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Sample records for absorption photoluminescence pl

  1. Metallic-like photoluminescence and absorption in fused silica surface flaws

    SciTech Connect

    Laurence, T A; Bude, J D; Shen, N; Feldman, T; Miller, P; Steele, W A; Suratwala, T

    2008-09-11

    Using high-sensitivity confocal time-resolved photoluminescence (PL) techniques, we report an ultra-fast PL (40ps-5ns) from impurity-free surface flaws on fused silica, including polished, indented or fractured surfaces of fused silica, and from laser-heated evaporation pits. This PL is excited by the single photon absorption of sub-band gap light, and is especially bright in fractures. Regions which exhibit this PL are strongly absorptive well below the band gap, as evidenced by a propensity to damage with 3.5eV ns-scale laser pulses.

  2. OPTICAL ABSORPTION AND PHOTOLUMINESCENCE IN PRISTINE AND PHOTOPOLYMERIZED C60 SOLID FILMS

    EPA Science Inventory

    The optical absorption (OA) and photoluminescence (PL) spectra of pristine, oxygen-free C60 films in the vicinity of the absorption edge across the highest-occupied-molecular-orbital to lowest-unoccupied-molecular-orbital (HOMO-LUMO) gap are studied to elucidate the nature of the...

  3. [The photoluminescence and absorption properties of Co/AAO nano-array composites].

    PubMed

    Li, Shou-Yi; Wang, Cheng-Wei; Li, Yan; Wang, Jian; Ma, Bao-Hong

    2008-03-01

    Ordered Co/AAO nano-array structures were fabricated by alternating current (AC) electrodeposition method within the cylindrical pores of anodic aluminum oxide (AAO) template prepared in oxalic acid electrolyte. The photoluminescence (PL) emission and photoabsorption of AAO templates and Co/AAO nano-array structures were investigated respectively. The results show that a marked photoluminescence band of AAO membranes occurs in the wavelength range of 350-550 nm and their PL peak position is at 395 nm. And with the increase in the deposition amount of Co nanoparticles, the PL intensity of Co/AAO nano-array structures decreases gradually, and their peak positions of the PL are invariable (395 nm). Meanwhile the absorption edges of Co/AAO show a larger redshift, and the largest shift from the near ultraviolet to the infrared exceeds 380 nm. The above phenomena caused by Co nano-particles in Co/AAO composite were analyzed. PMID:18536402

  4. Light-induced changes in subband absorption in a-Si:H using photoluminescence absorption spectroscopy

    NASA Astrophysics Data System (ADS)

    Gu, S. Q.; Taylor, P. C.; Nitta, S.

    1991-08-01

    We have used the photoluminescence (PL) generated in a thin-film sample of a-Si:H to probe low absorption levels by measuring the absorption of the PL as it travels down the length of the film in a waveguide mode. This technique, which we have called PL absorption spectroscopy of PLAS, allows the measurement of values of the absorption coefficient α down to about 0.1 cm-1. Because this technique probes the top and bottom surfaces of the a-Si:H sample, it is important to separate surface from bulk absorption mechanisms. An improved sample geometry has been employed to facilitate this separation. One sample consisted of an a-Si1-xNix:H/a-Si:H/ a-Si1-xNx:H/NiCr layered structure where the silicon nitride layers served as the cladding layers for the waveguide. In a second sample the a-Si:H layer was interrupted near the middle for two separate, thin (100 Å) layers of a-Si1-xNx:H in order to check for the importance of the absorption at the silicon/silicon nitride interfaces in these PLAS measurements. Changes in the below-gap absorption on light soaking were examined using irradiation from an Ar+ laser (5145 Å, ˜200 mW/cm2 for 5.5 hours at 300 K). The silicon/silicon nitride interface is responsible for an absorption which has a shoulder near 1.2 eV while the bulk a-Si:H absorption exhibits no such shoulder. The metastable, optically-induced increase in the below gap absorption appears to come entirely from the bulk of the a-Si:H. These low temperature PLAS measurements are compared with those obtained at 300 K by photothermal deflection spectroscopy.

  5. Coherent absorption and enhanced photoluminescence in thin layers of nanorods

    NASA Astrophysics Data System (ADS)

    Pirruccio, G.; Lozano, G.; Zhang, Y.; Rodriguez, S. R. K.; Gomes, R.; Hens, Z.; Rivas, Jaime Gómez

    2012-04-01

    We demonstrate a large light absorptance (80%) in a nanometric layer of quantum dots in rods (QRs) with a thickness of 23 nm. This behavior is explained in terms of the coherent absorption by interference of the light incident at a certain angle onto the very thin QR layer. We exploit this coherent light absorption to enhance the photoluminescent emission from the QRs. Up to a seven- and fivefold enhancement of the photoluminescence is observed for p- and s-polarized incident light, respectively.

  6. Silica nanoparticles functionalized with polyamidoamine (PAMAM) dendrimers as platforms for photoluminescence (PL) sensing of copper and cyanide ions.

    PubMed

    Gerrans, Kateryna; Luhrs, Alicia; Feider, Clara; Margerum, Lawrence D

    2016-05-15

    Functionalized nanoparticles for photoluminescence (PL) applications are a promising technology for biomedical imaging and as sensors for small molecules. This work presents a new method to modify silica nanoparticles (SNP) using the bifunctional linker 1,1'-carbonyldiimidazole (CDI) with a series of polyamidoamine (PAMAM) dendrimer molecules followed by grafting of fluorescein isothiocyanate (FITC) or rhodamine B isothiocyanate (RITC) to create platforms for photoluminescence (PL) sensors. A dendrimer size and charge-variable response to only copper(II) ions confirmed the prediction of a selective turn-off sensor via proximity quenching. Both dye density and Cu(2+) quenching efficiency peaked with SNP-dendrimer generation 4 (64 terminal amines). In addition, changing the terminal dendrimer arms to carboxylic acid end groups increased the copper quenching suggesting that more metal ion binding sites were created in close proximity to the dyes. Of the small anions tested for a turn-off sensor, only cyanide ion fully restored the PL when reaching a 2:1 CN(-):Cu(2+) ratio, while EDTA was not as effective at the same ratio. Therefore, dendrimer size and surface charge on the nanoparticles controlled the dye loading and copper quenching efficiency, while creating multiple binding sites for cyanide over other metal binding anions. PMID:26962978

  7. Asymmetry between absorption and photoluminescence line shapes of TPD: spectroscopic fingerprint of the twisted biphenyl core.

    PubMed

    Scholz, Reinhard; Gisslén, Linus; Himcinschi, Cameliu; Vragović, Igor; Calzado, Eva M; Louis, Enrique; San Fabián Maroto, Emilio; Díaz-García, María A

    2009-01-01

    We analyze absorption, photoluminescence (PL), and resonant Raman spectra of N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), with the aim of providing a microscopic interpretation of a significant Stokes shift of about 0.5 eV that makes this material suitable for stimulated emission. The optical spectra were measured for TPD dissolved in toluene and chloroform, as well as for polystyrene films doped with varying amounts of TPD. In addition, we measured preresonant and resonant Raman spectra, giving direct access to the vibrational modes elongated in the relaxed excited geometry of the molecule. The experimental data are interpreted with calculations of the molecular geometry in the electronic ground state and the optically excited state using density functional theory. Several strongly elongated high-frequency modes within the carbon rings results in a vibronic progression with a calculated spacing of 158 meV, corroborated by the observation of vibrational sidebands in the PL spectra. The peculiarities of the potential energy surfaces related to a twisting around the central bond in the biphenyl core of TPD allow to quantify the asymmetry between the line shapes observed in absorption and emission. PMID:19086796

  8. Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence

    SciTech Connect

    Katahara, John K.; Hillhouse, Hugh W.

    2014-11-07

    A unified model for the direct gap absorption coefficient (band-edge and sub-bandgap) is developed that encompasses the functional forms of the Urbach, Thomas-Fermi, screened Thomas-Fermi, and Franz-Keldysh models of sub-bandgap absorption as specific cases. We combine this model of absorption with an occupation-corrected non-equilibrium Planck law for the spontaneous emission of photons to yield a model of photoluminescence (PL) with broad applicability to band-band photoluminescence from intrinsic, heavily doped, and strongly compensated semiconductors. The utility of the model is that it is amenable to full-spectrum fitting of absolute intensity PL data and yields: (1) the quasi-Fermi level splitting, (2) the local lattice temperature, (3) the direct bandgap, (4) the functional form of the sub-bandgap absorption, and (5) the energy broadening parameter (Urbach energy, magnitude of potential fluctuations, etc.). The accuracy of the model is demonstrated by fitting the room temperature PL spectrum of GaAs. It is then applied to Cu(In,Ga)(S,Se){sub 2} (CIGSSe) and Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) to reveal the nature of their tail states. For GaAs, the model fit is excellent, and fitted parameters match literature values for the bandgap (1.42 eV), functional form of the sub-bandgap states (purely Urbach in nature), and energy broadening parameter (Urbach energy of 9.4 meV). For CIGSSe and CZTSSe, the model fits yield quasi-Fermi leveling splittings that match well with the open circuit voltages measured on devices made from the same materials and bandgaps that match well with those extracted from EQE measurements on the devices. The power of the exponential decay of the absorption coefficient into the bandgap is found to be in the range of 1.2 to 1.6, suggesting that tunneling in the presence of local electrostatic potential fluctuations is a dominant factor contributing to the sub-bandgap absorption by either purely electrostatic (screened Thomas-Fermi) or

  9. Photomagnetism and photoluminescence (PL) of (Pb-Fe-e -) complex in lead magnesium niobate-lead titanate (PMN-PT) crystals containing β-PbO nanoclusters

    NASA Astrophysics Data System (ADS)

    Bairavarasu, Sundar R.; Edwards, Matthew E.; Sastry, Medury D.; Kochary, Faris; Kommidi, Praveena; Reddy, B. Rami; Lianos, Dimitrios; Aggarwal, Manmohan D.

    2008-12-01

    We present electron paramagnetic resonance (EPR)—evidence of photomagnetism under the conditions of in situ green laser illumination (photo-EPR) in lead magnesium niobate-lead titanate, Pb(Mg,Nb)O 3-PbTiO 3 (PMN-PT), containing nanoparticles/wires of orthorhombic β-PbO as identified by Raman spectroscopy. Photo-EPR studies of the sample containing β-PbO, brownish red in color, have shown intense line at g = 2.00, and its yield increased when produced in the presence of 7.5 kG external magnetic field suggesting the formation of magnetic polaron. This was identified as due to interaction between Fe 3+, photoinduced Pb 3+ and unpaired electron trapped at oxygen vacancies. The photoinduced growth and decay of magnetic polaron has shown a non-exponential behavior. Photoluminescence (PL) studies were conducted with excitation at 308 nm (XeCl laser) and also at 454.5, 488 and 514.5 nm using Ar + laser. The excitation with 308 nm gave broad PL centered at 500 and 710 nm the latter being quite prominent in β-PbO containing crystals, along with cooperative luminescence at 350 nm involving two emitting centers. The excitation with Ar + laser lines, close to the electronic absorption in samples containing β-PbO gave richer and sharp PL emission in red region from the constituents of the magnetic polaron and also intense anti-Stokes emission on excitation with 514.5 nm radiation. This appears to be due to phototransfer optically stimulated luminescence (PT-OSL) involving electron-hole recombination at photoinduced magnetic polaron site.

  10. Temperature-dependent excitonic photoluminescence excited by two-photon absorption in perovskite CsPbBr_3 quantum dots

    NASA Astrophysics Data System (ADS)

    Wei, Ke; Xu, Zhongjie; Chen, Runze; Zheng, Xin; Cheng, Xiangai; Jiang, Tian

    2016-08-01

    Recently lead halide nanocrystals (quantum dots) have been reported with potential for photovoltaic and optoelectronic applications due to their excellent luminescent properties. Herein excitonic photoluminescence (PL) excited by two-photon absorption in perovskite CsPbBr3 quantum dots (QDs) have been studied across a broad temperature range from 80K to 380K. Two-photon absorption has been investigated with absorption coefficient up to 0.085 cm/GW at room temperature. Moreover, the photoluminescence excited by two-photon absorption shows a linear blue-shift (0.25meV/K) below temperature of ~220K and turned steady with fluctuation below 1nm (4.4meV) for higher temperature up to 380K. These phenomena are distinctly different from general red-shift of semiconductor and can be explained by the competition between lattice expansion and electron-phonon couplling.Our results reveal the strong nonlinear absorption and temperature-independent chromaticity in a large temperature range from 220K to 380K in the CsPbX3 QDs, which will offer new opportunities in nonlinear photonics, light-harvesting and light-emitting devices.

  11. Temperature-dependent excitonic photoluminescence excited by two-photon absorption in perovskite CsPbBr3 quantum dots.

    PubMed

    Wei, Ke; Xu, Zhongjie; Chen, Runze; Zheng, Xin; Cheng, Xiangai; Jiang, Tian

    2016-08-15

    Recently, lead halide perovskite quantum dots have been reported with potential for photovoltaic and optoelectronic applications due to their excellent luminescent properties. Herein excitonic photoluminescence (PL) excited by two-photon absorption in perovskite CsPbBr3 quantum dots (QDs) has been studied at a broad temperature range, from 80 to 380 K. Two-photon absorption has been investigated and the absorption coefficient is up to 0.085 cm/GW at room temperature. Moreover, the PL spectrum excited by two-photon absorption shows a linear blue-shift (0.32 meV/K) below the temperature of 220 K. However, for higher temperatures, the PL peak approaches a roughly constant value and shows temperature-independent chromaticity up to 380 K. This behavior is distinct from the general red-shift for semiconductors and can be attributed to the result of thermal expansion, electron-phonon interaction and structural phase transition around 360 K. The strong nonlinear absorption and temperature-independent chromaticity of CsPbBr3 QDs observed in temperature range from 220 to 380 K will offer new opportunities in nonlinear photonics, light-harvesting, and light-emitting devices. PMID:27519098

  12. Self-absorption correction for solid-state photoluminescence quantum yields obtained from integrating sphere measurements.

    PubMed

    Ahn, Tai-Sang; Al-Kaysi, Rabih O; Müller, Astrid M; Wentz, Katherine M; Bardeen, Christopher J

    2007-08-01

    A new method is presented for analyzing the effects of self-absorption on photoluminescence integrating sphere quantum yield measurements. Both the observed quantum yield and luminescence spectrum are used to determine the self-absorption probability, taking into account both the initial emission and subsequent absorption and reemission processes. The analysis is experimentally validated using the model system of the laser dye perylene red dispersed in a polymer film. This approach represents an improvement over previous methods that tend to overestimate the true quantum yield, especially in cases with high sample absorbance or quantum yield values. PMID:17764365

  13. Thermal annealing and UV irradiation effects on structure, morphology, photoluminescence and optical absorption spectra of EDTA-capped ZnS nanoparticles

    NASA Astrophysics Data System (ADS)

    Osman, M. A.; Othman, A. A.; El-Said, Waleed A.; Abd-Elrahim, A. G.; Abu-sehly, A. A.

    2016-02-01

    Monodispersed ZnS nanoparticles (NPs) were prepared by the chemical precipitation method. Thermally induced structural, morphological and optical changes have been investigated using x-ray diffraction, high-resolution transmission electron microscopy, optical absorption, photoluminescence (PL), and Fourier transform infrared and Raman spectroscopy. It was found that D increases with increasing annealing temperature (T a). The onset of the ZnS phase transition from cubic to hexagonal structure takes place at 400 °C, while cubic ZnS transforms into hexagonal ZnO via thermal oxidation in air at 600 °C. It is also noted that increasing T a results in the red shift of the optical band gap (E\\text{g}\\text{opt} ) and the thermal bleaching of exciton absorption. The PL spectrum of as-prepared ZnS nanopowder shows UV emission bands at 363 and 395 nm and blue and green emission at 438 and 515 nm, respectively. With increasing T a up to 500 °C, these bands were quenched and red-shifted. In addition, the UV irradiation effects on colloidal ZnS NPs were investigated. UV irradiation at a dose  <13 J cm-2 leads to a decrease in D, the blue shift of E\\text{g}\\text{opt} and the enhancement of PL intensity. This behavior was explained in terms of surface modification by photopolymerization, the formation of a ZnSO4 passivation layer, as well as the reduction of D by photocorrosion. At a UV irradiation dose  <13 J cm-2 both E\\text{g}\\text{opt} and D did not change and PL intensity was quenched, which were caused by the creation of nonradiative surface states by the photodegradation of the capping agent and photopassivated layer. The mechanism of the PL emission process in ZnS NPs was discussed and an energy band diagram was proposed.

  14. Influence of thermally induced structural and morphological changes, and UV irradiation on photoluminescence and optical absorption behavior of CdS nanoparticles

    NASA Astrophysics Data System (ADS)

    Osman, M. A.; El-Said, Waleed A.; Othman, A. A.; Abd-Elrahim, A. G.

    2016-04-01

    Polycrystalline cubic CdS nanoparticles (NPs) with a crystallite size ({{D}\\text{Sch}} ) ~3 nm were synthesized by chemical precipitation method at room temperature. Thermal induced structural and morphological changes have been investigated using x-ray diffraction, high-resolution transmission electron microscope, x-ray fluorescence, Fourier transform infrared and Raman spectroscopy. The influence of these changes on optical absorption and photoluminescence (PL) characteristics have been studied. It was found that increasing annealing temperature (T a), results in structural phase transitions at 300 and 700 °C, increasing {{D}\\text{Sch}} and red shift of the optical band gap (E\\text{g}\\text{opt} ) due to the improvement in crystallinity. The photoluminescence emission spectrum of nonstoichiometric CdS (Cd-rich) nanopowder reveals emission bands at 365, 397, and 434 nm. Furthermore, PL spectrum of colloidal solution exhibits additional green and red emission bands at 535, 570 and 622 nm. To explain the mechanism of PL emission in CdS NPs, trapping and radiative recombination levels have been identified and the corresponding energy band diagrams are suggested. Annealing process results in an overall enhancement in PL intensity due to the improvement in crystallinity associated with the reduction of nonradiative surface state defects. Irradiation of CdS NPs colloidal solution at UV irradiation dose  <13 J cm-2 leads to the enhancement of PL quantum efficiency and blue shift of E\\text{g}\\text{opt} (i.e. photo-brightening) due to the decrease in the particle size deduced from Brus equation ≤ft({{D}\\text{Brus}}\\right) , This behavior is due to UV irradiation effects such as photopolymerization, the formation of CdSO4 passivation layers due to photooxidation and the reduction in {{D}\\text{Brus}} by photocorrosion process. At UV irradiation dose  <13 J cm-2, PL emission intensity continuously enhances without any change in both E

  15. Polarization-selective three-photon absorption and subsequent photoluminescence in CsPbBr3 single crystal at room temperature

    NASA Astrophysics Data System (ADS)

    Clark, D. J.; Stoumpos, C. C.; Saouma, F. O.; Kanatzidis, M. G.; Jang, J. I.

    2016-05-01

    We report on highly polarization-selective three-photon absorption (3PA) in a Bridgman-grown single crystal of CsPbBr3 oriented along the (112) direction, which is an inorganic counterpart to emerging organic-inorganic hybrid halide perovskites for solar-cell and optoelectronic applications. The crystal exhibits strong photoluminescence (PL) at room temperature as a direct consequence of 3PA of fundamental radiation. Interestingly, 3PA disappears when the input polarization is parallel to the (-110 ) direction. This 3PA effect is strongest when orthogonal to (-110 ) and the corresponding 3PA coefficient was measured to be γ =0.14 ±0.03 cm3/GW2 under picosecond-pulse excitation at the fundamental wavelength of λ =1200 nm. The laser-induced damage threshold was also determined to be about 20 GW/cm2 at the same wavelength. Based on relative PL intensities upon λ tuning over the entire 3PA range (1100 -1700 nm), we determined the nonlinear optical dispersion of the 3PA coefficient for CsPbBr3, which is consistent with a theoretical prediction. Experimentally observed significant polarization dependence of γ was explained by relevant selection rules. The perovskite is potentially important for nonlinear optical applications owing to its highly efficient 3PA-induced PL response with a sharp on/off ratio by active polarization control.

  16. Cross-polarized optical absorption of single-walled carbon nanotubes probed by photoluminescence excitation spectroscopy, UV-Vis-IR and polarized Raman Scatterings

    NASA Astrophysics Data System (ADS)

    Maruyama, Shigeo

    2008-03-01

    Because of the depolarization effect, or so-called antenna effect, optical absorption of single-walled carbon nanotubes (SWNTs) is weak when excited by light polarized perpendicular to the nanotube axis. However, in photoluminescence (PL) excitation spectra of isolated SWNTs, PL peaks due to cross-polarized excitation can be clearly identified. By decomposing the cross-polarized component, the optical transition energy of E12 or E21 can be? measured, and the smaller exciton binding energy for perpendicular excitations is concluded [1]. Cross-polarized absorption is dominant in the absorption of a vertically aligned film of SWNTs [2] when excited from the top of the film. In our previous study, a pi-plasmon absorption at 5.25 eV was revealed in contrast to 4.5 eV for parallel excitation [3]. Resonant Raman scattering from such a film is also influenced by the cross-polarized excitation [4]. Even though a Kataura plot for the E33 and E44 range has been proposed by using such a vertically aligned film [5], polarized Raman scattering spectra reveal more complicated features in the system because of the small bundle size, typically 5-8 nanotubes [6]. References: [1] Y. Miyauchi, M. Oba, S. Maruyama, Phys. Rev. B 74 (2006) 205440. [2] Y. Murakami, S. Chiashi, Y. Miyauchi, M. Hu, M. Ogura, T. Okubo, S. Maruyama, Chem. Phys. Lett. 385 (2004) 298. [3] Y. Murakami, E. Einarsson, T. Edamura, S. Maruyama, Phys. Rev. Lett. 94 (2005) 087402. [4] Y. Murakami, S. Chiashi, E. Einarsson, S. Maruyama, Phys. Rev. B 71 (2005) 085403. [5] P. T. Araujo, S. K. Doorn, S. Kilina, S. Tretiak, E. Einarsson, S. Maruyama, H. Chacham, M. A. Pimenta, A. Jorio, Phys. Rev. Lett. 88 (2007) 067401. [6] E. Einarsson, H. Shiozawa, C. Kramberger, M. H. Ruemmeli, A. Gruneis, T. Pichler, S. Maruyama, J. Phys. Chem. C (2007) published on Web.

  17. IRRS, UV-Vis-NIR absorption and photoluminescence upconversion in Ho 3+-doped oxyfluorophosphate glasses

    NASA Astrophysics Data System (ADS)

    Karmakar, Basudeb

    2005-09-01

    Infrared reflection spectroscopic (IRRS), ultraviolet-visible-near infrared (UV-Vis-NIR) absorption and photoluminescence upconversion properties with special emphasis on the spectrochemistry of the oxyfluorophosphate (oxide incorporated fluorophosphates) glasses of the Ba(PO 3) 2-AlF 3-CaF 2-SrF 2-MgF 2-Ho 2O 3 system have been studied with different concentrations (0.1, 0.3 and 1.0 mol%) of Ho 2O 3. IRRS spectral band position and intensity of Ho 3+ ion doped oxyfluorophosphate glasses have been discussed in terms of reduced mass and force constant. UV-Vis-NIR absorption band position has been justified with quantitative calculation of nephelauxetic parameter and covalent bonding characteristics of the host. NIR to visible upconversion has been investigated by exciting at 892 nm at room temperature. Three upconverted bands originated from the 5F 3→ 5I 8, ( 5S 2, 5F 4)→ 5I 8 and 5F 5→ 5I 8 transitions have found to be centered at 491 nm (blue, medium), 543 nm (green, very strong) and 658 nm (red, weak), respectively. These bands have been justified from the evaluation of the absorption, normal (down conversion) fluorescence and excitation spectra. The upconversion processes have been explained by the excited state absorption (ESA), energy transfer (ET) and cross relaxation (CR) mechanisms involving population of the metastable (storage) energy levels by multiphonon deexcitation effect. It is evident from the IRRS study that the upconversion phenomena are expedited by the low multiphonon relaxation rate in oxyfluorophosphate glasses owing to their high intense low phonon energy (˜600 cm -1) which is very close to that of fluoride glasses (500-600 cm -1).

  18. Ultra-fast photoluminescence as a diagnostic for laser damage initiation

    SciTech Connect

    Laurence, T A; Bude, J D; Shen, N; Miller, P E; Steele, W A; Guss, G; Adams, J J; Wong, L L; Feit, M D; Suratwala, T I

    2009-10-30

    Using high-sensitivity confocal time-resolved photoluminescence (CTP) techniques, we report an ultra-fast photoluminescence (40ps-5ns) from impurity-free surface flaws on fused silica, including polished, indented or fractured surfaces of fused silica, and from laser-heated evaporation pits. This fast photoluminescence (PL) is not associated with slower point defect PL in silica which has characteristic decay times longer than 5ns. Fast PL is excited by the single photon absorption of sub-band gap light, and is especially bright in fractures. Regions which exhibit fast PL are strongly absorptive well below the band gap, as evidenced by a propensity to damage with 3.5eV ns-scale laser pulses, making CTP a powerful non-destructive diagnostic for laser damage in silica. The use of CTP to provide insights into the nature of damage precursors and to help develop and evaluate new damage mitigation strategies will be presented.

  19. The high temperature photoluminescence and optical absorption of undoped ZnO single crystals and thin films

    SciTech Connect

    Margueron, Samuel; Clarke, David R.

    2014-11-21

    The photoluminescence of undoped ZnO single crystals up to 1350 °C and the optical absorption of stress-relaxed, epitaxial ZnO thin films up to 1100 °C are reported. The photoluminescence intensity and power dependence with illumination flux are related to the crystal growth methods and stabilize after high temperature annealing. The observation of excitonic recombination at very high temperatures requires high illumination flux. It is found that the zero phonon line model reproduces the shift and the band gap narrowing as well as the free excitonic transition up to the cross-over with a defect level at 2.83 eV that occurs at 800 °C. A phenomenological model of the excitonic recombination band shape, taking account exciton-phonon losses and defect levels provides an excellent fit up to 2.2–2.4 eV (1100 °C). At these cross-over temperatures, an energy transfer is observed between the free exciton transition and defect transitions. However, at temperature above 1100 °C, the decrease of the band gap and the increase of thermal radiation, as well as the restrictions of our experimental set-up and particularly the illumination flux of the exciting laser, limit the analysis of the photoluminescence spectra measurements.

  20. Label-free assay for the detection of glucose mediated by the effects of narrowband absorption on quantum dot photoluminescence

    NASA Astrophysics Data System (ADS)

    Khan, Saara A.; Smith, Gennifer T.; Ellerbee, Audrey K.

    2014-03-01

    We present a novel strategy for label-free detection of glucose based on CdSe/ZnS core/shell quantum dots (QDs). We exploit the concentration-dependent, narrowband absorption of the hexokinase-glucose 6-phosphate dehydrogenase enzymatic assay to selectively filter a 365-nm excitation source, leading to a proportional decrease in the photoluminescence intensity of the QDs. The visible wavelength emission of the QDs enables quantitative readout using standard visible detectors (e.g., CCD). Experimental results show highly linear QD photoluminescence over the clinically relevant glucose concentration range of 1-25mM, in excellent agreement with detection methods demonstrated by others. The method has a demonstrated limit of detection of 3.5μM, also on par with the best proposed methods. A significant advantage of our strategy is the complete elimination of QDs as a consumable. In contrast with other methods of QD-based measurement of glucose, our system does not require the glucose solution to be mixed with the QDs, thereby decreasing its overall cost and making it an ideal strategy for point-of-care detection of glucose in low-resource areas. Furthermore, readout can be accomplished with low-cost, portable detectors such as cellular phones, eliminating the need for expensive and bulky spectrophotometers to output quantitative information. The general strategy we present is useful for other biosensing applications involving chemistries with unique absorption peaks falling within the excitation band of available QDs.

  1. Synthesis of dithienosilole-based highly photoluminescent donor-acceptor type compounds.

    PubMed

    Ohshita, Joji; Tominaga, Yuta; Tanaka, Daiki; Ooyama, Yousuke; Mizumo, Tomonobu; Kobayashi, Norifumi; Higashimura, Hideyuki

    2013-03-14

    Highly photoluminescent acceptor-donor-acceptor (A-D-A) and donor-acceptor (D-A) type compounds with a dithienosilole unit as the donor and perfluorotolyl or dimesitylboryl group(s) as the acceptor were prepared by the reaction of lithiated dithienosilole derivatives with perfluorotoluene or fluorodimesitylborane, respectively. The resulting A-D-A and D-A type compounds showed red-shifted UV absorption and PL bands compared to those of simple dithienosiloles having no acceptor units, reported previously, and were highly photoluminescent in the solid state as well as in solution. Solvatochromic behaviour that would arise from the intramolecular donor-acceptor interaction were observed for the D-A type compounds with respect to the UV absorption and PL spectra. In addition, it was found that bis(dimesitylboryl)dithienosilole and (dimesitylboryl)(methylthio)dithienosilole responded to coexisting fluoride anions, leading to clear UV absorption and PL spectral changes in solutions. PMID:23295388

  2. Synthesis of nanostructured sol gel ITO films at different temperatures and study of their absorption and photoluminescence properties

    NASA Astrophysics Data System (ADS)

    Kundu, Susmita; Biswas, Prasanta K.

    2008-10-01

    Nanostructured indium tin oxide (ITO) films were deposited on silica glass by sol-gel dipping method from salt derived PVA based aqueous precursor. The films were cured at 250 °C, 350 °C, 450 °C, 600 °C, 700 °C and 900 °C and characterized by XRD, SEM, AFM techniques to observe heating effect on nanostructured feature. Nanocluster sizes were determined by TEM study. Different crystal phases of ITO were existed in the temperature range 250-900 °C. Quantum confinement behavior of the nanoclusters was observed for their size being near Bohr radius. Absorption, band gap and photoluminescence behavior of the nanstructured ITO films supported excitonic transitions due to the formation of electron hole pair generated by interaction of electromagnetic radiation.

  3. Triplet exciton energy transfer in polyfluorene doped with heavy metal complexes studied using photoluminescence and photoinduced absorption

    NASA Astrophysics Data System (ADS)

    Liao, H. H.; Meng, H. F.; Horng, S. F.; Lee, W. S.; Yang, J. M.; Liu, C. C.; Shy, J. T.; Chen, F. C.; Hsu, C. S.

    2006-12-01

    Modulated photoinduced absorption and photoluminescence are used to study triplet-to-triplet Dexter energy transfer in Ir-complexes/polyfluorene blend systems. There is no Dexter energy transfer for red iridium (III)bis[2-(9,9-dibutylfluorenyl)-1-isoquinoline(acetylacetonate)] (DFIr) and red iridium (III) bis([2-(2-benzo-thienyl)pyridinatoN,C3] acetyl-acetonate) (BtpIr) dopants. Although green iridium(III)tris[2-(4-tolyl)pyridinato-N,C2] [Ir(mppy)3] has no triplet confinement in polyfluorene host, it has clear evidence for Dexter energy transfer. Aggregation and dopant lifetime are shown to significantly affect the energy transfer. The presence of Dexter transfer implies the possibility to harvest triplet excitons of polyfluorene in polymer light-emitting diodes even without carrier trapping and triplet exciton confinement.

  4. Cellulose derivatives as excellent dispersants for single-wall carbon nanotubes as demonstrated by absorption and photoluminescence spectroscopy

    NASA Astrophysics Data System (ADS)

    Minami, Nobutsugu; Kim, Yeji; Miyashita, Kanae; Kazaoui, Said; Nalini, Balakrishnan

    2006-02-01

    Sodium carboxymethylcellulose, an etherified derivative of cellulose, has been found to realize stable aqueous dispersion of single-wall carbon nanotubes (SWNTs) that is twenty times more concentrated than when a surfactant is used under the same condition. The dispersion as well as thin films prepared from it exhibits well-resolved near-infrared photoluminescence peaks originating from band-gap transitions in semiconducting SWNTs, a sign of isolated individual tubes. Mechanical stretching of the film strongly aligns the tubes, as demonstrated by considerable dichroism in their absorption spectra. Possessing high optical quality and uniformity, these densely dispersed SWNT films are expected to serve as an important platform for SWNTs' optical, electrical, and optoelectronic applications, especially because cellulose derivatives are cheap, mass-produced, safe, water-processable, and environmentally benign.

  5. Absorption and photoluminescence of ultrathin pseudomorphic InAs/GaAs quantum wells

    NASA Technical Reports Server (NTRS)

    Ksendzov, A.; Grunthaner, F. J.; Liu, J. K.; Rich, D. H.; Terhune, R. W.; Wilson, B. A.

    1991-01-01

    Absorption data are presented for 2-4-monolayer InAs/GaAs single quantum wells obtained at 77 K using a polarization-based measurement technique. The special contribution of the optical loss features arising from bulk GaAs was minimized using the polarization selectivity of absorption in single quantum wells. The double structure observed in the spectra is attributed to transitions involving confined heavy holes and both confined and unconfined electron states.

  6. Ge Nanocluster Enhanced Er Photoluminescence

    NASA Astrophysics Data System (ADS)

    Guzman, Julian; Chrzan, Daryl C.; Haller, Eugene E.

    2010-03-01

    We investigated the enhancement of the Er^3+ photoluminescence (PL) at 1540 nm by the incorporation of Ge nanoclusters into Er-doped silica using ion beams. We found that the Er^3+ PL enhancement is due to the presence of Ge and not to the radiation damage from the ion-implantation process. We determined that the Er^3+ PL depends on the Ge content, postgrowth annealing, and crystallinity of the Ge nanoclusters. Furthermore, we observed that the Er^3+ PL signal is maximized after annealing at 685 C for 1 h. This is the temperature at which Ge nanoclusters begin to crystallize. Transmission electron microscopy studies were conducted to determine the size distribution of the Ge nanoclusters. Moreover, extended X-ray absorption fine structure measurements performed at the Ge-K and Er-LIII edges revealed that there is negligible Ge-Er bonding. This suggests that Er is either fully oxidized or that it is not located in the Ge nanoclusters. Therefore, we believe that the energy transfer process from the Ge nanoclusters to the Er ions occurs through a non-optical resonant dipole transfer (F"orster ProcessfootnotetextT. F"orster, Discuss. Faraday Soc. 27, 7 (1959). similar to what has been proposed for the Si nanocrystal case.footnotetextM. Fujii, M. Yoshida, S. Hayashi, and K. Yamamoto, J. Appl. Phys. 84, 4525 (1998).

  7. Measurement procedure for absolute broadband infrared up-conversion photoluminescent quantum yields: Correcting for absorption/re-emission

    SciTech Connect

    MacDougall, Sean K. W.; Ivaturi, Aruna; Marques-Hueso, Jose; Richards, Bryce S.

    2014-06-15

    The internal photoluminescent quantum yield (iPLQY) – defined as the ratio of emitted photons to those absorbed – is an important parameter in the evaluation and application of luminescent materials. The iPLQY is rarely reported due to the complexities in the calibration of such a measurement. Herein, an experimental method is proposed to correct for re-emission, which leads to an underestimation of the absorption under broadband excitation. Although traditionally the iPLQY is measured using monochromatic sources for linear materials, this advancement is necessary for nonlinear materials with wavelength dependent iPLQY, such as the application of up-conversion to solar energy harvesting. The method requires an additional measurement of the emission line shape that overlaps with the excitation and absorption spectra. Through scaling of the emission spectrum, at the long wavelength edge where an overlap of excitation does not occur, it is possible to better estimate the value of iPLQY. The method has been evaluated for a range of nonlinear material concentrations and under various irradiances to analyze the necessity and boundary conditions that favor the proposed method. Use of this refined method is important for a reliable measurement of iPLQY under a broad illumination source such as the Sun.

  8. Photoluminescence of a Te4+ center in zinc borate glass.

    PubMed

    Masai, Hirokazu; Yamada, Yasuhiro; Okumura, Shun; Kanemitsu, Yoshihiko; Yoko, Toshinobu

    2013-10-01

    Photoluminescent (PL) properties related to Te(4+) species in zinc borate glasses are examined. Broad emission was observed by the excitation of the PL excitation peak of Te(4+) present at the optical absorption edge. The emission intensity of Te(4+) in 5TeO(2)-50ZnO-45B(2)O(3) glass was thermally quenched in a temperature region over 100 K, suggesting that concentration quenching preferentially occurred. The lifetime of the emission was approximately 2.5 μs, which is characteristic of relaxation from the triplet excitation state of an ns(2)-type center. PMID:24081051

  9. Photoluminescence Enhancement of Adsorbed Species on Si Nanoparticles.

    PubMed

    Matsumoto, Taketoshi; Maeda, Masanori; Kobayashi, Hikaru

    2016-12-01

    We have fabricated Si nanoparticles from Si swarf using the beads milling method. The mode diameter of produced Si nanoparticles was between 4.8 and 5.2 nm. Si nanoparticles in hexane show photoluminescence (PL) spectra with peaks at 2.56, 2.73, 2.91, and 3.09 eV. The peaked PL spectra are attributed to the vibronic structure of adsorbed dimethylanthracene (DMA) impurity in hexane. The PL intensity of hexane with DMA increases by ~3000 times by adsorption on Si nanoparticles. The PL enhancement results from an increase in absorption probability of incident light by DMA caused by adsorption on the surface of Si nanoparticles. PMID:26744147

  10. Photoluminescence upconversion at GaAs /InGa P2 interfaces driven by a sequential two-photon absorption mechanism

    NASA Astrophysics Data System (ADS)

    Hylton, N. P.; Hinrichsen, T. F.; Vaquero-Stainer, A. R.; Yoshida, M.; Pusch, A.; Hopkinson, M.; Hess, O.; Phillips, C. C.; Ekins-Daukes, N. J.

    2016-06-01

    This paper reports on the results of an investigation into the nature of photoluminescence upconversion at GaAs /InGa P2 interfaces. Using a dual-beam excitation experiment, we demonstrate that the upconversion in our sample proceeds via a sequential two-photon optical absorption mechanism. Measurements of photoluminescence and upconversion photoluminescence revealed evidence of the spatial localization of carriers in the InGa P2 material, arising from partial ordering of the InGa P2 . We also observed the excitation of a two-dimensional electron gas at the GaAs /InGa P2 heterojunction that manifests as a high-energy shoulder in the GaAs photoluminescence spectrum. Furthermore, the results of upconversion photoluminescence excitation spectroscopy demonstrate that the photon energy onset of upconversion luminescence coincides with the energy of the two-dimensional electron gas at the GaAs /InGa P2 interface, suggesting that charge accumulation at the interface can play a crucial role in the upconversion process.

  11. Optical absorption and photoluminescence studies of gold nanoparticles deposited on porous silicon.

    PubMed

    Amran, Tengku Sarah Tengku; Hashim, Md Roslan; Al-Obaidi, Nihad K Ali; Yazid, Hanani; Adnan, Rohana

    2013-01-01

    We present an investigation on a coupled system consists of gold nanoparticles and silicon nanocrystals. Gold nanoparticles (AuNPs) embedded into porous silicon (PSi) were prepared using the electrochemical deposition method. Scanning electron microscope images and energy-dispersive X-ray results indicated that the growth of AuNPs on PSi varies with current density. X-ray diffraction analysis showed the presence of cubic gold phases with crystallite sizes around 40 to 58 nm. Size dependence on the plasmon absorption was studied from nanoparticles with various sizes. Comparison with the reference sample, PSi without AuNP deposition, showed a significant blueshift with decreasing AuNP size which was explained in terms of optical coupling between PSi and AuNPs within the pores featuring localized plasmon resonances. PMID:23331761

  12. Optical absorption and photoluminescence studies of gold nanoparticles deposited on porous silicon

    NASA Astrophysics Data System (ADS)

    Amran, Tengku Sarah Tengku; Hashim, Md Roslan; Al-Obaidi, Nihad K. Ali; Yazid, Hanani; Adnan, Rohana

    2013-01-01

    We present an investigation on a coupled system consists of gold nanoparticles and silicon nanocrystals. Gold nanoparticles (AuNPs) embedded into porous silicon (PSi) were prepared using the electrochemical deposition method. Scanning electron microscope images and energy-dispersive X-ray results indicated that the growth of AuNPs on PSi varies with current density. X-ray diffraction analysis showed the presence of cubic gold phases with crystallite sizes around 40 to 58 nm. Size dependence on the plasmon absorption was studied from nanoparticles with various sizes. Comparison with the reference sample, PSi without AuNP deposition, showed a significant blueshift with decreasing AuNP size which was explained in terms of optical coupling between PSi and AuNPs within the pores featuring localized plasmon resonances.

  13. IRRS, UV-Vis-NIR absorption and photoluminescence upconversion in Ho{sup 3+}-doped oxyfluorophosphate glasses

    SciTech Connect

    Karmakar, Basudeb . E-mail: basudebk@cgcri.res.in

    2005-09-15

    Infrared reflection spectroscopic (IRRS), ultraviolet-visible-near infrared (UV-Vis-NIR) absorption and photoluminescence upconversion properties with special emphasis on the spectrochemistry of the oxyfluorophosphate (oxide incorporated fluorophosphates) glasses of the Ba(PO{sub 3}){sub 2}-AlF{sub 3}-CaF{sub 2}-SrF{sub 2}-MgF{sub 2}-Ho{sub 2}O{sub 3} system have been studied with different concentrations (0.1, 0.3 and 1.0 mol%) of Ho{sub 2}O{sub 3}. IRRS spectral band position and intensity of Ho{sup 3+} ion doped oxyfluorophosphate glasses have been discussed in terms of reduced mass and force constant. UV-Vis-NIR absorption band position has been justified with quantitative calculation of nephelauxetic parameter and covalent bonding characteristics of the host. NIR to visible upconversion has been investigated by exciting at 892 nm at room temperature. Three upconverted bands originated from the {sup 5}F{sub 3}{yields}{sup 5}I{sub 8} ({sup 5}S{sub 2}, {sup 5}F{sub 4}){yields}{sup 5}I{sub 8} and {sup 5}F{sub 5}{yields}{sup 5}I{sub 8} transitions have found to be centered at 491 nm (blue, medium), 543 nm (green, very strong) and 658 nm (red, weak), respectively. These bands have been justified from the evaluation of the absorption, normal (down conversion) fluorescence and excitation spectra. The upconversion processes have been explained by the excited state absorption (ESA), energy transfer (ET) and cross relaxation (CR) mechanisms involving population of the metastable (storage) energy levels by multiphonon deexcitation effect. It is evident from the IRRS study that the upconversion phenomena are expedited by the low multiphonon relaxation rate in oxyfluorophosphate glasses owing to their high intense low phonon energy ({approx}600 cm{sup -1}) which is very close to that of fluoride glasses (500-600 cm{sup -1})

  14. Near-infrared photoluminescence and ligand K-edge x-ray absorption spectroscopies of AnO2Cl42-(An:u, NP, Pu)

    SciTech Connect

    Wilkerson, Marianne P; Berg, John M; Clark, David L; Conradson, Steven D; Hobart, David E; Kozimor, Stosh A; Scott, Brian L

    2008-01-01

    We have used photoluminescence and X-ray absorption spectroscopies to investigate electronic structures and metal-ligand bonding of a series of An02CI/ ' (An = U, Np, Pu) compounds. Specifically, we will discuss time-resolved near-infrared emission spectra of crystalline Cs2U(An)02C14 (An = Np and Pu) both at 23 K and 75 K, as well as chlorine Kedge X-ray absorption spectra ofCs2An02CI4 (An = U, Np).

  15. Infrared photoluminescence of composite films containing quasi-isolated multiwalled carbon nanotubes and carbon nanoshells.

    PubMed

    Reyes-Reyes, M; Segura-Cardenas, E; Gorbatchev, A Yu; López-Sandoval, R

    2010-07-01

    Films of small irregular-shaped aggregates composed by several layers of turbostratic graphite encapsulating iron nanoparticles, like carbon nanoshells, and quasi-isolated multi-walled carbon nanotubes (MWCNTs), were synthesized by the chemical vapor deposition method on glass substrates. Quasi-isolated MWCNTs were found emerging in different directions on the agglomerates composed of carbon nanoshells. The morphological properties of the films were characterized using scanning electron microscopy, high-resolution transmission electron microscopy and Raman spectroscopy, whereas their optical properties were investigated using optical absorption and photoluminescence (PL) spectroscopy. The studies show a high-intensity PL signal in the infrared at room temperature. This PL signal shows several peaks, which cannot be explained by a blackbody emission. However, the overall PL signal could be a combination of the black emission and electronic transitions. Furthermore, the observed infrared PL emission could be ideal for potential applications such as in gas sensors, infrared detectors and so on. PMID:21128424

  16. Photoluminescence excited by ArF and KrF lasers and optical absorption of stishovite mono-crystal

    NASA Astrophysics Data System (ADS)

    Trukhin, Anatoly N.; Dyuzheva, Tatyana I.; Lityagina, Ludmila M.; Bendeliani, Nikolai A.

    2008-04-01

    Two photoluminescence bands were found in a stishovite (silicon dioxide) mono-crystal sample under ArF (193 nm) and KrF (248 nm) excitation. The blue band is situated at 3.17 ± 0.02 eV in the case of ArF and at 3 ± 0.2 in the case of KrF. The UV band is at 4.55 ± 0.05 eV in the case of ArF and at 4.5 ± 0.05 eV in the case of KrF. The position of the UV emission band correlates with that excited by x rays. This position is 4.6 ± 0.05 eV with FWHM 0.8 ± 0.05 eV (Truhins et al 2003 Solid State Commun. 127 415). The blue band possesses slow decay kinetics with time constant 16 ± 2 µs and the UV band is fast on the level of 2 ± 0.5 ns, similarly for both lasers. Thermal quenching of both bands begins for T higher than 150 K. The activation energies are similar for intensity and time constant, and are equal to 0.23 ± 0.01 eV and 0.13 ± 0.01 eV for blue and UV bands, respectively, with equal values of frequency factor, 2 × 1011 s-1. Optical absorption contains bands at 4.5, 5.5, and 7 eV and a strong band starting from 7 eV adjacent to the intrinsic absorption threshold above 8.75 eV. Excitation at 7.86 eV (F2 laser) does not provide luminescence. The nature of the luminescence excited in the transparency range of stishovite is ascribed to a defect, presumably created by previous irradiation of the crystal. Similarity of the stishovite luminescence to that of oxygen-deficient silica glass and also to that induced by irradiation of α-quartz crystals allows us to conclude similar natures for the defect centers in these dissimilar materials.

  17. Temperature dependent photoluminescence from lead sulfide nanosheets and nanocubes.

    PubMed

    Kim, Jungdong; Kim, Seung Gi; Oh, Eunsoon; Kim, Sang Hyuk; Choi, Won Jun

    2016-01-29

    We studied temperature dependent photoluminescence (PL) spectra in the mid-infrared range from lead sulfide (PbS) nanosheets with an average thickness of 25 nm and nanocubes grown by solvothermal and hydrothermal methods. Distinct bandedge PL emission was observed in the whole temperature range between 10 and 300 K, indicating the high optical quality of these nanostructures. The PL peak of the nanosheets was found at 0.326 eV at 10 K, about 40 meV higher than that of bulk PbS due to the quantum confinement effect, whereas no confinement effect was observed for the nanocubes. We also demonstrate that the absorption edges of the nanocubes and nanosheets in the transmission spectra agree very well with their fundamental bandgap. PMID:26656180

  18. PL and FT-IR characterization of novel polymer thin films: PVCz mixed with perylene and fatty acids

    NASA Astrophysics Data System (ADS)

    Kusano, Hiroyuki; Kuruma, Ichiro; Kitagawa, Masahiko; Ichino, Kunio; Kobayashi, Hiroshi

    1997-04-01

    We have investigated the effect of addition of stearic acid in poly( N-vinylcarbazole) (PVCz) films doped with perylene. Samples were prepared by spin coating technique and characterized by photoluminescence (PL) and Fourier transform-infrared (FT-IR) absorption. It was elucidated that PL emission due to perylene at 450 nm and 480 nm was enhanced and the concentration quenching of the perylene emission was reduced by the addition of stearic acid. Orientation ordering of carbazole base plane and/or perylene ring plane was suggested from IR measurement.

  19. Thermally Engineered Blue Photoluminescence of Porous Anodic Alumina Membranes for Promising Optical Biosensors

    NASA Astrophysics Data System (ADS)

    Bu, Sang Don; Cho, Sam Yeon; Choi, Yong Chan; Kim, Jin Woo; Han, Jin Kyu; Kwak, Jin Ho; Yang, Sun A.

    Optical biosensors based on porous anodic alumina membranes (PAAMs) have shown to be an effective device because of their unique optical properties and biocompatibility. Among various optical properties, photoluminescence (PL) emission derived from PAAMs is one of the most suitable characteristics. However, the origin of PL from PAA is unclear and still in doubt. Therefore, it is essential for further potential practical applications to understand the origin of PL and PL variations. Here, we investigate the effects of post-annealing temperatures on the blue PL of amorphous PAAMs fabricated in oxalic acid. We find that the blue PL emission is strongly dependent on the thermal properties. A strong blue PL at a peak of ~460 nm is observed from the initial PAAM (not annealed PAAM) and this PL band can be divided into two Gaussian components at 458 ~ +/- ~ 4 nm (P1 band) and 517 ~ +/- 7nm (P2 band). As the temperature increases to 600 ° C , the intensities of two PL bands gradually increase. During temperature increases from 600 to 700 ° C , the P2 band increases but the P1 band decreases. The analyses of electron paramagnetic resonance, Fourier transform infrared spectroscopy, and ultraviolet-visible absorption spectroscopy show that the P1 and P2 bands originate from the unstable carboxylates and the stable carboxylates, respectively.

  20. Synthesis and characterization of a new photoluminescent material, tris-[1-10 phenanthroline] aluminium

    NASA Astrophysics Data System (ADS)

    Kumar, Rahul; Dvivedi, Avanish; Bhargava, Parag

    2016-05-01

    A new photoluminescent material namely tris-[1-10 Phenanthroline] Aluminium Al(Phen)3 has been synthesized and characterized. This material was characterized by fourier transform infrared spectroscopy (FTIR),nuclear magnetic resonance (NMR),mass spectroscopy, thermal gravimetric analysis (TGA),ultraviolet-visible spectroscopy(UV) and photoluminescence (PL). This material shows thermal stability up to 300°C. This material showed absorption maxima at 352nm which may be attributed to the moderate energy (π-π*) transition. Photoluminescence spectra for this material showed the most intense peak at 423 nm and the time resolved photoluminescence spectra showed two life time components. The decay times of the first and second component were 1.4ns and 4.8 ns respectively.

  1. Enhanced photoluminescence due to two-photon enhanced three-photon absorption in Mn{sup 2+}-doped ZnS quantum dots

    SciTech Connect

    Subha, Radhu; Nalla, Venkatram; Ji, Wei; Feng, Xiaobo; Vijayan, C.

    2014-10-15

    In this work, we have investigated the multi-photon absorption induced photoluminescence in Mn{sup 2+}-doped ZnS quantum dots in the wavelength range 860 – 1050 nm (Near-Infrared Window I). The observed three-photon action cross-section has been compared with the theoretical prediction under four band approximation. An enhancement of four to five orders has been observed in the range from 970 to 1050 nm compared to the theoretical value, which is attributed to two-photon enhanced three-photon absorption. Transient lifetime measurements reveal a lifetime of 0.35 ± 0.3 ms, which is four to five orders higher than other conventional fluorescent probes.

  2. Photoluminescence through in-gap states in phenylacetylene functionalized silicon nanocrystals

    NASA Astrophysics Data System (ADS)

    Angı, Arzu; Sinelnikov, Regina; Meldrum, Al; Veinot, Jonathan G. C.; Balberg, Isacc; Azulay, Doron; Millo, Oded; Rieger, Bernhard

    2016-04-01

    Optoelectronic properties of Si nanocrystals (SiNCs) were studied by combining scanning tunneling spectroscopy (STS) and optical measurements. The photoluminescence (PL) of phenylacetylene functionalized SiNCs red shifts relative to hexyl- and phenyl-capped counterparts, whereas the absorption spectra and the band gaps extracted from STS are similar for all surface groups. However, an in-gap state near the conduction band edge was detected by STS only for the phenylacetylene terminated SiNCs, which can account for the PL shift via relaxation across this state.Optoelectronic properties of Si nanocrystals (SiNCs) were studied by combining scanning tunneling spectroscopy (STS) and optical measurements. The photoluminescence (PL) of phenylacetylene functionalized SiNCs red shifts relative to hexyl- and phenyl-capped counterparts, whereas the absorption spectra and the band gaps extracted from STS are similar for all surface groups. However, an in-gap state near the conduction band edge was detected by STS only for the phenylacetylene terminated SiNCs, which can account for the PL shift via relaxation across this state. Electronic supplementary information (ESI) available: Detailed experimental procedures, additional HR-TEM images and PL lifetime data. See DOI: 10.1039/c6nr01435f

  3. Effect of graphene on photoluminescence properties of graphene/GeSi quantum dot hybrid structures

    SciTech Connect

    Chen, Y. L.; Ma, Y. J.; Wang, W. Q.; Ding, K.; Wu, Q.; Fan, Y. L.; Yang, X. J.; Zhong, Z. Y.; Jiang, Z. M.; Chen, D. D.; Xu, F.

    2014-07-14

    Graphene has been discovered to have two effects on the photoluminescence (PL) properties of graphene/GeSi quantum dot (QD) hybrid structures, which were formed by covering monolayer graphene sheet on the multilayer ordered GeSi QDs sample surfaces. At the excitation of 488 nm laser line, the hybrid structure had a reduced PL intensity, while at the excitation of 325 nm, it had an enhanced PL intensity. The attenuation in PL intensity can be attributed to the transferring of electrons from the conducting band of GeSi QDs to the graphene sheet. The electron transfer mechanism was confirmed by the time resolved PL measurements. For the PL enhancement, a mechanism called surface-plasmon-polariton (SPP) enhanced absorption mechanism is proposed, in which the excitation of SPP in the graphene is suggested. Due to the resonant excitation of SPP by incident light, the absorption of incident light is much enhanced at the surface region, thus leading to more exciton generation and a PL enhancement in the region. The results may be helpful to provide us a way to improve optical properties of low dimensional surface structures.

  4. Imaging electronic trap states in perovskite thin films with combined fluorescence and femtosecond transient absorption microscopy

    DOE PAGESBeta

    Xiao, Kai; Ma, Ying -Zhong; Simpson, Mary Jane; Doughty, Benjamin; Yang, Bin

    2016-04-22

    Charge carrier trapping degrades the performance of organometallic halide perovskite solar cells. To characterize the locations of electronic trap states in a heterogeneous photoactive layer, a spatially resolved approach is essential. Here, we report a comparative study on methylammonium lead tri-iodide perovskite thin films subject to different thermal annealing times using a combined photoluminescence (PL) and femtosecond transient absorption microscopy (TAM) approach to spatially map trap states. This approach coregisters the initially populated electronic excited states with the regions that recombine radiatively. Although the TAM images are relatively homogeneous for both samples, the corresponding PL images are highly structured. Themore » remarkable variation in the PL intensities as compared to transient absorption signal amplitude suggests spatially dependent PL quantum efficiency, indicative of trapping events. Furthermore, detailed analysis enables identification of two trapping regimes: a densely packed trapping region and a sparse trapping area that appear as unique spatial features in scaled PL maps.« less

  5. Imaging Electronic Trap States in Perovskite Thin Films with Combined Fluorescence and Femtosecond Transient Absorption Microscopy.

    PubMed

    Simpson, Mary Jane; Doughty, Benjamin; Yang, Bin; Xiao, Kai; Ma, Ying-Zhong

    2016-05-01

    Charge carrier trapping degrades the performance of organometallic halide perovskite solar cells. To characterize the locations of electronic trap states in a heterogeneous photoactive layer, a spatially resolved approach is essential. Here, we report a comparative study on methylammonium lead tri-iodide perovskite thin films subject to different thermal annealing times using a combined photoluminescence (PL) and femtosecond transient absorption microscopy (TAM) approach to spatially map trap states. This approach coregisters the initially populated electronic excited states with the regions that recombine radiatively. Although the TAM images are relatively homogeneous for both samples, the corresponding PL images are highly structured. The remarkable variation in the PL intensities as compared to transient absorption signal amplitude suggests spatially dependent PL quantum efficiency, indicative of trapping events. Detailed analysis enables identification of two trapping regimes: a densely packed trapping region and a sparse trapping area that appear as unique spatial features in scaled PL maps. PMID:27103096

  6. Influence of thiol capping on the photoluminescence properties of L-cysteine-, mercaptoethanol- and mercaptopropionic acid-capped ZnS nanoparticles.

    PubMed

    Tiwari, A; Dhoble, S J; Kher, R S

    2015-11-01

    Mercaptoethanol (ME), mercaptopropionic acid (MPA) and L-cysteine (L-Cys) having -SH functional groups were used as surface passivating agents for the wet chemical synthesis of ZnS nanoparticles. The effect of the thiol group on the optical and photoluminescence (PL) properties of ZnS nanoparticles was studied. L-Cysteine-capped ZnS nanoparticles showed the highest PL intensity among the studied capping agents, with a PL emission peak at 455 nm. The PL intensity was found to be dependent on the concentration of Zn(2+) and S(2-) precursors. The effect of buffer on the PL intensity of L-Cys-capped ZnS nanoparticles was also studied. UV/Vis spectra showed blue shifting of the absorption edge. PMID:25683960

  7. Anomalous photoluminescence in InP1-xBix.

    PubMed

    Wu, Xiaoyan; Chen, Xiren; Pan, Wenwu; Wang, Peng; Zhang, Liyao; Li, Yaoyao; Wang, Hailong; Wang, Kai; Shao, Jun; Wang, Shumin

    2016-01-01

    Low temperature photoluminescence (PL) from InP1-xBix thin films with Bi concentrations in the 0-2.49% range reveals anomalous spectral features with strong and very broad (linewidth of 700 nm) PL signals compared to other bismide alloys. Multiple transitions are observed and their energy levels are found much smaller than the band-gap measured from absorption measurements. These transitions are related to deep levels confirmed by deep level transient spectroscopy, which effectively trap free holes and enhance radiative recombination. The broad luminescence feature is beneficial for making super-luminescence diodes, which can theoretically enhance spatial resolution beyond 1 μm in optical coherent tomography (OCT). PMID:27291823

  8. Photoluminescence of dense nanocrystalline titanium dioxide thin films: effect of doping and thickness and relation to gas sensing.

    PubMed

    Mercado, Candy; Seeley, Zachary; Bandyopadhyay, Amit; Bose, Susmita; McHale, Jeanne L

    2011-07-01

    The photoluminescence (PL) of dense nanocrystalline (anatase) TiO(2) thin films is reported as a function of calcination temperature, thickness, and tungsten and nickel doping. The dependence of the optical absorption, Raman spectra, and PL spectra on heat treatment and dopants reveals the role of oxygen vacancies, crystallinity, and phase transformation in the performance of TiO(2) films used as gas sensors. The broad visible PL from defect states of compact and undoped TiO(2) films is found to be much brighter and less sensitive to the presence of oxygen than that of mesoporous films. The dense nanocrystalline grains and the nanoparticles comprising the mesoporous film are comparable in size, demonstrating the importance of film morphology and carrier transport in determining the intensity of defect photoluminescence. At higher calcination temperatures, the transformation to rutile results in the appearance of a dominant near-infrared peak. This characteristic change in the shape of the PL spectra demonstrates efficient capture of conduction band electrons by the emerging rutile phase. The W-doped samples show diminished PL with quenching on the red side of the emission spectrum occurring at lower concentration and eventual disappearance of the PL at higher W concentration. The results are discussed within the context of the performance of the TiO(2) thin films as CO gas sensors and the chemical nature of luminescent defects. PMID:21702459

  9. Intrinsic Photoluminescence Emission from Subdomained Graphene Quantum Dots.

    PubMed

    Yoon, Hyewon; Chang, Yun Hee; Song, Sung Ho; Lee, Eui-Sup; Jin, Sung Hwan; Park, Chanae; Lee, Jinsup; Kim, Bo Hyun; Kang, Hee Jae; Kim, Yong-Hyun; Jeon, Seokwoo

    2016-07-01

    The photoluminescence (PL) origin of bright blue emission arising from intrinsic states in graphene quantum dots (GQDs) is investigated. The bright PL of intercalatively acquired GQDs is attributed to favorably formed subdomains composed of four to seven carbon hexagons. Random and harsh oxidation which hinders the energetically favorable formation of subdomains causes weak and redshifted PL. PMID:27153519

  10. Light trapping efficiency comparison of Si solar cell textures using spectral photoluminescence.

    PubMed

    Barugkin, Chog; Allen, Thomas; Chong, Teck K; White, Thomas P; Weber, Klaus J; Catchpole, Kylie R

    2015-04-01

    The band-to-band absorption enhancement due to various types of light trapping structures is studied experimentally with photoluminescence (PL) on monocrystalline silicon wafers. Four basic light trapping structures are examined: reactive ion etched texture (RIE), metal-assisted etched texture (MET), random pyramid texture (RAN) and plasmonic Ag nanoparticles with a diffusive reflector (Ag/DR). We also compare two novel combined structures of front side RIE/rear side RAN and front side RIE/rear side Ag/DR. The use of photoluminescence allows us to measure the absorption due to band-to-band transitions only, and excludes parasitic absorption from free carriers and other sources. The measured absorptance spectra are used to calculate the maximum generation current for each structure, and the light trapping efficiency is compared to a recently-proposed figure of merit. The results show that by combining RIE with RAN and Ag/DR, we can fabricate two structures with excellent light trapping efficiencies of 55% and 52% respectively, which is well above previously reported values for similar wafer thicknesses. A comparison of the measured band-band absorption and the EQE of back-contact silicon solar cells demonstrates that PL extracted absorption provides a very good indication of long wavelength performance for high efficiency silicon solar cells. PMID:25968804

  11. Red photoluminescence in praseodymium-doped titanate perovskite films epitaxially grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Takashima, Hiroshi; Ueda, Kazushige; Itoh, Mitsuru

    2006-12-01

    Intense red photoluminescence (PL) under ultraviolet (UV) excitation was observed in epitaxially grown Pr-doped Ca0.6Sr0.4TiO3 perovskite films. The films were grown on SrTiO3 (100) substrates by pulsed laser deposition, and their epitaxial growth was confirmed by x-ray diffraction and reflected high-energy electron diffraction. The observed sharp PL peak centered at 610nm was assigned to the transition of Pr3+ ions from the D21 state to the H43 state. The PL intensity was markedly enhanced by postannealing treatments at 1000°C, above the film-growth temperature of 600 or 800°C. Because the excitation and absorption spectra are similar to each other, it was suggested that the UV energy absorbed by the host lattice was transferred to the Pr ions, resulting in the red luminescence.

  12. Optical absorption and photoluminescence properties of Dy3+ doped heavy metal borate glasses - Effect of modifier oxides

    NASA Astrophysics Data System (ADS)

    Sasi kumar, M. V.; Rajesh, D.; Balakrishna, A.; Ratnakaram, Y. C.

    2013-06-01

    The present paper aims at reporting the optical absorption and emission properties of Dy3+ doped alkali (Li, Na, K) and mixed alkali (Li-Na, Li-K, Na-K) heavy metal borate glasses. For these glasses X-ray diffraction (XRD), differential scanning calorimetry (DSC), optical absorption, emission and lifetime decay measurements were carried out. Glass transition temperatures are obtained from the DSC spectra. Judd-Ofelt theory has been used to derive the spectral intensities (f), Judd-Ofelt intensity parameters (Ω2, Ω4 and Ω6) and certain radiative properties. Using the Judd-Ofelt intensity parameters, radiative lifetimes (τR), branching ratios (β), integrated absorption cross-sections (Σ) and emission cross-sections (σP) were obtained. The variations in these parameters with the variation of glass matrix are discussed in detail. The decay lifetime of the 4F9/2 level has been measured from the decay profiles and compared with calculated lifetimes. From the emission spectra, chromacity color coordinates are calculated and indicated the white light emission for potassium glass matrices. It was observed that among various glass matrices, potassium glass matrix has exhibited large emission cross-section for 6F9/2 → 6H13/2 transition.

  13. Spin-Controlled Photoluminescence in Hybrid Nanoparticles Purple Membrane System

    PubMed Central

    2016-01-01

    Spin-dependent photoluminescence (PL) quenching of CdSe nanoparticles (NPs) has been explored in the hybrid system of CdSe NP purple membrane, wild-type bacteriorhodopsin (bR) thin film on a ferromagnetic (Ni-alloy) substrate. A significant change in the PL intensity from the CdSe NPs has been observed when spin-specific charge transfer occurs between the retinal and the magnetic substrate. This feature completely disappears in a bR apo membrane (wild-type bacteriorhodopsin in which the retinal protein covalent bond was cleaved), a bacteriorhodopsin mutant (D96N), and a bacteriorhodopsin bearing a locked retinal chromophore (isomerization of the crucial C13=C14 retinal double bond was prevented by inserting a ring spanning this bond). The extent of spin-dependent PL quenching of the CdSe NPs depends on the absorption of the retinal, embedded in wild-type bacteriorhodopsin. Our result suggests that spin-dependent charge transfer between the retinal and the substrate controls the PL intensity from the NPs. PMID:27018195

  14. Photoluminescence and upconversion on Ag/CdTe quantum dots

    NASA Astrophysics Data System (ADS)

    Ragab, A. E.; Gadallah, A.-S.; Mohamed, M. B.; Azzouz, I. M.

    2014-11-01

    Different sizes of aqueous CdTe QDs have been prepared by microwave via controlling the temperature and time of irradiation. To study the plasmonic effect on CdTe QDs, Silver NPs were prepared by using a chemical reduction method. Structure characterization of the nanocrystals (Ag NPs and CdTe QDs) was determined by transmission electron microscopy “TEM”. For optical characterization, the absorption and photolumincence (PL) spectra were measured. It has been found that there are two opposite behaviors (quenching and enhancement) in the fluorescence spectra based on the spectral coupling strength between Ag NPs and CdTe QDs. When there is strong overlapping, PL enhancement of CdTe QDs has been observed. On the other hand, when the overlapping is weak, the PL quenching was predominant at all Ag NPS concentrations. Input-output PL intensity dependence was also studied. Upconversion photoluminescence with low excitation intensity was observed in our CdTe QDs with a standard spectrofluorometer at excitation wavelength of 800 nm. Thermally assisted surface state mechanism has been proposed to be responsible for the upconverion process.

  15. Photoluminescence of a Plasmonic Molecule.

    PubMed

    Huang, Da; Byers, Chad P; Wang, Lin-Yung; Hoggard, Anneli; Hoener, Ben; Dominguez-Medina, Sergio; Chen, Sishan; Chang, Wei-Shun; Landes, Christy F; Link, Stephan

    2015-07-28

    Photoluminescent Au nanoparticles are appealing for biosensing and bioimaging applications because of their non-photobleaching and non-photoblinking emission. The mechanism of one-photon photoluminescence from plasmonic nanostructures is still heavily debated though. Here, we report on the one-photon photoluminescence of strongly coupled 50 nm Au nanosphere dimers, the simplest plasmonic molecule. We observe emission from coupled plasmonic modes as revealed by single-particle photoluminescence spectra in comparison to correlated dark-field scattering spectroscopy. The photoluminescence quantum yield of the dimers is found to be surprisingly similar to the constituent monomers, suggesting that the increased local electric field of the dimer plays a minor role, in contradiction to several proposed mechanisms. Aided by electromagnetic simulations of scattering and absorption spectra, we conclude that our data are instead consistent with a multistep mechanism that involves the emission due to radiative decay of surface plasmons generated from excited electron-hole pairs following interband absorption. PMID:26165983

  16. Photoacoustic and Photoluminescence Characterization of Passivated and Unpassivated Mn-Doped ZnS Nanoparticles

    NASA Astrophysics Data System (ADS)

    Cruz, Almira Briones; Shen, Qing; Toyoda, Taro

    2005-06-01

    In this study, passivated and unpassivated nanocrystalline ZnS with varying Mn2+ concentrations (ZnS:Mn) were synthesized and their photoacoustic (PA) and photoluminescence (PL) characteristics were studied. The PA intensity peak for the nanocrystalline ZnS was found to be blue-shifted compared with that for the bulk material due to quantum confinement effects. The difference of the PA signals of doped ZnS and undoped ZnS yielded the Mn2+ optical absorption spectra. The intensity of the PA peak increased linearly with Mn concentration. The PL spectra showed a peak position at 2.08 eV corresponding to the d-d transition of Mn2+. For the unpassivated sample, a decrease in the PL intensities for higher Mn concentrations was observed. This could be attributed to concentration quenching. Addition of acrylic acid as a passivator led to an increase in PL intensity for all Mn concentrations and prevented the decrease in the PL intensity for higher Mn concentrations. These could be attributed to the surface passivation, which reduces the nonradiative recombination probabilities, thus increasing PL intensities.

  17. Photoluminescence of monovalent indium centres in phosphate glass

    PubMed Central

    Masai, Hirokazu; Yamada, Yasuhiro; Okumura, Shun; Yanagida, Takayuki; Fujimoto, Yutaka; Kanemitsu, Yoshihiko; Ina, Toshiaki

    2015-01-01

    Valence control of polyvalent cations is important for functionalization of various kinds of materials. Indium oxides have been used in various applications, such as indium tin oxide in transparent electrical conduction films. However, although metastable In+ (5 s2 configuration) species exhibit photoluminescence (PL), they have attracted little attention. Valence control of In+ cations in these materials will be important for further functionalization. Here, we describe In+ species using PL and X-ray absorption fine structure (XAFS) analysis. Three absorption bands in the UV region are attributed to the In+ centre: two weak forbidden bands (1S0 → 3P1, 1S0 → 3P2) and a strong allowed band (1S0 → 1P1). The strongest PL excitation band cannot be attributed to the conventional allowed transition to the singlet excited state. Emission decay of the order of microseconds suggests that radiative relaxation occurs from the triplet excitation state. The XAFS analysis suggests that these In+ species have shorter In–O distances with lower coordination numbers than in In2O3. These results clearly demonstrate that In+ exists in a metastable amorphous network, which is the origin of the observed luminescent properties.

  18. Photoluminescence of monovalent indium centres in phosphate glass

    NASA Astrophysics Data System (ADS)

    Masai, Hirokazu; Yamada, Yasuhiro; Okumura, Shun; Yanagida, Takayuki; Fujimoto, Yutaka; Kanemitsu, Yoshihiko; Ina, Toshiaki

    2015-09-01

    Valence control of polyvalent cations is important for functionalization of various kinds of materials. Indium oxides have been used in various applications, such as indium tin oxide in transparent electrical conduction films. However, although metastable In+ (5 s2 configuration) species exhibit photoluminescence (PL), they have attracted little attention. Valence control of In+ cations in these materials will be important for further functionalization. Here, we describe In+ species using PL and X-ray absorption fine structure (XAFS) analysis. Three absorption bands in the UV region are attributed to the In+ centre: two weak forbidden bands (1S0 → 3P1, 1S0 → 3P2) and a strong allowed band (1S0 → 1P1). The strongest PL excitation band cannot be attributed to the conventional allowed transition to the singlet excited state. Emission decay of the order of microseconds suggests that radiative relaxation occurs from the triplet excitation state. The XAFS analysis suggests that these In+ species have shorter In-O distances with lower coordination numbers than in In2O3. These results clearly demonstrate that In+ exists in a metastable amorphous network, which is the origin of the observed luminescent properties.

  19. Photoinduced spectral changes of photoluminescent gold nanoclusters

    NASA Astrophysics Data System (ADS)

    Matulionytė, Marija; Marcinonytė, Raminta; Rotomskis, Ričardas

    2015-05-01

    Ultrasmall photoluminescent gold nanoclusters (Au NCs), composed of several atoms with sizes up to a few nanometers, have recently stimulated extensive interest. Unique molecule-like behaviors, low toxicity, and facile synthesis make photoluminescent Au NCs a very promising alternative to organic fluorophores and semiconductor quantum dots (QDs) in broad ranges of biomedical applications. However, using gold nanoparticles (Au NPs) for bioimaging might cause their degradation under continuous excitation with UV light, which might result in toxicity. We report spectral changes of photoluminescent 2-(N-morpholino) ethanesulfonic acid (MES)-coated (Au-MES) NCs under irradiation with UV/blue light. Photoluminescent water soluble Au-MES NCs with a photoluminescence (PL) band maximum at 476 nm (λex=420 nm) were synthesized. Under irradiation with 402 nm wavelength light the size of photoluminescent Au-MES NCs decreased (λem=430 nm). Irradiating the sample solution with 330 nm wavelength light, nonluminescent Au NPs were disrupted, and photoluminescent Au NCs (λem=476 nm) were formed. Irradiation with 330 nm wavelength light did not directly affect photoluminescent Au-MES NCs, however, increase in PL intensity indicated the formation of photoluminescent Au NCs from the disrupted nonluminescent Au NPs. This study gives a good insight into the photostability of MES-coated Au NPs under continuous excitation with UV/blue light.

