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Sample records for ablation molecular beam

  1. Delivery of large molecular protein using flat and short microneedles prepared using focused ion beam (FIB) as a skin ablation tool.

    PubMed

    Cheung, Karmen; West, Geoff; Das, Diganta Bhusan

    2015-08-01

    Many studies have been reported in the literature on the effects of various geometries and lengths of microneedles (MNs) on transdermal drug delivery using a variety of drug molecules. In particular, sharp-tipped MNs have been used to disrupt the top layer of the skin, namely, stratum corneum (SC). It has also been shown that short- and flat-tipped MNs can pierce the SC and they have the potential to increase drug permeability. However, there is little work that explores MNs as a skin ablative tool with a view to increasing skin permeability. To address this point, well-defined small patterns (size of individual pattern 10-20 μm) on the tip of flat MN (tip radius of individual MN ∼250 μm) were created and their effects evaluated on the permeability of bovine serum albumin (BSA), which is chosen as a model drug of high molecular weight. The patterns on the tip of flat MN act as rough surfaces (e.g. like sand paper) which when applied on the surface of the skin ablate the SC layer. Focused ion beam (FIB) has been used as the fabrication technique for the MNs. The permeability data are then compared with the other data for flat- and sharp-tipped MN. The permeability data from passive diffusion experiments are used as the reference case. The exact number of MNs or patterns in the flat and patterned MN patches is not considered as important as they have not been designed to pierce the skin. However, this is an important consideration in the case of sharp MNs as they pierce and create cavities in the skin. It is found that the delivery of BSA with the fabricated flat and patterned MNs gave similar but somewhat lower drug permeation profile in comparison to the sharp MNs. Passive diffusion showed no permeation, as would be expected due to the large size of the chosen molecule.

  2. Hydrodynamic Efficiency of Ablation Propulsion with Pulsed Ion Beam

    SciTech Connect

    Buttapeng, Chainarong; Yazawa, Masaru; Harada, Nobuhiro; Suematsu, Hisayuki; Jiang Weihua; Yatsui, Kiyoshi

    2006-05-02

    This paper presents the hydrodynamic efficiency of ablation plasma produced by pulsed ion beam on the basis of the ion beam-target interaction. We used a one-dimensional hydrodynamic fluid compressible to study the physics involved namely an ablation acceleration behavior and analyzed it as a rocketlike model in order to investigate its hydrodynamic variables for propulsion applications. These variables were estimated by the concept of ablation driven implosion in terms of ablated mass fraction, implosion efficiency, and hydrodynamic energy conversion. Herein, the energy conversion efficiency of 17.5% was achieved. In addition, the results show maximum energy efficiency of the ablation process (ablation efficiency) of 67% meaning the efficiency with which pulsed ion beam energy-ablation plasma conversion. The effects of ion beam energy deposition depth to hydrodynamic efficiency were briefly discussed. Further, an evaluation of propulsive force with high specific impulse of 4000s, total impulse of 34mN and momentum to energy ratio in the range of {mu}N/W was also analyzed.

  3. Performance and Controllability of Pulsed Ion Beam Ablation Propulsion

    SciTech Connect

    Yazawa, Masaru; Buttapeng, Chainarong; Harada, Nobuhiro; Suematsu, Hisayuki; Jiang Weihua; Yatsui, Kiyoshi

    2006-05-02

    We propose novel propulsion driven by ablation plasma pressures produced by the irradiation of pulsed ion beams onto a propellant. The ion beam ablation propulsion demonstrates by a thin foil (50 {mu}mt), and the flyer velocity of 7.7 km/s at the ion beam energy density of 2 kJ/cm2 adopted by using the Time-of-flight method is observed numerically and experimentally. We estimate the performance of the ion beam ablation propulsion as specific impulse of 3600 s and impulse bit density of 1700 Ns/m2 obtained from the demonstration results. In the numerical analysis, a one-dimensional hydrodynamic model with ion beam energy depositions is used. The control of the ion beam kinetic energy is only improvement of the performance but also propellant consumption. The spacecraft driven by the ion beam ablation provides high performance efficiency with short-pulsed ion beam irradiation. The numerical results of the advanced model explained latent heat and real gas equation of state agreed well with experimental ones over a wide range of the incident ion beam energy density.

  4. Assessment of liver ablation using cone beam computed tomography

    PubMed Central

    Abdel-Rehim, Mohamed; Ronot, Maxime; Sibert, Annie; Vilgrain, Valérie

    2015-01-01

    AIM: To investigate the feasibility and accuracy of cone beam computed tomography (CBCT) in assessing the ablation zone after liver tumor ablation. METHODS: Twenty-three patients (17 men and 6 women, range: 45-85 years old, mean age 65 years) with malignant liver tumors underwent ultrasound-guided percutaneous tumor ablation [radiofrequency (n = 14), microwave (n = 9)] followed by intravenous contrast-enhanced CBCT. Baseline multidetector computed tomography (MDCT) and peri-procedural CBCT images were compared. CBCT image quality was assessed as poor, good, or excellent. Image fusion was performed to assess tumor coverage, and quality of fusion was rated as bad, good, or excellent. Ablation zone volumes on peri-procedural CBCT and post-procedural MDCT were compared using the non-parametric paired Wilcoxon t-test. RESULTS: Rate of primary ablation effectiveness was 100%. There were no complications related to ablation. Local tumor recurrence and new liver tumors were found 3 mo after initial treatment in one patient (4%). The ablation zone was identified in 21/23 (91.3%) patients on CBCT. The fusion of baseline MDCT and peri-procedural CBCT images was feasible in all patients and showed satisfactory tumor coverage (at least 5-mm margin). CBCT image quality was poor, good, and excellent in 2 (9%), 8 (35%), and 13 (56%), patients respectively. Registration quality between peri-procedural CBCT and post-procedural MDCT images was good to excellent in 17/23 (74%) patients. The median ablation volume on peri-procedural CBCT and post-procedural MDCT was 30 cm3 (range: 4-95 cm3) and 30 cm3 (range: 4-124 cm3), respectively (P-value > 0.2). There was a good correlation (r = 0.79) between the volumes of the two techniques. CONCLUSION: Contrast-enhanced CBCT after tumor ablation of the liver allows early assessment of the ablation zone. PMID:25593467

  5. Beam Delivery System For UV Laser Ablation Of The Cornea

    NASA Astrophysics Data System (ADS)

    Yoder, P. R.; Telfair, W. B.; Warner, J. W.; Martin, C. A.; Bennett, P. S.

    1988-06-01

    We describe an electro-optical apparatus capable of delivering a homogenized, intensity-contoured 193 nm wavelength laser beam to the anterior surface of the cornea. Beam fluence is adequate to produce controlled ablation over areas as large as 7 mm diameter. Preliminary experimental results demonstrating recontouring of the corneal surface as a means of correcting myopia are presented. Means to be used for reducing hyperopia and astigmatism also are described.

  6. CT thermometry for cone-beam CT guided ablation

    NASA Astrophysics Data System (ADS)

    DeStefano, Zachary; Abi-Jaoudeh, Nadine; Li, Ming; Wood, Bradford J.; Summers, Ronald M.; Yao, Jianhua

    2016-03-01

    Monitoring temperature during a cone-beam CT (CBCT) guided ablation procedure is important for prevention of over-treatment and under-treatment. In order to accomplish ideal temperature monitoring, a thermometry map must be generated. Previously, this was attempted using CBCT scans of a pig shoulder undergoing ablation.1 We are extending this work by using CBCT scans of real patients and incorporating more processing steps. We register the scans before comparing them due to the movement and deformation of organs. We then automatically locate the needle tip and the ablation zone. We employ a robust change metric due to image noise and artifacts. This change metric takes windows around each pixel and uses an equation inspired by Time Delay Analysis to calculate the error between windows with the assumption that there is an ideal spatial offset. Once the change map is generated, we correlate change data with measured temperature data at the key points in the region. This allows us to transform our change map into a thermal map. This thermal map is then able to provide an estimate as to the size and temperature of the ablation zone. We evaluated our procedure on a data set of 12 patients who had a total of 24 ablation procedures performed. We were able to generate reasonable thermal maps with varying degrees of accuracy. The average error ranged from 2.7 to 16.2 degrees Celsius. In addition to providing estimates of the size of the ablation zone for surgical guidance, 3D visualizations of the ablation zone and needle are also produced.

  7. Molecular-beam scattering

    SciTech Connect

    Vernon, M.F.

    1983-07-01

    The molecular-beam technique has been used in three different experimental arrangements to study a wide range of inter-atomic and molecular forces. Chapter 1 reports results of a low-energy (0.2 kcal/mole) elastic-scattering study of the He-Ar pair potential. The purpose of the study was to accurately characterize the shape of the potential in the well region, by scattering slow He atoms produced by expanding a mixture of He in N/sub 2/ from a cooled nozzle. Chapter 2 contains measurements of the vibrational predissociation spectra and product translational energy for clusters of water, benzene, and ammonia. The experiments show that most of the product energy remains in the internal molecular motions. Chapter 3 presents measurements of the reaction Na + HCl ..-->.. NaCl + H at collision energies of 5.38 and 19.4 kcal/mole. This is the first study to resolve both scattering angle and velocity for the reaction of a short lived (16 nsec) electronic excited state. Descriptions are given of computer programs written to analyze molecular-beam expansions to extract information characterizing their velocity distributions, and to calculate accurate laboratory elastic-scattering differential cross sections accounting for the finite apparatus resolution. Experimental results which attempted to determine the efficiency of optically pumping the Li(2/sup 2/P/sub 3/2/) and Na(3/sup 2/P/sub 3/2/) excited states are given. A simple three-level model for predicting the steady-state fraction of atoms in the excited state is included.

  8. Molecular-beam scattering

    NASA Astrophysics Data System (ADS)

    Vernon, M. F.

    1983-07-01

    The molecular-beam technique has been used in three different experimental arrangements to study a wide range of inter-atomic and molecular forces. Chapter 1 reports results of a low-energy (0.2 kcal/mole) elastic-scattering study of the He-Ar pair potential. The purpose of the study was to accurately characterize the shape of the potential in the well region, by scattering slow He atoms produced by expanding a mixture of He in N2 from a cooled nozzle. Chapter 2 contains measurements of the vibrational predissociation spectra and product translational energy for clusters of water, benzene, and ammonia. The experiments show that most of the product energy remains in the internal molecular motions. Chapter 3 presents measurements of the reaction Na + HC1 (FEMALE) NAC1 + H at collision energies of 5.38 and 19.4 kcal/mole. This is the first study to resolve both scattering angle and velocity for the reaction of a short lived (16 nsec) electronic excited state. Descriptions are given of computer programs written to analyze molecular-beam expansions to extract information characterizing their velocity distributions, and to calculate accurate laboratory elastic-scattering differential cross sections accounting for the finite apparatus resolution. Experimental results which attempted to determine the efficiency of optically pumping the Li(2(2)P/sub 3/2/) and Na(3(2)P/sub 3/2) excited states are given. A simple three-level model for predicting the steady-state fraction of atoms in the excited state is included.

  9. Rare event molecular dynamics simulations of plasma induced surface ablation

    SciTech Connect

    Sharia, Onise; Holzgrafe, Jeffrey; Park, Nayoung; Henkelman, Graeme

    2014-08-21

    The interaction of thermal Ar plasma particles with Si and W surfaces is modeled using classical molecular dynamics (MD) simulations. At plasma energies above the threshold for ablation, the ablation yield can be calculated directly from MD. For plasma energies below threshold, the ablation yield becomes exponentially low, and direct MD simulations are inefficient. Instead, we propose an integration method where the yield is calculated as a function of the Ar incident kinetic energy. Subsequent integration with a Boltzmann distribution at the temperature of interest gives the thermal ablation yield. At low plasma temperatures, the ablation yield follows an Arrhenius form in which the activation energy is shown to be the threshold energy for ablation. Interestingly, equilibrium material properties, including the surface and bulk cohesive energy, are not good predictors of the threshold energy for ablation. The surface vacancy formation energy is better, but is still not a quantitative predictor. An analysis of the trajectories near threshold shows that ablation occurs by different mechanisms on different material surfaces, and both the mechanism and the binding of surface atoms determine the threshold energy.

  10. Rare event molecular dynamics simulations of plasma induced surface ablation.

    PubMed

    Sharia, Onise; Holzgrafe, Jeffrey; Park, Nayoung; Henkelman, Graeme

    2014-08-21

    The interaction of thermal Ar plasma particles with Si and W surfaces is modeled using classical molecular dynamics (MD) simulations. At plasma energies above the threshold for ablation, the ablation yield can be calculated directly from MD. For plasma energies below threshold, the ablation yield becomes exponentially low, and direct MD simulations are inefficient. Instead, we propose an integration method where the yield is calculated as a function of the Ar incident kinetic energy. Subsequent integration with a Boltzmann distribution at the temperature of interest gives the thermal ablation yield. At low plasma temperatures, the ablation yield follows an Arrhenius form in which the activation energy is shown to be the threshold energy for ablation. Interestingly, equilibrium material properties, including the surface and bulk cohesive energy, are not good predictors of the threshold energy for ablation. The surface vacancy formation energy is better, but is still not a quantitative predictor. An analysis of the trajectories near threshold shows that ablation occurs by different mechanisms on different material surfaces, and both the mechanism and the binding of surface atoms determine the threshold energy. PMID:25149805

  11. An experimental investigation of the damping contribution of an elastomeric ablator on aluminum beams

    NASA Technical Reports Server (NTRS)

    Howell, W. E.

    1974-01-01

    Damping results are presented for an elastometric ablation material bonded to an aluminum alloy substrate. Tests were conducted on aluminum beams 0.159, 0.318, and 0.476 cm thick, and with and without an ablator. Ablation-material thickness varied from 0.159 to 0.953 cm. Comparative damping data were obtained by using variations of the free-free beam technique with strain gages and piezoelectric transducers. Of the two test arrangements employed, the technique using strain gages produced results that indicated less restraint of the beams. Ablation material, in thicknesses less than 1 cm, substantially increased the damping parameter of the aluminum beams.

  12. Photoelectron photoion molecular beam spectroscopy

    SciTech Connect

    Trevor, D.J.

    1980-12-01

    The use of supersonic molecular beams in photoionization mass spectroscopy and photoelectron spectroscopy to assist in the understanding of photoexcitation in the vacuum ultraviolet is described. Rotational relaxation and condensation due to supersonic expansion were shown to offer new possibilities for molecular photoionization studies. Molecular beam photoionization mass spectroscopy has been extended above 21 eV photon energy by the use of Stanford Synchrotron Radiation Laboratory (SSRL) facilities. Design considerations are discussed that have advanced the state-of-the-art in high resolution vuv photoelectron spectroscopy. To extend gas-phase studies to 160 eV photon energy, a windowless vuv-xuv beam line design is proposed.

  13. Chopped molecular beam multiplexing system

    NASA Technical Reports Server (NTRS)

    Adams, Billy R. (Inventor)

    1986-01-01

    The integration of a chopped molecular beam mass spectrometer with a time multiplexing system is described. The chopping of the molecular beam is synchronized with the time intervals by a phase detector and a synchronous motor. Arithmetic means are generated for phase shifting the chopper with respect to the multiplexer. A four channel amplifier provides the capacity to independently vary the baseline and amplitude in each channel of the multiplexing system.

  14. Laser ablation of silicon induced by a femtosecond optical vortex beam.

    PubMed

    Nivas, Jijil J J; Shutong, He; Anoop, K K; Rubano, A; Fittipaldi, R; Vecchione, A; Paparo, D; Marrucci, L; Bruzzese, R; Amoruso, S

    2015-10-15

    We investigate laser ablation of crystalline silicon induced by a femtosecond optical vortex beam, addressing how beam properties can be obtained by analyzing the ablation crater. The morphology of the surface structures formed in the annular crater surface allows direct visualization of the beam polarization, while analysis of the crater size provides beam spot parameters. We also determine the diverse threshold fluences for the formation of various complex microstructures generated within the annular laser spot on the silicon sample. Our analysis indicates an incubation behavior of the threshold fluence as a function of the number of laser pulses, independent of the optical vortex polarization, in weak focusing conditions. PMID:26469576

  15. Tracing the plasma interactions for pulsed reactive crossed-beam laser ablation

    SciTech Connect

    Chen, Jikun; Stender, Dieter; Pichler, Markus; Pergolesi, Daniele; Schneider, Christof W.; Wokaun, Alexander; Lippert, Thomas; Döbeli, Max

    2015-10-28

    Pulsed reactive crossed-beam laser ablation is an effective technique to govern the chemical activity of plasma species and background molecules during pulsed laser deposition. Instead of using a constant background pressure, a gas pulse with a reactive gas, synchronized with the laser beam, is injected into vacuum or a low background pressure near the ablated area of the target. It intercepts the initially generated plasma plume, thereby enhancing the physicochemical interactions between the gaseous environment and the plasma species. For this study, kinetic energy resolved mass-spectrometry and time-resolved plasma imaging were used to study the physicochemical processes occurring during the reactive crossed beam laser ablation of a partially {sup 18}O substituted La{sub 0.6}Sr{sub 0.4}MnO{sub 3} target using oxygen as gas pulse. The characteristics of the ablated plasma are compared with those observed during pulsed laser deposition in different oxygen background pressures.

  16. Growth of highly doped p-type ZnTe films by pulsed laser ablation in molecular nitrogen

    SciTech Connect

    Lowndes, D.H.; Rouleau, C.M.; Budai, J.D.; Poker, D.B.; Geohegan, D.B.; Zhu, Shen; McCamy, J.W.; Puretzky, A.

    1995-04-01

    Highly p-doped ZnTe films have been grown on semi-insulating GaAs (001) substrates by pulsed-laser ablation (PLA) of a stoichiometric ZnTe target in a high-purity N{sub 2} ambient without the use of any assisting (DC or AC) plasma source. Free hole concentrations in the mid-10{sup 19} cm{sup {minus}3} to > 10{sup 20} cm{sup {minus}3} range were obtained for a range of nitrogen pressures The maximum hole concentration equals the highest hole doping reported to date for any wide band gap II-VI compound. The highest hole mobilities were attained for nitrogen pressures of 50--100 mTorr ({approximately}6.5-13 Pa). Unlike recent experiments in which atomic nitrogen beams, extracted from RF and DC plasma sources, were used to produce p-type doping during molecular beam epitaxy deposition, spectroscopic measurements carried out during PLA of ZnTe in N{sub 2} do not reveal the presence of atomic nitrogen. This suggests that the high hole concentrations in laser ablated ZnTe are produced by a new and different mechanism, possibly energetic beam-induced reactions with excited molecular nitrogen adsorbed on the growing film surface, or transient formation of Zn-N complexes in the energetic ablation plume. This appears to be the first time that any wide band gap (Eg > 2 eV) II-VI compound (or other) semiconductor has been impurity-doped from the gas phase by laser ablation. In combination with the recent discovery that epitaxial ZnSe{sub l-x}S{sub x} films and heterostructures with continuously variable composition can be grown by ablation from a single target of fixed composition, these results appear to open the way to explore PLA growth and doping of compound semiconductors as a possible alternative to molecular beam epitaxy.

  17. The TriBeam system: Femtosecond laser ablation in situ SEM

    SciTech Connect

    Echlin, McLean P.; Straw, Marcus; Randolph, Steven; Filevich, Jorge; Pollock, Tresa M.

    2015-02-15

    Femtosecond laser ablation offers the unique ability to remove material at rates that are orders of magnitude faster than existing ion beam technologies with little or no associated damage. By combining ultrafast lasers with state-of-the-art electron microscopy equipment, we have developed a TriBeam system capable of targeted, in-situ tomography providing chemical, structural, and topographical information in three dimensions of near mm{sup 3} sized volumes. The origins, development, physics, current uses, and future potential for the TriBeam system are described in this tutorial review. - Graphical abstract: Display Omitted - Highlights: • An emerging tool, the TriBeam, for in situ femtosecond (fs) laser ablation is presented. • Fs laser ablation aided tomography at the mm{sup 3}-scale is demonstrated. • Fs laser induced deposition of Pt is demonstrated at sub-diffraction limit resolution. • Fs laser surface structuring is reviewed as well as micromachining applications.

  18. Molecular-Beam-Epitaxy Program

    NASA Technical Reports Server (NTRS)

    Sparks, Patricia D.

    1988-01-01

    Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.

  19. Flyer Acceleration by Pulsed Ion Beam Ablation and Application for Space Propulsion

    SciTech Connect

    Harada, Nobuhiro; Buttapeng, Chainarong; Yazawa, Masaru; Kashine, Kenji; Jiang Weihua; Yatsui, Kiyoshi

    2004-02-04

    Flyer acceleration by ablation plasma pressure produced by irradiation of intense pulsed ion beam has been studied. Acceleration process including expansion of ablation plasma was simulated based on fluid model. And interaction between incident pulsed ion beam and a flyer target was considered as accounting stopping power of it. In experiments, we used ETIGO-II intense pulsed ion beam generator with two kinds of diodes; 1) Magnetically Insulated Diode (MID, power densities of <100 J/cm2) and 2) Spherical-focused Plasma Focus Diode (SPFD, power densities of up to 4.3 kJ/cm2). Numerical results of accelerated flyer velocity agreed well with measured one over wide range of incident ion beam energy density. Flyer velocity of 5.6 km/s and ablation plasma pressure of 15 GPa was demonstrated by the present experiments. Acceleration of double-layer target consists of gold/aluminum was studied. For adequate layer thickness, such a flyer target could be much more accelerated than a single layer. Effect of waveform of ion beam was also examined. Parabolic waveform could accelerate more efficiently than rectangular waveform. Applicability of ablation propulsion was discussed. Specific impulse of 7000{approx}8000 seconds and time averaged thrust of up to 5000{approx}6000N can be expected. Their values can be controllable by changing power density of incident ion beam and pulse duration.

  20. Utilizing ablation of solids to characterize a focused soft X-ray laser beam

    NASA Astrophysics Data System (ADS)

    Chalupský, J.; Juha, L.; Kuba, J.; Hájková, V.; Cihelka, J.; Homer, P.; Kozlová, M.; Mocek, T.; Polan, J.; Rus, B.; Krzywinsky, J.; Sobierajski, R.; Wabnitz, H.; Feldhaus, J.; Tiedtke, K.; the, And

    2007-05-01

    An advanced time integrated method has been developed for soft X-ray pulsed laser beam characterization. A technique based on poly (methyl methacrylate) - PMMA laser induced ablation has been used for beam investigations of soft X-ray laser sources like FLASH (Free-electron LASer in Hamburg; formerly known as VUV FEL and/or TTF2 FEL) and plasma-based Ne-like Zn laser performed at PALS (Prague Asterix Laser System). For the interaction experiments reported here, the FLASH system provided ultra-short pulses (~10-fs) of 21.7-nm radiation. The PMMA ablation was also induced by plasma-based Ne-like Zn soft X-ray laser pumped by NIR beams at the PALS facility. This quasi-steady-state (QSS) soft X-ray laser provides 100-ps pulses of 21.2-nm radiation, i.e. at a wavelength very close to that of FLASH but with about 5,000 times longer pulses. In both cases, the PMMA samples were irradiated by a single shot with a focused beam under normal incidence conditions. Characteristics of ablated craters obtained with AFM (Atomic Force Microscope) and Nomarski microscopes were utilized for profile reconstruction and diameter determination of the focused laser beams ablating the PMMA surface.

  1. Laser ablation molecular isotopic spectrometry of carbon isotopes

    NASA Astrophysics Data System (ADS)

    Bol‧shakov, Alexander A.; Mao, Xianglei; Jain, Jinesh; McIntyre, Dustin L.; Russo, Richard E.

    2015-11-01

    Quantitative determination of carbon isotopes using Laser Ablation Molecular Isotopic Spectrometry (LAMIS) is described. Optical emission of diatomic molecules CN and C2 is used in these measurements. Two quantification approaches are presented: empirical calibration of spectra using a set of reference standards and numerical fitting of a simulated spectrum to the experimental one. Formation mechanisms of C2 and CN in laser ablation plasma are briefly reviewed to provide insights for implementation of LAMIS measurements. A simulated spectrum of the 12C2 Swan system was synthesized using four constituents within 473.5-476.5 nm. Simulation included three branches of 12C2 (1-0), branches R(0-0) and R(1-1), and branch P(9-8) of 12C2. Spectral positions of the tail lines in R(0-0) and R(1-1) were experimentally measured, since they were not accurately known before. The Swan band (1-0) of the isotopologue 13C12C was also simulated. Fitting to the experimental spectrum yielded the ratio 13C/12C = 1.08% in a good agreement with measurements by isotope ratio mass spectrometry. LAMIS promises to be useful in coal, oil and shale exploration, carbon sequestration monitoring, and agronomy studies.

  2. 14th international symposium on molecular beams

    SciTech Connect

    Not Available

    1992-01-01

    This report discusses research being conducted with molecular beams. The general topic areas are as follows: Clusters I; reaction dynamics; atomic and molecular spectroscopy; clusters II; new techniques; photodissociation dynamics; and surfaces.

  3. 14th international symposium on molecular beams

    SciTech Connect

    Not Available

    1992-09-01

    This report discusses research being conducted with molecular beams. The general topic areas are as follows: Clusters I; reaction dynamics; atomic and molecular spectroscopy; clusters II; new techniques; photodissociation & dynamics; and surfaces.

  4. Synthesis of Ag-deionized water nanofluids using multi-beam laser ablation in liquids

    SciTech Connect

    Tran, P.X.; Soong, Yee; Chyu, M.K.

    2007-12-01

    Multi-pulse laser ablation of silver in deionized water was studied. The laser beams were arranged in a cross-beam configuration. In our experiments, two single-mode, Q-switched Nd-Yag lasers operating at 1064 nm, pulse duration of 5.5 ns and 10 Hz rep rate were used. The laser fluence of the second beam was 0.265 J/cm2 for all tests. Two levels of the laser fluences were used for the ablating beam: 0.09 and 0.265 J/cm2 (11,014 and 33,042 J/cm2 at the focal point, respectively). The silver target was at 50mm from the cell window and 10mm deep. The second beam was aligned parallelly with the silver target and focused at 2mm in front of the focal point of the ablating beam. For all cases, the delay time between the ablating beam and the cross-beam was 40 ms. In general, the ablated particles were almost all spherical. For fluence of 0.09 J/cm 2 and single-beam approach, the mean particle size was about 29 nm. The majority of the particles, however, were in 19–35nm range and there were some big ones as large as 50–60nm in size. For double-beam approach, the particles were smaller with the average size of about 18nm and the majority of the particles were in 9–21nm range with few big one as large as 40 nm. For the beam fluence of 0.265 J/cm2 and single-beam configuration, the particle sizes were smaller, the mean particles size was about 18nm and the majority of the particles were in the range of 10–22nm with some big one as large as 40 nm. For double-beam approach, the mean particle size was larger (24.2 nm) and the majority of the particle were distributed from 14 to 35nm with some big particles can be found with sizes as big as 70 nm. Preliminary measurements of the thermal conductivity and viscosity of the produced samples showed that the thermal conductivity increased about 3–5% and the viscosity increased 3.7% above the base fluid viscosity even with the particle volume concentration as low as 0.01%.

  5. Mid-IR enhanced laser ablation molecular isotopic spectrometry

    NASA Astrophysics Data System (ADS)

    Brown, Staci; Ford, Alan; Akpovo, Codjo A.; Johnson, Lewis

    2016-08-01

    A double-pulsed laser-induced breakdown spectroscopy (DP-LIBS) technique utilizing wavelengths in the mid-infrared (MIR) for the second pulse, referred to as double-pulse LAMIS (DP-LAMIS), was examined for its effect on detection limits compared to single-pulse laser ablation molecular isotopic spectrometry (LAMIS). A MIR carbon dioxide (CO2) laser pulse at 10.6 μm was employed to enhance spectral emissions from nanosecond-laser-induced plasma via mid-IR reheating and in turn, improve the determination of the relative abundance of isotopes in a sample. This technique was demonstrated on a collection of 10BO and 11BO molecular spectra created from enriched boric acid (H3BO3) isotopologues in varying concentrations. Effects on the overall ability of both LAMIS and DP-LAMIS to detect the relative abundance of boron isotopes in a starting sample were considered. Least-squares fitting to theoretical models was used to deduce plasma parameters and understand reproducibility of results. Furthermore, some optimization for conditions of the enhanced emission was achieved, along with a comparison of the overall emission intensity, plasma density, and plasma temperature generated by the two techniques.

  6. Direct femtosecond laser ablation of copper with an optical vortex beam

    NASA Astrophysics Data System (ADS)

    Anoop, K. K.; Fittipaldi, R.; Rubano, A.; Wang, X.; Paparo, D.; Vecchione, A.; Marrucci, L.; Bruzzese, R.; Amoruso, S.

    2014-09-01

    Laser surface structuring of copper is induced by laser ablation with a femtosecond optical vortex beam generated via spin-to-orbital conversion of the angular momentum of light by using a q-plate. The variation of the produced surface structures is studied as a function of the number of pulses, N, and laser fluence, F. After the first laser pulse (N = 1), the irradiated surface presents an annular region characterized by a corrugated morphology made by a rather complex network of nanometer-scale ridges, wrinkles, pores, and cavities. Increasing the number of pulses (2 < N < 100), the surface texture progressively evolves towards larger structures, while the central, non-ablated area is gradually decorated by nanoparticles produced during laser ablation. At large number of pulses (200 < N < 1000), a micro-tip with a nanostructured surface forms in the center of the irradiated area, which eventually disappears at still larger number of pulses (N > 1000) and a deep crater is formed. The nanostructure variation with the laser fluence, F, also evidences an interesting dependence, with a coarsening of the structure morphology as F increases. Our experimental findings demonstrate that direct femtosecond laser ablation with optical vortex beams produces interesting patterns not achievable by the more standard beams with a Gaussian intensity profile. They also suggest that appropriate tuning of the experimental conditions (F, N) can allow generating micro- and/or nano-structured surface for any specific application.

  7. Direct femtosecond laser ablation of copper with an optical vortex beam

    SciTech Connect

    Anoop, K. K.; Rubano, A.; Marrucci, L.; Bruzzese, R.; Amoruso, S.; Fittipaldi, R.; Vecchione, A.; Wang, X.; Paparo, D.

    2014-09-21

    Laser surface structuring of copper is induced by laser ablation with a femtosecond optical vortex beam generated via spin-to-orbital conversion of the angular momentum of light by using a q-plate. The variation of the produced surface structures is studied as a function of the number of pulses, N, and laser fluence, F. After the first laser pulse (N=1), the irradiated surface presents an annular region characterized by a corrugated morphology made by a rather complex network of nanometer-scale ridges, wrinkles, pores, and cavities. Increasing the number of pulses (2ablated area is gradually decorated by nanoparticles produced during laser ablation. At large number of pulses (2001000) and a deep crater is formed. The nanostructure variation with the laser fluence, F, also evidences an interesting dependence, with a coarsening of the structure morphology as F increases. Our experimental findings demonstrate that direct femtosecond laser ablation with optical vortex beams produces interesting patterns not achievable by the more standard beams with a Gaussian intensity profile. They also suggest that appropriate tuning of the experimental conditions (F, N) can allow generating micro- and/or nano-structured surface for any specific application.

  8. Erbium oxide thin films on Si(100) obtained by laser ablation and electron beam evaporation

    NASA Astrophysics Data System (ADS)

    Queralt, X.; Ferrater, C.; Sánchez, F.; Aguiar, R.; Palau, J.; Varela, M.

    1995-02-01

    Erbium oxide thin films have been obtained by laser ablation and electron beam evaporation techniques on Si(100) substrates. The samples were grown under different conditions of oxygen atmosphere and substrate temperature without any oxidation process after deposition. The crystal structure has been studied by X-ray diffraction. Films obtained by laser ablation are highly textured in the [ hhh] direction, although this depends on the conditions of oxygen pressure and substrate temperature. In order to study the depth composition profile of the thin films and the interdiffusion of erbium metal and oxygen towards the silicon substrates, X-ray photoelectron spectroscopy analyses have been carried out.

  9. Ablation pressure driven by an energetic electron beam in a dense plasma.

    PubMed

    Gus'kov, S; Ribeyre, X; Touati, M; Feugeas, J-L; Nicolaï, Ph; Tikhonchuk, V

    2012-12-21

    An intense beam of high energy electrons may create extremely high pressures in solid density materials. An analytical model of ablation pressure formation and shock wave propagation driven by an energetic electron beam is developed and confirmed with numerical simulations. In application to the shock-ignition approach in inertial confinement fusion, the energy transfer by fast electrons may be a dominant mechanism of creation of the igniting shock wave. An electron beam with an energy of 30 keV and energy flux 2-5 PW/cm(2) can create a pressure amplitude more than 300 Mbar for a duration of 200-300 ps in a precompressed solid material.

  10. Laser ablation of hard tissue: correlation between the laser beam parameters and the post-ablative tissue characteristics

    NASA Astrophysics Data System (ADS)

    Serafetinides, Alexandros A.; Makropoulou, Mersini I.; Khabbaz, Maruan

    2003-11-01

    Hard dental tissue laser applications, such as preventive treatment, laser diagnosis of caries, laser etching of enamel, laser decay removal and cavity preparation, and more recently use of the laser light to enlarge the root canal during the endodontic therapy, have been investigated for in vitro and in vivo applications. Post-ablative surface characteristics, e.g. degree of charring, cracks and other surface deformation, can be evaluated using scanning electron microscopy. The experimental data are discussed in relevance with the laser beam characteristics, e.g. pulse duration, beam profile, and the beam delivery systems employed. Techniques based on the laser illumination of the dental tissues and the subsequent evaluation of the scattered fluorescent light will be a valuable tool in early diagnosis of tooth diseases, as carious dentin or enamel. The laser induced autofluorescence signal of healthy dentin is much stronger than that of the carious dentin. However, a better understanding of the transmission patterns of laser light in teeth, for both diagnosis and therapy is needed, before the laser procedures can be used in a clinical environment.

  11. Molecular beams: our legacy from Otto Stern

    NASA Astrophysics Data System (ADS)

    Ramsey, N. F.

    1988-06-01

    It is an honor to contribute to this celebration of the hundredth anniversary of the birth of Otto Stern, who developed molecular beams to become one of the most nowerful and fruitful physics research methods.

  12. Silicon Holder For Molecular-Beam Epitaxy

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.

    1993-01-01

    Simple assembly of silicon wafers holds silicon-based charge-coupled device (CCD) during postprocessing in which silicon deposited by molecular-beam epitaxy. Attains temperatures similar to CCD, so hotspots suppressed. Coefficients of thermal expansion of holder and CCD equal, so thermal stresses caused by differential thermal expansion and contraction do not develop. Holder readily fabricated, by standard silicon processing techniques, to accommodate various CCD geometries. Silicon does not contaminate CCD or molecular-beam-epitaxy vacuum chamber.

  13. Orbiting molecular-beam laboratory

    NASA Technical Reports Server (NTRS)

    Outlaw, R. A.; Brock, F. J.

    1977-01-01

    The composition of the atmosphere within the planned orbital envelope of the Space Shuttle and the velocity necessary to maintain a stable orbit within that envelope provide unique conditions for forming a high-purity, moderate energy beam (about 5 eV) of atomic oxygen. At 500 km, for example, atomic oxygen comprises approximately 90% of the atmosphere. Since the mean thermal speed of the ambient atomic oxygen is substantially less than the orbital speed, a high-purity beam can be generated by sweeping through the gas with a series of beam-forming truncated conical shells. Characteristics of the beam, including energy distribution, flux, and purity variation with orbital altitude and methods for lowering the mean energy, are presented. Gas-surface interaction experiments that have been proposed for this laboratory are also discussed.

  14. Beamed Energy Propulsion by Means of Target Ablation

    NASA Astrophysics Data System (ADS)

    Rosenberg, Benjamin A.

    2004-03-01

    This paper describes hundreds of pendulum tests examining the beamed energy conversion efficiency of different metal targets coated with multiple liquid enhancers. Preliminary testing used a local laser with photographic paper targets, with no liquid, water, canola oil, or methanol additives. Laboratory experimentation was completed at Wright-Patterson AFB using a high-powered laser, and ballistic pendulums of aluminum, titanium, or copper. Dry targets, and those coated with water, methanol and oil were repeatedly tested in laboratory conditions. Results were recorded on several high-speed digital video cameras, and the conversion efficiency was calculated. Paper airplanes successfully launched using BEP were likewise recorded.

  15. Beamed Energy Propulsion by Means of Target Ablation

    SciTech Connect

    Rosenberg, Benjamin A.

    2004-03-30

    This paper describes hundreds of pendulum tests examining the beamed energy conversion efficiency of different metal targets coated with multiple liquid enhancers. Preliminary testing used a local laser with photographic paper targets, with no liquid, water, canola oil, or methanol additives. Laboratory experimentation was completed at Wright-Patterson AFB using a high-powered laser, and ballistic pendulums of aluminum, titanium, or copper. Dry targets, and those coated with water, methanol and oil were repeatedly tested in laboratory conditions. Results were recorded on several high-speed digital video cameras, and the conversion efficiency was calculated. Paper airplanes successfully launched using BEP were likewise recorded.

  16. Simple Validation of Transient Plume Models Using Molecular Beam-Related Applications

    SciTech Connect

    Woronowicz, M. S.

    2008-12-31

    A simple effort using molecular beam data to compare the results of two different transient free molecule point source models was performed, motivated by a desire to determine the utility of such formulations for a variety of time-dependent applications. These models are evaluated against effusive molecular beam time-of-flight data, as well as behavior observed in pulsed laser ablation experiments and high-fidelity direct simulation Monte Carlo results. Such comparisons indicate that the physical behavior of these time-dependent expansions require taking a surface-enforced directional bias into account. This bias has been absent in a number of investigative formulations, both historical and current.

  17. Photochemical processes in laser ablation of organic solids: Molecular dynamics study

    NASA Astrophysics Data System (ADS)

    Yingling, Yaroslava G.

    In this thesis, a comprehensive study of the effect of the photochemical processes on laser ablation mechanisms has been conducted using molecular dynamics simulations. We developed a new concept for modeling photochemical processes in laser ablation of organic films using a mesoscopic coarse-grain breathing sphere model for molecular dynamics simulations. The main advantage of our model is the ability to study the dynamics of the system at the mesoscopic length scale, a regime that is not accessible either with atomistic or continuum computational methods. The photodecomposition of the excited molecules and the chemical reaction patterns in our simulations are based on the photochemistry of chlorobenzene due to ease of its fragmentation and available experimental data. Interpretation of the experimental data is the main objective of our theoretical efforts. Molecular dynamics simulations are used to investigate the effect of photochemical processes on molecular ejection mechanisms in 248-nm laser irradiation of organic solids. Photochemical reactions are found to release additional energy into the irradiated sample and decrease the average cohesive energy, therefore decreasing the value of the ablation threshold. The yield of emitted fragments becomes significant only above the ablation threshold. Below the ablation threshold, only the most volatile photoproduct, HCl, is ejected in very small amounts, whereas the remainder of photoproducts are trapped inside the sample. The presence of photochemical decomposition processes and subsequent chemical reactions changes the temporal and spatial energy deposition profile from pure photothermal ablation. The chemical reactions create an additional local pressure build up and, as a result, generate a strong and broad acoustic pressure wave propagating toward the bottom of the computational cell. The strong pressure wave in conjunction with the temperature increase in the absorbing region causes the ejection of hot massive

  18. Molecular-beam spectroscopy of interhalogen molecules

    SciTech Connect

    Sherrow, S.A.

    1983-08-01

    A molecular-beam electric-resonance spectrometer employing a supersonic nozzle source has been used to obtain hyperfine spectra of /sup 79/Br/sup 35/Cl. Analyses of these spectra and of microwave spectra published by other authors have yielded new values for the electric dipole moment and for the nuclear quadrupole coupling constants in this molecule. The new constants are significantly different from the currently accepted values. Van der Waals clusters containing chlorine monofluoride have been studied under various expansion conditions by the molecular-beam electric-deflection method. The structural possibilities indicated by the results are discussed, and cluster geometries are proposed.

  19. Investigation of effect of solenoid magnet on emittances of ion beam from laser ablation plasma

    SciTech Connect

    Ikeda, Shunsuke Sekine, Megumi; Romanelli, Mark; Cinquegrani, David; Kumaki, Masafumi; Fuwa, Yasuhiro; Kanesue, Takeshi; Okamura, Masahiro; Horioka, Kazuhiko

    2014-02-15

    A magnetic field can increase an ion current of a laser ablation plasma and is expected to control the change of the plasma ion current. However, the magnetic field can also make some fluctuations of the plasma and the effect on the beam emittance and the emission surface is not clear. To investigate the effect of a magnetic field, we extracted the ion beams under three conditions where without magnetic field, with magnetic field, and without magnetic field with higher laser energy to measure the beam distribution in phase space. Then we compared the relations between the plasma ion current density into the extraction gap and the Twiss parameters with each condition. We observed the effect of the magnetic field on the emission surface.

  20. Investigation of effect of solenoid magnet on emittances of ion beam from laser ablation plasma.

    PubMed

    Ikeda, Shunsuke; Romanelli, Mark; Cinquegrani, David; Sekine, Megumi; Kumaki, Masafumi; Fuwa, Yasuhiro; Kanesue, Takeshi; Okamura, Masahiro; Horioka, Kazuhiko

    2014-02-01

    A magnetic field can increase an ion current of a laser ablation plasma and is expected to control the change of the plasma ion current. However, the magnetic field can also make some fluctuations of the plasma and the effect on the beam emittance and the emission surface is not clear. To investigate the effect of a magnetic field, we extracted the ion beams under three conditions where without magnetic field, with magnetic field, and without magnetic field with higher laser energy to measure the beam distribution in phase space. Then we compared the relations between the plasma ion current density into the extraction gap and the Twiss parameters with each condition. We observed the effect of the magnetic field on the emission surface.

  1. Molecular beam mass spectrometer development

    NASA Technical Reports Server (NTRS)

    Brock, F. J.; Hueser, J. E.

    1976-01-01

    An analytical model, based on the kinetics theory of a drifting Maxwellian gas is used to determine the nonequilibrium molecular density distribution within a hemispherical shell open aft with its axis parallel to its velocity. The concept of a molecular shield in terrestrial orbit above 200 km is also analyzed using the kinetic theory of a drifting Maxwellian gas. Data are presented for the components of the gas density within the shield due to the free stream atmosphere, outgassing from the shield and enclosed experiments, and atmospheric gas scattered off a shield orbiter system. A description is given of a FORTRAN program for computating the three dimensional transition flow regime past the space shuttle orbiter that employs the Monte Carlo simulation method to model real flow by some thousands of simulated molecules.

  2. Zeeman-Sisyphus Deceleration of Molecular Beams

    NASA Astrophysics Data System (ADS)

    Fitch, Noah; Tarbutt, Mike

    2016-05-01

    Ultracold molecules are useful for testing fundamental physics and studying strongly-interacting quantum systems. One production method is via direct laser cooling in a magneto-optical trap (MOT). In this endeavor, one major challenge is to produce molecules below the MOT capture velocity. Established molecular beam deceleration techniques are poorly suited because they decelerate only a small fraction of a typical molecular pulse. Direct laser cooling is a natural choice, but is also problematic due to transverse heating and the associated molecule loss. I will present a new technique that we are developing, which we call Zeeman-Sisyphus deceleration and which shows great promise for preparing molecular beams for MOT loading. This technique decelerates molecules using a linear array of permanent magnets, along with lasers that periodically optically pump molecules between weak and strong-field seeking quantum states. Being time-independent, this method is well-suited for temporally extended molecular beams. Simultaneous deceleration and transverse guiding makes this approach attractive as an alternative to direct laser cooling. I will present our development of the Zeeman-Sisyphus decelerator and its application to a molecular MOT of CaF and an ultracold fountain of YbF.

  3. Mechanism of Protein Molecule Isolation by IR Laser Ablation of Droplet Beam.

    PubMed

    Komatsu, Kensuke; Nirasawa, Takuya; Hoshino-Nagasaka, Mariko; Kohno, Jun-ya

    2016-03-10

    Gas-phase isolation of bovine serum albumin (BSA) from aqueous solutions is performed by IR laser ablation of a droplet beam. Multiply charged BSA ions (positive and negative) were produced by the IR laser irradiation onto a droplet beam of aqueous BSA solutions with various pH values prepared by addition of hydrochloric acid or sodium hydroxide to the solution. The isolation mechanism was discussed based on the charge state of the isolated BSA ions. A nanodroplet model explains the gas-phase charge distribution of the BSA ions. This study provides a fundamental basis for further studies of a wide variety of biomolecules in the gas phase isolated directly from solution. PMID:26903000

  4. Fabrication of nanoparticles and nanostructures using ultrafast laser ablation of silver with Bessel beams

    NASA Astrophysics Data System (ADS)

    Krishna Podagatlapalli, G.; Hamad, Syed; Ahamad Mohiddon, Md; Venugopal Rao, S.

    2015-03-01

    Ablation of silver targets immersed in double distilled water (DDW)/acetone was performed with first order, non-diffracting Bessel beams generated by focusing ultrashort Gaussian pulses (~2 and ~40 fs) through an Axicon. The fabricated Ag dispersions were characterized by UV-visible absorption spectroscopy, transmission electron microscopy and the nanostructured Ag targets were characterized by field emission scanning electron microscopy. Ag colloids prepared with ~2 ps laser pulses at various input pulse energies of ~400, ~600, ~800 and ~1000 µJ demonstrated similar localized surface plasmon resonance (LSPR) peaks appearing near 407 nm. Analogous behavior was observed for Ag colloids prepared in acetone and ablated with ~40 fs pulses, wherein the LSPR peak was observed near 412 nm prepared with input energies of ~600, ~800 and ~1000 µJ. Observed parallels in LSPR peaks, average size of NPs, plasmon bandwidths are tentatively explained using cavitation bubble dynamics and simultaneous generation/fragmentation of NPs under the influence of Bessel beam. Fabricated Ag nanostructures in both the cases demonstrated strong enhancement factors (>106) in surface enhanced Raman scattering studies of the explosive molecule CL-20 (2,4,6,8,10,12-Hexanitro-2,4,6,8,10,12-hexaazaisowurtzitane) at 5 μM concentration.

  5. Endometrial ablation

    MedlinePlus

    Hysteroscopy-endometrial ablation; Laser thermal ablation; Endometrial ablation-radiofrequency; Endometrial ablation-thermal balloon ablation; Rollerball ablation; Hydrothermal ablation; Novasure ablation

  6. Physics with fast molecular-ion beams

    SciTech Connect

    Kanter, E.P.

    1980-01-01

    Fast (MeV) molecular-ion beams provide a unique source of energetic projectile nuclei which are correlated in space and time. The recognition of this property has prompted several recent investigations of various aspects of the interactions of these ions with matter. High-resolution measurements on the fragments resulting from these interactions have already yielded a wealth of new information on such diverse topics as plasma oscillations in solids and stereochemical structures of molecular ions as well as a variety of atomic collision phenomena. The general features of several such experiments will be discussed and recent results will be presented.

  7. Molecular-beam gas-sampling system

    NASA Technical Reports Server (NTRS)

    Young, W. S.; Knuth, E. L.

    1972-01-01

    A molecular beam mass spectrometer system for rocket motor combustion chamber sampling is described. The history of the sampling system is reviewed. The problems associated with rocket motor combustion chamber sampling are reported. Several design equations are presented. The results of the experiments include the effects of cooling water flow rates, the optimum separation gap between the end plate and sampling nozzle, and preliminary data on compositions in a rocket motor combustion chamber.

  8. Damage in materials following ablation by ultrashort laser pulses: A molecular-dynamics study

    SciTech Connect

    Bouilly, Delphine; Perez, Danny; Lewis, Laurent J.

    2007-11-01

    The formation of craters following femtosecond- and picosecond-pulse laser ablation in the thermal regime is studied using a generic two-dimensional numerical model based on molecular-dynamics simulations and the Lennard-Jones potential. Femtosecond pulses are found to produce very clean craters through a combination of etching of the walls and the formation of a very thin heat affected zone. Our simulations also indicate that dislocations are emitted continuously during all of the ablation process (i.e., for hundreds of ps). For picosecond pulses, we observe much thicker heat affected zones which result from melting and recrystallization following the absorption of the light. In this case also, continuous emission of dislocations--though fewer in number--takes place throughout the ablation process.

  9. Comment on ''Generation of cold low divergent atomic beam of indium by laser ablation'' [Rev. Sci. Instrum. 76, 113302 (2005)

    SciTech Connect

    Denning, A.; Booth, A.; Lee, S.; Amonson, M.; Bergeson, S. D.

    2009-04-15

    We present measurements of the velocity distribution of calcium atoms in an atomic beam generated using a dual-stage laser back-ablation apparatus. Distributions are measured using a velocity selective Doppler time-of-flight technique. They are Boltzmann-like with rms velocities corresponding to temperatures above the melting point for calcium. Contrary to a recent report in the literature, this method does not generate a subthermal atomic beam.

  10. Plume dynamics of cross-beam pulsed-laser ablation of graphite

    SciTech Connect

    Sanchez Ake, C.; Sangines de Castro, R.; Sobral, H.; Villagran-Muniz, M.

    2006-09-01

    The dynamics of the interaction between two plasmas induced by cross-beam pulsed-laser ablation was analyzed by time resolved optical emission spectroscopy and fast photography. The plasmas were created in vacuum by irradiating two perpendicular graphite targets with an excimer (248 nm) and a Nd:yttrium-aluminum-garnet (1064 nm) laser. In this configuration, a laser is focused onto a target generating a highly directed plume; subsequently, an additional laser produces a second plasma from the perpendicular target which expands through the first plume. Collisional processes cause a reduction of the kinetic energy of the second plume species as compared to the single pulse experiment. For a fixed delay between lasers of 2 {mu}s, the second plume was divided in two perpendicular directions. The dynamics of this plasma has been compared with laser-induced plume propagation through a background gas in terms of the drag model.

  11. Laser beam deflection monitoring of Nd: YAG laser ablation: pulse shape and repetition rate effects

    NASA Astrophysics Data System (ADS)

    Diaci, Janez; Možina, Janez

    1993-05-01

    The laser beam deflection probe has been employed to study blast waves generated during ablation of metallic surfaces by sequences of 1.06 μm Nd:YAG laser pulses separated by less than 1μs. A fluence threshold has been found, below which the effects of individual pulses can be resolved by the laser probe. Above that, the deflection signal has a similar form as if the surface were irradiated with a single pulse. Analysis of the signals in terms of the spherical blast wave theory shows that a pulse sequence generates a weaker blast wave than a single pulse of equal total energy. On the other hand, the sequence yields a higher etch depth than the single pulse.

  12. Emittance dependence on anode morphology of an ion beam provided by laser ablation

    NASA Astrophysics Data System (ADS)

    Velardi, L.; Delle Side, D.; Nassisi, V.

    2014-07-01

    In this work, we studied the characteristics of ion beams generated by Platone accelerator in different anode configurations. The accelerator is a laser ion source with two gaps which accelerate the ions in cascade. The laser is a ns pulsed KrF able to apply irradiances of 109-1010 W/cm2. The target ablated was pure disk of Cu. The accelerating voltage applied in this work was 60 kV. The emittance evaluation was performed by the pepper pot method utilizing radio-chromic films, EBT Gafchromic, as sensible targets. The study was performed by varying the geometric configuration of the anode (the extracting electrode), modifying the hole morphology, e.g. a plane and curved grid were mounted in order to change the extraction configuration. The results were compared with the ones obtained with the extraction hole without any grid. For the normalized emittance the lowest value was 0.20π mm mrad.

  13. Perspective: Oxide molecular-beam epitaxy rocks!

    SciTech Connect

    Schlom, Darrell G.

    2015-06-01

    Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  14. Materials issues in molecular beam epitaxy

    SciTech Connect

    Tsao, J.Y.

    1993-12-31

    The technology of crystal growth has advanced enormously during the past two decades; among those advances, the development and refinement of molecular beam epitaxy (MBE) has been among the most important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today form the basis for many of the most advanced device structures in solid-state physics, electronics and optoelectronics. In addition to its numerous device applications, MBE is also an enormously rich and interesting area of materials science in and of itself. This paper, discusses a few examples of some of these materials issues, organized according to whether they involve bulk, thin films, or surfaces.

  15. Serendipitous Meanderings and Adventures with Molecular Beams

    NASA Astrophysics Data System (ADS)

    Toennies, J. Peter

    2004-01-01

    This is the story of a native-born American who came as a postdoc to the country of his parents, Germany. There, by good fortune, he could participate in the revival and the rebuilding of the physical sciences following the ravishments of the Second World War, becoming at the age of 38, the director of a Max-Planck-Institut in Gottingen. Working under nearly ideal conditions, he carried out basic research using molecular beams. Aided by many active, youthfully impulsive, yet perceptive and imaginative, students and experienced knowledgeable guest scientists from many countries, he enjoyed exciting adventures into unknown landscapes in the fields of molecular gas-phase interactions and solid-surface phenomena and, most recently, in the realms of quantum liquids and solids.

  16. Studies on the Application of High Voltage Discharge Ionization and Ablation in Supersonic-Jets for the Generation of Intense Cluster Ion Beams.

    NASA Astrophysics Data System (ADS)

    Brock, Ansgar

    Glow discharge and pulsed capacitor discharge ionization in supersonic expansions were investigated for the production of intense beams of molecular cluster ions from seeded and ablated compounds. A low cost high voltage high current pulser based on a triggered spark gap switch is described as a mean for ionization and ablation. Besides, details of the molecular beam apparatus and modified pulsed valve are given. Cluster cations rm (Ar)_ {n}^+, rm (CO_2) _{n}^{+}, rm (C_6H_6)_{n}^+ and rm (H_2O)_{n }^+ were produced by pulsed capacitor discharge ionization in the expansion region of a seeded free-jet. The observed cluster mass spectra (CMS) for Ar, rm C_6H_6 and H _2O show the characteristic features (magic numbers) of electron beam and photo ionized clusters under molecular flow conditions. Indications for the presence of magic numbers in the CMS of {(CO _2)_{n}^+} cluster ions at n = 20, 26, 30 and 34 similar to those found for rare gas clusters have been found. Cationic metal ligand complexes Cu(Toluene) _{rm n}^+, Cu(Acetone) _{rm n}^+, Cu(Methanol)_{rm n}^+ , Cu(Ethylether)_{rm n }^+, Cu(Water)_{ rm n}^+, Al(Water)_ {rm n}^+ were synthesized by ablation of the metal from metallic discharge electrodes in a discharge gas mixture of helium seeded with the ligand of choice. The CMS of the expanded plasmas show little background ion signal besides the metal-ligand species. Charge exchange processes in the expansion guarantee high ionization yields of the desired species and account for low backgrounds. Changes in the successive binding energy of Cu(Water)_ {rm n}^+ clusters n = 1-4 are clearly observed in the CMS as step formation. A similar pattern found in the Cu(Acetone)_{ rm n}^+ CMS suggests the same trend in the successive binding energy as known for water. Ablation from a Cr(acac)_3 in a copper matrix was employed for the synthesis of Cr(Acetone) _{rm n}^+ and Cr(Benzene)^+ complexes demonstrating the ability to use nonconducting compounds as a metal source

  17. Energy transport analysis in ultrashort pulse laser ablation through combined molecular dynamics and Monte Carlo simulation

    SciTech Connect

    Hu Wenqian; Shin, Yung C.; King, Galen

    2010-09-01

    Mechanisms of energy transport during ultrashort laser pulses (USLPs) ablation are investigated in this paper. Nonequilibrium electron-transport, material ionization, as well as density change effects, are studied using atomistic models--the molecular dynamics (MD) and Monte Carlo (MC) methods, in addition to the previously studied laser absorption, heat conduction, and stress wave propagation. The target material is treated as consisting of two subsystems: valence-electron system and lattice system. MD method is applied to analyze the motion of atoms while MC method is applied for simulating electron dynamics and multiscattering events between particles. Early-time laser-energy absorption and redistribution as well as later-time material ablation and expansion processes are analyzed. This model is validated in terms of ablation depth, lattice/electron temperature distribution as well as evolution, and plume front velocity, through comparisons with experimental or theoretical results in literature. It is generally believed that the hydrodynamic motion of the ablated material is negligible for USLP but this study shows it is true only for its effect on laser-energy deposition. This study shows that the consideration of hydrodynamic expansion and fast density change in both electron and lattice systems is important for obtaining a reliable energy transport mechanism in the locally heated zone.

  18. Molecular-Beam Chopper and Four-Channel Amplifier

    NASA Technical Reports Server (NTRS)

    Adams, B. R.

    1986-01-01

    Molecular-beam chopper phase controller and timing interface is subsystem of four-stage, differentially pumped, modulated molecular-beam/mass spectrometer. Subsystem maintains accurate phase control and timing for repetitive signal averaging over several hours of operation. Chopper phase controller/ timing interface and four-channel programable time-multiplexed amplifier provide substantial improvements in attainable signal-to-noise ratio, detection limit, and accuracy of molecular-beam/mass-spectrometer system.

  19. Cone-Beam Computed Tomography (CBCT) Versus CT in Lung Ablation Procedure: Which is Faster?

    SciTech Connect

    Cazzato, Roberto Luigi Battistuzzi, Jean-Benoit Catena, Vittorio; Grasso, Rosario Francesco Zobel, Bruno Beomonte; Schena, Emiliano; Buy, Xavier Palussiere, Jean

    2015-10-15

    AimTo compare cone-beam CT (CBCT) versus computed tomography (CT) guidance in terms of time needed to target and place the radiofrequency ablation (RFA) electrode on lung tumours.Materials and MethodsPatients at our institution who received CBCT- or CT-guided RFA for primary or metastatic lung tumours were retrospectively included. Time required to target and place the RFA electrode within the lesion was registered and compared across the two groups. Lesions were stratified into three groups according to their size (<10, 10–20, >20 mm). Occurrences of electrode repositioning, repositioning time, RFA complications, and local recurrence after RFA were also reported.ResultsForty tumours (22 under CT, 18 under CBCT guidance) were treated in 27 patients (19 male, 8 female, median age 67.25 ± 9.13 years). Thirty RFA sessions (16 under CBCT and 14 under CT guidance) were performed. Multivariable linear regression analysis showed that CBCT was faster than CT to target and place the electrode within the tumour independently from its size (β = −9.45, t = −3.09, p = 0.004). Electrode repositioning was required in 10/22 (45.4 %) tumours under CT guidance and 5/18 (27.8 %) tumours under CBCT guidance. Pneumothoraces occurred in 6/14 (42.8 %) sessions under CT guidance and in 6/16 (37.5 %) sessions under CBCT guidance. Two recurrences were noted for tumours receiving CBCT-guided RFA (2/17, 11.7 %) and three after CT-guided RFA (3/19, 15.8 %).ConclusionCBCT with live 3D needle guidance is a useful technique for percutaneous lung ablation. Despite lesion size, CBCT allows faster lung RFA than CT.

  20. Delayed Shutters For Dual-Beam Molecular Epitaxy

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J.; Liu, John L.; Hancock, Bruce

    1989-01-01

    System of shutters for dual-molecular-beam epitaxy apparatus delays start of one beam with respect to another. Used in pulsed-beam equipment for deposition of low-dislocation layers of InAs on GaAs substrates, system delays application of arsenic beam with respect to indium beam to assure proper stoichiometric proportions on newly forming InAs surface. Reflectance high-energy electron diffraction (RHEED) instrument used to monitor condition of evolving surface of deposit. RHEED signal used to time pulsing of molecular beams in way that minimizes density of defects and holds lattice constant of InAs to that of GaAs substrate.

  1. Role of wavelength and pulse duration in laser ablation: implications to beam delivery, surface modifications, and diagnostic techniques

    NASA Astrophysics Data System (ADS)

    Serafetinides, Alexander A.

    1999-05-01

    The basic interaction mechanism of pulsed laser ablation of tissue reveals a complexity of parameters, such as the optical properties of the tissue and the technical characteristics of the laser beam. The role of the laser wavelength, the pulse duration, the energy fluence, etc. as well as the implications on the beam delivery means, the ablated surface modifications and the diagnostic techniques employed are under investigation. For example, it was experimentally verified that when using mid-infrared lasers with pulse durations in the ns range, the photothermal mechanism involved exhibits strong absorption restricting the residual thermal damage to a relatively small zone. On the other hand the ablation of tissue with ultrashort, picosecond and femtosecond, visible and near-infrared laser pulses has been investigated as an alternative, as the energy threshold for ablation biological tissue, depends approximately on the square root of the pulse duration. However the pulse length shortening creates problems to the fibers or the waveguides ends, due to the very high laser power densities involved. Conventional and advanced microscopy, scanning electron microscopy--SEM and atomic force microscopy--AFM, were used to study the surface and ends alterations of the delivery system involved and the surface alterations of the soft or the hard tissue target in pulsed laser ablation. Finally differentiation between the normal and the pathological tissue was achieved by employing the laser induced fluorescence--LIF diagnostic technique in a long term effort to develop a computer aided system, which will facilitate the automated, real-time characterization of healthy or atherosclerotic plaques in a less invasive laser ablation clinical procedure.

  2. Infrared Rugates by Molecular Beam Epitaxy

    NASA Technical Reports Server (NTRS)

    Rona, M.

    1993-01-01

    Rugates are optical structures that have a sinusoidal index of refraction (harmonic gradient-index field). As their discrete high/ low index filter counterparts, they can be used as narrow rejection band filters. However, since rugates do not have abrupt interfaces, they tend to have a smaller absorption, hence deliver a higher in band reflectivity. The absence of sharp interfaces makes rugates even more desirable for high-energy narrow band reflectors. In this application, the lack of a sharp interface at the maximum internal standing wave electric field results in higher breakdown strengths. Our method involves fabricating rugates, with molecular beam epitaxy, on GaAs wafers as an Al(x)Ga(1-x)As single-crystal film.

  3. Molecular contamination study by interaction of a molecular beam with a platinum surface

    NASA Technical Reports Server (NTRS)

    Nuss, H. E.

    1976-01-01

    The capability of molecular beam scattering from a solid surface is analyzed for identification of molecular contamination of the surface. The design and setup of the molecular beam source and the measuring setup for the application of a phase sensitive measuring technique for the determination of the scattered beam intensity are described. The scattering distributions of helium and nitrogen molecular beams interacting with a platinum surface were measured for different amounts of contamination from diffusion pump oil for surface temperatures ranging from 30 to 400 C. The results indicate the scattering of molecular beams from a platinum surface is a very sensitive method for detecting surface contamination.

  4. Molecular beam studies of stratospheric photochemistry

    NASA Astrophysics Data System (ADS)

    Moore, Teresa Anne

    1998-12-01

    Photochemistry of chlorine oxide containing species plays a major role in stratospheric ozone depletion. This thesis discusses two photodissociation studies of the key molecules ClONO2 and ClOOCl which were previously thought to only produce Cl-atom (ozone depleting) products at wavelengths relevant to the stratosphere. The development of a molecular beam source of ClOOCl and the photodissociation dynamics of the model system Cl2O are also discussed. In the first chapter, the photochemistry of ClONO2 is examined at 308 nm using the technique of photofragment translational spectroscopy. Two primary decomposition pathways, leading to Cl + NO3 and ClO + NO2, were observed, with a lower limit of 0.33 for the relative yield of ClO. The angular distributions for both channels were anisotropic, indicating that the dissociation occurs within a rotational period. Chapter two revisits the photodissociation dynamics of Cl2O at 248 and 308 nm, on which we had previously reported preliminary findings. At 248 nm, three distinct dissociation pathways leading to Cl + ClO products were resolved. At 308 nm, the angular distribution was slightly more isotropic that previously reported, leaving open the possibility that Cl2O excited at 308 nm lives longer than a rotational period. Chapter three describes the development and optimization of a molecular beam source of ClOOCl. We utilized pulsed laser photolysis of ClA2O to generate ClO radicals, and cooled the cell to promote three body recombination to form ClOOCl. The principal components in the beam were Cl2, Cl2O, and ClOOCl. In the fourth chapter, the photodissociation dynamics of ClOOCl are investigated at 248 and 308 nm. We observed multiple dissociation pathways which produced ClO + ClO and 2Cl + O2 products. The relative Cl:ClO product yields are 1.0:0.13 and 1.0:0.20 for ClOOCl photolysis at 248 and 308 nm, respectively. The upper limit for the relative yield of the ClO + ClO channel was 0.19 at 248 nm and 0.31 at 308 nm

  5. Interaction of a converging laser beam with a Ag colloidal solution during the ablation of a Ag target in water.

    PubMed

    Resano-Garcia, Amandine; Battie, Yann; Naciri, Aotmane En; Chaoui, Nouari

    2016-05-27

    We studied the nanosecond laser-induced shape modifications of Ag colloids exposed to a converging laser beam during the ablation of a Ag target in water. To this end, we performed a series of laser ablation experiments in which the laser energy was varied while all other parameters were kept constant. In addition to transmission electron microscopy (TEM), the shape distribution of the Ag nanoparticles was determined by modelling the extinction spectra of the final colloidal solutions using theoretical calculations based on shape distributed effective medium theory (SDEMT). From these calculations, two physical parameters named sphericity and dispersity were introduced and used to gauge the evolution of the shape distribution of the particles. As the laser energy on the target was increased from 5 to 20 mJ/pulse, an apparently abrupt modification of the shape distribution of the particles was evidenced by both TEM and SDEMT calculations. This change is explained in terms of competitive fragmentation, growth and reshaping processes. On the basis the heating-melting-vaporization model, we demonstrate how the competition between these processes, occurring at different locations of the converging beam, determines the shape distribution of the final product. We highlight the relevance of the fluence gradient along the beam path and the laser interaction volume on the laser-induced modifications of the suspended particles during the ablation process. PMID:27095289

  6. Interaction of a converging laser beam with a Ag colloidal solution during the ablation of a Ag target in water

    NASA Astrophysics Data System (ADS)

    Resano-Garcia, Amandine; Battie, Yann; Naciri, Aotmane En; Chaoui, Nouari

    2016-05-01

    We studied the nanosecond laser-induced shape modifications of Ag colloids exposed to a converging laser beam during the ablation of a Ag target in water. To this end, we performed a series of laser ablation experiments in which the laser energy was varied while all other parameters were kept constant. In addition to transmission electron microscopy (TEM), the shape distribution of the Ag nanoparticles was determined by modelling the extinction spectra of the final colloidal solutions using theoretical calculations based on shape distributed effective medium theory (SDEMT). From these calculations, two physical parameters named sphericity and dispersity were introduced and used to gauge the evolution of the shape distribution of the particles. As the laser energy on the target was increased from 5 to 20 mJ/pulse, an apparently abrupt modification of the shape distribution of the particles was evidenced by both TEM and SDEMT calculations. This change is explained in terms of competitive fragmentation, growth and reshaping processes. On the basis the heating–melting–vaporization model, we demonstrate how the competition between these processes, occurring at different locations of the converging beam, determines the shape distribution of the final product. We highlight the relevance of the fluence gradient along the beam path and the laser interaction volume on the laser-induced modifications of the suspended particles during the ablation process.

