Si-C-O networks plays an important role in enhancing the Er optical activity in a-SiCxOy:Er films.

  5. Ultra thin gage plastic film

    NASA Technical Reports Server (NTRS)

    Cox, D. W., Jr.; Struble, A. D.

    1971-01-01

    Process utilizing specially modified conventional equipment, with changes in process temperature, pressure, and cooling requirements produces ultra thin 1.56 micron /0.0614 mil/ thick polyethylene film.

  6. Interference Colors in Thin Films.

    ERIC Educational Resources Information Center

    Armstrong, H. L.

    1979-01-01

    Explains interference colors in thin films as being due to the removal, or considerable reduction, of a certain color by destructive inteference that results in the complementary color being seen. (GA)

  7. Interference Colors in Thin Films.

    ERIC Educational Resources Information Center

    Armstrong, H. L.

    1979-01-01

    Explains interference colors in thin films as being due to the removal, or considerable reduction, of a certain color by destructive inteference that results in the complementary color being seen. (GA)

  8. The thin film microwave iris

    NASA Technical Reports Server (NTRS)

    Ramey, R. L.; Landes, H. S.; Manus, E. A.

    1972-01-01

    Development of waveguide iris for microwave coupling applications using thin film techniques is discussed. Production process and installation of iris are described. Iris improves power transmission properties of waveguide window.

  9. Thin film strain transducer

    NASA Astrophysics Data System (ADS)

    Rand, J. L.

    1981-01-01

    Previous attempts to develop an appropriate sensor for measuring the stress or strain of high altitude balloons during flight are reviewed as well as the various conditions that must be met by such a device. The design, development and calibration of a transducer which promises to satisfy the necessary design constraints are described. The thin film strain transducer has a low effective modulus so as not to interfere with the strain that would naturally occur in the balloon. In addition, the transducer has a high sensitivity to longitudinal strain (7.216 mV/V/unit strain) which is constant for all temperature from room temperature to -80 C and all strains from 5 percent compression to 10 percent tensile strain. At the same time, the sensor is relatively insensitive (0.27 percent) to transverse forces. The device has a standard 350 ohm impedance which is compatible with available bridge balance, amplification and telemetry instrumentation now available for balloon flight. Recommendations are included for improved coatings to provide passive thermal control as well as model, tethered and full scale flight testing.

  10. Thin film cell development workshop report

    NASA Technical Reports Server (NTRS)

    Woodyard, James R.

    1991-01-01

    The Thin Film Development Workshop provided an opportunity for those interested in space applications of thin film cells to debate several topics. The unique characteristics of thin film cells as well as a number of other issues were covered during the discussions. The potential of thin film cells, key research and development issues, manufacturing issues, radiation damage, substrates, and space qualification of thin film cells were discussed.

  11. Multilayer Thin-Film Microcapacitors

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita; Thakoor, Anil; Karmon, Dan

    1995-01-01

    Miniature capacitors containing multiple alternating thin-film dielectric and metal layers proposed, especially for use in integrated and hybrid electronic circuits. Because capacitance inversely proportional to thickness of dielectric layers, use of thin, high-quality dielectric layers affords capacitance and energy-storage densities much greater than now available. These devices much smaller and more reliable than state-of-art capacitors.

  12. Thin-Film Power Transformers

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  13. Thin-Film Power Transformers

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  14. Surface plasmons on thin films

    NASA Astrophysics Data System (ADS)

    Fallesen, Todd; Jahncke, Cl; Hallen, Hd

    2004-03-01

    Surface plasmons on silver, gold and aluminum thin films are measured using a total internal reflection geometry. These measurements are made with a simple apparatus using a differential gear box which will be described. The surface plasmon resonances are compared with theoretical calculations for different film thicknesses and materials.

  15. The effect of film tensile stress on crystallite nucleation and growth in thermally annealed a-Si:H

    NASA Astrophysics Data System (ADS)

    Mahan, A. H.; Dabney, M. S.; Molina Piper, D.; Nemeth, W.

    2014-02-01

    The influence of stress in thin films appears to be a widespread issue when such films are thermally annealed to facilitate crystallite nucleation and growth. It is therefore of interest to examine on a fundamental level how stress influences crystallite nucleation and growth in a thermally annealed thin film system that has been extensively studied and well characterized. This article reports crystallite nucleation rates, growth rates and activation energies for nucleation and growth in different spatial regions of a thermally annealed a-Si:H film. The rates far from a cleaved film edge are representative of a film region that is under high tensile stress, while rates near a cleaved film edge are representative of a film region that has undergone stress relief. The existence of or reduction in film stress is supported by μ-Raman measurements. It is shown that film stress increases the film nucleation rate and decreases the crystallite growth rate, resulting in significantly smaller crystallite sizes in the fully crystallized stressed film areas compared to those observed in the stress relieved areas. By combining the activation energy data for nucleation and growth, it is shown how film stress affects two fundamental structural parameters that control crystallization, the height of the amorphous-crystalline energy barrier and the critical crystallite size.

  16. Vapor deposition of thin films

    DOEpatents

    Smith, David C.; Pattillo, Stevan G.; Laia, Jr., Joseph R.; Sattelberger, Alfred P.

    1992-01-01

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  17. Atmospheric Pressure Plasma CVD of Amorphous Hydrogenated Silicon Carbonitride (a-SiCN:H) Films Using Triethylsilane and Nitrogen

    SciTech Connect

    Srinivasan Guruvenket; Steven Andrie; Mark Simon; Kyle W. Johnson; Robert A. Sailer

    2011-10-04

    Amorphous hydrogenated silicon carbonitride (a-SiCN:H) thin films are synthesized by atmospheric pressure plasma enhanced chemical vapor (AP-PECVD) deposition using the Surfx Atomflow{trademark} 250D APPJ source with triethylsilane (HSiEt{sub 3}, TES) and nitrogen as the precursor and the reactive gases, respectively. The effect of the substrate temperature (T{sub s}) on the growth characteristics and the properties of a-SiCN:H films was evaluated. The properties of the films were investigated via scanning electron microscopy (SEM), atomic force microscopy (AFM) for surface morphological analyses, Fourier transform infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS) for chemical and compositional analyses; spectroscopic ellipsometry for optical properties and thickness determination and nanoindentation to determine the mechanical properties of the a-SiCN:H films. Films deposited at low T{sub s} depict organic like features, while the films deposited at high T{sub s} depict ceramic like features. FTIR and XPS studies reveal that an increases in T{sub s} helps in the elimination of organic moieties and incorporation of nitrogen in the film. Films deposited at T{sub s} of 425 C have an index of refraction (n) of 1.84 and hardness (H) of 14.8 GPa. A decrease in the deposition rate between T{sub s} of 25 and 250 C and increase in deposition rate between T{sub s} of 250 and 425 C indicate that the growth of a-SiCN:H films at lower T{sub s} are surface reaction controlled, while at high temperatures film growth is mass-transport controlled. Based on the experimental results, a potential route for film growth is proposed.

  18. Depositing highly adhesive optical thin films on acrylic substrates.

    PubMed

    Takahashi, Tomoaki; Harada, Toshinori; Murotani, Hiroshi; Matumoto, Shigeharu

    2014-02-01

    Optical thin films are used to control the reflectance and transmittance of optical components. However, conventional deposition technologies applicable to organic (plastic) substrates typically result in weak adhesion. We overcame this problem by using vacuum deposition in combination with sputtering to directly deposit a SiO2 optical thin film onto an acrylic resin substrate. We observed neither yellowing nor deformation. The hardness of the film is 2H as measured by the pencil hardness test, indicating successful modulation of optical properties without sacrificing substrate hardness.

  19. Electronic processes in thin-film PV materials. Final report

    SciTech Connect

    Taylor, P.C.; Chen, D.; Chen, S.L.

    1998-07-01

    The electronic and optical processes in an important class of thin-film PV materials, hydrogenated amorphous silicon (a-Si:H) and related alloys, have been investigated using several experimental techniques designed for thin-film geometries. The experimental techniques include various magnetic resonance and optical spectroscopies and combinations of these two spectroscopies. Two-step optical excitation processes through the manifold of silicon dangling bond states have been identifies as important at low excitation energies. Local hydrogen motion has been studied using nuclear magnetic resonance techniques and found to be much more rapid than long range diffusion as measured by secondary ion mass spectroscopy. A new metastable effect has been found in a-Si:H films alloyed with sulfur. Spin-one optically excited states have been unambiguously identified using optically detected electron spin resonance. Local hydrogen bonding in microcrystalline silicon films has been studied using NMR.

  20. The Thin Oil Film Equation

    NASA Technical Reports Server (NTRS)

    Brown, James L.; Naughton, Jonathan W.

    1999-01-01

    A thin film of oil on a surface responds primarily to the wall shear stress generated on that surface by a three-dimensional flow. The oil film is also subject to wall pressure gradients, surface tension effects and gravity. The partial differential equation governing the oil film flow is shown to be related to Burgers' equation. Analytical and numerical methods for solving the thin oil film equation are presented. A direct numerical solver is developed where the wall shear stress variation on the surface is known and which solves for the oil film thickness spatial and time variation on the surface. An inverse numerical solver is also developed where the oil film thickness spatial variation over the surface at two discrete times is known and which solves for the wall shear stress variation over the test surface. A One-Time-Level inverse solver is also demonstrated. The inverse numerical solver provides a mathematically rigorous basis for an improved form of a wall shear stress instrument suitable for application to complex three-dimensional flows. To demonstrate the complexity of flows for which these oil film methods are now suitable, extensive examination is accomplished for these analytical and numerical methods as applied to a thin oil film in the vicinity of a three-dimensional saddle of separation.

  1. Thin-film metal hydrides.

    PubMed

    Remhof, Arndt; Borgschulte, Andreas

    2008-12-01

    The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis.

  2. Thickness-dependent phase transformation in nanoindented germanium thin films.

    PubMed

    Oliver, D J; Bradby, J E; Williams, J S; Swain, M V; Munroe, P

    2008-11-26

    We investigate the mechanical response of 50-600 nm epitaxial Ge films on a Si substrate using nanoindentation with a nominally spherical (R≈4.3 µm) diamond tip. The inelastic deformation mechanism is found to depend critically on the film thickness. Sub-100 nm Ge films deform by pressure-induced phase transformation, whereas thicker films deform only by shear-induced dislocation slip and twinning. Nanoindentation fracture response is similarly dependent on film thickness. Elastic stress modelling shows that differing stress modes vary in their spatial distribution, and consequently the film thickness governs the stress state in the film, in conjunction with the radius of the nanoindenter tip. This opens the prospect of tailoring the contact response of Ge and related materials in thin film form by varying film thickness and indenter radius.

  3. Drying of thin colloidal films

    NASA Astrophysics Data System (ADS)

    Routh, Alexander F.

    2013-04-01

    When thin films of colloidal fluids are dried, a range of transitions are observed and the final film profile is found to depend on the processes that occur during the drying step. This article describes the drying process, initially concentrating on the various transitions. Particles are seen to initially consolidate at the edge of a drying droplet, the so-called coffee-ring effect. Flow is seen to be from the centre of the drop towards the edge and a front of close-packed particles passes horizontally across the film. Just behind the particle front the now solid film often displays cracks and finally the film is observed to de-wet. These various transitions are explained, with particular reference to the capillary pressure which forms in the solidified region of the film. The reasons for cracking in thin films is explored as well as various methods to minimize its effect. Methods to obtain stratified coatings through a single application are considered for a one-dimensional drying problem and this is then extended to two-dimensional films. Different evaporative models are described, including the physical reason for enhanced evaporation at the edge of droplets. The various scenarios when evaporation is found to be uniform across a drying film are then explained. Finally different experimental techniques for examining the drying step are mentioned and the article ends with suggested areas that warrant further study.

  4. Thin film of biocompatible polysaccharides

    NASA Astrophysics Data System (ADS)

    Richert, Ludovic; Lavalle, Philippe; Schaaf, Pierre; Voegel, Jean-Claude; Picart, Catherine

    2003-03-01

    The layer-by-layer deposition method proposed by Decher et al. (1991) is a very simple and versatile method used to build thin films. These films are of interest for bioengineering because of their unique properties and of the possible insertion of bioactive molecules. We present here the peculiar properties of a new kind of film formed with natural biopolymers, namely hyaluronan (HA)and chitosan (CHI). The films may be used as biomimetic substrates to control bacterial and cell adhesion. These polysaccharides are of particular interest because they are biodegradable, non toxic, and can be found in various tissues. Hyaluronan is also a natural ligand for a numerous type of cells through the CD44 receptor. Chitosan has already largely been used for its biological and anti-microbial properties. (CHI/HA) films were built in acidic pH at different ionic strength. The buildup was followed in situ by optical waveguide lightmode spectroscopy (OWLS), quartz crystal microbalance, streaming potential measurements and atomic force microscopy. The kinetics of adsorption and desorption of the polyelectrolytes depended on the ionic strength. Small islands were initially present on the surface which grew by mutual coalescence until becoming a flat film. The films were around 200 nm in thickness. These results suggest that different types of thin films constituted of polysaccharides can be built on any type of surface. These films are currently investigated toward their cell adhesion and bacterial adhesion properties.

  5. (Thin films under chemical stress)

    SciTech Connect

    Not Available

    1990-01-01

    As stated above the purpose of this research is to enable workers in a variety of fields to understand the chemical and physical changes which take place when thin films (primarily organic films) are placed under chemical stress. This stress may occur because the film is being swelled by penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). These questions are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers, which might have unique functional properties. In the past year we have concentrated on the following objectives: (1) understanding how the two possible diffusion mechanisms contribute to the swelling of thin films of organic polymers place in solution, (2) identifying systems which are appropriate polymer media for the construction of composite membranes for use in aqueous environments, and (3) understanding the self-assembly process for long chain fatty acids at model surfaces. Progress in meeting each of these objectives will be described in this report. 4 figs.

  6. Thin-film forces in pseudoemulsion films

    SciTech Connect

    Bergeron, V.; Radke, C.J. |

    1991-06-01

    Use of foam for enhanced oil recovery (EOR) has shown recent success in steam-flooding field applications. Foam can also provide an effective barrier against gas coning in thin oil zones. Both of these applications stem from the unique mobility-control properties a stable foam possesses when it exists in porous media. Unfortunately, oil has a major destabilizing effect on foam. Therefore, it is important for EOR applications to understand how oil destroys foam. Studies all indicate that stabilization of the pseudoemulsion film is critical to maintain foam stability in the presence of oil. Hence, to aid in design of surfactant formulations for foam insensitivity to oil the authors pursue direct measurement of the thin-film or disjoining forces that stabilize pseudoemulsion films. Experimental procedures and preliminary results are described.

  7. LOW POWER THIN MAGNETIC FILM MEMORY

    DTIC Science & Technology

    COATINGS, *MEMORY DEVICES, *DATA STORAGE SYSTEMS, *MAGNETIC MATERIALS, *THIN FILM STORAGE DEVICES, DIODES, ELECTRIC CONNECTORS, MAGNETIC CORES, MAGNETIC PROPERTIES, METAL FILMS, SILICON COMPOUNDS, TEXTILE INDUSTRY , TRANSFORMERS.

  8. Beryllium thin films for resistor applications

    NASA Technical Reports Server (NTRS)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  9. Thin films under chemical stress

    SciTech Connect

    Not Available

    1991-01-01

    The goal of work on this project has been develop a set of experimental tools to allow investigators interested in transport, binding, and segregation phenomena in composite thin film structures to study these phenomena in situ. Work to-date has focuses on combining novel spatially-directed optical excitation phenomena, e.g. waveguide eigenmodes in thin dielectric slabs, surface plasmon excitations at metal-dielectric interfaces, with standard spectroscopies to understand dynamic processes in thin films and at interfaces. There have been two main scientific thrusts in the work and an additional technical project. In one thrust we have sought to develop experimental tools which will allow us to understand the chemical and physical changes which take place when thin polymer films are placed under chemical stress. In principle this stress may occur because the film is being swelled by a penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). However all work to-date has focused on obtaining a clearer understanding penetrant transport phenomena. The other thrust has addressed the kinetics of adsorption of model n-alkanoic acids from organic solvents. Both of these thrusts are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers. In addition there has been a good deal of work to develop the local technical capability to fabricate grating couplers for optical waveguide excitation. This work, which is subsidiary to the main scientific goals of the project, has been successfully completed and will be detailed as well. 41 refs., 10 figs.

  10. Techniques in Thin Film Fabrication

    DTIC Science & Technology

    1988-01-01

    introduced a novel time -of- flight (TOF) particle detector which utilized an ultra-thin plastic scintillator film as a transmission detector. In this...10ug/cm2 ) while maintaining a quite adequate signal-to-noise ratio. It offered a relatively simple and compact system for measuring flight times of...system [2]. Though the amplitude of the pulses generated by the scintil- lating film was of no real consequence in determining flight times (as long as

  11. Dielectric Composite Thin Films

    DTIC Science & Technology

    1989-11-01

    more compressive under deposition conditions, such as high temperature, low pressure or energetic ion bombardment, that produce a more densely packed...film porosity and silica content. Thus, films formed at high temperatures and low pressures , as well as under ion bombardment during deposition, have...and their mixtures were deposited on 100-300 *C substrates and under reactive gas III. RESULTS pressures of 1-10x 10- Torr 02. 02 was UHP grade with A

  12. Effect of hydrogen on the device performance and stability characteristics of amorphous InGaZnO thin-film transistors with a SiO2/SiNx/SiO2 buffer

    NASA Astrophysics Data System (ADS)

    Han, Ki-Lim; Ok, Kyung-Chul; Cho, Hyeon-Su; Oh, Saeroonter; Park, Jin-Seong

    2017-08-01

    We investigate the influence of the multi-layered buffer consisting of SiO2/SiNx/SiO2 on amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The multi-layered buffer inhibits permeation of water from flexible plastic substrates and prevents degradation of overlying organic layers. The a-IGZO TFTs with a multi-layered buffer suffer less positive bias temperature stress instability compared to the device with a single SiO2 buffer layer after annealing at 250 °C. Hydrogen from the SiNx layer diffuses into the active layer and reduces electron trapping at loosely bound oxygen defects near the SiO2/a-IGZO interface. Quantitative analysis shows that a hydrogen density of 1.85 × 1021 cm-3 is beneficial to reliability. However, the multi-layered buffer device annealed at 350 °C resulted in conductive characteristics due to the excess carrier concentration from the higher hydrogen density of 2.12 × 1021 cm-3.

  13. Thin film-coated polymer webs

    DOEpatents

    Wenz, Robert P.; Weber, Michael F.; Arudi, Ravindra L.

    1992-02-04

    The present invention relates to thin film-coated polymer webs, and more particularly to thin film electronic devices supported upon a polymer web, wherein the polymer web is treated with a purifying amount of electron beam radiation.

  14. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  15. Low work function, stable thin films

    DOEpatents

    Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

    2000-01-01

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  16. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  17. Reliability and engineering of thin-film photovoltaic modules

    NASA Technical Reports Server (NTRS)

    Royal, E. L.

    1985-01-01

    Objectives were to: examine thin-film cell attributes that influence module performance and reliability, explore the lessons and applicability of crystalline-silicon module technology to thin-film modules, review the current status of thin-film module technologies, and identify problem areas and needed research. A major need is to separate the effects and resons for reversible degradatin from nonreversible degradation. Amorphous-silicon (a-Si) reliability investigations are focusing on exploratory research investigations, accelerated Arrhenius-type testing of a-Si cells, real-time outdoor exposure testing of a-Si cells, cell failure analysis, and failure mechanism research. Studies included the reduction in strength of glass by high temperature depositions on glass and laser scribing, encapsulation materials development needs, and the testing of modules. The new materials and processes in thin-film modules will require a delinquent reliability effort, including: establishment of mechanism-specific reliability goals; quantification of mechanism parameter dependencies; prediction of expected long-term degradation; identification of cost-effective solutions; and testing and failure analysis of trial solutions.

  18. Silicon surface passivation by polystyrenesulfonate thin films

    NASA Astrophysics Data System (ADS)

    Chen, Jianhui; Shen, Yanjiao; Guo, Jianxin; Chen, Bingbing; Fan, Jiandong; Li, Feng; Liu, Haixu; Xu, Ying; Mai, Yaohua

    2017-02-01

    The use of polystyrenesulfonate (PSS) thin films in a high-quality passivation scheme involving the suppression of minority carrier recombination at the silicon surface is presented. PSS has been used as a dispersant for aqueous poly-3,4-ethylenedioxythiophene. In this work, PSS is coated as a form of thin film on a Si surface. A millisecond level minority carrier lifetime on a high resistivity Si wafer is obtained. The film thickness, oxygen content, and relative humidity are found to be important factors affecting the passivation quality. While applied to low resistivity silicon wafers, which are widely used for photovoltaic cell fabrication, this scheme yields relatively shorter lifetime, for example, 2.40 ms on n-type and 2.05 ms on p-type wafers with a resistivity of 1-5 Ω.cm. However, these lifetimes are still high enough to obtain high implied open circuit voltages (Voc) of 708 mV and 697 mV for n-type and p-type wafers, respectively. The formation of oxides at the PSS/Si interface is suggested to be responsible for the passivation mechanism.

  19. Lithographic Micropatterning of Polythiophene Thin-Films.

    DTIC Science & Technology

    OXYGEN, POLYMERS, PROCESSING, PROPANOLS, REACTIVITIES, REFRACTIVE INDEX, REPRODUCTION(COPYING), SEMICONDUCTORS, SILICATES, SOLVENTS, STRUCTURES, SURFACE PROPERTIES, THICKNESS, THIN FILMS , THIOPHENES.

  20. Effect of Deposition Conditions on Intrinsic Stress in a-Si: H Films

    NASA Astrophysics Data System (ADS)

    Ozawa, Kiyoshi; Takagi, Nobuyoshi; Asama, Kunihiko

    1983-05-01

    Intrinsic stress in the a-Si: H film, which reflects the internal microstructure of the film under deposition and thus gives the information about the construction of amorphous network, has been evaluated by the Baser interferometric method. The intrinsic stress induced in the a-Si: H film is compressive and increases with the deposition temperature. As the intrinsic compressive stress is increased, decreases are observed in the deposition rate, the total hydrogen concentration, and the ratio of hydrogen concentration with the configuration SiH2, SiH3, and (SiH2)n to that with SiH. These results on the temperature dependence of a-Si: H film growth indicate that the contribution of excited species in the plasma to the growth of the a-Si: H is restricted by the intrinsic compressive stress induced in the a-Si: H through differences in molecular dimensions of the excited species.

  1. Thermopower of thin iron films

    NASA Astrophysics Data System (ADS)

    Schepis, Randy; Schröder, Klaus

    1992-02-01

    Thin iron films were prepared by evaporation in a high vacuum system (pressure in the 10 -5 MPa range). The thermopower was measured in situ near room temperature as a function of film thickness. Iron films with rather high resistivity values showed a strong thickness effect of the Seeback coefficient, S, with the difference between S (bulk) and S (film) reaching values of up to (19±3) μV/K for a sample 5 nm thick. The difference between S (bulk) and S (film) decreased with increasing d values. However, a sample with a resistance value of 50 μΩ cm at d = 5 n had an S value which differed by less than 3 μV/K from S (bulk).

  2. Thin films and uses

    DOEpatents

    Baskaran, Suresh; Graff, Gordon L.; Song, Lin

    1998-01-01

    The invention provides a method for synthesizing a titanium oxide-containing film comprising the following steps: (a) preparing an aqueous solution of a titanium chelate with a titanium molarity in the range of 0.01M to 0.6M. (b) immersing a substrate in the prepared solution, (c) decomposing the titanium chelate to deposit a film on the substrate. The titanium chelate maybe decomposed acid, base, temperature or other means. A preferred method provides for the deposit of adherent titanium oxide films from C2 to C5 hydroxy carboxylic acids. In another aspect the invention is a novel article of manufacture having a titanium coating which protects the substrate against ultraviolet damage. In another aspect the invention provides novel semipermeable gas separation membranes, and a method for producing them.

  3. Thin film polymeric gel electrolytes

    DOEpatents

    Derzon, Dora K.; Arnold, Jr., Charles; Delnick, Frank M.

    1996-01-01

    Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

  4. Thin film polymeric gel electrolytes

    DOEpatents

    Derzon, D.K.; Arnold, C. Jr.; Delnick, F.M.

    1996-12-31

    Novel hybrid thin film electrolytes, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1} cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

  5. Thin Film Solid Lubricant Development

    NASA Technical Reports Server (NTRS)

    Benoy, Patricia A.

    1997-01-01

    Tribological coatings for high temperature sliding applications are addressed. A sputter-deposited bilayer coating of gold and chromium is investigated as a potential solid lubricant for protection of alumina substrates during sliding at high temperature. Evaluation of the tribological properties of alumina pins sliding against thin sputtered gold films on alumina substrates is presented.

  6. Center for Thin Film Studies

    DTIC Science & Technology

    1988-10-31

    Determination of the Thickness and Optical Constants of Thin Metallic Films," J. Opt. Soc. Am. 71. 189 (1981). 24. F. Abeles and T. Lopez -Rios...Burton, N. Cabrera , & F. C. Frank, "The Growth of Crystals and the Equilibrium Structure of Their Surfaces", Phil. Trans. Roy. Soc., A23, 299-358 (1951

  7. Thin Film Phosphor Development

    DTIC Science & Technology

    1989-01-01

    followed in Fig. 1. Two different garnet phases are observed in the fired films. The "low temperature " phase observed in the film treated at 9(X)°C has a... garnets ,1 121 thle experimentall~v-ob,•crved lattice constar.als correspond to the followving lmh composition for the low and high temperature phases...deposited, which is probably an yttrium rich garnet (see Figure 1). At I100)°C we start to see the appearance of both phases. As the firing temperature

  8. Optoelectronic Nanocomposite Materials for Thin Film Photovoltaics

    DTIC Science & Technology

    2012-06-01

    CdTe and ZnO single-phase thin films , nanocomposite films ...for the CdTe -ZnO thin film system under these conditions. c. Optical Absorption The films produced in the present study consistently exhibited...optical absorbance spectra collected from CdTe -ZnO multilayer nanocomposite thin films . The effect of CdTe layer thickness used per deposition cycle

  9. A thin film strain transducer

    NASA Technical Reports Server (NTRS)

    Rand, J. L.

    1983-01-01

    A device has been developed for the purpose of measuring longitudinal strain in thin polyethylene films. This paper describes the design, development, calibration, and application of this unique transducer in a variety of low temperature environments. This thin, ring-shaped device has a low effective modulus so as not to interfere with the strain that would naturally occur in a thin film. It has a standard 350 ohm impedance which is compatible with most available bridge balance, amplification, and telemetry instrumentation. This transducer has been successfully used for viscoelastic material characterization experiments in the laboratory, as well as in flight measurements of strain on the surface of scientific balloons during inflation, launch, ascent, and float.

  10. In-situ monitoring of surface hydrogen on the a-SiGe:H films

    SciTech Connect

    Toyoshima, Y.; Ganguly, G.; Ikeda, T.; Saitoh, K.; Kondo, M.; Matsuda, A.

    1997-07-01

    The bonded hydrogen on the growing surface of hydrogenated amorphous silicon germanium (a-SiGe:H) alloy films has been investigated by use of infrared reflection absorption spectroscopy (IR-RAS). When the alloy films are Si-rich, the surface hydrogen bonded to Si atoms is found to behave in a similar way to those on the hydrogenated amorphous silicon (a-Si:H) films. This means that the thermal desorption stability of surface Si hydride species is not significantly affected by the coexistence of a small amount (typically 20 at.%) of Ge. On the contrary, the desorption behavior of surface hydrogen depends on the alloy composition when the a-SiGe:H films are Ge-rich. A surface reaction scheme is provided in an attempt to explain this series of behavior in surface hydrogen on the a-SiGe:H films.

  11. Selective inorganic thin films

    SciTech Connect

    Phillips, M.L.F.; Pohl, P.I.; Brinker, C.J.

    1997-04-01

    Separating light gases using membranes is a technology area for which there exists opportunities for significant energy savings. Examples of industrial needs for gas separation include hydrogen recovery, natural gas purification, and dehydration. A membrane capable of separating H{sub 2} from other gases at high temperatures could recover hydrogen from refinery waste streams, and facilitate catalytic dehydrogenation and the water gas shift (CO + H{sub 2}O {yields} H{sub 2} + CO{sub 2}) reaction. Natural gas purification requires separating CH{sub 4} from mixtures with CO{sub 2}, H{sub 2}S, H{sub 2}O, and higher alkanes. A dehydrating membrane would remove water vapor from gas streams in which water is a byproduct or a contaminant, such as refrigeration systems. Molecular sieve films offer the possibility of performing separations involving hydrogen, natural gas constituents, and water vapor at elevated temperatures with very high separation factors. It is in applications such as these that the authors expect inorganic molecular sieve membranes to compete most effectively with current gas separation technologies. Cryogenic separations are very energy intensive. Polymer membranes do not have the thermal stability appropriate for high temperature hydrogen recovery, and tend to swell in the presence of hydrocarbon natural gas constituents. The authors goal is to develop a family of microporous oxide films that offer permeability and selectivity exceeding those of polymer membranes, allowing gas membranes to compete with cryogenic and adsorption technologies for large-scale gas separation applications.

  12. Thin film buried anode battery

    DOEpatents

    Lee, Se-Hee; Tracy, C. Edwin; Liu, Ping

    2009-12-15

    A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

  13. Scanning tunneling microscopy studies of the surfaces of a-Si:H and a-SiGe:H films

    SciTech Connect

    Gallagher, A.; Ostrom, R.; Tannenbaum, D. )

    1991-06-01

    The report contains a detailed description of the experimental complexities encountered in developing scanning tunneling microscope (STM) probing of atomic structure on the surface of freshly-grown hydrogenated-amorphous semiconductors. It also contains a speculative microscopic film-growth model that explains differences between the disorder in CVD grown a-Ge:H versus a-Si:H films. This model is derived from prior results obtained in the chemical analysis of GeH{sub 4} plasmas, combined with surface reaction and thermodynamic considerations. The neutral radical fragments of silane, disilane and germane dissociation in discharges, which dominate the vapor and film-growth reactions, have been deduced from detailed analysis of prior data and are reported. 4 refs., 7 figs.

  14. Comparison of crystallization kinetics in a-Si/Cu and a-Si/Al bilayer recording films under thermal annealing and pulsed laser irradiation

    NASA Astrophysics Data System (ADS)

    Her, Yung-Chiun; Chen, Chih-Wei; Wu, Chun-Lin

    2006-06-01

    Under thermal annealing, the crystallization temperatures of a-Si in a-Si/Cu and a-Si/Al bilayer recording films were significantly reduced to around 485 and 357 °C, respectively, and the activation energies for crystallization were reduced to about 3.3 eV. The formation of Cu3Si phase prior to crystallization of a-Si was found to occur at around 175 °C in a-Si/Cu, while no Al silicide was observed in a-Si/Al before crystallization of a-Si. The reaction exponents for a-Si/Cu and a-Si/Al were determined to be around 1.8 and 1.6, respectively, corresponding to a crystallization process in which grain growth occurs with nucleation, and the nucleation rate decreases with the progress of grain growth. Under pulsed laser irradiation, the precipitation of Cu3Si phases and crystallization of a-Si were observed in a-Si/Cu, while the crystallization and reamorphization of a-Si took place sequentially in a-Si/Al. The reaction exponents for a-Si/Cu and a-Si/Al, determined to be about 2.0 and 2.2, respectively, are slightly higher than those under thermal annealing, indicating that the crystallization processes of a-Si/Cu and a-Si/Al under pulsed laser irradiation are similar to those under thermal annealing. However, the decrease of nucleation rate with the progress of grain growth is slower. At the same time, the activation energies for crystallization of a-Si/Cu and a-Si/Al, estimated to be about 0.18 and 0.22 eV, respectively, are nearly an order of magnitude lower than those under thermal annealing. This may be explained by the explosive crystallization of a-Si by mechanical impact, with a high power pulsed laser.

  15. Laminated thin film solar module

    SciTech Connect

    Berman, E.; Eisner, K.P.

    1986-11-25

    This patent describes a solar module comprising: a first untempered glass sheet having a first side forming a light receiving face of a solar module and a second side, a thin film photovoltaic device fabricated on the second side of the first glass sheet, a second tempered glass sheet spaced from the second side of the first sheet and forming the primary structural member of the solar module; and a pottant layer filling substantially all space between the first and second glass sheets and bonding the sheets together. This patent describes a solar module according to claim 1 further including a second thin film photovoltaic device fabricated on a surface of the second tempered glass sheet.

  16. Thin film trichloroethylene electrochemical sensor.

    PubMed

    Chen, Min-Hua; Liu, Chung-Chiun; Chou, Tse-Chuan

    2004-07-30

    Pt-Ti and Pb-Pt-Ti thin films were deposited on alumina substrates by sputtering in Ar gas. In this study, an electrodeposited Pb-modified Pt-Ti thin film working electrode was prepared. Optimal sensing conditions were found to be -2.10 V (versus Ag/Ag+ with 0.1 M tetrabutylammonium perchlorate (TBAP) in acetonitrile (AN) solution) sensing potential, 250 rpm agitation rate. At room temperature, the response time was 15 s (90% response time). The correlation of sensing response current, id, and trichloroethylene (TCE) concentration, CL, is id = 2.86CL in the range from 100 to 700 ppm TCE. Additionally, the rate constant of (TCE) cathodic reduction was found to be 2.434 x 10(-3) cm(-1) s(-1).

  17. Flexible thin film magnetoimpedance sensors

    NASA Astrophysics Data System (ADS)

    Kurlyandskaya, G. V.; Fernández, E.; Svalov, A.; Burgoa Beitia, A.; García-Arribas, A.; Larrañaga, A.

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz.

  18. Thin film concentrator panel development

    NASA Technical Reports Server (NTRS)

    Zimmerman, D. K.

    1982-01-01

    The development and testing of a rigid panel concept that utilizes a thin film reflective surface for application to a low-cost point-focusing solar concentrator is discussed. It is shown that a thin film reflective surface is acceptable for use on solar concentrators, including 1500 F applications. Additionally, it is shown that a formed steel sheet substrate is a good choice for concentrator panels. The panel has good optical properties, acceptable forming tolerances, environmentally resistant substrate and stiffeners, and adaptability to low to mass production rates. Computer simulations of the concentrator optics were run using the selected reflector panel design. Experimentally determined values for reflector surface specularity and reflectivity along with dimensional data were used in the analysis. The simulations provided intercept factor and net energy into the aperture as a function of aperture size for different surface errors and pointing errors. Point source and Sun source optical tests were also performed.