  20. Photoinduced spectral changes of photoluminescent gold nanoclusters.

    PubMed

    Matulionytė, Marija; Marcinonytė, Raminta; Rotomskis, Ričardas

    2015-05-01

    Ultrasmall photoluminescent gold nanoclusters (Au NCs), composed of several atoms with sizes up to a few nanometers, have recently stimulated extensive interest. Unique molecule-like behaviors, low toxicity, and facile synthesis make photoluminescent Au NCs a very promising alternative to organic fluorophores and semiconductor quantum dots (QDs) in broad ranges of biomedical applications. However, using gold nanoparticles (Au NPs) for bioimaging might cause their degradation under continuous excitation with UV light, which might result in toxicity. We report spectral changes of photoluminescent 2-(N-morpholino) ethanesulfonic acid (MES)-coated (Au-MES) NCs under irradiation with UV/blue light. Photoluminescent water soluble Au- MES NCs with a photoluminescence (PL) band maximum at 476 nm (λex = 420 nm) were synthesized. Under irradiation with 402 nm wavelength light the size of photoluminescent Au-MES NCs decreased (λem = 430 nm). Irradiating the sample solution with 330 nm wavelength light, nonluminescent Au NPs were disrupted, and photoluminescent Au NCs (λem = 476 nm) were formed. Irradiation with 330 nm wavelength light did not directly affect photoluminescent Au-MES NCs, however, increase in PL intensity indicated the formation of photoluminescent Au NCs from the disrupted nonluminescent Au NPs. This study gives a good insight into the photostability of MES-coated Au NPs under continuous excitation with UV/blue light. PMID:25517487

  1. Pressure-induced Co2+ photoluminescence quenching in MgAl2O4

    NASA Astrophysics Data System (ADS)

    Nataf, Lucie; Rodríguez, Fernando; Valiente, Rafael

    2012-09-01

    This work investigates the electronic structure and photoluminescence (PL) of Co2+-doped MgAl2O4 and their pressure dependence by time-resolved spectroscopy. The variations of the visible absorption band and its associated emission at 663 nm (τ = 130 ns at ambient conditions) with pressure/temperature can be explained on the basis of a configurational energy model. It provides an interpretation for both the electronic structure and the excited-state phenomena yielding photoluminescence emission and the subsequent quenching. We show that there is an excited-state crossover (ESCO) [4T1(P)↔2E(G)] at ambient pressure, which is responsible for the evolution of the emission spectrum from a broadband emission between 300 K and 100 K to a narrow-line emission at lower temperatures. Contrary to expectations from the Tanabe-Sugano diagram, instead of enhancing ESCO phenomena, pressure reduces PL and even suppresses it (PL quenching) above 6 GPa. We explain such variations in terms of pressure-induced nonradiative relaxation to lower excited states: 2E(G)→4T1(F). The variation of PL intensity and its associated lifetime with pressure supports the proposed interpretation.

  2. Photoluminescence in Carborane-Stilbene Triads: A Structural, Spectroscopic, and Computational Study.

    PubMed

    Cabrera-González, Justo; Viñas, Clara; Haukka, Matti; Bhattacharyya, Santanu; Gierschner, Johannes; Núñez, Rosario

    2016-09-12

    A set of triads in which o- and m-carborane clusters are bonded to two stilbene units through Ccluster -CH2 bonds was synthesized, and their structures were confirmed by X-ray diffraction. A study on the influence of the o- and m- isomers on the absorption and photoluminescence properties of the stilbene units in solution revealed no charge-transfer contributions in the lowest excited state, as confirmed by (TD)DFT calculations. The presence of one or two B-I groups in m-carborane derivatives does not affect the emission properties of the stilbenes in solution, probably due to the rather large distance between the iodo substituents and the fluorophore. Nevertheless, a significant redshift of the photoluminescence (PL) emission maximum in the solid state (thin films and powder samples) compared to solution was observed; this can be traced back to PL sensitization, most probably due to more densely packed stilbene moieties. Remarkably, the PL absolute quantum yields of powder samples are significantly higher than those in solution, and this was attributed to the restricted environment and the aforementioned sensitization. Thus, the bonding of the carborane clusters to two stilbene units preserves their PL behavior in solution, but produces significant changes in the solid state. Furthermore, iodinated species can be considered to be promising precursors for theranostic agents in which both imaging and therapeutic functions could possibly be combined. PMID:27555050

  3. Photoluminescence Study of Long Wavelength Superlattice Infrared Detectors

    NASA Technical Reports Server (NTRS)

    Hoglund, Linda; Khoshakhlagh, Arezou; Soibel, Alexander; Ting, David Z.; Hill, Cory J.; Keo, Sam; Gunapala, Sarath D.

    2011-01-01

    In this paper, the relation between the photoluminescence (PL) intensity and the PL peak wavelength was studied. A linear decrease of the PL intensity with increasing cut-off wavelength of long wavelength infrared CBIRDs was observed at 77 K and the trend remained unchanged in the temperature range 10 - 77 K. This relation between the PL intensity and the peak wavelength can be favorably used for comparison of the optical quality of samples with different PL peak wavelengths. A strong increase of the width of the PL spectrum in the studied temperature interval was observed, which was attributed to thermal broadening.

  4. Photoluminescence properties of Jahn-Teller transition-metal ions

    NASA Astrophysics Data System (ADS)

    Sanz-Ortiz, Marta N.; Rodríguez, Fernando

    2009-09-01

    This work investigates the influence of electron-phonon coupling associated with E ⊗e and T ⊗e Jahn-Teller (JT) effect in different transition-metal (TM) ions on de-excitation phenomena through nonradiative multiphonon relaxation, i.e., photoluminescence (PL) quenching. We developed a configurational curve model which is able to predict from the absorption spectrum whether a given JT-TM ion is PL or quenched. The prediction is made on the basis of an adapted Dexter-Klick-Russell parameter for JT systems, defined in terms of spectroscopic parameters through ΛJT=αΔeabs/Eabs, where Δeabs refers to the splitting of the parent octahedral Eg states by the JT distortion in E ⊗e (α =3/4) or T ⊗e (α =1/4), and Eabs is the energy of the first absorption band involving electronic transition between Eg and T2g. We show that PL in any JT-TM ion occurs whenever ΛJT<0.1 or is quenched if ΛJT>0.2. This result is noteworthy since it allows us to establish structural requirements for the JT-TM ion and the host crystal to be PL. Although PL properties of materials containing TM ions depend on a variety of structural factors such as the electronic configuration, the site symmetry, and the crystal field produced by neighboring atoms, the present model achieves this goal through a simple spectroscopic parameter: ΛJT. In this work we correlated the PL properties of different sixfold-coordinated JT systems such as Ti3+, Cu2+, Mn3+, Cr2+, Fe2+, Co3+, and Ni3+ in halides and oxides with ΛJT obtained from their respective absorption spectra. From this analysis we conclude that depending on the nature of the JT coupling and its strength, PL is either strongly favored or quenched in T ⊗e while it is mostly quenched in E ⊗e systems due to the larger JT distortion.

  5. Employing the plasmonic effect of the Ag-graphene composite for enhancing light harvesting and photoluminescence quenching efficiency of poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene].

    PubMed

    Ran, Chenxin; Wang, Minqiang; Gao, Weiyin; Yang, Zhi; Deng, Jianping; Ding, Jijun; Song, Xiaohui

    2014-03-14

    In this work, we report that the Ag-graphene composite (AGC) can effectively enhance the light harvesting and photoluminescence (PL) quenching efficiency of poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] (MEH-PPV). Loading the AGC on MEH-PPV leads to improved light absorption ability and PL quenching efficiency, which is due to the strong interaction between localized surface plasmon resonance (LSPR)-activated Ag nanoparticles and the MEH-PPV molecule. Control experiment reveals that the combination of graphene and Ag nanoparticles achieves superior light absorptivity and PL quenching ability compared with individual graphene and Ag NPs. The exponential shape of the Stern-Volmer plot implies that both Ag and graphene in the AGC can offer the quenching pathway for the PL quenching process. We also found that the AGC with a broader LSPR absorption range is competitive in enhancing the light absorption ability and PL quenching efficiency of the MEH-PPV-AGC composite, because it can expand LSPR-induced light harvesting and PL quenching response to a wider absorption range. PMID:24457425

  6. Photoluminescence method of testing double heterostructure wafers

    SciTech Connect

    Besomi, P.R.; Wilt, D.P.

    1984-04-10

    Under photoluminescence (PL) excitation, the lateral spreading of photo-excited carriers can suppress the photoluminescence signal from double heterostructure (DH) wafers containing a p-n junction. In any DH with a p-n junction in the active layer, PL is suppressed if the power of the excitation source does not exceed a threshold value. This effect can be advantageously used for a nondestructive optical determination of the top cladding layer sheet conductance as well as p-n junction misplacement, important parameters for injection lasers and LEDs.

  7. Multi-mode interference revealed by two photon absorption in silicon rich SiO{sub 2} waveguides

    SciTech Connect

    Manna, S. E-mail: mattia.mancinelli@unitn.it; Ramiro-Manzano, F.; Mancinelli, M. E-mail: mattia.mancinelli@unitn.it; Turri, F.; Pavesi, L.; Ghulinyan, M.; Pucker, G.

    2015-02-16

    Photoluminescence (PL) from Si nanocrystals (NCs) excited by two-photon absorption (TPA) has been observed in Si nanocrystal-based waveguides fabricated by plasma enhanced chemical vapor deposition. The TPA excited photoluminescence emission resembles the one-photon excited photoluminescence arising from inter-band transitions in the quantum confined Si nanocrystals. By measuring the non-linear transmission of waveguides, a large TPA coefficient of β up to 10{sup −8 }cm/W has been measured at 1550 nm. These values of β depend on the Si NCs size and are two orders of magnitude larger than the bulk silicon value. Here, we propose to use the TPA excited visible PL emission as a tool to map the spatial intensity profile of the 1550 nm propagating optical modes in multimode waveguides. In this way, multimode interference has been revealed experimentally and confirmed through a finite element simulation.

  8. Anomalous Light Emission and Wide Photoluminescence Spectra in Graphene Quantum Dot: Quantum Confinement from Edge Microstructure.

    PubMed

    Huang, Pu; Shi, Jun-Jie; Zhang, Min; Jiang, Xin-He; Zhong, Hong-Xia; Ding, Yi-Min; Cao, Xiong; Wu, Meng; Lu, Jing

    2016-08-01

    The physical origin of the observed anomalous photoluminescence (PL) behavior, that is, the large-size graphene quantum dots (GQDs) exhibiting higher PL energy than the small ones and the broadening PL spectra from deep ultraviolet to near-infrared, has been debated for many years. Obviously, it is in conflict with the well-accepted quantum confinement. Here we shed new light on these two notable debates by state-of-the-art first-principles calculations based on many-body perturbation theory. We find that quantum confinement is significant in GQDs with remarkable size-dependent exciton absorption/emission. The edge environment from alkaline to acidic conditions causes a blue shift of the PL peak. Furthermore, carbon vacancies are inclined to assemble at the GQD edge and form the tiny edge microstructures. The bound excitons, localized inside these edge microstructures, determine the anomalous PL behavior (blue and UV emission) of large-size GQDs. The bound excitons confined in the whole GQD lead to the low-energy transition. PMID:27409980

  9. Photoluminescence of friction-induced polymer degradation products

    NASA Astrophysics Data System (ADS)

    Vettegren, V. I.; Savitskiĭ, A. V.; Scherbakov, I. P.

    2008-07-01

    We have studied the photoluminescence (PL) spectra of polyethylene (PE), polypropylene, and polyamide 6 excited using laser radiation with a photon energy (˜3.68 eV) within a spectral interval (3.65 3.75 eV) corresponding to the optical absorption due to C=O bonds. The PL spectra of the products of friction-induced degradation of these polymers display an intense peak in the region of about 2 2.5 eV. In order to elucidate the nature of this peak, the surface of PE film samples upon friction (rubbing) has been studied using IR spectroscopy in the attenuated total reflection (ATR) mode. The ATR spectra of these samples exhibit a sharp increase in the intensity of bands assigned to vibrations of the conjugated sequences of carbon-carbon bonds in the backbone of PE macromolecules. This result allows the PL peak at 2 2.5 eV to be assigned to the π* → π transition in the conjugated sequences of such bonds excited by means of the intramolecular energy transfer from C=O bonds.

  10. Photoluminescence from doped ZnS nanostructures

    NASA Astrophysics Data System (ADS)

    Karar, N.

    2007-05-01

    Photoluminescence (PL) properties of differently doped nanocrystalline ZnS encapsulated by ZnO (ZnS/ZnO) are reported. It is found that in all cases aluminium as an extra/additional dopant leads to PL enhancement. In comparison to reported blue emitting bulk ZnS:Ag, or green emitting bulk ZnS:Cu, our nanocrystalline samples show a different PL emission profile. This observation is attributed to nanogranule formation, different dopant levels and ZnO capping related energy level modifications.

  11. Doped Semiconductor-Nanocrystal Emitters with Optimal Photoluminescence Decay Dynamics in Microsecond to Millisecond Range: Synthesis and Applications

    PubMed Central

    2015-01-01

    Transition metal doped semiconductor nanocrystals (d-dots) possess fundamentally different emission properties upon photo- or electroexcitation, which render them as unique emitters for special applications. However, in comparison with intrinsic semiconductor nanocrystals, the potential of d-dots has been barely realized, because many of their unique emission properties mostly rely on precise control of their photoluminescence (PL) decay dynamics. Results in this work revealed that it would be possible to obtain bright d-dots with nearly single-exponential PL decay dynamics. By tuning the number of Mn2+ ions per dot from ∼500 to 20 in Mn2+ doped ZnSe nanocrystals (Mn:ZnSe d-dots), the single-exponential PL decay lifetime was continuously tuned from ∼50 to 1000 μs. A synthetic scheme was further developed for uniform and epitaxial growth of thick ZnS shell, ∼7 monolayers. The resulting Mn:ZnSe/ZnS core/shell d-dots were found to be essential for necessary environmental durability of the PL properties, both steady-state and transient ones, for the d-dot emitters. These characteristics combined with intense absorption and high PL quantum yields (70 ± 5%) enabled greatly simplified schemes for various applications of PL lifetime multiplexing using Mn:ZnSe/ZnS core/shell d-dots. PMID:27163024

  12. Radiative recombination model of degenerate semiconductor and photoluminescence properties of 3C-SiC by P and N doping

    NASA Astrophysics Data System (ADS)

    Wang, Kun; Fang, Xiao-Yong; Li, Ya-Qin; Yin, Ai-Cha; Jin, Hai-Bo; Yuan, Jie; Cao, Mao-Sheng

    2012-08-01

    Based on radiative recombination theory, we have established a recombination model that can be used to calculate photoluminescence (PL) intensity for degenerate semiconductors. Using this model and density functional theory, we calculated photoluminescence excitation (PLE) and PL spectra of intrinsic 3C-SiC, P-doped SiC and N-doped SiC. The violet or near ultraviolet PLE peaks were found to be observed in PLE spectra for Sin-1PCn and SinNCn-1 (n = 4, 8, 12, and 16). Compared to intrinsic 3C-SiC, doped 3C-SiC exhibits higher PL peaks which for P-doped SiC are in the indigo spectral region, near the 3C-SiC's peak, and for N-doped SiC appear in the green. The phenomena are studied through analyses of band structure, carrier concentration, and absorption. For doped 3C-SiC, the PL properties are mainly improved by the band-gap transformation from indirect to direct and the increase in carrier concentration near the Fermi level.

  13. Photoluminescence properties of cerium oxide nanoparticles as a function of lanthanum content

    SciTech Connect

    Deus, R.C.; Cortés, J.A.; Ramirez, M.A.; Ponce, M.A.; Andres, J.; Rocha, L.S.R.; and others

    2015-10-15

    Highlights: • CeO{sub 2} nanoparticles were obtained by microwave-hydrothermal method. • Rietveld refinement reveals a cubic structure. • KOH mineralizer agent exhibit weak agglomeration at low temperature and shorter time. - Abstract: The structural and photoluminescent properties at room temperature of CeO{sub 2} and La-doped CeO{sub 2} particles were undertaken. The obtained particles were synthesized by a microwave-assisted hydrothermal method (MAH) under different lanthanum contents. X-ray diffraction (XRD), Fourier transform infrared (FT-IR), Fourier transform Raman (FT-Raman), Ultra-violet spectroscopy (UV–vis) and photoluminescence (PL) measurements were carried out. XRD revealed that the powders are free of secondary phases and crystallize in the cubic structure. Raman data show that increasing La doping content increase oxygen vacancies due to lattice expansion. The UV/vis absorption spectroscopy suggested the presence of intermediate energy levels in the band gap of structurally ordered powders. Lanthanum addition creates oxygen vacancies and shifts the photoluminescence in the low energy range leading to intense PL emission.

  14. Synthesis and photoluminescent and nonlinear optical properties of manganese doped ZnS nanoparticles

    NASA Astrophysics Data System (ADS)

    Nazerdeylami, Somayeh; Saievar-Iranizad, Esmaiel; Dehghani, Zahra; Molaei, Mehdi

    2011-01-01

    In this work we synthesized ZnS:Mn 2+ nanoparticles by chemical method using PVP (polyvinylpyrrolidone) as a capping agent in aqueous solution. The structure and optical properties of the resultant product were characterized using UV-vis optical spectroscopy, X-ray diffraction (XRD), photoluminescence (PL) and z-scan techniques. UV-vis spectra for all samples showed an excitonic peak at around 292 nm, indicating that concentration of Mn 2+ ions does not alter the band gap of nanoparticles. XRD patterns showed that the ZnS:Mn 2+ nanoparticles have zinc blende structure with the average crystalline sizes of about 2 nm. The room temperature photoluminescence (PL) spectrum of ZnS:Mn 2+ exhibited an orange-red emission at 594 nm due to the 4T 1- 6A 1 transition in Mn 2+. The PL intensity increased with increase in the Mn 2+ ion concentration. The second-order nonlinear optical properties of nanoparticles were studied using a continuous-wave (CW) He-Ne laser by z-scan technique. The nonlinear refractive indices of nanoparticles were in the order of 10 -8 cm 2/W with negative sign and the nonlinear absorption indices of these nanoparticles were obtained to be about 10 -3 cm/W with positive sign.

  15. Anomalous photoluminescence in InP1‑xBix

    NASA Astrophysics Data System (ADS)

    Wu, Xiaoyan; Chen, Xiren; Pan, Wenwu; Wang, Peng; Zhang, Liyao; Li, Yaoyao; Wang, Hailong; Wang, Kai; Shao, Jun; Wang, Shumin

    2016-06-01

    Low temperature photoluminescence (PL) from InP1‑xBix thin films with Bi concentrations in the 0–2.49% range reveals anomalous spectral features with strong and very broad (linewidth of 700 nm) PL signals compared to other bismide alloys. Multiple transitions are observed and their energy levels are found much smaller than the band-gap measured from absorption measurements. These transitions are related to deep levels confirmed by deep level transient spectroscopy, which effectively trap free holes and enhance radiative recombination. The broad luminescence feature is beneficial for making super-luminescence diodes, which can theoretically enhance spatial resolution beyond 1 μm in optical coherent tomography (OCT).

  16. Photoluminescence and energy transfer process in Gd2O3:Eu3+, Tb3+

    NASA Astrophysics Data System (ADS)

    Selvalakshmi, T.; Bose, A. Chandra

    2016-05-01

    Variation in photoluminescence (PL) properties of Eu3+ and Tb3+ as a function of co-dopant (Tb3+) concentration are studied for Gd2-x-yO3: Eu3+x Tb3+y (x = 0.02, y = 0.01, 0.03, 0.05). The crystal structure analysis is carried out by X-ray Diffraction (XRD). Absence of addition peaks corresponding europium or terbium phase confirms the phase purity. Diffuse reflectance spectroscopy (DRS) reveals the absorption peaks corresponding to host matrix, Eu3+ and Tb3+. The bandgap calculated from Kubelka - Munk function is also reported. PL spectra are recorded at the excitation wavelength of 307 nm and the emission peak corresponding to Eu3+ confirms the energy transfer from Tb3+ to Eu3+. The agglomeration of particles acts as quenching centres for energy transfer at higher concentrations.

  17. Structural, photoluminescence and picosecond nonlinear optical effect of In-doped ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Yan, Xiao-Yan; Yao, Cheng-Bao; Li, Jin; Hu, Jun-Yan; Li, Qiang-Hua; Yang, Shou-Bin

    2016-05-01

    In-doped ZnO (IZO) nanowires were grown using the chemical vapour deposition method. The IZO nanowires have been characterized by scanning electronic microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and UV-Visible spectroscopy. The PL results demonstrated a larger band-gap for the IZO nanowires in comparison to the undoped ZnO. Two major emission peaks were observed for the IZO nanowires, one originated from the free exciton recombination (ultraviolet emission) and another possibly related to the deep-level emission (visible emission). Furthermore, the nonlinear optical characteristic of the nanowires was studied using picosecond Z-scan technique. The experimental results show that the two and three-photon absorption coefficient of samples were able to be observed. These studies make the promising potential applications of the samples in the development of multifunctional all-optical devices.

  18. Anomalous photoluminescence in InP1−xBix

    PubMed Central

    Wu, Xiaoyan; Chen, Xiren; Pan, Wenwu; Wang, Peng; Zhang, Liyao; Li, Yaoyao; Wang, Hailong; Wang, Kai; Shao, Jun; Wang, Shumin

    2016-01-01

    Low temperature photoluminescence (PL) from InP1−xBix thin films with Bi concentrations in the 0–2.49% range reveals anomalous spectral features with strong and very broad (linewidth of 700 nm) PL signals compared to other bismide alloys. Multiple transitions are observed and their energy levels are found much smaller than the band-gap measured from absorption measurements. These transitions are related to deep levels confirmed by deep level transient spectroscopy, which effectively trap free holes and enhance radiative recombination. The broad luminescence feature is beneficial for making super-luminescence diodes, which can theoretically enhance spatial resolution beyond 1 μm in optical coherent tomography (OCT). PMID:27291823

  19. Enhanced Photoluminescence Property for Quantum Dot-Gold Nanoparticle Hybrid

    NASA Astrophysics Data System (ADS)

    Huang, Qianqian; Chen, Jing; Zhao, Jian; Pan, Jiangyong; Lei, Wei; Zhang, Zichen

    2015-10-01

    In this paper, we have synthesized ZnCdSeS quantum dots (QDs)-gold nanoparticle (Au NPs) hybrids in aqueous solution via bi-functional linker mercaptoacetic acid (MPA). The absorption peaks of ZnCdSeS QDs and Au are both located at 520 nm. It is investigated that PL intensity of QD-Au hybrid can be affected by the amounts of Au and pH value of hybrid solution. The located surface plasmon resonance (LSPR) effect of QD-Au NPs has been demonstrated by increased fluorescence intensity. The phenomenon of fluorescence enhancement can be maximized under the optimized pH value of 8.5. LSPR-enhanced photoluminescence property of QD-Au hybrid will be beneficial for the potential applications in the area of biological imaging and detection.

  20. Enhanced Photoluminescence Property for Quantum Dot-Gold Nanoparticle Hybrid.

    PubMed

    Huang, Qianqian; Chen, Jing; Zhao, Jian; Pan, Jiangyong; Lei, Wei; Zhang, Zichen

    2015-12-01

    In this paper, we have synthesized ZnCdSeS quantum dots (QDs)-gold nanoparticle (Au NPs) hybrids in aqueous solution via bi-functional linker mercaptoacetic acid (MPA). The absorption peaks of ZnCdSeS QDs and Au are both located at 520 nm. It is investigated that PL intensity of QD-Au hybrid can be affected by the amounts of Au and pH value of hybrid solution. The located surface plasmon resonance (LSPR) effect of QD-Au NPs has been demonstrated by increased fluorescence intensity. The phenomenon of fluorescence enhancement can be maximized under the optimized pH value of 8.5. LSPR-enhanced photoluminescence property of QD-Au hybrid will be beneficial for the potential applications in the area of biological imaging and detection. PMID:26471479

  1. Effect of Mg diffusion on photoluminescence spectra of MgZnO/ZnO bi-layers annealed at different temperatures

    NASA Astrophysics Data System (ADS)

    Das, Amit K.; Misra, P.; Ajimsha, R. S.; Bose, A.; Joshi, S. C.; Porwal, S.; Sharma, T. K.; Oak, S. M.; Kukreja, L. M.

    2013-11-01

    MgZnO/ZnO bilayers (Mg concentration of ˜30%) have been grown and subsequently annealed at different temperatures in the range of 600-900 °C with the specific interest of studying the effect of inter-diffusion of Mg on the photoluminescence (PL) properties of the bilayers. The influence of Mg diffusion and material homogenization is evaluated through absorption, PL, and secondary ion mass spectrometry (SIMS) measurements. No appreciable change in the spectral positions is seen either in PL or absorption up to an annealing temperature of 700 °C, which is also supported by SIMS. However at higher annealing temperatures, diffusion of Mg into the ZnO layer is clearly evident in SIMS profile, which results in the red-shift (blue-shift) of spectral positions of MgZnO (ZnO) layer, respectively. Finally, for the sample annealed at 900 °C, the two layers are completely merged providing a single peak at ˜3.60 eV in PL/absorption corresponding to a completely homogenized MgZnO layer. Spectroscopic results are corroborated by the numerical simulations based on a simple theoretical model, which correlates the observed PL spectra of the heterostructures with the experimental Mg diffusion profiles across the heterointerface, as measured by SIMS.

  2. Photoluminescence spectra of CdSe/ZnS quantum dots in solution.

    PubMed

    Ibnaouf, K H; Prasad, Saradh; Hamdan, A; Alsalhi, M; Aldwayyan, A S; Zaman, M B; Masilamani, V

    2014-01-01

    The spectral properties of CdSe/ZnS core-shell quantum dots (QDs) of 3 nm size have been studied under different organic solvents, concentrations and temperatures. Our results showed that the absorption spectra of CdSe/ZnS in benzene have two humps; one around 420 nm and another at 525 nm, with a steady increase in absorption along UV region, and the absorption spectral profile under a wide range of concentrations did not change. On the other hand, the photoluminescence (PL) spectra of CdSe/ZnS in benzene showed two bands one around 375 nm and the other around 550 nm. It could be seen that the band at 375 nm is due to the interaction between the shell (ZnS) with the solvent species in high excited state, and the band at 550 nm is due to core alone (CdSe). PMID:24270709

  3. Photoluminescence of Diamondoid Crystals

    SciTech Connect

    Clay, William; Sasagawa, Takao; Iwasa, Akio; Liu, Zhi; Dahl, Jeremy E.; Carlson, Robert M.K.; Kelly, Michael; Melos, Nicholas; Shen, Zhi-Xun; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab. /SIMES, Stanford

    2012-04-03

    The photoluminescence of diamondoids in the solid state is examined. All of the diamondoids are found to photoluminesce readily with initial excitation wavelengths ranging from 233 nm to 240 nm (5.3 eV). These excitation energies are more than 1 eV lower than any previously studied saturated hydrocarbon material. The emission is found to be heavily shifted from the absorption, with emission wavelengths of roughly 295 nm (4.2 eV) in all cases. In the dissolved state, however, no uorescence is observed for excitation wavelengths as short as 200 nm. We also discuss predictions and measurements of the quantum yield. Our predictions indicate that the maximum yield may be as high as 25%. Our measurement of one species, diamantane, gives a yield of 11%, the highest ever reported for a saturated hydrocarbon, even though it was likely not at the optimal excitation wavelength.

  4. Photoluminescence and lasing properties of MAPbBr3 single crystals grown from solution

    NASA Astrophysics Data System (ADS)

    Aryal, Sandip; Lafalce, Evan; Zhang, Chuang; Zhai, Yaxin; Vardeny, Z. Valy

    Recent studies of solution-grown single crystals of inorganic-organic hybrid lead-trihalide perovskites have suggested that surface traps may play a significant role in their photophysics. We study electron-hole recombination in single crystal MAPbBr3 through such trap states using cw photoluminescence (PL) and ps transient photoinduced absorption (PA) spectroscopies. By varying the depth of the collecting optics we examined the contributions from surface and bulk radiative recombination. We found a surface dominated PL band at the band-edge that is similar to that observed from polycrystalline thin films, as well as a weaker red-shifted emission band that originates from the bulk crystal. The two PL bands are distinguished in their temperature, excitation intensity and polarization dependencies, as well as their ps dynamics. Additionally, amplified spontaneous emission and crystal-related cavity lasing modes were observed in the same spectral range as the PL band assigned to the surface recombination. This work was funded by AFOSR through MURI Grant RA 9550-14-1-0037.

  5. Full-color tunable photoluminescent ionic liquid crystals based on tripodal pyridinium, pyrimidinium, and quinolinium salts.

    PubMed

    Tanabe, Kana; Suzui, Yuko; Hasegawa, Miki; Kato, Takashi

    2012-03-28

    Color-tunable luminescent ionic liquid crystals have been designed as a new series of luminescent materials. To achieve tuning of emission colors, intramolecular charge transfer (ICT) character has been incorporated into tripodal molecules. A series of the compounds has three chromophores in each molecule, incorporated with both electron-donating moieties such as alkylaminobenzene and alkoxybenzene, and electron-accepting moieties such as pyridinium, pyrimidinium, and quinolinium parts. These C(3)-symmetrical molecules self-assemble into liquid-crystalline (LC) columnar (Col) structures over wide temperature ranges through nanosegregation between ionic moieties and nonionic aliphatic chains. Photoluminescent (PL) emissions of these tripodal molecules are observed in the visible region both in the self-assembled condensed states and in solutions. For example, a pyrimidinium salt with didodecylaminobenzene moieties exhibits yellowish orange emission (λ(em) = 586 nm in a thin film). Multicolor PL emissions are successfully achieved by simple tuning of changing electron-donating and electron-accepting moieties of the compounds, covering the visible region from blue-green to red. It has been revealed that ICT processes in the excited states and weak intermolecular interactions play important roles in the determination of the PL properties of the materials, by measurements of UV-vis absorption and emission spectra, fluorescence lifetimes, and PL quantum yields. PMID:22372372

  6. Magnetic field induced extraordinary photoluminescence enhancement in Er{sup 3+}:YVO{sub 4} single crystal

    SciTech Connect

    Zhang, Junpei; Wang, Xia; Tang, Chaoqun; Zhong, Zhiqiang; Ma, Zongwei; Wang, Shaoliang; Han, Yibo; Han, Jun-Bo Li, Liang

    2015-08-28

    A bright green photoluminescence (PL) from {sup 4}S{sub 3∕2} → {sup 4}I{sub 15∕2} emission band in Er{sup 3+}:YVO{sub 4} single crystal has been observed with the excitation of an argon laser at 488.0 nm. More than two orders of PL enhancement have been obtained under the effect of magnetic fields, and the enhancement factor f reaches 170 when the applied magnetic field is 7.7 T under the sample temperature of 4.2 K. Unusually, the PL enhancements only happen at some certain magnetic fields (B{sub c}s), and a decrease of sample temperature will lead to the increase of f and decrease of B{sub c}. The results confirm that this PL enhancement originates from the resonance excitation of the electron transitions induced by the cross of the laser energy and the absorption energy modulated by both the magnetic field and temperature. This special PL enhancement in Er{sup 3+}:YVO{sub 4} single crystal can be applied in the calibration of pulsed high magnetic field, detection of material fine energy structures, and modulation of magneto-optical devices.

  7. Synthesis, characterization and photoluminescence studies of undoped ZnS nanoparticles

    NASA Astrophysics Data System (ADS)

    Chandrakar, Raju Kumar; Baghel, R. N.; Chandra, V. K.; Chandra, B. P.

    2015-08-01

    The present paper reports the synthesis, characterization and photoluminescence studies of undoped ZnS nanoparticles. The ZnS nanoparticles were prepared by chemical precipitation method and characterized by X-ray diffraction (XRD), field emission gun scanning electron microscope (FEGSEM), and high resolution transmission electron microscope (HRTEM). When the concentrations of capping agent (mercaptoethanol) used are 0 M, 0.01 M, 0.025 M, 0.040 M, and 0.060 M, the sizes of the nanoparticles are 2.86 nm, 2.69 nm, 2.40 nm, 1.90 nm and 1.80 nm, respectively. This means the size of nanoparticles decreases with increasing concentration of capping agent used. The PL spectra of ZnS nanoparticles were measured for different concentrations of merceptoethanol, in which the excitation wavelength was 289 nm for all the samples. One peak is obtained in the photoluminescence (PL) of ZnS, in which the peak shifts from 468 nm to 408 nm with decreasing size of the nanocrystals. The blue emission around the peak of PL intensity is very broad and originates from the radiative recombination involving defect states in the ZnS nanocrystals. The photoluminescence spectra of ZnS nanoparticles for different capping agent concentrations reveals that the emission becomes more intensive and shift towards blue side as the size of the nanoparticles is reduced. The optical absorption spectra of the nanoparticles obtained using UV-Vis spectrophotometer shows the blue-shift with decreasing particle size. The value of band gap energy has been found to be in range 4.60-5.18 eV, which is related to the quantization effect due to small the of the particles. The measurement of exciton luminescence can be used to determine the band gap of pure ZnS crystals.

  8. Ga nanoparticle-enhanced photoluminescence of GaAs

    SciTech Connect

    Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H.; Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V.; Katzenstein, A. L.; Sofferman, D. L.; Goldman, R. S.

    2013-09-02

    We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

  9. Strong photoluminescence emission from resonant Fibonacci quantum wells.

    PubMed

    Chang, C H; Chen, C H; Hsueh, W J

    2013-06-17

    Strong photoluminescence (PL) emission from a resonant Fibonacci quantum well (FQW) is demonstrated. The maximum PL intensity in the FQW is significantly stronger than that in a periodic QW under the Bragg or anti-Bragg conditions. Moreover, the peaks of the squared electric field in the FQW are located very near each of the QWs. The optimal PL spectrum in the FQW has an asymmetrical form rather than the symmetrical one in the periodic case. The maximum PL intensity and the corresponding thickness filling factor in the FQW become greater with increasing generation order. PMID:23787654

  10. Nature of room-temperature photoluminescence in ZnO

    SciTech Connect

    Shan, W.; Walukiewicz, W.; Ager III, J.W.; Yu, K.M.; Yuan, H.B.; Xin, H.P.; Cantwell, G.; Song, J.J.

    2004-11-11

    The temperature dependence of the photoluminescence (PL) transitions associated with various excitons and their phonon replicas in high-purity bulk ZnO has been studied at temperatures from 12 K to above room temperature (320 K). Several strong PL emission lines associated with LO phonon replicas of free and bound excitons are clearly observed. The room temperature PL spectrum is dominated by the phonon replicas of the free exciton transition with the maximum at the first LO phonon replica. The results explain the discrepancy between the transition energy of free exciton determined by reflection measurement and the peak position obtained by the PL measurement.

  11. Controllable photoluminescence enhancement of CdTe/CdS quantum dots thin films incorporation with Au nanoparticles

    NASA Astrophysics Data System (ADS)

    Wang, Hongyu; Xu, Ling; Zhang, Renqi; Ge, Zhaoyun; Zhang, Wenping; Xu, Jun; Ma, Zhongyuan; Chen, Kunji

    2015-03-01

    Au nanoparticles (Au NPs)/CdTe/CdS QDs nanocomposite films were fabricated by deposition of Au NPs and layer-by-layer self-assembly of colloidal CdTe/CdS QDs. Photoluminescence (PL) spectra showed that Au NPs incorporation resulted in an increase of PL intensity about 16-fold compared with that of the samples without Au NPs. PL enhancement of Au NPs/CdTe/CdS QDs nanocomposite films can be controlled by tuning the thickness of spacer layer between the metal nanoparticles (MNPs) and QDs. Optical absorption spectra exhibited the incorporation of Au NPs boosted the absorption of Au NPs/CdTe/CdS QDs nanocomposite films. The results of finite-difference time-domain (FDTD) simulation indicated that the increased sizes of Au NPs resulted in stronger localization of electric field, which boosted the PL intensity of QDs in the vicinity of Au NPs. We thought that these were mainly attributed to localized SP enhancement effects of the Au NPs. Our experiment results demonstrated that Au NPs/QDs nanocomposite films would be a promising candidate for optoelectronic devices application.

  12. Probing the Quenching of Quantum Dot Photoluminescence by Peptide-Labeled Ruthenium(II) Complexes

    PubMed Central

    2015-01-01

    Charge transfer processes with semiconductor quantum dots (QDs) have generated much interest for potential utility in energy conversion. Such configurations are generally nonbiological; however, recent studies have shown that a redox-active ruthenium(II)–phenanthroline complex (Ru2+-phen) is particularly efficient at quenching the photoluminescence (PL) of QDs, and this mechanism demonstrates good potential for application as a generalized biosensing detection modality since it is aqueous compatible. Multiple possibilities for charge transfer and/or energy transfer mechanisms exist within this type of assembly, and there is currently a limited understanding of the underlying photophysical processes in such biocomposite systems where nanomaterials are directly interfaced with biomolecules such as proteins. Here, we utilize redox reactions, steady-state absorption, PL spectroscopy, time-resolved PL spectroscopy, and femtosecond transient absorption spectroscopy (FSTA) to investigate PL quenching in biological assemblies of CdSe/ZnS QDs formed with peptide-linked Ru2+-phen. The results reveal that QD quenching requires the Ru2+ oxidation state and is not consistent with Förster resonance energy transfer, strongly supporting a charge transfer mechanism. Further, two colors of CdSe/ZnS core/shell QDs with similar macroscopic optical properties were found to have very different rates of charge transfer quenching, by Ru2+-phen with the key difference between them appearing to be the thickness of their ZnS outer shell. The effect of shell thickness was found to be larger than the effect of increasing distance between the QD and Ru2+-phen when using peptides of increasing persistence length. FSTA and time-resolved upconversion PL results further show that exciton quenching is a rather slow process consistent with other QD conjugate materials that undergo hole transfer. An improved understanding of the QD–Ru2+-phen system can allow for the design of more sophisticated

  13. Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures

    SciTech Connect

    Yablonskiy, A. N. Baidakova, N. A.; Novikov, A. V.; Lobanov, D. N.

    2013-11-15

    The results of a study of the spectral and temporal characteristics of the photoluminescence (PL) from multilayer structures with self-assembled Ge(Si) islands grown on silicon and 'silicon-on-insulator' substrates in relation to temperature and the excitation-light wavelength are presented. A substantial increase in island-related PL intensity is observed for structures with Ge(Si) islands grown on silicon substrates upon an increase in temperature from 4 to 70 K. This increase is due to the diffusion of nonequilibrium carriers from the silicon substrate into the active layer with the islands. In this case, a slow component with a characteristic time of {approx}100 ns appears in the PL rise kinetics. At the same time, no slow component in the PL rise kinetics and no rise in the PL intensity with increasing temperature are observed for structures grown on 'silicon-on-insulator' substrates, in which the active layer with the islands is insulated from the silicon substrate. It is found that absorption of the excitation light in the islands and SiGe wetting layers mainly contributes to the excitation of the PL signal from the islands under sub-bandgap optical pump conditions.

  14. Enhancement of Charge Transfer and Quenching of Photoluminescence of Capped CdS Quantum Dots

    PubMed Central

    Mehata, Mohan Singh

    2015-01-01

    Quantum dots (Q-dots) of cadmium sulfide (CdS) with three different capping ligands, 1-butanethiol (BT), 2-mercaptoethanol (ME) and benzyl mercaptan (BM) have been investigated. An external electric field of variable strength of 0.2–1.0 MV cm−1 was applied to the sample of capped CdS Q-dots doped in a poly(methyl methacrylate) (PMMA) films. Field-induced changes in optical absorption of capped CdS Q-dots were observed in terms of purely the second-derivative of the absorption spectrum (the Stark shift), indicating an enhancement in electric dipole moment following transition to the first exciton state. The enhancement depends on the shape and size of the Q-dots prepared using different capping ligands. Field induced-change in photoluminescence (PL) reveals similar changes, an enhancement in charge-transfer (CT) character in exciton state. PL of capped CdS Q-dots is significantly quenched in presence of external electric field. The strong field-induced quenching occurs as a result of the increased charge separation resulting exciton dissociation. Thus, understanding the CT character and field-induced PL quenching of CdS Q-dots is important for photovoltaic, LEDs and biological applications. PMID:26166553

  15. Photoluminescence, FTIR, and laser-Raman spectroscopic studies of PMN-PT containing iron

    NASA Astrophysics Data System (ADS)

    Bairavarasu, Sundar R.; Edwards, Matthew E.; Kukhtareva, Titania; Sastry, Medury D.; Lianos, Dimitrios; Kommidi, Praveena; Reddy, B. Rami; Janeisch, Holger M.; Aggarwal, Monmohan D.

    2007-09-01

    Lead magnesium niobate-lead titanate, Pb(Mg, Nb)O 3-PbTiO 3 is a piezoelectric, ferroelectric crystal at room temperature with large electromechanical coefficient. The crystals were grown by PbO-B IIO 3 flux method. Typically the crystals were colorless and transparent, but a small fraction of them were Brown/reddish colored and show interesting photoluminescence (PL) properties. The PL studies were conducted under XeCl (308nm) excitation and under Argon Ion (Ar +) laser excitation. The excitation with 308nm gave broad PL centered at 500nm and intense emission at 710nm. The emission at 710nm in colorless crystals is very weak. The excitation with Ar + laser coinciding with electronic absorption in brown samples gave rich and sharp PL particularly with 514.5 nm excitation. The PL with 514.5nm-Ar + laserexcitation, consisted of intense anti stokes emission in addition to intense red and near infrared emission, is a result of photo-transfer optically stimulated luminescence (PT-OSL). This involved electron-hole recombination at photoinduced magnetic polaron site. The PL emissions and the centers identified are the followings: 718nm emission due to magnetic polaron and 360nm emission due to cooperative emission from two polarons, Fe-R line at 660nm due to Fe 3+ coupled to a cation; 380nm and 399nm due to Pb 2+ clusters and Nb 5+ center; 630 and 860 nm due to 6p-->6s transition of Pb 3+ and 760nm due to isolated Fe 3+ ions. Raman spectrum of brown samples revealed the presence of nano particles/wires of orthorhombic β PbO. The FTIR spectrum gives evidence of significant amount of hydroxyl impurity.

  16. Effects of organic moieties on the photoluminescence spectra of perovskite-type tin bromide based compounds

    NASA Astrophysics Data System (ADS)

    Papavassiliou, George C.; Vidali, Maria-Sofia; Pagona, Georgia; Mousdis, George A.; Karousis, Nikolaos; Koutselas, Ioannis

    2015-04-01

    The photoluminescence (PL) and optical absorption (OA) spectra of some compounds of the type (SC)SnBr3, (BC)2SnBr4, and (SC)(BC)2Sn2Br7 (where SC is CH3NH3 + or Cs+; BC is C4H9NH3 + ,CH3C6H4CH2NH3 + ,C12H25NH3 + ,C18H37NH3 + and 1-naphthylmethyl ammonium group), in the forms of thin deposits on several substrates, are investigated. Generally, using the 350 nm as excitation line, the obtained PL spectra of compounds of the type (BC)2SnBr4 with short alkyl chain-length in the alkyl ammonium moiety, show broad and strong bands. For example, the PL spectra of compound (C4H9NH3)2SnBr4 exhibit a weak band at ca 475 nm, attributed to free-excitons and a broad and strong band at ca 570 nm, attributed to radiative decay of self-trapped excitons in the inorganic moiety. This is a bright yellow-orange emission, which can be seen by naked eye, even at room temperature. In the case of the compounds with long alkyl chain-length in the alkyl ammonium moiety, the PL spectra are dominated by an excitonic band, which occurs close to the corresponding fundamental OA edge. The PL spectrum of (1-naphthylmethyl ammonium)2SnBr4 shows the strong red band with main maxima at ca 603 and 642 nm, arising from tetramers of naphthyl moieties. Also, the PL spectra of the compounds of the type (SC)SnBr3 and (SC)(BC)2Sn2Br7, after grinding, show strong bands at 600-620 nm.

  17. Oxygen and relative humidity monitoring with films tailored for enhanced photoluminescence

    DOE PAGESBeta

    Cui, Weipan; Liu, Rui; Manna, Eeshita; Park, Joong -Mok; Fungura, Fadzai; Shinar, Joseph; Shinar, Ruth

    2014-10-31

    In this study, approaches to generate porous or doped sensing films, which significantly enhance the photoluminescence (PL) of oxygen optical sensors, and thus improve the signal-to-noise (S/N) ratio, are presented. Tailored films, which enable monitoring the relative humidity (RH) as well, are also presented. Effective porous structures, in which the O2-sensitive dye Pt octaethylporphyrin (PtOEP) or the Pd analog PdOEP was embedded, were realized by first generating blend films of polyethylene glycol (PEG) with polystyrene (PS) or with ethyl cellulose (EC), and then immersing the dried films in water to remove the water-soluble PEG. This approach creates pores (voids) inmore » the sensing films. The dielectric contrast between the films’ constituents and the voids increases photon scattering, which in turn increases the optical path of the excitation light within the film, and hence light absorption by the dye, and its PL. Optimized sensing films with a PEG:PS ratio of 1:4 (PEG’s molecular weight Mw ~8000) led to ~4.4× enhancement in the PL (in comparison to PS films). Lower Mw ~200 PEG with a PEG:EC ratio of 1:1 led to a PL enhancement of ~4.7×. Film-dependent PL enhancements were observed at all oxygen concentrations. The strong PL enhancement enables (i) using lower dye (luminophore) concentrations, (ii) reducing power consumption and enhancing the sensor’s operational lifetime when using organic light emitting diodes (OLEDs) as excitation sources, (iii) improving performance when using compact photodetectors with no internal gain, and (iv) reliably extending the dynamic range.« less

  18. Oxygen and relative humidity monitoring with films tailored for enhanced photoluminescence

    SciTech Connect

    Cui, Weipan; Liu, Rui; Manna, Eeshita; Park, Joong -Mok; Fungura, Fadzai; Shinar, Joseph; Shinar, Ruth

    2014-10-31

    In this study, approaches to generate porous or doped sensing films, which significantly enhance the photoluminescence (PL) of oxygen optical sensors, and thus improve the signal-to-noise (S/N) ratio, are presented. Tailored films, which enable monitoring the relative humidity (RH) as well, are also presented. Effective porous structures, in which the O2-sensitive dye Pt octaethylporphyrin (PtOEP) or the Pd analog PdOEP was embedded, were realized by first generating blend films of polyethylene glycol (PEG) with polystyrene (PS) or with ethyl cellulose (EC), and then immersing the dried films in water to remove the water-soluble PEG. This approach creates pores (voids) in the sensing films. The dielectric contrast between the films’ constituents and the voids increases photon scattering, which in turn increases the optical path of the excitation light within the film, and hence light absorption by the dye, and its PL. Optimized sensing films with a PEG:PS ratio of 1:4 (PEG’s molecular weight Mw ~8000) led to ~4.4× enhancement in the PL (in comparison to PS films). Lower Mw ~200 PEG with a PEG:EC ratio of 1:1 led to a PL enhancement of ~4.7×. Film-dependent PL enhancements were observed at all oxygen concentrations. The strong PL enhancement enables (i) using lower dye (luminophore) concentrations, (ii) reducing power consumption and enhancing the sensor’s operational lifetime when using organic light emitting diodes (OLEDs) as excitation sources, (iii) improving performance when using compact photodetectors with no internal gain, and (iv) reliably extending the dynamic range.

  19. Detailed photoluminescence studies of thin film Cu{sub 2}S for determination of quasi-Fermi level splitting and defect levels

    SciTech Connect

    Sträter, H. Brüggemann, R.; Bauer, G. H.; Siol, S.; Klein, A.; Jaegermann, W.

    2013-12-21

    We have studied chalcocite (Cu{sub 2}S) layers prepared by physical vapor deposition with varying deposition parameters by calibrated spectral photoluminescence (PL) and by confocal PL with lateral resolution of Δ x≈0.9 μm. Calibrated PL experiments as a function of temperature T and excitation fluxes were performed to obtain the absolute PL-yield and to calculate the splitting of the quasi-Fermi levels (QFLs) μ=E{sub f,n}−E{sub f,p} at an excitation flux equivalent to the AM 1.5 spectrum and the absorption coefficient α(ℏω), both in the temperature range of 20 K≤T≤400 K. The PL-spectra reveal two peaks at E{sub #1}=1.17 eV and E{sub #2}=1.3 eV. The samples show a QFL-splitting of μ>700 meV associated with a pseudo band gap of E{sub g}=1.25 eV. The high-energy peak shows an unexpected temperature behavior, namely, an increase of PL-yield with rising temperature at variance with the behavior of QFL-splitting that decreases with rising T. Our observations indicate that, contrary to common believe, it is not the PL-yield, but rather the QFL-splitting that is the comprehensive indicator of the quality of the excited state in an illuminated semiconductor. A further examination of the lateral variation of opto-electronic properties by confocal PL and the surface contour shows no detectable correlation between Cu{sub 2}S grains/grain boundaries and the PL-yield or QFL-splitting.

  20. Effects of thermal annealing on photoluminescence spectra in π-conjugated polymer film: evidence for dual emission by temperature dependent measurements

    NASA Astrophysics Data System (ADS)

    Wang, R. Z.; Yang, X.; Wang, Y. C.; Sheng, C.-X.; Chen, Q.

    2014-09-01

    Various spectroscopy techniques such as absorption, photoluminescence and photoinduced absorption (PIA) spectroscopy, were used to study the photophysics in poly [2-methoxy-5-(20-ethyl-hexyloxy)-1, 4-phenylenevinylene] (MEH-PPV) films, which were dropped cast on glass substrates using its toluene solution and being annealed at various temperatures. With the analysis of temperature dependence PL intensities, we conclude that PL emission around 680 nm at low temperature is due to intertain excimers instead of intrachain excitons for 450 K annealed film. On the other hand, this relative intensity difference is much smaller in both unannealed and 500 K annealed films, in which the morphology is amorphous and microcrystalline, respectively. We conclude that the interchain photoexcitations play crucial roles in the photophysics of MEH-PPV films. The further measurements on PIA spectrum of MEH-PPV films suggest that the interchain photoexciation is also important for the generation of triplet excitons.

  1. On the relationship between radiation-stimulated photoluminescence and nitrogen atoms in p-4 H-SiC

    NASA Astrophysics Data System (ADS)

    Lebedev, A. A.; Ber, B. Ya.; Bogdanova, E. V.; Seredova, N. V.; Kazantsev, D. Yu.; Kozlovski, V. V.

    2015-12-01

    Photoluminescence (PL) appearing in p-4 H-SiC upon its electron irradiation has been studied. A model that accounts for the dependence of the PL intensity on the irradiation dose is suggested. The conclusion is drawn that nitrogen-radiation defect donor-acceptor pairs are PL activators.

  2. Photoluminescence by Interstellar Dust

    NASA Astrophysics Data System (ADS)

    Vijh, U. P.

    2005-12-01

    In this dissertation talk, I will report on our study of interstellar dust through the process of photoluminescence (PL). We present the discovery of a new band of dust PL, blue luminescence (BL) with λ peak ˜ 370 nm in the proto-planetary nebula known as the Red Rectangle (RR). We attribute this to fluorescence by small, 3-4-ringed polycyclic aromatic hydrocarbon (PAH) molecules. Further analysis reveals additional independent evidence for the presence of small PAHs in this nebula. Detection of BL using long-slit spectroscopic observations in other ordinary reflection nebulae suggests that the BL carrier is an ubiquitous component of the ISM and is not restricted to the particular environment of the RR. We present the spatial distribution of the BL in these nebulae and find that the BL is spatially correlated with IR emission structures attributed to aromatic emission features (AEFs), attributed to PAHs. The carrier of the dust-associated photoluminescence process causing the extended red emission (ERE), known now for over twenty five years, remains unidentified. We constrain the character of the ERE carrier by determining the wavelengths of the radiation that initiates the ERE -- λ < 118 nm. We note that under interstellar conditions most PAH molecules are ionized to the di-cation stage by photons with E > 10.5 eV and that the electronic energy level structure of PAH di-cations is consistent with fluorescence in the wavelength band of the ERE. I will also present first results from ongoing work: Using narrow-band imaging, we present the optical detection of the circum-binary disk of the RR in the light of the BL, and show that the morphology of the BL and ERE emissions in the RR nebula are almost mutually exclusive. It is very suggestive to attribute them to different ionization stages of the same family of carriers such as PAH molecules. Financial support for this study was provided through NSF Grant AST0307307 to The University of Toledo.

  3. Photoluminescence by Interstellar Dust

    NASA Astrophysics Data System (ADS)

    Vijh, U. P.

    2005-08-01

    In this dissertation, we report on our study of interstellar dust through the process of photoluminescence (PL). We present the discovery of a new band of dust PL, blue luminescence (BL) with λpeak˜370 nm in the proto-planetary nebula known as the Red Rectangle (RR). We attribute this to fluorescence by small, 3-4-ringed polycyclic aromatic hydrocarbon (PAH) molecules. Further analysis reveals additional independent evidence for the presence of small PAHs in this nebula. Detection of BL using long-slit spectroscopic observations in other ordinary reflection nebulae suggests that the BL carrier is an ubiquitous component of the ISM and is not restricted to the particular environment of the RR. We present the spatial distribution of the BL in these nebulae and find that the BL is spatially correlated with IR emission structures attributed to aromatic emission features (AEFs), attributed to PAHs. The carrier of the dust-associated photoluminescence process causing the extended red emission (ERE), known now for over twenty five years, remains unidentified. We constrain the character of the ERE carrier by determining the wavelengths of the radiation that initiates the ERE -- λ < 118 nm. We note that under interstellar conditions most PAH molecules are ionized to the di-cation stage by photons with E > 10.5 eV and that the electronic energy level structure of PAH di-cations is consistent with fluorescence in the wavelength band of the ERE. In the last few chapters of the dissertation we present first results from ongoing work: i) Using narrow-band imaging, we present the optical detection of the circum-binary disk of the RR in the light of the BL, and show that the morphology of the BL and ERE emissions in the RR nebula are almost mutually exclusive. It is very suggestive to attribute them to different ionization stages of the same family of carriers such as PAH molecules. ii) We also present a pure spectrum of the BL free of scattered light, resolved into seven

  4. Investigations on optoelectronic transition mechanisms of silicon nanoporous pillar array by using surface photovoltage spectroscopy and photoluminescence spectroscopy

    NASA Astrophysics Data System (ADS)

    Hu, Zhen-Gang; Tian, Yong-Tao; Li, Xin-Jian

    2014-03-01

    We report the electronic transition mechanisms for hydrothermally prepared silicon nanoporous pillar array (Si-NPA), investigated by surface photovoltage (SPV) spectroscopy and photoluminescence (PL) spectroscopy. By comparing the SPV spectra of single crystal silicon (sc-Si) with that of Si-NPA, the silicon nano-crystallites (nc-Si)/SiOx nanostructure in the Si-NPA could produce SPV in the wavelength range of 300-580 nm. And 580 nm (˜2.14 eV) was considered as the absorption edge of the nc-Si/SiOx nanostructure. After the sample was annealed and oxidized in air at different temperatures, both the SPV in the wavelength range of 300-580 nm and the PL emission band around 690 nm from the nc-Si/SiOx nanostructure weakened and disappeared as the annealing temperature increased from 100 to 500 °C. But both the red-infrared PL band (>710 nm) and the violet-blue PL band were enhanced by increasing the annealing temperature. After 2 years of natural oxidation in air, the SPV features for sc-Si disappeared completely, and the SPV characteristics of the nc-Si/SiOx nanostructure could be clearly observed. After analysis, the Si-O structure related localized states at the nc-Si/SiOx interface dominated the electronic transitions during the red PL emission and the SPV for the nc-Si/SiOx nanostructure in Si-NPA, the red-infrared PL was due to the Si=O structure related electronic transitions, and the violet-blue PL emission could attribute to the oxygen-related defect related recombination of the photo induced carriers.

  5. Photoluminescence emission at room temperature in zinc oxide nano-columns

    SciTech Connect

    Rocha, L.S.R.; Deus, R.C.; Foschini, C.R.; Simões, A.Z.

    2014-02-01

    Highlights: • ZnO nanoparticles were obtained by microwave-hydrothermal method. • X-ray diffraction reveals a hexagonal structure. • Photoluminescence emission evidenced two absorption peaks, at around 480 nm and 590 nm wavelengths. - Abstract: Hydrothermal microwave method (HTMW) was used to synthesize crystalline zinc oxide (ZnO) nano-columns at the temperature of 120 °C with a soaking time of 8 min. ZnO nano-columns were characterized by using X-ray analyses (XRD), infrared spectroscopy (FT-IR), thermogravimetric analyses (TG-DTA), field emission gun and transmission electron microscopy (FEG-SEM and TEM) and photoluminescence properties (PL). XRD results indicated that the ZnO nano-columns are free of any impurity phase and crystallize in the hexagonal structure. Typical FT-IR spectra for ZnO nano-columns presented well defined bands, indicating a substantial short-range order in the system. PL spectra consist of a broad band at 590 nm and narrow band at 480 nm corresponding to a near-band edge emission related to the recombination of excitons and level emission related to structural defects. These results show that the HTMW synthesis route is rapid, cost effective, and could be used as an alternative to obtain ZnO nano-columns in the temperature of 120 °C for 8 min.

  6. Effect of Ag/Au bilayer assisted etching on the strongly enhanced photoluminescence and visible light photocatalysis by Si nanowire arrays.

    PubMed

    Ghosh, Ramesh; Imakita, Kenji; Fujii, Minoru; Giri, P K

    2016-03-01

    We report on the strongly enhanced photoluminescence (PL) and visible light photocatalysis by arrays of vertically aligned single crystalline Si nanowires (NWs) grown by Ag/Au bilayer assisted etching. High resolution FESEM and TEM imaging reveals that the Si NWs are decorated with ultra-small size arbitrary shaped Si nanocrystals (NCs) due to the lateral etching of the NWs. A strong broad band and tunable visible to near-infrared (NIR) photoluminescence (PL) in the range 1.3-2.4 eV are observed for these Si NWs/NCs at room temperature, depending on the etching conditions. Our studies reveal that the visible-NIR PL intensity is about two orders of magnitude higher and it exhibits faster decay dynamics in the bilayer assisted etching case as compared to the Ag or Au single layer etching case. The enhanced PL in the bimetal case is attributed to the longer length and higher density of the Si NWs/NCs, surface plasmon resonance enhanced absorption by residual bimetal NPs and the enhanced radiative recombination rate. Studies on the time evolution of PL spectral features with laser exposure under ambient conditions and laser power dependence reveal that both the quantum confinement of carriers in Si NCs and the nonbridging oxygen hole defects in the SiOx layer contribute to the tunable PL. Interestingly, Si NWs grown by Ag/Au bilayer assisted etching exhibit enhanced photocatalytic degradation of methylene blue in comparison to Si NWs grown by single layer Ag or Au assisted etching. The Schottky barrier present between bimetallic NPs and nanoporous Si NWs with Si-H bonds facilitates the photocatalytic activity by efficient separation of photogenerated e-h pairs. Our results demonstrate the superiority of the Si NW array grown by bilayer assisted etching for their cutting edge applications in optoelectronics and environmental cleaning. PMID:26907170

  7. Hydrogenation of the Cu{sub PL} center in silicon

    SciTech Connect

    Yarykin, Nikolai; Weber, Jörg

    2014-07-07

    The Cu{sub PL} center, a complex of four copper atoms in silicon with the zero-phonon photoluminescence line at 1014 meV and the donor level at 0.1 eV above the top of the valence band, is studied in the process of hydrogenation at 380 K. Complexes of a substitutional copper atom (Cu{sub s}) with one and two hydrogen atoms are observed to form in the hydrogenated region at the expense of Cu{sub PL}, while no isolated Cu{sub s} atoms are detected. Our results indicate that the addition of a single hydrogen atom induces the dissociation of all interstitial Cu atoms which decorate the Cu{sub s} core of the Cu{sub PL} center.

  8. Oxygen and relative humidity monitoring with films tailored for enhanced photoluminescence.

    PubMed

    Cui, Weipan; Liu, Rui; Manna, Eeshita; Park, Joong-Mok; Fungura, Fadzai; Shinar, Joseph; Shinar, Ruth

    2015-01-01

    Approaches to generate porous or doped sensing films, which significantly enhance the photoluminescence (PL) of oxygen optical sensors, and thus improve the signal-to-noise (S/N) ratio, are presented. Tailored films, which enable monitoring the relative humidity (RH) as well, are also presented. Effective porous structures, in which the O2-sensitive dye Pt octaethylporphyrin (PtOEP) or the Pd analog PdOEP was embedded, were realized by first generating blend films of polyethylene glycol (PEG) with polystyrene (PS) or with ethyl cellulose (EC), and then immersing the dried films in water to remove the water-soluble PEG. This approach creates pores (voids) in the sensing films. The dielectric contrast between the films' constituents and the voids increases photon scattering, which in turn increases the optical path of the excitation light within the film, and hence light absorption by the dye, and its PL. Optimized sensing films with a PEG:PS ratio of 1:4 (PEG's molecular weight Mw ∼8000) led to ∼4.4× enhancement in the PL (in comparison to PS films). Lower Mw ∼200 PEG with a PEG:EC ratio of 1:1 led to a PL enhancement of ∼4.7×. Film-dependent PL enhancements were observed at all oxygen concentrations. The strong PL enhancement enables (i) using lower dye (luminophore) concentrations, (ii) reducing power consumption and enhancing the sensor's operational lifetime when using organic light emitting diodes (OLEDs) as excitation sources, (iii) improving performance when using compact photodetectors with no internal gain, and (iv) reliably extending the dynamic range. The effect of RH on O2 sensing is also presented. Dye:EC films are sensitive to the RH, as shown by the change of the dye's PL decay time with RH at a given O2 concentration. Surprisingly, this RH sensitivity vanishes by adding PEG to EC, including by washing PEG off. In contrast, doping EC with TiO2 nanoparticles maintains the RH effect with the advantage of significant PL enhancement. This

  9. Effect of Water Adsorption on the Photoluminescence of Silicon Quantum Dots.

    PubMed

    Yang, Jinrong; Fang, Haiping; Gao, Yi

    2016-05-19

    The optical properties of silicon quantum dots (Si QDs) are strongly influenced by circumjacent surface-adsorbed molecules, which would highly affect their applications; however, water, as the ubiquitous environment, has not received enough attention yet. We employed the time-dependent density functional calculations to investigate the water effect of photoluminescence (PL) spectra for Si QDs. In contrast with the absorption spectra, PL spectra exhibit distinct characteristics. For Si32H38, PL presents the single maximum in the dry and humid environment, while the emission spectrum displays a dual-band fluorescence spectroscopy in the low-humidity environment. This phenomenon is also observed in the larger Si QDs. The distinct character in spectroscopy is dominated by the stretching of the Si-Si bond, which could be explained by the self-trapped exciton model. Our results shed light on the Si-water interaction that is important for the development of optical devices based on Si-coated surfaces. PMID:27117881

  10. Origin of blue photoluminescence from colloidal silicon nanocrystals fabricated by femtosecond laser ablation in solution

    NASA Astrophysics Data System (ADS)

    Hao, H. L.; Wu, W. S.; Zhang, Y.; Wu, L. K.; Shen, W. Z.

    2016-08-01

    We present a detailed investigation into the origin of blue emission from colloidal silicon (Si) nanocrystals (NCs) fabricated by femtosecond laser ablation of Si powder in 1-hexene. High resolution transmission electron microscopy and Raman spectroscopy observations confirm that Si NCs with average size 2.7 nm are produced and well dispersed in 1-hexene. Fourier transform infrared spectrum and x-ray photoelectron spectra have been employed to reveal the passivation of Si NCs surfaces with organic molecules. On the basis of the structural characterization, UV–visible absorption, temperature-dependent photoluminescence (PL), time-resolved PL, and PL excitation spectra investigations, we deduce that room-temperature blue luminescence from colloidal Si NCs originates from the following two processes: (i) under illumination, excitons first form within colloidal Si NCs by direct transition at the X or Γ (Γ25 → Γ‧2) point; (ii) and then some trapped excitons migrate to the surfaces of colloidal Si NCs and further recombine via the surface states associated with the Si–C or Si–C–H2 bonds.

  11. Origin of blue photoluminescence from colloidal silicon nanocrystals fabricated by femtosecond laser ablation in solution.

    PubMed

    Hao, H L; Wu, W S; Zhang, Y; Wu, L K; Shen, W Z

    2016-08-12

    We present a detailed investigation into the origin of blue emission from colloidal silicon (Si) nanocrystals (NCs) fabricated by femtosecond laser ablation of Si powder in 1-hexene. High resolution transmission electron microscopy and Raman spectroscopy observations confirm that Si NCs with average size 2.7 nm are produced and well dispersed in 1-hexene. Fourier transform infrared spectrum and x-ray photoelectron spectra have been employed to reveal the passivation of Si NCs surfaces with organic molecules. On the basis of the structural characterization, UV-visible absorption, temperature-dependent photoluminescence (PL), time-resolved PL, and PL excitation spectra investigations, we deduce that room-temperature blue luminescence from colloidal Si NCs originates from the following two processes: (i) under illumination, excitons first form within colloidal Si NCs by direct transition at the X or Γ (Γ25 → Γ'2) point; (ii) and then some trapped excitons migrate to the surfaces of colloidal Si NCs and further recombine via the surface states associated with the Si-C or Si-C-H2 bonds. PMID:27348227

  12. Surface plasmon resonance induced Er3+ photoluminescence enhancement in tellurite glass

    NASA Astrophysics Data System (ADS)

    Fares, Hssen; Elhouichet, Habib; Gelloz, Bernard; Férid, Mokhtar

    2015-05-01

    The melt quenching method is used to prepare tellurite glasses co-activated with erbium ions and silver nanoparticles (Ag NPs). The glass samples are characterized by x-ray diffraction, UV-vis-NIR absorption, transmission electron microscopy (TEM) imaging, and photoluminescence spectroscopy. The XRD pattern shows no sharp peak indicating an amorphous nature of the glasses. The presence of Ag NPs is confirmed from TEM micrograph. The absorption spectra reveal not only the peaks due to Er3+ ions, but also the surface plasmon resonance band of silver NPs in the 510-535 nm range. The J-O model has been applied to the room temperature absorption intensities of Er3+ (4f11) transitions to establish the so-called J-O intensity parameters: Ω2, Ω4, and Ω6. The intensity parameters are used to determine the radiative decay rates (emission probabilities of transitions) and branching ratios of the Er3+ transitions from the excited state J manifolds to the lower-lying J' manifolds. Intensified of 1.53 μm band is obtained for the sample containing 0.5 mol. % of AgNO3 (Ag0.5 glass) using for excitation a laser operating at 980 nm. The simultaneous influence of the Ag NPs → Er3+ energy transfer and the contribution of the intensified local field effect due to the silver NPs give origin to the enhancement of both the Photoluminescence (PL) intensity and the PL lifetime relative to the 4I13/2 → 4I15/2 transition, whereas the quenching is ascribed to the energy transfer from Er3+ ions to silver NPs. Based on the analysis of the temperature dependence of the PL intensity and decay time, we identified a weak back transfer process from Er to the glass host that makes the quenching of the PL intensity weak. Large magnitudes of calculated emission cross-section (σe), effective bandwidth (Δλeff), and bandwidth quality factor (FWHM × σe) relatives to 4I13/2 → 4I15/2 transition in Er doped Ag0.5 glass have been shown. They indicate that this glass sample has good prospect as a

  13. Surface plasmon resonance induced Er{sup 3+} photoluminescence enhancement in tellurite glass

    SciTech Connect

    Fares, Hssen Férid, Mokhtar; Elhouichet, Habib; Gelloz, Bernard

    2015-05-21

    The melt quenching method is used to prepare tellurite glasses co-activated with erbium ions and silver nanoparticles (Ag NPs). The glass samples are characterized by x-ray diffraction, UV-vis-NIR absorption, transmission electron microscopy (TEM) imaging, and photoluminescence spectroscopy. The XRD pattern shows no sharp peak indicating an amorphous nature of the glasses. The presence of Ag NPs is confirmed from TEM micrograph. The absorption spectra reveal not only the peaks due to Er{sup 3+} ions, but also the surface plasmon resonance band of silver NPs in the 510–535 nm range. The J-O model has been applied to the room temperature absorption intensities of Er{sup 3+} (4f{sup 11}) transitions to establish the so-called J-O intensity parameters: Ω{sub 2}, Ω{sub 4}, and Ω{sub 6}. The intensity parameters are used to determine the radiative decay rates (emission probabilities of transitions) and branching ratios of the Er{sup 3+} transitions from the excited state J manifolds to the lower-lying J' manifolds. Intensified of 1.53 μm band is obtained for the sample containing 0.5 mol. % of AgNO{sub 3} (Ag0.5 glass) using for excitation a laser operating at 980 nm. The simultaneous influence of the Ag NPs → Er{sup 3+} energy transfer and the contribution of the intensified local field effect due to the silver NPs give origin to the enhancement of both the Photoluminescence (PL) intensity and the PL lifetime relative to the {sup 4}I{sub 13/2} → {sup 4}I{sub 15/2} transition, whereas the quenching is ascribed to the energy transfer from Er{sup 3+} ions to silver NPs. Based on the analysis of the temperature dependence of the PL intensity and decay time, we identified a weak back transfer process from Er to the glass host that makes the quenching of the PL intensity weak. Large magnitudes of calculated emission cross-section (σ{sub e}), effective bandwidth (Δλ{sub eff}), and bandwidth quality factor (FWHM × σ{sub e}) relatives to {sup 4}I{sub 13

  14. Influence of cysteine doping on photoluminescence intensity from semiconducting single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Kurnosov, N. V.; Leontiev, V. S.; Linnik, A. S.; Karachevtsev, V. A.

    2015-03-01

    Photoluminescence (PL) from semiconducting single-walled carbon nanotubes can be applied for detection of cysteine. It is shown that cysteine doping (from 10-8 to 10-3 M) into aqueous suspension of nanotubes with adsorbed DNA leads to increase of PL intensity. The PL intensity was enhanced by 27% at 10-3 M cysteine concentration in suspension. Most likely, the PL intensity increases due to the passivation of p-defects on the nanotube by the cysteine containing reactive thiol group. The effect of doping with other amino acids without this group (methionine, serine, aspartic acid, lysine, proline) on the PL intensity is essentially weaker.

  15. Photochemical doping of graphene oxide with nitrogen for photoluminescence enhancement

    NASA Astrophysics Data System (ADS)

    Liu, Fuchi; Tang, Nujiang; Tang, Tao; Liu, Yuan; Feng, Qian; Zhong, Wei; Du, Youwei

    2013-09-01

    Nitrogen-doped graphene oxide (NGO) was synthesized by irradiation of graphene oxide (GO) in NH3 atmosphere. NGO obtained by irradiation of GO for 10 min has high N content of 13.62 at. %. The photoluminescence (PL) properties of NGO were investigated. The results showed that compared with GO, NGO exhibits significant PL enhancement with a high enhancement ratio of approximately 1501.57%. It may attribute to the high content of amino-like N, which can effectively enhance PL of GO because of the amino conjugation effect.

  16. Photochemical doping of graphene oxide with nitrogen for photoluminescence enhancement

    SciTech Connect

    Liu, Fuchi; Tang, Nujiang; Tang, Tao; Liu, Yuan; Feng, Qian; Zhong, Wei; Du, Youwei

    2013-09-16

    Nitrogen-doped graphene oxide (NGO) was synthesized by irradiation of graphene oxide (GO) in NH{sub 3} atmosphere. NGO obtained by irradiation of GO for 10 min has high N content of 13.62 at. %. The photoluminescence (PL) properties of NGO were investigated. The results showed that compared with GO, NGO exhibits significant PL enhancement with a high enhancement ratio of approximately 1501.57%. It may attribute to the high content of amino-like N, which can effectively enhance PL of GO because of the amino conjugation effect.

  17. Spatially resolved photoluminescence study of single ZnO tetrapods.

    PubMed

    Feng, L; Cheng, C; Lei, M; Wang, N; Loy, M M T

    2008-10-01

    ZnO tetrapods and nanowires were fabricated by a simple method of thermal evaporation of pure Zn powder in the air. These nanostructures, formed in different temperature regions of the same apparatus, displayed distinct photoluminescence (PL) characteristics. Spatially resolved PL measurements on legs of individual tetrapods show that the green luminescence (GL) decreases with decreasing leg diameter, and there was no detectable GL from nanowires grown simultaneously. These PL properties suggest that the green luminescence may not come from surface states, but rather from bulk defects. PMID:21832631

  18. Photoluminescence of Au - formed in 12CaO · 7Al 2O 3 single crystal by Au +-implantation

    NASA Astrophysics Data System (ADS)

    Miyakawa, M.; Kamioka, H.; Hirano, M.; Kamiya, T.; Hosono, H.

    2006-09-01

    Au + ion implantation with fluences from 1 × 10 14 to 3 × 10 16 cm -2 into 12CaO · 7Al 2O 3 (C12A7) single crystals was carried out at a sample temperature of 600 °C. The implanted sample with the fluence of 1 × 10 15 cm -2 exhibited photoluminescence (PL) bands peaking at ˜3.1 and ˜2.3 eV at ⩽150 K when excited by He-Cd laser (325 nm). This was the first observation of PL from C12A7. These two PL bands are possibly due to intra-ionic transitions of an Au - ion having the electronic configuration of 6 s2, judged from their similarities to those reported on Au - ions in alkali halides. However, when the concentration of the implanted Au ions exceeded the theoretical maximum value of anions encaged in C12A7 (˜2.3 × 10 21 cm -3), surface plasmon absorption appeared in the optical absorption spectrum, suggesting Au colloids were formed at such high fluences. These observations indicate that negative gold ions are formed in the cages of C12A7 by the Au + implantation if an appropriate fluence is chosen.