  7. Ablation depth control with 40 nm resolution on ITO thin films using a square, flat top beam shaped femtosecond NIR laser

    NASA Astrophysics Data System (ADS)

    Kim, Hoon-Young; Yoon, Ji-Wook; Choi, Won-Suk; Kim, Kwang-Ryul; Cho, Sung-Hak

    2016-09-01

    We reported on the ablation depth control with a resolution of 40 nm on indium tin oxide (ITO) thin film using a square beam shaped femtosecond (190 fs) laser (λp=1030 nm). A slit is used to make the square, flat top beam shaped from the Gaussian spatial profile of the femtosecond laser. An ablation depth of 40 nm was obtained using the single pulse irradiation at a peak intensity of 2.8 TW/cm2. The morphologies of the ablated area were characterized using an optical microscope, atomic force microscope (AFM), and energy dispersive X-ray spectroscopy (EDS). Ablations with square and rectangular types with various sizes were demonstrated on ITO thin film using slits with varying x-y axes. The stereo structure of the ablation with the depth resolution of approximately 40 nm was also fabricated successfully using the irradiation of single pulses with different shaped sizes of femtosecond laser.

  8. Note: High density pulsed molecular beam for cold ion chemistry.

    PubMed

    Kokish, M G; Rajagopal, V; Marler, J P; Odom, B C

    2014-08-01

    A recent expansion of cold and ultracold molecule applications has led to renewed focus on molecular species preparation under ultrahigh vacuum conditions. Meanwhile, molecular beams have been used to study gas phase chemical reactions for decades. In this paper, we describe an apparatus that uses pulsed molecular beam technology to achieve high local gas densities, leading to faster reaction rates with cold trapped ions. We characterize the beam's spatial profile using the trapped ions themselves. This apparatus could be used for preparation of molecular species by reactions requiring excitation of trapped ion precursors to states with short lifetimes or for obtaining a high reaction rate with minimal increase of background chamber pressure.

  9. Note: High density pulsed molecular beam for cold ion chemistry

    SciTech Connect

    Kokish, M. G.; Rajagopal, V.; Marler, J. P.; Odom, B. C.

    2014-08-15

    A recent expansion of cold and ultracold molecule applications has led to renewed focus on molecular species preparation under ultrahigh vacuum conditions. Meanwhile, molecular beams have been used to study gas phase chemical reactions for decades. In this paper, we describe an apparatus that uses pulsed molecular beam technology to achieve high local gas densities, leading to faster reaction rates with cold trapped ions. We characterize the beam's spatial profile using the trapped ions themselves. This apparatus could be used for preparation of molecular species by reactions requiring excitation of trapped ion precursors to states with short lifetimes or for obtaining a high reaction rate with minimal increase of background chamber pressure.

  10. Molecular beam surface analysis. 1993 Summary report

    SciTech Connect

    Appelhans, A.D.; Ingram, J.C.; Groenewold, G.S.; Dahl, D.A.; Delmore, J.E.

    1993-09-01

    The Molecular Beam Surface Analysis (MBSA) program is developing both laboratory-based and potentially field-portable chemical analyses systems taking advantage of new surface analysis technology developed at the Idaho National Engineering Laboratory (INEL). The objective is to develop the means to rapidly detect and identify, with high specificity and high sensitivity, nonvolatile and low volatile organics found in Chemical Weapons (CW) and High Explosives (HE) feedstocks, agents, and decomposition products on surfaces of plants, rocks, paint chips, filters, smears of buildings, vehicles, equipment, etc.. Ideally, the method would involve no sample preparation and no waste generation, and would have the potential for being implemented as a field-portable instrument. In contrast to existing analytical methods that rely on sample volatility, MBSA is optimized for nonvolatile and low volatile compounds. This makes it amenable for rapidly screening field samples for CW agent decomposition products and feedstock chemicals and perhaps actual agents. In its final configuration (benchtop size) it could be operated in a non-laboratory environment (such as an office building) requiring no sample preparation chemistry or chemical supplies. It could also be included in a mobile laboratory used in on-site, ore remote site cooperative surveys, or in a standard laboratory, where it would provide fast screening of samples at minimal cost.

  11. Molecular beam studies of elementary chemical processes.

    PubMed

    Lee, Y T

    1987-05-15

    The experimental investigation of elementary chemical reactions is presently in a very exciting period. The advance in modern microscopic experimental methods, especially crossed molecular beams and laser technology, has made it possible to explore the dynamics and mechanisms of important elementary chemical reactions in great detail. Through the continued accumulation of detailed and reliable knowledge about elementary reactions, we will be in a better position to understand, predict, and control many time-dependent macroscopic chemical processes that are important in nature or to human society. In addition, because of recent improvements in the accuracy of theoretical predictions based on large-scale ab initio quantum mechanical calculations, meaningful comparisons between theoretical and experimental findings have become possible. In the remaining years of the 20th century, there is no doubt that the experimental investigation of the dynamics and mechanisms of elementary chemical reactions will play a very important role in bridging the gap between the basic laws of mechanics and the real world of chemistry.

  12. Molecular beam studies of reaction dynamics

    SciTech Connect

    Lee, Y.T.

    1993-12-01

    The major thrust of this research project is to elucidate detailed dynamics of simple elementary reactions that are theoretically important and to unravel the mechanism of complex chemical reactions or photochemical processes that play important roles in many macroscopic processes. Molecular beams of reactants are used to study individual reactive encounters between molecules or to monitor photodissociation events in a collision-free environment. Most of the information is derived from measurement of the product fragment energy, angular, and state distributions. Recent activities are centered on the mechanisms of elementary chemical reactions involving oxygen atoms with unsaturated hydrocarbons, the dynamics of endothermic substitution reactions, the dependence of the chemical reactivity of electronically excited atoms on the alignment of excited orbitals, the primary photochemical processes of polyatomic molecules, intramolecular energy transfer of chemically activated and locally excited molecules, the energetics of free radicals that are important to combustion processes, the infrared-absorption spectra of carbonium ions and hydrated hydronium ions, and bond-selective photodissociation through electric excitation.

  13. Clinical Implementation of Intrafraction Cone Beam Computed Tomography Imaging During Lung Tumor Stereotactic Ablative Radiation Therapy

    SciTech Connect

    Li, Ruijiang; Han, Bin; Meng, Bowen; Maxim, Peter G.; Xing, Lei; Koong, Albert C.; Diehn, Maximilian; Loo, Billy W.

    2013-12-01

    Purpose: To develop and clinically evaluate a volumetric imaging technique for assessing intrafraction geometric and dosimetric accuracy of stereotactic ablative radiation therapy (SABR). Methods and Materials: Twenty patients received SABR for lung tumors using volumetric modulated arc therapy (VMAT). At the beginning of each fraction, pretreatment cone beam computed tomography (CBCT) was used to align the soft-tissue tumor position with that in the planning CT. Concurrent with dose delivery, we acquired fluoroscopic radiograph projections during VMAT using the Varian on-board imaging system. Those kilovolt projections acquired during millivolt beam-on were automatically extracted, and intrafraction CBCT images were reconstructed using the filtered backprojection technique. We determined the time-averaged target shift during VMAT by calculating the center of mass of the tumor target in the intrafraction CBCT relative to the planning CT. To estimate the dosimetric impact of the target shift during treatment, we recalculated the dose to the GTV after shifting the entire patient anatomy according to the time-averaged target shift determined earlier. Results: The mean target shift from intrafraction CBCT to planning CT was 1.6, 1.0, and 1.5 mm; the 95th percentile shift was 5.2, 3.1, 3.6 mm; and the maximum shift was 5.7, 3.6, and 4.9 mm along the anterior-posterior, left-right, and superior-inferior directions. Thus, the time-averaged intrafraction gross tumor volume (GTV) position was always within the planning target volume. We observed some degree of target blurring in the intrafraction CBCT, indicating imperfect breath-hold reproducibility or residual motion of the GTV during treatment. By our estimated dose recalculation, the GTV was consistently covered by the prescription dose (PD), that is, V100% above 0.97 for all patients, and minimum dose to GTV >100% PD for 18 patients and >95% PD for all patients. Conclusions: Intrafraction CBCT during VMAT can provide

  14. CO2 TEA Laser-Enhanced Laser Ablation Molecular Isotopic Spectrometry (TELLAMIS)

    NASA Astrophysics Data System (ADS)

    Brown, Staci R.; Akpovo, Charlemagne A.; Ford, Alan; Herbert, Kenley; Johnson, Lewis

    2014-03-01

    Recently, it has been shown that the relative abundance of isotopes in enriched materials can be determined via laser-induced breakdown spectroscopy (LIBS) in a technique known as laser-ablation molecular isotopic spectroscopy (LAMIS). The original LAMIS work has focused on single-pulse (SP) LIBS for the excitation. However, dual-pulse (DP) LIBS reduces shot-to-shot variation and can lower detection limits of an element by about an order of magnitude or more. It also has the potential to improve the accuracy of the determination of the relative abundances of isotopes in LAMIS by minimizing the signal-to-noise ratio. In this work, a DP-LIBS technique for improving LAMIS relative-abundance information from a sample is presented. The new technique, called (TEA) Transverse-Excited breakdown in Atmosphere Laser-Enhanced Laser Ablation Molecular Isotopic Spectrometry (TELLAMIS), uses a carbon dioxide (CO2) laser to increase the breakdown emission from LIBS in the LAMIS method. This technique is demonstrated on a collection of relative abundance isotopes of boron- 10 and boron-11 in varying concentrations in boric acid. Least-squares fitting to theoretical models are used to deduce plasma parameters and understand reproducibility of results. DTRA.

  15. Investigation Into the Optimum Beam Shape and Fluence for Selective Ablation of Dental Calculus at lambda = 400 nm

    SciTech Connect

    Schoenly, J.E.; Seka. W.; Rechmann, P.

    2010-02-25

    A frequency-doubled Ti:sapphire laser is shown to selectively ablate dental calculus. The optimal transverse shape of the laser beam, including its variability under water-cooling, is determined for selective ablation of dental calculus. Intensity profiles under various water-cooling conditions were optically observed. The 400-nm laser was coupled into a multimode optical fiber using an f = 2.5-cm lens and light-shaping diffuser. Water-cooling was supplied coaxially around the fiber. Five human tooth samples (four with calculus and one pristine) were irradiated perpendicular to the tooth surface while the tooth was moved back and forth at 0.3 mm/second, varying between 20 and 180 iterations. The teeth were imaged before and after irradiation using light microscopy with a flashing blue light-emitting diode (LED). An environmental scanning electron microscope imaged each tooth after irradiation. High-order super-Gaussian intensity profiles are observed at the output of a fiber coiled around a 4-in. diameter drum. Super-Gaussian beams have a morehomogenous fluence distribution than Gaussian beams and have a higher energy efficiency for selective ablation. Coaxial water-cooling does not noticeably distort the intensity distribution within 1 mm from the optical fiber. In contrast, lasers focused to a Gaussian cross section (<=50-mm diameter) without fiber propagation and cooled by a water spray are heavily distorted and may lead to variable ablation. Calculus is preferentially ablated at high fluences (>= 2 J/cm^2); below this fluence, stalling occurs because of photo-bleaching of the calculus. Healthy dental hard tissue is not removed at fluences <=3 J/cm^2. Supplying laser light to a tooth using an optical fiber with coaxial water-cooling is determined to be the most appropriate method when selectively removing calculus with a frequency-doubled Ti:sapphire laser. Fluences over 2 J/cm^2 are required to remove calculus efficiently since photo-bleaching stalls calculus

  16. Molecular Beam Mass Spectrometry (MBMS) (Revised) (Fact Sheet)

    SciTech Connect

    Not Available

    2011-07-01

    This fact sheet provides information about Molecular Beam Mass Spectrometry (MBMS) capabilities and applications at NREL's National Bioenergy Center. NREL has six MBMS systems that researchers and industry partners can use to understand thermochemical biomass conversion and biomass composition recalcitrance.

  17. Molecular beam studies of oxygen atom reactions with unsaturated hydrocarbons

    SciTech Connect

    Schmoltner, A.-M.

    1989-10-01

    The dynamics of several elementary reactions relevant to combustion was investigated. The reactive scattering of ground state oxygen atoms with small unsaturated hydrocarbons was studied using a crossed molecular beam apparatus with a rotatable mass spectrometer detector. The infrared and ultraviolet photodissociation of anisole was studied using a rotating beam source/fixed detector apparatus. 253 refs., 64 figs., 4 tabs.

  18. Surface Properties of SiC Layer Grown by Molecular Beam Epitaxy (MBE) with Helicon Sputtering Molecular Beam Source

    NASA Astrophysics Data System (ADS)

    Kakuta, Akira; Moronuki, Nobuyuki; Furukawa, Yuji

    Although there have been some attempts to produce a monocrystalline silicon carbide (SiC) flat surface, the surface properties, such as surface roughness, have not satisfied the required specifications. In this study, we apply a helicon sputtering device to molecular beam epitaxy (MBE) to improve those properties. The helicon sputtering device was used as a molecular beam source for generating a Si molecular beam, where the electric field caused by the helicon coil supplied energy to the sputtered Si molecules. The amount of energy was controlled by the electric power applied to the coil. High-purity acetylene gas was used as the carbon (C) molecular beam source. The substrate was a monocrystalline (111) Si wafer. With the increase of the electric power, that is, the supply of high energy to molecules, the roughness of the surface was improved. A uniform mirror surface of monocrystalline SiC was produced over the entire substrate with a roughness of 1nm (Ra) order.

  19. Femtosecond laser ablation of CuxZr1-x bulk metallic glasses: A molecular dynamics study

    NASA Astrophysics Data System (ADS)

    Marinier, Sébastien; Lewis, Laurent J.

    2015-11-01

    Molecular-dynamics simulations combined with a two-temperature model are used to study laser ablation in CuxZr1-x (x =0.33 ,0.50 ,0.67 ) metallic glasses as well as crystalline CuZr2 in the C11b (MoSi2) structure. Ablation thresholds are found to be 430 ±10 ,450 ±10 ,510 ±10 , and 470 ±10 J/m 2 for a-Cu2Zr , a-CuZr, a-CuZr2, and c-CuZr2, respectively. The larger threshold in amorphous CuZr2 results from a weaker electron-phonon coupling and thus longer electron-ion equilibration time. We observe that the velocity of the pressure waves in the amorphous samples is not affected by the fluence, in contrast to the crystal; this is due to differences in the behavior of the shear modulus with increasing pressure. The heat-affected zone in the different systems is characterized in terms of the melting depth as well as inelastic deformations. The melting depth is found to be smaller in the crystal than in the amorphous targets because of its higher melting temperature. The inelastic deformations are investigated in terms of the von Mises shear strain invariant ηMises; the homogeneous nucleation of shear transformation zones is observed in the glass as reported in previous theoretical and experimental studies. The coalescence of the shear transformation zones is also found at higher fluence.

  20. Matrix Effects on Boron Containing Materials due to Laser Ablation Molecular Isotopic Spectrometry (LAMIS)

    NASA Astrophysics Data System (ADS)

    Brown, Staci R.; Akpovo, Charlemagne A.; Martinez, Jorge; Ford, Alan; Herbert, Kenley; Johnson, Lewis

    2014-03-01

    Laser Induced Breakdown Spectroscopy (LIBS) is a spectroscopic technique that is used for the qualitative and quantitative analysis of materials in the liquid, solid, or gas phase. LIBS can also be used for the detection of isotopic shifts in atomic and diatomic species via Laser-Ablation Molecular Isotopic Spectroscopy (LAMIS). However, any additional elements that are entrained into the plasma other than the element of interest, can affect the extent of ablation and quality of spectra and hence, potentially obscure or aid in the relative abundance assessment for a given element. To address the importance of matrix effects, the isotopic analysis of boron obtained from boron oxide (BO) emission originating from different boron-containing compounds, such as boron nitride (BN), boric acid (H3BO3) , and borax (Na2B4O710H2O), via LIBS has been performed here. Each of these materials has different physical properties and elemental composition in order to illustrate possible challenges for the LAMIS method. A calibration-free model similar to that for the original LAMIS work is used to determine properties of the plasma as the matrix is changed. DTRA

  1. Hyperthermal Pulsed-Laser Ablation Beams for Film Deposition and Surface Microstructural Engineering

    SciTech Connect

    Lowndes, D.H.

    1999-11-08

    This paper presents an overview of pulsed-laser ablation for film deposition and surface microstructure formation. By changing the ambient gas pressure from high vacuum to several Torr (several hundred Pa) and by selecting the pulsed-laser wavelength, the kinetic energy of ablated atoms/ions can be varied from several hundred eV down to {approximately}0.1 eV and films ranging from superhard to nanocrystalline may be deposited. Furthermore, cumulative (multi-pulse) irradiation of a semiconductor surface (e.g. silicon) in an oxidizing gas (0{sub 2}, SF{sub 6}) et atmospheric pressure can produce dense, self-organized arrays of high-aspect-ratio microcolumns or microcones. Thus, a wide range of materials synthesis and processing opportunities result from the hyperthermal flux and reactive growth conditions provided by pulsed-laser ablation.

  2. Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation

    SciTech Connect

    Kim, Jeomoh; Ji, Mi-Hee; Detchprohm, Theeradetch; Yuan, Dajun; Guo, Rui; Liu, Jianping; Asadirad, Mojtaba; Kwon, Min-Ki; Dupuis, Russell D.; Das, Suman; Ryou, Jae-Hyun

    2014-04-07

    We report on the direct patterning of two-dimensional periodic structures in GaN-based light-emitting diodes (LEDs) through laser interference ablation for the fast and reliable fabrication of periodic micro- and nano-structures aimed at enhancing light output. Holes arranged in a two-dimensional hexagonal lattice array having an opening size of 500 nm, depth of 50 nm, and a periodicity of 1 μm were directly formed by three-beam laser interference without photolithography or electron-beam lithography processes. The laser-patterned LEDs exhibit an enhancement in light output power of 20% compared to conventional LEDs having a flat top surface without degradation of electrical and optical properties of the top p-GaN layer and the active region, respectively.

  3. Supersonic molecular beam experiments on surface chemical reactions.

    PubMed

    Okada, Michio

    2014-10-01

    The interaction of a molecule and a surface is important in various fields, and in particular in complex systems like biomaterials and their related chemistry. However, the detailed understanding of the elementary steps in the surface chemistry, for example, stereodynamics, is still insufficient even for simple model systems. In this Personal Account, I review our recent studies of chemical reactions on single-crystalline Cu and Si surfaces induced by hyperthermal oxygen molecular beams and by oriented molecular beams, respectively. Studies of oxide formation on Cu induced by hyperthermal molecular beams demonstrate a significant role of the translational energy of the incident molecules. The use of hyperthermal molecular beams enables us to open up new chemical reaction paths specific for the hyperthermal energy region, and to develop new methods for the fabrication of thin films. On the other hand, oriented molecular beams also demonstrate the possibility of understanding surface chemical reactions in detail by varying the orientation of the incident molecules. The steric effects found on Si surfaces hint at new ways of material fabrication on Si surfaces. Controlling the initial conditions of incoming molecules is a powerful tool for finely monitoring the elementary step of the surface chemical reactions and creating new materials on surfaces.

  4. Reactive Collisions in Crossed Molecular Beams

    DOE R&D Accomplishments Database

    Herschbach, D. R.

    1962-02-01

    The distribution of velocity vectors of reaction products is discussed with emphasis on the restrictions imposed by the conservation laws. The recoil velocity that carries the products away from the center of mass shows how the energy of reaction is divided between internal excitation and translation. Similarly, the angular distributions, as viewed from the center of mass, reflect the partitioning of the total angular momentum between angular momenta of individual molecules and orbital angular momentum associated with their relative motion. Crossed-beam studies of several reactions of the type M + RI yields R + MI are described, where M = K, Rb, Cs, and R = CH{sub 3}, C{sub 3}H{sub 5}, etc. The results show that most of the energy of reaction goes into internal excitation of the products and that the angular distribution is quite anisotropic, with most of the MI recoiling backward (and R forward) with respect to the incoming K beam. (auth)

  5. Molecular beam magnetic deflection behavior of sodium trimers

    SciTech Connect

    George, A.R.

    1983-01-01

    The observation and characterization of the Stern-Gerlach magnetic deflection behavior of sodium trimers in a supersonic molecular beam is reported. As part of a program to apply molecular beam technique to the study of metal clusters, a molecular beam apparatus designed for magnetic deflection and resonance experiments on selected alkali metal cluster species has been developed and is described. Clusters are produced in a supersonic expansion of a pure metal vapor, and are detected mass selectively by photoionization, quadrupole mass analysis, and an ion counting detector. The deflection profiles reveal peaks corresponding to the one Bohr magneton of magnetic moment of the unpaired electron, but in addition show evidence of a distribution of effective magnetic moments extending the full range between the positive and negative one Bohr magneton peaks. In addition, experiments utilizing multiple magnets and trajectory selecting collimators show evidence for magnetic moment and molecular state changes during traversal through the apparatus. Information from time of flight velocity analysis is used in conjunction with the deflection data and with computer simulations to rule out experimental artifacts and to establish that the observed phenomena can be the result of magnetic moment changes and molecular state changes caused by adiabatic and non-adiabatic traversals of avoided level crossings in the Zeeman energy diagram of these molecules. The phenomena have implications for the application of molecular beam Electron Spin Resonance technique to polyatomic molecules.

  6. Molecular changes in bone marrow, tumor and serum after conductive ablation of murine 4T1 breast carcinoma.

    PubMed

    Przybyla, Beata D; Shafirstein, Gal; Vishal, Sagar J; Dennis, Richard A; Griffin, Robert J

    2014-02-01

    Thermal ablation of solid tumors using conductive interstitial thermal therapy (CITT) produces coagulative necrosis in the center of ablation. Local changes in homeostasis for surviving tumor and systemic changes in circulation and distant organs must be understood and monitored in order to prevent tumor re-growth and metastasis. The purpose of this study was to use a mouse carcinoma model to evaluate molecular changes in the bone marrow and surviving tumor after CITT treatment by quantification of transcripts associated with cancer progression and hyperthermia, serum cytokines, stress proteins and the marrow/tumor cross-talk regulator stromal-derived factor 1. Analysis of 27 genes and 22 proteins with quantitative PCR, ELISA, immunoblotting and multiplex antibody assays revealed that the gene and protein expression in tissue and serum was significantly different between ablated and control mice. The transcripts of four genes (Cxcl12, Sele, Fgf2, Lifr) were significantly higher in the bone marrow of treated mice. Tumors surviving ablation showed significantly lower levels of the Lifr and Sele transcripts. Similarly, the majority of transcripts measured in tumors decreased with treatment. Surviving tumors also contained lower levels of SDF-1α and HIF-1α proteins whereas HSP27 and HSP70 were higher. Of 16 serum chemokines, IFNγ and GM-CSF levels were lower with treatment. These results indicate that CITT ablation causes molecular changes which may slow cancer cell proliferation. However, inhibition of HSP27 may be necessary to control aggressiveness of surviving cancer stem cells. The changes in bone marrow are suggestive of possible increased recruitment of circulatory cancer cells. Therefore, the possibility of heightened bone metastasis after thermal ablation needs to be further investigated and inhibition strategies developed, if warranted.

  7. Molecular-beam Studies of Primary Photochemical Processes

    DOE R&D Accomplishments Database

    Lee, Y. T.

    1982-12-01

    Application of the method of molecular-beam photofragmentation translational spectroscopy to the investigation of primary photochemical processes of polyatomic molecules is described. Examples will be given to illustrate how information concerning the energetics, dynamics, and mechanism of dissociation processes can be obtained from the precise measurements of angular and velocity distributions of products in an experiment in which a well-defined beam of molecules is crossed with a laser.

  8. Production of high density molecular beams with wide velocity scanning.

    PubMed

    Sheffield, L S; Woo, S O; Rathnayaka, K D D; Lyuksyutov, I F; Herschbach, D R

    2016-06-01

    We describe modifications of a pulsed rotating supersonic beam source that improve performance, particularly increasing the beam density and sharpening the pulse profiles. As well as providing the familiar virtues of a supersonic molecular beam (high intensity, narrowed velocity distribution, and drastic cooling of rotation and vibration), the rotating source enables scanning the translational velocity over a wide range. Thereby, beams of any atom or molecule available as a gas can be slowed or speeded. Using Xe beams in the slowing mode, we have obtained lab speeds down to about 40 ± 5 m/s with density near 10(11) cm(-3) and in the speeding mode lab speeds up to about 660 m/s and density near 10(14) cm(-3). We discuss some congenial applications. Providing low lab speeds can markedly enhance experiments using electric or magnetic fields to deflect, steer, or further slow polar or paramagnetic molecules. The capability to scan molecular speeds facilitates merging velocities with a codirectional partner beam, enabling study of collisions at very low relative kinetic energies, without requiring either beam to be slow. PMID:27370474

  9. Production of high density molecular beams with wide velocity scanning

    NASA Astrophysics Data System (ADS)

    Sheffield, L. S.; Woo, S. O.; Rathnayaka, K. D. D.; Lyuksyutov, I. F.; Herschbach, D. R.

    2016-06-01

    We describe modifications of a pulsed rotating supersonic beam source that improve performance, particularly increasing the beam density and sharpening the pulse profiles. As well as providing the familiar virtues of a supersonic molecular beam (high intensity, narrowed velocity distribution, and drastic cooling of rotation and vibration), the rotating source enables scanning the translational velocity over a wide range. Thereby, beams of any atom or molecule available as a gas can be slowed or speeded. Using Xe beams in the slowing mode, we have obtained lab speeds down to about 40 ± 5 m/s with density near 1011 cm-3 and in the speeding mode lab speeds up to about 660 m/s and density near 1014 cm-3. We discuss some congenial applications. Providing low lab speeds can markedly enhance experiments using electric or magnetic fields to deflect, steer, or further slow polar or paramagnetic molecules. The capability to scan molecular speeds facilitates merging velocities with a codirectional partner beam, enabling study of collisions at very low relative kinetic energies, without requiring either beam to be slow.

  10. A low Earth orbit molecular beam space simulation facility

    NASA Technical Reports Server (NTRS)

    Cross, J. B.

    1984-01-01

    A brief synopsis of the low Earth orbit (LEO) satellite environment is presented including neutral and ionic species. Two ground based atomic and molecular beam instruments are described which are capable of simulating the interaction of spacecraft surfaces with the LEO environment and detecting the results of these interactions. The first detects mass spectrometrically low level fluxes of reactively and nonreactively surface scattered species as a function of scattering angle and velocity while the second ultrahigh velocity (UHV) molecular beam, laser induced fluorescence apparatus is capable of measuring chemiluminescence produced by either gas phase or gas-surface interactions. A number of proposed experiments are described.

  11. Pulsed rotating supersonic source for merged molecular beams

    NASA Astrophysics Data System (ADS)

    Sheffield, L.; Hickey, M. S.; Krasovitskiy, V.; Rathnayaka, K. D. D.; Lyuksyutov, I. F.; Herschbach, D. R.

    2012-06-01

    We describe a pulsed rotating supersonic beam source, evolved from an ancestral device [M. Gupta and D. Herschbach, J. Phys. Chem. A 105, 1626 (2001)]. The beam emerges from a nozzle near the tip of a hollow rotor which can be spun at high-speed to shift the molecular velocity distribution downward or upward over a wide range. Here we consider mostly the slowing mode. Introducing a pulsed gas inlet system, cryocooling, and a shutter gate eliminated the main handicap of the original device in which continuous gas flow imposed high background pressure. The new version provides intense pulses, of duration 0.1-0.6 ms (depending on rotor speed) and containing ˜1012 molecules at lab speeds as low as 35 m/s and ˜1015 molecules at 400 m/s. Beams of any molecule available as a gas can be slowed (or speeded); e.g., we have produced slow and fast beams of rare gases, O2, Cl2, NO2, NH3, and SF6. For collision experiments, the ability to scan the beam speed by merely adjusting the rotor is especially advantageous when using two merged beams. By closely matching the beam speeds, very low relative collision energies can be attained without making either beam very slow.

  12. Pulsed rotating supersonic source for merged molecular beams

    NASA Astrophysics Data System (ADS)

    Sheffield, Les; Hickey, Mark; Krasovitskiy, Vitaliy; Rathnayaka, Daya; Lyuksyutov, Igor; Herschbach, Dudley

    2012-10-01

    We continue the characterization of a pulsed rotating supersonic beam source. The original device was described by M. Gupta and D. Herschbach, J. Phys. Chem. A 105, 1626 (2001). The beam emerges from a nozzle near the tip of a hollow rotor which can be spun at high-speed to shift the molecular velocity distribution downward or upward over a wide range. Here we consider mostly the slowing mode. Introducing a pulsed gas inlet system, and a shutter gate eliminate the main handicap of the original device in which continuous gas flow imposed high background pressure. The new version provides intense pulses, of duration 0.1--0.6 ms (depending on rotor speed) and containing ˜10^12 molecules at lab speeds as low as 35 m/s and ˜10^15 molecules at 400 m/s. Beams of any molecule available as a gas can be slowed (or speeded); e.g., we have produced slow and fast beams of rare gases, O2, NO2, NH3, and SF6. For collision experiments, the ability to scan the beam speed by merely adjusting the rotor is especially advantageous when using two merged beams. By closely matching the beam speeds, very low relative collision energies can be attained without making either beam very slow.

  13. Laser wakefield acceleration of electron beams beyond 1 GeV from an ablative capillary discharge waveguide

    NASA Astrophysics Data System (ADS)

    Lu, Haiyang; Liu, Mingwei; Wang, Wentao; Wang, Cheng; Liu, Jiansheng; Deng, Aihua; Xu, Jiancai; Xia, Changquan; Li, Wentao; Zhang, Hui; Lu, Xiaoming; Wang, Cheng; Wang, Jianzhou; Liang, Xiaoyan; Leng, Yuxin; Shen, Baifei; Nakajima, Kazuhisa; Li, Ruxin; Xu, Zhizhan

    2011-08-01

    Laser wakefield acceleration of electrons well beyond 1 GeV and optical guiding of ultraintense laser pulses of peak powers up to 160 TW over a 4-cm long ablative capillary discharge plasma channel were experimentally demonstrated. Electron beams, with energies up to 1.8 GeV, were generated by using the 130 TW, 55 fs driving laser pulses. A comparison of oxygen-containing acrylic resin (C:O:H = 4:2:7) capillary and no oxygen-containing polyethylene (C:O:H = 1:0:2) capillary measurements suggests that the injection of electron into the laser wakefield is assisted by the ionization of oxygen K-shell electrons.

  14. Laser wakefield acceleration of electron beams beyond 1 GeV from an ablative capillary discharge waveguide

    SciTech Connect

    Lu Haiyang; Liu Mingwei; Wang Wentao; Wang Cheng; Liu Jiansheng; Deng Aihua; Xu Jiancai; Xia Changquan; Li Wentao; Zhang Hui; Lu Xiaoming; Wang Cheng; Wang Jianzhou; Liang Xiaoyan; Leng Yuxin; Shen Baifei; Li Ruxin; Xu Zhizhan; Nakajima, Kazuhisa

    2011-08-29

    Laser wakefield acceleration of electrons well beyond 1 GeV and optical guiding of ultraintense laser pulses of peak powers up to 160 TW over a 4-cm long ablative capillary discharge plasma channel were experimentally demonstrated. Electron beams, with energies up to 1.8 GeV, were generated by using the 130 TW, 55 fs driving laser pulses. A comparison of oxygen-containing acrylic resin (C:O:H = 4:2:7) capillary and no oxygen-containing polyethylene (C:O:H = 1:0:2) capillary measurements suggests that the injection of electron into the laser wakefield is assisted by the ionization of oxygen K-shell electrons.

  15. Nanoparticle generation and transport resulting from femtosecond laser ablation of ultrathin metal films: Time-resolved measurements and molecular dynamics simulations

    SciTech Connect

    Rouleau, C. M. Puretzky, A. A.; Geohegan, D. B.; Shih, C.-Y.; Wu, C.; Zhigilei, L. V.

    2014-05-12

    The synthesis of metal nanoparticles by ultrafast laser ablation of nanometers-thick metal films has been studied experimentally and computationally. Near-threshold backside laser ablation of 2–20 nm-thick Pt films deposited on fused silica substrates was found to produce nanoparticles with size distributions that were bimodal for the thicker films, but collapsed into a single mode distribution for the thinnest film. Time-resolved imaging of blackbody emission from the Pt nanoparticles was used to reveal the nanoparticle propagation dynamics and estimate their temperatures. The observed nanoparticle plume was compact and highly forward-directed with a well-defined collective velocity that permitted multiple rebounds with substrates to be revealed. Large-scale molecular dynamics simulations were used to understand the evolution of compressive and tensile stresses in the thicker melted liquid films that lead to their breakup and ejection of two groups of nanoparticles with different velocity and size distributions. Ultrafast laser irradiation of ultrathin (few nm) metal films avoids the splitting of the film and appears to be a method well-suited to cleanly synthesize and deposit nanoparticles from semitransparent thin film targets in highly directed beams.

  16. Molecular beam simulation of planetary atmospheric entry - Some recent results.

    NASA Technical Reports Server (NTRS)

    French, J. B.; Reid, N. M.; Nier, A. O.; Hayden, J. L.

    1972-01-01

    Progress is reported in the development of molecular beam techniques to simulate entry into planetary atmospheres. Molecular beam sources for producing fast beams containing CO2 and atomic oxygen are discussed. Results pertinent to the design and calibration of a mass spectrometer ion source for measurement of the Martian atmosphere during the free molecule portion of the entry trajectory are also presented. The shortcomings and advantages of this simulation technique are discussed, and it is demonstrated that even with certain inadequacies much information useful to the ion source design was obtained. Particularly, it is shown that an open-cavity configuration retains sensitivity to atomic oxygen, provides reasonable signal enhancement from the stagnation effect, is not highly sensitive to pitch and yaw effects, and presents no unforeseen problems in measuring CO2 or atomic oxygen.

  17. Full characterization of an intense pulsed hyperthermal molecular beam

    NASA Astrophysics Data System (ADS)

    Watanabe, D.; Che, D.-C.; Fukuyama, T.; Hashinokuchi, M.; Teraoka, Y.; Kasai, T.

    2005-05-01

    A molecular beam technique for generating an intense pulsed hyperthermal molecular beam (pulsed HTMB) was developed. The beam source consists of a pulse valve, a cooling-water bottle that protects the pulse valve from heat transfer of the high temperature nozzle, and a nozzle with a heater. The point was a pulse-valve operation with the high temperature nozzle which was 30-mm long and was made of pyrolytic boron nitride. The pulsed HTMB of HCl was practically generated. The total beam intensity of the pulsed HTMB was measured by a quadrupole mass spectrometer. It was determined that the beam intensity of the pulsed HTMB was two orders of magnitude larger than that obtained in continuous-HTMB conditions. The pulsed HTMB of HCl was fully characterized by means of (2+1) resonance-enhanced multiphoton ionization and ion time-of-flight techniques. We found that the velocity distribution of the pulsed HTMB was well expressed as supersonic molecular beams. At the highest nozzle temperature of 1400 K, the mean translational energy value of HCl molecules was 1.38 eV. The translational energy distribution of the pulsed HTMB covered a range from 0.8 to 1.6 eV. The fraction of higher translational energy molecules greater than 1.0 eV was 80% in the 1400 K nozzle. The rotational state distributions of HCl molecules in the pulsed HTMB were expressed as the Boltzmann distribution. While the rotational temperature decreased by an adiabatic expansion of the beam, the vibrational temperature, which was determined by the ratio of the ground-state population to the excited state one, almost equaled the nozzle temperature.

  18. The influence of the Q-switched and free-running Er:YAG laser beam characteristics on the ablation of root canal dentine

    NASA Astrophysics Data System (ADS)

    Papagiakoumou, Eirini; Papadopoulos, Dimitrios N.; Khabbaz, Marouan G.; Makropoulou, Mersini I.; Serafetinides, Alexander A.

    2004-06-01

    Laser based dental treatment is attractive to many researchers. Lasers in the 3 μm region, as the Er:YAG, are suitable especially for endodontic applications. In this study a pulsed free-running and Q-switched laser was used for the ablation experiments of root canal dentine. The laser beam was either directly focused on the dental tissue or delivered to it through an infrared fiber. For different spatial beam distributions, energies, number of pulses and both laser operations the quality characteristics (crater's shape formation, ablation efficiency and surface characteristics modification) were evaluated using scanning electron microscopy (SEM). The craters produced, generally, reflect the relevant beam profile. Inhomogeneous spatial beam profiles and short pulse duration result in cracks formation and lower tissue removal efficiency, while longer pulse durations cause hard dentine fusion. Any beam profile modification, due to laser characteristics variations and the specific delivering system properties, is directly reflected in the ablation crater shape and the tissue removal efficiency. Therefore, the laser parameters, as fluence, pulse repetition rate and number of pulses, have to be carefully adjusted in relation to the desirable result.

  19. Synthesis, characterization, and pulsed laser ablation of molecular sieves for thin film applications

    NASA Astrophysics Data System (ADS)

    Munoz, Trinidad, Jr.

    1998-12-01

    Molecular sieves are one class of crystalline low density metal oxides which are made up of one-, two-, and three dimensional pores and/or cages. We have investigated the synthesis and characterization of metal substituted aluminophosphates and all silica molecular sieves for thin film applications. A new copper substituted aluminophosphate, CuAPO-5 has been synthesized and characterized using x-ray powder diffraction, FT-IR spectroscopy and scanning electron microscopy. Electron spin resonance and electron spin echo modulation provided supporting evidence of framework incorporation of Cu(II) ions. Thus, an exciting addition has been added to the family of metal substituted aluminophosphates where substitution of the metal has been demonstrated as framework species. Also presented here is the synthesis and characterization of an iron substituted aluminophosphate, FeAPO-5, and an all silica zeolite, UTD-1 for thin film applications. Pulsed laser ablation has been employed as the technique to generate thin films. Here an excimer laser (KrFsp*, 248 nm) was used to deposit the molecular sieves on a variety of substrates including polished silicon, titanium nitride, and porous stainless steel disks. The crystallinity of the deposited films was enhanced by a post hydrothermal treatment. A vapor phase treatment of the laser deposited FeAPO-5 films has been shown to increase the crystallinity of the film without increasing film thickness. Thin films of the FeAPO-5 molecular sieves were subsequently used as the dielectric phase in capacitive type chemical sensors. The capacitance change of the FeAPO-5 devices to the relative moisture makes them potential humidity sensors. The all silica zeolite UTD-1 thin films were deposited on polished silicon and porous supports. A brief post hydrothermal treatment of the laser deposited films deposited on polished silicon and porous metal supports resulted in oriented film growth lending these films to applications in gas separations

  20. Resistively Heated SiC Nozzle for Generating Molecular Beams

    NASA Technical Reports Server (NTRS)

    Cagiano, Steven; Abell, Robert; Patrick, Edward; Bendt, Miri; Gundersen, Cynthia

    2007-01-01

    An improved nozzle has been developed to replace nozzles used previously in an apparatus that generates a substantially unidirectional beam of molecules passing through a vacuum at speeds of several kilometers per second. The basic principle of operation of the apparatus is the same for both the previous and the present nozzle designs. The main working part of the nozzle is essentially a cylinder that is closed except that there is an inlet for a pressurized gas and, at one end, the cylinder is closed by a disk that contains a narrow central hole that serves as an outlet. The cylinder is heated to increase the thermal speeds of the gas molecules into the desired high-speed range. Heated, pressurized gas escapes through the outlet into a portion of the vacuum chamber that is separated, by a wall, from the rest of the vacuum chamber. In this portion of the vacuum chamber, the gas undergoes a free jet expansion. Most of the expanded gas is evacuated and thus does not become part of the molecular beam. A small fraction of the expanded beam passes through a narrow central orifice in the wall and thereby becomes a needle- thin molecular beam in the portion of the vacuum on the downstream side of the wall.

  1. Coupled molecular dynamics-Monte Carlo model to study the role of chemical processes during laser ablation of polymeric materials

    NASA Astrophysics Data System (ADS)

    Prasad, Manish; Conforti, Patrick F.; Garrison, Barbara J.

    2007-08-01

    The coarse grained chemical reaction model is enhanced to build a molecular dynamics (MD) simulation framework with an embedded Monte Carlo (MC) based reaction scheme. The MC scheme utilizes predetermined reaction chemistry, energetics, and rate kinetics of materials to incorporate chemical reactions occurring in a substrate into the MD simulation. The kinetics information is utilized to set the probabilities for the types of reactions to perform based on radical survival times and reaction rates. Implementing a reaction involves changing the reactants species types which alters their interaction potentials and thus produces the required energy change. We discuss the application of this method to study the initiation of ultraviolet laser ablation in poly(methyl methacrylate). The use of this scheme enables the modeling of all possible photoexcitation pathways in the polymer. It also permits a direct study of the role of thermal, mechanical, and chemical processes that can set off ablation. We demonstrate that the role of laser induced heating, thermomechanical stresses, pressure wave formation and relaxation, and thermochemical decomposition of the polymer substrate can be investigated directly by suitably choosing the potential energy and chemical reaction energy landscape. The results highlight the usefulness of such a modeling approach by showing that various processes in polymer ablation are intricately linked leading to the transformation of the substrate and its ejection. The method, in principle, can be utilized to study systems where chemical reactions are expected to play a dominant role or interact strongly with other physical processes.

  2. Applying CLIPS to control of molecular beam epitaxy processing

    NASA Technical Reports Server (NTRS)

    Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

    1990-01-01

    A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

  3. Population inversions in ablation plasmas generated by intense electron beams. Final report, 1 November 1985-31 October 1988

    SciTech Connect

    Gilgenbach, R.M.; Kammash, T.; Brake, M.L.

    1988-11-01

    Experiments during the past three years have concerned the generation and spectroscopic study of electron beam-driven carbon plasmas in order to explore the production of optical and ultraviolet radiation from nonequilibrium populations. The output of MELBA (Michigan Electron Long Beam Accelerator), has been connected to an electron-beam diode consisting of an aluminum (or brass) cathode stalk and a carbon anode. Magnetic-field coils were designed, procured, and utilized to focus the electron beam. A side viewing port permitted spectroscopic diagnostics to view across the surface of the anode. Spectroscopic diagnosis was performed using a 1-m spectrograph capable of operation from the vacuum-ultraviolet through the visible. This spectrograph is coupled to a 1024-channel optical multichannel analyzer. Spectra taken during the initial 400-ns period of the e-beam pulse showed a low effective-charge plasma with primarily molecular components (C/sub 2/, CH) as well as atomic hydrogen and singly ionized carbon (CII). When the generator pulse was crowbarred after the first 400 ns, the spectra revealed a continuation of the low-charge-state plasma. At times greater than 400 ns in non-crowbarred shots, the spectra revealed a highly ionized plasma with a very large intensity line at 2530 Angstroms due to CIV (5g-4f), and lower-intensity lines due to CIII and CII. This CIV line emission increased with time, peaking sharply between 750 and 900 ns, and decayed rapidly in less than 100 ns. Emission from these high ionization states may be due to electron beam-plasma instabilities, as this emission was accompanied by high levels of radio frequency and microwave emission.

  4. Experimental demonstration of a controllable electrostatic molecular beam splitter.

    PubMed

    Deng, Lianzhong; Liang, Yan; Gu, Zhenxing; Hou, Shunyong; Li, Shengqiang; Xia, Yong; Yin, Jianping

    2011-04-01

    We experimentally demonstrate a controllable electrostatic beam splitter for guided ND3 molecules with a single Y-shaped charged wire and a homogeneous bias field generated by a charged metallic parallel-plate capacitor. We study the dependences of the splitting ratio R of the guided ND3 beam and its relative guiding efficiency η on the voltage difference between two output arms of the splitter. The influences of the molecular velocity v and the cutting position L on the splitting ratio R are investigated as well, and the guiding and splitting dynamic processes of cold molecules are simulated. Our study shows that the splitting ratio R of our splitter can be conveniently adjusted from 10% to 90% by changing ΔU from -6  kV to +6  kV, and the simulated results are consistent with our experimental ones.

  5. Molecular Beam Optical Stark Spectroscopy of Magnesium Deuteride

    NASA Astrophysics Data System (ADS)

    Steimle, Timothy; Zhang, Ruohan; Wang, Hailing

    2014-06-01

    Light polar, paramagnetic molecules, such as magnesium hydride, MgH, are attractive for slowing and trapping experiments because these molecules have both non-zero permanent electric dipole, μel, and magnetic dipole, μm moments. The permanent electric dipole moment is particularly relevant to Stark deceleration which depends on the ratio of the Stark shift to molecular mass. Here we report on the Stark effect in the (0,0) A2Π - X 2Σ+ band system of a cold molecular beam sample of magnesium deuteride, MgD. The lines associated with the lowest rotational levels are detected for the first time. The field-free spectrum was analyzed to produce an improved set of fine structure parameters for the A2Π(v = 0) state. The observed electric field induced splittings and shifts were analyzed to produce permanent electric dipole moments, μel,of 2.561(10)D and 1.34(8)D for A2Π(v = 0) and X2Σ+(v=0)states, respectively. This is the first molecular beam study of MgD.

  6. Radiofrequency ablation of drug-resistant cancer cells using molecularly targeted carboxyl-functionalized biodegradable graphene.

    PubMed

    Sasidharan, Abhilash; Sivaram, Amal J; Retnakumari, Archana P; Chandran, Parwathy; Malarvizhi, Giridharan Loghanathan; Nair, Shantikumar; Koyakutty, Manzoor

    2015-04-01

    Under ultralow radiofrequency (RF) power, transferrin-conjugated graphene nanoparticles can thermally ablate drug- or radiation-resistant cancer cells very effectively. The results suggest that graphene-based RF hyperthermia can be an efficient method to manage drug-/radiation-resistant cancers. PMID:25586821

  7. Investigation of ablation thresholds of optical materials using 1-µm-focusing beam at hard X-ray free electron laser.

    PubMed

    Koyama, Takahisa; Yumoto, Hirokatsu; Senba, Yasunori; Tono, Kensuke; Sato, Takahiro; Togashi, Tadashi; Inubushi, Yuichi; Katayama, Tetsuo; Kim, Jangwoo; Matsuyama, Satoshi; Mimura, Hidekazu; Yabashi, Makina; Yamauchi, Kazuto; Ohashi, Haruhiko; Ishikawa, Tetsuya

    2013-07-01

    We evaluated the ablation thresholds of optical materials by using hard X-ray free electron laser. A 1-µm-focused beam with 10-keV of photon energy from SPring-8 Angstrom Compact free electron LAser (SACLA) was irradiated onto silicon and SiO2 substrates, as well as the platinum and rhodium thin films on these substrates, which are widely used for optical materials such as X-ray mirrors. We designed and installed a dedicated experimental chamber for the irradiation experiments. For the silicon substrate irradiated at a high fluence, we observed strong mechanical cracking at the surface and a deep ablation hole with a straight side wall. We confirmed that the ablation thresholds of uncoated silicon and SiO2 substrates agree with the melting doses of these materials, while those of the substrates under the metal coating layer are significantly reduced. The ablation thresholds obtained here are useful criteria in designing optics for hard X-ray free electron lasers.

  8. A molecular beam epitaxy facility for in situ neutron scattering

    SciTech Connect

    Dura, J. A.; LaRock, J.

    2009-07-15

    A molecular beam epitaxy (MBE) facility has been built to enable in situ neutron scattering measurements during growth of epitaxial layers. While retaining the full capabilities of a research MBE chamber, this facility has been optimized for polarized neutron reflectometry measurements. Optimization includes a compact lightweight portable design, a neutron window, controllable magnetic field, deposition across a large 76 mm diameter sample with exceptional flux uniformity, and sample temperatures continuously controllable from 38 to 1375 K. A load lock chamber allows for sample insertion, storage of up to 4 samples, and docking with other facilities. The design and performance of this chamber are described here.

  9. Molecular beam epitaxy growth of monolayer niobium diselenide flakes

    NASA Astrophysics Data System (ADS)

    Hotta, Takato; Tokuda, Takuto; Zhao, Sihan; Watanabe, Kenji; Taniguchi, Takashi; Shinohara, Hisanori; Kitaura, Ryo

    2016-09-01

    Monolayer niobium diselenide (NbSe2) is prepared through molecular beam epitaxy with hexagonal boron nitride (hBN) as substrates. Atomic force microscopy and the Raman spectroscopy have shown that the monolayer NbSe2 grown on the hBN possesses triangular or truncated triangular shape whose lateral size amounts up to several hundreds of nanometers. We have found that the precisely controlled supply rate and ultraflat surface of hBN plays an important role in the growth of the monolayer NbSe2.

  10. Molecular beam epitaxy grown indium self-assembled plasmonic nanostructures

    NASA Astrophysics Data System (ADS)

    Gibson, Ricky; Gehl, Michael; Sears, Jasmine; Zandbergen, Sander; Nader, Nima; Keiffer, Patrick; Hendrickson, Joshua; Arnoult, Alexandre; Khitrova, Galina

    2015-09-01

    We describe molecular beam epitaxy (MBE) growth conditions for self-assembled indium nanostructures, or islands, which allow for the tuning of the density and size of the indium nanostructures. How the plasmonic resonance of indium nanostructures is affected by the island density, size, distribution in sizes, and indium purity of the nanostructures is explored. These self-assembled nanostructures provide a platform for integration of resonant and non-resonant plasmonic structures within a few nm of quantum wells (QWs) or quantum dots (QDs) in a single process. A 4× increase in peak photoluminescence intensity is demonstrated for near-surface QDs resonantly coupled to indium nanostructures.

  11. Molecular-Beam Epitaxy Of IrSi3

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon

    1991-01-01

    Molecular-beam epitaxy grows layers of iridium silicide (IrSi3) on silicon at temperatures of 630 to 800 degrees C. Particularly useful as photodetector material because it forms Schottky diodes having potential barriers of only 0.12 to 0.15 eV - lowest of any metal on silicon. Photodiodes sensitive to infrared radiation at wavelengths as large as 8 to 10 micrometers. New, lower formation temperature expected to enable growth of arrays of IrSi3/Si infrared detectors on Si wafers without thermally damaging image-processing circuitry integrated on wafers.

  12. Molecular beam epitaxial growth of GaP on Si

    NASA Astrophysics Data System (ADS)

    Wright, S. L.; Kroemer, H.; Inada, M.

    1984-04-01

    The molecular beam epitaxial growth of GaP on Si was investigated, with the aim of at least approaching device-quality interfaces. Gallium-primed growth on (211)-oriented substrates yielded layers which were free of antiphase domains, and which were of much higher quality than growths on other orientations. A tentative energy-band lineup is proposed, which is consistent with the electrical data. Heterojunction bipolar transistors were fabricated with emitter injection efficiencies up to 90 percent, in spite of indications that the epitaxial emitter layer was far less heavily doped than the base.

  13. Hyperthermal molecular beam source using a non-diaphragm-type small shock tube

    NASA Astrophysics Data System (ADS)

    Yoshimoto, Yuta; Osuka, Kenichi; Miyoshi, Nobuya; Kinefuchi, Ikuya; Takagi, Shu; Matsumoto, Yoichiro

    2016-10-01

    We have developed a hyperthermal molecular beam source employing a non-diaphragm-type small shock tube for gas-surface interaction studies. Unlike conventional shock-heated beam sources, the capability of repetitive beam generation without the need for replacing a diaphragm makes our beam source suitable for scattering experiments, which require signal accumulation for a large number of beam pulses. The short duration of shock heating alleviates the usual temperature limit due to the nozzle material, enabling the generation of a molecular beam with higher translational energy or that containing dissociated species. The shock-heated beam is substantially free from surface-contaminating impurities that are pronounced in arc-heated beams. We characterize the properties of nitrogen and oxygen molecular beams using the time-of-flight method. When both the timing of beam extraction and the supply quantity of nitrogen gas are appropriately regulated, our beam source can generate a nitrogen molecular beam with translational energy of approximately 1 eV, which corresponds to the typical activation energy of surface reactions. Furthermore, our beam source can generate an oxygen molecular beam containing dissociated oxygen atoms, which can be a useful probe for surface oxidation. The dissociation fraction along with the translational energy can be adjusted through the supply quantity of oxygen gas.

  14. A molecular beam/quadrupole mass spectrometer system with synchronized beam modulation and digital waveform analysis

    NASA Technical Reports Server (NTRS)

    Pellett, G. L.; Adams, B. R.

    1983-01-01

    A performance evaluation is conducted for a molecular beam/mass spectrometer (MB/MS) system, as applied to a 1-30 torr microwave-discharge flow reactor (MWFR) used in the formation of the methylperoxy radical and a study of its subsequent destruction in the presence or absence of NO(x). The modulated MB/MS system is four-staged and differentially pumped. The results obtained by the MWFR study is illustrative of overall system performance, including digital waveform analysis; significant improvements over previous designs are noted in attainable S/N ratio, detection limit, and accuracy.

  15. In-plane aligned YBCO film on textured YSZ buffer layer deposited on NiCr alloy tape by laser ablation with only O+ ion beam assistance

    NASA Astrophysics Data System (ADS)

    Tang Huang, Xin; Qing Wang, You; Wang, Qiu Liang; Chen, Qing Ming

    2000-02-01

    High critical current density and in-plane aligned YBa2 Cu3 O7-x (YBCO) film on a textured yttria-stabilized zirconia (YSZ) buffer layer deposited on NiCr alloy (Hastelloy c-275) tape by laser ablation with only O+ ion beam assistance was fabricated. The values of the x-ray phi-scan full width at half-maximum (FWHM) for YSZ(202) and YBCO(103) are 18° and 11°, respectively. The critical current density of YBCO film is 7.9 × 105 A cm-2 at liquid nitrogen temperature and zero field, and its critical temperature is 90 K.

  16. GaN quantum dots by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Daudin, B.; Adelmann, C.; Gogneau, N.; Sarigiannidou, E.; Monroy, E.; Fossard, F.; Rouvière, J. L.

    2004-03-01

    The conditions to grow GaN quantum dots (QDs) by plasma-assisted molecular beam epitaxy will be examined. It will be shown that, depending on the Ga/N ratio value, the growth mode of GaN deposited on AlN can be either of the Stranski-Krastanow (SK) or of the Frank-Van der Merwe type. Accordingly, quantum wells or QDs can be grown, depending on the desired application. In the particular case of modified SK growth mode, it will be shown that both plastic and elastic strain relaxation can coexist. Growth of GaN QDs with N-polarity will also be discussed and compared to their counterpart with Ga polarity.

  17. Crossed-molecular-beams reactive scattering of oxygen atoms

    SciTech Connect

    Baseman, R.J.

    1982-11-01

    The reactions of O(/sup 3/P) with six prototypical unsaturated hydrocarbons, and the reaction of O(/sup 1/D) with HD, have been studied in high-resolution crossed-molecular-beams scattering experiments with mass-spectrometric detection. The observed laboratory-product angular and velocity distributions unambiguously identify parent-daughter ion pairs, distinguish different neutral sources of the same ion, and have been used to identify the primary products of the reactions. The derived center-of-mass product angular and translational energy distributions have been used to elucidate the detailed reaction dynamics. These results demonstrate that O(/sup 3/P)-unsaturated hydrocarbon chemistry is dominated by single bond cleavages, leading to radical products exclusively.

  18. Molecular beam-thermal hydrogen desorption from palladium

    SciTech Connect

    Lobo, R. F. M.; Berardo, F. M. V.; Ribeiro, J. H. F.

    2010-04-15

    Among the most efficient techniques for hydrogen desorption monitoring, thermal desorption mass spectrometry is a very sensitive one, but in certain cases can give rise to uptake misleading results due to residual hydrogen partial pressure background variations. In this work one develops a novel thermal desorption variant based on the effusive molecular beam technique that represents a significant improvement in the accurate determination of hydrogen mass absorbed on a solid sample. The enhancement in the signal-to-noise ratio for trace hydrogen is on the order of 20%, and no previous calibration with a chemical standard is required. The kinetic information obtained from the hydrogen desorption mass spectra (at a constant heating rate of 1 deg. C/min) accounts for the consistency of the technique.

  19. InPBi Single Crystals Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Wang, K.; Gu, Y.; Zhou, H. F.; Zhang, L. Y.; Kang, C. Z.; Wu, M. J.; Pan, W. W.; Lu, P. F.; Gong, Q.; Wang, S. M.

    2014-06-01

    InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V = P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III-V compound family member for heterostructures. The Bi concentration is found to be 2.4 +/- 0.4% with 94 +/- 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4-2.7 μm which can't be explained by the existing theory.

  20. Molecular Beam Epitaxy Growth of Iron Phthalocyanine Nanostructures

    SciTech Connect

    Debnath, A. K.; Samanta, S.; Singh, Ajay; Aswal, D. K.; Gupta, S. K.; Yakhmi, J. V.

    2009-06-29

    FePc films of different thickness have been deposited by molecular beam epitaxy (MBE) as a function of substrate temperature (25-300 deg. C) and deposition rate (0.02-0.07 nm/s). The morphology of a 60 nm alpha-phase film has been tuned from nanobrush (nearly parallel nanorods aligned normal to the substrate plane) to nanoweb (nanowires forming a web-like structure in the plane of the substrate) by changing the deposition rate from 0.02 to 0.07 nm/s. We propose growth mechanisms of nanoweb and nanobrush morphology based on the van der Waals (vdW) epitaxy. For air exposed FePc films I-V hysteresis was observed at 300 K and it is attributed to surface traps created by chemisorbed oxygen.

  1. InPBi Single Crystals Grown by Molecular Beam Epitaxy

    PubMed Central

    Wang, K.; Gu, Y.; Zhou, H. F.; Zhang, L. Y.; Kang, C. Z.; Wu, M. J.; Pan, W. W.; Lu, P. F.; Gong, Q.; Wang, S. M.

    2014-01-01

    InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V = P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III–V compound family member for heterostructures. The Bi concentration is found to be 2.4 ± 0.4% with 94 ± 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4–2.7 μm which can't be explained by the existing theory. PMID:24965260

  2. Atmospheric processes on ice nanoparticles in molecular beams

    PubMed Central

    Fárník, Michal; Poterya, Viktoriya

    2014-01-01

    This review summarizes some recent experiments with ice nanoparticles (large water clusters) in molecular beams and outlines their atmospheric relevance: (1) Investigation of mixed water–nitric acid particles by means of the electron ionization and sodium doping combined with photoionization revealed the prominent role of HNO3 molecule as the condensation nuclei. (2) The uptake of atmospheric molecules by water ice nanoparticles has been studied, and the pickup cross sections for some molecules exceed significantly the geometrical sizes of the ice nanoparticles. (3) Photodissociation of hydrogen halides on water ice particles has been shown to proceed via excitation of acidically dissociated ion pair and subsequent biradical generation and H3O dissociation. The photodissociation of CF2Cl2 molecules in clusters is also mentioned. Possible atmospheric consequences of all these results are briefly discussed. PMID:24790973

  3. Broadband optical monitoring of filters fabricated using molecular beam deposition

    NASA Astrophysics Data System (ADS)

    Powell Fisher, Shari; Hale, Christopher C.; Muirhead, Ian T.; Mathew, John G. H.; Cornwell, Robert J.

    1990-08-01

    A broadband optical monitoring system to assist with the control of complex filter designs has been implemented on a newly installed Molecular Beam Deposition (MBD) facility which has been adapted for the growth of optical thin films. When depositing a multilayer structure like a Fabry- Perot etalon with very narrow features whose location depends upon a precise optical thickness the broadband optical monitor is an essential addition to process control. In addition to providing the capability to observe the growth of a sensitive optical feature the broadband optical monitor is used to calibrate other process control methods. This saves a considerable amount of processing time and demonstrates the cost effectiveness of such a system. By the judicious use of broadband optical monitoring a very high degree of control and efficiency is added to MBD processing of optical thin films. 1.

  4. A hydrogen ion beam method of molecular density measurement inside a 4.2-K beam tube

    SciTech Connect

    Alinovsky, N.; Anashin, V.; Beschasny, P.

    1994-06-01

    In our first experiments on synchrotron radiation-induced photodesorption in a 4.2-K beam tube, the moleculm density was measured by room temperature ion gauges and RGAs outside the beam tube. The molecular density inside the 4.2-K beam tube was therefore unknown, since the mean molecular speed of photodesorbed molecules had not been measured. To determine the density inside the 4.2-K beam tube we have developed a direct method of measurement utilizing the neutralization of H{sup +} beams, which are proportional to gas density. The hydrogen ion beams (up to 20 keV, {approximately}1 {mu}A) are extracted from an rf ion source and guided into the cold beam tube by a bending magnet. The H{sup 0} and H{sup {minus}} produced in the beam tube are magnetically separated from H{sup {minus}} and detected with secondary electron multipliers (SEMs). Small superconducting dipole magnets located near the center of the beam tube allow a {approximately}20-cm segment of the injected ion beam to be offset a few mm from the injection axis; detection of H{sup 0} and H{sup {minus}} produced along this offset segment provides a localized density measurement. If necessary, detector background due to synchrotron radiation photons can be discriminated against by gating the detector on between the bursts of synchrotron radiation. The experimental setup and initial data will be presented.

  5. A high pressure modulated molecular beam mass spectrometric sampling system

    NASA Technical Reports Server (NTRS)

    Stearns, C. A.; Kohl, F. J.; Fryburg, G. C.; Miller, R. A.

    1977-01-01

    The current state of understanding of free-jet high pressure sampling is critically reviewed and modifications of certain theoretical and empirical considerations are presented. A high pressure, free-jet expansion, modulated molecular beam, mass spectrometric sampling apparatus was constructed and this apparatus is described in detail. Experimental studies have demonstrated that the apparatus can be used to sample high temperature systems at pressures up to one atmosphere. Condensible high temperature gaseous species have been routinely sampled and the mass spectrometric detector has provided direct identification of sampled species. System sensitivity is better than one tenth of a part per million. Experimental results obtained with argon and nitrogen beams are presented and compared to theoretical predictions. These results and the respective comparison are taken to indicate acceptable performance of the sampling apparatus. Results are also given for two groups of experiments related to hot corrosion studies. The formation of gaseous sodium sulfate in doped methane-oxygen flames was characterized and the oxidative vaporization of metals was studied in an atmospheric pressure flowing gas system to which gaseous salt partial pressures were added.