  19. Thermal stability of hydrogen and sulfur atoms in a-SiSx:H films

    NASA Astrophysics Data System (ADS)

    Itoh, Takashi; Nitta, Shoji; Wang, S. L.; Taylor, P. C.

    1996-11-01

    The thermal stability of hydrogen and sulfur atoms in a-SiSx:H films is studied using gas effusion spectra and electron spectroscopy for chemical analysis. Two evolution peaks of hydrogen are found above 400 °C in gas effusion spectra of a-SiSx:H films. Sulfur atoms are evolved only above 550 °C. The stability of sulfur and the relationship of dangling bonds to sulfur effusion are discussed.

  20. High-rate RPECVD of a-Si:H films by means of a VHF resonant plasma source

    SciTech Connect

    Blum, T.; Suchaneck, G.; Kuske, J.; Stephan, U.; Kottwitz, A.; Beyer, W.

    1996-12-31

    Thin film polycrystalline silicon on large-area glass substrate is a promising material for low-cost high efficiency solar cells. High deposition rate (up to 5 nm/s) a-Si:H films suitable for recrystallization were deposited using a {lambda}/4 helical resonator source. Refractive index, Tauc-gap, photo- and dark conductivities were measured for film characterization. The metastable behavior was characterized by the light-induced degradation of the photoconductivity. Hydrogen content and bonding configuration were analyzed by IR absorption and mass separated thermal fusion transients, film microstructure was studied by intentionally incorporating carbon and oxygen. Most of the hydrogen is located on internal surfaces in the otherwise dense material. Differences between the deposition from the highly excited plasma and the conventional remote PECVD process are discussed.

  1. Atmospheric-pressure plasma-enhanced chemical vapor deposition of a-SiCN:H films: Role of precursors on the film growth and properties

    SciTech Connect

    Guruvenket, Srinivasan; Andrie, Steven; Simon, Mark; Johnson, Kyle W.; Sailer, Robert A.

    2012-09-14

    Atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) using Surfx AtomflowTM 250D APPJ was utilized to synthesize amorphous silicon carbonitride coatings using tetramethyldisilizane (TMDZ) and hexamethyldisilizane (HMDZ) as the single source precursors. The effect of precursor chemistry and the substrate temperature (Ts) on the properties of a-SiCN:H films were evaluated, while nitrogen was used as the reactive gas. Surface morphology of the films was evaluated using atomic force microscopy (AFM); chemical properties were determined using Fourier transform infrared spectroscopy (FTIR); thickness and optical properties were determined using spectroscopic ellipsometry and mechanical properties were determined using nano-indentation. In general films deposited at substrate temperature (Ts) <200 °C contained organic moieties, while the films deposited at Ts >200 oC depicted strong Si-N and Si-CN absorption. Refractive indices (n) of the thin films showed values between 1.5 -2.0 depending on the deposition parameters. Mechanical properties of the films determined using nano-indentation revealed that these films have hardness between 0.5 GPa to 15 GPa depending on the Ts. AFM evaluation of the films showed high roughness (Ra) values of 2-3 nm for the films grown at low Ts (< 250 °C), while the films grown at Ts ≥ 300 °C exhibited atomically smooth surface with Ra of ~ 0.5 nm. Furthermore, based on the gas phase (plasma) chemistry, precursor chemistry and the other experimental observations, a possible growth model that prevails in the AP-PECVD of a-SiCN:H thin films is proposed.

  2. Atmospheric-pressure plasma-enhanced chemical vapor deposition of a-SiCN:H films: Role of precursors on the film growth and properties

    DOE PAGES

    Guruvenket, Srinivasan; Andrie, Steven; Simon, Mark; ...

    2012-09-14

    Atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) using Surfx AtomflowTM 250D APPJ was utilized to synthesize amorphous silicon carbonitride coatings using tetramethyldisilizane (TMDZ) and hexamethyldisilizane (HMDZ) as the single source precursors. The effect of precursor chemistry and the substrate temperature (Ts) on the properties of a-SiCN:H films were evaluated, while nitrogen was used as the reactive gas. Surface morphology of the films was evaluated using atomic force microscopy (AFM); chemical properties were determined using Fourier transform infrared spectroscopy (FTIR); thickness and optical properties were determined using spectroscopic ellipsometry and mechanical properties were determined using nano-indentation. In general films depositedmore » at substrate temperature (Ts) <200 °C contained organic moieties, while the films deposited at Ts >200 oC depicted strong Si-N and Si-CN absorption. Refractive indices (n) of the thin films showed values between 1.5 -2.0 depending on the deposition parameters. Mechanical properties of the films determined using nano-indentation revealed that these films have hardness between 0.5 GPa to 15 GPa depending on the Ts. AFM evaluation of the films showed high roughness (Ra) values of 2-3 nm for the films grown at low Ts (< 250 °C), while the films grown at Ts ≥ 300 °C exhibited atomically smooth surface with Ra of ~ 0.5 nm. Furthermore, based on the gas phase (plasma) chemistry, precursor chemistry and the other experimental observations, a possible growth model that prevails in the AP-PECVD of a-SiCN:H thin films is proposed.« less

  3. Potential of thin-film solar cell module technology

    NASA Technical Reports Server (NTRS)

    Shimada, K.; Ferber, R. R.; Costogue, E. N.

    1985-01-01

    During the past five years, thin-film cell technology has made remarkable progress as a potential alternative to crystalline silicon cell technology. The efficiency of a single-junction thin-film cell, which is the most promising for use in flat-plate modules, is now in the range of 11 percent with 1-sq cm cells consisting of amorphous silicon, CuInSe2 or CdTe materials. Cell efficiencies higher than 18 percent, suitable for 15 percent-efficient flat plate modules, would require a multijunction configuration such as the CdTe/CuInSe2 and tandem amorphous-silicon (a-Si) alloy cells. Assessments are presented of the technology status of thin-film-cell module research and the potential of achieving the higher efficiencies required for large-scale penetration into the photovoltaic (PV) energy market.

  4. Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique

    DOEpatents

    Wang, Qi; Iwaniczko, Eugene

    2006-10-17

    A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.

  5. Oxynitride Thin Film Barriers for PV Packaging

    SciTech Connect

    Glick, S. H.; delCueto, J. A.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2005-11-01

    Dielectric thin-film barrier and adhesion-promoting layers consisting of silicon oxynitride materials (SiOxNy, with various stoichiometry) were investigated. For process development, films were applied to glass (TCO, conductive SnO2:F; or soda-lime), polymer (PET, polyethylene terephthalate), aluminized soda-lime glass, or PV cell (a-Si, CIGS) substrates. Design strategy employed de-minimus hazard criteria to facilitate industrial adoption and reduce implementation costs for PV manufacturers or suppliers. A restricted process window was explored using dilute compressed gases (3% silane, 14% nitrous oxide, 23% oxygen) in nitrogen (or former mixtures, and 11.45% oxygen mix in helium and/or 99.999% helium dilution) with a worst-case flammable and non-corrosive hazard classification. Method employed low radio frequency (RF) power, less than or equal to 3 milliwatts per cm2, and low substrate temperatures, less than or equal to 100 deg C, over deposition areas less than or equal to 1000 cm2. Select material properties for barrier film thickness (profilometer), composition (XPS/FTIR), optical (refractive index, %T and %R), mechanical peel strength and WVTR barrier performance are presented.

  6. Photoconductivity of thin organic films

    NASA Astrophysics Data System (ADS)

    Tkachenko, Nikolai V.; Chukharev, Vladimir; Kaplas, Petra; Tolkki, Antti; Efimov, Alexander; Haring, Kimmo; Viheriälä, Jukka; Niemi, Tapio; Lemmetyinen, Helge

    2010-04-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 μm), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene ( PHT), fullerene ( C60), pyrelene tetracarboxylic diimide ( PTCDI) and copper phthalocyanine ( CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C60 and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 × 10 3 Ω m and 3 × 10 4 Ω m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 × 10 8 Ω m in dark to 3.1 × 10 6 Ω m under the light.

  7. Thin-Film Selective Emitter

    NASA Technical Reports Server (NTRS)

    Chubb, Donald L.; Lowe, Roland A.

    1993-01-01

    Direct conversion of thermal energy into electrical energy using a photovoltaic cell is called thermophotovoltaic energy conversion. One way to make this an efficient process is to have the thermal energy source be an efficient selective emitter of radiation. The emission must be near the band-gap energy of the photovoltaic cell. One possible method to achieve an efficient selective emitter is the use of a thin film of rare-earth oxides. The determination of the efficiency of such an emitter requires analysis of the spectral emittance of the thin film including scattering and reflectance at the vacuum-film and film-substrate interfaces. Emitter efficiencies (power emitted in emission band/total emitted power) in the range 0.35-0.7 are predicted. There is an optimum optical depth to obtain maximum efficiency. High emitter efficiencies are attained only for low (less than 0.05) substrate emittance values, both with and without scattering. The low substrate emittance required for high efficiency limits the choice of substrate materials to highly reflective metals or high-transmission materials such as sapphire.

  8. Silicon carbide thin films with different processing growth as an alternative for energetic application

    NASA Astrophysics Data System (ADS)

    Ouadfel, A. M.; Keffous, A.; Kheloufi, A.; Cheriet, A.; Yaddaden, C.; Gabouze, N.; Kechouane, M.; Belkacem, Y.; Boukezzata, A.; Kaci, S.; Talbi, L.; Ouadah, Y.; Bozetine, I.; Rezgui, B.; Guerbous, L.; Menari, H.; Mahmoudi, B.; Menous, I.

    2017-03-01

    Different SiC thin film structures were obtained depending on the deposition techniques. Crystalline films were grown using a Pulsed laser deposition (PLD), in contrary the sputtering DC magnetron method allow to have an amorphous films (a-SiC:H and a-Si1-xCx:H). A comparative study of the structural and optical characteristics of the elaborated films has been performed. The energetic application possibilities such as blue or multicolor LEDs have been explored. Different techniques have been used to investigate the elaborated films such as SEM-EDS, SIMS, photoluminescence and spectral response.

  9. Semiconducting Thin-Film Sensors for Detection of Polluting Gases and Floating Particles

    NASA Astrophysics Data System (ADS)

    Yokoyama, Tatsuya; Hara, Kazuhiro

    A micro sensor for polluting gases and organic floating particles has been developed. The sensor is composed of two parts: a sensing element and a micro heater. Both parts are fabricated using thin-film technology, IC fabrication, and a micromachining technique. The sensing film has a double-layered structure; the first layer is a Fe2O3-based thin-film and the second layer is a SnO2-based thin-film. They are deposited by r.f. sputtering on a SiO2/Al2O3/SiO2 diaphragm formed on a Si substrate. A thin-film heater is also fabricated on a similar diaphragm on another Si substrate. The sensing element and the micro heater are placed in parallel at a distance of about 50μm. The sensor is sensitive to polluting gases such as NOX, exhaust gases, cigarette smoke, and organic floating particles such as pollen.

  10. Crystallization kinetics and recording characteristics of Cu/a-Si bilayer recording film for write-once Blu-ray disk

    NASA Astrophysics Data System (ADS)

    Her, Yung-Chiun; Wu, Chun-Lin

    2004-09-01

    The crystallization kinetics and recording characteristics of the Cu/a-Si bilayer recording film have been studied. Under thermal annealing, the crystallization temperature and activation energy for crystallization of a-Si with a thin Cu metal layer were reduced to about 485°C and 3.3+/-0.1 eV, respectively, indicating that inserting a thin Cu underlayer could effectively reduce the crystallization temperature and activation energy for crystallization of a-Si. The reaction exponent was determined to be around 1.8, corresponding to a crystallization process in which grain growth occurs with nucleation, and the nucleation rate decreases with the progress of the grain growth process. This is consistent with the hypothesis that the Cu3Si precipitates act as the nucleation sites for the subsequent crystallization of a-Si in the Cu/a-Si bilayer recording film. Additionally, the maximum data-transfer-rates that can be achieved by the Cu/a-Si bilayer recording film at recording powers of 6, 8, and 10 mW were estimated to be about 23, 46, and 223 Mb/s, respectively.

  11. MCP performance improvement using alumina thin film

    NASA Astrophysics Data System (ADS)

    Yang, Yuzhen; Yan, Baojun; Liu, Shulin; Zhao, Tianchi; Yu, Yang; Wen, Kaile; Li, Yumei; Qi, Ming

    2017-10-01

    The performance improvement using alumina thin film on a dual microchannel plate (MCP) detector for single electron counting was investigated. The alumina thin film was coated on all surfaces of the MCPs by atomic layer deposition method. It was found that the gain, the single electron resolution and the peak-to-valley ratio of the dual MCP detector were significantly enhanced by coating the alumina thin film. The optimum operating conditions of the new dual MCP detector have been studied.

  12. Ion Implantation of Zinc Sulphide Thin Films,

    DTIC Science & Technology

    The report considers the use of ion implantation as a means of preparing rare earth doped thin films of zinc sulphide, and presents preliminary results on the luminescence of such films doped with Tb and Er166 ions. (Author)

  13. Polycrystalline silicon conductivity modulated thin film transistors

    NASA Astrophysics Data System (ADS)

    Anish, Kumar K. P.

    1997-09-01

    Polycrystalline silicon (poly-Si) thin-film transistors (TFTs) on glass has received significant attention for use in large area microelectronic applications. These applications include both niche and large volume applications such as printer drivers, image scanners, active-matrix liquid crystal displays (AMLCDs), electro-luminescent displays, plasma assisted displays, etc. Currently, the leading technology for these applications is amorphous-Si (a-Si) TFT. However, as the information content increases, a-Si technology encounters severe challenges due to its inherent low mobility, high parasitic capacitance, low aperture ratio, and non-compatibility to CMOS process. On the other hand, poly-Si technology offers high mobility, low parasitic capacitance, small size, CMOS compatibility, good stability, and uses the infrastructure of silicon science and technology. Thus, a simple low temperature poly-Si technology which allows large area system integration on panel will be in great demand for future high definition displays. However, it was found that poly-Si material properties vary with its method of preparation, its grain size, its surface roughness, and the nature and distribution of the inter-granular and bulk defects. Therefore, extensive studies are needed to optimize the key parameters such as the off-current, on-current, and breakdown voltage of the devices. These parameters can be optimized by means of material preparation as well as innovative device designs. In this thesis, three TFT structures were invented and fabricated using a simple low temperature poly-Si technology. With these novel structures, pixels, pixel drivers, and analog and digital peripheral circuits can all be built on the same glass substrate. This allows the ultimate goal of display systems on glass to be much more closer to reality. First, a high voltage transistor called the Conductivity Modulated Thin Film Transistor (CMTFT) is presented. Using this structure, the fundamental current

  14. A thin film nitinol heart valve.

    PubMed

    Stepan, Lenka L; Levi, Daniel S; Carman, Gregory P

    2005-11-01

    In order to create a less thrombogenic heart valve with improved longevity, a prosthetic heart valve was developed using thin film nitinol (NiTi). A "butterfly" valve was constructed using a single, elliptical piece of thin film NiTi and a scaffold made from Teflon tubing and NiTi wire. Flow tests and pressure readings across the valve were performed in vitro in a pulsatile flow loop. Bio-corrosion experiments were conducted on untreated and passivated thin film nitinol. To determine the material's in vivo biocompatibility, thin film nitinol was implanted in pigs using stents covered with thin film NiTi. Flow rates and pressure tracings across the valve were comparable to those through a commercially available 19 mm Perimount Edwards tissue valve. No signs of corrosion were present on thin film nitinol samples after immersion in Hank's solution for one month. Finally, organ and tissue samples explanted from four pigs at 2, 3, 4, and 6 weeks after thin film NiTi implantation appeared without disease, and the thin film nitinol itself was without thrombus formation. Although long term testing is still necessary, thin film NiTi may be very well suited for use in artificial heart valves.

  15. THIN FILMS FORMED BY ELECTROCHEMICAL REACTIONS

    DTIC Science & Technology

    ELECTROCHEMISTRY, * THIN FILMS (STORAGE DEVICES), ALUMINUM, ANODES (ELECTROLYTIC CELL), CAPACITORS, CIRCUITS, MICROMETERS, NIOBIUM, OXIDATION, RESISTORS, TANTALUM, TITANIUM, TUNGSTEN, VACUUM APPARATUS, ZIRCONIUM

  16. Analysis of Hard Thin Film Coating

    NASA Technical Reports Server (NTRS)

    Shen, Dashen

    1998-01-01

    MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  17. Analysis of Hard Thin Film Coating

    NASA Technical Reports Server (NTRS)

    Shen, Dashen

    1998-01-01

    Marshall Space Flight Center (MSFC) is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) to deposit hard thin film on stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  18. Thin film fuel cell electrodes.

    NASA Technical Reports Server (NTRS)

    Asher, W. J.; Batzold, J. S.

    1972-01-01

    Earlier work shows that fuel cell electrodes prepared by sputtering thin films of platinum on porous vycor substrates avoid diffusion limitations even at high current densities. The presented study shows that the specific activity of sputtered platinum is not unusually high. Performance limitations are found to be controlled by physical processes, even at low loadings. Catalyst activity is strongly influenced by platinum sputtering parameters, which seemingly change the surface area of the catalyst layer. The use of porous nickel as a substrate shows that pore size of the substrate is an important parameter. It is noted that electrode performance increases with increasing loading for catalyst layers up to two microns thick, thus showing the physical properties of the sputtered layer to be different from platinum foil. Electrode performance is also sensitive to changing differential pressure across the electrode. The application of sputtered catalyst layers to fuel cell matrices for the purpose of obtaining thin total cells appears feasible.

  19. Thin film solar energy collector

    DOEpatents

    Aykan, Kamran; Farrauto, Robert J.; Jefferson, Clinton F.; Lanam, Richard D.

    1983-11-22

    A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

  20. Interference effects in luminescence studies of thin films.

    PubMed

    Holm, R T; McKnight, S W; Palik, E D; Lukosz, W

    1982-07-15

    Interference effects, including multiple-beam and wide-angle, associated with luminescence from within a thin film are described. A simple geometrical model is used to calculate the s- and p-polarized luminescent light assuming electric-dipole radiation. The luminescence exhibits fringes when measured both as a function of the film thickness and as a function of the wavelength of the light. In the latter case the fringes can also show a beating effect. The model is applied to several experimental examples of cathodoluminescence in SiO(2) and an example of photoluminescence in a-Si.

  1. Uniform dehydrogenation of amorphous silicon thin films using a wide thermal annealing system

    NASA Astrophysics Data System (ADS)

    Jung, Yong Chan; Seong, Sejong; Lee, Taehoon; Ahn, Jinho; Kim, Tae Hyun; Yeo, Won-Jae; Park, In-Sung

    2017-02-01

    To prevent ablation caused by sudden hydrogen eruption during crystallization of hydrogenated amorphous Si (a-Si:H) thin films, a wide dehydrogenation thermal annealing (wDTA) system was developed to reduce hydrogen content in a-Si:H film prior to its crystallization process. The annealed a-Si:H films were fully dehydrogenated and nanocrystallized by the wDTA system. Raman scattering measurement revealed that the dehydrogenation process lowers the hydrogen content through disappearance of the peak intensity at 2000 cm-1. The a-Si:H film was transformed into nanocrystallized Si with lower residual stress. The major advantage of this wDTA was the large area uniformity of the thermal and the resulting material properties for 8 generation display. The uniform material characteristics of the hydrogen content, thickness, energy bandgap, and transmittance of the annealed Si films in the overall area was confirmed by Raman spectroscopy, spectroscopic ellipsometry, and UV-vis spectrometer measurement.

  2. Electron cyclotron resonance deposition of a-Si:H and a-C:H films

    NASA Technical Reports Server (NTRS)

    Shing, Y. H.; Yang, C. L.; Allevato, C. E.; Pool, F. S.

    1989-01-01

    Amorphous silicon (a-Si:H) and amorphous carbon (a-C:H) films have been deposited by electron cyclotron resonance (ECR) microwave plasma enhanced CVD. A high deposition rate of 25 A/sec and a light-to-dark conductivity ratio of 500,000 for a-Si:H films have been achieved by the ECR process using a pure silane plasma. ECR microwave plasmas have been analyzed by in situ optical emission spectroscopy (OES) and have shown a strong H-asterisk emission at 434 nm indicating higher chemical reactivity than RF plasmas. The linear correlation between the film deposition rate and the SiH-asterisk emission intensity of ECR silane plasma suggests that SiH-asterisk species are related to the neutral radicals which are responsible for the a-Si:H film deposition. Hard and soft a-C:H films have been deposited by ECR with and without RF bias power, respectively. The RF bias to the substrate is found to play a critical role in determining the film structure and the carbon bonding configuration of ECR deposited a-C:H films. Raman spectra of these films indicate that ECR deposition conditions can be optimized to produce diamond films.

  3. Structural properties of a-Si films and their effect on aluminum induced crystallization

    SciTech Connect

    Tankut, Aydin; Ozkol, Engin; Karaman, Mehmet; Turan, Rasit; Canli, Sedat

    2015-10-15

    In this paper, we report the influence of the structural properties of amorphous silicon (a-Si) on its subsequent crystallization behavior via the aluminum induced crystallization (AIC) method. Two distinct a-Si deposition techniques, electron beam evaporation and plasma enhanced chemical vapor deposition (PECVD), are compared for their effect on the overall AIC kinetics as well as the properties of the final poly-crystalline (poly-Si) silicon film. Raman and FTIR spectroscopy results indicate that the PECVD grown a-Si films has higher intermediate-range order, which is enhanced for increased hydrogen dilution during deposition. With increasing intermediate-range order of the a-Si, the rate of AIC is diminished, leading larger poly-Si grain size.

  4. Silicon thin-film transistor backplanes on flexible substrates

    NASA Astrophysics Data System (ADS)

    Kattamis, Alexis Z.

    Flexible large area electronics, especially for displays, is a rapidly growing field. Since hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) have become the industry standard for liquid crystal displays, it makes sense that they be used in any transition from glass substrates to flexible substrates. The goal of this thesis work was to implement a-Si:H backplane technology on stainless steel and clear plastic substrates, with minimal recipe changes to ensure high device quality. When fabricating TFTs on flexible substrates many new issues arise, from thin-film fracture to overlay alignment errors. Our approach was to maintain elevated deposition temperatures (˜300°C) and engineer methods to minimize these problems, rather than reducing deposition temperatures. The resulting TFTs exhibit more stable operation than their low temperature counterparts and are therefore similar to the TFTs produced on glass. Two display projects using a-Si:H TFTs will be discussed in detail. They are an active-matrix organic light emitting display (AMOLED) on stainless steel and an active-matrix electrophoretic display (AMEPD) on clear plastic, with TFTs deposited at 250°C-280°C. Achieving quality a-Si:H TFTs on these substrates required addressing a host of technical challenges, including surface roughness and feature misalignment. Nanocrystalline silicon (nc-Si) was also implemented on a clear plastic substrate as a possible alternative to a-Si:H. nc-Si:H TFTs can be deposited using the same techniques as a-Si:H but yield carrier mobilities one order of magnitude greater. Their large mobilities could enable high resolution OLED displays and system-on-panel electronics.

  5. Raman spectroscopy of thin films

    NASA Astrophysics Data System (ADS)

    Burgess, James Shaw

    Raman spectroscopy was used in conjunction with x-ray diffraction and x-ray photoelectron spectroscopy to elucidate structural and compositional information on a variety of samples. Raman was used on the unique La 2NiMnO6 mixed double perovskite which is a member of the LaMnO3 family of perovskites and has multiferroic properties. Raman was also used on nanodiamond films as well as some boron-doped carbon compounds. Finally, Raman was used to identify metal-dendrimer bonds that have previously been overlooked. Vibrational modes for La2NiMnO6 were ascribed by comparing spectra with that for LaMnO3 bulk and thin film spectra. The two most prominent modes were labeled as an asymmetric stretch (A g) centered around 535 cm-1 and a symmetric stretch (B g) centered around 678 cm. The heteroepitaxial quality of La2NiMnO 6 films on SrTiO3 (100) and LaAlO3 (100) substrates were examined using the Raman microscope by way of depth profile experiments and by varying the thickness of the films. It was found that thin films (10 nm) had much greater strain on the LaAlO3 substrate than on the SrTiO3 substrate by examining the shifts of the Ag and the Bg modes from their bulk positions. Changes in the unit cell owing to the presence of oxygen defects were also monitored using Raman spectroscopy. It was found that the Ag and Bg modes shifted between samples formed with different oxygen partial pressures. These shifts could be correlated to changes in the symmetry of the manganese centers due to oxygen defects. Raman spectroscopy was used to examine the structural and compositional characteristics of carbon materials. Nanocrystalline diamond coated cutting tools were examined using the Raman Microscope. Impact, abrasion, and depth profile experiments indicated that delamination was the primary cause of film failure in these systems. Boron doped material of interest as catalyst supports were also examined. Monitoring of the G-mode and intensities of the D- and G-modes indicated that

  6. Electrostatic thin film chemical and biological sensor

    DOEpatents

    Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.; Viswanath, Dabir; Loyalka, Sudarshan K.

    2010-01-19

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  7. Thin films of mixed metal compounds

    DOEpatents

    Mickelsen, Reid A.; Chen, Wen S.

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  8. Applications of Thin Films in Electronics,

    DTIC Science & Technology

    The authors review the application of thin films produced by vacuum vaporization, cathode sputtering, diffusion, and epitaxial growing in the fields...of passive and active electric components and microminiaturization. Some of the most important characteristics of thin films are summarized. (Author)

  9. Application of Thin Films in Electronics,

    DTIC Science & Technology

    The article reviews the application of thin films (produced by vacuum evaporation, cathode sputtering, diffusion and epitaxial growing) in the field...of passive and active electric components and in microminiaturization. Some of the characteristics of thin films are summarized. (Author)

  10. Physics of thin films. Volume 13

    SciTech Connect

    Vossen, J.L.; Francombe, M.H.

    1987-01-01

    This volume of Physics of Thin Films contains five articles, four of which deal primarily with the influence of ions or of optical energy on the deposition, properties, or etching of thin films. The fifth article deals with the important technological problem of contacts to GaAs devices.

  11. Cellulose triacetate, thin film dielectric capacitor

    NASA Technical Reports Server (NTRS)

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1993-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  12. Cellulose triacetate, thin film dielectric capacitor

    NASA Technical Reports Server (NTRS)

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1995-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  13. Characteristics Of Vacuum Deposited Sucrose Thin Films

    NASA Astrophysics Data System (ADS)

    Ungureanu, F.; Predoi, D.; Ghita, R. V.; Vatasescu-Balcan, R. A.; Costache, M.

    Thin films of sucrose (C12H22O11) were deposited on thin cut glass substrates by thermal evaporation technique (p ~ 10-5 torr). The surface morphology was putted into evidence by FT-IR and SEM analysis. The experimental results confirm a uniform deposition of an adherent sucrose layer. The biological tests (e.g., cell morphology and cell viability evaluated by measuring mitochondrial dehydrogenise activity with MTT assay) confirm the properties of sucrose thin films as bioactive material. The human fetal osteoblast system grown on thin sucrose film was used for the determination of cell proliferation, cell viability and cell morphology studies.

  14. Magnetostrictive thin films for microwave spintronics

    PubMed Central

    Parkes, D. E.; Shelford, L. R.; Wadley, P.; Holý, V.; Wang, M.; Hindmarch, A. T.; van der Laan, G.; Campion, R. P.; Edmonds, K. W.; Cavill, S. A.; Rushforth, A. W.

    2013-01-01

    Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications. PMID:23860685

  15. A monolithic thin film electrochromic window

    SciTech Connect

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K.; Wei, G.; Yu, P.C.

    1991-12-31

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors` institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  16. A monolithic thin film electrochromic window

    SciTech Connect

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. . Electro-Optics Technology Center); Wei, G. ); Yu, P.C. )

    1991-01-01

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors' institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  17. Magnetostrictive thin films for microwave spintronics.

    PubMed

    Parkes, D E; Shelford, L R; Wadley, P; Holý, V; Wang, M; Hindmarch, A T; van der Laan, G; Campion, R P; Edmonds, K W; Cavill, S A; Rushforth, A W

    2013-01-01

    Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications.

  18. Preparation and Characterization of PZT Thin Films

    SciTech Connect

    Bose, A.; Sreemany, M.; Bhattacharyya, D. K.; Sen, Suchitra; Halder, S. K.

    2008-07-29

    In analogy with Piezoelectric Wafer Active Sensors (PWAS), Lead Zirconate Titanate (PZT) thin films also seem to be promising for Structural Health Monitoring (SHM) due to a number of reasons. Firstly, PZT thin films with well oriented domains show enhanced piezoelectric response. Secondly, PWAS requires comparatively large voltage leading to a demand for thin PZT films (<< {mu}m in thickness) for low voltage operation at {<=}10 V. This work focuses on two different aspects: (a) growing oriented PZT thin films in ferroelectric perovskite phase in the range of (80-150) nm thickness on epitaxial Si/Pt without a seed layer and (b) synthesizing perovskite phase in PZT thin films on Corning glass 1737 using a seed layer of TiO{sub x} (TiO{sub x} thickness ranging between 30 nm to 500 nm)

  19. Thin film bioreactors in space

    NASA Technical Reports Server (NTRS)

    Hughes-Fulford, M.; Scheld, H. W.

    1989-01-01

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization, and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers an opportunity to learn more about basic biological systems with one inmportant variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would make it possible to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  20. BDS thin film damage competition

    SciTech Connect

    Stolz, C J; Thomas, M D; Griffin, A J

    2008-10-24

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  1. Wrinkle motifs in thin films

    PubMed Central

    Budrikis, Zoe; Sellerio, Alessandro L.; Bertalan, Zsolt; Zapperi, Stefano

    2015-01-01

    On length scales from nanometres to metres, partial adhesion of thin films with substrates generates a fascinating variety of patterns, such as ‘telephone cord’ buckles, wrinkles, and labyrinth domains. Although these patterns are part of everyday experience and are important in industry, they are not completely understood. Here, we report simulation studies of a previously-overlooked phenomenon in which pairs of wrinkles form avoiding pairs, focusing on the case of graphene over patterned substrates. By nucleating and growing wrinkles in a controlled way, we characterize how their morphology is determined by stress fields in the sheet and friction with the substrate. Our simulations uncover the generic behaviour of avoiding wrinkle pairs that should be valid at all scales. PMID:25758174

  2. Thin film bioreactors in space

    NASA Technical Reports Server (NTRS)

    Hughes-Fulford, M.; Scheld, H. W.

    1989-01-01

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization, and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers an opportunity to learn more about basic biological systems with one inmportant variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would make it possible to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  3. Infrared radiation of thin plastic films.

    NASA Technical Reports Server (NTRS)

    Tien, C. L.; Chan, C. K.; Cunnington, G. R.

    1972-01-01

    A combined analytical and experimental study is presented for infrared radiation characteristics of thin plastic films with and without a metal substrate. On the basis of the thin-film analysis, a simple analytical technique is developed for determining band-averaged optical constants of thin plastic films from spectral normal transmittance data for two different film thicknesses. Specifically, the band-averaged optical constants of polyethylene terephthalate and polyimide were obtained from transmittance measurements of films with thicknesses in the range of 0.25 to 3 mil. The spectral normal reflectance and total normal emittance of the film side of singly aluminized films are calculated by use of optical constants; the results compare favorably with measured values.

  4. Infrared radiation of thin plastic films.

    NASA Technical Reports Server (NTRS)

    Tien, C. L.; Chan, C. K.; Cunnington, G. R.

    1972-01-01

    A combined analytical and experimental study is presented for infrared radiation characteristics of thin plastic films with and without a metal substrate. On the basis of the thin-film analysis, a simple analytical technique is developed for determining band-averaged optical constants of thin plastic films from spectral normal transmittance data for two different film thicknesses. Specifically, the band-averaged optical constants of polyethylene terephthalate and polyimide were obtained from transmittance measurements of films with thicknesses in the range of 0.25 to 3 mil. The spectral normal reflectance and total normal emittance of the film side of singly aluminized films are calculated by use of optical constants; the results compare favorably with measured values.

  5. Method of producing thin cellulose nitrate film

    DOEpatents

    Lupica, S.B.

    1975-12-23

    An improved method for forming a thin nitrocellulose film of reproducible thickness is described. The film is a cellulose nitrate film, 10 to 20 microns in thickness, cast from a solution of cellulose nitrate in tetrahydrofuran, said solution containing from 7 to 15 percent, by weight, of dioctyl phthalate, said cellulose nitrate having a nitrogen content of from 10 to 13 percent.

  6. Simple method for determination of the thickness of a nonabsorbing thin film using spectral reflectance measurement.

    PubMed

    Lunácek, Jiri; Hlubina, Petr; Lunácková, Milena

    2009-02-10

    A method to determine the thickness of a nonabsorbing thin film on an absorbing substrate is presented. A linear relation between the thin-film thickness and the tangent wavelength of the reflectance spectrum for a specific interference order is revealed, which permits the calculation of the thickness provided that the wavelength-dependent optical parameters of the thin film and the substrate are known. The thickness can be calculated precisely from the reflectance spectrum by using one extreme only, as is demonstrated theoretically for SiO(2) thin film on a Si substrate. The application of this method is demonstrated experimentally for the same thin-film structure but with different Si substrates. The results are compared with those given by the algebraic fitting method, and very good agreement is confirmed.

  7. Stability of thin liquid films

    SciTech Connect

    Bankoff, S.G.; Davis, S.H.

    1994-12-31

    Two topics are discussed in the present progress report. The first is a study of the stability of the interface between two thin immiscible fluid layers in a two-dimensional channel. The flowrates may be specified, or alternatively the total pressure drop and the flowrate of one fluid. The channel may be horizontal or inclined. A long-wave 3D nonlinear evolution equation is derived for the local layer thickness, whose coefficients are high-order polynomials of the viscosity ratio and the initial volume fraction. With a further restriction to small wave amplitude, as well as many slopes, a Kuramoto-Sivashinsky-type (KS) is derived. In countercurrent flow the {open_quotes}group velocity{close_quotes} of the interface can become very small, possibly signaling the onset of flooding. In this case a cubic nonlinearity becomes significant. The properties of this modified KS equation are explored in considerable detail. The classical Yih-Benjamin linear stability theory for long waves on an unforced thin liquid film down a vertical wall has never been experimentally verified, owing to the sensitivity to small random disturbances. However, by careful balancing and by operating under very quiet conditions, the theoretical predictions were verified for the first time. For pointwise measurements, 25-{mu}m resistivity probes were employed, and for global measurements fluorescent imaging.