  19. Effect of doping of calcium fluoride nanoparticles on the photoluminescence properties of europium complexes with benzoic acid derivatives as secondary ligands and 2-aminopyridine as primary ligand

    NASA Astrophysics Data System (ADS)

    Sharma, Garima; Narula, Anudeep Kumar

    2015-08-01

    The present article reports the synthesis of three Eu(III) complexes [Eu(BA)3(2-ap)] (1), [Eu(HBA)3(2-ap)] (2) and [Eu(ABA)3(2-ap)] (3) (BA = benzoic acid, HBA = 2-hydroxy benzoic acid, ABA = 2-amino benzoic acid and 2-ap = 2-aminopyridine) carried out in ethanol solution. The complexes were further doped with CaF2 nanoparticles and a change in the photoluminescence properties was observed. The compositions and structural investigation of the complexes were determined by elemental analysis and Fourier transform infrared spectroscopy (FTIR) which suggest the coordination of ligands with the central Eu(III) ion. The optical properties of the complexes were studied by Ultraviolet Visible absorption spectroscopy (UV-Vis) and photoluminescence studies (PL). The relative PL intensity was enhanced in the Eu(III) complexes doped with CaF2 nanoparticles as compared to the pure Eu(III) complexes, however the increase in intensity varied in the order of ligands ABA > HBA > BA. The photoluminescence lifetime decay curves also revealed the longer lifetime (τ) and higher quantum efficiency (η) for europium complexes with ABA ligands suggesting the efficient energy transfer and better sensitizing ability of the ligand to europium ion. The morphology of the synthesized compounds were studied by Scanning Electron Microscopy (SEM) revealing spherical morphology with agglomeration of the nanoparticles.

  20. Tuning photoluminescence of reduced graphene oxide quantum dots from blue to purple

    SciTech Connect

    Liu, Fuchi; Tang, Tao; Feng, Qian; Li, Ming; Liu, Yuan; Tang, Nujiang Zhong, Wei; Du, Youwei

    2014-04-28

    Reduced graphene oxide quantum dots (rGOQDs) were synthesized by annealing GOQDs in H{sub 2} atmosphere. The photoluminescence (PL) properties of GOQDs and the rGOQDs samples were investigated. The results showed that compared to GOQDs, a blue to purple tunable PL of rGOQDs can be obtained by regulating the annealing temperature. The increase fraction of the newly formed isolated sp{sup 2} clusters may be responsible for the observed tunable PL.

  1. The emission wavelength dependent photoluminescence lifetime of the N-doped graphene quantum dots

    SciTech Connect

    Deng, Xingxia; Sun, Jing; Yang, Siwei; Ding, Guqiao; Shen, Hao; Zhou, Wei; Lu, Jian; Wang, Zhongyang

    2015-12-14

    Aromatic nitrogen doped graphene quantum dots were investigated by steady-state and time-resolved photoluminescence (PL) techniques. The PL lifetime was found to be dependent on the emission wavelength and coincident with the PL spectrum, which is different from most semiconductor quantum dots and fluorescent dyes. This result shows the synergy and competition between the quantum confinement effect and edge functional groups, which may have the potential to guide the synthesis and expand the applications of graphene quantum dots.

  2. Tunable photoluminescence of monolayer MoS₂ via chemical doping.

    PubMed

    Mouri, Shinichiro; Miyauchi, Yuhei; Matsuda, Kazunari

    2013-01-01

    We demonstrate the tunability of the photoluminescence (PL) properties of monolayer (1L)-MoS2 via chemical doping. The PL intensity of 1L-MoS2 was drastically enhanced by the adsorption of p-type dopants with high electron affinity but reduced by the adsorption of n-type dopants. This PL modulation results from switching between exciton PL and trion PL depending on carrier density in 1L-MoS2. Achievement of the extraction and injection of carriers in 1L-MoS2 by this solution-based chemical doping method enables convenient control of optical and electrical properties of atomically thin MoS2. PMID:24215567

  3. Photoconductivity and photoluminescence of ZnO nanoparticles synthesized via co-precipitation method.

    PubMed

    Kripal, Ram; Gupta, Atul K; Srivastava, Rajneesh K; Mishra, Sheo K

    2011-09-01

    Photoconductivity and photoluminescence studies of ZnO nanoparticles (NPs) synthesized by co-precipitation method capped with thioglycerol are carried out. The effect of annealing at 300°C is also studied. The transmission electron micrograph (TEM) and X-ray diffraction (XRD) pattern confirm the hexagonal wurtzite structure of ZnO nanoparticles. The UV-vis absorption spectrum of ZnO NPs shows blue shift of absorption peak as compared to bulk ZnO. The photoluminescence (PL) spectra of as-synthesized ZnO NPs show band edge emission as well as blue-green emission. After annealing band edge emission is quenched. Photocurrent is found to vary super linearly at high voltage for both as-synthesized as well as annealed ZnO NPs. Time resolved rise and decay photocurrent spectra are found to exhibit anomalous photoconductivity for as-synthesized as well as annealed ZnO NPs wherein the photocurrent decreases even during steady illumination. PMID:21697003

  4. Synthesis and photoluminescence of gallium oxide ultra-long nanowires and thin nanosheets

    NASA Astrophysics Data System (ADS)

    Xiang, Xu; Cao, Chuan-Bao; Zhu, He-Sun

    2005-05-01

    β-Ga 2O 3 long nanowires and thin nanosheets have been successfully synthesized on a large scale through simple thermal evaporation of Ga/Ga 2O 3 mixture powders in the presence of Au catalyst. The as-synthesized products were investigated by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), energy dispersive X-ray spectroscopy (EDS), room-temperature photoluminescence (PL) and optical absorbance. The diameters and lengths of Ga 2O 3 nanowires range from 30-50nm and 60-80 μm in lengths. The nanosheets have thickness of 10-20 nm and lengths up to 20 μm. The SAED and HRTEM observations suggest that both nanowires and nanosheets are single crystalline and free from defects. However, different interplanar spacings were observed for nanowires and nanosheets, indicating the different growth pattern of these two structures. The PL spectrum of β-Ga 2O 3 nanostructures exhibits a broad, strong blue emission band centered at 465 nm. The optical absorption spectrum shows intensive absorption feature in the UV spectral region. The possible growth mechanism of β-Ga 2O 3 nanostructures was also discussed.

  5. Photoluminescence of Eu³⁺-doped glasses with Cu²⁺ impurities.

    PubMed

    Jiménez, José A

    2015-06-15

    Glasses activated with Eu(3+) ions are attractive as luminescent materials for various photonic applications. Co-doping with copper has been proposed for enhancing material optical properties, but the quenching effect of Cu(2+) impurities on Eu(3+) emission in glass remains largely unexplored. In this work, Eu2O3/CuO-containing barium-phosphate glasses have been prepared by the melt-quench method, and the Eu(3+) photoluminescence (PL) quenching resulting from Eu(3+)→Cu(2+) energy transfer was evaluated. Optical absorption spectroscopy showed that with the increase in CuO concentration the Cu(2+) absorption band resonant with Eu(3+) emission (e.g. (5)D0→(7)F2 transition around 615 nm) developed steadily. As a result, Eu(3+) PL was progressively quenched. Evaluation of the quenching constants as a function of temperature in the 298-673K range showed differences basically within experimental error, consistent with a resonant transfer and lack of phonon-assisted processes. Moreover, analysis of the Eu(3+) emission decay dynamics revealed a strong correlation between the decay rates and Cu(2+) impurity levels. Results imply that for practical applications the levels of Cu(2+) in Eu(3+)/Cu(+)-activated glasses should be reduced if not removed as these will significantly limit device efficiency. PMID:25797222

  6. Enhanced UV absorbance and photoluminescence properties of ultrasound assisted synthesized gold doped ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Sahu, Dojalisa; Panda, N. R.; Acharya, B. S.; Panda, A. K.

    2014-06-01

    Au doped ZnO (ZnO:Au) nanostructures were synthesized by ultrasound assisted wet chemical method. The concentration of dopant was varied and both structural and optical properties of ZnO:Au were investigated. The crystal structure and morphology of the samples were examined by X-ray diffraction (XRD) and transmission electron microscopy (TEM). These results showed the formation of nanorods of ZnO:Au having wurtzite structure and c-axis orientation. Gradual increase in crystallite size and bond length was also observed with the increase in gold concentration in ZnO intending the expansion of lattice after gold doping. The optical absorption measurements showed high ultraviolet (UV) absorbance property of ZnO:Au with sharp and intense absorption band in this region as compared to pristine ZnO. Photoluminescence (PL) measurements showed excitonic emission band of ZnO around 390 nm for both undoped and Au doped ZnO nanoparticles. Further, a strong emission around 467 nm was observed in the PL spectra of ZnO/ZnO:Au which was attributed to the transitions related to excess of oxygen vacancies. Interestingly, a new band was observed at 582 nm for doped ZnO samples which grew in intensity with doping concentration. This band was ascribed to the gold nanoparticle adsorbed on the surface of ZnO.

  7. Photoluminescence of zirconium hydroxide: Origin of a chemisorption-induced ‘red-stretch'

    NASA Astrophysics Data System (ADS)

    Watters, Evan J.; Sengupta, Sandip K.; Peterson, Gregory W.; Whitten, James E.

    2014-01-01

    Zirconium hydroxide particles are reactive and photoluminescent, emitting blue light under ultraviolet (UV) irradiation. Adsorption-induced changes in the photoluminescence (PL) offer opportunities for gas sensor/filtration applications. The PL of Zr(OH)4 is quenched in the presence of molecular oxygen, likely through trapping of surface electrons via the formation of O2-. Heating the powder high enough to desorb hydroxyl groups broadens the PL spectrum toward longer wavelengths. This ‘red-stretch' also occurs upon reaction with sulfur dioxide, which replaces terminal hydroxyl groups with sulfite ones. Excessive UV irradiation correspondingly induces this effect. A mechanism is proposed to account for the red-stretch.

  8. Photoluminescence Properties Research on Graphene Quantum Dots/Silver Composites.

    PubMed

    Wang, Jun; Li, Yan; Zhang, Bo-Ping; Xie, Dan-Dan; Ge, Juan; Liu, Hui

    2016-04-01

    Graphene quantum dots (GQDs) possess unique properties of graphene and exhibit a series of new phenomena of 0 dimension (D) carbon materials. Thus, GQDs have attracted much attention from researchers and have shown great promise for many applications. Recently, many works focus on GQDs-metal ions and metal nanoparticles (NPs). Although, many researches point out that metal ions and metal NPs have significant effect on photoluminescence (PL) feature of GQDs, mainly focus on PL intensity. Here, for the first time, we reported that metal NPs also affected PL peak position which was dependent on the mix mechanism of metal and GQDs. When GQDs-silver (Ag) composite mixed by physical method and excited at a wavelength of 320 nm, PL peak position of composites first showed blue-shifted then red-shifted with increasing of Ag content. However, if GQDs-Ag composite prepared by chemical method, PL peak position of the composites blue-shifted. Furthermore, the shift of PL peak position of GQDs-Ag prepared both for physical and chemical method displayed excitation-dependent feature. When the excitation wavelength approached to Ag SPR peaks, no obvious PL shift was observed. The mechanism for different PL shifts and the phenomenon of excitation-dependent PL shift as well as the formation mechanism of GQDs-Ag composite by chemical method are discussed in detail in this paper. PMID:27451653

  9. Absorption and emission of silicon nanocrystals embedded in SiC: Eliminating Fabry-Pérot interference

    SciTech Connect

    Schnabel, M.; Summonte, C.; Canino, M.; Dyakov, S. A.; López-Conesa, L.; Löper, P.; Janz, S.; Wilshaw, P. R.

    2015-01-28

    Silicon nanocrystals embedded in SiC are studied by spectrophotometry and photoluminescence (PL) spectroscopy. Absorptivities are found to be affected by residual Fabry-Pérot interference arising from measurements of reflection and transmission at locations of different film thickness. Multiple computational and experimental methods to avoid these errors in thin film measurements, in general, are discussed. Corrected absorptivity depends on the quantity of Si embedded in the SiC but is independent of the Si crystallinity, indicating a relaxation of the k-conservation criterion for optical transitions in the nanocrystals. Tauc gaps of 1.8–2.0 and 2.12 eV are determined for Si nanoclusters and SiC, respectively. PL spectra exhibit a red-shift of ∼100 nm per nm nominal Si nanocluster diameter, which is in agreement with quantum confinement but revealed to be an artifact entirely due to Fabry-Pérot interference. Several simple experimental methods to diagnose or avoid interference in PL measurements are developed that are applicable to all thin films. Corrected PL is rather weak and invariant with passivation, indicating that non-paramagnetic defects are responsible for rapid non-radiative recombination. They are also responsible for the broad, sub-gap PL of the SiC, and can wholly account for the form of the PL of samples with Si nanoclusters. The PL intensity of samples with Si nanoclusters, however, can only be explained with an increased density of luminescent defects in the SiC due to Si nanoclusters, efficient tunneling of photogenerated carriers from Si nanoclusters to SiC defects, or with emission from a-Si nanoclusters. Films prepared on Si exhibit much weaker PL than the same films prepared on quartz substrates.

  10. Absence of quantum confinement effects in the photoluminescence of Si{sub 3}N{sub 4}–embedded Si nanocrystals

    SciTech Connect

    Hiller, D. Zelenina, A.; Gutsch, S.; Zacharias, M.; Dyakov, S. A.; López-Conesa, L.; López-Vidrier, J.; Peiró, F.; Garrido, B.; Estradé, S.; Schnabel, M.; Weiss, C.; Janz, S.

    2014-05-28

    Superlattices of Si-rich silicon nitride and Si{sub 3}N{sub 4} are prepared by plasma-enhanced chemical vapor deposition and, subsequently, annealed at 1150 °C to form size-controlled Si nanocrystals (Si NCs) embedded in amorphous Si{sub 3}N{sub 4}. Despite well defined structural properties, photoluminescence spectroscopy (PL) reveals inconsistencies with the typically applied model of quantum confined excitons in nitride-embedded Si NCs. Time-resolved PL measurements demonstrate 10{sup 5} times faster time-constants than typical for the indirect band structure of Si NCs. Furthermore, a pure Si{sub 3}N{sub 4} reference sample exhibits a similar PL peak as the Si NC samples. The origin of this luminescence is discussed in detail on the basis of radiative defects and Si{sub 3}N{sub 4} band tail states in combination with optical absorption measurements. The apparent absence of PL from the Si NCs is explained conclusively using electron spin resonance data from the Si/Si{sub 3}N{sub 4} interface defect literature. In addition, the role of Si{sub 3}N{sub 4} valence band tail states as potential hole traps is discussed. Most strikingly, the PL peak blueshift with decreasing NC size, which is often observed in literature and typically attributed to quantum confinement (QC), is identified as optical artifact by transfer matrix method simulations of the PL spectra. Finally, criteria for a critical examination of a potential QC-related origin of the PL from Si{sub 3}N{sub 4}-embedded Si NCs are suggested.

  11. Plasmonic enhancement of photoluminescence from aluminium nitride

    NASA Astrophysics Data System (ADS)

    Flynn, Chris; Stewart, Matthew

    2016-03-01

    Aluminium nitride (AlN) films were grown on c-plane sapphire wafers by molecular beam epitaxy (MBE) under aluminium-rich conditions. The excess aluminium (Al) accumulated on the surface of the films as micro-scale droplets 1-10 μm in size, and as Al nanoparticles with diameters in the range 10-110 nm. Photoluminescence (PL) measurements were performed on the AlN samples using a 193 nm Excimer laser as the excitation source. Prior to PL measurements the wafers were cleaved in half. One half of each wafer was submitted to a 10 min treatment in H3PO4 heated to 70 °C to remove the excess Al from the film surface. The remaining half was left in the as-deposited condition. The mean intensities of the near-band-edge PL peaks of the as-deposited samples were 2.0-3.4 times higher compared to the samples subjected to the H3PO4 Al-removal treatment. This observation motivated calculations to determine the optimal Al surface nanosphere size for plasmonic enhancement of PL from AlN. The PL enhancement was found to peak for an Al nanosphere radius of 15 nm, which is within the range of the experimentally-observed Al nanoparticle sizes.

  12. Investigation of temperature-dependent photoluminescence in multi-quantum wells

    PubMed Central

    Fang, Yutao; Wang, Lu; Sun, Qingling; Lu, Taiping; Deng, Zhen; Ma, Ziguang; Jiang, Yang; Jia, Haiqiang; Wang, Wenxin; Zhou, Junming; Chen, Hong

    2015-01-01

    Photoluminescence (PL) is a nondestructive and powerful method to investigate carrier recombination and transport characteristics in semiconductor materials. In this study, the temperature dependences of photoluminescence of GaAs-AlxGa1-xAs multi-quantum wells samples with and without p-n junction were measured under both resonant and non-resonant excitation modes. An obvious increase of photoluminescence(PL) intensity as the rising of temperature in low temperature range (T < 50 K), is observed only for GaAs-AlxGa1-xAs quantum wells sample with p-n junction under non-resonant excitation. The origin of the anomalous increase of integrated PL intensity proved to be associated with the enhancement of carrier drifting because of the increase of carrier mobility in the temperature range from 15 K to 100 K. For non-resonant excitation, carriers supplied from the barriers will influence the temperature dependence of integrated PL intensity of quantum wells, which makes the traditional methods to acquire photoluminescence characters from the temperature dependence of integrated PL intensity unavailable. For resonant excitation, carriers are generated only in the wells and the temperature dependence of integrated PL intensity is very suitable to analysis the photoluminescence characters of quantum wells. PMID:26228734

  13. Experimental and theoretical photoluminescence studies in nucleic acid assembled gold-upconverting nanoparticle clusters

    NASA Astrophysics Data System (ADS)

    He, Liangcan; Mao, Chenchen; Cho, Suehyun; Ma, Ke; Xi, Weixian; Bowman, Christopher N.; Park, Wounjhang; Cha, Jennifer N.

    2015-10-01

    Combinations of rare earth doped upconverting nanoparticles (UCNPs) and gold nanostructures are sought as nanoscale theranostics due to their ability to convert near infrared (NIR) photons into visible light and heat, respectively. However, because the large NIR absorption cross-section of the gold coupled with their thermo-optical properties can significantly hamper the photoluminescence of UCNPs, methods to optimize the ratio of gold nanostructures to UCNPs must be developed and studied. We demonstrate here nucleic acid assembly methods to conjugate spherical gold nanoparticles (AuNPs) and gold nanostars (AuNSs) to silica-coated UCNPs and probe the effect on photoluminescence. These studies showed that while UCNP fluorescence enhancement was observed from the AuNPs conjugated UCNPs, AuNSs tended to quench fluorescence. However, conjugating lower ratios of AuNSs to UCNPs led to reduced quenching. Simulation studies both confirmed the experimental results and demonstrated that the orientation and distance of the UCNP with respect to the core and arms of the gold nanostructures played a significant role in PL. In addition, the AuNS-UCNP assemblies were able to cause rapid gains in temperature of the surrounding medium enabling their potential use as a photoimaging-photodynamic-photothermal agent.Combinations of rare earth doped upconverting nanoparticles (UCNPs) and gold nanostructures are sought as nanoscale theranostics due to their ability to convert near infrared (NIR) photons into visible light and heat, respectively. However, because the large NIR absorption cross-section of the gold coupled with their thermo-optical properties can significantly hamper the photoluminescence of UCNPs, methods to optimize the ratio of gold nanostructures to UCNPs must be developed and studied. We demonstrate here nucleic acid assembly methods to conjugate spherical gold nanoparticles (AuNPs) and gold nanostars (AuNSs) to silica-coated UCNPs and probe the effect on

  14. Influence of Nd dopant amount on microstructure and photoluminescence of TiO2:Nd thin films

    NASA Astrophysics Data System (ADS)

    Wojcieszak, Damian; Mazur, Michal; Kaczmarek, Danuta; Morgiel, Jerzy; Zatryb, Grzegorz; Domaradzki, Jaroslaw; Misiewicz, Jan

    2015-10-01

    TiO2 and TiO2:Nd thin films were deposited using reactive magnetron sputtering process from mosaic Ti-Nd targets with various Nd concentration. The thin films were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM) and spectroscopic techniques. Photoluminescence (PL) in the near infrared obtained upon 514.5 nm excitation was also examined. The relationship between the Nd concentration, structural, optical and photoluminescence properties of prepared thin films was investigated and discussed. XRD and TEM measurements showed that an increase in the Nd concentration in the thin films hinders the crystal growth in the deposited coatings. Depending on the Nd amount in the thin films, TiO2 with the rutile, mixed rutile-amorphous or amorphous phase was obtained. Transmittance measurements revealed that addition of Nd dopant to titania matrix did not deteriorate optical transparency of the coatings, however it influenced on the position of the fundamental absorption edge and therefore on the width of optical band gap energy. All TiO2:Nd thin films exhibited PL emission that occurred at ca. 0.91, 1.09 and 1.38 μm. Finally, results obtained for deposited coatings showed that titania with the rutile structure and 1.0 at.% of Nd was the most efficient in VIS to NIR photon conversion.

  15. Electrodeposition of cerium oxide on porous silicon via anodization and enhancement of photoluminescence

    NASA Astrophysics Data System (ADS)

    Mizuhata, Minoru; Kubo, Yohei; Maki, Hideshi

    2016-02-01

    A porous Si/cerium oxide composite (PSi/CeO2) was synthesized by electrodeposition of CeO2 via anodic oxidation on PSi. The PSi photoluminescence (PL) was enhanced. The anodically oxidized PSi substrates in HF solution had macropores (diameter 2 μm), mesopores (diameter 15 nm), and micropores (diameter less than 4 nm). Emission at 700 nm from microporous PSi (microPSi) was observed under ultraviolet irradiation. Transmission electron microscopy showed that in microPSi/CeO2, the oxide was infiltrated into microPSi by anodization. The deposited amount of CeO2 depended on the reaction time, applied voltage, temperature, and reaction species concentrations in anodization. Emission by microPSi/CeO2 at 650 nm was observed; the PL intensity was higher (about 10-30 times) than that of PSi because of energy transfer from CeO2 to nanosized Si in porous layers produced by HF etching. The lifetime of the PL of microPSi/CeO2 was longer than that of microPSi. Excitation spectra of microPSi/CeO2 at 650 nm and diffuse-reflectance spectra showed that the excitation peak for microPSi/CeO2 was similar to the absorbance of CeO2, and excitation of microPSi/CeO2 gave two peaks, at 3.7 and 4.4 eV; these peaks originated from the absorptions of CeO2 and Si nanocrystals. The PL of PSi was enhanced in microPSi/CeO2 because of efficient energy transfer from CeO2 to the Si nanocrystal.

  16. On the pH-dependent quenching of quantum dot photoluminescence by redox active dopamine.

    PubMed

    Ji, Xin; Palui, Goutam; Avellini, Tommaso; Na, Hyon Bin; Yi, Chongyue; Knappenberger, Kenneth L; Mattoussi, Hedi

    2012-04-01

    We investigated the charge transfer interactions between luminescent quantum dots (QDs) and redox active dopamine. For this, we used pH-insensitive ZnS-overcoated CdSe QDs rendered water-compatible using poly (ethylene glycol)-appended dihydrolipoic acid (DHLA-PEG), where a fraction of the ligands was amine-terminated to allow for controlled coupling of dopamine-isothiocyanate onto the nanocrystal. Using this sample configuration, we probed the effects of changing the density of dopamine and the buffer pH on the fluorescence properties of these conjugates. Using steady-state and time-resolved fluorescence, we measured a pronounced pH-dependent photoluminescence (PL) quenching for all QD-dopamine assemblies. Several parameters affect the PL loss. First, the quenching efficiency strongly depends on the number of dopamines per QD-conjugate. Second, the quenching efficiency is substantially increased in alkaline buffers. Third, this pH-dependent PL loss can be completely eliminated when oxygen-depleted buffers are used, indicating that oxygen plays a crucial role in the redox activity of dopamine. We attribute these findings to charge transfer interactions between QDs and mainly two forms of dopamine: the reduced catechol and oxidized quinone. As the pH of the dispersions is changed from acidic to basic, oxygen-catalyzed transformation progressively reduces the dopamine potential for oxidation and shifts the equilibrium toward increased concentration of quinones. Thus, in a conjugate, a QD can simultaneously interact with quinones (electron acceptors) and catechols (electron donors), producing pH-dependent PL quenching combined with shortening of the exciton lifetime. This also alters the recombination kinetics of the electron and hole of photoexcited QDs. Transient absorption measurements that probed intraband transitions supported those findings where a simultaneous pronounced change in the electron and hole relaxation rates was measured when the pH was changed from

  17. Diffusion length and resistivity distribution characteristics of silicon wafer by photoluminescence

    SciTech Connect

    Baek, Dohyun; Lee, Jaehyeong; Choi, Byoungdeog

    2014-10-15

    Highlights: • Analytical photoluminescence efficiency calculation and PL intensity ratio method are developed. • Wafer resistivity and diffusion length characteristics are investigated by PL intensity ratio. • PL intensity is well correlated with resistivity, diffusion length or defect density on wafer measurement. - Abstract: Photoluminescence is a convenient, contactless method to characterize semiconductors. Its use for room-temperature silicon characterization has only recently been implemented. We have developed the PL efficiency theory as a function of substrate doping densities, bulk trap density, photon flux density, and reflectance and compared it with experimental data initially for bulk Si wafers. New developed PL intensity ratio method is able to predict the silicon wafer properties, such as doping densities, minority carrier diffusion length and bulk trap density.

  18. Photoluminescence properties of silicon nanocrystals interacting with gold nanoparticles via exciton-plasmon coupling

    NASA Astrophysics Data System (ADS)

    Potrick, Karsten; Huisken, Friedrich

    2015-03-01

    The photoluminescence (PL) properties of silicon nanocrystals (Si NCs) deposited on gold nanostructures have been studied regarding PL intensity and lifetime. In contrast to most investigations, which attempt to optimize the overlap between the plasmon resonance and the Si NCs' PL band, we chose much smaller gold nanoparticles to achieve an improved exciton-plasmon coupling. PL enhancements of up to 20 were observed near the plasmon resonance. In the maximum of the PL band at 710 nm, we determined a PL enhancement of ˜4 while the average PL lifetime was found to increase from 45 to 66 μ s . The experimental observations were successfully explained with a model invoking bidirectional energy transfer between excitonic and plasmonic states, being operative in addition to the normal exciton recombination rate enhancement.

  19. Tunable Photoluminescent Core/Shell Cu(+)-Doped ZnSe/ZnS Quantum Dots Codoped with Al(3+), Ga(3+), or In(3+).

    PubMed

    Cooper, Jason K; Gul, Sheraz; Lindley, Sarah A; Yano, Junko; Zhang, Jin Z

    2015-05-13

    Semiconductor quantum dots (QDs) with stable, oxidation resistant, and tunable photoluminescence (PL) are highly desired for various applications including solid-state lighting and biological labeling. However, many current systems for visible light emission involve the use of toxic Cd. Here, we report the synthesis and characterization of a series of codoped core/shell ZnSe/ZnS QDs with tunable PL maxima spanning 430-570 nm (average full width at half-maximum of 80 nm) and broad emission extending to 700 nm, through the use of Cu(+) as the primary dopant and trivalent cations (Al(3+), Ga(3+), and In(3+)) as codopants. Furthermore, we developed a unique thiol-based bidentate ligand that significantly improved PL intensity, long-term stability, and resilience to postsynthetic processing. Through comprehensive experimental and computational studies based on steady-state and time-resolved spectroscopy, electron microscopy, and density functional theory (DFT), we show that the tunable PL of this system is the result of energy level modification to donor and/or acceptor recombination pathways. By incorporating these findings with local structure information obtained from extended X-ray absorption fine structure (EXAFS) studies, we generate a complete energetic model accounting for the photophysical processes in these unique QDs. With the understanding of optical, structural, and electronic properties we gain in this study, this successful codoping strategy may be applied to other QD or related systems to tune the optical properties of semiconductors while maintaining low toxicity. PMID:25893312

  20. Time Resolved Photoluminescence Studies of ZnO and Zn2SnO4 Nanowires for Solar Cells Applications

    NASA Astrophysics Data System (ADS)

    Yakami, Baichhabi Raj; Mahat, Meg; Chen, Jiajun; Lu, Liyou; Wang, Wenyong; Pikal, Jon M.

    2013-03-01

    Sensitized nanowires (NWs) are a promising option for solar cells. They serve as the support structure for the absorbing centers, provide interfacial charge separation, and transport to the anode. Most work has focused on binary oxides, but ternary oxides have advantages due to flexibility in the properties of the oxide. Here we report on the photoluminescence (PL) and Time Resolved PL (TRPL) of Zinc oxide (ZnO) and Zinc Tin Oxide (ZTO) NWs grown by Chemical Vapor Deposition. The ZnO NWs show strong band gap emission and weak but resolvable defect emission peaks. The PL from the ZTO NWs does not show any band gap emission and absorption measurements confirm that these NWs have a direct forbidden transition. The ZTO NWs do have a board visible emission peak, which is usually attributed defects and oxygen vacancies. TRPL of the band gap emission in ZnO NWs yield a carrier lifetime of 1.4ns. The TRPL of the defect peaks in ZTO NWs are more complicated, showing a multi-exponential decay but with an overall decay rate similar to the ZnO NWs. This indicates that the expected increase in carrier lifetime in the ZTO NWs is not currently realized likely due to defect recombination, and additional optimization of the NW growth process may yield improved performance. DOE

  1. Interfacial synthesis of polyethyleneimine-protected copper nanoclusters: Size-dependent tunable photoluminescence, pH sensor and bioimaging.

    PubMed

    Wang, Chan; Yao, Yagang; Song, Qijun

    2016-04-01

    The copper nanoclusters (CuNCs) offer excellent potential as functional biological probes due to their unique photoluminescence (PL) properties. Herein, CuNCs capped with hyperbranched polyethylenimine (PEI) were prepared by the interfacial etching approach. The resultant PEI-CuNCs exhibited good dispersion and strong fluorescence with high quantum yields (QYs, up to 7.5%), which would be endowed for bioimaging system. By changing the reaction temperatures from 25 to 150 °C, the size of PEI-CuNCs changed from 1.8 to 3.5 nm, and thus tunable PL were achieved, which was confirmed by transmission electron microscopy (TEM) imagings and PL spectra. Besides, PEI-CuNCs had smart absorption characteristics that the color changes from colorless to blue with changing the pH value from 2.0 to 13.2, and thus they could be used as color indicator for pH detection. In addition, the PEI-CuNCs exhibited good biocompatibility and low cytotoxicity to 293T cells through MTT assay. Owing to the positively charged of PEI-CuNCs surface, they had the ability to capture DNA, and the PEI-CuNCs/DNA complexes could get access to cells for efficient gene expression. Armed with these attractive properties, the synthesized PEI-CuNCs are quite promising in biological applications. PMID:26774573

  2. Photoluminescence of SrS:Cu,Ag and SrS 1- xSe x:Cu,Ag thin films

    NASA Astrophysics Data System (ADS)

    Poelman, D.; Wauters, D.; Van Meirhaeghe, R. L.; Cardon, F.

    2000-01-01

    The photoluminescence (PL) of SrS:Cu,Ag and SrS 1- xSe x:Cu,Ag thin films has been investigated. The influence of rapid thermal annealing conditions and Cu dopant concentration on the PL intensity has been studied. The PL emission spectrum was measured as a function of both Cu concentration and temperature. An unexpected PL intensity peak was observed around a temperature of 54 K.

  3. Scanning photoluminescent spectroscopy of bioconjugated quantum dots

    NASA Astrophysics Data System (ADS)

    Chornokur, G.; Ostapenko, S.; Oleynik, E.; Phelan, C.; Korsunska, N.; Kryshtab, T.; Zhang, J.; Wolcott, A.; Sellers, T.

    2009-04-01

    We report on the application of the bio-conjugated quantum dots (QDs) for a "sandwich" enzyme-linked immunosorbent assay (ELISA) cancer testing technique. Quantum dot ELISA detection of the cancer PSA antigen at concentrations as low as 0.01 ng/ml which is ˜50 times lower than the classic "sandwich" ELISA was demonstrated. Scanning photoluminescence (PL) spectroscopy was performed on dried ELISA wells and the results compared with the same QD samples dried on a solid substrate. We confirmed a "blue" up to 37 nm PL spectral shift in a case of QDs conjugated to PSA antibodies. Increasing of the "blue" spectral shift was observed at lower PSA antigen concentrations. The results can be used to improve sensitivity of "sandwich" ELISA cancer antigen detection.

  4. Biexciton cascade emission reveals absolute absorption cross section of single semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Ihara, Toshiyuki

    2016-06-01

    The sequential two-photon emission process known as biexciton cascade emission is a characteristic phenomenon that occurs in photoexcited semiconductor nanocrystals (NCs). This process occurs when a biexciton state is created in the NCs; thus, the occurrence of the process is related to the photoabsorption properties of the NCs. This paper presents a simple equation that connects the photoabsorption of single NCs and the biexciton cascade emission. The equation is found to be independent of the quantum yields of photoluminescence (PL). With this equation and using an analysis of second-order photon correlation, the absolute absorption cross section σ of the single NCs can be evaluated, obtaining values on the order of 10-14c m2 . This analysis shows that ionization during PL blinking does not affect the validity of the relation, indicating that the evaluation of σ , based on the equation, is applicable for various NCs with unique structures.

  5. N2 Laser Induced Photoluminescence Emission in (ZnS: ZnO):Cu Phosphors

    NASA Astrophysics Data System (ADS)

    Muraleedharan, R.; Khokhar, M. S. K.; Namboodiri, V. P.; Girijavallabhan, C. P.

    Nitrogen laser induced photoluminescence (PL) emissions from (ZnS: ZnO):Cu powder phosphors have been carried out under varying conditions of sample preparation. The conditions for optimum efficiency of PL emission in (ZnS: ZnO):Cu phosphors and their spectral characteristics have been investigated. The emission peak in the PL spectra was found to shift towards longer wavelengths side as the concentrations of ZnO in (ZnS: ZnO) mixture was varied from 0% to 100%. The mechanism of PL emission in the above phosphor is explained on the basis of classical “Schon-Klassen” model.

  6. Polarization and time-resolved photoluminescence spectroscopy of excitons in MoSe2 monolayers

    NASA Astrophysics Data System (ADS)

    Wang, G.; Palleau, E.; Amand, T.; Tongay, S.; Marie, X.; Urbaszek, B.

    2015-03-01

    We investigate valley exciton dynamics in MoSe2 monolayers in polarization- and time-resolved photoluminescence (PL) spectroscopy at 4 K. Following circularly polarized laser excitation, we record a low circular polarization degree of the PL of typically ≤5%. This is about 10 times lower than the polarization induced under comparable conditions in MoS2 and WSe2 monolayers. The evolution of the exciton polarization as a function of excitation laser energy and power is monitored in PL excitation experiments. Fast PL emission times are recorded for both the neutral exciton of ≤3 ps and for the charged exciton (trion) of 12 ps.

  7. Exciton photoluminescence in resonant quasi-periodic Thue-Morse quantum wells.

    PubMed

    Hsueh, W J; Chang, C H; Lin, C T

    2014-02-01

    This Letter investigates exciton photoluminescence (PL) in resonant quasi-periodic Thue-Morse quantum wells (QWs). The results show that the PL properties of quasi-periodic Thue-Morse QWs are quite different from those of resonant Fibonacci QWs. The maximum and minimum PL intensities occur under the anti-Bragg and Bragg conditions, respectively. The maxima of the PL intensity gradually decline when the filling factor increases from 0.25 to 0.5. Accordingly, the squared electric field at the QWs decreases as the Thue-Morse QW deviates from the anti-Bragg condition. PMID:24487847

  8. Twin extra-high photoluminescence in resonant double-period quantum wells.

    PubMed

    Chang, C H; Cheng, Y H; Hsueh, W J

    2014-12-01

    Twin extra high photoluminescence (PL) in resonant quasi-periodic double-period quantum wells (DPQWs) for higher-generation orders is demonstrated. In the DPQW, the number of maxima in the maximum values of the PL intensity is two, which is different from other quasi-periodic quantum wells (QWs) and traditional periodic QWs. The maximum PL intensity in a DPQW is also stronger than that in a periodic QW under the anti-Bragg condition and that in a Fibonacci QW. Although the peaks of the squared electric field for the twin PL are both located near the QWs, their field profiles are distinct. PMID:25490626

  9. White Photoluminescence from Carbon-Incorporated Silica Fabricated from Rice Husk

    NASA Astrophysics Data System (ADS)

    Ishikawa, Yukari; Kawasaki, Shinji; Ishi, Yosuke; Sato, Koji; Matsumura, Akihiro

    2012-01-01

    White photoluminescence (PL) from thermally treated rice husk is demonstrated. The strongest PL is obtained after oxidation at 400 °C following carbonization at 600 °C. The PL intensity was strong enough to be detected by the naked eye in daylight under the irradiation of 370 nm light from a light-emitting-diode (LED)-type flashlight. Thermal treatment changes rice husk to silicon oxycarbide but the amorphous structure and cell-wall architecture of the plants are maintained. The origin of PL is speculated to be related to some centers or defects in strained silicon oxycarbide.

  10. Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers

    SciTech Connect

    Martinez-Pastor, J.; Fuster, D.; Abellan, M.; Anguita, J.; Sochinskii, N. V.

    2008-03-01

    We demonstrated the effect of reactive ion beam etching (RIBE) process on the PL properties of CdTe/sapphire metal organic vapor phase epitaxy layers. At optimum conditions, the RIBE attack does not make significant morphological changes but it results in an increase of the concentration of acceptor impurities. This was revealed by an increase of the overall photoluminescence (PL) intensity and, simultaneously, a decrease of the PL decay time, more important on the low energy side of PL spectrum due to the recombination of carriers in acceptor pairs.

  11. TiO2 controlling photoluminescence of AWO4 (A =Ca,Sr,Ba) nanofilms

    NASA Astrophysics Data System (ADS)

    Jia, Runping; Zhang, Guoxin; Wu, Qingsheng; Ding, Yaping

    2006-07-01

    AWO4 (A =Ca,Sr,Ba) nanofilms are prepared by a self-inventive technique using collodion to disperse nanoparticles and form film, and their photoluminescence (PL) properties are controlled by a nano-TiO2 doping method. This cannot only reach the results of uniform film and PL enhancement, but also realize a PL increase/decrease shift effect. The PL behaviors of AWO4 nanofilms doped by TiO2 are in good agreement with Gaussion function relation. In addition, there is a positive correlation between the critical concentrations of TiO2 in AWO4-TiO2 nanofilm series and A's ionic potential.

  12. Photoluminescence structure, and composition of laterally anodized porous Si

    NASA Technical Reports Server (NTRS)

    Jung, K. H.; Shih, S.; Kwong, D. L.; George, T.; Lin, T. L.; Liu, H. Y.; Zavada, J.

    1992-01-01

    We have studied the photoluminescence (PL), structure, and composition of laterally anodized porous Si. Broad PL peaks were observed centered between about 620-720 nm with strong intensities measured from 500 to 860 nm. Macroscopic variations in PL intensities and peak positions are explained in terms of the structure and anodization process. Structural studies suggest that the PL appears to originate from a multilayered porous Si structure in which the top two layers are amorphous. X-ray diffraction spectra also suggest the presence of a significant amorphous phase. In addition to high concentrations of B and N, we have measured extremely high concentrations much greater than 10 exp 20 cu cm of H, C, O, and F. Our results indicate that laterally anodized porous Si does not fit the crystalline Si quantum wire model prevalent in the literature suggesting that some other structure is responsible for the observed luminescence.

  13. Photoluminescence properties of Mg-doped InN nanowires

    SciTech Connect

    Zhao, Songrui; Liu, Xuedong; Mi, Zetian

    2013-11-11

    In this work, photoluminescence (PL) properties of nearly defect-free Mg-doped InN nanowires were investigated in detail. The low-doped sample exhibits two PL emission peaks up to 152 K, which can be ascribed to the band-to-band recombination and the Mg-acceptor energy level related recombination, respectively. For the high-doped sample, the Mg-acceptor energy level related transition dominates. Detailed power dependent PL studies further indicate that the Mg-acceptor energy level related PL emission is due to the donor-acceptor pair recombination process, which subsequently evolves into the free-to-acceptor recombination with increasing temperature.

  14. Photoluminescence Studies in CuAlS2 Crystals

    NASA Astrophysics Data System (ADS)

    Shirakata, Sho; Aksenov, Igor; Sato, Katsuaki; Isomura, Shigehiro

    1992-08-01

    Photoluminescence (PL) measurements have been carried out at low temperature (77 and 10 K) on CuAlS2 crystals grown by the chemical vapor transport method. Seven sharp PL lines have been observed near the band edge. Based on the photoreflectance measurements, the PL line at 3.550 eV has been assigned to a free exciton emission. The lines at 3.540, 3.532, 3.500 and 3.475 eV are tentatively assigned to the bound excitons, and they are discussed in terms of the crystal composition and the annealing conditions. This study also refers to the PL lines and peaks at about 2.9 eV.

  15. Using quantum dot photoluminescence for load detection

    NASA Astrophysics Data System (ADS)

    Moebius, M.; Martin, J.; Hartwig, M.; Baumann, R. R.; Otto, T.; Gessner, T.

    2016-08-01

    We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N',N'-Tetrakis(3-methylphenyl)-3,3'-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  16. FT-PL analysis of CIGS/CdS/Zno interfaces

    NASA Astrophysics Data System (ADS)

    Webb, John D.; Keyes, Brian M.; Ramanathan, Kannan; Dippo, Patricia; Niles, David W.; Noufi, Rommel

    1997-02-01

    High-quality copper indium gallium diselenide (CIGS) films were subjected to a variety of surface treatments attendant to and including deposition of CdS and/or ZnO junctions or buffer layers. The resulting devices were analyzed at 87 K using Fourier transform photoluminescence (FT-PL) spectroscopy as part of a battery of analytical procedures, including surface analysis, ellipsometry, and I-V measurements, designed to elucidate the influences of the several interfaces on device performance. Our FT-PL system was upgraded with a miniature Joule-Thomson cryostat and a helium-neon laser excitation source to enable collection of highly-resolved, continuous PL spectra from 950-1750 nm. The PL intensity enhancements measured with the upgraded FT-PL system for devices fabricated using chemical bath deposition (CBD) of CdS, with or without a ZnO electrode, are much greater than for devices incorporating physical vapor deposited (PVD) CdS or ZnO/CIGS interfaces. Exposure of the CIGS films to components of the CBD solution alone, without deposition of CdS, also increases PL intensity, implying a reduction in the rate of non-radiative recombination in the films. Application of CBD CdS or a CBD background solution to the CIGS shifted its PL spectrum to shorter wavelengths, while application of PVD CdS or ZnO to the CIGS broadened its PL spectrum at longer wavelengths.

  17. Optical absorption and emission characterization of P3HT: graphene composite for its prospective photovoltaic application

    NASA Astrophysics Data System (ADS)

    Singh, Joginder; Prasad, Neetu; Nirwal, Varun Singh; Gautam, Khyati; Peta, Koteswara Rao; Bhatnagar, P. K.

    2016-05-01

    In the present work, regioregular P3HT (Poly (3-hexylthiophene-2, 5-diyl) was blended with graphene nanopowder and the optical spectroscopic characterization of the composite has been performed. It was observed that at low concentration of graphene (up to 0.1 wt %) there is no significant variation in absorption intensity or wavelength range. But at higher concentration (> 0.1 wt %) the absorption intensity starts reducing. Whereas, the photoluminescence of the composite solution quenches as we increase the concentration of graphene. It reveals that charge recombination decreases with increase in concentration (0.05 to 0.5 wt %) of graphene. Therefore 0.1 wt % seems to be the optimized concentration of graphene in the composite for which appropriate quenching of PL was observed without any significant reduction in absorption of photons. Thus maximum efficiency in P3HT: graphene composite photovoltaic cell is expected for 0.1 wt % of graphene concentration in our typical case.

  18. Experimental and theoretical photoluminescence studies in nucleic acid assembled gold-upconverting nanoparticle clusters.

    PubMed

    He, Liangcan; Mao, Chenchen; Cho, Suehyun; Ma, Ke; Xi, Weixian; Bowman, Christopher N; Park, Wounjhang; Cha, Jennifer N

    2015-11-01

    Combinations of rare earth doped upconverting nanoparticles (UCNPs) and gold nanostructures are sought as nanoscale theranostics due to their ability to convert near infrared (NIR) photons into visible light and heat, respectively. However, because the large NIR absorption cross-section of the gold coupled with their thermo-optical properties can significantly hamper the photoluminescence of UCNPs, methods to optimize the ratio of gold nanostructures to UCNPs must be developed and studied. We demonstrate here nucleic acid assembly methods to conjugate spherical gold nanoparticles (AuNPs) and gold nanostars (AuNSs) to silica-coated UCNPs and probe the effect on photoluminescence. These studies showed that while UCNP fluorescence enhancement was observed from the AuNPs conjugated UCNPs, AuNSs tended to quench fluorescence. However, conjugating lower ratios of AuNSs to UCNPs led to reduced quenching. Simulation studies both confirmed the experimental results and demonstrated that the orientation and distance of the UCNP with respect to the core and arms of the gold nanostructures played a significant role in PL. In addition, the AuNS-UCNP assemblies were able to cause rapid gains in temperature of the surrounding medium enabling their potential use as a photoimaging-photodynamic-photothermal agent. PMID:26427014

  19. Application of ZnO nanoparticles to enhance photoluminescence in porous silicon and its possible utilization for improving the short wavelength quantum efficiency of silicon solar cell

    NASA Astrophysics Data System (ADS)

    Verma, Daisy; Kharkwal, Aneeta; Singh, S. N.; Singh, P. K.; Sharma, S. N.; Mehdi, S. S.; Husain, M.

    2014-11-01

    We have formed photoluminescent porous silicon (PS) layers and over which a ZnO layer (hereafter called ZnOPS layers) is deposited. We studied the photoluminescent properties of individual layers as well as the composite layer under excitation with 405 nm wavelength. Using the data of PL a theoretical analysis of a solar cell having such a composite layer of a given photoluminescent conversion efficiency ηPL on the front surface has been done. The condition of a photoluminescent composite layer (ZnOPS) useful for enhancing the spectral response of n+-p-p+ structured silicon solar cell has been identified.

  20. Photoluminescence analysis of a polythiophene derivative: Concentration and temperature effects

    NASA Astrophysics Data System (ADS)

    Castrellon-Uribe, J.; Güizado-Rodríguez, M.; Espíndola-Rivera, R.

    2016-08-01

    In this work, the photoluminescence properties of a PA copolymer, which is a polythiophene derived from 3-OT and (S)-(-)-1-(4-nitrophenyl) pyrrolidin-2-il) methyl 2-(thiophen-3-yl) acetate, were investigated. The optical response of the copolymer dissolved in a toluene solution and of the copolymer film under the optical excitation was analyzed. Besides, the temperature dependence of photoluminescence (PL) of the PA copolymer (solution and film) was examined. The PL behavior of the solution-phase copolymer (diluted and concentrated solutions) under 365 nm (UV light) excitation is reported. Moreover, the copolymer films were obtained using the spin coating technique. The PL of the copolymer films under 488 nm (blue light) irradiation was studied at different excitation powers. Finally, we examined the PL signal temperature dependence of the copolymer film. We determined that the maximum PL signal peak of the copolymer corresponds to 626 nm and has a temperature sensitivity of approximately 11 × 10-3/°C, with a minimum ascending and descending temperature hysteresis between 22 °C and 50 °C.

  1. Spectral tunability of cerium photoluminescence in nano sized LaF{sub 3}:Ce{sup 3+}

    SciTech Connect

    Srinivasan, T. K.; Suriyamurthy, N. Panigrahi, B. S.; Venkatraman, B.; Sukumar, A. A.

    2015-06-24

    Nano sized LaF{sub 3}:Ce{sup 3+} was synthesized by adopting co-precipitation technique with nominal composition as well as with different molar ratio of reactants La{sup 3+} (Lanthanum) and F{sup −} (Fluoride). All the samples were subjected to X-ray diffraction (XRD), XRF, UV-Vis absorption, and PL characterizations. XRD analysis did not reveal any significant change in the diffraction profile. Particle size variations were observed with respect to change in lanthanum to fluoride molar ratio. An interesting and intense photoluminescence excitation peaks were observed for the samples prepared non-stoichiometrically. The effect of varying nominal reactant composition demonstrates a possibility of introducing tunability in cerium emission in the same host. Life time of cerium has been measured to be in the order of nano seconds.

  2. Hot Photoluminescence in γ-In2Se3 Nanorods

    PubMed Central

    2008-01-01

    The energy relaxation of electrons in γ-In2Se3nanorods was investigated by the excitation-dependent photoluminescence (PL). From the high-energy tail of PL, we determine the electron temperature (Te) of the hot electrons. TheTevariation can be explained by a model in which the longitudinal optical (LO)-phonon emission is the dominant energy relaxation process. The high-quality γ-In2Se3nanorods may be a promising material for the photovoltaic devices. PMID:21749734

  3. Hot Photoluminescence in γ-In2Se3 Nanorods

    NASA Astrophysics Data System (ADS)

    Yang, M. D.; Hu, C. H.; Shen, J. L.; Lan, S. M.; Huang, P. J.; Chi, G. C.; Chen, K. H.; Chen, L. C.; Lin, T. Y.

    2008-11-01

    The energy relaxation of electrons in γ-In2Se3 nanorods was investigated by the excitation-dependent photoluminescence (PL). From the high-energy tail of PL, we determine the electron temperature ( T e) of the hot electrons. The T e variation can be explained by a model in which the longitudinal optical (LO)-phonon emission is the dominant energy relaxation process. The high-quality γ-In2Se3 nanorods may be a promising material for the photovoltaic devices.

  4. Photoluminescence and spontaneous emission enhancement in metamaterial nanostructures

    NASA Astrophysics Data System (ADS)

    Singh, M. R.; Cox, J. D.; Brzozowski, M.

    2014-02-01

    We present a theory for the photoluminescence (PL) and spontaneous emission of semiconductor nanoparticles (quantum dots—QDS) doped in a metamaterial heterostructure. The heterostructure is formed by fabricating a split-ring resonator and metallic rod metamaterial on a dielectric substrate. QDs are doped near the interface in the heterostructure. Our results indicate that the PL and spontaneous emission of the QDs are enhanced in the presence of the metamaterial when the exciton and surface plasmon frequencies are resonant. These findings are consistent with recent experimental studies. The present study can be used to make new types of nanoscale optical devices for sensing, switching and imaging applications based on metamaterials.

  5. Tuning Photoluminescence Response by Electric Field in Electrically Soft Ferroelectrics.

    PubMed

    Khatua, Dipak Kumar; Kalaskar, Abhijeet; Ranjan, Rajeev

    2016-03-18

    We show that an electrically soft ferroelectric host can be used to tune the photoluminescence (PL) response of rare-earth emitter ions by external electric field. The proof of this concept is demonstrated by changing the PL response of the Eu^{3+} ion by electric field on a model system Eu-doped 0.94(Na_{1/2}Bi_{1/2}TiO_{3})-0.06(BaTiO_{3}). We also show that new channels of radiative transitions, forbidden otherwise, open up due to positional disorder in the system, which can as well be tuned by electric field. PMID:27035321

  6. Evidence for near-infrared photoluminescence of nitrogen vacancy centers in 4 H -SiC

    NASA Astrophysics Data System (ADS)

    Zargaleh, S. A.; Eble, B.; Hameau, S.; Cantin, J.-L.; Legrand, L.; Bernard, M.; Margaillan, F.; Lauret, J.-S.; Roch, J.-F.; von Bardeleben, H. J.; Rauls, E.; Gerstmann, U.; Treussart, F.

    2016-08-01

    We present evidence of near-infrared photoluminescence (PL) signature of nitrogen vacancy centers (NCVSi) - in silicon carbide (SiC). This center exhibits an S =1 ground state spin similar to the NV- center in diamond. We have performed photoluminescence excitation measurements at cryogenic temperature and demonstrated efficient photoexcitation of distinct photoluminescence from (NCVSi)- in 4 H -SiC. Furthermore, by correlating the energies of measured zero phonon lines (ZPLs) with theoretical values derived from hybrid density functional theory each of the ZPLs has been associated to the respective occupation of hexagonal (h ) and quasicubic (k ) lattice sites in close analogy to neutral divacancy centers (VCVSi) 0 in the same material. Finally, with the appropriate choice of excitation energy we demonstrated the selective excitation of (NCVSi) - PL with no contamination by (VCVSi) 0 PL, thereby opening the way towards the optical detection of (NCVSi) - electron spin resonance.

  7. Preparation and photoluminescence properties of porous silicon

    NASA Astrophysics Data System (ADS)

    Chen, Zhiwei; Xu, Zhimou

    2009-08-01

    There are many preparation methods of porous silicon(PS), such as electrochemical etching(ECE), photochemical etching, chemical etching and so on. ECE, also known as anodic etching, is more common among these methods. A lot of holes are given priority to be etched on the surface of silicon. The top and vertical aspects of the holes are easily etched while horizontal aspects wall of the holes are quiet different, and then tree-like or sponge-like porous structure is formed. In this paper, we obtained porous structure on the surface of silicon using lithography and dry etching method. The diameter of the hole was 2μm or 6μm. The etching depth of the samples was about 70nm, 140nm and 260nm. Photoluminescence (PL) phenomenon was observed by using light of 270nm, 280nm, 330nm, 455nm and 460nm wavelength to excite the samples. The results showed that PL intensity was the best when excitation wavelength was 270nm or 280nm, compared with 330nm, 455nm and 460nm. From PL analysis of all samples, It exists three emission peaks about at 372nm, 425nm and 473nm. When the diameter of the PS was the same, it was found that PS with etching depth at 140nm was more efficient. It means that PL intensity of the was better than other samples when the etching depth was 140nm. Likewise, samples of which the diameter was 2μm has much better PL than that of the other samples.

  8. Photoluminescence Imaging of Large-Grain CdTe for Grain Boundary Characterization

    SciTech Connect

    Johnston, Steve; Allende Motz, Alyssa; Reese, Matthew O.; Burst, James M.; Metzger, Wyatt K.

    2015-06-14

    In this work, we use photoluminescence (PL) imaging to characterize CdTe grain boundary recombination. We use a silicon megapixel camera and green (532 nm) laser diodes for excitation. A microscope objective lens system is used for high spatial resolution and a field of view down to 190 um x 190 um. PL images of large-grain (5 to 50 um) CdTe samples show grain boundary and grain interior features that vary with processing conditions. PL images of samples in the as-deposited state show distinct dark grain boundaries that suggest high excess carrier recombination. A CdCl2 treatment leads to PL images with very little distinction at the grain boundaries, which illustrates the grain boundary passivation properties. Other process conditions are also shown, along with comparisons of PL images to high spatial resolution time-resolved PL carrier lifetime maps.

  9. Photoluminescence study of p-type CdGeAs2 ordered semiconductor crystals

    NASA Astrophysics Data System (ADS)

    McCrae, J. E.; Hengehold, R. L.; Yeo, Y. K.; Ohmer, M. C.; Schunemann, P. G.

    1997-01-01

    Results of a photoluminescence (PL) study as a function of excitation laser power, sample temperature, crystal orientation, and polarization are reported for the nonlinear optical material CdGeAs2. One broad weak PL peak near 0.38 eV, and another somewhat narrower and often far brighter PL peak near 0.55 eV were found at 4 K. The high energy PL peak shifts first towards lower, then higher, and back to lower energies again as the temperature increases from 2.2 to 295 K. This high energy peak is attributed to donor-acceptor pair dominant transitions at low temperatures, but it is attributed to band-to-band dominant transitions at higher temperatures. Strongly polarized PL was observed with the E field of the PL parallel to the material's c axis, and a polarization ratio as high as 6:1 was obtained.

  10. Practical photoluminescence and photoreflectance spectroscopic system for optical characterization of semiconductor devices

    NASA Astrophysics Data System (ADS)

    Ho, Ching-Hwa; Huang, Kuo-Wei; Lin, Yu-Shyan; Lin, Der-Yuh

    2005-05-01

    We present a practical experimental design for performing photoluminescence (PL) and photoreflectance (PR) measurements of semiconductors with only one PL spectroscopic system. The measurement setup is more cost efficient than typical PL-plus-PR systems. The design of the experimental setup of the PL-PR system is described in detail. Measurements of two actual device structures, a high-electron-mobility transistor (HEMT) and a double heterojunction-bipolar transistor (DHBT), are carried out by using this design. The experimental PL and PR spectra of the HEMT device, as well as polarized-photoreflectance (PPR) spectra of the DHBT structure, are analyzed in detailed and discussed. The experimental analyses demonstrate the well-behaved performance of this PL-PR design.

  11. Investigation of electrical and optothermal properties of Si-doped GaSb epitaxial layers by the Hall effect, PL measurement and photothermal deflection spectroscopy

    NASA Astrophysics Data System (ADS)

    Abroug, S.; Saadallah, F.; Genty, F.; Yacoubi, N.

    2009-11-01

    The aim of this work is to investigate the influence of Si-doping on the optical, thermal and electrical properties of GaSb epitaxial layers. Such an influence was quantified through photoluminescence (PL), mirage effect (photothermal spectroscopy) and Hall effect measurements. Several GaSb samples, grown by Molecular Beam Epitaxy (MBE) on (100)-oriented GaAs semiinsulating substrates, with different Si-doping levels ranging from 4.95 × 1016at .cm-3 up to 8.11.1019 at .cm-3 were tested. As a comparison, the same measurements were also performed on a GaSb non intentionally doped layer. The Hall effect data shows a monotonic decrease in carrier mobility when the hole concentration increase. The effect of band-to-band, band-impurity transitions on the PL gap E0 and the influence of high impurity concentration on the PL and absorption spectra have been also studied. Finally, the optical absorption changes induced by Si-doping on GaSb samples were investigated by photothermal deflection. It was shown that this technique allows a very precise deduction of the real interband gap energy of a semiconductor material as GaSb. Thermal conductivities were also deduced from the photothermal deflection measurements. The found values are very low due to the thermal resistivity of the layer-substrate interface but also due to the lattice-mismatch between GaSb epilayers and the GaAs substrate. However, the contribution of the free carriers to the thermal conductivity, with a high p-doping level (p > 1019cm-3), could be highlighted.

  12. Photoluminescence Imaging Characterization of Thin-Film InP

    SciTech Connect

    Johnston, Steve; Allende Motz, Alyssa; Moore, James; Zheng, Maxwell; Javey, Ali; Bermel, Peter

    2015-06-14

    Indium phosphide grown using a novel vapor-liquid-solid method is a promising low-cost material for III-V single-junction photovoltaics. In this work, we characterize the properties of these materials using photoluminescence (PL) imaging, time-resolved photoluminescence (TRPL), and microwave-reflection photoconductive decay (u-PCD). PL image data clearly shows the emergence of a self-similar dendritic growth network from nucleation sites, while zoomed-in images show grain structure and grain boundaries. Single photon TRPL data shows initial surface-dominated recombination, while two-photon excitation TRPL shows a lifetime of 10 ns. Bulk carrier lifetime may be as long as 35 ns as measured by u-PCD, which can be less sensitive to surface recombination.

  13. Spatially resolved photoluminescence spectroscopy of quantum dots

    NASA Astrophysics Data System (ADS)

    Dybiec, Maciej

    Recent advancements in nanotechnology create a need for a better understanding of the underlying physical processes that lead to the different behavior of nanoscale structures in comparison to bulk materials. The influence of the surrounding environment on the physical and optical properties of nanoscale objects embedded inside them is of particular interest. This research is focused on the optical properties of semiconductor quantum dots which are zero-dimensional nanostructures. There are many investigation techniques for measuring the local parameters and structural characteristics of Quantum Dot structures. They include X-ray diffraction, Transmission Electron Microscopy, Wavelength Dispersive Spectroscopy, etc. However, none of these is suitable for the study of large areas of quantum dots matrices and substrates. The existence of spatial inhomogeneity in the quantum dots allows for a deeper and better understanding of underlying physical processes responsible in particular for the observed changes in photoluminescence (PL) characteristics. Spectroscopic PL mapping can reveal areas of improved laser performance of InAs - InGaAs quantum dots structures. Establishing physical mechanisms responsible for two different types of spatial PL inhomogeneity in InAs/InGaAs quantum dots structures for laser applications was the first objective of this research. Most of the bio-applications of semiconductor quantum dots utilize their superior optical properties over organic fluorophores. Therefore, optimization of QD labeling performance with biomolecule attachment was another focus of this research. Semiconductor quantum dots suspended in liquids were investigated, especially the influence of surrounding molecules that may be attached or bio-conjugated to the quantum dots for specific use in biological reactions on the photoluminescence spectrum. Provision of underlying physical mechanisms of optical property instability of CdSe/ZnS quantum dots used for biological

  14. Compositional variation of photoluminescence from Mn doped MgAl2O4 spinel

    NASA Astrophysics Data System (ADS)

    Sakuma, Takashi; Minowa, Shunsuke; Katsumata, Toru; Komuro, Shuji; Aizawa, Hiroaki

    2014-11-01

    Spinel (MgAl2O4) crystals doped with 1.0% Mn have been grown by floating zone (FZ) technique with various Mg compositions, x = MgO/Al2O3, from 0.2 to 1.0. Compositional variations of photoluminescence are evaluated for a fluorescence thermometer application using crystals grown. Strong photoluminescence (PL) peak is observed at λ from 512 to 520 nm from the crystals grown from compositions, x, from 0.3 to 1.0. Peak wavelength of PL increases linearly from 512 to 520 nm with x. Weak PL peaking at λ = 750 nm is also observed from the specimens. Compositional variations of PL are considered to be due to the variation of crystal field surrounding the Mn2+ ions. The variation of crystal field strength agrees with the compositional variation of lattice constant.

  15. Photoluminescence investigations of defects introduced during processing of mercuric iodide nuclear detectors

    NASA Astrophysics Data System (ADS)

    James, R. B.; Bao, X. J.; Schlesinger, T. E.; Cheng, A. Y.; Ortale, C.; van den Berg, L.

    1992-11-01

    Low-temperature photoluminescence (PL) spectroscopy was performed on a variety of HgI 2 samples to determine the effects of chemical etching with Kl and HNO 3 solutions and the modifications in the PL spectra due to the presence of carbon, chromium and parylene films. These investigations reveal that the processing steps used to manufacture HgI 2 nuclear detectors can lead to the incorporation of new defects into the near-surface region of the crystals. Moreover, correlations between the photoluminescence spectra and detector performance show that some of these defects are undesirable for producing high-quality devices.

  16. Structure and Composition of Cu Doped CdSe Nanocrystals Using Soft X-ray Absorption Spectroscopy

    SciTech Connect

    Meulenberg, R W; van Buuren, T; Hanif, K M; Willey, T M; Strouse, G F; Terminello, L J

    2004-06-04

    The local structure and composition of Cu ions dispersed in CdSe nanocrystals is examined using soft x-ray absorption near edge spectroscopy (XANES). Using Cu L-edge XANES and X-ray photoelectron measurements (XPS), we find that the Cu ions exist in the Cu(I) oxidation state. We also find that the observed Cu L-edge XANES signal is directly proportional to the molar percent of Cu present in our final material. Se L-edge XANES indicates changes in the Se density of states with Cu doping, due to a chemical bonding effect, and supports a statistical doping mechanism. Photoluminescence (PL) measurements indicate the Cu ions may act as deep electron traps. We show that XANES, XPS, and PL are a powerful combination of methods to study the electronic and chemical structure of dopants in nanostructured materials.

  17. Red photoluminescence BCNO synthesized from graphene oxide nanosheets

    NASA Astrophysics Data System (ADS)

    Kang, Yue; Chu, Zeng-yong; Ma, Tian; Li, Wei-ping; Zhang, Dong-jiu; Tang, Xiao-yu

    2016-01-01

    In this paper, we demonstrate the conversion of graphene oxide (GO) into boron carbon oxynitride (BCNO) hybrid nanosheets via a reaction with boric acid and urea, during which the boron and nitrogen atoms are incorporated into graphene nanosheets. The experimental results reveal that GO is important for the photoluminescence (PL) BCNO phosphor particles. More importantly, in this system, the prepared BCNO phosphors can be used to prepare the materials needed for red light emitting diodes (LEDs).

  18. Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

    NASA Astrophysics Data System (ADS)

    Ghetmiri, Seyed Amir; Du, Wei; Margetis, Joe; Mosleh, Aboozar; Cousar, Larry; Conley, Benjamin R.; Domulevicz, Lucas; Nazzal, Amjad; Sun, Greg; Soref, Richard A.; Tolle, John; Li, Baohua; Naseem, Hameed A.; Yu, Shui-Qing

    2014-10-01

    Material and optical characterizations have been conducted for epitaxially grown Ge1-xSnx thin films on Si with Sn composition up to 10%. A direct bandgap Ge0.9Sn0.1 alloy has been identified by temperature-dependent photoluminescence (PL) study based on the single peak spectrum and the narrow line-width. Room temperature PL emission as long as 2230 nm has also been observed from the same sample.

  19. Intense photoluminescence from dried double-stranded DNA and single-walled carbon nanotube hybrid

    SciTech Connect

    Ito, M.; Kobayashi, T.; Ito, Y.; Hayashida, T.; Nii, D.; Umemura, K.; Homma, Y.

    2014-01-27

    Semiconducting single-walled carbon nanotubes (SWNTs) show near-infrared photoluminescence (PL) when they are individually isolated. This was an obstacle to use photonic properties of SWNTs on a solid surface. We show that SWNTs wrapped with DNA maintain intense PL under the dry conditions. SWNTs are well isolated individually by DNA even when the DNA-SWNT hybrids are agglomerated. This finding opens up application of SWNTs to photonic devices.

  20. Raman and Photoluminescence Studies of In-plane Anisotropic Layered Materials

    NASA Astrophysics Data System (ADS)

    Pant, Anupum

    This thesis presents systematic studies on angle dependent Raman and Photoluminescence (PL) of a new class of layered materials, Transition Metal Trichalcogenides (TMTCs), which are made up of layers possessing anisotropic structure within the van-der-Waals plane. The crystal structure of individual layer of MX3 compounds consists of aligned nanowire like 1D chains running along the b-axis direction. The work focuses on the growth of two members of this family - ZrS3 and TiS3 - through Chemical Vapor Transport Method (CVT), with consequent angle dependent Raman and PL studies which highlight their in-plane optically anisotropic properties. Results highlight that the optical properties of few-layer flakes are highly anisotropic as evidenced by large PL intensity variation with polarization direction (in ZrS3) and an intense variation in Raman intensity with variation in polarization direction (in both ZrS3 and TiS3). Results suggest that light is efficiently absorbed when E-field of the polarized incident excitation laser is polarized along the chain (b-axis). It is greatly attenuated and absorption is reduced when field is polarized perpendicular to the length of 1D-like chains, as wavelength of the exciting light is much longer than the width of each 1D chain. Observed PL variation with respect to the azimuthal flake angle is similar to what has been previously observed in 1D materials like nanowires. However, in TMTCs, since the 1D chains interact with each other, it gives rise to a unique linear dichroism response that falls between 2D and 1D like behavior. These results not only mark the very first demonstration of high PL polarization anisotropy in 2D systems, but also provide a novel insight into how interaction between adjacent 1D-like chains and the 2D nature of each layer influences the overall optical anisotropy of Quasi-1D materials. The presented results are anticipated to have impact in technologies involving polarized detection, near-field imaging

  1. Absorption edge and the refractive index dispersion of carbon-nickel composite films at different annealing temperatures

    NASA Astrophysics Data System (ADS)

    Dalouji, Vali; Elahi, Seyed Mohammad; Solaymani, Shahram; Ghaderi, Atefeh

    2016-04-01

    In this paper, the optical properties of carbon-nickel films annealed at different temperatures 300, 500, 800 and 1000 ° C, with a special emphasis on the absorption edge, were investigated. The optical transmittance spectra in the wavelength range 300-1000nm were used to compute the absorption coefficient. The optical dispersion parameters were calculated according to Wemple and DiDomenico (WDD) single-oscillator model. Photoluminescence (PL) measurements of carbon-nickel films exhibit two main peaks at about 2.5 and 3.3eV which correspond to the fundamental indirect and direct gap, respectively. The field emission scanning electron microscopy (FESEM) showed that the absorption edge in the films was controlled by the nanoparticle size. The films annealed at 500 ° C have minimum indirect optical band gap and maximum disorder.

  2. Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm

    SciTech Connect

    Zhang, Pengzhan; Chen, Kunji Zhang, Pei; Fang, Zhonghui; Li, Wei; Xu, Jun; Huang, Xinfan; Dong, Hengping

    2014-07-07

    We reported the study on the photoluminescence internal quantum efficiency (PL IQE) and external quantum efficiency (PL EQE) from the amorphous silicon oxynitride (a-SiNO) films, which were fabricated by plasma-enhanced chemical vapor deposition followed by in situ plasma oxidation. We employed the direct measurement of absolute quantum efficiency within a calibrated integration sphere to obtain the PL EQE. Then, we calculated the PL IQE by combing the measured EQE and optical parameters of light extraction factor, reflectivity, and transmittance of the a-SiNO thin films. We also derived the PL QE through investigating the characteristic of the temperature dependent PL. These results show that the PL IQE as high as 60% has been achieved at peak wavelength of about 470 nm, which is much higher than that of Si nanocrystal embedded thin films.

  3. Tunable photoluminescence and spectrum split from fluorinated to hydroxylated graphene

    NASA Astrophysics Data System (ADS)

    Gong, Peiwei; Wang, Jinqing; Sun, Weiming; Wu, Di; Wang, Zhaofeng; Fan, Zengjie; Wang, Honggang; Han, Xiuxun; Yang, Shengrong

    2014-02-01

    Tunable control over the functionalization of graphene is significantly important to manipulate its structure and optoelectronic properties. Yet the chemical inertness of this noble carbon material poses a particular challenge for its decoration without forcing reaction conditions. Here, a mild, operationally simple and controllable protocol is developed to synthesize hydroxylated graphene (HOG) from fluorinated graphene (FG). We successfully demonstrate that under designed alkali environment, fluorine atoms on graphene framework are programmably replaced by hydroxyl groups via a straightforward substitution reaction pathway. Element constituent analyses confirm that homogeneous C-O bonds are successfully grafted on graphene. Rather different from graphene oxide, the photoluminescence (PL) emission spectrum of the obtained HOG becomes split when excited with UV radiation. More interestingly, such transformation from FG facilitates highly tunable PL emission ranging from greenish white (0.343, 0.392) to deep blue (0.156, 0.094). Additionally, both experimental data and density function theory calculation indicate that the chemical functionalization induced structural rearrangement is more important than the chemical decoration itself in tuning the PL emission band tail and splitting energy gaps. This work not only presents a new way to effectively fabricate graphene derivatives with tunable PL performance, but also provides an enlightening insight into the PL origin of graphene related materials.Tunable control over the functionalization of graphene is significantly important to manipulate its structure and optoelectronic properties. Yet the chemical inertness of this noble carbon material poses a particular challenge for its decoration without forcing reaction conditions. Here, a mild, operationally simple and controllable protocol is developed to synthesize hydroxylated graphene (HOG) from fluorinated graphene (FG). We successfully demonstrate that under designed

  4. Growth and Photoluminescence of Crystalline SILICON(1-X) Germanium(x)/silicon and SILICON(1-X-Y) Germanium(x) Carbon(y)/silicon

    NASA Astrophysics Data System (ADS)

    St. Amour, Anthony Andeol

    We have measured and modeled, both analytically and numerically, the temperature dependence of the luminescence intensity in strained Si_{1-x} Ge_{x}/Si (001) heterostructures. The high-temperature (T>150 K) Si_{1-x}Ge _{x} photoluminescence (PL) intensity in high-quality material is limited by recombination at the top Si surface, and this intensity can be dramatically increased by passivating the top surface with oxide. Also, due to Auger recombination suppressing the low temperature PL, we achieved essentially constant PL intensity from 77 to 250 K at high pump power density (30 W/cm ^2). We have identified two causes for the observed difference in the temperature dependence of photo - and electroluminescence. By Rapid Thermal Chemical Vapor Deposition, we have formed device quality pseudomorphic Si_ {1-x-y}Ge_{x} C_{y} thin films on Si (001), containing up to 1.2% substitutional carbon. The band gap of these strained films, as measured by PL, increased +21 meV/%C, and we predict that the band gap of relaxed Si_{1-x-y}Ge_ {x}C_{y} decreases -20 meV/%C. Also, we have demonstrated that, for a given band gap, Si_{1-x -y}Ge_{x}C _{y} has less strain and a greater critical thickness than does Si_ {1-x}Ge_{x}. We have fabricated Si_{1-x -y}Ge_{x}C _{y} p-i-n diodes, which, for (C) < 1.0%, showed no degradation in reverse-bias leakage compared to C-free devices. The infrared absorption spectra of these diodes showed increased sub -band gap absorption as the carbon content was increased.