  6. Effects of endovenous laser ablation on vascular tissue: molecular genetics approach

    PubMed Central

    Alur, İhsan; Dodurga, Yavuz; Güneş, Tevfik; Eroglu, Canan; Durna, Fırat; Türk, Nilay Şen; Adıgüzel, Esat; Emrecan, Bilgin

    2015-01-01

    Background: Endovenous laser ablation (EVLA) is a treatment option for lower extremity varicose veins. In the present study, we investigate to the genetic changes and possibility of living tissue in the saphenous vein wall after the EVLA procedure. Methods: Eleven saphenous vein grafts were randomized in two groups: (1) 4 cm SVG segments of performed EVLA procedure in study group, (2) 4 cm segments of SVG none performed EVLA procedure in control group. SVG were taken from the remnants of distal saphenous vein grafts prepared for the bypass procedure but not used. SVG was approximately 8 cm in length and was divided into two parts 4 cm in length. One half was exposed to laser energy, while the other half of the same vein graft was untreated as a control. EVLA was performed on complete saphenous veins in the study group. Abnormal genetic changes of the SVG were observed with a Tri-Reagent method and quantified with a Nanodrop™ spectrophotometer. Results: Histopathological changes indicated that the intima including the endothelium was completely necrotized in the study group. It was observed that intimal thermal-energy-induced injury did not reach the media. Histopathological examination showed that homogenous eosinophilic discoloration and coagulation necrosis characterized the laser related thermal damage as well. Conclusions: In this preliminary study, we found that living tissue remained in the SVG wall after application of laser ablation, and we also detected abnormal genetic changes in the study group compared with the control group. PMID:26379903

  7. Cerenkov emission induced by external beam radiation stimulates molecular fluorescence

    SciTech Connect

    Axelsson, Johan; Davis, Scott C.; Gladstone, David J.; Pogue, Brian W.

    2011-07-15

    Purpose: Cerenkov emission is induced when a charged particle moves faster than the speed of light in a given medium. Both x-ray photons and electrons produce optical Cerenkov photons in everyday radiation therapy of tissue; yet, this phenomenon has never been fully documented. This study quantifies the emissions and also demonstrates that the Cerenkov emission can excite a fluorophore, protoporphyrin IX (PpIX), embedded in biological phantoms. Methods: In this study, Cerenkov emission induced by radiation from a clinical linear accelerator is investigated. Biological mimicking phantoms were irradiated with x-ray photons, with energies of 6 or 18 MV, or electrons at energies 6, 9, 12, 15, or 18 MeV. The Cerenkov emission and the induced molecular fluorescence were detected by a camera or a spectrometer equipped with a fiber optic cable. Results: It is shown that both x-ray photons and electrons, at MeV energies, produce optical Cerenkov photons in tissue mimicking media. Furthermore, we demonstrate that the Cerenkov emission can excite a fluorophore, protoporphyrin IX (PpIX), embedded in biological phantoms. Conclusions: The results here indicate that molecular fluorescence monitoring during external beam radiotherapy is possible.

  8. Development of Ultra Small Shock Tube for High Energy Molecular Beam Source

    SciTech Connect

    Miyoshi, Nobuya; Nagata, Shuhei; Kinefuchi, Ikuya; Shimizu, Kazuya; Matsumoto, Yoichiro; Takagi, Shu

    2008-12-31

    A molecular beam source exploiting a small shock tube is described for potential generation of high energy beam in a range of 1-5 eV without any undesirable impurities. The performance of a non-diaphragm type shock tube with an inner diameter of 2 mm was evaluated by measuring the acceleration and attenuation process of shock waves. With this shock tube installed in a molecular beam source, we measured the time-of-flight distributions of shock-heated beams, which demonstrated the ability of controlling the beam energy with the initial pressure ratio of the shock tube.

  9. Dosimetric comparison of a 6-MV flattening-filter and a flattening-filter-free beam for lung stereotactic ablative radiotherapy treatment

    NASA Astrophysics Data System (ADS)

    Kim, Yon-Lae; Chung, Jin-Beom; Kim, Jae-Sung; Lee, Jeong-Woo; Kim, Jin-Young; Kang, Sang-Won; Suh, Tae-Suk

    2015-11-01

    The purpose of this study was to test the feasibility of clinical usage of a flattening-filter-free (FFF) beam for treatment with lung stereotactic ablative radiotherapy (SABR). Ten patients were treated with SABR and a 6-MV FFF beam for this study. All plans using volumetric modulated arc therapy (VMAT) were optimized in the Eclipse treatment planning system (TPS) by using the Acuros XB (AXB) dose calculation algorithm and were delivered by using a Varian TrueBeam ™ linear accelerator equipped with a high-definition (HD) multi-leaf collimator. The prescription dose used was 48 Gy in 4 fractions. In order to compare the plan using a conventional 6-MV flattening-filter (FF) beam, the SABR plan was recalculated under the condition of the same beam settings used in the plan employing the 6-MV FFF beam. All dose distributions were calculated by using Acuros XB (AXB, version 11) and a 2.5-mm isotropic dose grid. The cumulative dosevolume histograms (DVH) for the planning target volume (PTV) and all organs at risk (OARs) were analyzed. Technical parameters, such as total monitor units (MUs) and the delivery time, were also recorded and assessed. All plans for target volumes met the planning objectives for the PTV ( i.e., V95% > 95%) and the maximum dose ( i.e., Dmax < 110%) revealing adequate target coverage for the 6-MV FF and FFF beams. Differences in DVH for target volumes (PTV and clinical target volume (CTV)) and OARs on the lung SABR plans from the interchange of the treatment beams were small, but showed a marked reduction (52.97%) in the treatment delivery time. The SABR plan with a FFF beam required a larger number of MUs than the plan with the FF beam, and the mean difference in MUs was 4.65%. This study demonstrated that the use of the FFF beam for lung SABR plan provided better treatment efficiency relative to 6-MV FF beam. This strategy should be particularly beneficial for high dose conformity to the lung and decreased intra-fraction movements because of

  10. Data Analyses in Molecular Beam Experiments: Theory and Application.

    NASA Astrophysics Data System (ADS)

    Bandukwalla Pruisken, Gulnar

    The first part of this work deals with the general subject of data analysis in molecular beam experiments. We develop new and general schemes for extracting the centre -of-mass frame differential photodissociation cross section from the fragment time-of-flight (TOF) distributions obtained in laboratory experiments. The methodology involves elementary numerical computations and naturally incorporates the experimental resolution and statistical error analysis. As an important part of these developments, we perform a series of computer experiments which simulate the true situation in the laboratory. These simulations produce 'synthetic' TOF data and provide a perfect medium for testing and further developing our ideas on data analysis. Our studies have resulted in a particularly simple and powerful iterative procedure which we call the 'Inverse Quadrature Method'. This approach is a variant on the Gauss Quadrature technique for numerical integration and satisfies our criteria for TOF data analysis in the most efficient manner. We have also introduced another method called the 'Method of Moments' which is particularly suited for on-line data analysis. In the second part of this work, the new methodology is applied to a real laboratory experiment. We report the results of the one and two photon dissociation of Fe(CO) _5 at 248 nm. The experiment was done using a crossed laser-molecular beam set up with a rotatable mass spectrometer. Time of flight spectra of the primary iron containing photofragments were recorded under collision free conditions. The centre-of-mass velocity distributions extracted from the TOF data indicate that the one photon absorption process involves a sequential uncorrelated loss of CO ligands but is not governed by Boltzmann statistics. Model calculations based on the Separate Statistical Ensemble (SSE) theory show the right behavior but do not provide quantitative agreement with our experimental data. For the two photon dissociation of FE(CO)_5

  11. Three-dimensional nanoscale molecular imaging by extreme ultraviolet laser ablation mass spectrometry

    NASA Astrophysics Data System (ADS)

    Kuznetsov, Ilya; Filevich, Jorge; Dong, Feng; Woolston, Mark; Chao, Weilun; Anderson, Erik H.; Bernstein, Elliot R.; Crick, Dean C.; Rocca, Jorge J.; Menoni, Carmen S.

    2015-04-01

    Analytical probes capable of mapping molecular composition at the nanoscale are of critical importance to materials research, biology and medicine. Mass spectral imaging makes it possible to visualize the spatial organization of multiple molecular components at a sample's surface. However, it is challenging for mass spectral imaging to map molecular composition in three dimensions (3D) with submicron resolution. Here we describe a mass spectral imaging method that exploits the high 3D localization of absorbed extreme ultraviolet laser light and its fundamentally distinct interaction with matter to determine molecular composition from a volume as small as 50 zl in a single laser shot. Molecular imaging with a lateral resolution of 75 nm and a depth resolution of 20 nm is demonstrated. These results open opportunities to visualize chemical composition and chemical changes in 3D at the nanoscale.

  12. Three-dimensional nanoscale molecular imaging by extreme ultraviolet laser ablation mass spectrometry

    PubMed Central

    Kuznetsov, Ilya; Filevich, Jorge; Dong, Feng; Woolston, Mark; Chao, Weilun; Anderson, Erik H.; Bernstein, Elliot R.; Crick, Dean C.; Rocca, Jorge J.; Menoni, Carmen S.

    2015-01-01

    Analytical probes capable of mapping molecular composition at the nanoscale are of critical importance to materials research, biology and medicine. Mass spectral imaging makes it possible to visualize the spatial organization of multiple molecular components at a sample's surface. However, it is challenging for mass spectral imaging to map molecular composition in three dimensions (3D) with submicron resolution. Here we describe a mass spectral imaging method that exploits the high 3D localization of absorbed extreme ultraviolet laser light and its fundamentally distinct interaction with matter to determine molecular composition from a volume as small as 50 zl in a single laser shot. Molecular imaging with a lateral resolution of 75 nm and a depth resolution of 20 nm is demonstrated. These results open opportunities to visualize chemical composition and chemical changes in 3D at the nanoscale. PMID:25903827

  13. Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim; Engel-Herbert, Roman

    2016-07-01

    The synthesis of a 50 unit cell thick n = 4 Srn+1TinO3n+1 (Sr5Ti4O13) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO2 layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO2 layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO3 perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.

  14. On the Growth of Complex Oxides by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Fong, Dillon

    Functional materials based on complex oxides in thin film form offer new and exciting strategies for meeting many of our outstanding energy challenges through systematic control of layer sequencing, strain, etc. However, the synthesis of such oxide films can be a major challenge even when utilizing reactive molecular-beam epitaxy (MBE), a powerful deposition technique that allows the construction of materials atomic plane by atomic plane. To understand the fundamental physics of oxide growth by reactive MBE, we present in situ surface x-ray diffraction results on the growth of SrTiO3 and SrO-SrTiO3 thin films on (001)-oriented SrTiO3 substrates. For homoepitaxy, we compare sequential deposition (alternating Sr and Ti monolayer doses) with that of co-deposition of Sr and Ti, both in a background of oxygen pressure, and observe drastically different growth pathways due to the presence of a TiO2 double layer. For heteroepitaxial growth of Ruddlesden-Popper SrO-SrTiO3 films, we find that layers rearrange dynamically, resulting in layer sequences distinct from the shutter sequence. In general, the starting surface structure and composition, in combination with local thermodynamic considerations, strongly influence our ability to atomically construct new complex oxides.

  15. Multiple target laser ablation system

    DOEpatents

    Mashburn, Douglas N.

    1996-01-01

    A laser ablation apparatus and method are provided in which multiple targets consisting of material to be ablated are mounted on a movable support. The material transfer rate is determined for each target material, and these rates are stored in a controller. A position detector determines which target material is in a position to be ablated, and then the controller controls the beam trigger timing and energy level to achieve a desired proportion of each constituent material in the resulting film.

  16. Multiple target laser ablation system

    DOEpatents

    Mashburn, D.N.

    1996-01-09

    A laser ablation apparatus and method are provided in which multiple targets consisting of material to be ablated are mounted on a movable support. The material transfer rate is determined for each target material, and these rates are stored in a controller. A position detector determines which target material is in a position to be ablated, and then the controller controls the beam trigger timing and energy level to achieve a desired proportion of each constituent material in the resulting film. 3 figs.

  17. Non-ablative radio-frequency rejuvenation: a histological and bio-molecular report.

    PubMed

    Avantaggiato, A; Andreasi Bassi, M; Cura, F; Pascali, M; Carinci, F

    2016-01-01

    Radiofrequency machines for medical use are known to produce moderate clinical improvement of skin laxity without invasive procedures. Numerous equipment with different characteristics have been proposed after the introduction in 2002 of the first FDA approved device. This report is aimed to test if RF treatment is effective when performed at low frequency and low energy level. Two RF treatments were performed unilaterally 7 and 2 days before a planned eyebrow lifting surgery, with a radiofrequency device with 0.52 to 0.7 MHz frequencies, maximum energy of 200 W, used at 40% of its power. A bipolar handpiece with a diameter of 30 mm and a maximum power of 9-9.5 W was massaged along the temporal area for 10 min. Skin samples of treated and untreated sides were collected during surgery and processed for histologic examination and RT-PCR analysis, to test differences in gene activation in a panel of proteins that are relevant in extracellular matrix of dermal connective tissue. The histological examination of the samples showed that the treatment induced a loss of the typical oriented structure in the reticular dermis. The study through RT-PCR evidenced that ELN, the gene codifying for Elastine was strongly enhanced. Some collagen-tested genes (COL1A1, COL3A1 and COL9A1) were inhibited by the treatment, whereas COL2A1 and COL11 were activated. The genes responsible for Metallo-proteases (MMP) 2, 3 and 13 were depressed, while the MMP9 was stimulated. Gene codifying for Hyaluronic synthase 1 (HAS1), Hyluronidase 1 (HYAL1), Neutrophyl elastase (Elane), Desmoplakin (DSP) and GDF6 were inhibited. Insulin like growth factor (IGF1) gene activity was enhanced. RF treatment, with the tested non-ablative equipment, produced histological effects and change in DNA expression of some extracellular matrix related genes, confirming the biostimulatory role of this procedure. PMID:27469572

  18. Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Bollinger, A. T.; Wu, J.; Božović, I.

    2016-05-01

    The molecular beam epitaxy (MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

  19. Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

    DOE PAGES

    A. T. Bollinger; Wu, J.; Bozovic, I.

    2016-03-15

    In this study, the molecular beam epitaxy(MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

  20. Metallic impurities in gallium nitride grown by molecular beam epitaxy

    SciTech Connect

    McHugo, S.A.; Krueger, J.; Kisielowski, C.

    1997-04-01

    Transition metals are often encountered in trace amounts in semiconductors. They have been extensively studied in most elemental and compound systems, since they form deep donor and/or acceptor levels which usually degrade the electronic and optical material properties. Only very little is known about transition metals in recent III-V semiconducting materials, such as GaN, AlN and InN. These few studies have been done exclusively on Metal-Organic Chemical Vapor Deposition (MOCVD) or Hybrid Vapor Phase Epitaxy HVPE-grown GaN. Preliminary x-ray fluorescence studies at the Advanced Light Source, beamline 10.3.1, Lawrence Berkeley National Laboratory have revealed that GaN materials grown by Molecular Beam Epitaxy (MBE) have Fe, Ni and Cr as the dominant transition metal contaminants. This finding is commensurate with the extremely high concentrations of hydrogen, carbon and oxygen (up to 10{sup 20} cm{sup {minus}3}) measured by Secondary Ion Mass Spectroscopy (SIMS). Preliminary work using the mapping capabilities of the x-ray fluorescence microprobe revealed the metal impurities were inhomogeneously distributed over the film. Future work of this collaboration will be to find a correlation between the existence of transition metals in MBE films, as revealed by x-ray fluorescence, and Photoluminescence (PL) spectra taken in the infrared region. Also, the authors will make use of the 1 {mu}m spatial resolution of x-ray microprobe to locate the contaminants in relation to structural defects in the GaN films. Because of the large strain caused by the lattice mismatch between the GaN films and the substrates, the films grow in a columnar order with high densities of grain boundaries and dislocations. These structural defects offer preferential sites for metal precipitation or agglomeration which could degrade the optical properties of this material more so than if the impurities were left dissolved in the GaN.

  1. Compression and ablation of the photo-irradiated molecular cloud the Orion Bar

    NASA Astrophysics Data System (ADS)

    Goicoechea, Javier R.; Pety, Jérôme; Cuadrado, Sara; Cernicharo, José; Chapillon, Edwige; Fuente, Asunción; Gerin, Maryvonne; Joblin, Christine; Marcelino, Nuria; Pilleri, Paolo

    2016-09-01

    The Orion Bar is the archetypal edge-on molecular cloud surface illuminated by strong ultraviolet radiation from nearby massive stars. Our relative closeness to the Orion nebula (about 1,350 light years away from Earth) means that we can study the effects of stellar feedback on the parental cloud in detail. Visible-light observations of the Orion Bar show that the transition between the hot ionized gas and the warm neutral atomic gas (the ionization front) is spatially well separated from the transition between atomic and molecular gas (the dissociation front), by about 15 arcseconds or 6,200 astronomical units (one astronomical unit is the Earth-Sun distance). Static equilibrium models used to interpret previous far-infrared and radio observations of the neutral gas in the Orion Bar (typically at 10-20 arcsecond resolution) predict an inhomogeneous cloud structure comprised of dense clumps embedded in a lower-density extended gas component. Here we report one-arcsecond-resolution millimetre-wave images that allow us to resolve the molecular cloud surface. In contrast to stationary model predictions, there is no appreciable offset between the peak of the H2 vibrational emission (delineating the H/H2 transition) and the edge of the observed CO and HCO+ emission. This implies that the H/H2 and C+/C/CO transition zones are very close. We find a fragmented ridge of high-density substructures, photoablative gas flows and instabilities at the molecular cloud surface. The results suggest that the cloud edge has been compressed by a high-pressure wave that is moving into the molecular cloud, demonstrating that dynamical and non-equilibrium effects are important for the cloud evolution.

  2. Compression and ablation of the photo-irradiated molecular cloud the Orion Bar

    NASA Astrophysics Data System (ADS)

    Goicoechea, Javier R.; Pety, Jérôme; Cuadrado, Sara; Cernicharo, José; Chapillon, Edwige; Fuente, Asunción; Gerin, Maryvonne; Joblin, Christine; Marcelino, Nuria; Pilleri, Paolo

    2016-09-01

    The Orion Bar is the archetypal edge-on molecular cloud surface illuminated by strong ultraviolet radiation from nearby massive stars. Our relative closeness to the Orion nebula (about 1,350 light years away from Earth) means that we can study the effects of stellar feedback on the parental cloud in detail. Visible-light observations of the Orion Bar show that the transition between the hot ionized gas and the warm neutral atomic gas (the ionization front) is spatially well separated from the transition between atomic and molecular gas (the dissociation front), by about 15 arcseconds or 6,200 astronomical units (one astronomical unit is the Earth–Sun distance). Static equilibrium models used to interpret previous far-infrared and radio observations of the neutral gas in the Orion Bar (typically at 10–20 arcsecond resolution) predict an inhomogeneous cloud structure comprised of dense clumps embedded in a lower-density extended gas component. Here we report one-arcsecond-resolution millimetre-wave images that allow us to resolve the molecular cloud surface. In contrast to stationary model predictions, there is no appreciable offset between the peak of the H2 vibrational emission (delineating the H/H2 transition) and the edge of the observed CO and HCO+ emission. This implies that the H/H2 and C+/C/CO transition zones are very close. We find a fragmented ridge of high-density substructures, photoablative gas flows and instabilities at the molecular cloud surface. The results suggest that the cloud edge has been compressed by a high-pressure wave that is moving into the molecular cloud, demonstrating that dynamical and non-equilibrium effects are important for the cloud evolution.

  3. Measurement of the density profile of pure and seeded molecular beams by femtosecond ion imaging

    SciTech Connect

    Meng, Congsen; Janssen, Maurice H. M.

    2015-02-15

    Here, we report on femtosecond ion imaging experiments to measure the density profile of a pulsed supersonic molecular beam. Ion images are measured for both a molecular beam and bulk gas under identical experimental conditions via femtosecond multiphoton ionization of Xe atoms. We report the density profile of the molecular beam, and the measured absolute density is compared with theoretical calculations of the centre line beam density. Subsequently, we discuss reasons accounting for the differences between measurements and calculations and propose that strong skimmer interference is the most probable cause for the differences. Furthermore, we report on experiments measuring the centre line density of seeded supersonic beams. The femtosecond ion images show that seeding the heavy Xe atom at low relative seed fractions (1%-10%) in a light carrier gas like Ne results in strong relative enhancements of up to two orders of magnitude.

  4. Internal Energy Dependence of Molecular Condensation Coefficients Determined from Molecular Beam Surface Scattering Experiments

    DOE R&D Accomplishments Database

    Sibener, S. J.; Lee, Y. T.

    1978-05-01

    An experiment was performed which confirms the existence of an internal mode dependence of molecular sticking probabilities for collisions of molecules with a cold surface. The scattering of a velocity selected effusive beam of CCl{sub 4} from a 90 K CC1{sub 4} ice surface has been studied at five translational velocities and for two different internal temperatures. At a surface temperature of 90 K (approx. 99% sticking probability) a four fold increase in reflected intensity was observed for the internally excited (560 K) CC1{sub 4} relative to the room temperature (298 K) CC1{sub 4} at a translational velocity of 2.5 X 10{sup 4} cm/sec. For a surface temperature of 90 K all angular distributions were found to peak 15{sup 0} superspecularly independent of incident velocity.

  5. Fabrication of precision high quality facets on molecular beam epitaxy material

    DOEpatents

    Petersen, Holly E.; Goward, William D.; Dijaili, Sol P.

    2001-01-01

    Fabricating mirrored vertical surfaces on semiconductor layered material grown by molecular beam epitaxy (MBE). Low energy chemically assisted ion beam etching (CAIBE) is employed to prepare mirrored vertical surfaces on MBE-grown III-V materials under unusually low concentrations of oxygen in evacuated etching atmospheres of chlorine and xenon ion beams. UV-stabilized smooth-surfaced photoresist materials contribute to highly vertical, high quality mirrored surfaces during the etching.

  6. Reactions of carbon atoms in pulsed molecular beams

    SciTech Connect

    Reisler, H.

    1993-12-01

    This research program consists of a broad scope of experiments designed to unravel the chemistry of atomic carbon in its two spin states, P and D, by using well-controlled initial conditions and state-resolved detection of products. Prerequisite to the proposed studies (and the reason why so little is known about carbon atom reactions), is the development of clean sources of carbon atoms. Therefore, in parallel with the studies of its chemistry and reaction dynamics, the authors continuously explore new, state-specific and efficient ways of producing atomic carbon. In the current program, C({sup 3}P) is produced via laser ablation of graphite, and three areas of study are being pursued: (i) exothermic reactions with small inorganic molecules (e.g., O{sub 2}, N{sub 2}O, NO{sub 2}) that can proceed via multiple pathways; (ii) the influence of vibrational and translational energy on endothermic reactions involving H-containing reactants that yield CH products (e.g., H{sub 2}O H{sub 2}CO); (iii) reactions of C({sup 3}P) with free radicals (e.g., HCO, CH{sub 3}O). In addition, the authors plan to develop a source of C({sup 1}D) atoms by exploiting the pyrolysis of diazotetrazole and its salts in the ablation source. Another important goal involves collaboration with theoreticians in order to obtain relevant potential energy surfaces, rationalize the experimental results and predict the roles of translational and vibrational energies.

  7. Molecular beam deposition of high quality silicon oxide dielectric films

    NASA Astrophysics Data System (ADS)

    Chand, Naresh; Johnson, J. E.; Osenbach, J. W.; Liang, W. C.; Feldman, L. C.; Tsang, W. T.; Krautter, H. W.; Passlack, M.; Hull, R.; Swaminathan, V.

    1995-03-01

    We report a method for depositing clean, uniform and stable SiO x dielectric films with high control and reproducibility. The technique uses a molecular or chemical beam epitaxy system (MBE or CBE). The technique offers many advantages over the conventional methods such as load lock facility, accurate determination of the flux, low background contamination, in-situ process monitoring tools, and heating, rotation and tilting of the substrate. Rutherford backscattering (RBS) shows that the films deposited without oxygen are stoichiometric, 50% oxygen and 50% Si, irrespective of the deposition rate or temperature. Such SiO films have a resistivity of ≥10 13 Ω · cm and a nominal refractive index of 2 at 632.8 nm. The refractive index can be reduced by introducing a controlled amount of oxygen into the chamber to result in SiO x ( x = 1-2) films. The SiO films have uniform density and composition, and are free from voids, or any inclusions of different crystalline or amorphous phases. These SiO films are easy to pattern and their erosion rate is slower than that of SiO 2 deposited by plasma enhanced chemical vapor deposition (PECVD). During 192 h soak in 99°C deionized (DI) water, no moisture absorption was observed in SiO films deposited at a rate of 2 Å/s. Even in films deposited at 11 Å/s, the moisture content after 192 h soak in 99°C DI water was about one third the moisture content of an as-deposited typical PECVD SiO 2 film, indicating that the SiO films are highly resistant to moisture absorption and the film quality improves with reducing deposition rate. The insulating, mechanical and optical properties of SiO x films make them suitable for many applications such as surface passivation, mask for processing and facet coating of lasers. The process can be easily integrated with MBE/CBE which would greatly simplify and improve the III-V semiconductor processing. It may also be possible to deposit such dielectric films by CBE using gaseous compound sources.

  8. Crossed molecular beam studies of atmospheric chemical reaction dynamics

    SciTech Connect

    Zhang, Jingsong

    1993-04-01

    The dynamics of several elementary chemical reactions that are important in atmospheric chemistry are investigated. The reactive scattering of ground state chlorine or bromine atoms with ozone molecules and ground state chlorine atoms with nitrogen dioxide molecules is studied using a crossed molecular beams apparatus with a rotatable mass spectrometer detector. The Cl + O{sub 3} {yields} ClO + O{sub 2} reaction has been studied at four collision energies ranging from 6 kcal/mole to 32 kcal/mole. The derived product center-of-mass angular and translational energy distributions show that the reaction has a direct reaction mechanism and that there is a strong repulsion on the exit channel. The ClO product is sideways and forward scattered with respect to the Cl atom, and the translational energy release is large. The Cl atom is most likely to attack the terminal oxygen atom of the ozone molecule. The Br + O{sub 3} {yields} ClO + O{sub 2} reaction has been studied at five collision energies ranging from 5 kcal/mole to 26 kcal/mole. The derived product center-of-mass angular and translational energy distributions are quite similar to those in the Cl + O{sub 3} reaction. The Br + O{sub 3} reaction has a direct reaction mechanism similar to that of the Cl + O{sub 3} reaction. The electronic structure of the ozone molecule seems to play the central role in determining the reaction mechanism in atomic radical reactions with the ozone molecule. The Cl + NO{sub 2} {yields} ClO + NO reaction has been studied at three collision energies ranging from 10.6 kcal/mole to 22.4 kcal/mole. The center-of-mass angular distribution has some forward-backward symmetry, and the product translational energy release is quite large. The reaction proceeds through a short-lived complex whose lifetime is less than one rotational period. The experimental results seem to show that the Cl atom mainly attacks the oxygen atom instead of the nitrogen atom of the NO{sub 2} molecule.

  9. Molecular Beam Epitaxial Growth of Cuprate Superconductors and Related Phases

    NASA Astrophysics Data System (ADS)

    Schlom, Darrell Galen

    The discovery of a class of new layered crystalline materials which exhibit superconductivity at unprecedented temperatures has opened new possibilities for the future of electronic devices and for molecular beam epitaxy (MBE) as a potential method to grow device structures containing these materials. The low growth temperature and atomic layering capability that MBE has demonstrated for the growth of semiconductors suggests that the MBE growth of non-equilibrium layered structures and metastable phases within oxide systems encompassing the high transition temperature (T _{rm c}) superconductors might be possible. If available, such a growth technique would be useful not only for device fabrication, but would offer an unparalleled technique to fabricate metastable superlattice mixtures to test high T_{ rm c} theories, which might then allow the growth of even higher temperature superconducting compounds. In contrast to the simplicity of the materials systems to which MBE has been successfully applied, the growth of fully oxidized, multi-element compounds by MBE involves significant challenges. This thesis describes research to develop in situ growth techniques allowing the growth of layered superconducting cuprates and related phases by MBE, and characterization of grown films. The conditions necessary to achieve this in situ ability, including the use of highly oxidizing species in order to maintain a long mean free path necessary for MBE, appropriate substrate temperature, precise composition control, and suitable substrates are discussed. The MBE apparatus used and design improvements made during the course of this research are described. The experimental results of films grown in the Dy-Ba-Cu-O and Bi-Sr-Ca-Cu-O systems demonstrate the ability of this shuttered, layer-by-layer MBE technique to grow smooth, layered, metastable compounds, including ordered superlattices, in situ using ozone. Both cross -sectional TEM images and a comparison of the observed x -ray

  10. Molecular beam facility for studying mass spectrometer performance

    NASA Technical Reports Server (NTRS)

    Ballenthin, J. O.; Nier, A. O.

    1981-01-01

    An apparatus which produces neutral gas beams in the velocity range from thermal to 6 km/s makes possible studies simulating the motion of instruments through tenuous atmospheres. Use of the apparatus in studying the response of an open-source mass spectrometer is examined. Experiments performed include responses when the instrument is in a normal mode of operation, when the ion source potentials are adjusted to reject striking gas particles, when the beam is restricted so that portions of the ion source are struck, and when the beam strikes at angles other than normal incidence. Results indicate specular radiation of particles out of the source and stagnation ratios close to unity for normal operation. Retarding potential studies dropped the sensitivity by a factor of about 10, and as angles of attack are varied, the effect was found to depend upon beam velocity and the way the ions are initially accelerated.

  11. Tumor Ablation and Nanotechnology

    PubMed Central

    Manthe, Rachel L.; Foy, Susan P.; Krishnamurthy, Nishanth; Sharma, Blanka; Labhasetwar, Vinod

    2010-01-01

    Next to surgical resection, tumor ablation is a commonly used intervention in the treatment of solid tumors. Tumor ablation methods include thermal therapies, photodynamic therapy, and reactive oxygen species (ROS) producing agents. Thermal therapies induce tumor cell death via thermal energy and include radiofrequency, microwave, high intensity focused ultrasound, and cryoablation. Photodynamic therapy and ROS producing agents cause increased oxidative stress in tumor cells leading to apoptosis. While these therapies are safe and viable alternatives when resection of malignancies is not feasible, they do have associated limitations that prevent their widespread use in clinical applications. To improve the efficacy of these treatments, nanoparticles are being studied in combination with nonsurgical ablation regimens. In addition to better thermal effect on tumor ablation, nanoparticles can deliver anticancer therapeutics that show synergistic anti-tumor effect in the presence of heat and can also be imaged to achieve precision in therapy. Understanding the molecular mechanism of nanoparticle-mediated tumor ablation could further help engineer nanoparticles of appropriate composition and properties to synergize the ablation effect. This review aims to explore the various types of nonsurgical tumor ablation methods currently used in cancer treatment and potential improvements by nanotechnology applications. PMID:20866097

  12. Laser-induced Bessel beams can realize fast all-optical switching in gold nanosol prepared by pulsed laser ablation

    SciTech Connect

    Joseph, Santhi Ani; Hari, Misha; Nampoori, V. P. N.; Sharma, Gaurav; Mathew, S.; Radhakrishnan, P.

    2010-03-15

    We demonstrate the possibility of realizing, all-optical switching in gold nanosol. Two overlapping laser beams are used for this purpose, due to which a low-power beam passing collinear to a high-power beam will undergo cross phase modulation and thereby distort the spatial profile. This is taken to advantage for performing logic operations. We have also measured the threshold pump power to obtain a NOT gate and the minimum response time of the device. Contrary to the general notion that the response time of thermal effects used in this application is of the order of milliseconds, we prove that short pump pulses can result in fast switching. Different combinations of beam splitters and combiners will lead to the formation of other logic functions too.

  13. Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Hirama, Kazuyuki; Taniyasu, Yoshitaka; Karimoto, Shin-ichi; Krockenberger, Yoshiharu; Yamamoto, Hideki

    2014-03-01

    We investigated the formation of cubic boron nitride (c-BN) thin films on diamond (001) and (111) substrates by ion-beam-assisted molecular beam epitaxy (MBE). The metastable c-BN (sp3-bonded BN) phase can be epitaxially grown as a result of the interplay between competitive phase formation and selective etching. We show that a proper adjustment of acceleration voltage for N2+ and Ar+ ions is a key to selectively discriminate non-sp3 BN phases. At low acceleration voltage values, the sp2-bonded BN is dominantly formed, while at high acceleration voltages, etching dominates irrespective of the bonding characteristics of BN.

  14. Superconductivity in oxygen doped iron telluride by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Zheng, Mao

    Iron base superconductor have gained much attention in the research community. They offer great potentials to improve our understanding of the subject of superconductivity by having another family of high temperature superconductors to compare and contrast to the cuprates. Practically, the iron based superconductors seems to be even better candidates for applications in power generation and power transmission. Iron telluride is regarded as the parent compound of the "11" family, the family of iron chalcogenide that has the simplest structure. Iron telluride itself is not a superconductor, by can become one when doped with oxygen. In this investigation, we developed the growth recipe of thin film iron telluride by Molecular Beam Epitaxy (MBE). We found the growth to be self-regulated, similar to that of GaAs. The initial layers of growth seem to experience a spontaneous crystallization, as the film quickly go from the initial polycrystalline phase to highly crystalline in just a few unit cells. We studied oxygen doping to the iron telluride thin films and the resultant superconductivity. We characterized the sample with AFM, XRD, transport, and STEM-EELS, and we found that interfacial strain is not an essential ingredient of superconductivity in this particular case. We investigated the doping conditions for two candidate oxygen doping modes: substitution and interstitial. We found that substitution occurs when the film grown in oxygen, while interstitial oxygen is primarily incorporated during annealing after growth. The substitutional oxygen are concentrated in small local regions where substitution is around 100%, but does not contribute to superconductivity. We estimated substitutional oxygen to be about 5%, and is the proximate cause of superconductivity. Hall experiment on our sample showed a shift of dominant carrier type from holes to electrons around 35 K, but the transition was set in motion as early as the structural phase transition around 70 K. We

  15. Laser ablation of concrete.

    SciTech Connect

    Savina, M.

    1998-10-05

    Laser ablation is effective both as an analytical tool and as a means of removing surface coatings. The elemental composition of surfaces can be determined by either mass spectrometry or atomic emission spectroscopy of the atomized effluent. Paint can be removed from aircraft without damage to the underlying aluminum substrate, and environmentally damaged buildings and sculptures can be restored by ablating away deposited grime. A recent application of laser ablation is the removal of radioactive contaminants from the surface and near-surface regions of concrete. We present the results of ablation tests on concrete samples using a high power pulsed Nd:YAG laser with fiber optic beam delivery. The laser-surface interaction was studied on various model systems consisting of Type I Portland cement with varying amounts of either fine silica or sand in an effort to understand the effect of substrate composition on ablation rates and mechanisms. A sample of non-contaminated concrete from a nuclear power plant was also studied. In addition, cement and concrete samples were doped with non-radioactive isotopes of elements representative of cooling waterspills, such as cesium and strontium, and analyzed by laser-resorption mass spectrometry to determine the contamination pathways. These samples were also ablated at high power to determine the efficiency with which surface contaminants are removed and captured. The results show that the neat cement matrix melts and vaporizes when little or no sand or aggregate is present. Surface flows of liquid material are readily apparent on the ablated surface and the captured aerosol takes the form of glassy beads up to a few tens of microns in diameter. The presence of sand and aggregate particles causes the material to disaggregate on ablation, with intact particles on the millimeter size scale leaving the surface. Laser resorption mass spectrometric analysis showed that cesium and potassium have similar chemical environments in the

  16. Measuring Incorporation Of Arsenic In Molecular-Beam Expitaxy

    NASA Technical Reports Server (NTRS)

    Lewis, Blair F.; Fernandez, Rouel F.; Madhukar, Anupam; Grunthaner, Frank J.

    1988-01-01

    Changes in surface layers cause oscillations in RHEED measurements. Specular RHEED Beam intensity measured before, during, and after deposition of seven to eight monomolecular layers of gallium during 1.5 seconds. Arsenic pressure was 1.7x10 to the negative seventh power torr (2.3x10 to the negative fifth power Pa) throughout measurements.

  17. Measurement and Analysis of Rotational Energy of Nitrogen Molecular Beam by REMPI

    SciTech Connect

    Mori, H.; Yamaguchi, H.; Kataoka, K.; Sugiyama, N.; Ide, K.; Niimi, T.

    2008-12-31

    Molecular beams are powerful tools for diagnoses of solid surfaces and gas-surface interaction tests. Unfortunately, there are very few reports about experimental analysis of internal energy distribution (e.g. rotational energy) of molecular beams of diatomic or polyatomic molecules, because measurement of internal energy distribution is very difficult. Spectroscopic measurement techniques based on resonantly enhanced multiphoton ionization (REMPI) is very powerful for measurement in highly rarefied gas flows. In this study, the REMPI method is applied to measurement of rotational energy distribution of nitrogen molecular beams. The REMPI spectrum of the molecular beam indicates the rotational temperature higher than the translational temperature of 7.2 K estimated by assuming isentropic flows. The O and P branches of the REMPI spectrum correspond to the rotational temperature of 30 K, but the S branch of the spectrum deviates from that at 30 K. It seems to be because the non-equilibrium rotational energy distribution of the molecular beam deviates from the Boltzmann distribution.

  18. Formation of diatomic molecular radicals in reactive nitrogen-carbon plasma generated by electron cyclotron resonance discharge and pulsed laser ablation

    SciTech Connect

    Liang, Peipei; Li, Yanli; You, Qinghu; Cai, Hua; Yang, Xu; Sun, Jian; Xu, Ning; Wu, Jiada

    2014-04-15

    The reactive nitrogen-carbon plasma generated by electron cyclotron resonance (ECR) microwave discharge of N{sub 2} gas and pulsed laser ablation of a graphite target was characterized spectroscopically by time-integrated and time-resolved optical emission spectroscopy with space resolution for a study of gas-phase reactions and molecular radical formation in the plasma. The plasma exhibits very high reactivity compared with the plasma generated solely by ECR discharge or by pulsed laser ablation and contains highly excited species originally present in the ambient gaseous environment and directly ablated from the target as well as formed as the products of gas-phase reactions occurring in the plasma. The space distribution and the time evolution of the plasma emission give an access to the gas-phase reactions for the formation of C{sub 2} and CN radicals, revealing that C{sub 2} radicals are formed mainly in the region near the target while CN radicals can be formed in a much larger region not only in the vicinity of the target, but especially in the region near a substrate far away from the target.

  19. Plasma behaviour with hydrogen supersonic molecular beam and cluster jet injection in the HL-2A tokamak

    NASA Astrophysics Data System (ADS)

    Yao, Lianghua; Feng, Beibing; Chen, Chengyuan; Shi, Zhongbin; Yuan, Baoshan; Zhou, Yan; Duan, Xuru; Sun, Hongjuan; Lu, Jie; Jiao, Yiming; Ni, Guoquan; Lu, Haiyang; Xiao, Weiwen; Li, Wei; Pan, Yudong; Hong, Wenyu; Ran, Hong; Ding, Xuantong; Liu, Yong

    2007-11-01

    The experimental results of low pressure supersonic molecular beam injection (SMBI) fuelling on the HL-2A closed divertor indicate that during the period of pulsed SMBI the power density convected at the target plate surfaces was 0.4 times of that before or after the beam injection. An empirical scaling law used for the SMBI penetration depth for the HL-2A plasma was obtained. The cluster jet injection (CJI) is a new fuelling method which is based on and developed from the experiments of SMBI in the HL-1M tokamak. The hydrogen clusters are produced at liquid nitrogen temperature in a supersonic adiabatic expansion of moderate backing pressure gases into vacuum through a Laval nozzle and are measured by Rayleigh scattering. The measurement results have shown that the averaged cluster size of as large as hundreds of atoms was found at the backing pressures of more than 0.1 MPa. Multifold diagnostics gave coincidental evidence that when there was hydrogen CJI in the HL-2A plasma, a great deal of particles from the jet were deposited at a terminal area rather than uniformly ablated along the injecting path. SMB with clusters, which are like micro-pellets, will be of benefit for deeper fuelling, and its injection behaviour was somewhat similar to that of pellet injection. Both the particle penetration depth and the fuelling efficiency of the CJI were distinctly better than that of the normal SMBI under similar discharge operation. During hydrogen CJI or high-pressure SMBI, a combination of collision and radiative stopping forced the runaway electrons to cool down to thermal velocity due to such a massive fuelling.

  20. Quantum state specific reactant preparation in a molecular beam by rapid adiabatic passage.

    PubMed

    Chadwick, Helen; Hundt, P Morten; van Reijzen, Maarten E; Yoder, Bruce L; Beck, Rainer D

    2014-01-21

    Highly efficient preparation of molecules in a specific rovibrationally excited state for gas/surface reactivity measurements is achieved in a molecular beam using tunable infrared (IR) radiation from a single mode continuous wave optical parametric oscillator (cw-OPO). We demonstrate that with appropriate focusing of the IR radiation, molecules in the molecular beam crossing the fixed frequency IR field experience a Doppler tuning that can be adjusted to achieve complete population inversion of a two-level system by rapid adiabatic passage (RAP). A room temperature pyroelectric detector is used to monitor the excited fraction in the molecular beam and the population inversion is detected and quantified using IR bleaching by a second IR-OPO. The second OPO is also used for complete population transfer to an overtone or combination vibration via double resonance excitation using two spatially separated RAP processes.

  1. Quantum state specific reactant preparation in a molecular beam by rapid adiabatic passage.

    PubMed

    Chadwick, Helen; Hundt, P Morten; van Reijzen, Maarten E; Yoder, Bruce L; Beck, Rainer D

    2014-01-21

    Highly efficient preparation of molecules in a specific rovibrationally excited state for gas/surface reactivity measurements is achieved in a molecular beam using tunable infrared (IR) radiation from a single mode continuous wave optical parametric oscillator (cw-OPO). We demonstrate that with appropriate focusing of the IR radiation, molecules in the molecular beam crossing the fixed frequency IR field experience a Doppler tuning that can be adjusted to achieve complete population inversion of a two-level system by rapid adiabatic passage (RAP). A room temperature pyroelectric detector is used to monitor the excited fraction in the molecular beam and the population inversion is detected and quantified using IR bleaching by a second IR-OPO. The second OPO is also used for complete population transfer to an overtone or combination vibration via double resonance excitation using two spatially separated RAP processes. PMID:25669393

  2. Quantum state specific reactant preparation in a molecular beam by rapid adiabatic passage

    SciTech Connect

    Chadwick, Helen Hundt, P. Morten; Reijzen, Maarten E. van; Yoder, Bruce L.; Beck, Rainer D.

    2014-01-21

    Highly efficient preparation of molecules in a specific rovibrationally excited state for gas/surface reactivity measurements is achieved in a molecular beam using tunable infrared (IR) radiation from a single mode continuous wave optical parametric oscillator (cw-OPO). We demonstrate that with appropriate focusing of the IR radiation, molecules in the molecular beam crossing the fixed frequency IR field experience a Doppler tuning that can be adjusted to achieve complete population inversion of a two-level system by rapid adiabatic passage (RAP). A room temperature pyroelectric detector is used to monitor the excited fraction in the molecular beam and the population inversion is detected and quantified using IR bleaching by a second IR-OPO. The second OPO is also used for complete population transfer to an overtone or combination vibration via double resonance excitation using two spatially separated RAP processes.

  3. Quantum state specific reactant preparation in a molecular beam by rapid adiabatic passage

    NASA Astrophysics Data System (ADS)

    Chadwick, Helen; Hundt, P. Morten; van Reijzen, Maarten E.; Yoder, Bruce L.; Beck, Rainer D.

    2014-01-01

    Highly efficient preparation of molecules in a specific rovibrationally excited state for gas/surface reactivity measurements is achieved in a molecular beam using tunable infrared (IR) radiation from a single mode continuous wave optical parametric oscillator (cw-OPO). We demonstrate that with appropriate focusing of the IR radiation, molecules in the molecular beam crossing the fixed frequency IR field experience a Doppler tuning that can be adjusted to achieve complete population inversion of a two-level system by rapid adiabatic passage (RAP). A room temperature pyroelectric detector is used to monitor the excited fraction in the molecular beam and the population inversion is detected and quantified using IR bleaching by a second IR-OPO. The second OPO is also used for complete population transfer to an overtone or combination vibration via double resonance excitation using two spatially separated RAP processes.

  4. Molecular analysis of the androgen receptor in ten prostate cancer specimens obtained before and after androgen ablation.

    PubMed

    Lamb, Dolores J; Puxeddu, Efisio; Malik, Nusrat; Stenoien, David L; Nigam, Rajni; Saleh, George Y; Mancini, Michael; Weigel, Nancy L; Marcelli, Marco

    2003-01-01

    Hormonal or androgen-ablation (AA) therapy is the predominant form of systemic treatment for metastatic prostate cancer. Although an initial response to AA is observed in 70%-80% of patients with advanced disease, most tumors eventually progress to androgen-independent growth, and only a minority of affected individuals are alive 5 years following initiation of treatment. Because AA induces a dramatic change in the hormonal milieu of the patient and because these tumors maintain the ability to proliferate, it is possible that this treatment selects a population of cells with mutated androgen receptors (ARs) that sustain growth despite the absence of circulating androgen. To test this hypothesis we investigated the molecular structure of the AR in 10 prostate cancer specimens obtained before and after AA. Tumors (coded A through L) were microdissected to uniquely enrich genomic DNA from cancer cells. Exons 1-8 of the AR were screened by polymerase chain reaction, single-stranded conformational polymorphism, and sequence analysis. A mutation consisting of an expansion of the polyglutamine (poly-Q) repeat from 20 (found in 100% of the sequences of specimens obtained before AA) to 26 (found in 70% of the sequences of specimens obtained after AA) was detected in patient F. The 26 glutamine (Q26) AR readily translocated to the nucleus upon addition of androgen, and did not show significant differences in its ability to bind (3)[H]-dihydrotestosterone compared to its wild-type counterpart. Nevertheless, analysis of transcriptional activity showed that the Q66 AR was transcriptionally 30%-50% less active than the wild-type molecule. Because clones of AR with an expanded poly-Q tract were detected only in the specimen from patient F obtained after AA, we conclude that in specific circumstances, AA treatments can select variant forms of the AR in the prostate of patients affected by prostate cancer. Further experiments are needed to conclusively determine whether the Q26

  5. Effects of high source flow and high pumping speed on gas source molecular beam epitaxy / chemical beam epitaxy

    NASA Astrophysics Data System (ADS)

    McCollum, M. J.; Jackson, S. L.; Szafranek, I.; Stillman, G. E.

    1990-10-01

    We report the growth of GaAs by molecular beam epitaxy (MBE), gas source molecular beam epitaxy (GSMBE), and chemical beam epitaxy (CBE) in an epitaxial III-V reactor which features high pumping speed. The system is comprised of a modified Perkin-Elmer 430P molecular beam epitaxy system and a custom gas source panel from Emcore. The growth chamber is pumped with a 7000 1/s (He) diffusion pump (Varian VHS-10 with Monsanto Santovac 5 oil). The gas source panel includes pressure based flow controllers (MKS 1150) allowing triethylaluminum (TEA), triethylgallium (TEG), and trimethylindium (TMI) to be supplied without the use of hydrogen. All source lines, including arsine and phosphine, are maintained below atmospheric pressure. The high pumping speed allows total system flow rates as high as 100 SCCM and V/III ratios as high as 100. The purity of GaAs grown by MBE in this system increases with pumping speed. GaAs layers grown by GSMBE with arsine flows of 10 and 20 SCCM have electron concentrations of 1 × 10 15 cm -3 (μ 77=48,000 cm 2/V·) and 2 × 10 14 cm -3 (μ 77=78,000 cm 2/V·s) respectively. El ectron concentration varies with hydride injector temperature such that the minimum in electron concentration occurs for less than complete cracking. The effect of V/III ratio and the use of a metal eutectic bubbler on residual carrier concentration in GaAs grown by CBE is presented. Intentional Si and Be doping of CBE grown GaAs is demonstrated at a high growth rate of 5.4 μm/h.

  6. A free jet (supersonic), molecular beam source with automatized, 50 nm precision nozzle-skimmer positioning.

    PubMed

    Eder, S D; Samelin, B; Bracco, G; Ansperger, K; Holst, B

    2013-09-01

    Low energy (thermal) free jet (supersonic) molecular beams are used in a range of applications from surface science and surface deposition to quantum coherence and gas kinetics experiments. A free jet molecular beam is created by a gas expansion from a high pressure reservoir through a small aperture (nozzle). The nozzle typically has a diameter of 2-20 μm. The central part of the beam is selected using a skimmer, typically up to 500 μm in diameter. Recent years have seen the introduction of highly spatially confined beam sources based on micrometer skimmers and micrometer or even sub-micrometer nozzles. Such sources have been applied, for example, in the investigation of superfluidity and in neutral helium microscopy. However, up till now no source design allowing the precise positioning of the micro-skimmer relative to the nozzle has been available. This is an important issue because the relative position of skimmer and nozzle can influence the beam properties considerably. Here we present the design and implementation of a new molecular beam source, which allows an automatized, 50 nm precision positioning of the skimmer relative to the nozzle. The source is liquid nitrogen cooled and the temperature can be controlled between 110 K and 350 K with a temperature fluctuation of less than ±0.1 K over several hours. Beam intensity measurements using a 5 μm nozzle and a skimmer 5 μm in diameter are presented for stagnation pressures po in the range 3-180 bars. A 2D beam profile scan, using a 9.5 μm skimmer and a 5 μm nozzle is presented as a further documentation of the versatility of the new design and as an illustration of the influence of the relative skimmer-nozzle position on the beam properties.

  7. A non-diaphragm type small shock tube for application to a molecular beam source

    NASA Astrophysics Data System (ADS)

    Yoshimoto, Yuta; Osuka, Kenichi; Miyoshi, Nobuya; Kinefuchi, Ikuya; Takagi, Shu; Matsumoto, Yoichiro

    2013-07-01

    A non-diaphragm type small shock tube was developed for application to a molecular beam source, which can generate beams in the energy range from 1 to several electron volts and beams containing dissociated species such as atomic oxygen. Since repetitive high-frequency operation is indispensable for rapid signal acquisition in beam scattering experiments, the dimensions of the shock tube were miniaturized to reduce the evacuation time between shots. The designed shock tube is 2-4 mm in diameter and can operate at 0.5 Hz. Moreover, a high shock Mach number at the tube end is required for high-energy molecular beam generation. To reduce the shock attenuation caused by the wall boundary layer, which becomes significant in small-diameter tubes, we developed a high-speed response valve employing the current-loop mechanism. The response time of this mechanism is about 100 μs, which is shorter than the rupture time of conventional diaphragms. We show that the current-loop valve generates shock waves with shorter formation distances (about 200-300 mm) than those of conventional shock tubes. In addition, the converging geometry efficiently accelerates shock wave in the small-diameter tubes. The optimal geometry of the shock tube yields shock Mach number around 7, which indicates that the translation energy of molecular beams can exceed 1 eV even in the presence of the real gas effect.

  8. High-Energy Molecular Beam Source Using a Non-Diaphragm Type Small Shock Tube

    NASA Astrophysics Data System (ADS)

    Yoshimoto, Yuta; Miyoshi, Nobuya; Kinefuchi, Ikuya; Shimizu, Kazuya; Takagi, Shu; Matsumoto, Yoichiro

    2010-11-01

    The molecular beam technique is one of the powerful tools to analyze gas-surface interactions. In order to generate high-energy molecular beam in a range of 1 - 5 eV, which corresponds to the typical activation energy of surface reactions, we are developing a beam source using a non-diaphragm type shock tube, which can operate at a repetition rate high enough for efficient data acquisition. We made the volume of a tube much smaller than that of conventional ones so that the evacuation time between each shot becomes as short as possible. Our measurement of shock Mach numbers showed that even small diameter (2 or 4 mm) tubes, in which the wall boundary layer has a large influence on the propagation of shock waves, could generate molecular beam with the translational energy of more than 1 eV. This is because the reduction of shock formation distance by rapid opening of the valve, which separates a high pressure room from a low pressure room, weakened the effect of viscous damping on the accelerating shock wave. In addition, the convergent shock tubes of which diameters linearly decrease from 4 to 2 mm exhibited higher Mach numbers than straight ones. This indicates that the application of the convergent tube with the optimized geometry would be promising for generating high-energy molecular beam.

  9. Dosimetric comparison of flattened and unflattened beams for stereotactic ablative radiotherapy of stage I non-small cell lung cancer

    SciTech Connect

    Hrbacek, Jan; Lang, Stephanie; Graydon, Shaun N.; Klöck, Stephan; Riesterer, Oliver

    2014-03-15

    Purpose: To compare contribution and accuracy of delivery for two flattening filter free (FFF) beams of the nominal energy 6 and 10 MV and a 6 MV flattened beam for early stage lung cancer. Methods: For each of 11 patients with stage I nonsmall cell lung cancer three volumetric modulated arc therapy plans were prepared utilizing a 6 MV flattened photon beam (X6FF) and two nonflattened beams of nominal energy 6 and 10 MV (X6FFF, X10FFF). Optimization constraints were set to produce dose distributions that meet the criteria of the RTOG-0915 protocol. The radiation schedule used for plan comparison in all patients was 50 Gy in five fractions. Dosimetric parameters of planning target volume (PTV) and organs-at-risk and delivery times were assessed and compared. All plans were subject to verification using Delta{sup 4} unit (Scandidos, Sweden) and absolutely calibrated gafchromic films in a thorax phantom. Results: All plans had a qualitatively comparable outcome. Obtained dose distributions were conformal (CI < 1.17) and exhibited a steep dose fall-off outside the PTV. The ratio of monitor units for FFF versus FF plans in the authors' study ranged from 0.95 to 1.21 and from 0.93 to 1.25 for X6FFF/X6FF and X10FFF/X6FF comparisons, respectively. The ratio systematically increased with increasing size of the PTV (up to +25% for 150 cm{sup 3} PTV). Yet the integral dose to healthy tissue did not follow this trend. Comparison of cumulative dose volume histograms for a patient's body showed that X6FFF plans exhibit improved conformity and reduced the volume of tissue that received more than 50% of the prescription dose. Parameters related to dose gradient showed statistically significant improvement. CI{sub 50%}, CI{sub 60%}, CI{sub 80%}, and CI{sub 100%} were on average reduced by 4.6% (p < 0.001), 4.6% (p = 0.002), 3.1% (p = 0.002), and 1.2% (p = 0.039), respectively. Gradient measure was on average reduced by 4.2% (p < 0.001). Due to dose reduction in the surrounding lung

  10. Use of molecular beams to support microspheres during plasma coating

    SciTech Connect

    Crane, J.K.; Smith, R.D.; Johnson, W.L.; Letts, S.A.; Korbel, G.R.; Krenick, R.M.

    1980-08-26

    Spherical laser fusion targets can be levitated on beams of Ar or other gas atoms. This is an especially useful and reliable technique for supporting microspheres during plasma coating or plasma etching. The reliability of this technique is principally the result of two things: the success of a special centering device which provides a lateral, stabilizing force on the levitated microspheres; and a gas handling system which is capable of controlling levitation gas flow in the microtorr liter/sec range. We have determined that the operational regime of this device is that of Knudsen's flow. This knowledge of the flow characteristics has been important in developing this device.

  11. Molecular Beam Studies of Hot Atom Chemical Reactions: Reactive Scattering of Energetic Deuterium Atoms

    DOE R&D Accomplishments Database

    Continetti, R. E.; Balko, B. A.; Lee, Y. T.

    1989-02-01

    A brief review of the application of the crossed molecular beams technique to the study of hot atom chemical reactions in the last twenty years is given. Specific emphasis is placed on recent advances in the use of photolytically produced energetic deuterium atoms in the study of the fundamental elementary reactions D + H{sub 2} -> DH + H and the substitution reaction D + C{sub 2}H{sub 2} -> C{sub 2}HD + H. Recent advances in uv laser and pulsed molecular beam techniques have made the detailed study of hydrogen atom reactions under single collision conditions possible.

  12. Dynamics of mid-infrared femtosecond laser resonant ablation

    NASA Astrophysics Data System (ADS)

    Pang, Dongqing; Li, Yunxuan; Wang, Qingyue

    2014-06-01

    Resonant ablation is beneficial to avoiding uncontrollable subsurface damages in the laser ablation of polymers. In this paper the dynamics of mid-infrared laser resonant ablation of polylactic acid and toluene was calculated by using fluid dynamic equations. The merits and drawbacks of mid-infrared femtosecond laser resonant ablation of high molecular weight polymers have been discussed.

  13. Expansion Discharge Source for Ion Beam Laser Spectroscopy of Cold Molecular Ions

    NASA Astrophysics Data System (ADS)

    Porambo, Michael; Pearson, Jessica; Riccardo, Craig; McCall, Benjamin J.

    2013-06-01

    Molecular ions are important in several fields of research, and spectroscopy acts as a key tool in the study of these ions. However, problems such as low ion abundance, ion-neutral confusion, and spectral congestion due to high internal temperatures can hinder effective spectroscopic studies. To circumvent these problems, we are developing a technique called Sensitive, Cooled, Resolved, Ion BEam Spectroscopy (SCRIBES). This ion beam spectrometer will feature a continuous supersonic expansion discharge source to produce cold molecular ions, electrostatic ion optics to focus the ions into an ion beam and bend the beam away from co-produced neutral molecules, an overlap region for cavity enhanced spectroscopy, and a time-of-flight mass spectrometer. When completed, SCRIBES will be an effective tool for the study of large, fluxional, and complex molecular ions that are difficult to study with other means. The ion beam spectrometer has been successfully implemented with a hot ion source. This talk will focus on the work of integrating a supersonic expansion discharge source into the instrument. To better understand how the source would work in the whole ion beam instrument, characterization studies are being performed with spectroscopy of HN_2^+ in a section of the system to ascertain the rotational temperature of the ion expansion. Attempts are also underway to measure the ion current from a beam formed from the expansion. Once the source in this environment is properly understood, we will reintegrate it to the rest of the ion beam system, completing SCRIBES. A. A. Mills, B. M. Siller, M. W. Porambo, M. Perera, H. Kreckel and B. J. McCall J. Chem. Phys., 135, 224201, (2011). K. N. Crabtree, C. A. Kauffman and B. J. McCall Rev. Sci. Instrum. 81, 086103, (2010).

  14. Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

    NASA Astrophysics Data System (ADS)

    Comes, Ryan; Gu, Man; Khokhlov, Mikhail; Liu, Hongxue; Lu, Jiwei; Wolf, Stuart A.

    2013-01-01

    Complex oxide epitaxial film growth is a rich and exciting field, owing to the wide variety of physical properties present in oxides. These properties include ferroelectricity, ferromagnetism, spin-polarization, and a variety of other correlated phenomena. Traditionally, high quality epitaxial oxide films have been grown via oxide molecular beam epitaxy or pulsed laser deposition. Here, we present the growth of high quality epitaxial films using an alternative approach, the pulsed electron-beam deposition technique. We demonstrate all three epitaxial growth modes in different oxide systems: Frank-van der Merwe (layer-by-layer); Stranski-Krastanov (layer-then-island); and Volmer-Weber (island). Analysis of film quality and morphology is presented and techniques to optimize the morphology of films are discussed.

  15. Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

    SciTech Connect

    Hirama, Kazuyuki Taniyasu, Yoshitaka; Karimoto, Shin-ichi; Krockenberger, Yoshiharu; Yamamoto, Hideki

    2014-03-03

    We investigated the formation of cubic boron nitride (c-BN) thin films on diamond (001) and (111) substrates by ion-beam-assisted molecular beam epitaxy (MBE). The metastable c-BN (sp{sup 3}-bonded BN) phase can be epitaxially grown as a result of the interplay between competitive phase formation and selective etching. We show that a proper adjustment of acceleration voltage for N{sub 2}{sup +} and Ar{sup +} ions is a key to selectively discriminate non-sp{sup 3} BN phases. At low acceleration voltage values, the sp{sup 2}-bonded BN is dominantly formed, while at high acceleration voltages, etching dominates irrespective of the bonding characteristics of BN.

  16. Electron beam source molecular beam epitaxial growth of analog graded Al(x)Ga(1-x)As ballistic transistors

    NASA Technical Reports Server (NTRS)

    Malik, Roger J.; Levi, Anthony F. J.

    1988-01-01

    A new method has been developed for the growth of graded band-gap Al(x)Ga(1-x)As alloys by molecular beam epitaxy which is based upon electron beam evaporation of the group III elements. The metal fluxes are measured and feedback controlled using a modulated ion gauge sensor. The system is computer controlled which allows precise programming of the Ga and Al evaporation rates. The large dynamic response of the metal sources enables growth of variable band-gap III-V alloys with arbitrary composition profiles. This new technique is demonstrated by synthesis of analog graded Al(x)Ga(1-x)As unipolar ballistic electron transistors.

  17. Laser ablation of Al-Ni alloys and multilayers

    NASA Astrophysics Data System (ADS)

    Roth, Johannes; Trebin, Hans-Rainer; Kiselev, Alexander; Rapp, Dennis-Michael

    2016-05-01

    Laser ablation of Al-Ni alloys and multilayers has been studied by molecular dynamics simulations. The method was combined with a two-temperature model to describe the interaction between the laser beam, the electrons, and the atoms. As a first step, electronic parameters for the alloys had to be found and the model developed originally for pure metals had to be generalized to multilayers. The modifications were verified by computing melting depths and ablation thresholds for pure Al and Ni. Here known data could be reproduced. The improved model was applied to the alloys Al_3Ni, AlNi and AlNi_3. While melting depths and ablation thresholds for AlNi behave unspectacular, sharp drops at high fluences are observed for Al_3Ni and AlNi_3. In both cases, the reason is a change in ablation mechanism from phase explosion to vaporization. Furthermore, a phase transition occurs in Al_3Ni. Finally, Al layers of various thicknesses on a Ni substrate have been simulated. Above threshold, 8 nm Al films are ablated as a whole while 24 nm Al films are only partially removed. Below threshold, alloying with a mixture gradient has been observed in the thin layer system.

  18. Collision dynamics of methyl radicals and highly vibrationally excited molecules using crossed molecular beams

    SciTech Connect

    Chu, P.M.Y.

    1991-10-01

    The vibrational to translational (V{yields}T) energy transfer in collisions between large highly vibrationally excited polyatomics and rare gases was investigated by time-of-flight techniques. Two different methods, UV excitation followed by intemal conversion and infrared multiphoton excitation (IRMPE), were used to form vibrationally excited molecular beams of hexafluorobenzene and sulfur hexafluoride, respectively. The product translational energy was found to be independent of the vibrational excitation. These results indicate that the probability distribution function for V{yields}T energy transfer is peaked at zero. The collisional relaxation of large polyatomic molecules with rare gases most likely occurs through a rotationally mediated process. Photodissociation of nitrobenzene in a molecular beam was studied at 266 nm. Two primary dissociation channels were identified including simple bond rupture to produce nitrogen dioxide and phenyl radical and isomerization to form nitric oxide and phenoxy radical. The time-of-flight spectra indicate that simple bond rupture and isomerization occurs via two different mechanisms. Secondary dissociation of the phenoxy radicals to carbon monoxide and cyclopentadienyl radicals was observed as well as secondary photodissociation of phenyl radical to give H atom and benzyne. A supersonic methyl radical beam source is developed. The beam source configuration and conditions were optimized for CH{sub 3} production from the thermal decomposition of azomethane. Elastic scattering of methyl radical and neon was used to differentiate between the methyl radicals and the residual azomethane in the molecular beam.

  19. Developer molecular size dependence of pattern formation of polymer type electron beam resists with various molecular weights

    NASA Astrophysics Data System (ADS)

    Takayama, Tomohiro; Asada, Hironori; Kishimura, Yukiko; Ochiai, Shunsuke; Hoshino, Ryoichi; Kawata, Atsushi

    2016-05-01

    The sensitivity and the resolution are affected by not only the nature of the resist such as a chemical structure and a molecular weight but also the developing process such as a developer molecular size. Exposure characteristics of positive-tone polymer resists having various molecular weights (Mw's) ranging from 60 k to 500 k are investigated using different ester solvents as a developer. The line-and-space (L/S) patterns are exposed by the electron beam writing system with an acceleration voltage of 50 kV and the samples are developed by amyl acetate, hexyl acetate and heptyl acetate. The pattern shape becomes better and the surface of the resist also becomes smoother with increasing developer molecular size, though the exposure dose required for the formation of the L/S pattern increases. The dose margin of pattern formation is also wider in all the resists having the different molecular weights. The dissolution in the unexposed portions of the 60k-Mw resist for heptyl acetate is reduced significantly compared with those for amyl acetate and hexyl acetate. The improvement of the pattern shape and the increasing of dose margin are remarkable in the low molecular weight resist. The 3σ of line width roughness tends to be smaller in the higher molecular weight resist and with the larger molecular size developer. Exposure experiment of the 35 nm pitch pattern using the 500k-Mw resist developed at the room temperature is presented.

  20. Ion Flux Measurements in Electron Beam Produced Plasmas in Atomic and Molecular Gases

    NASA Astrophysics Data System (ADS)

    Walton, S. G.; Leonhardt, D.; Blackwell, D. D.; Murphy, D. P.; Fernsler, R. F.; Meger, R. A.