  8. Low-temperature Amorphous and Nanocrystalline Silicon Materials and Thin-film Transistors

    NASA Astrophysics Data System (ADS)

    Sazonov, Andrei; Striakhilev, Denis; Nathan, Arokia

    Low-temperature processing and characterization of amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si) materials and devices are reviewed. An overview of silicon-based low-temperature thin-film dielectrics is given in the context of thin-film transistor (TFT) device operation. The low-temperature growth and synthesis of these materials are also presented and compared to conventionally fabricated high-temperature processed devices. The effect of using nc-Si contacts on a-Si:H TFTs and the stability of nc-Si TFTs is reviewed.

  9. Enhancement of optical absorption in silicon thin-film solar cells with metal nanoparticles

    NASA Astrophysics Data System (ADS)

    Shi, Bo; Wang, Wei; Yu, Xueqing; Yang, Lili; Xu, Yuanpei

    2017-05-01

    Light trapping structures are a promising method of improving the efficiency of solar cells. We focused on the plasmonic thin-film solar cell. A structure is proposed consisting of an indium tin oxide layer with embedded metal nanoparticles, a hydrogenated amorphous silicon (a-Si:H) layer, and an aluminum (Al) layer. The finite-difference-time-domain (FDTD) method was used to calculate the absorption characteristics of the a-Si:H thin-film solar cells containing nanoparticles. By arranging the material, size, and locations of metal nanoparticles to maximize the scattering and minimize absorption of nanoparticles themselves, the optical absorption in the solar cell is significantly enhanced.

  10. Thin film ruthenium microstructures for transition edge sensors

    NASA Astrophysics Data System (ADS)

    Ilin, A. S.; Cohn, I. A.; Vystavkin, A. N.; Kovalenko, A. G.

    2016-12-01

    The superconducting properties of ruthenium (Ru) thin films and microstructures are investigated. The microstructures are used as transition edge sensors (TES), working at He-3 evaporation cryostats' temperatures. Ruthenium is substantially inert, and the critical temperature Tc for bulk Ru samples is known from state of art to be 0.40-0.51 K. We investigated magnetron sputtered Ru thin films with thicknesses 13-300 nm on a Si substrate and electron lithography fabricated TES samples, based on the thin-film Ru microstructures. It has been found, that the Tc for the Ru thin films is 0.55-0.70 K, and the width of the transition region is 1-5 mK, and for the Ru TES Tc = 0.55 and ΔT = 4 mK. Furthermore, it was established that lithography process had no significant influence on the properties of the TES samples, so we were able to get consistent properties for several fabrication sessions. Therefore ruthenium is concluded to be a desirable material for transition edge sensors working at He-3 cryostats' temperatures.

  11. VUV thin films, chapter 7

    NASA Technical Reports Server (NTRS)

    Zukic, Muamer; Torr, Douglas G.

    1993-01-01

    The application of thin film technology to the vacuum ultraviolet (VUV) wavelength region from 120 nm to 230 nm has not been fully exploited in the past because of absorption effects which complicate the accurate determination of the optical functions of dielectric materials. The problem therefore reduces to that of determining the real and imaginary parts of a complex optical function, namely the frequency dependent refractive index n and extinction coefficient k. We discuss techniques for the inverse retrieval of n and k for dielectric materials at VUV wavelengths from measurements of their reflectance and transmittance. Suitable substrate and film materials are identified for application in the VUV. Such applications include coatings for the fabrication of narrow and broadband filters and beamsplitters. The availability of such devices open the VUV regime to high resolution photometry, interferometry and polarimetry both for space based and laboratory applications. This chapter deals with the optics of absorbing multilayers, the determination of the optical functions for several useful materials, and the design of VUV multilayer stacks as applied to the design of narrow and broadband reflection and transmission filters and beamsplitters. Experimental techniques are discussed briefly, and several examples of the optical functions derived for selected materials are presented.

  12. Micromotors using magnetostrictive thin films

    NASA Astrophysics Data System (ADS)

    Claeyssen, Frank; Le Letty, Ronan; Barillot, Francois; Betz, Jochen; MacKay, Ken; Givord, Dominique; Bouchilloux, Philippe

    1998-07-01

    This study deals with a micromotor based on the use of magnetostrictive thin films. This motor belongs to the category of the Standing Wave Ultrasonic Motors. The active part of the motor is the rotor, which is a 100 micrometers thick ring vibrating in a flexural mode. Teeth (300 micrometers high) are placed on special positions of the rotor and produce an oblique motion which can induce the relative motion of any object in contact with them. The magnetic excitation field is radial and uses the transverse coupling of the 4 micrometers thick magnetostrictive film. The film, deposited by sputtering on the ring, consists of layers of different rare-earth/iron alloys and was developed during a European Brite-Euram project. The finite element technique was used in order to design a prototype of the motor and to optimize the active rotor and the energizer coil. The prototype we built delivered a speed of 30 turns per minute with a torque of 2 (mu) N.m (without prestress applied on the rotor). Our experimental results show that the performance of this motor could easily be increased by a factor of 5. The main advantage of this motor is the fact that it is remotely powered and controlled. The excitation coil, which provides both power and control, can be placed away from the active rotor. Moreover, the rotor is completely wireless and is not connected to its support or to any other part. It is interesting to note that it would not be possible to build this type of motor using piezoelectric technology. Medical applications of magnetostrictive micromotors could be found for internal microdistributors of medication (the coil staying outside the body). Other applications include remote control micropositioning, micropositioning of optical components, and for the actuation of systems such as valves, electrical switches, and relays.

  13. Inverse bilayer magnetoelectric thin film sensor

    SciTech Connect

    Yarar, E.; Piorra, A.; Quandt, E.; Salzer, S.; Höft, M.; Knöchel, R.; Hrkac, V.; Kienle, L.

    2016-07-11

    Prior investigations on magnetoelectric (ME) thin film sensors using amorphous FeCoSiB as a magnetostrictive layer and AlN as a piezoelectric layer revealed a limit of detection (LOD) in the range of a few pT/Hz{sup 1/2} in the mechanical resonance. These sensors are comprised of a Si/SiO{sub 2}/Pt/AlN/FeCoSiB layer stack, as dictated by the temperatures required for the deposition of the layers. A low temperature deposition route of very high quality AlN allows the reversal of the deposition sequence, thus allowing the amorphous FeCoSiB to be deposited on the very smooth Si substrate. As a consequence, the LOD could be enhanced by almost an order of magnitude reaching 400 fT/Hz{sup 1/2} at the mechanical resonance of the sensor. Giant ME coefficients (α{sub ME}) as high as 5 kV/cm Oe were measured. Transmission electron microscopy investigations revealed highly c-axis oriented growth of the AlN starting from the Pt-AlN interface with local epitaxy.

  14. Intermediate crystalline states produced by isothermal annealing of sputter-deposited a-Si films

    NASA Astrophysics Data System (ADS)

    Akazawa, Housei

    2005-02-01

    The crystalline states produced by isothermally annealing sputter-deposited hydrogen-free amorphous-Si (a-Si) films greatly differ from those of a-Si :H films. Strained network and numerous vacancies in the a-Si film are indicated by the ⟨ɛ2⟩ spectrum. Annealing the sample at temperatures between 300 and 550°C relaxes the strained network due to local exchanges of Si-Si bond while maintaining the amorphous state. Self-assembly of hemispherical grains of microcrystalline Si on the film surface occurs during the onset of crystallization (600°C ). At a slightly elevated temperature of 690°C, the cohesion of Si atoms in the film creates nanocrystalline Si (2-nm diameter), which directly corresponds to the emergence of the absorption peak feature below 3eV in the ⟨ɛ2⟩ spectrum. Dense voids at the interfacial region severely limit the range of solid phase epitaxy, thus facilitating preferential nucleation in the film.

  15. Flexible thin metal film thermal sensing system

    NASA Technical Reports Server (NTRS)

    Thomsen, Donald L. (Inventor)

    2010-01-01

    A flexible thin metal film thermal sensing system is provided. A self-metallized polymeric film has a polymeric film region and a metal surface disposed thereon. A layer of electrically-conductive metal is deposited directly onto the self-metallized polymeric film's metal surface. Coupled to at least one of the metal surface and the layer of electrically-conductive metal is a device/system for measuring an electrical characteristic associated therewith as an indication of temperature.

  16. Thin-film rechargeable lithium batteries

    SciTech Connect

    Dudney, N.J.; Bates, J.B.; Lubben, D.

    1994-11-01

    Small thin-film rechargeable cells have been fabricated with a lithium phosphorus oxyniuide electrolyte, Li metal anode, and Li{sub 1-x}Mn{sub 2}O{sub 4} as the cathode film. The cathode films were fabricated by several different techniques resulting in both crystalline and amorphous films. These were compared by observing the cell discharge behavior. Estimates have been made for the scale-up of such a thin-film battery to meet the specifications for the electric vehicle application. The specific energy, energy density, and cycle life are expected to meet the USABC mid-term criteria. However, the areas of the thin-films needed to fabricate such a cell are very large. The required areas could be greatly reduced by operating the battery at temperatures near 100{degrees}C or by enhancing the lithium ion transport rate in the cathode material.

  17. Macro stress mapping on thin film buckling

    SciTech Connect

    Goudeau, P.; Villain, P.; Renault, P.-O.; Tamura, N.; Celestre, R.S.; Padmore, H.A.

    2002-11-06

    Thin films deposited by Physical Vapour Deposition techniques on substrates generally exhibit large residual stresses which may be responsible of thin film buckling in the case of compressive stresses. Since the 80's, a lot of theoretical work has been done to develop mechanical models but only a few experimental work has been done on this subject to support these theoretical approaches and nothing concerning local stress measurement mainly because of the small dimension of the buckling (few 10th mm). This paper deals with the application of micro beam X-ray diffraction available on synchrotron radiation sources for stress mapping analysis of gold thin film buckling.

  18. Thin film evaporator recovers used oil

    SciTech Connect

    Booth, G. III

    1983-01-01

    This article is an evaluation of a thin film evaporator which is used to distill the lube oil fraction from depleted additives and other residues in the crankcase oil re-refining process at Booth Oil. Operating as a vacuum distillation unit, the thin film evaporator produces a lube oil base stock equivalent in quality, after post-treatment, to virgin base stock. The thin film evaporator recovers about 70 to 90% of used oil as lube oil distillate, depending on the quantity of non-volatile residue in the feed.

  19. Surface roughness evolution of nanocomposite thin films

    SciTech Connect

    Turkin, A. A.; Pei, Y. T.; Shaha, K. P.; Chen, C. Q.; Vainshtein, D. I.; Hosson, J. Th. M. de

    2009-01-01

    An analysis of dynamic roughening and smoothening mechanisms of thin films grown with pulsed-dc magnetron sputtering is presented. The roughness evolution has been described by a linear stochastic equation, which contains the second- and fourth-order gradient terms. Dynamic smoothening of the growing interface is explained by ballistic effects resulting from impingements of ions to the growing thin film. These ballistic effects are sensitive to the flux and energy of impinging ions. The predictions of the model are compared with experimental data, and it is concluded that the thin film roughness can be further controlled by adjusting waveform, frequency, and width of dc pulses.

  20. Density inhomogeneity in ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Cao, Jiang-Li; Solbach, Axel; Klemradt, Uwe; Weirich, Thomas; Mayer, Joachim; Böttger, Ulrich; Schorn, Peter J.; Waser, Rainer

    2006-07-01

    Structural investigations of Pb(Zr ,Ti)O3 (PZT) ferroelectric thin films derived by chemical solution deposition on Pt /TiOx electrode stacks were performed using grazing incidence x-ray specular reflectivity of synchrotron radiation and transmission electron microscopy. A density inhomogeneity, i.e., a sublayer structure, in the PZT thin films was observed; the upper PZT sublayer had a lower density and the lower sublayer had a higher density. The influence of the density inhomogeneity, as a possible extrinsic contribution to size effects in ferroelectric thin films, was discussed.

  1. Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint

    SciTech Connect

    Ullal, H. S.; von Roedern, B.

    2007-09-01

    We report here on the major commercialization aspects of thin-film photovoltaic (PV) technologies based on CIGS and CdTe (a-Si and thin-Si are also reported for completeness on the status of thin-film PV). Worldwide silicon (Si) based PV technologies continues to dominate at more than 94% of the market share, with the share of thin-film PV at less than 6%. However, the market share for thin-film PV in the United States continues to grow rapidly over the past several years and in CY 2006, they had a substantial contribution of about 44%, compared to less than 10% in CY 2003. In CY 2007, thin-film PV market share is expected to surpass that of Si technology in the United States. Worldwide estimated projections for CY 2010 are that thin-film PV production capacity will be more than 3700 MW. A 40-MW thin-film CdTe solar field is currently being installed in Saxony, Germany, and will be completed in early CY 2009. The total project cost is Euro 130 million, which equates to an installed PV system price of Euro 3.25/-watt averaged over the entire solar project. This is the lowest price for any installed PV system in the world today. Critical research, development, and technology issues for thin-film CIGS and CdTe are also elucidated in this paper.

  2. Research on Advanced Thin Film Batteries

    SciTech Connect

    Goldner, Ronald B.

    2003-11-24

    During the past 7 years, the Tufts group has been carrying out research on advanced thin film batteries composed of a thin film LiCo02 cathode (positive electrode), a thin film LiPON (lithium phosphorous oxynitride) solid electrolyte, and a thin film graphitic carbon anode (negative electrode), under grant DE FG02-95ER14578. Prior to 1997, the research had been using an rfsputter deposition process for LiCoOi and LiPON and an electron beam evaporation or a controlled anode arc evaporation method for depositing the carbon layer. The pre-1997 work led to the deposition of a single layer cell that was successfully cycled for more than 400 times [1,2] and the research also led to the deposition of a monolithic double-cell 7 volt battery that was cycled for more than 15 times [3]. Since 1997, the research has been concerned primarily with developing a research-worthy and, possibly, a production-worthy, thin film deposition process, termed IBAD (ion beam assisted deposition) for depositing each ofthe electrodes and the electrolyte of a completely inorganic solid thin film battery. The main focus has been on depositing three materials - graphitic carbon as the negative electrode (anode), lithium cobalt oxide (nominally LiCoCb) as the positive electrode (cathode), and lithium phosphorus oxynitride (LiPON) as the electrolyte. Since 1998, carbon, LiCoOa, and LiPON films have been deposited using the IBAD process with the following results.

  3. Performance Characterization of Monolithic Thin Film Resistors

    NASA Astrophysics Data System (ADS)

    Yin, Rong

    Thin film resistors have a large resistance range and stable performance under high temperature operating condition. Thin film resistors trimmed by laser beam are able to achieve very high precision on resistance value. As a result, thin film resistors have been widely used to improve the performance of integrated circuits such as operational amplifier, analog-to-digital (A/D) and digital -to-analog (D/A) converters, etc. In this dissertation, a new class of thin film resistors, silicon chrome (SiCr) thin film resistors, has been investigated at length. From thin film characterization to aging behavior modelling, we have carried out a series of engineering activities. The characteristics of the SiCr thin film incorporated into three bipolar processes were first determined. After laser trimming, we have measured a couple of physical parameters of the SiCr film in the heat affected zone (HAZ). This is the first time the sheet resistance and the temperature coefficient of resistance (TCR) of thin film in the HAZ have been characterized. Both thermal and d.c. load accelerated aging tests were performed. The test structures were subjected to the aging for 1000 hours. Based on the test data, we not only evaluated the classical thermal aging model for untrimmed thin film resistors, but also established several empirical thermal aging models for trimmed resistors and d.c. load aging models for both trimmed and untrimmed thin film resistors. All the experiments were carried out for both conventional bar resistors and our new Swiss Cheese (SC) resistors. For the first time, the performance of laser trimmed SC resistors, which was experimentally evaluated, shown a clear superiority over that of trimmed bar resistors. Besides these experiments, we have examined different die attach techniques and their effects on thin film resistors. Also, we have developed a number of hardware systems and software tools, such as a temperature controller, d.c. current source, temperature

  4. Thin film polycrystalline silicon: Promise and problems in displays and solar cells

    SciTech Connect

    Fonash, S.J.

    1995-08-01

    Thin film polycrystalline Si (poly-Si) with its carrier mobilities, potentially good stability, low intragrain defect density, compatibility with silicon processing, and ease of doping activation is an interesting material for {open_quotes}macroelectronics{close_quotes} applications such as TFTs for displays and solar cells. The poly-Si films needed for these applications can be ultra-thin-in the 500{Angstrom} to 1000{Angstrom} thickness range for flat panel display TFTs and in the 4{mu}m to 10{mu}m thickness range for solar cells. Because the films needed for these microelectronics applications can be so thin, an effective approach to producing the films is that of crystallizing a-Si precursor material. Unlike cast materials, poly-Si films made this way can be produced using low temperature processing. Unlike deposited poly-Si films, these crystallized poly-Si films can have grain widths that are much larger than the film thickness and almost atomically smooth surfaces. This thin film poly-Si crystallized from a-Si precursor films, and its promise and problems for TFTs and solar cells, is the focus of this discussion.

  5. Permanent laser conditioning of thin film optical materials

    DOEpatents

    Wolfe, C.R.; Kozlowski, M.R.; Campbell, J.H.; Staggs, M.; Rainer, F.

    1995-12-05

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold. 9 figs.

  6. Permanent laser conditioning of thin film optical materials

    DOEpatents

    Wolfe, C. Robert; Kozlowski, Mark R.; Campbell, John H.; Staggs, Michael; Rainer, Frank

    1995-01-01

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold.

  7. Thin Films in the Technology of Superhigh Frequencies.

    DTIC Science & Technology

    A comprehensive discussion of the physics, manufacturing processes and applications of thin films in modern communications technology. The following...subjects are discussed in detail: (1) Structure and properties of thin films : vacuum vaporization, cathode sputtering, thin film structure and...physical properties. (2) Thin films as SHF load resistors: peculiarities of SHF resistors, material selection, behavior in an SHF field, cylindrical disc

  8. Ferromagnetic properties of fcc Gd thin films

    SciTech Connect

    Bertelli, T. P. Passamani, E. C.; Larica, C.; Nascimento, V. P.; Takeuchi, A. Y.

    2015-05-28

    Magnetic properties of sputtered Gd thin films grown on Si (100) substrates kept at two different temperatures were investigated using X-ray diffraction, ac magnetic susceptibility, and dc magnetization measurements. The obtained Gd thin films have a mixture of hcp and fcc structures, but with their fractions depending on the substrate temperature T{sub S} and film thickness x. Gd fcc samples were obtained when T{sub S} = 763 K and x = 10 nm, while the hcp structure was stabilized for lower T{sub S} (300 K) and thicker film (20 nm). The fcc structure is formed on the Ta buffer layer, while the hcp phase grows on the fcc Gd layer as a consequence of the lattice relaxation process. Spin reorientation phenomenon, commonly found in bulk Gd species, was also observed in the hcp Gd thin film. This phenomenon is assumed to cause the magnetization anomalous increase observed below 50 K in stressed Gd films. Magnetic properties of fcc Gd thin films are: Curie temperature above 300 K, saturation magnetization value of about 175 emu/cm{sup 3}, and coercive field of about 100 Oe at 300 K; features that allow us to classify Gd thin films, with fcc structure, as a soft ferromagnetic material.

  9. Near-field spectroscopy of silicon dioxide thin films

    NASA Astrophysics Data System (ADS)

    Zhang, L. M.; Andreev, G. O.; Fei, Z.; McLeod, A. S.; Dominguez, G.; Thiemens, M.; Castro-Neto, A. H.; Basov, D. N.; Fogler, M. M.

    2012-02-01

    We analyze the results of scanning near-field infrared spectroscopy performed on thin films of a-SiO2 on Si substrate. The measured near-field signal exhibits surface-phonon resonances whose strength has a prominent thickness dependence in the range from 2 to 300nm. These observations are compared with calculations in which the tip of the near-field infrared spectrometer is modeled either as a point dipole or an elongated spheroid. The latter model accounts for the antenna effect of the tip and gives a better agreement with the experiment. Possible applications of the near-field technique for depth profiling of layered nanostructures are discussed.

  10. Electrical and optical properties of hydrogenated amorphous silicon-germanium (a-Si1 - xGexH) films prepared by reactive ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Bhan, Mohan Krishan; Malhotra, L. K.; Kashyap, Subhash C.

    1989-09-01

    Thin films of hydrogenated amorphous silicon-germanium (a-Si1-xGex: H) alloys have been prepared by reactive ion beam sputtering of a composite target of silicon and germanium. The dependence of the deposition rate, conductivity-temperature variation, optical absorption coefficient, refractive index, imaginary part of the dielectric constant, hydrogen content, and infrared (IR) absorption spectra on germanium content (x) are reported and analyzed. For a typical composition—a-Si28Ge72:H (x=0.72), the effect of beam voltage, H2:Ar flow ratio, and substrate temperature on the material properties have also been investigated. For the films prepared with increasing x, the expected behavior of a decrease in both hydrogen content and band gap and an increase in the electrical conductivity have been observed. The films prepared at x>0.80 are found to be more homogeneous than the films deposited at 0.0a-Si1-xGex: H network in the latter case. The a-Si28Ge72:H films exhibiting minimum conductivity (1.7×10-7 Ω-1 cm-1) have been obtained for an H2:Ar flow ratio of 10:1 and a beam voltage and substrate temperature of 1500 V and 300 °C, respectively. These films contain a hydrogen concentration of 10.2 at. % and show an optical band gap of 1.25 eV. The IR studies have shown that a-Si28Ge72:H films prepared both at low beam voltages and at low substrate temperatures show the unusual preferential attachment of hydrogen to Ge rather than to Si.

  11. Highly stretchable wrinkled gold thin film wires

    PubMed Central

    Kim, Joshua; Park, Sun-Jun; Nguyen, Thao; Chu, Michael; Pegan, Jonathan D.; Khine, Michelle

    2016-01-01

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications. PMID:26937042

  12. Thin film production method and apparatus

    DOEpatents

    Loutfy, Raouf O.; Moravsky, Alexander P.; Hassen, Charles N.

    2010-08-10

    A method for forming a thin film material which comprises depositing solid particles from a flowing suspension or aerosol onto a filter and next adhering the solid particles to a second substrate using an adhesive.

  13. Thermally tunable ferroelectric thin film photonic crystals.

    SciTech Connect

    Lin, P. T.; Wessels, B. W.; Imre, A.; Ocola, L. E.; Northwestern Univ.

    2008-01-01

    Thermally tunable PhCs are fabricated from ferroelectric thin films. Photonic band structure and temperature dependent diffraction are calculated by FDTD. 50% intensity modulation is demonstrated experimentally. This device has potential in active ultra-compact optical circuits.

  14. Electrical Properties of Thin Films of Alumina.

    DTIC Science & Technology

    The report consists of a literature survey on the electrical properties of alumina and aluminum oxide thin films . A bibliographic listing of reports is included along with abstracts from most of them.

  15. Thin films for geothermal sensing: Final report

    SciTech Connect

    Not Available

    1987-09-01

    The report discusses progress in three components of the geothermal measurement problem: (1) developing appropriate chemically sensitive thin films; (2) discovering suitably rugged and effective encapsulation schemes; and (3) conducting high temperature, in-situ electrochemical measurements. (ACR)

  16. Highly stretchable wrinkled gold thin film wires

    NASA Astrophysics Data System (ADS)

    Kim, Joshua; Park, Sun-Jun; Nguyen, Thao; Chu, Michael; Pegan, Jonathan D.; Khine, Michelle

    2016-02-01

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  17. Highly stretchable wrinkled gold thin film wires

    SciTech Connect

    Kim, Joshua Park, Sun-Jun; Nguyen, Thao; Chu, Michael; Pegan, Jonathan D.; Khine, Michelle

    2016-02-08

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  18. Optical characterization of hydrogenated silicon thin films using interference technique

    NASA Astrophysics Data System (ADS)

    Globus, Tatiana; Ganguly, Gautam; Roca i Cabarrocas, Pere

    2000-08-01

    This work introduces an application of an "interference spectroscopy technique" (IST) for determination of absorption coefficient and refractive index spectra of amorphous silicon (a-Si:H) and related thin film materials. The technique is based on computer analysis of measurements of optical transmission and specular reflection (T & R) of thin films (including the films on substrates) over a wide range of the incident photon energies (0.5-2.8 eV) using carefully controlled spectrometer conditions. IST is used to investigate the absorption spectrum in the sub-gap energy range (0.8-1.6 eV) of intrinsic and phosphorous-doped a-Si:H, "polymorphous-Si:H," and microcrystalline silicon films. The enhanced sensitivity of the technique over conventional analysis of T & R data results from utilization of interference to obtain absorption coefficient values at the maxima of transmission. The factors limiting the accuracy of the calculated absorption coefficient are discussed in detail. Measurement on films of thickness ranging from 0.1 to 5 μm identifies that the sub-gap absorption in these films arises from the bulk rather than the surface. A set of samples prepared under widely different conditions that appear to have overlapping (α=20 cm-1) sub-gap absorption spectra measured using photo-thermal deflection spectroscopy (PDS), reveal significant differences (α=10 to 100 cm-1) using IST. Changes (factor of 2) in sub-gap absorption spectra due to light soaking are also clearly observable using IST.

  19. Thin-film reliability and engineering overview

    NASA Technical Reports Server (NTRS)

    Ross, R. G., Jr.

    1984-01-01

    The reliability and engineering technology base required for thin film solar energy conversions modules is discussed. The emphasis is on the integration of amorphous silicon cells into power modules. The effort is being coordinated with SERI's thin film cell research activities as part of DOE's Amorphous Silicon Program. Program concentration is on temperature humidity reliability research, glass breaking strength research, point defect system analysis, hot spot heating assessment, and electrical measurements technology.

  20. Intelligent Processing of Ferroelectric Thin Films

    DTIC Science & Technology

    1994-05-31

    and in-situ ellipsometry in one chamber. Results from the automatic spinner were compared with those of the bulk ceramics. In general, thin films on Ag ...coated thin films on Ag foil substrates and hot pressed bulk ceramics were fabricated and compared with respect to electrical and electrooptic...methanol at a 2:1 ratio by weight. The solution was spun onto Ag foil for comparison with bulk ceramics using a photoresist spinner at 2000 rpm for 15

  1. Thin-film microelectronic wearable body sensors.

    PubMed

    Neuman, Michael R

    2015-01-01

    This review of various applications of well-established thin-film processing techniques to wearable body sensors gives examples of work done in the author's laboratory over many years. Sensors for the vital signs of body temperature, electrocardiogram, heart rate, breathing pattern and breathing rate are presented along with other applications. Thin-film based sensors have the advantage of small size, high surface area to mass ratio, flexibility, capability for batch production, and compatibility with other microelectronic technologies.

  2. Surface, interface and thin-film magnetism

    SciTech Connect

    Falicov, L.M. California Univ., Berkeley, CA . Dept. of Physics)

    1991-07-01

    In the last quarter of the 20th century, with the information revolution and the ever growing need to acquire, store, and retrieve information, the science and technologies attached to magnetic recording have experienced an explosive growth. Central to those pursuits has been the materials science of magnetism as it applies to surfaces, interfaces, and thin films. This report discusses topics on thin-film magnetism such as: theory, physical effects, prospects, opportunities and future developments. (JL)

  3. Multilayer Thin Film Sensors for Damage Diagnostics

    NASA Astrophysics Data System (ADS)

    Protasov, A. G.; Gordienko, Y. G.; Zasimchuk, E. E.

    2006-03-01

    The new innovative approach to damage diagnostics within the production and maintenance/servicing procedures in industry is proposed. It is based on the real-time multiscale monitoring of the smart-designed multilayer thin film sensors of fatigue damage with the standard electrical input/output interfaces which can be connected to the embedded and on-board computers. The multilayer thin film sensors supply information about the actual unpredictable deformation damage, actual fatigue life, strain localization places, damage spreading, etc.

  4. Thin wetting film lensless imaging

    NASA Astrophysics Data System (ADS)

    Allier, C. P.; Poher, V.; Coutard, J. G.; Hiernard, G.; Dinten, J. M.

    2011-03-01

    Lensless imaging has recently attracted a lot of attention as a compact, easy-to-use method to image or detect biological objects like cells, but failed at detecting micron size objects like bacteria that often do not scatter enough light. In order to detect single bacterium, we have developed a method based on a thin wetting film that produces a micro-lens effect. Compared with previously reported results, a large improvement in signal to noise ratio is obtained due to the presence of a micro-lens on top of each bacterium. In these conditions, standard CMOS sensors are able to detect single bacterium, e.g. E.coli, Bacillus subtilis and Bacillus thuringiensis, with a large signal to noise ratio. This paper presents our sensor optimization to enhance the SNR; improve the detection of sub-micron objects; and increase the imaging FOV, from 4.3 mm2 to 12 mm2 to 24 mm2, which allows the detection of bacteria contained in 0.5μl to 4μl to 10μl, respectively.

  5. Printable CIGS thin film solar cells

    NASA Astrophysics Data System (ADS)

    Fan, Xiaojuan

    2013-03-01

    Among the various thin film solar cells in the market, CuInGaSe thin film solar cells have been considered as the most promising alternatives to crystalline silicon solar cells because of their high photo-electricity conversion efficiency, reliability, and stability. However, many fabrication methods of CIGS thin film are based on vacuum processes such as evaporation and sputtering techniques which are not cost efficient. This work develops a solution method using paste or ink liquid spin-coated on glass that would be competitive to conventional ways in terms of cost effective, non-vacuum needed, and quick processing. A mixture precursor was prepared by dissolving appropriate amounts of composition chemicals. After the mixture solution was cooled, a viscous paste was prepared and ready for spin-coating process. A slight bluish CIG thin film on substrate was then put in a tube furnace with evaporation of metal Se followed by depositing CdS layer and ZnO nanoparticle thin film coating to complete a solar cell fabrication. Structure, absorption spectrum, and photo-electricity conversion efficiency for the as-grown CIGS thin film solar cell are under study.

  6. Printable CIGS thin film solar cells

    NASA Astrophysics Data System (ADS)

    Fan, Xiaojuan

    2014-03-01

    Among the various thin film solar cells in the market, CuInGaSe thin film cells have been considered as the most promising alternatives to silicon solar cells because of their high photo-electricity efficiency, reliability, and stability. However, many fabrication of CIGS thin film are based on vacuum processes such as evaporation sputtering techniques which are not cost efficient. This work develops a method using paste or ink liquid spin-coated on glass that would be to conventional ways in terms of cost effective, non-vacuum needed, quick processing. A mixture precursor was prepared by dissolving appropriate amounts of chemicals. After the mixture solution was cooled, a viscous paste prepared and ready for spin-coating process. A slight bluish CIG thin film substrate was then put in a tube furnace with evaporation of metal Se by depositing CdS layer and ZnO nanoparticle thin film coating to a solar cell fabrication. Structure, absorption spectrum, and photo-conversion efficiency for the as-grown CIGS thin film solar cell under study.

  7. Carbon Nanotube Thin-Film Antennas.

    PubMed

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

    2016-08-17

    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of <10 ohm/sq is needed to achieve a 10 dB return loss in the unbalanced antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

  8. Characterization of Field Exposed Thin Film Modules: Preprint

    SciTech Connect

    Wohlgemuth, J. H.; Sastry, O. S.; Stokes, A.; Singh, Y. K.; Kumar, M.

    2012-06-01

    Test arrays of thin film modules have been deployed at the Solar Energy Centre near New Delhi, India since 2002-2003. Performances of these arrays were reported by O.S. Sastry [1]. This paper reports on NREL efforts to support SEC by performing detailed characterization of selected modules from the array. Modules were selected to demonstrate both average and worst case power loss over the 8 years of outdoor exposure. The modules characterized included CdTe, CIS and three different types of a-Si. All but one of the a-Si types were glass-glass construction. None of the modules had edge seals. Detailed results of these tests are presented along with our conclusions about the causes of the power loss for each technology.

  9. Ultra-high current density thin-film Si diode

    DOEpatents

    Wang, Qi [Littleton, CO

    2008-04-22

    A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

  10. Thin-film module circuit design: Practical and reliability aspects

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.; Twesme, E. N.

    1985-01-01

    This paper will address several aspects of the design and construction of submodules based on thin film amorphous silicon (a-Si) p i n solar cells. Starting from presently attainable single cell characteristics, and a realistic set of specifications, practical module designs are discussed from the viewpoints of efficient designs, the fabrication requirements, and reliability concerns. The examples center mostly on series interconnected modules of the superstrate type with detailed discussions of each portion of the structure in relation to its influence on module efficiency. Emphasis is placed on engineering topics such as: area coverage, optimal geometries, and cost and reliability. Practical constraints on achieving optimal designs, along with some examples of potential pitfalls in the manufacture and subsequent performance of a-Si modules are discussed.

  11. Ultra-high current density thin-film Si diode

    DOEpatents

    Wang; Qi

    2008-04-22

    A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

  12. Photophysical properties of Alq3 thin films

    NASA Astrophysics Data System (ADS)

    Zawadzka, A.; Płóciennik, P.; Strzelecki, J.; Łukasiak, Z.; Sahraoui, B.

    2013-11-01

    This work contains investigation results of the photophysical properties of aluminum (III) tris(8-hydroxyquinoline) thin films. The Alq3 thin films were successfully fabricated by Physical Vapor Deposition technique. The films were grown on transparent: (quartz and glass) and semiconductor (n-type silica) substrates kept at room temperature during the deposition process. Selected films were annealed after fabrication in ambient atmosphere for 12 h at the temperature equal to 100 °C and 150 °C. Morphology of the films was investigated by AFM technique. Photophysical properties were characterized via photoluminescence, transmission, second and third harmonic generation measurements. The thin films exhibit high structural quality regardless of the annealing process, but the stability of the film can be improved by using an appropriate temperature during the annealing process. Photoluminescence of Alq3 films obtained in air were efficient and stable. The measurements of transmission, SHG and THG spectra allowed us to determine optical constant of the films. We find that the photophysical properties were strictly connected with the morphology and the annealing process significantly changes the structural properties of the films.

  13. Thin-Film Nanocapacitor and Its Characterization

    ERIC Educational Resources Information Center

    Hunter, David N.; Pickering, Shawn L.; Jia, Dongdong

    2007-01-01

    An undergraduate thin-film nanotechnology laboratory was designed. Nanocapacitors were fabricated on silicon substrates by sputter deposition. A mask was designed to form the shape of the capacitor and its electrodes. Thin metal layers of Au with a 80 nm thickness were deposited and used as two infinitely large parallel plates for a capacitor.…

  14. Thin-Film Nanocapacitor and Its Characterization

    ERIC Educational Resources Information Center

    Hunter, David N.; Pickering, Shawn L.; Jia, Dongdong

    2007-01-01

    An undergraduate thin-film nanotechnology laboratory was designed. Nanocapacitors were fabricated on silicon substrates by sputter deposition. A mask was designed to form the shape of the capacitor and its electrodes. Thin metal layers of Au with a 80 nm thickness were deposited and used as two infinitely large parallel plates for a capacitor.…

  15. Liquid phase deposition of electrochromic thin films

    SciTech Connect

    Richardson, Thomas J.; Rubin, Michael D.