  5. Growth orientation dependent photoluminescence of GaAsN alloys

    NASA Astrophysics Data System (ADS)

    Han, Xiuxun; Tanaka, Tomohiro; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi; Sato, Shinichiro

    2012-01-01

    We report photoluminescence (PL) studies of both as-grown and electron-irradiated GaAsN epilayers on (311)A/B and (100) GaAs substrates. A long room-temperature (RT) PL lifetime, as well as an enhanced N incorporation, is observed in (311)B GaAsN epilayers as compared with (311)A and (100) samples. There is no direct correlation between the RT PL lifetime and the emission intensity from Ga vacancy complex detected at low temperature. The lifetime damage coefficient is relatively low for (311)B GaAsN. The irradiation-induced nonradiative recombination defects are suggested to be N- and/or As-related according to a geometrical analysis based on the tetrahedral coordination of GaAsN crystal.

  6. Phonon sidebands of photoluminescence in single wall carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Yu, Guili; Liang, Qifeng; Jia, Yonglei; Dong, Jinming

    2010-01-01

    The multiphonon-assisted photoluminescence (PL) of the single wall carbon nanotubes (SWNTs) have been studied by solving the Schrödinger equation, showing a set of phonon sidebands, both the Stokes and anti-Stokes lines, which are induced by the longitudinal optical phonon and radial breathing mode phonon. All the calculated results are in a good agreement with the recent experimental PL spectra of the SWNTs [F. Plentz, H. B. Ribeiro, A. Jorio, M. S. Strano, and M. A. Pimenta, Phys. Rev. Lett. 95, 247401 (2005)] and J. Lefebvre and P. Finnie, Phys. Rev. Lett. 98, 167406 (2007)]. In addition, it is very interesting to find in the calculated PL several additional phonon sidebands with rather weak intensities, which are caused by the exciton's coupling with two kinds of phonons, and expected to be observed in future experiments.

  7. Detection of Human Ig G Using Photoluminescent Porous Silicon Interferometer.

    PubMed

    Cho, Bomin; Kim, Seongwoong; Woo, Hee-Gweon; Kim, Sungsoo; Sohn, Honglae

    2015-02-01

    Photoluminescent porous silicon (PSi) interferometers having dual optical properties, both Fabry-Pérot fringe and photolumincence (PL), have been developed and used as biosensors for detection of Human Immunoglobin G (Ig G). PSi samples were prepared by electrochemical etching of p-type silicon under white light exposure. The surface of PSi was characterized using a cold field emission scanning electron microscope. The sensor system studied consisted of a single layer of porous silicon modified with Protein A. The system was probed with various fragments of aqueous human immunoglobin G (Ig G) analyte. Both reflectivity and PL were simultaneously measured under the exposure of human Ig G. An increase of optical thickness and decrease of PL were obtained under the exposure of human Ig G. Detection limit of 500 fM was observed for the human Ig G. PMID:26353616

  8. [Photoluminescence of nano-SiC annealed by pulse laser].

    PubMed

    Yu, Wei; He, Jie; Sun, Yun-tao; Han, Li; Fu, Guang-sheng

    2005-04-01

    Nanocrystalline silicon carbon (nc-SiC) from amorphous silicon carbon films was obtained through XeCl excimer laser annealing. The photoluminescence (PL) of the nc-SiC was analyzed at different annealing laser energy density. It was observed that PL presented a wide luminescence band from 300-600 nm in the nc-SiC films. The two main luminescence bands, situated at 398 and 470 nm respectively, are attributed to band to band and defect recombination in the 6H-SiC based on the structure changes of the nc-SiC films. The relative PL intensity of these two bands was determined by the surface state density in the nc-SiC films and their irradiative life PMID:16097671

  9. Summary of field operations Powerline Wells PL-1, PL-2, PL-3

    SciTech Connect

    Foutz, W.L.

    1996-03-01

    This report summarizes field operations and hydrogeologic data obtained during installation of the Powerline monitoring/test wells near the western boundary of Kirtland Air Force Base. These wells were installed in 1994 as part of the Site-Wide Hydrogeologic Characterization Project saturated zone investigation. The Site-Wide Hydrogeologic Characterization Project is part of Sandia National Laboratories, New Mexico, Environmental Restoration Project. Three wells were drilled and completed at this location, and named PL-1, PL-2, and PL-3. They are located northwest of Tech Area 3, and are named after a high-voltage powerline located just south of the wells. The objectives of the Powerline wells were to determine the depth to water, complete 2 water table wells and a deeper Santa Fe Group well, to determine the geologic provenance of Santa Fe Group sediments at this location, and to obtain background core samples for radiological analysis. During these field operations, important subsurface hydrogeologic data were obtained. These data include drill cuttings and lithologic descriptions, core samples with background analytical data, geophysical logs, water quality parameters, and water levels. Aquifer tests at the Powerline location will generate data that may yield information on anisotropy in the Santa Fe Group and constrain numerical modeling results that indicate that there is a major northward component of groundwater flow from McCormick Ranch and Tech Area 3 test sites toward City of Albuquerque and KAFB well fields.

  10. Effects of natural oxidation on the photoluminescence properties of Si nanocrystals prepared by pulsed laser ablation

    NASA Astrophysics Data System (ADS)

    Xu, Yanmei; Han, Yinghui

    2014-07-01

    In this work, Si nanocrystals (Si-NCs) have been prepared by pulsed laser ablation technique in dichloromethane, and the microstructure and photoluminescence (PL) properties of the Si-NCs before and after natural oxidation were investigated. Transmission electron microscopy and Raman results show that the average diameter of the Si-NCs is 2.42 nm in the dichloromethane solution. Blue-violet PL with a lifetime of 4.6 ns is observed at room temperature, and the PL peak shifts toward longer wavelength with the red shift of excitation wavelength. The PL excitation spectrum indicates that the bandgap of the Si-NCs in solution is 2.64 eV, which confirms that the blue-violet PL originates from interband transition of Si-NCs caused by quantum confinement effect. The PL peak red shifts to 607 nm after natural oxidation, and the peak lifetime of which is slow down to 13.1 μs. The fixed PL peak excited by different wavelengths and the slow PL decay time indicate that interface defects become the main PL mechanism after natural oxidation. The results will add new information for understanding the PL mechanism of Si-NCs in different environments.

  11. Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study

    NASA Astrophysics Data System (ADS)

    Kopaczek, J.; Linhart, W. M.; Baranowski, M.; Richards, R. D.; Bastiman, F.; David, J. P. R.; Kudrawiec, R.

    2015-09-01

    Photoreflectance (PR), photoluminescence (PL) and time-resolved PL were applied to study the optical properties, particularly the localized and delocalized states and carrier dynamics, in GaAs1-xBix/GaAs quantum wells. With increasing Bi concentration the ground state transition (i.e., the transition between the first heavy hole and the first electron subband) red shifts due to Bi-related reduction of the GaAs1-xBix energy gap. Additionally, the transition related to the excited states in the quantum wells is clearly observed for the sample with high Bi concentration of 5.6%, confirming these quantum wells are type I. The PL measurements show the S-shape behavior and indicate the strong localization effect below 150 K for all measured samples, while the PL emission above 150 K is related to delocalized states. The localized character of emission at low temperatures is confirmed by time-resolved PL studies. At 10 K the decay time has strong spectral dispersion (i.e. the decay time increases from ˜10 ns to ˜400 ns going from the high to low energy side of the PL peak). This dispersion disappears above 190 K. At room temperature the decay time is in the order of a few ns.

  12. Raman and photoluminescence mapping of InxGa1-xN (x ˜ 0.4) at high pressure: Optical determination of composition and stress

    NASA Astrophysics Data System (ADS)

    Gkrana, V.; Filintoglou, K.; Arvanitidis, J.; Christofilos, D.; Bazioti, C.; Dimitrakopulos, G. P.; Katsikini, M.; Ves, S.; Kourouklis, G. A.; Zoumakis, N.; Georgakilas, A.; Iliopoulos, E.

    2014-09-01

    The pressure response of a polar wurtzite InxGa1-xN (x = 0.37) film epitaxially grown on a GaN/sapphire template was studied by means of combined Raman and photoluminescence (PL) mappings. The pressure slopes of the Raman peaks (∂ω/∂P ˜ 4.7 cm-1.GPa-1) of the studied alloy are indicative of its intermediate stiffness between the end members of the InxGa1-xN system. The data analysis suggests that in our experiments the obtained slopes have marginal contribution, if any, from the substrate. Furthermore, the similarity of the ambient pressure value of the PL peak energy (˜1.97 eV) and its pressure slope (∂EPL/∂P ˜ 30 meV.GPa-1) with those obtained by absorption measurements implies that PL can be used to follow the pressure evolution of the energy bandgap. Finally, we demonstrate that all-optical characterization of the composition and residual stress of InxGa1-xN samples is feasible.

  13. Enhanced photoluminescence properties of Sm3+ ions in Cu+ and Sn2+ co-doped P2O5:BaO glass

    NASA Astrophysics Data System (ADS)

    Jiménez, José A.

    2014-12-01

    Luminescent glasses activated with Sm3+ ions are of current interest given their potential for a wide range of photonic applications. In this work, Sm3+-containing P2O5:BaO glasses are prepared by a simple melt-quench method, and the influence of CuO and SnO co-doping on Sm3+ photoluminescence (PL) is investigated. Optical absorption, solid-state 31P nuclear magnetic resonance spectroscopy, and PL spectroscopy are employed in the assessment of material optical and structural properties. The data indicates that monovalent copper ions and twofold-coordinated Sn centers are successfully stabilized in the matrix and both species can enhance the orange-red emission of Sm3+ ions. The optical properties of the material after heat treatment have been also assessed. Results indicate the chemical reduction of ionic copper via Sn2+ ultimately producing Cu nanoparticles as evidenced by the surface plasmon resonance. As a result, Sm3+ PL diminishes consistent with an excitation energy transfer to plasmonic Cu particles, i.e. the "plasmonic diluent" effect prevails.

  14. Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

    SciTech Connect

    Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgström, Magnus T.; Hessman, Dan; Samuelson, Lars

    2013-12-04

    We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

  15. Nonlinear photoluminescence properties of trions in hole-doped single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Akizuki, Naoto; Iwamura, Munechiyo; Mouri, Shinichiro; Miyauchi, Yuhei; Kawasaki, Tomohiro; Watanabe, Hiroshi; Suemoto, Tohru; Watanabe, Kouta; Asano, Kenichi; Matsuda, Kazunari

    2014-05-01

    We studied the excitation density dependence of photoluminescence (PL) spectra of excitons and trions (charged excitons) in hole-doped single-walled carbon nanotubes. We found that the PL intensity of trions exhibited a strong nonlinear saturation behavior as the excitation density increased, whereas that of excitons exhibited a weak sublinear behavior. The strong PL saturation of trions is attributed to depletion of doped holes that are captured by excitons in the formation processes. Moreover, the effective radiative lifetime of a trion was evaluated to be approximately 20 ns.

  16. Photoluminescence Study of Interdot Carrier Transfer on Strain-relaxed InAs Quantum Dots

    SciTech Connect

    Chiang, Chen-Hao; Chang, You-Cheng; Hsieh, Meng-Chien; Yang, Cheng-Hong; Wang, Jia-Feng; Chen, Jenn-Fang; Wu, Yue-Han; Chang, Li

    2011-12-23

    Photoluminescence (PL) properties of the strain relaxed InAs quantum dots (QDs) are studied as a function of temperature from 10 to 300 K. Two groups of QDs induced by strain relaxation are observed in the PL spectra. The PL peak position of the relaxed (non-relaxed) QDs locates at a higher (lower) energy. TEM image prove QDs are distributed into two groups and indicate the QDs relax the strain by diffusing indium to GaAs. In the 120-200 K temperature range, there are abnormal temperature behaviors attributed to the carrier transfer from the relaxed to non-relaxed QDs.

  17. Time-resolved photoluminescence properties of semiconductor quantum dot superlattices of different microcrystal shapes

    SciTech Connect

    Chae, Weon-Sik Choi, Eunjin; Ku Jung, Yun; Jung, Jin-Seung; Lee, Jin-Kyu

    2014-04-14

    We report time-resolved photoluminescence properties on semiconductor quantum dot (QD) superlattices (SLs) using PL lifetime imaging microscopy at a single particle level. PL lifetime imaging technique clearly reveals that different shaped QD SL microcrystals have different time-resolved PL characteristics. The faceted SL microcrystals consisted of well-organized QDs showed faster recombination rates than those of the spherical microparticles including randomly organized QDs, which can be explained by the different degree of energetic couplings among component QDs due to different packing fraction.

  18. Interference effects on room-temperature photoluminescence spectra of GaAs/Ge space solar cells

    SciTech Connect

    Timo, G.L.; Flores, C.

    1994-12-31

    This paper describes a new method, based on room-temperature photoluminescence (PL), for time-saving and non-destructive characterization of thin emitter GaAs/Ge solar cells used for space application. It has been shown that the interference phenomena produced between the PL directly escaping from the surface and the PL reflected on the GaAs/Ge interface can provide information on the doping level, thickness and uniformity of the GaAs structure deposited on Ge substrates. This method can be utilized for the quality control of mass-production of GaAs/Ge solar cells for space application.

  19. Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

    SciTech Connect

    Xu, Ming Jaffré, Alexandre Alvarez, José Kleider, Jean-Paul Boutchich, Mohamed; Jittrong, Apichat; Chokamnuai, Thitipong; Panyakeow, Somsak; Kanjanachuchai, Songphol

    2015-02-27

    We utilized temperature dependent photoluminescence (PL) techniques to investigate 1, 3 and 5 stack InGaAs quantum dots (QDs) grown on cross-hatch patterns. PL mapping can well reproduce the QDs distribution as AFM and position dependency of QD growth. It is possible to observe crystallographic dependent PL. The temperature dependent spectra exhibit the QDs energy distribution which reflects the size and shape. The inter-dot carrier coupling effect is observed and translated as a red shift of 120mV on the [1–10] direction peak is observed at 30K on 1 stack with regards to 3 stacks samples, which is assigned to lateral coupling.

  20. Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence: Preprint

    SciTech Connect

    Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

    2011-07-01

    It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, in-line tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

  1. Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

    NASA Astrophysics Data System (ADS)

    Xu, Ming; Jaffré, Alexandre; Alvarez, José; Kleider, Jean-Paul; Jittrong, Apichat; Chokamnuai, Thitipong; Panyakeow, Somsak; Boutchich, Mohamed; Kanjanachuchai, Songphol

    2015-02-01

    We utilized temperature dependent photoluminescence (PL) techniques to investigate 1, 3 and 5 stack InGaAs quantum dots (QDs) grown on cross-hatch patterns. PL mapping can well reproduce the QDs distribution as AFM and position dependency of QD growth. It is possible to observe crystallographic dependent PL. The temperature dependent spectra exhibit the QDs energy distribution which reflects the size and shape. The inter-dot carrier coupling effect is observed and translated as a red shift of 120mV on the [1-10] direction peak is observed at 30K on 1 stack with regards to 3 stacks samples, which is assigned to lateral coupling.

  2. The evolution of microstructure and photoluminescence of SiCN films with annealing temperature

    SciTech Connect

    Du Xiwen; Fu Yang; Sun Jing; Yao Pei

    2006-05-01

    Silicon carbonitride (SiCN) films were deposited by radio-frequency magnetron sputtering and then annealed at different temperatures from 1100 to 1300 deg. C in hydrogen atmosphere. The as-deposited films and films annealed at 1100 deg. C did not show photoluminescence (PL), whereas strong PL peaks appeared at 355 and 469 nm after annealing at 1200 and 1300 deg. C. X-ray diffraction, transmission electron microscope, and Fourier transform infrared spectrometer results show that the enhancement of PL properties is due to the change of microstructure and composition.

  3. Effects of surface oxide formation on germanium nanowire band-edge photoluminescence

    SciTech Connect

    Minaye Hashemi, Fatemeh Sadat; Laboratoire des Materiaux Semiconducteurs, Ecole Polytechnique Federale de Lausanne, 1015 Lausanne ; Thombare, Shruti; Brongersma, Mark L.; Morral, Anna Fontcuberta i; McIntyre, Paul C.; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305

    2013-06-24

    The effect of intentional surface oxide formation on band-edge photoluminescence (PL) of Ge nanowires was investigated. Thermal oxidation in molecular O{sub 2} was used to produce a surface oxide layer on assemblies of single crystal nanowires grown by the vapor-liquid-solid method. With increasing oxidation of the wires, the band-edge PL associated with the indirect gap transition becomes more intense. X-ray photoelectron spectroscopy confirms the formation of an increasingly GeO{sub 2}-like surface oxide under annealing conditions that enhance the indirect-gap PL, consistent with surface oxide passivation of nonradiative recombination centers initially present on the nanowire surface.

  4. Influence of Au nanoparticles on the photoluminescent and electrical properties of Bi{sub 3.6}Eu{sub 0.4}Ti{sub 3}O{sub 12} ferroelectric thin films

    SciTech Connect

    Su, Li; Qin, Ni E-mail: stsbdh@mail.sysu.edu.cn; Xie, Wei; Fu, Jianhui; Bao, Dinghua E-mail: stsbdh@mail.sysu.edu.cn

    2014-07-21

    Au-doped Bi{sub 3.6}Eu{sub 0.4}Ti{sub 3}O{sub 12} (BET) thin films were prepared on fused silica and Pt/Ti/SiO{sub 2}/Si substrates by a chemical solution deposition method. The existence of Au nanoparticles (NPs) has been confirmed by X-ray diffraction, X-ray photoelectron spectroscopy, and transmission electron microscope analysis. Enhanced photoluminescence (PL) of Eu{sup 3+} ions was obtained in a wide range of Au doping level. Role of the Au NPs in the PL enhancement was investigated by means of optical absorption, excitation, and emission spectra, as well as decay lifetime measurements. The results indicated that the intra-4f transition of Eu{sup 3+} ions can be intensively activated by the coupling of the charge transfer band of BET with the {sup 5}D{sub 0} state of Eu{sup 3+} ions. The influence of Au NPs on the PL properties of Eu{sup 3+} ions in the present thin films was attributed to the band bending at Au/BET interface and the localized surface plasma resonance absorption of Au NPs in the visible light region. The dielectric and ferroelectric properties of Au-doped BET thin films were investigated as well.

  5. Magneto-photoluminescence of InAs/InGaAs/InAlAs quantum well structures

    SciTech Connect

    Terent'ev, Ya. V.; Danilov, S. N.; Loher, J.; Schuh, D.; Bougeard, D.; Weiss, D.; Ganichev, S. D.; Durnev, M. V.; Tarasenko, S. A.; Mukhin, M. S.; Ivanov, S. V.

    2014-03-10

    Photoluminescence (PL) and highly circularly polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum efficiency of the radiative recombination in these QWs. The sign of the circular polarization indicates that it stems from the spin polarization of heavy holes caused by the Zeeman effect. Although in magnetic field the PL lines are strongly circularly polarized, no energy shift between the counter-polarized PL lines was observed. The results suggest the electron and the hole g-factor to be of the same sign and close magnitudes.

  6. Effects of water molecules on photoluminescence from hierarchical peptide nanotubes and water probing capability.

    PubMed

    Wang, Minjie; Xiong, Shijie; Wu, Xinglong; Chu, Paul K

    2011-10-01

    Photoluminescence (PL) spectra reveal that deficiency of water molecules in the channel cores of bioinspired hierarchical diphenylalanine ( L -Phe- L -Phe, FF) peptide nanotubes (PNTs) not only modifies the bandgap of the subnanometer crystalline structure formed by the self-assembly process, but also induces a characteristic ultraviolet PL peak the position of which is linearly proportional to the number of water molecules in the PNTs. Addition or loss of water molecules gives rise to the UV PL redshift or blueshift. Density functional theory calculation also confirms that addition of water molecules to the PNTs causes splitting of the valence-band peak, which corresponds to the shift and splitting of the observed UV PL peak. Water molecules play an important role in the biological properties of FF PNTs and the results demonstrate that the PL spectra can be used to probe the number of water molecules bonded to the FF molecules. PMID:22049551

  7. Plasmon enhanced linear and nonlinear photoluminescence in planar nanoparticle arrays (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Walsh, Gary F.; Dal Negro, Luca

    2015-09-01

    Light emission from metal nanoparticles has potential appications as a highly sensitive refractive index detector. In order for this protential to be realized the mechanics of plasmon enhanced photoluminescence (PL) in planar nanoparticle arrays must be understude. We present an experimental exploreation of emission spectra and realitive efficiency of gold PL in nanoplasmonic arrays. We demonstrate tunability of metal PL by nanoparticle size and discover the critical role of near-field interparticle coupling on emission efficiency. We show that direct excition of plasmon resonances by photoexcited electron-hole pairs is the primary contributer to the metalic nanoparticle emission spectrum. We additionally show that emission is quenched by near-field interactions between nanoparticles leading to spectral broading by increased non-radiative plasmon decay. Finally, we show a correlation between plasmon life-time and PL efficiency. We explore this phenominan for both linear and nonlinear PL. Experimental results are supported by numerical simulations of plasmon life-time.

  8. Photoluminescence of pyrochlore phase in SrBi2Ta2O9 thin films

    NASA Astrophysics Data System (ADS)

    Wang, Y. P.; Ning, H. F.; Zhou, L.; Shen, J. K.; Liu, Z. G.

    2003-07-01

    SrBi2Ta2O9 thin films were prepared by pulsed laser deposition at different substrate temperatures. Photoluminescence (PL) has been detected at room temperature from the pyrochlore phase in the SrBi2Ta2O9 film deposited at 850 °C. The PL shows five luminescence bands of 330, 365, 407, 490, and 600 nm. And the PL excitation shows six excitation bands of 278, 330, 365, 407, 490, and 600 nm. The one-to-one correspondence of PL and PL excitation spectra reveals a band-to-band excitation and a multienergy-gap structure in the pyrochlore phase in SrBi2Ta2O9 films.

  9. Structural order effect in visible photoluminescence properties of nanocrystalline Si :H thin films

    NASA Astrophysics Data System (ADS)

    Chen, H.; Shen, W. Z.; Wei, W. S.

    2006-03-01

    We report room-temperature visible photoluminescence (PL) properties of highly ordered hydrogenated nanocrystalline Si(nc-Si :H) with good electrical performance. The PL profiles can be well reproduced by the model of Islam and Kumar [J. Appl. Phys. 93, 1753 (2003)], incorporating the effects of quantum confinement and localized surface states, as well as a log-normal crystallite size distribution. Raman, PL, and electrical results consistently reveal that improvement of structural order within nc-Si :H is beneficial to enhance the PL efficiency. Owing to adequate order, strong visible PL and high electron mobility can coexist in nc-Si :H, which may provide possibilities in Si-based optoelectronics.

  10. Defect passivation induced strong photoluminescence enhancement of rhombic monolayer MoS2.

    PubMed

    Su, Weitao; Jin, Long; Qu, Xiaodan; Huo, Dexuan; Yang, Li

    2016-05-18

    Growing high quality monolayer MoS2 with strong photoluminescence (PL) is essential to produce light-emitting devices on the atomic scale. In this study we show that rhombic monolayer MoS2 with PL intensity 8 times stronger than those of chemical vapour deposition (CVD)-grown triangular and mechanically exfoliated (ME) monolayer MoS2 can be prepared by using CVD. Both Raman and PL measurements indicate low density of defects in rhombic monolayer MoS2 with enhanced PL intensity. Density functional theory (DFT) calculations show that passivation of defects in MoS2 removes trapping gap states, which may finally result in PL enhancement. PMID:27152375

  11. Time-resolved photoluminescence study of m-plane GaN thin films

    NASA Astrophysics Data System (ADS)

    Pan, Ji-Hong; Jang, Der-Jun; Quadir, Shaham; Lo, Ikai

    2014-03-01

    The optical properties and the carrier relaxation of GaN thin films were studied by time-resolved photoluminescence apparatus. The m-plane GaN thin films were grown on GaN buffer layer and γ-LiAlO2 substrates by molecular beam epitaxy with variation of N/Ga ratio. We found that the PL associated with defect is prominent for large N/Ga ratio due to the increasing of stacking faults. The intensity of PL perpendicular to the GaN [0001] direction is more intensive than that of PL parallel to the perpendicular to the GaN [0001] direction. The PL decay times exhibit dependence on the direction of the PL polarizations.

  12. Absorbance and Photoluminescence of Si, Ge, and MoS{sub 2} Nanoparticles Studied by Liquid Chromatography

    SciTech Connect

    Provencio, P.P.; Samara, G.A.; Wilcoxon, J.P,

    1999-07-12

    The authors have successfully synthesized highly crystalline, size-selected indirect band-gap nanocrystals (NC) of Si, Ge and MoS{sub 2} in the size range 2-10 nm in inverse micelles and studied their optical absorption and photoluminescence (PL) properties using liquid chromatography. Room temperature, visible PL from these nanocrystals was demonstrated in the range 700-350 nm (1.8-3.5 eV). their experimental results are interpreted in terms of the corresponding electronic structure of the bulk materials and it is demonstrated that these nanocrystals retain bulk-like electronic character to sizes as small as 2 nm, but the absorbance energies are strongly blue-shifted by quantum confinement. The experimental results on Si-NCs are also compared to earlier work on Si clusters grown by other techniques and to the predictions of various model calculations. Currently, the wide variations in the theoretical predictions of the various models along with considerable uncertainties in experimental size determination for clusters less than 3-4 nm, make it difficult to select the best model.

  13. A co-precipitation preparation, crystal structure and photoluminescent properties of Er5%:Gd2O3 nanorods

    NASA Astrophysics Data System (ADS)

    Boopathi, G.; Raj, S. Gokul; Kumar, G. Ramesh; Mohan, R.

    2015-06-01

    An inexpensive preparation method is being reported for obtaining erbium doped gadolinium oxide (Er5%:Gd2O3) nanoscale rods. The elongated nanoscale systems, as-formed through a co-precipitation process, are characterized by using X-ray powder diffraction (XRD) patterns, scanning electron microscopy (SEM) with energy dispersive X-ray (EDX) mapping, Ultra Violet-visible (UV-vis.) absorption spectroscopy and photoluminescence (PL) spectroscopy. In addition, the Williamson-Hall (W-H) plot is also performed to distinguish the effect of crystalline size-induced broadening and strain-induced broadening at full-width at half-maximum (FWHM) of the XRD profile. The XRD patterns of as-formed and calcined products show that the phase confirmation. As revealed from the SEM micrographs, the morphology of the products show that the rod-like nanoparticles. The EDX micrographs show that the presence of elements in our samples. The band gap values in calcined samples are found to be in the range of 3.569 eV. Upon 230 nm excitation on calcined samples, three broad emission peaks are observed from PL studies. The possible mechanism for the formation of Er5%:Gd2O3 nanorods is briefly discussed.

  14. Investigations on local structures in new Bi2-2xLa2xUO6 (x = 0-0.05) solid solutions: a combined XRD, EXAFS, PL and EPR study.

    PubMed

    Sanyal, Kaushik; Pathak, Nimai; Yadav, Ashok Kumar; Kanrar, Buddhadev; Kadam, Ramakant Mahadeo; Jha, Shambhu Nath; Bhattacharya, Dibyendu; Misra, N L

    2016-05-01

    La doped Bi2UO6 solid solutions of the general formula Bi2-2xLa2xUO6 (x = 0-0.05) were prepared by the solid state reaction of Bi2O3, La(OH)3 and U3O8 in a stoichiometric ratio. These solid solutions were characterized by X-ray diffraction, Extended X-ray Absorption Fine Structure (EXAFS) and X-ray Absorption Near Edge Spectroscopy (XANES) studies. It was found that La goes to the Bi sites of the Bi2UO6 lattice during the formation of these solid solutions. For further confirmation, a photoluminescence (PL) study on an iso-structural Bi1.96Eu0.04UO6 was performed, and this supports the above observation. The solid solutions were also probed by EPR studies. The PL and EPR studies suggest that there are doping induced oxygen vacancies in these solid solutions. PMID:27052597

  15. Structural Order-Disorder Transformations Monitored by X-Ray Diffraction and Photoluminescence

    ERIC Educational Resources Information Center

    Lima, R. C.; Paris, E. C.; Leite, E. R.; Espinosa, J. W. M.; Souza, A. G.; Longo, E.

    2007-01-01

    A study was conducted to examine the structural order-disorder transformation promoted by controlled heat treatment using X-ray diffraction technique (XRD) and photoluminescence (PL) techniques as tools to monitor the degree of structural order. The experiment was observed to be versatile and easily achieved with low cost which allowed producing…

  16. Probing the molecular character of periodic mesoporous organosilicates via photoluminescence of Lewis acid-base adducts.

    PubMed

    Thiel, Indre; Fedorov, Alexey; Verel, Rene; Yakunin, Sergii; Kovalenko, Maksym V; Copéret, Christophe

    2016-05-18

    Photoluminescence decay was used as a structure-sensitive method to compare the distribution of emitting sites in periodic mesoporous organosilicates (PMOs) to their respective molecular analogs. The observed close similarity of PL decays confirms the molecular nature of PMOs and high homogeneity of emitting sites. PMID:27156706

  17. Low-temperature photoluminescence analysis of CdTeSe crystals for radiation-detector applications

    SciTech Connect

    YANG G.; Roy, U. N.; Bolotnikov, A. E.; Cui, Y.; Camarda, G.S.; Hossain, A.; and James, R. B.

    2015-10-05

    Goal: Understanding the changes of material defects in CdTeSe following annealing. Experimental results and discussions: Infrared (IR) transmission microscopy; current-voltage measurements (Highlight: Improvement of resistivity of un-doped crystals after annealing); low-temperature photoluminescence (PL) spectrum of as-grown and annealed samples.

  18. Two types of photoluminescence blinking revealed by single quantum dot spectroelectrochemistry

    PubMed Central

    Galland, Christophe; Ghosh, Yagnaseni; Steinbrück, Andrea; Sykora, Milan; Hollingsworth, Jennifer A.; Klimov, Victor I.; Htoon, Han

    2012-01-01

    Photoluminescence (PL) intermittency (blinking), or random switching between states of high- (ON) and low (OFF) emissivities, is a universal property of molecular emitters exhibited by dyes1, polymers2, biological molecules3 and artificial nanostructures such as nanocrystal quantum dots, carbon nanotubes, and nanowires4,5,6. For the past fifteen years, colloidal nanocrystals have been used as a model system for studies of this phenomenon.5,6 The occurrence of OFF periods in nanocrystal emission has been commonly attributed to the presence of an additional charge7, which leads to PL quenching by nonradiative Auger recombination.8 However, the “charging” model was recently challenged in several reports.9,10 Here, to clarify the role of charging in PL intermittency, we perform time-resolved PL studies of individual nanocrystals while controlling electrochemically the degree of their charging. We find that two distinct mechanisms can lead to PL intermittency. We identify conventional blinking (A-type) due to charging/discharging of the nanocrystal core when lower PL intensities correlate with shorter PL lifetimes. Importantly, we observe a different blinking (B-type), when large changes in the PL intensity are not accompanied by significant changes in PL dynamics. We attribute this blinking behavior to charge fluctuations in the electron-accepting surface sites. When unoccupied, these sites intercept hot electrons before they relax into emitting core states. Both blinking mechanisms can be controlled electrochemically and under appropriate potential blinking can be completely suppressed. PMID:22071764

  19. Photoluminescence study of ZnS and ZnS:Pb nanoparticles

    SciTech Connect

    Virpal, Hastir, Anita; Kaur, Jasmeet; Singh, Gurpreet; Singh, Ravi Chand

    2015-05-15

    Photoluminescence (PL) study of pure and 5wt. % lead doped ZnS prepared by co-precipitation method was conducted at room temperature. The prepared nanoparticles were characterized by X-ray Diffraction (XRD), UV-Visible (UV-Vis) spectrophotometer, Photoluminescence (PL) and Raman spectroscopy. XRD patterns confirm cubic structure of ZnS and PbS in doped sample. The band gap energy value increased in case of Pb doped ZnS nanoparticles. The PL spectrum of pure ZnS was de-convoluted into two peaks centered at 399nm and 441nm which were attributed to defect states of ZnS. In doped sample, a shoulder peak at 389nm and a broad peak centered at 505nm were observed. This broad green emission peak originated due to Pb activated ZnS states.

  20. Effects of indium and tin overlayers on the photoluminescence spectrum of mercuric iodide

    NASA Astrophysics Data System (ADS)

    James, R. B.; Bao, X. J.; Schlesinger, T. E.; Ortale, C.; Cheng, A. Y.

    1990-03-01

    Mercuric iodide (HgI2 ) crystals with semitransparent metal overlayers of indium and tin were characterized using low-temperature photoluminescence (PL) spectroscopy. The PL spectra were found to differ for points beneath the thin metal overlayers and points that were masked off during each deposition. The photoluminescence data were compared with PL measurements taken on HgI2 photodetectors with indium-tin-oxide (ITO) entrance electrodes. The similarities of the spectra for the HgI2 samples with In, Sn, and ITO conducting overlayers indicate that the regions in the ITO-contacted photodetectors with relatively poor photoresponses are associated with the interaction of indium or tin with the mercuric iodide substrate.

  1. Blue photoluminescence enhancement in laser-irradiated 6H-SiC at room temperature

    SciTech Connect

    Wu, Yan; Ji, Lingfei Lin, Zhenyuan; Jiang, Yijian; Zhai, Tianrui

    2014-01-27

    Blue photoluminescence (PL) of 6H-SiC irradiated by an ultraviolet laser can be observed at room temperature in dark condition. PL spectra with Gaussian fitting curve of the irradiated SiC show that blue luminescence band (∼440 nm) is more pronounced than other bands. The blue PL enhancement is the combined result of the improved shallow N-donor energy level and the unique surface state with Si nanocrystals and graphene/Si composite due to the effect of photon energy input by the short-wavelength laser irradiation. The study can provide a promising route towards the preparation of well-controlled blue photoluminescence material for light-emitting devices.

  2. Blue photoluminescence enhancement in laser-irradiated 6H-SiC at room temperature

    NASA Astrophysics Data System (ADS)

    Wu, Yan; Ji, Lingfei; Lin, Zhenyuan; Jiang, Yijian; Zhai, Tianrui

    2014-01-01

    Blue photoluminescence (PL) of 6H-SiC irradiated by an ultraviolet laser can be observed at room temperature in dark condition. PL spectra with Gaussian fitting curve of the irradiated SiC show that blue luminescence band (˜440 nm) is more pronounced than other bands. The blue PL enhancement is the combined result of the improved shallow N-donor energy level and the unique surface state with Si nanocrystals and graphene/Si composite due to the effect of photon energy input by the short-wavelength laser irradiation. The study can provide a promising route towards the preparation of well-controlled blue photoluminescence material for light-emitting devices.

  3. Photoluminescence study of ZnS and ZnS:Pb nanoparticles

    NASA Astrophysics Data System (ADS)

    Virpal, Hastir, Anita; Kaur, Jasmeet; Singh, Gurpreet; Singh, Ravi Chand

    2015-05-01

    Photoluminescence (PL) study of pure and 5wt. % lead doped ZnS prepared by co-precipitation method was conducted at room temperature. The prepared nanoparticles were characterized by X-ray Diffraction (XRD), UV-Visible (UV-Vis) spectrophotometer, Photoluminescence (PL) and Raman spectroscopy. XRD patterns confirm cubic structure of ZnS and PbS in doped sample. The band gap energy value increased in case of Pb doped ZnS nanoparticles. The PL spectrum of pure ZnS was de-convoluted into two peaks centered at 399nm and 441nm which were attributed to defect states of ZnS. In doped sample, a shoulder peak at 389nm and a broad peak centered at 505nm were observed. This broad green emission peak originated due to Pb activated ZnS states.

  4. Preparation and photoluminescence properties of europium ions doped TiO2 nanocrystals.

    PubMed

    Liu, Hai; Yu, Lixin

    2013-07-01

    In this paper, pure and Eu3+ doped TiO2 nanocrystals (NCs) have been fabricated successfully by a two steps of sol-gel and hydrothermal methods. The microstructures, morphologies and photoluminescent properties of Eu(3+)-TiO2 were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and photoluminescence spectroscopy (PL). XRD and PL results show that the existent of rare earth can inhibit the transformation of TiO2 NCs from anatase to rutile phase and can improve the luminescence intensity of the prepared samples. The room-temperature PL emission of the as-grown samples is dominated by the 5D(0)-7F(j) transitions of Eu3+ ions. But the luminescence intensity drops dramatically when the annealing temperature reaches a relatively high degree because of the formation of the rutile phase of TiO2 NCs hosts. PMID:23901539

  5. Tailoring room temperature photoluminescence of antireflective silicon nanofacets

    SciTech Connect

    Basu, Tanmoy; Kumar, M.; Ghatak, J.; Som, T.; Kanjilal, A.; Sahoo, P. K.

    2014-09-21

    In this paper, a fluence-dependent antireflection performance is presented from ion-beam fabricated nanofaceted-Si surfaces. It is also demonstrated that these nanofacets are capable of producing room temperature ultra-violet and blue photoluminescence which can be attributed to inter-band transitions of the localized excitonic states of different Si-O bonds at the Si/SiO{sub x} interface. Time-resolved photoluminescence measurements further confirm defect-induced radiative emission from the surface of silicon nanofacets. It is observed that the spectral characteristics remain unchanged, except an enhancement in the photoluminescence intensity with increasing ion-fluence. The increase in photoluminescence intensity by orders of magnitude stronger than that of a planar Si substrate is due to higher absorption of incident photons by nanofaceted structures.

  6. Quasi-continuum photoluminescence: Unusual broad spectral and temporal characteristics found in defective surfaces of silica and other materials

    SciTech Connect

    Laurence, Ted A. Bude, Jeff D.; Shen, Nan; Steele, William A.; Ly, Sonny

    2014-02-28

    We previously reported a novel photoluminescence (PL) with a distribution of fast decay times in fused silica surface flaws that is correlated with damage propensity by high fluence lasers. The source of the PL was not attributable to any known silica point defect. Due to its broad spectral and temporal features, we here give this PL the name quasi-continuum PL (QC-PL) and describe the features of QC-PL in more detail. The primary features of QC-PL include broad excitation and emission spectra, a broad distribution of PL lifetimes from 20 ps to 5 ns, continuous shifts in PL lifetime distributions with respect to emission wavelength, and a propensity to photo-bleach and photo-brighten. We found similar PL characteristics in surface flaws of other optical materials, including CaF{sub 2}, DKDP, and quartz. Based on the commonality of the features in different optical materials and the proximity of QC-PL to surfaces, we suggest that these properties arise from interactions associated with high densities of defects, rather than a distribution over a large number of types of defects and is likely found in a wide variety of structures from nano-scale composites to bulk structures as well as in both broad and narrow band materials from dielectrics to semiconductors.

  7. Composition and Permeability of Oleate Adlayers of CdS Quantum Dots upon Dilution to Photoluminescence-Relevant Concentrations.

    PubMed

    Nepomnyashchii, Alexander B; Harris, Rachel D; Weiss, Emily A

    2016-03-15

    This paper describes the changes in surface chemistry that occur in oleate-capped CdS quantum dots (QDs) upon dilution from NMR-relevant concentrations (10 μM) to photoluminescence (PL)-relevant concentrations (0.1 μM) and the consequences these changes have on the relative probabilities of radiative and nonradiative decay of the QD exciton. Characterization of the QD surface by nuclear magnetic resonance (NMR) spectroscopy reveals that upon dilution in three solvents, C6D6, C6D12, and CDCl3, oleate ligands, in the form of cadmium oleate and Cd(x)OA(y) clusters, desorb. Changes in the ligand coverage by 30-40% do not impact the solubility of the QDs, do not have measurable influence on the absorption or PL line widths, produce small (±0.05), nonmonotonic changes in the relative PL quantum yield, and produce small, nonmonotonic changes the relative partitioning between band-edge and "trapped" exciton emission. Desorption of surface ligands as a result of dilution of the QDs does, however, make the QDs more redox-active with respect to a small-molecule photooxidant, benzoquinone (BQ), because less dense organic adlayers allow a greater number of BQs to permeate the ligand shell and adsorb to the QD surface. Unlike previous studies, in which the QD concentrations used for NMR characterization were more than a factor of 10 higher than those used for optical measurements, this study directly correlates the surface composition of the QDs to their photophysical properties. PMID:26901485

  8. Tailoring the photoluminescence characteristics of p-type GaSb: The role of surface chemical passivation

    NASA Astrophysics Data System (ADS)

    Wang, Bo; Wei, Zhipeng; Li, Mei; Liu, Guojun; Zou, Yonggang; Xing, Guozhong; Tan, Thiam Teck; Li, Sean; Chu, Xueying; Fang, Fang; Fang, Xuan; Li, Jinhua; Wang, Xiaohua; Ma, Xiaohui

    2013-01-01

    We report a systematic study on modulating optical properties in gallium antimonide (GaSb) with the sulfur surface passivation. Compared with the pristine sample, the intensity of the photoluminescence (PL) emission from the passivated GaSb was dramatically enhanced about 15 times at room temperature. The temperature-dependent surface states were further investigated via the low temperature PL spectroscopy. The bound-edge-related transition emission (BE4) at 795 meV and the residual acceptor associated emission located at 777 meV were identified clearly at 10 K. The observed passivation effects on the photoluminescence characteristics evolution of GaSb are discussed in detail.

  9. Highly Luminescent Hybrid SiO2-Coated CdTe Quantum Dots Retained Initial Photoluminescence Efficiency in Sol-Gel SiO2 Film.

    PubMed

    Sun, Hongsheng; Xing, Yugui; Wu, Qinan; Yang, Ping

    2015-02-01

    A highly luminescent silica film was fabricated using tetraethyl orthosilicate (TEOS) and 3-aminopropyltrimethoxysilane (APS) through a controlled sol-gel reaction. The pre-hydrolysis of TEOS and APS which resulted in the mixture of TEOS and APS in a molecular level is a key for the formation of homogenous films. The aminopropyl groups in APS play an important role for obtaining homogeneous film with high photoluminescence (PL). Red-emitting hybrid SiO2-coated CdTe nano-crystals (NCs) were fabricated by a two-step synthesis including a thin SiO2 coating via a sol-gel process and a subsequent refluxing using green-emitting CdTe NCs. The hybrid SiO2-coated CdTe NCs were embedded in a functional SiO2 film via a two-step process including adding the NCs in SiO2 sol with a high viscosity and almost without ethanol and a subsequent spinning coating. The hybrid SiO2-coated CdTe NCs retained their initial PL efficiency (54%) in the film. Being encapsulated with the hybrid NCs in the film, no change on the absorption and PL spectra of red-emitting CdTe NCs (632 nm) was observed. This indicates the hybrid NCs is stable enough during preparation. This phenomenon is ascribed to the controlled sol-gel process and a hybrid SiO2 shell on CdTe NCs. Because these films exhibited high PL efficiency and stability, they will be utilizable for potential applications in many fields. PMID:26353691

  10. The dual roles of functional groups in the photoluminescence of graphene quantum dots

    NASA Astrophysics Data System (ADS)

    Wang, Shujun; Cole, Ivan S.; Zhao, Dongyuan; Li, Qin

    2016-03-01

    The photoluminescent properties of graphene nanoparticle (named graphene quantum dots) have attracted significant research attention in recent years owing to their profound application potential. However, the photoluminescence (PL) origin of this class of nanocarbons is still unclear. In this paper, combining direct experimental evidence enabled by a facile size-tunable oxygenated graphene quantum dots (GQDs) synthesis method and theoretical calculations, the roles of the aromatic core, functional groups and disordered structures (i.e. defects and sp3 carbon) in the PL of oxygenated GQDs are elucidated in detail. In particular, we found that the functional groups on GQDs play dual roles in the overall emission: (1) they enable π* --> n and σ* --> n transitions, resulting in a molecular type of PL, spectrally invariable with change of particle size or excitation energy; (2) similar to defects and sp3 carbon, functional groups also induce structural deformation to the aromatic core, leading to mid-gap states or, in other words, energy traps, causing π* --> mid-gap states --> π transitions. Therefore, functional groups contribute to both the blue edge and the red shoulder of GQDs' PL spectra. The new insights on the role of functional groups in PL of fluorescent nanocarbons will enable better designs of this new class of materials.The photoluminescent properties of graphene nanoparticle (named graphene quantum dots) have attracted significant research attention in recent years owing to their profound application potential. However, the photoluminescence (PL) origin of this class of nanocarbons is still unclear. In this paper, combining direct experimental evidence enabled by a facile size-tunable oxygenated graphene quantum dots (GQDs) synthesis method and theoretical calculations, the roles of the aromatic core, functional groups and disordered structures (i.e. defects and sp3 carbon) in the PL of oxygenated GQDs are elucidated in detail. In particular, we found

  11. Investigation of Photoluminescence and Photocurrent in InGaAsP/InP Strained Multiple Quantum Well Heterostructures

    NASA Technical Reports Server (NTRS)

    Raisky, O. Y.; Wang, W. B.; Alfano, R. R.; Reynolds, C. L., Jr.; Swaminathan, V.

    1997-01-01

    Multiple quantum well InGaAsP/InP p-i-n laser heterostructures with different barrier thicknesses have been investigated using photoluminescence (PL) and photocurrent (PC) measurements. The observed PL spectrum and peak positions are in good agreement with those obtained from transfer matrix calculations. Comparing the measured quantum well PC with calculated carrier escape rates, the photocurrent changes are found to be governed by the temperature dependence of the electron escape time.

  12. Effects of Additives, Photodegradation, and Water-tree Degradation on the Photoluminescence in Polyethylene and Polypropylene

    NASA Astrophysics Data System (ADS)

    Ito, Toshihide; Fuse, Norikazu; Ohki, Yoshimichi

    Photoluminescence (PL) spectra induced by irradiation of ultraviolet photons are compared among low-density polyethylene (LDPE), crosslinked polyethylene (XLPE), and polypropylene (PP). Three PL bands appear around 4.2, 3.6, and 3.1 eV in LDPE and XLPE, while similar three PL bands are observed at similar energies in PP. The PL spectra and their decay profiles are independent of the presence of additives and are also independent of whether the samples were crosslinked or not. These results indicate that neither the additives nor the crosslinking has any significant effects on the respective three PLs in PE and PP. When the sample was pre-irradiated by the ultraviolet photons under different atmospheres (air, O2, and vacuum), all the PL intensities decrease with the progress of the pre-irradiation regardless of whether the sample is PE or PP. Therefore, all the PLs are considered to result from impurities. In all the pre-irradiated samples, a new PL band appears at 2.9 eV, of which intensity is stronger when the oxygen partial pressure during the pre-irradiation was lower. This PL is considered to be due to photo-induced conjugated double bonds. It has also been confirmed that water-tree degradation in LDPE or in XLPE does not contribute to PL.

  13. Electron transition pathways of photoluminescence from 3C-SiC nanocrystals unraveled by steady-state, blinking and time-resolved photoluminescence measurements

    NASA Astrophysics Data System (ADS)

    Gan, Zhixing; Wu, Xinglong; Xu, Hao; Zhang, Ning; Nie, Shouping; Fu, Ying

    2016-07-01

    The cubic phase SiC nanocrystals (3C-SiC NCs) have been extensively studied for electronics and photonics applications. In this work we study the electron transition pathways of photoluminescence (PL) from 3C-SiC NCs. It is found through measuring the steady-state, blinking and time-resolved PL spectra that surface passivation by glycerol improved the steady-state PL intensity (it does not modify the emission wavelength) and the NCs fluoresced more steadily. The PL decay lifetimes are shown to be the same when the detection wavelength is modified to scan the broad PL peak, implying that the broad PL peak is originated from the distribution of NCs’ sizes. Furthermore, the PL decay lifetimes are not modified by the surface passivation. It is concluded that for PL, the electron is photoexcited from the ground state in the NC to a high-energy excited state, relaxes to the first excited state then radiatively recombines to the ground state to emit a photon. The photoexcited electron at the high-energy excited state could transit to the surface state, resulting in a reduced PL intensity and a decreased on-state dwell time in the blinking trajectory. The PL decay lifetime data implies that the two principal electron transition pathways of (a) high-energy excited state \\Rightarrow the first excited state \\Rightarrow the ground state, and (b) high-energy excited state \\Rightarrow surface state \\Rightarrow the ground state are independent from each other. We strongly believe that such a deep knowledge about 3C-SiC NCs will open new doors to harness them for novel applications.

  14. Photoluminescence fatigue and inhomogeneous line broadening in semi-insulating Tl6SeI4 single crystals

    NASA Astrophysics Data System (ADS)

    Kostina, S. S.; Peters, J. A.; Lin, W.; Chen, P.; Liu, Z.; Wang, P. L.; Kanatzidis, M. G.; Wessels, B. W.

    2016-06-01

    Photoluminescence (PL) properties of semi-insulating Tl6SeI4 have been investigated. A broad emission band centered at 1.63 ± 0.02 eV was observed in all samples. The PL emission band is excitonic in nature and is tentatively attributed to a bound exciton emission. PL fatigue (a reduction in PL intensity under prolonged laser excitation) was always observed. The amount of PL fatigue depended on excitation power and temperature. PL fatigue kinetics are described by a stretched exponential with nominal lifetimes in the 10–265 s range. The recovery of the PL occurred within a few seconds of light cessation. The magnitude of PL fatigue in different samples correlated with inhomogeneous line broadening of the 1.63 eV emission band, such that broader bands exhibited more fatigue. An additional luminescence band centered at 1.78 eV was observed which increased in intensity under prolonged laser irradiation. The fatigue phenomenon is tentatively attributed to two mechanisms—the formation of photo-induced defects and the formation of quasi-stable particles. Both of these mechanisms introduce additional radiative and non-radiative recombination channels that lead to a decrease in the PL intensity under prolonged laser irradiation. Since inhomogeneous line broadening and PL fatigue are related to the concentration of defects or impurities, the measurement of these two parameters is an effective method to screen sample quality.

  15. Paramutation alters regulatory control of the maize pl locus.

    PubMed Central

    Hollick, J B; Patterson, G I; Asmundsson, I M; Chandler, V L

    2000-01-01

    The maize purple plant (pl) locus encodes a transcription factor required for anthocyanin pigment synthesis in vegetative and floral tissues. The strongly expressed Pl-Rhoades (Pl-Rh) allele is unstable, spontaneously changing to weaker expression states (Pl') at low frequencies and exclusively changing to Pl' in Pl'/Pl-Rh heterozygotes. The weakly expressed Pl' state is mitotically and meiotically stable, yet reversible. This type of allele-dependent, heritable alteration of gene control is called paramutation. Expression studies herein demonstrate that visible differences in anthocyanin pigment levels mirror pl RNA abundance and that pl paramutation is associated with reduced transcription of the pl gene. This transcriptional alteration is accompanied by acquisition of light-dependent regulation. Restriction endonuclease mapping indicates that these changes in pl gene regulation are not associated with detectable DNA alterations or with extensive changes in cytosine methylation patterns. Genetic tests show that Pl-Blotched (Pl-Bh), a structurally similar pl allele encoding an identical pl RNA and PL protein, does not participate in pl paramutation. This result suggests that if cis-acting sequences are required for pl paramutation they are distinct from the protein coding and immediately adjacent regions. A model is discussed in which pl paramutation results in heritable changes of chromatin structure that fundamentally alter regulatory interactions occurring during plant development. PMID:10747073

  16. Giant photoluminescence emission in crystalline faceted Si grains

    PubMed Central

    Faraci, Giuseppe; Pennisi, Agata R.; Alberti, Alessandra; Ruggeri, Rosa; Mannino, Giovanni

    2013-01-01

    Empowering an indirect band-gap material like Si with optical functionalities, firstly light emission, represents a huge advancement constantly pursued in the realization of any integrated photonic device. We report the demonstration of giant photoluminescence (PL) emission by a newly synthesized material consisting of crystalline faceted Si grains (fg-Si), a hundred nanometer in size, assembled in a porous and columnar configuration, without any post processing. A laser beam with wavelength 632.8 nm locally produce such a high temperature, determined on layers of a given thickness by Raman spectra, to induce giant PL radiation emission. The optical gain reaches the highest value ever, 0.14 cm/W, representing an increase of 3 orders of magnitude with respect to comparable data recently obtained in nanocrystals. Giant emission has been obtained from fg-Si deposited either on glass or on flexible, low cost, polymeric substrate opening the possibility to fabricate new devices. PMID:24056300

  17. Catalytic role of adsorbates in the photoluminescence emission of Si nanocrystals

    NASA Astrophysics Data System (ADS)

    Faraci, Giuseppe; Gibilisco, Santo; Pennisi, Agata R.; Franzó, Giorgia; La Rosa, Salvatore; Lozzi, Luca

    2008-12-01

    Silicon nanocrystals were synthesized and deposited on different substrates. In order to clarify the photoluminescence (PL) emission of these agglomerates, we studied the luminescence spectra of several samples as a function of the exposure to air, oxygen, nitrogen, and rare gases. Measurements at different pressures reveal a strong enhancement of the PL at atmospheric pressure, when the sample is in air. In contrast no significant PL is observed for clean Si quantum dot in rare-gas atmosphere and in air at low pressure. Different behavior is detected in oxygen and in nitrogen as a function of the pressure. These data point out a catalytic role of the surface adsorption adding significant information for clarifying the PL mechanism. A comparison of our results, including the decay-time spectra with data and models of literature, demonstrates the important role of the phonon interaction in the relaxation and decay processes.

  18. Photoluminescence studies of polycrystalline Cu(In,Ga)Se2: Lateral inhomogeneities beyond Abbe's diffraction limit

    NASA Astrophysics Data System (ADS)

    Neumann, Oliver; Brüggemann, Rudolf; Hariskos, Dimitrios; Witte, Wolfram; Bauer, Gottfried H.

    2015-11-01

    We analyze Cu(In,Ga)Se2 absorbers with a scanning near-field optical microscope (SNOM) by photoluminescence (PL). Such measurements allow one to extract local fluctuations of the integral PL yield, the quasi-Fermi level splitting, and the material composition in the submicron range. However, the experimental findings depend strongly on the surface roughness of the absorber: If the surface is rough, artifact-prone correlations between surface contour and PL features measured by SNOM can be found that complicate the study of recombination effects. For smooth surfaces, such correlations no longer exist and the influence of grain boundaries on the integral PL yield and the quasi-Fermi level splitting is revealed. The method also allows a detailed determination of the local band gaps in neighboring grains and their spatial variation inside, and thus of possibly local changes in chemical composition of different grains.

  19. Photoluminescence intensity enhancement in SWNT aqueous suspensions due to reducing agent doping: Influence of adsorbed biopolymer

    NASA Astrophysics Data System (ADS)

    Kurnosov, N. V.; Leontiev, V. S.; Linnik, A. S.; Lytvyn, O. S.; Karachevtsev, V. A.

    2014-06-01

    The influence of biopolymer wrapped around nanotube on the enhancement of the semiconducting single-walled carbon nanotube (SWNT) photoluminescence (PL) in aqueous suspension which increases due to the reducing agent dithiothreitol (DTT) doping effect was revealed. The greatest enhancement of PL was observed for SWNTs covered with double- or single stranded DNA (above 170%) and DTT weak influence was revealed for SWNTs:polyC suspension (∼45%). The magnitude of the PL enhancement depends also on nanotube chirality and sample aging. The behavior of PL from SWNTs covered with various polymers is explained by the different biopolymers ordering on the nanotube surface. The ordered polymer conformation on the nanotube weakens the reducing agent doping effect. The method of reducing agent doping of nanotube:biopolymer aqueous suspension can serve as a sensitive luminescent probe of the biopolymer ordering on the carbon nanotube and can be used to increase the sensitivity of luminescent biosensors.

  20. Excitation Power Dependence Of Photoluminescence From GaAs Quantum Dot Prepared By Droplet Epitaxy Method

    NASA Astrophysics Data System (ADS)

    Choi, H. Y.; Kim, D. Y.; Cho, M. Y.; Kim, G. S.; Jeon, S. M.; Yim, K. G.; Kim, M. S.; Lee, D. Y.; Kim, J. S.; Kim, J. S.; Son, J. S.; Lee, J. I.; Leem, J. Y.

    2011-12-01

    GaAs quantum dot (QD) was grown by droplet epitaxy (DE) method and the excitation power dependence of photoluminescence (PL) were carried out. To investigate the effect of annealing temperature on QDs optical properties, the two step RTA process was carried out in a various temperature range from 800 to 1000 °C. As the thermal annealing temperature increases, the PL peak position is blue-shifted due to the change of the composition and size distribution of QDs, and the highest PL intensity is observed at the sample annealed at 900 °C. The integrated PL intensity (IPL) is plotted against the excitation density in a log-log scale and the slope was calculated.

  1. An analysis of temperature dependent photoluminescence line shapes in InGaN

    NASA Astrophysics Data System (ADS)

    Teo, K. L.; Colton, J. S.; Yu, P. Y.; Weber, E. R.; Li, M. F.; Liu, W.; Uchida, K.; Tokunaga, H.; Akutsu, N.; Matsumoto, K.

    1998-09-01

    Photoluminescence (PL) line shapes in InGaN multiple quantum well structures have been studied experimentally and theoretically between 10 and 300 K. The higher temperature PL spectra can be fitted quantitatively with a thermalized carrier distribution and a broadened joint-density-of-states. The low temperature PL line shapes suggest that carriers are not thermalized, as a result of localization by band-gap fluctuations. We deduce a localization energy of ˜7 meV as compared with an activation energy of ˜63 meV from thermal quenching of the PL intensity. We thus conclude that this activation energy and the band-gap fluctuation most likely have different origins.

  2. Color-Tunable Resonant Photoluminescence and Cavity-Mediated Multistep Energy Transfer Cascade.

    PubMed

    Okada, Daichi; Nakamura, Takashi; Braam, Daniel; Dao, Thang Duy; Ishii, Satoshi; Nagao, Tadaaki; Lorke, Axel; Nabeshima, Tatsuya; Yamamoto, Yohei

    2016-07-26

    Color-tunable resonant photoluminescence (PL) was attained from polystyrene microspheres doped with a single polymorphic fluorescent dye, boron-dipyrrin (BODIPY) 1. The color of the resonant PL depends on the assembling morphology of 1 in the microspheres, which can be selectively controlled from green to red by the initial concentration of 1 in the preparation process of the microspheres. Studies on intersphere PL propagation with multicoupled microspheres, prepared by micromanipulation technique, revealed that multistep photon transfer takes place through the microspheres, accompanying energy transfer cascade with stepwise PL color change. The intersphere energy transfer cascade is direction selective, where energy donor-to-acceptor down conversion direction is only allowed. Such cavity-mediated long-distance and multistep energy transfer will be advantageous for polymer photonics device application. PMID:27348045

  3. Photoluminescence from quasi-dendritic ZnO nanostructures grown in anodic alumina nanochannels

    NASA Astrophysics Data System (ADS)

    Chen, Shih-Yung; Chen, Wei-Liang; Ko, Chung-Ting; Lai, Ming-Yu; Li, Feng-Chieh; Lee, Yu-Yang; Tsai, Kun-Tong; Chen, Miin-Jang; Chang, Yu-Ming; Wang, Yuh-Lin

    2015-11-01

    Atomic layer deposition (ALD) has been used to grow zinc oxide (ZnO) into a template of anodic aluminum oxide with quasi-dendritic nanochannels to form quasi-dendritic nanostructures. The characteristic photoluminescence (PL) emission from the inner region of the quasi-dendritic ZnO nanostructure peaks at 397 nm while that from its outer region at 424 nm. In between the two regions, the PL peak shows monotonic shift. In other words, the different layers of the single quasi-dendritic ZnO nanostructure emit PL with graded wavelengths spontaneously. The red shift in the PL peak positions is likely to be caused by the change in local stoichiometry between Zn and O, which are resulted from the limited supply of materials through the quasi-dendritic nanochannels during the ALD. The process to fabricate such quasi-dendritic ZnO nanostructures with spontaneously graded emission could help expand applications of ZnO-based devices.

  4. Contribution of Increased Extraction Efficiency to Increased Photo-Luminescence in Strained Polymer Films

    NASA Astrophysics Data System (ADS)

    Chen, Po-Jui; Yang, Arnold Chang-Mou; Hsu, Jui-Hung; White, Jonathon D.

    2011-03-01

    Potential applications of Luminescent Conjugated Polymers in thin film diodes, solar cells and flat panel displays have been limited by low efficiency. Craze formation in MEH-PPV/polystyrene thin films leads to a factor of 2 or 3 increase in collected photo-luminescence (PL) due to a combination of factors such as MEH-PPV chain conformation and increased extraction efficiency of PL. In order to determine the contribution of the latter effect, we used Monte Carlo based Ray Tracing to analyze the trajectory of photons generated in the thin film under different strain conditions. Our results indicate that increased PL extraction due to the existence of crazes contributes ~ 50 % of the observed increase in PL, the majority of this being due to light emitted near the craze edges.

  5. Contribution of Increased Extraction Efficiency to Increased Photo-Luminescence in Strained Polymer Films

    NASA Astrophysics Data System (ADS)

    Chen, Po-Jui; Chang-Mou Yang, Arnold; Hsu, Jui-Hung; White, Jonathon D.

    2012-02-01

    Potential applications of Luminescent Conjugated Polymers in thin film diodes, solar cells and flat panel displays have been limited by low efficiency. Craze formation in MEH-PPV/polystyrene thin film leads to a factor of 2 or 3 increase in collected photo-luminescence (PL) due to a combination of factors such as MEH-PPV chain conformation and increased extraction efficiency of PL. In order to determine the contribution of the latter effect, we used Monte Carlo based Ray Tracing to analyze the trajectory of photons generated in the thin film under different strain conditions. Our results indicate that increased PL extraction due to the existence of crazes contributes ˜15% of the observed increase in PL, the majority of this being due to light emitted near the craze edges.

  6. Defect-induced photoluminescence of strontium titanate and its modulation by electrostatic gating

    NASA Astrophysics Data System (ADS)

    Kumar, Dushyant; Budhani, R. C.

    2015-12-01

    The photoluminescence (PL) spectra of Ar+-ion irradiated single crystals of SrTiO3 (STO) excited by the 325 nm line of a He-Cd laser are compared with those of pristine crystals, epitaxial films, and amorphous layers of STO at several temperatures down to 20 K. The 550 eV Ar+-beam irradiation activates three distinctly visible PL peaks: blue (˜430 nm), green (˜550 nm), and infrared (˜820 nm) at room temperature, making the photoluminescence multicolored. The abrupt changes in PL properties below ≈100 K are discussed in relation with the antiferrodistortive structural phase transition in SrTiO3 from cubic to tetragonal symmetry, which makes it a direct bandgap semiconductor. The photoluminescence spectra are also tuned by an electrostatic gate field in a field-effect transistor geometry. At 20 K, we observed a maximum increase of ˜20 % in PL intensity under back gating of SrTiO3.

  7. Synthesis and Photoluminescence Properties of SnO2 Nanopowder

    NASA Astrophysics Data System (ADS)

    Arai, Takahiro; Adachi, Sadao

    2012-10-01

    SnO2 nanopowder was synthesized by calcining metastannic salt (SnO2·H2O) prepared by chemically etching metallic Sn in aqueous HNO3 solution. The calcined SnO2 nanopowder was investigated by X-ray diffraction (XRD) measurement and photoluminescence (PL) spectroscopy. The XRD and PL intensities increased with increasing calcining temperature, yielding an activation energy of ˜0.65 eV. The PL spectra of the calcined SnO2 nanopowder exhibited green (G) and red (R) emission bands with peaks at ˜2.5 and ˜2.0 eV, respectively, that were clearly dependent not only on the excitation light wavelength but also on the sample temperature. The temperature dependence of the PL intensity between 20 and 300 K was explained by the thermal quenching with activation energies of ˜15 meV (T=20-60 K) and ˜0.12-0.18 eV (T ≥100 K). The G and R emission states were found to originate from the Jahn-Teller effect of the 5s2 (Sn2+) ions in the SnO2 matrix and were similar to those generally observed in many ns2-doped alkali halides and SnCl2.

  8. Polarized Photoluminescence Study of CdGeAs_2.

    NASA Astrophysics Data System (ADS)

    McCrae, J. E.; Hengehold, R. L.; Yeo, Y. K.; Ohmer, M. C.; Schunemann, P. G.

    1996-03-01

    Cadmium Germanium Diarsenide (CdGeAs_2) is a chalcopyrite semiconductor with excellent nonlinear optical properties. It also has a very anisotropic thermal expansion coefficient which has made it almost impossible to obtain large crack-free oriented crystals of the material until the recent development of the seeded ultra-low gradient horizontal dynamic freeze technique. The low temperature photoluminescence (PL) spectrum contains two peaks; a broad, weak peak is found near 0.38 eV, and a somewhat narrower and often far brighter peak is found near 0.57 eV. The shift of the higher energy peak with excitation laser power indicates that it is due to donor-acceptor pair transitions. The variation of this peak with temperature suggests that band-to-band recombination also comes into play at higher temperatures. The PL signal persists up to at least room temperature. Additionally, the first polarization dependent PL study was made on oriented samples, and it has been found that the PL spectra are strongly polarized.

  9. The aggregation enhanced photoluminescence of gold nanorods in aqueous solutions.

    PubMed

    Cen, Yan; Huang, Xiao; Zhang, Ren; Chen, Ji-Yao

    2014-09-01

    The photoluminescence (PL) properties of single gold nanorod (AuNR) under one-photon excitation (OPE) have been reported recently. In this work, the PL of AuNRs in aqueous solutions were studied with OPE of 514 or 633 nm to characterize the emissions of transverse and longitudinal surface Plasmon resonance (TSPR and LSPR) bands, because the AuNRs aqueous solution was frequently used in bio-medical applications. We found that under 514 nm OPE the TSPR emissions of four groups of AuNRs with different aspect ratios in aqueous solutions were all strong dominating the PL emission with the quantum yield (QY) of 10(-4), which is at least three orders of magnitude higher than that of single AuNR. We further found that the aggregate was the basic form of AuNRs in aqueous solution and living cells, measured by the elastic light scattering and transmission electron microscopy measurements. The Plasmon coupling particularly the TSPR coupling between the neighbored AuNRs in aggregates enhanced the PL and increased the QY, because the conjugation of the rod side to side was a main aggregate mode. Under 633 nm OPE, only LSPR emissions of AuNRs aqueous solutions occurred with the QY level of 10(-5) which is very similar to that of singe AuNR, because of the negligible LSPR coupling. PMID:25096523

  10. Maximizing Photoluminescence Extraction in Silicon Photonic Crystal Slabs.

    PubMed

    Mahdavi, Ali; Sarau, George; Xavier, Jolly; Paraïso, Taofiq K; Christiansen, Silke; Vollmer, Frank

    2016-01-01

    Photonic crystal modes can be tailored for increasing light matter interactions and light extraction efficiencies. These PhC properties have been explored for improving the device performance of LEDs, solar cells and precision biosensors. Tuning the extended band structure of 2D PhC provides a means for increasing light extraction throughout a planar device. This requires careful design and fabrication of PhC with a desirable mode structure overlapping with the spectral region of emission. We show a method for predicting and maximizing light extraction from 2D photonic crystal slabs, exemplified by maximizing silicon photoluminescence (PL). Systematically varying the lattice constant and filling factor, we predict the increases in PL intensity from band structure calculations and confirm predictions in micro-PL experiments. With the near optimal design parameters of PhC, we demonstrate more than 500-fold increase in PL intensity, measured near band edge of silicon at room temperature, an enhancement by an order of magnitude more than what has been reported. PMID:27113674

  11. Maximizing Photoluminescence Extraction in Silicon Photonic Crystal Slabs

    PubMed Central

    Mahdavi, Ali; Sarau, George; Xavier, Jolly; Paraïso, Taofiq K.; Christiansen, Silke; Vollmer, Frank

    2016-01-01

    Photonic crystal modes can be tailored for increasing light matter interactions and light extraction efficiencies. These PhC properties have been explored for improving the device performance of LEDs, solar cells and precision biosensors. Tuning the extended band structure of 2D PhC provides a means for increasing light extraction throughout a planar device. This requires careful design and fabrication of PhC with a desirable mode structure overlapping with the spectral region of emission. We show a method for predicting and maximizing light extraction from 2D photonic crystal slabs, exemplified by maximizing silicon photoluminescence (PL). Systematically varying the lattice constant and filling factor, we predict the increases in PL intensity from band structure calculations and confirm predictions in micro-PL experiments. With the near optimal design parameters of PhC, we demonstrate more than 500-fold increase in PL intensity, measured near band edge of silicon at room temperature, an enhancement by an order of magnitude more than what has been reported. PMID:27113674

  12. Study of O2 sensitive photoluminescence of β-Ga2O3 nanostructures annealed in moist environments

    NASA Astrophysics Data System (ADS)

    Jangir, R.; Porwal, S.; Tiwari, Pragya; Rai, S. K.; Ganguli, Tapas

    2016-05-01

    In this study, effect of annealing in moist environment on the photoluminescence response to the oxygen (O2) is studied. β- Ga2O3 nanostructures were synthesized via vapor transport method on gold coated silicon substrate in N2 ambient. These β- Ga2O3 nanostructures were annealed in the different environment (water vapor and ammonia solution) and then room temperature PL measurements have been done at different oxygen partial pressures. PL results show that annealing modifies the surface of the nanostructures by creating permanent surface states which reduces the PL intensity response to the O2 because of competitive nonradiative paths. A possible mechanism for this behavior is also suggested.

  13. Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal

    NASA Astrophysics Data System (ADS)

    Huang, Jianliang; Ma, Wenquan; Zhang, Yanhua; Cao, Yulian; Liu, Ke; Huang, Wenjun; Luo, Shuai; Ji, Haiming; Yang, Tao

    2015-12-01

    We have determined the band overlap in type II InAs/GaSb superlattice (SL) structure based on the temperature dependent photoluminescence (PL) results of a short wavelength SL sample. The band overlap value is treated as a temperature variable and is simulated by fitting the PL peak position using the 8K·P method. It is found that the band overlap monotonically decreases from 0.325 to 0.225 eV when temperature is increased from 12 to 90 K. The calculated e1-hh1 transition using the obtained band overlap data shows an agreement with the PL results of another SL sample.

  14. Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Masui, Hisashi; Sonoda, Junichi; Pfaff, Nathan; Koslow, Ingrid; Nakamura, Shuji; Den Baars, Steven P.

    2008-08-01

    The quantum-confined Stark effect (QCSE) on InGaN-based light-emitting diodes (LEDs) was investigated as a part of the continuing study of exploring differences between photoluminescence (PL) and electroluminescence (EL) characteristics. The luminescence characteristics were related to electrical characteristics of green and amber LEDs by employing the electrical-bias-applied PL technique. By inspecting the band diagram, it has been found that the separation of quasi-Fermi levels, which strongly affects the QCSE, can be quantified and related to the luminescence. In order to compare PL and EL characteristics, attention was paid to the QCSE during the PL and EL measurements. Despite the control of the QCSE, differences were still confirmed between PL and EL characteristics, which have led us to the conclusion to that there are other unrevealed origins for the differences.

  15. Exciton Distribution between the Bright and Dark States in Single Carbon Nanotubes Studied by Magneto-Photoluminescence Spectroscopy

    NASA Astrophysics Data System (ADS)

    Matsunaga, Ryusuke; Matsuda, Kazunari; Kanemitsu, Yoshihiko

    2009-03-01

    We have performed micro-photoluminescence (PL) spectroscopy for single carbon nanotubes under magnetic fields at various temperatures. Sharp PL spectra of single carbon nanotubes allow us to directly observe the dark exciton PL peak a few meV below the bright exciton PL peak due to the Aharonov-Bohm effect [1]. From the PL intensity ratio of the dark to the bright excitons under magnetic fields, we found that the non-equilibrium (non-Boltzmann) distribution occurs between the bright and dark states, because phonons cannot scatter excitons between the two states with different parities [2]. Furthermore, we discuss the diameter dependence of the exciton population of the bright and dark states in single carbon nanotubes. [1] R. Matsunaga, K. Matsuda, and Y. Kanemitsu, Phys. Rev. Lett. 101, 147404 (2008). [2] V. Perebeinos, J. Tersoff, and Ph. Avouris, Nano Lett. 5, 2495 (2005).

  16. Photoluminescence polarization anisotropy for studying long-range structural ordering within semiconductor multi-atomic alloys and organic crystals

    SciTech Connect

    Prutskij, T.; Percino, J.; Orlova, T.; Vavilova, L.

    2013-12-04

    Long-range structural ordering within multi-component semiconductor alloys and organic crystals leads to significant optical anisotropy and, in particular, to anisotropy of the photoluminescence (PL) emission. The PL emission of ternary and quaternary semiconductor alloys is polarized if there is some amount of the atomic ordering within the crystal structure. We analyze the polarization of the PL emission from the quaternary GaInAsP semiconductor alloy grown by Liquid Phase Epitaxy (LPE) and conclude that it could be caused by low degree atomic ordering within the crystal structure together with the thermal biaxial strain due to difference between the thermal expansion coefficients of the layer and the substrate. We also study the state of polarization of the PL from organic crystals in order to identify different features of the crystal PL spectrum.