    2001-10-01

    In this presentation, mass- and time-resolved measurements of ion fluxes sampled from pulsed, electron beam-generated plasmas will be discussed. Previous works have shown that energetic electron beams are efficient at producing high-density plasmas (10^10-10^12 cm-3) with low electron temperatures (Te < 1.0 eV) over the volume of the beam. Outside the beam, the plasma density and electron temperature vary due, in part, to ion-neutral and electron-ion interactions. In molecular gases, electron-ion recombination plays a significant role while in atomic gases, ion-neutral interactions are important. These interactions also determine the temporal variations in the electron temperature and plasma density when the electron beam is pulsed. Temporally resolved ion flux and energy distributions at a grounded electrode surface located adjacent to pulsed plasmas in pure Ar, N_2, O_2, and their mixtures are discussed. Measurements are presented as a function of operating pressure, mixture ratio, and electron beam-electrode separation. The differences in the results for atomic and molecular gases will also be discussed and related to their respective gas-phase kinetics.

  1. Crossed Molecular Beam Studies and Dynamics of Decomposition of Chemically Activated Radicals

    DOE R&D Accomplishments Database

    Lee, Y. T.

    1973-09-01

    The power of the crossed molecular beams method in the investigation of the dynamics of chemical reactions lies mainly in the direct observation of the consequences of single collisions of well controlled reactant molecules. The primary experimental observations which provide information on reaction dynamics are the measurements of angular and velocity distributions of reaction products.

  2. Pulsed supersonic molecular-beam coherent anti-Stokes Raman spectroscopy of C2H2

    NASA Technical Reports Server (NTRS)

    Duncan, M. D.; Byer, R. L.; Osterlin, P.

    1981-01-01

    A high-resolution coherent anti-Stokes Raman spectrum of C2H2 in a pulsed molecular beam was obtained and the resolved Q-branch spectrum was used to study the properties of the expansion. Cluster formation limited the minimum observed rotational temperature in the pure-acetylene expansion to 30 K.

  3. Growth of (111) GaAs on (111) Si using molecular-beam epitaxy

    NASA Technical Reports Server (NTRS)

    Radhakrishnan, G.; Liu, J.; Grunthaner, F.; Katz, J.; Morkoc, H.

    1988-01-01

    (111) GaAs layers have been grown epitaxially on (111) Si wafers, both on-axis as well as 3-deg off-axis towards the 1 -1 0 direction, using molecular-beam epitaxy. The grown layers have been characterized by scanning electron microscopy, X-ray diffraction, and transmission electron microscopy.

  4. History of Molecular Beam Research: Personal Reminiscences of the Important Evolutionary Period 1919-1933

    ERIC Educational Resources Information Center

    Estermann, Immanuel

    1975-01-01

    Describes the early historical period of the molecular beam method, including the Stern-Gerlach experiment, the work of Davisson and Germer, and the magnetic moment determinations for the proton, neutron, and deuteron. Contains some amusing historical sidelights on the research personalities that dominated that period. (MLH)

  5. Molecular Beam Optical Zeeman Spectroscopy of Vanadium Monoxide, VO

    NASA Astrophysics Data System (ADS)

    Nguyen, Trung; Zhang, Ruohan; Steimle, Timothy

    2016-06-01

    Like almost all astronomical studies, exoplanet investigations are observational endeavors that rely primarily on remote spectroscopic sensing to infer the physical properties of planets. Most exoplanet related information is inferred from to temporal variation of luminosity of the parent star. An effective method of monitoring this variation is via Magnetic Doppler Imaging (MDI), which uses optical polarimetry of paramagnetic molecules or atoms. One promising paramagnetic stellar absorption is the near infrared spectrum of VO. With this in mind, we have begun a project to record and analyze the field-free and Zeeman spectrum of the band. A cold (approx. 20 K) beam of VO was probed with a single frequency laser and detected using laser induced fluorescence. The determined spectral parameters will be discussed and compared to those extracted from the analysis of a hot spectrum. Supported by the National Science Foundation under the Grant No. CHE-1265885. O. Kochukhov, N. Rusomarov, J. A. Valenti, H. C. Stempels, F. Snik, M. Rodenhuis, N. Piskunov, V. Makaganiuk, C. U. Keller and C. M. Johns-Krull, Astron. Astrophys. 574 (Pt. 2), A79/71-A79/12 (2015). S. V. Berdyugina, Astron. Soc. Pac. Conf. Ser. 437 (Solar Polarization 6), 219-235 (2011). S. V. Berdyugina, P. A. Braun, D. M. Fluri and S. K. Solanki, Astron. Astrophys. 444 (3), 947-960 (2005). A. S. C. Cheung, P. G. Hajigeorgiou, G. Huang, S. Z. Huang and A. J. Merer, J. Mol. Spectrosc. 163 (2), 443-458 (1994)

  6. Ultra-sensitive high-precision spectroscopy of a fast molecular ion beam.

    PubMed

    Mills, Andrew A; Siller, Brian M; Porambo, Michael W; Perera, Manori; Kreckel, Holger; McCall, Benjamin J

    2011-12-14

    Direct spectroscopy of a fast molecular ion beam offers many advantages over competing techniques, including the generality of the approach to any molecular ion, the complete elimination of spectral confusion due to neutral molecules, and the mass identification of individual spectral lines. The major challenge is the intrinsic weakness of absorption or dispersion signals resulting from the relatively low number density of ions in the beam. Direct spectroscopy of an ion beam was pioneered by Saykally and co-workers in the late 1980s, but has not been attempted since that time. Here, we present the design and construction of an ion beam spectrometer with several improvements over the Saykally design. The ion beam and its characterization have been improved by adopting recent advances in electrostatic optics, along with a time-of-flight mass spectrometer that can be used simultaneously with optical spectroscopy. As a proof of concept, a noise-immune cavity-enhanced optical heterodyne molecular spectroscopy (NICE-OHMS) setup with a noise equivalent absorption of ~2 × 10(-11) cm(-1) Hz(-1/2) has been used to observe several transitions of the Meinel 1-0 band of N(2) (+) with linewidths of ~120 MHz. An optical frequency comb has been used for absolute frequency calibration of transition frequencies to within ~8 MHz. This work represents the first direct spectroscopy of an electronic transition in an ion beam, and also represents a major step toward the development of routine infrared spectroscopy of rotationally cooled molecular ions. PMID:22168687

  7. Ultra-sensitive high-precision spectroscopy of a fast molecular ion beam

    SciTech Connect

    Mills, Andrew A.; Siller, Brian M.; Porambo, Michael W.; Perera, Manori; Kreckel, Holger; McCall, Benjamin J.

    2011-12-14

    Direct spectroscopy of a fast molecular ion beam offers many advantages over competing techniques, including the generality of the approach to any molecular ion, the complete elimination of spectral confusion due to neutral molecules, and the mass identification of individual spectral lines. The major challenge is the intrinsic weakness of absorption or dispersion signals resulting from the relatively low number density of ions in the beam. Direct spectroscopy of an ion beam was pioneered by Saykally and co-workers in the late 1980s, but has not been attempted since that time. Here, we present the design and construction of an ion beam spectrometer with several improvements over the Saykally design. The ion beam and its characterization have been improved by adopting recent advances in electrostatic optics, along with a time-of-flight mass spectrometer that can be used simultaneously with optical spectroscopy. As a proof of concept, a noise-immune cavity-enhanced optical heterodyne molecular spectroscopy (NICE-OHMS) setup with a noise equivalent absorption of {approx}2 x 10{sup -11} cm{sup -1} Hz{sup -1/2} has been used to observe several transitions of the Meinel 1-0 band of N{sub 2}{sup +} with linewidths of {approx}120 MHz. An optical frequency comb has been used for absolute frequency calibration of transition frequencies to within {approx}8 MHz. This work represents the first direct spectroscopy of an electronic transition in an ion beam, and also represents a major step toward the development of routine infrared spectroscopy of rotationally cooled molecular ions.

  8. Electron-beam nanopatterning and spectral modulation of organic molecular light-emitting single crystals.

    PubMed

    Persano, Luana; Camposeo, Andrea; Pisignano, Dario; Burini, Andrea; Spearman, Peter; Tavazzi, Silvia

    2014-02-18

    The nanopatterning of light-emitting molecular crystals with semiconducting properties can be crucial for the development of future optoelectronic and nanoelectronic devices based on organic materials. In this respect, electron-beam writing is a powerful tool to realize patterns at the nanoscale, but it is still rarely applied to active organic materials. Here, sub-100-nm-scale nanopatterning is performed on the surface of quaterthiophene monocrystals by direct maskless electron-beam writing. Gratings are produced on organic crystals with periods ranging from 80 nm to 1 μm and single-line lateral dimensions ranging from 20 to 500 nm, with electron-beam exposure doses between 100 and 1500 μC/cm(2). The morphological and texturing properties of the pattern are discussed, together with the interaction mechanisms between the electron beam and the crystal. The resulting modulation of the light emission is consistent with Bragg scattering from the patterned periodic features.

  9. Ultra high resolution molecular beam cars spectroscopy with application to planetary atmospheric molecules

    NASA Technical Reports Server (NTRS)

    Byer, R. L.

    1982-01-01

    The measurement of high resolution pulsed and continuous wave (CW) coherent anti-Stokes Raman spectroscopy (CARS) measurements in pulsed and steady state supersonic expansions were demonstrated. Pulsed molecular beam sources were characterized, and saturation of a Raman transition and, for the first time, the Raman spectrum of a complex molecular cluster were observed. The observation of CW CARS spectra in a molecular expansion and the effects of transit time broadening is described. Supersonic expansion is established as a viable technique for high resolution Raman spectroscopy of cold molecules with resolutions of 100 MH2.

  10. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

    DOEpatents

    Brennan, Thomas M.; Hammons, B. Eugene; Tsao, Jeffrey Y.

    1992-01-01

    A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.

  11. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

    DOEpatents

    Brennan, T.M.; Hammons, B.E.; Tsao, J.Y.

    1992-12-15

    A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth. 3 figs.

  12. In-situ microscopic observation of GaAs surfaces during molecular beam epitaxy and metalorganic molecular beam epitaxy by scanning microprobe reflection high energy electron diffraction

    NASA Astrophysics Data System (ADS)

    Isu, Toshiro; Watanabe, Akiyoshi; Hata, Masayuki; Katayama, Yoshifumi

    1990-03-01

    Microscopic observations of epitaxial growth layers of GaAs were made with a scanning microprobe reflection high energy electron diffraction (RHEED). A scanning microprobe electron gun has been combined with a specially designed molecular beam epitaxy (MBE) system with both solid sources and gas sources. Scanning reflection electron microscope (SREM) images using the specular beam spot revealed granular features over the entire surfaces of MBE-grown GaAs layers, which were thought to come from undulation of the surface. Similar features of the surface were observed on the layers grown by gas-source MBE using trimethylgallium and arsine. A microscopic surface morphology was found to be fairly rough and the features depended on the species of the sources and growth conditions.

  13. Molecular beam optical Stark study of rhodium mononitride.

    PubMed

    Ma, Tongmei; Gengler, Jamie; Wang, Zhong; Wang, Hailing; Steimle, Timothy C

    2007-06-28

    The optical Stark effect in the Q(1) and R(0) lines of the [15.1]1-X (1)Sigma+ (1,0) band of rhodium mononitride (RhN) were recorded and analyzed to determine the permanent electric dipole moments mu for the X (1)Sigma+(upsilon=0) and [15.1]1(upsilon=1) states to be 2.43(5) and 1.75(1) D, respectively. The determined dipole moments are compared to predicted values obtained from density functional theory [Stevens et al., Chem. Phys. Lett. 421, 281 (2006)] and an all-electron ab initio calculation [Shim et al., J. Mol. Struct. THEOCHEM 393, 127 (1997)]. A simple single configuration molecular orbital correlation diagram is used to rationalize the relative values of mu for the 4d mononitrides and RhO. An electronic configuration for the [15.1]1 state is proposed based on the interpretation of the (103)Rh and (14)N magnetic hyperfine interactions.

  14. Improved electron ionization ion source for the detection of supersonic molecular beams

    NASA Astrophysics Data System (ADS)

    Amirav, Aviv; Fialkov, Alexander; Gordin, Alexander

    2002-08-01

    An improved electron ionization (EI) ion source is described, based on the modification of a Brink-type EI ion source through the addition of a second cage with a fine mesh outside the ion chamber. The added outer cage shields the inner ion cage (ionization zone) against the penetration of the filament and electron repeller potentials, and thus results in the provision of ions with narrower ion energy distribution, hence improved ion-beam quality. The closer to zero electrical field inside the ion cage enables improved filtration (rejection) of ions that are produced from vacuum background compounds, based on difference in ion energies of beam and background species. The improved background ion filtration and ion-beam quality resulted in 2.6 times higher mass spectrometric ion signal, combined with 6.4 times better signal to noise ratio, in comparison with the same ion source having a single cage. The dual cage ion source further provides a smaller or no reduction of the electron emission current upon lowering the electron energy for achieving softer EI and/or electron attachment ionization. It also improves the long-term mass spectral and signal reproducibility and enables fast, automated change of the electron energy. Consequently, the dual cage EI ion source is especially effective for use with gas chromatography mass spectrometry with supersonic molecular beams (SMB), liquid chromatography mass spectrometry with SMB, ion guns with SMB, and any other experimental systems with SMB or nonthermal molecular beams.

  15. Molecular Beam Optical Study of Gold Sulfide and Gold Oxide

    NASA Astrophysics Data System (ADS)

    Zhang, Ruohan; Yu, Yuanqin; Steimle, Timothy

    2016-06-01

    Gold-sulfur and gold-oxygen bonds are key components to numerous established and emerging technologies that have applications as far ranging as medical imaging, catalysis, electronics, and material science. A major theoretical challenge for describing this bonding is correctly accounting for the large relativistic and electron correlation effects. Such effects are best studied in diatomic, AuX, molecules. Recently, the observed AuS electronic state energy ordering was measured and compared to a simple molecular orbital diagram prediction. Here we more thoroughly investigate the nature of the electronic states of both AuS and AuO from the analysis of high-resolution (FWHM\\cong35MHz) optical Zeeman spectroscopy of the (0,0){B}2Σ--{X}2Π3/2 bands. The determined fine and hyperfine parameters for the {B}2Σ- state of AuO differ from those extracted from the analysis of a hot, Doppler-limited, spectrum. It is demonstrated that the nature of the {B}2Σ- states of AuO and AuS are radically different. The magnetic tuning of AuO and AuS indicates that the {B}2Σ- states are heavily contaminated. Supported by the National Science Foundation under Grant No.1265885. D. L. Kokkin, R. Zhang, T. C. Steimle, I. A. Wyse, B. W. Pearlman and T. D. Varberg, J. Phys. Chem. A., 119(48), 4412, 2015. L. C. O'Brien, B. A. Borchert, A. Farquhar, S. Shaji, J. J. O'Brien and R. W. Field, J. Mol. Spectrosc., 252(2), 136, 2008

  16. Three-dimensional imaging of the ultracold plasma formed in a supersonic molecular beam

    SciTech Connect

    Schulz-Weiling, Markus; Grant, Edward

    2015-06-29

    Double-resonant excitation of nitric oxide in a seeded supersonic molecular beam forms a state-selected Rydberg gas that evolves to form an ultracold plasma. This plasma travels with the propagation of the molecular beam in z over a variable distance as great as 600 mm to strike an imaging detector, which records the charge distribution in the dimensions, x and y. The ω{sub 1} + ω{sub 2} laser crossed molecular beam excitation geometry convolutes the axial Gaussian distribution of NO in the molecular beam with the Gaussian intensity distribution of the perpendicularly aligned laser beam to create an ellipsoidal volume of Rydberg gas. Detected images describe the evolution of this initial density as a function of selected Rydberg gas initial principal quantum number, n{sub 0}, ω{sub 1} laser pulse energy (linearly related to Rydberg gas density, ρ{sub 0}) and flight time. Low-density Rydberg gases of lower principal quantum number produce uniformly expanding, ellipsoidal charge-density distributions. Increase either of n{sub 0} or ρ{sub 0} breaks the ellipsoidal symmetry of plasma expansion. The volume bifurcates to form repelling plasma volumes. The velocity of separation depends on n{sub 0} and ρ{sub 0} in a way that scales uniformly with ρ{sub e}, the density of electrons formed in the core of the Rydberg gas by prompt Penning ionization. Conditions under which this electron gas drives expansion in the long axis dimension of the ellipsoid favours the formation of counter-propagating shock waves.

  17. Pulsed supersonic molecular beam for characterization of chemically active metal-organic complexes at surfaces

    NASA Astrophysics Data System (ADS)

    Lear, Amanda M.

    Metal-organic coordination networks (MOCNs) at surfaces consist of a complex of organic ligands bound to an atomic metal center. The MOCNs, when chosen appropriately, can form highly-ordered arrays at surfaces. Ultra-high vacuum surface studies allow control of surface composition and provide 2D growth restrictions, which lead to under-coordinated metal centers. These systems provide an opportunity to tailor the chemical function of the metal centers due to the steric restrictions imposed by the surface. Tuning the adsorption/desorption energy at a metal center and developing a cooperative environment for catalysis are the key scientific questions that motivate the construction of a molecular beam surface analysis system. Characterization of the created systems can be performed utilizing a pulsed supersonic molecular beam (PSMB) in unison with a quadrupole mass spectrometer. A PSMB allows for the highly controlled delivery of reactants with well-defined energy to a given platform making it possible to elucidate detailed chemical tuning information. In this thesis, a summary of prior theoretical molecular beam derivations is provided. Design considerations and an overview of the construction procedure for the current molecular beam apparatus, including initial characterization experiments, are presented. By impinging an Ar beam on a Ag(111) surface, the location of the specular angle (˜65°) and rough sample perimeter coordinates were determined. Additionally, surface analysis experiments, mainly Auger Electron Spectroscopy (AES), were performed to investigate the oxidation of epitaxial graphene on the SiC(0001) surface utilizing an oxygen cracking method. The AES experiments are described in detail and highlight the challenges that were faced when several different graphene samples were used for the oxygen adsorption/desorption experiments.

  18. HgTe-CdTe-InSb heterostructures by molecular beam epitaxy

    SciTech Connect

    Ballingall, J.M.; Leopold, D.J.; Peterman, D.J.

    1985-08-01

    HgTe-CdTe heterostructures have been grown by molecular beam epitaxy on (100) InSb substrates. Separate elemental Hg and Te beams were used for the HgTe growth at a substrate temperature of 160 C. X-ray diffraction measurements indicate that thin epitaxial layers are of high crystalline quality. Secondary-ion mass spectroscopy measurements show substantial In and Sb diffusion into the epitaxial layers with a concentration enhancement at the HgTe-CdTe interface. 9 references.

  19. Proposed Molecular Beam Determination of Energy Partition in the Photodissociation of Polyatomic Molecules

    DOE R&D Accomplishments Database

    Zare, P. N.; Herschbach, D. R.

    1964-01-29

    Conventional photochemical experiments give no information about the partitioning of energy between translational recoil and internal excitation of the fragment molecules formed in photodissociation of a polyatomic molecule. In a molecular beam experiment, it becomes possible to determine the energy partition from the form of the laboratory angular distribution of one of the photodissociation products. A general kinematic analysis is worked out in detail, and the uncertainty introduced by the finite angular resolution of the apparatus and the velocity spread in the parent beam is examined. The experimental requirements are evaluated for he photolysis of methyl iodide by the 2537 angstrom Hg line.

  20. LC-MS with electron ionization of cold molecules in supersonic molecular beams

    NASA Astrophysics Data System (ADS)

    Granot, Ori; Amirav, Aviv

    2005-06-01

    A new approach is described for the combination of electron ionization and LC-MS based on sample ionization as vibrationally cold molecules in a supersonic molecular beam (Cold EI). Cold EI of sample compounds in liquid solutions (methanol, acetonitrile, water, etc.) is achieved through spray formation, followed by soft thermal vaporization of the sample particles prior to their supersonic expansion and direct electron ionization of the sample compounds while they are contained in a supersonic molecular beam (SMB). Cold EI mass spectra were demonstrated to combine an enhanced molecular ion and improved mass spectral information (in comparison with standard EI), plus all the library searchable fragments. Cold EI enables the ionization of a broad range of compounds, including the full range of non-polar samples. Four orders of magnitude linear dynamic range is demonstrated and a detection limit of 2 pg was achieved for a 774 amu compound in single ion monitoring mode at m/z = 774. The method and apparatus are under continuous development and we feel that it can excel particularly in the analysis of unknown samples, while enabling fast LC-MS analysis through automated mass spectral deconvolution of coeluting LC peaks. In addition, the same MS system can also serve as an advanced GC-MS with supersonic molecular beams.

  1. Photochemical ablation of organic solids

    NASA Astrophysics Data System (ADS)

    Yingling, Yaroslava G.; Garrison, Barbara J.

    2003-04-01

    We have investigated by molecular dynamics simulations the ablation of material that is onset by photochemical processes. We compare this system with only photochemical processes to a system containing photochemical and photothermal processes. The simulations reveal that ablation by purely photochemical processes is accompanied by the ejection of relatively cold massive molecular clusters from the surface of the sample. The top of the plume exhibits high temperatures whereas the residual part of the sample is cold. The removal of the damaged material through big molecular cluster ejection is consistent with experimental observations of low heat damage of material.

  2. Rubidium beam flux dependence of film properties of Ba1 - xRbxBiO3 deposited by molecular-beam epitaxy using distilled ozone

    NASA Astrophysics Data System (ADS)

    Ogihara, M.; Toda, F.; Makita, T.; Abe, H.

    1993-10-01

    We have focused our attention on the dependence of Ba1-xRbxBiO3 (BRBO) film composition ratio and film properties on rubidium-beam-flux intensity. BRBO films were deposited on MgO(100) substrates by molecular-beam epitaxy (MBE) using distilled ozone. Systematic measurements showed that the rubidium content was nearly independent of rubidium-beam-flux intensity in a wide beam-flux range. Therefore, it can be concluded that some degree of self-control of rubidium stoichiometry is actually possible in BRBO film growth by MBE. This study also revealed that the BRBO film properties had strong dependences on rubidium-beam-flux intensity even in the range for self-control of rubudium stoichiometry. Our study also clarified that rubidium-beam flux affects the barium content in the BRBO film.

  3. A new high intensity and short-pulse molecular beam valve

    NASA Astrophysics Data System (ADS)

    Yan, B.; Claus, P. F. H.; van Oorschot, B. G. M.; Gerritsen, L.; Eppink, A. T. J. B.; van de Meerakker, S. Y. T.; Parker, D. H.

    2013-02-01

    In this paper, we report on the design and performance of a new home-built pulsed gas valve, which we refer to as the Nijmegen Pulsed Valve (NPV). The main output characteristics include a short pulse width (as short as 20 μs) combined with operating rates up to 30 Hz. The operation principle of the NPV is based on the Lorentz force created by a pulsed current passing through an aluminum strip located within a magnetic field, which opens the nozzle periodically. The amplitude of displacement of the opening mechanism is sufficient to allow the use of nozzles with up to 1.0 mm diameter. To investigate the performance of the valve, several characterizations were performed with different experimental methods. First, a fast ionization gauge was used to measure the beam intensity of the free jet emanating from the NPV. We compare free jets from the NPV with those from several other pulsed valves in current use in our laboratory. Results showed that a high intensity and short pulse-length beam could be generated by the new valve. Second, the NPV was tested in combination with a skimmer, where resonance enhanced multiphoton ionization combined with velocity map imaging was used to show that the NPV was able to produce a pulsed molecular beam with short pulse duration (˜20 μs using 0.1% NO/He at 6 bars) and low rotational temperature (˜1 K using 0.5% NO/Ar at 6 bars). Third, a novel two-point pump-probe method was employed which we label double delay scan. This method allows a full kinematic characterization of the molecular beam, including accurate speed ratios at different temporal positions. It was found that the speed ratio was maximum (S = 50 using 0.1% NO/He at 3 bars) at the peak position of the molecular beam and decreased when it was on the leading or falling edge.

  4. Photo-metalorganic molecular-beam epitaxy: A new epitaxial growth technique

    SciTech Connect

    Tokumitsu, E.; Yamada, T.; Konagai, M.; Takahashi, K.

    1989-05-01

    Metalorganic molecular-beam epitaxy (MOMBE) combines many important advantages of molecular-beam epitaxy and metalorganic chemical vapor deposition. One of the most important features of MOMBE is that photochemical reaction can be used and we can call this new technique ''photo-MOMBE.'' Triisobutylaluminum (TIBA) has been used in photo-MOMBE instead of triethylaluminum (TEA) as a new aluminum source in order to enhance the photodecomposition. The optical absorption coefficient of TIBA for 193 nm was found to be three times greater than that of TEA. Selective deposition of Al, AlAs, and GaAlAs was carried out by using an ArF excimer laser. The Al mole fraction of GaAlAs ternary alloy grown with the excimer laser irradiation was greater than that of the film grown without the laser irradiation.

  5. Comb-assisted cavity ring-down spectroscopy of a buffer-gas-cooled molecular beam.

    PubMed

    Santamaria, Luigi; Sarno, Valentina Di; Natale, Paolo De; Rosa, Maurizio De; Inguscio, Massimo; Mosca, Simona; Ricciardi, Iolanda; Calonico, Davide; Levi, Filippo; Maddaloni, Pasquale

    2016-06-22

    We demonstrate continuous-wave cavity ring-down spectroscopy of a partially hydrodynamic molecular beam emerging from a buffer-gas-cooling source. Specifically, the (ν1 + ν3) vibrational overtone band of acetylene (C2H2) around 1.5 μm is accessed using a narrow-linewidth diode laser stabilized against a GPS-disciplined rubidium clock via an optical frequency comb synthesizer. As an example, the absolute frequency of the R(1) component is measured with a fractional accuracy of ∼1 × 10(-9). Our approach represents the first step towards the extension of more sophisticated cavity-enhanced interrogation schemes, including saturated absorption cavity ring-down or two-photon excitation, to buffer-gas-cooled molecular beams.

  6. Origin and reduction of interfacial boron spikes in silicon molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Iyer, S. S.; Delage, S. L.; Scilla, G. J.

    1988-02-01

    An interfacial boron spike is formed during the molecular beam epitaxial growth of Si. We show two possible sources for this unintentional spike. We have found that some boron contamination invariably occurs when silicon surfaces are exposed to air. A greater degree of contamination results when the sample is heated to temperatures greater than 800 °C, as required for creating an atomically clean surface prior to molecular beam epitaxial growth. A source of boron suboxides, internal to the ultrahigh-vacuum system, was detected by residual gas analysis. While anneals at 1000 °C or greater result in almost complete activation of the B, we observe that for a cleaning regimen at 850 °C, less than 10% of the boron is active. Our results are consistent with the oxidation of the suboxides on oxygen-contaminated surfaces and their subsequent reduction at higher temperatures by silicon, with the volatization of SiO. Subsequent incorporation is by indiffusion.

  7. Comb-assisted cavity ring-down spectroscopy of a buffer-gas-cooled molecular beam.

    PubMed

    Santamaria, Luigi; Sarno, Valentina Di; Natale, Paolo De; Rosa, Maurizio De; Inguscio, Massimo; Mosca, Simona; Ricciardi, Iolanda; Calonico, Davide; Levi, Filippo; Maddaloni, Pasquale

    2016-06-22

    We demonstrate continuous-wave cavity ring-down spectroscopy of a partially hydrodynamic molecular beam emerging from a buffer-gas-cooling source. Specifically, the (ν1 + ν3) vibrational overtone band of acetylene (C2H2) around 1.5 μm is accessed using a narrow-linewidth diode laser stabilized against a GPS-disciplined rubidium clock via an optical frequency comb synthesizer. As an example, the absolute frequency of the R(1) component is measured with a fractional accuracy of ∼1 × 10(-9). Our approach represents the first step towards the extension of more sophisticated cavity-enhanced interrogation schemes, including saturated absorption cavity ring-down or two-photon excitation, to buffer-gas-cooled molecular beams. PMID:27273337

  8. High temperature and high resolution uv photoelectron spectroscopy using supersonic molecular beams

    SciTech Connect

    Wang, Lai-Sheng; Reutt-Robey, J.E.; Niu, B.; Lee, Y.T.; Shirley, D.A.; Maryland Univ., College Park, MD . Dept. of Chemistry and Biochemistry; Lawrence Berkeley Lab., CA )

    1989-07-01

    A high temperature molecular beam source with electron bombardment heating has been built for high resolution photoelectron spectroscopic studies of high temperature species and clusters. This source has the advantages of: producing an intense, continuous, seeded molecular beam, eliminating the interference of the heating mechanism from the photoelectron measurement. Coupling the source with our hemispherical electron energy analyzer, we can obtain very high resolution HeI{alpha} (584{angstrom}) photoelectron spectra of high temperature species. Vibrationally-resolved photoelectron spectra of PbSe, As{sub 2}, As{sub 4}, and ZnCl{sub 2} are shown to demonstrate the performance of the new source. 25 refs., 8 figs., 1 tab.

  9. Beam deflection measurement of bound-electronic and rotational nonlinear refraction in molecular gases.

    PubMed

    Reichert, Matthew; Zhao, Peng; Reed, Jennifer M; Ensley, Trenton R; Hagan, David J; Van Stryland, Eric W

    2015-08-24

    A polarization-resolved beam deflection technique is used to separate the bound-electronic and molecular rotational components of nonlinear refractive transients of molecular gases. Coherent rotational revivals from N(2), O(2), and two isotopologues of carbon disulfide (CS(2)), are identified in gaseous mixtures. Dephasing rates, rotational and centrifugal distortion constants of each species are measured. Polarization at the magic angle allows unambiguous measurement of the bound-electronic nonlinear refractive index of air and second hyperpolarizability of CS(2). Agreement between gas and liquid phase second hyperpolarizability measurements is found using the Lorentz-Lorenz local field correction.

  10. Molecular beams entwined with quantum theory: A bouquet for Max Planck

    NASA Astrophysics Data System (ADS)

    Herschbach, D.

    2001-01-01

    In an era when the fledgling quantum theory was uncertain and even gave contradictory answers, Otto Stern undertook to employ molecular beams to test directly fundamental aspects of the theory. During 1921-1935, this led to five decisive experiments reviewed here, resulting in the discovery or demonstration of space quantization, de Broglie matter waves, anomalous magnetic moments of the proton and neutron, recoil of an atom on emission of a photon, and the limitation of scattering cross-sections for molecular collisions imposed by the uncertainty principle.

  11. Monte Carlo simulation of molecular flow in a neutral beam injector and comparison with experiment

    SciTech Connect

    Lillie, R.A.; Alsmiller, R.G. Jr.; Gabriel, T.A.; Santoro, R.T.; Schwenterly, S.W.

    1982-04-01

    Monte Carlo calculations have been performed to obtain estimates of the background gas pressure and molecular number density as a function of position in the PDX-prototype neutral beam injector, which has undergone testing at the Oak Ridge National Laboratory. Estimates of these quantities together with the transient and steady-state energy deposition and molecular capture rates on the cryopanels of the cryocondensation pumps and the molecular escape rate from the injector were obtained utilizing a detailed geometric model of the neutral beam injector. The molecular flow calculations were performed using an existing Monte Carlo radiation transport code, which was modified slightly to monitor the energy of the background gas molecules. The credibility of these calculations is demonstrated by the excellent agreement between the calculated and experimentally measured background gas pressure in front of the beamline calorimeter located in the downstream drift region of the injector. The usefulness of the calculational method as a design tool is illustrated by a comparison of the integrated beamline molecular density over the drift region of the injector for three modes of cryopump operation.

  12. Monte Carlo simulation of molecular flow in a neutral-beam injector and comparison with experiment

    SciTech Connect

    Lillie, R.A.; Gabriel, T.A.; Schwenterly, S.W.; Alsmiller, R.G. Jr.; Santoro, R.T.

    1981-09-01

    Monte Carlo calculations have been performed to obtain estimates of the background gas pressure and molecular number density as a function of position in the PDX-prototype neutral beam injector which has undergone testing at the Oak Ridge National Laboratory. Estimates of these quantities together with the transient and steady-state energy deposition and molecular capture rates on the cryopanels of the cryocondensation pumps and the molecular escape rate from the injector were obtained utilizing a detailed geometric model of the neutral beam injector. The molecular flow calculations were performed using an existing Monte Carlo radiation transport code which was modified slightly to monitor the energy of the background gas molecules. The credibility of these calculations is demonstrated by the excellent agreement between the calculated and experimentally measured background gas pressure in front of the beamline calorimeter located in the downstream drift region of the injector. The usefulness of the calculational method as a design tool is illustrated by a comparison of the integrated beamline molecular density over the drift region of the injector for three modes of cryopump operation.

  13. A 100 microsec, reliable, 10 Hz pulsed supersonic molecular beam source

    NASA Technical Reports Server (NTRS)

    Byer, R. L.; Duncan, M. D.

    1981-01-01

    A 10-Hz repetition rate, 100-microsec duration, reliable pulsed supersonic molecular beam source is described. Mechanical and electrical design of the pulsed valve are given in detail. Characteristics of the supersonic expansion obtained using coherent anti-Stokes Raman spectroscopy in acetylene are presented. They include pulse shape, gas rotational and translational cooling as a function of distance from the nozzle, clustering effects, and shock heating at the leading edge of the pulse.

  14. Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

    NASA Technical Reports Server (NTRS)

    Benz, R. G., II; Huang, P. C.; Stock, S. R.; Summers, C. J.

    1988-01-01

    The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

  15. ZnSe/CdSe Superlattice Nanowires by Catalyst-assisted Molecular Beam Epitaxy

    SciTech Connect

    Karczewski, G.; Dluzewski, P.; Kret, S.; Klopotowski, L.; Wojtowicz, T.

    2007-04-10

    We report on Au catalyst-assisted molecular beam epitaxy growth and properties of pure ZnSe and ZnSe/CdSe superlattice nanowires. In particular, we concentrate our attention on the morphological characterization by transmission and scanning electron microscopy of pure ZnSe NWs and we compare their optical properties with those of ZnSe/CdSe superlattice NWs fabricated at the same technological conditions.

  16. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

    SciTech Connect

    Cruz Hernandez, Esteban; Rojas Ramirez, Juan-Salvador; Contreras Hernandez, Rocio; Lopez Lopez, Maximo; Pulzara Mora, Alvaro; Mendez Garcia, Victor H.

    2007-02-09

    In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface.

  17. Antimony-assisted carbonization of Si(111) with solid source molecular beam epitaxy

    SciTech Connect

    Hackley, Justin; Richardson, Christopher J. K.; Sarney, Wendy L.

    2013-11-15

    The carbonization of an antimony-terminated Si (111) surface in a solid source molecular beam epitaxy system is presented. Reflection high-energy electron diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, and cross-sectional transmission electron microscopy are used to characterize samples grown with and without antimony termination. It is shown that the antimony-terminated surface promotes the formation of thin, smooth and continuous SiC films at a relatively low temperature of 800 °C.

  18. (In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties

    SciTech Connect

    Bouravleuv, A. D. Nevedomskii, V. N.; Ubyivovk, E. V.; Sapega, V. F.; Khrebtov, A. I.; Samsonenko, Yu. B.; Cirlin, G. E.; Ustinov, V. M.

    2013-08-15

    Self-assembled (In,Mn)As quantum dots are synthesized by molecular-beam epitaxy on GaAs (001) substrates. The experimental results obtained by transmission electron microscopy show that doping of the central part of the quantum dots with Mn does not bring about the formation of structural defects. The optical properties of the samples, including those in external magnetic fields, are studied.

  19. Genetic Ablation of Calcium-independent Phospholipase A2γ Leads to Alterations in Hippocampal Cardiolipin Content and Molecular Species Distribution, Mitochondrial Degeneration, Autophagy, and Cognitive Dysfunction*

    PubMed Central

    Mancuso, David J.; Kotzbauer, Paul; Wozniak, David F.; Sims, Harold F.; Jenkins, Christopher M.; Guan, Shaoping; Han, Xianlin; Yang, Kui; Sun, Gang; Malik, Ibrahim; Conyers, Sara; Green, Karen G.; Schmidt, Robert E.; Gross, Richard W.

    2009-01-01

    Genetic ablation of calcium-independent phospholipase A2γ (iPLA2γ) results in profound alterations in hippocampal phospholipid metabolism and mitochondrial phospholipid homeostasis resulting in enlarged and degenerating mitochondria leading to autophagy and cognitive dysfunction. Shotgun lipidomics demonstrated multiple alterations in hippocampal lipid metabolism in iPLA2γ−/− mice including: 1) a markedly elevated hippocampal cardiolipin content with an altered molecular species composition characterized by a shift to shorter chain length molecular species; 2) alterations in both choline and ethanolamine glycerophospholipids, including a decreased plasmenylethanolamine content; 3) increased oxidized phosphatidylethanolamine molecular species; and 4) an increased content of ceramides. Electron microscopic examination demonstrated the presence of enlarged heteromorphic lamellar structures undergoing degeneration accompanied by the presence of ubiquitin positive spheroid inclusion bodies. Purification of these enlarged heteromorphic lamellar structures by buoyant density centrifugation and subsequent SDS-PAGE and proteomics identified them as degenerating mitochondria. Collectively, these results identify the obligatory role of iPLA2γ in neuronal mitochondrial lipid metabolism and membrane structure demonstrating that iPLA2γ loss of function results in a mitochondrial neurodegenerative disorder characterized by degenerating mitochondria, autophagy, and cognitive dysfunction. PMID:19840936

  20. Collapse of a composite beam made from ultra high molecular-weight polyethylene fibres

    NASA Astrophysics Data System (ADS)

    Liu, G.; Thouless, M. D.; Deshpande, V. S.; Fleck, N. A.

    2014-02-01

    Hot-pressed laminates with a [0/90]48 lay-up, consisting of 83% by volume of ultra high molecular-weight polyethylene (UHMWPE) fibres, and 17% by volume of polyurethane (PU) matrix, were cut into cantilever beams and subjected to transverse end-loading. The collapse mechanisms were observed both visually and by X-ray scans. Short beams deform elastically and collapse plastically in longitudinal shear, with a shear strength comparable to that observed in double notch, interlaminar shear tests. In contrast, long cantilever beams deform in bending and collapse via a plastic hinge at the built-in end of the beam. The plastic hinge is formed by two wedge-shaped microbuckle zones that grow in size and in intensity with increasing hinge rotation. This new mode of microbuckling under macroscopic bending involves both elastic bending and shearing of the plies, and plastic shear of the interface between each ply. The double-wedge pattern contrasts with the more usual parallel-sided plastic microbuckle that occurs in uniaxial compression. Finite element simulations and analytical models give additional insight into the dominant material and geometric parameters that dictate the collapse response of the UHMWPE composite beam in bending. Detailed comparisons between the observed and predicted collapse responses are used in order to construct a constitutive model for laminated UHMWPE composites.

  1. Electron ionization LC-MS with supersonic molecular beams--the new concept, benefits and applications.

    PubMed

    Seemann, Boaz; Alon, Tal; Tsizin, Svetlana; Fialkov, Alexander B; Amirav, Aviv

    2015-11-01

    A new type of electron ionization LC-MS with supersonic molecular beams (EI-LC-MS with SMB) is described. This system and its operational methods are based on pneumatic spray formation of the LC liquid flow in a heated spray vaporization chamber, full sample thermal vaporization and subsequent electron ionization of vibrationally cold molecules in supersonic molecular beams. The vaporized sample compounds are transferred into a supersonic nozzle via a flow restrictor capillary. Consequently, while the pneumatic spray is formed and vaporized at above atmospheric pressure the supersonic nozzle backing pressure is about 0.15 Bar for the formation of supersonic molecular beams with vibrationally cold sample molecules without cluster formation with the solvent vapor. The sample compounds are ionized in a fly-though EI ion source as vibrationally cold molecules in the SMB, resulting in 'Cold EI' (EI of vibrationally cold molecules) mass spectra that exhibit the standard EI fragments combined with enhanced molecular ions. We evaluated the EI-LC-MS with SMB system and demonstrated its effectiveness in NIST library sample identification which is complemented with the availability of enhanced molecular ions. The EI-LC-MS with SMB system is characterized by linear response of five orders of magnitude and uniform compound independent response including for non-polar compounds. This feature improves sample quantitation that can be approximated without compound specific calibration. Cold EI, like EI, is free from ion suppression and/or enhancement effects (that plague ESI and/or APCI) which facilitate faster LC separation because full separation is not essential. The absence of ion suppression effects enables the exploration of fast flow injection MS-MS as an alternative to lengthy LC-MS analysis. These features are demonstrated in a few examples, and the analysis of the main ingredients of Cannabis on a few Cannabis flower extracts is demonstrated. Finally, the advantages of

  2. High throughput solar cell ablation system

    SciTech Connect

    Harley, Gabriel; Pass, Thomas; Cousins, Peter John; Viatella, John

    2014-10-14

    A solar cell is formed using a solar cell ablation system. The ablation system includes a single laser source and several laser scanners. The laser scanners include a master laser scanner, with the rest of the laser scanners being slaved to the master laser scanner. A laser beam from the laser source is split into several laser beams, with the laser beams being scanned onto corresponding wafers using the laser scanners in accordance with one or more patterns. The laser beams may be scanned on the wafers using the same or different power levels of the laser source.

  3. High throughput solar cell ablation system

    SciTech Connect

    Harley, Gabriel; Pass, Thomas; Cousins, Peter John; Viatella, John

    2012-09-11

    A solar cell is formed using a solar cell ablation system. The ablation system includes a single laser source and several laser scanners. The laser scanners include a master laser scanner, with the rest of the laser scanners being slaved to the master laser scanner. A laser beam from the laser source is split into several laser beams, with the laser beams being scanned onto corresponding wafers using the laser scanners in accordance with one or more patterns. The laser beams may be scanned on the wafers using the same or different power levels of the laser source.

  4. Development of a molecular beam technique to study early solar system silicon reactions

    NASA Technical Reports Server (NTRS)

    Dong, Q. W.; Thiemens, M. H.

    1993-01-01

    Silicon monoxide is one of the major gas phase silicon bearing components observed in astronomical environments. Silicon oxide serves as the major rock forming material for terrestrial and meteoritic bodies. It is known that several gas phase reactions produce mass independent isotopic fractionations which possess the same delta(O-17)/delta(O-18) ratio observed in Allende inclusions. The general symmetry dependence of the chemically produced mass independent isotopic fractionation process suggests that there are several plausible reactions which could occur in the early solar system which may lead to production of the observed meteoritic oxygen isotopic anomalies. An important component in exploring the role of such processes is the need to experimentally determine the isotopic fractionations for specific reactions of relevance to the early solar system. It has already been demonstrated that atomic oxygen reaction with CO, a major nebular oxygen bearing species, produces a large (approximately 90 percent), mass independent isotopic fractionation. The next hurdle regarding assessing the involvement of symmetry dependent isotopic fractionation processes in the pre-solar nebula is to determine isotopic fractionation factors associated with gas phase reactions of metallic oxides. In particular, a reaction such as O + SiO yields SiO2 is a plausible nebular reaction which could produce a delta(O-17) is approximately delta(O-18) fractionation based upon molecular symmetry considerations. While the isotopic fractionations during silicate evaporation and condensation have been determined, there are no isotopic studies of controlled, gas phase nucleation processes. In order to carefully control the reaction kinetics, a molecular beam apparatus has been constructed. This system produces a supersonic, collimated beam of SiO molecules which is reacted with a second beam of oxygen atoms. An important feature of molecular beams is that they operate at sufficiently low pressures

  5. Molecular characterization and developmental expression of vitellogenin in the oriental river prawn Macrobrachium nipponense and the effects of RNA interference and eyestalk ablation on ovarian maturation.

    PubMed

    Bai, Hongkun; Qiao, Hui; Li, Fajun; Fu, Hongtuo; Sun, Shengming; Zhang, Wenyi; Jin, Shubo; Gong, Yongsheng; Jiang, Sufei; Xiong, Yiwei

    2015-05-10

    Vitellogenin (Vg) is the precursor of yolk protein, which functions as a nutritive resource that is important for embryonic growth and gonad development. In this study, the cDNA encoding the Vg gene from the oriental river prawn Macrobrachium nipponense was cloned using expressed sequence tag (EST) analysis and the rapid amplification of cDNA ends (RACE) approach. The transcript encoded 2536 amino acids with an estimated molecular mass of 286.810 kDa. Quantitative real-time PCR indicated high expression of Mn-Vg in the female ovary, hemocytes, and hepatopancreas. As ovaries developed, the expression level of Mn-Vg increased in both the hepatopancreas and ovary. In the hepatopancreas, the expression level rose more slowly at the early stage of vitellogenesis and reached the peak more rapidly compared to the expression pattern in ovary. The observed changes in Mn-Vg expression level at different development stages suggest the role of nutrient source in embryonic and larval development. Eyestalk ablation caused the Mn-Vg expression level to increase significantly compared to eyestalk-intact groups during the ovary development stages. Ablation accelerated ovary maturation by removing hormone inhibition of Mn-Vg in the hepatopancreas and ovary. In adult females, Mn-Vg dsRNA injection resulted in decreased expression of Mn-Vg in both the hepatopancreas and ovary, and two injection treatment dramatically delayed ovary maturation. Vg RNA interference down-regulated the vitellogenin receptor (VgR) expression level in the ovary, which illustrates the close relationship between Vg and VgR in the process of vitellogenesis. PMID:25499697

  6. Bone and Soft Tissue Ablation

    PubMed Central

    Foster, Ryan C.B.; Stavas, Joseph M.

    2014-01-01

    Bone and soft tissue tumor ablation has reached widespread acceptance in the locoregional treatment of various benign and malignant musculoskeletal (MSK) lesions. Many principles of ablation learned elsewhere in the body are easily adapted to the MSK system, particularly the various technical aspects of probe/antenna design, tumoricidal effects, selection of image guidance, and methods to reduce complications. Despite the common use of thermal and chemical ablation procedures in bone and soft tissues, there are few large clinical series that show longitudinal benefit and cost-effectiveness compared with conventional methods, namely, surgery, external beam radiation, and chemotherapy. Percutaneous radiofrequency ablation of osteoid osteomas has been evaluated the most and is considered a first-line treatment choice for many lesions. Palliation of painful metastatic bone disease with thermal ablation is considered safe and has been shown to reduce pain and analgesic use while improving quality of life for cancer patients. Procedure-related complications are rare and are typically easily managed. Similar to all interventional procedures, bone and soft tissue lesions require an integrated approach to disease management to determine the optimum type of and timing for ablation techniques within the context of the patient care plan. PMID:25053865

  7. The Cl + O3 reaction: a detailed QCT simulation of molecular beam experiments.

    PubMed

    Menéndez, M; Castillo, J F; Martínez-Haya, B; Aoiz, F J

    2015-10-14

    We have studied in detail the dynamics of the Cl + O3 reaction in the 1-56 kcal mol(-1) collision energy range using quasi-classical trajectory (QCT) calculations on a recent potential energy surface (PES) [J. F. Castillo et al., Phys. Chem. Chem. Phys., 2011, 13, 8537]. The main goal of this work has been to assess the accuracy of the PES and the reliability of the QCT method by comparison with the existing crossed molecular beam results [J. Zhang and Y. T. Lee J. Phys. Chem. A, 1997, 101, 6485]. For this purpose, we have developed a methodology that allows us to determine the experimental observables in crossed molecular beam experiments (integral and differential cross sections, recoil velocity distributions, scattering angle-recoil velocity polar maps, etc.) as continuous functions of the collision energy. Using these distributions, raw experimental data in the laboratory frame (angular distributions and time-of-flight spectra) have been simulated from first principles with the sole information on the instrumental parameters and taking into account the energy spread. A general good agreement with the experimental data has been found, thereby demonstrating the adequacy of the QCT method and the quality of the PES to describe the dynamics of this reaction at the level of resolution of the existing crossed beam experiments. Some features which are apparent in the differential cross sections have also been analysed in terms of the dynamics of the reaction and its evolution with the collision energy.

  8. Raman analysis of SF 6 molecular beams excited by a cw CO 2 laser

    NASA Astrophysics Data System (ADS)

    Luijks, G.; Timmerman, J.; Stolte, S.; Reuss, J.

    1983-06-01

    In a molecular beam the effects of vibrational pumping of SF 6 (ν 3 = 948 cm -1) are studied, using a line-tunable cw CO 2 laser. Intracavity spontaneous Raman scattering is used for analysis. For excitation in the collision regime ( xE/ D ≤ 1), a thermal redistribution of the ν 3 excitation over all vibrational modes is found, together with an average absorption up to six photons per molecule. The infrared absorption profile shows a red-shift of 6 cm -1. For excitation in the relatively rare collision regime ( xE/ D ⩾ 4), a structured non-thermal ν 1 Raman spectrum is observed, especially in the case of seeded molecular beams (10% in He). The observed hot-band peaks can be explained in terms of single-photon absorptions and collision-induced near-resonant V-V energy transfer, leading to single, double and triple excitations of the ν 3 mode. The value of Trot in the beam is found to influence sensitively the non-resonant energy-transfer rate [e.g. hν 3(948 cm -1)+Δ Erot → h(ν 4 + ν 6)(962 cm -1) relative to the near-resonant transfer rate ( hν 3 + hν 3 → 2 hν 3 + 3.5 cm -1)].

  9. Free vibration analysis of microtubules based on the molecular mechanics and continuum beam theory.

    PubMed

    Zhang, Jin; Wang, Chengyuan

    2016-10-01

    A molecular structural mechanics (MSM) method has been implemented to investigate the free vibration of microtubules (MTs). The emphasis is placed on the effects of the configuration and the imperfect boundaries of MTs. It is shown that the influence of protofilament number on the fundamental frequency is strong, while the effect of helix-start number is almost negligible. The fundamental frequency is also found to decrease as the number of the blocked filaments at boundaries decreases. Subsequently, the Euler-Bernoulli beam theory is employed to reveal the physics behind the simulation results. Fitting the Euler-Bernoulli beam into the MSM data leads to an explicit formula for the fundamental frequency of MTs with various configurations and identifies a possible correlation between the imperfect boundary conditions and the length-dependent bending stiffness of MTs reported in experiments. PMID:26564172

  10. Energy spreading and angular distribution of a beam of electrons in molecular hydrogen

    NASA Technical Reports Server (NTRS)

    Heaps, M. G.; Green, A. E. S.

    1975-01-01

    A Monte Carlo approach is used to obtain the energy spreading and angular distribution of initially monoenergetic and monodirectional beams of electron incident on a gas of molecular hydrogen. Several beams of primary electrons and the resultant secondaries are degraded in a step-by-step procedure which utilizes a detailed set of cross sections, together with reasonable approximations for the creation of secondary electrons. Particular attention is paid to the initial angular distribution of secondary electrons. An analytic function which characterizes current experimental differential cross-section data is used to provide realistic inputs into our calculations. The results for energy distribution as a function of distance and angular distribution at selected energies and distances are illustrated.

  11. Free vibration analysis of microtubules based on the molecular mechanics and continuum beam theory.

    PubMed

    Zhang, Jin; Wang, Chengyuan

    2016-10-01

    A molecular structural mechanics (MSM) method has been implemented to investigate the free vibration of microtubules (MTs). The emphasis is placed on the effects of the configuration and the imperfect boundaries of MTs. It is shown that the influence of protofilament number on the fundamental frequency is strong, while the effect of helix-start number is almost negligible. The fundamental frequency is also found to decrease as the number of the blocked filaments at boundaries decreases. Subsequently, the Euler-Bernoulli beam theory is employed to reveal the physics behind the simulation results. Fitting the Euler-Bernoulli beam into the MSM data leads to an explicit formula for the fundamental frequency of MTs with various configurations and identifies a possible correlation between the imperfect boundary conditions and the length-dependent bending stiffness of MTs reported in experiments.

  12. Three-dimensional ordering of cold ion beams in a storage ring: A molecular-dynamics simulation study

    SciTech Connect

    Yuri, Yosuke

    2015-06-29

    Three-dimensional (3D) ordering of a charged-particle beams circulating in a storage ring is systematically studied with a molecular-dynamics simulation code. An ion beam can exhibit a 3D ordered configuration at ultralow temperature as a result of powerful 3D laser cooling. Various unique characteristics of the ordered beams, different from those of crystalline beams, are revealed in detail, such as the single-particle motion in the transverse and longitudinal directions, and the dependence of the tune depression and the Coulomb coupling constant on the operating points.

  13. Molecular beam mass spectrometry with tunable vacuum ultraviolet (VUV) synchrotron radiation

    SciTech Connect

    Golan, Amir; Ahmed, Musahid

    2012-01-01

    Tunable soft ionization coupled to mass spectroscopy is a powerful method to investigate isolated molecules, complexes and clusters and their spectroscopy and dynamics.[1-4] Fundamental studies of photoionization processes of biomolecules provide information about electronic structure of these systems. Furthermore determinations of ionization energies and other properties of biomolecules in the gas phase are not trivial, and these experiments provide a platform to generate these data. We have developed a thermal vaporization technique coupled with supersonic molecular beams that provides a gentle way to transport these species into the gas phase. Judicious combination of source gas and temperature allows for formation of dimers and higher clusters of the DNA bases. The focus of this particular work is on the effects of non-covalent interactions, i.e., hydrogen bonding, stacking, and electrostatic interactions, on the ionization energies and proton transfer of individual biomolecules, their complexes and upon micro-hydration by water.[1, 5-9] We have performed experimental and theoretical characterization of the photoionization dynamics of gas-phase uracil and 1,3-methyluracil dimers using molecular beams coupled with synchrotron radiation at the Chemical Dynamics Beamline[10] located at the Advanced Light Source and the experimental details are visualized here. This allowed us to observe the proton transfer in 1,3-dimethyluracil dimers, a system with pi stacking geometry and with no hydrogen bonds[1]. Molecular beams provide a very convenient and efficient way to isolate the sample of interest from environmental perturbations which in return allows accurate comparison with electronic structure calculations[11, 12]. By tuning the photon energy from the synchrotron, a photoionization efficiency (PIE) curve can be plotted which informs us about the cationic electronic states. These values can then be compared to theoretical models and calculations and in turn, explain

  14. Near-field infrared imaging of molecular changes in cholesteryl oleate by free electron laser infrared ablation

    NASA Astrophysics Data System (ADS)

    Masaki, Tatsuhiro; Goto, Kazuya; Inouye, Yasushi; Kawata, Satoshi

    2004-01-01

    We have applied infrared near-field scanning optical microscopy (IR-NSOM) to enable evaluation of detailed molecular changes in cholesteryl oleate, a primary cause of arteriosclerosis. In our IR-NSOM, a wide wavelength range of 2.9-6.7 μm is achieved by use of an optical parametric amplifier and an apertured cantilever. IR irradiation from a free-electron laser (FEL) tuned to a 5.75 μm wavelength induced molecular structural changes and caused cholesteryl oleate to decompose to cholesterol and fatty acids in the FEL irradiated areas. The IR-NSOM images at two different wavelengths, 5.75 and 5.3 μm, with a 2 μm apertured cantilever probe successfully identified areas of molecular change in cholesteryl oleate beyond the diffraction limit of IR microspectroscopy. In-depth molecular structure changes were also evaluated by the IR-NSOM and we demonstrated that the FEL irradiation induced subsurface molecular structure changes throughout cholesteryl oleate in the irradiated areas.

  15. Crystallographic dependence of photocatalytic activity of WO3 thin films prepared by molecular beam epitaxy.

    PubMed

    Li, Guoqiang; Varga, Tamas; Yan, Pengfei; Wang, Zhiguo; Wang, Chongmin; Chambers, Scott A; Du, Yingge

    2015-06-21

    We investigated the impact of crystallographic orientation on the photocatalytic activity of single crystalline WO3 thin films prepared by molecular beam epitaxy on the photodegradation of rhodamine B (RhB). A clear effect is observed, with (111) being the most reactive surface, followed by (110) and (001). Photoreactivity is directly correlated with the surface free energy determined by density functional theory calculations. The RhB photodegradation mechanism is found to involve hydroxyl radicals in solution formed from photo-generated holes and differs from previous studies performed on nanoparticles and composites.

  16. Pulsed Molecular Beams For Growth Of InAs On GaAs

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J.

    1989-01-01

    Pauses for annealing reduce number of defects. Deposition process that includes pulsed molecular beams produces high-quality epitaxial layers of indium arsenide on gallium arsenide substrates. Layers made as much as 30 atoms thick without introducing excessive numbers of dislocations, despite 7.4-percent mismatch between InAs and GaAs crystal lattices. Layers offer superior electrical properties in such devices as optically addressed light modulators, infrared sensors, semiconductor lasers, and high-electron-mobility transistors. Technique applicable to other epitaxial systems in which lattices highly mismatched.

  17. Silicon sheet with molecular beam epitaxy for high efficiency solar cells

    NASA Technical Reports Server (NTRS)

    Allen, F. G.

    1983-01-01

    The capabilities of the new technique of Molecular Beam Epitaxy (MBE) are applied to the growth of high efficiency silicon solar cells. Because MBE can provide well controlled doping profiles of any desired arbitrary design, including doping profiles of such complexity as built-in surface fields or tandem junction cells, it would appear to be the ideal method for development of high efficiency solar cells. It was proposed that UCLA grow and characterize silicon films and p-n junctions of MBE to determine whether the high crystal quality needed for solar cells could be achieved.

  18. A molecular beam investigation of the oxidation of CO on Pt/9/111/x/100//

    NASA Technical Reports Server (NTRS)

    Fair, J. A.; Madix, R. J.

    1980-01-01

    The CO oxidation on Pt/9(111)x(100)/ was studied by molecular beam relaxation spectroscopy (MBRS). The reaction proceeded via the reaction of adsorbed CO and adsorbed oxygen. No evidence for direct reactive collisions between gaseous CO and adsorbed atomic oxygen was seen. The second order rate constant was measured by linearizing the reaction system to be 10 to the -7th exp/-(9700 kcal/mole)RT/ per sq cm s. The relatively low pre-exponential factor was explained by transition state theory on the basis of a high partition function for adsorbed carbon monoxide obtained previously from studies of CO desorption on this surface.

  19. Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping

    NASA Technical Reports Server (NTRS)

    Bhattacharya, P. K.; Dhar, S.; Berger, P.; Juang, F.-Y.

    1986-01-01

    A study has been made of the effects of adding small amounts of In (0.2-1.2 pct) to GaAs grown by molecular beam epitaxy. The density of four electron traps decreases in concentration by an order of magnitude, and the peak intensities of prominent emissions in the excitonic spectra are reduced with increase in In content. Based on the higher surface migration rate of In, compared to Ga, at the growth temperatures it is apparent that the traps and the excitonic transitions are related to point defects. This agrees with earlier observations by Briones and Collins (1982) and Skromme et al. (1985).

  20. Site-controlled Ag nanocrystals grown by molecular beam epitaxy-Towards plasmonic integration technology

    SciTech Connect

    Urbanczyk, Adam; Noetzel, Richard

    2012-12-15

    We demonstrate site-controlled growth of epitaxial Ag nanocrystals on patterned GaAs substrates by molecular beam epitaxy with high degree of long-range uniformity. The alignment is based on lithographically defined holes in which position controlled InAs quantum dots are grown. The Ag nanocrystals self-align preferentially on top of the InAs quantum dots. No such ordering is observed in the absence of InAs quantum dots, proving that the ordering is strain-driven. The presented technique facilitates the placement of active plasmonic nanostructures at arbitrarily defined positions enabling their integration into complex devices and plasmonic circuits.

  1. Gallium Arsenide Layers Grown by Molecular Beam Epitaxy on Single Crystalline Germanium Islands on Insulator

    NASA Astrophysics Data System (ADS)

    Takai, Mikio; Tanigawa, Takaho; Minamisono, Tadanori; Gamo, Kenji; Namba, Susumu

    1984-05-01

    Gallium arsenide (GaAs) layers have successfully been grown by molecular beam epitaxy on single crystalline germanium (Ge) islands, recrystallized by zone melting with SiO2 capping layers, on thermally-oxidized Si-wafers. The GaAs layers, grown on the single crystalline Ge islands, show smooth surfaces without any grain-boundaries, while those, grown on the Ge islands with grain-boundaries and on the SiO2, have grain-boundaries. The GaAs layers on the single crystalline Ge islands emit photoluminescence, the intensity of which is almost comparable to that of GaAs layers on bulk Ge crystals.

  2. Supersonic molecular beam injection effects on tokamak plasma applied non-axisymmetric magnetic perturbation

    NASA Astrophysics Data System (ADS)

    Han, Hyunsun; In, Y.; Jeon, Y. M.; Lee, H. Y.; Hahn, S. H.; Lee, K. D.; Nam, Y. U.; Yoon, S. W.

    2016-08-01

    The change of tokamak plasma behavior by supersonic molecular beam injection (SMBI) was investigated by applying a three-dimensional magnetic perturbation that could suppress edge localized modes (ELMs). From the time trace of decreasing electron temperature and with increasing plasma density keeping the total confined energy constant, the SMBI seems to act as a cold pulse on the plasma. However, the ELM behaviors were changed drastically (i.e., the symptom of ELM suppression has disappeared). The plasma collisionality in the edge-pedestal region could play a role in the change of the ELM behaviors.

  3. Graphitic carbon growth on crystalline and amorphous oxide substrates using molecular beam epitaxy

    PubMed Central

    2011-01-01

    We report graphitic carbon growth on crystalline and amorphous oxide substrates by using carbon molecular beam epitaxy. The films are characterized by Raman spectroscopy and X-ray photoelectron spectroscopy. The formations of nanocrystalline graphite are observed on silicon dioxide and glass, while mainly sp2 amorphous carbons are formed on strontium titanate and yttria-stabilized zirconia. Interestingly, flat carbon layers with high degree of graphitization are formed even on amorphous oxides. Our results provide a progress toward direct graphene growth on oxide materials. PACS: 81.05.uf; 81.15.Hi; 78.30.Ly. PMID:22029707

  4. Molecular-Beam Epitaxy Of CrSi2 on Si(111)

    NASA Technical Reports Server (NTRS)

    Fathauer, Robert W.; Grunthaner, Paula J.; Lin, True-Lon; Jamieson, David N.; Mazur, Jurek H.

    1989-01-01

    Crystalline layers grown in commercial apparatus. Experiments show CrSi2 grown on (111) face of single-crystal Si substrate by molecular-beam epitaxy. Epitaxial CrSi2 produced thus far not in desired single-crystal form. Because CrSi2 semiconductor with band gap of 0.3 eV, experimental process potential for monolitic integration of microelectronic devices based on CrSi2 (e.g., infrared detectors) with signal-processing circuitry based on Si.

  5. Characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Lo, Ikai; Pang, Wen-Yuan; Hsu, Yu-Chi; Hsieh, Chia-Ho; Shih, Cheng-Hung; Chou, Mitch M. C.; Chen, Wen-Yen; Hsu, Tzu-Min; Hsu, Gary Z. L.

    2013-06-15

    The characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy on LiAlO{sub 2} substrate was studied by cathodoluminescence and photoluminescence measurements. We demonstrated that the cathodoluminescence from oblique semi-polar surfaces of mushroom-shaped GaN was much brighter than that from top polar surface due to the reduction of polarization field on the oblique semi-polar surfaces. It implies that the oblique semi-polar surface is superior for the light-emitting surface of wurtzite nano-devices.

  6. Reaction Mechanism of Oxygen Atoms with Unsaturated Hydrocarbons by the Crossed-Molecular-Beams Method

    DOE R&D Accomplishments Database

    Buss, R. J.; Baseman, R. J.; Guozhong, H.; Lee, Y. T.

    1982-04-01

    From a series of studies of the reaction of oxygen atoms with unsaturated hydrocarbons using the crossed molecular beam method, the dominant reaction mechanisms were found to be the simple substitution reactions with oxygen atoms replacing H, Cl, Br atom or alkyl groups. Complication due to secondary reaction was avoided by carrying out experiments under single collisions and observing primary products directly. Primary products were identified by measuring the angular and velocity distributions of products at all the mass numbers which could be detected by the mass spectrometer, and from comparison of these distributions, applying the requirement of energy and momentum conservation.

  7. Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds

    SciTech Connect

    Jungwirth, T.; Novak, V.; Cukr, M.; Zemek, J.; Marti, X.; Horodyska, P.; Nemec, P.; Holy, V.; Maca, F.; Shick, A. B.; Masek, J.; Kuzel, P.; Nemec, I.; Gallagher, B. L.; Campion, R. P.; Foxon, C. T.; Wunderlich, J.

    2011-01-15

    Our ab initio theory calculations predict a semiconducting band structure of I-Mn-V compounds. We demonstrate on LiMnAs that high-quality materials with group-I alkali metals in the crystal structure can be grown by molecular beam epitaxy. Optical measurements on the LiMnAs epilayers are consistent with the theoretical electronic structure. Our calculations also reproduce earlier reports of high antiferromagnetic ordering temperature and predict large, spin-orbit-coupling-induced magnetic anisotropy effects. We propose a strategy for employing antiferromagnetic semiconductors in high-temperature semiconductor spintronics.

  8. Growth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam epitaxy

    SciTech Connect

    Cai, Y.; Wong, T. L.; Chan, S. K.; Sou, I. K.; Wang, N.; Su, D. S.