    2000-08-18

    Thin films of titanium, zirconium and nickel oxides were deposited on conductive SnO2:F glass substrates by immersion in aqueous solutions. The films are transparent, conformal, of uniform thickness and appearance, and adhere strongly to the substrates. On electrochemical cycling, TiO2, mixed TiO2-ZrO2, and NiOx films exhibited stable electrochromism with high coloration efficiencies. These nickel oxide films were particularly stable compared with films prepared by other non-vacuum techniques. The method is simple, inexpensive, energy efficient, and readily scalable to larger substrates.

  16. Experimental analysis of silicon oxycarbide thin films and waveguides

    NASA Astrophysics Data System (ADS)

    Memon, Faisal Ahmed; Morichetti, Francesco; Somaschini, Claudio; Iseni, Giosue; Melloni, Andrea

    2017-05-01

    Silicon oxycarbide (SiOC) thin films are produced with reactive rf magnetron sputtering of a silicon carbide (SiC) target on Si (100) and SiO2/Si substrates under varying deposition conditions. The optical properties of the deposited SiOC thin films are characterized with spectroscopic ellispometry at multiple angles of incidence over a wavelength range 300- 1600 nm. The derived optical constants of the SiOC films are modeled with Tauc-Lorentz model. The refractive index n of the SiOC films range from 1.45 to 1.85 @ 1550 nm and the extinction coefficient k is estimated to be less than 10-4 in the near-infrared region above 1000 nm. The topography of SiOC films is studied with SEM and AFM giving rms roughness of 0.9 nm. Channel waveguides with a SiOC core with a refractive index of 1.7 have been fabricated to demonstrate the potential of sputtered SiOC for integrated photonics applications. Propagation loss as low as 0.39 +/- 0.05 dB/mm for TE and 0.41 +/- 0.05 dB/mm for TM polarizations at telecommunication wavelength 1550 nm is demonstrated.

  17. Thin films, asphaltenes, and reservoir wettability

    SciTech Connect

    Kaminsky, R.; Bergeron, V.; Radke, C.J. |

    1993-04-01

    Reservoir wettability impacts the success of oil recovery by waterflooding and other methods. To understand wettability and its alteration, thin-film forces in solid-aqueous-oil systems must be elucidated. Upon rupture of thick aqueous films separating the oil and rock phases, asphaltene components in the crude oil adsorb irreversibly on the solid surface, changing it from water-wet to oil-wet. Conditions of wettability alteration can be found by performing adhesion tests, in which an oil droplet is brought into contact with a solid surface. Exceeding a critical capillary pressure destabilizes the film, causing spontaneous film rupture to a molecularly adsorbed layer and oil adhesion accompanied by pinning at the three-phase contact line. The authors conduct adhesion experiments similar to those of Buckley and Morrow and simultaneously examine the state of the underlying thin film using optical microscopy and microinterferometry. Aqueous thin films between an asphaltic Orcutt crude oil and glass surfaces are studied as a function of aqueous pH and salinity. For the first time, they prove experimentally that strongly water-wet to strongly oil-wet wettability alteration and contact-angle pinning occur when thick aqueous films thin to molecularly adsorbed films and when the oil phase contains asphaltene molecules.

  18. Thin-Film Resistor Array Characterization.

    DTIC Science & Technology

    1994-12-01

    design and bonding wire current carrying capacity. The resistive film should also be suitable for deposition in a thin-film form (by sputtering or vacuum...evaporation). In the present array design, the elements are fabricated use NiCr metallization, the in- dividual elements being patterned by wet

  19. Thin transparent films formed from powdered glass

    NASA Technical Reports Server (NTRS)

    1965-01-01

    Glass film less than five mils thick is formed from powdered glass dispersed in an organic liquid, deposited on a substrate, and fused into place. The thin films can be cut and shaped for contact lenses, optical filters and insulating layers.

  20. Induced electronic anisotropy in bismuth thin films

    SciTech Connect

    Liao, Albert D.; Yao, Mengliang; Opeil, Cyril; Katmis, Ferhat; Moodera, Jagadeesh S.; Li, Mingda; Tang, Shuang; Dresselhaus, Mildred S.

    2014-08-11

    We use magneto-resistance measurements to investigate the effect of texturing in polycrystalline bismuth thin films. Electrical current in bismuth films with texturing such that all grains are oriented with the trigonal axis normal to the film plane is found to flow in an isotropic manner. By contrast, bismuth films with no texture such that not all grains have the same crystallographic orientation exhibit anisotropic current flow, giving rise to preferential current flow pathways in each grain depending on its orientation. Extraction of the mobility and the phase coherence length in both types of films indicates that carrier scattering is not responsible for the observed anisotropic conduction. Evidence from control experiments on antimony thin films suggests that the anisotropy is a result of bismuth's large electron effective mass anisotropy.

  1. Adhesion and friction of thin metal films

    NASA Technical Reports Server (NTRS)

    Buckley, D. H.

    1976-01-01

    Sliding friction experiments were conducted in vacuum with thin films of titanium, chromium, iron, and platinum sputter deposited on quartz or mica substrates. A single crystal hemispherically tipped gold slider was used in contact with the films at loads of 1.0 to 30.0 and at a sliding velocity of 0.7 mm/min at 23 C. Test results indicate that the friction coefficient is dependent on the adhesion of two interfaces, that between the film and its substrate and the slider and the film. There exists a relationship between the percent d bond character of metals in bulk and in thin film form and the friction coefficient. Oxygen can increase adhesive bonding of a metal film (platinum) to a substrate.

  2. Flexible Thin Metal Film Thermal Sensing System

    NASA Technical Reports Server (NTRS)

    Thomsen, Donald Laurence (Inventor)

    2012-01-01

    A flexible thin metal film thermal sensing system is provided. A thermally-conductive film made from a thermally-insulating material is doped with thermally-conductive material. At least one layer of electrically-conductive metal is deposited directly onto a surface of the thermally-conductive film. One or more devices are coupled to the layer(s) to measure an electrical characteristic associated therewith as an indication of temperature.

  3. Glassy dynamics in thin films of polystyrene

    NASA Astrophysics Data System (ADS)

    Fukao, Koji; Koizumi, Hiroki

    2008-02-01

    Glassy dynamics was investigated for thin films of atactic polystyrene by complex electric capacitance measurements using dielectric relaxation spectroscopy. During the isothermal aging process the real part of the electric capacitance increased with time, whereas the imaginary part decreased with time. It follows that the aging time dependences of real and imaginary parts of the electric capacitance were primarily associated with change in volume (film thickness) and dielectric permittivity, respectively. Further, dielectric permittivity showed memory and rejuvenation effects in a similar manner to those observed for poly(methyl methacrylate) thin films. On the other hand, volume did not show a strong rejuvenation effect.

  4. Thin-film Rechargeable Lithium Batteries

    DOE R&D Accomplishments Database

    Dudney, N. J.; Bates, J. B.; Lubben, D.

    1995-06-01

    Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

  5. Elastohydrodynamic studies using thin film transducers

    NASA Astrophysics Data System (ADS)

    Safa, M. M. A.; MacPherson, P. B.

    1984-01-01

    Thin film microtransducers for application to the study of the variation of pressure, temperature, and oil film thickness in an elastohydrodynamically lubricated, nominal line contact were developed. Fabrication techniques were improved to enhance the useful life. Techniques to achieve higher resolution by reducing sensor size and improving the signal monitoring circuitry were developed. Material properties in thin film form used in fabricating the sensors were examined. Possible sources of errors in interpreting the results obtained from these devices were studied. Results under various operating conditions were compared with theoretical and experimental results, and reasonably good agreement is found.

  6. Thin-film rechargeable lithium batteries

    SciTech Connect

    Dudney, N.J.; Bates, J.B.; Lubben, D.

    1995-06-01

    Thin-film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin-film battery.

  7. Thin film absorber for a solar collector

    DOEpatents

    Wilhelm, William G.

    1985-01-01

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  8. Thin Ice Films at Mineral Surfaces.

    PubMed

    Yeşilbaş, Merve; Boily, Jean-François

    2016-07-21

    Ice films formed at mineral surfaces are of widespread occurrence in nature and are involved in numerous atmospheric and terrestrial processes. In this study, we studied thin ice films at surfaces of 19 synthetic and natural mineral samples of varied structure and composition. These thin films were formed by sublimation of thicker hexagonal ice overlayers mostly produced by freezing wet pastes of mineral particles at -10 and -50 °C. Vibration spectroscopy revealed that thin ice films contained smaller populations of strongly hydrogen-bonded water molecules than in hexagonal ice and liquid water. Thin ice films at the surfaces of the majority of minerals considered in this work [i.e., metal (oxy)(hydr)oxides, phyllosilicates, silicates, volcanic ash, Arizona Test Dust] produced intense O-H stretching bands at ∼3400 cm(-1), attenuated bands at ∼3200 cm(-1), and liquid-water-like bending band at ∼1640 cm(-1) irrespective of structure and composition. Illite, a nonexpandable phyllosilicate, is the only mineral that stabilized a form of ice that was strongly resilient to sublimation in temperatures as low as -50 °C. As mineral-bound thin ice films are the substrates upon which ice grows from water vapor or aqueous solutions, this study provides new constraints from which their natural occurrences can be understood.

  9. Carrier lifetimes in thin-film photovoltaics

    NASA Astrophysics Data System (ADS)

    Baek, Dohyun

    2015-09-01

    The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current.

  10. Aging in Thin Metallic Films.

    DTIC Science & Technology

    1978-03-01

    indicator of film composition . Compositions were adjusted for low values of ~ in the films of interest here. Strain sensitivity can occur as a result...of inadequate compositional control during deposition or compositional modification fol l owing deposition . 0 0 The films used for the experiments...months . All films Including the ternary gold composition (Figure 2) show large changes in due to magnetic annealing , when the bias field is positioned

  11. Coalescence and percolation in thin metal films

    NASA Astrophysics Data System (ADS)

    Yu, X.; Duxbury, P. M.; Jeffers, G.; Dubson, M. A.

    1991-12-01

    Metals thermally evaporated onto warm insulating substrates evolve to the thin-film state via the morphological sequence: compact islands, elongated islands, percolation, hole filling, and finally the thin-film state. The coverage at which the metal percolates (pc) is often considerably higher than that predicted by percolation models, such as inverse swiss cheese or lattice percolation. Using a simple continuum model, we show that high-pc's arise naturally in thin films that exhibit a crossover from full coalescence of islands at early stages of growth to partial coalescence at later stages. In this interrupted-coalescence model, full coalescence of islands occurs up to a critical island radius Rc, after which islands overlap, but do not fully coalesce. We present the morphology of films and the critical area coverages generated by this model.

  12. Method for making thin polypropylene film

    DOEpatents

    Behymer, R.D.; Scholten, J.A.

    1985-11-21

    An economical method is provided for making uniform thickness polypropylene film as thin as 100 Angstroms. A solution of polypropylene dissolved in xylene is formed by mixing granular polypropylene and xylene together in a flask at an elevated temperature. A substrate, such as a glass plate or microscope slide is immersed in the solution. When the glass plate is withdrawn from the solution at a uniform rate, a thin polypropylene film forms on a flat surface area of the glass plate as the result of xylene evaporation. The actual thickness of the polypropylene film is functional of the polypropylene in xylene solution concentration, and the particular withdrawal rate of the glass plate from the solution. After formation, the thin polypropylene film is floated from the glass plate onto the surface of water, from which it is picked up with a wire hoop.

  13. Simulated Thin-Film Growth and Imaging

    NASA Astrophysics Data System (ADS)

    Schillaci, Michael

    2001-06-01

    Thin-films have become the cornerstone of the electronics, telecommunications, and broadband markets. A list of potential products includes: computer boards and chips, satellites, cell phones, fuel cells, superconductors, flat panel displays, optical waveguides, building and automotive windows, food and beverage plastic containers, metal foils, pipe plating, vision ware, manufacturing equipment and turbine engines. For all of these reasons a basic understanding of the physical processes involved in both growing and imaging thin-films can provide a wonderful research project for advanced undergraduate and first-year graduate students. After producing rudimentary two- and three-dimensional thin-film models incorporating ballsitic deposition and nearest neighbor Coulomb-type interactions, the QM tunneling equations are used to produce simulated scanning tunneling microscope (SSTM) images of the films. A discussion of computational platforms, languages, and software packages that may be used to accomplish similar results is also given.

  14. Tungsten-doped thin film materials

    DOEpatents

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  15. Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films

    SciTech Connect

    Brinker, C.J.; Prakash, S.S.

    1999-09-07

    A method for preparing aerogel thin films by an ambient-pressure, continuous process is disclosed. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

  16. Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films

    DOEpatents

    Brinker, Charles Jeffrey; Prakash, Sai Sivasankaran

    1999-01-01

    A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

  17. Interferometry of thick and thin films

    NASA Astrophysics Data System (ADS)

    Conroy, Michael

    2007-06-01

    Interferometry is now an established technique for the measurement of surface topography. It has the capability of combining sub-nanometre resolution. A very useful extension to its capability is the ability to measure thick and thin films on a local scale. For films with thicknesses in excess of 1-2μm (depending on refractive index), the SWLI interaction with the film leads simply the formation of two localised fringes, each corresponding to a surface interface. It is relatively trivial to locate the positions of these two envelope maxima and therefore determine the film thickness, assuming the refractive index is known. For thin films (with thicknesses ~20nm to ~2μm, again depending on the index), the SWLI interaction leads to the formation of a single interference maxima. In this context, it is appropriate to describe the thin film structure in terms of optical admittances; it is this regime that is addressed through the introduction of a new function, the 'helical conjugate field' (HCF) function. This function may be considered as providing a 'signature' of the multilayer measured so that through optimization, the thin film multilayer may be determined on a local scale.

  18. A high power ZnO thin film piezoelectric generator

    NASA Astrophysics Data System (ADS)

    Qin, Weiwei; Li, Tao; Li, Yutong; Qiu, Junwen; Ma, Xianjun; Chen, Xiaoqiang; Hu, Xuefeng; Zhang, Wei

    2016-02-01

    A highly efficient and large area piezoelectric ZnO thin film nanogenerator (NG) was fabricated. The ZnO thin film was deposited onto a Si substrate by pulsed laser ablation at a substrate temperature of 500 °C. The deposited ZnO film exhibited a preferred c-axis orientation and a high piezoelectric value of 49.7 pm/V characterized using Piezoelectric Force Microscopy (PFM). Thin films of ZnO were patterned into rectangular power sources with dimensions of 0.5 × 0.5 cm2 with metallic top and bottom electrodes constructed via conventional semiconductor lithographic patterning processes. The NG units were subjected to periodic bending/unbending motions produced by mechanical impingement at a fixed frequency of 100 Hz at a pressure of 0.4 kg/cm2. The output electrical voltage, current density, and power density generated by one ZnO NG were recorded. Values of ∼95 mV, 35 μA cm-2 and 5.1 mW cm-2 were recorded. The level of power density is typical to that produced by a PZT NG on a flexible substrate. Higher energy NG sources can be easily created by adding more power units either in parallel or in series. The thin film ZnO NG technique is highly adaptable with current semiconductor processes, and as such, is easily integrated with signal collecting circuits that are compatible with mass production. A typical application would be using the power harvested from irregular human foot motions to either to operate blue LEDs directly or to drive a sensor network node in mille-power level without any external electric source and circuits.

  19. MOF thin films: existing and future applications.

    PubMed

    Shekhah, O; Liu, J; Fischer, R A; Wöll, Ch

    2011-02-01

    The applications and potentials of thin film coatings of metal-organic frameworks (MOFs) supported on various substrates are discussed in this critical review. Because the demand for fabricating such porous coatings is rather obvious, in the past years several synthesis schemes have been developed for the preparation of thin porous MOF films. Interestingly, although this is an emerging field seeing a rapid development a number of different applications on MOF films were either already demonstrated or have been proposed. This review focuses on the fabrication of continuous, thin porous films, either supported on solid substrates or as free-standing membranes. The availability of such two-dimensional types of porous coatings opened the door for a number of new perspectives for functionalizing surfaces. Also for the porous materials themselves, the availability of a solid support to which the MOF-films are rigidly (in a mechanical sense) anchored provides access to applications not available for the typical MOF powders with particle sizes of a few μm. We will also address some of the potential and applications of thin films in different fields like luminescence, QCM-based sensors, optoelectronics, gas separation and catalysis. A separate chapter has been devoted to the delamination of MOF thin films and discusses the potential to use them as free-standing membranes or as nano-containers. The review also demonstrates the possibility of using MOF thin films as model systems for detailed studies on MOF-related phenomena, e.g. adsorption and diffusion of small molecules into MOFs as well as the formation mechanism of MOFs (101 references).

  20. Microscale damping using thin film active materials

    NASA Astrophysics Data System (ADS)

    Kerrigan, Catherine A.; Ho, Ken K.; Mohanchandra, K. P.; Carman, Gregory P.

    2007-04-01

    This paper focuses on understanding and developing a new approach to dampen MEMS structures using both experiments and analytical techniques. Thin film Nitinol and thin film Terfenol-D are evaluated as a damping solution to the micro scale damping problem. Stress induced twin boundary motion in Nitinol is used to passively dampen potentially damaging vibrations. Magnetic domain wall motion is used to passively dampen vibration in Terfenol-D. The thin films of Nitinol, Nitinol/Silicon laminates and Nitinol/Terfenol-D/Nickel laminates have been produced using a sputter deposition process and damping properties have been evaluated. Dynamic testing shows substantial damping (tan δ) measurable in each case. Nitinol film samples were tested in the Differential Scanning Calorimetry (DSC) to determine phase transformation temperatures. The twin boundary mechanism by which energy absorption occurs is present at all points below the Austenite start temperature (approximately 69°C in our film) and therefore allows damping at cold temperatures where traditional materials fail. Thin film in the NiTi/Si laminate was found to produce substantially higher damping (tan δ = 0.28) due to the change in loading condition. The NiTi/Si laminate sample was tested in bending allowing the twin boundaries to be reset by cyclic tensile and compressive loads. The thin film Terfenol-D in the Nitinol/Terfenol-D/Nickel laminate was shown to produce large damping (tan δ = 0.2). In addition to fabricating and testing, an analytical model of a heterogeneous layered thin film damping material was developed and compared to experimental work.

  1. Niobium Thin Film Characterization for Thin Film Technology Used in Superconducting Radiofrequency Cavities

    NASA Astrophysics Data System (ADS)

    Dai, Yishu; Valente-Feliciano, Anne-Marie

    2015-10-01

    Superconducting RadioFrequency (SRF) penetrates about 40-100 nm of the top surface, making thin film technology possible in producing superconducting cavities. Thin film is based on the deposition of a thin Nb layer on top of a good thermal conducting material such as Al or Cu. Thin film allows for better control of the surface and has negligible response to the Earth's magnetic field, eliminating the need for magnetic shielding of the cavities. Thin film superconductivity depends heavily on coating process conditions, involving controllable parameters such as crystal plane orientation, coating temperature, and ion energy. MgO and Al2O3 substrates are used because they offer very smooth surfaces, ideal for studying film growth. Atomic Force Microscopy is used to characterize surface's morphology. It is evident that a lower nucleation energy and a long coating time increases the film quality in the r-plane sapphire crystal orientation. The quality of the film increases with thickness. Nb films coated on r-plane, grow along the (001) plane and yield a much higher RRR compared to the films grown on a- and c-planes. This information allows for further improvement on the research process for thin film technology used in superconducting cavities for the particle accelerators. National Science Foundation, Department of Energy, Jefferson Lab, Old Dominion University.

  2. Hydrogenated amorphous silicon thin film anode for proton conducting batteries

    NASA Astrophysics Data System (ADS)

    Meng, Tiejun; Young, Kwo; Beglau, David; Yan, Shuli; Zeng, Peng; Cheng, Mark Ming-Cheng

    2016-01-01

    Hydrogenated amorphous Si (a-Si:H) thin films deposited by chemical vapor deposition were used as anode in a non-conventional nickel metal hydride battery using a proton-conducting ionic liquid based non-aqueous electrolyte instead of alkaline solution for the first time, which showed a high specific discharge capacity of 1418 mAh g-1 for the 38th cycle and retained 707 mAh g-1 after 500 cycles. A maximum discharge capacity of 3635 mAh g-1 was obtained at a lower discharge rate, 510 mA g-1. This electrochemical discharge capacity is equivalent to about 3.8 hydrogen atoms stored in each silicon atom. Cyclic voltammogram showed an improved stability 300 mV below the hydrogen evolution potential. Both Raman spectroscopy and Fourier transform infrared spectroscopy studies showed no difference to the pre-existing covalent Si-H bond after electrochemical cycling and charging, indicating a non-covalent nature of the Si-H bonding contributing to the reversible hydrogen storage of the current material. Another a-Si:H thin film was prepared by an rf-sputtering deposition followed by an ex-situ hydrogenation, which showed a discharge capacity of 2377 mAh g-1.

  3. Sprayed lanthanum doped zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Bouznit, Y.; Beggah, Y.; Ynineb, F.

    2012-01-01

    Lanthanum doped zinc oxide thin films were deposited on soda-lime glass substrates using a pneumatic spray pyrolysis technique. The films were prepared using different lanthanum concentrations at optimum deposition parameters. We studied the variations in structural, morphological and optical properties of the samples due to the change of doping concentration in precursor solutions. X-ray diffraction (XRD) patterns show that pure and La-doped ZnO thin films are highly textured along c-axis perpendicular to the surface of the substrate. Scanning electron micrographs show that surface morphology of ZnO films undergoes a significant change according to lanthanum doping. All films exhibit a transmittance higher than 80% in the visible region.

  4. Electrochemical Analysis of Conducting Polymer Thin Films

    PubMed Central

    Vyas, Ritesh N.; Wang, Bin

    2010-01-01

    Polyelectrolyte multilayers built via the layer-by-layer (LbL) method has been one of the most promising systems in the field of materials science. Layered structures can be constructed by the adsorption of various polyelectrolyte species onto the surface of a solid or liquid material by means of electrostatic interaction. The thickness of the adsorbed layers can be tuned precisely in the nanometer range. Stable, semiconducting thin films are interesting research subjects. We use a conducting polymer, poly(p-phenylene vinylene) (PPV), in the preparation of a stable thin film via the LbL method. Cyclic voltammetry and electrochemical impedance spectroscopy have been used to characterize the ionic conductivity of the PPV multilayer films. The ionic conductivity of the films has been found to be dependent on the polymerization temperature. The film conductivity can be fitted to a modified Randle’s circuit. The circuit equivalent calculations are performed to provide the diffusion coefficient values. PMID:20480052

  5. AC impedance analysis of polypyrrole thin films

    NASA Technical Reports Server (NTRS)

    Penner, Reginald M.; Martin, Charles R.

    1987-01-01

    The AC impedance spectra of thin polypyrrole films were obtained at open circuit potentials from -0.4 to 0.4 V vs SCE. Two limiting cases are discussed for which simplified equivalent circuits are applicable. At very positive potentials, the predominantly nonfaradaic AC impedance of polypyrrole is very similar to that observed previously for finite porous metallic films. Modeling of the data with the appropriate equivalent circuit permits effective pore diameter and pore number densities of the oxidized film to be estimated. At potentials from -0.4 to -0.3 V, the polypyrrole film is essentially nonelectronically conductive and diffusion of polymer oxidized sites with their associated counterions can be assumed to be linear from the film/substrate electrode interface. The equivalent circuit for the polypyrrole film at these potentials is that previously described for metal oxide, lithium intercalation thin films. Using this model, counterion diffusion coefficients are determined for both semi-infinite and finite diffusion domains. In addition, the limiting low frequency resistance and capacitance of the polypyrrole thin fims was determined and compared to that obtained previously for thicker films of the polymer. The origin of the observed potential dependence of these low frequency circuit components is discussed.

  6. Magnetowetting of Ferrofluidic Thin Liquid Films

    NASA Astrophysics Data System (ADS)

    Tenneti, Srinivas; Subramanian, Sri Ganesh; Chakraborty, Monojit; Soni, Gaurav; Dasgupta, Sunando

    2017-03-01

    An extended meniscus of a ferrofluid solution on a silicon surface is subjected to axisymmetric, non-uniform magnetic field resulting in significant forward movement of the thin liquid film. Image analyzing interferometry is used for accurate measurement of the film thickness profile, which in turn, is used to determine the instantaneous slope and the curvature of the moving film. The recorded video, depicting the motion of the film in the Lagrangian frame of reference, is analyzed frame by frame, eliciting accurate information about the velocity and acceleration of the film at any instant of time. The application of the magnetic field has resulted in unique changes of the film profile in terms of significant non-uniform increase in the local film curvature. This was further analyzed by developing a model, taking into account the effect of changes in the magnetic and shape-dependent interfacial force fields.

  7. Magnetowetting of Ferrofluidic Thin Liquid Films

    PubMed Central

    Tenneti, Srinivas; Subramanian, Sri Ganesh; Chakraborty, Monojit; Soni, Gaurav; DasGupta, Sunando

    2017-01-01

    An extended meniscus of a ferrofluid solution on a silicon surface is subjected to axisymmetric, non-uniform magnetic field resulting in significant forward movement of the thin liquid film. Image analyzing interferometry is used for accurate measurement of the film thickness profile, which in turn, is used to determine the instantaneous slope and the curvature of the moving film. The recorded video, depicting the motion of the film in the Lagrangian frame of reference, is analyzed frame by frame, eliciting accurate information about the velocity and acceleration of the film at any instant of time. The application of the magnetic field has resulted in unique changes of the film profile in terms of significant non-uniform increase in the local film curvature. This was further analyzed by developing a model, taking into account the effect of changes in the magnetic and shape-dependent interfacial force fields. PMID:28303971

  8. Evolution of morphology and structure of Pb thin films grown by pulsed laser deposition at different substrate temperatures

    SciTech Connect

    Lorusso, Antonella Maiolo, Berlinda; Perrone, Alessio; Gontad, Francisco; Maruccio, Giuseppe; Tasco, Vittorianna

    2014-03-15

    Pb thin films were prepared by pulsed laser deposition on a Si (100) substrate at different growth temperatures to investigate their morphology and structure. The morphological analysis of the thin metal films showed the formation of spherical submicrometer grains whose average size decreased with temperature. X-ray diffraction measurements confirmed that growth temperature influences the Pb polycrystalline film structure. A preferred orientation of Pb (111) normal to the substrate was achieved at 30 °C and became increasingly pronounced along the Pb (200) plane as the substrate temperature increased. These thin films could be used to synthesize innovative materials, such as metallic photocathodes, with improved photoemission performances.

  9. Pulsed laser deposition of ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Sengupta, Somnath; McKnight, Steven H.; Sengupta, Louise C.

    1997-05-01

    It has been shown that in bulk ceramic form, the barium to strontium ratio in barium strontium titanium oxide (Ba1- xSrxTiO3, BSTO) affects the voltage tunability and electronic dissipation factor in an inverse fashion; increasing the strontium content reduces the dissipation factor at the expense of lower voltage tunability. However, the oxide composites of BSTO developed at the Army Research Laboratory still maintain low electronic loss factors for all compositions examined. The intent of this study is to determine whether such effects can be observed in the thin film form of the oxide composites. The pulsed laser deposition (PLD) method has been used to deposit the thin films. The different compositions of the compound (with 1 wt% of the oxide additive) chosen were: Ba0.3Sr0.7TiO3, Ba0.4Sr0.6TiO3, Ba0.5Sr0.5TiO3, Ba0.6Sr0.4TiO3, and Ba0.7Sr0.3TiO3. The electronic properties investigated in this study were the dielectric constant and the voltage tunability. The morphology of the thin films were examined using the atomic force microscopy. Fourier transform Raman spectroscopy was also utilized for optical characterization of the thin films. The electronic and optical properties of the thin films and the bulk ceramics were compared. The results of these investigations are discussed.

  10. Photoluminescence Study of Copper Selenide Thin Films

    NASA Astrophysics Data System (ADS)

    Urmila, K. S.; Asokan, T. Namitha; Pradeep, B.

    2011-10-01

    Thin films of Copper Selenide of composition of composition Cu7Se4 with thickness 350 nm are deposited on glass substrate at a temperature of 498 K±5 K and pressure of 10-5 mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%) and Selenium (99.99%) as the elemental starting material. The deposited film is characterized structurally using X-ray Diffraction. The structural parameters such as lattice constant, particle size, dislocation density; number of crystallites per unit area and strain in the film are evaluated. Photoluminescence of the film is analyzed at room temperature using Fluoro Max-3 Spectrofluorometer.

  11. Thin Film Micro Arrays with Immobilized DNA for Hybridization Analysis

    DTIC Science & Technology

    2002-04-05

    nitride (SiNj)) and magnetron sputtering (A120 3, TiO 2, ZnO , SnO2 ). All films were deposited at temperatures _< 150 QC. A combination of 126 these layers...their ability to attach DNA probes. Glass and oxide films (Si0 2, TiO2, ZnO , SnO2 ) were modified, while plastic substrates such as polyimide (PI), thin...Activation Glass ++ SiO 2 ++ SiNx Pt - TiO2 ++ A110 3 PET + ZnO ++ C-Si p PEEK SnO ++ C-Si n PES a-Si:H C-Si i PC ? a-C:H Photoresist PEN - VC-Si

  12. Thin film dielectric composite materials

    DOEpatents

    Jia, Quanxi; Gibbons, Brady J.; Findikoglu, Alp T.; Park, Bae Ho

    2002-01-01

    A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

  13. 2D modeling of silicon based thin film dual and triple junction solar cells

    NASA Astrophysics Data System (ADS)

    Xiao, Y. G.; Uehara, K.; Lestrade, M.; Li, Z. Q.; Li, Z. M. S.

    2009-08-01

    Based on Crosslight APSYS, thin film amorphous Si (a-Si:H)/microcrystalline (μc-Si) dual-junction (DJ) and a- Si:H/amorphous SiGe:H (a-SiGe:H)/μc-Si triple-junction (TJ) solar cells are modeled. Basic physical quantities like band diagrams, optical absorption and generation are obtained. Quantum efficiency and I-V curves for individual junctions are presented for current matching analyses. The whole DJ and TJ cell I-V curves are also presented and the results are discussed with respect to the top surface ZnO:Al TCO layer affinity. The interface texture effect is modeled with FDTD (finite difference time domain) module and results for top junction are presented. The modeling results give possible clues to achieve high efficiency for DJ and TJ thin film solar cells.

  14. Optical emission diagnostics of electron cyclotron resonance and glow discharge plasmas for a-Si:H and a-SiC:H film depositions

    NASA Technical Reports Server (NTRS)

    Yang, C. L.; Shing, Y. H.; Allevato, C. E.

    1988-01-01

    It is demonstrated that the steady-state and kinetic characteristics of ECR (electron cyclotron resonance) and RF glow discharge plasmas can be readily monitored by OES (optical emission spectroscopy) in real time during a-Si:H and a-SiC:H film depositions using an OMA detection system. The ECR and RF glow discharge plasmas used for a-Si:H and a-SiC:H film depositions were studied by monitoring the emission of SiH(asterisk), H(asterisk), H(asterisk)2, and CH(asterisk) excited states. The OES of the ECR plasma shows a strong emission at 434 nm from H(asterisk), which is not detectable in the glow discharge plasma. Steady-state OES studies have established preliminary correlations between SiH(asterisk) and CH(asterisk) emission intensities and the film deposition rate. Transient OES spectra of SiH4 and CH4 plasmas have shown different kinetics in SiH(asterisk) and CH(asterisk) emission intensities. Transient studies of the SiH(asterisk) emission intensity have indicated that additional mechanisms for producing the SiH(asterisk) species become evident in hydrogen-diluted silane plasmas.

  15. Anomalous hopping conduction in nanocrystalline/amorphous composites and amorphous semiconductor thin films

    NASA Astrophysics Data System (ADS)

    Kakalios, James; Bodurtha, Kent

    Composite nanostructured materials consisting of nanocrystals (nc) embedded within a thin film amorphous matrix can exhibit novel opto-electronic properties. Composite films are synthesized in a dual-chamber co-deposition PECVD system capable of producing nanocrystals of material A and embedding then within a thin film matrix of material B. Electronic conduction in composite thin films of hydrogenated amorphous silicon (a-Si:H) containing nc-germanium or nc-silicon inclusions, as well as in undoped a-Si:H, does not follow an Arrhenius temperature dependence, but rather is better described by an anomalous hopping expression (exp[-(To/T)3/4) , as determined from the ``reduced activation energy'' proposed by Zabrodskii and Shlimak. This temperature dependence has been observed in other thin film resistive materials, such as ultra-thin disordered films of Ag, Bi, Pb and Pd; carbon-black polymer composites; and weakly coupled Au and ZnO quantum dot arrays. There is presently no accepted theoretical understanding of this expression. The concept of a mobility edge, accepted for over four decades, appears to not be necessary to account for charge transport in amorphous semiconductors. Supported by NSF-DMR and the Minnesota Nano Center.

  16. Crystallization of zirconia based thin films.

    PubMed

    Stender, D; Frison, R; Conder, K; Rupp, J L M; Scherrer, B; Martynczuk, J M; Gauckler, L J; Schneider, C W; Lippert, T; Wokaun, A

    2015-07-28

    The crystallization kinetics of amorphous 3 and 8 mol% yttria stabilized zirconia (3YSZ and 8YSZ) thin films grown by pulsed laser deposition (PLD), spray pyrolysis and dc-magnetron sputtering are explored. The deposited films were heat treated up to 1000 °C ex situ and in situ in an X-ray diffractometer. A minimum temperature of 275 °C was determined at which as-deposited amorphous PLD grown 3YSZ films fully crystallize within five hours. Above 325 °C these films transform nearly instantaneously with a high degree of micro-strain when crystallized below 500 °C. In these films the t'' phase crystallizes which transforms at T > 600 °C to the t' phase upon relaxation of the micro-strain. Furthermore, the crystallization of 8YSZ thin films grown by PLD, spray pyrolysis and dc-sputtering are characterized by in situ XRD measurements. At a constant heating rate of 2.4 K min(-1) crystallization is accomplished after reaching 800 °C, while PLD grown thin films were completely crystallized already at ca. 300 °C.

  17. Method for synthesizing thin film electrodes

    DOEpatents

    Boyle, Timothy J.

    2007-03-13

    A method for making a thin-film electrode, either an anode or a cathode, by preparing a precursor solution using an alkoxide reactant, depositing multiple thin film layers with each layer approximately 500 1000 .ANG. in thickness, and heating the layers to above 600.degree. C. to achieve a material with electrochemical properties suitable for use in a thin film battery. The preparation of the anode precursor solution uses Sn(OCH.sub.2C(CH.sub.3).sub.3).sub.2 dissolved in a solvent in the presence of HO.sub.2CCH.sub.3 and the cathode precursor solution is formed by dissolving a mixture of (Li(OCH.sub.2C(CH.sub.3).sub.3)).sub.8 and Co(O.sub.2CCH.sub.3).H.sub.2O in at least one polar solvent.