  17. Role of C–N Configurations in the Photoluminescence of Graphene Quantum Dots Synthesized by a Hydrothermal Route

    PubMed Central

    Permatasari, Fitri Aulia; Aimon, Akfiny Hasdi; Iskandar, Ferry; Ogi, Takashi; Okuyama, Kikuo

    2016-01-01

    Graphene quantum dots (GQDs) containing N atoms were successfully synthesized using a facile, inexpensive, and environmentally friendly hydrothermal reaction of urea and citric acid, and the effect of the GQDs’ C–N configurations on their photoluminescence (PL) properties were investigated. High-resolution transmission electron microscopy (HR-TEM) images confirmed that the dots were spherical, with an average diameter of 2.17 nm. X-ray photoelectron spectroscopy (XPS) analysis indicated that the C–N configurations of the GQDs substantially affected their PL intensity. Increased PL intensity was obtained in areas with greater percentages of pyridinic-N and lower percentages of pyrrolic-N. This enhanced PL was attributed to delocalized π electrons from pyridinic-N contributing to the C system of the GQDs. On the basis of energy electron loss spectroscopy (EELS) and UV-Vis spectroscopy analyses, we propose a PL mechanism for hydrothermally synthesized GQDs. PMID:26876153

  18. Role of C-N Configurations in the Photoluminescence of Graphene Quantum Dots Synthesized by a Hydrothermal Route

    NASA Astrophysics Data System (ADS)

    Permatasari, Fitri Aulia; Aimon, Akfiny Hasdi; Iskandar, Ferry; Ogi, Takashi; Okuyama, Kikuo

    2016-02-01

    Graphene quantum dots (GQDs) containing N atoms were successfully synthesized using a facile, inexpensive, and environmentally friendly hydrothermal reaction of urea and citric acid, and the effect of the GQDs’ C-N configurations on their photoluminescence (PL) properties were investigated. High-resolution transmission electron microscopy (HR-TEM) images confirmed that the dots were spherical, with an average diameter of 2.17 nm. X-ray photoelectron spectroscopy (XPS) analysis indicated that the C-N configurations of the GQDs substantially affected their PL intensity. Increased PL intensity was obtained in areas with greater percentages of pyridinic-N and lower percentages of pyrrolic-N. This enhanced PL was attributed to delocalized π electrons from pyridinic-N contributing to the C system of the GQDs. On the basis of energy electron loss spectroscopy (EELS) and UV-Vis spectroscopy analyses, we propose a PL mechanism for hydrothermally synthesized GQDs.

  19. Structure and infrared photoluminescence of GeSi nanocrystals formed by high temperature annealing of GeOx/SiO2 multilayers

    NASA Astrophysics Data System (ADS)

    Volodin, V. A.; Gambaryan, M. P.; Cherkov, A. G.; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2016-08-01

    Germanium and GeSi nanocrystals were synthesized in SiGeO2 glass by high temperature annealings of GeOx(5 nm)/SiO2(5 nm) multilayers. According to electron microscopy data, the size distribution and stoichiometry of the nanocrystals depend on the annealing temperature (700, 800, or 900 °C). Spatial redistribution of Ge with the formation of large faceted nanocrystals located near the Si substrate and GeSi intermixing at the substrate/film interface were observed. In the case of the 900 °C annealed sample, we note that some nanocrystals have a pyramid-like shape. Infrared absorption spectroscopy demonstrates that intermixing takes place between the GeOx and SiO2 layers leading to the formation of SiGeO2 glass. Raman spectroscopy confirms the formation of Ge nanocrystals after annealing at 700 °C and GeSi nanocrystals after annealing at 800 and 900 °C. For all annealed samples, we report the observation of infrared photoluminescence (PL) at low temperatures in the spectral range 1300–2100 nm. The observation of PL at wavelengths close to 2000 nm may be due to defect-induced radiative transitions in the nanocrystals.

  20. A co-precipitation preparation, crystal structure and photoluminescent properties of Er5%:Gd{sub 2}O{sub 3} nanorods

    SciTech Connect

    Boopathi, G. Mohan, R.; Raj, S. Gokul; Kumar, G. Ramesh

    2015-06-24

    An inexpensive preparation method is being reported for obtaining erbium doped gadolinium oxide (Er5%:Gd{sub 2}O{sub 3}) nanoscale rods. The elongated nanoscale systems, as-formed through a co-precipitation process, are characterized by using X-ray powder diffraction (XRD) patterns, scanning electron microscopy (SEM) with energy dispersive X-ray (EDX) mapping, Ultra Violet-visible (UV-vis.) absorption spectroscopy and photoluminescence (PL) spectroscopy. In addition, the Williamson–Hall (W–H) plot is also performed to distinguish the effect of crystalline size-induced broadening and strain-induced broadening at full-width at half-maximum (FWHM) of the XRD profile. The XRD patterns of as-formed and calcined products show that the phase confirmation. As revealed from the SEM micrographs, the morphology of the products show that the rod-like nanoparticles. The EDX micrographs show that the presence of elements in our samples. The band gap values in calcined samples are found to be in the range of 3.569 eV. Upon 230 nm excitation on calcined samples, three broad emission peaks are observed from PL studies. The possible mechanism for the formation of Er5%:Gd{sub 2}O{sub 3} nanorods is briefly discussed.

  1. Structural and photoluminescence properties of Eu(3+) doped α-Ag2WO4 synthesized by the green coprecipitation methodology.

    PubMed

    Pinatti, Ivo M; Nogueira, Içamira C; Pereira, Wyllamanney S; Pereira, Paula F S; Gonçalves, Rosana F; Varela, José A; Longo, Elson; Rosa, Ieda L V

    2015-10-28

    Europium doped silver tungstates α-Ag2-3xEuxWO4 (x = 0, 0.0025, 0.005, 0.0075 and 0.01 mol) were synthesized by the coprecipitation method at 90 °C for 30 minutes. These crystals were structurally characterized by means of X-ray diffraction (XRD), Rietveld refinement, and micro-Raman (MR) and Fourier transformed infrared (FT-IR) spectroscopies. Field emission scanning electron microscopy (FE-SEM) images were employed to observe the shape of the crystals. The optical properties were investigated by ultraviolet-visible (UV-vis) absorption and photoluminescence (PL) measurements. The XRD pattern indicated structural organization at a long range for all undoped and Eu-doped samples, while MR and FT-IR revealed that the presence of the Eu(3+) ions favors the structural organization at a short range. The Rietveld refinement showed that all the crystals are monophasic with an orthorhombic structure and the Pn2[combining macron]n space group. The refined lattice parameters and atomic positions were employed to model the WO6 and AgOn (n = 2, 4, 6 and 7) polyhedra in the unit cell. FE-SEM analysis revealed nanorod-like microcrystals with growth of metallic silver on the surface. Further, the UV-vis absorption spectra indicated the existence of intermediary energy levels within the band gap. PL spectra showed a broad band related to the [WO6] group and characteristic narrow peaks due to the f-f transitions of Eu(3+) as a result of efficient energy transfer from the matrix. Also, the emission line shape transitions from (5)D0 to (7)FJ (J = 0-4) levels of the Eu(3+) were noticed. Among the samples, the most intense photoluminescence results were observed for the α-Ag2-3xEuxWO4 (x = 0.0075) sample. Lifetime decays support that the Eu(3+) ions occupy at least two crystallographic sites. CIE coordinates confirmed the colors of the emission spectra which classify this material as a potential phosphor in the visible range. PMID:26394903

  2. The dual roles of functional groups in the photoluminescence of graphene quantum dots.

    PubMed

    Wang, Shujun; Cole, Ivan S; Zhao, Dongyuan; Li, Qin

    2016-04-14

    The photoluminescent properties of graphene nanoparticle (named graphene quantum dots) have attracted significant research attention in recent years owing to their profound application potential. However, the photoluminescence (PL) origin of this class of nanocarbons is still unclear. In this paper, combining direct experimental evidence enabled by a facile size-tunable oxygenated graphene quantum dots (GQDs) synthesis method and theoretical calculations, the roles of the aromatic core, functional groups and disordered structures (i.e. defects and sp(3) carbon) in the PL of oxygenated GQDs are elucidated in detail. In particular, we found that the functional groups on GQDs play dual roles in the overall emission: (1) they enable π* → n and σ* → n transitions, resulting in a molecular type of PL, spectrally invariable with change of particle size or excitation energy; (2) similar to defects and sp(3) carbon, functional groups also induce structural deformation to the aromatic core, leading to mid-gap states or, in other words, energy traps, causing π* → mid-gap states → π transitions. Therefore, functional groups contribute to both the blue edge and the red shoulder of GQDs' PL spectra. The new insights on the role of functional groups in PL of fluorescent nanocarbons will enable better designs of this new class of materials. PMID:26731007

  3. Facile synthesis of novel photoluminescent ZnO micro- and nanopencils.

    PubMed

    Pol, Vilas G; Calderon-Moreno, Jose M; Thiyagarajan, P

    2008-12-01

    A single-step solvent-, catalyst-, and template-free synthesis process to prepare photoluminescent pencils of ZnO either in micro- or in nanosize diameters from a single precursor is demonstrated. The thermolysis of Zn's acetate dihydrate (ZAD) precursor in a closed stainless steel reactor at 700 degrees C under autogenic pressure (6.5 MPa), yielded carbon sphere-decorated ZnO micropencils (ZnO-M's). The ZnO-M's have novel room-temperature photoluminescence (PL) with well-defined emission peaks at the green, yellow, orange, and red regions of the visible spectra while suppressing the blue region. On the contrary, the thermolysis of ZAD in a closed stainless steel reactor at 700 degrees C with released pressure yielded uniformly carbon-coated ZnO nanopencils (ZN's). The coated carbon in ZN's quenches the complete UV-vis PL; however, after annealing ZN's at 600 degrees C/2 h in air, the UV PL is dominant, and the visible PL is suppressed. The carbon coating (partly or completely) on the one-dimensional (1D) ZnO surfaces plays an important role to modify PL properties. The insight into the reaction mechanism was gained through in situ mass spectrometry measurements. The as-prepared ZnO-M's and ZN's have been systematically characterized to determine their morphology, structure, and composition. PMID:18986186

  4. The effect of hydrogen/deuterium introduction on photoluminescence of 3C-SiC crystals

    SciTech Connect

    Lee, B.K.; Steckl, A.J.; Zavada, J.M.; Wilson, R.G.

    1998-12-31

    The effect of the incorporation and annealing of deuterium in 3C-SiC on its photoluminescence is reported. A 3C-SiC crystal has been implanted with 100 kev deuterium and subsequently annealed at temperatures between 1015 C and 1220 C for 1 to 5 minutes. SIMS depth profiles indicate hydrogen is strongly trapped by defects generated through ion bombardment, but a gradual damage repairing occurs during annealing. Photoluminescence was measured with 488 nm Ar laser excitation for sample temperatures from 89 K to 400 K. The PL peak wavelength of 540 nm at room temperature has shifted to 538 nm at 89 K. The peak PL intensity decreases with measurement temperature while its full width at half maximum (FWHM) exhibits an increasing trend. PL data were taken at five annealing stages. The post-implantation peak PL intensity and its integrated area increase initially with annealing temperature and time. After the final annealing at 1218 C for 2 minute, PL intensity and its integrated area exhibit a decrease in level.

  5. Photoluminescence of Energetic Particle-Irradiated InxGa1-xNAlloys

    SciTech Connect

    Li, S.X.; Jones, R.E.; Haller, E.E.; Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Liliental-Weber, Z.; Lu, Hai; Schaff, William J.

    2005-12-14

    A study of the photoluminescence (PL) characteristics of In{sub x}Ga{sub 1-x}N alloys in which the Fermi level is controlled by energetic particle irradiation is reported. In In-rich In{sub x}Ga{sub 1-x}N the intensity of the PL emission initially increases with irradiation dose before falling rapidly at high doses. This unusual trend is attributed to the location of the average energy of the dangling-bond type native defects (the Fermi level stabilization energy, or E{sub FS}), which lies about 0.9 eV above the conduction band edge of InN. As a result of this atypically high position of E{sub FS}, irradiation-induced defects formed at low doses are donors, and do not act as efficient recombination centers. Thus, low dose irradiation increases the electron concentration and leads to an increase of the photoluminescence intensity. However, at higher irradiation doses, the Fermi level approaches E{sub FS}, and the defects formed become increasingly effective as a non-radiative recombination centers and the PL quenches quickly. Our calculations of the PL intensity based on the effect of the electron concentration and the minority carrier lifetime, show good agreement with the experimental data. Finally, the blue shift of PL signal with increasing electron concentration is explained by the breakdown of momentum conservation due to the irradiation damage.

  6. Effect of Silica Nanoparticles on the Photoluminescence Properties of BCNO Phosphor

    NASA Astrophysics Data System (ADS)

    Nuryadin, Bebeh W.; Faryuni, Irfana Diah; Iskandar, Ferry; Abdullah, Mikrajuddin; Khairurrijal, Khairurrijal

    2011-12-01

    Effect of additional silica nanoparticles on the photoluminescence (PL) performance of boron carbon oxy-nitride (BCNO) phosphor was investigated. As a precursor, boric acid and urea were used as boron and nitrogen sources, respectively. The carbon sources was polyethylene glycol (PEG) with average molecule weight 20000 g/mol.. Precursor solutions were prepared by mixing these raw materials in pure water, followed by stirring to achieve homogeneous solutions. In this precursor, silica nanoparticles were added at various mass ratio from 0 to 7 %wt in the solution. The precursors were then heated at 750 °C for 60 min in a ceramic crucible under atmospheric pressure. The photoluminescence (PL) spectrum that characterized by spectrophotometer showed a single, distinct, and broad emission band varied from blue to near red color, depend on the PEG, boric acid and urea ratio in the precursor. The addition of silica nanoparticles caused the increasing of PL intensity as well as the shifting of peak wavelength of PL spectrum. The peak shifting of PL was affected by the concentration of silica nanoparticles that added into the precursor. We believe that the BCNO-silica composite phosphor becomes a promising material for the phosphor conversion-based white light-emitting diodes.

  7. Structural phase transition causing anomalous photoluminescence behavior in perovskite (C{sub 6}H{sub 11}NH{sub 3}){sub 2}[PbI{sub 4}

    SciTech Connect

    Yangui, A.; Pillet, S.; Mlayah, A.; Lusson, A.; Bouchez, G.; Boukheddaden, K. E-mail: kbo@physique.uvsq.fr; Triki, S.; Abid, Y. E-mail: kbo@physique.uvsq.fr

    2015-12-14

    Optical and structural properties of the organic-inorganic hybrid perovskite-type (C{sub 6}H{sub 11}NH{sub 3}){sub 2}[PbI{sub 4}] (abbreviated as C{sub 6}PbI{sub 4}) were investigated using optical absorption, photoluminescence (PL), and x-ray diffraction measurements. Room temperature, optical absorption measurements, performed on spin-coated films of C{sub 6}PbI{sub 4}, revealed two absorption bands at 2.44 and 3.21 eV. Upon 325 nm (3.815 eV) laser irradiation, strong green PL emission peaks were observed at 2.41 eV (P1) and 2.24 eV (P2) and assigned to free and localized excitons, respectively. The exciton binding energy was estimated at 356 meV. At low temperature, two additional emission bands were detected at 2.366 eV (P3) and a large band (LB) at 1.97 eV. The former appeared only below 40 K and the latter emerged below 130 K. The thermal dependence of the PL spectra revealed an abnormal behavior accompanied by singularities in the peak positions and intensities at 40 and 130 K. X-ray diffraction studies performed on powder and single crystals as a function of temperature evidenced significant changes of the interlayer spacing at 50 K and ∼138 K. Around 138 K, a commensurate to incommensurate structural phase transition occurred on cooling. It involves a symmetry breaking leading to a distortion of the PbI{sub 6} octahedron. The resulting incommensurate spatial modulation of the Pb–I distances (and Pb–I–Pb angles) causes a spatial modulation of the band gap, which is at the origin of the emergence of the LB below ∼130 K and the anomalous behavior of the position of P1 below 130 K. The change of the interlayer spacing in the 40-50 K range may in turn be related to the significant decrease of the intensity of P2 and the maximum emission of the LB. These results underline the intricate character of the structural and the PL properties of the hybrid perovskites; understanding such properties should benefit to the design of optoelectronic devices with

  8. Structural phase transition causing anomalous photoluminescence behavior in perovskite (C6H11NH3)2[PbI4].

    PubMed

    Yangui, A; Pillet, S; Mlayah, A; Lusson, A; Bouchez, G; Triki, S; Abid, Y; Boukheddaden, K

    2015-12-14

    Optical and structural properties of the organic-inorganic hybrid perovskite-type (C6H11NH3)2[PbI4] (abbreviated as C6PbI4) were investigated using optical absorption, photoluminescence (PL), and x-ray diffraction measurements. Room temperature, optical absorption measurements, performed on spin-coated films of C6PbI4, revealed two absorption bands at 2.44 and 3.21 eV. Upon 325 nm (3.815 eV) laser irradiation, strong green PL emission peaks were observed at 2.41 eV (P1) and 2.24 eV (P2) and assigned to free and localized excitons, respectively. The exciton binding energy was estimated at 356 meV. At low temperature, two additional emission bands were detected at 2.366 eV (P3) and a large band (LB) at 1.97 eV. The former appeared only below 40 K and the latter emerged below 130 K. The thermal dependence of the PL spectra revealed an abnormal behavior accompanied by singularities in the peak positions and intensities at 40 and 130 K. X-ray diffraction studies performed on powder and single crystals as a function of temperature evidenced significant changes of the interlayer spacing at 50 K and ∼138 K. Around 138 K, a commensurate to incommensurate structural phase transition occurred on cooling. It involves a symmetry breaking leading to a distortion of the PbI6 octahedron. The resulting incommensurate spatial modulation of the Pb-I distances (and Pb-I-Pb angles) causes a spatial modulation of the band gap, which is at the origin of the emergence of the LB below ∼130 K and the anomalous behavior of the position of P1 below 130 K. The change of the interlayer spacing in the 40-50 K range may in turn be related to the significant decrease of the intensity of P2 and the maximum emission of the LB. These results underline the intricate character of the structural and the PL properties of the hybrid perovskites; understanding such properties should benefit to the design of optoelectronic devices with targeted properties. PMID:26671368

  9. Structural phase transition causing anomalous photoluminescence behavior in perovskite (C6H11NH3)2[PbI4

    NASA Astrophysics Data System (ADS)

    Yangui, A.; Pillet, S.; Mlayah, A.; Lusson, A.; Bouchez, G.; Triki, S.; Abid, Y.; Boukheddaden, K.

    2015-12-01

    Optical and structural properties of the organic-inorganic hybrid perovskite-type (C6H11NH3)2[PbI4] (abbreviated as C6PbI4) were investigated using optical absorption, photoluminescence (PL), and x-ray diffraction measurements. Room temperature, optical absorption measurements, performed on spin-coated films of C6PbI4, revealed two absorption bands at 2.44 and 3.21 eV. Upon 325 nm (3.815 eV) laser irradiation, strong green PL emission peaks were observed at 2.41 eV (P1) and 2.24 eV (P2) and assigned to free and localized excitons, respectively. The exciton binding energy was estimated at 356 meV. At low temperature, two additional emission bands were detected at 2.366 eV (P3) and a large band (LB) at 1.97 eV. The former appeared only below 40 K and the latter emerged below 130 K. The thermal dependence of the PL spectra revealed an abnormal behavior accompanied by singularities in the peak positions and intensities at 40 and 130 K. X-ray diffraction studies performed on powder and single crystals as a function of temperature evidenced significant changes of the interlayer spacing at 50 K and ˜138 K. Around 138 K, a commensurate to incommensurate structural phase transition occurred on cooling. It involves a symmetry breaking leading to a distortion of the PbI6 octahedron. The resulting incommensurate spatial modulation of the Pb-I distances (and Pb-I-Pb angles) causes a spatial modulation of the band gap, which is at the origin of the emergence of the LB below ˜130 K and the anomalous behavior of the position of P1 below 130 K. The change of the interlayer spacing in the 40-50 K range may in turn be related to the significant decrease of the intensity of P2 and the maximum emission of the LB. These results underline the intricate character of the structural and the PL properties of the hybrid perovskites; understanding such properties should benefit to the design of optoelectronic devices with targeted properties.

  10. Identification of four-hydrogen complexes in In-rich InxGa1-xN (x>0.4) alloys using photoluminescence, x-ray absorption, and density functional theory

    NASA Astrophysics Data System (ADS)

    De Luca, M.; Pettinari, G.; Ciatto, G.; Amidani, L.; Filippone, F.; Polimeni, A.; Fonda, E.; Boscherini, F.; Bonapasta, A. Amore; Giubertoni, D.; Knübel, A.; Lebedev, V.; Capizzi, M.

    2012-11-01

    Postgrowth hydrogen incorporation in In-rich InxGa1-xN (x>0.4) alloys strongly modifies the optical and structural properties of the material: A large blueshift of the emission and absorption energies is accompanied by a remarkable broadening of the interatomic-distance distribution, as probed by synchrotron radiation techniques. Both effects vanish at a finite In-concentration value (x ˜ 0.5). Synergic x-ray absorption measurements and first-principle calculations unveil two different defective species forming upon hydrogenation: one due to the high chemical reactivity of H, the other ascribed to mere lattice damage. In the former species, four H atoms bind to as many N atoms, all nearest-neighbors of a same In atom. The stability of this peculiar complex, which is predicted to behave as a donor, stems from atomic displacements cooperating to reduce local strain.

  11. Origin of photoluminescence in SrTiO{sub 3}: a combined experimental and theoretical study

    SciTech Connect

    Orhan, Emmanuelle . E-mail: emmanuelle.orhan@liec.ufscar.br; Pontes, Fenelon M.; Pinheiro, Carlos D.; Leite, Edson R.; Pizani, Paulo S.; Beltran, Armando; Andres, Juan; Varela, Jose A.; Longo, Elson

    2004-11-01

    A joint experimental and theoretical study has been carried out to rationalize the photoluminescence properties of SrTiO{sub 3} perovskite thin films synthesized through a soft chemical processing. Only the amorphous samples present photoluminescence at room temperature. From the theoretical side, first principles quantum mechanical techniques, based on density functional theory at B3LYP level, have been employed to study the electronic structure of a crystalline (ST-c) and an asymmetric (ST-a) model. Electronic properties are analyzed in the light of the experimental results and their relevance in relation to the PL behavior of ST is discussed.

  12. Magnetic and photoluminescence studies of electron irradiated Bi2Fe4O9 nanoparticles

    NASA Astrophysics Data System (ADS)

    Rao, Prashanth K. S.; Krishnan, Sheeja; Pattabi, Manjunatha; Sanjeev, Ganesh

    2016-03-01

    The effect of 8 MeV electron irradiation on the magnetic and photoluminescence properties of Bi2Fe4O9 has been investigated and reported in this paper. Magnetic parameters of unirradiated and irradiated Bi2Fe4O9 nanoparticles were investigated by Vibrating sample magnetometer (VSM). Modification in saturation magnetization, remanence magnetization and coercivity were observed after exposure of Bi2Fe4O9 nanoparticles to high energy electrons. A decrease in the intensity of photoluminescence (PL) spectra was observed in irradiated samples compared to the unirradiated samples.

  13. Impact of the hydrogen content on the photoluminescence efficiency of amorphous silicon alloys

    SciTech Connect

    Kistner, J.; Schubert, M. B.

    2013-12-07

    This paper analyzes the impact of hydrogen on the photoluminescence (PL) efficiency of the three wide gap silicon alloys: silicon carbide (a-SiC{sub x}), silicon nitride (a-SiN{sub x}): silicon oxide (a-SiO{sub x}). All three materials behave similarly. The progression of the PL efficiency over the Si content splits into two regions. With decreasing Si content, the PL efficiency increases until a maximum is reached. With a further decrease of the Si content, the PL efficiency declines again. A comprehensive analysis of the sample structure reveals that the PL efficiency depends on the degree of passivation of Si and Y atoms (Y = C, N, O) with hydrogen. For samples with a high Si content, an effective passivation of incorporated Y atoms gives rise to an increasing PL efficiency. The PL efficiency of samples with a low Si content is limited due to a rising amount of unpassivated Si defect states. We find that a minimum amount of 0.2 H atoms per Si atom is required to maintain effective luminescence.

  14. Radiation-stimulated photoluminescence in electron irradiated 4H-SiC

    NASA Astrophysics Data System (ADS)

    Lebedev, A. A.; Ber, B. Ya; Seredova, N. V.; Kazantsev, D. Yu; Kozlovski, V. V.

    2015-12-01

    The photoluminescence (PL) arising in low doped CVD grown n- and p-type 4H-SiC upon electron irradiation (0,9 MeV) has been studied. After each doze of irradiation spectrum of PL was measured. The PL spectrum was dominated by a band peaked at hv  ≈  2,45 eV, commonly observed upon irradiation of SiC. The experiments demonstrated that, for samples with both types of conduction, the PL intensity approaches a constant value with increasing irradiation dose. A model was suggested, describing the PL characteristics in terms of the radiative recombination via a donor-acceptor pair constituted by nitrogen and a structural defect formed in the course of irradiation. Also, the concentration of nitrogen atoms was measured by the SIMS method. The experimental data were used to calculate in terms of the suggested model the dependence of the PL intensity on the irradiation dose. A good agreement between the calculated and experimental dependences was observed. A conclusion is made that the PL is activated by donor—acceptor pairs constituted by a nitrogen atom and a structural defect.

  15. Strong photoluminescence enhancement of MoS(2) through defect engineering and oxygen bonding.

    PubMed

    Nan, Haiyan; Wang, Zilu; Wang, Wenhui; Liang, Zheng; Lu, Yan; Chen, Qian; He, Daowei; Tan, Pingheng; Miao, Feng; Wang, Xinran; Wang, Jinlan; Ni, Zhenhua

    2014-06-24

    We report on a strong photoluminescence (PL) enhancement of monolayer MoS2 through defect engineering and oxygen bonding. Micro-PL and Raman images clearly reveal that the PL enhancement occurs at cracks/defects formed during high-temperature annealing. The PL enhancement at crack/defect sites could be as high as thousands of times after considering the laser spot size. The main reasons of such huge PL enhancement include the following: (1) the oxygen chemical adsorption induced heavy p doping and the conversion from trion to exciton; (2) the suppression of nonradiative recombination of excitons at defect sites, which was verified by low-temperature PL measurements. First-principle calculations reveal a strong binding energy of ∼2.395 eV for an oxygen molecule adsorbed on a S vacancy of MoS2. The chemically adsorbed oxygen also provides a much more effective charge transfer (0.997 electrons per O2) compared to physically adsorbed oxygen on an ideal MoS2 surface. We also demonstrate that the defect engineering and oxygen bonding could be easily realized by mild oxygen plasma irradiation. X-ray photoelectron spectroscopy further confirms the formation of Mo-O bonding. Our results provide a new route for modulating the optical properties of two-dimensional semiconductors. The strong and stable PL from defects sites of MoS2 may have promising applications in optoelectronic devices. PMID:24836121

  16. Room temperature photoluminescence at 4.5 {mu}m from InAsN

    SciTech Connect

    Zhuang, Q.; Godenir, A. M. R.; Krier, A.; Lai, K. T.; Haywood, S. K.

    2008-03-15

    Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy was investigated as a function of growth conditions. Reduced growth rate, growth temperature, and arsenic flux significantly enhance the nitrogen incorporation. Optimal growth conditions allowed us to obtain high quality InAsN with nitrogen composition of up to 2.5%. The epilayers exhibit intense 4 K photoluminescence (PL) with double-peak features, which were attributed to free carrier recombination and localized carrier recombination. Strong room temperature PL emission up to a wavelength of 4.5 {mu}m is obtained.

  17. Effects of electrolyte gating on photoluminescence spectra of large-area WSe2 monolayer films

    NASA Astrophysics Data System (ADS)

    Matsuki, Keiichiro; Pu, Jiang; Kozawa, Daichi; Matsuda, Kazunari; Li, Lain-Jong; Takenobu, Taishi

    2016-06-01

    We fabricated electric double-layer transistors comprising large-area WSe2 monolayers and investigated the effects of electrolyte gating on their photoluminescence (PL) spectra. Using the efficient gating effects of electric double layers, we succeeded in the application of a large electric field (∼107 V cm‑1) and the accumulation of high carrier density (>1013 cm‑2). As a result, we observed PL spectra based on both positively and negatively charged excitons and their gate-voltage-dependent redshifts, suggesting the effects of both an electric field and charge accumulation.

  18. Photoluminescent carbon dots synthesized by microwave treatment for selective image of cancer cells.

    PubMed

    Yang, Xudong; Yang, Xue; Li, Zhenyu; Li, Shouying; Han, Yexuan; Chen, Yang; Bu, Xinyuan; Su, Chunyan; Xu, Hong; Jiang, Yingnan; Lin, Quan

    2015-10-15

    In this work, a simple, low-cost and one-step microwave approach has been demonstrated for the synthesis of water-soluble carbon dots (C-dots). The average size of the resulting C-dots is about 4 nm. From the photoluminescence (PL) measurements, the C-dots exhibit excellent biocompatibility and intense PL with the high quantum yield (QY) at Ca. 25%. Significantly, the C-dots have excellent biocompatibility and the capacity to specifically target the cells overexpressing the folate receptor (FR). These exciting results indicate the as-prepared C-dots are promising biocompatible probe for cancer diagnosis and treatment. PMID:26074383

  19. Determination of the Exciton Binding Energy Using Photothermal and Photoluminescence Spectroscopy

    NASA Astrophysics Data System (ADS)

    Strzałkowski, K.; Zakrzewski, J.; Maliński, M.

    2013-04-01

    In this paper, experimental photoluminescence (PL) and piezoelectric photothermal (PPT) spectra of selected II-VI binary crystals are presented and analyzed. The quantitative analysis of the photothermal spectra was performed using a modified and extended Jackson-Amer model. The values of the bandgap energies of investigated semiconductors were computed from the PT amplitude and phase spectra. From the temperature dependence of the exciton emission so-called "excitonic energy gaps" have been determined. It follows from the theory that the exciton binding energy is the difference of these two values of energy gaps derived from PPT and PL spectroscopy.

  20. Transverse-microcavity modulation of photoluminescence from GaN nanowires

    NASA Astrophysics Data System (ADS)

    Long, J. P.; Flynn, R. A.; Vurgaftman, I.; Simpkins, B. S.; Mäkinen, A. J.; Mastro, M. A.; Pehrsson, P. E.

    2010-09-01

    Spatially resolved photoluminescence (PL) spectra from tapered GaN nanowires (NWs) with triangular cross section exhibit marked intensity modulations along the NW length. The modulation periodicity is attributed to previously unrecognized, leaky transverse standing-waves that occur when the PL wavelength matches path length criteria. These Fabry-Perot modes can affect optical measurements in transparent nanostructures even for dimensions less than ˜λ/2n, where λ is the free-space wavelength and n is the index of refraction.

  1. Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands

    PubMed Central

    2011-01-01

    The formation of circularly ordered Ge-islands on Si(001) has been achieved because of nonuniform strain field around the periphery of the holes patterned by focused ion beam in combination with a self-assembled growth using molecular beam epitaxy. The photoluminescence (PL) spectra obtained from patterned areas (i.e., ordered islands) show a significant signal enhancement, which sustained till 200 K, without any vertical stacking of islands. The origin of two activation energies in temperature-dependent PL spectra of the ordered islands has been explained in detail. PMID:21711943

  2. Experimental (FTIR, Raman, UV-visible and PL) and theoretical (DFT and TDDFT) studies on bis(8-hydroxyquinolinium) tetrachlorocobaltate(II) compound

    NASA Astrophysics Data System (ADS)

    Chaouachi, Soumaya; Elleuch, Slim; Hamdi, Besma; Zouari, Ridha

    2016-12-01

    The purpose of this paper is to present the chemical preparation, crystal structure, vibrational study and optical features for new organic-inorganic compound [C9H8NO]2CoCl4 abbreviated [8-HQ]2CoCl4. The structural study by X-ray diffraction prove that this compound crystallize in a monoclinic unit-cell with space group C2/c (point group 2/m = C2h). It is built of tetrahedra [CoCl4]2- anions and (C9H8NO)+ cations in the 1/2 ratio. The crystal structure is stabilized by network three-dimensional of Nsbnd H⋯Cl, Nsbnd H⋯O, Osbnd H⋯Cl, Csbnd H⋯Cl hydrogen bonds, and offset π-π stacking interactions. Also, the Hirshfeld Surface projections and Fingerprint plots were elucidated the relative contribution of the type, nature and explore the H⋯Cl, C⋯H, C⋯C, C⋯N, H⋯O intermolecular contacts in the crystal in a visual manner. Furthermore, vibrational analysis of the structural groups in the compound was carried out by both Fourier transforms infrared (FT-IR) and Raman spectra. The spectral data are complemented by good information at the region characteristic of metal-ligand, which evidences coordination through the compound. The optical properties of the crystal were studied by using optical absorption UV-visible and photoluminescence (PL) spectroscopy studies. Theoretical calculations were performed using density functional theory (DFT) at (DFT/B3LYP/LanL2DZ) level in the aim of aiding in studying structural, vibrational and optical properties of the investigated compound. Good relationship consistency is found between the experimental and theoretical studies. Inspection of the optical properties has lead to confirm the exhibition of a green photoluminescence and the occurrence of charge transfer phenomenon in this material.

  3. Effect of heat treatment on the structure of incorporated oxalate species and photoluminescent properties of porous alumina films formed in oxalic acid

    NASA Astrophysics Data System (ADS)

    Vrublevsky, I.; Jagminas, A.; Hemeltjen, S.; Goedel, W. A.

    2008-09-01

    The present work focuses on the use of IR spectroscopy and photoluminescence spectral measurements for studying the treatment temperature effect on the compositional and luminescent properties of oxalic acid alumina films. In line with the recent researches we have also found that heat treatment of porous alumina films formed in oxalic acid leads to considerable changes in their photoluminescence properties: upon annealing the intensity of photoluminescence (PL) increases reaching a maximum at the temperature of around 500 °C and then decreases. IR spectra of as-grown and heat-treated films have proved that PL emission in the anodic alumina films is related with the state of 'structural' oxalate species incorporated in the oxide lattice. These results allowed us to conclude that PL behavior of oxalic acid alumina films can be explained through the concept of variations in the bonding molecular orbitals of incorporated oxalate species including σ- and π-bonds.

  4. Photoluminescence of Sequential Infiltration Synthesized ZnO nanostructures

    NASA Astrophysics Data System (ADS)

    Ocola, Leonidas; Gosztola, David; Yanguas-Gil, Angel; Connolly, Aine

    We have investigated a variation of atomic layer deposition (ALD), called sequential infiltration synthesis (SiS), as an alternate method to incorporate ZnO and other oxides inside polymethylmethacrylate (PMMA) and other polymers. Energy dispersive spectroscopy (EDS) results show that we synthesize ZnO up to 300 nm inside a PMMA film. Photoluminescence data on a PMMA film shows that we achieve a factor of 400X increase in photoluminescence (PL) intensity when comparing a blank Si sample and a 270 nm thick PMMA film, where both were treated with the same 12 alternating cycles of H2O and diethyl zinc (DEZ). PMMA is a well-known ebeam resist. We can expose and develop patterns useful for photonics or sensing applications first, and then convert them afterwards into a hybrid polymer-oxide material. We show that patterning does indeed affect the photoluminescence signature of native ZnO. We demonstrate we can track the growth of the ZnO inside the PMMA polymer using both photoluminescence and Raman spectroscopy and determine the point in the process where ZnO is first photoluminescent and also at which point ZnO first exhibits long range order in the polymer. This work was supported by the Department of Energy under Contract No. DE-AC02-06CH11357. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

  5. Photoluminescence mechanism for blue-light-emitting porous silicon

    NASA Astrophysics Data System (ADS)

    Qin, G. G.; Liu, X. S.; Ma, S. Y.; Lin, J.; Yao, G. Q.; Lin, X. Y.; Lin, K. X.

    1997-05-01

    A comparative study of photoluminescence (PL) and photoluminescence excitation (PLE) spectra of porous silicon (PS) and Si oxide, both emitting blue light, is reported. The PLE spectrum of Si oxide monitored at 460 nm displays a three-peak structure with peak wavelengths around 265, 300, and 360 nm. The PLE intensity of the PS sample increases with decreasing excitation wavelength, and has three shoulders located at wavelengths near the three PLE peak wavelengths of Si oxide. When the PS sample is oxidized for half an hour at 1150 °C [the temperature at which nanometer Si particles (NSP's) inside PS disappear], blue-light PL intensity reduces greatly, and its PLE spectrum changes into a spectrum very similar to that of Si oxide. The experimental result strongly indicates that for the blue-light emission from PS there are two types of photoexcitation processes: photoexcitation occurs in NSP"s and in the Si oxide layers covering NSP's, and radiative recombination of electron-hole pairs is carried out in luminescence centers located on the interfaces between NSP"s and Si oxide and in those inside Si oxide layers.

  6. Spontaneous circular polarization of photoluminescence from WS2 single layers

    NASA Astrophysics Data System (ADS)

    Scrace, Thomas; Tsai, Yutsung; Barman, Biplob; Zhang, Peiyao; Petrou, Athos; Kioseoglou, George; Korkusinski, Marek; Ozfidan, Isil; Hawrylak, Pawel

    2015-03-01

    We have carried out a magnetoluminescence study of WS2 single layer crystals excited with linearly polarized light. The photoluminescence (PL) contains two features. The first is associated with the neutral exciton (X0) ; the second feature is due to the recombination of negatively charged excitons (X-) in the presence of a two-dimensional electron gas (2DEG). The X- - 2 DEG feature has a non-zero circular polarization up to 19% at zero magnetic field even though the PL excitation light is linearly polarized. The circular polarization is effected by an external magnetic field applied perpendicular to the crystal plane at 2 % / Tesla . The zero field circular polarization of the X- - 2 DEG photoluminescence feature is interpreted as due to the existence of a spontaneously valley polarized 2DEG. This is a new state possible in WS2 due to valley and spin locking and a strong electron-electron interaction. Work at SUNY Buffalo has been supported by ONR. I.O., M.K. and P.H. acknowledge support of NRC QPSS program and of NSERC.

  7. Synthesis of ZnO flowers and their photoluminescence properties

    SciTech Connect

    Wu Changle; Qiao Xueliang Luo Langli; Li Haijun

    2008-07-01

    Flower-like ZnO nano/microstructures have been synthesized by thermal treatment of Zn(NH{sub 3}){sub 4}{sup 2+} precursor in aqueous solvent, using ammonia as the structure directing agent. A number of techniques, including X-ray diffraction (XRD), field emission scan electron microscopy (FESEM), transmission electron microscopy (TEM), thermal analysis, and photoluminescence (PL) were used to characterize the obtained ZnO structures. The photoluminescence (PL) measurements indicated that the as-synthesized ZnO structures showed UV ({approx}375 nm), blue ({approx}465 nm), and yellow ({approx}585 nm) emission bands when they were excited by a He-Gd laser using 320 nm as the excitation source. Furthermore, it has been interestingly found that the intensity of light emission at {approx}585 nm remarkably decreased when the obtained ZnO nanocrystals were annealed at 600 deg. C for 3 h in air. The reason might be the possible oxygen vacancies and interstitials in the sample decreased at high temperature.

  8. A biomimetic tongue by photoluminescent metal-organic frameworks.

    PubMed

    Lee, Tu; Lin Lee, Hung; Hsun Tsai, Meng; Cheng, Shao-Liang; Lee, Sheng-Wei; Hu, Jung-Chih; Chen, Lien-Tai

    2013-05-15

    The taste sensing capabilities of a "biomimetic tongue" based on the photoluminescence (PL) responses of metal-organic frameworks (MOFs), [In(OH)(bdc)]n (bdc=1,4-benzenedicarboxylate), [Tb(btc)]n (MOF-76, btc=benzene-1,3,5-tricarboxylate), and [Ca3(btc)2(DMF)2(H2O)2]·3H2O are proven on aqueous solutions of five basic tastants: sucrose (sweet), caffeine (bitter), citric acid (sour), sodium chloride (salty) and monosodium glutamate (umami). For [In(OH)(bdc)]n, the tastant interacts stereochemically with poly(acrylic acid) (PAA) and alters its conformations. The frequency and magnitude of chelation between COO(-) pendant groups of PAA and In(3+) nodes of [In(OH)(bdc)]n framework influence the corresponding PL reponses. For MOF-76, the tastant interacts with incorporated water in MOF-76 through hydrogen bonding. The limitation of O-H bond stretching of water results in the enhancement of the PL intensity. For [Ca3(BTC)2(DMF)2(H2O)2]·3H2O, it is added as a third MOF component to increase the precision on taste discrimination. The significance of MOF-based "biomimetic tongue" includes: (1) PAA on [In(OH)(bdc)]n mimics the taste receptor cells (TRCs) for their structural flexibility, (2) the Weber-Fechner law of human sensing that sensation is proportional to the logarithm of the stimulus intensity is observed between the PL emission response of MOF-76 and the concentration of tastant, (3) the strength of taste is quantified by the τ scale and the PL emission intensity of MOF-76, which are dependent on the logarithmic tastant concentration, (4) the tastant is identified by the shape of the 3D principal component analysis contour map (i.e., pattern recognition method), and (5) the fabrication of [In(OH)(bdc)]n/PAA film by brushing is illustrated. PMID:23277340

  9. Structural and photoluminescence properties of Ce, Dy, Er-doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Jayachandraiah, C.; Kumar, K. Siva; Krishnaiah, G.

    2015-06-01

    Undoped ZnO and rare earth elements (Ce, Dy and Er with 2 at. %) doped nanoparticles were synthesized by wet chemical co-precipitation method at 90°C with Polyvinylpyrrolidone (PVP) as capping agent. The structural, morphological, compositional and photoluminescence studies were performed with X-ray diffraction (XRD), Transmission electron microscopy (TEM), Energy dispersive spectroscopy (EDS), FTIR spectroscopy and Photoluminescence (PL) respectively. XRD results revealed hexagonal wurtzite structure with average particle size around 18 nm - 14 nm and are compatible with TEM results. EDS confirm the incorporation of Ce, Dy and Er elements into the host ZnO matrix and is validated by FTIR analysis. PL studies showed a broad intensive emission peak at 558 nm in all the samples. The intensity for Er- doped ZnO found maximum with additional Er shoulder peaks at 516nm and 538 nm. No Ce, Dy emission centers were found in spectra.

  10. Photoluminescence and thermoluminescence studies of CaAl2O4:Dy(3+) phosphor.

    PubMed

    Ziyauddin, Mohammad; Tigga, Shalinta; Brahme, Nameeta; Bisen, D P

    2016-02-01

    Calcium aluminate phosphors activated by Dy(3+) have been prepared by a combustion method at a temperature of 600°C. Photoluminescence (PL) and thermoluminescence (TL) properties of gamma-irradiated Dy-doped calcium aluminate were investigated. The PL spectrum shows a broad peak around 488 nm and 573 nm, under 347 nm excitation. Thermoluminescence studies were performed for different concentrations of Dy. Optimum intensity of photoluminescence was found for 0.02 mol% concentration of Dy. It was found that initially the peak TL intensity increases with increasing concentration of Dy in the CaAl2O4 host, attains a maximum value for 0.05 mol% concentration and decreases with further increase in the doping concentration due to concentration quenching. PMID:25920456

  11. Structural and photoluminescence properties of Ce, Dy, Er-doped ZnO nanoparticles

    SciTech Connect

    Jayachandraiah, C.; Kumar, K. Siva; Krishnaiah, G.

    2015-06-24

    Undoped ZnO and rare earth elements (Ce, Dy and Er with 2 at. %) doped nanoparticles were synthesized by wet chemical co-precipitation method at 90°C with Polyvinylpyrrolidone (PVP) as capping agent. The structural, morphological, compositional and photoluminescence studies were performed with X-ray diffraction (XRD), Transmission electron microscopy (TEM), Energy dispersive spectroscopy (EDS), FTIR spectroscopy and Photoluminescence (PL) respectively. XRD results revealed hexagonal wurtzite structure with average particle size around 18 nm - 14 nm and are compatible with TEM results. EDS confirm the incorporation of Ce, Dy and Er elements into the host ZnO matrix and is validated by FTIR analysis. PL studies showed a broad intensive emission peak at 558 nm in all the samples. The intensity for Er- doped ZnO found maximum with additional Er shoulder peaks at 516nm and 538 nm. No Ce, Dy emission centers were found in spectra.

  12. Electric Field Dependent Photoluminescence in Atomically Thin Transition Metal Dichalcogenides van der Waals Heterostructures

    NASA Astrophysics Data System (ADS)

    Jauregui, Luis A.; High, Alex A.; Dibos, Alan; Joe, Andrew; Gulpinar, Elgin; Park, Hongkun; Kim, Philip

    uregui, Alex A. High, Alan Dibos, Andrew Joe, Elgin Gulpinar, Hongkun Park, Philip Kim Harvard University, Physics Department -abstract- Single layer transition metal dichalcogenides (TMDC) are 2-dimensional (2D) semiconductors characterized by a direct optical bandgap and large exciton binding energies (>100 meV). We fabricate CQW heterostructures made of 2D TMDCs with hexagonal Boron nitride (BN) as atomically thin barrier and gate dielectric, with top and bottom gate electrodes. We study the evolution of photoluminescence (PL) spectrum with varying BN barrier thickness, electric field, temperature and polarization. Our measured low-temperature (T = 3K) PL peaks show full width at half maxima on the order of ~3meV. We identify the photoluminescence peaks, corresponding to the charged exciton emission, which red shifts and its brightness increases while the neutral exciton emission becomes darker for increasing electric field.

  13. On the origin of the spatial inhomogeneity of photoluminescence in thin-film CIGS solar devices

    NASA Astrophysics Data System (ADS)

    El-Hajje, Gilbert; Ory, Daniel; Guillemoles, Jean-François; Lombez, Laurent

    2016-07-01

    In this letter, we investigate the origin of the spatial inhomogeneity of the photoluminescence (PL) intensity maps obtained on thin-film solar cells. Based on a hyperspectral imager setup, we record an absolute map of the quasi-Fermi level splitting Δμ by applying the generalized Planck's law. Then, using scanning confocal microscopy, we perform spatially and time-resolved photoluminescence measurements. This allowed us to quantify and map the micrometric fluctuations of the trapping defect density within these solar cells. Finally, we demonstrate the existence of a direct correlation between the spatial fluctuations of the quasi-Fermi level splitting and the trapping defect density. The latter was found to be correlated with the frequently reported spatially inhomogeneous PL maps of thin-film solar cells. Based on the observed correlation, we can quantify the local losses in quasi-Fermi level splitting induced by the spatial distribution of the trapping defects.

  14. Photoluminescence in disordered Zn{sub 2}TiO{sub 4}

    SciTech Connect

    Chaves, Alexsandra C.; Lima, Severino J.G.; Araujo, Regiane C.M.U.; Maurera, Maria Aldeiza M.A.; Longo, Elson; Pizani, Paulo S.; Simoes, Luiz G.P.; Soledade, Luiz E.B.; Souza, Antonio G.; Santos, Ieda Maria Garcia dos . E-mail: ieda@quimica.ufpb.br

    2006-04-15

    In this work, the polymeric precursor method was used to obtain disordered Zn{sub 2}TiO{sub 4} powders, either undoped or doped with Sn{sup 4+}, Cr{sup 3+} and V{sup 5+}, to be applied as photoluminescent material. The characterization was undertaken by means of thermal analysis (TG and DTA), X-ray diffraction (XRD), infrared spectroscopy (IR) and photoluminescence (PL). Previous works stated that titanate octahedra containing a short Ti-O distance show efficient luminescence at room temperature if these octahedra are isolated from each other. In the present work, the phenomenon was observed in condensed octahedra, sharing edges. The room temperature PL noticed in undoped Zn{sub 2}TiO{sub 4} had its intensity increased by the dopant addition-the increase was of about 300% for V{sup 5+} doping, 400% for Cr{sup 3+} and 800% for Sn{sup 4+}.

  15. μ-EXAFS, μ-XRF, and μ-PL characterization of a multi-quantum-well electroabsorption modulated laser realized via selective area growth.

    PubMed

    Mino, Lorenzo; Gianolio, Diego; Agostini, Giovanni; Piovano, Andrea; Truccato, Marco; Agostino, Angelo; Cagliero, Stefano; Martinez-Criado, Gema; d'Acapito, Francesco; Codato, Simone; Lamberti, Carlo

    2011-04-01

    In the past few years, strong efforts have been devoted to improving the frequency of optical-fiber communications. In particular, the use of a special kind of integrated optoelectronic device called an electroabsorption modulated laser (EML) allows communication at 10 Gb s(-1) or higher over long propagation spans (up to 80 km). Such devices are realized using the selective area growth (SAG) technique and are based on a multiple quantum well (MQW) distributed-feedback laser (DFB) monolithically integrated with a MQW electroabsorption modulator (EAM). Since the variation in the chemical composition between these two structures takes place on the micrometer scale, in order to study the spatial variation of the relevant parameters of the MQW EML structures, the X-ray microbeam available at the ESRF ID22 beamline is used. The effectiveness of the SAG technique in modulating the chemical composition of the quaternary alloy is proven by a micrometer-resolved X-ray fluorescence (μ-XRF) map. Here, reported micrometer-resolved extended X-ray absorption fine structure (μ-EXAFS) spectra represent the state of the art of μ-EXAFS achievable at third-generation synchrotron radiation sources. The results are in qualitative agreement with X-ray diffraction (XRD) and micrometer-resolved photoluminescence (μ-PL) data, but a technical improvement is still crucial in order to make μ-EXAFS really quantitative on such complex heterostructures. PMID:21404439

  16. High Performance Photoluminescent Carbon Dots for In Vitro and In Vivo Bioimaging: Effect of Nitrogen Doping Ratios.

    PubMed

    Wang, Junqing; Zhang, Pengfei; Huang, Chao; Liu, Gang; Leung, Ken Cham-Fai; Wáng, Yì Xiáng J

    2015-07-28

    Photoluminescent carbon dots (CDs) have received ever-increasing attention in the application of optical bioimaging because of their low toxicity, tunable fluorescent properties, and ultracompact size. We report for the first time on enhanced photoluminescence (PL) performance influenced by structure effects among the various types of nitrogen doped (N-doped) PL CDs. These CDs were facilely synthesized from condensation carbonization of linear polyethylenic amine (PEA) analogues and citric acid (CA) of different ratios. Detailed structural and property studies demonstrated that either the structures or the molar ratio of PEAs altered the PL properties of the CDs. The content of conjugated π-domains with C═N in the carbon backbone was correlated with their PL Quantum Yield (QY) (up to 69%). The hybridization between the surface/molecule state and the carbon backbone synergistically affected the chemical/physical properties. Also, long-chain polyethylenic amine (PEA) molecule-doped CDs exhibit increasing photostability, but at the expense of PL efficiency, proving that the PL emission of high QY CDs arise not only from the sp(2)/sp(3) carbon core and surface passivation of CDs, but also from the molecular fluorophores integrated in the CDs. In vitro and in vivo bioimaging of these N-doped CDs showed strong photoluminescence signals. Good biocompatibility demonstrates their potential feasibility for bioimaging applications. In addition, the overall size profile of the as-prepared CDs is comparable to the average size of capillary pores in normal living tissues (∼5 nm). Our study provides valuable insights into the effects of the PEA doping ratios on photoluminescence efficiency, biocompatibility, cellular uptake, and optical bioimaging of CDs. PMID:26135003

  17. Enhancement of photoluminescence of different quantum dots by Ag@SiO{sub 2} core–shell nanoparticles

    SciTech Connect

    Chang, Ya-Hsing; Lu, Yu-Chieh; Chou, Kan-Sen

    2013-06-01

    Highlights: ► Enhancement effects of CdS/ZnS, Cd{sub 0.3}Pb{sub 0.7}S and ZnS QDs linked to Ag@SiO{sub 2} nanoparticles were studied. ► There existed an optimal thickness of SiO{sub 2} shell on the enhancement. ► The enhancement factor was in the range of 2.5–3 for CdS/ZnS and Cd{sub 0.3}Pb{sub 0.7}S QDs. ► The PL intensity of ZnS QD was totally quenched due to absorption by silver particles. - Abstract: The enhancement of photoluminescence of several quantum dots, namely CdS/ZnS, Cd{sub 0.3}Pb{sub 0.7}S and pure ZnS, by Ag@SiO{sub 2} core–shell nanoparticles is studied and reported in this work. 3-Aminopropyltriethoxysilane (APS) was used to link QDs to the core–shell nanoparticles. For CdS/ZnS, the Ag@SiO{sub 2} nanoparticles showed a maximum enhancement of about 2.5 due to surface plasmon resonance of silver particles when the shell thickness was 16 nm. When the shell thickness increased to 30 nm, the enhancement effect became negligible. Conversely, when the thickness decreased to 6 nm, the effect was also smaller due to possible capture of excited electrons by silver particles. For Cd{sub 0.3}Pb{sub 0.7}S, a similar enhancement effect was observed. However when pure ZnS was the QD, the photoluminescence went zero after the QD was linked to Ag@SiO{sub 2} nanoparticles. This was caused by the fact that for ZnS QDs, the emission wavelength was 415 nm, which also corresponds to the absorbance peak of silver particles.

  18. Molybdenum disulfide quantum dots as a photoluminescence sensing platform for 2,4,6-trinitrophenol detection.

    PubMed

    Wang, Yong; Ni, Yongnian

    2014-08-01

    Transition metal chalcogenides, especially molybdenum disulfide (MoS2), have recently attracted wide attention from researchers as graphene-analogous materials. However, until now, little literature has reported the synthesis of photoluminescent MoS2 materials and their applications in analytical chemistry. We herein presented a facile bottom-up hydrothermal route for the synthesis of photoluminescent MoS2 quantum dots (QDs) by using sodium molybdate and cysteine as precursors. The prepared MoS2 QDs were characterized by transmission electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, photoluminescence spectroscopy, and UV-vis spectroscopy. The MoS2 QDs were then used as photoluminescent probes to construct a photoluminescence (PL) quenching sensor for detection of 2,4,6-trinitrophenol (TNP). The TNP sensor presented a wide linear range from 0.099 to 36.5 μM with a high detection limit of 95 nM. Furthermore, the sensor displayed a high sensitivity toward TNP over other structurally similar compounds like 2,4,6-trinitrotoluene, p-chlorophenol, phenol, and 2,6-di-tert-butyl-4-methylphenol. To understand the origin of the high sensitivity, we assessed the emission wavelength-dependent PL quenching behavior of MoS2 QDs by the above five compounds using Stem-Volmer equation in detail. The results showed that the novel approach we put forward can satisfactorily explain the interaction mechanisms between MoS2 QDs and the five compounds, and the high sensitivity for TNP very likely originated from a combination of the PL resonance energy transfer, electronic energy transfer, and electrostatic interactions between MoS2 QDs and TNP. Finally, the sensor was successfully applied for detection of TNP in water samples and test papers. PMID:25001878

  19. Self-assembly and photoluminescence evolution of hydrophilic and hydrophobic quantum dots in sol–gel processes

    SciTech Connect

    Yang, Ping; Matras-Postolek, Katarzyna; Song, Xueling; Zheng, Yan; Liu, Yumeng; Ding, Kun; Nie, Shijie

    2015-10-15

    Graphical abstract: Highly luminescent quantum dots (QDs) with tunable photoluminescence (PL) wavelength were assembled into various morphologies including chain, hollow spheres, fibers, and ring structures through sol–gel processes. The PL properties during assembly as investigated. - Highlights: • Highly luminescent quantum dots (QDs) were synthesized from several ligands. • The evolution of PL in self-assembly via sol–gel processes was investigated. • CdTe QDs were assembled into a chain by controlling hydrolysis and condensation reactions. • Hollow spheres, fibers, and ring structures were created via CdSe/ZnS QDs in sol–gel processes. - Abstract: Highly luminescent quantum dots (QDs) with tunable photoluminescence (PL) wavelength were synthesized from several ligands to investigate the PL evolution in QD self-assembly via sol–gel processes. After ligand exchange, CdTe QDs were assembled into a chain by controlling the hydrolysis and condensation reaction of 3-mercaptopropyl-trimethoxysilane. The chain was then coated with a SiO{sub 2} shell from tetraethyl orthosilicate (TEOS). Hollow spheres, fibers, and ring structures were created from CdSe/ZnS QDs via various sol–gel processes. CdTe QDs revealed red-shifted and narrowed PL spectrum after assembly compared with their initial one. In contrast, the red-shift of PL spectra of CdSe/ZnS QDs is small. By optimizing experimental conditions, SiO{sub 2} spheres with multiple CdSe/ZnS QDs were fabricated using TEOS and MPS. The QDs in these SiO{sub 2} spheres retained their initial PL properties. This result is useful for application because of their high stability and high PL efficiency of 33%.

  20. Photoluminescence of Erbium-Doped Potassium Tantalate Niobate Polycrystalline

    NASA Astrophysics Data System (ADS)

    Wen, Cheng‑Hung; Chu, Sheng‑Yuan; Shin, Yan‑Yu; Wen, Cheng‑Kuo

    2006-07-01

    In this study, we investigated the luminescence properties of erbium-doped potassium tantalite niobate (KTaxNb1-xO3 or KTN) ceramics, which were prepared by the conventional solid-state reaction synthesis method. In this work, we studied the relationships of the crystal structure, and Raman and photoluminescence (PL) spectra with the tantalum concentration, respectively. The experiments showed that the tantalum dopants modified the intensity of the green, red and near-infrared emission bands. The experiments also showed a blue shift for the 2 mol % erbium doped KTN samples with different tantalum compositions. Doping Ta not only led to the change in PL intensity but also in spectral shapes. The PL spectra showed the splitting peaks for the samples with low Ta compositions. Then these peaks combined and broadened as Ta concentration increase. When Ta was substituted for Nb completely, the luminescence intensity of the green emission band had an increase of approximately about one order of magnitude, which was because of the absence of the first-order phonon relaxation in the high-Ta-concentration samples.

  1. Photoluminescence of He-implanted ZnO

    SciTech Connect

    Hamby, D. W.; Lucca, D. A.; Lee, J.-K.; Nastasi, Michael Anthony,

    2004-01-01

    A study of the effects of ion-implanted He{sup +} on the 4.2 K photoluminescence (PL) of ZnO is presented. This investigation is motivated by the need to further understand the effects of damage resulting from the implantation process on the PL of ZnO. For this study, 10 keV He{sup +} ions were implanted at a dose of 2.5 x 10{sup 13}/cm{sup 2} in the (0001) Zn-terminated surface. The implantation process is seen to reduce the overall luminescence efficiency, although the number and relative intensities of the bound-exciton peaks are observed to be similar to that of unimplanted ZnO. The 4.2 K PL of the implanted surface exhibits a broad orange/red peak near 1.86 eV nm and is attributed to damage introduced during the implantation process. This peak is identified as donor-acceptor pair (DAP) luminescence with a thermal activation energy of 11 meV. The 1.86 eV peak is not observed for H-implanted ZnO suggesting that H passivates the implantation-induced defects responsible for this luminescence.

  2. Preparation and photoluminescence study of mesoporous indium hydroxide nanorods

    SciTech Connect

    Li, Changyu; Lian, Suoyuan; Liu, Yang; Liu, Shouxin; Kang, Zhenhui

    2010-02-15

    Mesoporous indium hydroxide nanorods were successfully synthesized by a mild one-step one-pot method. The obtained samples were characterized by X-ray diffraction, transmission electron microscopy with selected area electron diffraction, N{sub 2} adsorption, ultraviolet-visible absorption and photoluminescence, respectively. Transmission electron microscopy showed that there were some pores in the samples, which were mainly composed of rod-like shapes with length of 300 nm and diameter of 90 nm. N{sub 2} adsorption/desorption measurements confirmed that the prepared powder was mesoporous with average pore diameter of 3.1 nm. The ultraviolet-visible absorption spectroscopy analysis indicated that the band gap energy of the samples was 5.15 eV. Photoluminescence spectrum showed that there were two strong emissions under ultraviolet light irradiation. The growth mechanism of indium hydroxide nanorods and the role of cetyltrimethyl ammonium bromide were also discussed.

  3. Composition-dependent photoluminescence properties of CuInS2/ZnS core/shell quantum dots

    NASA Astrophysics Data System (ADS)

    Hua, Jie; Du, Yuwei; Wei, Qi; Yuan, Xi; Wang, Jin; Zhao, Jialong; Li, Haibo

    2016-06-01

    CuInS2/ZnS (CIS/ZnS) core/shell quantum dots (QDs) with various Cu/In ratios were synthesized using the hot-injection method, and their photoluminescence (PL) properties were investigated by measuring steady-state and time-resolved PL spectroscopy. The emission peak of the CIS/ZnS QDs were tuned from 680 to 580 nm by decreasing the Cu/In precursor ratio from 1/1 to 1/9. As the Cu/In ratio decreases, the PL lifetimes and PL quantum yields (QYs) of CIS/ZnS core/shell QDs increased firstly and then decreased. Two dominant radiative recombination processes were postulated to analyze composition-dependent PL properties, including the recombination from a quantized conduction band to deep defects state and donor-acceptor pair (DAP) recombination. The decrease of PL efficiency resulted from high density defects and traps, which formed at the interface between CIS core and ZnS shell due to the large off-stoichiometry composition. The PL intensity and peak energy for CIS/ZnS core/shell QDs as a function of temperature were also provided. The thermal quenching further confirmed that the PL emission of CIS/ZnS QDs did not come from the recombination of excitons but from the recombination of many kinds of intrinsic defects inside the QDs as emission centers.

  4. Photochemical Reaction in Monolayer MoS2 via Correlated Photoluminescence, Raman Spectroscopy, and Atomic Force Microscopy.

    PubMed

    Oh, Hye Min; Han, Gang Hee; Kim, Hyun; Bae, Jung Jun; Jeong, Mun Seok; Lee, Young Hee

    2016-05-24

    Photoluminescence (PL) from monolayer MoS2 has been modulated using plasma treatment or thermal annealing. However, a systematic way of understanding the underlying PL modulation mechanism has not yet been achieved. By introducing PL and Raman spectroscopy, we analyze that the PL modulation by laser irradiation is associated with structural damage and associated oxygen adsorption on the sample in ambient conditions. Three distinct behaviors were observed according to the laser irradiation time: (i) slow photo-oxidation at the initial stage, where the physisorption of ambient gases gradually increases the PL intensity; (ii) fast photo-oxidation at a later stage, where chemisorption increases the PL intensity abruptly; and (iii) photoquenching, with complete reduction of PL intensity. The correlated confocal Raman spectroscopy confirms that no structural deformation is involved in slow photo-oxidation stage; however, the structural disorder is invoked during the fast photo-oxidation stage, and severe structural degradation is generated during the photoquenching stage. The effect of oxidation is further verified by repeating experiments in vacuum, where the PL intensity is simply degraded with laser irradiation in a vacuum due to a simple structural degradation without involving oxygen functional groups. The charge scattering by oxidation is further explained by the emergence/disappearance of neutral excitons and multiexcitons during each stage. PMID:27110722

  5. Emergence of new red-shifted carbon nanotube photoluminescence based on proximal doped-site design.

    PubMed

    Shiraki, Tomohiro; Shiraishi, Tomonari; Juhász, Gergely; Nakashima, Naotoshi

    2016-01-01

    Single-walled carbon nanotubes (SWNTs) show unique photoluminescence (PL) in the near-infrared (NIR) region. Here we propose a concept based on the proximal modification in local covalent functionalization of SWNTs. Quantum mechanical simulations reveal that the SWNT band gap changes specifically based on the proximal doped-site design. Thus, we synthesize newly-designed bisdiazonium molecules and conduct local fucntionalisation of SWNTs. Consequently, new red-shifted PL (E11(2*)) from the bisdiazonium-modified SWNTs with (6, 5) chirality is recognized around 1250 nm with over ~270 nm Stokes shift from the PL of the pristine SWNTs and the PL wavelengths are shifted depending on the methylene spacer lengths of the modifiers. The present study revealed that SWNT PL modulation is enable by close-proximity-local covalent modification, which is highly important for fundamental understanding of intrinsic SWNT PL properties as well as exciton engineering-based applications including photonic devices and (bio)imaging/sensing. PMID:27345862

  6. Changing interfaces: Photoluminescent ZnO nanoparticle powders in different aqueous environments

    NASA Astrophysics Data System (ADS)

    Kocsis, Krisztina; Niedermaier, Matthias; Bernardi, Johannes; Berger, Thomas; Diwald, Oliver

    2016-10-01

    We transformed vapor phase grown ZnO nanoparticle powders into aqueous ZnO nanoparticle dispersions and studied the impact of associated microstructure and interface property changes on their spectroscopic properties. With photoluminescence (PL) spectroscopy, we probed oxygen interstitials Oi2 - in the near surface region and tracked their specific PL emission response at hvEM = 2.1 eV during the controlled conversion of the solid-vacuum into the solid-liquid interface. While oxygen adsorption via the gas phase does affect the intensity of the PL emission bands, the O2 contact with ZnO nanoparticles across the solid-liquid interface does not. Moreover, we found that the near band edge emission feature at hvEM = 3.2 eV gains relative intensity with regard to the PL emission features in the visible light region. Searching for potential PL indicators that are specific to early stages of particle dissolution, we addressed for aqueous ZnO nanoparticle dispersions the effect of formic acid adsorption. In the absence of related spectroscopic features, we were able to consistently track ZnO nanoparticle dissolution and the concomitant formation of solvated Zinc formate species by means of PL and FT-IR spectroscopy, dynamic light scattering, and zeta potential measurements. For a more consistent and robust assessment of nanoparticle properties in different continuous phases, we discuss characterization challenges and potential pitfalls that arise upon replacing the solid-gas with the solid-liquid interface.

  7. Unique photoluminescence degradation/recovery phenomena in trivalent ion-activated phosphors

    SciTech Connect

    Sawada, Kenji; Adachi, Sadao

    2015-09-14

    Photo-induced luminescence intensity degradation in red-emitting Tb{sub 3}Ga{sub 5}O{sub 12}:Eu{sup 3+} (TGG:Eu{sup 3+}) phosphor is observed and studied using x-ray diffraction measurement, photoluminescence (PL) analysis, PL excitation spectroscopy, and PL decay analysis. The red-emitting TGG:Eu{sup 3+} phosphor exhibits remarkable degradation in the PL intensity under weak UV light (λ < 350 nm) exposure in the seconds time scale. The PL degradation characteristics can be well expressed by the exponential formulation with respect to exposure time. Interestingly, the PL intensity recovers after a few minutes when the phosphor is stored in a dark room or exposed to the long-wavelength (λ > 350 nm) light. The luminescence decay dynamics measured by excitation at λ{sub ex} = 355 and 266 nm suggest that the present degradation/recovery processes are caused by the electron traps formed in the TGG:Eu{sup 3+} phosphor. The Tb{sup 3+} emission in TGG shows the essentially same degradation characteristics as those observed in the TGG:Eu{sup 3+} phosphor. The present luminescence degradation/recovery phenomena of the trivalent ions (4f → 4f transitions) may universally occur in various oxide phosphors such as TGG (Tb{sup 3+} emission) and CaTiO{sub 3}:Eu{sup 3+}.

  8. Visible Photoluminescence of Non-Stoichiometric Silicon Nitride Films: The Effect of Annealing Temperature and Atmosphere

    NASA Astrophysics Data System (ADS)

    Vlasukova, L. A.; Komarov, F. F.; Parkhomenko, I. N.; Milchanin, O. V.; Makhavikou, M. A.; Mudryi, A. V.; Żuk, J.; Kopychiński, P.; Togambayeva, A. K.

    2015-07-01

    The radiative properties of non-stoichiometric silicon nitride SiNx fi lms produced by plasma-enhanced chemical vapor deposition were studied. Intense room-temperature photoluminescence (PL) in the visible region was recorded after annealing for both Si-rich (x = 1.13) and N-rich (x = 1.5) silicon nitride fi lms. The position of the PL band maximum depended signifi cantly on the fi lm composition. The PL band maxima for Si-rich and N-rich SiNx fi lms were detected in the red (660 nm) and blue (450 nm) spectral regions, respectively. The effect of the annealing atmosphere on PL of the SiNx fi lms was studied. It was shown that the PL intensity depended not only on the annealing temperature but also on the annealing atmosphere. The observed features of the non-stoichiometric SiNx PL spectra were explained in terms of defect states in the SiNx band gap.

  9. A Label-Free Photoluminescence Genosensor Using Nanostructured Magnesium Oxide for Cholera Detection

    PubMed Central

    Patel, Manoj Kumar; Ali, Md. Azahar; Krishnan, Sadagopan; Agrawal, Ved Varun; Al Kheraif, AbdulAziz A.; Fouad, H.; Ansari, Z.A.; Ansari, S. G.; Malhotra, Bansi D.

    2015-01-01

    Nanomaterial-based photoluminescence (PL) diagnostic devices offer fast and highly sensitive detection of pesticides, DNA, and toxic agents. Here we report a label-free PL genosensor for sensitive detection of Vibrio cholerae that is based on a DNA hybridization strategy utilizing nanostructured magnesium oxide (nMgO; size >30 nm) particles. The morphology and size of the synthesized nMgO were determined by transmission electron microscopic (TEM) studies. The probe DNA (pDNA) was conjugated with nMgO and characterized by X-ray photoelectron and Fourier transform infrared spectroscopic techniques. The target complementary genomic DNA (cDNA) isolated from clinical samples of V. cholerae was subjected to DNA hybridization studies using the pDNA-nMgO complex and detection of the cDNA was accomplished by measuring changes in PL intensity. The PL peak intensity measured at 700 nm (red emission) increases with the increase in cDNA concentration. A linear range of response in the developed PL genosensor was observed from 100 to 500 ng/μL with a sensitivity of 1.306 emi/ng, detection limit of 3.133 ng/μL and a regression coefficient (R2) of 0.987. These results show that this ultrasensitive PL genosensor has the potential for applications in the clinical diagnosis of cholera. PMID:26611737

  10. Time-resolved photoluminescence characterization of oxygen-related defect centers in AlN

    NASA Astrophysics Data System (ADS)

    Genji, Kumihiro; Uchino, Takashi

    2016-07-01

    Time-resolved photoluminescence (PL) spectroscopy has been employed to investigate the emission characteristics of oxygen-related defects in AlN in the temperature region from 77 to 500 K. Two PL components with different decay constants are observed in the near-ultraviolet to visible regions. One is the PL component with decay time of <10 ns and its peak position shifts to longer wavelengths from ˜350 to ˜500 nm with increasing temperature up to 500 K. This PL component is attributed to the radiative relaxation of photoexcited electrons from the band-edge states to the ground state of the oxygen-related emission centers. In the time region from tens to hundreds of nanoseconds, the second PL component emerges in the wavelength region from 300 to 400 nm. The spectral shape and the decay profiles are hardly dependent on temperature. This temperature-independent PL component most likely results from the transfer of photoexcited electrons from the band-edge states to the localized excited state of the oxygen-related emission centers. These results provide a detailed insight into the radiative relaxation processes of the oxygen-related defect centers in AlN immediately after the photoexcitation process.

  11. Unique photoluminescence degradation/recovery phenomena in trivalent ion-activated phosphors

    NASA Astrophysics Data System (ADS)

    Sawada, Kenji; Adachi, Sadao

    2015-09-01

    Photo-induced luminescence intensity degradation in red-emitting Tb3Ga5O12:Eu3+ (TGG:Eu3+) phosphor is observed and studied using x-ray diffraction measurement, photoluminescence (PL) analysis, PL excitation spectroscopy, and PL decay analysis. The red-emitting TGG:Eu3+ phosphor exhibits remarkable degradation in the PL intensity under weak UV light (λ < 350 nm) exposure in the seconds time scale. The PL degradation characteristics can be well expressed by the exponential formulation with respect to exposure time. Interestingly, the PL intensity recovers after a few minutes when the phosphor is stored in a dark room or exposed to the long-wavelength (λ > 350 nm) light. The luminescence decay dynamics measured by excitation at λex = 355 and 266 nm suggest that the present degradation/recovery processes are caused by the electron traps formed in the TGG:Eu3+ phosphor. The Tb3+ emission in TGG shows the essentially same degradation characteristics as those observed in the TGG:Eu3+ phosphor. The present luminescence degradation/recovery phenomena of the trivalent ions (4f → 4f transitions) may universally occur in various oxide phosphors such as TGG (Tb3+ emission) and CaTiO3:Eu3+.

  12. Structure and photoluminescence properties of carbon nanotip-vertical graphene nanohybrids

    NASA Astrophysics Data System (ADS)

    Wang, B. B.; Zhu, K.; Ostrikov, K.; Shao, R. W.; Zheng, K.