    2008-12-08

    Ultrathin ZnSe nanowires grown by Au-catalyzed molecular-beam epitaxy show an interesting growth behavior of diameter dependence of growth rates. The smaller the nanowire diameter, the faster is its growth rate. This growth behavior is totally different from that of the nanowires with diameters greater than 60 nm and cannot be interpreted by the classical theories of the vapor-liquid-solid mechanism. For the Au-catalyzed nanowire growth at low temperatures, we found that the surface and interface incorporation and diffusion of the source atoms at the nanowire tips controlled the growth of ultrathin ZnSe nanowires.

  9. Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy

    SciTech Connect

    Zhang, Zhi; Xu, Hong-Yi; Guo, Ya-Nan; Liao, Zhi-Ming; Lu, Zhen-Yu; Chen, Ping-Ping; Shi, Sui-Xing; Lu, Wei; Zou, Jin

    2013-08-12

    In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.

  10. Note: A versatile mass spectrometer chamber for molecular beam and temperature programmed desorption experiments.

    PubMed

    Tonks, James P; Galloway, Ewan C; King, Martin O; Kerherve, Gwilherm; Watts, John F

    2016-08-01

    A dual purpose mass spectrometer chamber capable of performing molecular beam scattering (MBS) and temperature programmed desorption (TPD) is detailed. Two simple features of this design allow it to perform these techniques. First, the diameter of entrance aperture to the mass spectrometer can be varied to maximize signal for TPD or to maximize angular resolution for MBS. Second, the mass spectrometer chamber can be radially translated so that it can be positioned close to the sample to maximize signal or far from the sample to maximize angular resolution. The performance of this system is described and compares well with systems designed for only one of these techniques.

  11. Perspective: Extremely fine tuning of doping enabled by combinatorial molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wu, J.; Božović, I.

    2015-06-01

    Chemical doping provides an effective method to control the electric properties of complex oxides. However, the state-of-art accuracy in controlling doping is limited to about 1%. This hampers elucidation of the precise doping dependences of physical properties and phenomena of interest, such as quantum phase transitions. Using the combinatorial molecular beam epitaxy, we improve the accuracy in tuning the doping level by two orders of magnitude. We illustrate this novel method by two examples: a systematic investigation of the doping dependence of interface superconductivity, and a study of the competing ground states in the vicinity of the insulator-to-superconductor transition.

  12. Zinc-blende CrAs/GaAs multilayers grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Akinaga, H.; Mizuguchi, M.

    2004-12-01

    The epitaxial growth of zinc-blende CrAs/GaAs multilayers has been achieved by using the molecular-beam epitaxy method. The crystallographic quality was evaluated by reflection high-energy electron diffraction (RHEED) and cross-sectional transmission electron microscopy (TEM). The increase of the substrate temperature during growth up to 300 °C brings the RHEED pattern to a streak, in contrast to the case at 200 °C. TEM images show the atomically flat surface and interface of the multilayer.

  13. Molecular beam epitaxy growth and optical properties of single crystal Zn3N2 films

    NASA Astrophysics Data System (ADS)

    Wu, Peng; Tiedje, T.; Alimohammadi, H.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Wang, Cong

    2016-10-01

    Single crystal Zn3N2 films with (100) orientation have been grown by plasma-assisted molecular beam epitaxy on MgO and A-plane sapphire substrates with in situ optical reflectance monitoring of the growth. The optical bandgap was found to be 1.25-1.28 eV and an electron Hall mobility as high as 395 cm2 V-1 s-1 was measured. The films were n-type with carrier concentrations in the 1018-1019 cm-3 range.

  14. Lutetium-doped EuO films grown by molecular-beam epitaxy

    SciTech Connect

    Melville, A.; Heeg, T.; Mairoser, T.; Schmehl, A.; Shai, D. E.; Monkman, E. J.; Harter, J. W.; Hollaender, B.; Schubert, J.; Shen, K. M.; Mannhart, J.; Schlom, D. G.

    2012-05-28

    The effect of lutetium doping on the structural, electronic, and magnetic properties of epitaxial EuO thin films grown by reactive molecular-beam epitaxy is experimentally investigated. The behavior of Lu-doped EuO is contrasted with doping by lanthanum and gadolinium. All three dopants are found to behave similarly despite differences in electronic configuration and ionic size. Andreev reflection measurements on Lu-doped EuO reveal a spin-polarization of 96% in the conduction band, despite non-magnetic carriers introduced by 5% lutetium doping.

  15. Note: A versatile mass spectrometer chamber for molecular beam and temperature programmed desorption experiments

    NASA Astrophysics Data System (ADS)

    Tonks, James P.; Galloway, Ewan C.; King, Martin O.; Kerherve, Gwilherm; Watts, John F.

    2016-08-01

    A dual purpose mass spectrometer chamber capable of performing molecular beam scattering (MBS) and temperature programmed desorption (TPD) is detailed. Two simple features of this design allow it to perform these techniques. First, the diameter of entrance aperture to the mass spectrometer can be varied to maximize signal for TPD or to maximize angular resolution for MBS. Second, the mass spectrometer chamber can be radially translated so that it can be positioned close to the sample to maximize signal or far from the sample to maximize angular resolution. The performance of this system is described and compares well with systems designed for only one of these techniques.

  16. A laser and molecular beam mass spectrometer study of low-pressure dimethyl ether flames

    SciTech Connect

    Andrew McIlroy; Toby D. Hain; Hope A. Michelsen; Terrill A. Cool

    2000-12-15

    The oxidation of dimethyl ether (DME) is studied in low-pressure flames using new molecular beam mass spectrometer and laser diagnostics. Two 30.0-Torr, premixed DME/oxygen/argon flames are investigated with stoichiometries of 0.98 and 1.20. The height above burner profiles of nine stable species and two radicals are measured. These results are compared to the detailed chemical reaction mechanism of Curran and coworkers. Generally good agreement is found between the model and data. The largest discrepancies are found for the methyl radical profiles where the model predicts qualitatively different trends in the methyl concentration with stoichiometry than observed in the experiment.

  17. Note: A versatile mass spectrometer chamber for molecular beam and temperature programmed desorption experiments.

    PubMed

    Tonks, James P; Galloway, Ewan C; King, Martin O; Kerherve, Gwilherm; Watts, John F

    2016-08-01

    A dual purpose mass spectrometer chamber capable of performing molecular beam scattering (MBS) and temperature programmed desorption (TPD) is detailed. Two simple features of this design allow it to perform these techniques. First, the diameter of entrance aperture to the mass spectrometer can be varied to maximize signal for TPD or to maximize angular resolution for MBS. Second, the mass spectrometer chamber can be radially translated so that it can be positioned close to the sample to maximize signal or far from the sample to maximize angular resolution. The performance of this system is described and compares well with systems designed for only one of these techniques. PMID:27587173

  18. Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Zhang, Zhi; Lu, Zhen-Yu; Chen, Ping-Ping; Xu, Hong-Yi; Guo, Ya-Nan; Liao, Zhi-Ming; Shi, Sui-Xing; Lu, Wei; Zou, Jin

    2013-08-01

    In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.

  19. Hydrolytic degradation of electron beam irradiated high molecular weight and non-irradiated moderate molecular weight PLLA.

    PubMed

    Loo, Say Chye Joachim; Tan, Hui Tong; Ooi, Chui Ping; Boey, Yin Chiang Freddy

    2006-05-01

    The purpose of this study is to examine the hydrolytic degradation of electron beam irradiated ring-opening polymerized (ROP) poly(l-lactide) (PLLA-ir) and non-irradiated melt polycondensation polymerized poly(l-lactic acid) (PLLA-pc). It was observed that irradiation increases the hydrolytic degradation rate constant for ROP PLLA. This was due to a more hydrophilic PLLA-ir, as a result of irradiation. The degradation rate constants (k) of PLLA-ir samples were also found to be similar, regardless of the radiation dose, and an empirically formulated equation relating hydrolytic degradation time span to radiation dose was derived. The k value for PLLA-pc was observed to be lower than that for PLLA-ir, though the latter had a higher molecular weight. This was due to the difference in degradation mechanism, in which PLLA-ir undergoes end group scission, through a back- biting mechanism, during hydrolysis and thus a faster hydrolysis rate. Electron beam irradiation, though accelerates the degradation of PLLA, has been shown to be useful in accurately controlling the hydrolytic time span of PLLA. This method of controlling the hydrolytic degradation time was by far an easier task than through melt polycondensation polymerization. This would allow PLLA to be used for drug delivery purposes or as a temporary implant that requires a moderate time span (3-6 months). PMID:16701888

  20. Measuring the Density of a Molecular Cluster Injector via Visible Emission from an Electron Beam

    SciTech Connect

    Lundberg, D. P.; Kaita, R.; Majeski, R. M.; Stotler, D. P.

    2010-06-28

    A method to measure the density distribution of a dense hydrogen gas jet is pre- sented. A Mach 5.5 nozzle is cooled to 80K to form a flow capable of molecular cluster formation. A 250V, 10mA electron beam collides with the jet and produces Hα emission that is viewed by a fast camera. The high density of the jet, several 1016cm-3, results in substantial electron depletion, which attenuates the Hα emission. The attenuated emission measurement, combined with a simplified electron-molecule collision model, allows us to determine the molecular density profile via a simple iterative calculation.

  1. Pulsed HF laser ablation of dentin

    NASA Astrophysics Data System (ADS)

    Papagiakoumou, Eirini I.; Papadopoulos, Dimitris N.; Makropoulou, Mersini I.; Khabbaz, Maruan G.; Serafetinides, Alexander A.

    2005-03-01

    The interaction of a TEA (Transversally Excited Atmospheric pressure) corona preionized oscillator double amplifier HF (hydrogen fluoride) laser beam with dentin tissue is reported. Pulses of 39 ns in the wavelength range of 2.65-3.35 μm and output energies in the range of 10-45 mJ, in a predominantly TEM00 beam were used to interact with dentin tissue. Ablation experiments were conducted with the laser beam directly focused on the tissue. Several samples of freshly extracted human teeth were used, cut longitudinally in facets of about 1mm thick and stored in phosphate buffered saline after being cleaned from the soft tissue remains. The experimental data (ablation thresholds, ablation rates) are discussed with respect to the ablation mechanism(s). Adequate tissue removal was observed and the ablation behavior was, in the greates part of the available fluences, almost linear. From the microscopic examination of teh samples, in a scanning electron microscope (SEM), the irradiated surfaces displayed oval craters (reflecting the laser beam shape) with absence of any melting or carbonization zone. It is suggested that the specific laser removes hard tissue by a combined photothermal and plasma mediated ablation mechanism, leaving a surface free from thermal damage and with a well-shaped crater.

  2. Optical modeling of laser ablated microstructures

    NASA Astrophysics Data System (ADS)

    Gower, M. C.; Davies, E.; Holmes, A. S.

    2012-11-01

    From only an a priori knowledge of the optical parameters of a laser beam, the delivery system together with a substrate's material properties, a ray-tracing model capable of predicting the 3-D topology of micro/nanostructures machined by pulsed laser ablation has been developed. The model includes secondary illumination effects produced by the microstructure created by successive pulses (wall reflections, refraction, wave guiding, shadowing, etc.) as well as the complete optical properties of the beam delivery system. We have used material ablation by pulsed excimer lasers and associated beam delivery systems to demonstrate some of the capabilities of the model. Good agreement is obtained between computations and experimental results in terms of the predicted ablation depth per pulse and the wall taper angle of channels and holes. The model can predict ablated profiles of holes and indicate the most efficient drilling strategy in terms of material removal rates. The model also shows diffraction effects are not required to explain the tapering vertical walls observed when ablating microstructures. Finally, the model has been used to demonstrate aberrations in an optical imaging system limiting the creation of submicron features in an ablated microstructure. Provided photons are absorbed linearly in a substrate according to Beer's law with negligible thermal diffusion effects, the model is equally applicable to using other types of pulsed laser sources and systems with imaged or focused beams.

  3. Electron beam pumped III-V nitride vertical cavity surface emitting lasers grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Ng, Hock Min

    The design and fabrication by molecular beam epitaxy of a prototype vertical cavity laser based on the III-V nitrides were investigated in this work. The bottom mirror of the laser consists of distributed Bragg reflectors (DBRs) based on quarterwave AlN (or AlxGa1-xN) and GaN layers. Such DBRs were designed for maximum reflectivity in the spectral region from 390--600 nm. The epitaxial growth of these two binaries on each other revealed that while AlN grows on GaN in a two-dimensional mode (Frank-van der Merwe mode), GaN grows on AlN in a three-dimensional mode (Stranski-Krastanov mode). In spite of that, DBRs with peak reflectance up to 99% and bandwidths of 45nm were fabricated. The measured reflectance spectra were compared with simulations using the transmission matrix method. The mechanical stability of these DBR structures due to non-uniform distribution of strain arising from lattice or thermal mismatch of the various components were also addressed. The active region of the laser consists of InGaN/GaN multiple quantum wells (MQWs). The existence of up to the third order diffraction peaks in the x-ray diffraction spectra suggests that the interfaces between InGaN and GaN are sharp with little interdiffusion at the growth temperature. The photoluminescence and cathodoluminescence spectra were analyzed to determine the optical quality of the MQWs. The best MQWs were shown to have a single emission peak at 397nm with full width half maximum (FWHM) of 11nm. Cathodoluminescence studies showed that there are spatially localized areas of intense light emission. The complete device was formed on (0001) sapphire substrates using the previously described DBRs as bottom mirrors and the MQWs as the active region. The top mirror of the device consists of metallic silver. The device was pumped by an electron beam from the top mirror side and the light output was collected from the sapphire side. Measurements at 100K showed narrowing of the linewidth with increasing pump

  4. Low molecular weight heparin in patients undergoing free tissue transfer following head and neck ablative surgery: review of efficacy and associated complications.

    PubMed

    Eley, Karen A; Parker, Rachel J; Watt-Smith, Stephen R

    2013-10-01

    Most microsurgeons report the use of anticoagulants in their routine practice. Anti-Xa concentrations are preferentially used to monitor treatment with low molecular weight heparin (LMWH). The aim of this retrospective study was to measure the therapeutic response to standard dosing with LMWH (using anti-Xa) in patients after ablative and reconstructive surgery for head and neck cancer, and to review the associated risk of bleeding. We retrospectively reviewed 153 patients who had undergone resection of primary or recurrent tumours of the head and neck with free flap reconstruction. In total, 173 free flap procedures were completed. Medical records were reviewed to find the anticoagulation regimen used, anti-Xa result, patients' weight, and any associated complications. Fourteen patients returned to theatre because of bleeding; of these no cause was identified in 6 and a haematoma was evacuated. The distribution of unexplained haematoma was similar for all dose regimens of dalteparin. Anti-Xa results were available in 47 cases, and of these, 22 (47%) were within the prophylactic range (0.2 IU/ml or more). Our results highlight the high incidence of inadequate response to standard prophylactic doses of LMWH in patients with head and neck cancer. Increasing the dose of dalteparin does not seem to increase the risk of bleeding or formation of a haematoma. These findings may be transferable to other surgical specialties.

  5. An ultra-compact, high-throughput molecular beam epitaxy growth system

    SciTech Connect

    Baker, A. A.; Hesjedal, T.; Braun, W. E-mail: fischer@createc.de; Rembold, S.; Fischer, A. E-mail: fischer@createc.de; Gassler, G.

    2015-04-15

    We present a miniaturized molecular beam epitaxy (miniMBE) system with an outer diameter of 206 mm, optimized for flexible and high-throughput operation. The three-chamber system, used here for oxide growth, consists of a sample loading chamber, a storage chamber, and a growth chamber. The growth chamber is equipped with eight identical effusion cell ports with linear shutters, one larger port for either a multi-pocket electron beam evaporator or an oxygen plasma source, an integrated cryoshroud, retractable beam-flux monitor or quartz-crystal microbalance, reflection high energy electron diffraction, substrate manipulator, main shutter, and quadrupole mass spectrometer. The system can be combined with ultrahigh vacuum (UHV) end stations on synchrotron and neutron beamlines, or equivalently with other complex surface analysis systems, including low-temperature scanning probe microscopy systems. Substrate handling is compatible with most UHV surface characterization systems, as the miniMBE can accommodate standard surface science sample holders. We introduce the design of the system, and its specific capabilities and operational parameters, and we demonstrate the epitaxial thin film growth of magnetoelectric Cr{sub 2}O{sub 3} on c-plane sapphire and ferrimagnetic Fe{sub 3}O{sub 4} on MgO (001)

  6. An ultra-compact, high-throughput molecular beam epitaxy growth system.

    PubMed

    Baker, A A; Braun, W; Gassler, G; Rembold, S; Fischer, A; Hesjedal, T

    2015-04-01

    We present a miniaturized molecular beam epitaxy (miniMBE) system with an outer diameter of 206 mm, optimized for flexible and high-throughput operation. The three-chamber system, used here for oxide growth, consists of a sample loading chamber, a storage chamber, and a growth chamber. The growth chamber is equipped with eight identical effusion cell ports with linear shutters, one larger port for either a multi-pocket electron beam evaporator or an oxygen plasma source, an integrated cryoshroud, retractable beam-flux monitor or quartz-crystal microbalance, reflection high energy electron diffraction, substrate manipulator, main shutter, and quadrupole mass spectrometer. The system can be combined with ultrahigh vacuum (UHV) end stations on synchrotron and neutron beamlines, or equivalently with other complex surface analysis systems, including low-temperature scanning probe microscopy systems. Substrate handling is compatible with most UHV surface characterization systems, as the miniMBE can accommodate standard surface science sample holders. We introduce the design of the system, and its specific capabilities and operational parameters, and we demonstrate the epitaxial thin film growth of magnetoelectric Cr2O3 on c-plane sapphire and ferrimagnetic Fe3O4 on MgO (001).

  7. An ultra-compact, high-throughput molecular beam epitaxy growth system

    NASA Astrophysics Data System (ADS)

    Baker, A. A.; Braun, W.; Gassler, G.; Rembold, S.; Fischer, A.; Hesjedal, T.

    2015-04-01

    We present a miniaturized molecular beam epitaxy (miniMBE) system with an outer diameter of 206 mm, optimized for flexible and high-throughput operation. The three-chamber system, used here for oxide growth, consists of a sample loading chamber, a storage chamber, and a growth chamber. The growth chamber is equipped with eight identical effusion cell ports with linear shutters, one larger port for either a multi-pocket electron beam evaporator or an oxygen plasma source, an integrated cryoshroud, retractable beam-flux monitor or quartz-crystal microbalance, reflection high energy electron diffraction, substrate manipulator, main shutter, and quadrupole mass spectrometer. The system can be combined with ultrahigh vacuum (UHV) end stations on synchrotron and neutron beamlines, or equivalently with other complex surface analysis systems, including low-temperature scanning probe microscopy systems. Substrate handling is compatible with most UHV surface characterization systems, as the miniMBE can accommodate standard surface science sample holders. We introduce the design of the system, and its specific capabilities and operational parameters, and we demonstrate the epitaxial thin film growth of magnetoelectric Cr2O3 on c-plane sapphire and ferrimagnetic Fe3O4 on MgO (001).

  8. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    SciTech Connect

    Lee, J. H.; Tung, I. C.; Chang, S. -H.; Bhattacharya, A.; Fong, D. D.; Freeland, J. W.; Hong, Hawoong

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  9. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy.

    PubMed

    Lee, J H; Tung, I C; Chang, S-H; Bhattacharya, A; Fong, D D; Freeland, J W; Hong, Hawoong

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  10. Ablative Thermal Protection: An Overview

    NASA Technical Reports Server (NTRS)

    Laub, Bernie

    2003-01-01

    Contents include the following: Why ablative thermal protections - TPS. Ablative TPS chronology: strategic reentry systems, solid rocket motor nozzles, space (manned missions and planetary entry probes). Ablation mechanisms. Ablation material testing. Ablative material testing.

  11. A Simulation of Laser Ablation During the Laser Pulse

    NASA Astrophysics Data System (ADS)

    Suzuki, Motoyuki; Ventzek, Peter L. G.; Sakai, Y.; Date, H.; Tagashira, H.; Kitamori, K.

    1996-10-01

    Charge damage considerations in plasma assisted etching are prompting the development of neutral beam sources. Already, anisotropic etching of has been demonstrated by neutral beams generated by exhausting heated ecthing gases into vacuum via a nozzle. Laser ablation of condensed etching gases may also be an attractive alternative means of generating neutral beams. Laser ablation coupled with electrical breakdown of the ablation plume may afford some degree of control over a neutral beam's dissociation fraction and ion content. Results from a Monte Carlo simulation of the laser ablation plume as it expands into vacuum at time-scales during the laser pulse will be presented. The model includes both heavy particle interactions and photochemistry. In particular, the influence of the initial particle angular distribution on the beam spread will be demonstrated as will the relationship between laser beam energy and initial ionization and dissociation fraction.

  12. Scanning photorefractive keratectomy at 213 nm: PMMA ablations

    NASA Astrophysics Data System (ADS)

    Manns, Fabrice; Rol, Pascal O.; Wosnitza, Martin; Maine, Patrick; Parel, Jean-Marie A.

    1999-06-01

    Purpose: In scanning photorefractive keratectomy, the corneal surface is reshaped by laser ablation with a scanning beam for the correction of myopia or astigmatism. A precise knowledge of the volume of corneal tissue removed by each laser pulse is necessary to be able to develop accurate ablation algorithms for scanning photorefractive keratectomy. The purpose of this study was to measure the ablation per pulse created on PMMA surfaces with a Q-switched frequency-quintupled Nd:YAG laser emitting at 213 nm. Methods: A frequency-quintupled Nd:YAG laser emitting at 213 nm with a pulse duration of 5 ns and a pulse energy of 1.2 to 1.5 mJ was used. The laser beam was focused on the surface of PMMA blocks and ablation craters were produced with 10, 50 and 100 pulses. The shape of the ablation craters was measured with an optical profilometer and compared with the beam profile measured with a laser beam diagnostic system. Results: The beam intensity distribution in the near-field consisted of two quasi-Gaussian peaks. The ablation craters contained two peaks. Assuming a Gaussian intensity distribution, the ablation per pulse in PMMA at 213 nm can be modeled by a parabolic function. Conclusions: Optical profilometry can be used to accurately measure the ablation per pulse and evaluate the homogeneity of the beam.

  13. Laser ablation studies of concrete

    SciTech Connect

    Savina, M.; Xu, Z.; Wang, Y.; Reed, C.; Pellin, M.

    1999-10-20

    Laser ablation was studied as a means of removing radioactive contaminants from the surface and near-surface regions of concrete. The authors present the results of ablation tests on cement and concrete samples using a 1.6 kW pulsed Nd:YAG laser with fiber optic beam delivery. The laser-surface interaction was studied using cement and high density concrete as targets. Ablation efficiency and material removal rates were determined as functions of irradiance and pulse overlap. Doped samples were also ablated to determine the efficiency with which surface contaminants were removed and captured in the effluent. The results show that the cement phase of the material melts and vaporizes, but the aggregate portion (sand and rock) fragments. The effluent consists of both micron-size aerosol particles and chunks of fragmented aggregate material. Laser-induced optical emission spectroscopy was used to analyze the surface during ablation. Analysis of the effluent showed that contaminants such as cesium and strontium were strongly segregated into different regions of the particle size distribution of the aerosol.

  14. A molecular-beam optical Stark study of lines in the (1,0) band of the F4delta(7/2)-X4delta(7/2) transition of iron monohydride, FeH.

    PubMed

    Steimle, Timothy C; Chen, Jinhai; Harrison, Jeremy J; Brown, John M

    2006-05-14

    A supersonic molecular beam of iron monohydride, FeH, has been generated using a laser ablation/chemical reaction scheme and probed at near-natural linewidth resolution by optical Stark spectroscopy utilizing laser-induced fluorescence detection. The observed Stark splitting in Q(3.5) and R(3.5) lines of the F4delta(7/2) <-- X4delta(7/2) (1,0) transition were analyzed to determine values for the magnitudes of the permanent electric dipole moments, absolute value(mu), which were found to be 2.63(3) and 1.29(3) D for the X4delta (v = 0) and F4delta (v = 1) states, respectively. A comparison with ab initio theoretical predictions is made. The lambda doubling in the low-J levels of the F4delta(7/2) (v = 1) state is also modeled.

  15. Development of a Silicon Carbide Molecular Beam Nozzle for Simulation Planetary Flybys and Low-Earth Orbit

    NASA Technical Reports Server (NTRS)

    Patrick, E. L.; Earle, G. D.; Kasprzak, W. T.; Mahaffy, Paul R.

    2008-01-01

    From commercial origins as a molybdenum molecular beam nozzle, a ceramic nozzle of silicon carbide (SiC) was developed for space environment simulation. The nozzle is mechanically stable under extreme conditions of temperature and pressure. A heated, continuous, supersonically-expanded hydrogen beam with a 1% argon seed produced an argon beam component of nearly 4 km/s, with an argon flux exceeding 1x1014 /cm2.s. This nozzle was part of a molecular beam machine used in the Atmospheric Experiments Branch at NASA Goddard Space Flight Center to characterize the performance of the University of Texas at Dallas Ram Wind Sensor (RWS) aboard the Air Force Communications/Navigation Outage Forecasting System (C/NOFS) launched in the Spring of 2008.

  16. SU-E-T-131: Dosimetric Impact and Evaluation of Different Heterogenity Algorithm in Volumetric Modulated Arc Therapy Plan for Stereotactic Ablative Radiotherapy Lung Treatment with the Flattening Filter Free Beam

    SciTech Connect

    Chung, J; Kim, J; Lee, J; Kim, Y

    2014-06-01

    Purpose: The present study aimed to investigate the dosimetric impacts of the anisotropic analytic algorithm (AAA) and the Acuros XB (AXB) plan for lung stereotactic ablative radiation therapy using flattening filter-free (FFF) beam. We retrospectively analyzed 10 patients. Methods: We retrospectively analyzed 10 patients. The dosimetric parameters for the target and organs at risk (OARs) from the treatment plans calculated with these dose calculation algorithms were compared. The technical parameters, such as the computation times and the total monitor units (MUs), were also evaluated. Results: A comparison of DVHs from AXB and AAA showed that the AXB plan produced a high maximum PTV dose by average 4.40% with a statistical significance but slightly lower mean PTV dose by average 5.20% compared to the AAA plans. The maximum dose to the lung was slightly higher in the AXB compared to the AAA. For both algorithms, the values of V5, V10 and V20 for ipsilateral lung were higher in the AXB plan more than those of AAA. However, these parameters for contralateral lung were comparable. The differences of maximum dose for the spinal cord and heart were also small. The computation time of AXB was found fast with the relative difference of 13.7% than those of AAA. The average of monitor units (MUs) for all patients was higher in AXB plans than in the AAA plans. These results indicated that the difference between AXB and AAA are large in heterogeneous region with low density. Conclusion: The AXB provided the advantages such as the accuracy of calculations and the reduction of the computation time in lung stereotactic ablative radiotherapy (SABR) with using FFF beam, especially for VMAT planning. In dose calculation with the media of different density, therefore, the careful attention should be taken regarding the impacts of different heterogeneity correction algorithms. The authors report no conflicts of interest.

  17. Molecular beam scattering from C-13 enriched Kapton and correlation with the EOIM-3 carousel experiment

    NASA Technical Reports Server (NTRS)

    Minton, Timothy K.; Moore, Teresa A.

    1995-01-01

    Mass spectra of products emerging from identical samples of a C-13-enriched polyimide polymer (chemically equivalent to Kapton) under atomic oxygen bombardment in space and in the laboratory were collected. Reaction products unambiguously detected in space were CO-13, NO, (12)CO2, and (13)CO2. These reaction products and two others, H2O and CO-12, were detected in the laboratory, along with inelastically scattered atomic and molecular oxygen. Qualitative agreement was seen in the mass spectra taken in space and in the laboratory; the agreement may be improved by reducing the fraction of O2 in the laboratory molecular beam. Both laboratory and space data indicated that CO and CO2 products come preferentially from reaction with the imide component of the polymer chain, raising the possibility that the either component may degrade in part by the 'evaporation' of higher molecular weight fragments. Laboratory time-of-flight distributions showed: (1) incomplete energy accommodation of impinging O and O2 species that do not react with the surface; and (2) both hyperthermal and thermal CO and CO2 products, suggesting two distinct reaction mechanisms with the surface.

  18. Fast, high temperature and thermolabile GC--MS in supersonic molecular beams

    NASA Astrophysics Data System (ADS)

    Dagan, Shai; Amirav, Aviv

    1994-05-01

    This work describes and evaluates the coupling of a fast gas chromatograph (GC) based on a short column and high carrier gas flow rate to a supersonic molecular beam mass spectrometer (MS). A 50 cm long megabore column serves for fast GC separation and connects the injector to the supersonic nozzle source. Sampling is achieved with a conventional syringe based splitless sample injection. The injector contains no septum and is open to the atmosphere. The linear velocity of the carrier gas is controlled by a by-pass (make-up) gas flow introduced after the column and prior to the supersonic nozzle. The supersonic expansion serves as a jet separator and the skimmed supersonic molecular beam (SMB) is highly enriched with the heavier organic molecules. The supersonic molecular beam constituents are ionized either by electron impact (EI) or hyperthermal surface ionization (HSI) and mass analyzed. A 1 s fast GC--MS of four aromatic molecules in methanol is demonstrated and some fundamental aspects of fast GC--MS with time limit constraints are outlined. The flow control (programming) of the speed of analysis is shown and the analysis of thermolabile and relatively non-volatile molecules is demonstrated and discussed. The tail-free, fast GC--MS of several mixtures is shown and peak tailing of caffeine is compared with that of conventional GC--MS. The improvement of the peak shapes with the SMB--MS is analyzed with the respect to the elimination of thermal vacuum chamber background. The extrapolated minimum detected amount was about 400 ag of anthracence-d10, with an elution time which was shorter than 2s. Repetitive injections could be performed within less than 10 s. The fast GC--MS in SMB seems to be ideal for fast target compound analysis even in real world, complex mixtures. The few seconds GC--MS separation and quantification of lead (as tetraethyllead) in gasoline, caffeine in coffee, and codeine in a drug is demonstrated. Controlled HSI selectivity is demonstrated in

  19. Some interesting aspects of physisorption stay-time measurements obtained using molecular-beam techniques. [on Ni surface

    NASA Technical Reports Server (NTRS)

    Wilmoth, R. G.; Fisher, S. S.

    1974-01-01

    Stay-time distributions have been obtained for Xe physisorbing on polycrystalline nickel as a function of the target temperature using a pulsed molecular-beam technique. Some interesting effects due to ion bombardment of the surface using He, Ar, and Xe ions are presented. Measured detector signal shapes are found to deviate from those predicted for first-order desorption with velocities corresponding to Maxwellian effusion at the surface temperature. Evidence is found for interaction between beam pulse adsorption and steady-state adsorption of beam species background atoms.

  20. Development of an apparatus for obtaining molecular beams in the energy range from 2 to 200 eV

    NASA Technical Reports Server (NTRS)

    Clapier, R.; Devienne, F. M.; Roustan, A.; Roustan, J. C.

    1985-01-01

    The formation and detection of molecular beams obtained by charge exchange from a low-energy ion source is discussed. Dispersion in energy of the ion source was measured and problems concerning detection of neutral beams were studied. Various methods were used, specifically secondary electron emissivity of a metallic surface and ionization of a gas target with a low ionization voltage. The intensities of neutral beams as low as 10 eV are measured by a tubular electron multiplier and a lock-in amplifier.

  1. Reduction of spectral interferences and noise effects in laser ablation molecular isotopic spectrometry with partial least square regression - a computer simulation study

    NASA Astrophysics Data System (ADS)

    Mao, Xianglei; Chan, George C.-Y.; Zorba, Vassilia; Russo, Richard E.

    2016-08-01

    The fundamental analytical accuracies and precisions attainable by laser ablation molecular isotopic spectrometry (LAMIS), with emphasis on the impacts from spectral interferences and measurement noise, were investigated by means of computer simulation. The study focused on the analysis of a minor isotope at sub- to single-percentage abundance level. With a natural abundance about 1.1% for 13C, the C2 Swan band (d3Πg-a3Πu) with Δν = + 1 was selected as a representative system. The characteristics (e.g., noise amplitude and distribution, signal strength, and signal-to-background ratio) of the simulated spectra were experimentally characterized. Partial least square (PLS) regression was used to extract isotopic information from the simulated molecular spectra. In the absence of any spectral interference and with the use of a calibration set consisting of eleven isotopic standards, the theoretical accuracies and precisions with signal accumulation from 100 laser shots are about 0.002% and 0.001%, respectively, in absolute percentage abundance of 13C. The theoretical analytical accuracies slightly degrade, but are adequate for many applications, to 0.004% and 0.008% respectively, for calibrations involving only three and two isotopic standards. It was found that PLS regression is not only immune to both source-flicker and photon-shot noise, but is also effective in differentiating the spectral patterns from the analyte against those from spectral interferences. The influences of spectral interference from single or multiple atomic emission lines were simulated, and new ways to minimize their impacts were formulated and demonstrated. It was found that the wavelength range selected for the computation of the normalization factor should not contain any spectral-interfering peak, and a properly chosen wavelength range increases the tolerance of spectral interference by at least one order of magnitude. With matrix-matched calibration standards, the precisions (expressed

  2. Excimer laser ablation of aluminum: influence of spot size on ablation rate

    NASA Astrophysics Data System (ADS)

    Shaheen, M. E.; Gagnon, J. E.; Fryer, B. J.

    2016-11-01

    The dependence of ablation rate of an Al alloy on laser beam spot size (10–150 µm) was investigated using an ArF excimer laser operating at a wavelength of 193 nm and pulse width less than 4 ns. Ablation was conducted in air at a fluence of 11 J cm‑2 and at a repetition rate of 20 Hz. Surface morphology and depth of craters produced by a variable number of laser pulses were characterized using optical and scanning electron microscopy. Laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) was used as an additional diagnostic technique to estimate the amount of material ablated from craters produced by a laser beam of different diameters. Laser beam spot size and number of laser pulses applied to the same spot were found to influence crater morphology, ablation rate, shape and amount of particles deposited at or around the crater rim. Ablation rate was found to be less dependent on spot size for craters greater than 85 µm. A four-fold increase in ablation rate was observed with decreasing crater size from 150 µm to 10 µm.

  3. Modeling CO{sub 2} Laser Ablative Impulse with Polymers

    SciTech Connect

    Sinko, John E.; Phipps, Claude R.; Sasoh, Akihiro

    2010-10-08

    Laser ablation vaporization models have usually ignored the spatial dependence of the laser beam. Here, we consider effects from modeling using a Gaussian beam for both photochemical and photothermal conditions. The modeling results are compared to experimental and literature data for CO{sub 2} laser ablation of the polymer polyoxymethylene under vacuum, and discussed in terms of the ablated mass areal density and momentum coupling coefficient. Extending the scope of discussion, laser ablative impulse generation research has lacked a cohesive strategy for linking the vaporization and plasma regimes. Existing models, mostly formulated for ultraviolet laser systems or metal targets, appear to be inappropriate or impractical for applications requiring CO{sub 2} laser ablation of polymers. A recently proposed method for linking the vaporization and plasma regimes for analytical modeling is addressed here along with the implications of its use. Key control parameters are considered, along with the major propulsion parameters needed for laser ablation propulsion modeling.

  4. Photoluminescence from CdTe/sapphire films prepared by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Edwards, S. T.; Schreiner, A. F.; Myers, T. M.; Schetzina, J. F.

    1983-11-01

    Photoluminescence studies at 77 K are reported for CdTe/sapphire films prepared by molecular beam epitaxy. The CdTe/sapphire epilayers exhibited very bright photoluminescence spectra that were dominated by the near-edge emission band at 1.58 eV. The best CdTe/sapphire film proved to be the brightest source of luminescence of any CdTe specimen studied in our laboratories, including homoepitaxial films and bulk hydroplane polished samples. The CdTe/sapphire films also exhibited the best lateral uniformity as manifested by a nearly constant luminescence intensity over their surfaces. These results provide new evidence that high quality CdTe epitaxy on sapphire has been achieved.

  5. GaAs Core/SrTiO3 Shell Nanowires Grown by Molecular Beam Epitaxy.

    PubMed

    Guan, X; Becdelievre, J; Meunier, B; Benali, A; Saint-Girons, G; Bachelet, R; Regreny, P; Botella, C; Grenet, G; Blanchard, N P; Jaurand, X; Silly, M G; Sirotti, F; Chauvin, N; Gendry, M; Penuelas, J

    2016-04-13

    We have studied the growth of a SrTiO3 shell on self-catalyzed GaAs nanowires grown by vapor-liquid-solid assisted molecular beam epitaxy on Si(111) substrates. To control the growth of the SrTiO3 shell, the GaAs nanowires were protected using an arsenic capping/decapping procedure in order to prevent uncontrolled oxidation and/or contamination of the nanowire facets. Reflection high energy electron diffraction, scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy were performed to determine the structural, chemical, and morphological properties of the heterostructured nanowires. Using adapted oxide growth conditions, it is shown that most of the perovskite structure SrTiO3 shell appears to be oriented with respect to the GaAs lattice. These results are promising for achieving one-dimensional epitaxial semiconductor core/functional oxide shell nanostructures. PMID:27008537

  6. Formation of GeSn alloy on Si(100) by low-temperature molecular beam epitaxy

    SciTech Connect

    Talochkin, A. B.; Mashanov, V. I.

    2014-12-29

    GeSn alloys grown on Si(100) by the low-temperature (100 °C) molecular beam epitaxy are studied using scanning tunneling microscopy and Raman spectroscopy. It is found that the effect of Sn as a surfactant modifies substantially the low-temperature growth mechanism of Ge on Si. Instead of the formation of small Ge islands surrounded by amorphous Ge, in the presence of Sn, the growth of pure Ge islands appears via the Stranski-Krastanov growth mode, and a partially relaxed Ge{sub 1−x}Sn{sub x} alloy layer with the high Sn-fraction up to 40 at. % is formed in the area between them. It is shown that the observed growth mode induced by high surface mobility of Sn and the large strain of the pseudomorphic state of Ge to Si ensures the minimum elastic-strain energy of the structure.

  7. Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy.

    PubMed

    Gao, Xian; Wei, Zhipeng; Zhao, Fenghuan; Yang, Yahui; Chen, Rui; Fang, Xuan; Tang, Jilong; Fang, Dan; Wang, Dengkui; Li, Ruixue; Ge, Xiaotian; Ma, Xiaohui; Wang, Xiaohua

    2016-01-01

    We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration.

  8. AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy.

    PubMed

    Tamura, Yosuke; Hane, Kazuhiro

    2015-12-01

    AlN nanowall structures were grown on Si (111) substrate using molecular beam epitaxy at substrate temperature of 700 °C with N/Al flux ratios ranging from 50 to 660. A few types of other AlN nanostructures were also grown under the nitrogen-rich conditions. The AlN nanowalls were ranged typically 60-120 nm in width and from 190 to 470 nm in length by changing N/Al flux ratio. The AlN nanowall structures grown along the c-plane consisted of AlN (0002) crystal with full-width at half maximum of the rocking curve about 5000 arcsec.

  9. GaAs Core/SrTiO3 Shell Nanowires Grown by Molecular Beam Epitaxy.

    PubMed

    Guan, X; Becdelievre, J; Meunier, B; Benali, A; Saint-Girons, G; Bachelet, R; Regreny, P; Botella, C; Grenet, G; Blanchard, N P; Jaurand, X; Silly, M G; Sirotti, F; Chauvin, N; Gendry, M; Penuelas, J

    2016-04-13

    We have studied the growth of a SrTiO3 shell on self-catalyzed GaAs nanowires grown by vapor-liquid-solid assisted molecular beam epitaxy on Si(111) substrates. To control the growth of the SrTiO3 shell, the GaAs nanowires were protected using an arsenic capping/decapping procedure in order to prevent uncontrolled oxidation and/or contamination of the nanowire facets. Reflection high energy electron diffraction, scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy were performed to determine the structural, chemical, and morphological properties of the heterostructured nanowires. Using adapted oxide growth conditions, it is shown that most of the perovskite structure SrTiO3 shell appears to be oriented with respect to the GaAs lattice. These results are promising for achieving one-dimensional epitaxial semiconductor core/functional oxide shell nanostructures.

  10. Cleaning chemistry of InSb(100) molecular beam epitaxy substrates

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Lewis, B. F.; Grunthaner, F. J.

    1983-01-01

    InSb has been used as a substrate for molecular beam epitaxy. For good epitaxial growth, a substrate surface which is smooth and clean on an atomic scale is required. Chemical cleaning procedures provide an oxide film to passivate the surface. This film is then desorbed by in situ heating. The material forming the film should, therefore, have a high vapor pressure at some temperature less than the substrate melting temperature. A chloride film appears to satisfy the latter requirement. The present investigation is, therefore, concerned with the formation of a chloride film rather than an oxide film. Carbon contamination has been found to cause problems in chemical cleaning procedures. The level of carbon contamination found in the case of chloride film formation, is therefore compared with the corresponding level observed in procedures using oxide films. It appears that a chloride film grown in connection with a short exposure time to a Cl2 plasma is preferable to other passivation films studied.

  11. Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy

    PubMed Central

    2011-01-01

    We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural studies of both types of NWs performed with electron microscopies reveal a marked difference between the roughnesses of their respective sidewalls. As the investigation of their length dependence on their diameter indicates that the growth of the NWs predominantly proceeds through the diffusion of adatoms from the substrate up along the sidewalls, difference in the sidewall roughness qualitatively explains the length variation measured between both types of NWs. The formation of atomically flat {111} sidewalls on the <110>-oriented Ge NWs accounts for a larger diffusion length. PMID:21711645

  12. Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi

    SciTech Connect

    Vardar, G.; Warren, M. V.; Kang, M.; Jeon, S.; Goldman, R. S.; Paleg, S. W.

    2013-01-28

    We have examined the mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi. We consider the role of the transition from group-V-rich to group-III-rich conditions, i.e., the stoichiometry threshold, in the presence of Bi. For As-rich GaAsBi growth, Bi acts as a surfactant, leading to the formation of droplet-free GaAsBi films. For films within 10% of the stoichiometric GaAsBi growth regime, surface Ga droplets are observed. However, for Ga-rich GaAsBi growth, Bi acts as an anti-surfactant, inducing Ga-Bi droplet formation. We propose a growth mechanism based upon the growth-rate-dependence of the stoichiometry threshold for GaAsBi.

  13. Deep levels in Ga-doped ZnSe grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Venkatesan, S.; Pierret, R. F.; Qiu, J.; Kobayashi, M.; Gunshor, R. L.; Kolodziejski, L. A.

    1989-10-01

    Results of a deep-level transient spectroscopy study of Ga-doped ZnSe thin films grown by molecular-beam epitaxy are presented. Two prominent deep levels were observed in all the samples investigated. The concentration of the trap detected at 0.34 eV below the conduction-band edge was essentially independent of the doping concentration and is attributed to native defects arising from Se vacancies in the ZnSe films. The second level with an activation energy of 0.26 eV shows a very strong doping dependence and is tentatively identified as arising from dopant-site (gallium-on-zinc-site) defects complexed with selenium vacancies. Preliminary results also indicate that planar doping of ZnSe significantly reduces the concentration of the Ga-vacancy complex.

  14. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  15. GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy

    SciTech Connect

    Kuang, Y. J.; Yu, K. M.; Walukiewicz, W.; Kudrawiec, R.; Luce, A. V.; Ting, M.; Tu, C. W.

    2013-03-18

    Dilute nitride GaNAsP thin films were grown via a GaAsP metamorphic buffer on GaP(100) substrate with gas-source molecular beam epitaxy. The compositions of this III-V-V-V compound were determined by channeling Rutherford backscattering spectroscopy and nuclear reaction analysis. Photoreflectance shows two distinctive transitions from the valence band to the split conduction bands due to N incorporation. Photoluminescence and optical absorption show the fundamental bandgap of Ga(N)AsP is largely tailored by the small amount of N. The observed multiband characteristics and the bandgap tunability of GaNAsP are two merits that fit into the intermediate-band solar cell roadmap, and GaNAsP of high crystal quality provides a strong candidate for intermediate band solar cell materials.

  16. Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wofford, Joseph M.; Speck, Florian; Seyller, Thomas; Lopes, Joao Marcelo J.; Riechert, Henning

    2016-07-01

    The efficacy of Ni as a surfactant to improve the crystalline quality of graphene grown directly on dielectric Al2O3(0001) substrates by molecular beam epitaxy is examined. Simultaneously exposing the substrate to a Ni flux throughout C deposition at 950 °C led to improved charge carrier mobility and a Raman spectrum indicating less structural disorder in the resulting nanocrystalline graphene film. X-ray photoelectron spectroscopy confirmed that no residual Ni could be detected in the film and showed a decrease in the intensity of the defect-related component of the C1s level. Similar improvements were not observed when a lower substrate temperature (850 °C) was used. A close examination of the Raman spectra suggests that Ni reduces the concentration of lattice vacancies in the film, possibly by catalytically assisting adatom incorporation.

  17. High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy

    SciTech Connect

    Miyashita, Naoya; Ahsan, Nazmul; Monirul Islam, Muhammad; Okada, Yoshitaka; Inagaki, Makoto; Yamaguchi, Masafumi

    2012-11-26

    We report the highest mobility values above 2000 cm{sup 2}/Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

  18. Communication: Global minimum search of Ag{sub 10}{sup +} with molecular beam optical spectroscopy

    SciTech Connect

    Shayeghi, A. Schäfer, R.; Johnston, R. L.

    2014-11-14

    The present study is focused on the optical properties of the Ag{sub 10}{sup +} cluster in the photon energy range ℏω = 1.9–4.4 eV. Absorption spectra are recorded by longitudinal molecular beam depletion spectroscopy and compared to optical response calculations using time-dependent density functional theory. Several cluster isomers obtained by the new pool-based parallel implementation of the Birmingham Cluster Genetic Algorithm, coupled with density functional theory, are used in excited state calculations. The experimental observations, together with additional simulations of ion mobilities for the several geometries found within this work using different models, clearly identify the ground state isomer of Ag{sub 10}{sup +} to be composed of two orthogonal interpenetrating pentagonal bipyramids, having overall D{sub 2d} symmetry.

  19. High resolution Raman spectroscopy of complexes and clusters in molecular beams. Performance report

    SciTech Connect

    Felker, P.M.

    1991-12-31

    The DOE-sponsored project in this laboratory has two facets. The first is the development of methods of nonlinear Raman spectroscopy for application in studies of sparse samples. The second is the application of such methods to structural and dynamical studies of species in supersonic molecular beams. The progress we have made in both of these areas is described in this paper. The report is divided into five remaining sections. The first pertains to theoretical and experimental developments in Fourier transform stimulated emission spectroscopy and Fourier transform hole-burning spectroscopy. The second deals with progress in the development of ionization-detected stimulated Raman spectroscopies (IDSRS). The third describes results from the application of IDSRS methods to studies of jet-cooled benzene clusters. The fourth describes IDSRS results from studies of hydrogen-bonded complexes containing phenols. The fifth relates to studies of carbazole-(Ar){sub n} clusters.

  20. High resolution Raman spectroscopy of complexes and clusters in molecular beams

    SciTech Connect

    Felker, P.M.

    1991-01-01

    The DOE-sponsored project in this laboratory has two facets. The first is the development of methods of nonlinear Raman spectroscopy for application in studies of sparse samples. The second is the application of such methods to structural and dynamical studies of species in supersonic molecular beams. The progress we have made in both of these areas is described in this paper. The report is divided into five remaining sections. The first pertains to theoretical and experimental developments in Fourier transform stimulated emission spectroscopy and Fourier transform hole-burning spectroscopy. The second deals with progress in the development of ionization-detected stimulated Raman spectroscopies (IDSRS). The third describes results from the application of IDSRS methods to studies of jet-cooled benzene clusters. The fourth describes IDSRS results from studies of hydrogen-bonded complexes containing phenols. The fifth relates to studies of carbazole-(Ar){sub n} clusters.

  1. Femtosecond observation of benzyne intermediates in a molecular beam: Bergman rearrangement in the isolated molecule.

    PubMed

    Diau, E W; Casanova, J; Roberts, J D; Zewail, A H

    2000-02-15

    In this communication, we report our femtosecond real-time observation of the dynamics for the three didehydrobenzene molecules (p-, m-, and o-benzyne) generated from 1,4-, 1,3-, and 1, 2-dibromobenzene, respectively, in a molecular beam, by using femtosecond time-resolved mass spectrometry. The time required for the first and the second C-Br bond breakage is less than 100 fs; the benzyne molecules are produced within 100 fs and then decay with a lifetime of 400 ps or more. Density functional theory and high-level ab initio calculations are also reported herein to elucidate the energetics along the reaction path. We discuss the dynamics and possible reaction mechanisms for the disappearance of benzyne intermediates. Our effort focuses on the isolated molecule dynamics of the three isomers on the femtosecond time scale.

  2. Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Gao, Xian; Wei, Zhipeng; Zhao, Fenghuan; Yang, Yahui; Chen, Rui; Fang, Xuan; Tang, Jilong; Fang, Dan; Wang, Dengkui; Li, Ruixue; Ge, Xiaotian; Ma, Xiaohui; Wang, Xiaohua

    2016-07-01

    We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration.

  3. Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy

    SciTech Connect

    Drozdov, M. N.; Novikov, A. V.; Yurasov, D. V.

    2013-11-15

    The effects of the growth temperature, composition, and elastic strains in separate layers on the segregation of antimony are studied experimentally for stressed SiGe structures grown by molecular beam epitaxy. It is established that the growth conditions and parameters of the structures exert an interrelated influence on the segregation of Sb: the degree of the influence of the composition and elastic stresses in the SiGe layers on Sb segregation depends on the growth temperature. It is shown that usage of a method previously proposed by us for the selective doping of silicon structures with consideration for the obtained dependences of Sb segregation on the growth conditions and parameters of the SiGe layers makes it possible to form SiGe structures selectively doped with antimony.

  4. Concentration transient analysis of antimony surface segregation during Si(100) molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Markert, L. C.; Greene, J. E.; Ni, W.-X.; Hansson, G. V.; Sundgren, J.-E.

    1991-01-01

    Antimony surface segregation during Si(100) molecular beam epitaxy (MBE) was investigated at temperatures T(sub s) = 515 - 800 C using concentration transient analysis (CTA). The dopant surface coverage Theta, bulk fraction gamma, and incorporation probability sigma during MBE were determined from secondary-ion mass spectrometry depth profiles of modulation-doped films. Programmed T(sub s) changes during growth were used to trap the surface-segregated dopant overlayer, producing concentration spikes whose integrated area corresponds to Theta. Thermal antimony doping by coevaporation was found to result in segregation strongly dependent on T(sub s) with Theta(sub Sb) values up to 0.9 monolayers (ML): in films doped with Sb(+) ions accelerated by 100 V, Theta(sub Sb) was less than or equal to 4 x 10(exp -3) ML. Surface segregation of coevaporated antimony was kinematically limited for the film growth conditions in these experiments.

  5. Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Cho, Yong-Jin; Summerfield, Alex; Davies, Andrew; Cheng, Tin S.; Smith, Emily F.; Mellor, Christopher J.; Khlobystov, Andrei N.; Foxon, C. Thomas; Eaves, Laurence; Beton, Peter H.; Novikov, Sergei V.

    2016-09-01

    We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp2-bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate.

  6. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    SciTech Connect

    Qi, Meng; Zhao, Yuning; Yan, Xiaodong; Li, Guowang; Verma, Jai; Fay, Patrick; Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Protasenko, Vladimir; Song, Bo; Xing, Huili Grace; Jena, Debdeep; Bader, Samuel

    2015-12-07

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

  7. Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy

    SciTech Connect

    Corrion, A. L.; Wu, F.; Speck, J. S.

    2012-09-01

    c-plane GaN films were grown by ammonia molecular beam epitaxy on metal-organic chemical vapor deposition templates for a wide range of NH{sub 3}:Ga flux ratios and growth temperatures, and the resulting films were characterized using atomic force microscopy, reflection high-energy electron diffraction, and transmission electron microscopy. Three distinct nitrogen-rich growth regimes - unstable layer-by-layer, quasi-stable step flow, and dislocation-mediated pitting - were identified based on the growth mode and film properties. In addition, step flow growth was observed under conditions of gallium droplet accumulation. The results indicate the existence of two regimes for step-flow growth of GaN by ammonia MBE - both gallium-rich and nitrogen-rich. Growth mode instabilities and mound formation were observed and are discussed in the context of a step-edge energy barrier to adatom diffusion over a terrace.

  8. n{sup +}-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

    SciTech Connect

    Lugani, L.; Malinverni, M.; Giraud, E.; Carlin, J.-F.; Grandjean, N.; Tirelli, S.; Marti, D.; Bolognesi, C. R.

    2014-11-17

    We report on the low-temperature growth of heavily Si-doped (>10{sup 20 }cm{sup −3}) n{sup +}-type GaN by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (<4 × 10{sup −4} Ω·cm). This is applied to the realization of regrown ohmic contacts on InAlN/GaN high electron mobility transistors. A low n{sup +}-GaN/2 dimensional electron gas contact resistivity of 0.11 Ω·mm is measured, provided an optimized surface preparation procedure, which is shown to be critical. This proves the great potentials of ammonia MBE for the realization of high performance electronic devices.

  9. Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

    NASA Astrophysics Data System (ADS)

    Calabrese, Gabriele; Corfdir, Pierre; Gao, Guanhui; Pfüller, Carsten; Trampert, Achim; Brandt, Oliver; Geelhaar, Lutz; Fernández-Garrido, Sergio

    2016-05-01

    We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowires by transmission electron microscopy reveals that they are single crystalline. Low-temperature photoluminescence spectroscopy demonstrates that in comparison to standard GaN nanowires grown on Si, the nanowires prepared on the Ti foil exhibit an equivalent crystalline perfection, a higher density of basal-plane stacking faults, but a reduced density of inversion domain boundaries. The room-temperature photoluminescence spectrum of the nanowire ensemble is not influenced or degraded by the bending of the substrate. The present results pave the way for the fabrication of flexible optoelectronic devices based on GaN nanowires on metal foils.

  10. Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy

    SciTech Connect

    Mynbaev, K. D.; Shilyaev, A. V. Bazhenov, N. L.; Izhnin, A. I.; Izhnin, I. I.; Mikhailov, N. N.; Varavin, V. S.; Dvoretsky, S. A.

    2015-03-15

    The photoluminescence method is used to study acceptor states in CdHgTe heteroepitaxial films (HEFs) grown by molecular-beam epitaxy. A comparison of the photoluminescence spectra of HEFs grown on GaAs substrates (CdHgTe/GaAs) with the spectra of CdHgTe/Si HEFs demonstrates that acceptor states with energy depths of about 18 and 27 meV are specific to CdHgTe/GaAs HEFs. The possible nature of these states and its relation to the HEF synthesis conditions and, in particular, to the vacancy doping occurring under conditions of a mercury deficiency during the course of epitaxy and postgrowth processing are discussed.

  11. Novel InGaPBi single crystal grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Yue, Li; Wang, Peng; Wang, Kai; Wu, Xiaoyan; Pan, Wenwu; Li, Yaoyao; Song, Yuxin; Gu, Yi; Gong, Qian; Wang, Shumin; Ning, Jiqian; Xu, Shijie

    2015-04-01

    InGaPBi crystalline thin films with up to 2.1% bismuth concentration have been grown on GaAs substrates by molecular beam epitaxy. Rutherford backscattering spectrometry confirms that the majority of Bi atoms are located at substitutional lattice sites. The films exhibit good surface, structural, and interface quality, and their strains can be tuned from tensile to compressive by increasing the Bi content. InBi LO and GaBi LO vibrational modes in Raman spectroscopy were observed, and their intensities increased with Bi concentration. A weak photoluminescence signal was observed at 1.78 eV at room temperature for the sample with a Bi content of 0.5%.

  12. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Qi, Meng; Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Zhao, Yuning; Protasenko, Vladimir; Song, Bo; Yan, Xiaodong; Li, Guowang; Verma, Jai; Bader, Samuel; Fay, Patrick; Xing, Huili Grace; Jena, Debdeep

    2015-12-01

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm2 is obtained with reverse bias voltage up to -20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm2 is achieved, with a breakdown voltage corresponding to a peak electric field of ˜3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

  13. Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

    SciTech Connect

    Lastras-Martínez, A. E-mail: alastras@gmail.com; Ortega-Gallegos, J.; Guevara-Macías, L. E.; Nuñez-Olvera, O.; Balderas-Navarro, R. E.; Lastras-Martínez, L. F.; Lastras-Montaño, L. A.; Lastras-Montaño, M. A.

    2014-03-01

    We report on real time-resolved Reflectance-difference (RD) spectroscopy of GaAs(001) grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spectra we demonstrated that RD line shapes are comprised of two components with different physical origins and determined their evolution during growth. Such components were ascribed to the subsurface strain induced by surface reconstruction and to surface stoichiometry. Results reported in this paper render RD spectroscopy as a powerful tool for the study of fundamental processes during the epitaxial growth of zincblende semiconductors.

  14. High reflectance III-nitride Bragg reflectors grown by molecular beam epitaxy

    SciTech Connect

    Ng, H.M.; Moustakas, T.D.

    2000-07-01

    Distributed Bragg reflector (DBR) structures based on AlN/GaN have been grown on (0001) sapphire by electron-cyclotron-resonance plasma-assisted molecular-beam epitaxy (ECR-MBE). The design of the structures was predetermined by simulations using the transmission matrix method. A number of structures have been grown with 20.5--25.5 periods showing peak reflectance ranging form the near-UV to the green wavelength regions. For the best sample, peak reflectance up to 99% was observed centered at 467 nm with a bandwidth of 45 nm. The experimental reflectance data were compared with the simulations and show excellent agreement with respect to peak reflectance, bandwidth of high reflectance and the locations of the sidelobes.

  15. Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

    SciTech Connect

    Nakhaie, S.; Wofford, J. M.; Schumann, T.; Jahn, U.; Ramsteiner, M.; Hanke, M.; Lopes, J. M. J. Riechert, H.

    2015-05-25

    Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.

  16. Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

    PubMed Central

    Gao, Xian; Wei, Zhipeng; Zhao, Fenghuan; Yang, Yahui; Chen, Rui; Fang, Xuan; Tang, Jilong; Fang, Dan; Wang, Dengkui; Li, Ruixue; Ge, Xiaotian; Ma, Xiaohui; Wang, Xiaohua

    2016-01-01

    We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration. PMID:27381641

  17. Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy

    DOE PAGES

    Vishwanath, Suresh; Liu, Xinyu; Rouvimov, Sergei; Basile, Leonardo; Lu, Ning; Azcatl, Angelica; Magno, Katrina; Wallace, Robert M.; Kim, Moon; Idrobo, Juan -Carlos; et al

    2016-01-06

    Layered materials are an actively pursued area of research for realizing highly scaled technologies involving both traditional device structures as well as new physics. Lately, non-equilibrium growth of 2D materials using molecular beam epitaxy (MBE) is gathering traction in the scientific community and here we aim to highlight one of its strengths, growth of abrupt heterostructures, and superlattices (SLs). In this work we present several of the firsts: first growth of MoTe2 by MBE, MoSe2 on Bi2Se3 SLs, transition metal dichalcogenide (TMD) SLs, and lateral junction between a quintuple atomic layer of Bi2Te3 and a triple atomic layer of MoTe2.more » In conclusion, reflected high electron energy diffraction oscillations presented during the growth of TMD SLs strengthen our claim that ultrathin heterostructures with monolayer layer control is within reach.« less

  18. Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy

    SciTech Connect

    Lu, Zhenyu; Chen, Pingping E-mail: luwei@mail.sitp.ac.cn; Shi, Suixing; Yao, Luchi; Zhou, Xiaohao; Lu, Wei E-mail: luwei@mail.sitp.ac.cn; Zhang, Zhi; Zhou, Chen; Zou, Jin

    2014-10-20

    In this work, the crystal structure of GaAs nanowires grown by molecular beam epitaxy has been tailored only by bismuth without changing the growth temperature and V/III flux ratio. The introduction of bismuth can lead to the formation of zinc-blende GaAs nanowires, while the removal of bismuth changes the structure into a 4H polytypism before it turns back to the wurtzite phase eventually. The theoretical calculation shows that it is the steadiest for bismuth to adsorb on the GaAs(111){sub B} surface compared to the liquid gold catalyst surface and the interface between the gold catalyst droplet and the nanowire, and these adsorbed bismuth could decrease the diffusion length of adsorbed Ga and hence the supersaturation of Ga in the gold catalyst droplet.

  19. Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy

    SciTech Connect

    Sadofyev, Yu. G. Martovitsky, V. P.; Bazalevsky, M. A.; Klekovkin, A. V.; Averyanov, D. V.; Vasil’evskii, I. S.

    2015-01-15

    The growth of GeSn layers by molecular-beam epitaxy on Si (100) wafers coated with a germanium buffer layer is investigated. The properties of the fabricated structures are controlled by reflection high-energy electron diffraction, atomic-force microscopy, X-ray diffractometry, Rutherford backscattering, and Raman scattering. It is shown that GeSn layers with thicknesses up to 0.5 μm and Sn molar fractions up to 0.073 manifest no sign of plastic relaxation upon epitaxy. The lattice constant of the GeSn layers within the growth plane is precisely the same as that of Ge. The effect of rapid thermal annealing on the conversion of metastable elastically strained GeSn layers into a plastically relaxed state is examined. Ge/GeSn quantum wells with Sn molar fraction up to 0.11 are obtained.

  20. Crossed molecular beam study of the reaction O([sup 3][ital P])+allene

    SciTech Connect

    Schmoltner, A.M.; Huang, S.Y.; Brudzynski, R.J.; Chu, P.M.; Lee, Y.T. )

    1993-08-01

    The reaction between ground state ([sup 3][ital P]) oxygen atoms and allene was studied under single collision conditions using the crossed molecular beams method. Product angular distributions and the translational energy distribution were determined for each channel. Two major reaction channels could be identified unambiguously: the formation of carbon monoxide and ethylene following oxygen atom attack on the central carbon atom, and the formation of allenyloxy (formyl--vinyl) radical and hydrogen atom following oxygen atom attack on the terminal carbon atom. In addition, at least one other reaction channel, which could be identified as the production of vinyl and formyl radicals, occurs. This channel involves the decomposition of acrolein which is formed by the addition of oxygen to the terminal carbon atom, followed by 1,2-hydrogen migration.

  1. Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy.

    PubMed

    Gao, Xian; Wei, Zhipeng; Zhao, Fenghuan; Yang, Yahui; Chen, Rui; Fang, Xuan; Tang, Jilong; Fang, Dan; Wang, Dengkui; Li, Ruixue; Ge, Xiaotian; Ma, Xiaohui; Wang, Xiaohua

    2016-01-01

    We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration. PMID:27381641

  2. Development of molecular beam epitaxy technology for III–V compound semiconductor heterostructure devices

    SciTech Connect

    Cheng, K. Y.

    2013-09-15

    Molecular beam epitaxy (MBE) is a versatile ultrahigh vacuum technique for growing multiple epitaxial layers of semiconductor crystals with high precision. The extreme control of the MBE technique over composition variation, interface sharpness, impurity doping profiles, and epitaxial layer thickness to the atomic level makes it possible to demonstrate a wide variety of novel semiconductor structures. Since its invention nearly 40 years ago, the MBE technique has evolved from a laboratory apparatus for exploring new materials and novel devices to a favored tool for the mass production of III–V high-speed devices. This paper will review some of the past developments in this technology and propose an outlook of future developments.

  3. Analysis of carbon in SrTiO{sub 3} grown by hybrid molecular beam epitaxy

    SciTech Connect

    Jalan, Bharat; Cagnon, Joeel; Mates, Thomas E.; Stemmer, Susanne

    2009-11-15

    Secondary ion mass spectroscopy (SIMS) was used to investigate carbon impurity concentrations in stoichiometric SrTiO{sub 3} films grown by a hybrid molecular beam epitaxy approach that uses an effusion cell to supply strontium, a rf plasma source for oxygen and a metal organic titanium source (titanium tetra isopropoxide). The carbon concentration in the films was measured as a function of growth parameters. At sufficiently high growth temperatures (>800 degree sign C), the films contain a few ppm of carbon. The challenges in accurately quantifying low carbon concentrations are discussed. A carbon-containing contamination layer is detected on the surfaces of SrTiO{sub 3} substrates and air-exposed films by SIMS and in scanning transmission electron microscopy. The contamination layer could be removed by high-temperature predeposition oxygen plasma cleaning.

  4. Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy

    PubMed Central

    Cho, Yong-Jin; Summerfield, Alex; Davies, Andrew; Cheng, Tin S.; Smith, Emily F.; Mellor, Christopher J.; Khlobystov, Andrei N.; Foxon, C. Thomas; Eaves, Laurence; Beton, Peter H.; Novikov, Sergei V.

    2016-01-01

    We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp2-bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate. PMID:27681943

  5. Electrical properties of Si:Er/Si layers grown by sublimation molecular-beam epitaxy

    SciTech Connect

    Belova, O. V.; Shabanov, V. N.; Kasatkin, A. P.; Kuznetsov, O. A.; Yablonskii, A. N.; Kuznetsov, M. V.; Kuznetsov, V. P. Kornaukhov, A. V.; Andreev, B. A.; Krasil'nik, Z. F.