  18. Thin Film Transistors On Plastic Substrates

    DOEpatents

    Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

    2004-01-20

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

  19. Thin film ferroelectric electro-optic memory

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita (Inventor); Thakoor, Anilkumar P. (Inventor)

    1993-01-01

    An electrically programmable, optically readable data or memory cell is configured from a thin film of ferroelectric material, such as PZT, sandwiched between a transparent top electrode and a bottom electrode. The output photoresponse, which may be a photocurrent or photo-emf, is a function of the product of the remanent polarization from a previously applied polarization voltage and the incident light intensity. The cell is useful for analog and digital data storage as well as opto-electric computing. The optical read operation is non-destructive of the remanent polarization. The cell provides a method for computing the product of stored data and incident optical data by applying an electrical signal to store data by polarizing the thin film ferroelectric material, and then applying an intensity modulated optical signal incident onto the thin film material to generate a photoresponse therein related to the product of the electrical and optical signals.

  20. Mesoscale morphologies in polymer thin films.

    SciTech Connect

    Ramanathan, M.; Darling, S. B.

    2011-06-01

    In the midst of an exciting era of polymer nanoscience, where the development of materials and understanding of properties at the nanoscale remain a major R&D endeavor, there are several exciting phenomena that have been reported at the mesoscale (approximately an order of magnitude larger than the nanoscale). In this review article, we focus on mesoscale morphologies in polymer thin films from the viewpoint of origination of structure formation, structure development and the interaction forces that govern these morphologies. Mesoscale morphologies, including dendrites, holes, spherulites, fractals and honeycomb structures have been observed in thin films of homopolymer, copolymer, blends and composites. Following a largely phenomenological level of description, we review the kinetic and thermodynamic aspects of mesostructure formation outlining some of the key mechanisms at play. We also discuss various strategies to direct, limit, or inhibit the appearance of mesostructures in polymer thin films as well as an outlook toward potential areas of growth in this field of research.

  1. Vibration welding system with thin film sensor

    DOEpatents

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  2. Processing and modeling issues for thin-film solar cell devices. Final report

    SciTech Connect

    Birkmire, R.W.; Phillips, J.E.

    1997-11-01

    During the third phase of the subcontract, IEC researchers have continued to provide the thin film PV community with greater depth of understanding and insight into a wide variety of issues including: the deposition and characterization of CuIn{sub 1-x}Ga{sub x}Se{sub 2}, a-Si, CdTe, CdS, and TCO thin films; the relationships between film and device properties; and the processing and analysis of thin film PV devices. This has been achieved through the systematic investigation of all aspects of film and device production and through the analysis and quantification of the reaction chemistries involved in thin film deposition. This methodology has led to controlled fabrications of 15% efficient CuIn{sub 1-x}Ga{sub x}Se{sub 2} solar cells over a wide range of Ga compositions, improved process control of the fabrication of 10% efficient a-Si solar cells, and reliable and generally applicable procedures for both contacting and doping films. Additional accomplishments are listed below.

  3. Preparation and characterization of hydrogenated amorphous silicon thin films and thin film solar cells produced by ion plating techniques. Final report, 1 January 1979-31 May 1980

    SciTech Connect

    1980-05-01

    Ion plating techniques for the preparation of hydrogenated amorphous silicon thin films have been successfully developed. The technique involves essentially the evaporation of elemental silicon through a d.c. produced hydrogen plasma. In this way hydrogen has been successfully incorporated into amorphous silicon films in concentrations as high as 30 atomic percent. Infrared spectroscopy indicates the usual SiH/sub x/ stretching mode at approximately 2000 cm/sup -1/. Further evidence for the bonding of hydrogen was obtained from ESR measurement of hydrogenated and unhydrogenated samples. The measured unpaired spin density was a factor of 25 less in the hydrogenated sample. The optical absorption edges of the hydrogenated films fell in the usual range between 1.7 and 1.9 eV. Electrical conductivity measurements indicated a substantial reduction in the density of defect states in the gap as expected. It was also shown that hydrogenated amorphous silicon prepared by ion-plating could be doped by co-evaporation of the dopant element during film deposition. Both co-evaporated phosphorous and co-evaporated bismuth have been found to substantially increase the dark conductivity of a-Si:H while shifting the Fermi level towards the conduction band edge. An x-ray method for estimating the density and hydrogen content of a-Si:H has been developed. The measurement of strain in a-Si:H thin films is discussed. (WHK)

  4. Capillary instabilities in thin films. I. Energetics

    SciTech Connect

    Srolovitz, D.J.; Safran, S.A.

    1986-07-01

    A stability theory is presented which describes the conditions under which thin films rupture. It is found that holes in the film will either grow or shrink, depending on whether their initial radius is larger or smaller than a critical value. If the holes grow large enough, they impinge to form islands; the size of which are determined by the surface energies. The formation of grooves where the grain boundary meets the free surface is a potential source of holes which can lead to film rupture. Equilibrium grain boundary groove depths are calculated for finite grain sizes. Comparison of groove depth and film thickness yields microstructural conditions for film rupture. In addition, pits which form at grain boundary vertices, where three grains meet, are another source of film instability.

  5. Thin film oxygen partial pressure sensor

    NASA Technical Reports Server (NTRS)

    Wortman, J. J.; Harrison, J. W.; Honbarrier, H. L.; Yen, J.

    1972-01-01

    The development is described of a laboratory model oxygen partial pressure sensor using a sputtered zinc oxide thin film. The film is operated at about 400 C through the use of a miniature silicon bar. Because of the unique resistance versus temperature relation of the silicon bar, control of the operational temperature is achieved by controlling the resistance. A circuit for accomplishing this is described. The response of sputtered zinc oxide films of various thicknesses to oxygen, nitrogen, argon, carbon dioxide, and water vapor caused a change in the film resistance. Over a large range, film conductance varied approximately as the square root of the oxygen partial pressure. The presence of water vapor in the gas stream caused a shift in the film conductance at a given oxygen partial pressure. A theoretical model is presented to explain the characteristic features of the zinc oxide response to oxygen.

  6. Thin film materials and devices for resistive temperature sensing applications

    NASA Astrophysics Data System (ADS)

    Basantani, Hitesh A.

    Thin films of vanadium oxide (VOx) and hydrogenated amorphous silicon (a-Si:H) are the two dominant material systems used in resistive infrared radiation detectors (microbolometers) for sensing long wave infrared (LWIR) wavelengths in the 8--14 microm range. Typical thin films of VO x (x < 2) currently used in the bolometer industry have a magnitude of temperature coefficient of resistance (TCR) between 2%/K -- 3%/K. In contrast, thin films of hydrogenated germanium (SiGe:H) have |TCR| between 3%/K to 4%/K. Devices made from either of these materials have resulted in similar device performance with NETD ≈ 25 mK. The performance of the microbolometers is limited by the electronic noise, especially 1/f noise. Therefore, regardless of the choice of bolometer sensing material and read out circuitry, manufacturers are constantly striving to reduce 1/f noise while simultaneously increasing TCR to give better signal to noise ratios in their bolometers and ultimately, better image quality with more thermal information to the end user. In this work, thin films of VOx and hydrogenated germanium (Ge:H), having TCR values > 4 %/K are investigated as potential candidates for higher sensitivity next generation of microbolometers. Thin films of VO x were deposited by Biased Target Ion Beam Deposition (BTIBD) (˜85 nm thick). Electrical characterization of lateral resistor structures showed resistivity ranging from 104 O--cm to 2.1 x 104 O--cm, TCR varying from --4%/K to --5%/K, normalized Hooge parameter (alphaH/n) of 5 x 10 -21 to 5 x 10-18 cm3. Thin films of Ge:H were deposited by plasma enhanced chemical vapor deposition (PECVD) by incorporating an increasing amount of crystal fraction in the growing thin films. Thin films of Ge:H having a mixed phase, amorphous + nanocrystalline, having a |TCR| > 6 %/K were deposited with resistivity < 2,300 O--cm and a normalized Hooge's parameter 'alphaH/n' < 2 x 10-20 cm3. Higher TCR materials are desired, however, such materials have

  7. Reduced energy bandgap of a-Si:H films deposited by PECVD at elevating temperatures

    NASA Astrophysics Data System (ADS)

    Cahyono, Yoyok; Maslakah, Umi; Muttaqin, Fuad Darul; Darminto

    2017-01-01

    The hydrogenated amorphous silicon (a-Si:H) films with the thickness of several hundreds nanometer have successfully been grown on the glass substrates by plasma enhanced (PE) chemical vapor deposition (CVD), employing SiH4 gas with H2 dilution. The deposition temperatures being set from 150°C up to 250°C was intended to induce nanocrystalline clusters in the amorphous structure, to reduce dangling bond and to recover defect states in the gap, in order to obtain films with reduced energy band gap. The X-ray diffractometry, UV-Vis spectrometric and atomic force microscopic examinations were conducted to structurally study the samples. The reduction of energy bandgap from 1.89 eV down to 1.03 eV was obtained from the deposited films.

  8. Thin Film Electrodes for Rare Event Detectors

    NASA Astrophysics Data System (ADS)

    Odgers, Kelly; Brown, Ethan; Lewis, Kim; Giordano, Mike; Freedberg, Jennifer

    2017-01-01

    In detectors for rare physics processes, such as neutrinoless double beta decay and dark matter, high sensitivity requires careful reduction of backgrounds due to radioimpurities in detector components. Ultra pure cylindrical resistors are being created through thin film depositions onto high purity substrates, such as quartz glass or sapphire. By using ultra clean materials and depositing very small quantities in the films, low radioactivity electrodes are produced. A new characterization process for cylindrical film resistors has been developed through analytic construction of an analogue to the Van Der Pauw technique commonly used for determining sheet resistance on a planar sample. This technique has been used to characterize high purity cylindrical resistors ranging from several ohms to several tera-ohms for applications in rare event detectors. The technique and results of cylindrical thin film resistor characterization will be presented.

  9. Characterization of Thin Film Dissolution in Water with in Situ Monitoring of Film Thickness Using Reflectometry.

    PubMed

    Yersak, Alexander S; Lewis, Ryan J; Tran, Jenny; Lee, Yung C

    2016-07-13

    Reflectometry was implemented as an in situ thickness measurement technique for rapid characterization of the dissolution dynamics of thin film protective barriers in elevated water temperatures above 100 °C. Using this technique, multiple types of coatings were simultaneously evaluated in days rather than years. This technique enabled the uninterrupted characterization of dissolution rates for different coating deposition temperatures, postdeposition annealing conditions, and locations on the coating surfaces. Atomic layer deposition (ALD) SiO2 and wet thermally grown SiO2 (wtg-SiO2) thin films were demonstrated to be dissolution-predictable barriers for the protection of metals such as copper. A ∼49% reduction in dissolution rate was achieved for ALD SiO2 films by increasing the deposition temperatures from 150 to 300 °C. ALD SiO2 deposited at 300 °C and followed by annealing in an inert N2 environment at 1065 °C resulted in a further ∼51% reduction in dissolution rate compared with the nonannealed sample. ALD SiO2 dissolution rates were thus lowered to values of wtg-SiO2 in water by the combination of increasing the deposition temperature and postdeposition annealing. Thin metal films, such as copper, without a SiO2 barrier corroded at an expected ∼1-2 nm/day rate when immersed in room temperature water. This measurement technique can be applied to any optically transparent coating.

  10. Emittance Theory for Thin Film Selective Emitter

    NASA Technical Reports Server (NTRS)

    Chubb, Donald L.; Lowe, Roland A.; Good, Brian S.

    1994-01-01

    Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).

  11. Micro-sensor thin-film anemometer

    NASA Technical Reports Server (NTRS)

    Sheplak, Mark (Inventor); McGinley, Catherine B. (Inventor); Spina, Eric F. (Inventor); Stephens, Ralph M. (Inventor); Hopson, Jr., Purnell (Inventor); Cruz, Vincent B. (Inventor)

    1996-01-01

    A device for measuring turbulence in high-speed flows is provided which includes a micro-sensor thin-film probe. The probe is formed from a single crystal of aluminum oxide having a 14.degree. half-wedge shaped portion. The tip of the half-wedge is rounded and has a thin-film sensor attached along the stagnation line. The bottom surface of the half-wedge is tilted upward to relieve shock induced disturbances created by the curved tip of the half-wedge. The sensor is applied using a microphotolithography technique.

  12. Borocarbide thin films and tunneling measurements.

    SciTech Connect

    Iavarone, M.; Andreone, A.; Cassinese, A.; Dicapual, R.; giannil, L.; Vagliol, R.; DeWilde, Y.; Crabtree, G. W.

    2000-06-15

    The results obtained by their group in thin film fabrication and STM tunneling on superconducting borocarbides YNi{sub 2}B{sub 2}C have been be briefly reviewed. Results concerning the microwave surface impedance and the S/N planar junctions on LuNi{sub 2}B{sub 2}C thin films have been also presented and analyzed. These new data unambiguously confirm the full BCS nature of the superconducting gap in borocarbides and the absence of significant pair-breaking effects in LuNi{sub 2}B{sub 2}C.

  13. Thin-Film Organic Electronic Devices

    NASA Astrophysics Data System (ADS)

    Katz, Howard E.; Huang, Jia

    2009-08-01

    We review recently published advancements in thin-film organic devices, ranging from the composition and properties of organic materials to be used in devices, to the applications of devices, with special emphasis on thin-film transistors, diodes, and chemical sensors. We present exemplary materials used in each kind of device, outline the physical mechanisms behind the functioning of the devices, and discuss the most advanced capabilities of the devices and device assemblies. Advantages to the selection of organic and polymeric materials, future prospects, and challenges for organic-based electronics are also considered.

  14. Feasibility Study of Thin Film Thermocouple Piles

    NASA Technical Reports Server (NTRS)

    Sisk, R. C.

    2001-01-01

    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  15. Micro-sensor thin-film anemometer

    NASA Technical Reports Server (NTRS)

    Sheplak, Mark (Inventor); Mcginley, Catherine B. (Inventor); Spina, Eric F. (Inventor); Stephens, Ralph M. (Inventor); Hopson, Purnell, Jr. (Inventor); Cruz, Vincent B. (Inventor)

    1994-01-01

    A device for measuring turbulence in high-speed flows is provided which includes a micro-sensor thin-film probe. The probe is formed from a single crystal of aluminum oxide having a 14 deg half-wedge shaped portion. The tip of the half-wedge is rounded and has a thin-film sensor attached along the stagnation line. The bottom surface of the half-wedge is tilted upward to relieve shock induced disturbances created by the curved tip of the half-wedge. The sensor is applied using a microphotolithography technique.

  16. Superconducting thin films on potassium tantalate substrates

    DOEpatents

    Feenstra, Roeland; Boatner, Lynn A.

    1992-01-01

    A superconductive system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

  17. Dynamics of liquid films and thin jets

    NASA Technical Reports Server (NTRS)

    Zak, M.

    1979-01-01

    The theory of liquid films and thin jets as one- and two-dimensional continuums is examined. The equations of motion have led to solutions for the characteristic speeds of wave propagation for the parameters characterizing the shape. The formal analogy with a compressible fluid indicates the possibility of shock wave generation in films and jets and the formal analogy to the theory of threads and membranes leads to the discovery of some new dynamic effects. The theory is illustrated by examples.

  18. Annealed CVD molybdenum thin film surface

    DOEpatents

    Carver, Gary E.; Seraphin, Bernhard O.

    1984-01-01

    Molybdenum thin films deposited by pyrolytic decomposition of Mo(CO).sub.6 attain, after anneal in a reducing atmosphere at temperatures greater than 700.degree. C., infrared reflectance values greater than reflectance of supersmooth bulk molybdenum. Black molybdenum films deposited under oxidizing conditions and annealed, when covered with an anti-reflecting coating, approach the ideal solar collector characteristic of visible light absorber and infrared energy reflector.

  19. Reactively sputtered thin film photovoltaic devices

    NASA Technical Reports Server (NTRS)

    Hsieh, E. J.

    1975-01-01

    The feasibility of a reactively sputtered thin film CdS - Cu2S solar cell is proven. Identification of the reactively sputtered Cu2S film is made by X-ray diffractometer and spectro-transmission measurements. Because of its simplicity, economical use of material, and high yield, the reactive sputtering process promises to be a low cost method for producing CdS - Cu2S solar cells.

  20. Thin films of SiO2 and hydroxyapatite on titanium deposited by spray pyrolysis.

    PubMed

    Jokanovic, V; Jokanovic, B; Izvonar, D; Dacic, B

    2008-05-01

    Wet spray pyrolysis of fine, well-dispersed a SiO2 sol was used for the deposition of thin films of silicon dioxide. The sol was obtained by hydrothermal precipitation of silicon acid from a solution at pH = 10. The morphology, roughness, phase composition, chemical homogeneity and the mechanism of the films were investigated by SEM, EDS and IR spectroscopy. The obtained results show a complete covering of the titanium substrate with SiO2 after 3 h of deposition. It was observed that the film thickness increased from 3 to 19 microm, the roughness of the film decreased from 12 to 3 microm, while the morphology of the deposit changed considerably. A hydroxyapatite film was prepared on the so-obtained SiO2 thin film by spray pyrolysis deposition and its morphology and phase composition were investigated.

  1. Thin Film Research. Volume 2

    DTIC Science & Technology

    2014-09-26

    143 ’a.’ 29 One of these methods, UV irradiation during deposition, is of particu- lar interest...because of studies of post-deposition UV irradiation and its effect upon film properties. Bradford et al. (1965) have irradi -0! ated SiO2 films with...effects of post-deposi- tion UV irradiation and noted the elimination of absorption in the 200- to 400-nm region. He has attributed this to the

  2. Oriented thin films of perylenetetracarboxylic diimide on frictiontransferred polymer films

    NASA Astrophysics Data System (ADS)

    Tanigaki, Nobutaka; Heck, Claire; Mizokuro, Toshiko

    Perylenetetracarboxylic diimide (PTCDI) is a promising material for application in organic electronics. In this study we report on the preparation of oriented thin films of PTCDI on the surface of oriented polymer substrates, which were prepared by friction transfer method. Two polymers, poly(tetrafluoroethylene) (PTFE) and poly(p-phenylene) (PPP) were used as the orienting substrate for PTCDI for comparison studies. Characterization by polarized UV-vis absorption shows that the orienting ability of PPP is larger than that of PTFE substrate. Furthermore, polarization-sensitive photoelectric conversion devices were fabricated by using the oriented PTCDI thin film on the PPP substrate.

  3. Workshop on thin film thermal conductivity measurements

    NASA Astrophysics Data System (ADS)

    Feldman, Albert; Balzaretti, Naira M.; Guenther, Arthur H.

    1998-04-01

    On a subject of considerable import to the laser-induced damage community, a two day workshop on the topic, Thin Film Thermal Conductivity Measurement was held as part of the 13th Symposium on Thermophysical Properties at the University of Colorado in Boulder CO, June 25 and 26, 1997. The Workshop consisted of 4 sessions of 17 oral presentations and two discussion sessions. Two related subjects of interest were covered; 1) methods and problems associated with measuring thermal conductivity ((kappa) ) of thin films, and 2) measuring and (kappa) of chemical vapor deposited (CVD) diamond. On the subject of thin film (kappa) measurement, several recently developed imaginative techniques were reviewed. However, several authors disagreed on how much (kappa) in a film differs from (kappa) in a bulk material of the same nominal composition. A subject of controversy was the definition of an interface. In the first discussion session, several questions were addressed, a principal one being, how do we know that the values of (kappa) we obtain are correct and is there a role for standards in thin film (kappa) measurement. The second discussion session was devoted to a round-robin interlaboratory comparison of (kappa) measurements on a set of CVD diamond specimens and several other specimens of lower thermal conductivity. Large interlaboratory differences obtained in an earlier round robin had been attributed to specimen inhomogeneity. Unfortunately, large differences were also observed in the second round robin even though the specimens were more homogenous. There was good consistency among the DC measurements, however, the AC measurements showed much greater variability. There was positive feedback from most of the attenders regarding the Workshop with nearly all respondents recommending another Workshop in three or fewer years. There was general recognition that thin film thermal conductivity measurements are important for predicting the resistance of optical coating

  4. Study of iron mononitride thin films

    NASA Astrophysics Data System (ADS)

    Tayal, Akhil; Gupta, Mukul; Phase, D. M.; Reddy, V. R.; Gupta, Ajay

    2014-04-01

    In this work we have studied the crystal structural and local ordering of iron and nitrogen in iron mononitride thin films prepared using dc magnetron sputtering at sputtering power of 100W and 500W. The films were sputtered using pure nitrogen to enhance the reactivity of nitrogen with iron. The x-ray diffraction (XRD), conversion electron Mössbauer spectroscopy (CEMS) and soft x-ray absorption spectroscopy (SXAS) studies shows that the film crystallizes in ZnS-type crystal structure.

  5. Study of iron mononitride thin films

    SciTech Connect

    Tayal, Akhil Gupta, Mukul Phase, D. M. Reddy, V. R. Gupta, Ajay

    2014-04-24

    In this work we have studied the crystal structural and local ordering of iron and nitrogen in iron mononitride thin films prepared using dc magnetron sputtering at sputtering power of 100W and 500W. The films were sputtered using pure nitrogen to enhance the reactivity of nitrogen with iron. The x-ray diffraction (XRD), conversion electron Mössbauer spectroscopy (CEMS) and soft x-ray absorption spectroscopy (SXAS) studies shows that the film crystallizes in ZnS-type crystal structure.

  6. Epitaxy of layered semiconductor thin films

    NASA Astrophysics Data System (ADS)

    Brahim Otsmane, L.; Emery, J. Y.; Jouanne, M.; Balkanski, M.

    1993-03-01

    Epilayers of InSe on InSe(00.1) and GaSe(00.1) have been grown by the molecular beam epitaxy (MBE) technique. Raman spectroscopy was used for a characterization of the structure and crystallinity in InSe/InSe(00.1) (homoepitaxy) and InSe/GaSe(00.1) (heteroepitaxy). The Raman spectra of the InSe thin films are identical to those of polytype γ-InSe. An activation of the E(LO) mode at 211 cm -1 is observed in these films here. Scanning electron microscopy (SEM) is also used to investigate surfaces of these films.

  7. Corrugational Instabilities of Thin Copolymer Films

    NASA Astrophysics Data System (ADS)

    Williams, D. R. M.

    1995-07-01

    We study the equilibrium configurations of thin films of diblock copolymers, in the strong segregation limit, resting on a flat surface. The top surface is free. Such films are geometrically frustrated and possess an inherent strain. Here we show how this strain induces an undulational instability in the film. The existence of this instability is very sensitive to the chain end distribution within the bilayers, and a macroscopic observation of this instability on a length scale of 1000 Å gives an indication of the chain end distribution on the scale of 5 Å.

  8. Growth modes of nanoparticle superlattice thin films.

    PubMed

    Mishra, D; Greving, D; Badini Confalonieri, G A; Perlich, J; Toperverg, B P; Zabel, H; Petracic, O

    2014-05-23

    We report on the fabrication and characterization of iron oxide nanoparticle thin film superlattices. The formation into different film morphologies is controlled by tuning the particle plus solvent-to-substrate interaction. It turns out that the wetting vs dewetting properties of the solvent before the self-assembly process during solvent evaporation plays a major role in determining the resulting film morphology. In addition to layerwise growth three-dimensional mesocrystalline growth is also evidenced. The understanding of the mechanisms ruling nanoparticle self-assembly represents an important step towards the fabrication of novel materials with tailored optical, magnetic or electrical transport properties.

  9. Ferrite thin films for microwave applications

    NASA Astrophysics Data System (ADS)

    Zaquine, I.; Benazizi, H.; Mage, J. C.

    1988-11-01

    This paper describes the preparation and the properties of thin (a few micron-thick) ferrite films for microwave applications. The films were deposited by RF sputtering from a single ferrite target on two different 4-in-thick substrates, silicon and alumina, both bare and metallized. The as-deposited films were amorphous, requiring careful annealing in oxygen atmosphere. The optimum annealing temperature was determined by obtaining the highest possible magnetization for each ferrite. The conditions of microwave measurements are described together with the results.

  10. Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films

    SciTech Connect

    Hellman, Frances

    1998-10-03

    OAK B204 Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films. The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and hTi-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials.

  11. Thin films for micro solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Beckel, D.; Bieberle-Hütter, A.; Harvey, A.; Infortuna, A.; Muecke, U. P.; Prestat, M.; Rupp, J. L. M.; Gauckler, L. J.

    Thin film deposition as applied to micro solid oxide fuel cell (μSOFC) fabrication is an emerging and highly active field of research that is attracting greater attention. This paper reviews thin film (thickness ≤1 μm) deposition techniques and components relevant to SOFCs including current research on nanocrystalline thin film electrolyte and thin-film-based model electrodes. Calculations showing the geometric limits of μSOFCs and first results towards fabrication of μSOFCs are also discussed.

  12. Microstructural characterization in nanocrystalline ceramic thin films

    NASA Astrophysics Data System (ADS)

    Kim, Hakkwan

    The primary objective of this research is to investigate the effects of process variables on microstructure in several fluoride and oxide thin films prepared by vapor deposition, in order to predict the properties and behaviors of nanocrystalline thin film materials. There are three distinct stages of this research. The first stage focuses on measuring of the porosity in polycrystalline thin films of a variety of fluorides as a function of the substrate temperature during deposition, and discussing the mechanism by which the porosity varies as a function of the process variables. We have measured the porosity in thin films of lithium fluoride (LiF), magnesium fluoride (MgF2), barium fluoride (BaF 2) and calcium fluoride (CaF2) using an atomic force microscope (AFM) and a quartz crystal thickness monitor. The porosity is very sensitive to the substrate temperature and decreases as the substrate temperature increases. Consistent behavior is observed among all of the materials in this study. The second stage is to understand the film microstructure including grain growth and texture development, because these factors are known to influence the behavior and stability of polycrystalline thin films. This study focuses on grain growth and texture development in polycrystalline lithium fluoride thin films using dark field (DF) transmission electron microscopy (TEM). It is demonstrated that we can isolate the size distribution of <111> surface normal grains from the overall size distribution, based on simple and plausible assumptions about the texture. The {111} texture formation and surface morphology were also observed by x-ray diffraction (XRD) and AFM, respectively. The grain size distributions become clearly bimodal as the annealing time increases, and we deduce that the short-time size distributions are also a sum of two overlapping peaks. The smaller grain-size peak in the distribution corresponds to the {111}-oriented grains which do not grow significantly, while

  13. Ferrite thin films for microwave applications

    SciTech Connect

    Zaquine, I.; Benazizi, H.; Mage, J.C.

    1988-11-15

    Production of ferrite thin films is the key to integration of microwave ferrite devices (circulators for phased array antennas, for instance). The interesting materials are the usual microwave ferrites: garnets, lithium ferrites, barium hexaferrites. The required thicknesses are a few tens of micrometers, and it will be important to achieve high deposition rates. Different substrates can be used: silicon and alumina both with and without metallization. The films were deposited by rf sputtering from a single target. The as-deposited films are amorphous and therefore require careful annealing in oxygen atmosphere. The sputtered films are a few micrometers thick on 4 in. substrates. The optimum annealing temperature was found by trying to obtain the highest possible magnetization for each ferrite. The precision on the value of magnetization is limited by the precision on the thickness of the film. We obtain magnetization values slightly lower than the target's. The ferromagnetic resonance linewidth was measured on toroids from 5 to 18 GHz.

  14. Semiconductor cooling by thin-film thermocouples

    NASA Technical Reports Server (NTRS)

    Tick, P. A.; Vilcans, J.

    1970-01-01

    Thin-film, metal alloy thermocouple junctions do not rectify, change circuit impedance only slightly, and require very little increase in space. Although they are less efficient cooling devices than semiconductor junctions, they may be applied to assist conventional cooling techniques for electronic devices.

  15. Thin film hydrous metal oxide catalysts

    DOEpatents

    Dosch, Robert G.; Stephens, Howard P.

    1995-01-01

    Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  16. Rechargeable Thin-film Lithium Batteries

    DOE R&D Accomplishments Database

    Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, Xiaohua

    1993-08-01

    Rechargeable thin film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6 {mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li TiS{sub 2}, Li V{sub 2}O{sub 5}, and Li Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin film lithium batteries.

  17. UV absorption control of thin film growth

    DOEpatents

    Biefeld, Robert M.; Hebner, Gregory A.; Killeen, Kevin P.; Zuhoski, Steven P.

    1991-01-01

    A system for monitoring and controlling the rate of growth of thin films in an atmosphere of reactant gases measures the UV absorbance of the atmosphere and calculates the partial pressure of the gases. The flow of reactant gases is controlled in response to the partial pressure.

  18. Thin-Film Solid Oxide Fuel Cells

    NASA Technical Reports Server (NTRS)

    Chen, Xin; Wu, Nai-Juan; Ignatiev, Alex

    2009-01-01

    The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

  19. Welding Wires To Thin Thermocouple Films

    NASA Technical Reports Server (NTRS)

    Holanda, Raymond; Kim, Walter S.; Danzey, Gerald A.; Pencil, Eric; Wadel, Mary

    1993-01-01

    Parallel-gap resistance welding yields joints surviving temperatures of about 1,000 degrees C. Much faster than thermocompression bonding. Also exceeds conductive-paste bonding and sputtering thin films through porous flame-sprayed insulation on prewelded lead wires. Introduces no foreign material into thermocouple circuit and does not require careful control of thickness of flame-sprayed material.

  20. Thin coatings and films hardness evaluation

    NASA Astrophysics Data System (ADS)

    Matyunin, V. M.; Marchenkov, A. Yu; Demidov, A. N.; Karimbekov, M. A.

    2016-10-01

    The existing thin coatings and films hardness evaluation methods based on indentation with pyramidal indenter on various scale levels are expounded. The impact of scale factor on hardness values is performed. The experimental verification of several existing hardness evaluation methods regarding the substrate hardness value and the “coating - substrate” composite hardness value is made.

  1. Negative resistance in an organic thin film

    SciTech Connect

    Ehara, S. ); Takagi, T. ); Yoshida, T.; Inaba, H.; Naito, H.; Okuda, M. )

    1992-08-20

    This paper reports that the negative resistance of the tunneling currents was observed in a semiconducting organic thin film on a graphite substrate by an STM (Scanning Tunneling Microscopy). This negative resistance may be understood by the theory of a molecular resonance tunneling effect.

  2. Preliminary Measurements of Thin Film Solar Cells

    NASA Image and Video Library

    1967-06-21

    George Mazaris, works with an assistant to obtain the preliminary measurements of cadmium sulfide thin-film solar cells being tested in the Space Environmental Chamber at the National Aeronautics and Space Administration (NASA) Lewis Research Center. Lewis’ Photovoltaic Fundamentals Section was investigating thin-film alternatives to the standard rigid and fragile solar cells. The cadmium sulfide semiconductors were placed in a light, metallized substrate that could be rolled or furled during launch. The main advantage of the thin-film solar cells was their reduced weight. Lewis researchers, however, were still working on improving the performance of the semiconductor. The new thin-film solar cells were tested in a space simulation chamber in the CW-6 test cell in the Engine Research Building. The chamber created a simulated altitude of 200 miles. Sunlight was simulated by a 5000-watt xenon light. Some two dozen cells were exposed to 15 minutes of light followed by 15 minutes of darkness to test their durability in the constantly changing illumination of Earth orbit. This photograph was taken for use in a NASA recruiting publication.

  3. Welding Wires To Thin Thermocouple Films

    NASA Technical Reports Server (NTRS)

    Holanda, Raymond; Kim, Walter S.; Danzey, Gerald A.; Pencil, Eric; Wadel, Mary

    1993-01-01

    Parallel-gap resistance welding yields joints surviving temperatures of about 1,000 degrees C. Much faster than thermocompression bonding. Also exceeds conductive-paste bonding and sputtering thin films through porous flame-sprayed insulation on prewelded lead wires. Introduces no foreign material into thermocouple circuit and does not require careful control of thickness of flame-sprayed material.

  4. Center for Thin Film Studies.

    DTIC Science & Technology

    1987-11-15

    dielectrics. In the interests of rectifying this neglect. Chang-Kwon Hwangbo began an investigation of the LAD of Ag . In general. Ag films are deposited...a facility. Plans for the coming Year Ion-Assisted Deposition ol Oides, Nitrides, Oxpoerides, Fluorides. and Metali lAD will continue to be the area...Thermally Evaporated Ag Films" at the 1987 Annual Meeting of the Optical Society of America. Rochester, 5’NY, October 19-23. R. B. Sargent and H. A

  5. Growth induced magnetic anisotropy in crystalline and amorphous thin films

    SciTech Connect

    Hellman, F.

    1998-07-20

    The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and Ni-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials. A brief summary of work done in each area is given.

  6. Gravitationally driven drainage of thin films

    NASA Astrophysics Data System (ADS)

    Naire, Shailesh

    In this thesis we develop theory for an experiment done by Snow and coworkers at Dow Corning that involves a vertically-oriented, thinned polyurethane film with silicone surfactant, draining under gravity. We present the mathematical formulation for a 1+1- and 2+1-dimensional model to study the evolution of a vertically-oriented thin liquid film draining under gravity when there is an insoluble surfactant with finite surface viscosity on its free surface. This formulation has all the ingredients that include: surface tension, gravity, surface viscosity, the Marangoni effect, convective and diffusive surfactant transport; essential to describe the behavior of a vertical draining film with surfactant. We study a hierarchy of mathematical models with increasing complexity starting with the flat film model where gravity balances viscous shear and surface tension is neglected, this is generalized to include surface tension. We further generalize to incorporate variable surface viscosity and more complicated constitutive laws for surface tension as a function of surfactant concentration. Lubrication theory is employed to derive three coupled nonlinear partial differential equations (PDEs) describing the free surface shape, a component of surface velocity and the surfactant transport at leading order. A large surface viscosity limit recovers the tangentially-immobile model; for small surface viscosity, the film is mobile. Transition from a mobile to an immobile film is observed for intermediate values of surface viscosity and Marangoni number. The above models reproduce a number of features observed in experiments, these include film shapes and thinning rates which can be correlated to experiment. The 2+1-dimensional model for simplified surface properties has also been studied. Numerical experiments were performed to understand the stability of the system to perturbations across the film. An instability was seen in the mobile case; this was caused by a competition

  7. Thin film preparation of semiconducting iron pyrite

    NASA Astrophysics Data System (ADS)

    Smestad, Greg P.; Ennaoui, Ahmed; Fiechter, Sebastian; Hofmann, Wolfgang; Tributsch, Helmut; Kautek, Wolfgang

    1990-08-01

    Pyrite (Fe52) has been investigated as a promising new absorber material for thin film solar cell applications because of its high optical absorption coefficient of 1OL cm1, and its bandgap of 0.9 to 1.0 eV. Thin layers have been prepared by Metal Organic Chemical Vapor Deposition, MOCVD, Chemical Spray Pyrolysis, CSP, Chemical Vapor Transport, CVT, and Sulfurization of Iron Oxide films, 510. It is postulated that for the material FeS2, if x is not zero, a high point defect concentration results from replacing 2 dipoles by single S atoms. This causes the observed photovoltages and solar conversion efficiencies to be lower than expected. Using the Fe-O-S ternary phase diagram and the related activity plots, a thermodynamic understanding is formulated for the resulting composition of each of these types of films. It is found that by operating in the oxide portion of the phase diagram, the resulting oxidation state favors pyrite formation over FeS. By proper orientation of the grains relative to the film surface, and by control of pinholes and stoichiometry, an efficient thin film photovolatic solar cell material could be achieved.