    2016-01-01

    We report on the effective enhancement and tuning of photoluminescence (PL) by combining vertical graphene nanoflakes (VGs) and carbon nanotips (CNTPs). The VGs are grown on the vertical CNTPs by hot filament chemical vapor deposition in the methane environment, where the CNTPs are synthesized on silicon substrates by CH4-H2-N2 plasma-enhanced hot filament chemical vapor deposition. The results of field emission scanning electron microscopy, transmission electron microscopy, micro-Raman spectroscopy, and X-ray photoelectron spectroscopy indicate that the VGs can be grown on the CNTP and silicon substrate surfaces with the orientation perpendicular to the surfaces of CNTPs and silicon substrates. The PL properties of VG, CNTP, and CNTP-VG structures are studied using a 325 nm line of He-Cd laser as the excitation source. The PL results indicate that the PL of VGs is enhanced by the CNTPs due to the increasing density of PL emitters, while the PL properties of the nanohybrid system can be tuned. Furthermore, the potential applications of CNTP-VG structures in optoelectronic devices are analyzed. These results contribute to the design of functional graphene-based materials and the development of next-generation optoelectronic devices.

  13. Emergence of new red-shifted carbon nanotube photoluminescence based on proximal doped-site design

    NASA Astrophysics Data System (ADS)

    Shiraki, Tomohiro; Shiraishi, Tomonari; Juhász, Gergely; Nakashima, Naotoshi

    2016-06-01

    Single-walled carbon nanotubes (SWNTs) show unique photoluminescence (PL) in the near-infrared (NIR) region. Here we propose a concept based on the proximal modification in local covalent functionalization of SWNTs. Quantum mechanical simulations reveal that the SWNT band gap changes specifically based on the proximal doped-site design. Thus, we synthesize newly-designed bisdiazonium molecules and conduct local fucntionalisation of SWNTs. Consequently, new red-shifted PL (E112*) from the bisdiazonium-modified SWNTs with (6, 5) chirality is recognized around 1250 nm with over ~270 nm Stokes shift from the PL of the pristine SWNTs and the PL wavelengths are shifted depending on the methylene spacer lengths of the modifiers. The present study revealed that SWNT PL modulation is enable by close-proximity-local covalent modification, which is highly important for fundamental understanding of intrinsic SWNT PL properties as well as exciton engineering–based applications including photonic devices and (bio)imaging/sensing.

  14. Electrochemical control of photoluminescence in two-dimensional MoS(2) nanoflakes.

    PubMed

    Wang, Yichao; Ou, Jian Zhen; Balendhran, Sivacarendran; Chrimes, Adam F; Mortazavi, Majid; Yao, David D; Field, Matthew R; Latham, Kay; Bansal, Vipul; Friend, James R; Zhuiykov, Serge; Medhekar, Nikhil V; Strano, Michael S; Kalantar-Zadeh, Kourosh

    2013-11-26

    Two-dimensional (2D) transition metal dichalcogenide semiconductors offer unique electronic and optical properties, which are significantly different from their bulk counterparts. It is known that the electronic structure of 2D MoS2, which is the most popular member of the family, depends on the number of layers. Its electronic structure alters dramatically at near atomically thin morphologies, producing strong photoluminescence (PL). Developing processes for controlling the 2D MoS2 PL is essential to efficiently harness many of its optical capabilities. So far, it has been shown that this PL can be electrically or mechanically gated. Here, we introduce an electrochemical approach to actively control the PL of liquid-phase-exfoliated 2D MoS2 nanoflakes by manipulating the amount of intercalated ions including Li(+), Na(+), and K(+) into and out of the 2D crystal structure. These ions are selected as they are crucial components in many bioprocesses. We show that this controlled intercalation allows for large PL modulations. The introduced electrochemically controlled PL will find significant applications in future chemical and bio-optical sensors as well as optical modulators/switches. PMID:24148149

  15. Photoluminescence Blinking of Single-Crystal Methylammonium Lead Iodide Perovskite Nanorods Induced by Surface Traps

    PubMed Central

    2016-01-01

    Photoluminescence (PL) of organometal halide perovskite materials reflects the charge dynamics inside of the material and thus contains important information for understanding the electro-optical properties of the material. Interpretation of PL blinking of methylammonium lead iodide (MAPbI3) nanostructures observed on polycrystalline samples remains puzzling owing to their intrinsic disordered nature. Here, we report a novel method for the synthesis of high-quality single-crystal MAPbI3 nanorods and demonstrate a single-crystal study on MAPbI3 PL blinking. At low excitation power densities, two-state blinking was found on individual nanorods with dimensions of several hundred nanometers. A super-resolution localization study on the blinking of individual nanorods showed that single crystals of several hundred nanometers emit and blink as a whole, without showing changes in the localization center over the crystal. Moreover, both the blinking ON and OFF times showed power-law distributions, indicating trapping–detrapping processes. This is further supported by the PL decay times of the individual nanorods, which were found to correlate with the ON/OFF states. Furthermore, a strong environmental dependence of the nanorod PL blinking was revealed by comparing the measurements in vacuum, nitrogen, and air, implying that traps locate close to crystal surfaces. We explain our observations by proposing surface charge traps that are likely related to under-coordinated lead ions and methylammonium vacancies to result in the PL blinking observed here. PMID:27617323

  16. Emergence of new red-shifted carbon nanotube photoluminescence based on proximal doped-site design

    PubMed Central

    Shiraki, Tomohiro; Shiraishi, Tomonari; Juhász, Gergely; Nakashima, Naotoshi

    2016-01-01

    Single-walled carbon nanotubes (SWNTs) show unique photoluminescence (PL) in the near-infrared (NIR) region. Here we propose a concept based on the proximal modification in local covalent functionalization of SWNTs. Quantum mechanical simulations reveal that the SWNT band gap changes specifically based on the proximal doped-site design. Thus, we synthesize newly-designed bisdiazonium molecules and conduct local fucntionalisation of SWNTs. Consequently, new red-shifted PL (E112*) from the bisdiazonium-modified SWNTs with (6, 5) chirality is recognized around 1250 nm with over ~270 nm Stokes shift from the PL of the pristine SWNTs and the PL wavelengths are shifted depending on the methylene spacer lengths of the modifiers. The present study revealed that SWNT PL modulation is enable by close-proximity-local covalent modification, which is highly important for fundamental understanding of intrinsic SWNT PL properties as well as exciton engineering–based applications including photonic devices and (bio)imaging/sensing. PMID:27345862

  17. Photoluminescence of localized excitons in ZnCdO thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wu, T. Y.; Huang, Y. S.; Hu, S. Y.; Lee, Y. C.; Tiong, K. K.; Chang, C. C.; Shen, J. L.; Chou, W. C.

    2016-07-01

    We have investigated the luminescence characteristics of Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system. The temperature-dependent photoluminescence (PL) and excitation power-dependent PL spectra were measured to clarify the luminescence mechanisms of the Zn1-xCdxO thin films. The peak energy of the Zn1-xCdxO thin films with increasing the Cd concentration is observed as redshift and can be fitted by the quadratic function of alloy content. The broadened full-width at half-maximum (FWHM) estimated from the 15 K PL spectra as a function of Cd content shows a larger deviation between the experimental values and theoretical curve, which indicates that experimental FWHM values are affected not only by alloy compositional disorder but also by localized excitons occupying states in the tail of the density of states. The Urbach energy determined from an analysis of the lineshape of the low-energy side of the PL spectrum and the degree of localization effect estimated from the temperature-induced S-shaped PL peak position described an increasing mean exciton-localization effects in ZnCdO films with increasing the Cd content. In addition, the PL intensity and peak position as a function of excitation power are carried out to clarify the types of radiative recombination and the effects of localized exciton in the ZnCdO films with different Cd contents.

  18. A Label-Free Photoluminescence Genosensor Using Nanostructured Magnesium Oxide for Cholera Detection

    NASA Astrophysics Data System (ADS)

    Patel, Manoj Kumar; Ali, Md. Azahar; Krishnan, Sadagopan; Agrawal, Ved Varun; Al Kheraif, Abdulaziz A.; Fouad, H.; Ansari, Z. A.; Ansari, S. G.; Malhotra, Bansi D.

    2015-11-01

    Nanomaterial-based photoluminescence (PL) diagnostic devices offer fast and highly sensitive detection of pesticides, DNA, and toxic agents. Here we report a label-free PL genosensor for sensitive detection of Vibrio cholerae that is based on a DNA hybridization strategy utilizing nanostructured magnesium oxide (nMgO; size >30 nm) particles. The morphology and size of the synthesized nMgO were determined by transmission electron microscopic (TEM) studies. The probe DNA (pDNA) was conjugated with nMgO and characterized by X-ray photoelectron and Fourier transform infrared spectroscopic techniques. The target complementary genomic DNA (cDNA) isolated from clinical samples of V. cholerae was subjected to DNA hybridization studies using the pDNA-nMgO complex and detection of the cDNA was accomplished by measuring changes in PL intensity. The PL peak intensity measured at 700 nm (red emission) increases with the increase in cDNA concentration. A linear range of response in the developed PL genosensor was observed from 100 to 500 ng/μL with a sensitivity of 1.306 emi/ng, detection limit of 3.133 ng/μL and a regression coefficient (R2) of 0.987. These results show that this ultrasensitive PL genosensor has the potential for applications in the clinical diagnosis of cholera.

  19. Photoluminescence Spectroscopy of Mass-Selected Electrosprayed Ions Embedded in Cryogenic Rare-Gas Matrixes.

    PubMed

    Kern, Bastian; Greisch, Jean-François; Strelnikov, Dmitry; Weis, Patrick; Böttcher, Artur; Ruben, Mario; Schäfer, Bernhard; Schooss, Detlef; Kappes, Manfred M

    2015-12-01

    An apparatus is presented which combines nanoelectrospray ionization for isolation of large molecular ions from solution, mass-to-charge ratio selection in gas-phase, low-energy-ion-beam deposition into a (co-condensed) inert gas matrix and UV laser-induced visible-region photoluminescence (PL) of the matrix isolated ions. Performance is tested by depositing three different types of lanthanoid diketonate cations including also a dissociation product species not directly accessible by chemical synthesis. For these strongly photoluminescent ions, accumulation of some femto- to picomoles in a neon matrix (over a time scale of tens of minutes to several hours) is sufficient to obtain well-resolved dispersed emission spectra. We have ruled out contributions to these spectra due to charge neutralization or fragmentation during deposition by also acquiring photoluminescence spectra of the same ionic species in the gas phase. PMID:26553589

  20. Kinetics of PL quenching during single-walled carbon nanotube rebundling and diameter-dependent surfactant interactions.

    PubMed

    McDonald, Timothy J; Engtrakul, Chaiwat; Jones, Marcus; Rumbles, Garry; Heben, Michael J

    2006-12-21

    The kinetics of single-walled carbon nanotube rebundling have been investigated by photoluminescence (PL) spectroscopy. The rate of loss of PL intensity was measured for 12 different nanotubes in three common aqueous surfactants (sodium dodecyl sulfate, SDS; sodium dodecylbenzene sulfonate, SDBS; and sodium cholate, SC) as the surfactant suspensions were diluted to promote nanotube rebundling, quenching of semiconductor nanotube PL, and precipitation. The rate of PL decay was first-order in the concentration of isolated nanotubes, as expected if surfactant desorption is rate-limiting in the rebundling process. Temperature-dependent measurements permitted an Arrhenius analysis from which diameter-dependent activation energies were determined. SDS was found to have very strong diameter dependence for activation energy, with stronger binding to smaller-diameter nanotubes, whereas SDBS displayed a weaker diameter dependence. SC was found to bind strongly to certain nanotubes and weakly to the (10,2) nanotube. The PL emission red shifted with time after dilution as surfactant desorption proceeded. This effect is attributed to an increase in the micropolarity at the nanotube surface. PMID:17165980

  1. Tuning photoluminescence and surface properties of carbon nanodots for chemical sensing

    NASA Astrophysics Data System (ADS)

    Zhang, Zhaomin; Pan, Yi; Fang, Yaning; Zhang, Lulu; Chen, Junying; Yi, Changqing

    2015-12-01

    Obtaining tunable photoluminescence (PL) with improved emission properties is crucial for successfully implementing fluorescent carbon nanodots (fCDs) in all practical applications such as multicolour imaging and multiplexed detection by a single excitation wavelength. In this study, we report a facile hydrothermal approach to adjust the PL peaks of fCDs from blue, green to orange by controlling the surface passivation reaction during the synthesis. This is achieved by tuning the passivating reagents in a step-by-step manner. The as-prepared fCDs with narrow size distribution show improved PL properties with different emission wavelengths. Detailed characterization of fCDs using elemental analysis, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy suggested that the surface chemical composition results in this tunable PL emission. Surface passivation significantly alters the surface status, resulting in fCDs with either stronger surface oxidation or N element doping that ultimately determine their PL properties. Further experiments suggested that the as-prepared orange luminescent fCDs (O-fCDs) were sensitive and specific nanosensing platforms towards Fe3+ determination in a complex biological environment, emphasizing their potential practical applications in clinical and biological fields.Obtaining tunable photoluminescence (PL) with improved emission properties is crucial for successfully implementing fluorescent carbon nanodots (fCDs) in all practical applications such as multicolour imaging and multiplexed detection by a single excitation wavelength. In this study, we report a facile hydrothermal approach to adjust the PL peaks of fCDs from blue, green to orange by controlling the surface passivation reaction during the synthesis. This is achieved by tuning the passivating reagents in a step-by-step manner. The as-prepared fCDs with narrow size distribution show improved PL properties with different emission wavelengths. Detailed

  2. The effect of SiO2 on TiO2 up-conversion photoluminescence film

    NASA Astrophysics Data System (ADS)

    Meng, Xiaoqi; Li, Lianqiang; Zou, Kaishun; Liu, Juncheng

    2014-11-01

    In order to increase the photoelectric conversion efficiency of silicon solar cell, the up-conversion film has been tried to enhance the response of the solar cells to the infrared band. Yb3+, Er3+ co-doped SiO2/TiO2 composite films with different Ti/Si molar ratio were deposited on the glass substrate with sol-gel method and spin-coating technique. The effect of different molar ratio of Ti/Si on the film's morphology and optical properties was investigated. The morphology, the absorption spectra and photoluminescence (PL) spectra of the film were tested and analyzed. After the film was annealed at 900 °C, the XRD diffraction pattern indicated that rare earths ions have evenly dispersed into the matrix lattice. The FT-IR showed that Si ions entered into the lattice of titanium dioxide, and the Ti-O-Si bonds came into being. When the film pumped with a laser of 980 nm, there were a dominant red emission and several weak green peaks. In addition, with the increase of the mole ratio of Si/Ti, the intensity of the film's up-conversion luminescence increases at first and then decreases. When the molar ratio of Si/Ti is 1/8, the sample had the highest intensity of up-conversion luminescence.

  3. Quality Characterization of Silicon Bricks using Photoluminescence Imaging and Photoconductive Decay: Preprint

    SciTech Connect

    Johnston, S.; Yan, F.; Zaunbrecher, K.; Al-Jassim, M.; Sidelkheir, O.; Ounadjela, K.

    2012-06-01

    Imaging techniques can be applied to multicrystalline silicon solar cells throughout the production process, which includes as early as when the bricks are cut from the cast ingot. Photoluminescence (PL) imaging of the band-to-band radiative recombination is used to characterize silicon quality and defects regions within the brick. PL images of the brick surfaces are compared to minority-carrier lifetimes measured by resonant-coupled photoconductive decay (RCPCD). Photoluminescence images on silicon bricks can be correlated to lifetime measured by photoconductive decay and could be used for high-resolution characterization of material before wafers are cut. The RCPCD technique has shown the longest lifetimes of any of the lifetime measurement techniques we have applied to the bricks. RCPCD benefits from the low-frequency and long-excitation wavelengths used. In addition, RCPCD is a transient technique that directly monitors the decay rate of photoconductivity and does not rely on models or calculations for lifetime. The measured lifetimes over brick surfaces have shown strong correlations to the PL image intensities; therefore, this correlation could then be used to transform the PL image into a high-resolution lifetime map.

  4. Photoluminescence based H2 and O2 gas sensing by ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Yadav, Kavita; Gahlaut, Shashank K.; Mehta, B. R.; Singh, J. P.

    2016-02-01

    Gas sensing properties of ZnO nanowires prepared via thermal chemical vapor deposition method were investigated by analyzing change in their photoluminescence (PL) spectra. The as-synthesized nanowires show two different PL peaks positioned at 380 nm and 520 nm. The 380 nm emission is ascribed to near band edge emission, and the green peak (520 nm) appears due to the oxygen vacancy defects. The intensity of the green PL signal enhances upon hydrogen gas exposure, whereas it gets quenched upon oxygen gas loading. The ZnO nanowires' sensing response values were observed as about 54% for H2 gas and 9% for O2 gas at room temperature for 50 sccm H2/O2 gas flow rate. The sensor response was also analyzed as a function of sample temperature ranging from 300 K to 400 K. A conclusion was derived from the observations that the H2/O2 gases affect the adsorbed oxygen species on the surface of ZnO nanowires. The adsorbed species result in the band bending and hence changes the depletion region which causes variation in PL signal. A photoluminescence based gas sensing technique has advantage over a conductometric technique due to its higher sensitivity and faster response time.

  5. Modifying the Photoluminescence of Monolayer MoS2 by Metal Deposition

    NASA Astrophysics Data System (ADS)

    Sun, Dezheng; You, Yumeng; Mak, Kin Fai; Zhang, Fan; Hone, James; Bartels, Ludwig; Heinz, Tony

    2013-03-01

    Monolayer MoS2 exhibits strong photoluminescence (PL) due to its direct band gap located at K point. Because of its monolayer thickness, light emission from MoS2 is known to be strongly influenced by interactions with surrounding media. In this study, we have investigated the effect on the photoluminescence of exfoliated monolayers of MoS2 induced by the deposition of gold atoms. The PL from the sample was recorded as a function of amount of gold deposited, up to an effective thickness of about 1 nm. Atomic force microscopy revealed that the gold forms isolated island structures on the surface. A progressive increase in quenching was seen with increasing gold coverage. Deposition of gold on suspended MoS2 samples led to quenching of the PL by more than a factor of 100. Given the low reactivity of gold, we attribute the PL quenching primarily to energy transfer of the photogenerated excitons to the metal clusters. The observed changes in the shape and intensity of emission spectra will be discussed in terms of this mechanism and possible effects of doping induced by the gold deposition.

  6. Revealing Defect-State Photoluminescence in Monolayer WS2 by Cryogenic Laser Processing.

    PubMed

    He, Zhengyu; Wang, Xiaochen; Xu, Wenshuo; Zhou, Yingqiu; Sheng, Yuewen; Rong, Youmin; Smith, Jason M; Warner, Jamie H

    2016-06-28

    Understanding the stability of monolayer transition metal dichalcogenides in atmospheric conditions has important consequences for their handling, life-span, and utilization in applications. We show that cryogenic photoluminescence spectroscopy (PL) is a highly sensitive technique to the detection of oxidation induced degradation of monolayer tungsten disulfide (WS2) caused by exposure to ambient conditions. Although long-term exposure to atmospheric conditions causes massive degradation from oxidation that is optically visible, short-term exposure produces no obvious changes to the PL or Raman spectra measured at either room temperature or even cryogenic environment. Laser processing was employed to remove the surface adsorbents, which enables the defect states to be detected via cryogenic PL spectroscopy. Thermal cycling to room temperature and back down to 77 K shows the process is reversible. We also monitor the degradation process of WS2 using this method, which shows that the defect related peak can be observed after one month aging in ambient conditions. PMID:27295362

  7. Light-emitting device with organic electroluminescent material and photoluminescent materials

    DOEpatents

    McNulty, Thomas Francis; Duggal, Anil Raj; Turner, Larry Gene; Shiang, Joseph John

    2005-06-07

    A light-emitting device comprises a light-emitting member, which comprises two electrodes and an organic electroluminescent material disposed between the electrodes, and at least one organic photoluminescent ("PL") material. The light-emitting member emits light having a first spectrum in response to a voltage applied across the two electrodes. The organic PL material absorbs a portion of the light emitted by the light-emitting member and emits light having second spectrum different than the first spectrum. The light-emitting device can include an inorganic PL material that absorbs another portion of the light emitted from the light-emitting member and emits light having a third spectrum different than both the first and the second spectra.

  8. Temperature dependence of photoluminescence properties in a thermally activated delayed fluorescence emitter

    SciTech Connect

    Niwa, Akitsugu; Kobayashi, Takashi Nagase, Takashi; Naito, Hiroyoshi; Goushi, Kenichi; Adachi, Chihaya

    2014-05-26

    Using steady-state and time-resolved photoluminescence (PL) spectroscopy, we have investigated the temperature dependence of PL properties of 1,2,3,5-tetrakis(carbazol-9-yl)-4,6-dicyano-benzene (4CzIPN), which have a small energy gap between its singlet and triplet excited states and thus exhibits efficient thermally activated delayed fluorescence [H. Uoyama et al., Nature 492, 235 (2012)]. Below around 100 K, PL quantum efficiency of 4CzIPN thin films is largely suppressed and strong photoexcitation intensity dependence appears. These features can be explained by using rate equations for the densities of singlet and triplet excited states considering a triplet-triplet annihilation process.

  9. Photoluminescence of nanosized Zn2SiO4:Mn depending upon preparation method

    NASA Astrophysics Data System (ADS)

    Petrovykh, K. A.; Kortov, V. S.; Rempel, A. A.

    2014-11-01

    Nanosized Zn2SiO4:Mn powders were prepared by two different methods: a high- energy ball-milling of microcrystalline powder (so-called "top-down") and a sol-gel method ("bottom-up"). It was shown that it is possible to obtain particles of 30±10 nm by means of the ball-milling. A particle size of the Zn2SiO4:Mn synthesized by the sol-gel method ranged from 20 to 110 nm. It was found all samples exhibit photoluminescence (PL) in the green spectral region with a maximum emission wavelength from 515 to 520 nm. A nanopowder obtained by the ball-milling showed a significant decrease of the PL intensity comparing with bulk material. The PL intensity of the samples prepared by sol-gel method is much higher than that of ball-milled Zn2SiO4:Mn.

  10. Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence

    NASA Astrophysics Data System (ADS)

    Yang, Xinbo; Macdonald, D.; Fell, A.; Shalav, A.; Xu, Lujia; Walter, D.; Ratcliff, T.; Franklin, E.; Weber, K.; Elliman, R.

    2013-08-01

    We present an approach to characterize the relative saturation current density (Joe) and sheet resistance (RSH) of laser doped regions on silicon wafers based on rapid photoluminescence (PL) imaging. In the absence of surface passivation layers, the RSH of laser doped regions using a wide range of laser parameters is found to be inversely proportional to the PL intensity (IPL). We explain the underlying mechanism for this correlation, which reveals that, in principle, IPL is inversely proportional to Joe at any injection level. The validity of this relationship under a wide range of typical experimental conditions is confirmed by numerical simulations. This method allows the optimal laser parameters for achieving low RSH and Joe to be determined from a simple PL image.

  11. Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys

    SciTech Connect

    Nepal, N.; Zavada, J. M.; Lee, D. S.; Steckl, A. J.; Sedhain, A.; Lin, J. Y.; Jiang, H. X.

    2009-03-16

    The ultraviolet (UV) photoluminescence (PL) properties of Tm-doped Al{sub x}Ga{sub 1-x}N (0.39{<=}x{<=}1) alloys grown by solid-source molecular beam epitaxy were probed using above-bandgap excitation from a laser source at 197 nm. The PL spectra show dominant UV emissions at 298 and 358 nm only for samples with x=1 and 0.81. Temperature dependence of the PL intensities of these emission lines reveals exciton binding energies of 150 and 57 meV, respectively. The quenching of these UV emissions appears related to the thermal activation of the excitons bound to rare-earth structured isovalent (RESI) charge traps, which transfer excitonic energy to Tm{sup 3+} ions resulting in the UV emissions. A model of the RESI trap levels in AlGaN alloys is presented.

  12. Photoluminescence study of β-Ga2O3 nanostructures annealed in different environments

    NASA Astrophysics Data System (ADS)

    Jangir, R.; Porwal, S.; Tiwari, Pragya; Mondal, Puspen; Rai, S. K.; Ganguli, Tapas; Oak, S. M.; Deb, S. K.

    2012-08-01

    β-Ga2O3 nanostructures (nanowires, nanoribbons, and nanosheets) were synthesized via vapor transport method on gold coated silicon substrate in N2 ambient and these β-Ga2O3 nanostructures grown on silicon substrates were taken as the starting material to study the effect of annealing in the different environments (oxygen, water vapour, and ammonia solution) on the structural front and photoluminescence (PL) properties. The PL spectra of β-Ga2O3 nanostructures exhibit a UV-blue emission band whose intensity is strongly affected by the annealing in different environments. Annealing modifies the surface of the nanostructures by creating surface states which quench the PL by creating competitive nonradiative paths. This study also indicates the dominance of the formation of water induced surface states over ammonia induced surface states. The irreversible nature of these defects significantly affects the applicability of this system in moist high temperature environments.

  13. Photoluminescence efficiency of BGaN epitaxial layers with high boron content

    NASA Astrophysics Data System (ADS)

    Jurkevičius, J.; Mickevičius, J.; Kadys, A.; Kolenda, M.; Tamulaitis, G.

    2016-07-01

    High-boron-content epitaxial layers of BGaN intended for lattice-matching with AlGaN in UV light emitters were grown on SiC substrate and GaN and AlN templates on sapphire. Photoluminescence (PL) of these layers was studied under quasi-steady-state conditions by varying temperature and excitation intensity. The PL spectra in the samples with different boron content and their dynamics evidence formation of boron-rich regions occupying a small fraction of the total layer volume and acting as the emission killers. The room-temperature PL efficiency of the BGaN epilayers was estimated and shown to drastically decrease at increasing boron content with no significant correlation with either the type of substrate/template or technological conditions of the layer deposition.

  14. Photoluminescence studies of type-II CdSe/CdTe superlattices

    SciTech Connect

    Li Jingjing; Johnson, Shane R.; Wang Shumin; Ding Ding; Ning Cunzheng; Zhang Yonghang; Yin Leijun; Skromme, B. J.; Liu Xinyu; Furdyna, Jacek K.

    2012-08-06

    CdSe/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. The relatively long carrier lifetime of 188 ns observed in time-resolved PL measurements shows good material quality. The steady-state PL peak position exhibits a blue shift with increasing excess carrier concentration. Self-consistent solutions of the Schroedinger and Poisson equations show that this effect can be explained by band bending as a result of the spatial separation of electrons and holes, which is critical confirmation of a strong type-II band edge alignment between CdSe and CdTe.

  15. Three-dimensional optical memory using photoluminescence change in Sm-doped sodium borate glass

    SciTech Connect

    Lim, Jinhyong; Lee, Myeongkyu; Kim, Eunkyoung

    2005-05-09

    The feasibility of three-dimensional (3D) optical memory has been demonstrated by utilizing the photoluminescence (PL) spectrum change in a Sm-doped fluoride glass [K. Miura, J. Qiu, S. Fujiwara, S. Sakasuchi, and K. Hirao, Appl. Phys. Lett. 80 2263 (2002)]. We here report on a femtosecond laser-induced PL change in a Sm-doped sodium borate glass that is easier to synthesize and its potential application to 3D memory. Irradiation with a femtosecond pulsed laser (800 nm, 1 kHz, 100 fs) induced a PL peak near 682 nm, resulting from the photoreduction of the Sm ions. A multilayer pattern (bit size=1 {mu}m,layer separation=8 {mu}m) formed by femtosecond laser irradiation was read out by a reflection-type fluorescent confocal microscope, which detected the emission at 682 nm as a signal. High-contrast pattern images were obtained without crosstalk.

  16. Origin of tunable photoluminescence from graphene quantum dots synthesized via pulsed laser ablation.

    PubMed

    Santiago, S R M; Lin, T N; Yuan, C T; Shen, J L; Huang, H Y; Lin, C A J

    2016-08-10

    A one-step synthesis of graphene quantum dots (GQDs) has been implemented using pulsed laser ablation (PLA) with carboxyl-functionalized multiwalled carbon nanotubes (MWCNTs). The synthesized GQDs with an average size smaller than 3 nm were obtained by the fragmentation of MWCNTs via oxidative cutting. The GQDs can generate tunable photoluminescence (PL) ranging from green to blue by controlling the PLA time. The PL spectrum (decay time) of the green GQDs remains unchanged under different excitation energies (emission energies), while that of the blue GQDs correlates with the excitation energy (emission energy). On the basis of the pH and temperature dependence of PL, we suggest that the localized intrinsic states associated with the sp(2) nanodomains and delocalized extrinsic states embedded on the GQD surface are responsible for blue and green emission in GQDs, respectively. PMID:27476476

  17. Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal-Insulator Phase Transition in Active Substrates.

    PubMed

    Hou, Jiwei; Wang, Xi; Fu, Deyi; Ko, Changhyun; Chen, Yabin; Sun, Yufei; Lee, Sangwook; Wang, Kevin X; Dong, Kaichen; Sun, Yinghui; Tongay, Sefaattin; Jiao, Liying; Yao, Jie; Liu, Kai; Wu, Junqiao

    2016-08-01

    The atomic thickness and flatness allow properties of 2D semiconductors to be modulated with influence from the substrate. Reversible modulation of these properties requires an "active," reconfigurable substrate, i.e., a substrate with switchable functionalities that interacts strongly with the 2D overlayer. In this work, the photoluminescence (PL) of monolayer molybdenum disulfide (MoS2 ) is modulated by interfacing it with a phase transition material, vanadium dioxide (VO2 ). The MoS2 PL intensity is enhanced by a factor of up to three when the underlying VO2 undergoes the thermally driven phase transition from the insulating to metallic phase. A nonvolatile, reversible way to rewrite the PL pattern is also demonstrated. The enhancement effect is attributed to constructive optical interference when the VO2 turns metallic. This modulation method requires no chemical or mechanical processes, potentially finding applications in new switches and sensors. PMID:27335137

  18. Effect of thermal treatment and ageing on IR transmission and visible photoluminescence of nanostructured aluminum oxyhydroxide

    NASA Astrophysics Data System (ADS)

    Karlash, A. Yu; Skryshevsky, V. A.; Khodan, A. N.; Kanaev, A. V.; Gayvoronsky, V. Ya

    2012-09-01

    IR transmission and visible photoluminescence (PL) were studied in raw nanoporous aluminum oxyhydroxide (NOA) and in samples after thermal treatment at different temperatures. Structural and chemical modifications of the NOA sample were related to the water content and adsorption/desorption process at the surface. The differences observed in the FTIR spectra in vacuum and after ageing of the samples can be explained by the effects of molecular water and OH- groups on the stability of the low-temperature phases of NOA. A considerable increase in PL intensity and spectrum expansion to longer wavelengths were observed in all NOA samples after water desorption. This was accompanied by strong changes in the PL decay kinetics. Quenching of the fast luminescent decay and low-energy transitions in aged samples were observed after ageing of the samples. Partial passivation of the NOA surface and defective sites under ambient conditions is discussed.

  19. Two beam photoluminescence of PbS quantum dots in polyvinyl alcohol

    NASA Astrophysics Data System (ADS)

    Babu Pendyala, Naresh; Koteswara Rao, K. S. R.

    2010-11-01

    We report the effect of dual beam excitation on the photoluminescence (PL) from PbS quantum dots in polyvinyl alcohol by using two excitation lasers, namely Ar + (514.5 nm) and He-Ne laser (670 nm). Both sources of excitation gave similar PL spectra around 1.67 eV (related to shallow traps) and 1.1 eV (related to deep traps). When both lasers were used at the same time, we found that the PL induced by each of the lasers was partly quenched by the illumination of the other laser. The proposed mechanism of this quenching effect involves traps that are populated by one specific laser excitation, being photo-ionized by the presence of the other laser. Temperature, laser intensity and modulation frequency dependent quenching efficiencies are presented in this paper. This reversible modulation has potential for optical switching and memory device applications.

  20. Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature

    PubMed Central

    2012-01-01

    Four-bilayer Ge quantum dots (QDs) with Si spacers were grown on Si(001) substrates by ultrahigh vacuum chemical vapor deposition. In three samples, all Ge QDs were grown at 520 °C, while Si spacers were grown at various temperatures (520 °C, 550 °C, and 580 °C). Enhancement and redshift of room temperature photoluminescence (PL) were observed from the samples in which Si spacers were grown at a higher temperature. The enhancement of PL is explained by higher effective electrons capturing in the larger size Ge QDs. Quantum confinement of the Ge QDs is responsible for the redshift of PL spectra. The Ge QDs’ size and content were investigated by atomic force microscopy and Raman scattering measurements. PMID:22784702

  1. Temperature dependence of photoluminescence properties in a thermally activated delayed fluorescence emitter

    NASA Astrophysics Data System (ADS)

    Niwa, Akitsugu; Kobayashi, Takashi; Nagase, Takashi; Goushi, Kenichi; Adachi, Chihaya; Naito, Hiroyoshi

    2014-05-01

    Using steady-state and time-resolved photoluminescence (PL) spectroscopy, we have investigated the temperature dependence of PL properties of 1,2,3,5-tetrakis(carbazol-9-yl)-4,6-dicyano-benzene (4CzIPN), which have a small energy gap between its singlet and triplet excited states and thus exhibits efficient thermally activated delayed fluorescence [H. Uoyama et al., Nature 492, 235 (2012)]. Below around 100 K, PL quantum efficiency of 4CzIPN thin films is largely suppressed and strong photoexcitation intensity dependence appears. These features can be explained by using rate equations for the densities of singlet and triplet excited states considering a triplet-triplet annihilation process.

  2. Simulation of J-aggregate microcavity photoluminescence

    NASA Astrophysics Data System (ADS)

    Michetti, Paolo; La Rocca, Giuseppe C.

    2008-05-01

    We have developed a model in order to account for the photoexcitation dynamics of J-aggregate films and strongly coupled J-aggregate microcavities. The J aggregates are described as a disordered Frenkel exciton system in which relaxation occurs due to the presence of a thermal bath of molecular vibrations. The correspondence between the photophysics in J-aggregate films and that in J-aggregate microcavities is obtained by introducing a model polariton wave function mixing cavity photon modes and J-aggregate super-radiant excitons. With the same description of the material properties, we have calculated both absorption and luminescence spectra for the J-aggregate film and the photoluminescence of strongly coupled organic microcavities. The model is able to account for the fast relaxation dynamics in organic microcavities following nonresonant pumping and explains the temperature dependence of the ratio between the upper polariton and the lower polariton luminescence.

  3. Systematic safety evaluation on photoluminescent carbon dots

    PubMed Central

    2013-01-01

    Photoluminescent carbon dots (C-dots) were prepared using the improved nitric acid oxidation method. The C-dots were characterized by tapping-mode atomic force microscopy, and UV–vis absorption spectroscopy. The C-dots were subjected to systematic safety evaluation via acute toxicity, subacute toxicity, and genotoxicity experiments (including mouse bone marrow micronuclear test and Salmonella typhimurium mutagenicity test). The results showed that the C-dots were successfully prepared with good stability, high dispersibility, and water solubility. At all studied C-dot dosages, no significant toxic effect, i.e., no abnormality or lesion, was observed in the organs of the animals. Therefore, the C-dots are non-toxic to mice under any dose and have potential use in fluorescence imaging in vivo, tumor cell tracking, and others. PMID:23497260

  4. Systematic safety evaluation on photoluminescent carbon dots

    NASA Astrophysics Data System (ADS)

    Wang, Kan; Gao, Zhongcai; Gao, Guo; Wo, Yan; Wang, Yuxia; Shen, Guangxia; Cui, Daxiang

    2013-03-01

    Photoluminescent carbon dots (C-dots) were prepared using the improved nitric acid oxidation method. The C-dots were characterized by tapping-mode atomic force microscopy, and UV-vis absorption spectroscopy. The C-dots were subjected to systematic safety evaluation via acute toxicity, subacute toxicity, and genotoxicity experiments (including mouse bone marrow micronuclear test and Salmonella typhimurium mutagenicity test). The results showed that the C-dots were successfully prepared with good stability, high dispersibility, and water solubility. At all studied C-dot dosages, no significant toxic effect, i.e., no abnormality or lesion, was observed in the organs of the animals. Therefore, the C-dots are non-toxic to mice under any dose and have potential use in fluorescence imaging in vivo, tumor cell tracking, and others.

  5. Nucleation and growth of surfactant-passivated CdS and HgS nanoparticles: Time-dependent absorption and luminescence profiles.

    PubMed

    Mehta, S K; Kumar, Sanjay; Chaudhary, Savita; Bhasin, K K

    2010-01-01

    In this study, we have monitored the formation of CdS and HgS nanoparticles (NPs) using a precipitation method in the presence of surface-active agents. Three surfactants were tested to analyze the dependence of various parameters such as size, growth rate, photoluminescence (PL) emission and polydispersity of NPs on surfactant structure. Optical absorption spectroscopy was mainly used to estimate the optical bandgap and the size of NPs. The surfactant-induced quenching of PL intensity was found to be consistent with the different tendencies of the surfactants to act as Lewis acids towards these surfaces. The time-evolution of the absorbance suggested that the nucleation and growth rates markedly vary in a first-order fashion w.r.t. Cd(2+) and Hg(2+) salt concentration in excess of sulfide ions. The differences in the stabilization ability of the surfactants are discussed in reference to their structure-dependent adsorption behavior onto the particles. The comparative aspects of the different properties of CdS and HgS NPs prepared with identical methodology are presented in terms of metal cation-surfactant interactions. Changes in UV-vis and PL spectra during nucleation and growth of NPs were used to establish the possible mechanisms for the adsorption of surfactant molecules on the particle surface to restrict the unlimited growth. PMID:20648377

  6. Energy Transfer from Quantum Dots to Graphene and MoS2: The Role of Absorption and Screening in Two-Dimensional Materials.

    PubMed

    Raja, Archana; Montoya Castillo, Andrés; Zultak, Johanna; Zhang, Xiao-Xiao; Ye, Ziliang; Roquelet, Cyrielle; Chenet, Daniel A; van der Zande, Arend M; Huang, Pinshane; Jockusch, Steffen; Hone, James; Reichman, David R; Brus, Louis E; Heinz, Tony F

    2016-04-13

    We report efficient nonradiative energy transfer (NRET) from core-shell, semiconducting quantum dots to adjacent two-dimensional sheets of graphene and MoS2 of single- and few-layer thickness. We observe quenching of the photoluminescence (PL) from individual quantum dots and enhanced PL decay rates in time-resolved PL, corresponding to energy transfer rates of 1-10 ns(-1). Our measurements reveal contrasting trends in the NRET rate from the quantum dot to the van der Waals material as a function of thickness. The rate increases significantly with increasing layer thickness of graphene, but decreases with increasing thickness of MoS2 layers. A classical electromagnetic theory accounts for both the trends and absolute rates observed for the NRET. The countervailing trends arise from the competition between screening and absorption of the electric field of the quantum dot dipole inside the acceptor layers. We extend our analysis to predict the type of NRET behavior for the near-field coupling of a chromophore to a range of semiconducting and metallic thin film materials. PMID:26928675

  7. Thermoluminescence and photoluminescence studies on γ-ray-irradiated Ce³⁺,Tb³⁺-doped potassium chloride single crystals.

    PubMed

    Bangaru, S; Saradha, K; Muralidharan, G

    2016-05-01

    Single crystals of KCl doped with Ce(3+),Tb(3+) were grown using the Bridgeman-Stockbarger technique. Thermoluminescence (TL), optical absorption, photoluminescence (PL), photo-stimulated luminescence (PSL), and thermal-stimulated luminescence (TSL) properties were studied after γ-ray irradiation at room temperature. The glow curve of the γ-ray-irradiated crystal exhibits three peaks at 420, 470 and 525 K. F-Light bleaching (560 nm) leads to a drastic change in the TL glow curve. The optical absorption measurements indicate that F- and V-centres are formed in the crystal during γ-ray irradiation. It was attempted to incorporate a broad band of cerium activator into the narrow band of terbium in the KCl host without a reduction in the emission intensity. Cerium co-doped KCl:Tb crystals showed broad band emission due to the d-f transition of cerium and a reduction in the intensity of the emission peak due to (5)D3 -(7)F(j) (j = 3, 4) transition of terbium, when excited at 330 nm. These results support that energy transfer occurs from cerium to terbium in the KCl host. Co-doping Ce(3+) ions greatly intensified the excitation peak at 339 nm for the emission at 400 nm of Tb(3+). The emission due to Tb(3+) ions was confirmed by PSL and TSL spectra. PMID:26381612

  8. Mo-O bond doping and related-defect assisted enhancement of photoluminescence in monolayer MoS{sub 2}

    SciTech Connect

    Wei, Xiaoxu; Yu, Zhihao; Cheng, Ying; Yu, Linwei; Wang, Junzhuan Wang, Xinran; Shi, Yi; Hu, Fengrui; Wang, Xiaoyong; Xiao, Min

    2014-12-15

    In this work, we report a strong photoluminescence (PL) enhancement of monolayer MoS{sub 2} under different treatments. We find that by simple ambient annealing treatment in the range of 200 °C to 400 °C, the PL emission can be greatly enhanced by a factor up to two orders of magnitude. This enhancement can be attributed to two factors: first, the formation of Mo-O bonds during ambient exposure introduces an effective p-doping in the MoS{sub 2} layer; second, localized electrons formed around Mo-O bonds related defective sites where the electrons can be effectively localized with higher binding energy resulting in efficient radiative excitons recombination. Time resolved PL decay measurement showed that longer lifetime of the treated sample consistent with the higher quantum efficiency in PL. These results give more insights to understand the luminescence properties of the MoS{sub 2}.

  9. The photoluminescence and structural properties of (Ce, Yb) co-doped silicon oxides after high temperature annealing

    SciTech Connect

    Heng, C. L. Li, J. T.; Su, W. Y.; Yin, P. G.; Finstad, T. G.

    2015-01-28

    We studied the photoluminescence (PL) and structural properties of Ce and Yb co-doped silicon oxide films after high temperature annealing. The PL spectra of Ce{sup 3+} and Yb{sup 3+} ions were sensitive to the structural variation of the films, and the Yb PL intensities were significantly enhanced especially upon 1200 °C annealing. X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy, indicated that rare earth silicates and the CeO{sub 2} phase had formed in the oxides. The proportions of the phases varied with the “nominal Si-richness” of the films. Energy transfer from the excited Ce{sup 3+} to Yb{sup 3+} can be inferred from both PL excitation and decay spectra.

  10. Distinct photoluminescence and Raman spectroscopy signatures for identifying highly crystalline WS2 monolayers produced by different growth methods

    DOE PAGESBeta

    McCreary, Amber; Berkdemir, Ayse; Wang, Junjie; Nguyen, Minh An; Elías, Ana Laura; Perea-López, Néstor; Fujisawa, Kazunori; Kabius, Bernd; Carozo, Victor; Cullen, David A.; et al

    2016-03-08

    We report that transition metal dichalcogenides (TMDs) such as WS2 show exciting promise in electronic and optoelectronic applications. Significant variations in the transport, Raman, and photoluminescence (PL) can be found in the literature, yet it is rarely addressed why this is. In this report, Raman and PL of monolayered WS2 produced via different methods are studied and distinct features that indicate the degree of crystallinity of the material are observed. While the intensity of the LA(M) Raman mode is found to be a useful indicator to assess the crystallinity, PL is drastically more sensitive to the quality of the materialmore » than Raman spectroscopy. We also show that even exfoliated crystals, which are usually regarded as the most pristine material, can contain large amounts of defects that would not be apparent without Raman and PL measurements. Ultimately, these findings can be applied to the understanding of other two-dimensional heterostructured systems.« less

  11. Strain effect of cellulose-wrapped single-walled carbon nanotubes measured by photoluminescence and Raman scattering spectroscopy

    NASA Astrophysics Data System (ADS)

    Ito, Masahiro; Yajima, Hirofumi; Homma, Yoshikazu

    2016-07-01

    The photoluminescence (PL) of single-walled carbon nanotubes (SWNTs) can be obtained even under the dry condition when SWNTs are dispersed in biochemical polymers. We fabricated transparent films composed of SWNTs and a large amount of carboxymethyl cellulose (CMC), and evaluated the effects of CMC wrapping on PL properties. The PL peaks from the transparent CMC–SWNT film showed SWNT-type-dependent peak shifts, indicating that SWNTs were under uniaxial compression strain in the CMC film. Raman scattering spectra also suggested uniaxial compression strain. The rate of strain was estimated to be 0.3–0.4% by PL and Raman scattering spectroscopies. Furthermore, the release of strain was demonstrated by stretching the CMC film.

  12. Photoluminescence studies of polycrystalline Cu(In,Ga)Se{sub 2}: Lateral inhomogeneities beyond Abbe's diffraction limit

    SciTech Connect

    Neumann, Oliver; Brüggemann, Rudolf Bauer, Gottfried H.; Hariskos, Dimitrios; Witte, Wolfram

    2015-11-14

    We analyze Cu(In,Ga)Se{sub 2} absorbers with a scanning near-field optical microscope (SNOM) by photoluminescence (PL). Such measurements allow one to extract local fluctuations of the integral PL yield, the quasi-Fermi level splitting, and the material composition in the submicron range. However, the experimental findings depend strongly on the surface roughness of the absorber: If the surface is rough, artifact-prone correlations between surface contour and PL features measured by SNOM can be found that complicate the study of recombination effects. For smooth surfaces, such correlations no longer exist and the influence of grain boundaries on the integral PL yield and the quasi-Fermi level splitting is revealed. The method also allows a detailed determination of the local band gaps in neighboring grains and their spatial variation inside, and thus of possibly local changes in chemical composition of different grains.

  13. Electric Field Modulation of Semiconductor Quantum Dot Photoluminescence: Insights Into the Design of Robust Voltage-Sensitive Cellular Imaging Probes.

    PubMed

    Rowland, Clare E; Susumu, Kimihiro; Stewart, Michael H; Oh, Eunkeu; Mäkinen, Antti J; O'Shaughnessy, Thomas J; Kushto, Gary; Wolak, Mason A; Erickson, Jeffrey S; Efros, Alexander L; Huston, Alan L; Delehanty, James B

    2015-10-14

    The intrinsic properties of quantum dots (QDs) and the growing ability to interface them controllably with living cells has far-reaching potential applications in probing cellular processes such as membrane action potential. We demonstrate that an electric field typical of those found in neuronal membranes results in suppression of the QD photoluminescence (PL) and, for the first time, that QD PL is able to track the action potential profile of a firing neuron with millisecond time resolution. This effect is shown to be connected with electric-field-driven QD ionization and consequent QD PL quenching, in contradiction with conventional wisdom that suppression of the QD PL is attributable to the quantum confined Stark effect. PMID:26414396

  14. Carrier redistribution between different potential sites in semipolar (202{sup ¯}1) InGaN quantum wells studied by near-field photoluminescence

    SciTech Connect

    Marcinkevičius, S.; Gelžinytė, K.; Zhao, Y.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

    2014-09-15

    Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202{sup ¯}1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202{sup ¯}1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.

  15. Rapid thermal annealing and modulation-doping effects on InAs/GaAs quantum dots photoluminescence dependence on excitation power

    NASA Astrophysics Data System (ADS)

    Chaâbani, W.; Melliti, A.; Maaref, M. A.; Testelin, C.; Lemaître, A.

    2016-07-01

    The optical properties of p-doped and annealed InAs/GaAs quantum dots (QDs) was investigated by photoluminescence (PL) as a function of temperature and excitation power density (Pexc). At low-T, PL spectra of rapid thermal annealing (RTA) and p-modulation doped QDs show an energy blueshift and redshift, respectively. A superlinear dependence of integrated PL intensity on Pexc at high-T was found only for undoped QD. The superlinearity was suppressed by modulation-doping and RTA effects. A linear dependence of IPL at all temperatures and a decrease of the carrier-carrier Coulomb interaction at high-T was found after RTA.

  16. Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate

    SciTech Connect

    Liu, Ke; Ma, Wenquan Huang, Jianliang; Zhang, Yanhua; Cao, Yulian; Huang, Wenjun; Luo, Shuai; Yang, Tao

    2015-07-27

    We report on photoluminescence (PL) emission with long wavelength for quantum structure by the sub-monolayer (SML) growth technique on GaAs (001) substrate. It is found that the PL emission wavelength can be controlled by controlling the SML InAs deposition amount. At 12 K, the PL peak position of the grown samples changes from about 1.66 to 1.78 μm. At 120 K, the PL emission of a sample reaches 1.91 μm. The physical mechanism responsible for the measured long wavelength PL emission may be related to strong In segregation and intermixing effects occurred in the structure grown by SML growth technique.

  17. Absolute Photoluminescence Quantum Yields of IR-26 Dye, PbS, and PbSe Quantum Dots

    SciTech Connect

    Semonin, Octavi Escala; Johnson, Justin C; Luther, Joseph M; Midgett, Aaron G; Nozik, Arthur J; Beard, Matthew C

    2010-08-19

    In this study, we have directly measured the photoluminescence quantum yield (Φ{sub PL}) of IR-26 at a range of concentrations and the Φ{sub PL} of PbS and PbSe QDs for a range of sizes. We find that the Φ{sub PL} of IR-26 has a weak concentration dependence due to reabsorption, with a Φ{sub PL} of 0.048 ± 0.002% for low concentrations, lower than previous reports by a full order of magnitude. We also find that there is a dramatic size dependence for both PbS and PbSe QDs, with the smallest dots exhibiting a Φ{sub PL} in excess of 60%, while larger dots fall below 3%. A model, including nonradiative transition between electronic states and energy transfer to ligand vibrations, appears to explain this size dependence. These findings provide both a better characterization of photoluminescence for near-infrared emitters and some insight into how improved QDs can be developed.

  18. Evidence for adduct formation at the semiconductor-solution interface. Photoluminescent properties of cadmium selenide in the presence of lanthanide. beta. -diketonate complexes

    SciTech Connect

    Murphy, C.J.; Ellis, A.B. )

    1990-04-05

    Photoluminescence (PL) measurements of etched, single-crystal n-CdSe demonstrate that the semiconductor surface engages in adduct formation with a family of lanthanide {beta}-diketonate complexes, Ln(fod){sub 3} (Ln = lanthanide; fod = 6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionato anion), in isooctane ambient.

  19. Effect of vacuumization on the photoluminescence and photoresponse decay of the zinc oxide nanostructures grown by different methods

    NASA Astrophysics Data System (ADS)

    Kapustianyk, Volodymyr; Turko, Borys; Rudyk, Viktor; Rudyk, Yuriy; Rudko, Mykola; Panasiuk, Myron; Serkiz, Roman

    2016-06-01

    Influence of vacuumization on the photoluminescence (PL) spectra and photoresponse decay of ZnO nanostructures fabricated by different methods was investigated. The visible band of photoluminescence and ultraviolet (UV) photosensitivity of the samples grown from a vapor phase was associated with the intrinsic defects such as doubly charged zinc vacancies, and for the samples grown by hydrothermal method - with presence of the oxygen vacancies. The experimental results show that ZnO nanostructures grown from the vapor phase would be promising for producing of the low cost and effective UV detecting devices.

  20. Photoluminescence study of the effect of strain compensation on InAs/AlAsSb quantum dots

    NASA Astrophysics Data System (ADS)

    Zhao, Zhexin; Laghumavarapu, Ramesh B.; Simmonds, Paul J.; Ji, Haiming; Liang, Baolai; Huffaker, Diana L.

    2015-09-01

    We investigate stacked structures of InAs/AlAsSb/InP quantum dots using temperature- and power-dependent photoluminescence. The band gap of InAs/AlAsSb QDs is 0.73 eV at room temperature, which is close to the ideal case for intermediate band solar cells. As the number of quantum dot layers is increased, the photoluminescence undergoes a blue-shift due to the effects of accumulated compressive strain. This PL red shift can be counteracted using thin layers of AlAs to compensate the strain. We also derive thermal activation energies for this exotic quantum dot system.

  1. Chirality-Selective Photoluminescence Enhancement of ssDNA-Wrapped Single-Walled Carbon Nanotubes Modified with Gold Nanoparticles.

    PubMed

    Yang, Juan; Zhao, Qinghua; Lyu, Min; Zhang, Zhenyu; Wang, Xiao; Wang, Meng; Gao, Zhou; Li, Yan

    2016-06-01

    In this work, a convenient method to enhance the photoluminescence (PL) of single-walled carbon nanotubes (SWNTs) in aqueous solutions is provided. Dispersing by single-stranded DNA (ssDNA) and modifying with gold nanoparticles (AuNPs), about tenfold PL enhancement of the SWNTs is observed. More importantly, the selective PL enhancement is achieved for some particular chiralities of interest over all other chiralities, by using certain specific ssDNA sequences that are reported to recognize these particular chiralities. By forming AuNP-DNA-SWNT nanohybrids, ssDNA serves as superior molecular spacers that on one hand protect SWNT from direct contacting with AuNP and causing PL quench, and on the other hand attract the AuNP in close proximity to the SWNT to enhance its PL. This PL enhancement method can be utilized for the PL analysis of SWNTs in aqueous solutions, for biomedical imaging, and may serve as a prescreening method for the recognition and separation of single chirality SWNTs by ssDNA. PMID:27128378

  2. Improving stability of photoluminescence of ZnSe thin films grown by molecular beam epitaxy by incorporating Cl dopant

    NASA Astrophysics Data System (ADS)

    Wang, J. S.; Chen, W. J.; Yang, C. S.; Tsai, Y. H.; Wang, H. H.; Chen, R. H.; Shen, J. L.; Tsai, C. D.

    2011-01-01

    This investigation studies the effect of chlorine (Cl) dopant in ZnSe thin films that were grown by molecular beam epitaxy on their photoluminescence (PL) and the stability thereof. Free excitonic emission was observed at room-temperature in the Cl-doped sample. Photon irradiation with a wavelength of 404 nm and a power density of 9.1 W/cm2 has a much stronger effect on PL degradation than does thermal heating to a temperature of 150 °C. Additionally, this study shows that the generation of nonradiative centers by both photon irradiation and thermal heating can be greatly inhibited by incorporating Cl dopant.

  3. Influence of growth temperature on AlGaN multiquantum well point defect incorporation and photoluminescence efficiency

    NASA Astrophysics Data System (ADS)

    Armstrong, A.; Allerman, A. A.; Henry, T. A.; Crawford, M. H.

    2011-04-01

    The dependence of (Al)GaN/AlGaN multiquantum well (MQWs) optical efficiency and defect incorporation on the growth temperature (Tg) of the optically active region was investigated. Marked increase in MQW photoluminescence (PL) intensity was observed for increasing Tg. Correspondingly, increasing Tg also significantly reduced point defect incorporation under QW growth conditions, as determined by deep level optical spectroscopy. It is suggested that enhanced MQW PL with increasing Tg resulted from improved nonradiative lifetime through reduced nonradiative defect density in the MQW region.

  4. Analysis of oxyluciferin photoluminescence pathways in aqueous solutions.

    PubMed

    Hiyama, Miyabi; Mochizuki, Toshimitsu; Akiyama, Hidefumi; Koga, Nobuaki

    2015-01-01

    We evaluated the pK(a) values of oxyluciferin and its conjugate acids and bases theoretically with the help of experimental correction values, from which free energies for the first excited and the ground states of all the species were estimated. On the basis of these results, we calculated pH-dependent absorption spectra, where the relative absorption intensities of various species strongly depend on photoexcitation energy, and we further analyzed the photoluminescence pathways of oxyluciferin in aqueous solutions with various pH. In the case of 350 nm photoexcitation, in particular, experiments have shown that dominant emission color is green and it attenuates with pH decreasing, while blue (3 < pH < 8) and red (pH < 3) emissions appear. Our present results clarify the pathways of these photoluminescence depending on the pH values and thus should be useful in further analyses of photoluminescence pathways for other photoexcitation wavelength in comparison with experiments. PMID:25334091

  5. EPR and photoluminescence properties of Mn2+ doped CdS nanoparticles synthesized via co-precipitation method.

    PubMed

    Gupta, Atul K; Kripal, Ram

    2012-10-01

    The structural properties of Mn doped CdS (Mn:CdS) nanoparticles (NPs) are studied using X-ray diffraction (XRD), Transmission electron microscopy (TEM), Ultraviolet-visible (UV-vis), Photoluminescence (PL), Raman and Electron paramagnetic resonance (EPR) spectroscopy. XRD analysis shows the nanostructure with 2-4 nm of average crystallite size. The planes (110), (103) and (112) in XRD pattern distinguish the wurtzite structure of the Mn:CdS NPs. The intensity of the plane (102) increases as the doping concentration of Mn(2+) increases. UV-vis absorption spectra show blue shift as compared to bulk CdS. The optical band gap energy of Mn(2+) (0, 0.35, 0.70 and 1.35 at.%) doped CdS NPs corresponding to absorption edge are found to be 5.29, 5.28, 5.25 and 5.21 eV, respectively. The intensity of luminescence is changing with the concentration of Mn(2+) doped in CdS NPs. Raman spectra show blue shift in fundamental optical phonon mode (1LO) as well as second optical phonon mode (2LO) as compared to bulk CdS. The intensity ratio of the 2LO to 1LO modes slightly decreases as Mn(2+) concentration increases. EPR shows the existence of Mn(2+) with different local structures in CdS nanoparticles. The values of spectroscopic splitting factor (g) and hyperfine interaction constant (A) decrease as Mn(2+) concentration increases in CdS NPs. PMID:22868335

  6. Photoluminescence characteristics of polariton condensation in a CuBr microcavity

    SciTech Connect

    Nakayama, Masaaki Murakami, Katsuya; Furukawa, Yoshiaki; Kim, DaeGwi

    2014-07-14

    We have investigated the photoluminescence (PL) properties of a CuBr microcavity at 10 K, including the temporal profiles, from the viewpoint of cavity-polariton condensation. The excitation energy density dependence of the PL intensity (band width) of the lower polariton branch at an in-plane wave vector of k{sub //} = 0 exhibits a threshold-like increase (decrease). A large blueshift in the PL energy of ∼10 meV caused by the cavity-polariton renormalization is correlated with the excitation energy density dependence of the PL intensity. The estimated density of photogenerated electron-hole pairs at the threshold is two orders lower than the Mott transition density. These results consistently demonstrate the occurrence of cavity-polariton condensation. In addition, we found that the PL rise and decay times are shortened dramatically by the cavity-polariton condensation, which reflects the bosonic final state stimulation in the relaxation process and the intrinsic cavity-polariton lifetime in the decay process.

  7. Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots

    NASA Astrophysics Data System (ADS)

    Rothfuchs, Charlotte; Kukharchyk, Nadezhda; Koppe, Tristan; Semond, Fabrice; Blumenthal, Sarah; Becker, Hans-Werner; As, Donat J.; Hofsäss, Hans C.; Wieck, Andreas D.; Ludwig, Arne

    2016-09-01

    We report on ion implantation into GaN QDs and investigate their radiation hardness. The experimental study is carried out by photoluminescence (PL) measurements on molecular beam epitaxy-grown GaN quantum dots after ion implantation. Both quantum dots grown in the hexagonal (H) and the cubic (C) crystal structure were subjected to gallium ions with an energy of 400 kV (H) and 75 kV (C) with fluences ranging from 5 ×1010 cm-2 to 1 ×1014 cm-2 (H) and to 1 ×1015 cm-2 (C), respectively. Low-temperature PL measurements reveal a PL quenching for which a quantitative model as a function of the ion fluence is developed. A high degradation resistance is concluded. A non-radiative trap with one main activation energy is found for all QD structures by temperature-dependent PL measurements. Further analysis of fluence-dependent PL energy shifts shows ion-induced intermixing and strain effects. Particular for the hexagonal quantum dots, a strong influence of the quantum confined Stark effect is present.

  8. Studies of low temperature photoluminescence spectra and excitonic valley polarization in monolayer MoTe2

    NASA Astrophysics Data System (ADS)

    Koirala, Sandhaya; Mouri, Shinichiro; Miyauchi, Yuhei; Matsuda, Kazunari; Kyoto University Team

    Recently, atomically thin layered transition-metal dichalcogenide (TMDs) in the form MX2 (M = Mo, W, X = S, Se, Te) have attracted much interest from the viewpoints of their fundamental physics and potential applications. The characteristic optical features of semiconducting TMDs arise from excitons confined in their atomically thin layers. Molybdenum ditelluride MoTe2 has attracted emerging research interest because of optical gap energy (lowest exciton transition) of 1.09 eV, and large spin-orbit coupling of 250 meV. Temperature-dependent photoluminescence (PL) and polarization-resolved PL measurement were performed for mechanically exfoliated monolayer MoTe2 from 4.4 to 300 K. At a low temperature, the PL spectra from MoTe2 show two sharp peaks for excitons and charged excitons (trions). The systematic temperature-dependent PL measurements revel that the homogeneous linewidth of the exciton peak broadens linearly as the temperature increased due to exciton-acoustic-phonon interactions. From polarization-resolved PL measurements, the valley polarization of above 40 % in the exciton state has been observed at low temperatures. In this meeting, we will discuss about exciton dephasing and valley polarization in monolayer MoTe2.

  9. Synthesis and photoluminescence properties of Sm3+-doped YAl3(BO3)4 phosphor.

    PubMed

    Kumar, R Satheesh; Ponnusamya, V; Jose, M T

    2014-09-01

    A near ultraviolet excitable phosphor based on Sm3+-doped YAl3(BO3)4 has been synthesized by modified solid-state reaction at 1000°C. The phase purity and photoluminescence (PL) behavior of the phosphor are studied in detail using the powder X-ray diffraction technique and PL measurements. X-ray diffraction reveals that the phase purity of YAl3(BO3)4 critically depends upon the boric acid concentration. The phosphor has strong excitation at 406 nm in the near ultraviolet region (350–420 nm) and its emission peaks were monitored at 564, 599 and 643 nm. Further, detailed PL analysis demonstrates that the substitution of Sm3+ ions at sites of Y3+ and Al3+ ions enhances the PL efficiency of the phosphor appreciably. First, the PL efficiency of YAl3(BO3)4:Sm3+ was compared with commercial (Y,Gd)BO3:Eu3+ red phosphor. The Fourier transform infrared study provides essential information regarding the change in metal–oxygen bond vibrations of the phosphor. The morphology of the phosphor was investigated through scanning electron microscopy, which reveals that the phosphor possessed distorted spherical and rectangular shapes with average grain sizes in the range 0.5–1 μm. PMID:25337617

  10. Laser-induced Greenish-Blue Photoluminescence of Mesoporous Silicon Nanowires

    NASA Astrophysics Data System (ADS)

    Choi, Yan-Ru; Zheng, Minrui; Bai, Fan; Liu, Junjun; Tok, Eng-Soon; Huang, Zhifeng; Sow, Chorng-Haur

    2014-05-01

    Solid silicon nanowires and their luminescent properties have been widely studied, but lesser is known about the optical properties of mesoporous silicon nanowires (mp-SiNWs). In this work, we present a facile method to generate greenish-blue photoluminescence (GB-PL) by fast scanning a focused green laser beam (wavelength of 532 nm) on a close-packed array of mp-SiNWs to carry out photo-induced chemical modification. The threshold of laser power is 5 mW to excite the GB-PL, whose intensity increases with laser power in the range of 5-105 mW. The quenching of GB-PL comes to occur beyond 105 mW. The in-vacuum annealing effectively excites the GB-PL in the pristine mp-SiNWs and enhances the GB-PL of the laser-modified mp-SiNWs. A complex model of the laser-induced surface modification is proposed to account for the laser-power and post-annealing effect. Moreover, the fast scanning of focused laser beam enables us to locally tailor mp-SiNWs en route to a wide variety of micropatterns with different optical functionality, and we demonstrate the feasibility in the application of creating hidden images.

  11. Bilayer hybrid nanoimprinting method for fabricating embedded silver nanostructure arrays with enhanced photoluminescence

    NASA Astrophysics Data System (ADS)

    Choi, Jun-Hyuk; Sung, Sang-Keun; Kim, Chul-Hyun; Jung, Yeon-Ho; Jung, Joo-Yun; Jeong, Jun-Ho; Lee, Eung-Sug

    2014-01-01

    A bilayer hybrid nanoimprinting (NI) method was developed for fabricating embedded metal nanopatterns with greater processability and improved reliability for enhanced photoluminescence (PL) in optoelectronic devices. Bilayer hybrid NI consists of the following: (a) spin-coating ultraviolet (UV) and thermally curable NI resists in sequence, (b) high-pressure thermal NI and UV exposure while maintaining the stamp in a pressed position, and (c) silver (Ag) deposition and lift-off using a thermal NI resist on the upper surface to create embedded Ag nanoarrays. Reference samples with no Ag nanopatterns and with protruding Ag dot-shaped nanopatterns were also fabricated for comparison. The transmittance and PL of all samples were measured. All samples containing Ag nanopatterns exhibited improved PL compared with reference samples with no Ag. For all pattern sizes, the samples with the embedded Ag nanoarrays exhibited the highest PL; the relative PL enhancements compared with samples with Ag dot-shaped nanoarrays were 32.2%, 36.1%, and 62.7% for pattern sizes of 150, 200, and 265 nm, respectively.

  12. High Contrast In vitro and In vivo Photoluminescence Bioimaging Using Near Infrared to Near Infrared Up-Conversion in Tm3+ and Yb3+ Doped Fluoride Nanophosphors

    PubMed Central

    Nyk, Marcin; Kumar, Rajiv; Ohulchanskyy, Tymish Y.; Bergey, Earl J.; Prasad, Paras N.

    2012-01-01

    A new approach for photoluminescence imaging in vitro and in vivo has been shown, utilizing near infrared to near infrared (NIR-to-NIR) up-conversion in nanophosphors. This NIR-to-NIR up-conversion process provides deeper light penetration into biological specimen and results in high contrast optical imaging due to absence of an autofluorescence background and decreased light scattering. Aqueous dispersible fluoride (NaYF4) nanocrystals (20–30 nm size) co-doped with the rare earth ions, Tm3+ and Yb3+, were synthesized and characterized by TEM, XRD and photoluminescence (PL) spectroscopy. In vitro cellular uptake was shown by the PL microscopy visualizing the characteristic emission of Tm3+ at ~ 800 nm excited with 975 nm. No apparent cytotoxicity was observed. Subsequent animal imaging studies were performed using Balb-c mice injected intravenously with up-converting nanophosphors, demonstrating the high contrast PL imaging in vivo. PMID:18928324

  13. Competition between auger recombination and hot-carrier trapping in PL intensity fluctuations of type II nanocrystals.

    PubMed

    Mangum, Benjamin D; Wang, Feng; Dennis, Allison M; Gao, Yongqian; Ma, Xuedan; Hollingsworth, Jennifer A; Htoon, Han

    2014-07-23

    Performing time-tagged, time-correlated, single-photon-counting studies on individual colloidal nanocrystal quantum dots (NQDs), the evolution of photoluminescence (PL) intensity-fluctuation behaviors in near-infrared (NIR) emitting type II, InP/CdS core-shell NQDs is investigated as a function of shell thickness. It is observed that Auger recombination and hot-carrier trapping compete in defining the PL intensity-fluctuation behavior for NQDs with thin shells, whereas the role of hot-carrier trapping dominates for NQDs with thick shells. These studies further reveal the distinct ramifications of altering either the excitation fluence or repetition rate. Specifically, an increase in laser pump fluence results in the creation of additional hot-carrier traps. Alternately, higher repetition rates cause a saturation in hot-carrier traps, thus activating Auger-related PL fluctuations. Furthermore, it is shown that Auger recombination of negatively charged excitons is suppressed more strongly than that of positively charged excitons because of the asymmetry in the electron-hole confinement in type II NQDs. Thus, this study provides new understanding of how both NQD structure (shell thickness and carrier-separation characteristics) and excitation conditions can be used to tune the PL stability, with important implications for room-temperature single-photon generation. Specifically, the first non-blinking NQD capable of single-photon emission in the near-infrared spectral regime is described. PMID:24715631

  14. Photoluminescence and optical transmission of diffusion-pump oils.

    NASA Technical Reports Server (NTRS)

    Kroes, R. L.

    1973-01-01

    The photoluminescence and optical transmission of the four widely used diffusion-pump oils, DC-705, DC-704, Convalex-10, and Convoil-20, were measured. Each of the oils was found to be transparent throughout the visible region, showed some absorption in the near-UV region, and became very opaque below approximately 300 nm. Both Convalex-10 and Convoil-20 turned yellow after exposure to UV light. No such change was noted in DC-705 or DC-704. Photoluminescence was produced in each of the four oils when irradiated with UV light. Both DC-705 and DC-704 had a nearly identical luminescence spectra that peaked at 350 nm. The spectra of Convalex-10 and Convoil-20 were fairly complex, with several peaks in the visible region.

  15. HAC: Band Gap, Photoluminescence, and Optical/Near-Infrared Absorption

    NASA Technical Reports Server (NTRS)

    Witt, Adolf N.; Ryutov, Dimitri; Furton, Douglas G.

    1996-01-01

    We report results of laboratory measurements which illustrate the wide range of physical properties found among hydrogenated amorphous carbon (HAC) solids. Within this range, HAC can match quantitatively the astronomical phenomena ascribed to carbonaceous coatings on interstellar grains. We find the optical band gap of HAC to be well correlated with other physical properties of HAC of astronomical interest, and conclude that interstellar HAC must be fairly hydrogen-rich with a band gap of E(sub g) is approx. greater than 2.0 eV.

  16. Examination of electronic structure differences between CIGSSe and CZTSSe by photoluminescence study

    SciTech Connect

    Tai, Kong Fai; Huan, Cheng Hon Alfred; Gershon, Talia; Gunawan, Oki

    2015-06-21

    In this paper, we elaborate on the interpretation and use of photoluminescence (PL) measurements as they relate to the “donor/acceptor” and “electrostatic potential fluctuations” models for compensated semiconductors. Low-temperature (7 K) PL measurements were performed on high-efficiency Cu(In,Ga)(S,Se){sub 2} and two Cu{sub 2}ZnSn(S,Se){sub 4} solar cells with high- and low-S/(S + Se) ratio, all fabricated by a hydrazine solution-processing method. From excitation-dependent PL, the total defect density (which include radiative and non-radiative defects) within the band gap (E{sub g}) was estimated for each material and the consequent depth of the electrostatic potential fluctuation (γ) was calculated. The quasi-donor-acceptor pair (QDAP) density was estimated from the blue-shift magnitude of the QDAP PL peak position in power-dependent PL spectra. As a further verification, we show that the slope of the lifetime as a function of photon energies (dτ/dE) is consistent with our estimate for the magnitude of γ. Lastly, the energetic depth of the QDAP defects is examined by studying the spectral evolution of the PL as a function of temperature. The shallow defect levels in CIGSSe resulted in a significant blue-shift of the PL peak with temperature, whereas no obvious shift was observed for either CZTSSe sample, indicating an increase in the depth of the defects. Further improvement on Cu{sub 2}ZnSn(S,Se){sub 4} solar cell should focus on reducing the sub-E{sub g} defect density and avoiding the formation of deep defects.

  17. The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films

    NASA Astrophysics Data System (ADS)

    Zhang, Pengzhan; Chen, Kunji; Lin, Zewen; Dong, Hengping; Li, Wei; Xu, Jun; Huang, Xinfan

    2015-06-01

    Last year, we have reported that the internal quantum efficiency of photoluminescence (PL) from amorphous silicon oxynitride (a-SiNxOy) films has been achieved as high as 60%. The present work intensively investigated the mechanisms for tunable PL in the 2.05-2.95 eV range from our a-SiNx:O films, by using a combination of optical characterizations, X-ray photoelectron spectroscopy (XPS) and electron paramagnetic resonance (EPR) measurements. The results of XPS, EPR, and photoluminescence excited measurements indicated that the incorporation of oxygen atoms into silicon nitride (a-SiNx) networks not only reduced the band tail structure disorder (Urbach tail width EU) but also created N-Si-O (Nx) defect states in the band gap. We have discovered the distinctive PL characteristics from a-SiNx:O films with various NH3/SiH4 ratios. The PL peak energy (EPL) is independent of the excitation energy (Eexc) and the PL intensity (IPL) is regardless of the optical band gap (Eopt) but is proportional to the Nx defects concentration, both of which are completely different from the PL characteristics by band tail states recombination mechanism, in which the EPL is proportional to Eexc (when Eexc ≤ Eopt) and the IPL is dependent on the relative position of Eexc and Eopt. Based on the N-Si-O bonding configurations and the distinctive PL characteristics, the radiative recombination mechanism through the N-Si-O defect states has been proposed, by which the performance of stimulated emission may be realized in this kind of a-SiNx:O films.

  18. Photoluminescence in the Ca{sub x}Sr{sub 1-x}WO{sub 4} system at room temperature

    SciTech Connect

    Porto, S.L.; Longo, E.; Simoes, L.G.P.; Lima, S.J.G.; Ferreira, J.M.; Soledade, L.E.B.; Espinoza, J.W.M.; Cassia-Santos, M.R.; Maurera, M.A.M.A.; Paskocimas, C.A.; Santos, I.M.G. Souza, A.G.