    2008-02-15

    Temperature dependences of the concentration and electron Hall mobility in Si:Er/Sr epitaxial layers grown at T = 600 Degree-Sign C and annealed at 700 or 900 Degree-Sign C have been investigated. The layers were grown by sublimation molecular-beam epitaxy in vacuum ({approx}10{sup -5} Pa). The energy levels of Er-related donor centers are located 0.21-0.27 eV below the bottom of the conduction band of Si. In the range 80-300 K, the electron Hall mobility in unannealed Si:Er epitaxial layers was lower than that in Czochralski-grown single crystals by a factor of 3-10. After annealing the layers, the fraction of electron scattering from Er donor centers significantly decreases.

  6. Electrical properties of Si:Er/Si layers grown by sublimation molecular-beam epitaxy

    SciTech Connect

    Belova, O. V.; Shabanov, V. N.; Kasatkin, A. P.; Kuznetsov, O. A.; Yablonskii, A. N.; Kuznetsov, M. V.; Kuznetsov, V. P. Kornaukhov, A. V.; Andreev, B. A.; Krasil'nik, Z. F.

    2008-02-15

    Temperature dependences of the concentration and electron Hall mobility in Si:Er/Sr epitaxial layers grown at T = 600 deg. C and annealed at 700 or 900 deg. C have been investigated. The layers were grown by sublimation molecular-beam epitaxy in vacuum ({approx}10{sup -5} Pa). The energy levels of Er-related donor centers are located 0.21-0.27 eV below the bottom of the conduction band of Si. In the range 80-300 K, the electron Hall mobility in unannealed Si:Er epitaxial layers was lower than that in Czochralski-grown single crystals by a factor of 3-10. After annealing the layers, the fraction of electron scattering from Er donor centers significantly decreases.

  7. InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Robson, M. T.; LaPierre, R. R.

    2016-02-01

    InAs nanowires (NWs) were grown on silicon substrates by gas source molecular beam epitaxy using five different growth modes: (1) Au-assisted growth, (2) positioned (patterned) Au-assisted growth, (3) Au-free growth, (4) positioned Au-assisted growth using a patterned oxide mask, and (5) Au-free selective-area epitaxy (SAE) using a patterned oxide mask. Optimal growth conditions (temperature, V/III flux ratio) were identified for each growth mode for control of NW morphology and vertical NW yield. The highest yield (72%) was achieved with the SAE method at a growth temperature of 440 °C and a V/III flux ratio of 4. Growth mechanisms are discussed for each of the growth modes.

  8. Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxy

    SciTech Connect

    Grandal, J.; Sanchez-Garcia, M. A.; Calleja, E.; Luna, E.; Trampert, A.

    2007-07-09

    High quality InN nanocolumns have been grown by molecular beam epitaxy on bare and AlN-buffered Si(111) substrates. The accommodation mechanism of the InN nanocolumns to the substrate was studied by transmission electron microscopy. Samples grown on AlN-buffered Si(111) show abrupt interfaces between the nanocolumns and the buffer layer, where an array of periodically spaced misfit dislocations develops. Samples grown on bare Si(111) exhibit a thin Si{sub x}N{sub y} at the InN nanocolumn/substrate interface because of Si nitridation. The Si{sub x}N{sub y} thickness and roughness may affect the nanocolumn relative alignment to the substrate. In all cases, InN nanocolumns grow strain- and defect-free.

  9. Preface of the 18th International Conference on Molecular Beam Epitaxy (MBE 2014)

    NASA Astrophysics Data System (ADS)

    Brown, April S.; Ptak, Aaron J.

    2015-09-01

    The first International Conference on Molecular Beam Epitaxy (IC-MBE) was held in Paris in 1978, chaired by Alfred Y. Cho. Every other year since, with the exception of a four-year break after the initial meeting, the IC-MBE has been held in European, Asian, and North American venues. The 18th and latest IC-MBE was held in Flagstaff, Arizona, USA, September 7-12, 2014, and was chaired by Yong-Hang Zhang (Arizona State University). MBE is an advanced crystal growth method that benefits areas from the study of fundamental physics, all the way through the production of devices used in countless fields. IC-MBE brings together researchers from all over the world, and is the premier forum for scientific and technological exchange among researchers investigating all types of materials growth using the MBE technique.

  10. Raman measurements of substrate temperature in a molecular beam epitaxy growth chamber

    SciTech Connect

    Hutchins, T.; Nazari, M.; Eridisoorya, M.; Myers, T. M.; Holtz, M.

    2015-01-15

    A method is described for directly measuring the temperature of a substrate in a molecular-beam epitaxy (MBE) growth system. The approach relies on the establishment of the temperature dependence of Raman-active phonons of the substrate material using independently known calibration points across the range of interest. An unknown temperature in this range is then determined based on the Raman peak position with the substrate in situ the MBE chamber. The apparatus relies on conventional optics and Raman components. Shifting and broadening of the Raman spectrum are described based on the effects of thermal expansion and anharmonic decay. The choice of reference temperature is discussed. The method is qualified by examining the substrate temperature dependence, relative to that of a standard thermocouple, during a commonly used ramp procedure. Both temperature difference and time lag are obtained.

  11. Four-wave mixing in molecular gases under filamentation of the collimated femtosecond beam

    NASA Astrophysics Data System (ADS)

    Panov, N.; Kurilova, M.; Uryupina, D.; Volkov, M.; Mazhorova, A.; Volkov, R.; Kosareva, O.; Savel'ev, A.

    2014-12-01

    The four-wave mixing process during a single-color femtosecond filamentation in the molecular gas is observed experimentally. The role of the seed is represented by the self-shifted to infrared region Raman bullet and the new blue-shifted component burns up as a result of the interaction between the Raman bullet and the reservoir radiation. The blue-shifted component propagates along the beam axis. The theoretical analysis of the four-wave mixing process synchronism shows that the on-axis forward propagation of the blue-shifted component occurs when the plasma concentration is higher than a certain threshold (3.3  ×  1016 cm-3 at the fundamental wavelength of 800 nm).

  12. High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

    SciTech Connect

    Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne

    2016-01-01

    High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

  13. Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

    1987-01-01

    GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

  14. Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates

    NASA Technical Reports Server (NTRS)

    Mii, Y. J.; Kao, Y. C.; Wu, B. J.; Wang, K. L.; Lin, T. L.; Liu, J. K.

    1988-01-01

    GaAs has been grown on porous Si directly and on Si buffer layer-porous Si substrates by molecular-beam epitaxy. In the case of GaAs growth on porous Si, transmission electron microscopy (TEM) reveals that the dominant defects in GaAs layers grown on porous Si are microtwins and stacking faults, which originate from the GaAs/porous Si interface. GaAs is found to penetrate into the porous Si layers. By using a thin Si buffer layer (50 nm), GaAs penetration diminishes and the density of microtwins and stacking faults is largely reduced and localized at the GaAs/Si buffer interface. However, there is a high density of threading dislocations remaining. Both Si (100) aligned and four degree tilted substrates have been examined in this study. TEM results show no observable effect of the tilted substrates on the quality of the GaAs epitaxial layer.

  15. Molecular beam epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis

    SciTech Connect

    Rushforth, A. W.; Wang, M.; Farley, N. R. S.; Campion, R. P.; Edmonds, K. W.; Staddon, C. R.; Foxon, C. T.; Gallagher, B. L.

    2008-10-01

    We present an experimental investigation of the magnetic, electrical, and structural properties of Ga{sub 0.94}Mn{sub 0.06}As{sub 1-y}P{sub y} layers grown by molecular beam epitaxy on GaAs substrates for y{<=}0.3. X-ray diffraction measurements reveal that the layers are under tensile strain, which gives rise to a magnetic easy axis perpendicular to the plane of the layers. The strength of the magnetic anisotropy and the coercive field increases as the phosphorous concentration is increased. The resistivity of all samples shows metallic behavior with the resistivity increasing as y increases. These materials will be useful for studies of micromagnetic phenomena requiring metallic ferromagnetic material with perpendicular magnetic anisotropy.

  16. Molecular beam epitaxy of SrTiO3 with a growth window

    NASA Astrophysics Data System (ADS)

    Jalan, Bharat; Moetakef, Pouya; Stemmer, Susanne

    2009-07-01

    Many complex oxides with only nonvolatile constituents do not have a wide growth window in conventional molecular beam epitaxy (MBE) approaches, which makes it difficult to obtain stoichiometric films. Here it is shown that a growth window in which the stoichiometry is self-regulating can be achieved for SrTiO3 films by using a hybrid MBE approach that uses a volatile metal-organic source for Ti, titanium tetra isopropoxide (TTIP). The growth window widens and shifts to higher TTIP/Sr flux ratios with increasing temperature, showing that it is related to the desorption of the volatile TTIP. We demonstrate stoichiometric, highly perfect, insulating SrTiO3 films. The approach can be adapted for the growth of other complex oxides that previously were believed to have no wide MBE growth window.

  17. Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

    PubMed Central

    Baiutti, Federico; Christiani, Georg

    2014-01-01

    Summary In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2− xSrxNiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control. PMID:24995148

  18. Controlling field-effect mobility in pentacene-based transistors by supersonic molecular-beam deposition

    SciTech Connect

    Toccoli, T.; Pallaoro, A.; Coppede, N.; Iannotta, S.; De Angelis, F.; Mariucci, L.; Fortunato, G.

    2006-03-27

    We show that pentacene field-effect transistors, fabricated by supersonic molecular beams, have a performance strongly depending on the precursor's kinetic energy (K{sub E}). The major role played by K{sub E} is in achieving highly ordered and flat films. In the range K{sub E}{approx_equal}3.5-6.5 eV, the organic field effect transistor linear mobility increases of a factor {approx}5. The highest value (1.0 cm{sup 2} V{sup -1} s{sup -1}) corresponds to very uniform and flat films (layer-by-layer type growth). The temperature dependence of mobility for films grown at K{sub E}>6 eV recalls that of single crystals (bandlike) and shows an opposite trend for films grown at K{sub E}{<=}5.5 eV.

  19. Molecular beam epitaxy growth of SnO{sub 2} using a tin chemical precursor

    SciTech Connect

    Wang, Tianqi; Prakash, Abhinav; Jalan, Bharat; Warner, Ellis; Gladfelter, Wayne L.

    2015-03-15

    The authors report on the development of a molecular beam epitaxy approach for atomic layer controlled growth of phase-pure, single-crystalline epitaxial SnO{sub 2} films with scalable growth rates using a highly volatile precursor (tetraethyltin) for tin and rf-oxygen plasma for oxygen. Smooth, epitaxial SnO{sub 2} (101) films on r-sapphire (101{sup ¯}2) substrates were grown as a function of tin precursor flux and substrate temperatures between 300 and 900 °C. Three distinct growth regimes were identified where SnO{sub 2} films grew in a reaction-, flux-, and desorption-limited mode, respectively, with increasing substrate temperature. In particular, with increasing tin flux, the growth rates were found to increase and then saturate indicating any excess tin precursor desorbs above a critical beam equivalent pressure of tin precursor. Important implications of growth kinetic behaviors on the self-regulating stoichiometric growth of perovskite stannates are discussed.

  20. State-to-state inelastic and reactive molecular beam scattering from surfaces

    SciTech Connect

    Lykke, K.R. ); Kay, B.D. )

    1990-01-01

    Resonantly enhanced multiphoton ionization (REMPI) laser spectroscopic and molecular beam-surface scattering techniques are coupled to study inelastic and reactive gas-surface scattering with state-to-state specificity. Rotational, vibrational, translational and angular distributions have been measured for the inelastic scattering of HCI and N {sub 2} from Au(111). In both cases the scattering is direct-inelastic in nature and exhibits interesting dynamical features such as rotational rainbow scattering. In an effort to elucidate the dynamics of chemical reactions occurring on surfaces we have extended our quantum-resolved scattering studies to include the reactive scattering of a beam of gas phase H-atoms from a chlorinated metal surface M-CI. The nascent rotational and vibrational distributions of the HCI product are determined using REMPI. The thermochemistry for this reaction on Au indicates that the product formation proceeding through chemisorbed H-atoms is slightly endothermic while direct reaction of a has phase H-atom with M-CI is highly exothermic (ca. 50 kcal/mole). Details of the experimental techniques, results and implications regarding the scattering dynamics are discussed. 55 ref., 8 fig.

  1. Surface reconstructions in molecular beam epitaxy of SrTiO{sub 3}

    SciTech Connect

    Kajdos, Adam P.; Stemmer, Susanne

    2014-11-10

    We show that reflection high-energy electron diffraction (RHEED) can be used as a highly sensitive tool to track surface and resulting film stoichiometry in adsorption-limited molecular beam epitaxy of (001) SrTiO{sub 3} thin films. Even under growth conditions that yield films with a lattice parameter that is identical to that of stoichiometric bulk crystals within the detection limit of high-resolution x-ray diffraction (XRD), changes in surface reconstruction occur from (1 × 1) to (2 × 1) to c(4 × 4) as the equivalent beam pressure of the Ti metalorganic source is increased. These surface reconstructions are correlated with a shift from mixed SrO/TiO{sub 2} termination to pure TiO{sub 2} termination. The crossover to TiO{sub 2} surface termination is also apparent in a phase shift in RHEED oscillations observed at the beginning of growth. Comparison with prior results for carrier mobilities of doped films shows that the best films are grown under conditions of a TiO{sub 2}-saturated surface [c(4 × 4) reconstruction] within the XRD growth window.

  2. Surface diffusion during shadow-mask-assisted molecular-beam epitaxy of III-V compounds

    SciTech Connect

    Schallenberg, T.; Brunner, K.; Borzenko, T.; Molenkamp, L.W.; Karczewski, G.

    2005-07-01

    We present a comprehensive discussion of molecular-beam epitaxy of III-V compound semiconductors through shadow masks. Based on model calculations and growth experiments, we examine how the surface diffusion and the incorporation of group-III adatoms depend on the growth configuration, group-III and group-V fluxes, and the crystal orientation. According to a macroscopic diffusion model, gradients of the group-V flux drive the unidirectional migration of group-III adatoms. Although this effect is generally observed in the experiments, the different growth profiles obtained for [110]- and [110]-oriented samples reflect the different roles of A-type and B-type steps in the incorporation of group-III adatoms. We also demonstrate that during the heteroepitaxial growth of InAs, the dissociation of the GaAs substrate is locally enhanced by the incidence of the In beam. This effect can be exploited for shadow-mask-assisted etching on selected areas. In addition, we show how the positions and sizes of III-V nanostructures can be controlled with high precision on a planar substrate by the usage of shadow masks with multiple nanoscale apertures.

  3. Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Wong, M.H.; Mishra, Umesh K.; Wu Feng; Mates, Thomas E.; Speck, James S.

    2008-11-01

    The polarity of GaN grown by plasma-assisted molecular beam epitaxy was inverted from N-face to Ga-face by simultaneously exposing the surface to Mg and activated N fluxes during a growth interruption at a reduced substrate temperature. Growth studies suggested that a Mg{sub x}N{sub y} compound was responsible for inverting the crystal. The change in polarity was verified in situ by reflection high energy electron diffraction via GaN surface reconstructions, and ex situ by convergent beam electron diffraction and KOH etch studies. The surface of the inverted material showed smooth step flow features. Ga-face high electron mobility transistors with good dc and small signal performance were fabricated on the inverted epilayers. A drain-source current of 0.84 A/mm was measured at a gate-source voltage of +1 V. Current-gain cutoff and maximum oscillation frequencies of 22 and 53 GHz, respectively, were measured in these devices. The device performance is similar to that of Ga-face transistors with comparable dimensions.

  4. New simultaneous thermogravimetry and modulated molecular beam mass spectrometry apparatus for quantitative thermal decomposition studies

    SciTech Connect

    Behrens, R. Jr.

    1987-03-01

    A new type of instrument has been designed and constructed to measure quantitatively the gas phase species evolving during thermal decompositions. These measurements can be used for understanding the kinetics of thermal decomposition, determining the heats of formation and vaporization of high-temperature materials, and analyzing sample contaminants. The new design allows measurements to be made on the same time scale as the rates of the reactions being studied, provides a universal detection technique to study a wide range of compounds, gives quantitative measurements of decomposition products, and minimizes interference from the instrument on the measurements. The instrument design is based on a unique combination of thermogravimetric analysis (TGA), differential thermal analysis (DTA), and modulated beam mass spectroscopy (MBMS) which are brought together into a symbiotic relationship through the use of differentially pumped vacuum systems, modulated molecular beam techniques, and computer control and data-acquisition systems. A data analysis technique that calculates partial pressures in the reaction cell from the simultaneous microbalance force measurements and the modulated mass spectrometry measurements has been developed. This eliminates the need to know the ionization cross section, the ion dissociation channels, the quadrupole transmission, and the ion detector sensitivity for each thermal decomposition product prior to quantifying the mass spectral data. The operation of the instrument and the data analysis technique are illustrated with the thermal decomposition of contaminants from a precipitated palladium powder.

  5. Molecular Beam and Surface Science Studies of Heterogeneous Reaction Kinetics Including Combustion Dynamics. Final Technical Report.

    SciTech Connect

    Sibener, S. J.

    2006-06-23

    This research program examined the heterogeneous reaction kinetics and reaction dynamics of surface chemical processes which are of direct relevance to efficient energy production, condensed phase reactions, and mateials growth including nanoscience objectives. We have had several notable scientific and technical successes. Illustrative highlights include: (1) a thorough study of how one can efficiently produce synthesis gas (SynGas) at relatively low Rh(111) catalyst temperatures via the reaction CH{sub4}+1/2 O{sub2} {r_arrow} CO+2H{sub2}. In these studies methane activation is accomplished utilizing high-kinetic energy reagents generated via supersonic molecular beams, (2) experiments which have incisively probed the partial oxidation chemistry of adsorbed 1- and 2- butene on Rh and ice, as well as partial oxidation of propene on Au; (3) investigation of structural changes which occur to the reconstructed (23x{radical}3)-Au(111) surface upon exposure to atomic oxygen, (4) a combined experimental and theoretical examination of the fundamental atomic-level rules which govern defect minimization during the formation of self-organizing stepped nanostructures, (5) the use of these relatively defect-free nanotemplates for growing silicon nanowires having atomically-dimensioned widths, (6) a combined scanning probe and atomic beam scattering study of how the presence of self-assembling organic overlayers interact with metallic supports substrates - this work hs led to revision of the currently held view of how such adsorbates reconfigure surface structure at the atomic level, (7) an inelastic He atom scattering study in which we examined the effect of chain length on the low-energy vibrations of alkanethiol striped phase self-assembled monolayers on Au(111), yielding information on the forces that govern interfacial self-assembly, (8) a study of the vibrational properties of disordered films of SF{sub6} adsorbed on Au(111), and (9) a study of the activated chemistry and

  6. Growth of SrVO{sub 3} thin films by hybrid molecular beam epitaxy

    SciTech Connect

    Eaton, Craig; Brahlek, Matthew; Engel-Herbert, Roman; Moyer, Jarrett A.; Alipour, Hamideh M.; Grimley, Everett D.; LeBeau, James M.

    2015-11-15

    The authors report the growth of stoichiometric SrVO{sub 3} thin films on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (001) substrates using hybrid molecular beam epitaxy. This growth approach employs a conventional effusion cell to supply elemental A-site Sr and the metalorganic precursor vanadium oxytriisopropoxide (VTIP) to supply vanadium. Oxygen is supplied in its molecular form through a gas inlet. An optimal VTIP:Sr flux ratio has been identified using reflection high-energy electron-diffraction, x-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy, demonstrating stoichiometric SrVO{sub 3} films with atomically flat surface morphology. Away from the optimal VTIP:Sr flux, characteristic changes in the crystalline structure and surface morphology of the films were found, enabling identification of the type of nonstoichiometry. For optimal VTIP:Sr flux ratios, high quality SrVO{sub 3} thin films were obtained with smallest deviation of the lattice parameter from the ideal value and with atomically smooth surfaces, indicative of the good cation stoichiometry achieved by this growth technique.

  7. Diffusion-driven growth of nanowires by low-temperature molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Rueda-Fonseca, P.; Orrò, M.; Bellet-Amalric, E.; Robin, E.; Den Hertog, M.; Genuist, Y.; André, R.; Tatarenko, S.; Cibert, J.

    2016-04-01

    With ZnTe as an example, we use two different methods to unravel the characteristics of the growth of nanowires (NWs) by gold-catalyzed molecular beam epitaxy at low temperature. In the first approach, CdTe insertions have been used as markers, and the nanowires have been characterized by scanning transmission electron microscopy, including geometrical phase analysis and energy dispersive electron spectrometry; the second approach uses scanning electron microscopy and the statistics of the relationship between the length of the tapered nanowires and their base diameter. Axial and radial growth are quantified using a diffusion-limited model adapted to the growth conditions; analytical expressions describe well the relationship between the NW length and the total molecular flux (taking into account the orientation of the effusion cells), and the catalyst-nanowire contact area. A long incubation time is observed. This analysis allows us to assess the evolution of the diffusion lengths on the substrate and along the nanowire sidewalls, as a function of temperature and deviation from stoichiometric flux.

  8. Pyrolysis-Molecular Beam Mass Spectrometry to Characterize Soil Organic Matter Composition in Chemically Isolated Fractions from Differing Land Uses

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Questions concerning the role of soil organic matter (SOM) in soil fertility, ecosystem functioning and global change requires knowledge of the controls on SOM stabilization and their interactions. Pyrolysis molecular beam mass spectrometry (py-MBMS) provides a powerful and rapid means of characteri...

  9. State selective laser photofragment spectroscopy of OH in the MPD of CH 3OH in a molecular beam

    NASA Astrophysics Data System (ADS)

    Schmiedl, R.; Meier, U.; Welge, K. H.

    1981-06-01

    The internal and recoil energy of OH from the IR MPD ofCH 30H has been investigated under molecular-beam conditions by laser-induced fluorescence. The recoil energy has been obtained by Doppler spectroscopy. A Boltzmann-type distribution is found for rotation in v' = 0 and translation with temperatures Trot = (630 ± 60) and Tkin = (400 ± 20) K.

  10. Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy

    SciTech Connect

    Teterin, P. E. Averyanov, D. V.; Sadofyev, Yu. G. Parfenov, O. E.; Likhachev, I. A.; Storchak, V. G.

    2015-01-15

    Epitaxial EuO thin films with thickness up to 60 nm have been grown by molecular beam epitaxy both on SrO sublayers and directly on Si (001) substrates. Crystal structure has been controlled in situ by reflection high energy electron diffraction. Ex situ studies by X-ray diffraction and Rutherford backscattering have confirmed high crystalline quality of the films.

  11. Ultraviolet femtosecond and nanosecond laser ablation of silicon: Ablation efficiency and laser-induced plasma expansion

    SciTech Connect

    Zeng, Xianzhong; Mao, Xianglei; Greif, Ralph; Russo, Richard E.

    2004-03-23

    Femtosecond laser ablation of silicon in air was studied and compared with nanosecond laser ablation at ultraviolet wavelength (266 nm). Laser ablation efficiency was studied by measuring crater depth as a function of pulse number. For the same number of laser pulses, the fs-ablated crater was about two times deeper than the ns-crater. The temperature and electron number density of the pulsed laser-induced plasma were determined from spectroscopic measurements. The electron number density and temperature of fs-pulse plasmas decreased faster than ns-pulse plasmas due to different energy deposition mechanisms. Images of the laser-induced plasma were obtained with femtosecond time-resolved laser shadowgraph imaging. Plasma expansion in both the perpendicular and the lateral directions to the laser beam were compared for femtosecond and nanosecond laser ablation.

  12. Flat-Panel Cone-Beam Ct-Guided Radiofrequency Ablation of Very Small (≤1.5 cm) Liver Tumors: Technical Note on a Preliminary Experience

    SciTech Connect

    Cazzato, Roberto Luigi Buy, Xavier Alberti, Nicolas Fonck, Mariane; Grasso, Rosario Francesco; Palussière, Jean

    2015-02-15

    PurposeThe aim of the present study was to investigate the technical feasibility of flat-panel cone-beam CT (CBCT)-guided radiofrequency ablation (RFA) of very small (<1.5 cm) liver tumors.Materials and MethodsPatients included were candidates for hepatic percutaneous RFA as they had single biopsy-proven hepatic tumors sized ≤1.5 cm and poorly defined on ultrasonography. Following apnea induction, unenhanced CBCT scans were acquired and used to deploy the RF electrode with the aid of a virtual navigation system. If the tumor was not clearly identified on the unenhanced CBCT scan, a right retrograde arterial femoral access was established to carry out hepatic angiography and localize the tumor. Patients’ lesions and procedural variables were recorded and analyzed.ResultsThree patients (2 male and 1 female), aged 68, 76, and 87 years were included; 3 lesions (2 hepato-cellular carcinoma and 1 metastasis from colorectal cancer) were treated. One patient required hepatic angiography. Cycles of apnea used to acquire CBCT images and to deploy the electrode lasted <120 s. Mean fluoroscopic time needed to deploy the electrode was 36.6 ± 5.7 min. Mean overall procedural time was 66.0 ± 22.9 min. No peri- or post-procedural complications were noted. No cases of incomplete ablation were noted at 1-month follow-up.ConclusionPercutaneous CBCT-guided liver RFA with or without arterial hepatic angiography is technically feasible.

  13. Simple spherical ablative-implosion model

    SciTech Connect

    Mayer, F.J.; Steele, J.T.; Larsen, J.T.

    1980-06-23

    A simple model of the ablative implosion of a high-aspect-ratio (shell radius to shell thickness ratio) spherical shell is described. The model is similar in spirit to Rosenbluth's snowplow model. The scaling of the implosion time was determined in terms of the ablation pressure and the shell parameters such as diameter, wall thickness, and shell density, and compared these to complete hydrodynamic code calculations. The energy transfer efficiency from ablation pressure to shell implosion kinetic energy was examined and found to be very efficient. It may be possible to attach a simple heat-transport calculation to our implosion model to describe the laser-driven ablation-implosion process. The model may be useful for determining other energy driven (e.g., ion beam) implosion scaling.

  14. 2D simulations of transport dynamics during tokamak fuelling by supersonic molecular beam injection

    NASA Astrophysics Data System (ADS)

    Wang, Z. H.; Xu, X. Q.; Xia, T. Y.; Rognlien, T. D.

    2014-04-01

    Time-dependent transport of both plasma and neutrals is simulated during supersonic molecular beam injection (SMBI) yielding the evolution of edge plasma and neutral profiles. The SMBI model is included as a module, called trans-neut, within the original BOUT++ boundary plasma turbulence code. Results of calculations are reported for the realistic divertor geometry of the HL-2A tokamak. The model can also be used to study the effect of gas puffing. A seven-field fluid model couples plasma density, heat, and momentum transport equations together with neutral density and momentum transport equations for both molecules and atoms. Collisional interactions between molecules, atoms, and plasma include dissociation, ionization, recombination and charge-exchange effects. Sheath boundary conditions and particle recycling are applied at both the wall and the divertor plates. A localized boundary condition of constant molecular flux (product of density times speed) is applied at the outermost flux surface to model the SMBI. Steady state profiles with and without particle recycling are achieved before SMBI. During SMBI, the simulation shows that neutrals can penetrate several centimetres inside the last closed (magnetic) flux surface (LCFS). Along the SMBI path, plasma density increases while plasma temperature decreases. The molecule penetration depth depends on both the SMBI flux and the initial plasma density and temperature along its path. As the local plasma density increases substantially, molecule and atom penetration depths decrease due to their higher dissociation and ionization rates if the electron temperature does not drop too low. Dynamic poloidal spreading of the enhanced plasma density region is observed due to rapid ion flow along the magnetic field (parallel) driven by a parallel pressure asymmetry during SMBI. Profile relaxation in the radial and poloidal directions is simulated after SMBI termination, showing that the plasma returns to pre-SMBI conditions on

  15. A study of mixed group-V nitrides grown by gas-source molecular beam epitaxy using a nitrogen radical beam source

    SciTech Connect

    Bi, W.G.; Tu, C.W.; Mathes, D.; Hull, R.

    1997-12-31

    The authors report a study of N incorporation in GaAs and InP by gas-source molecular beam epitaxy using a N radical beam source. For GaNAs grown at high temperatures, phase separation was observed, as evidenced from the formation of cubic GaN aside from GaNAs. By lowering the growth temperature, however, GaNAs alloys with N as high as 14.8% have been obtained without showing any phase separation. For InNP, no phase separation was observed in the temperature range studied (310--420 C). Contrary to GaNAs, incorporating N in InP is very difficult, with only less than 1% N being achieved. Optical absorption measurement reveals strong red shift of bandgap energy with direct-bandgap absorption. However, no semimetallic region seems to exist for GaNAs and a composition, dependent bowing parameter has been observed.

  16. The supersonic molecular beam injector as a reliable tool for plasma fueling and physics experiment on HL-2A

    NASA Astrophysics Data System (ADS)

    Chen, C. Y.; Yu, D. L.; Feng, B. B.; Yao, L. H.; Song, X. M.; Zang, L. G.; Gao, X. Y.; Yang, Q. W.; Duan, X. R.

    2016-09-01

    On HL-2A tokamak, supersonic molecular beam injection (SMBI) has been developed as a routine refueling method. The key components of the system are an electromagnetic valve and a conic nozzle. The valve and conic nozzle are assembled to compose the simplified Laval nozzle for generating the pulsed beam. The appurtenance of the system includes the cooling system serving the cooled SMBI generation and the in situ calibration component for quantitative injection. Compared with the conventional gas puffing, the SMBI features prompt response and larger fueling flux. These merits devote the SMBI a good fueling method, an excellent plasma density feedback control tool, and an edge localized mode mitigation resource.

  17. Thin film growth of CaFe2As2 by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Hatano, T.; Kawaguchi, T.; Fujimoto, R.; Nakamura, I.; Mori, Y.; Harada, S.; Ujihara, T.; Ikuta, H.

    2016-01-01

    Film growth of CaFe2As2 was realized by molecular beam epitaxy on six different substrates that have a wide variation in the lattice mismatch to the target compound. By carefully adjusting the Ca-to-Fe flux ratio, we obtained single-phase thin films for most of the substrates. Interestingly, an expansion of the CaFe2As2 lattice to the out-of-plane direction was observed for all films, even when an opposite strain was expected. A detailed microstructure observation of the thin film grown on MgO by transmission electron microscope revealed that it consists of cube-on-cube and 45°-rotated domains. The latter domains were compressively strained in plane, which caused a stretching along the c-axis direction. Because the domains were well connected across the boundary with no appreciable discontinuity, we think that the out-of-plane expansion in the 45°-rotated domains exerted a tensile stress on the other domains, resulting in the unexpectedly large c-axis lattice parameter, despite the apparently opposite lattice mismatch.

  18. Relevant characteristics of undoped GaMnN grown by using molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lee, J. W.; Shon, Yoon; Subramaniam, N. G.; Park, C. S.; Kim, E. K.; Im, Hyunsik; Kim, H. S.

    2015-08-01

    GaN:Mn epilayers were grown on Al2O3 substrate by using molecular beam epitaxy (MBE). Xray diffraction (XRD) data showed intrinsic GaMnN and precipitates including MnGa and MnN. PL transitions (e, Mn) and (D, Mn) related to Mn were remarkably activated. Clear ferromagnetic hysteresis loops were obtained in both samples, which means a good formation of ferromagnetic coupling. The M-T curves revealed a curie temperature ( T c ) of 140 ~ 170 K which is intrinsic to GaMnN and a Tc of above 300 K which is due to the MnGa and the MnN precipitates. The samples clearly displayed a magnetic resonance at a field of around 200 - 400 mT. Electron spin resonance (ESR) data showed that the shift of (H center ) ( i. e., H center = 337 - H center [mT]) were greater than 20 mT for samples, and the appearance of a Hcenter with a positive H center is indicative of the samples having obvious ferromagnetism. The incorporated Mn ions are in a 2+ ionic state ( i. e., Mn2+) because Mn2+ with a spin state of S = 5/2 typically exhibits a magnetic resonance with g ≈ 2 when Mn is doped into semiconductors.

  19. Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Zaunbrecher, Katherine N.; Kuciauskas, Darius; Swartz, Craig H.; Dippo, Pat; Edirisooriya, Madhavie; Ogedengbe, Olanrewaju S.; Sohal, Sandeep; Hancock, Bobby L.; LeBlanc, Elizabeth G.; Jayathilaka, Pathiraja A. R. D.; Barnes, Teresa M.; Myers, Thomas H.

    2016-08-01

    Heterostructures with CdTe and CdTe1-xSex (x ˜ 0.01) absorbers between two wider-band-gap Cd1-xMgxTe barriers (x ˜ 0.25-0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of confocal photoluminescence (PL), time-resolved PL, and low-temperature PL emission spectroscopy, two extended defect types were identified and the impact of these defects on charge-carrier recombination was analyzed. The dominant defects identified by confocal PL were dislocations in samples grown on (211)B CdTe substrates and crystallographic twinning-related defects in samples on (100)-oriented InSb substrates. Low-temperature PL shows that twin-related defects have a zero-phonon energy of 1.460 eV and a Huang-Rhys factor of 1.50, while dislocation-dominated samples have a 1.473-eV zero-phonon energy and a Huang-Rhys factor of 1.22. The charge carrier diffusion length near both types of defects is ˜6 μm, suggesting that recombination is limited by diffusion dynamics. For heterostructures with a low concentration of extended defects, the bulk lifetime was determined to be 2.2 μs with an interface recombination velocity of 160 cm/s and an estimated radiative lifetime of 91 μs.

  20. Planning combined treatments of external beam radiation therapy and molecular radiotherapy.

    PubMed

    Cremonesi, Marta; Ferrari, Mahila; Botta, Francesca; Guerriero, Francesco; Garibaldi, Cristina; Bodei, Lisa; De Cicco, Concetta; Grana, Chiara Maria; Pedroli, Guido; Orecchia, Roberto

    2014-08-01

    Molecular radiotherapy (MRT) with radiolabeled molecules has being constantly evolving, leading to notable results in cancer treatment. In some cases, the absorbed doses delivered to tumors by MRT are sufficient to obtain complete responses; in other cases, instead, to be effective, MRT needs to be combined with other therapeutic approaches. Recently, several studies proposed the combination of MRT with external beam radiation therapy (EBRT). Some describe the theoretical basis within radiobiological models, others report the results of clinical phase I-II studies aimed to assess the feasibility and tolerability. The latter includes the treatment of various tumors, such as meningiomas, paragangliomas, non-Hodgkin's lymphomas, bone, brain, hepatic, and breast lesions. The underlying principle of combined MRT and EBRT is the possibility of exploiting the full potential of each modality, given the different organs at risk. Target tissues can indeed receive a higher irradiation, while respecting the threshold limits of more than one critical tissue. Nevertheless, clinical trials are empirical and optimization is still a theoretical issue. This article describes the state of the art of combined MRT and EBRT regarding the rationale and the results of clinical studies, with special focus on the possibility of treatment improvement.

  1. The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy

    SciTech Connect

    Vogt, Patrick; Bierwagen, Oliver

    2015-02-23

    The hetero-epitaxial growth of the n-type semiconducting oxides β-Ga{sub 2}O{sub 3}, In{sub 2}O{sub 3}, and SnO{sub 2} on c- and r-plane sapphire was performed by plasma-assisted molecular beam epitaxy. The growth-rate and desorbing flux from the substrate were measured in-situ under various oxygen to metal ratios by laser reflectometry and quadrupole mass spectrometry, respectively. These measurements clarified the role of volatile sub-oxide formation (Ga{sub 2}O, In{sub 2}O, and SnO) during growth, the sub-oxide stoichiometry, and the efficiency of oxide formation for the three oxides. As a result, the formation of the sub-oxides decreased the growth-rate under metal-rich growth conditions and resulted in etching of the oxide film by supplying only metal flux. The flux ratio for the exclusive formation of the sub-oxide (e.g., the p-type semiconductor SnO) was determined, and the efficiency of oxide formation was found to be the highest for SnO{sub 2}, somewhat lower for In{sub 2}O{sub 3}, and the lowest for Ga{sub 2}O{sub 3}. Our findings can be generalized to further oxides that possess related sub-oxides.

  2. Molecular-beam sampling study of extinguishment of methane-air flames by dry chemicals

    NASA Technical Reports Server (NTRS)

    Knuth, E. L.; Ni, W.-F.; Seeger, C.

    1982-01-01

    The use of Al2O3, NaHCO3, KHCO3, NH4H2PO4 and KCl powders for the inhibition of a methane/oxygen diffusion flame is studied through measurement of composition and temperature profiles, using a molecular beam mass spectrometer sampling system. In order to obtain significant inhibition without extinguishing the flame, a powder feeding rate of 2 mg/liter of gas was used for KCl and Al2O3, and of 3 mg/liter of gas for the remaining powders. CH4, O2, N2, H2O and CO2 concentrations were measured by the mass spectrometer, while temperature was measured by the time-of-flight technique. For the powder feeding rates used, Al2O3 was the least and KCl and NH2H4PO2 the most effective in reducing temperature; in reaction-inhibition effectiveness, Al2O3 was again lowest while KCl was superior to all others. Because the KCl concentration was only 2/3 that of NH4H2PO4, it is recommended as the most effective temperature reducer and reaction inhibitor.

  3. Comparisons between tokamak fueling of gas puffing and supersonic molecular beam injection in 2D simulations

    SciTech Connect

    Zhou, Y. L.; Wang, Z. H.; Xu, X. Q.; Li, H. D.; Feng, H.; Sun, W. G.

    2015-01-15

    Plasma fueling with high efficiency and deep injection is very important to enable fusion power performance requirements. It is a powerful and efficient way to study neutral transport dynamics and find methods of improving the fueling performance by doing large scale simulations. Two basic fueling methods, gas puffing (GP) and supersonic molecular beam injection (SMBI), are simulated and compared in realistic divertor geometry of the HL-2A tokamak with a newly developed module, named trans-neut, within the framework of BOUT++ boundary plasma turbulence code [Z. H. Wang et al., Nucl. Fusion 54, 043019 (2014)]. The physical model includes plasma density, heat and momentum transport equations along with neutral density, and momentum transport equations. Transport dynamics and profile evolutions of both plasma and neutrals are simulated and compared between GP and SMBI in both poloidal and radial directions, which are quite different from one and the other. It finds that the neutrals can penetrate about four centimeters inside the last closed (magnetic) flux surface during SMBI, while they are all deposited outside of the LCF during GP. It is the radial convection and larger inflowing flux which lead to the deeper penetration depth of SMBI and higher fueling efficiency compared to GP.

  4. Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament

    NASA Technical Reports Server (NTRS)

    Malik, R. J.; Nottenberg, R. N.; Schubert, E. F.; Walker, J. F.; Ryan, R. W.

    1988-01-01

    Carbon doping of GaAs grown by molecular beam epitaxy has been obtained for the first time by use of a heated graphite filament. Controlled carbon acceptor concentrations over the range of 10 to the 17th-10 to the 20th/cu cm were achieved by resistively heating a graphite filament with a direct current power supply. Capacitance-voltage, p/n junction and secondary-ion mass spectrometry measurements indicate that there is negligible diffusion of carbon during growth and with postgrowth rapid thermal annealing. Carbon was used for p-type doping in the base of Npn AlGaAs/GaAs heterojunction bipolar transistors. Current gains greater than 100 and near-ideal emitter heterojunctions were obtained in transistors with a carbon base doping of 1 x 10 to the 19th/cu cm. These preliminary results indicate that carbon doping from a solid graphite source may be an attractive substitute for beryllium, which is known to have a relatively high diffusion coefficient in GaAs.

  5. Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy.

    PubMed

    Summerfield, Alex; Davies, Andrew; Cheng, Tin S; Korolkov, Vladimir V; Cho, YongJin; Mellor, Christopher J; Foxon, C Thomas; Khlobystov, Andrei N; Watanabe, Kenji; Taniguchi, Takashi; Eaves, Laurence; Novikov, Sergei V; Beton, Peter H

    2016-01-01

    Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are highly strained. Topological defects in the moiré patterns are observed and attributed to the relaxation of graphene islands which nucleate at different sites and subsequently coalesce. In addition, cracks are formed leading to strain relaxation, highly anisotropic strain fields, and abrupt boundaries between regions with different moiré periods. These cracks can also be formed by modification of the layers with a local probe resulting in the contraction and physical displacement of graphene layers. The Raman spectra of regions with a large moiré period reveal split and shifted G and 2D peaks confirming the presence of strain. Our work demonstrates a new approach to the growth of epitaxial graphene and a means of generating and modifying strain in graphene.

  6. Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO{sub 3}

    SciTech Connect

    Prakash, Abhinav Dewey, John; Yun, Hwanhui; Jeong, Jong Seok; Mkhoyan, K. Andre; Jalan, Bharat

    2015-11-15

    Owing to its high room-temperature electron mobility and wide bandgap, BaSnO{sub 3} has recently become of significant interest for potential room-temperature oxide electronics. A hybrid molecular beam epitaxy (MBE) approach for the growth of high-quality BaSnO{sub 3} films is developed in this work. This approach employs hexamethylditin as a chemical precursor for tin, an effusion cell for barium, and a radio frequency plasma source for oxygen. BaSnO{sub 3} films were thus grown on SrTiO{sub 3} (001) and LaAlO{sub 3} (001) substrates. Growth conditions for stoichiometric BaSnO{sub 3} were identified. Reflection high-energy electron diffraction (RHEED) intensity oscillations, characteristic of a layer-by-layer growth mode were observed. A critical thickness of ∼1 nm for strain relaxation was determined for films grown on SrTiO{sub 3} using in situ RHEED. Scanning transmission electron microscopy combined with electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy confirmed the cube-on-cube epitaxy and composition. The importance of precursor chemistry is discussed in the context of the MBE growth of BaSnO{sub 3}.

  7. Impurity doping of HgTe--CdTe superlattices during growth by molecular-beam epitaxy

    SciTech Connect

    Wroge, M.L.; Peterman, D.J.; Feldman, B.J.; Morris, B.J.; Leopold, D.J.; Broerman, J.G.

    1989-03-01

    We demonstrate the use of In and Ag as n- and p-type dopants, respectively, to controllably dope (100)-oriented HgTe--CdTe superlattices during molecular-beam epitaxial (MBE) growth. When normalized by the superlattice growth rate, the low-temperature Hall-carrier concentrations of both In- and Ag-doped superlattices are shown to have an exponential dependence on the respective effusion-cell temperatures in the electron and hole concentration ranges of approx.10/sup 16/ to 10/sup 18/ cm/sup -3/ . The upper limit on the diffusion coefficient for In at the low MBE growth temperature of approx.160 /sup 0/C is determined to be 5 x 10/sup -15/ cm/sup 2/ /s by use of secondary-ion mass spectrometry. Hall-effect and current--voltage measurements verify that the combination of In and Ag doping allows the formation of p--n electrical junctions. These results provide the first evidence of p--n junction formation in a HgTe--CdTe superlattice.

  8. Growth and magnetic property of antiperovskite manganese nitride films doped with Cu by molecular beam epitaxy

    SciTech Connect

    Yu, Fengmei; Ren, Lizhu; Meng, Meng; Wang, Yunjia; Yang, Mei; Wu, Shuxiang; Li, Shuwei

    2014-04-07

    Manganese nitrides thin films on MgO (100) substrates with and without Cu-doping have been fabricated by plasma assisted molecular beam epitaxy. Antiperovskite compounds Mn{sub 3.6}Cu{sub 0.4}N have been grown in the case of Cu-doping, and the pure Mn{sub 3}N{sub 2} single crystal has been obtained without Cu-doping. The Mn{sub 3.6}Cu{sub 0.4}N exhibits ferrimagnetism, and the magnetization of Mn{sub 3.6}Cu{sub 0.4}N increases upon the temperature decreasing from 300 K to 5 K, similar to Mn{sub 4}N. The exchange bias (EB) effects emerge in the Mn{sub 3.6}Cu{sub 0.4}N films. The EB behavior is originated from the interfaces between ferrimagnetic Mn{sub 3.6}Cu{sub 0.4}N and antiferromagnetic metal Mn, which is verified to be formed by the data of x-ray photoelectron spectroscopy. The present results not only provide a strategy for producing functional antiperovskite manganese nitrides, but also shed promising light on fabricating the exchange bias part of spintronic devices.

  9. GaAs surface cleaning by thermal oxidation and sublimation in molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Saito, Junji; Nanbu, Kazuo; Ishikawa, Tomonori; Kondo, Kazuo

    1988-01-01

    GaAs surface cleaning by thermal oxidation and sublimation prior to molecular-beam-epitaxial growth has been investigated as a means of reducing the carrier depletion at the substrate and epitaxial layer interface. The carrier depletion between the substrate and epitaxial films, measured by a C-V carrier profiling technique, was shown to decrease significantly with an increase in the thickness of the thermal oxidation. The concentration of carbon contamination near the substrate-epitaxial interface was measured using secondary ion mass spectroscopy. The carbon concentration correlated very well with the carrier depletion. Therefore, the main origin of the carrier depletion is believed to be the carbon concentration of the initial growth surface. Based on these results, the thermal oxidation and sublimation of a semi-insulating GaAs substrate was successfully applied to improve the mobility and sheet concentration of the two-dimensional electron gas in selectively doped GaAs/N-Al0.3Ga0.7As heterostructures with very thin GaAs buffer layers.

  10. InGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry study

    NASA Astrophysics Data System (ADS)

    D'Costa, Vijay Richard; Khai Loke, Wan; Zhou, Qian; Fatt Yoon, Soon; Yeo, Yee-Chia

    2016-03-01

    We investigated the optical properties of disordered In0.52Ga0.48P alloys by spectroscopic ellipsometry in the far-infrared to ultraviolet energy range (0.037-5.1 eV). The alloys were grown on Ge (100) substrate by solid-source molecular beam epitaxy. The far-infrared dielectric function reveals two absorption peaks that can be attributed to InP- and GaP-like vibrational modes. The visible-UV dielectric function of In0.52Ga0.48P alloys nearly lattice-matched to Ge shows the critical points E 0, E 1, and E 2, energies of which are determined using a derivative analysis. A weak transition that can be identified as the E 1 + Δ1 critical point is revealed. The vibrational frequencies and the transition energies in In0.52Ga0.48P are lower relative to In0.49Ga0.51P lattice-matched to GaAs. The downward shifts in E 0 and phonons can be estimated using the compositional dependence of E 0 and phonons of bulk alloys.

  11. InAsPSb quaternary alloy grown by gas source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Tsai, Gene; Wang, De-Lun; Wu, Chia-En; Wu, Chen-Jun; Lin, Yan-Ting; Lin, Hao-Hsiung

    2007-04-01

    Quaternary InAs xP ySb 1-x-y alloys nearly lattice-matched to InAs substrates have been successfully grown by gas source molecular beam epitaxy (GSMBE) with the composition covering the immiscibility region. Through high resolution X-ray diffractometry, we observed the compositional inhomogeneity in these alloys. Enhancement in the As incorporation in the growth can not only narrow the inhomogeneous broadening but also improve the surface morphology. Carrier recombination in band-tail states caused by the compositional inhomogeneity is attributed to the low-temperature PL emission in these samples. The PL peak energy is thus lower than the predicted band-gap energy. The energy discrepancy can be as large as 0.26 eV, and decreases dramatically to 36 meV as the As mole fraction increases to 0.681. For the high As mole fraction sample, band-to-band recombination is observed as the temperature is higher than 100 K.

  12. Growth of very large InN microcrystals by molecular beam epitaxy using epitaxial lateral overgrowth

    SciTech Connect

    Kamimura, J.; Kishino, K.; Kikuchi, A.

    2015-02-28

    Very thick InN (∼40 μm) was grown by molecular beam epitaxy using the epitaxial lateral overgrowth (ELO) technique. In some regions, the ELO of InN was observed as expected, indicating an important step toward fabricating quasi-bulk InN substrates. Interestingly, most parts of the sample consist of large flat-topped microcrystals and well-faceted microstructures. This is likely due to local growth condition variations during ELO, which is supported by an experiment where ELO of InN was performed on a substrate with various stripe mask patterns. TEM characterization of a flat top InN microcrystal revealed few stacking faults and only related threading dislocations. Defect-free small faceted microcrystals were also observed. The thick InN crystals show a narrow photoluminescence spectrum with a peak at 0.679 eV and linewidth of 16.8 meV at 4 K.

  13. NO-assisted molecular-beam epitaxial growth of nitrogen substituted EuO

    NASA Astrophysics Data System (ADS)

    Wicks, R.; Altendorf, S. G.; Caspers, C.; Kierspel, H.; Sutarto, R.; Tjeng, L. H.; Damascelli, A.

    2012-04-01

    We have investigated a method for substituting oxygen with nitrogen in EuO thin films, which is based on molecular beam epitaxy distillation with NO gas as the oxidizer. By varying the NO gas pressure, we produce crystalline, epitaxial EuO1 -xNx films with good control over the films' nitrogen concentration. In situ x-ray photoemission spectroscopy reveals that nitrogen substitution is connected to the formation Eu3+4f6 and a corresponding decrease in the number of Eu2+4f7, indicating that nitrogen is being incorporated in its 3- oxidation state. While small amounts of Eu3+ in over-oxidized Eu1-δO thin films lead to a drastic suppression of the ferromagnetism, the formation of Eu3+ in EuO1-xNx still allows the ferromagnetic phase to exist with an unaffected Tc, thus providing an ideal model system to study the interplay between the magnetic f7 (J = 7/2) and the non-magnetic f6 (J = 0) states close to the Fermi level.

  14. Comparisons between tokamak fueling of gas puffing and supersonic molecular beam injection in 2D simulations

    SciTech Connect

    Zhou, Y. L.; Wang, Z. H.; Xu, X. Q.; Li, H. D.; Feng, H.; Sun, W. G.

    2015-01-09

    Plasma fueling with high efficiency and deep injection is very important to enable fusion power performance requirements. It is a powerful and efficient way to study neutral transport dynamics and find methods of improving the fueling performance by doing large scale simulations. Furthermore, two basic fueling methods, gas puffing (GP) and supersonic molecular beam injection (SMBI), are simulated and compared in realistic divertor geometry of the HL-2A tokamak with a newly developed module, named trans-neut, within the framework of BOUT++ boundary plasma turbulence code [Z. H. Wang et al., Nucl. Fusion 54, 043019 (2014)]. The physical model includes plasma density, heat and momentum transport equations along with neutral density, and momentum transport equations. In transport dynamics and profile evolutions of both plasma and neutrals are simulated and compared between GP and SMBI in both poloidal and radial directions, which are quite different from one and the other. It finds that the neutrals can penetrate about four centimeters inside the last closed (magnetic) flux surface during SMBI, while they are all deposited outside of the LCF during GP. Moreover, it is the radial convection and larger inflowing flux which lead to the deeper penetration depth of SMBI and higher fueling efficiency compared to GP.

  15. Photodiode properties of molecular beam epitaxial InSb on a heavily doped substrate

    NASA Astrophysics Data System (ADS)

    Sun, Weiguo; Fan, Huitao; Peng, Zhenyu; Zhang, Liang; Zhang, Xiaolei; Zhang, Lei; Lu, Zhengxiong; Si, Junjie; Emelyanov, E.; Putyato, M.; Semyagin, B.; Pchelyakov, O.; Preobrazhenskii, V.

    2014-01-01

    Photodiodes of InSb were fabricated on an epitaxial layer grown using molecular beam epitaxy (MBE). Thermal cleaning of the InSb (0 0 1) substrate surface, 2° towards the (1 1 1) B plane, was performed to remove the oxide. Photodiode properties of МВЕ-formed epitaxial InSb were demonstrated. Zero-bias resistance area product (R0A) measurements were taken at 80 K under room temperature background for a pixel size of 100 μm × 100 μm. Values were as high as 4.36 × 104 Ω/cm2, and the average value of R0A was 1.66 × 104 Ω/cm2. The peak response was 2.44 (A/W). The epitaxial InSb photodiodes were fabricated using the same process as bulk crystal InSb diodes with the exception of the junction formation method. These values are comparable to the properties of bulk crystal InSb photodiodes.

  16. HgCdTe Research at FFI: Molecular Beam Epitaxy Growth and Characterization

    NASA Astrophysics Data System (ADS)

    Haakenaasen, R.; Selvig, E.; Tonheim, C. R.; Kongshaug, K. O.; Lorentzen, T.; Trosdahl-Iversen, L.; Andersen, J. B.; Gundersen, P.

    2010-07-01

    This paper presents results from recent work on molecular beam epitaxy growth of HgCdTe at the Norwegian Defence Research Establishment (FFI), including studies of material properties and fabrication of photodiodes and nanostructures. Systematic studies of defect morphology in HgTe and Hg1- x Cd x Te have revealed that there is a minimum in the area covered by defects just below the onset of Te precipitation. The shape and density of microvoids in HgTe can be used to determine the deviation from the optimal growth temperature. This can be further related to the optimal growth temperature of Hg1- x Cd x Te with any Cd mole fraction by thermodynamic calculations. A mechanism for the formation of microvoids and needles has been presented. Photoluminescence (PL) has been used to study layers without doping and with Hg vacancy, Ag, and In doping. Planar photodiodes with high dynamic resistance and good quantum efficiency were fabricated by ion-milling vacancy-doped mid-wave and long-wave infrared layers. Quantum wells (QWs) with good crystallinity and high PL light output have been grown. Surface patterning has been found to enhance light emission from HgCdTe thin-film and QW samples by ˜30%. Single-crystal HgTe and segmented HgTe/Te nanowires have been grown, and the resistivity of the nanowires has been measured by conductive atomic force microscopy (AFM), where the AFM tip has been used as a mobile electrode.

  17. Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy

    PubMed Central

    2012-01-01

    GaN nanowall network was epitaxially grown on Si (111) substrate by molecular beam epitaxy. GaN nanowalls overlap and interlace with one another, together with large numbers of holes, forming a continuous porous GaN nanowall network. The width of the GaN nanowall can be controlled, ranging from 30 to 200 nm by adjusting the N/Ga ratio. Characterization results of a transmission electron microscope and X-ray diffraction show that the GaN nanowall is well oriented along the C axis. Strong band edge emission centered at 363 nm is observed in the spectrum of room temperature photoluminescence, indicating that the GaN nanowall network is of high quality. The sheet resistance of the Si-doped GaN nanowall network along the lateral direction was 58 Ω/. The conductive porous nanowall network can be useful for integrated gas sensors due to the large surface area-to-volume ratio and electrical conductivity along the lateral direction by combining with Si micromachining. PMID:23270331

  18. Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy.

    PubMed

    Zhong, Aihua; Hane, Kazuhiro

    2012-01-01

    GaN nanowall network was epitaxially grown on Si (111) substrate by molecular beam epitaxy. GaN nanowalls overlap and interlace with one another, together with large numbers of holes, forming a continuous porous GaN nanowall network. The width of the GaN nanowall can be controlled, ranging from 30 to 200 nm by adjusting the N/Ga ratio. Characterization results of a transmission electron microscope and X-ray diffraction show that the GaN nanowall is well oriented along the C axis. Strong band edge emission centered at 363 nm is observed in the spectrum of room temperature photoluminescence, indicating that the GaN nanowall network is of high quality. The sheet resistance of the Si-doped GaN nanowall network along the lateral direction was 58 Ω/. The conductive porous nanowall network can be useful for integrated gas sensors due to the large surface area-to-volume ratio and electrical conductivity along the lateral direction by combining with Si micromachining. PMID:23270331

  19. Buried-heterostructure quantum-cascade laser overgrown by gas-source molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Chashnikova, M.; Monastyrskyi, G.; Aleksandrova, A.; Klinkmüller, M.; Semtsiv, M. P.; Masselink, W. T.

    2012-05-01

    We describe the realization of buried-heterostructure quantum-cascade lasers (QCLs) using gas-source molecular beam epitaxy both for the growth of the active region as well as for the regrowth of InP:Fe. The regrowth of the semi-insulating InP:Fe layer was carried out at 470 °C, which is more than 100 °C below the standard growth temperature during metal-organic vapor-phase epitaxy, the standard method for laser overgrowth. The electrical resistivity of the InP:Fe insulation layer, measured in test samples grown on (001) InP, is as large as 2×108Ωcm. High-resistivity InP:Fe is overgrown non-selectively over the etched laser ridge, followed by the top contact alloyed through it to the active region. The processed quantum-cascade lasers show no evidence of parallel leakage current and exhibit lower threshold current density than lasers using SiO2 as an insulator. The ability to fabricate buried heterostructure lasers without exceeding 600 °C is important for strain-compensated AlAs-InGaAs quantum cascade lasers with large internal strain because these devices do not typically withstand temperatures used to grow InP:Fe using vapor-phase epitaxy.

  20. Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Brahlek, Matthew; Zhang, Lei; Zhang, Hai-Tian; Lapano, Jason; Dedon, Liv R.; Martin, Lane W.; Engel-Herbert, Roman

    2016-09-01

    Requisite to growing stoichiometric perovskite thin films of the solid-solution A'1-xAxBO3 by hybrid molecular beam epitaxy is understanding how the growth conditions interpolate between the end members A'BO3 and ABO3, which can be grown in a self-regulated fashion, but under different conditions. Using the example of La1-xSrxVO3, the two-dimensional growth parameter space that is spanned by the flux of the metal-organic precursor vanadium oxytriisopropoxide and composition, x, was mapped out. The evolution of the adsorption-controlled growth window was obtained using a combination of X-ray diffraction, atomic force microscopy, reflection high-energy electron-diffraction (RHEED), and Rutherford backscattering spectroscopy. It is found that the stoichiometric growth conditions can be mapped out quickly with a single calibration sample using RHEED. Once stoichiometric conditions have been identified, the out-of-plane lattice parameter can be utilized to precisely determine the composition x. This strategy enables the identification of growth conditions that allow the deposition of stoichiometric perovskite oxide films with random A-site cation mixing, which is relevant to a large number of perovskite materials with interesting properties, e.g., high-temperature superconductivity and colossal magnetoresistance, that emerge in solid solution A'1-xAxBO3.

  1. Hollow-anode plasma source for molecular beam epitaxy of gallium nitride

    SciTech Connect

    Anders, A.; Newman, N.; Rubin, M.; Dickinson, M.; Thomson, A.; Jones, E.; Phatak, P.; Gassmann, A.

    1995-09-01

    GaN films have been grown by molecular beam epitaxy (MBE) using a hollow-anode nitrogen plasma source. The source was developed to minimize defect formation as a result of contamination and ion damage. The hollow-anode discharge is a special form of glow discharge with very small anode area. A positive anode voltage drop of 30--40 V and an increased anode sheath thickness leads to ignition of a relatively dense plasma in front of the anode hole. Driven by the pressure gradient, the ``anode`` plasma forms a bright plasma jet streaming with supersonic velocity towards the substrate. Films of GaN have been grown on (0001) SiC and (0001) Al{sub 2}O{sub 3} at a temperature from 600--800 C. The films were investigated by photoluminescence, cathodoluminescence, X-ray diffraction, and X-ray fluorescence. The film with the highest structural quality had a rocking curve with 5 arcmin, the lowest reported value for MBE growth to date.

  2. Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Dangwal Pandey, A.; Krausert, K.; Franz, D.; Grânäs, E.; Shayduk, R.; Müller, P.; Keller, T. F.; Noei, H.; Vonk, V.; Stierle, A.

    2016-08-01

    Heteroepitaxial iridium thin films were deposited on (0001) sapphire substrates by means of molecular beam epitaxy, and subsequently, one monolayer of graphene was synthesized by chemical vapor deposition. The influence of the growth parameters on the quality of the Ir films, as well as of graphene, was investigated systematically by means of low energy electron diffraction, x-ray reflectivity, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Our study reveals (111) oriented iridium films with high crystalline quality and extremely low surface roughness, on which the formation of large-area epitaxial graphene is achieved. The presence of defects, like dislocations, twins, and 30° rotated domains in the iridium films is also discussed. The coverage of graphene was found to be influenced by the presence of 30° rotated domains in the Ir films. Low iridium deposition rates suppress these rotated domains and an almost complete coverage of graphene was obtained. This synthesis route yields inexpensive, air-stable, and large-area graphene with a well-defined orientation, making it accessible to a wider community of researchers for numerous experiments or applications, including those which use destructive analysis techniques or irreversible processes. Moreover, this approach can be used to tune the structural quality of graphene, allowing a systematic study of the influence of defects in various processes like intercalation below graphene.

  3. Silicon sample holder for molecular beam epitaxy on pre-fabricated integrated circuits

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor); Grunthaner, Paula J. (Inventor); Grunthaner, Frank J. (Inventor)

    1994-01-01

    The sample holder of the invention is formed of the same semiconductor crystal as the integrated circuit on which the molecular beam expitaxial process is to be performed. In the preferred embodiment, the sample holder comprises three stacked micro-machined silicon wafers: a silicon base wafer having a square micro-machined center opening corresponding in size and shape to the active area of a CCD imager chip, a silicon center wafer micro-machined as an annulus having radially inwardly pointing fingers whose ends abut the edges of and center the CCD imager chip within the annulus, and a silicon top wafer micro-machined as an annulus having cantilevered membranes which extend over the top of the CCD imager chip. The micro-machined silicon wafers are stacked in the order given above with the CCD imager chip centered in the center wafer and sandwiched between the base and top wafers. The thickness of the center wafer is about 20% less than the thickness of the CCD imager chip. Preferably, four titanium wires, each grasping the edges of the top and base wafers, compress all three wafers together, flexing the cantilever fingers of the top wafer to accommodate the thickness of the CCD imager chip, acting as a spring holding the CCD imager chip in place.

  4. InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Gacevic, Z.; Fernandez-Garrido, S.; Calleja, E.; Estrade, S.

    2010-12-01

    We report on molecular beam epitaxy growth and characterization of ten-period lattice-matched InAlN/GaN distributed Bragg reflectors (DBRs), with peak reflectivity centered around 400 nm. Thanks to the well tuned ternary alloy composition, crack-free surfaces have been obtained, as confirmed by both optical and transmission electron microscopy (TEM). Their good periodicity and well-defined interfaces have been confirmed by both x-ray diffraction and TEM measurements. Peak reflectivity values as high as 60% with stop bands of 30 nm have been demonstrated. Optical measurements revealed that discrepancy between the obtained (60%) and the theoretically expected ({approx}75%) reflectivity is a consequence of significant residual absorption ({approx}35%). TEM measurements revealed the coexistence of zinc-blende and wurtzite phases, as well as planar defects, mainly in GaN. These defects are suggested as the potential source of the undesired absorption and/or scattering effects that lowered the DBRs' peak reflectivity.

  5. Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy

    PubMed Central

    2014-01-01

    We report the self-catalysed growth of InAs nanowires (NWs) on graphite thin films using molecular beam epitaxy via a droplet-assisted technique. Through optimising metal droplets, we obtained vertically aligned InAs NWs with highly uniform diameter along their entire length. In comparison with conventional InAs NWs grown on Si (111), the graphite surface led to significant effects on the NWs geometry grown on it, i.e. larger diameter, shorter length with lower number density, which were ascribed to the absence of dangling bonds on the graphite surface. The axial growth rate of the NWs has a strong dependence on growth time, which increases quickly in the beginning then slows down after the NWs reach a length of approximately 0.8 μm. This is attributed to the combined axial growth contributions from the surface impingement and sidewall impingement together with the desorption of adatoms during the diffusion. The growth of InAs NWs on graphite was proposed following a vapour-solid mechanism. High-resolution transmission electron microscopy reveals that the NW has a mixture of pure zinc-blende and wurtzite insertions. PMID:25024683

  6. Dynamic grazing incidence fast atom diffraction during molecular beam epitaxial growth of GaAs

    SciTech Connect

    Atkinson, P. Eddrief, M.; Etgens, V. H.; Khemliche, H. Debiossac, M.; Mulier, M.; Lalmi, B.; Roncin, P.; Momeni, A.

    2014-07-14

    A Grazing Incidence Fast Atom Diffraction (GIFAD) system has been mounted on a commercial molecular beam epitaxy chamber and used to monitor GaAs growth in real-time. In contrast to the conventionally used Reflection High Energy Electron Diffraction, all the GIFAD diffraction orders oscillate in phase, with the change in intensity related to diffuse scattering at step edges. We show that the scattered intensity integrated over the Laue circle is a robust method to monitor the periodic change in surface roughness during layer-by-layer growth, with oscillation phase and amplitude independent of incidence angle and crystal orientation. When there is a change in surface reconstruction at the start of growth, GIFAD intensity oscillations show that there is a corresponding delay in the onset of layer-by-layer growth. In addition, changes in the relative intensity of different diffraction orders have been observed during growth showing that GIFAD has the potential to provide insight into the preferential adatom attachment sites on the surface reconstruction during growth.