  8. Enhanced poly gate critical dimension control by using a SiOxNy ARC film

    NASA Astrophysics Data System (ADS)

    Bencher, Christopher; Chu, Tony; Tan, Way Tat; Zou, Gang; Lin, Qunying; Yi, Xu; Dong, Wang Xu; Wen, Ma Wei

    1997-08-01

    In this study, a silicon oxy-nitride (SiOxNy) film deposited using the plasma enhanced chemical vapor deposition method has been developed and applied to improve poly-gate level resist line CD control. The desired optical properties of a SiOxNy anti-reflective coating (ARC) film and its optimum thickness were targeted by using a photolithography simulator. A process matrix study has led to the identification of an optimized SiOxNy film Dielectric ARC deposition process for i-line photolithography applications. Using the optimized SiOxNy film as the ARC, significant improvements, compared to the standard and top ARC techniques, have been achieved, including 5 times reduction in does to clear swing ratio and complete elimination of reflection induced photoresist notching and necking effects. Moreover, a 2500 wafer marathon run demonstrated that the refractive index, extinction coefficient and thickness of this film can be controlled to +/- 0.04, +/- 0.03 and +/- 12A, respectively and that the particle performance is excellent.

  9. Fabrication of Epitaxial Fe3O4 Film on a Si(111) Substrate.

    PubMed

    Takahashi, Nozomi; Huminiuc, Teodor; Yamamoto, Yuta; Yanase, Takashi; Shimada, Toshihiro; Hirohata, Atsufumi; Nagahama, Taro

    2017-08-01

    The application of magnetic oxides in spintronics has recently attracted much attention. The epitaxial growth of magnetic oxide on Si could be the first step of new functional spintronics devices with semiconductors. However, epitaxial spinel ferrite films are generally grown on oxide substrates, not on semiconductors. To combine oxide spintronics and semiconductor technology, we fabricated Fe3O4 films through epitaxial growth on a Si(111) substrate by inserting a γ-Al2O3 buffer layer. Both of γ-Al2O3 and Fe3O4 layer grew epitaxially on Si and the films exhibited the magnetic and electronic properties as same as bulk. Furthermore, we also found the buffer layer dependence of crystal structure of Fe3O4 by X-ray diffraction and high-resolution transmission electron microscope. The Fe3O4 films on an amorphous-Al2O3 buffer layer grown at room temperature grew uniaxially in the (111) orientation and had a textured structure in the plane. When Fe3O4 was deposited on Si(111) directly, the poly-crystal Fe3O4 films were obtained due to SiOx on Si substrate. The epitaxial Fe3O4 layer on Si substrates enable us the integration of highly functional spintoronic devices with Si technology.

  10. Thin-film nanocapacitor and its characterization

    NASA Astrophysics Data System (ADS)

    Hunter, David N.; Pickering, Shawn L.; Jia, Dongdong

    2007-03-01

    An undergraduate thin-film nanotechnology laboratory was designed. Nanocapacitors were fabricated on silicon substrates by sputter deposition. A mask was designed to form the shape of the capacitor and its electrodes. Thin metal layers of Au with a 80 nm thickness were deposited and used as two infinitely large parallel plates for a capacitor. TiO2 with a 400 nm thickness and a high dielectric constant (ɛr ~ 100) was coated between the gold metal layers by using sol gel and dip-coating techniques. A RC circuit was built to measure the capacitance of the nanocapacitors. Some fundamental thin-film characterization equipment such as a four-point probe, a step profiler and an atomic force microscope were used in this laboratory to characterize the devices' morphology and electrical properties.

  11. Thin Film Research. Volume 1

    DTIC Science & Technology

    1985-05-30

    73 1. Antimony trioxide .. .. . .. ... ... . ............ 73 2. Potassium hexafluorozirconate ................... 73 3...silicon monoxide (SiO), zinc sulfide (ZnS), magnesium fluoride (MgF 2 ), and potassium hexafluorozirconate [2KF(ZrF,4J. Brief results follow: (1) SiO...somewhat higher packing density for the bombarded films. 2. Potassium hexafluorozirconate The structure tended toward a more- amorphous form under electron

  12. Nanoindentation of GaSe thin films

    NASA Astrophysics Data System (ADS)

    Jian, Sheng-Rui; Ku, Shin-An; Luo, Chih-Wei; Juang, Jenh-Yih

    2012-07-01

    The structural and nanomechanical properties of GaSe thin films were investigated by means of X-ray diffraction (XRD) and nanoindentation techniques. The GaSe thin films were deposited on Si(111) substrates by pulsed laser deposition. XRD patterns reveal only the pure (000 l)-oriented reflections originating from the hexagonal GaSe phase and no trace of any impurity or additional phases. Nanoindentation results exhibit discontinuities (so-called multiple `pop-in' events) in the loading segments of the load-displacement curves, and the continuous stiffness measurements indicate that the hardness and Young's modulus of the hexagonal GaSe films are 1.8 ± 0.2 and 65.8 ± 5.6 GPa, respectively.

  13. Thin film morphology of organic electronic materials

    NASA Astrophysics Data System (ADS)

    Hudson, S. D.; Kline, R. J.; Delongchamp, D. M.; Jurchescu, O. D.; Gundlach, D. J.; Richter, L. J.

    2009-03-01

    The crystal orientation and morphology of a polythiophene (pBTTT) and an anthradithiophene (diF-TEADT, a pentacene analog) in thin films have been explored by TEM, SEM, AFM, GISAXD, NEXAFS, polarized FTIR and ellipsometry. The orientation has a striking influence on the performance of thin film transistors. We show that solution casting and annealing conditions have a significant effect on the morphology of pBTTT. Correlations between film surface step morphology and crystal orientation are determined. Interfacial interactions with the substrate (gold, silica, or fluorinated sam) govern the crystal orientation and crystal aggregate morphology of diF-TESADT. Depending on this orientation, the carrier mobility spans from approximately 0.001 cm^2/Vs to 0.4 cm^2/Vs. Epitaxial relationships within crystal aggregates are observed.

  14. Nanoindentation of GaSe thin films

    PubMed Central

    2012-01-01

    The structural and nanomechanical properties of GaSe thin films were investigated by means of X-ray diffraction (XRD) and nanoindentation techniques. The GaSe thin films were deposited on Si(111) substrates by pulsed laser deposition. XRD patterns reveal only the pure (000 l)-oriented reflections originating from the hexagonal GaSe phase and no trace of any impurity or additional phases. Nanoindentation results exhibit discontinuities (so-called multiple ‘pop-in’ events) in the loading segments of the load–displacement curves, and the continuous stiffness measurements indicate that the hardness and Young’s modulus of the hexagonal GaSe films are 1.8 ± 0.2 and 65.8 ± 5.6 GPa, respectively. PMID:22804961

  15. MISSE 5 Thin Films Space Exposure Experiment

    NASA Technical Reports Server (NTRS)

    Harvey, Gale A.; Kinard, William H.; Jones, James L.

    2007-01-01

    The Materials International Space Station Experiment (MISSE) is a set of space exposure experiments using the International Space Station (ISS) as the flight platform. MISSE 5 is a co-operative endeavor by NASA-LaRC, United Stated Naval Academy, Naval Center for Space Technology (NCST), NASA-GRC, NASA-MSFC, Boeing, AZ Technology, MURE, and Team Cooperative. The primary experiment is performance measurement and monitoring of high performance solar cells for U.S. Navy research and development. A secondary experiment is the telemetry of this data to ground stations. A third experiment is the measurement of low-Earth-orbit (LEO) low-Sun-exposure space effects on thin film materials. Thin films can provide extremely efficacious thermal control, designation, and propulsion functions in space to name a few applications. Solar ultraviolet radiation and atomic oxygen are major degradation mechanisms in LEO. This paper is an engineering report of the MISSE 5 thm films 13 months space exposure experiment.

  16. Silane and germane plasma diagnostics for depositing photosensitive a-SiGe:H films

    NASA Technical Reports Server (NTRS)

    Shing, Y. H.; Perry, J. W.; Allevato, C. E.

    1988-01-01

    Highly photosensitive a-SiGe:H films with a light-to-dark conductivity ratio of 8 x 103 and an optical bandgap of 1.40 eV have been produced by RF glow discharge using hydrogen dilution of SiH4 and GeH4 mixed gas plasma. The critical role of hydrogen dilution in GeH4 containing plasmas is to suppress the gas-phase polymerization and promote the incorporation of Ge into the film. It is observed that inelastic laser light scattering of the RF plasma is a sensitive method for monitoring the onset of the gas-phase polymerization. In situ coherent anti-Stokes Raman spectroscopy measurements have shown that the dissociation rate of GeH4 is a factor of three larger than that of SiH4.

  17. Scalable simple liquid deposition techniques for the enhancement of light absorption in thin films: Distributed Bragg reflectors coupled to 1D nanoimprinted textures

    NASA Astrophysics Data System (ADS)

    Brudieu, B.; Gozhyk, I.; Clements, W. R.; Mazoyer, S.; Gacoin, T.; Teisseire, J.

    2017-08-01

    Light trapping within a light absorbing medium is a key to highly efficient thin film solar cells. We propose a large-scale procedure based on materials with low absorption for the fabrication of combined Distributed Bragg Reflector (DBR) and grating light trapping structures. Using Rigorous Coupled Wave Analysis (RCWA) numerical simulations we designed a combined DBR and 1D grating structure allowing to significantly improve the absorption in a aSi:H film as thin as 100 nm. The optimized light trapping structure was fabricated. The enhancement of light absorption in thin aSi:H film was experimentally proven and discussed quantitatively with respect to the theoretical expectations.

  18. Electrolyte and Electrode Passivation for Thin Film Batteries

    NASA Technical Reports Server (NTRS)

    West, W.; Whitacre, J.; Ratnakumar, B.; Brandon, E.; Blosiu, J.; Surampudi, S.

    2000-01-01

    Passivation films for thin film batteries have been prepared and the conductivity and voltage stability window have been measured. Thin films of Li2CO3 have a large voltage stability window of 4.8V, which facilitates the use of this film as a passivation at both the lithium anode-electrolyte interface at high cathodic potentials.

  19. A magnetron sputtering system for the preparation of patterned thin films and in situ thin film electrical resistance measurements

    SciTech Connect

    Arnalds, U. B.; Agustsson, J. S.; Ingason, A. S.; Eriksson, A. K.; Gylfason, K. B.; Gudmundsson, J. T.; Olafsson, S.

    2007-10-15

    We describe a versatile three gun magnetron sputtering system with a custom made sample holder for in situ electrical resistance measurements, both during film growth and ambient changes on film electrical properties. The sample holder allows for the preparation of patterned thin film structures, using up to five different shadow masks without breaking vacuum. We show how the system is used to monitor the electrical resistance of thin metallic films during growth and to study the thermodynamics of hydrogen uptake in metallic thin films. Furthermore, we demonstrate the growth of thin film capacitors, where patterned films are created using shadow masks.

  20. Thin blend films of cellulose and polyacrylonitrile

    NASA Astrophysics Data System (ADS)

    Lu, Rui; Zhang, Xin; Mao, Yimin; Briber, Robert; Wang, Howard

    Cellulose is the most abundant renewable, biocompatible and biodegradable natural polymer. Cellulose exhibits excellent chemical and mechanical stability, which makes it useful for applications such as construction, filtration, bio-scaffolding and packaging. To further expand the potential applications of cellulose materials, their alloying with synthetic polymers has been investigated. In this study, thin films of cotton linter cellulose (CLC) and polyacrylonitrile (PAN) blends with various compositions spanning the entire range from neat CLC to neat PAN were spun cast on silicon wafers from common solutions in dimethyl sulfoxide / ionic liquid mixtures. The morphologies of thin films were characterized using optical microscopy, atomic force microscopy, scanning electron microscopy and X-ray reflectivity. Morphologies of as-cast films are highly sensitive to the film preparation conditions; they vary from featureless smooth films to self-organized ordered nano-patterns to hierarchical structures spanning over multiple length scales from nanometers to tens of microns. By selectively removing the PAN-rich phase, the structures of blend films were studied to gain insights in their very high stability in hot water, acid and salt solutions.

  1. Thin-film semiconductor rectifier has improved properties

    NASA Technical Reports Server (NTRS)

    1966-01-01

    Cadmium selenide-zinc selenide film is used as a thin film semiconductor rectifier. The film is vapor-deposited in a controlled concentration gradient into a glass substrate to form the required junctions between vapor-deposited gold electrodes.

  2. Thin film diamond microstructure applications

    NASA Technical Reports Server (NTRS)

    Roppel, T.; Ellis, C.; Ramesham, R.; Jaworske, D.; Baginski, M. E.; Lee, S. Y.

    1991-01-01

    Selective deposition and abrasion, as well as etching in atomic oxygen or reduced-pressure air, have been used to prepare patterned polycrystalline diamond films which, on further processing by anisotropic Si etching, yield the microstructures of such devices as flow sensors and accelerometers. Both types of sensor have been experimentally tested in the respective functions of hot-wire anemometer and both single- and double-hinged accelerometer.

  3. Thin Film Research. Volume 1

    DTIC Science & Technology

    1985-05-30

    isotherm expected for nonwetting adsorbate-adsorbent systems. 8 Type I depicts monolayer adsorption. Type II is very common in the case of physical...5.11 show the isothermal growth rate as a function of relative humidity. The shape can be classified as a type IV adsorption isotherm that corresponds...by following the fringes generated by interference effects in the growing film. The Balzers 760 evaporation system was supplied with both types of

  4. Doping in zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Yang, Zheng

    Doping in zinc oxide (ZnO) thin films is discussed in this dissertation. The optimizations of undoped ZnO thin film growth using molecular-beam epitaxy (MBE) are discussed. The effect of the oxygen ECR plasma power on the growth rate, structural, electrical, and optical properties of the ZnO thin films were studied. It was found that larger ECR power leads to higher growth rate, better crystallinity, lower electron carrier concentration, larger resistivity, and smaller density of non-radiative luminescence centers in the ZnO thin films. Low-temperature photoluminescence (PL) measurements were carried out in undoped and Ga-doped ZnO thin films grown by molecular-beam epitaxy. As the carrier concentration increases from 1.8 x 1018 to 1.8 x 1020 cm-3, the dominant PL line at 9 K changes from I1 (3.368--3.371 eV), to IDA (3.317--3.321 eV), and finally to I8 (3.359 eV). The dominance of I1, due to ionized-donor bound excitons, is unexpected in n-type samples, but is shown to be consistent with the temperature-dependent Hall fitting results. We also show that IDA has characteristics of a donor-acceptor-pair transition, and use a detailed, quantitative analysis to argue that it arises from GaZn donors paired with Zn-vacancy (VZn) acceptors. In this analysis, the GaZn0/+ energy is well-known from two-electron satellite transitions, and the VZn0/- energy is taken from a recent theoretical calculation. Typical behaviors of Sb-doped p-type ZnO are presented. The Sb doping mechanisms and preference in ZnO are discussed. Diluted magnetic semiconducting ZnO:Co thin films with above room-temperature TC were prepared. Transmission electron microscopy and x-ray diffraction studies indicate the ZnO:Co thin films are free of secondary phases. The magnetization of the ZnO:Co thin films shows a free electron carrier concentration dependence, which increases dramatically when the free electron carrier concentration exceeds ˜1019 cm -3, indicating a carrier-mediated mechanism for

  5. Thin film bismuth iron oxides useful for piezoelectric devices

    DOEpatents

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  6. Ferroelectric Thin Films for Electronic Applications

    NASA Astrophysics Data System (ADS)

    Udayakumar, K. R.

    This study yokes together the feasibility of a family of PbO-based perovskite-structured ferroelectric thin films as functional elements in nonvolatile random access memories (NVRAMs), in high capacity dynamic RAMs, and in a new class of flexure wave piezoelectric ultrasonic micromotors. The dielectric and ferroelectric properties of lead zirconate titanate (PZT) thin films were dependent on thickness; at saturation, the films were characterized by a relative permittivity of 1300, remanent polarization of 36 muC/cm^2 and breakdown strength of over 1 MV/cm. The temperature dependence of permittivity revealed an anomalous behavior with the film annealing temperature. Based on the ferroelectric properties in the bulk, thin films in the lead zirconate -lead zinc niobate (PZ-PZN) solid solution system at 8-12% PZN, examined as alternate compositions for ferroelectric memories, feature switched charges of 4-14 mu C/cm^2, with coercive and saturation voltages less than the semiconductor operating voltage of 5 V. Rapid thermally annealed lead magnesium niobate titanate films were privy to weak signal dielectric permittivity of 2900, remanent polarization of 11 muC/cm^2, and a storage density of 210 fC/mum^2 at 5 V; the films merit consideration for potential applications in ultra large scale integrated circuits as also ferroelectric nonvolatile RAMs. The high breakdown strength and relative permittivity of the PZT films entail maximum stored energy density 10^3 times larger than a silicon electrostatic motor. The longitudinal piezoelectric strain coefficient d_{33 } was measured to be 220 pC/N at a dc bias of 75 kV/cm. The transverse piezoelectric strain coefficient d_{31} bore a nonlinear relationship with the electric field; at 200 kV/cm, d _{31} was -88 pC/N. The development of the piezoelectric ultrasonic micromotors from the PZT thin films, and the architecture of the stator structures are described. Nonoptimized prototype micromotors show rotational velocities of 100

  7. Physical Vapor Deposition of Thin Films

    NASA Astrophysics Data System (ADS)

    Mahan, John E.

    2000-01-01

    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  8. Polycrystalline thin film materials and devices

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. . Inst. of Energy Conversion)

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  9. Adhesion assessment of copper thin films

    SciTech Connect

    Kriese, M.D.; Gerberich, W.W.; Moody, N.R.

    1997-06-01

    Nano-indentation testing has been used to quantitatively assess the adhesion of thin copper films, sputtered to thicknesses of 150 nm to 1500 nm. Copper films of low residual stress were deposited via RF diode cathode sputtering onto SiO{sub 2}/Si substrates. Overlayers of DC magnetron sputtered tungsten, 850 nm thick with high residual stress, were additionally used to provide a driving force for delamination. All films tested exhibited buckle-driven delamination, from which the interfacial toughness was estimated to be 0.2 - 2 J/m{sup 2}, which is comparable to the thermodynamic work of adhesion. The use of an overlayer requires extensions of existing models, but otherwise does not change the interfacial adhesion, allowing measurements of films that would not otherwise delaminate.

  10. Effect of DC bias on microstructural rearrangement of a-SiN:H films on PET substrate

    NASA Astrophysics Data System (ADS)

    Swain, Bibhu P.; Swain, Bhabani S.; Hwang, Nong M.

    2009-09-01

    Hydrogenated amorphous silicon nitride (a-SiN:H) films were deposited on flexible polyethylene terephthalate substrates at temperature as low as 100 °C by hot-wire chemical vapor deposition using SiH 4, H 2 and NH 3 precursors. Field emission scanning emission microscopy, Raman spectroscopy, Fourier transform infrared spectroscopy and small angle X-ray scattering were employed to study structural and microstructural properties of a-SiN:H films. The rms surface roughness increased with increase of positive bias to substrate. Intermediate range order, porosity and interface inhomogeneity in amorphous of a-SiN:H films evaluated by acoustic and optical phonon of silicon network, Guinier plot and correlated length from Raman and SAXS characterizations. The fractal behavior of a-SiN:H domains approached the perfect symmetry and the intermediate range order of a-SiN:H films deteriorate with increase of the positive substrate bias. Both correlation length and void size of the a-SiN:H amorphous domain increased with increase of the substrate bias from 0 to +200 V.

  11. Cathodoluminescence degradation of PLD thin films

    NASA Astrophysics Data System (ADS)

    Swart, H. C.; Coetsee, E.; Terblans, J. J.; Ntwaeaborwa, O. M.; Nsimama, P. D.; Dejene, F. B.; Dolo, J. J.

    2010-12-01

    The cathodoluminescence (CL) intensities of Y2SiO5:Ce3+, Gd2O2S:Tb3+ and SrAl2O4:Eu2+,Dy3+ phosphor thin films that were grown by pulsed laser deposition (PLD) were investigated for possible application in low voltage field emission displays (FEDs) and other infrastructure applications. Several process parameters (background gas, laser fluence, base pressure, substrate temperature, etc.) were changed during the deposition of the thin films. Atomic force microscopy (AFM) was used to determine the surface roughness and particle size of the different films. The layers consist of agglomerated nanoparticle structures. Samples with good light emission were selected for the electron degradation studies. Auger electron spectroscopy (AES) and CL spectroscopy were used to monitor changes in the surface chemical composition and luminous efficiency of the thin films. AES and CL spectroscopy were done with 2 keV energy electrons. Measurements were done at 1×10-6 Torr oxygen pressure. The formation of different oxide layers during electron bombardment was confirmed with X-ray photoelectron spectroscopy (XPS). New non-luminescent layers that formed during electron bombardment were responsible for the degradation in light intensity. The adventitious C was removed from the surface in all three cases as volatile gas species, which is consistent with the electron stimulated surface chemical reaction (ESSCR) model. For Y2SiO5:Ce3+ a luminescent SiO2 layer formed during the electron bombardment. Gd2O3 and SrO thin films formed on the surfaces of Gd2O2S:Tb3+ and SrAl2O4:Eu2+,Dy3+, respectively, due to ESSCRs.

  12. Investigation of electrodeposited cuprous oxide thin films

    NASA Astrophysics Data System (ADS)

    Mortensen, Emma L.

    This dissertation focuses on improvements to electrodeposited cuprous oxide as a candidate for the absorber layer for a thin film solar cell that could be integrated into a mechanical solar cell stack. Cuprous oxide (Cu2O) is an earth abundant material that has a bandgap of 2 eV with absorption coefficients around 102-106 cm-1. This bandgap is not optimized for use as a single-junction solar cell, but could be ideal for use in a tandem solar cell device. The theoretical efficiency of a material with a bandgap of 2.0 eV is 20%. The greatest actual efficiency that has been achieved for a Cu2O solar cell is only 8.1%. For the present work the primary focus has been on improving the microstructure of the absorber layer film. The Cu2O films were fabricated using electrodeposition. A seeding layer was developed using gold (Au); which was manipulated into nano-islands and used as the substrate for the Cu2O electrodeposition. The films were characterized and compared to determine the growth mechanism of each film using scanning electron microscopy (SEM). X-ray diffraction (XRD) was used to establish and compare the chemical phases that were present in each of the films. The crystal structure of the Cu2O film grown on gold was explored using transmission electron microscopy (TEM), and this helped confirm the effect that the gold had on the growth of Cu2O. The Tauc method was then used to determine the bandgap of the films of Cu2O grown on both substrates and this showed that the Au based Cu2O film was a superior film. Electrical tests were also completed using a solar simulator and this established that the film grown on gold exhibited photoconductivity that was not seen on the film without gold. In addition, for this thesis, a method for depositing an n-type Cu2O film, based on a Cu-metal solution-boiling process, was investigated. Three forms of copper were tested: a sheet of copper, electrodeposited copper, and sputtered copper. The chemical phases were observed using

  13. Photonic crystals and optical mode engineering for thin film photovoltaics.

    PubMed

    Gomard, Guillaume; Peretti, Romain; Drouard, Emmanuel; Meng, Xianqin; Seassal, Christian

    2013-05-06

    In this paper, we present the design, analysis, and experimental results on the integration of 2D photonic crystals in thin film photovoltaic solar cells based on hydrogenated amorphous silicon. We introduce an analytical approach based on time domain coupled mode theory to investigate the impact of the photon lifetime and anisotropy of the optical resonances on the absorption efficiency. Specific design rules are derived from this analysis. We also show that, due to the specific properties of the photonic crystal resonances, the angular acceptance of such solar cells is particularly high. Rigorous Coupled Wave Analysis simulations show that the absorption in the a-Si:H active layers, integrated from 300 to 750 nm, is only decreased from 65.7% to 60% while the incidence angle is increased from 0 to 55°. Experimental results confirm the stability of the incident light absorption in the patterned stack, for angles of incidence up to 50°.

  14. Design of Gradient Index Optical Thin Films

    NASA Astrophysics Data System (ADS)

    Druessel, Jeffrey J.

    Gradient index thin films provide greater flexibility for the design of optical coatings than the more conventional "layer" films. In addition, gradient index films have higher damage thresholds and better adhesion properties. In this dissertation I present an enhancement to the existing inverse Fourier transform gradient index design method, and develop a new optimal design method for gradient index films using a generalized Fourier series approach. The inverse Fourier transform method is modified to include use of the phase of the index profile as a variable in rugate filter design. Use of an optimal phase function in Fourier-based filter designs reduces the product of index contrast and thickness for desired reflectance spectra. The shape of the reflectance spectrum is recovered with greater fidelity by suppression of Gibbs oscillations and shifting of side-lobes into desired wavelength regions. A new method of gradient index thin film design using generalized Fourier series extends the domain of problems for which gradient index solutions can be found. The method is analogous to existing techniques for layer based coating design, but adds the flexibility of gradient index films. A subset of the coefficients of a generalized Fourier series representation of the gradient index of refraction profile are used as variables in a nonlinear constrained optimization formulation. The optimal values of the design coefficients are determined using a sequential quadratic programming algorithm. This method is particularly well suited for the design of coatings for laser applications, where only a few widely separated wavelength requirements exist. The generalized Fourier series method is extended to determine the minimum film thickness needed, as well as the index of refraction profile for the optimal film.

  15. Thin Film...Large Payoff

    NASA Technical Reports Server (NTRS)

    1998-01-01

    SRS Technologies is currently the only company licensed by Langley Research Center to produce colorless polyimides. They currently produce two polyimides, the LaRC-CP1 and LaRC-CP2 developed by Langley Research Center. These polyimides offer many advantages over other commercially available materials including excellent thermal stability, radiation resistance, solubility, and transparency. The SRS polyimides can be used in laminates, films, molded parts, and stock shapes. The polyimide technology has also helped the company further their development of solar arrays.

  16. A study of reactive plasma deposited thin films

    NASA Technical Reports Server (NTRS)

    Gilchrist, J.; Williams, E.

    1986-01-01

    A state-of-the-art research laboratory was established to grow and characterize amorphous thin films that are useful in semi-conductor devices. Two film systems, nitride films and silicon dioxide films were studied. Over seventy deposition runs for nitride films were made. The films were deposited on silicon substrate using plasma enhanced chemical vapor deposition. It was found that the uniformity of the films were affected by the location of the film on the platen.

  17. Deposition and characterization of CuInS2 thin films deposited over copper thin films

    NASA Astrophysics Data System (ADS)

    Thomas, Titu; Kumar, K. Rajeev; Kartha, C. Sudha; Vijayakumar, K. P.

    2015-06-01

    Simple, cost effective and versatile spray pyrolysis method is effectively combined with vacuum evaporation for the deposition of CuIns2 thin films for photovoltaic applications. In the present study In2s3 was spray deposited over vacuum evaporated Cu thin films and Cu was allowed to diffuse in to the In2S3 layer to form CuInS2. To analyse the dependence of precursor volume on the formation of CuInS2 films structural, electrical and morphological analzes are carried out. Successful deposition of CuInS2thin films with good crystallinity and morphology with considerably low resistivity is reported in this paper.

  18. Elastic Properties of Molecular Glass Thin Films

    NASA Astrophysics Data System (ADS)

    Torres, Jessica

    2011-12-01

    This dissertation provides a fundamental understanding of the impact of bulk polymer properties on the nanometer length scale modulus. The elastic modulus of amorphous organic thin films is examined using a surface wrinkling technique. Potential correlations between thin film behavior and intrinsic properties such as flexibility and chain length are explored. Thermal properties, glass transition temperature (Tg) and the coefficient of thermal expansion, are examined along with the moduli of these thin films. It is found that the nanometer length scale behavior of flexible polymers correlates to its bulk Tg and not the polymers intrinsic size. It is also found that decreases in the modulus of ultrathin flexible films is not correlated with the observed Tg decrease in films of the same thickness. Techniques to circumvent reductions from bulk modulus were also demonstrated. However, as chain flexibility is reduced the modulus becomes thickness independent down to 10 nm. Similarly for this series minor reductions in T g were obtained. To further understand the impact of the intrinsic size and processing conditions; this wrinkling instability was also utilized to determine the modulus of small organic electronic materials at various deposition conditions. Lastly, this wrinkling instability is exploited for development of poly furfuryl alcohol wrinkles. A two-step wrinkling process is developed via an acid catalyzed polymerization of a drop cast solution of furfuryl alcohol and photo acid generator. The ability to control the surface topology and tune the wrinkle wavelength with processing parameters such as substrate temperature and photo acid generator concentration is also demonstrated. Well-ordered linear, circular, and curvilinear patterns are also obtained by selective ultraviolet exposure and polymerization of the furfuryl alcohol film. As a carbon precursor a thorough understanding of this wrinkling instability can have applications in a wide variety of

  19. A Multilayered Thin Film Insulator for Harsh Environments

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D.; Fralick, Gustave C.; Blaha, Charles A.; Busfield, A. Rachel; Thomas, Valarie D.

    2002-01-01

    The status of work to develop a reliable high temperature dielectric thin film for use with thin film sensors is presented. The use of thin films to electrically insulate thin film sensors on engine components minimizes the intrusiveness of the sensor and allows a more accurate measurement of the environment. A variety of insulating films were investigated for preventing electrical shorting caused by insulator failure between the sensor and the component. By alternating layers of sputtered high temperature ceramics, a sequence of insulating layers was devised that prevents pinholes from forming completely through the insulator and maintains high electrical resistivity at high temperatures. The major technical challenge remaining is to optimize the fabrication of the insulator with respect to composition to achieve a reliable high temperature insulating film. Data from the testing of various potentially insulating thin film systems is presented and their application to thin film sensors is also discussed.

  20. Electrohydrodynamic instabilities in thin liquid trilayer films

    DOE PAGES

    Roberts, Scott A.; Kumar, Satish

    2010-12-09

    Experiments by Dickey and Leach show that novel pillar shapes can be generated from electrohydrodynamic instabilities at the interfaces of thin polymer/polymer/air trilayer films. In this paper, we use linear stability analysis to investigate the effect of free charge and ac electric fields on the stability of trilayer systems. Our work is also motivated by our recent theoretical study which demonstrates how ac electric fields can be used to increase control over the pillar formation process in thin liquid bilayer films. For perfect dielectric films, the effect of an AC electric field can be understood by considering an equivalent DCmore » field. Leaky dielectric films yield pillar configurations that are drastically different from perfect dielectric films, and AC fields can be used to control the location of free charge within the trilayer system. This can alter the pillar instability modes and generate smaller diameter pillars when conductivities are mismatched. The results presented may be of interest for the creation of complex topographical patterns on polymer coatings and in microelectronics.« less

  1. Electrohydrodynamic instabilities in thin liquid trilayer films

    SciTech Connect

    Roberts, Scott A.; Kumar, Satish

    2010-12-09

    Experiments by Dickey and Leach show that novel pillar shapes can be generated from electrohydrodynamic instabilities at the interfaces of thin polymer/polymer/air trilayer films. In this paper, we use linear stability analysis to investigate the effect of free charge and ac electric fields on the stability of trilayer systems. Our work is also motivated by our recent theoretical study which demonstrates how ac electric fields can be used to increase control over the pillar formation process in thin liquid bilayer films. For perfect dielectric films, the effect of an AC electric field can be understood by considering an equivalent DC field. Leaky dielectric films yield pillar configurations that are drastically different from perfect dielectric films, and AC fields can be used to control the location of free charge within the trilayer system. This can alter the pillar instability modes and generate smaller diameter pillars when conductivities are mismatched. The results presented may be of interest for the creation of complex topographical patterns on polymer coatings and in microelectronics.

  2. Thin electroless barrier for copper films

    NASA Astrophysics Data System (ADS)

    Lopatin, Sergey D.; Shacham-Diamand, Yosi Y.; Dubin, Valery M.; Kim, Yoon S.; Vasudev, P. K.

    1998-09-01

    Electroless barrier deposition for copper metallization potentially provides many advantages, among which are the selectivity to dielectrics, possibility of an amorphous alloy deposition, binary alloy properties enhancement by an addition of a third component, high conformity and low cost. Electroless cobalt-rich CoWP ternary alloys with high phosphorus content (approximately 11 weight percent) and a low weight percent of the third component, tungsten (approximately 2 percent), were deposited in basic solution onto copper and cobalt in integrated circuit structures. A capability of the electroless CoWP deposition to form thin selective and conformal barrier/protection films was demonstrated. Extendibility of these thin films to extremely small, nano- scale dimensions was observed. Conformal 10 nm thick CoWP layer was formed on the sidewalls of 30 - 40 nm wide seam of aspect ratio about 5:1 on the top of 0.4 micrometer wide in- laid Cu line. Thermal stability of electroless CoWP/Cu films investigated by Rutherford Backscattering Spectroscopy (RBS), Auger Electron Spectroscopy (AES) and Secondary Ion Mass Spectroscopy (SIMS) was extended to 500 degrees Celsius for 15 nm thick barrier. Atomic Force Microscopy (AFM) images of the electroless CoWP film surface and sectional analysis showed small grain sizes of CoWP on either electroless or Physical Vapor Deposited (PVD) Cu films. Several passivation schemes to protect the exposed Cu surface and adhesion promotion/barrier layers to stabilize the Cu/dielectric interface in a damascene process were demonstrated.

  3. Thermal conductivities of thin, sputtered optical films

    SciTech Connect

    Henager, C.H. Jr.; Pawlewicz, W.T.

    1991-05-01

    The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO{sub 2}/Si{sub 3}N{sub 4}){sup n} and Al(Al{sub 2}O{sub 3}/AIN){sup n}. Sputtered films of more conventional materials like SiO{sub 2}, Al{sub 2}O{sub 3}, Ta{sub 2}O{sub 5}, Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented.