    2008-08-15

    In this work, a study was undertaken about the structural and photoluminescent properties, at room temperature, of powder samples from the Ca{sub x}Sr{sub 1-x}WO{sub 4} (x=0-1.0) system, synthesized by a soft chemical method and heat treated between 400 and 700 deg. C. The material was characterized using Infrared, UV-vis and Raman spectroscopy and XRD. The most intense PL emission was obtained for the sample calcined at 600 deg. C, which is neither highly disordered (400-500 deg. C), nor completely ordered (700 deg. C). Corroborating the role of disorder in the PL phenomenon, the most intense PL response was not observed for pure CaWO{sub 4} or SrWO{sub 4}, but for Ca{sub 0.6}Sr{sub 0.4}WO{sub 4}. The PL emission spectra could be separated into two Gaussian curves. The lower wavelength peak is placed around 530 nm, and the higher wavelength peak at about 690 nm. Similar results were reported in the literature for both CaWO{sub 4} and SrWO{sub 4}. - Graphical abstract: The structural and room temperature photoluminescence of Ca{sub x}Sr{sub 1-x}WO4 synthesized by a soft chemical method was studied. The most intense PL emission was obtained for the sample calcined at 600 deg. C, that is neither highly disordered (400-500 deg. C), nor completely ordered (700 deg. C). Corroborating the role of disorder in the PL phenomenon, the most intense PL response was not observed for pure CaWO{sub 4} or SrWO{sub 4}, but for Ca{sub 0.6}Sr{sub 0.4}WO{sub 4}.

  19. Time-integrated photoluminescence and pump-probe reflection spectroscopy of Si doped InN thin films

    SciTech Connect

    Mohanta, Antaryami; Jang, Der-Jun Wang, Ming-Sung; Tu, L. W.

    2014-01-28

    Temperature and excitation power dependent time-integrated photoluminescence of Si doped InN thin films are investigated. Photoluminescence (PL) spectra at low temperatures are described by single emission peak ensued due to “free-to-bound” recombination; whereas PL spectra at higher temperatures above 150 K are characterized by both “band-to-band” and “free-to-bound” transition. Carrier dynamics of Si doped InN thin films is studied using pump-probe reflection spectroscopy at room temperature. The hot electron cooling process is well described by electron-electron scattering. The dependence of the hot electron cooling rate on total electron density shows sublinear to linear behavior with increase of background electron density. The variation of the carrier recombination lifetime with total electron density implicates the dominance of the defect-related nonradiative recombination channel over other recombination processes.

  20. The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films

    SciTech Connect

    Zhang, Pengzhan; Chen, Kunji Lin, Zewen; Li, Wei; Xu, Jun; Huang, Xinfan; Dong, Hengping

    2015-06-08

    Last year, we have reported that the internal quantum efficiency of photoluminescence (PL) from amorphous silicon oxynitride (a-SiN{sub x}O{sub y}) films has been achieved as high as 60%. The present work intensively investigated the mechanisms for tunable PL in the 2.05–2.95 eV range from our a-SiN{sub x}:O films, by using a combination of optical characterizations, X-ray photoelectron spectroscopy (XPS) and electron paramagnetic resonance (EPR) measurements. The results of XPS, EPR, and photoluminescence excited measurements indicated that the incorporation of oxygen atoms into silicon nitride (a-SiN{sub x}) networks not only reduced the band tail structure disorder (Urbach tail width E{sub U}) but also created N-Si-O (N{sub x}) defect states in the band gap. We have discovered the distinctive PL characteristics from a-SiN{sub x}:O films with various NH{sub 3/}SiH{sub 4} ratios. The PL peak energy (E{sub PL}) is independent of the excitation energy (E{sub exc}) and the PL intensity (I{sub PL}) is regardless of the optical band gap (E{sub opt}) but is proportional to the N{sub x} defects concentration, both of which are completely different from the PL characteristics by band tail states recombination mechanism, in which the E{sub PL} is proportional to E{sub exc} (when E{sub exc} ≤ E{sub opt}) and the I{sub PL} is dependent on the relative position of E{sub exc} and E{sub opt}. Based on the N-Si-O bonding configurations and the distinctive PL characteristics, the radiative recombination mechanism through the N-Si-O defect states has been proposed, by which the performance of stimulated emission may be realized in this kind of a-SiN{sub x}:O films.

  1. Enhanced photoluminescence from CdS with SiO2 nanopillar arrays

    PubMed Central

    Li, Wei; Wang, Shaolei; He, Sufeng; Wang, Jing; Guo, Yanyan; Guo, Yufeng

    2015-01-01

    In this paper, the enhanced photoluminescence from CdS thin film with SiO2 nanopillar array (NPA) was demonstrated. The CdS was prepared using chemical bath deposition in a solution bath containing CdSO4, SC(NH2)2, and NH4OH. The SiO2 NPA was fabricated by the nanosphere lithography (NSL) techniques. The nanopillar is about 50 nm in diameter, and the height is 150 nm. As a result, the sample with NPA shows an obvious improvement of photoluminescence (PL), compared with the one without NPA. In addition, we also observed that the PL intensity is increased ~5 times if the active layer is deposited on the nanopillar arrays and covered by a thin metal film of Al. It is noteworthy that the enhancement of photoluminescence could be attributed to the roughness of the surface, the 2D photonic band gap (PBG) effect and the surface plasmon resonance (SPR) effects. PMID:26077552

  2. Photoluminescence properties of rare earths (Eu{sup 3+}, Tb{sup 3+}, Dy{sup 3+} and Tm{sup 3+}) activated NaInW{sub 2}O{sub 8} wolframite host lattice

    SciTech Connect

    Asiri Naidu, S.; Boudin, S.; Varadaraju, U.V.; Raveau, B.

    2012-01-15

    The photoluminescence (PL) studies on NaIn{sub 1-x}RE{sub x}W{sub 2}O{sub 8}, with RE=Eu{sup 3+}, Tb{sup 3+}, Dy{sup 3+} and Tm{sup 3+} phases have shown that the relative contribution of the host lattice and of the intra-f-f emission of the activators to the PL varies with the nature of the rare earth cation. In the case of Dy{sup 3+} and Tm{sup 3+} activators, with yellow and blue emission, respectively, the energy transfer from host to the activator plays a major role. In contrast for Eu{sup 3+}, with intense red emission, the host absorption is less pronounced and the intra-f-f transitions of the Eu{sup 3+} ions play a major role, whereas for Tb{sup 3+} intra-f-f transitions are only observed, giving rise to green emission. - Graphical abstract: NaInW{sub 2}O{sub 8} double tungstate doped with Eu{sup 3+}, Dy{sup 3+}, Tb{sup 3+}and Tm{sup 3+} shows characteristic emission of intense red for Eu{sup 3+}, yellow for Dy{sup 3+}, green for Tb{sup 3+} and blue for Tm{sup 3+}. Highlights: Black-Right-Pointing-Pointer Characteristic emissions of rare earths (Eu{sup 3+}, Tb{sup 3+}, Dy{sup 3+} and Tm{sup 3+}) are observed NaInW{sub 2}O{sub 8} wolframite. Black-Right-Pointing-Pointer Energy transfer from host to the activators (Eu{sup 3+} Dy{sup 3+} Tm{sup 3+} is observed. Black-Right-Pointing-Pointer PL properties of rare earth ions depend on minor structural variations in the host lattice.

  3. Modulation of porphyrin photoluminescence by nanoscale spacers on silicon substrates

    NASA Astrophysics Data System (ADS)

    Fang, Y. C.; Zhang, Y.; Gao, H. Y.; Chen, L. G.; Gao, B.; He, W. Z.; Meng, Q. S.; Zhang, C.; Dong, Z. C.

    2013-11-01

    We investigate photoluminescence (PL) properties of quasi-monolayered tetraphenyl porphyrin (TPP) molecules on silicon substrates modulated by three different nanoscale spacers: native oxide layer (NOL), hydrogen (H)-passivated layer, and Ag nanoparticle (AgNP) thin film, respectively. In comparison with the PL intensity from the TPP molecules on the NOL-covered silicon, the fluorescence intensity from the molecules on the AgNP-covered surface was greatly enhanced while that for the H-passivated surface was found dramatically suppressed. Time-resolved fluorescence spectra indicated shortened lifetimes for TPP molecules in both cases, but the decay kinetics is believed to be different. The suppressed emission for the H-passivated sample was attributed to the weaker decoupling effect of the monolayer of hydrogen atoms as compared to the NOL, leading to increased nonradiative decay rate; whereas the enhanced fluorescence with shortened lifetime for the AgNP-covered sample is attributed not only to the resonant excitation by local surface plasmons, but also to the increased radiative decay rate originating from the emission enhancement in plasmonic "hot-spots".

  4. Temperature and polarization dependence of photoluminescence in monolayer tungsten diselenide

    NASA Astrophysics Data System (ADS)

    Huang, Jiani; Hoang, Thang; Mikkelsen, Maiken

    2015-03-01

    Two-dimensional transition metal dichalcogenides (TMDCs) have recently attracted considerable research interest, due to their wide direct band-gaps, strong spin-orbit couplings and inversion symmetry breaking when compared to graphene. These properties have rich physics and applications in electronics, optics and spintronics. Here, we experimentally study the evolution of photoluminescence (PL) from mechanically exfoliated monolayer tungsten diselenide (WSe2) from T = 10 K to room temperature. At T = 10 K , we observe a clear free exciton (X0) emission at 1.75 eV together with a charged trion emission at 1.72 eV, yielding a trion binding energy of 30 meV. Temperature dependent PL measurements show that both the free exciton and trion exist up to room temperature, as a result of the large exciton (~370 meV) and trion binding energies of WSe2, while other localized and defect-related emission peaks vanish above T = 65 K . Temperature dependent polarization of the exciton and trion emisisons reveal a combined effect of large exciton binding energy, anisotropic thermal expansion and exciton-phonon interaction. These findings may provide a new platform to explore the valley polarization and valley-spin coupling in monolayer TMDCs.

  5. Tuning photoluminescence of organic rubrene nanoparticles through a hydrothermal process

    PubMed Central

    2011-01-01

    Light-emitting 5,6,11,12-tetraphenylnaphthacene (rubrene) nanoparticles (NPs) prepared by a reprecipitation method were treated hydrothermally. The diameters of hydrothermally treated rubrene NPs were changed from 100 nm to 2 μm, depending on hydrothermal temperature. Photoluminescence (PL) characteristics of rubrene NPs varied with hydrothermal temperatures. Luminescence of pristine rubrene NPs was yellow-orange, and it changed to blue as the hydrothermal temperature increased to 180°C. The light-emitting color distribution of the NPs was confirmed using confocal laser spectrum microscope. As the hydrothermal temperature increased from 110°C to 160°C, the blue light emission at 464 to approximately 516 nm from filtered-down NPs was enhanced by H-type aggregation. Filtered-up rubrene NPs treated at 170°C and 180°C exhibited blue luminescence due to the decrease of intermolecular excimer densities with the rapid increase in size. Variations in PL of hydrothermally treated rubrene NPs resulted from different size distributions of the NPs. PMID:21711925

  6. Enhanced photoluminescence of porous silicon nanoparticles coated by bioresorbable polymers

    NASA Astrophysics Data System (ADS)

    Gongalsky, Maxim B.; Kharin, Alexander Yu; Osminkina, Liubov A.; Timoshenko, Victor Yu; Jeong, Jinyoung; Lee, Han; Chung, Bong Hyun

    2012-08-01

    A significant enhancement of the photoluminescence (PL) efficiency is observed for aqueous suspensions of porous silicon nanoparticles (PSiNPs) coated by bioresorbable polymers, i.e., polylactic-co-glycolic acid (PLGA) and polyvinyl alcohol (PVA). PSiNPs with average size about 100 nm prepared by mechanical grinding of electrochemically etched porous silicon were dispersed in water to prepare the stable suspension. The inner hydrophobic PLGA layer prevents the PSiNPs from the dissolution in water, while the outer PVA layer makes the PSiNPs hydrophilic. The PL quantum yield of PLGA/PVA-coated PSiNPs was found to increase by three times for 2 weeks of the storage in water. The observed effect is explained by taking into account both suppression of the dissolution of PSiNPs in water and a process of the passivation of nonradiative defects in PSiNPs. The obtained results are interesting in view of the potential applications of PSiNPs in bioimaging.

  7. Photoluminescence decay rate of silicon nanoparticles modified with gold nanoislands

    PubMed Central

    2014-01-01

    We investigated plasmon-assisted enhancement of emission from silicon nanoparticles (ncs-Si) embedded into porous SiO x matrix in the 500- to 820-nm wavelength range. In the presence in the near-surface region of gold nanoisland film, ncs-Si exhibited up to twofold luminescence enhancement at emission frequencies that correspond to the plasmon resonance frequency of Au nanoparticles. Enhancement of the photoluminescence (PL) intensity was attributed to coupling with the localized surface plasmons (LSPs) excited in Au nanoparticles and to increase in the radiative decay rate of ncs-Si. It has been shown that spontaneous emission decay rate of ncs-Si modified by thin Au film over the wide emission spectral range was accelerated. The emission decay rate distribution was determined by fitting the experimental decay curves to the stretched exponential model. The observed increase of the PL decay rate distribution width for the Au-coated nc-Si-SiO x sample in comparison with the uncoated one was explained by fluctuations in the surface-plasmon excitation rate. PACS 78. 67. Bf; 78.55.-m PMID:24708532

  8. Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying

    NASA Astrophysics Data System (ADS)

    Joo, Jinmyoung; Defforge, Thomas; Loni, Armando; Kim, Dokyoung; Li, Z. Y.; Sailor, Michael J.; Gautier, Gael; Canham, Leigh T.

    2016-04-01

    The effect of supercritical drying (SCD) on the preparation of porous silicon (pSi) powders has been investigated in terms of photoluminescence (PL) efficiency. Since the pSi contains closely spaced and possibly interconnected Si nanocrystals (<5 nm), pore collapse and morphological changes within the nanocrystalline structure after common drying processes can affect PL efficiency. We report the highly beneficial effects of using SCD for preparation of photoluminescent pSi powders. Significantly higher surface areas and pore volumes have been realized by utilizing SCD (with CO2 solvent) instead of air-drying. Correspondingly, the pSi powders better retain the porous structure and the nano-sized silicon grains, thus minimizing the formation of non-radiative defects during liquid evaporation (air drying). The SCD process also minimizes capillary-stress induced contact of neighboring nanocrystals, resulting in lower exciton migration levels within the network. A significant enhancement of the PL quantum yield (>32% at room temperature) has been achieved, prompting the need for further detailed studies to establish the dominant causes of such an improvement.

  9. Absorption-Emission study of Zn1-xAlxO nanostructures

    NASA Astrophysics Data System (ADS)

    Yogamalar, N. Rajeswari; Bose, A. Chandra

    2011-07-01

    One-dimensional aluminum doped ZnO (ZnO:Al) nanorod is achieved by the controlled addition of metal nitrate as precursors in the presence of long chain poly-ethylene glycol (PEG) at 160 °C for 20 h through hydrothermal method. The as-synthesized ZnO nanorods are single crystalline, exhibiting an oriented growth along (0001) direction. Comprehensive structural analyses using X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDX) indicate that the dopant Al atom occupies Zn sites in ZnO. XRD pattern of the Zn1-xAlxO sample shows the formation of wurtzite hexagonal phase however, when the dopant concentration exceeds 9 at.% impurity phase corresponding to Al2O3 appears. The dopant effects on lattice vibration and electronic transitions of the ZnO nanocrystals have been investigated by Fourier transform infrared spectroscopy (FT-IR), Ultraviolet visible spectroscopy (UV-vis) absorption and photoluminescence (PL) emission recorded at room temperature. The characteristic absorption peak of doped ZnO shifts toward higher wavelength side thus, exhibiting a red shift phenomenon with decrease in optical band gap. Near band edge (NBE) to defect emission ratio is increased with increase in dopant concentration, indicating the degradation in crystallnity and enhancement in oxygen vacancies.

  10. Synthesis and characterization of a new photoluminescent material tris (2-methyl-8-hydroxy quinoline) lanthanum La(mq)3

    NASA Astrophysics Data System (ADS)

    Kumar, Rahul; Bhargava, Parag

    2016-05-01

    A new photoluminescence material, tris (2-methyl-8-hydroxy quinoline) lanthanum has been synthesized and characterized by different techniques. The prepared material La(mq)3 was characterized for structural, thermal and photoluminescence analysis. Structural analysis of this material was done by fourier transformed infrared spectroscopy (FTIR) and mass spectroscopy. Thermal analysis of this material was done by thermal gravimetric analysis (TGA) shows the thermal stability up to 400°C. Absorption and emission spectra of the material was measured by UV-visible spectroscopy and photoluminescence spectroscopy. Solution of this material La(mq)3 in ethanol showed absorption peak at 385nm respectively which may be attributed due to (π - π*) transitions. The photoluminescence spectra of La(mq)3 in ethanol solution showed intense peak at 430 nm.

  11. An unambiguous identification of 2D electron gas features in the photoluminescence spectrum of AlGaN/GaN heterostructures

    NASA Astrophysics Data System (ADS)

    Jana, Dipankar; Sharma, T. K.

    2016-07-01

    A fast and non-destructive method for probing the true signatures of 2D electron gas (2DEG) states in AlGaN/GaN heterostructures is presented. Two broad features superimposed with interference oscillations are observed in the low temperature photoluminescence (PL) spectrum. The two features are identified as the ground and excited 2DEG states which are confirmed by comparing the PL spectra of as-grown and top barrier layer etched samples. Broad PL features disappear at a certain temperature along with the associated interference oscillations. Furthermore, the two broad PL features depicts specific temperature and excitation intensity dependencies which make them easily distinguishable from the bandedge excitonic or defect related PL features. The presence of strong interference oscillations associated with the 2DEG PL features is explained by considering the localized generation of PL signal at the AlGaN/GaN heterointerface. Finally, a large value of the polarization induced electric field of ~1.01 MV cm‑1 is reported from PL measurements for AlGaN/GaN HEMT structures. It became possible only when the true identification of 2DEG features was made possible by the proposed method.

  12. Temperature dependent photoluminescence from ZnO/MgZnO multiple quantum wells grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Misra, P.; Sharma, T. K.; Kukreja, L. M.

    2007-07-01

    We have studied temperature dependent photoluminescence (PL) from ZnO Multiple Quantum Wells (MQWs) of different well layer thicknesses in the range ˜1-4 nm grown on (0001) sapphire by a novel in-house developed buffer assisted pulsed laser deposition. At 10 K the PL peak shifted toward blue with decreasing well layer thickness and at constant well layer thickness the PL peak shifted towards red with increasing temperature. To the best of our knowledge we have observed for the first time an efficient room temperature (RT) PL emanating from such MQWs. The red shift of the PL peak with increasing temperature has been found to be due to the band gap shrinkage in accordance with the Varshni's empirical relation. The spectral linewidth was found to increase with increasing temperature due to the scattering of excitons with acoustic and optical phonons in different temperature regimes. Both at RT and at 10 K the PL peak shifted with respect to the well layer thickness in the range of ˜3.35-˜3.68 eV with decreasing thickness in agreement with the calculated values.

  13. Time-resolved analysis of the white photoluminescence from chemically synthesized SiCxOy thin films and nanowires

    NASA Astrophysics Data System (ADS)

    Tabassum, Natasha; Nikas, Vasileios; Ford, Brian; Huang, Mengbing; Kaloyeros, Alain E.; Gallis, Spyros

    2016-07-01

    The study reported herein presents results on the room-temperature photoluminescence (PL) dynamics of chemically synthesized SiCxOy≤1.6 (0.19 < x < 0.6) thin films and corresponding nanowire (NW) arrays. The PL decay transients of the SiCxOy films/NWs are characterized by fast luminescence decay lifetimes that span in the range of 350-950 ps, as determined from their deconvoluted PL decay spectra and their stretched-exponential recombination behavior. Complementary steady-state PL emission peak position studies for SiCxOy thin films with varying C content showed similar characteristics pertaining to the variation of their emission peak position with respect to the excitation photon energy. A nearly monotonic increase in the PL energy emission peak, before reaching an energy plateau, was observed with increasing excitation energy. This behavior suggests that band-tail states, related to C-Si/Si-O-C bonding, play a prominent role in the recombination of photo-generated carriers in SiCxOy. Furthermore, the PL lifetime behavior of the SiCxOy thin films and their NWs was analyzed with respect to their luminescence emission energy. An emission-energy-dependent lifetime was observed, as a result of the modulation of their band-tail states statistics with varying C content and with the reduced dimensionality of the NWs.

  14. Structural, photoconductivity and photoluminescence characterization of cadmium sulfide quantum dots prepared by a co-precipitation method

    NASA Astrophysics Data System (ADS)

    Mishra, Sheo K.; Srivastava, Rajneesh K.; Prakash, S. G.; Yadav, Raghvendra S.; Panday, A. C.

    2011-03-01

    In this paper, cadmium sulfide (CdS) quantum dots (QDs) are synthesized by a simple co-precipitation method. X-ray diffraction (XRD) confirmed the formation of a cubical zinc blend structure of CdS nanoparticles. Transmission Electron Microscopy (TEM) images revealed that the CdS QDs are of 2-5 nm in size. The UV-vis absorption spectra showed an absorption peak at 427 nm (˜2.90 eV) indicating a blue shift of 0.48 eV as compared to bulk CdS. We estimated the particle sizes with the help of X-ray diffraction (XRD) patterns (3.665 nm) and the shift of the band gap absorption in the UV-vis spectrum (4.276 nm), which is very close to the TEM micrograph result. The photoluminescence spectrum shows three major emission peaks centered at 453 nm (˜2.73 eV), 526 nm (˜2.35 eV) and 551 nm (˜2.24 eV) at room temperature, which may be attributed to excitonic transitions, donor-acceptor (D-A) pairs recombination and the sulphur interstitial defects (Is) present in the band gap. To study the photoconductivity, the field dependence of the photocurrent and the dark-current was assessed, as was the time-resolved rise and decay photocurrent spectrum and wavelength-dependence photocurrent spectrum assessment of the CdS QDs. The time-resolved rise and decay photocurrent spectra exhibited negative photoconductivity (NPC) behavior when the CdS QDs were illuminated with 490 nm light. Such anomalous NPC may be attributed to the light-induced desorption of water molecules. The wavelength-dependence of the photocurrent was found to be close to the absorption and PL spectrum. The photoconductivity properties of the CdS QDs were measured using a thick film of powder without any binder. These CdS QDs can find potential application in optoelectronic devices and photodetectors.

  15. Spectrally resolved modulated infrared radiometry of photothermal, photocarrier, and photoluminescence response of CdSe crystals: Determination of optical, thermal, and electronic transport parameters

    NASA Astrophysics Data System (ADS)

    Pawlak, M.; Chirtoc, M.; Horny, N.; Pelzl, J.

    2016-03-01

    Spectrally resolved modulated infrared radiometry (SR-MIRR) with super-band gap photoexcitation is introduced as a self-consistent method for semiconductor characterization (CdSe crystals grown under different conditions). Starting from a theoretical model combining the contributions of the photothermal (PT) and photocarrier (PC) signal components, an expression is derived for the thermal-to-plasma wave transition frequency ftc which is found to be wavelength-independent. The deviation of the PC component from the model at high frequency is quantitatively explained by a quasi-continuous distribution of carrier recombination lifetimes. The integral, broad frequency band (0.1 Hz-1 MHz) MIRR measurements simultaneously yielded the thermal diffusivity a, the effective IR optical absorption coefficient βeff, and the bulk carrier lifetime τc. Spectrally resolved frequency scans were conducted with interchangeable IR bandpass filters (2.2-11.3 μm) in front of the detector. The perfect spectral match of the PT and PC components is the direct experimental evidence of the key assumption in MIRR that de-exciting carriers are equivalent to blackbody (Planck) radiators. The exploitation of the β spectrum measured by MIRR allowed determining the background (equilibrium) free carrier concentration n0. At the shortest wavelength (3.3 μm), the photoluminescence (PL) component supersedes the PC one and has distinct features. The average sample temperature influences the PC component but not the PT one.

  16. A new inorganic-organic hybrid In2Se3(en) as hollow nanospheres: hydrothermal synthesis and near-infrared photoluminescence properties.

    PubMed

    Liu, Pei; Yu, Shuai; Fan, Weiqiang; Shi, Weidong

    2013-02-28

    A new inorganic-organic hybrid In(2)Se(3)(en) was synthesized as hollow nanospheres via a facile and controllable hydrothermal method in a system containing ethylenediamine (en) and hydrazine hydrate. These as-obtained hybrid hollow nanospheres with an average diameter of 200 nm were assembled by irregularly small-sized (ca. 20 nm) nanoparticles. These hollow nanospheres were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared (FTIR) spectroscopy and thermogravimetric analysis (TGA). The surface chemical composition of the In(2)Se(3)(en) hollow nanospheres were studied by X-ray photoelectron spectroscopy (XPS). The possible gas bubble-template growth mechanism is proposed to understand the formation of In(2)Se(3)(en) hollow nanospheres. Room-temperature UV-vis diffuse reflection spectra and photoluminescence (PL) spectra indicate that the as-obtained hybrid nanospheres possess a maximum absorption at 470 nm and single strong near-infrared emission peak centered at 1092 nm. The near-infrared luminescence endows the hybrid nanospheres with potential application in telecommunications, biolabeling and biomedical imaging, etc. PMID:23307063

  17. Photoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon

    NASA Astrophysics Data System (ADS)

    Giri, P. K.; Coffa, S.; Raineri, V.; Privitera, V.; Galvagno, G.; La Ferla, A.; Rimini, E.

    2001-04-01

    Low-temperature photoluminescence (PL) spectroscopy, in conjunction with transmission electron microscopy (TEM) and optical microscopy (OM) have been carried out to investigate the origin of radiative recombination from various extended defects that evolve during high-temperature processing of ion-implanted epitaxial silicon. From PL studies on N2-annealed samples, we provide spectroscopic evidence of precipitation of the implanted impurities well below the solid-solubility limit. This result is being supported by observations from secondary ion mass spectrometry and spreading resistance profiling of the implanted ions. Cross sectional TEM analyses on these samples reveal <111>-oriented precipitates located in a region containing a high dislocation density. Postimplantation annealing in oxygen ambient results in the formation of dislocations and oxidation-induced stacking faults (OISF). A systematic analysis of PL spectra on different-implanted and preannealed samples, in conjunction with TEM and OM analyses, reveals that the conventionally observed dislocation-related D1 and D2 lines in the PL spectrum is not a characteristic of the OISF, but of the dislocations only. It is shown that the OISF acts as a nonradiative channel for luminescence in silicon. Various other sources of nonradiative channels in silicon are also presented and the efficacy of photoluminescence technique in the characterization of process-induced defects in silicon is discussed.

  18. Chemically-modulated photoluminescence of graphene oxide for selective detection of neurotransmitter by "turn-on" response.

    PubMed

    Jeon, Su-Ji; Kwak, Seon-Yeong; Yim, DaBin; Ju, Jong-Min; Kim, Jong-Ho

    2014-08-01

    Designing artificial nanomaterials capable of selectively detecting targets without the use of expensive and fragile antibodies is of great interest in the applications of nanomedicine. Here, we show that the photoluminescence (PL) of graphene oxide (GO) was chemically modulated for the selective detection of a neurotransmitter without the use of antibodies. GO was functionalized with nitrotriacetic acid (NTA) on which four different metal ions were chelated (M-NTA-GO), which led to its different PL responses to neurotransmitters. In particular, the Cu-NTA-GO hybrid was able to selectively detect norepinephrine at nanomolar concentrations in a simple manner via its "turn-on" PL. Moreover, it was successfully applied to the selective detection of norepinephrine secreted from living PC-12 cells. PMID:25036980

  19. Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence

    SciTech Connect

    Wang, Peng; Pan, Wenwu; Wu, Xiaoyan; Wang, Kai; Yue, Li; Gong, Qian; Wang, Shumin

    2015-12-15

    InP{sub 1-x}Bi{sub x} epilayers with bismuth (Bi) concentration x= 1.0% were grown on InP by gas source molecular beam epitaxy (GS-MBE) at low temperature (LT). Bi incorporation decreased the intrinsic free electron concentration of low temperature grown InP indicated by hall analysis. It is concluded that deep level center was introduced by Bi. Influence of Si doping on the InP{sub 1-x}Bi{sub x} films Photoluminescence (PL) was investigated. N-type doping in the InP{sub 1-x}Bi{sub x} epilayers was found to be effective at PL enhancement. Blue shift of InPBi PL emission wavelength was observed as the Si doping concentration increasing. Two independent peaks were fitted and their temperature dependence behavior was observed to be distinct obviously. Two individual radiative recombination processes were expected to be involved.

  20. Tunable photoluminescence of self-assembled GeSi quantum dots by B{sup +} implantation and rapid thermal annealing

    SciTech Connect

    Chen, Yulu; Wu, Shan; Ma, Yinjie; Fan, Yongliang; Yang, Xinju; Zhong, Zhenyang; Jiang, Zuimin

    2014-06-21

    The layered GeSi quantum dots (QDs) are grown on (001) Si substrate by molecular beam epitaxy. The photoluminescence (PL) peak of the as-grown GeSi quantum dots has obvious blue shift and enhancement after processed by ion implantation and rapid thermal annealing. It is indicated that the blue shift is originated from the interdiffusion of Ge and Si at the interface between QDs and the surrounding matrix. The dependence of PL intensity on the excitation power shows that there are the nonradiative centers of shallow local energy levels from the point defects caused by the ion implantation, but not removed by the rapid thermal annealing. The tunable blue shift of the PL position from the 1300 nm to 1500 nm region may have significant application value in the optical communication.

  1. Impurity Studies of Cd(0.8)Zn(0.2)Te Crystals Using Photoluminescence and Glow Discharge Mass Spectroscopy

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Lehoczky, Sandor L.; Scripa, Rosalie N.

    2005-01-01

    Cd(1-x)Zn(x)Te semiconductor crystal is a highly promising material for room temperature x- and gamma-ray detector applications because of its high resistivity, long carrier lifetime, and relatively high hole and electron mobilities. This paper reports the investigation of the impurities in several Cd(1-x)Zn(x)Te (x = 0.20) crystals grown using the vertical Bridgman method under a Cd overpressure. The impurity concentrations were measured using glow discharge mass spectroscopy (GDMS). The energy states of the impurities were studied using photoluminescence (PL) spectroscopy at liquid helium temperature. The PL spectra showed a series of sharp high energy lines which are associated with free excitons and excitons bound to impurities as donors and acceptors in the crystals. The impurities also contributed to donor-acceptor pair recombination. The correlation between the GDMS and PL results will be reported.

  2. Quantitative characterization of modulation-doped strained quantum wells through line-shape analysis of room-temperature photoluminescence spectra

    NASA Astrophysics Data System (ADS)

    Brierley, Steven K.

    1993-08-01

    Room-temperature photoluminescence (PL) was presented as a nondestructive characterization method for modulation-doped strained quantum well epitaxial structures suited for pseudomorphic high electron mobility transistors (pHEMTs). Though the spectra showed broad peaks, in contrast to the sharp, well-defined peaks in low-temperature PL spectra, quantitative energy data was obtained through fitting a phenomenological line-shape model to the spectra. This model included the four transitions linking the first two electron subbands and the first two heavy-hole subbands, which can take credit for all of the peaks noted in pHEMT epitaxial configurations at realistic doping levels. The obtained results revealed that by using a simple line-shape model to the room-temperature PL spectrum of a pHEMT, a substantial amount of detailed structural and electronic data can be acquired regarding the quantum well.

  3. Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence

    NASA Astrophysics Data System (ADS)

    Wang, Peng; Pan, Wenwu; Wang, Kai; Wu, Xiaoyan; Yue, Li; Gong, Qian; Wang, Shumin

    2015-12-01

    InP1-xBix epilayers with bismuth (Bi) concentration x= 1.0% were grown on InP by gas source molecular beam epitaxy (GS-MBE) at low temperature (LT). Bi incorporation decreased the intrinsic free electron concentration of low temperature grown InP indicated by hall analysis. It is concluded that deep level center was introduced by Bi. Influence of Si doping on the InP1-xBix films Photoluminescence (PL) was investigated. N-type doping in the InP1-xBix epilayers was found to be effective at PL enhancement. Blue shift of InPBi PL emission wavelength was observed as the Si doping concentration increasing. Two independent peaks were fitted and their temperature dependence behavior was observed to be distinct obviously. Two individual radiative recombination processes were expected to be involved.

  4. Studies of Adsorbate Effects on the Photoluminescence of Cadmium Sulfide and Cadmium Selenide.

    NASA Astrophysics Data System (ADS)

    Zhang, Zhongju

    1993-01-01

    Chapter One. The electronic properties of semiconductors and their surface and photoluminescence properties are introduced. A short introduction to chemisorption and the Langmuir adsorption isotherm model is presented. The properties of II-VI semiconductors are briefly reviewed. Chapter Two. Adsorption from CH_2 Cl_2 solution of a family of ring-substituted, 7,7,8,8-tetracyanoquinodimethane (TCNQ) derivatives onto the surface of etched, single-crystal n-CdSe quenches the band gap photoluminescence (PL) intensity of the semiconductor. PL quenching increases with the electron-withdrawing ability of the ring substituent. The C_{60} and C_ {70} fullerenes can also be adsorbed from toluene solution onto the surfaces of n-CdS and n-CdSe, causing quenching of the PL intensity. Quantitatively, the magnitude of the PL quenching can be fit to a dead -layer model, permitting an estimate of maximum expansions in dead-layer thickness caused by adsorption of TCNQ derivatives and C_{60} onto the n -CdSe surface to reach ~1400 A and ~300 A, respectively. The PL intensity changes are concentration-dependent and give good fits to the Langmuir adsorption isotherm model, yielding equilibrium binding constants on the order of ~10 ^5 to 10^6 M^{-1} for TCNQ derivatives and fullerenes, among the largest reported to date. With etched samples, the opposing Cd-rich (0001)and Se-rich (000 1) faces of individual CdSe samples are distinguishable through their interaction with TCNQ and C_ {60}, with adsorption onto the former face resulting in a substantially larger PL change but an experimentally indistinguishable equilibrium binding constant. Possible binding schemes that could account for these effects are presented. Chapter Three. The carrier concentration of CdS crystals can be increased by annealing the crystal in the vapor of Cd metal. The effect of the carrier concentration of CdS on its adsorption properties has been explored with p-toluidine and C_{60} adsorbates. The PL study has

  5. Photoassisted photoluminescence fine-tuning of gold nanodots through free radical-mediated ligand-assembly

    NASA Astrophysics Data System (ADS)

    Tseng, Yu-Ting; Cherng, Rochelle; Harroun, Scott G.; Yuan, Zhiqin; Lin, Tai-Yuan; Wu, Chien-Wei; Chang, Huan-Tsung; Huang, Chih-Ching

    2016-05-01

    In this study, we have developed a simple photoassisted ligand assembly to fine-tune the photoluminescence (PL) of (11-mercaptoundecyl)-N,N,N-trimethylammonium bromide-capped gold nanodots (11-MUTAB-Au NDs). The 11-MUTAB-Au NDs (size: ca. 1.8 nm), obtained from the reaction of gold nanoparticles (ca. 3 nm) and 11-MUTAB, exhibited weak, near-infrared (NIR) PL at 700 nm with a quantum yield (QY) of 0.37% upon excitation at 365 nm. The PL QY of the Au NDs increased to 11.43% after reaction with 11-mercaptoundecanoic acid (11-MUA) for 30 min under ultraviolet (UV) light, which was accompanied by a PL wavelength shift to the green region (~520 nm). UV-light irradiation accelerates 11-MUA assembly on the 11-MUTABAu NDs (11-MUA/11-MUTAB-Au NDs) through a radical-mediated reaction. Furthermore, the PL wavelength of the 11-MUA/11-MUTAB-Au NDs can be switched to 640 nm via cysteamine under UV-light irradiation. We propose that the PL of the Au NDs with NIR and visible emissions was originally from the surface thiol-Au complexes and the Au core, respectively. These dramatically different optical properties of the Au NDs were due to variation in the surface ligands, as well as the densities and surface oxidant states of the surface Au atoms/ions. These effects can be controlled by assembling surface thiol ligands and accelerated by UV irradiation.In this study, we have developed a simple photoassisted ligand assembly to fine-tune the photoluminescence (PL) of (11-mercaptoundecyl)-N,N,N-trimethylammonium bromide-capped gold nanodots (11-MUTAB-Au NDs). The 11-MUTAB-Au NDs (size: ca. 1.8 nm), obtained from the reaction of gold nanoparticles (ca. 3 nm) and 11-MUTAB, exhibited weak, near-infrared (NIR) PL at 700 nm with a quantum yield (QY) of 0.37% upon excitation at 365 nm. The PL QY of the Au NDs increased to 11.43% after reaction with 11-mercaptoundecanoic acid (11-MUA) for 30 min under ultraviolet (UV) light, which was accompanied by a PL wavelength shift to the green region

  6. Functional Exploration of the Polysaccharide Lyase Family PL6

    PubMed Central

    Mathieu, Sophie; Henrissat, Bernard; Labre, Flavien; Skjåk-Bræk, Gudmund; Helbert, William

    2016-01-01

    Alginate, the main cell-wall polysaccharide of brown algae, is composed of two residues: mannuronic acid (M-residues) and, its C5-epimer, guluronic acid (G-residues). Alginate lyases define a class of enzymes that cleave the glycosidic bond of alginate by β-elimination. They are classified according to their ability to recognize the distribution of M- and G-residues and are named M-, G- or MG-lyases. In the CAZy database, alginate lyases have been grouped by sequence similarity into seven distinct polysaccharide lyase families. The polysaccharide lyase family PL6 is subdivided into three subfamilies. Subfamily PL6_1 includes three biochemically characterized enzymes (two alginate lyases and one dermatan sulfatase lyase). No characterized enzymes have been described in the two other subfamilies (PL6_2 and PL6_3). To improve the prediction of polysaccharide-lyase activity in the PL6 family, we re-examined the classification of the PL6 family and biochemically characterized a set of enzymes reflecting the diversity of the protein sequences. Our results show that subfamily PL6_1 includes two dermatan sulfates lyases and several alginate lyases that have various substrate specificities and modes of action. In contrast, subfamilies PL6_2 and PL6_3 were found to contain only endo-poly-MG-lyases. PMID:27438604

  7. Origin of photoluminescence from silicon nanowires prepared by metal induced etching (MIE)

    SciTech Connect

    Saxena, Shailendra K. Rai, Hari. M.; Late, Ravikiran; Sagdeo, Pankaj R.; Kumar, Rajesh

    2015-05-15

    In this present study the origin of luminescence from silicon nanowires (SiNws) has been studied. SiNWs are fabricated on Si substrate by metal induced chemical etching (MIE). Here it is found that the band gap of SiNWs is higher than the gap of luminescent states in SiNWs which leads to the effect of Si=O bond. The band gap is estimated from diffuse reflectance analysis. Here we observe that band gap can be tailored depending on size (quantum confinement) but photoluminescence (PL) from all the sample is found to be fixed at 1.91 eV. This study is important for the understanding of origin of photoluminescence.

  8. Improved photoluminescence property of CTAB assisted polyaniline-AlZnO nanocomposite

    NASA Astrophysics Data System (ADS)

    Mitra, Mousumi; Kargupta, Kajari; Ganguly, Saibal; Banerjee, Dipali

    2015-06-01

    Polyaniline-Al doped ZnO ((PANI-AlZnO:: 70:30) nanocomposite was prepared via in situ chemical oxidative polymerization, while the hexagonal powder of AlZnO was synthesized via sol-gel technique, using Hexadecyltrimethylammonium bromide (CTAB) as a capping agent. The prepared nanocomposite was characterized by High resolution transmission electron microscopy (HRTEM), EDAX, X-ray diffraction (XRD) and Fourier transforms infrared (FTIR) spectra. The optical property of the nanomaterials is examined by photoluminescence (PL) spectra analysis. The XRD pattern confirms the formation of Al doped ZnO as well as PANI. The HRTEM images of the composite showed the formation of hexagonal AlZnO embedded in polyaniline matrix. EDAX spectrum shows the compositional analysis of the nanocomposite. FTIR spectra confirm the formation of nanocomposite of PANI and hexagonal AlZnO. The PL intensity of the nanocomposite is improved as compared to pure AlZnO.

  9. The synthesis of size-controlled 3C-SiC nanoflakes and their photoluminescent properties.

    PubMed

    Fan, Xiujun; Ye, Ruquan; Peng, Zhiwei; Wang, Juanjuan; Fan, Ailing; Guo, Xia

    2016-06-24

    Size-controlled and high-purity 3C-SiC nanoflakes (NFs) are synthesized on the tips of vertically aligned carbon nanotube (VA-CNT) carpets with a hot-filament chemical vapor deposition (HF-CVD) method. The average diameter and height of SiC NFs can be tuned by changing the thickness of per-deposited Si and growth conditions. The growth process of the SiC NFs is suggested to be dominated by a vapor-solid (VS) mechanism. The prepared SiC NFs exhibit quantum-confinement effects, emitting strong violet-blue photoluminescence (PL) under ultraviolet excitation. The PL peak position changes from 410 to 416 nm as the excitation line increases from 290 to 400 nm. This result opens the possibility for the application of the luminescent solid-state freestanding 3C-SiC NFs in photonics as well as photonics/electronics integration. PMID:27184338

  10. Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism

    SciTech Connect

    Wang Junzhuan; Suendo, V.; Abramov, A.; Yu Linwei; Roca i Cabarrocas, Pere

    2010-11-29

    Here, we investigate the enhanced tunable photoluminescence (PL) of hydrogenated polymorphous silicon carbon (pm-Si{sub 1-x}C{sub x}:H) thin films fabricated in a plasma enhanced chemical vapor deposition system. The silicon nanocrystal (nc-Si) inclusions are formed during gas-phase nucleation and incorporated in the hydrogenated amorphous silicon carbon (a-SiC:H) matrix. The nc-Si provides high-quality recombination centers for the photogenerated carriers in the pm-Si{sub 1-x}C{sub x}:H material, while the a-SiC:H matrix plays a role of sensitizer. We elucidate and provide experimental evidence for this excitation-transfer mechanism. Strongly enhanced PL performance can be achieved by effective matrix passivation that favors a diffusion-driven carrier recombination in the nc-Si centers.

  11. Chemical doping modulation of nonlinear photoluminescence properties in monolayer MoS2

    NASA Astrophysics Data System (ADS)

    Mouri, Shinichiro; Miyauchi, Yuhei; Matsuda, Kazunari

    2016-05-01

    We demonstrate a simple modulation technique of nonlinear optical properties in monolayer (1L) MoS2 via chemical doping. The strong nonlinear behavior of the exciton photoluminescence (PL) intensity is observed with increasing excitation power density for low-electron-density 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ)-doped 1L-MoS2, whereas the exciton PL intensity of as-prepared, heavily electron-doped 1L-MoS2 exhibits weak sublinear behavior. These results are attributable to an enhanced exciton–exciton annihilation rate for the excitons in F4TCNQ-doped 1L-MoS2 as the dominant decay pathway under strong optical excitation conditions.

  12. Defect-Band Emission Photoluminescence Imaging on Multi-Crystalline Si Solar Cells

    SciTech Connect

    Yan, F.; Johnston, S.; Zaunbrecher, K.; Al-Jassim, M.; Sidelkheir, O.; Blosse, A.

    2011-01-01

    Defect-band photoluminescence (PL) imaging with an InGaAs camera was applied to multicrystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from the defect-band emission images. On the defect-band emission images, the bright regions that originate from the grain boundaries and defect clusters were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters.

  13. Convenient synthesis of stable silver quantum dots with enhanced photoluminescence emission by laser fragmentation

    NASA Astrophysics Data System (ADS)

    Shuang, Li; Ming, Chen

    2016-04-01

    A new strategy for the facile synthesis of very stable and mono-dispersed silver (Ag) quantum dots (QDs) is developed by laser fragmentation of bulk Ag in water using polysorbate 80 as a dispersing and stabilizing agent. The surfactant plays an important role in the formation of size-controlled Ag nano-structures. The Ag QDs have excellent photo-stability of ∼500 h and enhanced photoluminescence (PL) at 510 nm. This has significant implications for selective and ultrasensitive PL probes. Based on laser fragmentation in the biocompatible surfactant solution, our results have opened up a novel paradigm to obtain stable metal QDs directly from bulk targets. This is a breakthrough in the toxicity problems that arise from standard chemical fabrication. Project supported by the National Natural Science Foundation of China (Grant Nos. 11575102, 11105085, 11275116, and 11375108) and the Fundamental Research Funds of Shandong University, China (Grant No. 2015JC007).

  14. Mg acceptor level in InN epilayers probed by photoluminescence

    NASA Astrophysics Data System (ADS)

    Khan, N.; Nepal, N.; Sedhain, A.; Lin, J. Y.; Jiang, H. X.

    2007-07-01

    Mg-doped InN epilayers were grown on sapphire substrates by metal organic chemical vapor deposition. Effects of Mg concentration on the photoluminescence (PL) emission properties have been investigated. An emission line at ˜0.76eV, which was absent in undoped InN epilayers and was about 60meV below the band-to-band emission peak at ˜0.82eV, was observed to be the dominant emission in Mg-doped InN epilayers. The PL spectral peak position and the temperature dependent emission intensity corroborated each other and suggested that the Mg acceptor level in InN is about 60meV above the valance band maximum.

  15. Photoluminescence quantum yield of PbS nanocrystals in colloidal suspensions

    SciTech Connect

    Greben, M.; Fucikova, A.; Valenta, J.

    2015-04-14

    The absolute photoluminescence (PL) quantum yield (QY) of oleic acid-capped colloidal PbS quantum dots (QDs) in toluene is thoroughly investigated as function of QD size, concentration, excitation photon energy, and conditions of storage. We observed anomalous decrease of QY with decreasing concentration for highly diluted suspensions. The ligand desorption and QD-oxidation are demonstrated to be responsible for this phenomenon. Excess of oleic acid in suspensions makes the QY values concentration-independent over the entire reabsorption-free range. The PL emission is shown to be dominated by surface-related recombinations with some contribution from QD-core transitions. We demonstrate that QD colloidal suspension stability improves with increasing the concentration and size of PbS QDs.

  16. Photoluminescence and thermoluminescence properties of Y3(Al,Ga)5O12:Tb3+ phosphor

    NASA Astrophysics Data System (ADS)

    Yousif, A.; Som, S.; Swart, H. C.

    2016-01-01

    A comparative study of the structural, photoluminescence (PL) and thermoluminescence (TL) properties of Y3(Al,Ga)5O12:Tb3+ phosphor powder was performed. The scanning electron microscope images showed that the phosphor particles were agglomerated and irregular in shape. The bigger particles consisted of smaller spherically shaped agglomerated particles ranging in size between 0.5 and 1 μm. The UV-VUV synchrotron radiation was used to study the luminescence properties of the phosphor. The TL study was performed after the sample was irradiated by γ-rays obtained from a 60Co target in the dose range of 10-50 Gy. The effect of heating rate on the TL glow curves and trapping parameters was also calculated. The correlation between PL and TL was explored.

  17. Probing the photoluminescence properties of gold nanoclusters by fluorescence lifetime correlation spectroscopy

    SciTech Connect

    Yuan, C. T. Lin, T. N.; Shen, J. L.; Lin, C. A.; Chang, W. H.; Cheng, H. W.; Tang, J.

    2013-12-21

    Gold nanoclusters (Au NCs) have attracted much attention for promising applications in biological imaging owing to their tiny sizes and biocompatibility. So far, most efforts have been focused on the strategies for fabricating high-quality Au NCs and then characterized by conventional ensemble measurement. Here, a fusion single-molecule technique combining fluorescence correlation spectroscopy and time-correlated single-photon counting can be successfully applied to probe the photoluminescence (PL) properties for sparse Au NCs. In this case, the triplet-state dynamics and diffusion process can be observed simultaneously and the relevant time constants can be derived. This work provides a complementary insight into the PL mechanism at the molecular levels for Au NCs in solution.

  18. Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy

    NASA Astrophysics Data System (ADS)

    Das, S. K.; Das, T. D.; Dhar, S.; de la Mare, M.; Krier, A.

    2012-01-01

    We report the first observation of photoluminescence (PL) from the dilute bismide alloy GaSbBi. Epitaxial layers are grown by liquid phase epitaxy technique onto GaSb (1 0 0) substrates and PL is obtained in the near infrared spectral range ( λ ˜ 1.6 μm). Incorporation of 0.2, 0.3 and 0.4 at% Bi to the layer results in a decrease of band gap energy up to 40 meV as well as an increase of luminescence from the sample. Structural analysis confirms the successful incorporation of Bi consistent with an increase in lattice parameter. Raman spectroscopy measurements indicate vibrational modes due to GaBi as well as to free Bi atoms residing at interstitial spaces.

  19. Enhancement of field emission and photoluminescence properties of graphene-SnO2 composite nanostructures.

    PubMed

    Ding, Jijun; Yan, Xingbin; Li, Jun; Shen, Baoshou; Yang, Juan; Chen, Jiangtao; Xue, Qunji

    2011-11-01

    In this study, the SnO(2) nanostructures and graphene-SnO(2) (G-SnO(2)) composite nanostructures were prepared on n-Si (100) substrates by electrophoretic deposition and magnetron sputtering techniques. The field emission of SnO(2) nanostructures is improved largely by depositing graphene buffer layer, and the field emission of G-SnO(2) composite nanostructures can also further be improved by decreasing sputtering time of Sn nanoparticles to 5 min. The photoluminescence (PL) spectra of the SnO(2) nanostructures revealed multipeaks, which are consistent with previous reports except for a new peak at 422 nm. Intensity of six emission peaks increased after depositing graphene buffer layer. Our results indicated that graphene can also be used as buffer layer acting as interface modification to simultaneity improve the field emission and PL properties of SnO(2) nanostructures effectively. PMID:21967167

  20. Photoluminescence study of high density Si quantum dots with Ge core

    NASA Astrophysics Data System (ADS)

    Kondo, K.; Makihara, K.; Ikeda, M.; Miyazaki, S.

    2016-01-01

    Si quantum dots (Si-QDs) with Ge core were self-assembled on thermally grown SiO2 from alternate thermal decomposition of pure SiH4 and GeH4 diluted with He. When the sample was excited by the 979 nm line of a semiconductor laser, fairly broad photoluminescence (PL) spectra in the region of 0.6-0.8 eV were observed at room temperature. The observed PL spectra suggested that radiative recombination of photo-generated carriers through quantized states of Ge core is the dominant pathway for the emission from the dots, reflecting the type II energy band discontinuity between the Si clad and Ge core. We also found that P-δ doping to Ge core plays an important role in recombination through the quantized states in the valence band of Ge core and P donor levels.

  1. Correlation between photoluminescence and Fourier transform infrared spectra in tetra-ethyl-ortho-silicate thin films

    NASA Astrophysics Data System (ADS)

    Choi, Won Chel; Kim, Tae Geun; Kim, Jin-Sang

    2006-02-01

    We report strong visible photoluminescence (PL) from thermally treated tetra-ethyl-ortho-silicate (TEOS) thin films at room temperature. High-resolution transmission electron microscope (HRTEM) studies showed that the PL originated from nanocrystalline-Si (nc-Si). HRTEM images showed that as-grown TEOS thin films had quasi-static amorphous (QSA) SiO2 phases instead of the typical amorphous (TA) SiO2 phases, and that they divided into small pieces of nc-Si after thermal treatment. In addition, Fourier transform infrared (FTIR) investigations showed that the QSA-SiO2 phases were composed of three types of bonding modes (i.e., Si-O-Si bending, Si-O bending, and Si-O-Si stretching), which play important roles in the formation of the nc-Si at relatively lower annealing temperatures.

  2. Enhanced photoluminescence of Si nanocrystals-doped cellulose nanofibers by plasmonic light scattering

    SciTech Connect

    Sugimoto, Hiroshi; Zhang, Ran; Reinhard, Björn M.; Fujii, Minoru; Perotto, Giovanni; Marelli, Benedetto; Omenetto, Fiorenzo G.; Dal Negro, Luca

    2015-07-27

    We report the development of bio-compatible cellulose nanofibers doped with light emitting silicon nanocrystals and Au nanoparticles via facile electrospinning. By performing photoluminescence (PL) spectroscopy as a function of excitation wavelength, we demonstrate plasmon-enhanced PL by a factor of 2.2 with negligible non-radiative quenching due to plasmon-enhanced scattering of excitation light from Au nanoparticles to silicon nanocrystals inside the nanofibers. These findings provide an alternative approach for the development of plasmon-enhanced active systems integrated within the compact nanofiber geometry. Furthermore, bio-compatible light-emitting nanofibers prepared by a cost-effective solution-based processing are very promising platforms for biophotonic applications such as fluorescence sensing and imaging.

  3. Defect-Band Emission Photoluminescence Imaging on Multi-Crystalline Si Solar Cells: Preprint

    SciTech Connect

    Yan, F.; Johnston, S.; Zaunbrecher, K.; Al-Jassim, M.; Sidelkheir, O.; Blosse, A.

    2011-07-01

    Defect-band photoluminescence (PL) imaging with an InGaAs camera was applied to multicrystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from the defect-band emission images. On the defect-band emission images, the bright regions that originate from the grain boundaries and defect clusters were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters.

  4. The synthesis of size-controlled 3C-SiC nanoflakes and their photoluminescent properties

    NASA Astrophysics Data System (ADS)

    Fan, Xiujun; Ye, Ruquan; Peng, Zhiwei; Wang, Juanjuan; Fan, Ailing; Guo, Xia

    2016-06-01

    Size-controlled and high-purity 3C-SiC nanoflakes (NFs) are synthesized on the tips of vertically aligned carbon nanotube (VA-CNT) carpets with a hot-filament chemical vapor deposition (HF-CVD) method. The average diameter and height of SiC NFs can be tuned by changing the thickness of per-deposited Si and growth conditions. The growth process of the SiC NFs is suggested to be dominated by a vapor–solid (VS) mechanism. The prepared SiC NFs exhibit quantum-confinement effects, emitting strong violet-blue photoluminescence (PL) under ultraviolet excitation. The PL peak position changes from 410 to 416 nm as the excitation line increases from 290 to 400 nm. This result opens the possibility for the application of the luminescent solid-state freestanding 3C-SiC NFs in photonics as well as photonics/electronics integration.

  5. [Effect of substrate temperature on structure and photoluminescence of ZnMgO films].

    PubMed

    Dong, Li-Na; Wang, Yu-Xin; Sun, Jing-Chang; Zheng, Ya-Ru; Zhang, Huan; Liang, Ming; Lin, Mao-Kui; Cui, Shuo

    2013-08-01

    ZnMgO films were deposited on quartz glass substrates by the ultrasonic spray pyrolysis at different substrate temperatures (450-550 degrees C). The structural, surface morphological and optical properties of the samples were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM) and photoluminescence (PL) spectroscopy. The results demonstrate that the substrate temperature has important effect on structural and optical characteristics. All the films have hexagonal wurtzite polycrystalline structures and the c-axis preferential orientation has an optimum temperature of 530 degrees C. The sample prepared at this temperature owns uniform grain size, smooth surface morphology and better crystalline quality. The width of deep-level emission decreases and the near band edge (NBE) ultraviolet emission peak appears with the increase in temperature by the PL spectrum. When the temperature arrives to 530 degrees C, a distinct NBE emission peak can be observed at 374. 5 nm, while the deep level emission is almost undetectable. PMID:24159844

  6. Defect induced photoluminescence and ferromagnetic properties of bio-compatible SWCNT/Ni hybrid bundles.

    PubMed

    Gupta, Vinay; Gupta, Bipin Kumar; Kotnala, R K; Narayanan, T N; Grover, Vaneet; Shah, Jyoti; Agrawal, Vikash; Chand, Suresh; Shanker, Virendra

    2011-10-15

    Designing of bio-compatible nanomagnets with multiple functionalities receives immense scientific attention due to their potential applications in bio-labeling, medical diagnosis and treatment. Here we report the synthesis of Nickel (Ni) incorporated single-walled carbon nanotube (SWCNT) hybrid and bio-compatible bundles having interesting magnetic and photoluminescence (PL) properties. The SWCNT exhibits a high-crystallinity and it has an average diameter of ∼1.7 nm. Ni particles of 10-20 nm were incorporated within the SWCNT bundles. These hybrid bundles exhibit PL and it is attributed to the presence of delocalized π electrons and their recombination at the defective sites of SWCNT. Magnetic characterization revealed that the SWCNT/Ni hybrid bundle possesses a high (50 Oe) coercivity compared to bulk Ni and a long range ferromagnetic ordering at room temperature. MTT-assay has been conducted to study the cytotoxicity of these hybrid nanostructures. PMID:21802691

  7. Photoluminescence of CdTe Crystals Grown by Contactless PVT Method

    NASA Technical Reports Server (NTRS)

    Palosz, W.; Grasza, K.; Cui, Y.; Wright, G.; Roy, U. N.; Burger, A.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    High quality CdTe crystals with resistivities higher than 10(exp 8) Omega cm were grown by the 'contactless' PVT (physical vapor transport) technique. Group III elements In and Al, and the transition metal Sc were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. It was found that the emission peaks at 1.584 eV and 1.581 eV exist only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/indium complex. The intensity of the broadband centered at 1.43 eV decreases dramatically with introduction of Sc.

  8. Photoluminescence of CdTe Crystals Grown by Physical Vapor Transport

    NASA Technical Reports Server (NTRS)

    Curreri, Peter A. (Technical Monitor); Palosz, W.; Grasza, K.; Boyd, P. R.; Cui, Y.; Wright, G.; Roy, U. N.; Burger, A.

    2002-01-01

    High quality CdTe crystals with resistivities higher than 10(exp 8) omega cm were grown by the physical vapor transport technique. Indium, Aluminum, and the transition metal Scandium were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. The emission peaks at 1.584 eV and 1.581 eV were found only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/indium complex. The intensity of the broadband centered at 1.43 eV decreases strongly with introduction of Sc.

  9. Photoluminescence of CdTe Crystals Grown by Physical-Vapor Transport

    NASA Technical Reports Server (NTRS)

    Palosz, W.; Grasza, K.; Boyd, P. R.; Cui, Y.; Wright, G.; Roy, U. N.; Burger, A.

    2003-01-01

    High-quality CdTe crystals with resistivities higher than 10(exp 8) omega cm were grown by the physical-vapor transport (PVT) technique. Indium, aluminum, and the transition-metal scandium were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. The emission peaks at 1.584 eV and 1.581 eV were found only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/In complex. The intensity of the broadband centered at 1.43 eV decreases strongly with introduction of Sc.

  10. Improved photoluminescence property of CTAB assisted polyaniline-AlZnO nanocomposite

    SciTech Connect

    Mitra, Mousumi; Banerjee, Dipali; Kargupta, Kajari; Ganguly, Saibal

    2015-06-24

    Polyaniline-Al doped ZnO ((PANI-AlZnO:: 70:30) nanocomposite was prepared via in situ chemical oxidative polymerization, while the hexagonal powder of AlZnO was synthesized via sol-gel technique, using Hexadecyltrimethylammonium bromide (CTAB) as a capping agent. The prepared nanocomposite was characterized by High resolution transmission electron microscopy (HRTEM), EDAX, X-ray diffraction (XRD) and Fourier transforms infrared (FTIR) spectra. The optical property of the nanomaterials is examined by photoluminescence (PL) spectra analysis. The XRD pattern confirms the formation of Al doped ZnO as well as PANI. The HRTEM images of the composite showed the formation of hexagonal AlZnO embedded in polyaniline matrix. EDAX spectrum shows the compositional analysis of the nanocomposite. FTIR spectra confirm the formation of nanocomposite of PANI and hexagonal AlZnO. The PL intensity of the nanocomposite is improved as compared to pure AlZnO.

  11. Using Low Temperature Photoluminescence Spectroscopy to Investigate CH₃NH₃PbI₃ Hybrid Perovskite Degradation.

    PubMed

    Jemli, Khaoula; Diab, Hiba; Lédée, Ferdinand; Trippé-Allard, Gaelle; Garrot, Damien; Geffroy, Bernard; Lauret, Jean-Sébastien; Audebert, Pierre; Deleporte, Emmanuelle

    2016-01-01

    Investigating the stability and evaluating the quality of the CH₃NH₃PbI₃ perovskite structures is quite critical both to the design and fabrication of high-performance perovskite devices and to fundamental studies of the photophysics of the excitons. In particular, it is known that, under ambient conditions, CH₃NH₃PbI₃ degrades producing some PbI₂. We show here that low temperature Photoluminescence (PL) spectroscopy is a powerful tool to detect PbI₂ traces in hybrid perovskite layers and single crystals. Because PL spectroscopy is a signal detection method on a black background, small PbI₂ traces can be detected, when other methods currently used at room temperature fail. Our study highlights the extremely high stability of the single crystals compared to the thin layers and defects and grain boundaries are thought to play an important role in the degradation mechanism. PMID:27399669

  12. Formation and dynamics of "waterproof" photoluminescent complexes of rare earth ions in crowded environment.

    PubMed

    Ignatova, Tetyana; Blades, Michael; Duque, Juan G; Doorn, Stephen K; Biaggio, Ivan; Rotkin, Slava V

    2014-12-28

    Understanding behavior of rare-earth ions (REI) in crowded environments is crucial for several nano- and bio-technological applications. Evolution of REI photoluminescence (PL) in small compartments inside a silica hydrogel, mimic to a soft matter bio-environment, has been studied and explained within a solvation model. The model uncovered the origin of high PL efficiency to be the formation of REI complexes, surrounded by bile salt (DOC) molecules. Comparative study of these REI-DOC complexes in bulk water solution and those enclosed inside the hydrogel revealed a strong correlation between an up to 5×-longer lifetime of REIs and appearance of the DOC ordered phase, further confirmed by dynamics of REI solvation shells, REI diffusion experiments and morphological characterization of microstructure of the hydrogel. PMID:25379879

  13. Electronic excitation and relaxation processes of oxygen vacancies in YSZ and their involvement in photoluminescence

    NASA Astrophysics Data System (ADS)

    Morimoto, Takaaki; Kuroda, Yasuhiro; Ohki, Yoshimichi

    2016-09-01

    Yttria-stabilized zirconia (YSZ) consists of zirconia and yttria and oxygen vacancies appear in accordance with the ratio of yttria. The oxygen vacancy would sometimes give annoyance, but it would be beneficial on other occasions, depending on its applications. Photoluminescence (PL) due to oxygen vacancies induced by photons with energies around 5.5 eV exhibits two decay time constants. As a possible reason for this, an oxygen vacancy changes its charging state from neutral to positive monovalent by losing an electron when YSZ is irradiated by ultraviolet photons. The PL decays either in a ms range or in a ns range, depending on whether the oxygen vacancies are neutral or positive monovalent.

  14. Photoluminescence studies of growth-sector dependence of nitrogen distribution in synthetic Ib diamond

    SciTech Connect

    Wang, Kaiyue; Steeds, John W.; Li, Zhihong; Tian, Yuming

    2014-08-15

    The photoluminescence technology previously employed to investigate the boron distribution of type IIb diamond has now been applied to study the nitrogen distribution of type Ib diamond. All growth sectors were clearly distinguished by the characteristic colors and the brightness of the synthetic Ib diamond's cathodoluminescence topography. As a measure of the concentration of nitrogen impurity, the nitrogen-vacancy luminescence gave relative concentrations in different growth sectors as: the (111) sector was the highest, followed by the (311), (100) and (511) sectors. The results were reconfirmed by the evidence of the broadened and strengthened zero phonon lines of nitrogen-vacancy center with the increase of nitrogen concentration of type Ib diamond. - Highlights: • The growth sectors were clearly distinguished by CL technology. • The N distribution was investigated by the examination of PL spectroscopy. • Results showed that (111) has the highest N, followed by (311), (100) and (511). • The conclusion was reconfirmed by the PL results of NV center.

  15. Charge-tunnelling and self-trapping: common origins for blinking, grey-state emission and photoluminescence enhancement in semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Osborne, M. A.; Fisher, A. A. E.

    2016-04-01

    Understanding instabilities in the photoluminescence (PL) from light emitting materials is crucial to optimizing their performance for different applications. Semiconductor quantum dots (QDs) offer bright, size tunable emission, properties that are now being exploited in a broad range of developing technologies from displays and solar cells to biomaging and optical storage. However, instabilities such as photoluminescence intermittency, enhancement and bleaching of emission in these materials can be detrimental to their utility. Here, we report dielectric dependent blinking, intensity-``spikes'' and low-level, ``grey''-state emission, as well as PL enhancement in ZnS capped CdSe QDs; observations that we found consistent with a charge-tunnelling and self-trapping (CTST) description of exciton-dynamics on the QD-host system. In particular, modulation of PL in grey-states and PL enhancement are found to have a common origin in the equilibrium between exciton charge carrier core and surface-states within the CTST framework. Parameterized in terms of size and electrostatic properties of the QD and its nanoenvironment, the CTST offers predictive insight into exciton-dynamics in these nanomaterials.Understanding instabilities in the photoluminescence (PL) from light emitting materials is crucial to optimizing their performance for different applications. Semiconductor quantum dots (QDs) offer bright, size tunable emission, properties that are now being exploited in a broad range of developing technologies from displays and solar cells to biomaging and optical storage. However, instabilities such as photoluminescence intermittency, enhancement and bleaching of emission in these materials can be detrimental to their utility. Here, we report dielectric dependent blinking, intensity-``spikes'' and low-level, ``grey''-state emission, as well as PL enhancement in ZnS capped CdSe QDs; observations that we found consistent with a charge-tunnelling and self-trapping (CTST

  16. Photoluminescence mechanism model for oxidized porous silicon and nanoscale-silicon-particle-embedded silicon oxide

    NASA Astrophysics Data System (ADS)

    Qin, G. G.; Li, Y. J.

    2003-08-01

    There is much debate about the photoluminescence (PL) mechanisms of the nanoscale Si/Si oxide systems containing oxidized porous silicon and a nanoscale-Si-particle (NSP)—embedded Si oxide deposited by chemical vapor deposition, sputtering, or Si-ion implanting into Si oxide. In this paper, we suggest that two competitive processes, namely, the quantum confinement (QC) process and the quantum confinement-luminescence center (QCLC) process, take place in the PL. The photoexcitation occurs in the NSPs for both of the processes, while the photoemission occurs either in the NSPs for the QC process or in the luminescence centers (LCs) in Si oxide adjacent to the NSPs for the QCLC process. The rates of the two processes are compared quantitatively. Which process plays the major role in PL is determined by the capture cross section, the luminescence efficiency, and the density of the LCs, and the sizes of the NSPs. For a nanoscale Si/Si oxide system with the LCs having certain capture cross-section and luminescence efficiency, the higher the LC density and the larger the sizes of NSPs, the more beneficial for the QCLC process to surpass the QC process, and vice versa. For certain LC parameters, there is a critical most probable size for the NSPs. When the most probable size of the NSPs is larger than the critical one, the QCLC process dominates the PL, and when the most probable size of the NSPs is smaller than the critical one, the QC process dominates the PL. When the most probable size of the NSPs is close to the critical one, both the QC and QCLC processes should be taken into account. We have used this model to discuss PL experimental results reported for some nanoscale Si/Si oxide systems.

  17. Synthesis, characterization and photoluminescence studies of Mn doped ZnS nanoparticles

    NASA Astrophysics Data System (ADS)

    Chandrakar, Raju Kumar; Baghel, R. N.; Chandra, V. K.; Chandra, B. P.

    2015-10-01

    The present paper reports the synthesis, characterization and photoluminescence (PL) studies of Mn doped ZnS nanoparticles prepared by chemical precipitation method using mercaptoethanol as a capping agent. The nanoparticles were characterized by X-ray diffraction (XRD), field emission gun scanning electron microscope (FEGSEM), and high resolution transmission electron microscope (HRTEM). When the concentrations of capping agent (merceptoethanol) used are 0 M, 0.01 M, 0.025 M, 0.040 M, and 0.060 M, the sizes of the nanoparticles are 2.98 nm, 2.80 nm, 2.61 nm, 2.20 nm and 2.10 nm, respectively. Two peaks are obtained in the PL spectra of ZnS:Mn nanoparticles for the excitation wavelength of 220 nm, in which the first peak shifts from 400 nm to 388 nm with decreasing size of nanocrystals, and the second peak lies at 583 nm and it does not shift with reducing size of nanocrystals. The PL spectra of ZnS:Mn nanoparticles were measured for different concentrations of merceptoethanol used. The concentration of Mn was kept 1.2%, in which two peaks were found for each sample of ZnS:Mn nanocrystals. The intensities of both the PL peaks increase with reducing size of the nanoparticles. The PL emission centered at 583 nm is the characteristics emission of Mn-ion which can be attributed to a 4T1 → 6A1 transition. However, the blue emission around 400 nm is very broad and originates from the radiative recombination involving defect states in the ZnS nanocrystals. Expressions derived for the dependence of PL intensities of peak-I and peak-II on the size of nanoparticles are in good agreement with experimental results.

  18. Photoluminescence and structure of sputter-deposited Zn2SiO4:Mn thin films

    NASA Astrophysics Data System (ADS)

    Lee, Yeon Oh; Kim, Joo Han

    2016-01-01

    Mn-doped Zn2SiO4 thin films were deposited on Si (100) substrates by radio-frequency (RF) magnetron sputtering. The deposited films were then annealed at temperatures ranging from 600 to 1200 °C in an air ambient for 1 hour. The as-deposited Zn2SiO4:Mn films exhibited an amorphous structure having a smooth surface and showed no photoluminescence (PL). Annealing at 600 °C was found to have little effect on the properties of the films. The films still remained amorphous with no PL. After annealing at 800 °C, the films were crystallized in a mixture of orthorhombic β-Zn2SiO4 and rhombohedral α-Zn2SiO4 phases. These films showed a PL emission spectrum that could be resolved into two bands, one centered at 520 nm in the green region and the other at 571 nm in the yellow region. The green PL emission originated from the 4T1 → 6A1 intrashell transition of Mn2+ ions in the α-Zn2SiO4 phase while the yellow emission was attributed to Mn2+ ions in β-Zn2SiO4. The films annealed at and above a temperature of 900 °C exhibited only the α-Zn2SiO4 phase, and the PL spectra of these films showed only the green emission band with a peak maximum at around 523 nm. The PL emission intensity increased with increasing annealing temperature, which was due to the better crystalline quality and the rougher surface morphology of the Zn2SiO4:Mn films annealed at higher temperatures.

  19. Photoassisted photoluminescence fine-tuning of gold nanodots through free radical-mediated ligand-assembly.

    PubMed

    Tseng, Yu-Ting; Cherng, Rochelle; Harroun, Scott G; Yuan, Zhiqin; Lin, Tai-Yuan; Wu, Chien-Wei; Chang, Huan-Tsung; Huang, Chih-Ching

    2016-05-14

    In this study, we have developed a simple photoassisted ligand assembly to fine-tune the photoluminescence (PL) of (11-mercaptoundecyl)-N,N,N-trimethylammonium bromide-capped gold nanodots (11-MUTAB-Au NDs). The 11-MUTAB-Au NDs (size: ca. 1.8 nm), obtained from the reaction of gold nanoparticles (ca. 3 nm) and 11-MUTAB, exhibited weak, near-infrared (NIR) PL at 700 nm with a quantum yield (QY) of 0.37% upon excitation at 365 nm. The PL QY of the Au NDs increased to 11.43% after reaction with 11-mercaptoundecanoic acid (11-MUA) for 30 min under ultraviolet (UV) light, which was accompanied by a PL wavelength shift to the green region (∼520 nm). UV-light irradiation accelerates 11-MUA assembly on the 11-MUTABAu NDs (11-MUA/11-MUTAB-Au NDs) through a radical-mediated reaction. Furthermore, the PL wavelength of the 11-MUA/11-MUTAB-Au NDs can be switched to 640 nm via cysteamine under UV-light irradiation. We propose that the PL of the Au NDs with NIR and visible emissions was originally from the surface thiol-Au complexes and the Au core, respectively. These dramatically different optical properties of the Au NDs were due to variation in the surface ligands, as well as the densities and surface oxidant states of the surface Au atoms/ions. These effects can be controlled by assembling surface thiol ligands and accelerated by UV irradiation. PMID:27118444

  20. Synthesis, structure and photoluminescence properties of Sm3+-doped BiOBr phosphor

    NASA Astrophysics Data System (ADS)

    Halappa, Pramod; Shivakumara, C.; Saraf, Rohit; Nagabhushana, H.

    2016-05-01

    Well-crystallized tetragonal layered BiOBr and Bi0.95Sm0.05OBr phosphors were prepared by the solid state method. These compounds were characterized using powder X-Ray diffraction and photoluminescence technique. In PL spectra, the electric dipole transitions dominate than other transitions which indicate that the Sm3+ ions occupy a site with an inversion center of BiOBr. CIE chromaticity diagram confirmed that these phosphors can be useful in the fabrication of red component in white light emitting diodes (WLEDs) for display device applications.

  1. Modification of Photoluminescence Properties of ZnO Island Films by Localized Surface Plasmons

    NASA Astrophysics Data System (ADS)

    Zhang, Yang; Li, Xue-Hong; Peng, Cheng-Xiao

    2012-10-01

    The modification of localised surface plasmons of photoluminescence properties of ZnO is studied. It is found that the ultraviolet emission is drastically enhanced, and the visible emission related to the defects is almost completely suppressed, after an Au layer of nanoparticles is deposited on the surface of ZnO island films. This pronounced change in PL spectra is attributed to the efficient electron transfer via the coupling of localised surface plasmons at the interface between the Au nanoparticle layer and ZnO films.