  7. Molecular Beam Epitaxy Growth of High Crystalline Quality LiNbO3

    NASA Astrophysics Data System (ADS)

    Tellekamp, M. Brooks; Shank, Joshua C.; Goorsky, Mark S.; Doolittle, W. Alan

    2016-10-01

    Lithium niobate is a multi-functional material with wide reaching applications in acoustics, optics, and electronics. Commercial applications for lithium niobate require high crystalline quality currently limited to bulk and ion sliced material. Thin film lithium niobate is an attractive option for a variety of integrated devices, but the research effort has been stagnant due to poor material quality. Both lattice matched and mismatched lithium niobate are grown by molecular beam epitaxy and studied to understand the role of substrate and temperature on nucleation conditions and material quality. Growth on sapphire produces partially coalesced columnar grains with atomically flat plateaus and no twin planes. A symmetric rocking curve shows a narrow linewidth with a full width at half-maximum (FWHM) of 8.6 arcsec (0.0024°), which is comparable to the 5.8 arcsec rocking curve FWHM of the substrate, while the film asymmetric rocking curve is 510 arcsec FWHM. These values indicate that the individual grains are relatively free of long-range disorder detectable by x-ray diffraction with minimal measurable tilt and twist and represents the highest structural quality epitaxial material grown on lattice mismatched sapphire without twin planes. Lithium niobate is also grown on lithium tantalate producing high quality coalesced material without twin planes and with a symmetric rocking curve of 193 arcsec, which is nearly equal to the substrate rocking curve of 194 arcsec. The surface morphology of lithium niobate on lithium tantalate is shown to be atomically flat by atomic force microscopy.

  8. Comparisons between tokamak fueling of gas puffing and supersonic molecular beam injection in 2D simulations

    DOE PAGES

    Zhou, Y. L.; Wang, Z. H.; Xu, X. Q.; Li, H. D.; Feng, H.; Sun, W. G.

    2015-01-09

    Plasma fueling with high efficiency and deep injection is very important to enable fusion power performance requirements. It is a powerful and efficient way to study neutral transport dynamics and find methods of improving the fueling performance by doing large scale simulations. Furthermore, two basic fueling methods, gas puffing (GP) and supersonic molecular beam injection (SMBI), are simulated and compared in realistic divertor geometry of the HL-2A tokamak with a newly developed module, named trans-neut, within the framework of BOUT++ boundary plasma turbulence code [Z. H. Wang et al., Nucl. Fusion 54, 043019 (2014)]. The physical model includes plasma density,more » heat and momentum transport equations along with neutral density, and momentum transport equations. In transport dynamics and profile evolutions of both plasma and neutrals are simulated and compared between GP and SMBI in both poloidal and radial directions, which are quite different from one and the other. It finds that the neutrals can penetrate about four centimeters inside the last closed (magnetic) flux surface during SMBI, while they are all deposited outside of the LCF during GP. Moreover, it is the radial convection and larger inflowing flux which lead to the deeper penetration depth of SMBI and higher fueling efficiency compared to GP.« less

  9. Electrical and optical properties of Fe doped AlGaN grown by molecular beam epitaxy

    SciTech Connect

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Dabiran, A. M.; Chow, P. P.; Wowchak, A. M.; Pearton, S. J.

    2010-01-15

    Electrical and optical properties of AlGaN grown by molecular beam epitaxy were studied in the Al composition range 15%-45%. Undoped films were semi-insulating, with the Fermi level pinned near E{sub c}-0.6-0.7 eV. Si doping to (5-7)x10{sup 17} cm{sup -3} rendered the 15% Al films conducting n-type, but a large portion of the donors were relatively deep (activation energy 95 meV), with a 0.15 eV barrier for capture of electrons giving rise to strong persistent photoconductivity (PPC) effects. The optical threshold of this effect was {approx}1 eV. Doping with Fe to a concentration of {approx}10{sup 17} cm{sup -3} led to decrease in concentration of uncompensated donors, suggesting compensation by Fe acceptors. Addition of Fe strongly suppressed the formation of PPC-active centers in favor of ordinary shallow donors. For higher Al compositions, Si doping of (5-7)x10{sup 17} cm{sup -3} did not lead to n-type conductivity. Fe doping shifted the bandedge luminescence by 25-50 meV depending on Al composition. The dominant defect band in microcathodoluminescence spectra was the blue band near 3 eV, with the energy weakly dependent on composition.

  10. Magnetotransport in MgO-based magnetic tunnel junctions grown by molecular beam epitaxy (invited)

    SciTech Connect

    Andrieu, S. Bonell, F.; Hauet, T.; Montaigne, F.; Lefevre, P.; Bertran, F.

    2014-05-07

    The strong impact of molecular beam epitaxy growth and Synchrotron Radiation characterization tools in the understanding of fundamental issues in nanomagnetism and spintronics is illustrated through the example of fully epitaxial MgO-based Magnetic Tunnel Junctions (MTJs). If ab initio calculations predict very high tunnel magnetoresistance (TMR) in such devices, some discrepancy between theory and experiments still exists. The influence of imperfections in real systems has thus to be considered like surface contaminations, structural defects, unexpected electronic states, etc. The influence of possible oxygen contamination at the Fe/MgO(001) interface is thus studied, and is shown to be not so detrimental to TMR as predicted by ab initio calculations. On the contrary, the decrease of dislocations density in the MgO barrier of MTJs using Fe{sub 1−x}V{sub x} electrodes is shown to significantly increase TMR. Finally, unexpected transport properties in Fe{sub 1−X}Co{sub x}/MgO/Fe{sub 1−X}Co{sub x} (001) are presented. With the help of spin and symmetry resolved photoemission and ab initio calculation, the TMR decrease for Co content higher than 25% is shown to come from the existence of an interface state and the shift of the empty Δ1 minority spin state towards the Fermi level.

  11. Red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Saarinen, M.; Xiang, N.; Vilokkinen, V.; Melanen, P.; Orsila, S.; Uusimaa, P.; Savolainen, P.; Toivonen, M.; Pessa, M.

    2001-07-01

    Plastic optical fibres, which have a local attenuation minimum at 650 nm, have attracted much interest for low-cost short-haul communication systems. Red vertical-cavity surface-emitting lasers (VCSELs) provide a potential solution as light sources for these systems. The operation of vertical cavity emitters is based on a Fabry-Perot microcavity, which is formed by placing an optically active region inside of two parallel mirrors. These mirrors are usually formed epitaxially. So far, metal organic chemical vapour deposition (MOCVD) has been the major technology used for growing visible VCSELs. Recently, an alternative growth method—solid-source molecular beam epitaxy (SSMBE)—has been introduced to be a viable solution to the fabrication of these structures. The authors present the first MBE-grown visible AlGaInP vertical-cavity surface-emitting lasers. A laser with a 10 μm emitting window has an external quantum efficiency of 6.65% under continuous wave operation and it is still lasing at 45°C. Furthermore, a threshold current less than 1.0 mA is obtained for a device, which has an 8 μm emitting window.

  12. Plasma-assisted molecular beam epitaxy growth of ZnSnN2

    NASA Astrophysics Data System (ADS)

    Feldberg, Nathaniel; Aldous, James; Yao, Yuan; Tanveer, Imtiaz; Keen, Benjamin; Linhart, Wojciech; Veal, Tim; Song, Young-Wook; Reeves, Roger; Durbin, Steve

    2012-02-01

    The Zn-IV-nitrides are a promising series of ``earth abundant element'' semiconductors with a predicted band gap range of 0.6 eV to 5.4 eV, which, like the (Al,Ga,In)N family, spans the entire visible solar spectrum. Considering this alternative family has a number of advantages, including the avoidance of indium, the price of which has varied almost an order of magnitude over the past decade, and surface electron accumulation which is present in the In-rich alloys. Not all members of this family have yet been synthesized, in particular ZnSnN2, the most important member for PV with its predicted band gap of approximately 2 eV. We have successfully grown a series of these films using plasma-assisted molecular beam epitaxy using elemental Zn and Sn sources. In this report, we discuss the relationship between process parameters and microstructure, as well as stoichiometry as determined by Rutherford backscattering spectrometry. Additionally, we provide preliminary estimates for its bandgap energy based on photoluminescence and optical absorption.

  13. Photoluminescence of localized excitons in ZnCdO thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wu, T. Y.; Huang, Y. S.; Hu, S. Y.; Lee, Y. C.; Tiong, K. K.; Chang, C. C.; Shen, J. L.; Chou, W. C.

    2016-07-01

    We have investigated the luminescence characteristics of Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system. The temperature-dependent photoluminescence (PL) and excitation power-dependent PL spectra were measured to clarify the luminescence mechanisms of the Zn1-xCdxO thin films. The peak energy of the Zn1-xCdxO thin films with increasing the Cd concentration is observed as redshift and can be fitted by the quadratic function of alloy content. The broadened full-width at half-maximum (FWHM) estimated from the 15 K PL spectra as a function of Cd content shows a larger deviation between the experimental values and theoretical curve, which indicates that experimental FWHM values are affected not only by alloy compositional disorder but also by localized excitons occupying states in the tail of the density of states. The Urbach energy determined from an analysis of the lineshape of the low-energy side of the PL spectrum and the degree of localization effect estimated from the temperature-induced S-shaped PL peak position described an increasing mean exciton-localization effects in ZnCdO films with increasing the Cd content. In addition, the PL intensity and peak position as a function of excitation power are carried out to clarify the types of radiative recombination and the effects of localized exciton in the ZnCdO films with different Cd contents.

  14. Multiferroic fluoride BaCoF4 Thin Films Grown Via Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Borisov, Pavel; Johnson, Trent; García-Castro, Camilo; Kc, Amit; Schrecongost, Dustin; Cen, Cheng; Romero, Aldo; Lederman, David

    Multiferroic materials exhibit exciting physics related to the simultaneous presence of multiple long-range orders, in many cases consisting of antiferromagnetic (AF) and ferroelectric (FE) orderings. In order to provide a new, promising route for fluoride-based multiferroic material engineering, we grew multiferroic fluoride BaCoF4 in thin film form on Al2O3 (0001) substrates by molecular beam epitaxy. The films grow with the orthorhombic b-axis out-of-plane and with three in-plane structural twin domains along the polar c-axis directions. The FE ordering in thin films was verified by FE remanent hysteresis loops measurements at T = 14 K and by room temperature piezoresponse force microscopy (PFM). An AF behavior was found below Neel temperature TN ~ 80 K, which is in agreement with the bulk properties. At lower temperatures two additional magnetic phase transitions at 19 K and 41 K were found. First-principles calculations demonstrated that the growth strain applied to the bulk BaCoF4 indeed favors two canted spin orders, along the b- and a-axes, respectively, in addition to the main AF spin order along the c-axis. Supported by FAME (Contract 2013-MA-2382), WV Research Challenge Grant (HEPC.dsr.12.29), and DMREF-NSF 1434897.

  15. Molecular beam epitaxy control of the structural, optical, and electronic properties of ScN(001)

    SciTech Connect

    Smith, Arthur R.; AL-Brithen, Hamad A. H.; Ingram, David C.; Gall, Daniel

    2001-08-15

    Scandium nitride (001) oriented layers have been grown on magnesium oxide (001) substrates by molecular beam epitaxy using a rf-plasma source and a scandium effusion cell. The Sc/N flux ratio is found to be critical in determining the structural, optical, and electronic properties of the grown epitaxial layers. A distinct transition occurs at the point where the Sc/N flux ratio equals 1, which defines the line between N-rich and Sc-rich growth. Under N-rich conditions, the growth is epitaxial, and the surface morphology is characterized by a densely packed array of square-shaped plateaus and four-faced pyramids with the terraces between steps being atomically smooth. The films are stoichiometric and transparent with a direct optical transition at 2.15 eV. Under Sc-rich conditions, the growth is also epitaxial, but the morphology is dominated by spiral growth mounds. The morphology change is consistent with increased surface diffusion due to a Sc-rich surface. Excess Sc leads to understoichiometric layers with N vacancies which act as donors. The increased carrier density results in an optical reflection edge at 1 eV, absorption below the 2.15 eV band gap, and a drop in electrical resistivity. {copyright} 2001 American Institute of Physics.

  16. Usage of antimony segregation for selective doping of Si in molecular beam epitaxy

    SciTech Connect

    Yurasov, D. V.; Drozdov, M. N.; Murel, A. V.; Shaleev, M. V.; Novikov, A. V.; Zakharov, N. D.

    2011-06-01

    An original approach to selective doping of Si by antimony (Sb) in molecular beam epitaxy (MBE) is proposed and verified experimentally. This approach is based on controllable utilization of the effect of Sb segregation. In particular, the sharp dependence of Sb segregation on growth temperature in the range of 300-550 deg. C is exploited. The growth temperature variations between the kinetically limited and maximum segregation regimes are suggested to be utilized in order to obtain selectively doped structures with abrupt doping profiles. It is demonstrated that the proposed technique allows formation of selectively doped Si:Sb layers, including delta ({delta}-)doped layers in which Sb concentrations can be varied from 5 x 10{sup 15} to 10{sup 20} cm{sup -3}. The obtained doped structures are shown to have a high crystalline quality and the short-term growth interruptions, which are needed to change the substrate temperature, do not lead to any significant accumulation of background impurities in grown samples. Realization of the proposed approach requires neither too low (<300 deg. C), nor too high (>600 deg. C) growth temperatures or any special equipment for the MBE machines.

  17. A crossed molecular beams study on the formation of the exotic cyanoethynyl radical in Titan's atmosphere.

    SciTech Connect

    Gu, X.; Kaiser, R. I.; Mebel, A. M.; Kislov, V. V.; Klippenstein, S. J.; Harding, L. B.; Liang, M. C.; Yung, Y. L.

    2009-08-01

    The reaction of the dicarbon molecule (C{sub 2}) in its {sup 1}{Sigma}{sub g}{sup +} electronic ground state with hydrogen cyanide HCN(X{sup 1}{Sigma}{sup +}) is investigated in a crossed molecular beam setup to untangle the formation of the cyanoethynyl radical CCCN(X{sup 2}{Sigma}{sup +}) in hydrocarbon-rich atmospheres of planets and their moons such as Titan. Combined with electronic structure and rate theory calculations, we show that this elementary reaction is rapid, has no entrance barriers, and yields CCCN via successive rearrangements of the initial HC{sub 3}N collision complex to the cyanoacetylene intermediate (HCCCN) followed by unimolecular decomposition of the latter without exit barrier. New photochemical models imply that this radical could serve as a key building block to form more complex molecules as observed in situ by the Cassini spacecraft, ultimately leading to organic aerosol particles, which make up the orange-brownish haze layers in Titan's atmosphere.

  18. A CROSSED MOLECULAR BEAMS STUDY ON THE FORMATION OF THE EXOTIC CYANOETHYNYL RADICAL IN TITAN'S ATMOSPHERE

    SciTech Connect

    Gu, X.; Kaiser, R. I.; Mebel, A. M.; Kislov, V. V.; Klippenstein, S. J.; Harding, L. B.; Liang, M. C.; Yung, Y. L.

    2009-08-20

    The reaction of the dicarbon molecule (C{sub 2}) in its {sup 1}{sigma}{sub g} {sup +} electronic ground state with hydrogen cyanide HCN(X{sup 1}{sigma}{sup +}) is investigated in a crossed molecular beam setup to untangle the formation of the cyanoethynyl radical CCCN(X{sup 2}{sigma}{sup +}) in hydrocarbon-rich atmospheres of planets and their moons such as Titan. Combined with electronic structure and rate theory calculations, we show that this elementary reaction is rapid, has no entrance barriers, and yields CCCN via successive rearrangements of the initial HC{sub 3}N collision complex to the cyanoacetylene intermediate (HCCCN) followed by unimolecular decomposition of the latter without exit barrier. New photochemical models imply that this radical could serve as a key building block to form more complex molecules as observed in situ by the Cassini spacecraft, ultimately leading to organic aerosol particles, which make up the orange-brownish haze layers in Titan's atmosphere.

  19. Evolution of Surface Morphology of Patterned GaAs(100) during Molecular Beam Epitaxial Growth

    NASA Astrophysics Data System (ADS)

    Kan, Hung-Chih; Shah, Sonam; Tadayyon-Eslami, Tabassom; Phaneuf, Raymond

    2003-03-01

    We report the results of an investigation of the evolution of the surface morphology during molecular beam epitaxial growth on a patterned GaAs(100) surface. The initial GaAs(100) surfaces were patterned lithographically with arrays of cylindrical pits whose diameters and center-to-center distances are varied in a combinatorial manner. Using atomic force microscopy (AFM), we characterized the evolution of the corrugation throughout the growth. We compare the measured height profiles with simulations from various continuum models[1]. This comparison allows us to discriminate between various continuum modes of growth. * Work supported by the Minta-Martin Foundation, the Laboratory for Physical Sciences, and an NSF-MRSEC, DMR 00-8008. Reference 1 Mehran Kardar, Giorgio Parisi, and Yi-Cheng Zhang, Physical Review Letters 56 (9), 889 (1986); Tao Sun, Hong Guo, and Martin Grant, Physical Review A 40 (11), 6763 (1989); Z.-W. Lai and S. Das Sarma, Physical Review Letters 66 (18), 2348 (1991); M. D. Johnson, C. Orme, A. W. Hunt et al., Physical Review Letters 72 (1), 116 (1994).

  20. Molecular beam epitaxy growth and magnetic properties of Cr-Co-Ga Heusler alloy films

    SciTech Connect

    Feng, Wuwei Wang, Weihua; Zhao, Chenglong; Van Quang, Nguyen; Cho, Sunglae; Dung, Dang Duc

    2015-11-15

    We have re-investigated growth and magnetic properties of Cr{sub 2}CoGa films using molecular beam epitaxy technique. Phase separation and precipitate formation were observed experimentally again in agreement with observation of multiple phases separation in sputtered Cr{sub 2}CoGa films by M. Meinert et al. However, significant phase separation could be suppressed by proper control of growth conditions. We showed that Cr{sub 2}CoGa Heusler phase, rather than Co{sub 2}CrGa phase, constitutes the majority of the sample grown on GaAs(001) at 450 {sup o}C. The measured small spin moment of Cr{sub 2}CoGa is in agreement with predicted HM-FCF nature; however, its Curie temperature is not as high as expected from the theoretical prediction probably due to the off-stoichiometry of Cr{sub 2}CoGa and the existence of the disorders and phase separation.

  1. Plasma-assisted molecular beam epitaxy of SnO 2 on TiO 2

    NASA Astrophysics Data System (ADS)

    Tsai, M. Y.; White, M. E.; Speck, J. S.

    2008-08-01

    Epitaxial growth of SnO 2 on TiO 2 (1 1 0) substrates by plasma-assisted molecular beam epitaxy was studied under various growth conditions to explore the potential for high-quality single crystalline growth. Phase-pure (1 1 0)-oriented SnO 2 films with an optimum on-axis X-ray rocking curve scan full-width at half-maximum equal to 0.612° were grown. The film epitaxy proceeded in the Volmer-Weber growth mode. We identified different growth regimes by measuring growth rate variations correlated with increasing tin fluxes at a fixed oxygen pressure. Beginning in the oxygen-rich growth regime, growth rates increased linearly as the tin flux increased. Atomically flat surfaces were observed in the oxygen-rich regime. Continued tin flux increases resulted in a maximum growth rate of 470 nm/h. Further tin flux increases prevented SnO 2 formation on the growth surface and acted as a nucleation barrier of SnO 2 on the TiO 2 substrates identifying a metal-rich growth regime.

  2. Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy

    PubMed Central

    Summerfield, Alex; Davies, Andrew; Cheng, Tin S.; Korolkov, Vladimir V.; Cho, YongJin; Mellor, Christopher J.; Foxon, C. Thomas; Khlobystov, Andrei N.; Watanabe, Kenji; Taniguchi, Takashi; Eaves, Laurence; Novikov, Sergei V.; Beton, Peter H.

    2016-01-01

    Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are highly strained. Topological defects in the moiré patterns are observed and attributed to the relaxation of graphene islands which nucleate at different sites and subsequently coalesce. In addition, cracks are formed leading to strain relaxation, highly anisotropic strain fields, and abrupt boundaries between regions with different moiré periods. These cracks can also be formed by modification of the layers with a local probe resulting in the contraction and physical displacement of graphene layers. The Raman spectra of regions with a large moiré period reveal split and shifted G and 2D peaks confirming the presence of strain. Our work demonstrates a new approach to the growth of epitaxial graphene and a means of generating and modifying strain in graphene. PMID:26928710

  3. Exposure characterizations of polymer type electron beam resists with various molecular weights for next-generation photomask

    NASA Astrophysics Data System (ADS)

    Takayama, Tomohiro; Asada, Hironori; Kishimura, Yukiko; Hoshino, Ryoichi; Kawata, Atsushi

    2015-10-01

    Higher resolution is eagerly requested to the electron beam resist for the next generation photomask production as well as higher sensitivity. The performance of a polymer resist is mainly characterized by its chemical structure and molecular weight. Positive tone polymer resists with various molecular weights ranging from 60 k to 500 k are synthesized and the molecular weight dependence on exposure characteristics is examined by fabricating line-and-space patterns. The molecular weight dependence of sensitivity for amyl acetate developer is small in the molecular weight range in this study. In a low molecular weight resist, the cross-section profile of the resist pattern becomes rounder and then the disconnections are observed in the 20-nm line-and-space pattern. Although the pattern width change by changing the exposure dose for each resist is quite similar, the exposure dose margin of pattern formation becomes wider with the higher molecular weight. The line width roughness is smaller in a high molecular weight resist than in a low molecular weight resist. The shift amount of the pattern width from the design value for various line-and-space patterns and the dry etching resistance to CF4 plasma are also presented.

  4. Intense ion beam characterization and thermal modeling for beam materials processing

    SciTech Connect

    Davis, H.A.; Rej, D.J.; Waganaar, W.J.; Johnston, G.P.; Ruiz, C.L.; Schmidllap, F.A.

    1994-08-01

    The authors have developed an intense ion beam to investigate materials processing applications. Initial experiments have focused on thin film formation by depositing beam-ablated target material on substrates. Measurements of beam properties governing target ablation are presented here. Techniques include Thomson parabola particle spectroscopy to measure the ion beam atomic composition and the energy spectrum of each beam component, and thermal imaging to measure the beam incident energy density. Measurements are used as input to a computer model of the beam-target interaction. Comparison of computational results with target ablation and target energy absorption are found to be in good agreement.

  5. Influence of the Liquid on Femtosecond Laser Ablation of Iron

    NASA Astrophysics Data System (ADS)

    Kanitz, A.; Hoppius, J. S.; Gurevich, E. L.; Ostendorf, A.

    Ultrashort pulse laser ablation has become a very important industrial method for highly precise material removal ranging from sensitive thin film processing to drilling and cutting of metals. Over the last decade, a new method to produce pure nanoparticles emerged from this technique: Pulsed Laser Ablation in Liquids (PLAL). By this method, the ablation of material by a laser beam is used to generate a metal vapor within the liquid in order to obtain nanoparticles from its recondensation process. It is well known that the liquid significantly alters the ablation properties of the substrate, in our case iron. For example, the ablation rate and crater morphology differ depending on the used liquid. We present our studies on the efficiency and quality of ablated grooves in water, methanol, acetone, ethanol and toluene. The produced grooves are investigated by means of white-light interferometry, EDX and SEM.

  6. Laser ablation of blepharopigmentation

    SciTech Connect

    Tanenbaum, M.; Karas, S.; McCord, C.D. Jr. )

    1988-01-01

    This article discusses laser ablation of blepharopigmentation in four stages: first, experimentally, where pigment vaporization is readily achieved with the argon blue-green laser; second, in the rabbit animal model, where eyelid blepharopigmentation markings are ablated with the laser; third, in human subjects, where the argon blue-green laser is effective in the ablation of implanted eyelid pigment; and fourth, in a case report, where, in a patient with improper pigment placement in the eyelid, the laser is used to safely and effectively ablate the undesired pigment markings. This article describes in detail the new technique of laser ablation of blepharopigmentation. Potential complications associated with the technique are discussed.

  7. Generation of CW cold CH3CN molecular beam by a bent electostatic quadrupole guiding: Monte-Carlo study

    NASA Astrophysics Data System (ADS)

    Yun, Min; Liu, Yang; Deng, Lian-Zhong; Zhou, Qi; Yin, Jian-Ping

    2008-02-01

    A new kind of continuous-wave (CW) cold molecular beam, methyl cyanide (CH3CN) beam, is generated by a bent electrostatic quadrupole guiding. The Stark shift of rotational energy levels of CH3CN molecule and its population distribution are calculated, and the dynamic processes of electrostatic guiding and energy filtering of CH3CN molecules from a gas source with room temperature (300 K) are simulated by Monte Carlo Method. The study showed that the longitudinal and transversal temperatures of output cold CH3CN beam could be about ˜2 K and ˜ 420 mK, and the corresponding guiding efficiency was about 10-5 as the guiding voltage was 3 kV. Furthermore, the temperature of the guided molecules and its guiding efficiency can be controlled by adjusting the guiding voltages applied on electrodes.

  8. Self-corrected sensors based on atomic absorption spectroscopy for atom flux measurements in molecular beam epitaxy

    SciTech Connect

    Du, Y. E-mail: scott.chambers@pnnl.gov; Liyu, A. V.; Droubay, T. C.; Chambers, S. A. E-mail: scott.chambers@pnnl.gov; Li, G.

    2014-04-21

    A high sensitivity atom flux sensor based on atomic absorption spectroscopy has been designed and implemented to control electron beam evaporators and effusion cells in a molecular beam epitaxy system. Using a high-resolution spectrometer and a two-dimensional charge coupled device detector in a double-beam configuration, we employ either a non-resonant line or a resonant line with low cross section from the same hollow cathode lamp as the reference for nearly perfect background correction and baseline drift removal. This setup also significantly shortens the warm-up time needed compared to other sensor technologies and drastically reduces the noise coming from the surrounding environment. In addition, the high-resolution spectrometer allows the most sensitive resonant line to be isolated and used to provide excellent signal-to-noise ratio.

  9. Self-corrected Sensors Based On Atomic Absorption Spectroscopy For Atom Flux Measurements In Molecular Beam Epitaxy

    SciTech Connect

    Du, Yingge; Droubay, Timothy C.; Liyu, Andrey V.; Li, Guosheng; Chambers, Scott A.

    2014-04-24

    A high sensitivity atom flux sensor based on atomic absorption spectroscopy has been designed and implemented to control electron beam evaporators and effusion cells in a molecular beam epitaxy system. Using a high-resolution spectrometer and a two-dimensional charge coupled device (CCD) detector in a double-beam configuration, we employ a non-resonant line or a resonant line with lower absorbance from the same hollow cathode lamp as the reference for nearly perfect background correction and baseline drift removal. This setup also significantly shortens the warm-up time needed compared to other sensor technologies and drastically reduces the noise coming from the surrounding environment. In addition, the high-resolution spectrometer allows the most sensitive resonant line to be isolated and used to provide excellent signal-to-noise ratio.

  10. Sci—Sat AM: Stereo — 08: Stereotactic Ablative Radiotherapy (SABR) for low, intermediate and high risk prostate cancer using Volumetric Modulated Arc Therapy (VMAT) with a 10x Flattening Filter Free (FFF) beam

    SciTech Connect

    Mestrovic, A; Fortin, D; Alexander, A

    2014-08-15

    Purpose: To determine the feasibility of using Volumetric Modulated Arc Therapy (VMAT) with a 10x Flattening Filter Free (FFF) beam for Stereotactic Ablative Radiotherapy (SABR) for low, intermediate and high risk prostate cancer. Methods and Materials: Ten anonymized patient CT data sets were used in this planning study. For each patient CT data set, three sets of contours were generated: 1) low risk, 2) intermediate risk, and 3) high risk scenarios. For each scenario, a single-arc and a double-arc VMAT treatment plans were created. Plans were generated with the Varian Eclipse™ treatment planning system for a Varian TrueBeam™ linac equipped with Millenium 120 MLC. Plans were created using a 10x-FFF beam with a maximum dose rate of 2400 MU/min. Dose prescription was 36.25Gy/5 fractions with the planning objective of covering 99% of the Planning Target Volume with the 95% of the prescription dose. Normal tissue constraints were based on provincial prostate SABR planning guidelines, derived from national and international prostate SABR protocols. Plans were evaluated and compared in terms of: 1) dosimetric plan quality, and 2) treatment delivery efficiency. Results: Both single-arc and double-arc VMAT plans were able to meet the planning goals for low, intermediate and high risk scenarios. No significant dosimetric differences were observed between the plans. However, the treatment time was significantly lower for a single-arc VMAT plans. Conclusions: Prostate SABR treatments are feasible with 10x-FFF VMAT technique. A single-arc VMAT offers equivalent dosimetric plan quality and a superior treatment delivery efficiency, compared to a double-arc VMAT.

  11. Note: a short-pulse high-intensity molecular beam valve based on a piezoelectric stack actuator.

    PubMed

    Abeysekera, Chamara; Joalland, Baptiste; Shi, Yuanyuan; Kamasah, Alexander; Oldham, James M; Suits, Arthur G

    2014-11-01

    Solenoid and piezoelectric disk valves, which are widely used to generate molecular beam pulses, still suffer from significant restrictions, such as pulse durations typically >50 μs, low repetition rates, and limited gas flows and operational times. Much of this arises owing to the limited forces these actuators can achieve. To overcome these limitations, we have developed a new pulsed valve based on a high-force piezoelectric stack actuator. We show here that operation with pulse durations as low as 20 μs and repetition rates up to 100 Hz can be easily achieved by operating the valve in conjunction with a commercial fast high-voltage switch. We outline our design and demonstrate its performance with molecular beam characterization via velocity map ion imaging.

  12. Shock tube coupled to the time-of-flight mass spectrometer via a molecular beam sampling system.

    PubMed

    Krizancic, I; Haluk, M; Cho, S H; Trass, O

    1979-07-01

    A method for continuous mass spectrometric analysis of high-temperature reacting gas mixtures is described. The apparatus consists of a unique combination of three devices: the shock tube, the time-of-flight mass spectrometer, and the supersonic molecular beam. The driven section of the shock tube constitutes the reservoir of a supersonic molecular beam by which gas is continuously extracted from the reaction zone and introduced through a two-stage high-capacity vacuum system into the ionization region of the mass spectrometer. The shock tube and the mass spectrometer are coupled at right angles to one another. This configuration avoids excessive pressure buildup in the mass spectrometer system. The apparatus has an estimated mass resolution of 100 amu, a frequency range of 10-100 kHz, and can be operated over a wide range of shock conditions during the complete high-temperature pulse. PMID:18699630

  13. Note: A short-pulse high-intensity molecular beam valve based on a piezoelectric stack actuator

    SciTech Connect

    Abeysekera, Chamara; Joalland, Baptiste; Shi, Yuanyuan; Kamasah, Alexander; Oldham, James M.; Suits, Arthur G.

    2014-11-15

    Solenoid and piezoelectric disk valves, which are widely used to generate molecular beam pulses, still suffer from significant restrictions, such as pulse durations typically >50 μs, low repetition rates, and limited gas flows and operational times. Much of this arises owing to the limited forces these actuators can achieve. To overcome these limitations, we have developed a new pulsed valve based on a high-force piezoelectric stack actuator. We show here that operation with pulse durations as low as 20 μs and repetition rates up to 100 Hz can be easily achieved by operating the valve in conjunction with a commercial fast high-voltage switch. We outline our design and demonstrate its performance with molecular beam characterization via velocity map ion imaging.

  14. Neuropathology of ablation of rat gliosarcomas and contiguous brain tissues using a microplanar beam of synchrotron-wiggler-generated X rays.

    PubMed

    Laissue, J A; Geiser, G; Spanne, P O; Dilmanian, F A; Gebbers, J O; Geiser, M; Wu, X Y; Makar, M S; Micca, P L; Nawrocky, M M; Joel, D D; Slatkin, D N

    1998-11-23

    Adult-rat-brain tissues display an unusually high resistance to necrosis when serially irradiated with parallel, thin slices of a microplanar (i.e., microscopically thin and macroscopically broad) beam of synchrotron-wiggler-generated, approx. 35-120 keV (median approx. 50 keV) Gd-filtered X rays at skin-entrance absorbed doses of 312 to 5000 Gy per slice. Such microplanar beams were used to irradiate young adult rats bearing right frontocerebral 9L gliosarcomas (approx. 4 mm diameter), through a volume of tissue containing the tumor and contiguous brain tissue, either in a single array or in 2 orthogonally crossed arrays of tissue slices. Each array included 101 parallel microplanar slices, 100 microm center-to-center distance, each slice being approx. 25 microm wide and 12 mm high, with skin-entrance absorbed doses of 312.5 Gy or 625 Gy per slice. Compared with unirradiated controls with a median survival time of 20 days after tumor initiation, the median survival time was extended in irradiated rats by 139 days (625 Gy, crossed arrays), 96 days (312 Gy, crossed arrays) or 24 days (625 Gy, single array). The tumors disappeared in 22 of the 36 irradiated rats, 4/11 even after unidirectional microbeam irradiation. The extent and severity of radiation damage to the normal brain in rats with or without tumor was graded histopathologically. Correlation of those grades with radiation doses shows that loss of tissue structure was confined to beam-crossing regions and that only minor damage was done to zones of the brain irradiated unidirectionally.

  15. Cu-doped AlN: A possible spinaligner at room-temperature grown by molecular beam epitaxy?

    SciTech Connect

    Ganz, P. R.; Schaadt, D. M.

    2011-12-23

    Cu-doped AlN was prepared by plasma assisted molecular beam epitaxy on C-plane sapphire substrates. The growth conditions were investigated for different Cu to Al flux ratios from 1.0% to 4.0%. The formation of Cu-Al alloys on the surface was observed for all doping level. In contrast to Cu-doped GaN, all samples showed diamagnetic behavior determined by SQUID measurements.

  16. Recent Advances in Tumor Ablation for Hepatocellular Carcinoma.

    PubMed

    Kang, Tae Wook; Rhim, Hyunchul

    2015-09-01

    Image-guided tumor ablation for early stage hepatocellular carcinoma (HCC) is an accepted non-surgical treatment that provides excellent local tumor control and favorable survival benefit. This review summarizes the recent advances in tumor ablation for HCC. Diagnostic imaging and molecular biology of HCC has recently undergone marked improvements. Second-generation ultrasonography (US) contrast agents, new computed tomography (CT) techniques, and liver-specific contrast agents for magnetic resonance imaging (MRI) have enabled the early detection of smaller and inconspicuous HCC lesions. Various imaging-guidance tools that incorporate imaging-fusion between real-time US and CT/MRI, that are now common for percutaneous tumor ablation, have increased operator confidence in the accurate targeting of technically difficult tumors. In addition to radiofrequency ablation (RFA), various therapeutic modalities including microwave ablation, irreversible electroporation, and high-intensity focused ultrasound ablation have attracted attention as alternative energy sources for effective locoregional treatment of HCC. In addition, combined treatment with RFA and chemoembolization or molecular agents may be able to overcome the limitation of advanced or large tumors. Finally, understanding of the biological mechanisms and advances in therapy associated with tumor ablation will be important for successful tumor control. All these advances in tumor ablation for HCC will result in significant improvement in the prognosis of HCC patients. In this review, we primarily focus on recent advances in molecular tumor biology, diagnosis, imaging-guidance tools, and therapeutic modalities, and refer to the current status and future perspectives for tumor ablation for HCC.

  17. Comparison of Cherenkov excited fluorescence and phosphorescence molecular sensing from tissue with external beam irradiation.

    PubMed

    Lin, Huiyun; Zhang, Rongxiao; Gunn, Jason R; Esipova, Tatiana V; Vinogradov, Sergei; Gladstone, David J; Jarvis, Lesley A; Pogue, Brian W

    2016-05-21

    Ionizing radiation delivered by a medical linear accelerator (LINAC) generates Cherenkov emission within the treated tissue. A fraction of this light, in the 600-900 nm wavelength region, propagates through centimeters of tissue and can be used to excite optical probes in vivo, enabling molecular sensing of tissue analytes. The success of isolating the emission signal from this Cherenkov excitation background is dependent on key factors such as: (i) the Stokes shift of the probe spectra; (ii) the excited state lifetime; (iii) the probe concentration; (iv) the depth below the tissue surface; and (v) the radiation dose used. Previous studies have exclusively focused on imaging phosphorescent dyes, rather than fluorescent dyes. However there are only a few biologically important phosphorescent dyes and yet in comparison there are thousands of biologically relevant fluorescent dyes. So in this study the focus was a study of efficacy of Cherenkov-excited luminescence using fluorescent commercial near-infrared probes, IRDye 680RD, IRDye 700DX, and IRDye 800CW, and comparing them to the well characterized phosphorescent probe Oxyphor PtG4, an oxygen sensitive dye. Each probe was excited by Cherenkov light from a 6 MV external radiation beam, and measured in continuous wave or time-gated modes. The detection was performed by spectrally resolving the luminescence signals, and measuring them with spectrometer-based separation on an ICCD detector. The results demonstrate that IRDye 700DX and PtG4 allowed for the maximal signal to noise ratio. In the case of the phosphorescent probe, PtG4, with emission decays on the microsecond (μs) time scale, time-gated acquisition was possible, and it allowed for higher efficacy in terms of the probe concentration and detection depth. Phantoms containing the probe at 5 mm depth could be detected at concentrations down to the nanoMolar range, and at depths into the tissue simulating phantom near 3 cm. In vivo studies showed that 5

  18. Comparison of Cherenkov excited fluorescence and phosphorescence molecular sensing from tissue with external beam irradiation.

    PubMed

    Lin, Huiyun; Zhang, Rongxiao; Gunn, Jason R; Esipova, Tatiana V; Vinogradov, Sergei; Gladstone, David J; Jarvis, Lesley A; Pogue, Brian W

    2016-05-21

    Ionizing radiation delivered by a medical linear accelerator (LINAC) generates Cherenkov emission within the treated tissue. A fraction of this light, in the 600-900 nm wavelength region, propagates through centimeters of tissue and can be used to excite optical probes in vivo, enabling molecular sensing of tissue analytes. The success of isolating the emission signal from this Cherenkov excitation background is dependent on key factors such as: (i) the Stokes shift of the probe spectra; (ii) the excited state lifetime; (iii) the probe concentration; (iv) the depth below the tissue surface; and (v) the radiation dose used. Previous studies have exclusively focused on imaging phosphorescent dyes, rather than fluorescent dyes. However there are only a few biologically important phosphorescent dyes and yet in comparison there are thousands of biologically relevant fluorescent dyes. So in this study the focus was a study of efficacy of Cherenkov-excited luminescence using fluorescent commercial near-infrared probes, IRDye 680RD, IRDye 700DX, and IRDye 800CW, and comparing them to the well characterized phosphorescent probe Oxyphor PtG4, an oxygen sensitive dye. Each probe was excited by Cherenkov light from a 6 MV external radiation beam, and measured in continuous wave or time-gated modes. The detection was performed by spectrally resolving the luminescence signals, and measuring them with spectrometer-based separation on an ICCD detector. The results demonstrate that IRDye 700DX and PtG4 allowed for the maximal signal to noise ratio. In the case of the phosphorescent probe, PtG4, with emission decays on the microsecond (μs) time scale, time-gated acquisition was possible, and it allowed for higher efficacy in terms of the probe concentration and detection depth. Phantoms containing the probe at 5 mm depth could be detected at concentrations down to the nanoMolar range, and at depths into the tissue simulating phantom near 3 cm. In vivo studies showed that 5

  19. Comparison of Cherenkov excited fluorescence and phosphorescence molecular sensing from tissue with external beam irradiation

    NASA Astrophysics Data System (ADS)

    Lin, Huiyun; Zhang, Rongxiao; Gunn, Jason R.; Esipova, Tatiana V.; Vinogradov, Sergei; Gladstone, David J.; Jarvis, Lesley A.; Pogue, Brian W.

    2016-05-01

    Ionizing radiation delivered by a medical linear accelerator (LINAC) generates Cherenkov emission within the treated tissue. A fraction of this light, in the 600-900 nm wavelength region, propagates through centimeters of tissue and can be used to excite optical probes in vivo, enabling molecular sensing of tissue analytes. The success of isolating the emission signal from this Cherenkov excitation background is dependent on key factors such as: (i) the Stokes shift of the probe spectra; (ii) the excited state lifetime; (iii) the probe concentration; (iv) the depth below the tissue surface; and (v) the radiation dose used. Previous studies have exclusively focused on imaging phosphorescent dyes, rather than fluorescent dyes. However there are only a few biologically important phosphorescent dyes and yet in comparison there are thousands of biologically relevant fluorescent dyes. So in this study the focus was a study of efficacy of Cherenkov-excited luminescence using fluorescent commercial near-infrared probes, IRDye 680RD, IRDye 700DX, and IRDye 800CW, and comparing them to the well characterized phosphorescent probe Oxyphor PtG4, an oxygen sensitive dye. Each probe was excited by Cherenkov light from a 6 MV external radiation beam, and measured in continuous wave or time-gated modes. The detection was performed by spectrally resolving the luminescence signals, and measuring them with spectrometer-based separation on an ICCD detector. The results demonstrate that IRDye 700DX and PtG4 allowed for the maximal signal to noise ratio. In the case of the phosphorescent probe, PtG4, with emission decays on the microsecond (μs) time scale, time-gated acquisition was possible, and it allowed for higher efficacy in terms of the probe concentration and detection depth. Phantoms containing the probe at 5 mm depth could be detected at concentrations down to the nanoMolar range, and at depths into the tissue simulating phantom near 3 cm. In vivo studies showed that 5

  20. Light on the 3 μm Emission Band from Space with Molecular Beam Spectroscopy

    NASA Astrophysics Data System (ADS)

    Maltseva, Elena; Mackie, Cameron J.; Candian, Alessandra; Petrignani, Annemieke; Tielens, Xander; Oomens, Jos; Huang, Xinchuan; Lee, Timothy; Buma, Wybren Jan

    2016-06-01

    The majority of interstellar objects shows IR emission features also known as unidentified infrared (UIR) emission bands. These UIR bands are attributed to IR emission of highly-excited gaseous polycyclic aromatic hydrocarbons (PAHs). To understand the physical conditions and chemical evolution of the interstellar environment a precise identification of the emission carriers is desired. The 3 μm UIR feature is represented by a strong band at 3040 cm-1, a plateau from 3150 to 2700 cm-1 and a number of weak features within this plateau. The 3040 cm-1 component is assigned to fundamental CH-stretch vibrations of PAHs, but there still remain many questions on the origin of the other features. In this work we have studied experimentally the 3 μm region of regular, hydrogenated and methylated PAHs (up to 5 rings), combining molecular beam techniques with IR-UV ion dip spectroscopy, and theoretically by density functional theory (DFT) calculations within the harmonic and anharmonic approximation. We find that (a) the 3 μm region of PAHs is dominated by Fermi resonances and thereby cannot be treated within the harmonic approximation; (b) the periphery structure of the molecules strongly affects the shape of the 3 μm band. In particular, the two-component emission interpretation can be explained by the presence of molecules with and without bay-hydrogens; (c) due to strong Fermi resonances of fundamental modes with combination bands regular PAHs can significantly contribute to the 3 μm plateau in the 3150-2950 cm-1, while hydrogenated and methylated species are primarily responsible for features in the 2950-2750 cm-1 region.

  1. Minority carrier lifetime in iodine-doped molecular beam epitaxy-grown HgCdTe

    SciTech Connect

    Madni, I.; Umana-Membreno, G. A.; Lei, W.; Gu, R.; Antoszewski, J.; Faraone, L.

    2015-11-02

    The minority carrier lifetime in molecular beam epitaxy grown layers of iodine-doped Hg{sub 1−x}Cd{sub x}Te (x ∼ 0.3) on CdZnTe substrates has been studied. The samples demonstrated extrinsic donor behavior for carrier concentrations in the range from 2 × 10{sup 16} cm{sup −3} to 6 × 10{sup 17} cm{sup −3} without any post-growth annealing. At a temperature of 77 K, the electron mobility was found to vary from 10{sup 4} cm{sup 2}/V s to 7 × 10{sup 3} cm{sup 2}/V s and minority carrier lifetime from 1.6 μs to 790 ns, respectively, as the carrier concentration was increased from 2 × 10{sup 16} cm{sup −3} to 6 × 10{sup 17} cm{sup −3}. The diffusion of iodine is much lower than that of indium and hence a better alternative in heterostructures such as nBn devices. The influence of carrier concentration and temperature on the minority carrier lifetime was studied in order to characterize the carrier recombination mechanisms. Measured lifetimes were also analyzed and compared with the theoretical models of the various recombination processes occurring in these materials, indicating that Auger-1 recombination was predominant at higher doping levels. An increase in deep-level generation-recombination centers was observed with increasing doping level, which suggests that the increase in deep-level trap density is associated with the incorporation of higher concentrations of iodine into the HgCdTe.

  2. Ultrafast structural dynamics of LaVO3 thin films grown by hybrid molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Brahlek, Matthew; Lapano, Jason; Stoica, Vladimir; Zhang, Lei; Zhang, Hai-Tian; Akamatsu, Hirofumi; Eaton, Craig; Gopalan, Venkatraman; Freeland, John; Wen, Haidan; Engel-Herbert, Roman

    LaVO3, with a partially full d-shell is expected to be metallic, but due to electron-electron interactions a gap emerges and the ground state is a Mott insulator. Such effects are a strong function of the bonding geometry, and particularly the V-O-V bond angle. Controlling these structural effects on the ultrafast time scale can lead to control over the underlying electronic ground state. Here we report the ultrafast structural dynamics of 25 and 50 nm thick LaVO3 thin films grown by the hybrid molecular beam epitaxy technique on SrTiO3 when excited across the bandgap by 800 nm light. Using time-resolved x-ray diffraction on the 100 ps time scale at Sector 7 of the Advanced Photon Source, we directly measured the structural changes with atomic accuracy by monitoring integer Bragg diffraction peaks and find a large out-of-plane strain of 0.18% upon optical excitation; the recovery time is ~1 ns for the 25 nm film and ~2 ns for the 50 nm film, consistent with the thermal transport from the film to the substrate. Further, we will discuss the response of the oxygen octahedral rotation patterns indicated by changes of the half-order diffraction peaks. Understanding such ultrafast structural deformation is important for optimizing optical excitations to create new metastable phases starting from a Mott insulator. This work was supported by the Department of Energy under Grant DE-SC0012375, and DE-AC02-06CH11357.

  3. Growth mechanism of CuZnInSe2 thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Tseng, Ya Hsin; Yang, Chu Shou; Wu, Chia Hsing; Chiu, Jai Wei; Yang, Min De; Wu, Chih-Hung

    2013-09-01

    CuZnInSe2 (CZIS) has potential application in solar cell for absorption layer, and give an advantage to change the band gap from CuInSe2 (1.02 eV) to ZnSe (2.67 eV). Using molecular beam epitaxy technology, the CZIS thin films were grown via CuInSe (CIS) and ZnSe base. In the case of CIS, thin films were grown on Mo-coated soda lime glass with various zinc flux. CIS was transformed into chalcopyrite and sphalerite coexisting CZIS easily but it is difficult to transform into the pure sphalerite CZIS. Zn/(Zn+In+Cu) ratio has limited to approximate 36 at% and the excess-Zn played a catalyst role. In the case of ZnSe base, which was grown on GaAs (001), various In and Cu flux defined as the TIn series and TCu series, respectively. There are four types of compound in the TIn series and TCu series, including ZnSe, InxSey, ZnIn2Se4 (ZIS) and CZIS. In the TIn series under the lowest In and Cu flux, selenium (Se) were randomly combined with cations to form the CZIS. When TIn is increased in this moment, the CZIS was transformed into ZIS. In the TCu series, CZIS demonstrated via In-rich ZIS (Zn(In, Cu)Se) and InxSey base ((Zn, Cu)InSe). It is chalcopyrite and sphalerite coexisting structure in the medium TCu region. In the high TCu region, it is transformed into the Zn-poor and Cu-rich CZIS.

  4. Effect of supersonic molecular-beam injection on edge fluctuation and particle transport in Heliotron J

    SciTech Connect

    Zang, L. Kasajima, K.; Hashimoto, K.; Kenmochi, N.; Ohshima, S.; Mizuuchi, T.; Yamamoto, S.; Sha, M.; Nagasaki, K.; Kado, S.; Okada, H.; Minami, T.; Kobayashi, S.; Shi, N.; Konoshima, S.; Nakamura, Y.; Sano, F.; Nishino, N.; Takeuchi, M.; Mukai, K.; and others

    2014-04-15

    Edge fluctuation in a supersonic molecular-beam injection (SMBI) fueled plasma has been measured using an electrostatic probe array. After SMBI, the plasma stored energy (W{sub p}) temporarily decreased then started to increase. The local plasma fluctuation and fluctuation induced particle transport before and after SMBI have been analyzed. In a short duration (∼4 ms) just after SMBI, the density fluctuation of broad-band low frequency increased, and the probability density function (PDF) changed from a nearly Gaussian to a positively skewed non-Gaussian one. This suggests that intermittent structures were produced due to SMBI. Also the fluctuation induced particle transport was greatly enhanced during this short duration. About 4 ms after SMBI, the low frequency broad-band density fluctuation decreased, and the PDF returned to a nearly Gaussian shape. Also the fluctuation induced particle transport was reduced. Compared with conventional gas puff, W{sub p} degradation window is very short due to the short injection period of SMBI. After this short degradation window, fluctuation induced particle transport was reduced and W{sub p} started the climbing phase. Therefore, the short period of the influence to the edge fluctuation might be an advantage of this novel fueling technique. On the other hand, although their roles are not identified at present, coherent MHD modes are also suppressed as well by the application of SMBI. These MHD modes are thought to be de-exited due to a sudden change of the edge density and/or excitation conditions.

  5. Nonequilibrium Ablation of Phenolic Impregnated Carbon Ablator

    NASA Technical Reports Server (NTRS)

    Milos, Frank S.; Chen, Yih K.; Gokcen, Tahir

    2012-01-01

    In previous work, an equilibrium ablation and thermal response model for Phenolic Impregnated Carbon Ablator was developed. In general, over a wide range of test conditions, model predictions compared well with arcjet data for surface recession, surface temperature, in-depth temperature at multiple thermocouples, and char depth. In this work, additional arcjet tests were conducted at stagnation conditions down to 40 W/sq cm and 1.6 kPa. The new data suggest that nonequilibrium effects become important for ablation predictions at heat flux or pressure below about 80 W/sq cm or 10 kPa, respectively. Modifications to the ablation model to account for nonequilibrium effects are investigated. Predictions of the equilibrium and nonequilibrium models are compared with the arcjet data.

  6. Renal Ablation Update

    PubMed Central

    Khiatani, Vishal; Dixon, Robert G.

    2014-01-01

    Thermal ablative technologies have evolved considerably in the recent past and are now an important component of current clinical guidelines for the treatment of small renal masses. Both radiofrequency ablation and cryoablation have intermediate-term oncologic control that rivals surgical options, with favorable complication profiles. Studies comparing cryoablation and radiofrequency ablation show no significant difference in oncologic control or complication profile between the two modalities. Early data from small series with microwave ablation have shown similar promising results. Newer technologies including irreversible electroporation and high-intensity–focused ultrasound have theoretical advantages, but will require further research before becoming a routine part of the ablation armamentarium. The purpose of this review article is to discuss the current ablative technologies available, briefly review their mechanisms of action, discuss technical aspects of each, and provide current data supporting their use. PMID:25049445

  7. Radiofrequency Ablation of Cancer

    SciTech Connect

    Friedman, Marc; Mikityansky, Igor; Kam, Anthony; Libutti, Steven K.; Walther, McClellan M.; Neeman, Ziv; Locklin, Julia K.; Wood, Bradford J.

    2004-09-15

    Radiofrequency ablation (RFA) has been used for over 18 years for treatment of nerve-related chronic pain and cardiac arrhythmias. In the last 10 years, technical developments have increased ablation volumes in a controllable, versatile, and relatively inexpensive manner. The host of clinical applications for RFA have similarly expanded. Current RFA equipment, techniques, applications, results, complications, and research avenues for local tumor ablation are summarized.

  8. High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy

    SciTech Connect

    McSkimming, Brian M. Speck, James S.; Chaix, Catherine

    2015-09-15

    In the present study, the authors report on a modified Riber radio frequency (RF) nitrogen plasma source that provides active nitrogen fluxes more than 30 times higher than those commonly used for plasma assisted molecular beam epitaxy (PAMBE) growth of gallium nitride (GaN) and thus a significantly higher growth rate than has been previously reported. GaN films were grown using N{sub 2} gas flow rates between 5 and 25 sccm while varying the plasma source's RF forward power from 200 to 600 W. The highest growth rate, and therefore the highest active nitrogen flux, achieved was ∼7.6 μm/h. For optimized growth conditions, the surfaces displayed a clear step-terrace structure with an average RMS roughness (3 × 3 μm) on the order of 1 nm. Secondary ion mass spectroscopy impurity analysis demonstrates oxygen and hydrogen incorporation of 1 × 10{sup 16} and ∼5 × 10{sup 17}, respectively. In addition, the authors have achieved PAMBE growth of GaN at a substrate temperature more than 150 °C greater than our standard Ga rich GaN growth regime and ∼100 °C greater than any previously reported PAMBE growth of GaN. This growth temperature corresponds to GaN decomposition in vacuum of more than 20 nm/min; a regime previously unattainable with conventional nitrogen plasma sources. Arrhenius analysis of the decomposition rate shows that samples with a flux ratio below stoichiometry have an activation energy greater than decomposition of GaN in vacuum while samples grown at or above stoichiometry have decreased activation energy. The activation energy of decomposition for GaN in vacuum was previously determined to be ∼3.1 eV. For a Ga/N flux ratio of ∼1.5, this activation energy was found to be ∼2.8 eV, while for a Ga/N flux ratio of ∼0.5, it was found to be ∼7.9 eV.

  9. Si(011)16x2 gas-source molecular beam epitaxy: Growth kinetics

    SciTech Connect

    Taylor, N.; Kim, H.; Desjardins, P.; Foo, Y. L.; Greene, J. E.

    2000-05-15

    The growth rates R{sub Si} of Si layers deposited on Si(011)''16x2'' by gas-source molecular beam epitaxy from Si{sub 2}H{sub 6} were determined as a function of temperature T{sub s} (400-975 degree sign C) and Si{sub 2}H{sub 6} flux J{sub Si{sub 2}}{sub H{sub 6}}(5.0x10{sup 15}-9.0x10{sup 16} cm{sup -2} s{sup -1}). R{sub Si} ranges from 0.0015 {mu}m h-1 at T{sub s}=400 degree sign C to 0.415 {mu}m h-1 at T{sub s}=975 degree sign C with J{sub Si{sub 2}}{sub H{sub 6}}=2.2x10{sup 16} cm{sup -2} s{sup -1}. In the surface-reaction-limited regime at T{sub s}<725 degree sign C, R{sub Si} initially exhibits an exponential decrease with 1/T{sub s}, then decreases at a slower rate at T{sub s}{<=}550 degree sign C as an additional deposition pathway becomes operative. In the impingement-flux-limited regime, 725{<=}T{sub s}{<=}900 degree sign C, R{sub Si} is independent of T{sub s} but increases linearly with J{sub Si{sub 2}}{sub H{sub 6}}. At T{sub s}>900 degree sign C, R{sub Si}(T{sub s}) increases with T{sub s} due to surface roughening. Overall, R{sub Si}(J{sub Si{sub 2}}{sub H{sub 6}},T{sub s}) is well described at T{sub s}{<=}900 degree sign C by a kinetic model incorporating two competing film growth mechanisms: (1) dissociative chemisorption of Si{sub 2}H{sub 6} onto dangling bonds followed by fast surface dissociation steps and second-order H{sub 2} desorption from the surface monohydride phase; and (2) Si{sub 2}H{sub 6} insertion into Si-H surface bonds followed by second-order desorption of SiH{sub 4}. (c) 2000 American Institute of Physics.

  10. Reaction dynamics of phenyl radicals in extreme environments: a crossed molecular beam study.

    PubMed

    Gu, Xibin; Kaiser, Ralf I

    2009-02-17

    Polycyclic aromatic hydrocarbons (PAHs)organic compounds that consist of fused benzene ringsand their hydrogen-deficient precursors have attracted extensive interest from combustion scientists, organic chemists, astronomers, and planetary scientists. On Earth, PAHs are toxic combustion products and a source of air pollution. In the interstellar medium, research suggests that PAHs play a role in unidentified infrared emission bands, diffuse interstellar bands, and the synthesis of precursor molecules to life. To build clean combustion devices and to understand the astrochemical evolution of the interstellar medium, it will be critical to understand the elementary reaction mechanisms under single collision conditions by which these molecules form in the gas phase. Until recently, this work had been hampered by the difficulty in preparing a large concentration of phenyl radicals, but the phenyl radical represents one of the most important radical species to trigger PAH formation in high-temperature environments. However, we have developed a method for producing these radical species and have undertaken a systematic experimental investigation. In this Account, we report on the chemical dynamics of the phenyl radical (C(6)H(5)) reactions with the unsaturated hydrocarbons acetylene (C(2)H(2)), ethylene (C(2)H(4)), methylacetylene (CH(3)CCH), allene (H(2)CCCH(2)), propylene (CH(3)CHCH(2)), and benzene (C(6)H(6)) utilizing the crossed molecular beams approach. For nonsymmetric reactants such as methylacetylene and propylene, steric effects and the larger cones of acceptance drive the addition of the phenyl radical to the nonsubstituted carbon atom of the hydrocarbon reactant. Reaction intermediates decomposed via atomic hydrogen loss pathways. In the phenyl-propylene system, the longer lifetime of the reaction intermediate yielded a more efficient energy randomization compared with the phenyl-methylacetylene system. Therefore, two reaction channels were open: hydrogen

  11. Selective molecular beam epitaxy of germanium on oxide-covered silicon

    NASA Astrophysics Data System (ADS)

    Li, Qiming

    This study demonstrates that Ge can be selectively grown on Si through openings in SiO2 nanotemplates by molecular beam epitaxy without applying selectivity-control agents. The SiO2 nanotemplates are created either by interferometric lithography or by "touchdown" process. The "touchdown" process takes advantage of the unique interaction between Ge and an ultra-thin layer of chemical SiO2. Due to the high concentration of OH groups in the chemical oxide layer, Ge readily diffuses through the oxide, segregates at the SiO2/Si interface, and creates dense nanoscale windows in the chemical oxide. Ge then selectively grows in the windows and coalesces into a high-quality relaxed Ge epilayer over the remaining SiO2. The high-quality and relaxation are attributed to three mechanisms: (1) the strain at the junction pad decays below the critical limit within 2 nm due to the nanoscale heterojunction; (2) the remaining SiO2 serves as artificially introduced 60° dislocations; and (3) the intermixing between Ge and Si at the heterojunction reduces the effective lattice mismatch. To understand the surface phenomena governing the selectivity, we further experimentally measure the desorption activation energy (Edes = 42 +/- 3 kJ/mol) of Ge on SiO2 surface. The low Edes gives rise to a high Ge desorption flux from the SiO2 surface and a low diffusion barrier ( Edif ˜ 13 kJ/mol), which in turn leads to a long characteristic diffusion length. Based on these findings, we further demonstrate that hexagonally packed, single-crystal Ge rings can be grown at the contact region between self-assembled SiO2 spheres and chemical oxide covered Si substrates. These SiO2 spheres provide a surface diffusion path, which guides the Ge adspecies to the substrate. The Ge adspecies on SiO2 spheres undergo surface diffusion as well as desorption, and a fraction of Ge adspecies aggregate at the sphere/substrate contact region to form epitaxial rings by "touchdown" through the chemical SiO2.

  12. Characteristics and device applications of erbium doped III-V semiconductors grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sethi, S.; Bhattacharya, P. K.

    1996-03-01

    We have studied the properties of molecular beam epitaxially (MBE)-grown Erdoped III-V semiconductors for optoelectronic applications. Optically excited Er3+ in insulating materials exhibits optical emission chiefly around 1.54 μm, in the range of minimum loss in silica fiber. It was thought, therefore, that an electrically pumped Er-doped semiconductor laser would find great applicability in fiber-optic communication systems. Exhaustive photoluminescence (PL) characterization was conducted on several of As-based III-V semiconductors doped with Er, on bulk as well as quantum-well structures. We did not observe any Errelated PL emission at 1.54 μm for any of the materials/structures studied, a phenomenon which renders impractical the realization of an Er-doped III-V semiconductor laser. Deep level transient spectroscopy studies were performed on GaAs and AlGaAs co-doped with Er and Si to investigate the presence of any Er-related deep levels. The lack of band-edge luminescence in the GaAs:Er films led us to perform carrier-lifetime measurements by electro-optic sampling of photoconductive transients generated in these films. We discovered lifetimes in the picosecond regime, tunable by varying the Er concentration in the films. We also found the films to be highly resistive, the resistivity increasing with increasing Er-concentration. Intensive structural characterization (double-crys-tal x-ray and transmission electron microscopy) performed by us on GaAs:Er epilayers indicates the presence of high-density nanometer-sized ErAs precipitates in MBE-grown GaAs:Er. These metallic nanoprecipitates probably form internal Schottky barriers within the GaAs matrix, which give rise to Shockley-Read-Hall recombination centers, thus accounting for both the high resistivities and the ultrashort carrier lifetimes. Optoelectronic devices fabricated included novel tunable (in terms of speed and responsivity) high-speed metal-semiconductor-metal (MSM) photodiodes made with Ga

  13. Electrical Characterization of Molecular Beam Epitaxy Grown Mercury-Cadmium Alloy Under Low Magnetic Field Strength

    NASA Astrophysics Data System (ADS)

    Wijewarnasuriya, P. S.

    HgCdTe alloy is currently the most important semiconductor material for IR detection technology. Different growth techniques are used to produce HgCdTe, but achieving a high-quality material is still a major objective in the field. Among the growth techniques for HgCdTe, molecular beam epitaxy (MBE) is one of the most promising, mainly because of its versatility. Furthermore, the growth by MBE is carried out at a low temperature which limits interdiffusion processes. The focus of this research is the understanding of the electrical properties of HgCdTe layers grown by MBE technique. Using a model based on a single discrete acceptor level near the valence band and a corresponding fully ionized donor level, a good fit to the observed Hall data on p-type epilayers was obtained. In some samples, another acceptor level was needed. Also, analysis of R _{h} data and low temperature mobilities indicated that the p-type MBE growth layers were highly compensated. This was also confirmed by mercury saturated annealing experiments. Annealing of (111)B epilayers with Hg pressure leads us to believe that Hg vacancies are responsible for the p-type character. The findings reveal that the electrical properties differ drastically between different growth orientations, with (111)B having the highest residual doping levels for a particular Cd composition. It is concluded that MBE growth for HgCdTe is essentially a Te rich growth and our understanding is that this extra Te is responsible for the n-type character in the epilayers. A comparison between HgCdTe twinned layers and twin-free layers has shown that electrically active acceptors and high hole mobilities are associated with the presence of twins. Incorporation of several foreign elements also tried and all were found to substitute the metal sites during growth. With magnetic field studies on R_ {h}, resistivity and conductivity tensor analysis, the band structure of the HgCdTe alloy is also investigated. Junction depth and the

  14. Crossed molecular beams study of O({sup 1}D) reactions with H{sub 2} molecules

    SciTech Connect

    Miau, T.T.

    1995-05-01

    Reaction dynamics of O({sup 1}D) atoms with H{sub 2} molecules was reinvestigated using the crossed molecular beams technique with pulsed beams. The O({sup 1}D) beam was generated by photodissociating O{sub 3} molecules at 248 nm. Time-of-flight spectra and the laboratory angular distribution of the OH products were measured. The derived OH product center-of-mass flux-velocity contour diagram shows more backward scattered intensity with respect to the O({sup 1}D) beam. In contrast to previous studies which show that the insertion mechanism is the dominant process, our results indicate that the contribution from the collinear approach of the O({sup 1}D) atom to the H{sub 2} molecule on the first excited state potential energy surface is significant and the energy barrier for the collinear approach is therefore minimal. Despite the increased time resolution in this experiment, no vibrational structure in the OH product time-of-flight spectra was resolved. This is in agreement with LIF studies, which have shown that the rotational distributions of the OH products in all vibrational states are broad and highly inverted.

  15. Effect of surface roughness and size of beam on squeeze-film damping—Molecular dynamics simulation study

    SciTech Connect

    Kim, Hojin; Strachan, Alejandro

    2015-11-28

    We use large-scale molecular dynamics (MD) to characterize fluid damping between a substrate and an approaching beam. We focus on the near contact regime where squeeze film (where fluid gap is comparable to the mean free path of the gas molecules) and many-body effects in the fluid become dominant. The MD simulations provide explicit description of many-body and non-equilibrium processes in the fluid as well as the surface topography. We study how surface roughness and beam width increases the damping coefficient due to their effect on fluid mobility. We find that the explicit simulations are in good agreement with prior direct simulation Monte Carlo results except at near-contact conditions where many-body effects in the compressed fluid lead the increased damping and weaker dependence on beam width. We also show that velocity distributions near the beam edges and for short gaps deviate from the Boltzmann distribution indicating a degree of local non-equilibrium. These results will be useful to parameterize compact models used for microsystem device-level simulations and provide insight into mesoscale simulations of near-contact damping.