  4. Characterization of lead zirconate titanate--lanthanum ruthenate thin film structures prepared by chemical solution deposition.

    PubMed

    Bencan, Andreja; Malic, Barbara; Drazic, Goran; Vukadinović, Miso; Kosec, Marija

    2007-01-01

    In this work, the results of compositional and microstructural analysis of lead zirconate titanate--lanthanum ruthenate thin film structures prepared by chemical solution deposition are discussed. The cross-section transmission electron microscope (TEM) micrographs of the La-Ru-O film deposited on a SiO2/Si substrate and annealed at 700 degrees C revealed RuO2 crystals embedded in a glassy silicate matrix. When the La-Ru-O film was deposited on a Pt/TiO2/SiO2/Si substrate, RuO2 and La4Ru6O19 crystallized after annealing at 700 degrees C. After firing at 550 degrees C randomly oriented lead zirconate titanate (PZT) thin films crystallized on the La-Ru-O/SiO2/Si substrate, while on La-Ru-O/Pt/TiO2/SiO2/Si substrates PZT thin films with (111) preferred orientation were obtained. No diffusion of the Ru atoms in the PZT film was found. Ferroelectric response of PZT thin films on these substrates is shown in comparison with the PZT film deposited directly on the Pt/TiO2/SiO2/Si substrate without a La-Ru-O layer.

  5. Large-area SnO{sub 2}: F thin films by offline APCVD

    SciTech Connect

    Wang, Yan; Wu, Yucheng; Qin, Yongqiang; Zhang, Zhihai; Shi, Chengwu; Zhang, Qingfeng; Li, Changhao; Xia, Xiaohong; Sun, Stanley; Chen, Leon

    2011-08-15

    Highlights: {yields} Large-area (1245 mm x 635 mm) FTO thin films were successfully deposited by offline APCVD process. {yields} The as-prepared FTO thin films with sheet resistance 8-11 {Omega}/{open_square} and direct transmittance more than 83% exhibited better than that of the online ones. {yields} The maximum quantum efficiency of the solar cells based on offline FTO substrate was 0.750 at wavelength 540 nm. {yields} The power of the solar modules using the offline FTO as glass substrates was 51.639 W, higher than that of the modules based on the online ones. -- Abstract: In this paper, we reported the successful preparation of fluorine-doped tin oxide (FTO) thin films on large-area glass substrates (1245 mm x 635 mm x 3 mm) by self-designed offline atmospheric pressure chemical vapor deposition (APCVD) process. The FTO thin films were achieved through a combinatorial chemistry approach using tin tetrachloride, water and oxygen as precursors and Freon (F-152, C2H4F2) as dopant. The deposited films were characterized for crystallinity, morphology (roughness) and sheet resistance to aid optimization of materials suitable for solar cells. We got the FTO thin films with sheet resistance 8-11 {Omega}/{open_square} and direct transmittance more than 83%. X-ray diffraction (XRD) characterization suggested that the as-prepared FTO films were composed of multicrystal, with the average crystal size 200-300 nm and good crystallinity. Further more, the field emission scanning electron microscope (FESEM) images showed that the films were produced with good surface morphology (haze). Selected samples were used for manufacturing tandem amorphous silicon (a-Si:H) thin film solar cells and modules by plasma enhanced chemical vapor deposition (PECVD). Compared with commercially available FTO thin films coated by online chemical vapor deposition, our FTO coatings show excellent performance resulting in a high quantum efficiency yield for a-Si:H solar cells and ideal open voltage

  6. Magnetic Thin Films of Inorganic Nanosheets

    NASA Astrophysics Data System (ADS)

    Yamamoto, Takashi; Namba, Hiroaki; Einaga, Yasuaki

    2012-02-01

    Molecule-based magnets have been fascinating materials because of the potential applications in information storage, electronic and spintronic devices. However, such applications would require arraying the active materials on a substrate or interfacing with other components. Here, we focus on fabricating multi-functional magnetic films using inorganic nanosheets as a building block. The thin films could be prepared by the modified Langmuir-Blodgett, LB, technique or the layer-by-layer, LbL, method, which are representative wet-processings for film preparation. As the magnetic LB film, we chose semiconductive titania nanosheets and magnetic Prussian Blue. Upon band gap excitation of titania nanosheets, electron injection into Prussian Blue was achieved with scavenging interlayer water molecules, leading to photoreduction to Prussian White. As the magnetic LbL film, we chose magnetic layered double hydroxide, LDH, nanosheets and non-magnetic smectite nanosheets. In powdered LDH, a coercivity increased with expanding the interlayer spacing. On the other hand, despite the larger interlayer spacing for the LbL film, a coercivity was less than that of the comparative powdered LDH. It is indicated LDH nanosheets are integrated in an anisotropic manner in the LbL films.

  7. Electrochromism in copper oxide thin films

    SciTech Connect

    Richardson, T.J.; Slack, J.L.; Rubin, M.D.

    2000-08-15

    Transparent thin films of copper(I) oxide prepared on conductive SnO2:F glass substrates by anodic oxidation of sputtered copper films or by direct electrodeposition of Cu2O transformed reversibly to opaque metallic copper films when reduced in alkaline electrolyte. In addition, the same Cu2O films transform reversibly to black copper(II) oxide when cycled at more anodic potentials. Copper oxide-to-copper switching covered a large dynamic range, from 85% and 10% photopic transmittance, with a coloration efficiency of about 32 cm2/C. Gradual deterioration of the switching range occurred over 20 to 100 cycles. This is tentatively ascribed to coarsening of the film and contact degradation caused by the 65% volume change on conversion of Cu to Cu2O. Switching between the two copper oxides (which have similar volumes) was more stable and more efficient (CE = 60 cm2/C), but covered a smaller transmittance range (60% to 44% T). Due to their large electrochemical storage capacity and tolerance for alkaline electrolytes, these cathodically coloring films may be useful as counter electrodes for anodically coloring electrode films such as nickel oxide or metal hydrides.

  8. High temperature thin film strain gauges

    NASA Astrophysics Data System (ADS)

    Kayser, P.; Godefroy, J. C.; Leca, L.

    The development of thin-film resistance strain gauges suitable for dynamic stress measurements up to 900 C and intended for blade vibration measurements is reported. The strain gauge is deposited by RF sputtering on nickel-base superalloys and consists of an NiCoCrAlY coating, an Al2O3 insulating layer, a sensing layer (NiCr, PdCr), an intermediate splicing layer (Pt), and a protective film (Al2O3 or SiO2). The electrical and mechanical properties of the sensing layers and preliminary results on the thermal stability of the gauges are discussed.

  9. Nonlinear viscoelastic characterization of thin polyethylene film

    NASA Technical Reports Server (NTRS)

    Wilbeck, J. S.

    1981-01-01

    In order to understand the state of stress and strain in a typical balloon fabricated from thin polyethylene film, experiment data in the literature reviewed. It was determined that the film behaves as a nonlinear viscoelasticity material and should be characterized accordingly. A simple uniaxial, nonlinear viscoelastic model was developed for predicting stress given a certain strain history. The simple model showed good qualitative agreement with results of constant rate, uniaxial accurately predicting stresses for cyclic strain histories typical of balloon flights. A program was outlined which will result in the development of a more complex nonlinear viscoelastic model.

  10. Silicon Oxynitride Thin Film Barriers for PV Packaging (Poster)

    SciTech Connect

    del Cueto, J. A.; Glick, S. H.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2006-10-03

    Dielectric, adhesion-promoting, moisture barriers comprised of silicon oxynitride thin film materials (SiOxNy with various material stoichiometric compositions x,y) were applied to: 1) bare and pre-coated soda-lime silicate glass (coated with transparent conductive oxide SnO2:F and/or aluminum), and polymer substrates (polyethylene terephthalate, PET, or polyethylene napthalate, PEN); plus 2) pre- deposited photovoltaic (PV) cells and mini-modules consisting of amorphous silicon (a-Si) and copper indium gallium diselenide (CIGS) thin-film PV technologies. We used plasma enhanced chemical vapor deposition (PECVD) process with dilute silane, nitrogen, and nitrous oxide/oxygen gas mixtures in a low-power (< or = 10 milliW per cm2) RF discharge at ~ 0.2 Torr pressure, and low substrate temperatures < or = 100(degrees)C, over deposition areas ~ 1000 cm2. Barrier properties of the resulting PV cells and coated-glass packaging structures were studied with subsequent stressing in damp-heat exposure at 85(degrees)C/85% RH. Preliminary results on PV cells and coated glass indicate the palpable benefits of the barriers in mitigating moisture intrusion and degradation of the underlying structures using SiOxNy coatings with thicknesses in the range of 100-200 nm.

  11. Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application.

    PubMed

    Zhuang, Jiaqing; Sun, Qi-Jun; Zhou, Ye; Han, Su-Ting; Zhou, Li; Yan, Yan; Peng, Haiyan; Venkatesh, Shishir; Wu, Wei; Li, Robert K Y; Roy, V A L

    2016-11-16

    Previous investigations on rare-earth oxides (REOs) reveal their high possibility as dielectric films in electronic devices, while complicated physical methods impede their developments and applications. Herein, we report a facile route to fabricate 16 REOs thin insulating films through a general solution process and their applications in low-voltage thin-film transistors as dielectrics. The formation and properties of REOs thin films are analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry, water contact angle measurement, X-ray photoemission spectroscopy (XPS), and electrical characterizations, respectively. Ultrasmooth, amorphous, and hydrophilic REO films with thickness around 10 nm have been obtained through a combined spin-coating and postannealing method. The compositional analysis results reveal the formation of RE hydrocarbonates on the surface and silicates at the interface of REOs films annealed on Si substrate. The dielectric properties of REO films are investigated by characterizing capacitors with a Si/Ln2O3/Au (Ln = La, Gd, and Er) structure. The observed low leakage current densities and large areal capacitances indicate these REO films can be employed as alternative gate dielectrics in transistors. Thus, we have successfully fabricated a series of low-voltage organic thin-film transistors based on such sol-gel derived REO films to demonstrate their application in electronics. The optimization of REOs dielectrics in transistors through further surface modification has also been studied. The current study provides a simple solution process approach to fabricate varieties of REOs insulating films, and the results reveal their promising applications as alternative gate dielectrics in thin-film transistors.

  12. Multiferroic oxide thin films and heterostructures

    NASA Astrophysics Data System (ADS)

    Lu, Chengliang; Hu, Weijin; Tian, Yufeng; Wu, Tom

    2015-06-01

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  13. Techniques for Connecting Superconducting Thin Films

    NASA Technical Reports Server (NTRS)

    Mester, John; Gwo, Dz-Hung

    2006-01-01

    Several improved techniques for connecting superconducting thin films on substrates have been developed. The techniques afford some versatility for tailoring the electronic and mechanical characteristics of junctions between superconductors in experimental electronic devices. The techniques are particularly useful for making superconducting or alternatively normally conductive junctions (e.g., Josephson junctions) between patterned superconducting thin films in order to exploit electron quantum-tunneling effects. The techniques are applicable to both low-Tc and high-Tc superconductors (where Tc represents the superconducting- transition temperature of a given material), offering different advantages for each. Most low-Tc superconductors are metallic, and heretofore, connections among them have been made by spot welding. Most high-Tc superconductors are nonmetallic and cannot be spot welded. These techniques offer alternatives to spot welding of most low-Tc superconductors and additional solutions to problems of connecting most high-Tc superconductors.

  14. Multiferroic oxide thin films and heterostructures

    SciTech Connect

    Lu, Chengliang E-mail: Tao.Wu@kaust.edu.sa; Hu, Weijin; Wu, Tom E-mail: Tao.Wu@kaust.edu.sa; Tian, Yufeng

    2015-06-15

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  15. Thin film photovoltaic panel and method

    DOEpatents

    Ackerman, Bruce; Albright, Scot P.; Jordan, John F.

    1991-06-11

    A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

  16. Electrostatic Discharge Effects on Thin Film Resistors

    NASA Technical Reports Server (NTRS)

    Sampson, Michael J.; Hull, Scott M.

    1999-01-01

    Recently, open circuit failures of individual elements in thin film resistor networks have been attributed to electrostatic discharge (ESD) effects. This paper will discuss the investigation that came to this conclusion and subsequent experimentation intended to characterize design factors that affect the sensitivity of resistor elements to ESD. The ESD testing was performed using the standard human body model simulation. Some of the design elements to be evaluated were: trace width, trace length (and thus width to length ratio), specific resistivity of the trace (ohms per square) and resistance value. However, once the experiments were in progress, it was realized that the ESD sensitivity of most of the complex patterns under evaluation was determined by other design and process factors such as trace shape and termination pad spacing. This paper includes pictorial examples of representative ESD failure sites, and provides some options for designing thin film resistors that are ESD resistant. The risks of ESD damage are assessed and handling precautions suggested.

  17. Triboelectric Nanogenerator Using Lithium Niobate Thin Film

    NASA Astrophysics Data System (ADS)

    Geng, Juan; Zhang, Xinzheng; Kong, Yongfa; Xu, Jingjun

    2017-06-01

    We present a triboelectric nanogenerator (TENG) using a lithium niobate thin film, as one of the triboelectric pairs which was grown on a silicon substrate by laser molecule beam epitaxy (LMBE). The designed TENG has the advantages of simple structure, easy fabrication, small size (1.1*1.0*0.15 cm3). An open-circuit voltage of 136 V and a short-circuit current of 8.40 μA have been achieved. The maximum output power is 307.5μW under the load resistance of 10MΩ. This is the first time to use lithium niobate thin film as one of the friction pair, which may make it possible to expand the application of triboelectric nanogenerator to optical field.

  18. Polycrystalline thin films FY 1992 project report

    SciTech Connect

    Zweibel, K.

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting next-generation'' options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called government/industry partnerships'') that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  19. Thin film strain gage development program

    NASA Technical Reports Server (NTRS)

    Grant, H. P.; Przybyszewski, J. S.; Anderson, W. L.; Claing, R. G.

    1983-01-01

    Sputtered thin-film dynamic strain gages of 2 millimeter (0.08 in) gage length and 10 micrometer (0.0004 in) thickness were fabricated on turbojet engine blades and tested in a simulated compressor environment. Four designs were developed, two for service to 600 K (600 F) and two for service to 900 K (1200 F). The program included a detailed study of guidelines for formulating strain-gage alloys to achieve superior dynamic and static gage performance. The tests included gage factor, fatigue, temperature cycling, spin to 100,000 G, and erosion. Since the installations are 30 times thinner than conventional wire strain gage installations, and any alteration of the aerodynamic, thermal, or structural performance of the blade is correspondingly reduced, dynamic strain measurement accuracy higher than that attained with conventional gages is expected. The low profile and good adherence of the thin film elements is expected to result in improved durability over conventional gage elements in engine tests.

  20. Thin Films of Polypyrrole on Particulate Aluminum

    DTIC Science & Technology

    2009-02-01

    C H R I S T O P H E R V E T T E R , X I A O N I N G Q I , S U B R A M A N Y A M V . K A S I S O M A Y A J U L A , A N D Thin Films of Polypyrrole on...1. REPORT DATE FEB 2009 2. REPORT TYPE 3. DATES COVERED 00-00-2009 to 00-00-2009 4. TITLE AND SUBTITLE Thin Films of Polypyrrole on...layer 3 Why Polypyrrole /Flake? Polypyrrole  Poor mechanical properties  Poor adhesion  Solubility issues  Continuous layer needed 4 Polypyrrole Coated

  1. Substrate heater for thin film deposition

    DOEpatents

    Foltyn, Steve R.

    1996-01-01

    A substrate heater for thin film deposition of metallic oxides upon a target substrate configured as a disk including means for supporting in a predetermined location a target substrate configured as a disk, means for rotating the target substrate within the support means, means for heating the target substrate within the support means, the heating means about the support means and including a pair of heating elements with one heater element situated on each side of the predetermined location for the target substrate, with one heater element defining an opening through which desired coating material can enter for thin film deposition and with the heating means including an opening slot through which the target substrate can be entered into the support means, and, optionally a means for thermal shielding of the heating means from surrounding environment is disclosed.

  2. Plasmonics in Thin Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Fahr, Stephan; Rockstuhl, Carsten; Lederer, Falk

    2009-10-01

    Thin film solar cells made of amorphous or microcrystalline silicon provide renewable energy at the benefits of low material consumption. As a drawback, these materials don't offer the high carrier mobilities of their crystalline counterpart. Due to low carrier mobilities, increased process times and material consumption, thick absorbing layers have to be avoided. For maintaining the absorption of the impinging light as high as possible, such thin film devices ask for photon management. Here we show how metallic nanoparticles that sustain the excitation of localized plasmon polaritons placed atop of the solar cell or in between two absorbing layers can increase the efficiency of solar cells. Numerical results for 1D as well as 2D periodic arrangements of nanoparticles will be shown.

  3. DNA strand patterns on aluminium thin films.

    PubMed

    Khatir, Nadia Mahmoudi; Banihashemian, Seyedeh Maryam; Periasamy, Vengadesh; Majid, Wan Haliza Abd; Rahman, Saadah Abdul; Shahhosseini, Fatemeh

    2011-01-01

    A new patterning method using Deoxyribose Nucleic Acid (DNA) strands capable of producing nanogaps of less than 100 nm is proposed and investigated in this work. DNA strands from Bosenbergia rotunda were used as the fundamental element in patterning DNA on thin films of aluminium (Al) metal without the need for any lithographic techniques. The DNA strands were applied in buffer solutions onto thin films of Al on silicon (Si) and the chemical interactions between the DNA strands and Al creates nanometer scale arbitrary patterning by direct transfer of the DNA strands onto the substrate. This simple and cost-effective method can be utilized in the fabrication of various components in electronic chips for microelectronics and Nano Electronic Mechanical System (NEMS) applications in general.

  4. Domain switching of fatigued ferroelectric thin films

    SciTech Connect

    Tak Lim, Yun; Yeog Son, Jong E-mail: hoponpop@ulsan.ac.kr; Shin, Young-Han E-mail: hoponpop@ulsan.ac.kr

    2014-05-12

    We investigate the domain wall speed of a ferroelectric PbZr{sub 0.48}Ti{sub 0.52}O{sub 3} (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

  5. Silver nanowire composite thin films as transparent electrodes for Cu(In,Ga)Se₂/ZnS thin film solar cells.

    PubMed

    Tan, Xiao-Hui; Chen, Yu; Liu, Ye-Xiang

    2014-05-20

    Solution processed silver nanowire indium-tin oxide nanoparticle (AgNW-ITONP) composite thin films were successfully applied as the transparent electrodes for Cu(In,Ga)Se₂ (CIGS) thin film solar cells with ZnS buffer layers. Properties of the AgNW-ITONP thin film and its effects on performance of CIGS/ZnS thin film solar cells were studied. Compared with the traditional sputtered ITO electrodes, the AgNW-ITONP thin films show comparable optical transmittance and electrical conductivity. Furthermore, the AgNW-ITONP thin film causes no physical damage to the adjacent surface layer and does not need high temperature annealing, which makes it very suitable to use as transparent conductive layers for heat or sputtering damage-sensitive optoelectronic devices. By using AgNW-ITONP electrodes, the required thickness of the ZnS buffer layers for CIGS thin film solar cells was greatly decreased.

  6. Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication

    NASA Astrophysics Data System (ADS)

    Lausecker, E.; Huang, Y.; Fromherz, T.; Sturm, J. C.; Wagner, S.

    2010-06-01

    We developed self-aligned imprint lithography (SAIL) for top-gate amorphous silicon (a-Si) thin-film transistors (TFTs). Our SAIL process enables a device pattern definition in a single imprint step that uses a three-level mold. The various levels of the mold are defined by a stepwise opening of a chromium hardmask and subsequent dry-etching. For TFT fabrication we imprint, and consecutively etch the imprint resist levels and device layers. The imprinted top-gate a-Si TFTs have nickel silicide source/drain self-aligned to the gate with mobilities of ˜0.4 cm2/V s.

  7. Peeling process of thin-film solar cells using graphene layers

    NASA Astrophysics Data System (ADS)

    Ishikawa, Ryousuke; Kurokawa, Yasuyoshi; Miyajima, Shinsuke; Konagai, Makoto

    2017-08-01

    A novel peeling process for thin-film solar cells using graphene layers was demonstrated. We fabricated amorphous silicon (a-Si) solar cells as substitutes for the undeveloped nanostructured silicon solar cells on graphene layers in order to investigate the solar cell performance after peeling for the first time. The graphene layers functioned as transparent electrodes after the peeling process, even though the series resistance increased after the peeling. Next, we fabricated a silicon nanowire (SiNW) array on graphene layers by a combination of chemical etching and thermal crystallization. Finally, we successfully peeled a SiNW array using graphene layers.

  8. Mode coupling by plasmonic surface scatterers in thin-film silicon solar cells

    NASA Astrophysics Data System (ADS)

    van Lare, M.; Lenzmann, F.; Verschuuren, M. A.; Polman, A.

    2012-11-01

    We demonstrate effective mode coupling by light scattering from periodic Ag nanoparticle arrays printed onto a completed thin-film a-Si:H solar cell. Current-voltage measurements show a photocurrent enhancement of 10% compared to a flat reference cell with a standard antireflection coating. External quantum efficiency measurements for the nanopatterned cells show clear infrared photocurrent enhancement peaks, corresponding to coupling to discrete waveguide modes in the a-Si:H layer. The data are in good agreement with three-dimensional finite element simulations, which are used to further optimize the design. We show that broadband photocurrent enhancement can be obtained over the 450-750 nm spectral range.

  9. Laser annealing of thin organic films

    NASA Astrophysics Data System (ADS)

    Agashkov, A. V.; Ivlev, G. D.; Filippov, V. V.; Kashko, I. A.; Shulitski, B. G.

    2010-09-01

    Microstructure of defects in organic solar cells containing PEDOT:PSS:Sorbitol layer has been studied and conditions for successful pulsed laser annealing of them have been determined. Investigation with oblique illumination showed that radial symmetry of fine structure is an intrinsic property of either separated discotic defects or block structure. Our study shows that pulsed laser annealing of organic thin films in inert atmosphere has promising future.

  10. Laser annealing of thin organic films

    NASA Astrophysics Data System (ADS)

    Agashkov, A. V.; Ivlev, G. D.; Filippov, V. V.; Kashko, I. A.; Shulitski, B. G.

    2011-02-01

    Microstructure of defects in organic solar cells containing PEDOT:PSS:Sorbitol layer has been studied and conditions for successful pulsed laser annealing of them have been determined. Investigation with oblique illumination showed that radial symmetry of fine structure is an intrinsic property of either separated discotic defects or block structure. Our study shows that pulsed laser annealing of organic thin films in inert atmosphere has promising future.

  11. Novel thin-film heat flux sensors

    NASA Technical Reports Server (NTRS)

    Bhatt, Hemanshu; Zeller, Mary; Will, Herbert

    1992-01-01

    A new and simpler design for thin-film heat flux sensors for utilization in high heat flux environments is presented. The design of these sensors consists of a planar differential thermopile made up of a number of thermocouple pairs arranged in a circular array, two different thermal resistance layers deposited on the inside and outside junctions of the thermopile and a high emissivity coating. This design has shown good potential for measuring heat fluxes in severe environments of aerospace propulsion systems.

  12. Structures for dense, crack free thin films

    DOEpatents

    Jacobson, Craig P [Lafayette, CA; Visco, Steven J [Berkeley, CA; De Jonghe, Lutgard C [Lafayette, CA

    2011-03-08

    The process described herein provides a simple and cost effective method for making crack free, high density thin ceramic film. The steps involve depositing a layer of a ceramic material on a porous or dense substrate. The deposited layer is compacted and then the resultant laminate is sintered to achieve a higher density than would have been possible without the pre-firing compaction step.

  13. Large-area thin-film modules

    NASA Technical Reports Server (NTRS)

    Tyan, Y. S.; Perez-Albuerne, E. A.

    1985-01-01

    The low cost potential of thin film solar cells can only be fully realized if large area modules can be made economically with good production yields. This paper deals with two of the critical challenges. A scheme is presented which allows the simple, economical realization of the long recognized, preferred module structure of monolithic integration. Another scheme reduces the impact of shorting defects and, as a result, increases the production yields. Analytical results demonstrating the utilization and advantages of such schemes are discussed.

  14. Packaging material for thin film lithium batteries

    DOEpatents

    Bates, John B.; Dudney, Nancy J.; Weatherspoon, Kim A.

    1996-01-01

    A thin film battery including components which are capable of reacting upon exposure to air and water vapor incorporates a packaging system which provides a barrier against the penetration of air and water vapor. The packaging system includes a protective sheath overlying and coating the battery components and can be comprised of an overlayer including metal, ceramic, a ceramic-metal combination, a parylene-metal combination, a parylene-ceramic combination or a parylene-metal-ceramic combination.

  15. Temperature Behavior of Thin Film Varactor

    DTIC Science & Technology

    2012-01-01

    Traditionally, electronic tuning has been achieved through ferrite or semiconductor diodes. Commercially available ferrite products are expensive and...heated substrate (770 °C) (1, 3, 4). The temperature behavior of thin-film varactor was done in Delta 9028 temperature-controlled chamber. It has...temperature coefficient of PLD varactor is 2600 ppm at a 50-V bias and 604 ppm at a 100-V bias. 9 5. References 1. Kim, W . J.; Chang, W .; Qadri, S. B

  16. Stable localized patterns in thin liquid films

    NASA Technical Reports Server (NTRS)

    Deissler, Robert J.; Oron, Alexander

    1991-01-01

    We study a 2-D nonlinear evolution equation which describes the 3-D spatiotemporal behavior of the air-liquid interface of a thin liquid film lying on the underside of a cooled horizontal plate. We show that the Marangoni effect can stabilize the destabilizing effect of gravity (the Rayleigh-Taylor instability) allowing for the existence of stable localized axisymmetric solutions for a wide range of parameter values. Various properties of these structures are discussed.

  17. Large-area thin-film modules

    NASA Astrophysics Data System (ADS)

    Tyan, Y. S.; Perez-Albuerne, E. A.

    1985-10-01

    The low cost potential of thin film solar cells can only be fully realized if large area modules can be made economically with good production yields. This paper deals with two of the critical challenges. A scheme is presented which allows the simple, economical realization of the long recognized, preferred module structure of monolithic integration. Another scheme reduces the impact of shorting defects and, as a result, increases the production yields. Analytical results demonstrating the utilization and advantages of such schemes are discussed.

  18. Thin-film optical shutter. Final report

    SciTech Connect

    Matlow, S.L.

    1981-02-01

    A specific embodiment of macroconjugated macromolecules, the poly (p-phenylene)'s, has been chosen as the one most likely to meet all of the requirements of the Thin Film Optical Shutter project (TFOS). The reason for this choice is included. In order to be able to make meaningful calculations of the thermodynamic and optical properties of the poly (p-phenylene)'s a new quantum mechanical method was developed - Equilibrium Bond Length (EBL) Theory. Some results of EBL Theory are included.

  19. Thin Film Sensors for Surface Measurements

    NASA Technical Reports Server (NTRS)

    Martin, Lisa C.; Wrbanek, John D.; Fralick, Gustave C.

    2001-01-01

    Advanced thin film sensors that can provide accurate surface temperature, strain, and heat flux measurements have been developed at NASA Glenn Research Center. These sensors provide minimally intrusive characterization of advanced propulsion materials and components in hostile, high-temperature environments as well as validation of propulsion system design codes. The sensors are designed for applications on different material systems and engine components for testing in engine simulation facilities. Thin film thermocouples and strain gauges for the measurement of surface temperature and strain have been demonstrated on metals, ceramics and advanced ceramic-based composites of various component configurations. Test environments have included both air-breathing and space propulsion-based engine and burner rig environments at surface temperatures up to 1100 C and under high gas flow and pressure conditions. The technologies developed for these sensors as well as for a thin film heat flux gauge have been integrated into a single multifunctional gauge for the simultaneous real-time measurement of surface temperature, strain, and heat flux. This is the first step toward the development of smart sensors with integrated signal conditioning and high temperature electronics that would have the capability to provide feedback to the operating system in real-time. A description of the fabrication process for the thin film sensors and multifunctional gauge will be provided. In addition, the material systems on which the sensors have been demonstrated, the test facilities and the results of the tests to-date will be described. Finally, the results will be provided of the current effort to demonstrate the capabilities of the multifunctional gauge.

  20. Studies of the new findings in preparing a scaled amorphous silicon thin-film transistor

    NASA Astrophysics Data System (ADS)

    Lin, Cheng-I.; Fang, Yean-Kuen; Kuo, Che-Hao

    2014-09-01

    New findings in deposition of the phosphorus (P)-doped n+ a-Si (amorphous silicon) thin layer as source/drain regions for a scaled thin-film transistor were studied systematically. The sheet resistance of the n+ a-Si layer decreases with decreasing PH3 gas flow rate. As a result, both on-current and on/off current ratio enhance with decreasing PH3 flow rate up to 370 and 1,515 %, respectively. These observations are contrary to the conventional plasma-enhanced CVD doping process, i.e., lower doping will result in a low sheet resistance. Based on the SEM, AFM, FTIR, XRD and Raman analyses, we attribute the new observations to the change of film structure, i.e., from amorphous Si to nano-Si or micro-Si. Also, the origins of the structure shift are discussed in details.

  1. Reduced Glass Transition Temperatures in Thin Polymer Films: Surface Effect or Artifact?

    NASA Astrophysics Data System (ADS)

    Bäumchen, O.; McGraw, J. D.; Forrest, J. A.; Dalnoki-Veress, K.

    2012-08-01

    We have examined the direct effect of manipulating the number of free surfaces on the measured glass transition temperature Tg of thin polystyrene films. Thin films in the range 35nmfilms. By noting the change in slope in each of these quantities, a Tg value can be assigned in quantitative agreement with previously reported results. For thin freestanding films this value is reduced from that of the bulk. The exact same films are then transferred to a Si substrate and the Tg of the resulting supported film was determined. The Tg values of the now supported films are the same as the bulk value and the same as previous reports of similar supported films. These experiments unambiguously show that free interfaces are the dominant cause of the Tg reductions for the film thicknesses studied.

  2. Additives to silane for thin film silicon photovoltaic devices

    DOEpatents

    Hurley, Patrick Timothy; Ridgeway, Robert Gordon; Hutchison, Katherine Anne; Langan, John Giles

    2013-09-17

    Chemical additives are used to increase the rate of deposition for the amorphous silicon film (.alpha.Si:H) and/or the microcrystalline silicon film (.mu.CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

  3. Collective Behavior of Amoebae in Thin Films

    NASA Astrophysics Data System (ADS)

    Bae, Albert

    2005-03-01

    We have discovered new aspects of social behavior in Dictyostelium discoideum by culturing high density colonies in liquid media depleted of nutrients in confined geometries by using three different preparations: I. thin (15-40um thick) and II. ultrathin (<3um) films of liquid media with a mineral oil overlayer, and III. microfluidic chambers fabricated in PDMS (˜7um tall). We find greatly reduced, if not eliminated, cell on cell layering in the microfluidic system when compared to the wetting layer preparations. The ultrathin films reveal robust behavior of cells despite flattening that increased their areas by over an order of magnitude. We also observed that the earliest synchronized response of cells following the onset of starvation, a precursor to aggregation, was hastened by reducing the thickness of the aqueous culture layer. We were surprised to find that the threshold concentration for aggregation was raised by thin film confinement when compared to bulk behavior. Finally, both the ultra thin and microfluidic preparations reveal, with new clarity, vortex states of aggregation.

  4. Design and characterization of thin film microcoolers

    NASA Astrophysics Data System (ADS)

    LaBounty, Chris; Shakouri, Ali; Bowers, John E.

    2001-04-01

    Thin film coolers can provide large cooling power densities compared to bulk thermoelectrics due to the close spacing of hot and cold junctions. Important parameters in the design of such coolers are investigated theoretically and experimentally. A three-dimensional (3D) finite element simulator (ANSYS) is used to model self-consistently thermal and electrical properties of a complete device structure. The dominant three-dimensional thermal and electrical spreading resistances acquired from the 3D simulation are also used in a one-dimensional model (MATLAB) to obtain faster, less rigorous results. Heat conduction, Joule heating, thermoelectric and thermionic cooling are included in these models as well as nonideal effects such as contact resistance, finite thermal resistance of the substrate and the heat sink, and heat generation in the wire bonds. Simulations exhibit good agreement with experimental results from InGaAsP-based thin film thermionic emission coolers which have demonstrated maximum cooling of 1.15 °C at room temperature. With the nonideal effects minimized, simulations predict that single stage thin film coolers can provide up to 20-30 °C degrees centigrade cooling with cooling power densities of several 1000 W/cm2.

  5. Asymmetric grain distribution in phthalocyanine thin films

    SciTech Connect

    Gentry, K. Paul; Gredig, Thomas; Schuller, Ivan K.

    2009-11-01

    Many electronic and optical properties of organic thin films depend on the precise morphology of grains. Iron phthalocyanine thin films are grown on sapphire substrates at different temperatures to study the effect of grain growth kinematics and to experimentally quantify the grain size distribution in organic thin films. The grain size is measured with an atomic force microscope and the data is processed and analyzed with well-known image segmentation algorithms. For relevant statistics, over 3000 grains are evaluated for each sample. The data show pronounced asymmetric grain growth with increasing deposition temperature from almost spherical grains at room temperature to elongated needlelike shapes at 260 deg. C. The average size along the major axis increases from 35 to 200 nm and along the minor axis from 25 to 90 nm. The distribution is almost symmetric at low-deposition temperatures, but becomes lognormal at higher temperatures. Strikingly, the major axis and minor axis of the elliptically shaped grains have different distributions at all temperatures due to the planar asymmetry of the molecule.

  6. Multiferroic RMnO3 thin films

    NASA Astrophysics Data System (ADS)

    Fontcuberta, Josep

    2015-03-01

    Multiferroic materials have received an astonishing attention in the last decades due to expectations that potential coupling between distinct ferroic orders could inspire new applications and new device concepts. As a result, a new knowledge on coupling mechanisms and materials science has dramatically emerged. Multiferroic RMnO3 perovskites are central to this progress, providing a suitable platform to tailor spin-spin and spin-lattice interactions. With views towards applications, the development of thin films of multiferroic materials have also progressed enormously and nowadays thin-film manganites are available, with properties mimicking those of bulk compounds. Here we review achievements on the growth of hexagonal and orthorhombic RMnO3 epitaxial thin films and the characterization of their magnetic and ferroelectric properties, we discuss some challenging issues, and we suggest some guidelines for future research and developments. En ce qui concerne les applications, le développement de films minces de matériaux multiferroïques a aussi énormément progressé, et de nos jours des films minces de manganites avec des propriétés similaires à celles des matériaux massifs existent. Nous passons en revue ici les résultats obtenus dans le domaine de la croissance de couches minces épitaxiés de RMnO3 hexagonal et orthorhombique et de la caractérisation de leurs propriétés magnétiques et ferroélectriques. Nous discutons certains enjeux et proposons quelques idées pour des recherches et développements futurs.