  2. Diameter Control and Photoluminescence of ZnO Nanorods from Trialkylamines

    DOE PAGESBeta

    Andelman, Tamar; Gong, Yinyan; Neumark, Gertrude; O'Brien, Stephen

    2007-01-01

    A novel solution method to control the diameter of ZnO nanorods is reported. Small diameter (2-3 nm) nanorods were synthesized from trihexylamine, and large diameter (50–80 nm) nanorods were synthesized by increasing the alkyl chain length to tridodecylamine. The defect (green) emission of the photoluminescence (PL) spectra of the nanorods varies with diameter, and can thus be controlled by the diameter control. The small ZnO nanorods have strong green emission, while the large diameter nanorods exhibit a remarkably suppressed green band. We show that this observation supports surface oxygen vacancies as the defect that gives rise to the green emission.

  3. Synthesis and Photoluminescent Properties of Eu²⁺-Doped BaSiF₆ Nanoparticles.

    PubMed

    Zhao, Xin; Hua, Ruinian; Zhang, Wei; Zhao, Jun; Tang, Dongxin; Sun, Zhengang

    2016-01-01

    By adjusting the molar ratio of oleic acid (OA), oleylamine (OM), and 1-octadecene (OD) ligands in reaction solution, Eu²⁺-doped BaSiF₆ nanoparticles were synthesized using a thermal decomposition synthesis route. Eu²⁺ ions have been successfully doped into BaSiF₆ host lattice and strong 4f-4f line emission of the Eu²⁺ in BaSiF₆ matrix is observed. Meanwhile, the photoluminescent (PL) properties of BaSiF₆:Eu²⁺ nanoparticles doping Eu²⁺ ions at different concentrations were also studied. PMID:27398531

  4. Chemical vapor deposition synthesis and photoluminescence properties of ZnS hollow microspheres

    SciTech Connect

    Pi Zhengbang; Su Xiaolu; Yang Chao; Tian Xike Pei Fang; Zhang Suxin; Zhen Jianhua

    2008-08-04

    ZnS hollow microspheres were prepared via a facile template-free chemical vapor deposition (CVD) route using metallic zinc powders and sulphur sublimed as reactants. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray spectrometer (EDX). The results showed that the as-prepared ZnS hollow spheres had uniform size about 4-8 {mu}m in diameter. The growth mechanism of such interesting was discussed. The optical property of the products was also recorded by means of photoluminescence (PL) spectroscopy.

  5. Temperature- and field-dependent energy transfer in CdSe nanocrystal aggregates studied by magneto-photoluminescence spectroscopy.

    PubMed

    Blumling, Daniel E; Tokumoto, Takahisa; McGill, Stephen; Knappenberger, Kenneth L

    2012-08-21

    The influence of temperature and applied magnetic fields on photoluminescence (PL) emission and electronic energy transfer (ET) of both isolated and aggregated CdSe nanocrystals was investigated. Following 400-nm excitation, temperature-dependent, intensity-integrated and energy-resolved PL measurements were used to quantify the emission wavelength and amplitude of isolated CdSe nanocrystals. The results indicated an approximately three-fold increase in PL intensity upon decreasing the temperature from 300 K to 6 K; this was attributed to a reduction of charge carrier access to nanocrystal surface trap states and suppression of thermal loss channels. Temperature-dependent PL measurements of aggregated CdSe nanocrystals, which included both energy-donating and -accepting particles, were analyzed using a modified version of Förster theory. Temperature-dependent ET efficiency increased from 0.55 to 0.75 upon decreasing the sample temperature from 225 K to 6 K, and the ET data contained the same trend observed for the PL of isolated nanoclusters. The application of magnetic fields to increase nanocrystal ET efficiency was studied using magneto-photoluminescence measurements recorded at a sample temperature of 1.6 K. We demonstrated that the exciton fine structure population of the donor was varied using applied magnetic fields, which in turn dictated the PL yield and the resultant ET efficiency of the CdSe nanocrystal aggregate system. The experimental data indicated an ET efficiency enhancement of approximately 7%, which was limited by the random orientation of the spherical nanocrystals in the thin film. PMID:22767253

  6. Magneto-Optical Study of Defect Induced Sharp Photoluminescence in LaAlO3 and SrTiO3.

    PubMed

    Sarkar, Soumya; Saha, Surajit; Motapothula, M R; Patra, Abhijeet; Cao, Bing-Chen; Prakash, Saurav; Cong, Chun Xiao; Mathew, Sinu; Ghosh, Siddhartha; Yu, Ting; Venkatesan, T

    2016-01-01

    Strongly correlated electronic systems such as Transition Metal Oxides often possess various mid-gap states originating from intrinsic defects in these materials. In this paper, we investigate an extremely sharp Photoluminescence (PL) transition originating from such defect states in two widely used perovskites, LaAlO3 and SrTiO3. A detailed study of the PL as a function of temperature and magnetic field has been conducted to understand the behavior and origin of the transition involved. The temperature dependence of the PL peak position for SrTiO3 is observed to be opposite to that in LaAlO3. Our results reveal the presence of a spin/orbital character in these transitions which is evident from the splitting of these defect energy levels under a high magnetic field. These PL transitions have the potential for enabling non-contact thermal and field sensors. PMID:27619076

  7. Efficient long wavelength interband photoluminescence from HgCdTe epitaxial films at wavelengths up to 26 μm

    SciTech Connect

    Morozov, S. V.; Rumyantsev, V. V. Antonov, A. V.; Gavrilenko, V. I.; Maremyanin, K. V.; Kudryavtsev, K. E.; Krasilnikova, L. V.; Mikhailov, N. N.; Dvoretskii, S. A.

    2014-02-17

    Photoluminescence (PL) and photoconductivity (PC) studies of Hg{sub 1−x}Cd{sub x}Te (0.19 ≤ x ≤ 0.23) epitaxial films are presented. Interband PL is observed at wavelengths from 26 to 6 μm and in the temperature range 18 K–200 K. The PL line full width at half maximum is about 6 meV (4kT) at 18 K and approaches its theoretical limit of 1.8kT at higher temperatures. Carrier recombination process is also investigated by time resolved studies of PL and PC at pulsed excitation. Radiative transitions are shown to be the dominating mechanism of carrier recombination at high excitation levels.

  8. Time resolved photoluminescence spectroscopy of narrow gap Hg1-xCdxTe/CdyHg1-yTe quantum well heterostructures

    NASA Astrophysics Data System (ADS)

    Morozov, S. V.; Rumyantsev, V. V.; Antonov, A. V.; Kadykov, A. M.; Maremyanin, K. V.; Kudryavtsev, K. E.; Mikhailov, N. N.; Dvoretskii, S. A.; Gavrilenko, V. I.

    2014-07-01

    Photoluminescence (PL) spectra and kinetics of narrow gap Hg1-xCdxTe/CdyHg1-yTe quantum well (QW) heterostructures grown by molecular beam epitaxy technique are studied. Interband PL spectra are observed from 18 K up to the room temperature. Time resolved studies reveal an additional PL line with slow kinetics (7 μs at 18 K) related to deep defect states in barrier layers. These states act as traps counteracting carrier injection into QWs. The decay time of PL signal from QW layers is about 5 μs showing that gain can be achieved at wavelengths 10-20 μm by placing such QWs in HgCdTe structures with waveguides.

  9. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  10. Carrier-density dependence of photoluminescence from localized states in InGaN/GaN quantum wells in nanocolumns and a thin film

    SciTech Connect

    Shimosako, N. Inose, Y.; Satoh, H.; Kinjo, K.; Nakaoka, T.; Oto, T.; Kishino, K.; Ema, K.

    2015-11-07

    We have measured and analyzed the carrier-density dependence of photoluminescence (PL) spectra and the PL efficiency of InGaN/GaN multiple quantum wells in nanocolumns and in a thin film over a wide excitation range. The localized states parameters, such as the tailing parameter, density and size of the localized states, and the mobility edge density are estimated. The spectral change and reduction of PL efficiency are explained by filling of the localized states and population into the extended states around the mobility edge density. We have also found that the nanocolumns have a narrower distribution of the localized states and a higher PL efficiency than those of the film sample although the In composition of the nanocolumns is higher than that of the film.

  11. Defect study of Cu2ZnSn(SxSe1-x)4 thin film absorbers using photoluminescence and modulated surface photovoltage spectroscopy

    NASA Astrophysics Data System (ADS)

    Lin, Xianzhong; Ennaoui, Ahmed; Levcenko, Sergiu; Dittrich, Thomas; Kavalakkatt, Jaison; Kretzschmar, Steffen; Unold, Thomas; Lux-Steiner, Martha Ch.

    2015-01-01

    Defect states in Cu2ZnSn(SxSe1-x)4 thin films with x = 0.28, 0.36, and 1 were studied by combining photoluminescence (PL) and modulated surface photovoltage (SPV) spectroscopy. A single broad band emission in the PL spectra was observed and can be related to quasi-donor-acceptor pair transitions. The analysis of the temperature dependent quenching of the PL band (x = 0.28, 0.36, and 1) and SPV (x = 0.28) signals resulted in activation energies below 150 meV for PL and about 90 and 300 meV for SPV. Possible intrinsic point defects that might be associated with these observed activation energies are discussed.

  12. Delocalized and localized charged excitons in single CdSe/CdS dot-in-rods revealed by polarized photoluminescence blinking

    NASA Astrophysics Data System (ADS)

    Ihara, Toshiyuki; Sato, Ryota; Teranishi, Toshiharu; Kanemitsu, Yoshihiko

    2014-07-01

    CdSe/CdS heterostructured nanocrystals with quasi-type-II band alignments provide an interesting platform for studying the photoluminescence (PL) blinking associated with their unique morphologies. By using simultaneous measurements of the PL intensity, lifetime, and polarization anisotropy, we reveal the role of the electron delocalization during the blinking of single CdSe/CdS dot-in-rods. We found that a significant change in the PL polarization anisotropy distinguishes between two kinds of charged excitons with different electron delocalizations. We report our observation of unique polarized PL blinking governed by the band alignments and the Coulomb interactions between the charges inside and outside the dot-in-rod.

  13. Plasmon-gating photoluminescence in graphene/GeSi quantum dots hybrid structures.

    PubMed

    Chen, Yulu; Wu, Qiong; Ma, Yingjie; Liu, Tao; Fan, Yongliang; Yang, Xinju; Zhong, Zhenyang; Xu, Fei; Lu, Jianping; Jiang, Zuimin

    2015-01-01

    The ability to control light-matter interaction is central to several potential applications in lasing, sensing, and communication. Graphene plasmons provide a way of strongly enhancing the interaction and realizing ultrathin optoelectronic devices. Here, we find that photoluminescence (PL) intensities of the graphene/GeSi quantum dots hybrid structures are saturated and quenched under positive and negative voltages at the excitation of 325 nm, respectively. A mechanism called plasmon-gating effect is proposed to reveal the PL dependence of the hybrid structures on the external electric field. On the contrary, the PL intensities at the excitation of 405 and 795 nm of the hybrid structures are quenched due to the charge transfer by tuning the Fermi level of graphene or the blocking of the excitons recombination by excitons separation effect. The results also provide an evidence for the charge transfer mechanism. The plasmon gating effect on the PL provides a new way to control the optical properties of graphene/QD hybrid structures. PMID:26631498

  14. Photoluminescence and SIMS studies of hydrogen passivation of Mg-doped p-type gallium nitride

    SciTech Connect

    Li, Y.; Lu, Y.; Hwang, C.Y.; Schurman, M.; Mayo, W.; Shen, H.; Wraback, M.; Salagaj, T.; Stall, R.A.

    1996-11-01

    The effects of hydrogen passivation in MOCVD grown Mg doped p-type GaN were studied using low temperature (5K) photoluminescence (PL) and secondary-ion-mass spectroscopy (SIMS). GaN films with different Mg doping level were annealed at 700 C in N{sub 2} ambient with different annealing times. The SIMS results indicate that the hydrogen concentration increases with increasing Mg doping level in the as-grown Mg:GaN film. After 20 minutes of annealing, most of the hydrogen escapes form the film. The 3.455 eV PL peak before annealing and the 3.446 eV peak after annealing found in the mg doped samples were attributed to the exciton bound to the Mg-H complex and to the Mg acceptor, respectively. The shift of the bound exciton peak to higher energy (3.465 eV) in the lightly doped sample is due to an effective n-type compensation associated with an annealing-induced increase in the nitrogen vacancies. In heavily doped Mg:GaN, the decreases in the integrated PL intensity after 700 C annealing may be associated with the hydrogen depassivation of nonradiative recombination centers in the film. The increase of PL intensity in the lightly doped sample after annealing is attributed to the reduction of defects by the annealing process.

  15. Dynamics of GaN band edge photoluminescence at near-room-temperature regime

    NASA Astrophysics Data System (ADS)

    Chen, Xiang-Bai; Huso, Jesse; Morrison, John L.; Bergman, Leah

    2006-02-01

    In this paper we present an approach based on the known radiative recombination rate model to study the dynamics and characteristics of photoluminescence (PL) transitions at room-temperature (RT) regime of GaN thin film. The model states that the dependence of the PL intensity on the laser excitation intensity is IPL~Ilaserα in which the value of the exponent α reveals whether the PL is due to an exciton or band gap recombination mechanism. We elaborated on the model and studied the temperature behavior of the exponent α in the range of 180-400 K in order to explore the recombination type for that range. It was found that at the temperature range just below RT ~180-270 K the exponent is a slowly increasing function of temperature and has an average value of ~1.2, implying a free-exciton recombination mechanism. At ~280 K the value of the exponent was found to exhibit a step-function-like behavior with a sharp increase from 1.2 to 1.7. At the temperature range just above RT ~300-400 K the exponent was found again to be a slowly increasing function of temperature with an average value of ~1.7, implying that at that temperature range the PL involves mainly band gap transitions. From the temperature behavior of the exponent, the activation energy of the free exciton was inferred to be ~24 meV.

  16. Efficient Excitonic Photoluminescence in Direct and Indirect Band Gap Monolayer MoS2.

    PubMed

    Steinhoff, A; Kim, J-H; Jahnke, F; Rösner, M; Kim, D-S; Lee, C; Han, G H; Jeong, M S; Wehling, T O; Gies, C

    2015-10-14

    We discuss the photoluminescence (PL) of semiconducting transition metal dichalcogenides on the basis of experiments and a microscopic theory. The latter connects ab initio calculations of the single-particle states and Coulomb matrix elements with a many-body description of optical emission spectra. For monolayer MoS2, we study the PL efficiency at the excitonic A and B transitions in terms of carrier populations in the band structure and provide a quantitative comparison to an (In)GaAs quantum well-structure. Suppression and enhancement of PL under biaxial strain is quantified in terms of changes in the local extrema of the conduction and valence bands. The large exciton binding energy in MoS2 enables two distinctly different excitation methods: above-band gap excitation and quasi-resonant excitation of excitonic resonances below the single-particle band gap. The latter case creates a nonequilibrium distribution of carriers predominantly in the K-valleys, which leads to strong emission from the A-exciton transition and a visible B-peak even if the band gap is indirect. For above-band gap excitation, we predict a strongly reduced emission intensity at comparable carrier densities and the absence of B-exciton emission. The results agree well with PL measurements performed on monolayer MoS2 at excitation wavelengths of 405 nm (above) and 532 nm (below the band gap). PMID:26322814

  17. Synthesis and photoluminescence spectroscopy of BaGeF6:Mn4+ red phosphor

    NASA Astrophysics Data System (ADS)

    Sekiguchi, Daisuke; Adachi, Sadao

    2015-04-01

    We synthesized Mn4+-activated BaGeF6 red phosphor by the chemical reaction method from HF, H2SiF6, BaF2, KMnO4, and GeO2 powder. The structural and optical properties of BaGeF6:Mn4+ were investigated using X-ray diffraction analysis, secondary electron microscopy observation, electron spin resonance measurement, photoluminescence (PL), PL excitation (PLE) and Raman scattering spectroscopies, and luminescence decay time measurement. Temperature dependence of the PL intensity was measured from T = 20 to 500 K and analyzed by taking into consideration the Bose-Einstein phonon occupation number. The PLE spectra measured at T = 20 and 300 K and luminescence decay time at T = 20-460 K were also analyzed based on the Franck-Condon and conventional thermal quenching models, respectively. Comprehensive discussion was given on the Mn4+-related PL properties and Raman scattering behaviors in a family of the barium hexafluorometallate phosphors.

  18. Plasmon-gating photoluminescence in graphene/GeSi quantum dots hybrid structures

    NASA Astrophysics Data System (ADS)

    Chen, Yulu; Wu, Qiong; Ma, Yingjie; Liu, Tao; Fan, Yongliang; Yang, Xinju; Zhong, Zhenyang; Xu, Fei; Lu, Jianping; Jiang, Zuimin

    2015-12-01

    The ability to control light-matter interaction is central to several potential applications in lasing, sensing, and communication. Graphene plasmons provide a way of strongly enhancing the interaction and realizing ultrathin optoelectronic devices. Here, we find that photoluminescence (PL) intensities of the graphene/GeSi quantum dots hybrid structures are saturated and quenched under positive and negative voltages at the excitation of 325 nm, respectively. A mechanism called plasmon-gating effect is proposed to reveal the PL dependence of the hybrid structures on the external electric field. On the contrary, the PL intensities at the excitation of 405 and 795 nm of the hybrid structures are quenched due to the charge transfer by tuning the Fermi level of graphene or the blocking of the excitons recombination by excitons separation effect. The results also provide an evidence for the charge transfer mechanism. The plasmon gating effect on the PL provides a new way to control the optical properties of graphene/QD hybrid structures.

  19. Structural and photoluminescence properties of terbium-doped zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Ningthoujam Surajkumar, Singh; Shougaijam Dorendrajit, Singh; Sanoujam Dhiren, Meetei

    2014-05-01

    We present in this paper a study of the structural and photoluminescence (PL) properties of terbium (Tb) doped zinc oxide (ZnO) nanoparticles synthesized by a simple low temperature chemical precipitation method, using zinc acetate and terbium nitrate in an isopropanol medium with diethanolamine (DEA) as the capping agent at 60 °C. The as-prepared samples were heat treated and the PL of the annealed samples were studied. The prepared nanoparticles were characterized with X-ray diffraction (XRD). The XRD patterns show the pattern of typical ZnO nanoparticles and correspond with the standard XRD pattern given by JCPDS card No. 36-1451, showing the hexagonal phase structure. The PL intensity was enhanced due to Tb3+ doping, and it decreased at higher concentrations of Tb3+ doping after reaching a certain optimum concentration. The PL spectra of Tb3+ doped samples exhibited blue, bluish green, and green emissions at 460 nm (5D3 - 7F3), 484 nm (5D4 - 7F6), and 530 nm (5D4 - 7F5), respectively, which were more intense than the emissions for the undoped ZnO sample. Based on the results, an energy level schematic diagram was proposed to explain the possible electron transition processes.

  20. Temperature-dependent photoluminescence imaging of GaAs/AlGaAs heterostructure quantum well tubes

    NASA Astrophysics Data System (ADS)

    Shi, Teng; Jackson, Howard; Smith, Leigh; Yarrison-Rice, Jan; Jiang, Nian; Tan, Hoe; Gao, Qiang; Jagadish, Chennupati

    2014-03-01

    Two sets of GaAs/AlGaAs core-multi shell nanowire quantum well tubes (QWTs) grown by MOCVD, with QW widths of 2nm and 6nm are dispersed onto a 4mm diameter hemispherical solid immersion lens. We obtain high spatial resolution photoluminescence (PL) images of single nanowires (NWs) from 10 K up to 120 K. High spectral resolution PL spectra reveal several narrow emission lines on high energy side of the 2nm QWT at low temperatures. In the 6nm QW, such narrow emission lines are not observed. Spatially-resolved PL images show that these localized states are randomly distributed along the NW long axis. Temperature-dependent PL imaging indicates that the quantum dot emissions disappear at temperatures above 50K. The recombination lifetime for electrons and holes in the QWT for the 2nm and 6nm QWTs are 500ps and 800 ps, respectively. We observe the recombination lifetime increases slightly with increasing temperature. We acknowledge the NSF through DMR-1105362, 1105121 and ECCS-1100489, and the Australian Research Council.

  1. Comparison of Photoluminescence Imaging on Starting Multi-Crystalline Silicon Wafers to Finished Cell Performance: Preprint

    SciTech Connect

    Johnston, S.; Yan, F.; Dorn, D.; Zaunbrecher, K.; Al-Jassim, M.; Sidelkheir, O.; Ounadjela, K.

    2012-06-01

    Photoluminescence (PL) imaging techniques can be applied to multicrystalline silicon wafers throughout the manufacturing process. Both band-to-band PL and defect-band emissions, which are longer-wavelength emissions from sub-bandgap transitions, are used to characterize wafer quality and defect content on starting multicrystalline silicon wafers and neighboring wafers processed at each step through completion of finished cells. Both PL imaging techniques spatially highlight defect regions that represent dislocations and defect clusters. The relative intensities of these imaged defect regions change with processing. Band-to-band PL on wafers in the later steps of processing shows good correlation to cell quality and performance. The defect band images show regions that change relative intensity through processing, and better correlation to cell efficiency and reverse-bias breakdown is more evident at the starting wafer stage as opposed to later process steps. We show that thermal processing in the 200 degrees - 400 degrees C range causes impurities to diffuse to different defect regions, changing their relative defect band emissions.

  2. Temperature dependence of Er3+ ionoluminescence and photoluminescence in Gd2O3:Bi nanopowder

    NASA Astrophysics Data System (ADS)

    Boruc, Zuzanna; Gawlik, Grzegorz; Fetliński, Bartosz; Kaczkan, Marcin; Malinowski, Michał

    2014-06-01

    Ionoluminescence (IL) and photoluminescence (PL) of trivalent erbium ions (Er3+) in Gd2O3 nanopowder host activated with Bi3+ ions has been studied in order to establish the link between changes in luminescent spectra and temperature of the sample material. IL measurements have been performed with H2+ 100 keV ion beam bombarding the target material for a few seconds, while PL spectra have been collected for temperatures ranging from 20 °C to 700 °C. The PL data was used as a reference in determining the temperature corresponding to IL spectra. The collected data enabled the definition of empirical formula based on the Boltzmann distribution, which allows the temperature to be determined with a maximum sensitivity of 9.7 × 10-3 °C-1. The analysis of the Er3+ energy level structure in terms of tendency of the system to stay in thermal equilibrium, explained different behaviors of the line intensities. This work led to the conclusion that temperature changes during ion excitation can be easily defined with separately collected PL spectra. The final result, which is empirical formula describing dependence of fluorescence intensity ratio on temperature, raises the idea of an application of method in temperature control, during processes like ion implantation and some nuclear applications.

  3. Visible photoluminescence of porous Si(1-x)Ge(x) obtained by stain etching

    NASA Technical Reports Server (NTRS)

    Ksendzov, A.; Fathauer, R. W.; George, T.; Pike, W. T.; Vasquez, R. P.; Taylor, A. P.

    1993-01-01

    We have investigated visible photoluminescence (PL) from thin porous Si(1-x)Ge(x) alloy layers prepared by stain etching of molecular-beam-epitaxy-grown material. Seven samples with nominal Ge fraction x varying from 0.04 to 0.41 were studied at room temperature and 80 K. Samples of bulk stain etched Si and Ge were also investigated. The composition of the porous material was determined using X-ray photoemission spectroscopy and Rutherford backscattering techniques to be considerably more Ge-rich than the starting epitaxial layers. While the luminescence intensity drops significantly with the increasing Ge fraction, we observe no significant variation in the PL wavelength at room temperature. This is clearly in contradiction to the popular model based on quantum confinement in crystalline silicon which predicts that the PL energy should follow the bandgap variation of the starting material. However, our data are consistent with small active units containing only a few Si atoms that are responsible for the light emission. Such units are present in many compounds proposed in the literature as the cause of the visible PL in porous Si.

  4. Adjustable YAG : Ce3+ photoluminescence from photonic crystal microcavity

    NASA Astrophysics Data System (ADS)

    Li, Yigang; Almeida, Rui M.

    2013-04-01

    Four different photonic bandgap (PBG) structures embedding a YAG : Ce3+ layer inside two three-period Bragg mirrors were prepared by sol-gel processing, forming Fabry-Perot microcavities whose defect peaks moved from red to green. Under irradiation of blue Ar+ laser light, the typical broad YAG : Ce3+ photoluminescence (PL) emission band was highly narrowed in these four samples, with the new position of the modified PL peaks corresponding to the resonance wavelength of each microcavity sample, while the simultaneous colour changes could be easily observed by the human eye. The adjustable range demonstrated here was wide enough to generate white light with colour temperatures from warm white (˜2700 K) to daylight white (˜5600 K), by mixing the modified PL with light from any usual blue LED excitation source. This result provides a novel technique to solve the red-deficiency problem in the white LED industry: instead of relying on the development of new phosphors, the well-known PL of YAG : Ce3+ can be conveniently adjusted by 1D PBG structures.

  5. Plasmon-gating photoluminescence in graphene/GeSi quantum dots hybrid structures

    PubMed Central

    Chen, Yulu; Wu, Qiong; Ma, Yingjie; Liu, Tao; Fan, Yongliang; Yang, Xinju; Zhong, Zhenyang; Xu, Fei; Lu, Jianping; Jiang, Zuimin

    2015-01-01

    The ability to control light-matter interaction is central to several potential applications in lasing, sensing, and communication. Graphene plasmons provide a way of strongly enhancing the interaction and realizing ultrathin optoelectronic devices. Here, we find that photoluminescence (PL) intensities of the graphene/GeSi quantum dots hybrid structures are saturated and quenched under positive and negative voltages at the excitation of 325 nm, respectively. A mechanism called plasmon-gating effect is proposed to reveal the PL dependence of the hybrid structures on the external electric field. On the contrary, the PL intensities at the excitation of 405 and 795 nm of the hybrid structures are quenched due to the charge transfer by tuning the Fermi level of graphene or the blocking of the excitons recombination by excitons separation effect. The results also provide an evidence for the charge transfer mechanism. The plasmon gating effect on the PL provides a new way to control the optical properties of graphene/QD hybrid structures. PMID:26631498

  6. Temperature-dependent photoluminescence studies of GdTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Verma, Amit; Raghavan, Santosh; Protasenko, Vladimir; Stemmer, Susanne; Jena, Debdeep

    2013-03-01

    GdTiO3 (GTO), a Mott-insulator, has acquired increased prominence in last few years since the discovery of a 2-dimensional electron gas (2DEG) at its heterojunction with the band-insulator SrTiO3. These 2DEGs have very large electron densities (~3x1014 cm-2) amounting to half electron per unit cell. To realize many possible applications of this large 2DEG, an understanding of the GTO bandstructure is needed. With this goal in mind, in this work we present photoluminescence (PL) studies of GTO thin films (10nm and 20nm) grown by molecular beam epitaxy (MBE) on (001) LSAT substrates. When pumped with a 325 nm He-Cd laser, we observe a red PL (~683 nm at 300K) from both GTO thin films at RT. Upon lowering the temperature from 300K to 80K, the PL peak blue shifts by ~0.14eV. Interestingly, the reported activation energy of the resistivity of MBE-grown GTO thin films is also ~0.14eV (Moetakef et al., J. Crystal Growth 355, 166 (2012)). We connect the observed temperature-dependent PL data with the expected electronic bandstructure and electrical resistivity, and explain the sharp transition in the peak that occurs between 120K-200K from ~636nm to ~683nm. Office of Naval Research through grant number (N00014-12-1-0976).

  7. Photoluminescence of polydiacetylene membranes on porous silicon utilized for chemical sensors

    NASA Astrophysics Data System (ADS)

    Sabatani, Eyal; Kalisky, Yehoshua; Berman, Amir; Golan, Yuval; Gutman, Nadav; Urbach, Benayahu; Sa'ar, Amir

    2008-07-01

    Langmuir-Blodgett (LB) films of the conjugated polydiacetylene (PDA) exhibit spectroscopic behavior, which is dependent on the type of the supporting substrate. While on polished silicon surfaces the photoluminescence (PL) of PDA is quenched, it is preserved on top of 2D patterned macro-porous silicon (2D-MPS). 2D-MPS, prepared by electrochemical etching of photo-lithographically pre-patterned silicon, is a 2D array of ca. 10 μm deep pores with lateral 2-4 μm repeating unit cells in orthogonal or hexagonal arrangements. LB films of PDA on such surfaces form membranes with continuous domains of the size sufficient to cover laterally many cell units. Apparently, the PL from this film results exclusively from the portion of the PDA membrane which is suspended over pore openings, while portions of the film which are attached to the silicon on top of the pores walls does not exhibit PL at all. We have used these membranes in different configurations and exposed them to different chemical and biological agents and followed the PL intensity change. This report demonstrates the effectiveness of the combined system: LB films of PDA on top of 2D-MPS as sensing probe for a variety of chemicals including, Cd ions and TNT explosives. In addition, the use of films of PDA, in which glycol-lipid were embedded, for binding and recognition of lectin protein, mimicking the cell membrane interaction with its environment, is also demonstrated.

  8. Luminescence properties and optical absorption of X ray-irradiated KBr: Ce3(+), Tb(3+) crystals.

    PubMed

    Bangaru, S; Saradha, K; Muralidharan, G

    2015-03-01

    This paper reports that KBr doubly doped with Tb(3+) and Ce(3+) were prepared by Bridgman-Stockbarger method and characterized by Optical absorption, Photoluminescence (PL), Thermoluminescence (TL), Photo stimulated emission (PSL) and TL emission, after X-ray irradiation have been observed. The optical absorption measurement indicates that F and Z3 centers are formed in the crystal during X-ray irradiation process. It was attempted to incorporate a broad band of Ce(3+) sensitizer into the narrow band emission of Tb(3+) in the KBr host without reduction of emission intensity. Co-doping of Ce(3+) ions in KBr:Tb(3+) crystal showed a broad band emission due to the d-f transition of Ce(3+) and a reduction in the intensity of emission peaks due to (5)days → (7)F6 transition of Tb(3+) when they were excited at 250 nm. These results supported that an effective energy transfer occurs from Ce(3+) to Tb(3+) in the KBr host. Co-doping Ce(3+) ions greatly intensified the excitation peak at 260 nm for the emission at 390 nm of Tb(3+) which means that more lattice defects, involved in the energy absorption and transfer to Tb(3+), are formed by the Ce(3+) co-doping. The integrated light intensity is two orders of magnitude higher as compared to the undoped samples for similar doses of irradiation and heating rate. Thermoluminescence process has been identified due to thermal mobilization of F-electrons and this causes peaks at 371 K and at 427 K, 457 K in KBr: Ce(3+), Tb(3+) crystals. The defects generated by irradiation were monitored by optical absorption and trap parameters for the TL process were calculated and presented. PMID:25585645

  9. Heterogeneous core/shell fluoride nanocrystals with enhanced upconversion photoluminescence for in vivo bioimaging

    NASA Astrophysics Data System (ADS)

    Hao, Shuwei; Yang, Liming; Qiu, Hailong; Fan, Rongwei; Yang, Chunhui; Chen, Guanying

    2015-06-01

    We report on heterogeneous core/shell CaF2:Yb3+/Ho3+@NaGdF4 nanocrystals of 17 nm with efficient upconversion (UC) photoluminescence (PL) for in vivo bioimaging. Monodisperse core/shell nanostructures were synthesized using a seed-mediated growth process involving two quite different approaches of liquid-solid-solution and thermal decomposition. They exhibit green emission with a sharp band around 540 nm when excited at ~980 nm, which is about 39 times brighter than the core CaF2:Yb3+/Ho3+ nanoparticles. PL decays at 540 nm revealed that such an enhancement arises from efficient suppression of surface-related deactivation from the core nanocrystals. In vivo bioimaging employing water-dispersed core/shell nanoparticles displayed high contrast against the background.We report on heterogeneous core/shell CaF2:Yb3+/Ho3+@NaGdF4 nanocrystals of 17 nm with efficient upconversion (UC) photoluminescence (PL) for in vivo bioimaging. Monodisperse core/shell nanostructures were synthesized using a seed-mediated growth process involving two quite different approaches of liquid-solid-solution and thermal decomposition. They exhibit green emission with a sharp band around 540 nm when excited at ~980 nm, which is about 39 times brighter than the core CaF2:Yb3+/Ho3+ nanoparticles. PL decays at 540 nm revealed that such an enhancement arises from efficient suppression of surface-related deactivation from the core nanocrystals. In vivo bioimaging employing water-dispersed core/shell nanoparticles displayed high contrast against the background. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02287h

  10. Effect of annealing on the structural and UV photoluminescence properties of Sb-doped SnO2 films deposited on Al2O3 (0001) substrates by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Feng, Xianjin; Luo, Yi; Luan, Caina

    2014-11-01

    The antimony-doped tin oxide (SnO2∶Sb) films have been deposited on the Al2O3 (0001) substrates by RF magnetron sputtering. The influence of annealing on the structural and photoluminescence (PL) properties of the SnO2∶Sb films was investigated. The prepared samples were polycrystalline films having a rutile structure of pure SnO2 and a preferred orientation along the (110) direction, with an improvement in the film crystallinity observed after annealing. An ultraviolet PL peak near 334 nm was observed at room temperature both before and after annealing. The corresponding PL mechanism was discussed in detail.

  11. Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells

    SciTech Connect

    Shao, Jun Qi, Zhen; Zhu, Liang; Chen, Xiren; Guo, Shaoling; Zhao, H.; Song, Yuxin; Zha, F.-X.; Wang, S. M.

    2015-10-28

    The effects of thermal annealing on the interfaces of InGa(N)As/GaAs single quantum wells (SQWs) are investigated by excitation-, temperature-, and magnetic field-dependent photoluminescence (PL). The annealing at 750 °C results in more significant blueshift and narrowing to the PL peak than that at 600 °C. Each of the PL spectra can be reproduced with two PL components: (i) the low-energy component (LE) keeps energetically unchanged, while the high-energy component (HE) moves up with excitation and shows at higher energy for the In{sub 0.375}Ga{sub 0.625}As/GaAs but crosses over with the LE at a medium excitation power for the In{sub 0.375}Ga{sub 0.625}N{sub 0.012}As{sub 0.988}/GaAs SQWs. The HE is broader than the corresponding LE, the annealing at 750 °C narrows the LE and HE and shrinks their energetic separation; (ii) the PL components are excitonic, and the InGaNAs shows slightly enhanced excitonic effects relative to the InGaAs SQW; (iii) no typical S-shape evolution of PL energy with temperature is detectable, and similar blueshift and narrowing are identified for the same annealing. The phenomena are mainly from the interfacial processes. Annealing improves the intralayer quality, enhances the interfacial In-Ga interdiffusion, and reduces the interfacial fluctuation. The interfacial interdiffusion does not change obviously by the small N content and hence similar PL-component narrowing and blueshift are observed for the SQWs after a nominally identical annealing. Comparison with previous studies is made and the PL measurements under different conditions are shown to be effective for probing the interfacial evolution in QWs.

  12. Photoluminescence of Conjugated Star Polymers

    NASA Astrophysics Data System (ADS)

    Ferguson, J. B.; Prigodin, N. V.; Epstein, A. J.; Wang, F.

    2000-10-01

    Higher dimensionality "star" polymers provide new properties beyond those found in their linear analogs. They have been used to improving electronic properties for nonlinear optics through exciton transfer and molecular antenna structures for example (M. Kawa, J. M. J. Frechet, Chem. Mater. 10, 286 (1998).). We report on photoluminescence properties of star polymers with a hyperbranched core (both hyperbranched phenlyene and hyperbranched triphenylamine) and polyhexylthiophene arms. The arm is a conjugated oligomer of polythiophene that has been investigated extensively for metallic like conductivity when doped as well as utilized in field effect transistors in its undoped form (A. Tsumara, H. Koezuka, T. Ando, Appl. Phys. Lett. 49, 1210 (1986).). The cores are respectively, a nonconjugated polymer in the case of hyperbranched phenlyene and a conjugated polymer in the case of hyperbranched triphenylamine. The photoluminesce spectrum (λ_max at 575 nm) is identical for both star polymers with the two electronically different hyperbranched cores and for linear polythiophene alone. We conclude the wave functions of the core and arms do not strongly interact to form states different from their individual states and excitons formed on the hyperbranched cores migrate to the lower bandgap polythiophene before recombining.

  13. Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix

    SciTech Connect

    Volodin, V. A. Gambaryan, M. P.; Cherkov, A. G.; Vdovin, V. I.; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2015-12-15

    We investigate the structural and optical properties of GeO/SiO{sub 2} multilayers obtained by evaporation of GeO{sub 2} and SiO{sub 2} powders under ultrahigh vacuum conditions on Si(001) substrates. Both Raman and infrared absorption spectroscopy measurements indicate the formation of GeSi nanocrystals after postgrowth annealing at 800°C. High-resolution transmission electron microscopy characterizations show that the average size of the nanocrystals is about 5 nm. For samples containing GeSi nanocrystals, photoluminescence is observed at 14 K in the spectral range 1500–1600 nm. The temperature dependence of the photoluminescence is studied.

  14. Influence of Passivating SiO x Films on Porous Silicon Photoluminescence

    NASA Astrophysics Data System (ADS)

    Olenych, I. B.; Monastyrskii, L. S.; Koman, B. P.; Luchechko, A. P.

    2016-03-01

    The possibility of passivating the surface of photoluminescent porous silicon by thin SiO x films is studied. The influence of the passivating fi lm on the porous silicon photoluminescence spectra is investigated using luminescence, optical, and IR spectroscopy. It is shown that most of the IR absorption bands of porous silicon structures correspond to molecular complexes containing hydrogen and oxygen. It is demonstrated that the SiO x films are transparent for the exciting light and for the light generated by the porous silicon and can be used to minimize degradation processes and to protect the porous layer from the environment.

  15. Photoluminescence enhancement in CdS quantum dots by thermal annealing

    PubMed Central

    2012-01-01

    The photoluminescence behavior of CdS quantum dots in initial growth stage was studied in connection with an annealing process. Compared to the as-synthesized CdS quantum dots (quantum efficiency ≅ 1%), the heat-treated sample showed enhanced luminescence properties (quantum efficiency ≅ 29%) with a narrow band-edge emission. The simple annealing process diminished the accumulated defect states within the nanoparticles and thereby reduced the nonradiative recombination, which was confirmed by diffraction, absorption, and time-resolved photoluminescence. Consequently, the highly luminescent and defect-free nanoparticles were obtained by a facile and straightforward process. PMID:22931230

  16. Giant photoluminescence enhancement in tungsten-diselenide-gold plasmonic hybrid structures.

    PubMed

    Wang, Zhuo; Dong, Zhaogang; Gu, Yinghong; Chang, Yung-Huang; Zhang, Lei; Li, Lain-Jong; Zhao, Weijie; Eda, Goki; Zhang, Wenjing; Grinblat, Gustavo; Maier, Stefan A; Yang, Joel K W; Qiu, Cheng-Wei; Wee, Andrew T S

    2016-01-01

    Impressive properties arise from the atomically thin nature of transition metal dichalcogenide two-dimensional materials. However, being atomically thin limits their optical absorption or emission. Hence, enhancing their photoluminescence by plasmonic nanostructures is critical for integrating these materials in optoelectronic and photonic devices. Typical photoluminescence enhancement from transition metal dichalcogenides is 100-fold, with recent enhancement of 1,000-fold achieved by simultaneously enhancing absorption, emission and directionality of the system. By suspending WSe2 flakes onto sub-20-nm-wide trenches in gold substrate, we report a giant photoluminescence enhancement of ∼20,000-fold. It is attributed to an enhanced absorption of the pump laser due to the lateral gap plasmons confined in the trenches and the enhanced Purcell factor by the plasmonic nanostructure. This work demonstrates the feasibility of giant photoluminescence enhancement in WSe2 with judiciously designed plasmonic nanostructures and paves a way towards the implementation of plasmon-enhanced transition metal dichalcogenide photodetectors, sensors and emitters. PMID:27150276

  17. Giant photoluminescence enhancement in tungsten-diselenide-gold plasmonic hybrid structures

    NASA Astrophysics Data System (ADS)

    Wang, Zhuo; Dong, Zhaogang; Gu, Yinghong; Chang, Yung-Huang; Zhang, Lei; Li, Lain-Jong; Zhao, Weijie; Eda, Goki; Zhang, Wenjing; Grinblat, Gustavo; Maier, Stefan A.; Yang, Joel K. W.; Qiu, Cheng-Wei; Wee, Andrew T. S.

    2016-05-01

    Impressive properties arise from the atomically thin nature of transition metal dichalcogenide two-dimensional materials. However, being atomically thin limits their optical absorption or emission. Hence, enhancing their photoluminescence by plasmonic nanostructures is critical for integrating these materials in optoelectronic and photonic devices. Typical photoluminescence enhancement from transition metal dichalcogenides is 100-fold, with recent enhancement of 1,000-fold achieved by simultaneously enhancing absorption, emission and directionality of the system. By suspending WSe2 flakes onto sub-20-nm-wide trenches in gold substrate, we report a giant photoluminescence enhancement of ~20,000-fold. It is attributed to an enhanced absorption of the pump laser due to the lateral gap plasmons confined in the trenches and the enhanced Purcell factor by the plasmonic nanostructure. This work demonstrates the feasibility of giant photoluminescence enhancement in WSe2 with judiciously designed plasmonic nanostructures and paves a way towards the implementation of plasmon-enhanced transition metal dichalcogenide photodetectors, sensors and emitters.

  18. Giant photoluminescence enhancement in tungsten-diselenide–gold plasmonic hybrid structures

    PubMed Central

    Wang, Zhuo; Dong, Zhaogang; Gu, Yinghong; Chang, Yung-Huang; Zhang, Lei; Li, Lain-Jong; Zhao, Weijie; Eda, Goki; Zhang, Wenjing; Grinblat, Gustavo; Maier, Stefan A.; Yang, Joel K. W.; Qiu, Cheng-Wei; Wee, Andrew T. S.

    2016-01-01

    Impressive properties arise from the atomically thin nature of transition metal dichalcogenide two-dimensional materials. However, being atomically thin limits their optical absorption or emission. Hence, enhancing their photoluminescence by plasmonic nanostructures is critical for integrating these materials in optoelectronic and photonic devices. Typical photoluminescence enhancement from transition metal dichalcogenides is 100-fold, with recent enhancement of 1,000-fold achieved by simultaneously enhancing absorption, emission and directionality of the system. By suspending WSe2 flakes onto sub-20-nm-wide trenches in gold substrate, we report a giant photoluminescence enhancement of ∼20,000-fold. It is attributed to an enhanced absorption of the pump laser due to the lateral gap plasmons confined in the trenches and the enhanced Purcell factor by the plasmonic nanostructure. This work demonstrates the feasibility of giant photoluminescence enhancement in WSe2 with judiciously designed plasmonic nanostructures and paves a way towards the implementation of plasmon-enhanced transition metal dichalcogenide photodetectors, sensors and emitters. PMID:27150276

  19. Structural changes and self-activated photoluminescence in reductively annealed Sr{sub 3}AlO{sub 4}F

    SciTech Connect

    Green, Robert; Avdeev, Maxim; Vogt, Thomas

    2015-08-15

    White light emission of self-activated photoluminescence (PL) in Sr{sub 3}AlO{sub 4}F under 254 nm light is only observed after annealing in a reducing atmosphere of 5%H{sub 2}/95%Ar. High-resolution neutron powder diffraction reveals that the FSr{sub 6} octahedrons and AlO{sub 4} tetrahedrons in this anti-perovskite structure are closer packed in reduced than in air-annealed samples which show no PL. Careful analysis of temperature-dependent neutron powder diffraction data establishes smaller isotropic displacement parameters for Sr(1) and O in Sr{sub 3}AlO{sub 4}F annealed in a reducing atmosphere indicating that the denser packing of the polyhedral sub-units leads to a slightly deeper potential for the Sr(1) and O atoms. Both the air- and reductively-annealed samples have identical thermal expansion within the temperature range between 3 and 350 K. The Debye temperatures were calculated using the atomic displacement parameters and show no significant differences between the air and reductively annealed samples making the Debye temperature a bad proxy for self-activated PL. - Graphical abstract: Annealing Sr{sub 3}AlO{sub 4}F under reducing conditions results in an intense self-activated photoluminescence which is correlated with a denser packing of FSr{sub 6} and AlO{sub 4} polyhedra. - Highlights: • Sr{sub 3}AlO{sub 4}F made in air does not show self-activated photoluminescence. • Only when annealing Sr{sub 3}AlO{sub 4}F in a reducing gas is photoluminescence observed. • FSr{sub 6} and AlO{sub 4} polyhedra in reduced Sr{sub 3}AlO{sub 4}F structure are packed more efficient. • Smaller displacement parameters are found for under-bonded Sr(1) and O sites.

  20. Bright photoluminescent hybrid mesostructured silica nanoparticles.

    PubMed

    Miletto, Ivana; Bottinelli, Emanuela; Caputo, Giuseppe; Coluccia, Salvatore; Gianotti, Enrica

    2012-07-28

    Bright photoluminescent mesostructured silica nanoparticles were synthesized by the incorporation of fluorescent cyanine dyes into the channels of MCM-41 mesoporous silica. Cyanine molecules were introduced into MCM-41 nanoparticles by physical adsorption and covalent grafting. Several photoluminescent nanoparticles with different organic loadings have been synthesized and characterized by X-ray powder diffraction, high resolution transmission electron microscopy and nitrogen physisorption porosimetry. A detailed photoluminescence study with the analysis of fluorescence lifetimes was carried out to elucidate the cyanine molecules distribution within the pores of MCM-41 nanoparticles and the influence of the encapsulation on the photoemission properties of the guests. The results show that highly stable photoluminescent hybrid materials with interesting potential applications as photoluminescent probes for diagnostics and imaging can be prepared by both methods. PMID:22706523

  1. Charge Injection at the Heterointerface in Perovskite CH3NH3PbI3 Solar Cells Studied by Simultaneous Microscopic Photoluminescence and Photocurrent Imaging Spectroscopy.

    PubMed

    Yamashita, Daiki; Handa, Taketo; Ihara, Toshiyuki; Tahara, Hirokazu; Shimazaki, Ai; Wakamiya, Atsushi; Kanemitsu, Yoshihiko

    2016-08-18

    Charge carrier dynamics in perovskite CH3NH3PbI3 solar cells were studied by means of microscopic photoluminescence (PL) and photocurrent (PC) imaging spectroscopy. The PL intensity, PL lifetime, and PC intensity varied spatially on the order of several tens of micrometers. Simultaneous PL and PC image measurements revealed a positive correlation between the PL intensity and PL lifetime, and a negative correlation between PL and PC intensities. These correlations were due to the competition between photocarrier injection from the CH3NH3PbI3 layer into the charge transport layer and photocarrier recombination within the CH3NH3PbI3 layer. Furthermore, we found that the decrease in the carrier injection efficiency under prolonged light illumination leads to a reduction in PC, resulting in light-induced degradation of solar cell devices. Our findings provide important insights for understanding carrier injection at the interface and light-induced degradation in perovskite solar cells. PMID:27482607

  2. Improving the Photoluminescence Properties of Perovskite CH3NH3PbBr3-xClx Films by Modulating Organic Cation and Chlorine Concentrations.

    PubMed

    Yan, Jun; Zhang, Bing; Chen, Yunlin; Zhang, Ao; Ke, Xiaohan

    2016-05-25

    The photoluminescence (PL) properties of inorganic-organic perovskites can be drastically changed by tuning the halogen composition, especially the Cl content. However, our research demonstrated that in addition to the influence of Cl concentration, the PL emission intensity of CH3NH3PbBr3 strongly depends on the content of CH3NH3Br in the coating solution. The effects of CH3NH3Br and Cl concentrations on the PL properties of CH3NH3PbBr3-xClx were investigated. We found that a strong PL emission intensity of CH3NH3PbBr3 can be obtained from solutions with a high CH3NH3Br concentration. The PL emission intensities of CH3NH3PbBr3-xClx films were enhanced by adjusting the molar ratio of PbBr to PbCl2 only in a highly concentrated CH3NH3Br environment. Moreover, it was found that an optimum CH3NH3Br/PbBr2/PbCl2 ratio in the precursor solutions can be used to obtain the strongest PL emission intensity of CH3NH3PbBr3-xClx films. Further studies revealed that both CH3NH3Br and Cl concentrations significantly influence the CH3NH3PbBr3-xClx films evolution, which affects their PL properties. PMID:27163386

  3. Observation of heavy- and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn)

    NASA Astrophysics Data System (ADS)

    Harris, Thomas R.; Yeo, Yung Kee; Ryu, Mee-Yi; Beeler, Richard T.; Kouvetakis, John

    2014-09-01

    Temperature- (T-) and laser power-dependent photoluminescence (PL) measurements have been made for the tensile-strained, undoped GeSn (0.03% Sn) film grown on Si substrate. The PL results show not only clear strain-split direct bandgap transitions to the light-hole (LH) and heavy-hole (HH) bands at energies of 0.827 and 0.851 eV at 10 K, respectively, but also clearly show both strong direct and indirect bandgap related PL emissions at almost all temperatures, which are rarely observed. This split of PL emissions can be directly observed only at low T and moderate laser power, and the two PL peaks merge into one broad PL peak at room temperature, which is mainly due to the HH PL emission rather than LH transition. The evolution of T-dependent PL results also clearly show the competitive nature between the direct and indirect bandgap related PL transitions as T changes. The PL analysis also indicates that the energy gap reduction in Γ valley could be larger, whereas the bandgap reduction in L valley could be smaller than the theory predicted. As a result, the separation energy between Γ and L valleys (˜86 meV at 300 K) is smaller than theory predicted (125 meV) for this Ge-like sample, which is mainly due to the tensile strain. This finding strongly suggests that the indirect-to-direct bandgap transition of Ge1-ySny could be achieved at much lower Sn concentration than originally anticipated if one utilizes the tensile strain properly. Thus, Ge1-ySny alloys could be attractive materials for the fabrication of direct bandgap Si-based light emitting devices.

  4. Electronic states in Cd{sub 1{minus}x}Zn{sub x}Te/CdTe strained layer coupled double quantum wells and their photoluminescence

    SciTech Connect

    Li, T.; Lozykowski, H.J.; Reno, J.

    1994-12-31

    Experimental and theoretical investigation of electronic states in a strained-layer CdTe/CdZnTe coupled double quantum well structure are presented. The optical properties of this lattice-mismatched heterostructure were characterized with photoluminescence (PL), PL excitation and polarization spectroscopies. Influence of electrical field on exciton states in the strained-layer CdTe/CdZnTe coupled double quantum well structure is experimentally studied. The confined electronic states were calculated in the framework of the envelope function approach, taking into account the strain effect induced by the lattice-mismatch. Experimental results are compared with the calculated transition energies.

  5. Significant enhancement of optical absorption through nano-structuring of copper based oxide semiconductors: possible future materials for solar energy applications.

    PubMed

    Bhaumik, Anagh; Shearin, Austin M; Patel, Rishi; Ghosh, Kartik

    2014-06-14

    The optical absorption coefficient is a crucial parameter in determining solar cell efficiency under operational conditions. It is well known that inorganic nanocrystals are a benchmark model for solar cell nanotechnology, given that the tunability of optical properties and stabilization of specific phases are uniquely possible at the nanoscale. A hydrothermal method was employed to fabricate nanostructured copper oxides where the shape, size and phase were tailored by altering the growth parameters, namely the base media used, the reaction temperature, and the reaction time. The nano crystalline structures, phases, morphology, molecular vibrational modes, and optical properties were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence (PL), and UV-vis spectroscopy. A significantly large optical absorption coefficient, of the order of twice that of Si in the visible range, was observed in a particular phase mixture of nanostructured copper oxides. An optical absorption coefficient of 7.05 10(+5) cm(-1) at 525 nm was observed in a particular nanostructured phase mixture of copper oxides which is appreciably larger than commercially pure CuO (1.19 10(+5) cm(-1)) and Si (1.72 10(+5) cm(-1)). A possible mechanism of formation of phase mixtures and morphology of copper oxides has also been discussed, which opens up a roadmap in synthesis of similar morphology nanostructures for efficient solar cells. PMID:24777390

  6. Highly Efficient Nondoped Green Organic Light-Emitting Diodes with Combination of High Photoluminescence and High Exciton Utilization.

    PubMed

    Wang, Chu; Li, Xianglong; Pan, Yuyu; Zhang, Shitong; Yao, Liang; Bai, Qing; Li, Weijun; Lu, Ping; Yang, Bing; Su, Shijian; Ma, Yuguang

    2016-02-10

    Photoluminescence (PL) efficiency and exciton utilization efficiency are two key parameters to harvest high-efficiency electroluminescence (EL) in organic light-emitting diodes (OLEDs). But it is not easy to simultaneously combine these two characteristics (high PL efficiency and high exciton utilization) into a fluorescent material. In this work, an efficient combination was achieved through two concepts of hybridized local and charge-transfer (CT) state (HLCT) and "hot exciton", in which the former is responsible for high PL efficiency while the latter contributes to high exciton utilization. On the basis of a tiny chemical modification in TPA-BZP, a green-light donor-acceptor molecule, we designed and synthesized CzP-BZP with this efficeient combination of high PL efficiency of η(PL) = 75% in the solid state and maximal exciton utilization efficiency up to 48% (especially, the internal quantum efficiency of η(IQE) = 35% substantially exceed 25% of spin statistics limit) in OLED. The nondoped OLED of CzP-BZP exhibited an excellent performance: a green emission with a CIE coordinate of (0.34, 0.60), a maximum current efficiency of 23.99 cd A(-1), and a maximum external quantum efficiency (EQE, η(EQE)) of 6.95%. This combined HLCT state and "hot exciton" strategy should be a practical way to design next-generation, low-cost, high-efficiency fluorescent OLED materials. PMID:26785427

  7. Near-infrared photoluminescence and thermally stimulated current in Cu3Ga5Se9 layered crystals: A comparative study

    NASA Astrophysics Data System (ADS)

    Gasanly, N. M.

    2016-07-01

    Near-infrared photoluminescence (PL) and thermally stimulated current (TSC) spectra of Cu3Ga5Se9 layered crystals grown by Bridgman method have been studied in the photon energy region of 1.35-1.46 eV and the temperature range of 15-115 K (PL) and 10-170 K (TSC). An infrared PL band centered at 1.42 eV was revealed at T = 15 K. Radiative transitions from shallow donor level placed at 20 meV to moderately deep acceptor level at 310 meV were suggested to be the reason of the observed PL band. TSC curve of Cu3Ga5Se9 crystal exhibited one broad peak at nearly 88 K. The thermal activation energy of traps was found to be 22 meV. An energy level diagram demonstrating the transitions in the crystal band gap was plotted taking account of results of PL and TSC experiments conducted below room temperature.

  8. Charge generation in PbS quantum dot solar cells characterized by temperature-dependent steady-state photoluminescence.

    PubMed

    Gao, Jianbo; Zhang, Jianbing; van de Lagemaat, Jao; Johnson, Justin C; Beard, Matthew C

    2014-12-23

    Charge-carrier generation and transport within PbS quantum dot (QD) solar cells is investigated by measuring the temperature-dependent steady-state photoluminescence (PL) concurrently during in situ current-voltage characterization. We first compare the temperature-dependent PL quenching for PbS QD films where the PbS QDs retain their original oleate ligand to that of PbS QDs treated with 1,2-ethanedithiol (EDT), producing a conductive QD layer, either on top of glass or on a ZnO nanocrystal film. We then measure and analyze the temperature-dependent PL in a completed QD-PV architecture with the structure Al/MoO3/EDT-PbS/ZnO/ITO/glass, collecting the PL and the current simultaneously. We find that at low temperatures excitons diffuse to the ZnO interface, where PL is quenched via interfacial charge transfer. At high temperatures, excitons dissociate in the bulk of the PbS QD film via phonon-assisted tunneling to nearby QDs, and that dissociation is in competition with the intrinsic radiative and nonradiative rates of the individual QDs. The activation energy for exciton dissociation in the QD-PV devices is found to be ∼40 meV, which is considerably lower than that of the electrodeless samples, and suggests unique interactions between injected and photogenerated carriers in devices. PMID:25485555

  9. Photoluminescence study on heavily donor and acceptor impurity doped GaAs layers grown by molecular-beam epitaxy

    SciTech Connect

    Islam, A. Z. M. Touhidul; Jung, D. W.; Noh, J. P.; Otsuka, N.

    2009-05-01

    Gallium arsenide layers doped with high concentrations of Be and Si by molecular-beam epitaxy are studied by photoluminescence (PL) spectroscopy. PL peaks from doped layers are observed at energies significantly lower than the band-gap of GaAs. The growth and doping conditions suggest that the origin of these peaks is different from that of low energy PL peaks, which were observed in earlier studies and attributed to impurity-vacancy complexes. The dependence of the peak energy on the temperature and the annealing is found to differ from that of the peaks attributed to impurity-vacancy complexes. On the basis of these observations, it is suggested that the low energy peaks are attributed to short range ordered arrangements of impurity ions. This possibility is examined by calculations of the PL spectra with models of pairs of acceptor and donor delta-doped layers and PL experiments of a superlattice of pairs of Be and Si delta-doped layers.

  10. Control of Photoluminescence of Carbon Nanodots via Surface Functionalization using Para-substituted Anilines

    PubMed Central

    Kwon, Woosung; Do, Sungan; Kim, Ji-Hee; Seok Jeong, Mun; Rhee, Shi-Woo

    2015-01-01

    Carbon nanodots (C-dots) are a kind of fluorescent carbon nanomaterials, composed of polyaromatic carbon domains surrounded by amorphous carbon frames, and have attracted a great deal of attention because of their interesting properties. There are still, however, challenges ahead such as blue-biased photoluminescence, spectral broadness, undefined energy gaps and etc. In this report, we chemically modify the surface of C-dots with a series of para-substituted anilines to control their photoluminescence. Our surface functionalization endows our C-dots with new energy levels, exhibiting long-wavelength (up to 650 nm) photoluminescence of very narrow spectral widths. The roles of para-substituted anilines and their substituents in developing such energy levels are thoroughly studied by using transient absorption spectroscopy. We finally demonstrate light-emitting devices exploiting our C-dots as a phosphor, converting UV light to a variety of colors with internal quantum yields of ca. 20%. PMID:26218869

  11. Radiative and non-radiative recombinations in tensile strained Ge microstrips: Photoluminescence experiments and modeling

    SciTech Connect

    Virgilio, M.; Schroeder, T.; Yamamoto, Y.; Capellini, G.

    2015-12-21

    Tensile germanium microstrips are candidate as gain material in Si-based light emitting devices due to the beneficial effect of the strain field on the radiative recombination rate. In this work, we thoroughly investigate their radiative recombination spectra by means of micro-photoluminescence experiments at different temperatures and excitation powers carried out on samples featuring different tensile strain values. For sake of comparison, bulk Ge(001) photoluminescence is also discussed. The experimental findings are interpreted in light of a numerical modeling based on a multi-valley effective mass approach, taking in to account the depth dependence of the photo-induced carrier density and of the self-absorption effect. The theoretical modeling allowed us to quantitatively describe the observed increase of the photoluminescence intensity for increasing values of strain, excitation power, and temperature. The temperature dependence of the non-radiative recombination time in this material has been inferred thanks to the model calibration procedure.

  12. Green synthesis of magnesium ion incorporated nanocrystalline hydroxyapatite and their mechanical, dielectric and photoluminescence properties

    SciTech Connect

    Arul, K. Thanigai; Kolanthai, Elayaraja; Manikandan, E.; Bhalerao, G.M.; Chandra, V. Sarath; Ramya, J. Ramana; Mudali, U. Kamachi; Nair, K.G.M.; Kalkura, S.Narayana

    2015-07-15

    Highlights: • Rapid technique to synthesize nanorods of magnesium ion incorporated hydroxyapatite. • Enhanced electrical and mechanical properties. • Improved photoluminescence and wettability on magnesium incorporation. • Increased in vitro bioactivity. - Abstract: Nanocrystalline hydroxyapatite (HAp-Ca{sub 10}(PO{sub 4}){sub 6}(OH){sub 2,} 35 nm) and magnesium (Mg{sup 2+}) ion incorporated HAp were synthesized by microwave technique. XRD (X-ray diffraction), FTIR (Fourier transform infrared spectroscopy), FE-HRTEM (Field emission high resolution transmission electron microscopy), DLS (dynamic light scattering), EDXRF (energy dispersive X-ray fluorescence spectrometry), microhardness, permittivity and alternating current (ac) conductivity, besides the PL (photoluminescence), wettability and in vitro bioactivity of the samples were analysed. EDXRF revealed the Mg{sup 2+} ion incorporation in HAp. The Mg{sup 2+} ion incorporation did not alter the phase but drastically reduced the crystallite size and particle size respectively by 48% and 32%. There was enhanced microhardness (24%) at low level (<13%) and decreased zeta potential of Mg{sup 2+} ion incorporation. The permittivity, ac conductivity, PL, wettability and in vitro bioactivity were enhanced on Mg{sup 2+} ion incorporation. These properties enable them to be a promising candidate for wound healing, bone replacement applications and also as a biosensor.

  13. Effects of thermal annealing on photoluminescence of Si+/C+ implanted SiO2 films

    NASA Astrophysics Data System (ADS)

    Chen, Yin-Yu; Chao, Der-Sheng; Tsai, Hsu-Sheng; Liang, Jenq-Horng

    2016-04-01

    The mechanisms of photoluminescence (PL) originating from Si+/C+ implanted SiO2 are still unclear and need to be clarified. Thus, the purpose of this study is to thoroughly investigate the effects of ion implantation and post-annealing temperature on microstructures and PL characteristics of the Si+/C+ implanted SiO2 films. A comparative analysis was also conducted to clarify the different optical properties between the Si+ and Si+/C+ implanted SiO2 films. In this study, thermally-grown SiO2 films on Si substrates were used as the matrix materials. The Si+ ions and C+ ions were separately implanted into the SiO2 films at room temperature. After ion implantation, the post-annealing treatments were carried out using the furnace annealing (FA) method at various temperatures (600-1100 °C) for 1 h in a N2 ambient. The PL characteristics of the implanted SiO2 films were analyzed using a fluorescence spectrophotometer. The results revealed that the distinct PL peaks were observed at approximately 310, 450 and 650 nm in the Si+-implanted SiO2 films, which can be attributed to the defects, the so-called oxygen deficiency centers (ODCs) and non-bridging oxygen hole centers (NBOHCs), in the materials. In contrast to the Si+ ion implantation, the SiO2 films which were sequentially implanted with Si+ and C+ ions and annealed at 1100 °C can emit white light corresponding to the PL peaks located at around 420, 520 and 720 nm, those can be assigned to the Si-C bonding, C-C graphite-like structure (sp2), and Si nanocrystals, respectively. Moreover, a correlation between the optical properties, microstructures, and bonding configurations of the Si+/C+ implanted SiO2 films was also established in this study.

  14. Achieving highly-enhanced UV photoluminescence and its origin in ZnO nanocrystalline films

    NASA Astrophysics Data System (ADS)

    Thapa, Dinesh; Huso, Jesse; Morrison, John L.; Corolewski, Caleb D.; McCluskey, Matthew D.; Bergman, Leah

    2016-08-01

    ZnO is an efficient luminescent material in the UV-range ∼3.4 eV with a wide range of applications in optical technologies. Sputtering is a cost-effective and relatively straightforward growth technique for ZnO films; however, most as-grown films are observed to contain intrinsic defects which can significantly diminish the desirable UV-emission. In this research the defect dynamics and optical properties of ZnO sputtered films were studied via post-growth annealing in Ar or O2 ambient, with X-ray diffraction (XRD), imaging, transmission and Urbach analysis, Raman scattering, and photoluminescence (PL). The imaging, XRD, Raman and Urbach analyses indicate significant improvement in crystal morphology and band-edge characteristics upon annealing, which is nearly independent of the annealing environment. The native defects specific to the as-grown films, which were analyzed via PL, are assigned to Zni related centers that luminesce at 2.8 eV. Their presence is attributed to the nature of the sputtering growth technique, which supports Zn-rich growth conditions. After annealing, in either environment the 2.8 eV center diminished accompanied by morphology improvement, and the desirable UV-PL significantly increased. The O2 ambient was found to introduce nominal Oi centers while the Ar ambient was found to be the ideal environment for the enhancement of the UV-light emission: an enhancement of ∼40 times was achieved. The increase in the UV-PL is attributed to the reduction of Zni-related defects, the presence of which in ZnO provides a competing route to the UV emission. Also, the effect of the annealing was to decrease the compressive stress in the films. Finally, the dominant UV-PL at the cold temperature regime is attributed to luminescent centers not associated with the usual excitons of ZnO, but rather to structural defects.

  15. Conjugated polymer network films of poly(p-phenylene vinylene) with hole-transporting carbazole pendants: dual photoluminescence and electrochromic behavior.

    PubMed

    Ponnapati, Ramakrishna; Felipe, Mary Jane; Muthalagu, Vetrichelvan; Puno, Katherine; Wolff, Birte; Advincula, Rigoberto

    2012-03-01

    A series of poly(p-phenylene vinylene) (PPV) copolymers functionalized with hole-transport and electrochemically active carbazole units as pendant moieties is reported. These polymers exhibit photoluminescence properties by virtue of the PPV analogous backbone. They were also designed as precursor polymer bearing the electroactive carbazole group to form conjugated polymer network (CPN) films by electrodeposition. The electrochemical polymerization of the pendant units eventually lead to a dual property electro-optically active thin film - photoluminescence (PL) behavior that can be attenuated with CPN formation, and a reversible doping and dedoping processes at controlled potentials that lead to an electrochromic behavior. This reveals the ability to incorporate complementary optical and electro-optical properties within the same film using the CPN approach. It should be possible to design and synthesize other PPV π-conjugated polymers with efficient pendant hole-transport groups exhibiting tunable PL and electrochromism with cross-linking. PMID:22329863

  16. Pressure dependence of the photoluminescence from γ-In2Se3 thin films prepared using MOCVD with a single-source precursor

    NASA Astrophysics Data System (ADS)

    Choi, In Hwan; Park, Hyeon Jeong

    2014-05-01

    Single γ-phase In2Se3 films were prepared by using metal-organic chemical-vapor deposition(MOCVD) with a single-source precursor [(Me)2In( μ-SeMe)]2. The basic physical properties of the grown films were examined by using X-ray diffraction, Raman spectroscopy, and photoluminescence spectroscopy at room temperature. The pressure dependence of the photoluminescence spectrum of the In2Se3 films was measured at room temperature. At 1 atm, 2 PL peaks were observed, one at 1.88 eV due to a bound exciton transition and the other at 1.50 eV due to a bound-to-free transition. While the pressure coefficients, at pressures below 1.4 GPa were nearly zero, the pressure coefficients of both PL peaks at pressures above 1.4 GPa were -25 meV/GPa.

  17. Synthesis, photoluminescence and magnetic properties of barium vanadate nanoflowers

    SciTech Connect

    Xu, Jing; Hu, Chenguo; Xi, Yi; Peng, Chen; Wan, Buyong; He, Xiaoshan

    2011-06-15

    Graphical abstract: The flower-shaped barium vanadate was obtained for the first time. The photoluminescence and magnetic properties of the barium vanadate nanoflowers were investigated at room temperature. Research highlights: {yields} In the paper, the flower-shaped barium vanadate were obtained for the first time. The CHM method used here is new and simple for preparation of barium vanadate. {yields} The photoluminescence and magnetic properties of the barium vanadate nanoflowers were investigated at room temperature. The strong bluish-green emission was observed. {yields} The ferromagnetic behavior of the barium vanadate nanoflowers was found with saturation magnetization of about 83.50 x 10{sup -3} emu/g, coercivity of 18.89 Oe and remnant magnetization of 4.63 x 10{sup -3} emu/g. {yields} The mechanisms of PL and magnetic property of barium vanadate nanoflowers have been discussed. -- Abstract: The flower-shaped barium vanadate has been obtained by the composite hydroxide mediated (CHM) method from V{sub 2}O{sub 5} and BaCl{sub 2} at 200 {sup o}C for 13 h. XRD and XPS spectrum of the as-synthesized sample indicate it is hexagonal Ba{sub 3}V{sub 2}O{sub 8} with small amount of Ba{sub 3}VO{sub 4.8} coexistence. Scan electron microscope and transmission electron microscope display that the flower-shaped crystals are composed of nanosheets with thickness of {approx}20 nm. The UV-visible spectrum shows that the barium vanadate sample has two optical gaps (3.85 eV and 3.12 eV). Photoluminescence spectrum of the barium vanadate flowers exhibits a visible light emission centered at 492 and 525 nm which might be attributed to VO{sub 4} tetrahedron with T{sub d} symmetry in Ba{sub 3}V{sub 2}O{sub 8}. The ferromagnetic behavior of the barium vanadate nanoflowers has been found with saturation magnetization of about 83.50 x 10{sup -3} emu/g, coercivity of 18.89 Oe and remnant magnetization of 4.63 x 10{sup -3} emu/g, which is mainly due to the presence of a non

  18. Applicability of Langmuir equation to oxygen pressure dependent photoluminescence from β-Ga2O3 nanostructures

    NASA Astrophysics Data System (ADS)

    Jangir, R.; Ganguli, Tapas; Porwal, S.; Tiwari, Pragya; Rai, S. K.; Bhaumik, Indranil; Kukreja, L. M.; Gupta, P. K.; Deb, S. K.

    2013-08-01

    β-Ga2O3 nanostructures were synthesized via vapor transport method on gold coated Silicon substrate in N2 ambient. The as synthesized products were investigated by grazing incident X-ray diffraction, scanning electron microscopy and photoluminescence (PL) spectroscopy. It is shown that the intensity of photoluminescence from the ensemble of β-Ga2O3 nanostructures in oxygen gas ambience is correlated with the oxygen pressure through the Langmuir equation. This correlation is found to be reversible and reproducible. This phenomenon, which was not observed in the bulk β-Ga2O3 single crystal, is attributed to the oxygen related shallow trap surface states of the nanostructures with energies at about 4.2 eV above the valance band. Based on the changes in the PL intensity with the oxygen pressures, a possible mechanism for the observed photoluminescence is suggested. The present results provide a route for room-temperature response of oxygen in the gallium oxide nanostructures.

  19. Tilted dipole model for bias-dependent photoluminescence pattern

    NASA Astrophysics Data System (ADS)

    Fujieda, Ichiro; Suzuki, Daisuke; Masuda, Taishi

    2014-12-01

    In a guest-host system containing elongated dyes and a nematic liquid crystal, both molecules are aligned to each other. An external bias tilts these molecules and the radiation pattern of the system is altered. A model is proposed to describe this bias-dependent photoluminescence patterns. It divides the liquid crystal/dye layer into sub-layers that contain electric dipoles with specific tilt angles. Each sub-layer emits linearly polarized light. Its radiation pattern is toroidal and is determined by the tilt angle. Its intensity is assumed to be proportional to the power of excitation light absorbed by the sub-layer. This is calculated by the Lambert-Beer's Law. The absorption coefficient is assumed to be proportional to the cross-section of the tilted dipole moment, in analogy to the ellipsoid of refractive index, to evaluate the cross-section for each polarized component of the excitation light. Contributions from all the sub-layers are added to give a final expression for the radiation pattern. Self-absorption is neglected. The model is simplified by reducing the number of sub-layers. Analytical expressions are derived for a simple case that consists of a single layer with tilted dipoles sandwiched by two layers with horizontally-aligned dipoles. All the parameters except for the tilt angle can be determined by measuring transmittance of the excitation light. The model roughly reproduces the bias-dependent photoluminescence patterns of a cell containing 0.5 wt. % coumarin 6. It breaks down at large emission angles. Measured spectral changes suggest that the discrepancy is due to self-absorption and re-emission.

  20. Tilted dipole model for bias-dependent photoluminescence pattern

    SciTech Connect

    Fujieda, Ichiro Suzuki, Daisuke; Masuda, Taishi

    2014-12-14

    In a guest-host system containing elongated dyes and a nematic liquid crystal, both molecules are aligned to each other. An external bias tilts these molecules and the radiation pattern of the system is altered. A model is proposed to describe this bias-dependent photoluminescence patterns. It divides the liquid crystal/dye layer into sub-layers that contain electric dipoles with specific tilt angles. Each sub-layer emits linearly polarized light. Its radiation pattern is toroidal and is determined by the tilt angle. Its intensity is assumed to be proportional to the power of excitation light absorbed by the sub-layer. This is calculated by the Lambert-Beer's Law. The absorption coefficient is assumed to be proportional to the cross-section of the tilted dipole moment, in analogy to the ellipsoid of refractive index, to evaluate the cross-section for each polarized component of the excitation light. Contributions from all the sub-layers are added to give a final expression for the radiation pattern. Self-absorption is neglected. The model is simplified by reducing the number of sub-layers. Analytical expressions are derived for a simple case that consists of a single layer with tilted dipoles sandwiched by two layers with horizontally-aligned dipoles. All the parameters except for the tilt angle can be determined by measuring transmittance of the excitation light. The model roughly reproduces the bias-dependent photoluminescence patterns of a cell containing 0.5 wt. % coumarin 6. It breaks down at large emission angles. Measured spectral changes suggest that the discrepancy is due to self-absorption and re-emission.