  16. Ion and electron beam processing of condensed molecular solids to form thin films

    SciTech Connect

    Ruckman, M.W.; Strongin, M.; Mowlem, J.K.; Moore, J.F.; Strongin, D.R.

    1992-12-31

    Electron and ion beams can be used to deposit thin films and etch surfaces using gas phase precursors. However, the generation of undesirable gas phase products and the diffusion of the reactive species beyond the region irradiated by the electron or ion beam can limit selectivity. In this paper, the feasibility of processing condensed precursors such as diborane, tri-methyl aluminum, ammonia and water at 78 K with low energy ( 100--1000 eV) electron and ion beams (Ar{sup +}, N{sub 2}{sup +} and H{sub 2}{sup +}) ranging in current density from 50 nA to several {mu}a per cm{sup 2} is examined. It was found that boron, boron nitride and stoichiometric aluminum oxide films could be deposited from the condensed volatile; species using charged particle beams and some of the physical and chemical aspects and limitations of this new technique are discussed.

  17. Studies on electron-beam irradiation and plastic deformation of medical-grade ultra-high molecular weight polyethylene

    NASA Astrophysics Data System (ADS)

    Czaja, Krystyna; SudoŁ, Marek

    2011-03-01

    Separated and combined electron-beam irradiation and plastic deformation effects on the structures of ultra-high molecular weight polyethylene (UHMWPE) were studied. It was found that the concentration of carbonyl (ketones, esters and peresters), hydroxyl and vinyl groups increases with the growing dose of adsorbed electrons. It also tends to exhibit a slight increase in the melting point and crystallinity of the samples. A mechanical stress in the polymer was found to accelerate radiation-induced degradation. It was concluded that each of the factors studied (i.e. electron beam sterilization and plastic deformation) had a different impact on the polymer structure. The change in the sequence of action of these factors can dramatically influence the process of UHMWPE destruction. Some effects may be limited or enhanced by the action of other factors. Therefore, the resulting effects of destructive factors depend qualitatively and quantitatively on their intensity and order.

  18. Self-regulated growth of LaVO{sub 3} thin films by hybrid molecular beam epitaxy

    SciTech Connect

    Zhang, Hai-Tian; Engel-Herbert, Roman; Dedon, Liv R.; Martin, Lane W.

    2015-06-08

    LaVO{sub 3} thin films were grown on SrTiO{sub 3} (001) by hybrid molecular beam epitaxy. A volatile metalorganic precursor, vanadium oxytriisopropoxide (VTIP), and elemental La were co-supplied in the presence of a molecular oxygen flux. By keeping the La flux fixed and varying the VTIP flux, stoichiometric LaVO{sub 3} films were obtained for a range of cation flux ratios, indicating the presence of a self-regulated growth window. Films grown under stoichiometric conditions were found to have the largest lattice parameter, which decreased monotonically with increasing amounts of excess La or V. Energy dispersive X-ray spectroscopy and Rutherford backscattering measurements were carried out to confirm film compositions. Stoichiometric growth of complex vanadate thin films independent of cation flux ratios expands upon the previously reported self-regulated growth of perovskite titanates using hybrid molecular beam epitaxy, thus demonstrating the general applicability of this growth approach to other complex oxide materials, where a precise control over film stoichiometry is demanded by the application.

  19. Radiation-induced second primary cancer risks from modern external beam radiotherapy for early prostate cancer: impact of stereotactic ablative radiotherapy (SABR), volumetric modulated arc therapy (VMAT) and flattening filter free (FFF) radiotherapy

    NASA Astrophysics Data System (ADS)

    Murray, Louise J.; Thompson, Christopher M.; Lilley, John; Cosgrove, Vivian; Franks, Kevin; Sebag-Montefiore, David; Henry, Ann M.

    2015-02-01

    Risks of radiation-induced second primary cancer following prostate radiotherapy using 3D-conformal radiotherapy (3D-CRT), intensity-modulated radiotherapy (IMRT), volumetric modulated arc therapy (VMAT), flattening filter free (FFF) and stereotactic ablative radiotherapy (SABR) were evaluated. Prostate plans were created using 10 MV 3D-CRT (78 Gy in 39 fractions) and 6 MV 5-field IMRT (78 Gy in 39 fractions), VMAT (78 Gy in 39 fractions, with standard flattened and energy-matched FFF beams) and SABR (42.7 Gy in 7 fractions with standard flattened and energy-matched FFF beams). Dose-volume histograms from pelvic planning CT scans of three prostate patients, each planned using all 6 techniques, were used to calculate organ equivalent doses (OED) and excess absolute risks (EAR) of second rectal and bladder cancers, and pelvic bone and soft tissue sarcomas, using mechanistic, bell-shaped and plateau models. For organs distant to the treatment field, chamber measurements recorded in an anthropomorphic phantom were used to calculate OEDs and EARs using a linear model. Ratios of OED give relative radiation-induced second cancer risks. SABR resulted in lower second cancer risks at all sites relative to 3D-CRT. FFF resulted in lower second cancer risks in out-of-field tissues relative to equivalent flattened techniques, with increasing impact in organs at greater distances from the field. For example, FFF reduced second cancer risk by up to 20% in the stomach and up to 56% in the brain, relative to the equivalent flattened technique. Relative to 10 MV 3D-CRT, 6 MV IMRT or VMAT with flattening filter increased second cancer risks in several out-of-field organs, by up to 26% and 55%, respectively. For all techniques, EARs were consistently low. The observed large relative differences between techniques, in absolute terms, were very low, highlighting the importance of considering absolute risks alongside the corresponding relative risks, since when absolute

  20. Radiation-induced second primary cancer risks from modern external beam radiotherapy for early prostate cancer: impact of stereotactic ablative radiotherapy (SABR), volumetric modulated arc therapy (VMAT) and flattening filter free (FFF) radiotherapy.

    PubMed

    Murray, Louise J; Thompson, Christopher M; Lilley, John; Cosgrove, Vivian; Franks, Kevin; Sebag-Montefiore, David; Henry, Ann M

    2015-02-01

    Risks of radiation-induced second primary cancer following prostate radiotherapy using 3D-conformal radiotherapy (3D-CRT), intensity-modulated radiotherapy (IMRT), volumetric modulated arc therapy (VMAT), flattening filter free (FFF) and stereotactic ablative radiotherapy (SABR) were evaluated. Prostate plans were created using 10 MV 3D-CRT (78 Gy in 39 fractions) and 6 MV 5-field IMRT (78 Gy in 39 fractions), VMAT (78 Gy in 39 fractions, with standard flattened and energy-matched FFF beams) and SABR (42.7 Gy in 7 fractions with standard flattened and energy-matched FFF beams). Dose-volume histograms from pelvic planning CT scans of three prostate patients, each planned using all 6 techniques, were used to calculate organ equivalent doses (OED) and excess absolute risks (EAR) of second rectal and bladder cancers, and pelvic bone and soft tissue sarcomas, using mechanistic, bell-shaped and plateau models. For organs distant to the treatment field, chamber measurements recorded in an anthropomorphic phantom were used to calculate OEDs and EARs using a linear model. Ratios of OED give relative radiation-induced second cancer risks. SABR resulted in lower second cancer risks at all sites relative to 3D-CRT. FFF resulted in lower second cancer risks in out-of-field tissues relative to equivalent flattened techniques, with increasing impact in organs at greater distances from the field. For example, FFF reduced second cancer risk by up to 20% in the stomach and up to 56% in the brain, relative to the equivalent flattened technique. Relative to 10 MV 3D-CRT, 6 MV IMRT or VMAT with flattening filter increased second cancer risks in several out-of-field organs, by up to 26% and 55%, respectively. For all techniques, EARs were consistently low. The observed large relative differences between techniques, in absolute terms, were very low, highlighting the importance of considering absolute risks alongside the corresponding relative risks, since when absolute

  1. Dynamic contrast enhanced MRI as a predictor of vascular-targeted photodynamic focal ablation therapy outcome in prostate cancer post-failed external beam radiation therapy

    PubMed Central

    Barrett, Tristan; Davidson, Sean R.H.; Wilson, Brian C.; Weersink, Robert A.; Trachtenberg, John; Haider, Masoom A.

    2014-01-01

    Introduction: Photodynamic therapy (PDT) can be employed as a focal therapy for prostate cancer. Dynamic contrast-enhanced (DCE) magnetic resonance imaging (MRI) can potentially help identify tumour recurrence after failed external-beam radiotherapy (EBRT). The purpose of this study was to determine the ability of DCE-MRI to predict early response to PDT salvage treatment. Methods: Patients with post-EBRT prostate cancer recurrence were prospectively enrolled into a Phase I/II trial of PDT using WST09. A 15-patient subgroup of this cohort undergoing 1.5T DCE-MRI at baseline and 1-week post-PDT was retrospectively analyzed. The reference standard was prostate biopsy obtained 6 months post-PDT. Analysis was performed on a patient-by-patient basis, by prostate gland halves, and by prostate sextants. Results: Biopsy 6 months post-PDT identified cancer in 10/15 patients (66.7%), and in 24/90 sextants (26.7%). Residual cancer was identified in 22/37 sextants (59.5%) identified as being involved at baseline. DCE-MRI at 1 week correctly predicted recurrent disease with a sensitivity of 100% (10/10), specificity of 60% (3/5), positive predictive value of 83.3% (10/12), negative predictive value of 100% (3/3), and an overall accuracy of 86.7%, (13/15). When analysis was performed on prostate halves, the sensitivity and negative predictive value remained at 100%, with an improvement in specificity to 88.2% (15/17). The overall accuracy of DCE-MRI was similar regardless of analysis method: 86.7% on a patient-by-patient basis, 86.7% by prostate half and 83.3% by sextant. Changes in prostate-specific antigen (PSA) did not correlate to response. Conclusion: DCE-MRI shows promise as a tool to predict successful outcome when performed 1 week post-PDT and could potentially be used to inform the need for re-treatment at an early time-point. PMID:25408811

  2. GaN/AlN Multilayer Superlattices Synthesized by Pulsed Laser Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Rohatgi, Nishith; Sharma, Ajay K.; Kvit, Alex; Narayan, J.; Muth, J. F.; Kolbas, R. M.

    2000-03-01

    We have synthesized GaN/AlN multilayer superlattices on sapphire where GaN is a quantum well and AlN acts as a barrier for the carriers. The well thickness has been varied in several samples while keeping the barrier thickness constant. We have grown 15 such alternate layers in each sample. Pulsed laser-MBE has been used in this work wherein stoichiometric GaN and AlN targets were ablated by UV laser (λ=248 nm) in background vacuum 5X10-10 Torr. The layer-by-layer growth of the heterostructures in laser-MBE makes it ideal for fabricating ultra thin layers such as quantum wells. The evidence of quantum wells was shown by X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). The microstructure, interfaces, well thickness and defects have been characterized by these techniques. The optical properties such as transmission, absorbance and photoluminescence have been studied.

  3. Simulation of crystalline beams in storage rings using molecular dynamics technique

    NASA Astrophysics Data System (ADS)

    Meshkov, I.; Katayama, T.; Sidorin, A.; Smirnov, A.; Syresin, E.; Trubnikov, G.; Tsutsui, H.

    2006-03-01

    Achieving very low temperatures in the beam rest frame can present new possibilities in accelerator physics. Increasing luminosity in the collider and in experiments with targets is a very important asset for investigating rare radioactive isotopes. The ordered state of circulating ion beams was observed at several storage rings: NAP-M [Budker, et al., in: Proceedings of the 4th All-Union Conference on Charged-Particle Accelerators [in Russian], vol. 2, Nauka, Moscow, 1975, p. 309; Budker et al., Part. Accel. 7 (1976) 197; Budker et al., At. Energ. 40 (1976) 49. E. Dementev, N. Dykansky, A. Medvedko et al., Prep. CERN/PS/AA 79-41, Geneva, 1979] (Novosibirsk), ESR [M. Steck et al., Phys. Rev. Lett. 77 (1996) 3803] and SIS [Hasse and Steck, Ordered ion beams, in: Proceeding of EPAC '2000] (Darmstadt), CRYRING [Danared et al., Observation of ordered ion beams in CRYRING, in: Proceeding of PAC '2001] (Stockholm) and PALLAS [Schramm et al., in: J.L. Duggan (Eds.), Proceedings of the Conference on Appl. of Acc. in Research and Industry AIP Conference Proceedings, p. 576 (to be published)] (Munich). In this report, the simulation of 1D crystalline beams with BETACOOL code is presented. The sudden reduction of momentum spread in the ESR experiment is described with this code. Simulation shows good agreement with experimental results and also with the intrabeam scattering (IBS) theory [Martini, Intrabeam scattering in the ACOOL-AA machines, CERN PS/84-9 AA, Geneva, 1984]. The code was used to calculate characteristics of the ordered state of ion beams for the TARN-II [Katayama, TARN II project, in: Proceedings of the IUCF workshop on nuclear physics with stored cooled beams, Spencer, IN, USA, 1984].

  4. Molecular beam mass spectrometer equipped with a catalytic wall reactor for in situ studies in high temperature catalysis research

    SciTech Connect

    Horn, R.; Ihmann, K.; Ihmann, J.; Jentoft, F.C.; Geske, M.; Taha, A.; Pelzer, K.; Schloegl, R.

    2006-05-15

    A newly developed apparatus combining a molecular beam mass spectrometer and a catalytic wall reactor is described. The setup has been developed for in situ studies of high temperature catalytic reactions (>1000 deg. C), which involve besides surface reactions also gas phase reactions in their mechanism. The goal is to identify gas phase radicals by threshold ionization. A tubular reactor, made from the catalytic material, is positioned in a vacuum chamber. Expansion of the gas through a 100 {mu}m sampling orifice in the reactor wall into differentially pumped nozzle, skimmer, and collimator chambers leads to the formation of a molecular beam. A quadrupole mass spectrometer with electron impact ion source designed for molecular beam inlet and threshold ionization measurements is used as the analyzer. The sampling time from nozzle to detector is estimated to be less than 10 ms. A detection time resolution of up to 20 ms can be reached. The temperature of the reactor is measured by pyrometry. Besides a detailed description of the setup components and the physical background of the method, this article presents measurements showing the performance of the apparatus. After deriving the shape and width of the energy spread of the ionizing electrons from measurements on N{sub 2} and He we estimated the detection limit in threshold ionization measurements using binary mixtures of CO in N{sub 2} to be in the range of several hundreds of ppm. Mass spectra and threshold ionization measurements recorded during catalytic partial oxidation of methane at 1250 deg. C on a Pt catalyst are presented. The detection of CH{sub 3}{center_dot} radicals is successfully demonstrated.

  5. Ablation of CsI by XUV Capillary Discharge Laser

    NASA Astrophysics Data System (ADS)

    Pira, Peter; Zelinger, Zdenek; Burian, Tomas; Vysin, Ludek; Wild, Jan; Juha, Libor; Lancok, Jan; Nevrly, Vaclav

    2015-09-01

    XUV capillary discharge laser (CDL) is suitable source for ablation of ionic crystals as material which is difficult to ablate by conventional laser. Single crystal of CsI was irradiated by 2.5 ns pulses of a 46.9 nm radiation at 2 Hz. The CDL beam was focused by Sc/Si multilayer spherical mirror. Attenuation length of CsI for this wavelength is 38 nm. Ablation rate was calculated after irradiation of 10, 20, 30, 50 and 100 pulses. Depth of the craters was measured by optical profiler (white light interferometry). Ablation threshold was determined from craters after irradiation with the changing fluence and compared with modeling by XUV-ABLATOR.

  6. Laser ablation of a turbid medium: Modeling and experimental results

    SciTech Connect

    Brygo, F.; Semerok, A.; Weulersse, J.-M.; Thro, P.-Y.; Oltra, R.

    2006-08-01

    Q-switched Nd:YAG laser ablation of a turbid medium (paint) is studied. The optical properties (absorption coefficient, scattering coefficient, and its anisotropy) of a paint are determined with a multiple scattering model (three-flux model), and from measurements of reflection-transmission of light through thin layers. The energy deposition profiles are calculated at wavelengths of 532 nm and 1.064 {mu}m. They are different from those described by a Lambert-Beer law. In particular, the energy deposition of the laser beam is not maximum on the surface but at some depth inside the medium. The ablated rate was measured for the two wavelengths and compared with the energy deposition profile predicted by the model. This allows us to understand the evolution of the ablated depth with the wavelength: the more the scattering coefficient is higher, the more the ablated depth and the threshold fluence of ablation decrease.

  7. Sprayable lightweight ablative coating

    NASA Technical Reports Server (NTRS)

    Simpson, William G. (Inventor); Sharpe, Max H. (Inventor); Hill, William E. (Inventor)

    1991-01-01

    An improved lightweight, ablative coating is disclosed that may be spray applied and cured without the development of appreciable shrinkage cracks. The ablative mixture consists essentially of phenolic microballoons, hollow glass spheres, glass fibers, ground cork, a flexibilized resin binder, and an activated colloidal clay.

  8. Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhao, S.; Woo, S. Y.; Sadaf, S. M.; Wu, Y.; Pofelski, A.; Laleyan, D. A.; Rashid, R. T.; Wang, Y.; Botton, G. A.; Mi, Z.

    2016-08-01

    Self-organized AlGaN nanowires by molecular beam epitaxy have attracted significant attention for deep ultraviolet optoelectronics. However, due to the strong compositional modulations under conventional nitrogen rich growth conditions, emission wavelengths less than 250 nm have remained inaccessible. Here we show that Al-rich AlGaN nanowires with much improved compositional uniformity can be achieved in a new growth paradigm, wherein a precise control on the optical bandgap of ternary AlGaN nanowires can be achieved by varying the substrate temperature. AlGaN nanowire LEDs, with emission wavelengths spanning from 236 to 280 nm, are also demonstrated.

  9. Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO{sub 2{+-}x}

    SciTech Connect

    Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert

    2012-12-01

    We have conducted a detailed thin film growth structure of oxygen engineered monoclinic HfO{sub 2{+-}x} grown by reactive molecular beam epitaxy. The oxidation conditions induce a switching between (111) and (002) texture of hafnium oxide. The band gap of oxygen deficient hafnia decreases with increasing amount of oxygen vacancies by more than 1 eV. For high oxygen vacancy concentrations, defect bands form inside the band gap that induce optical transitions and p-type conductivity. The resistivity changes by several orders of magnitude as a function of oxidation conditions. Oxygen vacancies do not give rise to ferromagnetic behavior.

  10. Molecular beam epitaxy and characterization of thin Bi2Se3 films on Al2O3 (110)

    NASA Astrophysics Data System (ADS)

    Tabor, Phillip; Keenan, Cameron; Urazhdin, Sergei; Lederman, David

    2011-07-01

    The structural and electronic properties of thin Bi2Se3 films grown on Al2O3 (110) by molecular beam epitaxy are investigated. The epitaxial films grow in the Frank-van der Merwe mode and are c-axis oriented. They exhibit the highest crystallinity, the lowest carrier concentration, and optimal stoichiometry at a substrate temperature of 200 °C determined by the balance between surface kinetics and desorption of Se. The crystallinity of the films improves with increasing Se/Bi flux ratio. Our results enable studies of thin topological insulator films on inert, non-conducting substrates that allow optical access to both film surfaces.

  11. Growth and characterization of GaAs layers on Si substrates by migration-enhanced molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Kim, Jae-Hoon; Liu, John K.; Radhakrishnan, Gouri; Katz, Joseph; Sakai, Shiro

    1988-01-01

    Migration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layer on Si substrates (GaAs/Si) are reported. The MEMBE growth method is described, and material properties are compared with those of normal two-step MBE-grown or in situ annealed layers. Micrographs of cross-section view transmission electron microscopy and scanning surface electron microscopy of MEMBE-grown GaAs/Si showed dislocation densities of 10 to the 7th/sq cm. AlGaAs/GaAs double heterostructures have been successfully grown on MEMBE GaAs/Si by both metalorganic chemical vapor deposition and liquid phase epitaxy.

  12. Catalyst-free growth of Bi{sub 2}Te{sub 3} nanostructures by molecular beam epitaxy

    SciTech Connect

    Harrison, S. E.; Schönherr, P.; Hesjedal, T.; Huo, Y.; Harris, J. S.

    2014-10-13

    We present the catalyst-free growth of binary Bi{sub 2}Te{sub 3} topological insulator nanostructures on c-plane sapphire substrates by molecular beam epitaxy. Dense arrays of single-crystalline nanostructures, growing along the [110] direction, are obtained for substrate temperatures ranging from ∼180 °C to 260 °C. The growth rate and shape of the nanostructures are highly temperature-dependent. The microscopic study of the nanostructures and their relationship to the underlying Bi{sub 2}Te{sub 3} thin film gives an insight into the growth mechanism.

  13. In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy.

    PubMed

    Zuo, Zheng; Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zheng, Jian-Guo; Liu, Jianlin

    2015-01-01

    Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der Waals materials remains challenging. Here we demonstrate a solution for fabricating van der Waals heterostructures. Graphene/hexagonal boron nitride (h-BN) heterostructures were synthesized on cobalt substrates by using molecular beam epitaxy. Various characterizations were carried out to evaluate the heterostructures. Wafer-scale heterostructures consisting of single-layer/bilayer graphene and multilayer h-BN were achieved. The mismatch angle between graphene and h-BN is below 1°.

  14. Fabrication of IrSi(3)/p-Si Schottky diodes by a molecular beam epitaxy technique

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Iannelli, J. M.

    1990-01-01

    IrSi(3)/p-Si Schottky diodes have been fabricated by a molecular beam epitaxy technique at 630 C. Good surface morphology was observed for IrSi(3) layers grown at temperatures below 680 C, and an increasing tendency to form islands is observed in samples grown at higher temperatures. Good diode current-voltage characteristics were observed and Schottky barrier heights of 0.14-0.18 eV were determined by activation energy analysis and spectral response measurement.

  15. Room temperature weak ferromagnetism in Sn1-xMnxSe2 2D films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Dong, Sining; Liu, Xinyu; Li, Xiang; Kanzyuba, Vasily; Yoo, Taehee; Rouvimov, Sergei; Vishwanath, Suresh; Xing, Huili G.; Jena, Debdeep; Dobrowolska, Margaret; Furdyna, Jacek K.

    2016-03-01

    We discuss growth and magnetic properties of high-quality two dimensional (2D) Sn1-xMnxSe2 films. Thin films of this 2D ternary alloy with a wide range of Mn concentrations were successfully grown by molecular beam epitaxy. Mn concentrations up to x ≈ 0.60 were achieved without destroying the crystal structure of the parent SnSe2 2D system. Most important, the specimens show clear weak ferromagnetic behavior above room temperature, which should be of interest for 2D spintronic applications.

  16. Nucleation, Growth, and Bundling of GaN Nanowires in Molecular Beam Epitaxy: Disentangling the Origin of Nanowire Coalescence.

    PubMed

    Kaganer, Vladimir M; Fernández-Garrido, Sergio; Dogan, Pinar; Sabelfeld, Karl K; Brandt, Oliver

    2016-06-01

    We investigate the nucleation, growth, and coalescence of spontaneously formed GaN nanowires in molecular beam epitaxy combining the statistical analysis of scanning electron micrographs with Monte Carlo growth models. We find that (i) the nanowire density is limited by the shadowing of the substrate from the impinging fluxes by already existing nanowires, (ii) shortly after the nucleation stage, nanowire radial growth becomes negligible, and (iii) coalescence is caused by bundling of nanowires. The latter phenomenon is driven by the gain of surface energy at the expense of the elastic energy of bending and becomes energetically favorable once the nanowires exceed a certain critical length. PMID:27168127

  17. The thickness-dependent dynamic magnetic property of Co2FeAl films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Qiao, Shuang; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui

    2014-10-01

    Co2FeAl films with different thickness were prepared at different temperature by molecular beam epitaxy. Their dynamic magnetic property was studied by the time-resolved magneto-optical Kerr effect measurements. It is observed that the intrinsic damping factor of Co2FeAl for [100] orientation is not related to the film's thickness and magnetic anisotropy as well as temperature at high-field regime, but increases with structural disorder of Co2FeAl. The dominant contribution from the inhomogeneous magnetic anisotropy is revealed to be responsible for the observed extremely nonlinear and drastic field-dependent damping factors at low-field regime.

  18. Nucleation, Growth, and Bundling of GaN Nanowires in Molecular Beam Epitaxy: Disentangling the Origin of Nanowire Coalescence.

    PubMed

    Kaganer, Vladimir M; Fernández-Garrido, Sergio; Dogan, Pinar; Sabelfeld, Karl K; Brandt, Oliver

    2016-06-01

    We investigate the nucleation, growth, and coalescence of spontaneously formed GaN nanowires in molecular beam epitaxy combining the statistical analysis of scanning electron micrographs with Monte Carlo growth models. We find that (i) the nanowire density is limited by the shadowing of the substrate from the impinging fluxes by already existing nanowires, (ii) shortly after the nucleation stage, nanowire radial growth becomes negligible, and (iii) coalescence is caused by bundling of nanowires. The latter phenomenon is driven by the gain of surface energy at the expense of the elastic energy of bending and becomes energetically favorable once the nanowires exceed a certain critical length.

  19. Peculiarly strong room-temperature ferromagnetism from low Mn-doping in ZnO grown by molecular beam epitaxy

    SciTech Connect

    Zuo Zheng; Morshed, Muhammad; Liu Jianlin; Beyermann, W. P.; Zheng Jianguo; Xin Yan

    2013-03-15

    Strong room-temperature ferromagnetism is demonstrated in single crystalline Mn-doped ZnO thin films grown by molecular beam epitaxy. Very low Mn doping concentration is investigated, and the measured magnetic moment is much larger than what is expected for an isolated ion based on Hund's rules. The ferromagnetic behavior evolves with Mn concentration. Both magnetic anisotropy and anomalous Hall effect confirm the intrinsic nature of ferromagnetism. While the Mn dopant plays a crucial role, another entity in the system is needed to explain the observed large magnetic moments.

  20. High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Koblmueller, G.; Wu, F.; Mates, T.; Speck, J. S.; Fernandez-Garrido, S.; Calleja, E.

    2007-11-26

    An alternative approach is presented for the plasma-assisted molecular beam epitaxy of high-quality GaN. Under N-rich growth conditions, an unexpected layer-by-layer growth mode was found for a wide range of growth temperatures in the GaN thermal decomposition regime (>750 deg. C). Consequently, superior surface morphologies with roughness of less than 1 nm (rms) have been achieved. For lightly Si-doped GaN films, room-temperature electron mobilities exceeding 1100 cm{sup 2}/V s were measured, surpassing the commonly insulating nature of GaN grown under N-rich conditions at low temperature.

  1. Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

    SciTech Connect

    Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M. A.; Calleja, E.; Jahn, U.; Trampert, A.

    2011-09-26

    This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650 deg. C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding white emission.

  2. A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)

    SciTech Connect

    Fernandez-Garrido, S.; Grandal, J.; Calleja, E.; Sanchez-Garcia, M. A.; Lopez-Romero, D.

    2009-12-15

    The morphology of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) was systematically studied as a function of impinging Ga/N flux ratio and growth temperature (730-850 deg. C). Two different growth regimes were identified: compact and nanocolumnar. A growth diagram was established as a function of growth parameters, exhibiting the transition between growth regimes, and showing under which growth conditions GaN cannot be grown due to thermal decomposition and Ga desorption. Present results indicate that adatoms diffusion length and the actual Ga/N ratio on the growing surface are key factors to achieve nanocolumnar growth.

  3. Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (2021) substrates

    SciTech Connect

    Sawicka, M.; Grzanka, S.; Skierbiszewski, C.; Turski, H.; Muziol, G.; Krysko, M.; Grzanka, E.; Sochacki, T.; Siekacz, M.; Kucharski, R.

    2013-03-18

    Multi-quantum well (MQW) structures and light emitting diodes (LEDs) were grown on semipolar (2021) and polar (0001) GaN substrates by plasma-assisted molecular beam epitaxy. The In incorporation efficiency was found to be significantly lower for the semipolar plane as compared to the polar one. The semipolar MQWs exhibit a smooth surface morphology, abrupt interfaces, and a high photoluminescence intensity. The electroluminescence of semipolar (2021) and polar (0001) LEDs fabricated in the same growth run peaks at 387 and 462 nm, respectively. Semipolar LEDs with additional (Al,Ga)N cladding layers exhibit a higher optical output power but simultaneously a higher turn-on voltage.

  4. Chirped-pulse manipulated carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAs

    SciTech Connect

    Lee, Chao-Kuei; Lin, Yuan-Yao; Lin, Sung-Hui; Lin, Gong-Ru; Pan, Ci-Ling

    2014-04-28

    Chirped pulse controlled carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAs are investigated by degenerate pump-probe technique. Varying the chirped condition of excited pulse from negative to positive increases the carrier relaxation time so as to modify the dispersion and reshape current pulse in time domain. The spectral dependence of carrier dynamics is analytically derived and explained by Shockley-Read Hall model. This observation enables the new feasibility of controlling carrier dynamics in ultrafast optical devices via the chirped pulse excitations.

  5. Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

    1989-01-01

    Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

  6. A buffer gas cooled beam of barium monohydride

    NASA Astrophysics Data System (ADS)

    Iwata, Geoffrey; Tarallo, Marco; Zelevinsky, Tanya

    2016-05-01

    Significant advances in direct laser cooling of diatomic molecules have opened up a wide array of molecular species to precision studies spanning many-body physics, quantum collisions and ultracold dissociation. We present a cryogenic beam source of barium monohydride (BaH), and study laser ablation of solid precursor targets as well as helium buffer gas cooling dynamics. Additionally, we cover progress towards a molecular magneto-optical trap, with spectroscopic studies of relevant cooling transitions in the B2 Σ <--X2 Σ manifold in laser ablated molecules, including resolution of hyperfine structure and precision measurements of the vibrational Frank-Condon factors. Finally, we examine the feasibility of photo dissociation of trapped BaH molecules to yield optically accessible samples of ultracold hydrogen.

  7. Nd:YAG laser cleaning of ablation debris from excimer-laser-ablated polyimide

    NASA Astrophysics Data System (ADS)

    Gu, Jianhui; Low, Jason; Lim, Puay K.; Lim, Pean

    2001-10-01

    In the processing of excimer laser ablation of nozzles on polyimide in air, both gases like CO2, CO and HCN and solid debris including C2 approximately C12 are produced in laser ablation area. In this paper, we reported for the first time a Nd:YAG laser cleaning of ablation debris generated in excimer laser ablation of polyimide. It demonstrated effective cleaning with the advantages of shortening cleaning cycle time and simplifying cleaning process. The laser used for the cleaning was a Q-switched and frequency doubled Nd:YAG laser with wavelength of 532 nm and repetition rate of 10 Hz. The laser cleaning effect was compared with conventional plasma ashing. AFM measurement showed that the Nd:YAG laser cleaning had no damage to the substrate. XPS results indicated that the polyimide surface cleaned with laser beam had a lower oxygen/carbon ratio than that of plasma ashing. The study shows that frequency doubled Nd:YAG laser cleaning is effective in ablation debris removal from excimer laser ablated polyimide.

  8. Structural and Magnetic Phase Transitions in Manganese Arsenide Thin-Films Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Jaeckel, Felix Till

    Phase transitions play an important role in many fields of physics and engineering, and their study in bulk materials has a long tradition. Many of the experimental techniques involve measurements of thermodynamically extensive parameters. With the increasing technological importance of thin-film technology there is a pressing need to find new ways to study phase transitions at smaller length-scales, where the traditional methods are insufficient. In this regard, the phase transitions observed in thin-films of MnAs present interesting challenges. As a ferromagnetic material that can be grown epitaxially on a variety of technologically important substrates, MnAs is an interesting material for spintronics applications. In the bulk, the first order transition from the low temperature ferromagnetic alpha-phase to the beta-phase occurs at 313 K. The magnetic state of the beta-phase has remained controversial. A second order transition to the paramagnetic gamma-phase takes place at 398 K. In thin-films, the anisotropic strain imposed by the substrate leads to the interesting phenomenon of coexistence of alpha- and beta-phases in a regular array of stripes over an extended temperature range. In this dissertation these phase transitions are studied in films grown by molecular beam epitaxy on GaAs (001). The films are confirmed to be of high structural quality and almost purely in the A0 orientation. A diverse set of experimental techniques, germane to thin-film technology, is used to probe the properties of the film: Temperature-dependent X-ray diffraction and atomic-force microscopy (AFM), as well as magnetotransport give insights into the structural properties, while the anomalous Hall effect is used as a probe of magnetization during the phase transition. In addition, reflectance difference spectroscopy (RDS) is used as a sensitive probe of electronic structure. Inductively coupled plasma etching with BCl3 is demonstrated to be effective for patterning MnAs. We show

  9. Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces

    SciTech Connect

    King, Sean W. Davis, Robert F.; Nemanich, Robert J.

    2014-11-01

    Scandium nitride (ScN) is a group IIIB transition metal nitride semiconductor with numerous potential applications in electronic and optoelectronic devices due to close lattice matching with gallium nitride (GaN). However, prior investigations of ScN have focused primarily on heteroepitaxial growth on substrates with a high lattice mismatch of 7%–20%. In this study, the authors have investigated ammonia (NH{sub 3}) gas source molecular beam epitaxy (NH{sub 3}-GSMBE) of ScN on more closely lattice matched silicon carbide (SiC) and GaN surfaces (<3% mismatch). Based on a thermodynamic analysis of the ScN phase stability window, NH{sub 3}-GSMBE conditions of 10{sup −5}–10{sup −4} Torr NH{sub 3} and 800–1050 °C where selected for initial investigation. In-situ x-ray photoelectron spectroscopy (XPS) and ex-situ Rutherford backscattering measurements showed all ScN films grown using these conditions were stoichiometric. For ScN growth on 3C-SiC (111)-(√3 × √3)R30° carbon rich surfaces, the observed attenuation of the XPS Si 2p and C 1s substrate core levels with increasing ScN thickness indicated growth initiated in a layer-by-layer fashion. This was consistent with scanning electron microscopy (SEM) images of 100–200 nm thick films that revealed featureless surfaces. In contrast, ScN films grown on 3C-SiC (111)-(3 × 3) and 3C-SiC (100)-(3 × 2) silicon rich surfaces were found to exhibit extremely rough surfaces in SEM. ScN films grown on both 3C-SiC (111)-(√3 × √3)R30° and 2H-GaN (0001)-(1 × 1) epilayer surfaces exhibited hexagonal (1 × 1) low energy electron diffraction patterns indicative of (111) oriented ScN. X-ray diffraction ω-2θ rocking curve scans for these same films showed a large full width half maximum of 0.29° (1047 arc sec) consistent with transmission electron microscopy images that revealed the films to be poly-crystalline with columnar grains oriented at ≈15° to the [0001] direction of the

  10. A laser ablation source for offline ion production at LEBIT

    NASA Astrophysics Data System (ADS)

    Izzo, C.; Bollen, G.; Bustabad, S.; Eibach, M.; Gulyuz, K.; Morrissey, D. J.; Redshaw, M.; Ringle, R.; Sandler, R.; Schwarz, S.; Valverde, A. A.

    2016-06-01

    A laser ablation ion source has been developed and implemented at the Low-Energy Beam and Ion Trap (LEBIT) facility at the National Superconducting Cyclotron Laboratory. This offline ion source enhances the capabilities of LEBIT by providing increased access to ions used for calibration measurements and checks of systematic effects as well as stable and long-lived ions of scientific interest. The design of the laser ablation ion source and a demonstration of its successful operation are presented.

  11. Focused Ion beam source method and Apparatus

    SciTech Connect

    Pellin, Michael J.; Lykke, Keith R.; Lill, Thorsten B.

    1998-08-17

    A focused ion beam having a cross section of submicron diameter, a high ion current, and a narrow energy range is generated from a target comprised of particle source material by laser ablation. The method involves directing a laser beam having a cross section of critical diameter onto the target, producing a cloud of laser ablated particles having unique characteristics, and extracting and focusing a charged particle beam from the laser ablated cloud. The method is especially suited for producing focused ion beams for semiconductor device analysis and modification.

  12. Focused ion beam source method and apparatus

    DOEpatents

    Pellin, Michael J.; Lykke, Keith R.; Lill, Thorsten B.

    2000-01-01

    A focused ion beam having a cross section of submicron diameter, a high ion current, and a narrow energy range is generated from a target comprised of particle source material by laser ablation. The method involves directing a laser beam having a cross section of critical diameter onto the target, producing a cloud of laser ablated particles having unique characteristics, and extracting and focusing a charged particle beam from the laser ablated cloud. The method is especially suited for producing focused ion beams for semiconductor device analysis and modification.

  13. Molecular beam studies of unimolecular and bimolecular chemical reaction dynamics using VUV synchrotron radiation as a product probe

    SciTech Connect

    Blank, D.A.

    1997-08-01

    This dissertation describes the use of a new molecular beam apparatus designed to use tunable VUV synchrotron radiation for photoionization of the products from scattering experiments. The apparatus was built at the recently constructed Advanced Light Source at Lawrence Berkeley National Laboratory, a third generation 1-2 GeV synchrotron radiation source. The new apparatus is applied to investigations of the dynamics of unimolecular reactions, photodissociation experiments, and bimolecular reactions, crossed molecular beam experiments. The first chapter describes the new apparatus and the VUV radiation used for photoionization. This is followed by a number of examples of the many advantages provided by using VUV photoionization in comparison with the traditional technique of electron bombardment ionization. At the end of the chapter there is a discussion of the data analysis employed in these scattering experiments. The remaining four chapters are complete investigations of the dynamics of four chemical systems using the new apparatus and provide numerous additional examples of the advantages provided by VUV photoionizaiton of the products. Chapters 2-4 are photofragment translational spectroscopy studies of the photodissociation dynamics of dimethyl sulfoxide, acrylonitrile, and vinyl chloride following absorption at 193 mn. All of these systems have multiple dissociation channels and provide good examples of the ability of the new apparatus to unravel the complex UV photodissociation dynamics that can arise in small polyatomic molecules.

  14. Laser ablation of dyes

    NASA Astrophysics Data System (ADS)

    Späth, M.; Stuke, M.

    1992-01-01

    High density 50 μs pulses of the UV dyes PPF, POPOP and BBO and of two dyes in the visible region, Xanthen N92 and Fluorol 7GA were generated by laser ablation. Dye powders were pressed with 7800 kp/cm 2 in round pellets which were ablated by exposure to KrF excimer laser radiation (248 nm) at a fluence of 100 mJ/cm 2. The ablation cloud was optically activated with a XeCl excimer laser. Its fluorescence spectrum was measured and was identified as a dye vapour fluorescence spectrum by comparison to conventional dye solution and dye vapour spectra. The dye cloud is not deflected in an electric field (10 6 V/m). By changing the delay time between the ablation laser and the focused activation laser, the velocity distribution of the ablated dye was measured. Its maximum is at 600 m/s for PPF. Knowing the thickness of the ablated dye layer per shot (300 Å) and the size of the ablation cloud (pictures of a video camera), one can estimate the maximum density of the dye in the gas pulse to be 10 -5 mol/ l in the range of concentration of lasing dyes. However, no lasing was observed up to now.

  15. Navigation Systems for Ablation

    PubMed Central

    Wood, B. J.; Kruecker, J.; Abi-Jaoudeh, N; Locklin, J.; Levy, E.; Xu, S.; Solbiati, L.; Kapoor, A.; Amalou, H.; Venkatesan, A.

    2010-01-01

    Navigation systems, devices and intra-procedural software are changing the way we practice interventional oncology. Prior to the development of precision navigation tools integrated with imaging systems, thermal ablation of hard-to-image lesions was highly dependent upon operator experience, spatial skills, and estimation of positron emission tomography-avid or arterial-phase targets. Numerous navigation systems for ablation bring the opportunity for standardization and accuracy that extends our ability to use imaging feedback during procedures. Existing systems and techniques are reviewed, and specific clinical applications for ablation are discussed to better define how these novel technologies address specific clinical needs, and fit into clinical practice. PMID:20656236

  16. Historical Account And Branching To Rarefied Gas Dynamics Of Atomic and Molecular Beams : A Continuing And Fascinating Odyssey Commemorated By Nobel Prizes Awarded To 23 Laureates In Physics And Chemistry

    NASA Astrophysics Data System (ADS)

    Campargue, Roger

    2005-05-01

    This Historical Account derived in part from D. R. Herschbach was presented as an opening lecture of the Molecular Beam Session organized at the 24th International Symposium on Rarefied Gas Dynamics held in Bari, Italy, in July 2004. The emphasis is on the impressive results due to the molecular beam techniques in the last century. The first section summarizes the historical beam experiments performed by 14 Nobel Prize laureates having used the thermally effusive sources to establish the basic principles of Modern Physics. The second section is on the branching of Molecular Beams to Rarefied Gas Dynamics having permitted to investigate the physics of supersonic free jets and transform the molecular beam techniques. Finally, the last section relates the spectacular molecular beam experiments in helium free jet ultracooling, molecular spectroscopy, chemical reaction dynamics, clustering and modification of low density matter, and biomolecule mass spectrometry, rewarded by nine Nobel Prizes in Chemistry from 1986 to 2002.

  17. Laser ablation for the synthesis of carbon nanotubes

    NASA Technical Reports Server (NTRS)

    Holloway, Brian C. (Inventor); Eklund, Peter C. (Inventor); Smith, Michael W. (Inventor); Jordan, Kevin C. (Inventor); Shinn, Michelle (Inventor)

    2012-01-01

    Single walled carbon nanotubes are produced in a novel apparatus by the laser-induced ablation of moving carbon target. The laser used is of high average power and ultra-fast pulsing. According to various preferred embodiments, the laser produces and output above about 50 watts/cm.sup.2 at a repetition rate above about 15 MHz and exhibits a pulse duration below about 10 picoseconds. The carbon, carbon/catalyst target and the laser beam are moved relative to one another and a focused flow of "side pumped", preheated inert gas is introduced near the point of ablation to minimize or eliminate interference by the ablated plume by removal of the plume and introduction of new target area for incidence with the laser beam. When the target is moved relative to the laser beam, rotational or translational movement may be imparted thereto, but rotation of the target is preferred.

  18. Laser ablation for the synthesis of carbon nanotubes

    NASA Technical Reports Server (NTRS)

    Holloway, Brian C. (Inventor); Eklund, Peter C. (Inventor); Smith, Michael W. (Inventor); Jordan, Kevin C. (Inventor); Shinn, Michelle (Inventor)

    2010-01-01

    Single walled carbon nanotubes are produced in a novel apparatus by the laser-induced ablation of moving carbon target. The laser used is of high average power and ultra-fast pulsing. According to various preferred embodiments, the laser produces an output above about 50 watts/cm.sup.2 at a repetition rate above about 15 MHz and exhibits a pulse duration below about 10 picoseconds. The carbon, carbon/catalyst target and the laser beam are moved relative to one another and a focused flow of side pumped, preheated inert gas is introduced near the point of ablation to minimize or eliminate interference by the ablated plume by removal of the plume and introduction of new target area for incidence with the laser beam. When the target is moved relative to the laser beam, rotational or translational movement may be imparted thereto, but rotation of the target is preferred.

  19. Laser ablation for the synthesis of carbon nanotubes

    DOEpatents

    Holloway, Brian C.; Eklund, Peter C.; Smith, Michael W.; Jordan, Kevin C.; Shinn, Michelle

    2010-04-06

    Single walled carbon nanotubes are produced in a novel apparatus by the laser-induced ablation of moving carbon target. The laser used is of high average power and ultra-fast pulsing. According to various preferred embodiments, the laser produces an output above about 50 watts/cm.sup.2 at a repetition rate above about 15 MHz and exhibits a pulse duration below about 10 picoseconds. The carbon, carbon/catalyst target and the laser beam are moved relative to one another and a focused flow of "side pumped", preheated inert gas is introduced near the point of ablation to minimize or eliminate interference by the ablated plume by removal of the plume and introduction of new target area for incidence with the laser beam. When the target is moved relative to the laser beam, rotational or translational movement may be imparted thereto, but rotation of the target is preferred.

  20. Laser ablation for the synthesis of carbon nanotubes

    DOEpatents

    Holloway, Brian C; Eklund, Peter C; Smith, Michael W; Jordan, Kevin C; Shinn, Michelle

    2012-11-27

    Single walled carbon nanotubes are produced in a novel apparatus by the laser-induced ablation of moving carbon target. The laser used is of high average power and ultra-fast pulsing. According to various preferred embodiments, the laser produces and output above about 50 watts/cm.sup.2 at a repetition rate above about 15 MHz and exhibits a pulse duration below about 10 picoseconds. The carbon, carbon/catalyst target and the laser beam are moved relative to one another and a focused flow of "side pumped", preheated inert gas is introduced near the point of ablation to minimize or eliminate interference by the ablated plume by removal of the plume and introduction of new target area for incidence with the laser beam. When the target is moved relative to the laser beam, rotational or translational movement may be imparted thereto, but rotation of the target is preferred.

  1. Measurement of surface stay times for physical adsorption of gases. Ph.D. Thesis - Va. Univ.; [using molecular beam time of flight technique

    NASA Technical Reports Server (NTRS)

    Wilmoth, R. G.

    1973-01-01

    A molecular beam time-of-flight technique is studied as a means of determining surface stay times for physical adsorption. The experimental approach consists of pulsing a molecular beam, allowing the pulse to strike an adsorbing surface and detecting the molecular pulse after it has subsequently desorbed. The technique is also found to be useful for general studies of adsorption under nonequilibrium conditions including the study of adsorbate-adsorbate interactions. The shape of the detected pulse is analyzed in detail for a first-order desorption process. For mean stay times, tau, less than the mean molecular transit times involved, the peak of the detected pulse is delayed by an amount approximately equal to tau. For tau much greater than these transit times, the detected pulse should decay as exp(-t/tau). However, for stay times of the order of the transit times, both the molecular speed distributions and the incident pulse duration time must be taken into account.

  2. A positron trap and beam apparatus for atomic and molecular scattering experiments.

    PubMed

    Sullivan, J P; Jones, A; Caradonna, P; Makochekanwa, C; Buckman, S J

    2008-11-01

    An instrument has been designed and constructed to provide new insights into fundamental, low energy positron scattering processes. The design is based on the Surko trap system and produces a pulsed positron beam with an energy resolution of as good as 54 meV. The design and operation of the apparatus is explained, while the first experimental results from this apparatus have been demonstrated in recent publications. PMID:19045887

  3. STUDY OF THE REACTION DYNAMICS OF Li + HF, HCl BY THE CROSSED MOLECULAR BEAMS METHOD

    SciTech Connect

    Becker, Christopher H.; Casavecchia, Piergiorgio; Tiedemann, Peter W.; Valentini, James J.; Lee, Yuan T.

    1980-05-01

    The reactions of (I) Li + HF {yields} LiF + H and (II) Li + HCl {yields} LiCl + H have been studied by the crossed molecular beams method. Angular distributions [N({theta})] of product molecules have been measured at 4 collision energies (E{sub c}) ranging from about 2 to 9 kcal/mole and time-of-flight (TOF) measurements of product velocity distribution were made at approximately E{sub c} = 3 and 9 kcal/mole for both reactions (I) and (II). The combined N({theta}) and TOF results were used to generate contour maps of lithium-halide product flux in angle and recoil velocity in the center-of-mass (c.m.) frame. For reaction (I) at E{sub c} = 3 kcal/mole the c.m. angular distribution [T({theta})] shows evidence of complex formation with near forward-backward symmetry; slightly favored backward peaking is observed. The shape of this T({theta}) indicates there is significant parallel or antiparallel spatial orientation of initial and final orbital angular momentum {rvec L} and {rvec L}', even though with H departing L' must be rather small and {rvec L} = {rvec J}', where {rvec J}' is the final rotational angular momentum vector. It is deduced that coplanar reaction geometries are strongly favored. At E{sub c} = 8.7 kcal/mole the T({theta}) of reaction (I) becomes strongly forward peaked. The product translational energy distributions P(E{sub T}') at both these collision energies give an average E{sub T}' of ~55% of the total available energy; this appears consistent with a theoretically calculated late exit barrier to reaction. The T({theta}) at E{sub c} = 2.9 and 9.2 kcal/mole for reaction (II) are forward-sideways peaked. Most of the available energy (~70%) goes into recoil velocity at both E{sub c} for LiCl formation. This suggests a late energy release for this 11 kcal/mole exoergic reaction. Both reactions (I) and (II) show evidence of no more than a minor partitioning of energy into product vibrational excitation. Integral reactive cross sections ({sigma}{sub R

  4. Molecular depth profiling of organic photovoltaic heterojunction layers by ToF-SIMS: comparative evaluation of three sputtering beams.

    PubMed

    Mouhib, T; Poleunis, C; Wehbe, N; Michels, J J; Galagan, Y; Houssiau, L; Bertrand, P; Delcorte, A

    2013-11-21

    With the recent developments in secondary ion mass spectrometry (SIMS), it is now possible to obtain molecular depth profiles and 3D molecular images of organic thin films, i.e. SIMS depth profiles where the molecular information of the mass spectrum is retained through the sputtering of the sample. Several approaches have been proposed for "damageless" profiling, including the sputtering with SF5(+) and C60(+) clusters, low energy Cs(+) ions and, more recently, large noble gas clusters (Ar500-5000(+)). In this article, we evaluate the merits of these different approaches for the in depth analysis of organic photovoltaic heterojunctions involving poly(3-hexylthiophene) (P3HT) as the electron donor and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) as the acceptor. It is demonstrated that the use of 30 keV C60(3+) and 500 eV Cs(+) (500 eV per atom) leads to strong artifacts for layers in which the fullerene derivative PCBM is involved, related to crosslinking and topography development. In comparison, the profiles obtained using 10 keV Ar1700(+) (∼6 eV per atom) do not indicate any sign of artifacts and reveal fine compositional details in the blends. However, increasing the energy of the Ar cluster beam beyond that value leads to irreversible damage and failure of the molecular depth profiling. The profile qualities, apparent interface widths and sputtering yields are analyzed in detail. On the grounds of these experiments and recent molecular dynamics simulations, the discussion addresses the issues of damage and crater formation induced by the sputtering and the analysis ions in such radiation-sensitive materials, and their effects on the profile quality and the depth resolution. Solutions are proposed to optimize the depth resolution using either large Ar clusters or low energy cesium projectiles for sputtering and/or analysis.

  5. Moldable cork ablation material

    NASA Technical Reports Server (NTRS)

    1977-01-01

    A successful thermal ablative material was manufactured. Moldable cork sheets were tested for density, tensile strength, tensile elongation, thermal conductivity, compression set, and specific heat. A moldable cork sheet, therefore, was established as a realistic product.

  6. High-efficiency broad-area single-quantum-well lasers with narrow single-lobed far-field patterns prepared by molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Larsson, A.; Muttelstein, M.; Arakawa, Y.; Yariv, A.

    1986-01-01

    Broad-area single-quantum-well graded-index waveguide separate-confinement heterostructure lasers were fabricated by molecular beam epitaxy. A high external quantum efficiency of 79 percent and stable, single-lobed far-field patterns with a beam divergence as narrow as 0.8 deg (1.9 times diffraction limit) for a 100 micron-wide laser were obtained under pulsed conditions.

  7. Micropillar fabrication on bovine cortical bone by direct-write femtosecond laser ablation

    NASA Astrophysics Data System (ADS)

    Lim, Yong C.; Altman, Katrina J.; Farson, Dave F.; Flores, Katharine M.

    2009-11-01

    We investigated fabrication of cylindrical micropillars on bovine cortical bone using direct-write femtosecond laser ablation. The ablation threshold of the material was measured by single-pulse ablation tests, and the incubation coefficient was measured from linear scanned ablation tests. A motion system was programmed to apply multiple layers of concentric rings of pulses to machine pillars of various diameters and heights. The diameter of the top surface of the pillar was found to steadily decrease due to incubation of damage from successive layers of pulses during the machining process. Pillar top diameter was predicted based on a paraxial beam fluence approximation and single-pulse ablation threshold and incubation coefficient measurements. Pillar diameters predicted as successive layers of pulses were applied were well-matched to experiments, confirming that femtosecond laser ablation of the cortical bone was well-modeled by single-pulse ablation threshold measurements and an incubation coefficient.

  8. A low thermal mass fast gas chromatograph and its implementation in fast gas chromatography mass spectrometry with supersonic molecular beams.

    PubMed

    Fialkov, Alexander B; Moragn, Mati; Amirav, Aviv

    2011-12-30

    A new type of low thermal mass (LTM) fast gas chromatograph (GC) was designed and operated in combination with gas chromatography mass spectrometry (GC-MS) with supersonic molecular beams (SMB), including GC-MS-MS with SMB, thereby providing a novel combination with unique capabilities. The LTM fast GC is based on a short capillary column inserted inside a stainless steel tube that is resistively heated. It is located and mounted outside the standard GC oven on its available top detector port, while the capillary column is connected as usual to the standard GC injector and supersonic molecular beam interface transfer line. This new type of fast GC-MS with SMB enables less than 1 min full range temperature programming and cooling down analysis cycle time. The operation of the fast GC-MS with SMB was explored and 1 min full analysis cycle time of a mixture of 16 hydrocarbons in the C(10)H(22) up to C(44)H(90) range was achieved. The use of 35 mL/min high column flow rate enabled the elution of C(44)H(90) in less than 45 s while the SMB interface enabled splitless acceptance of this high flow rate and the provision of dominant molecular ions. A novel compound 9-benzylazidanthracene was analyzed for its purity and a synthetic chemistry process was monitored for the optimization of the chemical reaction yield. Biodiesel was analyzed in jet fuel (by both GC-MS and GC-MS-MS) in under 1 min as 5 ppm fatty acid methyl esters. Authentic iprodion and cypermethrin pesticides were analyzed in grapes extract in both full scan mode and fast GC-MS-MS mode in under 1 min cycle time and explosive mixture including TATP, TNT and RDX was analyzed in under 1 min combined with exhibiting dominant molecular ion for TATP. Fast GC-MS with SMB is based on trading GC separation for speed of analysis while enhancing the separation power of the MS via the enhancement of the molecular ion in the electron ionization of cold molecules in the SMB. This paper further discusses several features of

  9. Influence of substrate misorientation on defect and impurity incorporation in GaAs/AlGaAs heterostructures grown by molecular-beam epitaxy

    NASA Technical Reports Server (NTRS)

    Radulescu, D. C.; Wicks, G. W.; Schaff, W. J.; Calawa, A. R.; Eastman, L. F.

    1988-01-01

    GaAS/AlGaAs heterostructures have been grown by molecular-beam epitaxy on GaAs substrates intentionally oriented (tilted) a few degrees (0-6.5) off the (001) plane towards either (111)A, (111)B, or (011). It was observed that the 4-K photoluminescence and low-field electron transport properties of these structures may be functions of the substrate tilt angle and tilt direction, depending on the concentration of impurities incorporated during growth. A substrate tilt during molecular-beam epitaxy is observed to have the largest effect on these properties when the background impurity concentration in the molecular-beam epitaxial machine is high. This supports the contention that the observed changes in material characteristics are due to differences in the incorporation of defects and impurities. The incorporation of defects and impurities are reduced by using substrates tilted toward (111)A, in comparison to nominally flat (001) substrates or substrates tilted toward (111)B.

  10. Laser Direct Ablation of Indium Tin Oxide Films on Both Sides of Various Substrates.

    PubMed

    Oh, Gi Taek; Kwon, Sang Jik; Han, Jae-Hee; Cho, Eou Sik

    2015-03-01

    We demonstrate ablation of indium tin oxide (ITO) films onto both glass and polyethylene terephthalate (PET) substrates, using a Q-switched diode-pumped neodymium-doped yttrium vanadate laser (Nd:YVO4, λ = 1064 nm) incident on both the front and back sides of the substrate. From scanning electron microscope (SEM) images and depth profile data, ITO patterns that were laser-ablated onto glass from the back side showed a larger abrupt change in the ablated line width than those ablated from the front. However, there were only slight differences in ablated line widths due to the direction of the incident laser beam. We provide a possible explanation in terms of several factors: dispersion of laser beam energy through the substrate, overlapping of each laser beam spot due to scanning speed, and the thickness of glass and PET substrates. PMID:26413678

  11. Application of Laser Ablation Processing in Electric Power System Industries

    NASA Astrophysics Data System (ADS)

    Konagai, Chikara; Sano, Yuji; Nittoh, Koichi; Kuwako, Akira

    The present status of laser ablation processing applied in electric power system industries is reviewed. High average power LD-pumped Nd:YAG lasers with Q-switch have been developed and currently introduced into various applications. Optical fiber based laser beam delivery systems for Q-switched pulse laser are also being developed these years. Based on such laser and beam delivery technology, laser ablation processes are gradually introduced in maintenance of nuclear power plant, thermal power plant and electrical power distribution system. Cost effectiveness, robustness and reliability of the process is highly required for wide utilization in these fields.

  12. On the deracemization of a chiral molecular beam by interaction with circularly polarized light

    NASA Astrophysics Data System (ADS)

    Kucirka, Jerry; Shekhtman, Alexander G.

    1996-02-01

    A strong electromagnetic field exerts a force on neutral atoms or molecules and this effect has been utilized in atomic beam optics to create the analogs to optical elements such as lenses and mirrors. We extend this concept to the specific interaction of a chiral molecule with a circularly polarized laser wave. Because of the optical activity of chiral molecules this interaction is selective with respect to handedness and this selectivity forms the basis for a “chiral mirror” scheme, here introduced, to produce chirally pure matter.

  13. Continuous all-optical deceleration and single-photon cooling of molecular beams

    NASA Astrophysics Data System (ADS)

    Jayich, A. M.; Vutha, A. C.; Hummon, M. T.; Porto, J. V.; Campbell, W. C.

    2014-02-01

    Ultracold molecular gases are promising as an avenue to rich many-body physics, quantum chemistry, quantum information, and precision measurements. This richness, which flows from the complex internal structure of molecules, makes the creation of ultracold molecular gases using traditional methods (laser plus evaporative cooling) a challenge, in particular due to the spontaneous decay of molecules into dark states. We propose a way to circumvent this key bottleneck using an all-optical method for decelerating molecules using stimulated absorption and emission with a single ultrafast laser. We further describe single-photon cooling of the decelerating molecules that exploits their high dark state pumping rates, turning the principal obstacle to molecular laser cooling into an advantage. Cooling and deceleration may be applied simultaneously and continuously to load molecules into a trap. We discuss implementation details including multilevel numerical simulations of strontium monohydride. These techniques are applicable to a large number of molecular species and atoms with the only requirement being an electric dipole transition that can be accessed with an ultrafast laser.

  14. Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Benyahia, D.; Kubiszyn, Ł.; Michalczewski, K.; KĘbŁOwski, , A.; Martyniuk, P.; Piotrowski, J.; Rogalski, A.

    2016-01-01

    Non-intentionally doped GaSb epilayers were grown by molecular beam epitaxy (MBE) on highly mismatched semi-insulating GaAs substrate (001) with 2 offcut towards [110]. The effects of substrate temperature and the Sb/Gaflux ratio on the crystalline quality, surface morphology and electrical properties were investigated by Nomarski optical microscopy, X-ray diffraction (XRD) and Hall measurements, respectively. Besides, differential Hall was used to investigate the hole concentration behaviour along the GaSb epilayer. It is found that the crystal quality, electrical properties and surface morphology are markedly dependent on the growth temperature and the group V/III flux ratio. Under the optimized parameters, we demonstrate a low hole concentration at very low growth temperature. Unfortunately, the layers grown at low temperature are characterized by wide FWHM and low Hall mobility.

  15. Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Benyahia, D.; Kubiszyn, Ł.; Michalczewski, K.; Kębłowski, A.; Martyniuk, P.; Piotrowski, J.; Rogalski, A.

    2016-01-01

    Non-intentionally doped GaSb epilayers were grown by molecular beam epitaxy (MBE) on highly mismatched semi-insulating GaAs substrate (001) with 2 offcut towards [110]. The effects of substrate temperature and the Sb/Ga flux ratio on the crystalline quality, surface morphology and electrical properties were investigated by Nomarski optical microscopy, X-ray diffraction (XRD) and Hall measurements, respectively. Besides, differential Hall was used to investigate the hole concentration behaviour along the GaSb epilayer. It is found that the crystal quality, electrical properties and surface morphology are markedly dependent on the growth temperature and the group V/III flux ratio. Under the optimized parameters, we demonstrate a low hole concentration at very low growth temperature. Unfortunately, the layers grown at low temperature are characterized by wide FWHM and low Hall mobility.

  16. Molecular beam epitaxy-grown wurtzite MgS thin films for solar-blind ultra-violet detection

    SciTech Connect

    Lai, Y. H.; He, Q. L.; Cheung, W. Y.; Lok, S. K.; Wong, K. S.; Sou, I. K.; Ho, S. K.; Tam, K. W.

    2013-04-29

    Molecular beam epitaxy grown MgS on GaAs(111)B substrate was resulted in wurtzite phase, as demonstrated by detailed structural characterizations. Phenomenological arguments were used to account for why wurtzite phase is preferred over zincblende phase or its most stable rocksalt phase. Results of photoresponse and reflectance measurements performed on wurtzite MgS photodiodes suggest a direct bandgap at around 5.1 eV. Their response peaks at 245 nm with quantum efficiency of 9.9% and enjoys rejection of more than three orders at 320 nm and close to five orders at longer wavelengths, proving the photodiodes highly competitive in solar-blind ultraviolet detection.

  17. Comparison of Island Formation Between Pulsed Laser Deposition and Molecular Beam Epitaxy:. a Kinetic Monte Carlo Simulation

    NASA Astrophysics Data System (ADS)

    Tan, X.; Zhou, Y. C.; Zheng, X. J.

    Based on a hexagonal lattice which includes deposition, dissociation, and diffusion, we performed a kinetic Monte Carlo model to explore thin film growth via pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) within the submonolayer regime. First and second nearest-neighbor interactions calculated by the Morse potential are taken into account in this case. These simulations show that thin film deposition by PLD is markedly different from that by MBE. With PLD, as pulse duration decreases, the island density increases and the island size decreases. Similarly, at temperature T = 550 K, the scaling function for MBE is rather similar to that of the analytical prediction for a critical island size of i = 2, while the scaling function for PLD changes from an i = 1 behavior to an i = 0 behavior with the decrease in pulse duration.

  18. Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy.

    PubMed

    Roy, Anupam; Movva, Hema C P; Satpati, Biswarup; Kim, Kyounghwan; Dey, Rik; Rai, Amritesh; Pramanik, Tanmoy; Guchhait, Samaresh; Tutuc, Emanuel; Banerjee, Sanjay K

    2016-03-23

    We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In situ structural and chemical analyses reveal stoichiometric layered film growth with atomically smooth surface morphologies. Film growth along the (001) direction is confirmed by X-ray diffraction, and the crystalline nature of growth in the 2H phase is evident from Raman spectroscopy. Transmission electron microscopy is used to confirm the layered film structure and hexagonal arrangement of surface atoms. Temperature-dependent electrical measurements show an insulating behavior that agrees well with a two-dimensional variable-range hopping model, suggesting that transport in these films is dominated by localized charge-carrier states. PMID:26939890

  19. Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy.

    PubMed

    Roy, Anupam; Movva, Hema C P; Satpati, Biswarup; Kim, Kyounghwan; Dey, Rik; Rai, Amritesh; Pramanik, Tanmoy; Guchhait, Samaresh; Tutuc, Emanuel; Banerjee, Sanjay K

    2016-03-23

    We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In situ structural and chemical analyses reveal stoichiometric layered film growth with atomically smooth surface morphologies. Film growth along the (001) direction is confirmed by X-ray diffraction, and the crystalline nature of growth in the 2H phase is evident from Raman spectroscopy. Transmission electron microscopy is used to confirm the layered film structure and hexagonal arrangement of surface atoms. Temperature-dependent electrical measurements show an insulating behavior that agrees well with a two-dimensional variable-range hopping model, suggesting that transport in these films is dominated by localized charge-carrier states.

  20. Perpendicular Magnetic Anisotropy and Spin Glass-like Behavior in Molecular Beam Epitaxy Grown Chromium Telluride Thin Films.

    PubMed

    Roy, Anupam; Guchhait, Samaresh; Dey, Rik; Pramanik, Tanmoy; Hsieh, Cheng-Chih; Rai, Amritesh; Banerjee, Sanjay K

    2015-04-28

    Reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry, and other physical property measurements are used to investigate the structure, morphology, magnetic, and magnetotransport properties of (001)-oriented Cr2Te3 thin films grown on Al2O3(0001) and Si(111)-(7×7) surfaces by molecular beam epitaxy. Streaky RHEED patterns indicate flat smooth film growth on both substrates. STM studies show the hexagonal arrangements of surface atoms. Determination of the lattice parameter from the atomically resolved STM image is consistent with the bulk crystal structures. Magnetic measurements show the film is ferromagnetic, having a Curie temperature of about 180 K, and a spin glass-like behavior was observed below 35 K. Magnetotransport measurements show the metallic nature of the film with a perpendicular magnetic anisotropy along the c-axis.