  7. Control of crystalline volume and nano crystal grain size in nanocrystalline silicon thin film deposited by PECVD

    NASA Astrophysics Data System (ADS)

    Bui, Thanh Tung; Chien Dang, Mau

    2014-11-01

    Application of the radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique was studied to fabricate amorphous and nanocrystalline silicon (a-Si and nc-Si) thin films for photovoltaic devices at substrate temperature of 200 °C. Amorphous-crystalline transition of silicon thin films in working conditions of PECVD system was shown as a function of deposition parameters, i.e., dilution ratio of silane (SiH4) in hydrogen, total gas pressure during deposition and RF excitation power density. The crystalline volume as well as grain size of nanocrystalline silicon films could be successfully controlled by tuning those deposition parameters. Micro Raman scattering spectroscopy and spectroscopic ellipsometry (SE) methods were used to characterize the structure and crystallization of the deposited silicon thin films. We could make nc-Si thin films with various crystalline volumes. Nc-Si grain size was also controlled and was in the range of 3-5 nm.

  8. Local Mixed State in HTSC Thin Films

    NASA Astrophysics Data System (ADS)

    Gordion, Irina; Tokman, Iosif

    1997-03-01

    We propose a new way to investigate the local properties of YBaCuO thin films. Micromagnet ( SmCo5 with size 1 × 1 × 0.5 mm ) has been used to induce the mixed state in the local zone isolated from the film edge. We have the experimental evidence ( Y.Nozdrin, P.Visheslavtsev, I.Tokman, I.Gordion, "A Laser-Magnetic Tomography for HTSC Film", IEEE Trans. on Appl. Superconductivity. v.5 n.2, pp. 1424-1427, (1995)) that flux flow in this case does not penetrate through the edge of the film, and this fact has also been proved by theoretical calculation of meissner current density induced by micromagnet in the HTSC disk which was based on London model for superconductors. >From calculation based on Bean-like model for critical state it has been found that the radius of induced local mixed state did not exceed ac (maximum distance between the micromagnet and the film at which vortices appeared). Experimental measurement by scanning Hall probe has proved this fact. So we can reduce the size of induced mixed state zone by minimizing the size of the micromagnet. This method can be useful for local investigation of HTSC films.

  9. Electrocaloric devices based on thin-film heat switches

    NASA Astrophysics Data System (ADS)

    Epstein, Richard I.; Malloy, Kevin J.

    2009-09-01

    We describe a new approach to refrigeration, heat pumping, and electrical generation that allows one to exploit the attractive properties of thin films of electrocaloric materials. Layers of electrocaloric material coupled with thin-film heat switches can work as either refrigerators and heat pumps or electrical generators, depending on the phasing of the applied voltages and heat switching. With heat switches based on thin layers of liquid crystals, the efficiency of electrocaloric thin-film devices can be at least as high as that of current thermoelectric devices. Advanced heat switches that may use carbon nanotubes would enable thin-film refrigerators and generators to outperform conventional vapor-compression devices.

  10. Active superconducting devices formed of thin films

    DOEpatents

    Martens, Jon S.; Beyer, James B.; Nordman, James E.; Hohenwarter, Gert K. G.

    1991-05-28

    Active superconducting devices are formed of thin films of superconductor which include a main conduction channel which has an active weak link region. The weak link region is composed of an array of links of thin film superconductor spaced from one another by voids and selected in size and thickness such that magnetic flux can propagate across the weak link region when it is superconducting. Magnetic flux applied to the weak link region will propagate across the array of links causing localized loss of superconductivity in the links and changing the effective resistance across the links. The magnetic flux can be applied from a control line formed of a superconducting film deposited coplanar with the main conduction channel and weak link region on a substrate. The devices can be formed of any type to superconductor but are particularly well suited to the high temperature superconductors since the devices can be entirely formed from coplanar films with no overlying regions. The devices can be utilized for a variety of electrical components, including switching circuits, amplifiers, oscillators and modulators, and are well suited to microwave frequency applications.

  11. Thin Films Characterization by Ultra Trace Metrology

    SciTech Connect

    Danel, A.; Nolot, E.; Decorps, T.; Lardin, T.; Veillerot, M.; Lhostis, S.; Campidelli, Y.; Calvo-Munoz, M.-L.; Kohno, H.; Yamagami, M.

    2007-09-26

    Sensitive and accurate characterization of thin films used in nanoelectronics, thinner than a few nm, represents a challenge for many conventional methods, especially when considering in-line control. With capabilities in the E10 at/cm{sup 2} (<1/10 000 of a mono layer), methods usually dedicated to contamination analysis appear promising, especially TXRF thanks to its non invasive and ease of use aspects, and to its measurement speed and mapping capability. This study shows that the range of linear results from TXRF can be extended to thicknesses of a few nm when using an incident angle higher than the critical angle of the analyzed film. Thus, despite degraded performances in terms of low detection limit, TXRF can provide a direct and very sensitive reading of some critical deposition processes. A dynamic repeatability better than 1% (standard deviation) has been obtained for the control of a 0.6 nm Al{sub 2}O{sub 3} tunnel oxide deposited on a magnetic stack. On the other hand, composition analysis by TXRF, and especially the detection of minor elements into thin films, requires the use of a specific incident angle to optimize sensitivity. Under the best conditions, determination of the composition of Co -based self aligned barriers (CoWP and CoWMoPB films with Co concentration >80%) is done with a precision of 6% on P, 8% on Mo and 13% on W (standard deviation)

  12. Nanocrystalline silicon based thin film solar cells

    NASA Astrophysics Data System (ADS)

    Ray, Swati

    2012-06-01

    Amorphous silicon solar cells and panels on glass and flexible substrate are commercially available. Since last few years nanocrystalline silicon thin film has attracted remarkable attention due to its stability under light and ability to absorb longer wavelength portion of solar spectrum. For amorphous silicon/ nanocrystalline silicon double junction solar cell 14.7% efficiency has been achieved in small area and 13.5% for large area modules internationally. The device quality nanocrystalline silicon films have been fabricated by RF and VHF PECVD methods at IACS. Detailed characterizations of the materials have been done. Nanocrystalline films with low defect density and high stability have been developed and used as absorber layer of solar cells.

  13. Thin Film Deposition Using Energetic Ions

    PubMed Central

    Manova, Darina; Gerlach, Jürgen W.; Mändl, Stephan

    2010-01-01

    One important recent trend in deposition technology is the continuous expansion of available processes towards higher ion assistance with the subsequent beneficial effects to film properties. Nowadays, a multitude of processes, including laser ablation and deposition, vacuum arc deposition, ion assisted deposition, high power impulse magnetron sputtering and plasma immersion ion implantation, are available. However, there are obstacles to overcome in all technologies, including line-of-sight processes, particle contaminations and low growth rates, which lead to ongoing process refinements and development of new methods. Concerning the deposited thin films, control of energetic ion bombardment leads to improved adhesion, reduced substrate temperatures, control of intrinsic stress within the films as well as adjustment of surface texture, phase formation and nanotopography. This review illustrates recent trends for both areas; plasma process and solid state surface processes. PMID:28883323

  14. Thermal properties of methyltrimethoxysilane aerogel thin films

    NASA Astrophysics Data System (ADS)

    Acquaroli, Leandro N.; Newby, Pascal; Santato, Clara; Peter, Yves-Alain

    2016-10-01

    Aerogels are light and porous solids whose properties, largely determined by their nanostructure, are useful in a wide range of applications, e.g., thermal insulation. In this work, as-deposited and thermally treated air-filled silica aerogel thin films synthesized using the sol-gel method were studied for their thermal properties using the 3-omega technique, at ambient conditions. The thermal conductivity and diffusivity were found to increase as the porosity of the aerogel decreased. Thermally treated films show a clear reduction in thermal conductivity compared with that of as-deposited films, likely due to an increase of porosity. The smallest thermal conductivity and diffusivity found for our aerogels were 0.019 W m-1 K-1 and 9.8 × 10-9 m2 s-1. A model was used to identify the components (solid, gaseous and radiative) of the total thermal conductivity of the aerogel.

  15. Electronic transport in nanocrystalline germanium/hydrogenated amorphous silicon composite thin films

    NASA Astrophysics Data System (ADS)

    Bodurtha, Kent Edward

    Recent interest in composite materials based on hydrogenated amorphous silicon (a-Si:H) stems in part from its potential for technical applications in thin film transistors and solar cells. Previous reports have shown promising results for films of a-Si:H with embedded silicon nanocrystals, with the goal of combining the low cost, large area benefits of hydrogenated amorphous silicon with the superior electronic characteristics of crystalline material. These materials are fabricated in a dual-chamber plasma-enhanced chemical vapor deposition system in which the nanocrystals are produced separately from the amorphous film, providing the flexibility to independently tune the growth parameters of each phase; however, electronic transport through these and other similar materials is not well understood. This thesis reports the synthesis and characterization of thin films composed of germanium nanocrystals embedded in a-Si:H. The results presented here describe detailed measurements of the conductivity, photoconductivity and thermopower which reveal a transition from conduction through the a-Si:H for samples with few germanium nanocrystals, to conduction through the nanocrystal phase as the germanium crystal fraction XGe is increased. These films display reduced photosensitivity as XGe is increased, but an unexpected increase in the dark conductivity is found in samples with X Ge > 5% after long light exposures. Detailed studies of the conductivity temperature dependence in these samples exposes a subtle but consistent deviation from the standard Arrhenius expression; the same departure is found in samples of pure a-Si:H; a theoretical model is presented which accurately describes the actual conductivity temperature dependence.

  16. Direct measurement of free-energy barrier to nucleation of crystallites in amorphous silicon thin films

    NASA Technical Reports Server (NTRS)

    Shi, Frank G.

    1994-01-01

    A method is introduced to measure the free-energy barrier W(sup *), the activation energy, and activation entropy to nucleation of crystallites in amorphous solids, independent of the energy barrier to growth. The method allows one to determine the temperature dependence of W(sup *), and the effect of the preparation conditions of the initial amorphous phase, the dopants, and the crystallization methds on W(sup *). The method is applied to determine the free-energy barrier to nucleation of crystallites in amorphous silicon (a-Si) thin films. For thermally induced nucleation in a-Si thin films with annealing temperatures in the range of from 824 to 983 K, the free-energy barrier W(sup *) to nucleation of silicon crystals is about 2.0 - 2.1 eV regardless of the preparation conditions of the films. The observation supports the idea that a-Si transforms into an intermediate amorphous state through the structural relaxation prior to the onset of nucleation of crystallites in a-Si. The observation also indicates that the activation entropy may be an insignificant part of the free-energy barrier for the nucleation of crystallites in a-Si. Compared with the free-energy barrier to nucleation of crystallites in undoped a-Si films, a significant reduction is observed in the free-energy barrier to nucleation in Cu-doped a-Si films. For a-Si under irradiation of Xe(2+) at 10(exp 5) eV, the free-energy barrier to ion-induced nucleation of crystallites is shown to be about half of the value associated with thermal-induced nucleation of crystallites in a-Si under the otherwise same conditions, which is much more significant than previously expected. The present method has a general kinetic basis; it thus should be equally applicable to nucleation of crystallites in any amorphous elemental semiconductors and semiconductor alloys, metallic and polymeric glasses, and to nucleation of crystallites in melts and solutions.

  17. Investigation of the a-Si:H Film Deep Localized States by Capacitance DLTS

    NASA Astrophysics Data System (ADS)

    Atilgan, Ýsmail; Özder, Serhat; Katircioðlu, Bayram

    1996-07-01

    Phosporus doped a-Si:H films were deposited on both chromium coated glass and n+-Si wafers via the glow discharge system. Schottky diodes were produced by depositing palladium and chromium electrodes by using the sputtering and electron gun techniques, respectively. The admittance associated with the depletion region was derived and analyzed. By temperature scanning of the high frequency depletion capacitance, a density of localized states near the bulk Fermi level was found as 1019 cm- 3 eV-1. Moreover, an analysis by a capacitive DLTS technique carried out a density analysis of the localized deep state distribution along the upper half of the pseudogap with a minimum at 0.4 eV below the conduction band edge.

  18. Fabrication of double barrier structures in single layer c-Si-QDs/a-SiOx films for realization of energy selective contacts for hot carrier solar cells

    NASA Astrophysics Data System (ADS)

    Kar, Debjit; Das, Debajyoti

    2017-01-01

    Thin films of c-Si-QDs embedded in an a-SiOx dielectric matrix forming arrays of double barrier structures have been fabricated by reactive rf-magnetron sputtering at ˜400 °C, without post-deposition annealing. The formation of larger size c-Si-QDs of reduced number density in homogeneous distribution within a less oxygenated a-SiOx matrix at higher plasma pressure introduces systematic widening of the average periodic distance between the adjacent `c-Si-QDs in a-SiOx', as obtained by X-ray reflectivity and transmission electron microscopy studies. A wave-like pattern in the J-E characteristics identifies the formation of periodic double-barrier structures along the path of the movement of charge carriers across the QDs and that those are originated by the a-SiOx dielectric matrix around the c-Si-QDs. A finite distribution of the size of c-Si-QDs introduces a broadening of the current density peak and simultaneously originates the negative differential resistance-like characteristics, which have suitable applications in the energy selective contacts that act as energy filters for hot carrier solar cells. A simple yet effective process technology has been demonstrated. Further initiative on tuning the energy selectivity by reducing the size and narrowing the size-distribution of Si-QDs can emerge superior energy selective contacts for hot carrier solar cells, paving ground for accomplishing all-Si solar cells.

  19. Spontaneous rupture of thinning liquid films with Plateau borders

    NASA Astrophysics Data System (ADS)

    Anderson, Anthony; Brush, Lucien; Davis, Stephen

    2009-11-01

    Spontaneous film rupture from van der Waals instability is investigated in 2D. A thin liquid film between adjacent bubbles in a foam has finite length, curved boundaries (Plateau borders), and a drainage flow from capillary suction that causes thinning. A full linear stability analysis of this thinning film shows that rupture occurs once the film has thinned to tens of nanometers. Whereas, in an unbounded, quiescent, flat free film, rupture occurs when the thickness is hundreds of nanometers. Finite length, Plateau borders and flow are all found to contribute to the stabilization. The drainage flow leads to several distinct qualitative features as well. In particular, unstable disturbances are advected by the flow to the edges of the thin film. As a result, the edges of the film close to the Plateau borders are more susceptible to rupture that the center of the film.

  20. Preface: Thin films of molecular organic materials

    NASA Astrophysics Data System (ADS)

    Fraxedas, J.

    2008-03-01

    This special issue is devoted to thin films of molecular organic materials and its aim is to assemble numerous different aspects of this topic in order to reach a wide scientific audience. Under the term 'thin films', structures with thicknesses spanning from one monolayer or less up to several micrometers are included. In order to narrow down this relaxed definition (how thin is thin?) I suggest joining the stream that makes a distinction according to the length scale involved, separating nanometer-thick films from micrometer-thick films. While the physical properties of micrometer-thick films tend to mimic those of bulk materials, in the low nanometer regime new structures (e.g., crystallographic and substrate-induced phases) and properties are found. However, one has to bear in mind that some properties of micrometer-thick films are really confined to the film/substrate interface (e.g. charge injection), and are thus of nanometer nature. Supported in this dimensionality framework, this issue covers the most ideal and model 0D case, a single molecule on a surface, through to the more application-oriented 3D case, placing special emphasis on the fascinating 2D domain that is monolayer assembly. Thus, many aspects will be reviewed, such as single molecules, self-organization, monolayer regime, chirality, growth, physical properties and applications. This issue has been intentionally restricted to small molecules, thus leaving out polymers and biomolecules, because for small molecules it is easier to establish structure--property relationships. Traditionally, the preparation of thin films of molecular organic materials has been considered as a secondary, lower-ranked part of the more general field of this class of materials. The coating of diverse surfaces such as silicon, inorganic and organic single crystals, chemically modified substrates, polymers, etc., with interesting molecules was driven by the potential applications of such molecular materials

  1. Influence of thin metal as a top electrode on the characteristics of P-I-N a- Si:H solar cells

    SciTech Connect

    Han, M.; Anderson, W.A.; Lahri, R.; Coleman, J.

    1981-04-01

    Hydrogenated amorphous silicon (a-Si:H) p-n junction solar cells have been fabricated which utilize various metals (Cr, Cu, Al, Pd, Ag) as a top electrode. Experimental and theoretical analysis of photovolatic performance in a-Si:H solar cells as a function of resistivity, optical transmittance, and work function of thin metal films are presented. Metal work function changes the effective built-in potential of p-n junction diodes. Furthermore, a lower work function metal forms a good Ohmic contact for substrate --P/sup +/-I-N/sup +/-- electrode cells, and high work function metals improve V/sub oc/ of substrate -N-I-P cells. Typical V/sub o/c values are 760 mV with Cr--, Cu--, and Al--N-I-P--stainless steel (SS), 700 mV with Pd--N-I-P-SS, 600 mV with Pd--P-I-N-SS, and 540 mV with Cr--P-I-N-SS. J/sub sc/ is strongly dependent on transmittance and resistivity of the metal films. Fill factor is independent of the choice of a top electrode. An efficient of 2% has been obtained on a 2 cm/sup 2/ solar cell.

  2. Preparation of thin polymer films for infrared reaction rate studies

    NASA Technical Reports Server (NTRS)

    Garrard, G. G.; Houston, D. W.

    1970-01-01

    Procedure for preparing thin films for infrared spectrophotometric analysis involves pressing of a neat mixture of reactants between nonreactive thin polymer films with noninterfering absorption bands. Pressing is done under a pressure that gives desirable thickness. Following this process, the film sandwich is cut to accommodate the laboratory instrument.

  3. ON THE ANALYSIS OF SPECTRA IN TRANSMISSION THROUGH THIN FILMS,

    DTIC Science & Technology

    Reprint: On the analysis of spectra in transmission through thin films . A technique to investigate the adequacy of the damped harmonicoscillator...model for IR absorption in thin films . Procedure for extracting material parameters and film thickness from the transmission curve.

  4. Bismuth thin films obtained by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Flores, Teresa; Arronte, Miguel; Rodriguez, Eugenio; Ponce, Luis; Alonso, J. C.; Garcia, C.; Fernandez, M.; Haro, E.

    1999-07-01

    In the present work Bi thin films were obtained by Pulsed Laser Deposition, using Nd:YAG lasers. The films were characterized by optical microscopy. Raman spectroscopy and X-rays diffraction. It was accomplished the real time spectral emission characterization of the plasma generated during the laser evaporation process. Highly oriented thin films were obtained.

  5. Properties of amorphous silicon thin films grown in square wave modulated silane rf discharges

    NASA Astrophysics Data System (ADS)

    Andújar, J. L.; Bertran, E.; Canillas, A.; Campmany, J.; Serra, J.; Roch, C.; Lloret, A.

    1992-02-01

    Hydrogenated amorphous silicon (a-Si:H) thin films have been obtained from pure SiH4 rf discharges by using the square wave modulation (SQWM) method. Film properties have been studied by means of spectroellipsometry, thermal desorption spectrometry, photothermal deflection spectroscopy and electrical conductivity measurements, as a function of the modulation frequency of the rf power amplitude (0.2-4000 Hz). The films deposited at frequencies about 1 kHz show the best structural and optoelectronic characteristics. Based upon the experimental results, a qualitative model is presented, which points up the importance of plasma negative ions in the deposition of a-Si:H from SQWM rf discharges through their influence on powder particle formation.

  6. Characterization of intrinsic a-Si:H films prepared by inductively coupled plasma chemical vapor deposition for solar cell applications.

    PubMed

    Jeong, Chaehwan; Boo, Seongjae; Jeon, Minsung; Kamisako, Koichi

    2007-11-01

    The hydrogenated amorphous silicon (a-Si:H) films, which can be used as the passivation or absorption layer of solar cells, were prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD) and their characteristics were studied. Deposition process of a-Si:H films was performed by varying the parameters, gas ratio (H2/SiH4), radio frequency (RF) power and substrate temperature, while a working pressure was fixed at 70 m Torr. Their characteristics were studied by measuring thickness, optical bandgap (eV), photosensitivity, bond structure and surface roughness. When the RF power and substrate temperature were 300 watt and 200 degrees C, respectively, optical bandgap and photosensitivity, similar to the intrinsic a-Si:H film, were obtained. The Si-H stretching mode at 2000 cm(-1), which means a good quality of films, was found at all conditions. Although the RF power increased up to 400 watt, average of surface roughness got better, compared to a-Si:H films deposited by the conventional PECVD method. These results show the potential for developing the solar cells using ICP-CVD, which have the relatively less damage of plasma.

  7. Intrinsic instability of thin liquid films on nanostructured surfaces

    NASA Astrophysics Data System (ADS)

    Sun, L.; Hu, H.; Rokoni, A. A.; Sun, Y.

    2016-09-01

    The instability of a thin liquid film on nanostructures is not well understood but is important in liquid-vapor two-phase heat transfer (e.g., thin film evaporation and boiling), lubrication, and nanomanufacturing. In thin film evaporation, the comparison between the non-evaporating film thickness and the critical film breakup thickness determines the stability of the film: the film becomes unstable when the critical film breakup thickness is larger than the non-evaporating film thickness. In this study, a closed-form model is developed to predict the critical breakup thickness of a thin liquid film on 2D periodic nanostructures based on the minimization of system free energy in the limit of a liquid monolayer. Molecular dynamics simulations are performed for water thin films on square nanostructures of varying depth and wettability, and the simulations agree with the model predictions. The results show that the critical film breakup thickness increases with the nanostructure depth and the surface wettability. The model developed here enables the prediction of the minimum film thickness for a stable thin film evaporation on a given nanostructure.

  8. Intrinsic instability of thin liquid films on nanostructured surfaces

    NASA Astrophysics Data System (ADS)

    Rokoni, Arif; Hu, Han; Sun, Liyong; Sun, Ying

    2016-11-01

    The instability of a thin liquid film on nanostructures is not well understood but is important in liquid-vapor two-phase heat transfer (e.g., thin film evaporation and boiling), lubrication, and nanomanufacturing. In thin film evaporation, the comparison between the non-evaporating film thickness and the critical film breakup thickness determines the stability of the film: the film becomes unstable when the critical film breakup thickness is larger than the non-evaporating film thickness. In this study, a closed-form model is developed to predict the critical breakup thickness of a thin liquid film on 2D periodic nanostructures based on minimization of system free energy in the limit of a liquid monolayer. Molecular dynamics simulations are performed for water thin films on square nanostructures of varying depth and wettability and the simulations agree with the model predictions. The results show that the critical film breakup thickness increases with the nanostructure depth and the surface wettability. The model developed here enables the prediction of the minimum film thickness for stable thin film evaporation on a given nanostructure.

  9. Enhanced photocurrent in thin-film amorphous silicon solar cells via shape controlled three-dimensional nanostructures.

    PubMed

    Hilali, Mohamed M; Yang, Shuqiang; Miller, Mike; Xu, Frank; Banerjee, Sanjay; Sreenivasan, S V

    2012-10-12

    In this paper, we have explored manufacturable approaches to sub-wavelength controlled three-dimensional (3D) nano-patterns with the goal of significantly enhancing the photocurrent in amorphous silicon solar cells. Here we demonstrate efficiency enhancement of about 50% over typical flat a-Si thin-film solar cells, and report an enhancement of 20% in optical absorption over Asahi textured glass by fabricating sub-wavelength nano-patterned a-Si on glass substrates. External quantum efficiency showed superior results for the 3D nano-patterned thin-film solar cells due to enhancement of broadband optical absorption. The results further indicate that this enhanced light trapping is achieved with minimal parasitic absorption losses in the deposited transparent conductive oxide for the nano-patterned substrate thin-film amorphous silicon solar cell configuration. Optical simulations are in good agreement with experimental results, and also show a significant enhancement in optical absorption, quantum efficiency and photocurrent.

  10. Gadolinium thin films as benchmark for magneto-caloric thin films

    NASA Astrophysics Data System (ADS)

    Helmich, Lars; Bartke, Marianne; Teichert, Niclas; Schleicher, Benjamin; Fähler, Sebastian; Hütten, Andreas

    2017-05-01

    We report on the preparation of Gadolinium thin films by means of sputter deposition on Silicon Oxide wafers. A series of samples with different buffer layers and various substrate temperatures has been produced. The film on an amorphous Tantalum buffer deposited at 773 K shows the highest increase of magnetization during the phase transition at the Curie temperature. Further detailed analysis of the magnetic properties has been conducted by VSM.

  11. Self-Limited Growth in Pentacene Thin Films

    PubMed Central

    2017-01-01

    Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought. PMID:28287698

  12. Metallic Thin-Film Bonding and Alloy Generation

    NASA Technical Reports Server (NTRS)

    Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Peotter, Brian S. (Inventor); Droppers, Lloyd (Inventor)

    2016-01-01

    Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

  13. Low-Cost Detection of Thin Film Stress during Fabrication

    NASA Technical Reports Server (NTRS)

    Nabors, Sammy A.

    2015-01-01

    NASA's Marshall Space Flight Center has developed a simple, cost-effective optical method for thin film stress measurements during growth and/or subsequent annealing processes. Stress arising in thin film fabrication presents production challenges for electronic devices, sensors, and optical coatings; it can lead to substrate distortion and deformation, impacting the performance of thin film products. NASA's technique measures in-situ stress using a simple, noncontact fiber optic probe in the thin film vacuum deposition chamber. This enables real-time monitoring of stress during the fabrication process and allows for efficient control of deposition process parameters. By modifying process parameters in real time during fabrication, thin film stress can be optimized or controlled, improving thin film product performance.

  14. Hole transport in porphyrin thin films

    NASA Astrophysics Data System (ADS)

    Savenije, Tom J.; Goossens, Albert

    2001-09-01

    Hole transport in p-type organic semiconductors is a key issue in the development of organic electronic devices. Here the diffusion of holes in porphyrin thin films is investigated. Smooth anatase TiO2 films are coated with an amorphous thin film of zinc-tetra(4-carboxyphenyl) porphyrin (ZnTCPP) molecules acting as sensitizer. Optical excitation of the porphyrin stimulates the injection of electrons into the conduction band of TiO2. The remaining holes migrate towards the back electrode where they are collected. Current-voltage and capacitance-voltage analysis reveal that the TiO2/ZnTCPP system can be regarded as an n-p heterojunction, with a donor density of ND=2.0×1016 cm-3 for TiO2 and an acceptor density NA=4.0×1017 cm-3 for ZnTCPP films. The acceptor density in porphyrin films increases to 1.3×1018 cm-3 upon irradiation with 100-mW cm-2 white light. Intensity-modulated photocurrent spectroscopy, in which ac-modulated irradiation is applied, is used to measure the transit times of the photogenerated holes through the films. A reverse voltage bias hardly affects the transit time, whereas a small forward bias yields a decrease of the transit time by two orders of magnitude. Application of background irradiation also reduces the transit time considerably. These observations are explained by the presence of energy fluctuation of the highest-occupied molecular orbital level in the porphyrin films due to a dispersed conformational state of the molecules in the amorphous films. This leads to energetically distributed hole traps. Under short circuit and reverse bias, photogenerated holes reside most of the time in deep traps and their diffusivity is only 7×10-11 cm2 s-1. Deep traps are filled by application of a forward bias and by optical irradiation leading to reduction of the transit time and a concomitant increase of the diffusivity up to 2×10-7 cm2 s-1.

  15. Physical Properties of Thin Film Semiconducting Materials

    NASA Astrophysics Data System (ADS)

    Bouras, N.; Djebbouri, M.; Outemzabet, R.; Sali, S.; Zerrouki, H.; Zouaoui, A.; Kesri, N.

    2005-10-01

    The physics and chemistry of semiconducting materials is a continuous question of debate. We can find a large stock of well-known properties but at the same time, many things are not understood. In recent years, porous silicon (PS-Si), diselenide of copper and indium (CuInSe2 or CIS) and metal oxide semiconductors like tin oxide (SnO2) and zinc oxide (ZnO) have been subjected to extensive studies because of the rising interest their potential applications in fields such as electronic components, solar panels, catalysis, gas sensors, in biocompatible materials, in Li-based batteries, in new generation of MOSFETS. Bulk structure and surface and interface properties play important roles in all of these applications. A deeper understanding of these fundamental properties would impact largely on technological application performances. In our laboratory, thin films of undoped and antimony-doped films of tin oxide have been deposited by chemical vapor deposition. Spray pyrolysis was used for ZnO. CIS was prepared by flash evaporation or close-space vapor transport. Some of the deposition parameters have been varied, such as substrate temperature, time of deposition (or anodization), and molar concentration of bath preparation. For some samples, thermal annealing was carried out under oxygen (or air), under nitrogen gas and under vacuum. Deposition and post-deposition parameters are known to strongly influence film structure and electrical resistivity. We investigated the influence of film thickness and thermal annealing on structural optical and electrical properties of the films. Examination of SnO2 by x-ray diffraction showed that the main films are polycrystalline with rutile structure. The x-ray spectra of ZnO indicated a hexagonal wurtzite structure. Characterizations of CIS films with compositional analysis, x-ray diffraction, scanning microscopy, spectrophotometry, and photoluminescence were carried out.

  16. Pulsed laser deposition of pepsin thin films

    NASA Astrophysics Data System (ADS)

    Kecskeméti, G.; Kresz, N.; Smausz, T.; Hopp, B.; Nógrádi, A.

    2005-07-01

    Pulsed laser deposition (PLD) of organic and biological thin films has been extensively studied due to its importance in medical applications among others. Our investigations and results on PLD of a digestion catalyzing enzyme, pepsin, are presented. Targets pressed from pepsin powder were ablated with pulses of an ArF excimer laser ( λ = 193 nm, FWHM = 30 ns), the applied fluence was varied between 0.24 and 5.1 J/cm 2. The pressure in the PLD chamber was 2.7 × 10 -3 Pa. The thin layers were deposited onto glass and KBr substrates. Our IR spectroscopic measurements proved that the chemical composition of deposited thin films is similar to that of the target material deposited at 0.5 and 1.3 J/cm 2. The protein digesting capacity of the transferred pepsin was tested by adapting a modified "protein cube" method. Dissolution of the ovalbumin sections proved that the deposited layers consisted of catalytically active pepsin.

  17. Depth distributions of hydrogen and intrinsic stress in a-Si:H films prepared from hydrogen-diluted silane

    NASA Astrophysics Data System (ADS)

    Danesh, P.; Pantchev, B.; Grambole, D.; Schmidt, B.

    2001-09-01

    The thickness dependencies and depth distributions of hydrogen and intrinsic mechanical stress are studied for a-Si:H films prepared with 10% silane in hydrogen. Nuclear reaction analysis has been used to establish the total concentration of the incorporated hydrogen. It has been shown that the hydrogen distribution in the films is uniform and does not depend on the film thickness. On the contrary, the intrinsic stress depends on the film thickness and has a nonuniform depth distribution, as the stress increase linearly in the direction from the substrate/film interface to the film surface. The obtained results are discussed in view of the hydrogen-related processes and structural improvement of the silicon network during the film growth.

  18. Onset of Plasticity in Thin Polystyrene Films

    NASA Astrophysics Data System (ADS)

    Gurmessa, Bekele J.; Croll, Andrew B.

    2013-02-01

    Polymer glasses have numerous advantageous mechanical properties in comparison to other materials. One of the most useful is the high degree of toughness that can be achieved due to significant yield occurring in the material. Remarkably, the onset of plasticity in polymeric materials is very poorly quantified, despite its importance as the ultimate limit of purely elastic behavior. Here, we report the results of a novel experiment which is extremely sensitive to the onset of yield and discuss its impact on measurement and elastic theory. In particular, we use an elastic instability to locally bend and impart a local tensile stress in a thin, glassy polystyrene film, and directly measure the resulting residual stress caused by the bending. We show that plastic failure is initiated at extremely low strains, of the order 10-3 for polystyrene. Not only is this critical strain found to be small in comparison to bulk measurement, we show that it is influenced by thin film confinement—leading to an increase in the critical strain for plastic failure as film thickness approaches zero.

  19. PZT Thin Film Piezoelectric Traveling Wave Motor

    NASA Technical Reports Server (NTRS)

    Shen, Dexin; Zhang, Baoan; Yang, Genqing; Jiao, Jiwei; Lu, Jianguo; Wang, Weiyuan

    1995-01-01

    With the development of micro-electro-mechanical systems (MEMS), its various applications are attracting more and more attention. Among MEMS, micro motors, electrostatic and electromagnetic, are the typical and important ones. As an alternative approach, the piezoelectric traveling wave micro motor, based on thin film material and integrated circuit technologies, circumvents many of the drawbacks of the above mentioned two types of motors and displays distinct advantages. In this paper we report on a lead-zirconate-titanate (PZT) piezoelectric thin film traveling wave motor. The PZT film with a thickness of 150 micrometers and a diameter of 8 mm was first deposited onto a metal substrate as the stator material. Then, eight sections were patterned to form the stator electrodes. The rotor had an 8 kHz frequency power supply. The rotation speed of the motor is 100 rpm. The relationship of the friction between the stator and the rotor and the structure of the rotor on rotation were also studied.

  20. Localized resistive regions in superconducting thin films

    SciTech Connect

    Ivanchenko, Y.; Mikheenko, P.

    1982-02-01

    A phenomenological model for resistive domains produced in semiconducting thin films on passage of a transport current through them is presented. The resistivity is pronouncedly nonequilibrium and is due to a magnetic flux through the specimen. The domains appear at sites of edge defects or inhomogeneities whose role reduces to lowering of the potential barrier to the entrance of the vortices. The kinetics of the flux in the specimen and the dissipation caused by it are considered. The heat-balance equation for a film with a domain is solved and the current-voltage characteristic (CVC) is calculated. Some quantitative features of the CVC are predicted, viz., absence of hysteresis at thermostat temperature T/sub 0/ close to the superconductor critical temperature T/sub c/, the presence of a voltage discontinuity under given-current conditions, passage of the differential conductivity sigma(T/sub 0/) of the initial resistive part of the CVC through a maximum, the presence of an excess current in the resistive part on the forward CVC after the temperature instability sets in, and others. Results are presented of an experimental verification of the model by measuring the CVC of thin indium films at thermostat temperatures zeta/sub 0/ = 1-T/sub 0//T/sub c/ between 10/sup -4/ and 10/sup -1/. The experimental and theoretical results are compared qualitatively and quantitatively.